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For example before detailed embodiment, an exemplary environment embodiment examples can be implemented in a number advantageously disclosed.

Figure 1 shows a device according to one embodiment of the present invention example also applies to determine in lithography. the device:

Radiation beam (e.g., EUV radiation or UV radiation) - (B) (condition) an illumination system configured to condition a (this it pushes illumination) (IL);

- (E.g., mask) (MA) and configured to support a patterning device, the patterning device configured to predetermined parameters range number 1 positioner (PM) connected to the support structure (e.g., mask table) (MT);

- Substrate (e.g., resist - coated wafer) (W) and to maintain, configured to exactly position the substrate in accordance with predetermined parameters number 2 positioner (PW) coupled to the substrate table (e.g., wafer table) (WTa or WTb); and

(E.g., including 1 or more dies) of the substrate (W)- (C) patterning device onto a target portion (MA) (B) pattern imparted to the radiation beam by a projection system configured to project (e.g., refractive projection lens system) comprises (PS).

Illumination system including a radiation directing, molding, and/or number for the, refractive, reflective, magnetic, electromagnetic, electrostatic or other type of optical components, or any combination thereof such as characterized in various types of optical components can be.

Mask support structure supporting a patterning device, in that the weight to be coated. The orientation of the patterning device, the design of a lithography device, and a process for patterning device vacuum maintained in an environment such as another conditions whether dependent manner holds the patterning device. Mask patterning device support structure in order to maintain mechanical, vacuum, electrostatic, or other clamping techniques can be. Mask support structure, e.g. it is fixed or movable frame which can also be a or table. Mask support structure, patterning device e.g. the projection system can be insure that desired position. The "reticle" or "mask" the term "patterning device" specification of any usage can be considered as will come under general terms in the synonym.

The term "patterning device" used in the specification, to produce target parts pattern can be any pattern to allocate differently characterized device referring to the widely used should be interpreted. The pattern imparted to the radiation beam, e.g. said phase - shifting feature pattern (phase-a shifting feature) or when the so-called assist features (assist feature) including, in parts of a does not coincide exactly with a desired pattern of accomplishing that it may significantly. Generally, the pattern imparted to the radiation beam generated within the integrated circuit may correspond to a particular functional layer target parts are disclosed.

A patterning device be a transparent type or reflective type. Examples of mask patterning device, programmable mirror array, and programmable LCD panel comprising the. A known lithographic mask sacrificial, binary (binary) type, alternating phase - shifted and phase shifting masks shift type - type, and various hybrid (hybrid) comprising the mask type. In one example of a programmable mirror array configuration and a matrix of small mirrors, each individually adapted to reflect incident radiation beam in different directions can be inclined. Inclined mirror are reflected by mirror matrix imparts a radiation beam pattern.

That the term "projection system" used in the specification, the exposure radiation, such as the use of an immersion liquid or the use of or vacuum if appropriate for other factors, refractive, reflective, catadioptric (catadioptric), magnetic, electromagnetic and electrostatic optical system, or any combination thereof is characterized in including any types of projection system interfaces should be interpreted widely. The specification of the term "projection lens" any usage "projection system" can be taken as the true more general terms in the synonym.

As shown in the specification, the device (e.g., employing output of a) consists of transmission type. Alternatively, the device (e.g., the aforementioned bar types such as programmable mirror array or connected, that employ a reflective mask) can be reflection-shaped configuration.

Lithographic device 2 is two (dual stage) or more substrate table (and/or composed of table 2) can be configured in the form having. Under such "multiple stage" additional table can be used in parallel, or 1 or more while in the workpiece W is pattern 1 or more other table tasks can be step is carried out.

In addition, lithographic device in order to fill the space between the projection system and the substrate, which has a refractive index of at least part of the relatively high liquid, for example water can be covered with ticket including configuration can be. In addition, immersion liquid lithographic device of other users in the spaces, e.g. between the mask and the projection system can be applied. Dipping technique includes projection system (numerical aperture) opening be increasing contrast techniques well known. The specification such as used in the term "immersion" structure rather than a web page should all be immersed in the liquid, exposure of liquid only have to be placed between the projection system and the substrate means that the substrate.

The reference also 1, this it pushes the illumination radiation from the radiation source (SO) (IL) receive the light beams to each other. For example, when source excimer laser (excimer laser), and lithographic device included is the ability to be a group of said source. In this case, source is deemed to form part of the lithographic device does not, e.g. radiation beam oriented mirror and/or a beam expander including beam delivery system suitable (beam expander) with the aid of (BD), from this it pushes (IL) illumination source (SO) are passed through a substrate. In other cases, e.g. when the pressure mercury lamp source, said source be a integral part of the lithographic device. Said illumination source (SO) and this it pushes (IL) is, if necessary beam delivery system (BD) can be referred to as referred with radiation system.

This it pushes (IL) illumination radiation beam angular intensity distribution is a adjuster (AD) can be. Generally, this it pushes the intensity distribution in the plane of illumination and/or exchangeable at least size (typically, each multi-outer - σ and an inner - σ) can be adjusted. In addition, the integrator (IN) and condenser such as this it pushes illumination (IL) (CO), various other components may be disclosed. Illumination for a desired uniformity and intensity distribution (uniformity) pushes shakes off allocate differently, can be used to condition a radiation beam.

(B) radiation beam support structure (e.g., mask table) (MT) (e.g., mask) being held on (MA) is incident on the patterning device, patterned by patterning device. If across said mask (MA), (B) includes projection system (PS) said radiation beam to pass through the same, this target portion on said substrate (W) (C) decodes a focus beam. Number 2 positioner (PW) (IF) location sensors (e.g., interferometer devices, scale, or capacitive sensor) with the aid of, for example in the path of radiation beam substrate table (WTa/WTb) (B) (C) to different placing can be accurately be moved to the target portion. Similarly, number 1 positioner (PM) and another position sensor (also not shown teeth to 1), mechanical (mask library) after recovery from e.g. mask library, or during a scan, in the path of a radiation beam (B) mask relative range (MA) can be used. Generally, the movement of the field mask table (MT)- stroke module (long a-stroke module: coarse positioning) and stage - stroke module can be realized with the aid of (short non-stroke module: fine positioning), which form a part of number 1 positioner (PM). Similarly, movement of the substrate table (WTa/WTb) field - stroke module and stage - the first metal module can be stroke, this portion of number 2 positioner (PW) formed on the substrate. When an n-sided polygon (scanner contrast), mask table (MT)- only be connected to an actuator stroke can be or clamped to the end.

Patterning device (e.g., mask) (M1 and M2) (MA) and substrate (W) (P1 and P2) mask alignment marks and substrate alignment marks using can be aligned. Although, in an illustrated substrate alignment marks of the first target portion of specified (dedicated) but, they target disposed in a space between disapproval [they are known as scribe - lane alignment mark (scribe-a lane alignment mark) engine]. Similarly, mask (MA) number is 1 or more dies on which ball in situations where, mask alignment marks are used to dies can be positioned between. Device between features, injection may be small alignment markers may also be included, possible markers is small patterned or other process conditions different from adjacent features requires preferably do not become confused. One embodiment of the alignment system for detecting alignment markers examples described further below.

At least 1 or more device receive a next modes shown can be used in:

- Step mode, mask table (MT) and the substrate (WTa/WTb) remains stationary while basically, the entire pattern imparted to the radiation beam pattern is projected onto target portion suffer from S. [i.e., a single static exposure (single static exposure)] (C). Then, the substrate table (WTa/WTb) X and/or Y direction (C) different target portion is exposure so that it can be shifted. Step mode, maximum size of the exposure field of the target portion imaged in a single static exposure in which size of (C) number valve timing of the other.

In scan mode -, mask table (MT) and the substrate (WTa/WTb) pattern imparted to the radiation beam projected on target portion (C) [i.e., a single dynamic exposure (single dynamic exposure)] are synchronously during scanning. Mask table (MT) table for a substrate (WTa/WTb) speed and direction of the magnification of the projection system (PS) (reduction) and Image inversion properties can be determined by. In scan mode, maximum size of the exposure field of the single dynamic process is performed (an orientation which does not scanned to) the target number while the valve timing of the width, the length of the scanning operation (scanning direction) determines the target height.

In another -, mask table (MT) is a programmable patterning device maintaining maintained essentially remains stopped, pattern imparted to the radiation beam projected on target portion (C) during the substrate table (WTa/WTb) is moved or scanned substrate. The mode, generally a pulsed radiation source (pulsed radiation source) which is adapted, after travelling every programmable patterning device of a substrate table (WTa/WTb), which has an inner side of radiation pulse required during scan or updated according other. This operating mode the previous stated types such as programmable mirror array using programmable patterning device such as hereinafter for the maskless lithographic (maskless lithography) can be applied.

In addition, in the above-mentioned use modes for combining and/or modified, or completely disapproval employed to other modes.

Lithographic device (LA) is table of table 2 can be exchanged (e.g., substrate and table 2) and 2 (WTa, WTb) exposure station and having a plurality of stations - the measuring station -, so-called dual stage type are disclosed. For example, one table substrates on the exposure while the exposure station, other substrates can be loaded onto another substrate table determines various steps can be performed. The level sensor (LS) surface of the substrate using the step number mapping and, (RF) reference frame alignment sensor (AS) supported by measuring the position of alignment markers on a substrate using can be. (IF) position sensor measuring the position of the table in the back-up server while measuring the exposure station station and measuring the position of the table, table number 2 position sensor can be traced in the location of the two stations number ball 1308. As another example, one table substrates on the exposure while the exposure station, substrate-free other table is in the measuring station waiting other (can be selectively measuring activity occurs). Has a different table includes one or more measurement device selectively different tools may have a (e.g., cleaning device). Substrate-free substrate exposure been performing measurements to an exposure station to move the substrate table with table is removed from layer having a loading position (example: measuring station) moves to. These multiple - table construction can be substantially increasing the throughput of the device.

As also shown in 2, lithographic device (LA) is occasionally referred to as lithography cell (LC) called a top cell (lithocell) or cluster and form part of the, is on the substrate before exposure (pre-a exposure) - - and after exposure (post-a exposure) process to perform device without using a tool. Typically, they spin coater (spin coater: SC) depositing resist layers, the exposed resist is developed to the faceplate (developer: DE), chill plate (chill plate: CH) and bake plate (bake plate: BK) without using a tool. The input/output ports (I/O1, I/O2) substrate handler or a robot (RO) it picks up and it raises, from substrates, said substrates between different process then displacing device, lithographic device delivers to loading bay (loading bay: LB). The devices are often collectively referred to as a track, the unit number through a lithographic device number (LACU) lithography system then the track number number plower supervision (supervisory control system: SCS) number which is the number of unit (TCU) itself by subjected. The, through a different device can be operated with foot processing maximize efficiency.

In addition, e.g. a patterning process designed, the number, preferably to a patterning process modeling the often can be monitored. The, typically pattern transfer steps, a patterning process of at least one step of at least one mathematical model describing 1308. ball number. In one embodiment, measuring or design pattern using the patterned substrate patterning process of patterning device which ball number form for simulating whether a mathematical model of how one or more patterned utilizing process simulation can be performed. In lithography modeling and/or lithographic projection device for simulating an exemplary flow 13 also degree are shown in the nanometer range. As the object to be recognized, said model which can exhibit different patterning process, described hereinafter all models need not necessarily be disclosed. Source model (1300) optical properties of illumination of a substrate (radiation intensity distribution, including bandwidth and/or phase distribution) by a goniophotometer. Said source model (1300) opening be setting, illumination sigma (σ) setting and for any particular illumination shape (e.g., annular, 4 tuning, such as dipole - off beam according to a desired shape) but including a lighting optical properties, the one number are not disclosed. Projection optical model (1310) includes projection optics optical properties of (projection optics caused by radiation intensity distribution and/or phase distribution including changes on) by a goniophotometer. Projection optical model (1310) is aberration, distortion, at least one refractive index, and one or more physical size, including one or more physical dimensions can exhibit optical properties of projection optics are configured to like. Design layout model (1320) formed by a substrate or patterning device features of the construction of the optical characteristics of the design layout is a graphical representation (a given design layout comprising radiation intensity distribution and/or phase distribution caused by changes on) by a goniophotometer. Design layout model (1320) is, for example entirely to the citation U.S. patent number 7,587,704 call reference synthesized as disclosure, physical patterning device can exhibit one or more physical properties. Lithographic projection device used in patterning device is changed because, at least illumination and projection optics including lithographic projection device preferably separate from the remainder of the optical characteristic of an optical characteristic of a patterning device.

Aerial Image (1330) comprises a source model (1300), projection optical model (1310) and design layout model (1320) from can be simulated. (AI) aerial Image substrate level in radiation intensity distribution are disclosed. Lithographic projection device (e.g., illumination, and projection optical system characteristics of patterning device) optical properties of aerial Image is affecting the other.

Aerial Image resist layer is on a substrate by exposure and, as potential of aerial Image includes "resist Image" (RI) resist layer transferred to the substrate. Resist Image (RI) can be defined in the spatial distribution of the resist layer is a solvent. Resist Image (1350) includes a resist model (1340) aerial Image using (1330) from can be simulated. Aerial Image can be used to evaluate a resist model is a resist Image from, and examples can be found in U.S. patent application Official Gazette number US2003 provided 0157360 call, its disclosure content generally the specification with reference to the multiple myelomas are included. Resist model is typically electrode for use in characteristics (e.g., exposure, post-exposure baking and developing chemical processes occurring during the influence of) relative only.

The simulation of lithography, for example, resist Image in contour and/or CD can be predicted. Thus, the aim of the simulation, e.g., printed pattern edge arrangement and/or aerial Image intensity slope and/or accurate predictions CD or the like are disclosed. These values are displayed is compared with predetermined design, e.g. a patterning process modifies, identify where deficiency can be expected to take place. The intended design generally relates to file format such as GDSII or OASIS or other standardized digital file format can be ball number is defined pre - OPC design layout.

The surface design, referred "clip" one or more can be identified. In one embodiment, can be used any number of clip but, in complex design layout pattern (e.g., about 500 to 800,000 of clip) indicating clip set is taken out. A small portion of such pattern or clip design (i.e., circuit, cell or pattern) represents, more specifically clip is typically required special attention and/or verifying a small portion by a goniophotometer. I.e., the clip may be part of the design layout, design layout similar to a portion of and or similar behavior, wherein one or more critical features experience (including clip the performance of a customer number), chip simulation execution of a Kevlar or fully identified by other. One or more clip test pattern or gauge pattern can be included. A printer with deficiency expected clip suitable for a hot spot.

Initial clip set, requires special attention such as publicly known whether the second critical features within one or more design layout by the customer on the basis of a priori 1308. ball number. Alternatively, in another embodiment, an initially larger set of clip includes one or more critical features to identify regions of labeling (such as machine vision) by using automated or manual algorithm can be extracted from the overall design layout.

In addition, processed by lithography device (e.g., exposure) to a substrate to be treated as exactly consistent, the processed substrate is checked based on the overlay error between subsequent layers, line thickness, such as critical dimension (CD) measuring one or more characteristics of the preferred. The error is detected, treatment on behalf of the at least one subsequent substrate can be adjustments are made. A similar arrangement is still region and a second surface to be processed is transmitted quickly when can be useful in particular can be performed quickly. In addition, peeling away the substrate that have already been treated (in order to improve the yield) in off or rework, performing a pattern on a substrate transfer deficiency known that there can be avoid. If deficiency only target portion of the substrate, only good target portion can be further pattern transfer is performed. Other possibilities to compensate for applying error process step setting are disclosed. Trim etching step of time may change resulting from a board-to-board CD lithography process steps can be adjusted to compensate.

In a similar manner, patterning device (e.g., reticle) to determine whether any errors on the patterning device pattern is capable of being tested disclosed. This check registration error (e.g., design placement compared with "recorded" pattern on the patterning device positioned between a portion of a layout of difference) and/or patterning device (e.g., feature width, feature a vehicle) dimension of of a pattern on can be determine.

Inspection device which are used to determine one or more properties of the substrate, in particular one or more properties of different layers of different substrate or the same substrate and/or substrate across a and/or different each layer across a substrate, such as substrate at a substrate, determine whether changes are used to determine how. Inspection device is lithographic device (LA) or may be integrated into a stand-alone device or a top cell (lithocell) implementation being. For most rapid to enable measurement, inspection device includes measuring at least one of pattern transfer immediately after patterning resist layer preferably. However, resist potential pattern (latent pattern) may have very low contrast - e.g., the portion of the polymer resist exposure radiation very small refractive index difference between the resist -, all of the available measurement sensing device sufficient latent pattern are not correct. The, conventional post-exposure baking (PEB) step performed on substrates patterned than number 1 after measurements are made can be, e.g., of exposing photoresist exposure unlaminated portion of the contrast between portion can be increased. At this stage, in the resist pattern of the semi - (semi-a latent) can be referred to as potential. Is developed resist Image (e.g., of exposing photoresist or unexposed part number for reparing over) or etching after pattern transfer such as, measured resist Image measuring a predetermined time interval lapses disclosed. The latter possibility of likelihood of wrong number but the still useful information such as number relayed rework process can be number.

One or more inspection device object (semiconductor substrate, such as patterning device) determining characteristics in different take different can take. For example, an object is to provide illuminating radiation directed to object inspection device for detecting electromagnetic radiation photons to can be. This inspection device is field inspection device can be referred to as brightness (bright-a field). Brightness field inspection device is, e.g., radiation having a wavelength of 150 provided 900 nm range can be. Inspection device is based on images, i.e. surface of the imaging and/or diffraction based, i.e. diffraction radiation can be measured. Inspection device includes a number article features (e.g., mask substrate or features formed using integrated circuit features of a) inspect and/or certain measure target (e.g., overlay target, focus/dose target, thermal-CD gauge) can be inspecting.

For example, semiconductor wafer inspection is primarily carried out to optically-of - resolution tool (brightness field inspection). However in some cases a specific features are too small measuring brightness measured effective field inspection cannot. For example, in field testing of semiconductor features thereof can difficult deficiency of brightness. Furthermore, according to the processor time, a patterning process (e.g., using photolithography made semiconductor feature) to be processed which is made using the etc. in addition a high feature density is increased more in many cases. The future semiconductor node, small deficiency (e.g., pattern shape deficiency, such as electrical deficiency) node small measuring for measuring high feature density, brightness field inspection result from the resolution of the current optical inspection (scalability) expandability of the conductive to each other. In addition brightness field check and/or capture speed relatively low capture rate can be given unnecessary rate is increased, this increase in time and expense can be brightness using field inspection.

The, and higher resolution inspection technique is used preferably. Examples of the electron beam inspection techniques flow tides. A small spot size of the electron beam focusing in inspecting comprising electron beam are disclosed. Image of a subject object (hereinafter referred to as scanning electron beam) across beam relative movement between a number 2 difference and/or the backscatter electron specific electronic detector formed. Image data then is processed to identify other deficiency.

Thus, in one embodiment, inspection device object is on the wafer (e.g., some or all of devices such as integrated circuit structure) Image calculating electron beam testing device (e.g., scanning electron microscope (SEM) with the same or similar) can be a. Figure 3 shows a also electron beam testing device (200) for example etched in one embodiment. Electronic won (201) emitted from a main electron beam (202) is provided with a (203) after collected by, beam deflector (204), E × B deflector (205) and objective lens (206) through table (101) on the object (100) focus irradiated from each other.

Object (100) the electron beam (202) decodes the, object (100) 2 from an electron is generated. 2 Biased toward secondary electrons. E × B deflector (205) 2 are detected by an electron detector (207) are detected by. 2 Dimensional electron beam Image is, for example, beam deflector (204) of the electron beam or X or Y direction by 2 dimensional scanning synchronized with the beam deflector (204) by electron beam (202) synchronized with the repeated scanning, X or Y direction the other table (101) by object (100) connects the continuous, can be obtained by detecting electrons generated from the sample. Thus, in one embodiment, electron beam testing device is electron beam electron beam testing device which can be ball number by angular range (e.g., beam deflector (204) is electron beam (202) number to the rotating range) for defined by electron beam field. Thus, the system can be spatial range field of view electron impinging on the surface of spatial ranges (surface is moved relative to the field and can be fixed or can).

2 Difference electron detector (207) by detected signals are analog/digital (A/D) converter (208) converted into the digital signal by, the digital signal is Image processing system (300) for directing the vehicle from the outside. In one embodiment, Image processing system (300) means are (304) by all or part of a memory that stores a digital Image for processing (303) may have a. Processing unit (304) (e.g., a combination of hardware and software or hardware specially designed) digital Image is representative of the Image data set or digital process consists of. In addition, Image processing system (300) and corresponding data set reference database so as to store the digital Image storage medium (301) may have a. Display device (302) is Image processing system (300) connected so that it can be, the operator can perform an operation on the needs of the equipment with the aid of a graphical user interface.

Also shown in an example of the electron beam column inspection system which comprises a unitary device 3, generating a single electron beam, the electron beam column is a single number them and valuable minerals. However single electron beam column inspection system is 300 mm wafer of examining objects as long which can be returning. This smaller beam size requires a smaller deficiency and/or features can be measured by wind more deterioration. Small deficiency and/or feature to use smaller beam or pixels for detecting the noise and throughput can be loss (e.g., reduces damage since valve timing of the electron current object number). The electron currents increase throughput increased resolution but affecting the other.

The, single electron beam column inspection system throughput (e.g., per unit time inspection region) can be one number order mass production significantly in terms of current too slow for the disclosed. For example, the electron beam column field inspection throughput between about 3 - 4 single test order brightness differs be. Thus, when the pin is is bonded high-resolution inspection number wind. In one embodiment, brightness similar throughput based test field for an electron beam-based number hole is etched.

In one embodiment, the electron beam column (hereinafter, multi-beam column is provided multiple -) from a plurality of specific throughput is attained with electron beam can be increased by number. The, is a multiple of the individual beam array/matrix for generating an effective field of view of the side of the field of view can be extended by adding electron beam testing device multiple beams. For example, 100 m × 100 m of 10 micron pitch having micro micro view (e.g., 10x10 matrix beam (in a subject having a field of view each 10x10 microns)) can be to beam number. This beam arrangement includes a single beam oriented 10x10 microns than 100 times can be scanned object at a high rate. But such gain even insufficient thereof can.

The reference also 4, object (100) (e.g., semiconductor wafer, such as reticles) associated with multiple beams are shown examples of implementation of multiple - beam column electron beam testing system. In this case, object (100) each boundary (125) (not physically present but the object on "virtual" boundary) identified by a plurality of fields or die (120) having a predetermined wavelength. In one embodiment, the die has an object carrying out a portion of the slide groove. I.e., the semiconductor wafer when the object, the object corresponding die cut pieces, each die such as a semiconductor device is under or over. In one embodiment, the patterning of an exposure field of the lithographic device substrate field corresponding to the size of substrate. Comprising a plurality of fields can, where, for example, a patterning device pattern including a plurality of die number substrate. The object of Figure 4 very coarse shown has more fuel than general die/field. While rounded object are shown, it may be a different shapes. Object width (e.g., diameter) can be various. For example, implementation being 450 nm or 300 nm width. In one embodiment, the object is about 30 or more die/field, about 40 or more die/field, about 50 or more die/field, about 60 or more die/field, about 70 or more die/field, about 80 or more die/field, about 100 or more die/field, about 110 or more dice/field, about 120 or more dice/field, about 130 or more dice/field, about 140 or more dice/about 160 or more die/field, about 170 or more die/field, about 180 or more die/field, about 190 or more die/field, about 200 or more die/field, about 220 or more die/field, about 240 or more die/field, or about 260 or more dies can be/field.

As shown in fig. 4, object beam beam (100) for inspecting a combination view (400) a number substrate. In this example, 4 of beam which, each oriented identical field of view each of the bonds itself doesn't have a. In this case, each beam is coupled view (400) of Figure 4 4 of a few segments as expressed in the same field. Thus, in one embodiment, beam deficiency (410) including different portions of the object (e.g., field/die (120) or its partially) to checking the, coupled view (400) and closing a (100) relative movement between ball number encoded. In one embodiment, each beam coupled view (400) corresponding to the width of the viewing field of a general, fixed orientation said beam generally can be displaced with respect to said beam to said said object of examining objects can be. In addition, in one embodiment, binding view (400) in number for each viewing angle beam scanning electron beam object and relative movement between the pin is. In one embodiment, the object being in a generally fixed orientation, mobile (e.g., tilt) upon the beam causes each OTB scanning the beam. In one embodiment, the viewing field angle scanning the beam and object beam combined movement thereof can. Thus, in one embodiment, binding view (400) by closing a relative movement between, the plurality of beams comprises a plurality of field/die (120) or a portion thereof can be applied to different parts of an object such as a ball number, characteristic portion of an object and relative movement between a ball number is, coupled view (400) by scanning the beam into individual fields deficiency (410) including imaging an object with a etched.

Coupled view (400) and the respective beam also shown in view of its corresponding portion 4 may have a different shape. As described above, in one embodiment, a border of each beam spot view (400) the same as the portion of the range. In one embodiment, beam spots is smaller than a beam portion of the field of view, the beam view (400) moves relative to a ball to the number portion of between, corresponding to that portion of the viewing beam can be inspect the uppermost zone. In this embodiment, beam is beam view (400) between the number of move (e.g., tilt) relative movement can be, moved object visibility (400) and closing a relative movement between number can be caused. The movement of the other combinations properly 1308. ball number.

In one embodiment, measuring throughput and/or a smaller features ability each comprise at least one electron beam a plurality of electron beam columns (hereinafter, multi - hzfield column system) number a number can be improved. I.e., each column includes at least one electron beam (in one embodiment, at least one of the multi-beam column is provided by a plurality of the electron beam column) and a number , column 2 and/or backscatter electrons generated from a detector for measuring the difference of the object beam incident thereon. In one embodiment, the electron beam column selected from each of a plurality of the electron beam or electron beam columns in parallel with one or more other electron beam column of examining objects other. Thus, in one embodiment, may have a relatively small current for each beam is better resolution but, generally, plural column is relatively high overall current number nephrophathy trolley and inspection. In addition, the electron beam column is collected images in parallel using plural column compared to single throughput can be significantly increased.

The reference also 5, examples of very coarse, object (100) and related multiple - column electron beam testing system of multiple beams implementation example embodiment is shown disclosed. In this case, object (100) each boundary (125) (not physically present but the object on "virtual" boundary) identified by a plurality of fields or die (120) having a predetermined wavelength. In one embodiment, each field or die that makes use has assigned the electron beam column. In one embodiment, respective ones of a plurality of sets each including a plurality of field or die set assigned to it has electron beam column. In one embodiment, plural column includes a 1 dimensional array is ball number, preferably widest sufficient electron beam column to extend across a portion of the object having encoded number hole 1 dimensional array. In one embodiment, array 1 dimensional array direction normal to the direction of relative movement between the elongated object array across a object through efficiently scan the substrate. In one embodiment, the electron beam column consists of 2 dimensional array. In one embodiment, length/width of 2 dimensional array object number 1 and number 2 number 1 direction orthogonal to the length direction across the width of the object/across extended in a first direction. In one embodiment, rectangular array 2 dimensional array are disclosed. In one embodiment, 2 dimensional array have a shape conforming to the shape of the object. Thus, in the case of rounded object, arrangement is to create a rectangular array elements arranged in a circular arrangement or be a number for reparing over edge is diamond shaped.

In one embodiment, the object, object about 30 assigned to one or more electron beam column, object about 40 assigned to one or more electron beam column, assigned to one or more electron beam column object about 50, about 60 or object about 70 assigned to one or more electron beam column, assigned to one or more electron beam column object about 80, about 90 assigned to one or more electron beam column object, assigned to one or more electron beam column object about 100, about 110 assigned to one or more electron beam column object, object about 120 assigned to one or more electron beam column, assigned to one or more electron beam column object about 130, about 140 assigned to one or more electron beam column object, object about 150 assigned to one or more electron beam column, object about 160 assigned to one or more electron beam column, about 170 assigned to one or more electron beam column object, assigned to object about 180 or more electron beam column, assigned to about 190 or more electron beam column object, object assigned to the electron beam column about 200 or more water, about 220 or more object assigned to the electron beam column, about 240 assigned to one or more electron beam column or object object assigned to one or more electron beam column comprising an about 260 will. The object of Figure 5 very coarse shown and generally more fuel than has die/field. While rounded object are shown, it may be a different shapes. Object width (e.g., diameter) can be change.

As shown in fig. 5, a respective one of the plurality of beam object beam beam (100) for inspecting the viewing field (500) has. In this example, 5 of beam which, of each view (500) has. Thus, in one embodiment, beam deficiency (410) including different portions of the object in order to view (500) and closing a (100) relative movement between the beam and the relative movement between the efficiently generating encoded object ball number. In one embodiment, view (500) each of the each field or die effectively dedicated substrate. I.e., in one embodiment, a plurality of view most die or field (500) during single view (500) are inspection only. In one embodiment, the viewing field of a die or fields (500) is die or field of adjacent, including a not (none), most inspection substrate. In one embodiment, view (500) is, view (500) is a number associated die or field inspection and does not.

Thus, in one embodiment, view (500) and closing a (100) number ball to relative movement between the respective viewing (500) is different parts of their associated die or field testing substrate. In one embodiment, view (500) and the orientation of the secured relative to conventional, direct transfer of the object (500) moved with respect to each field or die to view each portion of (500) constituting other.

Viewing angle (500) each die or field of each portion positioned, each parallel to the die or field to another set of each beam portion of the inspection as follows. View (500) is card type corresponding to the size embodiment embodiment, beam is being generally fixed orientation, the object beam for scanning the beam causes moved with respect to each field or die. More generally, in one embodiment, the orientation of the object and is substantially fixed, each beam is moved relative to the object (e.g., gradient) scanning the beam causes each field or die each within the field of view. In one embodiment, beam scanning object beam will be bound to this motion threshold.

In one embodiment, view (500) and closing a (100) through relative movement between, (view (500) operating in) each beam is each field/die (120) different portions of furthermore, allowing for improved throughput for, different field/die (120) portions of the outer layer (e.g., beam and/or object by movement of each of the beams by scanning) of the viewing field (500) parallel beam in the horizontal direction with each other. I.e., each beam each field or die at the same beam inspection object projection with each other.

In one embodiment, each beam corresponding fields of view (500) may have a different shape 4 is also shown. In one embodiment, the boundary of each beam spot view (500) is within a range the same. In one embodiment, beam spot is smaller than the field of view of the beams, the beam to the viewing (500) to beam and the field of view corresponding to inspect the uppermost zone (500) encoded number effectively between the relative positions of the ball. Beam beam and move within the field of view (e.g., tilt) relative movement between number can be, direct transfer of the object (500) and closing a (100) can be moved relative movement between number. Other number combinations can be properly movement.

Figure 6 shows a object also each electron beam column (100) coated on one die or field corresponding to the electron beam column (600) including an array of very coarse representation example multi - column electron beam testing system of embodiment are disclosed. Thus, in one embodiment, a plurality of small electron beam column is provided array (in this example substantially horizontal array), in which case dimensional array 2 are prevented. E.g., 30, 40, 50, 60, 70, 80, 90, 100, 110, 120, 130, 140, 150 or 160 or more optical column is provided 1308. ball number 2 dimensional arrangement. In one embodiment, the number of optical column at least object (100) on fields or die number correspond to each other. The electron beam column parallel array of cross - allows inspection object, i.e., at least one of the electron beam column for inspecting a portion of an object simultaneously, at least one other of the other portions of the electron beam column object to inspect the substrate.

Each electron beam column includes a miniaturized substrate (e.g., 200 mm² Hereinafter, 170 mm² Hereinafter, 150 mm² Hereinafter, 120 mm² Hereinafter, 100 mm² Hereinafter, 80 mm² Hereinafter, 60 mm² Hereinafter, 10 mm² Or hereinafter). In addition, each electron beam column includes at least one electron beam number and at least one has a detector. In one embodiment, each electron beam column is effectively independent electron beam system are disclosed. As aforementioned, in one embodiment, each individual column object (100) consists of patterns that coincides on each field or die. (E.g., such as a semiconductor substrate of 300 mm diameter) of 100 die or fields, three individual electron beam column is provided which will be ball number 100, spaced apart plating film is 1 to 30 millimeters (spaced by several millimeters between the multiple beam inspection - single column multiple distinct beams).

In one embodiment, one or more electron beam column is pivotably moved relative to one or more other electron beam column. In one embodiment, each electron beam column are independently movable disclosed. In one embodiment, electron beam column is essentially orthogonal direction number 1 number 2 number 1 direction to and movable in the direction described. In one embodiment, an electron beam column including at least one electron beam group of columns includes one or more other column electron beam movable relative to disclosed. For example, row or a column of the electron beam column another aspect of each column or heat an electron beam column movable relative to disclosed.

The reference also 6, examples of embodiment for moving the electron beam column number encoded in actuator system. In the embodiment, an electron beam column includes a structure (610) being mounted on, additional electron column includes additional structure (610) mounted on the substrate. Actuator system actuator (620) has a structure (610) number 1 at least one of direction (640) then moves the other structure (610) structure of at least one (610) the location of substrate. In one embodiment, actuator (620) has a structure (610) (the electron beam columns (600)) pitch of a direction (640) is sprayed regularly structure (610) interval consists of uniformly to vary. In one embodiment, the change of the pitch, pitch structure (610) number 1 between uniform pitch from structure (610) uniform pitch between other number 2 is about to change. In one embodiment, actuator (620) has a structure (610) each adapted to move independently, structure (610) so that predominately all of possible arrangements of the interval between 1308. ball number. In one embodiment, actuator (620) also comprises a linear motor, piezoelectric actuator and/or comprises a belt system. In one embodiment, actuator (620) has a structure (610) maximum 6 degrees of freedom can be moving.

In one embodiment, the actuator system number 2 direction (630) (in an alternative embodiment one embodiment number 1 direction (640) essentially orthogonal to) to move the top ring consists of the electron beam column. The electron beam column (600) discharge direction (630) which moves actuator embodiment auditory canal 8 and 9 also refers to the be described example details are disclosed.

Figure 7 shows a 6 - column electron beam device also disclosed relating to multiple types of example embodiment and also of very coarse sensors mounted thereon are disclosed. In Figure 7 as can be ascertained, the electron beam column (600) object (100) extending across length/width of. The electron beam column (600) is also 7 and of Figure 8 structure (610) although there are illustrated extending from, the electron beam column (600) structure (610) can be integrated within (e.g., structure (610) is generally U-shaped electron beam column for receiving U-shaped disclosed).

Figure 8 shows a also the electron beam column (600) example embodiment of very coarse side are disclosed. The electron beam column electron optical system (800), processed with an electron beam device (810), selective sensor (820), actuator portion (840) and an optional actuator (860) without using a tool. Figure 9 shows a electron beam column (600) example embodiment of very coarse plane view or bottom view of Figure 8 are disclosed.

In one embodiment, electron beam optical system (800) is electron beam (805) for generating comprises electron beam source. In one embodiment, electron beam optical system (800) includes one or more optical elements for directing toward the object to focus electron beam having a predetermined wavelength ( not shown herein).

Electron beam processing equipment (810) is tea and/or back scattered electrons 2 from the object detector is configured to detect and, electron beam optical system (800) member and/or the backscatter electron to an object beam from 2 resulting from incident substrate. Thus, the electron beam column for inspecting a workpiece to act as electron supply and detector integration of specific region of 2000.

In one embodiment, processed with an electron beam equipment (810) is to cause beam, e.g. beam optical system configured to selectively comprises tilting/structure. Thus, in this case, the electron beam column is greater than the width of beam field. This optical system/structure within the field of view of the electron beam column, e.g. electron beam column by scanning the field of view of the beam (e.g., 1 - 30 nm to a spot size) can be moving. In one embodiment, optical system/electrostatic structure are disclosed. In one embodiment, processed with an electron beam equipment (810) and electron beam optical system (800) for projector/structure (when) is both may be static, i.e., before the electron beam on the object after emission and magnetic element is free for processing. This configuration provides a small electron beam column selectively fast deployment rack [syen nephrophathy. Alternatively, in another embodiment, in conjunction with static permanent magnet element is a compact column other embodiment example can be enabling.

In one embodiment, processed with an electron beam equipment (810) to electronic column number comprising the selected gear system. The system has an optical element electronic column number (800), beam, detector, actuator portion (840 and/or 850), and/or selective actuator (860) configured to cause selective movement of the optical system of number/ nephrophathy. In one embodiment, the electron beam column by expanding the individual number number microcolumn system then effectively independent electron beam testing enabling a central processing device and local data storage device without using a tool. In one embodiment, each electron beam column is equal to or approximately the same data path. The electron beam scanned over the top surface of each of the electron beam column object Image collected at the detector Image data as the electronic column number system is transmitted. Each individual column detection and processing in parallel in order to avoid the high data volume and velocity can be supporting the bottleneck.

In one embodiment, (actuator (620) of actuator system including a) actuator portion (840) an electron beam column (600) is number 2 direction (630) electron beam installed in a column direction to move the other electron beam column (600) can be the location of an. In one embodiment, actuator portion (840) an electron beam column (600) is attached structure (610) in or located over the actuator portion (850) cooperate with each other. In one embodiment, actuator portion (840) is coil or magnet can be actuator portion (850) cooperate to be a magnet or coil. In one embodiment, actuator portion (840, 850) and form the linear motor. In one embodiment, actuator portion (840), e.g. piezoelectric actuator only 1308. ball number. In one embodiment, the electron beam column (600) structure for moving (610) in or on the actuator portion (850), e.g. electromechanical motor or belt system encoded only ball number. In one embodiment, actuator portion (850) includes a plurality of electron beam columns (e.g., structure (610) length) or extending along each electron beam column (600) corresponding to structure (610) includes portions along. In one embodiment, actuator portion (840 and/or 850) direction (630) the multimedia (610) on the electron beam column (600) varying the pitch of the electron beam column (600) to vary uniformly intervals are prevented. In one embodiment, pitch of the electron beam column vertically moved (600) uniform pitch between the electron beam column from number 1 (600) number 2 between different uniform pitch is about to change. In one embodiment, actuator portion (840 and/or 850) an electron beam column (600) is configured to move independently, structure (610) along the electron beam column (600) so that predominately all of possible arrangements of the interval between 1308. ball number. In one embodiment, actuator portion (840 and/or 850) linear motor, piezoelectric actuator and/or comprises a belt system. In one embodiment, actuator portion (840 and/or 850) maximum 6 can be free moving an electron beam column.

Figure 14 shows a also the electron beam column (600) including an array of multi-column electron beam testing system of example embodiment very coarse representations, each electron beam column includes a object (100) on one die plate or field into the slide groove. Thus, in one embodiment, a plurality of small electron beam column is provided array (e.g. substantially horizontal array), in which case consists of 2 dimensional array. An array of electron beam column parallel cross allows inspection object, i.e., at least one of the electron beam column, the other of the at least one electron beam column for inspecting a portion of an object at the same time as other portions of the object inspection as follows.

In one embodiment, one or more electron beam column is pivotably moved relative to one or more other electron beam column. In one embodiment, electron beam column is essentially orthogonal direction number 1 number 2 number 1 direction to and movable in the direction described. In one embodiment, an electron beam column including at least one electron beam group of columns includes one or more other column electron beam movable relative to disclosed. For example, row or a column of the electron beam column another aspect of each column or heat an electron beam column movable relative to disclosed.

In this embodiment, field stroke positioning unit and end stroke positioning unit combination of each electron beam column number encoded on scan field in object to locate one ball. Field stroke for movement, upper or lower road coarse of Figure 14 as shown, 2 (e.g., X or Y) generally of a direction perpendicular to the electron beam column of grating etched into a cluster of independently moving ball number. Stage metal forming also a setting unit sets 15 in conjunction and after be described, comprises a module for each electron beam column 2 dimensional end stroke. Since conventional scanning field object on the number 100, e.g. X direction and Y direction of the electron beam column of grating 10x10 10 along of 1.0 to 10. 4 Along a Y direction of X direction of Figure 14 coarse examples of heat along heat 3 shown therein. In one embodiment, the grating includes a plurality of but in another of the plurality of structure essentially orthogonal, one embodiment form, orthogonal structures need not necessarily be disclosed.

The reference also 14, field stroke actuator system embodiment of column number encoded examples mobile electron hole. In the embodiment, a plurality of electron beam columns this structure (1300) mounted on, a plurality of the electron beam column are further additional structure (1300) such as pivotably mounted on properly. Actuator system actuator (1310) includes at least one structure (1300) direction a number 1 (1320) then moves the other structure (1300) structure of at least one (1300) the location of substrate. In one embodiment, actuator (1310) is direction (1320) the multimedia (1300) (the electron beam columns (600)) pitch of varying structure (1300) interval consists of uniformly to vary. In one embodiment, the change of the pitch pitch structure (1300) number 1 between uniform pitch from structure (1300) uniform pitch between other number 2 is about to change. In one embodiment, actuator (1310) includes structures (1300) number interval between substantially all possible arrangements of the ball so that it can be structures (1300) to move consists of each independent. In one embodiment, actuator (1310) includes structure (1300) to an maximum 6 degrees of freedom each or a combination thereof can be moving.

In the embodiment, a plurality of electron beam columns this structure (1330) mounted on, a plurality of the electron beam column are further additional structure (1330) such as pivotably mounted on properly. In one embodiment, structure (1330) electron beam columns mounted structure (1300) those mounted are disclosed. Actuator system actuator (1340) includes structure (1330) number 2 at least one of direction (1350) to move (in an alternative embodiment one embodiment number 1 direction (1320) essentially orthogonal to) other structures (1330) coupled with each other. In one embodiment, actuator (1340) is direction (1350) to structure (1330) (and the electron beam columns (600)) structure by modifying the pitch of (1330) interval consists of uniformly to vary. In one embodiment, the change of the pitch pitch structure (1330) number 1 between uniform pitch from structure (1330) uniform pitch between other number 2 is about to change. In one embodiment, actuator (1340) is structures (1330) number interval between substantially all possible arrangements of the ball so that it can be structures (1330) to move consists of each independent. In one embodiment, actuator (1340) includes structure (1330) to an each 6 degrees of freedom can be moving or a combination thereof.

In Figure 14 (and also shown in 15) structures (1330) is structures (1300) that overlaps the vehicle from the outside. Structures (1330) upper structures (1300) shown on but, TMDS no need to amplify. For example, structure (1300) includes a top structure (1330) implementation being. As another example, structure (1300 and 1330) has a structure (1300) portion of the adjacent structural (1330) to efficiently between (or vice versa) can be uploaded (interwoven). As another example, structure (1300) structure using one or more of the appropriate slots (1330) through the body (or vice versa) can be.

In one embodiment, actuator (1310) and/or actuator (1340) also comprises a linear motor, piezoelectric actuator and/or comprises a belt system. In one embodiment, actuator (1310) includes structure (1300) and/or a 6 degrees of freedom can move to an, actuator (1340) includes structure (1330) to an a 6 degree of freedom can be moving. In one embodiment, actuator (1310) and/or actuator (1340) is field stroke for movement e.g., maximum 200 mm/s (e.g., maximum 50 mm/s, maximum 100 mm/s, maximum 150 mm/s) 200 mm range (e.g., 50 mm maximum range, maximum 100 mm range, maximum 150 mm range) maximum at a number substrate. In one embodiment, actuator (1310) and/or actuator (1340) number in the range of 10 to 100 micro m is in a direction lateral accuracy substrate.

In one embodiment, one or more motors for moving stroke stroke movement and/field electric field and/or magnetic field corresponding to a step or way not (preferably electron beam column (600) electric field and/or magnetic field not affecting pollution by number in this case). In one embodiment, a step or a motor comprises a piezoelectric motor for movement stroke stroke movement and/field are disclosed. Piezoelectric motors that electric and/or magnetic field generally not sensitive to disclosed. In one embodiment, piezoelectric motors that electric and/or magnetic field does not essentially number. Piezoelectric motor (e.g., linear, work, such as hexagonal bolt piezo - motor) is a step or stroke movement range and/or rate each field stroke movement and/ number can be.

The reference also 15, in one embodiment, number 1 and number 2 direction (1320, 1350) individually field stroke movement, e.g. gear box types of structures may be achieved by applying. Figure 15 shows a also the electron beam column (600) intestinal stroke for moving double structure very coarse side as gear box type mechanism embodiment for example, the electron beam column (600) for example, structures (1300, 1330) can be positioned beneath the positioning unit stroke using field. Stage stroke actuator (1410) with structure (1400) (e.g., rod or pole) ball number is encoded. Stage stroke actuator (1410) is the electron beam column (600) attached thereto.

In one embodiment, stage stroke actuator (1410) is e.g., number 1 and number 2 direction (1320, 1350) the electron beam column including a maximum 6 freedom (600) fine movement of possible causes. In one embodiment, actuator (1410) also comprises a linear motor, piezoelectric actuator and/or comprises a belt system. In one embodiment, actuator (1410) is piezoelectric motor without using a tool. In one embodiment, actuator (1410) includes skin for movement stroke e.g. 20 mm range (e.g., 5 mm range, range 10 mm, 15 mm extent) can be a number. As can be recognized, actuator (1410) typically range of actuator (1310, 1340) less than the range of. In one embodiment, actuator (1410) is the electron beam column (600) with each other on the object to prevent disturbance into single scan field size dimensions.

Structure (1300) is number 1 direction (1320) (structure (1330) actuator (1340) direction by number 2 (1350) can be moved) the multimedia (1330) can be moving along, number 2 direction (1350) the multimedia (1300) can be move along (structure (1300) actuator (1310) (also 15 to not shown) direction by number 1 (1320) can be moved). In one embodiment, (attached the electron beam column (600) with) structure (1400) has a structure (1400) attached to bearing (1420) by structure (1330) guided to move along. In one embodiment, bearing (1420) structure (1330) of (as also shown in 15) guided by or outer surface. In one embodiment, the electron beam column attached (600) having a structure (1400) has a structure (1400) attached to bearing (1430) by structure (1300) guided to move along. In one embodiment, bearing (1430) structure (1300) of (as also shown in 15) guided by or outer surface. In one embodiment, actuator (1410) is in a direction lateral of each particular scan in fields 2 μm in stage stroke allows positioning accuracy.

In addition, brake (1440, 1450) is number 1 and number 2 direction (1320, 1350) the multimedia (1400) guide electron-beam column (600) to allow separate encoded number ball movement. In one embodiment, brake each actuator (1460, 1470) are operable to closed or open by. Brake (1440) are structured (1330) to be closed, structure (1400) and attached the electron beam column (600) structure (1330) secured on (the structure (1400) and attached the electron beam column (600) break (1440) is closed structure (1330) moved relative to and can, one embodiment embodiment brake (1440) is closed number 1 direction (1320) to activate the intestine cannot stroke movement). However, in Figure 15, brake (1440) is shown installed to the opening (1300) is number 1 direction (1320) when it is moved structure (1400) and attached the electron beam column (600) structure (1330) can be moving along. Structure (1400) and structure (1300) attached together on the electron beam column (600) direction a number 1 (1320) to enable movement of the, brake (1450) also 15 is closed as shown in structure (1400) and attached the electron beam column (600) this structure is (1300) secured on position. Structure (1400) and attached the electron beam column (600) this structure (1300) number 2 along direction (1350) for movement to, brake (1450) is opened and brake (1440) is closed structure is (1330) is actuator (1340) direction by number 2 (1350) will moved. The, structure (1300, 1330) in combination with movement of the actuator (1460, 1470) by brake (1440, 1450) by selective opening and closing, structure (1400) and attached the electron beam column (600) can be desired position. As can be recognized, are attached on the electron beam column (600) having a plurality of structure (1400) is number can be ball, each each brake set (1440, 1450) has. In one embodiment, a single actuator is brake (1440, 1450) both 1308. ball number. In one embodiment, brake (1440, 1450) is manually operated and with each other.

The reference also 16a, also as shown in 2 and 3 also, one or more electron beam column (600) overlap with one another in the fold structure (1300, 1330) stroke of grid including field 1406 (or at) can be disposed. Thus, in one embodiment, the electron beam column (600) both the lowest (or highest) structure (1300, 1330) positioned beneath the substrate. Examples of 16a also 2 and also in, each electron beam column (600) structure (1300) on structure (1330) cross center of partially lower (or on) to the lungs. The object to be recognized as, nested intersection intersects an imaginary position are disclosed. The lowermost structure is also 17a (1300, 1330) (or on top structure) and/or structural completely located below (1300) on structure (1330) located below the center of the intersection of partially (or on) the electron beam column (600) example exhibits.

The reference also 16b, protects the/Z direction or for added mechanical stability, one or more electron beam column (600) adjacent structure (1300) and/or adjacent structure (1330) can be arranged in front of, for example, as shown in 16b also, moves to a side of each intersection. Thus, in one embodiment, one or more electron beam column (600) structure (1300) and/or structural (1330) not below (or on). 17B is also adjacent structure (1300) and/or adjacent structure (1330) and/or structure to the side of the (1300) and/or structural (1330) not located below (or on) the electron beam column (600) example exhibits. Also 17b as shown in, the electron beam column (600) adjacent structures (1300/1330) can be at least partially positioned in the gap between the actuator (1410) and/or electron beam column (600) adjacent structure (1300/1330) above a lower surface of (or below a top surface of) to the lungs. In the embodiment, brake (1440) and/or brake (1450) is each structure (1300, 1330) side against the other. Thus, in the embodiment, structure (1400) is the electron beam column in the gap (600) can be bent to accommodate the position of. For example, structure (1400) has a structure (1300) may extend from the side faces of and (as also viewed 17b) structure (1330) extending from the side faces of can be. Also 16b and 17b with examples of embodiment (e.g., brake (1440, 1450) and structure (1300, 1330) using movement of) the electron beam column (600) to move the same principle as follows.

In one embodiment, one or more electron beam columns (600) and/or structures (1400) radiation source (e.g., laser) may for instance sensors and metrology module (1480) may have a, (e.g., related die or in fields to efficiently and/or an inspection) object scan fields to determine an accurate location, one or more of the neighboring electron columns (600) and/or structures (1400) by using predetermined material distance. Alternatively or additionally, metrology module (1480) an electron beam column (600) and field stroke of one or more structures (1300, 1330) measures a distance between an accurate scan field can be determining a position of the subject. Additionally or alternatively, metrology module (1480) (e.g., carry sensor (820) in the form of) one or more markers on an object using the individual die or field scan fields such as object in the electron beam column (600) can be measuring the position of the.

In one embodiment, in order to allow for fine positioning, structure (1300, 1330) number 1 has a relatively low resolution modes of a least one of the electron beam column (600) relatively large scan area, e.g. 1 μm² Exceeds 200 μm² Scanning through hereinafter to be disclosed. In one embodiment, the one or more techniques such as pattern recognition region of interest (e.g., deficiency region) can be used accurately localized. In number 2, plural column (600) for example structure (1300, 1330) and/or actuator (1410) to an inspection locations with high precision using, 0. 1 Μm² 2 Μm exceeds² Hereinafter such as regions of high resolution scan for a small area (including the region of interest preferably) and along the back. In one embodiment, in number 2, the electron beam column (600) will not result in the physically, or having to perform a scanning center only out of the object and a smaller region, the electron beam column (600) to a small area scanning and moves objects a plurality of hierarchies.

Thus, in one embodiment, the electron beam column two different directions for moving independently of e.g. gear box type in order to maintain the electron beam column on each scan field overlap structure including field (e.g., X and Y direction) encoded number ball stroke system. In one embodiment, exact positioning and/or electrical/piezo field stroke and end stroke motor is self-interference-free positioning for 1308. ball number. In one embodiment, stage stroke actuator and/or electron beam column field stroke structure can be positioned on the sides of the hole possibly encoded number.

Thus, the described actuator system in specification, the electron beam column can be made to different object size. In addition, the actuator system field or die of different size, fields or die of different pitch, fields or die different shapes such as field or die can be configured to different arrangement. Electron beam column is provided adjustments are made and to conform to different fields or die, the electron beam column X and/or Y only general pitch such as electron beam column each field or die position adjust to match.

Thus, in one embodiment, the plurality of beams comprises fields or die pitch/interval be an integer multiple of the pitch. Thus, in one embodiment, in order to make die or field size or variable spacing, the actuator system X and/or Y beam causes field at or die liquid device moves by a distance. In one embodiment, the electron beam column for at least column pitch of 2 times spaced to enable freedom of movement.

Examples of embodiment moveable structure (610) described by using but, the electron beam column (600) movement can be implemented in a different manner. For example, each of the X and Y direction established a generally planar electron beam column can be individually movable. For example, each electron beam column includes a planar motor similar coil and magnet of planar configuration that cooperates with the coil or magnet may have. In addition, the object can then be shown on the electron beam column of the drawings but, instead of the object can be located above the electron beam column.

In one embodiment, detected during a, the electron beam column are substantially stops in the nanometer range. The, inspection/X and/or Y to the electron beam column before field or die position identical with and adjusted, then electron beam column is detected during a substantially secured. Detected during a, located only moving objects by electron beam can be pre-installed in a column direction. Selectively, as discussed said to enable scanning of said electron beam while checking can be deflected.

In addition, in one embodiment, the 10 also reference, at least electron beam optical system (the electron beam column can be contains up to entire) actuator (860) (e.g., tilting or horizontal position) a location using a can be fine adjusted (1000, 1010). This adjustment is so that the entire object while processing a messenger object can be moved relative to the electron beam column, e.g. at least electron beam optical position object is transferred to the die or field new inspection region associated upper portion of the electron beam column can be changed during period located within a field of view. In one embodiment, adjustment is e.g. actuator (620) and/or actuator (840, 850) can occur from movement by electron beam column or electron beam position of optical system error account may be disclosed. In this case, in one embodiment, actuator (860) is e.g. direction (1010) moves the electron beam optics electron beam optical determines a desired curved shape disclosed. In one embodiment, adjustment is then described as describe misalignment with region suspected deficiency, e.g. direction (1000) can be made disclosed.

Similarly, the electron beam column (600) to the actuator (840, 850) a location using a factor can be adjusted (e.g., horizontal position or tilt) (1000, 1010). This adjustment is so that the entire object while processing a messenger object can be moved relative to the electron beam column. For example, the electron beam column position the electron beam column associated individual die or field new inspection region to place the object within a field of view can be changed during period during migration. In one embodiment, adjustment is, e.g. actuator (620) and/or actuator (840, 850) can occur from movement by the electron beam column position error can be described. In this case, in one embodiment, actuator (840, 850) is e.g. direction (1010) moves the electron beam column electron beam column (and electron beam optical element) determines a desired curved shape disclosed. In one embodiment, adjustment is then described as describe misalignment with region suspected deficiency, e.g. direction (1000) can be made disclosed.

As the aforementioned sensor data and/or measurement data of pattern features which carry the adjustment is - located in corresponding object in the field where die or whether help positioning alignment, overlay and mask as - can be based on registration data, i.e. object feature pattern on the arm can be computationally predicting.

In one embodiment, the electron beam column is optionally electron beam optical system (800) and/or electron beam processing equipment (810) generate a light beam (860) without using a tool. Actuator (860) actuator portion (840 and/or 850) number by which ball movement enabling fine movement compared can be relatively coarse. In one embodiment, actuator (860) also comprises a linear motor and/or piezoelectric actuator having a predetermined wavelength. In one embodiment, actuator (860) is electron beam optical system (800) and/or electron beam processing equipment (810) maximum 6 can be free moving.

In one embodiment, sensor (820) for the user to determine the location of the electron beam column is radiation (830) a number (e.g., optical) substrate. For example, sensor (820) is the electron beam column can be electron beam column object/object from a range or tilt can be determine. Additionally or alternatively, in one embodiment, sensor (820) electron beam column at a location on the object is the object to determine the location of an alignment mark on a target or other relative movement between the measuring body. This information is the electron beam column (e.g., actuator portion (840 and/or 850)) and/or electron beam optical system (e.g., actuator (860)) electron beam column and/or electron beam optical system each ball to move actuator system number and position magnets easily the number, and/or beam to move the processed with an electron beam device (810) for projector/structure easily the position of an electron beam to a number equal to number ball magnets.

By reducing the size of pixels smaller view, enabling detection of but smaller pattern (excursions), C. more accurate alignment. The column is provided in mecca [thu nick [su or sensor via the precision well aligned smaller view can be achieved using higher resolution and a high inspection speed.

In addition, in one embodiment, the aforementioned field as die or a plurality of electron beam column combination is calculated with parallel inspection synergy prediction deficiency ball number, less than to test each die or field increase of throughput, accuracy and/or efficiency can be increased. For example, certain inspection deficiency prediction is calculated size of single - or multiple - - 2 - 3 order beam electron beam testing device in comparison with the object on beam electron beam testing device when used in the identification of potential deficiency features that are much faster inspection can be number. For example, single - beam includes at least one of electron beam device comprises a die or field used can take a long time and significant, all die or field as well as object, a fine pattern features member is positioned many time-consuming other. In addition, multiple - beam electron beam device includes a plurality of beam over a relatively large, have combination view are disclosed. However deficiency is likely to occur at a region (-0. 5 - 3 Μm² ) Is, 10,000 μm² (E.g. 10x10 beam array) number and combination of view , single beam (-100 μm² ) Already than smaller than field-of-view. Thus, only one or two or three coupled within a field of view of expected deficiency can then, in the multiple - beam electron beam inspection device is not significantly accelerate deficiency are disclosed.

For example, throughput improvements to, the plurality of deficiency (e.g., on a semiconductor wafer) the systematic deficiency in each die or field prediction pattern dependent and therefore will not calculated (and number of semiconductor wafer edge ) will identify the same or similar locations in the possibility that the deficiency in an argument is high due can be achieved. The, die or field pre-aligned columns the electron beam, the electron beam column between a group of single the relative movement, both, most, or plural column within a field of view with each deficiency areas and the elimination of one or more predicted, the shape of parallel nephrophathy. I.e., electron beam column is detected during and inspection between essentially remains stationary so that it can be with respect to each other, and relative movement between the electron beam column is composed of an aggregate of object, one or more potential deficiency with each die or field in each region of each electron beam impact point can be parallel positioning of a substrate. In this way, an area where potentially deficiency electron beams quickly can be arranged in parallel. In addition, each die or field of a metal cathode ray tube smaller than needs to be inspected, this significant speed and processing to achieve by increasing amount of are disclosed.

Thus, in one embodiment, at least one column with an electron beam column 2 dimensional array object die or field per number is ball, has a potential of at least one deficiency of one or more for each die or in fields to identify a region of each die or field is based on increase of examining other. In one embodiment, the one or more deficiency, e.g., by simulation in the computationally predicted substrate. In one embodiment, the electron beam column with at least X and/or Y die or field alignment can adjust the pitch of the direction.

As aforementioned, in one embodiment, the entire die or field test object is not. In one embodiment, a majority of die or field test object is not. In one embodiment, patterned portion of the test object is not. In one embodiment, the area having a potential deficiency can be referred hot spot (hotspot). A substrate having one or more region of deficiency in hot spot tends to region including features are disclosed. Thus, in one embodiment, a system for inspecting a hot spot can be inspecting individual die or in the field. In one embodiment, square or hereinafter hot spot area is 2 microns (e.g., 1. 41X1. 41 Microns, 1x1 microns or 0. 77X0. 77 Microns) by using predetermined material. Die may have a plurality of hot spots or field region. Many cases, die or in fields (discrete) discrete hot spot region will disclosed. In one embodiment, a plurality of hot spots or connected to one another adjacent region is superimposed hot spot region can be adjacent group. The object inspection throughput (-100 times) the electron beam hot spot inspection only about two size order can be increased disclosed.

In one embodiment, predicted deficiency region (e.g., hot spot) pattern (e.g., patterning device pattern or for the same pattern) from using any suitable method can be identified. For example, the area of an empirical model or predicted deficiency using the computational model by analyzing at least a portion of a pattern can be identified. An empirical in the model, an Image of a pattern (e.g., resist Image, optical Image, etching Image) is not simulated; instead an empirical model is processing parameter, the correlation between deficiency or deficiency of parameter and deficiency based on probability prediction as follows. For example, an empirical model is classification model (classification model) or deficiency of which tend to be pattern database implementation being. In computational model, printed portions of the pattern or characteristics are calculated or simulated, the portions or characteristic deficiency identified based substrate. For example, the second width line (line pull back) deficiency in a desired position can be locate and identify's too far from line end; two line undesirably coupled position found by bridging deficiency can be identified; 2 deficiency of features are overlapped or undesirably separate layer on overlapping or non-overlapping undesirably found can be identified by. In another example, the area of predicted deficiency focus exposure matrix substrate qualification or suitable metrology tool clasp can be determined.

In one embodiment, a design rule checking including one or more predicted deficiency determined based on one or more areas. Design rule specified minimum distance between two features, etc. can be of the smallest dimension features comprising. The, whether the printing pattern is consistent with design rule can be, along portions of the pattern are identified design rule violation or not can be (and a substrate by patterning of the empirically tested). These portions are care (care) region can be taken into account, this undulation (excursion) process a higher sensitivity (the deficiency having higher possibilities) area of pattern (die) are disclosed.

In one embodiment, including a at least one region of the at least one predicted deficiency, mathematical model determined based on one or more a patterning process nominal conditions (overall pattern (full chip) to a door number pattern feature library of viscoelastic materials present). Even under conditions of poor printing nominal (and the higher the possibility deficiency) part of pattern (or pattern features) can be identified. These portions are care pattern can be considered.

In one embodiment, including a at least one region of the at least one predicted deficiency, pattern data from design data and a patterning process using a patterning process using at least one mathematical model determined by simulation. For example, 13 also in relation to the described process, each field or die determine their positions as well as the presence of can be used to derive predicted deficiency region. In one embodiment, 13 in deflection process simulation process described also in conjunction with higher sensitivity (the deficiency having higher probability) for identifying patterns having different from nominal conditions (hot spots) in deflection can be performed. Optionally, one or more exposure pattern simulation is performed determines whether the PCB or measured data from a substrate can be further enhanced. For example, one or more substrates focus map is measured die or field (or a portion thereof) to identify horizontal members, focus based on a map having di - or field installation exceeds a threshold value (or a portion thereof) is to be tested only focus 2000; however this, because not all over the field or a sensitive area of all inspection to determine the low capture rate.

In one embodiment, hot spots can be identified by evaluating the process window of features in the pattern region. The process window for a feature of pattern on a substrate features within specification (e.g., dose and focus) in the resultant treated parameter space are disclosed. Examples of potential deficiency associated with pattern specifications necking, second width line, line , CD, edge disposed, overlapping, resist loss, resist undercut and bridging etc.. Than different process window may have various features. All features combined process window in the region of the region merging process window (e.g., overlapping) the individual features can be obtained by. All features of the feature part process window comprising a border of the boundary of a process window. I.e., such separate feature can be a relevant area all features combined process window number valve timing of the other. This feature can be "hot spots" can be referred. The inspection of regions when assessing process window coupled in a specific region which do not belong to hotspot shaped pattern capable of concentrating mirror number been disclosed. Printed on the substrate region there is no no deficiency hotspot deficiency will that all features installed in the region of interest. The hot spot based on hot spot position and individual process window, the hot spot temperature process window map determining and/can be compiled, i.e., decides the process window as a function of position. The process window map is specific of the inspection can be sensitivity and treatment margin can characterize. In one embodiment, ASML Tachyon FEM model software can be used to identify a hot spot.

In one embodiment, die or one or more care area per field, care pattern or only the specification described multiple electron column employing hot spot device are disclosed. In one embodiment, care area, care pattern or hot spots less than the field of view of the electron beam column (field of view). In one embodiment, care area, care pattern or hot spots 0. 05 - 10 Micro m2, 0. 1 - 5 Micro m2 or 0. 5 - 2 Micro m2 zone and a.

Also 11a, 11b and 11c by referring to, brightness field inspection techniques for examples of embodiment care region (1100) very coarse using shown in the nanometer range. In also 11a, care region (1100) object (100) each field of or die (120) determined for. Care region (1100) can be determined as described above. Then, the reference also 11b, brightness field testing is used to inspect the uppermost zone care suspected deficiency (410) to identify other. Care region is generally an object field beam brightness relative movement between the movement all care region examined number is checked other. Field check deficiency is too small since brightness thresholds can be suspected deficiency (410) identifies whether the seal number deficiency cannot disclosed. Electron beam deficiency review is then suspected deficiency (410) to identify whether any of the seal number deficiency selectively deficiency (e.g., CD value number ball) characterize 11c also carried out in order. As shown in this example, is less than the number of thread number deficiency of suspected deficiency also 11b 11c also. You will, this process can be e.g. take long to do something.

The reference also 12a and 12b also, an electron beam column using electron beam testing of very coarse and predicted a hot spot and practical examples of embodiment shown in the nanometer range. In 12a also, object (100) on each field or die (120) for at least one of hot spots (410) determined these techniques. Typically, a plurality of hot spots will present per or die per field. In addition, as shown in 12a also, many hot spots in each field or die can be the same or similar position. In one embodiment, each identified hot spot position is additionally margin, required only the certain hot spot this predicted deficiency is installed to each electron beam can be guaranteed. In addition, a hot spot is a substrate process for identifying number threshold value, which is lower than design so that the deficiency thereof can. This hot spot is evaluated to ensure even higher integrity "boundary (marginal)" help other. For example, capture speed appropriate to balance at risk of incorrect simulation by, in one embodiment, the hot spot temperature is predicted having the identified field brightness than would otherwise suspected deficiency are disclosed.

In addition, as shown in 12a also, the electron beam column per field or die (600) field-of-view (500) is shown disclosed. In this example, the viewing field (500) are aligned with a region having one or more of hot spots. These view (500) is not aligned with at least one region having one or more of hot spots, "productive" is a process oriented these does not proceed number and can be, all or the majority of cannot be tested by electron beam inspection is required to cover the additional regions will. In one embodiment, also 10 as described in connection with one or more of hot spots not aligned with a region having one or more field-of-view (500) stage can be accomplished.

Then, electron beam columns 12a and 12b also object to perform electron beam testing method capable of performing a relative motion of the respective viewing all hot spot area can be a check is conducted to ALIGN and electron beam. Subsequently or simultaneously, hot spot and optionally identify whether a deficiency is the result of the electron beam for characterizing deficiency (e.g., CD value number ball) to evaluation with each other. As shown in this example, is less than the number of thread number deficiency also 12b also 12a of hot spots.

12A and 12b hotspot is also described but, the same process of care and/or care pattern can be used. However, care and/or care pattern is greater than a hot spot area and, thus, although the process of the relative to the column thereof using electron also 11a a-c in throughput will be increased while testing, inspection can be added more time.

Thus, the described techniques may provide process having a plurality of lamp specification and predicted deficiency calculated region (e.g., care area or care pattern) including brightness field using brightness field inspection can be replace. To enable high throughput, the hot spot temperature so that the estimated total brightness field predicted total care than the degree thereof can small - 2 - 3 order. In addition, a plurality of electron beam column is configured to measure in parallel, as shown in single electron beam deficiency review is also 11c identifying number deficiency chamber than all predicted a hot spot inspection can quickly order degree - 1 - 2. 30, 40, 60, 70, 80, 90, 100, 110 Or more electron beam column is such speed to enhance will.

The result of the checking can be used in various ways. For example, hot spot pattern feature can be identified deficiency associated with, for example, wetting ability in design process and can be modified or number, or the like can be compensated to process parameter affected by the change. No deficiency model be used a hot spot identified factors. The hot spot temperature contour (independent of whether the negative base) using calibration model can be disclosed. I.e., model generated by the measured contour are detected and control can be the updated model can be compared.

Are discussed e.g. a semiconductor partially in inspection of most prior focusing but, in device and method herein can be applied to a substrate (e.g., mask or reticle). I.e. the inspected object is patterned device can be. Thus, the number of the electron beam column can be appropriately selected.

In one embodiment, the patterning device is the electron beam column electronic derived from the parameter detected by the corrected substrate. In one embodiment, patterning device itself or a patterning device similar version or copied object under this compensation can be provided when the combustion chamber. In one embodiment, correction is transferred onto the object substrate (e.g., semiconductor substrate) test pattern when the combustion chamber.

In one embodiment, patterning device repair device and method described herein or alternatively additional nephrophathy. I.e., in one embodiment, a plurality of die or field in parallel around the multiple electron column device is encoded ball number. The electron beam column number by which the electron beam can be enabling repair ball (and optionally the specification as described can be used for detection). In one embodiment, the electron beam patterning device number of the substance from the every other nephrophathy. Measurement module is electron beam column is provided, can be adjusted between electron beam power is measuring and repair. In one embodiment, enable repair for, material electron beam adapted to interact with ball number can be disclosed. In one embodiment, outlet (700) precursor fluid (e.g., gas) is supplied to each ball number encoded. Fluid is electron beam can be used in combination with the deposition of material when possible. In one embodiment, the repair device to enable the electron beam column for spraying instead or together in combination are used. In one embodiment, the metal ions to number consists of spraying device. Patterning device for repair of detail, e.g., can be found in U.S. patent application Official Gazette number 2004 - 0151991 call call and U.S. patent number 7,916,930, these patent herein with reference to a citation integrated with each other.

In addition, the electron beam column but the processing using said description is mainly focusing, electron beam column is different inspection device device and method described herein can be used. I.e., each of the plurality of the electron beam column can be replaced by different inspection device or different inspection device can be supplemented. In addition to the inspection device type of difference, different inspection device for receiving device and method described herein and is basically the same modified a number will.

In one embodiment, the electron beam testing device including a plurality of dies or field is number ball and of examining objects, said device includes: a plurality of the electron beam column electron beam scattered from said object and each electron beam column includes a number - 2 or an electron and configured to detect, said electron beam column associated with said each electron beam column is different each field or die is configured to -; and a machine-readable computer program product including instructions non - - said at least some of the temporary number instructions, said electron beam and each field or die each increase in the area of the electron beam column to said good small each field or die are configured to cause relative movement between said object comprises a -.

In one embodiment, said region comprising at least one of the identified hot spot. In one embodiment, the hot spot temperature to determine the presence and/or positioning said consists of said at least some of the instructions. In one embodiment, at least some of the hot spot consists of said instructions to identify said by simulation. In one embodiment, said 2 dimensional electron column is made up of an array of at least 30 by means of the electron beam column. In one embodiment, one or more electron beam column configured to move another one or more electron beam column further comprises an actuator system. In one embodiment, said at least some of the plural instructions simultaneously impinge each field or die so consists of each zone.

In one embodiment, electron beam testing device is ball number is, said device includes: a plurality of the electron beam column electron beam from an electron scattering or 2 - each electron beam column includes a number object and configured to detect and, said electron beam column associated with said each electron beam column is different each field or die are configured to good -; and electron beam column is moved relative to the other at least one of configured to actuator system comprises one or more electron beam column.

In one embodiment, the electron beam column consists of a plurality of said pitch of said actuator system to change the fix. In one embodiment, the 2 dimensional array consisting of a plurality of said electron beam columns, said direction and said number 1 number 1 position of the electron beam column the actuator system to vary the direction and substantially orthogonal direction consists of number 2. In one embodiment, each electron beam column electron beam column etc. movable independently of the other. In one embodiment, the electron beam column comprises a plurality of said at least 30 of the electron beam column. In one embodiment, each said electron beam, each field or die each field or die to increase of good object configured to cause relative movement between the electron beam column including a machine-readable computer program number article further comprises temporary non - command. In one embodiment, said region comprising at least one of the identified hot spot. In one embodiment, configured to determine the presence and/or positioning said hot spots including machine-readable instructions comprises temporary non - computer program number article. In one embodiment, machine-readable instructions configured to identify said by simulation in the hot spot number comprises temporary non - including computer program product.

In one embodiment, the number of electron beam testing method and including a plurality of dies or field object ball, the method: each electron beam column includes a number said electron beam and having a plurality of electron beam column step - 2 or scattered from object and configured to detect an electron, the electron beam column said associated with said each electron beam column is different each field or die is configured to -; increase of each field or die each electron beam to good small each field or die, causing relative movement between said objects and said electron beam column step; said object on said electron beam from the electron beam said number; and said electron beam column number 2 or scattered from said object using an electron detecting comprising the following steps.

In one embodiment, said region comprising at least one of the identified hot spot. In one embodiment, the hot spot temperature said computer further comprises determining the presence and/or positioning. In one embodiment, computer simulation by said further comprises identifying a hot spot. In one embodiment, said 2 dimensional electron column is made up of an array of at least 30 by means of the electron beam column. In one embodiment, another one or more of the one or more electron beam column using actuators moving further comprises electron beam column. In one embodiment, said object comprising a substrate or semiconductor wafers. In one embodiment, object based on parameters detected from said electronic derived from, said objects or patterning device further comprises repairing step.

In one embodiment, electron beam testing method is the number ball, the method: each electron beam column includes a number said electron beam and having a plurality of electron beam column step - 2 or scattered from object and configured to detect an electron, the electron beam column said object associated with said each electron beam column is different each field or die are configured to good -; and actuator system using one or more electron beam column moved relative to the other one or more electron beam column comprising the following steps.

In one embodiment, changing the pitch of said plurality of electron beam column comprising the following steps. In one embodiment, is made up of a plurality of said electron beam column includes a 2 dimensional array, direction and number 1 number 2 to change a position of the electron beam column direction supporting said number 1 is a molded substrate. In one embodiment, each electron beam column electron beam column etc. movable independently of the other. In one embodiment, the electron beam column comprises a plurality of said at least 30 of the electron beam column. In one embodiment, each electron beam increase of each field or die each field or die to said objects and said good step further comprises causing relative movement between the electron beam column. In one embodiment, said region comprising at least one of the identified hot spot. In one embodiment, the hot spot temperature said computer further comprises determining the presence and/or positioning. In one embodiment, by computer simulation further comprises identifying a hot spot. In one embodiment, said object comprising a substrate or semiconductor wafers. In one embodiment, object based on said detected from electronic derived from parameters, said objects or patterning device further comprises repairing step.

In one embodiment, electron beam testing device is number ball and, said device includes: a plurality of the electron beam column - said electron beam and the electron beam column number scattered from each object are configured to detect an electron or 2 -; and at least one electron beam column one or more electron beam column is moved relative to the other actuator system configured to at least partially overlapping with a plurality of number 1 number 2 - said actuator system includes a plurality of moveable structure and movable structures, said number 1 and number 2 - by said movable structures comprise a plurality of electron beam column.

In one embodiment, one or more of the moveable structure said number 1 moveable structure movable relative to the other of said number 1 and one or more, and/or one or more of the moveable structure said number 2 pivotably moved relative to the other of the at least one moveable structure said number 2. In one embodiment, said one of the electron beam column number 2 number 1 component and connected to the column structure having components, said number 1 components may be physically combined with one of the moveable structure movably said number 1 said number 2 components may be physically bind with one of the moveable structure movably said number 2. In one embodiment, moveable structure located within said number 1 said number 1 components, and/or said number 2 component moveable structure in said number 2 to the yarns. In one embodiment, moveable structure located at a fixed position with respect to said number 1 for maintaining said column structure moveable structure configured to couple with said number 1 to number 1 brake and/or said number 2 is located at a fixed position with respect to said moveable structure moveable structure configured to couple with a column structure in order to maintain the brake further comprises said number 2 number 2. In one embodiment, brake and said number 2 and brake said number 1, said number 2 in combination brake while said movable structure into a number of column structure said number 2 said number 1 brake configured to move said number 1 and number said electron beam column combination brake while said number 2 is said column structure of said electron beam column into a brake configured to move the moveable structure said number 1 number further comprises gear system. In one embodiment, one or more electron beam column number 1 or number 2 number 1 and adjacent movable structure and/adjacent the lateral movable between and/or adjacent number 2 moveable structure moveable structure are located between the substrate. In one embodiment, said at least one of the electron beam column said number 1 and number 2 having a short stroke actuator is less than a moving range of movement of moveable structure coupled with each other. In one embodiment, further includes a plurality of sensors, each associated with an associated adjacent the electron beam column to measure distance to determine the location of the electron beam column consists of. In one embodiment, the electron beam column object associated with each electron beam column is different each field or die to consists of good. In one embodiment, temporary computer program further comprises machine-readable instructions including non - number article, said at least some of the commands, said electron beam and each field or die each increase in the area of the electron beam column to said good small each field or die to cause relative movement between said object consists of.

In one embodiment, electron beam testing method is the number ball, the method: - said electron beam and the electron beam column having a plurality of electron beam column each step number are configured to detect light scattered from the object or 2 - electron ; actuator system using one or more electron beam column is moved relative to the other one or more electron beam column - said actuator system includes a plurality of at least partially overlapping the moveable structure with a plurality of number 1 and number 2 movable structures, said number 1 and number 2 - electron movable structures by said column; said object on said electron beam from the electron beam column said number; and said electron beam column using an electron or scattered from said object detecting number 2 comprising the following steps.

In one embodiment, one or more of the moveable structure said number 1 moveable structure movable relative to the other of said number 1 and one or more, and/or one or more of the moveable structure said number 2 pivotably moved relative to the other of the at least one moveable structure said number 2. In one embodiment, said one of the electron beam column number 2 number 1 component and connected to the column structure having components, said number 1 physically coupling said number 1 while moving component and moveable structure with one of the moveable structure with one of the number 2 while shifting the components further comprises physically coupling said number 2. In one embodiment, moveable structure located within said number 1 said number 1 components, and/or said number 2 component moveable structure in said number 2 to the yarns. In one embodiment, moveable structure located at a fixed position with respect to said number 1 for maintaining said column structure movable structure to said number 1 and/or said number 2 number 1 order to brake said column structure located at a fixed position with respect to a moveable structure in order to maintain the movable structure further comprises bonding the substrate to the brake and said number 2 number 2. In one embodiment, brake while said number 1 into a movable structure in combination said number 2 number of said column structure moving said brake said number 2 the electron beam column, said number 1 in combination brake while said number 2 into a number of column structure to move said movable structure is said brake said number 1 electron beam column comprising the following steps. In one embodiment, one or more electron beam column number 1 or number 2 number 1 and adjacent movable structure and/adjacent the lateral movable between and/or adjacent number 2 moveable structure moveable structure are located between the substrate. In one embodiment, the electron beam column said number 1 and number 2 is less than at least one of the extent of movement of said moveable structure having a short stroke actuator moving range mobile reaction chamber. In one embodiment, further includes a plurality of sensors, each associated with an associated adjacent the electron beam column to determine the location of the electron beam column distance by using predetermined material. In one embodiment, the electron beam column object associated with each electron beam column is different each field or die to consists of good. In one embodiment, each electron beam increase of each field or die each field or die to said objects and said good step further comprises causing relative movement between the electron beam column. In one embodiment, said object comprising a substrate or semiconductor wafers. In one embodiment, object based on said detected from electronic derived from parameters, said objects or patterning device further comprises repairing step.

In one embodiment, the repair device is ball number patterning device, said device includes: a plurality of beam column - number configured to each beam column includes a radiation beam, said beam column associated with each radiation beam so that each radiation beam using said patterning device are configured to repair an area of - different each field or die; and at least one other beam column configured to move relative to the at least one beam column comprises an actuator system.

In one embodiment, said beam columns from each said patterning device further configured to detect scattered or 2 consists of an electron. In one embodiment, each beam column includes said beam column associated with said different each field or die to consists of good. In one embodiment, each electron beam to said beam columns consists of number. In one embodiment, each beam column includes a number to consists of said ion beam.

Such as SEM imaging device in conjunction, one embodiment example includes the specification of machine-readable instructions enabling embodiment described method including a sequence of one or more can be computer program. Such a computer program, e.g. of Figure 3 imaging device and/or of Figure 2 number (LACU) with or within the with the unit can be contained therein. In addition, such computer program stored in a data storage medium (e.g., semiconductor memory, magnetic or optical disk) is 1308. ball number. E.g. 1 such as shown in map 3 even if production and/or when another master uses the already existing type device, causes the device to perform an update processor specification described method can be implemented in a computer program number article number.

The previous disclosure of the present invention embodiment example the machine - readable instructions for implementing a method as defined sequence of 1 or more including computer program, or a computer program stored in a data storage medium (e.g., semiconductor memory, magnetic or optical disk) can take the form of a. In addition, one or more computer programs can be implemented in machine readable instructions 2. 2 Or more computer program can be one or more different memory and/or data storage medium.

The specification of one or more violations of the lithographic device any number a computer program at least one component located within one or more computer processor or a combination thereof can be read by operation respectively. Violations of the number of receiving a signal, processing and for transmitting each may have any suitable configuration alone or in combination. At least one processor to communicate [e roof tile consists of at least one number. For example, each number law comprises the above-described method including machine-readable instructions for one or more processors for executing computer programs can be. Such violations of the number data storage media and/or such media for storing a computer program for receiving hardware can be. The number of violations of the one or more machine-readable executable instructions of a computer program operating in accordance with a (are) can be.

Or more, with respect to optical lithography of the present invention embodiment examples mentioned but the specific use for example, the present invention refers to examples other applications, for example imprint lithography can be used, the specification will understand that if not one number to generate optical lithography. In imprint lithography, the topography of the substrate pattern produced on the patterning device (topography) in defining substrate. The topography of the patterning device electromagnetic radiation, heat, pressure or a combination thereof resist is cured by applying supplying resist layer can be pressed. The patterning device is resist is cured after resist leaving a pattern therein are confirmed each other..

Further, in the specification, but the specific use example lithography device IC number in possession of the bath, the specification described lithographic device and a repeller optical system, guiding and detection patterns domain memory, flat panel display (flat-a panel display), liquid crystal display (LCD), thin film magnetic head or the like number of examples which can be have other applications such as tub understand accomplishing. One skilled if, with respect to such alternative applications, a "wafer" or "die" specification of the term "substrate" or "target portion" will come under any use are also as general terms may be taken as the synonym will understand. The substrates moving to pipeline specification, e.g. track (typically, a resist layer is applied tool substrate exposed resist is developed), can be treated in a metrology tool and/or inspection tool. If applicable, other substrate processing tool the specification disclosure of such substrate processing tool can be applied. In addition, e.g. to produce multilayer IC can be processed more than once is to hold, the substrate used for the specification that the term has put in treated layers called substrate disapproval.

The term "radiation" and "beam" used in the specification that the particle beam such as ion beams or with electron beams as well as, (e.g., 365, 248, 193, 157 or 126 nm, or extent thereof with a wavelength) ultraviolet (UV) radiation and (e.g., having a wavelength in the range of 5 to 20 nm) for all types of electromagnetic radiation including extreme (EUV) radiation to the P19.

The specification that the term "lens" is allowed, refractive, reflective, magnetic, electromagnetic and electrostatic optical components including various forms of optical components at any one or combination can be referred.

The term "optimization" and "optimization" is used in specification, patterning results and/or patterning process, a higher precision of the transfer layout design on a substrate, such as patterning process device in accordance with more preferably larger process window, the value of the at least one step of patterning process lapse of or big. Thus, the term "optimizing" and "optimization" used in the specification, for one or more parameters of one or more values for comparing with initial set, in at least one associated metric such as one or more parameters of one or more local optima number improving process or refer to values of identification means. ". ". ". "". "Optimal" and other related term should be interpreted accordingly. In one embodiment, the step of at least one metric in a number optimum can be iteratively applied for further enhancements.

The present invention refers to can be further described using the following items:

1. In the electron beam testing device including a plurality of dies or field of examining objects,

Each electron beam column is electron beam scattered from said object and a plurality of electron beam column - number and configured to detect an electron or 2, said electron beam column associated with said each electron beam column is different each field or die is configured to -; and

Machine-readable instructions including instructions at least some of the temporary computer program number non - - said article, each said electron beam and each field or die to said increase in the area of the electron beam column good small each field or die are configured to cause relative movement between said object -

A including electron beam testing device.

2. According to Claim 1, said regions including device at least one of the identified hot spot.

3. According to Claim 2, said instructions configured to determine said at least some of the hot spot of the presence and/or positioning the device.

4. According to Claim 2 or Claim 3, said instructions said by simulation device configured to identify the at least some of the hot spot.

5. According to one of Claim 1 to Claim 4, said at least 30 2 dimensional electron column is made up of an array of electron beam column including device.

6. According to one of Claim 1 to Claim 5, another one or more electron beam installed in a column configured to move one or more electron beam column actuator including device sensors.

7. According to one of Claim 1 to Claim 6, said at least some of the plural instructions simultaneously colliding device configured to each zone of each field or die.

8. In electron beam device,

An electron beam column 2 - electron beam scattered from each electron beam column includes a number object and configured to detect and or an electron, the electron beam column said associated with said each electron beam column is different each field or die are configured to good -; and

The electron beam column is moved relative to the other one or more of one or more electron beam column configured to actuator system

A including electron beam testing device.

9. According to Claim 8, said device adapted to alter the pitch of the plurality of the electron beam column said actuator system.

10. According to Claim 8 or Claim 9, said 2 dimensional array consisting of a plurality of electron beam columns, said actuator system and substantially orthogonal direction and said number 1 number 1 position of the electron beam column direction device configured to vary the number 2.

11. According to one of Claim 8 to Claim 10, each electron beam column includes a device movable independently of other electron beam column.

12. According to one of Claim 8 to Claim 11, said electron beam column including device of electron column is at least 30.

13. According to one of Claim 8 to Claim 12, each said electron beam, each field or die each field or die to increase of good object configured to cause relative movement between the electron beam column including machine-readable instructions further including device non - temporary computer program number article.

14. According to one of Claim 8 to Claim 13, said at least one of the identified hot spot regions including device.

15. According to Claim 14, said machine-readable instructions configured to determine the presence and/or positioning the hot spot temperature non - including temporary computer program number articles including device.

16. According to Claim 14 or Claim 15, by simulation in the machine-readable instructions configured to identify said hot spot including non - temporary computer program number articles including device.

17. Object electron beam testing method as including a plurality of dies or field,

A plurality of the electron beam column electron beam scattered from said object and having steps each electron beam column includes a number - 2 is configured to detect or an electron, the electron beam column said associated with said each electron beam column is different each field or die is configured to -;

Each field or die each electron beam each field or die to increase of good, the electron beam column relative movement between said objects and said causing step;

the object on said electron beam from said electron beam number; and

The electron beam column number 2 or scattered from said object using said detecting electron

A including method.

18. According to Claim 17, said at least one of the identified hot spot regions including method.

19. According to Claim 18, said computer further including method determining the presence and/or positioning the hot spot.

20. According to Claim 18 or Claim 19, computer simulation by said further including method identifying a hot spot.

21. According to one of Claim 17 to Claim 20, said 2 dimensional electron column is made up of an array of electron beam column including method and at least 30.

22. According to one of Claim 17 to Claim 21, one or more electron beam column using actuators further including method one or more electron beam column is moved relative to the other.

23. According to one of Claim 17 to Claim 22, said object including method a substrate or semiconductor wafers.

24. According to one of Claim 17 to Claim 23, based on parameters detected from said electronic derived from object, said objects or patterning device further including method to the gate lines.

25. Electron beam testing method as,

A plurality of the electron beam column electron beam scattered from said object and having steps each electron beam column includes a number - 2 is configured to detect or an electron, the electron beam column associated with each electron beam column includes said region of said object is configured to - different each field or die; and

Actuator system using one or more electron beam column in conjunction with one or more other moving the electron beam column

A including method.

26. According to Claim 25, changing the pitch of said plurality of electron beam column including method.

27. According to Claim 25 or Claim 26, said dimensional array consisting of a plurality of electron beam column is 2, the number 1 and substantially orthogonal direction direction direction and said number 1 number 2 the method to change a position of the electron beam column.

28. According to one of Claim 25 to Claim 27, each electron beam column is movable independently of other electron beam column method.

29. According to one of Claim 25 to Claim 28, said electron beam column including method of electron column is at least 30.

30. According to one of Claim 25 to Claim 28, each field or die each electron beam to said increase of said each field or die good object further including method causing relative movement between the electron beam column.

31. According to one of Claim 25 to Claim 30, said at least one of the identified hot spot regions including method.

32. According to Claim 31, said computer further including method determining the presence and/or positioning the hot spot.

33. According to Claim 31 or Claim 32, further including method identifying a hot spot by computer simulation.

34. According to one of Claim 25 to Claim 33, said object including method a substrate or semiconductor wafers.

35. According to one of Claim 25 to Claim 34, from said object based on the detected electronic derived from parameters, said objects or patterning device further including method to the gate lines.

36. In electron beam device,

Each of the plurality of the electron beam column - said electron beam and the electron beam column number - 2 are configured to detect light scattered from the object or an electron; and

One or more electron beam column is moved relative to the other one or more electron beam column actuator system configured to at least partially overlapping with a plurality of number 1 number 2 - said actuator system includes a plurality of moveable structure and movable structures, said number 1 and number 2 - electron column by said movable structures

A including device.

37. According to Claim 36, one or more of the moveable structure said number 1 moveable structure movable relative to the other of said number 1 and one or more, and/or one or more of the moveable structure said number 2 moveable structure said number 2 different ones or more of the movable device.

38. According to Claim 36 or Claim 37, said one of the electron beam column number 2 number 1 component and connected to the column structure having components, said number 1 components may be physically combined with one of the moveable structure movably said number 1 movably said number 2 said number 2 components may be physically moveable structure with one of the coupling device.

39. According to Claim 38, said number 1 component moveable structure located within said number 1, and/or said number 2 component said number 2 moveable structure located within the device.

40. According to Claim 38 or Claim 39, said column structure located at a fixed position relative to the moveable structure said number 1 for holding the moveable structure configured to couple with said number 1 to number 1 brake and/or said number 2 located at a fixed position relative to the moveable structure for maintaining said column structure further including device moveable structure configured to couple with said number 2 to brake the number 2.

41. According to Claim 40, said number 1 brake and said number 2 and brake, said number 2 in combination brake while said movable structure into a number of column structure said number 2 said number 1 brake configured to move said number 1 and number said electron beam column combination brake while said number 2 is said column structure of said electron beam column into a brake configured to move the moveable structure said number 1 gear system further including device number.

42. According to one of Claim 36 to Claim 41, one or more electron beam column number 1 or number 2 number 1 and adjacent movable structure and/adjacent the lateral movable between and/or adjacent number 2 device is positioned between the moveable structure movable structures.

43. According to one of Claim 36 to Claim 42, said at least one of the electron beam column is less than said number 1 and number 2 connected to a short stroke actuator having a moving range of movement of moveable structure device.

44. According to one of Claim 36 to Claim 43, further comprising a plurality of sensors, each associated with the electron beam column adjacent an associated device configured to measure the distance to determine the location of the electron beam column.

45. According to one of Claim 36 to Claim 44, each electron beam column is the electron beam column object associated with different each field or die configured to good device.

46. According to Claim 45, including machine-readable instructions further includes temporary computer program number non - article, said at least some of the instructions, each increase in the area of said electron beam and each field or die each field or die to said objects and said good device configured to cause relative movement between the electron beam column.

47. Electron beam testing method as,

Each of the electron beam and the electron beam column having a plurality of electron beam column number - said step 2 are configured to detect light scattered from the object or an electron -;

Actuator system using one or more electron beam column is moved relative to the other one or more electron beam column - said actuator system includes a plurality of at least partially overlapping the moveable structure with a plurality of number 1 and number 2 movable structures, said number 1 and number 2 - electron column by said movable structures;

The electron beam from the electron beam column said object on said said number;

The electron beam column number 2 or scattered from said object using said detecting electron

A including method.

48. According to Claim 47, one or more of the moveable structure said number 1 moveable structure movable relative to the other of said number 1 and one or more, and/or one or more of the moveable structure said number 2 different ones or more of the moveable structure said number 2 movable method.

49. According to Claim 47 or Claim 48, said one of the electron beam column number 1 component and number 2 have components connected to the column structure, moveable structure with one of said number 1 physically coupling said number 1 while moving component and said number 2 while moving component said number 2 physically coupling with one of the moveable structure further including method.

50. According to Claim 49, said number 1 component moveable structure located within said number 1, and/or said number 2 component moveable structure located within said number 2 method.

51. According to Claim 49 or Claim 50, said number 1 located at a fixed position with respect to said column structure moveable structure for maintaining said number 1 to number 1 movable structure and/or said number 2 order to brake said column structure located at a fixed position relative to the moveable structure for maintaining said number 2 number 2 to brake and bonding the substrate to the movable structure further including method.

52. According to Claim 51, said number 2 in combination brake while said number 1 number of moving said movable structure is said column structure combining a brake said number 2 the electron beam column, said number 1 in combination brake while said movable structure into a number of electron beam column said number 2 brake said number 1 moving said column structure including method.

53. According to one of Claim 47 to Claim 52, one or more electron beam column number 1 or number 2 number 1 and adjacent movable structure and/adjacent the lateral movable between movable structures is positioned between the moveable structure and/or adjacent number 2 method.

54. According to one of Claim 47 to Claim 53, said at least one of the electron beam column is less than said number 1 and number 2 using a short stroke actuator having a moving range of movement of moveable structure moving method.

55. According to one of Claim 47 to Claim 54, further comprising a plurality of sensors, each associated with the electron beam column adjacent an associated method for distance measurement to determine the location of the electron beam column.

56. According to one of Claim 47 to Claim 55, each electron beam column is the electron beam column object associated with different each field or die configured to good method.

57. According to Claim 56, each field or die each electron beam to said increase of said each field or die good object further including method causing relative movement between the electron beam column.

58. According to one of Claim 47 to Claim 57, said object including method a substrate or semiconductor wafers.

59. According to one of Claim 47 to Claim 58, from said object based on the detected electronic derived from parameters, said objects or patterning device further including method to the gate lines.

60. As patterning device repair device,

Each beam column includes a plurality of beam column - number configured to radiation beam, each radiation beam using said beam column associated with each said radiation beam patterning device are configured to repair an area of - different each field or die; and

One or more beam column at least one beam column configured to move relative to the other actuator system

A including device.

61. According to Claim 60, said beam columns each said patterning device further configured to detect an electron scattering or 2 from the device.

62. According to Claim 61, each beam column includes said beam column associated with said different each field or die configured to good device.

63. According to one of Claim 60 to Claim 62, said beam columns each number configured to electron beam device.

64. According to one of Claim 60 to Claim 62, each beam column includes a number device configured to said ion beam.

Said description is but number without an exemplary intended substrate. The, described hereinafter described and claim wider of the engine it is apparent to one skilled in the modified such as will. For example, in the form of at least one embodiment one or more aspects of one or more aspects of one or more other embodiment may be combined with or in the form of a proper can be replaced. Therefore, adaptive and modification is based on the disclosure herein taught and balance such number embodiment examples of a semantic and displaceable within the range intended substrate. The specification of the specification of the present invention replace or term expert terms or representation to be interpreted by the falling on one number for splicing one skilled teaching and balance was not described by example for accomplishing these understanding. An exemplary embodiment of the present invention holes are formed on the width and range either by providing examples and number into one immediately after being turned off, then should fee so as to range and a displaceable only as defined.