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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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05-01-2012 дата публикации

Device for testing an integrated circuit and method for implementing same

Номер: US20120001088A1

Автор: Antonin Bougerol, Cecile Weulersse, Florent Miller, Patrick Heins, Samuel Hazo, Thierry Carriere

Принадлежит: Individual

The invention relates to a device for testing an integrated circuit. The device comprises a plate for receiving and subjecting the integrated circuit to a test. The plate comprises a component for powering and operating the integrated circuit and another component for measuring the operation of the integrated circuit during the test. The device also comprises an irradiation device for subjecting the circuit to a proton bombardment and a mask with a variable thickness provided between a bombardment access region on the integrated circuit and an established zone of the integrated circuit.

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Номер записи: 1

20-12-2016 дата публикации

Устройство мониторинга полупроводникового материала

Номер: RU0000167043U1

Автор: Александр Игоревич Смирнов, Владимир Григорьевич Буров, Евгений Валерьевич Прохоренко, Наталья Владимировна Плотникова

Принадлежит: Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Образования "Новосибирский Государственный Технический Университет"

Устройство мониторинга полупроводникового материала, включающее блок управления, блок измерения вольтамперной характеристики, блок электронной нагрузки, блок передачи данных, по меньшей мере, два блока коммутации, блок обработки и отображения информации, отличающееся тем, что оно снабжено блоком формирования и измерения параметров окружающей среды и камерой для размещения исследуемого полупроводникового материала, а блоки коммутации, управления и передачи данных выполнены в виде блока микропроцессорного управления, который соединен двухсторонней связью проводными или беспроводными каналами связи с блоком электронной нагрузки, блоком измерения вольтамперной характеристики, блоком обработки и отображения информации и блоком формирования и измерения параметров окружающей среды, камера для размещения исследуемого полупроводникового материала соединена проводными каналами связи с блоком электронной нагрузки, блоком измерения вольтамперной характеристики и блоком формирования и измерения параметров окружающей среды, а блок обработки и отображения информации выполнен в виде человекомашинного интерфейса. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (51) МПК G01R 31/26 (13) 167 043 U1 (2014.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ТИТУЛЬНЫЙ (21)(22) Заявка: ЛИСТ ОПИСАНИЯ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ 2015151223/28, 01.12.2015 (24) Дата начала отсчета срока действия патента: 01.12.2015 (45) Опубликовано: 20.12.2016 Бюл. № 35 1 6 7 0 4 3 R U (57) Формула полезной модели Устройство мониторинга полупроводникового материала, включающее блок управления, блок измерения вольтамперной характеристики, блок электронной нагрузки, блок передачи данных, по меньшей мере, два блока коммутации, блок обработки и отображения информации, отличающееся тем, что оно снабжено блоком формирования и измерения параметров окружающей среды и камерой для размещения исследуемого полупроводникового материала, а блоки коммутации, управления и передачи данных выполнены в виде блока микропроцессорного ...

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Номер записи: 2

25-11-2020 дата публикации

Установка для измерения времени жизни неосновных носителей заряда в базах полупроводниковых приборов

Номер: RU0000201072U1

Автор: Алексей Маратович Сурма, Виктор Семенович Костусяк, Владимир Викторович Верёвкин

Принадлежит: Акционерное общество "ПРОТОН-ЭЛЕКТРОТЕКС"

Полезная модель относится к области электротехники и может найти применение в устройствах для измерений электрофизических параметров полупроводниковых приборов. Технический результат заключается в возможности получения импульсов обратного тока с амплитудами, отношение которых точно равно е, независимо от параметров испытуемого полупроводникового прибора, что повышает точность измерений времени жизни неосновных носителей заряда. Установка содержит источник прямого напряжения 1 и транзисторный формирователь импульса прямого тока 2, источник обратного напряжения 8 и транзисторный формирователь импульса обратного тока 7. Положительный полюс источника прямого напряжения 1 через транзисторный формирователь прямого тока 2 соединен с входом параллельного ключа 3 и анодом развязывающего диода 4. Катод развязывающего диода 4 соединен с входом последовательного ключа 5, выход которого соединен с клеммой 6.1 для подключения анода испытуемого полупроводникового прибора и выходом транзисторного формирователя обратного тока 7, вход которого подключен к отрицательному полюсу источника обратного напряжения 8. Отрицательный полюс источника положительного напряжения 1, выход параллельного ключа 3 и положительный полюс источника отрицательного напряжения 8 через датчик тока 9 соединены с клеммой 6.2 для подключения катода испытуемого полупроводникового прибора. Выходы блока управления 10 подключены к управляющим входам транзисторных формирователей прямого и обратного тока 2 и 7 и управляющим входам параллельного и последовательного ключей 3 и 5. Измеритель временных интервалов 11 соединен с измерительными клеммами датчика тока 9 и с клеммами 6.1 и 6.2 для подключения испытуемого полупроводникового прибора. 1 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 201 072 U1 (51) МПК G01R 31/26 (2014.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК G01R 31/26 (2020.08) (21)(22) Заявка: 2020118550, 28.05.2020 (24) Дата начала отсчета срока ...

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Номер записи: 3

15-09-2021 дата публикации

Тестовая ячейка для контроля качества изготовления диодов шоттки на карбиде кремния

Номер: RU0000206535U1

Автор: Маргарита Юрьевна Котова, Николай Александрович Брюхно, Сергей Борисович Рыбалка

Принадлежит: Акционерное общество "ГРУППА КРЕМНИЙ ЭЛ"

Областью применения предлагаемой полезной модели является микроэлектроника, а именно контроль качества при производстве полупроводниковых приборов на основе кремния и карбида кремния. Результатом предлагаемой полезной модели является повышение и расширение возможностей оперативности контроля планарных элементов, повышающих напряжение пробоя на основе слаболегированных JTE-колец. Указанный технический результат достигается тем, что тестовая ячейка для контроля качества изготовления диодов Шоттки на карбиде кремния, состоящая из рабочего диода Шоттки, сформированного на эпитаксиальной структуре одного типа проводимости и содержащего охранную систему из колец другого типа проводимости, отличающаяся тем, что в ней дополнительно сформирован диод такой же конструкции, как и рабочий, у которого по всей площади контакта Шоттки сформирован участок другого типа проводимости глубиной равной глубине внутреннего кольца. 5 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 206 535 U1 (51) МПК H01L 21/66 (2006.01) G01R 31/26 (2014.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК G01R 31/26 (2021.05) (21)(22) Заявка: 2021106225, 10.03.2021 (24) Дата начала отсчета срока действия патента: Дата регистрации: (73) Патентообладатель(и): Акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" (RU) 15.09.2021 (45) Опубликовано: 15.09.2021 Бюл. № 26 2 0 6 5 3 5 R U (54) ТЕСТОВАЯ ЯЧЕЙКА ДЛЯ КОНТРОЛЯ КАЧЕСТВА ИЗГОТОВЛЕНИЯ ДИОДОВ ШОТТКИ НА КАРБИДЕ КРЕМНИЯ (57) Реферат: Областью применения предлагаемой полезной контроля качества изготовления диодов Шоттки модели является микроэлектроника, а именно на карбиде кремния, состоящая из рабочего диода контроль качества при производстве Шоттки, сформированного на эпитаксиальной полупроводниковых приборов на основе кремния структуре одного типа проводимости и и карбида кремния. Результатом предлагаемой содержащего охранную систему из колец другого полезной модели является повышение и типа проводимости, отличающаяся тем ...

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Номер записи: 4

12-01-2012 дата публикации

Probe head of probe card and manufacturing method of composite board of probe head

Номер: US20120007627A1

Автор: Bang-Shun Liu, Che-Wei Lin, Horng-Kuang Fan, Mao-Fa Shen, Ming-Chi Chen, Ming-Chu Chueh

Принадлежит: MPI Corp

A probe head of vertical probe card and a manufacturing method of a composite board thereof are provided. The probe head includes guide plate, composite board, and probe pin. The composite board includes first board layer and second board layer which are laminated together by joining operation. The composite board further includes through hole which is made by drilling and passed all the way through the first board layer and the second board layer. The friction coefficient of the first board layer is less than that of the second board layer, and the thermal expansion coefficient of the second board layer is less than that of the first board layer. The probe pin is penetrated all the way through the through hole of the composite board. By this, friction between the probe pin and composite board is reduced so as to stabilize the position of the probe pin.

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Номер записи: 5

26-01-2012 дата публикации

Method and pattern carrier for optimizing inspection recipe of defect inspection tool

Номер: US20120019279A1

Автор: Chia-Jen Wang, Hsi-Hua Liu, Huai-Te Huang, Jen-Po Huang, Pong-Wey Huang, Shuen-Cheng Lei

Принадлежит: United Microelectronics Corp

A method for optimizing an inspection recipe of a defect inspection tool is described. A substrate having thereon intentional defects and locating patterns beside the intentional defects is provided. The defect inspection tool is used to detect the intentional defects with an inspection recipe and obtain the distribution of undetected or partially detected intentional defects. The locating patterns are utilized to locate the undetected or partially detected intentional defects and thereby determine the type(s) of the undetected or partially detected intentional defects. The inspection recipe is modified according to the type(s) of the undetected or partially detected intentional defects in a manner such that there is a minimal number of undetected or partially detected intentional defects under the inspection of the defect inspection tool.

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Номер записи: 6

26-01-2012 дата публикации

Determining the Degradation and/or Efficiency of Laser Modules

Номер: US20120020382A1

Автор: Alexander Killi, Martin Liermann, Rainer Flaig, Thomas Notheis

Принадлежит: Trumpf Laser Gmbh

A method for monitoring a laser system including a plurality of laser modules connected in series, there being connected in parallel to each laser module a bypass arrangement for bridging the corresponding laser module, includes determining a first laser power of the laser system with a plurality of laser modules operational; activating the bypass arrangement of at least one laser module so that at least one of the plurality of laser modules is bypassed; determining a second laser power of the laser system with the at least one of the plurality of laser modules bypassed; and monitoring the laser system based on a difference between the first and second laser power.

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Номер записи: 7

02-02-2012 дата публикации

Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies

Номер: US20120023730A1

Автор: Anna Litza, Douglas L. McKay, Erh-Kong Chieh, Fu Chiung Chong, Roman L. Milter, SHA Li, W.R. Bottoms

Принадлежит: Individual

Enhanced microfabricated spring contact structures and associated methods, e.g. such as for electrical contactors and interposers, comprise improvements to spring structures that extend from the substrate surface, and/or improvements to structures on or within the support substrate. Improved spring structures and processes comprise embodiments having selectively formed and etched, coated and/or plated regions, which are optionally further processed through planarization and/or annealment. Enhanced solder connections and associated processes provide a gap between substrates for componentry, and or improved manufacturing techniques using distributed spacers. Enhanced probe card assembly structures and processes provide improved planarization adjustment and thermal stability.

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Номер записи: 8

02-02-2012 дата публикации

On-chip testing using time-to-digital conversion

Номер: US20120025846A1

Автор: Erik Jan Marinissen, Nikolaos Minas

Принадлежит: Interuniversitair Microelektronica Centrum vzw IMEC

A method and system for testing the functionality of a through-silicon-via in an integrated circuit is disclosed. In one aspect, the functionality is tested by measuring its capacitance from one side only. The capacitance of the TSV can be determined by measuring a timing delay introduced in a measurement circuit due to the presence of the TSV. The timing delay is determined by comparing the timing of measurement signal from the measurement circuit with the timing of a reference signal provided by a reference circuit. The comparison is carried out using a digital timing measurement circuit, such as a time-to-digital converter.

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Номер записи: 9

02-02-2012 дата публикации

Detecting counterfeit electronic components using emi telemetric fingerprints

Номер: US20120030775A1

Автор: Andrew J. Lewis, Kenny C. Gross, Ramakrishna C. Dhanekula

Принадлежит: Oracle International Corp

One embodiment of the present invention provides a system that non-intrusively detects counterfeit components in a target computer system. During operation, the system collects target electromagnetic interference (EMI) signals generated by the target computer system using one or more antennas positioned in close proximity to the target computer system. The system then generates a target EMI fingerprint for the target computer system from the target EMI signals. Next, the system compares the target EMI fingerprint against a reference EMI fingerprint to determine whether the target computer system contains a counterfeit component.

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Номер записи: 10

23-02-2012 дата публикации

Inspection device of semiconductor integrated circuit, inspection method of semiconductor integrated circuit, and control program of inspection device of semiconductor integrated circuit

Номер: US20120043983A1

Автор: Nobuhiro Sawa, Toru Kume

Принадлежит: Renesas Electronics Corp

An inspection device of a semiconductor integrated circuit includes a drive unit that moves a probe card back and forth and from side to side, a storage unit that stores arrangement of the semiconductor integrated circuit and a shape of the pads, and a control unit that controls the drive unit. The control unit controls the drive unit, performs an apex detection processing pressing the probe pin to the semiconductor integrated circuit, detecting positions of the probe pin where conduction is detected or not detected, and calculating coordinates of one apex of a inspection pad from detected positions, and calculates central coordinates of the inspection pad from information of the shape of the inspection pad based on the coordinates of the apex of the inspection pad. The drive unit presses the probe pin to the calculated central coordinates of the inspection pad to perform inspection.

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Номер записи: 11

23-02-2012 дата публикации

Test Adapter and Method for Achieving Optical Alignment and Thermal Coupling Thereof With a Device Under Test

Номер: US20120043984A1

Автор: David J.K. Meadowcroft, Frank Yashar, Seng-Kum Chan

Принадлежит: Avago Technologies Fiber IP Singapore Pte Ltd

Independent assemblies are compliantly mounted to a force transfer mechanism to optically align and thermally couple a device under test (DUT) to a test apparatus. A first assembly includes an optical connector. The first assembly has an alignment feature and a first compliant interface. A second assembly includes a thermal control member and force transfer members coupled to a structure. A passage permits a portion of the arm of the first assembly to extend through the structure. The force transfer members provide respective seats for an additional compliant interface. The alignment feature engages a corresponding feature to align the optical connector with the DUT before the compliant interfaces compress under an external force. Compliant mounting of the assemblies accommodates manufacturing tolerances in the DUT so that contact forces on the DUT are relatively consistent and thereby enable consistent optical and thermal coupling between the test apparatus and the DUT.

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Номер записи: 12

01-03-2012 дата публикации

Schmitt trigger with test circuit and method for testing

Номер: US20120049875A1

Автор: Eric W. Tisinger, Mitchell A. Belser

Принадлежит: Individual

A Schmitt trigger circuit having a test circuit and method for testing are provided. The Schmitt trigger test circuit includes switches for reconfiguring the Schmitt trigger for testing by shorting the input and output terminals of an inverter and by opening a feedback path to allow the application of test voltages to the gates of feedback transistors coupled to the inverter. The method includes: directly connecting an input terminal of the inverter to an output terminal of the inverter; providing a first power supply voltage to the feedback transistors coupled to the inverter; measuring a first voltage at the input terminal; removing the first power supply voltage from the feedback transistors; providing a second power supply voltage to the feedback transistors. The test circuit and method reduce the test time by eliminating the need to ramp an input voltage while monitoring the output.

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Номер записи: 13

01-03-2012 дата публикации

Electronic device

Номер: US20120049885A1

Автор: Minoru Mukai, Tomoko Monda

Принадлежит: Individual

According to one embodiment, an electronic device includes a circuit board, an electronic component, a first pad formed on the circuit board, a second pad formed on the electronic component, a junction which connects the first pad and the second pad, and a detecting unit. The detecting unit detects an electric characteristic of a connection path that includes the junction and at least one of the first pad and the second pad. An insulator is formed in part of a contact area of at least one of the first pad and the second pad that is in contact with the junction.

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Номер записи: 14

08-03-2012 дата публикации

Socket for electrical parts

Номер: US20120058683A1

Автор: Satoru Suzuki, Shin Kobayashi, Yuki Ueyama

Принадлежит: Enplas Corp

A socket for an electrical part to prevent a bad electrical connection with a circuit by preventing a deformation of a tip of a contact pin. The contact pin of the present invention comprises one terminal contacts to a terminal of the electrical part and the other terminal contacts to the circuit. When a tip of the other terminal is pressed to a substrate under a state that first and second holes of first and second holding plates are shifted each other, an upper terminal of the held portion of the other terminal contacts to a lower surface of the second holding plate, and makes the second holding plate to separate from the first holding plate against a spring force of a urging member. At this time, the portion projecting from the lower surface of the first holding plate toward the substrate moves into the first hole.

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Номер записи: 15

22-03-2012 дата публикации

Microsprings Partially Embedded In A Laminate Structure And Methods For Producing Same

Номер: US20120068331A1

Автор: Eric Peeters, Eugene M. Chow

Принадлежит: Palo Alto Research Center Inc

At least one microspring has applied thereover a laminate structure to provide: mechanical protection during handling and wafer processing, a spring spacer layer, strengthening of the anchor between spring and substrate, provision of a gap stop during spring deflection, and moisture and contaminant protection. A fully-formed laminate structure may be applied over the microspring structure or a partly-formed laminate structure may be applied over the microspring structure then cured or hardened. The tip portion of the microspring may protrude through the laminate structure and be exposed for contact or may be buried within the contact structure. The laminate structure may remain in place in the final microspring structure or be removed in whole or in part. The laminate structure may be photolithographically patternable material, patterned and etched to remove some or all of the structure, forming for example additional structural elements such as a gap stop for the microspring.

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Номер записи: 16

29-03-2012 дата публикации

Measuring device for electrically measuring a flat measurement structure that can be contacted on one side

Номер: US20120074971A1

Автор: Alexander Krieg, Daniel Biro, Florian Clement, Markus Glatthaar, Michael Menkö, Stefan Rein

Принадлежит: Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV

A measuring device for electrically measuring a measurement structure that can be electrically contacted at one measuring side, in particular an optoelectronic element, such as a solar cell, including at least two contacting units for electrically contacting the measurement structure and at least one support element for supporting the measurement structure with the measuring side on the support element. It is essential that the measuring device includes at least one suction line for the connection to the suction unit and at least one suction opening that is connected in a fluid-conducting manner to the suction line, wherein the suction opening is arranged in and/or on the support element such that the measurement structure can be pressed against the support element by suctioning via the suction opening. When the measurement structure rests on the support element, the contacting unit can be pressed against the measuring side of the measurement structure for the electrical contacting thereof.

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Номер записи: 17

29-03-2012 дата публикации

Wafer probe station capable of actively controlling tilt of chuck and controlling method thereof

Номер: US20120074977A1

Автор: Hong-Jun Yang

Принадлежит: Semics Inc

The wafer probe station includes: a plurality of the pressure sensors; a tilt correction unit which is constructed with a plurality of actuators, a plurality of displacement sensors which are disposed at positions adjacent to the corresponding actuators and a microcomputer; and a control unit which allows the wafer to be come in contact with the probe card by lifting up a Z-axis stage by a predetermined overdriving amount, extracts the pressure values of the installation positions from the pressure sensors, calculates driving amounts of the actuators of the tilt correction unit by using the pressure values so that a uniform load is applied to the chuck, calculates X and Y directional displacement values w occurring according to a change in a tilt of the chuck, lifts down the Z-axis stage, and after that, corrects an eccentric load of the chuck by driving the actuators of the tilt correction unit according to the driving amounts, and controls movement of the XY-axis stage by using the X and Y directional displacement values w. Accordingly, it is possible to accurately sense an eccentric load occurring at the time of performing the overdriving, and it is possible to rapidly and accurately perform initial setting for the eccentric load by adjusting a tilt of the chuck, so that it is possible to reduce a read time of a testing process.

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Номер записи: 18

05-04-2012 дата публикации

Semiconductor test device, semiconductor test circuit connection device, and semiconductor test method

Номер: US20120081139A1

Автор: Atsushi Yoshida

Принадлежит: Fuji Electric Co Ltd

A semiconductor test device and method for sequentially carrying out tests including an AC test, DC test, and thermal resistance test on a power semiconductor device are provided. The semiconductor test device includes a holding unit that positions the power semiconductor device. Test units each generate a test signal for the power semiconductor device and determine a test result generated in response to the test signal. A connection unit switches between the test units and selectively connects the test units electrically to electrodes of the power semiconductor device. The connection unit is controlled such that the test units are sequentially connected to the power semiconductor device to perform a plurality of the tests. The connection unit may include parallel plate electrodes in proximity to each other across an insulating sheet. The parallel plate electrodes may connect the power semiconductor device to positive and negative power sources of the test unit.

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Номер записи: 19

05-04-2012 дата публикации

Method for Measuring Capacitances of Capacitors

Номер: US20120084033A1

Автор: Chih-Chiang Chang, Chu-Fu Chen, Min-Tar LIU, Ping-Hsiang Huang

Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

A capacitor measurement circuit for measuring a capacitance of a test capacitor includes a first transistor with a first source-drain path coupled between a first capacitor plate of the test capacitor and a ground; a second transistor with a second source-drain path coupled between a second capacitor plate of the test capacitor and the ground; and a current-measuring device configured to measure a first charging current and a second charging current of the test capacitors. The first and the second charging currents flow to the test capacitor in opposite directions.

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Номер записи: 20

12-04-2012 дата публикации

Integrated circuit, test operation method thereof, and apparatus having the same

Номер: US20120086679A1

Автор: Jae Wook Kwon, Joo-won HWANG

Принадлежит: SAMSUNG ELECTRONICS CO LTD

An integrated circuit is provided. The integrated circuit includes a plurality of output pads, a plurality of test pads, and a plurality of channel shift switches respectively connected between the plurality of output pads and the plurality of test pads and operated by a plurality of channel shift switch enable signals. A short path between the plurality of output pads may be detected when each of the plurality of channel shift switch enable signals are simultaneously at a high level.

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Номер записи: 21

12-04-2012 дата публикации

Dual mode test access port method and apparatus

Номер: US20120089878A1

Автор: Lee D. Whetsel

Принадлежит: Texas Instruments Inc

Connection circuitry couples scan test port (STP) circuitry to test access port (TAP) circuitry. The connection circuitry has inputs connected to scan circuitry control output leads from the TAP circuitry, a select input lead, and a clock input lead. The connection circuitry has outputs connected to a scan enable (SE) input lead, a capture select (CS) input lead, and the scan clock (CK) input lead of the STP circuitry. The connection circuitry includes a multiplexer having a control input connected with a clock select lead from the TAP circuitry, an input connected with a functional clock lead, an input connected with the clock input lead, an input connected with a Clock-DR lead from the TAP circuitry, an OFF lead, and an output connected with the scan clock input lead.

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Номер записи: 22

19-04-2012 дата публикации

Adapted test apparatus for electronic components

Номер: US20120092035A1

Автор: Wen-Hsien LO

Принадлежит: WELL-HANDLE TECHNOLOGY Co Ltd

An adapted test apparatus for electronic components includes a case assembly, a plurality of first motherboard assemblies and a handler. The first motherboard assemblies are disposed in the case assembly. Each first motherboard assembly includes a motherboard, a first main connector, an adapter, a plurality of test connectors and a central processing unit (CPU). The motherboard is vertically disposed in the case assembly. The first main connector is disposed on the motherboard and electrically connected to the motherboard. The adapter is electrically connected to the first main connector and substantially perpendicular to the motherboard. The test connector is disposed on the adapter. The CPU is disposed on the motherboard and electrically connected to the motherboard. The handler inserts a plurality of electronic components into the test connectors in a vertical direction, tests the electronic components and removes the electronic components after the electronic components are tested.

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Номер записи: 23

19-04-2012 дата публикации

Connector, cable assembly, and semiconductor testing device

Номер: US20120094534A1

Автор: Akionori Mizumura, Nobumasa Motohashi, Shin Sakiyama, Teruhito Suzuki, Toshihiro Niitsu

Принадлежит: Advantest Corp, Molex Japan LLC

The connector includes an enclosure including insertion holes formed therein, into which tip end portions of coaxial cables provided with signal terminals and with ground terminals arranged at parts of peripheries of the signal terminals are inserted, and auxiliary ground conductors, which are retained by the enclosure, are electrically connected to the ground terminals, and are arranged at other parts of the peripheries of the signal terminals.

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Номер записи: 24

19-04-2012 дата публикации

Electronic device and method for controlling modulations of multiple-instruments and sensors

Номер: US20120095716A1

Автор: Hsien-Chuan Liang, Shen-Chun Li, Shou-Kuo Hsu, Wen-Laing Tseng, Yu-Chang Pai

Принадлежит: Hon Hai Precision Industry Co Ltd

A method for modulating multiple-instruments and multiple-sensors using an electronic device. The electronic device controls an instrument to measure the working parameters of an object, and controls a sensor to detect the working temperature of the object. By comparing the working parameters against a predefined range, and comparing the working temperature against a predefined temperature value, the electronic device determines whether the instrument and the sensor need to be modulated. If any of the working parameters is not within the predefined range or if the working temperature is greater than the predefined temperature value, the electronic device controls the instrument and the sensor to be modulated by using a modulation transfer function and a predetermined direction.

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Номер записи: 25

10-05-2012 дата публикации

Methods and Systems for Production Testing of DCO Capacitors

Номер: US20120112768A1

Автор: Jeroen Kuenen

Принадлежит: St Ericsson SA

Systems provide for a test system for capacitors in a digitally controllable oscillator (DCO). The system includes: capacitor toggling logic configured to switch on and off a selected one of the capacitors at a modulation frequency; a tone generator configured to generate a tone; a mixer configured to receive the tone and an output carrier signal from the DCO while the capacitor toggling logic is switching the selected one of the capacitors on and off and to output an intermediate frequency signal having FM sidebands based on the modulation frequency and relative capacitor size; and an evaluation circuit configured to evaluate a frequency deviation associated with the selected one of the capacitors based on at least one of the FM sidebands.

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Номер записи: 26

10-05-2012 дата публикации

Test apparatus

Номер: US20120112783A1

Автор: Daisuke Watanabe, Masahiro Ishida, Masayuki Kawabata, Toshiyuki Okayasu

Принадлежит: Advantest Corp

A test apparatus tests a DUT formed on a wafer. A power supply compensation circuit includes source and a sink switches each controlled according to a control signal. When the source or sink switch is turned on, a compensation pulse current is generated, and the compensation pulse current is injected into a power supply terminal of the DUT via a path that differs from that of a main power supply, or is drawn from the power supply current that flows from the main power supply to the DUT via a path that differs from that of the power supply terminal of the DUT. Of components forming the power supply compensation circuit, including the source and sink switches, a part is formed on the wafer. Pads are formed on the wafer in order to apply a signal to such a part of the power supply compensation circuit formed on the wafer.

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Номер записи: 27

17-05-2012 дата публикации

Electronic Device and Noise Current Measuring Method

Номер: US20120119757A1

Автор: Satoshi Nakamura, Takashi Suga, Yutaka Uetmatsu

Принадлежит: HITACHI LTD

A noise current passing through a substrate on which an electronic component is mounted is suppressed in a housing, to provide a malfunction of an electronic device. A substrate ( 103 ) on which an electronic component is mounted is secured to a housing ( 102 ) by a metal spacer ( 108 ) and a screw ( 104 ). A noise control member ( 100 ) mainly composed of an insulation substance is disposed between the metal spacer ( 108 ) and the substrate ( 103 ). A first conductive film is formed on the metal spacer-side of the noise control member ( 100 ), and a second conductive film is formed on the substrate-side of the noise control member ( 100 ). A resistance member ( 101 ) is disposed between the first conductive film and the second conductive film. A noise current introduced from the housing to the substrate can be suppressed by the resistance member.

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Номер записи: 28

17-05-2012 дата публикации

Power cycling test arrangement

Номер: US20120119767A1

Автор: Michael Z. Su

Принадлежит: Advanced Micro Devices Inc

A device instructs a power supply to provide a current to a power cycling test structure that includes a heat source interconnected with a package, via a first level interconnect mechanism, and a printed circuit board (PCB) interconnected with the package, via a second level interconnect mechanism. The device also monitors thermal feedback associated with the heat source, and monitors, based on the provided current, voltage feedback associated with the power cycling test structure. The device further determines a thermal profile of the power cycling test structure based on the thermal feedback and the voltage feedback.

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Номер записи: 29

17-05-2012 дата публикации

Signal sensing device and circuit boards

Номер: US20120119779A1

Автор: Letha Rousseau, Richard Schumacher

Принадлежит: Hewlett Packard Development Co LP

Apparatus are provided for use in testing circuit boards. A signal sensing device includes one or more probes. Each probe includes a length of rigid coaxial conductor configured to define a sensing pin at one end. A circuit board defines a number of through vias lined in metal and configured to receive the sensing pin of a corresponding probe. The signal sensing device also includes a ground pin. Electrical pathways extending away from adjacent pairs of the through vias can be tested for electrical impedance and other signal propagating characteristics by way of the signal sensing device.

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Номер записи: 30

17-05-2012 дата публикации

Serial i/o using jtag tck and tms signals

Номер: US20120124438A1

Автор: Lee D. Whetsel

Принадлежит: Texas Instruments Inc

The present disclosure describes a novel method and apparatus of using the JTAG TAP's TMS and TCK terminals as a general purpose serial Input/Output (I/O) bus. According to the present disclosure, the TAP's TMS terminal is used as a clock signal and the TCK terminal is used as a bidirectional data signal to allow serial communication to occur between; (1) an IC and an external controller, (2) between a first and second IC, or (3) between a first and second core circuit within an IC.

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Номер записи: 31

24-05-2012 дата публикации

Targeted production control using multivariate analysis of design marginalities

Номер: US20120131527A1

Автор: Sagar Kekare

Принадлежит: Synopsys Inc

Targeted production control using multivariate analysis of design marginalities. A list of a plurality of metrology operations is accessed during production of an integrated circuit device. The list is generated from operations performed in the design of the integrated circuit device. At least one of the plurality of metrology operations is performed on the integrated circuit device. A manufacturing process of the integrated circuit device may be adjusted responsive to results of the performing.

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Номер записи: 32

31-05-2012 дата публикации

Stackable semiconductor chip with edge features and methods of fabricating and processing same

Номер: US20120133381A1

Автор: Andy E. Hooper, John R. Carruthers, Kelly Bruland, Timothy R. Webb

Принадлежит: Electro Scientific Industries Inc

A method of performing a function on a three-dimensional semiconductor chip package as well as on individual chips in the package is disclosed. That method involves the creation of an operative relationship between a function performer and an edge feature on the chip or chips wherein the edge feature consists of one or more of an electrically conductive pad, thermally conductive pad, a probe pad, a fuse, a resistor, a capacitor, an inductor, an optical emitter, an optical receiver, a test pad, a bond pad, a contact pin, a heat dissipator, an alignment marker, a metrology feature and a function performer may be any one or more of a test probe, the laser, a programming device, an interrogation device, a loading device or a tuning device. In addition, a chip per se with edge features is disclosed along with a three-dimensional stack of such chips in either of several different configurations. The disclosure provides information regarding the formation of edge feature, the singulation of dice having incipient edge features, the stacking of dice and the handling or dice with edge features.

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Номер записи: 33

31-05-2012 дата публикации

Transistor power switch device and method of measuring its characteristics

Номер: US20120133388A1

Автор: Beatrice Bernoux, Jean Reynes, Rene Escoffier

Принадлежит: FREESCALE SEMICONDUCTOR INC

A transistor power switch device comprising an array of vertical transistor elements for carrying current between first and second faces of a semiconductor body. The device also comprises a semiconductor monitor element comprising first and second semiconductor monitor regions in the semiconductor body and a monitor conductive layer distinct from the current carrying conductive layer of the transistor array. The semiconductor monitor element presents semiconductor properties representative of the transistor array. Characteristics of the semiconductor monitor element are measured as representative of characteristics of the transistor array. Source metal ageing of a transistor power switch device is monitored by measuring and recording a parameter which is a function of a sheet resistance of the monitor conductive layer when the transistor power switch device is new and comparing it with its value after operation of the device. A measured current is applied between a first location on an elongate strip element of the monitor conductive layer and a first location on one of a pair of lateral extensions of the strip, and the corresponding voltage developed between a second location on the elongate strip element and the other of said pair of lateral extensions is measured.

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Номер записи: 34

07-06-2012 дата публикации

System And Method For Recording The Characteristic Curves Of Light-Emitting Diodes (LEDs)

Номер: US20120139544A1

Автор: Eduardo Pereira, Michael Zimmermann

Принадлежит: TRIDONICATCO SCHWEIZ AG

The invention relates to a system for recording characteristic curves for a light-emitting diode arrangement ( 1 ) comprising at least one light-emitting diode ( 2 ). A control unit ( 4 ) is used to operate the light-emitting diode arrangement ( 1 ) and to record the diode current ( 8 ) and the voltage ( 9 ) on the light-emitting diode arrangement ( 1 ). The control unit ( 4 ) is also used to record a first current/voltage pair (P 1 ) and a different second current/voltage pair (P 2 ), at a first temperature of the light-emitting diode arrangement ( 1 ), and a third current/voltage pair (P 3 ) and a different fourth current/voltage pair (P 4 ), at a second temperature of the light-emitting diode arrangement ( 1 ). The invention also relates to a method for recording characteristic curves of a light-emitting diode arrangement.

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Номер записи: 35

07-06-2012 дата публикации

Method for performing burn-in test

Номер: US20120139566A1

Автор: Koji Shimazawa, Masaaki Kaneko, Takashi Honda, Tsuguki Noma, Yoichi Mugino, Yoshito NISHIOKA

Принадлежит: ROHM CO LTD, TDK Corp

Provided is a method for performing a burn-in test on an object under test in which a plurality of electrodes are provided in positions at different heights. The method comprising steps of: preparing an object under test in which an electrode in a higher position have a higher surface roughness among the plurality of electrodes; bringing a plurality of sheet-type probes into contact with the plurality of electrodes, respectively; and supplying an electric current with the plurality of electrodes through the plurality of sheet-type probes. By implementing the method, the sheet-type probes can be kept in stable contact with the electrodes because electrodes in a higher position have a higher surface roughness Ra than electrodes in a lower position. Consequently, stable and reliable burn-in test can be performed.

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Номер записи: 36

07-06-2012 дата публикации

Integrated circuit with jtag port, tap linking module, and off-chip tap interface port

Номер: US20120144254A1

Автор: Lee D. Whetsel

Принадлежит: Texas Instruments Inc

An IC includes an IEEE 1149.1 standard test access port (TAP) interface and an additional Off-Chip TAP interface. The Off-Chip TAP interface connects to the TAP of another IC. The Off Chip TAP interface can be selected by a TAP Linking Module on the IC.

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Номер записи: 37

14-06-2012 дата публикации

Apparatus and method for combined micro-scale and nano-scale c-v, q-v, and i-v testing of semiconductor materials

Номер: US20120146669A1

Автор: Andrew N. Erickson

Принадлежит: Multiprobe Inc

Current Voltage and Capacitance Voltage (IV and CV) measurements are critical in measurement of properties of electronic materials especially semiconductors. A semiconductor testing device to accomplish IV and CV measurement supports a semiconductor wafer and provides a probe for contacting a surface on the wafer under control of an atomic Force Microscope or similar probing device for positioning the probe to a desired measurement point on the wafer surface. Detection of contact by the probe on the surface is accomplished and test voltage is supplied to the semiconductor wafer. A first circuit for measuring capacitance sensed by the probe based on the test voltage and a complimentary circuit for measuring Fowler Nordheim current sensed by the probe based on the test voltage are employed with the probe allowing the calculation of characteristics of the semiconductor wafer based on the measured capacitance and Fowler Nordheim current.

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Номер записи: 38

14-06-2012 дата публикации

Methods of Combinatorial Processing For Screening Multiple Samples on a Semiconductor Substrate

Номер: US20120149137A1

Автор: Gaurav Verma, Imran Hashim, Kurt Weiner, Prashant Phatak, Sandra Malhotra, Tony Chiang

Принадлежит: Intermolecular Inc

In embodiments of the current invention, methods of combinatorial processing and a test chip for use in these methods are described. These methods and test chips enable the efficient development of materials, processes, and process sequence integration schemes for semiconductor manufacturing processes. In general, the methods simplify the processing sequence of forming devices or partially formed devices on a test chip such that the devices can be tested immediately after formation. The immediate testing allows for the high throughput testing of varied materials, processes, or process sequences on the test chip. The test chip has multiple site isolated regions where each of the regions is varied from one another and the test chip is designed to enable high throughput testing of the different regions.

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Номер записи: 39

21-06-2012 дата публикации

Automatic Stein Hall Viscosity Cup

Номер: US20120158322A1

Автор: Mark J. Seksinsky, Michael K. Pastore, Toby Murray, William D. Stotler

Принадлежит: Marquip Inc

A Stein Hall cup for measuring the viscosity of a starch adhesive is automated to provide viscosity measurement in real time using a PLC or other data gathering and control processor. Temperature of the adhesive is measured concurrently with viscosity and temperature signals are processed with the timed viscosity signal to provide a temperature compensated value of starch viscosity.

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Номер записи: 40

21-06-2012 дата публикации

Ieee 1149.1 and p1500 test interfaces combined circuits and processes

Номер: US20120159275A1

Автор: Lee D. Whetsel

Принадлежит: Texas Instruments Inc

In a first embodiment a TAP of IEEE standard 1149.1 is allowed to commandeer control from a WSP of IEEE standard P1500 such that the P1500 architecture, normally controlled by the WSP, is rendered controllable by the TAP. In a second embodiment (1) the TAP and WSP based architectures are merged together such that the sharing of the previously described architectural elements are possible, and (2) the TAP and WSP test interfaces are merged into a single optimized test interface that is operable to perform all operations of each separate test interface. One approach provides for the TAP to maintain access and control of the TAP instruction register, but provides for a selected data register to be accessed and controlled by either the TAP+ATC or by the discrete CaptureDR, UpdateDR, TransferDR, ShiftDR, and ClockDR WSP data register control signals.

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Номер записи: 41

28-06-2012 дата публикации

High frequency measurement apparatus and method with load pull

Номер: US20120161784A1

Автор: Johannes Benedikt

Принадлежит: Mesuro Ltd

The present invention relates to a measurement system and method for analysing, and characterising, the behaviour of a high frequency device, commonly referred to in the art as a device under test (or DUT) at relatively high power levels. Such devices may for example need to be analysed when designing devices or designing circuits utilising such devices, for use in high power (large signal) high frequency amplifiers, such as an amplifier for use in a mobile telephone network or other telecommunications-related base-station. The measurement apparatus for measuring the response of an electronic device to a high frequency input signal includes an active load-pull circuit connectable in use to an electronic device to be measured. The active load-pull circuit includes a passive load-pull device.

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Номер записи: 42

05-07-2012 дата публикации

Computing device and method of compensating center position of mechanical arms

Номер: US20120173194A1

Автор: Hsien-Chuan Liang, Shen-Chun Li, Shou-Kuo Hsu

Принадлежит: Hon Hai Precision Industry Co Ltd

In a method of compensating the center position of a mechanical arm which has a first probe, a second probe, and a platform, a first test point and a second test point are selected on an electronic product and coordinates of the two points are acquired. A distance R between the first probe and the mechanical arm is received, and an angle θ between the platform and a line formed according to the two points is computed to obtain compensated coordinates of the mechanical arm. The mechanical arm moves to the location of the compensated coordinates, and thus locating the first probe and the second probe respectively at the first test point and the second test point.

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Номер записи: 43

12-07-2012 дата публикации

Test Contact System For Testing Integrated Circuits With Packages Having An Array Of Signal and Power Contacts

Номер: US20120176151A1

Автор: Brian K. Warwick, Jeffrey C. Sherry, Patrick J. Alladio, Russell F. Oberg

Принадлежит: Johnstech International Corp

A test fixture ( 120 ) is disclosed for electrically testing a device under test ( 130 ) by forming a plurality of temporary mechanical and electrical connections between terminals ( 131 ) on the device under test ( 130 ) and contact pads ( 161 ) on the load board ( 160 ). The test fixture ( 120 ) has a replaceable membrane ( 150 ) that includes vias ( 151 ), with each via ( 151 ) being associated with a terminal ( 131 ) on the device under test ( 130 ) and a contact pad ( 161 ) on the load board ( 160 ). In some cases, each via ( 151 ) has an electrically conducting wall for conducting current between the terminal ( 131 ) and the contact pad ( 161 ). In some cases, each via ( 151 ) includes a spring ( 152 ) that provides a mechanical resisting force to the terminal ( 131 ) when the device under test ( 130 ) is engaged with the test fixture ( 120 ).

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Номер записи: 44

12-07-2012 дата публикации

Removable and replaceable tap domain selection circuitry

Номер: US20120179945A1

Автор: Lee D. Whetsel

Принадлежит: Texas Instruments Inc

Today many instances of IEEE 1149.1 Tap domains are included in integrated circuits (ICs). While all TAP domains may be serially connected on a scan path that is accessible external to the IC, it is generally preferred to have selectivity on which Tap domain or Tap domains are accessed. Therefore Tap domain selection circuitry may be included in ICs and placed in the scan path along with the Tap domains. Ideally, the Tap domain selection circuitry should only be present in the scan path when it is necessary to modify which Tap domains are selected in the scan path. The present disclosure describes a novel method and apparatus which allows the Tap domain selection circuitry to be removed from the scan path after it has been used to select Tap domains and to be replaced back into the scan path when it is necessary to select different Tap domains.

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Номер записи: 45

26-07-2012 дата публикации

Method and Device for Inspecting Strips of Touch Panel

Номер: US20120187954A1

Автор: Shih-Chieh Hsu

Принадлежит: Egalax Empia Technology Inc

A method for inspecting the strips of a touch panel is disclosed. The method includes providing a first signal to a first driven first strip of a plurality of first strips and generating a plurality of continuous first differences according to signals on a plurality of second strips; providing the first signal to the first driven first strip and a second driven first strip of the plurality of first strips and generating a plurality of continuous second differences according to the signals on the plurality of second strips; and determining if there is a broken second strip between the first and second driven first strips based on the continuous first and second differences. Herein, the plurality of first and second strips intersect each other on the touch panel to form a plurality of intersecting regions.

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Номер записи: 46

26-07-2012 дата публикации

Wafer level testing structure

Номер: US20120187972A1

Автор: Wen-Tsung Lee

Принадлежит: Chunghwa Precision Test Technology Co Ltd

A wafer level testing structure, disposed between a wafer and a prober, for transmitting the electrical signal of the wafer to the prober, the wafer level testing structure includes: a socket and a probe interface board disposed between the socket and the prober, wherein the probe interface board is electrically coupled to the prober, and a plurality of pogo pins is inserted through the socket, and one end of the plurality of pogo pins is electrically coupled to the wafer, the other end of the plurality of pogo pins is electrically coupled to the probe interface board, thereby the electrical signal of the wafer transmits from the probe interface board to the prober.

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Номер записи: 47

26-07-2012 дата публикации

Semiconductor device evaluation apparatus and semiconductor device evaluation method

Номер: US20120187975A1

Автор: Risho Koh, Takahiro Iizuka

Принадлежит: Renesas Electronics Corp

A semiconductor device evaluation apparatus includes a current measurement portion that measures a current value at multiple times included in a period from the beginning of application of a voltage to a semiconductor device to a steady state of the current value flowing through the semiconductor device; a period division portion that divides the period into a first period and a second period later than the first period and finds a curve approximately representing a temporal change in a current value measured at time included in the second period so that a difference between a current value measured at the time included in the first period and a current value found by extrapolating the curve at the same time becomes greater than a specified threshold value; and a current estimation portion that estimates a current value flowing through the semiconductor device at the start time.

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Номер записи: 48

02-08-2012 дата публикации

Coaxial Four-Point Probe for Low Resistance Measurements

Номер: US20120194208A1

Автор: Michael Anthony Lamson, Rajiv Dunne, Siva Prakash Gurrum

Принадлежит: Texas Instruments Inc

Various exemplary embodiments provide probes, systems and methods for measuring an effective electrical resistance/resistivity with high sensitivity. In one embodiment, the measuring system can include an upper probe set and a similar lower probe set having a sample device sandwiched there-between. The device-under-test (DUT) samples can be sandwiched between two conductors of the sample device. Each probe set can have an inner voltage sense probe coaxially configured inside an electrically-isolated outer current source probe that has a large contact area with the sample device. The measuring system can also include a computer readable medium for storing circuit simulations including such as FEM simulations for extracting a bulk through-plane electrical resistivity and an interface resistivity for an effective electrical z-resistivity of the DUT, in some cases, having sub-micro-ohm resistance.

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Номер записи: 49

09-08-2012 дата публикации

Element Substrate, Inspecting Method, and Manufacturing Method of Semiconductor Device

Номер: US20120200312A1

Автор: Kiyoshi Kato, Koichiro Kamata, Konami Izumi, Masahiko Hayakawa

Принадлежит: Semiconductor Energy Laboratory Co Ltd

A substrate including a semiconductor layer, where characteristics of an element can be evaluated with high reliability, and an evaluating method thereof are provided. A substrate including a semiconductor layer of the invention has a closed-loop circuit in which an antenna coil and a semiconductor element are connected in series, and a surface of an area over which the circuit is formed is covered with an insulating film. By using such a circuit, a contactless inspection can be carried out. Further, a ring oscillator can be substituted for the closed-loop circuit.

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Номер записи: 50

09-08-2012 дата публикации

Battery Charge Protection System

Номер: US20120200968A1

Автор: George Altemose, Michael Consi

Принадлежит: Individual

A system comprises a battery including one or more cells, an energy source, a load, and a battery protection circuit coupled to the battery, the energy source and the load. The circuit determines if the charge of each cell is at/above a predetermined, band gap supplied threshold voltage, which results in disconnecting of the battery from the energy source. The circuit also may determine if the charge of any cell is at/below a second predetermined level, which may result in disconnecting of the battery from the load. The circuit may be radiation-hardened (e.g., via redundancy), through the use of two sets of field effect transistors, two logic gates, two groups of comparator circuits, and two relays. The circuit provides multiply redundant protection comprising: redundantly assessing the overvoltage determination; redundantly triggering battery isolation; and preventing inadvertent isolation and non-charging, occurring absent overvoltage, through redundant first and second relays.

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Номер записи: 51

09-08-2012 дата публикации

Oscilloscope and method, system thereof for collecting and displaying signal waveform

Номер: US20120203500A1

Автор: Guangming Ma, Zhenying Wang

Принадлежит: ZTE Corp

An oscilloscope and a method and system thereof for collecting and displaying signal waveform are disclosed, including a control measuring unit determining a corresponding test command and test parameter according to the selection of test points on a tested object; calculating position coordinate of each test point, and sending the test command and test parameter to an automatic collecting unit; the automatic collecting unit returning test signals of each test point collected by a collecting probe of the automatic collection unit to the control measuring unit according to the test command and test parameter; and the control measuring unit generating corresponding waveform data according to the test signals returned by the automatic collecting unit, storing and displaying the waveform data.

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Номер записи: 52

30-08-2012 дата публикации

Semiconductor integrated circuit

Номер: US20120218000A1

Автор: Takashi Inukai

Принадлежит: Toshiba Corp

Each of a plurality of inverters includes: a first transistor having one end connected to a first terminal; and a second transistor having one end connected to a second terminal and the other end connected to the other end of the first transistor. The first transistors included in the inverters located at either odd-number orders or even-number orders counted from an input terminal side of an inverter chain circuit become conductive when a pre-charge signal has a first state to pre-charge the other end of the first transistors, and become non-conductive when the pre-charge signal has a second state.

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Номер записи: 53

30-08-2012 дата публикации

Quality estimation apparatus, quality estimation method and non-transitory computer-readable medium storing program

Номер: US20120221272A1

Автор: Ken Ueno, Ryusei Shingaki, Shizu Sakakibara

Принадлежит: Toshiba Corp

According to one embodiment, a quality estimation apparatus includes: a storage module which stores designation information for designating inspection targets to be subjected to sampling inspection in estimation targets including the inspection targets and non-inspection targets, characteristic values obtained by the sampling inspection of the inspection targets and criterion information for determining qualities of the inspection targets based on the characteristic values; a threshold value calculator which calculates threshold values indicating qualities of the inspection targets from the characteristic values of the inspection targets by using the criterion information; and a clustering module which classifies the estimation targets in clusters so that the clusters have probability distributions with the threshold values used as a variable.

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Номер записи: 54

06-09-2012 дата публикации

Test bracket for circuit board

Номер: US20120223731A1

Автор: HUI Li, Jin-Ming Mo, Sha Peng, Yu-Mei Li

Принадлежит: Hon Hai Precision Industry Co Ltd, Hongfujin Precision Industry Shenzhen Co Ltd

A test bracket for testing a circuit board includes a base, two connection pieces, and a supporting member for supporting the circuit board. The base includes a board and two posts extending up from the board. The supporting member includes two poles and a number of ribs slidably connected between the poles. First ends of the connection pieces are respectively detachably connected to the posts of the base, and second ends of the connection pieces opposite to the first ends are respectively pivotably connected to the poles.

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Номер записи: 55

06-09-2012 дата публикации

Transmission device and method of testing transmission characteristic of dut

Номер: US20120223732A1

Автор: Shigeki Kobayashi

Принадлежит: Shinko Electric Industries Co Ltd

There is provided a transmission device. The transmission device includes: an adapter device ( 11 ) including: a first surface having a plurality of first terminals ( 21 ) thereon; and a second surface opposite to the first surface and having a plurality of second terminals ( 22 ) thereon, wherein a pitch between the adjacent second terminals is different from a pitch between the adjacent first terminals, a plurality of signal lines each electrically connecting a corresponding one of the first terminals and a corresponding one of the second terminals; and a signal compensation device ( 12 ) connected to the adapter device through the signal lines and configured to compensate for a transmission loss of a signal path between the corresponding first terminal and the corresponding second terminal such that the transmission loss is set to a given value.

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Номер записи: 56

06-09-2012 дата публикации

System and method for physically detecting counterfeit electronics

Номер: US20120226463A1

Автор: Jason Galyardt, Stephen Dorn Freeman, Walter J. Keller, III

Принадлежит: Nokomis Inc

A system for inspecting or screening electrically powered device includes a signal generator inputting a preselected signal into the electrically powered device. There is also an antenna array positioned at a pre-determined distance above the electrically powered device. Apparatus collects RF energy emitted by the electrically powered device in response to input of said preselected signal. The signature of the collected RF energy is compared with an RF energy signature of a genuine part. The comparison determines one of a genuine or a counterfeit condition of the electrically powered device.

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Номер записи: 57

20-09-2012 дата публикации

Device for Releasably Receiving a Semiconductor Chip

Номер: US20120238042A1

Автор: Peter Ossimitz

Принадлежит: INFINEON TECHNOLOGIES AG

A device is disclosed for releasably receiving a singulated semiconductor chip having a first main surface and a second main surface opposite the first main surface. The device includes a support structure. At least one elastic element is arranged on the support structure. Electrical contact elements are arranged on the at least one elastic element and adapted to be contacted to the first main surface of the semiconductor chip. A foil is adapted to be arranged over the second main surface of the semiconductor chip.

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Номер записи: 58

20-09-2012 дата публикации

Wireless probe card verification system and method

Номер: US20120239339A1

Автор: Susumu Kaneko

Принадлежит: Formfactor Inc

A probe card assembly can include a wireless link to an external verifier (e.g., debugger). The wireless link can interface to a boundary scan interface of a controller on the probe card assembly. The wireless link can allow for verification of the probe card assembly while it is installed within a prober.

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Номер записи: 59

27-09-2012 дата публикации

Non-Linear Vertical Leaf Spring

Номер: US20120242363A1

Автор: Benjamin N. Eldridge, Eric D. Hobbs, John K. Gritters, Keith J. Breinlinger, Michael J. Armstrong

Принадлежит: Formfactor Inc

An electrically conductive contact element can include a first base and a second base with elongate, spaced apart leaves between the bases. A first end of each leaf can be coupled to the first base and an opposite second end of the leaf can be coupled to the second base. A body of the leaf between the first end and the second end can be sufficiently elongate to respond to a force through said contact element substantially parallel with the first axis and the second axis by first compressing axially while said force is less than a buckling force and then bending while said force is greater than the buckling force.

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Номер записи: 60

27-09-2012 дата публикации

Test apparatus for pci card

Номер: US20120246371A1

Автор: Hua Yue, Tai-Chen Wang, Xiao-Wei FU, Xue-Hong LIU, Yan Chen, Ze-Kun Kang

Принадлежит: Hon Hai Precision Industry Co Ltd, Hongfujin Precision Industry Shenzhen Co Ltd

A test apparatus includes a circuit board and a peripheral component interconnect (PCI) expansion slot. A number of golden fingers are arranged at a first side of the circuit board. A second side of the circuit board is connected to a bottom of the PCI expansion slot. The golden fingers are electrically connected to the PCI expansion slot. A number of first test pads and second test pads are arranged on the circuit board between the first and second sides. The first and second test pads have different shapes, sizes, and/or colors. The first and second test pads are electrically connected to the PCI expansion slot correspondingly.

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Номер записи: 61

04-10-2012 дата публикации

Handler tray, system and method of testing an object including the same

Номер: US20120249177A1

Автор: Doo-Seob KIM, Gui-Heum CHOI, Jong-An LEE, Seoung-Su HA, Seung-Hee Lee, Young-Gil Lee

Принадлежит: SAMSUNG ELECTRONICS CO LTD

A handler tray may include a tray body and a socket. The tray body may be configured to receive an object. The tray body with the object may be transferred to a test board. The tray body may be selectively interposed between the object and the test board to supply a test current from the test board to external terminals of the object. The socket may be formed on the tray body. The socket may electrically make contact with the external terminals of the object. Thus, a pick-up robot and an insert may be unnecessary, so that a test system and method of testing the object may have an optimally available space.

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Номер записи: 62

04-10-2012 дата публикации

Method and apparatus of electrical device characterization

Номер: US20120253719A1

Автор: Kao-Cheng LIN, Wen-Jung Liao, Yu-Te Kao

Принадлежит: United Microelectronics Corp

A method of electrical device characterization comprises: providing an array of electrical devices arranged in rows and columns, wherein each electrical device has a first terminal, a second terminal and a third terminal; clamping a first voltage at a first terminal of a selected electrical device via a first buffer or an first external voltage source; clamping a second voltage at a second terminal of a selected electrical device via a second buffer or a second external voltage source; controlling a third buffer to couple the third terminal of the selected electrical device to a first terminal or a second terminal of at least one non-selected column of electrical devices; and deriving a characterization result via the third terminal of the selected electrical device; wherein the array of electrical devices, the first buffer, the second buffer and the third buffer are on a same die or a same module.

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Номер записи: 63

18-10-2012 дата публикации

Device for disturbing the operation of an integrated circuit

Номер: US20120261594A1

Автор: Jean-Louis Modave, Thierry Huque

Принадлежит: Proton World International NV

A system for injecting faults by laser beams into an electronic circuit including: at least two lasers capable of emitting approximately parallel beams; at least one optical system receiving, on the magnifying side, the beams; and a support of the integrated circuit placed on the reducing side of the optical system.

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Номер записи: 64

18-10-2012 дата публикации

Switching element system and method

Номер: US20120262008A1

Автор: Alvin G. Becker, James A. Reimund, James E. Nicholson, Kyle R. Bryson, Naji S. Norder

Принадлежит: Individual

A 2×2 switching element that includes first and second relays each having a first terminal, a second terminal and a third terminal, wherein the first and second relays each operate between a first state to connect the first terminal to the second terminal and a second state to connect the first terminal to the third terminal. The second terminals and third terminals, respectively, of the first and second relays are coupled to one another. The 2×2 switching element is selectively operable between: a first switching state where the first relay is operated in the first state and the second relay is operated in the second state, and a second switching state where the first relay is operated in the second state and the second relay is operated in the second state.

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Номер записи: 65

25-10-2012 дата публикации

Test apparatus

Номер: US20120268138A1

Автор: Kenji Hashimoto

Принадлежит: Advantest Corp

To detect whether energy accumulated in an inductive load section has been discharged. Provided is a test apparatus that tests a device under test, comprising a power supply section that generates a power supply voltage to be supplied to the device under test; an inductive load section that is provided in a path between the power supply section and the device under test; a housing section that houses a substrate that includes at least the inductive load section; and a lock maintaining section that keeps an opening/closing section, which allows an operator to access the substrate within the housing section, in a locked state when a voltage at a predetermined position on the substrate is greater than a set voltage.

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Номер записи: 66

25-10-2012 дата публикации

Laser characterization system and process

Номер: US20120268743A1

Автор: Chung-En Zah, Feng Xie, Gerard P. Wysocki, Yin Wang

Принадлежит: Corning Inc, PRINCETON UNIVERSITY

A system and process for automatically characterizing a plurality of external cavity semiconductor laser chips on a semiconductor laser bar separated from a semiconductor wafer. The system includes a diffraction grating and a steering mirror mounted on a rotary stage for rotating the diffraction grating through a range of diffraction angles. A laser bar positioning stage for automatically aligning each laser chip in a laser bar with the diffraction grating. Reflecting a laser beam emitted from a laser chip in a laser bar with diffraction grating and steering mirror to the laser analyzer. Automatically rotating the diffraction grating through a range of diffraction angles relative to the laser beam and automatically characterizing the laser optical properties such as spectra, power, or spatial modes with the laser analyzer at each diffraction angle.

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Номер записи: 67

01-11-2012 дата публикации

Apparatus and method for measuring local surface temperature of semiconductor device

Номер: US20120276675A1

Автор: Rolf-Peter Vollertsen

Принадлежит: Individual

An apparatus and method is described for measuring a local surface temperature of a semiconductor device under stress. The apparatus includes a substrate, and a reference MOSFET. The reference MOSFET may be disposed closely adjacent to the semiconductor device under stress. A local surface temperature of the semiconductor device under stress may be measured using the reference MOSFET, which is not under stress. The local surface temperature of the semiconductor device under stress may be determined as a function of drain current values of the reference MOSFET measured before applying stress to the semiconductor device and while the semiconductor device is under stress.

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Номер записи: 68

08-11-2012 дата публикации

Systems and methods for adjusting threshold voltage

Номер: US20120281483A1

Автор: James B. Burr, Robert Paul Masleid

Принадлежит: Individual

Systems and methods for adjusting threshold voltage. A threshold voltage of a transistor of an integrated circuit is measured. A bias voltage, which when applied to a body well of the transistor corrects a difference between the threshold voltage and a desired threshold voltage for the transistor, is determined. The bias voltage is encoded into non-volatile storage on the integrated circuit. The non-volatile storage can be digital and/or analog.

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Номер записи: 69

08-11-2012 дата публикации

Optimized jtag interface

Номер: US20120284579A1

Автор: Lee D. Whetsel

Принадлежит: Texas Instruments Inc

An optimized JTAG interface is used to access JTAG Tap Domains within an integrated circuit. The interface requires fewer pins than the conventional JTAG interface and is thus more applicable than conventional JTAG interfaces on an integrated circuit where the availability of pins is limited. The interface may be used for a variety of serial communication operations such as, but not limited to, serial communication related integrated circuit test, emulation, debug, and/or trace operations.

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Номер записи: 70

15-11-2012 дата публикации

3D IC Testing Apparatus

Номер: US20120286814A1

Автор: Chih-Chia Chen, Ching-Nen Peng, Hao Chen, Hung-Chih Lin, Mill-Jer Wang

Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

A three dimensional (3D) integrated circuit (IC) testing apparatus comprises a plurality of connection devices. When a device under test (DUT) such as an interposer or a 3D IC formed by a plurality of 3D dies operates in a testing mode, the 3D IC testing apparatus is coupled to the DUT via a variety of interface channels such as probes. The connection devices and a variety of through silicon vias (TSVs) in the DUT form a TSV chain so that a electrical characteristic test of the variety of TSVs can be tested all at once.

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Номер записи: 71

15-11-2012 дата публикации

Mos test structure, method for forming mos test structure and method for performing wafer acceptance test

Номер: US20120286819A1

Автор: Chin-Te Kuo, Hsien-Wen Liu, Yi-Nan Chen

Принадлежит: Nanya Technology Corp

A MOS test structure is disclosed. A scribe line region is disposed on a substrate which has a first side and a second side opposite to the first side. An epitaxial layer is disposed on the first side, the doping well is disposed on the epitaxial layer and the doping region is disposed on the doping well. A trench gate of a first depth is disposed in the doping region, in the doping well and in the scribe line region. A conductive material fills the test via which has a second depth and an isolation covering the inner wall of the test via and is disposed in the doping region, in the doping well, in the epitaxial layer and in the scribe line region, to electrically connect to the epitaxial layer so that the test via is capable of testing the epitaxial layer and the substrate together.

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Номер записи: 72

15-11-2012 дата публикации

Test systems with cables that support multiple communications buses

Номер: US20120290246A1

Автор: Anuj Bhatnagar, James L. McPeak, Nelson Fong, Srdjan Sobajic

Принадлежит: Apple Inc

A test system may include test stations for testing a device under test. The test stations may each include test equipment that may be connected to a device under test using a test cable. The test cable may include a status indicator to indicate when tests have been passed or have failed. A first connector at one end of the test cable may be coupled to the test equipment. A second connector at an opposing end of the test cable may be coupled to the device under test. Communications through the first connector may use a first communications protocol. Communications through a first set of contacts in the second connector may use the first communications protocol. Communications through a second set of contacts in the second connector may use a second communications protocol.

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Номер записи: 73

22-11-2012 дата публикации

Liquid cooling during testing

Номер: US20120291999A1

Автор: David Walter Lewinnek, Jack Michael Thompson, John Kenji Narasaki, Ray Mirkhani

Принадлежит: Individual

A system includes electronics for testing a device, a reservoir to store coolant, where the reservoir includes a bellows that is compressible, a pump system to move coolant out of the reservoir to cool the electronics, and means to compress the bellows and thereby pressurize the coolant stored in the reservoir so that the coolant remains substantially flush with an interface to the pump system.

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Номер записи: 74

22-11-2012 дата публикации

Testing system with electrically coupled and wirelessly coupled probes

Номер: US20120293379A1

Автор: James L. McPeak, Joshua G. Nickel, Jr-Yi Shen

Принадлежит: Apple Inc

Conductive electronic device structures such as a conductive housing member that forms part of an antenna may be tested during manufacturing. A test system may be provided that has a pair of pins or other contacts. Test equipment such as a network analyzer may provide radio-frequency test signals in a range of frequencies. The radio-frequency test signals may be applied to the conductive housing member or other conductive structures under test using the test probe contacts. An antenna may be used to gather corresponding wireless radio-frequency signal data. Forward transfer coefficient data may be computed from the transmitted and received radio-frequency signals. The forward transfer coefficient data or other test data may be compared to reference data to determine whether the conductive electronic device structures contain a fault.

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Номер записи: 75

29-11-2012 дата публикации

Positioning and socketing for semiconductor dice

Номер: US20120299609A1

Автор: David Shia, Eric J. M. Moret, Michael L. Rutigliano

Принадлежит: Intel Corp

Devices and methods useful for testing bare and packaged semiconductor dice are provided. As integrated circuit chips become smaller and increasingly complex, the interface presented by a chip for connectivity with power supplies and other components of the system into which it is integrated similarly becomes smaller and more complex. Embodiments of the invention provide micron-scale accuracy alignment capabilities for fine pitch device first level interconnect areas. Embodiments of the invention employ air-bearings to effectuate the movement and alignment of a device under test with a testing interface. Additionally, testing interfaces comprising membranes supported by thermal fluids are provided.

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Номер записи: 76

06-12-2012 дата публикации

Circuit for Controlling Current to Light-Emitting Diode (LED)

Номер: US20120306502A1

Автор: Nageswara Rao Nalam, Shyam Somayajula

Принадлежит: St Ericsson SA

The present invention discloses a current controlling circuit wherein the circuit ( 200 ) comprises a DC power source ( 202 ), an inductor ( 204 ), a N-channel Metal Oxide Semiconductor (NMOS) ( 206 ), one or more LEDs ( 208 ) connected in series, a first resistor (Rsense) and a switching arrangement ( 210 ). The positive terminal of the DC power source ( 202 ) is connected to the inductor ( 204 ) in series. The series of LED ( 208 ) is connected in series with the inductor ( 204 ) and the first resistor (Rsense). According to an embodiment the switching arrangement ( 210 ) comprises a second resistor (Rslt), a first switch ( 212 ) and a second switch ( 214 ). The second resistor (Rslt) is connected in series with the second switch ( 214 ) and connected in parallel with the first switch ( 212 ). The switching arrangement ( 210 ) is connected in series with the first resistor (Rsense) and the negative terminal of the DC supply ( 202 ).

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Номер записи: 77

06-12-2012 дата публикации

Diagnostic circuit and method of testing a circuit

Номер: US20120306509A1

Автор: James Kopec, Jochen Aicher, Robert Alvord, Vu Nguyen

Принадлежит: Diehl AKO Stiftung and Co KG

A diagnostic circuit for trouble shooting electronic control units of appliances includes a voltage sensing and signal generation device with an input/output and an input. The circuit includes first terminals for connecting to the load and second terminals for connecting to the two lines of the sinusoidal source. One of the first terminals is connected to the input/output, and another one of the first terminals is connected to the input. A relay is connected between one of the second terminals and the input/output. Another relay is connected between another one of the second terminals and the input. A first diode pair with clamping diodes is connected to the input/output, and a second diode pair first diode pair with clamping diodes is connected to the input.

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Номер записи: 78

06-12-2012 дата публикации

Compensation Methods for Digital Source-Measure-Units (SMUs)

Номер: US20120306517A1

Автор: Christopher G. Regier, L. Rolando Ortega-Pohlenz

Принадлежит: Individual

A source-measure unit (SMU) may be implemented with respective digital control loops for output voltage and output current. The output voltage and output current may be measured with dedicated ADCs (analog-to-digital converters). The readings obtained by the ADCs may be compared to a setpoint, which may be set in a digital loop controller. The digital loop controller may be used to produce an output to drive a DAC (digital-to-analog converter) until the output voltage and/or output current and/or a function thereof reach the respective desired levels. The digital loop controller may implement respective integrating functions for the respective digital control loops, and may also implement a compensation function featuring pole-zero pairs to stabilize the respective current/voltage outputs. Coefficients of the compensation function may be calculated based on user programmable parameters corresponding to the gain bandwidth product, compensation frequency, and ratio of the added pole-zero frequencies.

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Номер записи: 79

06-12-2012 дата публикации

Photoinduced carrier lifetime measuring method, light incidence efficiency measuring method, photoinduced carrier lifetime measuring device, and light incidence efficiency measuring device

Номер: US20120310556A1

Автор: Toshiyuki Sameshima

Принадлежит: Tokyo University of Agriculture and Technology NUC

Disclosed is a photoinduced carrier lifetime measuring method capable of obtaining photoinduced carrier effective lifetime of a semiconductor substrate with high accuracy regardless of the surface state of the sample. The method includes the steps of: irradiating a microwave onto a semiconductor substrate while periodically pulse-irradiating an induction light onto the semiconductor substrate; detecting the microwave transmitted through the semiconductor substrate or reflected by the semiconductor substrate; and obtaining the effective lifetime of photoinduced carriers generated in the semiconductor substrate by the pulse irradiation of the induction light, based on an irradiation duration Ti and a non-irradiation duration T 2 when performing the induction light pulse irradiation and an integrated value of each microwave intensity obtained by the detection.

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Номер записи: 80

13-12-2012 дата публикации

Infrastructure for performance based chip-to-chip stacking

Номер: US20120313647A1

Автор: Alan James Drake, Eren Kursun, Gary Dale Carpenter, Phillip John Restle

Принадлежит: International Business Machines Corp

A method and system for an infrastructure for performance-based chip-to-chip stacking are provided in the illustrative embodiments. A critical path monitor circuit (infrastructure) is configured to launch a signal from a launch point in a first layer, the first layer being a first circuit. The infrastructure is further configured to create an electrical path to a capture point. The signal is launched from the launch point in the first layer. A performance characteristic of the electrical path is measured, resulting in a measurement, wherein the measurement is indicative of a performance of the first layer when stacked with a second layer in a 3D stack without actually stacking the first and the second layers in the 3D stack, the second layer being a second circuit.

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Номер записи: 81

13-12-2012 дата публикации

Electronic circuit module and method of making the same

Номер: US20120313656A1

Автор: Jae-Soon Kim, Jin-Hong An

Принадлежит: Samsung SDI Co Ltd

An electronic circuit module and a method of manufacturing the electronic circuit module are disclosed. In one embodiment, the electronic circuit module includes i) a substrate on which a circuit is formed, ii) a plurality of electrical devices electrically connected to the circuit and iii) a first molding unit coated on the substrate to cover at least the electrical devices. The module further includes i) a test terminal unit comprising a plurality of test wires and configured to inspect the circuit, wherein each of the test wires comprises a first end electrically connected to the circuit and a second end exposed from the first molding unit, and wherein the second ends of the test wires form an inspection unit and are adjacent to each other on the substrate and ii) a second molding unit coated on the substrate to cover the second ends of the test wires.

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Номер записи: 82

13-12-2012 дата публикации

Device and method for testing semiconductor device

Номер: US20120317449A1

Автор: Jung Rae Kim

Принадлежит: SAMSUNG ELECTRONICS CO LTD

A device for testing a semiconductor memory device, the device including a code table that is configured to store at least a first received code and a second received code received via a host interface, a pattern generation engine that is configured to determine a third code based on at least one of the first and the second received codes stored in the code table and to output the third code, in response to a request to perform a test operation, received via the host interface, and a signal generation unit that is configured to generate control signals for testing the semiconductor memory device, based on the third code received from the pattern generation engine.

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Номер записи: 83

20-12-2012 дата публикации

Automatic probe configuration station and method therefor

Номер: US20120319713A1

Автор: Alan Cable, Atila Ersahin, Dave Smiley, David Baldwin, Hai Tran, Kaushal Gangakhedkar, Kent Nguyen, Kiran Jitendra, Nile LIGHT, Steve Aochi, Thomas E. Wishard, Thomas H. Bailey, Yan Wang

Принадлежит: Photon Dynamics Inc

A probe system for facilitating the inspection of a device under test. System incorporates a storage rack; a probe bar gantry assembly; a probe assembly configured to electrically mate the device under test; and a robot system for picking the probe assembly from the storage rack and deliver the probe assembly to the probe bar gantry. The robot system is also enabled to pick a probe assembly from the probe bar gantry and deliver the probe assembly to the storage rack. The probe assembly includes a clamping assembly for attaching the probe assembly to the probe bar gantry or the storage rack. The probe assembly may include an array of contact pins configured to mate with conductive pads on the device under test when the probe assembly is installed on the probe bar gantry assembly.

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Номер записи: 84

27-12-2012 дата публикации

On-chip measurement of ac variability in individual transistor devices

Номер: US20120326728A1

Автор: Karthik Balakrishnan, Keith A. Jenkins

Принадлежит: International Business Machines Corp

An apparatus for determining alternating current (AC) delay variation of a transistor device under test includes a ring oscillator, the ring oscillator having the transistor device under test configured within a feedback path of the ring oscillator; and circuitry configured to measure a difference between a first signal delay path and a second signal delay path, the first signal delay path being between a gate terminal and a drain terminal of the transistor device under test, and the second signal delay path being between a source terminal and the drain terminal of the transistor device under test.

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Номер записи: 85

27-12-2012 дата публикации

Self-isolating mixed design-rule integrated yield monitor

Номер: US20120326739A1

Автор: Jin Liu

Принадлежит: Texas Instruments Inc

Assessing open circuit and short circuit defect levels in circuits implemented in state of the art ICs is difficult when using conventional test circuits, which are designed to assess continuity and isolation performance of simple structures based on individual design rules. Including circuit blocks from ICs in test circuits provides a more accurate assessment of defect levels expected in ICs using the circuit blocks. Open circuit defect levels may be assessed using continuity chains formed by serially linking continuity paths in the circuit blocks. Short circuit defect levels may be assessed by using parallel isolation test structures formed by linking isolated conductive elements in parallel to buses. Forming isolation connections on a high metal level enables location of shorted elements using voltage contrast on partially deprocessed or partially fabricated test circuits.

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Номер записи: 86

03-01-2013 дата публикации

Semiconductor apparatus and stacked semiconductor apparatus

Номер: US20130001548A1

Автор: Chun Seok Jeong, Jae Jin Lee

Принадлежит: Hynix Semiconductor Inc

A semiconductor apparatus includes a TSV formed to be electrically connected with another chip and a TSV test unit configured to check a capacitance component of the TSV to generate a TSV abnormality signal.

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Номер записи: 87

03-01-2013 дата публикации

Fault mode circuits

Номер: US20130002272A1

Автор: Erik Jan Marinissen, Mustafa Badaroglu, Paul Marchal

Принадлежит: Interuniversitair Microelektronica Centrum vzw IMEC

A test circuit and method for testing through-silicon-vias (TSVs) in three-dimensional integrated circuits (ICs) during each phase of manufacturing is disclosed. In one aspect, the method includes testing for faults in each individual TSV, TSV-under-test, shorts between a TSV-under-test, and TSVs in close proximity and for connections between the TSV-under-test and another tier in the ICs. A test circuit has three switchable current paths connected to a power supply via a pull-up resistor and switches: a calibration path, a short path, and a current measurement path. A power supply is connected to the measurement path, and the calibration path and the short path are connected to ground via respective pull-down resistors. For each TSV-under-test, the desired operation mode is selected by the closure of different combinations of switches. The current flowing through the pull-up resistor in each operation mode indicates whether the TSV-under-test has passed or failed the test.

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Номер записи: 88

03-01-2013 дата публикации

Aging degradation diagnosis circuit and aging degradation diagnosis method for semiconductor integrated circuit

Номер: US20130002274A1

Автор: Eisuke Saneyoshi, Koichi Nose

Принадлежит: NEC Corp

Provided is an aging degradation diagnosis circuit, including: a first delay circuit including a gate array for allowing aging degradation to progress, the first delay circuit being configured to delay an input signal and output a first output signal; a second delay circuit including a gate array having the same number of stages as the first delay circuit, the second delay circuit being configured to delay an input signal and output a second output signal; and an arbitrary delay unit, which is capable of varying a delay period in the second delay circuit by a predetermined amount. A delay comparison unit outputs comparison information obtained by relatively comparing delays between the first output signal and the second output signal. An adjustment unit uses the comparison information, to thereby readjust the delay period in the second delay circuit.

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Номер записи: 89

03-01-2013 дата публикации

System And Method For Automated Set-Top Box Testing Via Configurable Event Time Measurements

Номер: US20130002887A1

Автор: Jeremy Bruce-Smith

Принадлежит: Jeremy Bruce-Smith

The present application provides a user configurable test system for the automatic detection of events on a set-top box (STB) and the determination of their timing. The system relies upon performing metric calculations on the A/V output of the STB and measuring the duration of the event by reference to a set of user defined metrics satisfying a set of user defined conditions. The system is particularly suited to zap time measurement

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Номер записи: 90

10-01-2013 дата публикации

Removal apparatuses for semiconductor chips and methods of removing semiconductor chips

Номер: US20130008020A1

Автор: Jaeyong Park, Junyoung Ko, Kyhyun Jung, Whasu Sin

Принадлежит: SAMSUNG ELECTRONICS CO LTD

A removal apparatus for a semiconductor chip may include a stage configured to support a board on which the semiconductor chip is mounted by bumps, a laser configured to irradiate a laser beam into the board over an area larger than the semiconductor chip, and a picker configured to cause the laser beam to penetrate the semiconductor chip locally and to separate the semiconductor chip from the board. A method of removing a semiconductor chip from a board may include loading the board, on which the semiconductor chip is mounted by bumps, on a stage; irradiating a laser beam into the semiconductor chip to melt the bumps and to separate the semiconductor chip from the board; continuously irradiating the laser beam into the board on which solder pillars, that are residues of the bumps, remain to melt the solder pillars; and removing the solder pillars.

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Номер записи: 91

17-01-2013 дата публикации

Semiconductor device and test method

Номер: US20130015587A1

Автор: Akihiko Okutsu, Hitoshi Saito, Yoshiaki Okano

Принадлежит: Fujitsu Semiconductor Ltd

A semiconductor device includes a semiconductor substrate including an element region, an inner sealing and an outer sealing which are formed on the element region and have a first opening part and a second opening part, respectively, a multilayer interconnection structure which is formed on the substrate and stacks multiple inter-layer insulation films each including a wiring layer, a moisture resistant film formed between a first inter-layer insulation film and a second inter-layer insulation film which are included in the multilayer interconnection structure, a first portion which extended from a first side of the moisture resistant film and passes the first opening part, a second portion which extended from a second side of the moisture resistant film and passes through the second opening part, and a wiring pattern including a via plug which penetrates the moisture resistant film and connects the first portion and the second portion.

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Номер записи: 92

17-01-2013 дата публикации

Current detection apparatus

Номер: US20130015842A1

Автор: Yasunori KAWAGUCHI

Принадлежит: Yazaki Corp

A current detection apparatus includes two magnetic detectors that are arranged oppositely on a front surface and a back surface of a board which is located above a current path in order to detect a strength of a magnetic field, an electromagnetic shielding frame member that is mounted on the current path so that the two magnetic detectors and a part of the current path are accommodated inside the electromagnetic shielding frame member, and a control circuit that determines whether a failure which occurs in either of the two magnetic detectors from a difference between magnetic fields detected by the two magnetic detectors, respectively. Sensitivities of the two magnetic detectors are made adjusted so that current values outputted from the two magnetic detectors depending on detected magnetic fields are identical to each other in a normal state.

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Номер записи: 93

17-01-2013 дата публикации

Temperature measurement of active device under test on strip tester

Номер: US20130015869A1

Автор: Chi Lung WONG, Ezana Haile ABERRA, Ronaldo FRANCISCO, Tim MESSANG

Принадлежит: Microchip Technology Inc

A plurality of devices under test (DUT) are arranged in a strip tester having a temperature controlled heater block. Each DUT has a respective set of electrical test probes and a thermally conductive test probe for electrically and thermally coupling, respectively, of the strip tester to the DUTs. Temperature measurement of each of the plurality of DUTs is performed by a temperature measuring device. The temperature measuring device can be part of the test board of the strip tester and will be in thermal communications with the DUT through the thermally conductive test probe, or temperature of the DUT can be measurement with an RTD embedded in the thermally conductive test probe, thereby providing faster thermal response time.

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Номер записи: 94

17-01-2013 дата публикации

Cable assembly, connector and semiconductor tester

Номер: US20130015873A1

Автор: Shin Sakiyama, Teruhito Suzuki

Принадлежит: Advantest Corp, Molex Japan LLC

In a cable assembly, when auxiliary ground conductor is provided so as to face the lower surface of supporting insulating member, elastically-deformed piece in an elastically deformed status comes in contact with the tip of ground terminal protruding from the lower surface of supporting insulating member.

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Номер записи: 95

24-01-2013 дата публикации

Wafer prober integrated with full-wafer contacter

Номер: US20130021052A1

Автор: Morgan T. Johnson

Принадлежит: Advanced Inquiry Systems Inc

Methods and apparatus for testing unsingulated integrated circuits on a wafer include adapting a wafer prober for use with full-wafer-contacter disposed on the wafer. Some embodiments include placing wafer on a chuck of the prober, aligning the wafer to a full-wafer contacter incorporated in the wafer prober, removably attaching the wafer to the full wafer contacter, separating the wafer from the chuck, and making electrical contact to one or more integrated circuits of the wafer by making physical contact with a surface of the full-wafer contacter that faces away from the wafer.

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Номер записи: 96

31-01-2013 дата публикации

Thin-wafer current sensors

Номер: US20130029432A1

Автор: Mario Motz, Udo Ausserlechner

Принадлежит: INFINEON TECHNOLOGIES AG

Embodiments relate to IC current sensors fabricated using thin-wafer manufacturing technologies. Such technologies can include processing in which dicing before grinding (DBG) is utilized, which can improve reliability and minimize stress effects. While embodiments utilize face-up mounting, face-down mounting is made possible in other embodiments by via through-contacts. IC current sensor embodiments can present many advantages while minimizing drawbacks often associated with conventional IC current sensors.

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Номер записи: 97

07-02-2013 дата публикации

Detecting defects on a wafer

Номер: US20130035876A1

Автор: Junqing Huang, Lisheng Gao, Richard Wallingford, Stephanie Chen, Tao Luo, Yong Zhang

Принадлежит: KLA Tencor Corp

Methods and systems for detecting defects on a wafer are provided.

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Номер записи: 98

14-02-2013 дата публикации

Photovoltaic Array Systems, Methods, and Devices with Improved Diagnostics and Monitoring

Номер: US20130038129A1

Автор: Paul Bundschuh, William C. Alexander

Принадлежит: Ideal Power Converters Inc

Devices, systems and methods for operating, monitoring and diagnosing photovoltaic arrays used for solar energy collection. The system preferably includes capabilities for monitoring or diagnosing an array by automatically disconnecting portions of the array during normal service (when load is not maximum, and observing the resulting change in electrical characteristics. More intensive diagnostic procedures can be launched if needed. One embodiment provides for performing monitoring or diagnostic operations on the array in daylight or at night. Another embodiment allows monitoring or diagnostic operations to be performed on a portion of the array while other parts of the array continue to collect energy. Yet another embodiment provides a safety mode for an array for maintenance or during emergencies.

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Номер записи: 99

07-03-2013 дата публикации

Handler and part inspection apparatus

Номер: US20130058741A1

Автор: Hiroaki Fujimori, Nobuo Hasegawa, Toshioki Shimojima

Принадлежит: Seiko Epson Corp

A handler includes at least one transport section which transports a transport target onto a base. The transport section includes a plurality of first elevating sections which respectively move up and down a plurality of gripping sections which grip the transport target, and a single second elevating section which moves up and down all the plurality of first elevating sections. In connection of the transport target to a connection destination, a part of the plurality of first elevating sections are driven to descend, and the remaining part thereof are driven to ascend.

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Номер записи: 100