ПОМЕХОЗАЩИЩЕННАЯ ФОТОДЕТЕКТОРНАЯ СИСТЕМА

Изобретение относится к медицине. Офтальмологическая линза с электропитанием содержит: первый датчик, включающий в себя один или более фотодиодов, продуцирующих первый выходной ток; и первый интегратор, принимающий первый выходной ток и преобразующий его в первое выходное напряжение; аналогово-цифровой преобразователь, выполненный с возможностью принимать первое выходное напряжение и на основании первого выходного напряжения обеспечивать цифровой выходной сигнал; второй датчик, содержащий один или более фотодиодов, продуцирующих второй выходной ток; второй интегратор, принимающий второй выходной ток и преобразующий его во второе выходное напряжение; и светоизолирующий элемент, выполненный с возможностью изолирования по существу всего падающего света от второго датчика; первый ключ выходного напряжения, выполненный с возможностью выборочного соединения первого выходного напряжения с аналогово-цифровым преобразователем; первый цифровой регистр, выполненный с возможностью выборочного приема ...

Устройства детектирования света с защитной облицовкой и относящиеся к ним способы

Изобретение относится к области измерительной техники и касается устройства детектирования света. Устройство содержит реакционную структуру, образующую множество реакционных углублений для вмещения реакционного раствора и реакционного центра, основу устройства, расположенную под реакционной структурой и содержащую множество датчиков света, схему устройства, электрически соединенную с датчиками света, облицовочный слой, проходящий вокруг каждого световода и расположенный между каждым световодом и схемой устройства и защитный слой, проходящий вокруг каждого световода и расположенный между каждым световодом и облицовочным слоем. Реакционный центр выполнен с возможностью генерирования световых излучений под действием света возбуждения после обработки реакционным раствором. Световоды проходят в основу устройства от вводных областей в направлении соответствующего датчика света. Защитный слой предотвращает взаимодействие между реакционным раствором, проходящим через реакционную структуру и световод ...

ПОМЕХОЗАЩИЩЕННАЯ ФОТОДЕТЕКТОРНАЯ СИСТЕМА

Изобретение относится к медицине. Офтальмологическая линза с электропитанием содержит: первый датчик, включающий в себя один или более фотодиодов, продуцирующих первый выходной ток; и первый интегратор, принимающий первый выходной ток и преобразующий его в первое выходное напряжение; аналогово-цифровой преобразователь, выполненный с возможностью принимать первое выходное напряжение и на основании первого выходного напряжения обеспечивать цифровой выходной сигнал; второй датчик, содержащий один или более фотодиодов, продуцирующих второй выходной ток; второй интегратор, принимающий второй выходной ток и преобразующий его во второе выходное напряжение; и светоизолирующий элемент, выполненный с возможностью изолирования по существу всего падающего света от второго датчика; первый ключ выходного напряжения, выполненный с возможностью выборочного соединения первого выходного напряжения с аналогово-цифровым преобразователем; первый цифровой регистр, выполненный с возможностью выборочного приема ...

PHOTOMETER

DETECTION CIRCUIT

Light measurement

INTEGRATED PHOTODETECTOR WITH CHARGE STORAGE BIN OF VARIED DETECTION TIME

An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit includes a charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers directly into the at least one charge carrier storage region based upon times at which the charge carriers are produced.

SPECTROPHOTOMETRIC MECHANISM FOR TELEMETERING.

PROCEDURE FOR THE CHEMILUMINESZENZ GAS ANALYSIS AND PHOTODIODE CHEMILUMINESZENZDETEKTOR.

Spectrophotometer

Procede et pyrometre pour mesurer, sans contact et a distance, la temperature de surface d'un corps

Pyrometre pour la mesure sans contact et a distance de la temperature de la surface d'un corps, dans lequel le detecteur thermique est un photomultiplicateur 1 ayant un seuil inferieur ou egal a une longueur d'onde d'environ 0,4 'mu'm - le pyrometre etant ainsi apte a fonctionner dans les courtes longueurs d'onde, et notamment dans le domaine ultraviolet, avec un bon rapport signal/bruit - et comportant en outre, en amont du photomultiplicateur, un dispositif de modulation de rayonnement electromagnetique 4 et, en aval du photomultiplicateur, un dispositif de detection synchrone 5 recevant le signal de sortie du photomultiplicateur et un signal de synchronisation en provenance du dispositif de modulation.

패턴 검사 장치 및 패턴 검사 방법

... 본 발명의 일 태양의 패턴 검사 장치는, 제1 검사광의 조명 형상을 변경 가능한 투과 조명 광학계와, 대물 렌즈와 편광 소자를 가지며, 대물 렌즈와 편광 소자를 이용하여 마스크 기판에 제2 검사광을 조명하고 마스크 기판으로부터의 반사광을 통과시키는 반사 조명 광학계와, 편광 소자를 광로 외부로부터 광로 상으로 이동시키는 것이 가능하고 또한 편광 소자를 광로 상으로부터 광로 외부로 이동시키는 것이 가능한 구동 기구와, 스테이지가 이동하는 중에 제1 검사광이 조명된 마스크 기판으로부터의 투과광을 수광하는 센서와, 마스크 기판과 센서의 사이에 배치되며, 마스크 기판으로부터 대물 렌즈로 투과광이 입사 가능한 개구수(NA)가 고개구수인 상태와 저개구수인 상태의 사이에서 전환 가능해지도록 상기 투과광의 광속 직경을 조정하는 개구 조리개를 구비한 것을 특징으로 한다.

OPTICAL RECEIVER AND LASER RADAR HAVING SAME

The present invention relates to an optical receiver and a laser radar having the same which can be miniaturized, and can have improved stability and reliability and an excellent signal-to-noise ratio. The optical receiver comprises: a plurality of optical detection areas for converting an optical signal reflected from a target into an electric signal, and outputting the signal; a signal combiner for combining an output signal of the plurality of optical detection areas; a plurality of switches between each of the plurality of optical detection areas and the signal combiner; and a controller for controlling the plurality of switches so that each of the plurality of optical detection areas is selectively connected to the signal combiner based on whether an input of optical signal reflected from the target exists. COPYRIGHT KIPO 2017 ...

OPTICAL SENSOR

According to an embodiment of the present invention, an optical sensor sensing an object includes: a light emitting unit emitting light; a light receiving unit detecting the light reflected from the object; a protective cover disposed on the light emitting unit and the light receiving unit, respectively; and a polarizing unit disposed to be spaced from the light emitting unit or the light receiving unit in at least one of a place between the protective cover and the light emitting unit and a place between the protective cover and the light receiving unit. The optical sensor can remove optical crosstalk which is a structural noise by using the polarizing unit and a wave plate, thereby reducing a defect rate. COPYRIGHT KIPO 2016 ...

반사판 기반 레이저 감지 장치 및 그의 외란광 노이즈 제거 방법

... 반사판 기반 레이저 감지 장치는 정해진 파장의 레이저 신호를 송출하고, 상기 레이저 신호가 반사판에 의해 반사되어 되돌아오는 반사 펄스 신호를 포함하는 수신 신호로부터 상기 정해진 파장을 포함하는 제1 파장대역의 신호와 상기 제1 파장대역에 인접한 제2 파장대역의 신호를 검출하며, 상기 제2 파장대역의 신호를 이용하여 상기 제1 파장대역의 신호에서 상기 제1 파장대역의 외란광 노이즈를 제거하여 상기 반사 펄스 신호를 검출한다. 그리고 검출된 상기 반사 펄스 신호의 SNR(Signal-to-noise ratio)을 토대로 상기 제2 파장대역의 신호를 제어하여 상기 반사 펄스 신호의 SNR이 최적화시킨다.

광신호처리장치 및 광신호처리방법

... 본 발명은 입사되는 광에 대하여 서로 다른 2개의 감지 회로를 순차적으로 사용함으로써, 광량을 정확하게 감지할 수 있는 광신호처리장치 및 광신호처리방법을 제안한다. 상기 광신호처리장치는, 광센서회로, 제1스위치, 증폭기, 광신호변환블록, 제2스위치, 및 제3스위치를 포함한다.

단일 칩 집적 방식의 태양센서

... 단일 칩 집적 방식의 태양센서 및 어레이형 태양센서가 개시되며, 본원의 일 실시예에 따른 단일 칩 집적 방식의 태양센서는, 상측에서 입사되는 태양광이 통과하는 창 영역이 형성된 투광부 및 상기 창 영역을 통해 입사한 상기 태양광을 감지하도록 상기 투광부의 하측에 배치되는 광다이오드를 포함하고, 상기 광다이오드의 감지 결과에 기초하여 상기 태양센서에 대하여 미리 설정된 검출 목표 구간에 대한 태양의 위치를 판단하는 검출부를 포함하고, 상기 광다이오드는 태양이 상기 검출 목표 구간에 위치할 때 태양광이 상기 창 영역을 통과하여 입사되는 영역인 상기 검출부의 상면의 중심부 영역을 둘러싸는 형태로 배치되는 것일 수 있다.

레이저 레이더와 거리 측정 방법

... 본 발명은 복수개의 레이저와, 상기 레이저를 구동시켜 목표물을 검출하는 검출 레이저 빔을 방출할 수 있도록 구성된 구동 회로를 포함하며, 근거리 범위 내의 목표물이 검출 레이저 빔을 수신하고, 반사된 에코가 검출기에 의해 수신될 수 있도록 구성된 블라인드 보완 유닛을 더 포함하는 발사 유닛; 상기 검출 레이저 빔이 목표물에 의해 반사된 에코를 수신하고 전기 신호로 변환할 수 있도록 구성된 복수개의 검출기를 포함하는 수신 유닛; 및 수신 유닛에 결합되고, 전기 신호를 수신하여 목표물의 거리 및/또는 반사율을 계산하도록 구성된 처리 유닛;을 포함하는 레이저 레이더를 제공한다 ...

광 검출 장치

... 광 검출 장치(1A)는 광 검출 소자(10A)와, 패키지(20)를 구비한다. 광 검출 소자(10A)는 반도체 기판(16)과, 광 흡수막(30)을 구비한다. 광 흡수막(30)은 반도체 기판(16)의 주면(16a)에 있어서의 광 검출 영역(11)의 주위의 영역 중, 적어도 일부의 영역 상에 마련되어 있다. 광 흡수막(30)은 광 흡수층(31)과, 공진층(32)과, 반사층(33)을 포함하는 다층 구조를 가진다. 피검출광의 파장에 있어서, 공진층(32)의 내부의 광 투과율은 광 흡수층(31)의 내부의 광 투과율보다 크고, 반사층(33)의 표면의 광 반사율은 공진층(32)의 표면의 광 반사율보다 크다. 이것에 의해, 패키지 내를 산란하는 광을 저감시킬 수 있는 광 검출 장치가 실현된다.

Image sensor having an extended dynamic range upper limit

An apparatus is described that includes an image sensor having timing and control circuitry and threshold circuitry. The timing and control circuitry is to generate signals to cause multiple transfers of charge from a photo-diode to a storage capacitor within a pixel cell during an image capture sequence. The threshold circuitry is to track the storage capacitor's voltage over the course of the multiple transfers and recognize when the storage capacitor's voltage reaches a threshold.

Spectrometer for the simultaneous measurement of intensity in various spectral regions

A polychromator in a Paschen-Runge mounting in which intensity measurements are made by means of a row of photodiodes. The spectral intensity distribution of at least two spectral regions on the Rowland circle is transmitted to the row of photodiodes by image conductors and is measured there.

Opto-electronic converter, image reading device, and image forming apparatus

An opto-electronic converter includes a plurality of light-receiving elements configured to convert light of different colors into analog signals, each of the analog signals representing a pixel, an amplifier unit configured to amplify the analog signals, into which the light is converted by the light-receiving elements, in each pixel group, the pixel group including a plurality of the light-receiving elements, the plurality of light-receiving elements converting light of different colors, and a gain switch unit configured to switch, for each of the light-receiving elements included in the pixel group, a gain of the amplifier unit to a gain determined in advance depending on a color of the light converted by the light-receiving element.

STRETCHABLE MULTIMODAL SENSOR AND METHOD OF FABRICATING OF THE SAME

A stretchable multimode sensor and a method of fabricating the same are provided. The stretchable multimode sensor may include a substrate which is formed of a flexible material and includes a pressure sensor area, an optical sensor area, a temperature sensor area and a switching element area, a pressure sensor which is disposed on the pressure sensor area and includes an amorphous metal, an optical sensor which is disposed on the optical sensor area and includes an amorphous metal, and a temperature sensor which is disposed on the temperature sensor area and includes an amorphous metal, and a switching element which is disposed on the switching element area and includes an amorphous metal.

ELECTRICALLY MODULATED IR SENSITIVE PHOTODIODE AND ITS INTEGRATION IN CMOS

Electrically modulatable photodiode, comprising a substrate having a first and a second p-n junction, a common contact for jointly contacting the p or n dopings of the two p-n junctions, and two further contacts for separately contacting the other doping of the p and n dopings of the two p-n junctions, and a circuit, wherein the circuit is designed to measure a current flow caused by charge carriers which have been generated by impinging radiomagnetic waves in the substrate and which have reached the first further contact, and to switch the second further contact at different times to at least one first and one second switching state, wherein in the first switching state the second further contact is switched to the floating state and in the second switching state a potential is applied, and wherein a blocking voltage applied between the common contact and the first further contact is constant.

APPARATUS AND METHODS FOR THREE-DIMENSIONAL SENSING

A three-dimensional (3D) sensing apparatus together with a projector subassembly is provided. The 3D sensing apparatus includes two cameras, which may be configured to capture ultraviolet and/or near-infrared light. The 3D sensing apparatus may also contain an optical filter and one or more computing processors that signal a simultaneous capture using the two cameras and processing the captured images into depth. The projector subassembly of the 3D sensing apparatus includes a laser diode, one or optical elements, and a photodiode that are useable to enable 3D capture.

LIGHTING DEVICE HAVING AT LEAST ONE LIGHT SENSOR

Various embodiments relate to a lighting device including at least one light source for emitting a polarized primary light beam (P), at least one luminescent material volume for at least partially converting primary light of the primary light beam (P) into secondary light (S) having a different wavelength, which luminescent material volume is arranged in a path of at least a primary light beam (P), and at least one light sensor, which is arranged at least in a part of an original path of the primary light beam (P) after the location of the luminescent material volume, wherein the light sensor is sensitive at least to the primary light and is polarization-sensitive. Various embodiments can, in particular, be applied to vehicle lighting devices, in particular vehicle lamps, e.g., headlamps, or modules thereof.

Method for detecting intrusion

An intrusion detecting method using an intrusion detecting system which includes an optical fiber line installed in an area in which intrusion is to be detected, a laser diode inputting an optical signal to the optical fiber line, a photodiode detecting a reflected optical signal when the optical signal is reflected from the optical fiber line, an intrusion determining unit comparing a waveform of the reflected optical signal detected by the photodiode with a set reference waveform to determine whether an intrusion has occurred, and a laser diode temperature measuring unit measuring a temperature of the laser diode, includes designating, by the intrusion determining unit, a temperature of the laser diode at a first point in time as a first temperature and setting, to a reference waveform, a waveform of a first reflected optical signal caused by an input optical signal input by the laser diode at the first point in time, designating, by the intrusion determining unit, a temperature of the ...

Detector, methods for operating a detector and detector pixel circuit

A pixelated sensor comprises a semiconductor substrate chip with a plurality of sensor pixels and a detector chip with a plurality of detector pixels. Each of the sensor pixels is configured as a photodiode and is electrically connected to an input node of one of the detector pixels. The detector pixels are further configured to convert and output the sensor input to an analog to digital converter. The detector chip further comprises first and second macropixels and a plurality of second macropixels, wherein each first macropixel is formed by subset of detector pixels switchably interconnected via a first conducting grid and wherein each second macropixel is formed by a subset of first macropixels switchably interconnected via a second conducting grid.

Optical sensor and method of operating an optical sensor

An optical sensor includes at least one photodetector configured to be reverse biased at a voltage exceeding a breakdown voltage by an excess bias voltage. At least one control unit is configured to adjust the reverse bias of the at least one photodetector. A method of operating an optical sensor is also disclosed.

Comparative colorimeter

A comparative colorimeter for use in the field which simultaneously compares the color densities of two liquid samples and designates the degree of difference. The apparatus includes two major subsystems, optical and electronic. The optical subsystem is designed to provide identical light beams through both the sample and standard solutions and to minimize the effect which imperfect sample tubes have on the output. The electronic subsystem includes a log conversion and differential amplifier circuit for generating a difference signal representative of the difference between the optical densities of the sample and standard solutions. A correction circuit is provided for compensating for initial differences in the optical paths of the sample and standard solutions.

Приемник импульсных лазерных сигналов

Изобретение относится к лазерной технике, а именно к аппаратуре приема лазерного излучения. Предложен приемник импульсных лазерных сигналов, содержащий герметичный корпус с защитным окном, за которым размещены фоточувствительный элемент и схема обработки сигнала, включающая усилитель и формирователь выходного сигнала, выход которого является выходом устройства, введен второй фоточувствительный элемент с вторым усилителем, на выходах каждого усилителя введены последовательно соединенные дифференцирующее звено и нуль-компаратор. Выходы нуль-компараторов подключены к входам коммутатора, управляемого с выхода порогового устройства, включенного на выходе первого дифференцирующего звена, выход коммутатора подключен к входу формирователя выходного сигнала, при этом чувствительные площадки фоточувствительных элементов расположены на минимально возможном расстоянии b*=h(2tgα+tg2β) одна от другой, где h - расстояние от внутренней поверхности защитного окна до чувствительных площадок фоточувствительных ...

Handpyrometer

Photodiode mit einer kompensierten spektralen Antwort

Ein optischer Detektor umfasst eine erste Menge von einer oder mehreren Photodioden, die eingerichtet sind, einen ersten Photostrom gemäß einer ersten spektralen Antwortfunktion einfallenden Lichts zu erzeugen, eine zweite Menge von einer oder mehreren Photodioden, die eingerichtet sind, einen zweiten Photostrom gemäß einer zweiten spektralen Antwortfunktion des einfallenden Lichts zu erzeugen, und eine dritte Menge von einer oder mehreren Photodioden, die eingerichtet sind, einen dritten Photostrom gemäß einer dritten spektralen Antwortfunktion des einfallenden Lichts zu erzeugen. Der optische Detektor umfasst ferner ein Modul, das eingerichtet ist, eine Angabe der Intensität des einfallenden Lichts gemäß einer vierten spektralen Antwortfunktion auf der Grundlage von jedem vom ersten Photostrom, vom zweiten Photostrom und vom dritten Photostrom auszugeben.

Passive optical sensors

Assembly 1 detects the state of light source 9, which may be a human-readable status indicator lamp, e.g. an alert or on/off LED, or a lamp on legacy equipment which lacks a remote monitoring interface. Passive photoelectric sensor 3, such as an 8-volt solar cell, generates an electrical potential when light is incident upon it. The photo-detector is coupled to a field-effect transistor 4, e.g. a depletion-mode MOSFET, switching between distinct on and off states at a threshold gate voltage. Non-transparent housing 47 may exclude light and is preferably flexible, to provide a light-tight seal when held against equipment housing 41 by e.g. magnets or adhesive tape 48. The sensor may be optically coupled to light pipe (50, figure 6), coupled to the lamp. There may be one or more photo-electric sensors responsive to particular wavelengths, possibly using filters (52, figure 5), or light pipes having different optical properties.

OPTICAL SYSTEMS

Passive optical sensors

PHOTOMETER.

Method and apparatus for determining the appearance of an object

VEHICLE COMPOSITE PANE WITH AN INTEGRATED LIGHT SENSOR

The invention relates to a vehicle composite screen having an integrated light sensor, at least comprising an outer pane (1) and an inner pane (2) which are interconnected by a thermoplastic intermediate layer (3), wherein at least one photodiode (4) located on a circuit board (5) is arranged between the outer pane (1) and the inner pane (2), the photodiode (4) being an SMD component.

VEHICLE COMPOSITE PANE WITH AN INTEGRATED LIGHT SENSOR

The present invention relates to a vehicle composite pane with an integrated light sensor, at least comprising an outer pane (1), and an inner pane (2) that are bonded to one another via a thermoplastic intermediate layer (3), wherein a plurality of photodiodes (4) situated on a circuit board (5) are arranged between the outer pane (1) and the inner pane (2), wherein the photodiodes (4) are an SMD components and wherein the photodiodes (4) are arranged on the circuit board (5) as groups of parallel connected photodiodes (4), wherein all groups are connected to a common electrical input (9) and each group is connected to a separate electrical output (10.1, 10.2).

OPTICAL SENSOR FOR RANGE FINDING AND WIND SENSING MEASUREMENTS

Techniques are disclosed for providing an optical sensor that can be used for wind sensing and an optical scope. The optical sensor can include a photodiode, an electrical switch, a trans-impedance amplifier (TIA), and a capacitive trans-impedance amplifier (CTIA), enabling the optical sensor to perform both wind-sensing and range-finding functions. Some embodiments may include some or all of these components in an application-specific integrated circuit (ASIC), depending on desired functionality.

OPTICAL SENSOR ARRANGEMENT

The invention relates to an optical sensor arrangement comprising a sensor (D1, D2) for detecting electromagnetic waves and an aperture assigned to the sensor, wherein, in order to detect the electromagnetic waves entering through the aperture, at least two sensors (D1, D2) arranged behind one another are provided, and wherein the operational spectral ranges of the sensors (D1, D2) arranged behind one another match, wherein the preceding sensor (D1) in each case - as seen in the direction of the incident radiation - forms an attenuation filter for the sensors (D2) arranged behind said sensor.

INTERCONNECT STRUCTURE FOR COUPLING AN ELECTRONIC UNIT AND AN OPTICAL UNIT, AND OPTOELECTRONIC MODULE

The present invention relates to an interconnect structure for coupling an electronic unit for outputting and/or receiving electric signals, and an optical unit for converting said electric signals into optical signals and/or vice versa. The present invention also relates to an optoelectronic module comprising such an interconnect structure. The interconnect structure comprises an electrically insulating substrate and at least one pair of transmission leads (104, 106) to be coupled between said electronic unit (120) and said optical unit (100), a first lead (104) being operable as a signal line, a second lead (106) being operable as a ground line, wherein said second lead (106) is formed to have a lower impedance than said first lead (104).

Photoelectric sensor

Pixel unit, image sensor and manufacturing method thereof, and imaging device

APPARATUS FOR MEASURING AN AMPLITUDE OF AN OPTICAL SIGNAL, AND PYROMETER HAVING SAME

PYROMETER FOR MEASURING METHOD AND, WITHOUT CONTACT AND REMOTE, THE SURFACE TEMPERATURE OF A BODY

광학적 농도 측정방법

... [과제] 간이한 수단으로 극미량 영역의 농도까지 비파괴로 정확하고 신속하게 소정의 화학성분의 농도를 측정할 수 있는 농도 측정방법, 및, 피측정 대상중의 화학성분의 농도를 정확·신속하게 또한 나노 오더의 극미량 농도영역까지 실시간으로 측정할 수 있고, 여러 가지 모양과 형태에 있어서 구현화될 수 있는 만능성을 구비하는 농도 측정방법을 제공한다. [해결 수단] 피측정 대상에 대해서의 광흡수율이 다른 제1 파장의 광과, 제2 파장의 광을 피측정 대상에 각각 타임 셰어링법으로 조사하고, 각 파장의 광의 해당 조사에 의해 피측정 대상을 광학적으로 통해 오는 각 파장의 광을 공통의 수광 센서로 수광하고, 해당 수광에 따라서 상기 수광 센서로부터 출력하는 제1 파장의 광에 관한 신호와 제2 파장의 광에 관한 신호의 차동신호를 형성하고, 해당 차동신호에 근거해서 피측정 대상에 있어서의 화학성분의 농도를 도출한다.

TAPE DETECTING DEVICE AND METHOD USING MULTIPLE POLARIZING FILTERS

The present invention relates to a tape detecting device and method using multiple polarizing filters, including: a light emitting portion for emitting light of the predetermined wavelength so as to irradiate the light to at least a part of a banknote; a light receiving portion for detecting polarized light emitted from the light emitting portion and reflected from the banknote; a first polarizing filter positioned in an optical path between the light emitting portion and the light receiving portion; a second polarizing filter positioned in the optical path between the light emitting portion and the light receiving portion; and a tape detecting portion for determining whether or not a tape is attached to the part of the banknote to which the light is irradiated, based on the intensity of the polarized light detected by the light receiving portion. COPYRIGHT KIPO 2018 ...

SYSTEM FOR MEASURING FUNCTIONAL COMPONENT OF PLANT IN PLANT FACTORY

The present invention relates to a system for measuring a functional component of a plant in a plant factory capable of measuring the functional component by using a system of a non-destructive method to measure a growth degree and quality of the plant with an inexpensive and convenient method in the plant factory. The system for measuring the functional component of the plant in the plant factory comprises: a halogen lamp; a CCD detector; and a controlling unit. The halogen lamp irradiates light to the plant grown in the plant factory. The CCD detector senses reflected light of the halogen lamp reflected from the plant. The controlling unit calculates a content of the functional component based on the reflected light sensed through the CCD detector. The controlling unit includes: an inputting unit; a storing unit; a main processor; and a wired/wireless transmitting unit. The inputting unit senses the reflected light of the CCD detector. The storing unit stores a reference value. The main ...

APPARATUS AND METHOD FOR MEASURING DISTANCE USING LASER

Disclosed are an apparatus and a method for measuring a distance using a laser which reduce a phase difference. The apparatus for measuring a distance using a laser comprises: a transmitting unit for generating a transmitting signal to measure a distance to an object, and transmitting the transmitting signal to the object; a temperature measurer for measuring the temperature of the apparatus for measuring a distance using a laser; a phase compensator for performing a time delay according to the temperature measured on a receiving signal corresponding to the transmitting signal; and a distance calculator for calculating the distance using an output signal of the phase compensator. COPYRIGHT KIPO 2018 (110) Signal generator (120) Frequency converter (130) First amplifier (140) Laser diode (150) Photo diode (160) Second amplifier (170) Phase compensator (180) Memory (190) Temperature measurer (200) Distance calculator (AA) Transmission signal (BB) Reception signal ...

광자를 검출할 수 있는 최적의 위치로 아발란치 포토 다이오드를 정렬시키는 방법

... 광자를 검출할 수 있는 최적의 위치로 아발란치 포토 다이오드를 정렬시키는 방법을 개시한다. 본 실시예의 일 측면에 의하면, SPAD(Single Photon Avalanche Diode)로 동작되는 단일광자 검출소자 및 NFAD(Negative Feedback Avalanche Diode)로 동작되는 단일광자 검출소자 모두로 동작 가능하되, 어느 하나로 선택적으로 동작하는 아발란치 포토 다이오드가 NFAD로서 광자를 자신의 중심으로 입사받기 위한 위치로 정렬되는 방법에 있어서, 상기 단일광자 검출장치가 SPAD로서 동작하는 제1 동작과정과 SPAD로서 동작하는 단일광자 검출장치가 위치를 조정하며 각 위치에서의 아발란치 신호를 측정하는 측정과정과 상기 측정과정에서 측정된 아발란치 신호 중 가장 큰 아발란치 신호가 발생한 위치로 상기 단일광자 검출장치의 위치를 조정하는 조정과정 및 상기 단일광자 검출장치가 NFAD로서 동작하는 제2 동작과정을 포함하는 것을 특징으로 하는 단일광자 검출장치 위치 정렬 방법을 제공한다.

Double-beam spectrophotometer using a photodiode detector

A spectrophotometer comprising a light source, a spectroscope which separates the light of light source depending on the wavelengths, chops the light into the first and second light beams and allows the light beams to pass through the reference cell and sample cell, a photodiode which alternately receives the light beams from the reference cell and sample cell, a variable gain amplifier which amplifies a light current of photodiode, an A/D converter which converts and guides the reference output and sample output as the digital values synchronously with the chopping period, and a again setter which sets the gain of the variable gain amplifier depending on the reference output value from the A/D converter.

Color monitoring with data storage means

Color changes in a target, such as a chemical sensor using a colorchanging indicator reagent to detect the presence of a poisonous gas, are continuously monitored by reflecting the target (10) on to a sensor (16) light originating from first one and then another light source (12a, 12b, etc), each having a different, known emission wavelength. In each cycle, direct light from the appropriate source is also collected by another sensor (14), connected in a closed loop (26) with circuitry in which the emission intensity is compared with a known reference value (38) and which adjusts the emission intensity so as to stabilize it at this constant reference value. Once this is stabilized, the reflected light intensity signal is passed to a data store (20), after which a divider (22) produces an output signal (36) representing the ratio of the reflected light intensities in two separate cycles originating from two different light sources (12a, 12b, etc). The conduct of each cycle is controlled by ...

Color ambient light sensor circuitry for electronic devices

An electronic device may be provided with a display mounted in a housing. The display may have an array of pixels that form an active area and may have an inactive area that runs along an edge of the active area. A color ambient light sensor may gather ambient light measurements through a window in an opaque masking layer in the inactive area. The color ambient light sensor may have photodiodes with different spectral sensitivities and may have a dark current photodiode that is insensitive to light. A set of analog-to-digital converters may be used to digitize photodiode signals from the photodiodes. A switch array may be used to distribute signals from the photodiodes to each of the analog-to-digital converters. This allows the output of each photodiode to be averaged over multiple analog-to-digital converters to remove any impact of variations in performance between converters.

Method and apparatus for determining the appearance of an object

A method for determining the appearance of an object to be replicated and an apparatus therefor are described herein. The method consists in providing a controlled illumination to illuminate a surface of the object, measuring the object with a CCD camera to collect an image map of a plurality of points on the surface and processing that information to produce an appearance mapping of the object. Calibration of the apparatus is done by measuring calibration patches illuminated with the same illumination. When the apparatus is made in view of replicating the appearance of an object, a comparison can be done by similarly producing an appearance mapping of the replicate and by comparing it to the appearance mapping of the object.

Ambient Light Detector, Detector Array and Method

An ambient light detector, a detector array and a method are disclosed. In an embodiment an ambient light sensor includes a first plurality of sensor elements, each sensor element configured to provide a signal in response to a level of illumination and a second plurality of reference elements, each reference element configured to provide a reference signal and each including a blocking element configured to shield the respective reference element from being illuminated, wherein the first plurality is larger than the second plurality and the first plurality of sensor elements and the second plurality of reference elements are arranged in an array, and wherein a sensor element and a reference element are laterally arranged on or in a common layer substrate sharing at least one common first contact. 1. An ambient light sensor comprising:a first plurality of sensor elements, each sensor element configured to provide a signal in response to a level of illumination; anda second plurality of reference elements, each reference element configured to provide a reference signal and each comprising a blocking element configured to shield the respective reference element from being illuminated,wherein the first plurality is larger than the second plurality and the first plurality of sensor elements and the second plurality of reference elements are arranged in an array, andwherein a sensor element and a reference element are laterally arranged on or in a common layer substrate sharing at least one common first contact.2. The ambient light sensor of claim 1 , wherein second contacts for the reference elements are arranged on a surface of the reference elements facing the blocking element.3. The ambient light sensor of claim 1 , wherein second contacts for the sensor elements are arranged on a surface of the sensor elements facing the blocking element.4. The ambient light sensor of claim 1 , wherein the common contact is arranged on a surface of the common layer substrate facing ...

INTEGRATED CIRCUIT WITH SEQUENTIALLY-COUPLED CHARGE STORAGE AND ASSOCIATED TECHNIQUES

Described herein are techniques that improve the collection and readout of charge carriers in an integrated circuit. Some aspects of the present disclosure relate to integrated circuits having pixels with a plurality of charge storage regions. Some aspects of the present disclosure relate to integrated circuits configured to substantially simultaneously collect and read out charge carriers, at least in part. Some aspects of the present disclosure relate to integrated circuits having a plurality of pixels configured to transfer charge carriers between charge storage regions within each pixel substantially at the same time. Some aspects of the present disclosure relate to integrated circuits having three or more sequentially coupled charge storage regions. Some aspects of the present disclosure relate to integrated circuits capable of increased charge transfer rates. Some aspects of the present disclosure relate to techniques for manufacturing and operating integrated circuits according to ...

LOW CURRENT DETECTION

A sensor arrangement for light sensing for light-to-frequency conversion. The sensor arrangement includes a photodiode, an integrator operable to perform an integration phase during an integration time by converting a photocurrent generated by the photodiode into an input voltage, a voltage analog-to-digital converter (ADC) operable to perform a modulation phase by converting the input voltage (V IN ) into a digital output signal (ADC_RESULT) which is indicative of the photocurrent generated by the photodiode, a first switch electrically coupled to the photodiode and the integrator input, and a second switch electrically coupled to the input voltage node and a second reference voltage.

Electronic correction of photodiode radiant sensitivity

Schaltungsanordnung zum Einstellen des Spannungspotentials am HF-Ausgang eines pin-Photoempfängers und Photoempfängeranordnung

Schaltungsanordnung zum Einstellen eines Ausgangspotentials (Va) am HF-Ausgang (SIG) eines pin-Photoempfängers, der sich in Gleichspannungskopplung mit einem nachfolgenden Elektronikschaltkreis befindet, auf ein bestimmtes Potential, wobei an den pin-Photoempfänger eine über einen ohmschen Abschlusswiderstand (R50) das Ausgangspotential (Va) beeinflussende Versorgungsspannung anlegbar ist und wobei die Schaltungsanordnung eine einen Ausgangsanschluss (1) aufweisende Regelschleife zum Erzeugen und Regeln der Versorgungsspannung umfasst, dadurch gekennzeichnet, dass die Regelschleife einen ohmschen Nachbildungswiderstand (R50*), der an den ohmschen Abschlusswiderstand (R50) angeglichen ist, und Mittel zur Messung einer Spannungsdifferenz über dem Nachbildungswiderstand (R50*) und zum Reproduzieren der Spannungsdifferenz als Spannungspotential am Ausgangsanschluss (1) der Regelschleife aufweist.

Verfahren zur berührungslosen, strahlungsthermometrischen Temperaturmessung

Die Erfindung beschreibt ein Verfahren zur berührungslosen, strahlungsthermometrischen Temperaturmessung, bei dem ein fotovoltaisch ohne Vorspannung betriebener Fotodioden-Strahlungsempfänger einen zur empfangenen Strahlungsleistung proportionalen Kurzschluss-Fotostrom erzeugt, der von einem Strom-Spannungswandler verarbeitet wird, wobei anschließend ein der Strahlungsleistung entsprechendes Temperatursignal erzeugt und beispielsweise an eine Temperaturanzeige weitergegeben wird sowie eine Vorrichtung zur berührungslosen, strahlungsthermometrischen Temperaturmessung, insbesondere zur Durchführung des Verfahrens, umfassend einen fotovoltaisch ohne Vorspannung betriebenen, einen zur Strahlungsintensität proportionalen Kurzschluss-Strom erzeugenden Fotodioden-Strahlungsempfänger, einen zur Verarbeitung des Kurzschluss-Stroms eingerichteten Strom-Spannungswandler, sowie einer Ausgabeeinheit zur Ausgabe eines der Strahlungsintensität entsprechenden Temperatursignals.

COLOUR MONITORING

COLOR CONTROL.

SENSOR INTEGRATOR SYSTEM

COLOUR MONITORING

... 2058432 9015972 PCTABS00003 Colour changes in a target, such as a chemical sensor using a colour-changing indicator reagent to detect the presence of a poisonous gas, are continuously monitored by reflecting the target (10) on to a sensor (16) light originating from first one and then another light source (12a, 12b, etc), each having a different, known emission wavelength. In each cycle, direct light from the appropriate source is also collected by another sensor (14), connected in a closed loop (26) with circuitry in which the emission intensity is compared with a known reference value (38) and which adjusts the emission intensity so as to stabilise it at this constant reference value. Once this is stabilised, the reflected light intensity signal is passed to a data store (20), after which a divider (22) produces an output signal (36) representing the ratio of the reflected light intensities in two separate cycles originating from two different light sources (12a, 12b, etc). The conduct ...

Appareil pour mesurer l'amplitude d'un signal optique, et pyromètre comportant un tel appareil

L'appareil concerne un appareil optique pour mesurer l'amplitude d'un signal de rayonnement optique à l'aide d'un détecteur, d'une manière indépendante des variations de température du détecteur. L'appareil comporte une microstructure en silicium 3 ayant une barre 32 qui est mise en vibration par un rayonnement optique provenant d'une source excitatrice alternative 34. La barre 32 bloque et laisse passer alternativement le rayonnement d'une zone optiquement émettrice 1 vers une photodiode 4 formant le détecteur. Un circuit d'échantillonnage 41, piloté par la source d'excitation 34, délivre deux signaux simultanés représentant la présence et l'absence du rayonnement, d'où une indication de la température de ladite zone 1 est tirée par différenciation entre ces deux signaux. Application à la pyrométrie et à d'autres mesures analogiques de rayonnement optique.

OPTICAL DETECTING APPARATUS

SENSING SYSTEM USING OPTICAL FIBER SENSOR WITHOUT ERRORS CAUSED BY INSTALLATION AND ENVIRONMENTS

The present invention relates to a sensing system using an optical fiber-based optical sensor. The sensing system comprises: a light source unit to selectively or simultaneously transmit optical signals having a first and a second wavelength; a filter unit to reflect an optical signal of the first wavelength, and allow an optical signal of the second wavelength to pass therethrough; an optical cable unit positioned between the filter unit and the light source unit; a sensor unit which reflects the optical signal of the second wavelength, and is coupled to an end of the filter unit; a receiving unit including a photodiode to select or separate the reflected optical signals of the first and the second wavelength to receive the optical signals; and a control unit to control the light source unit and the receiving unit and analyze strength of the optical signals. The strength of the reflected optical signal of the second wavelength changes in accordance with a sensed event. The prevent invention ...

APPARATUS FOR MEASURING AMOUNT OF INCIDENT LIGHT AND APPARATUS FOR MEASURING ANGLE OF INCIDENT LIGHT USING PHOTODIODE

포토어레이, 특히 시간 의존성 이미지 데이터의 비동기성 검출과 샘플링된 밝기의 감지를 동시 실시하기 위한 포토어레이

... 본 발명은 포토어레이(1)에 관한 것으로서, 복수의 셀(10)을 포함하고, 상기 셀(10)의 각각은 상기 각 셀(10)에 작용하는 광의 강도(L)에 비례하는 광전류(I)를 발생하도록 구성되는 수단(20)을 포함하고, 그리고 여기서 상기 셀(10)의 각각은 상기 광전류(I)를 발생하기 위한 각각의 수단(20)에 연결되는 변화 검출 회로(100)를 포함하고, 상기 변화 검출 회로(100)는 상기 강도(L)가 상기 각 셀(10)로부터의 선행하는 변화 이벤트 후에 한계치(T, T') 만큼 변화하는 변화 이벤트가 발생하는 경우에만 출력 신호를 발생하도록 구성된다. 본 발명에 따르면, 상기 광전류(I)를 발생하는 수단(20)은 추가적으로 각 셀(10)의 광의 밝기의 척도인 상기 광전류(I)의 크기를 추정하기 위해서도 사용된다.

고온 측정법을 위한 완전 차동 증폭

... 본 개시물은 증폭 섹션에 대한 개선들을 통해, 고온계의 신호대 잡음비를 개선하고, 샘플링 속도를 증가시키고, 동적 범위를 증가시키기 위한 시스템들, 방법들, 및 장치들을 기술한다. 특히, 단일 스테이지 비-차동 증폭기들은 잡음의 비례하는 증가 없이 이득을 증가시키는 차동 증폭기 회로로 대체될 수 있다. 차동 증폭기 회로는 광 검출기로부터 차동 전류를 수신하고 트랜스컨덕턴스 이득을 가지는 것에 응답하여 차동 전압 출력을 생성하는, 병렬로 배열된 트랜스임피던스 증폭기 회로들의 쌍을 포함할 수 있다.

센서 모듈

... 본 발명은 센서 모듈에 관한 것이다. 본 발명에 따른 센서모듈은 기판, 상기 기판에 배치되는 제 1 포토다이오드(First Photodiode) 및 제 2 포토다이오드(Second Photodiode) 및 상기 제 1 포토다이오드 또는 상기 제 2 포토다이오드 중 어느 하나의 상부에 배치되는 필터부(Filter Part)를 포함하고, 필터부는 금속층을 포함할 수 있다.

POWER MEASURING PROTECTION METHOD AND LASER PROTECTION SYSTEM

IMAGE SENSOR HAVING AN EXTENDED DYNAMIC RANGE UPPER LIMIT

An apparatus is described that includes an image sensor having timing and control circuitry and threshold circuitry. The timing and control circuitry is to generate signals to cause multiple transfers of charge from a photo-diode to a storage capacitor within a pixel cell during an image capture sequence. The threshold circuitry is to track the storage capacitor's voltage over the course of the multiple transfers and recognize when the storage capacitor's voltage reaches a threshold.

Output-current detection chip for diode sensors, and diode sensor device

The present invention relates to an output-current detection IC chip for diode sensors and a diode sensor device, which reduce the influence by a leak current of a protection circuit. The present invention is equipped with a sensor unit in which anodes of N (N being an integer of 2 or more) diode sensors are connected to each other, a common terminal connected to a connection portion where the anodes are connected to each other, N input terminals connected to cathodes of the diode sensors, N+1 protection circuits connected to the input terminals and the common terminal, an I-V conversion circuit which converts an output current of each diode sensor into a voltage, a chopper circuit which switches the polarity of the output current and inputs the same to the I-V conversion circuit, and a dummy protection circuit connected to the input of the I-V conversion circuit.

LIGHT INTENSITY DETECTING UNIT, DISPLAY PANEL, AND METHOD FOR DETECTING LIGHT INTENSITY

A light intensity detecting unit, a display panel, and a method of detecting light intensity are provided. The light intensity detecting unit includes N scanning signal lines, J reading signal lines, at least one enable signal line, N×J photoelectric conversion circuits configured to convert optical signals into electric signals, and at least one gating circuit. Each of the reading signal lines is connected to one or more of at least one gating circuit. Each of the gating circuits is connected to output terminals of a plurality of photoelectric conversion circuits. Each of the scanning signal lines is connected to one or more photoelectric conversion circuits. Each of the enable signal line is connected to one or more of the at least one gating circuit. The gating circuit is configured to transmit the electric signal to the reading signal line in response to an enable signal from the enable signal line.

PIXEL CIRCUIT

A pixel circuit is provided. The pixel circuit may comprise a photodiode, a comparator circuit, a capacitor, a first switch circuit, a second switch circuit and a third switch circuit. The photodiode is arranged to accumulate charges in response to incident radiation, to generate a photodiode signal. The comparator circuit is arranged to generate an output signal according to a voltage level of a specific node within the pixel circuit during a read-out phase of the pixel circuit. The capacitor is coupled between a control voltage terminal of the pixel circuit and the specific node, the first switch circuit is coupled between the photodiode and the specific node, the second switch circuit is coupled between the specific node and an output terminal of the pixel circuit, and the third switch circuit is coupled between the output terminal and the comparator circuit.

SENSOR DEVICE FOR DETECTING DISINFECTING STATE

Devices and methods for detecting a disinfecting state are described. An example of a sensor device is disclosed to include: a housing; a radiation sensitive material disposed on one or more portions of an external surface of the housing; a sensor configured to measure intensity information associated with ultraviolet (UV) radiation of a first frequency band; a controller configured to record the intensity information, temporal information associated with measuring the intensity information, or both; and a transceiver device configured to transmit and receive radio frequency (RF) signals.

Pixel circuit having capacitor with identical electrodes to improve sensing efficiency and operating method thereof

There is provided a circuit to improve the sensing efficiency of pixels that uses the induction effect of a capacitor to duplicate a voltage deviation caused by additional electrons and uses a circuit to cancel out the voltage deviation during reading pixel data thereby improving the sensing efficiency.

OPTICAL COMPONENT AND IMAGE SENSOR COMPRISING AN OPTICAL COMPONENT

FOCAL PLANE ARRAY HAVING RATIOED CAPACITORS

МНОГОСЛОЙНОЕ СТЕКЛО ДЛЯ ТРАНСПОРТНОГО СРЕДСТВА С ИНТЕГРИРОВАННЫМ ДАТЧИКОМ СВЕТА

Изобретение относится к области автомобильной оптоэлектроники и касается многослойного стекла для транспортного средства с интегрированным датчиком света. Многослойное стекло содержит наружное стекло (1), внутреннее стекло (2), которые соединены друг с другом с помощью термопластичного промежуточного слоя (3), при этом между наружным стеклом (1) и внутренним стеклом (2) расположено несколько находящихся на печатной плате (5) фотодиодов (4), при этом фотодиоды (4) являются конструктивными элементами SMD, и при этом фотодиоды (4) расположены на печатной плате (5) в виде групп из параллельно включенных фотодиодов (4), при этом все группы соединены с общим электрическим входом (9), и каждая из групп соединена с отдельным электрическим выходом (10.1, 10.2). Изобретение обеспечивает получение усовершенствованного многослойного стекла транспортного средства с интегрированным датчиком света. 3 н. и 11 з.п. ф-лы, 7 ил.

Combustion process monitoring method - detecting changes in radiation spectrum intensity and interpreting results

The radiation spectrum from 280-410nm is detected and changes in the intensity interpreted. Long wave length radiation is not evaluated. Preferably, only radiation levels above a predetermined threshold value are processed; the threshold value is adjusted depending on the noise level. Semiconductor photo diodes esp. groups GaP-, GaAsP-, Si are used with filters. USE/ADVANTAGE - Control of combustion products e.g. CO, OH, CH, CHO, C etc.

OPTISCHES EMISSIONSSPEKTROMETER MIT KASKADIERTEN LADUNGSSPEICHERN

Ein Optisches Emissionsspektrometer (1), umfassendeine Anregungseinrichtung (2) für eine zu untersuchende Probe (3),ein dispersives Element (7) zur spektralen Zerlegung eines von einer angeregten Probe (3) ausgesandten Lichts (5),eine Vielzahl von Photodioden (P1-Pn, P1-Pn), die so angeordnet sind,dass mit verschiedenen Photodioden (P1-Pn, P1-Pn) verschiedene spektrale Anteile (S1-Sn) des ausgesandten, zerlegten Lichts (5) detektierbar sind,und eine Vielzahl von Ausleseelektroniken (22) für die Photodioden (P1-Pn, P1-Pn), ist dadurch gekennzeichnet,dass eine jeweilige Ausleseelektronik (22) eine Ladungsspeicherbaugruppe (23) aufweist, die mehrere einzelne Ladungsspeicher (31-34) umfasst, wobei die Ladungsspeicher (31-34) kaskadierend miteinander verschaltbar sind, so dass von einer zugehörigen Photodiode (P1-Pn, P1-Pn) zufließende Ladungen nacheinander die Ladungsspeicher (31-34) auffüllen,und dass mittels der jeweiligen Ausleseelektronik (22) die Ladungen der einzelnen Ladungsspeicher ...

Gerät zum Messen der Lichtleistung eines lichtemittierenden Halbleiterelements.

Photometric coupling

Detection circuit

Riflescope with integrated wind sensor and targeting display

Techniques are disclosed for providing the weapon-mounted optical scope that provides for wind sensing and the display a ballistic solution without the need for a separate device. Embodiments may include various additional sensors housed within the weapon-mounted optical scope to provide data for the ballistic solution calculation. Embodiments may further include a display at the input aperture rather than internally at the first-focal-plane, enabling for simpler, more cost effective embodiments. Additionally or alternatively, embodiments may include a laser, separate from the wind sensing laser, to perform range-finding functions, and/or an enhanced-image assembly.

CIRCUIT FOR DETECTING LIGHT PULSES

Circuit de détection d'impulsions lumineuses destiné à être connecté à une photodiode (2), le circuit de détection comportant une capacité d'intégration (Cint), des moyens de décharge (13) et des moyens de comparaison (12) adaptés à comparer une tension d'intégration (Vint) aux bornes de la capacité d'intégration avec un seuil de tension de référence (Vseuil) pour produire un signal de détection d'une impulsion lumineuse. Le seuil de tension de référence (Vseuil) est un seuil auto-adaptatif dépendant d'un niveau de bruit de fond lumineux. Dispositif de détection comprenant une photodiode et un tel circuit de détection. Matrice de détection comportant une pluralité de tels dispositifs de détection.

LIGHT DETECTION DEVICES WITH PROTECTIVE LINER AND METHODS RELATED TO SAME

Light detection devices and related methods are provided. The devices may comprise a reaction structure for containing a reaction solution with a relatively high or low pH and a plurality of reaction sites that generate light emissions. The devices may comprise a device base comprising a plurality of light sensors, device circuitry coupled to the light sensors, and a plurality of light guides that block excitation light but permit the light emissions to pass to a light sensor. The device base may also include a shield layer extending about each light guide between each light guide and the device circuitry, and a protection layer that is chemically inert with respect to the reaction solution extending about each light guide between each light guide and the shield layer. The protection layer prevents reaction solution that passes through the reaction structure and the light guide from interacting with the device circuitry.

OPTICAL SENSOR ARRANGEMENT

The invention relates to an optical sensor arrangement comprising a sensor (D1, D2) for detecting electromagnetic waves and an aperture assigned to the sensor, wherein, in order to detect the electromagnetic waves entering through the aperture, at least two sensors (D1, D2) arranged behind one another are provided, and wherein the operational spectral ranges of the sensors (D1, D2) arranged behind one another match, wherein the preceding sensor (D1) in each case - as seen in the direction of the incident radiation - forms an attenuation filter for the sensors (D2) arranged behind said sensor.

Method and device for evaluating light rays characteristic and device for regulating its writing unit

APPARATUS TO MEASURE the AMPLITUDE Of an Optical signal, AND PYROMETER COMPRISING SUCH an APPARATUS

A CIRCUIT FOR DETECTING LIGHT PULSES

Circuit de détection d'impulsions lumineuses destiné à être connecté à une photodiode (2), le circuit de détection comportant une capacité d'intégration (Cint), des moyens de décharge (13) et des moyens de comparaison (12) adaptés à comparer une tension d'intégration (Vint) aux bornes de la capacité d'intégration avec un seuil de tension de référence (Vseuil) pour produire un signal de détection d'une impulsion lumineuse. Le seuil de tension de référence (Vseuil) est un seuil auto-adaptatif dépendant d'un niveau de bruit de fond lumineux. Dispositif de détection comprenant une photodiode et un tel circuit de détection. Matrice de détection comportant une pluralité de tels dispositifs de détection.

CONCENTRATION MEASURING

The measuring apparatus for determining mineral concentration, suits analysis of alloy including a little mineal element. The apparatus uses laser for getting variable wavelength, and composes spectrometer (20) using rotary polygon mirror (27) forming dual structure of grating (25) and reflector (26). The apparatus composes focus of spectrometer at outlet side slit (21); focusing lens (23) gathering beam of radiation from glow discharge lamping (22); laser beam radiation laser (24), the mirror driven by motor (27); focusing lens (29) gathering laser beam on slit plate (28) having sliparray; amplifier (36) for amplifying signal of photodiode (33); A/D convertor for photomultiplier tube. Copyright 1997 KIPO ...

Light-receiving device, light receiver using same, and method of fabricating light-receiving device

An apparatus includes a flip-chip semiconductor substrate, a light detection element configured to be formed over the flip-chip semiconductor substrate and to have a laminate structure including a first semiconductor layer of a first-conductive-type, a light-absorption layer formed over the first semiconductor layer, and a second semiconductor layer of a second-conductive-type formed over the light-absorption layer, an inductor configured to be connected to the light detection element over the flip-chip semiconductor substrate, an output electrode for bump connection configured to output a current generated by the light detection element through the inductor, a bias electrode for bump connection configured to apply a bias voltage to the light detection element through a bias electrode, and a line configured to cause a metal line of the inductor and the light detection element to be connected to the output electrode or the bias electrode.

Color capture system and device

Exemplary embodiments provide a simple, inexpensive, and easy-to-operate color capture device that can capture color information and transmit the captured color information to an interface device such as smartphone, where the captured color information is optionally processed and is then transmitted to a remote server for subsequent production of the customized cosmetic.

ELECTRIC CIRCUIT ARRANGEMENT TO DETERMINE A LEVEL OF AN EXCESS BIAS VOLTAGE OF A SINGLE PHOTON AVALANCHE DIODE

An electric circuit arrangement to determine a level of an excess bias voltage of a single photon avalanche diode comprises an evaluation circuit being configured to determine a level of an excess bias voltage of the single photon avalanche diode in dependence on a signal course of an output signal of the single photon avalanche diode. In a first operational cycle of the circuit arrangement a voltage jump to the level of the excess bias voltage is generated at an output terminal, when a photon hits a photosensitive area of the single photon avalanche diode. In a subsequent second operational cycle, the output terminal of the single photon avalanche diode is coupled to a supply terminal. 1. An electric circuit arrangement to determine a level of an excess bias voltage of a single photon avalanche diode , comprising:a supply terminal to apply a supply potential,a reference terminal to apply a reference potential,a bias terminal to apply a bias potential to bias the single photon avalanche diode,an output terminal to provide an output signal of the single photon avalanche diode, the single photon avalanche diode being connected between the bias terminal and the output terminal,a controllable switching circuit,an evaluation circuit to evaluate the output signal,wherein the controllable switching circuit is configured to couple the output terminal to the reference terminal in a first operational cycle of the circuit arrangement so that a voltage jump to the level of the excess bias voltage occurs at the output terminal, when a photon hits a photosensitive area of the single photon avalanche diode, and to couple the output terminal to the supply terminal in a subsequent second operational cycle,wherein the evaluation circuit is configured to determine the level of the excess bias voltage in dependence on a signal course of the output signal.2. The electric circuit arrangement of claim 1 ,wherein the single photon avalanche diode is quenched, when the voltage jump of the ...

IMAGE SENSOR PIXELS WITH CONDUCTIVE BIAS GRIDS

An image sensor with an array of pixels is provided. In order to achieve high image quality, it may be desirable to improve well capacity of individual pixels within the array by forming deep photodiodes in a thick substrate. When forming the array of pixels, conductive contacts may be formed in a back surface of the substrate opposing ground contacts located on a front side of the substrate. A conductive grid layer may be formed over the conductive contacts. A color filter layer may be formed over the conductive grid layer that may include a barrier grid in which color filter material is deposited. The conductive grid layer and conductive contacts may be biased to a voltage to improve the strength of electric fields in the substrate. Conductive contacts will thereby improve charge collection and electrical isolation and prevent electrical crosstalk and blooming. 1. An electronic device having an array of image sensor pixels , comprising:photosensitive elements formed in a semiconductor substrate having first and second opposing surfaces;conductive contacts formed in the first surface of the semiconductor substrate;a conductive layer formed over the conductive contacts;a color filter array formed on the first surface of the semiconductor substrate;an array of microlenses formed over the color filter array; andground contacts formed on the second surface of the semiconductor substrate.2. The electronic device defined in claim 1 , further comprising:a bond pad formed at an edge of the array of image sensor pixels; anda wire bond coupled between the bond pad and external voltage supply circuitry, wherein the external voltage supply circuitry is configured to apply a voltage to the conductive layer.3. The electronic device defined in claim 1 , further comprising:a conductive via that is formed in the semiconductor substrate at an edge of the array of image sensor pixels and that is coupled between the conductive layer and external voltage supply circuitry, wherein the ...

METHOD FOR CONTROLLING THE GAIN AND ZERO OF A MULTI-PIXEL PHOTON COUNTER DEVICE, AND LIGHT-MEASURING SYSTEM IMPLEMENTING SAID METHOD

A method for controlling the gain and zero of a multiple pixel photon counter device, and light-measuring system implementing said method. 1. A method for controlling the gain of a multiple pixel photon counting device , comprising an array of avalanche photodiodes , the device being supplied with voltage and providing a signal when it detects photons , comprising the following steps of:acquiring the signals provided by the device for predefined periods, until a predefined total measurement time is reached,forming an amplitude histogram, including a set of peaks, from the signals thus acquired, and for which the amplitude is drawn in abscissa and a number of photoelectrons or thermal agitation electrons is drawn in ordinate,determining the respective positions of two consecutive peaks, measurable on the histogram,producing an error signal which is equal to the deviation between both consecutive peaks, andby means of the error signal, regulating the voltage which supplies the device, so as to keep the deviation equal to a predefined set point.2. The method according to claim 1 , wherein the predefined periods are equal to each other and chosen in an interval ranging from 50 ns to 500 ns.3. The method according to claim 1 , wherein the predefined total measurement time is chosen in an interval ranging from 0.5 s to 10 s.4. The method according to claim 1 , wherein the two consecutive peaks are the first and second peaks of the histogram.5. The method according to claim 1 , wherein the gain of a device consisting of a multi-pixel photon counter is controlled.6. A light-measuring system comprising:a photon counting device, comprising an array of avalanche photodiodes,a supply device for providing the voltage to the photon counting device,an amplification device for amplifying the signals provided by the photon counting device and providing amplified signals, anda processing device for acquiring the amplified signals and processing the same so as to count the photons, ...

OPTO-ELECTRONIC CONVERTER, IMAGE READING DEVICE, AND IMAGE FORMING APPARATUS

An opto-electronic converter includes a plurality of light-receiving elements configured to convert light of different colors into analog signals, each of the analog signals representing a pixel, an amplifier unit configured to amplify the analog signals, into which the light is converted by the light-receiving elements, in each pixel group, the pixel group including a plurality of the light-receiving elements, the plurality of light-receiving elements converting light of different colors, and a gain switch unit configured to switch, for each of the light-receiving elements included in the pixel group, a gain of the amplifier unit to a gain determined in advance depending on a color of the light converted by the light-receiving element. 1. An opto-electronic converter comprising:a plurality of light-receiving elements configured to convert light of different colors into analog signals, each of the analog signals representing a pixel;an amplifier unit configured to amplify the analog signals, into which the light is converted by the light-receiving elements, in each pixel group, the pixel group including a plurality of the light-receiving elements, the plurality of light-receiving elements converting light of different colors; anda gain switch unit configured to switch, for each of the light-receiving elements included in the pixel group, a gain of the amplifier unit to a gain determined in advance depending on a color of the light converted by the light receiving element.2. The opto-electronic converter according to claim 1 , wherein the plurality of light-receiving elements are arranged in a single direction for each of the colors of the received light.3. The opto-electronic converter according to claim 1 , further comprising an A/D conversion unit configured to convert the analog signals amplified by the amplifier unit into digital signals claim 1 ,wherein the gain switch unit switches the gain of the amplifier for each of the light-receiving elements included in ...

Device for detecting electromagnetic radiation

An electromagnetic radiation detection circuit includes a photodetector transforming the received electromagnetic radiation into an electric current. A readout circuit is coupled to a first terminal of the photodetector and configured to transform a current signal into a voltage signal. A capacitor has a first terminal electrically coupled to the first terminal of the photodetector and a second terminal electrically coupled to the readout circuit. A resistor has a first terminal electrically coupled to the capacitor and to a first terminal of the photodetector. A bias circuit is electrically coupled to a second terminal of the resistor and configured to bias the photodetector during a first time period by means of the resistor.

SYSTEMS AND METHODS FOR FLASH DETECTION

A flash detection device comprises at least a first and a second sensor module, wherein each of the sensor modules comprises at least a photodiode for detecting an irradiance emitted by a source, and the first sensor module comprises at least an angular efficiency attenuator configured for attenuating the irradiance received by the photodiode according to a predetermined angular efficiency profile, wherein the at least first and second sensor modules are configured for collecting light from substantially the same field of view, and the angular efficiency attenuator of the first sensor module causes the first and second sensor modules to have complementary predetermined angular efficiency profiles, so that, for angles of view within a common field of view of the first and second sensor modules, a combination of irradiance measurements of the first and second sensor modules enables to derive an irradiance source angle of the source. 1. A flash detection device comprising at least a first and a second sensor module , wherein each of the sensor modules comprises at least a photodiode for detecting an irradiance emitted by a source , and the first sensor module comprises:at least an angular efficiency attenuator configured for attenuating the irradiance received by the photodiode according to a predetermined angular efficiency profile, the at least first and second sensor modules are configured for collecting light from substantially the same field of view, and', 'the angular efficiency attenuator of the first sensor module causes the first and second sensor modules to have complementary predetermined angular efficiency profiles, so that, for angles of view within a common field of view of the first and second sensor modules, a combination of irradiance measurements of the first and second sensor modules enables to derive an irradiance source angle of the source., 'wherein2. The device according to claim 1 , wherein the second sensor module also comprises at least an ...

INTEGRATED PRE-AMPLIFICATION LIGHT DETECTION SYSTEMS AND METHODS OF USE THEREOF

Systems for detecting light (e.g., in a flow stream) are described. Light detection systems according to embodiments include a photodetector, an input modulator configured to modulate signal input into the photodetector and an output modulator configured to modulate signal output from the photodetector. Photodetector arrays having a plurality of light detection systems, e.g., as described, are also provided. Methods for matching output signals from two or more photodetectors (e.g., a plurality of photomultiplier tubes in a photodetector array) are also described. Flow cytometer systems and methods for detecting light from a sample in a flow stream are provided. Aspects further include kits having two or more of the subject light detection systems. 1. A light detection system comprising:a photodetector;an input modulator configured to modulate signal input into the photodetector; andan output modulator configured to modulate signal output from the photodetector.2. The light detection system according to claim 1 , wherein the photodetector comprises a photomultiplier tube.3. The light detection system according to claim 1 , wherein the photodetector comprises a photodiode.4. The light detection system according to claim 3 , wherein the photodiode is an avalanche photodiode.5. The light detection system according to claim 1 , wherein the photodetector comprises a photocathode and an avalanche photodiode.6. The light detection system according to claim 1 , wherein the input modulator comprises an amplifier.7. The light detection system according to claim 6 , wherein the amplifier is a transimpedance amplifier.8. The light detection system according to claim 1 , wherein the input modulator comprises an array of resistors.9. The light detection system according to claim 1 , wherein the input modulator comprises an array of resistors and capacitors.10. The light detection system according to claim 1 , wherein the input modulator is configured to increase the current of the ...

LIGHT-TO-FREQUENCY CONVERTER ARRANGEMENT AND METHOD FOR LIGHT-TO-FREQUENCY CONVERSION

A method for light-to-frequency conversion comprises generating a photocurrent by means of a photodiode and converting the photocurrent into a digital comparator output signal in a charge balancing operation depending on a first clock signal. From the digital comparator output signal an asynchronous count is determined and comprises an integer number of counts depending on the first clock signal. From the digital comparator output signal a fractional time count is determined and depends on a second clock signal. Finally, from the asynchronous count and from the fractional time count a digital output signal is calculated which is indicative of the photocurrent generated by the photodiode. The method may be carried out by an exemplary light-to-frequency converter equipped with a photodiode. 1. A method for light-to-frequency conversion , comprising the steps of:generating a photocurrent by means of a photodiode,converting the photocurrent into a digital comparator output signal in a charge balancing operation depending on a first clock signal,determining from the digital comparator output signal an asynchronous count comprising an integer number of counts depending on the first clock signal,determining from the digital comparator output signal a fractional time count depending on a second clock signal, andcalculating from the asynchronous count and from the fractional time count a digital output signal which is indicative of the photocurrent generated by the photodiode.2. The method according to claim 1 , whereinthe photocurrent is integrated into one or more reference charge packages during an integration time, wherein a detection of a charge package determines an integration cycle,the first clock signal is used to count a number of reference charge packages during the integration time, andthe asynchronous count is determined from the number of charge packages.3. The method according to claim 1 , wherein a time period of an integration cycle is determined from the ...

FLEXIBLE AND STRETCHABLE OPTICAL INTERCONNECT IN WEARABLE SYSTEMS

Various embodiments disclosed relate to a stretchable packaging system. The system includes a first electronic component. The first electronic component includes a first optical emitter. The system further includes a second electronic component. The second electronic component includes a first receiver. An optical interconnect including a first elastomer having a first refractive index connects the first optical emitter to the first receiver. An encapsulate layer including a second elastomer having a second refractive index at least partially encapsulates the first electronic component, the second electronic component, and the optical interconnect. 1. A stretchable packaging system , comprising:a first electronic component comprising a first optical emitter;a second electronic component comprising a first receiver;an optical interconnect comprising a first elastomer having a first refractive index and connecting the first optical emitter to the first receiver; andan encapsulant layer comprising a second elastomer having a second refractive index and at least partially encapsulating the first electronic component, the second electronic component, and the optical interconnect.2. The stretchable packaging system of claim 1 , wherein the first optical emitter is chosen from a light-emitting diode or a laser diode.3. The stretchable packaging system of claim 1 , wherein at least one of the first and second electronic components are is chosen from a chip claim 1 , a circuit board claim 1 , a processor claim 1 , and a memory.4. The stretchable packaging system of claim 1 , wherein the first receiver is a photodiode receptor.5. The stretchable packaging system of claim 1 , wherein the first and second elastomers are chosen from a thermoplastic polyurethane claim 1 , a butyl rubber claim 1 , a poly-dimethyl siloxane claim 1 , a latex claim 1 , or mixtures thereof.6. The stretchable packaging system of claim 1 , wherein a refractive index value of the first elastomer ranges ...

LIGHT RECEIVING DEVICE, METHOD FOR FABRICATING LIGHT RECEIVING DEVICE

A method for fabricating a light receiving device includes: preparing a first substrate product which includes a semiconductor region having a common semiconductor layer, a first semiconductor laminate for a photodiode, a second semiconductor laminate for a waveguide, and a butt-joint between the first semiconductor laminate and the second semiconductor laminate, the first laminate and the second semiconductor laminate being disposed on the common semiconductor layer; etching the first substrate product with a first mask to form a second substrate product having a photodiode mesa structure produced from the first semiconductor laminate and a preliminary mesa structure produced from the second semiconductor laminate; etching the second substrate product with the first mask and a second mask, formed on the photodiode mesa structure; to produce a waveguide mesa structure from the preliminary mesa structure, and the waveguide mesa structure having a height larger than that of the preliminary mesa structure. 1. A method for fabricating a light receiving device comprising:preparing a first substrate product including a semiconductor base and a semiconductor region on the semiconductor base, the semiconductor region having a common semiconductor layer, a first semiconductor laminate for a photodiode structure, a second semiconductor laminate for a waveguide structure, and a butt-joint between the first semiconductor laminate and the second semiconductor laminate, and the first semiconductor laminate and the second semiconductor laminate being disposed on the common semiconductor layer;forming a first mask on the first substrate product, the first mask having a pattern on the first semiconductor laminate and the second semiconductor laminate, and the pattern of the first mask extending across the butt-joint;etching the first substrate product with the first mask and an etching gas to form a second substrate product, the second substrate product having a photodiode mesa ...

IMAGE SENSOR INCLUDING PHOTODIODE ARRAY

A sensor has plurality of pixels arranged in a plurality of rows and columns with row control circuitry for controlling which one of said rows is activated and column control circuitry for controlling which of said pixels in said activated row is to be activated. The column circuitry has memory configured to store information indication as to which of the pixels are defective, wherein each of the pixels has a photodiode and a plurality of transistors which control the activation of the photodiode. A first transistor is configured to be controlled by a column enable signal while a second transistor is configured to be controlled by a row select signal. 1. A sensor , comprising: a photodiode;', 'a first transistor coupled to the photodiode and configured to receive a column enable signal; and', 'a second transistor coupled to the photodiode and configured to receive a column disable signal., 'a plurality of pixels arranged in a plurality of rows and columns, each pixel including2. The sensor of claim 1 , wherein each pixel includes a third transistor coupled in series with the first transistor and configured to receive a reset signal.3. The sensor of claim 2 , wherein each pixel includes a fourth transistor coupled in parallel with the second transistor and configured to receive a row disable signal.4. The sensor of claim 4 , wherein each pixel includes a buffer having:an input coupled to the photodiode; andan output.5. The sensor of claim 4 , wherein each buffer includes:a first inverter having an input corresponding to the input of the buffer; anda second inverter coupled in series with the first inverter and having an output corresponding to the output of the buffer.6. The sensor of claim 4 , comprising a plurality of pixel output circuits each coupled to the output of the buffer of two or more pixels.7. The sensor of claim 6 , wherein each pixel output circuit includes a multiplexer having:a plurality of inputs each coupled to the output of the buffer of a ...

LOW OPEN AREA AND COUPON ENDPOINT DETECTION

The disclosure describes apparatus and method for detecting an endpoint in plasma-assisted wafer processing in a chamber. A fiber array comprising a plurality of fibers collects optical emission light from the chamber during the plasma-assisted wafer processing. The fiber array is split into two or more groups of fibers, each group carrying a portion of the light to a segment of a photodetector. Each segment of photodetector has a corresponding narrowband optical filter designed for a specific range of wavelengths. A computer processor analyzes detected signals from the plurality of segments of the photodetector, and determines, based on the analysis of the detected signals, an endpoint of the plasma-assisted wafer processing as indicated by the presence or the absence of the one or more chemical species in the chamber. The photodetector can be based on photomultiplier tube (PMT) array or based on photodiodes (e.g., avalanche photodiodes (APDs)). 1. An apparatus for detecting an endpoint in plasma-assisted wafer processing in a chamber , the apparatus comprising:a fiber array comprising a plurality of fibers collecting optical emission light from the chamber during the plasma-assisted wafer processing, wherein the plurality of fibers is split into two or more groups of fibers, each group of fibers carrying a portion of the optical emission light as a respective optical signal;a photodetector having a plurality of segments, each segment having a corresponding narrowband optical filter designed for a specific range of wavelengths, wherein one or more ranges of wavelengths are indicative of a presence or an absence of one or more chemical species associated with the plasma-assisted wafer-processing in the chamber, and wherein each group of fibers couples the respective optical signal with a corresponding segment of the photodetector; anda computer processor, that analyzes detected signals from the plurality of segments of the photodetector, and determines, based on the ...

PHOTODETECTOR

In a light detection device the plurality of pad electrodes are arranged on the semiconductor substrate. Each of the plurality of wires is connected to the pad electrode corresponding thereto. A stitch bond of a corresponding wire is formed on each pad electrode. A distance between each pad electrode and a cell corresponding to the pad electrode is smaller than a distance between the pad electrodes connected to mutually different cells of the cells. The plurality of pad electrodes are arranged in a first region and a second region that are spaced apart from each other with a light receiving region interposed therebetween. The pad electrode corresponding to a cell is arranged in the first region. The pad electrode corresponding to a cell is arranged in the second region. 1. A light detection device , comprising:a semiconductor substrate having a light receiving region where a plurality of cells are arranged in a first direction;a plurality of pad electrodes which are arranged on the semiconductor substrate and each of which is electrically connected to the cell corresponding thereto among the plurality of cells; anda plurality of wires each of which is connected to the pad electrode corresponding thereto among the plurality of pad electrodes,wherein a stitch bond of a corresponding wire among the plurality of wires is formed on each of the pad electrodes,a distance between each of the pad electrodes and the cell corresponding to the pad electrode is smaller than a distance between the pad electrodes connected to mutually different cells of the cells,the plurality of pad electrodes are arranged in a first region and a second region that are spaced apart from each other with the light receiving region interposed therebetween in a second direction crossing the first direction,the plurality of cells include a plurality of cell groups including a first cell and a second cell adjacent to each other,the pad electrode corresponding to the first cell is arranged in the first ...

DETERMINATION METHOD AND LIGHT DETECTION DEVICE

A determination method determines a difference voltage between a breakdown voltage and a bias voltage. A temperature compensation unit provides temperature compensation for the gain of the APD by controlling the bias voltage based on the difference voltage. The bias voltage is “V”, and the gain of the APD to which the bias voltage is applied is “M”. The slope and intercept of the regression line having “(1/M)×(dM/dV)” as an objective variable and “M” as an explanatory variable in data indicating the correlation between the bias voltage and the gain are obtained. “ΔV” calculated by substituting the slope into “a” in the Equation (1), substituting the intercept into “b” in the Equation (1), and substituting a gain to be set in an avalanche photodiode of a light detection device into “M” in the Equation (1) is determined as the difference voltage. 2. The determination method according to claim 1 ,{'sub': 'd', 'wherein a plurality of “ΔV” calculated by substituting, into “M” in the Equation (1), a plurality of different values as gains to be set in the avalanche photodiode are determined as the difference voltage corresponding to each of the plurality of values.'}4. The light detection device according to claim 3 , further comprising:a setting unit configured to set the temperature compensation unit according to the gain to be set in the avalanche photodiode; anda wiring unit electrically connecting the temperature compensation unit and the avalanche photodiode to each other,wherein the temperature compensation unit includes a plurality of temperature compensation diodes having mutually different breakdown voltages,the wiring unit is configured to apply a voltage corresponding to the breakdown voltage of each of the temperature compensation diodes to the avalanche photodiode as a bias voltage, and{'sub': 'd', 'the setting unit is configured to set a temperature compensation diode to be used for controlling the bias voltage among the plurality of temperature compensation ...

Optical sensor and method of operating an optical sensor

An optical sensor includes at least one photodetector configured to be reverse biased at a voltage exceeding a breakdown voltage by an excess bias voltage. At least one control unit is configured to adjust the reverse bias of the at least one photodetector. A method of operating an optical sensor is also disclosed.

METHOD AND APPARATUS FOR MEASURING LIGHT INTENSITY FOR IMAGING

A method of measuring light intensity for imaging using a light detector array comprising a plurality of light detectors arranged to generate an output corresponding to an intensity of incident light. In a first measurement mode the light detector array generates a first plurality of output signals, each generated by one group of proximate light detectors, each group comprising a light detector pair, the first plurality of output signals each corresponding to a difference between the light intensity detected by the light detectors of the group, and generating a light intensity measurement for each group from each received output signal of the first plurality of output signals. In a second measurement mode the light detector array generates a second plurality of output signals, and a light intensity measurement is generated for each light detector from the second plurality of output signals. 1. A method of measuring light intensity for imaging using a light detector array comprising a plurality of light detectors , each light detector of the plurality of light detectors arranged to generate an output corresponding to an intensity of incident light , said method comprising , in a first measurement mode:controlling the light detector array to generate a first plurality of output signals, each output signal of the first plurality of output signals generated by one of a plurality of groups of proximate light detectors of the light detector array, each group of proximate light detectors comprising a first light detector and second light detector forming a light detector pair, each output signal of the first plurality of output signals corresponding to a difference between the light intensity detected by the light detectors of the group of proximate light detectors, andgenerating a light intensity measurement for each group from each received output signal of the first plurality of output signals,the method further comprising, in a second measurement mode:controlling the ...

Optical system for collecting distance information within a field

Optical systems and methods for collecting distance information are disclosed. An example optical system includes a first transmitting optic, a plurality of illumination sources, a pixel array comprising at least a first column of pixels and a second column of pixels, each pixel in the first column of pixels being offset from an adjacent pixel in the first column of pixels by a first pixel pitch, the second column of pixels being horizontally offset from the first column of pixels by the first pixel pitch, the second column of pixels being vertically offset from the first column of pixels by a first vertical pitch; and a set of input channels interposed between the first transmitting optic and the pixel array.

DEVICE FOR MEASURING A DISTANCE AND METHOD FOR MEASURING SAID DISTANCE

Measuring device () suited to measure the distance (d) of a reference object (O), configured so that it performs a plurality of measuring operations (A) in succession and comprising emission means () suited to emit a light radiation (R), receiving means () comprising a sensitive area () which is sensitive to the light radiation (R) and which is provided with a number M of sensitive units (), each one of the sensitive units () being configured to generate an electrical signal (S), a first processing unit () comprising Nprocessing elements (), each one of said Nprocessing elements () being configured to receive the electrical signal (S) for determining the time of impact (t) of a photon (F) on the sensitive units () and for calculating the value of said distance (d). The measuring device () comprises a second processing unit () configured to receive the electrical signals (S), processing the electrical signals (S) in such a way as to select a number Nof sensitive units () impacted by the photons (F), associating each one of the Nsensitive units () to one of the Nprocessing elements (), in such a way that, at the moment of the successive measuring operation (A), the distance (d) is determined by each one of the Nsensitive units () selected. 212. Device () according to claim 1 , characterized in that said emission means () emit light radiation (R) of the type pulsed with a predefined number X of pulses (B) for each time interval (I) related to each one of said measuring operations (A).3174. Device () according to claim 1 , characterized in that said second processing unit () is configured in such a way that claim 1 , at the moment of each one of said measuring operations (A) claim 1 , said step of processing said electrical signals (S) consists in the calculation of the number of occurrences related to the impact of at least one photon (F) belonging to said light radiation (R) for each one of said M sensitive units () during said pre-established time interval (I).4174. ...

PHOTODETECTOR AND METHOD FOR MANUFACTURING PHOTODETECTOR

In a light detection device, the semiconductor substrate forms an APD and a temperature compensation diode so as to be spaced apart from each other. The semiconductor substrate includes a peripheral carrier absorbing portion configured to absorb carriers located at the periphery, between the APD and the temperature compensation diode when viewed from the direction perpendicular to the main surface. When viewed from the direction perpendicular to the main surface, on a line segment connecting the APD and the temperature compensation diode at the shortest distance, the shortest distance between the APD and the peripheral carrier absorbing portion is smaller than the shortest distance between the temperature compensation diode and a portion, which is closest to the APD, of edges of the peripheral carrier absorbing portion. 1. A light detection device , comprising:a semiconductor substrate that has a first main surface and a second main surface facing each other and forms an avalanche photodiode and a temperature compensation diode so as to be spaced apart from each other when viewed from a direction perpendicular to the first main surface,wherein the semiconductor substrate includes a peripheral carrier absorbing portion configured to absorb carriers located at a periphery, the peripheral carrier absorbing portion being between the avalanche photodiode and the temperature compensation diode when viewed from the direction perpendicular to the first main surface,when viewed from the direction perpendicular to the first main surface, on a line segment connecting the avalanche photodiode and the temperature compensation diode to each other at a shortest distance, a shortest distance between the avalanche photodiode and the peripheral carrier absorbing portion is smaller than a shortest distance between the temperature compensation diode and a portion, which is closest to the avalanche photodiode, of an edge of the peripheral carrier absorbing portion, anda voltage ...

System and method for low noise electromagnetic radiation measurement enabling to measure weak signals

A system and method for low noise electromagnetic radiation measurement enabling to measure weak signals is provided. The electromagnetic radiation measurement system is configured for detecting weak electromagnetic radiation input signals overcoming the quantum limit. The electromagnetic radiation|measurement system includes at least one or more first 50/50 power splitter receiving the input signal; two or more identical balanced heterodyne receivers; two or more LNAs; one or more local oscillator (LO), one or more optical isolator; one or more second 50/50 power splitter; a digital correlator; and a computer or a similar computational device.

GENERATION AND DETECTION OF TERAHERTZ RADIATION WITH AN ARBITRARY POLARIZATION DIRECTION

A photoconductive switch for generating or detecting terahertz radiation (TR) is provided. The photoconductive switch may comprise at least a first and a second pair of electrodes (E, E, E) on a surface (SS) of a photoconductive substrate, wherein the electrodes of the first pair are separated by a first gap comprising at least a plurality of first rectilinear sections (G) extending along a first direction (x) and the electrodes of the second pairs are separated by a second gap comprising at least a plurality of second sections (G) extending along a second direction (y), different from the first direction. The photoconductive switch may further comprise a patterned opaque layer (PML) selectively masking portions of the gaps between the electrodes. Methods and devices for generating and detecting terahertz radiation comprising such photoconductive switches are also provided. 1. A photoconductive switch for generating or detecting terahertz radiation (TR) comprising:a photoconductive substrate (SUB); and wherein said plurality of electrodes comprises:', {'sub': 10', 'GR', 'V, 'a first pair of structured electrodes (E, E) separated by a first gap comprising at least a plurality of first rectilinear sections (G) extending along a first direction (x); and'}, {'sub': 20', 'GR', 'H, 'a second pair of structured electrodes (E, E) separated by a second gap comprising at least a plurality of second rectilinear sections (G) extending along a second direction (y), different from the first direction;'}], 'a plurality of electrodes on a surface (SS) of the photoconductive substrate'} first rectilinear sections of the first gap such that, upon application of a first voltage between the electrodes of the first pair and illumination by said visible or infrared radiation, a first electric current flows with a same direction and orientation across all said first rectilinear sections; and', 'second rectilinear sections of the second gap such that, upon application of a second voltage ...

Time-To-Digital Converter Circuit and Method for Single-Photon Avalanche Diode Based Depth Sensing

A self-calibration time-to-digital converter (TDC) integrated circuit for single-photon avalanche diode (SPAD) based depth sensing is disclosed. The circuit includes a SPAD matrix with a plurality of SPAD pixels arranged in m rows and n columns, the SPAD pixels in each column of SPAD pixels are connected by a column bus; a global DLL unit with n buffers and n clock signals; and an image signal processing unit for receiving image signals from the column TDC array. The circuit can also include a row control unit configured to enable one SPAD pixel in each row for a transmitting signal; a circular n-way multiplexer for circularly multiplexing n clock signals in the global DLL unit; a column TDC array with n TDCs, each TDC further comprises a counter and a latch, the latch of each TDC is connected to the circular n-way multiplexer for circular multiplexing. 1. A self-calibration time-to-digital converter (TDC) integrated circuit for single-photon avalanche diode (SPAD) based depth sensing , the circuit comprising:a SPAD matrix with a plurality of SPAD pixels arranged in m rows and n columns, wherein the SPAD pixels in each column of SPAD pixels are connected by a column bus;a global delay-locked loop (DLL) unit with n buffers and n clock signals; andan image signal processing unit for receiving image signals from the column TDC array.2. The circuit of claim 1 , wherein the circuit further comprises:a row control unit configured to enable one SPAD pixel in each row for a transmitting signal.3. The circuit of claim 2 , wherein the circuit further comprises:a circular n-way multiplexer for circularly multiplexing n clock signals in the global DLL unit.4. The circuit of claim 3 , wherein the circuit further comprises:a column TDC array with n TDCs, wherein each TDC further comprises a counter and a latch, wherein the latch of each TDC is connected to the circular n-way multiplexer for circular multiplexing.5. The circuit of claim 4 , wherein the SPAD matrix is implemented ...

LIGHT RECEIVING DEVICE

A light receiving device that receives a light signal includes: a plurality of avalanche photodiodes, in each of which receiving sensitivity is set in accordance with a bias signal that is provided; a plurality of level conversion units provided in association with the avalanche photodiodes, each of the level conversion units being configured to convert a level of a reference voltage for obtaining the bias signal so as to generate the bias signal and being configured to provide the bias signal to corresponding one of the avalanche photodiodes; and a control unit that generates a first control signal corresponding to a temperature of the light receiving device, and controls a level conversion amount of each of the level conversion units by using the first control signal. 12-. (canceled)3. A light receiving device that receives a light signal , the light receiving device comprising:a plurality of avalanche photodiodes, in each of which receiving sensitivity is set in accordance with a bias signal provided; being configured to convert a level of a reference voltage for obtaining the bias signal so as to generate the bias signal and', 'being configured to provide the bias signal to a corresponding one of the avalanche photodiodes; and, 'a plurality of level conversion units provided in association with the avalanche photodiodes, each of the level conversion units'} to generate a first control signal corresponding to a temperature of the light receiving device, and', 'to control a level conversion amount of each of the level conversion units by using the first control signal; and, 'a control unit'} to boost a power supply voltage so as to generate the reference voltage, and', 'to provide the reference voltage to the level conversion units, wherein, 'a booster unit'}each of the level conversion units converts the level of the reference voltage on the basis of the first control signal so as to generate the bias signal,the booster unit generates the reference voltage by ...

CIRCUIT ARCHITECTURE FOR MODE SWITCH

Present disclosure relates to a current detection module capable of differentiating and quantifying contribution to a current signal generated by a sensor in response to stimulation by a certain target source from contributions from sources other than the target source (ambient sources). As long as the contribution from the target source comprises a pulsed signal, the module synchronizes itself to the pulse(s) so that there is a predetermined phase relationship between the pulse(s) and functions carried out by various stages of the module. The module may be re-used to also detect and quantify contributions from ambient sources by presenting these contributions to the module as pulses that trigger synchronization of the module. To that end, a detection system disclosed herein is based on the use of such current detection module and allows mode switching where, depending on the selected mode of operation, the module is configured to perform different measurements. 1. A detection system comprising:a sensor configured to generate a current signal, the current signal comprising at least a first portion comprising a contribution from a target source and/or a second portion comprising a contribution from one or more sources other than the target source;a current detection module configured to receive the current signal generated by the sensor and generate a digital value indicative of the first portion of the current signal and/or a digital value indicative of the second portion of the current signal; and in the first mode, the current detection module is configured to generate the digital value indicative of the first portion,', 'in the second mode, the current detection module is configured to generate the digital value indicative of at least the second portion when the contribution from the one or more sources other than the target source is in a first range of values, and', 'in the third mode, the current detection module is configured to generate the digital value ...

Non-Invasive Measurement Systems with Single-Photon Counting Camera

An exemplary non-invasive measurement system includes a single-photon counting camera and a processor. The single-photon counting camera includes an array of SPAD detectors configured to detect, during a sequence of gated time intervals, coherent continuous light that exits a body after the light enters and scatters within the body, and output a plurality of electronic signals representative of the detected light. The processor is configured to generate, based on the electronic signals, a sequence of speckle pattern image frames corresponding to the gated time intervals. Other exemplary non-invasive measurement systems are also described. 1. A non-invasive measurement system comprising: detect, during a sequence of gated time intervals, coherent continuous light that exits a body after the light enters and scatters within the body, and', 'output a plurality of electronic signals representative of the detected light; and, 'a single-photon counting camera including an array of single-photon avalanche diode (SPAD) detectors configured to'}a processor coupled to an output of the single-photon counting camera and configured to generate, based on the electronic signals, a sequence of speckle pattern image frames corresponding to the gated time intervals.2. The non-invasive measurement system of claim 1 , wherein the processor is further configured to generate claim 1 , based on the sequence of speckle pattern image frames claim 1 , a correlation map representative of speckle decorrelation associated with the light.3. The non-invasive measurement system of claim 2 , wherein:each of the speckle pattern image frames includes K times L digital sample values at K by L pixel locations that correspond to locations of the SPAD detectors; and applying a plurality of correlation measurement operations to the sample values in each of the speckle pattern image frames,', 'generating, based on the application of the measurement operations to the sample values in each of the speckle ...

BIOSENSOR AND BIO DETECTION SYSTEM

A biosensor is provided. The biosensor includes a substrate, a plurality of photodiodes, a polarizing element and a plurality of reaction sites. The plurality of photodiodes are embedded in the substrate. The polarizing element is disposed on the substrate. The plurality of reaction sites are disposed on the polarizing element. 1. A biosensor , comprising:a substrate;a plurality of photodiodes embedded in the substrate;a polarizing element disposed on the substrate; anda plurality of reaction sites disposed on the polarizing element.2. The biosensor as claimed in claim 1 , further comprising:a filter layer disposed between the substrate and the polarizing element.3. The biosensor as claimed in claim 1 , further comprising:a filter layer disposed between the substrate and the plurality of reaction sites, wherein the polarizing element is embedded in the filter layer.4. The biosensor as claimed in claim 1 , wherein each of the plurality of the reaction sites corresponds to one of the plurality of the photodiodes.5. The biosensor as claimed in claim 2 , wherein the filter layer comprises two sub-filter layers claim 2 , and each of the plurality of the reaction sites corresponds to two of the plurality of the photodiodes.6. The biosensor as claimed in claim 2 , wherein the filter layer comprises four sub-filter layers claim 2 , and each of the plurality of the reaction sites corresponds to four of the plurality of the photodiodes.7. The biosensor as claimed in claim 2 , wherein the filter layer comprises two sub-filter layers claim 2 , the polarizing element comprises two sub-polarizing layer claim 2 , and each of the plurality of the reaction sites corresponds to two of the plurality of the photodiodes.8. The biosensor as claimed in claim 2 , wherein the filter layer comprises four sub-filter layers claim 2 , the polarizing element comprises two sub-polarizing layer claim 2 , and each of the plurality of the reaction sites corresponds to four of the plurality of the ...

Light detection device

A semiconductor substrate includes a first region in which a plurality of pixels are disposed and a second region located inside the first region to be surrounded by the first region when viewed from a direction in which a principal surface and a principal surface oppose each other. A through-hole penetrating through the semiconductor substrate is formed in the second region of the semiconductor substrate. An electrode disposed on a side of the principal surface of the semiconductor substrate and electrically connected to the plurality of pixels and an electrode disposed on a side of a principal surface of a mount substrate are connected to each other via a bonding wire inserted through the through-hole.

DETECTION CIRCUIT FOR LASER FAULT INJECTION ATTACK ON CHIP AND SECURITY CHIP

Embodiments of the present disclosure provide a detection circuit for a laser fault injection attack on a chip and a security chip. The detection circuit includes a first capacitor, a second capacitor, a first switch, a second switch, a photosensitive element, a first NMOS transistor, and a second NMOS transistor. A drain of the first NMOS transistor is configured to output a first voltage signal, and a drain of the second NMOS transistor is configured to output a second voltage signal. The first voltage signal and the second voltage signal are configured to indicate that the chip is attacked by laser fault injection, thereby realizing detection of the laser fault injection attack, and ensuring the robustness and security of the chips. 1. A detection circuit for a laser fault injection attack on a chip , being disposed in the chip and comprising:a first capacitor;a second capacitor;a first switch, wherein the first switch comprises a control terminal configured to receive a first clock signal for controlling a turning-on state and a turning-off state of the first switch, a first terminal connected to a supply voltage, and a second terminal grounded through the first capacitor;a second switch, wherein the second switch comprises a control terminal configured to receive a second clock signal for controlling a turning-on state and a turning-off state of the second switch, a first terminal connected to the supply voltage, and a second terminal grounded through the second capacitor;a photosensitive element;a first NMOS transistor, wherein the first NMOS transistor comprises a drain connected to the second terminal of the first switch and configured to output a first voltage signal, a source connected to the photosensitive element, and a gate connected to the second terminal of the second switch; anda second NMOS transistor, wherein the second NMOS transistor comprises a drain connected to the second terminal of the second switch and configured to output a second voltage ...

ULTRA-LOW POWER, MINIATURIZED ELECTRONIC SYSTEMS FOR MONITORING PHYSICAL PARAMETERS WITH WIRELESS COMMUNICATION CAPABILITIES AND APPLICATIONS OF SAME

An electronic system for monitoring a physical parameter includes an ADM comprising an accumulation mode sensor for measuring the physical parameter by generating electrical energy associated with the physical parameter in response to a surrounding condition, and an energy storing device coupled to the accumulation mode sensor for accumulatively storing the generated electrical energy; a power source; and an SoC coupling with the ADM and the power source, configured such that the stored electrical energy is monitored, and when the stored electrical energy is equal to or greater than a pre-defined threshold, a wake-up event is generated to trigger the SoC to operates in a run mode in which the physical parameter is wirelessly transmitted to a receiver and the stored electrical energy in the energy storing device is discharged, and then the SoC returns to a sleep mode in which a minimal power is consumed. 1. An electronic system for monitoring a physical parameter , comprising:an accumulation detection module (ADM) for continuously measuring the physical parameter in terms of exposure dose in an accumulation mode, wherein the ADM is a light-powered sensing system comprising at least one photodiode (PD) for continuously generating photocurrent with a magnitude that is proportional to an intensity of electromagnetic radiation in response to exposure to the electromagnetic radiation (EMR), at least one capacitor coupled to the at least one PD in parallel for storing charges accumulated from the generated photocurrent of the at least one PD, and at least one transistor having a source and a drain coupled to the at least one capacitor;a power source for operably providing power; anda system on a chip (SoC) coupling with the ADM and the power source and operably in a sleep mode in which a minimal power is consumed, or in a run mode, wherein the SoC comprises a wireless communication module, at least one analog-to-digital converter (ADC) and a low-power comparator (LPCOMP) ...

CHARGE COLLECTION GATE WITH CENTRAL COLLECTION PHOTODIODE IN TIME OF FLIGHT PIXEL

A pixel circuit includes a photodiode disposed in a semiconductor material layer to accumulate image charge in response to light incident upon the photodiode. A charge collection gate is coupled to the photodiode. The charge collection gate is disposed over the photodiode to generate an inversion layer in the semiconductor material layer under the charge collection gate to collect the image charge from the photodiode. A first transfer gate is disposed proximate to the charge collection gate, wherein the first transfer gate is coupled to transfer the image charge from in the inversion layer in response to a first transfer signal. 1. A pixel circuit , comprising:a photodiode disposed in a semiconductor material layer to accumulate image charge in response to light incident upon the photodiode;a charge collection gate coupled to the photodiode, wherein the charge collection gate is disposed over the photodiode to generate an inversion layer in the semiconductor material layer under the charge collection gate to collect the image charge from the photodiode; anda first transfer gate disposed proximate to the charge collection gate, wherein the first transfer gate is coupled to transfer the image charge from in the inversion layer in response to a first transfer signal.2. The pixel circuit of claim 1 , wherein the charge collection gate is coupled to be biased with a constant bias voltage to collect the image charge from the photodiode into the inversion layer.3. The pixel circuit of claim 1 , further comprising a second transfer gate disposed proximate to the charge collection gate claim 1 , wherein the second transfer gate is coupled to transfer the image charge from the inversion layer in response to a second transfer signal claim 1 , wherein the first transfer signal and the second transfer signal comprise oscillating pulse trains that are out of phase with one another during an integration period of the pixel circuit to alternatingly transfer the image charge from ...

Light Receiver with Avalanche Photo Diodes in a Geiger Mode

A light receiver () having a plurality of avalanche photo diode elements ( -) which are biased with a bias voltage greater than a breakthrough voltage and are thus operated in a Geiger mode in order to trigger a Geiger current upon light reception, and having a signal detection circuit () for reading out the avalanche photo diode elements (-), wherein the signal detection circuit () comprises an active coupling element () having an input () connected to the avalanche photo diode elements (-) and an output (), the active coupling element () mapping the Geiger current at the input () to a measuring current corresponding to the Geiger current in its course and level, wherein the input () forms a virtual short-circuit for the Geiger current with respect to a potential (ground, −U; U−U), and the output () is decoupled from the input (). 1105010125010125052541012565254545654acacac. A light receiver ( , ) having a plurality of avalanche photo diode elements ( , -) which are biased with a bias voltage greater than a breakthrough voltage and are thus operated in a Geiger mode in order to trigger a Geiger current upon light reception , and having a signal detection circuit () for reading out the avalanche photo diode elements ( , -) , wherein the signal detection circuit () comprises an active coupling element () having an input () connected to the avalanche photo diode elements ( , -) and an output () , the active coupling element () mapping the Geiger current at the input () to a measuring current corresponding to the Geiger current in its course and level , wherein the input () forms a virtual short-circuit for the Geiger current with respect to a potential (ground , −U; U−U) , and the output () is decoupled from the input ().21050. The light receiver ( claim 1 , ) according to claim 1 ,wherein the course of the measuring current deviates from the Geiger current only for fluctuations in a higher Gigahertz range.31050. The light receiver ( claim 2 , ) according to claim 2 , ...

METHOD FOR IMPROVING THE DYNAMIC RANGE OF A DEVICE FOR DETECTING LIGHT

A method for improving dynamic range of a device for detecting light includes providing at least two detection regions. The detection regions are each formed by an array of a plurality of single-photon avalanche diodes (SPADs) and the detection regions each comprise at least one signal output. A characteristic curve is determined for each of the detection regions. The characteristic curves are combined with one another and/or offset against one another in order to obtain a correction curve and/or a correction factor. 1. A method for improving dynamic range of a device for detecting light , the method comprising:providing at least two detection regions, wherein the detection regions are each formed by an array of a plurality of single-photon avalanche diodes (SPADs) and wherein the detection regions each comprise at least one signal output;determining a characteristic curve for each of the detection regions; andcombining the characteristic curves with one another and/or offsetting the characteristic curves against one another in order to obtain a correction curve and/or a correction factor.2. The method according to claim 1 , further comprising linearizing an overall characteristic curve formed by output signals from the signal outputs based on the correction curve and/or the correction factor.3. The method according to claim 1 , wherein the correction curve and/or the correction factor is determined by dividing the characteristic curves.4. The method according to claim 1 , wherein output signals are corrected claim 1 , after actual detection of the light claim 1 , by digital signal processing.5. The method according to claim 1 , wherein the characteristic curves of the detection regions are determined once by a calibration measurement.6. The method according to claim 1 , wherein the light to be detected impinges on the detection regions at different intensities and/or with different spectral ranges.7. The method according to claim 1 , further comprising activating ...

PHOTOCHARGE STORAGE ELEMENT AND DEVICES INCLUDING THE SAME

A photocharge storage element includes a gate insulator formed on a gate electrode, a channel formed on the gate insulator between a source electrode and a drain electrode, and an organic photoelectric conversion element formed on the channel. The organic photoelectric conversion element generates photocharges in response to light. The channel accumulates the photocharges generated by the organic photoelectric conversion element. The photocharges accumulated in the channel are read out from the channel in response to a voltage between the source electrode and the drain electrode. 1. A photocharge storage element comprising:a semiconductor substrate;a gate electrode disposed on the semiconductor substrate;a gate insulator disposed on the gate electrode;a source electrode disposed on the gate insulator;a drain electrode disposed on the gate insulator;a channel disposed on the gate insulator, and disposed between the source electrode and the drain electrode; andan organic photoelectric conversion element disposed on the channel, and configured to generate photocharges in response to light.2. The photocharge storage element of claim 1 , wherein the channel is configured to accumulate the photocharges.3. The photocharge storage element of claim 2 , wherein the photocharges accumulated in the channel are read out from the channel in response to a voltage between the source electrode and the drain electrode.4. The photocharge storage element of claim 2 , wherein the photocharges accumulated in the channel are read out from the channel in response to a difference between a voltage applied to one electrode among the source electrode and the drain electrode and a voltage applied to the gate electrode.5. The photocharge storage element of claim 1 , wherein if the channel is formed of an N-type material claim 1 , a conduction band of the channel is higher than that of the organic photoelectric conversion element claim 1 , and a valence band of the channel is higher than that of ...

ARRAY OF GEIGER-MODE AVALANCHE PHOTODIODES FOR DETECTING INFRARED RADIATION

An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external dielectric region arranged on the internal dielectric structure. The external dielectric region is formed by an external material that absorbs radiation having a wavelength that falls in a stop-band with low wavelength and transmits radiation having a wavelength that falls in a pass-band with high wavelength, at least part of the pass-band including wavelengths in the infrared. The internal dielectric structure is formed by one or more internal materials that substantially transmit radiation having a wavelength that falls in the stop-band and in the pass-band and have refractive indices that fall in an interval having an amplitude of 0.4. In the stop-band and in the pass-band the external dielectric region has a refractive index with the real part that falls in the above interval. 1. An optoelectronic device , comprising:a first array of Geiger-mode avalanche photodiodes, said first array being formed in a die; anda packaging structure, which includes:an internal dielectric structure arranged on the die, in direct contact therewith, and overlying said photodiodes; and said first external dielectric region is formed by a first material that absorbs radiation having a wavelength that falls in a stop-band with a first wavelength range and transmits radiation having a wavelength that falls in a pass-band with a second wavelength range that is higher than the first wavelength range, at least part of said pass-band including infrared wavelengths;', 'said internal dielectric structure is formed by one or more second materials that substantially transmit radiation having a wavelength that falls in said stop-band and in said pass-band and have refractive indices that fall in an interval having a width of 0.4; and', 'in said stop-band and in said pass-band, said first external dielectric region has a refractive index with a real ...

METHOD FOR NOISE REDUCTION AND A DETECTION CIRCUIT

A method and a detection circuit. The detection circuit may include (a) a photodiode that is configured to convert radiation to a photodiode current; (b) a photodiode bias circuit that is configured to bias the photodiode; (c) a dynamic resistance circuit that has a first terminal and a second terminal; (d) a transimpedance amplifier that is configured to amplify an output current of the dynamic resistance circuit to provide an output voltage, wherein the second terminal is coupled to a negative input port of the amplification circuit; and (e) a conductor that is coupled between the first terminal and an anode of the photodiode. 1. A detection circuit , comprising:a photodiode that is configured to convert radiation to a photodiode current;a photodiode bias circuit that is configured to bias the photodiode;a dynamic resistance circuit that comprises a first terminal and a second terminal;a transimpedance amplifier that is configured to amplify an output current of the dynamic resistance circuit to provide an output voltage; wherein the second terminal is coupled to a negative input port of the amplification circuit; anda conductor that is coupled between the first terminal and an anode of the photodiode.2. The detection circuit according to wherein the output current of the dynamic resistance circuit approximates the photodiode current.3. The detection circuit according to wherein the dynamic resistance circuit comprises an active element that is a diode.4. The detection circuit according to wherein the dynamic resistance circuit comprises an active element that is a bipolar transistor that comprises a base claim 1 , an emitter and a collector claim 1 , wherein the base is coupled to the collector.5. The detection circuit according to wherein the dynamic resistance circuit comprises an active element claim 1 , and a direct current (DC) bias circuit that is configured to set a value of a resistance of the dynamic resistance circuit by flowing a bias DC current ...

PHOTODETECTOR WITH SUPERCONDUCTOR NANOWIRE TRANSISTOR BASED ON INTERLAYER HEAT TRANSFER

The various implementations described herein include methods, devices, and systems for detecting light. In one aspect, a photodetector device includes: a superconducting wire, and a transistor that includes a semiconducting component and a superconducting component. The superconducting wire is electrically coupled to the superconducting component. The semiconducting component is located adjacent to the superconducting component. The superconducting component is configured to, in response to receiving an input current exceeding a current threshold, transition from a superconducting state to a non-superconducting state and generate heat sufficient to increase a temperature of the semiconducting component from a temperature below a semiconducting threshold temperature to a temperature above the semiconducting threshold temperature. 1. A photodetector device , comprising: a first wire including a semiconducting component configured to operate in an on state at temperatures above a semiconducting threshold temperature; and', a temperature of the superconducting component is below a superconducting threshold temperature; and', 'current supplied to the superconducting component is below a current threshold;, 'a second wire including a superconducting component adjacent to the semiconducting component and configured to operate in a superconducting state while], 'a transistor that includesa current source coupled to the transistor and configured to provide a bias current that is below the current threshold to the superconducting component; anda superconducting wire electrically coupled to the second wire and configured to convey an additional current to the superconducting component, wherein a combination of the bias current and the additional current comprises an input current; the superconducting component is configured to, in response to the input current exceeding the current threshold, transition to a non-superconducting state and generate heat sufficient to increase a ...

OPTICAL RECEIVER MODULE

An optical receiver module including: two amplifier arrays in each of which transimpedance amplifiers and first capacitors are arranged in an alternating manner, and an optical detector array, located between the two amplifier arrays, in which a plurality of optical detectors are aligned, wherein the plurality of optical detectors are coupled in an alternating manner to one of the transimpedance amplifiers of one of the two amplifier arrays and to one of the transimpedance amplifiers of the other of the two amplifier arrays, and for each specified optical detector of the plurality of optical detectors, the specified optical detector is coupled to one of the first capacitors of a second amplifier array of the two amplifier arrays, the second amplifier array being different from a first amplifier array that includes one of the transimpedance amplifiers to which the specified optical detector is coupled. 1. An optical receiver module comprising:two amplifier arrays in each of which transimpedance amplifiers and first capacitors are arranged in an alternating manner; andan optical detector array, located between the two amplifier arrays, in which a plurality of optical detectors are aligned, whereinthe plurality of optical detectors are coupled in an alternating manner to one of the transimpedance amplifiers of one of the two amplifier arrays and to one of the transimpedance amplifiers of the other of the two amplifier arrays, andfor each specified optical detector of the plurality of optical detectors, the specified optical detector is coupled to one of the first capacitors of a second amplifier array of the two amplifier arrays, the second amplifier array being different from a first amplifier array that includes one of the transimpedance amplifiers to which the specified optical detector is coupled.2. The optical receiver module according to claim 1 , whereineach of the plurality of optical detectors receives each optical signal propagating in each optical ...

Light detection device and electronic apparatus

A light detection device includes a semiconductor substrate, a signal detection light receiving portion that is formed in the semiconductor substrate, an infrared light receiving portion that is formed in the semiconductor substrate, a first color filter that covers the signal detection light receiving portion and that has a first spectral characteristic such that the first color filter passes therethrough light in a first wavelength range within the wavelength range of visible light and in the wavelength range of infrared light, a second color filter that covers the infrared light receiving portion and that has a second spectral characteristic such that the second color filter passes therethrough light in a second wavelength range within the wavelength range of visible light and in the wavelength range of infrared light, a third color filter that covers the infrared light receiving portion and that has a third spectral characteristic such that the third color filter passes therethrough light in a third wavelength range different from the second wavelength range within the wavelength range of visible light and in the wavelength range of infrared light, and an infrared cut filter that covers the signal detection light receiving portion and that has an opening in a region opposite to the infrared light receiving portion.

DEVICE AND METHOD FOR DETECTING LIGHT

A device for detecting light includes a silicon photomultiplier (SiPM) comprising a detection area formed from an array of a plurality of single-photon avalanche diodes (SPADs). An optical system is configured to shape the light such that the detection area is covered as completely as possible with a light beam region of substantially constant intensity. 1: A device for detecting light , the device comprising:at least one silicon photomultiplier (SiPM) comprising a detection area formed from an array of a plurality of single-photon avalanche diodes (SPADs); andat least one optical system configured to shape the light such that the detection area is substantially covered with a light beam region of substantially constant intensity.2: The device as claimed in claim 1 , wherein the optical system is a flat-top optical system.3: The device as claimed in claim 2 , wherein the flat-top optical system is a diffractive optical system claim 2 , a refractive optical system or a reflective optical system.4: The device as claimed in claim 3 , wherein the flat-top optical system comprises a first lens and a second lens claim 3 , wherein the first lens and/or the second lens are aspherical lenses or free-form lenses and wherein the first lens distorts a radial profile of the light and the second lens collimates the light.5: The device as claimed in claim 2 , wherein the flat-top optical system contains a microlens array.6: The device as claimed in claim 3 , wherein at least one lens or microlens of the flat-top optical system comprises an antireflection layer on a lens surface.7: The device as claimed in claim 1 , wherein the optical system contains a pyramidal or polyhedral component formed by a glass or polymer block claim 1 , and a focusing lens.8: The device as claimed in claim 1 , wherein the optical system is configured to shape the light such that the region of substantially constant intensity has a substantially round or rectangular shape.9: The device as claimed in claim ...

CONFIGURABLE OPTICAL TRANSDUCERS USING AN OPTICAL MODULATOR AND ONE OR MORE LENSES

A configurable optical device may include an optical transducer, a multi-lens arrangement, and a controllable optical modulator. The optical transducer is configured to convert light to electrical signals or to convert electrical signals to light. The multi-lens arrangement is positioned to redirect at least some of the light to or from the optical transducer. The controllable optical modulator is provided between the multi-lens arrangement and the optical transducer. The controllable optical modulator is coupled to receive and spatially modulate light to or from the optical transducer. The optical modulator is selectively controllable to steer and/or shape the light to a selected distribution of light from the multi-lens arrangement onto the optical transducer and/or from the optical transducer onto the multi-lens arrangement. 1. An optical device comprising:an optical transducer configured to convert light to electrical signals or to convert electrical signals to light;a multi-lens arrangement positioned to redirect at least some of the light to or from the optical transducer, the multi-lens arrangement being selected from a group consisting of (i) a pair of lenses positioned side-by-side and (ii) an N×M array of lenses in side-by-side contact with one another, wherein N and M are integers greater than or equal to 2; anda controllable optical modulator between the multi-lens arrangement and the optical transducer, the controllable optical modulator being coupled to receive and spatially modulate the light to or from the optical transducer,wherein the optical modulator is selectively controllable to steer and/or shape the light to a selected distribution of light from the multi-lens arrangement onto the optical transducer and/or from the optical transducer onto the multi-lens arrangement.2. The device of claim 1 , wherein the controllable optical modulator comprises an electrowetting optic.3. The device of claim 1 , wherein the multi-lens arrangement is a pair of ...

Photodiode Array Structure for Cross Talk Suppression

There is provided an avalanche photodiode array that includes a plurality of avalanche photodiodes. Each avalanche photodiode in the array includes a stack of active photodiode materials. The stack of active photodiode materials includes a first electrical contact layer, a second electrical contact layer; an absorber material layer and an avalanche material layer each disposed between the first electrical contact layer and the second electrical contact layer; and an optical interface surface to the avalanche photodiode. The optical interface surface consists of an exposed surface of the first electrical contact layer, arranged for incident external radiation to directly enter the first electrical contact layer. Each avalanche photodiode stack of active photodiode materials is laterally isolated from the other avalanche photodiodes in the photodiode array.

RECEIVING CIRCUIT AND OPTICAL RECEIVING CIRCUIT

A receiving circuit includes a first input terminal and a second input terminal, an input circuit that includes a first node, a second node, a first inductor, a second inductor, a first variable resistive element, and a second variable resistive element. The first variable resistive element is electrically connected between the first node and the second input terminal, and the second variable resistive element is electrically connected between the second node and the first input terminal. The receiving circuit further includes a differential amplifier configured to generate a differential voltage signal in accordance with a differential current signal. The receiving circuit still further includes a control circuit configured to perform detection of an amplitude of the differential voltage signal and change a resistance value of the first variable resistive element and a resistance value of the second variable resistive element based on a result of the detection. 1. A receiving circuit comprising:a first input terminal and a second input terminal;an input circuit that includes a first node, a second node, a first inductor, a second inductor, a first variable resistive element, and a second variable resistive element, the first inductor being electrically connected between the first input terminal and the first node, the second inductor being electrically connected between the second input terminal and the second node, the first variable resistive element being electrically connected between the first node and the second input terminal, and the second variable resistive element being electrically connected between the second node and the first input terminal,a differential amplifier configured to generate a differential voltage signal in accordance with a differential current signal, the differential amplifier including a first input node and a second input node, the first input node being electrically connected to the first node, the second input node being ...

Aggregating Non-imaging SPAD Architecture for Full Digital Monolithic, Frame Averaging Receivers

The present disclosure relates to systems and methods that include a monolithic, single-chip receiver. An example system includes a plurality of macropixels, each made up of an array of single photon avalanche diodes (SPADs). The system also includes a plurality of pipelined adders communicatively coupled to a respective portion of the plurality of macropixels. The system additionally includes a controller configured to carry out operations. The operations include during a listening period, receiving, at each pipelined adder of the plurality of pipelined adders, respective photosignals from the respective portion of the plurality of macropixels. The operations also include causing each pipelined adder of the plurality of pipelined adders to provide an output that includes a series of frames that provide an average number of SPADs of the respective portion of the plurality of macropixels that were triggered during a given listening period.

Open-Loop Photodiode Gain Regulation

Apparatus and associated methods relate to an open-loop control circuit (OLCC) configured to determine a photodiode element (PDE) drive voltage as a function of a commanded photodiode gain level and a measured temperature signal. In an illustrative example the OLCC may receive a current temperature of an APD element. The OLCC may, for example, receive a commanded gain for the APD relative to a predetermined reference gain. The OLCC may, for example, retrieve a predetermined efficiency characteristic (PEC) of the APD based on the current temperature. If the temperature corresponds to a substantially non-linear portion of the PEC, the OLCC may, for example, determine the drive voltage as a function of the temperature and the commanded gain based on the PEC. Various embodiments may advantageously provide direct control of output gain of photodiodes over a wide dynamic range of temperature associated with the photodiode.

SILICON PHOTOMULTIPLIER

One embodiment of the disclosure includes an A-D conversion circuit connected to a photodiode for providing a silicon photomultiplier that with enhanced detection accuracy and a time resolution. A current generated upon photon detection by the photodiode partially flows into another photodiode adjacent to the photodiode arranged in parallel via a resistor. At this time, the current is charged into a parasitic capacitance adjacent to the photodiode, and thereafter is discharged. However, the discharged current cannot flow toward an output terminal by the A-D conversion circuit, and also cannot switch the A-D conversion circuit. Consequently, the construction of the disclosure can detect light with no influence of the current discharged from the parasitic capacitance. As a result, the disclosure achieves a silicon photomultiplier with high detection accuracy and a satisfactory time resolution. 1. A silicon photomultiplier with photodiodes for detecting light being arranged in parallel via resistors , the silicon photomultiplier comprising:a supply terminal configured to supply a bias voltage to each of the photodiodes;a diode connection resistor connected to each of the photodiodes in series; anda binarization circuit, the binarization circuit each having an input terminal connected to an intermediate node between the photodiode and the diode connection resistor, whereinan output terminal is connected to an output terminal of the silicon photomultiplier via a converting resistor for converting a voltage change into current signals.2. The silicon photomultiplier according to claim 1 , whereineach of the photodiodes is provided with the diode connection resistor, the binarization circuit, and the converting resistor.3. The silicon photomultiplier according to claim 1 , whereinauxiliary photodiodes are arranged in parallel to the photodiode with the same polarity in a condition where no resistor is provided on both ends of the photodiode.4. The silicon photomultiplier ...

CIRCUIT FOR DETECTING LIGHT PULSES

A light pulse detection circuit for connection to a photodiode, the detection circuit comprising an integration capacitor, discharge means, and comparator means adapted to compare an integration voltage across the terminals of the integration capacitor with a reference voltage threshold in order to produce a light pulse detection signal. The reference voltage threshold is a self-adaptive threshold depending on a level of light background noise. A detection device comprising a photodiode and such a detection circuit. A detection matrix comprising a plurality of such detection devices. 1. A light pulse detection circuit for connection to a photodiode , the detection circuit comprising an integration capacitor adapted to integrate a photo-current produced by the photodiode , discharge means for discharging the integration capacitor , and comparator means adapted to compare an integration voltage (Vint) across the terminals of the integration capacitor with a reference voltage threshold in order to produce a light pulse detection signal , wherein the reference voltage threshold is a self-adaptive threshold depending on a level of light background noise.2. The detection circuit according to claim 1 , wherein the comparator means include a comparator claim 1 , a detection lowpass filter connected to the integration capacitor in order to filter the integration voltage so as to obtain a filtered integration voltage claim 1 , a summing circuit for adding an adjustable voltage threshold to the filtered integration voltage so as to obtain the reference voltage threshold claim 1 , the reference voltage threshold being applied to an inverting input of the comparator claim 1 , and the integration voltage being applied to a non-inverting input of the comparator.3. The detection circuit according to claim 2 , wherein the detection lowpass filter is an RC filter adapted to eliminate high frequency light pulses from the signal Vint.4. The detection circuit according to claim 1 , ...

METHOD FOR CALIBRATING A PHOTODETECTOR

Method for calibrating a photodetector (), the method including the following steps: measuring an afterpulsing probability and/or timing of the photodetector () under different operating conditions defined by values of one or more operating parameters, at least one of which is a single-photon property of an optical signal () incident on the photodetector () when measuring the afterpulsing probability, and recording the measured afterpulsing probability and/or timing in relation to the values of the one or more operating parameters; and photodetector calibrated using this method. 1. A method for calibrating a photodetector , the method comprising the following steps:measuring an afterpulsing probability and/or timing of the photodetector under different operating conditions defined by values of one or more operating parameters, andrecording the measured afterpulsing probability and/or timing in relation to the values of the one or more operating parameters;wherein at least one of the operating parameters is a single-photon property of an optical signal incident on the photodetector when measuring the afterpulsing probability.2. The method according to claim 1 , further comprising:changing the value of the one or more operating parameters between measurements of the afterpulsing probability and/or timing.3. The method according to claim 1 , wherein the single-photon property of the optical signal is a member selected from a group consisting of: the spatial mode claim 1 , or the temporal mode.4. The method according to claim 1 , wherein at least one of the operating parameters is a continuous property of a stream of photons incident on the photodetector when measuring the afterpulsing probability.5. The method according to claim 4 , wherein the continuous property is a member selected from a group consisting of: the intensity claim 4 , the average power claim 4 , the peak power claim 4 , the number of photons per unit time or by measurement time bin claim 4 , the ...

SPAD array with gated histogram construction

A sensing device includes a first array of sensing elements, which output a signal indicative of a time of incidence of a single photon on the sensing element. A second array of processing circuits are coupled respectively to the sensing elements and comprise a gating generator, which variably sets a start time of the gating interval for each sensing element within each acquisition period, and a memory, which records the time of incidence of the single photon on each sensing element in each acquisition period. A controller controls the gating generator during a first sequence of the acquisition periods so as to sweep the gating interval over the acquisition periods and to identify a respective detection window for the sensing element, and during a second sequence of the acquisition periods, to fix the gating interval for each sensing element to coincide with the respective detection window. 1. A sensing device , comprising:a first array of sensing elements, each sensing element configured to output a signal indicative of a time of incidence of a single photon on the sensing element during a certain gating interval in each of a succession acquisition periods; and a gating generator, which is configured to variably set a start time of the gating interval for each sensing element within each acquisition period;', 'a memory, which is coupled to record the time of incidence of the single photon on each sensing element in each acquisition period, responsively to the signal; and', 'a controller, which is configured to control the gating generator during a first sequence of the acquisition periods so as to sweep the gating interval over the acquisition periods and to identify,, 'a second array of processing circuits, which are coupled respectively to the sensing elements and compriseresponsively to the signal from each sensing element during the first sequence of the acquisition periods, a respective detection window for the sensing element, and during a second sequence of ...

PHOTOELECTRIC CONVERSION APPARATUS, PHOTOELECTRIC CONVERSION SYSTEM, AND MOVING BODY

A photoelectric conversion apparatus includes a semiconductor substrate, a plurality of avalanche diodes formed within the semiconductor substrate, the plurality of avalanche diodes including a first avalanche diode and a second avalanche diode, and a trench structure formed between the first avalanche diode and the second avalanche diode in a plan view. Each of the avalanche diodes includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. A contact plug for supplying a potential to the second semiconductor region of the first avalanche diode is formed, and the contact plug is provided at a position where the contact plug overlaps with the trench structure in a plan view. 1. A photoelectric conversion apparatus comprising:a semiconductor substrate including a first surface;a plurality of avalanche diodes formed within the semiconductor substrate, and including a first avalanche diode and a second avalanche diode; anda trench structure formed between the first avalanche diode and the second avalanche diode adjacent to the first avalanche diode in a plan view,wherein each of the plurality of avalanche diodes includes a first semiconductor region of a first conductivity type formed at a first depth with respect to the first surface, and a second semiconductor region of a second conductivity type formed at a second depth with respect to the first surface, the second depth being deeper than the first depth,wherein a contact plug configured to supply a potential to the second semiconductor region of the first avalanche diode is formed on the first surface, andwherein the contact plug is provided at a position where the contact plug overlaps with the trench structure in a plan view.2. The photoelectric conversion apparatus according to claim 1 , wherein the contact plug further supplies a potential to the second semiconductor region of the second avalanche diode.3. The photoelectric conversion ...

PHOTO-CURRENT AMPLIFICATION APPARATUS

A photo-current amplification apparatus is provided. The photo-current amplification apparatus includes a photo-detecting device including: a substrate; an absorption region comprising germanium, the absorption region supported by the substrate and configured to receive an optical signal and to generate a first electrical signal based on the optical signal; an emitter contact region of a conductivity type; and a collector contact region of the conductivity type, wherein at least one of the emitter contact region or the collector contact region is formed outside the absorption region, and wherein a second electrical signal collected by the collector contact region is greater than the first electrical signal generated by the absorption region. 1. A photo-current amplification apparatus , comprising: a substrate;', 'an absorption region comprising germanium, the absorption region supported by the substrate and configured to receive an optical signal and to generate a first electrical signal based on the optical signal;', 'an emitter contact region of a conductivity type; and', 'a collector contact region of the conductivity type,', 'wherein at least one of the emitter contact region or the collector contact region is formed outside the absorption region, and', 'wherein a second electrical signal collected by the collector contact region is greater than the first electrical signal generated by the absorption region., 'a photo-detecting device, comprising2. The photo-current amplification apparatus of claim 1 , wherein the emitter contact region is formed in the substrate.3. The photo-current amplification apparatus of claim 2 , wherein the photo-detecting device further comprises a base region of a conductivity type different from the conductivity type of the emitter contact region claim 2 , wherein a portion of the base region is overlapped with a portion of the emitter contact region.4. The photo-current amplification apparatus of claim 3 , wherein the base region is ...

Detecting high intensity light in photo sensor

Two separate schemes are used for detecting light intensity in low light conditions and high light conditions. In high light conditions, two threshold voltages are set and the time between the crossing of a sensor voltage at the two threshold voltages is measured to determine the light intensity in the high light conditions. In low light conditions, a comparator is used to compare the voltage level of the sensor voltage relative to a reference voltage that increase over time. The time when the reference voltage reaches the sensor voltage level is detected to determine the light intensity in the low light conditions.

LIGHT RECEIVING CIRCUIT AND LIGHT COUPLING DEVICE

A light receiving circuit includes a light receiving element, a first transistor that includes a control terminal which is connected to the light receiving element through a first node, a first terminal and a second terminal, a first load circuit that is connected between a power supply potential and a second node connected to the second terminal, and outputs a voltage signal to a third node, wherein the voltage signal is based on a current signal in the light receiving element, a first feedback resistor that is connected between the first node and the third node, a first limiter circuit that is connected in parallel with the first feedback resistor, and limits an increase of voltage at both ends of the first feedback resistor, and a first circuit that is connected between the second node and the reference potential, includes a second transistor which is diode-connected. 1. A light receiving circuit , comprising:a light receiving element connected to a first node;a first transistor having a control terminal connected to the light receiving element through the first node, a first terminal connected to a first reference potential, and a second terminal connected to a second node;a first load circuit connected between the second node and a first power supply potential that is higher than the first reference potential, the first load circuit configured to output a voltage signal to a third node, the voltage signal corresponding to a current signal generated by the light receiving element;a first feedback resistor connected between the first node and the third node;a first limiter circuit connected in parallel with the first feedback resistor and configured to limit an increase in voltage across the first feedback resistor; anda second transistor that is diode-connected and connected between the second node and the first reference potential.2. The light receiving circuit according to claim 1 , wherein the first limiter circuit includes a third transistor having a control ...

SPHERICAL OCCULTER CORONAGRAPH CUBESAT

The present invention relates to a space-based instrument which provides continuous coronal electron temperature and velocity images, for a predetermined period of time, thereby improving the understanding of coronal evolution and how the solar wind and Coronal Mass Ejection transients evolve from the low solar atmosphere through the heliosphere for an entire solar rotation. Specifically, the present invention relates to using a 6U spherical occulter coronagraph CubeSat, and a relative navigational system (RNS) that controls the position of the spacecraft relative to the occulting sphere. The present invention innovatively deploys a free-flying spherical occulter, and after deployment, the actively controlled CubeSat will provide an inertial formation flying with the spherical occulter and Sun. 1. An occulter coronagraph CubeSat comprising:a spherical occulter;an occulter release mechanism;wherein said spherical occulter is deployed from an occulter guide tube disposed in a body of said occulter coronagraph CubeSat, using said occulter release mechanism.2. The occulter coronagraph CubeSat of claim 1 , wherein said spherical occulter is coated with a black paint material which provides greater than 90% absorption of any scattered light claim 1 , and is a conductive surface which provides forward scatter suppression around said spherical occulter.3. The occulter coronagraph CubeSat of claim 1 , further comprising:a relative navigation system comprising a plurality of photodiodes, including first lateral photodiodes, second lateral photodiodes, full-sun photodiodes, and range photodiodes, said plurality of photodiodes which sense a translation and range of said spherical occulter to control a position of the CubeSat relative to said spherical occulter, and for formation flying feedback of a plurality of CubeSats.4. The occulter coronagraph CubeSat of claim 3 , wherein said full-sun photodiodes are disposed on outer edges of a front face of the CubeSat claim 3 , and are ...

DATA OUTPUT DEVICE

A data output device is provided. The data output device includes a converter circuit configured to generate a conversion signal based on an output signal; a boosting circuit configured to generate a boosting signal based on the output signal; and an output circuit configured to generate the output signal based on an input signal and a feedback signal, the feedback signal being based on the conversion signal and the boosting signal. 1. A data output device comprising:a converter circuit configured to generate a conversion signal based on an output signal;a boosting circuit configured to generate a boosting signal based on the output signal; andan output circuit configured to generate the output signal based on an input signal and a feedback signal, the feedback signal being based on the conversion signal and the boosting signal.2. The data output device of claim 1 , wherein the boosting circuit comprises a transistor claim 1 , anda drain node of the transistor and a gate node of the transistor are connected to each other.3. The data output device of claim 1 , wherein the boosting circuit comprises a first transistor and a second transistor claim 1 ,a gate node of the first transistor is connected to a source node of the second transistor,a drain node of the first transistor is connected to a gate node of the second transistor,the source node of the second transistor is connected to the gate node of the first transistor, andthe gate node of the second transistor is connected to the drain node of the first transistor.4. The data output device of claim 3 , wherein the converter circuit comprises a third transistor claim 3 ,a source node of the third transistor is connected to the gate node of the second transistor and the drain node of the first transistor, anda gate node of the third transistor receives the output signal.5. The data output device of claim 3 , further comprising a current source connected to the gate node of the first transistor and the source node of ...

DEPTH MAP SENSOR BASED ON DTOF AND ITOF

The present disclosure relates to a depth map sensor including a light source for transmitting light pulses into an image scene; an array of pixel circuits, where each pixel circuit has a photodetector and three asynchronous counters; and a control circuit to control each of a plurality of groups of the pixel circuits of the array to generate a histogram of detection events by accumulating events during eight distinct time intervals between consecutive light pulses transmitted by the light source, such that the histogram comprises eight or more histogram bins. 1. A depth map sensor comprising:a light source for transmitting light pulses into an image scene;an array of pixel circuits, each pixel circuit of the array of pixel circuits comprising a photodetector and asynchronous counters that comprises a first, a second, and a third asynchronous counter; anda control circuit configured to control each of a plurality of groups of the array of the pixel circuits to generate a histogram of detection events by accumulating events during eight distinct time intervals between consecutive light pulses transmitted by the light source, wherein the histogram comprises eight or more histogram bins, wherein the number of histogram bins is greater than the number of asynchronous counters of each pixel circuit.2. The depth map sensor of claim 1 , wherein the control circuit is configured to control one or more first ones of the array of pixel circuits to accumulate in its asynchronous counters claim 1 , detection events in three of the eight distinct time intervals claim 1 , and to control one or more second ones of the array of pixel circuits to accumulate in its three asynchronous counters claim 1 , detection events in another three of the eight distinct time intervals.3. The depth map sensor of claim 2 , wherein the control circuit is configured to control claim 2 , during a first cycle between the consecutive light pulses claim 2 , the first ones of the array of pixel circuits ...

APPARATUS

An apparatus comprises an array of vertical-cavity surface-emitting lasers. Each of the vertical-cavity surface-emitting lasers is configured to be a source of light. The apparatus also comprises an optical arrangement configured to receive light from a plurality of the vertical-cavity surface-emitting lasers and to output a plurality of light beams. 1. An apparatus , comprising:an array of vertical-cavity surface-emitting lasers, each of said vertical-cavity surface-emitting lasers being configured to be a source of light; andan optical arrangement configured to receive light from a plurality of said vertical-cavity surface-emitting lasers and to output a plurality of output light beams, the optical arrangement including one or more collimators configured to provide one or more collimated beams by collimating the light from the plurality of said vertical-cavity surface-emitting lasers and sub-optics configured to produce the plurality of output light beams by beam shaping the one or more collimated beams.2. The apparatus as claimed in claim 1 , wherein said sub-optics include an array of optical elements configured to produce the plurality of output light beams.3. The apparatus as claimed in claim 1 , wherein said one or more collimators comprises a shared optical element which is configured to receive light from each of said vertical-cavity surface-emitting lasers of said array.4. The apparatus as claimed in claim 1 , wherein said one or more collimators comprises a plurality of collimating lenses configured to produce plural collimated beams of the one or more collimated beams from the light received from the plurality of said vertical-cavity surface-emitting lasers.5. The apparatus as claimed in claim 4 , wherein the plurality of said vertical-cavity surface-emitting lasers are configured to produce a plurality of input light beams and said one or more collimators comprises an array of collimating lenses respectively for each input light beam claim 4 , one or ...

DETECTING LIGHT USING A PLURALITY OF AVALANCHE PHOTODIODE ELEMENTS

A light receiver () is provided having a plurality of avalanche photodiode elements () that can each be biased above a breakdown voltage by a bias voltage and can thus be operated in a Geiger mode, wherein the avalanche photodiode elements () form a plurality of groups, and having a control unit () to change the sensitivity of the avalanche photodiode elements () of a respective group. In this respect, the control unit () is configured to respectively change the sensitivity of the avalanche photodiode elements () of a group at at least one point in time assigned to the group, with different points in time being assigned to the groups. 1. A light receiver comprising:a plurality of avalanche photodiode elements that can each be biased above a breakdown voltage by a bias voltage and can thus be operated in a Geiger mode, wherein the avalanche photodiode elements form a plurality of groups, anda control unit to change the sensitivity of the avalanche photodiode elements of a respective group, wherein the control unit is configured to respectively change the sensitivity of the avalanche photodiode elements of a group at at least one point in time assigned to the group, with different points in time being assigned to the groups.2. The light receiver in accordance with claim 1 ,wherein the control unit is configured to activate avalanche photodiode elements by increasing the bias voltage above the breakdown voltage.3. The light receiver in accordance with claim 1 ,wherein the control unit is configured to deactivate avalanche photodiode elements by decreasing the bias voltage below the breakdown voltage.4. The light receiver in accordance with claim 1 ,wherein the control unit is configured to change the sensitivity by an overvoltage assigned to the group above the breakdown voltage.5. The light receiver in accordance with claim 1 ,wherein a time of flight measurement unit is provided that is configured to determine a time of flight of a light pulse from the signals of the ...

LIGHT DETECTION DEVICE

A photodetecting device includes a semiconductor substrate including a one-dimensionally distributed plurality of pixels. The photodetecting device includes, for each pixel, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors electrically connected in series with the respective avalanche photodiodes, and a signal processing unit arranged to process output signals from the plurality of avalanche photodiodes. Light receiving regions of the plurality of avalanche photodiodes are two-dimensionally distributed for each pixel. Each signal processing unit includes a gate grounded circuit and a current mirror circuit electrically connected to the gate grounded circuit. The gate grounded circuit is electrically connected to the plurality of avalanche photodiodes of the corresponding pixel via the plurality of quenching resistors. The current minor circuit is arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes. 1. A photodetecting device comprising a semiconductor substrate having a first principal surface and a second principal surface opposing each other and including a plurality of pixels one-dimensionally distributed ,wherein, for each of the pixels, the photodetecting device includes:a plurality of avalanche photodiodes including light receiving regions provided in the first principal surface side of the semiconductor substrate, and arranged to operate in Geiger mode;a plurality of quenching resistors provided on the first principal surface side of the semiconductor substrate, and electrically connected in series with the respective avalanche photodiodes; anda signal processing unit arranged to process output signals from the plurality of avalanche photodiodes,wherein the light receiving regions of the plurality of avalanche photodiodes are two-dimensionally distributed for each of the pixels, andeach of the signal processing units includes:a gate grounded circuit ...

Light sensing device

A light sensing device is provided, which includes a photodiode, a capacitor circuit and an ADC. The ADC includes a comparator, a counter, a reset switch, a logic circuit and a reference voltage switching circuit. The reference voltage switching circuit is controlled by the logic circuit to a determination reference voltage. When a primary integration time ends, a first node has a residual voltage that does not reach a reference voltage, the logic circuit controls the reference voltage switching circuit to provide the determination reference voltage to the comparator or the capacitor circuit within a secondary integration time, and the comparator outputs a comparison signal, the logic circuit receives the comparison signal within the secondary integration time, and determines the secondary value and outputs to the counter. The counter generates a primary value within the primary integration time, and the primary value is combined with the secondary value.

OPTICAL PARAMETER MEASUREMENT DEVICE AND OPTICAL PARAMETER MEASUREMENT METHOD

An optical parameter measurement device and a corresponding method are provided. A light beam from a to-be-tested display panel is split by a beam-splitting assembly into at least two testing light beams. A voltage value corresponding to a first testing light beam is measured by a trans-impedance amplification circuit corresponding to a first optical sensor. Next, an integration time period is determined by a control circuit according to voltage values from the trans-impedance amplification circuit and a predetermined relational model between voltage values corresponding to the light intensities and integration time periods. A voltage value corresponding to a second testing light beam is finely measured by the integration circuit corresponding to a second optical sensor within the integration time period. Finally, the display brightness value of the to-be-tested display panel is determined by the control circuit according to a voltage value from the integration circuit within the integration time period. 1. An optical parameter measurement device , comprising a beam-splitting assembly , a first optical sensor , a second optical sensor , a trans-impedance amplification circuit , an integration circuit and a control circuit , whereinthe beam-splitting assembly is configured to split a light beam from a to-be-tested display panel into at least a first testing light beam and a second testing line beam;the first optical sensor is configured to convert a light intensity of the first testing light beam into a photocurrent corresponding to the first testing light beam and input the photocurrent corresponding to the first testing light beam to the trans-impedance amplification circuit;the trans-impedance amplification circuit is configured to subject the photocurrent corresponding to the first testing light beam to a current-to-voltage conversion to acquire a voltage value corresponding to the first testing light beam, amplify the voltage value corresponding to the first ...

Deconvolution By Digital Filtering From Linear Discriminate Analysis

A quantitative optical microscopy arrangement is described. Specifically, a digital filter derived from linear discriminant analysis is described for recovering impulse responses in applications that may include photon counting from a high speed photodetector and applied to remove ringing distortions from impedance mismatch in multiphoton fluorescence microscopy. Training of the digital filter is achieved by defining temporally coincident and non-coincident transients and identifying the projection within filter-space that best separates the two classes. The training allows rapid data analysis by digital filtering. The LDA filter is also capable of recovering deconvolved impulses for single photon counting from highly distorted ringing waveforms from an impedance mismatched photomultiplier tube. The LDA filter is also successful in removing these ringing distortions from two-photon excited fluorescence micrographs and may extend the dynamic range of photon counting by about three orders of magnitude through minimization of detector paralysis. 1. A quantitative optical microscopy arrangement , comprising:a light source configured to provide optical energy to a sample region; an optical-voltaic converter configured to convert the received light into a representative voltage; and', 'a digital deconvolution filter configured to deconvolve impulse response of the detector and signals associated with photons, wherein the digital deconvolution filter includes a plurality of coefficients determined based on a linear discriminant analysis., 'a detector configured to receive light reflected from or emitted through the sample, the detector comprising2. The arrangement of claim 1 , further comprising:a application specific integrated circuit coupled to the detector and configured to provide real-time recovery of a digital impulse output from a signal convolved with the impulse response of an electronic circuit or sensor using a digital filter derived from linear discriminant ...

ELECTRONIC APPARATUS AND MEASURING METHOD

According to one embodiment, an electronic apparatus includes a first avalanche photo diode, a second avalanche photo diode, a first pulse circuit, a second pulse circuit, a first waveform shaping circuit, a second waveform shaping circuit and an adder. The first pulse circuit is configured to shape a signal of the first avalanche photo diode to a first pulse. The second pulse circuit is configured to shape a signal of the second avalanche photo diode to a second pulse. The first waveform shaping circuit is configured to shape the first pulse to a third pulse having a narrower frequency bandwidth than that of the first pulse. The second waveform shaping circuit is configured to shape the second pulse to a fourth pulse having a narrower frequency bandwidth than that of the second pulse. The adder is configured to add the third pulse and the fourth pulse. 1. An electronic apparatus comprising:a first avalanche photo diode;a second avalanche photo diode;a first pulse circuit configured to shape a signal of the first avalanche photo diode to a first pulse;a second pulse circuit configured to shape a signal of the second avalanche photo diode to a second pulse;a first waveform shaping circuit configured to shape the first pulse to a third pulse having a narrower frequency bandwidth than that of the first pulse;a second waveform shaping circuit configured to shape the second pulse to a fourth pulse having a narrower frequency bandwidth than that of the second pulse; andan adder configured to add the third pulse and the fourth pulse.2. The electronic apparatus according to claim 1 , further comprising:a demultiplexer circuit configured to assign each of the first pulses and the second pulses to a plurality of channels and output the each of the first pulses and the second pulses to the assigned channel after a delay time, whereinthe first waveform circuit is connected to either of the channels, and the second waveform circuit is connected to either of the channels.3. The ...

Sensor for measuring concentration of object substance by color change, sensing system comprising same, and method for manufacturing same sensor

Disclosed is a sensor for measuring a concentration of an object substance by a color change. The sensor comprises: a pad; and a support member having the pad attached thereto, wherein the pad is dried after being immersed in a solution containing an ionic substance consisting of an ionized indicator dye and ‘an ion having an opposite polarity to the ionized indicator dye among a cation and an anion constituting the ionic liquid’.

Limitation of Noise on Light Detectors using an Aperture

The present disclosure relates to limitation of noise on light detectors using an aperture. One example embodiment includes a system. The system includes a lens disposed relative to a scene and configured to focus light from the scene onto a focal plane. The system also includes an aperture defined within an opaque material disposed at the focal plane of the lens. The aperture has a cross-sectional area. In addition, the system includes an array of light detectors disposed on a side of the focal plane opposite the lens and configured to intercept and detect diverging light focused by the lens and transmitted through the aperture. A cross-sectional area of the array of light detectors that intercepts the diverging light is greater than the cross-sectional area of the aperture. 1. A system , comprising:a lens disposed relative to a scene and configured to focus light from the scene onto a focal plane;a keyhole-shaped aperture defined within an opaque material disposed at the focal plane of the lens, wherein the keyhole-shaped aperture has a cross-sectional area; andan array of light detectors disposed on a side of the focal plane opposite the lens and configured to intercept and detect diverging light focused by the lens and transmitted through the keyhole-shaped aperture, wherein a cross-sectional area of the array of light detectors that intercepts the diverging light is greater than the cross-sectional area of the keyhole-shaped aperture.2. The system of claim 1 , wherein the array of light detectors comprises a plurality of single photon avalanche diodes (SPADs).3. The system of claim 1 , wherein the light detectors in the array are connected in parallel with one another.4. The system of claim 1 , wherein the cross-sectional area of the keyhole-shaped aperture is adjustable.5. The system of claim 4 , wherein the opaque material comprises an iris configured to define the cross-sectional area of the keyhole-shaped aperture.6. The system of claim 4 , wherein the ...

OPTICAL DETECTOR AND METHOD FOR CONTROLLING THE SAME

An optical detector includes: a light-receiving element that is operated in a Geiger mode by application of a service voltage higher than a breakdown voltage and outputs a pulse signal in accordance with reception of light; a voltage setting unit that is capable of selectively applying any one of the service voltage and a test voltage lower than the breakdown voltage to the light-receiving element; and an abnormality determination unit that performs an abnormality determination process of determining that the light-receiving element is abnormal when the number of pulse signals output from the light-receiving element operated under the test voltage is equal to or greater than a predetermined threshold, and determining that the light-receiving element is normal when the number of pulse signals is smaller than the threshold. 1. An optical detector comprising:a light-receiving element that is operated in a Geiger mode by application of a service voltage higher than a predetermined breakdown voltage and outputs a pulse signal in accordance with reception of light;a voltage setting unit that is capable of selectively applying any one of the service voltage and a test voltage lower than the breakdown voltage to the light-receiving element; andan abnormality determination unit that performs an abnormality determination process of determining that the light-receiving element is abnormal when the number of pulse signals output from the light-receiving element operated under the test voltage is equal to or greater than a predetermined threshold, and determining that the light-receiving element is normal when the number of pulse signals is smaller than the threshold.2. The optical detector according to claim 1 , whereinthe abnormality determination unit deactivates the light-receiving element that has been determined as abnormal in the abnormality determination process.3. The optical detector according to claim 1 , whereinthe abnormality determination unit decreases sensitivity ...

Analog to digital conversion device, illuminance sensor device, and electronic apparatus comprising the illuminance sensor device

An analog to digital conversion device has a plurality of, two, for example, analog to digital converters, and a reference charge quantity interchange section arranged and configured to interchange, among the plurality of analog to digital converters, reference quantities of electric charge (e.g., reference currents or reference capacitances) to be used therein during an analog to digital conversion period.

METHOD AND DEVICE FOR CONTROL OF AVALANCHE PHOTO-DIODE CHARACTERISTICS FOR HIGH SPEED AND HIGH GAIN APPLICATIONS

A device that may include a DC power supply coupled to a fixed current source; an APD; a DC voltage regulator that comprises a regulating transistor, arranged to maintain a regulated voltage at a fixed value over different APD currents; a temperature control module that is arranged to maintain a portion of the temperature control module at a fixed temperature; and compensation circuit that comprises a compensation component that is thermally coupled to the APD. A voltage drop over the compensation component is smaller than a voltage drop over the APD. A sum of (a) a current that pass through the APD and (b) a current that passes through the compensation component is fixed. The portion of the temperature control module is thermally coupled to the compensation component and to the APD 1. A device , comprising:a direct current (DC) power supply coupled to a fixed current source;an avalanche photo-diode (APD);a DC voltage regulator that comprises a regulating transistor, arranged to maintain a regulated voltage at a fixed value over different APD currents;a temperature control module that is arranged to maintain a portion of the temperature control module at a fixed temperature;a compensation circuit that comprises a compensation component that is thermally coupled to the APD;wherein a voltage drop over the compensation component is smaller than a voltage drop over the APD;wherein a sum of (a) a current that passes through the APD and (b) a current that passes through the compensation component is fixed; andwherein the portion of the temperature control module is thermally coupled to the compensation component and to the APD.2. The device according to claim 1 , wherein the voltage drop over the compensation component is smaller than one fourth of the voltage drop over the APD.3. The device according to claim 1 , wherein the voltage drop over the compensation component is smaller than one fifth of the voltage drop over the APD.4. The device according to claim 1 , wherein ...

OPTICAL MODULE

The present disclosure provides an optical module comprising: a photoelectric conversion unit, a first demodulation circuit, and a second demodulation circuit; the first demodulation circuit and the second demodulation circuit are respectively connected to the photoelectric conversion unit; the photoelectric conversion unit is configured to convert the received optical signal into an electrical signal; the first demodulation circuit is configured to demodulate an electrical signal converted by the photoelectric conversion unit and generate a high-frequency electrical signal; the second demodulation circuit is configured to demodulate an electrical signal converted by the photoelectric conversion unit and generate a low-frequency electrical signal. 1. An optical module , comprising: a photoelectric conversion unit , a first demodulation circuit , and a second demodulation circuit; whereinthe first demodulation circuit and the second demodulation circuit are respectively connected to the photoelectric conversion unit;the photoelectric conversion unit is configured to convert a received optical signal into an electrical signal;the first demodulation circuit is configured to demodulate the electrical signal converted by the photoelectric conversion unit and generate a high-frequency electrical signal;the second demodulation circuit is configured to demodulate the electrical signal converted by the photoelectric conversion unit and generate a low-frequency electrical signal.2. The optical module according to claim 1 , wherein the first demodulation circuit comprises: a transimpedance amplifier and a high-pass filtering unit;the transimpedance amplifier is connected to the photoelectric conversion unit;the high-pass filtering unit is connected to the transimpedance amplifier;the transimpedance amplifier is configured to convert a current signal output from the photoelectric conversion unit into a voltage signal and output the voltage signal;the high-pass filtering unit is ...

QUENCHING BIAS CIRCUIT DEVICE AND SINGLE PHOTON DETECTOR COMPRISING THE SAME

Disclosed herein is a quenching bias circuit device capable of operating without a time difference even in a variance in single photon avalanche diode (SPAD). The quenching bias circuit device includes: a light receiving element; a feedback current mirror circuit arranged between a supply voltage and the light receiving element and configured to induce a passive quenching operation so as to maintain a current flowing in the light receiving element to be constant; and a bias quenching circuit connected to a sensing node of the light receiving element and configured to perform an active quenching operation. 1. A quenching bias circuit device , comprising:a light receiving element;a feedback current mirror circuit arranged between a supply voltage and the light receiving element, the feedback current mirror circuit configured to induce a passive quenching operation so as to maintain a current flowing in the light receiving element to be constant; anda bias quenching circuit connected to a sensing node of the light receiving element and configured to perform an active quenching operation.2. The quenching bias circuit device of claim 1 , wherein the feedback current mirror circuit includes:a first feedback current mirror circuit configured to receive a supply current; anda second feedback current mirror circuit configured to induce a current, which is induced through the first feedback current mirror circuit, to the light receiving element.3. The quenching bias circuit device of claim 2 , wherein the first feedback current mirror circuit includes a plurality of NPN transistors disposed and matched to each other claim 2 , andthe second feedback current mirror circuit includes a plurality of PNP transistors disposed and matched to each other.4. The quenching bias circuit device of wherein the light receiving element includes a single photon light receiving element.5. The quenching bias circuit device of claim 1 , further comprising a feedback operation control circuit ...

Differential trans-impedance amplifier receiver using counter-offset circuitry

A system for converting an optical signal into an electrical signal includes at least one differential Trans-Impedance Amplifier (TIA). To minimize (preferably eliminate) DC offset issues at the TIA output, an Input Counter-Offset (ICO) circuit is provided to remove the DC component of the initial optical signal from the input to the TIA. To further maximize the removal of DC offset at the TIA output, an Output Counter-Offset circuit is provided to take DC offset from the TIA output for use as a negative feedback directly to the input of the TIA. Modifications of the present invention are also intended for use with two TIA terminations and with a travelling wave photodiode.

Light Detection using an Aperture

The present disclosure relates to limitation of noise on light detectors using an aperture. One example implementation includes a system. The system includes a lens disposed relative to a scene. The lens focuses light from the scene. The system also includes an aperture defined within an opaque material. The system also includes a waveguide having a first side that receives light focused by the lens and transmitted through the aperture. The waveguide guides the received light toward a second side of the waveguide opposite to the first side. The waveguide has a third side extending between the first side and the second side. The system also includes an array of light detectors that intercepts and detects light propagating out of the third side of the waveguide. 120-. (canceled)21. A system comprising:a lens;a waveguide;an aperture defined within an opaque material, wherein the aperture is disposed between the lens and the waveguide,wherein the lens is configured to focus light from a scene into the aperture such that diverging light is transmitted out of the aperture toward the waveguide,wherein the waveguide is configured to guide light from a first side to a second side by total internal reflection or frustrated total internal reflection such that at least a portion of the guided light propagates out of the waveguide between the first side and the second side; andan array of light detectors that intercepts and detects at least a portion of the diverging light.22. The system of claim 21 , wherein the array of light detectors comprises a plurality of single photon avalanche diodes (SPADs).23. The system of claim 21 , wherein the light detectors in the array are connected in parallel with one another.24. The system of claim 21 , wherein the array of light detectors comprises a silicon photomultiplier (SiPM).25. The system of claim 21 , further comprising a mirror coupled to the waveguide between the first side and the second side.26. The system of claim 21 , wherein ...

Optocoupler with Side-Emitting Electromagnetic Radiation Source

An optocoupler is provided and which includes a side-emitting electromagnetic radiation source configured to emit electromagnetic radiation at a side wall, and an electromagnetic radiation detector configured to detect at least part of the emitted electromagnetic radiation. 1. An optocoupler , comprising:a side-emitting electromagnetic radiation source configured to emit electromagnetic radiation at a side wall; andan electromagnetic radiation detector configured to detect at least part of the emitted electromagnetic radiation.2. The optocoupler of claim 1 , wherein the electromagnetic radiation source is a laser diode.3. The optocoupler of claim 1 , wherein the electromagnetic radiation detector is a photodiode.4. The optocoupler of claim 1 , wherein the electromagnetic radiation source and the electromagnetic radiation detector are electrically decoupled from each other.5. The optocoupler of claim 1 , wherein the electromagnetic radiation source is configured to emit electromagnetic radiation substantially only at the side wall.6. The optocoupler of claim 1 , wherein the electromagnetic radiation detector is configured to detect electromagnetic radiation at a first main surface of the electromagnetic radiation detector.7. The optocoupler of claim 6 , wherein the electromagnetic radiation detector is configured to detect electromagnetic radiation substantially only at the first main surface.8. The optocoupler of claim 6 , wherein the first main surface is an upper main surface of the electromagnetic radiation detector.9. The optocoupler of claim 1 , further comprising:a control unit coupled with the electromagnetic radiation detector and configured to carry out a control task based on the detected electromagnetic radiation.10. The optocoupler of claim 9 , wherein the control task is a switching task.11. The optocoupler of claim 1 , further comprising:an optically transparent encapsulant in which at least part of the electromagnetic radiation source and at least ...

OPTICAL SENSOR DEVICE

An optical sensor device includes at least two light receiving units in which a plurality of types of light receiving elements is integrated in the same vertical structure. In addition, the optical sensor device further includes a switch unit configured to select at least one of the light receiving elements in each of the light receiving units in a time-division manner. 1. An optical sensor device , comprising:at least two light receiving units in which a plurality of types of light receiving elements is integrated in the same vertical structure; anda switch unit configured to select at least one of the light receiving elements in each of the light receiving units in a time-division manner.2. The optical sensor device of claim 1 , wherein the at least two light receiving units comprise at least one first light receiving unit and at least one second light receiving unit claim 1 ,wherein the at least one first light receiving unit includes a first light receiving element and a second light receiving element, light receiving characteristics of the second light receiving element being different from light receiving characteristics of the first light receiving element,wherein the at least one second light receiving unit includes a third light receiving element having light receiving characteristics identical to the light receiving characteristics of the first light receiving element and a fourth light receiving element having light receiving characteristics identical to the light receiving characteristics of the second light receiving element, andwherein the switch unit is configured to switch between a first phase, in which an output from the first light receiving element is selected as a first detection signal and an output from the fourth light receiving element is selected as a second detection signal, and a second phase, in which an output from the third light receiving element is selected as the first detection signal and an output from the second light receiving ...

AMBIENT LIGHT SENSOR

Presented here are devices and methods to correct ambient light measurements made in the presence of optical elements, such as the curved edge of the cover glass associated with the mobile device. In one embodiment, a film with optical properties is placed within the ambient light sensor to diffuse the high-intensity light beam coming from the optical element. In another embodiment, an aperture associated with the ambient light sensor is disposed to prevent the high-intensity light beam from entering the ambient light sensor. In another embodiment, a processor coupled to the ambient light sensor smooths the peak associated with the high intensity light beam produced by the optical element. 1. An apparatus comprising:a light sensor that measures light intensity;a light focusing element comprising a focusing surface positioned proximate to the light sensor, the light focusing element to receive light and to focus light onto the light sensor; receive a signal from the light sensor comprising a peak corresponding to light focused onto the light sensor by the light focusing element;', 'determine a plurality of points associated with the signal such that the plurality of points are outside the peak associated with the signal;', 'replace the peak with a plurality of values interpolated based on the plurality of points to produce a smooth signal; and', 'based on the smooth signal, determine light intensity., 'a processor coupled to the light sensor, the processor configured to2. The apparatus of claim 1 , the light sensor comprising an ambient light sensor.3. The apparatus of claim 1 , the peak comprising a high frequency.4. The apparatus of claim 3 , the processor configured to smooth the peak comprising the processor configured to:perform a low-pass filter operation on the signal to remove the high frequency corresponding to the peak and to produce the smooth signal.5. The apparatus of claim 1 , the light focusing element comprising a substantially curved portion of a ...

OPTOELECTRONIC COMPONENT WITH CURRENT DEFLECTED TO HIGH-GAIN PATHS

A three-terminal avalanche photodiode provides a first controllable voltage drop across a light absorbing region and a second, independently controllable, voltage drop across a photocurrent amplifying region. The absorbing region may also have a different composition from the amplifying region, allowing further independent optimization of the two functional regions. An insulating layer blocks leakage paths, redirecting photocurrent toward the region(s) of highest avalanche gain. The resulting high-gain, low-bias avalanche photodiodes may be fabricated in integrated optical circuits using commercial CMOS processes, operated by power supplies common to mature computer architecture, and used for optical interconnects, light sensing, and other applications. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. A computing or communication device comprising;a three-terminal avalanche photodiode with separate absorbing and amplifying regions and an insulating layer positioned between the absorbing region and a leakage path; anda first electronic module receiving a signal from the avalanche photodiode.11. The computing or communication device of claim 10 , wherein the first electronic module comprises at least one of an input/output interface claim 10 , a processor claim 10 , a data store claim 10 , a dynamic memory claim 10 , or a communications link.12. The computing or communication device of claim 10 , wherein the avalanche photodiode directly senses light from a source outside the device.13. The computing or communication device of claim 10 , wherein the avalanche photodiode is incorporated in an integrated optical module.14. The computing or communication device of claim 13 , wherein the integrated optical module comprises at least one of an input/output interface claim 13 , a processor claim 13 , a data store claim 13 , a dynamic memory claim 13 , or a communications link.15. The computing or ...

SINGLE-PHOTON AVALANCHE DIODE-BASED TIME-OF-FLIGHT SENSOR WITH TWO MODES OF OPERATION

A method may include operating a single-photon avalanche diode (SPAD) in a first mode to determine a light intensity level associated with the SPAD, operating the SPAD in a second mode wherein a reverse bias voltage is applied in the second mode to bias the SPAD beyond its breakdown voltage, such that the SPAD operates in a detection mode, and determining a magnitude of the bias voltage applied to the SPAD in the second mode based on the light intensity level determined in the first mode. 1. A method comprising:operating a single-photon avalanche diode (SPAD) in a first mode to determine a light intensity level associated with the SPAD;operating the SPAD in a second mode wherein a reverse bias voltage is applied in the second mode to bias the SPAD beyond its breakdown voltage, such that the SPAD operates in a detection mode; anddetermining a magnitude of the bias voltage applied to the SPAD in the second mode based on the light intensity level determined in the first mode.2. The method of claim 1 , wherein operating the SPAD in the first mode comprises reverse biasing the SPAD in a linear region of operation of the SPAD.3. The method of claim 2 , wherein reverse biasing the SPAD in the first mode of operation of the SPAD comprises applying the reverse bias voltage having a magnitude lower than a breakdown voltage of the SPAD.4. The method of claim 1 , wherein determining the light intensity level associated with the SPAD comprises:integrating with respect to time a current flowing through the SPAD during the first mode; anddetermining the light intensity level based on the integration of the current.5. The method of claim 4 , further comprising integrating the current flowing through the SPAD over a defined time period equal or greater to a longest round-trip delay of a photon to be detected by the SPAD.6. The method of claim 1 , wherein the magnitude of the bias voltage applied during the second mode of operation is inversely proportional to the light intensity ...

Non-contiguous layouts for photosensitive apparatus

An apparatus includes at least one detector configured to receive return light from an object within a detector field of view the light generated by a light source. The detector includes first and second photosensitive regions configured to receive the return light from the light source. At least one non-photosensitive region is included, and the first and second photosensitive regions are separated by the at least one non-photosensitive region. The at least one non-photosensitive region is associated with one of the first or second photosensitive regions.

SENSING APPARATUS HAVING A LIGHT SENSITIVE DETECTOR FIELD

A sensing apparatus includes a sensor and a processor. The sensor includes at least one light sensitive detector. The processor determines a first control value to control a voltage differential across the at least one light sensitive detector, and compares the first control value with a reference value associated with a reference temperature. Based on the comparison, the processor provides adjustment information for adjusting at least one output of the sensing apparatus, and an operating parameter of the sensing apparatus other than the voltage differential. 122-. (canceled)23. A sensing apparatus comprising:at least one output;a sensor comprising at least one light sensitive detector; and determine a first control value used to control a voltage differential across said at least one light sensitive detector,', 'compare the first control value with a reference value associated with a reference temperature, and', 'based on the comparison, provide adjustment information for adjusting the at least one output and at least one operating parameter that is different from the voltage differential., 'a processor configured to'}24. The sensing apparatus as claimed in claim 23 , wherein the adjustment information is dependent on a magnitude of difference between the first control value and the reference value and whether the first control value is greater or less than the reference value.25. The sensing apparatus as claimed in claim 24 , wherein the magnitude of difference associated with the adjustment information is different depending on whether the first control value is greater or less than the reference value.26. The sensing apparatus as claimed in claim 25 , wherein for the magnitude of difference the adjustment information represents an increased adjustment if the difference between the first control value and the reference value is indicative that temperature is greater than the reference temperature as compared to when the difference between the first control value ...

METHODS AND SYSTEMS FOR USING A LIGHT EMITTING DIODE TO SWITCH A DEVICE ON AND OFF

An on/off switching circuit includes an on/off switch switchable between an on state and an off state, an light emitting diode (LED) driver to power one or more LEDs to illuminate an area of interest, a switch control unit to transition the on/off switch between the on and off states, the switch control unit including a light sensing circuit comprising at least one LED of the LEDs as a light sensor, and a bi-directional gate circuit. When the on/off switch is in the off state the bi-directional gate is in a first conducting state in which the bi-directional gate circuit connects the light sensor to the light sensing circuit, and when the on/off switch is in the on state the bi-directional gate is in a second conducting state in which the bi-directional gate connects the LED driver to the one or more LEDs including the light sensor. 1. An on/off switching circuit comprising:a switch circuit switchable between an on state and an off state;an LED driver to power one or more light emitting diodes (LEDs);an LED signal decoder to receive an output signal from a light sensor comprising at least one LED selected from the one or more LEDs, and to control an on/off state of the switch circuit based on light sensed by the light sensor; anda bi-directional gate circuit switchable between a first conducting state in which the bi-directional gate circuit connects the light sensor to the LED signal decoder and a second conducting state in which the bi-directional gate connects the LED driver to the one or more LEDs including the LEDs functioning as the light sensor.2. The switching circuit as in claim 1 , wherein when the switch circuit is in the off state the bi-directional gate is in the first conducting state claim 1 , and when the switch circuit is in the on state the bi-directional gate is in the second conducting state.3. The switching circuit as in claim 1 , wherein the bi-directional gate and the LED driver are powered regardless of the on/off state of the switch circuit.4 ...

MEASUREMENT DEVICE, DISTANCE MEASUREMENT DEVICE, ELECTRONIC DEVICE, AND MEASUREMENT METHOD

A measurement device according to an embodiment includes: a light receiving element () that has flow of current caused by an avalanche multiplication caused according to a photon incidence while being charged to a predetermined potential and is returned to the charged state by a recharge current, a detection unit () that is configured to detect the current and invert an output signal when the current crosses a threshold value, a delay unit () that is configured to delay timing of the inversion detected by the detection unit, according to a clock, and a control unit () that is configured to control an operation of the light receiving element, based on the timing of the inversion delayed by the delay unit.

Silicon photomultipliers reflective pulse compression

A photon detection device including: a silicon photomultiplier (SiPM) configured to generate a detected signal when the SiPM absorbs a photon; an amplifier; and a transmission line stub between the SiPM and amplifier input. The SiPM connection is configured to transmit the detected signal to the amplifier and a transmission line stub is also configured to receive the SiPM signal and generate a time-delayed reflected signal back into the amplifier input; wherein the amplifier is configured to amplify a combination of the detected signal and the time-delayed reflected signal. The end of the transmission line stub is terminated with a complex impedance that can simultaneously absorb some components of the SiPM pulse response, and reflect others.

BEHAVIOR MODEL OF PHOTODETECTORS WITH A BUILT-IN LOOKUP TABLE

A method for simulating a photodetector behavior includes: receiving an input waveform for an photodetector; receiving an input optical power and a reverse bias voltage for the photodetector; searching for, in a lookup-table library, model parameters for a photodetector behavior model based on the input optical power and the reverse bias voltage; and outputting a second waveform from the photodetector behavior model, where the second waveform is indicative of an electrical response of the photodetector receiving the input waveform.

PHOTODIODE WITH COMPENSATED SPECTRAL RESPONSE

An optical detector includes a first set of one or more photodiodes configured to generate a first photocurrent according to a first spectral response function of an incident light, a second set of one or more photodiodes configured to generate a second photocurrent according to a second spectral response function of the incident light, and a third set of one or more photodiodes configured to generate a third photocurrent according to a third spectral response function of the incident light. The optical detector further includes a module configured to output an indication of the intensity of the incident light according to a fourth spectral response function based on each of the first photocurrent, the second photocurrent, and the third photocurrent. 1. A method comprising:receiving an indication of a first photocurrent from one or more photodiodes configured to generate the first photocurrent in response to an incident light according to a first spectral response function;receiving an indication of a second photocurrent from one or more photodiodes configured to generate the second photocurrent in response to the incident light according to a second spectral response function, wherein the second spectral response function is different from the first spectral response function;receiving an indication of a third photocurrent from one or more photodiodes configured to generate the third photocurrent in response to the incident light according to a third spectral response function, wherein the third spectral response function is different from the first spectral response function and from the second spectral response function; andoutputting an indication of the intensity of the incident light according to fourth spectral response function, wherein the indication of the intensity of the incident light is based on each of the first photocurrent, the second photocurrent, and the third photocurrent, wherein the fourth spectral response function is different from the first ...

Measurement circuit, driving method, and electronic instrument

The present technology relates to a measurement circuit, a driving method, and an electronic instrument capable of reducing power consumption. In the measurement circuit, irradiation light is emitted from the light emitting unit toward the object, and light from the object is received to measure pulse waves or the like. The measurement circuit includes: a light receiving unit that receives light from an object; an integrating unit that performs integration of a current generated in accordance with the reception of the light by the light receiving unit and generates a voltage according to the amount of reception of the light; and a pulse generating unit that generates a pulse signal having a pulse width corresponding to the amount of reception of the light on the basis of the voltage. The present technology can be applied to electronic instruments such as wearable devices, for example.

OPTICAL CONCENTRATION MEASUREMENT DEVICE

An optical concentration measurement device includes an LED light source, alight receiving unit having a rectangular light receiving surface and outputting a detection signal representing intensity of received light, and light guiding units guiding light emitted by the LED light source to the light receiving unit, wherein a shape on the rectangular light receiving surface of light radiated on the light receiving surface is rectangular, the optical concentration measurement device measures concentration of an object to be measured existing in a light path formed by the light guiding units, based on the detection signal output from the light receiving unit, and the light guiding units guide light at a diffraction limit or greater in such a way that area of the light on the rectangular light receiving surface is ½ or less of area of the rectangular light receiving surface. 1. An optical concentration measurement device comprising:an LED light source;a light receiving unit configured to have a rectangular light receiving surface having uniform sensitivity and output a single detection signal representing intensity of received light; anda light guiding unit configured to guide light emitted by the LED light source to the light receiving unit, whereina shape of light on the rectangular light receiving surface, the light being radiated on the light receiving surface, is rectangular,the optical concentration measurement device measures concentration of an object to be measured existing in a light path formed by the light guiding unit, based on the detection signal output from the light receiving unit, andthe light guiding unit guides light at a diffraction limit or greater in such a way that area of the light on the rectangular light receiving surface is ½ or less of area of the rectangular light receiving surface.2. The optical concentration measurement device according to claim 1 , whereinthe light guiding unit guides light at the diffraction limit or greater in such a ...

PROTECTOR FOR PHOTON DETECTOR

A protector to protect a photon detector includes: a pulse rate comparator and a latcher, wherein the latcher latches to a set signal from the pulse rate comparator and protects the photon detector from detecting photons when the latch signal includes a latch protect level. 1. A protector to protect a photon detector , the protector comprising: receives a detector pulse train from a photon detector, the detector pulse train comprising a detector pulse rate;', 'receives a reference pulse train from a reference, the reference pulse train comprising a reference pulse rate;', 'compares the detector pulse rate with the reference pulse rate; and', a run level when the detector pulse rate is less than the reference pulse rate; and', 'a protect level when the detector pulse rate is greater than the reference pulse rate; and, 'produces a set signal in response to comparison of the detector pulse rate with the reference pulse rate, the set signal comprising], 'a pulse rate comparator that receives the set signal from the pulse rate comparator; and', the latcher latches to the run level and produces the latch signal comprising the latch detect level until the set signal attains the protect level, whereupon the latcher produces the latch signal comprising the latch protect level; and', 'the latch signal remains at the latch protect level until a reset signal is received from a toggle, wherein the latcher latches to the set signal in response to receiving the reset signal; and, 'a latch protect level or a latch detect level, such that, 'produces a latch signal comprising, 'protects the photon detector from detecting photons when the latch signal comprises the latch protect level., 'a latcher in electrical communication with the pulse rate comparator and that2. The protector of claim 1 , further comprising a reference that produces the references pulse train and communicates the reference pulse train to the pulse rate comparator.3. The protector of claim 1 , further comprising ...

OPTICAL SENSOR ARRANGEMENT AND METHOD FOR LIGHT SENSING

An optical sensor arrangement () comprises a photodiode () for providing a sensor current (IPD) and an analog-to-digital converter arrangement () which is coupled to the photodiode () and determines a digital value of the sensor current (IPD) in a charge balancing operation in a first phase (A) and in another conversion operation in a second phase (B). 1. An optical sensor arrangement , comprisinga photodiode for providing a sensor current, andan analog-to-digital converter arrangement which is coupled to the photodiode and determines a digital value of the sensor current in a charge balancing operation in a first phase and in another conversion operation in a second phase.2. The optical sensor arrangement according to claim 1 , wherein the digital value of the sensor current comprisesa first series of bits which is determined in the first phase and comprises the most significant bit, anda second series of bits which is determined in the second phase and comprises the least significant bit.3. The optical sensor arrangement according to claim 1 , wherein the analog-to-digital converter arrangement comprisesan amplifier having an amplifier input and an amplifier output, anda comparator having a comparator input coupled to the amplifier output,wherein the photodiode is coupled to the amplifier input.4. The optical sensor arrangement according to claim 3 , wherein the analog-to-digital converter arrangement comprises an analog-to-digital converter coupled to the amplifier output and designed to operate in the second phase.5. The optical sensor arrangement according to claim 3 , wherein at least one of the amplifier and the comparator are used in the first phase as well as in the second phase.6. The optical sensor arrangement according to claim 3 , wherein the analog-to-digital converter arrangement comprises a reference voltage generator having an output that is coupled to a further comparator input of the comparator and is designed to provide a comparator reference ...

Laser Absorptivity Measurement Device

A laser absorptivity measurement device uses a linearly polarized incident beam, an optical configuration comprising an internal polarizing beamsplitter that transmits the linearly polarized incident beam and a quarter-wave plate that converts linearly polarized incident beam into a circularly polarized incident beam that is reflected off a processing substrate. The quarter-wave plate and polarizing beamsplitter can then direct the reflected light back into an integrating volume, where the power of the reflected light can be measured by a photodetector. The laser absorptivity measurement device is capable of making real-time absorption efficiency measurements of a variety of laser-based processes, including laser welding and brazing, additive manufacturing, and laser marking. 1. A laser absorptivity measurement device , comprising: a linearly polarized incident beam,', 'an internal polarizing beamsplitter that transmits the linearly polarized incident beam, and', 'a quarter-wave plate that converts the linearly polarized incident beam into a circularly polarized incident beam;, 'an optical configuration, comprising'}an integrating volume comprising a photodetector; anda processing substrate that reflects and thereby reverses the handedness of at least a portion of the circularly polarized incident beam, resulting in a reverse circularly polarized reflected light;wherein the reverse circularly polarized reflected light passes back through the quarter-wave plate and is converted into a linearly polarized reflected light having linear polarization orthogonal to that of the linearly polarized incident beam, wherein the linearly polarized reflected light passes back into the internal polarizing beam splitter and is reflected into the integrating volume, wherein the power of the linearly polarized reflected light is measured by the photodetector.2. The laser absorptivity measurement device of claim 1 , wherein the integrating volume comprises a hemispherical dome.3. The ...

DETECTION DEVICE AND DETECTION METHOD USING AVALANCHE DIODE ARRAY AND CALIBRATION MATRIX GENERATING METHOD THEREOF

There is provided a detection device using a SPAD array including a sensor array, multiple counters, a processor and a frame buffer. The sensor array includes a plurality of SPADs respectively generates an avalanche current while receiving a photon. Each counter counts a number of triggering times of the avalanche current of a corresponding SPAD within an exposure interval. The frame buffer is pre-stored with a plurality of gain calibration values corresponding to every SPAD of the sensor array. The processor accesses the gain calibration values to accordingly calibrate a counting image frame outputted by the sensor array to output a calibrated image frame. 1. A detection device , comprising:a sensor array, comprising a plurality of single photon avalanche photon diodes (SPADs) arranged in an array, the plurality of SPADs respectively configured to trigger an avalanche current while receiving a photon;multiple counters, each configured to count a number of triggering times of the avalanche current of a corresponding SPAD within an exposure interval;a frame buffer, configured to store a calibration matrix, which includes a plurality of gain calibration values corresponding to every SPAD of the sensor array; anda processor, configured to access the calibration matrix from the frame buffer to accordingly calibrate a counting image frame outputted by the sensor array and output a calibrated image frame.2. The detection device as claimed in claim 1 , wherein each of the gain calibration values of the calibration matrix is associated with a variation slope of multiple different numbers of triggering times of the avalanche current of one SPAD corresponding to multiple different exposure intervals.3. The detection device as claimed in claim 1 , wherein each of the gain calibration values of the calibration matrix is associated with a ratio between a count difference and a time difference claim 1 ,the count difference is a difference between two numbers of triggering times ...

ACTIVE PHOTONIC DEVICE HAVING A DARLINGTON CONFIGURATION WITH FEEDBACK

An active photonic device having a Darlington configuration is disclosed. The active photonic device has a collector layer over a substrate, a base layer over the collector layer, and an emitter layer over the base layer. A connector structure electrically couples an inner emitter region with an outer base region, wherein the collector layer, base layer, the emitter layer and the connector structure are substantially centered within a first region over the substrate. A feedback resistor is coupled between an inner collector region and an inner base region. At least a portion of the feedback resistor is arc-shaped and resides over a first arcuate path defined by a substantially constant first radius centered in the first region. 1. An active photonic device having a Darlington configuration comprising:a substrate; an inner collector region; and', 'an outer collector region that substantially surrounds the inner collector region;, 'a collector layer over the substrate and comprising an inner base region; and', 'an outer base region that substantially surrounds and is spaced apart from the inner base region;, 'a base layer over the collector layer comprising an inner emitter region that is ring-shaped and resides over and extends substantially around an outer periphery of the inner base region; and', 'an outer emitter region that is ring-shaped and resides over and extends substantially around the outer base region;, 'an emitter layer over the base layer and comprisinga connector structure that electrically couples the inner emitter region with the outer base region, wherein the collector layer, base layer, the emitter layer, and the connector structure are substantially centered within a first region over the substrate; anda feedback resistor coupled between the outer collector region and the inner base region and formed over the substrate and outside of the first region.2. The active photonic device of wherein at least a portion of the feedback resistor is arc-shaped ...

LIGHT-RECEIVING ELEMENT AND DETECTION SYSTEM

A light-receiving element, comprising a plurality of photodiodes formed by stacking in this sequence, a lower reflection mirror, a resonator including a photoelectric conversion layer, and an upper reflection mirror on a semiconductor substrate, wherein the plurality of photodiodes share the semiconductor substrate and the lower reflection mirror, the plurality of photodiodes includes a first photodiode having a resonance wavelength λ1 and a second photodiode having a resonance wavelength λ2 that is larger than the resonance wavelength λ1, and a reflectance of the lower reflection mirror has a first peak corresponding to the resonance wavelength λ1 and a second peak corresponding to the resonance wavelength λ2. 1. A light-receiving element , comprising a plurality of photodiodes formed by stacking in this sequence , a lower reflection mirror , a resonator including a photoelectric conversion layer , and an upper reflection mirror on a semiconductor substrate , whereinthe plurality of photodiodes share the semiconductor substrate and the lower reflection mirror,the plurality of photodiodes includes a first photodiode having a resonance wavelength λ1 and a second photodiode having a resonance wavelength λ2 that is larger than the resonance wavelength λ1, anda reflectance of the lower reflection mirror has a first peak corresponding to the resonance wavelength λ1 and a second peak corresponding to the resonance wavelength λ2.2. The light-receiving element according to claim 1 , wherein a reflectance of the lower reflection mirror at the resonance wavelength λ1 and a reflectance of the lower reflection mirror at the resonance wavelength λ2 are at least 0.155.3. The light-receiving element according to claim 1 , whereina reflectance of the lower reflection mirror at the resonance wavelength λ1 is at least 85% of a reflectance at the first peak, anda reflectance of the lower reflection mirror at the resonance wavelength λ2 is at least 85% of a reflectance at the second ...

GEIGER-MODE FOCAL PLANE ARRAY HAVING INCREASED TOLERANCE TO OPTICAL OVERSTRESS

A GmAPD FPA having increased tolerance optical overstress includes a limit resistor that is monolithically integrated into each pixel in the FPA, and which limits the magnitude of the current entering the read out integrated circuit. 1. A Geiger mode avalanche photodiode (GmAPD) focal plane array (FPA) comprising a plurality of pixels , each pixel comprising:a GmAPD;a read-out integrated circuit (ROIC); anda limit resistor that is integrated in the pixel and coupled between the GmAPD and to the ROIC within the pixel, wherein the limit resistor is configured to limit a magnitude of a GmAPD avalanche current before entering the ROIC.2. The GmAPD FPA of claim 1 , wherein the limit resistor is monolithically integrated within the GmAPD of each pixel.3. The GmAPD FPA of claim 1 , wherein the limit resistor is monolithically integrated within the ROIC of each pixel.4. The GmAPD FPA of claim 1 , wherein the limit resistor comprises a first limit resistor and a second limit resistor claim 1 , the first limit resistor being monolithically integrated within the GmAPD of each pixel and the second limit resistor being monolithically integrated within the ROIC of each pixel.5. The GmAPD FPA of claim 1 , wherein the limit resistor is a thin-film resistor.6. The GmAPD FPA of claim 1 , wherein the limit resistor comprises materials selected from the group consisting of NiCr and TaN.7. The GmAPD FPA of claim 1 , wherein the limit resistor has a resistance in the range of about 1 kOhm to about 100 kOhms.8. The GmAPD FPA of claim 1 , wherein the GmAPD comprises:an active region formed within APD device layers;a passivation layer disposed on the APD device layers;an electrical contact formed on a portion of the active region;the limit resistor, wherein the limit resistor is disposed on the passivation layer and is in electrical communication with the electrical contact; anda bond pad formed on at least a portion of the limit resistor.9. The GmAPD FPA of claim 8 , wherein the limit ...

COMPOSITION AND FABRICATING METHOD THEREOF, AND INFRARED RAY SENSOR

A composition, a method fabricating the infrared ray transmitting filter, and an infrared ray sensor are provided. When the composition forms a film with a thickness of 1 μm, transmittance of the film in a wavelength in a range from 400 nm to 700 nm is less than 4%, and transmittance of the film in a wavelength in a range from 900 nm to 1300 nm is more than 90%. The composition comprises an alkali-soluble resin at least containing an acrylic group, a carboxyl group, and a fluorene ring, a photoinitiator, an unsaturated monomer, a pigment mixture, and a solvent. The pigment mixture is formed by mixing a colorant dispersion and a pigment in a weight ratio from 60:40 to 70:30. 1. A composition , comprising:an alkali soluble resin, including an acrylic group, a carboxyl group, and a fluorene ring;a photoinitiator;an unsaturated monomer;a pigment mixture, having a weight ratio of a colorant dispersion to a pigment in a range of 60:40˜70:30; anda solvent.2. The composition according to claim 1 , wherein the alkali soluble resin is a bisphenol fluorene acrylate.3. The composition according to claim 1 , wherein the photoinitiator is selected from a group consisting of oxime ester compounds claim 1 , alkyl phenyl ketone compounds claim 1 , benzoin compounds claim 1 , benzoin derivatives claim 1 , and a combination thereof.4. The composition according to claim 1 , wherein the unsaturated monomer is a mixture of caprolactone-modified acrylates and epoxy-alkanes-modified polyfunctional-group-containing acrylates.6. The composition according to claim 5 , wherein a weight ratio of the benzodifuranone colorant to the perylene colorant is in a range of 10:90˜80:20.7. The composition according to claim 1 , whereina weight percentage of the solvent to the composition is in a range of 10 wt %˜50 wt %; andthe composition contains 0.5˜10 parts by weight of the alkali soluble resin, 0.1˜10 parts by weight of the photoinitiator, 0.5˜25 parts by weight of the unsaturated monomer, and 55˜98 ...

System, Device, and Method for Quantum Correlation Measurement With Single Photon Avalanche Diode Arrays

A system for photon correlation of an illuminated object and/or a light source, including a light source for illuminating the object or to correlate, an optical system having an object-facing side configured to face the object or the light source and a projection side, the projection side having a focal plane, a single-chip single photon avalanche photodiode (SPAD) array arranged at the focal plane, and a timing circuit associated with the single-chip SPAD array for measuring arrival times of photons detected by the single-chip SPAD array. 1. A system for photon correlation of an illuminated object and/or a light source , comprising:a light source for illuminating the object or to correlate;an optical system having an object-facing side configured to face the object or the light source and a projection side, the projection side having a focal plane;a single-chip single photon avalanche photodiode (SPAD) array arranged at the focal plane; anda timing circuit associated with the single-chip SPAD array for measuring arrival times of photons detected by the single-chip SPAD array.2. The system of claim 1 , further comprising:a data processor for reading the data from the timing circuit and extracting temporal photon correlations, photon number or photon correlation image.3. The system of claim 2 , wherein the data processor is further configured to perform scanning measurement of a quantum image scanning microscopy (Q-ISM) image of the object.4. The system of claim 2 , wherein the illumination source directly illuminates the SPAD array for characterization of photon correlations of light in a classical or quantum state.5. The system of claim 1 , wherein individual pixels of the single-chip SPAD array have minimized electrical crosstalk by substrate isolation and minimized optical crosstalk by at least one of active quenching and opaque deep trench isolation.6. The system of claim 1 , wherein one or multiple SPAD arrays are detecting light from a multibeam illumination.7 ...

ELECTROMAGNETIC WAVE MODULE AND ELECTROMAGNETIC WAVE CAMERA SYSTEM USING THE SAME

An electromagnetic wave module comprising a chip and a lens unit. The chip has a first face, a second face opposed to the first face, and a third face connecting the first face and the second face. The lens unit has a curved face forming a lens, a fourth face opposed to the curved face, and a recessed portion encompassed in an outer edge of the curved face on a projected plane in an optical axis of the lens. The recessed portion has a fifth face disposed at a position closer to the curved face than the fourth face, and a sixth face connecting the fifth face and the fourth face. At least a part of the sixth face of the recessed portion is in contact with at least a part of the third face of the chip. 1. An electromagnetic wave module comprising a chip and a lens unit ,wherein the chip has a first face, a second face opposed to the first face, and a third face connecting the first face and the second face,wherein the chip at least includes an antenna electrode disposed on the first face, a reference portion disposed on the second face and configured to determine a reference potential, and a semiconductor portion disposed between the antenna electrode and the reference portion and configured to perform gain action or rectification action on electromagnetic waves,wherein the lens unit has a curved face forming a lens, a fourth face opposed to the curved face, and a recessed portion encompassed in an outer edge of the curved face on a projected plane in an optical axis of the lens,wherein the recessed portion has a fifth face disposed at a position closer to the curved face than the fourth face, and a sixth face connecting the fifth face and the fourth face, andwherein at least a part of the sixth face of the recessed portion is in contact with at least a part of the third face of the chip.2. The electromagnetic wave module according to claim 1 , wherein at least a part of the sixth face serves as a first positioning portion provided on a part or whole of the sixth face. ...

Single-photon detection apparatus and method

This application provides a single-photon detection apparatus, including a phase-reversed reflection branch, a single-photon sensing device, and a phase-unreversed reflection branch, an input signal is divided into two input signals, and the two input signals respectively arrive at the phase-reversed reflection branch and the single-photon sensing device; the phase-reversed reflection branch is configured to perform phase-reversed reflection processing on a received input signal, to obtain a phase-reversed signal; the single-photon sensing device is configured to send a received input signal to the phase-unreversed reflection branch, and is further configured to: sense a photon, generate photon information, and output a first branch signal; the phase-unreversed reflection branch is configured to perform phase-unreversed reflection processing on the input signal that passes through the single-photon sensing device, to obtain a second branch signal; and the first branch signal is superimposed with the second branch signal, to obtain the photon information.