Elektromagnetische Linse mit wenigstens zwei Polschuhen fuer Elektronenmikroskope

Strahlerzeugungssystem fuer Korpuskularstrahlapparate

Verfahren zum Erzeugen einer Schutzschicht auf einer Halbleiteranordnung mit mindestens einem p-n-UEbergang

Elektromagnetische Polschuhlinse

IONENSTRAHLGERÄT

IMPROVEMENTS IN ION-ELECTRON CONVERTERS

... 1,215,068. Ion and electron beam apparatus. COMPAGNIE D'APPLICATIONS MECANIQUES A L'ELECTRONIQUE AU CINEMA ET A L'ATOMISTIQUE. 3 April, 1968 [13 April, 1967], No. 16106/68. Heading H1D. An ion-electron converter comprises an envelope having a face with an aperture forming an entrance diaphragm for an incident ion beam, a target emitting electrons in response to the impact of ions, an arrangement, such as anode 3 and control electrode and cathode assembly 102, for forming the emitted electrons into a beam which is initially coincident with the ion beam, first and second electron-responsive devices arranged spaced off the axis of the ion beam, and a magnetic structure 10 which is operable to deflect the electron beam selectively into either the first or second electron-responsive device. As shown, the two electron-responsive devices comprise a luminescent screen 11 and the photographic film of a camera 22. The magnetic structure 10 operates as a magnetic prism and is built up from two isosceles ...

EXTRACTOR FOR A MICRO COLUMN AND ADJUSTMENT PROCEDURE FOR AN EXTRACTOR SCREEN ON AN ELECTRON EMITTER

Polschuhsystem einer Magnetlinse mit auswechselbarer Aperturblende in einem Korpuskularstrahlapparat.

Mehrstufiges Elektronenmikroskop.

Korpuskularstrahlapparat mit einer magnetischen Polschuhlinse.

Korpuskularstrahlapparat mit einem in der Anschlussleitung der Vakuumpumpe angeordneten Absperrhahn.

Verfahren und Vorrichtung zur Erzielung trägheitslos zu steuernder, auf scharf begrenzte Raumbereiche lokalisierter Energieumsetzungen sowie Anwendung des Verfahrens

Dreistufiges Korpuskularstrahlmikroskop.

Beleuchtungsoptik an Elektronenmikroskopen und andern Elektronengeräten.

Appareil d'optique électronique à faisceau fixe.

Uber den gesamten äusseren Umfang eines Elektromotors, insbesondere für handtragbare Werkzeugmaschinen, sich erstreckendes Grossflächenstaubfilter

Vorrichtung zur elektronenoptischen Untersuchung von Objektoberflächen

Korpuskularstrahlgerät, insbesondere Elektronenmikroskop mit einer Anordnung zum Entfernen und Einsetzen von Polschuhsystemen oder Teilen davon

Messeinrichtung mit einem Elektronenmikroskop

Apparatus with corpuscular rays

ELECTRODE D'EXTRACTION MOBILE POUR SOURCE D'IONS

ELECTRODE D'EXTRACTION MOBILE POUR SOURCE D'IONS. L'ELECTRODE EST MUNIE DE MOYENS MECANIQUE POUR COMMANDER DE L'EXTERIEUR DE L'ENCEINTE SON DEPLACEMENT, CES MOYENS COMPRENANT DEUX SYSTEMES APTES A DEPLACER INDEPENDAMMENT LES DEUX COTES LATERAUX DE L'ECRAN, CHACUN DE CES SYSTEMES COMPORTANT UN PARALLELOGRAMME DEFORMABLE ET UN MOYEN APTE A COMMANDER LA DEFORMATION DUDIT PARALLELOGRAMME. APPLICATION AUX IMPLANTEURS IONIQUES.

Improvements with the installations of welding by vacuum electronic bombardment

DEVICE FOR MOVING A BEAM OF CHARGED PARTICLES

Process for the realization of energy conversions ordered without inertia and located in areas of space strictly delimited

검사 방법 및 장치

... 전자빔 검사 장치로서, 복수의 전자빔 칼럼 - 상기 전자빔 칼럼 각각은 전자빔을 제공하고 대상물로부터 산란된 또는 2 차 전자를 검출하도록 구성됨 -; 및 하나 이상의 전자빔 칼럼을 다른 하나 이상의 전자빔 칼럼에 대해 이동시키도록 구성된 액추에이터 시스템 - 상기 액추에이터 시스템은 복수의 제 2 가동 구조들과 적어도 부분적으로 겹치는 복수의 제 1 가동 구조들을 포함하고, 상기 제 1 및 제 2 가동 구조들은 상기 복수의 전자빔 칼럼을 지지함 - 을 포함한다.

ELECTRON LENS FOR ELECTRON MICROSCOPE AND THE LIKE

Mikroskop mit elektrostatischen Linsen fuer Elektronen- und Ionenstrahlen

Apparatus for blanking a charged particle beam

A scanning electron microscope

... 1,065,847. Electron microscopes. UNITED STATES ATOMIC ENERGY COMMISSION. Dec. 24, 1963 [Nov. 22, 1963], No. 50928/63. Heading H1D. In a scanning electron microscope the electrons transmitted through the specimen are separated in an electrostatic analyzer into discrete energy levels. The electrons of particular energy levels are then detected by one or a plurality of scintillator detectors which are coupled via light piping to photo-multipliers the outputs of which are fed to one or a plurality of cathode-ray display tubes whose deflection systems are synchronized with those of the microscope. The microscope comprises an electron source 42 and an accelerating electrode 78, the gun chamber 44 being outgassed away from the microscope column proper. The accelerating electrode 78 is followed by a pair of perpendicularly arranged adjustable slits 82, 84 and a magnetic focusing lens system 90 which may be externally aligned with the microscope axis and comprises two sets of main focusing quadrupole ...

METHOD AND APPARATUS FOR DERIVING FROM A SCANNING ELECTRON MICROSCOPE SIGNALS THAT CAN BE LAYED STEREOSCOPICALLY

Electron microscope

Electron microscope or ionic on three floors

LANGBRENNWEITIGE MAGNETISCHE LINSE ZUR KORPUSKULARSTRAHLOPTISCHEN ABBILDUNG EINES GROSSFLAECHIGEN OBJEKTES

Improvements in corpuscular radiation instruments

... 1,023,104. Electron microscopes. SIEMENS & HALSKE A.G. Feb. 10, 1964 [Feb. 15, 1963], No. 5471/64. Heading H1D. An electron microscope which can also be used as a diffraction camera has a mechanism for moving the polepieces 6, 7 of the magnetic lens 3 longitudinally out of the bore 9 and then, by a swivelling action, out of the axis 16 of the beam. The polepiece system 5 is held in a holder 12 by pins 13 which engage longitudinal slots 17 in a fixed bush 15 of the holder 12 and inner threads 19 in a surrounding rotatable bush 20 so that on rotation of the bush 20 by means of the cog wheels 34, 35 and drive 11, the polepiece system is withdrawn without turning. The drive 11 also rotates a coupling part 29 around a shaft 27, and the shaft can be brought into operative connection with the coupling part 29 to effect a swivelling movement of the shaft and of the holder 12 fixed to it by an extension 15a. A coupling part 31, fixed to the shaft 27, is engaged with the coupling part 29 by means ...

Improvements in or relating to methods for the biological or therapeutic treatment of matter, and for carrying out chemical reactions

In a method for the biological or therapeutic treatment of matter or for the carrying out of a chemical reaction by bombardment with a beam of high energy electrons or other charged particles, the beam is brought out from a vacuum chamber under pressure of e.g. less than 10-2 mm., to a working chamber under atmospheric pressure, through one or more chambers under increasing pressures. The vacuum and intermediate chambers are connected to pumps, and the beam passes through fine apertures between chambers. The apparatus is described in Specification 777,426 (see Groups XL(c) and III). The apparatus may be used for sterilization of food or for promoting chemical reactions between gases, liquids and solids, and may involve ions of the beam e.g. protons or oxygen ions. The beam may also be used for the supervision of the chemical reaction initiated or maintained by it. Conclusions e.g. as regards partial pressures may be drawn from the diffusion of the beam. Specification 777,427 [Group XL(a ...

MAGNETIC LENS OF LONG FOCAL DISTANCE TO FORM, BY MEANS OF an OPTICAL SYSTEM HAS CORPUSCULAR BEAM, the IMAGE Of an OBJECT OF WIDE SURFACE

Electron microscope with sweeping

Improvements with the ionic image converters in electronic image

Improvements with the equipment for electron beam

Apparatus with corpuscular rays

Microscopes with electrostatic lenses for electronic and ionic rays

Irradiation system with ion beam and method to enhance accuracy of irradiation

Modulation of ion beam angle

Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle [theta] relative to a surface normal of the substrates and form gratings in the grating material.

GAS FIELD IONIZATION SOURCE AND ION BEAM DEVICE

Disclosed is a gas field ionization source (GFIS) that enables the inclination of an emitter chip to be adjusted, and the operation of which is stable and low cost. The gas field ionization source (GFIS) comprises a support body having a first reference surface perpendicular to the ion optical axis, a chip assembly comprising a base having an emitter chip and a second reference surface, and an inclined spacer positioned between the chip assembly and the support body. The inclined spacer has a fourth reference surface and a third reference surface that is inclined in relation to the fourth reference surface.

Movable extraction electrode for an ion source

The extraction electrode consists of a metallic screen provided with an opening and placed within a vacuum chamber in front of an ion source, the screen being brought to a negative potential with respect to the source. Displacement of the electrode is controlled from the exterior of the chamber by two mechanical systems for independent displacement of the two lateral sides of the screen. Each system comprises a deformable parallelogram pivotally coupled to a member for supporting one side of the screen and to a member which is slidably mounted on a guide column, and a mechanism for controlling the deformation of the parallelogram by means of a link-arm rigidly fixed at one end to a toothed wheel in mesh with an endless screw and control rod which is accessible from the exterior of the chamber. The invention is primarily applicable to the construction of ion implanters, especially for the fabrication of semiconductors.

Irradiation system ion beam and method to enhance accuracy of irradiation

The present invention is a method to enhance accuracy of irradiation with beam for an irradiation system with a beam. The irradiation system comprises a beam generation source, a mass analysis device, a beam transformer, a scanner which swings the beam reciprocally with high speed, a beam parallelizing device, an acceleration/deceleration device, an energy filtering device, and beam monitors. The beam transformer comprises a vertically focusing synchronized quadrupole electromagnet syQD and a horizontally focusing synchronized quadrupole electromagnet syQF. Consequently, it is possible to correct at least one of a deviation in beam divergence angle and a deviation in beam size within a range between a center trajectory and an outer trajectory after swinging of the beam by the scanner.

Beam optical component having a charged particle lens

The present invention relates to a beam optical component including a charged particle lens for focusing a charged particle beam, the charged particle lens comprising a first element having a first opening for focusing the charged particle beam; a second element having a second opening for focusing the charged particle beam and first driving means connected with at least one of the first element and the second element for aligning the first opening with respect to the second opening. With the first driving means, the first opening and the second opening can be aligned with respect to each other during beam operation to provide a superior alignment of the beam optical component for a better beam focusing. The present invention also relates to a charged particle beam device that uses said beam optical component for focusing the charged particle beam, and a method to align first opening and second opening with respect to each other.

Magnetlinsensystem fuer Korpuskularstrahlapparate

VERFAHREN ZUR JUSTIERUNG DER POLSCHUHE EINER MAGNETISCHEN OBJEKTLINSE EINES RASTER-KORPUSKULARSTRAHLMIKROSKOPS

ELEKTRONENMIKROSKOP

KORPUSKULARSTRAHLGERAET ZUR WAHLWEISEN ABBILDUNG EINES PRAEPARATS ODER SEINER BEUGUNGSDIAGRAMMS, INSBESONDERE ELEKTROMIKROSKOP

Apparatus for blanking a charged particle beam

Apparatus for blanking an electron or ion beam comprises a pair of blanking plates 2,3. A stopper 4 is mechanically and electrically connected to one blanking plate. By applying a suitable bias to the plates 2,3 and stopper 4, a beam 7 passing between the plates is deflected so that electrons or ions are stopped by the stopper 4. The stopper 4 may comprise a cavity 6 into which electrons or ions are deflected, the cavity 6 having a knife edge at its entrance. The cavity 6 may be formed by drilling a hole in the plate 2 from one face, chamfering the edge of the face and attaching a wedge to the chamfer to cover a part of the entrance of the hole. Alternatively, the cavity may be formed by drilling an angled hole from one face which stops a given distance form the opposite face, and then cutting a recess in the opposite face which breaks through to the hole.

Apparatus for the electron-optical inspection of the surfaces of objects

... 1,031,028. Electron microscopes. TRUB, TAUBER & CIE A.G. Sept. 8, 1964 [Sept. 18, 1963], No. 36713/64. Heading H1D. Electron diffraction apparatus, such as described in Specification 971,080, is combined with an electron emission microscope comprising, in succession from the specimen 4, an intermediate electrode 17, an anode 18 an anode diaphragm 19, a projector lens 20, 32, which may be electromagnetic, and a fluorescent screen 21, the whole system projecting transversely from the main housing of the apparatus. The electrode 17 may be held via terminal 23 at a high voltage relative to that of the housing 24. Centring devices 27, 28 are provided for the anode 18 and anode screen 19 of the emission microscope while the whole emission microscope system may be displaced longitudinally, by means of device 29, for rough focusing, or for complete withdrawal. A centring device 16 with a spherical seating surface is provided for the whole system thereby enabling limited rotation of the system with ...

DEVICE TO BLANKINGS OF A JET OF CHARGED PARTICLES

METHOD AND APPARATUS FOR DERIVING FROM A SCANNING ELECTRON MICROSCOPE SIGNALS THAT CAN BE LAYED STEREOSCOPICALLY

Electron beam welding machine - for making circular welds between two coaxial parts, gun travelling round a circle

Pistol for welding a tube onto a plate

Irradiation system with ion beam and method to enhance accuracy of irradiation

The present invention is a method to enhance accuracy of irradiation with beam for an irradiation system with a beam. The irradiation system comprises a beam generation source, a mass analysis device, a beam transformer, a scanner which swings the beam reciprocally with high speed, a beam parallelizing device, an acceleration/deceleration device, an energy filtering device, and beam monitors. The beam transformer comprises a vertically focusing synchronized quadrupole electromagnet syQD and a horizontally focusing synchronized quadrupole electromagnet syQF. Consequently, it is possible to correct at least one of a deviation in beam divergence angle and a deviation in beam size within a range between a center trajectory and an outer trajectory after swinging of the beam by the scanner.

Irradiation system with ion beam and automatic tuning system

CHARGED PARTICLE BEAM ALIGNMENT DEVICE

PURPOSE: To make a mechanism compact and make possible to adjust misalignment of particle beam by constructing a charged particle beam drawing electrode so that it is movable in three dimensions of X, Y, Z axes and finely adjusting alignment of iron beam drawn out. CONSTITUTION: A specimen is changed to plasma in a plasma chamber by interaction of a microwave and a magnetic field, and ions are drawn out with a negative electrode 5 and their distribution is measured with a Faraday cup. The negative electrode 5 is supported in a hollow supporter 8 which passes a particle beam through an insulator 6 and a heat insulating material 7. The negative electrode 5 is moved to each direction with driving mechanisms 9W11 of X, Y, and Z axes which are installed in a cover 13 of a vacuum container 12, and misalignment of particle beams is corrected so as to maximize a current of the Faraday cup. Therefore, because the electrode driving mechanisms are installed in the vacuum container 12, high vacuum ...

OPTICAL DEVICE FOR CHARGED PARTICLES

PURPOSE: To change the diameter of a spot produced on the sample by the ion beam without causing no positional shift by using a device for moving an electrostatic focusing lens installed between the ion source and the sample. CONSTITUTION: An electrostatic lens 8 for focusing an ion beam 7 is located between an ion gun 6 and a sample 10 in an optical lens for charged particles used for an ion implantation device or a similar device. The focusing lens 8 consists of a lens electrode 8a which can be vertically moved on a rail 9a and lens electrodes 8d and 8c which can be moved parallel to the lens electrode 8a. Because of the above structure, the focal distance can be changed by moving the lens electrode 8a while fixing the positions of the lens electrodes 8d and 8c. And, the spot diameter can be changed by moving the electrodes 8b and 8c while fixing the position of the lens electrode 8a. COPYRIGHT: (C)1986,JPO&Japio ...

Elektronenbeschussvorrichtung

Vorrichtung zur Ablenkung des Elektronenstrahls in Elektronenmikroskopen

Mit magnetischen Polschuhlinsen arbeitendes Elektronenmikroskop

UEber den gesamten aeusseren Umfang eines Elektromotors, insbesondere fuer handgetragene Werkzeugmaschinen, sich erstreckendes Grossflaechenstaubfilter

Pattern-definition device for maskless particle-beam exposure apparatus

A deflection chamber for an electron microscope

... 1,127,543. Electron microscopes. NIHON DENSHI K.K. 21 Sept., 1966 [28 Sept., 1965], No. 42248/66. Heading H1D. A deflection chamber 32 mounted adjacent the specimen holder 19 of an electron microscope contains a deflection coil 26 through which the electron beam passes movable by means 33 outside the chamber to allow access to the holder by specimen exchange means 15 controllable from outside the chamber. A specimen chamber housing 2 containing chamber 32 and an auxiliary specimen annex chamber 13 is arranged between condenser and object lenses 10, 37 in evacuable column 1 of the microscope also containing a first deflection coil 5. The holder 19 is mounted in a stage 20 movable on ball bearings 35. Specimens are exchanged using the evacuable chamber 13 having a cover 12 and lid 23. Exchange means 15 comprise a rod 15 movably mounted in cover 12. The deflection coil 26 and lid 23 are mounted on a frame 21 which can be moved on a guide plate 45, the coil can also be rotated by knob 33. The ...

Improvements in or relating to Corpuscular Beam Apparatus

... 1,193,159. Electron microscopes. MAX-PLANCK-GES. ZUR FÍRDERUNG DER WISSENSCHAFTEN E.V. 5 Oct., 1967 [24 Feb., 1967], No. 45412/67. Heading H1D. A plurality of selectable polepiece systems 27, 35 is provided in the first condenser lens of a corpuscular beam apparatus comprising a beam source, a first condenser lens, a final condenser lens disposed between the first condenser lens and an objective lens, and a field-limiting aperture of which the final condenser forms an image on a specimen, the size, the axial position of the lens gap in each of said polepiece systems being such that the axial position of the first image of the beam source is the same for each of said polepiece systems. A turntable 36 supporting four polepiece systems is rotated around a spindle 37 by a gear-wheel 44 connected by a shaft 41 to a knob 38. The bearing pressure between the complete electromagnetic lens system and a plate 55 is reduced by sprung balls 56 and a chamber 54 which can be selectively connected to ...

ELECTRODE Of MOBILE EXTRACTION FOR SOURCE Of IONS

Electron microscope

Angular aligning device for electronic image projection - electro mechanical aligning system using piezoelectric effect for movement

With magnetic pole piece lenses -working electron microscope

TECHNIQUES FOR PREVENTING PARASITIC BEAMLETS FROM AFFECTING ION IMPLANTATION

Techniques for preventing parasitic beamlets from affecting ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for preventing parasitic beamlets from affecting ion implantation. The apparatus may comprise a controller that is configured to scan a spot beam back and forth, thereby forming an ion beam spanning a predetermined width. The apparatus may also comprise an aperture mechanism that, if kept stationary, allows the spot beam to pass through. The apparatus may further comprise a synchronization mechanism, coupled to the controller and the aperture mechanism, that is configured to cause the aperture mechanism to move in synchronization with the scanned spot beam, allowing the scanned spot beam to pass through but blocking one or more parasitic beamlets associated with the spot beam.

Movable anode structure

Long focal length magnetic lens for the optical imaging of a specimen having a large surface area

An improved magnetic lens having a long focal length for the optical imaging of a specimen having a large surface area by means of a charged-particle beam. The lens includes a cylindrical coil including at least one winding which is surrounded by a field-carrying metallic shell member fabricated of magnetic material disposed at the radially outer surface of winding. The improvement of the invention comprises a first ring member disposed on the radially outer surface of the metallic shell member approximately in the plane of the center of gravity of the lens; a plurality of slidable shoe members disposed on a lower surface of the first ring member; a housing fabricated of magnetic material surrounding the lens and including an annular shoulder on the radially inner surface thereof; a second ring member fabricated of non-magnetic material disposed on the annular shoulder for supporting the slidable shoe members, the shoe members being disposed between the first and second ring members; and ...

Apparatus for blanking a charged particle beam

A beam blanking unit (1) comprises first and second blanking plates (2, 3) mounted to a support plate (15). A stopper (4) is mechanically and electrically connected to the first blanking plate (2).

Dynamische Druckstufenstrecke zur UEberfuehrung eines Korpuskular-strahlbuendels aus Raeumen niederen Gasdruckes in Raeume hoeheren Gasdruckes

ELEKTRONISCHES VAKUUM-SCHWEISSGERAET.

VORRICHTUNG ZUM AUSTASTEN EINES STRAHLS GELADENER TEILCHEN

Apparatus for blanking a charged particle beam

Electro-magnetic lens assembly

... 920,231. Electron lenses. TESLA, NARODNI PODNIK. Feb. 14, 1961 [Feb. 25, 1960], No. 5421/61. Class 39 (1). An electromagnetic lens assembly for electronoptical instruments comprises a body 1 supporting at least two polepieces 6, 8, wherein one polepiece, 6, is firmly fixed in the opening of the lens body, while the other polepiece 8, formed by a plate which is provided with an opening 81 and mounted above the first polepiece 6, is movable in a plane at right angles to the axis of the first polepiece, wherein the plate is fitted with a control device 10, 11, which is brought out vacuum-tightly to the exterior surface of the electron lens body and effects movement of the plate 8 relative to the other polepiece 6. More than one control device may be provided to enable the plate to be shifted in any required direction within its plane.

Improvements in or relating to apparatus for bombarding matter

... In apparatus for bombarding matter with a beam of high energy electrons or other charged particles, e.g. for carrying out chemical reactions, the beam is brought out from a vacuum chamber 1 under pressure of e.g. less than 10-2 mm., to a working chamber 31 under atmospheric pressure through one or more chambers 7 under increasing pressures. The vacuum and intermediate chambers are connected to pumps, and the beam passes through fine apertures between chambers. Each aperture is situated at a density minimum of the jet of gas formed by the next preceding aperture (see Group XL(a)). Specifications 777,427 [Group XL (a)] and 777,428 are referred to.

semiconductor element and method for manufacturing same

LENTILLE MAGNETIQUE DE GRANDE DISTANCE FOCALE POUR FORMER, AU MOYEN D'UN SYSTEME OPTIQUE A FAISCEAU CORPUSCULAIRE, L'IMAGE D'UN OBJET DE SURFACE ETENDUE

L'invention concerne une lentille magnétique de grande distance focale pour former, au moyen d'un système optique à faisceau corpusculaire, l'image d'un objet de surface étendue. Ce dispositif est constitué par une lentille 1 comportant un revêtement en fer 9 guidant le champ et à l'extérieur duquel est ménagé un anneau 15 qui prend appui par une bague 17 à l'intérieur d'un boîtier 2 entourant ladite lentille, qui peut être déplacée en vue du réglage désiré, au moyen de trois broches de réglage 28 traversant le boîtier 2 et prenant appui contre l'anneau 15. Application notamment aux microprojecteurs optiques à faisceau corpusculaire.

Device for the examination of surfaces of object in electronic microscopy

Electromagnetic lens with electrons with mechanism to regulate outside the opening of passage of the electron beam

Electron beam welding very long nuclear fuel cans - where tubular body is evacuated and rotated at both ends

전극 조정 어셈블리 및 전극을 조정하기 위한 방법

... 전극 조정 방법 및 전극 조정 어셈블리가 작업물 프로세싱에서의 사용을 위해 개시된다. 어셈블리는 제 1 및 제 2 단부(126, 128)들을 갖는 전극 어셈블리(124)를 포함할 수 있다. 제 1 및 제 2 조종기들(130, 132)은 제 1 및 제 2 단부들에 결합될 수 있다. 조종기들은 전극들을 통과하는 이온 빔의 하나 이상의 특성들을 조정하기 위해 전극 어셈블리의 제 1 및 제 2 단부들에 움직임을 선택적으로 부여하기 위해 사용될 수 있다. 전극의 제 1 및 제 2 단부들이 서로에 독립적으로 조정될 수 있도록 제 1 및 제 2 조정기들은 독립적으로 작동할 수 있다. 개시된 장치를 이용하는 방법들이 또한 개시된다.

Method and apparatus for inspection

DEVICE FOR PRODUCING AN ELECTRON BEAM

The invention relates to a device (20) for producing an electron beam (4), which comprises a hot cathode (1), a cathode electrode (2), an anode electrode (3) having an opening (6) through which an electron beam (4) produced by the device can pass, wherein during the operation of the device (20) a voltage for accelerating the electrons exiting from the hot cathode (1) is applied between the cathode electrode (2) and the anode electrode (3), and further comprising deflection means that can deflect the electron beam (4) that has passed through the opening of the anode electrode (3), wherein the deflection means comprise at least one deflection electrode (8, 12), which can reflect the electron beam (4) and/or which comprises a deflection surface (9) that is inclined towards the propagation direction of the electron beam (4).

DOUBLE ENDED ELECTRODE MANIPULATOR

An electrode adjustment method and apparatus are disclosed for use in workpiece processing. The assembly may include an electrode assembly (124) having first and second ends (126, 128). First and second manipulators (130, 132) may be coupled to the first and second ends. The manipulators may be used to selectively impart movement to the first and second ends of the electrode assembly to adjust one or more properties of an ion beam passing through the electrodes. The first and second manipulators may be independently actuatable so that the first and second ends of the electrode can be adjusted independent of one another. Methods of using the disclosed apparatus are also disclosed.

A MULTI-BEAM ION/ELECTRON SPECTRA-MICROSCOPE

This invention is a multi-beam charged particle instrument that can simultaneously focus electrons and a variety of positive and negative ions, such as Gallium, Oxygen and Cesium ions, onto the same material target. In addition, the instrument has provision to simultaneously capture the spectrum of both secondary electrons and ions. The highly dispersive, high resolution mass spectrometer portion of the instrument is expected to detect and identify secondary ion species across the entire range of the periodic table, and also record a portion of their emitted energy spectrum. The electron energy spectrometer part of the instrument is designed to acquire the entire range of scattered electrons, from the low energy secondary electrons through to the elastic backscattered electrons.

METHOD AND APPARATUS FOR CONTROLLING AN ELECTROSTATIC LENS ABOUT A CENTRAL RAY TRAJECTORY OF AN ION BEAM

A method of controlling deflection of a charged particle beam in an electrostatic lens (700) includes establishing a symmetrical electrostatic lens configuration comprising a plurality of electrodes (714, 716) disposed at unadjusted positions (L1) that are symmetric with respect to the central ray trajectory (702) with applied unadjusted voltages that create fields symmetric with respect to the central ray trajectory. A symmetric electric field is calculated corresponding to the set of unadjusted voltages. A plurality of lower electrodes (716) is arranged at adjusted positions (L2) that are asymmetric with respect to the central ray trajectory. A set of adjusted voltages is obtained for the plurality of lower electrodes, wherein the set of adjusted voltages corresponds to a set of respective potentials of the symmetric electric field at respective adjusted asymmetric positions. The adjusted voltages are applied to the asymmetric lens configuration when the charged particle beam passes therethrough ...

IONENSTRAHLGERÄT

Korpuskularstrahlapparat, insbesondere Elektronen- oder Ionenmikroskop

Method for Axial Alignment of Charged Particle Beam and Charged Particle Beam System

A method for axial alignment of a charged particle beam relative to at least three stages of multipole elements and a charged particle beam system capable of making the axial alignment. Some parts of the orbit of the beam or the distributions of three astigmatic fields, or both, are simultaneously translated in a direction perpendicular to the optical axis such that astigmatisms of the same order and same type due to axial deviations between successive ones of the astigmatic fields cancel.

Charged particle beam writing apparatus and method of same

A charged particle beam writing apparatus, includes a unit to input information about a stripe region height, and to judge, when a write region is divided into stripe regions in a thin rectangular shape by the stripe region height, whether a height of a last stripe region is narrower than the stripe region height; and a unit to divide the write region into stripe regions in the thin rectangular shape in such a way that the last stripe region and a stripe region prior to the last stripe region are combined to create one stripe region and stripe regions at least two stripe regions prior to the last stripe region are each created as stripe regions of the stripe region height if the height of the last stripe region is narrower than the stripe region height.

Charged particle beam device provided with automatic aberration correction method

Disclosed is an aberration measurement method of a charged particle beam device provided with an aberration corrector ( 4 ). The method is characterized by: when measuring aberration, (A) the number of pixels or the resolution is changed of a first image and a second image that are benchmarks when measuring field of view offset, and after determining the destination of movement resulting from a rough field of view offset, the number of pixels or the resolution of the first image and the second image are set to the same conditions, and the amount of field of view offset is measured precisely, or (B) a sample having lines in the horizontal direction and in the vertical direction is one-dimensionally scanned, and the amount of movement is measured from the signal position offset. As a result, in a charged particle beam device provided mounted with an aberration corrector, it becomes possible to provide a highly precise aberration measurement method that is not to the detriment of measurement time.

Aberration Correction Device and Charged Particle Beam Device Employing Same

To provide an aberration correction device and a charged particle beam device employing same that are jointly usable with a tunneling electron microscope (TEM) and a scanning tunneling electron microscope (SEM), an aberration correction device () comprises, between a TEM objective lens () and an STEM objective lens (): a transfer lens group (), for transferring a coma-free surface () of the TEM objective lens () to a multipolar lens (); a transfer lens group () for transferring the coma-free surface of the TEM objective lens to a multipolar lens (); and a transfer lens () for correcting fifth-order spherical aberration of the STEM objective lens (). 1. An aberration correction device comprising:a first multipole lens disposed adjacent to an illumination lens;a second multipole lens disposed adjacent to a projection lens;a plurality of first transfer lenses disposed between the first and second multipole lenses and configured to transfer, to the second multipole lens, a coma-free condition of a first objective lens disposed adjacent to the illumination lens;a plurality of second transfer lenses disposed so as to be closer to the illumination lens than the first multipole lens and configured to transfer the coma-free condition of the first objective lens to the first multipole lens; anda third transfer lens disposed so as to be closer to the projection lens than the second multipole lens and configured to correct a fifth-order spherical aberration of a second objective lens disposed adjacent to the projection lens.2. A charged particle beam device comprising:a charged particle source;an illumination lens configured to adjust an amount of a beam of charged particles emitted by the charged particle source;a projection lens configured to project the charged particles that have passed through a specimen, onto detection means;a first objective lens;an aberration correction device; anda second objective lens,wherein the first objective lens, the aberration correction device ...

Transmission Electron Microscope

A transmission electron microscope () includes an electron beam source (), an illumination lens (), an objective lens (), an intermediate lens system (), a pair of transfer lenses () located behind the intermediate lens system (), and an energy filter () for separating the electrons of the beam L transmitted through the specimen (S) according to energy. The transfer lenses () transfer the first image to the entrance crossover plane (S) of the energy filter () and to transfer the second image to the entrance image plane (A) of the filter (). An image plane (A) is formed between the first transfer lens () and the second transfer lens (). 1. A transmission electron microscope comprising:an electron beam source producing an electron beam;an illumination lens via which the electron beam from the electron beam source is directed at a specimen;an objective lens for forming a focused first image from the electron beam transmitted through the specimen;an intermediate lens system for forming a focused second image from the electron beam transmitted through the specimen;a pair of transfer lenses disposed behind the intermediate lens system, the pair of transfer lenses being made up of a first transfer lens and a second transfer lens; andan energy filter for separating the electrons of the electron beam transmitted through the specimen according to energy,wherein the transfer lenses act to transfer the first image to an entrance crossover plane of the energy filter and to transfer the second image to an entrance image plane of the energy filter; andwherein an image plane is formed between the first transfer lens and the second transfer lens of the pair of transfer lenses.2. A transmission electron microscope as set forth in claim 1 , wherein a detector for detecting electrons scattered by the specimen is disposed at said image plane between said first and second transfer lenses.3. A transmission electron microscope as set forth in claim 1 , wherein an entrance aperture for ...

Method for setting an operating parameter of a particle beam device and a sample holder for performing the method

A method for adjusting an operating parameter of a particle beam device and a sample holder, which is suitable in particular for performing the method are provided. An adjustment of an operating parameter of a particle beam device is possible without transfer of the sample holder out of the particle beam device. A reference sample is placed in a first sample receptacle, so that in ongoing operation of the particle beam device, the sample holder need only be positioned in such a way that the reference sample is bombarded and measured with the aid of a particle beam generated in the particle beam device.

CHARGED PARTICLE OPTICAL EQUIPMENT AND METHOD FOR MEASURING LENS ABERRATION

Beam scanning for obtaining a scanned image is performed by an aberration corrector, which is an aberration measured lens, and a scanning coil disposed above an objective lens, instead of a scanning coil ordinarily placed on the objective lens. Thus, distortion with an aberration of an aberration measured lens is scanned on the surface of a sample, and then a scanned image is formed from a scattered electron beam, a transmission electron beam, or a reflected/secondary electron beam that is generated by the scan, achieving a scanning aberration information pattern equivalent to a conventional Ronchigram. Such means is a feature of the present invention. 1. A method for measuring a lens aberration in a charged particle optical device including means that focuses an electron beam for two-dimensional scanning on a sample ,the charged particle optical device comprising:an electron source that emits an electron beam; sample mounting means for mounting the sample; electromagnetic lenses disposed between the electron source and the sample mounting part;electron beam scanning means that is provided on an electron-optical upstream side of aberration measured lenses of the electromagnetic lenses, and scans and deflect the electron beam;beam diaphragm means that is provided upstream of the electron beam scanning means and focuses the electron beam to a predetermined beam diameter;detecting means that detects an electron signal induced from the sample by the electron beam impinging onto the sample; andcontrol means that controls the electron source, the electromagnetic lenses, the electron beam scanning means, and the detecting means,wherein the electron beam scanning means upstream of the measured lenses scans the electron beam from the electron source so as to two-dimensionally scan a beam probe on a surface of the sample, the beam probe being formed by the electromagnetic lenses,the detecting means detects at least one of signals including a secondary electron, a reflected ...

MULTIPOLE AND CHARGED PARTICLE RADIATION APPARATUS USING THE SAME

In order to realize a multiple assembled easily with high accuracy, a multipole having assembly accuracy within 10 micrometer and within several seconds of angle is achieved by fixing multipole elements by being guided by grooves provided on an inner side of a cylindrical housing to form the multipole. 1. A multipole comprising a plurality of multipole elements , multipole members including the plurality of multipole elements integrally with a rod , and a cylindrical housing having an opening at a center portion therethrough so as to allow a charged particle radiation to pass therethrough , wherein the cylindrical housing includes a plurality of grooves parallel to a direction of an optical axis on a circumference of an inner wall of the opening , and the multipole members are arranged so as to be fixed by being fitted into the grooves.2. The multipole according to claim 1 , wherein the plurality of multipole elements are formed to have a multistage formed on the rod at predetermined intervals so that distal end portions thereof are oriented in the same direction claim 1 , the cylindrical housing is provided with the grooves at both end portions of the inner wall of the opening claim 1 , the thickness of the inner wall at an intermediate portion of the cylindrical housing is formed to be thinner than the thickness of the inner wall of the both end portions claim 1 , the multipole members are fixed to the cylindrical housing between the grooves and the multipole elements at the both end portions from among the multistage multipole elements formed on the rod.3. The multipole according to claim 2 , wherein the multipole elements are formed by using a soft magnetic metal material or a soft magnetic metal material and a no-magnetic metal material claim 2 , and the multipole members fixedly arrange the plurality of multipole elements at predetermined intervals parallel to the optical axis with insulating members interposed therebetween.4. The multipole according to claim ...

Method of Axial Alignment of Charged Particle Beam and Charged Particle Beam System

A method of axially aligning a charged particle beam implemented by a charged particle beam system equipped with an astigmatic correction lens including a first pair of coils and a second pair of coils. The method starts with obtaining first to sixth sets of image data while varying currents flowing through the first to fourth coils according to first to sixth sets of conditions. Then, the values of the currents through the first to fourth coils for correcting the position of the axis of the beam are calculated based on the first to sixth sets of image data.

Method of Investigating and Correcting Aberrations in a Charged-Particle Lens System

A system of investigating aberrations in a charged-particle lens system, which lens system has an object space comprising an object plane and an image space comprising an image plane, includes: 1. A method of investigating aberrations in a charged-particle lens system , the lens system having an object space comprising an object plane and an image space comprising an image plane , whereby an object placed on said object plane can be imaged by the lens system onto said image plane , the lens system further having an entrance pupil , the method comprising:selecting a fixed pivot point on said object plane;directing a charged-particle beam through said pivot point, entrance pupil and lens system and onto said image plane, said beam having a relatively small cross-sectional area relative to the area of the entrance pupil;changing the orientation of said beam through said pivot point, so as to trace out an entrance figure on said entrance pupil and a corresponding image figure on said image plane;registering said image figure;repeating this procedure at a series of different focus settings of the lens system, thus acquiring a set of registered image figures at different focus settings; andanalyzing said set so as to derive lens aberrations therefrom.2. The method according to claim 1 , wherein said analyzing step comprises performing a mathematical fit of said set to a collection of theoretical image figures predicted using a mathematical model.3. The method according to claim 2 , wherein said mathematical model describes wavefront deformation by the lens system in terms of localized alterations in phase and phase gradient per point on a wavefront claim 2 , using a two-dimensional function.4. The method according to claim 3 , wherein said two-dimensional function is expanded as a Taylor Series claim 3 , whose coefficients yield information on the magnitude of various lens aberrations.5. The method according to claim 1 , wherein said series of different focus settings ...

Method and System for Edge-of-Wafer Inspection and Review

An electron-optical system for inspecting or reviewing an edge portion of a sample includes an electron beam source configured to generate one or more electron beams, a sample stage configured to secure the sample and an electron-optical column including a set of electron-optical elements configured to direct at least a portion of the one or more electron beams onto an edge portion of the sample. The system also includes a sample position reference device disposed about the sample and a guard ring device disposed between the edge of the sample and the sample position reference device to compensate for one or more fringe fields. One or more characteristics of the guard ring device are adjustable. The system also includes a detector assembly configured to detect electrons emanating from the surface of the sample. 1. A system comprising:an electron beam source configured to generate one or more electron beams;a sample stage configured to secure a sample;an electron-optical column including a set of electron-optical elements configured to direct at least a portion of the one or more electron beams onto an edge portion of the sample;a detector assembly configured to detect electrons emanating from the sample; anda controller, wherein the controller is communicatively coupled to one or more portions of at least one of the electron beam source, the set of electron-optical elements of the electron optical column or the stage, wherein the controller is configured to:receive one or more parameters representative of one or more characteristics of the one or more electron beams at an edge portion of the sample;generate a look-up table for compensating for one or more fringe fields within the electron-optical system; andadjust one or more characteristics of the electron-optical system based on the generated look-up table.2. The system of claim 2 , wherein the controller is communicatively coupled to a stigmator of the electron optical column claim 2 , wherein the controller is ...

METHOD AND APPARATUS FOR INSPECTION

An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns. The actuator system may include a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns. 1. An electron beam inspection apparatus , comprising:a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, each electron beam column arranged to inspect an area of a different respective field or die associated with the electron beam column; andan actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns.2. The apparatus of claim 1 , wherein the actuator system is configured to change a pitch of the plurality of electron beam columns.3. The apparatus of claim 1 , wherein the plurality of electron beam columns is arranged in a two-dimensional array and the actuator system is configured to change a position of an electron beam column in a first direction and in a second direction substantially orthogonal to the first direction.4. The apparatus of claim 1 , wherein each electron beam column is movable independently of the other electron beam columns.5. The apparatus of claim 1 , wherein the plurality of electron beam columns comprises at least 30 electron beam columns.6. The apparatus of claim 1 , further comprising a non-transitory computer program product comprising machine-readable instructions configured to cause relative movement between the object and the electron beam columns such ...

PARTICLE BEAM FOCUSING

Apparatus and methods are disclosed for particle beam focusing, suitable for use in sample preparation or test environments, including SEM-based nanoprobing platforms. With a particle beam incident on a sample surface, stage current is used as an indicator of spot size. By scanning or searching settings of a working distance control, a control value having maximum (or minimum) stage current is used to set the beam waist at the sample surface. Alternatively, minima (or maxima) of reflected current can be used. Stigmator controls can be adjusted similarly to reduce astigmatism. The scan of control settings can be performed concurrently with sweeping the beam across a region of interest on the sample. Curved sweep patterns can be used. Energy measurements can be used as an alternative to current measurement. Applications to a nanoprobing workflow are disclosed. 1. An apparatus comprising:a particle beam source configured to direct a particle beam onto a surface of a sample, the particle beam source having a control for shaping the particle beam;one or more hardware processors with memory coupled thereto, the one or more hardware processors further coupled to the particle beam source; scan the control while making spatially unresolved measurements of a current or energy derived from incidence of the particle beam on the surface of the sample; and', 'focus the particle beam at the surface of the sample based on at least one magnitude of the measured current or energy., 'wherein the memory stores instructions that, when executed by the one or more hardware processors, cause the one or more hardware processors to2. The apparatus of claim 1 , wherein the instructions further cause the one or more hardware processors to:identify a distance from an objective lens to the surface of the sample based on the at least one magnitude of the measured current or energy; andwherein the focusing the particle beam is based on the identified distance.3. The apparatus of claim 1 , wherein ...

Electron microscope with improved imaging resolution

Disclosed herein are electron microscopes with improved imaging. An example electron microscope at least includes an illumination system, for directing a beam of electrons to irradiate a specimen, an elongate beam conduit, through which the beam of electrons is directed; a multipole lens assembly configured as an aberration corrector, and a detector for detecting radiation emanating from the specimen in response to said irradiation, wherein at least a portion of said elongate beam conduit extends at least through said aberration corrector and has a composite structure comprising an outer tube of electrically insulating material, and an inner skin of electrically conductive material with an electrical conductivity σ and a thickness t, with σt<0.1 Ω −1 .

METHOD FOR AUTOMATIC CORRECTION OF ASTIGMATISM

The method is for automatic astigmatism correction of a lens system. A first image is provided that is not in focus at a first stigmator setting of a set of lenses. A calculating device calculates a corresponding first Fourier spectrum image. A distribution and direction of pixels of the Fourier spectrum image are determined by calculating a first vector and a second vector. The first vector is compared with the second vector. The lens system is changed from a first stigmator setting to a second stigmator setting to provide a second image. A corresponding Fourier spectrum image is calculated. The distribution and direction of pixels of the second Fourier spectrum image is determined by calculating a third vector and a fourth vector. The third vector is compared to the fourth vector. The image that has the lowest vector ratio is selected. 1. A method for automatic astigmatism correction of a lens system , comprising ,providing a first image of a view not being in focus at a first stigmator setting of a lens,based on the first image at the first stigmator setting,a calculating device calculating a first Fourier spectrum image,determining a distribution and directions of intensities in the image by calculating a first vector and a second vector,comparing the first vector with the second vector, changing the lens from the first stigmator setting to a second stigmator setting to provide a second image of the view not being in focus, the second image at the second stigmator setting being of the same view as the first image of the view at the first stigmator setting,the calculating device, calculating a second Fourier spectrum image based on the second image at the second stigmator setting,determining the distribution and directions of intensities in the second Fourier spectra image by calculating a third vector and a fourth vector,comparing the third vector with the fourth vector,when the first vector is more similar to the second vector than the third vector is to the ...

Multistage-Connected Multipole, Multistage Multipole Unit, and Charged Particle Beam Device

Provided are a multistage-connected multipole and a charged particle beam device that can be produced with precision in machining without requiring precision in brazing between a pole and an insulation material. This multi-stage connected multipole comprises: a plurality of poles Q-Q that are arranged along the optical-axis direction of a charged particle beam, and that have cutouts Non surfaces facing each other; and braces P-P that are arranged between the plurality of poles Q-Q and are made of an insulator. The poles Q-Q and the braces P-P are joined by fitting the braces P-P into the cutouts N and applying brazing so as to be interposed by a bonding material. 1. A multistage-connected multipole comprising:a plurality of poles disposed along an optical axis direction of a charged particle beam and having a notch in opposed surfaces; anda pillar disposed between the poles and comprised of an insulator,wherein the poles and the pillars are joined with each other in the notches via a joining material.2. A multistage-connected multipole according to claim 1 , further comprising:a cap joined to the notch via the joining material,wherein the pillar is joined to the pole via the cap.3. The multistage-connected multipole according to claim 2 ,wherein the pillar and the cap include a protruded portion and a recessed portion that can be engaged with each other.4. The multistage-connected multipole according to claim 1 ,wherein a material of an insulator constituting the pillar is ceramic, andwherein the joining material is a brazing material.5. The multistage-connected multipole according to claim 1 ,wherein a plurality of end faces of the poles at least on one end side are in a shape in accordance with one plane.6. The multistage-connected multipole according to claim 5 ,wherein before the pillar is joined via the joining material, the poles are connected to one connecting portion and are formed as a single pole base material together with the connecting portion.7. The ...

Charged Particle Beam Device and Aberration Corrector

An aberration corrector includes a mirror that corrects an aberration of a charged particle beam, a beam separator, and a bypass optical system in the beam separator. The beam separator includes an entrance of the charged particle beam and an exit from which the charged particle beam is emitted to an objective lens, and separates an incident trajectory from the entrance to the mirror and a reflection trajectory from the mirror to the exit from each other by deflecting the charged particle beam in an ON state. The bypass optical system is disposed at a position at which the trajectory of the charged particle beam bypasses when the beam separator is in the ON state, and the trajectory of the charged particle beam passes when the beam separator is in an OFF state, and controls the charged particle beam so that objective lens optical conditions in a trajectory via the mirror and a trajectory passing through the bypass optical system coincide with each other. 1. A charged particle beam application apparatus which irradiates a sample with a charged particle beam generated from a charged particle beam source , the apparatus comprising:a charged particle beam source;an aberration corrector that is disposed downstream the charged particle beam source;an objective lens that is disposed downstream the aberration corrector; anda control unit that controls the aberration corrector,wherein the aberration corrector includesa mirror that corrects aberration of the charged particle beam from the charged particle beam source,a beam separator that includes an entrance on which the charged particle beam from the charged particle beam source is incident and an exit from which the charged particle beam is emitted to the objective lens, and separates an incident trajectory on the mirror from the entrance and a reflection trajectory from the mirror to the exit from each other by deflecting the charged particle beam in an ON state, anda bypass optical system that is disposed at a position ...

ABERRATION-CORRECTED MULTIBEAM SOURCE, CHARGED PARTICLE BEAM DEVICE AND METHOD OF IMAGING OR ILLUMINATING A SPECIMEN WITH AN ARRAY OF PRIMARY CHARGED PARTICLE BEAMLETS

A charged particle beam device for inspection of a specimen with an array of primary charged particle beamlets is described. The charged particle beam device includes a charged particle beam source to generate a primary charged particle beam; a multi-aperture plate having at least two openings to generate an array of charged particle beamlets having at least a first beamlet having a first resolution on the specimen and a second beamlet having a second resolution on the specimen; an aberration correction element to correct at least one of spherical aberrations and chromatic aberrations of rotational symmetric charged particle lenses; and an objective lens assembly for focusing each primary charged particle beamlet of the array of primary charged particle beamlets onto a separate location on the specimen. 121.-. (canceled)22. A charged particle beam device for inspection of a specimen with an array of primary charged particle beamlets , comprising:a charged particle beam source to generate a primary charged particle beam;a multi-aperture plate having at least two openings to generate an array of primary charged particle beamlets having at least a first beamlet having a first resolution on the specimen and a second beamlet having a second resolution on the specimen;an aberration correction element to correct at least one of spherical aberrations and chromatic aberrations of rotationally symmetric charged particle lenses, the aberration correction element being arranged such that the primary charged particle beamlets enter the aberration correction element at a first end and exit at an opposite end; andan objective lens assembly for focusing each primary charged particle beamlet of the array of primary charged particle beamlets onto a separate location on the specimen.23. The charged particle beam device according to claim 22 , wherein the aberration correction element is configured to correct the difference between the first resolution on the specimen and the second ...

Beam Irradiation Device

The present disclosure aims at proposing a multi-beam irradiation device capable of correcting off-axis aberrations. In order to achieve the above object, a beam irradiation device is proposed, which includes a beam source which emits a plurality of beams; an objective lens () which focuses a beam on a sample; a first lens () which is arranged such that a lens main surface is positioned at an object point of the objective lens and deflects a plurality of incident beams toward an intersection point of a lens main surface of the objective lens and an optical axis; a second lens () which is arranged closer to a beam source side than the first lens and focuses the plurality of beams on a lens main surface of the first lens; and a third lens () which is arranged closer to the beam source side than the second lens and deflects the plurality of beams toward an intersection point of a lens main surface of the second lens and the optical axis. 1. A beam irradiation device comprising:a chip configured to emit an electron;an aperture lens array formed of a plurality of electrodes having a plurality of openings configured to divide a beam emitted from the chip into a plurality of beams;one or more power supplies configured to apply a voltage to at least one of the plurality of electrodes; anda first lens arranged on a side closer to a sample than the aperture lens array or arranged between the chip and the aperture lens array, the first lens being configured to focus a beam emitted from the chip,wherein an intensity of the first lens and an intensity of the aperture lens array are adjusted so that the beam divided after passing through the aperture lens array focus on a same plane perpendicular to an optical axis.2. The beam irradiation device according to claim 1 ,wherein a radius of an opening of an electrode disposed nearest to a chip side among the plurality of electrodes is not more than half of a radius of the opening of other electrodes.3. The beam irradiation device ...

MACHINE LEARNING ON WAFER DEFECT REVIEW

This disclosure is directed to solutions of detecting and classifying wafer defects using machine learning techniques. The solutions take only one coarse resolution digital microscope image of a target wafer, and use machine learning techniques to process the coarse SEM image to review and classify a defect on the target wafer. Because only one coarse SEM image of the wafer is needed, the defect review and classification throughput and efficiency are improved. Further, the techniques are not distractive and may be integrated with other defect detecting and classification techniques. 1. A method , comprising:obtaining a first microscope image of a first part of a wafer, the first microscope image having a first resolution;identifying a target region on the first part;obtaining a second image of the target region from the first microscope image; andgenerating a third image of the target region based on the second image of the target region through a deep learning process, the third image having a second resolution that is finer than the first resolution.2. The method of claim 1 , where in the identifying the target region includes:obtaining a reference image of the first part of the wafer based on wafer design information of the wafer;comparing the first microscope image with the reference image to determine a mismatch between the first microscope image and the reference image on a second part of the wafer that is contained within the first part; andidentifying the second part of the wafer as the target region.3. The method of claim 2 , wherein the obtaining the reference image simulates a side effect of a fabrication process on a shape of a feature formed based on the wafer design information.4. The method of claim 2 , wherein the first microscope image includes a defect portion and a non-defect portion.5. The method of claim 4 , wherein the reference image is obtained based on the non-defect portion of the first microscope image.6. A system claim 4 , comprisinga ...

Electron Beam Observation Device, Electron Beam Observation System, and Image Correcting Method and Method for Calculating Correction Factor for Image Correction in Electron Beam Observation Device

The objective of the present invention is to reduce differences between individual electron beam observation devices accurately by means of image correction. This method for calculating a correction factor for correcting images between a plurality of electron beam observation devices; in electron beam observation devices which generate images by scanning an electron beam across a specimen, is characterized by including: a step in which a first electron beam observation device generates a first image by scanning a first electron beam across first and second patterns, on either a specimen including the first pattern and the second pattern, having a different shape or size to the first pattern, or a first specimen including the first pattern and a second specimen including the second pattern; a step in which a second electron beam observation device generates a second image by scanning a second electron beam across the first and second patterns; and a step in which the first or second electron beam observation device calculates a correction factor at a peak frequency extracted selectively from first and second frequency characteristics calculated on the basis of the first and second images. 120.-. (canceled)21. A correction factor calculation method in an electron beam observation device for correcting images among a plurality of the electron beam observation devices each of which generates an image by irradiating an electron beam over a specimen , the method comprising the steps of:allowing a first electron beam observation device to generate a first image data by irradiating a first electron beam over a first pattern and a second pattern differing from the first pattern in a shape or a size, in which the first pattern and the second pattern are included in a specimen, or the first pattern is included in a first specimen and the second pattern is included in a second specimen;allowing a second electron beam observation device to generate a second image data by ...

SYSTEMS AND METHODS FOR COMPENSATING DISPERSION OF A BEAM SEPARATOR IN A SINGLE-BEAM OR MULTI-BEAM APPARATUS

Systems and methods are provided for compensating dispersion of a beam separator in a single-beam or multi-beam apparatus. Embodiments of the present disclosure provide a dispersion device comprising an electrostatic deflector and a magnetic deflector configured to induce a beam dispersion set to cancel the dispersion generated by the beam separator. The combination of the electrostatic deflector and the magnetic deflector can be used to keep the deflection angle due to the dispersion device unchanged when the induced beam dispersion is changed to compensate for a change in the dispersion generated by the beam separator. In some embodiments, the deflection angle due to the dispersion device can be controlled to be zero and there is no change in primary beam axis due to the dispersion device. 1. A charged particle beam apparatus comprising:a source configured to provide a primary charged particle beam;a source conversion unit configured to form a plurality of parallel images of the source using a plurality of beamlets of the primary charged particle beam;a first projection system with an objective lens and configured to project the plurality of parallel images onto a sample and therefore form a plurality of primary probe spots thereon with the plurality of beamlets;a beam separator configured to separate the plurality of beamlets and a plurality of secondary charged particle beams generated from the sample by the plurality of primary probe spots;a detection device with a plurality of detection elements;a secondary projection system configured to focus the plurality of secondary charged particle beams onto the detection device and form a plurality of secondary probe spots thereon, and the plurality of secondary probe spots are detected by the plurality of detection elements; and 'wherein the first dispersion device comprises a first electrostatic deflector and a first magnetic deflector respectively exerting a first force and a second force on each of the plurality of ...

PROCESSING APPARATUS AND METHOD USING A SCANNING ELECTRON MICROSCOPE

The present invention provides a processing apparatus using a scanning electron microscope, which includes the scanning electron microscope having an electron optical system radiating and scanning a focused electron beam on a sample placed on a stage to image the sample, and an image processing/control section which controls the scanning electron microscope and processes the image obtained by imaging with the scanning electron microscope. The electron optical system of the scanning electron microscope has image shift electrodes comprised of electrostatic electrodes, the image shift electrodes moving a position at which to apply the focused electron beam onto the sample with the stage stopped to thereby shift a region in which the sample is to be imaged. 1. A processing apparatus using a scanning electron microscope , comprising:the scanning electron microscope having an electron optical system for imaging a sample, the electron optical system radiating and scanning a focused electron beam on the sample placed on a stage; andan image processing/control section which controls the scanning electron microscope and processes an image obtained by imaging with the scanning electron microscope, whereinthe electron optical system of the scanning electron microscope has image shift electrodes comprised of electrostatic electrodes, the image shift electrodes moving a position at which to apply the focused electron beam onto the sample with the stage stopped to thereby shift a region in which the sample is to be imaged.2. The processing apparatus according to claim 1 , wherein the image processing/control section applies a signal to the image shift electrodes claim 1 , the applied signal correcting an aberration of the electron beam generated by shifting the imaging region of the sample with the image shift electrodes claim 1 , the applied signal also correcting a positional displacement of the stopped stage.3. The processing apparatus according to claim 1 , whereinthe electron ...

Electron optical system and multi-beam image acquiring apparatus

An electron optical system includes an electromagnetic lens configured to include a yoke, and refract an electron beam passing through the yoke by generating a magnetic field, and a shield coil disposed along the inner wall of the yoke, and configured to reduce a leakage magnetic field generated by the electromagnetic lens.

Particle-optical corrector which is free from axial aberrations of sixth order and electron microscope with corrector

A corrector has a strength of a central hexapole field (Ψ) which is selected such that the threefold axial astigmatism (A) vanishes and the strengths of two equal outer hexapole fields (Ψ) are selected such that the overall corrector () does not have a sixfold axial astigmatism (As). The length (L) of the central multipole element () in relation to the lengths (L) of the multipole elements ( and ) is chosen such that the axial three-lobed aberration of sixth order (D) vanishes. A separation between the outer multipole elements ( and ) and round lenses (″) further spaced apart from a symmetry plane () of the corrector corresponds to the focal length (f′) of those round lenses (″) plus an additional separation (Δz) which is chosen such that the axial three-lobed aberration of fourth order (D) vanishes for the given lengths L and L′. 118.-. (canceled)19. A particle-optical corrector for correcting spherical aberrations of an electron microscope , thereby preventing a threefold axial astigmatism , an axial three-lobed aberration of fourth order and a sixfold axial astigmatism , wherein the corrector comprises:a first outer multipole element of length L′ for generating a first hexapole field;a second central multipole element of length L for generating a second hexapole field in a symmetry plane of the corrector;a third outer multipole element of length L′ for generating a third hexapole field, wherein said first outer multipole element and said third outer multipole element are identical and said first and said third hexapole fields have identical strengths, wherein a strength of said second hexapole field is selected with respect to strengths of said first and said third hexapole fields such that the threefold axial astigmatism vanishes, said strengths of said first and said third hexapole fields thereby being selected such that the corrector does not have the sixfold axial astigmatism;a first round lens doublet having a first doublet first round lens and a first ...

Method and System for Edge-of-Wafer Inspection and Review

An electron-optical system for inspecting or reviewing an edge portion of a sample includes an electron beam source configured to generate one or more electron beams, a sample stage configured to secure the sample and an electron-optical column including a set of electron-optical elements configured to direct at least a portion of the one or more electron beams onto an edge portion of the sample. The system also includes a sample position reference device disposed about the sample and a guard ring device disposed between the edge of the sample and the sample position reference device to compensate for one or more fringe fields. One or more characteristics of the guard ring device are adjustable. The system also includes a detector assembly configured to detect electrons emanating from the surface of the sample. 1. A electron-optical system comprising:an electron beam source configured to generate one or more electron beams;a sample stage configured to secure a sample;an electron-optical column including a set of electron-optical elements configured to direct at least a portion of the one or more electron beams onto an edge portion of the sample;a sample position reference device disposed about the sample;a guard ring device disposed between the edge of the sample and the sample position reference device to compensate for one or more fringe fields, wherein one or more characteristics of the guard ring device are adjustable; anda detector assembly configured to detect electrons emanating from the surface of the sample.2. The system of claim 1 , wherein the guard ring device comprises:a conductive ring structure.3. The system of claim 1 , wherein the guard ring device comprises:a ring structure coated with a conductive material.4. The system of claim 1 , wherein the one or more adjustable characteristics of the guard ring device comprises:a height of the guard ring device.5. The system of claim 4 , wherein the one or more adjustable characteristics of the guard ring ...

SYSTEM AND METHOD FOR BARE WAFER INSPECTION

A wafer inspection system includes a controller in communication with an electron-beam inspection tool. The controller includes circuitry to: acquire, via an optical imaging tool, coordinates of defects on a sample; set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects; determine a position of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scanning of the sample; adjust the coordinates of the defects based on the determined positions of the subset of the defects; and set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates.

CHARGED PARTICLE BEAM APPARATUS

In recent years, a range of users for a charged particle beam apparatus such as a scanning electron microscope has been broadened. All users want to learn a manual adjustment technology, but it is very difficult to adjust all parameters for observation to have an appropriate value. Therefore, a beginner is unlikely to sufficiently show a performance of an apparatus. This disclosure aims to provide the charged particle beam apparatus including a parameter adjustment practice function for allowing any user to easily learn the manual adjustment technology. 1. A charged particle beam apparatus which requires a focus adjustment and a stigma adjustment when observing a sample , comprising:a lens system that focuses a charged particle beam on the sample;an X-stigmator that adjusts an X-stigma;Y-stigmator that adjusts a Y-stigma;a control unit that controls the focus adjustment of the objective lens, an X-stigma adjustment of the X-stigmator and a Y-stigma adjustment of the Y-stigmator;a storage unit that stores a practice-purpose image corresponding to each group of the focus adjustment, the X-stigma adjustment and the Y-stigma adjustment which are determined in advance;an operation unit that sets the focus adjustment, the X-stigma adjustment and the Y-stigma adjustment according to a user's operation; anda display unit that displays the practice-purpose image read out from the storage unit corresponding to the group of the focus adjustment, the X-stigma adjustment and the Y-stigma adjustment which are set by the operation unit.2. The charged particle beam apparatus according to claim 1 ,wherein with regard to the focus adjustment, the X-stigma adjustment and the Y-stigma adjustment, a sequence of the adjustments is designated.3. The charged particle beam apparatus according to claim 2 ,wherein the sequence of the adjustments is designated such that the focus adjustment is performed prior to the X-stigma adjustment and the Y-stigma adjustment.4. The charged particle beam ...

Accurate wavelength calibration in cathodoluminescence sem

A scanning electron microscope having a spectrometer with a sensor having a plurality of pixels, wherein the spectrometer directs different wavelengths of collected light onto different pixels. An optical model is formed and an error function is minimized to find values for the model, such that wavelength detection may be corrected using the model. The model can correct for errors generated by effects such as the motion of the electron beam over the specimen, aberrations introduced by optical elements, and imperfections of the optical elements. A correction function may also be employed to account for effects not captured by the optical model.

ELECTRON BEAM DEVICE AND IMAGE ACQUISITION METHOD

According to one embodiment, an electron beam device includes a support which supports the sample and an electrode disposed below the sample on the support The electrode is for applying a voltage to the sample and includes a plurality of columnar electrodes that can be independently controlled to apply different voltages to portions of the sample. A controller for generating correction data for correcting the distribution of an electric field generated across the area of the sample. The correction data is generated based on structure information indicating a structure of the sample. The controller controls the plurality of columnar electrodes to apply local voltages set based on the correction data. 1. An electron beam device for acquiring an image of a sample , the electron beam device comprising:a support on which a sample can be supported;an electrode for applying voltages to the sample being supported by the support, the electrode being between the sample and the support, the electrode including a plurality of columnar electrodes which can each be independently controlled to apply a different voltage; and{'claim-text': ['generate correction data for adjusting the distribution of an electric field generated in the sample when a voltage is applied to the sample via the electrode, the correction data being based on structure information indicating a structure of the sample, and', 'control the plurality of columnar electrodes to apply local voltages set based on the correction data.'], '#text': 'a controller configured to:'}2. The electron beam device according to claim 1 , whereinthe sample has a flat surface portion and a raised portion which protrudes from the flat surface portion, andthe plurality of columnar electrodes are in positions corresponding to the position of the raised portion.3. The electron beam device according to claim 1 , wherein each of the columnar electrodes is movable to change a vertical distance between the respective columnar electrode and ...

Correction of Short-Range Dislocations in a Multi-Beam Writer

Method for computing an exposure pattern for exposing a desired pattern on a target in a charged-particle lithography apparatus, in which a particle beam is directed to and illuminates a pattern definition device comprising an aperture array composed of a plurality of blanking apertures through which said particle beam penetrates for writing said desired pattern by exposing a multitude of pixels within an exposure area on the target, said method taking into account a spatially dependent distortion of the target within the exposure area, with respect to dislocations transversal to the direction of the particle beam.

ABERRATION MEASUREMENT METHOD AND ELECTRON MICROSCOPE

An aberration measurement method for an objective lens in an electron microscope including an objective lens which focuses an electron beam that illuminates a specimen, and a detector which detects an electron beam having passed through the specimen, includes: introducing a coma aberration to the objective lens; measuring an aberration of the objective lens before introducing the coma aberration to the objective lens; measuring an aberration of the objective lens after introducing the coma aberration to the objective lens; and obtaining a position of an optical axis of the objective lens on a detector plane of the detector based on measurement results of the aberration of the objective lens before and after introducing the coma aberration. 1. An aberration measurement method for an objective lens in an electron microscope comprising an objective lens which focuses an electron beam that illuminates a specimen , and a detector which detects an electron beam having passed through the specimen , the aberration measurement method comprising:introducing a coma aberration to the objective lens;measuring an aberration of the objective lens before introducing the coma aberration to the objective lens;measuring an aberration of the objective lens after introducing the coma aberration to the objective lens; andobtaining a position of an optical axis of the objective lens on a detector plane of the detector based on measurement results of the aberration of the objective lens before and after introducing the coma aberration.2. The aberration measurement method according to claim 1 ,wherein, in obtaining the position of the optical axis of the objective lens, the position of the optical axis of the objective lens on the detector plane is obtained based on a change in an apparent aberration before and after introducing the coma aberration.3. The aberration measurement method according to claim 2 ,wherein, in obtaining the position of the optical axis of the objective lens, a ...

CHARGED PARTICLE BEAM APPARATUS

There is provided a charged particle beam apparatus including: a charged particle source; a condenser lens and an object lens for converging a charged particle beam from the charged particle source and irradiating the converged charged particle beam to a specimen; and plural image shift deflectors for deflecting the charged particle beam. In the charged particle beam apparatus, the deflection of the charged particle beam is controlled using first control parameters that set the optical axis of a charged particle beam to a first optical axis that passes through the center of the object lens and enters a predefined position of the specimen, and second control parameters that transform the first control parameters so that the first control parameters set the optical axis of the charged particle beam to a second optical axis having a predefined incident angle different from the incident angle of the first optical axis. 1. A charged particle beam apparatus comprising:a charged particle source for generating a charged particle beam;a specimen mounting table for mounting a specimen;a condenser lens and an object lens for converging the charged particle beam and irradiating the converged charged particle beam to the specimen;a plurality of image shift deflectors for deflecting the charged particle beam;a control unit; anda storage unit,wherein the storage unit stores first control parameters that set the optical axis of a charged particle beam to a first optical axis that passes the object lens center of the object lens and enters a predefined position of the specimen, and second control parameters that transform the first control parameters so that the first control parameters set the optical axis of the charged particle beam from the first optical axis to a second optical axis that enters the specimen with a predefined incident angle different from the incident angle of the first optical axis, andthe control unit controls the deflection of the charged particle beam ...

Apparatus and Method for Correcting Arrayed Astigmatism in a Multi-Column Scanning Electron Microscopy System

A multi-beam scanning electron microscopy (SEM) system is disclosed. The system includes an electron beam source configured to generate a source electron beam. The system includes a set of electron-optical elements configured to generate a flood electron beam from the source electron beam. The system includes a multi-beam lens array with a plurality of electron-optical pathways configured to split the flood electron beam into a plurality of primary electron beams, and a plurality of electrically-charged array layers configured to adjust at least some of the plurality of primary electron beams. The system includes a set of electron-optical elements configured to direct at least some of the plurality of primary electron beams onto a surface of a sample secured by a stage. The system includes a detector array configured to detect a plurality of electrons emanated from the surface of the sample in response to the plurality of primary electron beams. 1. A multi-beam scanning electron microscopy (SEM) system , comprising:an electron beam source configured to generate a source electron beam;a first set of electron-optical elements configured to generate a flood electron beam from the source electron beam; a plurality of electron-optical pathways configured to split the flood electron beam into a plurality of primary electron beams; and', 'a plurality of electrically-charged array layers configured to adjust at least some of the plurality of primary electron beams;, 'a multi-beam lens array, comprisinga second set of electron-optical elements configured to direct at least some of the plurality of primary electron beams onto a surface of a sample;a stage configured to secure the sample; anda detector array configured to detect a plurality of electrons emanated from the surface of the sample in response to the plurality of primary electron beams.2. The system in claim 1 , wherein the electron beam source comprises:an electron emitter and an extractor.3. The system in claim 1 ...

ELECTRON EMITTER DEVICE WITH INTEGRATED MULTI-POLE ELECTRODE STRUCTURE

A field emission device comprises one or more emitter elements, each having a high aspect ratio structure with a nanometer scaled cross section; and one or more segmented electrodes, each surrounding one of the one or more emitters. Each of the one or more segmented electrodes has multiple electrode plates. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 1. A field emission device , comprising:one or more emitter elements, each element having a high aspect ratio structure with a nanometer scale cross section; andone or more segmented electrodes, each electrode surrounding a corresponding one of the one or more emitter elements, wherein each of the one or more segmented electrodes includes multiple electrode plates.2. The device of claim 1 , wherein the one or more segmented electrodes are provided behind tips of corresponding emitters.3. The device of claim 1 , wherein the one or more segmented electrodes are provided proximate to tips of corresponding emitters within a distance of two emitter lengths.4. The device of claim 1 , wherein each of the one or more emitters are in a length between about 100 nanometers and about 1 millimeter and a cross-sectional dimension between about 10 nanometers (nm) and about 1 micron (μm).5. The device of claim 1 , wherein the one or more emitter elements are nanotubes.6. The device of claim 1 , wherein the electrode plates are electrically isolated from each other.7. The device of claim 1 , wherein the one or more segmented electrodes have 4 claim 1 , 8 claim 1 , 12 or 16 electrode plates.8. A method claim 1 , comprising:forming one or more emitter elements on a substrate, wherein each of the one or more emitter elements has a high aspect ratio structure with a nanometer scale ...

APPARATUS OF PLURAL CHARGED-PARTICLE BEAMS

One modified source-conversion unit and one method to reduce the Coulomb Effect in a multi-beam apparatus are proposed. In the modified source-conversion unit, the aberration-compensation function is carried out after the image-forming function has changed each beamlet to be on-axis locally, and therefore avoids undesired aberrations due to the beamlet tilting/shifting. A Coulomb-effect-reduction means with plural Coulomb-effect-reduction openings is placed close to the single electron source of the apparatus and therefore the electrons not in use can be cut off as early as possible. 1. (canceled)2. A source-conversion unit of an electron source that emits an electron beam ,the source-conversion unit comprising:a micro-deflector array that facilitates creation of a plurality of images of the electron source, each of the images being associated with a corresponding beamlet of a plurality of beamlets that are derived from the electron beam; and a micro-compensator array that facilitates adding aberration to each of the beamlets.3. The source-conversion unit of claim 2 , further comprising:a beamlet limiting component that includes a plurality of beamlet limiting apertures, each of the apertures to limit a corresponding beamlet of the plurality of beamlets.4. The source-conversion unit of claim 2 ,wherein the micro-deflector array includes a plurality of micro-deflectors,wherein the micro-compensator array includes a plurality of micro-compensators, andwherein each of the micro-deflectors facilitates creation of a corresponding image of the plurality of images.5. The source-conversion unit of claim 4 ,wherein each of the micro-compensators facilitates adding an aberration to a corresponding beamlet of the plurality of beamlets.6. The source-conversion unit of claim 4 ,wherein the plurality of micro-compensators facilitates adding a plurality of aberrations to the plurality of beamlets, each of the micro-compensators facilitates adding a corresponding aberration of the ...

CHROMATIC ABERRATION CORRECTOR AND ELECTRON MICROSCOPE

The chromatic aberration corrector () has a first multipole element () for producing a first electromagnetic field and a second multipole element () for producing a second electromagnetic field. The first multipole element () first, second, and third portions () arranged along an optical axis (OA) having a thickness and producing a quadrupole field in which an electric quadrupole field and a magnetic quadrupole field are superimposed. In the first and third portions (), the electric quadrupole field is set stronger than the magnetic quadrupole field. In the second portion (), the magnetic quadrupole field is set stronger than the electric quadrupole field. The second portion () produces a two-fold astigmatism component that is opposite in sign to two-fold astigmatism components produced by the first portion () and third portion (). 1. A chromatic aberration corrector for use with an electron microscope , said chromatic aberration corrector comprising:a first multipole element for producing a first electromagnetic field; anda second multipole element for producing a second electromagnetic field,wherein said first multipole element has a first portion, a second portion, and a third portion arranged along an optical axis;wherein each of the first portion, second portion, and third portion has a thickness in the direction of travel of an electron beam and produces a quadrupole field in which an electric quadrupole field and a magnetic quadrupole field are superimposed;wherein in said first portion, the electric quadrupole field is set stronger than the magnetic quadrupole field;wherein in said second portion, the magnetic quadrupole field is set stronger than the electric quadrupole field;wherein in said third portion, the electric quadrupole field is set stronger than the magnetic quadrupole field;wherein said second portion produces a two-fold astigmatism component that is opposite in sign to two-fold astigmatism components produced by the first and third portions; ...

Particle-Optical Systems and Arrangements and Particle-Optical Components for such Systems and Arrangements

A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity.

Method of Acquiring Dark-Field Image

A method of acquiring a dark-field image for a scanning transmission electron microscope is provided. The scanning transmission electron microscope includes a dark-field detector having an annular detection region which is capable of detecting electrons scattered at a specimen in a predetermined angular range, an objective lens, and an imaging lens group disposed at a stage following the objective lens. The method includes reducing an influence of a geometrical aberration on the electrons scattered in the predetermined angular range by shifting a focus of the imaging lens group from a diffraction plane of the objective lens. 1. A method of acquiring a dark-field image for a scanning transmission electron microscope ,the scanning transmission electron microscope comprising:a dark-field detector having an annular detection region configured to detect electrons scattered at a specimen in a predetermined angular range;an objective lens; andan imaging lens group disposed at a stage following the objective lens,the method comprising:reducing an influence of a geometrical aberration on the electrons scattered in the predetermined angular range by shifting a focus of the imaging lens group from a diffraction plane of the objective lens.2. The method of acquiring a dark-field image according to claim 1 , whereinthe scanning transmission electron microscope further comprises an imaging system deflector that deflects an electron beam transmitted through the specimen, andthe method further comprises correcting, with use of the imaging system deflector, a deviation of the electron beam from an optical axis generated by shifting the focus of the imaging lens group from the diffraction plane of the objective lens.3. The method of acquiring a dark-field image according to claim 1 , wherein the imaging lens group comprises an intermediate lens and a projector lens that are disposed at a stage following the objective lens.4. The method of acquiring a dark-field image according to ...

Method and System for Focus Adjustment of a Multi-Beam Scanning Electron Microscopy System

A scanning electron microscopy system is disclosed. The system includes a multi-beam scanning electron microscopy (SEM) sub-system. The SEM sub-system includes a multi-beam electron source configured to form a plurality of electron beams, a sample stage configured to secure a sample, an electron-optical assembly to direct the electron beams onto a portion of the sample, and a detector assembly configured to simultaneously acquire multiple images of the surface of the sample. The system includes a controller configured to receive the images from the detector assembly, identify a best focus image of images by analyzing one or more image quality parameters of the images, and direct the multi-lens array to adjust a focus of one or more electron beams based on a focus of an electron beam corresponding with the identified best focus image. 1. A multi-beam scanning electron microscopy apparatus comprising: a multi-beam electron source configured to form a plurality of electron beams;', 'a sample stage configured to secure a sample;', 'an electron-optical assembly including a set of electron-optical elements configured to direct at least a portion of the plurality of electron beams onto a portion of the sample; and', 'a detector assembly configured to simultaneously acquire a plurality of images of the surface of the sample, each image associated with an electron beam of the plurality of electron beams;, 'a multi-beam scanning electron microscopy sub-system comprising receive the plurality of images from the detector assembly;', 'identify at least one of a best focus image or a best astigmatism image of the plurality of images by analyzing one or more image quality parameters of at least some of the images of the plurality of the images; and', 'direct the multi-beam source to adjust at least one of focus or astigmatism of one or more electron beams based on at least one of focus or astigmatism of an electron beam corresponding with at least one of the identified best focus ...

CHARGED PARTICLE BEAM DEVICE

Deflection of a secondary beam, and astigmatism correction of a primary beam or of the secondary beam are carried out using a multi-pole electromagnetic deflector which deflects the path of the secondary beam toward a detector. 1. A charged particle beam device comprising:a charged particle gun that produces a primary beam;a stage on which a sample is placed;a detector that detects a secondary beam generated from the sample in response to the primary beam;a multi-pole electromagnetic deflector that deflects a path of the secondary beam; anda control circuit that controls the multi-pole electromagnetic deflector, wherein{'claim-text': ['electric field deflectors that generate an electric field, and', 'magnetic field deflectors of which number is the same as the number of the electric field deflectors and which generate a magnetic field,'], '#text': 'the multi-pole electromagnetic deflector includes'}{'claim-text': ['electric field deflector drive circuits, each driving the electric field deflector,', 'a first astigmatism correction common voltage generating unit that controls the electric field deflector and outputs a first astigmatism correction voltage for carrying out astigmatism correction of the primary beam or the secondary beam,', 'magnetic field deflector drive circuits, each driving the magnetic field deflector,', 'a second astigmatism correction common voltage generating unit that controls the magnetic field deflector and outputs a second astigmatism correction voltage for carrying out astigmatism correction of the primary beam or the secondary beam,', 'an electric field-magnetic field common control voltage generating unit that outputs a deflection common voltage for deflecting a path of the secondary beam to the detector to the electric field deflector drive circuit and the magnetic field deflector drive circuit,', 'a first adder that adds the deflection common voltage and the first astigmatism correction voltage input directly or after adjustment and ...

Charged particle beam apparatus

A computing unit generates a to-be-used-in-computation netlist on the basis of a to-be-used-in-calculation device model corresponding to a correction sample, estimates a first application result, on the basis of the to-be-used-in-computation netlist and an optical condition, when a charged particle beam is applied to the correction sample under the optical condition, compares the first application result and a second application result based on a detection signal when the charged particle beam is applied to the correction sample under the optical condition, and corrects the optical condition when the first application result and the second application result differ from each other.

MINIATURE ELECTRON BEAM LENS ARRAY USE AS COMMON PLATFORM EBEAM WAFER METROLOGY, IMAGING AND MATERIAL ANALYSIS SYSTEM

An apparatus includes at least one electron beam column, with an electron emitter source, a gun lens focusing electrons from the electron emitter source into an electron beam, and a final beam forming aperture. Each electron beam column includes one or more of a double Wein filter disposed along a trajectory of the electron beam between the gun lens and the final beam forming aperture, and a dispersion corrector disposed along a trajectory of the electron beam after the final beam forming aperture. 1. An apparatus comprising:at least one electron beam column, comprising an electron emitter source, a gun lens focusing electrons from the electron emitter source into an electron beam, and a final beam forming aperture; a double Wein filter disposed along a trajectory of the electron beam between the gun lens and the final beam forming aperture; and', 'a dispersion corrector disposed along a trajectory of the electron beam after the final beam forming aperture., 'each electron beam column comprising one or more of2. The apparatus of claim 1 , the dispersion corrector configured to generate 2D dispersion corrections synchronized with a scanning signal for the electron beam column.3. The apparatus of claim 1 , the double Wein filter configured to generate a static energy filtering signal claim 1 , the static energy filtering signal not synchronized with a scanning signal for the electron beam column.4. The apparatus of claim 1 , the dispersion corrector comprising two 2D electrostatic deflectors and one 2D magnetic deflector.5. The apparatus of claim 4 , the one 2D magnetic deflector being disposed between the two 2D electrostatic deflectors along the trajectory of the electron beam.6. The apparatus of claim 1 , the dispersion corrector comprising two 2D magnetic deflectors and one 2D electrostatic deflector.7. The apparatus of claim 6 , the one 2D electrostatic deflector being disposed between the two 2D magnetic deflectors along the trajectory of the electron beam.8. ...

CHARGED-PARTICLE-BEAM DEVICE

A charged-particle-beam device used for measuring the dimensions, etc., of fine circuit patterns in a semiconductor manufacturing process, wherein corrections are made in the defocusing and astigmatism generated during changes in the operating conditions of a Wien filter acting as a deflector of secondary signals such as secondary electrons, and the display dimensions of obtained images are kept constant. In the charged-particle-beam device, the Wien filter () is arranged between a detector and a lens () arranged on the test-sample side among two stages of lenses for converging a charged-particle beam, and a computing device () is provided for the interlocked control of the Wien filter () and a lens () arranged on the charged-particle-source side among the two stages of lenses. 1. A charged particle beam apparatus comprising:a charged particle source;2-stage lenses for converging a primary charged particle beam emitted from the charged particle source on a sample, wherein a first lens arranged on a side of the charged particle source and a second lens arranged on the side of the sample are included;a deflector that specifies an irradiation position of the primary charged particle beam on the sample;a detector arranged between the 2-stage lenses to detect a secondary charged particle signal generated by the sample being irradiated with the primary charged particle beam from the sample;a first Wien filter arranged between the detector and the second lens to deflect the secondary charged particle signal; anda processor that controls the first Wien filter and the first lens in linkage.2. The charged particle beam apparatus according to claim 1 , wherein the processor calculates an action of the first lens from a deflection amount of the secondary charged particle signal by the first Wien filter.3. The charged particle beam apparatus according to claim 2 , wherein the processor calculates the action of the first lens by accepting a focused position of the first lens ...

Multi-electron-beam imaging apparatus with improved performance

A multi-electron beam imaging apparatus is disclosed herein. An example apparatus at least includes an electron source for producing a precursor electron beam, an aperture plate comprising an array of apertures for producing an array of electron beams from said precursor electron beam, an electron beam column for directing said array of electron beams onto a specimen, where the electron beam column is configured to have a length less than 300 mm, and where the electron beam column comprises a single individual beam crossover plane in which each of said electron beams forms an intermediate image of said electron source, and a single common beam crossover plane in which the electron beams in the array cross each other.

Charged Particle Beam Device

A charged particle beam device includes: a charged particle source that emits a charged particle beam; a boosting electrode disposed between the charged particle source and a sample to form a path of the charged particle beam and to accelerate and decelerate the charged particle beam; a first pole piece that covers the boosting electrode; a second pole piece that covers the first pole piece; a first lens coil disposed outside the first pole piece and inside the second pole piece to form a first lens; a second lens coil disposed outside the second pole piece to form a second lens; and a control electrode formed between a distal end portion of the first pole piece and a distal end portion of the second pole piece to control an electric field formed between the sample and the distal end portion of the second pole piece. 1. A charged particle beam device , comprising:a charged particle source that emits a charged particle beam;a boosting electrode disposed between the charged particle source and a sample to form a path of the charged particle beam and accelerate and decelerate the charged particle beam;a first pole piece that covers the boosting electrode;a second pole piece that covers the first pole piece;a first lens coil disposed outside the first pole piece and inside the second pole piece to form a first lens;a second lens coil disposed outside the second pole piece to form a second lens; anda control electrode formed between a distal end portion of the first pole piece and a distal end portion of the second pole piece to control an electric field formed between the sample and the distal end portion of the second pole piece.2. The charged particle beam device according to claim 1 , whereinthe first lens is a non-immersion type lens and the second lens is an immersion type lens.3. The charged particle beam device according to claim 1 , further comprising:a division unit detachably formed on the charged particle beam device, whereinthe division unit includes a ...

A CORRECTOR STRUCTURE AND A METHOD FOR CORRECTING ABERRATION OF AN ANNULAR FOCUSED CHARGED-PARTICLE BEAM

A corrector structure and a method for correcting aberration of an annular focused charged-particle beam, the corrector structure comprising a plurality of lenses configured for reducing second-order geometric aberration in the charged-particle beam. 1. A corrector structure for correcting aberration of an annular focused charged-particle beam , the corrector structure comprising a plurality of lenses configured for reducing second-order geometric aberration in the charged-particle beam.2. The corrector structure of claim 1 , wherein the lenses comprise core-lenses.3. The corrector structure of claim 1 , wherein the lenses comprise at least one converging lens and at least one diverging lens.4. The corrector structure of claim 1 , wherein for a charged-particle beam converging from a source in a direction towards an objective lens claim 1 , the corrector structure comprises two or more lenses.5. The corrector structure of claim 1 , wherein for a charged-particle beam diverging from a source in a direction towards an objective lens claim 1 , the corrector structure comprises three or more lenses.6. The corrector structure of wherein the lenses comprise two converging lenses and one diverging lens.7. The corrector structure of claim 6 , wherein the diverging lens is disposed between the two converging lenses along a path for the charged-particle beam.8. The corrector structure of claim 1 , wherein the corrector structure is configured for disposal between an objective lens and an annular aperture along a path for the charged-particle beam.9. The corrector structure of claim 1 , wherein the lenses comprise electric field claim 1 , magnetic field and/or combined electric/magnetic field lenses.10. A method for correcting aberration of an annular focused charged-particle beam claim 1 , the method comprising:providing a plurality of lenses; andconfiguring the lenses for reducing second-order geometric aberration in the charged-particle beam.11. The method of claim 10 , ...

Aligning a featureless thin film in a tem

When preparing a Hole-Free Phase Plates (HFPP) a preferably featureless thin film should be placed with high accuracy in the diffraction plane of the TEM, or a plane conjugate to it. Two methods for accurately placing the thin film in said plane are described. One method uses a Ronchigram of the thin film while the TEM is in imaging mode, and the magnification of the Ronchigram is tuned so that the magnification in the middle of the Ronchigram is infinite. The second method uses electrons scattered by the thin film while the TEM is in diffraction mode. When the thin film does not coincide with the diffraction plane, electrons scattered by the thin film seem to originate from another location than the cross-over of the zero beam. This is observed as a halo. The absence of the halo is proof that the thin film coincides with the diffraction plane.

OBJECT PREPARATION DEVICE AND PARTICLE BEAM DEVICE WITH AN OBJECT PREPARATION DEVICE AND METHOD FOR OPERATING THE PARTICLE BEAM DEVICE

An object preparation device for preparing an object in a particle beam apparatus includes at least one cutting device, at least one cutting bevel for cutting the object, where the cutting bevel is arranged at the cutting device, at least one movably embodied object receptacle device having an object receptacle for receiving the object, and at least one drive unit for moving the object receptacle device from a first position of the object receptacle device into a second position of the object receptacle device. The first position of the object receptacle device is an initial position. The second position of the object receptacle device is an analysis and/or processing position of the object receptacle device. An observation axis (OA) extends through the object receptacle when the object receptacle device is arranged at the second position. 2. The object preparation device as claimed in claim 1 , wherein the object receptacle device is embodied to be movable in a linear fashion only.3. The object preparation device as claimed in claim 1 , wherein the object receptacle has a receptacle area for the object and the object preparation device has at least one of the following features:the receptacle axis extends through the object receptacle and is arranged perpendicular to the receptacle area of the object receptacle; andthe observation axis (OA) is arranged perpendicular to the receptacle area of the object receptacle.4. The object preparation device as claimed in claim 1 , wherein the object preparation device is mountable on a movably embodied specimen stage of the particle beam apparatus.5. The object preparation device as claimed in claim 1 , wherein the object preparation device has the following features:the object receptacle device is embodied to be movable along a first axis;at least one base unit, on which the object receptacle device is arranged, wherein the base unit is embodied to be rotatable about a second axis and wherein the second axis is aligned ...

Beam Deflection Device, Aberration Corrector, Monochromator, and Charged Particle Beam Device

The present disclosure pertains to a beam deflection device capable of properly deflecting a beam. The present disclosure provides a beam deflection device for deflecting a beam inside a charged particle beam device, said beam deflection device being provided with: one or more electrostatic deflectors (207, 208) each having a pair of electrodes disposed so as to face each other across a beam path in a first direction orthogonal to the beam path; and one or more magnetic deflectors (209) each having a pair of magnetic poles disposed so as to face each other across the beam path in a second direction orthogonal to the beam path and to the first direction. When viewed from an incident direction of the beam, the one or more electrostatic deflectors and the one or more magnetic deflectors are stacked along the beam path such that the pair of electrodes at least partially overlap with the pair of magnetic poles and with a gap between the pair of magnetic poles.

Particle beam profiles for analytic equipment configuration

Beam intercept profiles are measured as a particle beam transversely scans across a probe. A current of beam particles, a detector intensity, or image pixel intensities can variously be measured to obtain the profiles. Multiple profiles are used to determine geometric parameters which in turn can be used to configure equipment. In one application, transverse beam intercept profiles are measured for different waist heights of the particle beam. Steepness of the several profiles can be used to determine a height of the probe as the height at which the profile is steepest. The known probe height enables placing the probe in contact with a substrate at another known height. In another application, transverse beam intercept profiles of orthogonal probe edges are used to position a beam waist, reduce spot size, or reduce astigmatism. Techniques are applicable to SEM, FIB, and nanoprobe systems. Methods and apparatus are disclosed, with variations.

MACHINE LEARNING ON WAFER DEFECT REVIEW

This disclosure is directed to solutions of detecting and classifying wafer defects using machine learning techniques. The solutions take only one coarse resolution digital microscope image of a target wafer, and use machine learning techniques to process the coarse SEM image to review and classify a defect on the target wafer. Because only one coarse SEM image of the wafer is needed, the defect review and classification throughput and efficiency are improved. Further, the techniques are not distractive and may be integrated with other defect detecting and classification techniques. 1. A method , comprising:obtaining a first microscope image of a first part of a wafer, the first microscope image having a first resolution;obtaining a reference image of the first part of the wafer based on wafer design information of the wafer; andcomparing the first microscope image with the reference image to determine a mismatch between the first microscope image and the reference image.2. The method of claim 1 , wherein the reference image is obtained through simulation.3. The method of claim 2 , wherein the simulation simulates a side effect of a fabrication process on a shape of a feature formed based on the wafer design.4. The method of claim 1 , wherein the first microscope image includes a defect portion and a non-defect portion.5. The method of claim 4 , wherein the reference image is obtained based on the non-defect portion of the first microscope image.6. A method claim 4 , comprising:receiving a first image of a first portion of a wafer, the first image having a first image resolution;obtaining a second image of a second portion of the wafer based on the first image, the second portion being contained within the first portion, the second imaging having a second image resolution that is one of similar to or coarser than the first resolution; andlearning a third image of the second portion based on the second image, the third image having third image resolution that is ...

Spherical aberration corrector for electromagnetic lens for charged particle beam

An electromagnetic lens for charged particle beam exhibits positive spherical aberration. A complicated combination of electromagnetic lenses had been necessary for correcting this spherical aberration. One of a circular aperture or a ring-shaped aperture is provided on an incident plate arranged on an incident side of charged particle beam, another of the circular aperture or the ring-shaped aperture is provided on a plate arranged on an emission side thereof, and a voltage is applied between the incident plate and the emission plate. By so doing, an electric field generated in the ring-shaped aperture emanates, which resolves the positive spherical aberration. The spherical aberration can be corrected by an extremely simple and easily implemented structure.

Charged Particle Beam Device and Spherical Aberration Correction Method

In general, in a multipole lens of an aberration corrector of a charged particle beam device, there is only one condition that can be set where both a spherical aberration correction condition and magnetic saturation are satisfied. Therefore, a plurality of acceleration voltages cannot be handled. Consequently, the present invention provides a spherical aberration corrector that satisfies the magnetic saturation state for a plurality of aberration correction conditions by selectively magnetizing a plurality of pole groups of the multipole lens according to the changes in the objective lens magnetization current. 1. A charged particle beam device comprising:a charged particle beam source;a charged particle optical system that irradiates a specimen with charged particle beams which are formed of charged particles released from the charged particle source;an objective lens that focuses the charged particle beams;a spherical aberration corrector that satisfies a magnetically saturated state in multiple aberration correction conditions by selectively magnetizing multiple sets of pole groups of a multipole lens according to a change in magnetization current of the objective lens; anda control unit that controls the charged particle optical system and the spherical aberration corrector.2. The charged particle beam device according to claim 1 ,wherein the multiple aberration correction conditions respectively correspond to multiple acceleration voltages.3. The charged particle beam device according to claim 1 ,wherein the multiple aberration correction conditions respectively correspond to multiple pole piece shapes of the objective lens.4. The charged particle beam device according to claim 1 ,wherein the multipole lens is a 12-pole lens including 12 poles, andwherein a first aberration correction condition is satisfied by magnetizing a first pole group including six poles of the 12 poles, a second aberration correction condition is satisfied by magnetizing a second pole ...

Electron Microscope and Specimen Tilt Angle Adjustment Method

An electron microscope includes: an irradiation lens system that irradiates a specimen with an electron beam; an irradiation system deflector that deflects an electron beam incident on the specimen; a specimen tilting mechanism that tilts the specimen; an imaging lens system that forms an electron diffraction pattern or an electron microscope image by using an electron having passed through the specimen; an imaging device that acquires the electron diffraction pattern or the electron microscope image formed by the imaging lens system; and a controller that controls the irradiation system deflector and the specimen tilting mechanism. The controller performs: a process of acquiring a plurality of electron diffraction patters formed by using electron beams having different incidence angles to the specimen, the different incidence angles having been obtained by deflecting the electron beams incident on the specimen by using the irradiation system deflector; a process of calculating a tilt angle of the specimen based on the plurality of electron diffraction patterns; and a process of controlling the specimen tilting mechanism so that the specimen has the calculated tilt angle. 1. An electron microscope comprising:an irradiation lens system that irradiates a specimen with an electron beam;an irradiation system deflector that deflects an electron beam incident on the specimen;a specimen tilting mechanism that tilts the specimen;an imaging lens system that forms an electron diffraction pattern or an electron microscope image by using an electron having passed through the specimen;an imaging device that acquires the electron diffraction pattern or the electron microscope image formed by the imaging lens system; anda controller that controls the irradiation system deflector and the specimen tilting mechanism,the controller configured to:acquire a plurality of electron diffraction patterns formed by using electron beams having different incidence angles to the specimen, the ...

Apparatus of Plural Charged-Particle Beams

One modified source-conversion unit and one method to reduce the Coulomb Effect in a multi-beam apparatus are proposed. In the modified source-conversion unit, the aberration-compensation function is carried out after the image-forming function has changed each beamlet to be on-axis locally, and therefore avoids undesired aberrations due to the beamlet tilting/shifting. A Coulomb-effect-reduction means with plural Coulomb-effect-reduction openings is placed close to the single electron source of the apparatus and therefore the electrons not in use can be cut off as early as possible. 1deflecting a charged-particle beam of the single charged-particle source into a plurality of parallel beamlets which forms a plurality of virtual images respectively, wherein each of the plurality of virtual images is one of the plurality of sub-sources;correcting aberrations of each of the plurality of virtual images; andcutting a current of each of the plurality of beamlets.. A method for converting a single charged particle source into a plurality of virtual sub-sources, comprising steps of: This application claims the benefit of priority of U.S. provisional application No. 62/160,031 entitled to Xuedong Liu et al. filed on May 12, 2015 and entitled “Apparatus of Plural Charged-Particle Beams”, the entire disclosures of which are incorporated herein by reference.This application is related to U.S. application Ser. No. 15/065,342 entitled to Weiming Ren et al. filed on Mar. 9, 2016 and entitled “Apparatus of Plural Charged-Particle Beams”, the entire disclosures of which are incorporated herein by reference.This application is related to U.S. application Ser. No. 15/078,369 entitled to Weiming Ren et al. filed on Mar. 23, 2016 and entitled “Apparatus of Plural Charged-Particle Beams”, the entire disclosures of which are incorporated herein by reference.1. Field of the InventionThe present invention relates to a charged-particle apparatus with a plurality of charged-particle beams. ...

Multipole Unit and Charged Particle Beam Device

An object is to provide a multipole unit capable of achieving both high positional accuracy and ease of assembling and preventing a decrease in the transmission rate of the magnetic flux. A multipole unit includes a pole that is made of a soft magnetic metal material, a shaft that is made of a soft magnetic metal material and is magnetically connected to the pole, and a coil that is wound around the shaft . The pole is provided with a first fitting portion JP that forms a first recessed portion or a first protruding portion. The shaft is provided with a second fitting portion JP that forms a second protruding portion or a second recessed portion. The first fitting portion JP and the second fitting portion JP are fitted with each other such that the pole and the shaft are physically separated from each other. 1. A multipole unit , comprising:a pole made of a soft magnetic metal material;a shaft made of a soft magnetic metal material and magnetically connected to the pole; anda coil wound around the shaft, whereinthe pole is provided with a first fitting portion that forms a first recessed portion or a first protruding portion,the shaft is provided with a second fitting portion that forms a second protruding portion or a second recessed portion,the second fitting portion forms the second protruding portion when the first fitting portion is the first recessed portion, and forms the second recessed portion when the first fitting portion is the first protruding portion, andthe first fitting portion and the second fitting portion are fitted with each other such that the pole and the shaft are physically separated from each other.2. The multipole unit according to claim 1 , whereinthe shaft is provided with a voltage supply terminal configured to supply a predetermined voltage to the shaft, andan elastic member having conductivity is provided in a gap between the first fitting portion and the second fitting portion so that the pole and the shaft are electrically connected. ...

Charged particle microscope, and method for adjusting a charged particle microscope

The invention relates to a charged particle microscope for examining a specimen, and a method of calibrating a charged particle microscope. The charged particle microscope comprises an optics column, including a charged particle source, a final probe forming lens and a scanner, for focusing and scanning a beam of charged particles emitted from said charged particle source along an optical axis onto a specimen. Furthermore, a specimen stage is positioned downstream of said final probe forming lens and arranged for holding said specimen. Additionally, a detector device is provided, comprising at least two detector segment elements that are annularly spaced about said optical axis. A control unit is provided that is arranged for obtaining, for the at least two detector segment elements, corresponding detector segment images of said specimen by scanning the beam over said specimen. Based on a relative movement between the detector segment images, an aberration parameter of the charged particle microscope can be determined. The aberration parameter may be defocus, astigmatism and/or coma.

Sixth-order and above corrected stem multipole correctors

Correctors for correcting axial aberrations of a particle-optical lens in a charged particle microscope system, according to the present disclosure include a first primary multipole that generates a first primary multipole field when a first excitation is applied to the first primary multipole, and a second primary multipole that generates a second primary multipole field when a second excitation is applied to the second primary multipole. The first primary multipole is not imaged onto the second primary multipole such that a combination fourth-order aberration is created. The correctors further include a secondary multipole for correcting the fourth-order aberration and the sixth-order aberration. Such correctors may further include a tertiary multipole for correcting an eighth-order aberration.

CHARGED PARTICLE BEAM DEVICE

This charged particle beam device is characterized by controlling a deflector in a manner so as to correct the amount of scanning deflection of a charged particle beam between: a first detection condition for detecting a secondary charged particle () signal; and a second detection condition for detecting a reflected charged particle () signal. As a result, it is possible to correct length measurement error and scaling fluctuation arising when altering the type of charged particle to detect. Thus, in the observation, measurement, and the like of a low-step sample or a charged sample, even when forming an image that is on the basis of the reflected charged particle signal, it is possible to obtain an accurate image regardless of length measurement error and scaling fluctuation. 1. A charged particle beam device comprising:a charged particle source for emitting a charged particle beam;an accelerating electrode for accelerating the charged particle beam;a deflector for scanning and deflecting the charged particle beam;an objective lens for converging the charged particle beam;a sample stage for mounting a sample thereon;a detector for detecting charged particles emitted from the sample;an electrode located at a position closer to the sample than the detector for receiving a positive or a negative voltage; anda control computer for supplying a signal to the deflector,wherein the control computer controls the voltage applied to the electrode and supplies to signal to the deflector so as to correct a scanning deflection of the charged particle beam between a first detection condition of detection of a secondary charged particle and a second detection condition of detection of a reflected charged particle.2. The charged particle beam device according to claim 1 , wherein the control computer controls the voltage applied to the electrode so as to be changed over from the first detection condition of application of the positive voltage to the electrode to the second detection ...

METHOD OF INFLUENCING A CHARGED PARTICLE BEAM, MULTIPOLE DEVICE, AND CHARGED PARTICLE BEAM APPARATUS

A method of influencing a charged particle beam () propagating along an optical axis (A) is described. The method includes: guiding the charged particle beam () through at least one opening () of a multipole device () that comprises a first multipole () with four or more first electrodes () and a second multipole () with four or more second electrodes () arranged in the same sectional plane, the first electrodes and the second electrodes being arranged alternately around the at least one opening (); and at least one of exciting the first multipole to provide a first field distribution for influencing the charged particle beam in a first manner, and exciting the second multipole to provide a second field distribution for influencing the charged particle beam in a second manner. Further, a multipole device () with a first multipole () and a second multipole () provided on the same substrate as well as a charged particle beam apparatus () with a multipole device () are provided. 1. A method of influencing a charged particle beam propagating along an optical axis , comprising:guiding the charged particle beam through at least one opening of a multipole device that comprises a first multipole with four or more first electrodes and a second multipole with four or more second electrodes arranged in the same sectional plane, the four or more first electrodes and the four or more second electrodes being arranged alternately around the at least one opening; and at least one of:exciting the first multipole to provide a first field distribution for influencing the charged particle beam in a first manner, andexciting the second multipole to provide a second field distribution for influencing the charged particle beam in a second manner.2. The method according to claim 1 , wherein the first multipole is a first octupole including eight first electrodes claim 1 , and the second multipole is a second octupole including eight second electrodes.3. The method according to claim 1 , ...

CONDUCTION INSPECTION METHOD FOR MULTIPOLE ABERRATION CORRECTOR, AND CONDUCTION INSPECTION APPARATUS FOR MULTIPOLE ABERRATION CORRECTOR

A conduction inspection method for a multipole aberration corrector according to one aspect of the present invention includes applying, in a state where a predetermined potential has been applied to each shield electrode, an inspection charged particle beam to pass through a first opening, a second opening, and a third opening, using a multipole aberration corrector which includes an upper-stage substrate where the first opening is formed and a shield electrode is arranged around the first opening, a middle-stage substrate where the second opening is formed, a plurality of control electrodes are disposed to be opposite each other across the second opening, and a plurality of wirings are arranged to be individually connected to one of the plurality of control electrodes which are different from each other, and a lower-stage substrate where the third opening is formed and a shield electrode is arranged around the third opening, and which corrects aberration of a correction charged particle beam passing through the first opening, the second opening, and the third opening by individually variably applying a potential to each of the plurality of control electrodes; measuring, via a wiring individually connected to each control electrode of the plurality of control electrodes in the plurality of wirings, an inflow electron dose of electrons, into each control electrode of the plurality of control electrodes, which are secondarily emitted because the inspection charged particle beam has passed through the first opening, the second opening, and the third opening and has irradiated an object disposed at the downstream side of the lower-stage substrate; and determining individually, for each control electrode, whether there is conduction between a control electrode concerned and a wiring connected to the control electrode concerned, based on a result of measuring the inflow electron dose into each control electrode. 1. A conduction inspection method for a multipole aberration ...

CHARGED PARTICLE BEAM DEVICE

A charged particle beam device that detects a secondary charged particle beam generated by irradiation of a sample by a primary charged particle beam, includes: an image shift deflector that shifts an irradiation region for irradiation of the sample by the primary charged particle beam; a magnetic sector that separates the primary charged particle beam passing therein from the secondary charged particle beam from the sample using a magnetic field generated therein; a correction mechanism that is placed off of a trajectory of the primary charged particle beam but on a trajectory of the secondary charged particle beam inside the magnetic sector, the correction mechanism deflecting the secondary charged particle beam passing through; and a controller that controls the correction mechanism according to a defined relationship between a shift amount by the image shift deflector and a correction amount by the correction mechanism. 1. A charged particle beam device that detects a secondary charged particle beam generated by irradiation of a sample by a primary charged particle beam , the charged particle beam device comprising:an image shift deflector that shifts an irradiation region for irradiation of the sample by the primary charged particle beam;a magnetic sector that separates the primary charged particle beam passing therein from the secondary charged particle beam from the sample using a magnetic field generated therein;a correction mechanism that is placed off of the trajectory of the primary charged particle beam but on the trajectory of the secondary charged particle beam inside the magnetic sector, the correction mechanism deflecting the secondary charged particle beam passing through; anda controller that controls the correction mechanism according to a defined relationship between a shift amount by the image shift deflector and a correction amount by the correction mechanism.2. The charged particle beam device according to claim 1 ,wherein the correction ...

Asymmetric Electrostatic Quadrupole Deflector for Improved Field Uniformity

An electron beam device for inspecting a target substrate or specimen thereon includes a beam separator with an asymmetric quadrupole electrostatic deflector for improving field uniformity for a single direction of deflection. The asymmetric quadrupole electrostatic deflector includes two orthogonal electrode plates spanning roughly 60 degrees and two electrode plates spanning roughly 120 degrees, the two latter plates defining a unidirectional deflection field. The device generates a primary electron beam and focuses the primary electron beam along an optical axis into the target substrate. Secondary electrons detected at the target substrate are focused into a secondary electron beam. The beam separator with asymmetric quadrupole electrostatic deflector deflects the secondary electron beam away from the axis of the primary electron beam in the direction of deflection and into a detector array. 1. An asymmetric quadrupole electrostatic deflector , comprising:a first pair of plates including a first plate and a second plate, the first plate and the second plate each spanning a first radial angle; anda second pair of plates including a third plate and a fourth plate, the third plate and the fourth plate each adjacent to the first plate and the second plate and each spanning a second radial angle greater than the first radial angle.2. The deflector of claim 1 , wherein the second radial angle is twice the first radial angle.3. The deflector of claim 1 , further comprising:a plurality of gaps including at least a first gap separating the first plate from the third plate, a second gap separating the third plate from the second plate, a third gap separating the second plate from the fourth plate, and a fourth gap separating the fourth plate from the first plate, each gap of the plurality of gaps spanning a third radial angle.4. The deflector of claim 3 , wherein the first radial angle is between 58 and 60 degrees claim 3 , the second radial angle is between 116 and 120 ...

ABERRATION CORRECTION IN CHARGED PARTICLE SYSTEM

A lens element of a charged particle system comprises an electrode having a central opening. The lens element is configured for functionally cooperating with an aperture array that is located directly adjacent said electrode, wherein the aperture array is configured for blocking part of a charged particle beam passing through the central opening of said electrode. The electrode is configured to operate at a first electric potential and the aperture array is configured to operate at a second electric potential different from the first electric potential. The electrode and the aperture array together form an aberration correcting lens. 127-. (canceled)28. A lens element of a charged particle system , comprising:a body having a cavity formed therein for a path of a charged particle beam; anda cooling arrangement for cooling the lens elements, comprising one or more channels configured to accommodate a fluid flowing around the path of the charged particle beam,wherein the one or more channels are formed within a solid structure of the body.29. The lens element of claim 28 , wherein the cooling arrangement comprises one or more lateral channels extending in a substantially rotational direction around the path of the charged particle beam in circumference of the cavity.30. The lens element of claim 29 , wherein the cooling arrangement further comprises a longitudinal channel connected to at least two of the one or more lateral channels.31. The lens element of claim 30 , wherein the longitudinal channel has at least one section that extends in a radial direction to the path of the charged particle beam.32. The lens element of claim 30 , wherein the longitudinal channel has a section arranged for fluid flow in a substantially opposite direction of fluid flow via the lateral channels.33. The lens element of claim 30 , wherein the longitudinal channel has at least one section that extends substantially parallel to the path of the charged particle beam.34. The lens element of ...

MULTI CHARGED PARTICLE BEAM WRITING APPARATUS AND MULTI CHARGED PARTICLE BEAM WRITING METHOD

According to one embodiment, a multi charged particle beam writing apparatus includes an objective lens adjusting a focus position of multiple beams, a coil correcting astigmatism of the multiple beams, an inspection aperture disposed in a stage and configured to allow one beam of the multiple beams to pass therethrough, a deflector deflecting the multiple beams, a current detector detecting a beam current of each beam of the multiple beams scanned over the inspection aperture in the XY direction and passed through the inspection aperture, and a controller generating a beam image on the basis of the detected beam current, calculating a feature quantity of the beam image, and controlling the objective lens or the coil on the basis of the feature quantity. 1. A multi charged particle beam writing apparatus comprising:an aperture plate having a plurality of holes and forming multiple beams by allowing a charged particle beam to pass through the plurality of holes;a blanking aperture array having a plurality of blankers each configured to turn on and off a corresponding beam of the multiple beams;a stage placing a substrate serving as a writing target thereon, the stage being movable in an XY direction;an objective lens adjusting a focus position of the multiple beams;a coil correcting astigmatism of the multiple beams;an inspection aperture disposed in the stage and configured to allow one beam of the multiple beams to pass therethrough;a deflector deflecting the multiple beams;a current detector detecting a beam current of each beam of the multiple beams scanned over the inspection aperture in the XY direction and passed through the inspection aperture; anda controller generating a beam image on the basis of the detected beam current, calculating a feature quantity of the beam image, and controlling the objective lens or the coil on the basis of the feature quantity.2. The apparatus according to claim 1 , wherein the inspection aperture is scanned at a plurality of ...

CHARGED PARTICLE BEAM DEVICE

This charged particle beam device comprises: an electron beam source (); a charged particle optical system that includes an object lens () and that irradiates a sample () with electrons emitted from the electron beam source () as an electron beam (); an aberration corrector () that corrects aberrations in the charged particle optical system; and a control unit () that controls the components of the charged particle optical system and the aberration corrector (). The charged particle beam device further comprises an automatic aberration-correcting device () that autonomously acquires, through leaning, optimum adjustment procedures in order to reduce the time required for correcting parasitic aberrations that arise in the aberration corrector (). 1. A charged particle beam device comprising:a charged particle beam source;a charged particle optical system irradiating a sample with a charged particle emitted from the charged particle beam source as a charged particle beam;an aberration corrector correcting an aberration of the charged particle optical system; anda control unit controlling various components of the charged particle optical system and the aberration corrector, wherein the charged particle beam device further comprises:an automatic aberration-correcting device autonomously acquiring optimum adjustment procedures by learning.2. A charged particle beam device comprising:a charged particle beam source;a charged particle optical system irradiating a sample with a charged particle emitted from the charged particle beam source as a charged particle beam;an aberration corrector correcting an aberration of the charged particle optical system;a control unit controlling various components of the charged particle optical system and the aberration corrector;an aberration measurement unit measuring a plurality of aberration coefficients of the charged particle optical system;a storage device saving a value function table holding a value indicating which of a plurality ...

Apparatus of Plural Charged-Particle Beams

A secondary projection imaging system in a multi-beam apparatus is proposed, which makes the secondary electron detection with high collection efficiency and low cross-talk. The system employs one zoom lens, one projection lens and one anti-scanning deflection unit. The zoom lens and the projection lens respectively perform the zoom function and the anti-rotating function to remain the total imaging magnification and the total image rotation with respect to the landing energies and/or the currents of the plural primary beamlets. The anti-scanning deflection unit performs the anti-scanning function to eliminate the dynamic image displacement due to the deflection scanning of the plural primary beamlets. 1. A multi-beam apparatus for observing a surface of a sample , comprising:an electron source;a condenser lens below said electron source;a source-conversion unit below said condenser lens;an objective lens below said source-conversion unit;a deflection scanning unit below said source-conversion unit;a sample stage below said objective lens;a beam separator below said source-conversion unit; and wherein said electron source, said condenser lens, said source-conversion unit, said objective lens, said deflection scanning unit and said beam separator are aligned with a primary optical axis of said apparatus, said sample stage sustains said sample so that said surface faces to said objective lens, said detection unit is aligned with a secondary optical axis of said apparatus, and said secondary optical axis is not parallel to said primary optical axis,', 'wherein said plurality of detection elements is placed on a detection plane, said secondary projection imaging system comprises a zoom lens, an anti-scanning deflection unit and a projection lens,', 'wherein said electron source generates a primary electron beam along said primary optical axis, said condenser lens focuses said primary electron beam to a certain degree, said source-conversion unit changes said primary ...

Micro-column with double aligner

Disclosed herein is a microcolumn with a double aligner. The microcolumn is configured such that when an axis of an aperture of a limiting aperture is spaced apart from an original path of a particle beam, the path of the particle beam can be effectively compensated for in such a way that the path of the particle beam is aligned with the axis of the aperture of the limiting aperture by the double aligner. The microcolumn includes a source lens. The source lens includes at least two aligner layers which compensate for the path of the particle beam.

Method for inspecting a specimen and charged particle multi-beam device

A method of inspecting a specimen with an array of primary charged particle beamlets in a charged particle beam device is described. The method includes generating a primary charged particle beam with a charged particle beam emitter; illuminating a multi-aperture lens plate with the primary charged particle beam to generate the array of primary charged particle beamlets; correcting a field curvature with at least two electrodes, wherein the at least two electrodes include aperture openings; directing the primary charged particle beamlets with a lens towards an objective lens; guiding the primary charged particle beamlets through a deflector array arranged within the lens; wherein the combined action of the lens and the deflector array directs the primary charged particle beamlets through a coma free point of the objective lens; and focusing the primary charged particle beamlets on separate locations on the specimen with the objective lens.

CHARGED PARTICLE BEAM APPARATUS AND ABERRATION CORRECTOR

High expectations are placed on aberration correctors to increase the resolving power of charged particle devices. Meanwhile, a far more complicated configuration and higher mechanical precision assembly in comparison to prior art aberration correctors are necessary in charged particle beam optical devices that use low-energy electron beams. A complex electromagnetic quadrupole part employed in the aberration corrector preferably has the forward extremities of the poles provided in a vacuum near an electron beam path and excitation coils disposed outside the vacuum, and this necessitates a structure that can achieve both electrical insulation and vacuum sealing for each of these poles. Such structural complexity generally conflicts with improving mechanical assembly precision. The complicated structure in the above problems can be simplified by: separating the electrodes and the magnetic poles in the complex electromagnetic multipole that had been used in prior art aberration correctors; and offsetting the positions of both, or ensuring that the widths of both do not match. Consequently, improvement of mechanical assembly precision can be achieved. 1. A charged particle beam apparatus , which is configured to irradiate a sample with a charged particle beam to detect a charged particle ascribable to the sample , the charged particle beam apparatus comprising an aberration correction unit , a first magnetic multipole and a second magnetic multipole;', 'a third magnetic multipole and a fourth magnetic multipole that are provided between the first magnetic multipole and the second magnetic multipole; and', 'a first electrostatic multipole and a second electrostatic multipole that are provided between the first magnetic multipole and the second magnetic multipole, wherein:, 'the aberration correction unit comprisingthe first magnetic multipole, the second magnetic multipole, the third magnetic multipole, and the fourth magnetic multipole and the first electrostatic ...

ABERRATION CORRECTOR AND ELECTRON MICROSCOPE

In order to provide an aberration corrector with a wide aberration correction range, easy control, highly accurate aberration correction, and a low cost, an aberration corrector, passing an electron beam through a central axis includes a first current line group ( to ) which is arranged parallel to an optical axis at a position separated by R from the central axis, and excites a first multipole field, and a second current line group ( to ) which is arranged parallel to the optical axis at a position separated by R from the central axis, and independently excites a second multipole field having an order and intensity different from those of the first multipole field. 1. An electron microscope comprising:an electron source;an aberration corrector which corrects an aberration of an electron beam emitted from the electron source; andan electron optical system which irradiates a sample with the electron beam, wherein an opening through which the electron beam passes through a central axis,', 'a first current line group which is arranged parallel to an optical axis at a position separated by a first radius from the central axis, and excites a first multipole field, and', 'a second current line group which is arranged parallel to the optical axis at a position separated by a second radius longer than the first radius, and independently excites a second multipole field having an order and intensity different from those of the first multipole field., 'the aberration corrector includes'}2. The electron microscope according to claim 1 , whereinthe number of lines of the first current line group is 12 or more.3. The electron microscope according to claim 1 , whereinthe first multipole field has an order higher than that of the second multipole field.4. The electron microscope according to claim 1 , whereina line width per pole of a current line constituting the second current line group is larger than a line width per pole of a current line constituting the first current line ...

APPARATUS OF PLURAL CHARGED-PARTICLE BEAMS

A secondary projection imaging system in a multi-beam apparatus is proposed, which makes the secondary electron detection with high collection efficiency and low cross-talk. The system employs one zoom lens, one projection lens and one anti-scanning deflection unit. The zoom lens and the projection lens respectively perform the zoom function and the anti-rotating function to remain the total imaging magnification and the total image rotation with respect to the landing energies and/or the currents of the plural primary beamlets. The anti-scanning deflection unit performs the anti-scanning function to eliminate the dynamic image displacement due to the deflection scanning of the plural primary beamlets. 176-. (canceled)77. A multi-beam imaging system comprising:a magnetic lens configured to adjust rotation of a plurality of secondary beams of charged particles of the multi-beam imaging system to enable detection of the plurality of secondary beams of charged particles by a corresponding plurality of detection elements.78. The system of claim 77 , wherein the magnetic lens is configured to generate a second rotation that reduces a first rotation generated by another component of the multi-beam imaging system.79. The system of claim 78 , wherein the other component includes an objective lens configured to focus a plurality of charged particle beamlets onto a sample surface.80. The system of claim 79 , wherein the magnetic lens is configured to minimize rotation variation of the plurality of secondary beams of charged particles when observing a sample in different conditions.81. The system of claim 80 , wherein the magnetic lens is configured to adjust rotation based on a focusing power of the objective lens.82. The system of claim 78 , wherein the other component includes a beam separator configured to separate a plurality of charged particle beamlets directed onto a sample surface from the plurality of secondary beams of charged particles.83. The system of claim 79 , ...

Multiple charged-particle beam apparatus with low crosstalk

Systems and methods of forming images of a sample using a multi-beam apparatus are disclosed. The method may include generating a plurality of secondary electron beams from a plurality of probe spots on the sample upon interaction with a plurality of primary electron beams. The method may further include adjusting an orientation of the plurality of primary electron beams interacting with the sample, directing the plurality of secondary electron beams away from the plurality of primary electron beams, compensating astigmatism aberrations of the plurality of directed secondary electron beams, focusing the plurality of directed secondary electron beams onto a focus plane, detecting the plurality of focused secondary electron beams by a charged-particle detector, and positioning a detection plane of the charged-particle detector at or close to the focus plane.

APPARATUS AND METHODS FOR ABERRATION CORRECTION IN ELECTRON BEAM BASED SYSTEM

One embodiment relates to an apparatus for aberration correction in an electron beam lithography system. An inner electrode surrounds a pattern generating device, and there is at least one outer electrode around the inner electrode. Each of the inner and outer electrodes has a planar surface in a plane of the pattern generating device. Circuitry is configured to apply an inner voltage level to the inner electrode and at least one outer voltage level to the at least one outer electrode. The voltage levels may be set to correct a curvature of field in the electron beam lithography system. Another embodiment relates to an apparatus for aberration correction used in an electron based system, such as an electron beam inspection, or review, or metrology system. Other embodiments, aspects and features are also disclosed. 1. An apparatus for aberration correction in electron-optics of an electron beam system , the apparatus comprising:an inner electrode surrounding an opening or reflector in the electron-optics, the inner electrode having a continuous annular planar surface with circular inner and outer perimeters in a plane of the opening or reflector;at least one outer electrode around the inner electrode, the at least one outer electrode having a planar surface in the plane of the opening or reflector; andcircuitry configured to apply an inner voltage level to the inner electrode and at least one outer voltage level to the at least one outer electrode,wherein the inner voltage level and the at least one outer voltage levels, as applied to said electrodes, each causes an electric field that influences both electrons incident to the opening or reflector and electrons outgoing from the opening or reflector.2. The apparatus of claim 1 , wherein each of the inner voltage level and the at least one outer voltage level are controlled individually.3. The apparatus of claim 2 , wherein the inner voltage level and the at least one outer voltage level are set to correct a curvature ...

Liner Tube and Electron Microscope

There is provided a liner tube capable of reducing the effects of magnetic field variations on an electron beam. The liner tube () is disposed inside the electron optical column () of an electron microscope (). The interior of the tube () forms a path for the electron beam (EB). The liner tube () has a first cylindrical member () that is made of copper, gold, silver, or an alloy consisting principally of one of these metals. 1. A liner tube disposed inside an electron optical column of an electron microscope and having an interior providing an elongate path for an electron beam , said liner tube separating an inner vacuum region and an outer non-vacuum region where electron optical elements that generate magnetic fields to affect the electron beam are disposed , said liner tube comprising:a first cylindrical member made of copper, gold, silver, or an alloy consisting principally of one of these metals.2. The liner tube as set forth in claim 1 , wherein a second cylindrical member is disposed inside said first cylindrical member and made of stainless steel or titanium.3. The liner tube as set forth in claim 1 , wherein said first cylindrical member is made of copper or beryllium copper.4. An electron microscope having an electron optical column in which a liner tube is disposed claim 1 , the liner tube having an interior providing an elongate path for an electron beam claim 1 , said liner tube separating an inner vacuum region and an outer non-vacuum region where electron optical elements that generate magnetic fields to affect the electron beam are disposed claim 1 ,wherein said liner tube has a first cylindrical member made of copper, gold, silver, or an alloy consisting principally of one of these metals.5. The electron microscope as set forth in claim 4 , further comprising an aberration corrector equipped with a multipole element claim 4 ,wherein said multipole element has a plurality of polar elements arranged around said first cylindrical member.6. The ...

Method and System for Focus Adjustment of a Multi-Beam Scanning Electron Microscopy System

A scanning electron microscopy system is disclosed. The system includes a multi-beam scanning electron microscopy (SEM) sub-system. The SEM sub-system includes a multi-beam electron source configured to form a plurality of electron beams, a sample stage configured to secure a sample, an electron-optical assembly to direct the electron beams onto a portion of the sample, and a detector assembly configured to simultaneously acquire multiple images of the surface of the sample. The system includes a controller configured to receive the images from the detector assembly, identify a best focus image of images by analyzing one or more image quality parameters of the images, and direct the multi-lens array to adjust a focus of one or more electron beams based on a focus of an electron beam corresponding with the identified best focus image. 1. A multi-beam scanning electron microscopy apparatus comprising: a multi-beam electron source configured to form a plurality of electron beams;', 'a sample stage configured to secure a sample;', 'an electron-optical assembly including a set of electron-optical elements configured to direct at least a portion of the plurality of electron beams onto a portion of the sample; and', 'a detector assembly configured to simultaneously acquire a plurality of images of the surface of the sample, each image associated with an electron beam of the plurality of electron beams;, 'a multi-beam scanning electron microscopy sub-system comprising receive the plurality of images from the detector assembly;', 'identify at least one of a best focus image or a best astigmatism image of the plurality of images by analyzing one or more image quality parameters of at least some of the images of the plurality of the images; and', 'direct the multi-beam source to adjust at least one of focus or astigmatism of one or more electron beams based on at least one of focus or astigmatism of an electron beam corresponding with at least one of the identified best focus ...

APPARATUS OF PLURAL CHARGED-PARTICLE BEAMS

A secondary projection imaging system in a multi-beam apparatus is proposed, which makes the secondary electron detection with high collection efficiency and low cross-talk. The system employs one zoom lens, one projection lens and one anti-scanning deflection unit. The zoom lens and the projection lens respectively perform the zoom function and the anti-rotating function to remain the total imaging magnification and the total image rotation with respect to the landing energies and/or the currents of the plural primary beamlets. The anti-scanning deflection unit performs the anti-scanning function to eliminate the dynamic image displacement due to the deflection scanning of the plural primary beamlets. 176-. (canceled)77. An imaging system , comprising:a zoom lens and a projection lens configured to focus a plurality of beams of charged particles emanated from a sample surface to a plurality of detection elements of a detection device respectively,wherein the zoom lens and the projection lens are configured to keep a corresponding relationship of the plurality of beams of charged particles and the plurality of detection elements respectively.78. The imaging system according to claim 77 , wherein the zoom lens and the projection lens are configured to set an imaging magnification from the sample surface to a detection plane at the detection device.79. The imaging system according to claim 77 , whereinthe corresponding relationship includes imaging each probe spot on the sample surface onto one detection element among the plurality of detection elements, andthe zoom lens and the projection lens are configured to ensure the corresponding relationship.80. The imaging system according to claim 77 , further comprising:an objective lens configured to focus a plurality of charged particle beamlets onto the sample surface.81. The imaging system according to claim 80 , wherein the zoom lens and the projection lens are configured to eliminate imaging magnification variation ...

PARTICLE BEAM SYSTEM FOR ADJUSTING THE CURRENT OF INDIVIDUAL PARTICLE BEAMS

A particle beam system includes: a particle source to generate a beam of charged particles; a first multi-lens array including a first multiplicity of individually adjustable and focusing particle lenses so that at least some of the particles pass through openings in the multi-lens array in the form of a plurality of individual particle beams; a second multi-aperture plate including a multiplicity of second openings downstream of the first multi-lens array so that some of the particles which pass the first multi-lens array impinge on the second multi-aperture plate and some of the particles which pass the first multi-lens array pass through the openings in the second multi-aperture plate; and a controller configured to supply an individually adjustable voltage to the particle lenses of the first multi-lens array and thus individually adjust the focusing of the associated particle lens for each individual particle beam. 1. A multi-beam particle microscope , comprising:a particle source configured to generate a beam of charged particles;a first multi-lens array comprising a first multiplicity of individually adjustable and focusing particle lenses in a beam path of the charged particles so that at least some of the charged particles pass through openings in the first multi-lens array in the form of a plurality of individual charged particle beams;a first multi-aperture plate comprising a multiplicity of second openings in the beam path of the charged particles downstream of the first multi-lens array so that: i) some of the charged particles which pass the first multi-lens array impinge on the first multi-aperture plate and are absorbed by the first multi-aperture plate; and ii) some of the charged particles which pass the first multi-lens array also pass through the openings in the first multi-aperture plate; anda controller configured to supply an individually adjustable voltage to the particle lenses of the first multi-lens array to adjust the focusing of an ...

MULTI-BEAM PARTICLE BEAM SYSTEM AND METHOD FOR OPERATING SAME

A method of operating a multi-beam particle beam system includes: generating a multiplicity of particle beams such that they each pass through multipole elements that are either intact or defective; focusing the particle beams in a predetermined plane; determining excitations for the deflection elements of the multipole elements; exciting the deflection elements of the multipole elements that are intact with the determined excitations; modifying the determined excitations for the deflection elements of the multipole elements that are defective; and exciting the deflection elements of the defective multipole elements with the modified excitations. Modifying the determined excitations includes adding corrective excitations to the determined excitations. The corrective excitations are the same for all deflection elements of the defective multipole element. 1. A method , comprising:generating a plurality of particle beams such that each particle beam passes through a multipole element, wherein each multipole element comprises a plurality of deflection elements arranged in a circumferential direction around a center of the multipole element, and each multipole element is either intact or defective;focusing the particle beams in a predetermined plane;determining excitations for the deflection elements of the multipole elements to influence the particle beams passing through the multipole elements, wherein the excitations for the deflection elements of each multipole element are determined such that focusing of each particle beam in the predetermined plane satisfies a predetermined criterion;exciting the deflection elements of the multipole elements that are intact with the determined excitations;modifying the determined excitations for the deflection elements of at least one multipole element of the multipole elements that are defective; andexciting the deflection elements of the defective multipole element with the modified excitations,wherein modifying the determined ...

Aberration reduction in multipass electron microscopy

Improved aberration correction in multipass electron microscopy is provided by having Fourier images of the sample (instead of real images) at the reflection planes of the resonator. The resulting −1 magnification of the sample reimaging can be compensated by appropriate sample placement or by adding compensating elements to the resonator. This enables simultaneous correction of lowest order chromatic and spherical aberration from the electron objective lenses. If real images of the sample are at the reflection planes of the resonator instead, only the lowest order chromatic aberration can be corrected. 1. A multipass electron microscope comprising:an electron source;an electron resonator including two electron mirrors and configured to include a sample at a predetermined sample location, wherein the electron resonator is configured to provide multipass electron reimaging of the sample location such that diffraction planes of the sample location coincide with reflection planes of the electron mirrors;electron illumination optics configured to receive an electron beam from the electron source and to provide electron illumination to the electron resonator;electron projection optics configured to receive a multipass electron output from the electron resonator;an electron detector configured to receive the multipass electron output from the electron resonator and configured to provide an output image.2. The electron microscope of claim 1 , wherein an available sample area at the sample location is bisected by a midline into a first half-area and a second half-area claim 1 , and wherein a 180 degree image rotation provided by each electron mirror is compensated for by disposing the sample entirely within the first half-area.3. The electron microscope of claim 1 , wherein a 180 degree image rotation provided by each electron mirror is compensated for by disposing at least one compensating element between each electron mirror and the sample location.4. The electron ...

ABERRATION CORRECTION METHOD, ABERRATION CORRECTION SYSTEM, AND CHARGED PARTICLE BEAM APPARATUS

In order to provide an aberration correction system that realizes a charged particle beam of which the anisotropy is reduced or eliminated on a sample surface even in the case where there is magnetic interference between pole stages of an aberration corrector, an correction system includes a line cross position control device () which controls a line cross position in the aberration corrector of the charged particle beam so that a designed value and an actually measured value of the line cross position are equal to each other, an image shift amount extraction device (), and a feedback determination device () which determines whether or not changing an excitation amount of the aberration corrector is necessary whether or not changing an excitation amount is necessary from an extracted image shift amount. 1. A charged particle beam apparatus comprising:a charged particle source;a deflector which deflects a charged particle beam configured with charged particles emitted from the charged particle source;an objective lens which concentrates the charged particle beam and irradiates a sample;a detector which detects secondary electrons emitted from the sample by irradiation of the charged particle beam;an image calculation unit which generates an image based on the secondary electrons detected by the detector;an aberration corrector which is arranged at a subsequent stage of the deflector and corrects aberration of the charged particle beam;a correction system which controls the aberration corrector; anda control unit which controls the components,wherein the aberration corrector includes two or more stages of multipoles which control the aberration of the charged particle beam,wherein the multipoles of the first stage and the second stage constitute a first deflection unit and a second deflection unit which cause a deflection action in at least two directions of x and y directions, andwherein the correction system includes:a line cross position control device which ...

COMPACT DEFLECTING MAGNET

A particle beam device including a magnet, the device including: a particle beam source configured to emit electron and ion beams; a plurality of yokes arranged in a substantially rectangular shape; a coil set including a plurality of coils, wherein windings of the plurality of coils are uniformly distributed across and wound around the plurality of yokes, wherein the coil set is configured to produce both dipole and quadrupole fields, wherein the magnet is configured to deflect and focus electron and ion beams. 121-. (canceled)22. (canceled)23. A magnet comprising:a yoke having a set of four faces and a set of four octagonal corners;a first set of four coils, each wound, respectively, on the set of four faces; anda second set of four coils, each wound, respectively, on the set of four octagonal corners.24. The magnet of claim 23 , the second set of four coils electrically connected to each other to provide a quadrupole magnetic field in response to a current in the second set of four coils.25. The magnet of claim 24 , the yoke having an exit side with an arcuate contour.26. The magnet of claim 25 , wherein a pair of faces in the set of four faces have the arcuate contour at the exit side.27. The magnet of claim 26 , the pair of faces parallel to each other.28. The magnet of claim 27 , wherein the yoke is horn-shaped.29. The magnet of claim 23 , the yoke having an exit side with an arcuate contour.30. The magnet of claim 23 , the yoke comprising two parts attached together.31. The magnet of claim 30 , a first part of the two attached parts including a first part of a face claim 30 , a second part of the two attached parts including a second part of the face claim 30 , wherein a coil in the first set of coils wound on the face comprises:a first part coil wound on the first part of the face; anda second part coil wound on the second part of the face, the second part coil electrically connected to the first part coil to form the coil.32. The magnet of claim 23 , the ...

SCAN AND CORRECTOR MAGNET DESIGNS FOR HIGH THROUGHPUT SCANNED BEAM ION IMPLANTER

An ion implantation system and method provide a non-uniform flux of a ribbon ion beam. A spot ion beam is formed and provided to a scanner, and a scan waveform having a time-varying potential is applied to the scanner. The ion beam is scanned by the scanner across a scan path, generally defining a scanned ion beam comprised of a plurality of beamlets. The scanned beam is then passed through a corrector apparatus. The corrector apparatus is configured to direct the scanned ion beam toward a workpiece at a generally constant angle of incidence across the workpiece. The corrector apparatus further comprises a plurality of magnetic poles configured to provide a non-uniform flux profile of the scanned ion beam at the workpiece. 1. An ion implantation system , comprising:an ion source configured to form an ion beam;a mass analyzer configured to mass analyze the ion beam;a power source configured to provide a scan waveform;a scanner configured to selectively scan the ion beam along a scan path based on the scan waveform, therein defining a scanned ion beam; anda corrector apparatus configured to transport the scanned ion beam toward a workpiece at a generally constant angle of incidence across the workpiece, wherein one or more of the scanner and corrector apparatus are configured to provide the scanned ion beam having a flux that increases from a first beam flux associated with a central region of the workpiece to a second beam flux associated with an edge of the workpiece.2. The ion implantation system of claim 1 , wherein the corrector apparatus comprises a plurality of magnetic poles configured to define a non-uniform flux profile of the scanned ion beam at the workpiece.3. The ion implantation system of claim 2 , wherein the non-uniform flux profile is generally defined by the first beam flux associated with the edge of the workpiece and the second beam flux associated with the central region of the workpiece.4. The ion implantation system of claim 3 , wherein the ...

Electron Beam Apparatus

In an electron beam apparatus performing angular scanning that changes an incident angle of an electron beam incident at a predetermined incident position on a sample, when a correction coil is provided in a gap portion of a yoke (magnetic path) of an objective lens, spherical aberration can be corrected by following a deflection signal even if a deflection frequency increases. Therefore, a main control unit that controls an electron optical system sets predetermined phase change amounts a, b with respect to control of a scanning coil in control of the correction coil, and the predetermined phase change amounts a, b are made different depending on a plurality of scanning modes having different scanning speeds. 1. An electron beam apparatus configured to perform angular scanning that changes an incident angle of an electron beam incident at a predetermined incident position on a sample , and having a plurality of scanning modes having different scanning speeds of the angular scanning , the electron beam apparatus comprising:a scanning coil configured to deflect the electron beam;an objective lens configured to swing back the electron beam deflected to the outside of an optical axis by the scanning coil;a correction coil disposed in a gap portion of a magnetic pole of the objective lens; anda main control unit configured to control an electron optical system including the scanning coil, the objective lens, and the correction coil, whereinthe main control unit is configured to set predetermined phase change amounts with respect to control of the scanning coil in control of the correction coil, and the predetermined phase change amounts differ depending on the plurality of scanning modes.2. The electron beam apparatus according to claim 1 , whereinthe correction coil is configured to correct spherical aberration generated in the objective lens.3. The electron beam apparatus according to claim 1 , whereinthe plurality of scanning modes include a reference scanning mode, ...

Charged Particle Beam Apparatus

An object of the present disclosure is to provide a charged particle beam apparatus that can quickly find a correction condition for a new aberration that is generated in association with beam adjustment. In order to achieve the above object, the present disclosure proposes a charged particle beam apparatus configured to include an objective lens () configured to focus a beam emitted from a charged particle source and irradiate a specimen, a visual field movement deflector ( and ) configured to deflect an arrival position of the beam with respect to the specimen, and an aberration correction unit ( and ) disposed between the visual field movement deflector and the charged particle source, in which the aberration correction unit is configured to suppress a change in the arrival position of the beam irradiated under different beam irradiation conditions. 1. A method of positioning a visual field at a desired position on a specimen by using a visual field movement deflector that changes an arrival position of a beam emitted from a charged particle source , the method comprising:deflecting the beam to a desired arrival position by using the visual field movement deflector;adjusting a deflection condition of the visual field movement deflector so as to cancel an inclination of an incident beam when the beam is deflected to the desired arrival position; andadjusting an aberration correction unit disposed between the charged particle source and the visual field movement deflector so as to cancel off-axis chromatic aberration generated according to an amount of visual field movement by the visual field movement deflector and off-axis chromatic aberration generated by setting the deflection condition of the visual field movement deflector so as to cancel the inclination of the incident beam.2. A charged particle beam apparatus comprising:an objective lens configured to focus a beam emitted from a charged particle source and irradiate a specimen;a visual field movement ...

Method and device for manipulating particle beam

A method of manipulating an electron beam is disclosed. The method comprises transmitting the beam through a phase mask selected to spatially modulate a phase of the beam over a cross-section thereof.

PLASMA PROCESSING SYSTEM

A plasma processing system has been disclosed. The plasma processing system includes an electrostatic chuck (ESC) and an edge ring assembly. The edge ring assembly has a conductive ring configured to generate an electric field to adjust the direction of ions. 1. A plasma processing system , comprising:an electrostatic chuck (ESC); and a base ring laterally surrounding the ESC and having a groove;', 'a conductive ring being a toroid with a polygonal section, the polygonal section having a plurality of flanges extending away from a center of the polygonal section, a portion of the plurality of flanges being accommodated within the groove of the base ring; and, 'an edge ring assembly surrounding the ESC, the edge ring assembly comprisinga cover ring coupleable over the conductive ring, a remaining portion of the plurality of flanges being covered by the cover ring.2. The system in claim 1 , further comprising a DC power supply coupled to the conductive ring.3. The system in claim 2 , wherein a supplied voltage of the DC power supply ranges from 0 to 300V claim 2 , a frequency of the DC power supply ranges from 1 KHz to 10 MHz claim 2 , and a duty ratio of the DC power supply ranges from 10% to 90%.4. The system in claim 1 , further comprising a RF power supply coupled to the conductive ring.5. The system in claim 4 , wherein a supplied power of the RF power supply ranges from 0 to 500 W.6. The system in claim 1 , wherein the cover ring is made of at least one material including quartz claim 1 , silicon claim 1 , ceramics or Vespel.7. The system in claim 1 , wherein the conductive ring is made of at least one material including silicon claim 1 , carbon or aluminum.8. The system in claim 1 , wherein the plurality of flanges being four flanges claim 1 , three of the four flanges being embedded within the groove of the base ring and one of the flanges being covered by the cover ring.9. The system in claim 1 , wherein the plurality of flanges extending symmetrically from ...

MEASURING SPHERICAL AND CHROMATIC ABERRATIONS IN CATHODE LENS ELECTRODE MICROSCOPES

An electron microscope system and a method of measuring an aberration of the electron microscope system are disclosed. A method of controlling an aberration of an electron microscope includes obtaining a dispersed energy distribution for electrons at a diffraction plane of the electron microscope and placing an aperture at a selected location of the dispersed energy distribution in the diffraction plane. The method measures displacement of an image of the aperture in an image plane of the electron microscope for the selected location of the aperture. The method determines an aberration coefficient of the electron microscope from the measured displacement and the selected location of the aperture and alters a parameter of an element of the electron microscope to control the aberration of the electron microscope based at least in part on the determined aberration coefficient. 1. A method of controlling an aberration of an electron microscope , comprising:obtaining a dispersed energy distribution for electrons at a diffraction plane of the electron microscope;placing an aperture at a selected location of the dispersed energy distribution in the diffraction plane;measuring displacement of an image of the aperture in an image plane of the electron microscope for the selected location of the aperture;determining an aberration coefficient of the electron microscope from the measured displacement and the selected location of the aperture; andaltering a parameter of an element of the electron microscope to control the aberration of the electron microscope based at least in part on the determined aberration coefficient.2. The method of claim 1 , wherein the electron microscope includes an optical element for controlling an electron beam of the electron microscope claim 1 , the method further comprising altering a setting of the optical element to produce an aberration at the optical element to control the aberration of the electron microscope.3. The method of claim 2 , ...

CHARGED PARTICLE BEAM WRITING APPARATUS, CHARGED PARTICLE BEAM WRITING METHOD, AND A NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM

Position shifts caused by charging phenomena can be corrected with high accuracy. A charged particle beam writing apparatus includes an exposure-amount distribution calculator calculating an exposure amount distribution of a charged particle beam using a pattern density distribution and a dose distribution, a fogging charged particle amount distribution calculator calculating a plurality of fogging charged particle amount distributions by convoluting each of a plurality of distribution functions for fogging charged particles with the exposure amount distribution, a charge-amount distribution calculator calculating a charge amount distribution due to direct charge using the pattern density distribution, the dose distribution, and the exposure amount distribution, and calculating a plurality of charge amount distributions due to fogging charge using the plurality of fogging charged particle amount distributions, a position shift amount calculator calculating a position shift amount of a writing position based on the charge amount distribution due to direct charge and the plurality of charge amount distributions due to fogging charge, a corrector correcting an exposure position using the position shift amount, and a writer exposing the corrected exposure position to a charged particle beam. 1. A charged particle beam writing apparatus that writes a pattern on a substrate on a stage by causing a deflector to deflect a charged particle beam , the charged particle beam writing apparatus comprising:a pattern-density distribution calculator virtually dividing a writing region of the substrate in a mesh-like manner and calculating a pattern density distribution indicating an arrangement ratio of the pattern for each mesh region;a dose distribution calculator calculating a dose distribution indicating a dose for each mesh region using the pattern density distribution;an exposure-amount distribution calculator calculating an exposure amount distribution of the charged particle ...

HIGH-ENERGY ION IMPLANTER, BEAM COLLIMATOR, AND BEAM COLLIMATION METHOD

A beam collimator includes a plurality of lens units that are arranged along a reference trajectory so that a beam collimated to the reference trajectory comes out from an exit of the beam collimator. Each of the plurality of lens units forms a bow-shaped curved gap and is formed such that an angle of a beam traveling direction with respect to the reference trajectory is changed by an electric field generated in the bow-shaped curved gap. A vacant space is provided between one lens unit of the plurality of lens units and a lens unit that is adjacent to the lens unit. The vacant space is directed in a transverse direction of the collimated beam in a cross section that is perpendicular to the reference trajectory. An inner field containing the reference trajectory is connected to an outer field of the plurality of lens units through the vacant space. 1. A beam collimator of an ion implanter , comprising:a plurality of acceleration and/or deceleration lens units that are arranged along a reference trajectory so that a beam collimated to the reference trajectory comes out from an exit of the beam collimator; anda vacuum container that surrounds the plurality of lens units,wherein each of the plurality of lens units forms a bow-shaped curved gap defined by at least two electrode sections and is formed such that an angle of a beam traveling direction with respect to the reference trajectory is changed by an electric field generated in the bow-shaped curved gap,wherein an electrode section on one side of one lens unit of the plurality of lens units and an electrode section on the other side of a lens unit adjacent to the lens unit are formed to have the same potential, andwherein a vacant space is provided between one lens unit of the plurality of lens units and a lens unit adjacent to the lens unit, the vacant space being directed in a direction that perpendicularly intersects a beam collimation plane on the reference trajectory, and an inner field containing the ...

Electron Microscope and Method of Measuring Aberrations

An electron microscope capable of measuring aberrations accurately is provided. The microscope is adapted to obtain scanning transmission electron (STEM) images by detecting electrons transmitted through a sample (S). The microscope ( 100 ) includes a segmented detector ( 20 ) having a detection surface ( 23 ) for detecting the electrons transmitted through the sample (S). The detection surface ( 23 ) is divided into detector segments (D 1 -D 16 ) for detecting the electrons transmitted through the sample (S). The microscope ( 100 ) further includes an aperture plate ( 30 ) for limiting the active areas of the detector segments (D 1 -D 16 ) on which the electrons impinge.

CHARGED-PARTICLE MICROSCOPE WITH ASTIGMATISM COMPENSATION AND ENERGY-SELECTION

A method of producing a corrected beam of charged particles for use in a charged-particle microscope, comprising the following steps: 1. A method of producing a corrected beam of charged particles for use in a charged-particle microscope , comprising:providing a non-monoenergetic input beam of charged particles; and a stigmator, thereby producing an astigmatism-compensated, energy-dispersed intermediate beam with a particular monoenergetic line focus direction; and', 'a beam selector, comprising a slit that is rotationally oriented so as to match a direction of the slit to said line focus direction, thereby producing an output beam comprising an energy-discriminated portion of said intermediate beam., 'passing said input beam through an optical module comprising a series arrangement of2. A method according to claim 1 , wherein:stigmator is used to mitigate a first, systematic astigmatism effect; andbeam selector is used to address a second, parasitic astigmatism effect.3. A method according to claim 2 , wherein;said first, systematic astigmatism effect is associated with eccentric lens traversal by said input beam; andsecond, parasitic astigmatism effect is associated with positioning errors in optical components upstream of the beam selector.4. A method according to claim 1 , wherein:beam selector comprises an opaque plate containing a plurality of slits of different orientations; andparticular slit is selected by effecting appropriate relative motion of said plate and said intermediate beam.5. A method according to claim 1 , wherein said beam selector comprises an opaque plate having a slit of adjustable orientation.6. A corrector device for use in a charged-particle microscope claim 1 , characterized in that it comprises:input for a non-monoenergetic input beam of charged particles; and stigmator, for producing an astigmatism-compensated, energy-dispersed intermediate beam with a particular monoenergetic line focus direction; and', 'beam selector, comprising a ...

CHARGED PARTICLE BEAM DEVICE AND ABERRATION CORRECTION METHOD FOR CHARGED PARTICLE BEAM DEVICE

A charged particle beam device using a multi-pole type aberration corrector includes: a charged particle source which generates a primary charged particle beam; an aberration correction optical system which corrects aberrations of the primary charged particle beam; a detection unit which detects a secondary charged particle generated from a sample irradiated with the primary charged particle beam whose aberrations have been corrected; an image forming unit which forms a charged particle image of the sample from a signal obtained by detecting the secondary charged particle; an aberration correction amount calculation unit which processes the charged particle image, separates aberrations having different symmetries, selects an aberration to be preferentially corrected from the separated aberrations, and calculates a correction amount of the aberration correction optical system; and an aberration correction optical system control unit which controls the aberration correction optical system based on the calculated correction amount. 1. A charged particle beam device , comprising:a charged particle source which generates a primary charged particle beam;an aberration correction optical system which corrects aberrations of the primary charged particle beam generated from the charged particle source;a detection unit which detects a secondary charged particle generated from a sample irradiated with the primary charged particle beam whose aberrations have been corrected by the aberration correction optical system;an image forming unit which forms a charged particle image of the sample from a signal obtained by detecting the secondary charged particle by the detection unit;an aberration correction amount calculation unit which processes the charged particle image formed by the image forming unit, separates aberrations having different symmetries in the primary charged particle beam, selects an aberration to be preferentially corrected from the separated aberrations, and ...

MULTIPOLE LENS, ABERRATION CORRECTOR USING SAME, AND CHARGED PARTICLE BEAM DEVICE

Provided is a winding type aberration corrector that generates a multipole field, in which mechanical positional accuracy required to dispose the current wires can be mitigated. For this purpose, a multipole lens constituting the aberration corrector includes a magnetic core, and a plurality of current wires, in which a plurality of grooves are provided in an inner wall of the magnetic core, centers of the plurality of grooves being disposed axisymmetrically relative to a central axis of the magnetic core, and main wire portions of the plurality of current wires are respectively disposed in the plurality of grooves of the magnetic core. 1. A multipole lens comprising:a magnetic core; anda plurality of current wires, whereina plurality of grooves are provided in an inner wall of the magnetic core, centers of the plurality of grooves being disposed axisymmetrically relative to a central axis of the magnetic core, andmain wire portions of the plurality of current wires are respectively disposed in the plurality of grooves of the magnetic core.2. The multipole lens according to claim 1 , whereineach of the plurality of grooves includes a taper portion expanding toward the inner wall, and an inner chamber in which the main wire portion of each current wire is disposed.3. The multipole lens according to claim 1 , whereineach current wire has a connection portion that guides each main wire portion into each groove from an outside of the magnetic core, or guides the main wire portion from inside the groove to the outside of the magnetic core, anda non-magnetic spacer is disposed between the connection portions of the current wires and the magnetic core.4. The multipole lens according to claim 1 , whereineach current wire has a connection portion that guides each main wire portion into each groove from an outside of the magnetic core, or guides the main wire portion from inside the groove to the outside of the magnetic core,the multipole lens further comprises magnetic lids ...

MULTIPLE ELECTRON BEAMS IRRADIATION APPARATUS

A multiple electron beam irradiation apparatus includes a shaping aperture array substrate to form multiple primary electron beams, a plurality of electrode array substrates stacked each to dispose thereon a plurality of electrodes each arranged at a passage position of each of the multiple primary electron beams, each of the multiple primary electron beams surrounded by an electrode of the plurality of electrodes when each of the multiple primary electron beams passes through the passage position, the first wiring and the second wiring applied with one of different electric potentials, and a stage to mount thereon a target object to be irradiated with the multiple primary electron beams having passed through the plurality of electrode array substrates, wherein, in each of the plurality of electrode array substrates, each of the plurality of electrodes is electrically connected to either one of the first wiring and the second wiring. 1. A multiple electron beam irradiation apparatus comprising:a forming mechanism that forms multiple primary electron beams;a plurality of electrode array substrates each that disposes thereon a plurality of electrodes each being arranged at a passage position of each of the multiple primary electron beams, the plurality of electrode array substrates being stacked, the each of the multiple primary electron beams being surrounded by an electrode of the plurality of electrodes in a case where the each of the multiple primary electron beams passes through the passage position;a first wiring and a second wiring that are applied with one of different electric potentials; anda stage that mounts thereon a target object to be irradiated with the multiple primary electron beams having passed through the plurality of electrode array substrates,wherein, in each of the plurality of electrode array substrates, each of the plurality of electrodes is electrically connected to either one of the first wiring and the second wiring.2. The apparatus ...

CHARGED-PARTICLE-BEAM DEVICE AND METHOD FOR CORRECTING ABERRATION

In aberration measurement, a focus or an inclination angle of a beam is changed to extract a characteristic amount from plural images of an electron microscope, so that an aberration coefficient indicating the size and direction of aberration is obtained. However, when the aberration is extremely large, the electron microscope images are greatly distorted, which causes difficulties in extraction of the feature amount. 1. A charged-particle-beam device comprising:a charged-particle-beam source;a charged-particle optical system that irradiates a specimen with charged particles emitted from the charged-particle-beam source;an aberration corrector that corrects an aberration of the charged-particle optical system;a control unit that controls the charged-particle optical system and the aberration corrector;a through-focus imaging unit that obtains a plurality of Ronchigrams in which a focal position of the charged-particle optical system is changed; andan aberration calculation unit that divides the obtained Ronchigram into a plurality of local areas, and calculates the amount of the aberration based on line focuses detected in the local areas.2. The charged-particle-beam device according to claim 1 ,wherein the aberration calculation unit fits iso-intensity lines in the local areas using ellipses and detects the line focuses based on the ellipses for the fitting.3. The charged-particle-beam device according to claim 2 ,wherein the iso-intensity lines in the local areas are calculated by an autocorrelation function or Fourier transform.4. The charged-particle-beam device according to claim 1 , further comprising:an input unit through which a setting value is input,wherein the through-focus imaging unit changes the focal position in a range based on the input setting value.5. The charged-particle-beam device according to claim 4 ,wherein the line focuses are detected in the local areas of each obtained Ronchigram on an under-focus side and on an over-focus side, andthe ...

Charged Particle Beam Device

Provided is a multifunctional charged particle beam device capable of inclining a beam with little aberration. The aberration is corrected by forming a local divergent field with a multipole, parallel current lines, or the like, matching the beam axis with the local divergent field via a conventional rotationally symmetric lens, deflector or astigmatism corrector, and counteracting an aberration occurring from another rotationally symmetric convex lens field. 1. A charged particle beam device comprising:a charged particle source;a rotationally symmetric lens system through which a charged particle beam generated from the charged particle source passes;an electromagnetic field generating unit configured to generate N-fold symmetry electromagnetic field (N is a natural number of 2 or more) around the optical axis; andan entrance deflector arranged at the entrance side of the electromagnetic field generating unit and configured to deflect the charged particle beam, whereinan aberration of the charged particle beam due to the lens system is corrected by deflecting the charged particle beam passing through the lens system via the entrance deflector to make the charged particle beam to enter a local divergent field formed in an off-axis region of the N-fold symmetry electromagnetic field.2. The charged particle beam device according to claim 1 , whereinthe electromagnetic field generating unit includes N parallel current lines arranged by angle division number N around the optical axis outside a space through which the charged particle beam passes.3. The charged particle beam device according to claim 2 , whereinthe charged particle beam is made to enter a range of a radius (R/3) from the center except for the center, where, as viewed in a plane perpendicular to the rotational symmetry axis of the lens system, the center is the position of the rotational symmetry axis, and R is a distance from the center to the parallel current lines.4. The charged particle beam device ...

CONTINUOUSLY VARIABLE APERTURE

An apparatus for a transmission electron microscope includes a housing configured to be attached to the transmission electron microscope; a plunger received in the housing and movable relative to the housing; a first set of pieces coupled to the plunger, the first piece being configured to move relative to the housing in response to the plunger moving relative to the housing; and a second set of pieces positioned in a fixed spatial relationship relative to each other, the second set of pieces and the first set of pieces forming a perimeter of an opening, an extent of the opening being continuously variable by moving the first set of piece relative to the second set of pieces. 1. An apparatus for a transmission electron microscope , the apparatus comprising:a housing configured to be attached to the transmission electron microscope;a plunger received in the housing and movable relative to the housing;a first piece coupled to the plunger, the first piece being configured to move relative to the housing in response to the plunger moving relative to the housing;a second piece; anda third piece angled relative to the second piece, the first, second, and third pieces being arranged relative to each other to form a triangularly shaped opening.2. The apparatus of claim 1 , wherein an extent of the triangularly shaped opening is variable by moving the first piece relative to the second and third pieces.3. The apparatus of claim 1 , wherein claim 1 , when the housing is attached to the transmission electron microscope claim 1 , the triangularly shaped opening is in a plane that is perpendicular to a direction of travel of an electron beam of the transmission electron microscope.4. The apparatus of claim 3 , wherein the first claim 3 , second claim 3 , and third pieces are physically separated from each other along a direction that is parallel to the direction of travel of the electron beam.5. The apparatus of claim 1 , wherein the housing is configured to attach to the ...

PLASMA PROCESSING SYSTEM

A plasma processing system is disclosed. The plasma processing system includes an electrostatic chuck (ESC) and an edge ring assembly surrounding the ESC. The edge ring assembly includes a coupling ring and temperature modifying elements disposed within the coupling ring. 1. A plasma processing system for processing a wafer , comprising:an electrostatic chuck (ESC) defining a plane; and a coupling ring disposed on a step edge of the ESC; and', 'temperature modifying elements disposed within the coupling ring, including a plurality of first temperature elements and a plurality of second temperature elements, each of the temperature modifying elements having a first temperature side and a second temperature side projectively overlapping each other;', 'wherein the first temperature sides of the first temperature elements are arranged to be planarly adjacent to the second temperature sides of the second temperature elements;', 'wherein the plurality of the first temperature elements are circumferentially distributed around the coupling ring at substantially equidistance; and', 'wherein the plurality of the second temperature elements are circumferentially distributed around the coupling ring at substantially equidistance., 'an edge ring assembly surrounding the ESC, the edge ring assembly comprising2. The system of claim 1 , wherein each of the temperature modifying elements comprises:first thermoelectric elements and second thermoelectric elements arranged to form a planar pattern; andconductive plates correspondingly electrically coupling one of the first thermoelectric elements and one of the second thermoelectric elements in series.3. The system of claim 2 , wherein the planar pattern includes a single bar note pattern having two note ends coupled to terminals of a U shaped stem.4. The system of claim 3 , wherein a first temperature element of the plurality of first temperature elements forms an interlocking pair with a second temperature element of the plurality of ...