УНИВЕРСАЛЬНЫЙ ДУГОВОЙ ИСТОЧНИК ВУФ-ФОТОНОВ И ХИМИЧЕСКИ АКТИВНЫХ ЧАСТИЦ

Изобретение относится к источникам ВУФ-фотонов и химически активных частиц, предназначенным для поверхностной обработки ВУФ-излучением, а также для плазмохимического травления и наращивания материалов на подложках с большой общей обрабатываемой площадью. Универсальный дуговой источник ВУФ содержит разрядную трубку из охлаждаемых металлических секций с защитным покрытием, холодный дуговой катод с удержанием катодных пятен дуги внутри рабочей полости, анод, систему откачки и напуска рабочего газа, при этом в секциях трубки перпендикулярно оси разряда выполняются боковые отверстия сравнимого с длиной секции размера, в которых с помощью держателей герметично фиксируются обрабатываемые подложки с масками (либо без масок). Технический результат: возможность облучения, травления и наращивания материалов на подложках с большой общей обрабатываемой площадью за счет использования активных частиц и ВУФ-фотонов, излучаемых почти со всей боковой поверхности разряда. 2 з.п. ф-лы, 1 ил.

УСТРОЙСТВО ДЛЯ ИССЛЕДОВАНИЯ ВАКУУМНОГО РАЗРЯДА ЭЛЕКТРОНОВ В МАГНИТНОМ ПОЛЕ

Изобретение относится к электромагнетизму и научному приборостроению. Устройство для исследования вакуумного разряда электронов в вакуумном поле включает магнит, над полюсом которого подвешена плоская стеклянная вакуумированная изнутри кювета с автоэмиссионным катодом и анодом, оппозитно установленными с одного края кюветы и подключенными к выводам трансформатора Тесла (катушке Румкорфа), первичная обмотка которого подключена к накопительному конденсатору через тиристор, управляемый от последовательно соединенных генератора тактовых импульсов с регулируемой частотой и устройства запуска тиристора, накопительный конденсатор заряжается через резистор от высоковольтного источника питания, а свободно подвешенная над магнитным полюсом магнита вакуумированная кювета со стороны расположения автоэлектронного катода в виде иглы и анода механически связана с пьезодатчиком с его жестким неподвижным упором с противоположной стороны датчика, а выход пьезодатчика через высокочувствительный импульсный ...

KORPUSKULARSTRAHLGERAET MIT EINEM AXIALEN ROHR ZUR VAKUUMFUEHRUNG

Gerät und Verfahren zur Probenuntersuchung mittels Ladungsträgerstrahlen

VERFAHREN ZUM UNTERSUCHEN UND/ODER ZUM MODIFIZIEREN VON OBERFLÄCHENSTRUKTUREN EINER PROBE

IONENIMPLANTATIONSANORDNUNG MIT STEUERUNG DES AUFFANGSCHEIBEN-OBERFLAECHENPOTENTIALS

ELEKTROSTATISCHE FANGVORRICHTUNG FÜR, IN EINEM IONENSTRAHL MITGEFÜHRTEN TEILCHEN

Elektronenmikroskop

CHARGED PARTICLE ENERGY ANALYSERS

Improvements in and relating to electron lens systems

... 647,703. Electron lenses. BRITISH THOMSON-HOUSTON CO., Ltd. Oct. 25, 1944, No. 20729. Convention date, Oct. 25, 1943. [Class 39 (i)] In a three-element electron lens for an electron microscope, comprising two outer discs 10, 12, Fig. 2, fitting within and in conductive contact with a metallic cylinder 18, and an insulated inner disc 11 supported by an insulator contacting the cylinder and spaced from the outer discs by cylindrical spacers 22, 23, the said insulator 30, Fig. 4, is arranged to contact the inner element at a plurality of spaced points so as to reduce insulation losses. As shown, the insulator 30 is a bent vitreous rod engaging the inner member at points 31 and the cylinder 18 at ground-off points 32. In a modification, contact is still further reduced by forming the rod at points 31 with portions of sharper radius.

Flood gun for charge neutralization

Particle-optical projection system

In a particle-optical projection system ( 32 ) a pattern (B) is imaged onto a target (tp) by means of energetic electrically charged particles. The pattern is represented in a patterned beam (pb) of said charged particles emerging from the object plane through at least one cross-over (c); it is imaged into an image (S) with a given size and distortion. To compensate for the Z-deviation of the image (S) position from the actual positioning of the target (tp) (Z denotes an axial coordinate substantially parallel to the optical axis cx), without changing the size of the image (S), the system comprises a position detection means (ZD) for measuring the Z-position of several locations of the target (t ...

Thermal compensation in magnetic field influencing of an electron beam

A device for influencing an electron beam, for example a beam deflecting device in an electron beam lithography machine, comprising a beam influencing coil 13 operable to influence an electron beam EB by way of a magnetic, field and a heat dissipation compensating coil 14 operable to provide a heat output to compensate for any change in heat dissipation from the device due to operation of the beam influencing coil 13. The compensating coil 13 can be controlled, for example, by measurement 19 of the heat dissipation from the device and calculating 18 current supply 16 to the coil 13 in dependence on the measured dissipation.

Thermal compensation in magnetic field influencing of an electron beam

Improvements in ion beam microanalysers

... 1,038,220. Ion microscopes. CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE & G.S.F.-COMPAGNIE GENERALE DE TELEGRAPHIE SANS FIL. Nov. 27, 1963 [Nov. 28, 1962], No. 46924/63. Heading H1D. An ion microscope for analysing the surface of a bombarded sample 1 comprises a source of ions 20, electron-optical means 21, 22 for accelerating the ions and focusing them into a beam and directing the beam on to the sample 1, means 23 for neutralizing ions before they reach sample 1, and means for extracting from the beam any ions that have not been neutralized, thus producing a beam of fast neutral atoms which bombard sample 1 and extract secondary ions from it. As shown, positive ions are used and are neutralized by passing them through an enclosure 23 filled with gas at a low pressure so that they tear off electrons from the gas atoms and are thus neutralized. Any ions which have not been neutralized in enclosure 23 are extracted from the beam by a deflector and an ion trap (Fig. 2, not shown) at the ...

Improved method and apparatus for reducing cross contamination of species during ion implantation

Electron-beam evaporation device for evaporation coating apparatus

An electron beam evaporation device for vacuum evaporators, comprises, a supporting bar and a retainer for the material to be evaporated, an electron beam source and a deflecting magnet for directing the electron beam onto the material to be evaporated or mounted on said supporting bar. At least two of the elements are mounted on the bar so as to be displaceable thereon. Preferably, the retainer for the material to be evaporated is provided on one end of the bar and the electron beam source and the deflecting magnet are displaceable along the bar.

COOLING DEVICE FOR VACUUM TREATMENT DEVICE

PARTICLE BEAM EQUIPMENT WITH COOLED ONE ANTIKONTAMINATOR AND/OR SAMPLE HOLDERS

ELECTRON MICROSCOPE

CHARGE CARRIER PARTICLE BEAM SYSTEM

DEVICE AND PROCEDURE FOR THE REDUCTION OF THE WAFER LOADING WITH THE ION IMPLANTATION.

ION IMPLANTATION EQUIPMENT, IN WHICH ELECTRICAL LOADING OF SUBSTRATES IS AVOIDED.

ELECTRON-BEAM INSTALLATION FOR METALWORKING.

HIGH-CONSTANT RADIATION PRODUCER FUER CHARGED PARTICLES.

Device for the treatment of material courses in vacuum

Circuit for the delimitation on a goal material arranged and by a betatron of the emitted electron-beam stream in an electron-beam furnace

IMPROVED METHOD AND APPARATUS FOR REDUCING CROSS CONTAMINATION OF SPECIES DURING ION IMPLANTATION

ION IMPLANTING APPARATUS AND ION IMPLANTING METHOD

An ion implanting apparatus for irradiating a material, for example, a semiconductor wafer, with an ion beam generated at an ion source, for implanting the ion into the material, is provided with a magnet at a side of the material opposite to a side into which the ion is irradiated. Thereby, the implantation is performed without charging thereon and with a high yielding ratio.

APPARATUS FOR TREATING THE SURFACE OF WORKPIECES BY MEANS OF A PLASMA TORCH

The apparatus serves for treating workpieces by means of a plasma torch in a gaseous, preferably in an inert gaseous atmosphere. For this purpose, there is provided a gas-tight container and, in the interior of the container, a plasma gun as well as a cooling member for cooling the treated workpiece by a gaseous cooling medium stream. The cooling medium is a gas circulating in a closed circuit. Thus, the the cooling gas can continuously used because heat is removed from the gas in a heat exchanger. A cooling operation can be realized in this way in temperature regions which are much higher than if liquified gas is used.

Emetteur d'electrons pour canon à électrons

Installation à très haute tension continue comportant un ensemble d'alimentation et une utilisation

Installation à très haute tension continue comportant un ensemble d'alimentation

Canon à électrons

Vorrichtung zum Drehen, Vorschieben und Zentrieren der Elektroden von insbesondere zur Spaltung von Kohlenwasserstoffen dienenden Lichtbogeneinrichtungen

POWER SUPPLY SYSTEM FOR ELECTRON-BEAM CANNONS.

ELECTRON-BEAM EVAPORATION MECHANISM FOR VACUUM EVAPORATING PLANTS.

ION IMPLANTATION EQUIPMENT WITH CONTROLLING OF THE TARGET SURFACE BARRIER.

ELECTRON-OPTICAL LENS ARRANGEMENT FOR STATIC AND DYNAMIC FOCUSING.

DEVICE FOR ACCELERATING CHARGED PARTICLES AND ION IMPLANTATION MECHANISM WITH SUCH A DEVICE.

Ion beam system and method for reducing foreign pollution to substrate thereof

Ion implantation surface charge control method and apparatus

Reaction cavity heating device

Plasma processing apparatus

The present invention provides a plasma processing apparatus, capable of preventing air exhaust airflow from concentrating in a plurality of exhaust outlets formed in a processing chamber, and evening the air exhaust airflow in the processing chamber. The plasma processing apparatus is provided with a baffle part (350) fro separating plasma generating areas of the processing chamber (200) from exhaust passages of the processing chamber, the baffle part is composed of an upstream side baffle and a downstream side baffle arranged with a distance in a mode of covering a loading bench (300), eachbaffle is provided with a plurality of openings for communicating the plasma generating areas and the exhaust passages, and the openings of the downstream side baffle (360) are gap-shaped openings (364) that the opening has a larger width when it is more far away from the exhaust outlet (208).

Electron injection in ion implanter magnets

One or more electron sources are utilized to inject electrons into an ion beam being transported between the polepieces of a magnet. In some embodiments, the electron sources are located in cavities in one or both polepieces of the magnet. In other embodiments, a radio frequency or microwave plasma flood gun is located in a cavity in at least one of the polepieces or between the polepieces.

SPECTROMETER OF ROENTGEN

Improvements in or relating to electronic microscopes

POWER SUPPLY

METHOD AND MEANS TO CORRECT the ASTIGMATISM Of a MICROSCOPE OF SWEEPING HAVE BEAM ELECTRONIC

PROCEDURE OF CONTINUOUS CONTROL OF THE QUALITY OF A WELD BY ELECTRONIC BOMBING.

ORDER CURRENT OF BEAM IN A MACHINE TO BE WELDED HAS ELECTRONIC BEAM

INFLATABLE JOINT HAS GREAT CLEARANCE

PROCESS AND ADJUSTING DEVICE OF the HEATER CURRENT OF the CATHODE Of an INDUSTRIAL INSTRUMENT HAVE Electron beam

VIBRATION ISOLATORS FOR EVACUATED SCIENTIFIC INSTRUMENT

Process and apparatus for the surface dressing of ingots and slabs to the electronic beam

Sealing device for maintaining a vacuum - during the location of an electron gun in the welding of two plates

Microanalysor by secondary ionic emission

INSTALLATION FOR THE WORK OF METALS BY ELECTRON BEAM

Electronic device provided with a generator of ions and generator of ions destinéà such an apparatus

POWER SUPPLY CIRCUIT FOR AN EVAPORATOR ELECTRON BEAM

DEVICE OF SWEEPING HAS BEAM OF PARTICLES CHARGED

ELECTRON GUN HAS DISCHARGE IN A GAS BEING USED TO GENERATE AN ELECTRON BEAM BY DISCHARGE BY GLEAM

DEVICE MICROFABRICATION AND SCOURING COMPOSITION

PROCESS AND DEVICE FOR the AUTOCORRECTION OF the ABERRATIONS Of a BEAM OF PARTICLES CHARGED

INFLATABLE JOINT HAS GREAT CLEARANCE

SEALING DEVICE

DEVICE OF TREATMENT Of a SAMPLE PER IMPULSE ELECTRONIC BEAM

CONTROL CIRCUIT OF ELECTRON BEAMS FOR EVAPORATORS HAS ELECTRON BEAMS

CAROUSEL

ACCELERATOR OF BEAM OF PARTICLES

검사 방법 및 장치

... 전자빔 검사 장치로서, 복수의 전자빔 칼럼 - 상기 전자빔 칼럼 각각은 전자빔을 제공하고 대상물로부터 산란된 또는 2 차 전자를 검출하도록 구성됨 -; 및 하나 이상의 전자빔 칼럼을 다른 하나 이상의 전자빔 칼럼에 대해 이동시키도록 구성된 액추에이터 시스템 - 상기 액추에이터 시스템은 복수의 제 2 가동 구조들과 적어도 부분적으로 겹치는 복수의 제 1 가동 구조들을 포함하고, 상기 제 1 및 제 2 가동 구조들은 상기 복수의 전자빔 칼럼을 지지함 - 을 포함한다.

자가 클리닝 선형 이온화 바아 및 그 방법

... 적어도 하나의 이온화 전극, 적어도 하나의 전극 클리너, 및 적어도 2개의 스풀 조립체를 갖는 자가 클리닝 선형 이온화기가 개시된다. 전극은 대향 단부를 갖고, 이온 구름을 생성하고 사용에 따라 열화 생성물을 발생시키는 표면을 갖는 축방향 작동 길이부를 형성한다. 전극의 작동 길이부는 고정형이지만, 전극은 가동형이다. 전극 클리너는 또한 고정형이고, 그 작동 길이부를 따라 전극에 선택적으로 맞물린다. 전극의 대향 단부는 전극 클리너가 이동 중에 전극으로부터 표면 열화 생성물의 적어도 일부를 제거하도록 이온화 전극을 선택적으로 이동시키는 대향 스풀 조립체에 고정된다. 주기적으로, 교대로, 또는 동시에 발생할 수도 있는 자가 클리닝 및 이온화 동작 모드를 갖는 개시된 이온화기를 사용하는 방법이 또한 개시된다.

ION SOURCE

PRESSURE CONTROL VALVE ASSEMBLY OF PLASMA PROCESSING CHAMBER AND RAPID ALTERNATING PROCESS

TOGETHER INFLATABLE CAPABLE TO BE SUBMITTED TO A WADDING PRESSURE

Mass analysis variable exit aperture

A method and apparatus is provided for reducing unwanted isotopes of an ion implantation species from an ion beamline. The apparatus herein disclosed is a mass analysis variable exit aperture that selectively reduces the size of an exit aperture as seen by an ion beam. In one embodiment, the variable mass analysis exit is located within the mass analyzer at a location upstream of a resolving aperture and is configured to effectively limit the size of the exit aperture to allow passage of desired implantation isotope(s) while blocking the passage of unwanted implantation isotopes. In one particular embodiment, the mass analysis variable exit aperture is mounted in the beam guide which, in turn, is mounted between the poles of the AMU magnet(s). A mechanical drive mechanism enables the blocking structure to be moved into the beam path in a graduated fashion as guided by a control unit tied to beam characteristics.

Plasma treatment device and corrosion-resistant protection method for gas passage avoiding the influence of the thermal micro-cracking phenomenon of the surface treatment protective layer on the chamber cover

The invention relates to a plasma treatment device and a corrosion-resistant protection method for a gas passage. A bushing is arranged inside a gas passage for introducing a reaction gas into a reaction chamber, and the reaction gas is transported in the bushing; the bushing is made of a material for preventing corrosion by a reaction gas. The bushing is in contact with an inner wall of the gas passage or has a gap therebetween, or is in contact with an inner wall of a surface treatment protective layer formed on the inner wall of the gas passage or has a gap therebetween for double protection. It is also possible to provide an O-shaped groove at the reaction gas outlet end and/or the inlet end surrounding the bushing. The invention solves the problem caused by inconsistant thermal expansion coefficients of the surface treatment protective layer and the base material of the reaction chamber cover, and avoids the influence of corrosion caused by the thermal micro-cracking phenomenon of ...

Method for making transmission electron microscope grid

Transmission electron microscope grid

GAS INJECTION SYSTEM FOR ION BEAM DEVICE

A gas injection system, including an extraction plate having an extraction aperture for allowing passage of an ion beam through the extraction plate, the extraction plate further having a gas slot for expulsion of a residue removal gas from the extraction plate. The gas injection system may include a gas conduit extending through the extraction plate between the gas slot and a gas manifold, a gas source connected in fluid communication with the gas manifold, the gas source containing the residue removal gas. The gas manifold may include a valve adjustable between a first position, wherein the residue removal gas is allowed to flow into the extraction plate, and a second portion, wherein the residue removal gas can be vented from the extraction plate. The gas injection system may further include a manifold cover coupled to the gas manifold.

PHASE-COMPENSATING VIBRATION CANCELLATION SYSTEM FOR SCANNING ELECTRON MICROSCOPES

A system for adjusting the scanning pattern of an electron beam (14) in a scanning electron microscope (7) to decrease image sensitivity to vibrations. In the system, a seismometer (51) is connected to sense displacement velocity caused by vibrations, an integrator (59) is provided for integrating signals from the seismometer (51), and a phase compensation system (40) is provided for operating upon the integrated signals to provide phase compensated signals that are substantially 180 degrees out of phase with the sensed vibrations. The phase-compensated signals are used for adjusting the normal scanning pattern of the electron beam microscope to reduce the effects of the sensed vibrations on images provided by the microscope.

SIMULTANEOUS FLOODING AND INSPECTION FOR CHARGE CONTROL IN AN ELECTRON BEAM INSPECTION MACHINE

Disclosed are methods and apparatus for simultaneously flooding a sample 224 (e.g., a semiconductor wafer) to control charge and inspecting the sample 224. The apparatus 200 includes a charged particle beam generator (202-216) arranged to generate a charged particle beam 201 substantially towards a first portion of the sample and a flood gun 230 for generating a second beam towards a second portion of the sample. The second beam is generated substantially simultaneously with the inspection beam 201. The apparatus 200 further includes a detector 226 arranged to detect charged particles 205 originating from the sample portion. In a further implementation, the apparatus 200 further includes an image generator for generating an image of the first portion of the sample from the detected particles. In one embodiment, the sample is a semiconductor wafer. In a method aspect, a first area of a sample is flooded with a flood beam to control charge on a surface of the sample. A second area of the ...

SYSTEM AND METHOD FOR SAMPLE ANALYSIS BY THREE DIMENSIONAL CATHODOLUMINESCENCE

A system is disclosed for obtaining layered cathodoluminescence images of a sample wherein the light collecting equipment is highly efficient and wherein the microtoming or Focused Ion Beam equipment does not interfere with the efficiency of the light collecting equipment and wherein the position of the sample with respect to the light collecting equipment is not disturbed in the microtoming or ion beam milling process. Embodiments are disclosed allowing simultaneous collection of cathodoluminescence images and collection of other electron based imaging signals such as backscattered and secondary electrons.

METHOD AND APPARATUS FOR PROTECTING A SUBSTRATE SURFACE FROM CONTAMINATION USING THE PHOTOPHORETIC EFFECT

An apparatus (1) for processing a substrate surface (2) in a process chamber (1) wherein during chemical or physical altering of the substrate surface a laser beam (10) is projected inside the processing chamber and along a trajectory which does not contact the substrate surface (2) in order to capture particles (9A, 9, 9B) by means of the photophoretic effect, particles which would otherwise impinge upon and contaminate the substrate surface (2).

LAYERED SCANNING CHARGED PARTICLE APPARATUS PACKAGE HAVING AN EMBEDDED HEATER

A scanning charge particle apparatus includes a layered charged particle beam column package; a sample holder; and a heater, such as a resistive heater, in one of the layers of the package that conductively heats layers and/or components.

MULTI-ELECTRODE STACK ARRANGEMENT

The invention relates to an electrode stack () comprising stacked electrodes (-) for manipulating a charged particle beam along an optical axis (A). Each electrode comprises an electrode body with an aperture for the charged particle beam. The electrode bodies are mutually spaced and the electrode apertures are coaxially aligned along the optical axis. The electrode stack comprises electrically insulating spacing structures () between each pair of adjacent electrodes for positioning the electrodes (-) at predetermined mutual distances along the axial direction (Z). A first electrode and a second electrode each comprise an electrode body with one or more support portions (), wherein each support portion is configured to accommodate at least one spacing structure (). The electrode stack has at least one clamping member (-) configured to hold the support portions () of the first and second electrodes, as well as the intermediate spacing structure () together. 1. An electrode stack , in particular a collimator electrode stack , wherein the electrode stack comprises:a plurality of stacked electrodes for manipulating a charged particle beam along an optical axis, wherein each electrode comprises an electrode body with an electrode aperture for permitting passage of the charged particle beam, wherein the electrode bodies are mutually spaced along an axial direction that is substantially parallel with the optical axis, and wherein the electrode apertures are coaxially aligned along the optical axis, andspacing structures essentially consisting of an electrically insulating material, and arranged between each pair of adjacent electrodes for positioning the electrodes at predetermined mutual distances along the axial direction;wherein a first electrode and a second electrode each comprise an electrode body with one or more support portions, wherein each support portion is configured to accommodate at least one spacing structure,wherein the electrode stack is formed with at ...

SPATIALLY VARIABLE WAFER BIAS POWER SYSTEM

Planar View Sample Preparation

A method and apparatus is described for orienting samples for charged particle beam operations. A sample is attached to a probe with a major surface of the sample at a non-normal angle to the probe shaft, and the probe shaft is rotated to reorient the sample. The invention is particularly useful for preparing planar view TEM samples. The invention allows for a sample to be mounted to a TEM grid and thinning by an ion beam without removing the grid from the vacuum chamber for reorienting. In one embodiment, a probe oriented at an angle, such as 45 degrees, to the sample stage has a probe tip with a flat area oriented parallel at 45 degrees to the probe axis, that is, the flat area is parallel to the sample stage. The flat area of the probe tip is attached to the sample, and when the probe is rotated 180 degrees, the orientation of the sample changes by 90 degrees, from horizontal to vertical. The sample can then be attached to a vertically oriented TEM grid on a sample stage. The sample ...

Ion implanting apparatus and method

The elimination of all externally applied electrostatic and magnetic fields between the mass resolving system (133) and a wafer to be implanted allows electrons produced by ion-solid or ion neutral collisions to travel freely to the wafer. This reduces charging of the wafer and thus reduces a major source of device damage. ...

Method and apparatus for conducting heat to or from an article being treated under vacuum

A method and apparatus are disclosed for providing heat conduction between a semiconductor wafer (24) being treated in a vacuum chamber under vacuum, and a support member (36) via a gas under pressure of about 0.5 to 2.0 Torr injected between the wafer and the support member. The wafer is clamped to the support member by a clamp (43) and the support member which is cooled to cool the wafer which in the particular example is subjected to ion implantation. A seal (47) is provided between the wafer and the support member adjacent the periphery of the wafer although this is not essential. By heating the support member the wafer may be heated by thermal conduction through the gas in other suitable vacuum treatments.

Ion beam potential detection probe

CONTAIMINATION PREVENTING DEVICE IN ELECTRON RAY DEVICE

PURPOSE: To prevent the contamination of an electron ray stop and a knife-edge for measuring the diameter of electron beams without any influence over electron beams, by heating the electron ray stop and the knife-edge. CONSTITUTION: A conductive heat insulator 5 for intercepting heat is interposed between an electron ray stop lens 3 and an electron ray stop 4. A semiconductive laser 6 is set on the inner wall of the end drum 9, and a portion of the electron ray stop 4 which is apt to be contaminated due to collision with electron beams is irradiated concentrically by laser beams 7 and heated. On the other hand, a conductive heat insulator 12 for intercepting heat is interposed between a Faraday cup 10 and a knife-edge 11, and a portion of the knife-edge 11 colliding with electron beams 1 is irradiated concentrically by laser beams from a semiconductor laser 13 and heated. COPYRIGHT: (C)1982,JPO&Japio ...

ELECTRONIC-RAY APPARATUS

PURPOSE: To enable the deflecting plate of an electronic-ray apparatus to be cleaned without breaking up the system, by subjecting the deflecting plate to plasma etching. CONSTITUTION: A switch S1 is switched from a deflection power-source 9 to a high- pressure power-source 16, before a switch S2 is switched on to close an electromagnetic valve 2. Following that, in order to introduce gas form a bomb 19, a switch 3 is switched on to open an electromagnetic valve 20. As a result, the partial pressure of the gas in the system is raised, and discharge is initiated between a pair of deflection plates. Furthermore, the deflection plates reach plasma condition, and the surface of the plates are subjected to etching, thus the dirt of the surfaces being scattered. The dirt is exhausted outside the system by using vacuum exhaust equipment. COPYRIGHT: (C)1981,JPO&Japio ...

Charged particle beam apparatus and method for stably obtaining charged particle beam image

Since charging characteristics differ between the outer circumferential portion and the center portion of a sample to be inspected, equivalent inspection sensitivities cannot be obtained in the outer circumferential portion and the center portion of the sample to be inspected. A sample cover is provided in the outer circumferential portion of a sample holder on which the sample to be inspected is placed. Charging characteristics of the sample cover are changed according to charging characteristics of the sample to be inspected. Consequently, uniform charged states can be formed in the outer circumferential portion and the center portion of the sample. Inspection/observation of the outer circumferential portion of the sample can be realized at higher sensitivity than in the past.

Oxidative cleaning method and apparatus for electron microscopes using uv excitation in an oxygen radical source

An improved method and apparatus for the production of oxygen radicals that may be used for cleaning portions high vacuum instruments. The apparatus comprises a VUV vacuum ultraviolet light source or lamp placed in an irradiation chamber for the photo disassociation of oxygen in communication with the main chamber on a specimen chamber port or inside the specimen chamber. Air or other oxygen-containing gas is admitted to the irradiation chamber for photo disassociation. The VUV source radiates UV wavelengths below 193 nm that are used to disassociate oxygen in the gas to create the oxygen radicals and the pressure is held high enough for complete absorption of the light. The oxygen radicals are differentially pumped into main chamber at pressure below 100 milliTorr to prevent recombination to clean hydrocarbons from the surfaces instrument by oxidation to volatile oxide gases. The oxide gases are then removed by the vacuum pump.

DEFECT INSPECTION APPARATUS AND DEFECT INSPECTION METHOD

In accordance with an embodiment, a defect inspection apparatus includes a charged beam irradiation unit, a detection unit, an energy filter, and an inspection unit. The charged beam irradiation unit generates a charged beam and irradiates a sample including a pattern as an inspection target thereon with the generated charged beam. The detection unit detects secondary charged particles or reflected charged particles generated from the sample by irradiation of the charged beam and outputs a signal. The energy filter is arranged between the detection unit and the sample to selectively allow the secondary charged particles or the reflected charged particles with energy associated with an applied voltage to pass therethrough. The inspection unit applies voltages different from each other to the energy filter and outputs information concerning a defect of the pattern from an intensity difference between signals obtained under application voltage different from each other. 1. A defect inspection apparatus comprising:a charged beam irradiation unit configured to generate a charged beam and irradiate a sample comprising a pattern as an inspection target thereon with the generated charged beam;a detection unit configured to detect secondary charged particles or reflected charged particles generated from the sample by irradiation of the charged beam and to output a signal;an energy filter located between the detection unit and the sample, the energy filter being configured to selectively allow the secondary charged particles or the reflected charged particles with energy associated with an applied voltage to pass therethrough; andan inspection unit configured to apply voltages different from each other to the energy filter and output information concerning a defect of the pattern from an intensity difference between signals obtained under application voltage different from each other.2. The apparatus of claim 1 ,wherein a plurality of pairs of the energy filter and the ...

Inductively coupled plasma flood gun using an immersed low inductance rf coil and multicusp magnetic arrangement

An inductively coupled radio frequency plasma flood gun having a plasma chamber with one or more apertures, a gas source capable of supplying a gaseous substance to the plasma chamber, a single-turn coil disposed within the plasma chamber, and a power source coupled to the coil for inductively coupling radio frequency electrical power to excite the gaseous substance in the plasma chamber to generate plasma. The inner surface of the plasma chamber may be free of metal-containing material and the plasma may not be exposed to any metal-containing component within the plasma chamber. The plasma chamber may include a plurality of magnets for controlling the plasma and an exit aperture to enable negatively charged particles of the resulting plasma to engage an ion beam that is part of an associated ion implantation system. Magnets are disposed on opposite sides of the aperture used to manipulate the electrons of the plasma.

PLASMA PROCESSING APPARATUS AND TEMPERATURE CONTROL METHOD

A plasma processing apparatus includes a lower electrode on which a wafer W is provided. A second coolant path is formed in a spiral shape in a region within the lower electrode corresponding to where the wafer W is placed. Further, a first coolant path is formed in a spiral shape to be located in a lower region within the lower electrode corresponding to where the second coolant path is formed. A pipeline connected to a chiller unit is branched into a first pipeline connected to the first coolant path and a second pipeline connected to the second coolant path . A check valve allowing a coolant to flow in one direction is provided on the first pipeline , and a reversing unit reversing a flow direction of the coolant is provided on the pipeline 1. A plasma processing apparatus , comprising:a processing chamber in which a plasma processing space is formed;a mounting table provided within the processing chamber and configured to mount thereon a processing target substrate;a gas supply device configured to introduce a processing gas to be used in plasma reaction into the plasma processing space;a plasma generating device configured to supply electromagnetic energy to excite the processing gas introduced in the plasma processing space into plasma;a plurality of coolant paths formed within the mounting table;a temperature controller configured to control a temperature of a coolant flown and circulated through the plurality of coolant paths;a check valve provided at a part of the plurality of coolant paths; anda reversing unit configured to reverse a flow direction of the coolant that flows and circulates through the plurality of coolant paths.2. The plasma processing apparatus of claim 1 , further comprising:a controller configured to control the reversing unit to reverse the flow direction of the coolant according to a switchover timing of plasma processes performed in the plasma processing apparatus.3. The plasma processing apparatus of claim 1 ,wherein the plurality of ...

Substrate processing apparatus and substrate processing method using same

A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.

CHARGED PARTICLE BEAM APPARATUS

Provided is a charged particle beam apparatus adapted so that even when an additional device is not mounted in the charged particle beam apparatus, the apparatus rapidly removes, by neutralizing, a local charge developed on a region of a sample that has been irradiated with a charged particle beam. 1. A charged particle beam apparatus , comprising:a charged particle source;a charged particle detector that detects charged particles;a power supply that applies to accelerating electrodes an accelerating voltage for accelerating a charged particle beam;a sample stage on which to mount a sample;a power supply that applies to the sample stage a retarding voltage for decelerating the charged particle beam; anda control computer that controls the accelerating voltage or/and the retarding voltage;wherein the control computer is configured to:measure the sample under a condition that the retarding voltage has a value smaller than that of the accelerating voltage; andafter the measurement, undertake control to neutralize an electric charge by reducing a difference between the value of the retarding voltage and that of the accelerating voltage to a value smaller than that obtained during the measurement.2. The charged particle beam apparatus according to claim 1 , wherein:the control computer controls the value of the retarding voltage to increase in a negative direction, and thus undertakes control to neutralize an electric charge by reducing a difference between the value of the retarding voltage and that of the accelerating voltage to a value smaller than that obtained during the measurement.3. The charged particle beam apparatus according to claim 1 , wherein:the control computer controls a difference between the value of the retarding voltage and that of the accelerating voltage to a −20 to 0 [V] range, thereby neutralizing an electric charge.4. The charged particle beam apparatus according to claim 1 , wherein:the control computer controls a difference between the value ...

SUBSTRATE PROCESSING APPARATUS AND GAS SUPPLY APPARATUS

Provided is a substrate processing apparatus in which the concentration of processing gas is matched in a substrate surface at the time of initiating the ejection of the processing gas from a gas supply unit. The gas supply unit is provided with a gas ejecting surface facing the wafer disposed on a disposition unit. The gas supply unit is also provided with gas flow paths, and a flow path length and a flow path diameter of the diverged gas flow paths are set such that periods of time for gas flowing from a gas supply hole to a plurality of gas ejecting holes formed on the gas ejecting surface are matched with each other. Thus, the timings when the processing gas reaches the respective gas ejecting holes immediately after initiating the ejection of the processing gas are matched. 1. A substrate processing apparatus configured to perform processing on a substrate by a processing gas under an atmospheric pressure within a processing chamber , the substrate processing apparatus comprising:a disposition unit provided within the processing chamber configured to dispose the substrate; anda gas supply unit equipped with a gas ejecting surface facing the substrate and provided to supply the processing gas to the substrate disposed on the disposition unit,wherein the gas supply unit includes a plurality of gas ejecting holes formed to be distributed over an entire surface of an area of the gas ejecting surface facing the substrate, and gas flow paths having an upstream side communicated with a common gas supply hole and diverged on the way to have a downstream side opened as the plurality of gas ejecting holes, anda flow path length and a flow path diameter of the diverged gas flow path are set such that periods of time for gas flowing from the gas supply hole to the plurality of gas ejecting holes match each other.2. The substrate processing apparatus of claim 1 , wherein the gas flow path formed to be diverged in a stepwise diagram shape that determines a tournament ...

PLASMA PROCESSING APPARATUS

An inductively coupled plasma process can effectively and properly control plasma density distribution within donut-shaped plasma in a processing chamber is provided. In an inductively coupled plasma processing apparatus, a RF antenna disposed above a dielectric window is segmented in a diametrical direction into an inner coil an intermediate coil and an outer coil in order to generate inductively coupled plasma. Between a first node Nand a second node Nprovided in high frequency transmission lines of the high frequency power supply unit a variable intermediate capacitor and a variable outer capacitor are electrically connected in series to the intermediate coil and the outer coil respectively, and a fixed or semi-fixed inner capacitor is electrically connected to the inner coil 1. A plasma processing apparatus , comprising:a processing chamber having a dielectric window;a substrate holding unit for holding thereon a processing target substrate within the processing chamber;a processing gas supply unit configured to supply a processing gas into the processing chamber in order to perform a plasma process on the processing target substrate;an RF antenna provided outside the dielectric window in order to generate plasma of the processing gas within the processing chamber by inductive coupling; anda high frequency power supply unit configured to supply a high frequency power having a frequency for generating a high frequency electric discharge of the processing gas in the RF antenna,wherein the RF antenna includes an inner coil, an intermediate coil, and an outer coil with gaps therebetween in a radial direction, respectively, and the inner coil, the intermediate coil and the outer coil are electrically connected to one another in parallel between a first node and a second node provided in high frequency transmission lines of the high frequency power supply unit,a variable intermediate capacitor and a variable outer capacitor are provided between the first node and the ...

Optical Characterization Systems Employing Compact Synchrotron Radiation Sources

A compact synchrotron radiation source includes an electron beam generator, an electron storage ring, one or more wiggler insertion devices disposed along one or more straight sections of the electron storage ring, the one or more wiggler insertion devices including a set of magnetic poles configured to generate a periodic alternating magnetic field suitable for producing synchrotron radiation emitted along the direction of travel of the electrons of the storage ring, wherein the one or more wiggler insertion devices are arranged to provide light to a set of illumination optics of a wafer optical characterization system or a mask optical characterization system, wherein the etendue of a light beam emitted by the one or more wiggler insertion devices is matched to the illumination optics of the at least one of a wafer optical characterization system and the mask optical characterization system. 1. A compact synchrotron radiation source for generating light for an optical characterization system comprising:an electron beam generator configured to generate one or more beams of electrons;an electron storage ring including a plurality of magnets configured to bend a trajectory of the electrons to trace a closed path; andone or more wiggler insertion devices disposed along at least one straight section of the electron storage ring, the one or more wiggler insertion devices including a plurality of magnetic poles configured to generate a periodic alternating magnetic field suitable for producing synchrotron radiation emitted substantially along the direction of travel of the electrons by accelerating the electrons periodically in a direction perpendicular to the direction of travel, wherein the one or more wiggler insertion devices are configured to provide light to an optical input of the optical characterization system, wherein the etendue of a light beam emitted by the one or more wiggler insertion devices is matched to an optical input of an optical characterization ...

Chromatic Aberration Corrector and Method of Controlling Same

A chromatic aberration corrector and method of controlling this chromatic aberration corrector is offered. The corrector has first and second multipole lenses for producing quadrupole fields and first and second transfer lenses each having a focal length of f. The first and second multipole lenses are arranged on opposite sides of the first and second transfer lenses. The distance between the first multipole lens and the first transfer lens is f. The distance between the first transfer lens and the second transfer lens is 2f. The distance between the second transfer lens and the second multipole lens is f−Δ. The corrector is so designed that the relationship, f>Δ>0, holds. 1. A chromatic aberration corrector for correcting an electron optical system of an electron microscope for chromatic aberration , said chromatic aberration corrector comprising:first and second multipole lenses for producing quadrupole fields; andfirst and second transfer lenses each having a focal length of f;wherein said first and second multipole lenses are arranged on opposite sides of said first and second transfer lenses;{'sub': 1', '2, 'wherein the distance between the first multipole lens and the first transfer lens is f−Δ, the distance between the first and second transfer lenses is 2f, and the distance between the second transfer lens and the second multipole lens is f−Δ; and'}{'sub': 1', '2, 'wherein the corrector is so designed that the relationship, f>Δ+Δ>0, holds.'}3. A chromatic aberration corrector for correcting an electron optical system of an electron microscope for chromatic aberration , said chromatic aberration corrector comprising:first and second multipole lenses for producing quadrupole fields;first and second transfer lenses each having a focal length of f; andan auxiliary lens on opposite sides of which are arranged the first and second transfer lenses;wherein said first and second multipole lenses are arranged on opposite sides of said first and second transfer lenses ...

TEMPLATES INCLUDING SELF-ASSEMBLED BLOCK COPOLYMER FILMS

Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer. 1. A template for etching a substrate , the template comprising:{'sub': o', '0, 'having sidewalls, opposing ends, a floor, a width, and a length, the polymer matrix in first trenches comprising perpendicular cylindrical openings separated at a pitch distance of about L, and the polymer matrix in second trenches comprising linear openings extending the length of the second trenches and separated at a pitch distance of about L.'}2. The template of claim 1 , wherein the perpendicular cylindrical openings in the polymer matrix in the first trenches are in a hexagonal array.3. The template of claim 2 , wherein the ends of the first trenches are rounded.4. The template of claim 2 , wherein the width of the first trenches is about Lor about n*Lwhere n is an integer of 3 or greater.5. The template of claim 1 , wherein the perpendicular cylindrical openings are in a single line extending the length of the first trenches.6. The template of claim 5 , wherein the width of the first trenches is from about 1.5*Lto about 2*L.7. The template of claim 1 , wherein the openings in the first trenches extend through the polymer matrix to the floors of the first trenches.8. The template of claim 1 , wherein the polymer matrix is crosslinked and comprises a majority block of a self-assembled block copolymer.9. A template for etching a substrate claim 1 , the template comprising:{'sub': o', 'o, 'openings extending through a polymer matrix of a majority block of a self-assembled block copolymer film within trenches in a material, each trench having sidewalls, opposing ends, a floor, a width, and a length, the polymer matrix in first trenches comprising ...

APPARATUS FOR TREATING SUBSTRATE

Provided is a substrate treating apparatus using plasma. A substrate treating apparatus includes a chamber having a treating space therein, a support member disposed in the chamber to support the substrate, a gas supply unit supplying a gas into the chamber, and a plasma source disposed on an upper portion of the camber, the plasma source including an antenna generating plasma from the gas supplied into the chamber, wherein the chamber includes a housing having an opened top surface, the housing having a treating space therein, and a dielectric substance assembly covering the opened top surface of the housing, and wherein the dielectric substance assembly includes a dielectric substance window and a reinforcement film having strength greater than that of the dielectric substance window. 1. A substrate treating apparatus comprising:a chamber having a treating space therein;a support member disposed in the chamber to support the substrate;a gas supply unit supplying a gas into the chamber; anda plasma source disposed on an upper portion of the camber, the plasma source comprising an antenna generating plasma from the gas supplied into the chamber,wherein the chamber comprises:a housing having an opened top surface, the housing having a treating space therein; anda dielectric substance assembly covering the opened top surface of the housing, andwherein the dielectric substance assembly comprises a dielectric substance window and a reinforcement film having strength greater than that of the dielectric substance window.2. The substrate treating apparatus of claim 1 , wherein the reinforcement film is attached to a top surface of the dielectric substance window.3. The substrate treating apparatus of claim 2 , wherein the reinforcement film is provided as a multilayer.4. The substrate treating apparatus of claim 3 , wherein at least one layer of the multilayer is formed of a silicon material.5. The substrate treating apparatus of claim 1 , wherein the dielectric substance ...

COMPOSITE CHARGED PARTICLE BEAM APPARATUS AND THIN SAMPLE PROCESSING METHOD

A composite charged particle beam apparatus includes: a FIB column irradiating a thin sample with FIB; a GIB column irradiating the thin sample with GIB; a sample stage on which the thin sample is placed; a first tilt unit for tilting the thin sample about a first tilt axis of the sample stage, the first tilt axis being orthogonal to an FIB irradiation axis and being located inside a first plane formed by the FIB irradiation axis and a GIB irradiation axis; and a second tilt unit for tilting the thin sample about an axis which is orthogonal to the FIB irradiation axis and the first tilt axis. 1. A composite charged particle beam apparatus , comprising:a first charged particle beam column configured to irradiate a thin sample with a first charged particle beam;a second charged particle beam column configured to irradiate an irradiation position of the first charged particle beam of the thin sample with a second charged particle beam;a sample stage on which the thin sample is placed;a first tilt unit configured to tilt the thin sample about a first tilt axis of the sample stage, the first tilt axis being orthogonal to an irradiation axis of the first charged particle beam column and being located inside a plane formed by the irradiation axis of the first charged particle beam column and the irradiation axis of the second charged particle beam column; anda second tilt unit configured to tilt the thin sample about an axis orthogonal to the irradiation axis of the first charged particle beam column and the first tilt axis.2. The composite charged particle beam apparatus according to claim 1 ,wherein the second tilt unit is a tilt sample holder configured to fix the thin sample such that a cross-sectional surface of the thin sample is tilted at a constant angle with respect to a direction of the irradiation axis of the second charged particle beam.3. The composite charged particle beam apparatus according to claim 2 ,wherein the tilt sample holder is attachable to and ...

Semiconductor Evaluation Device and Computer Program

The present invention provides a semiconductor evaluation device for fabricating a suitable reference pattern utilized in comparison tests. The semiconductor evaluation device and computer program extract a process window in a more accurate range based on a two-dimensional evaluation of the pattern. In order to achieve the above described objects, the present invention includes a semiconductor evaluation device that measures the dimensions of the pattern formed over the sample based on a signal obtained by way of a charged particle beam device, selects a pattern whose dimensional measurement results satisfy specified conditions or exposure conditions when the pattern is formed, and forms synthesized contour data, by synthesizing contour data obtained from images of an identically shaped pattern in design data, and also a pattern formed under the selected exposure conditions or a pattern having a positional relation that is already known relative to the selected pattern.

Charged Particle Beam Apparatus

In a charged particle beam apparatus that applies a retarding voltage to a sample through a contact terminal and executes measurement or inspection of a surface of the sample, potential variation of the sample when changing the retarding voltage applied to the contact terminal is measured by a surface potential meter, a time constant of the potential variation of the sample is obtained, and it is determined whether execution of measurement or inspection by a charged particle beam continues or stops based on the time constant, or a conduction ensuring process between the sample and the contact terminal is executed. 1. A charged particle beam apparatus comprising:an objective lens for focusing a charged particle beam emitted from a charged particle source;a sample stand for mounting a sample to which a charged particle beam focused by the objective lens is applied;a voltage applying power supply for applying a voltage to the sample; anda control device for controlling the objective lens and the voltage applying power supply,wherein after the voltage is applied from the voltage applying power supply to the sample, the control device measures a surface potential of the sample after a predetermined period of time, a change in the surface potential of the sample after the voltage is applied, or a time constant, and executes focus adjustment of the charged particle beam based on the adjustment of the voltage applying power supply if the surface potential of the sample after the predetermined period of time, information of a change in the surface potential of the sample after the voltage is applied, or the time constant satisfies predetermined conditions.2. The charged particle beam apparatus according to claim 1 ,wherein the control device measures the surface potential of the sample after the predetermined period of time, the change in the surface potential of the sample after the voltage is applied, or the time constant, and stops measurement or inspection using the ...

PLASMA PROCESSING APPARATUS

A plasma processing apparatus capable of optimizing a plasma process is provided. The plasma processing apparatus includes a control unit for controlling a minimum energy and a maximum energy of ions incident onto a substrate independently of each other such that ion energy of the ions are concentrated at a first energy band and a second energy band respectively. In the plasma processing apparatus, the oxide film is etched to form a hole within the oxide film, the first energy band is lower than a first energy value at which the oxide film is etched while the organic film is not etched, and the second energy band is higher than a second energy value at which an etching yield at an inclined surface of the hole is higher than an etching yield of an upper surface of the organic film. 1. A plasma processing apparatus comprising:an evacuable processing chamber for accommodating a target substrate having thereon an oxide film and an organic film and for loading/unloading the substrate;a processing gas supply unit for supplying a processing gas into the processing chamber;a plasma generation unit for generating plasma of the processing gas within the processing chamber;a first electrode for mounting and holding the substrate thereon within the processing chamber;a first high frequency power supply unit for applying to the first electrode a first high frequency power having a first frequency in order to attract ions from the plasma toward the substrate on the first electrode;a second high frequency power supply unit for applying to the first electrode a second high frequency power having a second frequency higher than the first frequency in order to attract ions from the plasma toward the substrate on the first electrode; anda control unit for controlling a minimum energy and a maximum energy of the ions incident onto the substrate independently of each other such that ion energy of the ions are concentrated at a first energy band and a second energy band respectively, ...

FLUORINATED COMPOSITIONS FOR ION SOURCE PERFORMANCE IMPROVEMENTS IN NITROGEN ION IMPLANTATION

Compositions, methods, and apparatus are described for carrying out nitrogen ion implantation, which avoid the incidence of severe glitching when the nitrogen ion implantation is followed by another ion implantation operation susceptible to glitching, e.g., implantation of arsenic and/or phosphorus ionic species. The nitrogen ion implantation operation is advantageously conducted with a nitrogen ion implantation composition introduced to or formed in the ion source chamber of the ion implantation system, wherein the nitrogen ion implantation composition includes nitrogen (N) dopant gas and a glitching-suppressing gas including one or more selected from the group consisting of NF, NF, F, SiF, WF, PF, PF, AsF, AsF, CFand other fluorinated hydrocarbons of CF(x≥1, y≥1) general formula, SF, HF, COF, OF, BF, BF, GeF, XeF, O, NO, NO, NO, NO, and O, and optionally hydrogen-containing gas, e.g., hydrogen-containing gas including one or more selected from the group consisting of H, NH, NH, BH, AsH, PH, SiH, SiH, HS, HSe, CHand other hydrocarbons of CH(x≥1, y≥1) general formula and GeH. 1. A nitrogen ion implantation composition comprising:{'sub': '2', 'a dopant gas comprising N; and'}{'sub': 3', '2', '4', '2', '2', '2', '4, 'a glitching-suppressing gas comprising at least one of NF, NF, NO, NO, NO, NO, or any combination thereof;'}wherein the dopant gas and the glitching-suppressing gas are present in an amount sufficient to reduce formation of nitrides on a surface of a nitrogen ion implantation system, as compared to a composition that does not comprise the glitching-suppressing gas.2. The nitrogen ion implantation composition of claim 1 , wherein the dopant gas is present in amount of 50% or greater by volume based on a total volume of the nitrogen ion implantation composition.3. The nitrogen ion implantation composition of claim 1 , wherein the glitching-suppressing gas is present in an amount of 1% to 49% by volume based on a total volume of the nitrogen ion implantation ...

SUBSTRATE PROCESSING METHOD

Examples of a substrate processing method include subjecting a substrate placed on a susceptor to plasma processing, applying power to an RF electrode facing the susceptor for only a predetermined static electricity removal time to generate plasma, thereby reducing an amount of charge of the substrate, measuring a self-bias voltage of the RF electrode while susceptor pins are made to protrude from a top surface of the susceptor and lift up the substrate, and by a controller, shortening the static electricity removal time when the self-bias voltage has a positive value, and lengthening the static electricity removal time when the self-bias voltage has a negative value. 1. A substrate processing method comprising:subjecting a substrate placed on a susceptor to plasma processing;applying power to an RF electrode facing the susceptor for only a predetermined static electricity removal time to generate plasma, thereby reducing an amount of charge of the substrate;measuring a self-bias voltage of the RF electrode while susceptor pins are made to protrude from a top surface of the susceptor and lift up the substrate; andby a controller, shortening the static electricity removal time when the self-bias voltage has a positive value, and lengthening the static electricity removal time when the self-bias voltage has a negative value.2. The substrate processing method according to claim 1 , wherein the static electricity removal time includes:a first time for which power is applied to the RF electrode to generate plasma;a second time for which power to be applied to the RF electrode is decreased at a predetermined first rate after the first time has elapsed; anda third time for which the power to be applied to the RF electrode is decreased down to 0 at a predetermined second rate after the second time has elapsed.3. The substrate processing method according to claim 2 , wherein the controller shortens the second time when the self-bias voltage has a positive value claim 2 , and ...

GATE VALVE

A gate valve includes: a plate having an opening portion ; a plate located opposite to the plate ; a guide space formed between the plates ; and a plate provided in the space . The plate is slidable along a direction in which an opening portion is offset from the opening portion in the space in a state in which the plate is pressed by the pressing portion and separated from the plate , and a position of the plate is fixed with respect to the plate in the space in a state in which the plate is pressed by the pressing portion and is in contact with the plate . The pressing portions each have a bellows structure formed by diffusion-bonding metal plates and to each other. 1. A gate valve , comprising:a first plate having a first opening portion;a second plate having a second opening portion and located opposite to the first plate;a valve body guide space formed between the first plate and the second plate; anda valve body plate provided in the valve body guide space and having a valve body opening portion, wherein:the first plate has a first pressing portion provided thereon, the first pressing portion pressing the valve body plate in a direction away from the first plate;the second plate has a second pressing portion provided thereon, the second pressing portion pressing the valve body plate in a direction toward the first plate;the valve body plate is slidable along a direction in which the valve body opening portion is offset from the first opening portion in the valve body guide space in a state in which the valve body plate is pressed by the first pressing portion and separated from the first plate;a position of the valve body plate is fixed with respect to the first plate in the valve body guide space in a state in which the valve body plate is pressed by the second pressing portion and is in contact with the first plate; andthe first pressing portion and the second pressing portion each have a bellows structure formed by diffusion-bonding a plurality of thin ...

SUBSTRATE TREATING APPARATUS, ION IMPLANTATION APPARATUS, AND ION IMPLANTATION METHOD

An apparatus for treating a substrate includes a process chamber that performs a liquid treatment process by dispensing a treatment liquid onto the substrate, and components provided in the process chamber. A surface of at least one of the components is formed of a material containing an ion-implanted fluorine resin. 1. An apparatus for treating a substrate , the apparatus comprising:a process chamber configured to perform a liquid treatment process by dispensing a treatment liquid onto the substrate; andwherein the process chamber includes a plurality of components which are touched by the treatment liquid, andwherein at least one of the plurality of components includes fluorine resin and has a surface implanted with ions.2. The apparatus of claim 1 ,wherein the apparatus further comprises:a treatment vessel provided in a container shape that is open at the top of the container shape, the treatment vessel having a treatment space in which the substrate is treated, andwherein the treatment vessel is one of the plurality of components.3. The apparatus of claim 2 , further comprising:a lifting unit configured to move the treatment vessel in an up/down direction, the lifting unit being grounded,wherein the treatment vessel is electrically connected to the lifting unit.4. The apparatus of claim 3 ,wherein the treatment vessel includes:a sidewall portion coupled to the lifting unit; andan inclined portion extending upwardly in an inclined direction from an upper end of the sidewall portion, andwherein a first number of implanted ions per unit area at a surface of the inclined portion and a second number of implanted ions per unit area at a surface of the sidewall portion differ from each other.5. The apparatus of claim 4 ,wherein the first number is less than the second number.6. The apparatus of claim 1 ,wherein the apparatus further comprises:a support plate configured to support the substrate in the process chamber; anda chuck pin installed on the support plate and ...

STRUCTURE ELECTRON BEAM INSPECTION SYSTEM FOR INSPECTING EXTREME ULTRAVIOLET MASK AND STRUCTURE FOR DISCHARGING EXTREME ULTRAVIOLET MASK

A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded. 1. An apparatus for discharging extreme ultraviolet mask (EUV mask) when said EUV mask is inspected by using a charged particle beam inspection tool , comprising:means for conducting charge on an EUV mask while inspecting said EUV mask by using the charged particle beam inspection system having a detector for receiving signal electron emanating from said EUV mask; anda grounding pin for conducting charge on said EUV mask along with said means for conducting charge;wherein charge on said EUV mask is grounded through said means for conducting charge and said grounding pin when said grounding pin moves from a first position to a second position for conducting charge on said EUV mask without damaging said EUV mask.2. The apparatus for discharging EUV mask when said EUV mask is inspected by using a charged particle beam inspection tool according to claim 1 , wherein said means for conducting charges comprises a first conductive layer on a first side of said EUV mask.3. The apparatus for discharging EUV mask when said EUV mask is inspected by using a charged particle beam inspection tool according to claim 2 , wherein said grounding pin moves from said first position to said second position to contact said first conductive layer.4. The apparatus for discharging EUV mask when said EUV mask is inspected by using a charged particle beam inspection tool according to claim 2 , wherein said EUV mask has a first trench or notch claim 2 , and said first ...

System and Method for Controlling Charge-up in an Electron Beam Apparatus

The present invention provides means and corresponding embodiments to control charge-up in an electron beam apparatus, which can eliminate the positive charges soon after being generated on the sample surface within a frame cycle of imaging scanning. The means are to let some or all of secondary electrons emitted from the sample surface return back to neutralize positive charges built up thereon so as to reach a charge balance within a limited time period. The embodiments use control electrodes to generate retarding fields to reflect some of secondary electrons with low kinetic energies back to the sample surface.

PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

A plasma processing apparatus includes a processing chamber; a conductive base within the processing chamber; an electrostatic chuck, having an electrode, provided on the base; a high frequency power supply that applies a high frequency power to the base; a first DC power supply that applies a DC voltage to the electrostatic chuck; and a plasma generation unit that generates plasma of a processing gas within the processing chamber. A plasma processing method performed in the plasma processing apparatus includes connecting the first DC power supply to the electrode of the electrostatic chuck; cutting off connection between the first DC power supply and the electrode of the electrostatic chuck; and generating the plasma within the processing chamber by applying the high frequency power to the base in a state that the connection between the first DC power supply and the electrode of the electrostatic chuck is cut off. 1. A plasma processing method performed in a plasma processing apparatus ,wherein the plasma processing apparatus comprises:a processing chamber;a conductive base provided within the processing chamber;an electrostatic chuck, having an electrode, provided on the base;a high frequency power supply configured to apply a high frequency power to the base;a first DC power supply configured to apply a DC voltage to the electrostatic chuck; anda plasma generation unit configured to generate plasma of a processing gas within the processing chamber, andwherein the plasma processing method comprises:connecting the first DC power supply to the electrode of the electrostatic chuck;cutting off connection between the first DC power supply and the electrode of the electrostatic chuck; andgenerating the plasma within the processing chamber by applying the high frequency power to the base from the high frequency power supply in a state that the connection between the first DC power supply and the electrode of the electrostatic chuck is cut off.2. The plasma processing ...

ION Implantation with Charge and Direction Control

The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.

COUPLING FOR CONNECTING ANALYTICAL SYSTEMS WITH VIBRATIONAL ISOLATION

A coupling for connecting together vacuum-based analytical systems requiring to be vibrationally isolated, comprising: a tubular connector having a longitudinal axis, the connector comprising a first end for connection to a first analytical system and a flexible portion reducing transmission of vibrations and permitting displacement of the first analytical system in a direction transverse to the longitudinal axis of the connector; and a seal longitudinally separated from the flexible portion, for vacuum sealing between the connector and a second analytical system; wherein the connector contains ion optics for transmitting ions between the first and second analytical systems. 1. A coupling for connecting together vacuum-based analytical systems requiring to be vibrationally isolated , comprising:a tubular connector having a longitudinal axis, the connector comprising a first end for connection to a first analytical system and a flexible portion for reducing transmission of vibrations and permitting displacement of the first analytical system in a direction transverse to the longitudinal axis of the connector; anda seal longitudinally separated from the flexible portion, for vacuum sealing between the connector and a second analytical system;wherein the connector contains ion optics for transmitting ions between the first and second analytical systems.2. A coupling according to claim 1 , wherein the flexible portion is located at or near the first end of the connector.3. A coupling according to claim 1 , wherein the flexible portion is a bellows.4. A coupling according claim 1 , wherein the seal is located at or near a second end of the connector opposite from the first end.5. A coupling according to claim 1 , wherein the seal is for sealing between atmospheric pressure outside the analytical systems and a high or ultra-high vacuum inside the analytical systems.6. A coupling according to claim 5 , wherein the seal comprises a first seal and a second seal claim 5 , the ...

Conductive Contact Point Pin and Charged Particle Beam Apparatus

A conductive contact point pin includes a pin body, and a plurality of convex portions formed in a tip portion of the pin body, wherein the conductive contact point pin breaks, by pressing a substrate where a film to be broken is formed on a conductive film from above the film to be broken, the film to be broken in order to be electrically connected to the conductive film. 1. A conductive contact point pin comprising:a pin body; anda plurality of convex portions formed in a tip portion of the pin body, whereinthe conductive contact point pin breaks, by pressing a substrate where a film to be broken is formed on a conductive film from above the film to be broken, the film to be broken in order to be electrically connected to the conductive film.2. The conductive contact point pin according to claim 1 , wherein a height dimension of the plurality of convex portions is formed to be longer than a film thickness of the film to be broken.3. The conductive contact point pin according to claim 1 ,{'sub': '2', 'wherein the film to be broken includes chromic oxide (CrO), and'}an interspace between adjacent convex portions of the plurality of convex portions is formed to be equal to or greater than 1.3 μm.4. The conductive contact point pin according to claim 1 , wherein one of a chromium (Cr) film and a tungsten (W) film is used as the conductive film.5. The conductive contact point pin according to claim 1 , wherein one of a semiconductor substrate and an exposure mask substrates is used as the substrate.6. The conductive contact point pin according to claim 1 , wherein each of the plurality of convex portions includes sides forming a tip top surface.7. The conductive contact point pin according to claim 6 , wherein a shape of the each of the plurality of the convex portions is one of a cylindrical shape claim 6 , triangular prismatic shape claim 6 , quadrangular prismatic shape claim 6 , pentagonal prismatic shape claim 6 , hexagonal prismatic shape claim 6 , and other ...

Composite beam apparatus

Disclosed is a composite beam apparatus capable of suppressing the influence of charge build-up, or electric field or magnetic field leakage from an electron beam column when subjecting a sample to cross-section processing with a focused ion beam and then performing finishing processing with another beam. The Composite beam apparatus includes: an electron beam column irradiating an electron beam onto a sample; a focused ion beam column irradiating a focused ion beam onto the sample to form a cross section; a neutral particle beam column having an acceleration voltage set lower than that of the focused ion beam column, and irradiating a neutral particle beam onto the sample to perform finish processing of the cross section, wherein the electron beam column, the focused ion beam column, and the neutral particle beam column are arranged such that the beams of the columns cross each other at an irradiation point.

Phase Plate and Method of Fabricating Same

A method of fabricating a phase plate, for use in a transmission electron microscope, with simple process steps is offered. The method includes a step (S) of forming a first layer on a substrate, a step (S) of patterning the first layer to form through-holes extending through the first layer, a step (S) of etching the surface of the substrate opposite to the surface on which the first layer is formed to form an opening which is in communication with the through-holes and which exposes the first layer, and a step (S) of forming a second layer on the first layer. 1. A method of fabricating a phase plate for use in a transmission electron microscope , comprising the steps of:forming a first layer on a substrate;patterning the first layer to form through-holes extending through the first layer;etching a surface of the substrate opposite to a surface on which the first layer is foamed to form an opening which is in communication with the through-holes and which exposes the first layer; andforming a second layer on the first layer.2. The method of fabricating a phase plate as set forth in claim 1 , further comprising a step of forming a third layer on a surface of said first layer opposite to a surface on which said second layer is formed.3. The method of fabricating a phase plate as set forth in claim 2 , wherein during said step of forming the third layer claim 2 , the third layer is formed also on a surface of said substrate opposite to a surface on which said first layer is formed.4. The method of fabricating a phase plate as set forth in claim 1 , wherein said step of forming the second layer is followed by a step of removing a region of said first layer in registry with said opening.5. The method of fabricating a phase plate as set forth in claim 4 , further comprising a step of forming the third layer on a surface of said second layer which is on a side of said first layer.6. The method of fabricating a phase plate as set forth in claim 1 , wherein said step of ...

SEMICONDUCTOR PROCESSING APPARATUS AND PRE-CLEAN SYSTEM

A semiconductor processing apparatus includes an electromagnetic generator, an analog signal module, and an electromagnetic shield. The electromagnetic generator is capable of generating an electromagnetic field. The analog signal module is located adjacent to the electromagnetic generator and capable of generating an analog signal. The electromagnetic shield is capable of shielding the analog signal module. The electromagnetic shield includes a plurality of covering plates. Each of the covering plates and the analog signal module are apart from at least a predetermined distance. 1. A semiconductor processing apparatus comprising:an electromagnetic generator configured to generate an electromagnetic field;an analog signal module located adjacent to the electromagnetic generator and configured to generate an analog signal; andan electromagnetic shield configured to shield the analog signal module, the electromagnetic shield comprising a plurality of covering plates, wherein each of the covering plates and the analog signal module are apart from at least a predetermined distance.2. The semiconductor processing apparatus of claim 1 , wherein the predetermined distance is equal to or larger than 20 mm.3. The semiconductor processing apparatus of claim 1 , wherein the electromagnetic generator comprises a remote plasma power supply claim 1 , a radio-frequency power supply claim 1 , or an electric magnet.4. The semiconductor processing apparatus of claim 1 , wherein the analog signal module comprises a gauge claim 1 , a controller claim 1 , or a driver.5. The semiconductor processing apparatus of claim 1 , wherein the covering plates entirely seal the analog signal module.6. The semiconductor processing apparatus of claim 1 , wherein the electromagnetic shield further comprises a fixing bracket fixed to a housing of the electromagnetic generator.7. The semiconductor processing apparatus of claim 1 , wherein the thickness of each of the covering plates is equal to or ...

Multi-electrode cooling arrangement

The invention relates to a collimator electrode, comprising an electrode body ( 81 ) that is provided with a central electrode aperture ( 82 ), wherein the electrode body defines an electrode height between two opposite main surfaces, and wherein the electrode body accommodates a cooling conduit ( 105 ) inside the electrode body for transferring a cooling liquid ( 102 ). The electrode body preferably has a disk shape or an oblate ring shape. The invention further relates to a collimator electrode stack for use in a charged particle beam generator, comprising a first collimator electrode and a second collimator electrode that are each provided with a cooling conduit ( 105 ) for transferring the cooling liquid ( 102 ), and a connecting conduit ( 110 ) for a liquid connection between the cooling conduits of the first and second collimator electrodes.

MULTIPLE GAS INJECTION SYSTEM

A multi-positional valve is used to control the destination of gas flows from multiple gas sources. In one valve position the gases flow to an isolated vacuum system where the flow rate and mixture can be adjusted prior to introduction into a sample vacuum chamber. In another valve position the pre-mixed gases flow from the isolated vacuum chamber and through a needle into the sample vacuum chamber. 117-. (canceled)18. A method of providing a first gas to a surface of a work piece in a system that uses a beam to process the work piece in the presence of the first gas , the system including a first gas source for providing the first gas , a beam source for providing the beam , and a needle for injecting the first gas from the first gas source to the work piece , the method comprising:causing the first gas to flow along a first path from the first gas source to a valve;establishing a first desired flow rate for the first gas by adjusting the gas flow rate of The first gas while the valve is configured to divert the first gas to a second path that does not lead to the needle; andafter the first desired flow rate is established, directing the first gas to the needle to provide the first gas to the surface of the work piece at the first desired flow rate.19. The method of in which establishing the first desired flow rate includes establishing a desired flow rate of the first gas while the valve is configured to divert the first gas to a variable speed vacuum pump.20. The method of in which establishing the first desired flow rate includes obtaining measurements of the gas flow in the second path.21. The method of further comprising claim 18 , before directing the First gas to the needle:causing a second gas to flow from a second gas source to the valve; andestablishing a second desired gas flow rate for the second gas.22. The method of in which establishing the second desired flow rate for the second gas includes:measuring the flow of the first gas in the second path; ...

BIASED COVER RING FOR A SUBSTRATE PROCESSING SYSTEM

Apparatus and methods for reducing and eliminating accumulation of excessive charged particles from substrate processing systems are provided herein. In some embodiments a process kit for a substrate process chamber includes: a cover ring having a body and a lip extending radially inward from the body, wherein the body has a bottom, a first wall, and a second wall, and wherein a first channel is formed between the second wall and the lip; a grounded shield having a lower inwardly extending ledge that terminates in an upwardly extending portion configured to interface with the first channel of the cover ring; and a bias power receiver coupled to the body and extending through an opening in the grounded shield. 1. A process kit for a substrate process chamber , comprising:a cover ring having a body and a lip extending radially inward from the body, wherein the body has a bottom, a first wall, and a second wall, and wherein a first channel is formed between the second wall and the lip;a grounded shield having a lower inwardly extending ledge that terminates in an upwardly extending portion configured to interface with the first channel of the cover ring; anda bias power receiver coupled to the body and extending through an opening in the grounded shield.2. The process kit of claim 1 , further comprising a dielectric housing disposed about the bias power receiver and through a base of the grounded shield.3. The process kit of claim 2 , wherein the dielectric housing comprises a plurality of blocks secured together by one or more clamping members.4. The process kit of claim 2 , further comprising a conductive path extending from the body into the dielectric housing to form an electrical connection with the bias power receiver.5. The process kit of claim 4 , wherein the body comprises a first block coupled to the body claim 4 , and wherein the conductive path is disposed between the first block and the body.6. The process kit of claim 5 , further comprising torsional ...

SELF-CLEANING LINEAR IONIZING BAR AND METHODS THEREFOR

A self-cleaning linear ionizer with at least one ionizing electrode, at least one electrode-cleaner, and at least two spool assemblies is disclosed. The electrode has opposing ends and defines an axial working length with a surface that produces an ion cloud and develops degradation products with use. Although the working length of the electrode is stationary, the electrode is movable. The electrode-cleaner is also stationary and selectively engages the electrode along its working length. The opposing ends of the electrode are fixed to the opposing spool assemblies which selectively move the ionizing electrode such that the electrode-cleaner removes at least some of the surface degradation products from the electrode during movement. Methods of using the disclosed ionizer have self-cleaning and ionization modes of operation, which may occur cyclically, alternately, or simultaneously, are also disclosed. 1. A self-cleaning linear ionizer comprising:at least one flexible and movable ionizing electrode that defines an axis along a stationary linear working length thereof, the electrode establishing a linear ion cloud along the working length thereof in response to the application of an ionizing signal to the electrode;at least one stationary electrode-cleaner that may selectively engage the movable electrode along the linear working length thereof;means for applying an ionizing signal to the electrode to thereby establish the linear ion cloud, wherein the working length of the electrode has a surface that develops degradation products in response to the application of the ionizing signal;means for moving the electrode along the axial working length thereof such that the electrode-cleaner removes at least some of the surface degradation products from the electrode during movement; andmeans for tensioning the electrode on the means for moving such that a substantially constant tensional force is maintained on the electrode.2. The self-cleaning linear ionizer of further ...

ELECTRON GUN ARRANGEMENT

A gun arrangement configured for generating a primary electron beam for a wafer imaging system is described. The arrangement includes a controller configured for switching between a normal operation and a cleaning operation, a field emitter having an emitter tip adapted for providing electrons and emitting an electron beam along an optical axis, an extractor electrode adapted for extracting the electron beam from the emitter tip electrode, a suppressor electrode, and at least one auxiliary emitter electrode arranged radially outside the suppressor electrode, and provided as a thermal electron emitter for thermally emitting electrons towards the optical axis. 1. A gun arrangement configured for generating a primary electron beam for a wafer imaging system , comprising:a controller configured for switching between normal operation and cleaning operation; a cold field emitter and a thermally assisted cold field emitter, and wherein the emitter is electrically connected to the controller; and', 'an extractor electrode adapted for extracting the electron beam from the emitter tip electrode;, 'a field emitter having an emitter tip adapted for providing electrons and emitting an electron beam along an optical axis, wherein the field emitter is selected from the group consisting ofa suppressor electrode arranged, with respect to the optical axis, radially outside the emitter, wherein at least one of the suppressor electrode and the extractor electrode is electrically connected to the controller such that the suppressor electrode is at a first potential relative to the extractor electrode during normal operation and at a second, negative potential relative to the extractor electrode during cleaning operation; andat least one auxiliary emitter electrode arranged, with respect to the optical axis, radially outside the suppressor electrode, and provided as a thermal electron emitter for thermally emitting electrons towards the optical axis.2. The arrangement according to claim ...

ELECTRICAL CHARGE REGULATION FOR A SEMICONDUCTOR SUBSTRATE DURING CHARGED PARTICLE BEAM PROCESSING

A method for preparing a semiconductor target (), the method comprising providing a semiconductor substrate () including a main substrate surface () which defines a substrate periphery () along an outer edge. The semiconductor substrate () further has an structure layer () arranged on the main substrate surface, and comprising a structure layer periphery () that is located inwards with respect to the substrate periphery, so as to leave exposed a peripheral substrate region () along the substrate periphery. The method further comprises applying an electrically conductive layer () on the structure layer, wherein the electrically conductive layer extends beyond the structure layer periphery to establish electrical contact in a contacting portion () of the peripheral substrate region. 21218142038. Method according to claim 1 , wherein the semiconductor substrate () comprises a lateral substrate surface () which borders on the main substrate surface () and which delineates the substrate periphery () claim 1 , and wherein applying the electrically conductive layer () on the semiconductor substrate and the structure layer comprises:{'b': 38', '18, 'extending the electrically conductive layer () towards the lateral substrate surface () to form an electrical contact with at least a portion of the lateral substrate surface.'}330363812. Method according to or claim 1 , wherein the structure layer () comprises a cover layer () claim 1 , and wherein applying the electrically conductive layer () on the semiconductor substrate () and the structure layer comprises:{'b': '36', 'applying the electrically conductive layer directly onto the cover layer ().'}43383820126010. Method according to any one of the - claims 1 , wherein the electrically conductive layer () is applied for establishing an electrically conductive path through the conductive layer () and towards the substrate periphery () claims 1 , allowing a net electrical charge claims 1 , when received by the substrate surface ...

CALIBRATING METHOD AND CALIBRATING SYSTEM

A calibrating method is provided including the following steps. A type of a first sensor and a type of a first sensor carrier are determined according to an external shape of a first object. The first sensor is carried by the first sensor carrier, and a relative coordinate of the first object is measured by the first sensor. The relative coordinate of the first object is compared with a predetermined coordinate of the first object to obtain a first object coordinate error, and the first object coordinate error is corrected. After the first object coordinate error is corrected, the first object is driven to perform an operation on a second object or the second object is driven to perform the operation on the first object. A calibrating system is also provided. 1. A calibrating method comprising:determining a type of a first sensor and a type of a first sensor carrier according to an external shape of a first object;carrying the first sensor by the first sensor carrier, and measuring a first object actual coordinate of the first object by the first sensor;comparing the first object actual coordinate with a first object predetermined coordinate to obtain a first object coordinate error, and correcting the first object coordinate error; andafter correcting the first object coordinate error, driving one of the first object and a second object to perform an operation on the other of the first object and the second object.2. The calibrating method as claimed in claim 1 , wherein the first object actual coordinate is a coordinate of the first object relative to a robot.3. The calibrating method as claimed in claim 2 , wherein determining the type of the first sensor carrier comprises:determining the first sensor carrier to be the robot according to the external shape of the first object.4. The calibrating method as claimed in claim 2 , wherein the first object is mounted on one of the robot and a working platform claim 2 , and the first sensor and the second object are ...

PLASMA-BASED MATERIAL MODIFICATION WITH NEUTRAL BEAM

Systems and processes for plasma-based material modification of a work piece are provided. In an example process, a first plasma in a plasma source chamber is generated. A magnetic field is generated using a plurality of magnets. The magnetic field confines electrons of the first plasma having energy greater than 10 eV within the plasma source chamber. A second plasma is generated in a process chamber coupled to the plasma source chamber. An ion beam is generated in the process chamber by extracting ions from the first plasma through the plurality of magnets. The ion beam travels through the second plasma and is neutralized by the second plasma to generate a neutral beam. The work piece is positioned in the process chamber such that the neutral beam treats a surface of the work piece. 1. A method for plasma-based material modification of a work piece , the method comprising:generating a first plasma in a plasma source chamber;generating, using a plurality of magnets, a magnetic field that confines within the plasma source chamber, electrons of the first plasma having energy greater than 10 eV;generating a second plasma in a process chamber coupled to the plasma source chamber;generating an ion beam in the process chamber by extracting ions from the first plasma through the plurality of magnets, wherein the ion beam is neutralized to generate a neutral beam as the ion beam travels through the second plasma; andpositioning the work piece in the process chamber such that the neutral beam treats a surface of the work piece.2. The method of claim 1 , wherein the ion beam is neutralized by electrons of the second plasma.3. The method of claim 1 , wherein the second plasma includes ions from the first plasma.4. The method of claim 1 , wherein the first plasma is generated from a process gas and the second plasma is generated from an additive gas.5. The method of claim 1 , wherein a cross-section of the neutral beam has a diameter that is greater than a diameter of the work ...

MASK COVER, CHARGED PARTICLE BEAM DRAWING APPARATUS AND CHARGED PARTICLE BEAM DRAWING METHOD

A mask cover according to one embodiment of the present invention comprises a frame body having an opening at the center, a conductive earth plate installed on the frame body such that its end protrudes into the opening of the frame body, an earth pin provided on the end of the earth plate and electrically connected to the earth plate, and a conductive cover part surrounding the earth pin such that the tip end of the earth pin protrudes and a gap is present between the cover part and the earth pin. 1. A mask cover comprising:a frame body having an opening at the center,a conductive earth plate installed on the frame body such that its end protrudes into the opening of the frame body,an earth pin provided at the end of the earth plate and electrically connected to the earth plate, anda conductive cover part surrounding the earth pin such that the tip end of the earth pin protrudes and a gap is present between the cover part and the earth pin.2. The mask cover according to claim 1 , wherein the earth plate and the cover part are made of any of ZrO—TiN claim 1 , SiC claim 1 , WC and TiC.3. The mask cover according to claim 1 , wherein the gap between the earth pin and the cover part is wider toward the tip end of the earth pin.4. The mask cover according to claim 1 , further comprising a conductive support pin electrically connected to the earth plate and supporting the earth plate.5. The mask cover according to claim 1 , wherein the frame body is such that a conductive film is formed on a surface of a low magnetic material made of any of AlO claim 1 , ZrOand SiC.6. The mask cover according to claim 5 , wherein the conductive film is made of TiN.7. A charged particle beam drawing apparatus comprising:a first chamber for placing, on a mask in which a resist film is formed on a light shielding film, a mask cover having a frame body with an opening at the center, a conductive earth plate installed on the frame body such that its end protrudes into the opening of the frame ...

APPARATUS CONFIGURED FOR ENHANCED VACUUM ULTRAVIOLET (VUV) SPECTRAL RADIANT FLUX AND SYSTEM HAVING THE APPARATUS

A charge control apparatus for controlling charge on a substrate in a vacuum chamber is described. The apparatus includes a light source emitting a beam of radiation having a divergence; a mirror configured to reflect the beam of radiation, wherein a curvature of a mirror surface of the curved mirror is configured to reduce the divergence of the beam of radiation; and a mirror support configured to rotatably support the curved mirror, wherein a rotation of the mirror varies the direction of the beam of radiation. 1. A charge control apparatus for controlling charge on a large area substrate in a vacuum chamber , comprising:a light source emitting a beam of radiation having a divergence;a mirror configured to reflect the beam of radiation, wherein a curvature of a mirror surface of the mirror is configured to reduce the divergence of the beam of radiation to substantially collimate the reflected beam of radiation; anda mirror support configured to rotatably support the curved mirror, wherein a rotation of the mirror varies a direction of the reflected beam of radiation to sweep over the large area substrate for reducing charges.2. The charge control apparatus according to claim 1 , wherein the mirror is a parabolic mirror having a focal point.3. The charge control apparatus according to claim 2 , wherein the parabolic mirror is an off-axis parabolic mirror.4. The charge control apparatus according to claim 2 , wherein the light source and the mirror are arranged with respect to each other such that a crossover of the beam of radiations is provided at the focal point of the parabolic mirror.5. The charge control apparatus according to claim 1 , wherein the mirror support is configured for a rotation of the mirror by at least 90° claim 1 , and wherein the mirror can be rotated in an idle position.6. A charge control apparatus for controlling charge on a substrate in a vacuum chamber claim 1 , comprising:a light source emitting a beam of radiation having a divergence;a ...

Multi-column Electron Beam Inspection that uses custom printing methods

A method of testing for photomask print errors includes dividing a photomask print into sub-regions and inspecting each sub-region with a different (e.g., electron) beam column, each sub-region aligned with a beam column axis during a calibration process. The different sub-regions may be inspected on different photomask prints on a wafer plane. 1. A semiconductor wafer inspection process , comprising:creating an inspection test wafer from a custom arrangement of photomask exposure layout different from a production print layout of a production wafer;inspecting the inspection test wafer for defects using a multi-column electron beam system;processing the inspection test wafer under the same conditions as the production wafer, except that the photolithography exposure step is modified to create an arrangement of photomask prints on the inspection test wafer plane to allocate and align sub-regions of each photomask print to a different beam columns; andinspecting one of sub-regions in repeated photomask prints on the wafer plane using a different column of the multi-column electron beam system.2. The process of claim 1 , where the sub-regions within the coordinate of a photomask print are offset from one another both in the x and y dimensions on the wafer plane by determined amounts.3. The process of claim 1 , wherein the physical multi-column beam axis positions are first calibrated using a calibration wafer to obtain each beam axis' wafer coordinates claim 1 , which includes designed hardware arrangements claim 1 , mechanical errors claim 1 , and assembly tolerances.4. The process of claim 1 , wherein if a beam column fails over time claim 1 , the photomask print is re-generated and re-divided into a different number of sub-regions so that complete photomask print defect information continues to be inspected collectively and entirely by the remaining working beam columns.5. The process of claim 1 , wherein if a beam column fails over time claim 1 , follow-up ...

PLASMA BRIDGE NEUTRALIZER FOR ION BEAM ETCHING

An ion beam neutralization system, often referred to as a plasma bridge neutralizer (PBN), as part of an ion beam (etch) system. The system utilizes an improved filament thermo-electron emitter PBN design, that when utilized in a particular method of operation, greatly extends filament life and minimizes variation in neutralizer operating parameters for long periods of operation. The PBN includes a solenoidal electromagnetic that produces an axial magnetic field within the PBN and a magnetic concentrator that facilitates the alignment of the magnetic field and inhibits stray fields. The PBN can readily provide a filament lifetime of at least 500 hours. 1. A broad ion beam system comprising:an ion beam generator for providing a beam of ions; and 'a plasma generation chamber operably connected to a chamber power source, the chamber having an interior volume defined by a wall structure and a floor structure having a entered chamber discharge orifice for extracting the electrons from the PBN chamber as low energy electrons;', 'a plasma bridge neutralizer (PBN) for generating low energy electrons, comprisingan inert gas source operably connected to the interior volume;a thermo-emitting cathode filament within the interior volume and operably connected to a filament power source;a magnetic field generator configured to generate a magnetic field within the chamber parallel to an axis of the PBN; anda magnetic concentrator surrounding the chamber and having an aperture aligned with the chamber discharge orifice, the magnetic concentrator inhibiting the magnetic field from exiting the PBN.2. The broad ion beam system of claim 1 , wherein the magnetic field generator is a solenoidal electromagnet.3. The broad ion beam system of claim 1 , wherein the ion beam is a wide ion beam having a diameter of at least 300 mm.4. The broad ion beam system of claim 3 , wherein the ions from the wide ion beam generator are low energy ions.5. The broad ion beam system of claim 4 , wherein the ...

LOW WORK FUNCTION ELECTRON BEAM FILAMENT ASSEMBLY

A filament assembly can include: a button having a planar emitter region with one or more apertures extending from an emission surface of the planar emitter region to an internal surface opposite of the emission surface; an inlet electrical lead coupled to the button at a first side; an outlet electrical lead coupled to the button at a second side opposite of the first side; and a low work function object positioned adjacent to the internal surface of the planar emitter region and retained to the button. The planar emitter region can include a plurality of apertures. The low work function object can include a porous ceramic material having the barium, and may have a polished external surface. An electron gun can include the filament assembly. An additive manufacturing system can include the electron gun having the filament assembly. 1. A filament assembly comprising:a button having a planar emitter region with one or more apertures extending from an emission surface of the planar emitter region to an internal surface opposite of the emission surface;an inlet electrical lead coupled to the button at a first side;an outlet electrical lead coupled to the button at a second side opposite of the first side; anda low work function object positioned adjacent to the internal surface of the planar emitter region and retained to the button.2. The filament assembly of claim 1 , wherein the planar emitter region comprises a plurality of apertures.3. The filament assembly of claim 1 , wherein the low work function object includes barium and is configured to evolve barium therefrom when heated.4. The filament assembly of claim 1 , further comprising a retainer member coupled with the button to form a housing having an internal chamber claim 1 , wherein the low work function object is retained within the internal chamber.5. The filament assembly of claim 4 , wherein at least one of the button or retainer member includes tantalum.6. The filament assembly of claim 1 , further ...

STRUCTURE ELECTRON BEAM INSPECTION SYSTEM FOR INSPECTING EXTREME ULTRAVIOLET MASK AND STRUCTURE FOR DISCHARGING EXTREME ULTRAVIOLET MASK

A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded. 1. An apparatus for discharging extreme ultraviolet mask (EUV mask) when said EUV mask is inspected by using a charged particle beam inspection tool , comprising:means for conducting charge on an EUV mask while inspecting said EUV mask by using the charged particle beam inspection system having a detector for receiving signal electron emanating from said EUV mask; anda grounding pin for conducting charge on said EUV mask along with said means for conducting charge;wherein charge on said EUV mask is grounded through said means for conducting charge and said grounding pin when said grounding pin moves from a first position to a second position for conducting charge.2. The apparatus for discharging EUV mask when said EUV mask is inspected by using a charged particle beam inspection tool according to claim 1 , wherein said means for conducting charges comprises a first conductive layer on a first side of said EUV mask.3. The apparatus for discharging EUV mask when said EUV mask is inspected by using a charged particle beam inspection tool according to claim 2 , wherein said grounding pin moves from said first position to said second position to contact said first conductive layer.4. The apparatus for discharging EUV mask when said EUV mask is inspected by using a charged particle beam inspection tool according to claim 2 , wherein said EUV mask has a first trench or notch claim 2 , and said first conductive layer is on said at said first trench or ...

HIGH TEMPERATURE ELECTROLYSIS GLOW DISCHARGE METHOD

The present invention provides a glow discharge assembly that includes an electrically conductive cylindrical screen, a flange assembly, an electrode, an insulator and a non-conductive granular material. The electrically conductive cylindrical screen has an open end and a closed end. The flange assembly is attached to and electrically connected to the open end of the electrically conductive cylindrical screen. The flange assembly has a hole with a first diameter aligned with a longitudinal axis of the electrically conductive cylindrical screen. The electrode is aligned with the longitudinal axis of the electrically conductive cylindrical screen and extends through the hole of the flange assembly into the electrically conductive cylindrical screen. The insulator seals the hole of the flange assembly around the electrode and maintains a substantially equidistant gap between the electrically conductive cylindrical screen and the electrode. The non-conductive granular material is disposed within the substantially equidistant gap. 131-. (canceled)32. A method for producing a steam comprising the steps of: an electrically conductive cylindrical screen having an open end and a closed end,', 'a flange assembly attached to and electrically connected to the open end of the electrically conductive cylindrical screen, the flange assembly having a hole with a first diameter aligned with a longitudinal axis of the electrically conductive cylindrical screen,', 'an electrode aligned with the longitudinal axis of the electrically conductive cylindrical screen and extending through the hole of the flange assembly into the electrically conductive cylindrical screen, the electrode having a second diameter that is smaller than the first diameter of the hole,', 'an insulator that seals the first hole of the flange assembly around the electrode and maintains a substantially equidistant gap between the electrically conductive cylindrical screen and the electrode,', 'a non-conductive ...

System and Method for Calibrating Charge-Regulating Module

This invention provides a system and a method for calibrating charge-regulation module in vacuum environment. Means for mounting the charge-regulation module provides motions to the charge-regulation module such that a beam spot, illuminated by the charge-regulation module, on a sample surface can be moved to a pre-determined position which is irradiated by a charged particle beam. 1. A system for calibrating a charge-regulating module , comprising:means for mounting a Laser and providing motions to move the Laser, wherein the Laser illuminates a beam on a surface of a sample with a beam spot thereon, and regulates charges on the sample surface;a detector for receiving a reflected beam from the beam spot on the sample surface;a controller, coupled to the detector, for receiving signals from the detector, calculating a position of the beam spot, and controlling the beam spot to a pre-determined location; anda transmission, coupled to the controller, and driving the mounting means such that the beam spot is moved to the pre-determined location.2. The system of claim 1 , wherein the mounting means is fastened to an objective lens of a charged particle beam tool claim 1 , and the pre-determined location is irradiated by a charged particle beam of the charged particle beam tool.3. The system of claim 2 , wherein the charged particle beam tool is an ebeam inspection tool.4. The system of claim 3 , wherein the sample is a wafer or a mask.5. The system of claim 4 , wherein the mounting means includes a first motor for driving the Laser with a rotational motion claim 4 , and a second motor for driving the Laser with a vertical motion.6. The system of claim 5 , wherein the transmission is a hollow rod within wires for providing powers and instructions to the first and second motors.7. The system of claim 4 , wherein the mounting means is a C-shape mount and the Laser is fastened thereto.8. The system of claim 7 , wherein the transmission includes a rotation-to-translation ...

METHOD FOR IMAGING WAFER WITH FOCUSED CHARGED PARTICLE BEAM IN SEMICONDUCTOR FABRICATION

A method for processing a semiconductor wafer is provided. The method includes positioning the semiconductor wafer in a scanning electron microscope (SEM). The method further includes producing images of at least a portion of a test region that is designated on a process surface of the semiconductor wafer. The method also includes adjusting the condition of a charged particle beam of the SEM at a check point selected in the test region. In addition, the method includes producing images of another portion of the test region after the condition of the charged particle beam is adjusted. 1. A method for processing a semiconductor wafer , comprising:positioning the semiconductor wafer in a scanning electron microscope (SEM);producing images of at least a portion of a test region which is designated on a process surface of the semiconductor wafer;adjusting a condition of a charged particle beam of the SEM at a check point in the test region; andproducing images of another portion of the test region after the condition of the charged particle beam is adjusted.2. The method as claimed in claim 1 , wherein the operation of adjusting a charged particle beam condition comprises adjusting a focal point position of the charged particle beam on the test region.3. The method as claimed in claim 1 , wherein the operation of adjusting a charged particle beam condition comprises adjusting an acceleration voltage applied to the charged particle beam.4. The method as claimed in claim 1 , wherein a plurality of check points are selected claim 1 , and the condition of the charged particle beam is adjusted in each of the check points.5. The method as claimed in claim 1 , wherein a plurality of images of the test region are recorded claim 1 , and an area of the test region is in a range from about 0.04 mmto about 5.7 mm.6. The method as claimed in claim 1 , further comprising forming an insulating layer over the process surface of the semiconductor wafer claim 1 , wherein during the period ...

PARTICLE BEAM APPARATUS AND METHOD FOR OPERATING A PARTICLE BEAM APPARATUS

In a particle beam apparatus and a method for operating a particle beam apparatus, the particle beam apparatus has a column having a particle-beam optical system for generating a particle beam, to thereby expose a desired pattern in a vacuum sample chamber in an exposure operation. In a cleaning operation, a regulable gas stream having photodissociatable gas is fed to the column and/or the vacuum sample chamber via a gas-feed system. The photodissociation of the supplied gas is brought about in the cleaning operation with the aid of a plurality of light sources distributed spatially in the column and/or in the vacuum sample chamber. In the cleaning operation, individual light sources are able to be switched on and off selectively with respect to time via a control unit connected to the light sources, in order to clean individual elements in the column and/or in the vacuum sample chamber in targeted fashion. 1. A particle beam apparatus , comprising:a column including a particle-beam optical system adapted to generate a particle beam to expose a desired pattern in a vacuum sample chamber during an exposure operation;a gas-feed system adapted to feed a regulable gas stream having a photodissociatable gas to the column and/or the vacuum sample chamber during a cleaning operation;a plurality of light sources distributed spatially in the column and/or in the vacuum sample chamber and adapted to photodissociate the gas during the cleaning operation; anda control unit connected to the light sources and adapted to selectively switch on and off individual light sources with respect to time during the cleaning operation.2. The particle beam apparatus according to claim 1 , wherein the control unit is operatively connected with an inlet valve of the gas-feed system claim 1 , and is adapted to set claim 1 , in defined manner by acting on the inlet vale claim 1 , a gas pressure in the column and/or in the vacuum sample chamber during the cleaning operation.3. The particle beam ...

A METHOD OF CONTROLLING AN IMPLANTER OPERATING IN PLASMA IMMERSION

A method of controlling an implanter operating in plasma immersion, the method including the steps of: 1. A method of controlling an implanter operating in plasma immersion , the method comprising:an implantation stage during which the plasma is ignited and the substrate is negatively biased;a neutralization stage during which the plasma is ignited and the substrate has a positive or zero bias applied thereto;a suppression stage during which the plasma is extinguished; andan expulsion stage for expelling negatively charged particles from the substrate and during which the plasma is extinguished;the method being characterized in that the duration of said expulsion stage is longer than 5 μs.2. A method according to claim 1 , characterized in that claim 1 , following said expulsion stage claim 1 , it includes a preparation stage during which the plasma is extinguished and the substrate has a positive or negative bias applied thereto.3. A method according to claim 1 , characterized in that claim 1 , during said expulsion stage claim 1 , the substrate is negatively biased.4. A method according to claim 1 , characterized in that said implanter includes a recovery electrode at the periphery of the substrate claim 1 , and during said expulsion stage said electrode is positively biased.5. A method according to claim 1 , characterized in that during said suppression stage claim 1 , the substrate has a positive or negative bias applied thereto.6. A power supply for biasing an implanter claim 1 , the power supply comprising:a first electricity generator having its positive pole connected to ground;a first switch having its first pole connected to the negative pole of said first generator, and having its second pole connected to the output terminal of the power supply; anda second switch having its first pole connected to a compensation terminal, and having its second pole connected to said output terminal;the power supply being characterized in that it includes a third switch ...

Charged-Particle Beam Device

The objective of the present invention is to provide a charged-particle beam device wherein suppressing the effects of static build-up is compatible with executing high-throughput measurements and examination. In order to achieve this objective, proposed is the charged-particle beam device equipped with an electrostatic chuck (), comprising an electrometer () for measuring the electric potential of the electrostatic chuck, a charge removing device () for removing charge from the electrostatic chuck, and a control device () for controlling the charge removing device in such a manner that the charge removal by the charge removing device is executed after reaching a certain number of processed samples irradiated by the charged particle beam, or after a predetermined processing time. When the result of the electric potential measurement by the electrometer does not meet a predetermined condition, the control device executes at least one among increasing and decreasing the number processed or the processing time. 1. A charged-particle beam device equipped with an electrostatic chuck that chucks a sample to be irradiated with a charged particle beam , the charged-particle beam device comprising:an electrometer that measures electric potential of the electrostatic chuck;a charge removing device that removes charge from the electrostatic chuck; anda control device that controls the charge removing device in such a manner that charge removal by the charge removing device is executed after reaching a predetermined processed number of samples irradiated by the charged particle beam, or after a predetermined processing time, whereinthe control device executes at least one among increasing and decreasing the processed number or processing time when a result of electric potential measurement by the electrometer does not meet a predetermined condition.2. The charged-particle beam device according to claim 1 , whereinthe control device executes at least one among increasing and ...

Charged-Particle Beam Device

A charged-particle beam device wherein suppressing the effects of static build-up is compatible with executing high-throughput measurements and examination. The charged-particle beam device equipped with an electrostatic chuck (), includes an electrometer () for measuring the electric potential of the electrostatic chuck, a charge removing device () for removing charge from the electrostatic chuck, and a control device () for controlling the charge removing device in such a manner that the charge removal by the charge removing device is executed after reaching a certain number of processed samples irradiated by the charged particle beam, or after a predetermined processing time. When the result of the electric potential measurement by the electrometer does not meet a predetermined condition, the control device executes at least one among increasing and decreasing the number processed or the processing time. 1. A charged-particle beam device equipped with an electrostatic chuck that chucks a sample to be irradiated with a charged particle beam , the charged-particle beam device comprising:a sample chucking surface of the electrostatic chuck including a first region in which a plurality of projections is formed and a second region in which the number of projections per unit area is larger than that of the first region;an electrometer that measures electric potential of the electrostatic chuck; anda control device that measures electric potential of the second region using the electrometer.2. The charged-particle beam device according to claim 1 , further comprising a charge removing device that removes charge from the electrostatic chuck claim 1 ,wherein the control device controls the charge removing device based on an electric potential measurement result of the second region.3. The charged-particle beam device according to claim 2 , wherein the control device determines whether charge removal by the charge removing device is necessary based on the electric ...

Plasma processing apparatus

(과제) 플라즈마 처리 장치 내에 있어서, 처리 용기의 내면을 보호하면서, 플라즈마가 안정하게 발생되는 것이 가능한 플라즈마 처리 장치를 제공한다. (해결 수단) 이 플라즈마 처리 장치는, 처리 용기(1)와, 처리 용기(1) 내에 배치된 테이블(3)과, 처리 용기(1)에 설치된 유전체 창(16)과, 유전체 창(16) 위에 설치된 슬롯판(20)과, 테이블(3)과 유전체 창(16)의 사이의 처리 공간을 둘러싸는 유전체로 이루어지는 포위체 Q를 구비하되, 슬롯판(20)에 마이크로파를 입력함으로써, 유전체 창(16) 아래에 플라즈마를 발생시켜, 이 플라즈마에 의해, 테이블(3) 위에 배치된 기판(W)에 처리를 행하는 것이며, 포위체 Q와 볼록부(16p)의 사이에 소정의 제 1 간극 G1가 존재한다. (Problem) To provide a plasma processing apparatus capable of stably generating plasma while protecting the inner surface of a processing container in the plasma processing apparatus. (Solution Means) The plasma processing apparatus includes a processing vessel 1 , a table 3 arranged in the processing vessel 1 , a dielectric window 16 provided in the processing vessel 1 , and a dielectric window 16 . An enclosure Q made of a dielectric surrounding the processing space between the slot plate 20 and the table 3 and the dielectric window 16 provided above, and by inputting microwaves into the slot plate 20, the dielectric window (16) A plasma is generated below, and the substrate W disposed on the table 3 is treated with the plasma, and a predetermined first gap G1 between the enclosing body Q and the convex portion 16p. exists

Electron beam scanning device, defect detecting system and method

本发明技术方案公开了一种电子束扫描设备，缺陷检测系统及方法。所述电子束扫描设备包括：样品台，用于放置晶圆，所述晶圆表面具有待检测区域；电子枪，置于所述样品台上方；以及，掩模板，置于所述电子枪和样品台之间；所述掩模板具有穿透区域，所述电子枪发出的电子束通过所述穿透区域射到所述晶圆表面的待检测区域。本发明技术方案的电子束扫描设备能够形成清晰的晶圆表面图像，提高缺陷检测的准确性。

Electron beam device

Plasma flood gun of ion implant apparatus

본 발명은 반응실에서 생성된 플라즈마 중에서 되도록 음이온만을 이용할 수 있도록 한 이온주입장비의 플라즈마 플러드 건을 제공하는 것으로, 이에 따른 플라즈마 플러드 건은, 소스 가스에서 이온을 추출하여 가속시킨 후 공정챔버에 있는 웨이퍼에 이온을 주입하는 이온주입장비에서, 상기 공정챔버에 설치되고, 가스공급라인이 연결되는 반응실이 형성되며, 상기 반응실의 하부에 방출공이 형성되는 본체; 상기 반응실의 대향되는 양측에 설치되는 마그네트; 상기 반응실의 내부에 설치되는 2개의 단자를 갖는 필라멘트; 상기 본체에 마이너스 전극이 인가되고 플러스 전극은 접지되는 아크 전원; 상기 아크 전원의 플러스 전극 쪽에 연결되는 자체의 플러스 전극과 마이너스 전극이 상기 필라멘트의 양 단자에 연결되는 필라멘트 전원; 및 상기 본체에 연결되어 플러스 전극이 인가되고, 전자가 관통할 수 있는 유도공이 상기 방출공에 대응되어 형성되는 추출바를 포함한다. The present invention provides a plasma flood gun of an ion implantation apparatus that can use only negative ions in the plasma generated in the reaction chamber. The plasma flood gun thus extracts and accelerates the ions from the source gas and is located in the process chamber. In the ion implantation equipment for injecting ions into the wafer, the body is installed in the process chamber, the reaction chamber is connected to the gas supply line is formed, the discharge hole is formed in the lower portion of the reaction chamber; Magnets installed on opposite sides of the reaction chamber; A filament having two terminals installed inside the reaction chamber; An arc power source to which a negative electrode is applied to the main body, and a positive electrode is grounded; A filament power source having its positive and negative electrodes connected to the positive electrode side of the arc power source connected to both terminals of the filament; And an extraction bar connected to the main body to which a positive electrode is applied, and an induction hole through which electrons can penetrate is formed corresponding to the emission hole.

Multi-electrode electron-optical system

本发明涉及一种适用于带电粒子光刻系统(10)的带电粒子束产生器(50)，该带电粒子束产生器包括：带电粒子源(52)，其用于产生沿着光轴(A)的带电粒子束(54)；准直器电极堆叠(70)，其用于准直该带电粒子束，其中该电极堆叠沿着光轴跨越准直器高度(Hc)；产生器真空腔室(51)，其用于容纳带电粒子源(52)和准直器电极堆叠(70)；以及至少一个真空泵系统(122、123)，其被设置在产生器真空腔室(51)内部离该准直器电极堆叠的外周边(85)一距离(ΔRp)处，其中至少一个真空泵系统跨越与光轴(A)基本上平行地定向的有效泵送表面(122a、123a)，并且其中该有效泵送表面具有跨越准直器高度(Hc)的至少一部分的表面高度(Hp)。

Charged particle accelerator

Charge neutralization device

There is provided a charge neutralization device capable of supplying low-energy electrons of the 5 eV level or below, preferably 2 eV level, so as to eliminate charge-up of ion implantation and damage by electrons even in a front-line device and compatible with a large-size substrate (113). The charge neutralization device includes microwave generation means (104), plasma generation means (101) for generating an electron plasma by the microwave generated by the microwave generation means, and contact means (107) for bringing the electron plasma generated by the plasma generation means into contact with the beam plasma region including the ion beam.

Ion beam charge neutralization apparatus and method

Method for protecting a substrate surface from contamination using the photophoretic effect

A method for processing a substrate surface in a process chamber wherein during chemical or physical altering of the substrate surface a laser beam is projected inside the processing chamber and along a trajectory which does not contact the substrate surface in order to capture particles by means of the photophoretic effect, particles which would otherwise impinge upon and contaminate the substrate surface.

Plasma etching apparatus and method for manufacturing semiconductor device

Focused ion beam processing

An apparatus is described which makes possible the precise sputter etching and imaging of insulating and other targets, using a finely focused beam of ions produced from a liquid metal ion source. This apparatus produces and controls a submicron beam of ions to precisely sputter etch the target. A beam of electrons directed on the target neutralizes the charge created by the incident ion beam. Imaging of the target surface and ultra-precise control of the etching process is achieved by monitoring the particles that are sputtered from the target surface.

Focused ion beam processing

Focused ion beam processing

Apparatus and method for examining specimen with a charged particle beam

An apparatus for examining a specimen with a beam of charged particles. The apparatus comprises a particle source for providing a beam of charged particles and an optical device for directing said beam of charged particles onto said specimen to be examined. Furthermore, a gas supply provides inert gas to the area of incidence of said beam of charged particles onto said specimen. The specimen can be loaded into a vacuum chamber.

Device for demonstration of rotation of free electrons in closed system

FIELD: physics.SUBSTANCE: invention relates to theoretical and experimental physics. In the method, a device for demonstrating the rotation of free electrons in a closed system contains a pair of toroidal permanent magnets facing each other with opposite magnetic poles, as well as a DC power supply. In the magnetic gap between the permanent magnets there is a hollow vacuum-evacuated glass disk with two semi-axes of its rotation, in the center of which there is a thermal cathode with a heating thread, electrically connected to the semi-axes and through a pair of sliding contacts with the source of the heating voltage of this filament of the thermal cathode. At the periphery of the glass disk, an annular anode is placed by fusing it into the glass of the disk, connected from the outside with a sliding contact. Also, the thermal cathode and the annular anode are connected via sliding contacts to a high voltage direct current source.EFFECT: technical result consists in verifying the lack of counteraction forces for the acting Lorentz forces that ensure the rotary motion of closed mechanical systems under the action of only internal forces.1 cl, 2 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 666 923 C1 (51) МПК G09B 23/18 (2006.01) H01J 37/02 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ На основании пункта 1 статьи 1366 части четвертой Гражданского кодекса Российской Федерации патентообладатель обязуется заключить договор об отчуждении патента на условиях, соответствующих установившейся практике, с любым гражданином Российской Федерации или российским юридическим лицом, кто первым изъявил такое желание и уведомил об этом патентообладателя и федеральный орган исполнительной власти по интеллектуальной собственности. (52) СПК (21)(22) Заявка: 2017117370, 18.05.2017 (24) Дата начала отсчета срока действия патента: (73) Патентообладатель(и): Меньших Олег Фёдорович (RU) Дата регистрации: 18.09.2018 (56) Список документов, ...

Beam space charge neutralization apparatus and ion implantation apparatus having the same

A high-power pulsed magnetron sputtering process as well as a high-power electrical energy source

Device in electron beam processing machines to keep the beam path of a working beam free of impurities

Method and device for irradiating and ion beam, and related method and device thereof

본 발명은 이온빔조사시의 기판표면의 대전(帶電)을 더욱 작게 억제하는 것을 그 과제로 한다. 이를 해결하기 위한 수단으로 기판(2)에 이온빔(14)을 조사하여 이온주입 등의 처리를 실시할 때 플라즈마 발생장치(20)로부터 방출시킨 플라즈마(30)를 기판(2) 근방에 공급하고, 이온빔조사에 따른 기판표면의 대전을 억제한다. 그 때 기판(2)에 조사되는 이온빔(14)의 빔전류를 I B , 플라즈마 발생장치(20)로부터 방출되는 플라즈마(30)안의 이온의 량을 나타내는 전류를 I I , 동 플라즈마(30)안의 전자량 나타내는 전자전류를 I E 로 했을 때 I E /I B 로 나타내는 비율을 1.8이상으로 유지하고 또한 I I /I E 로 나타내는 비율을 0.07이상 0.7이하로 유지한다. An object of the present invention is to further suppress the charging of the substrate surface during ion beam irradiation. As a means to solve this problem, when the ion beam 14 is irradiated onto the substrate 2 to perform ion implantation or the like, the plasma 30 emitted from the plasma generator 20 is supplied to the vicinity of the substrate 2, The charging of the substrate surface caused by the ion beam irradiation is suppressed. At that time, the beam current of the ion beam 14 irradiated onto the substrate 2 is I B , and the current representing the amount of ions in the plasma 30 emitted from the plasma generator 20 is I I , which is in the same plasma 30. When the electron current representing the electron quantity is set to I E , the ratio represented by I E / I B is maintained at 1.8 or more, and the ratio represented by I I / I E is maintained at 0.07 or more and 0.7 or less.

Charged particle beam device having pollution prevention means

(57)【要約】 【課題】 汚染物質が拡散して構成要素の機能に悪影響 を及ぼしがちな成形アパーチャや後方散乱電子検出器な どの構成要素に近接して配置された冷却トラップを有す る荷電粒子ビーム装置を提供する。 【解決手段】 冷却トラップを冷却材が通過するとき、 汚染物質が冷却トラップの表面上の、成形アパーチャや 後方散乱電子検出器から離れた場所で凝縮する。

Ion beam implanter and control method thereof

Diffuse secondary emission electron shower

본 발명은 향상된 비임 중화기를 특징으로 하는 이온주입에 관한 것이다. 실린더형 전자소오스는 이온비임이 주입실에 들어오기전의 위치에서 이온비임을 둘러싼다. 전자소오스의 규칙적으로 공간을 둔 공동은 통전하여 전자를 방출하는 전선필라멘트를 포함한다. 전자는 이온비임의 영역을 통해 가속되고 실린더형 전자 지지대의 안쪽으로 마주한 벽과 충돌한다. 이로 인해 이온비임을 중화시켜 저에너지전자 방출을 한다. 이온화 가스를 전자방출면과 이온비임간의 영역에 주사하므로서 비임중화기 수행이 향상된다. The present invention is directed to ion implantation characterized by an improved beam neutralizer. The cylindrical electron source surrounds the ion beam at the position before the ion beam enters the injection chamber. The regularly spaced cavity of the electron source contains wire filaments which energize and emit electrons. Electrons are accelerated through the region of the ion beam and collide with the walls facing inwardly of the cylindrical electron support. This neutralizes the ion beam and emits low energy electrons. By performing the ionizing gas into the region between the electron emitting surface and the ion beam, the performance of the non-neutralizer is improved.

Plasma generator

Electronic beam exposure apparatus

Substrate support apparatus and plasma processing apparatus having the same

기판 지지 장치는 기판을 지지하기 위한 기판 스테이지 및 상기 기판 스테이지 둘레에 설치되는 접지 링 어셈블리를 포함한다. 상기 접지 링 어셈블리는 도전성 물질로 형성되며 전기적으로 접지되고 둘레를 따라 복수 개의 수용 홈들이 형성된 환형 형상의 접지 링 몸체 및 상기 수용 홈들 내부로 각각 수용되도록 이동 가능한 복수 개의 접지 블록들을 포함한다. A substrate support device includes a substrate stage for supporting a substrate and a ground ring assembly installed around the substrate stage. The ground ring assembly includes an annular ground ring body made of a conductive material, electrically grounded, and having a plurality of accommodating grooves along the circumference thereof, and a plurality of ground blocks movable to be accommodated in the accommodating grooves, respectively.

Focused ion beam processing

내용 없음. No content.

System and method for removing particles entrained in an ion beam

오염입자들이 이온빔과함께 운반되는 것을 저지하기 위한 장치는 이온빔 (16)의 이동경로(20)에 대해 전기장(28)을 발생시키는 전기장 발생기(12,14)를 포함한다. 이온빔(16)과 전기장(28)영역내에 위치하는 입자(66)는 이온빔(16)과 일치하는 극성으로 하전되는데, 이 전기장(28)에 의하여 하전된 입자(66)가 이온빔(16)밖으로 밀려날 수 있다. The apparatus for preventing contaminant particles from being transported with the ion beam includes electric field generators 12 and 14 which generate an electric field 28 with respect to the path 20 of the ion beam 16. Particles 66 located within the ion beam 16 and the electric field 28 region are charged with polarity coincident with the ion beam 16, which causes the charged particles 66 to be pushed out of the ion beam 16. Can be. 이온 주입기, 웨이퍼, 이온 소스, 분석자석, 플라즈마, 오염입자 Ion implanter, wafer, ion source, analyte, plasma, contaminant

Substrate processing apparatus for using neutral beam and its processing methods

본 발명은 중성빔을 이용한 기판 처리장치에 관한 것으로, 본 발명에 따른 처리장치는 이온이 발진하는 이온 소오스, 이온 소오스로부터 발진한 이온이 입사되어 2n(n=양의 정수)회 소정각도로 충돌하여 중성빔으로 중성화되고, 중성빔이 상기 이온의 발진 각도로 복원되도록 하는 반사체, 반사체를 통과한 중성빔이 입사되어 처리가 수행되는 기판을 구비하여 이온 소오스와 기판의 표면이 서로 수직 상태를 유지한 상태에서도 중성화된 중성빔이 기판에 입사되는 각도가 수직이 되도록 함으로써 처리장치의 수직 배치 및 제작이 가능토록 하여 처리장치의 제조 및 관리가 용이하도록 하고, 중성빔의 입사 균일도와 기판 처리시의 처리 균일도가 보다 향상되도록 한다.

Method of removing electric charge

내용 없음. No content.

A method of implementing a glow discharge and a device for its implementation

РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2015 138 375 A (51) МПК H05H 1/24 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ЗАЯВКА НА ИЗОБРЕТЕНИЕ (21)(22) Заявка: 2015138375, 08.09.2015 Приоритет(ы): (22) Дата подачи заявки: 08.09.2015 (43) Дата публикации заявки: 21.03.2017 Бюл. № 09 (72) Автор(ы): Тимеркаев Борис Ахунович (RU), Исрафилов Данис Ирекович (RU) Стр.: 1 A 2 0 1 5 1 3 8 3 7 5 R U A (57) Формула изобретения 1. Способ осуществления тлеющего разряда, включающий зажигание тлеющего разряда между анодом и катодом в газоразрядной камере с поперечным к направлению электрического поля потоком рабочего газа, отличающийся тем, что при зажигании тлеющего разряда устанавливают давление в газоразрядной камере от Р=10 Торр и ниже, создают разные концентрации частиц газа в различных областях межэлектродного пространства за счет организации сверхзвукового потока рабочего газа в заданной области межэлектродного зазора в поперечном к электрическому полю направлении при скорости потока газа более V=300 м/с. 2. Устройство для осуществления тлеющего разряда, содержащее откачную вакуумную систему, подключенную к газоразрядной камере, с размещенными в ней анодом, катодом, патрубками для подачи и откачки рабочего газа, устройством для формирования потока рабочего газа, отличающееся тем, что содержит конфузор, а устройство для формирования потока рабочего газа выполнено как сверхзвуковое сопло, являющееся диффузором, причем конфузор и диффузор установлены в межэлектродном пространстве в газоразрядной камере соосно друг против друга таким образом, что ось конфузора и диффузора находится в поперечном к оси анода и катода направлении на заданном расстоянии относительно анода и катода, также имеется патрубок для откачки остаточного газа из газоразрядной камеры. 2 0 1 5 1 3 8 3 7 5 (54) Способ осуществления тлеющего разряда и устройство для его реализации R U Адрес для переписки: 423810, Республика Татарстан, г. Набережные Челны, пр. Мира, 68/19, Набережночелнинский ...

A device intrinsically designed to resonate, suitable for rf power transfer as well as group including such device and usable for the production of plasma

Structure for removing particle of ion implanters

본 발명은 이온주입과정에서 빔가이드의 측면에 구성된 냉각부의 온도 변화 및 빔가이드 내부의 그래파이트층 표면에 흐르는 전류변화를 감지하여 냉각수의 온도를 적정수준으로 유지할 수 있도록 제어함으로써 파티클의 발생을 방지할 수 있도록 한 이온주입기의 파티클 제거구조에 관한 것이다. 이를 실현하기 위한 본 발명은 이온주입기의 내부에 구성된 빔가이드와, 이온빔을 편향시키는 분류자석과, 빔가이드의 내부 측면에 설치되어 부딪치는 이온을 흡착시키는 그래파이트층을 포함하여 구성된 이온주입기의 파티클 제거구조에 있어서, 상기 그래파이트층의 온도를 적정수준으로 유지시키기 위해 빔가이드의 측면에 구성된 냉각부; 상기 냉각부에 냉각수를 공급하는 냉각펌프; 상기 냉각부의 일측면에 설치되어 냉각수의 온도 변화를 감지하는 온도감지부; 상기 그래파이트층의 표면에 전류가 흐를 수 있도록 전원을 인가시키고, 전류의 변화에 따라 파티클의 오염 정도를 측정하는 오염측정부; 상기 온도감지부 및 오염측정부에서 측정한 온도 변화 및 오염 정도를 초기설정치와 비교하여 냉각수의 온도 및 공급량을 제어하는 제어부; 를 포함하여 구성된 것을 특징으로 한다. 이온주입기, 그래파이트층, 파티클, 냉각펌프, 냉각수

Electron microscope application apparatus and sample inspection method

A charge control electrode emitting photoelectrons is disposed just above a wafer (sample) in parallel thereto, and the electrode has a through hole so that ultraviolet light can be irradiated to the wafer through the charge control electrode. Specifically, a metal plate which is formed in mesh or includes one or plural holes is used as the charge control electrode. By disposing the charge control electrode just above the sample in parallel thereto, when negative voltage is applied to the electrode, electric field approximately perpendicular to the wafer is generated. Therefore, photoelectrons are efficiently absorbed in the wafer. Also, by using the charge control electrode having approximately the same size as that of the wafer, charges on a whole surface of the wafer can be removed collectively and uniformly. Therefore, time required for the process can be reduced.

Patent FR2056665A5

Patent FR2143292A1

Device for enlarging the diffraction pattern in an electronic analyzer

METHOD AND INSTALLATION FOR CORRECTING FAULTS IN CIRCUITS INTEGRATED BY AN ION BEAM

ORDERING METHOD FOR AN IMPLANT OPERATING IN PLASMA IMMERSION

La présente invention concerne un procédé de commande pour un implanteur fonctionnant en immersion plasma comportant : - une phase d'implantation [1] durant laquelle le plasma AP est allumé et le substrat est polarisé négativement S, - une phase de neutralisation [2] durant laquelle le plasma AP est allumé et le substrat se voit appliquer une polarisation positive ou nulle S, - une phase de suppression [3] durant laquelle le plasma AP est éteint. Le procédé est remarquable en ce qu'il comporte de plus : - une phase d'expulsion [4] de particules chargées négativement au niveau du substrat durant laquelle le plasma est éteint AP. Ladite invention vise aussi une alimentation de polarisation d'un implanteur. The present invention relates to a control method for an implanter operating in plasma immersion comprising: - an implantation phase [1] during which the AP plasma is switched on and the substrate is negatively polarized S, - a neutralization phase [2] during which the AP plasma is switched on and the substrate is applied a positive or zero polarization S, - a suppression phase [3] during which the AP plasma is switched off. The process is remarkable in that it further comprises: - a phase of expulsion [4] of negatively charged particles at the level of the substrate during which the plasma is extinguished AP. Said invention also relates to a bias supply for an implanter.

PROCESS AND INSTALLATION FOR PROCESSING A SUBSTRATE SUCH AS AN INTEGRATED CIRCUIT WITH A FOCUSED BEAM OF ELECTRICALLY NEUTRAL PARTICLES

Pattern defect inspection method and system using electron beam inspection apparatus, and mapping projection type or multi-beam type electron beam inspection apparatus

Method for carrying out glow discharge and device for its implementation

Изобретения относятся к способам и устройствам для осуществления тлеющего разряда и могут найти применение при обработке поверхности и нанесении покрытий на поверхности различных изделий в вакууме, в машиностроении для поверхностной термообработки, напыления и упрочнения, а также для получения излучения, например для накачки лазеров. Технический результат - обеспечение горения тлеющего разряда при давлении от 10 Торр и ниже. В способе осуществления тлеющего разряда, включающем зажигание тлеющего разряда между анодом и катодом в газоразрядной камере с поперечным к направлению электрического поля потоком рабочего газа, при зажигании тлеющего разряда устанавливают давление в газоразрядной камере от P=10 Торр и ниже, создают разные концентрации частиц газа в различных областях межэлектродного пространства, за счет организации сверхзвукового потока рабочего газа в заданной области межэлектродного зазора в поперечном к электрическому полю направлении при скорости потока газа более V=300 м/с. Устройство для осуществления тлеющего разряда содержит откачную вакуумную систему, подключенную к газоразрядной камере с размещенными в ней анодом, катодом, патрубками для подачи и откачки рабочего газа, устройством для формирования потока рабочего газа. Устройство содержит конфузор, а устройство для формирования потока рабочего газа выполнено как сверхзвуковое сопло, являющееся диффузором, причем конфузор и диффузор установлены в межэлектродном пространстве в газоразрядной камере соосно против друг друга таким образом, что ось конфузора и диффузора находится в поперечном к оси анода и катода направлении на заданном расстоянии относительно анода и катода, также имеется патрубок для откачки остаточного газа из газоразрядной камеры. 2 н.п. ф-лы, 3 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 621 283 C2 (51) МПК H05H 1/24 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ФОРМУЛА (21)(22) Заявка: ИЗОБРЕТЕНИЯ К ПАТЕНТУ РОССИЙСКОЙ ФЕДЕРАЦИИ 2015138375, 08.09.2015 (24) Дата ...

METHOD AND DEVICE FOR IONIC ANALYSIS OF AN INSULATING SAMPLE

METHOD AND DEVICE FOR DISCHARGE OF INSULATING SAMPLES DURING ION ANALYSIS

Fluorinated composition for improving ion source performance in nitrogen ion implantation

질소 이온 주입 이후에 글리칭에 민감한 또 다른 이온 주입 작동 예를 들어 비소 및/또는 인 이온성 종들의 주입이 뒤따르는 경우 심각한 글리칭의 발생을 회피하는 질소 이온 주입을 수행하기 위한 조성물, 방법 및 장치가 기재된다. 상기 질소 이온 주입 작동은 이온 주입 시스템의 이온 소스 챔버에 도입되거나 이온 소스 챔버 내에 형성되는 질소 이온 주입 조성물에 의해 유리하게 수행되며, 이때 상기 질소 이온 주입 조성물은 질소(N 2 ) 도펀트 가스 및 NF 3 , N 2 F 4 , F 2 , SiF 4 , WF 6 , PF 3 , PF 5 , AsF 3 , AsF 5 , CF 4 및 일반식 C x F y (x≥1, y≥1)의 다른 플루오르화된 탄화수소, SF 6 , HF, COF 2 , OF 2 , BF 3 , B 2 F 4 , GeF 4 , XeF 2 , O 2 , N 2 O, NO, NO 2 , N 2 O 4 및 O 3 로 이루어진 군으로부터 선택된 하나 이상을 포함하는 글리칭-억제 가스, 및 임의적으로 수소-함유 가스 예컨대 H 2 , NH 3 , N 2 H 4 , B 2 H 6 , AsH 3 , PH 3 , SiH 4 , Si 2 H 6 , 　H 2 S, H 2 Se, CH 4 및 일반식 C x H y (x≥1, y≥1)의 다른 탄화수소 및 GeH 4 로 이루어진 군으로부터 선택된 하나 이상을 포함하는 수소-함유 가스를 포함한다. Compositions, methods and methods for performing nitrogen ion implantation avoiding the occurrence of severe glitching if followed by another ion implantation operation susceptible to glitching after nitrogen ion implantation, for example implantation of arsenic and/or phosphorus ionic species The device is described. The nitrogen ion implantation operation is advantageously performed by a nitrogen ion implantation composition introduced into the ion source chamber of the ion implantation system or formed in the ion source chamber, wherein the nitrogen ion implantation composition comprises nitrogen (N 2 ) dopant gas and NF 3 , N 2 F 4 , F 2 , SiF 4 , WF 6 , PF 3 , PF 5 , AsF 3 , AsF 5 , CF 4 and other fluorinated compounds of the general formula C x F y (x≥1, y≥1) From the group consisting of hydrocarbons, SF 6 , HF, COF 2 , OF 2 , BF 3 , B 2 F 4 , GeF 4 , XeF 2 , O 2 , N 2 O, NO, NO 2 , N 2 O 4 and O 3 A glitch-inhibiting gas comprising at least one selected, and optionally a hydrogen-containing gas such as H 2 , NH 3 , N 2 H 4 , B 2 H 6 , AsH 3 , PH 3 , SiH 4 , Si 2 H 6 , H 2 S, H 2 Se, CH 4 and other hydrocarbons of the general formula C x H y (x≥1, y≥1) and a hydrogen-containing gas comprising at least one selected from the group consisting of GeH 4 .

Ion implantation surface charge control method and apparatus

Ion Implantation Surface Charge Control Method and Apparatus Abstract An ion beam neutralizer. High energy electrons are directed through an ion beam neutralizing zone or region containing an ionizable gas. As the high energy electrons collide with the gas molecules, they ionize the gas molecules and produce low energy electrons which are trapped by a positively charged ion beam. As high energy electrons pass out of the neutralizing zone they are deflected back to the neutralizing zone by a cylindrical conductor biased to deflect the high energy electrons and an accelerating grid for accelerating the electrons back through the beam neutralizing zone.

For processing the device of substrate

本发明提供了一种使用等离子体的基板处理装置。该基板处理装置包括其内具有处理空间的室、设置在该室中以支撑该基板的支撑构件、将气体供应到该室中的气体供应单元、以及设置在该室上部的等离子体源，该等离子体源包括从供应到该室中的气体产生等离子体的天线，其中，该室包括具有开口的顶面的壳体，该壳体内具有处理空间，以及覆盖该壳体的开口的顶面的电介质组件，并且其中该电介质组件包括电介质窗口和具有比电介质窗口的强度更大的强度的加强膜。