Verfahren zur Kapselung einer elektronischen Anordnung

Die vorliegende Erfindung betrifft ein Verfahren zur Kapselung einer elektronischen Anordnung gegen Permeanten, bei dem eine Haftklebemasse auf Basis von Butylenblockcopolymeren, insbesondere Isobutylenblockcopolymeren, bereitgestellt wird und bei dem die Haftklebemasse auf und/oder um die zu kapselnden Bereiche der elektronischen Anordnung appliziert wird.

OLED STABILITÄTSMATERIALIEN AND DEVICES WITH IMPROVED STABILITY

Optoelectronic device

Abstract The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity ...

Optoelectronic device

The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p- type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity ...

Organic luminescence compound as well as preparation method thereof and organic electroluminescence device

Nano porous structure for display package and method of manufacturing the structure

COMPOUND FOR ORGANIC ELECTROLUMINESCENT DEVICE, INCLUDING DOUBLE-CORE STRUCTURE, AND ORGANIC ELECTROLUMINESCENT DEVICE EMPLOYING COMPOUND

The present invention relates to a compound for an organic electroluminescent device, including a double-core structure in molecules thereof, and an organic electroluminescent device employing the compound. The present invention is to provide a compound for an organic electroluminescent device, including a double-core structure (A-B) in molecules represented by following chemical formula 1. The double core structure is configured in that luminescent materials with excellent luminescent efficiency are coupled to form a double core, and has structural characteristics in that two cores (A-B) of an aromatic ring having a planar structure are coupled at a twisted angle, and thus may exhibit high stability in a solution process and a long service life of the device due to high luminescent efficiency and enhanced solubility. Furthermore, by employing the compound for an organic electroluminescent device according to the present invention as a luminescent layer, high luminescent efficiency and ...

ADHESIVE FILM AND ENCAPSULATION METHOD OF ORGANIC ELECTRONIC DEVICE USING SAME

The present invention relates to an adhesive film, an encapsulating product of an organic electronic device using the same, and a method of encapsulating the organic electronic device, and more specifically, to an adhesive film for encapsulating an organic electronic device and a method of encapsulating the organic electronic device using the adhesive film. Here, the adhesive film includes a curable hot melt-type adhesive layer containing a curable resin and water absorbent. The curable hot melt-type adhesive layer has a first area contacting the organic electronic device when the organic electronic device is encapsulated and a second area which does not contact the organic electronic device. The curable hot melt-type adhesive layer contains the water absorbent ranging from 0% to 20% in the first area and ranging from 80% to 100% in the second area, based on the total mass of the water absorbent within the adhesive layer. COPYRIGHT KIPO 2017 ...

Transparent Display Device

Asymmetric phenanthrolines, their production methods and doped organic semiconductor material containing them

The present invention relates to asymmetrically substituted phenanthrolines, a method for producing them and to doped organic semiconductor materials that use such phenanthrolines.

Organic/inorganic hybrid perovskite compound, preparing method thereof, and solar cell comprising the same

The invention provides an organic/inorganic hybrid perovskite compound, a preparing method thereof, and a solar cell comprising the same. For the organic-inorganic hybrid perovskite compounds according to the present invention, since deuterium is substituted, a zero point energy becomes lower and the chemical stability of the perovskite compounds increases, thereby increasing the stability of the solar cells. Accordingly, the organic-inorganic hybrid perovskite compound according to the present invention can make the best use of a light-absorbing material of the solar cells.

SUBSTRATE FOR ORGANIC ELECTRONIC DEVICE

Provided are a substrate for an organic electronic device (OED), an OED, and lighting. The substrate capable of forming an OED may have excellent performances including light extraction efficiency and prevent penetration of moisture or a gas from an external environment, and thus an OED having excellent performance and durability may be provided.

Polymer compound and polymer light emitting device using the same

Provided is a polymer compound having a polystyrene reduced number average molecular weight of 10³-10⁸, and comprising a repeating unit represented by the below formula (1-1) or (1-2), wherein Ring A, Ring B, Ring C, or Ring D each independently represent an aromatic ring, and X represents S or O. The compound is usable as a light-emitting material, a charge transporting material, etc.

Organic light-emitting device

A heterocyclic compound represented by Formula 1 below and an organic light-emitting device including the heterocyclic compound: wherein R1 through R9 are defined as in the specification.

Stability OLED materials and devices

Organic light emitting materials and devices comprising phosphorescent metal complexes comprising ligands comprising aryl or heteroaryl groups substituted at both ortho positions are described. An organic light emitting device, comprising: an anode; a hole transport layer; an organic emissive layer comprising an emissive layer host and an emissive dopant; an electron impeding layer; an electron transport layer; and a cathode disposed, in that order, over a substrate.

ORGANIC SEMICONDUCTOR COMPOSITIONS

TANDEM OLED ARRANGEMENT WITH INTERMEDIATE LINK

Organic semiconductor composition

Organic Light Emitting Diode Display Device And Method Of Fabricating The Same

Organic molecules, especially for use in organic optoelectronic devices

The invention relates to an organic molecule, especially for use in optoelectronic components. According to the invention, the organic molecule contains - a first chemical unit having a structure of formula I and - two second chemical units each having, identically or differently at each instance, a structure of formula II where the first chemical unit is joined to each of the two second chemical units via a single bond; wherein T, V is independently an attachment point of the single bond between the chemical unit of formula I and a chemical unit or H; W, X, Y is independently an attachment point of the single bond between the chemical unit of formula I and a chemical unit or selected from the group consisting of H, CN and CF3; wherein exactly one radical selected from W, X and Y is CN or CF3 and exactly two radicals selected from the group consisting of T, V, W, X and Y are an attachment point of the single bond between the first chemical unit and a second chemical unit.

DISPLAY SUBSTRATE, METHOD OF MANUFACTURING DISPLAY SUBSTRATE, AND DISPLAY DEVICE INCLUDING DISPLAY SUBSTRATE

A method of manufacturing a display substrate may include the following steps: forming a drain electrode on a pixel area of a substrate; forming a pad electrode on a pad area of the substrate; forming an inorganic insulation layer that covers the drain electrode and the pad electrode; forming an organic insulation member that has a first thickness at the pixel area of the substrate, has a second thickness less than the first thickness at the pad area of the substrate, exposes a first portion of the inorganic insulation layer on the drain electrode, and exposes a second portion of the inorganic insulation layer on the pad electrode; removing the first portion of the inorganic insulation layer and the second portion of the inorganic insulation layer; and partially removing the organic insulation member.

ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF

An OLED display includes: a substrate; an organic light emitting element formed on the substrate and including a first electrode, an emission layer, and a second electrode; and an encapsulation layer formed on the substrate while covering the organic light emitting element. The encapsulation layer includes an organic layer and an inorganic layer, and a protrusion and depression structure is formed in an interface between the organic layer and the inorganic layer.

Organic light emitting diode display device including antireflection line

An organic light emitting diode display device includes: a substrate; a first antireflection line formed on the substrate and including a first metallic layer and a first inorganic layer stacked sequentially; a gate line formed on the first antireflection line; a gate insulation layer formed on the substrate and the gate line; a second antireflection line formed on the gate insulation layer and including a second metallic layer and a second inorganic layer stacked sequentially; a data line formed on the second antireflection line; and wherein the first inorganic layer connects the first metallic layer and the gate line electrically and the second inorganic layer connects the second metallic layer and the data line.

Compound for optoelectronic device, organic light-emitting diode including same, and display device including organic light-emitting diode

Disclosed are a compound for an organic optoelectronic device, an organic light emitting diode including the same, and a display device including the organic light emitting diode. The compound for an organic optoelectronic device represented by a combination of the following Chemical Formula 1 and Chemical Formula 2 provides an organic light emitting diode having life-span characteristics due to excellent electrochemical and thermal stability, and high luminous efficiency at a low driving voltage.

Compound comprising a five-membered hetero ring, an organic electrical element using the same and a terminal thereof

Disclosed are a compound comprising a five-membered hetero ring, an organic electrical element using the same and a terminal thereof.

Vapor jet printing

Embodiments of the disclosed subject matter provide systems and methods of depositing a film on a selective area of a substrate. A first jet of a first material may be ejected from a first nozzle assembly of a jet head having a plurality of nozzle assemblies to form a first portion of a film deposition on the substrate. A second jet of a second material may be ejected from a second nozzle assembly of the plurality of nozzle assemblies, the second nozzle assembly being aligned with the first nozzle assembly parallel to a direction of motion between the plurality of nozzle assemblies and the substrate, and the second material being different than the first material. The second material may react with the first portion of the film deposition to form a composite film deposition on the substrate when using reactive gas precursors.

Display Device and Method for Manufacturing the Same

Disclosed is a display device. In accordance with the display device, before an organic stack of a light-emitting diode is formed, a sticker is attached to a substrate, while a camera hole-forming portion and a margin area around the same are present, to form the organic stack, and the sticker and components on top of the sticker, such as the organic stack, are removed, so that the edge of the organic stack can be aligned without any additional process using separate masks and the reliability of the display device can be improved due to the provision of the organic stack at a location spaced apart from the camera hole by the margin area.

Пиксельный компонент дисплея, экранный компонент дисплея, экран дисплея и терминал

Изобретение относится к пиксельному компоненту дисплея и принадлежит к области технологий интеллектуального терминала. Пиксельный компонент дисплея используется в экране дисплея, и пиксельный компонент дисплея содержит светоизлучающий блок и анод. Анод включает в себя первую часть анода и вторую часть анода, расположенные рядом друг с другом в направлении, параллельном экрану дисплея. Материал первой части анода представляет собой светопропускающий материал, а материал второй части анода включает в себя не пропускающий свет материал. Светоизлучающий блок расположен между катодом и анодом экрана дисплея, а анод расположен между подложкой экрана дисплея и светоизлучающим блоком. В соответствии с настоящим изобретением, первая часть анода и вторая часть анода расположены в пиксельном компоненте дисплея, и вторая часть анода оказывает более слабое влияние на рассеяние света, излучаемого из светоизлучающего блока. Таким образом, качество отображения местоположения пиксельного компонента дисплея ...

ELEKTROLUMINESZENTE IRIDIUM CONNECTIONS WITH ROTOR MEADOW OR RED EMISSION AND DEVICES, MANUFACTURED USING SUCH CONNECTIONS

Method for inhibiting dark current of perovskite detector

Heterocyclic compound and organic light-emitting element comprising the same

Functional film and method of manufacturing the same, and of the functional membrane containing the electronic device

Organic semiconductor compositions

The present invention relates to organic copolymers and organic semiconductor compositions comprising these materials, including layers and devices comprising such organic semiconductor compositions. The invention relates to methods of preparing such organic semiconductor compositions and layers, and uses thereof. The organic copolymers and organic semiconductor compositions have applications in the field of printed electronics and are particularly useful as a semiconductor material for use in formulations for organic thin film transistor (OFET) backplanes for displays, integrated circuits, organic light emitting diodes (OLEDs), photodetectors, organic photovoltaic (OPV) cells, sensors, memory elements and logic circuits.

Display device

A display device includes: a display panel; a resin layer on the display panel and having a first protrusion having a first style on a surface thereof; a first window on the resin layer and having a second protrusion having a second style on a surface thereof; and a second window on the first window.

PANEL, ELECTRONIC DEVICE AND TRANSISTOR

A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.

DISPLAY DEVICE AND METHOD OF MANUFACTURING THE DISPLAY DEVICE

A display device includes a first signal line including a first layer disposed on a substrate and containing aluminum (Al), a second layer disposed on the first layer and containing titanium nitride (TiNx), and a third layer disposed on the second layer and containing titanium (Ti), a second signal line crossing the first signal line, a first transistor including a first gate electrode connected to the first signal line and a first source electrode connected to the second signal line, and an organic light emitting diode disposed in a display area of the substrate to generate light corresponding to a data signal applied to the second signal line.

AROMATIC AMINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME

Provided are: an aromatic amine derivative in which a terminal substituent such as a dibenzofuran ring or a dibenzothiophene ring is bonded to a nitrogen atom directly or through an arylene group or the like; an organic electroluminescence device including an organic thin film layer formed of one or more layers including a light emitting layer and interposed between a cathode and an anode in which a layer of the organic thin film layer contains the aromatic amine derivative by itself or as a component of a mixture, and the device has a long lifetime and high luminous efficiency; and an aromatic amine derivative for realizing the device.

DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

A display apparatus includes a substrate, a display layer disposed on the substrate, and a thin film encapsulation layer that covers the display layer. The display layer includes a plurality of emission portions and a non-emission portion around each of the plurality of emission portions. The thin film encapsulation layer includes a first organic film that covers the emission portions, a second organic film that covers the non-emission portion and is spaced apart from the first organic film, and a first inorganic film interposed between the first organic film and the second organic film.

OLED DEVICE AND MANUFACTURING METHOD THEREOF, AND FLEXIBLE DISPLAY UNIT

The invention discloses an OLED device including: a flexible substrate; a first anode and a second anode on the flexible substrate and being spaced from each other to form a channel therebetween; a flexible electrically-conductive assembly in the channel and connecting the first anode with the second anode; a first organic light emitting layer on the first anode and a second organic light emitting layer on the second anode; and a cathode on the first and the second organic light emitting layers. The invention can improve the flexibility of the anode of the OLED device, reduce an actual continuous length of the anode on a bending direction, reduce the probability of crack generation in the process of the OLED device being bent by external force, and therefore can increase bendable and wearable abilities of a flexible OLED display device formed by such OLED device.

Indolocarbazole derivative with fused heterocyclic aromatic group for organic electroluminescent device and organic electroluminescent device containing same

Disclosed is an organic electroluminescent device (organic EL device) that is improved in the luminous efficiency, fully secured of the driving stability, and of a simple structure and also disclosed is a compound for organic EL device useful for the said device. The compound for organic EL device is, for example, an indolocarbazole derivative represented by the following general formula (3). The organic EL device comprises a light-emitting layer disposed between an anode and a cathode piled one upon another on a substrate and the said light-emitting layer comprises a phosphorescent dopant and the aforementioned indolocarbazole derivative as a host material. In general formula (3), L is an aromatic heterocyclic group of a fused-ring structure with a valence of (n+1), Ar1 to Ar3 each is an alkyl group, an aralkyl group, or a substituted or unsubstituted aromatic hydrocarbon or aromatic heterocyclic group, and n is an integer of 0-5.

Methods for HMDSO thermal stability

Embodiments of the present disclosure generally relate to methods for forming an organic light emitting diode (OLED) device. Forming the OLED device comprises depositing a first barrier layer on a substrate having an OLED structure disposed thereon. A first sublayer of a buffer layer is then deposited on the first barrier layer. The first sublayer of the buffer layer is cured with a mixed gas plasma. Curing the first sublayer comprises generating water from the mixed gas plasma in a process chamber in which the curing occurs. The deposition of the first sublayer and the curing of the first sublayer is repeated one or more times to form a completed buffer layer. A second barrier layer is then deposited on the completed buffer layer.

Main group metal complexes as P-dopants for organic electronic matrix materials

A metal complex of a metal from groups 13 to 16 uses a ligand of the structure (I), where R1 and R2 can independently be oxygen, sulfur, selenium, NH or NR4, where R4 an alkyl or aryl and can be connected to R3. R3 is an alkyl, long-chain alkyl, alkoxy, long-chain alkoxy, cycloalkyl, halogenalkyl, aryl, arylene, halogenaryl, heteroaryl, heteroarylene, heterocycloalkylene, heterocycloalkyl, halogenheteroaryl, alkenyl, halogenalkenyl, alkynyl, halogenalkynyl, ketoaryl, halogenketoaryl, ketoheteroaryl, ketoalkyl, halogenketoalkyl, ketoalkenyl, halogenketoalkenyl, where in suitable radicals, one or more non-adjacent CH2— groups can be substituted independently of one another by —O—, —S—, —NH—, —NRo—, —SiRoRoo—, —CO—, —COO—, —OCO—, —OCO—O—, —SO2—, —S—CO—, —CO—S—, —CY1=CY2 or —C═C—, specifically in such a way that O and/or S atoms are not connected directly to one another, are likewise optionally substituted with aryl- or heteroaryl preferably containing 1 to 30 C atoms, as a dopant for matrix ...

ORGANIC SEMICONDUCTOR COMPOSITIONS

Organic light emitting element, display apparatus, image pickup apparatus, and illumination apparatus

Quantum dot composition, quantum dot light emitting material, preparation method thereof and light emitting device containing the same

Display panel

ORGANIC LIGHT-EMITTING DISPLAY DEVICE

The present invention relates to an organic light-emitting display device, wherein spark is prevented from occurring on a cathode electrode exposed by a mask in a CVD process to prevent a substrate from being damaged and reduce a bezel area. The organic light-emitting display device of the present invention comprises: a substrate including an active area and a bezel area on an outer area of the active area; an encapsulation substrate disposed to face the substrate in order to expose portion of the bezel area of the substrate; an organic light-emitting diode including a first electrode disposed on the active area of the substrate, an organic membrane layer exposing the first electrode in order to define a pixel area and disposed on a bank layer extended from the active area to the bezel area to come into contact with the exposed anode electrode, and a second electrode extended from the active area to the bezel area and disposed on the bank layer to cover the organic membrane layer; a capping ...

Display Device Including Protecting Layer for Hydrogen Adsorbing Layer

Polymer comprising phenyl pyridine units

The invention relates to a polymer comprising structural unit of formula II: wherein R1, R2, R3, R4, R5, R6 and R7 are independently at each occurrence a C1-C20 aliphatic radical, a C3-C20 aromatic radical, or a C3-C20 cycloaliphatic radical; a, b, d, e and f are independently at each occurrence 0, or an integer ranging from 1 to 4; c and g are independently at each occurrence 0, or an integer ranging from 1 to 3. In another aspect, the invention relates to monomers for preparing the polymers. In yet another aspect, the invention relates to an optical electronic device comprising a polymer comprising structural unit of formula II.

Shorts prevention in organic light-emitting diodes

An organic light emitting diode comprising a first electrode layer, a second electrode layer, a stack of functional layers, including an organic light-emitting layer, sandwiched between said first electrode layer and said second electrode layer, and an passivation layer arranged adjacent to said first electrode layer is disclosed. The passivation layer reacts with the first electrode layer to form an oxide at a reaction temperature that is induced by an evolving short circuit between the first electrode layer and the second electrode layer. The passivation layer is unreactive at temperatures lower than the reaction temperature.

The light emitting material for organic electroluminescence device

The invention discloses an organic electroluminescent material and an application thereof. The organic electroluminescent material is made of a compound having a structure represented by formula (1).The invention also discloses organic electrochemistry using the novel compound. An electroluminescent device, an organic electroluminescent device using the compound as a delayed fluorescent light emitting dopant or a fluorescent light emitting dopant has a good performance, such as a low driving voltage and low power consumption, especially in a body (H1 To H4) and the second main body (SH1 to SH4) can increase efficiency and increase half-life, wherein G is shown in the following formula (2) (shown in the description).

OPTOELECTRONIC DEVICE

The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity ( ...

Compound including indole derivative, organic electronic element using same, and terminal thereof

Disclosed are a compound including an indole derivative, an organic electronic element using the same, and a terminal thereof.

LUMINESCENCE DEVICE, AND DISPLAY DEVICE INCLUDING SAME

A luminescence device includes a first electrode, a first emission portion disposed on the first electrode, a second electrode disposed on the first emission portion, and a capping layer disposed on the second electrode and including a metal atom and a metal halide compound, wherein the metal atom is a lanthanide metal, a transition metal, or a post-transition metal and the metal halide compound is formed by combining an alkali metal atom and a halogen atom.

Optoelectronic device

The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p- type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity ...

Spiro-structured organic electroluminescent composition and preparation method thereof

Organic Semiconductor Compositions

Benzimidazole compound and derivatives, organic electronic transmission material as well as preparation of benzimidazole compound and derivatives and application of organic electronic transmission material

ORGANIC COMPOUND

COMPOUND FOR ORGANIC ELECTRONIC ELEMENT, ORGANIC ELECTRONIC ELEMENT USING THE SAME, AND AN ELECTRONIC DEVICE THEREOF

FLEXIBLE DISPLAY DEVICE

SCREENING METHOD OF ELECTRON TRANSPORT MATERIAL AND HOLE BLOCKING MATERIAL FOR USE IN ORGANIC LIGHT EMITTING DEVICE

Display apparatus and manufacturing the same

PIXEL DISPLAY COMPONENT, SCREEN DISPLAY COMPONENT, DISPLAY SCREEN, AND TERMINAL

ORGANIC LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING SAME

The present invention relates to an organic light emitting device and a method of manufacturing the same. The organic light emitting device includes a substrate; a light emitting part provided on the substrate; a sealing layer provided on the light emitting part to prevent the penetration of moisture; and a flexible layer provided on the sealing layer and absorbing an external impact. COPYRIGHT KIPO 2017 ...

Monobenzochrysene derivative, organic electroluminescent device material containing the same, and organic electroluminescent device using the organic electroluminescent device material

Disclosed is a monobenzochrysene derivative represented by the following general formula (1). (1) (In the formula, R1-R14 independently represent a hydrogen atom or a substituent, and at least one of R1-R14 is a substituted or unsubstituted aryl group not containing an anthracene skeleton or a benzo[g]chrysene skeleton and having 6-50 nuclear carbon atoms or a substituted or unsubstituted heteroaryl group not containing an anthracene skeleton or a benzo[g]chrysene skeleton and having 5-50 nuclear carbon atoms, excluding the case where R8 and R9 are unsubstituted phenyl groups and R1-R7 and R10-R14 are hydrogen atoms and the case where R9 is an unsubstituted phenyl group and R1-R8 and R10-R14 are hydrogen atoms.) ...

Encapsulation structure for organic light emitting display device, organic light emitting display device, and methods of manufacturing organic light emitting display device

An encapsulation structure for an organic light emitting display device, an organic light emitting display device, and a method of manufacturing an organic light emitting display device are provided. The encapsulation structure includes a first porous layer, a first planarization layer, and a first barrier layer. The first porous layer above a substrate may have a curved top surface. The first planarization layer on the first porous layer may have a flat top surface. The first barrier layer on the first planarization layer may include a low melting point glass.

QUANTUM DOT ORGANIC LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME

A quantum dot organic light emitting device and a method of manufacturing the same are disclosed. A first electrode layer is formed on a substrate. A block copolymer film which can cause phase separation on the first electrode layer is formed. The block copolymer film is phase-separated into a plurality of first domains, each having a nano size column shape, and a second domain which surrounds the first domains. A quantum dot template film of the second domain, which comprises a plurality of nano size through holes, is formed by selectively removing the first domains. Quantum dot structures, each of which comprises an organic light emitting layer in the through hole of the quantum dot template film, is formed.

ELECTROLUMINESCENT DEVICE

The invention relates to an electroluminescent device (10) comprising a substrate (40) and on top of the substrate (40) a substrate electrode (20), a counter electrode (30) and an electroluminescent layer stack with at least one organic electroluminescent layer (50) arranged between the substrate electrode (20) and the counter electrode (30), and at least one electrical shunt means (122) applied on top of the substrate electrode (20) to improve the current distribution over the substrate electrode (20), wherein the at least one electrical shunt means (122) is at least one element of the group of a wire, a metallic stripe or foil, said electrical shunt means (122) fixed to the substrate electrode (20) by a protective means (70) fully covering the electrical shunt means (122) with a shape suitable to prevent the emergence of a shadowing edge on the substrate electrode (20). The invention further relates to a method to manufacture such a device.

Light emitting material for organic electroluminescence device

L, m, n, p, R1 to R4, Ar and X are the same definition as described in the present invention.

Display device and method for manufacturing the same

Disclosed is a display device. In accordance with the display device, before an organic stack of a light-emitting diode is formed, a sticker is attached to a substrate, while a camera hole-forming portion and a margin area around the same are present, to form the organic stack, and the sticker and components on top of the sticker, such as the organic stack, are removed, so that the edge of the organic stack can be aligned without any additional process using separate masks and the reliability of the display device can be improved due to the provision of the organic stack at a location spaced apart from the camera hole by the margin area.

DISPLAY DEVICE

A display device includes a substrate including a display area, a non-display area, a first additional area connected to the non-display area at a first boundary, and a second additional area connected to the first additional area at a second boundary, pixels on the display area, an encapsulation film on the pixels, electrodes on the encapsulation film, pads on the second additional area, sensing wires connecting the electrodes and the pads, a first sensing insulating film on the encapsulation film, and a second sensing insulating film on the first sensing insulating film. The substrate includes a curved first side in the first additional area and the first additional area decreases in width from the first boundary to the second boundary, and a boundary of the first sensing insulating film is closer to the first side than a boundary of the second sensing insulating film is to the first side.

Polycyclic compound and organic light-emitting device including the same

A polycyclic compound and an organic light-emitting device including the same are provided. The polycyclic compound is represented by Formula 1: ...

ORGANIC LIGHT-EMITTING DEVICE

An organic light-emitting device is provided. The organic light-emitting device includes: an anode; a cathode; and an organic layer between the anode and the cathode and including an emission layer, wherein the emission layer includes a first emission layer including a first host, a second host, and a first dopant, and a second emission layer including a third host, a fourth host, and a second dopant, and the organic light-emitting device satisfies Equations 1 and 2.

Compound, application thereof and organic electroluminescence device

ORGANIC LIGHT EMITTING DISPLAY DEVICE

Flexible display panel and flexible display device

Display apparatus and the method for the manufacturing the same

Organic light emitting display device and manufacturing method thereof

LUMINESCENCE DEVICE, AND DISPLAY DEVICE INCLUDING THE SAME

Display device and method of manufacturing the display device

A display device includes a first signal line including a first layer disposed on a substrate and containing aluminum (Al), a second layer disposed on the first layer and containing titanium nitride (TiNx), and a third layer disposed on the second layer and containing titanium (Ti), a second signal line crossing the first signal line, a first transistor including a first gate electrode connected to the first signal line and a first source electrode connected to the second signal line, and an organic light emitting diode disposed in a display area of the substrate to generate light corresponding to a data signal applied to the second signal line.

ORGANIC SEMICONDUCTOR COMPOSITIONS

The present invention relates to organic copolymers and organic semiconducting compositions comprising these materials, including layers and devices comprising such organic semiconductor compositions. The invention is also concerned with methods of preparing such organic semiconductor compositions and layers and uses thereof. The invention has application in the field of printed electronics and is particularly useful as a semiconducting material for use in formulations for organic thin film transistor (OTFT) backplanes for displays, integrated circuits, organic light emitting diodes (OLEDs), photodetectors, organic photovoltaic (OPV) cells, sensors, memory elements and logic circuits.

Heterocyclic compound and organic light emitting element comprising same

The present specification provides a heterocyclic compound and an organic light emitting device including the same.

FUNCTIONAL FILM, METHOD FOR PRODUCING THE SAME, AND ELECTRONIC DEVICE INCLUDING FUNCTIONAL FILM

To provide a functional film having excellent bending resistance and stability under high temperature and high humidity conditions, a method for producing the same, and an electronic device including the functional film. A functional film including a resin base, a functional inorganic layer arranged on the resin base, and a hybrid layer arranged on at least one surface of the functional inorganic layer, in which the hybrid layer contains a polysiloxane and fine resin particles. 1. A functional film comprising:a resin base;a functional inorganic layer arranged on the resin base; anda hybrid layer arranged on at least one surface of the functional inorganic layer, wherein the hybrid layer comprises a polysiloxane and fine resin particles.2. The functional film according to claim 1 , wherein the hybrid layer is present between the resin base and the functional inorganic layer.3. The functional film according to claim 1 , wherein the hybrid layer is arranged on the surface of the functional inorganic layer opposite to the resin base.4. The functional film according to claim 1 , wherein the functional film has a functional inorganic layer produced by laminating two or more layers.5. The functional film according to claim 1 , wherein a ratio of a film thickness of the functional inorganic layer compared to a film thickness of the hybrid layer (film thickness of functional inorganic layer/film thickness of hybrid layer) is 0.001 to 10.6. The functional film according to claim 1 , wherein the functional film comprises claim 1 , on both surfaces of the resin base claim 1 , the functional inorganic layer and the hybrid layer arranged on at least one surface of the functional inorganic layer.7. The functional film according to claim 1 , wherein the functional inorganic layer is an inorganic layer with a gas barrier property.8. A method for producing a functional film comprising a resin base claim 1 , a functional inorganic layer arranged on the resin base claim 1 , and a ...

Arylsulfonic acid compound and use thereof as electron-acceptor material

Disclosed is an arylsulfonic acid compound characterized by being represented by formula (1). By using this compound as an electron-acceptor material, highly uniform film formability can be achieved. By using a thin film containing the arylsulfonic acid compound in an OLED device or a PLED device, there can be obtained excellent EL device characteristics such as low driving voltage, high luminous efficiency and long life. (In the formula, X represents O, S or NH; Ar represents an aryl group; and n represents the number of sulfonic groups, which is an integer of 1-4.) ...

Synthetic method of fused heteroaromatic compound and fused heteroaromatic compound and intermediate therefor and synthetic method of intermediate

A method of making a chemical product includes reacting a compound represented by Chemical Formula 1 with a metal alkyl chalcogenide using a palladium catalyst and a tertiary phosphine catalyst to obtain a first intermediate represented by Chemical Formula 2, obtaining a second intermediate represented by Chemical Formula 3 from the first intermediate, obtaining a third intermediate from the second intermediate and a compound represented by Chemical Formula 4, obtaining a fourth intermediate including a chalcogen-containing ring from the third intermediate, and performing a cyclization reaction of the fourth intermediate to obtain a fused heteroaromatic compound. A fused heteroaromatic compound obtained by the method, an intermediate thereof, and a synthetic method of the intermediate are disclosed.

HETEROCYCLIC COMPOUND, ORGANIC LIGHT-EMITTING DIODE INCLUDING THE HETEROCYCLIC COMPOUND, AND FLAT DISPLAY DEVICE INCLUDING THE ORGANIC LIGHT-EMITTING DIODE

Provided are a heterocyclic compound represented by Formula 1 below, and an organic light-emitting diode and a flat display device each including the heterocyclic compound. The organic light-emitting diode including an organic layer including the heterocyclic compound has a low driving voltage, high luminescence efficiency, and long lifetime.

Substrate bearing an electrode, organic light-emitting device incorporating it, and its manufacture

A substrate bearing, on one main face, a composite electrode, which includes an electroconductive network which is a layer formed from strands made of an electroconductive material based on a metal and/or a metal oxide, and having a light transmission of at least 60% at 550 nm, the space between the strands of the network being filled by an electroconductive fill material. The composite electrode also includes an electroconductive coating, which may or may not be different from the fill material, covering the electroconductive network, and in electrical connection with the strands, having a thickness greater than or equal to 40 nm, of resistivity 1 less than 105 ·cm and greater than the resistivity of the network, the coating forming a smoothed outer surface of the electrode. The composite electrode additionally has a sheet resistance less than or equal to 10/.

Organic light emitting element, display apparatus, image picking apparatus, and illumination apparatus

An organic light emitting element comprising a light emitting layer between two electrodes, the light emitting layer having a host material with a lower triplet excitation energy (T1(H1)) than a dopant material (T1(D1)), the dopant being 0.3 wt% of the light emitting layer. The dopant may be fluorescent. A second light emitting layer may be included, with second host and dopant materials, and may be in contact with the first light emitting layer. The second host may have a lowest triplet excitation energy that is higher than the first host, but lower than the second dopant. The difference between the lowest singlet and triplet excitation levels may be ≥0.2eV for materials in the light emitting layers. The light emitting element may be used in a display, a camera, a mobile terminal, a lamp, or a light source of a vehicle such as a car.

Polymer and organic light emitting device

DEVICE COMPRISING DIELECTRIC INTERLAYER

A process for preparing a device and a device including a substrate; an interlayer disposed on the substrate, wherein the interlayer comprises a cured film formed from an interlayer composition, wherein the interlayer composition comprises: an epoxy compound; a polyvinyl phenol; a melamine resin; a solvent; an optional surfactant; and an optional catalyst; a source electrode and a drain electrode disposed on a surface of the interlayer; a semiconductor layer disposed on the interlayer, wherein the semiconductor layer is disposed into a gap between the source and drain electrode; a back channel interface comprising an interface between the semiconductor layer and the interlayer, wherein the interlayer serves as a back channel dielectric layer for the device; a dielectric layer disposed on the semiconductor layer; a gate electrode disposed on the dielectric layer. Also an interlayer composition and an organic thin film transistor comprising the interlayer composition.

ELECTROLUMINESCENT DISPLAY DEVICE

유기 화합물

... 정공수송성을 갖고, 밴드갭이 넓은 물질을 제공한다. 일반식 (G2)으로 표시되는 화합물을 제공한다. 일반식 (G2) 중에서, α3 및 α4은, 각각 독립하여, 치환 또는 무치환의 탄소수 6∼13의 아릴렌기를 표시하고, Ar2은, 치환 혹은 무치환의 탄소수 14의 아릴기, 치환 혹은 무치환의 4-디벤조티오페닐기, 또는 치환 혹은 무치환의 4-디벤조푸라닐기를 표시하고, m은, 0 또는 1을 표시하고, X10은, 염소, 브롬, 또는 요오드를 표시한다.

Light- emitting component with wavelength converter and manufacturing method thereof

A conversion layer (5) is evaporated on the light-emitting surface. The conversion layer (5) can comprise an evaporated matrix material and an evaporated conversion material, especially both of them can include low-molecular organic compounds. A layer structure (3) containing a layer used for generating radiation can be formed of low-molecular organic compounds, so that all compounds can be generated in the same evaporation plant.

Organic electroluminescence device and material for organic electroluminescence device

An organic electroluminescent device which comprises a cathode, an anode, and an organic thin film layer disposed between the electrodes and composed of one or more layers, wherein the organic thin film layer includes at least one luminescent layer and at least one of the luminescent layer(s) comprises at least one phosphorescent material and a host material represented by the following formula (1). Ra-Ar1-Ar2-Rb (1) (In the formula, Ar1, Ar2, Ra, and Rb each represents an (un)substituted benzene ring or a fused aromatic hydrocarbon group selected among a naphthalene ring, chrysene ring, fluoranthene ring, triphenylene ring, phenanthrene ring, benzophenanthrene ring, dibenzophenanthrene ring, benzotriphenylene ring, benzochrysene ring, picene ring, and benzo[b]fluoranthene ring each optionally substituted.) ...

Compound, organic electronic element using the same, electronic device thereof, and heat resistance measuring method

Disclosed are a compound, an organic electronic element using the same, and a terminal thereof.

Compound and organic electronic device using the same

Provided are a novel compound and an organic electronic device using the same. The novel compound is represented by the following Formula (I): wherein X1 and X2 are each independently C(Ra), the two (Ra)s are the same or different, and the two (Ra)s are joined together to form an aryl ring; wherein X3 and X4 are each independently C(Rb), the two (Rb)s are the same or different, and the two (Rb)s are joined together to form a heteroaryl ring containing at least one furan group or at least one thiophene group.

ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

An organic light-emitting display apparatus including a substrate, a first first electrode on the substrate, a first organic functional layer on the first first electrode, the first organic functional layer including a first emission layer, a first second electrode on the first organic functional layer, a second first electrode on the substrate, the second first electrode being spaced apart from the first first electrode, a second organic functional layer on the second first electrode, the second organic functional layer including a second emission layer, a second second electrode on the second organic functional layer, and a self-assembled layer between the first organic functional layer and the second organic functional layer, the self-assembled layer containing fluorine. 1. An organic light-emitting display apparatus , comprising:a substrate;a first first electrode on the substrate;a first functional layer on the first first electrode, the first functional layer including a first emission layer;a first second electrode on the first functional layer;a second first electrode on the substrate, the second first electrode being spaced apart from the first first electrode;a second functional layer on the second first electrode, the second functional layer including a second emission layer;a second second electrode on the second functional layer;a pixel-defining layer including an insulating layer and covering an edge of the first first electrode and an edge of the second first electrode; anda layer under the pixel-defining layer, the layer containing fluorine and surrounds peripheries of the first first electrode and the second first electrode.2. The organic light-emitting display apparatus as claimed in claim 1 , wherein the layer overlaps end portions of the first first electrode and the second first electrode.3. The organic light-emitting display apparatus as claimed in claim 1 , wherein the layer includes a fluorocarbon group (—CF).4. The organic light-emitting ...

THIN FILM STRUCTURE INCLUDING DIELECTRIC MATERIAL LAYER AND ELECTRONIC DEVICE EMPLOYING THE SAME

Disclosed are a thin film structure and an electronic device including the same. The disclosed thin film structure includes a dielectric material layer between a first material layer and a second material layer. The dielectric material layer includes a dopant in a matrix material having a fluorite structure. The dielectric material layer is uniformly doped with a low concentration of the dopant, and has ferroelectricity. 1. A thin film structure comprising:a first material layer;a dielectric material layer having ferroelectricity on the first material layer, the dielectric material layer including a matrix material having a fluorite structure and a dopant, a ratio of a concentration mean to a concentration standard deviation of the dopant in a thickness direction of the dielectric material layer is 8 or greater, and a thickness uniformity of the dielectric material layer is 90% or greater; anda second material layer on the dielectric material layer.2. The thin film structure of claim 1 , wherein the matrix material of the dielectric material layer is formed by atomic layer deposition.3. The thin film structure of claim 2 , wherein the matrix material of the dielectric material layer is an oxide claim 2 , andwherein the atomic layer deposition includes sequential injection cycles of a precursor and an oxidant, and an injection of the dopant between a precursor injection cycle and an oxidant injection cycle of at least one of the sequential injection cycles.4. The thin film structure of claim 3 , wherein the oxide includes a metal oxide.5. The thin film structure of claim 4 , wherein the matrix material of the dielectric material layer includes at least one of HfO claim 4 , ZrO claim 4 , and CeO.6. The thin film structure of claim 5 , wherein the dopant includes at least one of Al claim 5 , Si claim 5 , Zr claim 5 , Y claim 5 , La claim 5 , Gd claim 5 , and Sr.7. The thin film structure of claim 4 , wherein the dopant includes at least one of Al claim 4 , Si claim 4 , ...

PEROVSKITE LIGHT EMITTING DEVICE

A perovskite light emitting diode having degradation of the characteristics of the light emitting device, caused by PEDOT:PSS can be improved by replacing PEDOT:PSS contained in a conventional hole transport layer with an anionic conjugated polymer having ammonium-based counter ions, and the light emission characteristics can be greatly improved by passivating defects of a perovskite light emitting layer with a hole transport layer containing a conjugated polymer and increasing crystal growth. 2. The device of claim 1 , wherein a HOMO level of the hole transport layer is in a range of 5.0 to 6.0 eV.3. The device of claim 1 , wherein a difference between a LUMO level of the hole transport layer and a LUMO level of the perovskite light-emitting layer is 0.3 eV or greater.4. The device of claim 1 , wherein a contact angle of water on a surface of the hole transport layer is 10° or greater.5. The device of claim 1 , wherein a thickness of the perovskite light-emitting layer is 500 nm or smaller.6. The device of claim 1 , wherein the hole transport layer is subjected to post-treatment using electrical stress applied in a driving direction of the perovskite light-emitting device.7. The device of claim 1 , wherein the perovskite light-emitting device is encapsulated and then aged for at least 12 hours in a nitrogen atmosphere at room temperature.8. The device of claim 2 , wherein a HOMO level of the hole transport layer is in a range of 5.60 to 6.0 eV.10. The device of claim 9 , wherein a HOMO level of the hole transport layer is in a range of 5.0 to 6.0 eV.11. The device of claim 9 , wherein a difference between a LUMO level of the hole transport layer and a LUMO level of the perovskite light-emitting layer is 0.3 eV or greater.12. The device of claim 9 , wherein a contact angle of water on a surface of the hole transport layer is 10° or greater.13. The device of claim 9 , wherein a thickness of the perovskite light-emitting layer is 500 nm or smaller.14. The device of ...

AN OLED DISPLAY PANLE AND A PACKAGE METHOD

The present invention is to provide an Organic Light-Emitting Diode (OLED) display panel and a package method thereof. The method includes forming simultaneously a supporter and a hydrophobic wall on an outer position of and enclosing the OLED device by screen printing, wherein the hydrophobic wall is on an outer position of the supporter; and bonding the cover plate and the OLED substrate. The present invention can effectively protect the OLED device from outer moisture and oxygen to improve package effect and increase life of the OLED device. The supporter and the hydrophobic wall are formed simultaneously by screen printing so the method is simple and the manufacturing efficiency is improved. 1. A method of packaging an organic light-emitting diode (OLED) display panel , comprising:providing a cover plate and an OLED substrate, wherein an OLED device is set on the OLED substrate;forming simultaneously a supporter and a hydrophobic wall on an outer position of and enclosing the OLED device by screen printing, wherein width of the hydrophobic wall is 100-2000 μm; andbonding the cover plate and the OLED substrate; providing a screen printing template having two pattern openings, wherein the shapes of the two openings are corresponding to that of the supporter and the hydrophobic wall;', 'setting the materials of the supporter and the hydrophobic wall on the screen printing template respectively; and', 'scraping the materials of the supporter and the hydrophobic wall on the screen printing template by scraper to coat the materials into the corresponding openings., 'wherein the method of forming simultaneously the supporter and the hydrophobic wall comprises2. The method of claim 1 , wherein a material of the hydrophobic wall is solution claim 1 , and after bonding the cover plate and the OLED substrate claim 1 , the method further comprises:curing a material of the supporter by UV ray; anddrying the cured supporter and a solution of the hydrophobic wall.3. The method ...

INORGANIC-ORGANIC HYBRID SOLAR CELL HAVING DURABILITY AND HIGH PERFORMANCE

Provided is a solar cell including: a first electrode; an electron transport layer positioned on the first electrode; a light absorber; a hole transport layer; and a second electrode, wherein the light absorber contains a solid-solution of at least two organic-metal halides with a perovskite structure, having different compositions from each other. 1. A solar cell comprising: a first electrode; an electron transport layer positioned on the first electrode; a light absorber; a hole transport layer; and a second electrode , wherein the light absorber contains a solid-solution of at least two organic-metal halides with a perovskite structure , having different compositions from each other.2. The solar cell of claim 1 , wherein among at least two organic-metal halides forming the solid-solution claim 1 , one organic-metal halide is iodide claim 1 , and another organic-metal halide is bromide claim 1 , orone organic-metal halide is bromide, and another organic-metal halide is chloride.3. The solar cell of claim 1 , wherein among at least two organic-metal halides forming the solid-solution claim 1 , one organic-metal halide satisfies the following Chemical Formula 1 claim 1 , and another organic-metal halide satisfies the following Chemical Formula 2:{'br': None, 'sub': '3', 'AMX\u2003\u2003(Chemical Formula 1)'}{'sup': +', '−, 'claim-text': {'br': None, 'sub': '3', 'A″M′X′\u2003\u2003(Chemical Formula 2)'}, '(in Chemical Formula 1, A is a monovalent organic ammonium ion, a monovalent ammonium ion, or Cs, M is a divalent metal ion, and X is Br), and'}{'sup': +', '−', '−, '(in Chemical Formula 2, A′ is a monovalent organic ammonium ion, a monovalent ammonium ion, or Cs, M′ is a divalent metal ion, and X′ is I or Cl).'}4. The solar cell of claim 1 , wherein the solid-solution satisfies the following Chemical Formula 3:{'br': None, 'sub': 1(1-m)', '2(m)', '3, 'A″M″(XX)\u2003\u2003(Chemical Formula 3)'}{'sup': −', '−', '−', '−, 'sub': 1', '2, '(in Chemical Formula 3, A″ is a ...

AMBIPOLAR SYNAPTIC DEVICES

Device architectures based on trapping and de-trapping holes or electrons and/or recombination of both types of carriers are obtained by carrier trapping either in near-interface deep ambipolar states or in quantum wells/dots, either serving as ambipolar traps in semiconductor layers or in gate dielectric/barrier layers. In either case, the potential barrier for trapping is small and retention is provided by carrier confinement in the deep trap states and/or quantum wells/dots. The device architectures are usable as three terminal or two terminal devices. 1. An ambipolar synaptic device comprising:an organic semiconductor layer including traps configured for trapping, de-trapping and/or recombination of both electrons and holes;a gate operatively associated with the organic semiconductor layer;a first structure configured for injecting both electrons and holes into the semiconductor layer;an inorganic channel layer;source and drain regions operatively associated with the inorganic channel layer;a first dielectric layer between the organic semiconductor layer and the inorganic channel layer, anda second dielectric layer between the gate and the organic semiconductor layer,the inorganic channel layer and the first dielectric layer being configured such that conductivity of the inorganic channel layer is modulated depending on the polarity and amount of charge stored in the organic semiconductor layer.210-. (canceled)11. The ambipolar synaptic device of claim 1 , wherein the first structure includes a transition metal-oxide adjoining the organic semiconductor layer.12. The ambipolar synaptic device of claim 1 , further including a self-assembled monolayer of gold nanoparticles adjoining the first dielectric layer.13. An ambipolar synaptic device comprising:a semiconductor layer including a channel;a gate operatively associated with the semiconductor layer;a source/drain structure comprised of a highly doped region of a first doping type confined within a highly doped ...

FLEXIBLE ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

Embodiments relate to a method of forming an organic light emitting diode (OLED) display device. A first inorganic layer, a first organic layer, and a second inorganic layer are formed on pixel regions of an OLED display device. At least part of a first inorganic layer is formed using atomic layer deposition (ALD), such that the first inorganic layer completely covers particles generated on the OLED. Embodiments also relate to an OLED display device with pixel regions, each pixel region including an OLED, a bank layer across a boundary between adjacent pixel regions, and a first inorganic layer on at least a portion of the OLED and the bank layer. The first inorganic layer includes a first inorganic sub-layer and a second inorganic sub-layer. 1. A method of forming an organic light emitting diode (OLED) display device , comprising:forming a plurality of pixel regions on a display area of a flexible substrate, each of the pixel regions including an OLED;forming at least part of a first inorganic layer on the plurality of pixel regions using atomic layer deposition (ALD) or plasma-enhanced chemical vapor deposition (PECVD);forming a first organic layer; andforming a second inorganic layer using PECVD.2. The method of claim 1 , wherein the entire first inorganic layer is formed using ALD.3. The method of claim 1 , wherein forming at least part of the first inorganic layer comprises:forming a first inorganic sub-layer of the first inorganic layer using ALD; andforming a second inorganic sub-layer of the first inorganic layer using PECVD.4. The method of claim 3 , wherein the second inorganic sub-layer is formed on the first inorganic sub-layer.5. The method of claim 3 , wherein the first inorganic sub-layer is formed on the second inorganic sub-layer.6. The method of claim 1 , further comprising forming a second organic layer on the second inorganic layer.7. The method of claim 6 , wherein a thickness of the first organic layer is larger than a thickness of the second ...

OPTOELECTRONIC DEVICE INCLUDING A LIGHT TRANSMISSIVE REGION

An electroluminescent device includes: (1) a first region, a second region, and an intermediate region arranged between the first region and the second region; (2) a conductive coating disposed in the second region; and (3) a nucleation inhibiting coating disposed in the first region, the nucleation inhibiting coating extending to cover at least a portion of the intermediate region, wherein a thickness of the nucleation inhibiting coating in the intermediate region is less than a thickness of the nucleation inhibiting coating in the first region, and wherein a surface of the nucleation inhibiting coating in the first region is substantially free of the conductive coating. 1. An electroluminescent device comprising:a first region, a second region, and an intermediate region arranged between the first region and the second region;a conductive coating disposed in the second region; anda nucleation inhibiting coating disposed in the first region, the nucleation inhibiting coating extending to cover at least a portion of the intermediate region,wherein a thickness of the nucleation inhibiting coating in the intermediate region is less than a thickness of the nucleation inhibiting coating in the first region, andwherein a surface of the nucleation inhibiting coating in the first region is substantially free of the conductive coating.2. The electroluminescent device of claim 1 , wherein the conductive coating extends to cover at least a portion of the intermediate region.3. The electroluminescent device of claim 2 , wherein the conductive coating has a first thickness in the intermediate region claim 2 , and a second thickness in the second region claim 2 , the second thickness being greater than the first thickness.4. The electroluminescent device of claim 3 , wherein the first thickness is less than or equal to about 10% of the second thickness.5. The electroluminescent device of claim 3 , wherein the second thickness is from about 5 nm to about 40 nm.6. The ...

ORGANIC TANDEM PHOTOVOLTAIC DEVICE AND METHODS

An organic tandem photovoltaic device includes a first electrode, a second electrode spaced apart from said first electrode, first and second photoactive organic bulk heterojunction layers, and an interconnecting layer. The interconnecting layer is between and electrically connects the first and second photoactive organic bulk heterojunction layers. The interconnecting layer includes an electron extracting interface layer of a first inorganic material and a hole extracting interface layer of a second inorganic material. 1. An organic tandem photovoltaic device , comprising:a first electrode;a second electrode spaced apart from said first electrode;first and second photoactive organic bulk heterojunction layers; andan interconnecting layer between and electrically connecting said first and second photoactive organic bulk heterojunction layers,wherein said interconnecting layer comprises an electron extracting interface layer of a first inorganic material and a hole extracting interface layer of a second inorganic material.21. The organic tandem photovoltaic device according to , wherein said interconnecting layer further comprises a recombination layer of a third material.32. The organic tandem photovoltaic device according to , wherein said third material comprises indium-tin-oxide nanoparticles.41. The organic tandem photovoltaic device according to , wherein said first inorganic material comprises zinc oxide nanoparticles and said second inorganic material comprises vanadium oxide nanoparticles.51. The organic tandem photovoltaic device according to , wherein said first inorganic material comprises zinc oxide nanoparticles and said second inorganic material comprises molybdenum trioxide.6. The organic tandem photovoltaic device according to claim 1 , further comprising a hole transporting layer and an electron transporting layer claim 1 ,wherein said first photoactive organic bulk heterojunction layer is disposed between said hole extracting interface layer and ...

Illuminating device and manufacturing method thereof

An illuminating device is provided, which includes: a substrate ( 110, 210 ), and a light source ( 120, 220 ) and a light-emitting layer ( 131, 132, 133, 231, 232, 233 ) which are disposed on the substrate ( 110, 210 ). A wavelength of light emitted by the light source ( 120, 220 ) is smaller than a wavelength of light emitted after the light-emitting layer ( 131, 132, 133, 231, 232, 233 ) is excited, the light emitted by the light source ( 120, 220 ) is adapted for exciting the light-emitting layer ( 131, 132, 133, 231, 232, 233 ) to emit light, and the light-emitting layer ( 131, 132, 133, 231, 232, 233 ) is made from a long-persistence material. The illuminating device achieves emergency lighting in the case of no power supply.

ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND FABRICATING METHOD THEREOF

An OLED display device is discussed which can include: a first substrate defined into an emission region and a non-emission region; a first electrode formed on the first substrate; a bank pattern configured to expose a part of the first electrode corresponding to the emission region; an organic emission layer formed on the exposed part of the first electrode corresponding to the emission region; a second electrode which includes a first conductive layer formed on the organic emission layer and a second conductive layer formed on the second conductive layer. The first conductive layer is formed from an alloy of magnesium (Mg) and silver (Ag), and the second conductive layer is formed from silver (Ag). Such an OLED display device allows the second electrode to include the first conductive layer and the second conductive layer. As such, a large-sized display device with low resistance and high transmittance can be realized. 1. An organic light emitting diode display device comprising:a first substrate defined into an emission region and a non-emission region;a first electrode disposed on the first substrate;a bank pattern configured to expose a part of the first electrode opposite to the emission region;an organic emission layer disposed on the exposed part of the first electrode corresponding to the emission region; anda second electrode which includes a first conductive layer formed on the organic emission layer and a second conductive layer on the first conductive layer,wherein the first conductive layer includes an alloy of magnesium (Mg) and silver (Ag), and the second conductive layer includes silver (Ag).2. The organic light emitting diode display device of claim 1 , wherein the first conductive layer and the second conductive layer of the second electrode are disposed on an entire surface of the first substrate.3. The organic light emitting diode display device of claim 1 , wherein the first conductive layer has a thickness in a range of about 2 Ř200 Å.4. The ...

Solar cell and method of manufacturing the same

A solar cell is provided, and has an organic light-absorbing layer having a perovskite structure, and a hole transport layer disposed on a first surface of the organic light-absorbing layer. The hole transport layer is made of a nickel oxide. A method of manufacturing a solar cell is provided, and has the steps of (1) providing a hole transport layer which is made of a nickel oxide; (2) forming an organic light-absorbing layer having a perovskite structure, which has a first surface on which the hole transporting layer is disposed, and a second surface opposite to the first surface; and (3) forming an electron transport layer on the second surface of the organic light-absorbing layer.

LIGHT-EMITTING COMPOSITE FILM, ITS MANUFACTURE METHOD, AND WHITE LIGHT ORGANIC ELECTROLUMINESCENT DEVICE

Disclosed are a light-emitting composite film, its manufacture method, and a white light organic electroluminescent device. Said light-emitting composite film comprises a first light-emitting layer and a second light-emitting layer. The first light-emitting layer comprises polyfluorene or polyfluorene derivatives, and the second light-emitting layer comprises quantum dots. A variety of color gamut and an improved brightness of devices can be achieved by the light-emitting composite film. 1. A light-emitting composite film , which comprises a first light-emitting layer comprising polyfluorene or polyfluorene derivatives and a second light-emitting layer comprising quantum dots.2. The light-emitting composite film according to claim 1 , wherein claim 1 ,said polyfluorene derivatives include: poly(9,9-dialkylfluorene), poly(dihexylfluorene-co-anthracene), polyfluorenes with biphenyl dendron side chains, tetraalkyl-substituted polyindenofluorenes, aryl-substituted polyindenofluorenes, polyfluorenes with anthracene-alkyl fluorene emission block connected to triphenylamine at both ends, polyfluorenes with anthracene-alkyl fluorene emission block connected to oxadiazole at both ends, poly(fluorene-alt-bithiophene), poly(dioctylfluorene-alt-benzothiadiazole), poly(fluorene-co-phenylpyridine) bearing an iridium complex in the polymer backbone, or binary or ternary random copolymers of fluorene and thiophene, ethylenedioxythiophene, 4,7-dithienyl-2,1,3-benzothiadiazole, or 4,7-dithienyl-2,1,3-benzoselenadiazole.3. The light-emitting composite film according to claim 1 , wherein claim 1 ,said quantum dots include compounds of Group II element and Group VI element, or compounds of Group IR element and Group V element.4. A manufacture method for a light-emitting composite film claim 1 , comprising claim 1 ,making a solution of polyfluorene compound(s) by dispersing polyfluorene or its derivatives in a first solvent, and making a solution of quantum dots by dispersing quantum ...

ORGANIC ELECTROLUMINESCENCE DEVICE

The present invention aims to provide an organic electroluminescence device that operates successfully without strict sealing. Provided is an organic electroluminescence device having a structure in which a plurality of layers is stacked between an anode and a cathode formed on a substrate, wherein the organic electroluminescence device is sealed to provide a water vapor transmission rate of 10to 10g/m·day. 1. An organic electroluminescence device comprising a structure in which a plurality of layers is laminated between an anode and a cathode formed on a substrate;{'sup': −6', '−3', '2, 'wherein the organic electroluminescence device is sealed to provide a water vapor transmission rate of 10to 10g/m·day.'}2. The organic electroluminescence device according to claim 1 ,wherein the organic electroluminescence device comprises a metal oxide layer between the anode and the cathode.3. The organic electroluminescence device according to claim 1 ,wherein the organic electroluminescence device comprises a buffer layer formed from a material containing an organic compound,the material containing an organic compound contains 0.1 to 15% by mass of a reducing agent relative to the amount of the organic compound, andthe buffer layer has an average thickness of 5 to 30 nm.4. The organic electroluminescence device according to claim 1 ,wherein the organic electroluminescence device comprises a buffer layer formed from a material containing an organic compound,the material containing an organic compound contains 0 to 0.1% by mass of a reducing agent relative to the amount of the organic compound, andthe buffer layer has an average thickness of 5 to 60 nm.5. A film material for use in forming the organic electroluminescence device as defined in claim 1 ,{'sup': −6', '−3', '2, 'wherein the thin film material essentially comprises a film having a water vapor transmission rate or 10to 10g/m·day.'}6. A display device comprising the organic electroluminescence device as defined in .7. A ...

ORGANIC ELECTROLUMINESCENT ELEMENT AND METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENT ELEMENT

This organic electroluminescent element is provided with the following: a barrier layer that is provided on a flexible substrate and comprises a modified-polysilazane layer; a laminate that is laid out on top of the barrier layer and is provided with an organic functional layer that has at least one light-emitting layer between a pair of electrodes; a covering intermediate layer formed on top of the barrier layer at least at the periphery of the laminate; and a sealing member joined to the top of the covering intermediate layer with a sealing resin layer interposed therebetween. 1. An organic electroluminescent element which is solid-sealed by a flexible substrate and a sealing member joined , by a sealing resin layer , to the flexible substrate , the element comprising:a barrier layer that is provided on a flexible substrate and comprises a modified-polysilazane layer;a laminate that is laid out on top of the barrier layer and is provided with an organic functional layer that has at least one light-emitting layer between a pair of electrodes;a covering intermediate layer formed on top of the barrier layer at least at the periphery of the laminate; anda sealing member joined to the top of the covering intermediate layer with a sealing resin layer interposed therebetween.2. The organic electroluminescent element according to claim 1 , wherein the sealing resin layer includes a thermosetting resin.3. The organic electroluminescent element according to claim 1 , wherein the covering intermediate layer covers the laminated body.4. The organic electroluminescent element according to claim 1 , wherein the covering intermediate layer contains silicon nitride.5. The organic electroluminescent element according to claim 1 , wherein the barrier layer is a laminated structure of a first barrier layer and a second barrier layer claim 1 , and the second barrier layer is provided on the flexible substrate claim 1 , and the first barrier layer is provided on the second barrier ...

DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

It is an object of the present invention to form a pixel electrode and a metal film using one resist mask in manufacturing a stacked structure by forming the metal film over the pixel electrode. A conductive film to be a pixel electrode and a metal film are stacked. A resist pattern having a thick region and a region thinner than the thick region is formed over the metal film using an exposure mask having a semi light-transmitting portion. The pixel electrode, and the metal film formed over part of the pixel electrode to be in contact therewith are formed using the resist pattern. Accordingly, a pixel electrode and a metal film can be formed using one resist mask. 1. (canceled)2. A display device comprising:a gate electrode over a first substrate;a gate insulating film over the gate electrode;a semiconductor film over the gate insulating film;a source electrode over the semiconductor film;a drain electrode over the semiconductor film;an interlayer insulating film over the source electrode and the drain electrode;a transparent conductive film over the interlayer insulating film;a metal film over the transparent conductive film;a layer containing liquid crystal over the metal film;a light-blocking film over the layer containing liquid crystal; anda second substrate over the light-blocking film,wherein the transparent conductive film comprises a first region which is in contact with the metal film and a second region which is not in contact with the metal film,wherein the first region of the transparent conductive film is in contact with one of the source electrode and the drain electrode in a contact hole provided in the interlayer insulating film,wherein the second region of the transparent conductive film is a pixel electrode, andwherein the light-blocking film overlaps with the first region of the transparent conductive film.3. The display device according to claim 2 ,wherein an area of the metal film is smaller than an area of the transparent conductive film, ...

ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR

An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a photoelectric conversion region including a p-type light-absorbing material and an n-type light-absorbing material and a doped region including an exciton quencher and at least one of the p-type light-absorbing material and the n-type light-absorbing material, wherein at least one of the p-type light-absorbing material and the n-type light-absorbing material selectively absorbs a part of visible light, and an image sensor includes the same. 1. An organic photoelectronic device , comprising:a first electrode and a second electrode facing each other; and a photoelectric conversion region including a p-type light-absorbing material and an n-type light-absorbing material, and', 'a doped region including an exciton quencher and at least one of the p-type light-absorbing material and the n-type light-absorbing material,, 'a light-absorption layer between the first electrode and the second electrode, the light-absorption layer including,'}wherein at least one of the p-type light-absorbing material and the n-type light-absorbing material selectively absorbs a part of visible light.2. The organic photoelectronic device of claim 1 , whereinthe photoelectric conversion region includes a first photoelectric conversion region nearer to the first electrode and a second photoelectric conversion region nearer to the second electrode, andthe doped region is between the first photoelectric conversion region and the second photoelectric conversion region.3. The organic photoelectronic device of claim 2 , whereinthe second electrode is nearer to a light incidence side than the first electrode, anda thickness of the second photoelectric conversion region is the same as or larger than a thickness of the first photoelectric conversion region.4. The organic photoelectronic device of claim 1 , ...

DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

A display device includes: a substrate including a display area and a non-display area; and a touch unit on the substrate, wherein the touch unit includes: a first inorganic insulating layer in the display area; a first conductive layer on the first inorganic insulating layer; a first organic layer on the first conductive layer; a second conductive layer on the first organic layer and electrically connected to the first conductive layer through a first contact hole in the first organic layer; and a second organic layer on the second conductive layer so as to cover a lateral surface and a top surface of the second conductive layer and including a photosensitive material. 1. A display device comprising:a substrate including a display area and a non-display area; anda touch unit on the substrate,wherein the touch unit includes:a first inorganic insulating layer in the display area;a first conductive layer on the first inorganic insulating layer;a first organic layer on the first conductive layer;a second conductive layer on the first organic layer and electrically connected to the first conductive layer through a first contact hole in the first organic layer; anda second organic layer on the second conductive layer so as to cover a lateral surface and a top surface of the second conductive layer and including a photosensitive material.2. The display device of claim 1 , whereinthe non-display area includes a wiring area and a pad area each on one side of the display area, andthe display device further includes: a first layer in the wiring area;a first wiring layer on the first layer and including a same material as that of the first conductive layer;a second layer on the first wiring layer;a second wiring layer on the second layer so as to be electrically connected to the first wiring layer through a second contact hole defined in the second layer and including a same material as that of the second conductive layer; anda third layer on the second wiring layer so as to ...

DISPLAY DEVICE

A display device includes a base layer including an active area and a peripheral area outside the active area, a circuit element layer including a pixel circuit in the active area and a driving voltage wiring located in the peripheral area to supply a driving voltage to the pixel circuit. A light emitting element layer including a plurality of light emitting elements on the circuit element layer, a thin film sealing layer to cover the light emitting element layer, and an input sensing layer on the thin film sealing layer and including a sensing electrode and a sensing signal wiring part connected to the sensing electrode. The circuit element layer includes a connection wiring part overlapping the driving voltage wiring in the peripheral area and contacts the sensing signal wiring part. The connection wiring part is at a different layer from the driving voltage wiring. 1. A display device comprising:a base layer having an active area and a peripheral area located outside the active area;a circuit element layer comprising a pixel circuit located in the active area of the base layer and a driving voltage wiring located in the peripheral area of the base layer to supply a driving voltage to the pixel circuit;a light emitting element layer comprising a plurality of light emitting elements on the circuit element layer;a thin film sealing layer configured to cover the light emitting element layer; andan input sensing layer on the thin film sealing layer, the input sensing layer comprising a sensing electrode and a sensing signal wiring part connected to the sensing electrode,wherein the circuit element layer comprises a connection wiring part overlapping the driving voltage wiring in the peripheral area and configured to contact the sensing signal wiring part,wherein the connection wiring part is located at a different layer from the driving voltage wiring.2. The display device of claim 1 , wherein the sensing electrode comprises:a first sensing electrode; anda second ...

DISPLAY APPARATUS

Provided is a display apparatus including a substrate having an island and a plurality of connection parts extending in different directions from an end of the island and connected to different islands; a display region disposed on the island and including a display element connected to a common electrode; a common voltage power line disposed on the island and on at least one first connection part of the plurality of connection parts extending from the island; and at least one contact portion disposed on the at least one first connection part, wherein the at least contact portion is connected to the common electrode and the common voltage line. 1. A display apparatus comprising:a substrate comprising an island and a plurality of connection parts extending from an end of the island and connected to different islands;a display region disposed on the island and comprising a display element;a common voltage power line disposed on the island and on at least one first connection part of the plurality of connection parts extending from the island; andat least one contact portion disposed on the at least one first connection part, wherein the at least one contact portion is connected to a common electrode of the display element and the common voltage line.2. The display apparatus of claim 1 , further comprising:a driving voltage power line disposed on at least one of the islands,wherein the driving voltage power line is disposed on a layer different from a layer where the common voltage power line is disposed.3. The display apparatus of claim 2 , whereinthe driving voltage power line is disposed on the at least one first connection part and is arranged to overlap the common voltage power line.4. The display apparatus of claim 2 , whereina width of the common voltage power line is greater than a width of the driving voltage power line.5. The display apparatus of claim 1 , further comprising:a thin film transistor disposed on the island and connected to the display element; ...

CONDUCTIVE POLYMERS, THE ORGANIC PHOTOVOLTAIC CELL COMPRISING THE SAME, AND THE SYNTHESIS THEREOF

The present invention relates to a conductive polymer, the organic photovoltaic cell comprising the same, and the synthesis method of the same. The novel polymer, according to the present invention, displays more excellent optical properties and higher photoelectric conversion efficiency than the conventional RRa (regiorandom) polymer due to its symmetrical structure of quaterthiophene and benzothiadiazole substituted with fluorine. 2. The polymer compound according to claim 1 , wherein the R in formula 1 is independently selected from the group consisting of ethylhexyl claim 1 , butyloctyl claim 1 , hexyldecyl claim 1 , and octyldodecyl.4. An organic photovoltaic cell comprising a cathode and an anode opposite to each other; and at least one photoactive layer in between the anode and the cathode claim 1 , wherein the photoactive layer contains the compound of as an electron donor and an electron acceptor.5. The organic photovoltaic cell according to claim 4 , wherein the electron acceptor is one or more materials selected from the group consisting of fullerene (C60) claim 4 , fullerene derivative claim 4 , perylene claim 4 , perylene derivative claim 4 , and semiconductor nanoparticle.6. The organic photovoltaic cell according to claim 5 , wherein the fullerene derivative is [6 claim 5 ,6]-phenyl-C61-butyric acid methyl ether (PCBM) or [6 claim 5 ,6]-phenyl-C71-butyric acid methyl ether (PC71BM).8. The method for preparing the polymer represented by formula 1 according to claim 7 , wherein the R in the formulas above is independently selected from the group consisting of ethylhexyl claim 7 , butyloctyl claim 7 , hexyldecyl claim 7 , and octyldodecyl.9. The method for preparing the polymer represented by formula 1 according to claim 7 , wherein the palladium catalyst is selected from the group consisting of PdCl2 claim 7 , Pd(OAc)2 claim 7 , Pd(CH3CN)2Cl2 claim 7 , Pd(PhCN)2Cl2 claim 7 , Pd2(dba)3 claim 7 , and Pd(PPh3)4.10. The method for preparing the polymer ...

Method for making nano-heterostructure

The present disclosure relates to a method for making nanoscale heterostructure. The method includes: forming a first carbon nanotube layer on a support, the first carbon nanotube layer includes a number of first carbon nanotubes; forming a semiconductor layer on a surface of the first carbon nanotube layer; covering a second carbon nanotube layer on the semiconductor layer, the second carbon nanotube layer includes a number of second carbon nanotubes; finding and labeling a first metal carbon nanotube and a semiconductor carbon nanotube parallel to and spaced away from the first metal carbon nanotube; finding and labeling a second metal carbon nanotube, an extending direction of the second metal carbon nanotube is crossed with an extending direction of the first metal carbon nanotube and the semiconductor carbon nanotube; removing the other carbon nanotubes; and annealing the above structure.

Carbon dot multicolor phosphors

Carbon dots synthesized from p-phenylenediamine in diphenyl ether exhibit excitation wavelength independent long wavelength multicolor emissions (green to red) when they are dispersed in different solvents and polymers. The emissions are excitation wavelength independent and one excitation light can excite all the colors.

DISPLAY DEVICE, BONDING JIG, BONDING DEVICE, AND STRETCHING JIG USED FOR MANUFACTURING THE DISPLAY DEVICE, AND METHOD FORMANUFACTURING DISPLAY DEVICE

Provided is a display device that includes a display panel having flexibility (an organic EL panel as an example), and an optical member having flexibility, arranged so as to be stacked on the display panel, wherein the display panel and the optical member are stacked and bonded in a bent state, and thereafter stretched into a flat shape. 1. A display device comprising:a display panel having flexibility; andan optical member arranged so as to be stacked on the display panel,wherein the display panel and the optical member are stacked and bonded in a bent state, and thereafter stretched into a flat shape.2. The display device according to claim 1 ,wherein the display panel includes a moisture-proof layer that has a moisture-proof function and a sealing film, andthe moisture-proof layer and the sealing film are formed on an outer side with respect to a midpoint between a neutral axis of the display device in the thickness direction and an outer surface of the display device.3. A bonding jig used for manufacturing the display device according to claim 1 , the bonding jig having:a first flat surface;a second flat surface opposed to the first flat surface; anda curved surface extended between the first flat surface and the second flat surface,wherein the first flat surface, the curved surface, and the second flat surface are used when the display panel and the optical member are bonded along these surfaces.4. A bonding device used for manufacturing the display device according to claim 1 , the bonding device comprising:an outer roller that is rotationally movable; andan inner roller that is rotationally movable,wherein the outer roller and the inner roller rotationally move in a state in which the display panel and the optical member are interposed therebetween, so that the display panel and the optical member are bent in a desired shape.5. A stretching jig used for manufacturing the display device according to claim 1 , the stretching jig comprising:a first surface part ...

LIGHT-EMITTING DEVICES WITH IMPROVED LIGHT OUTCOUPLING

Optoelectronic devices that include a composite film in a multilayered encapsulation stack are provided. Also provided are methods of forming the light reflection-modifying structures, as well as other polymeric device layers, using inkjet printing. The composite films include a first, lower refractive index domain and a second, higher refractive index domain. 1. An optoelectronic device comprising:at least one active region; and an inorganic barrier layer;', 'a composite film adjacent to the inorganic barrier layer and comprising a first domain and a second domain, the second domain comprising a plurality of sub-domains, wherein the second domain has a higher index of refraction than the first domain., 'a multilayered encapsulation stack disposed over the at least one active region, the multilayered encapsulation stack comprising2. The optoelectronic device of claim 1 , wherein the optoelectronic device is an organic light-emitting diode device and the at least one active region comprises a light-emitting pixel.3. The optoelectronic device of claim 1 , wherein the second domain comprise inorganic particles dispersed in a polymeric matrix.4. The optoelectronic device of claim 1 , wherein the inorganic barrier layer comprises silicon nitride claim 1 , silicon oxide claim 1 , or silicon oxynitride.5. The optoelectronic device of claim 4 , wherein the second domain comprise zirconium oxides claim 4 , titanium oxides claim 4 , hafnium oxides claim 4 , zinc oxides claim 4 , or a mixture of two or more thereof dispersed in a polymeric matrix.6. The optoelectronic device of claim 1 , wherein the second domain comprise zirconium oxides claim 1 , titanium oxides claim 1 , hafnium oxides claim 1 , zinc oxides claim 1 , or a mixture of two or more thereof dispersed in a polymeric matrix.7. The optoelectronic device of claim 6 , wherein the polymeric matrix is an acrylic matrix.8. The optoelectronic device of claim 1 , wherein the sub-domains are dome-shaped.9. The ...

ORGANIC LIGHT EMITTING DIODE (OLED) DISPLAY PANEL AND ELECTRONIC DEVICE

An organic light emitting diode (OLED) display panel and an electronic device are provided. The OLED display panel includes a flexible polymer substrate, a first inorganic layer, a second inorganic layer, and an OLED array layer; the first inorganic layer and the second inorganic layer formed over opposite surfaces of the flexible polymer substrate, and the OLED array layer formed on a side of the first inorganic layer away from the flexible polymer substrate. 1. An electronic device , comprising an organic light emitting diode (OLED) display panel , wherein the OLED display panel comprises a flexible polymer substrate , a first inorganic layer , a second inorganic layer , and an OLED array layer; andthe first inorganic layer and the second inorganic layer formed over opposite surfaces of the flexible polymer substrate, and the OLED array layer formed on a side of the first inorganic layer away from the flexible polymer substrate.2. The electronic device of claim 1 , wherein the OLED display panel further comprises an organic layer formed on a side of the second inorganic layer away from the flexible polymer substrate.3. The electronic device of claim 2 , wherein the OLED display panel comprises at least one photosensitive region claim 2 , the at least one photosensitive region of the OLED display panel formed with a recess claim 2 , and the recess penetrates a portion of the organic layer along a first direction that is a direction in which the organic layer faces the flexible polymer substrate.4. The electronic device of claim 3 , wherein the recess penetrates through entire organic layer along the first direction claim 3 , or the recess penetrates through the entire organic layer and a portion of the second inorganic layer along the first direction.5. The electronic device of claim 3 , wherein the electronic device further comprises an optical sensor disposed in the recess claim 3 , and the optical sensor has a size along the first direction that is less than or ...

IMAGING DEVICE INCLUDING PHOTOELECTRIC CONVERSION LAYER

An imaging device includes a photoelectric converter including first and second electrodes, a photoelectric conversion layer therebetween, and a hole-blocking layer between the first electrode and the photoelectric conversion layer; and a signal detection circuit electrically connected to the first electrode. The hole-blocking material has an electron affinity lower than both a work function of the first conducting material and an electron affinity of the first photoelectric conversion material. The photoelectric conversion unit is applied with a voltage between the first and second electrodes, and responsive to the voltage within a range from a first voltage to a second voltage, shows that a density of current passing between the first and second electrodes when light is incident on the photoelectric conversion layer becomes substantially equal to that when no light is incident thereon. A difference between the first voltage and the second voltage is 0.5 V or more. 1. An imaging device comprising unit pixels , each unit pixel including: a first electrode including a first conducting material,', 'a second electrode facing the first electrode,', 'a photoelectric conversion layer between the first and second electrodes, the photoelectric conversion layer including a first photoelectric conversion material, and', 'a hole-blocking layer between the first electrode and the photoelectric conversion layer, the hole-blocking layer including a hole-blocking material; and, 'a photoelectric conversion unit includinga signal detection circuit electrically connected to the first electrode, whereinthe hole-blocking material has an electron affinity lower than both a work function of the first conducting material and an electron affinity of the first photoelectric conversion material.the photoelectric conversion unit is adapted to be applied with a voltage between the first electrode and the second electrode, and the photoelectric conversion unit has a characteristic, responsive ...

DOUBLE-SIDED ORGANIC LIGHT-EMITTING DIODE LIGHTING PANEL

Disclosed is a double-sided organic light-emitting diode lighting panel. A semitransparent silver film layer is provided between a first light-emitting layer that emits blue light and a second light-emitting layer that emits yellow light. Double-sided light emission of the OLED lighting panel is realized by taking advantage of semi-transparence and reflection properties of the silver film layer. Such a structure is relatively simple, and manufacture costs and manufacture difficulties are reduced. The OLED lighting panel can be used for interior lighting or can be used in places having special needs, and thus application of a double-sided OLED lighting device is widened. 1. A double-sided organic light-emitting diode lighting panel , wherein a semitransparent silver film layer is provided between a first light-emitting layer and a second light-emitting layer of a double-layer organic light-emitting diode.2. The organic light-emitting diode lighting panel according to claim 1 , wherein when the first light-emitting layer emits blue light claim 1 , the second light-emitting layer emits yellow light claim 1 , whereas when the first light-emitting layer emits yellow light claim 1 , the second light-emitting layer emits blue light.3. The organic light-emitting diode lighting panel according to claim 2 , comprising:a substrate;an anode, which is formed on the substrate;a hole injection layer, which is formed on the anode;a first hole transport layer, which is formed on the hole injection layer;a first light-emitting layer, which is formed on the first hole transport layer;a first electron transport layer, which is formed on the first light-emitting layer;an N-type charge generation layer, which is formed on the first electron transport layer;a semitransparent silver film layer, which is formed the N-type charge generation layer;a P-type charge generation layer, which is formed on the semitransparent silver film layer;a second hole transport layer, which is formed on the P- ...

OXIDE SEMICONDUCTOR TRANSISTOR

A display device includes a driving transistor and an organic EL element. The driving transistor includes an oxide semiconductor layer; a first gate electrode that region overlapping the oxide semiconductor layer; a first insulting layer between the first gate electrode and the oxide semiconductor layer; a second gate electrode that includes a region overlapping the oxide semiconductor layer and the first gate electrode; a second insulating layer between the second gate electrode and the oxide semiconductor layer; and a first and a second transparent conductive layer that are provided between the oxide semiconductor layer and the first insulating layer and each include a region contacting the oxide semiconductor layer. The organic EL element includes a first electrode; a second electrode; a light emitting layer between the first electrode and the second electrode; and an electron transfer layer between the light emitting layer and the first electrode. 1. A transistor , comprising:an oxide semiconductor layer over a substrate;a first gate electrode arranged on a side of the oxide semiconductor layer opposite to the substrate and including a region overlapping the oxide semiconductor layer,a first insulating layer between the first gate electrode and the oxide semiconductor layer; anda first transparent conductive layer and a second transparent conductive layer arranged on a side of the oxide semiconductor layer to the substrate,whereinthe first transparent conductive layer and the second transparent conductive layer are spaced apart from each other,the first gate electrode has a region overlapping a region where the first transparent conductive layer and the second transparent conductive layer are spaced apart from each other, andthe first transparent conductive layer and the second transparent conductive layer are in contact with the oxide semiconductor layer.2. The transistor according to claim 1 ,wherein a surface of the oxide semiconductor layer facing the ...

METHOD OF FORMING CONDUCTIVE POLYMER THIN FILM PATTERN

Disclosed is a method of forming a conductive polymer thin film pattern, including (a) Coating substrate with solution including PEDOT:PSS (poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)) to form coating layer including solution on substrate, (b) irradiating a predetermined portion of the coating layer with light, thus manufacturing a pre-patterned substrate including PEDOT:PSS patterned on the predetermined portion and the coating layer other than the predetermined portion, and (c) removing the coating layer from the pre-patterned substrate, thus manufacturing a conductive polymer thin film having a PEDOT:PSS pattern. When the pattern formation method of the invention is applied, a pattern can be formed by directly irradiating a PEDOT:PSS solution with a laser, there is no need for additional drying, thus simplifying the processing and reducing the processing time, and a thin film for use in a transparent electrode can be manufactured, thereby improving the conductivity, transmittance, flatness and precision of the electrode. 1. A method of forming a conductive polymer thin film pattern , comprising:(a) coating a substrate with a solution including PEDOT:PSS (poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)), thus forming a coating layer including the solution on the substrate;(b) irradiating a predetermined portion of the coating layer with light, thus manufacturing a pre-patterned substrate including PEDOT:PSS patterned on the predetermined portion and the coating layer other than the predetermined portion; and(c) removing the coating layer from the pre-patterned substrate, thus manufacturing a conductive polymer thin film having a PEDOT:PSS pattern.2. The method of claim 1 , wherein the light includes at least one selected from among a laser claim 1 , a multi-wavelength lamp claim 1 , a xenon lamp claim 1 , a single-wavelength lamp claim 1 , a monochromator claim 1 , a flash lamp claim 1 , and an optical tool using the laser claim 1 , the multi ...

LAYERED METAL OXIDE FIELD EFFECT MATERIAL AND ITS APPLICATION

A layered metal oxide field effect material forms a heterojunction from metal oxides with different band gaps, and defines a band gap difference (ΔE)≥1 eV. Band bending is generated at the interface of the heterojunction, such that a potential barrier is formed on the side with the larger band gap and a triangular potential well is formed on the side with the smaller band gap, and under the induction of a gate electric field, a polarized charge is generated at the interface of the heterojunction, and a large number of carriers are accumulated. Therefore, the present layered metal oxide field effect material has high carrier mobility higher than 10cm/V·s, and overcomes the problem that the carrier mobility of a conventional metal oxide field effect material is low, it is required to fabricate the metal oxide field effect material into a crystal phase structure with a relatively high cost, and even that a substrate thereof with a crystal phase structure is required. 1. A layered metal oxide field effect material with a sandwich structure which sequentially comprises a first surface layer , a core layer and a second surface layer , the core layer being a metal oxide layer with a wide band gap , the first surface layer and the second surface layer being metal oxide layers with narrow band gaps; wherein , the band gap of the metal oxide in the core layer is ≥3 eV , the band gaps of the metal oxides in the first surface layer and the second surface layer are independently ≤3 eV , and the difference between the band gap of the metal oxide in the core layer and the band gap of the metal oxide in the first surface layer is ≥1 eV.2. The layered metal oxide field effect material according to claim 1 , wherein the thickness of the layered metal oxide field effect material is ≤30 nm.3. The layered metal oxide field effect material according to claim 1 , wherein the thicknesses of the first surface layer claim 1 , the second surface layer and the core layer are independently ≤10 ...

Active OLED Display, Method for Preparing an Active OLED Display and Compound

The present invention relates to a display device comprising—a plurality of OLED pixels comprising at least two OLED pixels, the OLED pixels comprising an anode, a cathode, and a stack of organic layers, wherein the stack of organic layers—is arranged between and in contact with the cathode and the anode, and—comprises a first electron transport layer, a first hole transport layer, and a first light emitting layer provided between the first hole transport layer and the first electron transport layer, and—a driving circuit configured to separately driving the pixels of the plurality of OLED pixels, wherein, for the plurality of OLED pixels, the first hole transport layer is provided in the stack of organic layers as a common hole transport layer shared by the plurality of OLED pixels, and the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal salts and from electrically neutral metal complexes comprising a metal cation and at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals; alkaline earth metals, Pb, Mn, Fe, Co, Ni, Zn, Cd; rare earth metals in oxidation state (II) or (III); Al, Ga, In; and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (IV) or less, a method for preparing the display device and a chemical compound for use therein. 1. Display device comprisinga plurality of OLED pixels comprising at least two OLED pixels, the OLED pixels comprising an anode, a cathode, and a stack of organic layers, wherein the stack of organic layersis arranged between and in contact with the cathode and the anode, andcomprises a first electron transport layer, a first hole transport layer, and a first light emitting layer provided between the first hole transport layer and the first electron ...

LAYERED METAL OXIDE FIELD EFFECT ELECTRODE

A layered metal oxide field effect electrode includes multiple metal strips and layered metal oxide films. The band gap width of the first thin metal oxide film material is less than 3 eV; the band gap width of the second thin metal oxide film material is greater than 3 eV; the band gap width of the third thin metal oxide film material is less than 3 eV; the difference between the band gap width of the second thin metal oxide film material and the band gap width of the first thin metal oxide film material is greater than 1 eV; the difference between the band gap width of the second thin metal oxide film material and the band gap width of the third thin metal oxide film material is greater than 1 eV; and the thicknesses of the first thin metal oxide film, the second thin metal oxide film, and the third thin metal oxide film are each smaller than or equal to 10 nm. The layered metal oxide field effect electrode has the advantages of high light transmittance and a good field conduction performance. 1. A layered metal oxide field effect electrode , comprising:multiple metal strips and thin layered metal oxide films;the thin layered metal oxide films comprise a first thin metal oxide film, a second thin metal oxide film, and a third thin metal oxide film;The lower surface of the second thin metal oxide film is disposed on the upper surface of the first thin metal oxide film; the lower surface of the third thin metal oxide film is disposed on the upper surface of the second thin metal oxide film; the multiple metal strips are arranged on the lower surface of the first thin metal oxide film; and there is a gap between two adjacent ones of the metal strips;the band gap width of the first thin metal oxide film material is less than 3 eV; the band gap width of the second thin metal oxide film material is greater than 3 eV; the band gap width of the third thin metal oxide film material is less than 3 eV; the difference between the band gap width of the second thin metal oxide ...

DISPLAY PANELS, DISPLAY TERMINALS AND DISPLAY MOTHERBOARDS

A display panel, a display terminal and a display motherboard are provided. The display panel includes a pixel defining layer, an inorganic barrier layer, an organic light-emitting material layer, and a thin film encapsulation structure. The pixel defining layer is provided with a plurality of openings distributed in an array. The inorganic barrier layer is disposed in a part of the openings at a periphery of the pixel defining layer, and has a plurality of first grooves spaced apart on a side thereof. The organic light-emitting material layer is disposed in the part of the openings and formed on the inorganic barrier layer. The thin film encapsulation structure is disposed on the pixel defining layer, and the thin film encapsulation structure is filled in the first grooves and covers the organic light-emitting material layer. 1. A display panel , comprising:a pixel defining layer, provided with a plurality of openings arranged in an array;an inorganic barrier layer, disposed in a part of the openings at a periphery of the pixel defining layer, the inorganic barrier layer comprising a first plurality of grooves spaced apart on a side of the inorganic barrier layer;an organic light-emitting material layer, disposed in the part of the openings having the inorganic barrier layer, and formed on the inorganic barrier layer; anda thin film encapsulation structure, disposed on the pixel defining layer, the thin film encapsulation structure being filled in the first plurality of grooves and covering the organic light-emitting material layer.2. The display panel according to claim 1 , wherein a surface of the thin film encapsulation structure in contact with the organic light-emitting material layer is provided with a first plurality of protrusions cooperating with the first plurality of grooves.3. The display panel according to claim 2 , wherein the organic light-emitting material layer has a thickness less than a depth of the first plurality of grooves.4. The display panel ...

DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

A method of manufacturing a display apparatus having an organic EL element includes: a step of forming the organic EL element over a substrate made of a flexible substrate; and a step of forming a protecting film made of an inorganic insulating material so as to cover the organic EL element by using an ALD method. In the step of forming the protecting film , the protecting film is formed by alternately performing a step of forming a high-density layer H by using an ALD method and a step of forming, by using an ALD method, a low-density layer L that has the same constituent element as the high-density layer H and has a lower density than the high-density layer H. The protecting film has a layered structure made of one or more high-density layers H and one or more low-density layers L so that the low-density layer L and the high-density layer H are alternately layered so as to be in contact with each other. 1. A display apparatus comprising:a flexible substrate;an organic EL element formed over the flexible substrate; anda protecting film made of an inorganic insulating material formed so as to cover the organic EL element,wherein the protecting film has a layered structure made of one or more high-density layers and one or more low-density layers having a lower density than a density of the high-density layer so that the low-density layer and the high-density layer are alternately layered so as to be in contact with each other, andthe one or more high-density layers and the one or more low-density layers configuring the protecting film have the same constituent element as each other.2. The display apparatus according to claim 1 ,wherein each of the one or more high-density layers and the one or more low-density layers configuring the protecting film is made of a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, a titanium oxide layer, a zirconium oxide layer, an aluminum oxide layer, an aluminum oxynitride layer or an aluminum nitride layer, ...

FOLDABLE DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

A foldable display apparatus, a method of manufacturing the same, and a controlling method of the same are disclosed. The foldable display apparatus includes a substrate including a metal thin film and an insulating layer provided on the metal thin film, an organic light-emitting unit formed on the substrate and emitting light in an direction away from the substrate, and a thin film encapsulating layer for encapsulating the organic light-emitting unit. The foldable display apparatus may be folded in a direction such that the metal thin film is exposed. 120-. (canceled)21. A display apparatus comprising:an insulating layer;a metal film on a first surface of the insulating layer;an organic light-emitting unit on a second surface of the insulating layer, the second surface opposing the first surface; andan encapsulating layer on the organic light-emitting unit.22. The display apparatus of claim 21 , wherein the metal film comprises stainless steel.23. The display apparatus of claim 21 , wherein a thickness of the metal film is in a range of about 5 micrometers to about 30 micrometers.24. The display apparatus of claim 21 , wherein the metal film comprises a polished surface.25. The display apparatus of claim 21 , wherein the encapsulating layer comprises at least one inorganic layer.26. The display apparatus of claim 21 , wherein the encapsulating layer comprises at least one organic layer and at least one inorganic layer.27. The display apparatus of claim 26 , wherein the at least one organic layer and the at least one inorganic layer are alternately stacked.28. The display apparatus of claim 21 , further comprising:a polarizing member on the encapsulating layer.29. The apparatus of claim 21 , further comprising:a passivation member on the encapsulating layer.30. The display apparatus of claim 21 , further comprising:a passivation layer between the substrate and the organic light-emitting layer.31. The display apparatus of claim 21 , wherein the insulating layer ...

ORGANIC RARE EARTH SOLID MICELLE, PREPARATION METHOD THEREFOR, AND METHOD FOR INCREASING PHOTOELECTRIC CONVERSION EFFICIENCY OF SOLAR BATTERY

Provided are an organic rare-earth solid micelle, a preparation method therefor, and a method for increasing the photoelectric conversion efficiency of a solar battery. A small organic conjugated ligand is taken as a first ligand, an amphiphilic diblock polymer is taken as a second ligand, and the first ligand and the second ligand are mixed and doped with a rare-earth chloride solution, and self-assembled to form an organic rare-earth solid micelle, whereby the fluorescence emission intensity and the fluorescence efficiency of the rare-earth element are improved. Next, the prepared organic rare-earth solid micelle is spin coated on an ITO layer of a solar battery, to prepare a solar battery with the organic rare-earth solid micelle. Therefore the sunlight absorption of a cell is increased, and the photoelectric conversion efficiency is improved. The preparation process is simple, low in cost, high in photoelectric conversion efficiency, and environmentally friendly. 1. A method for preparing an organic rare-earth solid micelle , comprising: taking a small organic conjugated ligand as a first ligand and an amphiphilic diblock polymer as a second ligand , mixing and doping the first ligand and the second ligand with a rare-earth chloride solution , and self-assembling to form an organic rare-earth solid micelle;wherein the amphiphilic diblock polymer is polymethyl methacrylate-b-polyacrylic acid (PMMA-b-PAA),the molar ratio of the small organic conjugated ligand:rare-earth chloride:amphiphilic diblock polymer is 3:1:1,wherein the small organic conjugated ligand:rare-earth chloride:amphiphilic diblock polymer are subjected to complexation reaction for 5-10 hrs in an oil bath at 50-70° C., to obtain a solution of an organic rare-earth solid micelle that is a complex having a size of 10-20 nm.2. (canceled)3. The preparation method according to claim 1 , wherein the polymethyl methacrylate-b-polyacrylic acid (PMMA-b-PAA) useful as the amphiphilic diblock polymer is ...

FUNCTIONAL PANEL, LIGHT-EMITTING PANEL, DISPLAY PANEL, AND SENSOR PANEL

A functional panel is provided. The functional panel includes a first substrate, a second substrate, a bonding layer, a functional element, a protective layer, and a terminal. The bonding layer is positioned between the first and second substrates. The functional element is surrounded by the first substrate, the second substrate, and the bonding layer. The terminal is electrically connected to the functional element and provided not to overlap with one of the first and second substrates. The protective layer is provided to be in contact with side surfaces of the first and second substrates and an exposed surface of the bonding layer. A surface of the terminal is partly exposed without being covered with the protective layer. The surface of the terminal partly includes a material having a lower ionization tendency than hydrogen. 1. A functional panel comprising:a first substrate;a bonding layer;a functional element;a protective layer; anda terminal,wherein the bonding layer is positioned over the first substrate,wherein the functional element is surrounded by the first substrate and the bonding layer,wherein the terminal is electrically connected to the functional element,wherein the protective layer is provided to be in contact with a side surface of the first substrate and an exposed surface of the bonding layer, andwherein a part of a surface of the terminal is exposed without being covered with the protective layer.2. The functional panel according to claim 1 , wherein the part of the surface of the terminal includes a material having a lower ionization tendency than hydrogen.3. The functional panel according to claim 2 , wherein the material is palladium claim 2 , iridium claim 2 , gold claim 2 , or platinum.4. The functional panel according to claim 1 , wherein the protective layer includes at least one of aluminum oxide claim 1 , hafnium oxide claim 1 , zirconium oxide claim 1 , titanium oxide claim 1 , zinc oxide claim 1 , indium oxide claim 1 , tin oxide ...

Plastic substrate and display device comprising the same

A plastic substrate includes: a transparent plastic support member; a first inorganic layer on a surface of the plastic support member; and a first organic-inorganic hybrid layer on the first inorganic layer. A display device includes a display panel and a window on the display panel, the window including the plastic substrate.

IMAGE PICKUP DEVICE AND ELECTRONIC APPARATUS

An image pickup device includes: a first electrode film; an organic photoelectric conversion film; a second electrode film; and a metal wiring film electrically connected to the second electrode film, the first electrode film, the organic photoelectric conversion film, and the second electrode film all provided on a substrate in this order, and the metal wiring film coating an entire side of the organic photoelectric conversion film. 2. The image pickup device according to claim 1 , wherein the metal wiring film is made of W claim 1 , Al claim 1 , Ti claim 1 , Mo claim 1 , Ta claim 1 , Cu claim 1 , an alloy containing one or more thereof claim 1 , or a material containing one or more thereof and Si.3. The image pickup device according to claim 1 , wherein the film is a silicon nitride film claim 1 , a silicon nitrogen oxide film claim 1 , an aluminum oxide film claim 1 , or a stacked film containing two or more thereof.4. The image pickup device according to claim 1 , wherein the film includes a first film and a second film claim 1 , the first film coating an upper surface of the second electrode film claim 1 , and the second film coating the organic photoelectric conversion film and the first film.5. The image pickup device according to claim 1 , wherein the film has one or more openings positioned opposite the second electrode film claim 1 , and the metal wiring film makes contact with the second electrode film via the one or more openings.6. The image pickup device according to claim 1 , wherein the plurality of first electrode films correspond to a plurality of pixel electrodes provided in respective pixels claim 1 , and the metal wiring film coats an entire side of the film.7. An electronic apparatus comprising: a plurality of first electrode films formed on a substrate, a continuous organic photoelectric conversion film configured to convert light into electrical charge, wherein the organic photoelectric conversion film is substantially parallel to the ...

ORGANIC LIGHT EMITTING DIODE, MANUFACTURING METHOD THEREOF, AND ORGANIC LIGHT EMITTING DISPLAY DEVICE HAVING ORGANIC LIGHT EMITTING DIODE

An organic light emitting diode, a method for manufacturing an organic light emitting diode, and an organic light emitting diode display, the OLED including a substrate; a first electrode on the substrate, the first electrode including a sequentially stacked conductive layer and transparent protective layer; a hole transfer layer on a surface of the transparent protective layer; an organic emitting layer on the hole transfer layer, the organic emitting layer emitting light having a specific color; a common layer on the organic emitting layer; and a second electrode on the common layer. 1. An organic light emitting diode , comprising:a substrate;a first electrode on the substrate, the first electrode including a sequentially stacked conductive layer and transparent protective layer;a hole transfer layer on a surface of the transparent protective layer;an organic emitting layer on the hole transfer layer, the organic emitting layer emitting light having a specific color;a common layer on the organic emitting layer; anda second electrode on the common layer.2. The organic light emitting diode as claimed in claim 1 , wherein the transparent protective layer includes an oxide having a work function of 5.6 eV or greater.3. The organic light emitting diode as claimed in claim 1 , wherein the transparent protective layer includes a zinc oxide claim 1 , a tin oxide claim 1 , an indium oxide claim 1 , an indium zinc oxide claim 1 , an indium tin oxide claim 1 , an indium gallium zinc oxide claim 1 , an indium zinc tin oxide claim 1 , or an indium gallium zinc tin oxide.4. The organic light emitting diode as claimed in claim 1 , wherein the transparent protective layer has a thickness of 50 Å to 1 claim 1 ,000 Å.5. The organic light emitting diode as claimed in claim 1 , wherein the transparent protective layer has a thickness that is selected according to a wavelength of light emitted from the organic emitting layer.6. The organic light emitting diode as claimed in claim 1 , ...

LAMINATION TRANSFER FILMS INCLUDING ORIENTED DIMENSIONALLY ANISOTROPIC INORGANIC NANOMATERIALS

A transfer film is provided which includes a sacrificial template layer having a first surface and a second surface opposite the first surface, wherein the second surface comprises a non-planar structured surface and a thermally stable backfill layer applied to the second surface of the sacrificial template layer, wherein the backfill layer has a structured surface corresponding with and applied to the non-planar structured surface of the sacrificial template layer. The sacrificial template layer comprises oriented dimensionally anisotropic inorganic nanomaterials and is capable of being removed from the backfill layer while leaving the structured surface of the backfill layer and the oriented dimensionally anisotropic inorganic nanomaterials substantially intact. 1a sacrificial template layer having a first surface and having a second surface opposite the first surface, wherein the second surface comprises a non-planar structured surface; anda thermally stable backfill layer applied to the second surface of the sacrificial template layer, wherein the backfill layer has a structured surface corresponding with and applied to the non-planar structured surface of the sacrificial template layer,wherein the sacrificial template layer comprises oriented dimensionally anisotropic inorganic nanomaterials and is capable of being removed from the backfill layer while leaving the structured surface of the backfill layer and the oriented dimensionally anisotropic inorganic nanomaterials substantially intact.. A lamination transfer film for use in transferring a structured layer, comprising: Nanostructures and microstructures, possibly including nanoparticles, on glass substrates are used for a variety of applications in display, lighting, architecture and photovoltaic devices. In display devices the structures can be used for enhanced light extraction or distribution. In lighting devices, the structures can be used for enhanced light extraction, distribution, and decorative ...

ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS

An electro-optical device includes a reflective layer, a light emitting element including a light emitting layer formed between an anode and a cathode, and a driving transistor configured to control a current flowing through the light emitting element. In the same layer as the reflective layer, a relay electrode included in a current path from the driving transistor to the anode is formed with a gap between the relay electrode and the reflective layer. A contact electrode electrically connecting the relay electrode and the anode is formed as a light shielding layer that blocks light entering the gap. 1. An electro-optical device comprising:a substrate;a first insulating film provided above the substrate;a reflective layer provided on the first insulating film;a second insulating film provided above the reflective layer, the second insulating film having a first contact hole;a contact electrode electrically connected to a transistor through the first contact hole, the contact electrode being provided on the second insulating film;a first optical adjustment layer provided on the contact electrode and the second insulating film;a second optical adjustment layer provided on the first optical adjustment layer;an anode provided on the contact electrode and the second optical adjustment layer;an organic functional layer provided on the anode, the organic functional layer including a light emitting layer;a cathode provided on the organic functional layer,wherein the first optical adjustment layer and the second optical adjustment layer have a second contact hole,the anode electrically contacts to the contact electrode through the second contact hole.2. The electro-optical device according to claim 1 ,wherein the contact electrode is made of titanium nitride.3. The electro-optical device according to claim 1 ,wherein the second insulating film is made of silicon nitride.4. The electro-optical device according to claim 3 ,wherein the first optical adjustment layer is made of ...

MASK-STACK-SHIFT METHOD TO FABRICATE ORGANIC SOLAR ARRAY BY SPRAY

An all-spray fabrication method for large scale inverted organic solar array is provided. Zinc oxide sol gel solutions and revised layers shorten the fabrication process from 2 days to 5 hours and concurrently improve transparency and visual effect of solar windows, and improve power conversion efficiency over 2× compared to previous devices, due to enhanced device characteristics like increased shunt resistance and fill factor. The method also eliminates human factors such as manual erasing of active layer to make series connections by providing a complete solution processable manufacturing process. The semi-transparency of the solar module allows for applications on windows and windshields. The inventive modules are more efficient than silicon solar cells in artificial light environments, significantly expanding their use in indoor applications. Additionally, these modules can be integrated into soft fabrics such as tents, military back-packs or combat uniforms, providing a highly portable renewable power supply for deployed military forces. 1. A method of manufacturing an organic solar photovoltaic cell; comprising the steps:obtaining an indium oxide-patterned substrate;forming a sol-gel zinc oxide precursor solution;spraying the sol-gel zinc oxide precursor solution onto the patterned indium oxide substrate to form a zinc oxide layer;annealing the zinc oxide layer;spraying an active layer comprising a bulk heterojunction composition on the zinc oxide layer;spraying an anodic layer comprising poly (3,4) ethylenedioxythiophene:poly-styrenesulfonate mixed with 5 vol. % of dimethylsulfoxide on the active layer to form a solar photovoltaic cell array;placing the solar photovoltaic cell into high vacuum for at least 1 hour;annealing the solar photovoltaic cell; andapplying an electrodic material to the solar photovoltaic cell array.2. The method of claim 1 , wherein the indium oxide is patterned by attaching a mask to the indium oxide layer;applying photoresist; ...

SUBSTRATE FOR DEVICE HAVING AN ORGANIC LIGHT-EMITTING DIODE

A diffusing substrate for a device having an organic light-emitting diode including a sheet of glass coated on one of the surfaces thereof with a layer including a vitreous material, such that the vitreous material has a chemical composition including the following components, which vary within the weight limits defined below: 2. The scattering substrate as claimed in claim 1 , wherein the weight content of BiOis included in a range of from 65% to 80%.3. The scattering substrate as claimed in claim 1 , wherein the weight content of ZnO is at most 8%.4. The scattering substrate as claimed in claim 1 , wherein the weight content of SiOis included in a range of from 7% to 12%.5. The scattering substrate as claimed in claim 1 , wherein the sum of the weight contents of MgO and ZnO is included in a range of from 2% to 9%.6. The scattering substrate as claimed in claim 1 , wherein the sum of the weight contents of CaO and MgO is included in a range of from 0.5% to 4%.7. The scattering substrate as claimed in claim 1 , wherein the chemical composition of the vitreous material comprises the oxides TiOand/or SnO.8. The scattering substrate as claimed in claim 7 , wherein the TiOcontent is at least 0.5% or 1% and at most 5%.9. The scattering substrate as claimed in claim 7 , wherein the SnOcontent is at least 0.2% or 0.5% and at most 5%.10. The scattering substrate as claimed in claim 1 , wherein the layer comprising a vitreous material also comprises scattering elements chosen from particles and cavities.11. The substrate as claimed in claim 10 , wherein the particles are chosen from aluminum particles claim 10 , zirconia particles claim 10 , silica particles claim 10 , titanium dioxide particles claim 10 , calcium carbonate particles and barium sulfate particles.12. The substrate as claimed in claim 1 , wherein the layer comprising a vitreous material consists of said vitreous material claim 1 , and wherein the sheet of glass scatters light or that a scattering layer is ...

ORGANIC LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

Provided are an organic light emitting display device and a manufacturing method thereof. In the organic light emitting display device, after an auxiliary electrode having a multilayer structure including different kinds of metals different in etching speed is formed, a void is formed within the auxiliary electrode upon formation of an anode. The resulting structure is created by a simplified process, with contact reliability between a cathode and the auxiliary electrode being enhanced, while resistance of the cathode is reduced. 1. An organic light emitting display device comprising:a first electrode disposed in each of a plurality of subpixels of a substrate;an auxiliary electrode spaced apart from the first electrode and having a void formed by at least two metal layers having different etching speed; anda second electrode in contact with the auxiliary electrode directly through the void.2. The organic light emitting display device of claim 1 , wherein claim 1 , in the auxiliary electrode claim 1 , an etching speed of a metal in an upper layer is lower than that of a metal in a lower layer.3. The organic light emitting display device of claim 2 , wherein the upper layer includes at least one of ITO claim 2 , Ag claim 2 , Ag alloy claim 2 , or MoTi.4. The organic light emitting display device of claim 2 , wherein the lower layer includes Cu.5. The organic light emitting display device of claim 2 , wherein at least one end portion of the upper layer protrudes claim 2 , relative to that of the lower layer to form the void.6. The organic light emitting display device of claim 5 , wherein the second electrode is in contact with the end portion of the lower layer.7. The organic light emitting display device of claim 6 , wherein the second electrode is in contact with a rear surface of a protrusion of the upper layer.8. The organic light emitting display device of claim 5 , wherein the auxiliary electrode further includes a metal layer disposed in the lowermost layer ...

TRANSPARENT ELECTRODE AND ELECTRONIC DEVICE

Provided is a transparent electrode having sufficient electrical conductivity and light transmissibility, as well as an electronic device and an organic electroluminescence element whose performance is improved by using such a transparent electrode. A transparent electrode () has an electrode layer () composed of silver, wherein the film-thickness of the electrode layer () is 12 nm or less at which sheet resistance is measurable, and wherein the circumferential length of apertures (a) obtained by processing a scanning electron microscope image of a surface region (S) with an area of 500 nm×500 nm of the electrode layer () is, in sum total, 3000 nm or less. 1. A transparent electrode comprising:an electrode layer composed of silver, wherein film-thickness of the electrode layer is 12 nm or less at which sheet resistance of the electrode layer is measurable, and wherein circumferential length of aperture(s) obtained by performing image processing on a scanning electron microscope image of a surface region with an area of 500 nm×500 nm of the electrode layer is, in sum total, 3000 nm or less.2. The transparent electrode according to claim 1 , wherein the circumferential length of the aperture(s) is claim 1 , in sum total claim 1 , 1000 nm or less.3. An electronic device comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a transparent electrode according to .'}4. The electronic device according to claim 3 , wherein the electronic device is an organic electroluminescence element. The present invention relates to a transparent electrode and an electronic device, and more particularly, to a transparent electrode having electrical conductivity and light transmissibility, and an electronic device using such a transparent electrode.An organic electroluminescence element (i.e., so-called organic EL element) using electroluminescence (referred to as EL hereinafter) of an organic material is a thin-film type completely-solid element capable of emitting light at a low ...

ORGANIC ELECTROLUMINESCENT DEVICE PACKAGING STRUCTURE

The present invention provides an organic electroluminescent device packaging structure, comprising a first substrate, a second substrate and an organic electroluminescent device, the organic electroluminescent device being arranged on the first substrate, and the second substrate and the first substrate being spaced apart to arrange the organic electroluminescent device in a sealed space between the first substrate and the second substrate, wherein the organic electroluminescent device packaging structure further comprises a first barrier layer and filling oil filled in the sealed space, and the first barrier layer covers the outer surface of the organic electroluminescent device. 114-. (canceled)15. An organic electroluminescent device packaging structure , comprising a first substrate , a second substrate and an organic electroluminescent device , the organic electroluminescent device being arranged on the first substrate , and the second substrate and the first substrate being spaced apart to arrange the organic electroluminescent device in a sealed space between the first substrate and the second substrate , wherein the organic electroluminescent device packaging structure further comprises a first barrier layer and filling oil filled in the sealed space , and the first barrier layer covers the outer surface of the organic electroluminescent device.16. The organic electroluminescent device packaging structure according to claim 15 , wherein the filling oil is one or more selected from a group consisting of silicone oil claim 15 , phenyl trisilane claim 15 , polydiphenylsiloxane claim 15 , polydimethylsiloxane claim 15 , paraffin oil claim 15 , mineral oil claim 15 , almond oil claim 15 , corn oil claim 15 , cottonseed oil claim 15 , perfluoropolyether oil claim 15 , linseed oil claim 15 , cinnamon oil and coconut oil.17. The organic electroluminescent device packaging structure according to claim 15 , wherein the material forming the first barrier layer is any ...

BARRIER FILM, ORGANIC EL DEVICE, FLEXIBLE SUBSTRATE, AND METHOD FOR MANUFACTURING BARRIER FILM

A barrier film that contains primarily silicon nitride has a total hydrogen concentration of 3×10atoms/cmor higher and a silicon-bonded hydrogen concentration proportion of 40% or higher, the total hydrogen concentration indicating a total of a concentration of hydrogen bonded to silicon and a concentration of hydrogen bonded to nitrogen, and the silicon-bonded hydrogen concentration proportion indicating a proportion of the concentration of hydrogen bonded to silicon to the total hydrogen concentration. 115-. (canceled)16. An organic EL device comprising:a first barrier film that contains primarily silicon nitride;a second barrier film that contains primarily silicon nitride;an organic EL element that is disposed between the first barrier film and the second barrier film;a first flexible substrate that is disposed opposite the organic EL element with the first barrier film interposed therebetween;a second flexible substrate that is disposed opposite the organic EL element with the second barrier film interposed therebetween; anda third barrier film that is disposed between the second barrier film and the organic EL element, and contains primarily silicon nitride, wherein{'sup': 22', '3, 'at least one of the first barrier film and the second barrier film has a total hydrogen concentration of 3×10atoms/cmor higher and a silicon-bonded hydrogen concentration proportion of 55% or higher, the total hydrogen concentration indicating a total of a concentration of hydrogen bonded to silicon and a concentration of hydrogen bonded to nitrogen, and the silicon-bonded hydrogen concentration proportion indicating a proportion of the concentration of hydrogen bonded to silicon to the total hydrogen concentration, and'}the first barrier film and the second barrier film each have a higher silicon-bonded hydrogen concentration proportion than the third barrier film has.17. The organic EL device of claim 16 , whereinthe whole area of the at least one barrier film has the silicon- ...

HETEROGENEOUS NANOSTRUCTURES FOR HIERARCHAL ASSEMBLY

A method of making a carbon nanotube structure includes depositing a first oxide layer on a substrate and a second oxide layer on the first oxide layer; etching a trench through the second oxide layer; removing end portions of the first oxide layer and portions of the substrate beneath the end portions to form cavities in the substrate; depositing a metal in the cavities to form first body metal pads; disposing a carbon nanotube on the first body metal pads and the first oxide layer such that ends of the carbon nanotube contact each of the first body metal layers; depositing a metal to form second body metal pads on the first body metal pads at the ends of the carbon nanotube; and etching to release the carbon nanotube, first body metal pads, and second body metal pads from the substrate, first oxide layer, and second oxide layer. 1. A carbon nanotube nanostructure , comprising:a carbon nanotube having a first end and a second end;a first body metal pad arranged on the first end of the carbon nanotube, the first body metal pad having a first face metal layer arranged on a first surface of the first body metal pad, and a second face metal layer arranged on a second opposing surface of the first body metal pad;a second body metal pad arranged on the second end of the carbon nanotube, the second body metal pad having a first face metal layer arranged on a first surface of the second body metal pad, and a second face metal layer arranged on a second opposing surface of the second body metal pad; anda chemical compound comprising a functional group bonded to the first face metal layer of the first body metal pad.2. The carbon nanotube nanostructure of claim 1 , wherein the first body metal pad comprises a first metal layer and a second metal layer disposed on the first metal layer.3. The carbon nanotube nanostructure of claim 2 , wherein the first metal layer and the second metal layer are different.4. The carbon nanotube nanostructure of claim 2 , wherein the second ...

ENCAPSULATED WHITE OLEDS HAVING ENHANCED OPTICAL OUTPUT

Methods of making an integrated barrier stack and optical enhancement layer for protecting and improving the light out coupling of encapsulated white OLEDs are described. The method includes optimizing the thickness of various layers including one or more of the plasma protective layer, the initial organic layer, the initial inorganic barrier layer, and the inorganic barrier layer and polymeric decoupling layer for the barrier stack. The thickness is optimized for at least one of total efficiency, or intentional color point shift so that the encapsulated OLED has enhanced light outcoupling compared to the bare OLED. 1. An encapsulated white OLED having an integrated barrier and optical enhancement stack for protecting and improving the light out coupling of the encapsulated white OLED comprising;a co-doped white OLED having a transparent electrode;a plasma protective layer having a refractive index in a range of about 1.1 to about 1.9 and a thickness within a range of about 20 nm to about 50 nm, the plasma protective layer adjacent to the transparent electrode of the white OLED;an initial inorganic barrier layer having a refractive index in a range of about 1.55 to about 2 and a thickness within a range of about 40 nm to about 240 nm, the initial inorganic barrier layer adjacent to the transparent electrode in the white OLED; anda barrier stack comprising at least a pair of inorganic barrier layers and a polymeric decoupling layer between the inorganic barrier layers, the inorganic barrier layer having a refractive index in a range of about 1.55 to about 2 and a thickness within a range of about 20 nm to about 80 nm, and the polymeric decoupling layer having a refractive index in a range of about 1.4 to about 1.65 and a thickness within in a range of about 0.2 μm to about 4 μm, the barrier stack adjacent to the initial inorganic barrier layer, wherein the thickness of at least one of the plasma protective layer, initial inorganic barrier layer, the inorganic barrier ...

Organic Light-Emitting Display Panel and Device

An organic light-emitting display panel and an organic light-emitting display device are disclosed, wherein the organic light-emitting display panel includes: a substrate, a cathode, a first auxiliary functional structure, a light-emitting structure and an anode that are successively laminated; wherein, the material of both the anode and the cathode is silver or a silver-containing metallic material, and a micro-cavity structure is formed between the cathode and the anode; the first auxiliary functional structure includes at least one of an electron injection layer, an electron transport layer and a hole blocking layer, and the first auxiliary functional structure is multiplexed as a micro-cavity length adjusting structure. 1. An organic light-emitting display panel , comprising:a substrate, a cathode, a first auxiliary functional structure, a light-emitting structure and an anode, wherein the substrate, the cathode, the first auxiliary functional structure, the light-emitting structure and the anode are successively laminated;wherein the anode and the cathode are both made of silver or a silver-containing metallic material, and wherein a micro-cavity structure is formed between the cathode and the anode; andwherein the first auxiliary functional structure comprises at least one of an electron injection layer, an electron transport layer, and a hole blocking layer; andwherein the first auxiliary functional structure is multiplexed as a micro-cavity length adjusting structure.2. The organic light-emitting display panel as claimed in claim 1 , whereina thickness of the micro-cavity length adjusting structure is greater than 600 Å.3. The organic light-emitting display panel as claimed in claim 2 , whereinthe electron transport layer comprises an alkali metal, an alkaline earth metal and a rare earth metal.4. The organic light-emitting display panel as claimed in claim 3 , whereinthe electron transport layer further comprises lithium, cesium and ytterbium.5. The organic ...

DISPLAY DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE

A display device according to an embodiment of the present invention includes: an underlying structure layer; a first lower electrode that is arranged on the underlying structure layer; multiple lower electrodes including a second lower electrode adjacent to the first lower electrode; an organic layer that is arranged on the multiple lower electrodes; an upper electrode that is arranged on the organic layer; a first through hole that is arranged between the first lower electrode and the second lower electrode and includes a first inorganic layer at least in a part of an inner face; and a second inorganic layer that is arranged on the upper electrode and is in contact with the first inorganic layer in the inner face of the first through hole. 1. A display device comprising:an underlying structure layer;a first lower electrode that is arranged on the underlying structure layer;multiple lower electrodes including a second lower electrode adjacent to the first lower electrode;an organic layer that is arranged on the multiple lower electrodes;an upper electrode that is arranged on the organic layer;a first through hole that is arranged between the first lower electrode and the second lower electrode and includes a first inorganic layer at least in a part of an inner face; anda second inorganic layer that is arranged on the upper electrode and is in contact with the first inorganic layer in the inner face of the first through hole.2. The display device according to claim 1 , whereinat least a part of the first inorganic layer is arranged closer to the underlying structure layer than a position between the upper electrode and the organic layer.3. The display device according to claim 1 , whereinat least a part of the first inorganic layer is arranged closer to the underlying structure layer than a position between two layers included in the organic layer.4. The display device according to claim 1 , whereinat least a part of the first inorganic layer is arranged closer to ...

Array substrate, display panel and display apparatus

An array substrate, a display panel, and a display apparatus. The array substrate includes a base substrate; a first electrode layer formed on the base substrate; a light emitting layer formed on the first electrode layer and including a non-transparent first light emitting region, a second light emitting region, and a transparent third light emitting region; and a second electrode layer formed on the light emitting layer. The first light emitting region includes first light emitting structures. The second light emitting region includes second light emitting structures. The third light emitting region includes third light emitting structures. The second light emitting region is located between the first light emitting region and the third light emitting region. A distribution density of first light emitting structures, a distribution density of second light emitting structures, and a distribution density of third light emitting structures are gradually changed in sequence.

Photoelectric conversion element and photoelectric conversion element module

Provided is a photoelectric conversion element including a first electrode, an electron-transporting layer including a photosensitizing compound, a hole-transporting layer, and a second electrode, wherein the hole-transporting layer includes a p-type semiconductor material and a basic compound, ionization potential of the hole-transporting layer is greater than ionization potential of the p-type semiconductor material, and is less than 1.07 times the ionization potential of the p-type semiconductor material, ionization potential of the photosensitizing compound is greater than the ionization potential of the hole-transporting layer, and an acid dissociation constant (pKa) of the basic compound is 6 or greater but 10 or less.

QUANTUM DOT LIGHT-EMITTING DIODE AND PREPARATION METHOD THEREFOR, AND LIGHT-EMITTING MODULE AND DISPLAY APPARATUS

A preparation method of the QD light-emitting diode includes: prepare a QD light-emitting layer on an anode, wherein the QD light-emitting layer is prepared by the QDs and the CuSCN nanoparticles; and prepare a cathode on the QD light-emitting layer, and form the QD light-emitting diode. 1. A preparation method of the QD light-emitting diode , comprising:prepare a QD light-emitting layer on an anode, wherein the QD light-emitting layer is prepared by the QDs and the CuSCN nanoparticles; andprepare a cathode on the QD light-emitting layer, and form the QD light-emitting diode.2. The preparation method of the QD light-emitting diode according to claim 1 , wherein the step of preparing the QD light-emitting layer on the anode includes specifically: depositing a mixture of the QDs and the CuSCN nanoparticles on the anode by a solution method claim 1 , to form a QD light-emitting layer containing the CuSCN nanoparticles.3. The preparation method of the QD light-emitting diode according to claim 1 , wherein the step of preparing the QD light-emitting layer on the anode includes specifically: blending the QDs and the CuSCN nanoparticles claim 1 , before depositing on the anode through evaporation method claim 1 , and forming a QD light-emitting layer containing the CuSCN nanoparticles.4. The preparation method of the QD light-emitting diode according to claim 1 , wherein comprising specifically:prepare a holes injection layer on the anode;prepare a holes transport layer on the holes injection layer;prepare a QD light-emitting layer on the holes transport layer; wherein the QD light-emitting layer is prepared by the QDs and the CuSCN nanoparticles;prepare an electrons transport layer on the QD light-emitting layer, and prepare a cathode on the electrons transport layer before forming a QD light-emitting diode.5. The preparation method of the QD light-emitting diode according to claim 4 , wherein preparing a QD light-emitting layer on the holes transport layer includes ...

Light-Emitting Element, Light-Emitting Device, Display Device, Electronic Device, and Lighting Device

An object is to provide a light-emitting element which uses a plurality of kinds of light-emitting dopants and has high emission efficiency. In one embodiment of the present invention, a light-emitting device, a light-emitting module, a light-emitting display device, an electronic device, and a lighting device each having reduced power consumption by using the above light-emitting element are provided. Attention is paid to Förster mechanism, which is one of mechanisms of intermolecular energy transfer. Efficient energy transfer by Förster mechanism is achieved by making an emission wavelength of a molecule which donates energy overlap with the longest-wavelength-side local maximum peak of a graph obtained by multiplying an absorption spectrum of a molecule which receives energy by a wavelength raised to the fourth power. 1. (canceled)2. A light-emitting device comprising:a first electrode;a first light-emitting layer;a second light-emitting layer; anda second electrode,wherein the first light-emitting layer is between the first electrode and the second light-emitting layer,wherein the second light-emitting layer is between the first light-emitting layer and the second electrode, a first phosphorescent compound;', 'a first host material; and', 'a first organic compound,, 'wherein the first light-emitting layer comprising a second phosphorescent compound; and', 'a second host material,, 'wherein the second light-emitting layer comprisingwherein the first host material and the first organic compound are capable of forming an exciplex therebetween,wherein light emitted from the second phosphorescent compound has a longer wavelength than light emitted from the first phosphorescent compound,{'sup': '4', 'wherein the longest-wavelength-side peak of a function ε(λ)λof the second phosphorescent compound overlaps with a band having a peak of a photoluminescence spectrum F(λ) of the first phosphorescent compound,'}wherein λ denotes a wavelength, andwherein ε(λ) denotes a molar ...

SOLAR CELL AND METHOD FOR PRODUCING SAME

The present invention aims to provide a solar cell having high durability against deterioration due to moisture ingress from the side surfaces. The solar cell of the present invention includes: first and second electrodes and ; a perovskite layer provided between the first and second electrodes and and containing an organic-inorganic perovskite compound (A) represented by the formula RMXwhere R is an organic molecule, M is a metal atom, and X is a halogen atom; and a side-surface-protecting layer provided on a peripheral side of the perovskite layer to coat at least part of a side surface of the perovskite layer , the side-surface-protecting layer containing at least one selected from the group consisting of a metal halide (B1) and an organometal halide (B2) or containing an organohalide (C). 1. A solar cell comprising:first and second electrodes;{'sub': '3', 'a perovskite layer provided between the first and second electrodes and containing an organic-inorganic perovskite compound (A) represented by the formula RMXwhere R is an organic molecule, M is a metal atom, and X is a halogen atom; and'}a side-surface-protecting layer provided on a peripheral side of the perovskite layer to coat at least part of a side surface of the perovskite layer, the side-surface-protecting layer containing at least one selected from the group consisting of a metal halide (B1) and an organometal halide (B2) or containing an organohalide (C).2. The solar cell according to claim 1 ,wherein the side-surface-protecting layer is provided to surround an entire periphery of the perovskite layer.3. The solar cell according to claim 1 ,wherein the organic-inorganic perovskite compound (A) is a reaction product of the at least one selected from the group consisting of the metal halide (B1) and the organometal halide (B2) with the organohalide (C).4. The solar cell according to claim 3 ,wherein the organohalide (C) is an alkyl ammonium halide.5. The solar cell according to claim 1 ,wherein the ...

ELECTROLUMINESCENT DEVICE AND A LIGHT EMITTING SYSTEM

An electroluminescent device including an electrode, the electrode being ionically conductive; an electroluminescence layer positioned adjacent or in contact with the electrode, the electroluminescence layer being electrically coupled to the electrode; the electroluminescence layer receiving electrical energy from the electrode and illuminating in response to received electrical energy, and wherein the electrode and the electroluminescence layer are repairable such that the function of the electrode and the electroluminescence layer is restored after a deformation. 1. An electroluminescent device comprising:an electrode, the electrode being ionically conductivean electroluminescence layer positioned adjacent or in contact with the electrode, the electroluminescence layer being electrically coupled to the electrode,the electroluminescence layer receiving electrical energy from the electrode and illuminating in response to received electrical energy, and;wherein the electrode and the electroluminescence layer are repairable such that the function of the electrode and the electroluminescence layer is restored after a deformation.2. The electroluminescent device in accordance with claim 1 , wherein the electrode and the electroluminescence layer each are repairable such that the function of the electrode and the electroluminescence layer is restored even after being cut.3. The electroluminescent device in accordance with claim 1 , wherein the electroluminescence device comprises a first electrode claim 1 , a second electrode claim 1 , the electroluminescence layer being sandwiched between the first electrode and the second electrode and the electroluminescence layer arranged in electrical communication with the first electrode and the second electrode.4. The electroluminescent device in accordance with claim 1 , wherein the electroluminescence layer comprises a polymer and an electroluminescent material.5. The electroluminescent device in accordance with claim 4 , ...

DOUBLE-SIDED DISPLAY OLED ARRAY SUBSTRATE, ITS MANUFACTURING METHOD, AND DISPLAY DEVICE

The present disclosure provides a double-sided display OLED array substrate, its manufacturing method, and a display device. The double-sided display OLED array substrate includes a first base substrate, a second base substrate, a first OLED and a second OLED arranged between the first base substrate and the second base substrate, and a first TFT and a second TFT sharing an identical gate electrode and arranged between the first OLED and the second OLED, the first TFT being configured to drive the first OLED, and the second TFT being configured to drive the second OLED. According to the present disclosure, it is able to reduce a thickness of the double-sided display OLED array substrate, thereby to reduce the production cost thereof.

ELECTRONIC DEVICES USING ORGANIC SMALL MOLECULE SEMICONDUCTING COMPOUNDS

Small organic molecule semi-conducting chromophores containing a halogen-substituted core structure are disclosed. Such compounds can be used in organic heterojunction devices, such as organic small molecule solar cells and transistors.

ELECTRONIC ELEMENT EMPLOYING HYBRID ELECTRODE HAVING HIGH WORK FUNCTION AND CONDUCTIVITY

An electronic element is provided. The electronic element may include a hybrid electrode having a high work function and conductivity which has a conductivity of at least 1 S/cm and includes: a work function-tuning layer; and a conductivity-tuning layer which is in contact with the first surface of the work function-tuning layer. Accordingly, the electronic element which employs the hybrid electrode having a high work function and conductivity may have excellent light-emitting efficiency and/or photoelectric conversion efficiency even if a hole injection layer for work function adjustment is omitted.

ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

Provided are an organic light emitting display device and a method of manufacturing the organic light emitting display device according to an exemplary embodiment of the present disclosure. The organic light emitting display device includes: a substrate including a display area and a pad area; a pad electrode structure on the substrate in the pad area and including a first pad electrode and a second pad electrode on the first pad electrode; and a protection conductive layer covering a lateral surface of the second pad electrode so as to reduce corrosion of the second pad electrode.

OLED SUBSTRATE AND PRODUCING METHOD THEREOF, PANEL, AND DISPLAY APPARATUS

This disclosure provides an OLED substrate and a producing method thereof, a panel, and a display apparatus, and pertains to the field of OLED products and production. The OLED substrate comprises an OLED device and an encapsulating layer, which are located on a first substrate, wherein the encapsulating layer encapsulates the OLED device, and wherein the OLED substrate further comprises a heat-dissipating layer which is provided above the OLED device. By adding a heat-dissipating layer and by means of the good thermal conductivity of the heat-dissipating layer, the heat generated when OLED devices are lit is rapidly dissipated, so as to prolong the service life of OLED devices, such that the service life of OLED panel and in turn the service life of display apparatus are prolonged. 1. An OLED substrate , comprising an OLED device and an encapsulating layer , which are located on a first substrate , wherein the encapsulating layer encapsulates the OLED device , and wherein the OLED substrate further comprises a heat-dissipating layer which is provided above the OLED device.2. The OLED substrate according to claim 1 , wherein the heat-dissipating layer is provided between the OLED device and the encapsulating layer.3. The OLED substrate according to claim 2 , wherein the heat-dissipating layer is in contact with the OLED device.4. The OLED substrate according to claim 3 , wherein the heat-dissipating layer is an insulator heat-dissipating material or a semiconductor heat-dissipating material.5. The OLED substrate according to claim 2 , wherein the heat-dissipating layer is not in contact with the OLED device.6. The OLED substrate according to claim 5 , wherein the heat-dissipating layer is an insulator heat-dissipating material claim 5 , a semiconductor heat-dissipating material claim 5 , or a metal material.7. The OLED substrate according to claim 1 , wherein the encapsulating layer includes a plurality of layers claim 1 , and the heat-dissipating layer is provided ...

Hybrid Layers For Use In Coatings On Electronic Devices Or Other Articles

A method for protecting an electronic device comprising an organic device body. The method involves the use of a hybrid layer deposited by chemical vapor deposition. The hybrid layer comprises a mixture of a polymeric material and a non-polymeric material, wherein the weight ratio of polymeric to non-polymeric material is in the range of 95:5 to 5:95, and wherein the polymeric material and the non-polymeric material are created from the same source of precursor material. Also disclosed are techniques for impeding the lateral diffusion of environmental contaminants. 190-. (canceled)91. An electronic device comprising:a substrate;a functional organic body disposed over the substrate;a hybrid layer disposed over the functional organic body, wherein the hybrid layer comprises a mixture of polymeric silicon and silicon oxide; andan intervening layer that is disposed between the hybrid layer and the top surface of the functional organic body, wherein the intervening layer serves to adhere the hybrid layer to the top surface of the functional organic body.92. The device of claim 91 , wherein the intervening layer comprises silicon nitride claim 91 , chromium claim 91 , titanium claim 91 , or a nickel-titanium alloy.93. The device of claim 91 , wherein the intervening layer comprises a dielectric material.94. The device of claim 91 , further comprising a barrier coating disposed over the hybrid layer and extending over an edge of the hybrid layer.95. The device of claim 94 , wherein the barrier coating does not cover over at least a portion of the functional organic body.96. The device of claim 95 , wherein the barrier coating is non-transparent.97. The device of claim 94 , further comprising a desiccant material disposed between the barrier coating and the hybrid layer.98. The device of claim 91 , further comprising an edge barrier at one or more areas peripherally adjacent the organic device body.99. The device of claim 98 , wherein the edge barrier comprises a desiccant ...

Organic light-emitting display device and method of manufacturing the same

An organic light-emitting display device includes a substrate, a display unit on the substrate, and a thin film encapsulation unit configured to encapsulate the display unit, and including a corrugated portion including a first layer and a second layer that are sequentially stacked, wherein the first layer includes a material having a lower modulus of elasticity than the second layer, and wherein a corrugated surface is formed at an upper surface of the first layer and a lower surface of the second layer due to a difference in the moduli of elasticity of the first layer and the second layer.

METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS

An organic light emitting display apparatus includes a substrate, a display unit on the substrate, and a thin-film encapsulation layer for sealing the display unit, the thin-film encapsulation layer including a first organic film, a first inorganic film covering the first organic film, and an interlayer disposed at a lower surface of the first organic film, the interlayer defining an area where the first organic film is formed, an area of the interlayer being the same as the area of the first organic film. 114.-. (canceled)15. A method of manufacturing an organic light emitting display apparatus , the method comprising:forming a display unit on a substrate; andforming a thin-film encapsulation layer for sealing the display unit, the forming of the thin-film encapsulation layer including:forming an interlayer on the display unit, the interlayer including at least one of an alkali metal salt and an alkali earth metal salt,forming a first organic film corresponding to the interlayer, andforming a first inorganic film to cover the first organic film, the first organic film being formed on only an area where the interlayer is formed.16. The method as claimed in claim 15 , wherein the interlayer has a thickness of about 50 Å to about 600 Å.17. The method as claimed in claim 15 , wherein the interlayer includes one or more of lithium fluoride claim 15 , calcium fluoride claim 15 , magnesium chloride claim 15 , or sodium chloride.18. The method as claimed in claim 15 , further comprising:forming a second organic film on the first inorganic film; andforming a second inorganic film to cover the second organic film.19. The method as claimed in claim 18 , further comprising forming a second interlayer on the first inorganic film before forming the second organic film claim 18 , wherein the second organic film is formed on only an area where the second interlayer is formed.20. The method as claimed in claim 15 , further comprising forming a third inorganic film to cover the ...

DISPLAY SUBSTRATE AND DISPLAY DEVICE

A display substrate and a display device. The display substrate includes a first display area and a second display area. A light transmittance of the second display area is lower than a light transmittance of the first display area. Among the sub-pixel groups of each pixel unit in the first display area, first electrodes of sub-pixels of sub-pixel groups of the pixel unit are electrically connected to corresponding pixel circuits through first connecting portions, and first electrodes of sub-pixels of the other sub-pixel groups of the pixel unit are electrically connected to corresponding pixel circuits through second connecting portions, the first connecting portions and the second connecting portions are disposed in different layers, and the second connecting portion and a plurality of first electrodes of a plurality of sub-pixels of the sub-pixel groups of the pixel unit are disposed in different layers. 1. A display substrate comprises:a first display area comprising a plurality of pixel units, and each of the plurality of pixel units comprising at least three sub-pixel groups emitting light of at least three different colors;each of the sub-pixel groups comprising at least one sub-pixel, and each sub-pixel comprising a first electrode, a light emitting structure disposed on the first electrode and a second electrode disposed on the light emitting structure; anda second display area being adjacent to the first display area, a light transmittance of the second display area being lower than a light transmittance of the first display area; the second display area being provided with a plurality of pixel circuits for driving the sub-pixel groups;wherein among the sub-pixel groups of each pixel unit in the first display area, at least one first electrode of at least one sub-pixel of at least one sub-pixel group of the pixel unit is electrically connected to at least one corresponding pixel circuit through at least one first connecting portion, and at least one first ...

SILICON DIOXIDE SOLAR CELL

A silicon dioxide solar cell includes first and second substrates having electrical conductivity, the first and second substrates being arranged so that conductive surfaces of the first and second substrates are facing each other, the first substrate being a transparent substrate on a light incident side to which a light is irradiated; a silicon dioxide layer consisting essentially of silicon dioxide particles which is formed on an electrode disposed on the second substrate such that the silicon dioxide layer has a photovoltaic ability absorbing an infrared light; and an electrolyte disposed between said first and second substrate. The space between the silicon dioxide layer and the first substrate on the light incident side is filled with the electrolyte, and the silicon dioxide solar cell is configured to generate electricity from the silicon dioxide particles of the silicon dioxide layer and output the electricity via the electrode. 2. The silicon dioxide solar cell according to claim 1 , wherein the silicon dioxide particles have the particle diameter of 500 nm or less.3. The silicon dioxide solar cell according to claim 1 , wherein the silicon dioxide particles are treated with halogen acid.4. The silicon dioxide solar cell according to claim 3 , wherein the halogen acid is hydrofluoric acid.5. The silicon dioxide solar cell according to claim 3 , wherein the halogen acid is hydrochloric acid.6. The silicon dioxide solar cell according to claim 1 , wherein the silicon dioxide layer consisting essentially of the silicon dioxide particles selected from the group consisting of synthetic quartz particles claim 1 , fused quartz glass particles claim 1 , non-alkali glass particles claim 1 , borosilicate glass particles claim 1 , and soda-lime glass particles7. The silicon dioxide solar cell according to claim 1 , wherein a porous titanium dioxide sintered material is disposed on the first substrate on the light incident side.8. The silicon dioxide solar cell ...

LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD OF LIGHT-EMITTING DEVICE

A light-emitting element includes an anode, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and a cathode, in this order. The electron transport layer includes a particulate metal oxide and a conductive resin that disperses the metal oxide. 1. A light-emitting element comprising:an anode;a hole transport layer;a quantum dot light-emitting layer;an electron transport layer; anda cathode, in this order,wherein the electron transport layer includes a particulate metal oxide and a conductive resin that disperses the metal oxide andthe conductive resin is Poly[(9,9-bis(3′-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)].2. The light-emitting element according to claim 1 ,wherein the conductive resin is light-transmissive.3. (canceled)4. The light-emitting element according to claim 1 ,wherein the metal oxide is zinc oxide, and a volume ratio between the zinc oxide and the conductive resin (zinc oxide/conductive resin) is from 60/40 to 95/5.5. The light-emitting element according to claim 1 ,wherein an electron mobility of the metal oxide is greater than an electron mobility of the conductive resin.6. The light-emitting element according to claim 1 ,wherein a solvent used when mixing the metal oxide and the conductive resin is at least one solvent selected from toluene, chlorobenzene, phenylcyclohexane, ethylene glycol monophenyl ether, isopropyl biphenyl, and 1,1-bis (3,4-dimethylphenyl) ethane.7. The light-emitting element according to claim 1 , further comprising:an electron injection layer provided between the electron transport layer and the cathode.8. The light-emitting element according to claim 7 ,wherein the electron injection layer includes the conductive resin.9. The light-emitting element according to claim 1 ,wherein the quantum dot light-emitting layer includes quantum dot light-emitting layers for each of colors, the quantum dot light-emitting layers respectively emitting red light, green light ...

ASSEMBLY OF NANOPARTICLES, DISPERSION LIQUID, INK, THIN FILM OF NANOPARTICLES, ORGANIC LIGHT EMITTING DIODE, AND METHOD FOR PRODUCING ASSEMBLY OF NANOPARTICLES

An assembly of nanoparticles includes metal oxide, the nanoparticles including zinc (Zn) and silicon (Si). In addition, the nanoparticles have an atomic ratio of Zn/(Zn+Si) in a range of 0.3 to 0.95. Further, the nanoparticles have an equivalent circular particle diameter in a range of 1 nm to 20 nm. 1. An assembly of nanoparticles comprising metal oxide ,wherein the nanoparticles include zinc (Zn) and silicon (Si),the nanoparticles have an atomic ratio of Zn/(Zn+Si) in a range of 0.3 to 0.95, andthe nanoparticles have an equivalent circular particle diameter in a range of 1 nm to 20 nm.2. The assembly of nanoparticles according to claim 1 , further comprising:first nanoparticles including a crystal of zinc oxide (ZnO) in which silicon (Si) is dissolved; andsecond nanoparticles in an amorphous state.3. The assembly of nanoparticles according to claim 2 , wherein the second nanoparticles include silicon dioxide.4. The assembly of nanoparticles according to claim 2 , wherein the second nanoparticles occupy 10% or more by volume with respect to the nanoparticles.5. A dispersion liquid of nanoparticles in which the assembly of nanoparticles of is dispersed.6. An ink comprising:a solvent;a thickener; and{'claim-ref': {'@idref': 'CLM-00003', 'claim 3'}, 'the assembly of nanoparticles of .'}7. A thin film comprising the assembly of nanoparticles of .8. The thin film according to claim 7 , wherein the thin film has a work function of 3.5 eV or less claim 7 , and a conductivity of 10Scmor more.9. An organic light emitting diode (OLED) comprising:a first electrode;an organic light emitting layer; andan additional layer provided between the first electrode and the organic light emitting layer,{'claim-ref': {'@idref': 'CLM-00007', 'claim 7'}, 'wherein the additional layer is constituted by the thin film according to .'}10. A method for producing an assembly of nanoparticles including metal oxide claim 7 , the production method comprising:preparing a source material including at ...

DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME

A display device includes an anode electrode a cathode electrode a light-emitting layer, and an electron transport layer. The light-emitting layer is provided between the anode electrode and the cathode electrode. The electron transport layer is provided between the cathode electrode and the light-emitting layer. The electron transport layer includes a nanoparticle of a metal oxide, and an organic modifier configured to cover a surface of the nanoparticle and having electron donating characteristics. 1. A display device , comprising:an anode electrode;a cathode electrode;a light-emitting layer provided between the anode electrode and the cathode electrode; andan electron transport layer provided between the cathode electrode and the light-emitting layer,wherein the electron transport layer includes a nanoparticle of a metal oxide, and an organic modifier configured to cover a surface of the nanoparticle and having electron donating characteristics.2. The display device according to claim 1 ,wherein the organic modifier is a compound of at least one type selected from the group consisting of 1,3-bis(carbazole-9-yl)benzene, 4,4′,4″-tri(carbazole-9-yl)triphenylamine, and 4,4′-bis(carbazole-9-yl)biphenyl.3. The display device according to claim 1 ,wherein a volume ratio of the organic modifier to the nanoparticle falls within a range of 1/99 to 30/70.4. The display device according to claim 1 , further comprising:a red subpixel; a green subpixel; and a blue subpixel,wherein the electron transport layer includes a first electron transport layer formed in the red subpixel, a second electron transport layer formed in the green subpixel, and a third electron transport layer formed in the blue subpixel, anda volume ratio of the organic modifier to the nanoparticle is greater in order of the third electron transport layer, the second electron transport layer, and the first electron transport layer.5. The display device according to claim 4 ,wherein a volume ratio of the ...

LIGHT EMITTING DIODE, METHOD OF MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE

The present disclosure provides a light-emitting diode, including a first electrode, a light-emitting functional layer and a second electrode which are stacked, the first electrode is a transparent electrode, the second electrode includes a metal electrode layer and a semiconductor auxiliary layer, the metal electrode layer is attached to the light-emitting functional layer, the semiconductor auxiliary layer is located on a surface of the metal electrode layer away from the light-emitting functional layer. The metal electrode layer is made of a magnesium-silver alloy, a thickness of the metal electrode layer is between 3 nm and 5 nm, and the semiconductor auxiliary layer is made of IZO, a thickness of the semiconductor auxiliary layer is between 100 nm and 130 nm. The present disclosure further provides a light emitting device and a method of manufacturing a light emitting diode. The light-emitting diode has high color rendering index and low power consumption. 1. A light emitting diode , comprising a first electrode , a light-emitting functional layer and a second electrode which are laminated , the first electrode is a transparent electrode , whereinthe second electrode comprises a metal electrode layer and a semiconductor auxiliary layer, the metal electrode layer is attached to the light-emitting functional layer, the semiconductor auxiliary layer is located on a surface, away from the light-emitting functional layer, of the metal electrode layer,the metal electrode layer is made of a magnesium-silver alloy, a thickness of the metal electrode layer is between 3 nm and 5 nm,the semiconductor auxiliary layer is made of indium zinc oxide, and a thickness of the semiconductor auxiliary layer is between 100 nm and 130 nm.2. The light-emitting diode of claim 1 , wherein in the magnesium silver alloy claim 1 , a mass percentage of magnesium is between 70% and 90%.3. The light emitting diode of claim 1 , wherein the second electrode has a light transmittance ranging ...

DISPLAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE

A display substrate including a pixel, and further includes: a substrate; a first-auxiliary-electrode on the substrate; a second-auxiliary-electrode disposed on and electrically connected to the first-auxiliary-electrode, the second auxiliary-electrode comprising a first-conductive-layer on the first-auxiliary-electrode, a second-conductive-layer on the first-conductive-layer, and a barrier layer on the second-conductive-layer, an orthographic projection of the second-conductive-layer on the substrate located within an orthographic projection of the first-conductive-layer on the substrate, and the orthographic projection of the second-conductive-layer located within an orthographic projection of the barrier layer on the substrate; and a first electrode electrically connected to the second-auxiliary-electrode and comprising a first-conductive-portion and a second-conductive-portion connected to each other, the first-conductive-portion disposed on the first-conductive-layer and extending along a surface of the first-conductive-layer, the second-conductive-portion contacting with and extending along a side surface of the second-conductive-layer, wherein the first electrode is a cathode of the pixel. 1. A display substrate comprising a pixel , wherein the display substrate further comprises:a substrate;a first auxiliary electrode, disposed on the substrate;a second auxiliary electrode, disposed on the first auxiliary electrode and electrically connected to the first auxiliary electrode, the second auxiliary electrode comprising a first conductive layer, a second conductive layer, and a barrier layer, wherein the first conductive layer is disposed on a side of the first auxiliary electrode away from the substrate, the second conductive layer is disposed on a side of the first conductive layer away from the substrate, and the barrier layer is disposed on a side of the second conductive layer away from the substrate, an orthographic projection of the second conductive ...

Electronic device

An electronic device is provided. The electronic device includes a substrate, an inorganic layer, and an organic layer. The substrate has a recess with a side portion. The inorganic layer is disposed on the substrate. The organic layer is disposed on the inorganic layer, wherein the organic layer and the inorganic layer have an interface, the interface includes a first part corresponding to the side portion of the recess, and the first part has a curved profile.

DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

A display device according to an embodiment may include a base layer including a first surface and a second surface, a pixel circuit layer including a first line on the first surface, a display element layer on the pixel circuit layer and including a display element, a thin film encapsulation layer on the display element layer, a first protective layer on the thin film encapsulation layer, and a second line on the second surface to correspond to the first line. The first protective layer may include a transparent insulating material. 1. A display device comprising:a base layer having a first surface and a second surface;a pixel circuit layer comprising a first line on the first surface;a display element layer on the pixel circuit layer and comprising a display element;a thin film encapsulation layer on the display element layer;a first protective layer on the thin film encapsulation layer; anda second line on the second surface to correspond to the first line,wherein the first protective layer comprises a transparent insulating material.2. The display device according to claim 1 , wherein the first protective layer comprises molybdenum oxide (MoO) or silicon oxide (SiO).3. The display device according to claim 1 , wherein the display element layer comprises a light emitting element claim 1 , andthe light emitting element comprises an organic light emitting diode or an inorganic light emitting diode.4. The display device according to claim 3 , further comprising:a light conversion layer between the display element layer and the thin film encapsulation layer.5. The display device according to claim 4 , wherein the light conversion layer comprises:a color conversion layer on the light emitting element and comprising color conversion particles to convert first color light emitted from the light emitting element into second color light; anda color filter on the display element layer or the color conversion layer.6. The display device according to claim 1 , wherein the ...

ORGANIC LIGHT-EMITTING DEVICE

An organic light-emitting device includes electrodes and light-emitting units that each include an emission layer; and a charge generation layer, including n- and p-type charge generation layers, disposed between each adjacent pair of light-emitting units. A wavelength of maximum intensity of light emitted from one of the light-emitting units may be different from another, an n-type charge generation layer may have a metal-containing material having a work function of about 2.0 eV to about 4.5 eV, and a p-type charge generation layer may be formed of a hole transport material, an absolute value of a HOMO energy level of the hole transport material being greater than about 5.5 eV, and an absolute value of a LUMO energy level of the hole transport material being less than that of a LUMO energy level of a hole transport layer of a light-emitting unit adjacent to the p-type charge generation layer. 1. An organic light-emitting device , comprising:a first electrode, a second electrode facing the first electrode, and a plurality of light-emitting units disposed in a stack between the first and second electrodes, each light emitting unit including an emission layer; anda charge generation layer, including an n-type charge generation layer and a p-type charge generation layer, disposed between each adjacent pair of light-emitting units, wherein:a wavelength of maximum intensity of light emitted from one of the light-emitting units is different from the wavelength of maximum intensity of light emitted from another of the light-emitting units,at least one n-type charge generation layer consists of a metal-containing material having a work function of about 2.0 eV to about 4.5 eV, the metal-containing material being a metal, a metal oxide, a metal halide, or a combination thereof, andat least one p-type charge generation layer includes a hole transport material,at least one light-emitting unit adjacent to the p-type charge generation layer including the hole transport material ...

N-TYPE END-BONDED METAL CONTACTS FOR CARBON NANOTUBE TRANSISTORS

A method for manufacturing a semiconductor device includes forming a first dielectric layer on a substrate, forming a carbon nanotube (CNT) layer on the first dielectric layer, forming a second dielectric layer on the carbon nanotube (CNT) layer, patterning a plurality of trenches in the second dielectric layer exposing corresponding portions of the carbon nanotube (CNT) layer, forming a plurality of contacts respectively in the plurality of trenches on the exposed portions of the carbon nanotube (CNT) layer, performing a thermal annealing process to create end-bonds between the plurality of the contacts and the carbon nanotube (CNT) layer, and depositing a passivation layer on the plurality of the contacts and the second dielectric layer. 1. A method for manufacturing a semiconductor device , comprising:forming a first dielectric layer on a substrate;forming a carbon nanotube (CNT) layer on the first dielectric layer;forming a second dielectric layer on the carbon nanotube (CNT) layer;patterning a plurality of trenches in the second dielectric layer exposing corresponding first portions of the carbon nanotube (CNT) layer;forming a plurality of contacts respectively in the plurality of trenches on the exposed first portions of the carbon nanotube (CNT) layer;performing a thermal annealing process to create end-bonds between the plurality of contacts and the carbon nanotube (CNT) layer;wherein the first portions of the carbon nanotube layer beneath the plurality of contacts are entirely dissolved into the plurality of contacts to remove the first portions of the carbon nanotube layer from beneath the plurality of contacts;wherein second portions of the carbon nanotube (CNT) layer under the second dielectric layer remain after the thermal annealing process;wherein the end-bonds are formed between ends of the remaining second portions of the carbon nanotube (CNT) layer and ends of bottom portions of the plurality of contacts directly on the first dielectric layer in ...

DEVICE INCLUDING QUANTUM DOTS

A device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a first electrode and a second electrode, a layer comprising quantum dots disposed between the first electrode and the second electrodes, and a first interfacial layer disposed at the interface between a surface of the layer comprising quantum dots and a first layer in the device. In certain embodiments, a second interfacial layer is optionally further disposed on the surface of the layer comprising quantum dots opposite to the first interfacial layer. In certain embodiments, a device comprises a light-emitting device. Other light emitting devices and methods are disclosed. 1. A device including a first electrode and a second electrode , a layer comprising , quantum dots disposed between the first electrode and the second electrode , a first layer disposed between the first electrode and the layer comprising quantum dots , and a first interfacial layer disposed at the interface between a surface of the layer comprising quantum dots and the first layer , wherein the first interfacial layer is a distinct layer , wherein the first interfacial layer comprises a material non-quenching to quantum dot emission.2. A device in accordance with wherein the first layer comprises a material capable of injecting and transporting charge.3. A device in accordance with further comprising a second layer comprising a material capable of transporting charge disposed over the layer comprising quantum dots.4. A device in accordance with further comprising a second interfacial layer disposed between the layer comprising quantum dots and the second layer.5. A device in accordance with wherein the second layer comprises a material capable of injecting and transporting charge.6. A device in accordance with wherein the first layer comprises one or more inorganic materials.7. A device in accordance with wherein the second layer comprises one or more organic materials.825-. ( ...

ORGANIC LIGHT EMITTING DISPLAY DEVICE AND LIGHTING APPARATUS FOR VEHICLES USING THE SAME

An organic light emitting display device and a light apparatus for vehicles using the same are provided. The organic light emitting display device includes a first layer on a first electrode, a second layer on the first layer, a second electrode on the second layer, and an N-type charge generation layer between the first layer and the second layer. The first layer includes a first emission layer and a first electron transport layer, and the second layer includes a second emission layer and a second electron transport layer. A low unoccupied molecular orbitals (LUMO) level of the first electron transport layer is higher than a LUMO level of a host included in the N-type charge generation layer. 1. An organic light emitting display device , comprising:a first electrode and a second electrode;a first emission layer and a second emission layer between the first electrode and the second electrode;a charge generation layer on the first emission layer; andan electron transport layer between the first emission layer and the charge generation layer,wherein a low unoccupied molecular orbitals (LUMO) level of the electron transport layer is higher than a LUMO level of a host in the charge generation layer.2. The organic light emitting display device of claim 1 , wherein a difference between the LUMO level of the electron transport layer and the LUMO level of the host in the charge generation layer is greater than 0.2 eV.3. The organic light emitting display device of claim 1 , wherein a difference between the LUMO level of the electron transport layer and the LUMO level of the host in the charge generation layer is 0.4 eV or more.4. The organic light emitting display device of claim 1 , whereina thickness of the electron transport layer is 5 nm to 30 nm, andthe electron transport layer comprises one material or the electron transport layer is formed by co-depositing at least two materials.5. The organic light emitting display device of claim 1 , wherein the host of the charge ...

DISPLAY PANEL, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE HAVING THE SAME

A display panel includes an auxiliary electrode on a base substrate, a first electrode spaced from the auxiliary electrode, a first light emitting unit on the auxiliary electrode and the first electrode, an conductive thin film layer on the first light emitting unit, a second light emitting unit on the conductive thin film layer, a first contact hole through the conductive thin film layer to expose the auxiliary electrode, a insulating layer in the first contact hole, and a second electrode including a first electrode part and a second electrode part, the first electrode part being on the insulating layer in the first contact hole, and the second electrode part overlapping the first electrode and being on the second light emitting unit, wherein the insulating layer is between the first electrode part and the conductive thin film layer. 1. A display panel , comprising:a base substrate;an auxiliary electrode on the base substrate;a first electrode spaced apart from the auxiliary electrode when viewed in a plan view;a first light emitting unit on the auxiliary electrode and the first electrode;an conductive thin film layer on the first light emitting unit;a second light emitting unit on the conductive thin film layer;a first contact hole through at least the first light emitting unit, the conductive thin film layer, and the second light emitting unit to expose the auxiliary electrode;a insulating layer including a first part in the first contact hole; anda second electrode including a first electrode part and a second electrode part, the first electrode part being on the first part of the insulating layer and having at least a portion in the first contact hole, and the second electrode part overlapping the first electrode when viewed in a plan view, the second electrode part being on the second light emitting unit,wherein a first portion of the first part of the insulating layer is between the first electrode part and the conductive thin film layer to insulate the ...

ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE

An organic electroluminescence display device includes: a lower electrode that is made of a conductive inorganic material and formed in each of pixels arranged in a matrix in a display area; a light-emitting organic layer that is in contact with the lower electrode and made of a plurality of different organic material layers including a light-emitting layer emitting light; an upper electrode that is in contact with the light-emitting organic layer, formed so as to cover the whole of the display area, and made of a conductive inorganic mate-rial; and a conductive organic layer that is in contact with the upper electrode, formed so as to cover the whole of the display area, and made of a conductive organic material. 1. An organic electroluminescence display device comprising:a substrate including a display area and a non-display area surrounding the display area;a first electrode that is in the display area;an insulating film that is on the first electrode and covers an edge portion of the first electrode;a first organic layer that is in contact with the first electrode and includes a light-emitting layer emitting light;a second electrode that is in contact with the first organic layer;a second organic layer that is in contact with the second electrode;a first inorganic layer that is in contact with the first inorganic layer;a second inorganic layer that is on the first inorganic layer and in contact with the first inorganic layer in the non-display area; anda third organic layer that is between the first inorganic layer and the second inorganic layer.2. The organic electroluminescence display device according to claim 1 , whereina first distance and a second distance are distances between a top surface of the substrate and a top surface of the second organic layer;the first distance is in a first area that is included the insulating film in plan view;the second distance is in a second area that is not included the insulating film in plan view; andthe first distance ...

DISPLAY PANEL AND DRIVE METHOD THEREOF

A display panel includes: a transparent display substrate; an opposite substrate disposed opposite to the transparent display substrate; and a light adjusting layer disposed between the transparent display substrate and the opposite substrate. The light adjusting layer is configured in a way that, under action of an electric field, at least a part of the light adjusting layer transmits light or at least a part of the light adjusting layer reflects light. 1. A display panel , comprising:a transparent display substrate;an opposite substrate disposed opposite to the transparent display substrate; anda light adjusting layer disposed between the transparent display substrate and the opposite substrate, wherein the light adjusting layer is configured in a way that, under action of an electric field, at least a part of the light adjusting layer transmits light or at least a part of the light adjusting layer reflects light.2. The display panel according to claim 1 , wherein the light adjusting layer includes a transparent filler and reflectors dispersed in the transparent filler claim 1 , and the reflectors are configured to be arranged in a direction parallel to a direction of the electric field under the action of the electric field.3. The display panel according to claim 2 , wherein the reflectors are sheet-shaped reflectors claim 2 , and the reflectors are configured in a way that plane directions of the reflectors are parallel to the direction of the electric field under the action of the electric field.4. The display panel according to claim 2 , further comprising first driving electrodes and second driving electrodes spaced apart on a side of the opposite substrate facing the transparent display substrate claim 2 , whereinthe first driving electrodes and the second driving electrodes are all made of a transparent conductive material.5. The display panel according to claim 4 , wherein the first driving electrodes and the second driving electrodes are configured to ...

SUBSTRATE FOR ELECTRO-OPTICAL DEVICE, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC APPARATUS

An opposing substrate as a substrate for an electro-optical device includes a transparent base member and a light shielding portion disposed on a region between pixels on the base member. The light shielding portion includes a first reflective film and a second reflective film that is disposed to overlap the first reflective film and has a reflection rate lower than that of the first reflective film, and a first protective film that covers the first reflective film is provided between the first reflective film and the second reflective film. 1. An electro-optical device having a plurality of pixels including a first pixel and a second pixel adjacent to the first pixel comprising:a base member;a first color filter disposed over a surface of the base member, the first color filter being included in the first pixel;a second color filter disposed over the surface of the base member, the second color filter being included in the second pixel;a first reflective film disposed so as to overlap with a region between a first pixel and a second pixel in plan view, the first reflective film being disposed between the region and the surface of the base member;a second reflective film disposed to overlap with the first reflective film in plan view, the first reflective film being disposed between the region and the first reflective film; anda first protective film that covers the first reflective film, is provided between the first reflective film and the second reflective film.2. The electro-optical device according to claim 1 ,wherein the first reflective film including aluminum.3. The electro-optical device according to claim 1 ,wherein the first reflective film including silver.4. The electro-optical device according to claim 1 ,wherein the first reflective film including tungsten.5. The electro-optical device according to claim 1 ,wherein the second reflective film including titanium.6. The electro-optical device according to claim 1 ,wherein the second reflective film ...

DISPLAY DEVICE

A display device includes a base layer, a display element disposed on the base layer, and a signal line disposed on the base layer and electrically connected to the display element. The signal line includes a conductive layer and a capping layer. The capping layer is disposed on the conductive layer and includes vanadium nitride (VN) and zinc oxide (ZnO). The display device may reduce the reflection of an external light source, thereby having improved visibility. 1. A display device , comprising:a base layer;a display element disposed on the base layer; anda signal line disposed on the base layer and electrically connected to the display element, a conductive layer; and', 'a capping layer disposed on the conductive layer and including vanadium nitride (VN) and zinc oxide (ZnO)., 'wherein the signal line comprises2. The display device of claim 1 , wherein the capping layer further comprises aluminum oxide (AlO).3. The display device of claim 2 , wherein in the capping layer:a content of the vanadium nitride ranges from about 25 at % to about 80 at %,a content of the zinc oxide ranges from about 20 at % to about 70 at %, anda content of the aluminum oxide ranges from about 3 at % to about 10 at %.4. The display device of claim 1 , wherein reflectance of the capping layer is lower than reflectance of the conductive layer.5. The display device of claim 1 , wherein the capping layer is directly disposed on the conductive layer.6. The display device of claim 1 , wherein a mean reflectance of the signal line to visible light is equal to or less than about 20%.7. The display device of claim 1 , wherein the signal line further comprises an intermediate layer disposed between the conductive layer and the capping layer claim 1 , andwherein the intermediate layer has a refractive index between a refractive index of the conductive layer and a refractive index of the capping layer.8. The display device of claim 7 , wherein the intermediate layer comprises at least one selected ...

Organic Light-Emitting Display Device

An organic light-emitting display device protects a first electrode and reduces any effect due to light leakage from the top or the peripheral side of a bank, thereby increasing lifespan. The organic light-emitting display device includes a first electrode protective pattern. 1. An organic light-emitting display device , comprising:a substrate having a plurality of sub-pixels;first electrodes provided respectively in the sub-pixels;a first electrode protective pattern provided on an edge of each of the first electrodes and to be in contact with each of the first electrodes;a bank configured to overlap a portion of the first electrode protective pattern so as to define an emission area;an organic light-emitting layer on each of the first electrodes so as to correspond to the emission area; anda second electrode on the organic light-emitting layer,wherein the bank includes:a first layer configured to overlap a portion of each of the first electrodes so that the area between each of the first electrodes of the neighboring sub-pixels is filled with the first layer; anda second layer on the first layer so as to correspond to the area between each of the first electrodes of the neighboring sub-pixels.2. The device according to claim 1 , wherein a region of the bank that overlaps the portion of the first electrode protective pattern is located on the first electrode protective pattern.3. The device according to claim 1 , wherein the first electrode protective pattern is directly located only on the edge of the first electrode.4. The device according to claim 1 , wherein the first electrode protective pattern is directly located on a top and a side of the edge of the first electrode.5. The device according to claim 4 , wherein the first electrode protective pattern extends from the side of the edge of the first electrode so that an area between the first electrodes of the neighboring sub-pixels is filled with the first electrode protective pattern.6. The device according to ...

Method and apparatus for manufacturing semiconductor elements

The embodiment provides a method and an apparatus for manufacturing a semiconductor element showing high conversion efficiency and having a perovskite structure. The embodiment is a method for manufacturing a semiconductor element comprising an active layer having a perovskite structure. Said active layer is produced by the steps of: forming a coating film by directly or indirectly coating a first or second electrode with a coating solution containing a precursor compound for the perovskite structure and an organic solvent capable of dissolving said precursor compound; and then starting to blow a gas onto said coating film before formation reaction of the perovskite structure is completed in said coating film. Another embodiment is an apparatus for manufacturing a semiconductor element according to the above method.

ORGANIC ELECTROLUMINESCENT ELEMENT, ORGANIC ELECTROLUMINESCENT UNIT, AND ELECTRONIC APPARATUS

An organic electroluminescent element includes, in order, a first electrode, an organic light-emitting layer, a buffer layer, a metal thin film, an organic electron transport layer, and a second electrode. The buffer layer includes an electrically-conductive organic material. The metal thin film includes a metal or a metal alloy. The organic electron transport layer is doped with a metal. The metal in the metal thin film is the same as the metal doped in the organic electron transport layer. The metal alloy in the metal thin film includes a metal that is the same as the metal doped in the organic electron transport layer. 1. An organic electroluminescent element comprising , in order:a first electrode;an organic light-emitting layer;a buffer layer that includes an electrically-conductive organic material;a metal thin film that includes a metal or a metal alloy;an organic electron transport layer doped with a metal; anda second electrode,the metal in the metal thin film being same as the metal doped in the organic electron transport layer, the metal alloy in the metal thin film including a metal that is same as the metal doped in the organic electron transport layer.2. The organic electroluminescent element according to claim 1 , wherein the buffer layer satisfies following Expression (1):{'br': None, 'i': |E', 'E, '1−2|>0 \u2003\u2003Expression (1),'}{'b': 1', '2, 'where E denotes a work function of the metal thin film, and E denotes a lowest unoccupied molecular orbital energy level of the buffer layer.'}3. The organic electroluminescent element according to claim 2 , wherein the buffer layer satisfies following Expression (2):{'br': None, 'i': E', 'E, '0<|1−2|<0.6 eV \u2003\u2003Expression (2).'}4. The organic electroluminescent element according to claim 1 , wherein the buffer layer includes an organic material that is free from forming a metal complex even when the buffer layer is in contact with the metal thin layer.5. The organic electroluminescent element ...

LIGHTING APPARATUS USING ORGANIC LIGHT EMITTING DIODE

A lighting apparatus of the present disclosure divides a plurality of pixels and configures an auxiliary electrode which transmits a signal to the first substrate with a metal nano ink so that the light which is reflected from the interface between the first substrate and an external air layer to be incident is reflected and scattered again to improve the luminous efficiency of the lighting apparatus. 1. A lighting apparatus , comprising:a first substrate including a plurality of pixels;an auxiliary electrode disposed on the first substrate and defining the plurality of pixels and an electrical signal applied to the plurality of pixels through the auxiliary electrode; andan organic light emitting diode disposed in each pixel of the first substrate and including a first electrode, an organic light emitting layer, and a second electrode,wherein the auxiliary electrode is formed of metal nano ink and keeps reflecting and scattering light emitted from the organic light emitting diode at an interface between the first substrate and an external air layer.2. The lighting apparatus according to claim 1 , wherein the first electrode is formed of transparent metal oxide.3. The lighting apparatus according to claim 1 , wherein the metal nano ink includes4. ink and a plurality of metal nanoparticles dispersed in the metal nano ink. The lighting apparatus according to claim 3 , wherein the plurality of metal nanoparticles includes at least one metal selected from one group consisting of gold claim 3 , silver claim 3 , platinum claim 3 , copper claim 3 , nickel claim 3 , iron claim 3 , cobalt claim 3 , zinc claim 3 , chrome claim 3 , and manganese.5. The lighting apparatus according to claim 1 , wherein the first electrode is disposed on an upper surface of the first substrate.6. The lighting apparatus according to claim 1 , further comprising a light extracting layer disposed between the first electrode and the first substrate and improving light extraction efficiency.7. The ...

Encapsulation film and organic electronic device comprising the same

Provided are an encapsulation film, an organic electronic device comprising the same, and a method of manufacturing the organic electronic device. When the organic electronic device is encapsulated using the encapsulation film, an excellent moisture barrier property may be realized, and as reflection or scattering of light is prevented by absorbing and blocking internal or external light, external defects of the organic electronic device may be prevented.

ORGANIC EL ELEMENT, ORGANIC EL DISPLAY PANEL, AND METHOD OF MANUFACTURING ORGANIC EL DISPLAY PANEL

Disclosed herein is an organic EL element including a first electrode, a light emitting layer, a ground layer, and a light-transmitting second electrode stacked in this order over a substrate. The ground layer is light-emitting and electrically conductive, and its surface on which the second electrode is stacked has a surface roughness of 0.3 to 2.7 nm. The second electrode is a silver thin film layer formed of silver or containing silver as a main constituent. 1. An organic EL element comprising:a first electrode, a light emitting layer, a ground layer, and a light-transmitting second electrode stacked in this order over a substrate,wherein the ground layer is light-emitting and electrically conductive, and its surface on which the second electrode is stacked has a surface roughness of 0.3 to 2.7 nm, andthe second electrode is a silver thin film layer formed of silver or containing silver as a main constituent.2. An organic EL element comprising:a first electrode, a light emitting layer, a ground layer, and a light-transmitting second electrode stacked in this order over a substrate,{'sup': '2', 'wherein the ground layer is light-transmitting and electrically conductive, and its surface on which the second electrode is stacked has a surface free energy of 33 to 97 mJ/m, and'}the second electrode is a silver thin film layer formed of silver or containing silver as a main constituent.3. The organic EL element according to claim 1 ,wherein the thickness of the silver thin film layer is 10 to 20 nm.4. The organic EL element according to claim 2 ,wherein the thickness of the silver thin film layer is 10 to 20 nm.5. The organic EL element according to claim 1 ,wherein the ground layer is an organic layer.6. The organic EL element according to claim 2 ,wherein the ground layer is an organic layer.7. The organic EL element according to claim 1 ,wherein the second electrode is a cathode, and the ground layer is an electron injection layer or an electron transport layer.8. ...

ORGANIC ELECTROLUMINESCENCE DEVICE

An organic electroluminescence device includes an anode, a hole transport region, an emission region, an electron transport region, and a cathode. The hole transport region is provided on the anode. The emission layer is provided on the hole transport region. The electron transport region is provided on the emission layer. The cathode is provided on the electron transport region. The emission layer includes a first compound represented by the following Formula 1 and a second compound represented by the following Formula 2. 2. The organic electroluminescence device as claimed in claim 1 , wherein a triplet excitation energy of the second compound is higher than a singlet excitation energy of the first compound.3. The organic electroluminescence device as claimed in claim 1 , wherein Arand Arin Formula 1 are the same.4. The organic electroluminescence device as claimed in claim 1 , wherein Arand Arin Formula 1 are each independently selected from a substituted or unsubstituted carbazole claim 1 , a substituted or unsubstituted dibenzofuran claim 1 , a substituted or unsubstituted dibenzothiophene claim 1 , a substituted or unsubstituted fluorenyl claim 1 , or a substituted or unsubstituted dibenzosilole.6. The organic electroluminescence device as claimed in claim 1 , wherein X in Formula 2 is O.8. The organic electroluminescence device as claimed in claim 1 , wherein Y is NR claim 1 , and Rin Formula 3 is ethyl or phenyl.9. The organic electroluminescence device as claimed in claim 1 , wherein Y is CRR claim 1 , and Rand Rin Formula 3 are each independently methyl or phenyl.10. The organic electroluminescence device as claimed in claim 1 , wherein Y is SiRR claim 1 , and Rand Rin Formula 3 are each independently methyl or phenyl.13. The organic electroluminescence device as claimed in claim 1 , wherein the first compound is a dopant claim 1 , and the second compound is a host claim 1 , the host being present in a greater weight percentage than the dopant in the ...

FLEXIBLE DISPLAY DEVICE

A flexible display device includes a substrate which is bendable or rollable based on an axis, a plurality of display elements on the substrate, and a plurality of thin-film encapsulation patterns which covers the plurality of display elements, where the plurality of thin-film encapsulation patterns includes a first thin-film encapsulation pattern and a second thin-film encapsulation pattern, which are apart from each other in a direction crossing the axis, and each of the first thin-film encapsulation pattern and the second thin-film encapsulation pattern extends in parallel to the axis of the flexible display device. 1. A flexible display device comprising:a substrate which is bendable or rollable based on an axis;a plurality of display elements on the substrate; anda plurality of thin-film encapsulation patterns which covers the plurality of display elements, whereinthe plurality of thin-film encapsulation patterns comprise a first thin-film encapsulation pattern and a second thin-film encapsulation pattern, which are apart from each other in a direction crossing the axis, andeach of the first thin-film encapsulation pattern and the second thin-film encapsulation pattern extends in parallel to the axis of the flexible display device.2. The flexible display device of claim 1 , whereineach of the first thin-film encapsulation pattern and the second thin-film encapsulation pattern comprises an organic encapsulation layer and an inorganic encapsulation layer.3. The flexible display device of claim 1 , whereineach of the first thin-film encapsulation pattern and the second thin-film encapsulation pattern comprises a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer, which are sequentially stacked one on another,the organic encapsulation layer of the first thin-film encapsulation pattern and the organic encapsulation layer of the second thin-film encapsulation pattern are apart from each other, andthe second ...

Display panel and manufacturing method thereof, and display device

The disclosure provides a display panel and a manufacturing method thereof, and a display device. The display panel includes a substrate; an array of pixel units disposed on a first side of the substrate, wherein each of at least some of the pixel units comprises: a light emitting layer, an anode layer and a primary cathode layer which is light transmissive disposed on two sides of the light emitting layer, the anode layer being closer to the substrate than the primary cathode layer; an array of sensors disposed on one side of the array of pixel units, which is far away from the substrate, and each sensor senses the light emitted from a corresponding pixel unit.

DISPLAY PANEL AND DISPLAY DEVICE

The present disclosure discloses a display panel and a display device. The display device includes a first display area and a second display area, where the first display area includes a plurality of first sub-pixel units, and each of the first sub-pixel units includes a first light emitting device and a driving circuit for driving the first light emitting device to emit light; where the second display area includes a plurality of second sub-pixel units and a plurality of first voltage signal lines, each of the second sub-pixel units includes a second light emitting device, and the first voltage signal lines are directly and electrically connected to anodes of the second light emitting devices. 1. A display panel comprising:a first display area; anda second display area; a plurality of first sub-pixel units;', a first light emitting device; and', 'a driving circuit for driving the first light emitting device to emit light;, 'wherein each of the first sub-pixel units comprises], 'wherein the first display area comprises a plurality of second sub-pixel units; and', 'a plurality of first voltage signal lines;', a second light emitting device; and', 'wherein the first voltage signal lines are directly and electrically connected to anodes of the second light emitting devices., 'wherein each of the second sub-pixel units comprises], 'wherein the second display area comprises2. The display panel of claim 1 , wherein a pixel density of the first sub-pixel units is larger than that of the second sub-pixel units.3. The display panel of claim 1 , wherein the plurality of second sub-pixel units constitute a plurality of sub-display areas claim 1 , and a light transmitting area is arranged between every two adjacent sub-display areas.4. The display panel of claim 1 , wherein the first display area further comprises a plurality of second voltage signal lines claim 1 , and the second voltage signal lines are electrically connected to anodes of the first light emitting devices ...

LIGHT EMITTING DEVICE (LED) AND MULTI-STACKED LED INCLUDING CHARGE GENERATION JUNCTION (CGJ) LAYER, AND MANUFACTURING METHOD THEREOF

Provided is a light emitting diode (LED) and a multi-stacked LED including a charge generation junction (CGJ) layer, and a manufacturing method thereof. An LED including an anode, a hole transport layer, a light emitting layer, and a cathode, includes a CGJ layer in a layer-by-layer structure in which an n-type oxide and a p-type oxide formed on at least one surface of the light emitting layer are sequentially stacked. Here, the n-type oxide includes zinc oxide (ZnO) and the p-type oxide is represented by the following Formula: CuSnS—(Ga)O. Here, 0.2 Подробнее

LIGHT EMITTING DISPLAY APPARATUS

A light emitting display apparatus according to an exemplary embodiment of the present disclosure includes a plurality of light emitting elements on a substrate, an encapsulation part on the plurality of light emitting elements, a plurality of light collecting patterns on the encapsulation part and formed of an inorganic material, and an organic layer on the encapsulation part and the plurality of light collecting patterns and formed of a material having a refractive index lower than a refractive index of the plurality of light collecting patterns. 1. A light emitting display apparatus , comprising:a plurality of light emitting elements on a substrate;an encapsulation part on the plurality of light emitting elements;a plurality of light collecting patterns on the encapsulation part and formed of an inorganic material; andan organic layer on the encapsulation part and the plurality of light collecting patterns, and formed of a material having a refractive index lower than a refractive index of the plurality of light collecting patterns.2. The light emitting display apparatus of claim 1 , wherein the plurality of light collecting patterns are disposed to overlap the plurality of light emitting elements.3. The light emitting display apparatus of claim 1 , wherein the plurality of light collecting patterns are composed of a plurality of inorganic patterns that are stacked.4. The light emitting display apparatus of claim 1 , further comprising:a polarizing plate on the organic layer,wherein the organic layer is an adhesive layer on a lower surface of the polarizing plate.5. The light emitting display apparatus of claim 1 , further comprising:a polarizing plate on the organic layer; andan adhesive layer on a lower surface of the polarizing plate,wherein an upper surface of the organic layer is in contact with the adhesive layer.6. The light emitting display apparatus of claim 1 , further comprising:a touch part on the encapsulating part,wherein the touch part includes a ...

ORGANIC LIGHT EMITTING DEVICE

An OLED device comprises a substrate, a first electrode positioned over the substrate, a second electrode positioned over the first electrode, at least one emissive layer positioned between the first and second electrodes in a first region of the OLED device, and a multilayer dielectric reflector stack, comprising a plurality of dielectric reflector layers positioned between the substrate and the first electrode, wherein the multilayer dielectric reflector stack is configured to form an optical cavity with the emissive layer having a Purcell Factor of at least 3. 1. An OLED device , comprising:a substrate;a first electrode positioned over the substrate;a second electrode positioned over the first electrode;at least one emissive layer positioned between the first and second electrodes in a first region of the OLED device; anda multilayer dielectric reflector stack, comprising a plurality of dielectric reflector layers positioned between the substrate and the first electrode;wherein the multilayer dielectric reflector stack is configured to form an optical cavity with the emissive layer having a Purcell Factor of at least 3.2. The OLED device of claim 1 , further comprising a hole transport layer between the emissive layer and the first electrode.3. The OLED device of claim 1 , further comprising an electron transport layer between the emissive layer and the second electrode.4. The OLED device of claim 1 , wherein the multilayer dielectric reflector stack comprises alternating layers of first and second metal compounds.5. The OLED device of claim 4 , wherein the first metal compound is TiOand the second metal compound is MgF.6. The OLED device of claim 5 , wherein the alternating layers of TiOand MgFconsists of two layers of TiOand two layers of MgF.7. The OLED device of claim 4 , wherein at least one layer of the layers of the first metal compound has a thickness that is different than a thickness of at least one other layer of the layers of the first metal compound. ...

FABRICATION AND/OR APPLICATION OF ZINC OXIDE CRYSTALS WITH INTERNAL (INTRA-CRYSTALLINE) POROSITY

Briefly, an embodiment comprises fabricating and/or uses of one or more zinc oxide crystals in which one or more zinc oxide crystals have intra-crystalline porosity other than incidental intra-crystalline porosity. 1. A composition of matter comprising: one or more zinc oxide crystals , wherein the one or more zinc oxide crystals have intra-crystalline porosity other than incidental intra-crystalline porosity.2. The composition of matter of claim 1 , wherein the one or more zinc oxide crystals form at least part of at least one of the following: an epitaxial film; a single crystal film; a single crystal particle; a bulk single crystal claim 1 , or an array or a pattern of micro- or smaller dimensioned single crystal structures.3. The composition of matter of claim 1 , wherein the one or more zinc oxide crystals form at least part of least one of the following: a polycrystalline film; a polycrystalline particle; a bulk polycrystalline body claim 1 , or an array or pattern of micro- or smaller dimensioned polycrystalline structures.4. The composition of matter of claim 1 , wherein the intra-crystalline porosity other than incidental intra-crystalline porosity comprises a sufficient amount so as to at least alter one or more aspects of reflection claim 1 , transmission and/or absorption of light incident to the one or more zinc oxide crystals.5. The composition of matter of claim 1 , wherein the intra-crystalline porosity other than incidental intra-crystalline porosity comprises a sufficient amount of intra-crystalline porosity so as to at least alter thermal conductivity and/or electrical conductivity of the one or more zinc oxide crystals claim 1 , wherein any relative change in respective conductivities is not commensurate.6. The composition of matter of claim 1 , wherein the intra-crystalline porosity other than incidental intra-crystalline porosity comprises a sufficient amount of intra-crystalline porosity so as to at least alter the optical properties of the ...