Dynamic compensation of non-linear electron beam landing angle in variable axis lenses

A dynamic correction arrangement for an electron beam projection/deflection system provides high order correction values for deflection in accordance with a correction equation. Particularly as applied to high accuracy telecentric deflection, the coefficients of terms of the correction equation may be determined by calibration for a small number of test points. Correction values may be stored in a look-up table or computed in real time by using a math co-processor in a processing pipeline. The correction provided corrects landing angle errors through the third order in telecentric projection/deflection systems such as systems utilizing variable axis immersion lenses.

High Current Density Particle Beam System

The present invention relates to charged particle beam devices. The devices comprise an emitter for emitting charged particles; an aperture arrangement with at least two apertures for separating the emitted charged particles into at least two independent charged particle beams; and an objective lens for focusing the at least two independent charged particle beams, whereby the independent charged particle beams are focused onto the same location within the focal plane.

Electron beam apparatus and electrom beam adjusting method

An electron beam apparatus 10 for irradiating a target 12 with an electron beam includes a reference sample 50 including at least one reference pattern (Fig. 14) which has a plurality of lattice structures (56D) arranged along the circumference of a circle in a evaluation surface of the reference sample 50; and an adjustment section (Fig. 3,38) for adjusting the electron beam by irradiating the evaluation surface with the electron beam on the basis of electrons generated from the reference sample 50 and detected by electron detector 34. Such an electron beam apparatus could be for drawing, measuring, etching, or could be an electron microscope.

Electron beam apparatus and electron beam adjusting method

PROJEKTIONSSYSTEM FUER GELADENE TEILCHEN

Charged particle system for processing a target surface

The invention relates to a charged particle system for processing a target surface with at least one charged particle beam. The system comprises an optical column with a beam generator module for generating a plurality of charged particle beams, a beam modulator module for switching on and off said plurality of beams and a beam projector module for projecting beams or subbeams on said target surface. The system further comprises a frame supporting each of said modules in a fixed position and alignment elements for aligning at least one of beams and/or subbeams with a downstream module element.

ASSEMBLY FOR PROVIDING AN ALIGNED STACK OF TWO OR MORE MODULES AND A LITHOGRAPHY SYSTEM OR A MICROSCOPY SYSTEM COMPRISING SUCH AN ASSEMBLY

The invention relates to an assembly, preferably for use in a lithography system or a microscopy system, for providing an accurately aligned stack of two or more modules (50) in a stacking direction. Each of the two or more modules comprises three support members (51). The assembly comprises a frame comprising three planar alignment surfaces (61) which extend in the stacking direction and which are angularly off-set with respect to each other. In addition, each of the three support members of each one of the two or more modules, when arranged in said frame, abuts against a corresponding one of the three alignment surfaces. The frame is provided with an opening between two of the three planar alignment surfaces for inserting a module in the assembly, said two planar alignment surfaces on either side of the opening are arranged at least partially facing said opening.

Methods for determining focus and astigmatism in charged-particle-beam microlithography

Evaluation methods are disclosed for evaluating the image-forming performance of charged-particle-beam microlithography systems, especially with regard to astigmatism and focus. In an embodiment, a subfield containing an evaluation pattern is subdivided into multiple regions. In the various regions, the respective line-and-space (L/S) pattern elements are oriented such that the elements in one region extend in a direction that intersects the direction, in the object plane of orientation of the pattern element in another region. The evaluation pattern is transferred lithographically to a resist film on a substrate. The developed resist, when observed at a magnification at which individual L/S pattern elements are not resolved, reveals a "shadow region" having a particular profile. The profile is a function of one or more parameters (e.g., astigmatism and focus) of image-forming performance.

MULTI-BEAM INSPECTION APPARATUS

A multi-beam inspection apparatus including an improved source conversion unit is disclosed. The improved source conversion unit may comprise a micro-structure deflector array including a plurality of multipole structures. The micro-deflector deflector array may comprise a first multipole structure having a first radial shift from a central axis of the array and a second multipole structure having a second radial shift from the central axis of the array. The first radial shift is larger than the second radial shift, and the first multipole structure comprises a greater number of pole electrodes than the second multipole structure to reduce deflection aberrations when the plurality of multipole structures deflects a plurality of charged particle beams.

SPHERICAL ABERRATION CORRECTION MODERATING TYPE LENS, SPHERICAL ABERRATION CORRECTION LENS SYSTEM, ELECTRON SPECTROSCOPY DEVICE, AND OPTICAL ELECTRON MICROSCOPE

A spherical aberration correction decelerating lens corrects a spherical aberration occurring in an electron beam or an ion beam (hereinafter, referred to as "beam") emitted from a predetermined object plane position with a certain divergence angle, and said spherical aberration correction decelerating lens comprises at least two electrodes, each of which is constituted of a surface of a solid of revolution whose central axis coincides with an optical axis and each of which receives an intentionally set voltage applied by an external power supply, wherein at least one of the electrodes includes one or more meshes (M) which has a concaved shape opposite to an object plane (P0) and which is constituted of a surface of a solid of revolution so that a central axis of the concaved shape coincides with the optical axis, and a voltage applied to each of the electrodes causes the beam to be decelerated and causes formation of a decelerating convergence field for correcting the spherical aberration ...

Mechanically adjustable electrostatic lens

The electrostatic lens (2) is in the form of a ring that has a number of sector electrodes (4) that each cover a specific angular segment. Deformable elements (14) connect the different segments together. Each of the segments has an adjuster (5) that allows individual adjustment.

ELECTRON-OPTICALLY KORREKTOR FOR APLANATI IMAGING SYSTEMS

BARREL FOR CHARGED PARTICLES

CORRECTION LENS SYSTEM FOR PARTICLE RADIATION PROJECTION EQUIPMENT

ELECTRON-OPTICAL CORRECTOR FOR AN APLANATIC IMAGING SYSTEM

The invention relates to an electron-optical corrector for rendering superfluous both the third-order opening error and the anisotropic (azimutal) part of the extraaxial third-order coma, using round lenses and hexapole fields, the corrector consisting of at least three coaxially arranged hexapole fields. At least one round lens field is arranged between adjacent hexapole fields in such a way that the hexapole fields are imaged onto each other in pairs, and the intensities of the hexapole fields are selected in such a way that the image error coefficient of the threefold astigmatism is equal to 0, and at least three hexapole fields in the Larmor reference system are rotated in relation to each other at a certain angle about the optical axis.

DIAGNOSTIC SYSTEM FOR PROFILING MICRO-BEAMS

An apparatus for characterization of a micro beam comprising a micro modified Faraday cup assembly including a first layer of material, a second layer of material operatively connected to the first layer of material, a third layer of material operatively connected to the second layer of material, and a fourth layer of material operatively connected to the third layer of material. The first layer of material comprises an electrical conducting material and has at least one first layer radial slit extending through the first layer. An electrical ground is connected to the first layer. The second layer of material comprises an insulating material and has at least one second layer radial slit corresponding to the first layer radial slit in the first layer of material. The second layer radial slit extends through the second layer. The third layer of material comprises a conducting material and has at least one third layer radial slit corresponding to the second layer radial slit in the second ...

POST-DECEL MAGNETIC ENERGY FILTER FOR ION IMPLANTATION SYSTEMS

A MULTIPLE BEAM CHARGED PARTICLE OPTICAL SYSTEM

The invention relates to a multiple beam charged particle optical system, comprising an electrostatic lens structure with at least one electrode, provided with apertures, wherein the effective size of a lens field effected by said electrode at a said aperture is made ultimately small. The system may comprise a diverging charged particle beam part, in which the lens structure is included. The physical dimension of the lens is made ultimately small, in particular smaller than one millimeter, more in particular less than a few tens of micrometers. In further elaboration, a lens is combined with a current limiting aperture (CLA), aligned such relative to a lens of said structure, that a virtual aperture (VA) effected by said current limiting aperture in said lens is situated in an optimum position with respect to minimizing aberrations total. © KIPO & WIPO 2009 ...

Charged particle system for processing a target surface

Device and method for forming a plurality of charged particle beamlets

Disclosed herein is charged particle beam device and a a method of operating a charged particle beam device, comprising forming a plurality of focused charged particle beamlets. Charged particles are directed from a charged particle source to a multi-aperture plate. A plurality of beamlets are passed through a plurality of apertures of the multi-aperture plate. The beamlets include an inner beamlet of charged particles and a plurality of outer beamlets of charged particles. The outer beamlets are focused to form a plurality of outer focal points on a virtual ring having a center along an optical axis, the outer beamlets subjected to a field curvature aberration, such that the virtual ring is axially displaced relative to a virtual focal point of an uncompensated inner beamlet. A compensated inner beamlet is focused to a compensated focal point. The inner beamlet is compensated to form the compensated inner beamlet; and the compensated focal point is coplanar with the virtual ring.

Multiple electron beam inspection apparatus and multiple electron beam inspection method

A multiple electron beam inspection apparatus includes a correction circuit that corrects a partial secondary electron image of partial secondary electron images configuring a secondary electron image and obtained by irradiation with a corresponding primary electron beam of the multiple primary electron beams such that the partial secondary electron image becomes close to a uniform beam partial image when an irradiation region of a primary electron beam corresponding to the partial secondary electron image is irradiated with a uniform beam obtained by equalizing shapes and sizes of all primary electron beams, by using a function for individual correction of each primary electron beam, for each of the plural partial secondary electron images, and an inspection circuit that performs inspection using plural partial secondary electron images each corrected.

Charged-particle beam apparatus equipped with aberration corrector

Particle-beam apparatus is realized which is equipped with an aberration corrector capable of controlling the angular aperture of a particle beam after performing aberration correction. The corrector comprises four stages of electrostatic quadrupole elements, two stages of magnetic quadrupole elements for superimposing a magnetic potential distribution analogous to the electric potential distribution created by the two central stages of the electrostatic quadrupole elements, and four stages of electrostatic octupole elements for superimposing an octupole electric potential on the electric potential distribution created by the four stages of electrostatic quadrupole elements. An objective lens is located downstream of the corrector. An objective aperture is located upstream of the corrector. An angular aperture control lens is located downstream of the objective aperture to control the angular aperture of the probe hitting a specimen surface.

Technique for reducing pattern placement error in projection electron-beam lithography

Electron-beam lithography systems used for transferring images from subfields (302,304,306) in a reticle (102) to a wafer (106). Deflection systems in the electronic lens system (104) are controlled by control systems that include devices to correct misalignment of the electron beams from each of the subfields with the electronic optical axis. In a first embodiment, switches (502,506) switch between sources (503,507) to deflect the electron beams to the electronic optical axis (130) and error DACs (504,508) correct position errors in the sources that are input to the switches. In a second embodiment, the deflection systems deflect the electronic optical axis (130) to coincide with the electron beams from the subfields. In other embodiments, the deflection systems in the electronic lens systems are made insensitive to position errors in deflection control systems by satisfying the condition: G1/G2 = M, where G1 is the gain of first amplifier (606) amplifying a signal from a DAC (602) which ...

Electron beam apparatus and electron beam adjusting method

CHARGED PARTICLE SYSTEM FOR PROCESSING A TARGET SURFACE

The invention relates to a charged particle system for processing a target surface with at least one charged particle beam. The system comprises an optical column with a beam generator module for generating a plurality of charged particle beams, a beam modulator module for switching on and off said plurality of beams and a beam projector module for projecting beams or subbeams on said target surface. The system further comprises a frame supporting each of said modules in a fixed position and alignment elements for aligning at least one of beams and/or subbeams with a downstream module element.

Analyzing electromagnet

In an analyzing electromagnet 40, each of magnetic poles 80 in which the plan-view shape is curved is divided along the traveling direction of an ion beam 2 into three partial magnetic poles 81 to 83. The gaps of the first and third partial magnetic pole pairs 81, 83 as counted from the inlet for the ion beam 2 are widened toward the outside of the curvature, and the gap of the second partial magnetic pole pair 82 is widened toward the inside of the curvature.

ELECTRON MICROSCOPE AND COMPOSITE IRRADIATION LENS

An electron microscope capable of re-constructing a microscope image free of the imaging aberration due to the imaging lens by using a hologram of diffraction pattern and a composite irradiation lens used in such an electron microscope. The electron microscope comprises an electron source (11), a condenser lens (12), a biprism (13) for splitting an electron beam fed from the condenser lens (12) into first and second coherent electron beams (L1, L2) parallel to each other, a composite irradiation lens (15) for making the first electron beam (L1) a parallel wave and making the second electron beam (L2) a converging wave converging at a predetermined distance, a specimen stage (16) for holding a specimen irradiated with the first electron beam (L1), a detector (17) for detecting a hologram of the diffraction pattern formed by the interference between the first and second electron beams (L1, L2), a computing unit (18) for re-constructing a microscope image of the specimen by subjecting the ...

Ion deflector for two-dimensional control of ion beam cross sectional spread

An ion deflector, for deflecting a beam of charged particles along an arc in a deflection plane, includes a pair of non-spherical deflection electrodes adapted for being charged with different voltages. The pair of deflection electrodes are configured to control, in both the deflection plane and in a direction perpendicular to the deflection plane, a cross sectional spread of charged particles in a deflected beam that exits the ion deflector. In some embodiments, a first electrode has a first height perpendicular to the deflection plane and a second electrode has a different second height.

Achromatic beam deflector, achromatic beam separator, charged particle device, method of operating an achromatic beam deflector, and method of operating an achromatic beam separator

An achromatic beam separator device for separating a primary charged particle beam from another charged particle beam and providing the primary charged particle beam on an optical axis (142) is provided, including a primary charged particle beam inlet (134), a primary charged particle beam outlet (132) encompassing the optical axis, a magnetic deflection element (163) adapted to generate a magnetic field, and an electrostatic deflection element (165) adapted to generate an electric field overlapping the magnetic field, wherein at least one element chosen from the electrostatic deflection element and the magnetic deflection element is positioned and/or positionable to compensate an octopole influence.

A multiple beam charged particle optical system

The invention relates to a multiple beam charged particle optical system, comprising an electrostatic lens structure with at least one electrode, provided with apertures, wherein the effective size of a lens field effected by said electrode at a said aperture is made ultimately small. The system may comprise a diverging charged particle beam part, in which the lens structure is included. The physical dimension of the lens is made ultimately small, in particular smaller than one mm, more in particular less than a few tens of microns. In further elaboration, a lens is combined with a current limiting aperture, aligned such relative to a lens of said structure, that a virtual aperture effected by said current limiting aperture in said lens is situated in an optimum position with respect to minimizing aberrations total.

MULTIPOLE LENS FOR MICROCOLUMN

The present invention relates to an electron lens for use in an microcolumn, and more particularly to a multipole electron lens wherein the electron lens includes two or more electrode layers, each of the electrode layers has a slit extending from a central axis through which an electron beam passes, and the two electrode layers are aligned on an electron optical axis such that the slits are staggered with each other. Further, the present invention relates to a microcolumn using the multipole lens. The multipole lens according to the present invention can be manufactured and controlled in a simple fashion, reduces blurring of the focus of the microcolumn, and increases an active deflective area.

CHARGED PARTICLE PROJECTOR SYSTEM

A charged particle, in particular ion projector system, has a mask arranged in the path of the charged particle beam and provided with transparent spots, in particular openings, arranged asymmetrically to the optical axis, which are reproduced on a wafer by means of lenses arranged in the path of the charged particle beam. The charged particle beam has at least one cross-over (crosses the optical axis at least once) between the mask and the wafer. Charged particles with an opposite charge to the charge of the reproduction particles are supplied into the path of the reproduction charged particle beam in a defined area located between the mask and the wafer. The limits that define said area are selected in such a way that the absolute value of the integral effect of the space charge on the particles that reproduce the mask structures is as high upstream of said area (seen in the direction of radiation) as the absolute value of the integral effect of the space charge downstream of said area ...

ION DEFLECTOR FOR TWO-DIMENSIONAL CONTROL OF ION BEAM CROSS SECTIONAL SPREAD

An ion deflector, for deflecting a beam of charged particles along an arc in a deflection plane, includes a pair of non-spherical deflection electrodes adapted for being charged with different voltages. The pair of deflection electrodes are configured to control, in both the deflection plane and in a direction perpendicular to the deflection plane, a cross sectional spread of charged particles in a deflected beam that exits the ion deflector. In some embodiments, a first electrode has a first height perpendicular to the deflection plane and a second electrode has a different second height.

DIAGNOSTIC SYSTEM FOR PROFILING MICRO-BEAMS

Un appareil de caractérisation d'un micro-faisceau comprenant un micro-ensemble de chambre d'ionisation de Faraday modifié comprenant une première couche de matière, une deuxième couche de matière connectée opérationnellement sur la première couche de matière, une troisième couche de matière connectée de façon opérationnelle sur la seconde couche de matière, et une quatrième couche de matière connectée de manière opérationnelle sur la troisième couche de matière. La première couche de matière comporte une matière conductrice d'électricité et présente au moins une première fente radiale s'étendant à travers la première couche. Une masse électrique est connectée à la première couche. La deuxième couche de matière renferme une matière d'isolation et présente au moins une seconde fente radiale correspondant à la première fente radiale de la première couche de matière. La deuxième fente radiale s'étend à travers la deuxième couche. La troisième couche de matière renferme une matière conductrice ...

SPHERICAL ABERRATION CORRECTION DECELERATING LENS, SPHERICAL ABERRATION CORRECTION LENS SYSTEM, ELECTRON SPECTROMETER, AND PHOTOELECTRON MICROSCOPE

A spherical aberration correction decelerating lens corrects a spherical aberration occurring in an electron beam or an ion beam (hereinafter, referred to as "beam") emitted from a predetermined object plane position with a certain divergence angle, and said spherical aberration correction decelerating lens comprises at least two electrodes, each of which is constituted of a surface of a solid of revolution whose central axis coincides with an optical axis and each of which receives an intentionally set voltage applied by an external power supply, wherein at least one of the electrodes includes one or more meshes (M) which has a concaved shape opposite to an object plane (P0) and which is constituted of a surface of a solid of revolution so that a central axis of the concaved shape coincides with the optical axis, and a voltage applied to each of the electrodes causes the beam to be decelerated and causes formation of a decelerating convergence field for correcting the spherical aberration ...

ATOM PROBE INSPECTION DEVICE, FIELD ION MICROSCOPE, AND DISTORTION CORRECTION METHOD

According to one embodiment, an atom probe inspection device includes one or more processors configured to change a two-dimensional position of a detected ion, detect two-dimensional position information of the ion and a flying time of the ion, identify a type of an element of the ion, generate first information under a first condition and second information under a second condition, and generate a reconstruction image of the sample from the first information and the second information.

Diagnostic system for profiling micro-beams

An apparatus for characterization of a micro beam comprising a micro modified Faraday cup assembly including a first layer of material, a second layer of material operatively connected to the first layer of material, a third layer of material operatively connected to the second layer of material, and a fourth layer of material operatively connected to the third layer of material. The first layer of material comprises an electrical conducting material and has at least one first layer radial slit extending through the first layer. An electrical ground is connected to the first layer. The second layer of material comprises an insulating material and has at least one second layer radial slit corresponding to the first layer radial slit in the first layer of material. The second layer radial slit extends through the second layer. The third layer of material comprises a conducting material and has at least one third layer radial slit corresponding to the second layer radial slit in the second ...

Electron Microscope and Combined Illumination Lens

An object of the present invention is to provide an electron microscope that employs a hologram of a diffraction pattern to reconstruct a microscopic image involving no imaging aberration due to image forming lenses, as well as a combined illumination lens used for such an electron microscope. The electron microscope according to the present invention has an electron source ( 11 ), a condenser lens ( 12 ), a biprism ( 13 ) to split an electron beam supplied from the condenser lens ( 12 ) into coherent first and second electron beams (L 1 , L 2 ) that are parallel to each other, a combined illumination lens ( 15 ) to make the first electron beam (L 1 ) into a parallel wave and the second electron beam (L 2 ) into a converging wave that converges at a predetermined distance, a sample stage ( 16 ) to hold a sample illuminated with the first electron beam (L 1 ), a detector ( 17 ) to detect a hologram of a diffraction pattern formed by interference of the first electron beam (L 1 ) with the ...

A DETECTOR SUBSTRATE FOR USE IN A CHARGED PARTICLE MULTI-BEAM ASSESSMENT TOOL

PARTICLE MULTIBEAM LITHOGRAPHY

PROBLEM TO BE SOLVED: To make individual imaging aberrations of respective sub-beam equivalent substantially over the entire row of sub-beam by correcting them with respect to a desired target position and/or positioning the sub-beam during a wiring process on the substrate surface. SOLUTION: In order to adjust focus concentration of a sub-beam individually, especially with respect to the diameter and position of the beam on the substrate surface, several electrostatic lenses 109 are arranged at respective apertures. Each sub-beam is provided with one deflection unit 110 which is disposed between the final aperture and the basic material and formed as an electrostatic multi-electrode. Furthermore, a reference plate 111 is disposed above the basic material. These electrostatic multi-electrodes 110 can theoretically adjust each sub-beams 107 independently from other sub-beams for a specific spot on a wafer basic material 120. COPYRIGHT: (C)2000,JPO ...

Charged particle beam writing apparatus, charged particle beam writing method, and pattern forming method

In one embodiment, a charged particle beam writing apparatus includes an estimator calculating an estimated value of a process parameter of a processing device at a scheduled timing at which a substrate as an object of pattern correction is processed in the processing device from a history of the process parameter of the processing device which performs a process after pattern writing, a predictor predicting dimension distribution of a pattern formed on the substrate by the processing device performing the process with the estimated value, a corrector correcting a design dimension based on the predicted dimension distribution, and a writer irradiating the substrate with a charged particle beam and writing the pattern based on the dimension corrected by the corrector.

Variable curvilinear axis deflection means for particle optical lenses

An improved particle lens has an axis which is shifted to follow the central ray as it is deflected through the lens creating, in effect, a variable curvilinear optical axis for the lens. The variable curvilinear optical axis is created for the lens so that the axis varies proportionally to the magnitude of the beam deflection. The optical axis of the lens is shifted by applying a uniform field to the lens to cancel the first term of the radial field with a function that is dependent on the position along the z-axis. This function is the trajectory of the central ray of the electron beam.

INSPECTION APPARATUS

Electron optics corrector of third order opening errors and anisotropic azimuthal components of the outer axial coma of the third order uses at least three coaxial hexapolar fields and spherical lenses

An electron optics corrector (2) for removing third order opening errors and anisotropic (azimuthal) components of the off-axis coma of the third order comprises using at least three coaxial hexapolar fields (3,7,8) having at least one spherical lens between each field. The fields are constructed pairwise on one another and their strengths chosen so that the image error coefficient of the third astigmatism is reduced to zero and at least three hexapolar fields in the Lamor reference system are turned relative to one another about the optical axis (28).

Multibeam particle lithography

Multibeam particle lithography apparatus comprising an illumination system 141 having a particle source 103 producing a beam of charged particles such as ions 105 and a multibeam optical system 108 comprising at least one aperture plate 106 having a plurality of apertures to form a plurality of sub-beams 107. The multibeam optical system focuses the sub-beams onto the surface of a substrate 120. A deflection unit 110 is provided for each sub-beam which can correct individual imaging aberrations with respect to the desired target position and/or position the sub-beam during the writing process. A collimator optical system 104 may be provided for producing a beam 105 which is substantially homogeneous across its cross-section. The size and shape of each sub-beam cross-section may be defined by the respective aperture of the first aperture plate. The multibeam optical system may provide a demagnified image of the aperture on the substrate surface with a demagnification factor of at least 20 ...

Particle multibeam lithography

Method and apparatus for determining a wavefront of a massive particle beam

The present application relates to a method (3300) and an apparatus (200) for determining a wavefront (550) of a massive particle beam (225, 510, 1910), including the steps of: (a) recording (3320) two or more images (310-390) of a reference structure (130) using the massive particle beam (225, 510) under different recording conditions (315, 325); (b) generating (3330) point spread functions (1750) for the two or more recorded images (310-390) with a modified reference image (480) of the reference structure (130); and (c) performing (3340) a phase reconstruction of the massive particle beam (225, 510) on the basis of the generated point spread functions (1750) and the different recording conditions (315, 325), for the purposes of determining the wavefront (550).

Charged particle system for processing a target surface

The invention relates to a charged particle system for processing a target surface with at least one charged particle beam. The system comprises an optical column with a beam generator module for generating a plurality of charged particle beams, a beam modulator module for switching on and off said plurality of beams and a beam projector module for projecting beams or subbeams on said target surface. The system further comprises a frame supporting each of said modules in a fixed position and alignment elements for aligning at least one of beams and/or subbeams with a downstream module element.

SPHERICAL ABERRATION CORRECTION MODERATING TYPE LENS, SPHERICAL ABERRATION CORRECTION LENS SYSTEM, ELECTRON SPECTROSCOPY DEVICE, AND OPTICAL ELECTRON MICROSCOPE

Provided is a spherical aberration correction moderating type lens corrects the spherical aberration, which occurs in an electron or ion beam (as will be called the beam) emitted at a constant divergence angle from a predetermined object plane position. The lens has a rotor plane centered on an optical axis, and is equipped with at least two electrodes, to which an arbitrary voltage is to be applied from an external power source. At least one of the electrodes is a mesh (M) having such a concave shape with respect to an object plane (P0) as is shaped into a mesh (M) made of a rotor plane centered on the optical axis. The individual electrodes are caused, by the voltages applied thereto, to moderate the beam and to generate a moderating type convergent electric field for correcting the spherical aberration to occur in that beam. As a result, the spherical aberration correction moderating type lens converges such a beam on an image plane as is emitted from a specimen and as has a high energy ...

CHARGED PARTICLE BEAM APPARATUS

There is provided a charged particle beam apparatus including: a charged particle source; a condenser lens and an object lens for converging a charged particle beam from the charged particle source and irradiating the converged charged particle beam to a specimen; and plural image shift deflectors for deflecting the charged particle beam. In the charged particle beam apparatus, the deflection of the charged particle beam is controlled using first control parameters that set the optical axis of a charged particle beam to a first optical axis that passes through the center of the object lens and enters a predefined position of the specimen, and second control parameters that transform the first control parameters so that the first control parameters set the optical axis of the charged particle beam to a second optical axis having a predefined incident angle different from the incident angle of the first optical axis. 1. A charged particle beam apparatus comprising:a charged particle source for generating a charged particle beam;a specimen mounting table for mounting a specimen;a condenser lens and an object lens for converging the charged particle beam and irradiating the converged charged particle beam to the specimen;a plurality of image shift deflectors for deflecting the charged particle beam;a control unit; anda storage unit,wherein the storage unit stores first control parameters that set the optical axis of a charged particle beam to a first optical axis that passes the object lens center of the object lens and enters a predefined position of the specimen, and second control parameters that transform the first control parameters so that the first control parameters set the optical axis of the charged particle beam from the first optical axis to a second optical axis that enters the specimen with a predefined incident angle different from the incident angle of the first optical axis, andthe control unit controls the deflection of the charged particle beam ...

A multiple beam charged particle optical system

The invention relates to a multiple beam charged particle optical system, comprising a plurality of non-parallel charged particle beamlets, each beamlet having an optical axis, an aperture plate comprising a plurality of apertures, an electrostatic lens structure comprising a corresponding plurality of lens holes for said plurality charged particle beamlets, said aperture plate and said electrostatic lens structure being aligned and arranged in a path of said plurality of non-parallel charged particle beamlets, wherein corresponding apertures of the aperture plate and the electrostatic lens structure are aligned with said optical axes of the corresponding beamlets.

Achromatic beam deflector, achromatic beam separator, charged particle device, method of operating an achromatic beam deflector, and method of operating an achromatic beam separator

An achromatic beam separator device (130) for separating a primary charged particle beam from another charged particle beam and providing the primary charged particle beam on an optical axis (142) is provided, including a primary charged particle beam inlet, a primary charged particle beam outlet encompassing the optical axis (142), a magnetic deflection element (163) adapted to generate a magnetic field (31), and an electrostatic deflection element (165) adapted to generate an electric field overlapping the magnetic field, wherein at least one element chosen from the electrostatic deflection element and the magnetic deflection element is positioned and/or positionable to compensate an octopole influence.

ELECTRON-OPTICAL CORRECTOR FOR AN APLANATIC IMAGING SYSTEM

ELECTRON-OPTICAL CORRECTOR FOR AN APLANATIC IMAGING SYSTEM

The invention relates to an electron-optical corrector for rendering superfluous both the third-order opening error and the anisotropic (azimutal) part of the extraaxial third-order coma, using round lenses and hexapole fields, the corrector consisting of at least three coaxially arranged hexapole fields. At least one round lens field is arranged between adjacent hexapole fields in such a way that the hexapole fields are imaged onto each other in pairs, and the intensities of the hexapole fields are selected in such a way that the image error coefficient of the threefold astigmatism is equal to 0, and at least three hexapole fields in the Larmor reference system are rotated in relation to each other at a certain angle about the optical axis.

CHARGED PARTICLE MICROSCOPE DEVICE AND METHOD FOR ADJUSTING FIELD-OF-VIEW THEREOF

Provided is a method for adjusting a field-of-view of a charged particle microscope device, in which reference data for a sample is set, a plurality of regions of interest are set for the reference data, a rough sampling coordinate group is set for each of the plurality of regions of interest, the sample is irradiated with charged particles based on the sampling coordinate group to obtain a corresponding pixel value group, a plurality of reconstructed images corresponding to the plurality of regions of interest are generated based on the pixel value group, a correspondence relationship among the plurality of regions of interest is estimated based on the plurality of reconstructed images, and the plurality of regions of interest are adjusted based on the correspondence relationship. Here, the sampling coordinate group is set based on the reference data.

CORRECTION LENS SYSTEM FOR A PARTICLE BEAM PROJECTION DEVICE

ENERGY FILTER

PROBLEM TO BE SOLVED: To provide an isochromatic omega-type energy filter with good characteristics by setting the ratio between the distance from a pupil surface to a slit surface and the distance from the outgoing side end surface of the filter to the slit surface to the specific value or more, in order to reduce the energy value difference between the vicinity of the center of an image on the pupil face and a peripheral part. SOLUTION: Form factors determining the basic characteristic of an omega- type energy filter are the radii of rotation R3, R4, angles θ1, θ2, θ3, θ4, and distance L3, L4, L5, LL. L5 is the distance from the outgoing side end face of a magnet M4 on the slit side to a slit surface, and LL is the distance from an image face to the slit surface. When seven parameters R3, R4, L3, L4, L5, LL and deflection angle Φ are changed for obtaining an evaluation function ΔXpD/ri2 to LL/L, the best evaluation function is proved to increase in proportion to LL/L5, so as to obtain ...

Geladene Teilchen verwendendes Mikroskop und Verfahren zur Bildkorrektur damit

Geladene Teilchen verwendendes Mikroskop zur Korrektur von Bildverzerrungen, die durch Drifteffekte des Probenhalters verursacht werden, durch Messung des Korrekturreferenzbildes in einer kürzeren Zeit als bei dem Messbild, Durchführung von Korrekturen, indem die Form des Messbildes mit der Form des Korrekturreferenzbildes verglichen wird, und Verminderung der Verzerrung in den Messbildern. Die Verzerrung wird ausgehend von einer geringeren Anzahl von Bildern korrigiert, ohne dass abgewartet wird, dass sich der Probenhalter nicht mehr bewegt. Die Referenzbilder zur Verzerrungskorrektur wurden an der gleichen Position und bei der gleichen Vergrößerung wie die Messbilder aufgenommen. Um die Drifteffekte zu minimieren, wird das Referenzbild jedoch innerhalb kürzerer Zeit gemessen als für das Messbild erforderlich ist. Die Form des Messbildes wird korrigiert, indem die Form des Referenzbildes und des Messbildes verglichen wird und die Form des Messbildes so korrigiert wird, dass es mit dem ...

Verfahren, Vorrichtung und Computerprogramm zum Bestimmen einer Wellenfront eines massebehafteten Teilchenstrahls

Die vorliegende Anmeldung betrifft ein Verfahren (3300) und eine Vorrichtung (200) zum Bestimmen einer Wellenfront (550) eines massebehafteten Teilchenstrahls (225, 510, 1910) mit den Schritten: (a) Aufnehmen (3320) von zwei oder mehr Bildern (310-390) einer Referenzstruktur (130) mit dem massebehafteten Teilchenstrahl (225, 510) unter verschiedenen Aufnahmebedingungen (315, 325); (b) Erzeugen (3330) von Punktspreizfunktionen (1750) für die zwei oder mehr aufgenommenen Bilder (310-390) mit einem modifizierten Referenzbild (480) der Referenzstruktur (130); und (c) Ausführen (3440) einer Phasenrekonstruktion des massebehafteten Teilchenstrahls (225. 510) basierend auf den erzeugten Punktspreizfunktionen (1750) und den verschiedenen Aufnahmebedingungen (315, 325) zum Bestimmen der Wellenfront (550).

Particle multibeam lithography

Scanning electron microscope and scanning tunneling electron microscope

A scanning tunneling electron microscope comprises an electron lens system with a small lens aberration coefficient to allow three-dimensional observation of 0.1nm atomic sized structures. The scanning tunneling electron microscope further comprises: an aperture whereby an illumination angle may be changed; an illumination electron lens assembly which is capable of changing electron beam probe size and illumination angle; a secondary electron detector; a tunneling electron detector; a forward scattered electron beam detector; a variable focus device; an image computation device which identifies image contrast; an image computation device which computes image sharpness; a computation device which carries out a three-dimensional configuration of the image; and a mixer which mixes a secondary electron signal with a specimen forward scattering electron signal.

CORRECTION LENS SYSTEM FOR A PARTICLE BEAM PROJECTION DEVICE

Disclosed is a correction lens system for a particle beam projection device, comprising at least one first and second magnetic lens (20a, 20b). Several pairs of correction lenses (23, 24, 25) are arranged between the first and second magnetic lens (20a, 20b) and particle beam (1).

Particle beam device comprising an electrode unit

A particle beam device comprises a beam generator for generating a particle beam having charged particles and an electrode unit having a first electrode and a second electrode, wherein the first electrode interacts with the second electrode, in particular for guiding, shaping, aligning or correcting the particle beam. Moreover, the particle beam device comprises a low-pass filter being connected with at least one of: the first electrode and the second electrode, using an electrical connection. Additionally, the particle beam device comprises a mounting unit having an opening for the passage of the particle beam, wherein the at least one low-pass filter, the first electrode and the second electrode are arranged at the mounting unit. The electrode unit may comprise more than two electrodes, for example up to 16 electrodes.

Electron microscope and combined illumination lens

An object of the present invention is to provide an electron microscope that employs a hologram of a diffraction pattern to reconstruct a microscopic image involving no imaging aberration due to image forming lenses, as well as a combined illumination lens used for such an electron microscope. The electron microscope according to the present invention has an electron source (11), a condenser lens (12), a biprism (13) to split an electron beam supplied from the condenser lens (12) into coherent first and second electron beams (L1, L2) that are parallel to each other, a combined illumination lens (15) to make the first electron beam (L1) into a parallel wave and the second electron beam (L2) into a converging wave that converges at a predetermined distance, a sample stage (16) to hold a sample illuminated with the first electron beam (L1), a detector (17) to detect a hologram of a diffraction pattern formed by interference of the first electron beam (L1) with the second electron beam (L2) ...

SCANNING ELECTRON MICROSCOPE AND SCANNING TRANSMISSION ELECTRON MICROSCOPE

A scanning transmission electron microscope according to the present invention includes an electron lens system having a small spherical aberration coefficient for enabling three-dimensional observation of a 0.1 nm atomic size structure. The scanning transmission electron microscope according to the present invention also includes an aperture capable of changing an illumination angle; an illumination electron lens system capable of changing the probe size of an electron beam probe and the illumination angle; a secondary electron detector (9); a transmission electron detector (13); a forward scattered electron beam detector (12); a focusing unit (16); an image processor for identifying image contrast; an image processor for computing image sharpness; a processor for three-dimensional reconstruction of an image; and a mixer (18) for mixing a secondary electron signal and a specimen forward scattered electron signal.

Charged-particle beam apparatus equipped with aberration corrector

Particle-beam apparatus is realized which is equipped with an aberration corrector capable of controlling the angular aperture of a particle beam after performing aberration correction. The corrector comprises four stages of electrostatic quadrupole elements, two stages of magnetic quadrupole elements for superimposing a magnetic potential distribution analogous to the electric potential distribution created by the two central stages of the electrostatic quadrupole elements, and four stages of electrostatic octupole elements for superimposing an octupole electric potential on the electric potential distribution created by the four stages of electrostatic quadrupole elements. An objective lens is located downstream of the corrector. An objective aperture is located upstream of the corrector. An angular aperture control lens is located downstream of the objective aperture to control the angular aperture of the probe hitting a specimen surface. This control lens makes it possible to correct ...

ATOM PROBE DATA PROCESSES AND ASSOCIATED SYSTEMS

The present invention relates to atom probe data processes and associated systems. Aspects of the invention are directed toward a computing system configured to process atom probe data that includes a data set receiving component configured to receive a first three-dimensional data set. The first three-dimensional data set has a first data element structure and is based on data collected from performing an atom probe process on a portion of an atom probe specimen. The system further includes a data set constructing component configured to create a second three-dimensional data set having a second data element structure different than the first data element structure. In selected embodiments, the system can further include a Fourier Transform component configured to perform a Fourier Transform on a portion of the second three-dimensional data set.

A MULTIPLE BEAM CHARGED PARTICLE OPTICAL SYSTEM

An ion implantation system for implanting ions into a workpiece, a method magnetically filtering an ion beam and a method for reducing particle contamination in an ion implantation system

Method and system for reducing charging artifacts in scanning electron microscopy images

A scanning electron microscopy system for mitigating charging artifacts includes a scanning electron microscopy sub-system for acquiring multiple images from a sample. The images include one or more sets of complementary images. The one or more sets of complementary images include a first image acquired along a first scan direction and a second image acquired along a second scan direction opposite to the first scan direction. The system includes a controller communicatively coupled to the scanning electron microscopy sub-system. The controller is configured to receive images of the sample from the scanning electron microscopy sub-system. The controller is further configured to generate a composite image by combining the one or more sets of complementary images.

PROJEKTIONSSYSTEM FÜR GELADENE TEILCHEN

Post-decel magnetic energy filter for ion implantation systems

DATA PROCESSING METHOD, DATA PROCESSING APPARATUS, AND MULTIPLE CHARGED-PARTICLE BEAM WRITING APPARATUS

In one embodiment, a data processing method is for processing data in a writing apparatus performing multiple writing by using multiple beams. The data is for controlling an irradiation amount for each beam. The method includes generating irradiation amount data for each of a plurality of layers, the irradiation amount data defining an irradiation amount for each of a plurality of irradiation position, and the plurality of layers corresponding to writing paths in multiple writing, performing a correction process on the irradiation amounts defined in the irradiation amount data provided for each layer, calculating a sum of the irradiation amounts for the respective irradiation positions defined in the corrected irradiation amount data, comparing the sums between the plurality of layers, and determining whether or not an error has occurred in the correction process based on the comparison result.

Electro-optical element for multiple beam alignment

The invention relates to a charged particle system for processing a target surface with at least one charged particle beam. The system comprises an optical column with a beam generator module for generating a plurality of charged particle beams, a beam modulator module for switching on and off said plurality of beams and a beam projector module for projecting beams or subbeams on said target surface. The system further comprises a frame supporting each of said modules in a fixed position and alignment elements for aligning at least one of beams and/or subbeams with a downstream module element.

Technique for reducing pattern placement error in projection electron-beam lithography

Electron-beam lithography systems used for transferring images from subfields in a reticle to a wafer. Deflection systems in the electronic lens system are controlled by control systems that include devices to correct misalignment of the electron beams from each of the subfields with the electronic optical axis. In a first embodiment, switches switch between sources to deflect the electron beams to the electronic optical axis and error DACs correct position errors in the sources that are input to the switches. In a second embodiment, the deflection systems deflect the electronic optical axis to coincide with the electron beams from the subfields. In other embodiments, the deflection systems in the electronic lens systems are made insensitive to position errors in deflection control systems by satisfying the condition: G1/G2 = M, where G1 is the gain of first amplifier amplifying a signal from a DAC which is input to the deflection system deflecting the electron beams from the subfields, ...

ASSEMBLY FOR PROVIDING AN ALIGNED STACK OF TWO OR MORE MODULES AND A LITHOGRAPHY SYSTEM OR A MICROSCOPY SYSTEM COMPRISING SUCH AN ASSEMBLY

ATOM PROBE DATA PROCESSES AND ASSOCIATED SYSTEMS

The present invention relates to atom probe data processes and associated systems. Aspects of the invention are directed toward a computing system configured to process atom probe data that includes a data set receiving component configured to receive a first three-dimensional data set. The first three- dimensional data set has a first data element structure and is based on data collected from performing an atom probe process on a portion of an atom probe specimen. The system further includes a data set constructing component configured to create a second three-dimensional data set having a second data element structure different than the first data element structure. In selected embodiments, the system can further include a Fourier Transform component configured to perform a Fourier Transform on a portion of the second three- dimensional data set.

Thermal compensation in magnetic field influencing of an electron beam

A device for influencing an electron beam, for example a beam deflecting device in an electron beam lithography machine, comprises a beam influencing coil ( 13 ) operable to influence an electron beam (EB) in the vicinity of the device by way of a magnetic field and a heat dissipation compensating coil ( 14 ) operable to provide a heat output so compensating for any change in heat dissipation of the device due to operation of the beam influencing coil ( 13 )-particularly variable operation to vary the field intensity or to create and remove a field-as to reduce the amount of change, preferably to maintain the net heat dissipation at a constant value. The compensating coil ( 13 ) can be controlled, for example, by measurement ( 19 ) of the heat dissipation of the device and calculating ( 18 ) current supply ( 16 ) to the coil ( 13 ) in dependence on the measured dissipation.

Electron microscope with electron spectrometer

A lens adjustment method and a lens adjustment system (18) which adjust a plurality of multi-pole lenses (11, 12, 13, 14) of an electron spectrometer (8) attached to a transmission electron microscope (1), optimum conditions of the multi-pole lenses are determined through simulation based on a parameter design method using exciting currents of the multi-pole lenses as parameters.

MULTIPOLE LENS FOR MICROCOLUMN

The present invention relates to an electron lens for use in an microcolumn, and more particularly to a multipole electron lens wherein the electron lens includes two or more electrode layers, each of the electrode layers has a slit extending from a central axis through which an electron beam passes, and the two electrode layers are aligned on an electron optical axis such that the slits are staggered with each other. Further, the present invention relates to a microcolumn using the multipole lens. The multipole lens according to the present invention can be manufactured and controlled in a simple fashion, reduces blurring of the focus of the microcolumn, and increases an active deflective area.

Photo-cathode image projection apparatus for patterning a semiconductor device

A photo-cathode image projection apparatus includes a light source for producing an optical beam, a photoelectron mask disposed so as to be irradiated by the optical beam and a photoelectron mask patterned according to a desired pattern with a material that emits photoelectrons in response to irradiation by an optical beam. The apparatus also includes a focusing device for focusing the emitted photoelectrons to form a photoelectron beam focused on the object, an acceleration electrode disposed along the path of the photoelectron beam for accelerating the photoelectrons in the beam, an elongated passage defined in the acceleration electrode to permit passage of a part of the photoelectron beam, and a stage disposed for supporting the object in a position such that the focused photoelectron beam is focused on the object. Also included is a voltage source for applying an acceleration voltage between the photoelectron mask and the acceleration electrode. The acceleration electrode is held at ...

Apparatus and method for ion beam implantation using scanning and spot beams

An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for forming a converging beam on AMU-non-dispersive plane therefrom. The ion implantation apparatus includes magnetic scanner prior to a magnetic analyzer for scanning the beam on the non-dispersive plane, the magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. A rectangular quadruple magnet is provided to collimate the scanned ion beam and fine corrections of the beam incident angles onto a target. A deceleration or acceleration system incorporating energy filtering is at downstream of the beam collimator. A two-dimensional mechanical scanning system for scanning the target is disclosed, in which a beam diagnostic means is build in.

Focussing lens and charged particle beam device for non zero landing angle operation

The present invention relates to focusing lens (2), a charged particle beam device (1) and a method for focussing a charged particle beam (3) onto a specimen whereby the focussing lens (2) comprises an auxiliary electrode (11) having an essentially planar electrode surface (11a) for focussing the charged particle beam (2) at a tilted landing angle (7), whereby said essentially planar electrode surface (11a) includes an auxiliary electrode angle (13) with the optical axis (3) of the focusing lens (2) that is smaller than 80 degrees. With such a focussing lens, it is possible to operate a charged particle beam device at a tilted landing angle where focussing field distortions caused by the tilted landing angle are reduced.

하전 입자 빔 묘화 장치, 하전 입자 빔 묘화 방법 및 패턴 형성 방법

... 본 발명은 묘화 장치, 하전 입자 빔 묘화 방법 및 패턴 형성 방법에 관한 것이다. 본 발명의 일 형태에 의한 하전 입자 빔 묘화 장치는, 패턴 묘화 후의 처리를 행하는 프로세스 장치의 프로세스 파라미터 이력으로부터, 패턴 보정 대상의 기판이 상기 프로세스 장치에서 처리될 예정 시기에 있어서의 프로세스 파라미터의 추정값을 산출하는 추정부와, 상기 추정값으로 상기 프로세스 장치가 처리를 행함으로써 기판 상에 형성될 패턴의 치수 분포를 예측하는 예측부와, 예측한 치수 분포에 기초하여 설계 치수를 보정하는 보정부와, 상기 보정부에 의해 보정된 치수에 기초하여 기판 상에 하전 입자 빔을 조사해서 패턴을 묘화하는 묘화부를 구비하는 것이다.

Electron microscope with electron spectrometer

A lens adjustment method and a lens adjustment system which adjust a plurality of multi-pole lenses of an electron spectrometer attached to a transmission electron microscope, optimum conditions of the multi-pole lenses are determined through simulation based on a parameter design method using exciting currents of the multi-pole lenses as parameters.

Plasma flood gun for charged particle apparatus

A method for altering surface charge on an insulating surface of a first sample includes generating first plasma inside a plasma source, causing the first plasma to diffuse into a first vacuum chamber to generate second downstream plasma, immersing the first sample in the second downstream plasma, and applying a first bias voltage to a conductive layer of the first sample, or applying a first bias voltage to a metal holder that holds the first sample.

Charged particle beam alignment method and charged particle beam apparatus

An object of the present invention is to provide a charged particle beam apparatus and an alignment method of the charged particle beam apparatus, which make it possible to align an optical axis of a charged particle beam easily even when a state of the charged particle beam changes. The present invention comprises calculation means for calculating a deflection amount of an alignment deflector which performs an axis alignment for an objective lens, a plurality of calculation methods for calculating the deflection amount is memorized in the calculation means, and a selection means for selecting at least one of the calculation methods is provided.

CHARGED PARTICLE ASSESSMENT TOOL, INSPECTION METHOD

SCANNING ELECTRON MICROSCOPE AND SCANNING TUNNELING ELECTRON MICROSCOPE

This scanning tunneling electron microscope comprises an electron lens system with a small lens aberration coefficient to allow three-dimensional observation of 0.1nm atomic sized structures. This scanning tunneling electron microscope further comprises: an aperture whereby an illumination angle may be changed; an illumination electron lens assembly which is capable of changing electron beam probe size and illumination angle; a secondary electron detector (9); a tunneling electron detector (13); a forward scattered electron beam detector (12); a variable focus device (16); an image computation device which identifies image contrast; an image computation device which computes image sharpness; a computation device which carries out a three-dimensional configuration of the image; and a mixer (18) which mixes a secondary electron signal with a specimen forward scattering electron signal.

CHARGED PARTICLE BEAM MICROSCOPE, AND METHOD FOR CORRECTING MEASURED IMAGE USING SAME

The purpose of the present invention is to correct image distortion due to influence of a drift of a stage using a smaller number of images without waiting for stop of stage movement. In order to achieve the purpose, this invention measures an image for reference (202) for distortion correction, at a position and a magnification identical to those of an image (201) to be obtained for the purpose of observation. At that time, in order to reduce influence of drift, the image for reference is measured in a time shorter than that in which conventional images for observation are measured. The shape of the image for observation is corrected by comparing the shape of the image for reference and the shape of the image for observation with each other, and distortion is reduced.

CHARGED PARTICLE BEAM WRITING APPARATUS, CHARGED PARTICLE BEAM WRITING METHOD, AND PATTERN FORMING METHOD

In one embodiment, a charged particle beam writing apparatus includes an estimator calculating an estimated value of a process parameter of a processing device at a scheduled timing at which a substrate as an object of pattern correction is processed in the processing device from a history of the process parameter of the processing device which performs a process after pattern writing, a predictor predicting dimension distribution of a pattern formed on the substrate by the processing device performing the process with the estimated value, a corrector correcting a design dimension based on the predicted dimension distribution, and a writer irradiating the substrate with a charged particle beam and writing the pattern based on the dimension corrected by the corrector. 1. A charged particle beam writing apparatus comprising:an estimator calculating an estimated value of a process parameter of a processing device at a scheduled timing at which a substrate as an object of pattern correction is processed in the processing device from a history of the process parameter of the processing device which performs a process after pattern writing;a predictor predicting dimension distribution of a pattern formed on the substrate by the processing device performing the process with the estimated value;a corrector correcting a design dimension based on the predicted dimension distribution; anda writer irradiating the substrate with a charged particle beam and writing the pattern based on the dimension corrected by the corrector.2. The apparatus according to claim 1 , further comprising a determinator comparing an actual process parameter in the processing device processing the substrate where the pattern is written at the scheduled timing and the estimated value claim 1 , and determining whether a dimensional variation caused by the processing device is occurred in the pattern on the substrate processed in the processing device based on a result of the comparison.3. The apparatus ...

Elektronenoptischer Korrektor für aplanatische Abbildungssysteme

PARTICLE MULTIBEAM LITHOGRAPHY

In a particle multibeam lithography apparatus an illumination system (242) having a particle source (203) produces an illuminating beam (205) of electrically charged particles, and a multibeam optical system (208) positioned after the illumination system (242) and comprising at least one aperture plate having an array of a plurality of apertures to form a plurality of sub-beams focuses the sub-beams onto the surface of a substrate (220), wherein for each sub-beam (207) a deflection unit (210) is positioned within the multibeam optical system and adapted to correct individual imaging aberrations of the respective sub-beam with respect to the desired target position and/or position the sub-beam during a writing process an the substrate surface Preferably, for each sub-beam the respective aperture of the first aperture plate defines the size and shape of the sub-beam cross-section and the multibeam optical system produces a demagnified image of the aperture on the substrate surface, with a ...

DETECTOR SUBSTRATE, AN INSPECTION APPARATUS AND METHOD OF SAMPLE ASSESSMENT

There is provided a detector substrate for use in a charged particle multi-beam assessment tool to detect charged particles from a sample. The detector substrate defines an array of apertures for the beam paths of respective charged particle beams of a multi-beam. The detector substrate comprises: a sensor unit array. A sensor unit of the sensor unit array is adjacent a corresponding aperture of the aperture array. The sensor unit is configured to capture charged particles from the sample. The detector array comprises an amplification circuit associated with each sensor unit in the sensor unit array and proximate to the corresponding aperture in the aperture array. The amplification circuit comprising a Trans Impedance Amplifier and/or an analogue to digital converter.

Method for Axial Alignment of Charged Particle Beam and Charged Particle Beam System

A method for axial alignment of a charged particle beam relative to at least three stages of multipole elements and a charged particle beam system capable of making the axial alignment. Some parts of the orbit of the beam or the distributions of three astigmatic fields, or both, are simultaneously translated in a direction perpendicular to the optical axis such that astigmatisms of the same order and same type due to axial deviations between successive ones of the astigmatic fields cancel.

Particle beam device with deflection system

A particle beam device includes a particle beam generator, an objective lens, and first and second deflection systems for deflecting the particle beam in an object plane defined by the objective lens. In a first operating mode, the first deflection system generates a first deflection field and the second deflection system generates a second deflection field. In a second operating mode, the first deflection system generates a third deflection field and the second deflection system generates a fourth deflection field.

Lithography system and method of refracting

A charged particle lithography system for transferring a pattern onto the surface of a target, such as a wafer, comprising a charged particle source adapted for generating a diverging charged particle beam, a converging means for refracting said diverging charged particle beam, the converging means comprising a first electrode, and an aperture array element comprising a plurality of apertures, the aperture array element forming a second electrode, wherein the system is adapted for creating an electric field between the first electrode and the second electrode.

Multiple-pole electrostatic deflector for improving throughput of focused electron beam instruments

One embodiment relates to a focused electron beam imaging apparatus. The apparatus includes an electron beam column, an electron source, a gun lens, a pre-scanning deflector, a main scanning deflector, an objective lens, and a detector. The pre-scanning deflector comprises a 12-pole electrostatic deflector which is configured to controllably deflect the electron beam away from the optical axis of the electron beam column. Another embodiment relates to a method of scanning an electron beam over a target substrate in a focused electron beam imaging instrument. The electron beam is controllably deflected, without third-order deflection aberrations, away from an optical axis of an electron beam column using a pre-scanning deflector. The electron beam is then controllably deflected back towards the optical axis using a main scanning deflector so that the electron beam passes through a center of an objective electron lens. Other embodiments, aspects and features are also disclosed.

Scanning electron microscope and inspection method using same

Provided is a high-resolution scanning electron microscope with minimal aberration, and equipped with an electro-optical configuration that can form a tilted beam having wide-angle polarization and a desired angle, without interfering with an electromagnetic lens. In the scanning electron microscope, an electromagnetic deflector ( 201 ) is disposed above a magnetic lens ( 207 ), and a control electrode ( 202 ) that accelerates or decelerates electrons is provided so at to overlap (in such a manner that the height positions overlap with respect to the vertical direction) with the electromagnetic deflector ( 201 ). In wide field polarization, electrodes are accelerated, and in tilted beam formation, electrons are decelerated.

Method for setting an operating parameter of a particle beam device and a sample holder for performing the method

A method for adjusting an operating parameter of a particle beam device and a sample holder, which is suitable in particular for performing the method are provided. An adjustment of an operating parameter of a particle beam device is possible without transfer of the sample holder out of the particle beam device. A reference sample is placed in a first sample receptacle, so that in ongoing operation of the particle beam device, the sample holder need only be positioned in such a way that the reference sample is bombarded and measured with the aid of a particle beam generated in the particle beam device.

Charged particle microscope and measurement image correction method thereof

A charged particle microscope corrects distortion in an image caused by effects of drift in the sampling stage by measuring the correction reference image in a shorter time than the observation image, making corrections by comparing the shape of the observation image with the shape of the correction reference image, and reducing distortion in the observation images. The reference image for distortion correction is measured at the same position and magnification as when acquiring images for observation. In order to reduce effects from drift, the reference image is at this time measured within a shorter time than the essential observation image. The shape of the observation image is corrected by comparing the shapes of the reference image and observation image, and correcting the shape of the observation image to match the reference image.

Method and Apparatus for Scanning a Surface of an Object Using a Particle Beam

A method of scanning a surface of an object using a particle beam comprises: determining a surface portion of the surface of the object, wherein the surface portion is to be scanned; determining initial positions of a set of raster points within the surface portion; changing the positions of at least some raster points of the set of raster points; and then scanning the surface portion by directing the particle beam to the positions of the raster points.

Method of Axial Alignment of Charged Particle Beam and Charged Particle Beam System

A method of axially aligning a charged particle beam implemented by a charged particle beam system equipped with an astigmatic correction lens including a first pair of coils and a second pair of coils. The method starts with obtaining first to sixth sets of image data while varying currents flowing through the first to fourth coils according to first to sixth sets of conditions. Then, the values of the currents through the first to fourth coils for correcting the position of the axis of the beam are calculated based on the first to sixth sets of image data.

Charged Particle Optics with Azimuthally-Varying Third-Order Aberrations for Generation of Shaped Beams

A charged particle shaped beam column includes: an objective lens configured to form a charged particle shaped beam on the surface of a substrate, wherein the disk of least confusion of the objective lens does not coincide with the surface of the substrate; an optical element with 8N poles disposed radially symmetrically about the optic axis of the column, the optical element being positioned between a condenser lens and the objective lens, wherein integer N1; and a power supply applying excitations to the optical element's 8N poles to provide an octupole electromagnetic field. The octupole electromagnetic field induces azimuthally-varying third-order deflections to beam trajectories passing through the 8N-pole optical element. By controlling the excitation of the 8N poles a shaped beam, such as a square beam, can be formed at the surface of the substrate.

Method and System for Edge-of-Wafer Inspection and Review

An electron-optical system for inspecting or reviewing an edge portion of a sample includes an electron beam source configured to generate one or more electron beams, a sample stage configured to secure the sample and an electron-optical column including a set of electron-optical elements configured to direct at least a portion of the one or more electron beams onto an edge portion of the sample. The system also includes a sample position reference device disposed about the sample and a guard ring device disposed between the edge of the sample and the sample position reference device to compensate for one or more fringe fields. One or more characteristics of the guard ring device are adjustable. The system also includes a detector assembly configured to detect electrons emanating from the surface of the sample. 1. A system comprising:an electron beam source configured to generate one or more electron beams;a sample stage configured to secure a sample;an electron-optical column including a set of electron-optical elements configured to direct at least a portion of the one or more electron beams onto an edge portion of the sample;a detector assembly configured to detect electrons emanating from the sample; anda controller, wherein the controller is communicatively coupled to one or more portions of at least one of the electron beam source, the set of electron-optical elements of the electron optical column or the stage, wherein the controller is configured to:receive one or more parameters representative of one or more characteristics of the one or more electron beams at an edge portion of the sample;generate a look-up table for compensating for one or more fringe fields within the electron-optical system; andadjust one or more characteristics of the electron-optical system based on the generated look-up table.2. The system of claim 2 , wherein the controller is communicatively coupled to a stigmator of the electron optical column claim 2 , wherein the controller is ...

ABERRATION-CORRECTED MULTIBEAM SOURCE, CHARGED PARTICLE BEAM DEVICE AND METHOD OF IMAGING OR ILLUMINATING A SPECIMEN WITH AN ARRAY OF PRIMARY CHARGED PARTICLE BEAMLETS

A charged particle beam device for inspection of a specimen with an array of primary charged particle beamlets is described. The charged particle beam device includes a charged particle beam source to generate a primary charged particle beam; a multi-aperture plate having at least two openings to generate an array of charged particle beamlets having at least a first beamlet having a first resolution on the specimen and a second beamlet having a second resolution on the specimen; an aberration correction element to correct at least one of spherical aberrations and chromatic aberrations of rotational symmetric charged particle lenses; and an objective lens assembly for focusing each primary charged particle beamlet of the array of primary charged particle beamlets onto a separate location on the specimen. 1. A charged particle beam device for inspection of a specimen with an array of primary charged particle beamlets , comprising:a charged particle beam source to generate a primary charged particle beam;a multi-aperture plate having at least two openings to generate an array of primary charged particle beamlets having at least a first beamlet having a first resolution on the specimen and a second beamlet having a second resolution on the specimen;an aberration correction element, provided between the charged particle beam source and the multi-aperture plate, to correct at least one of spherical aberrations and chromatic aberrations of rotationally symmetric charged particle lenses, and to correct the difference between the first resolution on the specimen and the second resolution on the specimen, the aberration correction element comprising two electric or magnetic quadrupole elements and at least two multipole elements, the at least two multipole elements comprising two combined electric-magnetic quadrupole elements; andan objective lens assembly for focusing each primary charged particle beamlet of the array of primary charged particle beamlets onto a separate ...

APPARATUS AND METHOD FOR MEASURING ENERGY SPECTRUM OF BACKSCATTERED ELECTRONS

The present invention relates to an apparatus and method for analyzing the energy of backscattered electrons generated from a specimen. The apparatus includes: an electron beam source () for generating a primary electron beam; an electron optical system () configured to direct the primary electron beam to a specimen while focusing and deflecting the primary electron beam; and an energy analyzing system configured to detect an energy spectrum of backscattered electrons emitted from the specimen. The energy analyzing system includes: a Wien filter () configured to disperse the backscattered electrons; a detector () configured to measure the energy spectrum of the backscattered electrons dispersed by the Wien filter (); and an operation controller () configured to change an intensity of a quadrupole field of the Wien filter (), while moving a detecting position of the detector () for the backscattered electrons in synchronization with the change in the intensity of the quadrupole field. 1. An apparatus comprising:an electron beam source configured to generate a primary electron beam;an electron optical system configured to direct the primary electron beam to a specimen while focusing and deflecting the primary electron beam; andan energy analyzing system configured to detect an energy spectrum of backscattered electrons emitted from the specimen, a Wien filter configured to disperse the backscattered electrons;', 'a detector configured to measure the energy spectrum of the backscattered electrons dispersed by the Wien filter; and', 'an operation controller configured to change an intensity of a quadrupole field of the Wien filter, while moving a detecting position of the detector for the backscattered electrons in synchronization with the change in the intensity of the quadrupole field., 'the energy analyzing system including2. The apparatus according to claim 1 , wherein the operation controller is configured to change the intensity of the quadrupole field of the Wien ...

Electron microscope with improved imaging resolution

Disclosed herein are electron microscopes with improved imaging. An example electron microscope at least includes an illumination system, for directing a beam of electrons to irradiate a specimen, an elongate beam conduit, through which the beam of electrons is directed; a multipole lens assembly configured as an aberration corrector, and a detector for detecting radiation emanating from the specimen in response to said irradiation, wherein at least a portion of said elongate beam conduit extends at least through said aberration corrector and has a composite structure comprising an outer tube of electrically insulating material, and an inner skin of electrically conductive material with an electrical conductivity σ and a thickness t, with σt<0.1 Ω −1 .

METHOD FOR AUTOMATIC CORRECTION OF ASTIGMATISM

The method is for automatic astigmatism correction of a lens system. A first image is provided that is not in focus at a first stigmator setting of a set of lenses. A calculating device calculates a corresponding first Fourier spectrum image. A distribution and direction of pixels of the Fourier spectrum image are determined by calculating a first vector and a second vector. The first vector is compared with the second vector. The lens system is changed from a first stigmator setting to a second stigmator setting to provide a second image. A corresponding Fourier spectrum image is calculated. The distribution and direction of pixels of the second Fourier spectrum image is determined by calculating a third vector and a fourth vector. The third vector is compared to the fourth vector. The image that has the lowest vector ratio is selected. 1. A method for automatic astigmatism correction of a lens system , comprising ,providing a first image of a view not being in focus at a first stigmator setting of a lens,based on the first image at the first stigmator setting,a calculating device calculating a first Fourier spectrum image,determining a distribution and directions of intensities in the image by calculating a first vector and a second vector,comparing the first vector with the second vector, changing the lens from the first stigmator setting to a second stigmator setting to provide a second image of the view not being in focus, the second image at the second stigmator setting being of the same view as the first image of the view at the first stigmator setting,the calculating device, calculating a second Fourier spectrum image based on the second image at the second stigmator setting,determining the distribution and directions of intensities in the second Fourier spectra image by calculating a third vector and a fourth vector,comparing the third vector with the fourth vector,when the first vector is more similar to the second vector than the third vector is to the ...

Device and Method for Computing Angular Range for Measurement of Aberrations and Electron Microscope

A device which computes an angular range of illumination of an electron beam in which aberrations in an optical system can be measured efficiently by a tableau method. The device () includes an aberration coefficient information acquisition portion () for obtaining information about aberration coefficients of the optical system, a phase distribution computing portion () for finding a distribution of phases in the electron beam passed through the optical system on the basis of the information about the aberration coefficients, and an angular range computing portion () for finding the angular range of illumination on the basis of the distribution of phases found by the phase distribution computing portion (). 1. A device for computing an angular range of illumination of an electron beam when aberrations in an optical system are measured by a tableau method , said device comprising:an aberration coefficient information acquisition portion for obtaining information about aberration coefficients of the optical system;a phase distribution computing portion for finding a distribution of phases in the electron beam passed through the optical system on the basis of the information about the aberration coefficients; andan angular range computing portion for finding the angular range of illumination on the basis of the distribution of phases found by the phase distribution computing portion.3. The device for computing an angular range as set forth in claim 2 , wherein said angular range computing portion sets the upper limit of said angular range of illumination to be equal to or greater than an angle of illumination at which phases in the distribution of phases found by said phase distribution computing portion have absolute values of π/4 or π/2.4. The device for computing an angular range as set forth in claim 1 , wherein said optical system is an imaging system.5. The device for computing an angular range as set forth in claim 1 , wherein said optical system is an ...

Multistage-Connected Multipole, Multistage Multipole Unit, and Charged Particle Beam Device

Provided are a multistage-connected multipole and a charged particle beam device that can be produced with precision in machining without requiring precision in brazing between a pole and an insulation material. This multi-stage connected multipole comprises: a plurality of poles Q-Q that are arranged along the optical-axis direction of a charged particle beam, and that have cutouts Non surfaces facing each other; and braces P-P that are arranged between the plurality of poles Q-Q and are made of an insulator. The poles Q-Q and the braces P-P are joined by fitting the braces P-P into the cutouts N and applying brazing so as to be interposed by a bonding material. 1. A multistage-connected multipole comprising:a plurality of poles disposed along an optical axis direction of a charged particle beam and having a notch in opposed surfaces; anda pillar disposed between the poles and comprised of an insulator,wherein the poles and the pillars are joined with each other in the notches via a joining material.2. A multistage-connected multipole according to claim 1 , further comprising:a cap joined to the notch via the joining material,wherein the pillar is joined to the pole via the cap.3. The multistage-connected multipole according to claim 2 ,wherein the pillar and the cap include a protruded portion and a recessed portion that can be engaged with each other.4. The multistage-connected multipole according to claim 1 ,wherein a material of an insulator constituting the pillar is ceramic, andwherein the joining material is a brazing material.5. The multistage-connected multipole according to claim 1 ,wherein a plurality of end faces of the poles at least on one end side are in a shape in accordance with one plane.6. The multistage-connected multipole according to claim 5 ,wherein before the pillar is joined via the joining material, the poles are connected to one connecting portion and are formed as a single pole base material together with the connecting portion.7. The ...

Apparatus of Plural Charged-Particle Beams

A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens. 1. A multi-beam apparatus for observing a surface of a sample , comprising:an electron source;a condenser lens below said electron source;a source-conversion unit below said condenser lens;an objective lens below said source-conversion unit;a deflection scanning unit below said source-conversion unit;a sample stage below said objective lens;a beam separator below said source-conversion unit;a secondary projection imaging system; and wherein said electron source, said condenser lens and said objective lens are aligned with a primary optical axis of said apparatus, and said sample stage sustains said sample so that said surface faces to said objective lens,', 'wherein said source-conversion unit comprises a beamlet-forming means with a plurality of beam-limit openings and an image-forming means with a plurality of electron optics elements,', 'wherein said electron source generates a primary-electron beam along said primary optical axis, and said primary-electron beam is focused by said condenser lens to become a substantially parallel beam and then incident into said source-conversion unit,', 'wherein a plurality of beamlets of said primary-electron beam exits from said source-conversion unit, said ...

ABERRATION-CORRECTED MULTIBEAM SOURCE, CHARGED PARTICLE BEAM DEVICE AND METHOD OF IMAGING OR ILLUMINATING A SPECIMEN WITH AN ARRAY OF PRIMARY CHARGED PARTICLE BEAMLETS

A charged particle beam device for inspection of a specimen with an array of primary charged particle beamlets is described. The charged particle beam device includes a charged particle beam source to generate a primary charged particle beam; a multi-aperture plate having at least two openings to generate an array of charged particle beamlets having at least a first beamlet having a first resolution on the specimen and a second beamlet having a second resolution on the specimen; an aberration correction element to correct at least one of spherical aberrations and chromatic aberrations of rotational symmetric charged particle lenses; and an objective lens assembly for focusing each primary charged particle beamlet of the array of primary charged particle beamlets onto a separate location on the specimen. 121.-. (canceled)22. A charged particle beam device for inspection of a specimen with an array of primary charged particle beamlets , comprising:a charged particle beam source to generate a primary charged particle beam;a multi-aperture plate having at least two openings to generate an array of primary charged particle beamlets having at least a first beamlet having a first resolution on the specimen and a second beamlet having a second resolution on the specimen;an aberration correction element to correct at least one of spherical aberrations and chromatic aberrations of rotationally symmetric charged particle lenses, the aberration correction element being arranged such that the primary charged particle beamlets enter the aberration correction element at a first end and exit at an opposite end; andan objective lens assembly for focusing each primary charged particle beamlet of the array of primary charged particle beamlets onto a separate location on the specimen.23. The charged particle beam device according to claim 22 , wherein the aberration correction element is configured to correct the difference between the first resolution on the specimen and the second ...

Beam Irradiation Device

The present disclosure aims at proposing a multi-beam irradiation device capable of correcting off-axis aberrations. In order to achieve the above object, a beam irradiation device is proposed, which includes a beam source which emits a plurality of beams; an objective lens () which focuses a beam on a sample; a first lens () which is arranged such that a lens main surface is positioned at an object point of the objective lens and deflects a plurality of incident beams toward an intersection point of a lens main surface of the objective lens and an optical axis; a second lens () which is arranged closer to a beam source side than the first lens and focuses the plurality of beams on a lens main surface of the first lens; and a third lens () which is arranged closer to the beam source side than the second lens and deflects the plurality of beams toward an intersection point of a lens main surface of the second lens and the optical axis. 1. A beam irradiation device comprising:a chip configured to emit an electron;an aperture lens array formed of a plurality of electrodes having a plurality of openings configured to divide a beam emitted from the chip into a plurality of beams;one or more power supplies configured to apply a voltage to at least one of the plurality of electrodes; anda first lens arranged on a side closer to a sample than the aperture lens array or arranged between the chip and the aperture lens array, the first lens being configured to focus a beam emitted from the chip,wherein an intensity of the first lens and an intensity of the aperture lens array are adjusted so that the beam divided after passing through the aperture lens array focus on a same plane perpendicular to an optical axis.2. The beam irradiation device according to claim 1 ,wherein a radius of an opening of an electrode disposed nearest to a chip side among the plurality of electrodes is not more than half of a radius of the opening of other electrodes.3. The beam irradiation device ...

ELECTRON BEAM EQUIPMENT

To improve the efficiency of generation of chromatic aberrations of an energy filter for reducing energy distribution. Mounted are an energy filter for primary electrons, the energy filter having a beam slit and a pair of a magnetic deflector and an electrostatic deflector that are superimposed with each other. An electron lens is arranged between the beam slit and the pair of the magnetic deflector and the electrostatic deflector. 1. Electron beam equipment comprising:an electron gun configured to emit primary electrons;an energy filter configured to pass electrons with predetermined energy;a stage configured to hold a sample; andan objective lens configured to irradiate the sample held on the stage with the primary electrons that have passed through the energy filter, whereinthe energy filter includes a beam slit and a pair of a magnetic deflector and an electrostatic deflector that are superimposed with each other, and an electron lens is provided between the beam slit and the pair of the magnetic deflector and the electrostatic deflector.2. The electron beam equipment according to claim 1 , whereinthe energy filter includes two pairs each having a magnetic deflector and an electrostatic deflector that are superimposed with each other, the two pairs being arranged with the beam slit interposed therebetween, andan electron lens is provided between the beam slit and at least one pair of the magnetic deflector and the electrostatic deflector.3. The electron beam equipment according to claim 1 , whereinthe energy filter includes two pairs each having a magnetic deflector and an electrostatic deflector that are superimposed with each other, the two pairs being arranged with the beam slit interposed therebetween, andelectron lenses are respectively provided between the beam slit and the two pairs each having the magnetic deflector and the electrostatic deflector.4. The electron beam equipment according to claim 1 , wherein the electron lens is one of a magnetic lens or ...

SYSTEMS AND METHODS FOR COMPENSATING DISPERSION OF A BEAM SEPARATOR IN A SINGLE-BEAM OR MULTI-BEAM APPARATUS

Systems and methods are provided for compensating dispersion of a beam separator in a single-beam or multi-beam apparatus. Embodiments of the present disclosure provide a dispersion device comprising an electrostatic deflector and a magnetic deflector configured to induce a beam dispersion set to cancel the dispersion generated by the beam separator. The combination of the electrostatic deflector and the magnetic deflector can be used to keep the deflection angle due to the dispersion device unchanged when the induced beam dispersion is changed to compensate for a change in the dispersion generated by the beam separator. In some embodiments, the deflection angle due to the dispersion device can be controlled to be zero and there is no change in primary beam axis due to the dispersion device. 1. A charged particle beam apparatus comprising:a source configured to provide a primary charged particle beam;a source conversion unit configured to form a plurality of parallel images of the source using a plurality of beamlets of the primary charged particle beam;a first projection system with an objective lens and configured to project the plurality of parallel images onto a sample and therefore form a plurality of primary probe spots thereon with the plurality of beamlets;a beam separator configured to separate the plurality of beamlets and a plurality of secondary charged particle beams generated from the sample by the plurality of primary probe spots;a detection device with a plurality of detection elements;a secondary projection system configured to focus the plurality of secondary charged particle beams onto the detection device and form a plurality of secondary probe spots thereon, and the plurality of secondary probe spots are detected by the plurality of detection elements; and 'wherein the first dispersion device comprises a first electrostatic deflector and a first magnetic deflector respectively exerting a first force and a second force on each of the plurality of ...

MULTI CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD OF ADJUSTING THE SAME

In one embodiment, a multi charged particle beam writing apparatus includes an emitter that emits a charged particle beam, an aperture plate in which a plurality of openings are formed and that forms multiple beams by allowing the charged particle beam to pass through the plurality of openings, a blanking plate provided with a plurality of blankers that each perform blanking deflection on a corresponding beam included in the multiple beams, a stage on which a substrate irradiated with the multiple beams, a detector that detects a reflection charged particle from the substrate, feature amount calculation circuitry that calculates a feature amount of an aperture image based on a detection value of the detector, and aberration correction circuitry that corrects aberration of the charged particle beam based on the feature amount. 1. A multi charged particle beam writing apparatus comprising:an emitter that emits a charged particle beam;an aperture plate in which a plurality of openings are formed and that forms multiple beams by allowing the charged particle beam to pass through the plurality of openings;a blanking plate provided with a plurality of blankers that each perform blanking deflection on a corresponding beam included in the multiple beams;a limitation aperture plate that blocks each of beams deflected by the plurality of blankers so as to enter a beam-OFF state;a stage on which a substrate irradiated with the multiple beams;a detector that detects a reflection charged particle from the substrate;feature amount calculation circuitry that calculates a feature amount of an aperture image based on a detection value of the detector; andaberration correction circuitry that corrects aberration of the charged particle beam based on the feature amount.2. The apparatus according to claim 1 , whereinthe feature amount calculation circuitry generates an approximate graphic that approximates the aperture image, and calculates the feature amount using an area of the ...

Particle-optical corrector which is free from axial aberrations of sixth order and electron microscope with corrector

A corrector has a strength of a central hexapole field (Ψ) which is selected such that the threefold axial astigmatism (A) vanishes and the strengths of two equal outer hexapole fields (Ψ) are selected such that the overall corrector () does not have a sixfold axial astigmatism (As). The length (L) of the central multipole element () in relation to the lengths (L) of the multipole elements ( and ) is chosen such that the axial three-lobed aberration of sixth order (D) vanishes. A separation between the outer multipole elements ( and ) and round lenses (″) further spaced apart from a symmetry plane () of the corrector corresponds to the focal length (f′) of those round lenses (″) plus an additional separation (Δz) which is chosen such that the axial three-lobed aberration of fourth order (D) vanishes for the given lengths L and L′. 118.-. (canceled)19. A particle-optical corrector for correcting spherical aberrations of an electron microscope , thereby preventing a threefold axial astigmatism , an axial three-lobed aberration of fourth order and a sixfold axial astigmatism , wherein the corrector comprises:a first outer multipole element of length L′ for generating a first hexapole field;a second central multipole element of length L for generating a second hexapole field in a symmetry plane of the corrector;a third outer multipole element of length L′ for generating a third hexapole field, wherein said first outer multipole element and said third outer multipole element are identical and said first and said third hexapole fields have identical strengths, wherein a strength of said second hexapole field is selected with respect to strengths of said first and said third hexapole fields such that the threefold axial astigmatism vanishes, said strengths of said first and said third hexapole fields thereby being selected such that the corrector does not have the sixfold axial astigmatism;a first round lens doublet having a first doublet first round lens and a first ...

Method and System for Edge-of-Wafer Inspection and Review

An electron-optical system for inspecting or reviewing an edge portion of a sample includes an electron beam source configured to generate one or more electron beams, a sample stage configured to secure the sample and an electron-optical column including a set of electron-optical elements configured to direct at least a portion of the one or more electron beams onto an edge portion of the sample. The system also includes a sample position reference device disposed about the sample and a guard ring device disposed between the edge of the sample and the sample position reference device to compensate for one or more fringe fields. One or more characteristics of the guard ring device are adjustable. The system also includes a detector assembly configured to detect electrons emanating from the surface of the sample. 1. A electron-optical system comprising:an electron beam source configured to generate one or more electron beams;a sample stage configured to secure a sample;an electron-optical column including a set of electron-optical elements configured to direct at least a portion of the one or more electron beams onto an edge portion of the sample;a sample position reference device disposed about the sample;a guard ring device disposed between the edge of the sample and the sample position reference device to compensate for one or more fringe fields, wherein one or more characteristics of the guard ring device are adjustable; anda detector assembly configured to detect electrons emanating from the surface of the sample.2. The system of claim 1 , wherein the guard ring device comprises:a conductive ring structure.3. The system of claim 1 , wherein the guard ring device comprises:a ring structure coated with a conductive material.4. The system of claim 1 , wherein the one or more adjustable characteristics of the guard ring device comprises:a height of the guard ring device.5. The system of claim 4 , wherein the one or more adjustable characteristics of the guard ring ...

SYSTEM AND METHOD FOR BARE WAFER INSPECTION

A wafer inspection system includes a controller in communication with an electron-beam inspection tool. The controller includes circuitry to: acquire, via an optical imaging tool, coordinates of defects on a sample; set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects; determine a position of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scanning of the sample; adjust the coordinates of the defects based on the determined positions of the subset of the defects; and set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates.

System and Method for Learning-Guided Electron Microscopy

A system and method is provided for rapidly collecting high quality images of a specimen through controlling a re-focusable beam of an electron microscope. An intelligent acquisition system instructs the electron microscope to perform an initial low-resolution scan of a sample. A low-resolution image of the sample is received by the intelligent acquisition system as scanned image information from the electron microscope. The intelligent acquisition system then determines regions of interest within the low-resolution image and instructs the electron microscope to perform a high-resolution scan of the sample, only in areas of the sample corresponding to the determined regions of interest or portions of the determined regions of interest, so that other regions within the sample are not scanned at high-resolution, where the high-resolution scanning in the regions of interest is guided by a probability map using a deep neural network for segmentation.

SAMPLE HOLDER FOR SCANNING ELECTRON MICROSCOPE, SCANNING ELECTRON MICROSCOPE IMAGE OBSERVATION SYSTEM, AND SCANNING ELECTRON MICROSCOPE IMAGE OBSERVATION METHOD

A water solution in which an observation sample is, for example, dissolved is sandwiched on a first insulative thin film side provided under a conductive thin film. When an electron beam incident part is charged minus, electric dipoles of water molecules are arrayed along a potential gradient. Electric charges are also generated on the surface of a second insulative thin film. The electric charges are detected by a terminal section and changes to a measurement signal. In a state in which an electron beam is blocked, the minus potential disappears. Consequently, the electric charges on the surface of the first insulative thin film also disappear, and the measurement signal output from the terminal section changes to 0. 1. A sample holder for a scanning electron microscope comprising:a first insulative thin film, one principal plane of which is a holding surface for an observation sample; anda conductive thin film stacked on another principal plane of the first insulative thin film, whereinon the one principal plane side of the first insulative thin film, a terminal section that detects a signal based on potential of the one principal plane of the first insulative thin film caused by an electron beam made incident from the conductive thin film side is provided.2. The sample holder for the scanning electron microscope according to claim 1 , whereina second insulative thin film is provided between the one principal plane of the first insulative thin film and the terminal section,one principal plane of the second insulative thin film and the one principal plane of the first insulative thin film are disposed to have a gap of a predetermined interval, andthe terminal section detects potential of the other principal plane of the second insulative thin film as a signal.3. The sample holder for the scanning electron microscope according to claim 1 , wherein thickness of the first insulative thin film is 200 nm or less.4. The sample holder for the scanning electron microscope ...

Accurate wavelength calibration in cathodoluminescence sem

A scanning electron microscope having a spectrometer with a sensor having a plurality of pixels, wherein the spectrometer directs different wavelengths of collected light onto different pixels. An optical model is formed and an error function is minimized to find values for the model, such that wavelength detection may be corrected using the model. The model can correct for errors generated by effects such as the motion of the electron beam over the specimen, aberrations introduced by optical elements, and imperfections of the optical elements. A correction function may also be employed to account for effects not captured by the optical model.

CHARGED PARTICLE BEAM DEVICE AND ARITHMETIC DEVICE

It is possible to determine an optimal parasitic aberration adjustment amount even when the relationship of the parasitic aberration adjustment amount with respect to the field intensity of multiple poles changes nonlinearly. To this end, in the present invention, an aberration correction amount is computed by measuring an aberration coefficient of an optical unit of a charged particle beam device, and at the same time, the present value of a power supply control value applied to an aberration corrector is measured. Then, the parasitic aberration adjustment amount for suppressing the amount of a parasitic aberration generated in the aberration corrector is computed on the basis of the aberration correction amount and the present value of the power supply control value. 1. A charged particle beam device comprising:a charged particle source configured to emit a charged particle beam;a condenser lens configured to converge the charged particle beam;an aberration corrector having multiple stages of multiple poles and configured to correct an aberration of an optical unit;an aberration corrector controlling power supply configured to generate power to be applied to the multiple poles;an aberration coefficients estimation unit configured to measure an aberration coefficient of the optical unit;an aberration correction target estimation unit configured to compute an aberration correction amount on the basis of the aberration coefficient;an aberration corrector power output value measurement unit configured to measure a present value of a power supply control value applied to the multiple poles from the aberration corrector controlling power supply; andan arithmetic device configured to compute a power supply control value for aberration correction to be applied to the multiple poles on the basis of the measured value of the power supply control value and the aberration correction amount.2. The charged particle beam device according to claim 1 , wherein the arithmetic ...

Wien filter and charged particle beam imaging apparatus

A Wien filter and a charged particle beam imaging apparatus are provided. The Wien filter Wien filter, including a Wien filter body which includes: an electrostatic deflector, including at least one pair of electrodes, respective two electrodes in each pair of which are opposite to each other, each electrode including an electrode body constructed in an arc-shaped form, and respective electrode bodies of respective two electrodes in each pair of the at least one pair of electrodes being arranged concentrically with and opposite to each other in a diameter direction, and the at least one pair of electrodes being configured to generate respective electric fields by cooperation of the respective two electrodes in each pair of the at least one pair of electrodes, in the condition of respective bias voltages applied individually thereon; and a magnetic deflector, including at least one pair of magnetic poles, respective two magnetic poles in each pair of which are opposite to each other, each magnetic pole including a magnetic pole body constructed in an arc-shaped form, and respective magnetic pole bodies of respective two magnetic poles in each pair of the at least one pair of magnetic poles being arranged concentrically with and opposite to each other in the diameter direction, and the magnetic pole bodies of the at least one pair of magnetic poles in the magnetic deflector and the electrode bodies of the at least one pair of electrodes in the electrostatic deflector being arranged concentrically and spaced apart from each other in a circumferential direction, and the at least one pair of magnetic poles being configured to generate respective magnetic fields by cooperation of respective two magnetic poles in each pair of the at least one pair of magnetic poles; a resultant electric field formed collectively by all of the respective electric fields is perpendicular to a resultant magnetic field formed collectively by all of the respective magnetic fields; and each ...

ABERRATION MEASUREMENT METHOD AND ELECTRON MICROSCOPE

An aberration measurement method for an objective lens in an electron microscope including an objective lens which focuses an electron beam that illuminates a specimen, and a detector which detects an electron beam having passed through the specimen, includes: introducing a coma aberration to the objective lens; measuring an aberration of the objective lens before introducing the coma aberration to the objective lens; measuring an aberration of the objective lens after introducing the coma aberration to the objective lens; and obtaining a position of an optical axis of the objective lens on a detector plane of the detector based on measurement results of the aberration of the objective lens before and after introducing the coma aberration. 1. An aberration measurement method for an objective lens in an electron microscope comprising an objective lens which focuses an electron beam that illuminates a specimen , and a detector which detects an electron beam having passed through the specimen , the aberration measurement method comprising:introducing a coma aberration to the objective lens;measuring an aberration of the objective lens before introducing the coma aberration to the objective lens;measuring an aberration of the objective lens after introducing the coma aberration to the objective lens; andobtaining a position of an optical axis of the objective lens on a detector plane of the detector based on measurement results of the aberration of the objective lens before and after introducing the coma aberration.2. The aberration measurement method according to claim 1 ,wherein, in obtaining the position of the optical axis of the objective lens, the position of the optical axis of the objective lens on the detector plane is obtained based on a change in an apparent aberration before and after introducing the coma aberration.3. The aberration measurement method according to claim 2 ,wherein, in obtaining the position of the optical axis of the objective lens, a ...

APPARATUS OF PLURAL CHARGED-PARTICLE BEAMS

One modified source-conversion unit and one method to reduce the Coulomb Effect in a multi-beam apparatus are proposed. In the modified source-conversion unit, the aberration-compensation function is carried out after the image-forming function has changed each beamlet to be on-axis locally, and therefore avoids undesired aberrations due to the beamlet tilting/shifting. A Coulomb-effect-reduction means with plural Coulomb-effect-reduction openings is placed close to the single electron source of the apparatus and therefore the electrons not in use can be cut off as early as possible. 1. (canceled)2. A source-conversion unit of an electron source that emits an electron beam ,the source-conversion unit comprising:a micro-deflector array that facilitates creation of a plurality of images of the electron source, each of the images being associated with a corresponding beamlet of a plurality of beamlets that are derived from the electron beam; and a micro-compensator array that facilitates adding aberration to each of the beamlets.3. The source-conversion unit of claim 2 , further comprising:a beamlet limiting component that includes a plurality of beamlet limiting apertures, each of the apertures to limit a corresponding beamlet of the plurality of beamlets.4. The source-conversion unit of claim 2 ,wherein the micro-deflector array includes a plurality of micro-deflectors,wherein the micro-compensator array includes a plurality of micro-compensators, andwherein each of the micro-deflectors facilitates creation of a corresponding image of the plurality of images.5. The source-conversion unit of claim 4 ,wherein each of the micro-compensators facilitates adding an aberration to a corresponding beamlet of the plurality of beamlets.6. The source-conversion unit of claim 4 ,wherein the plurality of micro-compensators facilitates adding a plurality of aberrations to the plurality of beamlets, each of the micro-compensators facilitates adding a corresponding aberration of the ...

Method of Acquiring Dark-Field Image

A method of acquiring a dark-field image for a scanning transmission electron microscope is provided. The scanning transmission electron microscope includes a dark-field detector having an annular detection region which is capable of detecting electrons scattered at a specimen in a predetermined angular range, an objective lens, and an imaging lens group disposed at a stage following the objective lens. The method includes reducing an influence of a geometrical aberration on the electrons scattered in the predetermined angular range by shifting a focus of the imaging lens group from a diffraction plane of the objective lens. 1. A method of acquiring a dark-field image for a scanning transmission electron microscope ,the scanning transmission electron microscope comprising:a dark-field detector having an annular detection region configured to detect electrons scattered at a specimen in a predetermined angular range;an objective lens; andan imaging lens group disposed at a stage following the objective lens,the method comprising:reducing an influence of a geometrical aberration on the electrons scattered in the predetermined angular range by shifting a focus of the imaging lens group from a diffraction plane of the objective lens.2. The method of acquiring a dark-field image according to claim 1 , whereinthe scanning transmission electron microscope further comprises an imaging system deflector that deflects an electron beam transmitted through the specimen, andthe method further comprises correcting, with use of the imaging system deflector, a deviation of the electron beam from an optical axis generated by shifting the focus of the imaging lens group from the diffraction plane of the objective lens.3. The method of acquiring a dark-field image according to claim 1 , wherein the imaging lens group comprises an intermediate lens and a projector lens that are disposed at a stage following the objective lens.4. The method of acquiring a dark-field image according to ...

Method and System for Focus Adjustment of a Multi-Beam Scanning Electron Microscopy System

A scanning electron microscopy system is disclosed. The system includes a multi-beam scanning electron microscopy (SEM) sub-system. The SEM sub-system includes a multi-beam electron source configured to form a plurality of electron beams, a sample stage configured to secure a sample, an electron-optical assembly to direct the electron beams onto a portion of the sample, and a detector assembly configured to simultaneously acquire multiple images of the surface of the sample. The system includes a controller configured to receive the images from the detector assembly, identify a best focus image of images by analyzing one or more image quality parameters of the images, and direct the multi-lens array to adjust a focus of one or more electron beams based on a focus of an electron beam corresponding with the identified best focus image. 1. A multi-beam scanning electron microscopy apparatus comprising: a multi-beam electron source configured to form a plurality of electron beams;', 'a sample stage configured to secure a sample;', 'an electron-optical assembly including a set of electron-optical elements configured to direct at least a portion of the plurality of electron beams onto a portion of the sample; and', 'a detector assembly configured to simultaneously acquire a plurality of images of the surface of the sample, each image associated with an electron beam of the plurality of electron beams;, 'a multi-beam scanning electron microscopy sub-system comprising receive the plurality of images from the detector assembly;', 'identify at least one of a best focus image or a best astigmatism image of the plurality of images by analyzing one or more image quality parameters of at least some of the images of the plurality of the images; and', 'direct the multi-beam source to adjust at least one of focus or astigmatism of one or more electron beams based on at least one of focus or astigmatism of an electron beam corresponding with at least one of the identified best focus ...

CHARGED-PARTICLE-BEAM DEVICE

A charged-particle-beam device used for measuring the dimensions, etc., of fine circuit patterns in a semiconductor manufacturing process, wherein corrections are made in the defocusing and astigmatism generated during changes in the operating conditions of a Wien filter acting as a deflector of secondary signals such as secondary electrons, and the display dimensions of obtained images are kept constant. In the charged-particle-beam device, the Wien filter () is arranged between a detector and a lens () arranged on the test-sample side among two stages of lenses for converging a charged-particle beam, and a computing device () is provided for the interlocked control of the Wien filter () and a lens () arranged on the charged-particle-source side among the two stages of lenses. 1. A charged particle beam apparatus comprising:a charged particle source;2-stage lenses for converging a primary charged particle beam emitted from the charged particle source on a sample, wherein a first lens arranged on a side of the charged particle source and a second lens arranged on the side of the sample are included;a deflector that specifies an irradiation position of the primary charged particle beam on the sample;a detector arranged between the 2-stage lenses to detect a secondary charged particle signal generated by the sample being irradiated with the primary charged particle beam from the sample;a first Wien filter arranged between the detector and the second lens to deflect the secondary charged particle signal; anda processor that controls the first Wien filter and the first lens in linkage.2. The charged particle beam apparatus according to claim 1 , wherein the processor calculates an action of the first lens from a deflection amount of the secondary charged particle signal by the first Wien filter.3. The charged particle beam apparatus according to claim 2 , wherein the processor calculates the action of the first lens by accepting a focused position of the first lens ...

A CORRECTOR STRUCTURE AND A METHOD FOR CORRECTING ABERRATION OF AN ANNULAR FOCUSED CHARGED-PARTICLE BEAM

A corrector structure and a method for correcting aberration of an annular focused charged-particle beam, the corrector structure comprising a plurality of lenses configured for reducing second-order geometric aberration in the charged-particle beam. 1. A corrector structure for correcting aberration of an annular focused charged-particle beam , the corrector structure comprising a plurality of lenses configured for reducing second-order geometric aberration in the charged-particle beam.2. The corrector structure of claim 1 , wherein the lenses comprise core-lenses.3. The corrector structure of claim 1 , wherein the lenses comprise at least one converging lens and at least one diverging lens.4. The corrector structure of claim 1 , wherein for a charged-particle beam converging from a source in a direction towards an objective lens claim 1 , the corrector structure comprises two or more lenses.5. The corrector structure of claim 1 , wherein for a charged-particle beam diverging from a source in a direction towards an objective lens claim 1 , the corrector structure comprises three or more lenses.6. The corrector structure of wherein the lenses comprise two converging lenses and one diverging lens.7. The corrector structure of claim 6 , wherein the diverging lens is disposed between the two converging lenses along a path for the charged-particle beam.8. The corrector structure of claim 1 , wherein the corrector structure is configured for disposal between an objective lens and an annular aperture along a path for the charged-particle beam.9. The corrector structure of claim 1 , wherein the lenses comprise electric field claim 1 , magnetic field and/or combined electric/magnetic field lenses.10. A method for correcting aberration of an annular focused charged-particle beam claim 1 , the method comprising:providing a plurality of lenses; andconfiguring the lenses for reducing second-order geometric aberration in the charged-particle beam.11. The method of claim 10 , ...

Aligning a featureless thin film in a tem

When preparing a Hole-Free Phase Plates (HFPP) a preferably featureless thin film should be placed with high accuracy in the diffraction plane of the TEM, or a plane conjugate to it. Two methods for accurately placing the thin film in said plane are described. One method uses a Ronchigram of the thin film while the TEM is in imaging mode, and the magnification of the Ronchigram is tuned so that the magnification in the middle of the Ronchigram is infinite. The second method uses electrons scattered by the thin film while the TEM is in diffraction mode. When the thin film does not coincide with the diffraction plane, electrons scattered by the thin film seem to originate from another location than the cross-over of the zero beam. This is observed as a halo. The absence of the halo is proof that the thin film coincides with the diffraction plane.

Charged Particle Beam Device

There is proposed a charged particle beam device that generates a first signal waveform on the basis of scanning, the number of scanning lines of which is one or more, the scanning intersecting an edge of a pattern on a sample, generates a second signal waveform for a first area that is wider than the one scanning line on the basis of scanning, the number of scanning lines of which is larger than that of scanning for generating the first signal waveform, then determines a deviation between the generated first and second signal waveforms, and thereby determines, from the deviation, correction data used at the time of dimensional measurement. 1. A charged particle beam device comprising: a scanning deflector that scans a charged particle beam emitted from a charged particle source; a detector that detects a charged particle obtained on the basis of scanning of the charged particle beam applied to a sample; a computing device that generates a signal waveform on the basis of an output of the detector , and computes pattern dimensions of a pattern formed on the sample by using the signal waveform; and a control device that controls the scanning deflector ,wherein when the control device controls the scanning deflector to perform scanning, the number of scanning lines of which being one or more, for a first region intersecting an edge of the pattern on the sample, the computing device generates a first signal waveform on the basis of the charged particle detected by the detector,when the control device controls the scanning deflector to perform scanning, the number of scanning lines of which being larger than that at the time of scanning the first region, for a first area that includes the first region, and that is wider than the first region, the computing device generates a second signal waveform on the basis of the charged particle detected by the detector, andthe control device determines a deviation between the generated first and second signal waveforms.2. The ...

Beam Deflection Device, Aberration Corrector, Monochromator, and Charged Particle Beam Device

The present disclosure pertains to a beam deflection device capable of properly deflecting a beam. The present disclosure provides a beam deflection device for deflecting a beam inside a charged particle beam device, said beam deflection device being provided with: one or more electrostatic deflectors (207, 208) each having a pair of electrodes disposed so as to face each other across a beam path in a first direction orthogonal to the beam path; and one or more magnetic deflectors (209) each having a pair of magnetic poles disposed so as to face each other across the beam path in a second direction orthogonal to the beam path and to the first direction. When viewed from an incident direction of the beam, the one or more electrostatic deflectors and the one or more magnetic deflectors are stacked along the beam path such that the pair of electrodes at least partially overlap with the pair of magnetic poles and with a gap between the pair of magnetic poles.

Particle beam profiles for analytic equipment configuration

Beam intercept profiles are measured as a particle beam transversely scans across a probe. A current of beam particles, a detector intensity, or image pixel intensities can variously be measured to obtain the profiles. Multiple profiles are used to determine geometric parameters which in turn can be used to configure equipment. In one application, transverse beam intercept profiles are measured for different waist heights of the particle beam. Steepness of the several profiles can be used to determine a height of the probe as the height at which the profile is steepest. The known probe height enables placing the probe in contact with a substrate at another known height. In another application, transverse beam intercept profiles of orthogonal probe edges are used to position a beam waist, reduce spot size, or reduce astigmatism. Techniques are applicable to SEM, FIB, and nanoprobe systems. Methods and apparatus are disclosed, with variations.

Charged Particle Beam Device and Spherical Aberration Correction Method

In general, in a multipole lens of an aberration corrector of a charged particle beam device, there is only one condition that can be set where both a spherical aberration correction condition and magnetic saturation are satisfied. Therefore, a plurality of acceleration voltages cannot be handled. Consequently, the present invention provides a spherical aberration corrector that satisfies the magnetic saturation state for a plurality of aberration correction conditions by selectively magnetizing a plurality of pole groups of the multipole lens according to the changes in the objective lens magnetization current. 1. A charged particle beam device comprising:a charged particle beam source;a charged particle optical system that irradiates a specimen with charged particle beams which are formed of charged particles released from the charged particle source;an objective lens that focuses the charged particle beams;a spherical aberration corrector that satisfies a magnetically saturated state in multiple aberration correction conditions by selectively magnetizing multiple sets of pole groups of a multipole lens according to a change in magnetization current of the objective lens; anda control unit that controls the charged particle optical system and the spherical aberration corrector.2. The charged particle beam device according to claim 1 ,wherein the multiple aberration correction conditions respectively correspond to multiple acceleration voltages.3. The charged particle beam device according to claim 1 ,wherein the multiple aberration correction conditions respectively correspond to multiple pole piece shapes of the objective lens.4. The charged particle beam device according to claim 1 ,wherein the multipole lens is a 12-pole lens including 12 poles, andwherein a first aberration correction condition is satisfied by magnetizing a first pole group including six poles of the 12 poles, a second aberration correction condition is satisfied by magnetizing a second pole ...

Apparatus of Plural Charged-Particle Beams

One modified source-conversion unit and one method to reduce the Coulomb Effect in a multi-beam apparatus are proposed. In the modified source-conversion unit, the aberration-compensation function is carried out after the image-forming function has changed each beamlet to be on-axis locally, and therefore avoids undesired aberrations due to the beamlet tilting/shifting. A Coulomb-effect-reduction means with plural Coulomb-effect-reduction openings is placed close to the single electron source of the apparatus and therefore the electrons not in use can be cut off as early as possible. 1deflecting a charged-particle beam of the single charged-particle source into a plurality of parallel beamlets which forms a plurality of virtual images respectively, wherein each of the plurality of virtual images is one of the plurality of sub-sources;correcting aberrations of each of the plurality of virtual images; andcutting a current of each of the plurality of beamlets.. A method for converting a single charged particle source into a plurality of virtual sub-sources, comprising steps of: This application claims the benefit of priority of U.S. provisional application No. 62/160,031 entitled to Xuedong Liu et al. filed on May 12, 2015 and entitled “Apparatus of Plural Charged-Particle Beams”, the entire disclosures of which are incorporated herein by reference.This application is related to U.S. application Ser. No. 15/065,342 entitled to Weiming Ren et al. filed on Mar. 9, 2016 and entitled “Apparatus of Plural Charged-Particle Beams”, the entire disclosures of which are incorporated herein by reference.This application is related to U.S. application Ser. No. 15/078,369 entitled to Weiming Ren et al. filed on Mar. 23, 2016 and entitled “Apparatus of Plural Charged-Particle Beams”, the entire disclosures of which are incorporated herein by reference.1. Field of the InventionThe present invention relates to a charged-particle apparatus with a plurality of charged-particle beams. ...

Multipole Unit and Charged Particle Beam Device

An object is to provide a multipole unit capable of achieving both high positional accuracy and ease of assembling and preventing a decrease in the transmission rate of the magnetic flux. A multipole unit includes a pole that is made of a soft magnetic metal material, a shaft that is made of a soft magnetic metal material and is magnetically connected to the pole, and a coil that is wound around the shaft . The pole is provided with a first fitting portion JP that forms a first recessed portion or a first protruding portion. The shaft is provided with a second fitting portion JP that forms a second protruding portion or a second recessed portion. The first fitting portion JP and the second fitting portion JP are fitted with each other such that the pole and the shaft are physically separated from each other. 1. A multipole unit , comprising:a pole made of a soft magnetic metal material;a shaft made of a soft magnetic metal material and magnetically connected to the pole; anda coil wound around the shaft, whereinthe pole is provided with a first fitting portion that forms a first recessed portion or a first protruding portion,the shaft is provided with a second fitting portion that forms a second protruding portion or a second recessed portion,the second fitting portion forms the second protruding portion when the first fitting portion is the first recessed portion, and forms the second recessed portion when the first fitting portion is the first protruding portion, andthe first fitting portion and the second fitting portion are fitted with each other such that the pole and the shaft are physically separated from each other.2. The multipole unit according to claim 1 , whereinthe shaft is provided with a voltage supply terminal configured to supply a predetermined voltage to the shaft, andan elastic member having conductivity is provided in a gap between the first fitting portion and the second fitting portion so that the pole and the shaft are electrically connected. ...

INSPECTION TOOL AND METHOD OF DETERMINING A DISTORTION OF AN INSPECTION TOOL

A method of determining a distortion of a field of view of a scanning electron microscope is described. The method may include: providing a sample including substantially parallel lines extending in a first direction; performing scans across the field of view of the sample along respective scan-trajectories extending in a scan direction; the scan direction being substantially perpendicular to the first direction; detecting a response signal of the sample caused by the scanning of the sample; determining a distance between a first line segment of a line and a second line segment of the line, whereby each of the first line segment and the second line segment are crossed by scan trajectories, based on the response signal; performing the previous step for multiple locations within the field of view; and determining the distortion across the field of view, based on the determined distances at the multiple locations. 112-. (canceled)13. A non-transitory computer readable medium that stores a set of instructions that is executable by at least one processor of a scanning inspection tool to cause the scanning inspection tool to perform a method of determining a distortion of a field of view of the scanning inspection tool , the method comprising:performing a plurality of scans across the field of view of a sample along a respective plurality of scan-trajectories extending in a scan direction, the sample comprising a plurality of substantially parallel lines extending in a first direction, the scan direction being non-parallel to the first direction;detecting a response signal of the sample caused by the scanning of the sample;determining, for a plurality of locations within the field of view, a distance between a first line segment of a line and a second line segment of the line, whereby each of the first line segment and the second line segment are crossed by a plurality of scan trajectories, based on the response signal; anddetermining the distortion across the field of ...

Sixth-order and above corrected stem multipole correctors

Correctors for correcting axial aberrations of a particle-optical lens in a charged particle microscope system, according to the present disclosure include a first primary multipole that generates a first primary multipole field when a first excitation is applied to the first primary multipole, and a second primary multipole that generates a second primary multipole field when a second excitation is applied to the second primary multipole. The first primary multipole is not imaged onto the second primary multipole such that a combination fourth-order aberration is created. The correctors further include a secondary multipole for correcting the fourth-order aberration and the sixth-order aberration. Such correctors may further include a tertiary multipole for correcting an eighth-order aberration.

CONDUCTION INSPECTION METHOD FOR MULTIPOLE ABERRATION CORRECTOR, AND CONDUCTION INSPECTION APPARATUS FOR MULTIPOLE ABERRATION CORRECTOR

A conduction inspection method for a multipole aberration corrector according to one aspect of the present invention includes applying, in a state where a predetermined potential has been applied to each shield electrode, an inspection charged particle beam to pass through a first opening, a second opening, and a third opening, using a multipole aberration corrector which includes an upper-stage substrate where the first opening is formed and a shield electrode is arranged around the first opening, a middle-stage substrate where the second opening is formed, a plurality of control electrodes are disposed to be opposite each other across the second opening, and a plurality of wirings are arranged to be individually connected to one of the plurality of control electrodes which are different from each other, and a lower-stage substrate where the third opening is formed and a shield electrode is arranged around the third opening, and which corrects aberration of a correction charged particle beam passing through the first opening, the second opening, and the third opening by individually variably applying a potential to each of the plurality of control electrodes; measuring, via a wiring individually connected to each control electrode of the plurality of control electrodes in the plurality of wirings, an inflow electron dose of electrons, into each control electrode of the plurality of control electrodes, which are secondarily emitted because the inspection charged particle beam has passed through the first opening, the second opening, and the third opening and has irradiated an object disposed at the downstream side of the lower-stage substrate; and determining individually, for each control electrode, whether there is conduction between a control electrode concerned and a wiring connected to the control electrode concerned, based on a result of measuring the inflow electron dose into each control electrode. 1. A conduction inspection method for a multipole aberration ...

ABERRATION CORRECTION IN CHARGED PARTICLE SYSTEM

A lens element of a charged particle system comprises an electrode having a central opening. The lens element is configured for functionally cooperating with an aperture array that is located directly adjacent said electrode, wherein the aperture array is configured for blocking part of a charged particle beam passing through the central opening of said electrode. The electrode is configured to operate at a first electric potential and the aperture array is configured to operate at a second electric potential different from the first electric potential. The electrode and the aperture array together form an aberration correcting lens. 127-. (canceled)28. A lens element of a charged particle system , comprising:a body having a cavity formed therein for a path of a charged particle beam; anda cooling arrangement for cooling the lens elements, comprising one or more channels configured to accommodate a fluid flowing around the path of the charged particle beam,wherein the one or more channels are formed within a solid structure of the body.29. The lens element of claim 28 , wherein the cooling arrangement comprises one or more lateral channels extending in a substantially rotational direction around the path of the charged particle beam in circumference of the cavity.30. The lens element of claim 29 , wherein the cooling arrangement further comprises a longitudinal channel connected to at least two of the one or more lateral channels.31. The lens element of claim 30 , wherein the longitudinal channel has at least one section that extends in a radial direction to the path of the charged particle beam.32. The lens element of claim 30 , wherein the longitudinal channel has a section arranged for fluid flow in a substantially opposite direction of fluid flow via the lateral channels.33. The lens element of claim 30 , wherein the longitudinal channel has at least one section that extends substantially parallel to the path of the charged particle beam.34. The lens element of ...

Scanning Electron Microscope

This scanning electron microscope is provided with: a deceleration means that decelerates an electron beam () when the electron beam is passing through an objective lens; and a first detector () and a second detector () that are disposed between the electron beam and the objective lens and have a sensitive surface having an axially symmetric shape with respect to the optical axis of the electron beam. The first detector is provided at the sample side with respect to the second detector, and exclusively detects the signal electrons having a high energy that have passed through a retarding field energy filter (A). When the distance between the tip () at the sample side of the objective lens and the sensitive surface of the first detector is L and the distance between the tip at the sample side of the objective lens and the sensitive surface of the second detector is L, then L/L≦5/9. As a result, when performing low-acceleration observation using a deceleration method by means of a scanning electron microscope, it is possible to detect signal electrons without the effect of shading in a magnification range of a low magnification on the order of hundreds of times to a high magnification of at least 100,000×. Also, it is possible to highly efficiently detect backscattered electrons, of which the amount generated is less than that of secondary electrons. 1. A scanning electron microscope comprising:an electron source configured to generate an electronic beam acting as a probe;an aperture configured to limit a diameter of the electronic beam;a sample stand mounted with a sample to which the electronic beam is irradiated;an electron lens including an objective lens configured to converge the electronic beam to a surface of the sample;a deceleration means configured to decelerate the electronic beam having passed the objective lens as the electronic beam nears the sample;a deflector configured to scan the electronic beam on a sample; andat least two detectors configured to ...

Multi-charged particle beam writing apparatus, and multi-charged particle beam writing method

A multi-charged particle beam writing apparatus according to one aspect of the present invention includes a region setting unit configured to set, as an irradiation region for a beam array to be used, the region of the central portion of an irradiation region for all of multiple beams of charged particle beams implemented to be emittable by a multiple beam irradiation mechanism, and a writing mechanism, including the multiple beam irradiation mechanism, configured to write a pattern on a target object with the beam array in the region of the central portion having been set in the multiple beams implemented.

MULTI CHARGED PARTICLE BEAM WRITING APPARATUS AND MULTI CHARGED PARTICLE BEAM WRITING METHOD

According to one embodiment, a multi charged particle beam writing apparatus includes an objective lens adjusting a focus position of multiple beams, a coil correcting astigmatism of the multiple beams, an inspection aperture disposed in a stage and configured to allow one beam of the multiple beams to pass therethrough, a deflector deflecting the multiple beams, a current detector detecting a beam current of each beam of the multiple beams scanned over the inspection aperture in the XY direction and passed through the inspection aperture, and a controller generating a beam image on the basis of the detected beam current, calculating a feature quantity of the beam image, and controlling the objective lens or the coil on the basis of the feature quantity. 1. A multi charged particle beam writing apparatus comprising:an aperture plate having a plurality of holes and forming multiple beams by allowing a charged particle beam to pass through the plurality of holes;a blanking aperture array having a plurality of blankers each configured to turn on and off a corresponding beam of the multiple beams;a stage placing a substrate serving as a writing target thereon, the stage being movable in an XY direction;an objective lens adjusting a focus position of the multiple beams;a coil correcting astigmatism of the multiple beams;an inspection aperture disposed in the stage and configured to allow one beam of the multiple beams to pass therethrough;a deflector deflecting the multiple beams;a current detector detecting a beam current of each beam of the multiple beams scanned over the inspection aperture in the XY direction and passed through the inspection aperture; anda controller generating a beam image on the basis of the detected beam current, calculating a feature quantity of the beam image, and controlling the objective lens or the coil on the basis of the feature quantity.2. The apparatus according to claim 1 , wherein the inspection aperture is scanned at a plurality of ...

CHARGED-PARTICLE MICROSCOPY WITH ENHANCED ELECTRON DETECTION

A method of investigating a flux of output electrons emanating from a sample in a charged-particle microscope, which flux is produced in response to irradiation of the sample by a beam of input charged particles, the method comprising the following steps:

Method for adjusting a particle beam microscope

A method of adjusting a particle beam microscope includes measures A, B, C and D.

Apparatus of Plural Charged-Particle Beams

A secondary projection imaging system in a multi-beam apparatus is proposed, which makes the secondary electron detection with high collection efficiency and low cross-talk. The system employs one zoom lens, one projection lens and one anti-scanning deflection unit. The zoom lens and the projection lens respectively perform the zoom function and the anti-rotating function to remain the total imaging magnification and the total image rotation with respect to the landing energies and/or the currents of the plural primary beamlets. The anti-scanning deflection unit performs the anti-scanning function to eliminate the dynamic image displacement due to the deflection scanning of the plural primary beamlets. 1. A multi-beam apparatus for observing a surface of a sample , comprising:an electron source;a condenser lens below said electron source;a source-conversion unit below said condenser lens;an objective lens below said source-conversion unit;a deflection scanning unit below said source-conversion unit;a sample stage below said objective lens;a beam separator below said source-conversion unit; and wherein said electron source, said condenser lens, said source-conversion unit, said objective lens, said deflection scanning unit and said beam separator are aligned with a primary optical axis of said apparatus, said sample stage sustains said sample so that said surface faces to said objective lens, said detection unit is aligned with a secondary optical axis of said apparatus, and said secondary optical axis is not parallel to said primary optical axis,', 'wherein said plurality of detection elements is placed on a detection plane, said secondary projection imaging system comprises a zoom lens, an anti-scanning deflection unit and a projection lens,', 'wherein said electron source generates a primary electron beam along said primary optical axis, said condenser lens focuses said primary electron beam to a certain degree, said source-conversion unit changes said primary ...

Focused Ion Beam Low kV Enhancement

The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size.

MULTI CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD OF ADJUSTING SAME

In one embodiment, a multi charged particle beam writing apparatus includes an objective lens adjusting focus positions of multiple beams, an astigmatism correction element correcting astigmatism of the multiple beams, an inspection aperture allowing one of the multiple beams to pass therethrough, a deflector deflecting the multiple beams and causing the multiple beams to scan over the inspection aperture, a current detector detecting beam currents of the individual multiple beams after passing through the inspection aperture, a beam image formation unit forming a beam image based on the detected beam currents, a feature amount calculation unit generating a first waveform and a second waveform by adding brightnesses of the beam image in a first direction and in a second direction, and calculating a first and a second feature amounts from the first and the second waveforms, and a parameter calculation unit calculating an exciting parameter that is to be set for the astigmatism correction element based on the first feature amount and the second feature amount. 1. A multi charged particle beam writing apparatus comprising:an objective lens adjusting focus positions of multiple beams;an astigmatism correction element correcting astigmatism of the multiple beams;a stage on which a substrate serving as a writing target is placed;an inspection aperture disposed on the stage and allowing one of the multiple beams to pass therethrough;a current detector detecting beam currents of the individual multiple beams after passing through the inspection aperture;a deflector deflecting the multiple beams and causing the multiple beams to scan over the inspection aperture;a beam image formation unit forming a beam image based on the detected beam currents;a feature amount calculation unit generating a first waveform by adding brightnesses of the beam image in a first direction, calculating a first feature amount from the first waveform, generating a second waveform by adding the ...

Method for inspecting a specimen and charged particle multi-beam device

A method of inspecting a specimen with an array of primary charged particle beamlets in a charged particle beam device is described. The method includes generating a primary charged particle beam with a charged particle beam emitter; illuminating a multi-aperture lens plate with the primary charged particle beam to generate the array of primary charged particle beamlets; correcting a field curvature with at least two electrodes, wherein the at least two electrodes include aperture openings; directing the primary charged particle beamlets with a lens towards an objective lens; guiding the primary charged particle beamlets through a deflector array arranged within the lens; wherein the combined action of the lens and the deflector array directs the primary charged particle beamlets through a coma free point of the objective lens; and focusing the primary charged particle beamlets on separate locations on the specimen with the objective lens.

CHARGED PARTICLE BEAM APPARATUS AND ABERRATION CORRECTOR

High expectations are placed on aberration correctors to increase the resolving power of charged particle devices. Meanwhile, a far more complicated configuration and higher mechanical precision assembly in comparison to prior art aberration correctors are necessary in charged particle beam optical devices that use low-energy electron beams. A complex electromagnetic quadrupole part employed in the aberration corrector preferably has the forward extremities of the poles provided in a vacuum near an electron beam path and excitation coils disposed outside the vacuum, and this necessitates a structure that can achieve both electrical insulation and vacuum sealing for each of these poles. Such structural complexity generally conflicts with improving mechanical assembly precision. The complicated structure in the above problems can be simplified by: separating the electrodes and the magnetic poles in the complex electromagnetic multipole that had been used in prior art aberration correctors; and offsetting the positions of both, or ensuring that the widths of both do not match. Consequently, improvement of mechanical assembly precision can be achieved. 1. A charged particle beam apparatus , which is configured to irradiate a sample with a charged particle beam to detect a charged particle ascribable to the sample , the charged particle beam apparatus comprising an aberration correction unit , a first magnetic multipole and a second magnetic multipole;', 'a third magnetic multipole and a fourth magnetic multipole that are provided between the first magnetic multipole and the second magnetic multipole; and', 'a first electrostatic multipole and a second electrostatic multipole that are provided between the first magnetic multipole and the second magnetic multipole, wherein:, 'the aberration correction unit comprisingthe first magnetic multipole, the second magnetic multipole, the third magnetic multipole, and the fourth magnetic multipole and the first electrostatic ...

Apparatus of plural charged-particle beams

A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.

ABERRATION CORRECTOR AND ELECTRON MICROSCOPE

In order to provide an aberration corrector with a wide aberration correction range, easy control, highly accurate aberration correction, and a low cost, an aberration corrector, passing an electron beam through a central axis includes a first current line group ( to ) which is arranged parallel to an optical axis at a position separated by R from the central axis, and excites a first multipole field, and a second current line group ( to ) which is arranged parallel to the optical axis at a position separated by R from the central axis, and independently excites a second multipole field having an order and intensity different from those of the first multipole field. 1. An electron microscope comprising:an electron source;an aberration corrector which corrects an aberration of an electron beam emitted from the electron source; andan electron optical system which irradiates a sample with the electron beam, wherein an opening through which the electron beam passes through a central axis,', 'a first current line group which is arranged parallel to an optical axis at a position separated by a first radius from the central axis, and excites a first multipole field, and', 'a second current line group which is arranged parallel to the optical axis at a position separated by a second radius longer than the first radius, and independently excites a second multipole field having an order and intensity different from those of the first multipole field., 'the aberration corrector includes'}2. The electron microscope according to claim 1 , whereinthe number of lines of the first current line group is 12 or more.3. The electron microscope according to claim 1 , whereinthe first multipole field has an order higher than that of the second multipole field.4. The electron microscope according to claim 1 , whereina line width per pole of a current line constituting the second current line group is larger than a line width per pole of a current line constituting the first current line ...

APPARATUS OF PLURAL CHARGED-PARTICLE BEAMS

A secondary projection imaging system in a multi-beam apparatus is proposed, which makes the secondary electron detection with high collection efficiency and low cross-talk. The system employs one zoom lens, one projection lens and one anti-scanning deflection unit. The zoom lens and the projection lens respectively perform the zoom function and the anti-rotating function to remain the total imaging magnification and the total image rotation with respect to the landing energies and/or the currents of the plural primary beamlets. The anti-scanning deflection unit performs the anti-scanning function to eliminate the dynamic image displacement due to the deflection scanning of the plural primary beamlets. 176-. (canceled)77. A multi-beam imaging system comprising:a magnetic lens configured to adjust rotation of a plurality of secondary beams of charged particles of the multi-beam imaging system to enable detection of the plurality of secondary beams of charged particles by a corresponding plurality of detection elements.78. The system of claim 77 , wherein the magnetic lens is configured to generate a second rotation that reduces a first rotation generated by another component of the multi-beam imaging system.79. The system of claim 78 , wherein the other component includes an objective lens configured to focus a plurality of charged particle beamlets onto a sample surface.80. The system of claim 79 , wherein the magnetic lens is configured to minimize rotation variation of the plurality of secondary beams of charged particles when observing a sample in different conditions.81. The system of claim 80 , wherein the magnetic lens is configured to adjust rotation based on a focusing power of the objective lens.82. The system of claim 78 , wherein the other component includes a beam separator configured to separate a plurality of charged particle beamlets directed onto a sample surface from the plurality of secondary beams of charged particles.83. The system of claim 79 , ...

Multiple charged-particle beam apparatus with low crosstalk

Systems and methods of forming images of a sample using a multi-beam apparatus are disclosed. The method may include generating a plurality of secondary electron beams from a plurality of probe spots on the sample upon interaction with a plurality of primary electron beams. The method may further include adjusting an orientation of the plurality of primary electron beams interacting with the sample, directing the plurality of secondary electron beams away from the plurality of primary electron beams, compensating astigmatism aberrations of the plurality of directed secondary electron beams, focusing the plurality of directed secondary electron beams onto a focus plane, detecting the plurality of focused secondary electron beams by a charged-particle detector, and positioning a detection plane of the charged-particle detector at or close to the focus plane.

APPARATUS AND METHODS FOR ABERRATION CORRECTION IN ELECTRON BEAM BASED SYSTEM

One embodiment relates to an apparatus for aberration correction in an electron beam lithography system. An inner electrode surrounds a pattern generating device, and there is at least one outer electrode around the inner electrode. Each of the inner and outer electrodes has a planar surface in a plane of the pattern generating device. Circuitry is configured to apply an inner voltage level to the inner electrode and at least one outer voltage level to the at least one outer electrode. The voltage levels may be set to correct a curvature of field in the electron beam lithography system. Another embodiment relates to an apparatus for aberration correction used in an electron based system, such as an electron beam inspection, or review, or metrology system. Other embodiments, aspects and features are also disclosed. 1. An apparatus for aberration correction in electron-optics of an electron beam system , the apparatus comprising:an inner electrode surrounding an opening or reflector in the electron-optics, the inner electrode having a continuous annular planar surface with circular inner and outer perimeters in a plane of the opening or reflector;at least one outer electrode around the inner electrode, the at least one outer electrode having a planar surface in the plane of the opening or reflector; andcircuitry configured to apply an inner voltage level to the inner electrode and at least one outer voltage level to the at least one outer electrode,wherein the inner voltage level and the at least one outer voltage levels, as applied to said electrodes, each causes an electric field that influences both electrons incident to the opening or reflector and electrons outgoing from the opening or reflector.2. The apparatus of claim 1 , wherein each of the inner voltage level and the at least one outer voltage level are controlled individually.3. The apparatus of claim 2 , wherein the inner voltage level and the at least one outer voltage level are set to correct a curvature ...

Liner Tube and Electron Microscope

There is provided a liner tube capable of reducing the effects of magnetic field variations on an electron beam. The liner tube () is disposed inside the electron optical column () of an electron microscope (). The interior of the tube () forms a path for the electron beam (EB). The liner tube () has a first cylindrical member () that is made of copper, gold, silver, or an alloy consisting principally of one of these metals. 1. A liner tube disposed inside an electron optical column of an electron microscope and having an interior providing an elongate path for an electron beam , said liner tube separating an inner vacuum region and an outer non-vacuum region where electron optical elements that generate magnetic fields to affect the electron beam are disposed , said liner tube comprising:a first cylindrical member made of copper, gold, silver, or an alloy consisting principally of one of these metals.2. The liner tube as set forth in claim 1 , wherein a second cylindrical member is disposed inside said first cylindrical member and made of stainless steel or titanium.3. The liner tube as set forth in claim 1 , wherein said first cylindrical member is made of copper or beryllium copper.4. An electron microscope having an electron optical column in which a liner tube is disposed claim 1 , the liner tube having an interior providing an elongate path for an electron beam claim 1 , said liner tube separating an inner vacuum region and an outer non-vacuum region where electron optical elements that generate magnetic fields to affect the electron beam are disposed claim 1 ,wherein said liner tube has a first cylindrical member made of copper, gold, silver, or an alloy consisting principally of one of these metals.5. The electron microscope as set forth in claim 4 , further comprising an aberration corrector equipped with a multipole element claim 4 ,wherein said multipole element has a plurality of polar elements arranged around said first cylindrical member.6. The ...

BEAM TRAJECTORY VIA COMBINATION OF IMAGE SHIFT AND HARDWARE ALPHA TILT

Methods include holding a sample with a movement stage configured to rotate the sample about a rotation axis, directing an imaging beam to a first sample location with the sample at a first rotational position about the rotation axis and detecting a first transmitted imaging beam image, rotating the sample using the movement stage about the rotation axis to a second rotational position, and directing the imaging beam to a second sample location by deflecting the imaging beam in relation to an optical axis of the imaging beam and detecting a second transmitted imaging beam image, wherein the second sample location is spaced apart from the first sample location at least at least in relation to the optical axis. Related systems and apparatus are also disclosed. 1. A method , comprising:holding a sample with a movement stage configured to rotate the sample about a rotation axis;directing an imaging beam to a first sample location with the sample at a first rotational position about the rotation axis and detecting a first transmitted imaging beam;rotating the sample using the movement stage about the rotation axis to a second rotational position; anddirecting the imaging beam to a second sample location by deflecting the imaging beam in relation to an optical axis of the imaging beam and detecting a second transmitted imaging beam, wherein the second sample location is spaced apart from the first sample location at least in relation to the optical axis.2. The method of claim 1 , wherein the second sample location being spaced apart from the first sample location at least in relation to the optical axis comprises a spacing at least in the direction of the rotation axis.3. The method of claim 1 , further comprising:directing the imaging beam to one or more additional sample locations at one or more additional rotational positions and detecting corresponding transmitted imaging beam images;wherein the first sample location at the first rotational position, the second sample ...

MULTIPLE ELECTRON BEAM INSPECTION APPARATUS AND MULTIPLE ELECTRON BEAM INSPECTION METHOD

According to one aspect of the present invention, a multiple electron beam inspection apparatus includes a reference image generation circuit generating reference images corresponding to the secondary electron images, in accordance with an image generation characteristic of a secondary electron image by irradiation of one beam; and a correction circuit generating corrected reference images in which, on the basis of deviation information between a figure pattern of the secondary electron image by irradiation of the one beam of the multiple primary electron beams and a figure pattern of a secondary electron image by irradiation of another beam different from the one beam of the multiple primary electron beams, a shape of a figure pattern of a reference image corresponding to the figure pattern of the secondary electron image by the irradiation of the another beam in the reference images is corrected. 1. A multiple electron beam inspection apparatus comprising:a secondary electron image acquisition mechanism acquiring secondary electron images of figure patterns by irradiating a substrate formed with the figure patterns with multiple primary electron beams and detecting multiple secondary electron beams emitted from the substrate in accordance with the irradiation of the multiple primary electron beams;a reference image generation circuit generating reference images corresponding to the secondary electron images, in accordance with an image generation characteristic of a secondary electron image by irradiating one beam of the multiple primary electron beams, based on design data of the figure patterns;a correction circuit generating corrected reference images in which, on the basis of deviation information between a figure pattern of the secondary electron image by irradiating the one beam of the multiple primary electron beams and a figure pattern of a secondary electron image by irradiating another beam different from the one beam of the multiple primary electron ...

Method and System for Focus Adjustment of a Multi-Beam Scanning Electron Microscopy System

A scanning electron microscopy system is disclosed. The system includes a multi-beam scanning electron microscopy (SEM) sub-system. The SEM sub-system includes a multi-beam electron source configured to form a plurality of electron beams, a sample stage configured to secure a sample, an electron-optical assembly to direct the electron beams onto a portion of the sample, and a detector assembly configured to simultaneously acquire multiple images of the surface of the sample. The system includes a controller configured to receive the images from the detector assembly, identify a best focus image of images by analyzing one or more image quality parameters of the images, and direct the multi-lens array to adjust a focus of one or more electron beams based on a focus of an electron beam corresponding with the identified best focus image. 1. A multi-beam scanning electron microscopy apparatus comprising: a multi-beam electron source configured to form a plurality of electron beams;', 'a sample stage configured to secure a sample;', 'an electron-optical assembly including a set of electron-optical elements configured to direct at least a portion of the plurality of electron beams onto a portion of the sample; and', 'a detector assembly configured to simultaneously acquire a plurality of images of the surface of the sample, each image associated with an electron beam of the plurality of electron beams;, 'a multi-beam scanning electron microscopy sub-system comprising receive the plurality of images from the detector assembly;', 'identify at least one of a best focus image or a best astigmatism image of the plurality of images by analyzing one or more image quality parameters of at least some of the images of the plurality of the images; and', 'direct the multi-beam source to adjust at least one of focus or astigmatism of one or more electron beams based on at least one of focus or astigmatism of an electron beam corresponding with at least one of the identified best focus ...

APPARATUS OF PLURAL CHARGED-PARTICLE BEAMS

A secondary projection imaging system in a multi-beam apparatus is proposed, which makes the secondary electron detection with high collection efficiency and low cross-talk. The system employs one zoom lens, one projection lens and one anti-scanning deflection unit. The zoom lens and the projection lens respectively perform the zoom function and the anti-rotating function to remain the total imaging magnification and the total image rotation with respect to the landing energies and/or the currents of the plural primary beamlets. The anti-scanning deflection unit performs the anti-scanning function to eliminate the dynamic image displacement due to the deflection scanning of the plural primary beamlets. 176-. (canceled)77. An imaging system , comprising:a zoom lens and a projection lens configured to focus a plurality of beams of charged particles emanated from a sample surface to a plurality of detection elements of a detection device respectively,wherein the zoom lens and the projection lens are configured to keep a corresponding relationship of the plurality of beams of charged particles and the plurality of detection elements respectively.78. The imaging system according to claim 77 , wherein the zoom lens and the projection lens are configured to set an imaging magnification from the sample surface to a detection plane at the detection device.79. The imaging system according to claim 77 , whereinthe corresponding relationship includes imaging each probe spot on the sample surface onto one detection element among the plurality of detection elements, andthe zoom lens and the projection lens are configured to ensure the corresponding relationship.80. The imaging system according to claim 77 , further comprising:an objective lens configured to focus a plurality of charged particle beamlets onto the sample surface.81. The imaging system according to claim 80 , wherein the zoom lens and the projection lens are configured to eliminate imaging magnification variation ...

PARTICLE BEAM SYSTEM FOR ADJUSTING THE CURRENT OF INDIVIDUAL PARTICLE BEAMS

A particle beam system includes: a particle source to generate a beam of charged particles; a first multi-lens array including a first multiplicity of individually adjustable and focusing particle lenses so that at least some of the particles pass through openings in the multi-lens array in the form of a plurality of individual particle beams; a second multi-aperture plate including a multiplicity of second openings downstream of the first multi-lens array so that some of the particles which pass the first multi-lens array impinge on the second multi-aperture plate and some of the particles which pass the first multi-lens array pass through the openings in the second multi-aperture plate; and a controller configured to supply an individually adjustable voltage to the particle lenses of the first multi-lens array and thus individually adjust the focusing of the associated particle lens for each individual particle beam. 1. A multi-beam particle microscope , comprising:a particle source configured to generate a beam of charged particles;a first multi-lens array comprising a first multiplicity of individually adjustable and focusing particle lenses in a beam path of the charged particles so that at least some of the charged particles pass through openings in the first multi-lens array in the form of a plurality of individual charged particle beams;a first multi-aperture plate comprising a multiplicity of second openings in the beam path of the charged particles downstream of the first multi-lens array so that: i) some of the charged particles which pass the first multi-lens array impinge on the first multi-aperture plate and are absorbed by the first multi-aperture plate; and ii) some of the charged particles which pass the first multi-lens array also pass through the openings in the first multi-aperture plate; anda controller configured to supply an individually adjustable voltage to the particle lenses of the first multi-lens array to adjust the focusing of an ...

MULTI-BEAM PARTICLE BEAM SYSTEM AND METHOD FOR OPERATING SAME

A method of operating a multi-beam particle beam system includes: generating a multiplicity of particle beams such that they each pass through multipole elements that are either intact or defective; focusing the particle beams in a predetermined plane; determining excitations for the deflection elements of the multipole elements; exciting the deflection elements of the multipole elements that are intact with the determined excitations; modifying the determined excitations for the deflection elements of the multipole elements that are defective; and exciting the deflection elements of the defective multipole elements with the modified excitations. Modifying the determined excitations includes adding corrective excitations to the determined excitations. The corrective excitations are the same for all deflection elements of the defective multipole element. 1. A method , comprising:generating a plurality of particle beams such that each particle beam passes through a multipole element, wherein each multipole element comprises a plurality of deflection elements arranged in a circumferential direction around a center of the multipole element, and each multipole element is either intact or defective;focusing the particle beams in a predetermined plane;determining excitations for the deflection elements of the multipole elements to influence the particle beams passing through the multipole elements, wherein the excitations for the deflection elements of each multipole element are determined such that focusing of each particle beam in the predetermined plane satisfies a predetermined criterion;exciting the deflection elements of the multipole elements that are intact with the determined excitations;modifying the determined excitations for the deflection elements of at least one multipole element of the multipole elements that are defective; andexciting the deflection elements of the defective multipole element with the modified excitations,wherein modifying the determined ...

Aberration reduction in multipass electron microscopy

Improved aberration correction in multipass electron microscopy is provided by having Fourier images of the sample (instead of real images) at the reflection planes of the resonator. The resulting −1 magnification of the sample reimaging can be compensated by appropriate sample placement or by adding compensating elements to the resonator. This enables simultaneous correction of lowest order chromatic and spherical aberration from the electron objective lenses. If real images of the sample are at the reflection planes of the resonator instead, only the lowest order chromatic aberration can be corrected. 1. A multipass electron microscope comprising:an electron source;an electron resonator including two electron mirrors and configured to include a sample at a predetermined sample location, wherein the electron resonator is configured to provide multipass electron reimaging of the sample location such that diffraction planes of the sample location coincide with reflection planes of the electron mirrors;electron illumination optics configured to receive an electron beam from the electron source and to provide electron illumination to the electron resonator;electron projection optics configured to receive a multipass electron output from the electron resonator;an electron detector configured to receive the multipass electron output from the electron resonator and configured to provide an output image.2. The electron microscope of claim 1 , wherein an available sample area at the sample location is bisected by a midline into a first half-area and a second half-area claim 1 , and wherein a 180 degree image rotation provided by each electron mirror is compensated for by disposing the sample entirely within the first half-area.3. The electron microscope of claim 1 , wherein a 180 degree image rotation provided by each electron mirror is compensated for by disposing at least one compensating element between each electron mirror and the sample location.4. The electron ...

MULTIPLE CHARGED PARTICLE BEAM WRITING APPARATUS, AND MULTIPLE CHARGED PARTICLE BEAM WRITING METHOD

A multiple charged particle beam writing apparatus includes a rotatable shaping aperture array substrate, including plural openings, to form/shape multiple beams by letting portions of a charged particle beam individually pass through the plural openings, a data rotation correction circuitry to read writing data from a storage device, and generate pattern data, in which the entire figure pattern has been reversely rotated against a rotational deviation direction of an aperture array image by a rotational deviation amount of the aperture array image, using information on the rotational deviation amount of the aperture array image of the multiple beams on the target object caused by a residual error of rotation adjustment of the shaping aperture array substrate, and a blanking aperture array mechanism, rotatable with the shaping aperture array substrate, to provide individual blanking control of the multiple beams, based on the pattern data of the figure pattern reversely rotated. 1. A multiple charged particle beam writing apparatus comprising:a storage device configured to store writing data defining pattern data on a figure pattern to be written;a stage configured to be movable and to mount thereon a target object;an emission source configured to emit a charged particle beam;a shaping aperture array substrate, in which a plurality of openings are formed, configured to be rotatable and to form and shape multiple beams by letting portions of the charged particle beam individually pass through a corresponding one of the plurality of openings;a data rotation correction circuitry configured to read the writing data from the storage device, and, by using information on a rotational deviation amount of an aperture array image of the multiple beams on the target object caused by a residual error of rotation adjustment of the shaping aperture array substrate, to generate pattern data in which a whole of the figure pattern has been rotated in a reverse direction to a ...

APPARATUS OF PLURAL CHARGED-PARTICLE BEAMS

A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens. 148-. (canceled)49. An apparatus for manipulating beamlets of a multi-beam apparatus , the apparatus comprising:a charged particle source configured to generate a charged particle beam having a source crossover; direct a plurality of beamlets generated by the multi-beam apparatus from the charged particle beam through a primary optical axis of the multi-beam apparatus using at least two different deflection angles, and', 'facilitate forming a plurality of images of the source crossover on a sample; and, 'a plurality of electron optics elements configured toa plurality of beam-limit openings configured to limit currents of the plurality of beamlets.50. The apparatus of claim 49 , further comprising an objective lens above the sample claim 49 , and wherein the plurality of electron optics elements is further configured to:direct the plurality of beamlets to approach a front focal point of the objective lens.51. The apparatus of claim 50 , wherein the plurality of electron optics elements is further configured to direct the plurality of beamlets to approach or pass through the front focal point of the objective lens with different deflection angles claim 50 , wherein the deflection angles of the ...

Charged Particle Beam Apparatus

An object of the present disclosure is to provide a charged particle beam apparatus that can quickly find a correction condition for a new aberration that is generated in association with beam adjustment. In order to achieve the above object, the present disclosure proposes a charged particle beam apparatus configured to include an objective lens () configured to focus a beam emitted from a charged particle source and irradiate a specimen, a visual field movement deflector ( and ) configured to deflect an arrival position of the beam with respect to the specimen, and an aberration correction unit ( and ) disposed between the visual field movement deflector and the charged particle source, in which the aberration correction unit is configured to suppress a change in the arrival position of the beam irradiated under different beam irradiation conditions. 1. A method of positioning a visual field at a desired position on a specimen by using a visual field movement deflector that changes an arrival position of a beam emitted from a charged particle source , the method comprising:deflecting the beam to a desired arrival position by using the visual field movement deflector;adjusting a deflection condition of the visual field movement deflector so as to cancel an inclination of an incident beam when the beam is deflected to the desired arrival position; andadjusting an aberration correction unit disposed between the charged particle source and the visual field movement deflector so as to cancel off-axis chromatic aberration generated according to an amount of visual field movement by the visual field movement deflector and off-axis chromatic aberration generated by setting the deflection condition of the visual field movement deflector so as to cancel the inclination of the incident beam.2. A charged particle beam apparatus comprising:an objective lens configured to focus a beam emitted from a charged particle source and irradiate a specimen;a visual field movement ...

Charged Particle Beam Device

In a charged particle beam device including an objective lens that focuses a charged particle beam; a first deflector that deflects the charged particle beam to emit the charged particle beam to a sample from a direction different from an ideal optical axis of the objective lens; and a second deflector that deflects a charged particle emitted from the sample, a charged particle focusing lens to focus the charged particle emitted from the sample is disposed between the sample and the second deflector and strengths of the objective lens and the charged particle focusing lens are controlled, according to deflection conditions of the first deflector.

Charged Particle Beam Apparatus and Image Forming Method

In observation of a sample having a structure in its depth direction, a charged particle beam apparatus that can form an SEM image reflecting a sample shape at a desired depth by a single image acquisition while avoiding enlargement of the apparatus is provided. The apparatus has: an irradiation optical system for irradiating and scanning a charged particle beam generated from a charged particle source on the sample; a detection optical system having a detector that detects charged particles generated from the sample by the irradiation of the charged particle beam, and converts them into an electric signal at a predetermined sampling period; and an image processing unit for forming an image based on the electric signal from the detector, in which the image processing unit detects a peak of wave height values for each pixel from the electric signal at each sampling time, and forms the image based on the peak of the detected wave height values. 1. A charged particle beam apparatus , comprising:an irradiation optical system for irradiating and scanning a charged particle beam emitted from a charged particle source on a sample;a detection optical system having a detector that detects charged particles generated from the sample by irradiation of the charged particle beam and converts the detected charged particles into an electric signal at a predetermined sampling period; andan image processing unit for forming an image based on the electric signal from the detector,wherein the image processing unit counts the number of the charged particles detected for each pixel from an electric signal pulse at each sampling time, and forms an image based on wave height values of the electric signal pulse.2. The charged particle beam apparatus according to claim 1 ,wherein the image processing unit compares the electric signal pulse obtained at the each sampling time with the electric signal pulse at the latest sampling time, and detects a peak of the wave height values for the each ...

Method and device for manipulating particle beam

A method of manipulating an electron beam is disclosed. The method comprises transmitting the beam through a phase mask selected to spatially modulate a phase of the beam over a cross-section thereof.

MEASURING SPHERICAL AND CHROMATIC ABERRATIONS IN CATHODE LENS ELECTRODE MICROSCOPES

An electron microscope system and a method of measuring an aberration of the electron microscope system are disclosed. A method of controlling an aberration of an electron microscope includes obtaining a dispersed energy distribution for electrons at a diffraction plane of the electron microscope and placing an aperture at a selected location of the dispersed energy distribution in the diffraction plane. The method measures displacement of an image of the aperture in an image plane of the electron microscope for the selected location of the aperture. The method determines an aberration coefficient of the electron microscope from the measured displacement and the selected location of the aperture and alters a parameter of an element of the electron microscope to control the aberration of the electron microscope based at least in part on the determined aberration coefficient. 1. A method of controlling an aberration of an electron microscope , comprising:obtaining a dispersed energy distribution for electrons at a diffraction plane of the electron microscope;placing an aperture at a selected location of the dispersed energy distribution in the diffraction plane;measuring displacement of an image of the aperture in an image plane of the electron microscope for the selected location of the aperture;determining an aberration coefficient of the electron microscope from the measured displacement and the selected location of the aperture; andaltering a parameter of an element of the electron microscope to control the aberration of the electron microscope based at least in part on the determined aberration coefficient.2. The method of claim 1 , wherein the electron microscope includes an optical element for controlling an electron beam of the electron microscope claim 1 , the method further comprising altering a setting of the optical element to produce an aberration at the optical element to control the aberration of the electron microscope.3. The method of claim 2 , ...

Electron Microscope and Method of Measuring Aberrations

An electron microscope capable of measuring aberrations accurately is provided. The microscope is adapted to obtain scanning transmission electron (STEM) images by detecting electrons transmitted through a sample (S). The microscope ( 100 ) includes a segmented detector ( 20 ) having a detection surface ( 23 ) for detecting the electrons transmitted through the sample (S). The detection surface ( 23 ) is divided into detector segments (D 1 -D 16 ) for detecting the electrons transmitted through the sample (S). The microscope ( 100 ) further includes an aperture plate ( 30 ) for limiting the active areas of the detector segments (D 1 -D 16 ) on which the electrons impinge.

CHARGED-PARTICLE MICROSCOPE WITH ASTIGMATISM COMPENSATION AND ENERGY-SELECTION

A method of producing a corrected beam of charged particles for use in a charged-particle microscope, comprising the following steps: 1. A method of producing a corrected beam of charged particles for use in a charged-particle microscope , comprising:providing a non-monoenergetic input beam of charged particles; and a stigmator, thereby producing an astigmatism-compensated, energy-dispersed intermediate beam with a particular monoenergetic line focus direction; and', 'a beam selector, comprising a slit that is rotationally oriented so as to match a direction of the slit to said line focus direction, thereby producing an output beam comprising an energy-discriminated portion of said intermediate beam., 'passing said input beam through an optical module comprising a series arrangement of2. A method according to claim 1 , wherein:stigmator is used to mitigate a first, systematic astigmatism effect; andbeam selector is used to address a second, parasitic astigmatism effect.3. A method according to claim 2 , wherein;said first, systematic astigmatism effect is associated with eccentric lens traversal by said input beam; andsecond, parasitic astigmatism effect is associated with positioning errors in optical components upstream of the beam selector.4. A method according to claim 1 , wherein:beam selector comprises an opaque plate containing a plurality of slits of different orientations; andparticular slit is selected by effecting appropriate relative motion of said plate and said intermediate beam.5. A method according to claim 1 , wherein said beam selector comprises an opaque plate having a slit of adjustable orientation.6. A corrector device for use in a charged-particle microscope claim 1 , characterized in that it comprises:input for a non-monoenergetic input beam of charged particles; and stigmator, for producing an astigmatism-compensated, energy-dispersed intermediate beam with a particular monoenergetic line focus direction; and', 'beam selector, comprising a ...

CHARGED PARTICLE BEAM DEVICE AND ABERRATION CORRECTION METHOD FOR CHARGED PARTICLE BEAM DEVICE

A charged particle beam device using a multi-pole type aberration corrector includes: a charged particle source which generates a primary charged particle beam; an aberration correction optical system which corrects aberrations of the primary charged particle beam; a detection unit which detects a secondary charged particle generated from a sample irradiated with the primary charged particle beam whose aberrations have been corrected; an image forming unit which forms a charged particle image of the sample from a signal obtained by detecting the secondary charged particle; an aberration correction amount calculation unit which processes the charged particle image, separates aberrations having different symmetries, selects an aberration to be preferentially corrected from the separated aberrations, and calculates a correction amount of the aberration correction optical system; and an aberration correction optical system control unit which controls the aberration correction optical system based on the calculated correction amount. 1. A charged particle beam device , comprising:a charged particle source which generates a primary charged particle beam;an aberration correction optical system which corrects aberrations of the primary charged particle beam generated from the charged particle source;a detection unit which detects a secondary charged particle generated from a sample irradiated with the primary charged particle beam whose aberrations have been corrected by the aberration correction optical system;an image forming unit which forms a charged particle image of the sample from a signal obtained by detecting the secondary charged particle by the detection unit;an aberration correction amount calculation unit which processes the charged particle image formed by the image forming unit, separates aberrations having different symmetries in the primary charged particle beam, selects an aberration to be preferentially corrected from the separated aberrations, and ...

MULTIPOLE LENS, ABERRATION CORRECTOR USING SAME, AND CHARGED PARTICLE BEAM DEVICE

Provided is a winding type aberration corrector that generates a multipole field, in which mechanical positional accuracy required to dispose the current wires can be mitigated. For this purpose, a multipole lens constituting the aberration corrector includes a magnetic core, and a plurality of current wires, in which a plurality of grooves are provided in an inner wall of the magnetic core, centers of the plurality of grooves being disposed axisymmetrically relative to a central axis of the magnetic core, and main wire portions of the plurality of current wires are respectively disposed in the plurality of grooves of the magnetic core. 1. A multipole lens comprising:a magnetic core; anda plurality of current wires, whereina plurality of grooves are provided in an inner wall of the magnetic core, centers of the plurality of grooves being disposed axisymmetrically relative to a central axis of the magnetic core, andmain wire portions of the plurality of current wires are respectively disposed in the plurality of grooves of the magnetic core.2. The multipole lens according to claim 1 , whereineach of the plurality of grooves includes a taper portion expanding toward the inner wall, and an inner chamber in which the main wire portion of each current wire is disposed.3. The multipole lens according to claim 1 , whereineach current wire has a connection portion that guides each main wire portion into each groove from an outside of the magnetic core, or guides the main wire portion from inside the groove to the outside of the magnetic core, anda non-magnetic spacer is disposed between the connection portions of the current wires and the magnetic core.4. The multipole lens according to claim 1 , whereineach current wire has a connection portion that guides each main wire portion into each groove from an outside of the magnetic core, or guides the main wire portion from inside the groove to the outside of the magnetic core,the multipole lens further comprises magnetic lids ...

MULTIPLE ELECTRON BEAMS IRRADIATION APPARATUS

A multiple electron beam irradiation apparatus includes a shaping aperture array substrate to form multiple primary electron beams, a plurality of electrode array substrates stacked each to dispose thereon a plurality of electrodes each arranged at a passage position of each of the multiple primary electron beams, each of the multiple primary electron beams surrounded by an electrode of the plurality of electrodes when each of the multiple primary electron beams passes through the passage position, the first wiring and the second wiring applied with one of different electric potentials, and a stage to mount thereon a target object to be irradiated with the multiple primary electron beams having passed through the plurality of electrode array substrates, wherein, in each of the plurality of electrode array substrates, each of the plurality of electrodes is electrically connected to either one of the first wiring and the second wiring. 1. A multiple electron beam irradiation apparatus comprising:a forming mechanism that forms multiple primary electron beams;a plurality of electrode array substrates each that disposes thereon a plurality of electrodes each being arranged at a passage position of each of the multiple primary electron beams, the plurality of electrode array substrates being stacked, the each of the multiple primary electron beams being surrounded by an electrode of the plurality of electrodes in a case where the each of the multiple primary electron beams passes through the passage position;a first wiring and a second wiring that are applied with one of different electric potentials; anda stage that mounts thereon a target object to be irradiated with the multiple primary electron beams having passed through the plurality of electrode array substrates,wherein, in each of the plurality of electrode array substrates, each of the plurality of electrodes is electrically connected to either one of the first wiring and the second wiring.2. The apparatus ...

CHARGED-PARTICLE-BEAM DEVICE AND METHOD FOR CORRECTING ABERRATION

In aberration measurement, a focus or an inclination angle of a beam is changed to extract a characteristic amount from plural images of an electron microscope, so that an aberration coefficient indicating the size and direction of aberration is obtained. However, when the aberration is extremely large, the electron microscope images are greatly distorted, which causes difficulties in extraction of the feature amount. 1. A charged-particle-beam device comprising:a charged-particle-beam source;a charged-particle optical system that irradiates a specimen with charged particles emitted from the charged-particle-beam source;an aberration corrector that corrects an aberration of the charged-particle optical system;a control unit that controls the charged-particle optical system and the aberration corrector;a through-focus imaging unit that obtains a plurality of Ronchigrams in which a focal position of the charged-particle optical system is changed; andan aberration calculation unit that divides the obtained Ronchigram into a plurality of local areas, and calculates the amount of the aberration based on line focuses detected in the local areas.2. The charged-particle-beam device according to claim 1 ,wherein the aberration calculation unit fits iso-intensity lines in the local areas using ellipses and detects the line focuses based on the ellipses for the fitting.3. The charged-particle-beam device according to claim 2 ,wherein the iso-intensity lines in the local areas are calculated by an autocorrelation function or Fourier transform.4. The charged-particle-beam device according to claim 1 , further comprising:an input unit through which a setting value is input,wherein the through-focus imaging unit changes the focal position in a range based on the input setting value.5. The charged-particle-beam device according to claim 4 ,wherein the line focuses are detected in the local areas of each obtained Ronchigram on an under-focus side and on an over-focus side, andthe ...

Charged Particle Beam Device

Provided is a multifunctional charged particle beam device capable of inclining a beam with little aberration. The aberration is corrected by forming a local divergent field with a multipole, parallel current lines, or the like, matching the beam axis with the local divergent field via a conventional rotationally symmetric lens, deflector or astigmatism corrector, and counteracting an aberration occurring from another rotationally symmetric convex lens field. 1. A charged particle beam device comprising:a charged particle source;a rotationally symmetric lens system through which a charged particle beam generated from the charged particle source passes;an electromagnetic field generating unit configured to generate N-fold symmetry electromagnetic field (N is a natural number of 2 or more) around the optical axis; andan entrance deflector arranged at the entrance side of the electromagnetic field generating unit and configured to deflect the charged particle beam, whereinan aberration of the charged particle beam due to the lens system is corrected by deflecting the charged particle beam passing through the lens system via the entrance deflector to make the charged particle beam to enter a local divergent field formed in an off-axis region of the N-fold symmetry electromagnetic field.2. The charged particle beam device according to claim 1 , whereinthe electromagnetic field generating unit includes N parallel current lines arranged by angle division number N around the optical axis outside a space through which the charged particle beam passes.3. The charged particle beam device according to claim 2 , whereinthe charged particle beam is made to enter a range of a radius (R/3) from the center except for the center, where, as viewed in a plane perpendicular to the rotational symmetry axis of the lens system, the center is the position of the rotational symmetry axis, and R is a distance from the center to the parallel current lines.4. The charged particle beam device ...

Method of Aberration Correction and Charged Particle Beam System

There are disclosed an aberration correction method and a charged particle beam system capable of correcting off-axis first order aberrations. The aberration correction method is for use in the charged particle beam system () equipped with an aberration corrector () which has plural stages of multipole elements () and a transfer lens system () disposed between the multipole elements (). The method includes varying the excitation of the transfer lens system () and correcting off-axis first order aberrations. 1. A method of aberration correction for use in a charged particle beam system equipped with an aberration corrector that includes plural stages of multipole elements and a transfer lens system disposed between the multipole elements , said method comprising the step of:varying the excitation of the transfer lens system and correcting off-axis first order aberrations.2. The method of aberration correction as set forth in claim 1 , wherein said transfer lens system has a first transfer lens and a second transfer lens.3. The method of aberration correction as set forth in claim 2 , wherein during said step of correcting off-axis first order aberrations claim 2 , the excitations of said first and second transfer lenses are varied such that the first and second transfer lenses are both more strongly excited or both more weakly excited.4. The method of aberration correction as set forth in claim 2 , further comprising the step of varying the excitation of said transfer lens system and correcting the on-axis aberrations.5. The method of aberration correction as set forth in claim 4 , wherein during said step of correcting on-axis aberrations claim 4 , the excitations of said first and second transfer lenses are varied such that one of the first and second transfer lenses is more strongly excited while the other is more weakly excited.6. The method of aberration correction as set forth in claim 4 , wherein during said step of correcting on-axis aberrations claim 4 , ...

Electron Microscope and Method of Aberration Measurement

There is provided an electron microscope capable of measuring aberration with high accuracy. The electron microscope ( 100 ) comprises: an electron beam source ( 10 ) for producing an electron beam (EB); an illumination lens system ( 101 ) for focusing the electron beam (EB) onto a sample (S); a scanner ( 12 ) for scanning the focused electron beam (EB) over the sample (S); an aperture stop ( 30 ) having a plurality of detection angle-limiting holes ( 32 ) for extracting rays of the electron beam (EB) having mutually different detection angles from the electron beam (EB) transmitted through the sample (S); and a detector ( 20 ) for detecting the rays of the electron beam (EB) passed through the aperture stop ( 30 ).

Aberration Corrector and Electron Microscope

An aberration corrector for an electron microscope includes a geometric aberration corrector provided with a transfer lens system, wherein the transfer lens system includes an optical system for chromatic aberration correction, the optical system for chromatic aberration correction has a first portion, a second portion, and a third portion disposed along an optical axis, and each of the first portion, the second portion, and the third portion has a thickness in a direction along the optical axis and generates an electromagnetic field having two-fold symmetry in which an electric field having two-fold symmetry and a magnetic field having two-fold symmetry are superimposed. 1. An aberration corrector for an electron microscope , the aberration corrector comprising:a geometric aberration corrector provided with a transfer lens system,the transfer lens system including an optical system for chromatic aberration correction,the optical system for chromatic aberration correction having a first portion, a second portion, and a third portion disposed along an optical axis, andeach of the first portion, the second portion, and the third portion having a thickness in a direction along the optical axis and generating an electromagnetic field having two-fold symmetry in which an electric field having two-fold symmetry and a magnetic field having two-fold symmetry are superimposed.2. The aberration corrector according to claim 1 , whereinthe transfer lens system includes the optical system for chromatic aberration correction in two stages;a first optical system for chromatic aberration correction among the optical system for chromatic aberration correction in two stages generates a first electromagnetic field;a second optical system for chromatic aberration correction among the optical system for chromatic aberration correction in two stages generates a second electromagnetic field;the first optical system for chromatic aberration correction and the second optical system for ...

Aberration Correcting Device for an Electron Microscope and an Electron Microscope Comprising Such a Device

The invention relates to an aberration correcting device for correcting aberrations of focusing lenses in an electron microscope. The device comprises a first and a second electron mirror, each comprising an electron beam reflecting face. Between said mirrors an intermediate space is arranged. The intermediate space comprises an input side and an exit side. The first and second electron mirrors are arranged at opposite sides of the intermediate space, wherein the reflective face of the first and second mirror are arranged facing said intermediate space. The first mirror is arranged at the exit side and the second mirror is arranged at the input side of the intermediate space. In use, the first mirror receives the electron beam coming from the input side and reflects said beam via the intermediate space towards the second mirror. The second mirror receives the electron beam coming from the first mirror, and reflects the electron beam via the intermediate space towards the exit side. The incoming electron beam passes said second mirror at a position spaced apart from the reflection position on the second mirror. At least one of the electron mirrors is arranged to provide a correcting aberration to a reflected electron beam. 128.-. (canceled)29. An aberration correcting device for correcting aberrations of an electron beam in an electron microscope , wherein the aberration correcting device comprises:a first and a second electron mirror, each comprising an electron beam reflecting face,an intermediate space, wherein the intermediate space comprises a input side for inputting the electron beam into the intermediate space, and an exit side for exiting the electron beam out of the intermediate space,wherein the first and second electron mirror are arranged at opposite sides of the intermediate space, and wherein the reflective face of the first electron mirror and the reflective face of the second mirror are arranged to face said intermediate space,wherein the first ...

ABERRATION CORRECTOR AND CHARGED PARTICLE BEAM APPARATUS USING THE SAME

Provided are an aberration corrector that reduces irregularity of a magnetic field of a multipole to obtain an image of high resolution and a charged particle beam apparatus using the same. The aberration corrector includes a plurality of magnetic field type poles, a ring that magnetically connects the plurality of poles with one another and an adjustment member disposed between the pole and the ring to adjust a spacing between the pole and the ring per pole. 1. An aberration corrector , comprising:a plurality of magnetic field type poles;a ring that magnetically connects the plurality of poles with one another, andan adjustment member disposed between the pole and the ring to adjust a spacing between the pole and the ring per pole.2. The aberration corrector according to claim 1 , wherein “between the pole and the ring” is “between a side face of a groove or a hole formed in the ring so as to contain an end of the pole and a side face of the end of the pole”.3. The aberration corrector according to claim 1 , wherein the adjustment member is a tapered spacer disposed between the end of the pole and the ring.4. The aberration corrector according to claim 1 , wherein the adjustment member is a fixture that fixes the pole and the ring with a non-magnetic body.5. The aberration corrector according to claim 1 , wherein the adjustment member is a fixture that fixes the pole and the ring with screws made of a non-magnetic body at a plurality of places.6. The aberration corrector according to claim 1 ,wherein “between the pole and the ring” is “between a side face of a groove or a hole formed in the ring so as to contain an end of the pole and a side face of the end of the pole”, andthe adjustment member is a spacer to be interposed between facing side faces of the pole and the ring so as to make the spacing uniform.7. The aberration corrector according to claim 1 , wherein the adjustment member adjusts a spacing between the pole and the ring such that magnetic ...

Method and System for Reducing Charging Artifacts in Scanning Electron Microscopy Images

A scanning electron microscopy apparatus for mitigating charging artifacts includes a scanning electron microscopy sub-system for acquiring multiple images from a sample. The images include one or more sets of complimentary images. The one or more sets of complimentary images include a first image acquired along a first scan direction and a second image acquired along a second scan direction opposite to the first scan direction. The apparatus includes a controller communicatively coupled to the scanning electron microscopy sub-system. The controller is configured to receive images of the sample from the scanning electron microscopy sub-system. The controller is further configured to generate a composite image by combining the one or more sets of complimentary images. 1. A scanning electron microscopy apparatus comprising:a scanning electron microscopy sub-system configured to acquire a plurality of images from a sample, wherein the plurality of images includes at least one set of complimentary images including a first image acquired along a first scan direction and at least a second image acquired along a second scan direction opposite to the first scan direction, wherein at least one of the first image or the at least the second image include one or more charging artifacts; anda controller communicatively coupled to one or more portions of the scanning electron microscopy sub-system, the controller including one or more processors configured to execute program instructions configured to cause the one or more processors to:receive the plurality of images of the sample from the scanning electron microscopy sub-system; andgenerate a composite image by combining the at least one complimentary set of images including the first image acquired along the first scan direction and the at least the second image acquired along the second scan direction opposite to the first scan direction, wherein an intensity of one or more charging artifacts in the composite image is less ...

POST COLUMN FILTER WITH ENHANCED ENERGY RANGE

A method of operating a Post Column Filter (PCF) in a Scanning/Transmission Electron Microscope, and a Post Column Filter configured to operate according to the method. In an embodiment, the method includes receiving, at an entrance plane, an incoming beam of electrons; dispersing, by an energy dispersive element, the incoming beam of electrons into an energy dispersed beam of electrons; disposing a first plurality of quadrupoles between the entrance plane and a slit plane; operating the PCF in an EELS mode; and operating the PCF in an EFTEM mode. Operating the PCF in an EELS mode includes exciting one or more quadrupoles of the first plurality of quadrupoles at a first excitation level, wherein the first excitation level does not enlarge the energy dispersion of the energy dispersed beam of electrons; and forming an image of the energy dispersed beam of electrons on the image plane, the image being an EELS spectrum. Operating the PCF in the EFTEM mode includes including a slit at the slit plane in an optical path; exciting one or more quadrupoles of the first plurality of quadrupoles at a second excitation level, the second excitation level different from the first excitation level; forming an energy dispersed focus of the energy dispersed beam of electrons on the slit at the slit plane; and enlarging the energy dispersion of the energy dispersed beam of electrons caused by the energy dispersive element based on the one or more first plurality quadrupoles excited at the second excitation level. 1. A method of operating a Post Column Filter (PCF) in a Scanning/Transmission Electron Microscope , the method comprising:receiving, at an entrance plane, an incoming beam of electrons;dispersing, by an energy dispersive element, the incoming beam of electrons into an energy dispersed beam of electrons;disposing a first plurality of quadrupoles between the entrance plane and a slit plane; exciting one or more quadrupoles of the first plurality of quadrupoles at a first ...

MULTI-CHARGED PARTICLE BEAM IRRADIATION APPARATUS AND MULTI-CHARGED PARTICLE BEAM INSPECTION APPARATUS

A multi-charged particle beam irradiation apparatus includes a forming mechanism to form multiple charged particle beams, a multipole deflector array to individually deflect each beam of the multiple charged particle beams so that a center axis trajectory of each beam of the multiple charged particle beams may not converge in a region of the same plane orthogonal to the direction of a central axis of a trajectory of the multiple charged particle beams, and an electron optical system to irradiate a substrate with the multiple charged particle beams while maintaining a state where the multiple charged particle beams are not converged. 1. A multi-charged particle beam irradiation apparatus comprising:a forming mechanism configured to form multiple charged particle beams;a multipole deflector array configured to individually deflect each beam of the multiple charged particle beams so that a center axis trajectory of the each beam of the multiple charged particle beams does not converge in a region of a same plane orthogonal to a direction of a central axis of a trajectory of the multiple charged particle beams; andan electron optical system configured to irradiate a substrate with the multiple charged particle beams while maintaining a state where the multiple charged particle beams are not converged.2. The apparatus according to claim 1 , wherein the multipole deflector array individually deflects the each beam of the multiple charged particle beams so that a peripheral beam claim 1 , located on a peripheral side off a center claim 1 , in the multiple charged particle beams irradiates the substrate without passing through the central axis of the trajectory of the multiple charged particle beams.3. The apparatus according to claim 1 , wherein the multipole deflector array is arranged at an intermediate image plane position of the multiple charged particle beams.4. The apparatus according to claim 1 , further comprising:a second multipole deflector array, in a case of ...

SCANNING ELECTRON MICROSCOPE AND ELECTRON TRAJECTORY ADJUSTMENT METHOD THEREFOR

To provide a scanning electron microscope having an electron spectroscopy system to attain high spatial resolution and a high secondary electron detection rate under the condition that energy of primary electrons is low, the scanning electron microscope includes: an objective lens primary electron acceleration means that accelerates primary electrons primary electron deceleration means that decelerates the primary electrons and irradiates them to a sample a secondary electron deflector that deflects secondary electrons from the sample to the outside of an optical axis of the primary electrons; a spectroscope that disperses secondary electrons; and a controller that controls application voltage to the objective lens, the primary electron acceleration means and the primary electron deceleration means so as to converge the secondary electrons to an entrance of the spectroscope. 1. A scanning electron microscope comprising:an electron source;an objective lens that converges primary electrons emitted from the electron source on a sample;primary electron acceleration means that accelerates the primary electrons and passes them through the objective lens;primary electron deceleration means that decelerates the primary electrons and irradiates them to the sample;a secondary electron deflector that deflects secondary electrons from the sample, caused from the primary electrons converged with the objective lens, to the outside of an optical axis of the primary electrons;a spectroscope for dispersion of the secondary electrons;a detector that detects secondary electrons passed through the spectroscope; anda controller that controls application voltage to at least one of the objective lens, the primary electron acceleration means and the primary electron deceleration means so as to converge the secondary electrons to an entrance of the spectroscope, with a lens formed with the objective lens, the primary electron acceleration means and the primary electron deceleration means.2. ...

Scanning Transmission Electron Microscope and Adjustment Method of Optical System

A scanning transmission electron microscope that scans a specimen with an electron probe to acquire an image. The scanning transmission electron microscope includes: an optical system which includes a condenser lens and an objective lens; an imaging device which is arranged on a back focal plane or a plane conjugate to the back focal plane of the objective lens and which is capable of photographing a Ronchigram; and a control unit which performs adjustment of the optical system. The control unit is configured or programed to: acquire an image of a change in a Ronchigram that is attributable to a change in a relative positional relationship between the specimen and the electron probe; and determine a center of the Ronchigram based on the image of the change in the Ronchigram. 1. A scanning transmission electron microscope that scans a specimen with an electron probe to acquire an image , the scanning transmission electron microscope comprising:an optical system which comprises a condenser lens and an objective lens;an imaging device which is arranged on a back focal plane or a plane conjugate to the back focal plane of the objective lens and which is configured to photograph a Ronchigram; anda control unit which performs adjustment of the optical system,the control unit configured or programmed to:acquire an image of a change in a Ronchigram that is attributable to a change in a relative positional relationship between the specimen and the electron probe; anddetermine a center of the Ronchigram based on the image of the change in the Ronchigram.2. The scanning transmission electron microscope according to claim 1 , whereinthe image of the change in the Ronchigram is an image of a Ronchigram having been photographed by the imaging device while changing relative positions of the specimen and the electron probe.3. The scanning transmission electron microscope according to claim 1 , whereinthe image of the change in the Ronchigram is an image obtained from a plurality of ...

DEVICE AND METHOD FOR FORMING A PLURALITY OF CHARGED PARTICLE BEAMLETS

Disclosed herein is charged particle beam device and a a method of operating a charged particle beam device, comprising forming a plurality of focused charged particle beamlets. Charged particles are directed from a charged particle source to a multi-aperture plate. A plurality of beamlets are passed through a plurality of apertures of the multi-aperture plate. The beamlets include an inner beamlet of charged particles and a plurality of outer beamlets of charged particles. The outer beamlets are focused to form a plurality of outer focal points on a virtual ring having a center along an optical axis, the outer beamlets subjected to a field curvature aberration, such that the virtual ring is axially displaced relative to a virtual focal point of an uncompensated inner beamlet. A compensated inner beamlet is focused to a compensated focal point. The inner beamlet is compensated to form the compensated inner beamlet; and the compensated focal point is coplanar with the virtual ring. 1. A method of operating a charged particle beam device , comprising forming a plurality of focused charged particle beamlets , comprising: [ an inner beamlet of charged particles and', 'a plurality of outer beamlets of charged particles;, 'passing a plurality of beamlets through a plurality of apertures of the multi-aperture plate, the beamlets including'}, 'the outer beamlets subjected to a field curvature aberration, such that the virtual ring is axially displaced relative to a virtual focal point of an uncompensated inner beamlet;', 'focusing the outer beamlets to form a plurality of outer focal points on a virtual ring having a center along an optical axis,'}, 'focusing a compensated inner beamlet to a compensated focal point;', 'compensating the inner beamlet to form the compensated inner beamlet; and', 'the compensated focal point is coplanar with the virtual ring., 'directing charged particles from a charged particle source to a multi-aperture plate;'}2. The method of claim 1 , ...

Charged Particle Beam Device

A processing apparatus and a processing method are provided, which use a charged particle beam device that achieves defection of secondary electrons/reflected electrons at a large angle and cancels out noises of an electromagnetic deflector and an electrostatic deflector to suppress a position shift of a primary electron beam caused by circuit noises of a primary beam/secondary beam separation circuit. In the charged particle beam device that includes an electronic optical system radiating a concentrated electron beam onto a sample placed on a stage to perform scanning and captures an image of the sample, a reference signal and a signal generation unit of a voltage-source control signal applied to the electrostatic deflector generating the electrostatic deflector and a reference signal and a signal generation unit of a current-source control signal applied to the electromagnetic deflector generating a magnetic field are made common in an overlapping-electromagnetic-deflector control unit that controls a path of the secondary electrons/reflected electrons incident on a detector, and frequency characteristics and phase characteristics of the voltage control signal are coincident with those of the current-source control signal.

DEVICE AND METHOD FOR OPERATING A CHARGED PARTICLE DEVICE WITH MULTIPLE BEAMLETS

A method of operating a charged particle beam device is disclosed, including passing each of a plurality of beamlets through a deflector and a scanner, in that order. Each of the beamlets is focused with an objective lens on a sample to form a plurality of focal spots, forming an array. A first beamlet is focused on a first spot and a second beamlet is focused on a second spot. In a centered configuration of the device, each of the plurality of beamlets is directed by the deflector toward a coma free point. In a beamlet-displaced configuration of the device, the scanner is scanned such that the first beamlet passes through an acceptable aberrations point, the first beamlet scanning a displaced first field of view; and the first spot is displaced from the regular first focal spot to a displaced first focal spot. 1. A method of operating a charged particle beam device , comprising:passing each of a plurality of beamlets through a deflector and a scanner, wherein the beamlets pass through the scanner after passing through the deflector;focusing, with an objective lens, each of the plurality of beamlets on a sample to form a plurality of focal spots forming an array, including focusing a first beamlet on a first spot, and focusing a second beamlet on a second spot; 'directing, with the deflector, each of the plurality of beamlets toward a coma free point on a virtual plane perpendicular to an optical axis, wherein the first spot is a regular first focal spot formed by the first beamlet, and scanning the scanner such that each of the beamlets scans a regular field of view, including the first beamlet scanning a regular first field of view and the second beamlet scanning a regular second field of view; and', 'in a centered configuration of the device,'} scanning the scanner such that the first beamlet passes through an acceptable aberrations point on the virtual plane, the first beamlet scanning a displaced first field of view, wherein', 'the first spot is displaced from ...