Composition for dissolving and/or inhibiting deposition of scale on a surface of a system

A composition for dissolving and/or inhibiting deposition of scale on a surface of a system comprises an acidic component, a wetting agent, and a corrosion inhibitor. The composition may further comprise water. The acidic component comprises an alkanesulfonic acid, e.g. methanesulfonic acid (MSA). The wetting agent comprises a surfactant. The corrosion inhibitor comprises an amphoteric surfactant. The alkanesulfonic acid is present in an amount of at least about 50 weight percent (wt %), the surfactant is present in an amount of from about 0.1 to about 30 wt %, and the amphoteric surfactant is present in an amount of from about 0.025 to about 20 wt %, each based on 100 wt % of the alkanesulfonic acid, the surfactant, and the amphoteric surfactant combined. A method of dissolving and/or inhibiting deposition of scale on the surface of the system comprises the step of contacting the surface of the system with the composition.

WATER-SOLUBLE FLUX AND COPPER MATERIAL PICKLING METHOD

The present invention belongs to the technical field of solder fluxes, and in particular relates to a water-soluble flux and a copper material pickling method. The water-soluble flux provided by the present invention includes an organic acid, an alcohol ether solvent, and deionized water. The organic acid is used as an active component of the present invention, and under the action of the alcohol ether solvent, oxides and impurities on the surface of a part to be welded can be sufficiently removed, and adhering residue of an acidic substance on the surface of the part to be welded can be reduced. In the process of tin plating of the part to be welded treated by the water-soluble flux provided by the present invention, the splash of tin liquid can be effectively inhibited, and the utilization rate of tin is improved. 1. A water-soluble flux , comprising the following components: an organic acid , an alcohol ether solvent , and deionized water.2. The water-soluble flux according to claim 1 , comprising the following components by mass parts claim 1 , 10-20 parts of the organic acid claim 1 , 1-10 parts of the alcohol ether solvent and 70-90 parts of the deionized water.3. The water-soluble flux according to claim 1 , wherein the organic acid comprises formic acid and/or acetic acid.4. The water-soluble flux according to claim 1 , wherein the alcohol ether solvent comprises one or more of ethylene glycol monobutyl ether claim 1 , dipropylene glycol methyl ether claim 1 , diethylene glycol monoethyl ether claim 1 , and tripropylene glycol monomethyl ether.5. The water-soluble flux according to claim 4 , wherein the alcohol ether solvent is ethylene glycol monobutyl ether and tripropylene glycol monomethyl ether.6. The water-soluble flux according to claim 5 , wherein the ratio of the mass of the ethylene glycol monobutyl ether to the mass of the tripropylene glycol monomethyl ether is (3-5):1.7. A copper material pickling method claim 5 , comprising:{'claim-ref': {'@ ...

COMPOSITIONS AND METHODS THAT PROMOTE CHARGE COMPLEXING COPPER PROTECTION DURING LOW PKA DRIVEN POLYMER STRIPPING

The present invention is a charge complexing chemical composition that protects metal during polymer removal. The polymer coatings include crosslinked systems by chemical-amplification and photoacid generated (PAG) means as in epoxies. The system includes a solvent, a charge complexing additive, and an acid that creates a protective complex for sensitive metals during the dissolving and rinsing practice needed for processing microelectronic parts. The composition can be utilized with a method for removing partial and fully cured crosslinked coatings that originate from chemical amplification or PAG-epoxy photoimageable coatings. 1. A composition that creates a charge complex with metals as a means of protection during a polymer coating removal process , comprising:a solvent;an organic acid having a pKa<3; andan additive exhibiting charge complexing character.2. The composition according to claim 1 , wherein said solvent is tetrahydrofurfuryl alcohol (THFA).3. The composition according to claim 2 , wherein THFA is present at concentrations of >40% w/w.4. The composition according to claim 1 , wherein the organic acid of pKa<3 is selected from the group consisting of carboxylic acid and sulfonic acid.5. The composition according to claim 4 , wherein the carboxylic acid is selected from the group consisting of oxalic acid and maleic acid.6. The composition according to claim 5 , wherein the carboxylic acid is maleic acid and is present at concentrations of 0.25-1 molar.7. The composition according to claim 4 , wherein the sulfonic acid is selected from the group consisting of methanesulfonic acid claim 4 , para-toluenesulfonic acid claim 4 , and dodecylbenzenesulfonic acid.8. The composition according to claim 7 , wherein the sulfonic acid is dodecylbenzenesulfonic acid and is present at concentrations of 0.25-1 molar.9. The composition according to claim 1 , wherein said additive exhibiting charge complexing character is selected from the group consisting of ...

METHOD FOR MANUFACTURING CIRCUIT BOARD

A method for manufacturing the circuit board comprises following steps of providing an insulating substrate, and defining at least one through-hole on the insulating substrate to extending through two opposite surfaces of the insulating substrate; forming a silver layer on each of the two opposite surfaces, and forming a silver conductive structure in each through-hole connecting the silver layers; forming a copper wiring layer on the silver layers to cover each silver conductive structure and a portion region of the silver layers; and etching the silver layers to form a silver wiring layer corresponding to the copper wiring layer, wherein a first etching liquid, which does not etch the copper wiring layer, is used for etching the silver layers. 1. A method for manufacturing the circuit board comprising:providing an insulating substrate, and defining at least one through-hole on the insulating substrate to extend through two opposite surfaces of the insulating substrate;forming a silver layer on each of the two opposite surfaces, and forming a silver conductive structure in each of the at least one through-hole connecting the silver layers;forming a copper wiring layer on the silver layers to cover each silver conductive structure and a portion region of the silver layers; andetching the silver layers to form a silver wiring layer corresponding to the copper wiring layer, wherein a first etching liquid, which does not etch the copper wiring layer, is used for etching the silver layers.2. The method of the claim 1 , wherein a width of each line of the silver wiring layer is less than a width of a corresponding line of the copper wiring layer claim 1 , and a spacing between two lines of the silver wiring layer is greater than a spacing between two corresponding lines of the copper wiring layer.3. The method of the claim 1 , wherein the silver layers and the at least one silver conductive structure are formed by the following steps:coating a silver paste with nano ...

Method for surface treatment of metals using bacteria

Provided is a method for surface-treatment of a metal using bacteria, and more particularly, a method for surface-treatment of a metal using bacteria including immersing the metal having a surface layer on which a deformed layer is formed in a culture fluid cultured with metal-oxidizing bacteria, such that the metal-oxidizing bacteria selectively oxidize and leach-remove the deformed layer of the metal to perform micro-machining, thereby minimizing a damage to a metal basic material to effectively remove the deformed layer of the metal, and further including partly coating a surface of the metal to produce fine patterns of which sizes and shapes are various.

Film-forming composition, method for producing surface-treated metal member, and method for producing metal-resin composite

The coating film-forming composition includes an aromatic compound having an amino group and an aromatic ring in one molecule, and thio compound (sulfur oxoacids having a pKa of −1.9 or less and salts thereof are excluded). pH of the coating film-forming composition is 4 to 10. The thio compound is preferably one that ionized to form anions in a solution, and thiosulfate and thiocyanate are especially preferable. By bringing the coating film-forming composition into contact with the surface of a metal member, a coating film is formed on the surface of the metal member, so that a surface-treated metal member can be obtained.

A METHOD FOR INCREASING ADHESION STRENGTH BETWEEN A SURFACE OF COPPER OR COPPER ALLOY AND AN ORGANIC LAYER

The present invention relates to a method for increasing adhesion strength between a surface of copper or copper alloy and an organic layer, the method comprising in this order the steps: 1. A method for increasing adhesion strength between a surface of copper or copper alloy and an organic layer , the method comprising in this order the steps:(i) providing a non-conductive substrate comprising on at least one side said surface, said surface having a total surface area of copper or copper alloy, (ii-a) one or more than one amino azole,', '(ii-b) one or more than one organic acid and/or salts thereof,', '(ii-c) one or more than one peroxide in a total amount of 0.4 wt-% or less, based on the total weight of the protector solution, and', '(ii-d) one or more than one inorganic acid in a total amount of 0 to 0.01 wt-%, based on the total weight of the protector solution,, '(ii) contacting said substrate comprising said surface with an acidic aqueous non-etching protector solution comprising'}wherein during step (ii) the total surface area of said surface is not increased upon contacting with the protector solution.2. The method of claim 1 , wherein in step (i) the surface of copper or copper alloy comprises a nano-roughened surface layer obtained byoxidizing Cu-(0) into Cu-(I) and Cu-(II), respectively, and subsequentlyreducing at least partly this Cu-(I) and Cu-(ll), respectively, into Cu-(0).3. The method of claim 2 , wherein in step (i) the nano-roughened surface layer has a maximum layer thickness of 500 nm or less.4. The method according to claim 1 , wherein during step (ii) the one or more than one amino azole adsorbs on said surface of copper or copper alloy such that a protected surface of copper or copper alloy results.5. The method according to claim 1 , wherein in the acidic aqueous non-etching protector solution the molar ratio of all peroxides to all amino azoles is 1 or less.6. The method according to claim 1 , wherein the one or more than one peroxide ...

Method for anti-corrosion treatment of metallic copper-containing materials

An anticorrosion treatment method for a copper-containing material comprises: carrying out a sealed and pressurized reaction on a copper-containing material and a stabilizer in presence of a polar solvent and any assistant, the stabilizer being a compound capable of providing formates, so that the formates are adsorbed on the surface of the copper-containing material. In the method, formates are modified on the surface of the copper-containing material, accordingly, the oxidation resistance capability and the stability of the copper-containing material can be significantly improved while the electrical conductivity of the copper-containing material is not reduced, and the corrosion resistance of the copper-containing material and especially, the salt and alkali corrosion resistance of the copper-containing material are significantly improved.

METHOD FOR MANUFACTURING CIRCUIT BOARD

A method for manufacturing the circuit board comprises following steps of forming a silver layer on each of two opposite surfaces of an insulating substrate, and forming a copper layer on each silver layer, thereby obtaining a middle structure; defining at least one through-hole on the middle structure, and each through-hole extending through each copper layer; forming a copper wiring layer on the copper layers to cover each through-hole and a portion region of the copper layers, the copper wiring layer comprising a copper conductive structure passing through each through-hole, the copper conductive structure connecting the copper layers; removing the copper layers not covered by the copper wiring layer; and etching the silver layers to form a silver wiring layer corresponding to the copper wiring layer, wherein a first etching liquid, which does not etch the copper wiring layer, is used for etching the silver layers. 1. A method for manufacturing the circuit board comprising:forming a silver layer on each of two opposite surfaces of an insulating substrate, and forming a copper layer on a side of each silver layer away from the insulating substrate, the insulating substrate, two silver layers, and two copper layers forming a middle structure;defining at least one through-hole on the middle structure, and each of the at least one through-hole extending through each copper layer;forming a copper wiring layer on the copper layers to cover each of the at least one through-hole and a portion region of the copper layers, the copper wiring layer comprising a copper conductive structure passing through each of the at least one through-hole, the copper conductive structure connecting the copper layers;removing the copper layers not covered by the copper wiring layer; andetching the silver layers to form a silver wiring layer corresponding to the copper wiring layer, wherein a first etching liquid, which does not etch the copper wiring layer, is used for etching the silver ...

Method for producing piping and method for forming oxide film on inner surface of copper pipe

A pipe is manufactured through injecting a chloride ion-containing aqueous solution into a copper pipe to fill the copper pipe, thereby forming a copper oxide film on an inner surface of the copper pipe.

COPPER ALLOY PLATE STRIP FOR USE IN LED LEAD FRAME

A copper alloy sheet or strip for a lead frame of LED includes specific amounts of Fe, P, Zn, and Sn with the remainder being Cu and unavoidable impurities. A surface roughness thereof is less than 0.06 μm in terms of arithmetic average roughness Ra and is less than 0.5 μm in terms of ten-point average roughness Rz. The number of groove-shaped recesses present on the surface, each having a length of 5 μm or more and a depth of 0.25 μm or more, is 2 or less in a range of a square of 200 μm×200 μm with a pair of its sides running in transverse to a rolling direction. A thickness of a work affected layer formed of fine grains on the surface is 0.5 μm or less.

COMPOSITION AND METHOD FOR MICRO ETCHING OF COPPER AND COPPER ALLOYS

The present invention is related to a composition for micro etching of a copper or a copper alloy surface, wherein the composition comprises 2. Composition according to characterized in thatR1 is selected from the group consisting of hydrogen, methyl, ethyl, n-propyl, iso-propyl, phenyl and benzyl;R2 is selected from the group consisting of hydrogen, methyl, ethyl, n-propyl and iso-propyl;R3 is selected from the group consisting of hydrogen, methyl, ethyl, n-propyl and iso-propyl;R4 is selected from the group consisting of hydrogen, methyl, ethyl, n-propyl and iso-propyl.3. Composition according to characterized in that the R2 group is in the 5 or 6 position.4. Composition according to characterized in that R3 and R4 are the same.5. Composition according to characterized in that the etch refiner according to formula I is selected from the group consisting of 4-(6-methyl-1 claim 1 ,3-benzothiazol-3-ium-2-yl)-N claim 1 ,N-dimethylaniline chloride claim 1 , 4-(3-benzyl-6-methyl-1 claim 1 ,3-benzothiazol-3-ium-2-yl-N claim 1 ,N-dimethylaniline chloride claim 1 , 4-(3 claim 1 ,6-dimethyl-1 claim 1 ,3-benzothiazol-3-ium-2-yl)-N claim 1 ,N-dimethylaniline chloride claim 1 , 4-(3-benzyl-5-methyl-1 claim 1 ,3-benzothiazol-3-ium-2-yl)-N claim 1 ,N-dimethylaniline chloride claim 1 , 4-(3 claim 1 ,5-dimethyl-1 claim 1 ,3-benzothiazol-3-ium-2-yl)-N claim 1 ,N-dimethylaniline chloride claim 1 , 4-(3-methyl-6-ethoxy-1 claim 1 ,3-benzothiazol-3-ium-2-yl)-N claim 1 ,N-dimethylaniline chloride claim 1 , 4-(3-benzyl-1 claim 1 ,3-benzothiazol-3-ium-2-yl)-N claim 1 ,N-dimethylaniline chloride claim 1 , 4-(3-methyl-5-ethoxy-1 claim 1 ,3-benzothiazol-3-ium-2-yl)-N claim 1 ,N-dimethylaniline chloride claim 1 , 4-(3-benzyl-5-ethoxy-1 claim 1 ,3-benzothiazol-3-ium-2-yl)-N claim 1 ,N-diemthylaniline chloride claim 1 , 4-(3-benzyl-5-ethoxy-1 claim 1 ,3-benzothiazol-3-ium-2-yl)-N claim 1 ,N-dimethylaniline chloride claim 1 , 4-(6-methyl-1 claim 1 ,3-benzothiazol-3-ium-2-yl)-N claim 1 ,N- ...

High-Precision Zinc-Based Alloy Electrode Wire and Manufacture Method Thereof

The invention discloses a high-precision zinc-based alloy electrode wire, the external shell thereof consisting of: Zn: 70.5-95%; Cu: 2.5-27%; X: 0.02-4.0%; Y: 0.002-0.4%, and unavoidable impurities; where, X refers to any two kinds of metals selected from Ni, Ag, Cr, Si and Zr, and the weight percentage of each of these two kinds of metals is 0.01-2.0%; and Y refers to any two kinds of metals selected from Ti, Al, Co, B, and P, and the weight percentage of each of these two kinds of metals is 0.001-0.2%; the ε-phase in a metallurgical structure of the external shell is above 80 wt %. The invention also provides a method for manufacturing the electrode wire, which has high surface smoothness of the cut metal workpieces to improve the cutting precision. The method has simple process, high maneuverability, less steps, so as to facilitate large-scale and automated production. 1. A high-precision zinc-based alloy electrode wire , comprising:a core; andan external shell covering the core;whereinthe core is made of brass,the external shell is made from a material, the material's composition in weight percentage (wt %) consisting of:Zn: 70.5-95%; Cu: 2.5-27%; X: 0.02-4.0%; Y: 0.002-0.4%; and unavoidable impurities, and the unavoidable impurities is less than or equal to 0.3%;where, X refers to any two kinds of metals selected from Ni, Ag, Cr, Si and Zr, and the weight percentage of each of these two kinds of metals is 0.01-2.0%; and Y refers to any two kinds of metals selected from Ti, Al, Co, B, and P, and the weight percentage of each of these two kinds of metals is 0.001-0.2%;the external shell has a thickness of 2-4 um, the weight percentage of ε-phase in a metallurgical structure of the external shell is above 80 wt %, and a remainder component of the external shell is either γ-phase or η-phase; and the ε-phase is uniformly distributed on a surface of the core.2. A high-precision zinc-based alloy electrode wire comprising:a core; andan external shell covering the core ...

Metallic Material Surface Treatment Agent, Metallic Material Having Surface Treatment Coating, and Manufacturing Method Therefor

A surface treatment agent capable of forming a hexavalent chromium-free chemical conversion coating that can provide an excellent corrosion-resistant coating on various metallic materials; a metallic material having a surface treatment coating obtained therefrom; and a method of producing the same. A free fluorine ion-containing surface treatment agent for surface-treating a metallic material, which is obtained by mixing at least one supply source (A) of trivalent chromium-containing ions A; a supply source (B) of ions B that are at least one selected from titanium-containing ions and zirconium-containing ions; a water-soluble or water-dispersible compound (C) containing an alkoxysilyl group, an aromatic ring, a hydroxy group directly bonded to the aromatic ring, and at least one of primary, secondary, tertiary and quaternary amino groups, wherein the alkoxysilyl group is bonded to the nitrogen atom of the amino group directly or via an alkylene group; and a fluorine-containing compound (D) providing fluorine-containing ions. 1. A surface treatment agent for surface-treating a metallic material , the surface treatment agent obtained by mixing:at least one supply source (A) of trivalent chromium-containing ions A;a supply source (B) of ions B that are at least one selected from titanium-containing ions and zirconium-containing ions;a water-soluble or water-dispersible compound (C) comprising an alkoxysilyl group, an aromatic ring, a hydroxy group directly bonded to the aromatic ring, and at least one amino group selected from primary amino groups, secondary amino groups, tertiary amino groups, and quaternary ammonium groups, wherein the alkoxysilyl group is bonded to a nitrogen atom of the amino group directly or via an alkylene group; anda fluorine-containing compound (D) capable of providing fluorine-containing ions,wherein the surface treatment agent comprises free fluorine ions.2. The surface treatment agent according to claim 1 , wherein a ratio of a total mass ...

Sarcosine compound used as corrosion inhibitor

The sarcosine compounds used as a corrosion inhibitor according to the present invention include sarcosine and salt compounds thereof. The corrosion inhibitor is used in chemical mechanical polishing compositions or post CMP clean agents, which forms a protective film on the surface of a work piece to prevent the work piece from corrosion in chemical mechanical polishing, and thus common residue defect on the surface of a work piece due to the use of a conventional corrosion inhibitor (e.g. benzotriazole (BTA)) can be improved or the surface of a work piece can be protected from corrosion in post-CMP cleaning.

Cleaning formulation for removing residues on surfaces

The present disclosure provides a non-corrosive cleaning composition that is useful for removing residues from a semiconductor substrate. The composition can comprise water, at least one hydrazinocarboxylic acid ester, at least one water soluble carboxylic acid, optionally, at least one fluoride-containing compound, and, optionally, at least one corrosion inhibitor not containing a carboxyl group. The present disclosure also provides a method of cleaning residues from a semiconductor substrate using the non-corrosive cleaning composition.

Oxidizing aqueous cleaner for the removal of post-etch residues

An oxidizing aqueous cleaning composition and process for cleaning post-plasma etch residue and/or hardmask material from a microelectronic device having said residue thereon. The oxidizing aqueous cleaning composition includes at least one oxidizing agent, at least one oxidizing agent stabilizer comprising an amine species selected from the group consisting of primary amines, secondary amines, tertiary amines and amine-N-oxides, optionally at least one co-solvent, optionally at least one metal-chelating agent, optionally at least one buffering species, and water. The composition achieves highly efficacious cleaning of the residue material from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon.

Chemical mechanical polishing slurries and cleaners containing salicylic acid as a corrosion inhibitor

The invention provides methods for CMP polishing, residue removal and post-CMP polishing of a metal containing substrate. The CMP polishing methods for contacting a metal-containing substrate with a composition comprising an oxider, a salicylic acid compound, water, and an abrasive. The post-CMP polishing and residue removal methods require contacting a metal-containing substrate with a composition comprising an oxidizer, a salicylic acid compound, and water.

Copper corrosion inhibition system

There are provided metal corrosion inhibition cleaning compositions, methods and system for copper (Cu), tungsten (W), titanium (Ti), tantalum (Ta), cobalt (Co), and aluminum (Al). The metal corrosion inhibition cleaning compositions provide corrosion inhibition effects by use a combination of two chemicals—at least one multi-functional amine that has more than one amino groups; and at least one multi-functional acid that has more than one carboxylate groups. The metal corrosion inhibition cleaning compositions are effective for cleaning the residues deriving from high density plasma etching followed by ashing with oxygen containing plasmas; and slurry particles and residues remaining after chemical mechanical polishing (CMP).

Substrate-cleaning method and substrate-cleaning solution

In cleaning a substrate which has a metal material and a semiconductor material both exposed at the surface and which has been subjected to a chemical mechanical polishing treatment, the substrate is first cleaned with a first cleaning solution containing ammonia water, etc. and then with a second cleaning solution containing (a) a first complexing agent capable of easily forming a complex with the oxide of said metal material, etc. and (b) an anionic or cationic surfactant.

Process for removing contaminant from a surface and composition useful therefor

Particulate and metal ion contamination is removed from a surface, such as a semiconductor wafer containing copper damascene or dual damascene features, employing a fluoride-free aqueous composition comprising a dicarboxylic acid and/or salt thereof; and a hydroxycarboxylic acid and/or salt thereof or amine group containing acid.

Stabilizer for an aqueous solution for pickling and / or chemical shining of objects made of copper or copper alloys in a multi-stage process and use of the stabilizer

Acidic chemistry for post-CMP cleaning

This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an acidic chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant organic (such as carbon) contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer. Using acidic chemistry, it is possible to match the pH of the cleaning solution used after CMP to that of the last slurry used on the wafer surface.

Post clean treatment composition comprising an organic acid and hydroxylamine

A composition for removal of chemical residues from metal or dielectric surfaces or for chemical mechanical polishing of a copper surface is an aqueous solution with a pH between about 3.5 and about 7. The composition contains a monofuctional, difunctional or trifunctional organic acid and a buffering amount of a quaternary amine, ammonium hydroxide, hydroxylamine, hydroxylamine salt, hydrazine or hydrazine salt base. A method in accordance with the invention for removal of chemical residues from a metal or dielectric surface comprises contacting the metal or dielectric surface with the above composition for a time sufficient to remove the chemical residues. A method in accordance with the invention for chemical mechanical polishing of a copper surface comprises applying the above composition to the copper surface, and polishing the surface in the presence of the composition.

Method of cleaning post-cmp wafer

A post-CMP wafer is loaded into a buffer unit of a cleaning apparatus and is kept moist by adding a chemical. The post-CMP wafer is then loaded into a cleaning unit of the cleaning apparatus for performing the following cleaning process. The chemical added in the buffer unit is used to reduce the adhesion of benzotriazole (BTA) for improving the cleanliness of the post-CMP wafer.

Acidic chemistry for Post-CMP cleaning

This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an acidic chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant organic (such as carbon) contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer. Using acidic chemistry, it is possible to match the pH of the cleaning solution used after CMP to that of the last slurry used on the wafer surface.

Acidic chemistry for Post-CMP cleaning using a composition comprising mercaptopropionic acid

This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an acidic chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant organic (such as carbon) contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer. Using acidic chemistry, it is possible to match the pH of the cleaning solution used after CMP to that of the last slurry used on the wafer surface.

Metal surface treatment

Methods and apparatus for cleaning semiconductor substrates after polishing of copper film

A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and a fluoride compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.

Methods and apparatus for cleaning semiconductor substrates after polishing of copper film

A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and a fluoride compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.

Methods and apparatus for cleaning semiconductor substrates after polishing of copper film

A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and a fluoride compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.

Compositions and method for treating a copper surface

The present invention is directed to compositions for copper passivation and methods of use of such compositions.

Post clean treatment

A composition for removal of chemical residues from metal or dielectric surfaces or for chemical mechanical polishing of a copper surface is an aqueous solution with a pH between about 3.5 and about 7. The composition contains a monofunctional, difunctional or trifunctional organic acid and a buffering amount of a quaternary amine, ammonium hydroxide, hydroxylamine, hydroxylamine salt, hydrazine or hydrazine salt base. A method in accordance with the invention for removal of chemical residues from a metal or dielectric surface comprises contacting the metal or dielectric surface with the above composition for a time sufficient to remove the chemical residues. A method in accordance with the invention for chemical mechanical polishing of a copper surface comprises applying the above composition to the copper surface, and polishing the surface in the presence of the composition.

Cleaning compositions for removing etching residue and method of using

A stripping and cleaning composition for removing resists and etching residue from substrates containing hydroxylamine and at least one alkanolamine is described. Further, a cleaning composition for removing etching residue from semiconductor substrates containing hydroxylamine, at least one alkanolamine, at least one chelating agent, and water is described. The preferred chelating agent is 1,2-dihydroxybenzene or a derivative thereof. The chelating agent provides added stability and effectiveness to the cleaning composition.

Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials

A composition for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent is described. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined. Following use of the composition, the non-used portion of the composition can be disposed of or be reactivated by the addition of a chelating agent.

Alkanolamine semiconductor process residue removal composition and process

A two carbon atom linkage alkanolamine compound composition comprises the two carbon atom linkage alkanolamine compound, gallic acid or catechol, and optionally, an aqueous hydroxylamine solution. The balance of the composition is made up of water, preferably high purity deionized water, or another suitable polar solvent. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, comprises contacting the substrate with the composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of the two carbon atom linkage alkanolamine compound in the composition and process provides superior residue removal without attacking titanium or other metallurgy, oxide or nitride layers on the substrate.

Hydroxylamine-gallic compound composition and process

A hydroxylamine-gallic compound composition comprises a hydroxylamine compound, at least one alcohol amine compound which is miscible with the hydroxylamine compound and a gallic compound. A process for removing photoresist or other polymeric material or a residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, in accordance with this invention comprises contacting the substrate with a hydroxylamine compound, an alcohol amine compound which is miscible with the hydroxylamine compound and a gallic compound for a time and at a temperature sufficient to remove the photoresist, other polymeric material or residue from the substrate. Use of a gallic compound in place of catechol in the composition and process reduces attack on titanium metallurgy by, e.g., about three times.

Ethylenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal process

An ethylenediaminetetraacetic acid or a mono-, di-, tri- or tetraammonium salt thereof residue cleaning composition removes photoresist and other residue from integrated circuit substrates. The balance of the composition is desirably made up of water, preferably high purity deionized water, or another suitable polar solvent. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, comprises contacting the substrate with the composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of the ethylenediaminetetraacetic acid or a mono-, di-, tri- or tetraammonium salt thereof in the composition and process provides superior residue removal without attacking titanium or other metallurgy, oxide or nitride layers on the substrate.

Cleaning compositions for removing etching residue and method of using

An etching residue remover for cleaning etching residue from a substrate, derived from a mixture of at least hydroxylamine, an alkanolamine which is miscible with said hydroxylamine, water, and, optionally, a chelating agent, wherein the hydroxylamine and the alkanolamine are present in amounts sufficient to clean etching residue from the substrate.

Method for removing etching residue using a hydroxylamine-containing composition

A method for removing resists and etching residue from substrates using a stripping and cleaning composition containing hydroxylamine and at least one alkanolamine is described. Further, a method for removing etching residue from semiconductor substrates using a cleaning composition containing hydroxylamine, at least one alkanolamine, at least one chelating agent, and water is described. The preferred chelating agent is 1,2-dihydroxybenzene or a derivative thereof. The chelating agent provides added stability and effectiveness to the cleaning composition of the method.

Cleaning compositions for removing etching residue with hydroxylamine, alkanolamine, and chelating agent

A stripping and cleaning composition for removing resists and etching residue from substrates containing hydroxylamine and at least one alkanolamine is described. Further, a cleaning composition for removing etching residue from semiconductor substrates containing hydroxylamine, at least one alkanolamine, at least one chelating agent, and water is described. The preferred chelating agent is 1,2-dihydroxybenzene or a derivative thereof. The chelating agent provides added stability and effectiveness to the cleaning composition.

Cleaning compositions for removing etching residue and method of using

A stripping and cleaning composition for removing resists and etching residue from substrates containing hydroxylamine and at least one alkanolamine is described. Further, a cleaning composition for removing etching residue from semiconductor substrates containing hydroxylamine, at least one alkanolamine, at least one chelating agent, and water is described. The preferred chelating agent is 1,2-dihydroxybenzene or a derivative thereof. The chelating agent provides added stability and effectiveness to the cleaning composition.

Hydroxylamine-gallic compound composition and process

A hydroxylamine-gallic compound composition comprises a hydroxylamine compound, at least one alcohol amine compound which is miscible with the hydroxylamine compound and a gallic compound. A process for removing photoresist or other polymeric material or a residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, in accordance with this invention comprises contacting the substrate with a hydroxylamine compound, an alcohol amine compound which is miscible with the hydroxylamine compound and a gallic compound for a time and at a temperature sufficient to remove the photoresist, other polymeric material or residue from the substrate. Use of a gallic compound in place of catechol in the composition and process reduces attack on titanium metallurgy by, e.g., about three times.

Process using hydroxylamine-gallic acid composition

A hydroxylamine-gallic compound composition comprises a hydroxylamine compound, at least one alcohol amine compound which is miscible with the hydroxylamine compound and a gallic compound. A process for removing photoresist or other polymeric material or a residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, in accordance with this invention comprises contacting the substrate with a hydroxylamine compound, an alcohol amine compound which is miscible with the hydroxylamine compound and a gallic compound for a time and at a temperature sufficient to remove the photoresist, other polymeric material or residue from the substrate. Use of a gallic compound in place of catechol in the composition and process reduces attack on titanium metallurgy by, e.g., about three times.

Oxidant and passivant composition and method for use in treating a microelectronic structure

A composition that may be used for cleaning a metal containing conductor layer, such as a copper containing conductor layer, within a microelectronic structure includes an aqueous acid, along with an oxidant material and a passivant material contained within the aqueous acid. The composition does not include an abrasive material. The composition is particularly useful for cleaning a residue from a copper containing conductor layer and an adjoining dielectric layer that provides an aperture for accessing the copper containing conductor layer within a microelectronic structure.

Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate

A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Composition for selective etching of oxides over metals

A composition for selective etching of oxides over a metal. The composition contains water, hydroxylammonium salt, carboxylic acid, a fluorine containing compound, and optionally, a base. The pH of the composition is about 2 to 6.

Post clean treatment

A composition for removal of chemical residues from metal or dielectric surfaces or for chemical mechanical polishing of a copper or aluminum surface is an aqueous solution with a pH between about 3.5 and about 7. The composition contains a monofunctional, difunctional or trifunctional organic acid and a buffering amount of a quaternary amine, ammonium hydroxide, hydroxylamine, hydroxylamine salt, hydrazine or hydrazine salt base. A method in accordance with the invention for removal of chemical residues from a metal or dielectric surface comprises contacting the metal or dielectric surface with the above composition for a time sufficient to remove the chemical residues. A method in accordance with the invention for chemical mechanical polishing of a copper or aluminum surface comprises applying the above composition to the copper or aluminum surface, and polishing the surface in the presence of the composition.

세정 방식용 조성물 및 반도체소자 또는 표시소자의 제조 방법

구리를 포함하는 금속 배선을 가지는 반도체소자 등의 제조 공정에 이용되고, 방식제 성분이 피라졸, 3,5-디메틸피라졸과 같은 피라졸 유도체, 1,2,4-트리아졸과 같은 트리아졸 유도체, 이미노 2아세트산, 에틸렌디아민 2프로피온산 염산염과 같은 아미노카르복시산류, 디이소프로필디설피드, 디에틸디설피드와 같은 디설피드 화합물 중 어느 하나이며, 세정제 성분이 불화암모늄, 불화테트라메틸암모늄, 아세트산암모늄, 아세트산, 글리옥실산, 옥살산, 아스코르브산, 1,2-디아미노프로판 및 디메틸아세트아미드 중 어느 하나인 세정 방식용 조성물이다. 또, 세정 방식용 조성물을 이용한 반도체소자 등의 제조 방법이다.

Process for removing contaminant from a surface and composition useful therefor

Particulate and metal ion contamination is removed from a surface, such as a semiconductor wafer containing copper damascene or dual damascene features, employing a fluoride-free aqueous composition comprising a dicarboxylic acid and/or salt thereof; and a hydroxycarboxylic acid and/or salt thereof or amine group containing acid.

Process for Removing Contaminant from a Surface and Composition Useful Therefor Description

Particulate and metal ion contamination is removed from a surface, such as a semiconductor wafer containing copper damascene or dual damascene features, employing a fluo-ride-free aqueous composition comprising a dicarboxylic acid and/or salt thereof; and a hydroxycarboxylic acid and/or salt thereof or amine group containing acid.

Process for removing contaminant from a surface and composition useful therefor

Particulate and metal ion contamination is removed from a surface, such as a semiconductor wafer containing copper damascene or dual damascene features, employing a fluoride-free aqueous composition comprising a dicarboxylic acid and/or salt thereof; and a hydroxycarboxylic acid and/or salt thereof or amine group containing acid.

Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate

A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate

A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate

A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate

A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate

A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Methods of cleaning copper surfaces in the manufacture of printed circuit boards

The present invention sets forth an improved method of microetching a metal substrate by contacting the substrate with an aqueous composition comprising a sodium persulfate or hydrogen peroxide oxidizing agent, acid, and one or more additives. When the oxidizing agent is sodium persulfate, the one or more additives generally comprise an aliphatic saturated dicarboxylic acid. When the oxidizing agent is hydrogen peroxide, the one or more additives generally comprise a stabilizer and amino tris(methylene phosphonic acid).

Solutions for cleaning surfaces of copper and its alloys

A solution for pickling copper and its alloys contains one or more mineral acids, such as sulphuric acid or phosphoric acid, in combination with hydrogen peroxide and a hydroxy acid, such as citric acid or gluconic acid, together with a nitrogen combination of the type substituted triazole and/or a tertiary amine of the general formula ##STR1## in which R is an aliphatic carbon chain containing less than 24 carbon atoms and the sum of n 1 and n 2 is less than 30.

Etching solution for copper or copper alloy

An etching solution for copper or copper alloys comprising, (a) sulfuric acid, (b) a persulfate, (c) at least one compound selected from imidazole, imidazole derivatives, pyridine derivatives, triazine, and triazine derivatives, and (d) water. The etching solution exhibits a high etching speed and does not oxidize the copper surfaces after etching.

Microetching method for copper or copper alloy

A microetching composition for copper or copper alloys comprising, (a) a cupric ion source, (b) an organic acid with an acid dissociation constant (pKa) of 5 or less, (c) a halide ion source, and (d) water. The composition can produce surfaces of copper or copper alloy exhibiting excellent adhesion to resins such as prepregs and resists and superior solderability. The composition can be very adaptable to the manufacture of printed wiring boards with highly integrated fine line patterns.

Composition and method for improving adhesion of coatings to copper surfaces

A composition for cleaning and improving the adhesion characteristics of a copper surface (which is in turn adhered to an underlying substrate) so as to enable a coating, e.g., of photoresist, to be adhered easily and completely to the copper surface, the cleaning and adhesion promoting composition consisting essentially of an aqueous solution of an alkane sulfonic acid, a surfactant and an oxidizing agent of a type, and present in an amount, sufficient to provide controlled conversion of the copper surface to a substantially clean, micro-roughened surface, without removing the copper surface from the underlying substrate, so that the adhesion characteristics of the copper surface are substantially increased for receiving and securely adhering a subsequently applied coating.

Etching solution for copper or copper alloy

An etching solution for copper or copper alloys comprising, (a) sulfuric acid, (b) a persulfate, (c) at least one compound selected from imidazole, imidazole derivatives, pyridine derivatives, triazine, and triazine derivatives, and (d) water. The etching solution exhibits a high etching speed and does not oxidize the copper surfaces after etching.

에칭후 잔류물을 제거하기 위한 산화성 수성 세정제

본 발명은 플라즈마 에칭후 잔류물 및/또는 하드마스크 물질을, 상기 잔류물을 가지는 마이크로전자 장치로부터 세정하는 산화성 수성 세정 조성물 및 방법에 관한 것이다. 상기 산화성 수성 세정 조성물은 1종 이상의 산화제, 1차 아민, 2차 아민, 3차 아민 및 아민-N-옥시드로 이루어진 군에서 선택된 아민 종을 포함하는 1종 이상의 산화제 안정화제, 선택적으로 1종 이상의 공용매, 선택적으로 1종 이상의 금속 킬레이트화제, 선택적으로 1종 이상의 완충제, 및 물을 포함한다. 상기 조성물은 마이크로전자 장치 상에 존재하는 층간 유전체 및 금속 연결재를 손상시키지 않으면서, 동시에 마이크로전자 장치로부터 잔류 물질을 매우 효과적으로 세정할 수 있다.

Method for defect reduction

A method and a composition is disclosed comprising polishing the substrate using a slurry and introducing solution onto a metallized layer that comprises an acid.

Methods for polishing and/or cleaning copper interconnects and/or film and compositions therefor

The present invention provides methods of polishing and/or cleaning copper interconnects using sulfonic acid compositions.

Methods for polishing and/or cleaning copper interconnects and/or film and compositions therefor

The present invention provides methods of polishing and/or cleaning copper interconnects using bis(perfluoroalkanesulfonyl) imide acids or copper tris(perfluoroalkanesulfonyl) methide acids compositions.

Process for removing contaminant from a surface and composition useful therefor

Particulate and metal ion contamination is removed from a surface, such as a semiconductor wafer containing copper damascene or dual damascene features, employing a fluoride-free aqueous composition comprising a dicarboxylic acid and/or salt thereof; and a hydroxycarboxylic acid and/or salt thereof or amine group containing acid.

Methods and apparatus for cleaning semiconductor substrates after polishing of copper film

A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and a fluoride compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.

Methods and apparatus for cleaning semiconductor substrates after polishing of copper film

A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.

Cleaning solution and method for cleaning semiconductor substrates after polishing of cooper film

A cleaning solution for cleaning a semiconductor substrate is formed by mixing an amount of citric acid and an amount of ammonia in deionized water. In one embodiment, the amount of citric acid is in a range from about 0.18% by weight to about 0.22% by weight and the amount of ammonia is in a range from about 0.0225% by weight to about 0.0275% by weight, and the cleaning solution has a pH of about 4. A method for cleaning a semiconductor substrate having a polished copper layer in which a concentrated cleaning solution is mixed with deionized water proximate to a scrubbing apparatus also is described.

Cleaning solution and method for cleaning semiconductor substrates after polishing of copper film

A cleaning solution for cleaning a semiconductor substrate is formed by mixing an amount of citric acid, an amount of ammonium fluoride, and an amount of hydrogen fluoride in deionized water. In one embodiment, the amount of citric acid is in a range from about 0.09% by weight to about 0.11% by weight, the amount of ammonium fluoride is in a range from about 0.4% by weight to about 0.6% by weight, the amount of hydrogen fluoride is in a range from about 0.09% by weight to about 0.11% by weight, and the cleaning solution has a pH of about 4. A method for cleaning a semiconductor substrate having a polished copper layer in which a concentrated cleaning solution is mixed with deionized water proximate to a scrubbing apparatus also is described.

Pickling and/or chemical polishing of copper or its alloys - using aq. solns. contg. mineral acid, hydrogen peroxide, and aliphatic alcohol as stabiliser

One or a sequence of aq. solns. are used contg. one or more mineral acids, e.g. H2SO4-H3PO4, plus H2O2 and >=0.5 ml/l, esp. 0.5-100 ml/l of a stabiliser, which is an aliphatic alcohol in the presence of dissolved Cu. The pref. soln. contains 5-350 g/l H2SO4 plus 1-100 g/l H2O2, 0.5-100 ml/l n-propanol, and 0.1-50 g/l urea or its derivs. The brightening process pref. uses a pre-pickling soln. (I), then a pickling soln. (II), where soln. (I) contains a higher concn. of H2SO4, e.g. 10 times, as compared with soln. (II); and the H2O2 in the solns. I:II has ratio 1:3. A third soln. (III) contg. 1-100 g/- is pref. used as a final pickle. The pickled objects are pref. passivated in a soln. (IV) contg. equal amts. of H3PO4 and H2CrO4, both below 10 g/l. Rapid dissoln. of oxides with very little attack on the base metal; no HNO3 casting atmospheric pollution is used; and the Cu dissolved can be reclaimed electrolytically.

Sarcosine compound used as corrosion inhibitor

The sarcosine compounds used as a corrosion inhibitor according to the present invention include sarcosine and salt compounds thereof. The corrosion inhibitor is used in chemical mechanical polishing compositions or post CMP clean agents, which forms a protective film on the surface of a work piece to prevent the work piece from corrosion in chemical mechanical polishing, and thus common residue defect on the surface of a work piece due to the use of a conventional corrosion inhibitor (e.g. benzotriazole (BTA)) can be improved or the surface of a work piece can be protected from corrosion in post-CMP cleaning.

Improved acidic chemistry for post-cmp cleaning

This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an acidic chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant organic (such as carbon) contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer. Using acidic chemistry, it is possible to match the pH of the cleaning solution used after CMP to that of the last slurry used on the wafer surface.

Methods of cleaning copper surfaces in the manufacture of printed circuit boards

The present invention sets forth an improved method of microetching a metal substrate by contacting the substrate with an aqueous composition comprising a sodium persulfate or hydrogen peroxide oxidizing agent, acid, and one or more additives. When the oxidizing agent is sodium persulfate, the one or more additives generally comprise an aliphatic saturated dicarboxylic acid. When the oxidizing agent is hydrogen peroxide, the one or more additives generally comprise a stabilizer and amino tris(methylene phosphonic acid).

一种用于金属基板抛光后的清洗液及其使用方法

本发明提供了一种用于金属化学机械抛光后的清洗液，包含至少一种有机酸，有机磷酸类化合物，至少一种阴离子表面活性剂。该清洗液可用于含金属的晶片抛光后的表面清洗。可将抛光后残留在晶片表面的研磨颗粒、金属离子、金属腐蚀抑制剂等有机物去除，降低表面缺陷。

一种用于金属基板抛光后的清洗液及其使用方法

本发明提供了一种用于金属化学机械抛光后的清洗液，包含至少一种有机酸，有机磷酸类化合物，一种阴离子表面活性剂以及一种非离子表面活性剂。该清洗液可用于清洗含有金属的晶片抛光后的表面。可将抛光后残留在晶片表面的研磨颗粒及金属离子、金属腐蚀抑制剂等有机物去除，改善清洗后晶圆表面的亲水性，降低表面缺陷。

Method for isotropic etching of copper

Copper and copper alloys are etched to provide uniform and smooth surface by employing an aqueous composition that comprises an oxidant, a mixture of at least one weak complexant and at least one strong complexant for the copper or copper alloy, and water and has a pH of about 6 to about 12 so as to form an oxidized etch controlling layer and to uniformly remove the copper or copper alloy; and then removing the oxidized etch controlling layer with a non-oxidizing composition. Copper and copper alloy structure, having smooth upper surfaces are also provided.

Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials

Cleaning formulation for removing residues on surfaces

The present disclosure provides a non-corrosive cleaning composition that is useful for removing residues from a semiconductor substrate. The composition can comprise water, at least one hydrazinocarboxylic acid ester, at least one water soluble carboxylic acid, optionally, at least one fluoride-containing compound, and, optionally, at least one corrosion inhibitor not containing a carboxyl group. The present disclosure also provides a method of cleaning residues from a semiconductor substrate using the non-corrosive cleaning composition.

Post clean treatment

A composition for removal of chemical residues from metal or dielectric surfaces or for chemical mechanical polishing of a copper surface is an aqueous solution with a pH between about 3.5 and about 7. The composition contains a monofunctional, difunctional or trifunctional organic acid and a buffering amount of a quaternary amine, ammonium hydroxide, hydroxylamine, hydroxylamine salt, hydrazine or hydrazine salt base. A method in accordance with the invention for removal of chemical residues from a metal or dielectric surface comprises contacting the metal or dielectric surface with the above composition for a time sufficient to remove the chemical residues. A method in accordance with the invention for chemical mechanical polishing of a copper surface comprises applying the above composition to the copper surface, and polishing the surface in the presence of the composition.

Acidic chemistry for post-CMP cleaning

This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an acidic chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant organic (such as carbon) contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer. Using acidic chemistry, it is possible to match the pH of the cleaning solution used after CMP to that of the last slurry used on the wafer surface.

Stripping compositions comprising hydroxylamine and alkanolamine

A stripping composition for removing resists from substrates containing hydroxylamine and at least one alkanolamine is described. Optionally, one or more polar solvents can also be included in the stripping composition. The stripping composition is especially suitable for removing a photoresist from a substrate during the manufacture of semiconductor integrated circuits and for removing cured polymer coatings, such as polyimide coatings.

Method of stripping resists from substrates using hydroxylamine and alkanolamine

A stripping composition for removing resists from substrates containing hydroxylamine and at least one alkanolamine is described. Optionally, one or more polar solvents can also be included in the stripping composition. The stripping composition is especially suitable for removing a photoresist from a substrate during the manufacture of semiconductor integrated circuits and for removing cured polymer coatings, such as polyimide coatings.

Method of removing etching residue

A (method using a composition) for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined. Following use of the composition, the non-used portion of the composition can be disposed of or be reactivated by the addition of a chelating agent.

基板洗浄方法および基板洗浄液

【要約】 【課題】ＣＭＰ後、表面に金属材料および半導体材料が 露出した基板を洗浄する基板洗浄方法において、パーテ ィクルや金属の汚染を従来以上に低減し、特に金属表面 に吸着した金属不純物を効果的に除去すること。 【解決手段】まずアンモニア水等を含む第一の洗浄液に より基板を洗浄する（第一の工程）。ついで、（ａ）上 記金属材料または上記研磨液に含まれる金属の酸化物と 錯体を形成しやすい第一の錯化剤、および（ｂ）アニオ ン系またはカチオン系の界面活性剤を含む第二の洗浄液 により基板を洗浄する（第二の工程）。第二の洗浄液 に、（ｃ）化学的機械的研磨処理をした後に表面に残留 する金属不純物と錯体を形成しやすい第二の錯化剤を添 加してもよい。

一种在铜合金表面进行表面活化处理的方法

本申请公开了一种在铜合金表面进行表面活化处理的方法。包括以下步骤：1）将铜合金待电镀件进行电解除油并水洗；2）将电解除油、水洗之后的铜合金待电镀件传送至活化液中并在室温下进行活化；活化液由包含以下组分制成：A剂、B剂、硫酸；其中A剂由包含以下组分制成：A剂由包含以下体积百分比的组分制成：过硫酸钠70‑90%、氯化钠0.5‑5%、柠檬酸5‑15%、尿素4‑10%；B剂由包含以下组分制成：非离子表面活性剂、氧化铁、去离子水；3）将活化完成后的铜合金待电镀件进行水洗并烘干，从而得到电镀产品，本申请的方法具有改善铜和铜合金材料活化不足或浸蚀过度、生产过程稳定、并且能够适应不同成分的铜和铜合金材料优点。

Selective removal chemistries for semiconductor applications, methods of production and uses thereof

Removal chemistry solutions and methods of production thereof are described herein that include at least one fluorine-based constituent, at least one chelating component, surfactant component, oxidizing component or combination thereof, and at least one solvent or solvent mixture. Removal chemistry solutions and methods of production thereof are also described herein that include at least one low H 2 O content fluorine-based constituent and at least one solvent or solvent mixture.

Method of clarifying surface of copper rolled wire

耐腐蚀耐高温银铜包覆粉的生产方法

本发明公开了一种银铜包覆粉的生产方法，主要包括铜粉的清洗、铜粉包覆、银铜包覆粉的后期处理三个步骤。其中铜粉清洗时采用稀酸添加表面活性剂的方式省却了常规银铜包覆粉制备过程中的活化、敏化阶段，简化工艺，操作方便；镀银过程中，添加了微量的一种或几种组合的其他金属及非金属元素，能够在和银原子的共沉积过程中形成不同的合金体系，使银铜包覆粉的镀层致密光亮、孔隙率低、耐腐蚀、耐高温，可以抵抗住下游客户端电子浆料的盐雾及抗氧化测试；本发明提供的制备银铜包覆粉的方法，工序简单、易操作，适合工业大规模生产。

Method for surface treatment of metals using bacteria

The present invention relates to a method of surface treating metal using bacteria and, more specifically, relates to a method of surface treating metal wherein metal in which a deformed layer formed on a surface layer is immersed in a culture medium in which metal oxide bacteria are cultured for the metal oxide bacteria to selectively oxidize, extract, and remove the deformed layer of the metal to finely be processed. As such, damage to a metal base material is minimized to effectively remove the deformed layer of the metal. Moreover, a step of partially coating a surface of the metal is added more to generate a fine pattern having various sizes and shapes.

Solution for simultaneous degreasing, etching and polishing of copper and its alloys

Изобретение относитс  к химической обработке меди и ее сплавов, преимущественно к растворам дл  одновременного обезжиривани , травлени  и полировани . Цель изобретени  - повышение работоспособности раствора и снижение температуры процесса. Раствор содержит, мае. %: серна  кислота (пл. 1,82 г/см3) 5,5-6,5; сол на  кислота (пл. 1,17 г/см j 0,,7; тиомочевина 0,3-0,5; дихромат аммони  2,0-3,0; дигид- роортофосфат натри  1,0-2,0; стеарон-6 0,1- 0,2; вода остальное. Введение в раствор дихромата аммони , дигидроортофосфата натри , а также использование в качестве поверхностно-активного вещества стеарона-6 позвол ет повысить работоспособность раствора и снизить температуру раствора. 2 табл. сл The invention relates to the chemical treatment of copper and its alloys, mainly to solutions for simultaneous degreasing, pickling and polishing. The purpose of the invention is to increase the efficiency of the solution and reduce the process temperature. The solution contains May. %: sulfuric acid (pl. 1.82 g / cm3) 5.5-6.5; hydrochloric acid (pl. 1.17 g / cm j 0, 7; thiourea 0.3-0.5; ammonium dichromate 2.0-3.0; sodium dihydrogen phosphate 1.0-2.0; stearone -6 0.1-0.2; water the rest. The introduction of ammonium dichromate, sodium dihydrogen orthophosphate into the solution, and the use of stearone-6 as a surfactant can increase the efficiency of the solution and reduce the temperature of the solution.

Microetching composition for copper or copper alloy

(a) 제2구리 이온원, (b) 산해리 정수(pKa) 5이하의 유기산, (c) 할라이드 이온원 및 (d) 물을 함유하는 구리 또는 구리 합금용 마이크로엣칭 조성물. 이 조성물은 프리프레그 및 레지스트와 같은 수지에 대해 우수한 부착력 및 뛰어난 납땜능을 나타내는 구리 또는 구리합금 표면을 생성할 수 있다. 이 조성물은 고집적의 정교한 라인 패턴을 갖는 인쇄회로기판의 제조에 매우 적합하다. A microetching composition for a copper or copper alloy containing (a) a cupric ion source, (b) an organic acid having an acid dissociation constant (pKa) of 5 or less, (c) a halide ion source, and (d) water. This composition can produce copper or copper alloy surfaces that exhibit excellent adhesion and excellent solderability to resins such as prepregs and resists. This composition is well suited for the manufacture of printed circuit boards having a highly integrated and precise line pattern.

用于除去蚀刻后残余物的含水氧化清洗剂

本发明公开了一种用于从其上具有等离子体蚀刻后残余物和/或硬掩模材料的微电子器件上清洗所述残余物的含水氧化清洗组合物和方法。所述含水氧化清洗组合物包括至少一种氧化剂、至少一种氧化剂稳定剂、任选至少一种有机共溶剂、任选至少一种金属螯合剂、任选至少一种缓冲剂和水，所述氧化剂稳定剂包括选自伯胺、仲胺、叔胺和胺-N-氧化物的胺类物质。所述组合物可实现从微电子器件上高效清洗残余材料，同时不会损坏其上存在的层间介电材料和金属互连材料。

Piping deposit removal from stator water cooling systems

본 발명은 스테이터 수냉 시스템 배관 재료 표면으로부터 산화구리 부착물을 제거하는 방법을 제공한다. 본 발명은 발전기를 스테이터 수냉 시스템으로부터 제거하며, 발전기가 분리된 지점에서 스테이터 수냉 시스템에 연결 배관을 연결하여 스테이터 수냉 시스템이 발전기없이 작동하게 하며, 모든 산화구리 부착물을 실질적으로 용해 또는 제거하기에 충분한 시간 동안 배관 재료 표면으로부터 산화구리 부착물을 용해 또는 제거하는 충분한 양의 약품 수용액을 공급하며, 배관 재료 표면을 세정한 배출수가 기본적으로 중성이 될 때까지 충분한 물로 배관 재료 표면을 세정한다. The present invention provides a method for removing copper oxide deposits from the stator water cooling system piping material surface. The present invention removes the generator from the stator water cooling system, connects the connecting pipe to the stator water cooling system at the point where the generator is disconnected so that the stator water cooling system operates without the generator, and is sufficient to substantially dissolve or remove all copper oxide deposits. A sufficient amount of chemical aqueous solution is supplied to dissolve or remove the copper oxide deposits from the piping material surface for a period of time, and the piping material surface is cleaned with sufficient water until the effluent that has cleaned the piping material surface is essentially neutral.

高导热性能的铜基改性氧化石墨烯复合材料及制备方法

本发明提供高导热性能的铜基改性氧化石墨烯复合材料及制备方法，属于复合材料技术领域。本发明首先采用硅烷偶联剂对氧化石墨烯表面进行改性，得到硅烷偶联剂‑氧化石墨烯产物；最后采取电泳沉积的方法在导电基体铝上制备一层可控的硅烷偶联剂改性石墨烯/铝复合材料。本发明所制备的硅烷偶联剂改性石墨烯/铜合金复合材料分布均匀、不含其他杂质，能显著提高铜基体的导热性，所得复合材料在散热材料中有着潜在的应用价值。

Method of surface treatment for metal glass part, and metal glass part with its surface treated by the method

피막의 내구성과, 유채색성을 겸비한 표면층을 가지는 금속 유리 부품 및 그 표면층의 형성 방법을 제공한다. 금속 유리 부품(10)의 표면에, 질산과 불산의 혼합 수용액(18)을 반응시켜 산화피막(12) 제거를 하는 동시에, 앵커 결합 형상(14)을 금속 유리 부품(10)의 표면에 준비하는 계면 활성 처리를 하고, 이어서, 전기 도금 또는 무전해 도금을 행함으로써 금속 유리 부품(10)의 표면에 도금 피막(16)을 형성한다. 이로써, 내구성과 유채색을 겸비한 금속 유리 표면층을 형성할 수 있다. 도금, 도금 피막금속 유리 부품, 산화피막, 앵커 결합 형상, 계면 활성 처리, 전기 도금, 무전해 Provided are a metallic glass part having a surface layer having a coating film durability and chromaticity and a method for forming the surface layer. The surface of the metallic glass part 10 is reacted with the mixed aqueous solution 18 of nitric acid and hydrofluoric acid to remove the oxide film 12 and the anchor bonding shape 14 is prepared on the surface of the metallic glass part 10 The plating film 16 is formed on the surface of the metallic glass part 10 by electroplating or electroless plating. As a result, a metallic glass surface layer having durability and chromatic color can be formed. Plating, Plating Coating Metal glass parts, Anodized coating, Anchor bonding shape, Surfactant treatment, Electroplating, Electroless

一种用于硫酸-过硫酸盐体系微蚀剂的降速添加剂

本发明公开了一种用于硫酸‑过硫酸盐体系微蚀剂的添加剂，包括具有式I结构的二酸类物质及其二酸盐： 该添加剂通过与铜面作用可显著降低该硫酸‑过硫酸盐型微蚀剂的微蚀速率，此外添加剂的使用且对板面的外观以及微观形貌无明显影响，不会对后续工艺造成影响。该添加剂的使用方法可以是固体直接添加使用或先采用溶剂先溶解后添加到微蚀剂中使用，使用方式便捷，可有效提高印制电路板加工效率。

Semiconductor device manufacturing method including cleaning surface layer

표면 세정을 포함하는 반도체소자 제조방법을 제시한다. 본 발명에 따르면, 반도체 기판 상에 콘택홀을 가지는 절연층을 형성하고, 콘택홀에 노출된 표면의 자연산화물 오염물을 글리콜(glycol)류 유기화합물 용액 또는 이소프로필알코올(IPA)에 불산(HF), 불소 이온(F - ) 또는 불산 이온(HF 2 - )의 화학종을 함유한 불산(HF) 용액을 혼합하여 식각액(etchant)을 준비하고, 식각액을 이용하여 세정 대상층의 표면 오염물을 세정하는 반도체소자 제조방법을 제시한다. 이때, 식각액을 이용하여 바람직하게 1.0 이하의 저선택비(low selectivity)를 구현하며 세정한다. 이후, 콘택홀을 도전층으로 채워 연결콘택을 형성한다. A semiconductor device manufacturing method including surface cleaning is provided. According to the present invention, an insulating layer having a contact hole is formed on a semiconductor substrate, and natural oxide contaminants on the surface exposed to the contact hole are dissolved in glycol organic compound solution or isopropyl alcohol (IPA) in hydrofluoric acid (HF). A semiconductor that prepares an etchant by mixing a hydrofluoric acid (HF) solution containing a species of fluorine ion (F − ) or fluoride ion (HF 2 − ), and cleans the surface contaminants of the layer to be cleaned using the etchant. A device manufacturing method is provided. At this time, the etching solution is used to wash while implementing a low selectivity of 1.0 or less. Thereafter, the contact hole is filled with a conductive layer to form a connection contact. 자연산화물, SAC, 글리콜, IPA, 불산 Natural Oxides, SAC, Glycol, IPA, Hydrofluoric Acid