21-02-2019 дата публикации
Номер: US20190057903A1
A 3D semiconductor device, the device including: a first layer including a first single crystal transistor; a second layer including second transistors; a third layer including third transistors; a fourth layer including fourth transistors, where the first layer is overlaid by the second layer, where the second layer is overlaid by the third layer, and where the third layer is overlaid by the fourth layer; where a plurality of the fourth transistors are aligned to the plurality of the first single crystal transistor with less than 40 nm alignment error, where the third transistors are junction-less transistors (JLT), where each of the fourth transistors include a transistor channel, a drain and a source, and where the transistor channel is significantly narrower than the drain or the source. 1. A 3D semiconductor device , the device comprising:a first level comprising a first single crystal transistor;a second level comprising second transistors;a third level comprising third transistors; wherein said first level is underneath said second level,', 'wherein said second level is underneath said third level, and', 'wherein said third level is underneath said fourth level;, 'a fourth level comprising fourth transistors,'} 'wherein said at least first metal layer and second metal layer comprise connections between a plurality of said first single crystal transistor; and', 'at least a first metal layer and a second metal layer,'} wherein said NAND type memory cells comprise a plurality of said third transistors,', 'wherein a plurality of said fourth transistors are aligned to said plurality of said first single crystal transistor with less than 140 nm alignment error,', 'wherein said second metal layer is above said first metal layer,', 'wherein said first metal layer comprises a first current carrying capacity,', 'wherein said second metal layer comprises a second current carrying capacity,', 'wherein said first current carrying capacity is significantly greater than ...
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