03-01-2019 дата публикации
Номер: US20190006222A1
A 3D semiconductor device, including: a first level including a single crystal layer, a plurality of first transistors, and a first metal layer, forming memory control circuits; a second level overlaying the single crystal layer, and including a plurality of second transistors and a plurality of first memory cells; a third level overlaying the second level, and including a plurality of third transistors and a plurality of second memory cells; where the second transistors are aligned to the first transistors with less than 40 nm alignment error, where the memory cells include a NAND non-volatile memory type, where some of the memory control circuits can control at least one of the memory cells, and where some of the memory control circuits are designed to perform a verify read after a write pulse so to detect if the at least one of the memory cells has been successfully written. 1. A 3D semiconductor device , the device comprising: 'wherein connections between said first transistors and first metal layer comprise said first contact plugs;', 'a first level comprising a single crystal layer, a plurality of first transistors, a plurality of first contact plugs and a first metal layer,'}memory control circuits comprising a portion of said connections and said plurality of first transistors;a second level overlaying said single crystal layer, said second level comprising a plurality of second transistors;a third level overlaying said second level, said third level comprising a plurality of third transistors;a second metal layer overlaying said third level; and wherein said second transistors are aligned to said first transistors with less than 40 nm alignment error,', 'wherein said third metal layer comprises bit lines,', 'wherein said second level comprises a plurality of first memory cells,', 'wherein said third level comprises a plurality of second memory cells,', 'wherein one of said second transistors is at least partially self-aligned to at least one of said third ...
Подробнее
