КОМПОЗИЦИЯ, ЦВЕТОПРЕОБРАЗУЮЩИЙ ЛИСТ И СВЕТОИЗЛУЧАЮЩЕЕ ДИОДНОЕ УСТРОЙСТВО

Изобретение относится к неорганической химии и может быть использовано при изготовлении цветопреобразующих листов для сельского хозяйства, оптических и светоизлучающих диодных устройств. Композиция включает по меньшей мере один неорганический флуоресцентный материал, имеющий пиковую длину волны светового излучения 660-730 нм, и матричный материал, дополнительно содержащий один или несколько бромсодержащих или серосодержащих мономеров. Неорганический флуоресцентный материал выбирают из сульфидов, тиогаллатов, нитридов, оксинитридов, силикатов, оксидов металлов, апатитов, квантово-размерных материалов или их комбинаций, например из металлооксидных фосфоров, таких как Al2O3:Cr3+, Y3Al5O12:Cr3+, MgO:Cr3+, ZnGa2O4:Cr3+, MgAL2O4:Cr3+или их комбинаций. Матричный материал выбран из фотохимически отверждаемых, термоотверждающихся, термопластичных полимеров или их комбинаций. Для изготовления цветопреобразующего листа указанную композицию наносят на подложку и фиксируют матричный материал выпариванием ...

СВЕТОИЗЛУЧАЮЩЕЕ УСТРОЙСТВО, ИСПОЛЬЗУЮЩЕЕ НЕСТЕХИОМЕТРИЧЕСКИЕ ТЕТРАГОНАЛЬНЫЕ ЩЕЛОЧНОЗЕМЕЛЬНЫЕ СИЛИКАТНЫЕ ЛЮМИНОФОРЫ

Изобретение относится к светоизлучающим устройствам, использующим нестехиометрические тетрагональные щелочноземельные силикатные люминофоры. Предложенное светоизлучающее устройство включает в себя светоизлучающий диод, излучающий свет в ультрафиолетовой или видимой части спектра, и нестехиометрический люминесцентный материал, размещенный вокруг светоизлучающего диода. Люминесцентный материал поглощает по меньшей мере часть света, излучаемого светоизлучающим диодом, и излучает свет с отличающейся от поглощенного света длиной волны. Нестехиометрический люминесцентный материал имеет тетрагональную кристаллическую структуру и содержит больше кремния в кристаллической решетке, чем его содержится в кристаллической решетке силикатных люминофоров, имеющих стехиометрическую кристаллическую структуру. Технический результат - благодаря использованию нестехиометрических тетрагональных щелочноземельных силикатных люминофоров могут быть получены светоизлучающие устройства, обладающие повышенной стойкостью ...

НОСИТЕЛЬ ДАННЫХ С ИНТЕГРАЛЬНОЙ СХЕМОЙ

Изобретение относится к носителю данных по меньшей мере с двумя расположенными одна над другой на некотором его участке интегральными схемами, по меньшей мере одна из которых может осуществлять обмен данными через элементы связи с внешними устройствами. Технический результат заключается в максимальном упрощении обмена информацией между интегральными схемами за счет предусмотренных средств, обеспечивающих такой обмен информацией между ними путем негальванической, бесконтактной связи. 3 с. и 20 з.п.ф-лы, 13 ил.

СВЕТОИЗЛУЧАЮЩЕЕ УСТРОЙСТВО, ИМЕЮЩЕЕ СИЛИКАТНЫЕ ЛЮМИНОФОРЫ С МОДИФИЦИРОВАННОЙ ПОВЕРХНОСТЬЮ

... 1. Светоизлучающее устройство, содержащее:первый светоизлучающий диод; иповерхностно-модифицированный люминофор, выполненный с возможностью поглощать свет, излучаемый из первого светоизлучающего диода, и с возможностью излучать свет, имеющий отличную от поглощенного света длину волны, причем поверхностно-модифицированный люминофор содержит:силикатный люминофор; ифторированное покрытие, расположенное на силикатном люминофоре.2. Светоизлучающее устройство по п. 1, при этом фторированное покрытие выполнено с возможностью создавать гидрофобные поверхностные центры, причем фторированное покрытие содержит фторированный неорганический агент, фторированный органический агент, или же как фторированный неорганический агент, так и фторированный органический агент.3. Светоизлучающее устройство по п. 1, при этом поверхностно-модифицированный люминофор дополнительно содержит влагозащитный слой, содержащий оксид, расположенный на фторированном покрытии или расположенный между фторированным покрытием и ...

ПОВЕРХНОСТНО-МОДИФИЦИРОВАННЫЕ СИЛИКАТНЫЕ ЛЮМИНОФОРЫ

... 1. Поверхностно-модифицированный силикатный люминофор, содержащий:силикатный люминофор; ипокрытие, включающее в себя по меньшей мере одно из указанного ниже: фторированное покрытие, включающее в себя фторированный неорганический агент, фторированный органический агент или комбинацию фторированного неорганического агента и фторированного органического агента, причем фторированное покрытие образует гидрофобные поверхностные центры, икомбинацию фторированного покрытия и по меньшей мере одного влагостойкого барьерного слоя, причем влагостойкий барьерный слой включает в себя MgO, AlO, YO, LaO, GdO, LuOи SiO,или соответствующие прекурсоры,где покрытие осаждено на поверхности силикатного люминофора.2. Поверхностно-модифицированный силикатный люминофор по п.1, где поверхностно-модифицированный люминофор включает порошкообразный люминофор на основе силикатов щелочноземельного металла.3. Поверхностно-модифицированный силикатный люминофор по п.1, где фторированное покрытие включает в себя функционализированные ...

Mit Harz eingekapseltes Halbleiterbauelement

Lichtemittierende Halbleitervorrichtung und Verfahren zu deren Herstellung

Halbleitereinrichtung und Verfahren zu deren Herstellung

In einer Halbleitereinrichtung ist die Einrichtung so angeordnet, dass sie aufweist: eine Halbleitervorrichtung (2) mit Elektroden (3, 4, 5) und Verdrahtungs-Zusammenschaltungen (6) auf einer Hauptoberfläche eines Halbleiterchips (1); ein auf einer Seite der Hauptoberfläche des Halbleiterchips (1) platziertes erstes Harzstrukturelement (A), das in lateralen und nach oben gerichteten Richtungen einer spezifischen Elektrode (3) der Halbleitervorrichtung eine Hohlkörperstruktur (8) zwischen der spezifischen Elektrode (3) und dem ersten Harzstrukturelement (A) bildet; ein zweites Harzstrukturelement (B), das eine äußere laterale Seite des ersten Harzstrukturelements (A) bedeckt und die Permittivität aufweist, die geringer als die Permittivität des ersten Harzstrukturelements (A) oder gleich dieser ist; und einen Isolierungsfilm (11), der eine äußere laterale Seite des zweiten Harzstrukturelements (B) bedeckt und eine geringere Feuchtigkeitspermeabilität als diejenige des zweiten Harzstrukturelements ...

Semiconductor module, has bonding wire bonded at load terminal and connected with upper contact piece, and explosion protection unit arranged between load terminals and upper contact piece and embedded in bonding wire at specific length

The module (100) has an electrically conductive lower contact piece (31) and an electrically conductive upper contact piece (32) spaced in a vertical direction (v). Multiple semiconductor chips comprise load terminals. One of the load terminals is electrical conductively connected with the lower contact piece. A bonding wire (4) is bonded at the load terminal and connected with the upper contact piece. An explosion protection unit is arranged between the load terminals and the upper contact piece and embedded in the bonding wire over 80% or 90% of length. The semiconductor chips are designed as unipolar and bipolar transistors such as IGBTs and MOSFETs. The bonding wire is designed as a flat small strip.

WELLENLÄNGENKONVERTIERENDE REAKTIONSHARZMASSE UND LEUCHTDIODENBAUELEMENT

HALBLEITEREINHEIT UND VERFAHREN ZUR HERSTELLUNG DERSELBEN

Eine Elektrode (1) ist auf einer Halbleiterschicht (11) angeordnet. Eine Polyimid-Schicht (12) weist eine Öffnung auf, die auf der Elektrode (1) angeordnet ist, bedeckt den Rand der Elektrode (1) und erstreckt sich bis auf die Elektrode (1). Eine Kupfer-Schicht (13) ist innerhalb der Öffnung (OP) auf der Elektrode (1) angeordnet und befindet sich entfernt von der Polyimid-Schicht (12) auf der Elektrode (1). Das eine Ende eines Kupfer-Drahts (14) ist mit der Oberfläche der Kupfer-Schicht (13) verbunden.

Semiconductor device esp. LED with increased life

A method of improving the properties of an LED, having one or more light-emitting chips (23), first and second lead frames (13,15) and an encapsulating layer (19), involves applying a liq. coating (21) over the chip (23) and then positioning the chip and connecting it to the lead frames (13,15). liq. coating application over the chip and the lead frames being effected before applying the encapsulating layer (19) over the chip. Pref. the liq. coating (21) is a polyalkylmethylsiloxane, dimethyl-polysiloxane or polyarylalkylsiloxane. Also claimed are (i) a method of improving the reliability of a semiconductor device; (ii) and LED; and (iii) a semiconductor device including the liq. coating (21).

Semiconductor power module with excess current protection unit has fuse unit surrounded by explosion protection material connected across conductive tracks by narrower leads than power semiconductor

A semiconductor power module (1) with an excess current protection unit comprises a housing with external load connections (42, 44, 46) and a substrate with mutually insulated metallic connection tracks of different polarity, at least one with a semiconductor power element (70, 72) with a connection of given cross-section. A fuse unit comprises a second connection element of smaller lead cross-section between two tracks or a track and a load connection and this unit is encased in a section of explosion-protecting material.

Connection between sensor terminal and conductor path applied to glass plate uses conductive connection element ultrasonically welded to conductor path

Connection is provided by electrically conductive connection element (11), e.g. bonding wire, which is ultrasonically welded to conductor path (5) applied to surface of glass plate (1) and which is coupled to sensor terminal (13) mounted on glass plate. Surface (3) of glass plate is ridged at point of connection between conductor path and connection element, ultrasonic welding position lying in furrow between 2 ridges (4). An Independent claim for an application of a sensor terminal connection for a ceramic glass cooking hob surface is also included.

Beschleunigungssensoranordnung

Die Erfindung betrifft eine Beschleunigungssensoranordnung, die insbesondere zur Messung niedrigerer Beschleunigungen geeignet ist. DOLLAR A Erfindungsgemäß weist die Beschleunigungssensoranordnung mindestens auf: DOLLAR A ein Premoldgehäuse (2, 3) aus einem Kunststoffmaterial mit einem Gehäuseinnenraum (5), DOLLAR A einen Leadframe (6), der sich durch das Premoldgehäuse (2, 3) in den Gehäuseinnenraum (5) erstreckt, und DOLLAR A einen Beschleunigungs-Sensorchip (12), der mittels einer Kleberschicht (11) in dem Gehäuseinnenraum (5) befestigt und mittels Leitungsbond-Verbindungen (14) mit dem Leadframe (6) verbunden ist. DOLLAR A Vorteilhafte Spannungsentkopplungen werden hierbei durch eine einheitliche Dicke der Kleberschicht (11) größer als 50 mum, vorzugsweise größer als 100 mum, erreicht, wobei insbesondere das Klebermaterial der Kleberschicht (11) weicher als das Chipmaterial des Beschleunigungs-Sensorchips (12) ist.

Einbettung additiver Partikel in einer Verkapselung einer elektronischen Vorrichtung

Eine elektronische Vorrichtung (100), die einen Träger (102) mit einer Befestigungsfläche (104), mindestens einen elektronischen Chip (108), montiert auf der Befestigungsfläche (104), eine Verkapselung (110), die mindestens teilweise den Träger (102) und den mindestens einen elektronischen Chip (108) einkapselt, und eine Mehrzahl von Kapseln (500) in der Verkapselung (110) umfasst, wobei die Kapseln (500) einen Kern (600) umfassen, der ein Additiv und eine Hülle (602) umfasst, insbesondere eine zerberstbare Hülle (602), die den Kern (600) einschließt.

Verfahren zum Herstellen einer optoelektronischen Baugruppe und optoelektronische Baugruppe

In verschiedenen Ausführungsbeispielen wird ein Verfahren zum Herstellen einer optoelektronischen Baugruppe (12) bereitgestellt, bei dem ein optoelektronisches Bauelement (16) auf einem Träger (14) angeordnet wird. Elektrische Anschlüsse des optoelektronischen Bauelements (16) werden mit dazu korrespondierenden elektrischen Kontakten des Trägers (14) elektrisch gekoppelt. Auf einer von dem Träger (14) abgewandten ersten Seite des optoelektronischen Bauelements (16) wird ein Dummy-Körper (20) angeordnet. Auf dem Träger (14) wird ein Vergussmaterial (22) angeordnet, das zumindest teilweise das optoelektronische Bauelement (16) und zumindest teilweise den Dummy-Körper (20) umgibt. Der Dummy-Körper (20) wird, nachdem das Vergussmaterial (22) formfest ist, entfernt, wodurch eine Ausnehmung (23) entsteht, die zumindest teilweise von dem formfesten Vergussmaterial (22) umgeben ist. Ein optisch funktionelles Material (24) wird in die Ausnehmung (23) gefüllt.

Stack arrangement for FBGA memory module, has encapsulation at central region of each memory chip, constituting spacer between chips, and metallization connected to carrier substrate

A metallization (4) is arranged on an active side of each memory chip, and connected to the bond pad (3) of the memory hip. The metallizations of each individual component (1) is identical. The central regions of each memory chip are provided with an encapsulation (7) which is stacked on the carrier substrate with the same alignment to each other. The encapsulation constitutes a spacer between the chips. Each metallization is connected electrically to the carrier substrate.

Lichtemittierende Vorrichtung

Lichtemittierende Vorrichtung mit einem lichtemittierenden Element (3), das Licht mit einer vorbestimmten Wellenlänge emittiert, sowie einem Versiegelungsabschnitt (2), der das lichtemittierende Element versiegelt, wobei: das lichtemittierende Element mit Verspannungen reduzierenden Abschnitten (33) versehen ist, die eine interne Verspannung in dem Versiegelungsabschnitt reduzieren, wobei das lichtemittierende Element von einer Flipchipbauart ist, bei der eine Emissionsoberflächenseite eine erste Oberfläche eines Substrats (30) ist, die einer zweiten Oberfläche des Substrats gegenüberliegt, auf der eine Lichtemissionsschicht (31) zum Emittieren des Lichts gebildet ist; Elektroden des lichtemittierenden Elements auf einer unteren Oberfläche des lichtemittierenden Elements gebildet sind, die der ersten Oberfläche gegenüberliegt; die Verspannungen reduzierenden Abschnitte so ausgebildet sind, dass die Ecken auf der Emissionsoberflächenseite abgerundet sind, so dass runde Abschnitte bereitgestellt ...

Lichtemittierendes Element, Beleuchtungsvorrichtung und deren Vorrichtungsrahmen

Beleuchtungsvorrichtung, umfassend:- eine Tragbasis (5);- ein lichtemittierendes Element (1), das auf der Tragbasis (5) angeordnet ist, wobei das lichtemittierende Element (1) folgendes aufweist:- ein Substrat (2) mit einer Auflagerfläche (210) und einer Seitenfläche, und- mehrere Licht emittierende Dioden-, LED, Chips (14), die auf der Auflagerfläche (210) angeordnet sind und mehrere Außenoberflächen aufweisen;- eine erste Wellenlängenumwandlungsschicht (4), die die mehreren Außenoberflächen bedeckt, ohne die Seitenfläche zu bedecken,wobei das lichtemittierende Element (1) eine erste Hauptoberfläche (21A) aufweist, die durch die mehreren Außenoberflächen gebildet wird und einen Teil der Auflagerfläche (210), der nicht von den mehreren LED Chips (14) bedeckt ist, und eine zweite Hauptoberfläche (21B) aufweist, die der Auflagerfläche (210) gegenüberliegt,wobei wenigstens einer der mehreren LED Chips (14) betrieben wird, um Licht zu emittieren, welches vorgesehen ist, das Substrat (2) zu ...

Multi-wavelength light emitting diode chip for producing e.g. blue light, has two masses with red and green phosphorescence materials, where light of chip is radiated by masses to receive white light by combination of wavelengths of masses

The chip (21) has a mass (61) containing a red phosphorescence material (52) with appropriate color and applied on a lower side of the chip. Another mass (62) containing a green phosphorescence material (53) with appropriate color is applied on a front side of the chip. The light of the chip is radiated by the masses, so that a directed white light is received by combination of the wavelengths of the masses. A reflection layer is provided on the mass (61). An independent claim is also included for a manufacturing method for a multi-wavelength light emitting diode.

Bonding wire protecting device, has bonding sites provided on circuitry carrier e.g. circuit board, and plug connector, where bend protection units are provided on regions of bonding wire

The device has bonding sites provided on a circuitry carrier (20) e.g. circuit board, and a plug connector (22). Bend protection units e.g. medium-soft or medium-hard silicone cappings, are provided on regions of a bonding wire (16). The silicone cappings are provided with hardness of 20-80 shore and vulcanized by UV-radiation. The silicone cappings comprise an elastic module region that lies between 0.5 to 10 Newton per square millimeter. The circuitry carrier is arranged in a sensor housing (12).

Halbleiterpackung und Herstellungsverfahren hierfür

Die Erfindung bezieht sich auf eine Halbleiterpackung und ein Verfahren zur Herstellung einer solchen. DOLLAR A Erfindungsgemäß beinhaltet die Halbleiterpackung einen Halbleiterchip (100) mit je einem integrierten Schaltungsaufbau auf beiden Seiten (A, B), ein Substrat (110), erste und zweite Bonddrähte (130, 132), ein erstes und zweites Abdichtungsmaterial (140, 142) und eine Mehrzahl von Lotkugeln (150). DOLLAR A Verwendung in der Halbleiterpackungstechnologie.

Leuchtdioden-Baugruppe mit antiparallelem Diodenchip

Leuchtdioden-Baugruppe (400, 600) vom Anschlusstyp, umfassend: – eine Leuchtdioden-Vorrichtung, die in der Leuchtdioden-Baugruppe (400, 600) vom Anschlusstyp angeordnet ist; und – eine Formmasse (414), die die Leuchtdioden-Vorrichtung abdeckt, wobei mehrere die Streuung unterstützende Wellenlängenumwandler (100, 200, 300) in der Formmasse (414) angeordnet sind; – wobei Bereiche der Lichtstrahlen, die von der Leuchtdioden-Vorrichtung zu jedem der die Streuung unterstützenden Wellenlängenumwandler (100, 200, 300) emittiert werden, durch jeden der die Streuung unterstützenden Wellenlängenumwandler (100, 200, 300) gestreut werden, und Bereiche von Lichtstrahlen, die von der Leuchtdioden-Vorrichtung zu jedem der die Streuung unterstützenden Wellenlängenumwandler (100, 200, 300) emittiert werden, absorbiert werden, um jeden der die Streuung unterstützenden Wellenlängenumwandler (100, 200, 300) anregen, um Licht in einer anderen Wellenlänge zu emittieren; dadurch gekennzeichnet, dass die Leuchtdioden-Vorrichtung ...

Halbleiterbauteil mit Korrosionsschutzschicht und Verfahren zur Herstellung desselben

Halbleiterbauteil (1; 23), das die folgenden Merkmale aufweist: - ein Schaltungsträger (2) mit mehreren Innenkontaktflächen (5), die ein erstes Material mit einem ersten elektrochemischen Potential aufweisen, - ein Halbleiterchip (3) mit einer aktiven Oberfläche (13) und einer Rückseite (11), wobei die aktive Oberfläche (13) mehrere Chipkontaktflächen (14) aufweist, die ein zweites Material mit einem zweiten elektrochemischen Potential aufweisen, und - Bonddrahtverbindungen (15) zwischen den Chipkontaktflächen (14) und den Innenkontaktflächen (5) des Schaltungsträgers (2), wobei die Bonddrähte (15) ein drittes Material mit einem dritten elektrochemischen Potential aufweisen, wobei die Verbindungsstellen (16) zwischen den Chipkontaktflächen (14) und den Bonddrähten (15) und die Verbindungsstellen (17) zwischen den Innenkontaktflächen (5) und den Bonddrähten (15) mit einer Korrosionsschutzschicht (20; 24) beschichtet sind, wobei Mittelbereiche (21) der Bonddrähte (15) frei von der Korrosionsschutzschicht ...

ELECTROLUMINESCENT DEVICES

... 1459455 Semiconductor devices PHILIPS ELECTRONIC AND ASSOCIATED INDUSTRIES Ltd 11 Dec 1973 57357/73 Heading H1K [Also in Divisions C4 and G5] An electroluminescent device comprises at least two simultaneously energizable electroluminescent light sources connected in series so that current of the same intensity can be simultaneously injected in each, the light flux emitted by a first source emitting light of a first wavelength being dominant when a current of intensity I 1 is injected into each source, and the flux emitted by a second source emitting light of a second wavelength being dominant when a current of intensity I 2 is injected into each source. The device allows supply to the sources by a common conductor rather than by a plurality of conductors and supplies &c. One or more of the sources may be made up of identical series connected sources. Preferably a single source is included for each desired (primary) colours enabling other colours to be obtained by mixing. The duration of ...

Light emitting device

METHOD FOR BONDING A WIRE TO A METAL LAYER

... 1294770 Soldering HITACHI Ltd 22 Dec 1970 [29 Dec 1969] 60892/70 Heading B3R [Also in Division H1] In connecting a wire to a metal layer on a substrate the wire is guided through the passage of a capillary tube and a portion of the wire extending from the tube is pressed against the layer by the tube, the tube is heated to a temperature not lower than the melting point of the layer but lower than the melting point of the wire whereby the portion of the wire is pressed into the metal layer while metal of the layer is melted and the layer is then cooled to bond the wire to the layer, the tool being then moved away. An electrode 2, Fig. la, printed on a ceramic substrate 1 of a semi-conductor device carries a lead-tin solder layer 3 and a silver wire 5 is guided through the passage of a capillary tube 4. A head 6 is formed on the wire by burning in a hydrogen flame. The tube 4 is heated by resistance means to a temperature not lower than the melting point of the solder 3, e.g. to 300‹ C. and ...

Packaging integrated circuits

An integrated circuit (12) is mounted on a flag portion (11) of a leadframe. The leadframe also includes lead posts (10) to which are connected electrical connectors or bond wires (13) extending between the posts (10) and the integrated circuit (12). A plastic package (A) is moulded around the lead posts (10), the flag (11), the integrated circuit (12) and the bond wires (13). A polymer material is coated on all surfaces exposed prior to moulding of the package (A). The polymer material used for this encapsulation is is of very low molecular weight and viscosity and provides protection of the integrated circuit from corrosion by being chemisorbed onto its surface. This effectively seals any problem in the integrity of the passivation layer preventing moisture ingress, collection and therefore corrosion. ...

Method for making a carbide thin film thermistor

A method for making a carbide thin film thermistor which comprises providing an insulating substrate, forming at least one pair of electroconductive electrodes on the substrate in a desired pattern, and forming a carbide resistor film on the insulating substrate and the electroconductive electrodes by sputtering process while leaving part of the electrodes exposed for external connections. A carbide target material is sputtered in an inert gas atmosphere containing a small amount of an impurity gas. The thermistor element is arbitrarily controlled to have a desired level of resistance by choice of the impurity gas, the amount of such gas and the mode of sputtering. Optionally, the element is trimmed to adjust its resistance accurately and is also hermetically sealed within a glass tube to prevent the element from being contaminated with harmful substances.

SEMICONDUCTOR PRESSURE TRANSDUCER AND METHOD OF ASSEMBLY THEREOF

POLYIMIDE-SILOXANE COPOLYMER PROTECTIVE COATING FOR SEMICONDUCTOR DEVICES

LIGHTING INSTALLATION WITH RADIATION SOURCE AND LUMINESZIERENDEM MATERIAL

LICHTEMITTIERENDES ELEMENT WITH A FLUORESZENTEN SUBSTANCE

PROCEDURE FOR THE PRODUCTION OF PHOSPHORS CONSISTING OF ORTHOSILIKATEN FOR PCLEDS

LIGHTING INSTALLATION WITH RADIATION SOURCE AND FLUORESCENT MATERIAL

PROCEDURE FOR A PACKAGING OF AN INTEGRATED CIRCUIT

SEMICONDUCTOR WHITE LIGHT SOURCE

Light-emitting diode arrangement comprising a heat-dissipating plate

Method for producing a single-sided electronic module including interconnection zones

The invention relates to a method for producing a module (17) having an electronic chip including metallisations which are accessible from a first side of the metallisations and an integrated circuit chip which is arranged on the second side of the metallisations, opposite the first side. The method is characterised in that it comprises the step of forming electrical interconnection elements (9C, 9C, 30) which are separate from the metallisations, directly connecting the chip, and are arranged on the second side of the metallisations. The invention also relates to a module corresponding to the method and to a device comprising said module.

Materials and optical components for color filtering in lighting apparatus

Materials and optical components formed thereof that are suitable for use in a lighting apparatus to impart a color filtering effect to visible light. At least a portion of such an optical component is formed of a composite material comprising a polymeric matrix material and an inorganic particulate material that contributes a color filtering effect to visible light passing through the composite material, and the particulate material comprises a neodymium compound containing Nd ...

METHOD FOR MANUFACTURING A PLASTIC ENCAPSULATED SEMICONDUCTOR DEVICE AND A LEAD FRAME THEREFOR

Disclosed is a method for manufacturing a plastic encapsulated semiconductor device and a lead frame therefor. A semiconductor device assembly is formed, using a lead frame an external lead of which extends to one side of a substrate support serving as a heat sink and supporting a semiconductor substrate, and strips of which extend to the other end of the substrate support. The external lead and strips are clamped by upper and lower molds for plastic encapsulation. A connecting portion between the external lead and a connecting band and the strips extending from a plastic encapsulating housing to the outside are cut. The substrate support is, thus, held properly at the time of plastic encapsulation, preventing bending of the semiconductor device due to injection pressure of the plastic. Therefore, a thin film of plastic is uniformly and with high precision formed on a lower surface of the substrate support.

PLASTIC ENCAPSULATED SEMICONDUCTOR DEVICE AND LEAD FRAME THEREFOR

A lead frame having a substrate support which supports a semoconductor substrate connected to a top of one of a plurality of external leads extending in the same direction from a connecting band, wherein a threedimensional pattern of a groove shape or a bore shape is formed on at least part of one surface of the substrate support the other surface of which supports the semiconductor substrate.

LIGHT EMITTING DIODE WITH INTEGRAL HEAT DISSIPATION MEANS

Light emitting diodes are arranged with a package having an integral heat dissipation mechanism. A material having a high thermal conductivity is well coupled to a semiconductor chip providing a path for heat to be drawn away from the chip which is susceptible to overheat. In certain versions, heat dissipation mechanisms are also provided with a second terminal end which further facilitates removal of heat from the device package. The highly conductive path is formed integrally with other LED package components and cooperates therewith to provide additional support for LED functionality.

ELECTRONIC DEVICE PACKAGING

NITRIDE PHOSPHOR AND METHOD FOR PREPARATION THEREOF, AND LIGHT EMITTING DEVICE

To provide a phosphor containing a comparatively much red component and having high light emitting efficiency, high brightness and further high durability, the nitride phosphor is represented by the general formula L X M Y N((2/3)X+(4/3)Y):R or L X M Y O Z N((2/3)X+(4/3)Y-(2/3)Z):R (wherein L is at least one or more selected from the group II Elements consisting of Mg, Ca, Sr, Ba and Zn, M is at least one or more selected from the Group IV Elements in which Si is essential among C, Si and Ge, and R is at least one or more selected from the rare earth elements in which Eu is essential among Y, La, Ce, Px, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Lu.); contains the another elements.

OPTOELECTRONIC COMPONENTS WITH ADHESION AGENT

... ²Si02 layers are used as adhesion layers in the case of ²optoelectronic components. Durable adhesions can be ²produced with silicone rubbers. These materials ²normally have only an insufficient adhesive strength on ²materials as frequently used for optoelectronic ²components, such as LED modules. This then leads in ²further consequence to a clear reduction of the ²operating life of the manufactured components. These ²restrictions are avoided effectively by the use of the ²adhesion layers (600, 601), endurance upon operation in ²damp surroundings and upon temperature change loading ²is substantially improved.² ...

MIXED IMPEDANCE BOND WIRE CONNECTIONS AND METHOD OF MAKING THE SAME

A die package having mixed impedance leads where a first lead has a first metal core (130), and a dielectric layer surrounding the first metal core (130), and a second lead has a second metal core, and a second dielectric layer (132) surrounding the second metal core, with the dielectric thicknesses differing from each other. A method of making a die package having leads with different impedances formed by cleaning die substrate connection pads (162), connecting the die package to the die substrate connection pads via a first wirebond having a first diameter metal core (164), depositing at least one layer of dielectric on the wirebond metal core (170), metalizing the at least one layer of dielectric (174), connecting the die package to the die substrate connection pads via a second wirebond having a second diameter metal core, depositing at least one layer of dielectric on the second wirebond second diameter metal core, and metalizing the at least one layer of dielectric on the second diameter ...

MIXED IMPEDANCE BOND WIRE CONNECTIONS AND METHOD OF MAKING THE SAME

A die package having mixed impedance leads where a first lead has a first metal core (130), and a dielectric layer surrounding the first metal core (130), and a second lead has a second metal core, and a second dielectric layer (132) surrounding the second metal core, with the dielectric thicknesses differing from each other. A method of making a die package having leads with different impedances formed by cleaning die substrate connection pads (162), connecting the die package to the die substrate connection pads via a first wirebond having a first diameter metal core (164), depositing at least one layer of dielectric on the wirebond metal core (170), metalizing the at least one layer of dielectric (174), connecting the die package to the die substrate connection pads via a second wirebond having a second diameter metal core, depositing at least one layer of dielectric on the second wirebond second diameter metal core, and metalizing the at least one layer of dielectric on the second diameter ...

SEMICONDUCTOR CHIP MODULE AND METHOD FOR MANUFACTURING THE SAME

The semiconductor chip module according to the present invention comprises a semiconductor substrate on which a wiring portion is formed, a semiconductor chip 4 mounted so as to face a circuit side up to the wiring portion, a heat sink 3, 3a, 13 with one end thereof contacted to the central portion of an upper surface of the semiconductor chip 4, 4a; and a cap 2 which has an opening 2a for exposing the other end of the heat sink 3, 3a, 13 to the outside thereof, the cap 2 enclosing all of the semiconductor chips 4, 4a. Accordingly, the heat generated from the semiconductor chips 4, 4a can be dissipated through the heat sink 3, 3a, 13 to the outside. It results in providing a semiconductor chip module without inconvenience for operation with high speed.

Verfahren zur Herstellung eines Diffusionstransistors und nach diesem Verfahren hergestellter Diffusionstransistor

Verfahren zur Herstellung eines Halbleiterbauelementes, wobei das Anbringen elektrischer Verbindungen zwischen Kontaktstellen des Halbleiterbauelementes einerseits und Zuführungsleitern andererseits ein Werkzeug verwendet wird

LED lighting unit and method of production.

Une unité déclairage est décrite comprenant un dissipateur de chaleur métallique (28), et une pluralité de puces semi-conductrices de diode émettrice de lumière (30), fixé à une face émettrice de lumière du dissipateur de chaleur. Les puces (30) peuvent être placées dans un canal (34) ou une ou plus de tasses encastrées. Au moins quelques puces (30) sont interconnectées directement et électriquement de puce à puce par pontage (40). Les puces (30) peuvent être couvertes par une encapsulation transmettant la lumière. Lunité déclairage bénéficie dune construction efficace, et de bonnes caractéristiques de dissipation thermale.

LED lighting unit and a method of manufacturing such a unit.

Une unité d’éclairage est décrite comprenant un dissipateur de chaleur métallique (28), et une pluralité de puces semi-conductrices de diode émettrice de lumière (30), fixée à une face émettrice de lumière du dissipateur de chaleur. Les puces (30) peuvent être placées dans un canal (34) ou une ou plus de tasses encastrées. Au moins quelques puces (30) sont interconnectées directement et électriquement de puce à puce par pontage (40). Les puces (30) peuvent être couvertes par une encapsulation transmettant la lumière. L’unité d’éclairage bénéficie d’une construction efficace, et de bonnes caractéristiques de dissipation thermale.

Luminescent element

The invention discloses a luminescent element for high-voltage alternating current. The luminescent element comprises a sub-carrier, at least one electronic element, a plurality of light emitting diode array chips, at least one welding pad and a conductive line, wherein the electronic element is arranged on the sub-carrier; the light emitting diode array chips are arranged on the sub-carrier; the welding pad is arranged on the sub-carrier; and the conductive line is arranged on the sub-carrier. The electronic element, the light emitting diode array chips and the welding pad are electrically connected by the conductive line. The distance between any two adjacent light emitting diode array chips is greater than 100 micrometers, thereby enhancing the heat radiating efficiency of the luminescent element.

Stacked electronic part

Light emitting device and phosphor for the same

CHIP PACKAGE, METHOD OF FORMING A CHIP PACKAGE AND METHOD OF FORMING AN ELECTRICAL CONTACT

Package structure and packaging method

High-brightness white-light LED and manufacturing method thereof

The invention discloses a high-brightness white-light LED and a manufacturing method thereof. The LED comprises a blue-light LED chip with a horizontal structure, a light reflecting cup, a conducting wire and an illuminator, wherein the LED chip is fixed in the light reflecting cup, the illuminator covers the LED chip, the LED chip is fixed at the cup bottom of the light reflecting cup by bottom glue, the bottom glue is fluorescent bottom glue with high heat conductivity, a light guide structure which enables emitting light from the LED chip to be led out to an outside space is arranged between the LED chip and the cup bottom of the light reflecting cup, one side of the LED chip, which is opposite to the cup bottom of the light reflecting cup, is provided with an outer fluorescent layer, and the anode and the cathode of the LED chip are electrically connected with an external positive electrode and an external negative electrode by the conducting wire respectively. The invention can effectively ...

Light emitting diode and manufacturing method thereof

Systems and methods for application of optical materials to optical elements

Methods are disclosed including heating an optical element. An optical material is applied to the heated optical element to provide a conformal layer that is cured via the thermal energy in the heated optical element.

LED wafer package and manufacturing method thereof

Surface mounting device

High-heat-resistant semiconductor device

Light emitted semiconductor assembly package structure and producing method thereof

Luminous diode lamp

Electronic power module for on-board equipment on aircraft, has coating made of polyxylylene layer arranged to provide distribution of mechanical and thermomechanical stresses in vicinity of connection of power component to circuit

Module électronique comportant un circuit (1) ayant au moins un composant de puissance (11, 12) relié au circuit, le circuit étant recouvert d'un revêtement d'isolement électrique et d'étanchéité, caractérisé en ce que le revêtement est une couche de polyxylylène (30) agencée pour assurer une répartition de contraintes mécaniques et thermomécaniques au moins au voisinage de la liaison du composant de puissance au circuit.

DEVICE COMPRISING AN ELECTRONIC CIRCUIT MOUNTED ON A FLEXIBLE SUPPORT AND THE FLEXIBLE BOARD COMPRISING

A METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES

IMPROVED SEMICONDUCTOR ELEMENT

DETECTING DEVICE OF SEMICONDUCTOR TYPE

Process of encapsulation of components or modules electronic and component or moduleselectronic encapsulated by the aforementioned process

La présente invention se rapporte à un procédé d'encapsulation de composants ou de modules électroniques, notamment de cartes électroniques et aux composants ou modules électroniques encapsulés par ledit procédé. L'invention a principalement pour objet un procédé d'encapsulation de composants ou de modules électroniques comprenant les étapes de dépôt d'une pluralité de couches organiques, caractérisé en ce qu'il comporte les étapes consistant à déposer sur le composant ou le module électronique au moins deux couches organiques rigides (14', 15', 18') consécutives mutuellement solidarisées. La présente invention s'applique à l'encapsulation dans un enrobage protecteur des composants et des modules électroniques. La présente invention s'applique principalement aux composants et modules électroniques pour usage militaire, notamment électronique pour projectiles, aéronautique et spatiale.

Optical semiconductor device, has IC chip casing enclosing optical sensors

Dispositif semi-conducteur optique comprenant une puce de circuits intégrés présentant dans sa face avant un capteur optique, une plaque support sur une face avant de laquelle est fixée la face arrière de la puce et des moyens de connexion électrique de la puce à la plaque support, comprenant un anneau de protection (7) fixé sur la face avant de la puce (3), autour et à distance du capteur optique (6), et un anneau (13) en une matière d'enrobage entourant la périphérie de la puce et s'étendant entre la face avant de la plaque support (2) et ledit anneau de protection.

Fabrication of micromachined sensors with insulating protection of the electrical connections for use in severe environments

L'invention concerne les capteurs de grandeurs physiques tels que les capteurs de pression ou d'accélération, et plus précisément le montage de la partie active du capteur sur une embase (30) portant des broches de connexion (32). Selon l'invention, on prépare une partie active du capteur, composée par exemple de plaques de silicium micro-usinées (10, 12) portant des éléments électroniques, des conducteurs électriques, et des plots de connexion (22). On prépare aussi une embase (30) pourvue de broches (32) et on relie électriquement les plots (22) aux extrémités de broche par des éléments conducteurs (fils 40). Puis on plonge la plaque et les extrémités de broche dans un bain électrolytique, de manière à effectuer un dépôt électrolytique de métal conducteur (42) sur les extrémités de broche, les plots, et les éléments conducteurs qui les relient; enfin on effectue une oxydation ou nitruration de ce métal pour constituer un revêtement isolant (44) sur les extrémités de broches de connexion ...

Dispositif comportant un circuit electronique monte sur un support souple et carte souple le comprenant

Un circuit electronique 10 est monte solidairement sur un support souple 20, 40 comportant au moins une piste conductrice 40 a laquelle une face superieure du circuit 10 est reliee par au moins un fil conducteur 60. Une face dite inferieure du circuit 10 est solidaire 30, 31 du support souple 20, 40 grace a une colle conductrice 30, 31. Une resine 71 est disposee sur au moins deux bords lateraux opposes du circuit 10 et deborde au moins partiellement sur les bords lateraux adjacents auxdits bords lateraux, de maniere a solidariser les bords lateraux du circuit 10 et le support 20, 40 sans enrober aucun fil conducteur 60. Une carte souple comporte un logement 101 dans lequel le dispositif est susceptible d'etre colle.

Device comprising an electronic circuit mounted on a flexible support and flexible board comprising it

PLASTICS ENCAPSULATED SEMICONDUCTOR DEVICES

METHOD OF PROTECTION OF SEMICONDUCTOR JUST CIRCUITS AGAINST THE PARTICLES ALPHA AND DEVICES OBTAINED

Encapsulated semiconductor devices prodn - using cored polybutadiene mate-rial

DOUBLE-SIDED FLUIDIC COMPONENTS

L'invention concerne un composant fluidique caractérisé en ce qu'il comporte : - au moins un substrat (32) en un matériau pouvant être gravé, et une couche d'arrêt (34) de gravure de ce matériau, - des moyens (38) de détection de propriétés d'un fluide et/ou d'activation de ce fluide, réalisés sur un premier côté de ladite couche d'arrêt de gravure, - des moyens (40) pour recevoir ledit fluide, réalisés dans le substrat, d'un deuxième côté de la couche d'arrêt de gravure.

IMPROVED SEMICONDUCTOR ELEMENT

Method for encapsulating electronic components or modules and components or electronic modules encapsulated by said method.

Method for encapsulating electronic components or modules and components or electronic modules encapsulated by said method.

Method for encapsulating electronic components or modules and components or electronic modules encapsulated by said method.

Method for encapsulating electronic components or modules and components or electronic modules encapsulated by said method.

Method for encapsulating electronic components or modules and components or electronic modules encapsulated by said method.

Method for encapsulating electronic components or modules and components or electronic modules encapsulated by said method.

White Semiconductor Light Emitting Device using Borate Type Red Phosphor

LIGHT EMITTING APPARATUS

Method for packaging light emitting device without wire bonding

LIGHT-EMITTING SEMICONDUCTOR COMPONENT WITH LUMINESCENCE CONVERSION ELEMENT

LIGHT-EMITTING SEMICONDUCTOR COMPONENT WITH LUMINESCENCE CONVERSION ELEMENT

BLUE-GREEN AND GREEN PHOSPHORS FOR LIGHTING APPLICATIONS

... 본 발명의 실시양태는 청색 또는 청색-녹색 광을 발생시키기 위해 조명 시스템에서 사용될 수 있는 인광체(22)의 관련 패밀리를 제공한다. 인광체(22)는 하기 화학식 1의 인광체를 포함한다: 상기 식에서, x는 0 Подробнее

발광소자 패키지

... 실시 예는, 발광소자, 상기 발광소자가 배치된 리드프레임을 포함하고, 캐비티가 형성된 몸체, 상기 리드프레임과 전기적으로 연결된 와이어 및 상기 와이어의 일측을 감싸고, 상기 리드프레임 상에 배치되는 코딩부재를 포함하는 발광소자 패키지를 제공한다.

Chip stack package

LED PACKAGE

Packaged light emitting diodes including phosphor coating and phosphor coating systems

Light emitting structures are disclosed that can include a semiconductor light emitting diode (LED) that includes a p-n junction active layer. A first layer can include a binder material having a thickness that is less than about 1000 μm, wherein the first layer is directly on the LED. A second layer can include phosphor particles, where the second layer can have a thickness that is less than about 1000 μm and can be directly on the first layer so that the first layer is between the LED and the second layer.

Surface-modified silicate luminophores

A surface-modified silicate luminophore includes a silicate luminophore and a coating includes at least one of (a) a fluorinated coating including a fluorinated inorganic agent, a fluorinated organic agent, or a combination of fluorinated inorganic and organic agents, the fluorinated coating generating hydrophobic surface sites and (b) a combination of the fluorinated coating and at least one moisture barrier layer. The moisture barrier layer includes MgO, Al 2 O 3 , Y 2 O 3 , La 2 O 3 , Gd 2 O 3 , Lu 2 O 3 , and SiO 2 or the corresponding precursors, and the coating is disposed on the surface of the silicate luminophore.

Semiconductor device and test system for the semiconductor device

A semiconductor package including a stress mitigation unit that mitigates stress to the semiconductor chip. The semiconductor package includes a substrate, a semiconductor chip on the substrate, an encapsulation member formed on the substrate and covering the first semiconductor chip, and the stress mitigation unit mitigating stress from a circumference of the first semiconductor chip to the first semiconductor chip. The stress mitigation unit includes at least one groove formed in the encapsulation member.

Led package, and mold and method of manufacturing the same

The present disclosure provides a light emitting diode (LED) package, which includes a first substrate with electrodes disposed on a top thereof and a second substrate with an LED chip disposed on a top thereof. The LED chip is connected with the electrodes via wires. A first package layer is disposed on the top of the first substrate to cover the wires and electrodes. A fluorescent layer is disposed on the top of the second substrate to cover the LED chip. The present disclosure also provides a mold and a method of manufacturing the LED package.

Integrated circuit tampering protection and reverse engineering prevention coatings and methods

A method of protecting an electronics package is discussed along with devices formed by the method. The method involves providing at least one electronic component that requires protecting from tampering and/or reverse engineering. Further, the method includes mixing into a liquid glass material at least one of high durability micro-particles or high-durability nano-particles, to form a coating material. Further still, the method includes depositing the coating material onto the electronic component and curing the coating material deposited.

Semiconductor chip assembly with bump/base/ledge heat spreader, dual adhesives and cavity in bump

A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and dual adhesives. The heat spreader includes a bump, a base and a ledge. The conductive trace includes a pad and a terminal. The semiconductor device is mounted on the bump in a cavity in the bump, is electrically connected to the conductive trace and is thermally connected to the heat spreader. The bump extends into an opening in the first adhesive and is aligned with and spaced from an opening in the second adhesive. The base and the ledge extend laterally from the bump. The first adhesive is sandwiched between the base and the ledge, the second adhesive is sandwiched between the conductive trace and the ledge and the ledge is sandwiched between the adhesives. The conductive trace is located outside the cavity and provides signal routing between the pad and the terminal.

Atomic layer deposition encapsulation for power amplifiers in rf circuits

Power amplifiers and methods of coating a protective film of alumina (Al 2 O 3 ) on the power amplifiers are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the power amplifier in a precisely controlled manner. Thus, the ALD process can form a uniform film that is substantially free of free of pin-holes and voids.

Cerium and Europium Doped Phosphor Compositions and Light Emitting Devices Including the Same

Compounds of Formula I, which include both cerium and europium, may be useful as phosphors in solid state light emitting devices. Light emitting devices including such phosphors may emit warm white light.

Light source with tunable cri

A light-emitting device with at least two light-emitting dies encapsulated with two different types of the wavelength-converting materials is disclosed. Each of the wavelength-converting materials is configured to produce a visible light from a narrow band light near UV region produced by the light-emitting dies, but with different correlated color temperatures (CCT) and different spectral contents. The combination of the two visible light forms the desired visible white light. The Color rendering index of the light-emitting device is tunable by adjusting the supply current to the light-emitting dies. In another embodiment, a light module with tunable CRI for an illumination system is disclosed.

Methods for manufacturing superjunction semiconductor device having a dielectric termination

A superjunction semiconductor device is provided having at least one column of a first conductivity type and at least one column of a second conductivity type extending from a first main surface of a semiconductor substrate toward a second main surface of the semiconductor substrate opposed to the first main surface. The at least one column of the second conductivity type has a first sidewall surface proximate the at least one column of the first conductivity type and a second sidewall surface opposed to the first sidewall surface. A termination structure is proximate the second sidewall surface of the at least one column of the second conductivity type. The termination structure includes a layer of dielectric of an effective thickness and consumes about 0% of the surface area of the first main surface. Methods for manufacturing superjunction semiconductor devices and for preventing surface breakdown are also provided.

(halo)silicate-based phosphor and manufacturing method of the same

Disclosed are a (halo)silicate-based phosphor and a manufacturing method of the same. More particularly, the disclosed phosphor is a novel (halo)silicate-based phosphor manufactured by using a (halo)silicate-based host material containing an alkaline earth metal, and europium as an activator.

Light emitting device package and manufacturing method thereof

A light emitting device (LED) package and a manufacturing method thereof are provided. The LED package includes a circuit board comprising at least one device region, a plurality of electrode regions, at least one first thermal via exposed through upper and lower surfaces of the at least one device region, and a plurality of second thermal vias exposed through upper and lower surfaces of the plurality of electrode regions; at least one first thermal pad bonded to the upper surface of the at least one device region and connected to the first thermal via; at least one LED mounted on the at least one first thermal pad; a plurality of first electrode pads bonded to the upper surface of the electrode region and connected to the second thermal vias; and a plurality of wires to connect the at least one LED with the plurality of first electrode pads.

Integrated circuit package system with removable backing element having plated terminal leads and method of manufacture thereof

A method of manufacture of an integrated circuit package system includes: attaching a first die to a first die pad; connecting electrically a second die to the first die through a die interconnect positioned between the first die and the second die; connecting a first lead adjacent the first die pad to the first die; connecting a second lead to the second die, the second lead opposing the first lead and adjacent the second die; and providing a molding material around the first die, the second die, the die interconnect, the first lead and the second lead, with a portion of the first lead exposed.

Methods and devices for rescuing a distressed diver

The invention discloses devices and methods for identifying a diver in distress and initiating a rescue response. Specifically, embodiments of the present invention allow for identification of a diver who is not breathing properly and in response giving local stimuli to allow the diver to response. Should he/she not respond, the instant invention will initiate steps to bring the diver back to the water surface and alert others as to his/her need of assistance.

White light emitting lamp and white led lighting apparatus including the same

An object is to provide a white light emitting lamp 1 comprising: a semiconductor light emitting element 2 which is placed on a board 3 and emits ultraviolet light or blue light; and a light emitting portion that is formed so as to cover a light emitting surface of the semiconductor light emitting element 2 , the light emitting portion containing a blue phosphor B, a green phosphor G, a red phosphor R and a deep red phosphor DR that are excited by the light emitted from the semiconductor light emitting element 2 to respectively emit blue light, green light, red light and a deep red light, the white light emitting lamp 1 emitting white light by mixing light emission colors from the blue phosphor B, the green phosphor G, the red phosphor R and a deep red phosphor DR with one another, wherein the deep red phosphor DR has a main emission peak in a longer wavelength region than a main emission peak of the red phosphor, the red phosphor R comprises at least one component selected from: a europium-activated SiAlON phosphor and a europium-activated CASN phosphor each having a predetermined composition, while the deep red phosphor DR comprises a manganese-activated magnesium florogermanate phosphor having a predetermined composition. According to the above white light emitting lamp, when the BGR phosphor is used in combination with the semiconductor element such as an LED or the like, and a deep red phosphor DR having a predetermined composition is further added in addition to the red phosphor R, so that luminance characteristics can be improved, whereby there can be provided a white light emitting lamp excellent in both high luminance and high color rendering properties.

Light emitting device and method for manufacturing the same

A light emitting device 10 includes a light emitting element 11 , a package 13 in which the light emitting element 11 is accommodated, and a sealing member 14 configured to seal the light emitting element 11 . The package 13 includes a base 13 B configured to hold the light emitting element 11 and a frame part 13 A vertically standing on the base 13 B so as to surround the light emitting element 11 . The sealing member 14 is embedded in a region surrounded by the frame part 13 A. The frame part 13 A includes a protruding wall 15 upwardly protruding from an upper end surface 132 a of the frame part 13 A and provided so as to surround the light emitting element 11.

Solid state light sources based on thermally conductive luminescent elements containing interconnects

Solid state light sources based on LEDs mounted on or within thermally conductive luminescent elements provide both convective and radiative cooling. Low cost self-cooling solid state light sources can integrate the electrical interconnect of the LEDs and other semiconductor devices. The thermally conductive luminescent element can completely or partially eliminate the need for any additional heatsinking means by efficiently transferring and spreading out the heat generated in LED and luminescent element itself over an area sufficiently large enough such that convective and radiative means can be used to cool the device.

Semiconductor light emitting module and method of manufacturing the same

Provided are a semiconductor light emitting module and a method of manufacturing the same, which allow achieving high luminance light emission as well as lightweight and compact features. In a semiconductor light emitting module ( 101 ), a projecting portion ( 202 ) serving as a reflecting member is formed on a metal thin plate ( 102 ) to surround a semiconductor light emitting element ( 104 ). The semiconductor light emitting element ( 104 ) is connected to a printed board ( 103 ) by using a wire ( 201 ), for example. The projecting portion ( 202 ) is formed by pressing and bending the metal thin plate ( 102 ) from a back surface, for example, to surround the element and to be higher than the semiconductor light emitting element ( 104 ).

Methods of manufacturing semiconductor device assemblies including face-to-face semiconductor dice

Methods of manufacturing semiconductor device assemblies include attaching a back side of a first semiconductor die to a substrate and structurally and electrically coupling a first end of laterally extending conductive elements to conductive terminals on or in a surface of the substrate. Second ends of the laterally extending conductive elements are structurally and electrically coupled to bond pads on or in an active surface of the first semiconductor die. Conductive structures are structurally and electrically coupled to bond pads of a second semiconductor die. At least some of the conductive structures are aligned with at least some of the bond pads of the first semiconductor die. An active surface of the second semiconductor die faces an active surface of the first semiconductor die. At least some of the conductive structures are structurally and electrically coupled to at least some of the bond pads of the first semiconductor die.

Microelectro mechanical system encapsulation scheme

A microelectro mechanical system (MEMS) assembly includes a carrier and a MEMS device disposed over the carrier. A buffer layer is disposed over the MEMS device. The Young's modulus of the buffer layer is less than that of the MEMS device.

Solid state apparatus

A solid state apparatus comprising, a printed circuit board having a first and a second surface that are opposite surfaces, a semiconductor chip for imaging arranged on the first surface, a sealing resin arranged to cover the printed circuit board and the semiconductor chip, and a translucent member arranged on the sealing resin, the solid state apparatus having a first region located inward of an outer edge of the semiconductor chip, and a second region located outward of the outer edge, the printed circuit board comprising, on the first surface, a first terminal electrically connected to the semiconductor chip, and comprising, on the second surface, a second terminal electrically connected to the first terminal within the printed circuit board, the second terminal being arranged in the first region.

Thin film light emitting diode

Light emitting devices comprise a substrate having a surface and a side surface; a semiconductor structure on the surface of the substrate, the semiconductor structure having a first surface, a second surface and a side surface, wherein the second surface is opposite the first surface, wherein the first surface, relative to the second surface, is proximate to the substrate, and wherein the semiconductor structure comprises a first-type layer, a light emitting layer and a second-type layer; a first and a second electrodes; and a wavelength converting element arranged on the side surface of the semiconductor structure, wherein the wavelength converting element has an open space, and wherein the open space is a portion not covered by the wavelength converting element.

Sapphire substrate configured to form light emitting diode chip providing light in multi-directions, light emitting diode chip, and illumination device

A sapphire substrate configured to form a light emitting diode (LED) chip providing light in multi-directions, a LED chip and an illumination device are provided in the present invention. The sapphire substrate includes a growth surface and a second main surface opposite to each other. A thickness of the sapphire substrate is thicker than or equal to 200 micrometers. The LED chip includes the sapphire substrate and at least one LED structure. The LED structure is disposed on the growth surface and forms a first main surface where light emitted from with a part of the growth surface without the LED structures. At least a part of light beams emitted from the LED structure pass through the sapphire substrate and emerge from the second main surface. The illumination device includes at least one LED chip and a supporting base. The LED chip is disposed on the supporting base.

Parallel plate slot emission array

Parallel plate slot emission array. In accordance with an embodiment of the present invention, an article of manufacture includes a side-emitting light emitting diode configured to emit light from more than two surfaces. The article of manufacture includes a first sheet electrically and thermally coupled to a first side of the light emitting diode, and a second sheet electrically and thermally coupled to a second side of the light emitting diode. The article of manufacture further includes a plurality of reflective surfaces configured to reflect light from all of the surfaces of the light emitting diode through holes in the first sheet. The light may be reflected via total internal reflection.

Semiconductor package and method of fabricating the same

A semiconductor package includes a first semiconductor chip including a first chip pad located on an upper surface thereof, a second semiconductor chip offset-stacked on the upper surface of the first semiconductor chip and including a second chip pad located on an upper surface thereof, a chip coupling ball located on a first board pad of the first semiconductor chip, a chip coupling bump located on a second board pad of the second semiconductor chip, and a chip connection wire connecting the chip coupling ball and the chip coupling bump. The chip connection wire has a chip connection curve part with a reverse curve shape.

Light-emitting device

A light-emitting device including: a base; light-emitting elements arranged on the base at intervals in an array along a predetermined direction of the base; and conductive-wiring parts formed on first and second sides of the array of the light-emitting elements on the base. The conductive-wiring parts are discretely formed along the predetermined direction of the base, each of the conductive-wiring parts relaying electricalconnection between the light-emitting elements, and the number of the conductive-wiring parts arranged per light-emitting element on each of the first and second sides of the array of the light-emitting elements is two or more.

Housing And Method To Control Solder Creep On Housing

An acoustic device includes a substrate, a substrate cover, and a plurality of electrical and acoustic components. The substrate cover is disposed on the substrate and the plurality of electrical and acoustic components are disposed on the substrate and under the substrate cover. The substrate cover is constructed of a base metal and the substrate cover comprises a partially plating. The partial plating is arranged so as to prevent solder creep along a surface of the substrate cover.

Light emitting devices having shielded silicon substrates

Light emitting devices comprise a light emitting component, such as a GaN LED having active material layers supported by a Silicon substrate, which can be a growth substrate, or attached. Phosphor(s) can be disposed relative to the light emitting component to absorb a primary emission, and produce a secondary emission that can be relatively tuned or selected so that their combination produces light of a desired spectrum, such as light appearing white. The Silicon substrate has exposed sidewalls, which can be angled, with respect to planar surfaces of the substrate, and a light reflecting material, such as a diffusely reflective material coats the sidewalls. The reflective material can be opaque to the primary and secondary emissions. If other exposed portions of the Silicon substrate exist and are exposed to primary or secondary light, these other exposed portions can be coated with such light reflecting material.

Light emitting device and lighting system including the same

Disclosed is a light emitting device. The light emitting device includes: a body including a cavity having first and second inner sides opposite to each other and third and fourth inner sides connected to first and second inner sides and opposite to each other; a first lead frame extending from a bottom of cavity under a first inner side of cavity; a second lead frame extending from the bottom of cavity under a second inner side of cavity; a gap part in the bottom of cavity between first and second lead frames; a light emitting chip on first lead frame; a protective chip on the second lead frame; a recess region recessed outward of body from at least one of third and fourth inner sides of cavity; and a first wire connected to the second frame disposed between light emitting chip and a sidewall of the recess region.

Resin-sealed electronic control device

The present invention is intended to increase the moisture resistance of a resin-sealed electronic control device. The resin-sealed electronic control device includes: a semiconductor chip; a chip capacitor; a chip resistor; a bonding member; a substrate; a case; a heat radiating plate; a glass coating; and a first sealing material. The glass coating directly covers the electronic circuit formed by the element group including: the semiconductor chip; the chip capacitor; and the chip resistor, the bonding member and the substrate, and is sealed by the first sealing material. By being water impermeable, the glass coating prevents water absorption in the vicinity of the element group, and can prevent an increase in the leak current of the semiconductor chip due to water absorption, and an insulation performance drop such as lowered insulation resistance caused by migration within the element group.

SEMICONDUCTOR DEVICE

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film. 1. A semiconductor device comprising:an interlayer insulating film formed on a semiconductor substrate;an uppermost layer wiring made of copper and formed on the interlayer insulating film;a passivation film formed on the uppermost layer wiring and selectively exposing a top surface of the uppermost layer wiring as an electrode pad; anda bonding wire made of copper and bonded directly to the electrode pad.2. The semiconductor device according to claim 1 , wherein the bonding wire is stitch bonded directly to the electrode pad.3. The semiconductor device according to claim 1 , wherein the bonding wire is bonded to the electrode pad by a stud bump.4. The semiconductor device according to claim 1 , wherein a thickness of the electrode pad is no less than 10 μm.5. The semiconductor device according to claim 1 , wherein a thickness of the electrode pad is 10 μm to 15 μm.6. The semiconductor device according to claim 1 , further comprising a lower layer wiring covered with the interlayer insulating film claim 1 , whereinthe uppermost layer wiring includes a protrusion extending inside the interlayer insulating film,the lower layer wiring is electrically connected to the electrode pad via a pathway including the protrusion.7. The ...

SEMICONDUCTOR LIGHT EMITTING ELEMENT WITH DISPERSIVE OPTICAL UNIT AND ILLUMINATION DEVICE COMPRISING THE SAME

A semiconductor light emitting element includes a transparent substrate and a plurality of light emitting diode (LED) chips. The transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED structures are disposed on the support surface and form a first main surface where light emitted from with a part of the support surface without the LED structures. Each of the LED structures includes a first electrode and a second electrode. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface. An illumination device includes the semiconductor light emitting element and a supporting base. The semiconductor light emitting element is disposed on the supporting base, and an angle is formed between the semiconductor light emitting element and the supporting base. 1. A semiconductor light emitting element , comprising:a transparent substrate, having a support surface and a second main surface disposed opposite to each other;a light emitting diode (LED) structure disposed on the support surface, a first main surface, where light emitted from, being formed by the LED structure and at least a part of the support surface without the LED structure, and at least a part of the light emitted from the LED structure may pass through the transparent substrate and emerge from the second main surface; andan optical unit disposed on the first main surface, the optical unit comprising a covering side facing the transparent substrate, and a light dispersion side corresponding to the covering surface;wherein the optical unit further comprises at least one optical structure disposed on the light dispersion side to disperse light received from the covering side to different directions corresponding to wavelength of the light.2. The semiconductor light emitting element of claim 1 , further comprising:a wavelength conversion layer sandwiched by the optical ...

LIGHT EMITTING DEVICE

A light emitting device includes a base member, a light emitting element, a wire, a protective film, first and second resin members, and a light shielding portion. The base member has a conductive member. The wire connects the light emitting element and the conductive member. The protective film covers the conductive member to be spaced apart from a portion of a connecting portion. The first resin member continuously covers at least a portion of each of the protective film, a portion of the conductive member around the connecting portion, and the wire. The first resin member contains first light reflecting particles to reflect light emitted by the light emitting element. The second resin member covers the light emitting element and the first resin member. The light shielding portion is disposed on the base member and disposed on a line connecting the light emitting element and the first resin member. 1. A light emitting device comprising:a base member having a conductive member containing silver;a light emitting element disposed on the base member;a wire electrically connecting the light emitting element and the conductive member;a protective film covering the conductive member so as to be spaced apart at least from a portion of a connecting portion connecting the wire and the conductive member; anda first resin member continuously covering at least a portion of each of the protective film, a portion of the conductive member around the connecting portion, and the wire, the first resin member containing first light reflecting particles to reflect light emitted by the light emitting element;a second resin member covering the light emitting element and the first resin member; anda light shielding portion disposed on at least a portion of a surface of the base member, the light shielding portion being disposed on a line connecting the light emitting element and the first resin member.2. The light emitting device according to claim 1 , wherein a material of the second ...

Light emitting device

A light emitting device comprising: a package having a recess; a light emitting element mounted in the recess of the package; a transmissive member provided above the light emitting element; a sealing resin that seals the recess of the package; a first fluorescent material contained in the transmissive member; and a second fluorescent material contained in the sealing resin and having a specific gravity different from that of the first fluorescent material, wherein a greater amount of the second fluorescent material is distributed to a side of the light emitting element than above the light emitting element, and a side surface of the light emitting element is exposed on the sealing resin.

Ion sensor based on differential measurement, and production method

Ion sensor based on differential measurement comprising an ISFTET-REFET pair wherein the REFET is defined by a structure composed of an ISFET covered by a microreservoir where an internal reference solution is contained. The sensor comprises a first and a second ion-selective field effect transistor, an electrode, a substrate on the surface whereof are integrated the two transistors, connection tracks and the electrode and a structure adhered on the first ion-selective field effect transistor which creates a microreservoir on the gate of said first transistor, with the microreservoir having a microchannel which connects the microreservoir with the exterior and the microreservoir being filled with the reference solution.

Light emitter devices and methods for light emitting diode (led) chips

Light emitter devices for light emitting diodes (LED chips) and related methods are disclosed. In one embodiment a light emitter device includes a substrate and a chip on board (COB) array of LED chips disposed over the substrate. A layer having wavelength conversion material provided therein is disposed over the array of LED chips for forming a light emitting surface from which light is emitted upon activation of the LED chips. In some aspects, the wavelength conversion material includes phosphoric or lumiphoric material that is settled and/or more densely concentrated within one or more predetermined portions of the layer. In some aspects, the devices and methods provided herein can comprise a lumen density of approximately 30 lm/mm 2 or greater.

ELECTRONIC DEVICE PACKAGE

Electronic device package technology is disclosed. An electronic device package in accordance with the present disclosure can include a substrate, a plurality of electronic components in a stacked relationship, and an encapsulant material encapsulating the electronic components. Each of the electronic components can be electrically coupled to the substrate via a wire bond connection and spaced apart from an adjacent electronic component to provide clearance for the wire bond connection. The encapsulant can be disposed between center portions of adjacent electronic components. Associated systems and methods are also disclosed. 1. An electronic device package , comprising:a substrate;a plurality of electronic components in a stacked relationship, each of the electronic components being electrically coupled to the substrate via a wire bond connection and spaced apart from an adjacent electronic component to provide clearance for the wire bond connection; andan encapsulant material encapsulating the electronic components, wherein the encapsulant is disposed between center portions of adjacent electronic components.2. The electronic device package of claim 1 , further comprising at least one spacer separating adjacent electronic components from one another to provide clearance for the wire bond connections.3. The electronic device package of claim 2 , wherein the at least one spacer comprises a polymer.4. The electronic device package of claim 3 , wherein the polymer comprises a thermoset polymer claim 3 , a thermoplastic polymer claim 3 , or a combination thereof.5. The electronic device package of claim 3 , wherein the polymer comprises an epoxy.6. The electronic device package of claim 2 , wherein the at least one spacer comprises a bump configuration.7. The electronic device package of claim 6 , wherein the bump configuration comprises an elongated bump configuration.8. The electronic device package of claim 6 , wherein the bump configuration comprises a dot bump ...

ION SENSOR BASED ON DIFFERENTIAL MEASUREMENT, AND PRODUCTION METHOD

Ion sensor based on differential measurement comprising an ISFTET-REFET pair wherein the REFET is defined by a structure composed of an ISFET covered by a microreservoir where an internal reference solution is contained. The sensor comprises a first and a second ion-selective field effect transistor, an electrode, a substrate on the surface whereof are integrated the two transistors, connection tracks and the electrode and a structure adhered on the first ion-selective field effect transistor which creates a microreservoir on the gate of said first transistor, with the microreservoir having a microchannel which connects the microreservoir with the exterior and the microreservoir being filled with the reference solution. 119-. (canceled)20. An ion sensor based on differential measurement comprising:a substrate whereon are integrated connection tracks;an electrode of a conductor material arranged to be in contact with a solution to measure;a first ion-selective field effect transistor and a second ion-selective field effect transistor electrically connected by the connection tracks to an ion measurement system, each of the first and second ion-selective field effect transistors being fixed on the substrate and having a gate;a structure coupled only on the first ion-selective field effect transistor configured to create a microreservoir on the gate of the first ion-selective field effect transistor, wherein the gate of the first ion-selective field effect transistor is arranged to be in contact with a reference solution and the gate of the second ion-selective field effect transistor is arranged to be in contact with the solution to measure; andat least one microchannel connecting the microreservoir with the exterior of the ion sensor through an outlet orifice of the at least one microchannel, the at least one microchannel configured to calibrate the ion sensor by filling or renewing the microreservoir with the reference solution and comprising a first longitudinal ...

Light-emitting device

A light-emitting device includes a semiconductor light-emitting element and a fluorescent member which emits fluorescent light when irradiated with light from the semiconductor light-emitting element. The fluorescent member includes (i) oxygen-proof resin having no permeability to oxygen and (ii) resin which includes semiconductor particles having different excitation fluorescence spectra according to particle diameter and is encased in the oxygen-proof resin.

Multi-element led lamp

A light emitting diode device (e.g., LED package) may include at least two light emitting devices that can be switched independently of one another and thus may be useful in vehicular lighting applications, for example low and high beam headlights. A LED device may include a first LED die and at least one additional LED die disposed at different positions within a common reflector cup or relative to a common lens. Multiple LED sub-assemblies may be mounted to a common lead frame along non-coincident principal axes. Methods for varying intensity or color from multi-LED lamps are further provided.

METHOD FOR ASSEMBLING A MICROELECTRONIC CHIP ELEMENT ON A WIRE ELEMENT, AND INSTALLATION ENABLING ASSEMBLY TO BE PERFORMED

Method for assembling includes: providing a system to transfer wire element from wire element supply device to wire element storage device; stretching wire element between supply and storage devices by tensioning; providing an individualized reservoir and separated chip elements, each including a connection terminal including a top with free access facing in which chip element is not present; transporting the chip element from reservoir to an assembly area between supply and storage devices in which wire element is tightly stretched in assembly area; fixing electrically conducting wire element to chip element connection terminal in assembly area; and adding electrically insulating material on chip element after latter has been fixed to wire element forming a cover, the addition of material being performed on surface of chip element including connection terminal fixed to wire element to cover at least the connection terminal and portion of wire element at fixing point of latter. 115-. (canceled)16. A method for assembling a microelectronic chip element on an electrically conducting wire element , comprising the following steps:providing a transfer system of the wire element from a wire element supply device to a storage device of said wire element,stretching of the wire element between the supply device and the storage device by a tensioning device,providing a reservoir of individualized and separated chip elements, each chip element comprising a connection terminal, the connection terminal of each chip element comprising a top with free access facing which no part of the chip element is present,transporting a chip element from the reservoir to an assembly area located between the supply device and storage device in such a way that the wire element is tightly stretched in said assembly area,fixing the electrically conducting wire element to the connection terminal of the chip element in the assembly area,performing addition of electrically insulating material on the ...

ION SENSOR BASED ON DIFFERENTIAL MEASUREMENT, AND PRODUCTION METHOD

Ion sensor based on differential measurement comprising an ISFTET-REFET pair wherein the REFET is defined by a structure composed of an ISFET covered by a microreservoir where an internal reference solution is contained. The sensor comprises a first and a second ion-selective field effect transistor, an electrode, a substrate on the surface whereof are integrated the two transistors, connection tracks and the electrode and a structure adhered on the first ion-selective field effect transistor which creates a microreservoir on the gate of said first transistor, with the microreservoir having a microchannel which connects the microreservoir with the exterior and the microreservoir being filled with the reference solution. 119-. (canceled)20. A device comprising an ion sensor based on differential measurement , wherein the sensor comprises:(i) a substrate whereon are integrated connection tracks;(ii) an electrode of a conductor material arranged to be in contact with a solution to measure;(iii) a first ion-selective field effect transistor and a second ion-selective field effect transistor electrically connected by the connection tracks to an ion measurement system, each of the first and second ion-selective field effect transistors being fixed on the substrate and having a gate;(iv) a structure coupled only on the first ion-selective field transistor configured to create a microreservoir on the gate of the first ion-selective field effect transistors, wherein the gate of the first ion-selective field effect transistor is arranged to be in contact with a reference solution and the gate of the second ion-selective field effect transistor is arranged to be in contact with the solution to measure; and,(v) at least one microchannel connecting the microreservoir with the exterior of the ion sensor through an outlet orifice of the at least one microchannel, the at least one microchannel configured to calibrate the ion sensor by filling or renewing the microreservoir with the ...

Package substrate for optical element and method of manufacturing the same

Disclosed herein is a method of manufacturing a package substrate for optical elements. The method includes the steps of providing a conductive substrate including an insulation layer formed thereon, and forming a circuit layer and electrode pads on the conductive substrate using a plating process. The method further includes selectively plating the circuit layer, in which the optical element is to be mounted, with a conductor to such a thickness that the optical element is buried, forming a cavity space including a lower part and a side wall in the circuit layer, and mounting an optical element in the cavity space and then applying a fluorescent resin layer thereon.

Composition, color converting sheet and light-emitting diode device

The present invention relates to a composition comprising a fluorescent material and a matrix material, a color conversion sheet and a light emitting diode device. The present invention further relates to the use of the composition in a color conversion sheet fabrication process, to the use of the color conversion sheet in optical devices or for agriculture purposes, and to the use of the fluorescent material and the matrix material in light emitting diode devices. Additionally, the invention relates to an optical device comprising the color conversion sheet and to a method for preparing the color conversion sheet and the optical device.

Stack package

A stack package includes a substrate, a stack of semiconductor chips mounted to the substrate, a side semiconductor chip disposed on one side of the stack, and adhesive interposed between the lower surface of the side semiconductor chip and the stack of semiconductor chips and which attaches the side semiconductor chip to the stack.

LIGHT SOURCE ASSEMBLY WITH IMPROVED COLOR UNIFORMITY

A light source assembly comprising: a solid state lighting device; a wavelength converting element arranged to receive light emitted by the solid state lighting device and adapted to convert some of the received light to a different wavelength; and a scattering layer applied to a light emitting surface of the wavelength converting element. The scattering layer is adapted to scatter light back to the wavelength converting element, and a backscattering strength of the scattering layer varies over said light emitting surface so as to reduce variations in the color of the light emitted from the light emitting surface. 1. A light source assembly comprising:a solid state lighting device;a wavelength converting element arranged to receive light emitted by the solid state lighting device and adapted to convert some of the received light to a different wavelength; anda scattering layer applied to a light emitting surface of the wavelength converting element,the scattering layer being adapted to scatter light back to the wavelength converting element, and a backscattering strength of the scattering layer varying over said light emitting surface so as to reduce variations in the color of the light emitted from the light emitting surface.2. The light source assembly according to claim 1 , wherein the scattering layer has a varying density claim 1 , the backscattering strength being determined by said density.3. The light source assembly according to claim 1 , wherein the scattering layer has a varying thickness perpendicular to the light emitting surface claim 1 , the backscattering strength being determined by said thickness.4. The light source assembly according to claim 1 , wherein the scattering layer comprises scattering elements chosen from the group consisting of gas bubbles claim 1 , titanium oxide particles and phosphor particles.510. The light source assembly according to claim 1 , wherein the scattering layer comprises wavelength converting particles ().6. The light ...

Package substrate and chip package using the same

A package substrate is disclosed. The package substrate includes a base layer and a dam structure or a dent structure on at least one side of the base layer. The base layer may be a CCL core, a molding compound, or an epoxy base.

Semiconductor package

A semiconductor package includes a substrate, a semiconductor die, a dummy die, a conductive layer, at least one first conductive wire, and at least one second conductive wire. The semiconductor die is disposed on the substrate. The dummy die is disposed on the semiconductor die. The conductive layer is disposed on the dummy die. The first conductive wire electrically connects the semiconductor die to a signal source. The second conductive wire electrically connects the conductive layer to a ground reference.

Magnetic shielding material with insulator-coated ferromagnetic particles

A non-conductive magnetic shield material is provided for use in magnetic shields of semiconductor packaging. The material is made magnetic by the incorporation of ferromagnetic particles into a polymer matrix, and is made non-conductive by the provision of an insulating coating on the ferromagnetic particles.

Coplanar microfluidic manipulation

An apparatus includes a polymer base layer having a surface. A die that includes a fluid manipulation surface that is substantially coplanar with the surface of the polymer base layer. The die includes a control electrode to generate an electric field to perform microfluidic manipulation of fluid across the fluid manipulation surface of the die.

SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING THE SAME

A semiconductor module includes: a semiconductor device having a front-side electrode; a bonding wire having a bonding portion bonded to the front-side electrode; a first sealing member; and a second sealing member. The first sealing member seals a portion where the front-side electrode and the bonding wire are bonded to each other. The second sealing member covers the first sealing member. The first sealing member is higher than the second sealing member in elastic modulus. 1: A semiconductor module comprising:a semiconductor device having a front-side electrode;a bonding wire having a bonding portion bonded to the front-side electrode;a first sealing member filling a space between the bonding wire and the front-side electrode at a periphery of the bonding portion and having a first elastic modulus; anda second sealing member covering the first sealing member, being in contact with the front-side electrode, and having a second elastic modulus,the first elastic modulus being higher than the second elastic modulus,the front-side electrode having a recess around the bonding portion,the recess being formed away from the bonding portion,the recess being filled with the first sealing member.2: The semiconductor module according to claim 1 , wherein claim 1 , in a plan view claim 1 , the recess is formed so as to surround the bonding portion.3: The semiconductor module according to claim 2 , wherein the recess is continuously formed.4: The semiconductor module according to claim 1 , whereinthe recess has an opening, a side face, and a bottom, andin a plan view, the bottom or at least a part of the side face is located farther from the bonding portion than the opening is from the bonding portion.5: The semiconductor module according to claim 1 , wherein the first sealing member is higher than the second sealing member in electric conductivity.6: The semiconductor module according to claim 1 , wherein the first sealing member is lower than the second sealing member in ...

Light emitting diode (led) components and methods

Light emitting diode (LED) components and related methods are disclosed. LED components include a submount, at least one LED chip on a first surface of the submount, and a light permeable structure or dam. The light permeable dam can provide a component having a viewing angle that is greater than 115°. A method of providing an LED component includes providing a non-metallic submount, attaching at least one LED chip to a first surface of the submount, and dispensing a light permeable dam over the first surface of the submount about the at least one LED chip thereby providing a component having a viewing angle that is greater than 115°.

Semiconductor device

One semiconductor device includes a wiring substrate, a first semiconductor chip that is mounted on one surface of the wiring substrate, a second semiconductor chip that is laminated on the first semiconductor chip so as to form exposed surfaces where the surface of the first semiconductor chip is partially exposed, silicon substrates that are mounted on the exposed surfaces and serve as warping control members, and an encapsulation body that is formed on the wiring substrate so as to cover the first semiconductor chip, the second semiconductor chip and the silicon substrates.

Semiconductor device

A semiconductor device includes a first semiconductor chip and a second semiconductor chip to which different power-supply voltages are supplied, connection bonding wires connecting the first semiconductor chip and the second semiconductor chip to each other, and a sealing resin provided to fill a gap between a first lead frame on which the first semiconductor chip is mounted and a second lead frame on which the second semiconductor chip is mounted so as to cover the respective circumferences of the first semiconductor chip and the second semiconductor chip. The respective surfaces of the first lead frame and the second lead frame in the regions opposed to each other are covered with an insulating protection film including a material having higher electrical breakdown voltage than a material included in the sealing resin.

Semiconductor package having overhang portion

A semiconductor package may include a substrate, and a structural body disposed over the substrate. The semiconductor package may include a semiconductor chip stacked over the structural body, and having an overhang portion projecting over a side surface of the structural body and overhanging out over the side surface of the structural body. The semiconductor package may include one or more bonding pads disposed on the overhang portion, and one or more wires electrically coupling the bonding pads to the substrate. The semiconductor package may include a wire fixing film attached onto the structural body, and overhanging out over the side surface of the structural body to fix the one or more wires.

Integrated circuit shielding technique utilizing stacked die technology incorporating top and bottom nickel-iron alloy shields having a low coefficient of thermal expansion

An integrated circuit shielding technique utilizing stacked die technology incorporating top and bottom nickel-iron alloy shields having a low coefficient of thermal expansion of especial utility in conjunction with magnetoresistive random access memory (MRAM) and other devices requiring magnetic shielding.

Lighting apparatuses and driving methods regarding to light-emitting diodes

Disclosed are a lighting apparatus and its driving method. A disclosed lighting apparatus comprises a blue light-emitting diode die, a red light-emitting diode die, an electrical-connection structure connecting the blue light-emitting diode die and the red light-emitting diode die and having a correlated color temperature T N . A disclosed driving method of a lighting apparatus comprising operating a blue light-emitting diode emitting a first color light with an electrical power W B consumed and operating a red light-emitting diode die emitting a second color light with an electrical power W R consumed, respectively. Then, the correlated color temperature of the lighting apparatus is about T N , and a power ratio R W , the ratio of W B over W R , is about between 7.67*ln(T N )−56.6 and 5.01*ln(T N )−37.2.

Slim led package

Disclosed herein is a slim LED package. The slim LED package includes first and second lead frames separated from each other, a chip mounting recess formed on one upper surface region of the first lead frame by reducing a thickness of the one upper surface region below other upper surface regions of the first lead frame, an LED chip mounted on a bottom surface of the chip mounting recess and connected with the second lead frame via a bonding wire, and a transparent encapsulation material protecting the LED chip while supporting the first and second lead frames.

PROXIMITY DETECTOR DEVICE WITH INTERCONNECT LAYERS AND RELATED METHODS

A proximity detector device may include a first interconnect layer including a first dielectric layer, and first electrically conductive traces carried thereby, an IC layer above the first interconnect layer and having an image sensor IC, and a light source IC laterally spaced from the image sensor IC. The proximity detector device may include a second interconnect layer above the IC layer and having a second dielectric layer, and second electrically conductive traces carried thereby. The second interconnect layer may have first and second openings therein respectively aligned with the image sensor IC and the light source IC. Each of the image sensor IC and the light source IC may be coupled to the first and second electrically conductive traces. The proximity detector device may include a lens assembly above the second interconnect layer and having first and second lenses respectively aligned with the first and second openings. 1. A method of forming a proximity detector device , the method comprising:forming a first interconnect layer comprising a plurality of first electrically conductive traces; an image sensor IC; and', 'a light source IC laterally spaced from the image sensor IC;, 'forming an integrated circuit (IC) layer over the first interconnect layer, the IC layer comprisingforming a second interconnect layer over the IC layer, the second interconnect layer comprising a plurality of second electrically conductive traces and first and second openings having sidewalls defined by dielectric material of the second interconnect layer, the first and second openings respectively aligned with the image sensor IC and the light source IC;filling the first and second openings of the second interconnect layer with a transparent adhesive material, the transparent adhesive material physically contacting the image sensor IC and light source IC;forming a lens assembly over the second interconnect layer, the lens assembly comprising first and second lenses respectively ...

Fluorescent substance and light-emitting device employing the same

The present invention provides a fluorescent substance excellent both in quantum efficiency and in temperature characteristics, and also provides a light-emitting device utilizing the fluorescent substance. This fluorescent substance contains an inorganic compound comprising a metal element M, a trivalent element M 1 other than the metal element M, a tetravalent element M 2 other than the metal element M, and either or both of O and N. In the inorganic compound, the metal element M is partly replaced with a luminescence center element R. The crystal structure of the fluorescent substance is basically the same as Sr 3 Al 3 Si 13 O 2 N 21 , but the chemical bond lengths of M 1 -N and M 2 -N are within the range of ±15% based on those of Al—N and Si—N calculated from the lattice constants and atomic coordinates of Sr 3 Al 3 Si 13 O 2 N 21 , respectively. The fluorescent substance emits luminescence having a peak in the range of 490 to 580 nm when excited with light of 250 to 500 nm.

Image sensor packages

An image sensor package includes a circuit board, an image sensor chip on the circuit board, a stack bump structure on the image sensor chip, a bonding wire connecting the circuit board to the stack bump structure, a dam element on the image sensor chip and covering both the stack bump structure and the bonding wire, and a molding element contacting the dam element on the circuit board and covering both the image sensor chip and the bonding wire.

Fluorophor and method for production thereof and illuminator

A fluorophor includes: α-type sialon crystal which is expressed by a general formula: (Li x1 , Eu x2 ) (Si 12−(m+n) Al m+n )(O n N 16−n ), wherein x1 is an amount of solid solution of Li in a sialon unit cell, and x2 is an amount of solid solution of Eu in the sialon unit cell, wherein the parameters x1, x2, m, and n satisfy: 1.6≦x1≦2.4 (1), 0.001≦x2≦0.4 (2), 1.8≦m≦2.4 (3), 0.8≦n≦1.2 (4), wherein the α-type sialon crystal emits fluorescence with a peak in a wavelength region of from 550 nm to 575 nm upon irradiation of an excitation source.

Chip package, method of forming a chip package and method of forming an electrical contact

In various embodiments, a method of forming an electrical contact is provided. The method may include depositing, by atomic layer deposition, a passivation layer over at least a region of a metal surface, wherein the passivation layer may include aluminum oxide, and electrically contacting the region of the metal surface with a metal contact structure, wherein the metal contact structure may include copper.

LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE

A light emitting device includes a package having a recess which includes a bottom surface and an inner peripheral surface around a periphery of the bottom surface. The package includes a first lead to define a first part of the bottom surface, a second lead to define a second part of the bottom surface, and a resin body to provide the inner peripheral surface and a remaining part of the bottom surface. The bottom surface includes a light emitting element mounting region in the first part and a groove surrounding the light emitting element mounting region. A light emitting element is mounted on the light emitting element mounting region. A light-transmissive resin is provided in the recess to be in at least a part of a groove surface. A light reflecting resin is provided between the inner peripheral surface of the recess and the light-transmissive resin. 1. A light emitting device comprising: a first lead to define a first part of the bottom surface;', 'a second lead to define a second part of the bottom surface; and', 'a resin body molded with the first lead and the second lead to provide the inner peripheral surface and a remaining part of the bottom surface, the bottom surface including a light emitting element mounting region in the first part and a groove surrounding the light emitting element mounting region, the groove having an inner peripheral edge and an outer peripheral edge on the bottom surface and having a groove surface connecting the inner peripheral edge and the outer peripheral edge to define the groove surrounded by the groove surface;, 'a package having a recess which includes a bottom surface and an inner peripheral surface around a periphery of the bottom surface, the package comprisinga light emitting element mounted on the light emitting element mounting region;a light-transmissive resin provided in the recess to cover the light emitting element and to be in at least a part of the groove surface; anda light reflecting resin provided between ...

PHOSPHOR AND LIGHT EMITTING DEVICE

The present invention provides a phosphor, including a constituent having the formula CaSrM-A-B—O—N:Z, in which M selected from the group consisting of magnesium, barium, beryllium and zinc; A selected from the group consisting of aluminum, gallium, indium, scandium, yttrium, lanthanum, gadolinium and lutetium; B selected from the group consisting of silicon, germanium, tin, titanium, zirconium and hafnium; Z selected from the group consisting of europium and cerium; 0 Подробнее

Power module

A power module includes: a base plate having a first surface; electrode plate provided at the first surface; a wire connected to a semiconductor chip and the electrode plate; a metal member connected to the electrode plate; a terminal plate; a first resin layer, a connection portion of the wire and the semiconductor chip being disposed inside the first resin layer; and a second resin layer provided on the first resin layer and having a lower elastic modulus than the first resin layer. The terminal plate includes a bonding portion contacting an upper surface of the metal member, a curved portion curved upward from the bonding portion. The curved portion is disposed inside the second resin layer, and a length from the first surface of a lower surface of the bonding portion is greater than a length from the first surface of the connection portion.

FLOATING DIE PACKAGE

A floating die package including a cavity formed through sublimation of a sacrificial die encapsulant and sublimation or separation of die attach materials after molding assembly. A pinhole vent in the molding structure is provided as a sublimation path to allow gases to escape, whereby the die or die stack is released from the substrate and suspended in the cavity by the bond wires only. 1. A semiconductor package comprising:a lead frame including a die paddle and a first plurality of conductors and a second plurality of conductors;a first semiconductor die electrically connected to the first plurality of conductors through a first set of bond wires;a second semiconductor die electrically connected to the second plurality of conductors through a second set of bond wires, the second semiconductor die attached to the first semiconductor die;a molding structure covering portions of the lead frame, the first semiconductor die, the second semiconductor die, the first set of bond wires, and the second set of bond wires; anda cavity within the molding structure and covering portions of top surfaces of the first semiconductor die and attached to the second semiconductor die, wherein a portion of the cavity is in between the first semiconductor die and the die paddle, wherein one surface of each of the first plurality of conductors and two surfaces of each of the second plurality of conductors are exposed from the semiconductor package, and wherein the first semiconductor die is suspended by the first set of bond wires to float inside the cavity.2. The semiconductor package of claim 1 , wherein the second set of bond wires is below the first set of bond wires in a cross-sectional view of the semiconductor package.3. The semiconductor package of further comprising a film layer in contact with portions of the molding structure and covering a portion of the cavity.4. The semiconductor package of claim 3 , wherein the film layer includes a screen-printed film.5. The ...

IMAGE SENSOR PACKAGE AND METHOD OF PACKAGING THE SAME

An image sensor package and a method of packaging an image sensor are provided. The package includes: an image sensor chip including a first surface and a second surface opposite to each other, where the first surface is provided with a photosensitive region; a transparent substrate including a first surface and a second surface opposite to each other, where the first surface of the transparent substrate covers the first surface of the image sensor chip; and a light absorption layer, where the light absorption layer covers sidewalls of the transparent substrate. By forming the light absorption layer on at least the sidewalls of the transparent substrate of the image sensor package, defects of the image sensor chip such as bad imaging and ghosting are eliminated, thereby improving an imaging quality of the image sensor chip. 1. An image sensor package , comprising:an image sensor chip comprising a first surface and a second surface opposite to each other, wherein the first surface is provided with a photosensitive region;a transparent substrate comprising a first surface and a second surface opposite to each other, wherein the first surface of the transparent substrate covers the first surface of the image sensor chip; anda light absorption layer, wherein the light absorption layer covers sidewalls of the transparent substrate.2. The image sensor package according to claim 1 , wherein a supporting structure is arranged between the transparent substrate and the image sensor chip to form a gap between the transparent substrate and the image sensor chip; an accommodating cavity is formed by surrounding by the supporting structure claim 1 , the transparent substrate and the image sensor chip; the photosensitive region is located in the accommodating cavity; and the light absorption layer covers outer sidewalls of the supporting structure.3. The image sensor package according to claim 2 , whereinthe first surface of the image sensor chip is provided with contact pads, and ...

Image Sensor Structure and Packaging Method Thereof

The present invention discloses a CMOS image sensor structure and packaging method thereof. The method includes the following steps: providing an image sensor chip and a transparent package substrate that is ground and cut, the front side of the image sensor chip being provided with an image sensing region and a pad region surrounding the image sensing region; bonding a first end of a metal wire onto the pad, the other end being suspended outside the image sensor chip; bonding the transparent package substrate and the image sensor chip having the metal wire to form an image sensor package, which can be assembled by surface mount technology (SMT) or pressure welding via the exposed and suspended metal wire. In the present invention, an auxiliary substrate is optionally used and an optical glass is directly fixed to the image sensor chip, and the image sensor chip is directly connected to a circuit board. The image sensor products using this packaging method have better performance, reliability, and ultra-low packaging costs.

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device includes a substrate including wiring at a surface thereof, a semiconductor element on a surface of the substrate, a first solder resist on the wiring, a bonding wire connecting the wiring and the semiconductor element, and a second solder resist. The first solder resist has an opening region at which a part of the wiring is non-covered by the first solder resist, and the bonding wire connects the wiring and the semiconductor element in the opening region. The second solder resist at least partially covers the non-covered part of the wiring in the opening region.

Semiconductor packages and methods for forming semiconductor package

Semiconductor packages and methods for forming a semiconductor package are presented. The semiconductor package includes a package substrate having a die region on a first surface thereof. The package includes a die having a sensing element. The die is disposed in the die region and is electrically coupled to contact pads disposed on the first surface of the package substrate by insulated wire bonds. A cap is disposed over the first surface of the package substrate. The cap and the first surface of the package substrate define an inner cavity which accommodates the die and the insulated wire bonds. The insulated wire bonds are directly exposed to an environment through at least one access port of the package.

Semiconductor device and method for manufacturing semiconductor device

According to an aspect of the present disclosure, a semiconductor device includes a base plate, a first semiconductor chip provided above the base plate, a bonding wire joined with the first semiconductor chip at a first joint part and having a curved part above the first joint part, a first sealing member provided from an upper surface of the base plate up to a height higher than the first joint part and lower than the curved part, the first sealing member covering the first joint part and a second sealing member provided on the first sealing member, covering the curved part, and having an elastic modulus lower than an elastic modulus of the first sealing member.

Electronic component-incorporating substrate

An electronic component-incorporating substrate includes a lower substrate, an upper substrate, an electronic component located between the upper and lower substrates, a metal post connecting a first connection pad of the electronic component to a mounting pad of the lower substrate, a bonding wire connecting a second connection pad of the electronic component to a connection pad of the upper substrate, and an underfill resin filling the space between the electronic component and the lower substrate. The underfill resin covers the metal post and a first end of the bonding wire connected to the second connection pad of the electronic component. The bonding wire further includes a loop located at a lower position than a lower end of the metal post. The lower substrate further includes an accommodation portion that accommodates the loop.

LIGHT EMITTING DEVICES HAVING CLOSELY-SPACED BROAD-SPECTRUM AND NARROW-SPECTRUM LUMINESCENT MATERIALS AND RELATED METHODS

A semiconductor light emitting device includes an LED and an associated recipient luminophoric medium that includes respective first through fourth luminescent materials that down-convert respective first through fourth portions of the radiation emitted by the LED to radiation having respective first through fourth peak wavelengths. The first peak wavelength is in the green color range and the second through fourth peak wavelengths are in the red color range. The second and third luminescent materials each emit light having a full-width half maximum bandwidth of at least 70 nanometers, while the fourth luminescent material emits light having a full-width half maximum bandwidth of less than 60 nanometers. Embodiments that only include three luminescent materials are also disclosed. 1. A method of manufacturing a semiconductor light emitting device , comprising: [{'sub': 2', '2, 'dissolving MOpowder in a first hydrofluoric acid (HF) solution to provide an MO+HF solution, where M is one or more of Si, Ge, Sn, Ti, Zr or Hf;'}, {'sub': 2', '6', '2', '2', '6', '2, 'adding dissolved AMnFto the MO+HF solution to provide a AMnF+MO+HF solution, where A is an Alkali metal;'}, {'sub': 2', '2, 'dissolving AHFin a second hydrofluoric acid solution to provide an AHF+HF solution;'}, {'sub': 2', '2', '6', '2, 'adding the AHF+HF solution to the AMnF+MO+HF solution;'}, {'sub': 2', '6', '2', '2', '6', '2, 'sup': '4+', 'extracting solid precipitates of AMF:Mn from the combination of the AHF+HF and the AMnF+MO+HF solutions;'}], 'synthesizing a narrow-spectrum phosphor byproviding a light emitting diode (“LED”); and a first luminescent material that down-converts a first portion of the radiation emitted by the LED to radiation having a first peak wavelength in the green color range;', 'a second luminescent material that down-converts a second portion of the radiation emitted by the LED to radiation having a second peak wavelength in the red color range, the second luminescent material ...

PILLAR STRUCTURE AND MANUFACTURING METHOD THEREOF

A pillar structure is disposed on a substrate. The pillar structure includes a pad, a metal wire bump, a metal wire, and a metal plating layer. The pad is disposed on the substrate. The metal wire bump is disposed on the pad. The metal wire is connected to the metal wire bump. The metal wire extends in a first extension direction, the substrate extends in a second extension direction, and the first extension direction is perpendicular to the second extension direction. The metal plating layer covers the pad and completely encapsulates the metal wire bump and the metal wire. 1. A pillar structure disposed on a substrate and comprising:a pad disposed on the substrate;a metal wire bump disposed on the pad;a metal wire connected to the metal wire bump, the metal wire and the metal wire bump being integrally formed, wherein the metal wire extends in a first extension direction with the same diameter, the substrate extends in a second extension direction, and the first extension direction is perpendicular to the second extension direction, wherein a diameter of the metal wire is less than a width of the metal wire bump; anda metal plating layer covering the pad and completely encapsulating the metal wire bump and the metal wire.2. The pillar structure as recited in claim 1 , wherein an orthogonal projection of the metal wire bump on the substrate and an orthogonal projection of the pad on the substrate are completely overlapped claim 1 , and an area of the orthogonal projection of the metal wire bump on the substrate is smaller than an area of the orthogonal projection of the pad on the substrate.3. The pillar structure as recited in claim 1 , wherein a length of the metal wire is ⅘ a length of the metal plating layer.4. The pillar structure as recited in claim 1 , wherein a diameter of the metal wire is within a range from 15 micrometers to 200 micrometers.5. The pillar structure as recited in claim 1 , wherein he metal plating layer covers an upper surface of the pad ...

Sensor and manufacturing method thereof

In a module in which a circuit board is integrally insert molded with a housing while semiconductor parts mounted on the circuit board are exposed, deformation of the circuit board caused by pressure on the circuit board by a mold for blocking the molding resin is reduced. In the module in which the circuit board is integrally insert molded with the housing while the semiconductor parts mounted on the circuit board are exposed, the deformation of the circuit board is reduced by placing a material, which has an elastic modulus smaller than the elastic modulus of the printed circuit board, in the projection area of the mold holding portion on the circuit board.

Molded semiconductor package with high voltage isolation

A molded semiconductor package includes: a semiconductor die attached to a substrate, the semiconductor die having a bond pad at a first side of the semiconductor die which faces away from the substrate and an insulating layer covering the first side; an electrical conductor attached to a part of the bond pad exposed by an opening in the insulating layer; a mold compound encasing the semiconductor die; and an electrically insulative material filling the opening in the insulating layer and sealing the part of the bond pad exposed by the opening in the insulating layer. The electrically insulative material separates the mold compound from the part of the bond pad exposed by the opening in the insulating layer. A breakdown voltage of the electrically insulative material is greater than a breakdown voltage of the mold compound.

LED LIGHTING APPARATUS

An LED lighting apparatus is disclosed. The LED lighting apparatus includes a board having a principal surface, a plurality of LED chips mounted on the principal surface of the board, and a wiring pattern which is formed on the principal surface of the board and makes electrical conduction with the plurality of LED chips. Further, the LED lighting apparatus includes a frame-like bank which is provided on the principal surface of the board and surrounds the plurality of LED chips. In this case, the wiring pattern has one or more pads having a first portion interposed between the bank and the plurality of LED chips. The LED lighting apparatus further includes a protective layer covering at least a portion of the pads. 127-. (canceled)28. An LED package comprising:a substrate of a rectangular shape;a first LED chip row including a plurality of LED chips connected in series, and arranged over a surface of the substrate;a second LED chip row including a plurality of LED chips connected in series, and arranged over the surface of the substrate and spaced apart from the first LED chip row;a circular protruding portion formed over the surface of the substrate to surround the first LED chip row and the second LED chip row when viewed from a first direction perpendicular to the surface of the substrate;a first electrode electrically connected to a first end of the first LED chip row and a first end of the second LED chip row, and formed to extend from a first region surrounded by the circular protruding portion to a second region outside the first region when viewed from the first direction; anda second electrode electrically connected to a second end of the first LED chip row and a second end of the second LED chip row, and formed to extend from the first region surrounded by the circular protruding portion to the second region outside the first region when viewed from the first direction, at least a portion of the plurality of LED chips being interposed between the first ...

METHOD FOR FORMING AN ELECTRICAL CONNECTION BETWEEN AN ELECTRONIC CHIP AND A CARRIER SUBSTRATE AND ELECTRONIC DEVICE

An electrical connection wire connects an electrical connection pad of an electrical chip and an electrical connection pad of a carrier substrate to which the electronic chip is mounted. A dielectric layer surrounds at least the bonding wire. The dielectric layer may be a dielectric sheath or a hardened liquid dielectric material. A dielectric material may also cover at least a portion of the electrical chip and carrier substrate. A liquid electrically conductive material is deposited and hardened to form a local conductive shield surrounding the dielectric layer at the bonding wire. 19-. (canceled)10. An electronic device , comprising:a carrier substrate;an electronic chip mounted on the carrier substrate;at least one electrical connection wire connecting an electrical connection pad of the carrier substrate and an electrical connection pad of the electronic chip;a dielectric layer made of a dielectric material on top of a zone of the electronic chip and of the carrier substrate, including the electrical connection wire and the electrical connection pads, such that the dielectric layer forms a local dielectric coating which at least partially surrounds the electrical connection wire and at least partially covers the electrical connection pads; anda local conductive shield made of an electrically conductive material at least partially covering the local dielectric coating.11. The electronic device according to claim 10 , wherein the local dielectric coating completely surrounds the electrical connection wire and completely covers the electrical connection pads and wherein the local conductive shield completely covers the local dielectric coating.12. The device according to claim 10 , further comprising at least one additional electrical connection wire connecting an additional electrical connection pad of the carrier substrate and an additional electrical connection pad of the electronic chip claim 10 , the local conductive shield making contact with at least one of ...

LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE

A light emitting device () includes a base member (), electrically conductive members () disposed on the base member (), a light emitting element () mounted on the electrically conductive members (), an insulating filler () covering at least a portion of surfaces of the electrically conductive members () where the light emitting element () is not mounted, and a light transmissive member () covering the light emitting element (). 1. A light emitting device comprising:a light emitting element having a semiconductor layer and a transparent substrate;a reflective member exposing at least apart of side surfaces and a top surface of the transparent substrate and covering side surfaces of the semiconductor layer; anda light transmissive member covering a portion of the transparent substrate exposed from the reflective member.2. The light emitting device according to further comprising a base member and electrically conductive members disposed on the base member claim 1 , wherein the light emitting element is mounted on the electrically conductive members claim 1 , at a surface of the electrically conductive members claim 1 , at least a portion of which does not have the light emitting element mounted thereon is covered with an insulating filler which is the reflective member claim 1 , and the light transmissive member covers the light emitting element.3. The light emitting device according to claim 2 , wherein the base member has a recess and the electrically conductive members are disposed on a bottom surface and side surfaces of the recess claim 2 , and the light emitting element is mounted on the bottom surface of the recess.4. The light emitting device according to claim 3 , wherein the side surfaces of the recess has claim 3 , at a portion abutting on a top edge surface of the recess have a region where an electrically conductive member is not formed.5. The light emitting device according to claim 3 , wherein the side surfaces of the recess at a portion abutting on ...

COATED BOND WIRES FOR DIE PACKAGES AND METHODS OF MANUFACTURING SAID COATED BOND WIRES

A bond wire having a metal core, a dielectric layer, and a ground connectable metallization, wherein the bond wire has one or more vapor barrier coatings. Further, the present invention relates to a die package with at least one bond wire according to the invention. 1. A lead having a metal core , a dielectric layer at least partially surrounding the metal core , the dielectric in turn being at least partially surrounded by a ground connectable metal coating , wherein that the lead further has at least one vapor barrier coating for protecting areas that are not covered by metal.2. (canceled)3. The lead of claim 1 , wherein the metal coating surrounds the dielectric layer only partially.4. The lead of claim 1 , wherein the lead includes additional metal layers and/or additional dielectric layers.5. The lead of claim 1 , wherein the lead has multiple layers of dielectric of varying thickness claim 1 , which are separated by thin metal layers claim 1 , with the outermost layer being connected to ground.6. The lead of claim 1 , wherein a high performance dielectric providing a superior vapor barrier and/or oxygen degradation resistance is thinly deposited over a thick layer of another dielectric material.7. A die package comprisinga die having a plurality of connection pads;a die substrate supporting a plurality of connection elements; andone or more leads according to any of the preceding claims connected between the die and the die substrate.8. The die package of claim 7 , wherein the lead includes a first metal core with a defined core diameter claim 7 , a dielectric layer surrounding the first metal core having a first dielectric thickness claim 7 , an outer metal layer at least partially surrounding the dielectric layer claim 7 , and a vapor barrier overcoat.9. The die package of any of claim 7 , wherein the die is overmolded claim 7 , cured claim 7 , and/or singulated for use.10. A method of manufacturing the die package including a die having a plurality of ...

Light emitting diode (led) components and methods

Light emitting diode (LED) components and related methods are disclosed. LED components include a submount, at least one LED chip on a first surface of the submount, and a non-reflective, light permeable structure or dam. The light permeable dam can provide a component having a viewing angle that is greater than 115°. A method of providing an LED component includes providing a non-metallic submount, attaching at least one LED chip to a first surface of the submount, and dispensing a non-reflective, light permeable dam over the first surface of the submount about the at least one LED chip thereby providing a component having a viewing angle that is greater than 115°.

LIGHT EMITTING DEVICE INCLUDING RGB LIGHT EMITTING DIODES AND PHOSPHOR

A light emitting device including a plurality light emitting diodes configured to produce a primary light; a wavelength conversion means configured to at least partially convert the primary light into secondary light having peak emission wavelength ranges between 450 nm and 520 nm, between 500 nm and 570 nm, and between 570 nm and 680 nm; and a molded part to enclose the light emitting diodes and the wavelength conversion means. 1. A light emitting device , comprising:a substrate;a plurality of light emitting diodes disposed on the substrate; anda plurality of wavelength-conversion means comprising a first phosphor, a second phosphor, and a third phosphor,wherein:the plurality of wavelength-conversion means are spaced apart from each other;a peak emission wavelength of the first phosphor is in a first color range between 450 nm and 520 nm;a peak emission wavelength of the second phosphor is in a second color range between 500 nm and 570 nm;a peak emission wavelength of the third phosphor is in a third color range between 570 nm and 680 nm;one of the first phosphor, the second phosphor, and the third phosphor comprises a plurality of phosphor components, each phosphor component comprising a different peak emission wavelength in the first color range, the second color range, or the third color range.2. The light emitting device of claim 1 , wherein the light emitting device has a color temperature of 2 claim 1 ,000 K to 10 claim 1 ,000 K.3. The light emitting device of claim 1 , wherein the substrate comprises electrode patterns electrically connected to the plurality of the light emitting diodes.4. The light emitting device of claim 1 , wherein the plurality of the plurality of light emitting diodes comprise a purple blue emitting diode.5. The light emitting device of claim 4 , wherein the plurality of wavelength-conversion means are disposed on upper surfaces and side surfaces of the each of the light emitting diodes.6. The light emitting device of claim 5 , wherein ...

LIGHT SOURCE WITH TUNABLE CRI

A light-emitting device with at least two light-emitting dies encapsulated with two different types of the wavelength-converting materials is disclosed. Each of the wavelength-converting materials is configured to produce a visible light from a narrow band light near UV region produced by the light-emitting dies, but with different correlated color temperatures (CCT) and different spectral contents. The combination of the two visible light forms the desired visible white light. The Color rendering index of the light-emitting device is tunable by adjusting the supply current to the light-emitting dies. In another embodiment, a light module with tunable CRI for an illumination system is disclosed. 1. A light-emitting device , comprising:a plurality of conductors;first and second light-emitting dies attached respectively to one the plurality of conductors, the first and second light-emitting dies configured to emit a radiation having a peak wavelength near UV light;a first wavelength-converting material encapsulating the first light-emitting die, the first wavelength-converting material configured to convert at least a portion of the radiation emitted by the first light-emitting die into a first visible light; anda second wavelength-converting material encapsulating the second light-emitting die and the first wavelength-converting material, wherein the second wavelength-converting material is configured to convert at least a portion of the radiation emitted by the second light-emitting die into a second visible light having a different color correlation temperature and spectral content compared to the first visible light, and wherein at least a portion of the radiation emitted by the first light-emitting die is configured to be converted into the first visible light prior to entering the second wavelength-converting material.2. The light-emitting device of claim 1 , wherein the first and second light-emitting dies are InGaN dies.3. The light-emitting device of claim 1 ...

Power module and inverter equipment

The power module includes: a first metallic pattern; a plurality of power devices bonded on the first metallic pattern, each of the plurality of the power devices has a thickness thinner than a thickness of the metallic pattern; a frame member disposed so as to collectively enclose a predetermined number of the power devices on the first metallic pattern; a second metallic pattern disposed outside the frame member; and a resin layer configured to seal the plurality of the power devices and the first and second metallic patterns so as to include the frame member, wherein the frame member suppresses a stress according to a difference between a coefficient of thermal expansion of the metallic pattern and a coefficient of thermal expansion of the power devices. There is provided the power module easy to be fabricated, capable of suppressing the degradation of the bonded portion and improving reliability.

LIGHT EMITTING DIODE

A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode. 120.-. (canceled)21. A light emitting diode , comprising:a substrate;a first compound semiconductor layer disposed on the substrate;an active layer disposed on the first compound semiconductor layer;a second compound semiconductor layer disposed on the active layer;a first wavelength converting layer disposed on the substrate; anda second wavelength converting layer disposed on a portion of a top surface of the first wavelength converting layer,wherein a width of the second wavelength converting layer is less than a width of the first wavelength converting layer.22. The light emitting diode of claim 21 , wherein the width of the second wavelength converting layer is less than a width of the active layer.23. The light emitting diode of claim 21 , wherein the first wavelength converting layer covers the first compound semiconductor layer claim 21 , the active layer and the second compound semiconductor layer.24. The light emitting diode of claim 21 , wherein the top surface of the first wavelength converting layer is flat.25. The light emitting diode of claim 21 , wherein a top surface of the second wavelength converting layer is flat.26. The light emitting diode of claim 21 , wherein the second wavelength converting layer covers at least a central region of the first compound semiconductor layer.27. The light emitting diode of claim 21 , ...

Phosphor and method of manufacturing same, and led lamp

A phosphor has a composition represented by Chemical formula 1: 1.5Y 2 O 3 .2.5aAl 2 O 3 :Ce where a is a number satisfying 1.02<a<1.1.

Lightweight solid state light source with common light emitting and heat dissipating surface

Lightweight solid state light sources with common light emitting and heat dissipating surfaces consisting of light emitting diodes (LED) in thermal contact to light transmitting thermally conductive elements and combined with a reflector element to form a light recycling cavity, provide both convective and radiative cooling from their light emitting surfaces, eliminating the need for appended heatsinks. The lightweight self-cooling solid state light sources integrate the electrical interconnect of the LEDs and other semiconductor devices to a single substrate that is both the heatsink and the light emitting element. The elimination of heavy appended heatsinks enables these sources to be easily moved, attached and mounted on suspended ceilings without requiring separate supporting means. The low profile and nonflammable properties of the light sources allow their use on fire barrier surfaces or partitions. The light sources can easily be integrated into ceilings, ceiling grids or ceiling tiles.

Light emitting device and lighting fixture

A light emitting device has a plurality of light emitting elements, a heat spreading member on which the plurality of light emitting elements are mounted, and having a bottom face, an insulating member having a recess that includes side walls and a bottom wall, a top face of the bottom wall being in contact with the bottom face of the heat spreading member, and a circuit board having a circuit that is provided on the heat spreading member and supplies power to the plurality of light emitting elements.

Semiconductor package structures and methods of manufacturing the same

A semiconductor package structure includes a carrier, an electronic device, a spacer, a transparent panel, and a conductive wire. The electronic device has a first surface and an optical structure on the first surface. The spacer is disposed on the first surface to enclose the optical structure of the electronic device. The transparent panel is disposed on the spacer. The conductive wire electrically connects the electronic device to the carrier and is exposed to air.

Semiconductor Die being Connected with a Clip and a Wire which is Partially Disposed Under the Clip

A semiconductor device includes a first carrier, a first external contact, a second external contact, and a first semiconductor die. The first semiconductor die has a first main face, a second main face opposite to the first main face, a first contact pad disposed on the first main face, a second contact pad disposed on the second main face, a third contact pad disposed on the second main face, and a vertical transistor. The first semiconductor die is disposed with the first main face on the first carrier. A clip connects the second contact pad and the second external contact. A first wire is connected with the first external contact. The first wire is disposed at least partially under the clip.

Method for producing a solder joint

The invention relates to a method for producing a solder joint between at least one base part ( 2 ) and at least one first component ( 3 ), comprising the following steps: providing the base part ( 2 ); partially blasting a surface of the base part ( 2 ) using a SACO blasting agent, the blasting material ( 50 ) of which has a silicate coating ( 52 ), in such a way that a SACO-blasted region ( 20 ) and a non-blasted positioning region ( 40 ) are present; and soldering the at least first component ( 3 ) onto the non-blasted positioning region ( 40 ), wherein the SACO-blasted region ( 20 ) acts as a solder resist.

Encapsulating a Bonded Wire with Low Profile Encapsulation

Encapsulating a bonded wire with low profile encapsulation includes applying encapsulation over a bonded wire that is connected to a die on a first end and to a circuit component on a second end and truncating a shape of the encapsulation to form a truncated shape. 1. A method for encapsulating a bonded wire with low profile encapsulation , comprising:applying an encapsulation material over a bonded wire, the bonded wire being connected to a die on a first end, and the bonded wire being connected to a circuit component on a second end; andcompressing the encapsulation material, using a stamp, from a deposited shape to a truncated shape.2. The method of claim 1 , wherein compressing the encapsulation material using the stamp includes actively heating the stamp while compressing the encapsulation material.3. The method of claim 2 , wherein the truncated shape comprises a top-hat profile.4. The method of claim 2 , further comprising:subsequent to compressing the encapsulation material using the stamp, removing the stamp to allow the encapsulation material to solidify.5. The method of claim 1 , wherein the stamp includes a distance sensor to maintain a height of the truncated shape.6. The method of claim 5 , wherein maintaining the height of the truncated shape is based on a distance between the underside of the stamp and a top side of a compound disposed over the die.7. A method for encapsulating a bonded wire with low profile encapsulation claim 5 , comprising:applying an encapsulation material over a bonded wire, the bonded wire being connected to a die on a first end, and the bonded wire being connected to a circuit component on a second end;heating a stamp to compress the encapsulation material from a deposited shape to a truncated shape; andcompressing the encapsulation material, using the heated stamp, from the deposited shape to the truncated shape, wherein the truncated shape reflects a geometry of an underside of the stamp.8. The method of claim 7 , wherein ...

METHOD FOR FORMING AN ELECTRICAL CONNECTION BETWEEN AN ELECTRONIC CHIP AND A CARRIER SUBSTRATE AND ELECTRONIC DEVICE

An electrical connection wire connects an electrical connection pad of an electrical chip and an electrical connection pad of a carrier substrate to which the electronic chip is mounted. A dielectric layer surrounds at least the bonding wire. The dielectric layer may be a dielectric sheath or a hardened liquid dielectric material. A dielectric material may also cover at least a portion of the electrical chip and carrier substrate. A liquid electrically conductive material is deposited and hardened to form a local conductive shield surrounding the dielectric layer at the bonding wire. 1. A method , comprising the following steps:placing an electrical connection wire between an exposed electrical connection pad of an electronic chip and an exposed electrical connection pad of a carrier substrate to which the electronic chip is mounted and forming electrical junctions between the ends of the electrical connection wire and the pads, the electrical connection wire being equipped with an insulating sheath made of a dielectric material which surrounds the electrical connection wire except at exposed ends of the electrical connection wire;producing a local dielectric coating made of a dielectric material, which at least partially covers at least one of the electrical connection pads, the electrical junction and exposed end of the electrical connection wire adjacent thereto and at least partially surrounds an end portion of the insulating sheath adjacent to the electrical junction; andproducing a conductive shield made of an electrically conductive material which at least partially covers said dielectric coating and at least partially surrounds the insulating sheath.2. The method according to claim 1 , wherein producing the local dielectric coating comprises distributing a determined amount of the dielectric material in the liquid state and hardening said dielectric material.3. The method according to claim 2 , wherein distributing comprises using a controlled tool to ...

Method of manufacturing light-emitting device

A method of manufacturing a light-emitting device incudes providing a supporting member having a recess; disposing a light-emitting element at a bottom surface of the recess; disposing a first light-reflecting resin at the bottom surface of the recess; disposing a second light-reflecting resin in the recess, a viscosity of the second light-reflecting resin being higher than a viscosity of the first light-reflecting resin; and curing the first light-reflecting resin and the second light-reflecting resin to form a light-reflecting wall.

Light emitting device package

The present application relates to a light emitting device package. The light emitting device package includes a package substrate in which a via hole is formed. An electrode layer extends to both surfaces of the package substrate after passing through the via hole. A light emitting device is arranged on the package substrate and is connected to the electrode layer. A fluorescence film includes a first part that fills at least a part of an internal space of the via hole and a second part that covers at least a part of the light emitting device.

System and method for a mems transducer

An embodiment as described herein includes a microelectromechanical system (MEMS) with a first MEMS transducer element, a second MEMS transducer element, and a semiconductor substrate. The first and second MEMS transducer elements are disposed at a top surface of the semiconductor substrate and the semiconductor substrate includes a shared cavity acoustically coupled to the first and second MEMS transducer elements.

Resin Molding and Sensor Device

A resin molding includes a semiconductor element, a circuit board, and a resin. A conductor connected to the semiconductor element is formed on the circuit board. The resin is adhered and integrated with the circuit board. A resin leakage suppression layer including a material having a higher thermal conductivity than that of a material forming a surface layer of the circuit board is provided in an edge region extending along a portion adhered to the resin in the circuit board and extending along at least one-side side surface of the resin.

Pressure pulse wave sensor and biological information measurement device

A pressure pulse wave sensor includes: a sensor chip including: a pressure-sensitive element row configured by a plurality of pressure-sensitive elements arranged in one direction; and a chip-side terminal portion placed in an end portion in the one direction of a pressure-sensitive surface on which the pressure-sensitive element row is formed, and electrically connected to the pressure-sensitive element row; and a substrate including a concave portion, the sensor chip fixed to a bottom surface of the concave portion, a substrate-side terminal portion for being electrically connected to the chip-side terminal portion is disposed on a surface of the substrate in which the concave portion is formed, and the pressure pulse wave sensor further includes: an electroconductive member connecting the chip-side terminal portion and the substrate-side terminal portion to each other; and a protective member covering the electroconductive member.

Optical semiconductor device

An optical semiconductor device includes a substrate that has a silver plating layer formed on a surface, a light emitting diode that is bonded to the silver plating layer, a light reflecting portion that surrounds the light emitting diode, a transparent sealing portion that is filled into the light reflecting portion and seals the light emitting diode, and a clay film that covers the silver plating layer. The transparent sealing portion and the light reflecting portion are bonded to each other.