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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 69. Отображено 69.
24-04-2018 дата публикации

Solid polymer power generation or electrolysis method and system

Номер: US0009954239B2
Принадлежит: JAPAN AEROSPACE EXPLORATION AGENCY

There are provided: a solid polymer power generation or electrolysis method that does not require injection of energy from the outside and maintenance of a high temperature, and is capable of converting carbon dioxide to a useful hydrocarbon while producing energy, controlling the production amounts of the hydrocarbons or the like and a ratio sorted by kind of the hydrocarbons, improving utilization efficiency of a product, and simplifying equipment for separation and recovery; and a system for implementing the solid polymer power generation or electrolysis method. Carbon dioxide is supplied to the side of one electrode 111 of a reactor 110 having a membrane electrode assembly 113 , hydrogen is supplied to the side of the other electrode 112 , and the amounts of the hydrocarbons produced per unit time and the ratio sorted by kind of the hydrocarbons are changed by controlling a power generation voltage of the reactor 110.

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08-11-2016 дата публикации

Composite wavelength conversion powder, resin composition containing composite wavelength conversion powder, and light emitting device

Номер: US0009487697B2

A composite wavelength conversion powder and a resin composition containing a composite wavelength conversion powder which have high utilization efficiency of light and high utilization efficiency of a constituent material, and are able to make highly efficient light emission and high reliability compatible are provided. The composite wavelength conversion powder is formed by dispersing phosphor particles having a refractive index of 1.6 or more in matrix particles containing fine magnesium fluoride particles or fine calcium fluoride particles. In addition, a light emitting device which is able to improve utilization efficiency of light due to the phosphor particles excited by primary irradiation light emitted by a light emitting element, is able to improve the optical output of light emission by increasing an the amount of secondary irradiation light generated from the phosphor particles, and is able to suppress limit the occurrence of color unevenness or a color variation device in light emitted to the outside of the device is provided. A light emitting device ( 1 ) includes a substrate ( 2 ), a light emitting element ( 3 ) mounted on a front surface of the substrate ( 2 ), and a light transmitting member ( 4 ) formed to cover the light emitting element ( 3 ), and the light transmitting member ( 4 ) contains phosphor particles having an average particle diameter of 500 nm or less, and composite wavelength conversion particles ( 12 ) formed of inorganic particles having an average particle diameter of 500 nm or less which are transparent with respect to visible light.

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01-09-2016 дата публикации

N-TYPE ALUMINUM NITRIDE SINGLE-CRYSTAL SUBSTRATE AND VERTICAL NITRIDE SEMICONDUCTOR DEVICE

Номер: US20160254391A1
Принадлежит: TOKUYAMA CORPORATION

A vertical nitride semiconductor device includes an n-type aluminum nitride single-crystal substrate having an Si content of 3×10to 1×10cmand a dislocation density of 10cmor less. An ohmic electrode layer is formed on an N-polarity side of the n-type aluminum nitride single-crystal substrate. 1. A n-type aluminum nitride single crystal substrate wherein a Si content is 3×10to 1×10cm , a dislocation density is 10cmor less , and a thickness is 50 to 500 μm.2. A vertical nitride semiconductor device comprising electrode layers on top and bottom of principal planes of the n-type aluminum nitride single crystal substrate as set forth in .3. A vertical Schottky barrier diode comprising an ohmic electrode layer on one principal plane side and a Schottky electrode layer on the other principal plane of the n-type aluminum nitride single crystal substrate in the vertical nitride semiconductor device as set forth in .4. A laminated body stacked with a layer represented by AlGaN claim 1 , wherein X is a rational number satisfying 0.3≦X≦0.8 and having a Si content of 1×10to 5×10cm claim 1 , on at least one principal plane of the n-type aluminum nitride single crystal substrate as set forth in .5. A vertical nitride semiconductor device comprising electrode layers on top and bottom of principal planes of the layered body as set forth in .6. The vertical nitride semiconductor device as set forth in wherein one electrode layer on the layer represented by AlGaN claim 5 , wherein X is a rational number satisfying 0.3≦X≦0.8 is an ohmic electrode layer.7. A vertical Schottky barrier diode wherein one electrode layer on the n-type aluminum nitride single crystal substrate in the vertical nitride semiconductor device as set forth in is a Schottky electrode layer.8. The vertical Schottky barrier diode as set forth in wherein an electric current density is 10Acmor less when a reverse voltage is 100V.9. A production method of the n-type aluminum nitride single crystal substrate as set forth ...

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16-07-2009 дата публикации

SEALING DEVICE FOR ELEVATOR

Номер: US20090178341A1
Принадлежит: TOSHIBA ELEVATOR KABUSHIKI KAISHA

A sealing device for an elevator door includes a doorway member, doors, a movable member, a push-down mechanism and a sealing mechanism. The doorway member is provided for a gate. The doors open or close along the doorway member. The movable member is set horizontally and provided to be movable in a vertical direction in the doorway member, and it is urged upwards by an urging unit. The push-down mechanism pushes down the movable member against the force of the urging unit just before the doors are closed. The sealing mechanism is kept non-contact with the doors while they are moving, and seals the gap between the doors and the doorway member as it is brought into contact with upper section of the doors when the movable member is pushed down by the push-down mechanism.

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04-06-2009 дата публикации

Transparent Inorganic Oxide Dispersion and Iorganic Oxide Particle-Containing Resin Composition, Composition for Sealing Light Emitting Element and Light Emitting element, Hard Coat Film and Optical Functional Film and Optical Component, and Method for Producing Inorganic Oxide Pariticle-Containing Resin

Номер: US20090140284A1
Принадлежит: SUMITOMO OSAKA CEMENT CO., LTD.

The present invention provides a transparent inorganic oxide dispersion which makes it possible to improve the refractive index and mechanical characteristics and to maintain transparency by modifying the surface of inorganic oxide particles with a surface modifier having one or more reactive functional groups; and an inorganic oxide particle-containing resin composition in which the transparent inorganic oxide dispersion and a resin are compositely integrated by the polymerization reaction, a composition for sealing a light emitting element, a light emitting element, and a method for producing an inorganic oxide particle-containing resin composition; and a hard coat film which has high transparency and makes it possible to improve a refractive index and tenacity, an optical functional film, an optical lens and an optical component. The transparent inorganic oxide dispersion of the present invention comprises inorganic oxide particles which have a surface modified with a surface modifier having one or more reactive functional groups and have a disperse particle diameter of 1 nm or more and 20 nm or less, and a disperse medium, wherein the surface modifier is one or more kinds selected from the group consisting of a silane coupling agent, a modified silicone, and a surfactant.

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22-08-2013 дата публикации

Method for Manufacturing Optical Element

Номер: US20130214325A1
Принадлежит: TOKUYAMA CORPORATION

A method for manufacturing an optical element includes a step wherein an aluminum nitride single crystal layer is formed on an aluminum nitride seed substrate having an aluminum nitride single crystal surface as the topmost surface. A laminated body for an optical element is manufactured by forming an optical element layer on the aluminum nitride single crystal layer, and the aluminum nitride seed substrate is removed from the laminated body. An optical element having, as a substrate, an aluminum nitride single crystal layer having a high ultraviolet transmittance and a low dislocation density is provided.

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28-02-2019 дата публикации

Vertical-Type Ultraviolet Light-Emitting Diode

Номер: US20190067523A1
Принадлежит: Stanley Electric Co., Ltd.

A vertical ultraviolet light-emitting diode has, on an aluminum polar plane of an n-type AlN single crystal substrate, a layer represented by n-type AlGaN (wherein X is a rational number satisfying 0.5≤X≤1.0), an active layer, a layer represented by p-type AlGaN (wherein Y is a rational number satisfying 0.5≤Y≤1.0) and a p-type GaN layer in this order and which is equipped with a p-electrode formed on the p-type GaN layer and an n-electrode partially provided on a plane on the opposite side to the aluminum polar plane of the n-type AlN single crystal substrate, preferably an n-electrode formed by providing at least one opening functioning as a light extraction window, wherein the shortest distance between the n-electrode and an arbitrary point in a portion where the n-electrode is not provided, is not more than 400 μm. 1. A vertical ultraviolet light-emitting diode having an emission peak wavelength in range of 210 to 300 nm , comprising:{'sub': X', '1-X', 'Y', '1-Y, 'on an aluminum polar plane of an n-type AlN single crystal substrate, a layer represented by n-type AlGaN, wherein X is a rational number satisfying 0.5≤X≤1.0, an active layer, a layer represented by p-type AlGaN, wherein Y is a rational number satisfying 0.5≤Y≤1.0, and a p-type GaN layer in this order,'}the ultraviolet light-emitting diode is equipped with a p-electrode formed on the p-type GaN layer and an n-electrode partially provided on a plane on the opposite side to the aluminum polar plane of the n-type AlN single crystal substrate, andthe shortest distance between the n-electrode and an arbitrary point in a portion where the n-electrode is not provided, the portion being on the plane on the opposite side, is not more than 400 μm.2. A vertical ultraviolet light-emitting diode having an emission peak wavelength in range of 210 to 300 nm , comprising:{'sub': X', '1-X', 'Y', '1-Y, 'on an aluminum polar plane of an n-type AlN single crystal substrate, a layer represented by n-type AlGaN, wherein x ...

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01-02-2018 дата публикации

Group III Nitride Laminate and Light Emitting Element Comprising Said Laminate

Номер: US20180033913A1
Принадлежит: Stanley Electric Co., Ltd.

A group III nitride laminate includes, on an AlN single crystal substrate, a multilayer structure having an AlGaN layer (0 Подробнее

12-04-2011 дата публикации

Sealing device for elevator

Номер: US0007921970B2

A sealing device for an elevator door includes a doorway member, doors, a movable member, a push-down mechanism and a sealing mechanism. The doorway member is provided for a gate. The doors open or close along the doorway member. The movable member is set horizontally and provided to be movable in a vertical direction in the doorway member, and it is urged upwards by an urging unit. The push-down mechanism pushes down the movable member against the force of the urging unit just before the doors are closed. The sealing mechanism is kept non-contact with the doors while they are moving, and seals the gap between the doors and the doorway member as it is brought into contact with upper section of the doors when the movable member is pushed down by the push-down mechanism.

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12-12-2017 дата публикации

Highly transparent aluminum nitride single crystalline layers and devices made therefrom

Номер: US0009840790B2

The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline AlN layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200° C.

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11-10-2012 дата публикации

N-Type Contact Electrode Comprising a Group III Nitride Semiconductor, and Method Forming Same

Номер: US20120258591A1
Принадлежит: TOKUYAMA CORPORATION

A method for forming an n-type contact electrode comprising an n-type nitride semiconductor such as AlInGaN (with x, y, and z being rational numbers that sum to 1.0 and fulfill the relations 0 Подробнее

26-07-2011 дата публикации

Transparent zirconia dispersion and zirconia particle-containing resin composition, composition for sealing light emitting element and light emitting element, hard coat film and optical functional film and optical component, and method for producing zirconia particle-containing resin

Номер: US0007985476B2

The present invention provides a transparent inorganic oxide dispersion which makes it possible to improve the refractive index and mechanical characteristics and to maintain transparency by modifying the surface of inorganic oxide particles with a surface modifier having one or more reactive functional groups; and an inorganic oxide particle-containing resin composition in which the transparent inorganic oxide dispersion and a resin are compositely integrated by the polymerization reaction, a composition for sealing a light emitting element, a light emitting element, and a method for producing an inorganic oxide particle-containing resin composition; and a hard coat film which has high transparency and makes it possible to improve a refractive index and tenacity, an optical functional film, an optical lens and an optical component. The transparent inorganic oxide dispersion of the present invention comprises inorganic oxide particles which have a surface modified with a surface modifier ...

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04-08-2020 дата публикации

Group III nitride laminate and vertical semiconductor device having the laminate

Номер: US0010731274B2

A group III nitride laminate having monocrystalline n-type AlxGa1-xN (0.7≤X≤1.0) and an electrode is provided. The group III nitride laminate is characterized in that an n-type contact layer made of (AlYGa1-Y)2O3 (0.0≤Y<0.3) is provided between the monocrystalline n-type AlxGa1-xN (0.7≤X≤1.0) and the electrode. Furthermore, a vertical semiconductor device including the above-described group III nitride laminate is provided.

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29-08-2017 дата публикации

N-type aluminum nitride single-crystal substrate and vertical nitride semiconductor device

Номер: US0009748410B2
Принадлежит: Tokuyama Corporation, TOKUYAMA CORP

A vertical nitride semiconductor device includes an n-type aluminum nitride single-crystal substrate having an Si content of 3×10 17 to 1×10 20 cm −3 and a dislocation density of 10 6 cm −2 or less. An ohmic electrode layer is formed on an N-polarity side of the n-type aluminum nitride single-crystal substrate.

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19-07-2012 дата публикации

Production Method of a Layered Body

Номер: US20120183809A1
Принадлежит: TOKUYAMA CORPORATION

A production method of a layered body having a single crystal layer including a group III nitride having a composition AlXGaYInZN (wherein, X, Y and Z are rational numbers respectively satisfying 0.9X1.0, 0.0Y0.1, 0.0Z0.1, and X+Y+Z=1.0) includes a first growing step supplying an oxygen source gas to a sapphire substrate with a nitrogen source gas and a group III raw material gas which is a raw material gas for growing the group III nitride single crystal, thereby growing an initial single crystal layer comprising the group III nitride satisfying the composition and comprising oxygen in a concentration of 1×1020 cm3 or more and 5×1021 cm3 or less in a thickness of 15 nm or more and 40 nm or less on the sapphire substrate; and a second growing step of supplying the raw material gas without the oxygen source gas, or supplying the oxygen source gas in a less amount than the first growing step together with the raw material gas onto the initial single crystal layer, thereby growing the second ...

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12-05-2011 дата публикации

COMPOSITE CERAMIC POWDER, PROCESS OF PRODUCING THE SAME, AND SOLID-OXIDE FUEL CELL

Номер: US20110111230A1
Принадлежит: Sumitomo Osaka Cement Co., Ltd.

A composite ceramic powder, which is excellent in uniform distribution at a nanometer level, composition controllability, and generation of oxygen ions or electron conductivity, a process of producing the composite ceramic powder, and a solid-oxide fuel cell, are provided. The composite ceramic powder includes oxide expressed by A1-xBxC1-yDyO3 (where A represents one or two elements selected from the group consisting of La and Sm; B represents one or two or more elements selected from the group consisting of Sr, Ca, and Ba; C represents one or two elements selected from the group consisting of Co and Mn; D represents one or two elements selected from the group consisting of Fe and Ni; and x and y satisfy 0.1≦x≦0.5 and 0≦y≦0.3) or nickel oxide and zirconia. Here, a neutralized precipitate is produced by adding a zirconia acidic dispersion containing zirconia particles formed of yttria-stabilized zirconia and nickel ions or ions of one or two or more elements selected from the group consisting ...

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03-08-2017 дата публикации

N-Type Aluminum Nitride Monocrystalline Substrate

Номер: US20170222064A1
Принадлежит: Tokuyama Corporation

A silicon-doped n-type aluminum nitride monocrystalline substrate wherein, at a photoluminescence measurement at 23° C., a ratio (I1/I2) between the emission spectrum intensity (I1) having a peak within 370 to 390 nm and the emission peak intensity (I2) of the band edge of aluminum nitride is 0.5 or less; a thickness is from 25 to 500 μm; and a ratio (electron concentration/silicon concentration) between the electron concentration and the silicon concentration at 23° C. is from 0.0005 to 0.001.

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04-08-2016 дата публикации

SOLID POLYMER POWER GENERATION OR ELECTROLYSIS METHOD AND SYSTEM

Номер: US20160226090A1
Принадлежит: Japan Aerospace Exploration Agency

There are provided: a solid polymer power generation or electrolysis method that does not require injection of energy from the outside and maintenance of a high temperature, and is capable of converting carbon dioxide to a useful hydrocarbon while producing energy, controlling the production amounts of the hydrocarbons or the like and a ratio sorted by kind of the hydrocarbons, improving utilization efficiency of a product, and simplifying equipment for separation and recovery; and a system for implementing the solid polymer power generation or electrolysis method. Carbon dioxide is supplied to the side of one electrode 111 of a reactor 110 having a membrane electrode assembly 113 , hydrogen is supplied to the side of the other electrode 112 , and the amounts of the hydrocarbons produced per unit time and the ratio sorted by kind of the hydrocarbons are changed by controlling a power generation voltage of the reactor 110.

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26-05-2020 дата публикации

Vertical-type ultraviolet light-emitting diode

Номер: US0010665753B2

A vertical ultraviolet light-emitting diode has, on an aluminum polar plane of an n-type AlN single crystal substrate, a layer represented by n-type AlXGa1-XN (wherein X is a rational number satisfying 0.5≤X≤1.0), an active layer, a layer represented by p-type AlYGa1-YN (wherein Y is a rational number satisfying 0.5≤Y≤1.0) and a p-type GaN layer in this order and which is equipped with a p-electrode formed on the p-type GaN layer and an n-electrode partially provided on a plane on the opposite side to the aluminum polar plane of the n-type AlN single crystal substrate, preferably an n-electrode formed by providing at least one opening functioning as a light extraction window, wherein the shortest distance between the n-electrode and an arbitrary point in a portion where the n-electrode is not provided, is not more than 400 μm.

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05-05-2020 дата публикации

Group III nitride stacked body, and semiconductor device having the stacked body

Номер: US0010644199B2

Provided is a group III nitride stacked body having an n-type AlXGa1-XN (0.5≤X<1) layer formed on an AlN single crystal substrate while being lattice-matched to the AlN single crystal substrate wherein the n-type AlXGa1-XN (0.5≤X<1) layer has at least a stacked structure in which a first n-type AlX1Ga1-X1N (0.5≤X1<1) layer, a second n-type AlX2Ga1-X2N (0.5≤X2<1) layer, and a third n-type AlX3Ga1-X3N (0.5≤X3<1) layer are stacked in this order from the AlN single crystal substrate side, and X1, X2, and X3 indicating the Al compositions of the respective layers satisfy 0<|X1−X2|≤0.1, and satisfy 0<|X2−X3|≤0.1.

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08-06-2021 дата публикации

Optical semiconductor element comprising n-type algan graded layer

Номер: US0011031522B2

An optical semiconductor element comprises: an AlN substrate; an n-type semiconductor layer composed of an AlGaN layer, the AlGaN layer being grown on the AlN substrate and being pseudomorphic with the AlN substrate, an Al composition or the AlGaN layer being reduced with an increase in distance from the AlN substrate; an active layer which is grown on the n-type semiconductor layer; and a p-type semiconductor layer which is grown on the active layer.

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08-09-2009 дата публикации

Sealing device for elevator

Номер: US0007584825B2

A sealing device for an elevator door includes a doorway member, doors, a movable member, a push-down mechanism and a sealing mechanism. The doorway member is provided for a gate. The doors open or close along the doorway member. The movable member is set horizontally and provided to be movable in a vertical direction in the doorway member, and it is urged upwards by an urging unit. The push-down mechanism pushes down the movable member against the force of the urging unit just before the doors are closed. The sealing mechanism is kept non-contact with the doors while they are moving, and seals the gap between the doors and the doorway member as it is brought into contact with upper section of the doors when the movable member is pushed down by the push-down mechanism.

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29-03-2016 дата публикации

Layered body having a single crystal layer

Номер: US0009297093B2

A layered body having a single crystal layer including a group III nitride having a composition Al x Ga y In z N (wherein, X, Y and Z are rational numbers respectively satisfying 0.9≦X≦1.0, 0.0≦Y≦0.1, 0.0≦Z≦0.1, and X+Y+Z=1.0) on a sapphire substrate. The layered body includes an initial single crystal layer that includes the group III nitride composition, an oxygen concentration of 1×10 20 cm −3 or more and 5×10 21 cm−3 or less and a thickness of 15 nm or more and 40 nm or less on the sapphire substrate and a second group III nitride single crystal layer including the group III nitride composition and having a reduced oxygen concentration than the initial single crystal layer.

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21-10-2014 дата публикации

N-type contact electrode formed on an N-type semiconductor layer and method of forming same using a second metal electrode layer heat-treated after being formed on a first, heat-treated metal electrode layer

Номер: US0008865591B2

A method for forming an n-type contact electrode, which includes an n-type nitride semiconductor such as AlxInyGazN (with x, y, and z being rational numbers that sum to 1.0 and fulfill the relations 0 Подробнее

22-04-2014 дата публикации

Production method of a layered body

Номер: US0008704239B2

Disclosed is a novel method for group III polarity growth on a sapphire substrate. Specifically disclosed is a method for producing a laminate wherein a group III nitride single crystal layer is laminated on a sapphire substrate by an MOCVD method. The method for producing a laminate comprises: a pretreatment step in which an oxygen source gas is supplied onto the sapphire substrate; a first growth step in which an initial single crystal layer that contains oxygen at a concentration of 5×1020 cm3 or more but 5×1021 cm3 or less is grown with a thickness of 3 nm or more but less than 15 nm by supplying the oxygen source gas onto the sapphire substrate together with a starting material gas for the growth of the group III nitride; and a second growth step in which a group III nitride single crystal layer that is reduced in the oxygen concentration in comparison to the initial single crystal layer is grown by supplying the starting material gas onto the initial single crystal layer without supplying ...

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07-08-2012 дата публикации

P-type group III nitride semiconductor and group III nitride semiconductor element

Номер: US0008238391B2

This invention provides a p-type group III nitride semiconductor, with good p-type properties, having a composition expressed by AlXGaYInZN in which each of X, Y and Z indicates a rational number satisfying a relationship of X+Y+Z=1.0, even if Al content is as high as 1.0>X0.5. It is achieved that a proportion of a hole concentration at 30° C. to an acceptor impurity atom concentration is 0.001 or more in the p-type group III nitride semiconductor of the invention, by doping acceptor impurity atoms such as Mg in concentration of 5×1018 to 1×1020 cm3 using the method, for example, MOCVD with attention not to incorporate an impurity atom other than the acceptor impurity atom or not to form dislocation in the crystal when producing the group III nitride semiconductor expressed by the above composition.

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31-10-2017 дата публикации

N-type aluminum nitride monocrystalline substrate

Номер: US0009806205B2
Принадлежит: Tokuyama Corporation, TOKUYAMA CORP

A silicon-doped n-type aluminum nitride monocrystalline substrate wherein, at a photoluminescence measurement at 23° C., a ratio (I1/I2) between the emission spectrum intensity (I1) having a peak within 370 to 390 nm and the emission peak intensity (I2) of the band edge of aluminum nitride is 0.5 or less; a thickness is from 25 to 500 μm; and a ratio (electron concentration/silicon concentration) between the electron concentration and the silicon concentration at 23° C. is from 0.0005 to 0.001.

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08-12-2005 дата публикации

Sealing device for elevator

Номер: US20050269038A1
Принадлежит: TOSHIBA ELEVATOR KABUSHIKI KAISHA

A sealing device for an elevator door includes a doorway member, doors, a movable member, a push-down mechanism and a sealing mechanism. The doorway member is provided for a gate. The doors open or close along the doorway member. The movable member is set horizontally and provided to be movable in a vertical direction in the doorway member, and it is urged upwards by an urging unit. The push-down mechanism pushes down the movable member against the force of the urging unit just before the doors are closed. The sealing mechanism is kept non-contact with the doors while they are moving, and seals the gap between the doors and the doorway member as it is brought into contact with upper section of the doors when the movable member is pushed down by the push-down mechanism.

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14-06-2011 дата публикации

Sealing device for elevator

Номер: US0007958972B2

A sealing device for an elevator door includes a doorway member, doors, a movable member, a push-down mechanism and a sealing mechanism. The doorway member is provided for a gate. The doors open or close along the doorway member. The movable member is set horizontally and provided to be movable in a vertical direction in the doorway member, and it is urged upwards by an urging unit. The push-down mechanism pushes down the movable member against the force of the urging unit just before the doors are closed. The sealing mechanism is kept non-contact with the doors while they are moving, and seals the gap between the doors and the doorway member as it is brought into contact with upper section of the doors when the movable member is pushed down by the push-down mechanism.

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17-05-2016 дата публикации

Aluminum nitride substrate and group-III nitride laminate

Номер: US0009343525B2

A substrate includes aluminum nitride, wherein the aluminum nitride substrate has on at least a surface thereof an aluminum nitride single-crystal layer having as a principal plane a plane that is inclined 0.05° to 0.40° in the m-axis direction from the (0001) plane of a wurzite structure.

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02-06-2011 дата публикации

P-TYPE GROUP III NITRIDE SEMICONDUCTOR AND GROUP III NITRIDE SEMICONDUCTOR ELEMENT

Номер: US20110128981A1
Принадлежит:

This invention provides a p-type group III nitride semiconductor, with good p-type properties, having a composition expressed by AlxGayInzN in which each of X, Y and Z indicates a rational number satisfying a relationship of X+Y+Z=1.0, even if Al content is as high as 1.0>X≧0.5. It is achieved that a proportion of a hole concentration at 30° C. to an acceptor impurity atom concentration is 0.001 or more in the p-type group III nitride semiconductor of the invention, by doping acceptor impurity atoms such as Mg in concentration of 5×1018 to 1×1020 cm−3 using the method, for example, MOCVD with attention not to incorporate an impurity atom other than the acceptor impurity atom or not to form dislocation in the crystal when producing the group III nitride semiconductor expressed by the above composition.

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06-09-2012 дата публикации

Production Method of a Layered Body

Номер: US20120223329A1
Принадлежит: TOKUYAMA CORPORATION

Disclosed is a novel method for group III polarity growth on a sapphire substrate. Specifically disclosed is a method for producing a laminate wherein a group III nitride single crystal layer is laminated on a sapphire substrate by an MOCVD method. The method for producing a laminate comprises: a pretreatment step in which an oxygen source gas is supplied onto the sapphire substrate; a first growth step in which an initial single crystal layer that contains oxygen at a concentration of 5×10cmor more but 5×10cmor less is grown with a thickness of 3 nm or more but less than 15 nm by supplying the oxygen source gas onto the sapphire substrate together with a starting material gas for the growth of the group III nitride; and a second growth step in which a group III nitride single crystal layer that is reduced in the oxygen concentration in comparison to the initial single crystal layer is grown by supplying the starting material gas onto the initial single crystal layer without supplying the oxygen source thereto, or alternatively by supplying the oxygen source, together with the starting material gas, at a lower supply rate than that in the first growth step. 1. A production method of a layered body having a single crystal layer comprising a group III nitride satisfying a composition shown by AlGaInN (wherein , X , Y and Z are rational numbers respectively satisfying 0.9≦X≦1.0 , 0.0≦Y≦0.1 , 0.0≦Z≦0.1 , and X+Y+Z=1.0) on a sapphire substrate by a metal organic chemical vapor deposition method; whereinsaid production method of the layered body comprises,a pretreatment step supplying an oxygen source gas to the sapphire substrate,{'sup': 20', '−3', '21', '−3, 'a first growing step supplying an oxygen source gas with a raw material gas for growing said group III nitride crystal consisting of a nitrogen source gas and a group III raw material gas to the sapphire substrate carried out with the pretreatment step, thereby growing an initial single crystal layer comprising the ...

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03-09-2015 дата публикации

HIGHLY TRANSPARENT ALUMINUM NITRIDE SINGLE CRYSTALLINE LAYERS AND DEVICES MADE THEREFROM

Номер: US20150247260A1
Принадлежит:

The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline A1N layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200° C. 1. A highly transparent single crystalline AlN layer having a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cmat a wavelength of 265 nm.2. The highly transparent single crystalline AlN layer of claim 1 , the single crystalline AlN layer having a refractive index in the c-axis direction larger than the refractive index in the a-axis direction claim 1 , wherein the difference between the refractive indices is in the range of 0.05 to 0.15 at a wavelength of 265 nm.3. The highly transparent single crystalline AlN layer of claim 1 , the single crystalline AlN layer having a density of defects claim 1 , originating from inclusions with maximum outer diameter ranging from 1 to 200 μm claim 1 , of less than or equal to 50 cm claim 1 , and wherein the principal surface area is larger than or equal to 100 mm claim 1 , and wherein the thickness of the single crystalline AlN layer ranges from 0.05 to 2.0 mm.4. The highly transparent single crystalline AlN layer of claim 1 , wherein the sum of Si claim 1 , O claim 1 , C claim 1 , and B impurity concentrations is less than or equal ...

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20-06-2019 дата публикации

Optical semiconductor element

Номер: US20190189834A1
Автор: Toru Kinoshita
Принадлежит: Stanley Electric Co Ltd

An optical semiconductor element comprises: an AlN substrate; an n-type semiconductor layer composed of an AlGaN layer, the AlGaN layer being grown on the AlN substrate and being pseudomorphic with the AlN substrate, an Al composition or the AlGaN layer being reduced with an increase in distance from the AlN substrate; an active layer which is grown on the n-type semiconductor layer; and a p-type semiconductor layer which is grown on the active layer.

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12-08-2021 дата публикации

OPTICAL SEMICONDUCTOR ELEMENT COMPRISING N-TYPE ALGAN GRADED LAYER

Номер: US20210249555A1
Автор: Kinoshita Toru
Принадлежит: STANLEY ELECTRIC CO., LTD.

An optical semiconductor element includes a single crystal AlN substrate; an n-type semiconductor layer having an AlGaN layer, the AlGaN layer being grown on the AlN substrate and being pseudomorphic with the AlN substrate, an Al composition of the AlGaN layer being reduced with an increase in distance from the AlN substrate; an active layer grown on the n-type semiconductor layer and having a multiple quantum well structure which includes a plurality of well layers and barrier layers; and a p-type semiconductor layer which is grown on the active layer. The single crystal AlN substrate has a dislocation density being 10cmor less. 2. The optical semiconductor element according to claim 1 , wherein{'sub': x1', '1-x1, 'the first composition gradient layer has a composition of AlGaN with an Al composition x1 of 0.95 to 1 at an interface on the single crystal AlN substrate side.'}3. The optical semiconductor element according to claim 1 , whereinthe second composition gradient layer has a same Al composition on a side of the first composition gradient layer as that of the first composition gradient layer on a side of the second composition gradient layer.4. The optical semiconductor element according to claim 1 , whereinone surface of the first composition gradient layer is in contact with the second composition gradient layer, and the other surface of the first composition gradient layer is in contact with the single crystal AlN substrate.5. The optical semiconductor element according to claim 1 , further comprising a buffer layer provided between the single crystal AlN substrate and the first composition gradient layer whereinone surface of the first composition gradient layer is in contact with the second composition gradient layer, and the other surface of the first composition gradient layer is in contact with the buffer layer,the buffer layer is in contact with the single crystal AlN substrate.6. The optical semiconductor element according to claim 1 , whereinthe ...

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25-07-2019 дата публикации

Group iii nitride stacked body, and semiconductor device having the stacked body

Номер: US20190229237A1
Принадлежит: Stanley Electric Co Ltd

Provided is a group III nitride stacked body having an n-type AlXGa1-XN (0.5≤X<1) layer formed on an AlN single crystal substrate while being lattice-matched to the AlN single crystal substrate wherein the n-type AlXGa1-XN (0.5≤X<1) layer has at least a stacked structure in which a first n-type AlX1Ga1-X1N (0.5≤X1<1) layer, a second n-type AlX2Ga1-X2N (0.5≤X2<1) layer, and a third n-type AlX3Ga1-X3N (0.5≤X3<1) layer are stacked in this order from the AlN single crystal substrate side, and X1, X2, and X3 indicating the Al compositions of the respective layers satisfy 0<|X1−X2|≤0.1, and satisfy 0<|X2−X3|≤0.1.

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03-09-2015 дата публикации

Aluminum Nitride Substrate and Group-III Nitride Laminate

Номер: US20150249122A1
Принадлежит:

A substrate includes aluminum nitride, wherein the aluminum nitride substrate has on at least a surface thereof an aluminum nitride single-crystal layer having as a principal plane a plane that is inclined 0.05° to 0.40° in the m-axis direction from the (0001) plane of a wurzite structure. 1. An aluminum nitride substrate , wherein said aluminum nitride substrate comprises at least on a surface thereof an aluminum nitride single crystal layer having a principal plane inclined to “m” axis direction within a range of 0.05° or more and 0.40° or less from (0001) plane of a wurzite structure.2. The aluminum nitride substrate as set forth in claim 1 , wherein said principal plane is inclined to “a” axis direction within a range of 0.00° or more and 0.40° or less from (0001) plane of the wurzite structure.3. A group III nitride layered product comprising AlGaInBN layer which satisfies a composition shown by AlGaInBN claim 1 , wherein x claim 1 , y claim 1 , and z are independently a rational number of 0 or more and less than 0.5 respectively claim 1 , and a sum of x claim 1 , y claim 1 , and z is less than 0.5 claim 1 , on the principal plane of the aluminum nitride single crystal layer of the aluminum nitride substrate as set forth in .4. The group III nitride layered product as set forth in wherein the AlGaInBN layer has a composition claim 3 , in said AlGaInBN claim 3 , x being a rational number lager than 0 and less than 0.5 claim 3 , and y and z being a rational number of 0 or more and less than 0.5 claim 3 , andin photoluminescence measurement at 300 K of said AlGaInBN layer, a peak corresponding to band gap of said AlGaInBN layer of 4.56 eV or more and less than 5.96 eV is observed, and full width at half maximum is 225 meV or less.5. The group III nitride layered product as set forth in claim 3 , wherein AlN layer claim 3 , x claim 3 , y and z being 0 in said AlGaInBN claim 3 , is directly formed on the principal plane of said aluminum nitride single crystal layer ...

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22-10-2015 дата публикации

Composite wavelength conversion powder, resin composition containing composite wavelength conversion powder, and light emitting device

Номер: US20150299566A1
Принадлежит: SUMITOMO OSAKA CEMENT CO LTD

A composite wavelength conversion powder and a resin composition containing a composite wavelength conversion powder which have high utilization efficiency of light and high utilization efficiency of a constituent material, and are able to make highly efficient light emission and high reliability compatible are provided. The composite wavelength conversion powder is formed by dispersing phosphor particles having a refractive index of 1.6 or more in matrix particles containing fine magnesium fluoride particles or fine calcium fluoride particles. In addition, a light emitting device which is able to improve utilization efficiency of light due to the phosphor particles excited by primary irradiation light emitted by a light emitting element, is able to improve the optical output of light emission by increasing an the amount of secondary irradiation light generated from the phosphor particles, and is able to suppress limit the occurrence of color unevenness or a color variation device in light emitted to the outside of the device is provided. A light emitting device ( 1 ) includes a substrate ( 2 ), a light emitting element ( 3 ) mounted on a front surface of the substrate ( 2 ), and a light transmitting member ( 4 ) formed to cover the light emitting element ( 3 ), and the light transmitting member ( 4 ) contains phosphor particles having an average particle diameter of 500 nm or less, and composite wavelength conversion particles ( 12 ) formed of inorganic particles having an average particle diameter of 500 nm or less which are transparent with respect to visible light.

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24-10-2019 дата публикации

GROUP III NITRIDE LAMINATE AND VERTICAL SEMICONDUCTOR DEVICE HAVING THE LAMINATE

Номер: US20190323146A1
Принадлежит: STANLEY ELECTRIC CO., LTD.

A group III nitride laminate having monocrystalline n-type AlGaN (0.7≤X≤1.0) and an electrode is provided. The group III nitride laminate is characterized in that an n-type contact layer made of (AlGa)O(0.0≤Y<0.3) is provided between the monocrystalline n-type AlGaN (0.7≤X≤1.0) and the electrode. Furthermore, a vertical semiconductor device including the above-described group III nitride laminate is provided. 1. A group III nitride laminate comprising monocrystalline n-type AlGaN (0.7≤X≤1.0) and an electrode , wherein an n-type contact layer made of (AlGa)O(0.0≤Y<0.3) is provided between the monocrystalline n-type AlGaN (0.7≤X≤1.0) and the electrode.2. The group III nitride laminate according to claim 1 , wherein the n-type contact layer contains at least one n-type dopant selected from Si and Sn claim 1 , and a concentration of the n-type dopant is 10to 10cm.3. The group III nitride laminate according to claim 1 , wherein the n-type contact layer is a single crystal layer or a polycrystal layer.4. The group III nitride laminate according to claim 1 , wherein the monocrystalline n-type AlGaN (0.7≤X≤1.0) is an n-type AlN.5. The group III nitride laminate according to claim 1 , wherein a surface of the monocrystalline n-type AlGaN (0.7≤X≤1.0) on which the electrode is formed is a nitrogen polar face.6. A vertical semiconductor device comprising the group III nitride laminate according to .7. A method for producing the group III nitride laminate and the vertical semiconductor device according to claim 1 , characterized by forming an n-type contact layer made of (AlGa)O(0.0≤Y<0.3) on monocrystalline n-type AlGaN (0.7≤X≤1.0) claim 1 , and forming an electrode on the n-type contact layer.8. The method for producing the group III nitride laminate and the vertical semiconductor device according to claim 7 , wherein the n-type electrode is formed on a nitrogen polar face of the monocrystalline n-type AlGaN (0.7≤X≤1.0).9. The method for producing the group III nitride ...

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27-02-2014 дата публикации

Highly transparent aluminum nitride single crystalline layers and devices made therefrom

Номер: WO2014031119A1

The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline AlN layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30 % of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200°C.

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13-05-2015 дата публикации

Method for manufacturing optical element

Номер: EP2634294A4
Принадлежит: Tokuyama Corp

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26-04-2022 дата публикации

Heat accumulation hot air heater

Номер: JP2022064550A
Принадлежит: KANSAI SANGYO KK

【課題】簡単な構成で暖房運転時間を延長可能な蓄熱温風暖房機を提供する。 【解決手段】蓄熱温風暖房機1は、燃料室21を有する燃焼炉2と、燃焼炉2へ空気を導入するための送風機7と、を備え、燃焼室2は、燃料Fの燃焼が行われる燃焼部21aと、多数の蓄熱体10を収容する蓄熱部21bと、を有し、蓄熱部21bは下流側において燃焼部21aと連通し、燃焼部21aと蓄熱部21bとの間には蓄熱板11が配置されている。燃焼炉2へ導入された空気の一部は蓄熱部21bを上流側から下流側へ多数の蓄熱体10の隙間を通って流れる。 【選択図】図1

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13-02-1985 дата публикации

Automatic device for changing spinning pack of melt spinning machine

Номер: JPS6028507A

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

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16-04-2005 дата публикации

Airtight device of elevator doors

Номер: TW200513432A
Принадлежит: Toshiba Elevator Kk

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29-04-2020 дата публикации

Method for manufacturing optical element and optical element multilayer body

Номер: EP2634294B1
Принадлежит: Tokuyama Corp

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29-05-2009 дата публикации

Sealing device for elevator

Номер: MY138179A
Принадлежит: Toshiba Elevator Kk

A SEALING DEVICE FOR AN ELEVATOR DOOR INCLUDES A DOORWAY MEMBER (10), DOORS (6A, 6B), A MOVABLE MEMBER (32), A PUSH-DOWN MECHANISM (36, 37) AND A SEALING MECHANISM (30). THE DOORWAY MEMBER (10) IS PROVIDED FOR A GATE. THE DOORS (6A, 6B) OPEN OR CLOSE ALONG THE DOORWAY MEMBER (10). THE MOVABLE MEMBER (32) IS SET HORIZONTALLY AND PROVIDED TO BE MOVABLE IN A VERTICAL DIRECTION IN THE DOORWAY MEMBER (10), AND IT IS URGED UPWARDS BY AN URGING UNIT (35). THE PUSH-DOWN MECHANISM (36, 37) PUSHES DOWN THE MOVABLE MEMBER (32) AGAINTS THE FORCE OF THE URGING UNIT (35) JUST BEFOR THE DOORS (6A, 6B) ARE CLOSED. THE SEALING MECHANISM (30) IS KEPT NON-CONTACT WITH THE DOORS (6A, 6B) WHILE THEY ARE MOVING, AND SEALS THE GAP BETWEEN THE DOORS (6A, 6B) AND THE DOORWAY MEMBER (10) AS IT IS BROUGHT INTO CONTACT WITH UPPER SECTION OF THE DOORS (6A, 6B) WHEN THE MOVABLE MEMBER (32) IS PUSHED DOWN BY THE PUSH-DOWN MECHANISM (36, 37).

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19-01-2022 дата публикации

Aluminum nitride substrate and group-iii nitride laminate

Номер: EP2896725B1
Принадлежит: Tokuyama Corp

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30-11-1993 дата публикации

Acrylic copolymer, process for the preparation of the same and use application of the same

Номер: CA2042587C
Принадлежит: Mitsui Petrochemical Industries Ltd

ABSTRACT OF THE DISCLOSURE The acrylic copolymer of the present invention is an acrylic copolymer comprising recurring units derived from a (meth)acrylic ester compound and recurring units derived from a vinyl compound having -SO3R (wherein R represents a hydrogen atom or a lower alkyl group) or having an acceptable salt thereof, wherein at least a part of ester groups of the (meth)acrylic ester compound is substituted by a group having recurring units derived from a (meth)acrylic ester. The present invention further provides a process for the preparation of the acrylic copolymer and use application of the acrylic copolymer utilizing its adhesion properties.

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22-11-2023 дата публикации

Vertical-type ultraviolet light-emitting diode

Номер: EP3425684B1
Автор: Toru Kinoshita
Принадлежит: Stanley Electric Co Ltd

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29-06-2017 дата публикации

窒化アルミニウム単結晶積層体、該積層体の製造方法、及び該積層体を利用した半導体素子の製造方法

Номер: JP2017117972A
Принадлежит: Tokuyama Corp

【課題】転位密度が低く、反りが小さく、耐薬品性が高く、半導体素子を製造するに際して、裏面を被覆保護することなく高品質の半導体素子を製造できる窒化アルミニウム単結晶積層体(基板)を提供する。【解決手段】窒化アルミニウム単結晶基板の窒素極性面上に、窒化アルミニウム単結晶層が直接積層した積層構造を有する窒化アルミニウム単結晶積層体であって、該積層体の表面および裏面の全面が共にアルミニウム極性面であり、表面および裏面の転位密度が共に106cm−2以下であることを特徴とする窒化アルミニウム単結晶積層体である。【選択図】図1

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21-04-2000 дата публикации

2バンドチューナ

Номер: JP2000115008A
Принадлежит: Alps Electric Co Ltd

(57)【要約】 【課題】 周波数帯域の広いバンドにおける利得偏差を 少なくする。 【解決手段】 高周波増幅器7は入力端子と出力端子と 基準端子とを有する増幅素子8と、基準端子とグランド との間に接続されて基準端子とグランドとの間にバイア ス電圧を発生するバイアス電圧発生手段9とを有し、第 一の放送信号または第二の放送信号は入力端子に入力さ れ、バイアス電圧発生手段9には基準端子から増幅素子 8の動作電流を流してバイアス電圧を発生させ、バイア ス電圧によって増幅素子8に負帰還をかけるようにし、 第一の放送信号を受信するときにはバイアス電圧発生手 段8が実質的に抵抗素子9b,9cで構成されるように し、第二の放送信号を受信するときにはバイアス電圧発 生手段8が実質的にインダクタンス素子9aで構成され るようにした。

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07-02-2019 дата публикации

部材取付構造及びこれを備える粉砕装置

Номер: JP2019019837A
Принадлежит: KANSAI SANGYO KK

【課題】部材の取外を容易にできる部材取付構造を備える粉砕装置を提供する。【解決手段】粉砕装置1は、雌ねじ部31cを有する回転体3と、回転体3に取り付けられるスクリュ4と、雌ねじ部31cに螺合可能な取付ボルトと、を備え、スクリュ4には挿通孔41が設けられている。スクリュ4は、挿通孔41に挿通された取付ボルトを雌ねじ部31cに螺着させることにより回転体3に取り付けられる。挿通孔41には、取付ボルトよりも大きなネジ径を有する抜きボルト8と螺合可能な雌ねじ部41cが設けられている。【選択図】図3

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10-08-2023 дата публикации

エレベータのヘッダーケース

Номер: JP2023111151A
Принадлежит: Toshiba Elevator Co Ltd

【課題】エレベータの構成の複雑化を抑制することができるヘッダーベースを得る。 【解決手段】実施形態のエレベータのヘッダーケースは、エレベータの乗り場ドアの上方に配置され、乗り場ドアと一体に移動するドアハンガーと外周部に弾性体を有しドアハンガーに連結されたハンガーローラとを収容する。ヘッダーケースは、ヘッダーベースを備える。ヘッダーベースには、ハンガーレールが設けられる。ハンガーレールは、ハンガーローラの下側に位置し弾性体と接触しハンガーローラが移動する。ヘッダーベースには、孔が設けられている。孔は、ハンガーレール上に位置した弾性体よりも少なくとも一部が下方に位置し、融解した弾性体を排出する。 【選択図】図4

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15-10-2003 дата публикации

落下物防止装置

Номер: JP2003292274A
Принадлежит: Toshiba Elevator Co Ltd

(57)【要約】 【課題】 落下物の危険がなく、乗りかご閉じ込め事故 をなくすることにある。 【解決手段】 構造物1又は乗りかご2下部に上面開口 部11を有する受け箱10を回動可能に支持する一方、 受け箱を開閉するための回動駆動力を発生する駆動装置 22を設置する。この駆動装置に接続される回転軸31 にはトグルリンク機構を構成するリンク部材33’、3 3”をもつ駆動力伝達機構30を設け、回転軸の駆動力 をリンク部材を介して受け箱に伝達し、受け箱を開閉す る。受け箱が開く方向及び閉じる方向に復元力を付与す る双方向安定装置40を設け、受け箱の開閉状態を安定 に保持する。また、受け箱上部側に当接部材61、当該 受け箱に対面する乗りかご下部面部又は構造物面部に傾 斜をもつ被当接部位62を設け、乗りかごの昇降時に被 当接部位が当接部材を押し退けるようにし、制御装置の 一部の故障に対しても乗りかごを最寄階を誘導する。

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02-09-2010 дата публикации

階段支持材及びこれを用いた仮設階段

Номер: JP2010189993A
Автор: Toru Kinoshita, 徹 木下
Принадлежит: Pica Corp

【課題】階段支持材の踏み板側の面につかみ金具を締結するボルトのボルト頭を陥没させて回り止めをする凹溝を設けることにより、別途回り止めを施すことなくつかみ金具を階段支持材に締結でき、仮設階段を積み重ねた時に上下段に位置する踏み板とボルト頭とが接触せず、踏み板の大きさや形状の制限をなくすことができる。 【解決手段】踏み板2を取り付ける中央壁3の幅方向両端から踏み板2とは反対側へフランジ4を延設して断面略コ字状に形成し、中央壁3の長手方向端部に、断面略コ字状内方に配置されるつかみ金具5をボルト6で締結するボルト孔7を形成し、中央壁3の踏み板2側の面にボルト6のボルト頭6aを陥没させて回り止めをするボルト頭2面幅の凹溝8を形成している。 【選択図】図1

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11-01-2024 дата публикации

紫外半導体発光素子

Номер: JP2024002365A
Принадлежит: Stanley Electric Co Ltd

【課題】駆動して深紫外光を出射しているか否かを使用者が容易に確認可能な紫外半導体発光素子を提供することを目的としている。【解決手段】本発明による紫外半導体発光素子は、単結晶AlN基板と、前記単結晶AlN基板上に形成されたn型AlGaN層と、前記n型AlGaN層上に形成され、発光ピーク波長が250nm以上280nm以下である活性層と、前記活性層上に形成されたp型AlGaN層と、を有し、前記単結晶AlN基板中のC濃度は3×1017atoms/cm3以上である。【選択図】図1

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06-06-2003 дата публикации

多層印刷配線板

Номер: JP2003163463A
Автор: Toru Kinoshita, 徹 木下
Принадлежит: Victor Company of Japan Ltd

(57)【要約】 【目的】 内層回路パターンと外層回路パターンとを電 気的に接続する。 【構成】 絶縁基板2と、前記絶縁基板2の上面,下面 の少なくとも一方の面上に形成した第1の回路パターン 3と、前記第1の回路パターン3を形成した面側の前記 絶縁基板上に、塗布・形成された、内側絶縁層40Bと 外側絶縁層40Aからなり、外側絶縁層は酸化剤に対し て難溶性を示す樹脂の中に前記酸化剤に対して可溶性を 示す炭酸カルシウム4bを分散させ、且つ前記第1の回 路パターン3を露出させるべく制御されたレーザ光によ って接続用有底孔5を表面側から穿設された複合絶縁層 40と、前記酸化剤により前記複合絶縁層の表面及びこ の複合絶縁層に穿設した前記接続用有底孔5の内壁を粗 面化した上に形成した第2の回路パターン7とを備え、 前記接続用有底孔を介して前記第1,2の回路パターン 3,7相互を電気的に接続したことを特徴とする多層印 刷配線板。

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25-11-2010 дата публикации

足場板用巾木

Номер: JP2010265695A
Автор: Toru Kinoshita, 徹 木下
Принадлежит: Pica Corp

【課題】足場板への取付性を容易化し、しかも、着脱可能として足場板の運搬・取扱等の労力負担を軽減し得る足場板用巾木を提供すること。 【解決手段】足場板1の巾方向端部に足場板1の上面から上方へ向けて直立して取り付けられる巾木2であって、該巾木2は、板状の主体部2aと、該主体部2aの下部に一体成形された取付脚部2bとを有する巾木本体2cと、該巾木本体2cを、足場板1に着脱可能に取り付ける取付手段3を備えており、前記取付脚部2bは、前記主体部2aを足場板1の巾方向端部側面から直立した状態で足場板1に取り付けるために、足場板1の巾方向端部の上面と側面とに当接係合する当接部2b1、2b2を備えている。 【選択図】図1

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01-07-2014 дата публикации

複合波長變換粉體、含有複合波長變換粉體的樹脂組成物及發光裝置

Номер: TW201425537A
Принадлежит: SUMITOMO OSAKA CEMENT CO LTD

本發明提供一種光的利用效率及材料自體的利用效率高,且可兼具高效率發光及高可靠度之複合波長變換粉體以及含有複合波長變換粉體的樹脂組成物。此複合波長變換粉體,係在含有氟化鎂微粒子或氟化鈣微粒子之基質粒子中,分散有折射率為1.6以上的螢光體粒子所構成。而且,提供可提高藉由發光元件放射的1次放射光激發之螢光體粒子之光利用效率,可提高因螢光體粒子產生的2次放射光的量增加而發出的光輸出,進一步可抑制放射至裝置外部的光之色斑,顏色變化的產生之發光裝置。此發光裝置(1)具備基板(2)、裝載於基板(2)的表面之發光元件(3)以及被覆發光元件(3)所成的透光性構件(4),其中,透光性構件(4)係含有由平均粒徑500 nm以下的螢光體粒子、以及對紫外線及可見光線為透明之平均粒徑500 nm以下的無機粒子所構成的複合波長變換粒子(12)。

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09-07-2009 дата публикации

エレベータドアの密閉装置

Номер: JP2009149450A
Принадлежит: Toshiba Elevator Co Ltd

【課題】設置スペースを小さくでき、調整が容易で、配線や制御装置が不要で、戸閉時に過大な反力が発生せず、大きな摺動音が生じることもなく、シール部材の摩耗や過大な摩擦力の心配がない耐久性に優れるエレベータドアの密閉装置を提供する。 【解決手段】エレベータの乗降口に設けられた幕板10に、下部にループ状に湾曲するループ部72aを有するゴムシート72を水平に取り付け、このゴムシート72の上部に押さえ板71を取り付け、この押さえ板71をばねで上方に弾性的に付勢し、乗り場ドア6fの戸閉直前に、カム板とカムローラとの係合で前記押さえ板71を前記ばねに抗して下方に押し付け、この押し付けにより前記ゴムシート72を弾性的に撓ませながら乗り場ドア6fの上部と幕板15の折り返し部15cとの間に跨って密着させ、この密着により乗り場ドア6fと幕板15との間の隙間を密閉する。 【選択図】 図16

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28-12-2023 дата публикации

Ultraviolet semiconductor light-emitting element

Номер: US20230420613A1
Принадлежит: Stanley Electric Co Ltd

An object of the present invention is to provide an ultraviolet semiconductor light-emitting element that allows a user to easily confirm whether or not it is driven to emit the deep ultraviolet light. An ultraviolet semiconductor light-emitting element according to the present invention includes a single crystal AlN substrate, an n-type AlGaN layer, an active layer, and a p-type AlGaN layer. The n-type AlGaN layer is formed on the single crystal AlN substrate. The active layer is formed on the n-type AlGaN layer. The active layer has a light emission peak wavelength of 250 nm or more and 280 nm or less. The p-type AlGaN layer is formed on the active layer. The C concentration in the single crystal AlN substrate is 3×10 17 atoms/cm 3 or more.

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08-09-2016 дата публикации

p型GaN層の製造方法、及び該製造方法を利用した半導体デバイスの製造方法

Номер: JP2016164905A
Принадлежит: Tokuyama Corp

【課題】表面が平滑であって、抵抗値が低いp型GaN層であり、さらに、該p型GaN層上に形成した電極の接触抵抗が低くできるp型GaN層の製造方法を提供する。【解決手段】 有機金属気相成長法により、窒素ガスを含むキャリアガスを使用して、AlXGa1−XN(0<X≦1)単結晶層上にp型GaN層を製造する方法であって、前記p型GaN層を、キャリアガス中の窒素ガスの体積流量比が0.1以上0.5未満であり、成長速度が0.03〜0.35μm/hで成長させることを特徴とするp型GaN層の製造の製造方法である。【選択図】図1

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17-04-2024 дата публикации

Light emitting device adapted to emit ultraviolet light

Номер: EP3514265B1
Принадлежит: Stanley Electric Co Ltd

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27-04-1999 дата публикации

マニホールド圧力補償システム

Номер: JPH11115881A
Принадлежит: Mitsubishi Heavy Industries Ltd

(57)【要約】 【課題】マニホールド圧力発信器の装備削減を促進する マニホールド圧力補償システムを提供すること。 【解決手段】ポンプ吐出圧力を発信する発信手段(3) と、この発信手段(3)からのデータを基に求めたポン プの流量と前記ポンプからマニホールドまでの配管抵抗 とを基に圧力損失を計算し、前記ポンプの吐出圧力から 前記圧力損失を差し引いてマニホールド圧力を算出する 演算手段(1)と、この演算手段(1)で算出されたマ ニホールド圧力を基に、前記ポンプのコントローラ (7)を制御する信号を出力する出力手段(1)と、を 具備。

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04-11-2004 дата публикации

積層体およびその製造方法

Номер: JP2004311624A
Принадлежит: Tokuyama Corp

【課題】高温化で長時間保持するというアニ−ル処理を行なった場合でも使用時に抵抗値や抵抗温度係数が経時的に変化しない薄膜抵抗体を提供する。 【解決手段】例えば、基板上に減圧条件下でスパッタ法により窒化アルミニウム薄膜層を形成した後、得られた窒化アルミニウム薄膜層を有する基板を減圧条件下に保ったまま当該基板の窒化アルミニウム薄膜層上に白金、ニッケル、金、アルミニウム及び銅かなる群より選ばれる少なくとも1種の金属からなる金属層を形成することにより得られる、窒化アルミニウムからなる表面を有する基板の当該表面上に白金等の金属層が2.5kgf/mm 2 以上の密着強度で直接接合した積層体を薄膜抵抗体として使用する。 【選択図】 図1

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02-09-2010 дата публикации

仮設階段用踏み板及びこれを用いた仮設階段

Номер: JP2010189994A
Автор: Toru Kinoshita, 徹 木下
Принадлежит: Pica Corp

【課題】踏み板の階段支持材に対向する外側面に突条を設けることにより、踏み板と階段支持材との間で間隙を形成でき、仮設階段を積み重ねる際に階段支持材の間へ踏み板を嵌め込みやすくできる。 【解決手段】略矩形状の板材10と、この板材10の両端に取り付けられる端部材11とを有し、複数本のボルト12で階段支持材9に締結されており、端部材11の階段支持材9に対向する外側面に、階段支持材9との間で間隙dを形成する突条13をボルト孔14の上下それぞれに少なくとも1条設けている。 【選択図】図1

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23-06-2000 дата публикации

接近物体の監視装置および方法

Номер: JP2000172979A
Принадлежит: Mitsubishi Heavy Industries Ltd

(57)【要約】 【課題】 暗闇下における接近物体の監視。 【解決手段】 レーザレーダ手段10で検出される物体 60の位置を時系列処理して該物体60の動きをベクト ル解析し、そのベクトル解析結果に基づいて物体60が 接近していることを判定する。

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16-08-2015 дата публикации

紫外發光二極體及紫外線光源

Номер: TW201532307A
Принадлежит: Tokuyama Corp

本發明係一種紫外發光二極體及紫外線光源,係具有:以具有加以放射光之發光主面的基板,n型層,活性層,及p型層之順序加以層積之層積構造,更且,於p型層上具有p型電極,且於除去p型層,及活性層之一部分的範圍而使其露出之n型層上,具有n型電極之發光二極體,其特徵為,發光峰值波長位於220~350nm之範圍,在25℃中,在驅動電流值150mA之發光輸出密度為10W/cm2以上,驅動電壓值為10V以下之紫外發光二極體。

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28-06-2023 дата публикации

エレベータのシーブ加熱装置およびエレベータのシーブ加熱方法

Номер: JP2023089819A
Принадлежит: Toshiba Elevator Co Ltd

【課題】グリスの固着を防止することができるエレベータのシーブ加熱装置を提供する。【解決手段】実施の形態によるエレベータのシーブ加熱装置30は、シーブ20が配置される内側空間40を画定するカバー31と、カバーの内面に取り付けられ、シーブを加熱するヒータ50と、を備えている。ヒータは、シーブのロープ溝に対向している。【選択図】図3

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