Hybrid Silicon Wafer

A hybrid silicon wafer which is a silicon wafer having a structure wherein monocrystalline silicon is embedded in polycrystalline silicon that is prepared by the unidirectional solidification/melting method. The longitudinal plane of crystal grains of the polycrystalline portion prepared by the unidirectional solidification/melting method is used as the wafer plane, and the monocrystalline silicon is embedded so that the longitudinal direction of the crystal grains of the polycrystalline portion forms an angle of 120° to 150° relative to the cleaved surface of the monocrystalline silicon. Thus provided is a hybrid silicon wafer comprising the functions of both a polycrystalline silicon wafer and a monocrystalline wafer.

Architectural construct having a plurality of implementations

An architectural construct is a synthetic material that includes a matrix characterization of different crystals. An architectural construct can be configured as a solid mass or as parallel layers that can be on a nano-, micro-, and macro-scale. Its configuration can determine its behavior and functionality under a variety of conditions. Implementations of an architectural construct can include its use as a substrate, sacrificial construct, carrier, filter, sensor, additive, and catalyst for other molecules, compounds, and substances, or may also include a means to store energy and generate power.

Method of semiconductor film stabilization

Embodiments of the invention generally relate to methods for forming silicon-germanium-tin alloy epitaxial layers, germanium-tin alloy epitaxial layers, and germanium epitaxial layers that may be doped with boron, phosphorus, arsenic, or other n-type or p-type dopants. The methods generally include positioning a substrate in a processing chamber. A germanium precursor gas is then introduced into the chamber concurrently with a stressor precursor gas, such as a tin precursor gas, to form an epitaxial layer. The flow of the germanium gas is then halted, and an etchant gas is introduced into the chamber. An etch back is then performed while in the presence of the stressor precursor gas used in the formation of the epitaxial film. The flow of the etchant gas is then stopped, and the cycle may then be repeated. In addition to or as an alternative to the etch back process, an annealing processing may be performed.

Semiconductor Structure and Method

A system and method for providing support to semiconductor wafer is provided. An embodiment comprises introducing a vacancy enhancing material during the formation of a semiconductor ingot prior to the semiconductor wafer being separated from the semiconductor ingot. The vacancy enhancing material forms vacancies at a high density within the semiconductor ingot, and the vacancies form bulk micro defects within the semiconductor wafer during high temperature processes such as annealing. These bulk micro defects help to provide support and strengthen the semiconductor wafer during subsequent processing and helps to reduce or eliminate a fingerprint overlay that may otherwise occur.

Methods for creating a semiconductor wafer having profiled doping and wafers and solar cell components having a profiled field, such as drift and back surface

A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant can not enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.

Synthesis and processing of novel phase of carbon (q-carbon)

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

Synthesis and processing of q-carbon, graphene, and diamond

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

Conversion of boron nitride into n-type and p-type doped cubic boron nitride and structures

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

PRODUCTION OF ROUNDED SALT PARTICLES

The present disclosure generally relates to methods of preparing spherical salt particles for industrial, medical, and other uses. The methods can include combining the angular salt particles with a quantity of finishing media, for example, into a receptacle. Thereafter, the angular salt particles and the finishing media can be moved or agitated until the angular salt particles have a desired sphericity. 1. A method for producing rounded salt particles from angular salt particles , the method comprising combining the angular salt particles with a quantity of finishing media in a receptacle , and moving or agitating the angular salt particles and the finishing media until the angular salt particles have a sphericity of greater than about 0.75.2. The method of claim 1 , wherein the angular salt particles have a particle size in the range of about 100 to about 1200 μm.3. The method of claim 1 , wherein the angular salt particles are selected from the group consisting of sodium chloride claim 1 , potassium chloride claim 1 , calcium carbonate claim 1 , lithium chloride claim 1 , magnesium chloride claim 1 , calcium chloride claim 1 , ammonium chloride claim 1 , sodium iodide claim 1 , potassium iodide claim 1 , lithium iodide claim 1 , magnesium iodide claim 1 , calcium iodide claim 1 , ammonium iodide claim 1 , sodium bromide claim 1 , potassium bromide claim 1 , lithium bromide claim 1 , magnesium bromide claim 1 , calcium bromide claim 1 , ammonium bromide claim 1 , sodium carbonate claim 1 , potassium carbonate claim 1 , lithium carbonate claim 1 , magnesium carbonate claim 1 , ammonium carbonate claim 1 , sodium bicarbonate claim 1 , potassium bicarbonate claim 1 , lithium bicarbonate claim 1 , ammonium bicarbonate claim 1 , sodium nitrate claim 1 , potassium nitrate claim 1 , lithium nitrate claim 1 , magnesium nitrate claim 1 , calcium nitrate claim 1 , ammonium nitrate claim 1 , sodium acetate claim 1 , potassium acetate claim 1 , lithium acetate claim 1 , ...

LITHIUM TANTALATE SINGLE CRYSTAL SUBSTRATE, BONDED SUBSTRATE, MANUFACTURING METHOD OF THE BONDED SUBSTRATE, AND SURFACE ACOUSTIC WAVE DEVICE USING THE BONDED SUBSTRATE

The lithium tantalate single crystal substrate is a rotated Y-cut LiTaOsingle crystal substrate having a crystal orientation of 36° Y-49° Y cut characterized in that: the substrate is diffused with Li from its surface into its depth such that it has a Li concentration profile showing a difference in the Li concentration between the substrate surface and the depth of the substrate; and the substrate is treated with single polarization treatment so that the Li concentration is substantially uniform from the substrate surface to a depth which is equivalent to 5-15 times the wavelength of either a surface acoustic wave or a leaky surface acoustic wave propagating in the LiTaOsubstrate surface. 1. A method of manufacturing a bonded substrate , comprising:{'sub': '3', "bonding a base substrate to a LiTaOsingle crystal substrate which has a concentration profile wherein Li concentration is different between a substrate surface and an inner part of the substrate and wherein Li concentration is substantially uniform in a region ranging from at least one of the substrate's surfaces to a depth; and"}{'sub': '3', 'removing a LiTaOsurface layer opposite the bonding face in a manner such that at least part of said region where the Li concentration is substantially uniform is left.'}2. A method of manufacturing a bonded substrate , comprising:{'sub': '3', "bonding a base substrate to a LiTaOsingle crystal substrate which has a concentration profile wherein Li concentration is different between a substrate surface and an inner part of the substrate and wherein Li concentration is substantially uniform in a region ranging from at least one of the substrate's surfaces to a depth and"}{'sub': '3', 'removing a LiTaOsurface layer opposite the bonding face in a manner such that only said region where the Li concentration is substantially uniform is left.'}3. The method of manufacturing a bonded substrate as claimed in claim 2 , wherein that region in which the Li concentration is ...

Crystal laminate structure

A crystal laminate structure includes a Ga 2 O 3 -based substrate, and a β-Ga 2 O 3 -based single crystal film formed by epitaxial crystal growth on a principal surface of the Ga 2 O 3 -based substrate. The β-Ga 2 O 3 -based single crystal film includes Cl and a dopant doped in parallel with the crystal growth at a concentration of not less than 1×10 13 atoms/cm 3 and not more than 5.0×10 20 atoms/cm 3 .

n-TYPE 4H-SiC SINGLE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING n-TYPE 4H-SiC SINGLE CRYSTAL SUBSTRATE

In an n-type 4H-SiC single crystal substrate of the present disclosure, the concentration of the element N as a donor and the concentration of the element B as an acceptor are both 3×10 18 /cm 3 or more, and a threading dislocation density is less than 4,000/cm 2 .

LITHIUM TANTALATE SINGLE CRYSTAL SUBSTRATE, BONDED SUBSTRATE, MANUFACTURING METHOD OF THE BONDED SUBSTRATE, AND SURFACE ACOUSTIC WAVE DEVICE USING THE BONDED SUBSTRATE

[Object] 1: A rotated Y-cut lithium tantalate (LiTaO) single crystal substrate having a crystal orientation of 36° Y-49° Y cut , wherein said substrate is diffused with Li from its surface into its depth such that it has a Li concentration profile showing a difference in the Li concentration between the substrate surface and the depth of the substrate; and said substrate is treated with single polarization treatment so that the Li concentration is substantially uniform from the substrate surface to a depth which is equivalent to 5-15 times the wavelength of either a surface acoustic wave or a leaky surface acoustic wave propagating in the LiTaOsubstrate surface.2: The lithium tantalate single crystal substrate of claim 1 , wherein said Li concentration profile is one in which the Li concentration is higher at an area closer to the substrate surface of said rotated Y-cut LiTaOsubstrate and is lower at an area closer to the middle of said substrate.3: The lithium tantalate single crystal substrate of claim 1 , wherein a ratio of Li to Ta at the substrate surface is such that Li:Ta=50−α:50+α where α is in the range of −0.5<α<0.5.4: The lithium tantalate single crystal substrate of claim 1 , wherein said substrate is doped with Fe in an amount of 25 ppm-150 ppm.5: A bonded substrate claim 1 , comprising:a base substrate; and{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a lithium tantalate single crystal substrate of , being bonded to said base substrate.'}6: The bonded substrate of claim 5 , wherein a LiTaOsurface layer opposite the bonding face of said lithium tantalate single crystal substrate is removed in a manner such that at least part of said area where the Li concentration is substantially uniform is left.7: The bonded substrate of claim 5 , wherein said base substrate is made of Si claim 5 , SiC or spinel.8: A surface acoustic wave device claim 5 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the lithium tantalate single crystal substrate ...

THERMAL DIFFUSION DOPING OF DIAMOND

Boron-doped diamond and methods for making it are provided. The doped diamond is made using an ultra-thin film of heavily boron-doped silicon as a dopant carrying material in a low temperature thermal diffusion doping process. 1. Boron-doped diamond comprising: a layer of diamond comprising a doped region extending into the layer from a surface , the doped region comprising substitutional boron dopant atoms , wherein the concentration of substitutional boron dopant atoms at the surface is at least 1×10cmand the depth profile of the substitutional boron dopant atoms corresponds to a complimentary-error-function.2. The diamond of claim 1 , wherein the concentration of substitutional boron dopant atoms at the surface is at least 2×10cm.3. The diamond of claim 1 , wherein the concentration of substitutional boron dopant atoms at the surface is at least 2.2×10cm.4. The diamond of claim 1 , wherein the concentration of substitutional boron dopant atoms at a depth of 100 nm from the surface is no greater than 1×10cm.5. The diamond of claim 1 , wherein the concentration of substitutional boron dopant atoms at a depth of 100 nm from the surface is no greater than 1×10cm.6. The diamond of claim 1 , wherein the diamond is free of Si atoms at a depth of 5 nm or greater from the surface.7. The diamond of claim 1 , wherein the surface is free of graphitized diamond.8. The diamond of claim 1 , wherein the diamond is natural diamond.9. The diamond of claim 1 , wherein the diamond comprises type IIa diamond.10. The diamond of claim 1 , wherein the diamond is single-crystalline diamond.11. The diamond of claim 1 , wherein the diamond is single-crystalline diamond claim 1 , the concentration of substitutional boron dopant atoms at the surface is at least 2×10cm claim 1 , and the concentration of substitutional boron dopant atoms at a depth of 100 nm from the surface is no greater than 1×10cm.12. A method of making substitutionally boron-doped diamond claim 1 , the method comprising: ...

EXPOSURE OF A SILICON RIBBON TO GAS IN A FURNACE

A system for producing a ribbon from a melt includes a crucible to contain a melt and a cold block. The cold block has a surface that directly faces an exposed surface of the melt. A ribbon is formed on the melt using the cold block. A furnace is operatively connected to the crucible. The ribbon passes through the furnace after removal from the melt. The furnace includes at least one gas jet. The gas jet can dope the ribbon, form a diffusion barrier on the ribbon, and/or passivate the ribbon. Part of the ribbon passes through the furnace while part of the ribbon is being formed in the crucible using the cold block. 1. A system comprising:a crucible for containing a melt;a cold block having a cold block surface that directly faces an exposed surface of the melt, the cold block configured to generate a cold block temperature at the cold block surface that is lower than a melt temperature of the melt at the exposed surface whereby a ribbon is formed on the melt;a furnace operatively connected to the crucible, wherein the ribbon passes through the furnace after removal from the melt such that part of the ribbon passes through the furnace while part of the ribbon is being formed in the crucible using the cold block, wherein the furnace includes at least one gas jet; anda gas source in fluid communication with the gas jet, wherein the gas source contains a gas that dopes the ribbon, forms a surface oxide or other diffusion barrier on the ribbon, and/or passivates the ribbon.2. The system of claim 1 , wherein the furnace includes a plurality of the gas jets.3. The system of claim 2 , wherein the gas jets are arranged in a plurality of zones separated by a gas curtain claim 2 , wherein each of the zones provides a different gas.4. The system of claim 1 , wherein the gas source is one of a syngas gas source that includes argon and hydrogen claim 1 , a syngas source that includes argon and nitrogen claim 1 , a POClgas source claim 1 , or an oxygen gas source.5. The system of ...

CRYSTAL LAMINATE STRUCTURE

[Problem] To provide a crystal laminate structure having a β-GaObased single crystal film in which a dopant is included throughout the crystal and the concentration of the dopant can be set across a broad range. [Solution] In one embodiment of the present invention, provided is a crystal laminate structure which includes: a GaObased substrate ; and a β-GaObased single crystal film 12 formed by epitaxial crystal growth on a primary face 11 of the GaObased substrate 10 and including Cl and a dopant doped in parallel with the crystal growth at a concentration of 1×10to 5.0×10atoms/cm. 1. A crystal laminate structure , comprising:a Ga2O3-based substrate;a β-Ga2O3-based single crystal epitaxial film grown on a primary plane of the Ga2O3-based substrate;wherein the β-Ga2O3-based single crystal epitaxial film has an electron mobility from 8.98×10 to 1.60×102 cm2/V·s at 25° C.2. The crystal laminate structure claim 1 , according to claim 1 , wherein the β-Ga2O3-based single crystal epitaxial film has a carrier density from 1.2×1018/cm3 to 3.2×1015/cm3.3. The crystal laminate structure claim 1 , according to claim 1 , wherein the β-Ga2O3-based single crystal epitaxial film has a resistivity from 5.96×10-2 Ω·cm to 12.5 Ω·cm. The present application is a continuation application filed under 35 USC § 120 claiming priority to co-pending application U.S. Ser. No. 15/559,167, filed Sep. 18, 2017, which claims priority as a national stage filing under 35 USC § 371 of PCT/JP2016/054620 filed Feb. 17, 2016, the entire contents of each of which are incorporated herein by reference.The invention relates to a crystal laminate structure.Conventionally, a method in which a dopant is added during crystal growth by the MBE (Molecular Beam Epitaxy) method or the EFG (Edge-defined Film-fed Growth) method (see, e.g., PTLs 1 and 2) and a method in which a dopant is added to a grown β-GaO-based single crystal by ion implantation (see, e.g., PTL 3) are known to dope a β-GaO-based single crystal. ...

Silicon single crystal wafer, manufacturing method thereof and method of detecting defects

A silicon single crystal wafer is provided. The silicon single crystal wafer includes an IDP which is divided into an NiG region and an NIDP region, wherein the IDP region is a region where a Cu based defect is not detected, the NiG region is a region where an Ni based defect is detected and the NIPD region is a region where an Ni based defect is not detected.

SILICON EPITAXIAL WAFER AND METHOD OF PRODUCING SILICON EPITAXIAL WAFER

A silicon epitaxial wafer including: a second intermediate epitaxial layer on a silicon substrate produced by being cut from a silicon single crystal ingot grown by the CZ method so as to have a carbon concentration ranging from 3×10to 2×10atoms/cm, a first intermediate epitaxial layer doped with a dopant, and an epitaxial layer of a device forming region stacked on the first intermediate epitaxial layer, and to a method of producing this wafer. Also providing an industrially excellent silicon epitaxial wafer that is produced with a silicon substrate doped with carbon and used as a semiconductor device substrate such as a memory, a logic, or a solid-state image sensor, and a method of producing this silicon epitaxial wafer. 18-. (canceled)9. A silicon epitaxial wafer comprising:{'sup': 16', '17', '3, 'a silicon substrate doped with carbon, the silicon substrate being produced by being cut from a silicon single crystal ingot grown by a Czochralski method so as to have a carbon concentration ranging from 3×10to 2×10atoms/cm;'}a first intermediate epitaxial layer that is doped with a dopant and disposed on the silicon substrate;an epitaxial layer stacked on the first intermediate epitaxial layer, the epitaxial layer being a region at which a device is to be formed; anda second intermediate epitaxial layer disposed between the silicon substrate and the first intermediate epitaxial layer.10. The silicon epitaxial wafer according to claim 9 , wherein the second intermediate epitaxial layer has a thickness ranging from 0.5 μm to 2 μm.11. The silicon epitaxial wafer according to claim 9 , wherein a thickness of the second intermediate epitaxial layer is adjusted depending on an amount of the carbon with which the silicon substrate is doped.12. The silicon epitaxial wafer according to claim 10 , wherein a thickness of the second intermediate epitaxial layer is adjusted depending on an amount of the carbon with which the silicon substrate is doped.13. The silicon epitaxial ...

Screen-printable boron doping paste with simultaneous inhibition of phosphorus diffusion in co-diffusion processes

The present invention relates to a novel printable boron doping paste in the form of a hybrid gel based on precursors of inorganic oxides, preferably of silicon dioxide, aluminium oxide and boron oxide, in the presence of organic polymer particles, where the pastes according to the invention can be used in a simplified process for the production of solar cells, where the hybrid gel according to the invention functions both as doping medium and as diffusion barrier.

METHOD OF MANUFACTURING A SILICON INGOT AND SILICON INGOT

A method of Czochralski growth of a silicon ingot includes melting a mixture of silicon material and an n-type dopant material in a crucible. The silicon ingot is extracted from the molten silicon during an extraction time period. The silicon ingot is doped with additional n-type dopant material during at least one sub-period of the extraction time period. 1. A method of Czochralski growth of a silicon ingot , the method comprising:melting a mixture of silicon material and an n-type dopant material in a crucible;extracting the silicon ingot from the molten silicon during an extraction time period; anddoping the silicon ingot with additional n-type dopant material during at least one sub-period of the extraction time period.2. The method of claim 1 , wherein the additional n-type dopant material is phosphorus.3. The method of claim 1 , wherein the silicon ingot is doped with the additional n-type dopant material by a vapor phase doping technique.4. The method of claim 3 , further comprising controlling inlet of a dopant precursor gas into a reaction chamber including the silicon ingot.5. The method of claim 1 , wherein doping the silicon ingot with the additional n-type dopant material includes melting an n-type dopant source material in the crucible.6. The method of claim 5 , wherein the silicon ingot is doped with the additional n-type dopant material by adjusting a depth of the n-type dopant source material into the molten silicon claim 5 , the n-type dopant source material including the additional n-type dopant material.7. The method of claim 6 , wherein adjusting the depth of the n-type dopant source material dipped into the molten silicon in the crucible includes measuring a weight of the n-type dopant source material.8. The method of claim 5 , wherein the n-type dopant source material is in the shape of one or more rods.9. The method of claim 5 , wherein the n-type dopant source material is made of quartz or silicon carbide doped with the additional n-type ...

BIOTEMPLATED PEROVSKITE NANOMATERIALS

A biotemplated nanomaterial can include a crystalline perovskite. 129-. (canceled)30. A method of making a perovskite nanomaterial comprising:combining an aqueous solution of a biotemplate having affinity for a metal ion and an inorganic precursor of a perovskite material to form an aqueous mixture, andreacting the inorganic precursor and the biotemplate to form the perovskite nanomaterial,wherein the perovskite comprises strontium titanate, bismuth ferrite, sodium tantalate, zirconium oxide/tantalum oxynitride, zirconium tantalum oxynitride, tantalum oxynitride, or zirconium tantalum nitride.31. The method of claim 30 , wherein the biotemplate includes a virus particle.32. The method of claim 31 , wherein the virus particle is an M13 bacteriophage.33. The method of claim 30 , wherein the inorganic precursor comprises a first inorganic ion and a second inorganic ion.34. The method of claim 33 , further comprising forming an ion source including the first inorganic ion and the second inorganic ion before forming the aqueous mixture.35. The method of claim 33 , further comprising adjusting the pH of the aqueous mixture and incubating the aqueous mixture for a predetermined time at a predetermined temperature.36. The method of claim 33 , further comprising incubating the aqueous mixture and then calcining the reaction products.37. A method of making a perovskite nanomaterial comprising:combining an aqueous solution of a biotemplate having affinity for a metal ion and an inorganic precursor of a perovskite material to form an aqueous mixture, andreacting the inorganic precursor and the biotemplate to form the perovskite nanomaterial, {'br': None, 'sub': x', '1-x', 'y', '1-y', '3±δ, 'AA′BB′O\u2003\u2003(I)'}, 'wherein the perovskite has the formula (I)whereineach of A and A′, independently, are selected from the group consisting of Mg, Pb, and Bi;each of B and B′, independently, are selected from the group consisting of Zr, V, Nb, Mn, Fe, Ru, Rh, Ni, Pd, Pt, Al, and Mg;x ...

System and Method for Increasing III-Nitride Semiconductor Growth Rate and Reducing Damaging Ion Flux

Systems and methods are disclosed for rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 μm/hour can be achieved. 1. A plasma assisted MBE system comprising:a growth chamber having a substrate;a remote plasma chamber; anda gas-conductance barrier separating the plasma chamber from the growth chamber;{'sub': g', 'p', 'g', 'P, 'wherein the growth chamber has a pressure P, and the plasma chamber has a pressure P, and the gas conductance barrier allows the pressure Pto be lower that P.'}2. The system of claim 1 , wherein Pis at least 0.1 mTorr.34.-. (canceled)5. The system of claim 1 , wherein Pis at least 100 mTorr.6. The system of claim 1 , wherein Pis less than about 0.1 mTorr.78.-. (canceled)9. The system of claim 1 , wherein the plasma chamber contains plasma comprising nitrogen and an inert gas mixture; andwherein the system is configured such that the nitrogen gas flow of the plasma is at least 3 sccm based on a 2 inch diameter substrate.1114.-. (canceled)15. The system of claim 9 , wherein the nitrogen to inert gas ratio is 1:20 to 20:1.16. The system of claim 9 , wherein the nitrogen to inert gas ratio is 1:1 to 10:117. The system of claim 9 , wherein the system is configured such that the gas-conductance barrier has a conductance value of at least about 5 L/s.1823.-. (canceled)24. A method for growing Group III metal nitrides comprising:flowing a plasma from a remote plasma chamber through a gas-conductance barrier and into a growth chamber; andgrowing a group III metal nitride product on a substrate in the growth chamber.25. The method of claim 57 , wherein the plasma comprises a combination of nitrogen and an inert gas selected from the group consisting of neon claim 57 , argon and xenon.26. The method of claim 25 , wherein the nitrogen gas flow of the ...

Extreme large grain (1 mm) lateral growth of cd(se,te) alloy thin films by reactive anneals

Disclosed herein are compositions and methods for making polycrystalline thin films having very large grains sizes and exhibiting improved properties over existing thin films.

SYSTEM AND METHOD FOR INCREASING GROUP III-NITRIDE SEMICONDUCTOR GROWTH RATE AND REDUCING DAMAGING ION FLUX

Systems and methods for the rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 μm/hour can be achieved. 1. A vacuum deposition method for growing a semiconductor material comprising:depositing semiconductor material on a substrate; andgrowing the thickness of the semiconductor material at a growth rate of greater than 3 μm/hour.2. The method of claim 1 , wherein the growth rate is greater than 4 μm/hour.3. The method of claim 1 , wherein the growth rate is greater than 8 μm/hour.4. The method of further comprising flowing a plasma though a gas-conductance barrier;wherein growing the thickness of the semiconductor material occurs downstream of the gas-conductance barrier.5. The method of further comprising:generating a plasma upstream of a gas-conductance barrier; andflowing the plasma though the gas-conductance barrier;wherein growing the thickness of the semiconductor material occurs downstream of the gas-conductance barrier.6. The method of further comprising flowing a plasma from a plasma chamber claim 1 , though a gas-conductance barrier claim 1 , and into a growth chamber;wherein the semiconductor material is a group III metal nitride product;wherein the group III metal nitride product is grown in the growth chamber;{'sub': g', 'P, 'wherein the gas conductance barrier has a conductance C such that the growth chamber pressure Pis lower than the plasma chamber pressure P; and'}{'sub': 'P', 'wherein Pis at least 1 mTorr.'}7. The method of claim 6 , wherein Pis at least 10 mTorr.8. The method of claim 6 , wherein Pis at least 100 mTorr.9. The method of claim 6 , wherein the plasma comprises nitrogen.10. The method of claim 6 , wherein the plasma comprises nitrogen and argon.11. The method of further comprising:flowing a plasma from a plasma chamber, though a gas- ...

METHOD FOR MANUFACTURING SUBSTRATE FOR SOLAR CELL AND SUBSTRATE FOR SOLAR CELL

A solar cell includes a light-receiving surface electrode formed on a light-receiving surface, a back surface electrode formed on a backside, and a CZ silicon single crystal substrate doped with gallium. The CZ silicon single crystal substrate contains 12 ppm or more oxygen atoms. A spiral oxygen-induced defect is not observed in an EL (electroluminescence) image of the solar cell. 1. A solar cell comprising a light-receiving surface electrode formed on a light-receiving surface , a back surface electrode formed on a backside , and a CZ silicon single crystal substrate doped with gallium ,wherein the CZ silicon single crystal substrate contains 12 ppm or more oxygen atoms, anda spiral oxygen-induced defect is not observed in an EL (electroluminescence) image of the solar cell.2. The solar cell according to claim 1 , wherein the CZ silicon single crystal substrate contains 17 to 18 ppm oxygen atoms.3. The solar cell according to claim 1 , comprising a light-receiving surface antireflection coating and an emitter layer on the light-receiving surface claim 1 , anda back surface antireflection coating and a BSF layer on the backside,wherein the light-receiving surface electrode is electrically connected with the emitter layer passing through the light-receiving surface antireflection coating, andthe back surface electrode is electrically connected with the BSF layer passing through the back surface antireflection coating.4. The solar cell according to claim 2 , comprising a light-receiving surface antireflection coating and an emitter layer on the light-receiving surface claim 2 , anda back surface antireflection coating and a BSF layer on the backside,wherein the light-receiving surface electrode is electrically connected with the emitter layer passing through the light-receiving surface antireflection coating, andthe back surface electrode is electrically connected with the BSF layer passing through the back surface antireflection coating.5. The solar cell according ...

Method and system for mutliline mir-ir laser

A method of performing spatial separation of different wavelengths in a single laser cavity includes generating, from a pump radiation source, pump radiations in spatially separate channels and focusing the generated pump radiations in the spatially separate channels towards an active gain medium having amplification spectra. The method also includes emitting from the active gain medium, amplified radiations of the spatially separate channels, each channel of the spatially separate channels representing a corresponding wavelength and focusing the emitted amplified radiations of the spatially separated channels towards an aperture. The method further includes suppressing, at the aperture, an off-axis mode of the amplified radiations of the spatially separate channels, diffracting the amplified radiations of the spatially separate channels received through the aperture to provide diffracted radiations and returning a portion of the diffracted radiations back to the aperture, and collimating the diffracted radiations of the spatially separate channel.

METHODS FOR ATOM INCORPORATION INTO MATERIALS USING A PLASMA AFTERGLOW

There are provided non-destructive methods for incorporating an atom such as N into a material such as graphene. The methods can comprise subjecting a gas comprising the atom to conditions to obtain a flowing plasma afterglow then exposing the material to the flowing plasma afterglow. There are also provided materials such as N-doped graphene produced by such methods. 1. A method for atom incorporation into a material , comprising:subjecting a gas comprising said atom to conditions to obtain a flowing plasma afterglow; andexposing said material to said flowing plasma afterglow.2. The method of claim 1 , wherein said gas is subjected to an electromagnetic field in the microwave regime to obtain a high-density plasma with a flowing plasma afterglow.3. The method of claim 2 , wherein said electromagnetic field claim 2 , has a frequency of about 433 MHz to about 3 GHz.45-. (canceled)6. The method of claim 1 , wherein said atom incorporated into said material is N claim 1 , O claim 1 , B claim 1 , H or mixtures thereof and said gas comprises N claim 1 , O claim 1 , BH claim 1 , Hor mixtures thereof claim 1 , respectively.7. The method of claim 1 , wherein said atom incorporated into said material is a mixture of N and O and said gas consists essentially of a mixture of Nand O.8. The method of claim 1 , wherein said atom incorporated into said material is N and said gas consists essentially of N.911-. (canceled)12. The method of claim 1 , wherein said method is carried out at a total gas pressure of from about 1 Torr to about 20 Torr.13. (canceled)14. The method of claim 1 , wherein said flowing plasma afterglow is a late afterglow.15. The method of claim 1 , wherein said flowing plasma afterglow has a positive ion density of about 10cmto about 10cm.1622-. (canceled)23. The method of claim 1 , wherein said material comprises graphene claim 1 , a nanomaterial claim 1 , a metal surface claim 1 , a crystal surface claim 1 , a polymer or a combination thereof.24. (canceled)25 ...

LIQUID DOPING MEDIA FOR THE LOCAL DOPING OF SILICON WAFERS

The present invention relates to a novel process for the preparation of printable, low-viscosity oxide media, and to the use thereof in the production of solar cells. 1. Process for the preparation of printable , low-viscosity oxide media in the form of doping media , characterised in that an anhydrous sol-gel-based synthesis is carried out by condensation of alkoxysilanes and/or alkoxyalkylsilanes with symmetrical and asymmetrical carboxylic anhydridesi. in the presence of boron-containing compounds and/orii. in the presence of phosphorus-containing compounds and low-viscosity doping media (doping inks) are prepared by controlled gelling.2. Process according to claim 1 , where the alkoxysilanes and/or alkoxyalkylsilanes used contain individual or different saturated or unsaturated claim 1 , branched or unbranched claim 1 , aliphatic claim 1 , alicyclic or aromatic radicals claim 1 , which may in turn be functionalised at any desired position of the alkoxide and/or alkyl radical by heteroatoms selected from the group O claim 1 , N claim 1 , S claim 1 , Cl claim 1 , Br.3. Process according to claim 1 , where the boron-containing compounds are selected from the group boron oxide claim 1 , boric acid and boric acid esters.4. Process according to claim 1 , where the phosphorus-containing compounds are selected from the group phosphorus(V) oxide claim 1 , phosphoric acid claim 1 , polyphosphoric acid claim 1 , phosphoric acid esters and phosphonic acid esters containing siloxane-functionalised groups in the alpha- and beta-position.5. Process according to claim 1 , characterised in that the carboxylic anhydrides used are anhydrides from the group acetic anhydride claim 1 , ethyl formate (anhydride of formic and acetic acid) claim 1 , propionic anhydride claim 1 , succinic anhydride claim 1 , maleic anhydride claim 1 , sorbic anhydride claim 1 , phthalic anhydride and benzoic anhydride.6. Process according to claim 1 , characterised in that the printable oxide media are ...

N-Type Aluminum Nitride Monocrystalline Substrate

A silicon-doped n-type aluminum nitride monocrystalline substrate wherein, at a photoluminescence measurement at 23° C., a ratio (I1/I2) between the emission spectrum intensity (I1) having a peak within 370 to 390 nm and the emission peak intensity (I2) of the band edge of aluminum nitride is 0.5 or less; a thickness is from 25 to 500 μm; and a ratio (electron concentration/silicon concentration) between the electron concentration and the silicon concentration at 23° C. is from 0.0005 to 0.001.

Lithium ion Battery Cell With Single Crystal Li+- Intercalated Titanium Dioxide As An Anode Material

A nonaqueous battery cell includes a casing, a negative electrode provided in the casing, the negative electrode including lithium ions intercalated into a single crystal of a titanium dioxide (TiO), in the rutile phase, with concentration on the order of 10cm, a positive electrode provided in the casing, a separator separating the negative electrode from the positive electrode, and an electrolyte disposed in the casing. 1. A method of manufacturing an electrode material to be used in a electrochemical battery , said method comprising the steps of:{'sub': '2', '(a) burying a titanium dioxide (TiO) crystal into a lithium hydroxide powder;'}(b) heating, in a furnace, said titanium dioxide buried in said lithium hydroxide powder; and{'sub': '2', '(c) isolating a single lithium ion within each “C”-axis channel aligned along the crystallographic direction of said single TiOcrystal.'}2. The method of claim 1 , wherein the step (b) includes the step of heating said TiOburied in said lithium hydroxide powder at a temperature between 425° C. and 475° C. for a duration of between 19 and 25 hours and at an atmospheric pressure of about 1 atmosphere (atm).3. The method of claim 1 , wherein the step (a) includes the step of burying only a single TiOcrystal in a rutile phase.4. The method of claim 3 , wherein step (b) includes the step of diffusing lithium ions into channels aligned along a crystallographic direction of said single TiOcrystal.5. The method of claim 3 , wherein the step (b) includes the step of producing Liconcentrations in said electrode on the order of between 5×10cmand 1×10cm.6. The method of claim 1 , wherein the step (b) comprises the step of heating said TiOburied in said lithium hydroxide powder at an ambient pressure being greater than an atmospheric pressure.7. The method of claim 1 , further comprising the step of providing said TiOin a rutile crystal form and intentionally doping said TiOcrystal claim 1 , during growth thereof claim 1 , with transition ...

ULTRA-HIGH DENSITY SINGLE-WALLED CARBON NANOTUBE HORIZONTAL ARRAY AND ITS CONTROLLABLE PREPARATION METHOD

The present invention discloses single-walled carbon nanotubes horizontal arrays with ultra-high density and the preparation method. The method comprises the following steps: loading a catalyst on a single crystal growth substrate; after annealing, introducing hydrogen into a chemical vapor deposition system to conduct a reduction reaction of the catalyst; and maintaining the introduction of the hydrogen to conduct the orientated growth of a single-walled carbon nanotube. The density of the ultra-high density single-walled carbon nanotube horizontal array obtained by this method exceeds 130 tubes/micrometer, and an electrical performance test is performed on the prepared ultra-high density single-walled carbon nanotube horizontal array shows a high on-current density of 380 μA/μm, and the transconductance of 102.5 μS/μm. 1. A method for preparing ultra-high density single-walled carbon nanotube horizontal array , comprising the following steps:loading a catalyst on a single crystal growth substrate; after annealing, introducing hydrogen into a chemical vapor deposition system to conduct a reduction reaction of the catalyst; and maintaining the introduction of the hydrogen to conduct an orientated growth of the single-walled carbon nanotubes, then after the growth, the ultra-high density single-walled carbon nanotube horizontal array is directly obtained on the single crystal growth substrate.2. The method of claim 1 , wherein a material constituting the single crystal growth substrate is ST-cut quartz claim 1 , R-cut quartz claim 1 , a-plane α alumina claim 1 , r-plane α alumina or magnesium oxide;the catalyst is selected from a metal nanoparticle, wherein a metal element in the metal nanoparticle is selected from at least one of Fe, Co, Ni, Cu, Au, Mo, W, Ru, Rh, and Pd; the particle size of the catalyst is 1 nm-3 nm.3. The method of claim 1 , further comprising claim 1 , conducting a pretreatment of the single crystal growth substrate before loading the catalyst; ...

BORON-DOPED COPPER CATALYSTS FOR EFFICIENT CONVERSION OF CO2 TO MULTI-CARBON HYDROCARBONS AND ASSOCIATED METHODS

The invention relates to a catalyst system for catalyzing conversion of carbon dioxide into multi-carbon compounds comprising a boron-doped copper catalytic material and associated methods. 123-. (canceled)24. A catalyst system for catalyzing conversion of carbon dioxide (CO) into multi-carbon compounds , the catalyst system characterized in that the catalyst system comprises a boron-doped copper catalytic material , wherein the boron-doped copper catalytic material has a boron concentration that decreases with depth into the material , and further wherein the boron-doped copper catalytic material has a boron concentration of about 4-7 mol % proximate at the external surface of the catalyst and has a boron concentration below about 4 mol % beyond a depth of about 7 nm from the external surface; the boron concentration determined by Inductively coupled plasma optical emission spectrometry.25. The catalyst system of claim 24 , characterized in that the boron-doped copper catalytic material has a porous dendritic morphology.26. The catalyst system of claim 24 , characterized in that the boron-doped copper catalytic material has a particle size ranging from 30 to 40 nm as determined by scanning electron microscopy.27. The catalyst system of claim 24 , characterized in that the copper comprises Cu (111).28. The catalyst system of claim 24 , characterized in that the catalyst system further comprises:a gas-diffusion layer; anda catalyst layer comprising the boron-doped copper catalytic material applied to the gas-diffusion layer.29. A method to produce the boron-doped copper catalytic material for a catalyst system according to claim 24 , characterized in that the copper comprises Cu (111); and in that the boron-doped copper catalytic material is prepared via incipient wetness impregnation of a single crystal Cu (111) material with a boric acid aqueous solution.30. The method of claim 29 , characterized in that the impregnation step is followed by a calcination step.31. A ...

Template for Epitaxial Growth, Method for Producing the Same, and Nitride Semiconductor Device

The present invention provides a method for producing a template for epitaxial growth, the method including: a surface treatment step of dispersing Ga atoms on a surface of a sapphire substrate; and an AlN growth step of epitaxially growing an AlN layer on the sapphire substrate, wherein in a Ga concentration distribution in a depth direction perpendicular to the surface of the sapphire substrate in an internal region of the AlN layer excluding a near-surface region up to a depth of 100 nm from the surface of the AlN layer, which is obtained by secondary ion mass spectrometry, a position in the depth direction where the Ga concentration takes the maximum value is present in a near-interface region located between the interface of the sapphire substrate and a position at 400 nm spaced apart from the interface to the AlN layer side, and the maximum value of the Ga concentration is 3×10atoms/cmor more and 2×10atoms/cmor less. 1. A method for producing a template having an AlN layer on a surface of a sapphire substrate and used as an underlayer for epitaxially growing a GaN-family compound semiconductor layer , the method comprising:a surface treatment step of dispersing Ga atoms on a surface of a sapphire substrate; andan AlN growth step of epitaxially growing an AlN layer on the sapphire substrate,wherein in a Ga concentration distribution in a depth direction perpendicular to the surface of the sapphire substrate in an internal region of the AlN layer excluding a near-surface region up to a depth of 100 nm from the surface of the AlN layer, which is obtained by secondary ion mass spectrometry,a position in the depth direction where the Ga concentration takes the maximum value is present in a near-interface region located between the interface of the sapphire substrate and a position at 400 nm spaced apart from the interface to the AlN layer side, and{'sup': 17', '3', '20', '3, 'the maximum value of the Ga concentration is 3×10atoms/cmor more and 2×10atoms/cmor less ...

METHOD AND STRUCTURE OF SINGLE CRYSTAL ELECTRONIC DEVICES WITH ENHANCED STRAIN INTERFACE REGIONS BY IMPURITY INTRODUCTION

A method of manufacture and resulting structure for a single crystal electronic device with an enhanced strain interface region. The method of manufacture can include forming a nucleation layer overlying a substrate and forming a first and second single crystal layer overlying the nucleation layer. This first and second layers can be doped by introducing one or more impurity species to form a strained single crystal layers. The first and second strained layers can be aligned along the same crystallographic direction to form a strained single crystal bi-layer having an enhanced strain interface region. Using this enhanced single crystal bi-layer to form active or passive devices results in improved physical characteristics, such as enhanced photon velocity or improved density charges. 1. A method for fabricating a single crystal electronic device , the method comprising:providing a substrate having a substrate surface region;forming a nucleation layer overlying the substrate surface region and being characterized by nucleation growth parameters; andforming a first single crystal piezoelectric layer overlying the nucleation layer;doping the first single crystal piezoelectric layer by introducing one or more impurity species including scandium (Sc) to form a first strained single crystal piezoelectric layer;wherein the first strained single crystal piezoelectric layer is characterized by a first strain condition and first piezoelectric layer parameters;forming a second single crystal piezoelectric layer overlying the first single crystal piezoelectric layer; anddoping the second single crystal piezoelectric layer by introducing one or more impurity species including scandium (Sc) to form a second strained single crystal piezoelectric layer;wherein the second strained single crystal piezoelectric layer is characterized by a second strain condition and second piezoelectric layer parameters;wherein the first strained single crystal piezoelectric layer and the second ...

THERMAL DIFFUSION DOPING OF DIAMOND

Boron-doped diamond and methods for making it are provided. The doped diamond is made using an ultra-thin film of heavily boron-doped silicon as a dopant carrying material in a low temperature thermal diffusion doping process. 1. A method of making substitutionally boron-doped diamond , the method comprising:bonding a flexible, boron-doped, single-crystalline silicon nanomembrane to the surface of a layer of diamond; andannealing the diamond and the boron-doped, single-crystalline silicon nanomembrane for a time sufficient to allow boron dopant atoms from the boron-doped, single-crystalline silicon nanomembrane to diffuse into the layer of diamond to form a doped region in the diamond.2. The method of claim 1 , wherein annealing the diamond and the boron-doped claim 1 , single-crystalline silicon nanomembrane comprises annealing the diamond and the boron-doped claim 1 , single-crystalline silicon nanomembrane at a temperature of at least 700° C.3. The method of claim 1 , wherein the concentration of boron dopant atoms at the surface of the layer of diamond after annealing is at least 1×10cm.4. The method of claim 1 , wherein the concentration of boron dopant atoms at the surface of the layer of diamond after annealing is at least 1×10cm.5. The method of claim 1 , wherein the concentration of boron dopant atoms at the surface of the layer of diamond after annealing is at least 2×10cm.6. The method of claim 1 , wherein the annealing temperature is no greater than about 1000° C.7. The method of claim 1 , wherein the boron dopant atom concentration in the boron-doped claim 1 , single-crystalline silicon nanomembrane is at least 1×10cmat the surface of the boron-doped claim 1 , single-crystalline silicon nanomembrane that is bonded to the surface of the layer of diamond.8. The method of claim 1 , wherein the boron dopant atom concentration in the boron-doped claim 1 , single-crystalline silicon nanomembrane is at least 1×10cmat the surface of the boron-doped claim 1 , ...

Silicon single crystal wafer, manufacturing method thereof and method of detecting defects

A silicon single crystal wafer is provided. The silicon single crystal wafer includes an IDP which is divided into an NiG region and an NIDP region, wherein the IDP region is a region where a Cu based defect is not detected, the NiG region is a region where an Ni based defect is detected and the NIPD region is a region where an Ni based defect is not detected.

COMPOSITION COMPRISING AN ENGINEERED DEFECT CONCENTRATION

A composition comprising an engineered defect concentration comprises a metal oxide single crystal having a polar surface and a bulk concentration of interstitial oxygen (O) of at least about 10atoms/cm. The polar surface comprises a concentration of impurity species of about 5% or less of a monolayer. A method of engineering a defect concentration in a single crystal comprises exposing a metal oxide single crystal having a polar surface to molecular oxygen at a temperature of about 850° C. or less, and injecting atomic oxygen into the single crystal at an effective diffusion rate Dof at least about 10cm/s. 1. A composition comprising an engineered defect concentration , the composition comprising:{'sub': 'i', 'sup': 14', '3, 'a metal oxide single crystal comprising a polar surface and having a bulk concentration of interstitial oxygen (O) of at least about 10atoms/cm,'}wherein the polar surface comprises a concentration of impurity species of about 5% or less of a monolayer.2. The composition of claim 1 , wherein the concentration of impurity species is about 1% or less of a monolayer.3. The composition of claim 1 , wherein the metal oxide single crystal comprises ZnO claim 1 , NiO claim 1 , LiCoO claim 1 , KTaO claim 1 , or SrTiO.4. The composition of claim 1 , wherein the polar surface is cation-terminated.5. The composition of claim 1 , wherein the polar surface is anion-terminated.6. The composition of claim 1 , wherein the metal oxide single crystal comprises at least one linear dimension of about 100 nm or less claim 1 , the metal oxide single crystal being nanostructured.7. The composition of comprising claim 1 , when exposed to molecular oxygen at an elevated temperature claim 1 , an oxygen diffusion profile having an exponential shape.8. The composition of claim 7 , wherein the oxygen diffusion profile comprises a near-surface pile-up region comprising an increased concentration of the interstitial oxygen (O) claim 7 , the near-surface pile-up region being ...

Silicon carbide substrate, semiconductor device, and methods for manufacturing them

A silicon carbide substrate has a first main surface, and a second main surface opposite to the first main surface. A region including at least one main surface of the first and second main surfaces is made of single-crystal silicon carbide. In the one main surface, sulfur atoms are present at not less than 60×10 10 atoms/cm 2 and not more than 2000×10 10 atoms/cm 2 , and carbon atoms as an impurity are present at not less than 3 at % and not more than 25 at %. Thereby, a silicon carbide substrate having a stable surface, a semiconductor device using the substrate, and methods for manufacturing them can be provided.

PRODUCTION OF ROUNDED SALT PARTICLES

The present disclosure generally relates to methods of preparing spherical salt particles for industrial, medical, and other uses. The methods can include combining the angular salt particles with a quantity of finishing media, for example, into a receptacle. Thereafter, the angular salt particles and the finishing media can be moved or agitated until the angular salt particles have a desired sphericity. 1. A method for producing rounded salt particles from angular salt particles , the method comprising:providing a quantity of angular salt particles;providing a quantity of finishing media; andmoving the angular salt particles and the finishing media against each other to cause contact therebetween until the angular salt particles become rounded to a predetermined sphericity.2. The method of claim 1 , further comprising claim 1 , prior to the moving claim 1 , sieving angular salt particles to produce the quantity of angular salt particles having a predetermined particle size.3. The method claim 1 , wherein the angular salt particles have a particle size in the range of about 100 to about 1200 μm.4. The method of claim 1 , wherein the angular salt particles have a particle size in the range of about 400 to about 800 μm.5. The method of claim 1 , wherein the angular salt particles are selected from sodium chloride claim 1 , potassium chloride claim 1 , calcium carbonate claim 1 , or combinations thereof.6. The method of claim 5 , wherein the angular salt particles are sodium chloride salt particles.7. The method of claim 1 , wherein the finishing media is a material selected from the group consisting of a ceramic claim 1 , a mineral claim 1 , a metal claim 1 , an alloy claim 1 , a glass claim 1 , a plastic claim 1 , and a polymer.8. The method of claim 7 , wherein the finishing media comprises a ceramic.9. The method of claim 8 , wherein the ceramic is porcelain.10. The method of claim 1 , wherein the finishing media is in a particulate form having a particle size in ...

SYNTHESIS AND PROCESSING OF PURE AND NV NANODIAMONDS AND OTHER NANOSTRUCTURES FOR QUANTUM COMPUTING AND MAGNETIC SENSING APPLICATIONS

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting amorphous carbon doped with nitrogen and carbon-13 into an undercooled state followed by quenching. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. 1. A quantum computer comprising:a quantum register with a size of at least two qubits, each of the at least two qubits comprising a different one of a plurality of NV-doped nanodiamonds deterministically placed on a substrate;each of the plurality of NV-doped nanodiamonds comprising one NV center and one carbon-13 atom;each of the plurality of NV-doped nanodiamonds being epitaxial with the substrate, the substrate being planar matching with diamond; and{'sup': −', '0, 'each of the plurality of NV-doped nanodiamonds having sharp transitions between NV and NV.'}2. The quantum computer of claim 1 , wherein the transitions are controllable electrically by current and/or optically by laser illumination.3. The structure of claim 1 , wherein the plurality of NV-doped diamonds have a same orientation.4. A structure comprising:a substrate; anda plurality of NV-doped diamonds deterministically placed on the substrate, each of the plurality NV-doped diamonds comprising an NV center and a carbon-13 atom.5. The structure of claim 4 , wherein the plurality of NV-doped diamonds have a same orientation.6. The structure of claim 4 ,wherein the plurality of NV-doped diamonds are epitaxial with the substrate; andwherein the substrate is planar matching with diamond.7. The structure of claim 4 , wherein the plurality of NV-doped diamonds has concentrations of NV-dopants that exceed thermodynamic solubility limits claim 4 , the NV-dopants comprising carbon-13.8. The structure of claim 4 , wherein each of the plurality of NV-doped diamonds comprises one NV center and one carbon-13 atom.9. The structure of claim 4 , wherein each of the NV-doped diamonds has ...

LARGE-SCALE SYNTHESIS OF 2D SEMICONDUCTORS BY EPITAXIAL PHASE CONVERSION

There is a method for forming an oxide or chalcogenide 2D semiconductor. The method includes a step of growing on a substrate, by a deposition method, a precursor epitaxy oxide or chalcogenide film; and a step of sulfurizing the precursor epitaxy oxide or chalcogenide film, by replacing the oxygen atoms with sulfur atoms, to obtain the oxide or chalcogenide 2D semiconductor. The oxide or chalcogenide 2D semiconductor has an epitaxy structure inherent from the precursor epitaxy oxide or chalcogenide film. 1. A method for forming an oxide or chalcogenide 2D semiconductor , the method comprising:growing on a substrate, by a deposition method, a precursor epitaxy oxide or chalcogenide film; andsulfurizing the precursor epitaxy oxide or chalcogenide film, by replacing the oxygen atoms with sulfur atoms, to obtain the oxide or chalcogenide 2D semiconductor,wherein the oxide or chalcogenide 2D semiconductor has an epitaxy structure inherent from the precursor epitaxy oxide or chalcogenide film.2. The method of claim 1 , wherein the precursor epitaxy oxide or chalcogenide film is a precursor single crystal MoOfilm claim 1 , the oxide or chalcogenide 2D semiconductor is a MoSsemiconductor claim 1 , and the deposition method is one of pulse laser deposition claim 1 , metalorganic vapor phase epitaxy or molecular beam epitaxy.3. The method of claim 2 , further comprising:providing the substrate inside a chamber of a pulse laser deposition (PLD) system;placing a target material on a target support underneath the substrate with a certain distance inside the PLD chamber; andirradiating with a laser beam the target material to ablate atoms of the target material,{'sub': '2', 'wherein the ablated atoms travel to the substrate and form the precursor single crystal MoOfilm.'}4. The method of claim 3 , wherein the target material is MoO.5. The method of claim 3 , wherein the substrate is located above the target support.6. The method of claim 3 , wherein the substrate and the target ...

METHOD OF MANUFACTURING AN OXIDE SINGLE CRYSTAL SUBSTRATE FOR A SURFACE ACOUSTIC WAVE DEVICE

[Object] 1. A method of manufacturing an oxide single crystal substrate for a surface acoustic wave device characterized by comprising steps of preparing a slurry by dispersing a powder containing a Li compound in a medium , applying said slurry to an oxide single crystal substrate , and heating said substrate with the slurry on it whereby said substrate is modified as Li is diffused into the substrate from the surface thereof.2. A method of manufacturing an oxide single crystal substrate for a surface acoustic wave device characterized by comprising steps of preparing a slurry by dispersing a powder containing a Li compound in a medium , applying said slurry to an oxide single crystal substrate , burying said oxide single crystal substrate with said slurry in a powder containing a Li compound same as the said Li compound , and heating said substrate whereby said substrate is modified as Li is diffused into the substrate from the surface thereof.3. A method of manufacturing an oxide single crystal substrate for a surface acoustic wave device characterized by comprising steps of preparing a slurry by dispersing a powder containing a Li compound in a medium , applying said slurry to a surface of an oxide single crystal substrate cut from an oxide single crystal ingot having a roughly congruent composition which has been subjected to single polarization treatment , burying said oxide single crystal substrate with said slurry in a powder containing a Li compound same as said Li compound , and heating said substrate to thereby modify it through diffusion of Li into said substrate from the surface thereof in a manner such that a profile of Li concentration occurs wherein the greater the depth is , the lower the Li concentration is.4. The method of manufacturing an oxide single crystal substrate for a surface acoustic wave device as claimed in claim 1 , wherein the powder containing the Li compound to be dispersed in the medium has an average particle size of 0.001 through ...

Doping of particulate semiconductor materials

The invention relates to a method of doping semiconductor material. Essentially, the method comprises mixing a quantity of particulate semiconductor material with an ionic salt or a preparation of ionic salts. Preferably, the particulate semiconductor material comprises nanoparticles with a size in the range 1 nm to 100 μm. Most preferably, the particle size is in the range from 50 nm to 500 nm. Preferred semiconductor materials are intrinsic and metallurgical grade silicon. The invention extends to a printable composition comprising the doped semiconductor material as well as a binder and a solvent. The invention also extends to a semiconductor device formed from layers of the printable composition having p and n type properties.

碳化硅衬底、半导体器件及其制造方法

一种碳化硅衬底(1)具有第一主面(1A)和面对第一主面(1A)的第二主面(1B)。包含第一主面(1A)和第二主面(1B)中的至少一个的区域包括单晶碳化硅。在该主面中的一个上，硫原子以60×10 10 原子/cm 2 到2000×10 10 原子/cm 2 的范围存在，作为杂质的碳原子以3at％到25at％的范围存在。由此，可以提供具有稳定表面的碳化硅衬底、使用该碳化硅衬底的半导体器件及其制造方法。

有機導電体結晶の製造方法

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Diffusion system

Provided is a diffusion system for forming a doping layer in a wafer. The diffusion system includes a bubbler for generating a doping gas; a premixer, which premixes the doping gas with reactive gases and preheats the gas mixture; a main chamber, in which the gas mixture reacts to the wafer; a buffer case, which externally isolates an exhaust port and a door for loading and unloading the wafer into and out or the main chamber; and a used gas exhaustion system, which exhausts a used gas after the reaction is finished in the main chamber.

Low temperature load and bake

TiO2-xNx nanotubes by selective doping of atomic nitrogen states and method for preparing the same

본 발명은 TiO 2 - x N x (0.01≤x≤0.2) 나노튜브 및 그의 제조방법에 관한 것으로, 보다 상세하게는 질소 가스로 형성된 플라즈마를 이용하여 TiO 2 나노튜브를 처리함으로써 TiO 2 구조에서 산소를 부분적으로 질소로 치환하는 공정에 의하여 질소를 원자 단위로 도핑하는 TiO 2-x N x 나노튜브의 제조방법에 관한 것이다. The present invention relates to TiO 2 - x N x (0.01≤x≤0.2) nanotubes and a method of manufacturing the same, and more particularly, oxygen in TiO 2 structure by treating TiO 2 nanotubes using a plasma formed of nitrogen gas. It relates to a method for producing TiO 2-x N x nanotubes doped with nitrogen on an atomic basis by a step of partially substituted with nitrogen. 본 발명은 TiO 2 나노튜브에 질소가 도핑됨으로써 전자구조가 조절되어 밴드갭(band gap)이 감소함으로 인하여 전도성이 향상되고 광흡수 영역 또한 자외선에서 가시광선 영역으로 확장되어 광, 전기 화학적으로 보다 향상된 응용 성능을 갖는 TiO 2 - x N x 나노튜브를 제공한다. According to the present invention, the doping of nitrogen into TiO 2 nanotubes regulates the electronic structure, thereby reducing the band gap, thereby improving conductivity, and the light absorption region also extends from the ultraviolet to the visible region. Provide TiO 2 - x N x nanotubes with application performance. 이산화티타늄(TiO2) 나노튜브, 플라즈마, 질소 도핑, TiO2-xNx 나노튜브 Titanium Dioxide (TiO2) Nanotubes, Plasma, Nitrogen Doping, TiO2-xNx Nanotubes

Heat-treatment apparatus

요약없슴 No summary

N-type aluminum nitride monocrystalline substrate

本发明的目的在于提供一种掺杂硅的、高性能的n型氮化铝单晶基板。该n型氮化铝单晶基板掺杂有硅，在23℃时的光致发光测定中，在370～390nm处具有峰的发光光谱强度(I 1 )与氮化铝的带边的发光峰强度(I 2 )之比(I 1 /I 2 )是0.5以下，厚度是25～500μm，23℃时的电子浓度与硅浓度之比(电子浓度/硅浓度)是0.0005～0.001。

GaP nanowire and preparation method and application thereof

本发明提供了一种GaP纳米线及其制备方法和用途。GaP纳米线的制备方法为：1)在导电基底上覆盖催化剂；2)将GaP粉末装入容器中；3)将导电基底和容器置于两端开口的石英管两侧，放到双温区管式炉中；4)对双温区管式炉抽真空，通保护气，加热，使第一温区升温至930℃‑1000℃，第二温区升温至620℃‑650℃，保温，得GaP纳米线。本发明还提供一种GaP/GaPN核壳纳米线，其制备方法为：将GaP纳米线置于两端开口的石英管中，放到反应炉中，抽真空，通入保护气，加热反应炉，升温至720℃‑800℃，停止抽真空并停止通入保护气，通入氨气，保温，得到核壳纳米线。本发明提供的纳米线作为光电极。

NEW MATERIAL AND METHOD OF ITS PRODUCTION

ÐÎÑÑÈÉÑÊÀß ÔÅÄÅÐÀÖÈß RU (19) (11) 2006 128 584 (13) A (51) ÌÏÊ C01B 33/02 (2006.01) ÔÅÄÅÐÀËÜÍÀß ÑËÓÆÁÀ ÏÎ ÈÍÒÅËËÅÊÒÓÀËÜÍÎÉ ÑÎÁÑÒÂÅÍÍÎÑÒÈ, ÏÀÒÅÍÒÀÌ È ÒÎÂÀÐÍÛÌ ÇÍÀÊÀÌ (12) ÇÀßÂÊÀ ÍÀ ÈÇÎÁÐÅÒÅÍÈÅ (21), (22) Çà âêà: 2006128584/15, 15.12.2004 (71) Çà âèòåëü(è): ÏÑÈÌÅÄÈÊÀ ËÈÌÈÒÅÄ (GB) (30) Êîíâåíöèîííûé ïðèîðèòåò: 06.01.2004 GB 0400149.1 (43) Äàòà ïóáëèêàöèè çà âêè: 20.02.2008 Áþë. ¹ 5 (87) Ïóáëèêàöè PCT: WO 2005/066073 (21.07.2005) Àäðåñ äë ïåðåïèñêè: 129010, Ìîñêâà, óë. Á.Ñïàññêà , 25, ñòð.3, ÎÎÎ "Þðèäè÷åñêà ôèðìà Ãîðîäèññêèé è Ïàðòíåðû", ïàò.ïîâ. Ã.Á. Åãîðîâîé, ðåã.¹ 513 R U (57) Ôîðìóëà èçîáðåòåíè 1. Ñïîñîá ïîëó÷åíè êîìïîçèöèîííîãî ìàòåðèàëà, âêëþ÷àþùåãî ôîñôîð è êðåìíèé, ïðè÷åì ñïîñîá âêëþ÷àåò ñòàäèè: (a) âç òèå îáðàçöà ôîñôîðà; (b) â çíà÷èòåëüíîé ñòåïåíè îêðóæåíèå îáðàçöà ôîñôîðà ñëîåì êðåìíè , ïðè ýòîì ñëîé êðåìíè âêëþ÷àåò ìíîæåñòâî ÷àñòèö êðåìíè ; (ñ) ïîäâåäåíèå òåïëà ê êðåìíèþ òàêèì ñïîñîáîì, ÷òî óñòàíàâëèâàåòñ ðàçíèöà òåìïåðàòóð, ïî ìåíüøåé ìåðå, ìåæäó ÷àñòüþ ñëî êðåìíè è îáðàçöîì ôîñôîðà, è òàêèì ñïîñîáîì, ÷òî, ïî ìåíüøåé ìåðå, ÷àñòü ôîñôîðà èñïàð åòñ ; è (d) ïîçâîëåíèå è/èëè ïðèíóæäåíèå, ïî ìåíüøåé ìåðå, íåêîòîðîãî êîëè÷åñòâà ïàðà ôîñôîðà êîíòàêòèðîâàòü, ïî ìåíüøåé ìåðå, ñ ÷àñòüþ ñëî êðåìíè òàêèì ñïîñîáîì, ÷òî îáðàçóåòñ ðàñïëàâëåííûé êîìïîçèöèîííûé ìàòåðèàë, âêëþ÷àþùèé êðåìíèé è ôîñôîð. 2. Ñïîñîá ïî ï.1, îòëè÷àþùèéñ òåì, ÷òî ñòàäèè (a), (b) è (ñ) âûïîëí þò òàêèì ñïîñîáîì, ÷òî, ïî ìåíüøåé ìåðå, ÷àñòü ñëî êðåìíè íàãðåâàþò äî òåìïåðàòóðû ðåàêöèè êðåìíè ìåæäó 900 è 1500°Ñ. 3. Ñïîñîá ïî ï.1, îòëè÷àþùèéñ òåì, ÷òî îáðàçåö ôîñôîðà âêëþ÷àåò êðàñíûé ôîñôîð. 4. Ñïîñîá ïî ï.1, îòëè÷àþùèéñ òåì, ÷òî ñïîñîá âêëþ÷àåò äàëüíåéøóþ ñòàäèþ (å) ðàñïûëåíè , ïî ìåíüøåé ìåðå, ÷àñòè ðàñïëàâëåííîãî êîìïîçèöèîííîãî ìàòåðèàëà, îáðàçîâàííîãî íà ñòàäèè (d). 5. Ñïîñîá ïî ï.4, îòëè÷àþùèéñ òåì, ÷òî ñïîñîá âêëþ÷àåò äàëüíåéøèå ñòàäèè: (fi) îõëàæäåíè è çàòåì (fii) ïîðîîáðàçîâàíè , ïî ìåíüøåé ìåðå, íåêîòîðîãî êîëè÷åñòâà êîìïîçèöèîííîãî ìàòåðèàëà, îáðàçîâàííîãî íà ñòàäèè (å). Ñòðàíèöà: 1 RU A 2 0 0 ...

Method for producing a semiconductor wafer with distributed doping and wafer comprising a distributed field

半导体晶片在包含掺杂剂的模具上形成。掺杂剂对邻近模具的熔体区域进行掺杂。在那里，掺杂剂浓度高于熔体块体中的掺杂剂浓度。晶片开始凝固。掺杂剂在固体半导体中不良地扩散。在晶片开始凝固之后，掺杂剂不能进入熔体。之后，邻近晶片表面的熔体中的掺杂剂的浓度小于晶片开始形成的地方存在的掺杂剂的浓度。新的晶片区域从其掺杂剂浓度随时间的推移减少的熔体区域生长。这在晶片中建立了掺杂剂梯度，邻近模具具有较高浓度。能够修整梯度。梯度产生能够起漂移场或背表面场的作用的场。太阳能收集器能够在背表面上具有开放栅格导体和更好的光学反射器，固有的背表面场使所述更好的光学反射器变得可能。

Zirconium gem composition and method for changing color of zirconium gem composition

本发明提供了一种锆宝石组合物，属于锆宝石领域，它解决了现有不同颜色的锆宝石生成需要的成本高等问题，一种锆宝石组合物，包括以下组分：立方氧化锆49‑59％；稳定剂40‑50％；着色剂0.2‑1.0％。采用本发明的方法能够改变本发明锆宝石组合物的颜色，且改变颜色的反应是可逆的，得到的锆宝石组合物颜色稳定，反应温度相对于现有技术大大降低了，降低了成本。

Ta surface doped high-nickel single crystal positive electrode material and preparation method thereof

本发明公开了Ta表面掺杂的高镍单晶正极材料及其制备方法，所述单晶正极材料包括：单晶正极材料(LiNi x Co y Mn 1‑x‑y O 2 ,x＞0.6，y＜0.2)内核和由Ta离子表面掺杂形成的金属富集层LiTa m (Ni x Co y Mn 1‑x‑y)1‑m O 2 ,x＞0.6，y＜0.2,0<m<1)。本发明的Ta表面掺杂的高镍单晶正极材料，单晶的生长受到抑制，同时保留了高价过渡金属离子对电池性能的提升作用，当进行碳包覆后，结合碳包覆层改善电子导电性，可以提高电池倍率、容量、循环性能。

Method for regulating the content of gallium in scintillators based on gadolinium-gallium garnets

FIELD: medicine; chemistry.SUBSTANCE: inventions relate to inorganic chemistry and medicine and can be used during the manufacturing of scintillators. First, the powder of general formula is obtained MMMMO(1), where O is oxygen; M, M, Mand M– metals, which are different from each other; the sum of a+b+c+d is about 8; "a" is from 2 to 3.5; "b" is from 0 to 5; "c" is from 0 to 5; "d" is from 0 to 1; while "b" and "c", "b" and "d" or "c" and "d" can not be simultaneously equal to zero; Mis a rare earth element, including gadolinium, yttrium, lutetium, scandium or a combination thereof; Mis aluminum or boron; Mis gallium; Mis a coactivator, which is selected from thallium, copper, silver, lead, bismuth, indium, tin, antimony, tantalum, tungsten, strontium, barium, boron, magnesium, calcium, cerium, yttrium, scandium, lanthanum, lutetium, praseodymium, terbium, ytterbium, samarium, europium, holmium, dysprosium, erbium, thulium or neodymium. Average particle size of the powder is from 5 nm to 500 mcm. Resulting powder is heated to 500–2,000 °C for its melting, and the resulting melt – up to 800–1,700 °C in the oxygen-containing atmosphere. During the subsequent stage, polycrystals or single crystals of garnets are obtained. For example, the garnets can have the following compositions: GdAlGaO, GdGaAlO, GdYGaAlOor GdLuAlGaOand are used in the products such as the imaging device or the tomography device.EFFECT: loss of gallium decreases when the crystals are obtained.19 cl РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 670 865 C2 (51) МПК C09K 11/08 (2006.01) G01T 1/20 (2006.01) A61B 6/03 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (52) СПК C09K 11/08 (2017.08); G01T 1/2012 (2017.08); A61B 6/032 (2017.08) (21)(22) Заявка: 2016146848, 30.11.2016 (24) Дата начала отсчета срока действия патента: Дата регистрации: (73) Патентообладатель(и): СИМЕНС ...

Method for producing part incorporating silicon substrate whose surface is covered with silicon carbide film

FIELD: manufacture of semiconductor materials for semiconductor devices. SUBSTANCE: proposed method for manufacturing part incorporating silicon substrate with silicon carbide film on its surface includes synthesis of silicon carbide film on substrate surface by joint heating of substrate and carbon-containing material at temperature of 1100 to 1400 °C; used as carbon-containing material is solid material brought in mechanical contact with substrate. EFFECT: facilitated procedure. 11 cl, 5 dwg ÐÎÑÑÈÉÑÊÀß ÔÅÄÅÐÀÖÈß RU (19) (11) 2 286 616 (13) C2 (51) ÌÏÊ H01L 21/205 (2006.01) ÔÅÄÅÐÀËÜÍÀß ÑËÓÆÁÀ ÏÎ ÈÍÒÅËËÅÊÒÓÀËÜÍÎÉ ÑÎÁÑÒÂÅÍÍÎÑÒÈ, ÏÀÒÅÍÒÀÌ È ÒÎÂÀÐÍÛÌ ÇÍÀÊÀÌ (12) ÎÏÈÑÀÍÈÅ ÈÇÎÁÐÅÒÅÍÈß Ê ÏÀÒÅÍÒÓ (21), (22) Çà âêà: 2005103321/28, 10.02.2005 (72) Àâòîð(û): Ãîðäååâ Ñåðãåé Êîíñòàíòèíîâè÷ (RU), Êîð÷àãèíà Ñâåòëàíà Áîðèñîâíà (RU), Êóêóøêèí Ñåðãåé Àðñåíüåâè÷ (RU), Îñèïîâ Àíäðåé Âèêòîðîâè÷ (RU) (24) Äàòà íà÷àëà îòñ÷åòà ñðîêà äåéñòâè ïàòåíòà: 10.02.2005 (43) Äàòà ïóáëèêàöèè çà âêè: 20.07.2006 Àäðåñ äë ïåðåïèñêè: 197101, Ñàíêò-Ïåòåðáóðã, óë. Á. Ìîíåòíà , 16, îôèñ-öåíòð ¹2, ÎÎÎ "Þðèäè÷åñêèé öåíòð "Ïåòåðáóðã-Èíòåëëåêò", ïàò. ïîâ. Â.À. Ñòàðîáîãàòîâîé, ðåã.¹538 (54) ÑÏÎÑÎÁ ÈÇÃÎÒÎÂËÅÍÈß ÈÇÄÅËÈß, ÑÎÄÅÐÆÀÙÅÃÎ ÊÐÅÌÍÈÅÂÓÞ ÏÎÄËÎÆÊÓ Ñ 2 2 8 6 6 1 6 (56) Ñïèñîê äîêóìåíòîâ, öèòèðîâàííûõ â îò÷åòå î ïîèñêå: JP 2001085341 À, 30.03.2001. JP 3197392 À, 28.08.1991. US 6773508 À, 10.08.2004. SU 552860 A1, 20.06.2000. R U (73) Ïàòåíòîîáëàäàòåëü(è): ÔÎÍÄ ÏÎÄÄÅÐÆÊÈ ÍÀÓÊÈ È ÎÁÐÀÇÎÂÀÍÈß (RU), ÎÁÙÅÑÒÂÎ Ñ ÎÃÐÀÍÈ×ÅÍÍÎÉ ÎÒÂÅÒÑÒÂÅÍÍÎÑÒÜÞ "ÓÏÐÀÂËßÞÙÀß ÊÎÌÏÀÍÈß "ÑÎÇÂÅÇÄÈÅ" (ÎÎÎ "ÓÊ "ÑÎÇÂÅÇÄÈÅ") (RU) (45) Îïóáëèêîâàíî: 27.10.2006 Áþë. ¹ 30 2 2 8 6 6 1 6 R U (57) Ðåôåðàò: Èçîáðåòåíèå îòíîñèòñ ê òåõíîëîãèè ïîëó÷åíè ïîëóïðîâîäíèêîâûõ ìàòåðèàëîâ è ìîæåò áûòü èñïîëüçîâàíî ïðè ñîçäàíèè ïîëóïðîâîäíèêîâûõ ïðèáîðîâ. Òåõíè÷åñêèì ðåçóëüòàòîì èçîáðåòåíè âë åòñ óïðîùåíèå òåõíîëîãèè èçãîòîâëåíè èçäåëè . Ñóùíîñòü èçîáðåòåíè : â ñïîñîáå èçãîòîâëåíè èçäåëè , ñîäåðæàùåãî êðåìíèåâóþ ïîäëîæêó ñ ïëåíêîé èç êàðáèäà êðåìíè íà åå ...

Template for epitaxial growth, a method for producing it and a nitride semiconductor device

Настоящее изобретение предусматривает способ получения шаблона для эпитаксиального выращивания. Способ содержит стадию поверхностной обработки, включающий диспергирование Ga-атомов на поверхности сапфировой подложки, и стадию эпитаксиального выращивания AlN-слоя на сапфировой подложке, где при распределении концентрации Ga в направлении глубины перпендикулярно поверхности сапфировой подложки во внутренней области AlN-слоя, исключая зону вблизи поверхности до глубины 100 нм от поверхности AlN-слоя, полученной вторичной ионно-массовой спектрометрией, положение в направлении глубины, где Ga - концентрация имеет максимальное значение, находится в области вблизи границы раздела, расположенной между границей раздела сапфировой подложки и положением, на 400 нм отстоящим от границы раздела к стороне AlN-слоя, и максимальное значение Ga-концентрации составляет 3×10 17 атом/см 3 или более и 2×10 20 атом/см 3 или менее. Изобретение обеспечивает получение шаблона без трещин и дислокаций для упрощения эпитаксиального выращивания. 3 н. и 4 з.п. ф-лы, 7 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 653 118 C1 (51) МПК H01L 21/20 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (52) СПК H01L 21/20 (2018.02); H01L 21/203 (2018.02); H01L 21/205 (2018.02); C30B 29/38 (2018.02); H01L 21/02458 (2018.02) (21)(22) Заявка: 2015144456, 29.08.2014 29.08.2014 (73) Патентообладатель(и): СОКО КАГАКУ КО., ЛТД. (JP) Дата регистрации: 07.05.2018 2011/155010 A1, 15.12.2011. US 2008/0242060 A1, 02.10.2008. US 2008/0233721 A1, 25.09.2008. US 2010/0219395 A1, 02.09.2010. US 6426519 B1, 30.07.2002. RU 2462786 C2, 27.09.2012. (45) Опубликовано: 07.05.2018 Бюл. № 13 (85) Дата начала рассмотрения заявки PCT на национальной фазе: 29.03.2017 (86) Заявка PCT: 2 6 5 3 1 1 8 R U (87) Публикация заявки PCT: WO 2016/031039 (03.03.2016) Адрес для переписки: 129090, Москва, ул. Б. Спасская, 25, стр. 3, ООО "Юридическая фирма Городисский и Партнеры" (54) ШАБЛОН ДЛЯ ...

Manufacturing method of substrate for solar cell

【課題】 基板の酸素濃度が多い場合であっても、基板のライフタイムの低下を抑制することができる太陽電池用基板の製造方法を提供する。【解決手段】 単結晶シリコンからなる太陽電池用基板の製造方法であって、シリコン単結晶インゴットを作製する工程と、前記シリコン単結晶インゴットからシリコン基板を切り出す工程と、前記シリコン基板に対して８００℃以上１２００℃未満の温度で低温熱処理を行う工程とを有し、前記低温熱処理を行う前に、前記シリコン単結晶インゴット又は前記シリコン基板に対して１２００℃以上の温度で３０秒以上の高温熱処理を行うことを特徴とする太陽電池用基板の製造方法。【選択図】 図１ PROBLEM TO BE SOLVED: To provide a method for manufacturing a solar cell substrate capable of suppressing a decrease in the lifetime of the substrate even when the substrate has a high oxygen concentration. A method for manufacturing a substrate for a solar cell made of single crystal silicon, the step of producing a silicon single crystal ingot, the step of cutting a silicon substrate from the silicon single crystal ingot, and 800 for the silicon substrate. High temperature heat treatment at a temperature of 1200 ° C. or higher for the silicon single crystal ingot or the silicon substrate before performing the low temperature heat treatment. The manufacturing method of the board | substrate for solar cells characterized by performing. [Selection] Figure 1

Impurity diffusion method

본 발명은 저농도부터 고농도까지 제어가능하고, 균일성이 좋은 불순물 확산방법을 제공하는 것이다. The present invention provides an impurity diffusion method which is controllable from low to high concentrations and has good uniformity. 확산의 분위기 가스에 환원성의 분위기 가스를 사용하고, 그 분위기 가스에 의하여 미리 반도체 기판 표면의 자연 산화막을 제거한다. 그 다음, 상기 환원성 분위기 가스를 흐르게 하면서 불순물 가스를 흐르게 함으로서, 확산을 행한다. 이때 상기 확산층의 불순물 농도가, 상기 불순물 가스의 유량 또는 농도에 의하여 제어되도록, 상기 불순물 가스의 유량 또는 농도의 값이 설정되어 이루어지는 것을 특징으로 한다. A reducing atmosphere gas is used as the diffusion atmosphere gas, and the native oxide film on the surface of the semiconductor substrate is removed in advance by the atmosphere gas. Then, diffusion is performed by flowing an impurity gas while flowing the reducing atmosphere gas. At this time, it is characterized in that the value of the flow rate or concentration of the impurity gas is set so that the impurity concentration of the diffusion layer is controlled by the flow rate or concentration of the impurity gas. 본 발명에 의하면, 불순물 가스의 농도, 유량을 조절함으로서 확산층의 불순물 농도를 제어할 수 있다. 또, 저불순물 농도의 확산층을 형성할 수 있다. 또, 50nm 이하의 얕은 접합을 형성할 수가 있다. According to the present invention, the impurity concentration of the diffusion layer can be controlled by adjusting the concentration and the flow rate of the impurity gas. In addition, a diffusion layer having a low impurity concentration can be formed. In addition, a shallow junction of 50 nm or less can be formed.

Vapour phase diffusion of semiconductors - using metal element to trap poisoning impurities

A process for doping a semiconductor with at least two elements, one from Group IIIA and one from Group VA and the semiconducting device produced are described. The doping is carried out in a chamber which is at least half-closed (i.e. completely air-tight or with a passageway for limited gaseous exchange with the outside). The contents of the chamber are heated simultaneously. The semiconductor and dopant are placed in their respective positions and a third solid material contg. Al, Ga, In, Ti or Ti is placed in a third position. Semiconductors are produced esp. electroluminescent diodes from Zn-doped GaP in which the red emission peak due to ZnO2 is eliminated. The third element traps impurities e.g. O2 which would poison the semi-condcutor. Less complex sources can be used. As the element trapping the impurities no longer has to be included in the source, industrially produced materials can be used as sources. The vapour of the trapping element moderates the partial pressures of the impurity element when the trapping element is incorporated in the source.

connection elements, in particular for semiconductors

Patent FR2293242B1

METHOD FOR REALIZING PN JUNCTION ON GROUP II-VI COMPOUND SEMICONDUCTOR

A.PROCEDE POUR REALISER UNE JONCTION PN DANS UN MONOCRISTAL SEMICONDUCTEUR COMPOSE DU GROUPE II-VI ESSENTIELLEMENT D'UN CERTAIN TYPE DE CONDUCTIVITE, SERVANT DE SUBSTRAT SEMI-CONDUCTEUR, CULTIVE PAR UN PROCEDE DE CULTURE EN MILIEU LIQUIDE UTILISANT UNE TECHNIQUE DE DIFFERENCE DE TEMPERATURE; B.PROCEDE CARACTERISE EN CE QU'ON INTRODUIT UNE IMPURETE 5 DE TYPE P DANS LE CRISTAL 1 EN ATMOSPHERE DE GAZ INERTE 4; CL'INVENTION S'APPLIQUE NOTAMMENT A LA FABRICATION DES DIODES EMETTRICES DE LUMIERE. A.PROCESS FOR MAKING A PN JUNCTION IN A SEMICONDUCTOR SINGLE CRYSTAL COMPOSED OF GROUP II-VI ESSENTIALLY OF A CERTAIN TYPE OF CONDUCTIVITY, SERVING AS A SEMICONDUCTOR SUBSTRATE, CULTIVATED BY A PROCESS OF CULTURE IN A LIQUID MEDIUM USING A TEMPERATURE DIFFERENCE TECHNIQUE ; B.PROCEDE CHARACTERIZED IN THAT AN IMPURITY 5 OF TYPE P IS INTRODUCED INTO CRYSTAL 1 IN AN INERT GAS ATMOSPHERE 4; THE INVENTION APPLIES IN PARTICULAR TO THE MANUFACTURING OF LIGHT-EMITTING DIODES.

Semiconductor device and manufacturing method

Stable suspensions of boron, phosphorus, antimony and arsenic dopants

ABSTRACT STABLE SUSPENSIONS OF BORON, PHOSPHORUS, ANTIMONY AND ARSENIC DOPANTS Semiconductor doping compositions comprising a sus-pension of (a) a dopant material, in the form of finely divided spherical particles, such as PxSiy or BxSiy wherein x and y vary from 0.001 to 99.999 mole percent, (b) an effective amount of a thermally degradable polymeric organic binder such as polymethyl methacry-late; and (c) an amount of an organic solvent, such a cyclohexanone, sufficient to dissolve said polymeric organic binder, such as polymethylmethacrylate, and to disperse said dopant material are disclosed. Three one-step diffusion processes using the semiconductor doping compositions of the present invention for preparation of semiconductor materials having a wide range of sheet resistances and junction depths are also disclosed. The dopant materials selected for the semiconductor compositions of the present invention are less sensitive to moisture and chemical degradation and thereby afford greater processing latitude, are more reproducible and are less prone to create damage to and/or staining of the semiconductor substrate.

Preparation of semiconductor materials

Oxygen-doped zinc telluride monocrystals prepn. - by heat treatment in an oxygen atmosphere

Process comprises first introducing >=1 ZnTe crystal into a SiO2 ampoule at a distance away from a ternary mixt. of Zn, Te and O, the latter in the form of a (hydr)oxide of Zn and Te. The amouple is then evacuated to a high vacuum and sealed, before heating uniformly in furnace to a temp. sufficient to form a 3-phase mixt. according to the compsn. while the ZnTe remains solid, for a time (t) with the thickness of the crystal, but sufficient to bring the crystal to an equilibrium state with the mixt. so as to diffuse O into the crystal. After the time (t) the ampoule is rapidly quenched to ambient temp. Used for prodn. of rapid scintillator crystals for detection of ionising radiations, gamma or x-rays; in association with photomultipliers, as a replacement for thallium activated NaI.

Method for obtaining a p-type doped region in a semiconductor body

BROADCASTING OVEN

METHOD AND DEVICE FOR DOPING, DIFFUSING AND PYROLITHIC OXIDATION OF REDUCED PRESSURE SILICON WAFERS

System and method for increasing III-nitride semiconductor growth rate and reducing damaging ion flux

Systems and methods are disclosed for rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 μm/hour can be achieved.

Method of diffusing a doping impurity in a semiconductor crystal

Method for producing a doped region in a semiconductor body

Diffusion of phosphorus into silicon substr- - ates

Silicon slices are doped in a closed furnace using a vitreous P2O5 source and dry, inert carrier gas. The source is held in a stable temp. part of the furnace so that the rate of vaporisation of P2O5 is strictly controlled. N+ type doping is achieved with +10% reproducibility even at weak concns. of 1017 at/cm3; the source material is less hygroscopic than conventional powder, and is simpler to handle and control.

Process for the controlled absorption of thin semiconductor films

PROCESS FOR THE MANUFACTURE OF PN JUNCTION OF SEMICONDUCTORS

Improvements to the process for limiting the surface concentration of an impurity in a semiconductor body

Prepn. of film-forming solns. for doping semiconductors - from phosphoric acid and tetra-alkoxy-silane in aq. dioxan

Manufacturing process of p-n junctions

Improvements to gold diffusion processes in semiconductor bodies

Amplifier devices using semiconductors or crystals

New manufacturing process for semiconductor devices

Diffusion transistor and its manufacturing process

Process for the manufacture of semiconductor bodies

Semiconductor p bare junctions

Heat treatment process for a semiconductor body

Semiconductor material treatment process

Patent FR2347094B1

METHOD FOR MEASURING ANISOTROPIC SURFACE DIFFUSION TENSOR OR ANISOTROPY OF SURFACE ENERGY

Method of diffusing ammonium phosphate at high concentration in silicon

Large area deposition and doping of graphene, and products including the same

Certain example embodiments of this invention relate to the use of graphene as a transparent conductive coating (TCC). In certain example embodiments, graphene thin films grown on large areas hetero-epitaxially, e.g., on a catalyst thin film, from a hydrocarbon gas (such as, for example, C 2 H 2 , CH 4 , or the like). The graphene thin films of certain example embodiments may be doped or undoped. In certain example embodiments, graphene thin films, once formed, may be lifted off of their carrier substrates and transferred to receiving substrates, e.g., for inclusion in an intermediate or final product. Graphene grown, lifted, and transferred in this way may exhibit low sheet resistances (e.g., less than 150 ohms/square and lower when doped) and high transmission values (e.g., at least in the visible and infrared spectra).

Method of diffusing silicon slices with dopant at high temperatures

A method of applying a boron dopant to silicon slices which comprises applying a dopant solution to the faces of each slice, packing a plurality of slices adjoining each other in a quartz boat and inserting the boat slowly into a tubular furnace. The boron surface of each slice is covered with alumina powder to eliminate sticking. After heating at 1350° Celsius for four hours the slices are slowly pulled out of furnace.

OPTICAL MATERIALS FROM INTERCALATION OF POLYVALENT CATIONS IN .beta. DOUBLE PRIME ALUMINA

ABSTRACT Beta double prime alumina is provided having a sensible amount of at least one polyvalent cationic species intercalated therein. In accordance with a preferred embodiment, such beta double prime alumina is provided having trivalent and/or tetravalent cationic species intercalated therein, especially species derived from the lanthanide and actinide series of elements. Certain of the foregoing materials exhibit phosphorescence or fluorescence, and some are believed to be capable of producing LASER emission upon suitable irradiation. Methods for modifying beta double prime aluminas comprising contacting crystals of the aluminas with polyvalent cation containing salts such as in the molten state or in the gaseous state are also provided. LASER and other optical devices are disclosed employing the modified beta double prime aluminas of this invention.

Doping of particulate semiconductor materials

Semiconductor material manufacturing method

조정가능한 도핑 프로필로 도핑된 반도체층을 성장시키는 방법이 공지되고, 상기 방법에 의하면 편석 효과는 반도체 물질이 성장할때 반도체 물질 전체에 걸쳐 도펀트 원자를 위치시킨다. 본 방법은 성장될 층의 두께에 관련된 일정량의 도펀트 물질을 물질 성장 이전에 기판상에 침착시킨다. 단결정 성장 공정동안, 편석 효과는 도펀트 물질을 반도체 층 전체에 걸쳐 위치시킨다. 물질 성장 온도는 성장된 층내에서 도펀트 원자의 이동에 기여한다.

Semiconductor arrangement with p-n passage, preferably transitor

Method and device for doping, diffusion and oxidation of silicon wafers under reduced pressure

Method and device for doping or diffusion, or oxidation of silicon wafers ( 4 ), the wafers being introduced into the chamber ( 2 ) of an oven ( 1 ) wherein is introduced at least a gas for performing the doping or diffusion or oxidation process. The method comprises simultaneously with the introduction and passage of gas into the chamber ( 2 ) of the oven ( 1 ), continuously subjecting the latter to a depression of constant value. The device comprises an oven ( 1 ) provided with a chamber ( 2 ) wherein are introduced the wafers, the oven including at least an inlet tube ( 5 a, 5 b, 5 c ) for introducing at least a gas into the chamber ( 2 ) to carry out the processes and at least an outlet tube ( 6 ) for extracting the gas whereto is connected a suction unit ( 7 ) for generating in the chamber ( 2 ) a constant and controlled depression.

Semiconductor devices and method for their manufacture

Method of processing a silicon carbide substrate for improved epitaxial deposition and structure and device obtained by the method