ИСТОЧНИК ПЛАЗМЫ

Изобретение относится к области плазменной техники. Источник (1) плазмы, предназначенный для нанесения покрытия на подложку (9) и выполненный с возможностью соединения с источником (Р) энергии, содержит электрод (2), магнитный узел (4), находящийся на периферии упомянутого электрода и содержащий совокупность магнитов, соединенных между собой магнитной опорой (46), включающий в себя по меньшей мере первый и второй центральные магниты (43, 44) и по меньшей мере один головной магнит (45), электрически изолирующую оболочку (5), расположенную таким образом, чтобы окружать электрод и магниты. Технический результат - повышение качества покрытия путем повышения плотности и однородности плазмы. 2 н. и 18 з.п. ф-лы, 7 ил., 2 табл.

СВЧ-ПЛАЗМЕННЫЙ РЕАКТОР ДЛЯ ИЗГОТОВЛЕНИЯ СИНТЕТИЧЕСКОГО АЛМАЗНОГО МАТЕРИАЛА

ABSTIMMBARES MEHRZONEN-GASINJEKTIONSSYSTEM

A microwave plasma reactor for manufacturing synthetic diamond material

Microwave plasma reactor (MW-CVD) for chemical vapour deposition (CVD) is described. The plasma chamber 2 forms a resonant cavity 10 for supporting primary microwave resonance mode with a primary microwave resonance mode frequency (f). A number of microwave sources are coupled to the plasma chamber 10 to generate and feed microwaves with a total microwave power (PT) into the plasma chamber 2. A gas flow system 12,14 for feeding process gases into the plasma chamber and removing them is detailed, together with a substrate holder 16 located in the plasma chamber and comprising a supporting surface for supporting a substrate 18 on which the synthetic diamond material is to be deposited in use.

SYMMETRIC PLASMA PROCESS CHAMBER

Electron cyclotron resonance plasma source and method of operation

A method and apparatus are disclosed employing electron cyclotron resonant (ECR) heating to produce plasma for applications including but not limited to chemical vapor deposition and etching. A magnetic field is formed by magnets circumferentially arranged about a cylindrical and symmetrical chamber with microwave power injected perpendicularly to a longitudinal axis of the chamber for preventing line-of-sight communication of resulting energetic electrons with a specimen being treated. The microwave power is distributed uniformly around the circumference of the chamber by applicators formed by one or more pairs of annular sectors, each of which comprises a slotted wave guide antenna, and coupled to an external source of microwave power by a hybrid coupler. A magnetic field free region produces uniformity of plasma distribution in a plasma stream approaching the outlet. The above characteristics are maintained for the plasma stream over substantial transverse dimensions larger than the ...

HEATING PLATE WITH PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING

An exemplary method is directed to powering heaters in a substrate support assembly on which a semiconductor substrate is supported. The support assembly has an array of heaters powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to a power supply and at least two of the heaters and each power return line is connected to at least two of the heaters, and a switching device which independently connects each one of the heaters to one of the power supply lines and one of the power return lines so as to provide time-averaged power to each of the heaters by time divisional multiplexing of switches of the switching device. The method includes supplying power to each of the heaters sequentially using a time-domain multiplexing scheme.

Plasma Diffuser

The present invention concerns a method for at least partially preventing discolouration of a substrate by a plasma coating process, by diffusing a plasma prior to and/or during depositing of said plasma on said substrate to form a coating. The present invention also concerns a plasma coating apparatus comprising a plasma diffuser for homogenizing a plasma density nearby a substrate to be coated. 1. Method for at least partially preventing discolouration of a substrate by a plasma coating process , by diffusing a plasma with a plasma diffuser prior to and/or during depositing of said plasma on said substrate to form a coating.2. Method according to claim 1 , wherein said substrate is pre-treated by a pre-treatment plasma claim 1 , wherein said pre-treatment plasma is diffused with a plasma diffuser prior to and/or during reaction of said pre-treatment plasma with said substrate claim 1 , thereby preferably cleaning claim 1 , activating and/or etching said substrate.3. Method according to claim 1 , wherein said plasma comprises monomers and preferably wherein said coating is a polymer coating.45. Method according to claim 1 , wherein said plasma is provided at low pressure claim 1 , preferably at a pressure lower than atmospheric pressure claim 1 , more preferably lower than 1000 mTorr and/or preferably higher than mTorr.5. Method according to claim 1 , wherein the coating performance in terms of oil repellency claim 1 , spray test and wash-ability is not negatively influenced.6. Method according to claim 1 , whereby said substrate is coated in a plasma coating apparatus comprising a plasma chamber which comprises a grounded (M) electrode claim 1 , a radiofrequency (RF) electrode and said plasma diffuser claim 1 , preferably comprising one or more plasma diffuser materials positioned between said electrodes claim 1 , for homogenizing a plasma density nearby said substrate to reduce discolouration of said substrate after processing claim 1 , the plasma diffuser ...

Apparatus and a Method of Controlling Thickness Variation in a Material Layer Formed Using Physical Vapour Deposition

A magnet assembly is disclosed for steering ions used in the formation of a material layer upon a substrate during a pulsed DC physical vapour deposition process. Apparatus and methods are also disclosed incorporating the assembly for controlling thickness variation in a material layer formed via pulsed DC physical vapour deposition. The magnet assembly comprises a magnetic field generating arrangement for generating a magnetic field proximate the substrate and means for rotating the ion steering magnetic field generating arrangement about an axis of rotation, relative to the substrate. The magnetic field generating arrangement comprises a plurality of magnets configured to an array which extends around the axis of rotation, wherein the array of magnets are configured to generate a varying magnetic field strength along a radial direction relative to the axis of rotation.

Flim forming method of carbon-containing film by microwave plasma

There is provided a film forming method of forming a carbon-containing film by a microwave plasma from a microwave source, the film forming method including: a dummy step of performing a dummy process by generating plasma of a first carbon-containing gas within a processing container; a placement step of placing a substrate on a stage within the processing container; and a film forming step of forming the carbon-containing film on the substrate using plasma of a second carbon-containing gas.

Vorrichtung zum Beschichten eines Substrats

Vorrichtung (1) zum Beschichten eines Substrats aus Teilchen mittels Kathodenzerstäubung mit einer beweglichen, gegenüber der Horizontalebene schräggestellten Substratschale (4), wobei die Substratschale (4) lose in einem um eine Rotationsachse (10) rotierbaren, schräggestellten, eine Seitenwand (8) aufweisenden Teller (3) angeordnet ist, wobei eine Außenwand (19) der Substratschale (4) intermittierend mit der Innenseite (17) der Seitenwand (8) des Tellers (3) in Kontakt steht.

PLASMA SOURCE

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

반도체 프로세싱을 위한 평탄한 히터존들을 가진 가열판

... 반도체 플라즈마 프로세싱 장치 내의 기판 지지 어셈블리용 가열판은, 스케일가능한 멀리플렉싱 레이아웃으로 배열된 다중의 독립적으로 제어가능한 평탄한 히터존들, 및 그 평탄한 히터존들을 독립적으로 제어하고 전력공급하기 위한 전자장치를 포함한다. 가열판이 통합되는 기판 지지 어셈블리는 정전 클램핑 전극 및 온도 제어된 베이스 플레이트를 포함한다. 가열판을 제작하는 방법은 평탄한 히터존들, 전력 공급 라인들, 전력 복귀 라인들 및 비아들을 갖는 세라믹 또는 폴리머 시트들을 함께 본딩하는 단계를 포함한다.

CONTOURED SHOWERHEAD FOR IMPROVED PLASMA SHAPING AND CONTROL

SYMMETRIC PLASMA PROCESS CHAMBER

Symmetric plasma process chamber

Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

EDGE UNIFORMITY TUNABILITY ON BIPOLAR ELECTROSTATIC CHUCK

Embodiments of the present technology may include an electrostatic chuck. The chuck may include a top surface, defining a recessed portion of the chuck. The recessed portion of the chuck may be configured to support a substrate. The chuck may further include a first electrode and a second electrode. The first electrode and the second electrode may be disposed within the chuck. The first electrode and the second electrode may be substantially coplanar. In addition, the chuck may include a third electrode. The third electrode may be disposed within the chuck. Furthermore, the third electrode may have an annular shape. The third electrode may be separated from the first electrode and the second electrode. In addition, the third electrode may be substantially parallel to the first electrode and the second electrode. Systems and methods including the electrostatic chuck are also described. 1. An electrostatic chuck , the chuck comprising: the top surface defines a recessed portion of the chuck,', 'the recessed portion of the chuck is configured to support a substrate, and', 'the recessed portion of the chuck is characterized by a first diameter;, 'a top surface, wherein the first electrode and the second electrode are disposed within the chuck,', 'the first electrode and the second electrode are substantially coplanar, and', 'the first electrode is separated from the second electrode; and, 'a first electrode and a second electrode, wherein the third electrode is disposed within the chuck,', 'the third electrode has an annular shape,', 'the third electrode is characterized by an inner diameter,', 'the inner diameter is greater than the first diameter,', 'the third electrode is separated from the first electrode and the second electrode, and', 'the third electrode is substantially parallel to the first electrode and the second electrode., 'a third electrode, wherein2. The chuck of claim 1 , wherein the first electrode and the second electrode have substantially the same ...

TAPERED UPPER ELECTRODE FOR UNIFORMITY CONTROL IN PLASMA PROCESSING

An upper electrode for use in a substrate processing system includes a lower surface. The lower surface includes a first portion and a second portion and is plasma-facing. The first portion includes a first surface region that has a first thickness. The second portion includes a second surface region that has a varying thickness such that the second portion transitions from a second thickness to the first thickness.

TUNABLE MULTI-ZONE GAS INJECTION SYSTEM

Vorrichtung zum Beschichten eines Substrats

Vorrichtung (1) zum Beschichten eines Substrats aus Teilchen mittels Kathodenzerstäubung mit einer beweglichen, gegenüber der Horizontalebene schräggestellten Substratschale (4), wobei die Substratschale (4) lose in einem um eine Rotationsachse (10) rotierbaren, schräggestellten, eine Seitenwand (8) aufweisenden Teller (3) angeordnet ist, wobei eine Außenwand (19) der Substratschale (4) intermittierend mit der Innenseite (17) der Seitenwand (8) des Tellers (3) in Kontakt steht.

ANODE SHIELD

A sputter system and an anode and anode shield assembly that provide for improved grounding for extended sputter cycles.

A MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber defining a resonant cavity for supporting a primary microwave resonance mode having a primary microwave resonance mode frequency f; a plurality of microwave sources coupled to the plasma chamber for generating and feeding microwaves having a total microwave power ?t into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use, wherein the plurality of microwave sources are configured to couple at least 30% of the total microwave power ?t into the plasma chamber in the primary microwave resonance mode frequency f, and wherein at least some of the plurality of microwave sources are solid state ...

The collimator, for manufacturing a semiconductor device apparatus and method

SHOWERHEAD AND SUBSTRATE PROCESSING UNIT INCLUDING THE SHOWERHEAD, PLASMA SUPPLYING METHOD USING THE SHOWERHEAD TO SECURE THE PROCESS UNIFORMITY

PURPOSE: A showerhead and substrate processing unit including the showerhead, plasma supplying method using the showerhead are provided to control the supply state of the plasma and to secure the process uniformity. CONSTITUTION: The first ring(64a) has the internal spray holes. The second ring(64b) is separated from the first ring while covering the first ring and is arranged in the outer side of the first ring. The connecting member connects the first ring and the second ring. The outer side nozzle is formed between the first ring and the second ring. The shower head(60) is separately placed from the first ring at the inner side nozzle formed in the inner side of the first ring. The innermost spray hole is formed in the inner side of the third ring(64c). © KIPO 2009 ...

안정적인 반응성 스퍼터링 프로세스를 위한 타깃 에이지 보상 방법

... 본 발명은 타깃에서의 스퍼터링 특성뿐 아니라 침착 속도를 타깃 에이지에 대해 독립적으로 일정하게, 또는 적어도 산업 생산 맥락의 허용가능한 범위 내에 유지하는 반응성 스퍼터링 프로세스를 수행하기 위한 방법에 관한 것이다.

METHODOLOGY FOR CHAMBER PERFORMANCE MATCHING FOR SEMICONDUCTOR EQUIPMENT

Embodiments of the present disclosure provide methodology to match and calibrate processing chamber performance in a processing chamber. In one embodiment, a method for calibrating a processing chamber for semiconductor manufacturing process includes performing a first predetermined process in a processing chamber, collecting a first set of signals transmitted from a first group of sensors disposed in the processing chamber to a controller while performing the predetermined process, analyzing the collected first set of signals, comparing the collected first set of signals with database stored in the controller to check sensor responses from the first group of sensors, calibrating sensors based on the collected first set of signals when a mismatch sensor response is found, subsequently performing a first series of processes in the processing chamber, and collecting a second set of signals transmitted from the sensors to the controller while performing the series of processes. 1. A method for calibrating a processing chamber for semiconductor manufacturing process , comprising:performing a first predetermined process in a processing chamber;collecting a first set of signals transmitted from a first group of sensors disposed in the processing chamber to a controller while performing the predetermined process;analyzing the collected first set of signals;comparing the collected first set of signals with database stored in the controller to check sensor responses from the first group of sensors;calibrating sensors based on the collected first set of signals when a mismatch sensor response is found;subsequently performing a first series of processes in the processing chamber; andcollecting a second set of signals transmitted from the sensors to the controller while performing the series of processes.2. The method of claim 1 , further comprising:performing a second series of processes on a group of substrates transferred in the processing chamber respectively; andforming a ...

SUBSTRATE SUPPORT ASSEMBLY WITH NON-UNIFORM GAS FLOW CLEARANCE

The embodiments described herein generally relate to a substrate support assembly for use in a plasma processing chamber to provide non-uniform gas flow flowing between the substrate support assembly and sidewalls of the plasma processing chamber. In one embodiment, a substrate support assembly includes a substrate support assembly including a substrate support body defining at least a first side of the substrate support body, and a corner region and a center region formed in the first side of the substrate support body, wherein the corner region has a corner width that is smaller than a center width of the center region, the widths defined between a center axis and the first side of the substrate support body. 1. A substrate support assembly , comprising:a substrate receiving surface and a bottom surface; andsides circumscribing the substrate receiving surface vertically connected between the substrate receiving surface and the bottom surface, the sides defining a perimeter of the substrate support assembly; wherein a corner region and a center region defined on the sides, wherein the corner region has a corner width that is smaller than a center width of the center region, the widths defined between a center axis and the first side of the substrate support body.2. The substrate support assembly of claim 1 , wherein a difference between the center width to the corner width is between about 5 mm and about 60 mm.3. The substrate support assembly of claim 1 , wherein the center width is between about 30% and about 90% larger than the corner width.4. The substrate support assembly of further comprising:a rectangular substrate support body having four sides; anda removable skirt attached to one of the sides of the rectangular substrate support body, wherein the removable skirt defines a boundary the corner region and the center region.5. The substrate support assembly of claim 1 , wherein the perimeter has a geometry that preferentially directs flow to one region of the ...

AUTOMATED FEEDFORWARD AND FEEDBACK SEQUENCE FOR PATTERNING CD CONTROL

A method for performing a feedback sequence for patterning CD control. The method including performing a series of process steps on a wafer to obtain a plurality of features, wherein a process step is performed under a process condition. The method including measuring a dimension of the plurality of features after performing the series of process steps. The method including determining a difference between the dimension that is measured and a target dimension for the plurality of features. The method including modifying the process condition for the process step based on the difference and a sensitivity factor for the plurality of features relating change in dimension and change in process condition.

Method for manufacturing sputtering target, method for forming oxide film, and transistor

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

抵抗率と不均一性が減少された薄膜を形成する物理蒸着処理のためのマグネット

DURCH ELEKTRONENZYLOTRON HERVORGEBRACHTE RESONANZPLASMAQUELLE UND ARBEITSWEISE

THROUGH ELEKTRONENZYLOTRON BROUGHT OUT SOURCE OF RESONANCE PLASMA AND FUNCTION

Close coupled match structure for rf drive electrode

TARGET AGE COMPENSATION METHOD FOR PERFORMING STABLE REACTIVE SPUTTERING PROCESSES

The present invention relates to a method for performing reactive sputtering processes maintaining the sputtering characteristic at the target as well as the deposition rate constant, or at least in a for the industrial production context acceptable range, independent on the target age.

PLASMA SOURCE

Source de plasma (1) destinée au dépôt d'un revêtement sur un substrat (9) et apte à être reliée à une source d'énergie (P) comprenant une électrode (2), un ensemble magnétique (4) situé en périphérie de ladite électrode et comprenant un ensemble d'aimants reliés entre eux par un support magnétique (46) comprenant un premier et un deuxième aimant central (43, 44) et au moins un aimant de tête (45) et une enceinte électriquement isolante (5) agencée de sorte à entourer l'électrode et les aimants.

A MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber defining a resonant cavity for supporting a primary microwave resonance mode having a primary microwave resonance mode frequency f; a plurality of microwave sources coupled to the plasma chamber for generating and feeding microwaves having a total microwave power ?t into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use, wherein the plurality of microwave sources are configured to couple at least 30% of the total microwave power ?t into the plasma chamber in the primary microwave resonance mode frequency f, and wherein at least some of the plurality of microwave sources are solid state ...

Symmetrical plasma processing chamber

Used to apply the coating to the spherical member method and the table assembly

TUNABLE MULTI-ZONE GAS INJECTION SYSTEM

Control for RF balancing circuit and cross-coupled SIMO transmission network

A plasma reactor for processing a workpiece with an array of plasma point sources

A plasma source consisting of an array of plasma point sources that controls generation of charged particles and radicals spatially and temporally over a user defined region.

Heating plate with planar heater zones for semiconductor processing and manufacturing methods thereof

METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT

A plasma deposition apparatus includes a waveguide conduit having a plurality of slots therein. The waveguide conduit is coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of slots. One or more pipes have an outlet end positioned at each of the plurality of slots for transporting material from one or more material sources to the plurality of slots. The apparatus also includes a plasma chamber in communication with the waveguide tube through the plurality of slots. The plasma chamber receives through said plurality of slots microwaves from the waveguide tube and material to be melted or evaporated from the one or more pipes. The plasma chamber includes a plurality of magnets disposed in an outer wall of the plasma chamber for forming a magnetic field in the plasma chamber. The plasma chamber further includes one or more outlet openings for discharging plasma containing material to be deposited on a substrate.

CLOSE COUPLED MATCH STRUCTURE FOR RF DRIVE ELECTRODE

An electrode assembly for supplying RF power from a RF power source having an output impedance to an electrically non-linear medium, the assembly being composed of: a drive electrode in communication with the medium and forming with the medium a load impedance; and an impedance match network coupled between the RF power source and the drive electrode for matching the output impedance of the RF source to the load impedance. The match network has an output component that is directly connected to the drive electrode. The electrode assembly can further have a body of RF energy absorbing material disposed between the match network and the drive electrode, the absorbing material having a frequency dependent energy absorption characteristic which increases with frequency.

Method of Filling Recess and Processing Apparatus

A method of filling a germanium film in a recess on a substrate to be processed having an insulating film on which the recess is formed on a surface of the substrate, includes forming a first germanium film so as to fill the recess by supplying a germanium raw material gas to the substrate, etching the first germanium film with an etching gas containing an excited H2 gas or NH3 gas, and forming a second germanium film on the first germanium film so as to fill the recess by supplying a germanium raw material gas.

Symmetric plasma process chamber

Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

Contoured showerhead for improved plasma shaping and control

Semiconductor processing chamber showerheads with contoured faceplates, as well as techniques for producing such faceplates, are provided. Data describing deposition rate as a function of gap distance between a reference showerhead faceplate and a reference substrate may be obtained, as well as data describing deposition rate as a function of location on the substrate when the reference showerhead and the reference substrate are in a fixed arrangement with respect to each other. The two data sets may be used to determine offsets from a reference plane associated with the faceplate that determine a contour profile to be used with the faceplate.

TARGETED HEAT CONTROL SYSTEMS

Exemplary semiconductor processing chambers may include a chamber body including sidewalls and a base. The chambers may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate. The substrate support may include a shaft coupled with the support platen. The substrate support may include a shield coupled with the shaft of the substrate support. The shield may include a plurality of apertures defined through the shield. The substrate support may include a block seated in an aperture of the shield. 1. A semiconductor processing system comprising:a chamber body comprising sidewalls and a base; a support platen configured to support a semiconductor substrate, and', 'a shaft coupled with the support platen;, 'a substrate support extending through the base of the chamber body, wherein the substrate support comprisesa shield coupled with the shaft of the substrate support, wherein the shield comprises a plurality of apertures defined through the shield; anda block seated in an aperture of the shield.2. The semiconductor processing system of claim 1 , wherein the shield comprises a ceramic material.3. The semiconductor processing system of claim 1 , wherein the substrate support further comprises a purge channel positioned to deliver a purge gas within a region between the support platen and the shield.4. The semiconductor processing system of claim 1 , wherein each aperture of the plurality of apertures is characterized by a diameter of less than or about 10 mm.5. The semiconductor processing system of claim 4 , wherein the plurality of apertures are sized along a gradient claim 4 , and apertures proximate the shaft are characterized by a larger diameter than apertures distal the shaft.6. The semiconductor processing system of claim 1 , wherein the plurality of apertures are defined within an area confined by a radial distance of 80% or less of a radius of ...

PLASMA GENERATING DEVICE, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

There is provided a plasma generating device that includes a first electrode connected to a high-frequency power supply, and a second electrode to be grounded, a buffer structure configured to form a buffer chamber that accommodates the first and second electrodes wherein the first electrode and the second electrode are alternately arranged such that a number of electrodes of the first electrode and the second electrode are in an odd number of three or more in total, and wherein the second electrode is used in common for two of the first electrode being respectively adjacent to the second electrode used in common, and wherein a gas supply port that supplies gas into a process chamber is installed on a wall surface of the buffer structure. 1. A plasma generating device , comprising:one or more first electrodes connected to a high-frequency power supply;one or more second electrodes that are grounded; anda buffer structure configured to form a buffer chamber that accommodates the one or more first electrodes and the one or more second electrodes,wherein the one or more first electrodes and the one or more second electrodes are alternately arranged such that a total number of the one or more first electrodes and the one or more second electrodes are in an odd number of three or more,wherein an electrode among one of the one or more first electrodes and the one or more second electrodes is used in common for two adjacent electrodes among the other one of the one or more first electrodes and the one or more second electrodes, andwherein a gas supply port that supplies gas into a process chamber is installed on a wall surface of the buffer structure.2. The plasma generating device of claim 1 , wherein the gas supply port is located between one of the first electrodes and one of the second electrodes claim 1 , and the wall surface of the buffer structure faces a side surface of a substrate.3. The plasma generating device of claim 1 , wherein the gas supply port is opened ...

Substrate support with thermal zones for semiconductor processing

A substrate support in a semiconductor plasma processing apparatus, comprises multiple independently controllable thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the thermal zones. A substrate support in which the substrate support is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the substrate support include bonding together ceramic or polymer sheets having thermal zones, power supply lines, power return lines and vias.

PLASMA REACTOR AND METHOD OF OPERATING THE SAME

Plasma-supported, chemical vacuum-coating installation

A plasma chamber (4) is arranged, coaxially to a vacuum pump connection (2, 3), in a vacuum container (1). This plasma chamber has a screen (5) which forms an envelope surface and into which an end wall (6, 7) can be moved from the direction of the two end faces, which end wall has a central process-gas inlet (8, 9). Between the end walls (6, 7), there is arranged a substrate holder (12) which simultaneously forms an electrode (10). ...

다이아몬드를 제조하고 실시간 현장 분석을 실시하는 장치 및 방법

... 다이아몬드를 제조하고 실시간 현장 분석을 실행하는 장치로서, 하우징, 상기 하우징에 구조적으로 연결되고, 상기 다이아몬드의 성장을 수용하도록 적합된 폐쇄된 영역을 포함하는 반응 체임버, 상기 하우징 내의 상기 반응 체임버의 상측에 장착되고, 상기 반응 체임버 내에서 다이아몬드의 성장을 유발하기 위해 상기 반응 체임버 내로 마이크로파를 방출하도록 적합되는 방사 수단, 상기 환형 하우징 내에서 상기 반응 체임버 상측에 장착되는 기록 수단, 상기 반응 체임버의 상부 상에 제공되고, 상기 방사 수단 및 기록 수단의 양자 모두와 상기 폐쇄된 영역 사이에 배치되고, 상기 방사 수단으로부터의 방사파가 상기 반응 체임버 내로 진입하는 것을 허용하도록 적합되고, 그리고 또한 상기 기록 수단이 상기 반응 체임버 내의 상기 다이아몬드의 성장을 기록하도록 허용하는 유전체 커버를 포함한다.

SYMMETRIC PLASMA PROCESS CHAMBER

Embodiments of the present invention provide a plasma chamber design which allows extremely symmetrical electrical, thermal, and gas flow conductivity through a chamber. By providing this symmetry, plasma formed in the chamber naturally has improved uniformity across the surface of the substrate disposed in the processing region of the chamber. Furthermore, other functions of chambers, such as providing the ability to manipulate a gap between a gas inlet and a substrate to be processed as well as a gap between the upper and lower electrodes, allow better control of plasma processing and uniformity compared to conventional systems. A plasma processing device includes a chamber body and a cover assembly; and a substrate support assembly. COPYRIGHT KIPO 2017 ...

ELECTRON CYCLOTRON RESONANCE PLASMA SOURCE AND METHOD OF OPERATION

A method and apparatus are disclosed employing electron cyclotron resonant (ECR) heating to produce plasma for applications including but not limited to chemical vapor deposition and etching. A magnetic field is formed by magnets (20) circumferentially arranged about a cylindrical and symmetrical chamber (12) with microwave power (44) injected perpendicularly to a longitudinal axis (14) of the chamber (12) for preventing line-of-sight communication of resulting energetic electron through an outlet (50) at one axial end of the chamber (12). The circumferential magnets (20) cause precessing of the electrons resulting in greatly increased plasma density and ion flux or current density even at low pressures which are preferably maintained for establishing unidirectionality or anisotropic plasma characteristics. A magnetic field free region (60) is formed between the plasma forming region (44) and the circumferential magnets (20) in order to also produce uniformity of plasma distribution in ...

Sputtering apparatus

A sputtering apparatus includes a vacuum chamber, a substrate holder, a target support member, a cathode magnet arranged on a side of the target support member, which is opposite to a side of a substrate held by the substrate holder, a magnet moving unit configured to adjust a distance between the cathode magnet and the target support member, a target moving unit configured to adjust a distance between the target support member and the substrate, and a control unit configured to control the target moving unit and the magnet moving unit.

SUBSTRATE PROCESSING DEVICE

A substrate processing device with improved exhaust efficiency and process reproducibility includes: a plurality of reactors; a plurality of exhaust ports in communication with the plurality of reactors and symmetrically arranged with respect to the reactors, respectively; and a plurality of exhaust channels in communication with the plurality of exhaust ports, wherein each exhaust channel includes a plurality of exhaust channels including a first channel extending in the first direction and a second channel extending in a second direction different from the first direction, wherein the plurality of exhaust channels extend through components supporting at least a portion of the plurality of reactors.

ИСТОЧНИК ПЛАЗМЫ

Substrate processing apparatus and manufacturing method of semiconductor device

APPARATUS AND METHOD OF PRODUCING DIAMOND

METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT

A plasma deposition apparatus includes a waveguide conduit having a plurality of slots therein. The waveguide conduit is coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of slots. One or more pipes have an outlet end positioned at each of the plurality of slots for transporting material from one or more material sources to the plurality of slots. The apparatus also includes a plasma chamber in communication with the waveguide tube through the plurality of slots. The plasma chamber receives through said plurality of slots microwaves from the waveguide tube and material to be melted or evaporated from the one or more pipes. The plasma chamber includes a plurality of magnets disposed in an outer wall of the plasma chamber for forming a magnetic field in the plasma chamber. The plasma chamber further includes one or more outlet openings for discharging plasma containing material to be deposited on a substrate.

Balancing RF circuit and control for a cross-coupled SIMO distribution network

A single input multiple output plasma control system includes a splitter that receives a single input and generates multiple outputs. Each output from the splitter is provided to a load. The splitter includes branch circuits connected between selected splitter outputs. The branch circuits control voltage, current, power, frequency, or phase between each branch to enable controlling a predetermined relationship between the voltage, current, power, impedance, frequency, or phase measured at each load.

Deposition radial and edge profile tunability through independent control of TEOS flow

In one embodiment, at least a processing chamber includes a perforated lid, a gas blocker disposed on the perforated lid, and a substrate support disposed below the perforated lid. The gas blocker includes a gas manifold, a central gas channel formed in the gas manifold, a first gas distribution plate comprising an inner and outer trenches surrounding the central gas channel, a first and second gas channels formed in the gas manifold, the first gas channel is in fluid communication with a first gas source and the inner trench, and the second gas channel is in fluid communication with the first gas source and the outer trench, a second gas distribution plate, a third gas distribution plate disposed below the second gas distribution plate, and a plurality of pass-through channels disposed between the second gas distribution plate and the third gas distribution plate. The second gas distribution plate includes a plurality of through holes formed through a bottom of the second gas distribution ...

Plasma reactor for integrated circuit fabrication

The plasma reactor includes a wafer holder (14) which is connected to a reference potential. The plasma reactor further includes pump connecting pieces (12) and gas supplies (13). A plasma excitation apparatus (15) excites the plasma by coupling in electrical energy. The plasma excitation apparatus includes at least two apparatus parts (151,52) which can be independently driven. The plasma is differently excited at least two different sites above the wafer holder by the parts of the plasma excitation apparatus.

Verfahren und Vorrichtung zum Ausbilden einer Schicht auf einem Halbleitersubstrat sowie Halbleitersubstrat

Verfahren zum Ausbilden einer Schicht auf Halbleitersubstraten in einer Prozesskammer, wobei das Verfahren die folgenden Schritte aufweist:a. Einleiten eines ersten Prekursorgases in die Prozesskammer und ggf. Erzeugen eines Plasmas aus dem ersten Prekursorgas, um eine Abscheidung einer Komponente des Prekursors auf der Oberfläche des Substrats zu erzeugen;b. Spülen der Prozesskammer um das erste Prekursorgas aus der Prozesskammer zu Entfernen;c. Einleiten eines zweiten Prekursorgases in die Prozesskammer bei einer vorbestimmten Temperatur um eine Reaktion mit der im Schritt a. abgeschiedenen Komponenten zu bewirken und dadurch eine Abscheidung auf der Oberfläche des Substrats zu erzeugen, wobei die Abscheidungen jeweils selbstbegrenzend sind und eine Atomlage der abgeschiedenen Komponente erzeugen.d. Spülen der Prozesskammer um das zweite Prekursorgas aus der Prozesskammer zu Entfernen;e. Wiederholen des Zyklus der Schritte a. bis d., bis eine Vorbestimmte Schichtdicke erreicht ist;f.

DURCH ELEKTRONENZYLOTRON HERVORGEBRACHTE RESONANZPLASMAQUELLE UND ARBEITSWEISE

A microwave plasma reactor for manufacturing synthetic diamond material

Method of depositing silicon nitride

Tunable multi-zone gas injection system

Anode shield

A sputter system and an anode and anode shield assembly that provide for improved grounding for extended sputter cycles.

PLASMA SOURCE

Source de plasma (1) destinée au dépôt d'un revêtement sur un substrat (9) et apte à être reliée à une source d'énergie (P) comprenant une électrode (2), un ensemble magnétique (4) situé en périphérie de ladite électrode et comprenant un ensemble d'aimants reliés entre eux par un support magnétique (46) comprenant un premier et un deuxième aimant central (43, 44) et au moins un aimant de tête (45) et une enceinte électriquement isolante (5) agencée de sorte à entourer l'électrode et les aimants.

Remote modular high frequency source

A nano-coating equipment planetary rotary shelf device

PLASMA ETCHING APPARATUS

플라즈마 소스

... 본 발명은 기재(9)에 코팅을 증착하고 전원(P)에 접속될 수 있는 플라즈마 소스(1)에 관한 것이고, 상기 플라즈마 소스(1)는 전극(2); 상기 전극의 주변에 위치되어 있고, 자기 브래킷(46)에 의해 함께 상호 연결된 자석의 세트를 포함하고 제1 및 제2 중앙 자석(43, 44) 및 적어도 하나의 헤드 자석(45)을 포함하는 자석 어셈블리(4); 및 상기 전극 및 상기 자석을 둘러싸도록 배치된 전기 절연 엔클로저(5)를 포함하고 있다.

합성 다이아몬드 물질을 제조하기 위한 극초단파 플라즈마 반응기

... 화학적 증착을 통해 합성 다이아몬드 물질을 제조하기 위한 극초단파 플라즈마 반응기로서, 상기 극초단파 플라즈마 반응기는 제 1 극초단파 공명 모드 주파수(f)를 갖는 제 1 극초단파 공명 모드를 뒷받침하기 위한 공명 강(cavity)을 한정하는 플라즈마 챔버; 총 극초단파 동력(PT)을 갖는 극초단파를 발생시키고 상기 플라즈마 챔버 내로 공급하기 위한, 상기 플라즈마 챔버에 연결된 복수개의 극초단파 공급원; 공정 기체를 상기 플라즈마 챔버 내로 공급하고 이 기체를 상기 플라즈마 챔버로부터 제거하기 위한 기체 유동 시스템; 및 사용시 합성 다이아몬드 물질이 침착되어야 하는 기재를 지지하기 위한 지지 표면을 포함하고 상기 플라즈마 챔버 내에 배치되는 기재 홀더 를 포함하고, 이 때 상기 복수개의 극초단파 공급원이 상기 총 극초단파 동력(PT)의 30% 이상을 상기 제 1 극초단파 공명 모드 주파수(f)로 상기 플라즈마 챔버에 연결하도록 구성되고, 상기 복수개의 극초단파 공급원중 적어도 일부가 고상(solid state) 극초단파 공급원인, 극초단파 플라즈마 반응기.

Gas supply apparatus

This invention provides a gas supply apparatus which can supply a gas in a supersonic speed to a substrate to be processed. An ejector (1) of the gas supply apparatus of this invention comprises a nozzle portion (10). A first-segment restriction cylinder (13) which constitutes the nozzle portion (10) comprises an opening portion, where the cross-sectional shape thereof is a circle having a diameter of r1. A second-segment restriction cylinder (14) is formed continuously with the first-segment restriction cylinder (13) along the Z direction, where the cross-sectional shape of the opening portion thereof is a circle having a diameter of r2, and supplies a raw material gas from the first-segment restriction cylinder (13) to a low vacuum processing chamber (18) below. The diameter r2 is set to satisfy the condition "r2 > r1".

PLASMA UNIFORMITY CONTROL BY GAS DIFFUSER HOLE DESIGN

Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties. 1. A gas distribution plate assembly for a plasma processing chamber , comprising:a diffuser plate element having an edge, a center, a concave upstream side and a downstream side; and an orifice hole having a first diameter; and', 'a hollow cathode cavity that is downstream of the orifice hole and is at the downstream side, the hollow cathode cavity having a cone or cylinder shape and a second diameter at the downstream side that is greater than the first diameter, the second diameters or the depths or a combination of both of the cones or cylinders increases from the center to ...

TARGET AGE COMPENSATION METHOD FOR PERFORMING STABLE REACTIVE SPUTTERING PROCESSES

A method for performing reactive sputtering processes while maintaining the sputtering characteristic at: the target as well as the deposition rate constant, or at least in an acceptable range for the industrial production context, independent of the target age. 1. A method for performing a coating process involving sputtering techniques comprising:{'sub': reactive', '_', 'gas', 'target, 'sputtering at least one target in an atmosphere comprising at least one reactive gas and maintaining sputtering characteristic values and/or coating rate within predefined target values as constant as possible, wherein a deviation of the sputtering characteristic values and/or of the coating rate values from the target values is maintained within an acceptable deviation range for an industrial production context by adjusting a reactive gas partial pressure pdepending on the a target weight w.'}2. The method according to claim 1 , comprising operating the target as a cathode by supplying power in such a manner that a power density at the target is maintained constant during sputtering of the target.3. The method according to claim 1 , comprising adjusting the reactive gas partial pressure pdepending claim 1 , on the target weight waccording to a correlation pvs. wpreviously determined under corresponding coating conditions.4. The method according to claim 3 , comprising determining the correlation pvs. wbefore performing the coating process by using a method comprising at least following steps:{'claim-ref': {'@idref': 'CLM-00003', 'claim 3'}, 'a) Providing a coating apparatus and further necessary elements as well as at least one in-new-condition target, of the same type required for accomplishing a coating process in compliance with the coating process referred to in ;'}{'sub': target', '_', 'i', '_', 'initial, 'b) Measuring the target weight before accomplishing a coating process i for obtaining W;'}{'sub': i', 'reactive', '_', 'gas', '_', 'i', 'reactive', '_', 'gas', '_', 'i', 'i ...

METHOD FOR MANUFACTURING SPUTTERING TARGET, METHOD FOR FORMING OXIDE FILM, AND TRANSISTOR

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

Interchangeable magnet pack

An apparatus includes a target, wherein the target includes a nonuniform erosion profile. The apparatus also includes a number of interchangeable magnetic and non-magnetic inserts. The interchangeable magnetic and non-magnetic inserts are configured to control a pass through flux based on the nonuniform erosion profile.

METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT

This application is directed to an apparatus for creating microwave radiation patterns for an object detection system. The apparatus includes a waveguide conduit having first slots at one side of the conduit and corresponding second slots at an opposite side of the conduit. The waveguide conduit is coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of first slots. A plunger is moveably positioned in the waveguide conduit from one end thereof. The plunger allows the waveguide conduit to be tuned to generally optimize the power of the microwaves exiting the first slots. Secondary plungers are each fitted in one of the second slots to independently tune or detune microwave emittance through a corresponding first slot.

Plasma processing apparatus

The present invention relates to an apparatus (10) for plasma processing an article(12), the apparatus comprisingra chamber(14) for receiving an article to be processed; electrode means (16) for generating an electricand/or magneticfield in said chamberwhen energised by alternating electrical energyfor establishing a plasma in said chamber so that said article can be processed; andvarying frequency generatingmeans (20) for generating alternating electrical energy for transmission tothe electrode means, said alternating electrical energy being generated at a plurality of different frequencies in succession, one frequency after another frequency, thereby producing a succession of standing waves in said chamber of a plurality of different wavelengths.

Heating plate with planar heater zones for semiconductor processing and manufacturing methods thereof

Contoured showerhead for improved plasma shaping and control

VACUUM COATING UNIT FOR HOMOGENEOUS PVD COATING

The apparatus (1) comprises a coating chamber (2), two or more cathodes (3), which are arranged peripherally within the coating chamber, substrate carriers (6) for holding the substrate (4), vacuum pumps (8) and voltage sources (15, 16, 17, 18, 19) wherein an individual anode (5) is arranged centrally between the cathodes (3) in the coating chamber (2) and the substrate (4) is positioned between the anode (5) and the cathode (3). In each case a gas discharge with a plasma (14) is ignited between the individual anode (5) and the cathodes (3). The substrates (4) are held fixed in position or are rotated about one or more axes and in the process subjected to the plasma (14).

INTERCHANGEABLE MAGNET PACK

An apparatus includes a target, wherein the target includes a nonuniform erosion profile. The apparatus also includes a number of interchangeable magnetic and non-magnetic inserts. The interchangeable magnetic and non-magnetic inserts are configured to control a pass through flux based on the nonuniform erosion profile.

Plasma processing apparatus and cover assembly

PLASMA GENERATING DEVICE, SUBSTRATE PROCESSING DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PLASMA UNIFORMITY CONTROL BY GAS DIFFUSER HOLE DESIGN

Method for coating a substrate and coater

Targeted heat control systems

Exemplary semiconductor processing chambers may include a chamber body including sidewalls and a base. The chambers may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate. The substrate support may include a shaft coupled with the support platen. The substrate support may include a shield coupled with the shaft of the substrate support. The shield may include a plurality of apertures defined through the shield. The substrate support may include a block seated in an aperture of the shield.

Heating plate with planar heater zones for semiconductor processing

An exemplary method for manufacturing a heating plate for a substrate support assembly includes forming holes in at least one sheet, printing a slurry of conductor powder, or pressing a precut metal foil, or spraying a slurry of conductor powder, on the at least one sheet to form the planar heater zones, the power supply lines, and power return lines. The holes in the at least one sheet are filled with a slurry of conductor powder to form power supply and power return vias. The sheets are then aligned, pressed, and bonded to form the heating plate.

Heating plate with planar heater zones for semiconductor processing

A heating plate of a semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a first layer with an array of heater zones operable to tune a spatial temperature profile on the semiconductor substrate, and a second layer with one or more primary heaters to provide mean temperature control of the semiconductor substrate. The heating plate can be incorporated in a substrate support wherein a switching device independently supplies power to each one of the heater zones to provide time-averaged power to each of the heater zones by time divisional multiplexing of the switches.

SPUTTER DEVICES AND METHODS

Sputter devices comprise a vacuum supply, a gas supply, a substrate holding device, and sputter sources. Each sputter source is held by an individual source support, each of which has an individual reference point allocated on a sputter surface facing the deposition area, and each of which has a source distance to a source reference surface from the individual reference point. The sputter sources are spaced apart from each other, are arranged as a two-dimensional array opposite the deposition area, and extend along the source reference surface. The source reference surface is parallel to the substrate reference surface. At least one of the sputter sources has a source distance deviating from zero. 1. A sputter device for sputtering deposition of a layer on a three-dimensionally shaped substrate surface of a substrate in a deposition area , the sputter device comprising in a deposition section of the sputter device:at least one vacuum supply for generation of a vacuum in the deposition section;a gas supply for introduction of process gas for the sputtering deposition in the deposition section;a substrate holding device for support of the substrate relative to a substrate reference surface of the substrate holding device; andsputter sources, each of which is held by an individual source support, each of which has an individual reference point allocated on a sputter surface facing the deposition area, and each of which has a source distance to a source reference surface from the individual reference point, wherein the sputter sources are spaced apart from each other, are arranged as a two-dimensional array opposite the deposition area, and extend along the source reference surface, wherein the source reference surface is parallel to the substrate reference surface, wherein at least one of the sputter sources has a source distance deviating from zero, and wherein the source distance is measured between the source reference surface and the individual reference point of ...

PEVCD DEVICE AND METHOD USING PECVD TECHNOLOGY ON SUBSTRATE

A plasma enhanced chemical vapor deposition (PECVD) device includes a deposition box, a first electrode, and a second electrode, where the first electrode and the second electrode are arranged in the deposition box. A process chamber is arranged in the deposition box, a gas line and a pump port are respectively arranged along a first side wall and a second side wall of the deposition box, and a valve is arranged along a third side wall of the deposition box. The first electrode is arranged in an inside of the process chamber, and is connected to a radio frequency (RF) power source. A first end of the first electrode corresponds to the valve and is adjacent to the pump port. The PECVD device further includes an electrode regulating device, the electrode regulating device adjusts an angle between the first electrode and the second electrode to make a plasma airflow between the first electrode and the second electrode be even, which reduces a thickness difference of a film in different areas due to the airflow deflecting to a valve. 1. A plasma enhanced chemical vapor deposition (PECVD) device , comprising:{'b': '100', 'a deposition box ();'}{'b': 140', '130, 'a first electrode () connecting to a power source ();'}{'b': 170', '140, 'a second electrode () opposite to the first electrode (); and'}an electrode regulating device;{'b': 110', '100', '120', '160', '101', '102', '100', '150', '103', '100', '160', '102', '103', '140', '150', '160', '190', '140', '170', '140', '170, 'wherein a process chamber () is arranged in the deposition box (), a gas line () and a pump port () are arranged along a first side wall () and a second side wall () of the deposition box (), respectfully, and a valve () is arranged along a third side wall () of the deposition box (); the pump port () is arranged along a side of the second side wall () adjacent to the third side wall (); a first end of the first electrode () corresponds to the valve () and is adjacent to the pump port (); the ...

PLASMA SOURCE

The invention relates to a plasma source () for depositing a coating onto a substrate (), which is connectable to a power source (P) and includes: an electrode (); a magnetic assembly () located circumferentially relative to said electrode and including a set of magnets mutually connected by a magnetic bracket () including a first and second central magnet () and at least one head magnet (); and an electrically insulating enclosure () arranged such as to surround the electrode and the magnets. 119. A plasma source () intended for the depositing of a coating on a substrate () and able to be connected to a power source (P) , comprising:{'b': 2', '3', '6', '21', '22', '23', '24', '26', '27', '28, 'a) an electrode () delimiting a discharge cavity () leading onto an aperture () opposite which the said substrate can be positioned, the cross-section of the said electrode comprising a first and a second side wall (, ) positioned either side of a bottom part (, ) provided with a central portion protruding into the said discharge cavity, the said central portion comprising a first and a second central wall (, ) and a top part () joining together the two central walls;'}{'b': 4', '46, 'claim-text': [{'b': 41', '42', '21', '22', '6, 'i) at least a first and a second side magnet (, ), the said first side magnet, respectively second side magnet, being arranged behind the said first side wall () and second side wall () respectively, in the vicinity of the said aperture (), the said side magnets being oriented such that their exposed poles have the same polarity;'}, {'b': 43', '44', '26', '27, 'ii) at least a first and a second central magnet (, ), the said first central magnet, and second central magnet respectively, being arranged behind the said first central wall () and second central wall () respectively, the said two central magnets being oriented such that their exposed pole is of opposite polarity to that of the exposed poles of the side magnets;'}, {'b': 45', '28, 'iii) at ...

METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT

An apparatus for separating ions having different mass or charge includes a waveguide conduit coupled to a microwave source for transmitting microwaves through openings in the waveguide conduit. The outlet ends of pipes are positioned at the openings for transporting material from a material source to the openings. A plasma chamber is in communication with the waveguide tube through the openings. The plasma chamber receives through the openings microwaves from the waveguide tube and material from the pipes. The plasma chamber includes magnets disposed in an outer wall thereof for forming a magnetic field in the plasma chamber. The plasma chamber includes a charged cover at a side of the chamber opposite the side containing the openings. The cover includes extraction holes through which ion beams from the plasma chamber are extracted. Deflectors coupled to one of the extraction holes receive the ion beams extracted from the plasma chamber. Each deflector bends an ion beam and provides separate passages for capturing ions following different trajectories from the bending of the ion beam based on their respective mass or charge. 1. An apparatus for separating ions having different mass or charge , comprising:a waveguide conduit having a plurality of openings therein, said waveguide conduit being coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of openings;one or more pipes having an outlet end positioned at each of the plurality of openings for transporting material from a material source to the plurality of openings;a plasma chamber in communication with the waveguide tube through the plurality of openings, said plasma chamber receiving through said plurality of openings microwaves from the waveguide tube and material from the one or more pipes, said plasma chamber including a plurality of magnets disposed in an outer wall of the plasma chamber for forming a magnetic field in the plasma chamber, said plasma ...

PLASMA UNIFORMITY CONTROL BY GAS DIFFUSER HOLE DESIGN

Embodiments of a method of depositing a thin film on a substrate is provided that includes placing a substrate on a substrate support that is mounted in a processing region of a processing chamber, flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side, and creating a plasma between the downstream side of the diffuser plate and the substrate support. 1. A method of depositing a thin film on a substrate , comprising:placing a substrate on a substrate support that is mounted in a processing region of a processing chamber;flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side; andcreating a plasma between the downstream side of the diffuser plate and the substrate support.2. The method of claim 1 , wherein each of the gas passages comprise a hollow cathode cavity in fluid communication with the downstream side.3. The method of claim 2 , wherein a volume claim 2 , a surface area claim 2 , or a density of each of the gas passages varies across the diffuser plate to obtain a desired thin film thickness and property uniformity.4. The method of claim 1 , wherein the diffuser plate is rectangular.5. The method of claim 1 , wherein the diffuser plate size is at least 1 claim 1 ,200 claim 1 ,000 mm.6. The method of claim 1 , wherein each of the gas passages comprise:an orifice hole having a first diameter; anda hollow cathode cavity that is downstream of and in fluid ...

Methods and systems for plasma deposition and treatment

This application is directed to an apparatus for creating microwave radiation patterns for an object detection system. The apparatus includes a waveguide conduit having first slots at one side of the conduit and corresponding second slots at an opposite side of the conduit. The waveguide conduit is coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of first slots. A plunger is moveably positioned in the waveguide conduit from one end thereof. The plunger allows the waveguide conduit to be tuned to generally optimize the power of the microwaves exiting the first slots. Secondary plungers are each fitted in one of the second slots to independently tune or detune microwave emittance through a corresponding first slot.

Sputtering device

The purpose of the present invention is to improve uniformity of film deposition by a plasma-based sputtering device. Provided is a sputtering device 100 for depositing a film on a substrate W through sputtering of targets T by using plasma P, said sputtering device being provided with a vacuum chamber 2 which can be evacuated to a vacuum and into which a gas is to be introduced; a substrate holding part 3 for holding the substrate W inside the vacuum chamber 2 ; target holding parts 4 for holding the targets T inside the vacuum chamber 2 ; multiple antennas 5 which are arranged along a surface of the substrate W held by the substrate holding part 3 and generate plasma P; and a reciprocal scanning mechanism 14 for scanning back and forth the substrate holding part 3 along the arrangement direction X of the multiple antennas 5.

METHOD FOR A DIAMOND VAPOR DEPOSITION

The present invention relates to a method for depositing nanocrystalline diamond using a diamond vapor deposition facility which includes: a vacuum reactor including a reaction chamber connected to a vacuum source; a plurality of plasma sources arranged along a matrix that is at least two-dimensional in the reaction chamber; and a substrate holder arranged in the reactor, said method being characterized in that the deposition is carried out at a temperature of 100 to 500° C. 1. A nanocrystalline diamond deposition method implementing a piece of chemical vapor diamond deposition equipment comprisinga vacuum reactor comprising a reaction chamber connected to a vacuum source,a plurality of plasma sources, positioned according to an at least two-dimensional matrix in the reaction chamber, anda substrate-holder positioned in the reactor, said method comprising:carrying out said deposition at a temperature comprised between 100 and 500° C. and at a pressure comprised between 0.1 and 1 mbar.2. (canceled)3. The deposition method according to claim 1 , which is achieved on a substrate having a three-dimensional surface.4. The deposition method according to claim 3 , wherein the substrate has raised/recessed elements claim 3 , either recessed or protruding claim 3 , on a surface defining a reference plane.5. The deposition method according to claim 3 , wherein the substrate has a concave or convex surface.6. The method according to claim 4 , wherein the substrate is selected from the group of materials consisting of silicon and silicon-based compounds claim 4 , diamond claim 4 , refractory metals and derivatives claim 4 , transition metals and derivatives claim 4 , stainless steels claim 4 , titanium-based alloys claim 4 , superalloys claim 4 , cemented carbides claim 4 , polymers claim 4 , ceramics claim 4 , glasses claim 4 , oxides of the molten silica claim 4 , alumina type claim 4 , and semiconductors of columns III-V or II-VI of the Periodic Classification.7. The method ...

TIME VARYING SEGMENTED PRESSURE CONTROL

An apparatus for processing a substrate is provided. A processing chamber is provided. A substrate support for supporting the substrate is within the processing chamber. A gas inlet provides gas into the processing chamber. An exhaust pressure system exhausts gas around a periphery of the substrate, wherein the periphery around the substrate is divided into at least three parts, wherein the exhaust pressure system controls exhaust pressure to control a velocity of the gas over the substrate, wherein the exhaust pressure system provides at independent exhaust pressure control for each part of the periphery for the at least three parts. 1. An apparatus for processing a substrate , comprisinga processing chamber;a substrate support for supporting the substrate within the processing chamber;a gas inlet for providing gas into the processing chamber;an exhaust pressure system, which exhausts gas around a periphery of the substrate, wherein the periphery around the substrate is divided into at least three parts, wherein the exhaust pressure system controls exhaust pressure to control a velocity of the gas over the substrate, wherein the exhaust pressure system provides an independent exhaust pressure control for each part of the periphery for the at least three parts; andan exhaust pressure controller for azimuthally, cyclically, and sequentially changing the pressure for each part.2. (canceled)3. The apparatus claim 1 , as recited in claim 1 , further comprising:pressure sensors connected to the processing chamber; anda feedback loop connected to the pressure sensors and the exhaust pressure controller, for providing feedback to the pressure controller.4. The apparatus as recited in claim 3 , wherein the pressure sensors are manometers.5. The apparatus claim 4 , as recited in claim 4 , wherein the exhaust pressure system comprises:a plurality of exhaust ports spaced around the periphery of the substrate;a segmented pressure ring formed by at least three segments, wherein ...

HELMHOLTZ COIL ASSISTED PECVD CARBON SOURCE

The embodiments disclose an apparatus including at least two carbon source deposition tools for emitting electrons, at least two reflective polarity rear button permanent magnets integrated into the carbon source deposition tools for reflecting emitted electrons, and at least two paired polarity Helmholtz coils integrated into the carbon source deposition tools for forming uniform parallel magnetic field lines for confining the emitted electrons to uniformly deposit carbon onto the surfaces of a two-sided media disk. 1. An apparatus , comprising:at least two carbon source deposition tools for emitting electrons; andat least two paired polarity Helmholtz coils integrated into the carbon source deposition tools configured to form uniform parallel magnetic field lines for confining the emitted electrons to uniformly deposit carbon onto the surfaces of a two-sided media disk.2. The apparatus of claim 1 , further comprising a first paired polarity Helmholtz coil integrated into a first carbon source deposition tool.3. The apparatus of claim 1 , further comprising a second paired polarity Helmholtz coil integrated into a second carbon source deposition tool.4. The apparatus of claim 1 , further comprising a first electric current configured to connect to a first paired polarity Helmholtz coil and configured to form a first paired polarity Helmholtz coil current flow direction.5. The apparatus of claim 1 , further comprising a second electric current configured to connect to a second paired polarity Helmholtz coil and configured to form a second paired polarity Helmholtz coil current flow direction.6. The apparatus of claim 1 , further comprising a first and second paired polarity Helmholtz coil integrated into a first and second carbon source deposition tool configured to produce first and second uniform parallel magnetic field lines to confine and concentrate first and second emitted electrons into a deposition chamber.7. The apparatus of claim 1 , further comprising a ...

PLASMA DEVICE

A plasma device is proposed, the plasma device including: a chamber configured to accommodate a processed article; a plasma source configured to generate a plasma applied to the processed article accommodated in the chamber; a chuck unit configured to support the processed article accommodated in the chamber; and a cooling channel formed inside the chamber to allow flowing cooling water. 1. A plasma device , the plasma device comprising:a chamber configured to accommodate a processed article;a plasma source configured to generate a plasma applied to the processed article accommodated in the chamber;a chuck unit configured to support the processed article accommodated in the chamber; anda cooling channel formed inside the chamber to allow flowing cooling water.2. The plasma device of claim 1 , wherein the chuck unit includes a guide plate arranged at an inner side of the cooling channel claim 1 , wherein the cooling water is introduced into the cooling channel to flow to a radial direction of the guide plate along a first surface of the guide plate claim 1 , and changed in direction at a periphery of the guide plate to flow a central direction of the guide plate along a second surface of the guide plate.3. The plasma device of claim 1 , wherein a temperature of a first position at the processed article grows higher than that of a second position by plasma processing claim 1 , an inlet of the cooling channel is provided at the first position when viewed from a plan claim 1 , and a guide unit is provided at the cooling channel to allow the cooling water introduced through the inlet to flow toward the second position when viewed from a plan.4. The plasma device of claim 1 , wherein the cooling channel includes an inlet formed at the first position to allow the cooling water to flow claim 1 , and a plurality of radially extended guide units about the inlet claim 1 , wherein the cooling water introduced into the inlet is flown to a radial direction by the guide unit.5. ...

SPUTTERING APPARATUS

A sputtering apparatus includes a vacuum chamber, a substrate holder, a target support member, a cathode magnet arranged on a side of the target support member, which is opposite to a side of a substrate held by the substrate holder, a magnet moving unit configured to adjust a distance between the cathode magnet and the target support member, a target moving unit configured to adjust a distance between the target support member and the substrate, and a control unit configured to control the target moving unit and the magnet moving unit. 1. A sputtering apparatus comprising:a vacuum chamber;a substrate holder configured to arrange a substrate at a predetermined position in the vacuum chamber;a target support member configured to arrange a target so as to make the target face the substrate arranged by the substrate holder;a cathode magnet arranged on a side of the target support member, which is opposite to a side of the substrate;a magnet moving unit configured to adjust a distance between the cathode magnet and the target support member;a target moving unit configured to adjust a distance between the target support member and the substrate; anda control unit configured to control the target moving unit and the magnet moving unit.2. The sputtering apparatus according to claim 1 , wherein the control unit adjusts a distance between the cathode magnet and the target support member in accordance with a change in power value applied to the target support member.3. The apparatus according to claim 1 , wherein the control unit adjusts a distance between the target support member and the substrate in accordance with integrated power applied to the target support member.4. The sputtering apparatus according to claim 1 , the control unit adjusts a distance between the target support member and the substrate in accordance with a distance between the cathode magnet and the target support member.5. The sputtering apparatus according to claim 1 , further comprising a magnet ...

A microwave plasma reactor for manufacturing synthetic diamond material

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber defining a resonant cavity for supporting a primary microwave resonance mode having a primary microwave resonance mode frequency f; a plurality of microwave sources coupled to the plasma chamber for generating and feeding microwaves having a total microwave power Pτ into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use, wherein the plurality of microwave sources are configured to couple at least 30% of the total microwave power Pτ into the plasma chamber in the primary microwave resonance mode frequency f, and wherein at least some of the plurality of microwave sources are solid state microwave sources.

FILM FORMING APPARATUS AND GAS INJECTION MEMBER USED THEREFOR

A film forming apparatus, for forming a film on a target substrate using a processing gas excited by plasma, includes: a processing chamber for accommodating the substrate; a mounting table for mounting thereon the substrate in the processing chamber; a gas injection member provided to face the substrate mounted on the mounting table and configured to inject the processing gas toward the target substrate on the mounting table; and a plasma generation unit for exciting the processing gas by generating plasma between the gas injection member and the mounting table. The gas injection member has a gas injection surface facing the mounting table. Gas injection holes are formed in the gas injection surface. A gas injection hole forming region, on the gas injection surface, where the gas injection holes are formed is smaller than a region on the gas injection surface which corresponds to the target substrate. 1. A film forming apparatus for forming a film on a target substrate using a processing gas excited by plasma , the apparatus comprising:a processing chamber configured to accommodate the target substrate;a mounting table configured to mount thereon the target substrate in the processing chamber;a gas injection member provided to face the target substrate mounted on the mounting table and configured to inject the processing gas toward the target substrate on the mounting table; anda plasma generation unit configured to excite the processing gas by generating plasma between the gas injection member and the mounting table,wherein the gas injection member has a gas injection surface facing the mounting table,wherein a plurality of gas injection holes is formed in the gas injection surface, andwherein a gas injection hole forming region, on the gas injection surface, where the gas injection holes are formed is smaller than a region on the gas injection surface which corresponds to the target substrate.2. The film forming apparatus of claim 1 , wherein the gas injection ...

STRAP FOR PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING APPARATUS HAVING THE SAME

A strap for a plasma processing apparatus includes a main body, and a protrusion pattern defined in the main body. The main body may include a binding part defined at opposing ends thereof. The protrusion pattern may include a protrusion. 1. A strap for a plasma processing apparatus , comprising:a main body,a binding part defined in the main body at opposing ends thereof; anda protrusion pattern defined in the main body and comprising a protrusion.2. The strap of claim 1 , wherein the main body comprises aluminum.3. The strap of claim 1 , wherein a height of the protrusion is within a range of about 0.5 centimeter to about 3 centimeters.4. The strap of claim 1 , wherein a width of the protrusion along a length of the strap is within a range of about 0.1 centimeter to about 3 centimeters.5. The strap of claim 1 , further comprising:a coating layer on the protrusion pattern and comprising an engineering plastic or an inorganic material.6. The strap of claim 5 , wherein the coating layer comprises a plurality of layers comprising:a first layer on the protrusion pattern and comprising the engineering plastic; anda second layer on the first layer and comprising the inorganic material.7. The strap of claim 5 , wherein the coating layer comprises a plurality of layers comprising:a first layer on the protrusion pattern and comprising the inorganic material; anda second layer on the first layer and comprising the engineering plastic.8. The strap of claim 5 , wherein a cross-sectional thickness of the coating layer is within a range of about 0.1 micrometer to about 200 micrometers.9. The strap of claim 5 , wherein the engineering plastic comprises polyether ether ketone or polyether aryl ketone.10. The strap of claim 5 , wherein the inorganic material comprises AlO claim 5 , ZrOor YO.11. The strap of the claim 1 , wherein the protrusion pattern is defined in an entirety of the main body.12. The strap of the claim 11 , further comprising:a coating layer on an entirety of the ...

PLASMA TREATMENT DEVICE AND STRUCTURE OF REACTION VESSEL FOR PLASMA TREATMENT

The present invention improves the in-plane uniformity of film formation via a plasma treatment. It is provided a plasma treatment device constituted so that process gas introduced between an electrode plate and a shower plate is exhausted toward a counter electrode through a plurality of small holes formed in the shower plate, the plasma treatment device comprising a diffuser plate having a plurality of small holes, the diffuser plate being arranged substantially parallel with the shower plate, wherein the process gas is introduced between the electrode plate and the diffuser plate, passes through the plural small holes of the diffuser plate, reaches the shower plate and flows out from the plural small holes of the shower plate toward the electrode plate, and wherein within the small holes formed in the diffuser plate and the small holes formed in the shower plate, the small holes formed in a plate which exists more downstream along a flowing direction of the process gas are made in smaller diameters and an aperture ratio of each plate is made smaller in a plate which exists more upstream along the flowing direction of the process gas. 1. A plasma treatment device with an electrode plate having a main electrode plate , a diffuser plate and a shower plate , the plasma treatment device being constituted so that process gas introduced between the main electrode plate and the shower plate is exhausted toward a counter electrode through a plurality of first small holes formed in the shower plate ,the plasma treatment device comprising the diffuser plate having a plurality of second small holes, the diffuser plate being arranged substantially parallel with the shower plate,wherein the process gas is introduced between the main electrode plate and the diffuser plate, passes through the second plural small holes of the diffuser plate, reaches the shower plate and flows out from the first plural small holes of the shower plate toward the electrode plate, andwherein within ...

METHODS AND APPARATUS FOR MAINTAINING LOW NON-UNIFORMITY OVER TARGET LIFE

Embodiments of improved methods and apparatus for maintaining low non-uniformity over the course of the life of a target are provided herein. In some embodiments, a method of processing a substrate in a physical vapor deposition chamber includes: disposing a substrate atop a substrate support having a cover ring that surrounds the substrate support such that an upper surface of the substrate is positioned at a first distance above an upper surface of the cover ring; sputtering a source material from a target disposed opposite the substrate support to deposit a film atop the substrate while maintaining the first distance; and lowering the substrate support with respect to the cover ring and sputtering the source material from the target to deposit films atop subsequent substrates over a life of the target. 1. A method of processing a substrate in a physical vapor deposition chamber , comprising:disposing a substrate atop a substrate support having a cover ring that surrounds the substrate support such that an upper surface of the substrate is positioned at a first distance above an upper surface of the cover ring;sputtering a source material from a target disposed opposite the substrate support to deposit a film atop the substrate while maintaining the first distance; andlowering the substrate support with respect to the cover ring and sputtering the source material from the target to deposit films atop subsequent substrates over a life of the target.2. The method of claim 1 , wherein lowering the substrate support further comprises lowering the substrate support with respect to the cover ring while sputtering source material.3. The method of claim 1 , wherein the first distance is about 3 mm above the cover ring.4. The method of claim 1 , wherein a deposition rate of source material proximate a center of the substrate is greater than the deposition rate of source material proximate an edge of the substrate at the first distance.5. The method of claim 4 , wherein the ...

Multi-Station Chamber Having Symmetric Grounding Plate

A multi-station chamber having a symmetric ground plate is disclosed. The multi-station chamber includes four stations, and the four stations are arranged in a square configuration with a rotating mechanism in a center location. A pedestal for supporting a substrate is provided for each of the four stations, each pedestal is disposed in a lower chamber body, and each pedestal includes a carrier ring. The lower chamber body includes outer walls and inner walls to define a space for each of the pedestals of the four chambers. A ground plate is disposed over the inner walls and attached to the outer walls. The ground plate has a center opening and a process opening for each station. The center opening is configured to receive the rotating mechanism at the center location. The process opening has a diameter that is larger than a diameter of the carrier ring at each station, and a symmetric gap is defined between an edge of each process opening defined by the ground plate and an outer edge of a carrier ring. For applied radio frequency power, an RF ground return is provided via the ground plate that symmetrically surrounds each process opening of each station. 1. A multi-station chamber , comprising ,a lower chamber body that includes a plurality of stations arranged around a rotating mechanism, each station includes a pedestal for supporting a substrate and a carrier ring that surrounds the pedestal, the carrier ring of each station is configured to be lifted and moved by the rotating mechanism;the lower chamber body having an inner floor disposed below each pedestal of each of the plurality of stations;the lower chamber body having outer walls that surround a perimeter of each of the plurality of stations, the outer walls having a support step;the lower chamber body having inner walls that laterally separate respective ones of the plurality of stations, wherein the outer walls and the inner walls extend up from the inner floor; anda ground plate disposed over the ...

Gas supply apparatus

A gas ejector of a gas supply apparatus includes a nozzle portion. The opening of a first-stage restricting cylinder constituting the nozzle portion has a circular cross-sectional shape with a diameter r1. A second-stage restricting cylinder is continuously formed with the first-stage restricting cylinder along a Z direction. The opening of the second-stage restricting cylinder has a circular cross-sectional shape with a diameter r2, and supplies a source gas supplied from the first-stage restricting cylinder to a low-vacuum processing chamber below. At this time, the diameter r2 is set to satisfy “r2>r1”.

PLASMA FILM FORMING APPARATUS AND PLASMA FILM FORMING METHOD

A plasma film forming apparatus includes: a vacuum chamber in which a film forming process is performed to a substrate a substrate holder provided so as to be rotatable along a film forming surface of the substrate a rotating shaft connected to the substrate holder and a plasma generation unit configured to generate a plasma and provided such that an irradiation angle of the plasma with respect to the rotating shaft forms an acute angle. The apparatus further includes: a first driving unit configured to move the substrate holder in a vertical direction parallel to the rotating shaft a second driving unit configured to move the substrate holder in a horizontal direction orthogonal to the rotating shaft and a third driving unit configured to rotate the rotating shaft and the substrate holder is moved independently in the vertical direction and the horizontal direction 1. A plasma film forming apparatus for performing a film forming process by irradiating a plasma , the apparatus comprising:a vacuum container in which the film forming process is performed to a substrate;a substrate supporting unit configured to support the substrate in the vacuum container and provided so as to be rotatable along a film forming surface of the substrate;a rotating shaft connected to the substrate supporting unit;a plasma generation unit communicating with the vacuum container, configured to generate the plasma, and provided such that an irradiation angle of the plasma with respect to the rotating shaft forms an acute angle;a first driving unit configured to move the substrate supporting unit in a first direction parallel to the rotating shaft;a second driving unit configured to move the substrate supporting unit in a second direction orthogonal to the rotating shaft; anda third driving unit configured to rotate the rotating shaft,wherein the substrate supporting unit is moved independently in the first direction and the second direction.2. The plasma film forming apparatus according to ...

METHOD OF DEPOSITING SILICON NITRIDE

A method is for depositing silicon nitride by plasma-enhanced chemical vapour deposition (PECVD). The method includes providing a PECVD apparatus including a chamber and a substrate support disposed within the chamber, positioning a substrate on the substrate support, introducing a nitrogen gas (N) precursor into the chamber, applying a high frequency (HF) RF power and a low frequency (LF) RF power to sustain a plasma in the chamber, introducing a silane precursor into the chamber while the HF and LF RF powers are being applied so that the silane precursor forms part of the plasma being sustained, and subsequently removing the LF RF power or reducing the LF RF power by at least 90% while continuing to sustain the plasma so that silicon nitride is deposited onto the substrate by PECVD. 1. A method of depositing silicon nitride by plasma-enhanced chemical vapour deposition (PECVD) , the method comprising the steps of:providing a PECVD apparatus comprising a chamber and a substrate support disposed within the chamber;positioning a substrate on the substrate support;{'sub': '2', 'introducing a nitrogen gas (N) precursor into the chamber;'}applying a high frequency (HF) RF power and a low frequency (LF) RF power to sustain a plasma in the chamber;introducing a silane precursor into the chamber while the HF and LF RF powers are being applied so that the silane precursor forms part of the plasma being sustained; andsubsequently removing the LF RF power or reducing the LF RF power by at least 90% while continuing to sustain the plasma so that silicon nitride is deposited onto the substrate by PECVD.2. The method according to in which the HF and LF RF powers are applied for a period immediately prior to the introduction of the silane precursor claim 1 , wherein the period is sufficient to stabilise the plasma being sustained.3. The method according to in which the period is at least 2 s claim 2 , and preferably at least 3 s.4. The method according to in which the LF RF power ...

SEMICONDUCTOR PROCESSING APPARATUS WITH IMPROVED UNIFORMITY

One or more embodiments described herein generally relate to a semiconductor processing apparatus that utilizes high radio frequency (RF) power to improve uniformity. The semiconductor processing apparatus includes an RF powered primary mesh and an RF powered secondary mesh, which are disposed in a substrate supporting element. The secondary RF mesh is positioned underneath the primary RF mesh. A connection assembly is configured to electrically couple the secondary mesh to the primary mesh. RF current flowing out of the primary mesh is distributed into multiple connection junctions. As such, even at high total RF power/current, a hot spot on the primary mesh is prevented because the RF current is spread to the multiple connection junctions. Accordingly, there is less impact on substrate temperature and film non-uniformity, allowing much higher RF power to be used without causing a local hot spot on the substrate being processed. 1. A semiconductor processing apparatus , comprising:a thermally conductive substrate support comprising a primary mesh and a secondary mesh;a thermally conductive shaft comprising a conductive rod, wherein the conductive rod is coupled to the secondary mesh; anda connection assembly that is configured to electrically couple the secondary mesh to the primary mesh.2. The semiconductor processing apparatus of claim 1 , further comprising a RF generator that is coupled to the conductive rod.3. The semiconductor processing apparatus of claim 2 , wherein a current generated by the RF generator is spread from the secondary mesh to the primary mesh.4. The semiconductor processing apparatus of claim 1 , wherein the primary mesh is configured to act as an electrostatic chucking electrode.5. A semiconductor processing apparatus claim 1 , comprising:a thermally conductive substrate support comprising a primary mesh and a secondary mesh, wherein the secondary mesh is spaced below the primary mesh;a thermally conductive shaft comprising a conductive rod ...

Plasma Excitation for Spatial Atomic Layer Deposition (ALD) Reactors

A spatial atomic layer deposition (ALD) system is disclosed. The system includes a chamber that includes a plurality of zones oriented along a track. Also included is a shuttle that is configured to support the substrate and transport the substrate to each of the plurality of zones to enable deposition of a thin film. The shuttle includes an RF power electrode and an RF ground electrode coupled to an RF power source. The RF electrode and the RF ground electrode are each embedded in the shuttle, such that power provided by the RF power source to the shuttle moves with the shuttle to each of the zones. The RF power source is configured to be activated in synchronization with moving the shuttle to one of the zones. 1. A spatial atomic layer deposition (ALD) system , comprising , a first zone for delivery of first reactant gases to be absorbed by a surface of a substrate when present;', 'a second zone for purging the first reactant gases that are not absorbed by the surface of the substrate;', 'a third zone for delivery of second reactant gases to be reacted with the first reactant gases that were absorbed by the surface of the substrate;, 'a chamber that includes,'}a shuttle configured to support the substrate and transport the substrate to the first, second and third zones, wherein the shuttle includes an RF power electrode and an RF ground electrode coupled to an RF power source; anda controller for synchronizing the RF power source to activate when the shuttle is moved to the third zone, wherein activating the RF power source enables generation of a plasma over a surface of the substrate when the second reactant gases are delivered to the third zone and the shuttle is located in the third zone.2. The spatial ALD system of claim 1 , wherein the shuttle is defined from a dielectric body that provides electrical isolation.3. The spatial ALD system of claim 2 ,wherein the RF power electrode is a first electrode of the shuttle and the RF ground electrode is a second ...

Scanning Ion Beam Etch

The present disclosure provides a method to adjust asymmetric velocity of a scan in a scanning ion beam etch process to correct asymmetry of etching between the inboard side and the outboard side of device structures on a wafer, while maintaining the overall uniformity of etch across the full wafer. 1. A method of correcting asymmetry during a wafer etching process , the method comprising:producing a plasma from a plasma source, the plasma source comprising a plasma chamber and the ion extraction grid system, the ion extraction grid system configured to produce an ion beam from the plasma, the ion beam having a central axis;supporting a wafer on a stage; andscanning the wafer relative to the ion beam along a scan path, wherein a scan velocity of the wafer is varied as the wafer travels along the scan path, wherein the scan velocity decreases as an area of the wafer exposed to the ion beam decreases.2. The method of claim 1 , further comprising rotating the stage about the central axis during at least a portion of the etching process.3. The method of claim 1 , further comprising tilting the stage with respect to the ion beam during at least a portion of the etching process.4. The method of claim 1 , further comprising cooling the wafer during at least a portion of the etching process.5. The method of claim 1 , wherein the scan path is linear.6. The method of claim 1 , wherein the scan path is non-linear.7. The method of claim 1 , wherein a center of the scan path coincides with a center of the ion beam.8. The method of claim 1 , wherein a center of the scan path does not coincide with a center of the ion beam.9. The method of claim 1 , wherein the scan velocity is asymmetric with respect to the central axis of the ion beam.10. The method of claim 1 , wherein the scan path comprising a scan out path from the first end of the ion beam to the second end of the ion beam and a scan back path from the second end of the ion beam to the first end of the ion beam claim 1 , ...

SUBSTRATE PROCESSING APPARATUS

A plasma supply unit includes a first conductive portion, a second conductive portion having at least a part extending to overlap the first conductive portion, and a ground shield located between the first conductive portion and the second conductive portion, and a substrate processing apparatus including the plasma supply unit. 1. A substrate processing apparatus comprising:a reactor;a gas supply unit located in the reactor; anda plasma supply unit electrically connected to the gas supply unit, a first conductive portion;', 'a second conductive portion extending to overlap at least a part of the first conductive portion; and', 'a ground shield located between the first conductive portion and the second conductive portion., 'wherein the plasma supply unit comprises2. The substrate processing apparatus of claim 1 , wherein the second conductive portion extends to the gas supply unit so that the second conductive portion and the gas supply unit are electrically connected to each other.3. The substrate processing apparatus of claim 1 , further comprising:a radio frequency (RF) rod extending to the first conductive portion to electrically connect a plasma generator to the first conductive portion; anda cover surrounding the RF rod and electrically connected to the reactor,wherein an induced signal component generated by at least one of the first conductive portion and the second conductive portion flows through the ground shield, the reactor, and the cover.4. The substrate processing apparatus of claim 3 , further comprising at least one metal member configured to mechanically fix the ground shield to the reactor.5. The substrate processing apparatus of claim 1 , wherein the ground shield has a plate-like structure claim 1 , and comprises at least one through-hole through which the first conductive portion and the second conductive portion are connected to each other.6. The substrate processing apparatus of claim 5 , wherein the ground shield has an annular disk shape ...

Balancing RF Circuit And Control For A Cross-Coupled SIMO Distribution Network

A single input multiple output plasma control system includes a splitter that receives a single input and generates multiple outputs. Each output from the splitter is provided to a load. The splitter includes branch circuits connected between selected splitter outputs. The branch circuits control voltage, current, power, frequency, or phase between each branch to enable controlling a predetermined relationship between the voltage, current, power, impedance, frequency, or phase measured at each load.

METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT

This application is directed to an apparatus for creating microwave radiation patterns for an object detection system. The apparatus includes a waveguide conduit having first slots at one side of the conduit and corresponding second slots at an opposite side of the conduit. The waveguide conduit is coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of first slots. A plunger is moveably positioned in the waveguide conduit from one end thereof. The plunger allows the waveguide conduit to be tuned to generally optimize the power of the microwaves exiting the first slots. Secondary plungers are each fitted in one of the second slots to independently tune or detune microwave emittance through a corresponding first slot. 1. A plasma deposition apparatus , comprising:a waveguide conduit having a plurality of primary slots therein located on one side of the waveguide conduit, said waveguide conduit being coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of primary slots, said waveguide conduit further comprising a plurality of secondary slots, each of said secondary slots being aligned with and on an opposite side of said waveguide conduit from a different one of said plurality of primary slots, said waveguide conduit further comprising a primary plunger adjustably mounted in the waveguide conduit to create a standing microwave in the waveguide conduit, said standing microwaves having maxima in microwave power at a location of said primary and secondary slots;a set of secondary plungers fitted in said secondary slots, wherein each secondary plunger includes an opening extending therethrough, and wherein each secondary plunger in a given secondary slot is movable in a direction toward or away from a primary slot aligned with said given secondary slot to direct radiation emitted through said plurality of primary slots; andone or more pipes extending through the ...

SPUTTERING TARGET AND METHOD FOR MANUFACTURING TRANSPARENT CONDUCTIVE FILM USING THE SAME

A sputtering target includes: a first crystal comprising InOin a bixbyite structure and SnOof a tetragonal structure; and a second crystal comprising InSnOin an orthorhombic structure, wherein the second crystal accounts for 8 to 16% of a total size of the first and second crystals. 1. A sputtering target comprising:{'sub': 2', '3', '2, 'a first crystal comprising InOin a bixbyite structure and SnOin a tetragonal structure; and'}{'sub': 4', '3', '12, 'a second crystal comprising InSnOin an orthorhombic structure,'}wherein the second crystal accounts for 8 to 16% of a total size of the first and second crystals.2. The sputtering target of claim 1 , wherein the first crystal comprises 85 to 95 wt % of InOand 5 to 15 wt % of SnO3. The sputtering target of claim 2 , wherein the first crystal comprises 90 wt % of InOand 10 wt % of SnO4. The sputtering target of claim 1 , wherein the second crystal comprises InSnOthat comprises 38 to 46 wt % of Sn based on 100 wt % of a total weight of In and Sn.5. The sputtering target of claim 4 , wherein the second crystal comprises InSnOthat comprises 42 wt % of Sn based on 100 wt % of a total weight of In and Sn.6. The sputtering target of claim 1 , wherein the second crystal has an average crystal size of 2 to 4 μm.7. The sputtering target of claim 1 , wherein the second crystal accounts for 8.8 to 15.2% of a total size of the first and second crystals.8. A method of manufacturing a transparent conductive layer claim 1 , the method comprising:{'claim-ref': [{'@idref': 'CLM-00001', 'claims 1'}, {'@idref': 'CLM-00007', '7'}], 'performing deposition of a transparent conductive layer by performing sputtering of the sputtering target of one of to ; and'}performing heat treatment of the transparent conductive layer.9. The method of claim 8 , wherein the deposition is performed at a temperature of 50 to 150 degrees.10. The method of claim 8 , wherein the heat treatment is performed at a temperature of 150 to 250 degrees. This application ...

Control of Impedance of RF Delivery Path

A plasma system includes an RF generator and a matchbox including an impedance matching circuit, which is coupled to the RF generator via an RF cable. The plasma system includes a chuck and a plasma reactor coupled to the matchbox via an RF line. The RF line forms a portion of an RF supply path, which extends between the RF generator through the matchbox, and to the chuck. The plasma system further includes a phase adjusting circuit coupled to the RF supply path between the impedance matching circuit and the chuck. The phase adjusting circuit has an end coupled to the RF supply path and another end that is grounded. The plasma system includes a controller coupled to the phase adjusting circuit. The controller is used for changing a parameter of the phase adjusting circuit to control an impedance of the RF supply path based on a tune recipe.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Described herein is a technique capable of uniformizing a quality of a film even when a processing environment changes. According to one aspect thereof, there is provided a method of manufacturing a semiconductor device, including: (a) loading a substrate into a process chamber; (b) supplying a gas to the substrate in the process chamber through a dispersion plate of a shower head while heating the dispersion plate by a shower head heater and exhausting the gas; (c) unloading the substrate; (d) measuring a temperature of the shower head before loading a subsequent substrate; and (e) comparing the temperature of the shower head after (d) with a pre-set temperature, and operating the shower head heater to control the temperature of the shower head to become close to the pre-set temperature when a difference between the temperature of the shower head and the pre-set temperature is greater than a predetermined value. 1. A method of manufacturing a semiconductor device , comprising:(a) loading a substrate into a process chamber;(b) supplying a gas to the substrate in the process chamber through a dispersion plate of a shower head provided upstream of the process chamber while heating the dispersion plate by a shower head heater and exhausting the gas from the process chamber;(c) unloading the substrate out of the process chamber;(d) measuring a temperature of the shower head before loading a subsequent substrate to be processed into the process chamber; and(e) comparing the temperature of the shower head after (d) with a pre-set temperature, and operating the shower head heater so as to control the temperature of the shower head to become close to the pre-set temperature when a difference between the temperature of the shower head and the pre-set temperature is greater than a predetermined value.2. The method of claim 1 , wherein the shower head heater heats the dispersion plate such that a temperature of an edge of the dispersion plate in (b) is higher than a ...

PLASMA POLYMERIZATION COATING APPARATUS AND PROCESS

Introduced here is a plasma polymerization apparatus. Example embodiments include a reaction chamber in a shape substantially symmetrical to a central axis. Some examples further include a rotation rack in the reaction chamber. The rotation rack may be operable to rotate relative to the reaction chamber about the central axis of the reaction chamber. Examples may further include reactive species discharge mechanisms positioned around a perimeter of the reaction chamber and configured to disperse reactive species into the reaction chamber in a substantially symmetrical manner from the outer perimeter of the reaction chamber toward the central axis of the reaction chamber, such that the reactive species form a polymeric coating on surfaces of the one or more substrates during said dispersion of the reactive species, and a collecting tube positioned along the central axis of the reaction chamber and having an air pressure lower than the reaction chamber. 1. A reaction chamber apparatus for performing plasma polymerization on the surface of one or more substrates , the apparatus comprising:a primary rotation rack operably coupled to a primary rotation shaft and configured to rotate along a central axis, the primary rotation rack including one or more arms extending from the primary rotation shaft and away from the central axis;a secondary rotation rack operably coupled to a secondary rotation shaft and configured to rotate on a secondary axis that is distal from the central axis, the secondary rotation shaft coupled to an arm of the one or more arms extending from the primary rotation shaft;one or more substrate platforms configured to carry the one or more substrates that are to receive the plasma polymerization coating, each substrate platform located on the secondary rotation rack; anda controller configured to transmit a rotation rate control signal to a rotation motor to rotate the primary rotation shaft and primary rotation rack at a controlled rotation rate.2. ...

Diffuser With Corner HCG

The present disclosure generally relates to a gas distribution plate for ensuring deposition uniformity. The gas distribution plate has multiple concave portions on the downstream side to ensure uniform deposition in corner regions of the processing chamber. 1. A gas distribution plate , comprising: a center hollow cathode cavity is disposed near the center of the diffuser body;', 'a corner hollow cathode cavity is disposed near the corner of the diffuser body, the corner hollow cathode cavity is larger than the center hollow cathode cavity;', 'a first hollow cathode cavity is disposed at a location between the center hollow cathode cavity and the corner hollow cathode cavity, the first hollow cathode cavity is greater in size than the center hollow cathode cavity and less in size than the corner hollow cathode cavity; and', 'a second hollow cathode cavity is disposed at a location between the corner hollow cathode cavity and the first hollow cathode cavity, the second hollow cathode cavity is less in size than the corner hollow cathode cavity and less in size than the first hollow cathode cavity., 'a diffuser body having an upstream surface, a downstream surface, four sides and four corners, the diffuser body having a plurality of gas passages extending from the upstream surface to the downstream surface, each gas passage includes a hollow cathode cavity2. The gas distribution plate of claim 1 , wherein the diffuser body is anodized.3. The gas distribution plate of claim 1 , wherein:a second corner hollow cathode cavity is disposed near another corner, the second corner hollow cathode cavity is larger than the center hollow cathode cavity;a third hollow cathode cavity is disposed at a location between the center hollow cathode cavity and the second corner hollow cathode cavity, the third hollow cathode cavity is greater in size than the center hollow cathode cavity and less in size than the second corner hollow cathode cavity; anda fourth hollow cathode cavity is ...

Method for manufacturing semiconductor device using plasma-enhanced atomic layer deposition

A method for fabricating a semiconductor device by using a plasma-enhanced atomic layer deposition apparatus. A substrate comprising a silicon substrate and a first oxide layer is provided. A plurality of stacked structures are deposited on the substrate, which comprises a dielectric layer and a conductive layer. The stacked structures are etched to form trenches. A second oxide layer is deposited by using a plasma-enhanced atomic layer deposition apparatus that includes a chamber, an upper electrode, a lower electrode, and a three-dimensional rotation device. The upper electrode is connected to a first radio-frequency power device. The upper electrode is configured to generate a plasma. The lower electrode is connected to a second radio-frequency power device. The three-dimensional rotation device drives the substrate to rotate. A high resistance layer is deposited on the second oxide layer. A low resistance layer is deposited on the high resistance layer.

PLASMA REACTOR FOR PROCESSING A WORKPIECE WITH AN ARRAY OF PLASMA POINT SOURCES

A plasma source consisting of an array of plasma point sources that controls generation of charged particles and radicals spatially and temporally over a user defined region. 1. A plasma reactor comprising:a processing chamber and a workpiece support in said processing chamber, said chamber comprising a lower ceiling facing said workpiece support;an upper ceiling overlying and facing said lower ceiling and a gas distributor overlying said upper ceiling;plural cavity walls defining plural cavities between said upper and lower ceilings, said gas distributor comprising plural gas flow paths to respective ones of said plural cavities;plural outlet holes in said lower ceiling aligned with respective ones of said plural cavities;respective power applicators adjacent respective ones of said plural cavities, a power source, plural power conductors coupled to respective ones of said power applicators, and a power distributor coupled between said power source and said plural power conductors.2. The plasma reactor of wherein said plural cavity walls comprise dielectric cavity walls.3. The plasma reactor of wherein said power source comprises an RF power generator and wherein each one of said respective power applicators is separated from an interior of a corresponding one of said plural cavities by the corresponding one of said plural cavity walls.4. The plasma reactor of wherein said power applicator comprises an electrode for capacitively coupling RF power into the corresponding one of said plural cavities.5. The plasma reactor of wherein said electrode surrounds a section of the corresponding one of said plural cavities.6. The plasma reactor of wherein said power applicator comprises a coil antenna for inductively coupling RF power into the corresponding one of said plural cavities.7. The plasma reactor of wherein said coil antenna comprises a conductor coiled around a section of the corresponding one of said plural cavities.8. The plasma reactor of wherein said power ...

Substrate Processing Apparatus

A capacitively coupled plasma substrate processing apparatus includes: a process chamber which is exhausted to vacuum and provides a sealed internal space; a gas inflow pipe which is connected to the process chamber to provide a process gas into the process chamber; a gas distribution unit which is connected to the gas inflow pipe to inject the process gas flowing into the gas inflow pipe in the internal space; an impedance matching network which is disposed outside the process chamber and transfers an RF power of an RF power supply to the gas distribution unit; an RF connection line which connects an output of the impedance matching network to the gas inflow pipe or the gas distribution unit; and a shielding plate which is configured such that at least one of the RF connection line and the gas inflow pipe penetrates the shielding plate and includes a ferromagnetic material. 1. A capacitively coupled plasma substrate processing apparatus comprising:a process chamber which is exhausted to vacuum and provides a sealed internal space;a gas inflow pipe which is connected to the process chamber to provide a process gas into the process chamber;a gas distribution unit which is connected to the gas inflow pipe to inject the process gas flowing into the gas inflow pipe in the internal space;an impedance matching network which is disposed outside the process chamber and transfers an RF power of an RF power supply to the gas distribution unit;an RF connection line which connects an output of the impedance matching network to the gas inflow pipe or the gas distribution unit; anda shielding plate which is configured such that at least one of the RF connection line and the gas inflow pipe penetrates the shielding plate and includes a ferromagnetic material.2. The capacitively coupled plasma substrate processing apparatus as set forth in claim 1 , whereinthe shielding plate includes a bottom non-magnetic conductive plate, a middle ferromagnetic plate, and a top non-magnetic ...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

A method of manufacturing a semiconductor device, includes: supplying precursor gas into process chamber in which plural substrates are accommodated by sequentially performing: supplying inert gas at first inert gas flow rate from first nozzle into the process chamber; supplying the inert gas at second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying precursor gas from the first nozzle into the process chamber; and supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber while the process chamber is evacuated from an upstream side of flow of the precursor gas; stopping supply of the precursor gas; removing the precursor gas remaining in the process chamber; supplying reaction gas from a second nozzle into the process chamber; and removing the reaction gas remaining in the process chamber. 1. A method of manufacturing a semiconductor device , comprising: (a) supplying an inert gas at a first inert gas flow rate from a first nozzle extending along an arrangement direction of the plurality of substrates into the process chamber;', '(b) supplying the inert gas at a second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying the precursor gas from the first nozzle into the process chamber; and', '(c) supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber in a state in which the process chamber is evacuated from one end side which is an upstream side of a flow of the precursor gas;, 'supplying a precursor gas stored in a reservoir part into a process chamber in which a plurality of substrates are arranged and accommodated by sequentially performingstopping supply of the precursor gas;removing the precursor gas remaining in the process chamber;supplying a reaction gas from a second nozzle into the process chamber; andremoving the ...

Heat conductive spacer for plasma processing chamber

A plasma processing chamber includes a chamber body and a lid assembly coupled to the chamber body to define a processing volume. The lid assembly includes a backing plate coupled to the chamber body, a diffuser with a plurality of openings formed therethrough, and a heat conductive spacer disposed between and coupled to the backing plate and the diffuser to transfer heat from the diffuser to the backing plate. The plasma processing chamber further includes a substrate support disposed within the processing volume.

PLASMA FILM FORMING METHOD

Examples of a plasma film forming method include repeating feeding material gas onto a substrate placed on a susceptor via a shower head provided to oppose the susceptor, performing plasma film formation on the substrate by applying high frequency power to the shower head while providing reactant gas onto the substrate, and performing post-purge of discharging the gas used in the plasma film formation while heating the shower head, for a time longer than 0.1 seconds, a plurality of times in this order. 1. A plasma film forming method comprising:repeating the following operations a plurality of times in the recited order:feeding material gas onto a substrate placed on a susceptor via a shower head provided to oppose the susceptor;performing plasma film formation on the substrate by applying high frequency power to the shower head while providing reactant gas onto the substrate; andperforming post-purge of discharging the gas used in the plasma film formation while heating the shower head, for a time longer than 0.1 seconds, such that in the post-purge, an adsorption inhibitor is provided onto the substrate through decomposition of the material gas adsorbed on a gas channel provided on the shower head or on an upper face of the shower head, and the adsorption inhibitor is localized on the substrate.2. The plasma film forming method according to claim 1 , wherein the time of the post-purge is not less than 5 seconds.3. (canceled)4. A plasma film forming method comprising:repeating the following operations a plurality of times in the recited order:feeding material gas onto a substrate placed on a susceptor via a shower head provided to oppose the susceptor;performing plasma film formation on the substrate by applying high frequency power to the shower head while providing reactant gas onto the substrate; andperforming post-purge of discharging the gas used in the plasma film formation while heating the shower head, for a time longer than 0.1 seconds, whereinthe shower ...

METHOD AND DEVICE FOR FORMING A LAYER ON A SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR SUBSTRATE

A method of forming a layer on a plurality of semiconductor substrates is described, wherein the semiconductor substrates are accommodated in a wafer boat such that the semiconductor substrates are arranged in opposed pairs having their surfaces to be coated facing each other, and such that an alternating voltage can be applied between the semiconductor substrates of each pair to generate a plasma between the wafers of a pair, and wherein the wafer boat with the plurality of semiconductor substrates is accommodated in a process chamber. The method comprises the following steps: heating the process chamber to a predetermined temperature and creating a predetermined vacuum in the process chamber; introducing a first precursor gas into the process chamber at the predetermined temperature to create a deposition of a component of the first precursor gas on the surface of the substrate, wherein the deposition is self-limiting and in substance produces a single atomic layer of the deposited component; introducing a second precursor gas into the process chamber at the predetermined temperature to effect reaction with the previously deposited components and to thereby cause the deposition of a component of the second precursor gas on the surface of the substrate, wherein the reaction and thus the deposition is self-limiting and produces one atomic layer of the deposited component. The successive cycles of introducing first and second precursor gases is repeated until a first layer with a predetermined layer thickness or a predetermined number of cycles is reached. Then at least two different precursor gases are introduced into the process chamber and a plasma is generated from the mixture of the precursor gases between the adjacent semiconductor substrates of each pair to deposit a second layer on the first layer, the second layer having substantially the same composition as the first layer. 1. A method for forming a layer on a plurality of semiconductor substrates , wherein ...

APPARATUS FOR DEPOSITING TWO-DIMENSIONAL MATERIALS

An apparatus for depositing a two-dimensional material includes a chamber, a stage provided in the chamber, a dielectric window including a first surface facing the stage and a second surface provided on a side opposite to the first surface, a planar high-frequency antenna provided on the second surface of the dielectric window, and a first gas nozzle configured to provide a source gas into the chamber, wherein an alternating current electric signal having a frequency of about 1 MHz to about 1 GHz is applied to the planar high-frequency antenna. 1. An apparatus for depositing a two-dimensional material , the apparatus comprising:a chamber;a stage in the chamber;a dielectric window including a first surface facing the stage and a second surface provided on a side opposite to the first surface;a planar high-frequency antenna on the second surface of the dielectric window; anda first gas nozzle configured to provide a source gas into the chamber,wherein an alternating current electric signal having a frequency of about 1 MHz to about 1 GHz is applied to the planar high-frequency antenna.2. The apparatus of claim 1 , further comprising:a second gas nozzle in a region adjacent to an edge of the first surface of the dielectric window,wherein the second gas nozzle provides an inert gas in the chamber.3. The apparatus of claim 1 , further comprising:a third gas nozzle in a region adjacent to a center of the first surface of the dielectric window,wherein the third gas nozzle provides an inert gas in the chamber.4. The apparatus of claim 1 , whereinthe first gas nozzle comprises a plurality of first gas nozzles, andthe plurality of first gas nozzles are arranged at regular intervals in a circumferential direction of an inner surface of the chamber.5. The apparatus of claim 1 , wherein the first gas nozzle further provides an inert gas in the chamber.6. The apparatus of claim 1 , further comprising:a nozzle heating unit configured to heat the first gas nozzle.7. The apparatus ...

FILM FORMING METHOD AND PROCESSING APPARATUS

There is provided a film forming method of forming a carbon-containing film by a microwave plasma from a microwave source, the film forming method including: a dummy step of performing a dummy process by generating plasma of a first carbon-containing gas within a processing container; a placement step of placing a substrate on a stage within the processing container; and a film forming step of forming the carbon-containing film on the substrate using plasma of a second carbon-containing gas. 1. A film forming method of forming a carbon-containing film by a microwave plasma from a microwave source , the film forming method comprising:a dummy step of performing a dummy process by generating plasma of a first carbon-containing gas within a processing container;a placement step of placing a substrate on a stage within the processing container; anda film forming step of forming the carbon-containing film on the substrate using plasma of a second carbon-containing gas.2. The film forming method of claim 1 , further comprising: a cleaning step of cleaning an interior of the processing container before the dummy step and after the film forming step.3. The film forming method of claim 2 , wherein the cleaning step is performed in a state in which a dummy substrate is placed on the stage.4. The film forming method of claim 3 , wherein the dummy step comprises:performing a plasma processing using a hydrogen-containing gas at a first pressure;generating plasma of a hydrogen-and-argon-containing gas at the first pressure; andgenerating plasma of the first carbon-containing gas by reducing an internal pressure of the processing container to a second pressure lower than the first pressure and starting to supply the first carbon-containing gas.5. The film forming method of claim 4 , wherein the film forming step comprises:performing an annealing using a hydrogen-containing gas at a first pressure;generating plasma of an argon-containing gas at the first pressure; andgenerating ...

SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

A substrate processing method capable of improving thin film uniformity on a substrate by controlling the position of a substrate supporting apparatus includes: a first operation of moving the substrate supporting apparatus in a first direction by a first predetermined distance; a second operation of moving the substrate supporting apparatus in a second direction by a second predetermined distance; a third operation of moving the substrate supporting apparatus in the second direction by the first predetermined distance; and a fourth operation of moving the substrate supporting apparatus in the first direction by the second predetermined distance, wherein the second direction may be opposite to the first direction. 1. A substrate processing method comprising:a first operation of moving a substrate supporting apparatus in a first direction by a first predetermined distance;a second operation of moving the substrate supporting apparatus in a second direction by a second predetermined distance;a third operation of moving the substrate supporting apparatus in the second direction by the first predetermined distance; anda fourth operation of moving the substrate supporting apparatus in the first direction by the second predetermined distance,wherein the second direction is opposite to the first direction.2. The substrate processing method of claim 1 ,a fifth operation of moving the substrate supporting apparatus in a third direction by the first predetermined distance;a sixth operation of moving the substrate supporting apparatus in a fourth direction by the second predetermined distance;a seventh operation of moving the substrate supporting apparatus in the fourth direction by the first predetermined distance; andan eighth operation of moving the substrate supporting apparatus in the third direction by the second predetermined distance,wherein the fourth direction is perpendicular to the first direction and the second direction, and is opposite to the third direction.3. ...

Plasma Source For Rotating Susceptor

Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode. 1. A plasma source assembly comprising:a housing having an inner peripheral edge, an outer peripheral edge and a front face, the housing including a gas inlet to form a flow path from the gas inlet to allow a flow of gas to pass through the housing and out an opening in the front face;an RF hot electrode within the housing, the RF hot electrode having an elongate body with an inner peripheral end near the inner peripheral edge of the housing and an outer peripheral end near the outer peripheral edge of the housing and defining a length of the RF hot electrode;a return electrode having an elongate body extending between the inner peripheral edge and the outer peripheral edge of the housing, the return electrode spaced from the RF hot electrode to provide a gap in which a plasma can form; andan RF feed connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode,wherein a substrate moved along an arcuate path while facing the front face experiences a uniform plasma exposure across the substrate.2. The plasma source assembly of claim 1 , wherein the return electrode is the housing.3. The plasma source assembly of claim 1 , wherein the RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 5% of the length of the RF hot electrode.4. The plasma source assembly of claim 1 , further comprising a RF hot electrode cladding positioned so that the RF hot electrode is not exposed.5. The plasma ...

System, method and support for coating eyeglass lenses

An installation, a carrier, and a method for coating eyeglass lenses are proposed, wherein a carrier with eyeglass lenses held in a rotatable manner is conveyed in succession in different coating devices or coating lines, in order to coat in an alternating manner opposite sides of the eyeglass lenses and/or to apply different coatings. In particular, the carriers with the eyeglass lenses are conveyed from a coating device or coating line by means of an evacuated transfer chamber to another coating device or coating line.

Method for manufacturing sputtering target, method for forming oxide film, and transistor

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

Method for manufacturing sputtering target, method for forming oxide film, and transistor

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

INTERCHANGEABLE MAGNET PACK

An apparatus includes a target, wherein the target includes a nonuniform erosion profile. The apparatus also includes a number of interchangeable magnetic and non-magnetic inserts. The interchangeable magnetic and non-magnetic inserts are configured to control a pass through flux based on the nonuniform erosion profile. 1. An apparatus , comprising:a plurality of cells;a cover removably connected to the plurality of cells;a yoke removably connected to the plurality of cells;a plurality of removable magnetic inserts within the plurality of cells; and the plurality of removable magnetic and non-magnetic inserts are configured to provide a radially nonuniform magnetic flux, and', 'the radially nonuniform magnetic flux is configured to provide a substantially uniform sputter thickness., 'a plurality of removable non-magnetic inserts within the plurality of cells, wherein'}2. The apparatus of claim 1 , wherein a cell of the plurality of cells includes a number of the plurality of removable magnetic inserts or a number of the plurality of nonmagnetic inserts.3. The apparatus of claim 1 , wherein the plurality of removable magnetic inserts includes a plurality of lengths configured to control magnetic moments of cells within the plurality of cells.4. The apparatus of claim 1 , wherein the plurality of removable magnetic inserts are Neodymium claim 1 , Samarium Cobalt claim 1 , Ceramic claim 1 , Alnico claim 1 , Stainless Steel claim 1 , or Steel.5. The apparatus of wherein the plurality of removable magnetic inserts are configured with a number of magnetic orientations within the plurality of cells.6. The apparatus of claim 1 , wherein one of the plurality of magnetic inserts and one of the plurality of nonmagnetic inserts are stacked within one of the plurality of cells.7. The apparatus of claim 1 , wherein the substantially uniform sputter thickness includes a sputter thickness variation of less than five percent across a substrate.8. An apparatus claim 1 , comprising:a ...

FILM FORMING APPARATUS, RECORDING MEDIUM, AND FILM FORMING METHOD

A film forming apparatus includes a lower electrode, an upper electrode provided above and in opposition to the lower electrode and having a plurality of openings, a transport tube which provides a passage extending generally in a vertical direction and connecting to a space above the upper electrode, a gas supply line connected to a side surface of the transport tube and providing a passage communicating with a space in the transport tube, and a gas diffuser gate valve connected to a portion of the side surface of the transport tube at a position lower in the vertical direction than the position at which the gas supply line is connected, wherein the gas diffuser gate valve has a diffusion plate which blocks part of the space in the transport tube. 1. A film forming apparatus comprising:a lower electrode;an upper electrode provided above and in opposition to the lower electrode and having a plurality of openings;a transport tube which provides a passage extending generally in a vertical direction and connecting to a space above the upper electrode;a gas supply line connected to a side surface of the transport tube and providing a passage communicating with a space in the transport tube; anda gas diffuser gate valve connected to a portion of the side surface of the transport tube at a position lower in the vertical direction than the position at which the gas supply line is connected,wherein the gas diffuser gate valve has a diffusion plate which blocks part of the space in the transport tube.2. The film forming apparatus according to claim 1 , wherein the gas diffuser gate valve has a drive device which puts the diffusion plate in the transport tube and retracts the diffusion plate from the transport tube.3. The film forming apparatus according to claim 1 , wherein a plurality of holes are formed in the diffusion plate.4. The film forming apparatus according to claim 3 , wherein a width of each of the plurality of holes at a lower surface of the diffusion plate is ...

GAS SPRAYING APPARATUS FOR SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING APPARATUS

The present disclosure relates to a gas distribution apparatus for substrate processing apparatuses, including: a distribution body distributing a process gas toward a substrate supporting unit supporting a substrate; a first injection hole provided in the distribution body, a process gas which is to be distributed toward the substrate supporting unit being injected through the first inject hole; and a second injection hole provided in the distribution body at a position spaced apart from the first injection hole, a process gas which is to be distributed toward the substrate supporting unit being injected through the second inject hole, and a substrate processing apparatus. 1. A substrate processing apparatus comprising:a process chamber;a substrate supporting unit installed in the process chamber to support a plurality of substrates;a chamber lid covering an upper portion of the process chamber; anda process gas distribution unit installed in the chamber lid to distribute a process gas toward the substrate supporting unit,whereinthe process gas distribution unit comprises a distribution body installed in the chamber lid and a plasma electrode facing the substrate supporting unit, andthe plasma electrode comprises a first plasma electrode and a second plasma electrode, and the second plasma electrode is shorter than the first plasma electrode.2. A substrate processing apparatus comprising:a process chamber;a substrate supporting unit installed in the process chamber to support a plurality of substrates;a chamber lid covering an upper portion of the process chamber; anda process gas distribution unit installed in the chamber lid to distribute a process gas toward the substrate supporting unit,whereinthe process gas distribution unit comprises a distribution body installed in the chamber lid, a first injection hole through which a process gas which is to be distributed toward the substrate supporting unit is injected, and a second injection hole through which a ...

PLASMA GENERATING DEVICE, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

There is provided a plasma generating device that includes a first electrode connected to a high-frequency power supply, and a second electrode to be grounded, wherein the first electrode and the second electrode are alternately arranged such that a number of electrodes of the first electrode and the second electrode are in an odd number of three or more in total, and wherein the second electrode is used in common for two of the first electrode being respectively adjacent to the second electrode used in common. 1. A plasma generating device , comprising:at least one first electrode connected to a high-frequency power supply; andat least one second electrode to be grounded,wherein the first electrode and the second electrode are alternately arranged such that a number of electrodes of the first electrode and the second electrode are in an odd number of three or more in total, andwherein the second electrode is used in common for two of the first electrode being respectively adjacent to the second electrode used in common.2. The device of claim 1 , further comprising:a buffer structure configured to form a buffer chamber that accommodates the first electrode and the second electrode,wherein a gas supply port that supplies a gas into a process chamber is provided on a wall surface of the buffer structure.3. The device of claim 2 , wherein the gas supply port is provided on a side wall surface of the buffer structure located between the first electrode and the second electrode and facing a side surface of a substrate.4. The device of claim 2 , wherein the gas supply port is opened to face a center of a substrate.5. A substrate processing apparatus claim 2 , comprising:a process chamber in which a substrate is processed;a first gas supply system configured to supply a first gas into the process chamber;a second gas supply system configured to supply a second gas into the process chamber;a plasma generating device configured to activate the second gas by converting the ...

COPPER MATERIAL FOR HIGH-PURITY COPPER SPUTTERING TARGET, AND HIGH-PURITY COPPER SPUTTERING TARGET

In a copper material for a high-purity copper sputtering target of the present invention, a purity of Cu excluding O, H, N, and C is in a range of 99.999980 mass % or higher and 99.999998 mass % or lower, an amount of Al is 0.005 ppm by mass or less, and an amount of Si is 0.05 ppm by mass or less. 1. A copper material for a high-purity copper sputtering target ,wherein a purity of Cu excluding O, H, N, and C is in a range of 99.999980 mass % or higher and 99.999998 mass % or lower,an amount of Al is 0.005 ppm by mass or less, andan amount of Si is 0.05 ppm by mass or less.2. The copper material for a high-purity copper sputtering target according to claim 1 , wherein an amount of S is 0.03 ppm by mass or less.3. The copper material for a high-purity copper sputtering target according to claim 1 ,wherein an amount of Cl is 0.1 ppm by mass or less.4. The copper material for a high-purity copper sputtering target according to claim 1 ,wherein an amount of O is less than 1 ppm by mass,an amount of H is less than 1 ppm by mass, andan amount of N is less than 1 ppm by mass.5. The copper material for a high-purity copper sputtering target according to claim 1 ,wherein an amount of C is 1 ppm by mass or less.6. A high-purity copper sputtering target produced by using the copper material for a high-purity copper sputtering target according to .7. The copper material for a high-purity copper sputtering target according to claim 2 ,wherein an amount of Cl is 0.1 ppm by mass or less.8. The copper material for a high-purity copper sputtering target according to claim 2 ,wherein an amount of O is less than 1 ppm by mass,an amount of H is less than 1 ppm by mass, andan amount of N is less than 1 ppm by mass.9. The copper material for a high-purity copper sputtering target according to claim 3 ,wherein an amount of O is less than 1 ppm by mass,an amount of H is less than 1 ppm by mass, andan amount of N is less than 1 ppm by mass.10. The copper material for a high-purity copper ...

METHOD FOR SPUTTERING SYSTEM AND USING COUNTERWEIGHT

A method for depositing material from a target onto substrates, comprising using a processing chamber; a sputtering target having length L and having sputtering material provided on front surface thereof; a magnet operable to reciprocally scan across the length L in close proximity to rear surface of the target; and a counterweight operable to reciprocally scan at same speed but opposite direction of the magnet; and moving the magnets at speeds at least several times faster than the speed of the substrates. 1. A method for depositing material from a target onto substrates in a sputtering chamber , comprising:situating a sputtering target having length L and having sputtering material provided on front surface thereof inside a processing chamber;providing a magnet assembly operable to reciprocally scan across the length L linearly back and forth in behind the target, and a counterweight operable to reciprocally scan at same speed but opposite direction of the magnet assembly;continuously delivering substrates arranged at a pitch P and moving at a constant delivery speed in front of the sputtering target, wherein L is several times longer that P;scanning the magnet assembly at scanning speed that is at least several times the delivery speed.2. The method of claim 1 , wherein the scanning speed is different in a downstream direction claim 1 , when the magnet is scanning the target same direction as the substrate delivery claim 1 , than in the upstream direction claim 1 , when it is scanning the target in the opposite direction as the substrate delivery.3. The method of claim 2 , wherein the scanning speed in the downstream direction is at least seven times the delivery speed.4. The method of claim 2 , wherein the scanning speed in the downstream direction is at least five times the delivery speed.5. The method of claim 2 , wherein the scanning speed in the downstream direction and in the upstream direction is chosen such that a relative speed of the magnet with respect ...

PLASMA GENERATING DEVICE, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

There is provided a substrate processing apparatus that includes a substrate support configured to support one or more substrates, a process chamber in which the one or more substrates are processed, a gas supplier configured to supply gas, and a plasma generator including a plurality of first rod-shaped electrodes connected to a high-frequency power supply; and a second rod-shaped electrode installed between two first rod-shaped electrodes is grounded; and a buffer structure configured to accommodate the plurality of first rod-shaped electrodes and the second rod-shaped electrode, and having a first wall surface on which a gas supply port that supplies gas into the process chamber is installed. Wherein the plasma generator is configured to convert gas into plasma by the plurality of first rod-shaped electrodes and the second rod-shaped electrode to supply the plasma-converted gas to the process chamber from the gas supply port. 1. A substrate processing apparatus , comprising:a substrate support configured to support one or more substrates;a process chamber in which the one or more substrates are processed;a gas supplier configured to supply gas; and a plurality of first rod-shaped electrodes connected to a high-frequency power supply; and', 'a second rod-shaped electrode installed between two first rod-shaped electrodes among the plurality of first rod-shaped electrodes, and that is grounded; and', 'a buffer structure configured to accommodate the plurality of first rod-shaped electrodes and the second rod-shaped electrode, and having a first wall surface on which a gas supply port that supplies gas into the process chamber is installed,, 'a plasma generator includingwherein the plasma generator is configured to convert gas into plasma by the plurality of first rod-shaped electrodes and the second rod-shaped electrode to supply the plasma-converted gas to the process chamber from the gas supply port.2. The substrate processing apparatus of claim 1 , wherein the ...

PLASMA POLYMERIZATION COATING APPARATUS

Introduced here is a plasma polymerization apparatus. Example embodiments include a reaction chamber in a shape substantially symmetrical to a central axis. Some examples further include a rotation rack in the reaction chamber. The rotation rack may be operable to rotate relative to the reaction chamber about the central axis of the reaction chamber. Examples may further include two reactive species discharge mechanisms positioned around a perimeter of the reaction chamber and configured to disperse reactive species into the reaction chamber in a substantially symmetrical manner from the outer perimeter of the reaction chamber toward the central axis of the reaction chamber, such that the reactive species form a polymeric coating on surfaces of the one or more substrates during said dispersion of the reactive species, and a collecting tube positioned along the central axis of the reaction chamber and having an air pressure lower than the reaction chamber. 1. A plasma polymerization apparatus comprising:a reaction chamber in a shape substantially symmetrical to a central axis;a rotation rack in the reaction chamber, the rotation rack configured to carry one or more substrates that are to receive plasma polymerization coating, the rotation rack operable to rotate relative to the reaction chamber about the central axis of the reaction chamber;two reactive species discharge mechanisms positioned around a perimeter of the reaction chamber and operable to disperse reactive species into the reaction chamber in a substantially symmetrical manner from the outer perimeter of the reaction chamber toward the central axis of the reaction chamber, such that the reactive species form a polymeric coating on surfaces of the one or more substrates during said dispersion of the reactive species; anda collecting tube positioned along the central axis of the reaction chamber and operable to have an air pressure lower than the reaction chamber to collect remaining reactive species, ...

METHOD OF FILLING RECESS AND PROCESSING APPARATUS

A method of filling a germanium film in a recess on a substrate to be processed having an insulating film on which the recess is formed on a surface of the substrate, includes forming a first germanium film so as to fill the recess by supplying a germanium raw material gas to the substrate, etching the first germanium film with an etching gas containing an excited Hgas or NHgas, and forming a second germanium film on the first germanium film so as to fill the recess by supplying a germanium raw material gas. 1. A method of filling a germanium film in a recess on a substrate to be processed having an insulating film on which the recess is formed on a surface of the substrate , comprising:forming a silicon film on a surface of the insulating film having the recess formed thereon;forming a first germanium film on the silicon film so as to fill the recess by supplying a germanium raw material gas to the substrate;{'sub': 2', '3, 'etching the first germanium film with an etching gas containing an excited Hgas or NHgas; and'}forming a second germanium film on the first germanium film so as to fill the recess by supplying a germanium raw material gaswherein, in the act of etching, the first germanium film is selectively etched with respect to the insulating film and the silicon film.2. A processing apparatus for filling a germanium film in a recess on a substrate to be processed having an insulating film on which the recess is formed on its surface , comprising:a process vessel configured to accommodate the substrate;a gas supply part configured to supply a predetermined gas into the process vessel;an excitation mechanism configured to excite the predetermined gas;a heating mechanism configured to heat the interior of the process vessel;an exhaust mechanism configured to exhaust the interior of the process vessel so as to be in a depressurized state; anda control part configured to control the gas supply part, the excitation mechanism, the heating mechanism, and the ...

METHOD FOR MANUFACTURING SPUTTERING TARGET, METHOD FOR FORMING OXIDE FILM, AND TRANSISTOR

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact. 1. A method for manufacturing a semiconductor device , comprising the steps of:forming a gate electrode;forming a first oxide film by using a first sputtering target comprising In, Ga and Zn over the gate electrode;forming a second oxide film by using a second sputtering target comprising In, Ga and Zn over the first oxide film;forming a source electrode over the second oxide film; andforming a drain electrode over the second oxide film,wherein the first oxide film comprises a microcrystal,wherein the second oxide film comprises a c-axis aligned crystal part,wherein an atomic ratio of metal elements of the second sputtering target satisfies Ga>In and Zn>Ga.2. The method for manufacturing a semiconductor device according to claim 1 , wherein an atomic ratio of metal elements of the first sputtering target satisfies In:Ga:Zn=1:1:1.3. The method for manufacturing a semiconductor device according to claim 1 , wherein the c-axis of the second oxide film is aligned in a direction parallel to a normal vector of a surface where the second oxide film is formed or a top surface of the second oxide film.4. The method for manufacturing a semiconductor device according to claim 1 , wherein a direction of an a-axis and a b-axis of a first region of ...

COPPER SUBSTRATE FOR DEPOSITION OF GRAPHENE

Technologies are presented for growing graphene by chemical vapor deposition (CVD) on a high purity copper surface. The surface may be prepared by deposition of a high purity copper layer on a lower purity copper substrate using deposition processes such as sputtering, evaporation, electroplating, or CVD. The deposition of the high purity copper layer may be followed by a thermal treatment to facilitate grain growth. Use of the high purity copper layer in combination with the lower purity copper substrate may provide thermal expansion matching, compatibility with copper etch removal, or reduction of contamination, producing fewer graphene defects compared to direct deposition on a lower purity substrate at substantially less expense than deposition approaches using a high purity copper foil substrate. 1. A copper substrate for growing a graphene monolayer , the copper substrate comprising:a first copper layer characterized by a first copper percentage by weight, a first oxygen percentage by weight, and a first average thickness; anda second copper layer in contact with the first copper layer, wherein the second copper layer is characterized by a second copper percentage by weight, a second oxygen percentage by weight, and a second average thickness; the second copper percentage is greater than the first copper percentage;', 'the second oxygen percentage is about the same or less than the first oxygen percentage; and', 'the second average thickness is less than the first average thickness., 'wherein2. The copper substrate of claim 1 , wherein the first average thickness is at least about 3 micrometers.3. The copper substrate of claim 1 , wherein the second average thickness is one atomic monolayer of copper to about 25 micrometers.4. The copper substrate of claim 1 , wherein the second copper percentage is greater than the first copper percentage by at least about 0.1%.5. The copper substrate of claim 1 , wherein:the second copper percentage is at least about 99.9%, ...

Large Sized Showerhead Assembly

A large sized showerhead assembly and a thin film deposition apparatus including the same are provided. The large sized showerhead assembly includes a backing plate disposed in a chamber, and a showerhead disposed below the backing plate to supply gas toward a substrate, wherein the showerhead is connected to the backing plate to thermally expand. 1. A large sized showerhead assembly comprising:a backing plate disposed in a chamber; anda showerhead disposed below the backing plate to supply gas toward a substrate,wherein the showerhead is connected to the backing plate to thermally expand.2. The large sized showerhead assembly of claim 1 , further comprising a connecting unit that connects the showerhead to the backing plate claim 1 ,wherein the showerhead comprises an extension member that extends upward along an edge of an upper surface of the showerhead and the extension member is inserted into the connecting unit and the extension member is connected to the connecting unit to thermally expand to support the showerhead.3. The large sized showerhead assembly of claim 2 , wherein the connecting unit connects the extension member to the backing plate in a lateral direction of the backing plate.4. The large sized showerhead assembly of claim 3 , wherein the connecting unit comprises:a groove portion into which the extension member is inserted and which has a greater internal volume than a size of the extension member to allow the extension member to accommodate thermal expansion of the showerhead; anda support which has an end portion fixed to the extension member through a first through hole of a side wall of the backing plate to support the extension member.5. The large sized showerhead assembly of claim 4 , wherein the support comprises:a first support coupled to the extension member in a perpendicular direction thereto and configured to guide a volume change due to thermal expansion of the extension member; anda second support coupled to the extension member to ...

Method of Fine Tuning a Magnetron Sputtering Electrode in a Rotatable Cylindrical Magnetron Sputtering Device

A magnetron sputtering electrode for use in a rotatable cylindrical magnetron sputtering device, the electrode including a cathode body defining a magnet receiving chamber and a cylindrical target surrounding the cathode body. The target is rotatable about the cathode body. A magnet arrangement is received within the magnet receiving chamber, the magnet arrangement including a plurality of magnets. A shunt is secured to the cathode body and proximate to a side of the magnet arrangement, the shunt extending in a plane substantially parallel to the side of the magnet arrangement. A method of fine-tuning a magnetron sputtering electrode in a rotatable cylindrical magnetron sputtering device is also disclosed. 17-. (canceled)8. A method of fine-tuning a magnetron sputtering electrode in a rotatable cylindrical magnetron sputtering device , the magnetron sputtering electrode comprising:a cathode body defining a magnet receiving chamber;a cylindrical target surrounding the cathode body, wherein the target is rotatable about the cathode body; anda magnet arrangement received within the magnet receiving chamber, the magnet arrangement comprised of a plurality of magnets; identifying a localized region of a substrate coating having a thickness that is non-uniform beyond a predetermined acceptable deviation;', 'selecting a shunt having a size and shape corresponding to the localized region; and', 'attaching the shunt to the cathode body, proximate to a side of the magnet arrangement and extending in a plane substantially parallel to the side of the magnet arrangement, at a length position along the length of the magnet arrangement corresponding to the localized region of the substrate coating, and at a height position relative to the height of the magnet arrangement, such that the shunt reduces the magnetic field of the magnet arrangement by an effective amount to cause the thickness of the coating of the substrate at the localized region to be within the predetermined ...

Plasma Processing Apparatus

A plasma processing apparatus for performing a plasma process on a workpiece inside a processing container by radiating microwaves from an antenna into the processing container through a top plate of the processing container to generate plasma, which includes: a pressing member having grooves formed in a surface facing the top plate, and configured to press the antenna against the top plate; and elastic members respectively disposed in the grooves and deformed while being sandwiched between the pressing member and the antenna, and configured to apply a pressing force to the antenna toward the processing container. The grooves and the elastic members are respectively provided in concentric annular regions each having a center coinciding with a predetermined axis perpendicular to the top plate, and the elastic members are disposed only in a portion of the annular regions. 1. A plasma processing apparatus for performing a plasma process on a workpiece inside a processing container by radiating microwaves from an antenna into the processing container through a top plate of the processing container to generate plasma , the apparatus comprising:a pressing member having a plurality of grooves formed in a surface facing the top plate of the processing container, and configured to press the antenna against the top plate of the processing container; anda plurality of elastic members respectively disposed in the plurality of grooves and deformed while being sandwiched between the pressing member and the antenna, the plurality of elastic members being configured to apply a pressing force to the antenna toward the processing container,wherein the plurality of grooves and the plurality of elastic members are respectively provided in a plurality of concentric annular regions each having a center coinciding with a predetermined axis perpendicular to the top plate so as to have a circular arc shape or an annular shape around the predetermined axis, andthe plurality of elastic ...

MULTI-ZONE GAS DISTRIBUTION SYSTEMS AND METHODS

The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface. 1. A substrate processing system comprising:a zonal distribution manifold having a first manifold channel and a second manifold channel;a zonal distribution plate affixed to the zonal distribution manifold, wherein the zonal distribution plate has an inner zone channel configured to receive a first gas from the first manifold channel and an outer zone channel configured to receive a second gas from the second manifold channel;a zonal blocker plate affixed to the zonal distribution plate, wherein the zonal blocker plate has a top inner recess configured to receive the first gas from the inner zone channel and a top outer recess configured to receive the second gas from the outer zone channel;wherein the zonal blocker plate further comprises a bottom inner recess fluidly coupled to the top inner recess through an inner showerhead portion and further comprises a bottom outer recess fluidly coupled to the top outer recess through an outer showerhead portion; anda faceplate affixed to the zonal blocker plate having through- ...

SYMMETRIC PLASMA PROCESS CHAMBER

Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems. 1. A plasma processing apparatus , comprising:a lid assembly and a chamber body enclosing a processing region; and a support pedestal disposed in a central region of the chamber body fluidly sealed from the processing region;', 'a lower electrode supported by the support pedestal;', 'a first actuation device disposed within the central region and configured to vertically move the lower electrode a distance;', 'a central support member sealed to the chamber body and the lower electrode;', 'a plasma screen supported by the lower electrode and extending along a periphery of the substrate support assembly;', 'an upper liner having an inner wall that maintains an overlap with the plasma screen as the first actuation device moves the lower electrode to protect the substrate support assembly during processing;', 'a plurality of lift pins disposed in the substrate support assembly; and', 'a second actuation device disposed within the central region and configured to vertically move the plurality of lift pins, wherein the plurality of lift pins are coupled to a lift pin plate., 'a substrate support assembly disposed in the chamber body, wherein the substrate support assembly comprises2. The plasma processing apparatus of claim 1 , further comprising a vacuum tube fluidly coupled to one or more lift pin holes disposed within the lower electrode.3. The plasma ...

CORROSION RESISTANT GROUND SHIELD OF PROCESSING CHAMBER

A substrate support assembly includes a ground shield and a heater that is surrounded by the ground shield. The ground shield includes a plate. In one embodiment, the ground shield is composed of a ceramic body and includes an electrically conductive layer, a first protective layer on the upper surface of the plate. In another embodiment, the ground shield is composed of an electrically conductive body and a first protective layer on the upper surface of the plate. 1. A ground shield of a processing chamber , comprising:a ceramic body comprising a plate and a raised edge extending from an upper surface of the plate, wherein a heater fits within the raised edge on the upper surface of the plate;an electrically conductive layer on at least the upper surface of the plate; anda first protective layer on at least the electrically conductive layer.2. The ground shield of claim 1 , further comprising:a second protective layer on the first protective layer, wherein the second protective layer is conformal, has a thickness of approximately 50.00 nm-2.00 mm, and has a porosity of less than 0.1%.3. The ground shield of claim 2 , wherein the second protective layer comprises at least one yttrium oxide claim 2 , erbium oxide claim 2 , tantalum oxide claim 2 , yttrium fluoride claim 2 , alumina claim 2 , aluminum fluoride claim 2 , zirconium dioxide claim 2 , a YO—ZrOsolid solution claim 2 , a material comprising YAlOand a YO—ZrOsolid solution claim 2 , or a combination thereof.4. The ground shield of wherein the raised edge comprises an edge interior wall claim 2 , an edge upper surface and an edge exterior wall claim 2 , and wherein at least one of the electrically conductive layer claim 2 , the first protective layer claim 2 , or the second protective layer further covers at least one of the edge interior wall claim 2 , the edge upper surface or the edge exterior wall.5. The ground shield of claim 4 , further comprising a hollow shaft that extends from a lower surface of the ...

CONTOURED SHOWERHEAD FOR IMPROVED PLASMA SHAPING AND CONTROL

Semiconductor processing chamber showerheads with contoured faceplates, as well as techniques for producing such faceplates, are provided. Data describing deposition rate as a function of gap distance between a reference showerhead faceplate and a reference substrate may be obtained, as well as data describing deposition rate as a function of location on the substrate when the reference showerhead and the reference substrate are in a fixed arrangement with respect to each other. The two data sets may be used to determine offsets from a reference plane associated with the faceplate that determine a contour profile to be used with the faceplate. 1. A showerhead faceplate for use in a semiconductor manufacturing tool , the showerhead faceplate comprising: a plurality of gas distribution holes pass through the circular structure, and', 'the bottom surface is contoured and has a radial profile that varies with respect to normal distance from a reference plane perpendicular to the center axis., 'a substantially circular structure having a bottom surface and a center axis, wherein, when the showerhead faceplate is used in a semiconductor manufacturing process, the bottom surface faces a substrate that is subject to the semiconductor manufacturing process, and wherein2. The showerhead faceplate of claim 1 , the substantially circular structure also having a top surface opposite claim 1 , and substantially parallel to claim 1 , the bottom surface claim 1 , the top surface defining a portion of an internal plenum volume of the showerhead claim 1 , wherein the top surface is contoured in substantially the same manner as the bottom surface such that each of the gas distribution holes has a length substantially equal to the lengths of the other gas distribution holes.3. The showerhead faceplate of claim 1 , wherein the radial profile varies with respect to normal distance from the reference plane by an amount greater than 0.010″ in a region corresponding to the outer 3″ of the ...

METHOD FOR PREPARING HIGH-PERFORMANCE TANTALUM TARGET

A method for preparing a high-performance tantalum target, a high-performance target prepared by the method, and a use of the high-performance target. The method for preparing the high-performance tantalum target comprises: firstly, preparing a tantalum ingot into a forging blank by a method of cold forging in conjunction with hot forging; then, rolling the forging blank by a hot rolling method; and finally, performing leveling, and performing discharging, milling and surface treatment according to a size of a finished product, so as to obtain the tantalum target. The tantalum target prepared by the method has uniform crystallization, with a grain size between 50 μm and 120 μm. A texture component where a texture (110) dominants in the thickness direction of the target is obtained. A total proportion of three textures (111), (110) and (100) is between 40% and 50%, ensuring a consistent sputtering rate of the tantalum target during use. 1. A method for preparing a high-performance tantalum target material , wherein it comprises: first preparing a tantalum ingot into a forged blank by a process of cold forging in combination with hot forging; then rolling by a hot rolling process; and finally leveling , and blanking , cutting and performing surface treatment according to size of a finished product , so as to obtain the tantalum target material.2. The method for preparing a high-performance tantalum target material according to claim 1 , wherein the process of cold forging in combination with hot forging comprises: first performing primary forging to the tantalum ingot by the cold forging claim 1 , performing secondary forging by the hot forging after pickling and heating treatment claim 1 , and then performing tertiary forging by the hot forging process after pickling and heating treatment again.3. The method for preparing a high-performance tantalum target material according to claim 2 , wherein the cold forging process is swaging claim 2 , with a forging ratio ...

DEVICE FOR COATING A SUBSTRATE MADE OF PARTICLES

A device () for coating a substrate made of particles by means of cathode atomisation with a movable substrate dish () tilted relative to the horizontal plane, wherein the substrate dish () is arranged loose in a plate () which is rotatable about an axis of rotation (), is tilted and has a side wall (), wherein an outer wall () of the substrate dish () is intermittently in contact with the inner side () of the side wall () of the plate (). 111-. (canceled)12. A device for coating a substrate of particles by means of cathode sputtering comprising a movable substrate dish tilted relative to a horizontal plane , wherein the substrate dish is loosely arranged in a tilted plate that is rotatable about an axis of rotation and has a side wall , wherein an outer wall of the substrate dish is intermittently in contact with an inner side of the side wall of the plate.13. The device of claim 12 , wherein both the outer wall of the substrate dish and the side wall of the plate are cylinder-shaped with cylinder axes extending in parallel so as to make the substrate dish roll off within the plate at least in sections claim 12 , and the side wall of the plate comprises at least one tappet member for the substrate dish on the inner side.14. The device of claim 13 , wherein the tappet member is formed by a radially inwardly protruding projection having a height that is smaller than a difference between an inner radius of the plate and an outer radius of the substrate dish.15. The device of claim 14 , wherein the height of the projection is between 10 and 20% of the outer radius of the substrate dish.16. The device of claim 13 , wherein the tappet member is radially adjustable.17. The device of claim 13 , wherein the tappet member is formed by a screw passing through the side wall of the plate.18. The device of claim 13 , comprising a plate-to-substrate-dish-diameter ratio of about 13:9.19. The device of claim 12 , wherein the substrate dish is comprised of aluminum.20. The device of ...

CORNER SPOILER FOR IMPROVING PROFILE UNIFORMITY

The present disclosure relates to a corner spoiler designed to decrease high deposition rates on corner regions of substrates by changing the gas flow. In one embodiment, a corner spoiler for a processing chamber includes an L-shaped body fabricated from a dielectric material, wherein the L-shaped body is configured to change plasma distribution at a corner of a substrate in the processing chamber. The L-shaped body includes a first and second leg, wherein the first and second legs meet at an inside corner of the L-shaped body. The length of the first or second leg is twice the distance defined between the first or second leg and the inside corner. In another embodiment, a shadow frame for a depositing chamber includes a rectangular shaped body having a rectangular opening therethrough, and one or more corner spoilers coupled to the rectangular shaped body at corners of the rectangular shaped body. 1. A corner spoiler for a processing chamber , comprising: a first leg; and', 'a second leg, wherein the first and second legs meet at an inside corner and an outside corner of the L-shaped body, and wherein the distance from the end of the first leg to the outside corner is twice the distance from the end of the first leg to the inside corner, and the distance from the end of the second leg to the outside corner is about twice the distance from the end of the second leg to the inside corner., 'an L-shaped body fabricated from a dielectric material, wherein the L-shaped body is positioned to change plasma distribution at a corner of a substrate in the processing chamber, and wherein the L-shaped body comprises2. The corner spoiler of claim 1 , wherein the dielectric material is aluminum oxide.3. The corner spoiler of claim 1 , wherein the dielectric material is polytetrafluoroethylene.4. The corner spoiler of claim 1 , wherein the corner spoiler has a uniform thickness between about 3 mm and about 9 mm.5. The corner spoiler of claim 1 , wherein the distance from the end ...

Method for coating a substrate and coater

A method for coating a substrate by means of a cathode arrangement including at least two rotatable cathodes is disclosed. The method includes rotating at least one of the at least two rotatable cathodes in a first direction, and, at the same time, rotating at least one of the at least two rotatable cathodes in a second direction. The first direction is opposite to the second direction. Furthermore, a controller for controlling a coating process is disclosed. Furthermore, a coater for coating a substrate is disclosed. The coater includes a cathode arrangement with at least two rotatable cathodes and a controller as disclosed herein.

ELECTROSTATIC CHUCK HEATER AND MANUFACTURING METHOD THEREFOR

The present invention relates to an electrostatic chuck heater and a manufacturing method therefor and, more particularly, to an electrostatic chuck heater comprising: a ground electrode; and an electrostatic chuck electrode spaced a predetermined distance apart from the outside of the ground electrode, wherein the heater can reduce the phenomenon of rising of a wafer edge and thus can significantly reduce the temperature deviation according to positions on a heating surface of an object, such as a wafer, so as to increase the temperature uniformity of the heating surface. 1. An electrostatic chuck heater comprising:{'b': '310', 'a ground electrode ; and'}{'b': 320', '310, 'an electrostatic chuck electrode spaced a predetermined distance apart from an outer side of the ground electrode .'}2310320. The electrostatic chuck heater of claim 1 , wherein the ground electrode and the electrostatic chuck electrode are provided on the same plane.3320. The electrostatic chuck heater of claim 1 , wherein the electrostatic chuck electrode is any one of a sheet type and a mesh type.4310320. The electrostatic chuck heater of claim 1 , wherein the ground electrode has a circular plate shape having a diameter of 285 mm claim 1 , and the electrostatic chuck electrode has a ring shape having an inner diameter of 290 mm and an outer diameter of 320 mm.5320. The electrostatic chuck heater of claim 1 , wherein the electrostatic chuck electrode has a thickness of 0.2 mm.6. The electrostatic chuck heater of claim 1 , further comprising:{'b': 325', '320, 'an electrostatic chuck connecting member for supplying electric power to the electrostatic chuck electrode ,'}{'b': '325', 'wherein a material of the electrostatic chuck connecting member is molybdenum (Mo).'}7325. The electrostatic chuck heater of claim 6 , wherein the electrostatic chuck connecting member is any one of a sheet type and a mesh type.8. A method of manufacturing an electrostatic chuck heater claim 6 , the method comprising ...

DEPOSITION RADIAL AND EDGE PROFILE TUNABILITY THROUGH INDEPENDENT CONTROL OF TEOS FLOW

In one embodiment, at least a processing chamber includes a perforated lid, a gas blocker disposed on the perforated lid, and a substrate support disposed below the perforated lid. The gas blocker includes a gas manifold, a central gas channel formed in the gas manifold, a first gas distribution plate comprising an inner and outer trenches surrounding the central gas channel, a first and second gas channels formed in the gas manifold, the first gas channel is in fluid communication with a first gas source and the inner trench, and the second gas channel is in fluid communication with the first gas source and the outer trench, a second gas distribution plate, a third gas distribution plate disposed below the second gas distribution plate, and a plurality of pass-through channels disposed between the second gas distribution plate and the third gas distribution plate. The second gas distribution plate includes a plurality of through holes formed through a bottom of the second gas distribution plate, a central opening in fluid communication with the central gas channel, and a recess region formed in a top surface of the second gas distribution plate, and the recess region surrounds the central opening. 1. A processing chamber for processing a substrate , comprising:a perforated lid; a gas manifold;', 'a central gas channel formed in the gas manifold;', 'a first gas distribution plate disposed below the gas manifold, the first gas distribution plate comprising an inner trench surrounding the central gas channel and an outer trench surrounding the inner trench;', 'a first gas channel formed in the gas manifold, the first gas channel having a first end in fluid communication with a first gas source and a second end in fluid communication with the inner trench;', 'a second gas channel formed in the gas manifold, the second gas channel having a first end in fluid communication with the first gas source and a second end in fluid communication with the outer trench;', a ...

Ionisation device

Ionisation device, comprising a linear hollow cathode device which has hollow cathode electrodes, defining a main hollow cathode electrode gap in which a magnetic field created by means of magnetic elements is confined; and a gas distribution element in which a gas distribution cavity is arranged providing uniform gas distribution on the main hollow cathode electrode gap with suitable powering which in a substantially vacuum environment would be able to produce a substantially linear plasma discharge which is spatially extended by the relative position of the hollow cathode electrodes and an anode element wherein this extended plasma allowing a wide interaction with particles travelling from a coating material source ionised in order to produce a coating or a plasma treatment on a substrate surface.

FEPT-BASED SPUTTERING TARGET

An FePt-based sputtering target has a structure in which an FePt-based alloy phase, a C phase containing unavoidable impurities, and a metal oxide phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities, wherein C is contained in an amount of more than 0 vol % and 20 vol % or less based on the total amount of the target, the metal oxide is contained in an amount of 10 vol % or more and less than 40 vol % based on the total amount of the target, and the total content of C and the metal oxide is 20 vol % or more and 40 vol % or less based on the total amount of the target. 1. An FePt-based sputtering target comprising Fe , Pt , C , and a metal oxide ,wherein the FePt-based sputtering target has a structure in which an FePt-based alloy phase, a C phase containing unavoidable impurities, and a metal oxide phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities, andwherein C is contained in an amount of more than 0 vol % and 20 vol % or less based on a total amount of the target, the metal oxide is contained in an amount of 10 vol % or more and less than 40 vol % based on the total amount of the target, and a total content of C and the metal oxide is 20 vol % or more and 40 vol % or less based on the total amount of the target.2. The FePt-based sputtering target according to claim 1 ,wherein a phase consisting of the C phase and the metal oxide phase has an average size of 0.4 μm or less as determined by an intercept method.31. The FePt-based sputtering target according to claim claim 1 ,{'sub': 2', '2', '2', '3', '2', '5', '2', '3', '3', '4', '2', '3', '2', '3', '2', '2', '3', '2', '3', '2', '2', '5', '3', '2', '2', '3', '2', '3', '2', '3', '2', '2, 'wherein the metal ...

SUBSTRATE SUPPORTS WITH MULTI-LAYER STRUCTURE INCLUDING INDEPENDENT OPERATED HEATER ZONES

A substrate support is provided, is configured to support a substrate in a plasma processing chamber, and includes first, second and third insulative layers, conduits and leads. The first insulative layer includes heater zones arranged in rows and columns. The second insulative layer includes conductive vias. First ends of the conductive vias are connected respectively to the heater zones. Second ends of the conductive vias are connected respectively to power supply lines. The third insulative layer includes power return lines. The conduits extend through the second insulative layer and into the third insulative layer. The leads extend through the conduits and connect to the heater zones. The heater zones are connected to the power return lines by the leads and are configured to heat corresponding portions of the substrate to provide a predetermined temperature profile across the substrate during processing of the substrate in the plasma processing chamber. 1. A substrate support configured to support a substrate in a plasma processing chamber , the substrate support comprising:a first insulative layer comprising a plurality of heater zones, wherein the plurality of heater zones are arranged in rows and columns;a second insulative layer comprising a plurality of conductive vias, wherein first ends of the plurality of conductive vias are connected respectively to the plurality of heater zones, and wherein second ends of the plurality of conductive vias are connected respectively to a plurality of power supply lines;a third insulative layer comprising a plurality of power return lines;a plurality of conduits extending through the second insulative layer and into the third insulative layer; anda plurality of leads extending through the plurality of conduits and connecting to the plurality of heater zones,wherein the plurality of heater zones are connected to the plurality of power return lines by the plurality of leads and are configured to heat corresponding portions ...

HIGH ASPECT RATIO DEPOSITION

Embodiments of the present disclosure generally relate to methods of depositing a conformal layer on surfaces of high aspect ratio structures and related apparatuses for performing these methods. The conformal layers described herein are formed using PECVD methods in which a semiconductor device including a plurality of high aspect ratio features is disposed on a substrate support in a process volume of a process chamber, gases are supplied to the process volume, and a plasma is generated in the process volume by pulsing RF power coupled to the process gases disposed in the process volume of the process chamber. 1. A method of forming a layer on a substrate , comprising:supplying a first gas and a second gas to a process volume of a plasma chamber, wherein a substrate is disposed on a substrate support in the process volume and the substrate includes a plurality of high aspect ratio structures having an aspect ratio of at least 4:1; and the first pulse frequency is from about 1 kHz to about 100 kHz, and', 'the first pulse frequency has a duty cycle from about 10% to about 50%., 'depositing a first portion of a layer by generating a first plasma of the first gas and the second gas within the process volume by energizing an RF power source coupled to the plasma chamber at a first pulse frequency, wherein'}2. The method of claim 1 , wherein the plurality of high aspect ratio structures have an aspect ratio of at least 15:1.3. The method of claim 1 , wherein the first portion of the layer is a dielectric material comprising silicon and a temperature of the process volume during the depositing the first portion is less than 300° C.4. The method of claim 1 , wherein a pressure in the process volume during the depositing the first portion is from about 8 Torr to about 30 Torr.5. The method of claim 1 , wherein the first pulse frequency has a duty cycle from about 20% to about 25%.6. The method of claim 1 , further comprisingsupplying one or more treatment gases to the ...

Process for producing fept-based sputtering target

A process for producing an FePt-based sputtering target includes adding metal oxide powder containing unavoidable impurities to FePt-based alloy powder containing Pt in an amount of 40 at % or more and less than 60 at % and one or more kinds of metal elements other than Fe and Pt in an amount of more than 0 at % and 20 at % or less with the balance being Fe and unavoidable impurities and with a total amount of Pt and the one or more kinds of metal elements being 60 at % or less so that the metal oxide powder accounts for 20 vol % or more and 40 vol % or less of a total amount of the FePt-based alloy powder and the metal oxide powder, followed by mixing the FePt-based alloy powder and the metal oxide powder to produce a powder mixture.

ACTIVE GAS-GENERATING DEVICE AND FILM FORMATION APPARATUS

With respect to a dielectric electrode, gas-jetting holes and gas-jetting holes formed in two rows along the X direction are provided as three or more gas-jetting holes along the X direction in a central region. By providing a difference in the X direction between the position where the gas-jetting hole is formed and the position where the gas-jetting hole is formed, the gas-jetting holes and the gas-jetting holes disposed in two rows are provided such that gas-jetting holes and gas-jetting holes are alternately disposed along the X direction. 1: An active gas-generating device generating an active gas obtained by activating a source gas supplied to a discharge space , the device comprising:a first electrode constituent part; anda second electrode constituent part that is provided below said first electrode constituent part, wherein an AC voltage is applied to said first electrode constituent part and said second electrode constituent part, and by application of said AC voltage, said discharge space is formed between said first electrode constituent part and said second electrode constituent part,wherein said first electrode constituent part includes a first dielectric electrode and a first metal electrode selectively formed on an upper surface of said first dielectric electrode, said second electrode constituent part includes a second dielectric electrode and a second metal electrode selectively formed on a bottom surface of said second dielectric electrode, and by the application of said AC voltage, a region where said first metal electrode and said second metal electrode overlap with each other in plan view is defined as said discharge space, in a dielectric space where said first dielectric electrode and said second dielectric electrode face each other,wherein said second metal electrode includes a pair of second partial metal electrodes formed so as to face each other with a central region of said second dielectric electrode interposed therebetween in plan view ...

PROCESSING APPARATUS AND COLLIMATOR

A processing apparatus according to an embodiment includes a container, a workpiece placement unit, a collimator, and a magnetic field generation unit. The workpiece placement unit on which a workpiece is to be placed so that particles are stacked on the workpiece is provided inside the container. The collimator is provided inside the container, and includes a first surface, a second surface opposite to the first surface, and a through hole penetrating the first surface and the second surface. The magnetic field generation unit is provided inside the container and generates a magnetic field between the first surface and the second surface inside the through hole. 1. A processing apparatus comprising:a container;a workpiece placement unit on which a workpiece is to be placed so that particles are stacked on the workpiece, the workpiece placement unit being provided inside the container;a collimator having a first surface, a second surface opposite to the first surface, and a through hole penetrating the first surface and the second surface, the collimator being provided inside the container; anda magnetic field generation unit configured to generate a magnetic field between the first surface and the second surface inside the through hole, the magnetic field generation unit being provided inside the container.2. The processing apparatus according to claim 1 , wherein the second surface faces the workpiece when the workpiece is placed on the workpiece placement unit.3. The processing apparatus according to claim 1 , wherein the magnetic field is either a magnetic field directed from the second surface side to the first surface side inside the through hole or a magnetic field directed from the first surface side to the second surface side inside the through hole.4. The processing apparatus according to claim 1 , wherein the magnetic field generation unit includes a magnetic body having a magnetization direction extending along a penetrating direction of the through hole ...

METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER WITH WAFER CHUCK HAVING FLUID GUIDING STRUCTURE

A method for processing semiconductor wafer is provided. The method includes loading a semiconductor wafer on a top surface of a wafer chuck. The method also includes supplying a gaseous material between the semiconductor wafer and the top surface of the wafer chuck through a first gas inlet port and a second gas inlet port located underneath a fan-shaped sector of the top surface. The method further includes supplying a fluid medium to a fluid inlet port of the wafer chuck and guiding the fluid medium from the fluid inlet port to flow through a number of arc-shaped channels located underneath the fan-shaped sector of the top surface. In addition, the method includes supplying a plasma gas over the semiconductor wafer. 1. A method for processing a semiconductor wafer , comprising:loading a semiconductor wafer on a top surface of a wafer chuck;supplying a gaseous material between the semiconductor wafer and the top surface of the wafer chuck through a first gas inlet port and a second gas inlet port located underneath a fan-shaped sector of the top surface;supplying a fluid medium to a fluid inlet port of the wafer chuck and guiding the fluid medium from the fluid inlet port to flow through a plurality of arc-shaped channels located underneath the fan-shaped sector of the top surface; andsupplying a plasma gas over the semiconductor wafer.2. The method as claimed in claim 1 , wherein the fluid medium is guided by the arc-shaped channels that are symmetrical about a reference line passing between the first gas inlet port and the second gas inlet port.3. The method as claimed in claim 1 , wherein the fluid medium is guided by the arc-shaped channels that are asymmetrical about a reference line passing between the first gas inlet port and the second gas inlet port;wherein an included angle between the reference line and a boundary of the fan-shaped sector is greater than 30 degrees, as seen from a top view.4. The method as claimed in claim 1 , wherein the fluid medium ...

STORAGE MEDIUM VACUUM SPUTTER TOOL ADJUSTABLE IDLER

A coating apparatus for magnetic data storage disks is operable to transport a disk in a disk holding fixture from a first coating area to a second coating area via roller wheels along a first path. A wheel located along the first path between the first coating area and the second coating area within a sealed enclosure is adjusted such that deflection of the disk holding fixture when traversing the disk transport wheel is reduced, such as by adjusting a leadscrew coupled to the disk holding fixture and a frame of the disk coating apparatus. Adjustment is made with the disk coating apparatus sealed and under vacuum, as the position of the disk transport wheel being adjusted may be different under vacuum than under atmospheric pressure. Adjustment is verified by processing a test disk and measuring forces applied to the test disk during transport through the disk coating apparatus. 1. A method of operating a disk coating apparatus for magnetic data storage disks , comprising:transporting a disk in a disk holding fixture from a first coating area to a second coating area via a plurality of roller wheels along a first path; andadjusting a disk transport wheel located along the first path between the first coating area and the second coating area within a sealed enclosure.2. The method of operating a disk coating apparatus for magnetic data storage disks of claim 1 , wherein adjusting a disk transport wheel comprises adjusting the disk transport wheel such that deflection of the disk holding fixture when traversing the disk transport wheel is reduced relative to an unadjusted position.3. The method of operating a disk coating apparatus for magnetic data storage disks of claim 1 , wherein the disk transport wheel comprises a disk transport drive wheel or a disk transport idler wheel.4. The method of operating a disk coating apparatus for magnetic data storage disks of claim 1 , wherein adjusting a disk transport wheel comprises adjusting a position of the disk transport ...

SHOWERHEAD HAVING AN EXTENDED DETACHABLE GAS DISTRIBUTION PLATE

Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a body having a first side and a second side; a gas distribution plate disposed proximate the second side of the body and having an annular channel formed in a side surface; and a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body, wherein the clamp includes a body and a protrusion extending radially inward into the annular groove, and wherein a portion of the gas distribution plate extends over a bottom surface of the clamp. 1. A showerhead for use in a semiconductor processing chamber , comprising:a body having a first side and an opposing second side;a gas distribution plate disposed proximate the second side of the body and having an annular groove formed in a side surface of the gas distribution plate; anda clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body, wherein the clamp includes a body and a protrusion extending radially inward into the annular groove, and wherein a portion of the gas distribution plate extends over a bottom surface of the clamp.2. The showerhead of claim 1 , wherein the clamp comprises two or more arcuate pieces.3. The showerhead of claim 2 , wherein the clamp comprises two semicircular pieces.4. The showerhead of claim 2 , wherein each arcuate piece of the clamp comprises:a body and a protrusion extending radially inward from the body, wherein the protrusion on each of the arcuate pieces extends into the annular groove of the gas distribution plate.5. The showerhead of claim 4 , wherein the clamp comprises a plurality of pins claim 4 , wherein each pin extends perpendicularly from an upper surface of the protrusion claim 4 , and wherein the gas distribution plate includes a plurality of slots each of which ...

SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

In one embodiment, a semiconductor manufacturing apparatus includes a carrier having first and second ends extending in a first direction, and third and fourth ends extending in a second direction and being not shorter than the first and second ends. The apparatus further includes a member holder having a magnet placement face on which first and second magnetic-pole portions are placed, the magnet placement face having fifth and sixth ends extending in the first direction and being shorter than the first and second ends, and seventh and eighth ends extending in the second direction, being longer than the fifth and sixth ends, and being longer than the third and fourth ends. The apparatus further includes a carrier transporter transporting the carrier along the first direction. The carrier transporter can transport the carrier such that the third and fourth ends pass under a center line of the magnet placement face. 1. A semiconductor manufacturing apparatus comprising:a carrier on which a film formation target is mountable, the carrier having first and second ends extending in a first direction, and third and fourth ends extending in a second direction that is different from the first direction and being not shorter than the first and second ends;a member holder having a magnet placement face on which one or more first magnetic-pole portions having first polarity and one or more second magnetic-pole portions having second polarity that is different from the first polarity are placed, the magnet placement face having fifth and sixth ends extending in the first direction and seventh and eighth ends extending in the second direction and being longer than the fifth and sixth ends, the member holder being configured to hold, in a vicinity of the first and second magnetic-pole portions, a member that is a material for forming a film on the film formation target; anda carrier transporter configured to transport the carrier along the first direction below the member holder, ...

METHOD AND REACTOR DESIGN FOR LARGE-AREA VHF PLASMA PROCESSING WITH IMPROVED UNIFORMITY

An apparatus for plasma processing of substrates is disclosed. A plasma processing chamber is provided which includes a chamber body and a lid. The lid includes a faceplate coupled to a backing plate. The faceplate and the backing plate are disposed within a processing volume defined by the chamber body and the lid. One or more ferrite blocks are coupled to the backing plate to modulate an electromagnetic field created by an RF current from an RF generator. A gas feed assembly including a gas source, a remote plasma source, and a zero field feed through are coupled to, and in fluid communication with, the processing volume through the backing plate and faceplate. 1. A plasma processing chamber , comprising:a chamber body;a lid coupled to the chamber body defining a processing volume;a substrate support disposed within the processing volume;a faceplate coupled to the lid having a plurality of apertures formed therethrough; and a rectangular shaped body having a pair of long sides and a pair of short sides; and', 'a plurality of ferrite blocks disposed on each long side of the rectangular shaped body., 'a backing plate disposed between the faceplate and the lid, the backing plate comprising2. The plasma processing chamber of claim 1 , wherein each of the ferrite blocks has an L-shaped cross section claim 1 , the plurality of ferrite blocks comprises intermittently spaced ferrite blocks defining a space between adjacent blocks.3. The processing chamber of claim 1 , wherein the plurality of ferrite blocks comprises a first group of ferrite blocks interleaved between a second group of ferrite blocks claim 1 , wherein a radially outward surface of the each of ferrite blocks of the second group is positioned between a radially outward surface and a radially inward surface of each of the ferrite blocks of the first group.4. The plasma processing chamber of claim 1 , further comprising:a VHF power generator;one or more VHF feeds coupled to the power generator and the backing ...

DUAL RADIO-FREQUENCY TUNER FOR PROCESS CONTROL OF A PLASMA PROCESS

A tuning apparatus enables control of the flow of radio-frequency (RF) current in a plasma processing chamber at multiple RF frequencies. The apparatus is configured to provide a first path to ground from the chamber for RF power at a first frequency and a second path to ground from the chamber for RF power at a second frequency, where the first path to ground and the second path to ground each include a variable energy storage element. When adjusted, the variable energy storage element in the first path to ground modifies the impedance of the first path to ground, thereby changing RF current flow through the first path to ground at the first frequency. Adjusting the variable energy storage element in the second path to ground modifies the impedance of the second path to ground, thereby changing RF current flow through the second path to ground at the second frequency. 1. An apparatus , comprising:a sensor array configured to measure radio frequency (RF) current that is transmitted via a conductor at a first frequency and RF current that is transmitted via the conductor at a second frequency;a first conductive path that electrically couples the conductor to ground, includes a first adjustable energy storage device, and is configured to have a lower impedance at the first frequency and a higher impedance at the second frequency; anda second conductive path that electrically couples the conductor to ground in parallel with the first conductive path, includes a second adjustable energy storage device, and is configured to have a higher impedance at the first frequency and a lower impedance at the second frequency.2. The apparatus of claim 1 , wherein the sensor array comprises a first voltage-current sensor disposed on the first conductive path and a second voltage-current sensor disposes on the second conductive path.3. The apparatus of claim 1 , wherein the first adjustable energy storage device comprises a variable capacitor or an adjustable inductor claim 1 , and ...

Substrate carrier for a reduced transmission of thermal energy

According to the present disclosure, a semiconductor substrate handling systems and substrate carrier is provided. The substrate carrier for holding a substrate to be processed and for transporting the substrate in or through a processing area with a transport device includes a main portion for holding the substrate; a first end portion adapted to be supported by the transport device; and at least one first intermediate portion connecting the main portion with the first end portion. The at least one first intermediate portion includes one or more cut-outs adapted to reduce thermal energy transfer between the main portion and the first end portion.

ULTRATHIN ATOMIC LAYER DEPOSITION FILM ACCURACY THICKNESS CONTROL

Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature. 1. A method for depositing a silicon oxide film by atomic layer deposition on a semiconductor substrate , the method comprising:(a) inserting a substrate into a chamber;(b) after inserting the substrate into the chamber and prior to performing a first cycle of atomic layer deposition at a deposition temperature, raising the substrate's temperature to about the deposition temperature by exposing the substrate to a soak gas for a duration of about 500 seconds or less; and(c) performing the atomic layer deposition,wherein a cycle of the atomic layer deposition comprisesexposing the substrate to a silicon-containing precursor in a non-plasma environment for a duration sufficient to substantially adsorb the silicon-containing precursor to the surface of the substrate andexposing the substrate to an oxidant in a plasma environment to form at least a portion of the silicon oxide film,wherein soaking the substrate comprises exposing the substrate to a soak gas comprising only one or more gases used when exposing the substrate to the oxidant in the plasma environment during the atomic layer deposition cycle to form the at least a portion of the silicon oxide film, andwherein the thickness of the silicon oxide film deposited by the atomic layer deposition is less than about 5 nm.2. The method of claim 1 , wherein the soak gas in (b) contains only a gas or gases used when exposing the substrate to the oxidant in the plasma environment to form the at least a portion of the silicon oxide film.3. The method of claim 1 , wherein the soak gas in (b) comprises two or more gases claim 1 , and no other gases claim ...

SYMMETRIC PLASMA PROCESS CHAMBER

Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

DEPOSITION SYSTEMS AND METHODS

A system is disclosed, including a processing chamber for a deposition process; a cathode within the chamber, configured to introduce a sputter gas and a reactive gas adjacent to a target; a substrate holder, disposed opposite the cathode within the processing chamber, configured to secure a substrate to receive a deposition from the target; and a control system configured to monitor a target voltage and to control a flow rate of the reactive gas to maintain the target voltage within a desired range during the deposition process. Methods and devices for deposition processes are also disclosed. 1. A system , comprising:a processing chamber for a deposition process;a cathode within the chamber, configured to introduce a sputter gas and a reactive gas adjacent to a target;a substrate holder, disposed opposite the cathode within the processing chamber, configured to secure a substrate to receive a deposition from the target, wherein the substrate holder is electrically isolated from the processing chamber and surrounding shielding of the substrate holder; anda control system configured to monitor a target voltage and to control a flow rate of the reactive gas to maintain the target voltage within a desired range during the deposition process.2. The system of claim 1 , wherein the cathode is configured to hold the target during the deposition process.3. The system of claim 1 , wherein the control system provides closed-loop feedback control.4. The system of claim 1 , wherein the control system controls a partial pressure of the reactive gas in the processing chamber.5. The system of claim 1 , further comprising plates configured to adjust a distance between the target and the substrate.6. The system of claim 1 , wherein the target comprises vanadium claim 1 , the sputter gas comprises argon claim 1 , and the reactive gas comprises oxygen claim 1 , wherein the cathode comprises a magnet claim 1 , and wherein the control system applies a DC pulsed voltage to the cathode.7. ...

Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium

A technology for forming a uniform film in a plane of a substrate involves a substrate processing apparatus including: a substrate support where a substrate is placed; a cover facing at least a portion of the substrate support, the cover including a gas supply channel at a center thereof; a gas supply structure connected to the gas supply channel; a reactive gas supply unit connected to the gas supply structure and including a plasma generating unit; a tube connected to the reactive gas supply unit and extending from the gas supply structure to the gas supply channel; and a gas supply unit connected to the gas supply structure and configured to supply a gas to a space between an outer surface of the tube and an inner surface of the gas supply structure.