Solid polymer power generation or electrolysis method and system

There are provided: a solid polymer power generation or electrolysis method that does not require injection of energy from the outside and maintenance of a high temperature, and is capable of converting carbon dioxide to a useful hydrocarbon while producing energy, controlling the production amounts of the hydrocarbons or the like and a ratio sorted by kind of the hydrocarbons, improving utilization efficiency of a product, and simplifying equipment for separation and recovery; and a system for implementing the solid polymer power generation or electrolysis method. Carbon dioxide is supplied to the side of one electrode 111 of a reactor 110 having a membrane electrode assembly 113 , hydrogen is supplied to the side of the other electrode 112 , and the amounts of the hydrocarbons produced per unit time and the ratio sorted by kind of the hydrocarbons are changed by controlling a power generation voltage of the reactor 110.

Composite wavelength conversion powder, resin composition containing composite wavelength conversion powder, and light emitting device

A composite wavelength conversion powder and a resin composition containing a composite wavelength conversion powder which have high utilization efficiency of light and high utilization efficiency of a constituent material, and are able to make highly efficient light emission and high reliability compatible are provided. The composite wavelength conversion powder is formed by dispersing phosphor particles having a refractive index of 1.6 or more in matrix particles containing fine magnesium fluoride particles or fine calcium fluoride particles. In addition, a light emitting device which is able to improve utilization efficiency of light due to the phosphor particles excited by primary irradiation light emitted by a light emitting element, is able to improve the optical output of light emission by increasing an the amount of secondary irradiation light generated from the phosphor particles, and is able to suppress limit the occurrence of color unevenness or a color variation device in light emitted to the outside of the device is provided. A light emitting device ( 1 ) includes a substrate ( 2 ), a light emitting element ( 3 ) mounted on a front surface of the substrate ( 2 ), and a light transmitting member ( 4 ) formed to cover the light emitting element ( 3 ), and the light transmitting member ( 4 ) contains phosphor particles having an average particle diameter of 500 nm or less, and composite wavelength conversion particles ( 12 ) formed of inorganic particles having an average particle diameter of 500 nm or less which are transparent with respect to visible light.

N-TYPE ALUMINUM NITRIDE SINGLE-CRYSTAL SUBSTRATE AND VERTICAL NITRIDE SEMICONDUCTOR DEVICE

A vertical nitride semiconductor device includes an n-type aluminum nitride single-crystal substrate having an Si content of 3×10to 1×10cmand a dislocation density of 10cmor less. An ohmic electrode layer is formed on an N-polarity side of the n-type aluminum nitride single-crystal substrate. 1. A n-type aluminum nitride single crystal substrate wherein a Si content is 3×10to 1×10cm , a dislocation density is 10cmor less , and a thickness is 50 to 500 μm.2. A vertical nitride semiconductor device comprising electrode layers on top and bottom of principal planes of the n-type aluminum nitride single crystal substrate as set forth in .3. A vertical Schottky barrier diode comprising an ohmic electrode layer on one principal plane side and a Schottky electrode layer on the other principal plane of the n-type aluminum nitride single crystal substrate in the vertical nitride semiconductor device as set forth in .4. A laminated body stacked with a layer represented by AlGaN claim 1 , wherein X is a rational number satisfying 0.3≦X≦0.8 and having a Si content of 1×10to 5×10cm claim 1 , on at least one principal plane of the n-type aluminum nitride single crystal substrate as set forth in .5. A vertical nitride semiconductor device comprising electrode layers on top and bottom of principal planes of the layered body as set forth in .6. The vertical nitride semiconductor device as set forth in wherein one electrode layer on the layer represented by AlGaN claim 5 , wherein X is a rational number satisfying 0.3≦X≦0.8 is an ohmic electrode layer.7. A vertical Schottky barrier diode wherein one electrode layer on the n-type aluminum nitride single crystal substrate in the vertical nitride semiconductor device as set forth in is a Schottky electrode layer.8. The vertical Schottky barrier diode as set forth in wherein an electric current density is 10Acmor less when a reverse voltage is 100V.9. A production method of the n-type aluminum nitride single crystal substrate as set forth ...

SEALING DEVICE FOR ELEVATOR

A sealing device for an elevator door includes a doorway member, doors, a movable member, a push-down mechanism and a sealing mechanism. The doorway member is provided for a gate. The doors open or close along the doorway member. The movable member is set horizontally and provided to be movable in a vertical direction in the doorway member, and it is urged upwards by an urging unit. The push-down mechanism pushes down the movable member against the force of the urging unit just before the doors are closed. The sealing mechanism is kept non-contact with the doors while they are moving, and seals the gap between the doors and the doorway member as it is brought into contact with upper section of the doors when the movable member is pushed down by the push-down mechanism.

Transparent Inorganic Oxide Dispersion and Iorganic Oxide Particle-Containing Resin Composition, Composition for Sealing Light Emitting Element and Light Emitting element, Hard Coat Film and Optical Functional Film and Optical Component, and Method for Producing Inorganic Oxide Pariticle-Containing Resin

The present invention provides a transparent inorganic oxide dispersion which makes it possible to improve the refractive index and mechanical characteristics and to maintain transparency by modifying the surface of inorganic oxide particles with a surface modifier having one or more reactive functional groups; and an inorganic oxide particle-containing resin composition in which the transparent inorganic oxide dispersion and a resin are compositely integrated by the polymerization reaction, a composition for sealing a light emitting element, a light emitting element, and a method for producing an inorganic oxide particle-containing resin composition; and a hard coat film which has high transparency and makes it possible to improve a refractive index and tenacity, an optical functional film, an optical lens and an optical component. The transparent inorganic oxide dispersion of the present invention comprises inorganic oxide particles which have a surface modified with a surface modifier having one or more reactive functional groups and have a disperse particle diameter of 1 nm or more and 20 nm or less, and a disperse medium, wherein the surface modifier is one or more kinds selected from the group consisting of a silane coupling agent, a modified silicone, and a surfactant.

Method for Manufacturing Optical Element

A method for manufacturing an optical element includes a step wherein an aluminum nitride single crystal layer is formed on an aluminum nitride seed substrate having an aluminum nitride single crystal surface as the topmost surface. A laminated body for an optical element is manufactured by forming an optical element layer on the aluminum nitride single crystal layer, and the aluminum nitride seed substrate is removed from the laminated body. An optical element having, as a substrate, an aluminum nitride single crystal layer having a high ultraviolet transmittance and a low dislocation density is provided.

Vertical-Type Ultraviolet Light-Emitting Diode

A vertical ultraviolet light-emitting diode has, on an aluminum polar plane of an n-type AlN single crystal substrate, a layer represented by n-type AlGaN (wherein X is a rational number satisfying 0.5≤X≤1.0), an active layer, a layer represented by p-type AlGaN (wherein Y is a rational number satisfying 0.5≤Y≤1.0) and a p-type GaN layer in this order and which is equipped with a p-electrode formed on the p-type GaN layer and an n-electrode partially provided on a plane on the opposite side to the aluminum polar plane of the n-type AlN single crystal substrate, preferably an n-electrode formed by providing at least one opening functioning as a light extraction window, wherein the shortest distance between the n-electrode and an arbitrary point in a portion where the n-electrode is not provided, is not more than 400 μm. 1. A vertical ultraviolet light-emitting diode having an emission peak wavelength in range of 210 to 300 nm , comprising:{'sub': X', '1-X', 'Y', '1-Y, 'on an aluminum polar plane of an n-type AlN single crystal substrate, a layer represented by n-type AlGaN, wherein X is a rational number satisfying 0.5≤X≤1.0, an active layer, a layer represented by p-type AlGaN, wherein Y is a rational number satisfying 0.5≤Y≤1.0, and a p-type GaN layer in this order,'}the ultraviolet light-emitting diode is equipped with a p-electrode formed on the p-type GaN layer and an n-electrode partially provided on a plane on the opposite side to the aluminum polar plane of the n-type AlN single crystal substrate, andthe shortest distance between the n-electrode and an arbitrary point in a portion where the n-electrode is not provided, the portion being on the plane on the opposite side, is not more than 400 μm.2. A vertical ultraviolet light-emitting diode having an emission peak wavelength in range of 210 to 300 nm , comprising:{'sub': X', '1-X', 'Y', '1-Y, 'on an aluminum polar plane of an n-type AlN single crystal substrate, a layer represented by n-type AlGaN, wherein x ...

Group III Nitride Laminate and Light Emitting Element Comprising Said Laminate

A group III nitride laminate includes, on an AlN single crystal substrate, a multilayer structure having an AlGaN layer (0 Подробнее

Sealing device for elevator

A sealing device for an elevator door includes a doorway member, doors, a movable member, a push-down mechanism and a sealing mechanism. The doorway member is provided for a gate. The doors open or close along the doorway member. The movable member is set horizontally and provided to be movable in a vertical direction in the doorway member, and it is urged upwards by an urging unit. The push-down mechanism pushes down the movable member against the force of the urging unit just before the doors are closed. The sealing mechanism is kept non-contact with the doors while they are moving, and seals the gap between the doors and the doorway member as it is brought into contact with upper section of the doors when the movable member is pushed down by the push-down mechanism.

Highly transparent aluminum nitride single crystalline layers and devices made therefrom

The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline AlN layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200° C.

N-Type Contact Electrode Comprising a Group III Nitride Semiconductor, and Method Forming Same

A method for forming an n-type contact electrode comprising an n-type nitride semiconductor such as AlInGaN (with x, y, and z being rational numbers that sum to 1.0 and fulfill the relations 0 Подробнее

Transparent zirconia dispersion and zirconia particle-containing resin composition, composition for sealing light emitting element and light emitting element, hard coat film and optical functional film and optical component, and method for producing zirconia particle-containing resin

The present invention provides a transparent inorganic oxide dispersion which makes it possible to improve the refractive index and mechanical characteristics and to maintain transparency by modifying the surface of inorganic oxide particles with a surface modifier having one or more reactive functional groups; and an inorganic oxide particle-containing resin composition in which the transparent inorganic oxide dispersion and a resin are compositely integrated by the polymerization reaction, a composition for sealing a light emitting element, a light emitting element, and a method for producing an inorganic oxide particle-containing resin composition; and a hard coat film which has high transparency and makes it possible to improve a refractive index and tenacity, an optical functional film, an optical lens and an optical component. The transparent inorganic oxide dispersion of the present invention comprises inorganic oxide particles which have a surface modified with a surface modifier ...

Group III nitride laminate and vertical semiconductor device having the laminate

A group III nitride laminate having monocrystalline n-type AlxGa1-xN (0.7≤X≤1.0) and an electrode is provided. The group III nitride laminate is characterized in that an n-type contact layer made of (AlYGa1-Y)2O3 (0.0≤Y<0.3) is provided between the monocrystalline n-type AlxGa1-xN (0.7≤X≤1.0) and the electrode. Furthermore, a vertical semiconductor device including the above-described group III nitride laminate is provided.

N-type aluminum nitride single-crystal substrate and vertical nitride semiconductor device

A vertical nitride semiconductor device includes an n-type aluminum nitride single-crystal substrate having an Si content of 3×10 17 to 1×10 20 cm −3 and a dislocation density of 10 6 cm −2 or less. An ohmic electrode layer is formed on an N-polarity side of the n-type aluminum nitride single-crystal substrate.

Production Method of a Layered Body

A production method of a layered body having a single crystal layer including a group III nitride having a composition AlXGaYInZN (wherein, X, Y and Z are rational numbers respectively satisfying 0.9X1.0, 0.0Y0.1, 0.0Z0.1, and X+Y+Z=1.0) includes a first growing step supplying an oxygen source gas to a sapphire substrate with a nitrogen source gas and a group III raw material gas which is a raw material gas for growing the group III nitride single crystal, thereby growing an initial single crystal layer comprising the group III nitride satisfying the composition and comprising oxygen in a concentration of 1×1020 cm3 or more and 5×1021 cm3 or less in a thickness of 15 nm or more and 40 nm or less on the sapphire substrate; and a second growing step of supplying the raw material gas without the oxygen source gas, or supplying the oxygen source gas in a less amount than the first growing step together with the raw material gas onto the initial single crystal layer, thereby growing the second ...

COMPOSITE CERAMIC POWDER, PROCESS OF PRODUCING THE SAME, AND SOLID-OXIDE FUEL CELL

A composite ceramic powder, which is excellent in uniform distribution at a nanometer level, composition controllability, and generation of oxygen ions or electron conductivity, a process of producing the composite ceramic powder, and a solid-oxide fuel cell, are provided. The composite ceramic powder includes oxide expressed by A1-xBxC1-yDyO3 (where A represents one or two elements selected from the group consisting of La and Sm; B represents one or two or more elements selected from the group consisting of Sr, Ca, and Ba; C represents one or two elements selected from the group consisting of Co and Mn; D represents one or two elements selected from the group consisting of Fe and Ni; and x and y satisfy 0.1≦x≦0.5 and 0≦y≦0.3) or nickel oxide and zirconia. Here, a neutralized precipitate is produced by adding a zirconia acidic dispersion containing zirconia particles formed of yttria-stabilized zirconia and nickel ions or ions of one or two or more elements selected from the group consisting ...

N-Type Aluminum Nitride Monocrystalline Substrate

A silicon-doped n-type aluminum nitride monocrystalline substrate wherein, at a photoluminescence measurement at 23° C., a ratio (I1/I2) between the emission spectrum intensity (I1) having a peak within 370 to 390 nm and the emission peak intensity (I2) of the band edge of aluminum nitride is 0.5 or less; a thickness is from 25 to 500 μm; and a ratio (electron concentration/silicon concentration) between the electron concentration and the silicon concentration at 23° C. is from 0.0005 to 0.001.

SOLID POLYMER POWER GENERATION OR ELECTROLYSIS METHOD AND SYSTEM

There are provided: a solid polymer power generation or electrolysis method that does not require injection of energy from the outside and maintenance of a high temperature, and is capable of converting carbon dioxide to a useful hydrocarbon while producing energy, controlling the production amounts of the hydrocarbons or the like and a ratio sorted by kind of the hydrocarbons, improving utilization efficiency of a product, and simplifying equipment for separation and recovery; and a system for implementing the solid polymer power generation or electrolysis method. Carbon dioxide is supplied to the side of one electrode 111 of a reactor 110 having a membrane electrode assembly 113 , hydrogen is supplied to the side of the other electrode 112 , and the amounts of the hydrocarbons produced per unit time and the ratio sorted by kind of the hydrocarbons are changed by controlling a power generation voltage of the reactor 110.

Vertical-type ultraviolet light-emitting diode

A vertical ultraviolet light-emitting diode has, on an aluminum polar plane of an n-type AlN single crystal substrate, a layer represented by n-type AlXGa1-XN (wherein X is a rational number satisfying 0.5≤X≤1.0), an active layer, a layer represented by p-type AlYGa1-YN (wherein Y is a rational number satisfying 0.5≤Y≤1.0) and a p-type GaN layer in this order and which is equipped with a p-electrode formed on the p-type GaN layer and an n-electrode partially provided on a plane on the opposite side to the aluminum polar plane of the n-type AlN single crystal substrate, preferably an n-electrode formed by providing at least one opening functioning as a light extraction window, wherein the shortest distance between the n-electrode and an arbitrary point in a portion where the n-electrode is not provided, is not more than 400 μm.

Group III nitride stacked body, and semiconductor device having the stacked body

Provided is a group III nitride stacked body having an n-type AlXGa1-XN (0.5≤X<1) layer formed on an AlN single crystal substrate while being lattice-matched to the AlN single crystal substrate wherein the n-type AlXGa1-XN (0.5≤X<1) layer has at least a stacked structure in which a first n-type AlX1Ga1-X1N (0.5≤X1<1) layer, a second n-type AlX2Ga1-X2N (0.5≤X2<1) layer, and a third n-type AlX3Ga1-X3N (0.5≤X3<1) layer are stacked in this order from the AlN single crystal substrate side, and X1, X2, and X3 indicating the Al compositions of the respective layers satisfy 0<|X1−X2|≤0.1, and satisfy 0<|X2−X3|≤0.1.

Optical semiconductor element comprising n-type algan graded layer

An optical semiconductor element comprises: an AlN substrate; an n-type semiconductor layer composed of an AlGaN layer, the AlGaN layer being grown on the AlN substrate and being pseudomorphic with the AlN substrate, an Al composition or the AlGaN layer being reduced with an increase in distance from the AlN substrate; an active layer which is grown on the n-type semiconductor layer; and a p-type semiconductor layer which is grown on the active layer.

Sealing device for elevator

A sealing device for an elevator door includes a doorway member, doors, a movable member, a push-down mechanism and a sealing mechanism. The doorway member is provided for a gate. The doors open or close along the doorway member. The movable member is set horizontally and provided to be movable in a vertical direction in the doorway member, and it is urged upwards by an urging unit. The push-down mechanism pushes down the movable member against the force of the urging unit just before the doors are closed. The sealing mechanism is kept non-contact with the doors while they are moving, and seals the gap between the doors and the doorway member as it is brought into contact with upper section of the doors when the movable member is pushed down by the push-down mechanism.

Layered body having a single crystal layer

A layered body having a single crystal layer including a group III nitride having a composition Al x Ga y In z N (wherein, X, Y and Z are rational numbers respectively satisfying 0.9≦X≦1.0, 0.0≦Y≦0.1, 0.0≦Z≦0.1, and X+Y+Z=1.0) on a sapphire substrate. The layered body includes an initial single crystal layer that includes the group III nitride composition, an oxygen concentration of 1×10 20 cm −3 or more and 5×10 21 cm−3 or less and a thickness of 15 nm or more and 40 nm or less on the sapphire substrate and a second group III nitride single crystal layer including the group III nitride composition and having a reduced oxygen concentration than the initial single crystal layer.

N-type contact electrode formed on an N-type semiconductor layer and method of forming same using a second metal electrode layer heat-treated after being formed on a first, heat-treated metal electrode layer

A method for forming an n-type contact electrode, which includes an n-type nitride semiconductor such as AlxInyGazN (with x, y, and z being rational numbers that sum to 1.0 and fulfill the relations 0 Подробнее

Production method of a layered body

Disclosed is a novel method for group III polarity growth on a sapphire substrate. Specifically disclosed is a method for producing a laminate wherein a group III nitride single crystal layer is laminated on a sapphire substrate by an MOCVD method. The method for producing a laminate comprises: a pretreatment step in which an oxygen source gas is supplied onto the sapphire substrate; a first growth step in which an initial single crystal layer that contains oxygen at a concentration of 5×1020 cm3 or more but 5×1021 cm3 or less is grown with a thickness of 3 nm or more but less than 15 nm by supplying the oxygen source gas onto the sapphire substrate together with a starting material gas for the growth of the group III nitride; and a second growth step in which a group III nitride single crystal layer that is reduced in the oxygen concentration in comparison to the initial single crystal layer is grown by supplying the starting material gas onto the initial single crystal layer without supplying ...

P-type group III nitride semiconductor and group III nitride semiconductor element

This invention provides a p-type group III nitride semiconductor, with good p-type properties, having a composition expressed by AlXGaYInZN in which each of X, Y and Z indicates a rational number satisfying a relationship of X+Y+Z=1.0, even if Al content is as high as 1.0>X0.5. It is achieved that a proportion of a hole concentration at 30° C. to an acceptor impurity atom concentration is 0.001 or more in the p-type group III nitride semiconductor of the invention, by doping acceptor impurity atoms such as Mg in concentration of 5×1018 to 1×1020 cm3 using the method, for example, MOCVD with attention not to incorporate an impurity atom other than the acceptor impurity atom or not to form dislocation in the crystal when producing the group III nitride semiconductor expressed by the above composition.

N-type aluminum nitride monocrystalline substrate

A silicon-doped n-type aluminum nitride monocrystalline substrate wherein, at a photoluminescence measurement at 23° C., a ratio (I1/I2) between the emission spectrum intensity (I1) having a peak within 370 to 390 nm and the emission peak intensity (I2) of the band edge of aluminum nitride is 0.5 or less; a thickness is from 25 to 500 μm; and a ratio (electron concentration/silicon concentration) between the electron concentration and the silicon concentration at 23° C. is from 0.0005 to 0.001.

Sealing device for elevator

A sealing device for an elevator door includes a doorway member, doors, a movable member, a push-down mechanism and a sealing mechanism. The doorway member is provided for a gate. The doors open or close along the doorway member. The movable member is set horizontally and provided to be movable in a vertical direction in the doorway member, and it is urged upwards by an urging unit. The push-down mechanism pushes down the movable member against the force of the urging unit just before the doors are closed. The sealing mechanism is kept non-contact with the doors while they are moving, and seals the gap between the doors and the doorway member as it is brought into contact with upper section of the doors when the movable member is pushed down by the push-down mechanism.

Sealing device for elevator

A sealing device for an elevator door includes a doorway member, doors, a movable member, a push-down mechanism and a sealing mechanism. The doorway member is provided for a gate. The doors open or close along the doorway member. The movable member is set horizontally and provided to be movable in a vertical direction in the doorway member, and it is urged upwards by an urging unit. The push-down mechanism pushes down the movable member against the force of the urging unit just before the doors are closed. The sealing mechanism is kept non-contact with the doors while they are moving, and seals the gap between the doors and the doorway member as it is brought into contact with upper section of the doors when the movable member is pushed down by the push-down mechanism.

Aluminum nitride substrate and group-III nitride laminate

A substrate includes aluminum nitride, wherein the aluminum nitride substrate has on at least a surface thereof an aluminum nitride single-crystal layer having as a principal plane a plane that is inclined 0.05° to 0.40° in the m-axis direction from the (0001) plane of a wurzite structure.

P-TYPE GROUP III NITRIDE SEMICONDUCTOR AND GROUP III NITRIDE SEMICONDUCTOR ELEMENT

This invention provides a p-type group III nitride semiconductor, with good p-type properties, having a composition expressed by AlxGayInzN in which each of X, Y and Z indicates a rational number satisfying a relationship of X+Y+Z=1.0, even if Al content is as high as 1.0>X≧0.5. It is achieved that a proportion of a hole concentration at 30° C. to an acceptor impurity atom concentration is 0.001 or more in the p-type group III nitride semiconductor of the invention, by doping acceptor impurity atoms such as Mg in concentration of 5×1018 to 1×1020 cm−3 using the method, for example, MOCVD with attention not to incorporate an impurity atom other than the acceptor impurity atom or not to form dislocation in the crystal when producing the group III nitride semiconductor expressed by the above composition.

Production Method of a Layered Body

Disclosed is a novel method for group III polarity growth on a sapphire substrate. Specifically disclosed is a method for producing a laminate wherein a group III nitride single crystal layer is laminated on a sapphire substrate by an MOCVD method. The method for producing a laminate comprises: a pretreatment step in which an oxygen source gas is supplied onto the sapphire substrate; a first growth step in which an initial single crystal layer that contains oxygen at a concentration of 5×10cmor more but 5×10cmor less is grown with a thickness of 3 nm or more but less than 15 nm by supplying the oxygen source gas onto the sapphire substrate together with a starting material gas for the growth of the group III nitride; and a second growth step in which a group III nitride single crystal layer that is reduced in the oxygen concentration in comparison to the initial single crystal layer is grown by supplying the starting material gas onto the initial single crystal layer without supplying the oxygen source thereto, or alternatively by supplying the oxygen source, together with the starting material gas, at a lower supply rate than that in the first growth step. 1. A production method of a layered body having a single crystal layer comprising a group III nitride satisfying a composition shown by AlGaInN (wherein , X , Y and Z are rational numbers respectively satisfying 0.9≦X≦1.0 , 0.0≦Y≦0.1 , 0.0≦Z≦0.1 , and X+Y+Z=1.0) on a sapphire substrate by a metal organic chemical vapor deposition method; whereinsaid production method of the layered body comprises,a pretreatment step supplying an oxygen source gas to the sapphire substrate,{'sup': 20', '−3', '21', '−3, 'a first growing step supplying an oxygen source gas with a raw material gas for growing said group III nitride crystal consisting of a nitrogen source gas and a group III raw material gas to the sapphire substrate carried out with the pretreatment step, thereby growing an initial single crystal layer comprising the ...

HIGHLY TRANSPARENT ALUMINUM NITRIDE SINGLE CRYSTALLINE LAYERS AND DEVICES MADE THEREFROM

The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline A1N layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200° C. 1. A highly transparent single crystalline AlN layer having a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cmat a wavelength of 265 nm.2. The highly transparent single crystalline AlN layer of claim 1 , the single crystalline AlN layer having a refractive index in the c-axis direction larger than the refractive index in the a-axis direction claim 1 , wherein the difference between the refractive indices is in the range of 0.05 to 0.15 at a wavelength of 265 nm.3. The highly transparent single crystalline AlN layer of claim 1 , the single crystalline AlN layer having a density of defects claim 1 , originating from inclusions with maximum outer diameter ranging from 1 to 200 μm claim 1 , of less than or equal to 50 cm claim 1 , and wherein the principal surface area is larger than or equal to 100 mm claim 1 , and wherein the thickness of the single crystalline AlN layer ranges from 0.05 to 2.0 mm.4. The highly transparent single crystalline AlN layer of claim 1 , wherein the sum of Si claim 1 , O claim 1 , C claim 1 , and B impurity concentrations is less than or equal ...

Optical semiconductor element

An optical semiconductor element comprises: an AlN substrate; an n-type semiconductor layer composed of an AlGaN layer, the AlGaN layer being grown on the AlN substrate and being pseudomorphic with the AlN substrate, an Al composition or the AlGaN layer being reduced with an increase in distance from the AlN substrate; an active layer which is grown on the n-type semiconductor layer; and a p-type semiconductor layer which is grown on the active layer.

OPTICAL SEMICONDUCTOR ELEMENT COMPRISING N-TYPE ALGAN GRADED LAYER

An optical semiconductor element includes a single crystal AlN substrate; an n-type semiconductor layer having an AlGaN layer, the AlGaN layer being grown on the AlN substrate and being pseudomorphic with the AlN substrate, an Al composition of the AlGaN layer being reduced with an increase in distance from the AlN substrate; an active layer grown on the n-type semiconductor layer and having a multiple quantum well structure which includes a plurality of well layers and barrier layers; and a p-type semiconductor layer which is grown on the active layer. The single crystal AlN substrate has a dislocation density being 10cmor less. 2. The optical semiconductor element according to claim 1 , wherein{'sub': x1', '1-x1, 'the first composition gradient layer has a composition of AlGaN with an Al composition x1 of 0.95 to 1 at an interface on the single crystal AlN substrate side.'}3. The optical semiconductor element according to claim 1 , whereinthe second composition gradient layer has a same Al composition on a side of the first composition gradient layer as that of the first composition gradient layer on a side of the second composition gradient layer.4. The optical semiconductor element according to claim 1 , whereinone surface of the first composition gradient layer is in contact with the second composition gradient layer, and the other surface of the first composition gradient layer is in contact with the single crystal AlN substrate.5. The optical semiconductor element according to claim 1 , further comprising a buffer layer provided between the single crystal AlN substrate and the first composition gradient layer whereinone surface of the first composition gradient layer is in contact with the second composition gradient layer, and the other surface of the first composition gradient layer is in contact with the buffer layer,the buffer layer is in contact with the single crystal AlN substrate.6. The optical semiconductor element according to claim 1 , whereinthe ...

Group iii nitride stacked body, and semiconductor device having the stacked body

Provided is a group III nitride stacked body having an n-type AlXGa1-XN (0.5≤X<1) layer formed on an AlN single crystal substrate while being lattice-matched to the AlN single crystal substrate wherein the n-type AlXGa1-XN (0.5≤X<1) layer has at least a stacked structure in which a first n-type AlX1Ga1-X1N (0.5≤X1<1) layer, a second n-type AlX2Ga1-X2N (0.5≤X2<1) layer, and a third n-type AlX3Ga1-X3N (0.5≤X3<1) layer are stacked in this order from the AlN single crystal substrate side, and X1, X2, and X3 indicating the Al compositions of the respective layers satisfy 0<|X1−X2|≤0.1, and satisfy 0<|X2−X3|≤0.1.

Aluminum Nitride Substrate and Group-III Nitride Laminate

A substrate includes aluminum nitride, wherein the aluminum nitride substrate has on at least a surface thereof an aluminum nitride single-crystal layer having as a principal plane a plane that is inclined 0.05° to 0.40° in the m-axis direction from the (0001) plane of a wurzite structure. 1. An aluminum nitride substrate , wherein said aluminum nitride substrate comprises at least on a surface thereof an aluminum nitride single crystal layer having a principal plane inclined to “m” axis direction within a range of 0.05° or more and 0.40° or less from (0001) plane of a wurzite structure.2. The aluminum nitride substrate as set forth in claim 1 , wherein said principal plane is inclined to “a” axis direction within a range of 0.00° or more and 0.40° or less from (0001) plane of the wurzite structure.3. A group III nitride layered product comprising AlGaInBN layer which satisfies a composition shown by AlGaInBN claim 1 , wherein x claim 1 , y claim 1 , and z are independently a rational number of 0 or more and less than 0.5 respectively claim 1 , and a sum of x claim 1 , y claim 1 , and z is less than 0.5 claim 1 , on the principal plane of the aluminum nitride single crystal layer of the aluminum nitride substrate as set forth in .4. The group III nitride layered product as set forth in wherein the AlGaInBN layer has a composition claim 3 , in said AlGaInBN claim 3 , x being a rational number lager than 0 and less than 0.5 claim 3 , and y and z being a rational number of 0 or more and less than 0.5 claim 3 , andin photoluminescence measurement at 300 K of said AlGaInBN layer, a peak corresponding to band gap of said AlGaInBN layer of 4.56 eV or more and less than 5.96 eV is observed, and full width at half maximum is 225 meV or less.5. The group III nitride layered product as set forth in claim 3 , wherein AlN layer claim 3 , x claim 3 , y and z being 0 in said AlGaInBN claim 3 , is directly formed on the principal plane of said aluminum nitride single crystal layer ...

Composite wavelength conversion powder, resin composition containing composite wavelength conversion powder, and light emitting device

A composite wavelength conversion powder and a resin composition containing a composite wavelength conversion powder which have high utilization efficiency of light and high utilization efficiency of a constituent material, and are able to make highly efficient light emission and high reliability compatible are provided. The composite wavelength conversion powder is formed by dispersing phosphor particles having a refractive index of 1.6 or more in matrix particles containing fine magnesium fluoride particles or fine calcium fluoride particles. In addition, a light emitting device which is able to improve utilization efficiency of light due to the phosphor particles excited by primary irradiation light emitted by a light emitting element, is able to improve the optical output of light emission by increasing an the amount of secondary irradiation light generated from the phosphor particles, and is able to suppress limit the occurrence of color unevenness or a color variation device in light emitted to the outside of the device is provided. A light emitting device ( 1 ) includes a substrate ( 2 ), a light emitting element ( 3 ) mounted on a front surface of the substrate ( 2 ), and a light transmitting member ( 4 ) formed to cover the light emitting element ( 3 ), and the light transmitting member ( 4 ) contains phosphor particles having an average particle diameter of 500 nm or less, and composite wavelength conversion particles ( 12 ) formed of inorganic particles having an average particle diameter of 500 nm or less which are transparent with respect to visible light.

GROUP III NITRIDE LAMINATE AND VERTICAL SEMICONDUCTOR DEVICE HAVING THE LAMINATE

A group III nitride laminate having monocrystalline n-type AlGaN (0.7≤X≤1.0) and an electrode is provided. The group III nitride laminate is characterized in that an n-type contact layer made of (AlGa)O(0.0≤Y<0.3) is provided between the monocrystalline n-type AlGaN (0.7≤X≤1.0) and the electrode. Furthermore, a vertical semiconductor device including the above-described group III nitride laminate is provided. 1. A group III nitride laminate comprising monocrystalline n-type AlGaN (0.7≤X≤1.0) and an electrode , wherein an n-type contact layer made of (AlGa)O(0.0≤Y<0.3) is provided between the monocrystalline n-type AlGaN (0.7≤X≤1.0) and the electrode.2. The group III nitride laminate according to claim 1 , wherein the n-type contact layer contains at least one n-type dopant selected from Si and Sn claim 1 , and a concentration of the n-type dopant is 10to 10cm.3. The group III nitride laminate according to claim 1 , wherein the n-type contact layer is a single crystal layer or a polycrystal layer.4. The group III nitride laminate according to claim 1 , wherein the monocrystalline n-type AlGaN (0.7≤X≤1.0) is an n-type AlN.5. The group III nitride laminate according to claim 1 , wherein a surface of the monocrystalline n-type AlGaN (0.7≤X≤1.0) on which the electrode is formed is a nitrogen polar face.6. A vertical semiconductor device comprising the group III nitride laminate according to .7. A method for producing the group III nitride laminate and the vertical semiconductor device according to claim 1 , characterized by forming an n-type contact layer made of (AlGa)O(0.0≤Y<0.3) on monocrystalline n-type AlGaN (0.7≤X≤1.0) claim 1 , and forming an electrode on the n-type contact layer.8. The method for producing the group III nitride laminate and the vertical semiconductor device according to claim 7 , wherein the n-type electrode is formed on a nitrogen polar face of the monocrystalline n-type AlGaN (0.7≤X≤1.0).9. The method for producing the group III nitride ...

Highly transparent aluminum nitride single crystalline layers and devices made therefrom

The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline AlN layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30 % of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200°C.

Method for manufacturing optical element

Heat accumulation hot air heater

【課題】簡単な構成で暖房運転時間を延長可能な蓄熱温風暖房機を提供する。 【解決手段】蓄熱温風暖房機１は、燃料室２１を有する燃焼炉２と、燃焼炉２へ空気を導入するための送風機７と、を備え、燃焼室２は、燃料Ｆの燃焼が行われる燃焼部２１ａと、多数の蓄熱体１０を収容する蓄熱部２１ｂと、を有し、蓄熱部２１ｂは下流側において燃焼部２１ａと連通し、燃焼部２１ａと蓄熱部２１ｂとの間には蓄熱板１１が配置されている。燃焼炉２へ導入された空気の一部は蓄熱部２１ｂを上流側から下流側へ多数の蓄熱体１０の隙間を通って流れる。 【選択図】図１

Automatic device for changing spinning pack of melt spinning machine

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Airtight device of elevator doors

Method for manufacturing optical element and optical element multilayer body

Sealing device for elevator

A SEALING DEVICE FOR AN ELEVATOR DOOR INCLUDES A DOORWAY MEMBER (10), DOORS (6A, 6B), A MOVABLE MEMBER (32), A PUSH-DOWN MECHANISM (36, 37) AND A SEALING MECHANISM (30). THE DOORWAY MEMBER (10) IS PROVIDED FOR A GATE. THE DOORS (6A, 6B) OPEN OR CLOSE ALONG THE DOORWAY MEMBER (10). THE MOVABLE MEMBER (32) IS SET HORIZONTALLY AND PROVIDED TO BE MOVABLE IN A VERTICAL DIRECTION IN THE DOORWAY MEMBER (10), AND IT IS URGED UPWARDS BY AN URGING UNIT (35). THE PUSH-DOWN MECHANISM (36, 37) PUSHES DOWN THE MOVABLE MEMBER (32) AGAINTS THE FORCE OF THE URGING UNIT (35) JUST BEFOR THE DOORS (6A, 6B) ARE CLOSED. THE SEALING MECHANISM (30) IS KEPT NON-CONTACT WITH THE DOORS (6A, 6B) WHILE THEY ARE MOVING, AND SEALS THE GAP BETWEEN THE DOORS (6A, 6B) AND THE DOORWAY MEMBER (10) AS IT IS BROUGHT INTO CONTACT WITH UPPER SECTION OF THE DOORS (6A, 6B) WHEN THE MOVABLE MEMBER (32) IS PUSHED DOWN BY THE PUSH-DOWN MECHANISM (36, 37).

Aluminum nitride substrate and group-iii nitride laminate

Acrylic copolymer, process for the preparation of the same and use application of the same

ABSTRACT OF THE DISCLOSURE The acrylic copolymer of the present invention is an acrylic copolymer comprising recurring units derived from a (meth)acrylic ester compound and recurring units derived from a vinyl compound having -SO3R (wherein R represents a hydrogen atom or a lower alkyl group) or having an acceptable salt thereof, wherein at least a part of ester groups of the (meth)acrylic ester compound is substituted by a group having recurring units derived from a (meth)acrylic ester. The present invention further provides a process for the preparation of the acrylic copolymer and use application of the acrylic copolymer utilizing its adhesion properties.

Vertical-type ultraviolet light-emitting diode

窒化アルミニウム単結晶積層体、該積層体の製造方法、及び該積層体を利用した半導体素子の製造方法

【課題】転位密度が低く、反りが小さく、耐薬品性が高く、半導体素子を製造するに際して、裏面を被覆保護することなく高品質の半導体素子を製造できる窒化アルミニウム単結晶積層体（基板）を提供する。【解決手段】窒化アルミニウム単結晶基板の窒素極性面上に、窒化アルミニウム単結晶層が直接積層した積層構造を有する窒化アルミニウム単結晶積層体であって、該積層体の表面および裏面の全面が共にアルミニウム極性面であり、表面および裏面の転位密度が共に１０６ｃｍ−２以下であることを特徴とする窒化アルミニウム単結晶積層体である。【選択図】図１

２バンドチューナ

(57)【要約】 【課題】 周波数帯域の広いバンドにおける利得偏差を 少なくする。 【解決手段】 高周波増幅器７は入力端子と出力端子と 基準端子とを有する増幅素子８と、基準端子とグランド との間に接続されて基準端子とグランドとの間にバイア ス電圧を発生するバイアス電圧発生手段９とを有し、第 一の放送信号または第二の放送信号は入力端子に入力さ れ、バイアス電圧発生手段９には基準端子から増幅素子 ８の動作電流を流してバイアス電圧を発生させ、バイア ス電圧によって増幅素子８に負帰還をかけるようにし、 第一の放送信号を受信するときにはバイアス電圧発生手 段８が実質的に抵抗素子９ｂ，９ｃで構成されるように し、第二の放送信号を受信するときにはバイアス電圧発 生手段８が実質的にインダクタンス素子９ａで構成され るようにした。

部材取付構造及びこれを備える粉砕装置

【課題】部材の取外を容易にできる部材取付構造を備える粉砕装置を提供する。【解決手段】粉砕装置１は、雌ねじ部３１ｃを有する回転体３と、回転体３に取り付けられるスクリュ４と、雌ねじ部３１ｃに螺合可能な取付ボルトと、を備え、スクリュ４には挿通孔４１が設けられている。スクリュ４は、挿通孔４１に挿通された取付ボルトを雌ねじ部３１ｃに螺着させることにより回転体３に取り付けられる。挿通孔４１には、取付ボルトよりも大きなネジ径を有する抜きボルト８と螺合可能な雌ねじ部４１ｃが設けられている。【選択図】図３

エレベータのヘッダーケース

【課題】エレベータの構成の複雑化を抑制することができるヘッダーベースを得る。 【解決手段】実施形態のエレベータのヘッダーケースは、エレベータの乗り場ドアの上方に配置され、乗り場ドアと一体に移動するドアハンガーと外周部に弾性体を有しドアハンガーに連結されたハンガーローラとを収容する。ヘッダーケースは、ヘッダーベースを備える。ヘッダーベースには、ハンガーレールが設けられる。ハンガーレールは、ハンガーローラの下側に位置し弾性体と接触しハンガーローラが移動する。ヘッダーベースには、孔が設けられている。孔は、ハンガーレール上に位置した弾性体よりも少なくとも一部が下方に位置し、融解した弾性体を排出する。 【選択図】図４

落下物防止装置

(57)【要約】 【課題】 落下物の危険がなく、乗りかご閉じ込め事故 をなくすることにある。 【解決手段】 構造物１又は乗りかご２下部に上面開口 部１１を有する受け箱１０を回動可能に支持する一方、 受け箱を開閉するための回動駆動力を発生する駆動装置 ２２を設置する。この駆動装置に接続される回転軸３１ にはトグルリンク機構を構成するリンク部材３３’、３ ３”をもつ駆動力伝達機構３０を設け、回転軸の駆動力 をリンク部材を介して受け箱に伝達し、受け箱を開閉す る。受け箱が開く方向及び閉じる方向に復元力を付与す る双方向安定装置４０を設け、受け箱の開閉状態を安定 に保持する。また、受け箱上部側に当接部材６１、当該 受け箱に対面する乗りかご下部面部又は構造物面部に傾 斜をもつ被当接部位６２を設け、乗りかごの昇降時に被 当接部位が当接部材を押し退けるようにし、制御装置の 一部の故障に対しても乗りかごを最寄階を誘導する。

階段支持材及びこれを用いた仮設階段

【課題】階段支持材の踏み板側の面につかみ金具を締結するボルトのボルト頭を陥没させて回り止めをする凹溝を設けることにより、別途回り止めを施すことなくつかみ金具を階段支持材に締結でき、仮設階段を積み重ねた時に上下段に位置する踏み板とボルト頭とが接触せず、踏み板の大きさや形状の制限をなくすことができる。 【解決手段】踏み板２を取り付ける中央壁３の幅方向両端から踏み板２とは反対側へフランジ４を延設して断面略コ字状に形成し、中央壁３の長手方向端部に、断面略コ字状内方に配置されるつかみ金具５をボルト６で締結するボルト孔７を形成し、中央壁３の踏み板２側の面にボルト６のボルト頭６ａを陥没させて回り止めをするボルト頭２面幅の凹溝８を形成している。 【選択図】図１

紫外半導体発光素子

【課題】駆動して深紫外光を出射しているか否かを使用者が容易に確認可能な紫外半導体発光素子を提供することを目的としている。【解決手段】本発明による紫外半導体発光素子は、単結晶ＡｌＮ基板と、前記単結晶ＡｌＮ基板上に形成されたｎ型ＡｌＧａＮ層と、前記ｎ型ＡｌＧａＮ層上に形成され、発光ピーク波長が２５０ｎｍ以上２８０ｎｍ以下である活性層と、前記活性層上に形成されたｐ型ＡｌＧａＮ層と、を有し、前記単結晶ＡｌＮ基板中のＣ濃度は３×１０１７ａｔｏｍｓ／ｃｍ３以上である。【選択図】図１

多層印刷配線板

(57)【要約】 【目的】 内層回路パターンと外層回路パターンとを電 気的に接続する。 【構成】 絶縁基板２と、前記絶縁基板２の上面，下面 の少なくとも一方の面上に形成した第１の回路パターン ３と、前記第１の回路パターン３を形成した面側の前記 絶縁基板上に、塗布・形成された、内側絶縁層４０Ｂと 外側絶縁層４０Ａからなり、外側絶縁層は酸化剤に対し て難溶性を示す樹脂の中に前記酸化剤に対して可溶性を 示す炭酸カルシウム４ｂを分散させ、且つ前記第１の回 路パターン３を露出させるべく制御されたレーザ光によ って接続用有底孔５を表面側から穿設された複合絶縁層 ４０と、前記酸化剤により前記複合絶縁層の表面及びこ の複合絶縁層に穿設した前記接続用有底孔５の内壁を粗 面化した上に形成した第２の回路パターン７とを備え、 前記接続用有底孔を介して前記第１，２の回路パターン ３，７相互を電気的に接続したことを特徴とする多層印 刷配線板。

足場板用巾木

【課題】足場板への取付性を容易化し、しかも、着脱可能として足場板の運搬・取扱等の労力負担を軽減し得る足場板用巾木を提供すること。 【解決手段】足場板１の巾方向端部に足場板１の上面から上方へ向けて直立して取り付けられる巾木２であって、該巾木２は、板状の主体部２ａと、該主体部２ａの下部に一体成形された取付脚部２ｂとを有する巾木本体２ｃと、該巾木本体２ｃを、足場板１に着脱可能に取り付ける取付手段３を備えており、前記取付脚部２ｂは、前記主体部２ａを足場板１の巾方向端部側面から直立した状態で足場板１に取り付けるために、足場板１の巾方向端部の上面と側面とに当接係合する当接部２ｂ１、２ｂ２を備えている。 【選択図】図１

複合波長變換粉體、含有複合波長變換粉體的樹脂組成物及發光裝置

本發明提供一種光的利用效率及材料自體的利用效率高，且可兼具高效率發光及高可靠度之複合波長變換粉體以及含有複合波長變換粉體的樹脂組成物。此複合波長變換粉體，係在含有氟化鎂微粒子或氟化鈣微粒子之基質粒子中，分散有折射率為1.6以上的螢光體粒子所構成。而且，提供可提高藉由發光元件放射的1次放射光激發之螢光體粒子之光利用效率，可提高因螢光體粒子產生的2次放射光的量增加而發出的光輸出，進一步可抑制放射至裝置外部的光之色斑，顏色變化的產生之發光裝置。此發光裝置(1)具備基板(2)、裝載於基板(2)的表面之發光元件(3)以及被覆發光元件(3)所成的透光性構件(4)，其中，透光性構件(4)係含有由平均粒徑500 nm以下的螢光體粒子、以及對紫外線及可見光線為透明之平均粒徑500 nm以下的無機粒子所構成的複合波長變換粒子(12)。

エレベータドアの密閉装置

【課題】設置スペースを小さくでき、調整が容易で、配線や制御装置が不要で、戸閉時に過大な反力が発生せず、大きな摺動音が生じることもなく、シール部材の摩耗や過大な摩擦力の心配がない耐久性に優れるエレベータドアの密閉装置を提供する。 【解決手段】エレベータの乗降口に設けられた幕板１０に、下部にループ状に湾曲するループ部７２ａを有するゴムシート７２を水平に取り付け、このゴムシート７２の上部に押さえ板７１を取り付け、この押さえ板７１をばねで上方に弾性的に付勢し、乗り場ドア６ｆの戸閉直前に、カム板とカムローラとの係合で前記押さえ板７１を前記ばねに抗して下方に押し付け、この押し付けにより前記ゴムシート７２を弾性的に撓ませながら乗り場ドア６ｆの上部と幕板１５の折り返し部１５ｃとの間に跨って密着させ、この密着により乗り場ドア６ｆと幕板１５との間の隙間を密閉する。 【選択図】 図１６

Ultraviolet semiconductor light-emitting element

An object of the present invention is to provide an ultraviolet semiconductor light-emitting element that allows a user to easily confirm whether or not it is driven to emit the deep ultraviolet light. An ultraviolet semiconductor light-emitting element according to the present invention includes a single crystal AlN substrate, an n-type AlGaN layer, an active layer, and a p-type AlGaN layer. The n-type AlGaN layer is formed on the single crystal AlN substrate. The active layer is formed on the n-type AlGaN layer. The active layer has a light emission peak wavelength of 250 nm or more and 280 nm or less. The p-type AlGaN layer is formed on the active layer. The C concentration in the single crystal AlN substrate is 3×10 17 atoms/cm 3 or more.

ｐ型ＧａＮ層の製造方法、及び該製造方法を利用した半導体デバイスの製造方法

【課題】表面が平滑であって、抵抗値が低いｐ型ＧａＮ層であり、さらに、該ｐ型ＧａＮ層上に形成した電極の接触抵抗が低くできるｐ型ＧａＮ層の製造方法を提供する。【解決手段】 有機金属気相成長法により、窒素ガスを含むキャリアガスを使用して、ＡｌＸＧａ１−ＸＮ（０＜Ｘ≦１）単結晶層上にｐ型ＧａＮ層を製造する方法であって、前記ｐ型ＧａＮ層を、キャリアガス中の窒素ガスの体積流量比が０．１以上０．５未満であり、成長速度が０．０３〜０．３５μｍ／ｈで成長させることを特徴とするｐ型ＧａＮ層の製造の製造方法である。【選択図】図１

Light emitting device adapted to emit ultraviolet light

マニホールド圧力補償システム

(57)【要約】 【課題】マニホールド圧力発信器の装備削減を促進する マニホールド圧力補償システムを提供すること。 【解決手段】ポンプ吐出圧力を発信する発信手段（３） と、この発信手段（３）からのデータを基に求めたポン プの流量と前記ポンプからマニホールドまでの配管抵抗 とを基に圧力損失を計算し、前記ポンプの吐出圧力から 前記圧力損失を差し引いてマニホールド圧力を算出する 演算手段（１）と、この演算手段（１）で算出されたマ ニホールド圧力を基に、前記ポンプのコントローラ （７）を制御する信号を出力する出力手段（１）と、を 具備。

積層体およびその製造方法

【課題】高温化で長時間保持するというアニ−ル処理を行なった場合でも使用時に抵抗値や抵抗温度係数が経時的に変化しない薄膜抵抗体を提供する。 【解決手段】例えば、基板上に減圧条件下でスパッタ法により窒化アルミニウム薄膜層を形成した後、得られた窒化アルミニウム薄膜層を有する基板を減圧条件下に保ったまま当該基板の窒化アルミニウム薄膜層上に白金、ニッケル、金、アルミニウム及び銅かなる群より選ばれる少なくとも１種の金属からなる金属層を形成することにより得られる、窒化アルミニウムからなる表面を有する基板の当該表面上に白金等の金属層が２．５ｋｇｆ／ｍｍ ２ 以上の密着強度で直接接合した積層体を薄膜抵抗体として使用する。 【選択図】 図１

仮設階段用踏み板及びこれを用いた仮設階段

【課題】踏み板の階段支持材に対向する外側面に突条を設けることにより、踏み板と階段支持材との間で間隙を形成でき、仮設階段を積み重ねる際に階段支持材の間へ踏み板を嵌め込みやすくできる。 【解決手段】略矩形状の板材１０と、この板材１０の両端に取り付けられる端部材１１とを有し、複数本のボルト１２で階段支持材９に締結されており、端部材１１の階段支持材９に対向する外側面に、階段支持材９との間で間隙ｄを形成する突条１３をボルト孔１４の上下それぞれに少なくとも１条設けている。 【選択図】図１

接近物体の監視装置および方法

(57)【要約】 【課題】 暗闇下における接近物体の監視。 【解決手段】 レーザレーダ手段１０で検出される物体 ６０の位置を時系列処理して該物体６０の動きをベクト ル解析し、そのベクトル解析結果に基づいて物体６０が 接近していることを判定する。

紫外發光二極體及紫外線光源

本發明係一種紫外發光二極體及紫外線光源，係具有：以具有加以放射光之發光主面的基板，n型層，活性層，及p型層之順序加以層積之層積構造，更且，於p型層上具有p型電極，且於除去p型層，及活性層之一部分的範圍而使其露出之n型層上，具有n型電極之發光二極體，其特徵為，發光峰值波長位於220~350nm之範圍，在25℃中，在驅動電流值150mA之發光輸出密度為10W/cm2以上，驅動電壓值為10V以下之紫外發光二極體。

エレベータのシーブ加熱装置およびエレベータのシーブ加熱方法

【課題】グリスの固着を防止することができるエレベータのシーブ加熱装置を提供する。【解決手段】実施の形態によるエレベータのシーブ加熱装置３０は、シーブ２０が配置される内側空間４０を画定するカバー３１と、カバーの内面に取り付けられ、シーブを加熱するヒータ５０と、を備えている。ヒータは、シーブのロープ溝に対向している。【選択図】図３