Lichtmodul

Ein Lichtmodul weist ein optisches Element und eine Basis auf, auf der das optische Element montiert ist. Das optische Element weist einen optischen Abschnitt mit einer optischen Fläche; einen elastischen Abschnitt, der derart um den optischen Abschnitt herum vorgesehen ist, dass ein ringförmiger Bereich gebildet wird; und ein Paar von Trägerabschnitten auf, die derart vorgesehen sind, dass der optische Abschnitt in einer ersten Richtung entlang der optischen Fläche sandwichartig aufgenommen wird und auf die eine elastische Kraft aufgebracht wird und zwischen denen sich in Abstand gemäß elastischer Verformung des elastischen Abschnitts verändert. Die Basis weist eine Hauptfläche und einen Montagebereich auf, in dem eine mit der Hauptfläche kommunizierende Öffnung vorgesehen ist. Die Trägerabschnitte werden in einem Zustand in die Öffnung eingesetzt, bei dem eine elastische Kraft des elastischen Abschnitts aufgebracht wird. Das optische Element wird in dem Montagebereich von einer Reaktionskraft ...

Infrared sensor of rear surface irradiation type

A rear-surface-irradiation-type infrared sensor includes a substrate having a through hole passing through between an upper surface and a lower surface; an infrared absorption part on the substrate on a side of the upper surface separate from the substrate by the through hole; and a temperature sensor part detecting a change in a temperature of the infrared absorption part. The through hole includes a first through hole part having an opening on the upper surface and one or more second through hole parts having shapes different from the first through hole constituent part. The first through hole part and the second through hole part(s) communicate with each other. In a cross-sectional shape of the through hole on a plane perpendicular to the upper surface, an inside wall of the first through hole part is outside an inside wall of the of second through hole part(s).

DEVICE FOR the MEASUREMENT Of a HEAT FLUX

L'invention concerne un dispositif pour la mesure d'un flux thermique, comportant une thermopile constituée d'une pluralité de thermojonctions de type distribuées. Le dispositif est constitué d'un premier et un second substrats (Cel, Ce2) en céramique, une première face du premier substrat (Cel) est composée de cavités séparées par des cales de céramique (Cal, Ca2, Ca3, Ca4), la thermopile est placée sur une seconde face plane du premier substrat opposée à la première face, les cales du premier substrat sont disposées sous une thermojonction (Tj2, Tj4, Tj6, Tj8) sur deux de la thermopile, une face du second substrat (Ce2) est composée de cavités séparées par des cales de céramique (Ca5, Ca6, Ca7, Ca8, Ca9), les cales du second substrat reposent sur une thermojonction (Tj1, Tj3, Tj5, Tj7, Tj9) sous laquelle une cale du premier substrat n'est pas disposée. The invention relates to a device for measuring a heat flux, comprising a thermopile consisting of a plurality of thermojunctions of distributed type. The device consists of first and second ceramic substrates (Cel, Ce2), a first face of the first substrate (Cel) is composed of cavities separated by ceramic shims (Cal, Ca2, Ca3, Ca4), the thermopile is placed on a second plane face of the first substrate opposite to the first face, the shims of the first substrate are arranged under a thermojunction (Tj2, Tj4, Tj6, Tj8) on two of the thermopile, a face of the second substrate (Ce2) is composed of cavities separated by ceramic shims (Ca5, Ca6, Ca7, Ca8, Ca9), the shims of the second substrate are based on a thermojunction (Tj1, Tj3, Tj5, Tj7, Tj9) under which a shim of the first substrate n is not willing.

Sensor for contact-free temperature measurement

본 발명은 리세스 상부에 배치된 멤브레인의 상부 및/또는 하부에 형성된 열감지 영역을 이용하여 온도를 측정하는 센서에 관한 것이다. 상기 리세스는 반응성 이온 식각방법에 의해 식각되어 그 측면이 상기 멤브레인에 대해 80°~ 100°의 각도로 배치된 측벽들에 의해 완전히 규정된다. 인접하는 측벽들은 서로에 대해 약 40°의 각도로 배치된다. The present invention relates to a sensor for measuring temperature using a heat sensing area formed on the top and / or bottom of a membrane disposed on top of the recess. The recess is etched by a reactive ion etching process so that its side is completely defined by the sidewalls disposed at an angle of 80 DEG to 100 DEG with respect to the membrane. Adjacent sidewalls are disposed at an angle of about 40 degrees with respect to each other. 멤브레인, 열감지 영역, 리세스, 센서, 베이스 플레이트, 접속부, 도전체, 적외선 필터, 케이스 Membrane, thermal sensing area, recess, sensor, base plate, connection, conductor, infrared filter, case

Thermal infrared detector provided with shield for high fill factor

INFRARED LIGHT DETECTOR HAVING HIGH RESOLUTION

The invention relates to an infrared light detector having a carrier membrane (2) and at least two sensor chips (4, 5) that are fastened to the carrier membrane (2) lying next to one another, that have at least two rows of holes (21, 22) running parallel to one another between the sensor chips (4, 5) that each have a plurality of holes lying behind one another (24, 15; 26, 27), wherein the holes (24, 25) of the one row of holes (21) are staggered to the holes (26, 27) of the neighboring, other row of holes (22), by means of which a heat transmission into the carrier membrane from the one sensor chip (4) to the other sensor chip (5) is prevented by the rows of holes (21, 22).

Radiation sensor, waver, sensor module, and method for the production a radiation sensor

A radiation sensor ( 10 ) comprises a support ( 1 ), a cavity ( 2 ) which may be a recess or a through hole formed in one surface of the support ( 1 ), a sensor element ( 4, 4 a, 4 b) formed above the cavity ( 2 ), preferably on a membrane ( 3 ) covering the cavity ( 2 ), and electric terminals ( 5, 5 a, 5 b) for the sensor element ( 4, 4 a, 4 b). The cavity ( 2 ) in the surface of the support ( 1 ) has a fully or partly rounded contour ( 2 a).

Radiation detector and method for manufacturing a radiation detector

A radiation detector includes a substrate and a membrane suspended above the substrate by spacers, wherein the spacers electrically contact a radiation sensor formed in the membrane and thermally insulate the membrane from the substrate.

Integrated light concentrator

An infrared sensor including an absorber for absorbing incident infrared power to produce a signal representing the temperature of a target object, a frame supporting a membrane which carries the absorber, the frame including a plurality of reflecting surfaces disposed about the circumference of an opening over which the membrane spans for reflecting incident infrared power toward the absorber. By concentrating incident infrared power through reflection, the temperature difference between the absorber and the surrounding frame is increased, thereby producing an increased electrical output from the sensor.

Infrared detecting device with a circular membrane

An infrared (IR) sensor (200) includes a semiconductor material (210), a circular membrane (204) and a thermopile (206A). The semiconductor material (210) includes a cavity (205) surrounded by a frame (212). The circular membrane (204) is positioned over the cavity (205) and has a perimeter supported by the frame (212). The membrane (204) has a first surface for receiving thermal radiation and an oppositely-disposed second surface. The membrane (204) includes at least one infrared absorbing layer (550). The thermopile (206A) includes a plurality of serially connected thermocouples. Each of the thermocouples has dissimilar electrically-resistive materials that define measurement junctions (209), which are positioned on the membrane (204), and reference junctions (207), which are positioned on the frame (212).

Infrared sensor of rear surface irradiation type

A rear-surface-irradiation-type infrared sensor includes a substrate having a through hole passing through between an upper surface and a lower surface; an infrared absorption part on the substrate on a side of the upper surface separate from the substrate by the through hole; and a temperature sensor part detecting a change in a temperature of the infrared absorption part. The through hole includes a first through hole part having an opening on the upper surface and one or more second through hole parts having shapes different from the first through hole constituent part. The first through hole part and the second through hole part(s) communicate with each other. In a cross-sectional shape of the through hole on a plane perpendicular to the upper surface, an inside wall of the first through hole part is outside an inside wall of the of second through hole part(s).

RADIATION SENSOR, WAFER, SENSOR MODULE, AND METHOD FOR THE PRODUCTION OF A RADIATION SENSOR

Radiation detector

The sensor includes a thermopile (2) comprising several thermocouples (4) connected in series. The thermocouples each have a first region (6), which is exposed to radiation transmitted from an object being measured, and a second region, (8) which is in thermal contact with a heat conductor. A temperature sensor determines the temperature of the heat conductor. The thermocouples are arranged radially, such that the first regions lie at the centre of the arrangement, and the second regions lie at the edge of the radial arrangement. The radial arrangement of thermocouples is covered with a temperature-resistant film having a large absorption coefficient in the infrared range.

Infrarotsensor

Ein Infrarotsensor (3), der eine Infrarot Festkörperbilderfassungseinrichtung (100) ausbildet, beinhaltet einen Sensorelementteil (10), angeordnet in einem Gehäuse (11). In dem Sensorelementteil (10) ist eine Absorptionsstruktur (22), die auf einem Substrat (20) abgestützt angeordnet. Die Absorptionsstruktur (22) hat eine Struktur, in der eine zweite Isolierschicht (32), eine Absorptionsschicht (30), und eine erste Isolierschicht (31) auf einer Reflexionsschicht (33) aufgestapelt sind. Die erste Isolierschicht (31) und die zweite Isolierschicht (32) sind so ausgestaltet, eine Schichtdicke zu haben, mit welcher der Absorptionsindex der Infrarotstrahlung (40), die in die Absorptionsstruktur (22) eindringt, maximiert wird in Hinblick auf den Energieverlust in einer optischen Übertragungsstrecke zu der Absorptionsstruktur (22).

Detektor für elektromagnetische Wellen und Gasanalyseeinrichtung

Ein Detektor für elektromagnetische Wellen, der mit einem ersten Sensor für elektromagnetische Wellen, der eine Lichtempfangseinheit hat, die oberhalb eines Substrats von einem Abstützungsschenkel in der Luft gehalten wird, und einem zweiten Sensor für elektromagnetische Wellen versehen ist, der eine Lichtempfangseinheit hat, die oberhalb des Substrats von einem Abstützungsschenkel, der die gleiche Struktur wie der Abstützungsschenkel des ersten Sensors für elektromagnetische Wellen hat, in der Luft gehalten wird und so ausgebildet ist, dass er an den ersten Sensor für elektromagnetische Welle angrenzt, wobei der Detektor für elektromagnetische Wellen dadurch gekennzeichnet ist, dass die Lichtempfangseinheit des ersten Sensors für elektromagnetische Wellen eine Reflexionsschicht hat, wobei die Lichtempfangseinheit des zweiten Sensors für elektromagnetische Wellen einen Absorptionskörper für elektromagnetische Wellen zum Detektieren von Licht eines vorgeschriebenen Wellenlängenbands oder ...

Infrared thermal sensor with beams having different widths

An infrared thermal sensor or pixel 10 for detecting infrared radiation is described. It comprises a substrate (1, Fig.2) and a cap structure (2, Fig.2) together forming a sealed cavity 3. A membrane or diaphragm 4 is suspended therein by a plurality of beams or webs 5a, 5b, 5c, each beam comprising at least one thermocouple (6, Fig. 2) arranged therein or thereon for measuring a temperature difference (ΔT) between the membrane and the substrate. At least two beams have a different length La, Lb and each of the thermocouples have a substantially same constant width Wa, Wb to length La, Lb ratio such that the thermal resistance measured between the membrane and the substrate is substantially constant for each beam 5a, 5b, 5c, and such that the electrical resistance measured between the membrane and the substrate is substantially constant for each beam. The filling factor of the membrane (4, Fig. 2) may be less than 50%. The membrane may be substantially circular or rectangular in cross ...

RADIATION SENSOR, WAFER, SENSOR MODULE AND PROCEDURE FOR THE PRODUCTION OF A RADIATION SENSOR

SENSOR FOR CONTACTLESS MEASURING OF A TEMPERATURE

RADIATION SENSOR

RADIATION SENSOR, WAFER, SENSOR MODULE, AND METHOD FOR THE PRODUCTION OF A RADIATION SENSOR

Disclosed is a radiation sensor (10) comprising a support (1), a lowered area (2) that is embodied within a surface of the support (1) and can represent a depression or a through hole, a sensor element (4, 4a, 4b) which is embodied above the lowered area (2), preferably on a membrane (3) spanning the lowered area (2), and electrical contacts (5, 5a, 5b) for the sensor element (4, 4a, 4b). The lowered area (2) has an entirely or partly rounded contour (2a) within the surface of the support (1).

ELECTROMAGNETIC RADIATION DETECTION DEVICE WITH AN AIRTIGHT ENCAPSULATION STRUCTURE INCLUDING A RELEASE VENT

L'invention porte sur un dispositif de détection (1) de rayonnement électromagnétique, comprenant : - un substrat, - au moins un détecteur thermique (2), disposé sur le substrat, comportant une membrane absorbante suspendue au-dessus du substrat, - une structure d'encapsulation (5) du détecteur thermique, comportant une couche d'encapsulation (6) s'étendant autour et au-dessus dudit détecteur thermique de manière à définir avec le substrat une cavité (4) dans laquelle ledit détecteur thermique est situé, caractérisé en ce que la couche d'encapsulation comprend au moins un orifice traversant (8) dit évent de libération, chaque évent de libération étant disposé de sorte qu'au moins un détecteur thermique ait un unique évent de libération situé en regard de la membrane absorbante correspondante, de préférence au droit du centre de ladite membrane absorbante.

RADIATION DETECTION DEVICE COMPRISING A PACKAGING STRUCTURE HAVING AN IMPROVED MECHANICAL STRENGTH

DEVICE FOR DETECTION OF ELECTROMAGNETIC RADIATION STRUCTURE FOR THE HERMETIC ENCAPSULATION VENTED RELEASE

L'invention porte sur un dispositif de détection (1) de rayonnement électromagnétique, comprenant : - un substrat, - au moins un détecteur thermique (2), disposé sur le substrat, comportant une membrane absorbante suspendue au-dessus du substrat, - une structure d'encapsulation (5) du détecteur thermique, comportant une couche d'encapsulation (6) s'étendant autour et au-dessus dudit détecteur thermique de manière à définir avec le substrat une cavité (4) dans laquelle ledit détecteur thermique est situé, caractérisé en ce que la couche d'encapsulation comprend au moins un orifice traversant (8) dit évent de libération, chaque évent de libération étant disposé de sorte qu'au moins un détecteur thermique ait un unique évent de libération situé en regard de la membrane absorbante correspondante, de préférence au droit du centre de ladite membrane absorbante.

DETECTOR BOLOMETRIQUE Of an ELECTROMAGNETIC RADIATION IN the FIELD OF the TERAHERTZ AND MATRIC DEVICE OF DETECTION COMPRISING SUCH DETECTORS

Un détecteur bolométrique d'un rayonnement térahertz, comprend : ▪ un ensemble réflecteur (104, 130, 132) pour ledit rayonnement électromagnétique ; ▪ au moins un micro-pont bolométrique (106) suspendu au-dessus de l'ensemble réflecteur (104, 130, 132) et comprenant une première antenne papillon (118), une charge résistive (116) couplée à ladite antenne (118) et un élément thermométrique (128) couplé à la charge résistive (116), L'ensemble réflecteur (104, 130, 132) comporte : ▪ une couche réflectrice (132); ▪ une couche isolante (130) sur la couche réflectrice (132) ; ▪ et un réseau périodique de motifs métalliques (104) sur la couche isolante (130), l'épaisseur et la permittivité diélectrique de la couche isolante (130), et le pas et le facteur de remplissage du réseau (104) étant choisis pour obtenir une interférence constructive au niveau dudit micro-pont (106).

PYROELECTRIC INFRARED DETECTING DEVICE, AND METHOD FOR REPLACING PYROELECTRIC ELEMENT IN PYROELECTRIC INFRARED DETECTING DEVICE

SENSOR

The invention relates to a sensor (30) for recording electromagnetic radiation, comprising a sensor element (10), a housing (31, 33), in which said sensor element is arranged and a radiation inlet window (35) in the housing, sealed by a material (32), transparent to the radiation for recording. The transparent material (32) is fixed to the housing by means of a fixing device (38), not in the field of view of the sensor element.

INFRARED DETECTOR ARRAY AND PRODUCTION METHOD THEREFOR

An infrared detector array wherein infrared detectors are arranged in a high density and each detector has a low thermal capacity. An insulating film (2) is disposed on the surface of a silicon substrate having a (100)-plane as its upper surface, and right-angled triangle portions at four corners of matrix-like right-angled quadrilaterals encompassed by two parallel straight lines portions of two sets crossing orthogonally each other on the insulating film (2) are etched to form openings. The silicon substrate is anisotropically etched through the openings in such a manner as to form pyramidal cavities (3) in the silicon substrate below the insulating film (2). The infrared detectors are then disposed on the insulating film.

ENHANCED LATERAL CAVITY ETCH

A cavity is formed in a semiconductor substrate wherein the width of the cavity is greater than the depth of the cavity and wherein the depth of the cavity is non uniform across the width of the cavity. The cavity may be formed under an electronic device in the semiconductor substrate. The cavity is formed in the substrate by performing a first cavity etch followed by repeated cycles of polymer deposition, cavity etch, and polymer removal.

SEQUENTIAL BEAM SPLITTING IN A RADIATION SENSING APPARATUS

Systems, methods, and apparatuses for providing electromagnetic radiation sensing using sequential beam splitting. The apparatuses can include a micro-mirror chip having a plurality of light reflecting surfaces, an image sensor having an imaging surface, and a beamsplitter unit located between the micro-mirror chip and the image sensor. The beamsplitter unit includes a plurality of beamsplitters aligned along a horizontal axis that is parallel to the micro-mirror chip and the imaging surface. The beamsplitters implement the sequential beam splitting. Because of the structure of the beamsplitter unit, the height of the arrangement of the micro-mirror chip, the beamsplitter unit, and the image sensor is reduced such that the arrangement can fit within a mobile device. Within a mobile device, the apparatuses can be utilized for human detection, fire detection, gas detection, temperature measurements, environmental monitoring, energy saving, behavior analysis, surveillance, information gathering and for human-machine interfaces. 1. A radiation sensing apparatus , comprising:a micro-mirror chip comprising a plurality of light reflecting surfaces;an image sensor comprising an imaging surface; and 'the beamsplitter unit comprising a plurality of beamsplitters that are positioned side by side along a horizontal axis that is parallel to the micro-mirror chip and the imaging surface.', 'a beamsplitter unit located between the micro-mirror chip and the image sensor,'}2. The radiation sensing apparatus of claim 1 , wherein there is only one layer of beamsplitters between the micro-mirror chip and the image sensor.3. The radiation sensing apparatus of claim 1 , wherein each light reflecting surface of the plurality of light reflecting surfaces includes a mirror that moves independent of the other mirrors of the plurality of light reflecting surfaces.4. The radiation sensing apparatus of claim 1 , wherein the plurality of light reflecting surfaces faces the imaging surface.5. The ...

INFRARED SENSOR OF REAR SURFACE IRRADIATION TYPE

A rear-surface-irradiation-type infrared sensor includes a substrate having a through hole passing through between an upper surface and a lower surface; an infrared absorption part on the substrate on a side of the upper surface separate from the substrate by the through hole; and a temperature sensor part detecting a change in a temperature of the infrared absorption part. The through hole includes a first through hole part having an opening on the upper surface and one or more second through hole parts having shapes different from the first through hole constituent part. The first through hole part and the second through hole part(s) communicate with each other. In a cross-sectional shape of the through hole on a plane perpendicular to the upper surface, an inside wall of the first through hole part is outside an inside wall of the of second through hole part(s).

PYROELECTRIC DETECTION DEVICE WITH RIGID MEMBRANE

Pyroelectric detection device, including at least: a substrate; a membrane arranged on the substrate; a pyroelectric detection element arranged on the membrane or forming at least one part of the membrane, and including at least one portion of pyroelectric material arranged between first and second electrodes; a cavity passing through the substrate, emerging opposite a part of the membrane which forms a bottom wall of the cavity, and including side edges formed by the substrate; an element for stiffening the membrane arranged in the cavity, partially filling the cavity, made integral with the side edges of the cavity at at least two distinct anchoring regions, and arranged against the membrane.

Thermoelectric-based Infrared Detector having a Cavity and a MEMS Structure Defined by BEOL Metals Lines

Device and method of forming a device are disclosed. The device includes a substrate with a transistor component disposed in a transistor region and a micro-electrical mechanical system (MEMS) component disposed on a membrane over a lower sensor cavity in a hybrid region. The MEMS component serves as thermoelectric-based infrared sensor, a thermopile line structure which includes an absorber layer disposed over a portion of oppositely doped first and second line segments. A back-end-of-line (BEOL) dielectric is disposed on the substrate having a plurality of inter layer dielectric (ILD) layers with metal and via levels. The ILD layers include metal lines and via contacts for interconnecting the components of the device. The metal lines in the metal levels are configured to define a BEOL or an upper sensor cavity over the lower sensor cavity, and metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component.

Sensor for contactless measuring of a temperature

Non-contacting, membrane thermopile sensor, for temperature measurement, has side walls sloping steeply with respect to membrane The sensor has sidewalls (15) that slope at 80-100 degrees relative to the membrane. An Independent claim is included for the manufacture.

BOLOMETER PIXEL TRIGGER

СПОСОБ УМЕНЬШЕНИЯ ЭНЕРГЕТИЧЕСКИХ ПОТЕРЬ ВХОДНОГО ПОТОКА ПОЛЯРИЗОВАННОГО ЛАЗЕРНОГО ИЗЛУЧЕНИЯ В АБСОЛЮТНОМ КРИОГЕННОМ РАДИОМЕТРЕ С ВХОДНЫМ ОКНОМ БРЮСТЕРА

Изобретение относится к области измерительной техники и касается способа уменьшения энергетических потерь входного потока поляризованного лазерного излучения в абсолютном криогенном радиометре с входным окном Брюстера. Способ заключается в том, что входной поток поляризованного лазерного излучения направляют под заданным углом к продольной оси приемной полости абсолютного криогенного радиометра так, чтобы он первоначально попадал на коническую поверхность приемной полости абсолютного криогенного радиометра вблизи основания ее конуса и при этом обеспечивалось максимально возможное количество отражений лазерного излучения в приемной полости абсолютного криогенного радиометра. После этого регулируют пространственное положение плоскости поляризации лазерного излучения до достижения минимума отражения поляризованного лазерного излучения от наружной поверхности окна Брюстера. Технический результат заключается в повышении точности измерения абсолютной мощности потока лазерного излучения. 2 ил.

УСТРОЙСТВО С МЕМБРАННОЙ КОНСТРУКЦИЕЙ ДЛЯ ОБНАРУЖЕНИЯ ТЕПЛОВОГО ИЗЛУЧЕНИЯ, СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ И ИСПОЛЬЗОВАНИЯ

1. Устройство (1) обнаружения теплового излучения, содержащее: ! - по меньшей мере одну мембрану (11), на которой расположен по меньшей мере один датчик (111) тепла для преобразования теплового излучения в электрический сигнал; ! - по меньшей мере одну подложку (12) контура, несущую мембрану, и по меньшей мере один считывающий контур (121) для считывания электрического сигнала, ! и при этом датчик электрически связан через мембрану со считывающим контуром посредством сквозного контакта (120). ! 2. Устройство по п.1, отличающееся тем, что подложка контура и мембрана расположены относительно друг друга так, что между ними имеется по меньшей мере одна полость (15), ограниченная подложкой контура и мембраной. ! 3. Устройство по любому из пп.1 и 2, отличающееся тем, что: ! - предусмотрена по меньшей мере одна крышка для закрытия датчика; ! - подложка контура, мембрана и крышка уложены в стопу так, что мембрана находится между подложкой контура и крышкой. ! 4. Устройство по п.3, отличающееся тем, что мембрана и крышка расположены друг относительно друга так, что между ними имеется по меньшей мере одна полость (14). ! 5. Устройство по п.2, отличающееся тем, что полости, со стороны контура и/или крышки, вакуумированы или выполнены с возможностью их вакуумирования. ! 6. Устройство по любому из пп.4 и 5, отличающееся тем, что полости со стороны крышки и со стороны контура соединены между собой отверстием (114) в мембране. ! 7. Устройство по п.4 или 5, отличающееся тем, что для прохода теплового излучения к датчику в мембране, подложке контура и/или крышке имеется по меньшей мере одно окно (17) для прохода излучения с высокой прозрачностью для теплового излучения. ! 8. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2009 144 001 (13) A (51) МПК G01J 5/04 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ЗАЯВКА НА ИЗОБРЕТЕНИЕ (21)(22) Заявка: 2009144001/28, 28.05.2008 (71) Заявитель(и): ПАЙРИОС ЛТД. (GB) Приоритет(ы): (30) Конвенционный приоритет ...

ЭЛЕМЕНТ ДЛЯ ДЕТЕКТИРОВАНИЯ ЭЛЕКТРОМАГНИТНОГО ИЗЛУЧЕНИЯ, В ЧАСТНОСТИ ИНФРАКРАСНОГО ИЗЛУЧЕНИЯ, МОДУЛЬФОРМИРОВАНИЯ ОПТИЧЕСКОГО ИНФРАКРАСНОГО ИЗОБРАЖЕНИЯ, ВКЛЮЧАЮЩИЙ ТАКОЙ ЭЛЕМЕНТ, И СПОСОБ ДЛЯ ЕГО РЕАЛИЗАЦИИ

... 1. Элемент для детектирования электромагнитного излучения, в частности инфракрасного излучения, содержащий замкнутое пространство (5) с вакуумом или низким давлением, называемое первичное замкнутое пространство, одна из сторон которого состоит из окна (4), являющегося прозрачным для детектируемого излучения, причем, по меньшей мере, один детектор расположен внутри упомянутого замкнутого пространства по существу напротив прозрачного окна (4), и средство (13) для откачки остаточных газов или газопоглотитель, предназначенный для поддерживания вакуума внутри упомянутого замкнутого пространства (5) на заданном уровне, отличающийся тем, что средство для откачки остаточных газов или газопоглотитель расположено внутри вторичного замкнутого пространства (20), расположенного снаружи первичного замкнутого пространства (5), и свободно сообщающегося с последним. 2. Элемент для детектирования электромагнитного излучения по п.1, отличающийся тем, что два замкнутых пространства, первичное (5) и вторичное ...

STRAHLUNGSDETEKTOR UND VERFAHREN ZUR HERSTELLUNG EINES STRAHLUNGSDETEKTORS

Es wird ein Strahlungsdetektor mit einem Substrat und einer Membran, die über Abstandshalter oberhalb des Substrats aufgehängt ist beschrieben, wobei die Abstandshalter einen in der Membran gebildeten Strahlungssensor elektrisch kontaktieren sowie die Membran gegenüber dem Substrat thermisch isolieren.

Bauelement zur Detektion elektromagnetischer Strahlung, insbesondere Infrarot, optische Baugruppe für Infrarotabbildung mit integriertem solchen Bauelement und dessen Herstellungsverfahren

Radiation detector comprising a compensating sensor

Infrared thermal sensor with good SNR

Back-illuminated infrared sensor

LOW-DRIFT INFRARED DETECTOR

적외선 기준 화소를 위한 장치 및 방법

... 기판과 플로팅 차단형 적외선 검출기 및/또는 션트 차단형 적외선 검출기를 포함하는 장치가 개시된다. 플로팅 차단형 적외선 검출기는 기판으로부터 열적으로 격리되어 접속된 적외선 검출기; 및 적외선 검출기 위에 배치되어 적외선 검출기가 외부의 열 방사선을 받는 것을 차단하는 차단 구조체를 포함할 수 있으며, 차단 구조체는 복수의 개구를 포함한다. 션트 차단형 적외선 검출기는 기판에 접속된 추가의 적외선 검출기; 적외선 검출기 위에 배치되어 추가의 적외선 검출기가 외부의 열 방사선을 받는 것을 차단하는 추가의 차단 구조체; 및 추가의 적외선 검출기를 기판 및 추가의 차단 구조체에 열적으로 접속하는 재료를 포함할 수 있다. 상기 장치를 사용하고 형성하는 방법이 또한 개시된다.

Thermal isolation using vertical structures

This invention relates to the construction of microfabricated devices and, in particular, to types of microfabricated devices requiring thermal isolation from the substrates upon which they are built. This invention discloses vertical thermal isolators and methods of fabricating the vertical thermal isolators. Vertical thermal isolators offer an advantage over thermal isolators of the prior art, which were substantially horizontal in nature, in that less wafer real estate is required for the use of the vertical thermal isolators, thereby allowing a greater density per unit area of the microfabricated devices.

Infrared sensing element and temperature measuring device

An infrared sensing element of the present invention includes a base including a thin film portion and a thick wall portion arranged around the thin film portion, and a thermopile including a plurality of thermocouples connected in series so that cold junctions are located on the thick wall portion and hot junctions are located on the thin film portion, wherein a thermosensitive portion is provided in contact with the thick wall portion so that a reference temperature with high accuracy can be used for determining temperature based on output from the thermopile. A PN junction formed on a semiconductor substrate serves as the thermosensitive portion, and it is used to provide for a compact infrared sensing element with high performance at low cost.

On-board radiation sensing apparatus

Systems, methods, and apparatuses for providing on-board electromagnetic radiation sensing using beam splitting in a radiation sensing apparatus. The radiation sensing apparatuses can include a micro-mirror chip including a plurality of light reflecting surfaces. The apparatuses can also include an image sensor including an imaging surface. The apparatuses can also include a beamsplitter unit located between the micro-mirror chip and the image sensor. The beamsplitter unit can include a beamsplitter that includes a partially-reflective surface that is oblique to the imaging surface and the micro-mirror chip. The apparatuses can also include an enclosure configured to enclose at least the beamsplitter and a light source. With the apparatuses, the light source can be attached to a printed circuit board (PCB). Also, the enclosure can include an inner surface that has an angled reflective surface that is configured to reflect light from the light source in a direction towards the beamsplitter ...

THERMAL IMAGE SENSOR WITH CHALCOGENIDE MATERIAL AND METHOD OF FABRICATING THE SAME

A thermal image sensor including a chalcogenide material, and a method of fabricating the thermal image sensor are provided. The thermal image sensor includes a first metal layer formed on a substrate; a cavity exiting the first metal layer adapted for absorbing infrared rays; a bolometer resistor formed on the cavity and including a chalcogenide material; and a second metal layer formed on the bolometer resistor. The thermal image sensor includes a first metal layer formed on a substrate; an insulating layer formed on the first metal layer; a bolometer resistor formed on the insulating layer, including a chalcogenide material and having a thickness corresponding to ¼ of an infrared wavelength (); the thermal image sensor further includes a second metal layer formed on the bolometer resistor.

Tunable finesse infrared cavity thermal detectors

A cavity thermal detector assembly is presented that allows both tunable narrowband and broadband operation. This allows for high light efficiency, low thermal time constant, and flexibility in designing the optical path. The thermal detector/filter layers are part of the top mirror or mirrors of a Gires-Tournois-type optical cavity and provide absorption and reflection that can be adjusted to the desired width and position of the detected band. Tuning, if desired, can be achieved by applying micromechanical methods. Broadband operation may be achieved by bringing the sensor close to the bottom mirror. In this mode, the sensor or its supports may or may not touch over a small area.

Sealed Infrared Imagers

The architecture, design and fabrication of array of suspended micro-elements with individual seals are described. Read out integrated circuit is integrated monolithically with the suspended elements for low parasitics and high signal to noise ratio detection of changes of their electrical resistance. Array of individually sealed, suspended micro-elements is combined with signal processing chip that contains nonvolatile memory with sensitivity calibration of all elements and interpolation between non-functional elements. When the micro-elements are infrared light absorbers, image analysis and recognition is embedded in the processing chip to form the infrared imaging solution for infrared cameras.

INFRARED IMAGE SENSOR

An image sensor includes on a support a plurality of first pixels and a plurality of second pixels intended to detect an infrared radiation emitted by an element of a scene. Each of the pixels includes a bolometric membrane suspended above a reflector covering the support, wherein the reflector of each of the first pixels is covered with a first dielectric layer, and the reflector of each of the second pixels is covered with a second dielectric layer differing from the first dielectric layer by its optical properties.

Integrated diode array and corresponding manufacturing method

An integrated diode array and a corresponding manufacturing method are provided. The integrated diode array includes a substrate having an upper side, and a plurality of blocks of several diodes, which are positioned in a planar manner and are suspended at the substrate above a cavity situated below them in the substrate. The blocks are separated from one another by respective gaps, and within a specific block, the individual diodes are electrically insulated from one another by first STI trenches situated between them.

MICROSTRUCTURED INFRA-RED SENSOR

Infrarotdetektorelement und Temperaturmessgerät

Infrared sensor module

An infrared sensor assembly 100 with a restricted field of view (FOV) comprises at least one sensing element 150 provided on or embedded in a substrate 160 extending substantially in a substrate plane and a cap 110 for covering the at least one sensing element 150. The cap 110 comprises an upper wall for receiving radiation incident on the sensor assembly and a plurality of walls arranged to define a cavity 120 between the cap and the substrate for hosting the sensing element 150. At least one of said cavity walls 130 subtends an angle 181 with respect to the receiving upper wall so as to induce total internal reflection on the cavity wall for incident radiation. The cap 110 may comprise an additional wall 131 defining an aperture for normally-incident radiation. The cavity wall resulting in total internal reflection 130 may comprise reflecting elements, absorbing elements (330, Fig. 3), a pattern or structure, or a coating. The sensing element 150 may be a MEMS, thermopile or similar device ...

Infrared thermal sensor with good SNR

An infrared thermal sensor 10 for detecting infrared radiation comprises a substrate (1, Fig. 2) and a cap structure (2, Fig. 2) together forming a sealed cavity 3. The cavity comprises a gas at a predefined pressure; a membrane or diaphragm arranged in said cavity 3 for receiving infrared radiation (IR); a plurality of beams or webs 5a, 5b for suspending the membrane 4; and a plurality of thermocouples (6, Fig. 2) for measuring a temperature difference (ΔT) between the membrane and the substrate. The ratio of the thermal resistance (RT1) between the membrane and the substrate through the thermocouples, and the thermal resistance (RT2) between the membrane and the substrate through the beams and through the gas is a value in the range of 0.8 to 1.2. The beams may be arranged such that part of the beams is substantially surrounded by the membrane 4 (Figs 18-20). The infrared thermal sensor has a good performance in terms of signal to noise (SNR).

Infrared thermal sensor with beam without thermocouple

TERAHERTZ-WAVE DETECTOR

A terahertz-wave detector having a thermal separation structure in which a temperature detection unit 14 including a bolometer thin film 7 connected to electrode wiring 9 is supported so as to be lifted above a substrate 2 by a support part 13 including the electrode wiring 9 connected to a reading circuit 2a formed on the substrate 2, wherein the terahertz-wave detector is provided with a reflective film 3 that is formed on the substrate 2 and reflects terahertz waves and an absorption film 11 that is formed on the temperature detection unit 14 and absorbs terahertz waves and the reflective film 3 is integrally formed with the reflective film of an adjacent terahertz-wave detector.

Infrared detection sensor array and infrared detection device

The infrared detection sensor array according to the present invention is characterized by being provided with: a substrate; at least one hole that passes through the substrate; a first infrared detection element provided to one side of the substrate; and a second infrared detection element provided so as to at least partially cover the hole, on the other side of the substrate.

For imaging system passive detector

DEVICE FOR DETECTING RADIATION HAVING AN ENCAPSULATION STRUCTURE HAVING AN IMPROVED MECHANICAL STRENGTH

L'invention porte sur un dispositif de détection de rayonnement électromagnétique, comprenant : - un substrat (3), - au moins un détecteur thermique (2), disposée sur le substrat, - une structure d'encapsulation (5) du détecteur, comportant une couche d'encapsulation (6) s'étendant autour et au-dessus du détecteur de manière à définir avec le substrat une cavité (4) dans laquelle le détecteur est situé, caractérisé en ce que la couche d'encapsulation comprend une paroi périphérique (6a) qui entoure le détecteur, et qui présente une section, dans un plan parallèle au plan du substrat, de forme carrée ou rectangulaire, dont les coins (6a-3) sont arrondis.

DEVICE FOR DETECTION OF ELECTROMAGNETIC RADIATION HAS A VENTED HERMETIC ENCAPSULATION STRUCTURE RELEASE

DEVICE FOR DETECTION OF ELECTROMAGNETIC RADIATION HAVING AN ENCAPSULATING STRUCTURE VENTED RELEASE

L'invention porte sur un dispositif de détection (1) de rayonnement électromagnétique, comprenant : - un substrat (3), - au moins un détecteur thermique (2), disposé sur le substrat, - une structure d'encapsulation (5) du détecteur, comportant une couche d'encapsulation (6) s'étendant autour et au-dessus du détecteur de manière à définir avec le substrat une cavité (4) dans laquelle le détecteur est situé, - la couche d'encapsulation comportant au moins un orifice traversant (8), dit évent de libération, l'évent présentant un profil, dans un plan parallèle au plan du substrat, de forme oblongue, caractérisé en ce que l'évent de libération présente un profil transversal, dans un plan transversal orthogonal au plan du substrat, dont la largeur croît à mesure que la distance au substrat augmente.

RADIATION SENSOR, WAFER, SENSOR MODULE, AND METHOD FOR THE PRODUCTION OF A RADIATION SENSOR

Disclosed is a radiation sensor (10) comprising a support (1), a lowered area (2) that is embodied within a surface of the support (1) and can represent a depression or a through hole, a sensor element (4, 4a, 4b) which is embodied above the lowered area (2), preferably on a membrane (3) spanning the lowered area (2), and electrical contacts (5, 5a, 5b) for the sensor element (4, 4a, 4b). The lowered area (2) has an entirely or partly rounded contour (2a) within the surface of the support (1). © KIPO & WIPO 2007 ...

INTEGRATED DIODE ARRAY AND CORRESPONDING MANUFACTURING METHOD

An integrated diode array and a corresponding manufacturing method are provided. The integrated diode array includes a substrate having an upper side, and a plurality of blocks of several diodes, which are positioned in a planar manner and are suspended at the substrate above a cavity situated below them in the substrate. The blocks are separated from one another by respective gaps, and within a specific block, the individual diodes are electrically insulated from one another by first STI trenches situated between them.

SERPENTINE IR SENSOR

In one embodiment, a MEMS sensor includes a mirror and an absorber spaced apart from the mirror, the absorber including a plurality of spaced apart conductive legs defining a tortuous path across an area directly above the mirror.

Optical detection device having adhesive member

A light detection device includes a Fabry-Perot interference filter, a light detector, a spacer that has a placement surface on which a portion outside a light transmission region in a bottom surface of the interference filter is placed, and an adhesive member that adheres the interference filter and the spacer to each other. Elastic modulus of the adhesive member is smaller than elastic modulus of the spacer. At least a part of a lateral surface of the interference filter is located on the placement surface such that a part of the placement surface of the spacer is disposed outside the lateral surface. The adhesive member is disposed in a corner portion formed by the lateral surface of the interference filter and the part of the placement surface of the spacer and contacts each of the lateral surface and the part of the placement surface.

Infrarotdetektorelement und Temperaturmessgerät

Miniaturised thermal radiation detector

The invention relates to a miniaturised thermal radiation detector, which is installed especially in radiation pyrometers. The object of the invention, to attain an increase in sensitivity of known self-supporting thin-layer radiation detectors, is achieved, according to the invention, by creating a well-defined additional volume, filled with protective gas, underneath the self-supporting sensor surface. <IMAGE>

Infrared detector array and production method therefor

An infrared detector array wherein infrared detectors are arranged in a high density and each detector has a low thermal capacity. An insulating film (2) is disposed on the surface of a silicon substrate having a (100)-plane as its upper surface, and right-angled triangle portions at four comers of matrix-like right-angled quadrilaterals encompassed by two parallel straight lines portions of two sets crossing orthogonally each other on the insulating film (2) are etched to form openings. The silicon substrate is anisotropically etched through the openings in such a manner as to form pyramidal cavities (3) in the silicon substrate below the insulating film (2). The infrared detectors are then disposed on the insulating film. ...

Infrared sensor package

An integrated infrared sensor device 1 comprises a sensor substrate 2 and a filter substrate 7. The sensor substrate 2 has a back surface 3 which has a cavity 5 defined therein and an opposing front surface 4 which has at least one infrared sensing element 6 formed therein or arranged thereon. The filter substrate 7 is arranged on the back surface 3 of the sensor substrate 2 such that the filter substrate 7 at least partially covers the cavity 5. The filter substrate 7 is furthermore adapted in shape and composition to transmit infrared radiation and to attenuate radiation in at least part of the visible light spectrum. The device 1 may comprise at least one solder bump 8 arranged on the front surface 4 of the sensor substrate 2 for connecting the device 1 to a carrier 12 in a flip-chip arrangement. The device may comprise a cap 11 arranged on the front surface 4 for blocking out stray radiation. The device may comprise a coating (9, Fig. 2) applied to the filter substrate 7 for collimating ...

Infrared thermal sensor with beams having different widths

BINARY OPTICAL MICROLENS DETECTOR ARRAY

An uncooled IR array, in conjunction with an array of binary optical microlenses, having a large effective fill factor.

RIGID MEMBRANE PYROELECTRIC DETECTION DEVICE

COMPONENT OF DETECTION OF ELECTROMAGNETIC RADIATIONS, AND NOTAMMENTINFRAROUGE, LIGHT UNIT Of INFRA-RED IMAGERY INTEGRATING SUCH a COMPONENT ETPROCEDE FOR SA REALIZATION

Ce composant de détection de rayonnements électromagnétiques, et notamment de rayonnements infrarouges, comprend une enceinte (5) sous vide ou sous pression réduite, dite enceinte primaire, dont l'une des faces (3) est constituée par une fenêtre (4) transparente au rayonnement à détecter, au moins un détecteur proprement dit (6), positionné à l'intérieur de ladite enceinte, sensiblement en regard de la fenêtre transparente (4), et un moyen (13) de pompage de gaz résiduels ou getter, destiné à maintenir à un niveau acceptable le vide au sein de ladite enceinte (5), positionné au sein d'une enceinte secondaire (20), ménagée à l'extérieur de l'enceinte primaire (5), et communiquant librement avec celle-ci.

DEVICE FOR DETECTING ELECTROMAGNETIC RADIATION HAVING A REDUCED CROSSTALK

L'invention porte sur un dispositif de détection (1) d'un rayonnement électromagnétique, comportant un substrat (2), une matrice de détecteurs thermiques (10), chaque détecteur thermique comprenant une membrane absorbante (11) suspendue et une couche réflectrice (14). Le dispositif de détection (1) comporte au moins une paroi verticale opaque (31), disposée sur le substrat (2) et s'étendant longitudinalement entre deux détecteurs thermiques (10) adjacents, et réalisée en un matériau opaque vis-à-vis du rayonnement électromagnétique à détecter. The invention relates to a device (1) for detecting an electromagnetic radiation, comprising a substrate (2), a matrix of thermal detectors (10), each thermal detector comprising a suspended absorbent membrane (11) and a reflective layer ( 14). The detection device (1) comprises at least one opaque vertical wall (31), disposed on the substrate (2) and extending longitudinally between two adjacent thermal detectors (10), and made of a material opaque vis-a-vis electromagnetic radiation to be detected.

INFRARED SENSOR

적외선 센서(1)는 베이스(10), 및 상기 베이스(10)의 표면 위에 형성된 적외선 검출 소자(3)를 포함한다. 상기 적외선 검출 소자(3)는 적외선을 흡수하도록 구성된 박막 형태의 적외선 흡수체(33), 및 상기 적외선 흡수체(33)와 상기 베이스(10)의 온도차를 측정하도록 구성된 감온체(30)을 포함한다. 상기 감온체(30)는 상기 적외선 흡수체(33)와 상기 베이스(10)에 걸쳐 형성된 p형 폴리실리콘층(35), 상기 p형 폴리실리콘층(35)과 접촉하지 않고 상기 적외선 흡수체(33)와 상기 베이스(10)에 걸쳐 형성된 n형 폴리실리콘층(34), 및 상기 p형 폴리실리콘층(35)과 상기 n형 폴리실리콘층(34)을 전기적으로 접속하도록 구성된 접속층(36)을 포함한다. 상기 p형 폴리실리콘층(35) 및 상기 n형 폴리실리콘층(34) 각각의 불순물 농도는 10 18 내지 10 20 cm -3 범위 내이다. 상기 p형 폴리실리콘층(35)의 두께는, 상기 적외선 검출 소자(3)로 검출하는 적외선의 중심 파장을 λ로 나타내고, 상기 p형 폴리실리콘층(35)의 굴절률을 n 1p 로 나타낼 때, λ/4n 1p 이다. 상기 n형 폴리실리콘층(34)의 두께는, n형 폴리실리콘층(34)의 굴절률을 n 1n 으로 나타낼 때, λ/4n 1n 이다.

PYROELECTRIC ELEMENT

A pyroelectric element (10) is provided with a pyroelectric substrate (20), which is a single crystal substrate of lithium tantalate having an X axis, Y axis and Z axis for crystal axes, front surface electrodes (41, 42) provided on the pyroelectric substrate (20), and back surface electrodes (51, 52) forming pairs with the front surface electrodes (41, 42), respectively. The pyroelectric substrate (20) is a Y off-cut plate cut out of single crystal lithium tantalate at an angle rotated a cut angle θ in the Z axis direction from the Y axis, around the X axis, which matches the direction along the electrode surfaces. The cut angle θ is 30 - 60°or 120 - 150°. The thickness of the pyroelectric substrate (20) is preferably 10 µm or less and more preferably 5 - 10 µm.

CMOS CAP FOR MEMS DEVICES

A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermoconforms. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region. The CMOS cap includes a base cap with release openings and a seal cap which seals the release openings. 1. A device comprising:a substrate prepared with a complementary metal oxide semiconductor (CMOS) region with CMOS devices and a sensor region with micro-electro-mechanical system (MEMS) region with a MEMS component; anda CMOS compatible cap disposed on the substrate over the CMOS region and MEMS region, wherein the CMOS compatible cap includes CMOS layers, the CMOS compatible cap is elevated over the MEMS region to provide a cap cavity between the CMOS compatible cap and the MEMS region.2. The device of wherein the CMOS compatible cap comprises:a base cap having at least one cap release opening; anda seal cap for sealing the at least one cap release opening in the base cap.3. The device of wherein the MEMS component comprises a thermoelectric IR sensor.4. The device of wherein the CMOS compatible cap comprises:a base cap having a CMOS IR transparent base cap layer, the base cap includes a cap release opening; anda seal cap for sealing the cap release opening in the base cap.5. The device of wherein the seal cap comprises a CMOS IR transparent seal cap layer sealing the release opening.6. The device of wherein the seal cap comprisesa CMOS IR non-transparent seal cap layer sealing the release opening, wherein the seal cap layer is patterned to expose the CMOS IR-transparent base cap layer to allow IR transmission to the IR sensor while sealing the base cap; anda CMOS IR transparent seal cap layer disposed over the IR non-transparent patterned seal cap layer.7. The device of wherein a bottom surface of the CMOS compatible cap above the ...

SENSOR

Infrared sensing element and temperature measuring device

THERMAL PHOTODETECTOR, THERMAL PHOTODETECTOR DEVICE, ELECTRONIC INSTRUMENT, AND METHOD OF MANUFACTURING THERMAL PHOTODETECTOR

PROBLEM TO BE SOLVED: To reduce a thermal capacity, and to secure necessary mechanical strength during manufacturing of a support member supporting a thermal photodetector element. SOLUTION: The thermal photodetector includes a substrate BS, a thermal photodetector element 5 including a light absorbing film 4, a support member 50 supporting the thermal photodetector element 5 and supported by the substrate BS, and at least one auxiliary support post (57a, 57b) protruding from at least one of the substrate BS and the support member 50 toward the other. A protruding total length L0 of the at least one auxiliary support post (57a, 57b) is shorter than the maximum distance L1 between the substrate BS and the support member 50. COPYRIGHT: (C)2011,JPO&INPIT ...

УСТРОЙСТВО С МЕМБРАННОЙ КОНСТРУКЦИЕЙ ДЛЯ ОБНАРУЖЕНИЯ ТЕПЛОВОГО ИЗЛУЧЕНИЯ, СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ И ИСПОЛЬЗОВАНИЯ

FIELD: physics. SUBSTANCE: device has at least one membrane on which at least one thermal detector is mounted for the conversion of thermal radiation into an electric signal and at least one circuit support for carrying the membrane and at least one readout circuit for reading out the electric signal. The detector is electrically connected through the membrane to the readout circuit by a through-contact. The invention also relates to a method of making said device, comprising the following steps: taking a membrane with a detector and at least one electrical through-contact, as well as a circuit support and bringing together the membrane and the circuit support such that the through-contact passing through the membrane closes the electric circuit between the detector and the readout circuit. The device is preferably made in form of circuits on common wafers. Such functional silicon wafers are stacked, reliably connected and the separate ready devices are separated. The detectors used are preferably pyroelectric sensors. The disclosed device is used as a pressure sensor, a proximity sensor and a thermal imager. EFFECT: high accuracy and information content of thermal measurements. 15 cl, 2 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2 468 346 (13) C2 (51) МПК G01J 5/10 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (21)(22) Заявка: 2009144001/28, 28.05.2008 (24) Дата начала отсчета срока действия патента: 28.05.2008 (73) Патентообладатель(и): ПАЙРИОС ЛТД. (GB) (43) Дата публикации заявки: 10.07.2011 Бюл. № 19 2 4 6 8 3 4 6 (45) Опубликовано: 27.11.2012 Бюл. № 33 (56) Список документов, цитированных в отчете о поиске: WO 2007054111 A1, 18.05.2007. WO 2007000172 A1, 04.01.2007. FR 2867273 A1, 09.09.2005. EP 1719988 A1, 05.11.2006. RU 2258207 C1, 10.08.2005. 2 4 6 8 3 4 6 R U (86) Заявка PCT: EP 2008/004246 (28.05.2008) C 2 C 2 (85) Дата начала рассмотрения заявки PCT на национальной фазе: 29.12.2009 (87) Публикация заявки ...

MINIATURISIERTER THERMISCHER STRAHLUNGSDETEKTOR

Aktuationseinrichtung für ein mikromechanisches Bauelement, mikromechanisches Bauelement und Verfahren zum Herstellen eines mikromechanisches Bauelements

Die vorliegende Erfindung schafft eine Aktuationseinrichtung (1) für ein mikromechanisches Bauelement (2) umfassend einen Aufhängerahmen (3); eine Mehrzahl von Biegebalken (4) mit einem Federmaterial (FM), wobei die Biegebalken (4) jeweils mit dem Aufhängerahmen (3) mechanisch verbunden sind und sich lateral von diesem wegerstrecken; eine Mehrzahl von Aktoreinrichtungen (4a), wobei die Aktoreinrichtungen (4a) mit den Biegebalken (4) mechanisch verbunden sind; ein Ringelement (5) oder Rahmenelement, welches mit den Biegebalken (4) mechanisch verbunden ist und vom Aufhängerahmen (3) lateral beabstandet ist und eine geringere Biegbarkeit aufweist als die Biegebalken (4); eine Mehrzahl von Federelementen (6), welche mit dem Ringelement (5) mechanisch verbunden sind und sich von dem Ringelement (5) auf einer dem Aufhängerahmen (3) abgewandten Seite lateral wegerstrecken; und ein zu bewegendes Zentralsegment (7), wobei die Federelemente (6) das Zentralsegment (7) mit dem Ringelement (5) mechanisch ...

Integrierte Bildgebungsvorrichtung für Infrarotstrahlung und Herstellungsverfahren

Integrierte Bildgebungsvorrichtung, Folgendes aufweisend:- ein Substrat (1) mit einer integrierten Schaltung (4),- eine Abdeckung (2),- eine dielektrische Schicht (3) zwischen dem Substrat (1) und der Abdeckung (2),- einen Sensor (5) oder eine Anordnung von Sensoren (5),- einen Hohlraum (6), der zwischen dem Substrat (1) und der Abdeckung (2) eingeschlossen ist, und- wobei eine der dielektrischen Schicht (3) gegenüberliegende Oberfläche (11) des Substrats (1) oder eine der dielektrischen Schicht (3) gegenüberliegende Oberfläche (12) der Abdeckung (2) mit einer Struktur (8) versehen ist, die einfallende Strahlung auf den Sensor (5) oder die Anordnung von Sensoren (5) lenkt,dadurch gekennzeichnet, dass- die Abdeckung (2) Silizium umfasst, das an ein eine Oberfläche der dielektrischen Schicht (3) bildendes Siliziumoxid gebunden ist,- der Sensor (5) oder die Anordnung von Sensoren (5) im Hohlraum (6) angeordnet ist, und- der Hohlraum (6) ein Vakuum ist oder einen Gasdruck von weniger als 100 ...

Thermischer Infrarotdetektor mit einem Schild zur Verbesserung des Füllfaktors

THERMAL PROTECTION MECHANISMS FOR UNCOOLED MICROBOLOMETERS

Methods and apparatus for preventing solar damage, and other heat-related damage, to uncooled microbolometer pixels. In certain examples, at least some of the pixels (110) of an uncooled microbolometer are configured with a bimetallic thermal shorting structure (200) that protects the pixel(s) from excessive heat damage. In other examples a thermochroic membrane that becomes highly reflective at temperatures above a certain threshold is applied over the microbolometer pixels to prevent the pixels from being damaged by excessive heat.

Micromechanical sensor device and corresponding production method

COMPONENT OF DETECTION OF ELECTROMAGNETIC RADIATIONS, AND IN PARTICULAR INFRA-RED, LIGHT UNIT Of INFRA-RED IMAGERY INTEGRATING SUCH a COMPONENT AND PROCESS FOR SA REALIZATION

Light source for gas sensor

Source de lumière infrarouge (1, 1')pour capteur de gaz, comportant une membrane (30) reliée à un substrat par au moins deux bras de jonction, la source de lumière comportant une piste conductrice (200, 300), s'étendant entre deux plots de connexion (11, 12), disposés sur le substrat, le long d'au moins deux bras de jonction (21, 22, 23, 24), et à travers la membrane, la piste conductrice étant configurée pour produire un échauffement de la membrane lorsqu'elle est parcourue par un courant électrique ; la membrane comportant : une couche support (30a, 30c), formée d'au moins un matériau diélectrique ; une couche de répartition (31), thermiquement conductrice, configurée pour répartir spatialement l'échauffement de la membrane ; la membrane présentant un diamètre ou étant inscrite dans un diamètre inférieur à 1 mm; la source de lumière étant caractérisée en ce que : la piste conductrice (200, 300) forme, entre les plots de connexion, au moins deux branches (231, 232, 301, 302) et au plus quatre branches conductrices disposées en parallèle, chaque branche formant une résistance électrique. Figure d'abrégé : figure 2C Infrared light source (1, 1 ') for a gas sensor, comprising a membrane (30) connected to a substrate by at least two junction arms, the light source comprising a conductive track (200, 300), extending between two connection pads (11, 12), arranged on the substrate, along at least two junction arms (21, 22, 23, 24), and through the membrane, the conductive track being configured to produce a heating of the membrane when it is traversed by an electric current; the membrane comprising: a support layer (30a, 30c), formed of at least one dielectric material; a thermally conductive distribution layer (31) configured to spatially distribute the heating of the membrane; the membrane having a diameter or being inscribed in a diameter of less than 1 mm; the light source being characterized in that: the conductive track (200, 300) ...

INFRARED ARRAY SENSOR

Microbolometer and method of manufacturing

A microbolometer for measuring thermal radiation comprises an electrical circuit on a perforated plastic substrate. The electrical circuit comprises at least one thermistor having a temperature dependent electric resistance, wherein the thermistor is arranged to receive the thermal radiation for changing its temperature depending on a flux of the received thermal radiation. The electrical circuit is configured to measure the electric resistance of the thermistor for calculating the thermal radiation. The microbolometer is configured to cause a gas flow through the perforations for improving thermal characteristics.

Infrared detecting device with a circular membrane

An infrared (IR) sensor includes a semiconductor material, a circular membrane and a thermopile. The semiconductor material includes a cavity surrounded by a frame. The circular membrane is positioned over the cavity and has a perimeter supported by the frame. The membrane has a first surface for receiving thermal radiation and an oppositely-disposed second surface. The membrane includes at least one infrared absorbing layer. The thermopile includes a plurality of serially connected thermocouples. Each of the thermocouples has dissimilar electrically-resistive materials that define measurement junctions, which are positioned on the membrane, and reference junctions, which are positioned on the frame.

Detection device, sensor device, and electronic apparatus

A detection device includes a plurality of pyroelectric elements, detection circuit and a poling circuit. The pyroelectric elements include a first pyroelectric element through an n-th pyroelectric element serially provided between a detection node and a first power supply node with n being an integer equal to or greater than 2. The detection circuit is connected to the detection node. The poling circuit is configured to perform a poling process, in which a direction of polarization of at least one of the first pyroelectric element through the nth pyroelectric element is set independently of a direction of polarization of another one of the first pyroelectric element through the n-th pyroelectric element.

INFRARED LIGHT TRANSMISSIVITY FOR A MEMBRANE SENSOR

In conventional membrane infrared (IR) sensors, little to no attention has been paid toward transmissivity of IR near metal traces. Here, because the substrate of an integrated circuit carrying the sensor is used as a visible light filter, reflection of IR radiation back into the substrate can affect the operation and reliability of the IR sensor. As a result, an arrangement is provided that reduces the area occupied by metal lines by reducing the pitch and compacting the routing so as to reduce the effects from the reflection of IR radiation by metal traces. 1. An apparatus comprising:A. a substrate; i. a plurality of polysilicon traces formed over the substrate, each polysilicon trace having a first width, and the plurality of polysilicon traces occupying a first area;', 'ii. a recess formed in the substrate below at least a portion of each polysilicon trace;', 'iii. a first dielectric layer formed over the polysilicon traces; and', 'iv. a plurality of metal traces formed over the dielectric layer, each metal trace having a second width that is less than the first width, and the plurality of metal traces occupying a second area, each metal trace is associated with at least one of the polysilicon traces to form a pair of electrodes for a thermopile, the horizontal spacing between adjacent metal traces is reduced so that the second area is substantially less than first area;', 'v. a second dielectric layer formed over the metal traces; and', 'vii. an IR absorber formed over the second dielectric layer; and, 'B. an infrared (IR) sensor formed over a first portion of the substrate, the IR sensor including a thermopile and a plurality of sections, each section includingC. active circuitry formed over a second portion of the substrate, the active circuitry being in communication with the IR sensor.2. The apparatus of in which the metal traces are formed in a single metallization layer.3. The apparatus of in which the first dielectric layer includes a plurality of ...

Device for measuring a heat flux

The invention relates to a device for measuring a heat flux, comprising a thermopile formed of a plurality of thermojunctions of distributed type. The device is formed of a first and a second ceramic substrate (Ce 1, Ce 2 ), a first face of the first substrate (Ce 1 ) is composed of cavities which are separated by ceramic spacers (Ca 1, Ca 2, Ca 3, Ca 4 ), the thermopile is placed on a second planar face of the first substrate which is located opposite the first face, the spacers of the first substrate are arranged beneath one thermojunction (Tj 2, Tj 4, Tj 6, Tj 8 ) in two of the thermopile, a face of the second substrate (Ce 2 ) is composed of cavities which are separated by ceramic spacers (Ca 5, Ca 6, Ca 7, Ca 8, Ca 9 ), the spacers of the second substrate rest on a thermojunction (Tj 1, Tj 3, Tj 5, Tj 7, Tj 9 ) beneath which a spacer of the first substrate is not arranged.

Scalable thermoelectric-based infrared detector

Device and method of forming the devices are disclosed. The method includes providing a substrate prepared with transistor and sensor regions. The substrate is processed by forming a lower sensor cavity in the substrate, filling the lower sensor cavity with a sacrificial material, forming a dielectric membrane in the sensor region, forming a transistor in the transistor region and forming a micro-electrical mechanical system (MEMS) component on the dielectric membrane in the sensor region. The method continues by forming a back-end-of-line (BEOL) dielectric having a plurality of interlayer dielectric (ILD) layers with metal and via levels disposed on the substrate for interconnecting the components of the device. The metal lines in the metal levels are configured to define an upper sensor cavity over the lower sensor cavity, and metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component.

Passive detectors for imaging systems

Passive detector structures for imaging systems are provided, which are based on a coefficient of thermal expansion (CTE) framework. With such framework, a CTE-based passive detector structure includes a detector member that is configured to expand or contract in response to thermal heating resulting from photon exposure. The expanding/contracting CTE detector structure is configured to exert mechanical forces on resistor and/or capacitor circuit elements, which are part of an oscillator circuit, to vary the resistance and capacitance of such circuit elements and change a frequency or period of oscillation of an output signal of the oscillator circuit. The change in the frequency or period of oscillation of the output signal of the oscillator circuit is utilized to determine an amount of photon exposure of the CTE-based detector.

PYROELECTRIC DETECTION DEVICE WITH STRESSED SUSPENDED MEMBRANE

Pyroelectric detection device, comprising at least: 1. Pyroelectric detection device , comprising at least:a suspended membrane;a pyroelectric detection element located on the suspended membrane and comprising at least one portion of pyroelectric material located between first and second electrodes, the first electrode being located between said at least one portion of pyroelectric material and the suspended membrane;and in which the suspended membrane and the pyroelectric detection element are subjected to a higher compression stress than a limiting buckling stress of the suspended membrane and the pyroelectric detection element and together form a bistable structure.2. The pyroelectric detection device according to claim 1 , wherein the suspended membrane comprises at least one of the following materials: SiO claim 1 , Si claim 1 , SiN.3. The pyroelectric detection device according to claim 1 , also comprising a substrate in which at least one cavity is formed claim 1 , the suspended membrane comprising edges fixed to the substrate and at least one suspended part located facing said at least one cavity.4. The pyroelectric detection device according to claim 1 , wherein the pyroelectric detection element comprises a black body comprising at least one of the second electrode and a portion of material absorbing infrared radiation located on the second electrode.5. The pyroelectric detection device according to claim 4 , wherein the material absorbing infrared radiation comprises at least one of the following materials: TiN claim 4 , Ni—Cr claim 4 , Ni claim 4 , black metal such that platinum black or black gold.6. The pyroelectric detection device according to claim 1 , wherein the pyroelectric material corresponds to at least one of the following materials: PZT claim 1 , AlN claim 1 , KNN claim 1 , NBT-BT claim 1 , PMN-PT claim 1 , LTO claim 1 , LNO claim 1 , PVDF.7. The pyroelectric detection device according to claim 1 , wherein the first electrode comprises ...

Terahertz-wave detector

A terahertz-wave detector having a thermal separation structure in which a temperature detection unit 14 including a bolometer thin film 7 connected to electrode wiring 9 is supported so as to be lifted above a substrate 2 by a support part 13 including the electrode wiring 9 connected to a reading circuit 2 a formed on the substrate 2 , wherein the terahertz-wave detector is provided with a reflective film 3 that is formed on the substrate 2 and reflects terahertz waves and an absorption film 11 that is formed on the temperature detection unit 14 and absorbs terahertz waves and the reflective film 3 is integrally formed with the reflective film of an adjacent terahertz-wave detector.

Pressure Vessel with High-Pressure Window

The present invention relates to a pressure vessel (1) having a pressure vessel wall (1a) which completely surrounds a reaction chamber (2) as a pressure space for the initiation and/or promotion of chemical and/or physical pressure reactions of a sample (P) to be heated which is accommodated in the reaction chamber (2), wherein the pressure vessel wall (1a) has an infrared-permeable high-pressure window (30) which extends away outward in a direction from the reaction chamber (2) and which is supported in the pressure vessel wall (1a) with respect to a pressure in the reaction chamber (2), wherein the pressure vessel (1) furthermore has an infrared to temperature sensor (40) which is situated directly opposite the high-pressure window (30), in order to measure the temperature of a sample (P), accommodated in the reaction chamber (2), during a pressure reaction through the high-pressure window (30).

INFRARED IMAGE SENSOR

An image sensor includes on a support a plurality of first pixels and a plurality of second pixels intended to detect an infrared radiation emitted by an element of a scene. Each of the pixels includes a bolometric membrane suspended above a reflector covering the support, wherein the reflector of each of the first pixels is covered with a first dielectric layer, and the reflector of each of the second pixels is covered with a second dielectric layer differing from the first dielectric layer by its optical properties. 1. An infrared image sensor comprising:on a support, a plurality of first pixels and a plurality of second pixels intended to detect an infrared radiation emitted by an element of a scene, each pixel comprising a bolometric membrane suspended above a reflector covering the support, the reflector of each first pixel being covered with a first dielectric layer, and the reflector of each second pixel being covered with a second dielectric layer differing from the first dielectric layer by its optical properties;a circuit for reading out first values representative of the temperatures of the bolometric membranes of first and second neighboring pixels; anda processing unit capable of determining the emissivity of the scene element based on the first values the processing unit being configured to generate estimated temperature and emissivity values corresponding to a minimum of an error value representative of differences between, on the one hand, the first values and, on the other hand, second values representative of the temperatures that the bolometric membranes of said neighboring pixels would have according to a theoretical model if the temperature and the emissivity of the scene element had the estimated values.2. The sensor of claim 1 , wherein the error value is a sum weighted by the uncertainties of the first values.3. The sensor of claim 2 , wherein the error value is in the form:{'b': 2', '1', '1', '1', '1', '1', '2', '2', '2, 'sup': 2', '2', '2', ...

Vacuum Packaged Infrared Sensor Arrays

A vacuum packaged infrared sensor array with excellent performances is described. The individual pixel of the infrared sensor array has a thermopile made of recrystallized amorphous silicon resulting in low resistance, low thermal noise, high integration and high sensitivity. The vacuum in the packaged infrared sensor array is enhanced by low temperature oxidization of a porous silicon layer formed in a lid silicon substrate which is bonded with the infrared sensor array silicon substrate. The driving force for lowering oxidization temperature is reduction in surface energy of porous silicon. It has been reported that the surface energy is 0.0001 J/cmfor porous silicon and 0.2 J/cmfor planar crystal silicon. 1. A vacuum packaged infrared sensor array comprising an infrared sensor array silicon substrate , a lid silicon substrate vacuum bonded to the said infrared sensor array silicon substrate , a vacuum chamber sandwiched between the said two silicon substrates , and a soldered eutectic ring sealing the said chamber around the said infrared sensor array in the said infrared sensor silicon substrate , wherein the individual infrared sensor of the said infrared sensor array comprises a flat bottom cavity created in the said infrared sensor array silicon substrate by using porous silicon selectively forming and etching based micromachining technology , a membrane suspended over the said cavity and constructed by a CMOS comparable dielectric stack layer , a thermopile disposed on the said membrane and constructed by a recrystallized amorphous silicon layer , an infrared absorber disposed along one end junctions of the said thermopile and constructed by a stack layer consisting of several CMOS comparable layers and a switch transistor disposed on the frame surrounding and supporting the said membrane and constructed by the said recrystallized amorphous silicon layer and the said lid silicon substrate has a low temperature oxidized porous silicon layer positioned at the ...

Infrared image sensor

An image sensor including includes on a support a plurality of first pixels and a plurality of second pixels intended to detect an infrared radiation emitted by an element of a scene. Each of the pixels includes a bolometric membrane suspended above a reflector covering the support, wherein the reflector of each of the first pixels is covered with a first dielectric layer, and the reflector of each of the second pixels is covered with a second dielectric layer differing from the first dielectric layer by its optical properties.

High Efficiency Room Temperature Infrared Sensor

An infrared (IR) detection sensor for detecting IR radiation. The IR detection sensor including a plurality of nanowires positioned adjacent to each other so as to define a layer. The layer has an outer surface directable towards a source of IR radiation. First and second terminals are electrically coupled to the layer and a circuit is electrically coupled to the first and second terminals. The circuit is configured to determine a value of an electrical property, such as the resistance, of the layer in response to the IR radiation absorbed by the layer.

PASSIVE DETECTORS FOR IMAGING SYSTEMS

Passive detector structures for imaging systems are provided which implement unpowered, passive front-end detector structures with direct-to-digital measurement data output for detecting incident photonic radiation in various portions (e.g., thermal (IR), near IR, UV and visible light) of the electromagnetic spectrum. 1. A device , comprising:a substrate; a resonator member configured to generate an output signal having a frequency or period of oscillation;', 'an unpowered detector member, wherein the unpowered detector member is configured for photon exposure, wherein the unpowered detector member comprises a material having a thermal coefficient of expansion that causes the unpowered detector member to distort due to said photon exposure, wherein the unpowered detector member is further configured to apply a mechanical force to the resonator member due to said distortion of the unpowered detector member, and cause a change in the frequency or period of oscillation of the output signal generated by the resonator member due to said mechanical force applied to the resonator member; and, 'a photon detector formed on the substrate, wherein the photon detector comprisesdigital circuitry configured to (i) determine the frequency or period of oscillation of the output signal generated by the resonator member as a result of the mechanical force applied to the resonator member by the unpowered detector member, and to (ii) determine an amount of said photon exposure based on the determined frequency or period of oscillation of the output signal generated by the resonator member.2. The device of claim 1 , wherein the photon detector is configured to detect thermal infrared energy having a wavelength in a range of about 2 micrometers to 25 micrometers.3. The device of claim 1 , wherein the photon detector further comprises a first support member claim 1 , wherein the unpowered detector member comprises a ribbon member claim 1 , and wherein the ribbon member is suspended above ...

PASSIVE DETECTORS FOR IMAGING SYSTEMS

Passive detector structures for imaging systems are provided which implement unpowered, passive front-end detector structures with direct-to-digital measurement data output for detecting incident photonic radiation in various portions (e.g., thermal (IR), near IR, UV and visible light) of the electromagnetic spectrum. 1. A device , comprising:a substrate; a resonator member configured to generate an output signal having a frequency or period of oscillation;', 'an unpowered detector member, wherein the unpowered detector member is configured for photon exposure, wherein the unpowered detector member comprises a material having a thermal coefficient of expansion that causes the unpowered detector member to distort due to said photon exposure, wherein the unpowered detector member is further configured to apply a mechanical force to the resonator member due to said distortion of the unpowered detector member, and cause a change in the frequency or period of oscillation of the output signal generated by the resonator member due to said mechanical force applied to the resonator member; and, 'a photon detector formed on the substrate, wherein the photon detector comprisesdigital circuitry configured to (i) determine the frequency or period of oscillation of the output signal generated by the resonator member as a result of the mechanical force applied to the resonator member by the unpowered detector member, and to (ii) determine an amount of said photon exposure based on the determined frequency or period of oscillation of the output signal generated by the resonator member.2225. The device of claim 1 , wherein the photon detector is configured to detect thermal infrared energy having a wavelength in a range of about micrometers to micrometers.3. The device of claim 1 , wherein the photon detector further comprises a first support member claim 1 , wherein the unpowered detector member comprises a ribbon member claim 1 , and wherein the ribbon member is suspended above ...

SCALABLE THERMOELECTRIC-BASED INFRARED DETECTOR

Device and method of forming the device are disclosed. The method includes providing a substrate prepared with a complementary metal oxide semiconductor (CMOS) region and a sensor region. A substrate cavity is formed in the substrate in the sensor region, the substrate cavity including cavity sidewalls and cavity bottom surface and a membrane which serves as a substrate cavity top surface. The cavity bottom surface includes a reflector. The method also includes forming CMOS devices in the CMOS region, forming a micro-electrical mechanical system (MEMS) component on the membrane, and forming a back-end-of-line (BEOL) dielectric disposed on the substrate having a plurality of interlayer dielectric (ILD) layers. The BEOL dielectric includes an opening to expose the MEMS component. The opening forms a BEOL cavity above the MEMS component. 1. A device comprising:a substrate comprising a complementary metal oxide semiconductor (CMOS) region and a sensor region;CMOS devices in the CMOS region;a substrate cavity in the substrate in the sensor region, the substrate cavity includes cavity sidewalls and cavity bottom surface and a membrane which serves as a cavity top surface;a micro-electrical mechanical system (MEMS) component disposed on the membrane; anda back-end-of-line (BEOL) dielectric disposed on the substrate having a plurality of interlayer dielectric (ILD) levels with contacts and metal interconnects, wherein the BEOL dielectric comprises an opening to expose the MEMS component, wherein the opening forms a BEOL cavity above the MEMS component.2. The device of further comprises a reflector disposed on the cavity bottom surface.3. The device of wherein the reflector is protected by a protective liner which lines the cavity sidewalls of the substrate cavity and covers the reflector.4. The device of wherein the reflector is a metal silicide or a doped region at the substrate cavity.5. The device of wherein the plurality of interlayer dielectric (ILD) levels of the BEOL ...

ON-BOARD RADIATION SENSING APPARATUS

Systems, methods, and apparatuses for providing on-board electromagnetic radiation sensing using beam splitting in a radiation sensing apparatus. The radiation sensing apparatuses can include a micro-mirror chip including a plurality of light reflecting surfaces. The apparatuses can also include an image sensor including an imaging surface. The apparatuses can also include a beamsplitter unit located between the micro-mirror chip and the image sensor. The beamsplitter unit can include a beamsplitter that includes a partially-reflective surface that is oblique to the imaging surface and the micro-mirror chip. The apparatuses can also include an enclosure configured to enclose at least the beamsplitter and a light source. With the apparatuses, the light source can be attached to a printed circuit board (PCB). Also, the enclosure can include an inner surface that has an angled reflective surface that is configured to reflect light from the light source in a direction towards the beamsplitter. 1. A radiation sensing apparatus , comprising:a micro-mirror chip comprising a plurality of light reflecting surfaces;an image sensor comprising an imaging surface;a beamsplitter unit located between the micro-mirror chip and the image sensor, comprising a beamsplitter that includes a partially-reflective surface that is oblique to the imaging surface and the micro-mirror chip; and enclose at least the beamsplitter and a light source, the light source being attached to a printed circuit board (PCB), the enclosure comprising an inner surface that comprises an angled reflective surface that is configured to reflect light from the light source in a direction towards the beamsplitter; or', 'enclose at least the beamsplitter, the beamsplitter and a light source being attached to a printed circuit board (PCB), and the light source being attached to the PCB by a flexible connector., 'an enclosure, either configured to2. The radiation sensing apparatus of claim 1 , wherein the enclosure ...

SEQUENTIAL BEAM SPLITTING IN A RADIATION SENSING APPARATUS

Systems, methods, and apparatuses for providing electromagnetic radiation sensing using sequential beam splitting. The apparatuses can include a micro-mirror chip having a plurality of light reflecting surfaces, an image sensor having an imaging surface, and a beamsplitter unit located between the micro-mirror chip and the image sensor. The beamsplitter unit includes a plurality of beamsplitters aligned along a horizontal axis that is parallel to the micro-mirror chip and the imaging surface. The beamsplitters implement the sequential beam splitting. Because of the structure of the beamsplitter unit, the height of the arrangement of the micro-mirror chip, the beamsplitter unit, and the image sensor is reduced such that the arrangement can fit within a mobile device. Within a mobile device, the apparatuses can be utilized for human detection, fire detection, gas detection, temperature measurements, environmental monitoring, energy saving, behavior analysis, surveillance, information gathering and for human-machine interfaces. 1. An apparatus comprising:a plurality of mirrors;a sensor having a surface to receive light rays reflected from the mirrors; andat least one beamsplitter located between the mirrors and the sensor, wherein the beamsplitter comprises at least one partially-reflective surface configured to partially reflect light rays towards the mirrors.2. The apparatus of claim 1 , wherein the at least one partially-reflective surface includes first and second partially-reflective surfaces aligned in sequence.3. The apparatus of claim 2 , wherein a first beamsplitter comprises the first partially-reflective surface claim 2 , and a second beamsplitter comprises the second partially-reflective surface.4. The apparatus of claim 3 , wherein the first and second beamsplitters are positioned side by side.5. The apparatus of claim 1 , wherein each mirror comprises a light reflecting surface on one side of the mirror claim 1 , and a radiation absorption surface on an ...

Low-drift infrared detector

A semiconductor device for measuring IR radiation comprising: at least one sensor pixel; at least one reference pixel shielded from said IR radiation comprising a heater; a controller adapted for: measuring a responsivity by applying power to the heater, while not heating the sensor pixel; measuring a first output signal of an unheated pixel and a first reference output signal of the heated pixel, obtaining the responsivity as a function of a measure of the applied power to the heater and of the difference between the first output signal and the first reference output signal; applying a period of cooling down until the temperature of the reference pixel and the sensor pixel are substantially the same; generating the output signal indicative of the IR radiation, based on the difference between the sensor and the reference output signal, by converting this difference using the responsivity.

INFRARED THERMAL SENSOR WITH GOOD SNR

An infrared thermal sensor for detecting infrared radiation, comprising a substrate and a cap structure together forming a sealed cavity, the cavity comprising a gas at a predefined pressure; a membrane arranged in said cavity for receiving infrared radiation; a plurality of beams for suspending the membrane; a plurality of thermocouples for measuring a temperature difference between the membrane and the substrate; wherein the ratio of the thermal resistance between the membrane and the substrate through the thermocouples, and the thermal resistance between the membrane and the substrate through the beams and through the gas is a value in the range of 0.8 to 1.2. A method of designing such a sensor, and a method of producing such a sensor is also disclosed. 1. An infrared thermal sensor for detecting infrared radiation , the infrared thermal sensor comprising:a substrate and a cap structure together forming a sealed cavity, the cavity comprising a gas composition at a predefined pressure;a membrane arranged in said cavity for receiving infrared radiation through a window or aperture;a plurality of beams for suspending the membrane;a plurality of thermocouples arranged on said plurality of beams for measuring a temperature difference between the membrane and the substrate due to incident infrared radiation;wherein the ratio of the thermal resistance between the membrane and the substrate through the thermocouples, and the thermal resistance between the membrane and the substrate through the beams and through the gas composition is a value in the range of 0.8 to 1.2.2. An infrared thermal sensor according to claim 1 , wherein at least the number and geometry of the beams and the number and geometry of the thermocouples are such that the ratio of the thermal resistance between the membrane and the substrate through the thermocouples claim 1 , and the thermal resistance between the membrane and the substrate through the beams and through the gas composition is a value ...

INFRARED THERMAL SENSOR WITH BEAMS HAVING DIFFERENT WIDTHS

An infrared thermal sensor for detecting infrared radiation is described. It comprises a substrate and a cap structure together forming a sealed cavity. A membrane is suspended therein by a plurality of beams, each beam comprising at least one thermocouple arranged therein or thereon for measuring a temperature difference between the membrane and the substrate. At least two beams have a different length and each of the thermocouples have a substantially same constant width to length ratio such that the thermal resistance measured between the membrane and the substrate is substantially constant for each beam, and such that the electrical resistance measured between the membrane and the substrate is substantially constant for each beam. The beams may be linear, and be oriented in a non-radial direction. 1. An infrared thermal sensor for detecting infrared radiation , the infrared thermal sensor comprising:a substrate and a cap structure together forming a sealed cavity;a membrane arranged in said cavity for receiving infrared radiation through a window or aperture;a plurality of beams for suspending the membrane, each beam of the plurality of beams comprising at least one thermocouple arranged therein or thereon for measuring a temperature difference between the membrane and the substrate due to the infrared radiation;wherein:the plurality of beams comprises at least two beams having a different length;and wherein each of the thermocouples in or on the plurality of beams have a substantially same constant width to length ratio;and wherein each of the beams form a straight connection between a first anchor point on a side of the cavity and a second anchor point on the membrane;and wherein the beams are oriented in a direction offset from a radial direction with respect to a center of the membrane.2. The infrared thermal sensor according to claim 1 , wherein the filling factor of the membrane in the cavity is less than 50%.3. The infrared thermal sensor according to ...

Infrared sensor of rear surface irradiation type

A rear-surface-irradiation-type infrared sensor includes a substrate having a through hole passing through between an upper surface and a lower surface; an infrared absorption part on the substrate on a side of the upper surface separate from the substrate by the through hole; and a temperature sensor part detecting a change in a temperature of the infrared absorption part. The through hole includes a first through hole part having an opening on the upper surface and one or more second through hole parts having shapes different from the first through hole constituent part. The first through hole part and the second through hole part(s) communicate with each other. In a cross-sectional shape of the through hole on a plane perpendicular to the upper surface, an inside wall of the first through hole part is outside an inside wall of the of second through hole part(s).

Infra-Red Device

We disclose herein an infra-red (IR) device comprising a substrate comprising an etched cavity portion and a substrate portion; a dielectric layer disposed on the substrate. The dielectric layer comprises a dielectric membrane which is adjacent, or directly above, or below the etched cavity portion of the substrate. The device further comprises a reflective layer on or in or above or below the dielectric membrane to enhance emission or absorption of infrared light at one or more wavelengths.

CMOS CAP FOR MEMS DEVICES

A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermosensors. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region. The CMOS cap includes a base cap with release openings and a seal cap which seals the release openings. 1. A device comprising:a substrate prepared with a complementary metal oxide semiconductor (CMOS) region with CMOS devices and a sensor region with micro-electro-mechanical system (MEMS) region with a MEMS component; anda CMOS compatible cap disposed on the substrate over the CMOS region and MEMS region, wherein the CMOS compatible cap includes CMOS layers, the CMOS compatible cap is elevated over the MEMS region to provide a cap cavity between the cap and the MEMS region.2. The device of wherein the cap comprises:a base cap having at least one cap release opening; anda seal cap for sealing the at least one cap release opening in the base cap.3. The device of wherein the MEMS component comprises a thermoelectric IR sensor.4. The device of wherein the cap comprises:a base cap having a CMOS IR transparent base cap layer, the base cap includes a cap release opening; anda seal cap for sealing the cap release opening in the base cap.5. The device of wherein the seal cap comprises a CMOS IR transparent seal cap layer sealing the release opening.6. The device of wherein the seal cap comprises a CMOS IR non-transparent seal cap layer sealing the release opening claim 4 , wherein the seal cap layer is patterned to expose the CMOS IR-transparent base cap layer to allow IR transmission to the IR sensor while sealing the base cap.7. The device of wherein the seal cap further comprises a CMOS IR transparent seal cap layer disposed over the IR non-transparent patterned seal cap layer.8. The device of wherein the MEMS component comprises an array of ...

Electromagnetic wave detector with improved wavelength selection property

In order to improve efficiency for converting electromagnetic energy into heat energy, an electromagnetic wave detector detecting an electromagnetic wave having a specific wavelength includes a substrate in which a read-out circuit is formed; a temperature detecting portion with a space from the substrate and which includes a bolometer thin film and a first antenna wire; a supporting portion which supports the temperature detecting portion with a space from the substrate and which includes electrode wires connected to the read-out circuit and to the bolometer thin film; and a reflecting portion which is provided to the substrate and which reflects the electromagnetic wave penetrating the temperature detecting portion toward the temperature detecting portion.

Sequential Beam Splitting in a Radiation Sensing Apparatus

Systems, methods, and apparatuses for providing electromagnetic radiation sensing using sequential beam splitting. The apparatuses can include a micro-mirror chip having a plurality of light reflecting surfaces, an image sensor having an imaging surface, and a beamsplitter unit located between the micro-mirror chip and the image sensor. The beamsplitter unit includes a plurality of beamsplitters aligned along a horizontal axis that is parallel to the micro-mirror chip and the imaging surface. The beamsplitters implement the sequential beam splitting. Because of the structure of the beamsplitter unit, the height of the arrangement of the micro-mirror chip, the beamsplitter unit, and the image sensor is reduced such that the arrangement can fit within a mobile device. Within a mobile device, the apparatuses can be utilized for human detection, fire detection, gas detection, temperature measurements, environmental monitoring, energy saving, behavior analysis, surveillance, information gathering and for human-machine interfaces. 1. A radiation sensing apparatus , comprising:a micro-mirror chip comprising a plurality of light reflecting surfaces;an image sensor comprising an imaging surface; and the beamsplitter unit comprising a plurality of beamsplitters that are positioned side by side along a horizontal axis that is parallel to the micro-mirror chip and the imaging surface, and', 'each beamsplitter of the plurality of beamsplitters including a partially-reflective surface that is oblique to the imaging surface and the micro-mirror chip and extends across more than half the height of the beamsplitter., 'a beamsplitter unit located between the micro-mirror chip and the image sensor,'}2. The radiation sensing apparatus of claim 1 , wherein there is only one layer of beamsplitters between the micro-mirror chip and the image sensor.3. The radiation sensing apparatus of claim 1 , wherein each light reflecting surface of the plurality of light reflecting surfaces includes a ...

Infrared sensor module

A sensor assembly for sensing infrared radiation and its manufacture are described. The sensor comprises at least one sensing element provided on or embedded in a substrate extending substantially in a substrate plane, a cap for covering the at least one sensing element, the cap comprising an upper wall for receiving radiation incident on the sensor assembly and a plurality of cavity walls arranged to define a cavity between the cap and the substrate for hosting the sensing element. At least one of said cavity walls subtends an angle with respect to the receiving upper wall so as to induce total internal reflection on said cavity walls for radiation incident thereon.

Microbolometer systems and methods

Microbolometer systems and methods are provided herein. For example, an infrared imaging device includes a substrate having contacts and a surface. The surface defines a plane. The infrared imaging device further includes a microbolometer array coupled to the substrate. Each microbolometer of the microbolometer array includes a second having a first dimension that extends in a first direction substantially parallel to the plane and a second dimension that extends in a second direction away from the plane. The first dimension is less than the second dimension. The segment includes a metal layer and a layer formed on a side of the metal layer.

POLARIZATION SELECTIVE, FREQUENCY SELECTIVE, AND WIDE DYNAMIC RANGE DETECTORS, IMAGING ARRAYS, READOUT INTEGRATED CIRCUITS, AND SENSOR SYSTEMS

This relates to sensor systems, detectors, imagers, and readout integrated circuits (ROICs) configured to selectively detect one or more frequencies or polarizations of light, capable of operating with a wide dynamic range, or any combination thereof. In some examples, the detector can include one or more light absorbers; the patterns and/or properties of a light absorber can be configured based on the desired measurement wavelength range and/or polarization direction. In some examples, the detector can comprise a plurality of at least partially overlapping light absorbers for enhanced dynamic range detection. In some examples, the detector can be capable of electrostatic tuning for one or more flux levels by varying the response time or sensitivity to account for various flux levels. In some examples, the ROIC can be capable of dynamically adjusting at least one of the frame rate integrating capacitance, and power of the illumination source. 1. A light detector comprising: a first light absorber configured to absorb light, and', 'a second light absorber configured to absorb light;, 'a plurality of light absorbers includinga plurality of contacts including a first contact, a second contact, and a third contact; a first post thermally coupled to the first light absorber, the first post connected between the first contact and the second contact,', 'a second post thermally coupled to the second light absorber, the second post connected between the second contact and the third contact; and, 'a plurality of posts includingcircuitry configured to receive differential signals from the first contact, the second contact, and the third contact.2. The light detector of claim 1 , wherein the first light absorber and the second light absorber include materials of the same composition.3. The light detector of claim 1 , wherein the first light absorber claim 1 , the second light absorber claim 1 , or both include one or more of: NiCr claim 1 , Phosphor Bronze claim 1 , VO claim 1 ...

Thermopile infrared individual sensor for measuring temperature or detecting gas

The invention relates to a thermopile infrared individual sensor in a housing that is filled with a gaseous medium having optics and one or more sensor chips with individual sensor cells with infrared sensor structures with reticulated membranes, the infrared-sensitive regions of which are spanned by, in each case, at least one beam over a cavity in a carrier body with good thermal conduction. The object of the invention consists of specifying a thermopile infrared sensor using monolithic Si-micromechanics technology for contactless temperature measurements, which, in the case of a sufficiently large receiver surface, outputs a high signal with a high response speed and which can operated in a gaseous medium with normal pressure or reduced pressure and which is producible in mass produced numbers without complicated technology for sealing the housing. This is achieved by virtue of, in each case, combining a plurality of individual adjacent sensor cells () with respectively one infrared-sensitive region with thermopile structures () on the membrane () on a common carrier body () of an individual chip to a single thermopile sensor structure with a signal output in the housing, consisting of a cap () sealed with a base plate () with a common gaseous medium (). 118141512112310. A thermopile infrared individual sensor in a housing filled with a gas medium and having an optical unit and also one or more sensor chips having individual sensor cells having infrared sensor structures having reticulated membranes , infrared-sensitive regions of which are each spanned by at least one beam over a cavity in a carrier body with good thermal conduction , wherein in each case , multiple individual adjacent sensor cells () respectively having one infrared-sensitive region are combined with thermopile structures ( , ) on the membrane () on a common carrier body () of an individual chip to form an individual thermopile sensor structure having a signal output in the housing , consisting ...

THERMAL TYPE PHOTODETECTOR, THERMAL TYPE PHOTODETECTOR DEVICE, ELECTRONIC INSTRUMENT, AND METHOD OF MANUFACTURING THERMAL TYPE PHOTODETECGTOR

A thermal detector includes a substrate, a thermal detector element, a support member, a support post and an auxiliary support post. The support member supports the thermal detector element. The support post is disposed between the substrate and the support member so that a cavity is disposed between the substrate and the support member. The auxiliary support post is disposed between the substrate and the support member. A gap is disposed between the auxiliary support post and the support member. 1. A thermal detector comprising:a substrate;a thermal detector element;a support member supporting the thermal detector element;a support post disposed between the substrate and the support member so that a cavity is disposed between the substrate and the support member; andan auxiliary support post disposed between the substrate and the support member,a gap being disposed between the auxiliary support post and the support member.2. The thermal detector according to claim 1 , whereinthe support member has a recess, andthe gap is disposed between a surface of the recess and the auxiliary support post.3. The thermal detector according to claim 1 , further comprisingan etching stopper disposed so as to cover the substrate.4. The thermal detector according to claim 3 , whereinthe support post protrudes from the etching stopper.5. The thermal detector according to claim 1 , further comprisinga light absorber covering the thermal detector element. This is a continuation application of U.S. patent application Ser. No. 13/013,040 filed on Jan. 25, 2011. This application claims priority to Japanese Patent Application No. 2010-014177 filed on Jan. 26, 2010. The entire disclosures of U.S. patent application Ser. No. 13/013,040 and Japanese Patent Application No. 2010-014177 are hereby incorporated herein by reference.1. Technical FieldThe present invention relates to a thermal detector, to a thermal detector device, to an electronic instrument, and to a method of manufacturing a ...

RADIATION DETECTOR AND METHOD FOR MANUFACTURING A RADIATION DETECTOR

A radiation detector includes a substrate and a membrane suspended above the substrate by spacers, wherein the spacers electrically contact a radiation sensor formed in the membrane and thermally insulate the membrane from the substrate. 1. A radiation detector comprising a substrate and a membrane suspended above the substrate by spacers , wherein the spacers electrically contact a radiation sensor formed in the membrane and predominately thermally insulate the membrane from the substrate.2. The radiation detector according to claim 1 , wherein the membrane is suspended on the spacers without ridges or wherein the membrane is suspended on at least one of the spacers by a ridge claim 1 , the thermal insulation at the at least one spacer being favored by the spacers.3. The radiation detector according to claim 1 , wherein a reflector is disposed between the substrate and the membrane.4. The radiation detector according to claim 3 , wherein the reflector is disposed between the substrate and the membrane by further spacers.5. The radiation detector according to claim 3 , wherein the reflector comprises a metal layer.6. The radiation detector according to claim 3 , wherein the distance between the reflector and the membrane is an odd claim 3 , integral multiple of a quarter of a main wavelength to be detected.7. The radiation detector according to claim 1 , wherein the spacers are hollow on the inside.8. The radiation detector according to claim 1 , wherein the spacers are manufactured by using ALD and a sacrificial layer method.9. The radiation detector according to claim 1 , wherein a wall of the spacers comprises a plurality of layers of different materials.10. The radiation detector according to claim 9 , wherein the plurality of layers comprise at least one layer of TiN claim 9 , Ti claim 9 , Cu claim 9 , W claim 9 , Sn claim 9 , Ni claim 9 , Au claim 9 , Al or a combination thereof claim 9 , surrounded by an oxide layer.11. The radiation detector according to ...

Thermal protection mechanisms for uncooled microbolometers

Methods and apparatus for preventing solar damage, and other heat-related damage, to uncooled microbolometer pixels. In certain examples, at least some of the pixels of an uncooled microbolometer are configured with a bimetallic thermal shorting structure that protects the pixel(s) from excessive heat damage. In other examples a thermochroic membrane that becomes highly reflective at temperatures above a certain threshold is applied over the microbolometer pixels to prevent the pixels from being damaged by excessive heat.

THERMAL INFRARED SENSOR ARRAY IN WAFER-LEVEL PACKAGE

A thermal infrared sensor array in a wafer-level package includes at least one infrared-sensitive pixel produced using silicon micro mechanics, comprising a heat-isolating cavity in a silicon substrate surrounded by a silicon edge, and a thin membrane connected to the silicone edge by of thin beams. The cavity extends through the silicon substrate to the membrane, and there are slots between the membrane, the beams and the silicon edge. A plurality of infrared-sensitive individual pixels are arranged in lines or arrays and are designed in a CMOS stack in a dielectric layer, forming the membrane, and are arranged between at least one cover wafer which is designed in the form of a cap and has a cavity and a base wafer. The cover wafer, the silicon substrate and the base wafer are connected to one another in a vacuum-tight manner and enclosing a gas vacuum. 1. A thermal infrared sensor array in wafer-level package comprising at least one infrared-sensitive pixel produced using silicon micromachining , comprising a thermally insulating pit in a silicon substrate , said pit being surrounded by a silicon edge , and comprising a thin membrane connected to the silicon edge by thin beams , wherein the pit extends through the silicon substrate as far as the membrane , wherein slots are situated between the membrane , the beams and the silicon edge , wherein a plurality of infrared-sensitive individual pixels are arranged in linear or array form and are configured in a CMOS stack on a dielectric layer in a manner forming the membrane , and are arranged between at least one cover wafer configured in a cap-like fashion and having a cavity and a base wafer , wherein the at least one cover wafer , the silicon substrate and the base wafer are connected to one another in a vacuum-tight fashion , in a manner enclosing a gas vacuum.2. The thermal infrared sensor array as claimed in claim 1 , wherein the at least one cover wafer comprises an infrared-transmissive material of silicon- ...

Chemical sensor

We disclose a chemical sensing device for detecting a fluid. The sensing device comprises: at least one substrate region comprising at least one etched portion; a dielectric region formed on the at least one substrate region, the dielectric region comprising at least one dielectric membrane region adjacent to the at least one etched portion; an optical source for emitting an infra-red (IR) signal; an optical detector for detecting the IR signal emitted from the optical source; one or more further substrates formed on or under the dielectric region, said one or more further substrates defining an optical path for the IR signal to propagate from the optical source to the optical detector. At least one of the optical source and optical detector is formed in or on the dielectric membrane region.

Passive detectors for imaging systems

Passive detector structures for imaging systems are provided which implement unpowered, passive front-end detector structures with direct-to-digital measurement data output for detecting incident photonic radiation in various portions (e.g., thermal (IR), near IR, UV and visible light) of the electromagnetic spectrum.

SCALABLE THERMOELECTRIC-BASED INFRARED DETECTOR

Device and method of forming the device are disclosed. The method includes providing a substrate prepared with a complementary metal oxide semiconductor (CMOS) region and a sensor region. A substrate cavity is formed in the substrate in the sensor region, the substrate cavity including cavity sidewalls and cavity bottom surface and a membrane which serves as a substrate cavity top surface. The cavity bottom surface includes a reflector. The method also includes forming CMOS devices in the CMOS region, forming a micro-electrical mechanical system (MEMS) component on the membrane, and forming a back-end-of-line (BEOL) dielectric disposed on the substrate having a plurality of interlayer dielectric (ILD) layers. The BEOL dielectric includes an opening to expose the MEMS component. The opening forms a BEOL cavity above the MEMS component. 1. A method for forming a device comprising:providing a substrate prepared with a complementary metal oxide semiconductor (CMOS) region and a sensor region;forming a substrate cavity in the substrate in the sensor region, the substrate cavity includes cavity sidewalls and cavity bottom surface and a membrane which serves as a substrate cavity top surface, wherein the cavity bottom surface comprises a reflector;forming CMOS devices in the CMOS region;forming a micro-electrical mechanical system (MEMS) component on the membrane; andforming a back-end-of-line (BEOL) dielectric disposed on the substrate having a plurality of interlayer dielectric (ILD) layers, wherein the BEOL dielectric comprises an opening to expose the MEMS component, wherein the opening forms a BEOL cavity above the MEMS component.2. The method of claim 1 , wherein forming the substrate cavity comprises:etching the substrate to form the substrate cavity with the cavity sidewalls and the cavity bottom surface;forming the reflector on the substrate cavity bottom surface;filling the substrate cavity with a sacrificial material; andforming the membrane, wherein the ...

Thermopile infrared individual sensor for measuring temperature or detecting gas

A thermopile infrared individual sensor includes a housing filled with a gaseous medium. It has optics and one or more sensor chips with individual sensor cells with infrared sensor structures with reticulated membranes, infrared-sensitive regions of which are each spanned by at least one beam over a cavity in a carrier body. The thermopile infrared sensor uses monolithic Si-micromechanics technology for contactless temperature measurements. In the case of a sufficiently large receiver surface, this outputs a high signal with a high response speed. A plurality of individual adjacent sensor cells are combined with respectively one infrared-sensitive region with thermopile structures on the membrane on a common carrier body of an individual chip to a single thermopile sensor structure with a signal output in the housing, consisting of a cap sealed with a base plate with a common gaseous medium. 1. A thermopile infrared sensor , comprising:a housing filled with a gas medium, the housing having a base plate and a cap;an optical unit arranged at an aperture opening in the housing; anda sensor chip having a plurality of sensor cells, each of the plurality of sensor cells having a thermopile infrared-sensitive region, the plurality of sensor cells being arranged on a common carrier body to form a thermopile sensor structure,wherein sensor cells of the plurality of sensor cells are interconnected with one another to form an effective thermopile individual sensor,wherein each sensor cell of the plurality of sensor cells generates an output signal, andwherein the output signals of the plurality of sensor cells are combined to form one output signal of the thermopile infrared sensor.2. The thermopile infrared sensor as in claim 1 , wherein the sensor cells of the plurality of sensor cells are connected in series claim 1 , in parallel or in a combination of series and parallel circuit to form the one output signal.3. The thermopile infrared sensor as in claim 1 , wherein the ...

Sensor and method for manufacturing a sensor

Sensor (100; 200), mit folgenden Merkmalen: einem Substrat (110); einer Membran (120; 220); einem ersten und einem zweiten Abstandshalter (130-1, 130-2), die auf dem Substrat (110) angeordnet sind; einer ersten Haltestruktur (140-1), die seitlich neben der Membran (120; 220) von dem ersten Abstandshalter (130-1) gehalten wird und eine erste Elektrode (150-1) auf einer dem Substrat (110) zugewandten ersten Hauptseite (122) der Membran (120; 220) kontaktiert; und einer zweiten Haltestruktur (140-2), die seitlich neben der Membran (120; 220) von dem zweiten Abstandshalter (130-2) gehalten wird und eine zweite Elektrode (150-2) auf einer der ersten Hauptseite (122) gegenüberliegenden zweiten Hauptseite (124) der Membran (120; 220) kontaktiert, so dass die Membran (120; 220) über den ersten und zweiten Abstandshalter (130-1, 130-2) aufgehängt und mit Kontaktflächen (112-1, 112-2) des Substrats (110) elektrisch verbunden ist; wobei die Membran (120; 220) einen pn-Übergang (222) aufweist, der sich parallel zu einer Oberfläche des Substrats (110) erstreckt, so dass der pn-Übergang (222) seriell zwischen die Kontaktflächen (112-1, 112-2) des Substrats (110) geschaltet ist. Sensor (100; 200) having the following features: a substrate (110); a membrane (120; 220); first and second spacers (130-1, 130-2) disposed on the substrate (110); a first holding structure (140-1) which is held laterally next to the membrane (120; 220) by the first spacer (130-1) and a first electrode (150-1) on a first main side (110) facing the substrate (110) 122) the membrane (120; 220) contacted; and a second holding structure (140-2) which is held laterally next to the membrane (120; 220) by the second spacer (130-2) and a second electrode (150-2) on a second opposite side of the first main side (122) Main side (124) of the membrane (120; 220) contacted so that the membrane (120; 220) is suspended over the first and second spacers (130-1, 130-2) and with contact surfaces (112-1, 112-2) the substrate ...

检测装置、传感设备以及电子设备

本发明提供一种检测装置、传感设备以及电子设备。其中，该检测装置包括：串联连接在检测节点和第一电源节点之间的第一热电元件～第n(n为大于等于2的整数)热电元件、与上述检测节点连接的检测电路以及进行分别设定上述第一热电元件～上述第n热电元件的极化方向的极化处理的极化电路。

Device having a membrane structure for detecting thermal radiation, method of production and use of the device

본 발명은 상기 열 복사를 전기 신호로 변환하기 위한 하나 이상의 열 검출기 소자가 배열되는 하나 이상의 막, 및 상기 막을 지지하고 상기 전기 신호를 판독하는 하나 이상의 판독 회로를 지지하여, 상기 검출기 소자와 상기 판독 회로가 전기 도통 접속에 의해 상기 막을 통해 전기 접속되는 하나 이상의 회로 지지대를 포함하는 열 복사 검출 장치에 관한 것이다. 또한, 본 발명은 a) 상기 검출기 소자를 갖춘 막과 하나 이상의 전기 도통 접속을 제공하고 상기 회로 지지대를 준비하는 단계와, b) 상기 검출기 소자와 판독 회로가 상기 막을 통과하는 전기 접속에 의해 함께 전기적으로 연결되는 방식으로 상기 막과 회로 지지대를 결합하는 단계를 포함하는 열 복사 검출 장치 제조 방법에 관한 것이다. 제조 단계는 바람직하게 웨이퍼 레벨에서 수행되며, 기능화된 실리콘 기판이 서로에 대해 적층되어 서로 단단히 접합된 후에 개별 소자로 분할된다. 바람직하게, 검출기 소자는 파이로-전기 검출기 소자를 포함한다. 상기 장치는 모션 검출기, 프레전스 검출기 및 열 영상 카메라 분야에 적용될 수 있다. The present invention provides a thermal imaging system comprising at least one film on which one or more thermal detector elements are arranged for converting the thermal radiation into an electrical signal and one or more readout circuits for supporting the film and reading the electrical signals, And at least one circuit support to which the circuit is electrically connected through the film by means of an electrical connection. The present invention also provides a method of manufacturing a semiconductor device, comprising the steps of: a) providing at least one electrical connection with a film having the detector element and providing the circuit support; b) And combining the membrane and the circuit support in such a manner that the membrane and the circuit support are connected to each other. The manufacturing steps are preferably performed at the wafer level, and the functionalized silicon substrates are divided into individual elements after being laminated to each other and tightly bonded to each other. Preferably, the detector element comprises a pyroelectric detector element. The apparatus can be applied to the field of motion detectors, presence detectors and thermal imaging cameras.

Bolometer fluid flow and temperature sensor

传感器包括参考辐射热计和多个感测辐射热计。每一个感测辐射热计邻近于参考辐射热计布置。每一个辐射热计包括（i）衬底，（ii）连接到衬底的盖结构，盖结构配置成限定盖结构的内表面与衬底的第一表面之间的腔体，（iii）连接衬底并且布置在腔体内的吸收器，吸收器配置成吸收腔体内的红外辐射，以及（iv）连接到吸收器并且配置成提供指示由吸收器吸收的红外辐射量的信号的读出电路。参考辐射热计的盖结构阻挡红外辐射从盖结构的外部进入腔体。每一个感测辐射热计的盖结构允许红外辐射从盖结构的外部进入腔体。

Die temperature sensors

The invention provides a sensor array having a plurality of sensor elements formed in a first substrate and having a plurality of die temperature sensors located thereabout. Each of the die temperature sensors are configured to provide an output related to the temperature of the die on which they are located, the sensor elements providing an output indicative of the intensity of radiation incident thereon.

Thermal sensor with thermal barrier

The invention provides a sensor element formed in a first substrate and having a thermal barrier disposed between the sensor element and a heat source provided elsewhere on the first substrate. The thermal barrier includes at least one pair of trenches formed within the first substrate, individual trenches of the pair being separated by a cavity.

Sensor

The invention provides a sensor including a first sensor element formed in a first substrate and at least one optical element formed in a second substrate, the first and second substrates being configured relative to one another such that the second substrate forms a cap over the first sensor element, the at least one optical element being configured to guide incident radiation on the cap to the first sensor element. The sensor also includes a reference sensor element whose output can be used to reference the output of the first sensor element.

Die temperature sensors

The invention provides a sensor array having a plurality of sensor elements formed in a first substrate and having a plurality of die temperature sensors located thereabout. Each of the die temperature sensors are configured to provide an output related to the temperature of the die on which they are located, the sensor elements providing an output indicative of the intensity of radiation incident thereon.

Sensor

The invention provides a sensor including a first sensor element formed in a first substrate and at least one optical element formed in a second substrate, the first and second substrates being configured relative to one another such that the second substrate forms a cap over the first sensor element, the at least one optical element being configured to guide incident radiation on the cap to the first sensor element. The sensor also includes a reference sensor element whose output can be used to reference the output of the first sensor element.

Infrared light transmissivity for a membrane sensor

In conventional membrane infrared (IR) sensors, little to no attention has been paid toward transmissivity of IR near metal traces. Here, because the substrate of an integrated circuit carrying the sensor is used as a visible light filter, reflection of IR radiation back into the substrate can affect the operation and reliability of the IR sensor. As a result, an arrangement is provided that reduces the area occupied by metal lines by reducing the pitch and compacting the routing so as to reduce the effects from the reflection of IR radiation by metal traces.

Integrated light concentrator

An infrared sensor including an absorber for absorbing incident infrared power to produce a signal representing the temperature of a target object, a frame supporting a membrane which carries the absorber, the frame including a plurality of reflecting surfaces disposed about the circumference of an opening over which the membrane spans for reflecting incident infrared power toward the absorber. By concentrating incident infrared power through reflection, the temperature difference between the absorber and the surrounding frame is increased, thereby producing an increased electrical output from the sensor.

Microstructured infrared sensor

Die Erfindung betrifft einen Infrarot-Sensor, mit mindestens einer Mess-Struktur (11) aus z. B. einem Sensorchip (10), der eine Mess-Struktur (11) aufweist, und einem Kappenchip (20), der auf dem Sensorchip (10) befestigt ist und mit dem Sensorchip (10) einen Sensorraum (23) definiert, DOLLAR A wobei auf der Oberseite (24) des Kappenchips (20) eine Blende (25, 32) mit einem inneren Blendenbereich (25b, 32b) und einem den inneren Blendenbereich (25b, 32b) umgebenden äußeren Blendenbereich (25a, 32a) ausgebildet ist, DOLLAR A wobei der innere Blendenbereich (25b, 32b) oberhalb der Mess-Struktur (11) ausgebildet ist und für zu detektierende Infrarot-Strahlung (IR1) transparent ist und der äußere Blendenbereich (25a, 32a) für einfallende Infrarot-Strahlung (IR2) zumindest teilweise intransparent ist. DOLLAR A Hierbei kann der äußere Blendenbereich insbesondere als reflektive Beschichtung aus Metall oder einer dielektrischen Schicht, als reflektierende Strukturierung durch Gräben mit schrägen Flächen oder absorbierende Strukturierung ausgebildet sein. The invention relates to an infrared sensor, with at least one measuring structure (11) of z. B. a sensor chip (10) having a measuring structure (11), and a cap chip (20) which is mounted on the sensor chip (10) and with the sensor chip (10) defines a sensor space (23), DOLLAR A. wherein on the upper side (24) of the cap chip (20) a diaphragm (25, 32) with an inner diaphragm area (25b, 32b) and an inner diaphragm area (25b, 32b) surrounding the outer diaphragm area (25a, 32a) is formed DOLLAR A wherein the inner diaphragm region (25b, 32b) is formed above the measuring structure (11) and is transparent to infrared radiation (IR1) to be detected and the outer aperture region (25a, 32a) for incident infrared radiation (IR2) at least partially intransparent. DOLLAR A Here, the outer panel region may be formed in particular as a reflective coating of metal or a dielectric layer, as a reflective structuring by trenches with ...

A sensor including a reference sensor element

本发明提供了一种电磁辐射传感器，具有形成在第一衬底中的第一和第二传感器元件和形成在第二衬底中的第一和第二盖，第一和第二衬底彼此相对布置以使得第一和第二传感器元件的每个具有提供于其上方的相应的盖，从而提供独立的第一和第二单元，各单元分开形成，各单元的加盖用于限定各传感器上方的受控体积，其中第一单元提供基于第一响应特征的输出，和第二单元提供基于第二响应特征的输出。

Thermal sensor with increased sensitivity

本发明提供了一种热传感器，具有第一(1120，1125)和第二温度感应元件，每个都形成在第一衬底(110)中的热隔离台(1100)上。

Thermal infrared sensor array in wafer level package

Infrared sensor

红外线传感器(1)包括基底(10)、以及在基底(10)的表面上形成的红外线检测元件(3)。红外线检测元件(3)包括薄膜形式的被配置为吸收红外线的红外线吸收构件(33)、以及被配置为测量红外线吸收构件(33)与基底(10)之间的温度差的温度检测构件(30)。温度检测构件(30)包括：在红外线吸收构件(33)和基底(10)上形成的p型多晶硅层(35)，在红外线吸收构件(33)和基底(10)上形成而不与p型多晶硅层(33)接触的n型多晶硅层(34)，以及被配置为将p型多晶硅层(35)电连接到n型多晶硅层(34)的连接层(36)。p型多晶硅层(35)和n型多晶硅层(34)中的每一个具有10 18 到10 20 cm -3 范围内的杂质浓度。p型多晶硅层(35)具有λ/4n 1p 的厚度，其中，λ表示要由红外线检测元件(3)检测的红外线的中心波长，n 1p 表示p型多晶硅层(35)的反射率。n型多晶硅层(34)具有λ/4n 1n 的厚度，其中，n 1n 表示n型多晶硅层(34)的反射率。

Infrared sensor

적외선 센서(1)는 베이스(10), 및 상기 베이스(10)의 표면 위에 형성된 적외선 검출 소자(3)를 포함한다. 상기 적외선 검출 소자(3)는 적외선을 흡수하도록 구성된 박막 형태의 적외선 흡수체(33), 상기 적외선 흡수체(33)와 상기 베이스(10)의 온도차를 측정하도록 구성된 감온체(30), 및 보상막(39)을 포함한다. 상기 적외선 검출 소자(3)는 열 절연을 위해 상기 베이스(10)의 표면으로부터 간격을 두고 배치되어 있다. 상기 감온체(30)는 상기 적외선 흡수체(33)와 상기 베이스(10)에 걸쳐 형성된 p형 폴리실리콘층(35), 상기 p형 폴리실리콘층(35)과 접촉하지 않고 상기 적외선 흡수체(33)와 상기 베이스(10)에 걸쳐 형성된 n형 폴리실리콘층(34), 및 상기 p형 폴리실리콘층(35)과 상기 n형 폴리실리콘층(34)을 전기적으로 접속하도록 구성된 접속층(36)을 포함한다. 상기 보상막(39)은 상기 적외선 흡수체(33)에 있어 상기 베이스(10)와는 반대측의 면인 적외선 입사면 상에 상기 적외선 입사면을 덮도록 형성된 폴리실리콘층이다.

Infrared temperature sensor, circuit board, and apparatus using infrared temperature sensor

検知対象物の測定部を効果的に特定でき、小型化が可能な表面実装型の赤外線温度センサを提供する。表面実装型の赤外線温度センサ１であって、一面側に開口部２１ａを有し、赤外線を導くように形成された導光部２１と、一面側に遮蔽壁２２ａを有し、赤外線を遮蔽するように形成された遮蔽部２２とを備えた熱伝導性を有する本体２と、前記本体２の他面側に配設された基板３と、前記基板３上に配置され、前記導光部２１に対応する位置に配設された赤外線検知用感熱素子４と、前記基板３上に、前記赤外線検知用感熱素子４と離間して配置され、前記遮蔽部２２に対応する位置に配設された温度補償用感熱素子５と、前記基板２上に形成され、前記赤外線検知用感熱素子４及び前記温度補償用感熱素子５に接続された配線パターン３１と、前記配線パターン３１に接続されるとともに、前記基板３上の端部側に形成された実装用端子３２とを備えている。 Provided is a surface-mount type infrared temperature sensor that can effectively specify a measurement part of a detection target and can be miniaturized. A surface-mount type infrared temperature sensor 1, which has an opening 21a on one surface side, a light guide portion 21 formed to guide infrared rays, and a shielding wall 22a on one surface side, and shields infrared rays. A main body 2 having thermal conductivity provided with a shielding portion 22 formed as described above, a substrate 3 disposed on the other surface side of the main body 2, and disposed on the substrate 3. The infrared detecting thermal element 4 disposed at a position corresponding to the infrared detecting thermal element 4 is disposed on the substrate 3 so as to be spaced apart from the infrared detecting thermal element 4 and disposed at a position corresponding to the shielding portion 22. A temperature-compensating thermal element 5, a wiring pattern 31 formed on the substrate 2 and connected to the infrared detecting thermal element 4 and the temperature-compensating thermal element 5, and connected to the wiring pattern 31; Mounting terminals formed on the end side on the substrate 3 And a 2.

Polarization selective, frequency selective, and wide dynamic range detectors, imaging arrays, readout integrated circuits, and sensor systems

This relates to sensor systems, detectors, imagers, and readout integrated circuits (ROICs) configured to selectively detect one or more frequencies or polarizations of light, capable of operating with a wide dynamic range, or any combination thereof. In some examples, the detector can include one or more light absorbers; the patterns and/or properties of a light absorber can be configured based on the desired measurement wavelength range and/or polarization direction. In some examples, the detector can comprise a plurality of at least partially overlapping light absorbers for enhanced dynamic range detection. In some examples, the detector can be capable of electrostatic tuning for one or more flux levels by varying the response time or sensitivity to account for various flux levels. In some examples, the ROIC can be capable of dynamically adjusting at least one of the frame rate integrating capacitance, and power of the illumination source.

Solid-state imaging device and manufacturing method thereof

Infrared detecting device

A large-area high-output infrared detecting device S is realized in which a heat-separation-structure diaphragm 2 made of a thermal insulating material is formed through a cavity 7 from a silicon substrate 1, a thermocouple 4 serving as an infrared detection section is formed on the diaphragm 2, a heat absorption area 5 is formed on the thermocouple 4 through insulation layers 3 a and 3 b so as to have an etching aperture 9 for forming a cavity in the heat absorption area 5, and the cavity 7 is formed in a short time without being influenced by the size of the heat absorption area 5 to secure a structural strength.

CMOS integrated method for fabrication of thermopile pixel on semiconductor substrate with buried insulation regions

A method for manufacturing an imaging device in a semiconductor substrate is disclosed. The substrate includes a first surface, a second surface substantially opposite the first surface, and a thickness defined by a distance between the first surface and the second surface. A trench is fabricated in the semiconductor substrate first surface. A passivation layer is applied over the substrate first surface and the trench, optionally filling the trench by depositing a conformal layer over the substrate first surface. The conformal layer and the passivation layer are planarized from the substrate first surface, and a membrane is fabricated on the substrate first surface. From the substrate second surface, a cavity is formed in the substrate abutting the membrane and at least a portion of the trench via the unmasked region.

Temperature sensor with infrared absorbing thin film containing metamaterial structure

Light source for gas sensor

Source de lumière infrarouge (1, 1')pour capteur de gaz, comportant une membrane (30) reliée à un substrat par au moins deux bras de jonction, la source de lumière comportant une piste conductrice (200, 300), s'étendant entre deux plots de connexion (11, 12), disposés sur le substrat, le long d'au moins deux bras de jonction (21, 22, 23, 24), et à travers la membrane, la piste conductrice étant configurée pour produire un échauffement de la membrane lorsqu'elle est parcourue par un courant électrique ; la membrane comportant : une couche support (30a, 30c), formée d'au moins un matériau diélectrique ; une couche de répartition (31), thermiquement conductrice, configurée pour répartir spatialement l'échauffement de la membrane ; la membrane présentant un diamètre ou étant inscrite dans un diamètre inférieur à 1 mm; la source de lumière étant caractérisée en ce que : la piste conductrice (200, 300) forme, entre les plots de connexion, au moins deux branches (231, 232, 301, 302) et au plus quatre branches conductrices disposées en parallèle, chaque branche formant une résistance électrique. Figure d'abrégé : figure 2C

PYROELECTRIC DETECTION DEVICE WITH STRESS SUSPENDED MEMBRANE

Dispositif (100) de détection pyroélectrique, comprenant au moins : - une membrane (104) suspendue ; - un élément (112) de détection pyroélectrique disposé sur la membrane suspendue et comprenant au moins une portion (116) de matériau pyroélectrique disposée entre des première et deuxième électrodes (114, 118), la première électrode (114) étant disposée entre la portion de matériau pyroélectrique et la membrane suspendue ; et dans lequel la membrane et l'élément de détection pyroélectrique sont soumis à une contrainte compressive plus importante qu'une contrainte limite de flambage de la membrane et de l'élément de détection pyroélectrique et forment ensemble une structure bistable. Device (100) for pyroelectric detection, comprising at least: - a suspended membrane (104); - a pyroelectric detection element (112) disposed on the suspended membrane and comprising at least one portion (116) of pyroelectric material disposed between first and second electrodes (114, 118), the first electrode (114) being disposed between the portion of pyroelectric material and the suspended membrane; and wherein the membrane and the pyroelectric sensing element are subjected to a compressive stress greater than a limiting buckling stress of the membrane and the pyroelectric sensing element and together form a bistable structure.

BOLOMETRIC DETECTOR WITH GUIDE MODE FILTER MATRIX.

BLIND INFRARED IMAGING MICRO-BOLOMETER AND RELATED METHODS

Ce micro-bolomètre aveugle d’imagerie infrarouge (10b) comprend :– un substrat définissant un plan de substrat ; – une membrane (14), comportant au moins deux électrodes et un élément thermo-résistif, montée en suspension au-dessus dudit substrat, la membrane (14) s’étendant selon un plan de membrane parallèle audit plan de substrat ;– un écran d’occultation (19) disposé au-dessus de la membrane (14) de sorte à bloquer les rayonnements infrarouges incidents ; l’écran d’occultation (19) s’étendant selon un plan d’occultation parallèle au plan de substrat et au plan de membrane ; ledit écran d’occultation (19) étant monté en suspension au-dessus de la membrane (14) et du substrat au moyen d’une structure porteuse fixée sur le substrat ; la structure porteuse comportant au moins une paroi latérale ; et– au moins un évent de libération (32a) destiné à permettre le retrait d’au moins une couche sacrificielle mise en œuvre lors du procédé de fabrication dudit micro-bolomètre aveugle (10b). Ledit au moins un évent de libération (32a) est ménagé dans ladite au moins une paroi latérale de sorte à permettre un retrait d’au moins une couche sacrificielle selon une direction (Dr) parallèle aux plans de substrat, de membrane et d’occultation. Figure pour l’abrégé : Fig 2 This infrared imaging blind micro-bolometer (10b) comprises:– a substrate defining a substrate plane; - a membrane (14), comprising at least two electrodes and a thermo-resistive element, mounted in suspension above said substrate, the membrane (14) extending along a membrane plane parallel to said substrate plane; - a screen screen (19) disposed above the membrane (14) so as to block incident infrared radiation; the blackout screen (19) extending along a blackout plane parallel to the substrate plane and the membrane plane; said blackout screen (19) being mounted in suspension above the membrane (14) and the substrate by means of a support structure fixed to the substrate; the support structure comprising at ...

THERMAL RADIATION DETECTION SENSOR AND METHOD FOR MANUFACTURING SAME

Capteur à structure monolithique intégrée pour la détection de rayonnement thermique comportant un substrat de support (1), une cavité (8) et des éléments de capteurs (3) pour la détection du rayonnement thermique. Le rayonnement thermique incident (11) traverse le substrat de support (1) pour arriver sur l'élément de capteur (3). L'élément de capteur (3) est suspendu dans la cavité (8) par des suspensions (6, 13', 14') assurant également le branchement électrique des éléments de capteurs. L'invention concerne également le procédé de fabrication de ce capteur. Integrated monolithic structure sensor for thermal radiation detection comprising a support substrate (1), a cavity (8) and sensor elements (3) for the detection of thermal radiation. The incident thermal radiation (11) passes through the support substrate (1) to reach the sensor element (3). The sensor element (3) is suspended in the cavity (8) by suspensions (6, 13 ', 14') also providing the electrical connection of the sensor elements. The invention also relates to the method of manufacturing this sensor.

Method for manufacturing a detection device comprising an encapsulation structure comprising a thin opaque layer resting on a mineral peripheral wall

L’invention porte sur un procédé de fabrication d’un dispositif de détection (1) comportant les étapes de : réalisation de détecteurs thermiques répartis en une matrice de détection (2p) et une matrice de compensation (2s) au moyen de couches sacrificielles minérales (41, 42) ; réalisation d’une structure d’encapsulation (30s) comportant une couche mince opaque (33) s’étendant au-dessus de la matrice de compensation (2s) ; suppression partielle des couches sacrificielles minérales (41, 42) par gravure chimique humide en milieu acide, de manière à libérer la matrice de détection (2p) et la matrice de compensation (2s), et à obtenir une paroi périphérique (31s) alors formée d’une portion non gravée des couches sacrificielles minérales (41, 42) et entourant la matrice de compensation (2s), la couche mince opaque (33) étant alors suspendue au-dessus de la matrice de compensation (2s) et reposant sur la paroi périphérique. Figure pour l’abrégé : Fig.1E The invention relates to a method for manufacturing a detection device (1) comprising the steps of: producing thermal detectors divided into a detection matrix (2p) and a compensation matrix (2s) by means of mineral sacrificial layers (41, 42); providing an encapsulation structure (30s) comprising a thin opaque layer (33) extending above the compensation matrix (2s); partial removal of the mineral sacrificial layers (41, 42) by wet chemical etching in an acid medium, so as to release the detection matrix (2p) and the compensation matrix (2s), and to obtain a peripheral wall (31s) then formed of a non-etched portion of the mineral sacrificial layers (41, 42) and surrounding the compensation matrix (2s), the thin opaque layer (33) then being suspended above the compensation matrix (2s) and resting on the peripheral wall. Figure for abstract: Fig.1E

Method for manufacturing a detection device comprising a peripheral wall made of mineral material

본 발명은 하기 단계를 포함하는 검출 디바이스(1)의 제조 방법에 관한 것이며, 이하의 단계를 포함한다: 희생 미네랄 층(61, 62)을 사용하여 열 검출기(20) 및 캡슐화 구조(30)의 생성 단계; 열 검출기(20)를 노출시키고 주변 벽(32)을 획득하도록 그리고 캡슐화 박층(31)의 상부 부분(31.1)을 노출시키도록 습식 화학적 산 에칭을 사용하여 희생 미네랄 층(61, 62)의 부분적 제거 단계로서, ·이때, 주변 벽(32)은 판독 기판(10)과 상부 부분(31.1) 사이에서 공동(2)의 수직 확장으로서 자체를 드러내는 측방향 리세스를 나타내며, 이 측방향 리세스는 중간 영역(Zr)을 획정하는, 단계; 열 검출기(20) 어레이 둘레의 중간 영역(Zr)에 배열된 보강 필라(31.2)의 생성 단계.

DEVICE FOR MEASURING A THERMAL FLOW

Infrared ray imaging element and infrared ray imaging device

Disclosed are an infrared ray imaging element and an infrared ray imaging device, both of which can reduce noises. Specifically disclosed are multiple detector pixels which are arranged in a matrix state on a semiconductor substrate and can detect an incidence infrared ray. Each of the detector pixels comprises: a first thermoelectric conversion section which comprises a first infrared ray absorption film capable of absorbing the incidence infrared ray and converting the absorbed incidence infrared ray into heat and a first thermoelectric conversion element capable of converting the heat converted by the first infrared ray absorption film into an electric signal; multiple detector pixels (12); a second thermoelectric conversion section which comprises a second infrared ray absorption film arranged on the semiconductor substrate and capable of absorbing the incidence infrared ray and converting the absorbed incidence infrared ray into heat and a second thermoelectric conversion element capable of converting the heat converted by the second infrared ray absorption film into an electric signal; and a first parasol section (210) which comprises a third infrared ray absorption film arranged apart from the second thermoelectric conversion section so as to cover the second thermoelectric conversion section and capable of absorbing the incidence infrared ray and a joint section arranged on the semiconductor substrate and capable of joining the third infrared ray absorption film to the semiconductor substrate.

Thermal sensor with increased sensitivity

The invention provides a thermal sensor having a first and second temperature sensing elements each being formed on a thermally isolated table in a first substrate.

Infrared thermal sensor with good snr

적외선을 검출하기 위한 적외선 열 센서(10)에 있어서, 상기 적외선 열 센서는, 밀봉된 캐비티(3)를 함께 형성하는 기판(1) 및 캡 구조(2) - 상기 캐비티는 기설정된 압력에서 가스 조성을 포함함 - 과, 윈도우나 어퍼처(22)를 통해 적외선(IR)을 수신하기 위해 상기 캐비티(3) 내에 배치된 멤브레인(4)과, 상기 멤브레인(4)을 매달리게 하기 위한 복수의 들보(5)와, 입사 적외선에 의해 의한 상기 멤브레인(4)과 기판(1)간의 온도차(ΔT)를 측정하기 위하여, 상기 복수의 들보(5) 상에 배열된 복수의 열전대(6)를 포함하되, 열전대(6)를 통한 멤브레인(4)과 기판(1)간의 열저항(RT1)과 들보와 가스 조성을 통한 멤브레인(4)과 기판(1)간의 열 저항(RT2)의 비율은 0.8 내지 1.2 범위 내의 값인 것을 특징으로 한다. 이러한 센서(10)를 설계하는 방법 및 이러한 센서를 생성하는 방법도 개시된다. An infrared heat sensor (10) for detecting infrared radiation, said infrared heat sensor comprising: a substrate (1) and a cap structure (2) together forming a sealed cavity (3) (4) arranged in the cavity (3) for receiving infrared rays (IR) through a window or aperture (22), and a plurality of beams (5) for suspending the membrane And a plurality of thermocouples (6) arranged on the plurality of beams (5) for measuring a temperature difference (? T) between the membrane (4) and the substrate (1) by incident infrared radiation, The ratio of the thermal resistance RT1 between the membrane 4 and the substrate 1 through the substrate 6 and the thermal resistance RT2 between the membrane 4 and the substrate 1 through the beam and gas composition is in the range of 0.8 to 1.2 . A method of designing such a sensor 10 and a method of generating such a sensor are also disclosed.

Tunable finesse infrared cavity thermal detectors

A cavity thermal detector assembly is presented that allows both tunable narrowband and broadband operation. This allows for high light efficiency, low thermal time constant, and flexibility in designing the optical path. The thermal detector/filter layers are part of the top mirror or mirrors of a Gires-Tournois-type optical cavity and provide absorption and reflection that can be adjusted to the desired width and position of the detected band. Tuning, if desired, can be achieved by applying micromechanical methods. Broadband operation may be achieved by bringing the sensor close to the bottom mirror. In this mode, the sensor or its supports may or may not touch over a small area.

Method for manufacturing a detection device comprising a peripheral wall made of a mineral material

L’invention porte sur un procédé de fabrication dispositif de détection (1) comportant les étapes suivantes : réalisation de détecteurs thermiques (20) et d’une structure d’encapsulation (30) au moyen de couches sacrificielles minérales (61, 62) ; suppression partielle des couches sacrificielles minérales (61, 62), par gravure chimique humide en milieu acide, de manière à libérer les détecteurs thermiques (20) et à obtenir une paroi périphérique (32), et à libérer une portion supérieure (31.1) de la couche mince d’encapsulation (31) ; la paroi périphérique (32) présentant alors un retrait latéral se traduisant par un élargissement vertical de la cavité (2), entre le substrat de lecture (10) et la portion supérieure (31.1), ce retrait latéral définissant une zone intermédiaire (Zr) ; réalisation de piliers de renfort (31.2), agencés dans la zone intermédiaire (Zr) autour de la matrice de détecteurs thermiques (20). Figure pour l’abrégé : Fig. 2F The invention relates to a method of manufacturing a detection device (1) comprising the following steps: producing thermal detectors (20) and an encapsulation structure (30) using mineral sacrificial layers (61, 62); partial removal of the mineral sacrificial layers (61, 62), by wet chemical etching in an acid medium, so as to free the thermal detectors (20) and to obtain a peripheral wall (32), and to free an upper portion (31.1) of the thin encapsulation layer (31); the peripheral wall (32) then having a lateral shrinkage resulting in a vertical widening of the cavity (2), between the reading substrate (10) and the upper portion (31.1), this lateral shrinkage defining an intermediate zone (Zr) ; production of reinforcing pillars (31.2), arranged in the intermediate zone (Zr) around the matrix of thermal detectors (20). Figure for abstract: Fig. 2 F

SMD-compatible Thermopile infrared sensor

Die Erfindung betrifft einen SMD-fähigen Thermopile Infrarot Sensor zur berührungslosen Temperaturmessung, als Hot-Spot oder zur Gestendetektion, mit mindestens einem miniaturisierten Thermopilepixel auf einem monolithisch integrierten Sensorchip, der in einem hermetisch verschlossenen Gehäuse, bestehend aus zumindest teilweise nichtmetallischen Gehäusesubstrat und einem Gehäusedeckel, untergebracht ist, wobei sich im Gehäuse ein Gas- oder Gasgemisch befindet. Durch die Erfindung soll ein miniaturisierter oberflächenmontierbarer Thermopile Infrarot Sensor angegeben werden, der insbesondere in z-Richtung eine besonders geringe Bauhöhe aufweist. Erreicht wird das dadurch, dass im Gehäusedeckel (3) gegenüber dem oder den Thermopilepixeln (29) eine Aperturöffnung (26) eingebracht ist, die mit einer fokussierenden Linse (4) verschlossen ist, welche die Strahlung von Objekten auf das oder die Thermopilepixel (29) auf dem Gehäusesubstrat (1) fokussiert, dass auf dem selben Sensorchip (2) neben den Thermopilepixeln (29) eine Signalverarbeitungseinheit (12) integriert ist und wobei die gesamte Gehäusehöhe (1) und Gehäusedeckel (3) höchstens 3 mm oder weniger als 2,5 mm beträgt.

Infrared detector manufacturing method

Thermopile infrared individual sensor for measuring temperature or detecting gas

The invention relates to a thermopile infrared individual sensor in a housing that is filled with a gaseous medium having optics and one or more sensor chips with individual sensor cells with infrared sensor structures with reticulated membranes, the infrared-sensitive regions of which are spanned by, in each case, at least one beam over a cavity in a carrier body with good thermal conduction. The object of the invention consists of specifying a thermopile infrared sensor using monolithic Si-micromechanics technology for contactless temperature measurements, which, in the case of a sufficiently large receiver surface, outputs a high signal with a high response speed and which can operated in a gaseous medium with normal pressure or reduced pressure and which is producible in mass produced numbers without complicated technology for sealing the housing. This is achieved by virtue of, in each case, combining a plurality of individual adjacent sensor cells (18) with respectively one infrared-sensitive region with thermopile structures (14, 15) on the membrane (12) on a common carrier body (1) of an individual chip to a single thermopile sensor structure with a signal output in the housing, consisting of a cap (12) sealed with a base plate (3) with a common gaseous medium (10).

Infrared sensor

Light detector

A light detector includes: a substrate; and a membrane which is supported on a surface of the substrate so that a space is formed between the surface of the substrate and the membrane, in which the membrane includes a first wiring layer and a second wiring layer which are opposite each other with a gap extending along a line interposed therebetween, a resistance layer which is electrically connected to each of the first wiring layer and the second wiring layer and has an electric resistance depending on a temperature, a light absorption layer which is opposite to the surface of the substrate, and a separation layer which is disposed between each of the first wiring layer and the second wiring layer and the light absorption layer, and in which the light absorption layer includes a first region which spreads to the side opposite to the second wiring layer with respect to the first wiring layer when viewed from the thickness direction of the substrate and a second region which spreads to the side opposite to the first wiring layer with respect to the second wiring layer when viewed from the thickness direction of the substrate.

Die temperature sensors

本发明提供了一种传感器阵列，具有在第一衬底中形成的多个传感器元件和位于其周围的多个芯片温度传感器。每个芯片温度传感器构造成提供与它们所在芯片的温度相关的输出，传感器元件提供指示入射其上的辐射强度的输出。

Polarization selective, frequency selective, and wide dynamic range detectors, imaging arrays, readout integrated circuits, and sensor systems

This relates to sensor systems, detectors, imagers, and readout integrated circuits (ROICs) configured to selectively detect one or more frequencies or polarizations of light, capable of operating with a wide dynamic range, or any combination thereof. In some examples, the detector can include one or more light absorbers; the patterns and/or properties of a light absorber can be configured based on the desired measurement wavelength range and/or polarization direction. In some examples, the detector can comprise a plurality of at least partially overlapping light absorbers for enhanced dynamic range detection. In some examples, the detector can be capable of electrostatic tuning for one or more flux levels by varying the response time or sensitivity to account for various flux levels. In some examples, the ROIC can be capable of dynamically adjusting at least one of the frame rate integrating capacitance, and power of the illumination source.

A sensor including a reference sensor element

The invention provides a sensor (800) including a first sensor element (105) formed in a first substrate (110) and at least one optical element formed in a second substrate (816), the first and second substrates being configured relative to one another such that the second substrate forms a cap over the first sensor element, the at least one optical element being configured to guide incident radiation on the cap to the first sensor element. The sensor also includes a reference sensor element (105) whose output can be used to reference the output of the first sensor element.

Electromagnetic radiation detection apparatus with reduced crosstalk

本发明涉及一种用于检测电磁辐射的检测装置(1)，包括衬底(2)、热检测器(10)的矩阵，每个热检测器(10)包括悬置的吸收膜(11)和反射层(14)。该检测装置(1)包括至少一个不透明竖直壁(31)，所述至少一个不透明竖直壁设置在衬底(2)上并且在相邻的两个热检测器(10)之间纵向延伸，并且由对于待检测的电磁辐射不透明的材料制成。

Infrared array sensor

该红外线阵列传感器具有衬底基板和多个像素部。衬底基板设有下凹部。像素部按照覆盖下凹部的方式被配置于衬底基板。上述像素部具有薄膜构造体、多个第一红外线吸收层和多个感温元件。上述薄膜构造体设有第一狭缝，上述第一狭缝将上述薄膜构造体分割成多个悬臂。上述悬臂在长度方向的一端具有第一端，在另一端具有第二端。上述感温元件被设于上述悬臂。感温元件构成为上上述感温元件的温度发生了变化时，输出与温度变化相应的输出信号。

A kind of low temperature radiometer blackbody chamber

本发明涉及光辐射测量领域，具体涉及一种低温辐射计黑体腔，包括由正圆锥侧面(6)、圆柱侧面(5)、斜底面(4)连接组成的腔体，正圆锥和圆柱的轴线(3)重合，正圆锥的母线与正圆锥的轴线形成夹角(1)；正圆锥的细端设有腔入射口径(7)，腔入射口径(7)所在平面与正圆锥的轴线(3)垂直；斜底面(4)与圆柱的轴线(3)之间形成夹角(2)。本发明采用斜底‑圆柱‑圆锥组合型腔体结构，圆锥形挡光设计可阻挡腔体外部杂散光，并减少腔体内部反射光溢出腔外，腔体内壁涂层采用纯镜面反射石墨烯材料，可减少光辐射在腔内的漫反射，温度分布相对集中，温度响应速度快。