PLASMA ATOMIC LAYER GROWTH DEVICE

The present invention is provided with: a cylindrical, insulating injector adhesion-prevention material that can be attached at a gas introduction opening from inside a film-formation container and that surrounds the gas introduction opening; a cylindrical, insulating exhaust adhesion-prevention material that can be attached at an exhaust opening from inside the film-formation container and that surrounds the exhaust opening; and an insulating film-formation chamber adhesion-prevention material that can be attached at an inner-wall side of the film-formation container. The injector adhesion-prevention material has a gap that is between plate-electrode and facing-electrode sides and has a tip that is positioned to the inside with respect to an end of the plate electrode. The exhaust adhesion-prevention material has a gap that is between plate-electrode and facing-electrode sides and has a tip that is positioned to the inside with respect to the end of the plate electrode. The film-formation ...

ATOMIC LAYER DEPOSITION DEVICE AND ATOMIC LAYER DEPOSITION METHOD

Provided is an atomic layer deposition device which controls film thickness so as to be uniform over the entire area of a substrate. An atomic layer deposition device forms a thin film upon a substrate, said atomic layer deposition device being characterized in being provided with: a deposition container in which a substrate is disposed in the interior thereof, and on which a plurality of exhaust ports, which emit gas from the interior, are spaced apart from one another to be provided to be arranged in parallel with a surface on which a thin film of the substrate has been formed; a raw material gas supply unit which supplies raw material gas for the thin film to within the deposition container; a reactant gas supply unit which supplies a reactant gas forming, in reaction to components of the adsorbed raw material gas at the substrate, the thin film to within the deposition container; exhaust valves which are connected to each of the exhaust ports; and a control unit which controls the amount ...

ATOMIC LAYER GROWTH DEVICE

The present invention is provided with an injector that is attached at a film-formation container opening and with an injector adhesion-prevention material that is inserted into and attached at the opening. An injector raw-material-gas supply path, an injector raw-material-gas supply port, an injector reactant-gas supply path, an injector reactant-gas supply port, an injector inactive-gas supply path, and an injector inactive-gas supply port are demarcated and provided to the injector. An adhesion-prevention material raw-material-gas supply path, an adhesion-prevention material raw-material-gas supply port, an adhesion-prevention material reactant-gas supply path, an adhesion-prevention material reactant-gas supply port, an adhesion-prevention material inactive-gas supply path, and an adhesion-prevention material inactive-gas supply port are demarcated and provided to the injector adhesion-prevention material. The adhesion-prevention material inactive-gas supply path is provided to a gap ...

ATOMIC LAYER GROWTH DEVICE AND ATOMIC LAYER GROWTH DEVICE EXHAUST UNIT

The present invention is provided with: a cylindrical exhaust piping connection part that is attached to the outside of an exhaust opening, which is provided in a film-formation container, that has an outer-circumferential surface that is larger than the opening, and that has an exhaust path positioned on a cylindrical-hole side thereof; and a cylindrical exhaust adhesion-prevention material that is inserted into and attached at the opening so as to be located on the inside of the film-formation container and that has the exhaust path positioned on a cylindrical-hole side thereof. The exhaust piping connection part is provided with: a connection part inactive-gas supply path, which is demarcated from the exhaust path and through which an inactive gas flows; and a connection part inactive-gas supply port, which is provided to the connection part inactive-gas supply path and through which the inactive gas flows out toward an opening side. The exhaust adhesion-prevention material is provided ...

ATOMIC LAYER GROWTH DEVICE

An atomic layer growth device that forms a thin film upon a substrate and that is provided with: a film-formation container; a stage that is arranged inside the film-formation container; a susceptor that holds the substrate upon the stage; a mask that is arranged upon the substrate and that is large enough to surround the substrate; a vertically movable mask pin that supports the mask; and a mask-pin hole that vertically passes through the stage and the susceptor and that has the mask pin inserted therethrough such that the mask pin is vertically movable. The susceptor has: a susceptor main body that has a holding surface for the substrate; and a susceptor peripheral-edge section that is located at the perimeter of the susceptor main body and that is shorter in height than the holding surface. The mask-pin hole opens in the susceptor peripheral-edge section. An inactive-gas supply port that upwardly discharges gas to the perimeter of the holding surface is provided to the susceptor peripheral-edge ...

ATOMIC LAYER DEPOSITION APPARATUS AND ATOMIC LAYER DEPOSITION METHOD

An atomic layer deposition apparatus that uniformly controls film thickness throughout an entire area of a substrate includes: a film formation container in which the substrate is disposed inside, the film formation container provided with a plurality of exhaust ports for discharging an internal gas, the plurality of exhaust ports arranged at intervals and arranged parallel to a surface of the substrate on which the thin film is formed; a source gas supply unit that supplies a source gas of the thin film into the film formation container; a reactive gas supply unit that supplies, into the film formation container, a reactive gas for forming the thin film in reaction with a component of the source gas adsorbed to the substrate; exhaust valves connected to the exhaust ports; and a control unit that controls the plurality of exhaust valves to control an exhaust volume from each of the exhaust ports.

DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

A method of manufacturing a display apparatus having an organic EL element includes: a step of forming the organic EL element over a substrate made of a flexible substrate; and a step of forming a protecting film made of an inorganic insulating material so as to cover the organic EL element by using an ALD method. In the step of forming the protecting film , the protecting film is formed by alternately performing a step of forming a high-density layer H by using an ALD method and a step of forming, by using an ALD method, a low-density layer L that has the same constituent element as the high-density layer H and has a lower density than the high-density layer H. The protecting film has a layered structure made of one or more high-density layers H and one or more low-density layers L so that the low-density layer L and the high-density layer H are alternately layered so as to be in contact with each other. 1. A display apparatus comprising:a flexible substrate;an organic EL element formed over the flexible substrate; anda protecting film made of an inorganic insulating material formed so as to cover the organic EL element,wherein the protecting film has a layered structure made of one or more high-density layers and one or more low-density layers having a lower density than a density of the high-density layer so that the low-density layer and the high-density layer are alternately layered so as to be in contact with each other, andthe one or more high-density layers and the one or more low-density layers configuring the protecting film have the same constituent element as each other.2. The display apparatus according to claim 1 ,wherein each of the one or more high-density layers and the one or more low-density layers configuring the protecting film is made of a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, a titanium oxide layer, a zirconium oxide layer, an aluminum oxide layer, an aluminum oxynitride layer or an aluminum nitride layer, ...

Film-forming method, manufacturing method of electronic device, and mask holder

In order to suppress a film from being formed in a gap between a mask and a substrate, a technology of improving adhesion between the mask and the substrate is provided. A film-forming method includes the step of suspending a mask MK by a suspension portion HU in a state in which the suspension portion HU is supported by a supporting portion SU and the step of bringing the mask MK suspended by the suspension portion HU into contact with a glass substrate GS in the state in which the suspension portion HU is supported by the supporting portion SU.

Film-forming method, manufacturing method of electronic device, and plasma atomic layer deposition apparatus

In a film-forming technology using charged particles, a disturbance in film thickness distribution caused by leakage magnetic field is suppressed. A film-forming method embodies a technological idea of switching generation and stop of a magnetic field during a film-forming operation so as to stop the generation of the magnetic field during a period when plasma is generated and generate the magnetic field during a period when plasma is not generated.

Atomic layer deposition apparatus

A film quality of a film formed on a substrate is improved. A plasma atomic layer deposition apparatus has a lower electrode holding the substrate, and an upper electrode having an opposite surface opposed to the lower electrode and generating plasma discharge between the upper electrode and the lower electrode. Further, the plasma atomic layer deposition apparatus has a conductive deposition preventing member fixed to the opposite surface of the upper electrode by a plurality of screws, and other conductive deposition preventing member fixed to the conductive deposition preventing member by a plurality of others screws. At this time, in a plan view, the plurality of screws and the plurality of other screws are arranged so as not to overlap each other.

ATOMIC LAYER DEPOSITION APPARATUS, FILM-FORMING METHOD USING ATOMIC LAYER DEPOSITION APPARATUS, AND CLEANING METHOD OF ATOMIC LAYER DEPOSITION APPARATUS

A plasma atomic layer deposition apparatus includes: a source gas supply port functioning also as a cleaning gas supply port provided on a first side wall of a film-forming container; and a source gas exhaust port functioning also as a cleaning gas exhaust port provided on a second side wall opposed to the first side wall of the film-forming container. 1. An atomic layer deposition apparatus comprising:a film-forming container;a lower electrode arranged on a lower surface of the film-forming container;an upper electrode arranged on an upper surface of the film-forming container and configured to generate plasma discharge with the lower electrode;a gas supply port provided on a first side wall of the film-forming container intersecting with the lower surface and the upper surface;a gas exhaust port provided on a second side wall of the film-forming container intersecting with the lower surface and the upper surface and opposed to the first side wall;a first adhesion preventing member in contact with both the film-forming container and the lower electrode; anda second adhesion preventing member in contact with both the film-forming container and the upper electrode.2. The atomic layer deposition apparatus according to claim 1 ,wherein a gap is present between the film-forming container and the lower electrode, andthe first adhesion preventing member closes the gap.3. An atomic layer deposition apparatus comprising:a lower electrode for holding a substrate;an upper electrode having an opposing surface opposed to the lower electrode and configured to generate plasma discharge with the lower electrode;a film-forming container including a film-forming space configured of an upper space of the lower electrode and a lower space of the upper electrode;a lower adhesion preventing member provided between a lower space of the lower electrode and the film-forming space;an upper adhesion preventing member attached to the upper electrode;a source gas supply port provided on a ...

Method of forming protection film for organic el device, method of manufacturing display device and display device

A method of manufacturing a display device having an organic EL device includes the steps of : forming an organic EL device over a substrate; and forming a protection film so as to cover the organic EL device. The protection film is made of a laminated film of a first insulating film containing Si, a second insulating film containing Al and a third insulating film containing Si. The step of forming the protection film includes the steps of: forming the first insulating film by a plasma CVD method so as to cover the organic EL device; forming the second insulating film over the first insulating film by an ALD method; and forming the third insulating film over the second insulating film by a plasma CVD method.

Atomic layer deposition apparatus and film-forming method

An atomic layer deposition apparatus includes a chamber, a stage which is disposed in the chamber and over which a substrate is placed, an opening which is provided in a side wall of the chamber, an opening and closing part which is connected to the opening, and a movable adhesion preventing member disposed in the chamber. The opening is an opening for transferring the substrate. The adhesion preventing member is located at a position where it covers the opening in a state where the opening and closing part is closed.

FILM-FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND PLASMA ATOMIC LAYER DEPOSITION APPARATUS

In a film-forming technology using charged particles, a disturbance in film thickness distribution caused by leakage magnetic field is suppressed. A film-forming method embodies a technological idea of switching generation and stop of a magnetic field during a film-forming operation so as to stop the generation of the magnetic field during a period when plasma is generated and generate the magnetic field during a period when plasma is not generated. 115-. (canceled)16. A plasma atomic layer deposition apparatus that forms a film over a substrate by using a mask made of a magnetic substance disposed over the substrate and plasma generated above the substrate , the apparatus comprising:a substrate loading unit over which the substrate is loaded;an upper electrode provided above the substrate loading unit;a high frequency power source unit connectable to the upper electrode;a magnetic field generating unit provided in the substrate loading unit; anda control unit that controls generation and stop of a magnetic field from the magnetic field generating unit and controls supply and stop of a high frequency voltage to the upper electrode,wherein the control unit switches the generation and stop of the magnetic field from the magnetic field generating unit during a film-forming process.17. The plasma atomic layer deposition apparatus according to claim 16 ,wherein the control unit stops the generation of the magnetic field from the magnetic field generating unit during a period when the plasma is generated.18. The plasma atomic layer deposition apparatus according to claim 16 ,wherein the control unit stops the generation of the magnetic field from the magnetic field generating unit during a period when the high frequency voltage is supplied to the upper electrode.19. The plasma atomic layer deposition apparatus according to claim 18 ,wherein the control unit generates the magnetic field from the magnetic field generating unit during a period when the supply of the high ...

APPARATUS FOR ATOMIC LAYER DEPOSITION AND EXHAUST UNIT FOR APPARATUS FOR ATOMIC LAYER DEPOSITION

An apparatus for atomic layer deposition includes a film deposition chamber, a tubular exhaust pipe connecting section mounted to an outer side of an opening section provided in the film deposition chamber, and a tubular exhaust adhesion preventive member located inside the film deposition chamber and inserted into and mounted on the opening section. The exhaust pipe connecting section is provided with an inert-gas supply passage and an inert-gas supply port, both in the connecting section. The exhaust adhesion preventive member is provided with an inert-gas supply passage formed of a gap between each of an inner peripheral surface of the opening section and an inner wall of the film deposition chamber around the opening section, and the adhesion preventive member, and an inert-gas discharge port provided in the inert-gas supply passage, and from which the inert gas flows out into the film deposition chamber. 1. An apparatus for atomic layer deposition comprising:a film deposition chamber;a tubular exhaust pipe connecting section, which is mounted to an outer side of an opening section for exhausting gas provided in the film deposition chamber, whose outer peripheral surface is larger in size than the opening section, and in which an exhaust passage is located on a tube hole side; anda tubular exhaust adhesion preventive member which is located inside the film deposition chamber and is inserted into and mounted to the opening section, and in which an exhaust passage is located on a tube hole side, whereinthe exhaust pipe connecting section is provided with:an inert-gas supply passage for connecting section which is partitioned from the exhaust passage and in which inert gas flows; and an inert-gas supply port for connecting section which is provided in the inert-gas supply passage for connecting section, and through which the inert gas flows out to the opening section side, and wherein:the exhaust adhesion preventive member is provided with:an inert-gas supply ...

APPARATUS FOR PLASMA ATOMIC LAYER DEPOSITION

An apparatus for plasma atomic layer deposition includes a tubular, insulating injector adhesion preventive member mountable to a gas-introducing opening section from inside a film forming chamber, a tubular, insulating exhaust adhesion preventive member mountable to an exhaust opening section from inside the film forming chamber, and an insulating film forming chamber adhesion preventive member mountable to an inner wall side of the film forming chamber. The injector adhesion preventive member and the exhaust adhesion preventive member are separated from each of a plate electrode and a counter electrode side, and the film forming chamber adhesion preventive member is disposed on each side of the injector adhesion preventive member and the exhaust adhesion preventive member to be separated from each of the plate electrode and the counter electrode side. The apparatus further includes an upper and lower inert-gas supply port that purges inert gas toward inside the film forming chamber. 1. An apparatus for plasma atomic layer deposition for forming a thin film on a substrate , the apparatus comprising:a film forming chamber;a plate electrode provided so as to face a substrate retained in the film forming chamber;a counter electrode retaining the substrate within the film forming chamber;a gas-introducing opening section provided in one side wall section of the film forming chamber; and an exhaust opening section provided in the other side wall section, which faces the one side wall section, of the film forming chamber, whereinthe apparatus for plasma atomic layer deposition further comprises:an insulating injector adhesion preventive member which is mountable to the gas-introducing opening section from inside the film forming chamber, and is disposed in a tubular shape so as to surround an opening of the gas-introducing opening section;an insulating exhaust adhesion preventive member which is mountable to the exhaust opening section from inside the film forming ...

DEVICE FOR ATOMIC LAYER DEPOSITION

A device for atomic layer deposition includes: a film deposition chamber; a stage installed inside the film deposition chamber; a susceptor that holds, on the stage, a substrate; a mask disposed on the substrate, the mask being sized to encompass the substrate; a mask pin that supports the mask; and a mask pin hole bored through the stage and the susceptor vertically, and allows the mask pin to be inserted in a vertically movable manner, wherein the susceptor has a susceptor body having a holding surface of the substrate, and a susceptor peripheral edge located around the susceptor body and having a height lower than the holding surface, the mask pin hole is opened in the susceptor peripheral edge, and in the susceptor peripheral edge, an inert gas supply port that releases gas upward is provided around the holding surface in a surrounding area of the mask. 1. A device for atomic layer deposition that forms a thin film on a substrate , the device for atomic layer deposition comprising:a film deposition chamber;a stage that is installed inside the film deposition chamber;a susceptor that holds, on the stage, the substrate;a mask that is disposed on the substrate, the mask being sized to encompass the substrate;a mask pin that supports the mask, and is movable upward and downward; anda mask pin hole that is bored through the stage and the susceptor in a vertical direction, and allows the mask pin to be inserted in movable up and down manner, wherein:the susceptor has a susceptor body having a holding surface of the substrate, and a susceptor peripheral edge located around the susceptor body, the susceptor peripheral edge having a height lower than the holding surface,the mask pin hole is opened in the susceptor peripheral edge, andin the susceptor peripheral edge, an inert gas supply port that releases gas upward is provided around the holding surface in a surrounding area of the mask, and an inert gas supply path for supplying inert gas is connected to the inert gas ...

DEVICE FOR ATOMIC LAYER DEPOSITION

A device for atomic layer deposition includes: an injector installed to an opening of a film deposition chamber; and an injector adhesion preventive member installed by insertion into the opening, wherein the injector includes an injector raw material gas supply path, an injector reactant gas supply path, and an injector inert gas supply path, the respective paths being partitioned from each other, the injector adhesion preventive member includes an adhesion preventive member raw material gas supply path, an adhesion preventive member reactant gas supply path, and an adhesion preventive member inert gas supply path, the respective paths being partitioned from each other, and the adhesion preventive member inert gas supply path is provided such that the inert gas flows in a clearance between an outer peripheral side of the injector adhesion preventive member and an inner peripheral side of the opening. 1. A device for atomic layer deposition comprising:a film deposition chamber;an injector that is installable to an opening of the film deposition chamber; andan injector adhesion preventive member that is installable by insertion into the opening so as to be located on an inside of the film deposition chamber than the injector, wherein: an injector raw material gas supply path for supplying raw material gas as a raw material of a thin film, and an injector raw material gas supply port that is provided in the injector raw material gas supply path that the raw material gas flows out;', 'an injector reactant gas supply path for supplying reactant gas which reacts with the raw material gas to form the thin film, and an injector reactant gas supply port that is provided in the injector reactant gas supply path that the reactant gas flows out; and', 'an injector inert gas supply path that an inert gas flows, and an injector inert gas supply port that is provided in the injector inert gas supply path that the inert gas flows out, the respective paths and ports being ...

ATOMIC LAYER DEPOSITION APPARATUS AND ATOMIC LAYER DEPOSITION METHOD

An atomic layer deposition apparatus includes a film-forming container in which a film-forming process is performed, a vertically movable stage configured to hold a substrate , a susceptor held on the stage and being configured to hold the substrate , and a stage stopper configured to stop rising of the stage and, when in contact with the susceptor , partitioning a film-forming space S in which the film-forming process is performed and a transporting space in which transport of the substrate is performed. Further, the susceptor 50 includes an upper susceptor substrate holding portion B configured to hold the substrate , and an upper susceptor peripheral portion A arranged in a periphery of the upper susceptor substrate holding portion B, wherein a susceptor deposition prevention member is provided on the upper susceptor peripheral portion A. 1. An atomic layer deposition apparatus comprising:a film-forming container in which a film-forming process is performed on a substrate;a vertically movable stage provided in the film-forming container;a susceptor held on the stage and being configured to hold the substrate; anda stage stopper configured to stop rising of the stage and, when in contact with the susceptor, partitioning a film-forming space in which the film-forming process is performed and a transporting space in which transport of the substrate is performed,wherein the susceptor comprises a first susceptor configured to hold the substrate, and a second susceptor arranged in a periphery of the first susceptor, anda susceptor deposition prevention member is provided on the second susceptor.2. The atomic layer deposition apparatus according to claim 1 ,wherein the susceptor includes an upper susceptor constituted by the first susceptor and the second susceptor, and a lower susceptor configured to support the upper susceptor,the upper susceptor comprises an upper susceptor substrate holding portion including a holding surface configured to hold the substrate, and an ...

PLASMA ATOMIC LAYER DEPOSITION APPARATUS AND ATOMIC LAYER DEPOSITION METHOD

A plasma atomic layer deposition apparatus capable of improving a film quality of a film formed on a substrate is provided. The atomic layer deposition apparatus is a plasma atomic layer deposition apparatus configured to form the film on the substrate is in an atomic layer unit by generating plasma discharge between a lower electrode BE holding the substrate 15 and a facing upper electrode UE, and has a deposition prevention member CTM made of an insulator surrounding the upper electrode UE but being away therefrom in a plan view. 1. A plasma atomic layer deposition apparatus forming a film on a substrate , comprising:a first electrode configured to hold the substrate;a second electrode facing the first electrode and configured to generate plasma discharge between the second electrode and the first electrode; anda deposition prevention member made of an insulator surrounding the second electrode but being away therefrom in a plan view.2. The plasma atomic layer deposition apparatus according to claim 1 ,wherein the plasma atomic layer deposition apparatus further has an insulating support member configured to support the second electrode, andthe deposition prevention member is arranged so as to overlap the insulating support member in a plan view.3. The plasma atomic layer deposition apparatus according to claim 1 , a surface facing the first electrode;', 'a first side surface crossing the surface;', 'a second side surface positioned on an opposite side of the first side surface;', 'a third side surface crossing the surface and the first side surface; and', 'a fourth side surface positioned on an opposite side of the third side surface,, 'wherein the second electrode has a first part facing the first side surface of the second electrode;', 'a second part facing the second side surface of the second electrode;', 'a third part facing the third side surface of the second electrode; and', 'a fourth art facing the fourth side surface of the second electrode, and, 'the ...

ATOMIC LAYER DEPOSITION APPARATUS AND ATOMIC LAYER DEPOSITION METHOD

An atomic layer deposition apparatus includes: a film-forming container in which a film-forming process is performed; a vertically movable stage provided in the film-forming container and being configured to hold a substrate ; a stage stopper configured to stop rising of the stage and, when in contact with the stage , partitioning a film-forming space S in which the film-forming process is performed and a transporting space in which transport of the substrate is performed; a peripheral stage deposition prevention member covering a peripheral portion of the stage ; and a stage stopper deposition prevention member provided on the stage stopper 1. An atomic layer deposition apparatus comprising:a film-forming container in which a film-forming process is performed on a substrate;a vertically movable stage provided in the film-forming container and being configured to hold the substrate;a stage stopper configured to stop rising of the stage and, when in contact with the stage, partitioning a film-forming space in which the film-forming process is performed and a transporting space in which transport of the substrate is performed;a first stage deposition prevention member covering a peripheral portion of the stage; anda stage stopper deposition prevention member provided on the stage stopper.2. The atomic layer deposition apparatus according to claim 1 , a first stage stopper deposition prevention member covering an inner surface of a side wall of the film-forming container at a region above the stage stopper;', 'a second stage stopper deposition prevention member covering an upper surface of the stage stopper; and', 'a third stage stopper deposition prevention member covering a substrate-side side surface of the stage stopper., 'wherein the stage stopper deposition prevention member includes3. The atomic layer deposition apparatus according to claim 2 ,wherein the first, second and third stage stopper deposition prevention members are integrally formed with one another.4 ...

Device for atomic layer deposition

A device for atomic layer deposition includes: an injector installed to an opening of a film deposition chamber; and an injector adhesion preventive member installed by insertion into the opening, wherein the injector includes an injector raw material gas supply path, an injector reactant gas supply path, and an injector inert gas supply path, the respective paths being partitioned from each other, the injector adhesion preventive member includes an adhesion preventive member raw material gas supply path, an adhesion preventive member reactant gas supply path, and an adhesion preventive member inert gas supply path, the respective paths being partitioned from each other, and the adhesion preventive member inert gas supply path is provided such that the inert gas flows in a clearance between an outer peripheral side of the injector adhesion preventive member and an inner peripheral side of the opening.

Apparatus for atomic layer deposition and exhaust unit for apparatus for atomic layer deposition

An apparatus for atomic layer deposition includes a film deposition chamber, a tubular exhaust pipe connecting section mounted to an outer side of an opening section provided in the film deposition chamber, and a tubular exhaust adhesion preventive member located inside the film deposition chamber and inserted into and mounted on the opening section. The exhaust pipe connecting section is provided with an inert-gas supply passage and an inert-gas supply port, both in the connecting section. The exhaust adhesion preventive member is provided with an inert-gas supply passage formed of a gap between each of an inner peripheral surface of the opening section and an inner wall of the film deposition chamber around the opening section, and the adhesion preventive member, and an inert-gas discharge port provided in the inert-gas supply passage, and from which the inert gas flows out into the film deposition chamber.

Device for atomic layer deposition

A device for atomic layer deposition includes: a film deposition chamber; a stage installed inside the film deposition chamber; a susceptor that holds, on the stage, a substrate; a mask disposed on the substrate, the mask being sized to encompass the substrate; a mask pin that supports the mask; and a mask pin hole bored through the stage and the susceptor vertically, and allows the mask pin to be inserted in a vertically movable manner, wherein the susceptor has a susceptor body having a holding surface of the substrate, and a susceptor peripheral edge located around the susceptor body and having a height lower than the holding surface, the mask pin hole is opened in the susceptor peripheral edge, and in the susceptor peripheral edge, an inert gas supply port that releases gas upward is provided around the holding surface in a surrounding area of the mask.

Method and apparatus for growing plasma atomic layer

Oxygen gas, for example, is introduced into a film forming chamber, and high-frequency power is supplied to a plurality of monopole antennas arranged above a silicon substrate (101) in the film forming chamber to generate a plasma of the introduced oxygen gas, thereby supplying atomic oxygen (123) onto the surface of an aminosilane molecular layer (102). This plasma generation is performed for about 1 sec. With this operation, the adsorption layer (102) adsorbed onto the surface of the silicon substrate (101) is oxidized, thereby forming a silicon oxide layer (112) corresponding to one atomic layer of silicon on the surface of the silicon substrate (101).

Atomic layer growing apparatus and thin film forming method

An antenna array for generating plasma by using an oxide gas and a substrate stage for placing a substrate are arranged in a film forming container. An antenna element is provided by coating a bar-like antenna main body with a dielectric material, and the antenna array is configured by arranging a plurality of antenna elements in parallel to each other. Furthermore, the antenna array is arranged in a space in the upstream in a gas flow direction of the oxide gas supplied to the substrate stage from a supply port formed on the side wall of the film forming container, compared with a position where the substrate is placed on the substrate stage.

原子層沈積裝置及原子層沈積方法

本發明提供一種在基板的整個區域內均勻地控制膜厚的原子層沈積裝置。本發明的原子層沈積裝置是在基板上形成薄膜，原子層沈積裝置包括：成膜容器，在內部配置有基板，並且相互隔開間隔且與基板的形成薄膜的面平行地排列設置有多個排氣口，多個排氣口用於排出內部的氣體；原料氣體供給部，將薄膜的原料氣體供給至成膜容器內；反應氣體供給部，將反應氣體供給至成膜容器內，反應氣體用於與吸附於基板上的原料氣體的成分進行反應而形成薄膜；排氣閥，與各排氣口連接；以及控制部，藉由對多個排氣閥進行控制而對來自各排氣口的排氣量進行控制。

Method of forming protection film for organic EL device, method of manufacturing display device and display device

A method of manufacturing a display device having an organic EL device includes the steps of: forming an organic EL device over a substrate; and forming a protection film so as to cover the organic EL device. The protection film is made of a laminated film of a first insulating film containing Si, a second insulating film containing Al and a third insulating film containing Si. The step of forming the protection film includes the steps of: forming the first insulating film by a plasma CVD method so as to cover the organic EL device; forming the second insulating film over the first insulating film by an ALD method; and forming the third insulating film over the second insulating film by a plasma CVD method.

Film-forming method, manufacturing method of electronic device, and plasma atomic layer deposition apparatus

In a film-forming technology using charged particles, a disturbance in film thickness distribution caused by leakage magnetic field is suppressed. A film-forming method embodies a technological idea of switching generation and stop of a magnetic field during a film-forming operation so as to stop the generation of the magnetic field during a period when plasma is generated and generate the magnetic field during a period when plasma is not generated.

Light absorbing agent, composition, optical member, and method of manufacturing light absorbing agent

Provided is a light absorbing agent that excels in miscibility with a resin, a method of manufacturing such a light absorbing agent, a composition that excels in dispersiveness of such a light absorbing agent, and an optical member that excels in visible light transmitting performance and near-infrared radiation blocking performance. The light absorbing agent contains a compound expressed by Formula (1) below and a copper ion.In the above, R1 is a group expressed by Formula (2) above, R10 is an alkylene group or arylene group that may have a substituent, R12 is an alkylene group or arylene group that may have a substituent, and the other symbols are as described in the specification.

Thin-film deposition system

薄膜形成裝置