Способ получения сульфобромидов типа ABC

Изобретение относится к технологии получения нитевидных монокристаллов сульфобромидов трехвалентных металлов SbSBr, BiSBr, CrSBr, которые могут быть использованы в качестве легирующих добавок при получении композитных пьезоэлектрических материалов с заданными свойствами в гидроакустических преобразователях и преобразователях электромагнитной энергии в механическую. Получают SbSBr из сульфида натрия NaS, хлорида сурьмы SbCl, бромида калия KBr; BiSBr получают из сульфида натрия NaS, хлорида висмута BiCl, бромида калия KBr; CrSBr получают из сульфида натрия NaS, хлорида хрома CrCl, бромида калия KBr, синтез каждого целевого продукта проводят обменным взаимодействием в насыщенном солянокислом растворе хлорида соответствующего металла путем растворения в нем кристаллического бромида калия и покапельного добавления концентрированного раствора сульфида натрия с последующей обработкой полученной реакционной смеси ультразвуковыми колебаниями до образования осадка. Технический результат - повышение ...

СПОСОБ ПОЛУЧЕНИЯ МОНОКРИСТАЛЛОВ ОРГАНО-НЕОРГАНИЧЕСКОГО КОМПЛЕКСНОГО ГАЛОГЕНИДА

Изобретение относится к технологии получения монокристаллов из растворов за счет химического превращения растворителя. Способ получения монокристаллов органо-неорганического комплексного галогенида (ОНКГ) состава ABX, где z = 1-2, k = 2-4, 0 Подробнее

УСТРОЙСТВО ДЛЯ ОБРАБОТКИ МАТЕРИАЛОВ ПРИ ВЫСОКИХ ТЕМПЕРАТУРАХ И ДАВЛЕНИЯХ

... 1. Устройство, содержащее:высокопрочную оболочку;множество высокопрочных радиальных сегментов, прилегающих к высокопрочной оболочке и расположенных радиально внутри нее;вкладыш, прилегающий к радиальным сегментам и расположенный радиально внутри них;камеру, определенную внутри вкладыша;нагревательное устройство, расположенное внутри камеры; икапсулу, расположенную внутри камеры, причем капсула предназначена, чтобы удерживать реагенты и материалы для выращивания кристаллов в условиях высоких температур и давлений; причем существует зазор между вкладышем и внешней поверхностью нагревательного устройства.2. Устройство по п. 1, в котором нагревательное устройство определяет внешнюю поверхность, внутреннюю поверхность и внутреннюю полость.3. Устройство по п. 1 или 2, в котором капсула расположена во внутренней полости нагревательного устройства.4. Устройство по п. 3, в котором капсула имеет такую конфигурацию, что существует зазор между внешней поверхностью капсулы и внутренней поверхностью ...

VERFAHREN ZUM ZUECHTEN VON KRISTALLEN HOHER PERFEKTION AUS KONVEKTIONSFREIER SCHMELZFLUESSIGER SUBSTANZMASSE

High thermal conductivity insulated metal substrates produced by plasma electrolytic oxidation

Perovskite nanofilms

Method

Ammonium borofluoride compound, ammonium borofluoride non-linear optical crystal and preparation method and use

Rram materials and devices

METHODS FOR SYNTHESIS OF GRAPHENE DERIVATIVES AND FUNCTIONAL MATERIALS FROM ASPHALTENES, GRAPHENE DERIVATIVES, 2D MATERIALS AND APPLICATIONS OF USE

METHODS FOR SYNTHESIS OF GRAPHENE DERIVATIVES AND FUNCTIONAL MATERIALS FROM ASPHALTENES, GRAPHENE DERIVATIVES, 2D MATERIALS AND APPLICATIONS OF USE

METHODS FOR SYNTHESIS OF GRAPHENE DERIVATIVES AND FUNCTIONAL MATERIALS FROM ASPHALTENES, GRAPHENE DERIVATIVES, 2D MATERIALS AND APPLICATIONS OF USE

Solid forms of TTK inhibitor

Abstract The present invention relates to a hydrobromide salt of the compound of formula (1), to process for the preparation of the hydrobromide salt, to pharmaceutical compositions containing the hydrobromide salt, to the use of such a hydrobromide salt in the manufacture of a medicament for use in the treatment of cancer and to methods of treating such diseases in the human or animal body by administering a therapeutically effective amount of such a hydrobromide salt. H $ NH 0 H (I) ...

METHOD OF SEMICONDUCTOR NANOPARTICLE SYNTHESIS

A Method is described for the manufacture of semiconductor nanoparticles. Improved yields are obtained by use of a reducing agent or oxygen reaction promoter.

PRODUCTION OF CRYSTALLINE CELLULOSE

A method of producing crystalline cellulose from a cellulosic material includes the step of reacting the cellulosic material in an aqueous slurry comprising a transition metal catalyst and a hypohalite solution.

METHODS FOR SYNTHESIS OF DERIVATIVES OF GRAPHENE AND FUNCTIONAL MATERIALS FROM ASPHALTENES, DERIVATIVES OF GRAPHENE, TWO-DIMENSIONAL MATERIALS AND FIELD OF APPLICATION

Method for preparing calcium sulfate whiskers through decomposing of high-Mg phosphate tailings with hydrochloric acid

Method for preparing nickel nanoparticles

Provided is a method for preparing nickel nanoparticles capable of easily controlling particle sizes and shapes of the nickel nanoparticles and obtaining a high yield of the nickel nanoparticles usinga process that is simpler than methods used to mass-produce the nickel nanoparticles. The method for preparing nickel nanoparticles may be useful to prepare nickel nanoparticles by mixing a nickel precursor and organic amine to prepare a mixture and heating the mixture.

Methods for preparing low specific surface area (BET) manganous manganic oxide and controlling granularity and manganous manganic oxide

Preparation method of gypsum whisker

ADDIFIF FOR THE PROTEIN CRYSTALLIZATION, USE AND PROCEEDED

DOPED SEMICONDUCTOR NANOCRYSTALS, METHOD FOR PREPARING SAME AND USES THEREOF

전이 금속 복합 수산화물 입자와 그의 제조 방법, 비수전해질 이차 전지용 정극 활물질과 그의 제조 방법, 및 비수전해질 이차 전지

... 본 발명의 과제는 비수전해질 이차 전지의 정극 재료로서 사용한 경우에, 이차 전지의 용량 특성, 출력 특성 및 사이클 특성을 동시에 향상시킬 수 있는 정극 활물질을 제공하는 것이다. 본 발명의 해결수단은, 적어도 전이 금속을 함유하는 금속 화합물과 암모늄 이온 공급체를 포함하는 핵 생성용 수용액의 pH값을 12.0 내지 14.0이 되도록 제어하여 핵 생성을 행한 후(핵 생성 공정), 이 핵을 함유하는 입자 성장용 수용액의 pH값을 당해 핵 생성 공정의 pH값보다도 낮게, 또한 10.5 내지 12.0이 되도록 제어하여 성장시킨다(입자 성장 공정). 이때, 핵 생성 공정 및 입자 성장 공정의 초기를 비산화성 분위기로 함과 동시에, 입자 성장 공정에 있어서 이 비산화성 분위기를 산화성 분위기로 전환한 후, 다시 비산화성 분위기로 전환하는 분위기 제어를 적어도 1회 행한다. 이러한 정석 반응에 의해 얻어진 복합 수산화물 입자를 전구체로 하여, 정극 활물질을 얻는다.

Method for manufacturing metallic fine particles, metallic fine particles manufactured thereby, and composition, optical absorber and applied product including the same

The method for manufacturing metallic fine particles includes by using a solution containing amine having reducing ability and ammonium salt having substantially no reducing ability, reducing metal ions in the presence of the ammonium salt, thereby manufacturing rod-shaped metallic fine particles. The metallic fine particles are manufactured by the method for manufacturing metallic fine particles, and a length of major axis is 40 mn or less, a length of minor axis is 15 nm or less, and an aspect ratio is more than 1.

METHOD FOR PRODUCING METAL FINE PARTICLE, METAL FINE PARTICLE PRODUCED THEREBY, COMPOSITION CONTAINING SAME, LIGHT ABSORBING MATERIAL, AND APPLICATION THEREOF

L’invention porte sur un procédé de fabrication de fines particules de métal impliquant l’utilisation d’une solution aqueuse contenant des amines ayant un pouvoir réducteur et un sel d’ammonium sensiblement sans pouvoir réducteur pour réduire les ions métalliques avec les amines en présence du sel d’ammonium, produisant ainsi de fines particules de métal en forme de barre. Il est également divulgué de fines particules de métal caractérisées en ce qu’elles sont produites au moyen d’un tel procédé de fabrication de fines particules de métal et possédant un axe principal ne dépassant pas 400 nm, un axe mineur ne dépassant pas 15 nm et un rapport d’allongement supérieur à 1.

METHOD OF PREPARING AN ELECTRICALLY CONDUCTIVE MATERIAL, AND AN ELECTRICALLY CONDUCTIVE MATERIAL

There is provided a method of preparing an electrically conductive material. The method comprises providing a substrate in association with a plurality of growth sites; and contacting at least part of the growth sites with a growth solution to cause a continuous layer of electrically conductive crystalline metal oxide to grow from the growth sites, wherein the growth solution comprises metal ions for growing the crystalline metal oxide. There is also provided an electrically conductive material obtainable by said method.

Production of Crystalline Cellulose

A method of producing crystalline cellulose from a cellulosic material includes the step of reacting the cellulosic material in an aqueous slurry comprising a transition metal catalyst and a hypohalite solution. 1. A method of producing crystalline cellulose from a cellulosic material , comprising the steps of:(a) reacting the cellulosic material in an aqueous slurry comprising a transition metal catalyst and a hypohalite solution having a concentration of 0.05M or greater, and an initial pH greater than 5.5 and a final pH less than 9.5, and(b) recovering a crystalline cellulose fraction.2. The method of wherein the hypohalite comprises hypochlorite claim 1 , hypoiodite claim 1 , or hypobromite.3. The method of wherein the initial pH of the slurry is between 9.0 to 12.0.4. The method of wherein the final pH of the slurry is below 8.0.5. The method of wherein the final pH of the slurry is below about 7.0.6. The method of claim 1 , wherein the slurry has an initial oxidation-reduction potential (ORP) of greater than about 500 mV.7. The method of wherein the slurry has a final ORP of less than about 0.0 mV.8. The method of wherein the slurry further comprises a buffer.9. The method of wherein the buffer comprises a phosphate and a polyvalent organic acid.10. The method of wherein the ratio of hypohalite to cellulosic material in the slurry is between about 1 mol/kg to about 10 mol/kg (dry weight basis).11. The reaction of wherein the slurry is heated to between about 50° C. and about 85° C.12. The method of wherein the reaction of step (a) is repeated by adding additional hypohalite doses to produce a mixture of microcrystalline cellulose and cellulose nanocrystals.13. The method of wherein the additional hypohalite is added after a significant drop of oxidation-reduction potential.14. The method of wherein the total amount of hypohalite added is between about 1 mol/kg of cellulosic material to about 20 mol/kg (dry weight).15. The method of comprising the further steps ...

Single-crystalline metal nanorings and methods for synthesis thereof

In various embodiments, methods for synthesizing single-crystalline zero-valent metal nanorings, such as single-crystalline copper nanorings, are described herein. The methods include providing a solution containing a metal cation, a complexing agent bound to the metal cation, thereby forming a metal complex that is at least partially soluble in the solution, and a reducing agent operable for reducing the metal complex to a zero-valent metal and then heating the solution for a sufficient time and at a sufficient temperature until zero-valent metal nanorings form. The solution may be an aqueous solution in an embodiment. Single-crystalline metal nanorings produced by the methods described herein may have a diameter less than about 100 mum and a wall thickness between about 10 nm and about 500 nm.

Synthesis of silicon nanorods

A method for making silicon nanorods is provided. In accordance with the method, Au nanocrystals are reacted with a silane in a liquid medium to form nanorods, wherein each of said nanorods has an average diameter within the range of about 1.2 nm to about 10 nm and has a length within the range of about 1 nm to about 100 nm.

Colloidal nanocrystal ensembles with narrow linewidth band gap photoluminescence and methods of synthesizing colloidal semiconductor nanocrystals

A method of synthesizing colloidal semiconductor nanocrystals involves contacting a source of at least one semi-conductor cation element (Group 11-14, more preferably Group 12-14, more preferably 12 or 14, more preferably Cd, Zn, Hg or Pb, most preferably Cd) with a source of at least one Group 15, or 16 element in the presence of a ligand forming compound containing a carboxylic acid moiety in a reaction medium comprising a solvent that is substantially noncoordinating with respect to the at least one cation, the ligand forming compound and the source of at least one cation element having a molar ratio of 1:1 or less. The cation element source is preferably bonded to two low carbon acids. Some of the low carbon acids are substituted with the ligand forming compound to produce a cation precursor that is more soluble in the noncoordinating solvent. The method produces novel ensembles of colloidal semiconductor nanocrystals that have narrow linewidth absorption and bandgap photoluminescence ...

REVERSIBLE CONTROL OF SOLUTION SOLUBILITY USING FUNCTIONALIZED NANOPARTICLES

Aspects of the disclosure relate to methods and compositions of altering a solution through the use of readily retrievable agents (e.g., a nanoparticle) having one or more functional groups configured to undergo a solvation interaction with a component of the solution. Compositions, systems, and methods for crystallizing organic and inorganic compounds from solutions using nanoparticles surface coated with functional groups that create a supersaturated state in the solution and reversal thereof. Compositions, systems, and methods for purifying water or active pharmaceutical ingredients. Compositions, systems, and methods for increasing the solubility of a solution and reversal of the same. Compositions, systems, and methods for decreasing the solubility of a crystallized compound and reversal of the same.

СПОСОБ ИЗГОТОВЛЕНИЯ ИЗДЕЛИЯ ИЗ СПЕЧЕННОГО АМОРФНОГО КРЕМНЕЗЕМА, А ТАКЖЕ ФОРМА И ШЛИКЕР, ИСПОЛЬЗУЕМЫЕ В ЭТОМ СПОСОБЕ

Изобретение относится к способу изготовления изделия из спеченного аморфного кремнезема, а также к форме и шликеру, используемым в этом способе. Техническим результатом изобретения является упрощение способа получения изделий из спеченного кремнезема, снижение пористости, усадки и повышение плотности изделий. Форма (10) для изготовления подлежащей спеканию заготовки на основе кремнезема, предназначенная для заполнения шликером на основе аморфного кремнезема и жидкости, имеет внутреннюю часть (14) и наружную часть (12), ограничивающие стенку указанной заготовки. При этом, по меньшей мере, в одной зоне, ограничивающей полезный участок указанной стенки, внутренняя часть (14) является непроницаемой для указанной жидкости, деформируемой, и имеет собственную жесткость, достаточную для того, чтобы ограничивать стенку заготовки при загрузке шликера в форму. Внутренняя часть (14) содержит рубашку (30), внешняя поверхность которой непроницаема, причем рубашка является достаточно гибкой для повторения ...

СПОСОБ ПОЛУЧЕНИЯ НА ЛИСТОВОМ МАТЕРИАЛЕ ДИФРАКЦИОННОЙ РЕШЕТКИ ИЗ МОНОКРИСТАЛЛОВ МЕТАЛЛОВ, ИХ СПЛАВОВ, ПОЛУПРОВОДНИКОВ И УСТРОЙСТВО ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ

Изобретение относится к средствам для специальных видов печати, позволяющим получать на листовом материале защитные изображения. Способ получения на листовом материале дифракционной решетки из монокристаллов металлов, их сплавов, полупроводников заключается в том, что на листовой материал наносят раствор соли кристаллизуемых материалов, пропитывают листовой материал этим раствором и воздействуют на этот материал импульсами лазерного излучения, в течение которых на листовом материале создается интерференционная картина из линий. При этом монокристаллы выращивают вдоль этих линий и из их совокупности образуют дифракционную решетку. Кроме того, в устройстве, осуществляющем данный способ, обеспечивается создание на находящемся в естественной среде листовом материале дифракционной решетки из монокристаллов металлов, их сплавов, полупроводников. Заявленное техническое решение направлено на создание на листовом материале (банкноте) надежной защиты от подделки, идентифицируемой в ультрафиолетовой ...

СПОСОБ ПОЛУЧЕНИЯ НАНОЧАСТИЦ

... 1. Способ получения наночастиц, имеющих размер в пределах от 1 нм до 1000 нм, посредством синтеза флюидов одного или более прекурсоров, включающий обеспечение текучей среды, включающей флюид по меньшей мере одного прекурсора, и генерацию электрического искрового разряда в вышеуказанной текучей среде для обеспечения пиролиза вышеупомянутого флюида по меньшей мере одного прекурсора в ядре сравнительно горячей короткоживущей плазмы искрового разряда, которая имеет небольшой пространственный объем, для получения частиц по меньшей мере одного радикала и формирования наночастиц путем образования зародышей в текучей среде в реакционной зоне охлаждения, окружающей ядро плазмы искрового разряда, в котором вышеуказанные частицы по меньшей мере одного радикала действуют в качестве реагента или катализатора в процессе синтеза материала, содержащего вышеуказанные наночастицы.2. Способ по п. 1, в котором искровой разряд вызывается электрическим разрядом, имеющим частоту от 0,01 Гц до 1 кГц.3. Способ ...

ТВЕРДЫЕ ФОРМЫ ИНГИБИТОРА TTK

A Paramyxoviridae family N protein-RNA complex in crystal form

The application claims an N-RNA complex in crystal form comprising an N protein (nucleoprotein) of a non-segmeneted negative strand RNA virus of the Paramyxoviridae family such as Respiratory Respiratory Syncytial Virus or fragment thereof in complex with an RNA molecule, wherein the N proteins are organized in a distinct ring. Methods for producing such a N-RNA complex or crystal, to uses and applications thereof, including methods for identifying or developing a compound, which inhibits or prevents the replication and/or transcription of said virus and a computer system for such methods are claimed.

Continuous ZnO films

High quality zinc oxide (ZnO) films are fabricated, which comprise densely packed ZnO nanorods only at the surface (see Fig. 4), or composite/hybrid piezoelectric (PE)-films with ZnO nanostructures 3 embedded in other piezoelectric materials at the surface such as piezoelectric polymer or powders 4. ZnO nanorods with large aspect ratio 3 are synthesized by solution, and hybrid films are fabricated by embedding the nanorods in other piezoelectric materials and sintering to form continuous surface films. The films possess high piezoelectric, electrical and optoelectric properties owing to nanodimensions, quantum confinement and high crystallinity. The film surfaces are smooth and continuous both crystallographically and acoustically, therefore are suitable for fabrication of piezoelectric devices and microsystems such as surface acoustic wave (SAW) devices, film bulk acoustic wave devices, power generators and electronic devices such as solar cells, laser and light emission device and transistors ...

Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission

Enhanced perovskite materials for photovoltaic devices

A perovskite material that has a perovskite crystal lattice having a formula of C ...

SOLID FORMS OF TTK INHIBITOR

The present invention relates to a novel co-crystal of the compound of formula (I): (Formula (I)) wherein the co-former molecule is bisphosphate hemihydrate, to processes for the preparation of the co-crystal, to pharmaceutical compositions containing the co-crystal, to the use of such a co-crystal in the manufacture of a medicament for use in the treatment of cancer and to methods of treating such diseases in the human or animal body by administering a therapeutically effective amount of such a co-crystal.

PRODUCTION OF CRYSTALLINE CELLULOSE

Metal fine particle, method for producing metal fine particle, composition containing same, optical absorbing material and application thereof

METHOD AND APPARATUS FOR PRODUCING LARGE-AREA MONOLAYER FILMS OF SOLUTION DISPERSED NANOMATERIALS

Synthesis, capping and dispersion of nanocrystals

Metal nanorods method of manufacturing and use thereof

MANUFACTORING PROCESS Of a PART OUT OF AMORPHOUS SILICA FRITTEE, MOULD AND BARBOTINE IMPLEMENTED IN THIS PROCESS

NOVEL COMPLEXES OF METAL IONS FOR THE CRYSTALLIZATION OF BIOLOGICAL MACROMOLECULES AND DETERMINING CRYSTAL STRUCTURE

L'invention concerne des nouveaux complexes ligand / ion métallique neutres ou cationiques formés d'un ion métallique choisi parmi les métaux de transitions ou de post transition, à l'exception des ions lanthanides Ln3+, et d'un ligand répondant à l'une des formules suivantes : avec n, R2, R4, R1 et R1', tels que définis en revendication 1, et leurs sels avec un anion lorsque le complexe est cationique, solvats et hydrates. L'invention a également pour objet l'utilisation d'un tel complexe en tant qu'aide à la cristallisation d'une macromolécule biologique ainsi que les cristaux dérivés d'une macromolécule biologique comprenant un tel complexe.

PROCEEDED OF PREPARATION OF CRYSTALLINE PARTICLES OF THE SPANGLES KIND OF COMPOSE BASIC OF ZINC AND NEW PRODUCTS THUS OBTAINED

PROCESS OF PRODUCTION OF CRYSTALS OF HIGH PERFECTION STARTING FROM A MASS OF MOLTEN SUBSTANCE EXEMPTS CONVECTION

PROCESSES FOR SYNTHESIZING NANOCRYSTALS

... 유기 용매 중에서 금속 전구체, 비금속 전구체, 리간드 화합물, 및 이온성 액체를 포함하는 반응 혼합물을 얻는 단계; 및 상기 반응 혼합물 내에서 상기 금속 전구체와 상기 비금속 전구체 간의 반응을 수행하여 제1 반도체 나노 결정을 형성하는 단계를 포함하는 나노 결정 합성 방법이 제공된다.

자외선 방어제 조성물의 제조 방법 및 그에 의해 얻어진 자외선 방어제 조성물

... 투명성이 높고, 또한 자외선 영역인 파장 200 ~ 420nm의 광선의 방어 능력이 뛰어난 자외선 방어제 조성물의 제조 방법 및 이 제조 방법에 의해 얻어진 자외선 방어제 조성물을 제공하는 것을 과제로 한다 . 적어도 Fe3+ 이온을 포함하는 산화철 원료 유체와, 적어도 염기성 물질을 포함하는 산화철 석출 유체를 마이크로 리액터를 사용하여 혼합시켜 산화철 입자를 석출시키는 공정 (a)와, 상기 석출시킨 산화철의 미립자를 분산매에 분산시켜 산화철 미립자 분산체를 얻는 공정 (b)를 적어도 포함하는 자외선 방어제 조성물의 제조 방법이며, 상기 산화철 미립자 분산체의 헤이즈 값이 2.0 % 이하이고, 또한 상기 산화철 미립자 분산체의 파장 200 ~ 420nm에서의 광선의 투과율이 2.0 % 이하이다.

박막 태양 전지를 위한 구리-인듐-갈륨-칼코게나이드 나노 입자 전구체

IUPAC 11족 이온, 13족 이온 및 황 이온을 포함하는 나노 입자는 유기 용매에 금속염 및 알칸 티올을 첨가하고, 가열하여 반응을 촉진시킴으로써 합성된다. 상기 나노 입자는 200℃ 정도의 낮은 온도에서 형성된다. 상기 나노 입자는 토폴로지(topology)를 개선하고 크기 분포를 좁히기 위해, 반응 온도보다 낮은 온도에서 일정 시간 동안 열적으로 어닐링될 수 있다(일반적으로 ~40℃ 이하). 반응이 완료된 후, 나노 입자는 나노 입자 잉크를 형성하기 위해, 비용매의 첨가에 의해 분리되고, 톨루엔, 클로로포름 및 헥산과 같은 유기 용매로 재분산될 수 있다. 최종 잉크의 점도를 조정하기 위해 첨가제가 반응 용액에 혼합될 수 있다.

PREPARATION OF SOLVENT AND POLYMER REDISPERSIBLE FORMULATIONS OF DRIED CELLULOSE NANOCRYSTALS (CNC)

METHOD FOR PRODUCING OXIDE CRYSTAL THIN FILM

Provided is a method for producing a thin film, whereby it becomes possible to achieve both the reduction in concentration of carbon impurities and a high film formation speed and it also becomes possible to produce different crystal structures in accordance with the intended use steadily. According to the present invention, a method for producing an oxide crystal thin film is provided, which comprises a step of supplying raw material microparticles into a film formation chamber by the action of a carrier gas to form an oxide crystal thin film on a film formation sample placed in the film formation chamber, wherein the raw material microparticles are produced by transforming a raw material solution, which is a solution comprising a gallium compound and/or an indium compound and water, into microparticles, and wherein the gallium compound and/or the indium compound is a bromide or an iodide.

NANOWIRE PREPARATION METHODS, COMPOSITIONS, AND ARTICLES

Preparation methods, compositions, and articles useful for electronic and optical applications are disclosed. Such methods reduce metal ions to metal nanowires in the presence of bromide ions, IUPAC Group 14 elements in their +2 oxidation state, and optionally chloride ions. The product nanowires are useful in electronics applications.

Spatially-Controlled Synthesis of Palladium-Rhodium Hetero-Nanostructures

In a method of generating a nanocrystal with a core-frame structure, a seed crystal, including a first substance, is exposed to a capping agent. The seed nanocrystal has a plurality of first portions that each has a first characteristic and a plurality of second portions that each has a second characteristic, different from the first characteristic. The capping agent has a tendency to adsorb to portions having the first characteristic and has a tendency not to adsorb to portions having the second characteristic. As a result, a selectively capped seed nanocrystal is generated. The selectively capped seed nanocrystal is exposed to a second substance that has a tendency to nucleate on the plurality of second portions and that does not have a tendency to nucleate on portions that have adsorbed the capping agent, thereby generating a frame structure from the plurality of second portions of the seed nanocrystal.

Method for conducting reactions involving biological molecules in plugs in a microfluidic system

The present invention provides microfabricated substrates and methods of conducting reactions within these substrates. The reactions occur in plugs transported in the flow of a carrier-fluid.

METHOD OF MAKING QUANTUM DOTS

Quantum dots and methods of making quantum dots are provided. 1. A method for making quantum dots comprising:combining quantum dot precursors in a liquid medium at a reaction temperature to form a reaction mixture;quenching the reaction mixture to arrest nucleation, growth and ripening thereby resulting in quantum dots; andcombining the quantum dots with additional quantum dot precursors under conditions suitable to increase the size of the quantum dots.2. A method in accordance with wherein the quantum dot precursors include a first quantum dot precursor comprising an X donor wherein X comprises oxygen claim 1 , sulfur claim 1 , selenium claim 1 , tellurium claim 1 , nitrogen claim 1 , phosphorus claim 1 , arsenic claim 1 , or antimony.3. A method in accordance with wherein the quantum dot precursors include a second quantum dot precursor comprising a metal claim 1 , wherein the metal comprises cadmium claim 1 , zinc claim 1 , magnesium claim 1 , mercury claim 1 , aluminum claim 1 , gallium claim 1 , indium claim 1 , thallium claim 1 , lead or germanium.4. A method in accordance with wherein the solution further includes carboxylate species.5. A method in accordance with wherein the solution further includes a phosphonate species.6. A method in accordance with wherein the solution further includes a phosphonite species.7. A method in accordance with wherein the step of quenching includes rapidly cooling the reaction mixture immediately upon completion of combining the quantum dot precursors.8. A method in accordance with wherein the step of quenching includes rapidly cooling the reaction mixture immediately upon completion of combining the quantum dot precursors and prior to ripening.9. A method in accordance with wherein the reaction mixture is cooled to a temperature that is about 200° C. or below.10. A method in accordance with wherein the reaction mixture is cooled to a temperature that is about 100° C. or below and further comprising isolating the quantum dots ...

Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission

A nanoparticle coated with a semiconducting material and a method for making the same. In one embodiment, the method comprises making a semiconductor coated nanoparticle comprising a layer of at least one semiconducting material covering at least a portion of at least one surface of a nanoparticle, comprising: (A) dispersing the nanoparticle under suitable conditions to provide a dispersed nanoparticle; and (B) depositing at least one semiconducting material under suitable conditions onto at least one surface of the dispersed nanoparticle to produce the semiconductor coated nanoparticle. In other embodiments, the nanoparticle comprises a fullerene. Further embodiments include the semiconducting material comprising CdS or CdSe.

SYNTHESIS, CAPPING AND DISPERSION OF NANOCRYSTALS

Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films.

DOPED SEMICONDUCTOR NANOCRYSTALS, METHOD FOR PREPARING SAME AND USES THEREOF

A set of nanocrystals comprising a semiconductor comprising A representing a metal or metalloid in the +III oxidation state and B representing an element in the −III oxidation state, the nanocrystals being doped, on average per nanocrystal, by an atom of C chosen from the transition metals in the +I or +II oxidation state and various uses thereof.

Process for group III-V semiconductor nanostructure synthesis and compositions made using same

Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.

Organic-inorganic hybrid perovskite nanocrystals and methods of making the same

Organic-inorganic perovskite nanoparticle compositions are described herein. In some embodiments, a nanoparticle composition comprises a layer of organic-inorganic perovskite nanocrystals, the organic-inorganic perovskite nanocrystals comprising surfaces associated with ligands of size unable to incorporate into octahedral corner sites of the perovskite crystal structure.

Mixed-Valence Crystal Superstructures

Disclosed herein is a mixed-valence crystal superstructure assembled from a 2: 1 host-guest inclusion complex. The complex comprises an aromatic guest encircled by two macrocycles, wherein the complex has an empirical charge greater than 0 and less than 1. Methods of preparing the compositions described herein are also disclosed.

METHOD FOR PREPARING DOPED YTTRIUM ALUMINUM GARNET SINGLE CRYSTAL FIBER

The present disclosure provides a method for preparing a doped YAG single crystal fiber. The method may include preparing a doped YAG crystal rod; preparing a doped YAG single crystal fiber core by immersing at least a portion of the doped YAG crystal rod in an acid solution; performing a cylindrical surface polishing operation on the doped YAG single crystal fiber core by causing a stirrer to rotate to drive a polishing liquid to rotate; placing the doped YAG single crystal fiber core into a growth zone of a growth chamber and placing a raw material into a dissolution zone of the growth chamber; heating the growth zone and the dissolution zone by a two-stage heating device, respectively; and preparing a doped YAG single crystal fiber by growing a YAG single crystal fiber cladding on a surface of the doped YAG single crystal fiber core.

BIOTEMPLATED PEROVSKITE NANOMATERIALS

A biotemplated nanomaterial can include a crystalline perovskite. 129-. (canceled)30. A method of making a perovskite nanomaterial comprising:combining an aqueous solution of a biotemplate having affinity for a metal ion and an inorganic precursor of a perovskite material to form an aqueous mixture, andreacting the inorganic precursor and the biotemplate to form the perovskite nanomaterial,wherein the perovskite comprises strontium titanate, bismuth ferrite, sodium tantalate, zirconium oxide/tantalum oxynitride, zirconium tantalum oxynitride, tantalum oxynitride, or zirconium tantalum nitride.31. The method of claim 30 , wherein the biotemplate includes a virus particle.32. The method of claim 31 , wherein the virus particle is an M13 bacteriophage.33. The method of claim 30 , wherein the inorganic precursor comprises a first inorganic ion and a second inorganic ion.34. The method of claim 33 , further comprising forming an ion source including the first inorganic ion and the second inorganic ion before forming the aqueous mixture.35. The method of claim 33 , further comprising adjusting the pH of the aqueous mixture and incubating the aqueous mixture for a predetermined time at a predetermined temperature.36. The method of claim 33 , further comprising incubating the aqueous mixture and then calcining the reaction products.37. A method of making a perovskite nanomaterial comprising:combining an aqueous solution of a biotemplate having affinity for a metal ion and an inorganic precursor of a perovskite material to form an aqueous mixture, andreacting the inorganic precursor and the biotemplate to form the perovskite nanomaterial, {'br': None, 'sub': x', '1-x', 'y', '1-y', '3±δ, 'AA′BB′O\u2003\u2003(I)'}, 'wherein the perovskite has the formula (I)whereineach of A and A′, independently, are selected from the group consisting of Mg, Pb, and Bi;each of B and B′, independently, are selected from the group consisting of Zr, V, Nb, Mn, Fe, Ru, Rh, Ni, Pd, Pt, Al, and Mg;x ...

NANOSTRUCTURED METALS

HYBRID SOLAR CELLS WITH 3-DIMENSIONAL HYPERBRANCHED NANOCRYSTALS

METHOD FOR PRODUCING NITRIDE MONOCRYSTALS

(2R,4R)-5-(5′-ХЛОР-2′-ФТОРБИФЕНИЛ-4-ИЛ)-2-ГИДРОКСИ-4-[(5-МЕТИЛОКСАЗОЛ-2-КАРБОНИЛ)АМИНО]ПЕНТАНОВАЯ КИСЛОТА

СПОСОБ ПОЛУЧЕНИЯ МОНОКРИСТАЛЛИЧЕСКОГО ГАЛЛИЙСОДЕРЖАЩЕГО НИТРИДА И МОНОКРИСТАЛЛИЧЕСКИЙ ГАЛЛИЙСОДЕРЖАЩИЙ НИТРИД, ПОЛУЧАЕМЫЙ УКАЗАННЫМ СПОСОБОМ

ТВЕРДЫЕ ФОРМЫ ИНГИБИТОРА TTK

A method of synthesising nitride nanocrystals using organometallics

A method of producing nitride nanoparticles comprises reacting at least one organometallic compound, for example an alkyl metal such as diethyl zinc, with at least one source of nitrogen such as an amine. The reaction may involve one or more liquid phase organometallic compounds, or may involve one or more liquid phase organometallic compounds dissolved in a solvent or solvent mixture. The reaction constituents may be heated to a desired reaction temperature (for example in the range 40°C to 300°C). The nanoparticles produced may comprise zinc nitride and be light emissive nano crystals.

Nanoparticles

Structure of the N-RNA complex of the non-segmented negative-strand RNA viruses of the Paramyxoviridae family

DEVICE AND PROCEDURE FOR THE CRYSTALLIZATION USING HYDRODYNAMIC CAVITATION

PROCEDURE FOR THE PRODUCTION OF A PART FROM SINTERED AMORPHOUS SILICON OXIDE AND USED FORM AND MIXING INTO A PASTE WITH

Improved precipitation process for producing perovskite-based solar cells

A method for the preparation of a cohesive non-porous perovskite layer on a substrate (104) comprising: forming a thin film of a solution containing a perovskite material dissolved in a solvent onto the substrate to form a liquid film (104) of the solution on the substrate, applying a crystallisation agent (112) to a surface of the film to precipitate perovskite crystals from the 5 solution to form the cohesive non-porous perovskite layer (116) on the substrate.

Production of crystalline cellulose

A method of producing crystalline cellulose from a cellulosic material includes the step of reacting the cellulosic material in an aqueous slurry comprising a transition metal catalyst and a hypohalite solution.

Method for synthesizing core shell nanocrystals at high temperatures

The invention is in the field of nanostructure synthesis. The invention relates to methods for producing nanostructures, particularly Group III-V and Group II-VI semiconductor nanostructures, such as InP/ZnSe or In/ZnSe/ZnS core/shell nanoparticles. The invention also relates to high temperature methods of synthesizing nanostructures comprising simultaneous injection of cores and shell precursors.

Electro-less production of silicon nanowires and plates in a solution

A composition and method for creating silicon nanowires or silicon nano-plates is presented, the composition comprising: Potassium Hydroxide (KOH), at least one catalyst. Sodium Metal Siliconaie (Na ...

Synthesis of zinc MOF materials

Method for making a Zn MOF of formula Zn ...

Production of crystalline cellulose

A method of producing crystalline cellulose from a cellulosic material includes the step of reacting the cellulosic material in an aqueous slurry comprising a transition metal catalyst and a hypohalite solution.

PRODUCTION OF HIGH STRENGTH HYDROCHLORIC ACID FROM CALCIUM CHLORIDE FEED STREAMS BY CRYSTALLIZATION

The present relates to a method for producing calcium sulfate solid crystals and hydrochloric acid (HCI) from a calcium chloride solution comprising the steps of feeding a continuous stirred-tank reactor with a calcium chloride solution, sulfuric acid and water; mixing the calcium chloride solution, sulfuric acid and water in the reactor; and maintaining the reactor a temperature of less than about 70°C, converting the calcium chloride solution, sulfuric acid and water into HCI and calcium sulfate solid crystals. The method described herein can be incorporated as a means for regenerating HCI from CaCl2 solutions which are generated in the metallurgical industry when processing calcium- bearing ores for recovering metals like rare earth elements.

Nanoparticles

A nanoparticle comprised of a molecular cluster compound incorporating ions from groups (12) and (16) of the periodic table, and a core semiconductor material provided on said molecular cluster compound, wherein the core semiconductor material incorporates ions from groups (13) and (15) of the periodic table.

MICROFLUIDIC CHIP FOR CRYSTALLIZING MOLECULES OF, PREPARATION METHOD, DEVICE AND METHOD COMPRISING THE CRYSTALLIZATION OF MOLECULES

La présente invention concerne une puce microfluidique (1) comprenant au moins une cellule (11) de cristallisation à dialyse, ladite cellule (11) comprenant : - un support (1111) en PMMA - un premier étage comprenant un réservoir (111) délimité au moins en partie par ledit support (1111) et par une paroi externe (1112) de la cellule, ledit réservoir (111) étant en communication fluidique avec un canal d'entrée et un canal de sortie d'une solution permettant la mise en œuvre du procédé de cristallisation, - un second étage comprenant une chambre de dialyse (113) délimitée au moins en partie par une paroi interne (1113) de la cellule sans contact avec le support (1111) et par une membrane de dialyse (112) formant une interface entre le réservoir (111) et la chambre de dialyse (113), la paroi interne (1113) comprenant au moins une portion d'un seul tenant dans laquelle la périphérie de ladite membrane (112) est maintenue scellée. La présente invention concerne également un procédé de préparation ...

Material, useful as an active material in an electrode, and for the vibrational or chemical characterization of nanoscale object in Raman spectroscopy, comprises metallic silver and vanadium

La présente invention concerne un matériau constitué par de l'argent métallique (Ag0), du vanadium à l'état de valence IV (VIV), et du vanadium à l'état de valence V (VV). Il est préparé par un procédé comprenant les étapes consistant à : i. préparer une solution aqueuse d'un sel d'argent et d'un précurseur de vanadium agissant comme réducteur du sel d'argent, et ii. laisser réagir ladite solution pour former un précipité ...

육각주상 산화아연 입자, 그 제조 방법, 및 그것을 배합한 화장료, 방열성 필러, 방열성 수지 조성물, 방열성 그리스 및 방열성 도료 조성물

... [과제] 특정의 입자경 및 어스펙트비를 가지며, 높은 자외선 차폐성과 투명성을 갖기 때문에, 화장료나 방열재로서 호적하게 사용할 수 있는 육각주상 산화아연 입자를 얻는다. [해결 수단] 일차 입자경이 0.1㎛ 이상 0.5㎛ 미만, 어스펙트비가 2.5 미만인 육각주상 산화아연 입자.

mÉtodo para preparaÇço de nanopartÍculas estabilizadas de metal

METAL CHALCOGENIDE SYNTHESIS METHOD AND APPLICATIONS

A method for synthesizing a metal chalcogenide nanocrystal (NC) material includes reacting a metal material and an ammonium chalcogenide material in an organic solvent material. The method provides that the metal chalcogenide nanocrystal material may be synthesized by a heating-up method at large scale (i.e., greater than 30 grams). Ammonium chalcogenide salts exhibit high reactivity and metal chalcogenide nanocrystals can be synthesized at low temperatures (i.e., less than 200oC) with high conversion yields (i.e., greater than 90 percent).

NANOPARTICLES

A nanoparticle comprised of a molecular cluster compound incorporating ions from groups (12) and (16) of the periodic table, and a core semiconductor material provided on said molecular cluster compound, wherein the core semiconductor material incorporates ions from groups (13) and (15) of the periodic table.

SILVER-NICKEL CORE-SHEATH NANOSTRUCTURES AND METHODS TO FABRICATE

Embodiments of the invention generally provide core-sheath nanostructures and methods for forming such nanostructures. In one embodiment, a method for forming core-sheath nanostructures includes stirring an aqueous dispersion containing silver nanostructures while adding a catalytic metal salt solution to the aqueous dispersion and forming catalytic metal coated silver nanostructures during a galvanic replacement process. The method further includes stirring an organic solvent dispersion containing the catalytic metal coated silver nanostructures dispersed in an organic solvent while adding a nickel salt solution to the organic solvent dispersion, and thereafter, adding a reducing solution to the organic solvent dispersion to form silver-nickel core-sheath nanostructures during a nickel coating process. In one embodiment, the core-sheath nanostructures are silver-nickel core-sheath nanowires, wherein each silver-nickel core-sheath nanowire has a sheath layer of nickel disposed over and ...

METHOD FOR PRODUCING NITRIDE MONOCRYSTALS

The inventive method exploits the fact that in solutions or melts which contain certain organic substances, small nitride crystallites consisting of GaN or AlN are formed by thermal reaction and decomposition. A vessel (1) containing the melt is kept at a first temperature T¿1. In said vessel is a substrate nucleus (2) of the nitride to be formed, which is heated to a second temperature T¿2 > T¿1 through the input of energy. Epitaxial growth from the melt then takes place on the surface of the substrate nucleus (2). The energy input can be carried out in different ways.

Systems and methods for mixing reactants

High throughput screening of crystallization of a target material is accomplished by simultaneously introducing a solution of the target material into a plurality of chambers of a microfabricated fluidic device. The microfabricated fluidic device is then manipulated to vary the solution condition in the chambers, thereby simultaneously providing a large number of crystallization environments. Control over changed solution conditions may result from a variety of techniques, including but not limited to metering volumes of crystallizing agent into the chamber by volume exclusion, by entrapment of volumes of crystallizing agent determined by the dimensions of the microfabricated structure, or by cross-channel injection of sample and crystallizing agent into an array of junctions defined by intersecting orthogonal flow channels.

BROAD-EMISSION NANOCRYSTALS AND METHODS OF MAKING AND USING SAME

In one aspect, the invention relates to an inorganic nanoparticle or nanocrystal, also referred to as a quantum dot, capable of emitting white light. In a further aspect, the invention relates to an inorganic nanoparticle capable of absorbing energy from a first electromagnetic region and capable of emitting light in a second electromagnetic region, wherein the second electromagnetic region comprises an at least about 50 nm wide band of wavelengths and to methods for the preparation thereof. In further aspects, the invention relates to a frequency converter, a light emitting diode device, a modified fluorescent light source, an electroluminescent device, and an energy cascade system comprising the nanoparticle of the invention. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

Low-temperature synthesis of colloidal nanocrystals

Low-temperature organometallic nucleation and crystallization-based synthesis methods for the fabrication of semiconductor and metal colloidal nanocrystals with narrow size distributions and tunable, size- and shape-dependent electronic and optical properties. Methods include (1) forming a reaction mixture in a reaction vessel under an inert atmosphere that includes at least one solvent, a cationic precursor, an anionic precursor, and at least a first surface stabilizing ligand while stirring at a temperature in a range from about 50° C. to about 130° C. and (2) growing nanocrystals in the reaction mixture for a period of time while maintaining the temperature, the stirring, and the inert-gas atmosphere.

Additive for the crystallization of proteins, use and process

The present invention relates to the use and to a process involving at least one calix[n]arene derivative substituted by at least one acid functional group on the upper face and at least one aliphatic chain of variable length on the other face, as an additive for crystallization of a polar and/or positively charged molecule. The use and the process of the present invention have the advantage of enabling, facilitating and/or accelerating the crystallization of polar and/or positively charged molecules, especially of membrane proteins that are in solution or soluble, which had previously proved to be very difficult.

Microfluidic Protein Crystallography Techniques

The present invention relates to microfluidic devices and methods facilitating the growth and analysis of crystallized materials such as proteins. In accordance with one embodiment, a crystal growth architecture is separated by a permeable membrane from an adjacent well having a much larger volume. The well may be configured to contain a fluid having an identity and concentration similar to the solvent and crystallizing agent employed in crystal growth, with diffusion across the membrane stabilizing that process. Alternatively, the well may be configured to contain a fluid having an identity calculated to affect the crystallization process. In accordance with the still other embodiment, the well may be configured to contain a material such as a cryo-protectant, which is useful in protecting the crystalline material once formed.

Nanowire preparation methods, compositions, and articles

Preparation methods, compositions, and articles useful for electronic and optical applications are disclosed. Such methods reduce metal ions to metal nanowires in the presence of bromide ions, IUPAC Group 14 elements in their +2 oxidation state, and optionally chloride ions. The product nanowires are useful in electronics applications.

ION ETCHING OF GROWING InP NANOCRYSTALS USING MICROWAVE

High quantum yield InP nanocrystals are used in the bio-technology, bio-medical, and photovoltaic, specifically IV, III-V and III-VI nanocrystal technological applications. InP nanocrystals typically require post-generation HF treatment. Combining microwave methodologies with the presence of a fluorinated ionic liquid allows Fluorine ion etching without the hazards accompanying HF. Growing the InP nanocrystals in the presence of the ionic liquid allows in-situ etching to be achieved. The optimization of the PL QY is achieved by balancing growth and etching rates in the reaction.

Controlled Fabrication of Semiconductor-Metal Hybrid Nano-Heterostructures via Site-Selective Metal Photodeposition

A method of synthesizing colloidal semiconductor-metal hybrid heterostructures is disclosed. The method includes dissolving semiconductor nanorods in a solvent to form a nanorod solution, and adding a precursor solution to the nanorod solution. The precursor solution contains a metal. The method further includes illuminating the combined precursor and nanorod solutions with light of a specific wavelength. The illumination causes the deposition of the metal in the precursor solution onto the surface of the semiconductor nanorods. 1. A method of synthesizing colloidal semiconductor-metal hybrid heterostructures , the method comprising:dissolving semiconductor nanorods in a solvent to form a nanorod solution;adding a precursor solution to the nanorod solution, the precursor solution containing a metal;illuminating the combined precursor and nanorod solutions with light of a specific wavelength, the illumination causing deposition of the metal in the precursor solution onto a surface of the semiconductor nanorods.2. The method of claim 1 , wherein each of the semiconductor nanorods has an axially anisotropic morphology.3. The method of claim 2 , wherein each of the semiconductor nanorods is oblong having a relatively thick first end that tapers to a relatively thin second end.4. The method of claim 3 , wherein the specific wavelength of the light determines on which end a majority of the metal is deposited.5. The method of claim 4 , wherein the specific wavelength of the light ranges from 350 nanometers to 575 nanometers.6. The method of claim 1 , wherein the metal comprises palladium.7. The method of wherein the precursor solution comprises cis-dimethyl(N claim 6 ,N claim 6 ,N′ claim 6 ,N′-tetramethylenediamine) palladium(II).8. The method of claim 1 , wherein the metal comprises platinum.9. The method of wherein the precursor solution comprises dimethyl (1 claim 8 ,5-cyclooctadiene) platinum (II).10. The method of claim 1 , wherein the semiconductor nanorods comprise ...

MANGANESE OXIDE PARTICLES AND PROCESS FOR PRODUCING SAME

A manganese oxide particle having a hexagonal crystal structure or an analogous hexagonal crystal structure with an a-axis length of 8.73±1 Å and a c-axis length of 14.86±1 Å. The manganese oxide particle is preferably produced by a process including mixing an aqueous solution containing manganese (II) and an organic compound having a hydroxyl group while in a heated state with an alkali. 1. A manganese oxide particle having a hexagonal crystal structure or an analogous hexagonal crystal structure with an a-axis length of 8.73±1 Å and a c-axis length of 14.86±1 Å.2. The manganese oxide particle according to claim 1 , having a powder XRD (Cu/Kα) pattern showing diffraction peaks at a 2θ angle of at least 11.9±1° claim 1 , 24.0±1° claim 1 , and 36.3±1°.3. The manganese oxide particle according to claim 1 , being substantially free from a dopant element.4. A process for producing the manganese oxide particle of claim 1 , comprising mixing an aqueous solution containing manganese (II) and an organic compound having a hydroxyl group claim 1 , while in a heated state claim 1 , with an alkali.5. The process according to claim 4 , wherein the organic compound having a hydroxyl group is polyvinyl alcohol claim 4 , a polyol claim 4 , or a monohydric lower alcohol.6. A process for producing the manganese oxide particle according to claim 1 , comprising mixing an aqueous solution containing manganese (II) claim 1 , while in a heated state claim 1 , with an amount of an alkali claim 1 , the amount being such that generates OH in an amount 0.1 to 3.0 times the number of moles of the manganese (II).7. The manganese oxide particle according to claim 2 , being substantially free from a dopant element. This invention relates to novel manganese oxide particles having a layer structure and a process for producing the same.Conventional techniques relating to manganese oxide having a layer structure include the technique described in patent literature 1 below. The manganese oxide ...

SYNTHESIS, CAPPING AND DISPERSION OF NANOCRYSTALS

Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films. 1. A method of making nanocrystals comprisingdissolving or mixing precursors of said nanocrystals in at least one solvent to produce a solution,optionally at least one of heating and increasing pressure of said solution, andreacting said precursors or said precursors and said at least one solvent of said solution to form said nanocrystals.2. The method of wherein said nanocrystals are capped with at least one agent to increase the solubility or dispersibility of said nanocrystals in said at least one solvent or other materials.3. The method of wherein said at least one agent comprises at least one organosilane claim 2 , organocarboxylic acid or organoalcohol.4. The method of wherein said at least one agent to cap said nanocrystals is included in the solution.5. The method of wherein said at least one agent to cap said nanocrystals is contacted with said solution prior claim 4 , during or after said reacting.6. The method of further comprising purifying and/or separating said nanocrystals.7. The method of further comprising capping said purified and/or separated nanocrystals with at least one capping agent to produce at least partially capped nanocrystals.8. The method of further comprising purifying and/or separating said at least partially capped nanocrystals.9. The method of further comprising contacting said nanocrystals with a further solvent.10. The method of further comprising contacting said at least partially capped nanocrystals with a further solvent. ...

Synthesis, capping and dispersion of nanocrystals

Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films.

BROAD-EMISSION NANOCRYSTALS AND METHODS OF MAKING AND USING SAME

In one aspect, the invention relates to an inorganic nanoparticle or nanocrystal, also referred to as a quantum dot, capable of emitting white light. In a further aspect, the invention relates to an inorganic nanoparticle capable of absorbing energy from a first electromagnetic region and capable of emitting light in a second electromagnetic region, wherein the second electromagnetic region comprises an at least about 50 nm wide band of wavelengths and to methods for the preparation thereof. In further aspects, the invention relates to a frequency converter, a light emitting diode device, a modified fluorescent light source, an electroluminescent device, and an energy cascade system comprising the nanoparticle of the invention. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention. 1. A method of preparing an inorganic nanoparticle comprising the steps of:{'sub': 8', '20, 'a) heating a reaction mixture comprising a Cto Calkyl- or arylphosphonic acid and a source of cadmium or zinc to a temperature of greater than about 300° C.;'}{'sub': 2', '10, 'b) adding to the reaction mixture an injection mixture comprising a Cto Ctrialkyl- or triarylphosphine and a source of selenium, sulfur, or tellurium; and'}c) decreasing the temperature of the reaction mixture to less than about 300° C.2. The method of claim 1 , wherein the reaction mixture further comprises at least one of a Cto Ctrialkyl- or triarylphosphine oxide claim 1 , or a Cto Calkylamine or arylamine claim 1 , or a mixture thereof.3. The method of claim 1 , wherein the injection mixture further comprises a Cto Chydrocarbon.4. The method of claim 1 , further comprising the step of adding a solvent to the reaction mixture so as to decrease the temperature of the reaction mixture to less than about 250° C.5. The method of claim 1 , wherein the source of cadmium or zinc comprises cadmium oxide.6. The method of claim 1 , ...

COLLOIDAL INFRARED REFLECTIVE AND TRANSPARENT CONDUCTIVE ALUMINUM-DOPED ZINC OXIDE NANOCRYSTALS

The present invention provides a method of preparing aluminum-doped zinc oxide (AZO) nanocrystals. In an exemplary embodiment, the method includes (1) injecting a precursor mixture of a zinc precursor, an aluminum precursor, an amine, and a fatty acid in a solution of a vicinal diol in a non-coordinating solvent, thereby resulting in a reaction mixture, (2) precipitating the nanocrystals from the reaction mixture, thereby resulting in a final precipitate, and (3) dissolving the final precipitate in an apolar solvent. The present invention also provides a dispersion. In an exemplary embodiment, the dispersion includes (1) nanocrystals that are well separated from each other, where the nanocrystals are coated with surfactants and (2) an apolar solvent where the nanocrystals are suspended in the apolar solvent. The present invention also provides a film. In an exemplary embodiment, the film includes (1) a substrate and (2) nanocrystals that are evenly distributed on the substrate. 1. A method of preparing aluminum-doped zinc oxide nanocrystals comprising:injecting a precursor mixture of a zinc precursor, an aluminum precursor, an amine, and a fatty acid in a solution of a vicinal diol in a non-coordinating solvent, thereby resulting in a reaction mixture;precipitating the nanocrystals from the reaction mixture, thereby resulting in a final precipitate; anddissolving the final precipitate in an apolar solvent.2. The method of wherein the injecting comprises injecting the precursor mixture claim 1 , wherein the zinc precursor is selected from the group consisting of zinc stearate claim 1 , zinc acetylacetonate claim 1 , and zinc acetate.3. The method of wherein the injecting comprises injecting the precursor mixture claim 1 , wherein the aluminum precursor is selected from the group consisting of aluminum acetylacetonate claim 1 , aluminum stearate claim 1 , and aluminum oleate.4. The method of wherein the injecting comprises injecting the precursor mixture claim 1 , ...

BIOTEMPLATED PEROVSKITE NANOMATERIALS

A biotemplated nanomaterial can include a crystalline perovskite. 1. A method of making a nanomaterial comprising forming a perovskite in the presence of a biotemplate having affinity for a metal ion.2. The method of claim 1 , wherein the biotemplate includes a virus particle.3. The method of claim 2 , wherein the virus particle is an M13 bacteriophage.4. The method of claim 1 , wherein forming the perovskite includes forming an aqueous mixture including the biotemplate claim 1 , a first inorganic ion claim 1 , and a second inorganic ion.5. The method of claim 4 , further comprising forming an ion source including the first inorganic ion and the second inorganic ion before forming the aqueous mixture.6. The method of claim 4 , further comprising adjusting the pH of the aqueous mixture and incubating the aqueous mixture for a predetermined time at a predetermined temperature.7. The method of claim 4 , further comprising calcining the reaction products after incubating the aqueous mixture.8. The method of claim 1 , wherein the perovskite has the formula (I):{'br': None, 'sub': x', '1-x', 'y', '1-y', '3±δ, 'AA′BB′O\u2003\u2003(I)'}whereineach of A and A′, independently, is a rare earth, alkaline earth metal, or alkali metal;each of B and B′, independently, is a transition metal;x is in the range of 0 to 1;y is in the range of 0 to 1; andδ is in the range of 0 to 1.9. The method of claim 8 , wherein A and A′ claim 8 , independently claim 8 , are selected from the group consisting of Mg claim 8 , Ca claim 8 , Sr claim 8 , Ba claim 8 , Pb claim 8 , and Bi; and B and B′ claim 8 , independently claim 8 , are selected from the group consisting of Ti claim 8 , Zr claim 8 , V claim 8 , Nb claim 8 , Mn claim 8 , Fe claim 8 , Ru claim 8 , Co claim 8 , Rh claim 8 , Ni claim 8 , Pd claim 8 , Pt claim 8 , Al claim 8 , and Mg.10. The method of claim 8 , wherein the perovskite is a strontium titanate.11. The method of claim 8 , wherein the perovskite is a bismuth ferrite.12. The ...

Method for Manufacturing Silver Nanowires

Provided is a method for producing Ag nanowires, including, heating a precursor solution that includes: an Ag salt; a water-soluble polymer; a surfactant, or a halide of metal ions having a standard reduction potential of −0.1 to −0.9V as a metal catalyst; and a reduction solvent, to produce the Ag nanowires. According to this method, a time for synthesizing nanowires may be considerably decreased, and an amount of Ag precursor discarded without reaction may be effectively reduced. As a result, the Ag nanowires may be produced with high efficiency and mass-production thereof through a simple scale-up may be successfully achieved.

METHODS FOR PREPARING TRIMANGANESE TETROXIDE WITH LOW BET SPECIFIC SURFACE AREA, METHODS FOR CONTROLLING PARTICLE SIZE OF TRIMANGANESE TETROXIDE AND TRIMANGANESE TETROXIDE PRODUCT

The present invention provides methods for preparing trimanganese tetroxide with low BET specific surface area and methods for controlling particle size of trimanganese tetroxide and trimanganese tetroxide product. 1. A method for preparing trimanganese tetroxide , comprising:(1) a process for purifying air comprising purifying air by spraying dilute aqueous ammonia;{'sub': 4', '4', '2', '4', '2', '2', '4, '(2) a pretreatment of removing impurities from a MnSOsolution comprising adjusting pH value of the MnSOsolution with a concentration in a range of 150˜200 g/L to 5.5-6.0, introducing HS gas into the MnSOsolution until pH value reaches 2.5-3.0, separating the mixture by solid-liquid separation to obtain a filtrate and a solid, purifying the filtrate by removing impurities with oxidization of HO, adjusting pH value of the filtrate to 5-6 with a base, and separating the obtained mixture by solid-liquid separation to obtain a filtrate and a solid, so as to obtain MnSOsolution as filtrate for use;'}{'sub': 4', '4', '3', '4', '3', '4', '3', '4, '(3) a process for preparing seed crystal comprising cooling the MnSOsolution obtained in the pretreatment (2) from MnSOsolution to a temperature of less than 40° C., and introducing liquid NHinto the cooled MnSOsolution until pH value reaches 10.5-11.0, separating the mixture by solid-liquid separation to obtain a filtrate and a solid; washing the obtained solid, adding deionized water to the washed solid and forming a slurry, introducing the purified air obtained in the process (1) into the slurry, and oxidizing the slurry into MnO; separating the mixture by solid-liquid separation to obtain filtrate and solid, so as to obtain MnOseed crystal as solid for use; and'}{'sub': 4', '4', '3', '4', '3', '4', '4', '4', '4', '3', '4, '(4) a process for obtaining the final product by controlling oxidization comprising adding the MnSOsolution obtained in the pretreatment (2) from MnSOsolution into an oxidization reactor, adding MnOseed ...

NICKEL MANGANESE COMPOSITE HYDROXIDE PARTICLES AND MANUFACTURING METHOD THEREOF, CATHODE ACTIVE MATERIAL FOR A NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY AND MANUFACTURING METHOD THEREOF, AND A NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY

Provided are nickel manganese composite hydroxide particles having a small and uniform particle size and having a double structure which enables to obtain a cathode active material having a hollow structure, and a manufacturing method thereof. When obtaining the nickel manganese composite hydroxide by a reaction crystallization, using an aqueous solution for nucleation, which includes at least a metallic compound that contains nickel, a metallic compound that contains manganese and an ammonium ion donor and controlling the pH value that is measured at a standard solution temperature of 25° C. is 10.5 to 12.0, nucleation is performed in an oxidizing atmosphere in which the oxygen concentration is greater than 1% by volume, and then nuclei are grown by switching the atmosphere from the oxidizing atmosphere to a mixed atmosphere of oxygen and inert gas in which the oxygen concentration is 1% by volume or less. 1. A manufacturing method for manufacturing nickel manganese composite hydroxide particles using a reaction crystallization , the nickel manganese composite hydroxide particles being expressed by a general formula of NiMnCoM(OH)(where x+y+z+t=1 , 0.3≦x≦0.7 , 0.1≦y≦0.55 , 0≦z≦0.4 , 0≦t≦0.1 , 0≦a≦0.5 , and M is one or more added elements that are selected from among Mg , Ca , Al , Ti , V , Cr , Zr , Nb , Mo and W) , the manufacturing method comprising:a nucleation step of controlling an aqueous solution for nucleation, which includes at least a metallic compound that contains nickel, a metallic compound that contains manganese, and an ammonium ion donor, so that a pH value thereof that is measured at a standard solution temperature of 25° C. is 12.0 to 14.0, and causing nucleation in an oxidizing atmosphere having an oxygen concentration of greater than 1% by volume; anda particle growth step of controlling an aqueous solution for particle growth, which includes nuclei formed in the nucleation step, so that a pH value that is measured at a standard solution ...

Synthesis, capping and dispersion of nanocrystals

Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films.

HEXAGONAL PRISM-SHAPED ZINC OXIDE PARTICLES, METHOD FOR PRODUCTION OF THE SAME, AND COSMETIC, HEAT RELEASING FILLER, HEAT RELEASING RESIN COMPOSITION, HEAT RELEASING GREASE, AND HEAT RELEASING COATING COMPOSITION COMPRISING THE SAME

It is an object of the present invention to provide hexagonal prism-shaped zinc oxide particles which have a specific particle diameter and a specific aspect ratio, and high ultraviolet blocking performance and transparency, and therefore can be suitably used as a cosmetic and a heat releasing material. Provided are hexagonal prism-shaped zinc oxide particles having a primary particle diameter of 0.1 μm or more and less than 0.5 μm and an aspect ratio of less than 2.5. 1. Hexagonal prism-shaped zinc oxide particles having a primary particle diameter of 0.1 μm or more and less than 0.5 μm and an aspect ratio of less than 2.5.2. The hexagonal prism-shaped zinc oxide particles according to claim 1 , which are obtained by aging zinc oxide fine particles as a seed in an aqueous solution in which a zinc salt is dissolved.3. The hexagonal prism-shaped zinc oxide particles according to claim 1 , wherein the D90/D10 in particle size distribution is 2.4 or less.4. A method for production of the zinc oxide particles according to claim 1 , comprising a step of aging zinc oxide fine particles as a seed in an aqueous solution in which a zinc salt is dissolved.5. A cosmetic comprising the hexagonal prism-shaped zinc oxide particles according to .6. A heat releasing filler comprising the hexagonal prism-shaped zinc oxide particles according to .7. A heat releasing resin composition comprising the hexagonal prism-shaped zinc oxide particles according to .8. A heat releasing grease comprising the hexagonal prism-shaped zinc oxide particles according to .9. A heat releasing coating composition comprising the hexagonal prism-shaped zinc oxide particles according to .10. The hexagonal prism-shaped zinc oxide particles according to claim 2 , wherein the D90/D10 in particle size distribution is 2.4 or less.11. A method for production of the zinc oxide particles according to claim 2 , comprising a step of aging zinc oxide fine particles as a seed in an aqueous solution in which a zinc salt ...

Segmented metallic nanostructures, homogeneous metallic nanostructures and methods for producing same

The present invention includes a method of producing a segmented 1D nanostructure. The method includes providing a vessel containing a template wherein on one side of the template is a first metal reagent solution and on the other side of the template is a reducing agent solution, wherein the template comprises at least one pore; allowing a first segment of a 1D nanostructure to grow within a pore of the template until a desired length is reached; replacing the first metal reagent solution with a second metal reagent solution; allowing a second segment of a 1D nanostructure to grow from the first segment until a desired length is reached, wherein a segmented 1D nanostructure is produced.

PREPARATION OF NANORODS

A method of preparing a core-shell nanorod can include growing a shell of a core-shell nanorod (M1X1)M2X2 in a solution through a slow-injection of M2 precursor solution and X2 precursor solution, wherein the core-shell nanorod includes a M1X1 core. 1. A method of preparing a core-shell nanorod comprising growing a shell of a core-shell nanorod (M1X1)M2X2 in a solution through a slow-injection of M2 precursor solution and X2 precursor solution to a suspension of M1X1 nanocrystals , wherein the core-shell nanorod includes a M1X1 core.2. The method of claim 1 , wherein the core nanocrystal includes CdSe.3. The method of claim 1 , wherein the shell includes CdS.4. The method of claim 1 , wherein the solution includes an acid.5. The method of claim 1 , wherein the solution includes an amine.6. The method of claim 1 , further including degassing the solution.7. The method of claim 1 , further including growing the core-shell nanorod at a temperature of no higher than 310° C.8. The method of claim 1 , wherein the slow-injection rate of M2 precursor is less than 0.4 mmol per hour.9. The method of claim 1 , wherein the slow-injection rate of X2 precursor is less than 0.4mmol per hour.10. The method of claim 1 , wherein the M2 precursor solution includes 1-octadecene.11. The method of claim 1 , wherein the X2 precursor solution includes 1-octadecene.12. The method of claim 1 , wherein concentration of the M2 precursor is between 0.05 M-0.20 M.13. The method of claim 1 , wherein concentration of the X2 precursor is between 0.07 M-0.30 M. This application claims priority to U.S. Provisional Application No. 62/188,177, filed Jul. 2, 2015, which is incorporated by reference in its entirety.Nanostructures frequently exhibit properties different from the corresponding bulk material. Changes in properties can be influenced by shape and size of the nanostructure. This is especially true for nanostructures having large aspect ratios, such as nanorods, which can differ quite ...

ONE-STEP IN SITU SOLUTION GROWTH FOR LEAD HALIDE PEROVSKITE

A method of forming lead halide perovskite crystals in a solvent. The perovskite is form by solution processing of an organic and inorganic precursor in a polar protic solvent. 1. A method of forming a lead halide perovskite comprising:dissolving an organic halide precursor in a polar protic solvent;dissolving an lead halide precursor in the solvent to form a reaction solution;reacting the organic halide precursor and the lead halide precursor at a reaction temperature of the solvent's boiling point; andforming lead halide perovskite crystals.2. The method of claim 1 , wherein the organic halide precursor is selected from methylammonium chloride claim 1 , methylammonium iodide claim 1 , and methylammonium bromide.3. The method of claim 1 , wherein the lead halide precursor is selected from lead chloride claim 1 , lead iodide claim 1 , and lead bromide.4. The method of wherein the organic halide precursor and the lead halide precursor each comprise an identical halide.5. The method of claim 1 , wherein the organic halide precursor and the lead halide precursor are present in substantially a 1:1 molar ratio in the solvent prior to reacting.6. The method of claim 1 , wherein the polar protic solvent is an alcohol.7. The method of claim 1 , further comprising evaporating the solvent after formation of lead halide perovskite crystals.8. The method of claim 7 , wherein the evaporation is in an inert environment.9. The method of claim 1 , wherein within 20%+/−of the boiling point comprises at the boiling point.10. The method of claim 1 , wherein the reaction solvent has a concentration of organic precursor plus inorganic precursor of at least 40 wt %.11. A method of forming a perovskite comprising:dissolving an organic halide precursor in an alcohol solvent;dissolving an lead halide precursor in the alcohol solvent;forming a reaction solution having a concentration of dissolved organic halide precursor plus dissolved lead halide precursor of at least 40 wt % and the ...

Flex plate with removable inserts and cover

Technologies are described for methods and systems effective for flex plates. The flex plates may comprise a base plate. The base plate may include walls that define an insert location opening in the base plate. The insert location opening in the base plate may be in communication with a securement area. The flex plates may comprise an insert. The insert may include a reservoir region and a crystallization region separated by a wall including channels. The reservoir region and the crystallization region may include a backing. The insert may further include securement tabs. The securement tabs may be configured to secure the insert to the base plate at the securement area.

CRYSTAL GROWTH APPARATUS

The present invention relates to an apparatus for growing crystals. The apparatus comprises a chamber and a crucible being arranged in a heatable accommodation space of the chamber, wherein the crucible comprises an inner volume which is configured for growing crystals inside. The crucible comprises a bottom from which respective side walls extend to a top section of the crucible. The crucible comprises at least one a deposition section which is configured for attaching a seed crystal, wherein the deposition section is formed on at least one of the side wall and the top section of the crucible. 2. Apparatus according to claim 1 ,wherein the bottom is free of a deposition section for a seed crystal.3. Apparatus according to claim 1 ,wherein the crucible extends between the bottom and the top section along a vertical direction.4. Apparatus according to claim 1 ,wherein the crucible comprises plurality of deposition sections, each being configured for attaching a seed crystal,wherein the deposition sections are spaced apart from each other and are formed on at least one of the side wall and the top section of the crucible.5. Apparatus according to claim 1 ,wherein the crucible comprises at least one protrusion extending from an inner surface, in particular from the side wall or the top section of the crucible, into the inner volume,wherein the deposition section is formed at the protrusion.6. Apparatus according to claim 5 ,wherein the crucible comprises a plurality of protrusions extending from the inner surface of the crucible into the inner volume,wherein the protrusions are spaced apart from each other.7. Apparatus according to claim 1 ,wherein the crucible comprises at least one nozzle,wherein the nozzle is configured for injecting a reaction fluid into the inner volume of the crucible.8. Apparatus according to claim 7 ,wherein the at least one nozzle is configured for ejecting the reaction fluid in a direction towards one of the deposition sections.9. Apparatus ...

MONODISPERSE, IR-ABSORBING NANOPARTICLES AND RELATED METHODS AND DEVICES

Embodiments described herein generally relate to monodisperse nanoparticles that are capable of absorbing infrared radiation and generating charge carriers. In some cases, at least a portion of the nanoparticles are nanocrystals. In certain embodiments, the monodisperse, IR-absorbing nanocrystals are formed according to a method comprising a nanocrystal formation step comprising adding a first precursor solution comprising a first element of the nanocrystal to a second precursor solution comprising a second element of the nanocrystal to form a first mixed precursor solution, where the molar ratio of the first element to the second element in the first mixed precursor solution is above a nucleation threshold. The method may further comprise a nanocrystal growth step comprising adding the first precursor solution to the first mixed precursor solution to form a second mixed precursor solution, where the molar ratio of the first element to the second element in the second mixed precursor solution is below the nucleation threshold 1. A device , comprising:a layer comprising a plurality of nanocrystals, wherein the plurality of nanocrystals has a mean maximum cross-sectional dimension of about 2 nm or more with a relative standard deviation of about 10% or less, wherein the plurality of nanocrystals is capable of absorbing electromagnetic radiation having a wavelength of at least about 700 nm.2. The device of any preceding claim , wherein at least a portion of the plurality of nanocrystals are quantum dots.3. The device of any preceding claim , wherein at least a portion of the plurality of nanocrystals comprise PbS and/or PbSe.4. The device of any preceding claim , wherein substantially all of the nanocrystals comprise PbS and/or PbSe.5. The device of any preceding claim , wherein the relative standard deviation is about 5% or less.6. The device of any preceding claim , wherein the relative standard deviation is about 1% or less.7. The device of any preceding claim , ...

TRANSITION METAL COMPOSITE HYDROXIDE PARTICLES AND PRODUCTION METHOD THEREOF, CATHODE ACTIVE MATERIAL FOR NON-AQUEOUS ELECTROLYTE RECHARGEABLE BATTERY AND PRODUCTION METHOD THEREOF, AND NONAQUEOUS ELECTROLYTE RECHARGEABLE BATTERY

Provided is a cathode active material that can simultaneously improve the capacity characteristics, output characteristics, and cycling characteristics of a rechargeable battery when used as cathode material for a non-aqueous electrolyte rechargeable battery. After performing nucleation by controlling an aqueous solution for nucleation that includes a metal compound that includes at least a transition metal and an ammonium ion donor so that the pH value becomes 12.0 to 14.0 (nucleation process), nuclei are caused to grow by controlling aqueous solution for particle growth that includes the nuclei so that the pH value is less than in the nucleation process and is 10.5 to 12.0 (particle growth process). When doing this, the reaction atmosphere in the nucleation process and at the beginning of the particle growth process is a non-oxidizing atmosphere, and in the particle growth process, atmosphere control by which the reaction atmosphere is switched from this non-oxidizing atmosphere to an oxidizing atmosphere, and is then switched again to a non-oxidizing atmosphere is performed at least one time. Cathode active material is obtained with the composite hydroxide particles that are obtained by this kind of crystallization reaction as a precursor. 1. A production method for producing transition metal composite hydroxide particles by a crystallization reaction to be a precursor for a cathode active material for a non-aqueous electrolyte rechargeable battery , comprising:a nucleation process for performing nucleation by controlling an aqueous solution for nucleation that includes a metal compound that includes at least a transition metal and an ammonium ion donor so that the pH value at a standard liquid temperature of 25° C. becomes 12.0 to 14.0; anda particle growth process for causing nuclei to grow by controlling an aqueous solution for particle growth that includes the nuclei that were obtained in the nucleation process so that the pH value is less than in the ...

CRYSTALLIZER OR REACTOR AND METHOD FOR CONTINUOUSLY GROWING CRYSTALS OR CONTINUOUSLY MANAGING A REACTION

The invention relates to a processing device in the form of a crystallizer or reactor comprising a tube, at the opposite end regions of which an inlet and an outlet are provided for a crystallization or reaction medium. A helixical web is provided which runs about a longitudinal axis of the tube and which rests against the inner face of the tube casing, and the web is mounted so as to be rotatable about the aforementioned longitudinal axis of the tube. The device also has a drive for rotating the web. 1123452265. An apparatus , in particular a crystallizer () or a reactor , comprising a tube () , at the opposite end regions of which an inflow () and an outflow () are provided for a crystallization or reaction medium , wherein a web () is provided which runs helically about a longitudinal axis of the tube () and which rests against the inner face of the tube jacket , and the web is mounted to be rotatable about the aforementioned longitudinal axis of the tube () and the apparatus has a drive () for rotating the web ().25252562. An apparatus in accordance with claim 1 , wherein the web () is fixedly connected to the inner side of the tube jacket; and/or the tube () is supported such that it can be rotated together with the web () about said longitudinal axis claim 1 , with the rotatable support of the tube () representing the rotatable support of the web () and with the drive () serving the rotation of the tube ().35292. An apparatus in accordance with claim 1 , wherein the web () and the tube () represent separate components; and/or the tube () is supported in a stationary and non-rotatable manner.4278. An apparatus in accordance with claim 1 , wherein the end of the tube () at the outflow side is closed claim 1 , preferably by a cover (); and/or the tube jacket has at least one aperture claim 1 , and preferably a plurality of apertures () claim 1 , distributed over the periphery in the end region at the outflow side.529. An apparatus in accordance with claim 1 , ...

METHOD OF MAKING QUANTUM DOTS

Quantum dots and methods of making quantum dots are provided. 1. A method for making quantum dots comprising:combining one or more highly reactive chalcogenide precursors, one or more highly reactive metal precursors, and a seed stabilizing agent at a reaction temperature to form a reaction mixture where the ratio of metal to chalcogenide is in a range from about 1:1 to about 1:0.5, andquenching the reaction mixture resulting in quantum dots.25-. (canceled)6. A method in accordance with wherein a metal precursor comprises a metal carboxylate.7. A method in accordance with wherein a metal precursor comprises cadmium oleate (Cd(Oleate)).8. A method in accordance with wherein the seed stabilizing agent comprises a phosphonic acid.9. A method in accordance with wherein the seed stabilizing agent is octadecylphosphonic acid.10. A method in accordance with wherein the reaction temperature is sufficient to form the quantum dots.11. A method in accordance with wherein quenching comprises dropping the temperature to a temperature sufficiently low to prevent nucleation and Ostwald ripening.12. A method in accordance with wherein quenching comprises dropping the temperature to a temperature sufficiently low to prevent nucleation and Ostwald ripening claim 1 , but is sufficiently high for a subsequent growth of the quantum dot.13. A method in accordance with wherein the quantum dots comprise CdSe and the reaction temperature is about 270° C.14. A method in accordance with wherein the step of quenching the reaction mixture is accomplished by rapid addition of a non-coordinating solvent to the reaction mixture sufficient to lower the reaction mixture temperature to a quenching temperature.15. A method in accordance with wherein the non-coordinating solvent is 1-octadecene.16. A method in accordance with wherein the quenching temperature is in a range from about 200 to about 240° C.17. (canceled)18. A method in accordance with wherein a highly reactive chalcogenide precursor ...

Method for Producing Single Crystal of Polymer-Metal Complex

The present invention provides a method for producing a single crystal of a polymer-metal complex comprising: 2. The method for producing a single crystal of a polymer-metal complex according to claim 1 , wherein the additive for changing solution properties to basic is a base selected from a hydroxide of an alkali metal claim 1 , a hydroxide of an alkaline earth metal claim 1 , an organic base claim 1 , and an organometallic compound.3. The method for producing a single crystal of a polymer-metal complex according to claim 1 , wherein the additive for changing solution properties to basic is lithium hydroxide claim 1 , sodium hydroxide claim 1 , potassium hydroxide claim 1 , rubidium hydroxide claim 1 , strontium hydroxide claim 1 , 1 claim 1 ,8-diazabicyclo[5.4.0]undec-7-ene claim 1 , sodium bis(trimethylsilyl)amide claim 1 , 1 claim 1 ,1 claim 1 ,3 claim 1 ,3-tetramethylguanidine claim 1 , or N claim 1 ,N-diisopropylethylamine.4. The method for producing a single crystal of a polymer-metal complex according to claim 1 , wherein the metal ion that serves as a center metal is a cobalt ion or a zinc ion.5. The method for producing a single crystal of a polymer-metal complex according to claim 1 , wherein the polymer-metal complex is represented by formula:{'br': None, 'sub': 2', '3', '2', 'n, '[(M(Z))(L)]'}(wherein,M represents a metal ion,Z represents a monovalent anion,n represents an arbitrary natural number, andL is a compound represented by formula (1)).6. A method for preparing a crystal structure analysis sample in which a molecule of an organic compound for which a molecular structure is to be determined is arranged in pores and voids of a polymer-metal complex crystal in an ordered manner claim 1 , the method comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, '(c) a step of bringing a single crystal of a polymer-metal complex crystal obtained by the production method according to into contact with a first organic solvent; and'}(d) a step of ...

Crystal form of (6s)-5-methyltetrahydrofolate salt and method for preparing same

Disclosed are a crystal form of (6S)-5-methyltetrahydrofolate salt and a method for preparing the same. The crystal form is: Form C of the crystal form of (6S)-5-methyltetrahydrofolate calcium salt, where the X-ray diffraction pattern has diffraction peaks at the 2θ angles of 6.3±0.2 and 19.2±0.2; or the crystal form of (6S)-5-methyltetrahydrofolate strontium salt, where the X-ray diffraction pattern has diffraction peaks at the 2θ angles of 6.5±0.2 and 22.0±0.2. The crystal form of (6S)-5-methyltetrahydrofolate salt of the present invention has the advantages of excellent physicochemical properties, good stability, high purity, good reproducibility, and being more suitable for production on an industrial scale.

Methods of rapid preparation of silver nanowires with high aspect ratio

Disclosed is a method suitable for efficiently producing silver nanowires with high aspect ratio. In this method, silver nanowires with aspect ratio of more than 300 and purity of more than 80% are produced through an acid compound mediated microwave-assisted wet chemistry method. Such silver nanowires are especially suitable for the application in the flexible transparent electrodes, as they can simultaneously improve the electrical conductivity and transparency.

Truncated Ditetragonal Gold Prisms

Truncated ditetragonal gold prisms (Au TDPs) are synthesized by adding a dilute solution of gold seeds to a growth solution, and allowing the growth to proceed to completion. The Au TDPs exhibit the face-centered cubic crystal structure and are bounded by 12 high-index {310} facets. The Au TDPs may be used as heterogeneous catalysts as prepared, or may be used as substrates for subsequent deposition of an atomically thin layer of a platinum group metal catalyst. When the Au TDPs are used as substrates, the atomically thin layer of metal reproduces the high-index facets of the Au TDPs. 1. A crystalline nanomaterial , comprising:a truncated ditetragonal gold prism.2. The crystalline nanomaterial of claim 1 , wherein the truncated ditetragonal gold prism has a face-centered cubic crystal structure bounded by 12 high-index {310} facets.3. The crystalline nanomaterial of claim 1 , wherein the truncated ditetragonal gold prism comprises 8 side facets parallel to a principal axis claim 1 , two terminating facets located at the top of the truncated ditetragonal gold prism claim 1 , and two terminating facets located at the bottom of the truncated ditetragonal gold prism.4. The crystalline nanomaterial of claim 2 , wherein the {310} facets are a vector sum of one {110} facet and two {100} facets.5. The crystalline nanomaterial of claim 1 , further comprising an atomically thin coating of catalytically active metal.6. The crystalline nanomaterial of claim 5 , wherein the atomically thin coating of catalytically active metal at least partially encapsulates the truncated ditetragonal gold prism.7. The crystalline nanomaterial of claim 5 , wherein the catalytically active metal is platinum.8. The crystalline nanomaterial of claim 7 , wherein the atomically thin coating of platinum reproduces the surface features of the truncated ditetragonal gold prism.9. The crystalline nanomaterial of claim 8 , wherein the atomically thin coating of platinum reproduces the high-index facets of ...

METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL

A first object of the present invention is to provide a method for efficiently growing a nitride single crystal even under low pressure conditions. The present invention relates to a method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state. 1. A method for producing a nitride single crystal , comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal , a nitrogen-containing solvent , a mineralizer containing a fluorine atom , and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state.2. The method for producing a nitride single crystal according to claim 1 , wherein the pressure in the reaction vessel in the step of growing a nitride crystal is set to 10 to 200 MPa.3. The method for producing a nitride single crystal according to claim 1 , wherein in the reaction vessel claim 1 , the temperature of a region where the raw material is dissolved is lower than the temperature of a region where a nitride crystal is grown on the surface of the seed crystal.4. The method for producing a nitride single crystal according to claim 1 , wherein the mineralizer contains a halogen atom claim 1 , and the fluorine atom accounts for at least 50% by mole of the halogen atom.5. The method for producing a nitride single crystal according to claim 1 , wherein the pressure in the reaction vessel and the concentration of the fluorine atom ...

FABRICATION AND/OR APPLICATION OF ZINC OXIDE CRYSTALS WITH INTERNAL (INTRA-CRYSTALLINE) POROSITY

Briefly, an embodiment comprises fabricating and/or uses of one or more zinc oxide crystals in which one or more zinc oxide crystals have intra-crystalline porosity other than incidental intra-crystalline porosity. 1. A composition of matter comprising: one or more zinc oxide crystals , wherein the one or more zinc oxide crystals have intra-crystalline porosity other than incidental intra-crystalline porosity.2. The composition of matter of claim 1 , wherein the one or more zinc oxide crystals form at least part of at least one of the following: an epitaxial film; a single crystal film; a single crystal particle; a bulk single crystal claim 1 , or an array or a pattern of micro- or smaller dimensioned single crystal structures.3. The composition of matter of claim 1 , wherein the one or more zinc oxide crystals form at least part of least one of the following: a polycrystalline film; a polycrystalline particle; a bulk polycrystalline body claim 1 , or an array or pattern of micro- or smaller dimensioned polycrystalline structures.4. The composition of matter of claim 1 , wherein the intra-crystalline porosity other than incidental intra-crystalline porosity comprises a sufficient amount so as to at least alter one or more aspects of reflection claim 1 , transmission and/or absorption of light incident to the one or more zinc oxide crystals.5. The composition of matter of claim 1 , wherein the intra-crystalline porosity other than incidental intra-crystalline porosity comprises a sufficient amount of intra-crystalline porosity so as to at least alter thermal conductivity and/or electrical conductivity of the one or more zinc oxide crystals claim 1 , wherein any relative change in respective conductivities is not commensurate.6. The composition of matter of claim 1 , wherein the intra-crystalline porosity other than incidental intra-crystalline porosity comprises a sufficient amount of intra-crystalline porosity so as to at least alter the optical properties of the ...

Compositions, optical component, system including an optical component, devices, and other products

The present inventions relate to optical components which include quantum confined semiconductor nanoparticles, wherein at least a portion of the nanoparticles include a ligand attached to a surface thereof, the ligand being represented by the formula X-Sp-Z, wherein: X represents: a primary amine group, a secondary amine group, a urea, a thiourea, an imidizole group, an amide group, a carboxylic acid or carboxylate group, a phosphonic or arsonic acid group, a phosphoric acid group, a phosphate group, a phosphite group, a phosphinic acid group, a phosphinate group, a phosphine oxide group, a phosphinite group, a phosphine group, an arsenic acid group, an arsenate group, an arsenous acid group, an arsenite group, an arsinic acid group, an arsine oxide group, or an arsine group; Sp represents a group capable of allowing a transfer of charge or an insulating group; and Z represents a multifunctional group including three or more functional groups capable of communicating a specific property or chemical reactivity to the nanoparticle, wherein at least three of the functional groups are chemically distinct, and wherein Z is not reactive upon exposure to light. As used herein, the term “optical components” includes, but is not limited to, optical components, systems including optical components, lamps including optical components, devices including optical components, films useful in the foregoing, inks useful in making the foregoing, and compositions useful in the foregoing.

SYNTHESIS, CAPPING AND DISPERSION OF NANOCRYSTALS

Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films. 1. Nanocrystals formed by a solvothermal method , said method comprisingdissolving or mixing at least one precursor of said nanocrystals in at least one solvent to produce a solution,heating said solution to a temperature in the range of greater than a temperature of 250° C. to a temperature of 350° C. and a pressure in the range of 100-900 psi to form said nanocrystals,whereinsaid nanocrystals are comprised of at least one of hafnium oxide, zirconium oxide, hafnium-zirconium oxide and titanium-zirconium oxide.2. The nanocrystals of wherein said at least one precursor is selected from the group consisting of at least one of an alkoxide claim 1 , an acetate claim 1 , an acetylacetonate claim 1 , and a halide.3. The nanocrystals of wherein said pressure is in the range of 100-500 psi.4. The nanocrystals of wherein said temperature is in the range of 300-350° C.5. The nanocrystals of wherein said heating comprises heating for 1-2 hours.6. The nanocrystals of wherein said nanocrystals are capped with at least one agent to increase the solubility or dispersibility of said nanocrystals.7. The nanocrystals of wherein said at least one agent comprises at least one organosilane claim 6 , organocarboxylic acid or organoalcohol.8. The nanocrystals of wherein said at least one agent to cap said nanocrystals is included in the solution.9. The nanocrystals of wherein said at least one agent to cap said nanocrystals is contacted with said solution prior claim 8 , during or ...

Multiplexed spectral lifetime detection of phosphors

New methods and assays for multiplexed detection of analytes using phosphors that are uniform in morphology, size, and composition based on their unique optical lifetime signatures are described herein. The described assays and methods can be used for imaging or detection of multiple unique chemical or biological markers simultaneously in a single assay readout.

Systems and methods for binary single-crystal growth

Systems and methods for growth of multi-component single crystals are described. A first solution is flowed over a surface of a seed crystal coupled to a nozzle such that a plurality of first ions solvated in the first solution and a plurality of second ions in a second solution combine on the surface of the seed crystal to grow the single-crystal thereon. The first solution and the second solution are immiscible. A feed tank is fluidly coupled to the at least one nozzle and includes the first solution. In some aspects, the nozzle is configured to flow both the first solution and the second solution over the seed crystal.

METHOD FOR CONTROLLING CHARGE-TRANSFER CO-CRYSTALS GROWTH

Methods of preparing hollow charge transfer co-crystals with reproducible habits and morphology are disclosed. The disclosed methods utilize surfactant to guide the crystal growth in aqueous solutions. The size and shape of the co-crystal can be controlled by the surfactant used, the concentration of the surfactant, and electron donor and electron acceptor, incubation temperature, and mixing condition. 1: A hollow hexagonal-rod shaped charge transfer co-crystal , comprising:a π-electron donor and π-electron acceptor,wherein single crystals of the hollow hexagonal-rod shaped charge transfer co-crystal have one or more sealed cavities.2: The crystal of claim 1 , wherein the electron π-donor is an optionally substituted naphthalene claim 1 , anthracene claim 1 , phenanthene claim 1 , pyrene claim 1 , or chrysene.3: The crystal of claim 2 , wherein the optionally substituted anthracene is selected from the group consisting of anthracene claim 2 , 9-methylanthracene (9-MA) claim 2 , 9-methoxyanthracene (MXA) claim 2 , tert-butyl anthracene-9-carboxylate (9TBAE) claim 2 , and 9 claim 2 ,10-dimethylanthracene.4: The crystal of claim 2 , wherein π-electron acceptor is 1 claim 2 ,2 claim 2 ,4 claim 2 ,5-tetracyanobenzene (TCNB) or 2 claim 2 ,3 claim 2 ,5 claim 2 ,6-tetrafluoroterephthalonitrile (TFPN).5: The crystal of claim 1 , wherein the π-electron donor is 9-MA and the π-electron acceptor is TCNB.6: A method of preparing a hollow charge transfer crystal having one or more sealed cavities claim 1 , comprising:mixing a solution of a π-electron donor and a solution of a π-electron acceptor with a non-ionic surfactant to form a mixture at a temperature in the range of 20-50° C., andincubating the mixture at the temperature for a time effective for forming the hollow charge transfer crystal.7: The method of claim 6 , wherein the non-ionic surfactant is a poloxymer.8: The method of claim 7 , wherein the poloxymer is poloxymer 407.9: The method of claim 6 , wherein the electron ...

Methods for preparing trimanganese tetroxide with low bet specific surface area, methods for controlling particle size of trimanganese tetroxide and trimanganese tetroxide product

The present invention provides methods for preparing trimanganese tetroxide with low BET specific surface area and methods for controlling particle size of trimanganese tetroxide and trimanganese tetroxide product.

METHOD AND SYSTEM FOR PRODUCING CRYSTALLINE CALCIUM CARBONATE BY THE COMBINED USE OF TWO GASES WITH DIFFERENT CO2 CONTENT

The invention relates to a particularly energy efficient, two-step method and to a system for the continuous or semi-continuous production of crystalline calcium carbonate (precipitated calcium carbonate, PCC) by reacting calcium hydroxide with CO, the calcium hydroxide being lime milk. In the first step of the germination, the CO-source is exclusively flue gas having a CO-content of between 4-25% . In the second step, the complete conversion of the lime milk reacted in the first step to a maximum of 90%, preferably between 10-90%, is carried out exclusively using a rich gas which comprises 30-99% CO, preferably using biogas. 1. A method for producing crystalline calcium carbonate by reacting calcium hydroxide with CO , the calcium hydroxide being provided as milk of lime and the method comprising a first step of nucleation of the calcium carbonate nuclei and a subsequent crystal growth step that is separate from the nucleation , characterized in that{'sub': '2', 'sup': 3', '3, 'a) in the first step the nucleation is carried out continuously with exclusive use of flue gas that comprises 11 to 17% of COin one or more reactors, the fill levels of which are optionally variable, the parameters of the gas-introduction device which introduces flue gas into the reactors being set in dependence on the fill level in the respective reactor in such a manner that 0.3 to 5 mof gas/min/mof reactor volume are introduced in order to react a maximum of 90% of the milk of lime to calcium carbonate in the first step,'}{'sub': '2', 'b) in the second step, crystal growth and crystal stabilization are carried out batchwise with exclusive use of a rich gas that comprises 30 to 99% of COin one or more reactors, the fill levels of which are optionally variable, complete conversion of the partially reacted milk of lime from step a) being controlled by setting independently of one another the parameters of the gas-introduction device that introduces the rich gas into the reactors in ...

Mesoporous Single Crystal Semiconductors

The invention provides a process for producing a mesoporous single crystal of a semiconductor, wherein the shortest external dimension of said single crystal, measured along any of the crystallographic principal axes of said single crystal, is x, wherein x is equal to or greater than 50 nm, which process comprises growing a single crystal of a semiconductor within a mesoporous template material until said shortest external dimension of the single crystal is equal to or greater than x. Further provided is a mesoporous single crystal obtainable by the process of the invention. The invention also provides a mesoporous single crystal of a semiconductor, wherein the shortest external dimension of said single crystal measured along any of the principal axes of said single crystal is equal to or greater than 50 nm. Further provided is a composition comprising a plurality of mesoporous single crystals of the invention. The invention also provides a semiconducting layer of a mesoporous single crystal of the invention. Further provided is a semiconducting device comprising one or more mesoporous single crystals of the invention. The device may for instance be a photovoltaic device, a photodiode, a solar cell, a photo detector, a light-sensitive transistor, a phototransistor, a solid-state triode, a battery electrode, a light-emitting device or a light-emitting diode. The invention also provides the use of a mesoporous single crystal of the invention as a semiconducting material in a semiconducting device. 2. A process according to wherein the volume of said single crystal is y claim 1 , wherein y is equal to or greater than 1.25×10nm claim 1 , and wherein the process comprises growing said single crystal within the mesoporous template material until the volume of said single crystal is y.3. A process according to or wherein the mesoporous template material comprises a mesoporous inorganic material or a mesoporous carbon-based material.4. A process according to any one of to ...

METHOD OF MANUFACTURING OXIDE CRYSTAL THIN FILM

There is provided a thin film manufacturing method which allows both a reduction in the carbon impurity concentration and a high film forming speed, as well as allows separate formation of stable crystal structures. There is provided a method for manufacturing an oxide crystal thin film. The method includes carrying raw material fine particles to a film forming chamber by means of a carrier gas, the raw material fine particles being formed from a raw material solution including water and at least one of a gallium compound and an indium compound, and forming an oxide crystal thin film on a sample on which films are to be formed, the sample being placed in the film forming chamber. At least one of the gallium compound and the indium compound is bromide or iodide. 1. A method of manufacturing an oxide crystal film comprising:preparing a raw material solution comprising water and at least one compound that is selected from among gallium bromide and indium bromide;forming raw material particles from the raw material solution comprising water and the at least one compound;supplying a carrier gas to the raw material particles;carrying the raw material particles to a surface of a sample by the carrier gas; andforming the oxide crystal film that is a corundum-structured gallium oxide film or a corundum-structured indium oxide film,wherein the oxide crystal film is for a semiconductor device.2. The method of claim 1 , whereinthe raw material solution includes gallium bromide.3. The method of claim 1 , whereinthe at least one compound with a concentration that is 0.001 to 10 mol/L is included in the raw material solution.4. The method of claim 1 , whereinthe sample includes a substrate having a corundum structure.5. The method of claim 1 , whereinthe sample includes a sapphire substrate.6. The method of claim 1 , whereinthe oxide crystal film is formed at a temperature that is in a range of from 400° C. to 700° C.7. The method of claim 1 , whereinthe oxide crystal film is a ...

Methods of Making Metal Halide Perovskites

Methods of making metal halide perovskites, including methods of making micro crystals of metal halide perovskites. The metal halide perovskites, including the micro crystals, may have a 0D structure. The metal halide perovskites may be a light emitting material. 1. A method of making a metal halide perovskite , the method comprising:contacting an organic ligand halide salt with a metal halide in a liquid to form a precursor liquid; andmixing the precursor liquid with an organic liquid to form micro crystals of the metal halide perovskite, wherein the micro crystals have a 0D structure.2. The method of claim 1 , further comprising contacting an organic ligand precursor with an acid of formula HX claim 1 , wherein X is a halogen claim 1 , to form the organic ligand halide salt.3. The method of claim 2 , wherein—(i) the acid is HBr,(ii) the organic ligand precursor is N,N-dimethylethylenediamine,(iii) the organic ligand halide salt is N, N′-dimethylethane-1,2-diammonium bromide, and(iv) the metal halide is tin(II) bromide.6. The method of claim 1 , wherein the liquid comprises dimethylformamide (DMF) claim 1 , and the organic liquid comprises toluene.7. The method of claim 1 , wherein the liquid comprises dimethylformamide (DMF).8. The method of claim 1 , wherein the organic liquid comprises toluene.9. The method of claim 1 , wherein the metal halide comprises tin(II) bromide.10. The method of claim 1 , wherein the metal halide and the organic ligand halide salt are present in the precursor liquid at a molar ratio of about 1:2 to about 1:6 (metal halide:organic ligand halide salt).11. The method of claim 1 , wherein the metal halide and the organic ligand halide salt are present in the precursor liquid at a molar ratio of about 1:3 to about 1:5 (metal halide:organic ligand halide salt).12. The method of claim 1 , wherein the micro crystals are formed at a yield of at least 50%.13. The method of claim 1 , wherein a volume ratio of the precursor liquid to the organic ...

Methods for synthesis of graphene derivatives and functional materials from asphaltenes

Embodiments described are directed to methods for the functionalization of asphaltene materials and to compositions made from functionalized asphaltenes. Disclosed is a method for synthesizing graphene derivatives, such as 2D single crystalline carbon allotropes of graphene and functional materials, such as sulfonic acid and its derivatives. Also disclosed is a method for the transformation of asphaltene into a source of graphene derivatives and functional materials, such as, 0D, 1D, 2D and combinations of 0D and 1D by utilizing chemical substitution reaction mechanism, such as, electrophilic aromatic substitution, nucleophilic aromatic substitution and Sandmeyer mechanism. Also disclosed are novel graphene materials comprising: acetylenic linkage and hydrogenated graphene. These novel materials, which may be produced by these methods, include, e.g.: 2D single crystalline carbon allotropes of graphene with asymmetric unit formulas C 7 H 6 N 2 O 4 , C 6 H 4 N 2 O 4 , C 7 H 7 O 3 S− H 3 O+, C 7 H 7 O 3 SH+, and a 2D single crystal with asymmetric unit formula (Na 6 O 16 S 4 )n.

Organic-Inorganic Hybrid Perovskites, Devices, and Methods

Provided herein are organic-inorganic hybrid-perovskites, including metal halide perovskites having a 1D crystal structure. The metal halide perovskites may be luminescent. The metal halide perovskites may include a dopant, including an emitter dopant. Methods of forming metal halide perovskites, and devices including the metal halide perovskites also are provided. 1. A metal halide perovskite comprising: {'br': None, 'sub': '4', 'RMX\u2003\u2003(I);'}, 'a 1D crystal structure comprising a unit cell according to formula (I)—'}wherein M is a metal atom selected from Pb, Sn, Cu, Ge, Mn, Co, Bi, Sb, or Eu;X is a halide ion selected from Cl, Br, or I; andR is an organic cation comprising at least one secondary ammonium cation, at least one tertiary ammonium cation, or a combination thereof.3. The metal halide perovskite of claim 2 , wherein M is Pb claim 2 , X is Cl claim 2 , and the unit cell has the following formula:{'br': None, 'sub': 4', '2', '14', '4, '(CNH)PbCl.'}4. The metal halide perovskite of claim 2 , wherein M is Pb claim 2 , X is Br claim 2 , and the unit cell has the following formula:{'br': None, 'sub': 4', '2', '14', '4, '(CNH)PbBr.'}5. The metal halide perovskite of claim 2 , wherein M is Pb claim 2 , X is I claim 2 , and the unit cell has the following formula:{'br': None, 'sub': 4', '2', '14', '4, '(CNH)PbI.'}6. The metal halide perovskite of claim 1 , wherein the 1D crystal structure further comprises a dopant at a ratio of about 0.995:0.005 to about 0.90:0.1 (metal atom:dopant) claim 1 , as determined by X-ray fluorometer.7. The metal halide perovskite of claim 6 , wherein the dopant comprises Mn ions claim 6 , Eu ions claim 6 , Pr ions claim 6 , or a combination thereof.8. The metal halide perovskite of claim 6 , wherein the photoluminescence quantum efficiency (PLQE) of the metal halide perovskite is at least 25%.23. An optoelectronic device comprising the metal halide perovskite of claim 1 , wherein the metal halide perovskite is a light ...

PRODUCTION OF CRYSTALLINE CELLULOSE

A method of producing crystalline cellulose from a cellulosic material includes the step of reacting the cellulosic material in an aqueous slurry comprising a transition metal catalyst and a hypohalite solution. 1. A method of producing crystalline cellulose from a cellulosic material , comprising the steps of:(a) reacting the cellulosic material in an aqueous slurry comprising a transition metal catalyst and a hypohalite solution having an initial pH greater than about 6.0 and a final pH less than about 9.0; and(b) recovering a crystalline cellulose fraction.2. The method of wherein the hypohalite comprises hypochlorite claim 1 , hypoiodite claim 1 , or hypobromite.3. The method of or wherein the initial pH of the slurry is between about 9.0 to about 12.0.4. The method of claim 1 , or wherein the final pH of the slurry is below about 8.0.5. The method of wherein the final pH of the slurry is below about 7.0.6. The method of any one of - claim 4 , wherein the slurry has an initial oxidation-reduction potential (ORP) of greater than about 500 mV.7. The method of wherein the slurry has a final ORP of less than about 0.0 mV.8. The method of any one of - wherein the slurry further comprises a buffer.9. The method of wherein the buffer comprises a phosphate and a polyvalent organic acid.10. The method of any one of - wherein the ratio of hypohalite to cellulosic material in the slurry is between about 1 mol/kg to about 10 mol/kg (dry weight basis).11. The reaction of any one of - wherein the slurry is heated to between about 50° C. and about 85° C.12. The method of any one of - wherein the reaction of step (a) is continued or repeated until the appearance of crystalline cellulose is observed.13. The method of wherein reaction of step (a) is allowed to proceed until a significant drop of oxidation-reduction potential is observed claim 12 , the resulting cellulosic material is collected and washed in an alkaline solution claim 12 , and step (a) is repeated to produce the ...

SOLUTION-BASED SYNTHESIS OF DOPED ZNO NANOSTRUCTURES

Methods of making electrically conductive, doped zinc oxide nanowires and nanowire films are provided. The methods comprises the steps of forming an aqueous solution comprising a dopant-containing precursor salt, a zinc-containing precursor salt and a pH buffering agent and heating the aqueous solution to a temperature below its boiling point in the presence of seed crystals, whereby doped zinc oxide nanowires are grown in situ from the seed crystals in the aqueous solution. 1. A method of making conductive , doped zinc oxide nanowires , the method comprising:forming an aqueous solution comprising a chloride-containing or fluoride-containing precursor salt, a zinc-containing precursor salt and a pH buffering agent; andheating the aqueous solution to a reaction temperature below its boiling point in the presence of a substrate comprising seed crystals, wherein the aqueous solution has a pH in the range from about 5 to about 7 at the reaction temperature;whereby chloride- or fluoride-doped zinc oxide nanowires are grown in situ from the seed crystals in the aqueous solution.2. The method of claim 1 , wherein the aqueous solution has a pH in the range from about 5.3 to about 6 at the reaction temperature.3. The method of claim 1 , wherein the substrate is a non-electrically conducting substrate.4. The method of claim 1 , wherein aqueous solution further comprises an acid that claim 1 , together with the pH buffering agent claim 1 , provides the pH in the range from about 5 to about 7 at the reaction temperature.5. The method of claim 1 , wherein the dopant concentration in the doped zinc oxide nanowires is at least 0.1 atomic %.6. The method of claim 5 , wherein the dopant concentration in the doped zinc oxide nanowires is in the range from about 0.2 atomic % to about 2 atomic %.7. The method of claim 1 , comprising the chloride-containing precursor salt.8. The method of claim 7 , wherein the chloride-containing precursor salt is aluminum chloride.9. The method of ...

PROCESS FOR PRODUCING CRYSTALLINE TANTALUM OXIDE PARTICLES

The present invention is in the field of processes for the production of tantalum oxide particles. In particular the present invention relates to a process for producing crystalline tantalum oxide nanoparticles comprising heating a water-free solution containing (a) a tantalum alkoxide, (b) an acid, and (c) a solvent. 1. A process for producing crystalline tantalum oxide nanoparticles comprising heating a water-free solution containing (a) a tantalum alkoxide , (b) an acid , and (c) a solvent ,2. The process according to claim 1 , wherein the solvent is a hydrocarbon.3. The process according to claim 1 , wherein the solvent is a Cto Chydrocarbon.4. The process according to claim 1 , wherein the acid is a carboxylic acid.5. The process according to claim 4 , wherein the carboxylic acid is a Cto Ccarboxylic acid.6. The process according to claim 1 , wherein a molar ratio of the acid to the tantalum alkoxide is from 5 to 30.7. The process according to claim 1 , wherein a concentration of the tantalum alkoxide in the water-free solution is from 10 to 200 mmol/l.8. The process according to claim 1 , wherein the tantalum alkoxide is tantalum( claim 1 ,)-methoxide claim 1 , tantalum(V)-ethoxide claim 1 , or tantalum(V)-n-butoxicle.9. The process according to claim 1 , wherein a molar ratio of the acid to the tantalum alkoxide is from 2.5 to 50.10. The process according to claim 1 , wherein the water-free solution is heated to a temperature of from 120 to 400 C.11. The process according to wherein the water-free solution further contains an amine.12. The process according to claim 11 , wherein the amine is a monoalkylamine.13. A method for producing a superconductor claim 11 , comprising:using a crystalline particle comprising a tantalum oxide and having a weight average diameter of 1 to 20 nm, as a pinning center.14. The method according to claim 13 , wherein the superconductor claim 13 , contains REBaCuO claim 13 , wherein RE stands for rare earth and x is from 0.01 to 0. ...

SYNTHESIS, CAPPING AND DISPERSION OF NANOCRYSTALS

Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films. 1. A zirconia nanocrystal dispersion comprising a dispersion solvent , said dispersion having a minimum transmittance of larger than 20% when measured in a cuvette with a 10 mm path length in the wavelength region from 400 nm to 750 nm when the dispersion contains 10% by weight nanocrystals in the dispersion solvent ,said zirconia nanocrystals of the dispersion comprising at least one capping agent, and wherein the dispersion has a free capping agent concentration below 8,000 micrograms/ml as measured by GC.2. The dispersion of wherein the minimum transmittance is larger than 25% when measured in a cuvette with a 10 mm path length in the wavelength region from 400 nm to 750 nm when the dispersion contains 10% by weight nanocrystals in the dispersion solvent3. The dispersion of wherein the minimum transmittance is larger than 30% when measured in a cuvette with a 10 mm path length in the wavelength region from 400 nm to 750 nm when the dispersion contains 10% by weight nanocrystals in the dispersion solvent4. The dispersion of wherein the minimum transmittance is larger than 40% when measured in a cuvette with a 10 mm path length in the wavelength region from 400 nm to 750 nm when the dispersion contains 10% by weight nanocrystals in the dispersion solvent5. The dispersion of wherein the minimum transmittance is larger than 50% when measured in a cuvette with a 10 mm path length in the wavelength region from 400 nm to 750 nm when the dispersion contains 10% by ...

SYNTHESIS OF CORE-SHELL NANOPARTICLES AND APPLICATIONS OF SAID NANOPARTICLES FOR SURFACE ENHANCED RAMAN SCATTERING

A method of synthesizing of gold-silver core-shell nanoparticles, from a colloidal aqueous solution of gold seeds with surfactant, the gold-silver core-shell nanoparticles being produced from anisotropic gold seeds, said method comprising adding to the colloidal aqueous solution a precursor of silver and a reducing agent, to produce the deposition of silver on the gold seeds in a step called principal, characterized in that the method has an incubation step of the colloidal aqueous solution containing the gold seeds with surfactant in the DMSO, prior to the principal step. 124-. (canceled)25. A method of synthesizing gold-silver core-shell nanoparticles from a colloidal aqueous solution of gold seeds with surfactant , the gold-silver core-shell nanoparticles being produced from anisotropic gold seeds , characterized in that the method comprises successively:an incubation step of the colloidal aqueous solution containing the gold seeds with surfactant, in a mixture of water solvents and DMSO, for a first given period of time, in order to modify the organization of the surfactant and the assembly of the gold seeds;a step adding a surfactant to the previous resultant mixture;a heating step for the resultant mixture, for a second given period of time;a step adding to the resultant mixture a precursor of silver and a reducing agent, to produce the deposition of silver onto the gold seeds in a step called principal during a third period of time;an extraction step of the nanoparticles.26. The method as claimed in claim 25 , characterized in that the ratio between the volume of DMSO and the total volume of water is less than 2 and greater than 0.1 claim 25 , the total volume of water being the volume contributed by the colloidal aqueous solution of gold seeds with surfactant and by the water present in the mixture of solvents water+DMSO for incubation.27. The method as claimed in claim 25 , characterized in that the ratio between the volume of DMSO and the total volume of ...

OPTIMIZED GROWTH OF STABLE HYBRID PEROVSKITE MATERIALS FOR ELECTROMAGNETIC AND PARTICLE RADIATION DETECTION

Inverse temperature crystallization processes are provided to produce perovskite single crystals (PSCs), as well as surface passivation techniques for producing stabilizing the PSCs in the bulk region. Stable hybrid perovskite material include a bulk region comprising a single crystal perovskite material having a first bandgap and a smooth perovskite surface layer having a second bandgap greater than the first bandgap. Devices for detection and energy conversion are also contemplated, including for spectroscopic photon and elementary particle detection, such as radiation detectors. Crystallization chambers for forming the PSCs are also provided. 1. A stable hybrid perovskite material structure comprising:{'sub': '3', 'a bulk region comprising a single crystal perovskite material having a composition represented by formula ABX, wherein A is at least one organic or metallic cation having a +1 or +2 charge, B is at least one inorganic cation having a +2 or +4 charge, and X is at least one anion having a −1 or −2 charge, wherein the single crystal perovskite material has a first bandgap; and'}a smooth perovskite surface layer having a second bandgap that is greater than the first bandgap and having a smooth surface with a surface roughness of less than or equal to about 20% of an overall thickness of the perovskite surface layer.2. The stable hybrid perovskite material structure of claim 1 , wherein a first thickness of the bulk region is greater than or equal to about 1 mm and has a root mean squared (RMS) surface roughness of less than or equal to about 5 micrometers and a thickness of the smooth perovskite surface layer is greater than or equal to about 1 micrometer and the smooth surface has a root mean squared (RMS) surface roughness that is less than or equal to about 100 nm.3. The stable hybrid perovskite material structure of claim 1 , wherein a thickness of the smooth perovskite surface layer is greater than or equal to about 0.5 micrometers and less than or ...

CRYSTAL, METHOD OF PRODUCING CRYSTAL, AND METHOD OF SELF-ORGANIZING SILANOL COMPOUND

The present invention provides a crystal comprising a plurality of silanol compounds of at least one selected from the group consisting of a hexamer represented by following formula (1), an octamer represented by following formula (2), and a decamer represented by following formula (3) and having an interaction via a hydrogen bond by at least one hydroxy group between the silanol compounds. 2. The crystal according to claim 1 , wherein the crystal has a one-dimensional structure in which the silanol compounds are linearly aligned by the interaction via the hydrogen bond.3. The crystal according to claim 1 , wherein the crystal has a two-dimensional structure in which the silanol compounds are planarly aligned by the interaction via the hydrogen bond.4. The crystal according to claim 1 , wherein the crystal has a three-dimensional structure in which the silanol compounds are sterically aligned by the interaction via the hydrogen bond.5. The crystal according to claim 1 , wherein the crystal comprises at least one substance selected from the group consisting of an organic compound claim 1 , a transition metal complex claim 1 , an inorganic substance claim 1 , and an elemental substance.6. A method of producing the crystal according to claim 1 , the method comprising:a step of preparing a solution containing the silanol compounds; anda step of carrying out recrystallization by a vapor diffusion process applied to the solution and optionally by further adding at least one substance selected from the group consisting of an organic compound, a transition metal complex, an inorganic substance, and an elemental substance to the solution.7. A method of producing the crystal according to claim 1 , the method comprising:a step of preparing a solution containing the silanol compounds; anda step of carrying out recrystallization by concentrating the solution under reduced pressure and optionally by further adding at least one substance selected from the group consisting of an ...

METHODS OF PREPARATION OF ORGANOMETALLIC HALIDE STRUCTURES

Methods of growing organometallic halide structures such as AMX3 single crystal organometallic halide perovskites, using the inverse temperature solubility. 1. A method of making an AMX3 structure , comprising:dissolving MX2 and AX in a solvent to form dissolved AMX3 in a container, wherein A is an organic cation, M is a divalent cation selected from the group consisting of: Pb, Sn, Cu, Ni, Co, Fe, Mn, Pd, Cd, Ge, Cs, or Eu, and X is selected from a halide; andheating the mixture in the solvent to a temperature to form the AMX3 structure, wherein the temperature corresponds to the inverse temperature solubility for dissolved AMX3.2. The method of wherein A is selected from alkyl-ammonium claim 1 , formamidinum (FA) claim 1 , 5-ammoniumvaleric acid claim 1 , or Cesium (Cs).3. The method of claim 1 , wherein the AMXstructure is selected from the group consisting of: MAPbI claim 1 , MAPbBr claim 1 , FAPbBr claim 1 , FAPbI claim 1 , MAPbCl claim 1 , FAPbCl claim 1 , CsPbI claim 1 , CsPbCl claim 1 , CsPbBr claim 1 , FASnI claim 1 , FASnBr claim 1 , FASnCl claim 1 , MASnI claim 1 , MASnBr claim 1 , and MASnCl claim 1 , wherein MA is methylammonium and FA is formamidinum4. The method of claim 1 , wherein the solvent is selected from the group consisting of: N claim 1 ,N-dimethylformamide (DMF) claim 1 , dimethylsulfoxide (DMSO) claim 1 , gamma-butyrolactone (GBL) claim 1 , dichlorobenzene (DCB) claim 1 , toluene claim 1 , and a combination thereof.5. The method of claim 1 , wherein the AMX3 structure is a single crystal.6. The method of claim 1 , wherein when the AMX3 structure is a MAPbBr3 perovskite structure and the solvent is N claim 1 ,N-dimethylformamide (DMF).7. The method of claim 1 , wherein when the AMX3 structure is MAPbI3 perovskite structure and the solvent is γ-butyrolactone (GBL).8. The method of claim 1 , further comprising: controlling the size of the AMX3 structure by adjusting one or more of the following: bottom surface dimensions of the container claim ...

MOLECULAR BOTTOM-UP METHODS FOR FABRICATING PEROVSKITE SOLAR CELLS, PEROVSKITE MATERIALS FABRICATED THEREOF, AND OPTOELECTRONIC DEVICES INCLUDING SAME

Disclosed is a building blocks method for low-cost fabrication of single crystal organometallic perovskite materials with pseudo crystallized hole transporting material layer. This method uses self-assembled molecular monolayers SAM as building blocks. This approach enables creation of defect-free perovskite crystals with desired morphology and crystallinity in a controlled way. Additionally, the crosslinked molecular layers SAM play a role of hole transporting materials HTM and encapsulation against diffusion of metal atoms and gas molecules, thus enhancing the stability of the perovskite materials. This method is cost effective and can be scaled up. 1. A method for fabricating a perovskite device , the method comprising:providing a metal substrate;forming a self-assembled molecular monolayer on top of the metal substrate; andforming the perovskite material on top of the self-assembled molecular monolayer.2. The method of claim 1 , wherein forming the self-assembled molecular monolayer comprises immersing the metal substrate in a first solution comprising self-assembly molecules.3. The method of claim 2 , wherein the self-assembly molecules are terminated with one or both of sulfur and ammonia.4. The method of claim 2 , wherein the first solution comprises n-hexane or ethanol with one or both of thiol- and amine-end groups.5. The method of comprising exposing the metal substrate to electron or UV radiation to crosslink the self-assembly molecules.6. The method of claim 2 , wherein forming the perovskite material comprises immersing the metal substrate with the self-assembled molecular monolayer in a second solution comprising a first metal halide to form a single metal-halide layer as a perovskite active layer on top of the self-assembled molecular monolayer claim 2 , the first metal halide comprising a metal selected from the group consisting of lead (Pb) claim 2 , tin (Sn) claim 2 , bismuth (Bi) claim 2 , antimony (Sb) claim 2 , germanium (Ge) claim 2 , and ...

FE2O3 CRYSTALLINE NANOPARTICLES, COMPOSITIONS THEREOF AND PHOTOCATALYST

A method for producing crystalline α-Fe2O3 nanoparticles involving ultrasonic treatment of a solution of an iron (III)-containing precursor and an extract from the seeds of a plant in the family Linaceae. The method involves preparing an aqueous extract from the seeds of a plant in the family Linacae and dropwise addition of the extract to the solution of an iron (III)-containing precursor. The method yields crystalline nanoparticles of α-FeOhaving a spherical morphology with a diameter of 100 nm to 300 nm, a mean surface area of 240 to 250 m/g, and a type-II nitrogen adsorption-desorption BET isotherm with a H3 hysteresis loop. A method for the photocatalytic decomposition of organic pollutants using the nanoparticles is disclosed. An antibacterial composition containing the crystalline α-FeOnanoparticles is also disclosed. 114-. (canceled)15. Crystalline nanoparticles of α-FeOhaving a spherical shape with a diameter from 50 to 500 nm , wherein the crystalline nanoparticles of α-FeOhave:an average sphericity of greater than 0.94 or a cross-section or projection with an average circularity of greater than 0.94;a band gap of 2.10 to 2.16 eV;{'sup': '2', 'a surface area of 200 to 300 m/g;'}a Type II BET nitrogen adsorption-desorption curve with a H3 hysteresis loop; anda mean pore size of 7.25 to 9.25 nm.16. The crystalline nanoparticles of claim 15 , wherein the nanoparticles are monodisperse claim 15 , having a coefficient of variation defined as the ratio of a standard deviation of diameters to an average diameter of less than 15%.17. A method for the photodegradation of an organic pollutant comprising:{'sub': 2', '3, 'claim-ref': {'@idref': 'CLM-00015', 'claim 15'}, 'contacting the crystalline nanoparticles of α-FeOof and at least one organic pollutant selected from the group consisting of a dye, a phenol, a polycyclic aromatic hydrocarbon, an herbicide, and a pesticide, in a solvent to form a solution; and'}irradiating the solution with a visible light source to ...

NICKEL COBALT COMPLEX HYDROXIDE PARTICLES AND METHOD FOR PRODUCING THE SAME, POSITIVE ELECTRODE ACTIVE MATERIAL FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY AND METHOD FOR PRODUCING THE SAME, AND NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY

A method for producing a nickel cobalt complex hydroxide includes first crystallization of supplying a solution containing Ni, Co and Mn, a complex ion forming agent and a basic solution separately and simultaneously to one reaction vessel to obtain nickel cobalt complex hydroxide particles, and a second crystallization of, after the first crystallization, further supplying a solution containing nickel, cobalt, and manganese, a solution of a complex ion forming agent, a basic solution, and a solution containing said element M separately and simultaneously to the reaction vessel to crystallize a complex hydroxide particles containing nickel, cobalt, manganese and said element M on the nickel cobalt complex hydroxide particles crystallizing a complex hydroxide particles comprising Ni, Co, Mn and the element M on the nickel cobalt complex hydroxide particles. 1. A positive electrode active material for non-aqueous electrolyte secondary battery comprising a lithium transition metal complex oxide represented by a formula: LiaNi1−x−yCoxMnyMzO2 , wherein 0.95≤a≤1.2 , 0.10≤x≤0.35 , 0≤y≤0.35 , 0 Подробнее

Solution-Phase Synthesis of Layered Transition Metal Dichalcogenide Nanoparticles

A method of synthesizing two-dimensional (2D) nanoparticles of transition metal dichalcogenide (TMDC) material utilises a molecular cluster compound. The method allows a high degree of control over the shape, size and composition of the 2D TMDC nanoparticles, and may be used to produce material with uniform properties in large quantities. 1. A two-dimensional nanoflake comprising:a molecular cluster compound; anda core semiconductor material disposed on the molecular cluster compound.2. The two-dimensional nanoflake of claim 1 , wherein the core semiconductor material comprises an element of the transition metals and an element of Group 16 of the periodic table.3. The two-dimensional nanoflake of claim 2 , wherein the element of the transition metals is selected from the group consisting of Mo and W.4. The two-dimensional nanoflake of claim 2 , wherein the element of Group 16 comprises O claim 2 , S claim 2 , Se or Te.5. The two-dimensional nanoflake of claim 1 , wherein the two-dimensional nanoflake is a two-dimensional quantum dot.6. The two-dimensional nanoflake of claim 1 , wherein the two-dimensional nanoflake is a single-layered quantum dot.7. The two-dimensional nanoflake of further comprising a shell of a second semiconductor material disposed on the core semiconductor material.8. The two-dimensional nanoflake of claim 1 , wherein the core semiconductor material comprises one or more elements not in the molecular cluster compound.9. The two-dimensional nanoflake of claim 1 , wherein the molecular cluster compound is [RNR′][ME(SPh)] where M=Cd or Zn; E and E′ are independently selected from S and Se; and R and R′ are independently selected from the group consisting of H claim 1 , Me and Et.10. The two-dimensional nanoflake of claim 1 , wherein the two-dimensional nanoflake further comprises an outermost layer comprising a ligand.11. The two-dimensional nanoflake of claim 10 , wherein the ligand comprises an alkyl chalcogenide.12. The two-dimensional nanoflake ...

SOLID FORMS OF TTK INHIBITOR

The present invention relates to a novel co-crystal of the compound of formula (I): 112-. (canceled)14. The hydrobromide salt of claim 13 , wherein the salt is in unsolvated form.15. The hydrobromide salt of claim 13 , wherein the hydrobromide salt is crystalline.1620-. (canceled)21. A pharmaceutical composition comprising the hydrobromide salt of claim 13 , and a pharmaceutically acceptable carrier or diluent.2225-. (canceled)26. A method of treating a subject with cancer claim 13 , comprising administering to the subject an effective amount of a hydrobromide salt of .27. The method of claim 26 , wherein the cancer is pancreatic cancer claim 26 , prostate cancer claim 26 , lung cancer claim 26 , melanoma claim 26 , breast cancer claim 26 , colon cancer claim 26 , or ovarian cancer.28. The method of claim 27 , wherein the cancer is lung cancer claim 27 , breast cancer and colon cancer.29. The method of claim 28 , wherein the cancer is breast cancer.30. The method of claim 26 , wherein the cancer is pancreatic cancer claim 26 , prostate cancer claim 26 , lung cancer claim 26 , melanoma claim 26 , breast cancer claim 26 , colon cancer claim 26 , ovarian cancer claim 26 , hepatocellular carcinoma claim 26 , mesothelioma claim 26 , leukemia claim 26 , lymphoma claim 26 , or glioblastoma multiforme. This application is a continuation application of U.S. application Ser. No. 16/806,392, filed on Mar. 2, 2021, which is a continuation of U.S. application Ser. No. 16/318,426, filed on Jan. 17, 2019, which is the U.S. national stage application filed under 35 U.S.C. § 371(c), of International Application No. PCT/CA2017/050848, filed on Jul. 13, 2017, which claims the benefit of U.S. Provisional Application No. 62/363,424, filed Jul. 18, 2016. The entire teachings of the aforementioned applications are incorporated herein by reference.Human TTK protein kinase (TTK), also known as tyrosine threonine kinase, dual specificity protein kinase TTK, Monopolar Spindle 1 (Mps1) and ...

DEVICE AND METHOD FOR PRESSURE-DRIVEN PLUG TRANSPORT AND REACTION

The present invention provides microfabricated substrates and methods of conducting reactions within these substrates. The reactions occur in plugs transported in the flow of a carrier-fluid. 115.-. (canceled)16. A system comprising:a microfluidic device comprising a substrate having a plurality of traps in fluidic communication with a channel, each trap comprises an opening along a side of the channel shaped and/or sized to accommodate a partition of a sample fluid within; anda detector to detect, monitor, or analyze each partition of sample fluid retained within a corresponding trap, the detector to detect emissions from one or more detectable markers associated with a target molecule in response to the occurrence of a polymerase-chain reaction (PCR) reaction in one or more partitions of sample fluid.17. The system of claim 16 , further comprising a plurality of partitions of sample fluid positioned within the plurality of traps in response to flow of an immiscible fluid through the channel.18. The system of claim 17 , wherein each of the plurality of partitions of sample fluid is at least partially surrounded by the immiscible fluid.19. The system of claim 18 , wherein each of the plurality of partitions of sample fluid is separated from one another and retained within a respective trap via the immiscible fluid positioned over the opening of each trap.20. The system of claim 17 , wherein the immiscible fluid is an oil.21. The system of claim 16 , wherein the target molecule is a biological molecule.22. The system of claim 21 , wherein the sample fluid comprises at least one biological molecule and one or more chemical reagents for conducting a biological reaction with the at least one biological molecule resulting in the formation of a reaction product upon undergoing the PCR reaction.23. The system of claim 22 , wherein the detector measures at least one property associated with a partition of sample fluid based on detection of emissions from the one or more ...

Method to Produce and Scale-Up Cocrystals and Salts Via Resonant Acoustic Mixing

A method to produce and manufacture cocrystals and salts is disclosed wherein crystalline solids and other components were combined in the desired proportions into a mixing chamber and mixed at high intensity to afford a cocrystalline product. No grinding media were required. The mixing system consists of a resonant acoustic vibratory system capable of supplying a large amount of energy to the mixture and is tunable to a desired resonance frequency and amplitude. The use of resonant acoustic mixing to assist cocrystallization is novel. This discovery enables the manufacture of cocrystals and salt forms, simplifying their manufacture and scale-up, and avoiding the use of grinding methods or grinding media. The present invention affords the manufacture of cocrystals and salts on kilogram to multi-ton scale and is adaptable to continuous manufacturing through the use of resonant mixing methods. 1. A process for making a cocrystal from two or more compounds by combining compounds in a suitable vessel and subjecting the vessel and mixture to resonant acoustic mixing.2. The process according to wherein at least one of the compounds is a coformer.3. The process according to wherein a resonant frequency of mixing is from about 10 Hz to about 2000 Hz and acceleration energies for mixing in the range of 2 and 200 g-forces.4. The process according to wherein a solvent or mixture of solvents is added.5. The process according to claim 2 , wherein a solvent is added in which one or more coformers is slightly soluble to mediate the solid-solid interactions between the coformers.6. The process according to wherein a solvent or mixture of solvents is added or the presence of water vapor leads to the formation of a cocrystal hydrate or cocrystal solvate.7. A process for making a crystalline salt form by combining two compounds in a suitable vessel and subjecting the vessel and mixture to resonant acoustic mixing.8. The process according to wherein a resonant frequency of mixing is ...

MULTIFUNCTIONAL NANOCELLULAR SINGLE CRYSTAL NICKEL FOR TURBINE APPLICATIONS

A nanocellular single crystal nickel based material is provided having a thermal diffusivity in the range of 0.0002 cm{circumflex over ( )}2/s to 0.02 cm{circumflex over ( )}2/s and a thermal conductivity in the range of 0.024 W/mK to 9.4 W/mK. The nanocellular single crystal nickel based material may be used to form turbine engine components. The nanocellular single crystal nickel based material may be produced by providing a first solution containing a nickel precursor and deionized water, providing a second solution containing a structure controlling polymer/surfactant and an alcohol, mixing the first and second solutions into a solution containing a reducing agent to form a third solution, and processing the third solution to create the nanocellular single crystal based material. 19-. (canceled)10. A material comprising a nanocellular single crystal nickel based material comprising pores and ligaments in the range of 0.05 to 100 microns having a thermal diffusivity in the range of 0.0002 cm{circumflex over ( )}2/s to 0.02 cm{circumflex over ( )}2/s and a thermal conductivity in the range of 0.024 W/mK to 9.4 W/mK.11. The material according to claim 10 , further having a strength in the range of 5.0 GPa to 114 GPa.12. The material according to claim 10 , further having a porosity in the range of 15% to 70%.13. The material according to claim 10 , further having a plurality of pores with each said pore having a size in the range of 50 nm to 25 microns.14. The material according to claim 13 , wherein said pores have a size in the range of 50 nm to 6.0 microns.15. A turbine engine component comprising a structure at least partially formed from a nanocellular single crystal nickel based material having a plurality of pores and ligaments in the range of 0.05 to 100 microns claim 13 , an overall cooling effectiveness in the range of from 0.4 to 1.0 and a mass flow rate in the range of from 1e-2 to 1e-7.16. The turbine engine component of claim 15 , wherein said ...

PRECIPITATION PROCESS FOR PRODUCING PEROVSKITE-BASED SOLAR CELLS

A method for the preparation of a cohesive non-porous perovskite layer on a substrate () comprising: forming a thin film of a solution containing a perovskite material dissolved in a solvent onto the substrate to form a liquid film () of the solution on the substrate, applying a crystallisation agent () to a surface of the film to precipitate perovskite crystals from the 5 solution to form the cohesive non-porous perovskite layer () on the substrate. 1. A method for the preparation of a cohesive non-porous perovskite layer on a substrate comprising:forming a thin film of a solution containing a perovskite material dissolved in a solvent onto the substrate to form a liquid film of the solution on the substrate,applying a crystallisation agent to a surface of the film to precipitate perovskite crystals from the solution to form the cohesive non-porous perovskite layer on the substrate.2. The method of claim 1 , wherein the method of forming a thin film of the solution on the substrate includes spin-coating the solution containing the perovskite material dissolved in the solvent onto the substrate to form the film of the solution on the substrate.3. The method of claim 1 , wherein the crystallisation agent is an organic liquid.4. The method of claim 3 , wherein the organic liquid is selected from the group consisting of: chlorobenzene claim 3 , 1 claim 3 ,2-dichlorobenzene claim 3 , 1 claim 3 ,4-dichlorobenzene claim 3 , 1 claim 3 ,2 claim 3 ,4-trichlorobenzene claim 3 , 1 claim 3 ,3 claim 3 ,5-trichlorobenzene claim 3 , 1 claim 3 ,2 claim 3 ,3-trichlorobenzene claim 3 , benzene claim 3 , toluene and xylene.5. The method of claim 1 , wherein the step of applying the crystallisation agent includes spin coating the crystallisation agent on to a surface of the thin film.6. The method of claim 1 , further including the step of heat treating the substrate to evaporate residual solvents present in film.7. The method of claim 1 , wherein the crystallisation agent is a dry gas ...

ECO-FRIENDLY APPROACH TO a-FE2O3 AS MULTIFUNCTIONAL GREEN MATERIAL FOR WATER TREATMENT

A method for producing crystalline α-Fe2O3 nanoparticles involving ultrasonic treatment of a solution of an iron (III)-containing precursor and an extract from the seeds of a plant in the family Linaceae. The method involves preparing an aqueous extract from the seeds of a plant in the family Linacae and dropwise addition of the extract to the solution of an iron (III)-containing precursor. The method yields crystalline nanoparticles of α-FeOhaving a spherical morphology with a diameter of 100 nm to 300 nm, a mean surface area of 240 to 250 m/g, and a type-II nitrogen adsorption-desorption BET isotherm with a H3 hysteresis loop. A method for the photocatalytic decomposition of organic pollutants using the nanoparticles is disclosed. An antibacterial composition containing the crystalline α-FeOnanoparticles is also disclosed. 1: A method for producing crystalline α-FeOnanoparticles , comprising:ultrasonically treating a nanoparticle synthesis solution comprising an iron (III)-containing precursor and a seed extract derived from a seed from a plant in the family Linaceae (LSE) to form a suspension; and{'sub': 2', '3, 'recovering the crystalline α-FeOnanoparticles from the suspension,'}{'sub': 2', '3, 'wherein the crystalline α-FeOnanoparticles have a spherical shape with a diameter from 50 to 500 nm, and an average sphericity of greater than 0.94 or a cross-section or projection with an average circularity of greater than 0.94.'}2. The method of claim 1 , wherein the seed from the plant in the family Linaceae is flax seed.3. The method of claim 1 , further comprising:forming the LSE by:boiling or steeping powdered seeds from the plant in the family Linaceae in water to produce a seed extract suspension; andfiltering or otherwise removing solid particles from the seed extract suspension to produce the LSE.4. The method of claim 3 , wherein during the boiling the water has a pH of 5.5 to 8.5.5. The method of claim 3 , wherein the LSE comprises:at least 4 of compounds ...

TRANSITION METAL COMPOSITE HYDROXIDE PARTICLES AND PRODUCTION METHOD THEREOF, CATHODE ACTIVE MATERIAL FOR NON-AQUEOUS ELECTROLYTE RECHARGEABLE BATTERY AND PRODUCTION METHOD THEREOF, AND NONAQUEOUS ELECTROLYTE RECHARGEABLE BATTERY

Provided is a cathode active material that can simultaneously improve the capacity characteristics, output characteristics, and cycling characteristics of a rechargeable battery when used as cathode material for a non-aqueous electrolyte rechargeable battery. After performing nucleation by controlling an aqueous solution for nucleation that includes a metal compound that includes at least a transition metal and an ammonium ion donor so that the pH value becomes 12.0 to 14.0 (nucleation process), nuclei are caused to grow by controlling aqueous solution for particle growth that includes the nuclei so that the pH value is less than in the nucleation process and is 10.5 to 12.0 (particle growth process). When doing this, the reaction atmosphere in the nucleation process and at the beginning of the particle growth process is a non-oxidizing atmosphere, and in the particle growth process, atmosphere control by which the reaction atmosphere is switched from this non-oxidizing atmosphere to an oxidizing atmosphere, and is then switched again to a non-oxidizing atmosphere is performed at least one time. Cathode active material is obtained with the composite hydroxide particles that are obtained by this kind of crystallization reaction as a precursor. 1. A production method for producing transition metal composite hydroxide particles by a crystallization reaction to be a precursor for a cathode active material for a non-aqueous electrolyte rechargeable battery , comprising:a nucleation process for performing nucleation by controlling an aqueous solution for nucleation that includes a metal compound that includes at least a transition metal and an ammonium ion donor so that the pH value at a standard liquid temperature of 25° C. becomes 12.0 to 14.0; anda particle growth process for causing nuclei to grow by controlling an aqueous solution for particle growth that includes the nuclei that were obtained in the nucleation process so that the pH value is less than in the ...

PREPARATION OF SOLVENT AND POLYMER REDISPERSIBLE FORMULATIONS OF DRIED CELLULOSE NANOCRYSTALS (CNC)

The disclosure provides redispersible CNC. The CNC disclosed herein is redispersible in non-polar and polar organic solvents as well as polar and non-polar polymers such as polyethylene or polypropylene. The disclosure surprisingly also provides redispersible CNC bearing improved redispersion in aqueous systems and most particularly in high ionic strength aqueous systems which usually require significant mixing energy to achieve dispersion. 1. A redispersible cellulose nanocrystal (CNC) wherein said CNC is comprising non-covalent ionic adduct of a cationic groups formed from a protonated amine compound and anionic groups formed from titrable acidic groups , wherein said titrable acidic groups are located at the surface of said CNC , wherein said titrable acid group is comprising sulfate or phosphate half-esters , carboxylic acids or mixtures thereof , and wherein said redispersible CNC is in an isolated dried form.2. The redispersible CNC as defined in claim 1 , wherein said titrable acid group is comprising sulfate half-esters (unmodified or desulfated) claim 1 , carboxylic acids or mixtures thereof.3. The redispersible CNC as defined in claim 1 , wherein said amine compound is an amine-terminated polyalkane claim 1 , an amine-terminated polyalkylether or an amine-terminated polyalkylene imine.4. The redispersible CNC as defined in claim 1 , wherein said amine compound is a monoamine-terminated polyalkane claim 1 , a monoamine-terminated polyalkylether or a monoamine-terminated polyalkylene imine.5. The redispersible CNC as defined in claim 1 , wherein said amine compound is monoamine-terminated polyalkylether having the formula:{'br': None, 'sub': 1', '2', 'x', 'a', '2', '3', 'b', '2, 'R—[O(CH)]—[OCHCH(CH)]—NH'}wherein said polyalkylether may be a homopolymer, an AB or ABA block copolymer, or an alternating copolymer;{'sub': 1', '1', '1, 'Ris H, or selected from an optionally substituted, linear or branched alkyl of 1 to 14 carbon atoms; or Ris an optionally ...

Synthesis and Surface Functionalization of Particles

Provided are methods of controlling the shape and surface chemistry of nanoparticles, particularly ferrite nanoparticles. Methods for preparing non-spherical ferrite nanoparticles, including nanocubes, nanobars, nanoplates, and nanoflowers, are described. Also provided are methods of functionalizing the surface of metal and metal oxide particles. The surface functionalization methods do not require the use of chemical linkers and/or additional reagents, and permit the facile conjugation of a range of molecules, including bioactive agents, to the surface of particles.

NICKEL COMPOSITE HYDROXIDE AND METHOD FOR PRODUCING THE SAME, POSITIVE ELECTRODE ACTIVE MATERIAL AND METHOD FOR PRODUCING THE SAME AS WELL AS NONAQUEOUS ELECTROLYTIC SECONDARY CELL

A nickel composite hydroxide represented by NiCoMnM(OH)(where 0≦x≦0.35, 0≦y≦0.35, 0≦z≦0.1, 0 Подробнее

Methods of preparation of organometallic halide structures

Embodiments of the present disclosure provide methods of growing organometallic halide structures such as single crystal organometallic halide perovskites, methods of use, devices incorporating organometallic halide structures, and the like.

METHOD OF PRODUCING ULTRAVIOLET PROTECTIVE AGENT COMPOSITION, AND ULTRAVIOLET PROTECTIVE AGENT COMPOSITION OBTAINED THEREBY

A method of producing an ultraviolet protective agent composition, which has high transparency and excellent protection ability against a light of ultraviolet region of wavelengths of 200 to 420 nm, and an ultraviolet protective agent composition obtained by the production method are provided. The method of producing an ultraviolet protective agent composition includes at least step (a) of precipitating iron oxide microparticles by mixing with a microreactor an iron oxide raw material fluid containing at least Fe ion, and an iron oxide precipitation fluid containing at least a basic substance; and step (b) of dispersing the above precipitated iron oxide microparticles in a dispersion medium to obtain iron oxide microparticle dispersion, wherein a haze value of the iron oxide microparticle dispersion is 2.0% or less, and a transmittance of the iron oxide microparticle dispersion for the light of the wavelengths of 200 to 420 nm is 2.0% or less. 1. A method of producing an ultraviolet protective agent composition , which comprises at least{'sup': '3+', 'step (a) of precipitating iron oxide microparticles by mixing with a microreactor an iron oxide raw material fluid containing at least Fe ion, and an iron oxide precipitation fluid containing at least a basic substance, and'}step (b) of dispersing the above precipitated iron oxide microparticles in a dispersion medium to obtain an iron oxide microparticle dispersion,wherein a haze value of the iron oxide microparticle dispersion is 2.0% or less, and a transmittance of the iron oxide microparticle dispersion for the light of the wavelengths of 200 to 420 nm is 2.0% or less.2. The method of producing an ultraviolet protective agent composition according to claim 1 , wherein a transmittance of the iron oxide microparticle dispersion for the light of the wavelengths of 650 to 800 nm is 80% or more.3. The method of producing an ultraviolet protective agent composition according to claim 1 , wherein a primary particle ...

Method of manufacturing composite material having nano structure grown on carbon fiber and composite material having nano structure manufactured using the same

Provided is a composite material having a nano structure grown on a carbon fiber with a high density. A method of manufacturing a composite material includes: modifying a surface of a carbon fiber by using an electron beam; growing a zinc oxide (ZnO) nano structure on the modified surface of the carbon fiber; and transferring the carbon fiber and the zinc oxide nano structure onto a polymer resin.

Method Of Forming Silicon On A Substrate

A method for forming a silicon layer using a liquid silane compound is described. The method includes the steps of: forming a first layer on a substrate, preferably a flexible substrate, the first layer having a (poly)silane; and, irradiating with light having one or more wavelength within the range between 200 and 400 nm for transforming the polysilane in silicon, preferably amorphous silicon or polysilicon. 1. A method for forming silicon , on a substrate comprising:forming one or more layers on a substrate using one or more liquid silane compounds, polysilane and/or cyclic silane compounds;exposing at least part of said one or more layers to light, laser light, or laser light pulses, comprising one or more wavelengths within the range between 100 nm and 800 nm, for directly transforming at least part of said one or more silane compounds into silicon, said silicon comprising amorphous, microcrystalline, polycrystalline and/or single crystalline silicon.2. The method according to claim 1 , further comprising:exposing at least part of said one or more layers to said light after thermally annealing said one or more layers at a low-temperature between 80 and 270° C., or, exposing said layer to said light without thermally annealing said one or more layers.3. The method according to claim 1 , wherein forming said one or more layers comprises:coating at least part of said substrate with a liquid compound comprising at least one liquid cyclic silane compound;exposing at least part of said coating to UV light for transforming at least part of said cyclic silane compound into one or more polysilane compounds.4. The method according to wherein the light that is used for transforming at least part of said one or more layers into silicon is generated by a high- or low-pressure mercury lamp claim 1 , a rare-earth gas discharge lamp or a (pulsed) laser claim 1 , YAG laser claim 1 , an argon laser or an excimer laser.5. The method according to wherein exposing at least part of ...

METHODS OF CONTROLLING NANOSTRUCTURE FORMATIONS AND SHAPES

A method of forming monodispersed metal nanowires comprising: forming a reaction mixture including a metal salt, a capping agent and an ionic additive in a reducing solvent; and reducing the metal salt to the monodispersed metal nanostructures. 1. A method of forming monodispersed metal nanostructures comprising:forming a reaction mixture comprising a metal salt, a capping agent and an ionic additive in a reducing solvent; andreducing the metal salt to the monodispersed metal nanostructures, wherein the monodispersed metal nanostructures comprise at least 85% by weight of metal nanowires.2. The method of claim 1 , wherein a molar ratio of the ionic additive and the metal salt is between about 0.005 and about 0.01.3. The method of claim 1 , wherein a solubility of the metal salt in the reducing solvent is at least 0.001 g/ml.4. The method of claim 1 , wherein the metal salt is silver nitrate claim 1 , silver acetate claim 1 , silver perchlorate claim 1 , gold perchlorate claim 1 , palladium chloride claim 1 , or platinum chloride.5. The method of claim 1 , wherein a concentration of the metal salt in the reaction mixture is of about 0.01M to 0.2M.6. The method of claim 1 , wherein the capping agent is poly(vinyl pyrrolidone) claim 1 , polyacrylamide claim 1 , polyacrylic or a copolymer thereof.7. The method of claim 1 , wherein a concentration of the capping agent in the reaction mixture is of about 0.01M to 0.2M.8. The method of claim 1 , wherein the ionic additive comprises an anion comprising chloride claim 1 , iodide claim 1 , fluoride claim 1 , phosphate claim 1 , sulfate claim 1 , hydrogen sulfate claim 1 , or sulfonate.9. The method of claim 1 , wherein the ionic additive is represented by a formula of NRCl claim 1 , wherein each R is the same or different and independently an alkyl claim 1 , alkenyl claim 1 , alkynyl claim 1 , aryl claim 1 , or aralkyl.10. The method of claim 9 , wherein the capping agent is compatible with quaternary ammonium ions (NR) in ...

METHOD FOR MANUFACTURING A MATERIAL HAVING NANOELEMENTS

The process for manufacturing a product () including nanoelements () includes: —forming (E) a mixture () including a plurality of electrically conductive grains (), a catalyst () separate from the grains () of the electrically conductive grains, and a reactant () that is liquid or in the form of a suspension of solid particles in a liquid solvent and comprises a precursor of the material intended to form the nanoelements (); —introducing the mixture () into a chamber of a reactor and pressurizing the reactor to a pressure less than or equal to 1 bar; and —obtaining (E) the product () from the mixture () comprising a step (E-) of growing the nanoelements () from the catalyst (), then combined with the grains () of the electrically conductive grains, the growth step (E-) being carried out by a step of heat treatment applied to the mixture (). 1. A process for manufacturing a product comprising nanoelements , the process comprising:forming a mixture comprising a plurality of electrically conductive grains, a catalyst separate from the grains of the plurality of electrically conductive grains, and a reactant that is liquid or in the form of a suspension of solid particles in a liquid solvent and comprises a precursor of the material intended to form the nanoelements,introducing the mixture into a chamber of a reactor and pressurizing the reactor to a pressure less than or equal to 1 bar,obtaining the product from the mixture, wherein the obtaining comprises growing the nanoelements from the catalyst, then combined with the grains of the plurality of electrically conductive grains, the growing being carried out by applying of heat treatment to the mixture.2. The process as claimed in claim 1 , wherein the application of the heat treatment to the mixture is carried out at a temperature in a range of from 270° C. to 600° C. claim 1 , under a non-oxidizing atmosphere.3. The process as claimed in claim 1 , comprising claim 1 , prior to forming the mixture claim 1 , supplying ...

APPARATUS FOR PROCESSING MATERIALS AT HIGH TEMPERATURES AND PRESSURES

An apparatus for processing materials at high temperatures comprises a high strength enclosure; a plurality of high strength radial segments disposed adjacent to and radially inward from the high strength enclosure; a liner disposed adjacent to and radially inward from the radical segments; a chamber defined interior to the liner; a heating device disposed within the chamber; and a capsule disposed within the chamber, the capsule configured to hold a supercritical fluid. The apparatus may be used for growing crystals, e.g., GaN, under high temperature and pressure conditions. 1. An apparatus comprising:a high strength enclosure;a plurality of high strength radial segments disposed adjacent to and radially inward from the high strength enclosure;a liner disposed adjacent to and radially inward from the radical segments;a chamber defined interior to the liner;a heating device disposed within the chamber; anda capsule disposed within the chamber, the capsule configured to hold reactants and materials for growing crystals under high temperature and pressure conditions; wherein there is a gap between the liner and an outer surface of the heating device.2. The apparatus of claim 1 , wherein the heating device defines an outer surface claim 1 , an inner surface claim 1 , and an interior cavity.3. The apparatus of claim 1 , wherein the capsule is disposed within the interior cavity of the heating device.4. The apparatus of claim 3 , wherein the capsule is configured such that there is a gap between an exterior surface of the capsule and the inner surface of the heating device.5. The apparatus of claim 1 , where the liner comprises a high temperature steel or a high temperature metal alloy.6. The apparatus of claim 5 , wherein the liner comprises a nickel-chromium based super alloy.7. The apparatus of claim 1 , where the liner has a thickness of about 0.1 mm to 10 mm.8. The apparatus of claim 1 , wherein the radial segments comprise a material chosen from a ceramic claim 1 , ...

METHOD OF MANUFACTURING OXIDE CRYSTAL THIN FILM

There is provided a thin film manufacturing method which allows both a reduction in the carbon impurity concentration and a high film forming speed, as well as allows separate formation of stable crystal structures. There is provided a method for manufacturing an oxide crystal thin film. The method includes carrying raw material fine particles to a film forming chamber by means of a carrier gas, the raw material fine particles being formed from a raw material solution including water and at least one of a gallium compound and an indium compound, and forming an oxide crystal thin film on a sample on which films are to be formed, the sample being placed in the film forming chamber. At least one of the gallium compound and the indium compound is bromide or iodide. 1. A method of manufacturing an oxide crystal film comprising:preparing a raw material solution comprising water and at least one compound that is selected from among gallium bromide, gallium iodide, indium bromide and indium iodide;forming raw material particles from the raw material solution comprising water and the at least one compound;carrying the raw material particles to a surface of a sample by a carrier gas; andforming an oxide crystal film comprising a corundum structure on the surface of the sample that comprises a corundum structure.2. The method of claim 1 , wherein{'sub': 2', '3, 'the oxide crystal film comprising the corundum structure comprises an α-phase InOcrystal.'}3. The method of claim 1 , wherein{'sub': 2', '3, 'the oxide crystal film comprising the corundum structure comprises an α-phase GaOcrystal.'}4. The method of claim 1 , whereinthe oxide crystal film comprising the corundum structure is a mixed crystal film.5. The method of claim 1 , whereinthe at least one compound with a concentration that is 0.005 to 2 mol/L is comprised in the raw material solution.6. The method of claim 1 , whereinthe carrier gas has a flow rate of 0.5 to 10 L/min.7. The method of claim 2 , wherein{'sub': 2', ...

METHODS FOR SYNTHESIZING METAL NANOSTRANDS, AND STRUCTURES FORMED OF THE METAL NANOSTRAND SYNTHESIZED THEREOF

Nanostructures formed of metal nanostrands, and methods of forming the nanostrands, are described. These nanostructures can be used as a flexible or non-flexible, transparent or non-transparent conductive films or electronic circuit for various different applications. An example metal nanostrand can include: a first nanoplate joined laterally to a second nanoplate. Each of the nanoplates can have a top surface, a bottom surface and one or more side surfaces laterally extending from the top surface to the bottom surface. A (111) crystallographic plane can be arranged at each of the top surface and the bottom surface. 1. A metal nanostrand comprising:a first nanoplate joined laterally to a second nanoplate, wherein each of the nanoplates comprises a top surface, a bottom surface and one or more side surfaces laterally extending from the top surface to the bottom surface, and wherein a (111) crystallographic plane is arranged at each of the top surface and the bottom surface.2. The metal nanostrand of having an axial length within a range from approximately 1 microns to approximately 2000 microns.3. The metal nanostrand of having an axial width within a range from approximately 50 nanometers to approximately 500 nanometers.4. The metal nanostrand of having a thickness within a range from approximately 10 nm to approximately 100 nm.5. The metal nanostrand of comprising two or more nanoplates.6. The metal nanostrand of any one of claim 1 , wherein one or more nanoplates has a hexagonal shape and one or more nanoplates has a triangular shape.7. A nanostrand mesh formed of two or more metal nanostrands of claim 1 , wherein the two or more metal nanostrands overlap at least an adjacent metal nanostrand.8. The nanostrand mesh of claim 7 , wherein the two or more metal nanostrands are randomly oriented with respect to each other.9. The nanostrand mesh of claim 7 , wherein the two or more metal nanostrands are aligned along a target direction.10. The nanostrand mesh of any one ...

Method of Preparing Nanostructured Single Crystal Silver

A method of preparing nanostructured single crystal silver, comprising placing a high-conductive molded porous active carbon containing chloride ions, which has been reductively treated, into a silver-containing precursor solution. After several hours at room temperature, the nanostructured single crystal silver grows on the surface of the active carbon. The silver-containing precursors and appropriate amount of chlorine provide a crystal nucleus and a slow stable crystal growth environment which are required for single crystal silver growth, and said nanostructured silver single crystals could be obtained with various morphologies by controlling the concentration of the silver-containing precursor solution and the growth time. The method of the invention is an environmentally friendly synthesis method with the nanostructured single crystal silver grows on the surface of the molded porous active carbon at room temperature, which is pollution-free and does not need any additives; the single crystal could be obtained in high yield and high purity, and can be separated from the molded porous active carbon easily, the grown silver falls off naturally and the active carbon is renewable through sonication with absolute ethanol or alkaline solutions; and the obtained single crystal silver is characterized by having high mechanical strength, good conductivity and less crystal defects. 1. A method of preparing nanostructured single crystal silver , characterized in that said method comprises the steps of:(1) reduction treatment of monolithic activated carbon:dipping the monolithic activated carbon into a 5-20 wt% of ammonia solution or absolute ethanol, and after 10 minutes to 2 hours, taking the monolithic activated carbon out and oven-drying it at 60-120 ° C., to obtain pre-treated active carbon;(2) nanostructured single crystal silver growth on the monolithic activated carbon:preparing a silver-containing precursor solution and dipping the pre-treated active carbon into ...

SOLUTION DEPOSITION METHOD FOR FORMING METAL OXIDE OR METAL HYDROXIDE LAYER

A solution deposition method including: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site. 1. A solution deposition method comprising:applying a liquid precursor solution to a substrate, the precursor solution comprising an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution;evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer comprising an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; andgrowing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.2. The method of claim 1 , wherein the bulk layer comprises an oxide of a second metal claim 1 , a hydroxide of the second metal claim 1 , or a combination thereof claim 1 , the second metal being different from the first metal.3. The method of claim 1 , wherein bulk layer comprises an oxide of the first metal claim 1 , a hydroxide of the first metal claim 1 , or a combination thereof.4. The method of claim 1 , wherein the seed layer and the bulk layer comprise at least one compound independently selected from the group consisting of ZnO claim 1 , Zn(OH) claim 1 , NiO claim 1 , Ni(OH) claim 1 , CuO claim 1 , and Cu(OH).5. The method of claim 1 , further comprising processing the seed layer to at least one of dehydrate claim 1 , crystallize claim 1 , ...

Methods of Making Metal Halide Perovskites

Provided herein are methods of making metal halide perovskites, including methods of making bulk crystals or micro crystals. The metal halide perovskites may be a light emitting material. 1. A method of making a metal halide perovskite , the method comprising:contacting an organic ligand halide salt with a metal halide in a liquid to form a precursor liquid; andadding a precipitant to the precursor liquid to form one or more bulk single crystals of the metal halide perovskite, wherein the bulk single crystals have a 0D structure.2. The method of claim 1 , further comprising contacting an organic ligand precursor with an acid of the formula HX claim 1 , wherein X is a halogen claim 1 , to form the organic ligand halide salt.3. The method of claim 2 , wherein the acid is HBr claim 2 , the organic ligand precursor is N claim 2 ,N-dimethylethylenediamine claim 2 , and the organic ligand halide salt is N claim 2 ,N′-dimethylethane-1 claim 2 ,2-diammonium bromide.4. The method of claim 1 , wherein the metal halide is tin (II) bromide or tin (II) iodide.5. The method of claim 1 , wherein the metal halide and the organic ligand halide salt are present in the precursor liquid at a molar ratio of about 1:2 to about 1:6.6. The method of claim 1 , wherein the metal halide and the organic ligand halide salt are present in the precursor liquid at a molar ratio of about 1:3 to about 1:5.7. The method of claim 1 , wherein the liquid comprises a polar organic solvent.8. The method of claim 7 , wherein the polar organic solvent comprises dimethylformamide (DMF) claim 7 , dimethyl sulfoxide (DMSO) claim 7 ,γ-butyrolactone (GBL) claim 7 , or a combination thereof.9. The method of claim 1 , wherein the precipitant comprises dichloromethane (DCM).10. The method of claim 1 , wherein the bulk crystals are formed at a yield of at least 50%.11. A method of making a metal halide perovskite claim 1 , the method comprising:contacting an organic ligand halide salt with a metal halide in a liquid ...

Method for producing single crystalline zinc oxide nanoparticles

A method for producing single crystalline zinc oxide nanoparticles that is capable of mass production includes mixing, between processing surfaces which are disposed in a position facing each other so as to be able to approach and separate from each other and rotate relative to each other, a zinc oxide separating solvent prepared by homogeneously mixing an acidic substance with a solvent containing at least alcohol and a raw material solution obtained by mixing a zinc oxide nanoparticle raw material with a basic solvent or a raw material solution that is basic as a result of mixing and dissolving a zinc oxide nanoparticle raw material with and into a solvent, and discharging a mixed fluid in which zinc oxide nanoparticles have separated out from between the processing surfaces. The zinc oxide separating solvent and the raw material solution are mixed between the processing surfaces so that the mixed fluid becomes basic, and zinc oxide nanoparticles are generated by an acid-base reaction due to mixing of the acidic substance and the basic solvent.

Low-temperature synthesis of colloidal nanocrystals

Low-temperature organometallic nucleation and crystallization-based synthesis methods for the fabrication of semiconductor and metal colloidal nanocrystals with narrow size distributions and tunable, size- and shape-dependent electronic and optical properties. Methods include (1) forming a reaction mixture in a reaction vessel under an inert atmosphere that includes at least one solvent, a cationic precursor, an anionic precursor, and at least a first surface stabilizing ligand while stirring at a temperature in a range from about 50° C. to about 130° C. and (2) growing nanocrystals in the reaction mixture for a period of time while maintaining the temperature, the stirring, and the inert-gas atmosphere.

Method of Producing Nanoparticles

A method is provided of producing nanoparticles in the size range 1 nm to 1000 nm through the synthesis of one or more precursor fluids. The method includes providing a fluid medium comprising at least one precursor fluid and generating an electrical spark within said fluid medium to cause pyrolysis of said at least one precursor fluid in a relatively hot plasma zone to produce at least one radical species. Nanoparticles are formed by nucleation in the fluid medium in a cooler reaction zone about the plasma zone, where the radical species acts as a reactant or catalytic agent in the synthesis of material composing the nanoparticles. The spark is created by an electrical discharge having a frequency between 0.01 Hz and 1 kHz, and a total energy between 0.01 J and 10 J. The nanoparticles may comprise silicon, or compounds or alloys of silicon, and are typically useful in electronic and electrical applications. 1. A method of producing nanoparticles in the size range 1 nm to 1000 nm through the synthesis of one or more precursor fluids , the method including providing a fluid medium comprising at least one precursor fluid and generating an electrical spark within said fluid medium to cause pyrolysis of said at least one precursor fluid in a relatively short-lived hot plasma core of the spark which has a small spatial extent to produce at least one radical species , and to form nanoparticles by nucleation in the fluid medium In a cooler reaction zone surrounding the plasma core of the spark , wherein said at least one radical species acts as a reactant or catalytic agent in the synthesis of material composing said nanoparticles.2. The method of wherein the spark is created by an electrical discharge haying a frequency between 0.01 Hz and 1 kHz.3. The method of wherein the spark is created by an electrical discharge having a frequency between 1 Hz and 100 Hz.4. The method of wherein the spark has a total energy between 0.01 J and 10 J.5. The method of wherein the spark ...

NEW POLYMORPHIC FORMS OF ICOTINIB PHOSPHATE AND USES THEREOF

Disclosed is Icotinib phosphate (i.e., the compound of Formula (I)) and polymorph forms thereof, and methods of preparing and using them.

Zinc oxide free-standing substrate and method for manufacturing same

Disclosed is a self-supporting zinc oxide substrate composed of a plate composed of a plurality of zinc-oxide-based single crystal grains, wherein the plate has a single crystal structure in an approximately normal direction, and the zinc-oxide-based single crystal grains have a cross-sectional average diameter of greater than 1 μm. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a layer with a thickness of 20 μm or greater composed of zinc-oxide-based crystals on the oriented polycrystalline sintered body so that the layer has crystal orientation mostly in conformity with crystal orientation of the oriented polycrystalline sintered body; and removing the oriented polycrystalline sintered body to obtain the self-supporting zinc oxide substrate. The present invention can provide a self-supporting zinc oxide substrate being inexpensive and also suitable for having a large area as a preferable alternative material for a zinc oxide single crystal substrate.

DEEP ULTRAVIOLET NON-LINEAR OPTICAL CRYSTAL OF BARIUM BORATE HYDRATE, PREPARATION METHOD THEREFOR AND USE THEREOF

Provided area deep ultraviolet non-linear optical crystal of barium borate hydrate, a preparation method therefor and the use thereof. The chemical formula of the crystal is BaBOH, belonging to monoclinic system, with the space group thereof being P2, the crystal cell parameters thereof being a=6.7719(10) Å, b=21.1195(4) Å, c=6.8274(10) Å, β=119.3950(10)° , and the molecular weight thereof being 752.65. The non-linear optical crystal of borate is obtained by means of programmed cooling or natural cooling using a hydrothermal method. The crystal powder has a frequency-doubled effect of about 2 times that of KDP (KHPO) and an ultraviolet cut-off edge of below 175 nm and can be used as a deep ultraviolet non-linear optical crystal. The growth process of the crystal has advantages such as simple, a low cost, a low toxicity, a short growth cycle, stable physical and chemical properties, etc. The deep ultraviolet non-linear optical crystal of barium borate hydrate BaBOHis widely used in the preparation of non-linear optical devices such as frequency doubling generators, upper frequency converters, lower frequency converters, optical parametric oscillators etc. 1. A deep ultraviolet non-linear optical crystal of barium borate hydrate , having a formula of BaBOH , belonging to the monoclinic system , having a space group of P2 ,with lattice parameters of a=6.7719(10) Å , b=21.1195(4) Å , c=6.8274(10) Å , β=119.3950(10)° , and a molecular weight of 752.65.2. A method for preparing the deep ultraviolet non-linear optical crystal of barium borate hydrate according to claim 1 , wherein it uses a hydrothermal method and is conducted specifically according to the following steps:{'sub': 2', '3', '2', '2', '4', '4', '2', '3', '3', '2', '3', '3', '2', '3, '(a) BaCl, Ba(CHCOO).HO, BaSO, Ba(ClO), BaCOor Ba(NO)is added into the polytetrafluoroethylene liner of a 23-125 mL high-pressure reactor, HBOor BOis then added, and then 8-70 mL of deionized water is added, followed by mixing ...

NOVEL METAL POLYOXIDE, AND FUNCTIONAL FIBER OR TEXTILE PREPARED USING METAL POLYOXIDE

A novel metal polyoxide is a compound in which a plurality of oxygen elements are coupled to a transition metal element, and shows surface electrical resistance in addition to antibacterial and deodorizing activities. More specifically, the metal polyoxide contains manganese (III) molybdate and cobalt (III) molybdate having a novel structure. A preparation method thereof and a preparation method of a functional fiber or textile prepared using the same are provided. 1. Metal polyoxide as represented by chemical formula 1 or chemical formula 2 as below.{'br': None, 'sub': 7', '9', '32', '2, 'HMnMoO.xHO \u2003\u2003[Chemical Formula 1]'} {'br': None, 'sub': 9', '6', '24', '2, 'HCoMoO.yHO \u2003\u2003[Chemical Formula 2]'}, '(In chemical formula 1 as seen above, x is the number of water wherein it is a real number from 10 to 20)'}(In chemical formula 2 as seen above, y is the number of water wherein it is a real number of 5 to 15)2. Method for producing metal polyoxides represented by chemical formula 1 or chemical formula 2 as follows wherein the method comprises:stage (i) wherein hydrated molybdenum oxide is added to aqueous solution of hydrogen peroxide to produce aqueous solution of molybdenum;stage (ii) wherein metal compound solution is produced by adding hydrated manganese or hydrated cobalt to the aqueous solution of molybdenum to be heated afterwards;stage (iii) wherein the metal compound solution is concentrated; and {'br': None, 'sub': 7', '9', '32', '2, 'HMnMoO.xHO \u2003\u2003[Chemical Formula 1]'}, 'stage (iv) wherein the concentrated solution is crystallized to retrieve crystal of metal polyoxides;'} {'br': None, 'sub': 9', '6', '24', '2, 'HCoMoO.yHO \u2003\u2003[Chemical Formula 2]'}, '(In chemical formula 1 as seen above, x is the number of water wherein it is a real number from 10 to 20)'}(In chemical formula 2 as seen above, y is the number of water wherein it is a real number of 5 to 15)3. Producing method of metal polyoxide of wherein manganese ...

High thermal conductivity insulated metal substrates produced by plasma electrolytic oxidation

There is disclosed an insulated metal substrate, consisting of a dielectric oxide coatings of high crystallinity (>vol 90%) on aluminium, magnesium or titanium and high thermal conductivity (over 6 Wm −1 K −1 ), formed by plasma electrolytic oxidation on a surface comprising aluminium, magnesium or titanium. There is also disclosed a plasma electrolytic oxidation process for generating dielectric oxide coatings of controlled crystallinity on a surface of a metallic workpiece, wherein at least a series of positive pulses of current are applied to the workpiece in an electrolyte so as to generate plasma discharges, wherein discharge currents are restricted to levels no more than 50 mA, discharge durations are restricted to durations of no more than 100 μs and are shorter than the durations of each the positive pulses, and/or by restricting the power of individual plasma discharges to under 15W. There is also disclosed an insulated metal substrate capable of withstanding exposure to high temperatures (over 300° C.) and thermal shock or repeated thermal cycling of over 300° C., as a result of excellent adhesion of the insulating dielectric to the metal substrate, and the mechanically compliant nature of the coating (E˜20-30 GPa). Furthermore, there is disclosed a method of making these insulated metal substrates so thin as to be mechanically flexible or pliable without detriment to their electrical insulation.

ZEOLITE COMPOSITIONS AND METHODS FOR TAILORING ZEOLITE CRYSTAL HABITS WITH GROWTH MODIFIERS

Embodiments of the invention generally provide compositions of crystalline zeolite materials with tailored crystal habits and the methods for forming such crystalline zeolite materials. The methods for forming the crystalline zeolite materials include binding one or more zeolite growth modifiers (ZGMs) to the surface of a zeolite crystal, which results in the modification of crystal growth rates along different crystallographic directions, leading to the formation of zeolites having a tailored crystal habit. The improved properties enabled by the tailored crystal habit include a minimized crystal thickness, a shortened internal diffusion pathlength, and a greater step density as compared to a zeolite having the native crystal habit prepared by traditional processes. The tailored crystal habit provides the crystalline zeolite materials with an aspect ratio of about 4 or greater and crystal surfaces having a step density of about 25 steps/μmor greater. 1. A composition of a zeolite , comprising:a crystalline zeolite material comprised of a plurality of zeolite crystals, each zeolite crystal having a single cubic crystal structure;an upper surface of the zeolite crystal extending substantially parallel to a lower surface of the zeolite crystal;a length of the upper surface within a range from about 10 nm to about 1 μm;a width of the upper surface within a range from about 10 nm to about 1 μm;a plurality of side surfaces extending between the upper and lower surfaces;a thickness of the crystalline zeolite material extending substantially perpendicular between the upper and lower surfaces;an aspect ratio of about 4 or greater, wherein the aspect ratio is determined as a sum of one half of the length and one half of the width of the upper surface relative to the thickness of the crystalline zeolite material; anda plurality of vertical channels extending between the upper and lower surfaces, wherein each vertical channel independently has an exclusive diffusion pathway ...

METHOD FOR REMOVING RADIOACTIVE ELEMENT THORIUM IN RARE EARTH MINERAL

The present invention relates to a method for removing radioactive element thorium in a rare earth mineral, comprising: mixing the rare earth mineral with selenium dioxide in water, reacting radioactive element thorium with selenium dioxide by hydrothermal method, cooling to form a crystal, and separating the crystal to remove the radioactive element thorium. In the invention, tetravalent element thorium is selectively bound to inorganic ligand selenium dioxide in a hydrothermal environment to form a crystal, thereby achieving removal of radioactive element thorium. The method has high crystallization rate and high decontamination efficiency, and removes thorium from trivalent lanthanide element by crystallization solidification under a uniform reaction condition. Compared to a conventional industrial method for thorium separation, the method has low energy consumption and high separation ratio, enables one-step solidification separation, and effectively avoids the disadvantages of redundant separation operations and a large amount of organic and radioactive liquid wastes. 1. A method for removing radioactive element thorium in a rare earth mineral , comprising steps of:mixing the rare earth mineral with selenium dioxide in water,reacting radioactive element thorium in the rare earth mineral with selenium dioxide by a hydrothermal method,cooling the resulting solution to form a crystal, andseparating the crystal to remove the radioactive element thorium.2. The method as claimed in claim 1 , wherein the rare earth mineral comprises a lanthanide element and/or actinide element.3. The method as claimed in claim 2 , wherein a molar ratio of the lanthanide element and/or actinide element to selenium dioxide is 1: 2-10.4. The method as claimed in claim 1 , wherein the hydrothermal method includes performing the reaction at 200-230° C. for 1-3 days.5. The method as claimed in claim 1 , wherein the resulting solution is cooled to room temperature after the reaction is ...

TWO-DIMENSIONAL TRANSITION METAL CHALCOGENIDE NANOSTRUCTURE, DEVICE INCLUDING THE SAME, AND METHOD OF PREPARING THE TWO-DIMENSIONAL TRANSITION METAL CHALCOGENIDE NANOSTRUCTURE

Example embodiments relate to a method of preparing a two-dimensional (2D) transition metal chalcogenide nanostructure, the method including preparing a 2D transition metal chalcogenide nanostructure by a reaction between a transition metal precursor and a chalcogen precursor in a composition including a solvent, wherein the chalcogen precursor is a compound including a first bond connecting two neighboring chalcogen elements and the second bond connecting one of the two neighboring chalcogen elements and a hetero-element adjacent thereto, and binding energy of the second bond is 110% or less of the binding energy of the first bond, a 2D transition metal chalcogenide nanostructure prepared thereby, and a device including the 2D transition metal chalcogenide nanostructure. 1. A method of preparing a two-dimensional (2D) transition metal chalcogenide nanostructure , the method comprising:preparing a 2D transition metal chalcogenide nanostructure by a reaction between a transition metal precursor and a chalcogen precursor in a composition comprising a solvent,wherein the chalcogen precursor is a compound including a first bond connecting two neighboring chalcogen elements and a second bond connecting one of the two neighboring chalcogen element and a hetero-element adjacent thereto,a binding energy of the second bond is about 110% or less of a binding energy of the first bond.21. The method of claim 1 , wherein the chalcogen precursor comprises a compound represented by Formula :{'br': None, 'R1-A1-A2-R2, \u2003\u2003'}{'b': '1', 'wherein, in Formula ,'}A1 and A2 are each independently a chalcogen element,{'sub': 1', '5', '2', '10', '2', '10', '5', '10', '7', '20', '3', '20', '1', '5, 'R1 and R2 are each independently be a C-Calkyl group substituted or unsubstituted with a halogen, a C-Calkenyl group substituted or unsubstituted with a halogen, a C-Calkynyl group substituted or unsubstituted with a halogen, a C-Ccycloalkyl group substituted or unsubstituted ...

Interfused nanocrystals and method of preparing the same

Disclosed herein is a nanocrystal comprising a core comprising a first nanocrystal material, the first nanocrystal material including a Group II-VI semiconductor compound or a Group III-V semiconductor compound; a shell being disposed upon a surface of the core and comprising a second nanocrystal material, the second nanocrystal material being different from the first nanocrystal material and including a Group II-VI semiconductor compound or a Group III-V semiconductor compound; and an alloy interlayer disposed between the core and the shell, wherein the emission peak wavelength of the nanocrystal is shifted into a shorter wavelength than the emission peak wavelength of the core.

SOLUTION GROWTH OF SINGLE-CRYSTAL PEROVSKITE STRUCTURES

A method for growing single-crystal perovskite structures comprises immersing a film of a metal precursor compound on a surface of a substrate, the metal precursor compound comprising a metal ion B, in a solution comprising a cation precursor compound, the cation precursor compound comprising a cation ion A and an anion X, at a concentration of the cation precursor compound, a growth time, and a growth temperature sufficient to dissolve the film to release the metal ion B to form a complex with the anion X and sufficient to induce recrystallization of the complex with the cation ion A to form a plurality of single-crystal perovskite structures composed of A, B and X. The single-crystal perovskite structures, devices incorporating the same, and methods of using the devices are also provided. 1. A method for growing single-crystal perovskite structures , the method comprising immersing a film of a metal precursor compound on a surface of a substrate , the metal precursor compound comprising a metal ion B , in a solution comprising a cation precursor compound , the cation precursor compound comprising a cation ion A and an anion X , at a concentration of the cation precursor compound , a growth time , and a growth temperature sufficient to dissolve the film to release the metal ion B to form a complex with the anion X and sufficient to induce recrystallization of the complex with the cation ion A to form a plurality of single-crystal perovskite structures composed of A , B and X.2. The method of claim 1 , wherein the perovskite of the perovskite structures has a formula ABX claim 1 , wherein A is a protonated amine or an alkali metal ion; B is selected from a post-transition metal claim 1 , a metalloid claim 1 , a transition metal claim 1 , an alkaline earth metal claim 1 , and a lanthanide; and X is selected from a halide claim 1 , RCOO claim 1 , wherein R is H or an alkyl group claim 1 , CN claim 1 , N claim 1 , and BH.3. The method of claim 2 , wherein A is a ...

Copper-Indium-Gallium-Chalcogenide Nanoparticle Precursors for Thin-Film Solar Cells

Nanoparticles containing IUPAC group 11 ions, group 13 ions and sulfur ions are synthesized by adding metal salts and an alkanethiol in an organic solvent and promoting the reaction by applying heat. Nanoparticles are formed at temperatures as low as 200° C. The nanoparticles may be thermally annealed for a certain amount of time at a temperature lower than the reaction temperature (usually ˜40° C. lower) to improve the topology and narrow the size distribution. After the reaction is complete, the nanoparticles may be isolated by the addition of a non-solvent and re-dispersed in organic solvents including toluene, chloroform and hexane to form a nanoparticle ink. Additives may be incorporated in the reaction solution to tailor the final ink viscosity.

Continuous Synthesis Of High Quantum Yield InP/ZnS Nanocrystals

The invention relates to a continuous-flow synthesis process for the preparation of high quality indium phosphide/zinc sulfide core/shell semiconduting nanocrystals in particular quantum dots (QD) conducted in a micro-reaction system comprising at least one mixing chamber connected to one reaction chamber. 1. (canceled) Continuous-flow method for the preparation of InP/ZnS nanoparticles conducted in a micro-reaction system comprising at least one mixing chamber connected to one reaction chamber and comprising the following steps:a. Preparing an indium precursor solution by mixing an indium salt, a fatty protic alkylamine, a fatty alkylacid and zinc carboxylate with an inert solvent optionally heating up to 50-200° C. to get a clear solution under water and oxygen free atmosphere,b. Preparing a phosphine precursor solution comprising tris(trimethylsilyl) phosphine in the inert solvent under water and oxygen free atmosphere,c. Injecting the indium precursor solution in excess to the phosphine precursor solution into the mixing chamber to obtain a reaction mixture, wherein the mixing chamber is a magnetic mixing micro-chamber, preferably at a flow rate from 0.1 ml/min to 10 ml/min,d. Forwarding and heating the reaction mixture at a temperature from 160 to 320° C., within the reaction chamber until InP core suspension is obtained,e. Forwarding the core suspension into a mixing chamber and injecting a shell precursor solution comprising a Zn source and a S source to the core suspension and preferably capping ligands into the mixing chamber,f. Forwarding and heating the suspension at a temperature from 160 to 320° C., preferred 200 to 280° C. for shell preparation within the reaction chamber,g. Cooling.2. (canceled) Method according to wherein Zn source and S source is a single source.3. (canceled) InP/ZnS nanoparticle obtainable by the method of to .4. (canceled) Formulation comprising the nanoparticle of .5. (canceled) Device comprising the nanoparticle of .6. A InP/ZnS ...

HETEROEPITAXIAL HYDROTHERMAL CRYSTAL GROWTH OF ZINC SELENIDE

A method of synthesizing zinc selenide crystals. The method includes forming an aqueous growth medium by combining a mineralizer solution of an alkali nutrient with a feedstock including zinc and selenium. A seed crystal is added to the growth medium. The aqueous growth medium and seed crystal are pressurized and a thermal gradient applied such that a temperature of a first portion of the aqueous growth medium is greater than a second portion of the aqueous growth medium. The zinc and selenium are dissolved into the mineralizer solution from the feedstock in the first portion of the aqueous growth medium and spontaneously forms at least one single crystal of zinc selenide on the seed crystal in the first portion of the aqueous growth medium. 1. A method of synthesizing a zinc selenide single crystal substrate , the method comprising:forming an aqueous growth medium by combining a mineralizer solution comprising an alkali nutrient with a feedstock comprising zinc and selenium;adding a seed crystal to the aqueous growth medium;pressurizing the aqueous growth medium; andapplying a thermal gradient to the pressurized aqueous growth medium and the seed crystal such that a first portion of aqueous growth medium is heated to a temperature that is greater than a temperature of a second portion of the aqueous growth medium,wherein zinc and selenium are dissolved into the mineralizer solution from the feedstock in the first portion of the aqueous growth medium and at least one crystal of zinc selenide spontaneously forms onto the seed crystal in the second portion of the aqueous growth medium.2. The method of claim 1 , wherein the seed crystal is gallium arsenide.3. The method of claim 2 , wherein the gallium arsenide seed crystal has an orientation selected from [001] claim 2 , [010] claim 2 , [011] claim 2 , [100] claim 2 , [101] claim 2 , [110] claim 2 , or [111].4. The method of claim 2 , wherein the gallium arsenide seed crystal is optionally miscut in an angle ranging ...

LARGE-SCALE MUTL-STEP SYNTHESIS METHOD FOR ULTRALONG SILVER NANOWIRE WITH CONTRALLABLE DIAMETER

A large-scale multi-step synthesis method for ultralong silver nanowire with controllable diameter, comprises: an ethylene glycol solution containing polyvinylpyrrolidone and sodium chloride is fully heated to obtain a solution with strong reducibility, and then silver nitrate in glycol solution is added for a generation of a large number of crystal seeds; hydrogen peroxide is used to achieve the selection of the crystal seeds for a small amount of crystal seeds with particular sizes; the temperature is immediately raised to increase the reaction rate until the threshold of the etching crystal seeds of nitric acid is broke through; the temperature is lowered for long-timed reaction to slow down the reaction rate, reduce the probability of the isotropic seeds by self-nucleation and promote the absorption of small nucleus in the radial direction of large nucleus or nanowire, thus obtaining the ultralong silver nanowire. 1. A method of large-scale multi-step synthesis for an ultralong silver nanowire with a controllable diameter comprising the following steps:step 1, phase of screening of crystal seeds:heating ethylene glycol solution containing a surfactant at a temperature of 140 to 160° C. to obtain a solution I with strong reducibility; adding alkali metal halide dissolved in ethylene glycol into the solution I to yield a solution II; dissolving silver nitrate in ethylene glycol for preparing a precursor solution, the concentration of silver nitrate is between 0.001 to 5 mol/L;adding the precursor solution into the solution II that reduces silver nitrate rapidly into a large number of multiple twinned crystal seeds with different sizes and part of isotropic seeds; adding etching agent into the above solution with a large number of crystal seeds results in preferentially etching the isotropic seeds which are not resistant to etching and the multiple various sizes of the twinned crystals, thus screening limited amount of particular sizes of the multiple twinned ...

PATTERNS OF FLUORESCENT SEEDED NANORODS

Provided are printed patterns and objects including, for example, a film or 3D object, which may include one or more nanorods. According to the subject matter provided, the nanorods may reduce or diminish inter-particle interaction in the pattern or object. 167.-. (canceled)68. A printed pattern composed of multiple material layers , each of said layers comprising a plurality of nanorods , the nanorods being selected to have substantially reduced overlap between the nanorods' absorption spectra and the nanorods' emission spectra , and wherein the plurality of nanorods are configured to exhibit in the pattern a reduced or diminished inter-particle interaction , wherein the printed pattern is selected from a film and a 3D object.69. The printed pattern according to claim 68 , the pattern being composed of multiple material layers claim 68 , each of said layers comprising a plurality of nanorods claim 68 , the nanorods being selected to have substantially reduced overlap between the nanorods' absorption spectra and the nanorods' emission spectra claim 68 , and wherein the plurality of nanorods are configured to adapt in the pattern an inter-particle distance controllable to a reduced or diminished inter-particle interaction.70. The printed pattern according to claim 68 , wherein the pattern is a 3D object or a film.71. A printed pattern composed of multiple material layers claim 68 , each of said layers comprising a plurality of nanorods claim 68 , the nanorods being selected to have substantially reduced overlap between the nanorods' absorption spectra and the nanorods' emission spectra claim 68 , and wherein the plurality of nanorods are configured to adapt in the pattern a seed-to-seed distance larger than a FRET distance associated with said nanorods claim 68 , to affect a reduced or diminished inter-particle interaction claim 68 , the pattern being optionally selected from a film and a 3D object.72. The printed pattern according to claim 68 , wherein the seeded ...