МИКРОСКОП С ТЕРМОЛИНЗОЙ

Настольный, имеющий размер портативного компьютера микроскоп с термолинзой содержит пропускающую свет анализирующую ячейку, в которой образован микроканал для пропускания или хранения образца жидкости и которая расположена между пропускающими свет верхней и нижней подложками, источники возбуждающего и зондирующего света, оптическую систему микроскопа, оптическую систему обнаружения и оптический детектор для обнаружения света от оптической системы обнаружения. Оптическая система микроскопа включает дихроичное зеркало для синтезирования возбуждающего света концентрично с зондирующим, первую призму и объектив, расположенный непосредственно под первой призмой. Источники возбуждающего и зондирующего света и оптическая система микроскопа интегрированы в верхнюю подложку таким образом, что синтезированный свет от источников возбуждающего и зондирующего света проходит через первую призму и объектив в образец жидкости, в котором под действием возбуждающего света образуется термолинза. Оптическая ...

ОПТИЧЕСКОЕ УСТРОЙСТВО

Изобретение относится к области исследования и анализа материалов. Оптическое устройство содержит источник оптического излучения, приёмник оптического излучения и направляющий элемент в виде объёмной фигуры с плоскими гранями из твердотельного материала, прозрачного для длин волн заданного диапазона, в котором выполнена интегральная оптическая структура, сформированная путём модификации показателя преломления. Интегральная оптическая структура содержит по меньшей мере один волновод с подводящим и отводящим участками, расположенными под углом друг к другу и с одного конца сходящимися на плоской грани направляющего элемента, являющейся рабочей, а с другого выходящими через другие плоские грани направляющего элемента, являющиеся соответственно подводящей и отводящей. Источник излучения пристыкован к подводящей, а приёмник эмиссионного сигнала к отводящей грани съёмного элемента. Технический результат заключается в повышении прочности при максимальной компактности устройства. 6 з.п. ф-лы, 1 ...

INTEGRIERTES OPTOELEKTRONISCHES HALBLEITERGERAET MIT EINEM TE/TM-MODENTEILER.

A METHOD OF MAKING A COMPONENT FOR A MICROELECTRONIC CIRCUIT AND A SEMICONDUCTOR DEVICE AND AN OPTICAL WAVEGUIDE MADE BY THAT METHOD

SCHMELZQUARZGLAS ENTHALTENDES ALUMINIUM

SCHMELZQUARZGLAS ENTHALTEND ALUMINIUM

SILIZIUMWAFER MIT MONOLITHISCHEN OPTOELEKTRONISCHEN KOMPONENTEN

Optischer Wellenleiter mit einer reduzierten Asymmetrie des Modenprofils und optisches Übertragungsverfahren

Photstructurable body and process for treating glass and/or a glass-ceramic

Preparation of embossing shims

Optical waveguide device fabrication

OPTICAL WAVEGUIDE STRUCTURES AND THEIR FABRICATION

An optical waveguide structure 4 is formed utilizing a material having a first state in which it does not undergo plastic flow and is homogeneous, dielectric and isotropic, and is essentially transparent to electromagnetic radiation at a wavelength that is within the optical spectrum, and also having a second state, the material being convertible from one of its first and second states to the other state by irradiation with energy at a predetermined wavelength. A layer of the material 6 in its unconverted state is deposited on a support member 2 having a refractive index less than that of the material in its first state. Lateral boundaries of a body to be formed on the support member 2 are defined by means of a mask 8 having areas 10 that are substantially transparent to energy at the predetermined wavelength and areas that are substantially opaque to energy at the predetermined wavelength. The layer of material is irradiated through the mask with energy at the predetermined wavelength ...

Improvements in optical waveguides

A thin film optical waveguide comprises a polymeric waveguiding film supported on a substrate, the film comprising a homopolymer of vinylpyridine or of a derivative of vinylpyridine in which the pyridine heterocyclic nucleus is substituted. Alternatively, a copolymer containing a major proportion of vinylpyridine, or of said derivative thereof, may be used in the film. A layer of a material having a lower refractive index may cover the film. The polymer may be modified to increase its capacity for refractive index variation in response to an electric field, by inclusion in the structure of the polymer of at least one optically non-linear moiety. The polymer may also include cross-linking. The invention also relates to laser devices wherein a laser dye is incorporated in the polymer.

Integrated optical components on a silicon-on-insulator chip

A method of fabricating an integrated optical component on a silicon-on-insulator chip comprising a silicon layer 1 separated from a substrate 2 by an insulating layer 3. The component has a first set of features, eg a rib waveguide 5 at a first level in the silicon layer 1 adjacent the insulating layer 3 and a second set of features, eg a triangular section 6B at a second lever in the silicon layer 1 further from the insulating layer 3. The method involves selecting a silicon-on-insulator chip having a silicon layer of sufficient thickness for the first set of features, then fabricating the first set of features in the silicon layer at a first level, increasing the thickness of the silicon layer in selected areas to form a second level of the silicon layer over part of the first level and then fabricating the second set of features at the second level in the silicon layer.

Production of an integrated optical device

ULTRAFINE TUBE & METHOD FOR ITS PRODUCTION

Optical conductor having at least three layers

Optical conductors or waveguides for making interconnections in electronic or photonic equipment may need to follow complex routes. Rigid, rod-like waveguides and individual point-to-point optical fibers are not entirely satisfactory. It is proposed to form optical conductors in the middle layer of a laminar body, for example a three-layer sandwich board 10, by irradiating the board by means of a collimated beam of light 20, for example ultra-violet light. The middle layer 12 of the board is made of a material, for example polycarbonate, which has a refractive index that increases when it is exposed to the light beam. The light beam may be moved relative to the board to trace the required path of the optical conductor which is formed as a higher refractive index channel 22 in the middle layer 12. Monomode or multimode conductors can be produced merely by varying the width of the light beam and the thickness of the middle layer. Alternatively, the laminar body may be exposed through a photomask ...

Fabrication of substrates for planar waveguide devices and planar waveguide devices

Optical waveguide and method for fabricating the same

Printed circuit board for electrical and optical signals and method for producing the same

CHANNEL WAVEGUIDES

Apparatus comprising a cylindrical substrate and an integrated optical circuit

Method of fabricating an optoelectronic component

Siliconized heterogeneous optical engine

PROCEDURE FOR THE PRODUCTION OF AN OPTICAL WAVE LEADER

MULTILEVEL OPTICAL STRUCTURES

MANUFACTURING PROCESS FOR A OPTOELEKTRI HYBRID PLATE

OPTICAL TRANSVERSE ELECTROMAGNETIC WAVE WITH A REDUCED ASYMMETRY OF THE FASHION PROFILE AND OPTICAL TRANSMISSION METHOD

CONNECTION OF MATERIALS AT LOW TEMPERATURES

PROCEDURE FOR THE PRODUCTION OF AN OPTICAL WAVE LEADER WITH AN ESSENTIALLY PLANAR SUBSTRATE

PROCEDURE FOR MANUFACTURING LIGHT CONDUCTORS WITH AT LEAST TWO LIGHT-CONDUCTING PATHS

MANUFACTURING PROCESS OF PLANAR TRANSVERSE ELECTROMAGNETIC WAVES

TRANSPARENT GLASS CERAMICS OF SMALL EXPANSION, SUBSTRATE FROM THIS GLASS CERAMIC AND OPTICAL TRANSVERSE ELECTROMAGNETIC WAVE ELEMENT

MULTI-LAYER GLASS FIBER WITH RADIATIONEXPAND REFRACTIVE INDEX CONE

PLANAR OPTICAL TRANSVERSE ELECTROMAGNETIC WAVE WITH TWO SLOTS

Hybrid organic-inorganic planar optical waveguide device

METHOD FOR FABRICATING OPTICAL DEVICES IN PHOTONIC CRYSTAL STRUCTURES

Writing of photo-induced structures

Multiphoton curing to provide encapsulated optical elements

Deep uv laser internally induced densification in silica glasses

WAVEGUIDES ASSEMBLED FOR TRANSVERSE-TRANSFER OF OPTICAL POWER

AN ABSORBING LAYER FOR MINIMISING SUBSTRATE EXPOSURE DURING THE UV WRITING OF A WAVEGUIDE GRATING IN ADDITION TO A BIREFRINGENT CONTROL SYSTEM

A waveguide having photosensitive properties is disclosed comprising: a waveguide substrate (2); a first cladding layer formed on the waveguide substrate; a UV absorbing layer (9) formed on the first cladding layer; a UV sensitive layer (4) having optical transmission properties adapted to be changed with UV irradiation, the layer formed on or closely adjacent the UV absorbing layer; and a second cladding layer, being substantially UV transparent, on the UV sensitive layer. Preferably, there is further provided a third cladding layer intermediate of the UV absorbing layer and the UV sensitive layer. The UV absorbing layer comprises a germanosilicate material. The absorbing layer can be adapted to change a physical property upon UV absorption. The UV absorbing layer can be variable thickness, the thickness being in accordance with predetermined requirements.

GRADED INDEX WAVEGUIDE

A planar waveguide that has a graded index layer at the core/cladding interface to reduce scattering losses due to core/classing interfave roughness. The refractive index at the core/cladding interface is changed from that of the core to that of cladding gradually by having a graded index layer. The graded index layer reduces the scattering of light traveling in the waveguide by reducing the effect of the roughness at the abrupt interface between the core and the cladding. Using a proper design, the graded index layer also minimizes the modal and polarization dispersion of the optical mode traveling in the waveguide.

METHOD OF FABRICATING AN INTEGRATED OPTICAL COMPONENT

A method of fabricating an integrated optical component on a silicon-on- insulator chip comprising a silicon layer (1) separated from a substrate (2) by an insulating layer (3), the component having a first set of features, eg a rib waveguide (5) at a first level in the silicon layer (1) adjacent the insulating layer (3) and a second set of features, eg a triangular section (6B) at a second level in the silicon layer (1) further from the insulating layer (3), the method comprising the steps of: selecting a silicon-on- insulator chip having a silicon layer (1) of sufficient thickness for the first set of features; fabricating the first set of features in the silicon layer (1) at a first level in the silicon layer; increasing the thickness of the silicon layer (1) in selected areas to form a second level of the silicon layer (1) over part of the first level; and then fabricating the second set of features at the second level in the silicon layer (1).

LOW-LOSS WAVEGUIDE AND METHOD OF MAKING SAME

A method of reducing the scattering losses that involves smoothing of the core/cladding interface and/or change of waveguide geometry in high refractive index difference waveguides. As an example, the SOI-based Si/SiO2 waveguides are subjected to an oxidation reaction at high temperatures, after the waveguide patterning process. By oxidizing the rough silicon core surfaces after the patterning process, the core/cladding interfaces are smoothened, reducing the roughness scattering in waveguides.

METHOD OF SELF-ASSEMBLY AND OPTICAL APPLICATIONS OF CRYSTALLINE COLLOIDAL PATTERNS ON SUBSTRATES

This invention describes methods of synthesis and applications of planarized photonic crystals. Provided are simple, quick, reproducible and inexpensive methods that combine self-assembly and lithography to achieve the first examples of vectorial control of thickness, structure, area, topology, orientation and registry of colloidal crystals that have been patterned in substrates for use in lab-on-chip and photonic chip technologies. 1-, 2 and 3- D colloidal crystals patterned either on or within substrates can be used for templating inverted colloidal crystal replica patterns made of materials like silicon as well as building micron scale structural defects in such colloidal crystals. These photonic crystals can form the basis of a range of optical devices that may be integrated within photonic chips and coupled to optical fibers and/or waveguides to enable development of highly compact planarized optically integrated photonic crystal devices and circuits for use in future all-optical computers ...

WRITING OF PHOTO-INDUCED STRUCTURES

A method of writing a photo-induced structure into a photosensitive material substrate, the method comprising the steps of creating an interference pattern utilising at least two light beams, exposing the substrate to the interference pattern for photo-inducing material changes in the substrate, and creating an irregularity in the interference pattern by controlling a wavefront of at least one of the beams, for creating a functional defect in the photo-induced structure.

OPTICAL WAVEGUIDES WITH TRENCH STRUCTURES

Arrangements using air trench cladding enables minimization of the evanescent tail to suppress light coupling to radiation modes, resulting in low-loss bends and splitters. Structures including sharp dends and T-splitters without transmission loss, crossings without crosstalk, and couplers from/to fibers and without-of-plane waveguides without substantial loss are provided with such air trench claddings. Air trench sidewall cladding of waveguides pushes evanescent tails toward top and bottom claddings to enhance coupling between vertically positioned waveguides. Fabrication processes using wafer bonding technology are also provided.

HIGH-DENSITY OPTICAL WAVEGUIDE STRUCTURE AND PRINTED CIRCUIT BOARD AND PREPARATION METHOD THEREOF

The disclosure relates to a high-density optical waveguide structure, a printed circuit board and a preparation method thereof. The high-density optical waveguide structure comprises an undercladding layer, a core layer and an upper cladding layer in sequence; wherein, the lower cladding layer is arranged at intervals. The trench is filled with an optical waveguide material to form a core layer. The waveguide structure integrates an optical waveguide into a PCB to realize photoelectric interconnection. The waveguide structure can better achieve higher parallel interconnection density, maintain good signal integrity, reduce device and device size, and at the same time, consume less power. The structure is configured to easily dissipate heat, enabling a simpler physical architecture and design, maximizing the wiring space of printed circuit boards, facilitating the fabrication of ultra-fine wire boards; and improving the wiring density and reliability of existing manufacturing methods.

MAKING GROOVES IN PLANAR SILICA OPTICAL WAVEGUIDES

A method of producing a planar waveguiding device having a core (10) and a cladding (21, 22, 23). The cladding has grooves (11, 12) directly interfacing (15, 16) with the core (10). A layer of core glass (10) is deposited on the surface of a substrate (24). This layer is etched to produce a shaped layer which includes a first core portion (10) having the same configuration as the intended core (10) and an expanded core portion (30) wherein the core glass extends beyond the intended core boundary. A glass covering layer (21) is deposited over the etched core glass and grooves (11, 12) are produced by etching through the covering layer (21) and into said expanded core portion (30). This removes the core glass (30) extending beyond the intended core (10) boundary to produce interfaces (15, 16) between the core (10) and the grooves (11, 12). All of the glasses are silica with additives to adjust the refractive index and/or the melting point.

RADIATION-TRANSMISSIVE FILMS ON GLASS ARTICLES

A glass article comprising a glass substrate and a diamond-like film deposited on the substrate is disclosed. The glass article is responsive to actinic radiation, such as being capable of demonstrating a change in refractive index upon exposure to actinic radiation. The film permits passage of the actinic radiation through the film and into the substrate. In specific implementations, the film comprises at least about 30 atomic percent carbon, from about 0 to about 50 atomic percent silicon, and from about 0 to about 50 atomic percent oxygen on a hydrogen-free basis. Furthermore, a method of depositing a diamond-like film onto a glass substrate is disclosed, as well as fiber optic gratings.

OPTICAL DEVICES AND DIGITAL LASER METHOD FOR WRITING WAVEGUIDES, GRATINGS, AND INTEGRATED OPTICAL CIRCUITS

The invention relates to devices having periodic refractive index modulat ion structures and fabrication methods for the devices using a laser means. By focusing a pulsed laser beam into a transparent material substrate, a pat h of laser modified volumes can be formed with modified refractive index com pared with the unprocessed material. By selecting appropriate laser paramete rs and relative scan speed, the laser modified path defines an optical waveg uide. Separation distance of the individual modified volumes define a period ic modification pattern along the waveguide path, so that the waveguide stru ctures also exhibit grating responses, for example, as spectral filters, Bra gg reflectors, grating couplers, grating sensors, or other devices. This met hod of direct laser fabrication enables one-step fabrication and integration of periodic or aperiodic refractive-index modulation devices together with optical waveguiding properties to enable low-cost, multifunctional I D, 2D o r 3D optical ...

FLEXIBLE WAVEGUIDES FOR OPTICAL COHERENCE TOMOGRAPHY

A system and method for depth-resolved imaging of a sample are presented. The system for depth-resolved imaging of a sample includes a substrate of substantially flexible material, a plurality of waveguides disposed on the substrate, an optical element disposed at a distal end of the plurality of waveguides, and one or more interferometers. Light is collected from the sample through the optical element and plurality of waveguides on the flexible substrate on its path to the one or more interferometers. The interferometers are configured to combine a reference light with the light received by at least a portion of the plurality of waveguides to resolve contributions from one or more depths of the sample. The system further includes a light guiding element coupled between the plurality of waveguides and the one or more interferometers.

OPTICAL WAVEGUIDE WITH A SUBSTANTIALLY PLANAR SUBSTRATE, AND PROCESS FOR ITS PRODUCTION

SUB-MICRON IMAGING

TREATMENT OF GLASS SUBSTRATES TO COMPENSATE FOR WARPAGE AND DISTORTION

A method for forming a substantially flat planar lightwave optical circuit which has a substantially flat planar silica substrate and a sintered glassy lightguiding layer over the silica substrate. The structure is given a post treatment at an elevated temperature for a time sufficient to flatten said structure and compensate for distortion. Alternatively, the silica substrate may be heated and presagged to a predetermined degree to compensate for distortion or warpage which will occur in later processing.

SOLVENT-ASSISTED LITHOGRAPHIC PROCESS USING PHOTOSENSITIVE SOL-GEL DERIVED GLASS FOR DEPOSITING RIDGE WAVEGUIDES ON SILICON

The process for fabricating a ridge waveguide on a substrate uses a photosensitive sol-gel glass material prepared, according to a first embodiment, by mixing methacryloxypropyltrimethoxysilane (H2C=C(CH3)CO2(CH2)3Si(OCH3)3) and methacrylic acid (H2C=C(CH3)COOH) or, according to a second embodiment, by mixing methacryloxypropyltrimethoxysilane (H2C=C(CH3)CO2)CH2)3Si(OCH3)3) with bis(s-butoxy)aluminoxytriethoxysilane. A thick film of photosensitive sol-gel glass material is first dip coated on at least a portion of the substrate. A photomask is applied to the film of photosensitive sol-gel glass material, and this sol-gel material is exposed to ultraviolet radiation through the opening(s) of the photomask to render a portion of the film insoluble to a given solvent and thereby imprint the ridge waveguide in that film. The thick film is then soaked in this solvent, for example n-propanol to dissolve the unexposed portion of the sol-gel film and leave on the substrate the exposed film portion ...

PLANAR WAVEGUIDES

Planar waveguides are produced by using radiation to write path regions into a photosensitive layer. Originally, the photosensitive layer had the same refractive index as the confining regions, e.g., it consists of silica doped with oxides of Ge and B. Composite path regions are produced by depositing a glass soot onto a partial region. On sintering the soot melts to fill up the empty spaces and thereby create a composite layer.

A METHOD OF MAKING AN OPTICAL WAVEGUIDE TO FIBRE CONVECTOR USING A FREE-STANDING, FLEXIBLE WAVEGUIDE SHEET

The invention relates to a pigtailing method, i.e., the invention provides an optical device comprising a substrate on which are integrated a layered optical waveguide component (3) and optical fibre ends (13). The optical fibre ends are positioned in grooves (10). The method involves providing a substrate (7) comprising grooves (10), notably V-shaped grooves, with a separately made optical waveguide component (3). The component (3) is made on a separate flat substrate (1) and released by virtue of a releasable layer (2) present on the flat substrate (1). An advantageous releasable layer is made of a watersoluble salt. The invention also pertains to flexible waveguide sheets (3) such as can be used in the above method or, if provided with waveguide channels (12), as flexible waveguide components themselves.

HYBRID ORGANIC-INORGANIC PLANAR OPTICAL WAVEGUIDE DEVICE

A planar optical device is formed on a substrate (12) and comprising an array of waveguide cores (14) and a cladding layer (16) formed contiguously with the cores. At least one of the array of waveguide cores (14) and the cladding layer (16) is an inorganic-organic hybrid material that comprises an extended matrix containing silicon and oxygen atoms with at least a fraction of the silicon being directly bonded to substituted or unsubstituted hydrocarbon atoms. In accordance with other embodiments of the invention, a method of forming an array of cores comprises the steps of preparing a core composition precursor material; partially hydrolyzing and polymerizing the material; forming an array of waveguide cores under conditions effective to form an inorganic-organic hybrid material that comprises an extended matrix containing silicon and oxygen atoms with at least a fraction of the silicon being directly bonded to substituted or unsubstituted hydrocarbon atoms.

VERFAHREN ZUR HERSTELLUNG INTEGRIERTER OPTISCHER ELEMENTE UND NACH DEM VERFAHREN HERGESTELLTES OPTISCHES ELEMENT.

Lichtleiteranordnung und Verfahren zur Herstellung solcher Leiteranordnungen

Procedure for the production of a diffraction grating, light conductor construction unit as well as their uses.

Procedure for the production of an optical wave leader and after manufactured optical transverse electromagnetic wave

An optical waveguide chip and a manufacturing method

Optical waveguide photosensitive resin composition, photocurable film for forming optical waveguide core layer, optical waveguide using same, and mixed flexible printed circuit board for optical/electrical transmission

MANUFACTORING PROCESS Of a DEVICE OF OPTICAL WAVEGUIDE

Pour la fabrication du dispositif de guide d'ondes optique, on forme une couche de revêtement inférieure (102) sur la surface d'un substrat de verre (100) une couche de métal (104) sur la couche de revêtement inférieure (102) et un motif métallique (W) en attaquant sélectivement la couche de métal (104) pour former un noyau de guide d'ondes dans celle-ci. Ensuite, on forme une couche de polymère optique (110) dans le motif métallique, on fait durcir la couche de polymère optique (110) dans la partie débarrassée de métal du motif métallique en projetant de la lumière ultraviolette (108) sur la surface de dessous du substrat (100) , et on forme le noyau de guide d'ondes en retirant la partie restante de la couche de polymère optique (110) , à l'exception de sa partie durcie, ainsi que la couche de métal (104) .

Photonic system and method of manufacturing the same

INTEGRATED OPTOELECTRONIC SEMICONDUCTOR DEVICE INCLUDING A SEPARATOR/TE POLARIZATIONS OF THE TM

PHOTONIC DEVICE COMPRISING A LASER OPTICALLY CONNECTED TO A SILICON WAVEGUIDE AND METHOD FOR MANUFACTURING SUCH A PHOTONIC DEVICE

PHOTONIC CHIP WITH FOLDING OF OPTICAL PATH AND INTEGRATED COLLIMATING STRUCTURE

Dispositif semiconducteur optoélectronique intégré incluant un séparateur des polarisations TE/TM

Dispositif semiconducteur optoélectronique intégré incluant un séparateur des polarisations TE/TM, ce séparateur comprenant deux guides de lumière parallèles et monomodes G1 et G2 dont l'un reçoit à l'entrée un signal lumineux, et comprenant des moyens pour effectuer la séparation de ce signal en ses deux composantes TE et TM, dont l'une TE est transportée en sortie par l'un des guides, et l'autre TM est transportée en sortie par l'autre guide, caractérisé en ce que : - les guides sont formés d'au moins une hétérostructure S/C1 et de deux rubans R de guidage parallèles érigés en surface, de dimension transversale W et de hauteur h séparés par une distance bord à bord d; - et les moyens pour effectuer la séparation des composantes TE et TM consistent en une couche métallique s'étendant entre les rubans R de guidage en surface de la structure sur une longueur D dont la valeur est liée à la longueur de couplage de la composante TE par la relation D = Lc (TE), les paramètres des grandeurs physiques ...

MANUFACTORING PROCESS OF JUST OPTICAL COMPONENTS USING RESEAUXDE BRAGG AND OPTICAL COMPONENTS THUS OBTAINED

Manufactoring process of a guide of optical wave planar entirely containing polymers, and sonutilisation in an integrated optical insulator

L'invention concerne un procédé pour fabriquer un guide d'onde optique planaire, entièrement à base de matériaux polymériques, caractérisé en ce que l'on dépose sur un substrat semi-conducteur, un polymère actif entouré de deux couches de polymères tampons, choisis de telle sorte que la différence d'indice de réfraction de part et d'autre du polymère actif est comprise entre 0,005 et 0,5 et de préférence comprise entre 0,01 et 0,4.

METHOD OF MAKING A WAVEGUIDE

L'invention concerne un procédé de fabrication d'un miroir optique dans une plaque de verre (80), comprenant les étapes successives suivantes : balayer une surface de la plaque (80) par un faisceau laser (84) dirigé de façon oblique par rapport à ladite surface, pour former une tranchée (86) selon le dessin du miroir à former, la durée des impulsions de ce laser étant comprise entre 1 et 500 femtosecondes ; traiter à l'acide fluorhydrique ; et remplir la tranchée (86) d'un métal.

Optical path switching device for high-speed broadband optical communication system, comprises core whose end surfaces are arranged in matrix form at respective end surfaces of cladding

Ce dispositif comprend un revêtement (12) ayant une surface formant miroir (13) et au moins trois noyaux (11) enserrés dans le revêtement et formant des trajets optiques continus, des première et seconde surfaces d'extrémité de noyau (11a, 11b) étant exposées dans des première et seconde surfaces (12a, l2b) d'extrémité du revêtement, chacun des trajets optiques s'étendant de la première surface d'extrémité (lia) jusqu'à la surface formant miroir (13), changeant de direction à ce niveau et s'étendant jusqu'à la seconde surface d'extrémité (11b), les première et seconde surfaces d'extrémité (11a, 11b) étant disposées de façon bidimensionnelle dans les première et seconde surfaces d'extrémité (12a, 12b). Application notamment à des composants optoélectroniques et/ ou des guides d'ondes optiques.

Warpage and distortion are corrected in planar light wave optical

La présente invention propose une méthode pour former un circuit optique sensiblement plat pour onde lumineuse planaire ; ladite méthode faisant intervenir un substrat (10) de silice planaire sensiblement plat et une couche (12) vitreuse frittée de guidage de lumière sur ledit substrat de silice (10) . La structure subit un post-traitement thermique à une température élevée et pendant un temps suffisant pour son aplatissement et la compensation des distorsions. Selon une alternative, le substrat de silice est chauffé et pré-fléchi à un degré pré-déterminé de façon à compenser la distorsion et le gauchissement qui se produira ultérieurement dans le procédé.

PROCESS FOR PRODUCING FILMY OPTICAL WAVEGUIDE

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

HIGH REFRACTIVE INDEX MATERIAL

Disclosed is a high refractive index material having a high refractive index, which enables to form a waveguide by a simpler method. Also disclosed are a high refractive index member made from the high refractive index material, and an image sensor. The high refractive index material contains a resin (A) having a structural unit represented by the following general formula (a-1). (a-1) [In the formula, R represents a hydrocarbon group, R represents a hydrogen or a hydrocarbon group, and m represents 0 or 1.]12 © KIPO & WIPO 2009 ...

위치 센서의 제법 및 그에 의해 얻어진 위치 센서

... 스페이스 절약화를 도모할 수 있고, 또한, 코어의 격자형 부분 이외의 부분에서의 광의 불필요한 누설(산란)을 방지할 수 있는 위치 센서의 제법 및 그에 의해 얻어진 위치 센서를 제공한다. 이 위치 센서의 제법은, 코어 형성용의 감광성 수지층(2A)을 노광하여, 격자형 부분(C)과 이 격자형 부분(C)의 외주를 따르도록 구부려져 배치된 외주 부분(S)으로 형성된 코어(2)와, 외주 부분(S)에 대응하는 부분에, 코어(2)와 동일한 형성 재료로 이루어지는 비광로용의 더미 코어(D)를 형성한다. 그리고, 코어 형성용의 감광성 수지층(2A)의 미노광 부분(2a)을 남긴 상태로, 제2 클래드층 형성용의 감광성 수지층(3A)을 피복한 후, 가열함으로써, 상기 미노광 부분(2a)의 수지와 제2 클래드층 형성용의 감광성 수지층(3A)의 수지를 혼합하여 혼합층(4A)으로 한다. 그리고, 그 혼합층(4A)을 노광하여 경화시켜 오버클래드층(4)으로 한다.

일련의 만곡부를 포함하는 도파관형 편광자를 위한 장치 및 방법

... 일련의 만곡부를 포함하는 도파관 편광자에 관한 실시예가 제공된다. 도파관 편광자는 광 도파관 디바이스 또는 회로에서 사용되기 적합하며, 편광된 광은 단일 편광 출력 등에 요구된다. 편광자 구조는 광학 디바이스의 기능과 독립적이다. 일 실시예에서 광학 편광자는, 지정된 편광 모드에서 광을 전파하도록 구성된 광 도파관을 포함하고, 전파된 광과 동일한 평면에 만곡부를 포함한다. 만곡부는 지정된 편광 모드의 전파된 광을 광 도파관 내에 포함하고 제2 편광 모드의 전파된 광을 광 도파관의 외부로 방사하도록 구성된 기하학적 구조를 갖는다.

Raman scattering light amplification device, method for producing raman scattering light amplification device, and raman laser light source using the raman scattering light amplification device

Vertical mirror in a silicon photonic circuit

A vertical total internal reflection (TIR) mirror and fabrication thereof is made by creating a re-entrant profile using crystallographic silicon etching. Starting with an SOI wafer, a deep silicon etch is used to expose the buried oxide layer, which is then wet-etched (in HF), opening the bottom surface of the Si device layer. This bottom silicon surface is then exposed so that in a crystallographic etch, the resulting shape is a re-entrant trapezoid with facets These facets can be used in conjunction with planar silicon waveguides to reflect the light upwards based on the TIR principle. Alternately, light can be coupled into the silicon waveguides from above the wafer for such purposes as wafer level testing.

A PROCESS FOR MANUFACTURING A PHOTONIC CIRCUIT WITH ACTIVE AND PASSIVE STRUCTURES

A process for manufacturing a photonic circuit (400) comprises: manufacturing on a first wafer (101) a first layer stack comprising an underclad oxide layer (102) and a high refractive index waveguide layer (103); - patterning the high refractive index waveguide layer (103') to generate a passive photonic structures; planarizing the first layer stack with a planarizing oxide layer (104) having a thickness below 300 nanometers above the high refractive index waveguide layer (103); annealing the patterned high refractive indemanufacturing on a first wafer (101) a first layer stack comprising an underclad oxide layer (102) and a high refractive index waveguide layer (103); patterning the high refractive index waveguide layer (103') to generate a passive photonic structures; planarizing the first layer stack with a planarizing oxide layer (104) having a thickness below (300) nanometers above the high refractive index waveguide layer (103); annealing the patterned high refractive index waveguide ...

INTEGRATED PHOTONICS INCLUDING WAVEGUIDING MATERIAL

A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.

APPARATUS AND METHOD FOR ANALYSIS OF MOLECULES

The present invention relates to optical confinements, method of preparing and methods of using them for analyzing molecules and/or monitoring chemical reactions. The apparatus and methods embodied in the present invention are particularly useful for high-throughput and low-cost single-molecular analysis.

PHOTONIC CRYSTAL WAVEGUIDE WITH REDUCED COUPLING LOSS TOWARDS THE SUBSTRATE

A photonic device and methods of formation that provide an area providing reduced optical coupling between a substrate and an inner core of the photonic device are described. The area is formed using holes in the inner core and an outer cladding. The holes may be filled with materials which provide a photonic crystal. Thus, the photonic device may function as a waveguide and as a photonic crystal.

OPTICAL WAVEGUIDE SPLITTER ON A WAVEGUIDE SUBSTRATE FOR ATTENUATING A LIGHT SOURCE

An optical apparatus comprises: source, primary, and secondary waveguides formed in waveguide layers on a substrate; a light source; and an optical waveguide tap. The light source launches a source optical signal along the source waveguide. The tap divides the source optical signal into a primary optical signal in the primary waveguide and a secondary optical signal in the secondary waveguide. The secondary optical signal emerges from the secondary waveguide to exit the waveguide layers at the substrate edge or to propagate within the waveguide layers as a stray optical signal without confinement by any waveguide. The stray optical signal propagates thusly unconfined into the open mouth of an optical trap that comprises one or more lateral surfaces formed in the waveguide layers and an opaque coating on the lateral surfaces, and comprises a spiral region of the optical waveguide layers with an open mouth and closed end.

MICROFABRICATION OF ORGANIC OPTICAL ELEMENTS

Method of fabricating an optical element. A photodefinable composition is provided that includes (i) a hydrophobic, photodefinable polymer, said photodefinable polymer having a glass transition temperature in the cured state of at least about 80 °C; and (ii) a multiphoton photoinitiator system comprising at least one multiphoton photosensitizer and preferably at least one phtoinitiator that is capable of being photosensitized by the phtosensitizer. One or more portions of the composition are imagewise exposed to the electromagnetic energy under conditions effective to photodefinably form at least a portion of a three-dimensional optical element.

APPARATUS AND METHOD FOR ANALYSIS OF MOLECULES

The present invention relates to optical confinements, method of preparing and methods of using them for analyzing molecules and/or monitoring chemical reactions. The apparatus and methods embodied in the present invention are particularly useful for high-throughput and low-cost single-molecular analysis.

METHOD OF PRODUCING A REFLECTING SURFACE INSIDE A SUBSTRATE

Apparatus for propagating light comprising: a substrate in which light is propagated; and a first surface of a groove formed in the substrate at which light that propagates in the substrate is reflected.

PREPARATION OF EMBOSSING SHIMS

A method for producing a shim for embossing a desired structure into an article which method comprises: (a) forming a master pattern having a contoured metalised surface which conforms to the desired structure; (b) electroforming a layer of a first metal onto the metalised surface to form a metal master; (c) releasing the metal master from the master pattern; (d) electroforming another layer of a second metal, which may be the same or different from the first metal, onto that surface of the metal master which was in contact with the contoured metalised surface to form a shim; and thereafter (e) releasing the shim from the metal master. Alternative processes for preparing master patterns capable of use in the shim production method in which the required structures are transferred onto wafers of silicon and silica.

OPTICAL WAVEGUIDE HAVING TWO OR MORE REFRACTIVE INDICES AND METHOD OF MANUFACTURING SAME

An optical tapered waveguide for use in optical arrays is described which contains at least one inclusive structure. The inclusion may possess an abrupt refractive index interface within the body of the tapered optical waveguide or it may consist of a graded refractive index region within the tapered optical waveguide. The tapered waveguide propagates light rays via total internal reflection from the sidewalls of a tapered optical waveguide. The different refractive index of the inclusion also acts to alter the direction of the light rays passing through the waveguide. The tapered waveguide is advantageously useful in an array of waveguides for use in display devices, such as for example projection display devices, off screen display devices, and direct view displays. Such displays are used in a wide range of applications including computer terminals, airplane cockpit displays, automotive instrument panels, televisions, and other devices that provide text, grapics, or video information.

OPTICAL MOUNTING BOARD, OPTICAL MODULE, OPTICAL TRANSMITTER/RECEIVER, OPTICAL TRANSMITTING/RECEIVING SYSTEM, AND METHOD FOR MANUFACTURING OPTICAL MOUNTING BOARD

An optical mounting board comprises an optical waveguide groove (11) made in a glass substrate (17) having less loss at high frequency and a connection wiring provided in the direction of the thickness of the board or a via hole (12) for heat dissipation.

ATHERMAL POLYMER NANOCOMPOSITES

The present invention is directed to a composite material comprising a nanoporous polymer matrix and a plurality of nanoparticles dispersed within said matrix, wherein the nanoparticles possess specified thermal properties. The resulting nanoporous polymer nanocomposite is an optical medium with tunable and controllable thermal properties, including the coefficient of thermal expansion (CTE), the thermal conductivity, and the thermooptic coefficient. Various optical articles can be made with such nanocomposite materials.

COPACKAGING OF ASIC AND SILICON PHOTONICS

A system and method for packing optical and electronic components. A module includes an electronic integrated circuit and a plurality of photonic integrated circuits, connected to the electronic integrated circuit by wire bonds or by wire bonds and other conductors. A metal cover of the module is in thermal contact with the electronic integrated circuit and facilitates extraction of heat from the electronic integrated circuit. Arrays of optical fibers are connected to the photonic integrated circuits.

Multilevel template assisted wafer bonding

Fabricating a multilevel composite semiconductor structure includes providing a first substrate comprising a first material; dicing a second substrate to provide a plurality of dies; mounting the plurality of dies on a third substrate; joining the first substrate and the third substrate to form a composite structure; and joining a fourth substrate and the composite structure.

Planar layer with optical path

A channel is created within a planar layer. At least a portion of an optical path is formed within the channel. An optical core medium may be deposited into the channel. In various embodiments, reflective layers are deposited within and over the channel to form the optical path. In another embodiment, a photosensitive sheet is exposed to an optical path mask in the presence of an optical source to define an optical path lying within the plane of the sheet.

Method for fabricating semiconductor thin film using substrate irradiated with focused light, apparatus for fabricating semiconductor thin film using substrate irradiated with focused light, method for selectively growing semiconductor thin film using substrate irradiated with focused light, and semiconductor element using substrate irradiated with focused light

An apparatus ( 100 ) for fabricating a semiconductor thin film includes: substrate surface pretreatment means ( 101 ) for pretreating a surface of a substrate; organic layer coating means ( 102 ) for coating, with an organic layer, the substrate thus pretreated; focused light irradiation means ( 103 ) for irradiating, with focused light, the substrate coated with the organic layer, and for forming a growth-mask layer while controlling layer thickness; first thin film growth means ( 104 ) for selectively growing a semiconductor thin film over an area around the growth-mask layer; substrate surface treatment means ( 105 ) for, after exposing the surface of the substrate by removing the growth-mask layer, modifying the exposed surface of the substrate; and second thin film growth means ( 106 ) for further growing the semiconductor thin film and growing a semiconductor thin film over the modified surface of the substrate.

Method of manufacturing optical waveguide core, method of manufacturing optical waveguide, optical waveguide, and optoelectric composite wiring board

In order to provide a method of efficiently manufacturing an optical waveguide core having an endface inclined at a predetermined angle, the following method of manufacturing an optical waveguide core is employed. The method includes: a core material layer forming step of forming a core material layer formed of a photosensitive material on a surface of a cladding layer that has been formed on a substrate; a high refractive index substance covering step of covering a surface of the core material layer with a substance having a refractive index higher than 1 by bringing the high refractive index substance into close contact with the core material layer surface; an exposure step of pattern exposing the core material layer in a predetermined core-forming shape to from a core by irradiating the core material layer on a side covered with the high refractive index substance with exposure light inclined at a predetermined angle with respect to the cladding layer surface; a high refractive index substance removing step of removing the high refractive index substance from the surface of the core material layer exposed in the exposure step; and an development step of developing the core material layer from which the high refractive index substance has been removed in the high refractive index substance removing step so as to form the core having an inclined endface.

Method of manufacturing optical waveguide having mirror face, and optoelectronic composite wiring board

In order to provide a method of manufacturing an optical waveguide, which enables the formation of a smooth mirror face, the following method of manufacturing an optical waveguide having a mirror face is used. The method includes: a photocurable resin sheet laminating step of laminating an uncured photocurable resin sheet for forming a core on a surface of a first cladding layer that has been formed on a substrate; a mirror face forming step of forming a mirror face for guiding light to the core by pressing a die provided with a blade having, in a cross-section, a 45° inclined plane into the photocurable resin sheet; a core forming step of forming a core having the mirror face positioned at an end thereof by selectively exposing to light, and developing, the photocurable resin sheet; and a cladding layer forming step of forming a second cladding layer so as to bury the core.

Photodetector structure and method of manufacturing the same

A method of manufacturing a photodetector structure is provided. The method includes forming a structural layer by making a trench in a bulk silicon substrate and filling the trench with a cladding material, forming a single-crystallized silicon layer on the structural layer, and forming a germanium layer on the single-crystallized silicon layer.

Optical coupler module having optical waveguide structure

An optical coupler module includes a semiconductor substrate disposed on the print circuit board; a reflecting trench structure formed on the semiconductor substrate; a reflector formed on a slant surface of the reflecting trench structure; a strip trench structure formed on the semiconductor substrate and connecting with the reflecting trench structure; a thin film disposed on the above-mentioned structure. The optical coupler module further includes a signal conversion unit disposed on the semiconductor substrate and the position of the signal conversion unit corresponds to the reflector; and an optical waveguide structure formed in the trench structures. The optical signal from the signal conversion unit is reflected by the reflector and then transmitted in the optical waveguide structure, or in a reverse direction to reach the signal conversion unit.

Systems and methods for manufacturing passive waveguide components

Various embodiments are directed toward systems and method for manufacturing low cost passive waveguide components. For example, various embodiments relate to low cost manufacturing of passive waveguide components, including without limitation, waveguide filters, waveguide diplexers, waveguide multiplexers, waveguide bends, waveguide transitions, waveguide spacers, and an antenna adapter. Some embodiments comprise manufacturing a passive waveguide component by creating a non-conductive structure using a low cost fabrication technology, such as injection molding or three-dimensional (3D) printing, and then forming a conductive layer over the non-conductive structure such that the conductive layer creates an electrical feature of the passive waveguide component.

Method for forming light guide layer in semiconductor substrate

A method for forming a light guide layer with improved transmission reliability in a semiconductor substrate, the method including forming a trench in the semiconductor substrate, forming a cladding layer and a preliminary light guide layer in the trench such that only one of opposite side end portions of the preliminary light guide layer is in contact with an inner sidewall of the trench, and performing a thermal treatment on the substrate to change the preliminary light guide layer into the light guide layer.

Optical waveguide production method

An optical waveguide production method is provided which reduces a transmission loss, improves alignment mark visual detectability, and ensures excellent productivity. In the optical waveguide production method, an under-cladding layer, a core and an alignment mark are formed on a surface of a metal substrate. On the other hand, a molding die is prepared which includes a cavity and an alignment mark to be associated with the alignment mark. In turn, light emitted from the side of the molding die is utilized for positioning the metal substrate and the molding die with reference to the pair of associated alignment marks. Then, an over-cladding layer is formed over the core. The alignment mark is formed from a photo-curable composition comprising the following components (A) and (B): (A) a polymerizable composition having a (meth)acrylate group; and (B) a photoradical polymerization initiator.

Waveguide photo-detector

Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.

Method for producing optical waveguide

A method for producing an optical waveguide includes following steps: firstly, providing a substrate and coating resins on the substrate to form a clad; secondly, providing a container filled with waveguide material and inject the waveguide material through a nozzle of the container to form a shape needed on the clad; thirdly, shining UV lights on the waveguide material to harden the waveguide material to form the waveguide. This new method uses less waveguide material and simplifies the steps.

Optical waveguide and method of manufacturing the same, and optical waveguide device

An optical wave guide includes an optical waveguide layer in which a core layer is surrounded by a cladding layer, a light path converting portion provided to a light entering side and a light emitting side of the optical waveguide layer respectively, a light entering portion demarcated in an outer surface of the cladding layer, in which a light is entered to the light path converting portion of the light entering side; and a light emitting portion demarcated in an outer surface of the cladding laver, in which a light from the light path converting portion of the light emitting side is emitted, wherein an outer surface of the cladding layer except the light entering portion and the light emitting portion is formed as a roughened. surface.

Optical device and method for manufacturing optical device

An object of the invention is to provide an optical device and an optical device manufacturing method wherein provisions are made to be able to substantially prevent misalignment from occurring in an optical element and prevent shifting from occurring in the optical waveguide characteristics of the optical element. The optical device includes a first optical element, a second optical element optically coupled to the first optical element, and a first silicon substrate on which the first optical element and the second optical element are mounted, wherein the second optical element includes a second silicon substrate and a waveguide substrate laminated to the second silicon substrate, and the second optical element is mounted on the first silicon substrate in such a manner that the waveguide substrate faces the first silicon substrate.

Method of manufacturing photodiode with waveguide structure and photodiode

A process to form a photodiode (PD) with the waveguide structure is disclosed. The PD processes thereby reduces a scattering of the parasitic resistance thereof. The process includes steps to form a PD mesa stripe, to bury the PD mesa stripe by the waveguide region, to etch the PD mesa stripe and the waveguide region to form the waveguide mesa stripe. In the etching, the lower contact layer plays a role of the etching stopper.

Optical waveguide fabrication method

The present invention relates to a method of manufacturing optical waveguide devices. The order of patterning/etch in the method is first a deeper etching then shallow etching. In some embodiments, the first etching forms a mesa and the second etching removes a portion of material that comprises the mesa. In addition, there can be a planarization step. The deeper trenches are desirably conducive to filling. The method may use a cross-lithography method to reduce alignment errors between multiple patterning/etching steps. The method may use an oxidation and stripping off process to smooth a surface of the waveguide and/or reduce an initial dimension of the waveguide.

Area array waveguide power splitter

A method for constructing an area array waveguide power splitter includes preparing a reflective layer on a substrate and forming a core of an area array waveguide layer and alignment features for an optical fiber input and a plurality of optical fiber outputs atop the reflective layer, wherein the core of the area array waveguide layer and the alignment features are formed concurrently. The method also includes applying a reflective layer to the top and side surfaces of the core of the area array waveguide layer and exposing an input and exposing a plurality of outputs in the reflective layer.

Electro-optical Assembly Fabrication

A flip-chip bonder fabricates an optical assembly by horizontally positioning a flexible portion of a substrate including a waveguide with the waveguide exposed at one end edge of the substrate; bending a portion of the flexible substrate to place the waveguide exposed end in approximately a vertical position; vertically positioning a bond head containing an optical component upon the waveguide exposed substrate edge to optically mate the optical component with the exposed waveguide; and fixably mounting the optical component to the substrate edge. 1. A method for fabricating an optical assembly comprising:horizontally positioning a flexible portion of a substrate including a waveguide, the waveguide exposed at one end edge of the substrate;bending the flexible portion of the substrate to place the waveguide exposed end in approximately a vertical position;vertically positioning a flip-chip bonder bond head containing an optical component upon the waveguide exposed substrate edge to optically mate the optical component with the exposed waveguide; andfixably mounting the optical component to the substrate edge.2. A method according to further including a step of unbending the portion of the flexible substrate with the mounted optical component thereon.3. A method for fabricating an optical assembly comprising:placing a flexible portion of a substrate including a waveguide upon a horizontally movable stage of a flip-chip bonder, the waveguide exposed at one end edge of the substrate wherein the stage includes an opening positioned underneath the substrate exposed end edge;vertically upwardly moving a clamp through the stage opening to bend the flexible portion of the substrate to place the waveguide exposed end in approximately a vertical position;vertically downwardly moving a bond head containing an optical component upon the waveguide exposed substrate edge to position the optical component with the exposed waveguide;fixably mounting the optical component to the ...

Electro-optical Assembly Fabrication

A flip-chip bonder fabricates an optical assembly by horizontally positioning a flexible portion of a substrate including a waveguide with the waveguide exposed at one end edge of the substrate; bending a portion of the flexible substrate to place the waveguide exposed end in approximately a vertical position; vertically positioning a bond head containing an optical component upon the waveguide exposed substrate edge to optically mate the optical component with the exposed waveguide; and fixably mounting the optical component to the substrate edge.

Method for producing silicon waveguides on non-soi substrate

The present invention relates to a method for producing silicon waveguides on non-SOI substrate (non-silicon-on-insulator substrate), and particularly relates to a method for producing silicon waveguides on silicon substrate with a laser. This method includes the following steps: (1) forming a ridge structure with high aspect ratio on a non-SOI substrate; (2) melting and reshaping the ridge structure by laser illumination for forming a structure having broad upper part and narrow lower part; and (3) oxidizing the structure having broad upper part and narrow lower part to form a silicon waveguide.

Optical wavelength dispersion device and method of manufacturing the same

An optical wavelength dispersion device includes a first substrate, an input unit formed on the first substrate having a slit for receiving an optical signal, a grating formed on the first substrate for producing a first light beam form the optical signal for outputting, and a second substrate covered on the top of the input unit and the grating, wherein the input unit and the grating are formed from a photo-resist layer by high energy light source exposure.

Optical Module Manufacturing Method and Optical Module

An optical module manufacturing method includes: forming a first waveguide layer and a second waveguide layer on a first substrate and a second substrate respectively, or forming a first waveguide layer and a second waveguide layer on a first surface of a first substrate and a second surface of the first substrate respectively; disposing the first substrate on the second substrate; disposing a filter at an end of the first waveguide layer and the second waveguide layer, so that the filter is aligned with the second waveguide layer; and disposing a prism on the filter, so that a first reflective surface of the prism is aligned with the first waveguide layer, and a second reflective surface is aligned with the second waveguide layer. Embodiments of the present application further disclose an optical module. 1. An optical module manufacturing method comprising:forming a first waveguide layer and a second waveguide layer on a first substrate and a second substrate respectively, or forming a first waveguide layer and a second waveguide layer on a first surface of a first substrate and a second surface of the first substrate respectively, wherein the first waveguide layer and the second waveguide layer each comprises at least one optical channel, wherein the first waveguide layer is located above the second waveguide layer, and wherein the first waveguide layer is parallel to the second waveguide layer;disposing the first substrate on the second substrate such that the first substrate is parallel to the second substrate, and the first waveguide layer is parallel to the second substrate;disposing a filter at an end of the first waveguide layer and the second waveguide layer such that the filter is aligned with the second waveguide layer; anddisposing a prism on the filter, so that a first reflective surface of the prism is aligned with the first waveguide layer, and a second reflective surface is aligned with the second waveguide layer,wherein a positional relationship ...

Mold for fabricating light guiding plate

A mold for fabricating a light guiding plate includes an upper mold, a lower mold and a die core assembly. The upper mold defines a first cooling channel therein. The lower mold defines a cavity thereon. The die core assembly is mounted on the upper mold, and includes a base plate connected to the upper mold and a core plate detachably located at a side of the base plate facing the lower mold. The base plate defines a second cooling channel. The second cooling channel communicates with the first cooling channel respectively to cooling the mold.

OPTICAL TRANSMISSION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME, AND OPTICAL TRANSMISSION MODULE

Provided are an optical transmission structure having a high degree of flexibility in the design of an optical waveguide and a method for manufacturing the optical transmission structure, and also an optical transmission module. An optical transmission structure includes a main substrate (), a cladding member (), and core members (). The main substrate () has a through hole () penetrating therethrough in a thickness direction thereof. The cladding member () is disposed inside the through hole () and has a plurality of optical waveguide holes () penetrating therethrough in a thickness direction thereof. The core members () are disposed inside the plurality of optical waveguide holes (), respectively, and have a refractive index larger than the cladding member (). 1. An optical transmission structure , comprising:a substrate comprising a through hole penetrating therethrough in a thickness direction thereof;a cladding member which is disposed inside the through hole and comprises a plurality of optical waveguide holes penetrating therethrough in a thickness direction thereof; anda plurality of core members disposed inside the plurality of optical waveguide holes, respectively.2. The optical transmission structure according to claim 1 , whereinthe substrate is formed of a plurality of secondary substrates stacked on top of each other, the plurality of secondary substrates comprising a plurality of secondary through holes penetrating therethrough in the thickness direction, respectively, andthe through hole is formed of the plurality of secondary through holes being continuous with each other.3. The optical transmission structure according to claim 1 , wherein the cladding member comprises a photosensitive material.4. The optical transmission structure according to claim 1 , wherein the substrate comprises one main surface claim 1 , the one main surface being a flat surface.5. The optical transmission structure according to claim 1 , wherein the optical waveguide hole ...

INTEGRATED CIRCUIT COUPLING SYSTEM WITH WAVEGUIDE CIRCUITRY AND METHOD OF MANUFACTURE THEREOF

A method of manufacture of an integrated circuit coupling system includes: forming a waveguide assembly, having a top clad over an open end of an optical core; forming a first photoresist having a base photoresist pattern shape with sloped photoresist sidewalls tapered down to expose a portion of the top clad; forming a recess having clad sidewalls from the portion of the top clad exposed by the base photoresist pattern shape, the clad sidewalls having a shape replicating a shape of the base photo resist pattern shape; and forming an optical vertical insertion area, from the clad sidewalls forming the recess, having a pocket trench, a horizontal step, and a mirror with a reflective material selectively applied to a section of the clad sidewalls and exposing the open end opposite to the mirror, the horizontal step between the mirror and the pocket trench. 1. A method of manufacture of an integrated circuit coupling system comprising:forming a waveguide assembly, having a top clad over an open end of an optical core;forming a first photoresist having a base photoresist pattern shape with sloped photoresist sidewalls tapered down to expose a portion of the top clad;forming a recess having clad sidewalls from the portion of the top clad exposed by the base photoresist pattern shape, the clad sidewalls having a shape replicating a shape of the base photoresist pattern shape; andforming an optical vertical insertion area, from the clad sidewalls forming the recess, having a pocket trench, a horizontal step, and a mirror with a reflective material selectively applied to a section of the clad sidewalls and exposing the open end opposite to the mirror, the horizontal step between the mirror and the pocket trench.2. The method as claimed in wherein forming the first photoresist includes baking the first photoresist to form the sloped photoresist sidewalls.3. The method as claimed in further comprising etching the horizontal step between the pocket trench and the mirror.4. The ...

Optical waveguide and electronic device

An optical waveguide including a first cladding layer; a core layer, including first and second core sections with cladding sections on sides thereof in the in-layer direction; and a second cladding layer. A refractive index distribution in the in-layer direction in the core layer, from the first core section to an adjacent cladding section, has a continuous change and a region with a first peak, a first dip, and a second peak in this order; the first peak at a position of the first core section, the second peak with a maximum value of refractive index smaller than of the first peak, at a position of the cladding section, and a portion, from the first cladding layer to the first core section, corresponded to a refractive index distribution in the layer-stacking direction, discontinuously changing at the boundary between the first cladding layer and first core section.

Spot size converter, optical transmitter, optical receiver, optical transceiver, and method of manufacturing spot size converter

The spot size converter includes a first cladding layer, a first core layer and a second core layer arranged side by side on the first cladding layer so as to extend from a first end which receives/outputs light along a direction from the first end toward a second end, a third core layer which is disposed on the first cladding layer between the first and second core layers, is a member different from the first and second core layers, and extends to the second end along the direction from the first end toward the second end, and a second cladding layer disposed on the first, second, and third core layers.

Optical component having reduced dependency on etch depth

An optical device includes an active component on a base. The active component is a light sensor and/or a light modulator. The active component is configured to guide a light signal through a ridge of an active medium extending upwards from slab regions of the active medium. The slab regions are on opposing sides of the ridge. The active medium includes a doped region that extends into a lateral side of the ridge and also into one of the slab regions. The depth that the doped region extends into the slab region is further than the depth that the doped region extends into the ridge.

OPTICAL WAVEGUIDE FABRICATION

An optical device including an active core layer of silica glass doped with ions which serve as optical emitters, the active core layer being on a silica glass substrate and having a layer thickness of at least 5 μm, and wherein the layer is sintered at a temperature range of 1500-1600 C and subsequently heat treated by a laser. 17.-. (canceled)9. A method for producing a silica waveguide comprising:a. depositing a silica deposition comprising a layer of doped silica nanoparticles on a fused silica (FS) substrate;b. sintering said silica deposition, said layer of doped silica after sintering having a thickness between 5 and 50 μm;c. performing a post sintering laser treatment, comprising heating said silica layer with a laser beam and choosing laser heating conditions to eliminate crystallites and voids and reduce surface roughness of said surface, said laser beam having a wavelength above 3 μm that is absorbed by said silica layer; andd. deep reactive ion etching (DRIE), to obtain a rectangular section structure or group of such structures to define an active core of an optical waveguide, and doping said layer with rare-earth ions which serve as optical emitters.10. The method according to claim 9 , wherein depositing said silica layer is done such that said silica layer does not contain soot grains greater than 100 μm.11. The method according to claim 9 , wherein heating said silica layer with said laser beam comprises heating to a temperature higher than 1713° C. and lower than 2700° C.12. The method according to claim 9 , further comprising imposing an optical index step between said active core and surrounding medium.13. The method according to claim 9 , further comprising controlling waveguide mode size and structure size by coating said silica layer with an additional layer of controlled index of refraction.14. The method according to claim 9 , further comprising adding an additional layer of fused silica glass to form a waveguide cladding.15. The method ...

Laser to Chip Coupler

A method and an apparatus for butt-coupling an input beam incoming from a photonic device of a second optical element to a primary photonic chip at an input interface of the primary photonic chip is disclosed. The primary photonic chip comprises a coupling apparatus. The light from the input beam is butt-coupled to the coupling apparatus. The coupling apparatus comprises a plurality of more than one single mode optical paths on the primary photonic chip. The single mode optical paths are strongly coupled to each other at the input interface of the primary photonic chip. Regions of strongly coupled single mode optical paths can correspond to one or both of distinct but highly coupled waveguides or waveguides fully merged into a multi-mode section. 1. A method comprising the steps of:butt-coupling to a primary photonic chip defining a first optical element an input beam incoming from a photonic device of a second optical element at an input interface of the primary photonic chip, whereinthe primary photonic chip comprises a coupling apparatus, having a plurality of single mode optical pathsthe single mode optical paths are strongly coupled to each other at the input interface of the primary photonic chip, such that regions of said strongly coupled single mode optical pathscorrespond to one or both of (i) distinct but highly coupled waveguides and (ii) waveguides fully merged into a multi-mode section, andthe butt-coupling step comprises butt-coupling light from the input beam to the coupling apparatus.2. The method of claim 1 , further comprising positioning a third optical element according to the amount of light coupled to each of the single mode optical paths from the input beam so as to directly or indirectly couple a subset of claim 1 , but not all of claim 1 , the single mode optical paths to the third optical element claim 1 , wherein the subset varies depending on the amount of light coupled to each of the single mode optical paths from the input beam when the ...

Photonic wire bonds

An optical arrangement includes a plurality of planar substrates with at least one planar integrated optical waveguide on each planar substrate. At least one optical waveguide structure has at least one end connected via an optical connecting structure to one of the planar integrated optical waveguides. The optical waveguide structure is positioned at least partly outside the integration plane for the planar integrated optical waveguide and a refractive index contrast between a core region and a cladding region of the optical waveguide structure is at least 0.01.

Optical Waveguide Arrangements Comprising An Auxiliary Waveguide - Like Structure

An optical waveguide arrangement is provided which comprises an active ridge waveguide structure formed by etching of a semiconductor substrate . There is also provided an auxiliary waveguide-like structure formed on the substrate adjacent the active ridge waveguide structure to control the etched profile of the active waveguide structure. The arrangement of the auxiliary structure on the substrate controls the etched profile over the cross-section of the active waveguide structure and along the length of the active waveguide structure . Advantageously, this arrangement reduces or eliminates the disadvantages associated with etch-process induced asymmetries in the shape of closely spaced waveguides. 1. An optical waveguide arrangement comprising:an active ridge waveguide structure formed by etching of a substrate, andan auxiliary waveguide-like structure formed on the substrate adjacent to the active waveguide structure to control the etched profile over the cross-section of the active waveguide structure.2. The optical waveguide arrangement of claim 1 , wherein the auxiliary structure is arranged on the substrate to impart a symmetric active waveguide profile.3. The optical waveguide arrangement of claim 1 , wherein the active waveguide structure comprises one or more ridges and the auxiliary structure is arranged on the substrate so that each ridge in the active waveguide structure is symmetrical.4. The optical waveguide arrangement of claim 1 , wherein the active waveguide structure comprises two or more ridges and the auxiliary structure is arranged on the substrate so that each ridge in the active waveguide structure is substantially the same shape.5. The optical waveguide arrangement of claim 1 , wherein the active waveguide structure comprises an optical coupler having an input active waveguide and/or an output active waveguide claim 1 , the auxiliary structure being arranged adjacent at least one of the input and output active waveguides.6. The optical ...

Opto-electric hybrid board and method of manufacturing same

An opto-electric hybrid board which is capable of suppressing the increase in light propagation losses and which is excellent in flexibility, and a method of manufacturing the same are provided. The opto-electric hybrid board includes an electric circuit board, an optical waveguide, and a metal layer. The electric circuit board includes an insulative layer having front and back surfaces, and electrical interconnect lines formed on the front surface of the insulative layer. The optical waveguide is formed on the back surface of the insulative layer of the electric circuit board. The metal layer is formed between the optical waveguide and the back surface of the insulative layer of the electric circuit board. The metal layer is patterned to have a plurality of strips. Cores of the optical waveguide are disposed in a position corresponding to a site where the metal layer is removed by the patterning.

OPTO-ELECTRIC HYBRID BOARD AND METHOD OF MANUFACTURING SAME

An opto-electric hybrid board includes an electric circuit board, an optical waveguide, and a metal layer. The electric circuit board includes an insulative layer having front and back surfaces, and electrical interconnect lines formed on the front surface of the insulative layer. The optical waveguide includes a first cladding layer and cores, and the optical waveguide is formed on the back surface of the insulative layer of the electric circuit board. The metal layer is formed between the first cladding layer of the optical waveguide and the back surface of the insulative layer of the electric circuit board. Part of the opto-electric hybrid board is formed as a to-be-bent portion. The metal layer is partially removed in a portion corresponding to the to-be-bent portion. A first cladding layer of the optical waveguide fills a site where the metal layer is removed. 1. An opto-electric hybrid board , comprising:an electric circuit board including an insulative layer having front and back surfaces, and electrical interconnect lines formed on the front surface of the insulative layer;an optical waveguide including a cladding layer and cores, the optical waveguide being formed on the back surface of the insulative layer of the electric circuit board; anda metal layer formed between the cladding layer of the optical waveguide and the back surface of the insulative layer of the electric circuit board,wherein part of the opto-electric hybrid board is formed as a to-be-bent portion,wherein the metal layer is partially removed in a position corresponding to the to-be-bent portion, andwherein the cladding layer of the optical waveguide fills a site where the metal layer is removed.2. The opto-electric hybrid board according to claim 1 ,wherein the metal layer is patterned in a position corresponding to the pattern of the cores of the optical waveguide in portions other than the to-be-bent portion, andwherein the cladding layer of the optical waveguide fills a site where the ...

Communication Methods, Methods of Forming an Interconnect, Signal Interconnects, Integrated Circuit Structures, Circuits, and Data Apparatuses

Some embodiments include communication methods, methods of forming an interconnect, signal interconnects, integrated circuit structures, circuits, and data apparatuses. In one embodiment, a communication method includes accessing an optical signal comprising photons to communicate information, accessing an electrical signal comprising electrical data carriers to communicate information, and using a single interconnect, communicating the optical and electrical signals between a first spatial location and a second spatial location spaced from the first spatial location. 172-. (canceled)73. A method of forming a circuit comprising:forming a transmission medium between first and second spatial locations and which is substantially transparent to light and is electrically conductive;optically insulating the transmission medium;electrically insulating the transmission medium;optically coupling the transmission medium with first and second optical interfaces located at respective ones of the first and second spatial locations; andelectrically coupling the transmission medium with first and second electrical interfaces located at respective ones of the first and second spatial locations.74. The method according to wherein the transmission medium comprises a metal oxide structure.75. The method according to wherein the forming comprises forming the transmission medium to concurrently transmit photons and electrical data carriers.76. The method according to wherein the forming comprises forming the transmission medium to concurrently transmit plasmons and electrical data carriers.77. The method according to wherein the forming comprises forming the transmission medium to concurrently transmit plasmons and electrical data carriers.78. The method according to wherein the forming comprises forming the transmission medium between first and second spatial locations located within the periphery of an integrated circuit structure.79. The method according to wherein the first optical ...

EFFICIENT BACKSIDE-EMITTING/COLLECTING GRATING COUPLER

Photonic integrated circuit (PIC) chips with backside vertical optical coupler and packaging into an optical transmitter/receiver. A grating-based backside vertical optical coupler functions to couple light to/from a plane in the PIC chip defined by thin film layers through a bulk thickness of the PIC chip substrate to emit/collect via a backside surface of the PIC chip where it is to be coupled by an off-chip component, such as an optical fiber. Embodiments of a grating-based backside vertical optical coupler include a grating coupler with a grating formed in a topside surface of the thin film A reflector is disposed over the grating coupler to reflect light emitted from the grating coupler through the substrate to emit from the backside of the PIC chip or to reflect light collected from the backside of the PIC chip through the substrate and to the grating coupler. 1. An integrated optical transmitter , comprising:a package substrate;a photonic integrated circuit (PIC) chip flip-chip bonded to the package substrate with a optical waveguide and an optical grating-based vertical coupler disposed in thin film layers on a frontside of the PIC facing the package substrate; andan optical lens to couple light to the vertical coupler through a backside of the PIC chip.2. The optical transmitter of claim 1 , further comprising a second integrated circuit (IC) chip flip-chip bonded to the PIC chip and disposed between the PIC chip and the package substrate.3. The optical transmitter of claim 2 , wherein the PIC further comprises a laser coupled to the optical waveguide and wherein the second IC comprises a driver electrically coupled to the laser.4. The optical transmitter of claim 1 , wherein the vertical coupler further comprises:an optical grating coupler to receive light from the optical waveguide; anda reflector disposed between the optical grating coupler and the package substrate to reflect light emitted from the optical grating coupler toward the backside of the PIC ...

FABRICATION OF PLANAR LIGHT-WAVE CIRCUITS (PLCS) FOR OPTICAL I/O

PLC architectures and fabrication techniques for providing electrical and photonic integration of a photonic components with a semiconductor substrate. In the exemplary embodiment, the PLC is to accommodate optical input and/or output (I/O) as well as electrically couple to a microelectronic chip. One or more photonic chip or optical fiber terminal may be coupled to an optical I/O of the PLC. In embodiments the PLC includes a light modulator, photodetector and coupling regions supporting the optical I/O. Spin-on electro-optic polymer (EOP) may be utilized for the modulator while a photodefinable material is employed for a mode expander in the coupling region. 1. A method of forming a planar light-wave circuit , the method comprising:patterning a first layer disposed on a substrate to form waveguides in a first waveguide level;forming modulator electrodes in a first metal level disposed over the substrate;forming routing interconnect in at least a second metal level disposed over the first metal level;depositing an electro-optic material in a first recess disposed over a first waveguide in the first waveguide level and adjacent to the modulator electrodes;photodefining an optical mode expander in a material disposed over a second waveguide in the first waveguide level; andforming bump metallization disposed over, and coupled to, the routing interconnect.2. The method of claim 1 , wherein depositing the electro-optic material further comprises:spinning on an electro-optic polymer (EOP), and wherein the method further comprises:poling and curing the EOP; andetching back the EOP.3. The method of claim 2 , further comprising depositing a passivation layer over the EOP at a temperature below 200° C.4. The method of claim 3 , wherein the passivation layer comprises AlO.5. The method of claim 3 , the method further comprising patterning a second layer disposed over the first metal level to form a second waveguide in a second waveguide level after spinning on the EOP claim 3 ...

OPTO-ELECTRIC HYBRID BOARD AND METHOD OF MANUFACTURING SAME

An opto-electric hybrid board capable of suppressing the increase in light propagation losses and excellent in flexibility, and a method of manufacturing the same, are provided. The opto-electric hybrid board includes an electric circuit board, an optical waveguide, and a metal layer. The electric circuit board includes an insulative layer having front and back surfaces, and electrical interconnect lines formed on the front surface of the insulative layer. The optical waveguide is formed on the back surface of the insulative layer. The metal layer is formed between the cladding layer and the insulative layer. At least part of the metal layer is formed in one of first and second patterns. The first pattern includes a distribution of dot-shaped protrusions, and the second pattern includes a distribution of dot-shaped recesses. A first cladding layer fills a site where the metal layer is removed by the patterning. 1. An opto-electric hybrid board , comprising:an electric circuit board including an insulative layer having front and back surfaces, and electrical interconnect lines formed on the front surface of the insulative layer;an optical waveguide including a cladding layer, the optical wavequide being formed on the back surface of the insulative layer of the electric circuit board; anda metal layer formed between the cladding layer of the optical waveguide and the insulative layer of the electric circuit board,wherein at least part of the metal layer is formed in one of first and second patterns,wherein the first pattern includes a distribution of dot-shaped protrusions,wherein the second pattern includes a distribution of dot-shaped recesses, andwherein the cladding layer of the optical waveguide fills a site where the metal layer is removed by patterning.2. The opto-electric hybrid board according to claim 1 ,wherein part of the opto-electric hybrid board is formed as a to-be-bent portion;wherein parts if the metal layer corresponding to the to-be-bent portion ...

OPTICAL COMPONENTS HAVING A COMMON ETCH DEPTH

An optical device is described. This optical device includes multiple components, such as a ring resonator, an optical waveguide and a grating coupler, having a common etch depth (which is associated with a single etch step or operation during fabrication). Moreover, these components may be implemented in a semiconductor layer in a silicon-on-insulator technology. By using a common etch depth, the optical device may provide: compact active devices, multimode ultralow-loss optical waveguides, high-speed ring resonator modulators with ultralow power consumption, and compact low-loss interlayer couplers for multilayer-routed optical links. Furthermore, the single etch step may help reduce or eliminate optical transition loss, and thus may facilitate high yield and low manufacturing costs. 1. An optical device , comprising:a substrate;a buried-oxide layer disposed on the substrate; anda semiconductor layer disposed on the buried-oxide layer, wherein the semiconductor layer includes a ring resonator, an optical waveguide and a grating coupler, andwherein the ring resonator, the optical waveguide and the grating coupler are defined in the semiconductor layer using a common etch depth.2. The optical device of claim 1 , wherein the ring resonator has a radius less than 10 μm and is single mode.3. The optical device of claim 1 , wherein an optical loss of the optical waveguide at a wavelength and a data rate is less than 1 dB/cm.4. The optical device of claim 1 , wherein the semiconductor layer has a thickness and the etch depth is more than 50% of the thickness.5. The optical device of claim 4 , wherein the thickness is substantially 300 nm and the etch depth is greater than 200 nm.6. The optical device of claim 1 , wherein the substrate claim 1 , the buried-oxide layer and the semiconductor layer constitute a silicon-on-insulator technology.7. The optical device of claim 1 , wherein claim 1 , at bends claim 1 , the optical waveguide has a width between 400 and 500 nm.8. ...

Optical Transformer

A method of fabricating an optical transformer is provided. A substrate is provided first, wherein the substrate includes a first region and a second region. Then a first material layer is formed on the substrate, and the portion of the first material layer other than in the first region is removed. Then a second material layer is formed on the substrate, and the portion of the second material layer in the first region and the second region is removed. Lastly, a first conductive layer is formed on the substrate and the portion of the first conductive layer other than in the second region is removed to make the first material layer, the second material layer and the first conductive layer have the same height such that the first material layer becomes a part of the optical transformer. The present invention further provides a semiconductor structure. 1. A semiconductor structure , comprising:a substrate;a first conductive layer disposed on the substrate, wherein the first conductive layer is a part of a metal interconnection system; anda first material layer and a second material layer, both disposed on the substrate, wherein the first conductive layer, the first material layer and the second material layer are located in the same layer, and the first material layer, the second material layer and the first conductive layer have the same height.2. The semiconductor structure as in claim 1 , wherein the first material layer is a part of an optical transformer.3. The semiconductor structure as in claim 1 , wherein the refractive index of the first material layer is greater than that of the second material layer.4. The semiconductor structure as in claim 1 , wherein the first material layer and the second material layer comprise different dielectric materials.5. The semiconductor structure as in claim 1 , wherein the first material layer comprises silicon oxide.6. The semiconductor structure as in claim 1 , wherein the first material layer comprises silicon nitride.7. ...

METHOD OF MANUFACTURING A THREE DIMENSIONAL PHOTONIC DEVICE BY TWO PHOTON ABSORPTION POLYMERIZATION

A method of manufacturing a three dimensional photonic device by two photon absorption polymerization. The method includes several stages, including direct laser writing involving polymerization by two-photon absorption to manufacture a three dimensional photonic device integrating at least two distinct micro-optical components having two optical functions and being aligned with each other so that optical signal can be transmitted from one of said distinct components to the other. The distinct components are built at a same stage of the process flow to improve their relative alignment by direct laser writing involving polymerization by two-photon absorption. 1. Method of manufacturing a three dimensional photonic device according to a process flow that includes several manufacturing stages , the method comprising:fabricating at least two distinct micro-optical components by direct laser writing involving polymerization by two-photon absorption at a same manufacturing stage of said process flow, wherein:said at least two distinct micro-optical components are integrated within said three dimensional photonic device;said at least two distinct micro-optical components have respective optical functions; andsaid at least two distinct micro-optical components are aligned with each other, such that optical signal can be transmitted from one of said distinct components to another one of said distinct components.2. Method of manufacturing according to claim 1 , wherein at least one of said distinct components comprises a concave shape along the direction of the thickness of said three dimensional guided wave photonic device.3. Method of manufacturing according to claim 1 , wherein said manufacturing is performed by hybrid direct laser writing comprising:a first beam to perform said direct laser writing involving polymerization by two-photon absorption, to build three dimensional components; anda second beam, distinct from said first beam, to perform another direct laser ...

OPTICAL MODULE AND METHOD FOR FABRICATING OPTICAL MODULE

An optical module and a fabrication method thereof, the optical module includes a sub-substrate which includes a support layer, an active layer, a BOX layer interposed between the support layer and the active layer, and a height adjusting layer, an optical fiber, and an optical device which is fixed to a silicon substrate, wherein the sub-substrate includes a fixing groove formed by the active layer and the BOX layer, the optical fiber is fixed to the fixing groove, and the optical fiber is optically coupled to the optical device by positioning the sub-substrate via the height adjusting layer with respect to the silicon substrate. 1. An optical module comprising:a silicon substrate;a sub-substrate which includes a support layer, an active layer, a BOX layer interposed between said support layer and said active layer, and a height adjusting layer;an optical fiber; andan optical device which is fixed to said silicon substrate, whereinsaid sub-substrate includes a fixing groove formed by said active layer and said BOX layer,said optical fiber is fixed to said fixing groove, andsaid optical fiber is optically coupled to said optical device by positioning said sub-substrate via said height adjusting layer with respect to said silicon substrate.2. The optical module according to claim 1 , wherein said sub-substrate further includes a bonding Au layer formed on top of said height adjusting layer claim 1 , andsaid silicon substrate includes an Au micro-bump structure for bonding to said bonding Au layer.3. A method for fabricating an optical module having a substrate and a sub-substrate and an optical device both bonded to said substrate claim 1 , said method comprising the steps of:processing a base member having a support layer, an active layer, and a BOX layer interposed between said support layer and said active layer, and removing a portion of said active layer by etching, thereby fabricating said sub-substrate having a fixing groove formed by said active layer and ...

Resin composition for optical waveguide, dry film, optical waveguide, and photoelectric composite wiring board using same

Provided are a resin composition which offers both high transparency and a low linear expansion coefficient and can be used as a material for a dry film, and also a dry film obtained from this composition, an optical waveguide, and a photoelectric composite wiring board. The resin composition for an optical waveguide includes: (A) an epoxy resin constituted by a solid epoxy resin with one or less hydroxyl group in a molecule, and a liquid epoxy resin with one or less hydroxyl group in a molecule; (B) a curing agent with one or less hydroxyl group in a molecule; and (C) a nanosize silica sol, and contains no compound including two or more hydroxyl groups in a molecule as a resin component.

Method for Production of Optical Waveguides and Coupling and Devices Made from the Same

Novel processing methods for production of high-refractive index contrast and low loss optical waveguides are disclosed. In one embodiment, a “channel” waveguide is produced by first depositing a lower cladding material layer with a low refractive index on a base substrate, a refractory metal layer, and a top diffusion barrier layer. Then, a trench is formed with an open surface to the refractory metal layer. The open surface is subsequently oxidized to form an oxidized refractory metal region, and the top diffusion barrier layer and the non-oxidized refractory metal region are removed. Then, a low-refractive-index top cladding layer is deposited on this waveguide structure to encapsulate the oxidized refractory metal region. In another embodiment, a “ridge” waveguide is produced by using similar process steps with an added step of depositing a high-refractive-index material layer and an optional optically-transparent layer. 1. A method for producing a high-refractive index contrast and low loss optical waveguide , the method comprising the steps of:depositing a lower cladding material layer with a first low refractive index on a silicon base substrate;depositing or growing a refractory metal layer on top of the lower cladding material layer with the first low refractive index;forming a trench in a top diffusion barrier layer deposited on the refractory metal layer, wherein the trench has an open surface for the refractory metal layer;oxidizing the open surface of the trench to high-temperature ambient oxygen, wherein the open surface subsequently forms an oxidized refractory metal region, and wherein other parts of the refractory metal layer still covered under the top diffusion layer remain unchanged as a non-oxidized refractory metal region;removing the top diffusion barrier layer using one or more chemical etching agents;removing the non-oxidized refractory metal region by using a dry-etching tool with high-etch selectivity to preserve the oxidized refractory ...

METHOD FOR FABRICATING SILICON PHOTONIC WAVEGUIDES

A method for fabricating electronic and photonic devices on a semiconductor substrate using complementary-metal oxide semiconductor (CMOS) technology is disclosed. A substrate is initially patterned to form a first region for accommodating electronic devices and a second region for accommodating photonic devices. The substrate within the first region is thicker than the substrate within the second region. Next, an oxide layer is formed on the substrate. The oxide layer within the first region is thinner than the oxide layer within the second region. A donor wafer is subsequently placed on top of the oxide layer. The donor substrate includes a bulk silicon substrate, a sacrificial layer and a silicon layer. Finally, the bulk silicon substrate and the sacrificial layer are removed from the silicon layer such that the silicon layer remains on the oxide layer. 1. An integrated circuit comprising:a substrate having a first region for accommodating electronic devices and a second region for accommodating photonic devices, wherein said substrate within said first region is thicker than said substrate within said second region;an oxide layer on said substrate, wherein said oxide layer within said first region is thinner than said oxide layer within said second region; anda silicon layer on said oxide layer.2. The integrated circuit of claim 1 , wherein said substrate within said first region is epitaxially grown from said substrate.3. The integrated circuit of claim 1 , wherein an electronic device is fabricated on said first region and a photonic device is fabricated on said second region.4. The integrated circuit of claim 1 , wherein a photonic device is fabricated on said first region and an electronic device is fabricated on said second region.5. The integrated circuit of claim 1 , wherein one of said electronic devices is a transistor claim 1 , and one of said photonic devices is a waveguide claim 1 , a modulator or a demodulator.6. The integrated circuit of claim 1 , ...

HYBRID INTEGRATED OPTICAL DEVICE AND FABRICATION METHOD THEREOF

Disclosed are a hybrid integrated optical device capable of more easily implementing impedance matching of a transmission line by using a polymer material on which a low-temperature process may be performed when an optical waveguide platform is fabricated, and a fabrication method thereof. The hybrid integrated optical device according to an exemplary embodiment of the present disclosure includes: a substrate divided into a waveguide region and a line region; a lower clad layer formed of silica and formed on the substrate; a transmission line part formed on the lower clad layer of the line region; and a height adjustment layer, a core layer, and an upper clad layer formed of a polymer and sequentially formed on the lower clad layer of the waveguide region, in which an optical waveguide is formed on the core layer. 1. A hybrid integrated optical device , comprising:a substrate divided into a waveguide region and a line region;a lower clad layer formed of silica material and formed on the substrate;a transmission line part formed on the lower clad layer of the line region; anda height adjustment layer, a core layer, and an upper clad layer formed of a polymer and sequentially formed on the lower clad layer of the waveguide region,wherein an optical waveguide is formed on the core layer.2. The hybrid integrated optical device of claim 1 , wherein the transmission line part comprises an impedance matching resistor claim 1 , a transmission line including a signal line and a ground line claim 1 , a solder for mounting an active optical device claim 1 , and a flip chip alignment mark.3. The hybrid integrated optical device of claim 2 , wherein the transmission line is a coplanar waveguide (CPW) type or a microstip type.4. The hybrid integrated optical device of claim 1 , further comprising:an active optical device mounted on the transmission line part,wherein a core layer of the active optical device and the core layer of the waveguide region are positioned on the same ...

Lightwave Circuit and Method for Manufacturing Same

Provided are a lightwave circuit and a method of manufacturing the same. The lightwave circuit includes a first substrate having an engraved core formation groove which is formed on an upper portion of the first substrate, a core layer which is formed inside the engraved core formation groove, a BPSG bonding layer which is formed on the first substrate including the core layer, and a second substrate which is formed on the BPSG bonding layer. Accordingly, light loss and branching uniformity of the lightwave circuit are effectively improved, and the lightwave circuit is manufactured simply and inexpensively while also further improving light loss and branching uniformity of the lightwave circuit.

OPTICAL WAVEGUIDE DEVICE, MANUFACTURING METHOD THEREFOR, OPTICAL MODULATOR, POLARIZATION MODE DISPERSION COMPENSATOR, AND OPTICAL SWITCH

An optical waveguide device includes: a substrate which has an electro-optical effect; an optical waveguide which is formed on the substrate and/or inside the substrate; and an in-substrate electrode which is formed of a metal and provided inside the substrate. 1. A method comprising:forming a cavity within a substrate; andfilling the cavity with metal to form an in-substrate electrode.2. The method according to claim 1 , wherein 'condensing and radiating an ultrashort pulse laser onto a part where the in-substrate electrode is to be formed, and selective etching after the part is amorphized or performing ablation on the part.', 'the forming includes'} This application is a divisional of application Ser. No. 12/698,880, filed Feb. 2, 2010, which is based upon and claims the benefit of priority of the prior Japanese Patent Application No. 2009-022498, filed on Feb. 3, 2009, the entire contents of which are incorporated herein by reference.The embodiments discussed herein are related to an optical waveguide device, a manufacturing method therefor, an optical modulator, a polarization mode dispersion compensator, and an optical switch.In recent years, miniaturization and power saving of transmission apparatuses for optical communications have been pursued. At present, a coplanar electrode structure, for example, is used in an optical waveguide device as a transmission apparatus. The coplanar electrode structure may control a refractive index based on an electric field supplied to the optical waveguide. However, a driving voltage is generally increased in order to provide control of the refractive index.In addition to the coplanar electrode structure, a structure for concentrating lines of electric force on the optical waveguide by forming an electrode right under the optical waveguide has been proposed in Japanese Laid-Open Patent Publication No. 11-326853, for example.According to a technique described in Japanese Laid-Open Patent Publication No. 11-326853, to ...

OPTOELECTRONIC INTEGRATED PACKAGE MODULE AND METHOD OF MANUFACTURING THE SAME

According to one embodiment, there is provided an optoelectronic integrated package module including a silicon interposer, an optical semiconductor element formed in the silicon interposer, and a semiconductor integrated circuit chip module including a first semiconductor integrated circuit chip including a logic circuit and mounted on a first principal surface and a second semiconductor integrated circuit chip having a second principal surface side mounted on the silicon interposer. The first and second semiconductor integrated circuit chips are electrically connected to each other via the via interconnections formed inside the second semiconductor integrated circuit chip from the first principal surface. The first or second semiconductor integrated circuit chip receives an electrical signal obtained via the via interconnection by means of the unterminated reception circuit. 1. An optoelectronic integrated package module comprising:a silicon interposer formed on a silicon substrate, the interposer including an electrical interconnection and an optical waveguide;an optical semiconductor element formed in the silicon interposer, the optical semiconductor element being electrically connected to the electrical interconnection and optically coupled to the optical waveguide; anda semiconductor integrated circuit chip module including a first semiconductor integrated circuit chip including a logic circuit and a second semiconductor integrated circuit chip configured to drive the optical semiconductor element, the second semiconductor integrated circuit chip including a via interconnection formed inside from a first principal surface side with a second principal surface side opposite to the first principal surface side being mounted on the silicon interposer, and the first semiconductor integrated circuit chip being mounted on the first principal surface side of the second semiconductor integrated circuit chip,wherein the first semiconductor integrated circuit chip and the ...

IMAGING DEVICE, IMAGING SYSTEM, AND METHOD FOR MANUFACTURING IMAGING DEVICE

An exemplary embodiment according to the present invention is an imaging device including a substrate in which a plurality of light receiving portions is arranged, an insulator configured to be arranged on the substrate, a plurality of first members configured to be arranged on the substrate so that each of projections of the plurality of first members on the substrate overlaps at least in part with any of the plurality of light receiving portions, and each of the plurality of first members sides is surrounded by the insulator, a second member configured to be arranged on the insulator and the plurality of first members, and a light shielding portion configured to be arranged in the second member. 1. An imaging device comprising:a substrate in which a plurality of light receiving portions is arranged;an insulator arranged on the substrate;a plurality of first members arranged on the substrate so that a projection of each of the plurality of first members onto the substrate at least partially overlaps with any of the plurality of light receiving portions, each of the plurality of first members being surrounded by the insulator;a second member arranged on the insulator and the plurality of first members; anda light shielding portion arranged in the second member.2. The imaging device according to claim 1 , wherein a refractive index of the second member is lower than that of the first members.3. The imaging device according to claim 2 , further comprising:a third member arranged between the second member and the insulator and between the second member and the plurality of first members, a refractive index of the third member being higher than both that of the second member and that of the insulator; anda fourth member arranged on the second member and having a refractive index different from the refractive index of the second member,wherein the plurality of first members have a refractive index higher than that of the insulator, andwherein the second member and the ...

OPTICAL INTERCONNECTION DEVICE AND METHOD OF MANUFACTURING THE SAME

An optical interconnection device includes a light-emitting element, a light-receiving element, and an optical waveguide. Both the light-emitting element and the light-receiving element have a layered structure and are formed on a silicon substrate. At least a portion of the light-emitting element is embedded in an insulator. At least a portion of the light-receiving element is embedded in the insulator. The optical waveguide is formed over the insulator, and is optically coupled to the light-emitting element and the light-receiving element by distributed coupling. 1. An optical interconnection device , comprising:a light-emitting element and a light-receiving element, both the light-emitting element and the light-receiving element having a same layered structure and being formed on a silicon substrate, at least a portion of the light-emitting element being embedded in an insulator, at least a portion of the light-receiving element being embedded in the insulator; andan optical waveguide being formed over the insulator, the optical waveguide being optically coupled to the light-emitting element and the light-receiving element by distributed coupling.2. The device according to claim 1 , wherein a layer is formed between the silicon substrate and both the light-emitting and light receiving elements claim 1 , the layer including at least one selected from the group consisting of metal claim 1 , amorphous silicon claim 1 , and polycrystalline silicon.3. The device according to claim 2 , wherein the light-emitting and light receiving elements include compound semiconductors.4. The device according to claim 2 , wherein the optical waveguide include amorphous silicon claim 2 , polycrystalline silicon claim 2 , or crystalline silicon.5. The device according to claim 1 , wherein an electronic circuit for driving the light-emitting and light receiving elements is formed in the silicon substrate.6. The device according to claim 4 , wherein at least a portion of the waveguide ...

Radiation Scribed Waveguide Coupling for Photonic Circuits

Optical waveguide coupling ratios can be modified for a package by providing a substrate with a photonic circuit disposed on a first section of the substrate and a plurality of optical waveguides formed in glass disposed on a second section of the substrate, the waveguides being connected to the photonic circuit, adjacent ones of the waveguides having a fixed coupling ratio. A three-dimensional region of the glass abutting an end of one or more of the waveguides is lased to change a refractive index of the glass in each three-dimensional region, and thereby extend a length of each waveguide abutting one of the three-dimensional regions so that the coupling ratio between that waveguide and an adjacent waveguide is changed as a function of the extended length. The lasing is controlled based on feedback so that each coupling ratio changed by the lasing varies by less than a target amount. 1. A method of modifying optical waveguide coupling ratios , the method comprising:providing a substrate with a photonic circuit disposed on a first section of the substrate and a plurality of optical waveguides formed in glass disposed on a second section of the substrate, the waveguides being connected to the photonic circuit, adjacent ones of the waveguides having a fixed coupling ratio;lasing a three-dimensional region of the glass abutting an end of one or more of the waveguides to change a refractive index of the glass in each three-dimensional region and thereby extend a length of each waveguide abutting one of the three-dimensional regions so that the coupling ratio between that waveguide and an adjacent waveguide is changed as a function of the extended length; andcontrolling the lasing based on feedback so that each coupling ratio changed by the lasing varies by less than a target amount.2. The method according to claim 1 , wherein the waveguides are disposed spaced apart in a same plane in the glass claim 1 , and wherein each lased three-dimensional region extends outward ...

INTERFEROMETER FILTERS WITH COMPENSATION STRUCTURE

A Mach-Zehnder interferometer (MZI) filter comprising one or more passive compensation structures are described. The passive compensation structures yield MZI filters that are intrinsically tolerant to perturbations in waveguide dimensions and/or other ambient conditions. The use of n+1 waveguide widths can mitigate n different sources of perturbation to the filter. The use of at least three different waveguide widths for each Mach-Zehnder waveguide can alleviate sensitivity of filter performance to random width or temperature variations. A tolerance compensation portion is positioned between a first coupler section and a second coupler section, wherein the tolerance compensation portion includes a first compensation section having a second width, a second compensation section having a third width and a third compensation section having a fourth width, wherein the fourth width is greater than the third width and the third width is greater than the second width. 1. (canceled)2. An optical filter comprising:a first waveguide including a first region extending between a first coupler section and a second coupler section, and a second region extending between the second coupler section and a third coupler section; anda second waveguide including:a first portion extending between the first coupler section and the second coupler section, the first portion including at least two compensation sections that sequentially increase in width; anda second portion extending between the second coupler section and the third coupler section, the second portion including at least two compensation sections that sequentially increase in width.3. The optical filter of wherein the first claim 2 , second and third coupler sections and the first and second waveguides comprise a Mach-Zehnder interferometer (MZI) filter.4. The optical filter of wherein the first portion includes at least three compensation sections that sequentially increase in width.5. The optical filter of wherein the ...

Optical and thermal interface for photonic integrated circuits

Described herein are photonic systems and devices including a optical interface unit disposed on a bottom side of a photonic integrated circuit (PIC) to receive light from an emitter of the PIC. A top side of the PIC includes a flip-chip interface for electrically coupling the PIC to an organic substrate via the top side. An alignment feature corresponding to the emitter is formed with the emitter to be offset by a predetermined distance value; because the emitter and the alignment feature are formed using a shared processing operation, the offset (i.e., predetermined distance value) may be precise and consistent across similarly produced PICs. The PIC comprises a processing feature to image the alignment feature from the bottom side (e.g., a hole). A heat spreader layer surrounds the optical interface unit and is disposed on the bottom side of the PIC to spread heat from the PIC.

PHOTONIC DEVICE HAVING A PHOTONIC CRYSTAL LOWER CLADDING LAYER PROVIDED ON A SEMICONDUCTOR SUBSTRATE

An integrated photonic device is provided with a photonic crystal lower cladding on a semiconductor substrate. 1. An integrated structure comprising:a semiconductor substrate;optical cladding formed in the substrate, the cladding comprising a plurality of spaced material areas formed in the substrate; anda waveguide comprising a core, the core being formed over the optical cladding.2. The integrated structure as in claim 1 , wherein the material areas comprise oxide areas.3. The integrated structure as in claim 2 , wherein the oxide material areas comprise silicon dioxide areas.4. The integrated structure as in claim 1 , wherein the core comprises a semiconductor material.5. The integrated structure as in claim 1 , wherein the material areas cause the optical cladding to have an average index of refraction which is lower than the index of refraction of the core.6. The integrated structure as in claim 4 , wherein the waveguide further comprises additional cladding on the sides and upper surface of the core.7. The integrated structure as in claim 6 , wherein the additional cladding comprises an oxide material.8. The integrated structure as in claim 7 , wherein the oxide material comprises silicon dioxide.9. The integrated structure as in claim 6 , wherein the additional cladding comprises BPSG or PSG.10. The integrated structure as in claim 1 , wherein the substrate comprises a bare silicon claim 1 , the dielectric material comprises an oxide claim 1 , and the waveguide core comprises crystalline silicon.11. The integrated structure as in claim 10 , wherein the core comprises epitaxial crystalline silicon.12. The integrated structure as in claim 1 , wherein the substrate comprises bare silicon claim 1 , and the waveguide core comprises epitaxial crystalline silicon formed on the optical cladding.13. The integrated structure as in claim 1 , wherein the optical cladding comprises a photonic crystal.14. The integrated structure as in claim 13 , wherein the photonic ...

PLANAR COAXIAL ELECTRICALLY AND OPTICALLY CONDUCTIVE STRUCTURE

A method for fabricating a coaxial structure having an electrical conductor surrounded by an optically conductive dielectric is disclosed. The method may include creating an optical trench in an electrical conductor and depositing an optical material into the optical trench to cover an inner surface of the trench. The method may also include removing a portion of the deposited optical material from the optical trench to form an embedded trench in the deposited optical material, and building up electrically conductive material from within the embedded trench to create an inner electrical conductor. The method may also include depositing optical material around an exposed portion of the inner electrical conductor to create an optical channel encapsulating the inner electrical conductor, and depositing electrically conductive material over a top surface of the optical channel and over a top surface of the first electrical conductor to create the coaxial structure. 1. A method for fabricating a coaxial structure having an inner electrical conductor surrounded by an optically conductive dielectric , comprising:creating an optical trench in a first electrical conductor;making a first deposit of an optical material into the optical trench to cover an inner surface of the trench;removing a portion of the first deposit of the optical material from the optical trench to form an embedded trench in the first deposit of the optical material;building up electrically conductive material from within the embedded trench to create the inner electrical conductor;making a second deposit of the optical material around an exposed portion of the inner electrical conductor to create an optical channel encapsulating the inner electrical conductor; anddepositing electrically conductive material over a top surface of the optical channel and over a top surface of the first electrical conductor to create the coaxial structure.2. The method of claim 1 , wherein the coaxial structure has a cross- ...

Method and Structure for Reducing Light Crosstalk in Integrated Circuit Device

The present disclosure provides an integrated circuit device comprising a substrate having a back surface and a sensing region disposed in the substrate and being operable to sense radiation projected towards the back surface of the substrate. The device further includes a waveguide disposed over the back surface of the substrate. The waveguide is aligned with the sensing region such that the waveguide is operable to transmit the radiation towards the aligned sensing region. The waveguide includes a waveguide wall, and an inner region disposed adjacent to the waveguide wall. A diffractive index of the waveguide wall is less than a diffractive index of the inner region. 1. An integrated circuit device comprising:a substrate having a back surface;a sensing region disposed in the substrate and operable to sense radiation projected towards the back surface of the substrate; anda waveguide disposed over the back surface of the substrate, the waveguide being aligned with the sensing region such that the waveguide is operable to transmit the radiation towards the aligned sensing region,wherein the waveguide includes a waveguide wall, and an inner region disposed adjacent to the waveguide wall, andwherein a diffractive index of the waveguide wall is less than a diffractive index of the inner region.2. The integrated circuit device of claim 1 , further comprising:a color filter aligned with and disposed over the waveguide.3. The integrated circuit device of claim 2 , wherein a width of the inner region is greater than a width of the aligned color filter.4. The integrated circuit device of claim 1 , wherein a width of the inner region is greater than a width of the aligned sensing region.5. The integrated circuit device of claim 1 , wherein the waveguide wall has multiple layers.6. The integrated circuit device of claim 1 , wherein the inner region of the waveguide has multiple layers.7. The integrated circuit device of claim 1 , further comprising:an antireflective layer ...

OPTICAL PRINTED CIRCUIT BOARD AND METHOD OF MANUFACTURING THE SAME

Provided is an optical printed circuit board, including: a first insulating layer on which at least one receiving groove with an inclined angle on at least one end is formed; an optical waveguide which is formed in the receiving groove of the first insulating layer; and a second insulating layer which is formed on the first insulating layer and buries the optical waveguide formed in the receiving groove. 1. An optical printed circuit board , comprising:a first insulating layer on which at least one receiving groove with an inclined angle on at least one end is formed;an optical waveguide which is formed in the receiving groove of the first insulating layer; anda second insulating layer which is formed on the first insulating layer and buries the optical waveguide formed in the receiving groove.2. The optical printed circuit board of claim 1 , wherein the optical waveguide is configured such that a lower clad claim 1 , a core and an upper clad are sequentially laminated.3. The optical printed circuit board of claim 1 , wherein the optical waveguide is formed so that a part thereof is protruded to an upper part of the receiving groove.4. The optical printed circuit board of claim 1 , wherein the receiving groove comprises: a lower surface; and a left side surface and a right side surface which have a constant inclined angle from both ends of the lower surface and is formed to extend to an upper side claim 1 , and the constant inclined angle is any one of 45° and 135°.5. The optical printed circuit board of claim 4 , further comprising a first mirror and a second mirror which are formed on the left side surface and the right side surface of the receiving groove.6. The optical printed circuit board of claim 5 , wherein a circuit pattern is formed on at least one surface of the first insulating layer claim 5 , an optical transmitter is electrically connected to the circuit pattern formed at an upper part of the first mirror claim 5 , and an optical receiver is ...

PHOTOCURABLE COATING COMPOSITION AND APPLICATION THEREOF

The present disclosure provides a photocurable coating composition, including: (a) a (meth)acrylate monomer or oligomer with at least four functional groups; (b) a difunctional (meth)acrylate monomer, (c) a monofunctional (meth)acrylate monomer, and (d) an initiator. The difunctional (meth)acrylate monomer is present in an amount of 30 to 70 wt % based on the total weight of the photocurable coating composition. The present disclosure also provides an optical film having a microstructure layer made from the photocurable coating composition. The optical film can be as a light guide film in a back light module of a display. 4. The photocurable coating composition according to claim 1 , wherein the composition has a viscosity of 100 to 2000 cps at 25° C.5. The photocurable coating composition according to claim 1 , wherein the (meth)acrylate monomer or oligomer with at least four functional groups is present in an amount of 5 wt % to 25 wt % based on the total weight of the photocurable coating composition.6. The photocurable coating composition according to claim 1 , wherein the (meth)acrylate monomer with at least four functional groups comprises pentaerythritol tetraacrylate claim 1 , ethoxylated pentaerythritol tetraacrylate claim 1 , propoxylated pentaerythritol tetraacrylate claim 1 , dipentaerythritol hexaacrylate or caprolactone modified dipentaerythritol hexaacrylate.7. The photocurable coating composition according to claim 1 , wherein the (meth)acrylate oligomer with at least four functional groups comprises a hyperbranched polyurethane (meth)acrylate or a hyperbranched polyester (meth)acrylate.8. The photocurable coating composition according to claim 1 , wherein the (meth)acrylate oligomer with at least four functional groups has not more than twenty functional groups and has a number average molecular weight between 2000 and 5000.9. The photocurable coating composition according to claim 1 , wherein the monofunctional (meth)acrylate monomer is present in ...

PASSIVE PLACEMENT OF A LASER ON A PHOTONIC CHIP

Embodiments disclosed herein generally relate to a method for manufacturing a photonic device that facilitates precise alignment of a laser with a waveguide. The method generally includes disposing the laser on a support member on a substrate such that the laser contacts the support member. The support member may extend in a direction perpendicular to a base plane of the substrate, and solder may be disposed on the base plane such that a height of the solder in the direction perpendicular to the base plane is less than a height of the support member so that a gap is created between the solder and the laser. Once the laser has been properly aligned with the waveguide, the solder may be heated (e.g., reflowed) so that the solder contacts the laser. 1. A method , comprising:disposing a bottom surface of a laser on a support member, wherein the support member is formed on a substrate and extends in a direction perpendicular to a base plane of the substrate, wherein the bottom surface of the laser is in a facing relationship with the base plane, and wherein solder is disposed on the base plane such that a height of the solder in the direction perpendicular to the base plane is less than a height of the support member so that a gap is created between the solder and the laser;aligning the laser with an optical waveguide; andheating the solder, after the alignment of the laser with the optical waveguide, so that the solder contacts the laser.2. The method of claim 1 , further comprising disposing an electrode between the substrate and the solder claim 1 , wherein the solder is disposed on the electrode.3. The method of claim 2 , further comprising connecting a trace from a circuit in the substrate to the electrode to provide power to the laser via the solder.4. The method of claim 1 , further comprising applying pressure on the laser towards the support member when heating the solder.5. The method of claim 1 , wherein the substrate is part of a photonic chip claim 1 , the ...

DIRECT WRITABLE AND ERASABLE WAVEGUIDES IN OPTOELECTRONIC SYSTEMS

Technologies are generally described to form a waveguide in a polymer multilayer comprising a first and second polymer layer. The waveguide may be formed by directing light beams toward the polymer multilayer to form first and second cladding regions in the polymer multilayer, where the first and second cladding regions comprise a mixture of the first and second polymer layers. The first and second cladding regions may define a third cladding region and a waveguide core therebetween, where the third cladding region comprises a portion of the second polymer layer, and the waveguide core comprises a portion of the first polymer layer. In some examples, the polymer multilayer may be formed on a substrate such that the waveguide is formed on the substrate. Additionally, the waveguide may be formed temporarily to test components of an optoelectronic system and then erased by heating the polymer multilayer to destroy the waveguide core, or the waveguide may be formed as a default optical interconnection configuration that may be changed to alter the functional mode of the backplane in the manner of a jumper setting. 1. A method to form a waveguide , the method comprising:providing a polymer multilayer, the polymer multilayer comprising a first polymer layer and a second polymer layer,the first polymer layer having a first refractive index,the second polymer layer having a second refractive index, the second refractive index being lower than the first refractive index;writing a first cladding region by directing a first light beam onto the polymer multilayer to induce mixing of the first and second polymer layers within the first cladding region; andwriting a second cladding region by directing a second light beam on the polymer multilayer to induce mixing of the first and second polymer layers within the second cladding region,such that the waveguide is formed, the waveguide having a waveguide core comprising a portion of the first polymer layer located between the first ...

METHOD FOR POLISHING PHOTONIC CHIPS

A method for polishing photonic chips is described. A gauge is placed in a photonic chip adjacent to an edge to be polished. The gauge includes a set of bars of various lengths. The bar lengths can be progressively ordered from shortest to longest or vice versa. The photonic chip is then secured in a chip polishing jig to get ready for polishing. When the photonic chip is being polished, an operator can visually inspect the gauge by looking at the polishing edge to estimate a polishing depth in order to determine a stopping point for polishing. Once the stopping point has been reached, the polishing of the photonic chip can be stopped. 1. A method for polishing a photonic chip edge , said method comprising:placing a gauge underneath a surface of a photonic chip, wherein said gauge is located adjacent to an edge to be polished, wherein said gauge includes a plurality of bars of various lengths;securing said photonic chip in a chip polishing jig;when said photonic chip is being polished, determining a stopping point by visually inspecting said bars of said gauge to estimate a polishing depth at which polishing should stop; andstopping polishing said photonic chip after said stopping point has been reached.2. The method of claim 1 , wherein said determining further includes basing on the number of bars on said gauge uncovered by said polishing.3. The method of claim 1 , wherein said determining further includes basing on the number of bars on said gauge removed by said polishing.4. The method of claim 1 , wherein said bars are located at different distance from said edge.5. The method of claim 1 , wherein said bars are located at equal distance from said edge.6. The method of claim 1 , wherein said gauge is located at the same level as a waveguide.7. The method of claim 1 , wherein said gauge is made of the same material as a waveguide.8. The method of claim 1 , wherein said gauge is made of silicon.9. The method of claim 1 , wherein said visually inspecting further ...

Optical Waveguide Element and Method for Manufacturing Optical Waveguide Element

A method according to an aspect of the present invention, is a method for manufacturing an optical waveguide element, including: an optical waveguide forming step of forming an optical waveguide extending in a first direction in a substrate by doping the substrate with an impurity for reducing a coercive electric field of the substrate, a ridge forming step of forming a first ridge part including the optical waveguide and a second ridge part intersecting the first ridge part, and a poling step of reversing a polarization direction of a region of the substrate divided by the second ridge part by applying voltage to the region. 1. A method for manufacturing an optical waveguide element , comprising:an optical waveguide forming step of forming an optical waveguide extending in a first direction in a substrate by doping the substrate with an impurity for reducing a coercive electric field of the substrate;a ridge forming step of forming a first ridge part including the optical waveguide and a second ridge part intersecting the first ridge part; anda poling step of reversing a polarization direction of a region of the substrate divided by the second ridge part by applying voltage to the region.2. The method for manufacturing an optical waveguide element according to claim 1 ,wherein, in the ridge forming step, the second ridge part is formed so that a height of the second ridge part becomes greater than flatness of the substrate.3. The method for manufacturing an optical waveguide element according to claim 1 ,wherein, in the poling step, voltage is applied to the region using a liquid electrode.4. The method for manufacturing an optical waveguide element according to claim 1 ,wherein, in the ridge forming step, a third ridge part intersecting the first ridge part is further formed, andin the poling step, the polarization direction of a region sandwiched by the second ridge part and the third ridge part in the substrate is reversed by applying voltage to the region.5. An ...

Junction region between two waveguides and associated method of production

A photonic integrated device includes a first waveguide and a second waveguide. The first and second waveguides are mutually coupled at a junction region the includes a bulge region.

SACRIFICIAL GRATING COUPLER FOR TESTING V-GROOVED INTEGRATED CIRCUITS

Embodiments are directed to a method of forming an optical coupler system. The method includes forming at least one waveguide over a substrate, and forming a sacrificial optical coupler in a first region over the substrate. The method further includes configuring the sacrificial optical coupler to couple optical signals to or from the at least one waveguide, and forming a v-groove in the first region over the substrate, wherein forming the v-groove includes removing the sacrificial optical coupler from the first region. 1. A method of forming an optical coupler system , the method comprising:forming at least one waveguide over a substrate;forming a sacrificial optical coupler in a first region over the substrate;configuring the sacrificial optical coupler to couple optical signals to or from the at least one waveguide; andforming a v-groove in the first region over the substrate;wherein forming the v-groove includes removing the sacrificial optical coupler from the first region.2. The method of further comprising configuring the sacrificial optical coupler to couple optical signals to or from an optical fiber.3. The method of further comprising performing a test operation comprising coupling optical signals through the sacrificial optical coupler to or from the at least one waveguide.4. The method of further comprising:forming at least one optoelectronic component over the substrate; andcoupling the at least one waveguide to the at least one optoelectronic component;wherein performing the test operation further comprises coupling optical signals through the at least one waveguide to or from the at least one optoelectronic component.5. The method of claim 1 , wherein removing the sacrificial optical coupler from the first region comprises one or more etch operations.6. The method of further comprising configuring the v-groove to couple optical signals to or from the at least one waveguide.7. The method of further comprising coupling an optical fiber to the v-groove.8 ...

SACRIFICIAL COUPLER FOR TESTING V-GROOVED INTEGRATED CIRCUITS

Embodiments are directed to a method of forming an optical coupler system. The method includes forming at least one waveguide over a substrate, and forming gratings in a first region over the substrate. The method further includes configuring the gratings to couple optical signals to or from the at least one waveguide, and forming a v-groove in the first region over the substrate, wherein forming the v-groove includes removing the gratings from the first region. 1. A method of forming an optical coupler system , the method comprising:forming a first optoelectronic component over a substrate;forming a sacrificial optical coupler in a first region over the substrate;configuring the sacrificial optical coupler to couple optical signals to or from the first optoelectronic component; andforming a v-groove in the first region over the substrate;wherein forming the v-groove includes removing the sacrificial optical coupler from the first region.2. The method of claim 1 , wherein the sacrificial optical coupler comprises a sacrificial waveguide system.3. The method of claim 1 , wherein removing the sacrificial optical coupler from the first region comprises one or more etch operations.4. The method of further comprising performing a test operation comprising coupling optical signals through the sacrificial optical coupler to or from the first optoelectronic component.5. The method of further comprising:forming a second optoelectronic component over the substrate; andconfiguring the sacrificial optical coupler to couple optical signals to or from the second optoelectronic component.6. The method of further comprising performing a test operation comprising:coupling optical signals through the sacrificial optical coupler to or from the first optoelectronic component; andcoupling optical signals through the sacrificial optical coupler to or from the second optoelectronic component.7. The method of further comprising:forming a built-in-self-test (BIST) circuit over the substrate ...

PHOTONIC SEMICONDUCTOR DEVICE AND METHOD

A method includes forming silicon waveguide sections in a first oxide layer over a substrate, the first oxide layer disposed on the substrate, forming a routing structure over the first oxide layer, the routing structure including one or more insulating layers and one or more conductive features in the one or more insulating layers, recessing regions of the routing structure, forming nitride waveguide sections in the recessed regions of the routing structure, wherein the nitride waveguide sections extend over the silicon waveguide sections, forming a second oxide layer over the nitride waveguide sections, and attaching semiconductor dies to the routing structure, the dies electrically connected to the conductive features. 1. A method , comprising:forming silicon waveguide sections in a first oxide layer over a substrate, the first oxide layer disposed on the substrate;forming a routing structure over the first oxide layer, the routing structure comprising one or more insulating layers and one or more conductive features in the one or more insulating layers;recessing regions of the routing structure;forming nitride waveguide sections in the recessed regions of the routing structure, wherein the nitride waveguide sections extend over the silicon waveguide sections;forming a second oxide layer over the nitride waveguide sections; andattaching semiconductor dies to the routing structure, the dies electrically connected to the conductive features.2. The method of claim 1 , further comprising patterning the first oxide layer and the second oxide layer to form a cladding structure surrounding the silicon waveguide sections and the nitride waveguide sections claim 1 , the cladding structure having exposed sidewalls.3. The method of claim 1 , wherein the nitride waveguide sections are straight.4. The method of claim 1 , further comprising forming a photonic device over the first oxide layer claim 1 , wherein the photonic device comprises silicon claim 1 , and wherein the ...

Method of Fabrication Polymer Waveguide

A method of fabricating a waveguide device is disclosed. The method includes providing a substrate having an elector-interconnection region and a waveguide region and forming a patterned dielectric layer and a patterned redistribution layer (RDL) over the substrate in the electro-interconnection region. The method also includes bonding the patterned RDL to a vertical-cavity surface-emitting laser (VCSEL) through a bonding stack. A reflecting-mirror trench is formed in the substrate in the waveguide region, and a reflecting layer is formed over a reflecting-mirror region inside the waveguide region. The method further includes forming and patterning a bottom cladding layer in a wave-tunnel region inside the waveguide region and forming and patterning a core layer and a top cladding layer in the waveguide region.

Single edge coupling of chips with integrated waveguides

Techniques are provided for single edge coupling of chips with integrated waveguides. For example, a package structure includes a first chip with a first critical edge, and a second chip with a second critical edge. The first and second chips include integrated waveguides with end portions that terminate on the first and second critical edges. The second chip includes a signal reflection structure that is configured to reflect an optical signal propagating in one or more of the integrated waveguides of the second chip. The first and second chips are edge-coupled at the first and second critical edges such that the end portions of the integrated waveguides of the first and second chips are aligned to each other, and wherein all signal input/output between the first and second chips occurs at the single edge-coupled interface.

Optical Apparatus and Methods of Manufacture Thereof

Optical apparatus and methods of manufacture thereof An optical apparatus () for evanescently coupling an optical signal across an (interface () is described. The optical apparatus () comprises a first substrate () and a second substrate (). The optical signal is evanescently coupled between a first waveguide () formed by laser inscription of the first substrate () and a second waveguide () of the second substrate (). The first waveguide () comprises a curved section () configured to provide evanescent coupling of the optical signal between the first and second waveguides () via the interface ().

Photonic Package and Method Forming Same

A method includes bonding an electronic die to a photonic die. The photonic die includes an opening. The method further includes attaching an adapter onto the photonic die, with a portion of the adapter being at a same level as a portion of the electronic die, forming a through-hole penetrating through the adapter, with the through-hole being aligned to the opening, and attaching an optical device to the adapter. The optical device is configured to emit a light into the photonic die or receive a light from the photonic die.

OPTICAL MODULE

An optical module includes a circuit board and a silicon optical chip. The circuit board includes a plurality of circuit board bonding pads. The silicon optical chip includes a plurality of chip bonding pads corresponding to the plurality of circuit board bonding pads. The plurality of chip bonding pads are electrically connected to the corresponding circuit board bonding pads, so that the silicon optical chip is electrically connected to the circuit board. A chip bonding pad is electrically connected to at least one corresponding circuit board bonding pad through a plurality of bonding wires, or a circuit board bonding pad is electrically connected to at least one corresponding chip bonding pad through a plurality of bonding wires. A connecting line of two or more of bonding positions of the plurality of bonding wires on the circuit board bonding pads is inclined with respect to a connecting line of centers of the circuit board bonding pads. 1. An optical module , comprising:a circuit board including a plurality of circuit board bonding pads;a silicon optical chip including a plurality of chip bonding pads corresponding to the plurality of circuit board bonding pads, whereinthe plurality of chip bonding pads are electrically connected to the corresponding circuit board bonding pads, so that the silicon optical chip is electrically connected to the circuit board;a chip bonding pad is electrically connected to at least one corresponding circuit board bonding pad through a plurality of bonding wires, or a circuit board bonding pad is electrically connected to at least one corresponding chip bonding pad through a plurality of bonding wires; anda connecting line of two or more of bonding positions of the plurality of bonding wires on the circuit board bonding pads is inclined with respect to a connecting line of centers of the circuit board bonding pads.2. The optical module according to claim 1 , wherein a connecting line of bonding positions of the plurality of ...

Photonic Integrated Package and Method Forming Same

A method includes placing an electronic die and a photonic die over a carrier, with a back surface of the electronic die and a front surface of the photonic die facing the carrier. The method further includes encapsulating the electronic die and the photonic die in an encapsulant, planarizing the encapsulant until an electrical connector of the electronic die and a conductive feature of the photonic die are revealed, and forming redistribution lines over the encapsulant. The redistribution lines electrically connect the electronic die to the photonic die. An optical coupler is attached to the photonic die. An optical fiber attached to the optical coupler is configured to optically couple to the photonic die. 1. A method comprising:placing an electronic die and a photonic die over a carrier;encapsulating the electronic die and the photonic die in an encapsulant;planarizing the encapsulant until the electronic die and the photonic die are revealed;forming redistribution lines over the encapsulant, the electronic die and the photonic die, wherein the redistribution lines electrically connect at least the electronic die; andattaching an optical coupler to the photonic die, wherein an optical fiber attached to the optical coupler is configured to optically couple to the photonic die.2. The method of further comprising:removing a sacrificial material of the photonic die to reveal an opening extending from a front surface and an edge of the photonic die into the photonic die, wherein a waveguide in the photonic die is revealed to the opening, and the optical coupler comprises an edge coupler having a portion extending into the opening, and the optical fiber has a portion extending into a groove in the photonic die, with the groove being a part of the opening.3. The method of further comprising claim 2 , before placing the photonic die over the carrier:forming the opening in the photonic die; andfilling the sacrificial material into the opening.4. The method of claim 1 , ...

Waveguides

A dielectric waveguide comprising a dielectric probe at each end, wherein the dielectric probes are arranged to transfer energy.

Light guides having enhanced light extraction

Lightguides, devices incorporating lightguides, processes for making lightguides, and tools used to make lightguides are described. A lightguide includes light extractors arranged in a plurality of regions on a surface of the lightguide. The orientation of light extractors in each region is arranged to enhance uniformity and brightness across a surface of the lightguide and to provide enhanced defect hiding. The efficiency of the light extractors is controlled by the angle of a given light extractor face with respect to a light source illuminating the light guide.

Controlling the composition of electro-absorption media in optical devices

Forming an optical device includes growing an electro-absorption medium in a variety of different regions on a base of a device precursor. The regions include a component region and the regions are selected so as to achieve a particular chemical composition for the electro-absorption medium included in the component region. An optical component is formed on the device precursor such that the optical component includes at least a portion of the electro-absorption medium from the component region. Light signals are guided through the electro-absorption medium from the component region during operation of the component.

PHOTONIC INTEGRATION PLATFORM

A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer. 1. A method comprising:forming a first waveguide in an insulation layer of an optical device;after forming the first waveguide, disposing a crystalline, semiconductor layer on the insulation layer; andforming a second waveguide in the semiconductor layer, wherein the second waveguide at least partially overlaps the first waveguide in the insulation layer.2. The method of claim 1 , wherein at least a portion of the first waveguide and a portion of the second waveguide are tapered where the first and second waveguides overlap in the optical device.3. The method of claim 1 , wherein forming the first waveguide further comprises:forming a waveguide adapter in the insulation layer, the waveguide adapter comprising multiple prongs exposed at an external coupling surface of the optical device, the external coupling surface is configured to couple to an external light source.4. The method of claim 3 , wherein the waveguide adapter comprises a first prong that is disposed above a second prong in the insulation layer relative to the substrate claim 3 , and wherein a dimension of the second prong decreases as the second prong extends away from the external coupling surface and a dimension of the first prong increases as the first prong extends away from the external coupling surface.5. The method of claim 3 , further comprising:forming the ...

INTEGRATED SUB-WAVELENGTH GRATING SYSTEM

An integrated grating element system includes a first transparent layer formed on an optoelectronic substrate layer which includes at least two optoelectronic components, a first grating layer disposed on the first transparent layer which includes at least two sub-wavelength grating elements formed therein aligned with active regions of the optoelectronic components, and a second grating layer placed at a distance from the first grating layer such that light propagates between a diffraction grating element formed within the second grating layer and the at least two sub-wavelength grating elements. 1. An integrated grating element system comprising:a first transparent layer formed on an optoelectronic substrate layer, said optoelectronic substrate layer comprising at least two optoelectronic components;a first grating layer disposed on said first transparent layer, said grating layer comprising at least two sub-wavelength grating elements formed therein aligned with active regions of said optoelectronic components; anda second grating layer at a distance from said first grating layer such that light propagates between a diffraction grating element formed within said second grating layer and said at least two sub-wavelength grating elements.2. The system of claim 1 , wherein said distance between said first grating layer and said second grating layer comprises a second transparent layer.3. The system of claim 1 , further comprising claim 1 , reflective surfaces positioned to bounce light between said first grating layer and said second grating layer between said diffraction grating element and said sub-wavelength grating elements.4. The system of claim 1 , wherein said at least two optoelectronic components comprise optical sources to project light of different wavelengths into said sub-wavelength grating elements.5. The system of claim 4 , wherein said sub-wavelength grating elements are to collimate and angle light projected from said optical sources towards said ...

DOUBLE LAYER INTERLEAVED P-N DIODE MODULATOR

A method for fabricating an optical modulator includes forming n-type layer, a first oxide portion on a portion of the n-type layer, and a second oxide portion on a second portion of the n-type layer, patterning a first masking layer over the first oxide portion, portions of a planar surface of the n-type layer, and portions of the second oxide portion, implanting p-type dopants in the n-type layer to form a first p-type region and a second p-type region, removing the first masking layer, patterning a second masking layer over the first oxide portion, a portion of the first p-type region, and a portion of the n-type layer, and implanting p-type dopants in exposed portions of the n-type layer, exposed portions of the first p-type region, and regions of the n-type layer and the second p-type region disposed between the substrate and the second oxide portion. 1. A method for fabricating an optical modulator device , the method comprising:forming n-type doped material layer on a substrate, a first oxide portion on a portion of the n-type doped material layer, and a second oxide portion on a second portion of the n-type doped material layer;patterning a first masking layer over the first oxide portion, portions of a planar surface of the n-type doped material layer, and portions of the second oxide portion;implanting p-type dopants in the n-type doped material layer to form a first p-type doped region and a second p-type doped region, wherein the first masking layer is operative to impinge the p-type dopants that pass through the first masking layer such that the first p-type region extends from the planar surface of the n-type doped material layer to a first depth in the n-type doped material layer, the second p-type doped region extending from a second depth in the n-type doped material layer to the substrate;removing the first masking layer;patterning a second masking layer over the first oxide portion, a portion of the first p-type doped region, and a portion of the ...

Managing Adhesive Curing for Photonic System Assembly

An apparatus for assembling a photonic system comprising a photonic integrated circuit (PIC) includes: a support structure configured to support the PIC; and a rigid structure surrounding a hollow passage that extends to an opening at a distal end of the rigid structure. The rigid structure includes an optically transmissive portion configured to transmit at least about 50% of a received beam of ultraviolet light, and configured such that at least a portion of the ultraviolet light transmitted through the rigid structure is incident upon an edge surface of the PIC at an angle of incidence that is less than about 60 degrees.

OPTICAL WAVEGUIDE AND MANUFACTURING METHOD THEREOF

The optical waveguide includes: a lower clad layer, a core layer, an upper clad layer, a substrate, and a mirror, the lower clad layer, the core layer, and the upper clad layer being sequentially laminated to the substrate, the mirror being formed on the core layer, in which the substrate has an opening, the maximum diameter of the opening is larger than that of luminous flux reflected by the mirror, and the maximum diameter of the opening is 240 μm or less. The optical waveguide is capable of transmitting a light signal regardless of the type of the substrate, suppressing the spread of a light signal reflected from the mirror, and transmitting a light signal with a low optical transmission loss. 1. An optical waveguide comprising: a lower clad layer , a core layer , an upper clad layer , a substrate , and a mirror , the lower clad layer , the core layer , and the upper clad layer being sequentially laminated to the substrate , the mirror being formed on the core layer , wherein the substrate has an opening , the maximum diameter of the opening is larger than that of luminous flux reflected by the mirror , and the maximum diameter of the opening is 240 μm or less , and a pillar-shaped transparent member projecting from the opening beyond the back surface direction of the substrate , wherein a projecting part of the pillar-shaped transparent member has a pillar shape.2. The optical waveguide according to claim 1 , further comprising a reinforcing plate connected with at least a part of the sidewall of the pillar-shaped transparent member.3. The optical waveguide according to claim 2 , wherein the reinforcing plate is pattern-formed.4. The optical waveguide according to claim 2 , wherein the reinforcing plate is a metal layer.5. The optical waveguide according to claim 1 , further comprising a transparent resin layer A formed of a transparent resin a between the substrate and the lower clad layer claim 1 , wherein the opening is filled with the transparent resin a.6. ...

Optical Switches with Surface Grating Couplers and Edge Couplers

A photonic integrated circuit (PIC) comprises an optical switch, a plurality of input edge couplers comprising a first input edge coupler and coupled to the optical switch, a plurality of input surface grating couplers (SGCs) comprising a first input SGC and coupled to the optical switch, a plurality of output edge couplers comprising a first output edge coupler and coupled to the optical switch, and a plurality of output SGCs comprising a first output SGC and coupled to the optical switch. A method of fabricating a PIC comprises patterning and etching a silicon substrate to produce a first optical switch, a first surface grating coupler (SGC) coupled to the first optical switch, and a first edge coupler coupled to the first optical switch. 1. A photonic integrated circuit (PIC) comprising:an optical switch;a plurality of input edge couplers comprising a first input edge coupler and coupled to the optical switch;a plurality of input surface grating couplers (SGCs) comprising a first input SGC and coupled to the optical switch;a plurality of output edge couplers comprising a first output edge coupler and coupled to the optical switch; anda plurality of output SGCs comprising a first output SGC and coupled to the optical switch.2. The PIC of claim 1 , further comprising a chip claim 1 , wherein the chip comprises the optical switch claim 1 , the input edge couplers claim 1 , the input SGCs claim 1 , the output edge couplers claim 1 , and the output SGCs.3. The PIC of claim 2 , wherein the chip primarily comprises silicon.4. The PIC of claim 2 , wherein the chip is a silicon-on-insulator (SOI) chip.5. The PIC of claim 1 , wherein the optical switch is a dilated optical switch.6. The PIC of claim 5 , wherein the optical switch comprises a Benes network.7. The PIC of claim 1 , wherein the optical switch comprises an input cell and an output cell claim 1 , wherein the input cell comprises a first input and a second input claim 1 , and wherein the output cell comprises a ...

SURFACE-MOUNT CONNECTOR STRUCTURE FOR EMBEDDED OPTICAL AND ELECTRICAL TRACES

A system for use with optical and electrical signaling is disclosed. The system may include a printed circuit board (PCB) that includes a plurality of layers vertically stacked between a first face and a second face and a first optical signal transmission path within a first internal layer of the plurality of layers. The PCB may also include an electrical signal transmission path and a via extending through the plurality of layers. The via may include a first reflective surface that is configured to reflect light between the first optical signal transmission path and an opening of the via on the first face and an electrically conductive material that is configured to electrically connect the electrical signal transmission path to a portion of the via on the first face. 1. A method for forming a system for use with optical and electrical signaling in a printed circuit board that includes a plurality of layers vertically stacked between a first face and a second face , a first optical signal transmission path within a first internal layer of the plurality of layers and an electrical signal transmission path , the method comprising:creating an opening in the printed circuit board that intersects the first optical signal transmission path and the electrical signal transmission path;depositing an electrically conductive and optically reflective material in the opening;removing an inner portion of the electrically conductive and optically reflective material to form a reflective surface that is configured to reflect light between the optical signal transmission path and an opening of the via on the first face; andremoving an outer portion of the electrically conductive material from the via to allow light from the optical signal transmission path to reach the reflective surface, while leaving a portion of the conductive material in the via in contact with the electrical signal transmission path.2. The method of claim 1 , wherein removing an inner portion of the ...

LOW-LOSS WAVEGUIDE TRANSITION

A waveguide device that includes a first waveguide, a second waveguide and a transition region. The first waveguide has a first height and the second waveguide has a second height different from the first height. The transition region is between the first waveguide and the second waveguide and includes an asymmetrical taper of the first waveguide. 1. A waveguide device comprising:a first waveguide with a first height;a second waveguide with a second height different from the first height;a transition region between the first waveguide and the second waveguide, the transition region comprising an asymmetrical taper of the first waveguide.2. The waveguide device of claim 1 , wherein the first height and the second height is along a first direction claim 1 , and the asymmetrical taper is asymmetric about an imaginary plane that bisects a width of the first waveguide claim 1 , wherein the width of the first waveguide is along a second direction perpendicular to the first direction.3. The waveguide device of claim 1 , wherein the asymmetrical taper begins at a first side of the first waveguide claim 1 , but not a second side of the first waveguide claim 1 , wherein the first side and the second side are opposing sides of the first waveguide.4. The waveguide device of claim 1 , wherein the transition region comprises a transition tip with a width less than 50 nm.5. The waveguide device of claim 1 , wherein the second waveguide has a first width at the transition region and a second width a first distance from the transition region claim 1 , wherein the first width is greater than the second width.6. The waveguide device of claim 1 , wherein the second waveguide includes a tapered region.7. The waveguide device of claim 6 , wherein the tapered region of the second waveguide begins at the transition region.8. The waveguide device of claim 6 , wherein the tapered region of the second waveguide is a symmetric taper.9. The waveguide device of claim 6 , wherein the tapered ...

Waveguide resonator component and method for the production thereof

The invention pertains to the field of electrical engineering/electronics and relates to a waveguide resonator component, which can be used, for example, in integrated circuits. The problem addressed by the invention is that of producing a waveguide resonator component simply and economically. The problem is solved by a waveguide resonator component in which a substrate ( 1 ) having two waveguides ( 3 ) is present and a microtube ( 2 ) is present as resonator, wherein the resonator has a respective recess ( 4 ) in the region of each waveguide in order to form an intermediate space between the waveguide and the resonator. The aim is additionally achieved by a method in which a sacrificial layer is applied to a substrate having two waveguides and at least a second layer is applied to the sacrificial layer, and thereafter the sacrificial layer is at least partially removed and the resonator is produced in the form of a microtube by rolling up the second layer and possible additional layers.

On-chip optical polarization controller

An example optical polarization controller can include a substantially planar substrate and a waveguide unit cell formed on the substantially planar substrate. The waveguide unit cell can include a first out-of-plane waveguide portion and a second out-of-plane waveguide portion coupled to the first out-of-plane waveguide portion. Each of the first and second out-of-plane waveguide portions can respectively include a core material layer arranged between a first optical cladding layer having a first stress-response property and a second optical cladding layer having a second stress-response property. The first and second stress-response properties can be different such that each of the first and second out-of-plane waveguide portions is deflected by a deflection angle.

Optical component with angled-facet waveguide

A system comprises a first optical component comprising a component body; at least a first waveguide formed in the component body, wherein the first waveguide is substantially mirror-symmetrical in shape relative to a line at or near the center of the first waveguide; and a self-alignment feature configured to assist in optically-coupling the first waveguide with a second waveguide located outside of the component body.

Fiber attach assembly and test automation

An approach compatible with high volume manufacturing for assembling a photonic chip with integrated optical fibers involving placing a die on an assembly station, providing one or more optical fibers, placing the one or more optical fibers into corresponding one or more grooves of the die, bonding the one or more optical fibers to the die and performing an optical test of the die using the one or more optical fibers, and severing the one or more optical fibers. The die can be removed from the assembly station while retaining a predetermined length of each severed optical fiber and the one or more optical fibers can be prepared for assembly to a next die.

NON-PLANAR WAVEGUIDE STRUCTURES

The present disclosure relates to semiconductor structures and, more particularly, to non-planar waveguide structures and methods of manufacture. The structure includes: a first waveguide structure; and a non-planar waveguide structure spatially shifted from the first waveguide structure and separated from the first waveguide structure by an insulator material. 1. A structure comprising:a first non-planar waveguide structure comprising semiconductor material; anda second non-planar waveguide structure comprising the semiconductor material and spatially shifted in a vertical orientation from the first non-planar waveguide structure such that lower horizontal sections of the first non-planar waveguide and the second non-planar waveguide are in a different plane and separated from one another in both the vertical orientation and a horizontal orientation by an insulator material.2. The structure of claim 1 , wherein the first non-planar waveguide structure crosses the second non-planar waveguide structure.3. The structure of claim 2 , wherein the crossing occurs at a non-planar portion of the second non-planar waveguide structure.4. (canceled)5. (canceled)6. The structure of claim 1 , wherein the first non-planar waveguide structure is vertically shifted and crosses over the second non-planar waveguide structure.7. The structure of claim 6 , wherein the first non-planar waveguide structure is vertically shifted by 180 degrees from the non-planar waveguide structure.820.-. (canceled)21. The structure of claim 1 , wherein the second non-planar waveguide structure includes rounded corners transitioning between vertical sections and the horizontal sections.22. The structure of claim 21 , wherein the first non-planar waveguide structure and the second non-planar waveguide structure cross between vertical sections of the second non-planar waveguide structure and the lower horizontal sections of the second non-planar waveguide are on a same plane as upper horizontal sections ...

Method of Making a Metal Grating in a Waveguide and Device Formed

A method of making a grating in a waveguide includes forming a waveguide material over a substrate, the waveguide material having a thickness less than or equal to about 100 nanometers (nm). The method further includes forming a photoresist over the waveguide material and patterning the photoresist. The method further includes forming a first set of openings in the waveguide material through the patterned substrate and filling the first set of openings with a metal material. 1. A waveguide structure comprising:a substrate;a dielectric layer over the substrate, the dielectric layer comprising a light-transmissive material, the dielectric layer having a first surface facing towards the substrate and a second surface facing away from the substrate;a plurality of first metal features extending from the first surface of the dielectric layer to the second surface of the dielectric layer, the first metal features having a first pitch; anda plurality of second metal features extending from the first surface of the dielectric layer to the second surface of the dielectric layer, the second metal features having a second pitch, the second pitch being different from the first pitch.2. The waveguide structure of claim 1 , wherein the light-transmissive material is one of silicon dioxide claim 1 , silicon carbide claim 1 , carbon nitride claim 1 , silicon oxynitride claim 1 , or silicon nitride.3. The waveguide structure of claim 1 , wherein a thickness of the dielectric layer is less than or equal to about 100 nanometers.4. The waveguide structure of further comprising:an insulating layer disposed between the dielectric layer and the substrate.5. The waveguide structure of claim 4 , wherein the insulating layer comprises one of silicon dioxide claim 4 , silicon carbide claim 4 , carbon nitride claim 4 , silicon oxycarbide claim 4 , or silicon nitride.6. The waveguide structure of claim 1 , wherein each of the first metal features and each of the second metal features have a ...

OPTOELECTRONIC DEVICE

An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region, and wherein the optically active region is formed of: SiGeSn, GeSn, InGaNAs, or InGaNAsSb. 1. An optoelectronic device , comprising:a substrate;a regrown cladding layer, on the substrate;an insulating layer;an optically active region, above the regrown cladding layer;a first waveguide; anda second waveguide,wherein:the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region,the optically active region is formed of: SiGeSn, GeSn, InGaNAs, or InGaNAsSb,the insulating layer is directly on the substrate, over a first region of the substrate,the regrown cladding layer is on the substrate, over a second region of the substrate, different from the first region of the substrate,the first waveguide is on the insulating layer,the second waveguide is in the optically active region,the substrate is a silicon substrate,the insulating layer is an oxide layer,the first waveguide is over the first region of the substrate and extends to a boundary between the first region of the substrate and the second region of the substrate,the second waveguide is over the second region of the substrate and extends to the boundary between the first region of the substrate and the second region of the substrate,the first waveguide is configured to support a first optical mode, andthe second waveguide is configured to support a second optical mode, coupled to the first optical mode.2. The optoelectronic device of ...

GAS DETECTION APPARATUS

A gas detection apparatus () includes a first layer () and a second layer () disposed opposite the first layer () in a predetermined direction (z-axis direction). The first layer () includes a light emitter that emits light and a light receiver that receives the light after the light passes through a waveguide. The second layer () includes a light input unit of the waveguide opposite the light emitter in the predetermined direction (z-axis direction) and a light output unit of the waveguide opposite the light receiver in the predetermined direction (z-axis direction). The gas detection apparatus () can be miniaturized. 1. A gas detection apparatus comprising:a first layer; anda second layer disposed opposite the first layer in a predetermined direction; a light emitter configured to emit light; and', 'a light receiver configured to receive the light after the light passes through a waveguide;, 'wherein the first layer comprises'} a light input unit of the waveguide opposite the light emitter in the predetermined direction; and', 'a light output unit of the waveguide opposite the light receiver in the predetermined direction., 'wherein the second layer comprises'}2. The gas detection apparatus of claim 1 , wherein the second layer comprises all of the waveguide.3. The gas detection apparatus of claim 1 , wherein the first layer is connected to the second layer by an attachment portion so as to form a vent communicating with the waveguide.4. The gas detection apparatus of claim 3 , wherein the attachment portion comprises adhesive claim 3 , and the adhesive comprises particles having a size of a predetermined value or greater.5. The gas detection apparatus of claim 3 , wherein the first layer comprises a terminal claim 3 , and the attachment portion is provided in a line on the terminal.6. The gas detection apparatus of claim 3 ,wherein the vent is provided in a diagonal direction relative to the attachment portion; andwherein a length of the vent is at least √2 times ...

WAVEGUIDE BENDS WITH MODE-CONFINING STRUCTURES

Waveguide bends and methods of fabricating waveguide bends. A first waveguide bend is contiguous with a waveguide. A second waveguide bend is spaced from a surface at an inner radius of the first waveguide bend by a gap. The second waveguide bend may have a substantially concentric arrangement with the first waveguide bend. 1. A structure comprising:a substrate;a dielectric cladding layer over the substrate;a waveguide on the dielectric cladding layer;a first waveguide bend on the dielectric cladding layer, the first waveguide bend contiguous with the waveguide, and the first waveguide bend having a surface arranged in a first arc defining an inner radius; anda second waveguide bend on the dielectric cladding layer, the second waveguide bend having a surface arranged in a second arc spaced from the surface at the inner radius of the first waveguide bend by a first gap, and the second waveguide bend having a first end and a second end,wherein the second waveguide bend curves in the second arc from the first end of the second waveguide bend to the second end of the second waveguide bend, the surface of the second waveguide bend is arranged in its entirety inside of the surface arranged in the first arc at the inner radius of the first waveguide bend, and the surface of the second waveguide bend is concentric with the surface at the inner radius of the first waveguide bend.2. The structure of wherein the waveguide claim 1 , the first waveguide bend claim 1 , and the second waveguide bend are coplanar claim 1 , and the waveguide claim 1 , the first waveguide bend claim 1 , and the second waveguide bend are comprised of silicon nitride.3. The structure of wherein the first waveguide bend is comprised of silicon nitride and the second waveguide bend is comprised of polysilicon.4. The structure of wherein the first waveguide bend and the second waveguide bend are comprised of a single-crystal semiconductor material.5. The structure of wherein the first waveguide bend and ...

OPTICAL DETECTOR, FABRICATION METHOD THEREOF, FINGERPRINT RECOGNITION SENSOR, AND DISPLAY DEVICE

An optical detector includes a stacked structure, an active layer, a gate insulating layer, and a gate electrode. The stacked structure includes a first electrode, a photoelectric conversion layer, a second electrode, a first insulating layer, and a third electrode. The active layer is electrically coupled to one of the first electrode or the second electrode, and electrically coupled to the third electrode. The gate insulating layer is arranged on the active layer. The gate electrode is arranged on the gate insulating layer. 1. An optical detector , comprising:a stacked structure including a first electrode, a photoelectric conversion layer, a second electrode, a first insulating layer, and a third electrode;an active layer electrically coupled to one of the first electrode or the second electrode, and electrically coupled to the third electrode;a gate insulating layer on the active layer; anda gate electrode on the gate insulating layer.2. The optical detector according to claim 1 , further comprising:a second insulating layer arranged between the active layer and the photoelectric conversion layer, and between the active layer and the second electrode,wherein the active layer is electrically coupled to the first electrode and is electrically insulated from the second electrode.3. The optical detector according to claim 2 , wherein:the second insulating layer is arranged on a side wall of the photoelectric conversion layer and a sidewall of the second electrode; andthe active layer is formed on an edge region of an upper surface of the first electrode, the second insulating layer, and the third electrode.4. The optical detector according to claim 1 , wherein:the active layer is electrically coupled to the second electrode and is electrically insulated from the first electrode; andthe active layer is formed on a sidewall of the second electrode, a sidewall of the first insulating layer, and the third electrode.5. The optical detector according to claim 1 , wherein: ...

SILICON PHOTONIC CHIP WITH INTEGRATED ELECTRO-OPTICAL COMPONENT AND LENS ELEMENT

Embodiments include a silicon photonic chip having a substrate, an optical waveguide on a surface of the substrate and a cavity. The cavity includes an electro-optical component, configured for emitting light perpendicular to said surface and a lens element arranged on top of the electro-optical component. The lens is configured for collimating light emitted by the electro-optical component. The chip also includes a deflector arranged on top of the lens element and configured for deflecting light collimated through the latter toward the optical waveguide. The lens element includes electrical conductors connected to the electro-optical component. The electrical conductors of the lens element may for instance include one or more through vias, one or more bottom electrical lines on a bottom side of the lens element (facing the electro-optical component), and at least one top electrical line. 1. A method of fabrication of a silicon photonic chip , the method comprising:providing a substrate, the substrate having an optical waveguide on a surface thereof and further exhibiting a cavity therein;providing an electro-optical component, a lens element comprising electrical conductors, and a deflector; to connect the electrical conductors of the lens element to terminals of the electro-optical component; and', 'to allow the lens element to collimate light emitted by the electro-optical component, in operation;, 'coupling the lens element to the electro-optical component, so aspositioning the coupled lens element and electro-optical component in the cavity; andarranging the deflector on top of the lens element, so as for the deflector to deflect light collimated through the lens element toward the optical waveguide, in operation.2. The method of fabrication of claim 1 , wherein the electro-optical component is configured for emitting light perpendicular to the surface of the substrate.3. The method of fabrication of claim 1 , further comprising arranging a driver for the ...

Optical Integrated Circuit Systems, Devices, and Methods of Fabrication

An optical integrated circuit device includes a semiconductor substrate and a first waveguide made of a first material and disposed over the semiconductor substrate. The first waveguide includes a parallel region and a tapered region. The optical integrated circuit device further includes a first cladding structure disposed over and surrounding the parallel region of the first waveguide, a first extension made of the first material and disposed over the semiconductor substrate, and an electrostatic discharge (ESD) protection structure electrically coupled to the first extension. The first extension physically contacts the parallel region of the first waveguide. The first extension includes a first portion within the first cladding structure and a second portion outside the first cladding structure. 1. An optical integrated circuit device comprising:a semiconductor substrate;a first waveguide made of a first material and disposed over the semiconductor substrate, the first waveguide comprising a parallel region and a tapered region;a first cladding structure disposed over and surrounding the parallel region of the first waveguide;a first extension made of the first material and disposed over the semiconductor substrate, the first extension physically contacting the parallel region of the first waveguide, wherein the first extension comprises a first portion within the first cladding structure and a second portion outside the first cladding structure; andan electrostatic discharge (ESD) protection structure electrically coupled to the first extension.2. The device according to claim 1 , wherein the first material is silicon and the first waveguide is a silicon waveguide.3. The device according to claim 1 , wherein the first cladding structure comprises a plurality of thin and thick dielectric layers.4. The device according to claim 1 , further comprising:an electrically insulating layer disposed between the semiconductor substrate and the first waveguide.5. The device ...

SEMICONDUCTOR DEVICES INCLUDING PHOTODETECTORS INTEGRATED ON WAVEGUIDES AND METHODS FOR FABRICATING THE SAME

Semiconductor devices and methods for fabricating semiconductor devices are provided. In one example, a method for fabricating a semiconductor device includes etching a waveguide layer in a detector region of a semiconductor substrate to form a recessed waveguide layer section. A ridge structure germanium (Ge) photodetector is formed overlying a portion of the recessed waveguide layer section. 1. A method for fabricating a semiconductor device , the method comprising:etching a waveguide layer in a detector region of a semiconductor substrate to form a recessed waveguide layer section; andforming a ridge structure germanium (Ge) photodetector overlying a portion of the recessed waveguide layer section.2. The method of claim 1 , wherein etching the waveguide layer comprises removing material from the waveguide layer for a depth of from about 1.25 to about 2.75 μm to form the recessed waveguide layer section.3. The method of claim 1 , wherein etching the waveguide layer comprises forming the recessed waveguide layer section having a thickness of from about 0.25 to about 0.75 μm.4. The method of claim 1 , wherein forming the ridge structure Ge photodetector comprises:forming a Ge fill overlying the recessed waveguide layer section;selectively etching the Ge fill to form a first recessed Ge layer section, a second recessed Ge layer section, and a Ge ridge structure disposed between the first and second recessed Ge layer sections;P+ doping the first recessed Ge layer section and a first sidewall portion of the Ge ridge structure that are adjacent to each other to form a P+ electrode; andN+ doping the second recessed Ge layer section and a second sidewall portion of the Ge ridge structure that are adjacent to each other to form an N+ electrode.5. The method of claim 4 , wherein P+ doping and N+ doping comprise forming the P+ and N+ electrodes such that the P+ and N+ electrodes are separated from each other by a Ge core ridge portion of the Ge ridge structure claim 4 , ...

OPTICAL WAVEGUIDE AND MANUFACTURING METHOD THEREOF

The optical waveguide includes: a lower clad layer, a core layer, an upper clad layer, a substrate, and a mirror, the lower clad layer, the core layer, and the upper clad layer being sequentially laminated to the substrate, the mirror being formed on the core layer, in which the substrate has an opening, the maximum diameter of the opening is larger than that of luminous flux reflected by the mirror, and the maximum diameter of the opening is 240 μm or less. The optical waveguide is capable of transmitting a light signal regardless of the type of the substrate, suppressing the spread of a light signal reflected from the mirror, and transmitting a light signal with a low optical transmission loss. 1. An optical waveguide comprising: a lower clad layer , a core layer , an upper clad layer , a substrate , and a mirror , the lower clad layer , the core layer , and the upper clad layer being sequentially laminated to the substrate , the mirror being formed on the core layer , wherein the substrate has an opening , the maximum diameter of the opening is larger than that of luminous flux reflected by the mirror , and the maximum diameter of the opening is 240 μm or less.2. The optical waveguide according to claim 1 , further comprising a pillar-shaped transparent member projecting from the opening to the back surface direction of the substrate.3. The optical waveguide according to claim 2 , further comprising a reinforcing plate connected with at least a part of the sidewall of the pillar-shaped transparent member.4. The optical waveguide according to claim 3 , wherein the reinforcing plate is pattern-formed.5. The optical waveguide according to claim 3 , wherein the reinforcing plate is a metal layer.6. The optical waveguide according to claim 1 , further comprising a transparent resin layer A formed of a transparent resin a between the substrate and the lower clad layer claim 1 , wherein the opening is filled with the transparent resin a.7. The optical waveguide ...

Apparatus and method for passive alignment of optical devices

An apparatus for passive alignment of optical devices comprises a substrate including a trench in a top surface thereof, where the trench has a first end positioned at an edge of the substrate and a second end positioned at an interior region of the substrate, and a lens disposed on the top surface of the substrate adjacent to the second end of the trench. The apparatus further includes a top holder having a longitudinal indentation in a bottom surface thereof for mounting an optical fiber. The longitudinal indentation is sized to fit a top portion of the optical fiber such that a bottom portion of the optical fiber extends below the bottom surface of the top holder when the optical fiber is mounted therein. One or both of the substrate and the top holder include one or more spacer features configured for three-dimensional (3D) alignment of the lens with the optical fiber when the top holder is brought into contact with the substrate.

OPTICAL DEVICE USING ECHELLE GRATING THAT PROVIDES TOTAL INTERNAL REFLECTION OF LIGHT

Embodiments of the present disclosure are directed toward techniques and configurations for an optical device having a semiconductor layer to propagate light and a mirror disposed inside the semiconductor layer and having echelle grating reflective surface to substantially totally internally reflect the propagating light inputted by one or more input waveguides, to be received by one or more output waveguides. The waveguides may be disposed in the semiconductor layer under a determined angle relative to the mirror reflective surface. The determined angle may be equal to or greater than a total internal reflection angle corresponding to the interface, to provide substantially total internal reflection of light by the mirror. The mirror may be formed by an interface of the semiconductor layer comprising the mirror reflective surface and another medium filling the mirror, such as a dielectric. Other embodiments may be described and/or claimed. 1. An optical apparatus comprising:a semiconductor layer to propagate light from at least one light source;a mirror disposed inside the semiconductor layer, and having echelle grating reflective surface to reflect and refocus the propagating light;at least one input optical waveguide disposed inside the semiconductor layer to spatially disperse the propagating light onto the mirror; andat least one output optical waveguide disposed inside the semiconductor layer to receive at least a portion of light reflected by the mirror,wherein the input and output optical waveguides are disposed under a determined angle relative to the mirror reflective surface, to provide substantially total internal reflection of light by the mirror.2. The optical apparatus of claim 1 , wherein the mirror is formed in a trench disposed in the semiconductor layer.3. The optical apparatus of claim 2 , wherein the mirror reflective surface is etched on at least one facet of the trench.4. The optical apparatus of claim 3 , wherein the trench is filled with a ...

SEMICONDUCTOR DEVICE

A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect. 1. A method for fabricating a semiconductor device for use in an optical application , the method comprising:providing an optically passive aspect that is operable in a substantially optically passive mode;providing an optically active material having a material that is operable in a substantially optically active mode;wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure; andwherein the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.2. The method according to claim 1 , wherein the optically active material is substantially selectively formed in the predefined structure.3. The method according to claim 1 , wherein the optically active material is formed relative to the optically passive aspect so as to exceed an area of the predefined structure.4. The method according to claim 3 , wherein excess optically active material is removed so that the optically active material is provided in the predefined structure.5. The method according to claim 4 , wherein the excess optically active material is removed by wet-chemical etching or chemical mechanical polishing.6. The method according to claim 1 , wherein a structural characteristic of the predefined structure is chosen to facilitate the optically active material to be ...

OPTICAL WAVEGUIDE DIRECTIONAL COUPLER AND METHOD FOR MAKING SAME

An optical waveguide directional coupler includes a base having a planar member and a ridge member and an optical waveguide in the base. The ridge member extends from the planar member and has an upper surface where the optical waveguide exposed. The optical waveguide includes a first flat side surface, a second flat side surface parallel to the first flat side surface, a third flat side surface, a fourth flat side surface parallel to the third flat side surface, and a first flat connection side surface. An included angle θ1 between the first and third flat side surfaces is an obtuse angle, an included acute angle α1 is formed between the first flat connection side surface and the second flat side surface, and θ1 and α1 satisfy α1<(180°−θ1).