ЭЛЕМЕНТАРНЫЙ ЭЛЕМЕНТ

Использование: для обеспечения возможности перемещения частиц. Сущность изобретения заключается в том, что элементарный элемент для обеспечения возможности переноса частиц содержит от источника испускания рабочей среды, являющегося частью элементарного элемента, его возбужденные состояния или электромагнитные поля (далее называемые рабочими средами) или участка перемещения рабочей среды в элементарном элементе до источника поглощения рабочей среды, являющегося частью элементарного элемента, или от источника поглощения рабочей среды, являющегося частью элементарного элемента, или участка перемещения рабочей среды до части с источником испускания рабочей среды, ансамбль, поддерживаемый между концом с источником испускания рабочей среды или концом с источником поглощения рабочей среды и внешней стенкой, посредством которой обеспечена защита пучков рабочей среды от воздействия внешней среды или внутри или снаружи которой имеется ноль или более участков управления, модификационных участков, ...

ЭЛЕМЕНТАРНЫЙ ИЗЛУЧАТЕЛЬ

Dreielektrodenschaltungselement

In einer veranschaulichenden Ausführungsform umfasst ein Dreielektrodenschaltungselement ein Isoliermaterial, einen Hohlraum in dem Isoliermaterial, eine erste und eine zweite Elektrode, die in dem Hohlraum durch einen Abstand getrennt sind, der ausreichend klein ist, dass eine Elektronenemission hervorgerufen wird, wenn geeignete Betriebsspannungen an die erste und die zweite Elektrode angelegt werden, und eine Gate-Elektrode in der Nähe von einer der ersten und der zweiten Elektrode. Eine Spannung, die an die Gate-Elektrode angelegt wird, kann den Stromfluss zwischen der ersten und der zweiten Elektrode steuern. Das Schaltungselement kann in einer ebenen Struktur ausgeführt werden, in welcher die Elektroden im Wesentlichen in derselben Ebene gebildet werden; oder es kann eine mehrschichtige Vorrichtung sein, in welcher sich einige oder alle Elektroden in separaten Schichten aus leitfähigem Material befinden. Verfahren zum Bilden des Schaltungselements werden ebenfalls offenbart. Veranschaulichende ...

Feldemissionsvorrichtungen und Verfahren zu ihrer Herstellung

Gemäß einer Ausführungsform der vorliegenden Erfindung weist eine elektronische Vorrichtung ein erstes Emitter/Kollektor-Gebiet und ein zweites Emitter/Kollektor-Gebiet auf, die in einem Substrat angeordnet sind. Das erste Emitter/Kollektor-Gebiet hat eine erste Kante/Spitze, und das zweite Emitter/Kollektor-Gebiet hat eine zweite Kante/Spitze. Ein Zwischenraum trennt die erste Kante/Spitze von der zweiten Kante/Spitze. Das erste Emitter/Kollektor-Gebiet, das zweite Emitter/Kollektor-Gebiet und der Zwischenraum bilden eine Feldemissionsvorrichtung.

IMPROVED FIELD EMISSION DEVICE

Device comprising nanostructures and method of manufacturing thereof

A method for manufacturing of a device (300, 410-412) comprising a substrate (201) comprising a plurality of sets of nanostructures (207) arranged on the substrate, wherein each of the sets of nanostructures is individually electrically addressable, the method comprising the steps of: providing (101) the substrate (200) having a first (202) face, the substrate having an insulating layer (210) comprising an insulating material arranged on the first face (202) of the substrate forming an interface (203) between the insulating layer and the substrate; providing (102) a plurality of stacks (204) on the substrate, the stacks being spaced apart from each other, wherein each stack comprises a first conductive layer (205) comprising a first conductive material and a second conductive layer (206) comprising a second conductive material different from the first material, the second conductive layer being arranged on the first conductive layer for catalyzing nanostructure growth; heating (103) the ...

COMPOSITE, ORDERED MATERIAL HAVING SHARP SURFACE FEATURES

DEVICE COMPRISING NANOSTRUCTURES AND METHOD OF MANUFACTURING THEREOF

A method for manufacturing of a device (300, 410-412) comprising a substrate (201) comprising a plurality of sets of nanostructures (207) arranged on the substrate, wherein each of the sets of nanostructures is individually electrically addressable, the method comprising the steps of: providing (101) the substrate (200) having a first (202) face, the substrate having an insulating layer (210) comprising an insulating material arranged on the first face (202) of the substrate forming an interface (203) between the insulating layer and the substrate; providing (102) a plurality of stacks (204) on the substrate, the stacks being spaced apart from each other, wherein each stack comprises a first conductive layer (205) comprising a first conductive material and a second conductive layer (206) comprising a second conductive material different from the first material, the second conductive layer being arranged on the first conductive layer for catalyzing nanostructure growth; heating (103) the ...

Particle source and manufacturing method thereof

Particle source

ELECTRONIC GUN EMITTING UNDER HIGH VOLTAGE, INTENDS IN PARTICULAR FOR ELECTRONIC MICROSCOPY

Cette invention concerne un canon à électrons à émission de champ comportant une pointe d'émission d'électrons, une anode extractrice, ainsi que des moyens permettant de créer une différence de potentiel électrique entre la pointe d'émission et l'anode extractrice. La pointe d'émission comporte une pointe métallique et un cône d'extrémité obtenu par dépôt chimique en phase vapeur sur un nanofilament, le cône étant aligné et soudé sur la pointe métallique. Application à un microscope électronique en transmission. A field emission electron gun having an electron emission tip, an extractor anode, and means for creating an electrical potential difference between the transmitting tip and the extracting anode. The emission tip has a metal tip and an end cone obtained by chemical vapor deposition on a nanofilament, the cone being aligned and welded to the metal tip. Application to a transmission electron microscope.

SYSTEM AND a METHOD FOR LIMITING the EFFECTS Of ARCS IN MATRICES Of TRANSMITTERS OF FIELDS

Field emitter array for e.g. X-ray tube, has emitters emitting electrons when emission voltage is applied on grid and substrate layers, where grid layer has resistive layer with electrical resistance to locate effects of arc formation

Système et procédé pour limiter les effets de la formation d'arcs dans des matrices d'émetteurs d'électrons du type à émission de champ, améliorant la robustesse de ces matrices. Les matrices d'émetteurs d'électrons du type à émission de champ ont globalement un substrat (32), un isolant (34) et une électrode de grille (36). En incluant une substance résistive (38) dans la grille (36) de la matrice d'émetteurs, les phénomènes de formation d'arcs peuvent être isolés pour un seul émetteur de façon que les autres émetteurs d'une matrice puissent poursuivre l'émission (50) d'électrons et/ou pour que le courant de court-circuit de l'arc puisse être limité.

FIBER BASED FIELD EMITTER DISPLAY

A method of forming a field emission device and the resulting device including emitters formed of fiber segments. Tips are formed on the fiber segments that have a radius substantially small by exposing the tips to a reactive liquid for a duration of time. The tips are coated with a low work function conducting material to form emitters. © KIPO & WIPO 2007 ...

CONDUCTIVE NANO-STRUCTURE, A METHOD FOR MOLDING THE SAME AND A METHOD FOR MANUFACTURING AN ELECTRIC FILED EMITTING EMITTER USING THE SAME CAPABLE OF INCREASING THE PHYSICAL ADHESION WITH RESPECT TO A CONDUCTIVE SUBSTRATE

PURPOSE: A conductive nano-structure, a method for molding the same, and a method for manufacturing an electric field emitting emitter using the same are provided to precisely control the size and the shape of the conductive nano-structure based on an electric-discharge processing method under an atmospheric environment. CONSTITUTION: A conductive nano-structure aligned on a conductive substrate is formed(110). The conductive nano-structure is discharge-processed under an atmospheric environment(120). A method for manufacturing an electric field emitting emitter includes the following: The conductive nano-structure including carbon nano-tubes is formed and is arranged on a conductive tip. The conductive nano-structure is discharge-cut under the atmospheric environment. Contact resistance between the conductive tip and the conductive nano-structure is reduced. COPYRIGHT KIPO 2012 ...

ELECTRON EMITTER

Disclosed is an electron emitter having a structure for emitting electrons efficiently. The electron emitter comprises a substrate composed of an n-type diamond, and a sharp projection formed on the substrate. The projection is composed of a base portion on the substrate side and an electron-emitting portion which is formed on the base portion. Electrons are emitted from the tip of the electron-emitting portion. The base portion is composed of an n-type diamond, while the electron-emitting portion is composed of a p-type diamond. The length from the tip of the projection (the electron-emitting portion) to the interface between the base portion and the electron-emitting portion is preferably not more than 100 nm.

Composite for paste including carbon nanotubes, electron emitting device using the same, and manufacturing method thereof

Provided are a composite for paste including carbon nanotubes (CNTs), an electron emitting device using the same, and a manufacturing method thereof. The provided composite for paste includes 5 to 40 parts by weight of CNTs, 5 to 50 parts by weight of alkali metal silicate, and 1 to 20 parts by weight of a binder. The provided electron emitting device includes electron emitting tips, which are located on cathode electrodes in wells and formed of the composite for paste including 5 to 40 parts by weight of CNTs, 5 to 50 parts by weight of alkali metal silicate, and 1 to 20 parts by weight of a binder. The electron emitting device has excellent stability and durability and uniformly emits electrons from a large area, thereby improving the overall performance of an apparatus using the electron emitting device.

Nanoparticle-Templated Lithographic Patterning of Nanoscale Electronic Components

Some embodiments of vacuum electronics call for nanoscale field-enhancing geometries. Methods and apparatus for using nanoparticles to fabricate nanoscale field-enhancing geometries are described herein. Other embodiments of vacuum electronics call for methods of controlling spacing between a control grid and an electrode on a nano- or micron-scale, and such methods are described herein.

High-density field emission elements and a method for forming said emission elements

A method for forming high density emission elements and field emission displays formed according to the method. Oxygen and a silicon etchant are introduced into a plasma etching chamber containing a silicon substrate. The oxygen reacts with the silicon surface to form regions of silicon dioxide, while the silicon etchant etches the silicon to form the emission elements. The silicon dioxide regions mask the underlying silicon during the silicon etch process. High density and high aspect ratio emission elements are formed without using photolithographic processes. The emission elements formed according to the present invention provide a more uniform emission of electrons. Further, a display incorporating emission elements formed according to the present invention provides increased brightness. The reliability of the display is increased due to the use of a plurality of emission elements to supply electrons for stimulating the phosphor substrate material to produce the image.

Field emission display having reduced power requirements and method

A field emission display includes a substrate and a plurality of emitters formed on columns on the substrate. The display also includes a porous dielectric layer formed on the substrate and the columns. The porous dielectric layer has an opening formed about each of the emitters and has a thickness substantially equal to a height of the emitters above the substrate. The porous dielectric layer may be formed by oxidation of porous polycrystalline silicon. The display also includes an extraction grid formed substantially in a plane defined by respective tips of the plurality of emitters and having an opening surrounding each tip of a respective one of the emitters. The display further includes a cathodoluminescent-coated faceplate having a planar surface formed parallel to and near the plane of tips of the plurality of emitters. The porous dielectric layer results in columns having less capacitance compared to prior art displays. Accordingly, less electrical power is required to charge and ...

Diamond/carbon nanotube structures for efficient electron field emission

The present invention is directed to a nanotube coated with diamond or diamond-like carbon, a field emitter cathode comprising same, and a field emitter comprising the cathode. It is also directed to a method of preventing the evaporation of carbon from a field emitter comprising a cathode comprised of nanotubes by coating the nanotube with diamond or diamond-like carbon. In another aspect, the present invention is directed to a method of preventing the evaporation of carbon from an electron field emitter comprising a cathode comprised of nanotubes, which method comprises coating the nanotubes with diamond or diamond-like carbon.

Titanium silicide nitride emitters and method

A field emission display apparatus includes a plurality of emitters formed on a substrate. Each of the emitters includes a titanium silicide nitride outer layer so that the emitters are less susceptible to degradation. A dielectric layer is formed on the substrate and the emitters, and an opening is formed in the dielectric layer surrounding each of the emitters. A conductive extraction grid is formed on the dielectric layer substantially in a plane defined by the emitters, and includes an opening surrounding each of the emitters. A cathodoluminescent faceplate having a planar surface is disposed parallel to the substrate.

Electron emission element

An electron emission element according to the present invention comprises a substrate (11), and a plurality of protrusions (14) composed of diamond and protruding from the substrate. Each protrusion includes a columnar portion (12), the side face of which forms an inclination of approximately 90° relative to the surface of the substrate, and a tip portion (13), which is located on the columnar portion having a spicular end. A conductive layer (22c) is formed on the upper part of each columnar portion, and a cathode electrode film (15), which is electrically connected to the conductive layer, is formed on the side face of the columnar portion.

METHOD FOR MANUFACTURING NANOSTRUCTURES AND CATHODE FOR FIELD EMISSION LIGHTING ARRANGEMENT

Method for manufacturing carbon nanotubes with metal cores

СПОСОБ ИЗГОТОВЛЕНИЯ ЭМИТИРУЮЩЕГО ЭЛЕКТРОНЫ ПРИБОРА И СПОСОБ ИЗГОТОВЛЕНИЯ УСТРОЙСТВА ОТОБРАЖЕНИЯ ИЗОБРАЖЕНИЯ

Данное изобретение относится к способу изготовления эмитирующего электроны прибора, содержащего материал с низкой работой выхода, способу изготовления источника электронов и способу изготовления устройства отображения изображения. Технический результат - обеспечение возможности создания устройства, способного отображать изображение с малой флуктуацией яркости в течение длительного периода времени. Достигается тем, что предложен способ простого изготовления эмитирующего электроны прибора, покрытого материалом с низкой работой выхода, обладающим хорошими электронно-эмиссионными свойствами, с высокой воспроизводимостью, вследствие чего уменьшаются различия в электронно-эмиссионных свойствах между эмитирующими электроны приборами. Перед покрытием структуры материалом с низкой работой выхода на этой структуре формируют слой оксида металла. 3 н. и 12 з.п. ф-лы, 27 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2 430 446 (13) C2 (51) МПК H01J H01J 9/02 9/20 (2006.01) (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (21)(22) Заявка: 2009144566/07, 01.12.2009 (24) Дата начала отсчета срока действия патента: 01.12.2009 (72) Автор(ы): АОКИ Наофуми (JP), НИСИДА Содзи (JP) 2 4 3 0 4 4 6 (43) Дата публикации заявки: 10.06.2011 Бюл. № 16 (45) Опубликовано: 27.09.2011 Бюл. № 27 2 4 3 0 4 4 6 R U Адрес для переписки: 129090, Москва, ул.Б.Спасская, 25, стр.3, ООО "Юридическая фирма Городисский и Партнеры", пат.пов. А.В.Мицу, рег.№ 364 C 2 C 2 (56) Список документов, цитированных в отчете о поиске: JP 7-78553 А, 20.03.1995. US 4008412 А, 15.02.1977. RU 2159478 С2, 20.11.2000. RU 2007112860 А, 20.10.2008. SU 439028 А, 29.01.1975. SU 1069029 А, 23.01.1984. JP 2220337 А, 03.09.1990. JP 1-235124 А, 20.09.1989. (54) СПОСОБ ИЗГОТОВЛЕНИЯ ЭМИТИРУЮЩЕГО ЭЛЕКТРОНЫ ПРИБОРА И СПОСОБ ИЗГОТОВЛЕНИЯ УСТРОЙСТВА ОТОБРАЖЕНИЯ ИЗОБРАЖЕНИЯ (57) Реферат: Данное изобретение относится к способу изготовления эмитирующего электроны прибора, ...

STRUCTURES, ARRANGEMENTS AND DEVICES WITH VACUUM FIELD MISSION MICRO POINTS AND PROCEDURES FOR THEIR PRODUCTION

FIELD MISSION DEVICE

COLD FIELD EMITTER

FIBER BASED FIELD EMITTER DISPLAY

A method of forming a field emission device and the resulting device including emitters formed of fiber segments. Tips are formed on the fiber segments that have a radius substantially small by exposing the tips to a reactive liquid for a duration of time. The tips are coated with a low work function conducting material to form emitters.

DEVICES HAS EMISSION OF FIELD.

PROCECE OF MANUFACTURE OF CARBON NANOTUBES HAS METAL HEARTS

Field emission display comprising FEC matrices and conical emitters

Des fils de cathode 102 en forme de bande sont formés dans la zone cathodique 109 se trouvant sur un substrat de cathode 101. Des sections découpées 108 sont formées dans chacun des fils 102 et une électrode 107 en forme d'îlot est formée dans chaque section découpée 108. Une couche de résistance 103 est formée sur le fil de cathode 102, la section découpée (108) et l'électrode 107. Des cônes émetteurs (106) 106 sont formés sur la couche de résistance 103, de manière à former une matrice à émission de champ. La distance entre l'électrode 107 et le fil de cathode 102 est modifiée d'après sa position dans la zone cathodique 109, de manière à corriger toute déviation de la caractéristique d'émission d'après la position.

Microelectronic electron emitting device for direct write electron lithography device, has insulating layer with openings forming nano-sources to emit secondary electrons, where number of openings is less than that of micro electron sources

The device has a primary unit (115) comprising micro electron sources (101) formed on a substrate (100). A secondary unit (140) has an insulating layer situated opposite to the sources for collecting electrons emitted by the sources. The layer has openings (133), with diameter ranging from 1 to 50 nanometers, forming nano-sources for emitting the secondary electrons, where the number of openings is less than the number of sources. An independent claim is also included for a direct writ electron lithography apparatus comprising a microelectronic electron emitting device.

Manufacturing carbon nanotubes with metallic core of nanometric or micrometric dimensions, comprises supplying metallic fibers on a conductor substrate, and ionically implanting amorphous carbon on or under a surface of the metallic fiber

The process for manufacturing carbon nanotubes with metallic core of nanometric or micrometric dimensions, comprises supplying metallic fibers (3) on a conductor substrate (2), ionically implanting amorphous carbon on or under a surface of the metallic fiber, thermally treating the carbon in the supply zone thus continuously covering the metallic fiber using carbon sheets having symmetry sp2, and removing the residual amorphous carbon. The supply zone comprises the substrate and the metallic fibers. The substrate comprises a layer of metal catalyst in its surface. The process for manufacturing carbon nanotubes with metallic core of nanometric or micrometric dimensions, comprises supplying metallic fibers (3) on a conductor substrate (2), ionically implanting amorphous carbon on or under a surface of the metallic fiber, thermally treating the carbon in the supply zone thus continuously covering the metallic fiber using carbon sheets having symmetry sp2, and removing the residual amorphous carbon. The supply zone comprises the substrate and the metallic fibers. The substrate comprises a layer of metal catalyst in its surface. The metal catalyst and a solid solution are deposited in the surface of the supply zone before supplying the carbon. The carbon compound undergoes a catalytic decomposition during the thermal treatment. The fiber metal has a conductivity higher than a metal solution with carbon. Monopore or multipore (7) membranes are produced on the substrate. Electrolysis is carried out to grow each fiber in the membrane pores. A mask is produced in an electrically insulating membrane for localization or selection of pores of the membrane. The membrane is aluminum, and the pores are produced in the membrane by aluminum anodization.

FIELD EMISSION DISPLAY

FIELD EMISSION DEVICE

There is disclosed an improved field emission device (30) which finds use in display devices, such as a flat panel displays. Known devices and displays suffer from problems such as complexity of fabrication and limited colour gamut. The device (30) therefore provides a field emission backplate (38) which is made from a substantially semiconductor based material and comprises a plurality of grown tips (32), the device (30) further comprising at least one electro-luminescent and/or photo-luminescent material (34) having a fluorescent material chemically attached thereto, i.e. a fluorescent dye doped material.

METHOD FOR MAKING ELECTRON EMISSION APPARATUS

A method for making the electron emission apparatus is provided. In the method, an insulating substrate including a surface is provided. A number of grids are formed on the insulating substrate and defined by a plurality of electrodes. A number of conductive linear structures are fabricated and supported by the electrodes. The number of conductive linear structures are substantially parallel to the surface and each of the grids contains at least one of the conductive linear structures. The conductive linear structures are cut to form a number of electron emitters. Each of the electron emitters has two electron emission ends defining a gap therebetween.

Cold-cathode electron source, microwave tube using it, and production method thereof

An object of the present invention is to provide a cold-cathode electron source successfully achieving a high frequency and a high output, a microwave tube using it, and a production method thereof. In a cold-cathode electron source according to the present invention, emitters have a tip portion tapered at an aspect ratio R of not less than 4, and thus the capacitance between the emitters and a gate electrode is decreased by a degree of declination from the gate electrode. For this reason, the cold-cathode electron source is able to support an operation at a high frequency. A cathode material of the cold-cathode electron source is none of the conventional cathode materials such as tungsten and silicon, but is a diamond with a high melting point and a high thermal conductivity. For this reason, the emitters are unlikely to melt even at a high current density of an electric current flowing in the emitters, and thus the cold-cathode electron source is able to support an operation at a high ...

Doped field-emitter

A field-emission electron source element includes a cathode substrate, an insulating layer that is formed on the cathode substrate and has an opening, a lead electrode formed on the insulating layer, and an emitter formed in the opening. A surface layer of an electron emitting region of the emitter is doped with at least one reducing element selected from the group consisting of hydrogen and carbon monoxide. Further, an image display apparatus including the above-mentioned field-emission electron source element is provided. This makes it possible to obtain not only a stable field-emission electron source element that does not cause a current drop even after a high current density operation for a long time but also a high-performance image display apparatus that can maintain a stable display performance over a long period of time.

Field emission device and method for fabricating the same

A field emission device (FED) and a method for fabricating the FED are provided. The FED includes micro-tips with nano-sized surface features. Due to the micro-tips as a collection of a large number of nano-tips, the FED is operable at low gate turn-on voltages with high emission current densities, thereby lowering power consumption.

Field emission display device

A field emission display device (1) includes a cathode plate (20), a resistive buffer (30) in contact with the cathode plate, a plurality of electron emitters (40) formed on the buffer, and an anode plate (50) spaced from the electron emitters. Each electron emitter includes a rod-shaped first part (401) and a conical second part (402). The buffer and first parts are made from silicon nitride. The combined buffer and first parts has a gradient distribution of electrical resistivity such that highest electrical resistivity is nearest the cathode plate and lowest electrical resistivity is nearest the anode plate. The second parts are made from niobium. When emitting voltage is applied between the cathode and anode plates, electrons emitted from the electron emitters traverse an interspace region and are received by the anode plate. Because of the gradient distribution of electrical resistivity, only a very low emitting voltage is needed.

Cold field electron emitters based on silicon carbide structures

A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/m is demonstrated in a macroscopic emitter array. The emitter is comprised of a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.

Composite, ordered material having sharp surface features

A composite material having sharp surface features includes a recessive phase and a protrusive phase, the recessive phase having a higher susceptibility to a preselected etchant than the protrusive phase, the composite material having an etched surface wherein the protrusive phase protrudes from the surface to form a sharp surface feature. The sharp surface features can be coated to make the surface super-hydrophobic.

Emitter

Electron emitters and a method of fabricating emitters are disclosed, having a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitters and decreases toward the base of the emitters. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitters having impurity gradients.

Emission device and method for forming

An emission device includes a plurality of electron emitter structures (12) of varied geometry that have a conducting layer (22) deposited thereon. The conducting layer has openings (24) located at tunneling sites (18) for each of the electron emitter structures. The tunneling sites facilitate electron emissions from each of the varied geometry electron emitter structures upon voltage biasing of the conducting layer relative to the electron emitter structures.

Verfahren zum Herstellen eines Emitters

Verfahren zum Herstellen eines angespitzten, nadelförmigen Emitters, wobei das Verfahren umfasst:elektrolytisches Polieren eines End-Abschnittes von einem elektrisch leitfähigen Emitter-Material, derart, dass er in Richtung zu einem Spitzen-Abschnitt davon spitz zuläuft;Durchführen eines ersten Ätzens, bei welchem der elektrolytisch polierte Abschnitt des Emitter-Materials mit einem fokussierten Ionenstrahl derart bestrahlt wird, dass pyramidenförmige Flächen erstellt werden, um einen pyramidenförmigen, angespitzten Abschnitt auszubilden, welcher eine Spitze hat, welche den Spitzen-Abschnitt umfasst; undDurchführen eines zweiten Ätzens, bei welchem der Spitzen-Abschnitt des angespitzten Abschnitts durch feldunterstütztes Gas-Ätzen weiter angespitzt wird, während ein Kristall-Aufbau am Spitzen-Abschnitt des angespitzten Abschnitts durch ein Feld-Ionen-Mikroskop beobachtet wird, und die Anzahl von Atomen an einer Vorderkante des Spitzen-Abschnitts des angespitzten Abschnitts auf eine vorbestimmte ...

Verfahren zum Herstellen eines Emitters

Verfahren zum Herstellen eines angespitzten, nadelförmigen Emitters, wobei das Verfahren umfasst: elektrolytisches Polieren eines End-Abschnittes von einem elektrisch leitfähigen Emitter-Material, derart, dass er in Richtung zu einem Spitzen-Abschnitt davon spitz zuläuft; Durchführen eines ersten Ätzens, bei welchem der elektrolytisch polierte Abschnitt des Emitter-Materials mit einem Ladungspartikelstrahl bestrahlt wird, um einen pyramidenförmigen, angespitzten Abschnitt auszubilden, welcher eine Spitze hat, welche den Spitzen-Abschnitt umfasst; Durchführen eines zweiten Ätzens, bei welchem der Spitzen-Abschnitt durch feldunterstütztes Gas-Ätzen weiter angespitzt wird, während ein Kristall-Aufbau am Spitzen-Abschnitt durch ein Feld-Ionen-Mikroskop beobachtet wird, und die Anzahl von Atomen an einer Vorderkante des Spitzen-Abschnitts auf eine vorbestimmte Anzahl oder weniger beibehalten wird; und Erwärmen des Emitter-Materials, um die Atome an der Vorderkante des Spitzen-Abschnitts des ...

FIELD MISSION ARRANGEMENT AND PROCEDURE FOR YOUR PRODUCTION

MICROELECTRONIC DEVICE WITH REPEATED ELECTRON-BEAM EMISSION

场发射显示器件

... 一种场发射显示器件(1)依次包括一阴极板(20)、一电阻缓冲层(30)、多个电子发射体(40)及一阳极板(50)，该阳极板(50)与电子发射体(40)之间有一定空隙区域，电阻缓冲层与电子发射体均含有碳材料，且每一电子发射体均为纳米棒。组合电阻缓冲层与电子发射体的电阻系数呈现渐变分布，邻近阴极板的电阻系数最高，而邻近阳极板的电阻系数最小。当在阴极板与阳极板之间施加发射电压，电子发射体发射电子，发射的电子穿过空隙区域后由阳极板接收。由于电阻系数的渐变分布，因此只需要较低的发射电压。 ...

Conductive nanostructure and method of forming thereof and method of manufacturing field emission emitter using the same

일 실시 예에 있어서, 전도성 나노구조물의 성형 방법을 제공한다. 상기 전도성 나노구조물의 성형 방법은 전도성 기판 상에 배열되는 전도성 나노구조물을 형성하는 과정 및 상기 전도성 나노구조물을 대기 환경 중에서 방전 가공하는 과정을 포함한다.

Device comprising nanostructures and method of manufacturing thereof

디바이스(300, 410 내지 412)를 제조하는 방법으로서, 상기 디바이스는 기판 상에 배치된 복수의 나노구조(nanostructure)들의 세트들(207)로 구성된 상기 기판(201)을 포함하고, 여기서 상기 나노구조들의 세트들의 각각은 개별적이게 전기적으로 어드레싱가능하며, 상기 방법은, 제1 면(face)(202)을 가진 기판(200)을 제공하는 단계(101)와, 상기 기판은 절연층과 상기 기판 사이의 인터페이스(203)를 형성하는, 상기 기판의 상기 제1 면(202) 상에 배치된 절연 물질을 포함하는 상기 절연층(210)을 가지고; 상기 기판 상에 복수의 스택(stack)들(204)을 제공하는 단계와, 상기 스택들은 서로로부터 떨어져 간격화되어 있고, 여기서 각각의 스택은 제1 전도성 물질(conductive material)로 구성된 제1 전도층(205) 및 상기 제1 전도성 물질과 다른 제2 전도성 물질로 구성된 제2 전도층(206)을 포함하고, 상기 제2 전도층은 나노구조의 성장을 촉진(catalyzing)시키기 위해 상기 제1 전도층 상에 배치되며; 상기 제2 전도성 물질 상에서 나노구조들을 형성할 수 있도록 환원 분위기(reducing atmosphere)에서 상기 제1 기판 상에 배치된 상기 복수의 스택들을 가지는 상기 기판을 가열하는 단계(103)와; 상기 나노구조들(207)이 상기 제2층(206) 상에 형성되도록 하는 분위기에서 상기 기판 상에 배치된 상기 복수의 스택들(204)을 가진 상기 기판을 가열하는 단계(103)를 포함하며, 상기 절연 물질 및 상기 제1 전도성 물질은, 상기 가열하는 단계들 동안 상기 제1 전도성 물질이 상기 스택들(204)의 각각의 아래의 상기 절연층(201) 내에 전기적으로 전도성인 부분(208)을 형성하기 위해 상기 절연 물질과 상호작용하도록 선택되고, 상기 전기적으로 전도성인 부분은 상기 제1 전도성 물질 및 상기 절연 물질의 혼합물(mixture) 및/또는 상기 제1 전도성 물질 및 상기 절연 물질의 반응 부가물(adduct)들을 포함한다. A method of fabricating a device (300, 410-412), the device comprising a substrate (201) comprising a plurality of sets of nanostructures (207) disposed on a substrate, wherein the nanostructures Each of the sets of electrodes being individually addressable, the method comprising the steps of: providing a substrate (200) having a first face (202), the substrate comprising an insulating layer (210) comprising an insulating material disposed on the first side (202) of the substrate, forming an interface (203) of the insulating layer (210); Providing a plurality of stacks (204) on the substrate, the stacks being spaced apart from one another, wherein each stack comprises a first conductive layer (205) and a second conductive layer (206) comprised of a second conductive material different from the first conductive material, the second conductive layer comprising a first conductive layer Lt; / RTI > Heating (103) the substrate having the plurality of stacks ...

FIBROUS SOLID CARBON MANIFOLD ASSEMBLY AND METHOD FOR PRODUCING THE SAME

MICROELECTRONIC MULTIPLE ELECTRON BEAM EMITTING DEVICE

The invention relates to an electronic multiple electron beam emitting device comprising a first structure (115) that has a number of electron beam emitting microsources, a second structure (140) facing the first structure and having means for collecting electrons emitted by the first structure and for carrying out a secondary emission following this collection. The invention is for use, in particular, in the area of direct-writing lithography.

IMPROVED DISPLAY PANEL APPARATUS AND METHOD

A panel display using gold as a conductive element and a matrix of carbon fibers as emitters is presented. The invention provides a novel defined pixel width of three emitter fibers per cell wherein each cell is positioned within three emulsion layers of suspended nano-crystals stack positioned vertically atop one-another. Each of these respective layers is excited by a single carbon fiber. In the preferred embodiment, fiber length ends from each cell are positioned at the mid-point of each respective polymer layer thickness and produce one of red, green, or blue colors required to complete the image formation.

DIAMOND/CARBON NANOTUBE STRUCTURES FOR EFFICIENT ELECTRON FIELD EMISSION

The present invention is directed to a nanotube coated with diamond or diamond-like carbon, a field emitter cathode comprising same, and a field emitter comprising the cathode. It is also directed to a method of preventing the evaporation of carbon from a field emitter comprising a cathode comprised of nanotubes by coating the nanotube with diamond or diamond-like carbon. In another aspect, the present invention is directed to a method of preventing the evaporation of carbon from an electron field emitter comprising a cathode comprised of nanotubes, which method comprises coating the nanotubes with diamond or diamond-like carbon.

Field emission display device

A field emission display device (1) includes a cathode plate (20), a resistive buffer (30) in contact with the cathode plate, a plurality of electron emitters (40) formed on the buffer, and an anode plate (50) spaced from the electron emitters. Each electron emitter includes a nano-rod first part (401) and a conical second part (402). The buffer and the nano-rods are made from silicon carbide (SiCX). The combined buffer and nano-rods has a gradient distribution of electrical resistivity such that highest electrical resistivity is nearest the cathode plate and lowest electrical resistivity is nearest-the anode plate. The conical parts are made from molybdenum. When emitting voltage is applied between the cathode and anode plates, electrons emitted from the electron emitters traverse the interspace region and are received by the anode plate. Because of the gradient distribution of electrical resistivity, only a very low emitting voltage is needed.

Electron emission element and electron emission element fabrication method

An electron emitting device 2 comprises an electron emitting portion 6 made of diamond. At an electron emission current value of 10 A or more, a deviation of the electron emission current value over one hour is within ±20% in the electron emitting device 2. The number of occurrence of step-like noise changing the electron emission current value stepwise is once or less per 10 minutes.

Field emission tips and methods for fabricating the same

A method for fabricating field emitters from a conductive or semiconductive substrate. A layer of low work function material may be formed on the substrate. Emission tips that include such a low work function material may have improved performance. An etch mask appropriate for forming emission tips is patterned at desired locations over the substrate and any low work function material thereover. An anisotropic etch of at least the substrate is conducted to form vertical columns therefrom. A sacrificial layer may then be formed over the vertical columns. A facet etch of each vertical column forms an emission tip of the desired shape. If a sacrificial layer was formed over the vertical columns prior to formation of emission tips therefrom, the remaining material of the sacrificial layer may be utilized to facilitate the removal of any redeposition materials formed during the facet etch.

Silicon electron emitter designs

Electron source designs are disclosed. The emitter structure, which may be silicon, has a layer on it. The layer may be graphene or a photoemissive material, such as an alkali halide. An additional layer between the emitter structure and the layer or a protective layer on the layer can be included. Methods of operation and methods of manufacturing also are disclosed.

PROCESS FOR PRODUCING DIAMOND ELECTRON EMISSION ELEMENT AND ELECTRON EMISSION ELEMENT

A method for production includes a step for forming concaved molds on a surface of a substrate and a step for growing a diamond heteroepitaxially on the substrate in an atmosphere containing a doping material. It is preferable that the crystal structure of the slope of the concaved molds of the substrate has the cubic system crystal orientation (111), and the doping material is phosphorous. Further, it is preferable that the substrate is Si, and the slope of the molds is the Si(111) face. The diamond electron emission device of the present invention contains projection parts on the surface thereof, wherein a slope of the projection parts 1 contains a diamond (111) face, and flat parts 2, which are not the projection parts, contain face orientations other than (100) face or (110) face and grain boundaries.

Integrierte vakuum-mikroelektronische Vorrichtung und Verfahren zum Herstellen derselben

Es wird eine integrierte vakuum-mikroelektronische Vorrichtung (1, 100, 101) beschrieben, die Folgendes aufweist: ein stark dotiertes Halbleitersubstrat (11), mindestens eine Isolierschicht (12, 93, 95), die über dem dotierten Halbleitersubstrat (11) angeordnet ist, einen Vakuumgraben (19), der innerhalb der mindestens einen Isolierschicht (12, 32) gebildet ist und sich bis zu dem stark dotierten Halbleitersubstrat (11, 31) erstreckt, eine erste Metallschicht (42), die als Kathode wirkt, eine zweite Metallschicht (22), die unter dem stark dotierten Halbleitersubstrat (11) angeordnet ist und als Anode wirkt. Die erste Metallschicht (42) ist benachbart dem oberen Rand (40) des Vakuumgrabens (19) angeordnet, und der Vakuumgraben (19) weist eine derartige Breitenabmessung (W) auf, dass die erste Metallschicht (42) über dem Vakuumgraben (19) getragen bleibt.

Gated nanorod field emitter structures and associated methods of fabrication

Gated nanorod field emitter structures and associated methods of fabrication

Field emitter devices incorporating an improved ballast resistor

Fibrous solid carbon manifold assembly and method for producing the same

Device comprising nanostructures and method of manufacturing thereof

A method for manufacturing of a device (300, 410-412) comprising a substrate (201) comprising a plurality of sets of nanostructures (207) arranged on the substrate, wherein each of the sets of nanostructures is individually electrically addressable, the method comprising the steps of: providing (101) the substrate (200) having a first (202) face, the substrate having an insulating layer (210) comprising an insulating material arranged on the first face (202) of the substrate forming an interface (203) between the insulating layer and the substrate; providing (102) a plurality of stacks (204) on the substrate, the stacks being spaced apart from each other, wherein each stack comprises a first conductive layer (205) comprising a first conductive material and a second conductive layer (206) comprising a second conductive material different from the first material, the second conductive layer being arranged on the first conductive layer for catalyzing nanostructure growth; heating (103) the ...

ELECTRON EMISSION ELEMENT AND ELECTRON EMISSION ELEMENT FABRICATION METHOD

Fibrous solid carbon complex and its prepn. method

DISPLAY DEVICE HAS EMISSION OF FIELD

Fiber based field emitter display

A method of forming a field emission device and the resulting device including emitters formed of fiber segments. Tips are formed on the fiber segments that have a radius substantially small by exposing the tips to a reactive liquid for a duration of time the tips are coated with a low work function conduction material to form emitters.

MANUFACTURING METHOD OF ELECTRON SOURCE

An electron gun with a truncated-cone-shaped cathode with uniform emission current density is efficiently manufactured. A manufacturing method of a cathode electron gun equipped with a supply source for diffusing oxide of a metal element on a single crystal needle of tungsten or molybdenum includes steps of forming a truncated-cone-shape having a flat plane at a single crystal edge serving as the cathode by machining beforehand, thereafter thinning and removing a front layer of the flat plane by a focused gallium ion beam, and re-flattening it.

ELECTRON EMITTER AND METHOD FOR FABRICATING THE SAME, COLD CATHODE FIELD ELECTRON EMISSION ELEMENT AND METHOD FOR FABRICATING THE SAME, AND COLD CATHODE FIELD ELECTRON EMISSION DISPLAY AND METHOD FOR MANUFACTURING THE SAME

A cold cathode field electron emission element comprising a cathode electrode (11) provided on a support (10), an insulation layer (12) formed on the support (10) and the cathode electrode (11), a gate electrode (13) formed on the insulation layer (12), apertures (14A, 14B) made in the gate electrode (13) and the insulation layer (12), and an electron emitting part (15) formed on that part of the cathode electrode (11) located on the bottom part of the aperture (14B), wherein the electron emitting part (15) comprises a matrix (21) and a carbon nanotube structure (20) buried in the matrix (21) while projecting the forward end part.

FIELD EMISSION DEVICE AND A METHOD OF FORMING SUCH A DEVICE

A field emission device (1) may be used for emitting electrons in, for example, a field emission display (FED). Field emission tips (40) are used for the emitting of electrons in the field emission device (1). In operation of the field emission device (1) a voltage is applied between a first electrode (4) having electrical contact with the field emission tip (40) and a second electrode (34) to make the field emission tip (40) emit electrons. To form a field emission tip (40) a layer of liquid material is applied on a substrate (2) provided with the first electrode (4). The layer of liquid material is embossed with a patterned stamp and subsequently cured to form a field emission tip structure (20). A conductive film (38) is applied on the field emission tip structure (20) to form a field emission tip (40) that has electrical contact with the first electrode (4).

DEVICES FOR GUIDING AND MANIPULATING ELECTRON BEAMS

A device for guiding a charged particle beam comprising a first superconducting nanochannel. In one embodiment, the device comprises a superconducting nano-channel consisting essentially of a superconducting material in the form of a tube having a proximal end, a distal end, and a bend disposed between said proximal end and said distal end. In another embodiment, the device is formed by a substrate, a first area of superconducting material coated on the substrate and having a first edge, a second area of superconducting material coated on the substrate and having a second edge, the first edge of the first area of superconducting material and the second edge of the second area of superconducting material are substantially parallel. In another embodiment, the device comprises a superconducting nano-channel formed by a plurality of nano-scale superconducting rods disposed around a central region.

ELEMENTARY ELEMENT

The present invention designs an elementary element which operates by low-energy particles less susceptible to influence on an S/N ratio by the particles pseudo-one-dimensionally conducting throw a particle movement portion of particles including electromagnetic waves, electrons, holes, atoms, and molecules between emission and absorption sources of the particles. The present invention designs an elementary element which comprises a modification portion for allowing the particle movement portion coming and going of particles between another elementary element and the elementary element, an interaction, a chemical reaction, and the like between these particles, and time dependent mechanical/electromagnetic force, and controls the emission/absorption of low-energy particles less susceptible to the influence of atomic/molecular species of a constituent material of the particle movement portion, the stereo structure or lattice thereof, the disorders thereof, or the heat of the elementary element ...

Field emission tips and methods for fabricating the same

A method for fabricating field emitters from a conductive or semiconductive substrate. A layer of low work function material may be formed on the substrate. Emission tips that include such a low work function material may have improved performance. An etch mask appropriate for forming emission tips is patterned at desired locations over the substrate and any low work function material thereover. An anisotropic etch of at least the substrate is conducted to form vertical columns therefrom. A sacrificial layer may then be formed over the vertical columns. A facet etch of each vertical column forms an emission tip of the desired shape. If a sacrificial layer was formed over the vertical columns prior to formation of emission tips therefrom, the remaining material of the sacrificial layer may be utilized to facilitate the removal of any redeposition materials formed during the facet etch.

Process for producing diamond electron emission element and electron emission element

A method for production includes a step for forming concaved molds on a surface of a substrate and a step for growing a diamond heteroepitaxially on the substrate in an atmosphere containing a doping material. The crystal structure of the slope of the concaved molds of the substrate can have the cubic system crystal orientation (111), and the doping material is phosphorous. Further, the substrate is Si, and the slope of the molds can be the Si (111) face. The diamond electron emission device contains projection parts on the surface thereof, where a slope of the projection parts 1 contains a diamond (111) face, and flat parts 2, which are not the projection parts, contain face orientations other than (100) face or (110) face and grain boundaries.

Field emission tips, arrays, and devices

A method for fabricating field emitters from a conductive or semiconductive substrate. A layer of low work function material may be formed on the substrate. Emission tips that include such a low work function material may have improved performance. An etch mask appropriate for forming emission tips is patterned at desired locations over the substrate and any low work function material thereover. An anisotropic etch of at least the substrate is conducted to form vertical columns therefrom. A sacrificial layer may then be formed over the vertical columns. A facet etch of each vertical column forms an emission tip of the desired shape. If a sacrificial layer was formed over the vertical columns prior to formation of emission tips therefrom, the remaining material of the sacrificial layer may be utilized to facilitate the removal of any redeposition materials formed during the facet etch.

Method of making micro-field emitter device for flat panel display

A device and method for forming a device including electron emitters. The method includes exposing a first face of a sheet of bundled fiber segments to a reactive liquid to allow first ends of the fiber segments to react with the reactive liquid to remove material therefrom. A coating material is deposited on the first face which has the material removed. The method also includes exposing a second face of the sheet of bundled fiber segments to a reactive liquid to allow second ends of the fiber segments to react with the reactive liquid to remove material therefrom to expose the coating material.

Matrix-type cold-cathode electron source device

A matrix-type cold-cathode electron source device includes: an emitter array (3b) in which a plurality of emitters are arranged, and a gate electrode (5) opposed to the emitter array (3b). The gate electrode (5) includes: an emitter area gate electrode (5c) opposed to the emitter array (3b); a gate address electrode (5a) connecting the emitter area gate electrode (5c) to a gate signal wire (8a); and a high-resistance area (5b) disposed between the gate address electrode (5a) and the emitter area gate electrode (5c).

Structure and method to enhance field emission in field emitter device

A structure and method are provided to inhibit degradation to the electron beam of a field emitter device by coating the field emitter tip with a substance or a compound. The substance or compound acts in the presence of outgassing to inhibit such degradation. In one embodiment, the substance or compound coating the field emitter tip is stable in the presence of outgassing. In another embodiment, the substance or compound decomposes at least one matter in the outgassing. In yet another embodiment, the substance or compound neutralizes at least one matter in the outgassing. In a further embodiment, the substance or compound brings about a catalysis in the presence of outgassing.

Electrical circuit breaker

An electron emission element according to the present invention comprises a substrate (11), and a plurality of protrusions (14) composed of diamond and protruding from the substrate. Each protrusion includes a columnar portion (12), the side face of which forms an inclination of approximately 90° relative to the surface of the substrate, and a tip portion (13), which is located on the columnar portion having a spicular end. A conductive layer (22c) is formed on the upper part of each columnar portion, and a cathode electrode film (15), which is electrically connected to the conductive layer, is formed on the side face of the columnar portion.

ELECTRON EMISSION ELEMENT AND ELECTRON EMISSION ELEMENT FABRICATION METHOD

An electron emitting device 2 comprises an electron emitting portion 6 made of diamond. At an electron emission current value of 10 µA or more, a deviation of the electron emission current value over one hour is within ±20% in the electron emitting device 2. The number of occurrence of step-like noise changing the electron emission current value stepwise is once or less per 10 minutes.

Electron emission device

ЭМИТИРУЮЩЕЕ ЭЛЕКТРОНЫ УСТРОЙСТВО И ПАНЕЛЬ ОТОБРАЖЕНИЯ, ВКЛЮЧАЮЩАЯ В СЕБЯ ТАКОЕ УСТРОЙСТВО

FIELD: electricity. SUBSTANCE: electron-emitting device is proposed, which comprises an electroconductive element and a layer of lanthanum boride on the electroconductive element, and also includes a layer of oxide between the electroconductive element and the layer of lanthanum boride. The lanthanum oxide may contain lanthanum. The layer of lanthanum boride may be coated with a layer of lanthanum oxide. EFFECT: provision of bright high-quality image with insignificant variations of brightness for a longer period of time. 23 cl, 20 dwg, 7 ex РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2 432 636 (13) C2 (51) МПК H01J 19/068 (2006.01) H01J 19/066 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (21)(22) Заявка: 2009144567/07, 01.12.2009 (24) Дата начала отсчета срока действия патента: 01.12.2009 (72) Автор(ы): АОКИ Наофуми (JP), НИСИДА Содзи (JP) 2 4 3 2 6 3 6 (43) Дата публикации заявки: 10.06.2011 Бюл. № 16 (45) Опубликовано: 27.10.2011 Бюл. № 30 2 4 3 2 6 3 6 R U Адрес для переписки: 129090, Москва, ул.Б.Спасская, 25, стр.3, ООО "Юридическая фирма Городисский и Партнеры", пат.пов. А.В.Мицу, рег.№ 364 C 2 C 2 (56) Список документов, цитированных в отчете о поиске: JP 3-405773 В2, 12.05.2003. RU 2052855 С1, 20.01.1996. RU 2314592 С1, 10.01.2008. RU 2149478 С1, 20.05.2000. JP 2000-123711 А, 28.04.2000. US 4008412 А, 15.02.1977. (54) ЭМИТИРУЮЩЕЕ ЭЛЕКТРОНЫ УСТРОЙСТВО И ПАНЕЛЬ ОТОБРАЖЕНИЯ, ВКЛЮЧАЮЩАЯ В СЕБЯ ТАКОЕ УСТРОЙСТВО (57) Реферат: Данное изобретение относится к эмитирующему электроны устройству, имеющему слой борида лантана, и к панели отображения. Технический результат обеспечение яркого высококачественного изображения с малыми изменениями яркости в течение более длительного периода времени. Достигается тем, что предложено эмитирующее электроны устройство, которое включает в себя электропроводный элемент и слой борида лантана на электропроводном элементе, а также включает в себя слой оксида между ...

Field emission device

A field emission device suitable for use in flat panel displays comprises a semiconductor backplate 108 having a plurality of grown microtips 102. The emission layer includes electroluminescent and/or photoluminescent material having a fluorescent material, for example a fluorescent dye chemically attached as a side group onto the polymer or incorporated in the main chain backbone. A series of polymers or copolymers doped with dyes and suitable for emitting RGB colours is given. Embodiments are described where the emitting material is formed from spheres of a first polymer material doped with dye molecules (fig 11 a) and embedded within a second polymer material, and from a polymer dispersed liquid crystal film (fig 12a).

Field emission type cold cathode structure and electron gun using the cold cathode

Improved field emission device

Gated nanorod field emitter structures and associated methods of fabrication

Field emission device and manufacture method thereof

HIGH-DENSITY FIELD EMISSION ELEMENT AND METHOD FOR FORMING FIELD EMISSION ELEMENT WITHOUT USING PHOTOLITHOGRAPHIC PROCESS

PURPOSE: A high-density field emission element and a method for forming the field emission element are provided to enhance operation reliability of a display device by manufacturing the field emission element without using a photolithographic process. CONSTITUTION: A barrier layer(80), an aluminum layer(82) and a patterned photoresist layer are laminated on a dioxide silicon layer. A first aperture(89) is formed on the aluminum layer by using an etching reaction process. A second aperture(90) exposes a field emission element. The second aperture is formed to reach a silicon layer(52) of the field emission element(10) by using an isotropy etching. A silicon-selective dry anisotropy etching process is performed, such that an additional remainder is removed from a dioxide silicon layer(66). The second aperture is formed in a material layer and the dioxide silicon layer. After the second aperture is formed, plural field emission elements are formed on the respective second apertures. © KIPO ...

FIELD EMISSION DEVICE

The invention relates to a field emission device comprising a cathode (22, 30), a porous insulating layer (29, 36) whose pores contain electron emitters, and a conductive layer (28, 38, 48) in the form of a grid layer.

ELECTRON EMISSION APPARATUS AND METHOD FOR MAKING THE SAME

An electron emission apparatus includes an insulating substrate, one or more grids located on the substrate, wherein the one or more grids includes: a first, second, third and fourth electrode that are located on the periphery of the grid, wherein the first and the second electrode are parallel to each other, and the third and fourth electrodes are parallel to each other; and one or more electron emission units located on the substrate. Each the electron unit includes at least one electron emitter, the electron emitter includes a first end, a second end and a gap; wherein the first end is electrically connected to one of the plurality of the first electrodes and the second end is electrically connected to one of the plurality of the third electrodes; two electron emission ends are located in the gap, and each electron emission end includes a plurality of electron emission tips.

Electron emitter and method for fabricating the same, cold cathode field electron emission element and method for fabricating the same, and cold cathode field electron emission display and method for manufacturing the same

A cold cathode field emission device comprises; a cathode electrode 11 formed on a supporting member 10, an insulating layer 12 formed on the supporting member 10 and the cathode electrode 11, a gate electrode 13 formed on the insulating layer 12, an opening portion 14A, 14B formed through the gate electrode 13 and the insulating layer 12, and an electron emitting portion 15 formed on the portion of the cathode electrode 11 positioned in the bottom portion of the opening portion 14B, and said electron emitting portion 15 comprises a matrix, 21 and carbon nanotube structures 20 embedded in the matrix 21 in a state where the top portion of each carbon nanotube structure is projected.

Carbon nanotube array and field emission device using same

A field emission device includes a substrate ( 11 ) and a carbon nanotube array ( 12 ) formed thereon. Carbon nanotubes ( 120 ) of the carbon nanotube array are parallel to each other and cooperatively form a plurality of substantially rod-shaped lower portions ( 121, 121 ') and a plurality of corresponding tapered tips ( 122, 122 ') above the lower portions. Each lower portion and tapered tips have a plurality of carbon nanotubes. Distances between adjacent tips are approximately uniform, and are more than one micrometer. Preferably, the distance is in the range from 1 to 30 micrometers. The field emission device with this structure has reduced shielding between adjacent carbon nanotubes and has decreased threshold voltage required for field emission by the carbon nanotubes. The field emission device also contributes to an improved field emission concentration and efficiency.

Field emission cathode

The present invention relates to afield emission cathode, comprising an at least partly electrically conductive base structure, and a plurality of electrically conductive micrometer sized sections spatially distributed at the base structure, wherein at least a portion of the plurality of micrometer sized sections each are provided with a plurality of electrically conductive nanostructures. Advantages of the invention include lower power consumption as well as an increase in light output of e.g. a field emission lighting arrangement comprising the field emission cathode.

Electron-source rod, electron source and electronic device

An electron source is provided that operates at lower temperature and has a low work function and a narrower energy width. The electron source includes a porcelain insulator, two conductive terminals connected to the porcelain insulator, a filament formed between the conductive terminals, and a <100> orientation single crystal rod of at least one metal selected from the group consisting of tungsten, molybdenum, tantalum and rhenium connected to the filament. The rod has an electron-emitting face formed in at its tip region with its {100} crystal face exposed. The rod further includes a diffusion source in its central region that is made of a composite oxide formed from barium oxide and scandium oxide wherein the proportion of barium oxide being 50 mol % or more of BaO and the proportion of scandium oxide being 10 to 50 mol % as Sc 2 O 3 when the mixed oxide is prepared.

Particle sources and methods for manufacturing the same

The present disclosure provides a method for manufacturing a particle source, comprising: placing a metal wire in vacuum, introducing active gas and catalyst gas, adjusting a temperature of the metal wire, and applying a positive high voltage V to the metal wire to dissociate the active gas at the surface of the metal wire, in order to generate at a peripheral surface of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the top of the metal wire head to be greater than the to evaporation field of the material for the metal wire, so that metal atoms at the wire apex are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.

GAS FIELD ION SOURCE AND METHOD FOR USING SAME, ION BEAM DEVICE, AND EMITTER TIP AND METHOD FOR MANUFACTURING SAME

To provide a gas field ion source having a high angular current density, the gas field ion source is configured such that at least a base body of an emitter tip configuring the gas field ion source is a single crystal metal, such that the apex of the emitter tip is formed into a pyramid shape or a cone shape having a single atom at the top, and such that the extraction voltage in the case of ionizing helium gas by the single atom is set to 10 kV or more. 1. A gas field ion source comprising:an emitter tip configured to have a conductive needle-like tip and held in vacuum;an extraction electrode configured to have an opening at a position separated from the emitter tip in the tip direction of the emitter tip;a gas supply pipe configured to supply gas to the vicinity of the apex of the emitter tip; andan extraction voltage application means configured to apply an extraction voltage between the emitter tip and the extraction electrode, so as to form an electric field for ionizing the gas, wherein:at least the base body of the emitter tip is a single crystal metal, andthe apex of the emitter tip has a pyramid shape or a cone shape having a single atom at the top, and satisfies one of the following conditions:(A) the threshold value voltage at which the single atom is field-evaporated is 11 kV or more;(B) the extraction voltage of an ion beam from the single atom in the case of ionizing helium gas is 10 kV or more; and(C) the emission half-opening angle of the ion beam from the single atom in the case of ionizing helium gas is 0.7° or less.2. The gas field ion source according to claim 1 , wherein:the single crystal, which is at least the base body of the emitter tip, is tungsten, and the [111] crystal orientation of the tungsten is aligned in the longitudinal direction of the emitter tip.3. The gas field ion source according to claim 1 , wherein:the surface of the apex of the emitter tip is coated with a noble metal.4. The gas field ion source according to claim 1 , ...

Fabrication of super ion - electron source and nanoprobe by local electron bombardment

Method of fabricating super nano ion-electron source including: placing an assembly of precursor tip and metal ring around the precursor tip below the apex in a FIM chamber; applying dc current from grounded source to the metal ring to heat the ring; gradually applying high voltage to the precursor tip; wherein the metal ring is exposed to a high electric field from the tip, generating Schottky field emission of electrons from the metal ring, the applied electrical field sufficient to cause electrons to be extracted from the metal ring and accelerated to the shank with energy sufficient to dislodge atoms from the shank; and monitoring the evolution of the tip apex due to movement of dislodged atoms from the shank to the apex while adjusting the electrical field, the current or temperature of the metal ring until the apex forms a sharp nanotip with an atomic scale apex.

Conductive nanostructure, method for molding same, and method for manufacturing a field emitter using same

The present invention relates to a conductive nanostructure, a method for molding the same, and a method for manufacturing a field emitter using the same. More particularly, the present invention relates to a field-emitting nanostructure comprising a conductive substrate, a conductive nanostructure arranged on the conductive substrate, and a conductive interfacial compound disposed in the interface between the conductive substrate and the conductive nanostructure, as well as to a method for molding the same, and a method for manufacturing a field emitter using the same.

Field emission cathode

The present invention relates to afield emission cathode, comprising an at least partly electrically conductive base structure, and a plurality of electrically conductive micrometer sized sections spatially distributed at the base structure, wherein at least a portion of the plurality of micrometer sized sections each are provided with a plurality of electrically conductive nanostructures. Advantages of the invention include lower power consumption as well as an increase in light output of e.g. a field emission lighting arrangement comprising the field emission cathode.

Carbon nanotube field emission device with overhanging gate

A carbon nanotube field emission device with overhanging gate fabricated by a double silicon-on-insulator process. Other embodiments are described and claimed.

HIGH BRIGHTNESS BORON-CONTAINING ELECTRON BEAM EMITTERS FOR USE IN A VACUUM ENVIRONMENT

An emitter containing a metal boride material has an at least partly rounded tip with a radius of 1 μm or less. An electric field can be applied to the emitter and an electron beam is generated from the emitter. To form the emitter, material is removed from a single crystal rod to form an emitter containing a metal boride material having a rounded tip with a radius of 1 μm or less. 1. An apparatus comprising:an emitter containing a metal boride material, wherein the emitter includes a frustoconical section with an at least partly rounded tip that is in the shape of a truncated sphere, and wherein the at least partly rounded tip has a radius to a curved outer surface of 1 μm or less.2. The apparatus of claim 1 , wherein the metal boride material includes a species selected from the list consisting of an alkali metal claim 1 , an alkaline earth metal claim 1 , a transition metal claim 1 , a lanthanide claim 1 , and an actinide.3. The apparatus of claim 1 , wherein the metal boride material is a metal hexaboride material.4. The apparatus of claim 1 , wherein the metal boride material includes LaB.5. The apparatus of claim 1 , wherein the emitter has an emitting area of less than 1 mm.6. The apparatus of claim 1 , wherein the metal boride material has a <100> crystal orientation.7. The apparatus of claim 1 , wherein the radius is 700 nm or less.8. The apparatus of claim 1 , wherein the radius is 450 nm or less.9. The apparatus of claim 1 , wherein the radius is 100 nm or less.10. The apparatus of claim 1 , wherein the at least partly rounded tip includes a flat emitting facet.11. The apparatus of claim 1 , wherein the emitter has an emitting area less than 1 μm.12. A method comprising:providing an emitter containing a metal boride material, wherein the emitter includes a frustoconical section with an at least partly rounded tip that is in the shape of a truncated sphere, and wherein the at least partly rounded tip has a radius to a curved outer surface of 1 μm or less; ...

PASSIVE AND ACTIVE DIAMOND-BASED ELECTRON EMITTERS AND IONIZERS

A triple-point cathode coating and method wherein electrically conductive NEA diamond particles cast or mixed with the adhesive medium and electrically insulative NEA diamond particles are cast or mixed with the adhesive medium to form a plurality of exposed junctions between electrically conductive diamond particles and electrically insulative diamond particles to reduce any electrical charges on a structure coated with the coating. 1. A triple-point cathode coating comprising:an electrically conductive adhesive medium;electrically conductive NEA diamond particles cast or mixed with the adhesive medium;electrically insulative NEA diamond particles cast or mixed with the adhesive medium; anda plurality of exposed junctions between electrically conductive diamond particles and electrically insulative diamond particles to reduce any electrical charges on a structure coated with the coating.2. The coating of in which the electrically conductive NEA diamond particles contact electrically insulative NEA diamond particles at locations not submerged in the adhesive medium.3. The coating of in which the electrically conductive NEA diamond particles and the electrically insulative particles have a grit size of between 0.5 microns to 150 microns.4. The coating of in which the electrically conductive NEA diamond particles and the electrically insulative diamond particles are mixed together before casting or mixing them with the adhesive medium.5. The coating of in which the adhesive medium includes silver.6. An ionizer comprising:a substrate; an electrically conductive adhesive medium,', 'electrically conductive NEA diamond particles cast or mixed with the adhesive medium,', 'electrically insulative NEA diamond particles cast or mixed with the adhesive medium, and', 'a plurality of exposed junctions between electrically conductive diamond particles and electrically insulating diamond particles to reduce any electrical charges on the substrate., 'a triple-point cathode coating ...

Diamond Semiconductor Device

An electrical device comprising a substrate of diamond material and elongate metal protrusions extending into respective recesses in the substrate. Doped semiconductor layers, arranged between respective protrusions and the substrate, behave as n type semiconducting material on application of an electric field, between the protrusions and the substrate, suitable to cause a regions of positive space charge within the semiconductor layers. 1. An electrical device comprising:a substrate of diamond material;at least one elongate first electrically conductive portion extending into a respective recess in said substrate; andat least one doped semiconducting region, arranged between at least one respective said first electrically conductive portion and said substrate, and adapted to behave as an n type semiconducting material on application of an electric field, between said first electrically conductive portion and said substrate, suitable to cause a region of positive space charge within the semiconducting region,wherein at least one recess further comprises at least one inclined distal surface defining a point, wherein at least one doped semiconducting region is arranged on a respective inclined distal surface.2. The device of claim 1 , wherein at least one said semiconducting region includes diamond.3. The device of claim 1 , wherein at least one said semiconducting region includes at least one donor dopant to impart an n-type semiconducting characteristic to said region.4. The device of claim 3 , wherein at least one said semiconducting region includes a plurality of dopant materials to impart an n-type semiconducting characteristic to said region.5. The device of according to claim 3 , wherein at least one said dopant is a group I element.6. The device of claim 3 , wherein at least one said dopant is a group V element.7. The device of claim 3 , wherein at least one said dopant is a group VI element.8. The device of claim 1 , wherein at least one said first ...

INTEGRATED VACUUM MICROELECTRONIC STRUCTURE AND MANUFACTURING METHOD THEREOF

An integrated vacuum microelectronic structure is described as having a highly doped semiconductor substrate, a first insulating layer placed above said doped semiconductor substrate, a first conductive layer placed above said first insulating layer, a second insulating layer placed above said first conductive layer, a vacuum trench formed within said first and second insulating layers and extending to the highly doped semiconductor substrate, a second conductive layer placed above said vacuum trench and acting as a cathode, a third metal layer placed under said highly doped semiconductor substrate and acting as an anode, said second conductive layer is placed adjacent to the upper edge of said vacuum trench, the first conductive layer is separated from said vacuum trench by portions of said second insulating layer and is in electrical contact with said second conductive layer. 1. A method , comprising:depositing a first insulating layer on a first surface of a substrate;depositing a first conductive layer on the first insulating layer;selectively removing portions of the first conductive layer;depositing a second insulating layer on the first conductive layer and the first insulating layer;forming a trench in the first and second insulating layers, the trench extending to the substrate, the trench being spaced from the first conductive layer by portions of the second insulating layer;forming a cathode by depositing a second conductive layer over the trench and on the second insulating layer; andforming an anode by forming a third conductive layer on a second surface of the substrate.2. The method according to claim 1 , further comprising:forming openings in the second insulating layer by selectively removing portions of the second insulating layer; anddepositing a third conductive layer on the second conductive layer and in the openings, the third conductive layer contacting the first conductive layer and the second conductive layer.3. The method according to ...

Iridium Tip, Gas Field Ion Source, Focused Ion Beam Apparatus, Electron Source, Electron Microscope, Electron Beam Applied Analysis Apparatus, Ion-Electron Multi-Beam Apparatus, Scanning Probe Microscope, and Mask Repair Apparatus

There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus. 1. An iridium tip comprising a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation.2. The iridium tip according to claim 1 ,wherein the pyramid structure has one {111} crystal plane as one of the plurality of pyramid surfaces in the apex portion.3. The iridium tip according to claim 1 ,wherein the apex portion of the pyramid structure has a apex with <210> orientation and surrounded by one {100} crystal plane and two {111} crystal planes.4. The iridium tip according to claim 1 ,wherein the pyramid structure has an apex constituted by a single iridium atom.5. The iridium tip according to claim 4 ,wherein the pyramid structure includes a first layer composed of the single iridium atom constituting the apex of the pyramid structure, a second layer immediately below the first layer and composed of three iridium atoms located at vertices of a triangle, and a third layer immediately below the second layer and composed of six iridium atoms located at vertices and sides of a triangle.6. A gas field ion source comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the iridium tip according to as an emitter which is configured to emit an ion beam;'}an ion source chamber which accommodates the emitter;a gas supply section which is configured to supply a gas to be ionized, to the ion source chamber;an extraction electrode which is ...

ELECTRON SOURCE OPERATING METHOD

The present disclosure provides an electron source operating method, the electron source including at least one emission site fixed on a tip, the emission site being a reaction product formed by metal atoms of a surface of the tip and gas molecules under an electric field, and the operating method comprises emitting electrons by controlling operating parameters of the electron source. 1. An electron source operating method which is applied for an electron source , the electron source comprising at least one emission site fixed on a tip , wherein the emission site is a reaction product formed by metal atoms of a surface of the tip and gas molecules under an electric field , and wherein the electron source operating method comprises:emitting electrons by controlling operating parameters of the electron source.2. The method of claim 1 , wherein operating parameters of the electron source comprise a operating bias and one or more of an operating temperature or an operating pressure of an environment in which the electron source is located.3. The method of claim 1 , further comprising:performing heat treatment on the electron source before or after the electron source emits electrons; and/orperforming heat treatment while the electron source emits electrons.4. The method of claim 2 , wherein the operating temperature is lower than a minimum value in a damaged temperature for the tip claim 2 , and a disappearance temperature of the emission site.5. The method of claim 2 , wherein the operating bias applied when the electron source emits electrons comprises one or more of a continuous bias or a pulse bias.6. The method of claim 2 ,{'sup': '−3', 'wherein the operating temperature is less than or equal to 1000 K and the operating pressure is less than or equal to 10Pa, or'}{'sup': '−6', 'the operating temperature is less than or equal to 150 K and the operating pressure is less than or equal to 1EPa, or'}{'sup': '−6', 'the operating temperature is less than or equal to 800 K ...

FIELD EMISSION DEVICES AND METHODS OF MANUFACTURING GATE ELECTRODES THEREOF

A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode comprising a graphene sheet covering the opening. A method of manufacturing a gate electrode may comprise: forming a graphene thin film on one surface of a conductive film; forming a mask layer having an etching opening on another surface of the conductive film, wherein the etching opening exposes a portion of the conductive film; partially removing the conductive film through the etching opening to partially expose the graphene thin film; and/or removing the mask layer. 1. A field emission device , comprising:an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode;an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; anda gate electrode comprising a graphene sheet covering the opening.2. The field emission device of claim 1 , wherein the gate electrode further comprises an electrode unit around the opening claim 1 , andwherein the graphene sheet is connected to the electrode unit.3. The field emission device of claim 1 , wherein the graphene sheet is a graphene single-layered film or a graphene multi-layered film.4. A field emission device claim 1 , comprising:an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode;an insulating spacer around the emitter; anda gate electrode, supported by the insulating spacer, comprising an electrode unit that defines an opening that is a discharge path of electrons emitted from the emitter, and a tunneling member that covers the opening and passes the electrons therethrough according to a tunneling effect.5. ...

FIELD EMISSION DEVICES AND METHODS OF MANUFACTURING EMITTERS THEREOF

A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode around the opening. The electron emission source may comprise a plurality of graphene thin films vertically supported in the cathode electrode toward the opening. 1. A field emission device , comprising:an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode;an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; anda gate electrode around the opening;wherein the electron emission source comprises a plurality of graphene thin films vertically supported in the cathode electrode toward the opening.2. The field emission device of claim 1 , wherein each of the plurality of graphene thin films comprises:a first portion buried in the cathode electrode; anda second portion that extends from the first portion and is exposed from the cathode electrode.3. The field emission device of claim 1 , wherein the cathode electrode has a pointed shape toward the opening claim 1 , andwherein the plurality of graphene thin films are in a pointed structure toward the opening.4. The field emission device of claim 1 , wherein each of the plurality of graphene thin films is a graphene single-layered film.5. The field emission device of claim 1 , wherein each of the plurality of graphene thin films is a graphene multi-layered film.6. A field emission device claim 1 , comprising:a body comprising a cavity and an opening allowing the cavity to communicate with an outside of the body;a cathode electrode in the cavity, wherein a plurality of graphene thin films are vertically toward the opening at a position in the cavity ...

COLD FIELD ELECTRON EMITTERS BASED ON SILICON CARBIDE STRUCTURES

A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cmat 7.5 V/μm is demonstrated in a macroscopic emitter array. The emitter is comprised of a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security. 1. A method of forming a monolithic , homogeneous , and porous silicon carbide field emitter having a plurality of discrete emission projections extending from a face of the field emitter , the method comprising:providing a silicon carbide substrate;providing an anodizing solution including (i) at least one reducing agent, (ii) at least one oxidizer, and (iii) water;electrochemically etching either face of the silicon carbide substrate with the anodizing solution for an effective period of time to thereby form a porous silicon carbide substrate;subjecting the face of the porous silicon carbide substrate to ion etching to thereby form a silicon carbide field emitter having a plurality of discrete emission projections of porous silicon carbide extending from the face of the field emitter.2. The method of wherein the electrochemically etching uses a voltage within a range of from about 10V to about 100V.3. The method of wherein the electrochemically etching uses a voltage of about 20V.4. The method of wherein the period of time is at least 1 minute.5. The method of wherein the period of time is from about 5 minutes to about 4 hours.6. The method of wherein the reducing agent of the anodizing solution is hydrofluoric acid and the oxidizer of the anodizing solution is ethanol.7. The method of wherein the anodizing solution includes from about 1% to about 30% hydrofluoric acid and from about 5% to ...

LIGHT MODULATED ELECTRON SOURCE

A light modulated electron source utilizes a photon-beam source to modulate the emission current of an electron beam emitted from a silicon-based field emitter. The field emitter's cathode includes a protrusion fabricated on a silicon substrate and having an emission tip covered by a coating layer. An extractor generates an electric field that attracts free electrons toward the emission tip for emission as part of the electron beam. The photon-beam source generates a photon beam including photons having an energy greater than the bandgap of silicon, and includes optics that direct the photon beam onto the emission tip, whereby each absorbed photon creates a photo-electron that combines with the free electrons to enhance the electron beam's emission current. A controller modulates the emission current by controlling the intensity of the photon beam applied to the emission tip. A monitor measures the electron beam and provides feedback to the controller. 1. A light modulated electron source comprising:a field emitter cathode including a silicon substrate having opposing first and second surfaces, and an emitter protrusion having a base integrally connected to the silicon substrate, a body portion extending from the first surface, and an emission tip disposed at a distal end of the body portion;an electrode fixedly positioned adjacent to the field emitter cathode and configured to generate an electric field that attracts free electrons in the silicon substrate toward the emission tip;a photon-beam source configured to generate a photon beam including photons having a wavelength shorter than about 1 μm, and configured to direct said photon beam onto the emitter protrusion such that at least some of said photons are absorbed by said field emitter cathode; anda control circuit configured to modulate an emission current of an electron beam including electrons emitted from the emission tip by controlling an intensity of the photon beam transmitted from the photon-beam ...

Ion source with cathode having an array of nano-sized projections

An ion source for use in a particle accelerator includes at least one cathode. The at least one cathode has an array of nano-sized projections and an array of gates adjacent the array of nano-sized projections. The array of nano-sized projections and the array of gates have a first voltage difference such that an electric field in the cathode causes electrons to be emitted from the array of nano-sized projections and accelerated downstream. There is a ion source electrode downstream of the at least one cathode, and the at least one cathode and the ion source electrode have the same voltage applied such that the electrons enter the space encompassed by the ion source electrode, some of the electrons as they travel within the ion source electrode striking an ionizable gas to create ions.

SILICON ELECTRON EMITTER DESIGNS

Electron source designs are disclosed. The emitter structure, which may be silicon, has a layer on it. The layer may be graphene or a photoemissive material, such as an alkali halide. An additional layer between the emitter structure and the layer or a protective layer on the layer can be included. Methods of operation and methods of manufacturing also are disclosed. 1. An electron source comprising:an emitter structure that includes silicon;a layer disposed on an outer surface of the emitter structure, wherein the layer includes one of graphene or a photoemissive material.2. The electron source of claim 1 , wherein the layer includes the graphene.3. The electron source of claim 2 , further comprising a metal layer disposed between the emitter structure and the layer claim 2 , wherein the metal layer has a thickness from 10 nm to 50 nm.4. The electron source of claim 3 , wherein the metal layer includes nickel claim 3 , copper claim 3 , iron claim 3 , or platinum.5. The electron source of claim 1 , wherein the layer includes the photoemissive material.6. The electron source of claim 5 , wherein the photoemissive material is an alkali halide claim 5 , and wherein the alkali halide includes CsI claim 5 , CsBr claim 5 , or CsTe.7. The electron source of claim 5 , further comprising a metal layer disposed between the emitter structure and the layer.8. The electron source of claim 5 , further comprising a protective coating disposed on the layer.9. The electron source of claim 5 , wherein the layer has a thickness from 0.1 nm to 500 nm.10. A plurality of the electron sources of claim 1 , wherein the plurality of the electron sources forms an array.11. The electron source of claim 1 , wherein the emitter structure has a diameter from 1 nm to 30 nm.12. The electron source of claim 1 , wherein the emitter structure defines a tip with a radius from 5 nm to 20 nm.13. A method comprising:emitting electrons from an electron source comprising an emitter structure that includes ...

Cold field electron emitters based on silicon carbide structures

A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm 2 at 7.5 V/μm is demonstrated in a macroscopic emitter array. The emitter has a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.

PHOTOCATHODE DESIGNS AND METHODS OF GENERATING AN ELECTRON BEAM USING A PHOTOCATHODE

A photocathode can include a body fabricated of a wide bandgap semiconductor material, a metal layer, and an alkali halide photocathode emitter. The body may have a thickness of less than 100 nm and the alkali halide photocathode may have a thickness less than 10 nm. The photocathode can be illuminated with a dual wavelength scheme. 1. A photocathode comprising:{'b': '100', 'a body fabricated of a wide bandgap semiconductor material, wherein the body has a first surface and a second surface opposite the first surface, and wherein the body has a thickness between the first surface and the second surface of less than nm;'}a metal layer disposed on the first surface, wherein in the metal layer is configured as an electrical contact that applies an electric field to guide electrons toward a surface of the photocathode; and{'b': '10', 'an alkali halide photocathode emitter disposed on the second surface, wherein the alkali halide photocathode has a thickness less than nm.'}2. The photocathode of claim 1 , wherein the metal layer includes one or more of platinum or gold.3. The photocathode of claim 1 , wherein the wide bandgap semiconductor material includes an alloy of InGaN.4. The photocathode of claim 3 , wherein the alloy of InGaN is an alloy of InGaN and GaN.5. The photocathode of claim 1 , wherein the wide bandgap semiconductor material includes an alloy of AlGaN.6. The photocathode of claim 5 , wherein the alloy of AlGaN is an alloy of AlGaN and GaN.7. The photocathode of claim 1 , wherein the wide bandgap semiconductor material includes an alloy of InGaP.8. The photocathode of claim 7 , wherein the alloy of InGaP is an alloy of InGaP and GaP.9. The photocathode of claim 1 , wherein the wide bandgap semiconductor material includes at least one of GaN and GaP.10. The photocathode of claim 1 , wherein the alkali halide photocathode includes one or more of CsI claim 1 , CsBr claim 1 , or CsTe.11. The photocathode of claim 1 , further comprising a cap layer disposed on ...

CATHODE STRUCTURE FOR COLD FIELD ELECTRON EMISSION AND METHOD OF FABRICATING THE SAME

A cathode structure for cold field electron emission and method of fabricating a single-tip cathode structure for cold field electron emission. The cathode structure comprises a pointed cathode wire; and a graphene-based coating on at least a tip of the pointed cathode wire. In a preferred embodiment, graphene is coated on nickel tips by chemical vapour deposition wherein nickel functions as a catalyst for growth of graphene. The cathode structure provides stable cold field emission for electron microscopy and lithography applications and exhibits an ultralow work function value of about 1.1 eV. 1. A cathode structure for cold field electron emission comprising:a pointed cathode wire; anda graphene-based coating on at least a tip of the pointed cathode wire.2. The cathode structure of claim 1 , exhibiting a low work function value of about 1.1 eV.3. The cathode structure of claim 1 , wherein the cathode wire comprises a metal.4. The cathode structure of claim 3 , wherein the metal is in polycrystalline form.5. The cathode structure of claim 3 , wherein the metal comprises one or more of a group consisting of Ni claim 3 , Co claim 3 , Pd claim 3 , Al claim 3 , Cu claim 3 , and Ag.6. The cathode structure of claim 1 , wherein the graphene based coating comprises one or more of a group consisting of graphene claim 1 , graphene oxide (GO) claim 1 , rGO and their derivatives.7. The cathode structure of claim 1 , wherein a radius of the tip is in the range from about 100 to 800 nm.8. The cathode structure of claim 1 , exhibiting a low electric field strength requirement of about 0.5 V/nm.9. A method of fabricating a cathode structure for cold field electron emission claim 1 , the method comprising the steps of:providing a pointed cathode wire; andcoating at least a tip of the pointed cathode wire with a graphene-based material.10. The method of claim 9 , wherein the coating is performed by chemical vapor deposition claim 9 , CVD.11. The method of claim 10 , wherein a ...

Iridium Tip, Gas Field Ion Source, Focused Ion Beam Apparatus, Electron Source, Electron Microscope, Electron Beam Applied Analysis Apparatus, Ion-Electron Multi-Beam Apparatus, Scanning Probe Microscope, and Mask Repair Apparatus

There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus. 1. A gas field ion source comprising:an iridium tip comprising a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation, the iridium tip being an emitter which is configured to emit an ion beam;an ion source chamber which accommodates the emitter;a gas supply section which is configured to supply a gas to be ionized, to the ion source chamber;an extraction electrode which is configured to ionize the gas to generate ions of the gas and apply a voltage for extracting the ions of the gas from the emitter; anda temperature control section which is configured to cool the emitter.2. The gas field ion source according to claim 1 ,wherein a main component of the gas is at least any one of hydrogen, nitrogen, oxygen, helium, neon, argon, krypton, and xenon, or a mixture of at least any of these gases.3. The gas field ion source according to claim 1 ,wherein a main component of the gas is nitrogen.4. The gas field ion source according to claim 3 ,wherein a purity of nitrogen which is the main component of the gas is 99% or more.5. A focused ion beam apparatus comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the gas field ion source according to ; and'}a control section which is configured to form a focused ion beam with the ions of the gas generated in the gas field ion source and irradiate a sample with the focused ion beam ...

ELECTRON EMISSION ELEMENT AND METHOD FOR MANUFACTURING THE SAME

An electron emission device and a method of manufacturing the same are provided. The electron emission device includes: i) a substrate including a metal tip; ii) carbon nano tubes that are positioned on the metal tip; and iii) a lithium layer that is positioned on the carbon nano tubes. 1. An electron emission device , comprising:a substrate comprising a metal tip;carbon nano tubes that are positioned on the metal tip; anda lithium layer that is positioned on the carbon nano tubes.2. The electron emission device of claim 1 , wherein the lithium layer has an average thickness of 4 nm to 5 nm.3. The electron emission device of claim 2 , wherein the lithium layer has an average thickness of 4.6 nm to 4.7 nm.4. The electron emission device of claim 2 , wherein a thickness of the lithium layer has a minimum value in a front end portion of the metal tip.5. The electron emission device of claim 1 , wherein the carbon nano tubes have a diameter of 10 nm to 15 nm claim 1 , when the carbon nano tubes are a multi-walled carbon nano tube.6. The electron emission device of claim 1 , wherein the carbon nano tubes have a diameter of 1 nm to 2 nm claim 1 , when the carbon nano tubes are a single wall carbon nano tube.7. The electron emission device of claim 1 , wherein the metal tip has an average diameter of 400 nm to 600 nm.8. A method of manufacturing an electron emission device claim 1 , the method comprising:providing a substrate comprising a metal tip;electrochemically etching the substrate;providing carbon nano tubes on the substrate using electrophoretic deposition (EPD); andplating the carbon nano tubes with lithium.9. The method of claim 8 , wherein the plating of the carbon nano tubes with lithium comprises:{'sub': '6', 'providing a plating solution comprising ethylene carbonate (EC), diethyl carbonate (DEC), and lithium hexafluorophosphate (LiPF);'}dipping a substrate in which the carbon nano tubes are provided in the plating solution and providing the substrate as a ...

FIELD EMISSION CATHODE ELECTRON SOURCE AND ARRAY THEREOF

A field emission cathode electron source and an array thereof provided by embodiments of the present disclosure include a substrate, and a cathode, a cathode tip and a gate disposed on the same side of the substrate. The cathode, the cathode tip and the gate are disposed on an upper surface of the substrate, and the cathode tip is connected to the cathode, and the gate is located on, a side of the cathode tip away from the cathode and an electron emission end of the cathode tip is directed toward a side of the substrate close to the gate. The cathode tips are arranged on the substrate in parallel with the substrate. Compared with the three dimensional stacked structure in the prior art, the present disclosure has a higher stability and reliability and is suitable for a large-scale integration. 1. A field emission cathode electron source , comprising: a substrate , and a cathode , a cathode tip and a gate disposed on the same side of the substrate , wherein the cathode , the cathode tip and the gate are all disposed on an upper surface of the substrate; the cathode tip is connected to the cathode , and the gate is located on a side of the cathode tip away from the cathode; and an electron emission end of the cathode tip is directed toward a side of the substrate close to the gate.2. The field emission cathode electron source according to claim 1 , wherein there are two gates claim 1 , and the two gates are respectively arranged on two sides of the cathode tip.3. The field emission cathode electron source according to claim 1 , wherein the cathode tip has a triangular shape.4. The field emission cathode electron source according to claim 1 , further comprising an insulating layer disposed on the upper surface of the substrate claim 1 , and the cathode claim 1 , the cathode tip and the gate are all disposed on the insulating layer.5. The field emission cathode electron source according to claim 4 , wherein the substrate is made of silicon material claim 4 , and the ...

Method for Manufacturing Electron Source

A conventional method to process a tip fails to designate the dimension of the shape of the end of the tip, and so fails to obtain a tip having any desired diameter. Impurities may be attached to the tip. Based on a correlation between the voltage applied or the time during processing of the end of the tip and the diameter of the tip end, the applied voltage is controlled so as to obtain a desired diameter of the tip end for processing of the tip. This allows a sharpened tip made of a tungsten monocrystal thin wire to be manufactured to have any desired diameter in the range of 0.1 μm or more and 2.0 μm or less.

INTEGRATED VACUUM MICROELECTRONIC DEVICE AND FABRICATION METHOD THEREOF

An integrated vacuum microelectronic device comprises: a highly doped semiconductor substrate, at least one insulating layer) placed above said doped semiconductor substrate, a vacuum aperture formed within said at least one insulating layer and extending to the highly doped semiconductor substrate, a first metal layer acting as a cathode, a second metal layer placed under said highly doped semiconductor substrate and acting as an anode. The first metal layer is placed adjacent to the upper edge of the vacuum aperture and the vacuum aperture has a width dimension such as the first metal layer remains suspended over the vacuum aperture. 1. An integrated vacuum microelectronic device comprising:a highly doped semiconductor substrate,at least one insulating layer placed above said doped semiconductor substrate,a vacuum aperture formed within said at least one insulating layer and extending to the highly doped semiconductor substrate,a first metal layer placed above said vacuum aperture and configured to act as a cathode,a second metal layer placed under said highly doped semiconductor substrate and configured to act as an anode,wherein said first metal layer is placed adjacent to an upper edge of said vacuum aperture, said vacuum aperture having a width dimension such that the first metal layer remains suspended over said vacuum aperture.2. The integrated vacuum microelectronic device according to claim 1 , wherein said at least one insulating layer comprises two or more insulating layers of a stack that includes one or more conductive layers separating the two or more insulating layers from each other claim 1 , said vacuum aperture is formed within said stack claim 1 , the integrated vacuum microelectronic device comprising one or more electrodes contacting the one or more conductive layers of the stack.3. The integrated vacuum microelectronic device according to claim 2 , comprising a further insulating layer placed on sidewalls of the vacuum aperture.4. The ...

ARRAY OF CARBON NANOTUBE MICRO-TIP STRUCTURES

An array of carbon nanotube micro-tip structure includes an insulating substrate and a plurality of patterned carbon nanotube film structures. The insulating substrate includes a surface. The surface includes an edge. A plurality of patterned carbon nanotube film structures spaced from each other. Each of the plurality of patterned carbon nanotube film structures is partially arranged on the surface of the insulating substrate. Each of the plurality of patterned carbon nanotube film structures comprises two strip-shaped arms joined together forming a tip portion protruding and suspending from the edge of the surface of the insulating substrate. Each of the two strip-shaped arms comprises a plurality of carbon nanotubes parallel to the surface of the insulating substrate. 1. An array of carbon nanotube micro-tip structures comprising:an insulating substrate comprising a surface, the surface comprising an edge; anda plurality of patterned carbon nanotube film structures spaced from each other,wherein each of the plurality of patterned carbon nanotube film structures is partially arranged on the surface of the insulating substrate and comprises two strip-shaped arms joined together forming a tip portion protruding and suspending from the edge of the surface of the insulating substrate, and each of the two strip-shaped arms comprising a plurality of carbon nanotubes parallel to the surface of the insulating substrate.2. The array of carbon nanotube micro-tip structures of claim 1 , wherein an angle α between length directions of the two strip-shaped arms is less than 180°.3. The array of carbon nanotube micro-tip structures of claim 1 , wherein the each of the two strip-shaped arms comprises a plurality of carbon nanotube films stacked together claim 1 , each of the plurality of carbon nanotube films comprises the plurality of carbon nanotubes substantially aligned along a same direction claim 1 , and an angle β between the plurality of carbon nanotubes in different ...

PHOTOCATHODE INCLUDING FIELD EMITTER ARRAY ON A SILICON SUBSTRATE WITH BORON LAYER

A photocathode utilizes an field emitter array (FEA) integrally formed on a silicon substrate to enhance photoelectron emissions, and a thin boron layer disposed directly on the output surface of the FEA to prevent oxidation. The field emitters are formed by protrusions having various shapes (e.g., pyramids or rounded whiskers) disposed in a two-dimensional periodic pattern, and may be configured to operate in a reverse bias mode. An optional gate layer is provided to control emission currents. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer. An optional external potential is generated between the opposing illuminated and output surfaces. An optional combination of n-type silicon field emitter and p-i-n photodiode film is formed by a special doping scheme and by applying an external potential. The photocathode forms part of sensor and inspection systems. 1. A photocathode comprising:a silicon substrate having opposing first and second surfaces and including a plurality of integral field emitter protrusions, each said field emitter protrusion having fixed portion integrally connected to the silicon substrate and extending from said second surface to a tip portion, anda substantially pure boron layer hermetically disposed at least on the tip portion of each said field emitter protrusion.2. The photocathode of claim 1 , wherein the silicon substrate further comprises dopants configured such that claim 1 , during operation of said photocathode claim 1 , each said field emitter protrusion operates as a field emitter in a reverse bias mode.3. The photocathode of claim 1 , wherein the plurality of field emitter protrusions are arranged in a two-dimensional periodic pattern on said second surface.4. The photocathode of claim 1 , wherein said substantially pure boron layer has a thickness in the range of approximately 1 nm to 5 nm.5. The photocathode of claim 1 , ...

FIELD EMISSION DEVICE AND FIELD EMISSION METHOD

An emitter () and a target () are arranged so as to face each other in a vacuum chamber (), and a guard electrode () is provided at an outer circumferential side of an electron generating portion () of the emitter (). The emitter () is supported movably in both end directions of the vacuum chamber () by the emitter supporting unit () having a movable body (). The emitter supporting unit () is operated by an operating unit () connected to the emitter supporting unit (). By operating the emitter supporting unit () by the operating unit (), a distance between the electron generating portion () of the emitter () and the target () is changed, and a position of the emitter () is fixed at an arbitrary distance, then field emission is performed with the position of the emitter () fixed.

Metal protective layer for electron emitters with a diffusion barrier

An emitter with a diameter of 100 nm or less is used with a protective cap layer and a diffusion barrier between the emitter and the protective cap layer. The protective cap layer is disposed on the exterior surface of the emitter. The protective cap layer includes molybdenum or iridium. The emitter can generate an electron beam. The emitter can be pulsed.

Field emission cathode

The present invention relates to a field emission cathode, comprising an at least partly electrically conductive base structure, and a plurality of electrically conductive micrometer sized sections spatially distributed at the base structure, wherein at least a portion of the plurality of micrometer sized sections each are provided with a plurality of electrically conductive nanostructures. Advantages of the invention include lower power consumption as well as an increase in light output of e.g. a field emission lighting arrangement comprising the field emission cathode.

Nanotubes, field emission cathode and cathode ray tube having nanotubes and method for forming them

본 발명은 다이아몬드 또는 다이아몬드상 탄소로 코팅된 나노튜브, 이를 포함하는 전계 방출기 음극 및 이 음극을 포함하는 전계 방출기를 제공한다. 본 발명은 또한 나노튜브를 다이아몬드 또는 다이아몬드상 탄소로 코팅함으로써 나노튜브로 이루어진 음극을 포함하는 전계 방출기로부터의 탄소의 증발을 방지하는 방법을 제공한다. 다른 양상에서, 본 발명은 나노튜브로 이루어진 음극을 포함하는 전계 방출기로부터의 탄소의 증발을 방지하는 방법을 제공하는바, 이 방법은 나노튜브를 다이아몬드 또는 다이아몬드상 탄소로 코팅하는 단계를 포함한다. The present invention provides a nanotube coated with diamond or diamond-like carbon, a field emitter cathode comprising the same, and a field emitter comprising the cathode. The present invention also provides a method of preventing evaporation of carbon from a field emitter comprising a cathode made of nanotubes by coating the nanotubes with diamond or diamond-like carbon. In another aspect, the present invention provides a method of preventing evaporation of carbon from a field emitter comprising a cathode made of nanotubes, the method comprising coating the nanotubes with diamond or diamond-like carbon. 다이아몬드, 탄소, 나노튜브, CRT, 음극, 전자 방출 Diamond, carbon, nanotube, CRT, cathode, electron emission

用于场发射装置的一种场发射阴极结构

本发明总的来说涉及用于场发射装置的一种场发射阴极结构，特别适于通过在场发射阴极结构的透气部分下侧布置吸气剂元件来增强场发射装置的可靠性并延长场发射装置的寿命。本发明还涉及包括这种场发射阴极结构的场发射照明装置和场发射照明系统。

Method for manufacturing electron source

在以往的基片加工方法中，无法指定前端形状的尺寸来进行制作，无法得到具有所期望的任意径的基片。此外，基片中可能附着杂质。利用基片前端直径与正在加工基片前端时的施加电压或所围住的时间的相互关系，控制得到所期望前端直径的施加电压，来加工基片。由此，能够在钨单晶细丝尖锐化后的前端直径为0.1μm以上2.0μm以下的范围，制造具有所期望的任意径的基片。

Field emission device with stable electron emissions and its fabrication method

PURPOSE: A field emission display having stable electron emission characteristic and manufacturing method thereof is provided to improve stability and uniformity of electron emission characteristic by adapting resistor, coating film and control thin film transistor on the cathode tip in field emission display. CONSTITUTION: A silicon thin film(210) is formed on the top of insulated substrate(20). Cathode electrode(211) is formed at the selected area of silicon thin film(210). Cylindrical insulator(212) is formed at the selected area of cathode electrode. Conical cathode(213) is formed at the top of insulator. Thin coating film is formed at the surface of cathode. The first gate is insulated electrically by above cathode electrode(211) and the first gate insulation film and is apart in a designated distance from above cathode(213). Drain(222) is formed to be connected electrically with cathode electrode at silicon thin film. Source(223) is formed at silicon thin film leaving above drain(222) and channel(221) between an interval. The second gate is formed to be insulated electrically by above channel(221) and the second gate insulation film.

Method of preparing an ultra sharp tip, apparatus for preparing an ultra sharp tip, and use of an apparatus

A method of preparing an ultra sharp tip, in particular a single atom tip, is provided, comprising providing a tip (11) having a shank (15), an apex (16), and a coating (14,17,18) covering the shank and the apex; locally removing the coating (14) from the apex (16) by field evaporation; and partially or fully restoring the coating at the apex (16).

Method of preparing an ultra sharp tip, apparatus for preparing an ultra sharp tip, and use of an apparatus

A method of preparing an ultra sharp tip, in particular a single atom tip, is provided, comprising providing a tip having a shank, an apex, and a coating covering the shank and the apex; locally removing the coating from the apex by field evaporation; and partially or fully restoring the coating at the apex.

Nano-tip fabrication by spatially controlled etching

A method of fabricating nano-tips involves placing a precursor nanotip with an apex and shank in a vacuum chamber; optionally applying an electric field to the precursor nanotip to remove oxide and other contaminant species; subsequently admitting an etchant gas to the vacuum chamber to perform field assisted etching by preferential adsorption of the etchant gas on the shank; and gradually reducing the applied electric field to confine the adsorption of the etchant gas to the shank as etching progresses.

Field emission display device

本发明涉及一种场发射显示器。该场发射显示器包括一阴极、一与阴极相连的缓冲层、多个电子发射子及一阳极，其中，多个电子发射子形成于缓冲层上，每一电子发射子包括形成于缓冲层上的第一部分，该阳极与多个电子发射子相隔一定空间间距，该缓冲层与电子发射子的第一部分由硅的碳化物制成，且包括至少一渐变的电阻分布，电阻最高的部分靠近阴极，电阻最低的部分靠近阳极。该场发射显示器因具有渐变的电阻分布，解决了传统场发射显示器发射电压偏大、电子发射不均匀的缺点。

Field emission device and the manufacturing method thereof and field emission display using it

PURPOSE: A field emission device, a method for manufacturing the same, and a field emission display using the same are provided to improve the electron emission efficiency by forming a structure formed with conductive/insulating/conductive/insulating/vacuum. CONSTITUTION: An electrode layer pattern(22a) and the first insulating layer pattern(24a) are laminated sequentially on one side of a lower substrate(20). A linear conductive material pattern(26) is formed at an end of one side of the first insulating layer pattern(24a). The second insulating layer pattern(28) is applied on an upper portion of the lower substrate(20) in order to cover the first insulating pattern(24a) and the linear conductive material pattern(26).

Line-type field emission emitter and fabrication method thereof

PURPOSE: A linear field emission emitter and a manufacturing method thereof are provided to improve electron emission efficiency and to reduce a gate voltage by emitting electron at only a part required corresponding to phosphor. CONSTITUTION: A linear emitter tip(54) is formed on a substrate(50) and has a linear sharpness part. An insulator is formed on the substrate to be corresponding to both side of the linear emitter tip(54) leaving a designated gap. A gate electrode is formed on the insulator. A depression part is formed regularly at the side of the gate electrode corresponding to the linear emitter tip. An emitter electrode(52) is formed on the surface of the substrate and supplies an electric field to the linear emitter tip. A resistor layer is formed between the emitter electrode and the linear emitter tip and restricts current. A section of the emitter tip is triangle, and an electron is emitted from only the sharpness part of the linear emitter tip located near to the side of the gate electrode.

Field emission device and method of manufacturing the same

본 발명은 전계 방출 소자 및 그 제조방법에 관한 것으로서, 기판; 상기 기판 상에 차례로 형성되며, 상기 기판의 일부를 노출시키는 개구부를 갖는 제1절연막, 전도막 및 제2절연막; 상기 전도막의 측면으로부터 상기 개구부의 중심부를 향해 연장 형성된 팁 에미터; 상기 제2절연막의 상부에, 상기 제2절연막과 소정거리 이격되어 배치된 형광 패널; 및 상기 제2절연막과 상기 형광 패널 사이에 형성된 스페이서를 포함하는 전계 방출 소자를 제공하며, 또한, 본 발명은 상기 전계 방출 소자의 제조방법을 제공한다. The present invention relates to a field emission device and a method of manufacturing the same; A first insulating film, a conductive film, and a second insulating film formed on the substrate in order and having an opening exposing a portion of the substrate; A tip emitter extending from a side of the conductive film toward the center of the opening; A fluorescent panel disposed on the second insulating layer, spaced apart from the second insulating layer by a predetermined distance; And a spacer formed between the second insulating film and the fluorescent panel. The present invention also provides a method of manufacturing the field emission device. FED, 수평, 팁 에미터, LOCOS(Local Oxidation of Silicon) FED, Horizontal, Tip Emitter, Local Oxidation of Silicon (LOCOS)

Field emission device, manufacturing method thereof and field emission display device using the same

본 발명은 전자 브레이크다운 현상을 이용하여 효율적으로 전자를 방출할 수 있는 전계방출 소자 및 그 제조방법과 전계방출 디스플레이 장치에 관한 것이다. 본 발명의 전계방출 소자는 하부기판 상의 일측부에 형성된 전극층패턴과, 전극층패턴 상에 형성된 제1 절연층패턴과, 제1 절연층패턴의 일측 끝부위로부터 신장된 선형 도체패턴과, 하부기판 상의 다른 측부와 제1 절연층패턴 및 선형 도체패턴을 포획하도록 형성된 제2 절연층을 구비하는 것을 특징으로 한다. 본 발명에 의하면, 도체/절연체/도체/절연체/진공의 구조로써 저전압하에서도 높은 전류밀도를 가지는 전계방출 소자를 균일한 형상으로 제조할 수 있다.

Electron emitter and method for fabricating the same, cold cathode field electron emission element and method for fabricating the same, and cold cathode field electron emission display and method

冷阴极场致电子发射部件由以下部分构成：设置于支持体10上的阴电极11；形成于支持体10和阴电极11之上的绝缘层12；形成于绝缘层12上的栅电极13；形成于栅电极13和绝缘层12的开口部14A、14B；在位于开口部14B底部的阴电极11部分之上所形成的电子发射部15。电子发射部15由基质21和以前端部突出的状态埋置于该基质21中的碳纳米管结构体20构成。

Stabilized and controlled electron sources, matrix systems of the electron sources, and method for production thereof

提出一种电子源，其中场致发射体由在基片上外延地生长的晶须构成。镇流电阻和激活区域被放置在场致发射体的实体中和或表面上。镇流电阻可以以具有n-n+，p-p+，p-n半导体结的形状的一个势垒或与荷电载流子流交叉的绝缘层来实现。用于控制这样的电子源的元件被垂直地排列。这允许大大地减小元件所化费的面积，这样，提高器件的分辨力和扩展其应用领域。这样，由于晶须生长场致发射体，有可能在强电场下由低电压控制发射电流。

Emission device and method for forming

An emission device includes a plurality of electron emitter structures of varied geometry that have a conducting layer deposited thereon. The conducting layer has openings located at tunneling sites for each of the electron emitter structures. The tunneling sites facilitate electron emissions from each of the varied geometry electron emitter structures upon voltage biasing of the conducting layer relative to the electron emitter structures.

ELECTRON SOURCE WITH IMPROVED OPTICAL CONTROL

L'invention concerne une source d'électrons (100) à commande optique comprenant au moins une pointe (P) réalisée en un matériau conducteur (Cond) dont la surface au voisinage de l'apex est recouverte d'au moins une monocouche (L) d'un semiconducteur bidimensionnel (semi2D), une monocouche comprenant entre 1 et 5 plans atomiques. The invention relates to an electronically controlled electron source (100) comprising at least one tip (P) made of a conductive material (Cond) whose surface in the vicinity of the apex is covered with at least one monolayer (L). ) a two-dimensional semiconductor (semi2D), a monolayer comprising between 1 and 5 atomic planes.

MONOBAGNET FIELD EFFECT EMITTER STRUCTURES WITH PORTES AND METHODS OF MAKING SAME

La présente invention est relative à des dispositifs (2300, 3500, 3900, 5300 et 5400) d'émission par effet de champ en nanobaguettes à portes, ces dispositifs ayant des distances relativement courtes des pointes des émetteurs aux portes, ce qui assure donc une densité relativement élevée des pointes d'émetteurs et une faible tension de déblocage, et des procédés de fabrication de tels dispositifs. Ces procédés emploient une combinaison de techniques classiques (lithographie, gravure, etc.) de traitement de dispositifs avec un dépôt de nanobaguettes par voie électrochimique. Ces procédés sont relativement simples, rentables et efficaces et ils donnent des dispositifs d'émission par effet de champ qui se prêtent à une utilisation dans des applications telles que l'imagerie radiographique, l'éclairage, les afficheurs à émission par effet de champ (AEC) à écrans plats, etc. The present invention relates to nanoscale gate-type field-effect emission devices (2300, 3500, 3900, 5300 and 5400), these devices having relatively short distances from the points of the emitters to the gates, thereby ensuring relatively high density of emitter tips and low deblocking voltage, and methods of making such devices. These methods employ a combination of conventional techniques (lithography, etching, etc.) for treating devices with an electrochemically deposited nanobagu. These methods are relatively simple, cost-effective and efficient, and provide field effect emitters that are suitable for use in applications such as radiographic imaging, lighting, and field emission displays ( AEC) with flat screens, etc.

Electron emission apparatus and method for making the same

An electron emission apparatus includes an insulating substrate, one or more grids located on the substrate, wherein the one or more grids includes: a first, second, third and fourth electrode that are located on the periphery of the gird, wherein the first and the second electrode are parallel to each other, and the third and fourth electrodes are parallel to each other; and one or more electron emission units located on the substrate. Each the electron unit includes at least one electron emitter, and the electron emitter includes a first end, a second end and a gap. At least one electron emission end is located in the gap.

Techniques for optimizing nanotips derived from frozen taylor cones

Optimization techniques are disclosed for producing sharp and stable tips/nanotips relying on liquid Taylor cones created from electrically conductive materials with high melting points. A wire substrate of such a material with a preform end in the shape of a regular or concave cone, is first melted with a focused laser beam. Under the influence of a high positive potential, a Taylor cone in a liquid/molten state is formed at that end. The cone is then quenched upon cessation of the laser power, thus freezing the Taylor cone. The tip of the frozen Taylor cone is reheated by the laser to allow its precise localized melting and shaping. Tips thus obtained yield desirable end-forms suitable as electron field emission sources for a variety of applications. In-situ regeneration of the tip is readily accomplished. These tips can also be employed as regenerable bright ion sources using field ionization/desorption of introduced chemical species.

Gas field ion source and method for using same, ion beam device, and emitter tip and method for manufacturing same

To provide a gas field ion source having a high angular current density, the gas field ion source is configured such that at least a base body of an emitter tip configuring the gas field ion source is a single crystal metal, such that the apex of the emitter tip is formed into a pyramid shape or a cone shape having a single atom at the top, and such that the extraction voltage in the case of ionizing helium gas by the single atom is set to 10 kV or more.

Field emission backplate and device

A field emission backplate, or device including such a backplate, comprising a plurality of grown emitter tips made from a semiconductor based material such as silicon. The backplate may be formed by first depositing a thin film of amorphous silicon on an aluminium substrate by plasma enhanced chemical vapour deposition. The tips are then grown on areas of the amorphous silicon layer which have been crystallised by exposure to a laser interference pattern, using a selective etch and growth process involving the use of a dilute silane/hydrogen plasma. The device may be constructed such that the backplate emits electrons into a vacuum or into a wide band gap light emitting polymer (figure 4). The device may also include a phosphorescent layer (figure 5). The device may be a display device.

Electron emission apparatus

Cold field emitter

A stable cold field electron emitter is produced by forming a coating on an emitter base material. The coating protects the emitter from the adsorption of residual gases and from the impact of ions, so that the cold field emitter exhibits short term and long term stability at relatively high pressures and reasonable angular electron emission.

Electron beam emitters with ruthenium coating

An emitter with a protective cap layer on an exterior surface of the emitter is disclosed. The emitter can have a diameter of 100 nm or less. The protective cap layer includes ruthenium. Ruthenium is resistant to oxidation and carbon growth. The protective cap layer also can have relatively low sputter yields to withstand erosion by ions. The emitter may be part of a system with an electron beam source. An electric field can be applied to the emitter and an electron beam can be generated from the emitter. The protective cap layer may be applied to the emitter by sputter deposition, atomic layer deposition (ALD), or ion sputtering.

The manufacture method of electron source

在以往的基片加工方法中，无法指定前端形状的尺寸来进行制作，无法得到具有所期望的任意径的基片。此外，基片中可能附着杂质。利用基片前端直径与正在加工基片前端时的施加电压或所围住的时间的相互关系，控制得到所期望前端直径的施加电压，来加工基片。由此，能够在钨单晶细丝尖锐化后的前端直径为0.1μm以上2.0μm以下的范围，制造具有所期望的任意径的基片。

Thermally enhanced compound field emitter

A compound field emitter (CFE) includes a first surface possessing a field enhancement factor >1, and a second surface possessing one or both of a field enhancement factor >1, or a low work function, wherein the second surface is coated, formed or applied upon the first surface. The second surface has a characteristic size at least 3 times smaller than the first surface, and the outer surface includes a coating of calcium aluminate 12CaO-7Al2O3.

Electron emitters with dopant gradient

Electron emitters and a method of fabricating emitters are disclosed, having a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitter tips and decreases toward the base of the emitter tips. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitter tips having impurity gradients.

Micro cold cathode and manufacturing method thereof

Carbon material, method for producing the same, electron-emitting device, and composite material

Fiber based field emitter display

A method of forming a field emission device and the resulting device including emitters formed of fiber segments. Tips are formed on the fiber segments that have a radius substantially small by exposing the tips to a reactive liquid for a duration of time. The tips are coated with a low work function conducting material to form emitters.

Field emission device and method for fabricating the same

Electron emitters with dopant gradient

Electron emitters and a method of fabricating emitters which have a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitters, and decreases toward the base of the emitters. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitters having impurity gradients.

Electron source

To provide an electron source to be used for a surface analyzer such as a scanning or transmission electron microscope or an Auger electron spectroscope, or an electron beam lithography machine, particularly for a semiconductor wafer inspection apparatus such as a scanning electron microscope to be used at a low acceleration with an electron beam acceleration voltage of up to 1 kV, CD SEM or DR SEM. An electron source wherein a barium supplying source consisting of a complex oxide comprising barium oxide and an oxide of metal other than barium, is provided at a portion of a single crystal needle of tungsten or molybdenum.

Carbon tips with expanded bases grown with simultaneous application of carbon source and etchant gases

Systems and methods are described for carbon tips with expanded bases. A method includes producing an expanded based carbon containing tip including: fabricating a carbon containing expanded base on a substrate; and then fabricating a carbon containing fiber on the expanded base. An apparatus includes a carbon containing expanded base coupled to a substrate; and a carbon containing fiber coupled to said carbon containing expanded base.

Fed with n-electrodes in one cell

본 발명은 단일 셀내에 N개의 전극을 가지는 전계 방출형 디스플레이 장치에 관한 것으로, 단일 셀 내에서 형성되는 에미터 전극 및 이에 형성되는 캐소드를 다수개(N개)로 나누어 형성하여, 에미터 전극 수에 따라 디스플레이 장치의 계조 처리를 '2N-2' 개수로 용이하게 처리토록 하는 전계 방출형 디스플레이 장치에 관한 것이다. The present invention relates to a field emission display device having N electrodes in a single cell, wherein the number of emitter electrodes formed by dividing the number of emitter electrodes formed in a single cell and the cathodes formed into a plurality of (N), Accordingly, the present invention relates to a field emission type display device for facilitating the gradation processing of the display device to the number of '2N-2'.

cold field electron emitter

본 발명은 텅스텐(100) 결정면의 일함수를 낮추어 냉음극(cold field emitter:CFE) 방식을 구현한 고휘도 냉전계 전자원에 관한 것으로, 본 발명의 냉전계 전자원은 냉전계 전자원에서 텅스텐 탐침을 플래싱한 뒤 (100)면에서 일함수가 낮아지도록 하여 고휘도 전자빔을 방출하거나, 쇼트키 에미터에 사용되는 지르코니아(ZrO2) 등 확산보급원으로 둘러싼 텅스텐 탐침 연결 필라멘트 확산온도를 1400K 이하로 낮추면서도 (100)면으로 산화막을 확산하여, 역시 고휘도 전자빔을 방출하는 고효율 냉전계 전자원 특성을 나타낸다. The present invention relates to a high-brightness cold field electron source implementing a cold field emitter (CFE) method by lowering the work function of a tungsten (100) crystal plane, and the cold field electron source of the present invention is a tungsten probe in a cold field electron source. After flashing, the work function is lowered on the (100) plane to emit a high-brightness electron beam, or a tungsten probe connected filament surrounded by a diffusion source such as zirconia (ZrO2) used in a Schottky emitter while lowering the diffusion temperature to 1400K or less. By diffusing an oxide film on the (100) plane, it also exhibits a high-efficiency cold-field electron source that emits a high-brightness electron beam.

Method of preparing an ultra sharp tip and use of an apparatus therefor

Matrix type cold cathode electron source device

A kind of backlight source module of liquid crystal display device

本发明提供一种液晶显示装置的背光源模组，省略了隔离柱的使用，极大的降低了背光源结构的复杂程度，制作工艺极其简单，降低了制造成本，同时，阴极基板与阳极基板的间距由背光源框架两侧的可调节凸台决定，可适应多种应用场景背光源的要求。

Micro-field emitter device for flat panel display

A device and method for forming a device including electron emitters. The method includes exposing a first face of a sheet of bundled fiber segments to a reactive liquid to allow first ends of the fiber segments to react with the reactive liquid to remove material therefrom. A coating material is deposited on the first face which has the material removed. The method also includes exposing a second face of the sheet of bundled fiber segments to a reactive liquid to allow second ends of the fiber segments to react with the reactive liquid to remove material therefrom to expose the coating material.

Catalyst particles on a tip

Techniques for forming metal catalyst particles on a metal tip, and nanostructures on a metal tip are provided.

Diamond/carbon nanotube structures for efficient electron field emission

本发明涉及用金刚石碳或类金刚石碳涂覆的纳米管，包括该纳米管的场致发射体阴极以及包括阴极的场致发射体。还涉及通过用金刚石或类金刚石涂覆纳米管阻止碳从包含纳米管组成阴极的场致发射体汽化的方法。在另一方面，本发明涉及阻止碳从包含纳米管组成阴极的电子场致发射体汽化的方法，该方法包括用金刚石或类金刚石涂覆的纳米管。

Organic field emission device

A patterned field emission device fabricated using conducting or semiconducting organic materials is described.

Diamond electron source and method for manufacturing the same

A diamond electron source in which a single sharpened tip is formed at one end of a pillar-shaped diamond monocrystal of a size for which resist application is difficult in a microfabrication process, as an electron emission point used in an electron microscope or other electron beam device, and a method for manufacturing the diamond electron source. One end of a pillar-shaped diamond monocrystal 10 is ground to form a smooth flat surface 11, and a ceramic layer 12 is formed on the smooth flat surface 11. A thin-film layer 14 having a prescribed shape is deposited on the ceramic layer 12 using a focused ion beam device, after which the ceramic layer 12 is patterned by etching using the thin-film layer 14 as a mask. A single sharpened tip is formed at one end of the pillar-shaped diamond monocrystal 10 by dry etching using the resultant ceramic mask.

Field emission electron source having carbon nanotube and manufacturing method thereof

A field emission electron source ( 10 ) includes a conductive base ( 12 ), a carbon nanotube ( 14 ), and a film of metal ( 16 ). The conductive base includes a top ( 122 ). One end ( 142 ) of the carbon nanotube is electrically connected with the top of the conductive base. The other end ( 144 ) of the carbon nanotube extends outwardly away from the top of the conductive base. The film of metal is formed on the nearly entire surface of the carbon nanotube and at least on the portion of the top of the conductive base proximate the carbon nanotube. A method for manufacturing the described field emission electron source is also provided.

Ion source

IRIDIUM TIP, FIELD ION SOURCE, FOCUSED ION BEAM SETUP, ELECTRON SOURCE, ELECTRON MICROSCOPE, EQUIPMENT FOR ANALYSIS USING AN ELECTRON BEAM, ION ELECTRON MULTIPLE BEAM INSTALLATION, ABUTATING TAPE MICROSCOPE AND MASK REPAIRING DEVICE

Es ist eine Iridium-Spitze bereitgestellt, welche einen Pyramiden-Aufbau umfasst, welcher eine {100} Kristallebene als eine von einer Mehrzahl von Pyramidenflächen in einem angespitzten Scheitelpunkt-Abschnitt eines Einzelkristalls mit einer <210> Ausrichtung hat. Die Iridium-Spitze wird bei einer Gasfeld-Ionenquelle oder einer Elektronenquelle angewendet. Die Gasfeld-Ionenquelle und/oder die Elektronenquelle wird bzw. werden bei einer Einrichtung eines fokussierten Ionenstrahls, einem Elektronenmikroskop, einer Einrichtung zur Analyse unter Anwendung eines Elektronenstrahls, einer Ionen-Elektronen-Mehrfachstrahl-Einrichtung, einem Rastersondenmikroskop oder einer Masken-Reparatureinrichtung angewendet.

Electron-emitting device

A method of manufacturing an electron-emitting element ( 20 ) for emitting electrons from diamond includes the first step of forming a diamond columnar member ( 25 ) on a diamond substrate ( 21 ), and the second step of forming an electron-emitting portion ( 30 ) having a base portion ( 36 ) and a sharp-pointed portion ( 32 ) which is located closer to a distal end side than the base portion ( 36 ) and emits the electrons by performing etching processing with respect to the columnar member ( 25 ).

METHOD FOR PRODUCING AN EMITTING ELECTRON OF THE INSTRUMENT AND METHOD FOR PRODUCING AN IMAGE DISPLAY DEVICE

1. Способ изготовления эмитирующего электроны прибора, включающего в себя эмитирующий электроны элемент, который включает в себя структуру, содержащую металл, и лежащий поверх этой структуры слой с низкой работой выхода, выполненный из материала с меньшей работой выхода, чем работа выхода этого металла, и который осуществляет автоэлектронную эмиссию с поверхности, причем способ содержит: ! обеспечение структуры, содержащей металл, на которой был сформирован слой оксида металла, содержащий оксид того же металла, что и металл, содержащийся в этой структуре; и ! обеспечение слоя с низкой работой выхода на слое оксида металла. ! 2. Способ по п.1, в котором слой с низкой работой выхода выполняют из поликристаллического борида лантана. ! 3. Способ по п.2, в котором слой оксида металла содержит лантан. ! 4. Способ по п.3, дополнительно содержащий обеспечение слоя оксида лантана на слое с низкой работой выхода. ! 5. Способ по п.4, в котором слой оксида лантана выполняют из триоксида дилантана. ! 6. Способ по п.1, в котором металлом является молибден, а слой оксида металла содержит оксид молибдена и оксид лантана. ! 7. Способ по п.1, в котором металлом является вольфрам, а слой оксида металла содержит оксид вольфрама и оксид лантана. ! 8. Способ изготовления эмитирующего электроны прибора, содержащий: ! формирование электропроводной пленки, содержащей металл, на изолирующем слое, имеющем угловую часть и боковую поверхность, соединенную с угловой частью, и верхнюю поверхность, таким образом, что электропроводная пленка простирается по боковой поверхности и верхней поверхности изолирующего слоя и частично покрывает угловую часть; ! тра РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2009 144 566 (13) A (51) МПК H01J 3/00 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ЗАЯВКА НА ИЗОБРЕТЕНИЕ (21)(22) Заявка: 2009144566/07, 01.12.2009 (71) Заявитель(и): КЭНОН КАБУСИКИ КАЙСЯ (JP) (72) Автор(ы): АОКИ Наофуми (JP), НИСИДА Содзи (JP) (43) Дата ...

Electron gun emitting under high voltage, in particular for electron microscopy

Field emission device

Eine Feldemissionsvorrichtung mit einer einen Emissionsbereich (1) für Elektronen (2) aufweisenden Kathode (3) ist im Hinblick auf die Erzeugung technisch nutzbarer Elektronenströme bei möglichst geringer Spannung derart ausgestaltet, dass der Emissionsbereich (1) eine Anordnung aus mehreren einzeln positionierten oder positionierbaren Atomen (4) oder Molekülen aufweist. A field emission device with a cathode (3) having an emission region (1) for electrons (2) is designed with the lowest possible voltage for producing technically usable electron currents such that the emission region (1) is an arrangement of a plurality of individually positioned or positionable atoms (4) or molecules.

Charged particle beam source

A charged particle beam source, such as for use in an electron microscope, can include an electrically conductive support member coupled to a base, a mounting member coupled to the support member and defining a bore, and an emitter member received in the bore and retained by a fixative material layer flowed around the emitter member in the bore.

Field emission electron source and preparation method thereof

本发明提供了一种场发射电子源，包括WO 3 纳米线、单晶钨丝、固定导电层、发叉钨丝、基座与金属触角；所述基座上设置有金属触角，所述金属触角的一端与所述发叉钨丝的一端连接，所述单晶钨丝圆柱状区域的一端与所述发叉钨丝的另一端连接，所述单晶钨丝尖端平台区域上通过固定导电层固定有WO 3 纳米线。本申请还提供了一种场发射电子源的制备方法。本申请场发射电子源中WO 3 纳米线的引入，使其具有较高的亮度、高发射寿命和高发射稳定性。

Field emission tips and methods for fabricating the same

The present invention relates to field emitters and methods of fabricating the same wherein the field emission tips of the field emitters are formed by utilization of a facet etch. An etch mask is patterned on a conductive substrate in the locations desired for subsequently formed field emission tips. The conductive substrate is then anisotropically etched to translate the shape of the mask into the conductive substrate which forms a vertical column from the conductive substrate. The etch mask is then removed and the vertical column is facet etched to form the field emission tip. Low work function materials may also be incorporated into the field emission tips to improve field emission tip performance by depositing a layer of low work function material on the conductive substrate prior to patterning the etch mask. Furthermore, a sacrificial layer may be utilized to assist the removal of any redeposition materials formed during the facet etch by depositing the sacrificial material over the vertical column prior to facet etching. After facet etching, the redeposition material may be removed using a known clean-up technique.

Electric field discharge-type electron source

전계 방출형 전자원의 수명을 연장하기 위해 확산 보급원(1)인 지르코니아의 용적 또는 중량을 증가하면, 확산 보급원(1) 자체나 텅스텐 바늘(2)에 손상을 주기 쉬워진다는 과제가 있다. 또한, 과제로서, 상기 과제를 피하기 위해 확산 보급원(1)을 박막으로 형성하는 것도 생각할 수 있지만, 8,000시간을 초과하는 실용적인 수명을 안정적으로 얻는 것은 곤란하다. 따라서, 본 발명은 확산 보급원(1)의 절결(결함)이나 깨짐이 없고, 소량의 확산 보급원(1)의 증량으로 수명을 연장 가능한 전계 방출형 전자원을 제공하고, 8,000시간을 초과하는 실용적인 수명을 안정적으로 얻는 것을 명확히 하였다.

Microtip vacuum field emitter structures, arrays, and devices, and methods of fabrication

Device comprising nanostructures and method of manufacturing thereof

A method for manufacturing of a device (300, 410-412) comprising a substrate (201) comprising a plurality of sets of nanostructures (207) arranged on the substrate, wherein each of the sets of nanostructures is individually electrically addressable, the method comprising the steps of: providing (101) the substrate (200) having a first (202) face, the substrate having an insulating layer (210) comprising an insulating material arranged on the first face (202) of the substrate forming an interface (203) between the insulating layer and the substrate; providing (102) a plurality of stacks (204) on the substrate, the stacks being spaced apart from each other, wherein each stack comprises a first conductive layer (205) comprising a first conductive material and a second conductive layer (206) comprising a second conductive material different from the first material, the second conductive layer being arranged on the first conductive layer for catalyzing nanostructure growth; heating (103) the substrate having the plurality of stacks arranged thereon in a reducing atmosphere to enable formation of nanostructures on the second conductive material; heating (103) the substrate having the plurality of stacks (204) arranged thereon in an atmosphere such that nanostructures (207) are formed on the second layer (206); wherein the insulating material and the first conductive material are selected such that during the heating steps, the first conductive material interacts with the insulating material to form an electrically conductive portion (208) within the insulating layer (201) below each of the stacks (204), wherein the electrically conductive portion comprises a mixture of the first conductive material and the insulating material and/or reaction adducts thereof.

Device comprising nanostructures and method of manufacturing thereof

A method for manufacturing of a device (300, 410-412) comprising a first substrate (201) comprising a plurality of sets of nanostructures (207) arranged on the first substrate, wherein each of the sets of nanostructures is individually electrically controllable, the method comprising the steps of: providing (101) a first substrate (201) having a first (202) and a second (203) face, wherein the substrate comprises an insulating material; providing (102) a plurality of stacks (204) on the first substrate, the stacks being spaced apart from each other, wherein each stack comprises a first layer (205) comprising a first material and a second layer (206) comprising a second material different from the first material, the second layer being arranged on the first layer, and wherein the second material catalyses the formation of nanostructures thereon; heating (103) the first substrate having the plurality of stacks arranged thereon in an atmosphere such that nanostructures are formed on the second layer and such that the first material diffuses or mixes into the first substrate and/or reacts with the insulating material to form an electrical portion (208) within the first substrate below each of the stacks, wherein the electrical portion is electrically conductive and/or semi-conductive and comprises a mixture of the first material and the insulating material and/or reaction adducts thereof, each of the electrical portions thereby allowing for individual electrical control of a respective one of the set of nanostructures.

Electron emission source composition for flat panel display and method of producing electron emission source for flat panel display using the same

Disclosed is an electron emission source composition for a flat panel display using the same, comprising carbon nanotubes, a vehicle, and an organotitanium or an organometallic compound, and a method of producing the electron emission source composition having improved adherent strength with the substrate and providing stable and uniform electron emitting characteristics.