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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 26073. Отображено 100.
12-01-2012 дата публикации

Heat dissipating material and semiconductor device using same

Номер: US20120007017A1

Disclosed is a heat dissipating material which is interposed between a heat-generating electronic component and a heat dissipating body. This heat dissipating material contains (A) 100 parts by weight of a silicone gel cured by an addition reaction having a penetration of not less than 100 (according to ASTM D 1403), and (B) 500-2000 parts by weight of a heat conductive filler. Also disclosed is a semiconductor device comprising a heat-generating electronic component and a heat dissipating body, wherein the heat dissipating material is interposed between the heat-generating electronic component and the heat dissipating body.

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02-02-2012 дата публикации

Power Semiconductor Module, Method for Producing a Power Semiconductor Module and a Housing Element for a Power Semiconductor Module

Номер: US20120025393A1
Принадлежит: INFINEON TECHNOLOGIES AG

A power semiconductor module includes a housing element into which one or more connecting lugs are inserted. Each connecting lug has a foot region on the topside of which one or more bonding connections can be produced. In order to fix the foot regions, press-on elements are provided, which press against the end of the connecting lug.

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16-02-2012 дата публикации

Thermal expansion suppressing member and anti-thermally-expansive member

Номер: US20120040196A1
Принадлежит: Canon Inc, KYOTO UNIVERSITY

Provided are a thermal expansion suppressing member having negative thermal expansion properties and a metal-based anti-thermally-expansive member having small thermal expansion. More specifically, provided are a thermal expansion suppressing member, including at least an oxide represented by the following general formula (1), and an anti-thermally-expansive member, including a metal having a positive linear expansion coefficient at 20° C., and a solid body including at least an oxide represented by the following general formula (1), the metal and solid being joined to each other: (Bi 1-x M x )NiO 3 (1) where M represents at least one metal selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and In; and x represents a numerical value of 0.02≦x≦0.15.

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23-02-2012 дата публикации

Metal-Ceramic Substrate

Номер: US20120045657A1
Принадлежит: CURAMIK ELECTRONICS GMBH

A metal/ceramic substrate made up of a multilayer, plate-shaped ceramic material and at least one metallization provided on a surface side of the ceramic material. The at least one metallization is bonded to the ceramic material by direct copper bonding or reactive brazing and the ceramic material is made of a base layer made of silicon nitride ceramic. The at least one metallization is formed from at least one intermediate layer of an oxidic ceramic applied to the at least one base layer.

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01-03-2012 дата публикации

Thermally conductive foam product

Номер: US20120048528A1
Принадлежит: Parker Hannifin Corp

A compressible, thermally conductive foam interface pad is adapted for emplacement between opposed heat transfer surfaces in an electronic device. One heat transfer surface can be part of a heat-generating component of the device, while the other heat transfer surface can be part of a heat sink or a circuit board. An assembly including the foam interface pad and the opposed electronic components is also provided.

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01-03-2012 дата публикации

Flexible-to-rigid tubing

Номер: US20120050994A1
Принадлежит: International Business Machines Corp

A flexible-to-rigid tube is flexible when routed and is then rigidized to increase burst strength. According to the preferred embodiments of the present invention, the flexible-to-rigid tube is included in a cooling plate assembly for transferring heat from electronic components mounted on a circuit board. In one embodiment, the flexible-to-rigid tube (while in a flexible state) includes a polydimethylsiloxane (PDMS) or other silicone containing pendant or terminal epoxy, vinyl and/or acrylate functional groups and an initiator (e.g., a sulfonium salt photoinitiator, a free radical photoinitiator, or a thermal initiator). In another embodiment, triallyl isocyanurate (TAIC) and an initiator are incorporated into a conventional PVC-based tubing material. The flexible-to-rigid tube changes from the flexible state to a rigid state via formation of a cross-linked network upon exposure to actinic radiation or heat.

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12-04-2012 дата публикации

Heat spreader with mechanically secured heat coupling element

Номер: US20120085527A1
Автор: Konrad Pfaffinger
Принадлежит: Congatec GmbH

A heat spreader for dissipating heat generated by at least one heat-generating power semiconductor device. Such a heat spreader comprises a base plate ( 11 ) which is connectable in a heat-conducting manner to the at least one power semiconductor device ( 2 ), and at least one heat coupling element ( 4 ) which is connected in a heat conducting manner to the at least one power semiconductor device ( 2 ) on the one hand and to the base plate ( 11 ) on the other hand and comprises at least one elastic layer ( 5 ). The heat coupling element ( 4 ) comprises at least one holding element for mechanically fixing the heat coupling element ( 4 ) relative to a plane defined by the base plate ( 11 ).

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03-05-2012 дата публикации

Semiconductor module having a semiconductor chip stack and method

Номер: US20120104592A1
Принадлежит: INFINEON TECHNOLOGIES AG

A semiconductor module having a semiconductor chip stack and a method for producing the same is disclosed. In one embodiment, a thermally conductive layer with anisotropically thermally conductive particles is arranged between the semiconductor chips. The anisotropically thermally conductive particles have a lower thermal conductivity in a direction vertically with respect to the layer or the film than in a direction of the layer or the film.

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10-05-2012 дата публикации

Ceramic/metal composite structure and method of manufacturing the same

Номер: US20120114966A1
Принадлежит: National Taiwan University NTU

A ceramic/metal composite structure includes an aluminum oxide substrate, an interface bonding layer and a copper sheet. The interface bonding layer is disposed on the aluminum oxide substrate. The copper sheet is disposed on the interface bonding layer. The interface bonding layer bonds the aluminum oxide substrate to the copper sheet. Some pores are formed near or in the interface bonding layer. A porosity of the interface bonding layer is substantially smaller than or equal to 25%. A method of manufacturing the ceramic/metal composite structure is also provided.

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24-05-2012 дата публикации

Use of Ionomeric Silicone Thermoplastic Elastomers in Electronic Devices

Номер: US20120125436A1
Принадлежит: Individual

This invention relates to the use of a thermoplastic elastomer comprising at least one silicone ionomer in the formation of electronic devices.

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24-05-2012 дата публикации

Resin composition, multilayer body containing the same, semiconductor device, and film

Номер: US20120126393A1
Автор: Kenji Iida
Принадлежит: Mitsui Chemicals Inc

Disclosed is a resin composition which has high heat dissipation properties and high electrical insulation properties at the same time, while having low-temperature bondability to a conductor circuit or the like. The resin composition contains (A) a thermoplastic polyimide resin having a glass transition temperature of 160 DEG C or less and (B) an inorganic filler. The aspect ratio, that is the value of length/thickness, of the inorganic filler (B) is 9 or more, and the content of the inorganic filler (B) is 40-70 weight % relative to the total weight of the resin composition. The resin composition has a melt viscoelasticity of 10-300 MPa (inclusive) at 170 DEG C.

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24-05-2012 дата публикации

Phase change energy storage in ceramic nanotube composites

Номер: US20120128869A1
Автор: Seth Adrian Miller
Принадлежит: EMPIRE TECHNOLOGY DEVELOPMENT LLC

The present disclosure generally relates to methods and systems for forming phase change material composites and to the thus formed phase change material composites. In some examples, a method for forming a phase change material (PCM) composite may include dispersing nanowire material in a nonpolar solvent to form a nanowire-solvent dispersion, adding a PCM to the nanowire-solvent dispersion to form a nanowire-solvent-PCM dispersion, heating the nanowire-solvent-PCM dispersion, and removing the solvent.

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07-06-2012 дата публикации

Semiconductor device and method of manufacturing the same

Номер: US20120138946A1
Автор: Masao Kikuchi, Osamu Usui
Принадлежит: Mitsubishi Electric Corp

A semiconductor device includes a cooler having a main surface constructed of a metal base, joined layers fixed on the metal base through joining layers, insulating layers fixed on the joined layers and which contain an organic resin as a base material, metal layers provided on the insulating layers, and semiconductor elements provided on the metal layers. A stacked structure with the joined layers, the insulating layers, and the metal layers is divided into parts containing one or the plurality of semiconductor elements, and is fixed through the joining layers on the metal base.

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28-06-2012 дата публикации

Metal substrate/metal impregnated carbon composite material structure and method for manufacturing said structure

Номер: US20120164468A1
Автор: Noriaki Kawamura
Принадлежит: TotanKako Co Ltd

Provided are a heat releasing material for an electronic device being manufactured by the junction of a metal impregnated carbon composite material on a copper or aluminum substrate with reduced warpage; and a method for manufacturing the heat releasing material. A metal substrate/metal impregnated carbon composite material structure, characterized in that it comprises a metal substrate comprising a metal sheet, plate or block and, being joined on the metal substrate via a brazing material, a metal impregnated carbon composite material having a thickness of 0.1 mm to 2 mm; and a method for manufacturing the metal substrate/metal impregnated carbon composite material structure, characterized in that it comprises a step wherein a brazing material is caused to be present between the metal substrate and the metal impregnated carbon composite material, and they are kept at a temperature of 500° C. or higher and under a pressure of 0.2 MPa or more and then cooled.

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05-07-2012 дата публикации

Semiconductor package and method of fabricating the same

Номер: US20120168919A1
Автор: Joo-yang Eom, Joon-Seo Son
Принадлежит: Individual

A semiconductor package and a method of manufacturing the same, and more particularly, to a package of a power module semiconductor and a method of manufacturing the same. The semiconductor package includes a substrate including a plurality of conductive patterns spaced apart from one another; a plurality of semiconductor chips disposed on the conductive patterns; a connecting member for electrically connecting the conductive patterns to each other, for electrically connecting the semiconductor chips to each other, or for electrically connecting the conductive pattern and the semiconductor chip; and a sealing member for covering the substrate, the semiconductor chips, and the connecting member, wherein a lower surface of the substrate and an upper surface of the connecting member are exposed to the outside by the sealing member.

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02-08-2012 дата публикации

Porous Thermoplastic Foams as Heat Transfer Materials

Номер: US20120195004A1
Автор: Dustin M. Miller
Принадлежит: UNIVERSITY OF WASHINGTON

Interconnected, open-celled porous or microporous polymeric foams are used for the preparation of heat transfer devices. The use of such porous polymeric foams can generate a turbulent flow within a heat exchanging liquid, thus enabling increased heat transfer to and from the fluid. The present disclosure provides devices having a heat transfer element containing a heat exchange region wherein a heat exchange fluid can be circulated through a porous polymeric foam; and method for making and using such devices.

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30-08-2012 дата публикации

Semiconductor apparatus, method for manufacturing the same and electric device

Номер: US20120217660A1
Принадлежит: Fujitsu Ltd

A semiconductor apparatus includes: a semiconductor device including a first electrode; a substrate including a second electrode and a recess; and a heat-dissipating adhesive material to set the semiconductor device in the recess so as to arrange the first electrode close to the second electrode, wherein the first electrode is coupled to the second electrode and the heat-dissipating adhesive material covers a bottom surface and at least part of a side surface of the semiconductor device.

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30-08-2012 дата публикации

Heat radiation material, electronic device and method of manufacturing electronic device

Номер: US20120218713A1
Принадлежит: Fujitsu Ltd

The electronic device includes a heat generator 54, a heat radiator 58, and a heat radiation material 56 disposed between the heat generator 54 and the heat radiator 58 and including a plurality of linear structures 12 of carbon atoms and a filling layer 14 formed of a thermoplastic resin and disposed between the plurality of linear structures 12.

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27-09-2012 дата публикации

Diamond Particle Mololayer Heat Spreaders and Associated Methods

Номер: US20120241943A1
Автор: Chien-Min Sung
Принадлежит: Ritedia Corp

Thermally regulated semiconductor devices having reduced thermally induced defects are provided, including associated methods. Such a device can include a heat spreader having a monolayer of diamond particles within a thin metal matrix and a semiconductor material thermally coupled to the heat spreader. In one aspect, the coefficient of thermal expansion difference between the heat spreader and the semiconductor material is less than or equal to about 50%.

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04-10-2012 дата публикации

Heat conduction for chip stacks and 3-d circuits

Номер: US20120248627A1
Принадлежит: INTERSIL AMERICAS LLC

A semiconductor device assembly and method can include a single semiconductor layer or stacked semiconductor layers, for example semiconductor wafers or wafer sections (semiconductor dice). On each semiconductor layer, a diamond layer formed therethrough can aid in the routing and dissipation of heat. The diamond layer can include a first portion on the back of the semiconductor layer, and one or more second portions which extend vertically into the semiconductor layer, for example completely through the semiconductor layer. Thermal contact can then be made to the diamond layer to conduct heat away from the one or more semiconductor layers. A conductive via can be formed through the diamond layers to provide signal routing and heat dissipation capabilities.

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01-11-2012 дата публикации

Devices including composite thermal capacitors

Номер: US20120273920A1
Принадлежит: Georgia Tech Research Corp

Embodiments of the present disclosure include devices or systems that include a composite thermal capacitor disposed in thermal communication with a hot spot of the device, methods of dissipating thermal energy in a device or system, and the like.

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13-12-2012 дата публикации

Semiconductor device

Номер: US20120313252A1
Принадлежит: Mitsubishi Electric Corp

A semiconductor device includes a base plate having one main surface joined to an insulating substrate on which a semiconductor chip and the like are mounted and a transfer mold resin which is so provided as to cover the one main surface of the base plate, the insulating substrate, the semiconductor chip, and the like and expose the other main surface of the base plate. The coefficient of linear expansion of the base plate is lower than that of copper and the coefficient of linear expansion of the transfer mold resin is not higher than 16 ppm/° C. The transfer mold resin has such scooped shapes as to expose opposed short-side centers and the vicinity of the base plate, respectively. The base plate has mounting holes in portions exposed by the scooped shapes of the transfer mold resin.

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20-12-2012 дата публикации

Semiconductor module manufacturing method, semiconductor module, and manufacturing device

Номер: US20120319253A1
Автор: HIROKI Mizuno
Принадлежит: Toyota Motor Corp

In the disclosed method for manufacturing a semiconductor module, a metal layer and a cooler, which have different coefficients of thermal expansion from each other, are joined into a single unit via an insulating resin sheet. A work, comprising a semiconductor element placed on the metal layer with solder interposed therebetween, is fed into a reflow furnace. The work, in that state, is heated in the reflow furnace, thereby mounting the semiconductor element to the metal layer. The heating is carried out such that the temperature of the cooler and the temperature of the metal layer differ by an amount that make the cooler and the metal layer undergo the same amount of thermal expansion as each other.

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27-12-2012 дата публикации

Graphene nanoplatelet metal matrix

Номер: US20120324703A1
Принадлежит: Boeing Co

A metal matrix composite is disclosed that includes graphene nanoplatelets dispersed in a metal matrix. The composite provides for improved thermal conductivity. The composite may be formed into heat spreaders or other thermal management devices to provide improved cooling to electronic and electrical equipment and semiconductor devices.

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27-12-2012 дата публикации

Heat dissipating structure and manufacture thereof

Номер: US20120325454A1
Принадлежит: Fujitsu Ltd

A heat dissipating structure includes a heat source; a heat dissipating part disposed to oppose to the heat source; a concave portion formed in at least one of opposing surfaces of the heat source and the heat dissipating part; and a heat conducting structure comprising a filler layer of thermoplastic material disposed between the heat source and the heat dissipating part and contacting with the opposing surfaces of the heat source and the heat dissipating part, and an assembly of carbon nanotubes that are distributed in the thermoplastic material, oriented perpendicularly to the surfaces of the filler layer, contacting, at both ends, with the opposing surfaces of the heat source and the heat dissipating part, and limited its distribution in the opposing surfaces by the concave portion.

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03-01-2013 дата публикации

Laminate and manufacturing method for same

Номер: US20130004791A1
Принадлежит: Showa Denko KK

A layered material 1 includes two metal sheets 2,3 and one ceramic sheet 4 , wherein the metal sheets 2,3 and the ceramic sheet 4 are stacked so that the ceramic sheet 4 is disposed between the two metal sheets 2,3 , and then bonded together through spark plasma sintering. The difference in melting temperature between the metal sheets 2 and 3 is 140° C. or less. The layered material 1 is produced by stacking two metallic sheets 2,3 that have a difference in melting temperature of 140° C. or less and the ceramic sheet 4 so that the ceramic sheet 4 is placed between the both metal sheets 2,3 , then disposing the stacked structure of the metal sheet 2,3 and the ceramic sheet 4 between a pair of electrodes in a spark plasma sintering device, and bonding the metal sheets 2,3 and the ceramic sheet 4 by applying a pulse current between the electrodes while maintaining the conduction between the electrodes.

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24-01-2013 дата публикации

System and Method for Packaging of High-Voltage Semiconductor Devices

Номер: US20130020672A1
Принадлежит: US Department of Army

A method and an electronic device structure comprising at least one access lead to adapted to be connected to an electrical circuit; at least one substrate region; at least one semiconductor die positioned on the substrate; the at least one semiconductor die being operatively connected to the at least one access lead; a dielectric region extending below the at least one semiconductor die; the dielectric region being formed by creating a cavity in the at least one substrate region; whereby the dielectric region operates to reduce electric field stresses produced by the at least one semiconductor die to thereby reduce the possibility of material failure and voltage breakdown. The method of making an electronic device structure comprises providing at least one substrate region; providing at least one semiconductor die located on the at least one substrate region; removing a portion of the at least one substrate region to provide a dielectric region within the substrate extending below the at least one semiconductor die; whereby the dielectric region within the at least one substrate region operates to reduce electric field stresses produced by the at least one semiconductor die to thereby reduce the possibility of material failure and voltage breakdown.

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24-01-2013 дата публикации

Power Semiconductor Module with Asymmetrical Lead Spacing

Номер: US20130021759A1
Принадлежит: IXYS Semiconductor GmbH

A power semiconductor has power terminals arranged in a row at one side of the housing, with control terminals arranged in a row at the other side of the housing. The spacing between adjacent power terminals is greater than the spacing between adjacent control terminals.

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24-01-2013 дата публикации

Chip-on-film packages and device assemblies including the same

Номер: US20130021768A1
Принадлежит: SAMSUNG ELECTRONICS CO LTD

Chip-on-film packages are provided. A chip-on-film package includes a film substrate having a first surface and a second surface opposite to each other, a semiconductor chip on the first surface, and a thermal deformation member adjacent to the second surface. The thermal deformation member has a construction that causes its shape to transform according to a temperature. Related devices and device assembles are also provided.

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14-02-2013 дата публикации

Heat dissipation device and semiconductor device

Номер: US20130039010A1
Принадлежит: Kyocera Corp, Toyota Industries Corp

Disclosed is a heat dissipation device which is reduced in the number of components, while having sufficient insulating function and cooling function with respect to an object to be cooled. The heat dissipation device includes a base that is formed from a ceramic and a refrigerant channel for circulating a refrigerant within the base. The base is formed by sintering a stacked body in which a plurality of ceramic sheets are stacked. The plurality of ceramic sheets include the ceramic sheet which is provided with a plurality of slits that constitute the refrigerant channel, and the ceramic sheets which are provided with communication paths that communicate the refrigerant channel and outside units with each other. A semiconductor device is configured by bonding a metal plate, on which a semiconductor element is mounted, to the heat dissipation device.

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21-02-2013 дата публикации

Method for manufacturing semiconductor device and semiconductor device

Номер: US20130043594A1
Принадлежит: Toshiba Corp

According to one embodiment, between the mounting substrate and the semiconductor chip, there is a joint support layer including a metal or its alloy selected from the group of Cu, Al, Ag, Ni, Cr, Zr and Ti and a melt layer laminated across the joint support layer, and formed of a metal selected from the group of Sn, Zn and In or of an alloy of at least two metals selected from the same metals. The process of joining the mounting substrate and the semiconductor chip includes intervening a joining layer which is formed, at least for its outermost layer, by the melt layer, maintaining the temperature to be higher than the melting point of the melt layer, then forming an alloy layer which has a higher melting point than the melt layer by liquid phase diffusion.

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28-02-2013 дата публикации

Heat dissipation device and method of manufacturing same

Номер: US20130048253A1
Автор: Hsiu-Wei Yang
Принадлежит: Asia Vital Components Co Ltd

A heat dissipation device includes a heat dissipation element and a ceramic main body. The heat dissipation element includes a heat transfer section and a heat dissipation section located on one side of the heat transfer section; and the ceramic main body is directly connected to another side of the heat transfer section opposite to the heat dissipation section by way of welding or a direct bonding copper process, so as to overcome the problem of crack at an interface between the heat dissipation device and a heat source due to thermal fatigue. A method of manufacturing the above-described heat dissipation device is also disclosed.

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28-02-2013 дата публикации

Power Module and Manufacturing Method Thereof

Номер: US20130049201A1
Принадлежит: HITACHI LTD

A power module includes a substrate having a surface on which a plurality of wiring patterns are formed, a semiconductor device mounted on the substrate and electrically connected to a part of the plurality of wiring patterns, and a terminal portion with a lead electrically connected to the other part of the plurality of wiring patterns, and is configured that the lead of the terminal portion is formed by laminating a plurality of metal members which contain a material substantially the same as or softer than the material for forming the other part of wiring patterns, and the material of the plurality of metal members, which is the same as or softer than the material for forming the other part of wiring patterns is electrically connected to the other part of wiring patterns through ultrasonic bonding.

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07-03-2013 дата публикации

Thermally Enhanced Structure for Multi-Chip Device

Номер: US20130056871A1

A multi-chip semiconductor device comprises a thermally enhanced structure, a first semiconductor chip, a second semiconductor chip, an encapsulation layer formed on top of the first semiconductor chip and the second semiconductor chip. The multi-chip semiconductor device further comprises a plurality of thermal vias formed in the encapsulation layer. The thermally enhanced structure comprises a heat sink block attached to a first semiconductor die. The heat sink block may further comprise a variety of thermal vias and thermal openings. By employing the thermal enhanced structure, the thermal performance of the multi-chip semiconductor device can be improved.

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14-03-2013 дата публикации

Semiconductor device including cladded base plate

Номер: US20130062750A1
Принадлежит: INFINEON TECHNOLOGIES AG

A semiconductor device includes a semiconductor chip coupled to a substrate and a base plate coupled to the substrate. The base plate includes a first metal layer clad to a second metal layer. The second metal layer is deformed to provide a pin-fin or fin cooling structure.

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04-04-2013 дата публикации

Power semiconductor arrangement and method for producing a power semiconductor arrangement

Номер: US20130082387A1
Принадлежит: INFINEON TECHNOLOGIES AG

In a method for producing a power semiconductor arrangement, an insulation carrier with a top side, a metallization, and a contact pin with a first end are provided. The metallization is attached to the top side and a target section of the metallization is determined. After the metallization is attached to the top side of the insulation carrier, the first end of the contact pin is pressed into the target section such that the first end is inserted in the target section. Thereby, an interference fit and an electrical connection are established between the first end of the contact pin and the target section of the metallization.

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18-04-2013 дата публикации

THERMAL EXPANSION-ENHANCED HEAT SINK FOR AN ELECTRONIC ASSEMBLY

Номер: US20130091693A1

A heat sink and method of fabrication are provided for removing heat from an electronic component(s). The heat sink includes a heat sink base and frame. The base has a first coefficient of thermal expansion (CTE), and includes a base surface configured to couple to the electronic component to facilitate removal of heat. The frame has a second CTE, and is configured to constrain the base surface in opposing relation to the electronic component, wherein the first CTE is greater than the second CTE. At least one of the heat sink base or frame is configured so that heating of the heat sink base results in a compressive force at the base surface of the heat sink base towards the electronic component that facilitates heat transfer from the electronic component. A thermal interface material is disposed between the base surface and the electronic component. 1. A method of fabricating a thermal expansion-enhanced heat sink comprising:providing a heat sink base comprising a base surface configured to couple to a surface of a heat-generating electronic component to facilitate removal of heat from the heat-generating electronic component, the heat sink base having a first coefficient of thermal expansion; andproviding a frame configured to couple to the heat-generating electronic component and constrain the base surface of the heat sink base in opposing relation to the surface of the heat-generating electronic component, the frame having a second coefficient of thermal expansion, wherein the first coefficient of thermal expansion of the heat sink base is greater than the second coefficient of thermal expansion of the frame, and wherein at least one of the heat sink base or the frame is configured so that heating of the heat sink base expands the heat sink base relative to the frame and results in a force component at the base surface of the heat sink base towards the surface of the heat-generating electronic component that facilitates heat transfer from the surface of the heat- ...

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18-04-2013 дата публикации

Molded Power Supply System Having a Thermally Insulated Component

Номер: US20130094169A1
Принадлежит: Texas Instruments Inc

A molded system ( 100 ) has a plurality of components ( 110, 120, 130 ) attached to a carrier ( 101 ), one of the components being an object ( 110 ) of irregular thermal capacitance. For example, carrier ( 101 ) may be a QFN/SON-type leadframe and object ( 110 ) an inductor of high thermal capacitance. The surface of the object is sealed with a hardened polymeric layer ( 220 ) of high thermal resistance, whereby the layer ( 220 ) thermally insulates the object ( 110 ) and inhibits the transport of thermal energy between the object and the system. System ( 100 ) has molding compound ( 140 ) encapsulating the carrier and the attached components including the object ( 110 ) and the polymeric layer sealing the object's surface.

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16-05-2013 дата публикации

DEVICE STRUCTURE INCLUDING HIGH-THERMAL-CONDUCTIVITY SUBSTRATE

Номер: US20130119404A1
Принадлежит: TRIQUINT SEMICONDUCTOR, INC.

Methods and apparatuses for forming a device structure including a high-thermal-conductivity substrate are disclosed herein. A method forming such a device structure may comprise forming an active layer over a first substrate in a manner such that a frontside of the active layer faces the first substrate and a backside of the active layer faces away from the first substrate, forming a second substrate over the backside of the active layer, and removing the first substrate to expose the frontside of the active layer. Other embodiments are described and claimed. 1. A method comprising: a first substrate;', 'an etch stop layer including aluminum gallium arsenide or indium gallium phosphide formed over the first substrate;', 'an inverted epitaxial structure formed over etch stop layer in a manner such that the etch stop layer is between the first substrate and the inverted epitaxial structure and such that a frontside of the inverted epitaxial structure faces the etch stop layer and a backside of the inverted epitaxial structure faces away from the etch stop layer; and', 'a bonding layer formed over the backside of the inverted epitaxial structure;, 'providing an apparatus includingafter providing the apparatus, forming a second substrate over the bonding layer such that the bonding layer is between the backside and the second substrate; andafter said forming the second substrate, removing the first substrate and the etch stop layer to expose the frontside of the inverted epitaxial structure.2. The method of claim 1 , wherein said forming the second substrate comprises forming a high thermal conductivity material over the oxide layer.3. The method of claim 2 , wherein the high thermal conductivity material comprises a material selected from polycrystalline silicon carbide claim 2 , diamond claim 2 , or aluminum nitride.4. The method of claim 1 , wherein said forming of the second substrate over the oxide layer comprises wafer bonding the second substrate to the oxide ...

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16-05-2013 дата публикации

Semiconductor die assemblies with enhanced thermal management, semiconductor devices including same and related methods

Номер: US20130119527A1
Автор: JIAN Li, Shijian Luo, XIAO Li
Принадлежит: Micron Technology Inc

A semiconductor die assembly comprises a plurality of semiconductor dice in a stack. Another semiconductor die is adjacent to the stack and has a region, which may comprise a relatively higher power density region, extends peripherally beyond the stack. Conductive elements extend between and electrically interconnect integrated circuits of semiconductor dice in the stack and of the other semiconductor die. Thermal pillars are interposed between semiconductor dice of the stack, and a heat dissipation structure, such as a lid, is in contact with an uppermost die of the stack and the high power density region of the other semiconductor die. Other die assemblies, semiconductor devices and methods of managing heat transfer within a semiconductor die assembly are also disclosed.

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16-05-2013 дата публикации

Thermally enhanced packaging structure

Номер: US20130119530A1
Принадлежит: CHIPMOS TECHNOLOGIES INC

A thermally enhanced packaging structure includes a chip carrier; a high power chip disposed on the chip carrier; a molding compound covering the high power chip; a heat dissipating layer disposed on the molding compound, wherein the heat dissipating layer comprises a plurality of carbon nanocapsules (CNCs); and a non-fin type heat dissipating device, disposed either on the heat dissipating layer or between the molding compound and the heat dissipating layer. The molding compound can also comprise a plurality of CNCs.

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13-06-2013 дата публикации

Integrated Circuit and Method of Forming an Integrated Circuit

Номер: US20130147047A1
Принадлежит: INFINEON TECHNOLOGIES AG

An integrated circuit includes a base element and a copper element over the base element, the copper element having a thickness of at least 5 μm and a ratio of average grain size to thickness of less than 0.7.

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11-07-2013 дата публикации

Discrete power transistor package having solderless dbc to leadframe attach

Номер: US20130175704A1
Принадлежит: IXYS LLC

A packaged power transistor device includes a Direct-Bonded Copper (“DBC”) substrate. Contact pads of a first lead are attached with solderless welds to a metal layer of the DBC substrate. In a first example, the solderless welds are ultrasonic welds. In a second example, the solderless welds are laser welds. A single power transistor realized on a single semiconductor die is attached to the DBC substrate. In one example, a first bond pad of the die is wire bonded to a second lead, and a second bond pad of the die is wire bonded to a third lead. The die, the wire bonds, and the metal layer of the DBC substrate are covered with an amount of plastic encapsulant. Lead trimming is performed to separate the first, second and third leads from the remainder of a leadframe, the result being the packaged power transistor device.

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18-07-2013 дата публикации

Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates using intermediate nucleating layer

Номер: US20130183798A1
Принадлежит: Individual

Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.

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25-07-2013 дата публикации

DEVICES INCLUDING COMPOSITE THERMAL CAPACITORS

Номер: US20130187262A1
Принадлежит: GEORGIA TECH RESEARCH CORPORATION

Embodiments of the present disclosure include devices or systems that include a composite thermal capacitor disposed in thermal communication with a hot spot of the device, methods of dissipating thermal energy in a device or system, and the like. 1. A device , comprising:an electronic device having at least one hot spot, anda composite thermal capacitor disposed in thermal communication with the hot spot of the electronic device, wherein the composite thermal capacitor includes a phase change material, wherein the heat from the hot spot is stored by the phase change material.2. The device of claim 1 , wherein the phase change material is selected from the group consisting of: solid-to-solid claim 1 , a solid-to-liquid claim 1 , a solid-to-gas claim 1 , and a liquid-to-gas claim 1 , phase change material.3. The device of claim 1 , wherein the composite thermal capacitor includes the phase change material imbedded into a matrix of a high thermal conductivity material.4. The device of claim 3 , wherein the high thermal conductivity material is selected from the group consisting of: copper claim 3 , silver claim 3 , gold claim 3 , aluminum claim 3 , graphitzed carbon claim 3 , silicon claim 3 , carbon nanotubes claim 3 , diamond claim 3 , graphene claim 3 , and a combination thereof.5. The device of claim 3 , wherein the ratio of the phase change material to the high thermal conductivity material is about 1:100 to 1:1.6. The device of claim 1 , wherein the electronic device is selected from the group consisting of: a two-dimensional semiconductor chip stack claim 1 , a three-dimensional semiconductor chip stack claim 1 , a multi-core semiconductor chip claim 1 , a memory device claim 1 , Application Specific Integrated Circuits (ASICs) claim 1 , System-on-a-Chip (SoC) claim 1 , a microelectronic chip claim 1 , a optoelectronic chip claim 1 , a hybrid optoelectronic/microelectronic chip claim 1 , a memory device claim 1 , analog or radio frequency (RF) micro devices ...

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25-07-2013 дата публикации

MULTILAYER RESIN SHEET AND PROCESS FOR PRODUCTION THEREOF, RESIN SHEET LAMINATE AND PROCESS FOR PRODUCTION THEREOF, CURED MULTILAYER RESIN SHEET, METAL-FOIL-CLADDED MULTILAYER RESIN SHEET, AND SEMICONDUCTOR DEVICE

Номер: US20130189514A1
Принадлежит:

A multilayer resin sheet including: a resin layer that includes an epoxy resin monomer, a curing agent, and a filler; and an adhesive layer positioned on at least one face of the resin layer, the filler having peaks in ranges of from 0.01 μm to less than 1 μm, from 1 μm to less than 10 μm, and from 10 μm to 100 μm, respectively, in terms of particle size distribution as measured by laser diffractometry, and the filler having a particle size of from 10 μm to 100 μm including a boron nitride filler. 1. A multilayer resin sheet comprising:a resin layer that includes an epoxy resin monomer, a curing agent, and a filler; andan adhesive layer positioned on at least one face of the resin layer,the filler having peaks in ranges of from 0.01 μm to less than 1 μm, from 1 μm to less than 10 μm, and from 10 μm to 100 μm, respectively, in terms of particle size distribution as measured by laser diffractometry, andthe filler having a particle size of from 10 μm to 100 μm including a boron nitride filler.2. The multilayer resin sheet according to claim 1 , wherein at least a part of the filler having a particle size of from 10 μm to 100 μm is embedded in the adhesive layer.3. The multilayer resin sheet according to claim 1 , wherein at least one of the epoxy resin monomer is an epoxy resin monomer having a mesogenic group claim 1 , and at least one of the curing agent is a novolac resin.4. The multilayer resin sheet according to claim 1 , wherein the adhesive layer includes at least one selected from the group consisting of a modified polyimide resin claim 1 , a modified polyamide-imide resin and an epoxy resin.5. A multilayer resin sheet comprising a resin layer and an adhesive layer positioned on at least one face of the resin layer claim 1 , the resin layer including an epoxy resin monomer claim 1 , a curing agent claim 1 , a first filler having a volume average particle size of from 0.01 μm to less than 1 μm claim 1 , a second filler having a volume average particle size of ...

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22-08-2013 дата публикации

Composite heat-dissipation substrate and manufacturing method of the same

Номер: US20130213629A1

The present disclosure provides a composite heat-dissipation substrate and a method of manufacturing the same. The composite heat-dissipation substrate includes a first ceramic layer having insulating properties, a second porous ceramic layer and a metal layer, wherein the first ceramic layer and the second ceramic layer are continuously connected to each other so as not to form an interface therebetween, and the metal layer is infiltrated into plural pores of the second ceramic layer to be coupled to the ceramic layers, whereby interfacial coupling force between the ceramic layers and the metal layer is very high, thereby providing significantly improved heat dissipation characteristics.

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22-08-2013 дата публикации

Embedded Electrical Component Surface Interconnect

Номер: US20130215583A1
Автор: Michael B. Vincent
Принадлежит: FREESCALE SEMICONDUCTOR INC

An electrical component package is disclosed comprising: an electrical component having an embedded surface, a structure attached to the electrical component opposite the embedded surface, a conductive adhesive directly attached to the embedded surface, where the conductive adhesive is shaped to taper away from the embedded surface, and an encapsulation material covering the conductive adhesive and the electrical component. In various embodiments, the tapered conductive adhesive facilitates the securing of the conductive adhesive to the electrical component by the encapsulation material. Also disclosed are various methods of forming an electrical component package having a single interface conductive interconnection on the embedded surface. The conductive interconnection is configured to maintain an interconnection while under stress forces. Further disclosed in a method of applied a conductive adhesive that enables design flexibility regarding the shape and depth of the conductive interconnection.

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22-08-2013 дата публикации

Aluminum alloy material and method of manufacturing aluminum alloy backboard

Номер: US20130216425A1
Принадлежит: Enraytek Optoelectronics Co Ltd

The present invention discloses an aluminum alloy material, which is made of raw material of aluminum alloy. The raw material of aluminum alloy consists of the following constituents by percentage of weight: graphene: 0.1%˜1%, carbon nano tube: 1%˜5%, the rest being Al. The aluminum alloy material of the present invention has a good performance of heat dissipation, the thermal conductivity is higher than 200 W/m. Meanwhile, the present invention further provides a method of manufacturing aluminum alloy backboard, in which method, the raw material of aluminum alloy is heated and melted in a heating furnace, afterwards, the raw material of aluminum alloy after melting is formed into an aluminum alloy backboard by die-casting, in this way, the utilization rate of material is increased and the manufacturing cost of the backboard is reduced.

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29-08-2013 дата публикации

Semiconductor Packages with Integrated Heat Spreaders

Номер: US20130221506A1
Принадлежит: Broadcom Corp

One implementation of present disclosure includes a semiconductor package stack. The semiconductor package stack includes an upper package coupled to a lower package by a plurality of solder balls. The semiconductor package stack also includes a lower active die situated in a lower package substrate in the lower package. The lower active die is thermally coupled to a heat spreader in the upper package by a thermal interface material. An upper active die is situated in an upper package substrate in the upper package, the upper package substrate being situated over the heat spreader. The thermal interface material can include an array of aligned carbon nanotubes within a filler material. The heat spreader can include at least one layer of metal or metal alloy. Furthermore, the heat spreader can be connected to ground or a DC voltage source. The plurality of solder balls can be situated under the heat spreader.

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19-09-2013 дата публикации

CERAMIC HEAT SINK MATERIAL FOR PRESSURE CONTACT STRUCTURE, SEMICONDUCTOR MODULE USING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR MODULE

Номер: US20130241046A1
Автор: Miyashita Kimiya
Принадлежит:

The present invention provides a ceramic heat sink material for a pressure contact structure configured by providing a resin layer on a ceramic substrate, wherein the resin layer has durometer (Shore) hardness (A-type) of 70 or less, and an average value of gaps existing in an interface between the ceramic substrate and the resin layer is 3 μm or less. Further, it is preferable that the resin layer is formed by solidifying a thermosetting resin which is fluidized at a temperature of 60° C. Due to above structure, there can be obtained a ceramic heat sink and a semiconductor module using the heat sink having a good close-contacting property with respect to the pressing member. 1. A ceramic heat sink material for a pressure contact structure configured by providing a resin layer on a ceramic substrate , wherein the resin layer has durometer (Shore) hardness (A-type) of 70 or less , and an average value of gaps existing in an interface between the ceramic substrate and the resin layer is 3 μm or less.2. The ceramic heat sink material for the pressure contact structure according to claim 1 , wherein the resin layer is formed by solidifying a thermosetting resin which is fluidized at a temperature of 60° C.3. A ceramic heat sink material for a pressure contact structure configured by providing a resin layer on a ceramic substrate claim 1 , wherein the resin layer is formed by solidifying a thermosetting resin which is fluidized at a temperature of 60° C.4. The ceramic heat sink material for the pressure contact structure according to claim 1 , wherein the resin layer contains inorganic filler particles.5. The ceramic heat sink material for the pressure contact structure according to claim 1 , wherein the resin layer has durometer (Shore) hardness (A-type) of 10 or more.6. The ceramic heat sink material for the pressure contact structure according to claim 1 , wherein the ceramic substrate is any one of a silicon nitride substrate claim 1 , an aluminum oxide substrate ...

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19-09-2013 дата публикации

Semiconductor device and method for manufacturing the same

Номер: US20130244380A1
Принадлежит: Fuji Electric Co Ltd

An ultrasonic welding tool is used to bond end portions of an external connection terminal to circuit patterns of an insulating substrate, with a Vickers hardness not lower than 90. Bonding end portions are provided integrally with a bar in the external connection terminal. A bonding end portion located substantially in the lengthwise center of the bar is bonded first, then others are bonded alternately in order toward either end. Hardness of the bonding end portions is increased so that strength of the ultrasonic welding portions is increased, and displacement of the bonding end portion in either end from its regular position is suppressed to keep bonding strength high. Bonding strength of the ultrasonic welding portions between the external connection terminal and the circuit patterns of the insulating substrate can be increased so that long-term reliability can be secured in a semiconductor device.

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10-10-2013 дата публикации

Semiconductor unit

Номер: US20130264702A1
Принадлежит: Toyota Industries Corp

A semiconductor unit includes a cooler having a fluid flow space, an insulating substrate bonded to the cooler through a metal, a semiconductor device soldered to the insulating substrate, an intermediate member interposed between the insulating substrate and the fluid flow space and having a first surface where the insulating substrate is mounted, and a mold resin having a lower coefficient of liner expansion than the intermediate member. The insulating substrate, the semiconductor device and the cooler are molded by the mold resin. The intermediate member has a second surface that extends upward or downward relative to the first surface. The first surface is covered by the mold resin. The second surface is covered by a resin cover.

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17-10-2013 дата публикации

Double side cooling power semiconductor module and multi-stacked power semiconductor module package using the same

Номер: US20130270687A1
Принадлежит: Samsung Electro Mechanics Co Ltd

Disclosed herein is a double side cooling power semiconductor module including: a first cooler having a concave part formed in one surface thereof in a thickness direction; a first semiconductor chip mounted on the concave part of the first cooler; a second cooler having one surface and the other surface and formed on one surface of the first cooler so that one surface thereof contacts the first semiconductor chip; a circuit board formed on the other surface of the second cooler; a second semiconductor chip mounted on the circuit board; and a flexible substrate having a circuit layer electrically connecting the first and second semiconductor chips to each other.

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17-10-2013 дата публикации

Plasticized ceramic thermal dissipation module

Номер: US20130271921A1
Автор: Ni Chin Huan
Принадлежит: Individual

A plasticized ceramic thermal dissipation module comprises a heating electrical component, a cooling body, and a thermal conductive device. They are located orderly. The thermal conductive device is a substrate and the heating electrical component is arranged on the substrate, in which the cooling body is a plasticized ceramic and seamlessly integrated with the thermal conductive device together as a component (All-In-One). The present invention efficiently integrates electrical circuits (or package) board with cooling body together, may be able to simplify the assembling process during the late production stage, to decrease the thermal resister between the two components during assembling and efficiently enhances the thermal conductive performance, furthermore, the plasticized ceramic with high thermal conductive coefficient has excellent lateral thermal conductive ability to enhance the cooling performance, and be able to integrate with different types of circuits (or package) boards together to increase product's productivity and design flexibility.

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24-10-2013 дата публикации

Heat disperser with heat transmission, heat convection and heat radiation function

Номер: US20130277030A1
Автор: Robert Wang
Принадлежит: Ceramate Technical Co Ltd

A heat disperser with heat transmission, heat convection and heat radiation function includes a body made of a material able to easily conduct heat. The body is formed into a continuous S shape by repeated bending, making up plural heat dispersing sheets connected with plural heat dispersing walls, with two ends of each heat dispersing sheet connected with one end of two heat dispersing walls, with two ends of each heat dispersing wall connected with one end of two heat dispersing sheets. Then the heat disperser is combined with a heat producing element, whose heat is transmitted to the body. Then the body has a large area for heat dispersing into open air by means of heat transmission, heat convection and heat radiation synchronously.

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24-10-2013 дата публикации

Thermally conductive adhesive

Номер: US20130279118A1
Принадлежит: Dexerials Corp

A thermally conductive adhesive having: a thermosetting adhesive containing a curable component and a curing agent for the curable component, and a metal filler dispersed in the thermosetting adhesive uses a silver powder and a solder powder as the metal filler. The solder powder to be used has a melting temperature lower than the thermal curing temperature of the thermally conductive adhesive and produces a high-melting-point solder alloy having a melting point higher than the melting temperature of the solder powder when the solder powder is reacted with the silver powder under thermal curing conditions of the thermally conductive adhesive. A curing agent having flux activity to the metal filler is used as the curing agent.

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31-10-2013 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20130285235A1
Принадлежит:

A semiconductor device includes: a first heat spreader; a second heat spreader separated from the first heat spreader; a first semiconductor element on the first heat spreader and having a back face jointed to the first heat spreader; a second semiconductor element on the second heat spreader and having a back face jointed to the second heat spreader; a resin coating the first and second heat spreaders and the first and second semiconductor elements; and a reinforcing member provided across a region between the first and second heat spreaders in the resin, and having rigidity higher than rigidity of the resin. 1. A semiconductor device comprising:a first heat spreader;a second heat spreader separated from the first heat spreader;a first semiconductor element on the first heat spreader and having a back face jointed to the first heat spreader;a second semiconductor element on the second heat spreader and having a back face jointed to the second heat spreader;a resin coating the first and second heat spreaders and the first and second semiconductor elements; anda reinforcing member provided across a region between the first and second heat spreaders in the resin, and having rigidity higher than rigidity of the resin.2. The semiconductor device according to claim 1 , wherein the reinforcing member is provided above the first and second semiconductor elements without contacting to the first and second semiconductor elements.3. The semiconductor device according to claim 1 , further comprising an insulating layer provided on back faces of the first and second heat spreaders claim 1 , wherein the reinforcing member is a metal layer provided under the insulating layer and thicker than the insulating layer.4. A semiconductor device comprising:a first heat spreader;a second heat spreader separated from the first heat spreader;a first semiconductor element on the first heat spreader and having a back face jointed to the first heat spreader;a second semiconductor element on ...

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31-10-2013 дата публикации

Circuit device

Номер: US20130286616A1
Принадлежит: ON SEMICONDUCTOR TRADING LTD

A circuit device having superior voltage resistance is provided. A structure is achieved that omits the resin layer that is normally provided to the top surface of a circuit board. Specifically, a ceramic substrate ( 22 ) is disposed on the top surface of a circuit board ( 12 ) comprising a metal, and a transistor ( 34 ) such as an IGBT is mounted to the top surface of the ceramic substrate ( 22 ). As a result, the transistor ( 34 ) and the circuit board ( 12 ) are insulated from each other by the ceramic substrate ( 22 ). The ceramic substrate ( 22 ), which comprises an inorganic material, has an extremely high voltage resistance compared to the conventionally used insulating layer comprising resin, and so even if a high voltage on the order of 1000V is applied to the transistor ( 34 ), short circuiting between the transistor ( 34 ) and the circuit board ( 12 ) is prevented.

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07-11-2013 дата публикации

GRAPHITE FILLED POLYESTER COMPOSITIONS

Номер: US20130292603A1
Автор: Saga Yuji
Принадлежит: E I DU PONT DE NEMOURS AND COMPANY

Polyester compositions comprising: 1. A polyester composition comprising:a) 3 to 40 weight percent, preferably 3 to 30 weight percent, of at least one polyester, preferably polybutylene terephthalate, polytrimethylene terephthalate, polyethylene terephthalate, poly(ethylene 2,6-naphthoate), and poly(1,4-cyclohexyldimethylene terephthalate);b) 25 to 50 weight percent non-fibrous graphite, preferably a platy or particulate graphite;c) 10 to 40 weight percent inorganic filler selected from the group consisting of wollastonite, glass fibers, aramid fibers, ceramic fibers, potassium titanate whiskers, or combinations of them;d) 3 to 10 weight percent copolyether ester elastomer; the amount of a+b+c+d is 100 weight percent of the composition;', 'the amount of b+c is at least 50 weight percent of the composition', 'the weight ratio of copolyether ester elastomer to polyester is from 0.3 to 0.4; and', 'the composition has at least a 0.2 percent elongation, a thermal conductivity of at least 3 WmK, and a tensile strength of at least 25 MPa., 'wherein2. The polyester composition of claim 1 , wherein the amount of non-fibrous graphite is from 32 to 42 weight percent of the composition.3. The polyester composition of claim 1 , wherein the amount of copolyether ester elastomer is from 5 to 10 weight percent of the composition.4. The polyester composition of claim 1 , wherein the amount of inorganic filler is from 15 to 30 weight percent of the composition.5. The polyester composition of claim 1 , wherein the amount of non-fibrous graphite is from 32 to 42 weight percent of the composition claim 1 , the amount of copolyether ester elastomer is from 5 to 10 weight percent of the composition claim 1 , and the amount of inorganic filler is from 15 to 30 weight percent of the composition.6. The polyester composition of claim 2 , wherein the amount of copolyether ester elastomer is from 5 to 10 weight percent of the composition.7. The polyester composition of claim 2 , wherein the ...

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07-11-2013 дата публикации

Clad material for insulating substrates

Номер: US20130292816A1
Принадлежит: Showa Denko KK

A clad material 1 A for insulating substrates is provided with a Ni layer 4 made of Ni or a Ni alloy, a Ti layer 6 made of Ti or a Ti alloy and arranged on one side of the Ni layer, and a first Al layer 7 made of Al or an Al alloy and arranged on one side of the Ti layer 6 that is opposite to a side of the Ti layer 6 on which the Ni layer 4 is arranged. The Ni layer 4 and the Ti layer 6 are joined by clad rolling. A Ni—Ti series superelastic alloy layer 5 formed by alloying at least Ni of constituent elements of the Ni layer 4 and at least Ti of constituent elements of the Ti layer 6 is interposed between the Ni layer 4 and the Ti layer 6. The Ti layer 6 and the first Al layer 7 are joined by clad rolling in an adjoining manner.

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21-11-2013 дата публикации

SHEET STRUCTURE, METHOD OF MANUFACTURING SHEET STRUCTURE, AND ELECTRONIC DEVICE

Номер: US20130307136A1
Принадлежит: FUJITSU LIMITED

A sheet structure has: a bundle structure including a plurality of linear structures made of carbon which are oriented in a predetermined direction; a covering layer covering the plurality of linear structures made of carbon; and a filling layer provided between the plurality of linear structures made of carbon covered with the covering layer. The thickness of the covering layer is not uniform in a direction crossing the predetermined direction. 1. A sheet structure comprising:a bundle structure including a plurality of linear structures made of carbon which are oriented in a predetermined direction;a covering layer covering the plurality of linear structures made of carbon;a filling layer provided between the plurality of linear structures made of carbon covered with the covering layer,wherein thickness of the covering layer is not uniform in a direction crossing the predetermined direction.2. The sheet structure according to claim 1 , wherein elasticity is provided in reaction to deformation given in the predetermined direction.3. The sheet structure according to claim 1 , wherein thickness of the sheet structure is not constant claim 1 , andthickness of the covering layer in a part where the sheet structure is thicker is larger than that of the covering layer in a part where the sheet structure is thinner.4. The sheet structure according to claim 1 , wherein thermal conductivity of the covering layer is higher than thermal conductivity per unit area of the bundle structure.5. The sheet structure according to claim 1 , wherein thickness of the covering layer is 100 nm or less.6. The sheet structure according to claim 1 , wherein surface density of the linear structures made of carbon in the bundle structure is 1×10or larger.7. An electronic device comprising:a heat generating member;a heat dissipating member; and a bundle structure including a plurality of linear structures made of carbon which are oriented in a predetermined direction;', 'a covering layer ...

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21-11-2013 дата публикации

Reliable Area Joints for Power Semiconductors

Номер: US20130307156A1
Автор: Reinhold Bayerer
Принадлежит: INFINEON TECHNOLOGIES AG

A power semiconductor module includes an electrically insulating substrate, copper metallization disposed on a first side of the substrate and patterned into a die attach region and a plurality of contact regions, and a semiconductor die attached to the die attach region. The die includes an active device region and one or more copper die metallization layers disposed above the active device region. The active device region is disposed closer to the copper metallization than the one or more copper die metallization layers. The copper die metallization layer spaced furthest from the active device region has a contact area extending over a majority of a side of the die facing away from the substrate. The module further includes a copper interconnect metallization connected to the contact area of the die via an aluminum-free area joint and to a first one of the contact regions of the copper metallization.

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28-11-2013 дата публикации

Constructions Comprising Rutile-Type Titanium Oxide; And Methods of Forming and Utilizing Rutile-Type Titanium Oxide

Номер: US20130316153A1
Принадлежит: MICRON TECHNOLOGY, INC.

Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks. 125-. (canceled)26. A construction comprising a thermally conductive stack; the thermally conductive stack comprising two or more titanium nitride regions in alternating relationship with two or more titanium oxide regions; the titanium oxide within the titanium oxide regions consisting of rutile-type titanium oxide.27. The construction of further comprising integrated circuitry claim 26 , and wherein the thermally conductive stack is proximate one or more components of the integrated circuitry and configured to conduct heat to or from said one or more components.28. The construction of further comprising a semiconductor die claim 26 , and wherein the thermally conductive stack is proximate the semiconductor die and configured to conduct heat away from the semiconductor die.29. The construction of wherein the titanium nitride regions are at least 50Å thick claim 26 , and wherein the titanium oxide regions are at least 50Å thick.30. A construction comprising:a semiconductor die comprising integrated circuitry along a front side of the die;a thermally conductive stack against the die; the thermally conductive stack comprising two or more titanium nitride regions in alternating relationship with two or more titanium oxide regions; the titanium oxide within the titanium oxide regions consisting of rutile-type titanium oxide.31. The construction of ...

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05-12-2013 дата публикации

Heat-sink device intended for at least one electronic component and corresponding method

Номер: US20130322019A1

The present invention relates to a heat-sink device intended for at least one electronic component (12), including: heat-sink means; a substrate (11) for the at least one electronic component (12), said substrate covering the heat-sink means; and thermal coupling means provided between the substrate and the heat-sink means and made from a material different from that of the heat-sink means. According to the invention, the heat-sink means consist of a set of independent fins (10), and the thermal-coupling means (13) are made from a heat-conductive polymer material and also serve as mechanical coupling means between the substrate (11) and the fins (10).

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12-12-2013 дата публикации

Direct bonded copper substrate and power semiconductor module

Номер: US20130328200A1
Автор: Hyun Cheol Bae

Disclosed are a DBC substrate and a power semiconductor module having improved thermal reliability by directly forming a via in a substrate of a semiconductor device used mainly as a power device such as a silicon device, a silicon carbide (SiC) device, and a gallium nitride (GaN) device. The power semiconductor module includes: a DBC substrate including a ceramic base material defining a via, a lower copper layer connected to a bottom surface of the ceramic base material, and an upper copper layer connected to a top surface of the ceramic base material; a power semiconductor device stacked on the upper copper layer of the DBC substrate; and a heat dissipating device connected to the lower copper layer of the DBC substrate, and dissipating heat, generated by the operation of the power semiconductor device, through the via.

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19-12-2013 дата публикации

Substrate for power module, substrate with heat sink for power module, power module, method for producing substrate for power module, and method for producing substrate with heat sink for power module

Номер: US20130335921A1
Принадлежит: Mitsubishi Materials Corp

Provided is a power module substrate including a ceramic substrate, and a metal plate which contains aluminum or an aluminum alloy, and which is stacked and bonded on a surface of the ceramic substrate, wherein one or more additional elements selected from Ag, Zn, Ge, Mg, Ca, Ga, and Li are solid-solubilized in the metal plate, and the Ag concentration in the metal plate in the vicinity of the interface with the ceramic substrate is greater than or equal to 0.05% by mass and less than or equal to 10% by mass, or the total concentration of Zn, Ge, Mg, Ca, Ga, and Li in the metal plate in the vicinity of the interface with the ceramic substrate is greater than or equal to 0.01% by mass and less than or equal to 5% by mass.

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19-12-2013 дата публикации

Thermally Enhanced Semiconductor Package with Conductive Clip

Номер: US20130337611A1
Автор: Eung San Cho
Принадлежит: International Rectifier Corp USA

One exemplary disclosed embodiment comprises a semiconductor package including an inside pad, a transistor, and a conductive clip coupled to the inside pad and a terminal of the transistor. A top surface of the conductive clip is substantially exposed at the top of the package, and a side surface of the conductive clip is exposed at a side of the package. By supporting the semiconductor package on an outside pad during the fabrication process and by removing the outside pad during singulation, the conductive clip may be kept substantially parallel and in alignment with the package substrate while optimizing the package form factor compared to conventional packages. The exposed top surface of the conductive clip may be further attached to a heat sink for enhanced thermal dissipation.

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26-12-2013 дата публикации

METHOD AND DESIGN OF AN RF THRU-VIA INTERCONNECT

Номер: US20130341644A1

In summary, a vertical metalized transition in the form of a via goes from the back side of a high thermal conductivity substrate and through any semiconductor layers thereon to a patterned metalized strip, with the substrate having a patterned metalized layer on the back side that is provided with a keep away zone dimensioned to provide impedance matching for RF energy coupled through the substrate to the semiconductor device while at the same time permitting the heat generated by the semiconductor device to flow through the high thermal conductivity substrate, through the back side of the substrate and to a beat sink. 1. In a semiconductor RF connection for improved thermal management on a semiconductor chip , wherein the improvement comprises:a vertical transition passing through the semiconductor chip;a backside connection on the vertical transition, said backside connection configured to connect RF signals through the back of the semiconductor chip.2. A semiconductor RF connection of claim 1 , wherein the semiconductor chip is a GaN chip.3. A semiconductor RF connection of claim 1 , further comprising a diamond shim configured to spread heat and positioned proximal to the vertical transition.4. In a method of forming a semiconductor RF connection for improved thermal management on a semiconductor chip claim 1 , wherein the improvement comprises:forming a vertical transition passing through the semiconductor chip;connecting RF signals through the back of the semiconductor chip at the vertical transition, enabling backside heat sinking.5. A method according to claim 4 , wherein the semiconductor chip is a GaN chip.6. A method according to claim 4 , further comprising patterned metalized layer on the back of the chip having a keep away surrounding the base of the vertical transition for impedance matching.7. In a semi-conductor device having a high thermal conductivity substrate and a semiconductor layer thereon onto which is patterned a semi-conductor device ...

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26-12-2013 дата публикации

Microelectronic package having direct contact heat spreader and method of manufacturing same

Номер: US20130344659A1
Принадлежит: Individual

A method of fabricating a microelectronic package having a direct contact heat spreader, a package formed according to the method, a die-heat spreader combination formed according to the method, and a system incorporating the package. The method comprises metallizing a backside of a microelectronic die to form a heat spreader body directly contacting and fixed to the backside of the die thus yielding a die-heat spreader combination. The package includes the die-heat spreader combination and a substrate bonded to the die.

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02-01-2014 дата публикации

AIR CAVITY PACKAGES HAVING HIGH THERMAL CONDUCTIVITY BASE PLATES AND METHODS OF MAKING

Номер: US20140001628A1
Принадлежит:

A high thermal conductivity base plate is provided for use in air cavity packages. The base plate is at least partially comprised of a composite made of silver-diamond or a silver alloy-diamond. In some embodiments, the base plate is entirely comprised of the composite. In other embodiments, the base plate has a core made of the composite. The core can include at least one outer layer on the core. The semiconductor package can include one or more dice or transistors on the base plate, an insulated frame on the base plate, and one or more leads on the insulated frame. 1. A semiconductor package comprising a base plate at least partially comprised of a composite made of silver-diamond.2. The semiconductor package of claim 1 , wherein the silver in the silver-diamond composite comprises a silver alloy.3. The semiconductor package of claim 1 , wherein the silver alloy is CuAg eutectic.4. The semiconductor package of claim 1 , wherein the base plate is entirely comprised of the composite.5. The semiconductor package of claim 1 , wherein the base plate comprises a core made of the composite and at least one outer layer on the core.6. The semiconductor package of claim 5 , further comprising one or more dice or transistors mounted on the at least one outer layer.7. The semiconductor package of claim 6 , wherein the core is formed only in the region of the one or more dice or transistors.8. The semiconductor package of claim 1 , wherein the base plate comprises a core made of the composite.9. The semiconductor package of claim 8 , further comprising an outer region surrounding the core.10. The semiconductor package of claim 9 , further comprising at least one outer layer on the core and the outer region.11. The semiconductor package of claim 9 , wherein the outer region is a continuous phase of the silver or silver alloy of the core.12. The semiconductor package of claim 1 , further comprising one or more dice or transistors mounted on the base plate.13. The semiconductor ...

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02-01-2014 дата публикации

PACKAGED SEMICONDUCTOR DIE AND CTE-ENGINEERING DIE PAIR

Номер: US20140001629A1
Автор: Hu Chuan
Принадлежит:

Packaged semiconductor die and CTE-engineering die pairs and methods to form packaged semiconductor die and CTE-engineering die pairs are described. For example, a semiconductor package includes a substrate. A semiconductor die is embedded in the substrate and has a surface area. A CTE-engineering die is embedded in the substrate and coupled to the semiconductor die. The CTE-engineering die has a surface area the same and in alignment with the surface area of the semiconductor die. 1. A semiconductor package , comprising:a substrate;a semiconductor die embedded in the substrate and having a surface area; anda CTE-engineering die embedded in the substrate and coupled to the semiconductor die, and having a surface area the same and in alignment with the surface area of the semiconductor die.2. The semiconductor package of claim 1 , wherein the semiconductor die comprises silicon claim 1 , and the CTE-engineering die comprises copper.3. The semiconductor package of claim 1 , wherein the CTE-engineering die is claim 1 , or is greater than claim 1 , approximately 5 times as thick as the semiconductor die.4. The semiconductor package of claim 3 , wherein the semiconductor die has a thickness of approximately 20 microns claim 3 , and the CTE-engineering die has a thickness of approximately 100 microns.5. The semiconductor package of claim 1 , wherein the CTE-engineering die is coupled to the semiconductor die by a eutectic gold (Au) and tin (Sn) solder.6. The semiconductor package of claim 1 , wherein the substrate comprises a fan-out layer.7. The semiconductor package of claim 6 , wherein the semiconductor die and the CTE-engineering die are housed in a same molding layer of the substrate.8. The semiconductor package of claim 1 , wherein the substrate is a bumpless build-up layer (BBUL) substrate.9. The semiconductor package of claim 8 , wherein the semiconductor die and the CTE-engineering die are housed in a core of the substrate.10. The semiconductor package of claim 8 ...

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02-01-2014 дата публикации

EPOXY RESIN COMPOSITION, METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR DEVICE USING SAME

Номер: US20140005318A1
Принадлежит: Toray Industries, Inc.

Disclosed is an epoxy resin composition which has excellent workability and excellent thermal resistance after curing. The epoxy resin composition contains a compound which has a specific imide structure obtained by reacting a diamine having a phenolic hydroxyl group, such as 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (6FAP), with a tetracarboxylic dianhydride, and which has a number average molecular weight of 1,000 to 5,000; and a compound having at least two epoxy groups, such as a bisphenol A type epoxy resin. 3. The epoxy resin composition according to claim 1 , which is dissolved in cyclohexanone to a concentration of not less than 30% by weight.5. A semiconductor device comprising the epoxy resin composition according to .6. The epoxy resin composition according to claim 2 , which is dissolved in cyclohexanone to a concentration of not less than 30% by weight.7. A semiconductor device comprising the epoxy resin composition according to .8. A semiconductor device comprising the epoxy resin composition according to .9. A semiconductor device comprising the epoxy resin composition according to . The present invention relates to an epoxy resin composition which has excellent thermal resistance and low coefficient of thermal expansion, and which is soluble in a ketone solvent to have excellent workability; and to a semiconductor device using the same.In recent years, the size of semiconductor elements has been enlarged rapidly, and large thermal stress is formed between the semiconductor element and substrate. This is caused by the difference between the coefficient of thermal expansion of the semiconductor element composed of silicon and the coefficient of thermal expansion of the substrate based on an epoxy resin. The thermal stress is formed mainly at solder bump which connects the semiconductor element and the substrate, and underfill agents and the like are filled to relieve the stress. Although such a stress relaxation has an effect to some extent, it ...

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09-01-2014 дата публикации

RESIN COMPOSITION AND SHEET USING THE SAME

Номер: US20140011012A1
Принадлежит: ASAHI KASEI E-MATERIALS CORPORATION

A resin composition includes 1 to 20% by mass of (A) a copolymer containing a conjugated diene unit and a vinyl aromatic compound unit, 1 to 20% by mass of (B) a softening agent for rubber, and 70 to 95% by mass of (C) metal hydroxide, in which (A) the copolymer containing the conjugated diene unit and the vinyl aromatic compound unit includes a plurality of polymer blocks of the vinyl aromatic compound unit. 1. A sheet produced by forming a resin composition into sheet with a thickness of 0.8 mm or smaller ,wherein the sheet has yield stress of 1.0 MPa or more and rupture elongation of 30% or more as measured at 23° C. and a rate of pulling of 100 mm/min conforming to ISO 527-1,wherein the resin composition comprises:1 to 20% by mass of (A) a copolymer containing a conjugated diene unit and a vinyl aromatic compound unit;1 to 20% by mass of (B) a softening agent for rubber; and70 to 95% by mass of (C) aluminum hydroxide,wherein (A) the copolymer containing the conjugated diene unit and the vinyl aromatic compound unit includes a plurality of polymer blocks of the vinyl aromatic compound unit, and{'sub': '2', '(C) the aluminum hydroxide contains NaO in a concentration of 0.2% by mass or less.'}2. The sheet according to claim 1 , having a thermal resistance in a direction perpendicular to the sheet surface of 5° C./W or lower as measured by a steady state method conforming to ASTM D5470.3. The sheet according to claim 1 , further comprising a glass fiber cloth and/or an organic fiber cloth.4. An LED component comprising the sheet according to .5. A sheet produced by forming a resin composition into a sheet with a thickness of 0.8 mm or smaller claim 1 ,wherein a resin composition comprises 1 to 20% by mass of (A) a copolymer containing a conjugated diene unit and a vinyl aromatic compound unit, 1 to 20% by mass of (B) a softening agent for rubber, and 70 to 95% by mass of (C) metal hydroxide,(A) the copolymer containing the conjugated diene unit and the vinyl ...

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16-01-2014 дата публикации

GRAPHITE NANOPLATELETS FOR THERMAL AND ELECTRICAL APPLICATIONS

Номер: US20140014871A1

This disclosure concerns a procedure for bulk scale preparation of high aspect ratio, 2-dimensional nanoplatelets comprised of a few graphene layers, G. n may, for example, vary between about 2 to 10. Use of these nanoplatelets in applications such as thermal interface materials, advanced composites, and thin film coatings provide material systems with superior mechanical, electrical, optical, thermal, and antifriction characteristics. 1. A graphite nanoplatelet composite , comprising:a polymer; anda plurality of graphite nanoplatelets comprising intercalated and thermally exfoliated graphite having an average length which varies between about 1.7 to 0.35 μm and an average thickness which varies between about 60 to 1.7 nm;wherein the nanoplatelets are substantially separated from each other; andwherein the loading fraction of the graphite nanoplatelets ranges between approximately 0.2 to 50 vol. %, based upon the total volume of the composite.2. The composite of claim 1 , wherein the loading fraction of the graphite nanoplatelets less than about 50 vol. % claim 1 , less than about 40 vol. % claim 1 , less than about 30 vol. % claim 1 , less than about 20 vol. % claim 1 , less than about 10 vol. % claim 1 , less than about 5 vol. % claim 1 , less than about 2 vol. % claim 1 , and less than about 1 vol. % claim 1 , based upon the total volume of the composite.3. The composite of claim 1 , wherein the thermal conductivity of the composite is greater than or equal to about 1.1 W/mK for loading fractions greater than or equal to about 5.4 vol. %.4. The composite of claim 1 , wherein the thermal conductivity of the composite is greater than or equal to about 1.1 W/mK for graphite nanoplatelets having an average ratio of length to width greater than about 30.5. The composite of claim 1 , wherein the thermal conductivity of the composite is greater than or equal to about 1.1 W/mK for graphite nanoplatelets thermally treated using a heating rate greater than or equal to ...

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16-01-2014 дата публикации

Semiconductor device, manufacturing method of the same, and mobile phone

Номер: US20140018126A1
Автор: Atsushi Isobe, Kengo Asai
Принадлежит: Renesas Electronics Corp

A technique capable of maintaining the filter characteristics of a transmitting filter and a receiving filter by reducing the influences of heat from the power amplifier given to the transmitting filter and the receiving filter as small as possible in the case where the transmitting filter and the receiving filter are formed on the same semiconductor substrate together with the power amplifier in a mobile communication equipment typified by a mobile phone is provided. A high heat conductivity film HCF is provided on a passivation film PAS over the entire area of a semiconductor substrate 1 S including an area AR 1 on which an LDMOSFET is formed and an area AR 2 on which a thin-film piezoelectric bulk wave resonator BAW is formed. The heat mainly generated in the LDMOSFET is efficiently dissipated in all directions by the high heat conductivity film HCF formed on the surface of the semiconductor substrate 1 S.

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23-01-2014 дата публикации

Power device and power device module

Номер: US20140021620A1
Принадлежит: SAMSUNG ELECTRONICS CO LTD

According to example embodiments of inventive concepts, a power device includes a semiconductor structure having a first surface facing a second surface, an upper electrode, and a lower electrode. The upper electrode may include a first contact layer that is on the first surface of the semiconductor structure, and a first bonding pad layer that is on the first contact layer and is formed of a metal containing nickel (Ni). The lower electrode may include a second contact layer that is under the second surface of the semiconductor structure, and a second bonding pad layer that is under the second contact layer and is formed of a metal containing Ni.

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30-01-2014 дата публикации

Controlling thermal interface material bleed out

Номер: US20140027899A1
Принадлежит: Intel Corp

An extended preform of a thermal interface material (TIM) is formed between a heat spreader and a die on a substrate. The preform has an extension beyond a footprint of the die. The preform is cured. A bleed out of the TIM is controlled by the extension upon curing of the preform.

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06-02-2014 дата публикации

Self orienting micro plates of thermally conducting material as component in thermal paste or adhesive

Номер: US20140038362A1

The present invention relates generally to thermally-conductive pastes for use with integrated circuits, and particularly, but not by way of limitation, to self-orienting microplates of graphite. 1. A method for fabricating a device comprising 1) obtaining an integrated circuit chip , 2) obtaining a heat sink , and 3) obtaining a thermally conductive paste composition comprises platelets of a thermally-conductive material , wherein said platelets have an aspect ratio of at least 2:1; and a liquid; 4) locating the heat sink on the integrated circuit chip and 5) locating the thermally conductive paste composition between the integrated circuit chip and heat sink.2. The method according to claim 1 , wherein said thermally-conductive material comprises a metal.3. The method according to claim 1 , wherein said liquid is selected from the group consisting of liquid metals and oils.4. The method according to claim 1 , wherein the paste composition has an anisotropic thermal transmission character and comprises platelets of a material having a basal plane in a z-direction with a first length and a platelet plane having second and third lengths in an x- and a y-direction respectively claim 1 , said second and third lengths larger than said first length.5. The method according to claim 1 , wherein said material comprises graphite.6. The method according to claim 1 , wherein said material is selected from the group consisting of graphite claim 1 , single crystal graphite claim 1 , multiwall carbon nanotube claim 1 , oriented pyrolytic graphite fiber claim 1 , and graphene film rolled into a fiber.7. The method according to claim 1 , wherein said platelets have an aspect ratio of at least 5:1.8. The method according to claim 1 , wherein said first length is from about 1 micron to about 50 mils.9. The method according to claim 3 , wherein said oil is a polyalphaolefin oil.10. The method according to claim 3 , wherein said liquid metal is selected from the group consisting of ...

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13-02-2014 дата публикации

Power MOSFET Having Selectively Silvered Pads for Clip and Bond Wire Attach

Номер: US20140042624A1
Автор: Nathan Zommer
Принадлежит: IXYS LLC

A packaged power field effect transistor device includes a power field effect transistor die, a DBA substrate, a clip, a wire bond, leads, and an amount of plastic encapsulant. The top of the DBA has a plurality of metal plate islands. A sintered silver feature is disposed on one of the islands. A silvered backside of the die is directly bonded to the sintered silver structure of the DBA. The upper surface of the die includes a first aluminum pad (a source pad) and a second aluminum pad (a gate pad). A sintered silver structure is disposed on the first aluminum pad, but there is no sintered silver structure disposed on the second aluminum pad. A high current clip is attached via soft solder to the sintered silver structure on the first aluminum pad (the source pad). A bond wire is ultrasonically welded to the second aluminum pad (gate pad).

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13-02-2014 дата публикации

Semiconductor module cooler and semiconductor module

Номер: US20140043765A1
Принадлежит: Fuji Electric Co Ltd

A semiconductor module cooler supplies a coolant to a water jacket from outside and cools a semiconductor device arranged on an outer surface of the cooler. The semiconductor module cooler has a heat sink thermally connected to the semiconductor device; a first flow channel arranged inside the water jacket with a guide section extending from a coolant inlet and having an inclined surface for guiding the coolant toward one side surface of the heat sink; a second flow channel arranged inside the water jacket in parallel to the first flow channel and extending to a coolant outlet; and a third flow channel formed inside the water jacket at a position connecting the first flow channel and the second flow channel. The coolant inlet and the coolant outlet are formed on a same wall surface of the water jacket, and the heat sink is arranged in the third flow channel.

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06-03-2014 дата публикации

Electronic device and semiconductor device

Номер: US20140061821A1
Принадлежит: Renesas Electronics Corp

Provided is an electronic device having a semiconductor device and a mounting board. The semiconductor device has a die pad, a semiconductor chip on the die pad, a coupling member coupling the die pad to the semiconductor chip, and a semiconductor package member covering the upper portion of the semiconductor chip and the side surface of the die pad. In this semiconductor device, the plane area of the coupling member coupling the mounting board to the die pad is smaller than the plane area of the lower surface of the die pad exposed from the semiconductor package material. This makes it possible to reduce separation between the die pad and the semiconductor chip resulting from cracks, due to temperature cycling, of the coupling member present between the die pad and the semiconductor chip.

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13-03-2014 дата публикации

ELECTROCHEMICALLY DEPOSITED INDIUM COMPOSITES

Номер: US20140070399A1
Принадлежит:

Electrochemically deposited indium composites are disclosed. The indium composites include indium metal or an alloy of indium with one or more ceramic materials. The indium composites have high bulk thermal conductivities. Articles containing the indium composites also are disclosed. 1. A composition comprising one or more sources of indium ions , one or more epihalohydrin copolymers and one or more ceramic materials.2. The composition of claim 1 , further comprising one or more dispersing agents chosen from silicone dispersants claim 1 , polyalkoxylated ethers claim 1 , glycol ethers and cationic surface-active agents.3. The composition of claim 1 , further comprising one or more alloying metals chosen from bismuth claim 1 , copper claim 1 , gold claim 1 , tin claim 1 , silver and zinc.4. The composition of claim 1 , wherein the one or more ceramic materials are chosen from diamond claim 1 , graphite claim 1 , ceramic oxides claim 1 , ceramic carbides claim 1 , ceramic nitrides claim 1 , ceramic borides claim 1 , ceramic silicides and intermetallics.5. The composition of claim 4 , wherein the one or more ceramic materials are particles having an average size of 30 nm to 20 μm.68-. (canceled)9. A composite comprising indium metal or indium alloy and a uniform dispersion of one or more ceramic materials claim 4 , the composition has a thermal conductivity of at least 80 W/mK.10. An article comprising a die joined on a first side to a base claim 4 , a second side of the die opposite the first side comprises a thermal interface material comprising indium metal or an indium alloy and one or more ceramic materials uniformly distributed throughout the indium metal or the indium alloy claim 4 , the thermal interface material has a thermal conductivity of at least 80 W/mK.11. The composition of claim 1 , wherein the epihalohydrin copolymers are water-soluble polymerization products of epichlorohydrin or epibromohydrin and one or more organic compounds comprising nitrogen ...

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13-03-2014 дата публикации

Semiconductor device with front and back side resin layers having different thermal expansion coefficient and elasticity modulus

Номер: US20140070413A1
Автор: Masaki Kasai, Osamu Miyata
Принадлежит: ROHM CO LTD

Disclosed are a semiconductor device wherein warping of a semiconductor chip due to a sudden temperature change can be prevented without increasing the thickness, and a semiconductor device assembly. The semiconductor device comprises a semiconductor chip, a front side resin layer formed on the front surface of the semiconductor chip by using a first resin material, and a back side resin layer formed on the back surface of the semiconductor chip by using a second resin material having a higher thermal expansion coefficient than the first resin material. The back side resin layer is formed thinner than the front side resin layer.

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13-03-2014 дата публикации

Power module substrate, power module, and method for manufacturing power module substrate

Номер: US20140071633A1
Принадлежит: Mitsubishi Materials Corp

A power module substrate includes: a ceramics substrate composed of AlN, having a top face; a metal plate composed of pure aluminum and joined to the top face of the ceramics substrate with a brazing filler metal including silicon interposed therebetween; and a high concentration section formed at a joint interface at which the metal plate is joined to the ceramics substrate, having a silicon concentration that is more than five times the silicon concentration in the metal plate.

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27-03-2014 дата публикации

SEMICONDUCTOR PACKAGE AND SEMICONDUCTOR DEVICES WITH THE SAME

Номер: US20140084446A1
Автор: PARK Soojeoung
Принадлежит:

A semiconductor package includes a substrate, a ground circuit supported by the substrate, at least one semiconductor chip disposed on the substrate and a carbon-containing heat-dissipating part disposed on the substrate and electrically connected to the ground circuit. The heat-dissipating part may include carbon fibers and/or carbon cloth. 1. A semiconductor package , comprising:a substrate;a ground circuit supported by the substrate;at least one semiconductor chip disposed on the substrate; anda carbon-containing heat-dissipating part disposed on the substrate and electrically connected to the ground circuit.2. The semiconductor package of claim 1 , wherein the heat-dissipating part comprises carbon fibers and/or carbon cloth.3. The semiconductor package of claim 1 , further comprising a connection pattern disposed adjacent to the at least one semiconductor chip and configured to electrically connect the ground circuit to the heat-dissipating part.4. The semiconductor package of claim 1 , wherein the heat-dissipating part is spaced apart from the at least one semiconductor chip and extends along a periphery of the at least one semiconductor chip.5. The semiconductor package of claim 4 , wherein the heat-dissipating part has a top surface that is lower than or substantially coplanar with a top surface of the at least one semiconductor chip.6. The semiconductor package of claim 1 , wherein the heat-dissipating part at least partially covers a top surface of the at least one semiconductor chip.7. The semiconductor package of claim 1 , further comprising a molding part covering the heat-dissipating part.8. The semiconductor package of claim 1 , further comprising a molding part disposed on the substrate and covering the semiconductor chip and the heat-dissipating part.9. The semiconductor package of claim 1 , wherein the heat-dissipating part comprises a first heat-dissipating part disposed adjacent a periphery of the semiconductor chip and wherein the package ...

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03-04-2014 дата публикации

Method for producing graphite film and graphite film produced by the method

Номер: US20140093713A1
Принадлежит: Kaneka Corp

A graphite film excelling in heat conductivity, especially, a graphite film of high heat conductivity that even when its thickness is large, would not suffer damage by heat treatment. There is provided a process for producing a graphite film, including graphitizing a raw material film of a polymer film and/or carbonized polymer film, characterized by including (i) holding the raw film in a vessel capable of direct passage of current through voltage application and (ii) applying voltage to the vessel to thereby induce electrification so that graphitization is carried out. There is further provided a process for producing a graphite film, characterized by including the step of holding the raw material film in vessel (A) being electrifiable, subsequently holding the resultant vessel (A) in vessel (B) being electrifiable and effecting current passage through the whole so that graphitization is carried out.

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10-04-2014 дата публикации

SEMICONDUCTOR STRUCTURE

Номер: US20140097540A1
Принадлежит: Chipbond Technology Corporation

A semiconductor structure includes a silicon substrate, a titanium layer, a nickel layer, a silver layer and a metallic adhesion layer, wherein the silicon substrate comprises a back surface, and the titanium layer comprises an upper surface. The titanium layer is formed on the back surface, the nickel layer is formed on the upper surface, the silver layer is formed on the nickel layer, and the metallic adhesion layer is formed between the nickel layer and the silver layer. 1. A semiconductor structure at least includes:a silicon substrate having an active surface and a back surface;a titanium layer formed on the back surface comprises an upper surface;a nickel layer formed on the upper surface of the titanium layer;a silver layer formed on the nickel layer; anda metallic adhesion layer formed between the nickel layer and the silver layer, wherein the metallic adhesion layer comprises a first thickness and the titanium layer comprises a second thickness such that the first thickness is not greater than the second thickness.2. The semiconductor structure in accordance with claim 1 , wherein the material of the metallic adhesive layer is titanium.3. The semiconductor structure in accordance with claim 1 , wherein the thickness of the titanium layer ranges from 100-10000 Å.4. The semiconductor structure in accordance with claim 1 , wherein the thickness of the nickel layer ranges from 100-10000 Å.5. The semiconductor structure in accordance with claim 1 , wherein the thickness of the silver layer ranges from 100-100000 Å.6. The semiconductor structure in accordance with claim 1 , wherein the thickness of the metallic adhesion layer ranges from 1-5000 Å.7. (canceled) The present invention is generally related to a semiconductor structure, which particularly relates to the semiconductor structure with low resistance.In conventional semiconductor process, a back side metal process is developed in order to improve heat dissipation of high power IC, which evaporates or ...

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06-01-2022 дата публикации

Thermally Conductive Resin Sheet, Laminated Heat Dissipation Sheet, Heat Dissipation Circuit Board, and Power Semiconductor Device

Номер: US20220002608A1
Принадлежит: MITSUBISHI CHEMICAL CORPORATION

Provided is a thermally conductive resin sheet having sufficient withstand voltage performance and excellent moisture absorption reflow tolerance that comprises a resin composition containing a crystalline thermoplastic resin having a melting point of 300° C. or higher and a thermally conductive filler, the thermally conductive filler comprising boron nitride agglomerated particles. 1. A thermally conductive resin sheet comprising a resin composition containing:a crystalline thermoplastic resin having a melting point of 300° C. or higher; anda thermally conductive filler comprising boron nitride agglomerated particles.2. The thermally conductive resin sheet according to claim 1 , wherein the resin composition comprises15% by mass or more and 40% by mass or less of the crystalline thermoplastic resin; and60% by mass or more and 85% by mass or less of the thermally conductive filler.3. The thermally conductive resin sheet according to claim 1 , wherein the thermally conductive filler comprises 50% by mass or more of the boron nitride agglomerated particles.4. The thermally conductive resin sheet according to claim 1 , wherein the boron nitride agglomerated particles have a card-house structure.5. The thermally conductive resin sheet according to claim 1 , wherein the thermal conductivity of the thermally conductive resin sheet in a thickness direction at 25° C. is 5.0 W/m·K or more.611. The thermally conductive resin sheet according to claim claim 1 , wherein the thermal conductivity of the thermally conductive resin sheet in the thickness direction at 25° C. is 7.0 W/m·K or more.7. The thermally conductive resin sheet according to claim 5 , wherein the thermal conductivity of the thermally conductive resin sheet in the thickness direction at 200° C. is 90% or more of the thermal conductivity of the thermally conductive resin sheet in the thickness direction at 25° C.8. The thermally conductive resin sheet according to claim 1 , wherein a thickness of the thermally ...

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03-01-2019 дата публикации

HEAT-DISSIPATING FILM, AND ITS PRODUCTION METHOD AND APPARATUS

Номер: US20190001616A1
Автор: Kagawa Seiji
Принадлежит:

A heat-dissipating film comprising a heat-conductive layer obtained by burning a mixture layer of flaky carbon and a binder resin to carbonize or burn off the binder resin, and plastic films covering the heat-conductive layer, the heat-conductive layer having a density of 1.9 g/cmor more and thermal conductivity of 450 W/mK or more, is produced by (1) sandwiching a mixture layer of flaky carbon and a binder resin with a pair of first plastic films to form a laminated film; (2) heat-pressing the laminated film to densify the mixture layer; (3) burning the mixture layer to carbonize the binder resin in the mixture layer; (4) pressing the resultant burnt layer to form the heat-conductive layer; and (5) sealing the heat-conductive layer with second plastic films. 1. A method for producing a heat-dissipating film comprising the steps of (1) sandwiching a mixture layer of flaky carbon and a binder resin with a pair of first plastic films to form a laminated film; (2) heat-pressing said laminated film to densify said mixture layer; (3) burning said mixture layer exposed by peeling said first plastic films to carbonize or burn off said binder resin in said mixture layer; (4) pressing the resultant burnt layer to form a densified heat-conductive layer; and (5) sealing said heat-conductive layer with second plastic films.2. The method for producing a heat-dissipating film according to claim 1 , wherein a step of applying a dispersion comprising 5-25% by mass of flaky carbon and 0.05-2.5% by mass of a binder resin in an organic solvent claim 1 , a mass ratio of said binder resin to said flaky carbon being 0.01-0.1 claim 1 , to a surface of each first plastic film claim 1 , and then drying said dispersion is repeated plural times claim 1 , to form said mixture layer.3. The method for producing a heat-dissipating film according to claim 1 , wherein the amount of said dispersion applied by one operation is 5-30 g/m(expressed by the weight of flaky carbon per 1 m).4. The method ...

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04-01-2018 дата публикации

HIGH THERMAL CONDUCTIVE SILICON NITRIDE SINTERED BODY, AND SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD AND SEMICONDUCTOR APPARATUS USING THE SAME

Номер: US20180002237A1
Автор: Aoki Katsuyuki
Принадлежит:

The present invention provides a high thermal conductive silicon nitride sintered body having a thermal conductivity of 50 W/m·K or more and a three-point bending strength of 600 MPa or more, wherein when an arbitrary cross section of the silicon nitride sintered body is subjected to XRD analysis and highest peak intensities detected at diffraction angles of 29.3±0.2°, 29.7±0.2°, 27.0±0.2°, and 36.1±0.2° are expressed as I, I, I, and I, a peak ratio (I)/(I+I) satisfies a range of 0.01 to 0.08, and a peak ratio (I)/(I+I) satisfies a range of 0.02 to 0.16. Due to above configuration, there can be provided a silicon nitride sintered body having a high thermal conductivity of 50 W/m·K or more, and excellence in insulating properties and strength. 1. A high thermal conductive silicon nitride sintered body having a thermal conductivity of 50 W/m·K or more and a three-point bending strength of 600 MPa or more , wherein when an arbitrary cross section of the silicon nitride sintered body is subjected to XRD analysis and highest peak intensities detected at diffraction angles of 29.3±0.2° , 29.7±0.2° , 27.0±0.2° , and 36.1±0.2° are expressed as I , I , I , and I ,{'sub': 29.3°', '27.0°', '36.1°', '29.7°', '27.0°', '36.1°, 'a peak ratio (I)/(I+I) satisfies a range of 0.01 to 0.08, and a peak ratio (I)/(I+I) satisfies a range of 0.02 to 0.16.'}2. The high thermal conductive silicon nitride sintered body according to claim 1 , wherein the I and I are peaks corresponding to a rare earth element-hafnium-oxygen compound crystal claim 1 , and the I and Iare peaks corresponding to a β-SiNcrystal.3. The high thermal conductive silicon nitride sintered body according to claim 2 , wherein the rare earth element-hafnium-oxygen compound crystal comprises two or more types of compound crystals having same constituent elements and different composition ratios.4. The high thermal conductive silicon nitride sintered body according to claim 1 , wherein a sum of the peak ratio (I)/(I+I) and ...

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04-01-2018 дата публикации

Method of Joining Metal-Ceramic Substrates to Metal Bodies

Номер: US20180002239A1
Автор: Knoll Heiko
Принадлежит:

A method of joining a metal-ceramic substrate having metalization on at least one side to a metal body by using a metal alloy is disclosed. The metal body has a thickness of less than 1.0 mm, and the metal alloy contains aluminum and has a liquidus temperature of greater than 450° C. The resulting metal-ceramic module provides a strong bond between the metal body and the ceramic substrate. The resulting module is useful as a circuit carrier in electronic appliances, with the metal body preferably functioning as a cooling body. 112-. (canceled)13. A module comprising:a metal-ceramic substrate having metalization on at least one side, wherein the metal-ceramic substrate is adapted to have a semiconductor component disposed on at least one metalized side of the metal-ceramic substrate, and wherein the metal-ceramic substrate includes a ceramic substrate and no more than two metal layers each of which directly contacts the ceramic substrate;a metal body having a thickness of less than 1 mm; anda joining region joining the ceramic substrate to the metal body, the joining region including a metal alloy containing aluminum and having a liquidus temperature of greater than 450° C.14. The module of claim 13 , wherein the peeling force required for separating the metal-ceramic substrate from the metal body is greater than 3 N/mm.15. The module of used as a circuit carrier in an electronic appliance.16. The module of claim 13 , wherein a surface of the metal-ceramic substrate that contacts the metal alloy has a first surface area claim 13 , wherein a surface of the metal body that contacts the metal alloy has a second surface area claim 13 , and wherein the first surface area is smaller than the second surface area.17. The module of claim 13 , wherein the metal alloy further comprises silicon.18. The module of claim 13 , wherein the metal alloy further comprises magnesium.19. The module of claim 13 , wherein based on the total weight of the metal alloy claim 13 , the metal ...

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03-01-2019 дата публикации

PROCESS FOR NANO GRAPHENE PLATELET-REINFORCED COMPOSITE MATERIAL

Номер: US20190002278A1
Принадлежит: Nanotek Instruments, Inc.

A process for producing a nanographene platelet-reinforced composite material having nanographene platelets or sheets (NGPs) as a first reinforcement phase dispersed in a matrix material and the first reinforcement phase occupies a weight fraction of 1-90% based on the total composite weight. Preferably, these NGPs, alone or in combination with a second reinforcement phase, are bonded by an adhesive and constitute a continuous 3-D network of electron- and phonon-conducting paths. 1. A process for producing a nanographene platelet-reinforced composite material comprising(a) providing a plurality of nanographene platelets;(b) bonding said nanographene platelets with an adhesive material to form a porous preform having a three-dimensional network of continuous electron- and phonon-conducting paths;(c) impregnating said porous preform with a matrix material to form an impregnated preform; and(d) solidifying said impregnated preform to produce said nanographene platelet-reinforced composite material.2. The process of claim 1 , further comprising a step of compression claim 1 , before or after said step of impregnating said porous preform.3. The process of claim 1 , further comprising a step of heat treatment at a temperature from 500° C. to 2 claim 1 ,500° C.4. The process of claim 1 , further comprising a step of coating said nanographene platelet-reinforced composite material with a high-emissivity material.5. The process of claim 4 , wherein said high-emissivity material is selected from the group consisting of aluminum oxide claim 4 , zinc oxide claim 4 , aluminum nitride claim 4 , titanium oxide claim 4 , boron nitride claim 4 , silicon carbide claim 4 , silicon nitride claim 4 , gallium nitride claim 4 , and combinations thereof.6. The process of claim 1 , further comprising a step of assembling multiple pieces of nanographene platelet-reinforced composite material into a finned unit.7. The process of claim 1 , wherein said nanographene platelets comprise 15 to 90 ...

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03-01-2019 дата публикации

Aluminum nitride film, method of manufacturing aluminum nitride film, and high withstand voltage component

Номер: US20190002281A1

An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.

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03-01-2019 дата публикации

CARBON NANOTUBE COMPOSITE MATERIAL AND METHOD FOR PRODUCING CARBON NANOTUBE COMPOSITE MATERIAL

Номер: US20190002284A1
Принадлежит:

A carbon nanotube composite material includes a fixture sheet having a front side and a back side, and a carbon nanotube array sheet embedded in or bonded to both front and back sides of the fixture sheet. 1. A carbon nanotube composite material comprising:a fixture sheet having a front side and a back side, anda carbon nanotube array sheet embedded in or bonded to both front and back sides of the fixture sheet.2. The carbon nanotube composite material of claim 1 , wherein{'sup': '3', 'the carbon nanotube array sheet has an average bulk density of 50 mg/cmor more.'}3. The carbon nanotube composite material of claim 1 , whereinthe fixture sheet includesa substrate, anda resin layer disposed on both front and back sides of the substrate, andthe substrate-side end portion of the carbon nanotube array sheet is embedded in the corresponding resin layer to be in contact with the substrate.4. The carbon nanotube composite material of claim 3 , whereinthe substrate is electroconductive.5. The carbon nanotube composite material of claim 3 , whereinthe substrate is formed from a sintered inorganic material.6. The carbon nanotube composite material of claim 1 , whereinthe fixture sheet comprises a conductive layer having electroconductivity, andthe conductive layer-side end portion of the carbon nanotube array sheet is bonded to the interface of the conductive layer.7. The carbon nanotube composite material of claim 1 , whereinthe front-side carbon nanotube array sheet and the back-side carbon nanotube array sheet are embedded in the fixture sheet, and are in contact with each other in the fixture sheet.8. A method for producing a carbon nanotube composite material claim 1 , the method comprising:preparing a fixture sheet including a substrate and a resin layer disposed on both front and back sides of the substrate,allowing vertically-aligned carbon nanotube to grow on a growth substrate,removing the vertically-aligned carbon nanotube from the growth substrate to form a carbon ...

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06-01-2022 дата публикации

SILVER-INDIUM TRANSIENT LIQUID PHASE METHOD OF BONDING SEMICONDUCTOR DEVICE AND HEAT-SPREADING MOUNT AND SEMICONDUCTOR STRUCTURE HAVING SILVER-INDIUM TRANSIENT LIQUID PHASE BONDING JOINT

Номер: US20220005744A1
Принадлежит: LIGHT-MED (USA), INC.

A silver-indium transient liquid phase method of bonding a semiconductor device and a heat-spreading mount, and a semiconductor structure having a silver-indium transient liquid phase bonding joint are provided. With the ultra-thin silver-indium transient liquid phase bonding joint formed between the semiconductor device and the heat-spreading mount, its thermal resistance can be minimized to achieve a high thermal conductivity. Therefore, the heat spreading capability of the heat-spreading mount can be fully realized, leading to an optimal performance of the high power electronics and photonics devices. 1. An Ag—In transient liquid phase (TLP) method of bonding a semiconductor device and a heat-spreading mount , comprising: 'forming a first Ag TLP bonding layer on a bottom of the semiconductor device;', 'forming a first bonding structure at a bottom side of the semiconductor device, including {'sub': 2', '2', '2, 'forming a multi-layer structure having a second Ag TLP bonding layer on a top of the heat-spreading mount, an intermediate transient AgInIMC (intermetallics compound) layer on a top of the Ag TLP bonding layer, an In TLP bonding layer on a top of the intermediate transient AgInIMC layer, and an anti-oxidation AgInIMC capping layer on a top of the In TLP bonding layer;'}, 'forming a second bonding structure at a top side of the heat-spreading mount, including{'sub': 2', '2, 'performing an Ag—In bonding process on the first bonding structure and the second bonding structure, thereby converting the first bonding structure and the second bonding structure into a bonding joint including a sandwich bonding structure having a first Ag—In solid solution layer in contact with the semiconductor device, a second Ag—In solid solution layer in contact with the heat-spreading mount, and an AgIn IMC layer sandwiched by the first Ag—In solid solution layer and the second Ag—In solid solution layer, such that the bonding joint joins the semiconductor device and the heat- ...

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07-01-2016 дата публикации

Apparatus, composition for adhesive, and adhesive sheet

Номер: US20160002439A1
Принадлежит: Sumitomo Bakelite Co Ltd

An apparatus ( 1 ) includes a supporting base material ( 12 ) that supports an element ( 11 ), a heat-dissipating member ( 13 ) on which the supporting base material ( 12 ) is installed, and an adhesive layer ( 14 ) disposed between the heat-dissipating member ( 13 ) and the supporting base material ( 12 ). The glass transition temperature of the adhesive layer ( 14 ) is equal to or lower than −30° C.

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04-01-2018 дата публикации

COMPOSITION FOR FORMING ADHESIVE LAYER, ADHESIVE LAYER, MANUFACTURING METHOD FOR ADHESIVE LAYER, COMPOSITE MATERIAL, SHEET, HEAT DISSIPATION MEMBER, ELECTRONIC DEVICE, BATTERY, CAPACITOR, AUTOMOBILE COMPONENT, AND MACHINE MECHANISM COMPONENT

Номер: US20180002580A1
Принадлежит: JNC CORPORATION

The invention relates to a composition for forming an adhesive layer, an adhesive layer, a manufacturing method for the adhesive layer, a composite material, a sheet, a heat dissipation member, an electronic device, a battery, a capacitor, an automobile component and a machine mechanism component, and the composition for forming the adhesive layer contains a polyvinyl acetal resin and a compound having an oxazoline group. 1. A composition for forming an adhesive layer , comprising a polyvinyl acetal resin and a compound having an oxazoline group.4. The composition according to claim 2 , wherein R in constitutional unit A is hydrogen or alkyl having 1 to 3 carbons.5. The composition according to claim 1 , comprising 0.02 to 1 part by mass of the compound having the oxazoline group based on 1 part by mass of the polyvinyl acetal resin.6. An adhesive layer claim 1 , obtained by using a polyvinyl acetal resin and a compound having an oxazoline group.7. An adhesive layer claim 1 , obtained by using the composition according to .8. A manufacturing method for the adhesive layer according to claim 6 , comprising steps (1) and (2) below:step (1): forming a layer comprising a polyvinyl acetal resin and a compound having an oxazoline group; andstep (2): heating the layer obtained in step (1).9. A composite material claim 6 , formed by adhering to each other claim 6 , one kind of carbon material selected from the group of a graphite sheet claim 6 , a carbon fiber claim 6 , a carbon nanotube and diamond claim 6 , or at least two kinds of carbon materials selected from the group claim 6 , by using the adhesive layer according to .10. A sheet claim 6 , formed by adhering at least one kind of carbon material selected from the group of a graphite sheet claim 6 , a carbon fiber claim 6 , a carbon nanotube and diamond to a metal sheet by using the adhesive layer according to .11. A heat dissipation member claim 9 , comprising the composite material according to .12. An electronic ...

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03-01-2019 дата публикации

THERMALLY CONDUCTIVE SILICONE COMPOSITION AND SEMICONDUCTOR DEVICE

Номер: US20190002694A1
Автор: AKIBA Shota, TSUJI Kenichi
Принадлежит: SHIN-ETSU CHEMICAL CO., LTD.

The composition is a thermally conductive silicone composition containing the following components (A) to (C) and (D). The component (A) is an organopolysiloxane that exhibits a kinetic viscosity of 10 to 100,000 mm/s at 25° C., and is represented by an average composition formula (1) 2. The thermally conductive silicone composition according to claim 1 , wherein the thermally conductive filler as the component (C) is an aluminum powder having a tap density of 0.5 to 2.6 g/cmand a specific surface area of 0.15 to 3.0 m/g.3. The thermally conductive silicone composition according to claim 1 , wherein the thermally conductive filler as the component (C) has an aspect ratio of 1.0 to 3.0.4. The thermally conductive silicone composition according to claim 1 , wherein α/β which is a ratio of a mass α of the silver powder as the component (B) to a mass β of the aluminum powder as the component (C) is 3 to 150.5. The thermally conductive silicone composition according to claim 1 , wherein the whole or part of the component (A) is: an organopolysiloxane as a component (E) that has at least two silicon atom-bonded alkenyl groups in one molecule; and/or an organohydrogenpolysiloxane as a component (F) that has at least two silicon atom-bonded hydrogen atoms in one molecule.7. A semiconductor device comprising a heat-generating electronic part and a heat dissipator with the thermally conductive silicone composition as set forth in being interposed between the heat-generating electronic part and the heat dissipator.8. A method for producing a semiconductor device claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'heating the thermally conductive silicone composition as set forth in to 80° C. or higher with a pressure of not lower than 0.01 MPa being applied thereto, with the thermally conductive silicone composition being sandwiched between a heat-generating electronic part and a heat dissipator.'} The present invention relates to a silicone composition ...

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07-01-2016 дата публикации

Composite Structure of Tungsten Copper and Molybdenum Copper with Embedded Diamond for Higher Thermal Conductivity

Номер: US20160003563A1
Автор: Sanchayan Dutta
Принадлежит: Thermal Management Solutions LLC

A heatsink for dissipating heat generated by electronic components comprising an outer frame of copper tungsten or copper molybdenum metal matrix composite having a cavity extending between the top and the bottom surfaces, a copper-diamond composite material within the opening, and copper plating on the top and the bottom surfaces. The heatsink also includes an array of alternating layers of copper and a material selected from the group of molybdenum and copper/molybdenum metal matrix surrounding the outer frame. The heatsink can be manufactured by press fitting at room temperature a porous isotropic diamond material in the cavity of an outer frame of porous tungsten or molybdenum, co-infiltrating the assembly under pressure with copper, press fitting at room temperature the outer frame into the layered array, and subjecting the heatsink to a temperature of approximately 800 Deg C.

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