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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 13492. Отображено 100.
09-10-2018 дата публикации

Триодная электронная пушка с автокатодом

Номер: RU0000183913U1

Полезная модель относится к электронной технике, а именно к вакуумным электронным приборам, в том числе к СВЧ приборам с протяженным взаимодействием и мгновенным временем готовности, использующие автоэмиссионные катоды. Задачей настоящей полезной модели является создание триодной электронной пушки с автокатодом из нанотрубок, формирующей в зазорах катод-сетка-анод прямолинейные электронные потоки с минимальным угловым разбросом электронов, проходящих без токооседания в пушке. Поставленная задача достигается тем, что в триодной электронной пушке, содержащей автокатод, сетку и анод, согласно заявленному техническому решению используется автокатод с микроячейками из вертикально расположенных нанотрубок, выращенных в отверстиях электрически изолированной сетки от катода. Значения потенциалов сетки V c и анода V a и зазоры катод-сетка d кс и сетка-анод d ca выбираются согласно соотношению: Неравенство справедливо при условии, что для триодных электронных пушек отношение зазора сетка-анод d ca к диаметру анодного отверстия D a должно соответствовать неравенству: при этом влияние анодного отверстия на распределение электрического поля в отверстиях сетки становится пренебрежимо малым. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 183 913 U1 (51) МПК H01J 1/00 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК H01J 37/00 (2006.01) (21)(22) Заявка: 2018117020, 07.05.2018 (24) Дата начала отсчета срока действия патента: 09.10.2018 Приоритет(ы): (22) Дата подачи заявки: 07.05.2018 (45) Опубликовано: 09.10.2018 Бюл. № 28 1 8 3 9 1 3 R U (56) Список документов, цитированных в отчете о поиске: JORNAL of APPL.PHYS., 1968, 39, p.3504. RU 2581833 C1, 20.04.2016. WO 1999016101 A1, 01.04.1999. (54) ТРИОДНАЯ ЭЛЕКТРОННАЯ ПУШКА С АВТОКАТОДОМ (57) Реферат: Полезная модель относится к электронной выращенных в отверстиях электрически технике, а именно к вакуумным электронным изолированной сетки от катода. Значения приборам, в том числе к ...

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24-01-2019 дата публикации

Лазерно-плазменный инжектор ионов с динамической электромагнитной фокусировкой ионного пучка

Номер: RU0000186565U1

Предложен лазерно-плазменный инжектор ионов с динамической электромагнитной фокусировкой ионного пучка, состоящий из: лазера, световое излучение которого, попадая на мишень, образует плазму, дрейфующую в пролетном канале, мишени, пролетного канала, на выходе которого установлен датчик тока для измерения токовых и временных параметров плазмы и ионно-оптической системы (ИОС), на электродах которой существуют неизменяющиеся по величине электрические потенциалы. При этом на выходе ИОС установлена периодическая линзовая система, состоящая из трех расположенных вдоль продольной оси ионного пучка собирающих магнитных линз, выполненных в виде соленоидов с экранами. Первый соленоид, считая от ИОС, электрически подключен к генератору импульсов тока линейно изменяющейся величины, который электрически связан с лазером и датчиком тока. Датчик тока установлен в плазме на выходе пролетного канала и электрически связан с входом генератора импульсов тока линейно изменяющейся величины и установлен на выходе пролетного канала перед ИОС, которая осуществляет отбор ионов из плазмы, формирование и дальнейшее ускорение ионного пучка. Второй соленоид, считая от ИОС, электрически подключен к усилителю тока «У», который электрически связан с тем же датчиком тока. Третий, по счету от ИОС, соленоид установлен на выходе периодической линзовой системы и электрически подключен к отдельному источнику электропитания. Этот соленоид позволяет задавать требуемый угол наклона огибающей ионного пучка после компенсации его углового расхождения, связанного с нестабильностью положения плазменной границы эмиссии ионов. Предложенная конструкция позволяет непрерывно осуществлять поэтапную динамическую фокусировку экстрагированного из лазерной плазмы ионного пучка, обладающего большой кинетической энергией движения, при помощи системы отдельно взятых фокусирующих линз. Жесткость фокусировки в первых двух линзах поставлена в зависимость от скорости движения лазерной плазмы в пролетном канале и от изменения ее ...

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05-04-2012 дата публикации

System and method for removing organic residue from a charged particle beam system

Номер: US20120080056A1
Автор: HONG Xiao
Принадлежит: Hermes Microvision Inc

A system and method for removing an organic residue from a charged particle beam system includes a conduit that is coupled to the column and is for adding oxygen to the column. A heater is coupled to the column and is for increasing the temperature in the column. A pump is coupled to the column and is for removing a gas from the chamber, wherein the gas is a byproduct of a chemical reaction of the organic residue and the oxygen.

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05-04-2012 дата публикации

Grid providing beamlet steering

Номер: US20120080609A1
Автор: Ikuya Kameyama
Принадлежит: Veeco Instruments Inc

A grid assembly coupled to a discharge chamber of an ion beam source is configured for steering ion beamlets emitted from the discharge chamber at circularly asymmetrically determined steering angles. The grid assembly includes at least first and a second grid with a substantially circular pattern of holes, wherein each grid comprises holes positioned adjacent to one another. A plurality of the holes of the second grid is positioned with offsets relative to corresponding holes in the first grid. Due to the offsets in the holes in the second grid, ions passing through the offset holes are electrostatically attracted towards the closest circumferential portion of the downstream offset holes. Thus, the trajectories of ions passing through the offset holes are altered. The beamlet is steered by predetermined asymmetric angles. The predetermined steering angles are dependent upon the hole offsets, voltage applied to the grids, and the distance between the grids.

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24-05-2012 дата публикации

Charged particle beam apparatus and method for stably obtaining charged particle beam image

Номер: US20120126118A1
Принадлежит: Hitachi High Technologies Corp

Since charging characteristics differ between the outer circumferential portion and the center portion of a sample to be inspected, equivalent inspection sensitivities cannot be obtained in the outer circumferential portion and the center portion of the sample to be inspected. A sample cover is provided in the outer circumferential portion of a sample holder on which the sample to be inspected is placed. Charging characteristics of the sample cover are changed according to charging characteristics of the sample to be inspected. Consequently, uniform charged states can be formed in the outer circumferential portion and the center portion of the sample. Inspection/observation of the outer circumferential portion of the sample can be realized at higher sensitivity than in the past.

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31-05-2012 дата публикации

Electron beam generating apparatus

Номер: US20120133281A1
Принадлежит: Academy Industry Foundation of POSTECH

An apparatus for generating an electron beam is disclosed to reduce emittance of an electron beam. The apparatus includes: a housing including a rear portion where an electron beam is generated, a front portion having an electron beam discharge hole for discharging the electron beam to the exterior, and a side portion connecting the rear portion and the front portion, the side portion having a first hole and an opposite side portion, facing the first hole, having a second hole in order to reduce asymmetry of an electric field caused by the first hole; and a waveguide installed on the side portion to supply an electromagnetic wave to the interior of the housing through the first hole, wherein the electron beam is generated by laser incident to the interior of the housing and accelerated by the electromagnetic wave supplied to the interior of the housing.

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07-06-2012 дата публикации

Electron beam column and methods of using same

Номер: US20120138791A1
Принадлежит: KLA Tencor Corp

In one embodiment, a first vacuum chamber of an electron beam column has an opening which is positioned along an optical axis so as to pass a primary electron beam that travels down the column. A source that emits electrons is positioned within the first vacuum chamber. A beam-limiting aperture is configured to pass a limited angular range of the emitted electrons. A magnetic immersion lens is positioned outside of the first vacuum chamber and is configured to immerse the electron source in a magnetic field so as to focus the emitted electrons into the primary electron beam. An objective lens is configured to focus the primary electron beam onto a beam spot on a substrate surface so as to produce scattered electrons from the beam spot. Controllable deflectors are configured to scan the beam spot over an area of the substrate surface. Other features and embodiments are also disclosed.

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14-06-2012 дата публикации

Lithography system and method of refracting

Номер: US20120145915A1
Принадлежит: Mapper Lithopraphy IP BV

A charged particle lithography system for transferring a pattern onto the surface of a target, such as a wafer, comprising a charged particle source adapted for generating a diverging charged particle beam, a converging means for refracting said diverging charged particle beam, the converging means comprising a first electrode, and an aperture array element comprising a plurality of apertures, the aperture array element forming a second electrode, wherein the system is adapted for creating an electric field between the first electrode and the second electrode.

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14-06-2012 дата публикации

Lithography system, modulation device and method of manufacturing a fiber fixation substrate

Номер: US20120145931A1
Принадлежит: Mapper Lithopraphy IP BV

The invention relates to a charged-particle multi-beamlet lithography system for transferring a pattern onto the surface of a target. The system comprises a beam generator for generating a plurality of charged particle beamlets, a beamlet blanker array for patterning the beamlets in accordance with a pattern, and a projection system for projecting the patterned beamlets onto the target surface. The blanker array comprises a plurality of modulators and a plurality of light sensitive elements. The light sensitive elements are arranged to receive pattern data carrying light beams and to convert the light beams into electrical signals. The light sensitive elements are electrically connected to one or more modulators for providing the received pattern data. The blanker array is coupled to a fiber fixation substrate which accommodates end sections of a plurality of fibers for providing pattern data carrying light beams as an assembled group with a fixed connection.

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05-07-2012 дата публикации

Electron-source rod, electron source and electronic device

Номер: US20120169210A1
Автор: Toshiyuki Morishita
Принадлежит: Denki Kagaku Kogyo KK

An electron source is provided that operates at lower temperature and has a low work function and a narrower energy width. The electron source includes a porcelain insulator, two conductive terminals connected to the porcelain insulator, a filament formed between the conductive terminals, and a <100> orientation single crystal rod of at least one metal selected from the group consisting of tungsten, molybdenum, tantalum and rhenium connected to the filament. The rod has an electron-emitting face formed in at its tip region with its {100} crystal face exposed. The rod further includes a diffusion source in its central region that is made of a composite oxide formed from barium oxide and scandium oxide wherein the proportion of barium oxide being 50 mol % or more of BaO and the proportion of scandium oxide being 10 to 50 mol % as Sc 2 O 3 when the mixed oxide is prepared.

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19-07-2012 дата публикации

High-Vacuum Variable Aperture Mechanism And Method Of Using Same

Номер: US20120181444A1
Автор: Mohammed Tahmassebpur
Принадлежит: KLA Tencor Corp

A novel technique is disclosed for varying a size of an aperture within a vacuum chamber. A drive mechanism within the vacuum chamber is used to adjust a partial horizontal overlap between at least two blades, wherein a perimeter of the aperture opening is defined by edges of said blades. In one embodiment, a variable aperture mechanism includes first and second blades attached to a first support, and third and fourth blades attached to a second support. The first blade is spaced vertically above the second blade on the first support; a second support, and the fourth blade is spaced vertically above the third blade on the second support. There is a partial horizontal overlap between the first and third blades and between the fourth and second blades, and the aperture opening has a perimeter defined by edges of the four blades. Other embodiments are also disclosed.

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26-07-2012 дата публикации

Systems and Methods for Control of Multiple Charged Particle Beams

Номер: US20120187306A1
Принадлежит: FPGeneration Inc

The systems and methods described herein relate to the use of electrostatic elements or combinations of electrostatic and magnetic elements to confine charged particles in stable recirculating, trapped orbits. More particularly, the invention relates to systems and methods for acceleration and focusing of multiple charged particle beams having multiple energies and arbitrary polarities along a common axis.

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23-08-2012 дата публикации

Scanning electron microscope

Номер: US20120211654A1
Принадлежит: Hitachi High Technologies Corp

There is provided a scanning electron microscope capable of achieving a size reduction of the device while at the same time suppressing the increase in column temperature as well as maintaining performance, e.g., resolution, etc. With respect to a scanning electron microscope for observing a sample by irradiating the sample with an electron beam emitted from an electron source and focused by condenser lenses, and detecting secondary electrons from the sample, the condenser lenses comprise both an electromagnetic coil-type condenser lens and a permanent magnet-type condenser lens.

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06-09-2012 дата публикации

Electron beam source system and method

Номер: US20120223245A1
Принадлежит: Individual

An embodiment includes an electron beam source system having a first electron beam source unit with a substrate having a substrate-top end and a substrate-bottom end; and a first lens coupled to the substrate-bottom end defining a first aperture and having a lens-top end and a lens-bottom end. Further embodiments comprise an electron-emission region at the substrate-bottom end and aligned with the first aperture, the electron-emission region being operable to emit one or more electrons due to one or more photons contacting the electron-emission region, which may include passing through the substrate and into the electron-emission region, wherein the electron-emission region comprises a first doped portion of the substrate.

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20-09-2012 дата публикации

Method for extending lifetime of an ion source

Номер: US20120235058A1
Принадлежит: Praxair Technology Inc

This invention relates in part to a method for preventing or reducing the formation and/or accumulation of deposits in an ion source component of an ion implanter used in semiconductor and microelectronic manufacturing. The ion source component includes an ionization chamber and one or more components contained within the ionization chamber. The method involves introducing into the ionization chamber a dopant gas, wherein the dopant gas has a composition sufficient to prevent or reduce the formation of fluorine ions/radicals during ionization. The dopant gas is then ionized under conditions sufficient to prevent or reduce the formation and/or accumulation of deposits on the interior of the ionization chamber and/or on the one or more components contained within the ionization chamber. The deposits adversely impact the normal operation of the ion implanter causing frequent down time and reducing tool utilization.

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04-10-2012 дата публикации

Ion implantation system and method

Номер: US20120252195A1
Принадлежит: Advanced Technology Materials Inc

An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.

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11-10-2012 дата публикации

E-Beam Enhanced Decoupled Source for Semiconductor Processing

Номер: US20120258601A1
Принадлежит: Lam Research Corp

A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electrode disposed within the processing chamber separate from the substrate support. The system also includes a power supply electrically connected to the electrode. The power supply is defined to supply electrical power to the electrode so as to liberate electrons from the electrode into the processing chamber.

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18-10-2012 дата публикации

Oxidative cleaning method and apparatus for electron microscopes using uv excitation in an oxygen radical source

Номер: US20120260936A1
Автор: Ronald A. Vane
Принадлежит: Vane Ronald A

An improved method and apparatus for the production of oxygen radicals that may be used for cleaning portions high vacuum instruments. The apparatus comprises a VUV vacuum ultraviolet light source or lamp placed in an irradiation chamber for the photo disassociation of oxygen in communication with the main chamber on a specimen chamber port or inside the specimen chamber. Air or other oxygen-containing gas is admitted to the irradiation chamber for photo disassociation. The VUV source radiates UV wavelengths below 193 nm that are used to disassociate oxygen in the gas to create the oxygen radicals and the pressure is held high enough for complete absorption of the light. The oxygen radicals are differentially pumped into main chamber at pressure below 100 milliTorr to prevent recombination to clean hydrocarbons from the surfaces instrument by oxidation to volatile oxide gases. The oxide gases are then removed by the vacuum pump.

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18-10-2012 дата публикации

Encapsulation of Electrodes in Solid Media for use in conjunction with Fluid High Voltage Isolation

Номер: US20120261587A1
Принадлежит: FEI Co

An inductively-coupled plasma source for a focused charged particle beam system includes a conductive shield that provides improved electrical isolation and reduced capacitive RF coupling and a dielectric fluid that insulates and cools the plasma chamber. The conductive shield may be enclosed in a solid dielectric media. The dielectric fluid may be circulated by a pump or not circulated by a pump. A heat tube can be used to cool the dielectric fluid.

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15-11-2012 дата публикации

Scanning electron microscope and inspection method using same

Номер: US20120286158A1
Принадлежит: Hitachi High Technologies Corp

Provided is a high-resolution scanning electron microscope with minimal aberration, and equipped with an electro-optical configuration that can form a tilted beam having wide-angle polarization and a desired angle, without interfering with an electromagnetic lens. In the scanning electron microscope, an electromagnetic deflector ( 201 ) is disposed above a magnetic lens ( 207 ), and a control electrode ( 202 ) that accelerates or decelerates electrons is provided so at to overlap (in such a manner that the height positions overlap with respect to the vertical direction) with the electromagnetic deflector ( 201 ). In wide field polarization, electrodes are accelerated, and in tilted beam formation, electrons are decelerated.

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22-11-2012 дата публикации

Charged particle beam writing apparatus and method of same

Номер: US20120292537A1
Автор: Akihito Anpo, Jun Yashima
Принадлежит: Nuflare Technology Inc

A charged particle beam writing apparatus, includes a unit to input information about a stripe region height, and to judge, when a write region is divided into stripe regions in a thin rectangular shape by the stripe region height, whether a height of a last stripe region is narrower than the stripe region height; and a unit to divide the write region into stripe regions in the thin rectangular shape in such a way that the last stripe region and a stripe region prior to the last stripe region are combined to create one stripe region and stripe regions at least two stripe regions prior to the last stripe region are each created as stripe regions of the stripe region height if the height of the last stripe region is narrower than the stripe region height.

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03-01-2013 дата публикации

System and method for producing a mass analyzed ion beam for high throughput operation

Номер: US20130001414A1

A system for producing a mass analyzed ion beam for implanting into a workpiece, includes an extraction plate having a set of apertures having a longitudinal axis of the aperture. The set of apertures are configured to extract ions from an ion source to form a plurality of beamlets. The system also includes an analyzing magnet region configured to provide a magnetic field to deflect ions in the beamlets in a first direction that is generally perpendicular to the longitudinal axis of the apertures. The system further includes a mass analysis plate having a set of apertures configured to transmit first ion species having a first mass/charge ratio and to block second ion species having a second mass/charge ratio and a workpiece holder configured to move with respect to the mass analysis plate along the first direction.

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21-02-2013 дата публикации

System for magnetic shielding

Номер: US20130043414A1
Автор: Alon Rosenthal
Принадлежит: Mapper Lithopraphy IP BV

The invention relates to a system for magnetically shielding a charged particle lithography apparatus. The system comprises a first chamber, a second chamber and a set of two coils. The first chamber has walls comprising a magnetic shielding material, and, at least partially, encloses the charged particle lithography apparatus. The second chamber also has walls comprising a magnetic shielding material, and encloses the first chamber. The set of two coils is disposed in the second chamber on opposing sides of the first chamber. The two coils have a common axis.

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04-04-2013 дата публикации

Transformer-coupled rf source for plasma processing tool

Номер: US20130082599A1
Автор: Kamal Hadidi, Rajesh Dorai

A RF source and method are disclosed which inductively create a plasma within an enclosure without an electric field or with a significantly decreased creation of an electric field. A ferrite material with an insulated wire wrapped around its body is used to efficiently channel the magnetic field through the legs of the ferrite. This magnetic field, which flows between the legs of the ferrite can then be used to create and maintain a plasma. In one embodiment, these legs rest on a dielectric window, such that the magnetic field passes into the chamber. In another embodiment, the legs of the ferrite extend into the processing chamber, thereby further extending the magnetic field into the chamber. This ferrite can be used in conjunction with a PLAD chamber, or an ion source for a traditional beam line ion implantation system.

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11-04-2013 дата публикации

Electron microscope

Номер: US20130087703A1
Принадлежит: Hitachi High Technologies Corp

In an electron microscope having a magnetic field immersion type cold-FE electron gun, the electron gun and the electron microscope are provided with high observation efficiency and the focal distance of the electron gun does not change during use. The degree of vacuum in the electron gun is improved with a getter pump for stabilization. Further, observation efficiency is improved by cleaning the electron source periodically and returning to recorded optical conditions on the occasion.

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09-05-2013 дата публикации

Particle sources and methods for manufacturing the same

Номер: US20130112138A1
Автор: Huarong LIU
Принадлежит: CETC 38 Research Institute

The present disclosure provides a method for manufacturing a particle source, comprising: placing a metal wire in vacuum, introducing active gas and catalyst gas, adjusting a temperature of the metal wire, and applying a positive high voltage V to the metal wire to dissociate the active gas at the surface of the metal wire, in order to generate at a peripheral surface of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the top of the metal wire head to be greater than the to evaporation field of the material for the metal wire, so that metal atoms at the wire apex are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.

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09-05-2013 дата публикации

Wien filter

Номер: US20130112889A1
Принадлежит: Hermes Microvision Inc

This invention provides a multi-pole type Wien filter, which acts more purely approaching its fundamentally expected performance. A 12-electrode electric device acts as an electric deflector,or acts as an electric deflector and an electric stigmator together. A cylindrical 4-coil magnetic device with a magnetic core acts as a magnetic deflector. Both can produce a dipole field while only incurring a negligibly-small 3rd order field harmonic. The magnetic core enhances the strength and more preciously regulates the distribution of the magnetic field originally generated by the coils. Then two ways to construct a Wien filter are proposed. One way is based on both of the foregoing electric and magnetic devices, and the other way is based on the foregoing electric device and a conventional magnetic deflector. The astigmatism in each of such Wien filters can be compensated by the electric stigmator of the electric device.

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16-05-2013 дата публикации

Fabrication of super ion - electron source and nanoprobe by local electron bombardment

Номер: US20130122774A1
Автор: Moh&#39;d Rezeq

Method of fabricating super nano ion-electron source including: placing an assembly of precursor tip and metal ring around the precursor tip below the apex in a FIM chamber; applying dc current from grounded source to the metal ring to heat the ring; gradually applying high voltage to the precursor tip; wherein the metal ring is exposed to a high electric field from the tip, generating Schottky field emission of electrons from the metal ring, the applied electrical field sufficient to cause electrons to be extracted from the metal ring and accelerated to the shank with energy sufficient to dislodge atoms from the shank; and monitoring the evolution of the tip apex due to movement of dislodged atoms from the shank to the apex while adjusting the electrical field, the current or temperature of the metal ring until the apex forms a sharp nanotip with an atomic scale apex.

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30-05-2013 дата публикации

Target for generating carbon ions and treatment apparatus using the same

Номер: US20130138184A1

Provided are a carbon ion generation target and a treatment apparatus including the same. The treatment apparatus includes a support member, a carbon ion generation target fixed to the support member, and a laser for irradiating laser beam into the carbon ion generation target to generate carbon ions from the carbon ion generation target, thereby projecting the carbon ions onto a tumor portion of a patient. Here, the carbon ion generation target includes a substrate and carbon thin films disposed on the substrate.

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06-06-2013 дата публикации

Automatic Control System for Selection and Optimization of Co-Gas Flow Levels

Номер: US20130140473A1
Принадлежит: Axcelis Technologies Inc

An ion implantation system for improving performance and extending lifetime of an ion source is disclosed whereby the selection, delivery, optimization and control of the flow rate of a co-gas into an ion source chamber is automatically controlled.

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18-07-2013 дата публикации

SWITCHABLE GAS CLUSTER AND ATOMIC ION GUN, AND METHOD OF SURFACE PROCESSING USING THE GUN

Номер: US20130180844A1
Автор: BARNARD Bryan
Принадлежит:

A method of processing one or more surfaces is provided, comprising: providing a switchable ion gun which is switchable between a cluster mode setting for producing an ion beam substantially comprising ionised gas clusters for irradiating a surface and an atomic mode setting for producing an ion beam substantially comprising ionised gas atoms for irradiating a surface; and selectively operating the ion gun in the cluster mode by mass selecting ionised gas clusters using a variable mass selector thereby irradiating a surface substantially with ionised gas clusters or the atomic mode by mass selecting ionised gas atoms using a variable mass selector thereby irradiating a surface substantially with ionised gas atoms. Also provided is a switchable ion gun comprising: a gas expansion nozzle for producing gas clusters; an ionisation chamber for ionising the gas clusters and gas atoms; and a variable (preferably a magnetic sector) mass selector for mass selecting the ionised gas clusters and ionised gas atoms to produce an ion beam variable between substantially comprising ionised gas clusters and substantially comprising ionised gas atoms. Preferably, the gun comprises an electrically floating flight tube for adjusting the energy of the ions whilst within the mass selector. 1. A method of processing one or more surfaces , the method of processing comprising:providing a switchable ion gun which is switchable between a cluster mode setting for producing an ion beam substantially comprising ionised gas clusters for irradiating a surface and an atomic mode setting for producing an ion beam substantially comprising ionised gas atoms for irradiating a surface; andselectively operating the ion gun in the cluster mode by mass selecting ionised gas clusters using a variable mass selector thereby irradiating a surface substantially with ionised gas clusters, or in the atomic mode by mass selecting ionised gas atoms using the variable mass selector thereby irradiating a surface ...

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25-07-2013 дата публикации

Particle-Optical Systems and Arrangements and Particle-Optical Components for such Systems and Arrangements

Номер: US20130187046A1
Принадлежит:

The present invention concerns a charged-particle multi-beamlet system that comprises a source of charged particles (); a first multi-aperture plate () having plural apertures disposed in a charged particle beam path of the system down-stream of the source; a first multi-aperture selector plate () having plural apertures; a carrier (), wherein the first multi-aperture selector plate is mounted on the carrier; and an actuator () configured to move the carrier such that the first multi-aperture selector plate is disposed in the charged particle beam path of the system downstream of the source in a first mode of operation of the system, and such that the first multi-aperture selector plate is disposed outside of the charged particle beam path in a second mode of operation of the system. The source, the first multi-aperture plate and the carrier of the system are arranged such that a first number of charged particle beamlets is generated at a position downstream of both the first multi-aperture plate and the first multi-aperture selector plate in the first mode of operation, and that a second number of charged particle beamlets is generated at the position in the second mode of operation, wherein the first number of beamlets differs from the second number of beamlets. 126.-. (canceled)27. A charged-particle multi-beamlet system comprising:a source of charged particles;a first multi-aperture plate having plural apertures disposed in a charged particle beam path of the system downstream of the source;a first multi-aperture selector plate having plural apertures;a carrier, wherein the first multi-aperture selector plate is mounted on the carrier;an actuator configured to move the carrier such that the first multi-aperture selector plate is disposed in the charged particle beam path of the system downstream of the source in a first mode of operation of the system, and such that the first multi-aperture selector plate is disposed outside of the charged particle beam path in ...

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25-07-2013 дата публикации

Photocathode high-frequency electron-gun cavity apparatus

Номер: US20130187541A1

A photocathode high-frequency electron-gun cavity apparatus of the present invention is provided with a high-frequency acceleration cavity ( 1 ), a photocathode ( 8, 15 ), a laser entering port ( 9 ), a high-frequency power input coupler port ( 10 ), and a high-frequency resonant tuner ( 16 ). Here, the apparatus adopts an ultra-small high-frequency accelerator cavity which contains a cavity cell formed only with a smooth and curved surface at an inner face thereof without having a sharp angle part for preventing discharging, obtaining higher strength of high-frequency electric field, and improving high-frequency resonance stability. Further, the photocathode is arranged at an end part of a half cell ( 5 ) of the high-frequency acceleration cavity for maximizing electric field strength at the photocathode face, perpendicular incidence of laser is ensured by arranging a laser entering port at a position facing to the photocathode behind an electron beam extraction port of the high-frequency acceleration cavity for maximizing quality of short-bunch photoelectrons, and a high-frequency power input coupler port is arranged at a side part of the cell of the high-frequency acceleration cavity for enhancing high-frequency electric field strength. According to the above, it is possible to provide a small photocathode high-frequency electron-gun cavity apparatus capable of generating a high-strength and high-quality electron beam.

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25-07-2013 дата публикации

Apparatus and Method for Removal of Surface Oxides Via Fluxless Technique Involving Electron Attachment

Номер: US20130187547A1
Принадлежит: AIR PRODUCTS AND CHEMICALS, INC.

Described herein is a method and apparatus for removing metal oxides on a surface of a component via electron attachment. In one embodiment, there is provided a field emission apparatus, wherein the electrons attach to at least a portion of the reducing gas to form a negatively charged atomic ions which removes metal oxides comprising: a cathode comprising an electrically conductive and comprising at least one or more protrusions having an angled edge or high curvature surface, wherein the cathode is surrounded by a dielectric material which is then surrounded by an electrically conductive anode wherein the cathode and anode are each connected to an electrical voltage source, and the dielectric material between the cathode and anode is polarized, intensifying the electrical field strength and accumulating electrons at the apex of the cathode to promote field emission of electrons from the cathode. 1. An apparatus for emitting electrons in an ambient pressure condition , the apparatus comprising:a cathode having an angled edge and comprised of a conductive material wherein the material has a work function ranging from 2 to 5 eV;a dielectric material which surrounds at least a portion of the cathode; andan anode comprised of a conductive material which surrounds at least a portion of the dielectric material,wherein the cathode and anode are each connected to an electrical voltage source, andwherein the dielectric material between the cathode and anode is polarized to provide an intensified electric field and to accumulate electrons at the edge of the cathode and thereby generate electrons from the cathode.2. The apparatus of claim 1 , wherein the cathode and anode act as a capacitor claim 1 , and the dielectric material is sufficiently thin to allow electron accumulation at the cathode.4. The apparatus of claim 3 , wherein the reducing gas comprises H.5. The apparatus of claim 4 , wherein the concentration of Hin the reducing gas is from 0.1 to 100 volume %.6. The ...

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01-08-2013 дата публикации

Methods, devices, and systems for manipulating charged particle streams

Номер: US20130193341A1

A multiple-deflection blanker for charged particle beam lithography includes a support structure, a first pair of electrodes mounted to the support structure and providing a first electric field, a second pair of electrodes mounted to the support structure and providing a second electric field, at least a third pair of electrodes mounted to the support structure and providing a third electric field, and a surface, such as, an aperture or knife edge, positioned to obstruct a charged particle beam passed through the electric fields. The blanker may include at least a fourth pair of electrodes providing a fourth electric field and apparatus for regulating the time of the excitation of the electric fields. Methods for exposing media to charged particles and aperture holders are also provided.

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15-08-2013 дата публикации

Transmission Electron Microscope

Номер: US20130206987A1
Автор: Omoto Kazuya
Принадлежит: JEOL LTD.

A transmission electron microscope () includes an electron beam source (), an illumination lens (), an objective lens (), an intermediate lens system (), a pair of transfer lenses () located behind the intermediate lens system (), and an energy filter () for separating the electrons of the beam L transmitted through the specimen (S) according to energy. The transfer lenses () transfer the first image to the entrance crossover plane (S) of the energy filter () and to transfer the second image to the entrance image plane (A) of the filter (). An image plane (A) is formed between the first transfer lens () and the second transfer lens (). 1. A transmission electron microscope comprising:an electron beam source producing an electron beam;an illumination lens via which the electron beam from the electron beam source is directed at a specimen;an objective lens for forming a focused first image from the electron beam transmitted through the specimen;an intermediate lens system for forming a focused second image from the electron beam transmitted through the specimen;a pair of transfer lenses disposed behind the intermediate lens system, the pair of transfer lenses being made up of a first transfer lens and a second transfer lens; andan energy filter for separating the electrons of the electron beam transmitted through the specimen according to energy,wherein the transfer lenses act to transfer the first image to an entrance crossover plane of the energy filter and to transfer the second image to an entrance image plane of the energy filter; andwherein an image plane is formed between the first transfer lens and the second transfer lens of the pair of transfer lenses.2. A transmission electron microscope as set forth in claim 1 , wherein a detector for detecting electrons scattered by the specimen is disposed at said image plane between said first and second transfer lenses.3. A transmission electron microscope as set forth in claim 1 , wherein an entrance aperture for ...

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22-08-2013 дата публикации

Liquid metal ion source and secondary ion mass spectrometric method and use thereof

Номер: US20130216427A1
Принадлежит: ION TOF Tech GmbH

A liquid metal ion source for use in an ion mass spectrometric analysis method contains, on the one hand, a first metal with an atomic weight ≧190 U and, on the other hand, another metal with an atomic weight ≦90 U. One of the two types of ions are filtered out alternately from the primary ion beam and directed onto the target as a mass-pure primary ion beam.

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22-08-2013 дата публикации

Electron beam writing apparatus and electron beam writing method

Номер: US20130216953A1
Принадлежит: Nuflare Technology Inc

An electron beam writing apparatus comprising a stage that a sample is placed on, an electron optical column, an electron gun emitting an electron beam disposed in the optical column, an electrostatic lens provided with electrodes aligned in an axial direction of the electron beam disposed in the optical column, and a voltage supply device for applying positive voltage constantly to the electrostatic lens. A shield plate is disposed between the XY stage and the electron optical column to block reflected electrons or secondary electrons generated by irradiation to the sample with the electron beam. The electrostatic lens is disposed immediately above the shield plate to change a focal position of the electron beam. A voltage supply device applies a positive voltage constantly to the electrostatic lens.

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05-09-2013 дата публикации

METHOD AND APPARATUS FOR A POROUS ELECTROSPRAY EMITTER

Номер: US20130228700A1
Принадлежит: Massachusetts Institute of Technology

An ionic liquid ion source can include a microfabricated body including a base and a tip. The body can be formed of a porous material compatible with at least one of an ionic liquid or room-temperature molten salt. The body can have a pore size gradient that decreases from the base of the body to the tip of the body, such that the at least one of an ionic liquid or room-temperature molten salt is capable of being transported through capillarity from the base to the tip. 1. An ionic liquid ion source comprising:a body comprising a base and a tip and formed of a porous material compatible with at least one of an ionic liquid or room-temperature molten salt; andthe body having a pore size gradient that decreases from the base of the body to the tip of the body, such that the at least one of an ionic liquid or room-temperature molten salt is capable of being transported through capillarity from the base to the tip.2. The ionic liquid ion source of wherein the at least one of an ionic liquid or room-temperature molten salt is capable of being continuously transported through capillarity from the base to the tip.3. The ionic liquid ion source of wherein the body is a cylindrical needle.4. The ionic liquid ion source of wherein the body is a flat ribbon-like needle.5. The ionic liquid ion source of wherein the tip is formed by at least one of chemical wet etching claim 1 , plasma dry etching claim 1 , ion beam milling claim 1 , laser milling claim 1 , chemical vapor deposition claim 1 , physical vapor deposition claim 1 , or nano-bead deposition.6. The ionic liquid ion source of wherein the porous material comprises a dielectric material.7. The ionic liquid ion source of wherein the dielectric material comprises at least one of a ceramic material claim 6 , a glass material or other oxide material.8. The ionic liquid ion source of wherein a radius of curvature of the tip is approximately 1-20 μm.9. An ionic liquid ion source comprising:a plurality of emitters formed of a ...

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26-09-2013 дата публикации

Multiple Gas Injection System

Номер: US20130248490A1
Принадлежит: FEI Co

A multi-positional valve is used to control the destination of gas flows from multiple gas sources. In one valve position the gases flow to an isolated vacuum system where the flow rate and mixture can be adjusted prior to introduction into a sample vacuum chamber. In another valve position the pre-mixed gases flow from the isolated vacuum chamber and through a needle into the sample vacuum chamber.

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26-09-2013 дата публикации

Method of Adjusting Transmission Electron Microscope

Номер: US20130248699A1
Автор: MUKAI Masaki
Принадлежит: JEOL LTD.

There is provided a method of adjusting a transmission electron microscope to facilitate an adjustment for bringing a focal plane of an electron beam exiting a two-stage filter type monochromator into coincidence with an achromatic plane. The method starts with obtaining a transmission electron microscope image including interference fringes of the electron beam that are generated by an aperture located behind the monochromator. The focal plane of the beam exiting the monochromator is brought into coincidence with the achromatic plane by adjusting the intensity of an electrostatic lens, the intensities of the electric and magnetic fields produced by at least one of two energy filters, or astigmatism generated in the monochromator based on an intensity distribution of the interference fringes in the obtained transmission electron microscope image. 1. A method of adjusting a transmission electron microscope equipped with a monochromator that monochromatizes an electron beam , the monochromator including a first energy filter for dispersing the electron beam according to kinetic energy , an energy selecting slit disposed at an energy dispersive plane , and a second energy filter for nullifying energy dispersion of the electron beam transmitted through the energy selecting slit , said method comprising:obtaining a transmission electron microscope image including interference fringes of the electron beam produced by an aperture located behind the monochromator; andmaking an adjustment for bringing a focal plane of the electron beam exiting the monochromator into coincidence with an achromatic plane based on an intensity distribution of the interference fringes in the transmission electron microscope image.2. A method of adjusting a transmission electron microscope as set forth in claim 1 , wherein said step of making an adjustment is carried out by adjusting the intensity of an electrostatic lens mounted ahead of the monochromator based on the intensity distribution of ...

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26-09-2013 дата публикации

DEFECT INSPECTION APPARATUS AND DEFECT INSPECTION METHOD

Номер: US20130248705A1
Автор: Hayashi Hiroyuki
Принадлежит: KABUSHIKI KAISHA TOSHIBA

In accordance with an embodiment, a defect inspection apparatus includes a charged beam irradiation unit, a detection unit, an energy filter, and an inspection unit. The charged beam irradiation unit generates a charged beam and irradiates a sample including a pattern as an inspection target thereon with the generated charged beam. The detection unit detects secondary charged particles or reflected charged particles generated from the sample by irradiation of the charged beam and outputs a signal. The energy filter is arranged between the detection unit and the sample to selectively allow the secondary charged particles or the reflected charged particles with energy associated with an applied voltage to pass therethrough. The inspection unit applies voltages different from each other to the energy filter and outputs information concerning a defect of the pattern from an intensity difference between signals obtained under application voltage different from each other. 1. A defect inspection apparatus comprising:a charged beam irradiation unit configured to generate a charged beam and irradiate a sample comprising a pattern as an inspection target thereon with the generated charged beam;a detection unit configured to detect secondary charged particles or reflected charged particles generated from the sample by irradiation of the charged beam and to output a signal;an energy filter located between the detection unit and the sample, the energy filter being configured to selectively allow the secondary charged particles or the reflected charged particles with energy associated with an applied voltage to pass therethrough; andan inspection unit configured to apply voltages different from each other to the energy filter and output information concerning a defect of the pattern from an intensity difference between signals obtained under application voltage different from each other.2. The apparatus of claim 1 ,wherein a plurality of pairs of the energy filter and the ...

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26-09-2013 дата публикации

Method and Apparatus for Actively Monitoring an Inductively-Coupled Plasma Ion Source using an Optical Spectrometer

Номер: US20130250293A1
Принадлежит: FEI Co

A method and apparatus for actively monitoring conditions of a plasma source for adjustment and control of the source and to detect the presence of unwanted contaminant species in a plasma reaction chamber. Preferred embodiments include a spectrometer used to quantify components of the plasma. A system controller is provided that uses feedback loops based on spectral analysis of the plasma to regulate the ion composition of the plasma source. The system also provides endpointing means based on spectral analysis to determine when cleaning of the plasma source is completed.

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03-10-2013 дата публикации

TARGET FOR GENERATING ION AND TREATMENT APPARATUS USING THE SAME

Номер: US20130261369A1

Provided are an ion generation target and a treatment apparatus using the same. The treatment apparatus includes an ion generation material generating the ions by incident laser beam, the ion generation material generating a bubble having a hemispheric shape, a support supporting the bubble having the hemispheric shape, a bubble generation member for generating the bubble having the hemispheric shape on the support by using the ion generation material, and a laser radiating laser beam onto a surface of the bubble to generate ions from the ion generation material, thereby projecting the ions onto a tumor portion of a patient. 1. An ion generation target comprising:an ion generation material generating the ions by incident laser beam, the ion generation material generating a bubble having a hemispheric shape; anda support supporting the bubble having the hemispheric shape.2. The ion generation target of claim 1 , wherein the ions are protons or carbon ions.3. The ion generation target of claim 2 , wherein the ions are the protons claim 2 , and the ion generation material is water.4. The ion generation target of claim 2 , wherein the ions are the carbon ions claim 2 , and the ion generation material is oil containing a carbon component.5. The ion generation target of claim 1 , wherein the support is a transparent substrate or a ring type bubble support.6. The ion generation target of claim 1 , wherein a thickness of a membrane of the bubble is adjusted by viscosity of the ion generation material.7. The ion generation target of claim 1 , wherein the ion generation material further comprises graphene powder or graphite powder.8. An ion beam treatment apparatus comprising:an ion generation target comprising an ion generation material generating the ions by incident laser beam, the ion generation material generating a bubble having a hemispheric shape and a support supporting the bubble having the hemispheric shape;a bubble generation member for generating the bubble ...

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10-10-2013 дата публикации

System and method of ion neutralization with multiple-zoned plasma flood gun

Номер: US20130264498A1

An apparatus comprises a plasma flood gun for neutralizing a positive charge buildup on a semiconductor wafer during a process of ion implantation using an ion beam. The plasma flood gun comprises more than two arc chambers, wherein each arc chamber is configured to generate and release electrons into the ion beam in a respective zone adjacent to the semiconductor wafer.

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17-10-2013 дата публикации

ELECTRON BEAM DEVICE

Номер: US20130270435A1
Принадлежит: HITACHI HIGH-TECHNOLOGIES CORPORATION

The electron beam device includes a source of electrons and an objective deflector. The electron beam device obtains an image on the basis of signals of secondary electrons, etc. which are emitted from a material by an electron beam being projected. The electron beam device further includes a bias chromatic aberration correction element, further including an electromagnetic deflector which is positioned closer to the source of the electrons than the objective deflector, and an electrostatic deflector which has a narrower interior diameter than the electromagnetic deflector, is positioned within the electromagnetic deflector such that the height-wise position from the material overlaps with the electromagnetic deflector, and is capable of applying an offset voltage. It is thus possible to provide an electron beam device with which it is possible to alleviate geometric aberration (parasitic aberration) caused by deflection and implement deflection over a wide field of view with high resolution. 1. An electron beam device which includes an electron source and a deflector which defines a position of an electron beam emitted from the electron source on a sample and obtains an image of the sample based on a secondary electronic signal which is generated from the sample by irradiating the electron beam whose position is defined by the deflector , or a signal of a reflection signal electron or an absorbed electron , the electron beam device further comprising:a deflected chromatic aberration correcting element including an electromagnetic deflector which is disposed to be closer to the electron source than the deflector with respect to the sample and an electrostatic deflector which is separated from the electromagnetic deflector and has a smaller inner diameter than the electromagnetic deflector, is disposed inside such that a height position from the sample overlaps the electromagnetic deflector and applies an offset voltage.2. The electron beam device according to claim ...

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24-10-2013 дата публикации

Melting furnace including wire-discharge ion plasma electron emitter

Номер: US20130279533A1
Принадлежит: ATI Properties LLC

An apparatus for melting an electrically conductive metallic material includes a vacuum chamber and a hearth disposed in the vacuum chamber. At least one wire-discharge ion plasma electron emitter is disposed in or adjacent the vacuum chamber and is positioned to direct a wide-area field of electrons into the vacuum chamber, wherein the wide-area electron field has sufficient energy to heat the electrically conductive metallic material to its melting temperature. The apparatus may further include at least one of a mold and an atomizing apparatus which is in communication with the vacuum chamber and is positioned to receive molten material from the hearth.

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31-10-2013 дата публикации

ION TRANSFER DEVICE

Номер: US20130284916A1
Автор: Sato Tomoyoshi
Принадлежит: ATONARP INC.

There is provided a transfer device () that transfers ionized substances in a first direction. The transfer device () includes a drift tube () and the drift tube () includes electrode plates () and () constructing an outer wall and a plurality of ring electrodes () disposed inside the tube. The ring electrodes () forms a first AC electric field for linear driving that causes the ionized substances to travel in the first direction that is the axial direction. The electrode plates () and () form an asymmetric second AC electric field that deflects the direction of travel of the ionized substances. 115-. (canceled)16. A transfer device that transfers ionized substances in a first direction , comprising:a plurality of ring-shaped first electrodes disposed in a line in the first direction, regularly reverse a direction of electric fields formed between at least some adjacent electrodes out of the plurality of first electrodes, and form a plurality of first alternating current electric field for linear driving that causes at least some of the ionized substances to travel in the first direction; anda plurality of second electrodes that are disposed outside the plurality of first electrodes, are aligned in a second direction that is perpendicular to the first direction, and form at least part of a flow path of the ionized substances, the plurality of second electrodes forming a common second alternating current electric field in a direction that is perpendicular to the plurality of first alternating current electric fields formed by the plurality of first electrodes and forming the second alternating current electric field that is asymmetric and deflects a direction of travel of the ionized substances in the second direction.17. The transfer device according to claim 16 ,wherein the plurality of second electrodes include two facing electrodes that form a cylindrical flow path and the plurality of first electrodes are disposed along a center axis of the cylindrical flow path ...

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31-10-2013 дата публикации

NANOWIRES, METHOD OF FABRICATION THE SAME AND USES THEREOF

Номер: US20130285008A1
Принадлежит:

A method of forming a nanowire structure is disclosed. The method comprises applying on a surface of carrier liquid a layer of a liquid composition which comprises a surfactant and a plurality of nanostructures each having a core and a shell, and heating at least one of the carrier liquid and the liquid composition to a temperature selected such that the nanostructures are segregated from the surfactant and assemble into a nanowire structure on the surface. 1. A nanowire structure , comprising a pattern of linear sub-structures interconnected thereamongst to form an elongated solid structure , each linear sub-structure being formed of a plurality of nanoparticles;wherein an average diameter of said sub-structures is less than 50 nanometers and an average diameter of said elongated solid structure is at least five times said average diameter of said sub-structures but less than 1 micrometer.2. The nanowire structure according to claim 1 , being carried by a liquid surface.3. The nanowire structure according to claim 1 , wherein an average density of said nanoparticles is at least 4 nanoparticles per 100 square nanometers.4. The nanowire structure according to claim 1 , wherein said nanoparticles are made of a metal.5. The nanowire structure according to claim 4 , wherein said metal is gold.6. The nanowire structure according to claim 1 , wherein said nanoparticles are made of a semiconductor material.7. The nanowire structure according to claim 1 , wherein said nanoparticles are made of a dielectric material.8. The nanowire structure according to claim 1 , wherein said nanoparticles are made of a ferromagnetic material.9. The nanowire structure according to claim 1 , being producible by a method claim 1 , the method comprising:applying on a surface of carrier liquid a layer of a liquid composition which comprises a surfactant and a plurality of nanostructures, each nanostructure having a core enclosed by a hydrophobic shell; andheating at least one of said carrier ...

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07-11-2013 дата публикации

SCANNING ELECTRON MICROSCOPE AND LENGTH MEASURING METHOD USING THE SAME

Номер: US20130292568A1
Принадлежит:

This electron scanning microscope comprises an electron source (), electron optical systems () for exposing a sample () to primary electron beams (), an electron detector () for detecting signal electrons () emitted from the sample, and a deceleration electrical field-type energy filter (). The deceleration electrical field-type energy filter has a conductor thin film () for distinguishing the energy of signal electrons. With this configuration, it is possible to realize a scanning electron microscope having a deceleration electrical field-type energy filter with which high energy resolution is obtained, even in a case where the scanning electron microscope has a retarding optical system. 1. A scanning electron microscope comprising an electron source , a deflector for deflecting a primary electron beam emitted from the electron source , a condenser lens for converging the primary electron beam deflected by the deflector , an electron detector for detecting signal electrons emitted due to irradiation of a sample with the primary electron beam converted by the condenser lens , and a deceleration electrical field-type energy filter which is placed on the sample side than the electron detector and discriminates the energy of the signal electrons ,wherein the deceleration electrical field-type energy filter has a conductor thin film for energy discrimination of the signal electrons.2. The scanning electron microscope according to claim 1 , further comprising deceleration means for decelerating the primary electron beam applied to the sample.3. The scanning electron microscope according to claim 1 , wherein the conductor thin film has at least any of C claim 1 , graphene claim 1 , Al claim 1 , Au claim 1 , Cu and W claim 1 , and the thickness thereof is in the range of greater than or equal to 0.3 nm and less than or equal to 50 nm.4. The scanning electron microscope according to claim 1 , wherein the conductor thin film is a multilayer film of an insulator and a ...

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14-11-2013 дата публикации

CHARGED PARTICLE BEAM APPLIED APPARATUS, AND IRRADIATION METHOD

Номер: US20130299697A1
Принадлежит: HITACHI HIGH-TECHNOLOGIES CORPORATION

Provided is a charged particle beam applied apparatus for observing a sample, provided with: a beam-forming section that forms a plurality of charged particle beams on a sample; an energy control unit that controls the incident energy of the plurality of charged particle beams that are irradiated onto the sample; a beam current control unit that controls the beam current of the plurality of charged particle beams that are irradiated onto the sample; and a beam arrangement control unit that controls the arrangement in which the plurality of charged particle beams is irradiated onto the sample. The beam-forming section includes a beam splitting electrode, a lens array upper electrode, a lens array middle electrode, a lens array lower electrode and a movable stage, and functions as the beam current control unit or the beam arrangement control unit through selection, by the movable stage, of a plurality of aperture pattern sets. 1. A charged particle beam applied apparatus that observes a sample , the apparatus comprising:a beam-forming section that forms plural charged particle beams on the sample and includes plural aperture patterns having apertures with intervals that are different from each other; an energy control unit that controls the incident energy of the plural charged particle beams irradiated onto the sample;a beam current control unit that controls the beam current of the plural charged particle beams irradiated onto the sample, anda beam arrangement control unit that controls the arrangement of the plural charged particle beams irradiated onto the sample.2. The charged particle beam applied apparatus according to claim 1 , wherein the beam-forming section is configured using a beam splitting electrode having the plural aperture patterns claim 1 , a lens array composed of at least three electrodes having the plural aperture patterns claim 1 , and a movable stage on which the beam splitting electrode and the lens array are mounted.3. The charged particle ...

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21-11-2013 дата публикации

Method and apparatus for cleaning residue from an ion source component

Номер: US20130305989A1
Принадлежит: Axcelis Technologies Inc

Some techniques disclosed herein facilitate cleaning residue from a molecular beam component. For example, in an exemplary method, a molecular beam is provided along a beam path, causing residue build up on the molecular beam component. To reduce the residue, the molecular beam component is exposed to a hydro-fluorocarbon plasma. Exposure to the hydro-fluorocarbon plasma is ended based on whether a first predetermined condition is met, the first predetermined condition indicative of an extent of removal of the residue. Other methods and systems are also disclosed.

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28-11-2013 дата публикации

Electron microscope

Номер: US20130313431A1
Принадлежит: Hitachi High Technologies Corp

Provided is an electron microscope capable of enhancing a magnetic shield function even though the structure thereof has an objective tens that projects into a sample chamber space. The electron microscope includes: an objective lens ( 6 ) which focuses an electron beam to irradiate a sample ( 4 ) with; a sample chamber ( 5 ) which forms a sample space to contain the sample ( 4 ); a sample chamber magnetic shield ( 7 ) provided inside the sample chamber ( 5 ); and an objective lens magnetic shield ( 8 ) of a tubular shape which surrounds the periphery of the objective lens ( 6 ). A first and a second hole, which face to each other in a traveling direction of the electron beam, are provided in an upper plate ( 10 ) serving as an upper wall of the sample chamber ( 5 ) and in an upper shield ( 9 ) of the sample chamber magnetic shield ( 7 ). The objective lens ( 6 ) is held inside the first hole provided in the upper plate ( 10 ). A lower end of the objective lens ( 6 ) is disposed at a position lower than a lower end of the upper plate ( 10 ), and at a position of the second hole provided in the upper shield ( 9 ) or at a position near this position. The objective lens magnetic shield ( 8 ) is positioned inside the first hole, and a lower end thereof is connected to the upper shield ( 9 ).

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05-12-2013 дата публикации

Devices and methods for improved reflective electron beam lithography

Номер: US20130320225A1

A device for reflective electron-beam lithography and methods of producing the same are described. The device includes a substrate, a plurality of conductive layers formed on the substrate, which are parallel to each other and separated by insulating pillar structures, and a plurality of apertures in each conductive layer. Apertures in each conductive layer are vertically aligned with the apertures in other conductive layers and a periphery of each aperture includes conductive layers that are suspended.

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05-12-2013 дата публикации

IMAGING AND PROCESSING FOR PLASMA ION SOURCE

Номер: US20130320229A1
Принадлежит: FEI COMPANY

Applicants have found that energetic neutral particles created by a charged exchange interaction between high energy ions and neutral gas molecules reach the sample in a ion beam system using a plasma source. The energetic neutral create secondary electrons away from the beam impact point. Methods to solve the problem include differentially pumped chambers below the plasma source to reduce the opportunity for the ions to interact with gas. 1. A charged particle beam system comprising:a plasma chamber for containing a plasma;a source electrode for biasing the plasma to a voltage of at least 10,000 V;an extraction electrode for extracting ions from the plasma chamber;a focusing lens for focusing the ions into a beam directed toward the work piece;a sample chamber for containing a work piece, the sample chamber connected to a vacuum pump; anda first intermediary vacuum chamber connected at one end to the plasma chamber and at the other end through a differential pumping aperture to the sample chamber or to one or more additional intermediary vacuum chamber, the first intermediary vacuum chamber connected to a vacuum pump, the first and the one or more additional intermediary vacuum chamber or chambers reducing the collision of the ion beam with neutral gas particles, thereby reducing the creation of energetic neutral particles that impact the work piece.2. The charged particle beam system of further comprising at least one additional intermediary vacuum chamber between the first intermediary vacuum chamber and the sample chamber claim 1 , each of the at least one additional intermediary vacuum chambers connected to a vacuum pump and separated from the preceding and succeeding chambers by differential pumping apertures.3. The charged particle beam system of in which each of the additional intermediary vacuum chamber has a lower pressure than the immediately preceding intermediary vacuum chamber.4. The charged particle beam system of in which each of the additional ...

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05-12-2013 дата публикации

Inductively coupled plasma flood gun using an immersed low inductance rf coil and multicusp magnetic arrangement

Номер: US20130320854A1

An inductively coupled radio frequency plasma flood gun having a plasma chamber with one or more apertures, a gas source capable of supplying a gaseous substance to the plasma chamber, a single-turn coil disposed within the plasma chamber, and a power source coupled to the coil for inductively coupling radio frequency electrical power to excite the gaseous substance in the plasma chamber to generate plasma. The inner surface of the plasma chamber may be free of metal-containing material and the plasma may not be exposed to any metal-containing component within the plasma chamber. The plasma chamber may include a plurality of magnets for controlling the plasma and an exit aperture to enable negatively charged particles of the resulting plasma to engage an ion beam that is part of an associated ion implantation system. Magnets are disposed on opposite sides of the aperture used to manipulate the electrons of the plasma.

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26-12-2013 дата публикации

PARTICLE BEAM IRRADIATION APPARATUS AND PARTICLE BEAM THERAPY SYSTEM

Номер: US20130345490A1
Автор: IWATA Takaaki
Принадлежит: Mitsubishi Electric Corporation

A scanning power source that outputs the excitation current for a scanning electromagnet and an irradiation control apparatus that controls the scanning power source; the irradiation control apparatus is provided with a scanning electromagnet command value learning generator that evaluates the result of a run-through, which is a series of irradiation operations through a command value for the excitation current outputted from the scanning power source, that updates the command value for the excitation current, when the result of the evaluation does not satisfy a predetermined condition, so as to perform the run-through, and that outputs to the scanning power source the command value for the excitation current such that its evaluation result has satisfied the predetermined condition. 1. A particle beam irradiation apparatus comprising:a scanning electromagnet that scans a charged particle beam accelerated by an accelerator and has a hysteresis;a scanning power source that outputs an excitation current for driving the scanning electromagnet; andan irradiation control apparatus that controls the scanning power source, wherein the irradiation control apparatus has a scanning electromagnet command value learning generator that (i) evaluates the result of a run-through, which is a series of irradiation operations through a command value for the excitation current outputted from the scanning power source without a patient present, wherein the command value for the excitation current is the entire excitation current value that is used in the driving of the scanning electromagnet, (ii) updates the command value for the excitation current when the result of the evaluation does not satisfy a predetermined condition in order to perform another run-through, (iii) outputs to the scanning power source the command value for the excitation current when its evaluation result has satisfied the predetermined condition, and (iv) stores, in a storage apparatus, an updated command value ...

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02-01-2014 дата публикации

Charged Particle Ray Apparatus and Pattern Measurement Method

Номер: US20140001360A1
Принадлежит: Hitachi-High-Technologies Corporation

Provided is a technique to automatize a synthesis function of signal charged particles having different energies. A charged particle beam apparatus includes: a charged particle source configured to irradiate a sample with a primary charged particle ray; a first detector configured to detect a first signal electron having first energy from signal charged particles generated from the sample; a second detector configured to detect a second signal electron having second energy from signal charged particles generated from the sample; a first operation part configured to change a synthesis ratio of a signal intensity of the first signal electron and a signal intensity of the second signal electron and to generate a detected image corresponding to each synthesis ratio; a second operation part configured to calculate a ratio of signal intensities corresponding to predetermined two areas of the detected image generated for each synthesis ratio; and a third operation part configured to determine a mixture ratio to be used for acquisition of the detected image on a basis of a change of the ratio of signal intensities. 1. A charged particle beam apparatus , comprising:a charged particle source configured to irradiate a sample with a primary charged particle beam;a first detector configured to detect a first signal electron having first energy from signal charged particles generated from the sample;a second detector configured to detect a second signal electron having second energy from signal charged particles generated from the sample;a first operation part configured to change a synthesis ratio of a signal intensity of the first signal electron and a signal intensity of the second signal electron and to generate a detected image corresponding to each synthesis ratio;a second operation part configured to calculate a ratio of signal intensities corresponding to predetermined two areas of the detected image generated for each synthesis ratio; anda third operation part configured ...

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09-01-2014 дата публикации

PLASMA PROCESSING APPARATUS AND TEMPERATURE CONTROL METHOD

Номер: US20140008020A1
Автор: NAGAYAMA Nobuyuki
Принадлежит:

A plasma processing apparatus includes a lower electrode on which a wafer W is provided. A second coolant path is formed in a spiral shape in a region within the lower electrode corresponding to where the wafer W is placed. Further, a first coolant path is formed in a spiral shape to be located in a lower region within the lower electrode corresponding to where the second coolant path is formed. A pipeline connected to a chiller unit is branched into a first pipeline connected to the first coolant path and a second pipeline connected to the second coolant path . A check valve allowing a coolant to flow in one direction is provided on the first pipeline , and a reversing unit reversing a flow direction of the coolant is provided on the pipeline 1. A plasma processing apparatus , comprising:a processing chamber in which a plasma processing space is formed;a mounting table provided within the processing chamber and configured to mount thereon a processing target substrate;a gas supply device configured to introduce a processing gas to be used in plasma reaction into the plasma processing space;a plasma generating device configured to supply electromagnetic energy to excite the processing gas introduced in the plasma processing space into plasma;a plurality of coolant paths formed within the mounting table;a temperature controller configured to control a temperature of a coolant flown and circulated through the plurality of coolant paths;a check valve provided at a part of the plurality of coolant paths; anda reversing unit configured to reverse a flow direction of the coolant that flows and circulates through the plurality of coolant paths.2. The plasma processing apparatus of claim 1 , further comprising:a controller configured to control the reversing unit to reverse the flow direction of the coolant according to a switchover timing of plasma processes performed in the plasma processing apparatus.3. The plasma processing apparatus of claim 1 ,wherein the plurality of ...

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09-01-2014 дата публикации

SUBSTRATE TREATMENT APPARATUS

Номер: US20140008021A1
Автор: KANG Ho Chul
Принадлежит: JUSUNG ENGINEERING CO., LTD.

A substrate treatment apparatus includes a chamber providing a reaction region and including first and second sides facing each other, a module connected to the first side, an upper electrode in the reaction region, a substrate holder facing the upper electrode, wherein a substrate is disposed on the substrate holder, and first and second points are defined on the substrate, wherein the first point corresponds to a center of the substrate, and the second point is distant from the first point toward the first side, and a feeding line for applying an RF power, the feeding line connected to the upper electrode corresponding to the second point. 1. A substrate treatment apparatus , comprising:a chamber comprising a first side and a second arranged on opposite sides of the chamber, said chamber providing a reaction region;a module connected to the first side;an upper electrode arranged in the reaction region;a substrate holder facing the upper electrode and configured to receive a substrate thereon, said substrate having first and second points defined on the substrate, wherein the first point corresponds to a center of the substrate, and wherein the second point is located a distance from the first point toward the first side; andfirst and second feeding lines for applying an RF power to the upper electrode, wherein the first and second feeding lines are connected to first and second portions of the upper electrode, said first and second portions of the upper electrode corresponding to the first and second points of the substrate, respectively.2. The apparatus according to claim 1 , wherein a substrate entrance for carrying the substrate into and out of the chamber is set up at the first side claim 1 , and wherein a slot valve is set up between the module and the substrate entrance.3. The apparatus according to claim 2 , wherein the module includes a transfer chamber or a load lock chamber for supplying the substrate to the chamber or carrying the substrate out of the ...

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09-01-2014 дата публикации

Activated Gaseous Species for Improved Lubrication

Номер: US20140011717A1
Принадлежит: TriboFilm Research Inc

The present application is directed to methods and devices for altering material properties of lubricants and other cross-linkable compounds comprising organic or organometallic materials through exposure to energized gaseous species. The energized gaseous species may create reactive sites among lubricant molecules that may alter their material properties by cross-linking at least a portion of the lubricant molecules. The cross-linked lubricant may reduce the ability of the lubricant to migrate away when force is applied between lubricated sliding friction surfaces.

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16-01-2014 дата публикации

Charged particle multi-beamlet lithography system with modulation device

Номер: US20140014850A1
Принадлежит: Mapper Lithopraphy IP BV

The invention relates to a charged particle lithography system for patterning a target. The lithography system has a beam generator for generating a plurality of charged particle beamlets, a beam stop array with a beam-blocking surface provided with an array of apertures; and a modulation device for modulating the beamlets by deflection. The modulation device has a substrate provided with a plurality of modulators arranged in arrays, each modulator being provided with electrodes extending on opposing sides of a corresponding aperture. The modulators are arranged in groups for directing a group of beamlets towards a single aperture in the beam stop array. Individual modulators within each group have an orientation such that a passing beamlet, if blocking is desired, is directed to a blocking position onto the beam stop array. Beamlet blocking positions for different beamlets are substantially homogeneously spread around the corresponding single aperture in the beam stop array.

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23-01-2014 дата публикации

Substrate processing apparatus and substrate processing method using same

Номер: US20140020832A1
Принадлежит: Tokyo Electron Ltd

A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.

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23-01-2014 дата публикации

SYMMETRICAL INDUCTIVELY COUPLED PLASMA SOURCE WITH COAXIAL RF FEED AND COAXIAL SHIELDING

Номер: US20140020838A1
Принадлежит:

A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and symmetrical RF shielding around the symmetric RF feeds. 1. A plasma reactor comprising:a window assembly;inner, middle and outer coil antennas adjacent said window assembly, and inner, middle and outer current distributors coupled to said inner, middle and outer coil antennas, respectively;a ceiling plate overlying said window assembly and first, second and third RF power terminals at said ceiling plate;first, second and third axial RF power feeds connected between respective ones of said first, second and third RF power terminals and respective ones of said inner, middle and outer current distributors;wherein said third axial RF power feed comprises a hollow axial outer RF power distribution cylinder surrounding said first and second axial RF power feeds.2. The plasma reactor of wherein said second axial RF power feed comprises a hollow axial middle RF power distribution cylinder surrounding said first axial RF power feed.3. The plasma reactor of wherein said first axial RF power feed comprises a center RF connection rod claim 2 , and wherein said center RF connection rod claim 2 , said hollow middle RF power distribution cylinder and said outer RF distribution cylinder are coaxial.4. The plasma reactor of wherein said inner claim 3 , middle and outer coil antennas are coaxial with said center RF connection rod.5. The plasma reactor of further comprising:a plenum plate spaced from and below said ceiling plate and comprising a central opening.6. The plasma reactor of wherein said outer RF distribution cylinder extends through said central opening with a gap between said plenum plate and said outer RF distribution cylinder claim 5 , said plasma reactor further comprising:a radial flange extending from said outer RF distribution cylinder and overlying said gap.7. The plasma reactor of further comprising:plural radial middle arms extending outwardly from said middle RF ...

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23-01-2014 дата публикации

INDUCTIVELY COUPLED PLASMA SOURCE WITH SYMMETRICAL RF FEED

Номер: US20140020839A1
Принадлежит:

A plasma reactor has an overhead multiple coil inductive plasma source with RF feeds arranged in equilateral symmetry. 1. A plasma reactor comprising:a window assembly;inner, middle and outer coil antennas adjacent said window assembly, and inner, middle and outer current distributors coupled to said inner, middle and outer coil antennas, respectively;a ceiling plate overlying said window assembly and first, second and third RF power terminals at said ceiling plate;first, second and third axial RF power feeds connected between respective ones of said first, second and third RF power terminals and respective ones of said inner, middle and outer current distributors;wherein said first and second axial RF power feeds comprise first and second RF connection rods respectively, and said third axial RF power feed comprises an outer RF power distribution cylinder surrounding said first and second RF connection rods.2. The plasma reactor of further comprising a middle RF distribution ring below said outer RF distribution cylinder and coupled to said second RF connection rod.3. The plasma reactor of further comprising:plural radial middle arms extending outwardly from said middle RF distribution ring, and plural axial middle legs extending from said plural radial middle arms to spaced apart locations on said middle current distributor.4. The plasma reactor of further comprising:plural radial outer arms extending outwardly from said outer RF distribution cylinder and plural axial outer legs extending from said plural radial arms to spaced apart locations on said outer current distributor.5. The plasma reactor of further comprising a ground plate below said ceiling plate and above said middle current distributor claim 4 , said plural axial middle legs extending through said ground plate.6. The plasma reactor of wherein said plural axial outer legs extend through said ground plate.7. The plasma reactor of wherein:each one of said inner, middle and outer coil antennas comprises ...

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23-01-2014 дата публикации

Substrate processing apparatus and substrate processing method

Номер: US20140022521A1
Принадлежит: Screen Semiconductor Solutions Co Ltd

An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

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30-01-2014 дата публикации

CHARGED PARTICLE BEAM APPARATUS

Номер: US20140027635A1
Принадлежит:

Provided is a charged particle beam apparatus adapted so that even when an additional device is not mounted in the charged particle beam apparatus, the apparatus rapidly removes, by neutralizing, a local charge developed on a region of a sample that has been irradiated with a charged particle beam. 1. A charged particle beam apparatus , comprising:a charged particle source;a charged particle detector that detects charged particles;a power supply that applies to accelerating electrodes an accelerating voltage for accelerating a charged particle beam;a sample stage on which to mount a sample;a power supply that applies to the sample stage a retarding voltage for decelerating the charged particle beam; anda control computer that controls the accelerating voltage or/and the retarding voltage;wherein the control computer is configured to:measure the sample under a condition that the retarding voltage has a value smaller than that of the accelerating voltage; andafter the measurement, undertake control to neutralize an electric charge by reducing a difference between the value of the retarding voltage and that of the accelerating voltage to a value smaller than that obtained during the measurement.2. The charged particle beam apparatus according to claim 1 , wherein:the control computer controls the value of the retarding voltage to increase in a negative direction, and thus undertakes control to neutralize an electric charge by reducing a difference between the value of the retarding voltage and that of the accelerating voltage to a value smaller than that obtained during the measurement.3. The charged particle beam apparatus according to claim 1 , wherein:the control computer controls a difference between the value of the retarding voltage and that of the accelerating voltage to a −20 to 0 [V] range, thereby neutralizing an electric charge.4. The charged particle beam apparatus according to claim 1 , wherein:the control computer controls a difference between the value ...

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13-02-2014 дата публикации

SUBSTRATE PROCESSING APPARATUS AND GAS SUPPLY APPARATUS

Номер: US20140041805A1
Принадлежит: TOKYO ELECTRON LIMITED

Provided is a substrate processing apparatus in which the concentration of processing gas is matched in a substrate surface at the time of initiating the ejection of the processing gas from a gas supply unit. The gas supply unit is provided with a gas ejecting surface facing the wafer disposed on a disposition unit. The gas supply unit is also provided with gas flow paths, and a flow path length and a flow path diameter of the diverged gas flow paths are set such that periods of time for gas flowing from a gas supply hole to a plurality of gas ejecting holes formed on the gas ejecting surface are matched with each other. Thus, the timings when the processing gas reaches the respective gas ejecting holes immediately after initiating the ejection of the processing gas are matched. 1. A substrate processing apparatus configured to perform processing on a substrate by a processing gas under an atmospheric pressure within a processing chamber , the substrate processing apparatus comprising:a disposition unit provided within the processing chamber configured to dispose the substrate; anda gas supply unit equipped with a gas ejecting surface facing the substrate and provided to supply the processing gas to the substrate disposed on the disposition unit,wherein the gas supply unit includes a plurality of gas ejecting holes formed to be distributed over an entire surface of an area of the gas ejecting surface facing the substrate, and gas flow paths having an upstream side communicated with a common gas supply hole and diverged on the way to have a downstream side opened as the plurality of gas ejecting holes, anda flow path length and a flow path diameter of the diverged gas flow path are set such that periods of time for gas flowing from the gas supply hole to the plurality of gas ejecting holes match each other.2. The substrate processing apparatus of claim 1 , wherein the gas flow path formed to be diverged in a stepwise diagram shape that determines a tournament ...

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13-02-2014 дата публикации

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Номер: US20140042123A1
Автор: Hirayama Masaki
Принадлежит: TOHOKU UNIVERSITY

A plasma processing apparatus which can improve density uniformity of plasma excited by a high frequency wave (such as in the VHF frequency band) for a substrate having a large size. The plasma processing apparatus includes a waveguide member defining a waveguide, a coaxial tube supplying electromagnetic energy from a predetermined power supply position in the longitudinal direction of the waveguide into the waveguide, and a plurality of electrodes for electric field formation, to which the electromagnetic energy is supplied through the waveguide and which is disposed so as to face a plasma formation space, the plurality of electrodes are being arranged in the longitudinal direction of the waveguide, and each of the plurality of electrodes extends in the width direction of the waveguide. 1. A plasma processing apparatus , comprising:a waveguide member defining a wave guide;a transmission path supplying electromagnetic energy from a predetermined power supply position in a longitudinal direction of the waveguide into the waveguide, the longitudinal direction being a waveguide direction; anda plurality of electrodes for electric field formation disposed so as to face a plasma formation space and receiving the electromagnetic energy supplied through the waveguide, whereinthe plurality of electrodes are arranged in the longitudinal direction of the waveguide, andeach of the plurality of electrodes extends in a width direction of the waveguide, the width direction being perpendicular to the longitudinal direction of the guide wave and a width direction, the width direction being parallel to an electromagnetic wavefront.2. The plasma processing apparatus according to claim 1 , whereineach of the plurality of electrodes is formed of a metal film electroplated on a surface of a dielectric plate.3. The plasma processing apparatus according to claim 2 , whereinthe dielectric plate includes a plurality of grooves, each of the grooves being formed between two adjacent ...

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20-02-2014 дата публикации

SUBSTRATE PROCESSING APPARATUS

Номер: US20140048210A1
Принадлежит: TOKYO ELECTRON LIMITED

A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed 1. A substrate processing apparatus comprising:an accommodating chamber which accommodates the substrate;a lower electrode which is disposed inside the accommodating chamber and on which the substrate is held;an upper electrode which faces the lower electrode;a high frequency power source which is connected to the lower electrode;a processing space between the upper electrode and the lower electrode; anda ground which is electrically connected to the upper electrode,wherein a dielectric is buried in at least a portion of the upper electrode andone of the upper electrode and the lower electrode is moveable with respect to the other, thereby being able to performing a first process on the substrate while an interval between the upper electrode and the lower electrode is maintained to a first distance and performing a second process on the substrate while the interval is maintained to a second distance.2. The substrate processing apparatus of claim 1 , wherein the upper electrode has a plate shape claim 1 , and the dielectric is provided along a plane direction of the upper electrode.3. The substrate processing apparatus of claim 1 , wherein the dielectric ...

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20-02-2014 дата публикации

PLASMA PROCESSING APPARATUS

Номер: US20140048211A1
Автор: Yamazawa Yohei
Принадлежит: TOKYO ELECTRON LIMITED

An inductively coupled plasma process can effectively and properly control plasma density distribution within donut-shaped plasma in a processing chamber is provided. In an inductively coupled plasma processing apparatus, a RF antenna disposed above a dielectric window is segmented in a diametrical direction into an inner coil an intermediate coil and an outer coil in order to generate inductively coupled plasma. Between a first node Nand a second node Nprovided in high frequency transmission lines of the high frequency power supply unit a variable intermediate capacitor and a variable outer capacitor are electrically connected in series to the intermediate coil and the outer coil respectively, and a fixed or semi-fixed inner capacitor is electrically connected to the inner coil 1. A plasma processing apparatus , comprising:a processing chamber having a dielectric window;a substrate holding unit for holding thereon a processing target substrate within the processing chamber;a processing gas supply unit configured to supply a processing gas into the processing chamber in order to perform a plasma process on the processing target substrate;an RF antenna provided outside the dielectric window in order to generate plasma of the processing gas within the processing chamber by inductive coupling; anda high frequency power supply unit configured to supply a high frequency power having a frequency for generating a high frequency electric discharge of the processing gas in the RF antenna,wherein the RF antenna includes an inner coil, an intermediate coil, and an outer coil with gaps therebetween in a radial direction, respectively, and the inner coil, the intermediate coil and the outer coil are electrically connected to one another in parallel between a first node and a second node provided in high frequency transmission lines of the high frequency power supply unit,a variable intermediate capacitor and a variable outer capacitor are provided between the first node and the ...

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20-02-2014 дата публикации

Optical Characterization Systems Employing Compact Synchrotron Radiation Sources

Номер: US20140048707A1
Автор: Liu Yanwei, Wack Daniel C.
Принадлежит: KLA-TENCOR CORPORATION

A compact synchrotron radiation source includes an electron beam generator, an electron storage ring, one or more wiggler insertion devices disposed along one or more straight sections of the electron storage ring, the one or more wiggler insertion devices including a set of magnetic poles configured to generate a periodic alternating magnetic field suitable for producing synchrotron radiation emitted along the direction of travel of the electrons of the storage ring, wherein the one or more wiggler insertion devices are arranged to provide light to a set of illumination optics of a wafer optical characterization system or a mask optical characterization system, wherein the etendue of a light beam emitted by the one or more wiggler insertion devices is matched to the illumination optics of the at least one of a wafer optical characterization system and the mask optical characterization system. 1. A compact synchrotron radiation source for generating light for an optical characterization system comprising:an electron beam generator configured to generate one or more beams of electrons;an electron storage ring including a plurality of magnets configured to bend a trajectory of the electrons to trace a closed path; andone or more wiggler insertion devices disposed along at least one straight section of the electron storage ring, the one or more wiggler insertion devices including a plurality of magnetic poles configured to generate a periodic alternating magnetic field suitable for producing synchrotron radiation emitted substantially along the direction of travel of the electrons by accelerating the electrons periodically in a direction perpendicular to the direction of travel, wherein the one or more wiggler insertion devices are configured to provide light to an optical input of the optical characterization system, wherein the etendue of a light beam emitted by the one or more wiggler insertion devices is matched to an optical input of an optical characterization ...

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27-02-2014 дата публикации

Chromatic Aberration Corrector and Method of Controlling Same

Номер: US20140054468A1
Автор: Hosokawa Fumio
Принадлежит: JEOL LTD.

A chromatic aberration corrector and method of controlling this chromatic aberration corrector is offered. The corrector has first and second multipole lenses for producing quadrupole fields and first and second transfer lenses each having a focal length of f. The first and second multipole lenses are arranged on opposite sides of the first and second transfer lenses. The distance between the first multipole lens and the first transfer lens is f. The distance between the first transfer lens and the second transfer lens is 2f. The distance between the second transfer lens and the second multipole lens is f−Δ. The corrector is so designed that the relationship, f>Δ>0, holds. 1. A chromatic aberration corrector for correcting an electron optical system of an electron microscope for chromatic aberration , said chromatic aberration corrector comprising:first and second multipole lenses for producing quadrupole fields; andfirst and second transfer lenses each having a focal length of f;wherein said first and second multipole lenses are arranged on opposite sides of said first and second transfer lenses;{'sub': 1', '2, 'wherein the distance between the first multipole lens and the first transfer lens is f−Δ, the distance between the first and second transfer lenses is 2f, and the distance between the second transfer lens and the second multipole lens is f−Δ; and'}{'sub': 1', '2, 'wherein the corrector is so designed that the relationship, f>Δ+Δ>0, holds.'}3. A chromatic aberration corrector for correcting an electron optical system of an electron microscope for chromatic aberration , said chromatic aberration corrector comprising:first and second multipole lenses for producing quadrupole fields;first and second transfer lenses each having a focal length of f; andan auxiliary lens on opposite sides of which are arranged the first and second transfer lenses;wherein said first and second multipole lenses are arranged on opposite sides of said first and second transfer lenses ...

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27-02-2014 дата публикации

METHOD AND APPARATUS FOR A POROUS ELECTROSPRAY EMITTER

Номер: US20140054809A1
Принадлежит: Massachusetts Institute of Technology

An ionic liquid ion source can include a microfabricated body including a base and a tip. The body can be formed of a porous material compatible with at least one of an ionic liquid or room-temperature molten salt. The body can have a pore size gradient that decreases from the base of the body to the tip of the body, such that the at least one of an ionic liquid or room-temperature molten salt is capable of being transported through capillarity from the base to the tip. 1. A method of forming one or more emitter bodies made of porous ceramic xerogel comprising:preparing a gel solution comprising a solvent, an acidic aluminum salt, a polymer, and a proton scavenger;providing a mold for one or more emitter bodies, each emitter body of the one or more emitter bodies comprising a base and a tip;pouring the gel solution into the mold;drying the gel solution in the mold to form the one or more emitter bodies made from the porous ceramic xerogel.2. The method of further comprising:mixing aluminum chloride hexahydrate, polyethylene oxide, water, ethanol, and propylene oxide to form the gel solution.3. The method of further comprising:mixing 1 part by mass of polyethylene oxide, 50 parts by mass water, 54.4 parts by mass ethanol, 54.4 parts by mass propylene oxide, and 54 parts by mass of aluminum chloride hexahydrate to form the gel solution.4. The method of further comprising:forming the mold from one or more of polydimethylsiloxane (PDMS), polytetrafluoroethylene (PTFE), polymers, fluoropolymers, paraffin wax, silica, glass, aluminum, and stainless steel.5. The method of claim 1 , wherein the porous ceramic xerogel is alumina xerorgel.6. The method of claim 1 , wherein the porous ceramic xerogel comprises pores approximately 3-5 μm in diameter.7. A method of forming one or more emitter bodies made from porous ceramic material comprising:preparing a slurry of at least silica, water, and a ceramic component;providing a mold for one or more emitter bodies, each emitter body ...

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06-03-2014 дата публикации

TEMPLATES INCLUDING SELF-ASSEMBLED BLOCK COPOLYMER FILMS

Номер: US20140060736A1
Принадлежит: MICRON TECHNOLOGY, INC.

Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer. 1. A template for etching a substrate , the template comprising:{'sub': o', '0, 'having sidewalls, opposing ends, a floor, a width, and a length, the polymer matrix in first trenches comprising perpendicular cylindrical openings separated at a pitch distance of about L, and the polymer matrix in second trenches comprising linear openings extending the length of the second trenches and separated at a pitch distance of about L.'}2. The template of claim 1 , wherein the perpendicular cylindrical openings in the polymer matrix in the first trenches are in a hexagonal array.3. The template of claim 2 , wherein the ends of the first trenches are rounded.4. The template of claim 2 , wherein the width of the first trenches is about Lor about n*Lwhere n is an integer of 3 or greater.5. The template of claim 1 , wherein the perpendicular cylindrical openings are in a single line extending the length of the first trenches.6. The template of claim 5 , wherein the width of the first trenches is from about 1.5*Lto about 2*L.7. The template of claim 1 , wherein the openings in the first trenches extend through the polymer matrix to the floors of the first trenches.8. The template of claim 1 , wherein the polymer matrix is crosslinked and comprises a majority block of a self-assembled block copolymer.9. A template for etching a substrate claim 1 , the template comprising:{'sub': o', 'o, 'openings extending through a polymer matrix of a majority block of a self-assembled block copolymer film within trenches in a material, each trench having sidewalls, opposing ends, a floor, a width, and a length, the polymer matrix in first trenches comprising ...

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06-03-2014 дата публикации

APPARATUS FOR TREATING SUBSTRATE

Номер: US20140060738A1
Принадлежит: SEMES CO., LTD.

Provided is a substrate treating apparatus using plasma. A substrate treating apparatus includes a chamber having a treating space therein, a support member disposed in the chamber to support the substrate, a gas supply unit supplying a gas into the chamber, and a plasma source disposed on an upper portion of the camber, the plasma source including an antenna generating plasma from the gas supplied into the chamber, wherein the chamber includes a housing having an opened top surface, the housing having a treating space therein, and a dielectric substance assembly covering the opened top surface of the housing, and wherein the dielectric substance assembly includes a dielectric substance window and a reinforcement film having strength greater than that of the dielectric substance window. 1. A substrate treating apparatus comprising:a chamber having a treating space therein;a support member disposed in the chamber to support the substrate;a gas supply unit supplying a gas into the chamber; anda plasma source disposed on an upper portion of the camber, the plasma source comprising an antenna generating plasma from the gas supplied into the chamber,wherein the chamber comprises:a housing having an opened top surface, the housing having a treating space therein; anda dielectric substance assembly covering the opened top surface of the housing, andwherein the dielectric substance assembly comprises a dielectric substance window and a reinforcement film having strength greater than that of the dielectric substance window.2. The substrate treating apparatus of claim 1 , wherein the reinforcement film is attached to a top surface of the dielectric substance window.3. The substrate treating apparatus of claim 2 , wherein the reinforcement film is provided as a multilayer.4. The substrate treating apparatus of claim 3 , wherein at least one layer of the multilayer is formed of a silicon material.5. The substrate treating apparatus of claim 1 , wherein the dielectric substance ...

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06-03-2014 дата публикации

RF GROUND RETURN IN PLASMA PROCESSING SYSTEMS AND METHODS THEREFOR

Номер: US20140060739A1
Принадлежит:

Methods and apparatus for operating the plasma processing chamber of a plasma processing tool in at least two modes are disclosed. In the first mode, the substrate-bearing assembly is movable within a gap-adjustable range to adjust the gap between the electrodes to accommodate different processing requirements. In this first mode, RF ground return path continuity is maintained irrespective of the gap distance as long as the gap distance is within the gap-adjustable range. In the second mode, the substrate bearing assembly is capable of moving to further open the gap to accommodate unimpeded substrate loading/unloading. 1. A plasma processing chamber for plasma processing of a substrate , comprising:an upper ground assembly;a movable substrate-bearing assembly for supporting said substrate during said plasma processing, said movable substrate-bearing assembly having ground shelf portion, whereby a gap between an upper surface of said movable substrate-bearing assembly and a lower surface of said upper ground assembly defines a plasma generating region and whereby said movable substrate-bearing assembly is movable in a direction parallel to an axis of said movable substrate-bearing assembly to adjust said gap;a peripheral ground ring disposed around said movable substrate bearing assembly, whereby said peripheral ground ring is slidably movable relative to said substrate-bearing assembly in a direction parallel to said axis of said movable substrate-bearing assembly;at least one flexible RF conductor to provide RF coupling between said ground shelf portion and said peripheral ground ring;a plurality of pistons operatively coupled to said ground shelf portion of said movable substrate bearing assembly and said peripheral ground ring, each of said plurality of pistons having a predefined stroke length to define a first operating state and a second operating state of said peripheral ground ring, said first operating state characterized by said plurality of pistons ...

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06-03-2014 дата публикации

COMPOSITE CHARGED PARTICLE BEAM APPARATUS AND THIN SAMPLE PROCESSING METHOD

Номер: US20140061159A1
Принадлежит: HITACHI HIGH-TECH SCIENCE CORPORATION

A composite charged particle beam apparatus includes: a FIB column irradiating a thin sample with FIB; a GIB column irradiating the thin sample with GIB; a sample stage on which the thin sample is placed; a first tilt unit for tilting the thin sample about a first tilt axis of the sample stage, the first tilt axis being orthogonal to an FIB irradiation axis and being located inside a first plane formed by the FIB irradiation axis and a GIB irradiation axis; and a second tilt unit for tilting the thin sample about an axis which is orthogonal to the FIB irradiation axis and the first tilt axis. 1. A composite charged particle beam apparatus , comprising:a first charged particle beam column configured to irradiate a thin sample with a first charged particle beam;a second charged particle beam column configured to irradiate an irradiation position of the first charged particle beam of the thin sample with a second charged particle beam;a sample stage on which the thin sample is placed;a first tilt unit configured to tilt the thin sample about a first tilt axis of the sample stage, the first tilt axis being orthogonal to an irradiation axis of the first charged particle beam column and being located inside a plane formed by the irradiation axis of the first charged particle beam column and the irradiation axis of the second charged particle beam column; anda second tilt unit configured to tilt the thin sample about an axis orthogonal to the irradiation axis of the first charged particle beam column and the first tilt axis.2. The composite charged particle beam apparatus according to claim 1 ,wherein the second tilt unit is a tilt sample holder configured to fix the thin sample such that a cross-sectional surface of the thin sample is tilted at a constant angle with respect to a direction of the irradiation axis of the second charged particle beam.3. The composite charged particle beam apparatus according to claim 2 ,wherein the tilt sample holder is attachable to and ...

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06-03-2014 дата публикации

Charged particle lithography system with intermediate chamber

Номер: US20140061497A1
Принадлежит: Mapper Lithopraphy IP BV

A charged particle lithography system for transferring a pattern onto the surface of a target, comprising a source for generating a charged particle beam, a first chamber housing the source, a collimating system for collimating the charged particle beam, a second chamber housing the collimating system, and a first aperture array element for generating a plurality of charged particle subbeams from the collimated charged particle beam.

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06-03-2014 дата публикации

SILICON-CONTAINING DOPANT COMPOSITIONS, SYSTEMS AND METHODS OF USE THEREOF FOR IMPROVING ION BEAM CURRENT AND PERFORMANCE DURING SILICON ION IMPLANTATION

Номер: US20140061501A1
Принадлежит:

A novel composition, system and method thereof for improving beam current during silicon ion implantation are provided. The silicon ion implant process involves utilizing a first silicon-based co-species and a second species. The second species is selected to have an ionization cross-section higher than that of the first silicon-based species at an operating arc voltage of an ion source utilized during generation and implantation of active silicon ions species. The active silicon ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated solely from SiF4. 1. A dopant gas composition comprising:a silicon-based dopant gas composition comprising a first silicon-based species and a second species, wherein said second species is selected to have a ionization cross-section higher than that of the first silicon-based species at an operating arc voltage of an ion source utilized during generation and implantation of active silicon ions;wherein said silicon-based dopant gas composition improves the ion beam current so as to maintain or increase beam current without degradation of said ion source in comparison to a beam current generated from silicon tetrafluoride (SiF4).2. The dopant gas composition of claim 1 , wherein said first silicon-based species is selected from the group consisting of SiH2Cl2 claim 1 , Si2H6 claim 1 , SiH4 SiF2H2 claim 1 , SiF4 and any combination thereof.3. The dopant composition of claim 1 , wherein said first silicon-based species is SiF4.4. The dopant composition of claim 1 , wherein said first silicon-based species is SiF4 and the second species is disilane (S2H6).5. The dopant composition of claim 4 , wherein said S2H6 has a concentration of less than 50% based on the overall volume of said composition.6. The dopant composition of claim 5 , wherein said S2H6 has a concentration of about 10% or less.7. A system ...

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06-03-2014 дата публикации

Ion generation method and ion source

Номер: US20140062286A1
Автор: Masateru Sato
Принадлежит: SEN Corp

An ion generation method uses a direct current discharge ion source provided with an arc chamber formed of a high melting point material, and includes: generating ions by causing molecules of a source gas to collide with thermoelectrons in the arc chamber and producing plasma discharge; and causing radicals generated in generating ions to react with a liner provided to cover an inner wall of the arc chamber at least partially. The liner is formed of a material more reactive to radicals generated as the source gas is dissociated than the material of the arc chamber.

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06-03-2014 дата публикации

SYSTEMS AND METHODS FOR MONITORING FAULTS, ANOMALIES, AND OTHER CHARACTERISTICS OF A SWITCHED MODE ION ENERGY DISTRIBUTION SYSTEM

Номер: US20140062495A1
Принадлежит: ADVANCED ENERGY INDUSTRIES, INC.

Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis. 1. A system for monitoring of a plasma processing chamber , the system comprising:a plasma processing chamber configured to contain a plasma;a substrate support positioned within the plasma processing chamber and disposed to support a substrate,an ion-energy control portion, the ion-energy control portion provides at least one ion-energy control signal responsive to at least one ion-energy distribution setting that is indicative of a desired ion energy distribution at the surface of the substrate;a switch-mode power supply coupled to the substrate support and the ion-energy control portion, the switch-mode power supply including one or more switching components configured to apply power to the substrate as a periodic voltage function;an ion current compensation component coupled to the substrate support, the ion current compensation component adding an ion compensation current to the periodic voltage function to form a modified periodic voltage function; anda controller coupled to the substrate support, the controller determining an ion current in the plasma processing chamber from the ion compensation current and comparing the ion current to a reference current waveform.2. The system of claim 1 , wherein the controller compares the modified periodic voltage function to a reference voltage waveform.3. ...

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20-03-2014 дата публикации

PARTICLE SOURCES AND METHODS FOR MANUFACTURING THE SAME

Номер: US20140077684A1
Автор: Chen Ping, Liu Huarong

The present disclosure provides a method for manufacturing a particle source comprising: placing a metal wire in vacuum, introducing active gas, adjusting a temperature of the metal wire and applying a positive high voltage V to the metal wire to generate at a side of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the top of the metal wire head to be greater than a field evaporation electric field of material for the metal wire, so that metal atoms at the top of the metal wire are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape. 1. A method for manufacturing a particle source , comprising:placing a metal wire in vacuum, introducing active gas, adjusting a temperature of the metal wire and applying a positive high voltage V to the metal wire to generate at a side of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed;increasing by the FICE a surface electric field at the top of the metal wire head to be greater than a field evaporation electric field of material for the metal wire, so that metal atoms at the top of the metal wire are evaporated off;after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base; andstopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.2. The method of claim 1 , wherein the positive high voltage V enables a surface electric field at the top of the head to be greater than an ionization electric ...

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27-03-2014 дата публикации

Cluster beam generating apparatus, substrate processing apparatus, cluster beam generating method, and substrate processing method

Номер: US20140083976A1
Принадлежит: Tokyo Electron Ltd

A cluster beam generating method that generates a cluster beam includes steps of mixing a gas source material and a liquid source material in a mixer; supplying a cluster beam including clusters originating from the gas source material and clusters originating from the liquid source material that are mixed in the mixer from a nozzle; and adjusting a temperature of the nozzle using a temperature adjusting portion that adjusts a temperature of the nozzle, thereby controlling a ratio of the clusters originating from the gas source material and the clusters originating from the liquid source material in the cluster beam.

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27-03-2014 дата публикации

Plasma processing apparatus and plasma processing method

Номер: US20140083977A1
Принадлежит: Toshiba Corp

In one embodiment, a plasma processing apparatus includes: a chamber; an introducing part; a counter electrode; a high-frequency power source; and a plurality of low-frequency power sources. A substrate electrode is disposed in the chamber, a substrate is directly or indirectly placed on the substrate electrode, and the substrate electrode has a plurality of electrode element groups. The introducing part introduces process gas into the chamber. The high-frequency power source outputs a high-frequency voltage for ionizing the process gas to generate plasma. The plurality of low-frequency power sources apply a plurality of low-frequency voltages of 20 MHz or less with mutually different phases for introducing ions from the plasma, to each of the plurality of electrode element groups.

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27-03-2014 дата публикации

Temperature controlled plasma processing chamber component with zone dependent thermal efficiences

Номер: US20140083978A1
Принадлежит: Individual

Components and systems for controlling a process or chamber component temperature as a plasma process is executed by plasma processing apparatus. A first heat transfer fluid channel is disposed in a component subjacent to a working surface disposed within a plasma processing chamber such that a first length of the first channel subjacent to a first temperature zone of the working surface comprises a different heat transfer coefficient, h, or heat transfer area, A, than a second length of the first channel subjacent to a second temperature zone of the working surface. In embodiments, different heat transfer coefficients or heat transfer areas are provided as a function of temperature zone to make more independent the temperature control of the first and second temperature zones.

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27-03-2014 дата публикации

System and Method for Ex Situ Analysis of a Substrate

Номер: US20140084157A1
Принадлежит: FEI Co

A method and system for creating an asymmetrical lamella for use in an ex situ TEM, SEM, or STEM procedure is disclosed. The shape of the lamella provides for easy orientation such that a region of interest in the lamella can be placed over a hole in a carbon film providing minimal optical and spectral interference from the carbon film during TEM, SEM, or STEM procedure of chemical analysis.

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10-04-2014 дата публикации

Method and apparatus for thermal control of ion sources and sputtering targets

Номер: US20140099782A1
Автор: Neil J. Bassom

A method and apparatus are disclosed for controlling a semiconductor process temperature. In one embodiment a thermal control device includes a heat source and a housing comprising a vapor chamber coupled to the heat source. The vapor chamber includes an evaporator section and a condenser section. The evaporator section has a first wall associated with the heat source, the first wall having a wick for drawing a working fluid from a lower portion of the vapor chamber to the evaporator section. The condenser section coupled to a cooling element. The vapor chamber is configured to transfer heat from the heat source to the cooling element via continuous evaporation of the working fluid at the evaporator section and condensation of the working fluid at the condenser section. Other embodiments are disclosed and claimed.

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07-01-2021 дата публикации

DEVICE AND METHOD FOR PASTEURIZING AND/OR STERILIZING PARTICULATE MATERIAL

Номер: US20210000145A1
Автор: CURRIE Alasdair
Принадлежит:

A device(s) and method for pasteurizing and/or sterilizing particulate material using an electron beam. The device () includes at least one electron source () for generating an electron beam, a treatment zone () in which the material, particularly a freely falling material, can be pasteurized and/or sterilized by the electron beam, and a material channel () arranged in the region of the treatment zone () in which the material can be pasteurized and/or sterilized by the electron beam. A planar protective element (), which is at least partially permeable by the electron beam, is arranged between the electron source () and the material channel (). The device () includes a holding frame () which holds the protective element () and which has a cavity () through which a cooling fluid can flow. 113-. (canceled)14. An apparatus for pasteurizing and/or sterilizing particulate material , comprising:at least two electron sources for generating an electron beam,a treatment zone, in which the material, freely falling, can be pasteurized and/or sterilized by means of the electron beam,a material channel arranged in a region of the treatment zone, in which the material can be pasteurized and/or sterilized by means of the electron beam, 'a flat protective element is arranged between the electron source and the material channel, and the flat protective element is at least partially transparent to the electron beam, and', 'wherein the at least two electron sources are arranged opposite each other with respect to the freely falling material,'}the device includes a holding frame which holds the protective element and which has a cavity through which a cooling fluid can flow.15. The apparatus according to claim 14 , wherein the flat protective element consists of a metal.16. The apparatus according to claim 14 , wherein the cavity is formed as a closed tube.17. The apparatus according to claim 16 , wherein the closed tube has a diameter of 3-8 mm.18. The apparatus according to claim 14 ...

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01-01-2015 дата публикации

Blanking apparatus, drawing apparatus, and method of manufacturing article

Номер: US20150001417A1
Принадлежит: Canon Inc

The present invention provides a blanking apparatus comprising a plurality of blankers configured to respectively blank a plurality of beams with respect to a target position on an object, and a driving device configured to drive the plurality of blankers, wherein the driving device includes a change device configured to change relation between a combination of beams of the plurality of beams, and a target dose.

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05-01-2017 дата публикации

ION GENERATOR MOUNTING DEVICE

Номер: US20170000921A1
Принадлежит: Global Plasma Solutions, LLC

The present invention provides methods and systems for an ion generator mounting device for application of bipolar ionization to airflow within a conduit, the device includes a housing for mounting to the conduit having an internal panel within the enclosure, and an arm extending from the housing for extension into the conduit and containing at least one opening. At least one coupling for mounting an ion generator to the arm oriented with an axis extending between a pair of electrodes of the ion generator being generally perpendicular to a flow direction of the airflow within the conduit. 1. An ion generator mounting device , comprising: 'a base,', 'a housing comprising [ 'at least one opening within the housing;', 'a top portion; and'}, 'a retention means extending outwardly from the housing; and', 'at least one coupling for mounting the ion generator., 'a first and second pair of spaced-apart, opposed sidewalls projecting from the base to collectively form an interior storage compartment and to define an upper edge;'}2. The ion generator mounting device of claim 1 , further comprising an ion generator disposed within the interior storage compartment.3. The ion generator mounting device of claim 1 , further comprising an ion generator containing at least one electrode for dispersing ions from the ion generator that is disposed within the interior storage compartment claim 1 , whereby at least one electrode is disposed adjacent that at least one opening.4. The ion generator mounting device of claim 1 , further comprising a power supply.5. The ion generator mounting device of claim 1 , further comprising a switch.6. The ion generator mounting device of claim 1 , further comprising a retention means disposed on one of the sidewalls and extending therefrom.7. The ion generator mounting device of claim 1 , further comprising an indicator disposed on the housing.8. An ion generator mounting device claim 1 , comprising:an elongate arm, comprising a first side and a second ...

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01-01-2015 дата публикации

METAL HEXABORIDE COLD FIELD EMITTER, METHOD OF FABRICATING SAME, AND ELECTRON GUN

Номер: US20150002009A1
Принадлежит:

A metal hexaboride nanowire such as LaBwith the formed metal-terminated (100) plane at the tip has a small work function, and can emit a very narrow electron beam from the (100) plane. In such emitters, contamination occurs in a very short time period, and the output current greatly decreases when used under low temperature. The cold field emitter of the present invention overcomes this problem with a stabilization process that exposes the metal-terminated (100) plane of the tip to hydrogen at low temperature, and can stably operate over extended time periods. 1. A metal hexaboride cold field emitter comprising a metal hexaboride nanorod ending at a tip having a hydrogen-stabilized metal-terminated (100) plane.2. The metal hexaboride cold field emitter according to claim 1 , wherein the nanorod is a monocrystal that extends in a <100> direction.3. The metal hexaboride cold field emitter according to claim 1 , wherein the tip is shaped into a hemispherical form.4. The metal hexaboride cold field emitter according to claim 1 , wherein the nanorod has a diameter in a range of 10 to 300 nm.5. The metal hexaboride cold field emitter according to claim 1 , wherein the metal hexaboride is LaB.613-. (canceled)14. An electron gun that comprises the metal hexaboride cold field emitter of .15. The electron gun according to claim 14 , wherein the electron gun comprises:a cooling device connected to the metal hexaboride cold field emitter via an electrically insulating heat conductor; anda hydrogen nozzle through which hydrogen is introduced. The present invention relates to cold field emitters (CFE) used in applications such as the electron source of an electron microscope, particularly to a metal hexaboride CFE of improved stability, a method for fabricating same, and an electron gun using same.Electron microscopes including transmission electron microscopes (TEM) and scanning electron microscopes (SEM) have acquired ever increasing resolutions in terms of space, time, and ...

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02-01-2020 дата публикации

POWER POLISHING APPARATUSES AND METHODS FOR IN-SITU FINISHING AND COATING OF OPTICAL COMPONENT

Номер: US20200001423A1
Принадлежит: Edmund Optics, Inc.

A finishing and coating apparatus is configured for power polishing optical components. The apparatus includes a housing, a substrate holder, a vacuum pump system, a laser, and a coating source. The housing defines a chamber and the substrate holder is disposed within the chamber and configured to hold one or more optical components. The vacuum pump system is configured to create a vacuum within the chamber. The laser includes a laser engine and a laser beam delivery apparatus configured to direct a beam from the laser engine toward the one or more optical components. The laser is configured to finish the one or more optical components prior to coating the one or more optical components. 1. A finishing and coating apparatus comprising:a housing defining a chamber;a substrate holder disposed within the chamber configured to hold one or more optical components;a vacuum pump system configured to create a vacuum within the chamber; a laser engine; and', 'a laser beam delivery apparatus configured to direct a beam from the laser engine toward the one or more optical components; and, 'a laser comprisinga coating source;wherein the laser is configured to finish the one or more optical components prior to coating of the one or more optical components.2. The finishing and coating apparatus of claim 1 , wherein the coating source includes a coating body and the finishing and coating apparatus includes an electron gun claim 1 , the electron gun configured to bombard the coating body to transform a portion of the coating body to a vapor phase to coat the one or more optical components.3. The finishing and coating apparatus of claim 1 , wherein the coating source includes a sputtering target and the finishing and coating apparatus includes an ion gun claim 1 , the ion gun configured to direct ions at the sputtering target to eject material from the sputtering target to coat the one or more optical components.4. The finishing and coating apparatus of claim 1 , wherein the coating ...

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06-01-2022 дата публикации

Electromagnetic Field Shielding Plate, Method for Manufacturing Same, Electromagnetic Field Shielding Structure, and Semiconductor Manufacturing Environment

Номер: US20220007556A1
Принадлежит:

Provided is an electromagnetic field shielding plate, etc., in which it is possible to reduce weight while achieving high shielding performance from relatively high-frequency electromagnetic fields. The electromagnetic field shielding plate is configured by layering a permalloy layer comprising a plate or sheet of permalloy, and an amorphous layer comprising an Fe—Si—B—Cu—Nb-based amorphous plate or sheet. 148.-. (canceled)49. An electromagnetic field shielding structure havinga first shielding plate including an electromagnetic field shielding plate configured by stacking a permalloy layer comprising a plate material or a sheet of permalloy and an amorphous layer comprising a plate material or a sheet of Fe—Si—B—Cu—Nb-based amorphous,a second shielding plate including another electromagnetic field shielding plate, anda ridge connection member, wherein:the ridge connection member is configured by stacking at least a ridge permalloy layer comprising a plate material or a sheet of permalloy and a ridge stainless steel layer comprising an austenitic stainless steel material with a thickness in the range of 1.8 mm to 2.4 mm;the ridge connection member has a ridge forming a first angle and is provided with female thread elements on both sides of the ridge;at least a part on one side of the ridge of the ridge connection member and at least a part of the first shielding plate are fixed so as to overlap; andat least a part on the other side of the ridge of the ridge connection member and at least a part of the second shielding plate are fixed so as to overlap.50. An electromagnetic field shielding structure havinga first shielding plate including an electromagnetic field shielding plate configured by stacking a permalloy layer comprising a plate material or a sheet of permalloy and an amorphous layer comprising a plate material or a sheet of Fe—Si—B—Cu—Nb-based amorphous,a second shielding plate including another electromagnetic field shielding plate,a second fixing member ...

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01-01-2015 дата публикации

DRAWING APPARATUS, AND METHOD OF MANUFACTURING ARTICLE

Номер: US20150004807A1
Принадлежит:

A drawing apparatus for performing drawing on a substrate with a charged particle beam, includes: a controller configured to control a dose of the charge particle beam at each of a plurality of positions of the charged particle beam on the substrate based on information of displacement of each of the plurality of positions from a target position corresponding thereto and a target dose of the charged particle beam at the target position corresponding to each of the plurality of positions. 1. A drawing apparatus for performing drawing on a substrate with a charged particle beam , the apparatus comprising:a controller configured to control a dose of the charge particle beam at each of a plurality of positions of the charged particle beam on the substrate based on information of displacement of each of the plurality of positions from a target position corresponding thereto and a target dose of the charged particle beam at the target position corresponding to each of the plurality of positions.2. The apparatus according to claim 1 , further comprising a detector configured to detect the charged particle beam claim 1 ,wherein the controller is configured to obtain the information based on an output from the detector.3. The apparatus according to claim 1 , further comprising a blanking device configured to perform blanking of the charged particle beam claim 1 ,wherein the controller is configured to control the dose by controlling the blanking device.4. The apparatus according to claim 1 , wherein the controller is configured to control the dose by controlling number of charged particle beams with which each of the plurality of positions are irradiated.5. The apparatus according to claim 1 , whereinthe drawing apparatus performs the drawing with a plurality of charged particle beams,the drawing apparatus comprises a projection system configured to project the plurality of charged particle beams on the substrate, andthe controller is configured to determine a projection ...

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13-01-2022 дата публикации

SINGLE BEAM PLASMA SOURCE

Номер: US20220013324A1
Автор: FAN Qi Hua

A single beam plasma or ion source apparatus, including multiple and different power sources, is provided. An aspect of the present apparatus and method employs simultaneous excitation of an ion source by DC and AC, or DC and RF power supplies. Another aspect employs an ion source including multiple magnets and magnetic shunts arranged in a generally E cross-sectional shape. 1. An ion source apparatus comprising:(a) an anode comprising at least one magnetic conductor and an open plasma area being located within a hollow central area of the anode;(b) a cathode comprising a cap having an outlet opening therethough;(c) a direct current power source connected to the anode;(d) an alternating current or radio frequency power source connected to the anode; and(e) ionization operably occurring within the plasma area inside the anode at least partially due to excitation by the direct and alternating current power sources.2. The apparatus of claim 1 , wherein the at least one magnetic conductor comprises multiple magnets or magnetic shunts which create a magnetic flux with a central dip in an open space wherein the plasma is created.3. The apparatus of claim 2 , wherein the magnets or magnetic shunts are arranged in a substantially E cross-sectional shape claim 2 , and with a body or the cap of the cathode being a magnetic metal.4. The apparatus of claim 1 , wherein:the cap of the cathode is magnetic and removable;the cap is isolated from a body of the anode which surrounds the at least one magnetic conductor of the anode; andan ion source discharge voltage is between 1-10 volts.5. The apparatus of claim 1 , further comprising:a sputtering source acted upon by ions emitted through the outlet opening; anda vacuum chamber within which is located the anode and the cathode, the chamber having an operating pressure of 1 mTorr to 500 mTorr.6. The apparatus of claim 1 , further comprising ions emitted through the outlet opening performing cleaning or evaporation deposition of thin ...

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07-01-2016 дата публикации

METHOD AND SYSTEM FOR ELECTRON MICROSCOPE WITH MULTIPLE CATHODES

Номер: US20160005566A1
Принадлежит:

An electron microscope system includes a laser system operable to generate an optical pulse and a pump pulse and a microscope column. The microscope column includes a multiple cathode structure having a plurality of spatially separated cathode regions. Each of the cathode regions are operable to generate an electron pulse. The microscope column also includes an electron acceleration region adjacent the multiple cathode structure, a specimen region operable to support a specimen, and a detector. 1. An electron microscope system comprising:a laser system operable to generate an optical pulse and a pump pulse; and a multiple cathode structure having a plurality of spatially separated cathode regions, each of the cathode regions being operable to generate an electron pulse;', 'an electron acceleration region adjacent the multiple cathode structure;', 'a specimen region operable to support a specimen; and', 'a detector., 'a microscope column including2. The electron microscope system of wherein the electron pulses from each of the cathode regions impinge on the specimen at a different time.3. The electron microscope system of wherein the optical pulse comprises a femtosecond ultraviolet pulse and the pump pulse comprises a femtosecond green pulse. [Other colors can and have been used]4. The electron microscope system of further comprising a first optical system operable to direct the femtosecond ultraviolet pulse to impinge on the multiple cathode structure and a second optical system operable to direct the femtosecond green pulse to impinge on the specimen.5. The electron microscope system of wherein the microscope column includes a suppressor in the electron acceleration region claim 1 , wherein control electronics coupled to the suppressor are operable to vary electron transit time from the cathode region to the specimen.6. The electron microscope system of wherein the plurality of spatially separated cathode regions are operated at different voltages.7. A method of ...

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07-01-2016 дата публикации

HIGH-SPEED MULTIFRAME DYNAMIC TRANSMISSION ELECTRON MICROSCOPE IMAGE ACQUISITION SYSTEM WITH ARBITRARY TIMING

Номер: US20160005567A1
Принадлежит:

An electron microscope is disclosed which has a laser-driven photocathode and an arbitrary waveform generator (AWG) laser system (“laser”). The laser produces a train of temporally-shaped laser pulses of a predefined pulse duration and waveform, and directs the laser pulses to the laser-driven photocathode to produce a train of electron pulses. An image sensor is used along with a deflector subsystem. The deflector subsystem is arranged downstream of the target but upstream of the image sensor, and has two pairs of plates arranged perpendicular to one another. A control system controls the laser and a plurality of switching components synchronized with the laser, to independently control excitation of each one of the deflector plates. This allows each electron pulse to be directed to a different portion of the image sensor, as well as to be provided with an independently set duration and independently set inter-pulse spacings. 1. An electron microscope comprising:a laser-driven photocathode;an arbitrary waveform generation (AWG) laser system for producing a train of temporally-shaped laser pulses of a predefined pulse duration and waveform, and arranged to direct the laser pulses to the laser-driven photocathode for producing a train of electron pulses;a first lens stack arranged to focus the train of electron pulses to a sample;a second lens stack producing a magnified image or diffraction pattern of the sample on an image sensor;a deflector subsystem having electrostatic deflector plates arranged downstream of the sample upstream of the image sensor, the deflector plates comprising a first pair of plates and a second pair of plates arranged perpendicular to the first pair of plates; anda control system in communication with both the AWG laser system and the deflector subsystem, the control system communicating with a plurality of switching components and synchronized with the AWG laser system for rapidly and reversibly switching voltage signals applied to each one ...

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04-01-2018 дата публикации

MULTI CHARGED PARTICLE BEAM WRITING APPARATUS AND MULTI CHARGED PARTICLE BEAM WRITING METHOD

Номер: US20180005799A1
Принадлежит: NuFlare Technology, Inc.

In one embodiment, a multi charged particle beam writing apparatus includes a blanking plate including a plurality of blankers, bitmap generation processing circuitry generating bitmap data for each writing pass of multi-pass writing, the bitmap data specifying irradiation time periods for a plurality of irradiation positions, a plurality of dose correction units configured to receive bitmap subdata items obtained by dividing the bitmap data from the bitmap generation processing circuitry, and correct the irradiation time periods to generate a plurality of dose data items corresponding to respective processing ranges, and data transfer processing circuitry transferring the plurality of dose data items to the blanking plate through a plurality of signal line groups. Each of the signal line groups corresponds to the blankers located in a predetermined region of the blanking plate. The data transfer processing circuitry changes the signal line groups, used to transfer the plurality of dose data items generated by the respective dose correction units, for each writing pass. 1. A multi charged particle beam writing apparatus comprising:a movable stage on which a substrate, serving as a writing target, is placed;an emitter emitting a charged particle beam;an aperture plate including a plurality of openings through which the charged particle beam passes to form multiple beams;a blanking plate including a plurality of blankers each performing blanking deflection on a corresponding one of the multiple beams;bitmap generation processing circuitry generating bitmap data for each writing pass of multi-pass writing, the bitmap data specifying irradiation time periods for a plurality of irradiation positions allocated to meshes obtained by virtually dividing a writing area of the substrate;a plurality of dose correction units configured to receive bitmap subdata items obtained by dividing the bitmap data from the bitmap generation processing circuitry, correct the irradiation ...

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07-01-2021 дата публикации

GeH4/Ar Plasma Chemistry For Ion Implant Productivity Enhancement

Номер: US20210005416A1
Принадлежит:

A method for improving the beam current for certain ion beams, and particularly germanium and argon, is disclosed. The use of argon as a second gas has been shown to improve the ionization of germane, allowing the formation of a germanium ion beam of sufficient beam current without the use of a halogen. Additionally, the use of germane as a second gas has been shown to improve the beam current of an argon ion beam. 1. A method of generating an argon ion beam , comprising:introducing germane and argon into an ion source;ionizing the germane and argon to form a plasma; andextracting argon ions from the ion source to form the argon ion beam, wherein a flow rate of germane is between 0.35 and 1.00 sccm.2. The method of claim 1 , wherein the ion source comprises an indirectly heated cathode ion source.3. The method of claim 1 , wherein the ion source comprises an RF ion source.4. The method of claim 1 , wherein the ion source comprises a Bernas source claim 1 , a capacitively coupled plasma source claim 1 , an inductively coupled source claim 1 , or a microwave coupled plasma source.5. The method of claim 1 , wherein no halogen gasses are introduced into the ion source.6. The method of claim 1 , wherein the ion source is a component of a beam-line implantation system.7. A method of generating an argon ion beam claim 1 , comprising:introducing germane and argon into an ion source;ionizing the germane and argon to form a plasma; and extracting argon ions from the ion source to form the argon ion beam,wherein a flow rate of germane is such that a beam current of the argon ion beam is increased at least 10% relative to an argon ion beam generated without use of germane at a same extraction current.8. The method of claim 7 , wherein a flow rate of germane is such that a beam current of the argon ion beam is increased at least 15% relative to the argon ion beam generated without use of germane at a same extraction current.9. The method of claim 7 , wherein no halogen gasses ...

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