Light-emitting device and a method of manufacturing light-emitting device

To provide a highly reliable light-emitting device and especially a light-emitting device which can be formed without use of a metal mask and includes a plurality of light-emitting elements. A structural body at least an end of which has an acute-angled shape is provided so that the end can pass downward through an electrically conductive film formed over the insulating layer and can be at least in contact with an insulating layer having elasticity, thereby physically separating the electrically conductive film, and the electrically conductive films are thus electrically insulated from each other. Such a structure may be provided between adjacent light-emitting elements so that the light-emitting elements can be electrically insulated from each other in the light-emitting device.

Light-emitting device and a method of manufacturing light-emitting device

To provide a highly reliable light-emitting device and especially a light-emitting device which can be formed without use of a metal mask and includes a plurality of light-emitting elements. A structural body at least an end of which has an acute-angled shape is provided so that the end can pass downward through an electrically conductive film formed over the insulating layer and can be at least in contact with an insulating layer having elasticity, thereby physically separating the electrically conductive film, and the electrically conductive films are thus electrically insulated from each other. Such a structure may be provided between adjacent light-emitting elements so that the light-emitting elements can be electrically insulated from each other in the light-emitting device.

Catheter for insertion into branched blood vessel

A branch blood vessel insertion catheter has a catheter body having a lumen penetrating therethrough from a distal end of the catheter body to a proximal end thereof to allow a guide wire to be inserted therethrough. The catheter body has an inner layer, a wire-wound reinforcing member provided on an outer surface of the inner layer, and an outer layer covering both the inner layer and the reinforcing member. The catheter body has a first physical property change point located at a position apart from a distal end of the catheter at a distance of 3.0 to 7.0 mm and a rigidity of a portion of the catheter body located proximally from the first physical property change point is set higher than that of a portion of the catheter body located distally from the first physical property change point.

Tablet conveying apparatus and tablet cutting apparatus

A tablet conveying and cutting apparatus capable of adjusting the position of a tablet is a structure suitable for downsizing. A tablet conveying and cutting apparatus has an arranging device for arranging a long side of the tablet to be perpendicular to the tablet's moving direction by moving the tablet for a predetermined distance; and an oblique plate for making the tablet fall a predetermined distance.

Method for manufacturing a semiconductor device

A semiconductor device is manufactured through steps in which a photoelectric conversion element and an amplifier circuit are formed over a first substrate with a release layer interposed therebetween, and the photoelectric conversion element and the amplifier circuit are separated from the first substrate. Output characteristics of the amplifier circuit are improved and the semiconductor device with high reliability is obtained. A manufacturing method of such semiconductor device includes steps of forming a metal layer having an opening portion over a substrate, forming an insulating layer over the entire surface of the substrate including the opening portion and the metal layer, forming a photoelectric conversion layer in a region which overlaps with the metal layer and is a layer over the insulating layer, forming an amplifier circuit, which amplifies an output current of the photoelectric conversion element by using a thin film transistor, in the opening portion in the metal layer, ...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed. 1. (canceled)2. A method for manufacturing an active matrix display device , comprising steps of:forming a semiconductor layer over a glass substrate;forming a first insulating film over the semiconductor layer;forming a conductive layer on and in contact with the first insulating film;forming a resist over the conductive layer, the resist having a first width;etching the conductive layer by using the resist so as to form a wiring;adding an element selected from an n-type impurity element and a p-type impurity element into the semiconductor layer at a first concentration rate with the wiring and the resist thereover as a first mask;etching both the wiring and the resist so that the resist has a second width, the second width being smaller than the first width; andadding the element into the semiconductor layer at a second concentration rate with the wiring and the resist thereover having the second width as a second mask, the second concentration rate being smaller than the first concentration rate.3. The method for manufacturing an active matrix display device according to claim 2 , wherein the active matrix display device is a liquid crystal display device.4. The method for manufacturing an active matrix display device according to claim 2 , wherein the semiconductor layer is an island shape.5. The method for manufacturing an active matrix display device according to claim 2 , wherein the wiring is a gate electrode.6. The method for manufacturing an active matrix display device according to claim 2 , further comprising a step of activating the element added into the semiconductor layer after ...

Semiconductor device and method of fabricating thereof

To provide means for forming projected and recessed portions for preventing mirror face reflection of a reflecting electrode without increasing steps, in a method of fabricating a reflection type liquid crystal display device, to achieve light scattering performance by providing recessed and projected portions at a surface of a pixel electrode, projected portions 701 and 702 are formed by the same photomask as that in forming TFT to thereby form projected and recessed portions at a surface of a pixel electrode 169.

Tablet conveying apparatus and tablet cutting apparatus

A tablet conveying and cutting apparatus capable of adjusting the position of a tablet is a structure suitable for downsizing. A tablet conveying and cutting apparatus has an arranging device for arranging a long side of the tablet to be perpendicular to the tablet's moving direction by moving the tablet for a predetermined distance; and an oblique plate for making the tablet fall a predetermined distance.

Surface mounting type electronic component

A surface mounted electronic component includes a case and a board mounting part. The board mounting part includes a leg bent in parallel with a printed circuit board at its tip, an outer frame soldered to a land of a mounted part on the board, and a projection disposed in the outer frame and inserted into a hole in the mounted part. The electronic component is mounted on a surface of the printed circuit board in various electronic instruments, and can keep to be mounted on the board tightly even when an external force is applied.

Thin film transistors having source wiring and terminal portion made of the same material as the gate electrodes

There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered structure of a material film containing mainly W, a material film containing mainly Al, and a material film containing mainly Ti to reduce a wiring resistance. A wiring is etched using an IPC etching apparatus. The gate electrode has a taper shape and the width of a region which becomes the taper shape is set to be 1 mum or more.

Semiconductor device and method of fabricating thereof

To provide means for forming projected and recessed portions for preventing mirror face reflection of a reflecting electrode without increasing steps, in a method of fabricating a reflection type liquid crystal display device, to achieve light scattering performance by providing recessed and projected portions at a surface of a pixel electrode, projected portions 701 and 702 are formed by the same photomask as that in forming TFT to thereby form projected and recessed portions at a surface of a pixel electrode 169.

Semiconductor device and manufacturing method thereof

By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.

Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same

The wiring of the present invention has a layered structure that includes a first conductive layer (first layer) having a first width and made of one or a plurality of kinds of elements selected from W and Mo, or an alloy or compound mainly containing the element, a low-resistant second conductive layer (second layer) having a second width smaller than the first width, and made of an alloy or a compound mainly containing Al, and a third conductive layer (third layer) having a third width smaller than the second width, and made of an alloy or compound mainly containing Ti. With this constitution, the present invention is fully ready for enlargement of a pixel portion. At least edges of the second conductive layer have a taper-shaped cross-section. Because of this shape, satisfactory coverage can be obtained.

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

A semiconductor device is manufactured through steps in which a photoelectric conversion element and an amplifier circuit are formed over a first substrate with a release layer interposed therebetween, and the photoelectric conversion element and the amplifier circuit are separated from the first substrate. Output characteristics of the amplifier circuit are improved and the semiconductor device with high reliability is obtained. A manufacturing method of such semiconductor device includes steps of forming a metal layer having an opening portion over a substrate, forming an insulating layer over the entire surface of the substrate including the opening portion and the metal layer, forming a photoelectric conversion layer in a region which overlaps with the metal layer and is a layer over the insulating layer, forming an amplifier circuit, which amplifies an output current of the photoelectric conversion element by using a thin film transistor, in the opening portion in the metal layer, ...

Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same

A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle α in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate.

Fused heterocyclic compound

The present invention provides a fused heterocyclic compound that has CDK 8 and/or CDK 19 inhibitory activity. The present invention provides a compound represented by formula (I) (wherein the symbols are as defined in the description) or a salt thereof.

HETEROARYL COMPOUNDS USEFUL AS INHIBITORS OF SUMO ACTIVATING ENZYME

Disclosed are chemical entities which are compounds of formula (I): 3. The chemical entity of claim 1 , wherein L is —C(R)(R)— claim 1 , —S— claim 1 , —S(O)— claim 1 , —S(O)— claim 1 , —C(O)— claim 1 , —C(═CH)— claim 1 , —C(R)(R)—C(═CH)— claim 1 , —C(R)(R)—C≡C— claim 1 , —C(R)(R)—O— claim 1 , —C(R)(R)—S— claim 1 , —C(R)(R)—N(R)— claim 1 , —C(R)(R)—N(R)—CH— claim 1 , —C(R)(R)—CH— claim 1 , —C(R)(R)—CH—CH— claim 1 , or —C(O)—C(R)(R)—.4. The chemical entity of claim 1 , wherein:{'sub': 1', '2, 'sup': z3', 'z3', 'z3, 'Zis hydrogen, halogen, cyano, R, —S(O)—R, or —S(O)—R;'}{'sup': z3', 'z4, 'sub': '1-4', 'Ris a phenyl, 5- to 7-membered cycloaliphatic, 5- to 7-membered heterocyclyl, or Caliphatic, any of which may be substituted with one or more independently selected R;'}{'sup': z4', 'z5', 'z6', 'z5, 'sub': 1-4', '1-4', '1-4', '1-4', '2', '2, 'Ris hydroxyl, halogen, cyano, Caliphatic, Cfluoroaliphatic, Calkoxy, Cfluoroalkoxy, —N(R), —C(O)R, —C(O)R, 5- or 6-membered cycloaliphatic or heterocyclyl, or a phenyl optionally substituted with one or more independently selected halogens;'}{'sup': 'z5', 'sub': '1-4', 'each occurrence of Ris independently hydrogen or Calkyl; and'}{'sup': 'z6', 'sub': '1-4', 'each occurrence of Ris independently Calkyl.'}5. The chemical entity of claim 4 , wherein Zis hydrogen; halogen; cyano; phenyl optionally substituted with one or more independently selected halogens; 5- to 7-membered cycloaliphatic or heterocyclyl optionally fused to a 6-membered aryl claim 4 , wherein the 5- to 7-membered cycloaliphatic or heterocyclyl optionally fused to a 6-membered aryl is optionally substituted with one or more independently selected halogens; Cfluoroaliphatic; or a Caliphatic group optionally substituted with one or more hydroxyl claim 4 , Calkoxy claim 4 , phenyl optionally substituted with one more independently selected halogens claim 4 , 5- or 6-membered cycloaliphatic claim 4 , 5- or 6-membered heterocyclyl claim 4 , or —N(R).6. The chemical entity ...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

There has been a problem that the manufacturing process is complicated and the number of processes is increased when a TFT with an LDD structure or a TFT with a GOLD structure is formed. In a method of manufacturing a semiconductor device, after low concentration impurity regions (24, 25) are formed in a second doping process, a width of the low concentration impurity region which is overlapped with the third electrode (18c) and a width of the low concentration impurity region which is not overlapped with the third electrode can be freely controlled by a fourth etching process. Thus, in a region overlapped with the third electrode, a relaxation of electric field concentration is achieved and then a hot carrier injection can be prevented. And, in the region which is not overlapped with the third electrode, the off-current value can be suppressed.

Semiconductor device and method of manufacturing the same

The present invention provides the structure and manufacturing method of a semiconductor device that consumes small power even when a screen is made to be larger. A signal wiring line or a part of a gate wiring line is formed from a low resistant material (typically aluminum) and p-channel TFTs are used for a pixel TFT of a pixel portion. The p-channel TFT in the pixel portion has a multi-gate structure in which a plurality of channel formation regions are provided in order to reduce fluctuation in OFF current.

COMMUNICATION SYSTEM

A base station device is configured to set, for each communication terminal device, a radio format for signals transmitted to and received from the communication terminal device. The radio format is set for each communication terminal device in accordance with, for example, a type of use including a moving speed of the communication terminal device. The base station device may be configured to change the radio format for the communication terminal device based on the information about a change in the environment of a radio communication between the communication terminal device and the base station device and a change including the communication terminal device's location. The signals transmitted and received between the base station device and the communication terminal device include radio formats in which at least one of a length of a symbol of the signal and a length of a cyclic prefix in an OFDM scheme differs. 1a plurality of communication terminal devices; anda base station device configuring a cell in which said base station device is capable of radio communication with said communication terminal devices,wherein said base station device is configured to set, for each of said communication terminal devices, a radio format for signals transmitted to and received from said communication terminal device.. A communication system comprising: This application is a continuation of U.S. application Ser. No. 15/518,536 filed Apr. 12, 2017, which is a National Phase of PCT/JP2015/080097 filed on Oct. 26, 2015, and claims priority to Japanese Patent Application No. 2014-223406 filed Oct. 31, 2014. The entire contents of each of which are incorporated herein by reference.The present invention relates to a communication system in which radio communication is performed between a communication terminal device, such as a user equipment device, and a base station device.The 3rd generation partnership project (3GPP), a standard organization regarding the mobile communication ...

NITROGEN-CONTAINING HETEROCYCLIC COMPOUND

The present invention provides a novel compound having a superior activity as an ERR-α modulator and useful as an agent for the prophylaxis or treatment of ERR-α associated diseases. 3. The compound or salt of claim 1 , wherein A is a Caryl group claim 1 , an aromatic heterocyclic group or a Ccycloalkyl group claim 1 , each optionally having substituent(s).4. The compound or salt of claim 1 , wherein the substituent of the cyclic group optionally having substituent(s) for A is selected from(a) a halogen atom,(b) a cyano group,{'sub': '1-6', '(c) a Calkyl group optionally substituted by 1 to 3 halogen atoms,'}{'sub': '1-6', '(d) a Calkoxy group optionally substituted by 1 to 3 halogen atoms,'}(e) a hydroxy group, and(f) a pentafluorosulfanyl group.5. The compound or salt of claim 1 , wherein{'sup': 'a', 'Lis a bond;'}{'sup': 'b', 'sub': 1-3', '1-6, 'Lis a bond or a Calkylene group optionally substituted by 1 to 3 Calkyl groups; and'}{'sup': 'c', 'Lis a bond or —CO—.'}6. The compound or salt of claim 1 , wherein ring G is an azetidine ring claim 1 , a pyrrolidine ring claim 1 , a piperidine ring claim 1 , an azepane ring claim 1 , a 3-azabicyclo[3.1.0]hexane ring claim 1 , a 8-azabicyclo[3.2.1]octane ring claim 1 , a 3-azabicyclo[3.3.1]nonane ring or a 3-azabicyclo[3.3.0]octane ring claim 1 , each optionally having substituent(s).11. (5Z)-5-({1-[2 claim 1 ,4-bis(trifluoromethyl)benzyl]piperidin-4-yl}methylidene)-4-(prop-2-yn-1-ylamino)-1 claim 1 ,3-thiazol-2(5H)-one or a salt thereof.12. (5Z)-5-({1-[2 claim 1 ,4-bis(trifluoromethyl)benzyl]piperidin-4-yl}methylidene)-4-[(2-hydroxy-2-methylpropyl)amino]-1 claim 1 ,3-thiazol-2(5H)-one or a salt thereof.13. (5Z)-5-({1-[2 claim 1 ,4-bis(trifluoromethyl)benzyl]piperidin-4-yl}methylidene)-4-[(3-hydroxy-2 claim 1 ,2-dimethylpropyl)amino]-1 claim 1 ,3-thiazol-2(5H)-one or a salt thereof.14. N-[(5Z)-5-({1-[2 claim 1 ,4-bis(trifluoromethyl)benzyl]piperidin-4-yl}methylidene)-2-oxo-2 claim 1 ,5-dihydro-1 claim 1 ,3-thiazol-4-yl]-N ...

DESULFURIZATION-DENITRATION APPARATUS FOR EXHAUST GAS

Adsorbent dust can be recovered while spraying is prevented. An apparatus is provided with a desulfurization-denitration tower body and an adsorbent discharging device. An entrance louver and an exit louver are provided for forming a packed moving bed of an adsorbent that moves downward inside the tower body, the apparatus has a throttle portion provided with a side panel that is inclined so that a spacing gradually decreases toward a discharging device, the throttle portion being provided between the tower body and the discharging device, and first partitions are provided inside the throttle portion. A second partition extending along the incline direction of the side panel is provided at a predetermined distance from the bottom end of the exit louver above the side panel, and a gap is provided between the bottom end part of the exit louver and the side panel of the throttle portion.

Semiconductor device and method for manufacturing same

In the fabrication of semiconductor devices such as active matrix displays, the need to pattern resist masks in photolithography increases the number of steps in the fabrication process and the time required to complete them and consequently represents a substantial cost. This invention provides a method for forming an impurity region in a semiconductor layer 303 by doping an impurity element into the semiconductor layer self-aligningly using as a mask the upper layer (a second conducting film 306) of a gate electrode formed in two layers. The impurity element is doped into the semiconductor layer through the lower layer of the gate electrode (a first conducting film 305), and through a gate insulating film 304. By this means, an LDD region 313 of a GOLD structure is formed in the semiconductor layer 303.

Semiconductor Device and Fabrication Method Thereof

For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed.

Process for producing a light emitting device

The surface of an anode is made flat by wiping/cleaning of the present invention. Thereafter, an organic compound layer and a cathode are formed to produce a light emitting element. In this way, the distance between the anode and the cathode becomes constant. Therefore, when an electric field is applied to the light emitting element, the current density in the organic compound layer becomes uniform. Thus, it is possible to prevent the deterioration of the organic compound layer and improve the element characteristic thereof.

Package manufacturing method and semiconductor device

A method for manufacturing a package comprises a first step of forming a metal pattern including a frame and a plurality of leads extending inward from the frame, a second step of molding a resin pattern including a first resin portion which holds the plurality of leads from an inner side thereof, and second resin portions which cover bottom surfaces of peripheral portions, adjacent to portions to be removed, in the plurality of leads while exposing bottom surfaces of the portions to be removed in the plurality of leads, so as to hold the plurality of leads from a lower side thereof, and a third step of cutting the plurality of leads into a plurality of first leads and a plurality of second leads by removing the portions to be removed in the plurality of leads while the resin pattern keeps holding the peripheral portions in the plurality of leads.

Multiple-operation switch

A multiple operation switch that provides electric signal in accordance with the angle of tilting an operating rod protruding from the front panel of an electronic apparatus. The switch comprises a lower case provided at the recessed bottom with a lower switching portion formed of a movable contact and a first fixed contact point. A movable contact body is provided with a conductive flange that makes contact, when tilted by the operating rod, in part with at least two of the second fixed contact points disposed on the reverse surface of upper case. Which movable contact body is supported at the conductive flange by a holding member pushed upward by a coil spring provided in the lower case so that it is engaged in a tiltable manner with an upper case. The second fixed contact points and the conductive flange constitute an upper switching portion.

Solid-state image pickup device

A solid-state image pickup device in which no warp occurs in a solid-state image pickup element chip is provided. A solid-state image pickup device, including a solid-state image pickup element chip on which a plurality of solid-state image pickup elements are mounted, a wiring substrate electrically connected to the solid-state image pickup element chip and adapted to transmit signals from each one of a plurality of solid-state image pickup elements, and a protection cap provided on a light incident side of the solid-state image pickup element chip and adapted to protect the solid-state image pickup element chip, is characterized in that the solid-state image pickup element chip is formed on a substrate with a thermal expansion coefficient equal to that of the protection cap, and the substrate and the protection cap are sealed with a sealing resin.

Method of manufacturing semiconductor device

Conventionally, when a TFT provided with an LDD structure or a TFT provided with a GOLD structure is to be formed, there is a problem in that the manufacturing process becomes complicated, which leads to the increase in the number of steps. An electrode formed of a lamination of a first conductive layer (18b) and a second conductive layer (17c), which have different widths from each other, is formed. After the first conductive layer (18b) is selectively etched to form a first conductive layer (18c), a low concentration impurity region (25a) overlapping the first conductive layer (18c) and a low concentration impurity region (25b) not overlapping the first conductive layer 18c are formed by doping an impurity element at a low concentration.

HETEROARYL COMPOUNDS USEFUL AS INHIBITORS OF SUMO ACTIVATING ENZYME

Disclosed are chemical entities which are compounds of formula (I): 3. The chemical entity of claim 1 , wherein L is —C(R)(R)— claim 1 , —S— claim 1 , —S(O)— claim 1 , —S(O)— claim 1 , —C(O)— claim 1 , —C(═CH)— claim 1 , —C(R)(R)—C(═CH)— claim 1 , —C(R)(R)—C≡C— claim 1 , —C(R)(R)—O— claim 1 , —C(R)(R)—S— claim 1 , —C(R)(R)—N(R)— claim 1 , —C(R)(R)—N(R)—CH— claim 1 , —C(R)(R)—CH— claim 1 , —C(R)(R)—CH—CH— claim 1 , or —C(O)—C(R)(R)—.4. The chemical entity of claim 1 , wherein:{'sub': 1', '2, 'sup': z3', 'z3', 'z3, 'Zis hydrogen, halogen, cyano, R, —S(O)—R, or —S(O)—R;'}{'sup': z3', 'z4, 'sub': '1-4', 'Ris a phenyl, 5- to 7-membered cycloaliphatic, 5- to 7-membered heterocyclyl, or Caliphatic, any of which may be substituted with one or more independently selected R;'}{'sup': z4', 'z5', 'z6', 'z5, 'sub': 1-4', '1-4', '1-4', '1-4', '2', '2, 'Ris hydroxyl, halogen, cyano, Caliphatic, Cfluoroaliphatic, Calkoxy, Cfluoroalkoxy, —N(R), —C(O)R, —C(O)R, 5- or 6-membered cycloaliphatic or heterocyclyl, or a phenyl optionally substituted with one or more independently selected halogens;'}{'sup': 'z5', 'sub': '1-4', 'each occurrence of Ris independently hydrogen or Calkyl; and'}{'sup': 'z6', 'sub': '1-4', 'each occurrence of Ris independently Calkyl.'}5. The chemical entity of claim 4 , wherein Zis hydrogen; halogen; cyano; phenyl optionally substituted with one or more independently selected halogens; 5- to 7-membered cycloaliphatic or heterocyclyl optionally fused to a 6-membered aryl claim 4 , wherein the 5- to 7-membered cycloaliphatic or heterocyclyl optionally fused to a 6-membered aryl is optionally substituted with one or more independently selected halogens; Cfluoroaliphatic; or a Caliphatic group optionally substituted with one or more hydroxyl claim 4 , Calkoxy claim 4 , phenyl optionally substituted with one more independently selected halogens claim 4 , 5- or 6-membered cycloaliphatic claim 4 , 5- or 6-membered heterocyclyl claim 4 , or —N(R).6. The chemical entity ...

Data processing system for analytical instrument, and data processing program for analytical instrument

When a user creates a template to be used for the creation of an analysis report, a check result record area can be set at an appropriate location in a basic template. The content of the information and other elements to be placed in the check result record area can also be set. With this function, the check result record area can be set for each report item to be checked, with the following elements arranged in the area: a dropdown list for selecting the check result which indicates acceptance/rejection of the content; a character string in which the date and time of checking and the checker's name are automatically inserted; and a text box for describing the reason for rejection (if rejected). In the checking process, the checker inputs those items of information, whereby the result of the check of the content is electronically recorded for each report item.

Semiconductor device and method of manufacturing the same

The present invention provides the structure and manufacturing method of a semiconductor device that consumes small power even when a screen is made to be larger. A signal wiring line or a part of a gate wiring line is formed from a low resistant material (typically aluminum) and p-channel TFTs are used for a pixel TFT of a pixel portion. The p-channel TFT in the pixel portion has a multi-gate structure in which a plurality of channel formation regions are provided in order to reduce fluctuation in OFF current.

Wiring and manufacturing method thereof, semiconductor device comprising said wiring, and dry etching method

A dry etching method for forming tungsten wiring having a tapered shape and having a large specific selectivity with respect to a base film is provided. If the bias power density is suitably regulated, and if desired portions of a tungsten thin film are removed using an etching gas having fluorine as its main constituent, then the tungsten wiring having a desired taper angle can be formed.

Semiconductor device and manufacturing method thereof

By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.

Communication system

A base station device is configured to set, for each communication terminal device, a radio format for signals transmitted to and received from the communication terminal device. The radio format is set for each communication terminal device in accordance with, for example, a type of use including a moving speed of the communication terminal device. The base station device may be configured to change the radio format for the communication terminal device based on the information about a change in the environment of a radio communication between the communication terminal device and the base station device and a change including the communication terminal device's location. The signals transmitted and received between the base station device and the communication terminal device include radio formats in which at least one of a length of a symbol of the signal and a length of a cyclic prefix in an OFDM scheme differs.

Rotary encoder and multi-operational electronic component using the same

The disclosed rotary encoder includes contact substrate 31 and movable contact plate 32. Substrate 31 contains three fan-shaped conductive layers 34A, 34B, and 34C on positions having a same distance from the center of substrate 31. On the other hand, movable contact plate 32 retains three elastic contacts 36A, 36B, 36C, and rotates. The three contacts have continuity with each other and disposed at positions with a same distance from the center of substrate 31, spaced at a radial angle of 120°. When contact plate 32 is rotated, any two out of three elastic contacts 36A, 36B, and 36C consecutively contact with any two out of three conductive layers 34A, 34B, and 34C. Through the continuity, an electric signal is led out from terminals 35A, 35B, and 35C.

Etching method and etching device

An etching method and a device therefor are provided to detect the etching end point with high accuracy and reproducibility. In an etching method and device, in dry etching, a variation of a self-bias voltage as a time elapses is measured, and a time where a differentiation value becomes 0 when the variation of the self-bias voltage is differentiated is regarded as an end point.

Electronic part and its manufacturing method

An electronic part comprising: a functional element chip on which a functional element has been formed; a wiring member which is electrically connected to the functional element chip; and a protecting member for protecting the functional element chip, wherein the wiring member has a stair shape and is electrically connected to the functional element chip, so that an electronic part having a functional element chip which is hard to be distorted. An electronic part comprising: a functional element chip on which a functional element has been formed; and a protecting member for protecting the functional element chip, wherein a spacer is sandwiched between the functional element chip and the protecting member, so that a constant gap between a functional element chip and a protecting cap is easily held.

Electroluminescence display device

Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured to emit light through the counter substrate, and a space between the substrate and the counter substrate is filled with a filler. The electroluminescence device is featured by the tapered side surface of a gate electrode of the thin film transistor.

Desulfurization-denitration apparatus for exhaust gas

Adsorbent dust can be recovered while spraying is prevented. An apparatus is provided with a desulfurization-denitration tower body and an adsorbent discharging device. An entrance louver and an exit louver are provided for forming a packed moving bed of an adsorbent that moves downward inside the tower body, the apparatus has a throttle portion provided with a side panel that is inclined so that a spacing gradually decreases toward a discharging device, the throttle portion being provided between the tower body and the discharging device, and first partitions are provided inside the throttle portion. A second partition extending along the incline direction of the side panel is provided at a predetermined distance from the bottom end of the exit louver above the side panel, and a gap is provided between the bottom end part of the exit louver and the side panel of the throttle portion.

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

A semiconductor device is manufactured through steps in which a photoelectric conversion element and an amplifier circuit are formed over a first substrate with a release layer interposed therebetween, and the photoelectric conversion element and the amplifier circuit are separated from the first substrate. Output characteristics of the amplifier circuit are improved and the semiconductor device with high reliability is obtained. A manufacturing method of such semiconductor device includes steps of forming a metal layer having an opening portion over a substrate, forming an insulating layer over the entire surface of the substrate including the opening portion and the metal layer, forming a photoelectric conversion layer in a region which overlaps with the metal layer and is a layer over the insulating layer, forming an amplifier circuit, which amplifies an output current of the photoelectric conversion element by using a thin film transistor, in the opening portion in the metal layer, ...

Method of fabricating a light emitting device

There is provided an inexpensive light emitting device and an electronic instrument using the same. In this invention, photolithography steps relating to manufacture of a transistor are reduced, so that the yield of the light emitting device is improved and the manufacturing period thereof is shortened. A feature is that a gate electrode is formed of conductive films of plural layers, and by using the selection ratio of those at the time of etching, the concentration of an impurity region formed in an active layer is adjusted.

Semiconductor Device and Fabrication Method Thereof

For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed.

Semiconductor device and fabrication method thereof

For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed.

Semiconductor device and method for manufacturing same

In the fabrication of semiconductor devices such as active matrix displays, the need to pattern resist masks in photolithography increases the number of steps in the fabrication process and the time required to complete them and consequently represents a substantial cost. This invention provides a method for forming an impurity region in a semiconductor layer 303 by doping an impurity element into the semiconductor layer self-aligningly using as a mask the upper,layer (a second conducting film 306) of a gate electrode formed in two layers. The impurity element is doped into the semiconductor layer through the lower layer of the gate electrode (a first conducting film 305), and through a gate insulating film 304. By this means, an LDD region 313 of a GOLD structure is formed in the semiconductor layer 303.

Electroluminescence display device

Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured to emit light through the counter substrate, and a space between the substrate and the counter substrate is filled with a filler. The electroluminescence device is featured by the tapered side surface of a gate electrode of the thin film transistor.

Electric connector whose shield plate is equipped with anti-bending means for its pressfit pieces

Disclosed is an improved shielded electric connector comprising a connector body having contact pieces embedded therein and an “L”-shaped shield plate applied to the connector body with its horizontal and vertical sections lying on the top surface and rear side of the connector body, the shield plate having press-fit portions integrally connected to the lower end of the vertical section. The shield plate has thrust shoulders formed at its horizontal-to-vertical transition to push the press-fit portions. The electric connector can be fixed to a printed circuit board by applying a push to the thrust shoulders of the shield plate, thereby pushing the press-fit portions of the shield plate right in the through holes in exact linear-alignment with the through holes. Thus, the strong thrust can be transmitted to each press-fit portion without any possibility of causing it to be deformed or bent.

Drying machine

A washing/drying machine has objects to shorten a time required for a washing operation, to improve a heat exchange capability in a radiator and an evaporator, and to shorten a drying time for things to be dried, and comprises: an accommodating chamber in which things to be washed (things to be dried) are accommodated and in which a drying operation of the things to be washed is performed; a refrigerant circuit in which a compressor, a gas cooler, a decompression device, an evaporator and the like are successively connected to one another in an annular form via a piping and in which carbon dioxide is used as a refrigerant and which has a supercritical pressure on a high pressure side thereof; and blower means for blowing air which has exchanged heat with the radiator into the accommodating chamber to allow the air passed through the accommodating chamber to exchange the heat with the evaporator, wherein the blower means constitutes a circulation direction of the air passed through the gas ...

Electric connector provided with a shield plate equipped with thrust shoulders

A shielded electrical connector includes a connector body having contact pieces embedded therein and an "L"-shaped shield plate applied to the connector body with its horizontal and vertical sections lying on the top surface and rear side of the connector body, the shield plate having press-fit portions integrally connected to the lower end of the vertical section. The shield plate has thrust shoulders formed at its horizontal-to-vertical transition for use in pushing the press-fit portions. The electrical connector can be fixed to a printed circuit board by applying a push to the thrust shoulders of the shield plate, thereby pushing the press-fit portions of the shield plate right in the through holes in exact linear-alignment with the through holes. Thus, a strong thrust can be transmitted to each press-fit portion without causing it to be deformed or bent.

Semiconductor device with tapered gate and insulating film

In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and along with improving the operating characteristics and the reliability of the semiconductor device, the manufacturing cost is reduced and the yield is increased by reducing the number of process steps. A semiconductor device has a semiconductor layer, an insulating film formed contacting the semiconductor layer, and a gate electrode having a tapered portion on the insulating film, in the semiconductor device, the semiconductor layer has a channel forming region, a first impurity region for forming a source region or a drain region and containing a single conductivity type impurity element, and a second impurity region for forming an LDD region contacting the channel forming region, a portion of the second impurity region is formed overlapping a gate electrode, and the concentration of the single conductivity type impurity element contained in the second impurity region becomes larger with distance from the channel forming region.

Light-emitting module, light-emitting panel, and light-emitting device

One embodiment of the present invention relates to a light-emitting device comprising an insulating surface; a lower electrode over the insulating surface; a protrusion over the insulating surface having a sidewall sloping toward the lower electrode; a light-transmitting partition overlapping with an end portion of the lower electrode and the sidewall of the protrusion; and a light-emitting element including the lower electrode, an upper electrode overlapping with the lower electrode, and a layer containing a light-emitting organic compound between the lower electrode and the upper electrode. In the light-emitting device, the sidewall of the protrusion can reflect light emitted from the light-emitting element. As a result, the light-emitting device that has reduced power consumption is provided.

Washing/drying machine

There is disclosed a washing/drying machine having a purpose of shortening a time required for a washing operation and improving an operation efficiency, and comprising: an inner drum in which things to be washed are accommodated and in which a washing operation of the things to be washed and a drying operation after end of the washing operation are performed; a water supply passage for supplying water into the inner drum and a drainage passage for discharging the water from the inner drum in the washing operation; a refrigerant circuit in which a compressor, a gas cooler, an expansion valve, an evaporator and the like are successively connected to one another in an annular form via a piping and in which carbon dioxide is used as a refrigerant; and a blower for blowing air which has exchanged heat with the gas cooler into the inner drum to allow the air passed through the inner drum to exchange the heat with the evaporator in the drying operation.

ELECTRONIC APPLIANCE INCLUDING TRANSISTOR HAVING LDD REGION

A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film.

SOLID-STATE IMAGING APPARATUS AND DIGITAL CAMERA

The solid-state imaging apparatus illustrates a solid-state imaging element having a light receiving portion; a package which contains the solid-state imaging element; a light-transmissive member which is provided above the solid-state imaging element; and a partitioning member which is fixed to the package to isolate the light receiving portion of the solid-state imaging element from the surrounding portion of the light receiving portion of the solid-state imaging element.

Light-Emitting Device and Manufacturing Method Thereof

A highly reliable light-emitting device, a light-emitting device which can be formed without using a metal mask, or a light-emitting device in which a voltage drop due to the resistance of an upper electrode layer is suppressed is provided. When an EL film is formed over a conductive connection electrode layer having an uneven shape, a surface of the conductive connection electrode layer cannot be fully covered. Subsequently, a conductive film to be an upper electrode layer of an EL element is formed thereover; thus, a region in contact with the conductive connection electrode layer is formed. Further, a structure is provided in a position on a counter substrate, which overlaps with the conductive connection electrode layer, and then substrates are bonded to each other so that the structure is physically in contact with the upper electrode layer over the conductive connection electrode layer. 1. A light-emitting device comprising:a first electrode layer and a conductive connection electrode layer comprising an uneven shape over a first substrate;a layer containing a light-emitting organic compound over the first electrode layer and the conductive connection electrode layer;a second electrode layer over the layer containing the light-emitting organic compound;a structure over the second electrode layer; anda second substrate over the structure,wherein the second electrode layer is interposed between the conductive connection electrode layer and the structure, andwherein the second electrode layer is electrically connected to the conductive connection electrode layer.2. The light-emitting device according to claim 1 , further comprising:a wiring between the first substrate and the conductive connection electrode layer,wherein the second electrode layer is electrically connected to the wiring.3. The light-emitting device according to claim 1 ,wherein the structure comprises a projection, andwherein the structure has conductivity.4. The light-emitting device according ...

GRINDING DEVICE

A grinding device is provided which includes a dressing mechanism for dressing the grinder which is simple in structure and low in manufacturing cost. The grinding device includes a dresser head () provided at the front end of a spindle (), and a dresser tool () mounted on the dresser head () for dressing the grinder (), and the dresser tool () is configured such that while the workpiece (W) is being ground by the grinder (), the dresser tool () is kept out of contact with the grinder (), and while the grinder () is being dressed by the dresser tool (), the chuck () is kept out of contact with the grinder (). Thus it is possible to press the dresser tool () against the grinder () using the relative movement between the spindle () and the grinder shaft (). The dresser head () can be rotated by rotating the spindle (). The grinder () can thus be easily dressed by a dressing structure that is simple in structure without the need to mount the dresser tool () every time the grinder is to be dressed. 1. A grinding device comprising a spindle which is configured to be rotated , a chuck mounted on a front end of the spindle for fixing a workpiece , a grinder shaft having a grinder head , and a grinder mounted on the grinder head , wherein the spindle and the grinder shaft are movable relative to each other to a position where the workpiece can be ground by the grinder with the grinder fixed in position to the chuck , characterized in that the grinding device further comprises a dresser head provided at the front end of the spindle , and a dresser tool mounted on the dresser head for dressing the grinder , and that the dresser tool is configured such that while the workpiece is being ground by the grinder , the dresser tool is kept out of contact with the grinder , and while the grinder is being dressed by the dresser tool , the chuck is kept out of contact with the grinder.2. The grinding device of claim 1 , wherein the chuck and the dresser head are movable relative to ...

Thin film transistors having tapered gate electrode and taped insulating film

TFTs arranged in various circuits have structures that are suited for circuit functions, in order to improve operation characteristics and reliability of the semiconductor device, to lower consumption of electric power, to decrease the number of steps, to lower the cost of production and to improve the yield. The gradient of concentration of impurity element for controlling the conduction type in the LDD regions 622 and 623 of the TFT is such that the concentration increases toward the drain region. For this purpose, a tapered gate electrode 607 and a tapered gate-insulating film 605 are formed, and the ionized impurity element for controlling the conduction type is added to the semiconductor layer through the gate-insulating film 605.

Method and apparatus for polishing workpiece

A workpiece such as a semiconductor wafer is held by a top ring, and a lower surface of the workpiece is polished to a flat mirror finish by being pressed against a polishing surface of the turntable while the top ring and the turntable are rotated. While the workpiece is being polished, at least one of the pressure and the flow rate of a fluid which is supplied to an upper surface of the workpiece is detected. When at least one of the detected pressure and the detected flow rate changes, the polishing of the workpiece is stopped.

Semiconductor Device and Manufacturing Method Thereof

By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.

Multi-directional operating switch

Operating body 12 is supported by a pair of bearing portions in case 1 such that first shaft 13 is pivotable and second shaft 14 is pivotable and vertically movable in a low range. Operating part 12A is provided on plate part 12B of operating body 12 above the central axis of pivot. Self-restoring first push switch 2 is provided to be in contact with the bottom face of the plate part on the side of second shaft 14 on the central axis of pivot. Self-restoring second push switch 3 and third push switch 4 are provided to in contact with the bottom face of the plate part on the side of first shaft 13 in positions symmetrical with respect to the central axis of pivot. This structure realizes a multidirectional operating switch that allows independent operation of a plurality of switches using one operating part.

Semiconductor display device and manufacturing method thereof

A highly reliable semiconductor display device is provided. The semiconductor display device has a channel forming region, an LDD region, and a source region and a drain region in a semiconductor layer, and the LDD region overlaps with a first gate electrode, sandwiching a gate insulating film.

Portable terminal and display method

A portable terminal has a first display and a second display, and is transformable between a first form and a second form. The first form is formed by arranging the first display and the second display to form a combined display, and the second form is formed by overlaying the second display upon the first display. In the first form displaying is performed on the combined display and in the second form displaying is performed on only the second display. The portable terminal detects a tilt of the portable terminal at a primary surface of the second display. When the portable terminal is in the first form, the tilt that is detected is corrected and displaying is performed based on the corrected tilt. When the portable terminal is in the second form, displaying is performed based on the detected tilt.

Communication system, base station, and communication terminal for controlling interference from neighboring cells

A base station device is configured to set, for each communication terminal device, a radio format for signals transmitted to and received from the communication terminal device. The radio format is set for each communication terminal device in accordance with, for example, a type of use including a moving speed of the communication terminal device. The base station device may be configured to change the radio format for the communication terminal device based on the information about a change in the environment of a radio communication between the communication terminal device and the base station device and a change including the communication terminal device's location. The signals transmitted and received between the base station device and the communication terminal device include radio formats in which at least one of a length of a symbol of the signal and a length of a cyclic prefix in an OFDM scheme differs.

Drying machine

An object is to provide a drying machine capable of maintaining air discharged into a housing chamber while efficiently drying a matter to be dried in a short time. A drying machine provided with a housing chamber which houses the matter to be dried, and executing a drying operation of the matter to be dried in the housing chamber comprises: a gas cooler; an evaporator; a blower fan; an air circulation path for discharging air heated by the gas cooler into the housing chamber by the blower fan, sending the air passed through the housing chamber into the evaporator, and circulating the air in the gas cooler; and a closable outside air introduction port for mixing outside air with the air circulating in the air circulation path.

Package manufacturing method and semiconductor device

A method for manufacturing a package comprises a first step of forming a metal pattern including a frame and a plurality of leads extending inward from the frame, a second step of molding a resin pattern including a first resin portion which holds the plurality of leads from an inner side thereof, and second resin portions which cover bottom surfaces of peripheral portions, adjacent to portions to be removed, in the plurality of leads while exposing bottom surfaces of the portions to be removed in the plurality of leads, so as to hold the plurality of leads from a lower side thereof, and a third step of cutting the plurality of leads into a plurality of first leads and a plurality of second leads by removing the portions to be removed in the plurality of leads while the resin pattern keeps holding the peripheral portions in the plurality of leads.

Method of forming thin film transistors having tapered gate electrode and curved insulating film

TFTs arranged in various circuits have structures that are suited for circuit functions, in order to improve operation characteristics and reliability of the semiconductor device, to lower consumption of electric power, to decrease the number of steps, to lower the cost of production and to improve the yield. The gradient of concentration of impurity element for controlling the conduction type in the LDD regions 622 and 623 of the TFT is such that the concentration increases toward the drain region. For this purpose, a tapered gate electrode 607 and a tapered gate-insulating film 605 are formed, and the ionized impurity element for controlling the conduction type is added to the semiconductor layer through the gate-insulating film 605.

Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same

A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle alpha in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate.

Semiconductor device and manufacturing method thereof

There has been a problem that the manufacturing process is complicated and the number of processes is increased when a TFT with an LDD structure or a TFT with a GOLD structure is formed. In a method of manufacturing a semiconductor device, after low concentration impurity regions ( 24, 25 ) are formed in a second doping process, a width of the low concentration impurity region which is overlapped with the third electrode ( 18 c) and a width of the low concentration impurity region which is not overlapped with the third electrode can be freely controlled by a fourth etching process. Thus, in a region overlapped with the third electrode, a relaxation of electric field concentration is achieved and then a hot carrier injection can be prevented. And, in the region which is not overlapped with the third electrode, the off-current value can be suppressed.

Semiconductor device having a gate insulting film with thick portions aligned with a tapered gate electrode

By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.

Tablet conveying apparatus and tablet cutting apparatus

A tablet conveying and cutting apparatus capable of adjusting the position of a tablet is a structure suitable for downsizing. A tablet conveying and cutting apparatus has an arranging device for arranging a long side of the tablet to be perpendicular to the tablet's moving direction by moving the tablet for a predetermined distance; and an oblique plate for making the tablet fall a predetermined distance.

Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same

A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle a in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate.

Semiconductor device and manufacturing method thereof

There has been a problem that the manufacturing process is complicated and the number of processes is increased when a TFT with an LDD structure or a TFT with a GOLD structure is formed. In a method of manufacturing a semiconductor device, after low concentration impurity regions (24, 25) are formed in a second doping process, a width of the low concentration impurity region which is overlapped with the third electrode (18c) and a width of the low concentration impurity region which is not overlapped with the third electrode can be freely controlled by a fourth etching process. Thus, in a region overlapped with the third electrode, a relaxation of electric field concentration is achieved and then a hot carrier injection can be prevented. And, in the region which is not overlapped with the third electrode, the off-current value can be suppressed.

Processing method utilizing an apparatus to be sealed against workpiece

A processing method is performed for processing a workpiece such as a semiconductor wafer. The processing method utilizes an apparatus comprising a cover for covering a portion of a surface, to be processed, of a workpiece, a process chamber formed by the cover and the surface, to be processed, of the workpiece, and a sealing portion provided between the cover and the surface of the workpiece for sealing the process chamber.

Processing apparatus to be sealed against workpiece

A processing apparatus is used for processing a workpiece such as a semiconductor wafer. The processing apparatus comprises a cover for covering a portion of a surface, to be processed, of a workpiece, a process chamber formed by the cover and the surface, to be processed, of the workpiece, and a sealing portion provided between the cover and the surface of the workpiece for sealing the process chamber.

Semiconductor display device and manufacturing method thereof

A highly reliable semiconductor display device is provided. The semiconductor display device has a channel forming region, an LDD region, and a source region and a drain region in a semiconductor layer, and the LDD region overlaps with a first gate electrode, sandwiching a gate insulating film.

Method of manufacturing semiconductor device

Conventionally, when a TFT provided with an LDD structure or a TFT provided with a GOLD structure is to be formed, there is a problem in that the manufacturing process becomes complicated, which leads to the increase in the number of steps. An electrode formed of a lamination of a first conductive layer (18b) and a second conductive layer (17c), which have different widths from each other, is formed. After the first conductive layer (18b) is selectively etched to form a first conductive layer (18c), a low concentration impurity region (25a) overlapping the first conductive layer (18c) and a low concentration impurity region (25b) not overlapping the first conductive layer 18c are formed by doping an impurity element at a low concentration.

Analysis information management system

An analysis data collector stores data acquired with an analytical instrument in a file to which a data ID has been given, and registers the file in a database. A log information collector registers, in the database, log information which shows various operations on each analytical instrument or client terminal, state of the device or the like. After data files are selected, a command to create an audit trail is issued, whereupon an audit trail information extractor collects information corresponding to those data files. The audit trail information extractor extracts each piece of log information containing the data ID and pieces of log information which contain the device ID and user ID and were obtained within a time range from login to logout including the date and time of registration. An audit trail creator creates an audit trail by organizing the log information in time-series order, and registers it.

Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same

The wiring of the present invention has a layered structure that includes a first conductive layer (first layer) having a first width and made of one or a plurality of kinds of elements selected from W and Mo, or an alloy or compound mainly containing the element, a low-resistant second conductive layer (second layer) having a second width smaller than the first width, and made of an alloy or a compound mainly containing Al, and a third conductive layer (third layer) having a third width smaller than the second width, and made of an alloy or compound mainly containing Ti. With this constitution, the present invention is fully ready for enlargement of a pixel portion. At least edges of the second conductive layer have a taper-shaped cross-section. Because of this shape, satisfactory coverage can be obtained.

Semiconductor device and method for manufacturing the same

In the fabrication of semiconductor devices such as active matrix displays, the need to pattern resist masks in photolithography increases the number of steps in the fabrication process and the time required to complete them and consequently represents a substantial cost. This invention provides a method for forming an impurity region in a semiconductor layer 303 by doping an impurity element into the semiconductor layer self-aligningly using as a mask the upper layer (a second conducting film 306) of a gate electrode formed in two layers. The impurity element is doped into the semiconductor layer through the lower layer of the gate electrode (a first conducting film 305), and through a gate insulating film 304. By this means, an LDD region 313 of a GOLD structure is formed in the semiconductor layer 303.

Semiconductor Device and Manufacturing Method Thereof

By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer. 1. (canceled)2. A semiconductor device comprising a transistor , the transistor comprising:a semiconductor layer including a pair of LDD regions, a channel region between the pair of LDD regions, and source and drain regions;an insulating layer over the semiconductor layer; anda gate electrode over the insulating layer, the gate electrode including tapered side surfaces;wherein the insulating layer includes a first region overlapping the channel region and a second region overlapping one of the source and drain regions, andwherein a thickness of the first region is thicker than the second region.3. The semiconductor device according to claim 2 , further comprising:an interlayer insulating layer over the gate electrode; anda pixel electrode over the interlayer insulating layer, the pixel electrode electrically connected to the semiconductor layer.4. The semiconductor device according to claim 3 , further comprising:a wiring over the interlayer insulating layer, the wiring is in contact with one of the ...

LIGHT-EMITTING MODULE, LIGHT-EMITTING PANEL, AND LIGHT-EMITTING DEVICE

One embodiment of the present invention relates to a light-emitting device comprising an insulating surface; a lower electrode over the insulating surface; a protrusion over the insulating surface having a sidewall sloping toward the lower electrode; a light-transmitting partition overlapping with an end portion of the lower electrode and the sidewall of the protrusion; and a light-emitting element including the lower electrode, an upper electrode overlapping with the lower electrode, and a layer containing a light-emitting organic compound between the lower electrode and the upper electrode. In the light-emitting device, the sidewall of the protrusion can reflect light emitted from the light-emitting element. As a result, the light-emitting device that has reduced power consumption is provided. 1. A light-emitting device comprising:an insulating surface;a lower electrode over the insulating surface;a protrusion over the insulating surface, the protrusion comprising a sidewall sloping toward the lower electrode;a partition overlapping with an end portion of the lower electrode and the sidewall of the protrusion; the lower electrode;', 'an upper electrode overlapping with the lower electrode; and', 'a layer comprising a light-emitting organic compound between the lower electrode and the upper electrode; and, 'a light-emitting element comprisinga counter substrate over the light-emitting element,wherein the sidewall of the protrusion reflects light emitted from the light-emitting element.2. The light-emitting device according to claim 1 , wherein the sidewall of the protrusion comprises a surface sloping toward the lower electrode at an angle greater than or equal to 30° and less than or equal to 75°.3. The light-emitting device according to claim 1 ,wherein the lower electrode comprises a reflective film, andwherein the sidewall of the protrusion comprises the same material as the reflective film.4. The light-emitting device according to claim 1 , wherein the ...

Method of fabricating a light emitting device

There is provided an inexpensive light emitting device and an electronic instrument using the same. In this invention, photolithography steps relating to manufacture of a transistor are reduced, so that the yield of the light emitting device is improved and the manufacturing period thereof is shortened. A feature is that a gate electrode is formed of conductive films of plural layers, and by using the selection ratio of those at the time of etching, the concentration of an impurity region formed in an active layer is adjusted.

Semiconductor device and manufacturing method thereof

By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.

Fused heterocyclic compound

Provided is a compound represented by the following formula, or a salt thereof: [wherein each symbol is as defined herein].

Semiconductor display device and manufacturing method thereof

A highly reliable semiconductor display device is provided. The semiconductor display device has a channel forming region, an LDD region, and a source region and a drain region in a semiconductor layer, and the LDD region overlaps with a first gate electrode, sandwiching a gate insulating film.

Drying machine

A washing/drying machine has objects to shorten a time required for a washing operation, to improve a heat exchange capability in a radiator and an evaporator, and to shorten a drying time for things to be dried, and comprises: an accommodating chamber in which things to be washed (things to be dried) are accommodated and in which a drying operation of the things to be washed is performed; a refrigerant circuit in which a compressor, a gas cooler, a decompression device, an evaporator and the like are successively connected to one another in an annular form via a piping and in which carbon dioxide is used as a refrigerant and which has a supercritical pressure on a high pressure side thereof; and blower means for blowing air which has exchanged heat with the radiator into the accommodating chamber to allow the air passed through the accommodating chamber to exchange the heat with the evaporator, wherein the blower means constitutes a circulation direction of the air passed through the gas ...

Metal Wiring and Method of Manufacturing the Same, and Metal Wiring Substrate and Method of Manufacturing the Same

A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle α in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate. 1. A metal wiring comprising a conductive layer comprising at least one selected from the group consisting of a tungsten film , a metal compound film with a tungsten compound as its main ingredient , and a metal alloy film with a tungsten alloy as its main ingredient ,wherein edges of the conductive film are tapered so as to have a taper angle α of 5 to 85°.2. A wiring according to claim 1 , wherein the metal alloy film is an alloy film of tungsten and one or more kinds of elements selected from the group consisting of Ta claim 1 , Ti claim 1 , Mo claim 1 , Cr claim 1 , Nb claim 1 , Si claim 1 , Sc claim 1 , and Nd.3. A wiring according to claim 1 , wherein the metal compound film is an tungsten nitride film.4. A metal wiring comprising a conductive layer comprising at least one selected from the group consisting of an aluminum film claim 1 , a metal compound film with an aluminum compound as its main ingredient claim 1 , and a metal alloy film with an aluminum alloy as its main ingredient claim 1 ,wherein edges of the conductive film are tapered so as to have a taper angle α of 5 to 85°.5. A wiring according to claim 4 , wherein the metal alloy film is an alloy film of aluminum and one or more kinds of elements selected from the group consisting of Ta claim 4 , Ti claim 4 , Mo ...

Drying apparatus

A drying apparatus having a purpose of shortening a drying time of laundry, comprising an accommodating chamber in which the laundry is accommodated, and executing a washing operation of the laundry and a drying operation after end of the washing operation in the accommodating chamber, the machine comprising: a refrigerant circuit in which a compressor, a gas cooler, an expansion valve, and an evaporator are successively connected to one another in an annular form via a piping; an air circulation path for discharging air which has exchanged heat with the gas cooler into the accommodating chamber by a blower to exchange the heat of the air passed through the accommodating chamber with the evaporator; and a control device for operating the compressor and the blower to perform the drying operation, wherein the control device starts the operation of the compressor before entering the drying operation.

Semiconductor device and manufacturing method thereof

By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.

Semiconductor Device and Manufacturing Method Thereof

There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered structure of a material film containing mainly W, a material film containing mainly Al, and a material film containing mainly Ti to reduce a wiring resistance. A wiring is etched using an IPC etching apparatus. The gate electrode has a taper shape and the width of a region which becomes the taper shape is set to be 1 μm or more. 1. A semiconductor device comprising:a semiconductor layer over an insulating surface;an insulating film over the semiconductor layer;a gate electrode over the insulating film; anda source wiring over the insulating film,wherein the source wiring includes a laminate structure of a first conductive film on the insulating film, a second conductive film on the first conductive film, and a third conductive film on the second conductive film,wherein the first conductive film comprises at least one selected from the group consisting of Ta, W, Ti, Al, Cu and Mo, andwherein the gate electrode and the source wiring have a taper structure.2. The semiconductor device according to claim 1 , wherein the second conductive film comprises at least one selected from the group consisting of Ta claim 1 , W claim 1 , Ti claim 1 , Al claim 1 , Cu and Mo.3. The semiconductor device according to claim 1 , wherein the second conductive film comprises an alloy of Al and Ti.4. The semiconductor device according to claim 1 , wherein the second conductive film comprises an alloy of Al and Si.5. The semiconductor device according to claim 1 , wherein the third conductive film comprises at least one selected from the group consisting of Ta claim 1 , W claim 1 , Ti claim 1 , Al claim 1 , Cu and Mo.6. The semiconductor device according to claim 1 , wherein the third conductive film ...

Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same

A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle α in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate.

Electroluminescence display device

Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured to emit light through the counter substrate, and a space between the substrate and the counter substrate is filled with a filler. The electroluminescence device is featured by the tapered side surface of a gate electrode of the thin film transistor.

Dryer

An object in a drier is to reduce a cooling time after completion of a drying operation and improve operation efficiency. The dryer comprises a storage room to accommodate a drying target and performs the drying operation and a cooling operation after completion of the drying operation for the drying target in the storage room. The dryer comprises: a refrigerant circuit configured by sequentially connecting, with a pipe in a circular form, a compressor, a radiator, a pressure reducing device, an evaporator and the like; an air circulation path for circulating, by an air blower, air from the radiator into the evaporator through the storage room; and an external radiator provided outside the air circulation path, wherein in the drying operation, a refrigerant discharged from the compressor flows to the radiator to release heat, and is pressure reduced by the pressure reducing device, and is then evaporated by the evaporator, and in the cooling operation, the refrigerant discharged from the ...

Semiconductor device and fabrication method thereof

For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed.

Differential apparatus

A differential apparatus including a rotating body configured to rotate around a rotation axis to transmit power to a differential mechanism, and a groove formed on the rotating body and configured to guide an oil scooped up by rotation of the rotating body inward in a rotation radial direction of the rotating body.

Substituted pyrazolo[1,5-a]pyrazines for spinal muscular atrophy

A prophylactic or therapeutic agent for spinal muscular atrophy according to the present invention includes a compound represented by the formula (I) or a salt thereof: the variables are described herein.

Electronic part and its manufacturing method

An electronic part comprising: a functional element chip on which a functional element has been formed; a wiring member which is electrically connected to the functional element chip; and a protecting member for protecting the functional element chip, wherein the wiring member has a stair shape and is electrically connected to the functional element chip, so that an electronic part having a functional element chip which is hard to be distorted. An electronic part comprising: a functional element chip on which a functional element has been formed; and a protecting member for protecting the functional element chip, wherein a spacer is sandwiched between the functional element chip and the protecting member, so that a constant gap between a functional element chip and a protecting cap is easily held.

Process for producing a light emitting device

The surface of an anode is made flat by wiping/cleaning of the present invention. Thereafter, an organic compound layer and a cathode are formed to produce a light emitting element. In this way, the distance between the anode and the cathode becomes constant. Therefore, when an electric field is applied to the light emitting element, the current density in the organic compound layer becomes uniform. Thus, it is possible to prevent the deterioration of the organic compound layer and improve the element characteristic thereof.

Semiconductor device and manufacturing method thereof

By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.

Method for manufacturing a semiconductor device

A semiconductor device is manufactured through steps in which a photoelectric conversion element and an amplifier circuit are formed over a first substrate with a release layer interposed therebetween, and the photoelectric conversion element and the amplifier circuit are separated from the first substrate. Output characteristics of the amplifier circuit are improved and the semiconductor device with high reliability is obtained. A manufacturing method of such semiconductor device includes steps of forming a metal layer having an opening portion over a substrate, forming an insulating layer over the entire surface of the substrate including the opening portion and the metal layer, forming a photoelectric conversion layer in a region which overlaps with the metal layer and is a layer over the insulating layer, forming an amplifier circuit, which amplifies an output current of the photoelectric conversion element by using a thin film transistor, in the opening portion in the metal layer, ...

PROPHYLACTIC OR THERAPEUTIC AGENT FOR CANCER

A compound represented by the formula (I): 4. The compound according to claim 1 , wherein R claim 1 , R claim 1 , and Rare each a hydrogen atom claim 1 , and Ris a hydroxyl group substituted by a Calkyl group optionally having substituent(s) claim 1 , or a salt thereof.5. The compound according to claim 1 , wherein X is —O— claim 1 , or a salt thereof.6. The compound according to claim 1 , wherein Ris Caryl optionally having substituent(s) claim 1 , or a salt thereof.7. The compound according to claim 1 , wherein Ris a hydrogen atom claim 1 , or a salt thereof.8. (5Z)-5-({4-[2-Chloro-4-(trifluoromethyl)phenoxy]-3-methoxyphenyl}methylidene)-4-{[2-(diethylamino)ethyl]amino}-1 claim 1 ,3-thiazol-2(5H)-one or a salt thereof.9. 4-(2-Methoxy-4-{(Z)-[4-{[2-(1-methylpyrrolidin-2-yl)ethyl]amino}-2-oxo-1 claim 1 ,3-thiazol-5(2H)-ylidene]methyl}phenoxy)naphthalene-1-carbonitrile or a salt thereof.10. 4-{4-[(Z)-{4-[(2-Hydroxy-2-methylpropyl)amino]-2-oxo-1 claim 1 ,3-thiazol-5(2H)-ylidene}methyl]-2-methoxyphenoxy}-3-(trifluoromethyl)benzonitrile or a salt thereof.11. 4-{4-[(Z)-(1-Ethyl-5-imino-3-methyl-2-oxoimidazolidin-4-ylidene)methyl]-2-methoxyphenoxy}-3-(trifluoromethyl)benzonitrile or a salt thereof.12. A prodrug of the compound according to or a salt thereof.13. A medicament containing the compound according to or a salt thereof or a prodrug thereof.14. The medicament according to claim 13 , wherein the compound is present in an estrogen-related receptor-α inverse agonist effective amount.15. The medicament according to claim 13 , wherein the compound is present in an amount effective for treating cancer.16. A method for the prophylaxis or treatment of cancer in a mammal claim 1 , comprising administering an effective amount of the compound according to or a salt thereof or a prodrug thereof to the mammal.17. (canceled) The present invention relates to a novel compound having a superior activity as an estrogen-related receptor-α (ERR-α) modulator and useful as a drug for ...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film. 1. A semiconductor device comprising:a semiconductor film being formed over an insulating surface;a gate insulating film over the semiconductor film; and a first conductive layer over the gate insulating film; and', 'a second conductive layer over the first conductive layer;, 'a gate electrode comprising a channel forming region,', 'LDD regions in contact with the channel forming region,', 'a source region and a drain region in contact with the LDD regions,, 'wherein the semiconductor film includes,'}wherein an end portion of the first conductive layer extends beyond an end portion of the second conductive layer,wherein the LDD regions overlap the first conductive layer with the gate insulating film interposed therebetween,wherein the first conductive layer comprises at least a first element selected from the group consisting of Ta, W, Ti, Mo, Al, and Cu and the second conductive layer comprises at least a second element selected from the group consisting of Ta, W, Ti, Mo, Al, and Cu, andwherein the first element is different from the second element.2. A semiconductor device according to claim 1 , wherein the channel forming region overlaps the second conductive layer with the gate insulating film interposed therebetween.3. A semiconductor device according to further comprising an EL element claim 1 , an anode;', 'a cathode; and', 'an EL layer being formed between the anode and the cathode, and, 'wherein the EL element compriseswherein the drain region is electrically connected to one of the anode and the cathode.4. A semiconductor device according to claim 1 , wherein the first conductive layer has a tapered shape in an end portion thereof in cross section.5. A semiconductor device ...

Light-Emitting Device and a Method of Manufacturing Light-Emitting Device

To provide a highly reliable light-emitting device and especially a light-emitting device which can be formed without use of a metal mask and includes a plurality of light-emitting elements. A structural body at least an end of which has an acute-angled shape is provided so that the end can pass downward through an electrically conductive film formed over the insulating layer and can be at least in contact with an insulating layer having elasticity, thereby physically separating the electrically conductive film, and the electrically conductive films are thus electrically insulated from each other. Such a structure may be provided between adjacent light-emitting elements so that the light-emitting elements can be electrically insulated from each other in the light-emitting device.

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed. 1. A method for manufacturing an active matrix display device , comprising the steps of:forming a semiconductor layer over a glass substrate;forming a first insulating film over the semiconductor layer;forming a conductive layer on and in contact with the first insulating film;forming a resist over the conductive layer, the resist having a first width;etching the conductive layer by using the resist so as to form a wiring;adding an element selected from an n-type impurity element and a p-type impurity element into the semiconductor layer at a first concentration rate with the wiring and the resist thereover as a mask;etching both the wiring and the resist so that the resist has a second width, the second width being smaller than the first width;adding the element into the semiconductor layer at a second concentration rate with the wiring and the resist thereover having the second width as a mask, the second concentration rate being smaller than the first concentration rate;removing the resist;forming a second insulating film over the semiconductor layer and the wiring; andforming a pixel electrode electrically connected with the semiconductor layer.2. The method for manufacturing an active matrix display device according to claim 1 ,wherein the active matrix display device is a liquid crystal display device.3. The method for manufacturing an active matrix display device according to claim 1 ,wherein the semiconductor layer is an island shape.4. The method for manufacturing an active matrix display device according to claim 1 ,wherein the wiring is a gate electrode.5. The method for manufacturing ...

PROPHYLACTIC OR THERAPEUTIC AGENT FOR CANCER

A compound represented by the formula (I): 4. The compound according to claim 1 , wherein R claim 1 , R claim 1 , and Rare each a hydrogen atom claim 1 , and Ris a hydroxyl group substituted by a Calkyl group optionally having substituent(s) claim 1 , or a salt thereof.5. The compound according to claim 1 , wherein X is —O— claim 1 , or a salt thereof.6. The compound according to claim 1 , wherein Ris Caryl optionally having substituent(s) claim 1 , or a salt thereof.7. The compound according to claim 1 , wherein Ris a hydrogen atom claim 1 , or a salt thereof.8. (5Z)-5-({4-[2-Chloro-4-(trifluoromethyl)phenoxy]-3-methoxyphenyl}methylidene)-4-{[2-(diethylamino)ethyl]amino}-1 claim 1 ,3-thiazol-2(5H)-one or a salt thereof.9. 4-(2-Methoxy-4-{(Z)-[4-{[2-(1-methylpyrrolidin-2-yl)ethyl]amino}-2-oxo-1 claim 1 ,3-thiazol-5(2H)-ylidene]methyl}phenoxy)naphthalene-1-carbonitrile or a salt thereof.10. 4-{4-[(Z)-{4-[(2-Hydroxy-2-methylpropyl)amino]-2-oxo-1 claim 1 ,3-thiazol-5(2H)-ylidene}methyl]-2-methoxyphenoxy}-3-(trifluoromethyl)benzonitrile or a salt thereof.11. 4-{4-[(Z)-(1-Ethyl-5-imino-3-methyl-2-oxoimidazolidin-4-ylidene)methyl]-2-methoxyphenoxy}-3-(trifluoromethyl)benzonitrile or a salt thereof.12. A prodrug of the compound according to or a salt thereof.13. A medicament containing the compound according to or a salt thereof or a prodrug thereof.14. The medicament according to claim 13 , wherein the compound is present in an estrogen-related receptor-α inverse agonist effective amount.15. The medicament according to claim 13 , wherein the compound is present in an amount effective for treating cancer.16. A method for the prophylaxis or treatment of cancer in a mammal claim 1 , comprising administering an effective amount of the compound according to or a salt thereof or a prodrug thereof to the mammal.17. (canceled) The present invention relates to a novel compound having a superior activity as an estrogen-related receptor-α (ERR-α) modulator and useful as a drug for ...

Package manufacturing method and semiconductor device

A method for manufacturing a package comprises a first step of forming a metal pattern including a frame and a plurality of leads extending inward from the frame, a second step of molding a resin pattern including a first resin portion which holds the plurality of leads from an inner side thereof, and second resin portions which cover bottom surfaces of peripheral portions, adjacent to portions to be removed, in the plurality of leads while exposing bottom surfaces of the portions to be removed in the plurality of leads, so as to hold the plurality of leads from a lower side thereof, and a third step of cutting the plurality of leads into a plurality of first leads and a plurality of second leads by removing the portions to be removed in the plurality of leads while the resin pattern keeps holding the peripheral portions in the plurality of leads.

INFORMATION TERMINAL, AND METHOD AND PROGRAM FOR RESTRICTING EXECUTABLE PROCESSING

An apparatus and method for restricting executable processing carried out in an information terminal, the method including: accepting an operation by an operator; in response to the accepted operation, executing processing corresponding to the operation; requesting an input of identification information; performing authentication of the identification information input in response to the request; in the case where an input of identification information is requested in the identification information requesting step, acquiring image data storing the acquired image data extracting an area including an image recognized as a person from the acquired image data enabling execution of processing and deletion of the image data when an authentication succeeds and preventing deletion of the image data when the authentication fails. 17-. (canceled)8. An information terminal , comprising:an accepting module operable to accept an operation by an operator;a processing execution module operable to execute processing corresponding to said operation in response to said operation accepted by said accepting module;an identification information requesting module operable to request an input of information of identification information for identification of the operator;an authentication module operable to perform authentication of the identification information input in response to the request by said identification information requesting module;an image data acquiring module operable to acquire the image data when said identification information requesting module requests an input of the identification information;an image data storage module operable to store the image data acquired by said image data acquiring module;an area extracting module operable to extract an area including an image recognized as a person from said acquired image data; andan enabling module operable to enable execution of processing other than deleting said image data by said processing execution module in the ...

PORTABLE TERMINAL AND DISPLAY METHOD

A portable terminal has a first display and a second display, and is transformable between a first form and a second form. The first form is formed by arranging the first display and the second display to form a combined display, and the second form is formed by overlaying the second display upon the first display. In the first form displaying is performed on the combined display and in the second form displaying is performed on only the second display. The portable terminal detects a tilt of the portable terminal at a primary surface of the second display. When the portable terminal is in the first form, the tilt that is detected is corrected and displaying is performed based on the corrected tilt. When the portable terminal is in the second form, displaying is performed based on the detected tilt. 1. A portable terminal including a casing that includes a first display and a casing that includes a second display , comprising:a first detecting module configured to detect a form of the portable terminal, the form being a first form formed by the first display and the second display arranged so that a short side of the first display and a short side of the second display combine to form a long side of a combined display, or a second form formed by overlaying the casing that includes the second display upon the casing that includes the first display, in the first form displaying being performed on the combined display and in the second form displaying being performed on only the second display;a second detecting module configured to detect a tilt of one side of the second display;a correction module configured to, when the first form is detected by the first detecting module, correct a result of the detection by the second detecting module; and when the first form is detected, display an image on the combined display using a first display form that is in accordance with a tilt indicated by a result of the correction by the correction module, in the first display form ...

ELECTROLUMINESCENCE DISPLAY DEVICE

Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured to emit light through the counter substrate, and a space between the substrate and the counter substrate is filled with a filler. The electroluminescence device is featured by the tapered side surface of a gate electrode of the thin film transistor. 1. (canceled)2. A semiconductor device comprising:a first substrate;a second substrate over the first substrate, the second substrate being smaller than the first substrate so that the first substrate has a first region which overlaps with the second substrate and a second region which does not overlap with the second substrate;a pixel portion in the first region, the pixel portion comprising a plurality of pixels between the first substrate and the second substrate;a wiring over the first substrate, the wiring extending from the first region to the second region;a flexible printed circuit connected to the wiring in the second region, the flexible printed circuit being configured to transmit an electrical signal to the pixel portion; anda sealant covering the flexible printed circuit, a part of the second region which does not overlap with the flexible printed circuit, and a side surface of the second substrate, a transistor; and', 'a light-emitting element over and electrically connected to the transistor, the light-emitting element comprising a white-emissive light-emitting layer which is configured to be coupled with a color filter so that the light-emitting element undergoes color display, and, 'wherein the plurality of pixels each comprisewhere a space surrounded by the first substrate, the second substrate, and the sealant is filled with a filler to which ...

PYRIDAZINE COMPOUND

The present provides a pyridazine compound having an inhibiting effect on Stearoyl-CoA desaturase (SCD) (in particular, SCD1). The present provides a compound represented by formula 2. The compound or a salt thereof according to claim 1 , wherein Ris an optionally halogenated Calkyl group.4. The compound or a salt thereof according to claim 1 , wherein both of Rand Rare a hydrogen atom.6. The compound or a salt thereof according to claim 1 , wherein L is a bond.7. The compound or a salt thereof according to claim 1 , wherein both of m and n are 2.9. (5-(6-(4-(Trifluoromethyl)-4-(4-(trifluoromethyl)phenyl)piperidin-1-yl)pyridazin-3-yl)-1 claim 1 ,3 claim 1 ,4-oxadiazol-2-yl)methanol claim 1 , or a salt thereof.10. (5-(6-(4-(Trifluoromethyl)-4-(4-(trifluoromethyl)phenyl)piperidin-1-yl)pyridazin-3-yl)-1 claim 1 ,2 claim 1 ,4-thiadiazol-3-yl)methanol claim 1 , or a salt thereof.11. (5-(6-(4-(Trifluoromethyl)-4-(4-(trifluoromethyl)phenyl)piperidin-1-yl)pyridazin-3-yl)-1 claim 1 ,3 claim 1 ,4-thiadiazol-2-yl)methanol claim 1 , or a salt thereof.12. A medicament comprising a compound or a salt thereof according to .13. (canceled)14. (canceled)15. A method for inhibiting SCD1 in a mammal claim 1 , comprising administering an effective amount of a compound or a salt thereof according to to a mammal.16. A method for preventing or treating cancer in a mammal claim 1 , comprising administering an effective amount of a compound or a salt thereof according to to a mammal.17. (canceled)18. (canceled) The present invention relates to a novel compound or a salt thereof which has an inhibitory effect on stearoyl-CoA desaturase (hereinafter, also referred to as SCD), particularly, SCD1, a subtype of SCD. The present invention further relates to a medicament for the prevention or treatment of SCD1-related diseases including cancer and the like, comprising the compound or a salt thereof.SCD, which is an enzyme localized in the endoplasmic reticulum, is a rate-limiting enzyme of ...

FUSED HETEROCYCLIC COMPOUND

The present invention provides a fused heterocyclic compound that has CDK 8 and/or CDK 19 inhibitory activity. The present invention provides a compound represented by formula (I) 2. A compound according to or a salt thereof claim 1 , wherein Ris a carbamoyl group.3. A compound according to or a salt thereof claim 1 , wherein Ris (1) a halogen atom,', '(2) a cyano group,', {'sub': '1-6', '(3) a Calkyl group,'}, {'sub': '1-6', 'claim-text': (a) a hydroxy group, and', {'sub': '1-6', '(b) a Calkoxy group,'}], '(4) a carbamoyl group optionally mono- or di-substituted by a Calkyl group optionally substituted by 1 to 3 substituents selected from'}, {'sub': '3-10', '(5) a Ccycloalkyl-carbamoyl group,'}, '(6) a carboxy group,', {'sub': '1-6', '(7) a Calkoxy-carbonyl group,'}, (a) a hydroxy group, and', {'sub': '1-6', '(b) a Calkoxy group,'}], '(8) a 3- to 14-membered non-aromatic heterocyclyl-carbonyl group optionally substituted by 1 to 5 substituents selected from'}, '(9) a carbamimidoyl group, and', [{'sub': '1-6', '(i) a Calkyl group,'}, {'sub': '1-6', 'claim-text': (a) a hydroxy group, and', {'sub': '1-6', '(b) a Calkoxy group,'}], '(ii) a Calkyl-carbonyl group optionally substituted by 1 to 3 substituents selected from'}, {'sub': '3-10', '(iii) a Ccycloalkyl-carbonyl group optionally substituted by 1 to 3 hydroxy groups,'}, {'sub': '1-6', '(iv) a Calkoxy-carbonyl group, and'}, {'sub': '1-6', '(v) an oxetanyl-carbonyl group optionally substituted by 1 to 3 Calkyl groups;'}], '(10) an amino group optionally mono- or di-substituted by a substituent selected from'}], '(I) a 5- or 6-membered nitrogen-containing aromatic heterocyclic group optionally substituted by 1 to 3 substituents selected from'}{'sub': '6-14', 'claim-text': (1) a halogen atom,', '(2) a cyano group,', {'sub': '1-6', '(3) a Calkyl group optionally substituted by 1 to 3 halogen atoms,'}, '(4) 1 to 3 3- to 14-membered non-aromatic heterocyclyl-carbonyl groups,', {'sub': 1-6', '1-6, '(5) a carbamoyl group ...

ANALYSIS INFORMATION MANAGEMENT SYSTEM

An analysis data collector stores data acquired with an analytical instrument in a file to which a data ID has been given, and registers the file in a database. A log information collector registers, in the database, log information which shows various operations on each analytical instrument or client terminal, state of the device or the like. After data files are selected, a command to create an audit trail is issued, whereupon an audit trail information extractor collects information corresponding to those data files. The audit trail information extractor extracts each piece of log information containing the data ID and pieces of log information which contain the device ID and user ID and were obtained within a time range from login to logout including the date and time of registration. An audit trail creator creates an audit trail by organizing the log information in time-series order, and registers it. 1. An analysis information management system including a communication network , an analytical instrument connected to the communication network via a computer , a database server connected to the communication network , and a client terminal connected to the communication network , the analysis information management system configured to register , in a database constructed on the database server , a data file containing data acquired by performing an analysis on a sample with the analytical instrument and/or data acquired by performing a data-analyzing process using the client terminal , and to register various items of log information in the database , the items of log information including various operations on the computer and the client terminal as well as information showing a device state of the analytical instrument , wherein:the client terminal includes:a) a file selector for allowing a user to select one or more data files for which an audit trail is to be created among data files registered in the database;b) an audit trail information extractor for ...

ANALYSIS INFORMATION MANAGEMENT SYSTEM

In the case where a plurality of analysis data files which respectively contain analysis results and data-analyzing process results for a plurality of samples should be managed as one lot, a portion of the information contained in those analysis data files is extracted and compiled into a final result record report file. This file is registered in a database. A supervisor views the final result record report on a client terminal, evaluates the validity of the analysis result and other contents for each sample, and performs a predetermined operation to execute the signature of approval or other evaluations. Signature information, including the signer's name, date and time of the signature, etc., is recorded for the final result record report file. The same signature information is also recorded for each of the analysis data files located by referring to link information. 1. An analysis information management system including a communication network , an analytical instrument connected to the communication network , a database server connected to the communication network , as well as a client terminal connected to the communication network and provided with an operation unit and a display unit , the analysis information management system configured to register , in a database constructed on the database server , a data file containing analysis data acquired by performing an analysis on a sample with the analytical instrument and/or data-analyzing process result acquired by performing a data-analyzing process based on the analysis data using the client terminal , and to manage the registered data file , wherein:the client terminal includes:a) an integrated file creator for extracting at least a portion of a plurality of pieces of information respectively contained in a plurality of data files registered in the database or a plurality of pieces of information respectively associated with the data files, for compiling the extracted pieces of information into one ...

DATA PROCESSING SYSTEM FOR ANALYTICL INSTRUMENT, AND DATA PROCESSING PROGRAM FOR ANALYTICAL INSTRUMENT

When a user creates a template to be used for the creation of an analysis report, a check result record area can be set at an appropriate location in a basic template. The content of the information and other elements to be placed in the check result record area can also be set. With this function, the check result record area can be set for each report item to be checked, with the following elements arranged in the area: a dropdown list for selecting the check result which indicates acceptance/rejection of the content; a character string in which the date and time of checking and the checker's name are automatically inserted; and a text box for describing the reason for rejection (if rejected). In the checking process, the checker inputs those items of information, whereby the result of the check of the content is electronically recorded for each report item. 1. A data processing system for an analytical instrument including an operation unit to be operated by a user and a display unit as well as having a function of creating an analysis report in which various items of information including data collected with an analytical instrument and a process result based on the data are described , and a function of providing the analysis report in a form of an electronic file , the data processing system for an analytical instrument comprising:a) a basic template storage section in which a template that specifies a form of an analysis report is stored, the template including an arrangement of a plurality of report items related to an analysis;b) a check result record area setting processor for displaying, on a screen of the display unit, an image of the template retrieved from the basic template storage section according to a predetermined operation with the operation unit by a user, and for allowing the user to set, at a position on the image of the template for each of the report items, a check result record area for recording a result of checking of a report content, ...

ROTATING BODY, POWER TRANSMISSION DEVICE USING SAME, AND ROTATING BODY PRODUCTION METHOD

A drive shaft () as a rotating body includes an engaging portion () engaging with a side gear () and a sliding portion () abutted by a differential case (). The engaging portion () includes a plurality of engaging grooves (). The engaging grooves () engage with the side gear (). The engaging portion () includes a small diameter portion () at a position corresponding to between the drive shaft () and the differential case () in a direction of a rotational axis L The small diameter portion () has an outer diameter smaller than the outer diameter of the sliding portion (). 1. A rotating body disposed on a power transmission path between a prime mover and a wheel , the rotating body comprising:an engaging portion located on one side of the rotating body in a rotation axial direction thereof and having an engaging groove engraved on an outer periphery thereof; and a sliding portion located on the other side of the rotating body in the rotation axial direction and slidably abutted by an abutment member which can rotate relative to the rotating body, whereinthe rotating body is arranged such that the sliding portion is located closer to a wheel side on the power transmission path than the engaging portion,the engaging groove comprises a plurality of engaging grooves extending in the rotation axial direction and formed circumferentially at intervals,the engaging portion includes a small diameter portion located closer to the one side in the rotation axial direction than the other side which is an end portion on the other side of the engaging groove, andthe small diameter portion has an outer diameter smaller than an outer diameter of the sliding portion.2. The rotating body according to claim 1 , whereinthe small diameter portion is formed such that a deepest portion thereof is located radially outwardly of a bottom position of the engaging grooves.3. A power transmission device using the rotating body according to claim 1 , the power transmission device comprising another ...

LIGHT SOURCE UNIT

A light source unit includes a light distribution lens configured to guide light emitted from an LED disposed behind the light distribution lens, and a reflector arranged to surround the light distribution lens. Illuminance unevenness can be more suitably reduced, and effective light is not blocked even if a pinhole device is used for glare prevention, thereby avoiding illuminance unevenness and illuminance reductions. The light distribution lens has a columnar part that extends in the optical axis direction, and a conical recess is formed in the distal end of the columnar part. The conical recess is constituted by a reflective surface that fully reflects, in the circumferential direction, light incident on the light distribution lens. The reflector reflects light emitted from a cylindrical side surface of the columnar part such that the reflected light becomes converging light.

Metal Wiring and Method of Manufacturing the Same, and Metal Wiring Substrate and Method of Manufacturing the Same

A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle α in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate. 1wherein edges of the conductive film are tapered so as to have a taper angle α of 5 to 85°.. A metal wiring comprising a conductive layer comprising at least one selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, This application is a continuation of copending U.S. application Ser. No. 15/916,860 filed on Mar. 9, 2018 which is a continuation of U.S. application Ser. No. 14/873,863 filed on Oct. 2, 2015 (now U.S. Pat. No. 9,917,107 issued Mar. 13, 2018) which is a continuation of U.S. application Ser. No. 14/444,276 filed on Jul. 28, 2014 (now U.S. Pat. No. 9,153,352 issued Oct. 6, 2015) which is a continuation of U.S. application Ser. No. 13/465,398 filed on May 7, 2012 (U.S. Pat. No. 8,791,513 issued Jul. 29, 2014) which is a divisional of U.S. application Ser. No. 12/357,533 filed on Jan. 22, 2009 (now U.S. Pat. No. 8,173,478 issued May 8, 2012) which is a divisional of U.S. application Ser. No. 11/105,917 filed on Apr. 14, 2005 (now U.S. Pat. No. 7,482,274 issued Jan. 27, 2009) which is a divisional of U.S. application Ser. No. 10/205,976 filed on Jul. 26, 2002 (now abandoned), which are incorporated herein by reference.The present ...

Analysis information management system

In response to a predetermined user operation on a client terminal, a display unit displays a data manager window. Analysis files, which satisfy narrowing conditions among analysis data files registered in a database, are displayed in the window's data file list. The user selects a plurality of files for which a final result record should be created, and selects and indicates a “Create report set” in an operation menu. Then, the selected analysis data files, an analysis report file, and audit trail report file associated with those analysis data files are read from the database and sent to the client terminal. On the client terminal, a data list which shows file names and other information on the analysis data files is created. A final result record report is created, including the data list, descriptions in the audit trail report, descriptions in the analysis report and other relevant information.

HETEROARYL COMPOUNDS USEFUL AS INHIBITORS OF SUMO ACTIVATING ENZYME

Disclosed are chemical entities which are compounds of formula (I): 144.-. (canceled)46. The compound or pharmaceutically acceptable salt of claim 45 , wherein R is tert-butoxycarbonyl (Boc).47. The compound or pharmaceutically acceptable salt of claim 45 , wherein R is diphenylphosphine oxide (DPP).52. The method of claim 51 , wherein converting Compound 2 to [(1R claim 51 ,2S claim 51 ,4R)-4-{[5-({4-[(1R)-7-chloro-1 claim 51 ,2 claim 51 ,3 claim 51 ,4-tetrahydroisoquinolin-1-yl]-5-methyl-2-thienyl}carbonyl)pyrimidin-4-yl]amino}-2-hydroxycyclopentyl]methyl sulfamate of formula I-263a claim 51 , or a pharmaceutically acceptable salt thereof comprises:removing R and the triisopropylsilyloxy (TIPS) groups to obtain [(1R,2S,4R)-4-{[5-({4-[(1R)-7-chloro-1,2,3,4-tetrahydroisoquinolin-1-yl]-5-methyl-2-thienyl}carbonyl)pyrimidin-4-yl]amino}-2-hydroxycyclopentyl]methyl sulfamate of formula I-263a, or a pharmaceutically acceptable salt thereof.53. The method of claim 51 , wherein Compound 1 is reacted with Int-259 in the presence of a base.54. The method of claim 52 , wherein R is removed in the presence of an acid.55. The method of claim 52 , wherein the triisopropylsilyloxy (TIPS) group is removed in the presence of an acid.56. The method of claim 52 , wherein R and the triisopropylsilyloxy (TIPS) group are removed in separate steps.57. The method of claim 52 , wherein R and the triisopropylsilyloxy (TIPS) group are removed concurrently in one step.58. The method of claim 50 , wherein [(1R claim 50 ,2S claim 50 ,4R)-4-{[5-({4-[(1R)-7-chloro-1 claim 50 ,2 claim 50 ,3 claim 50 ,4-tetrahydroisoquinolin-1-yl]-5-methyl-2-thienyl}carbonyl)pyrimidin-4-yl]amino}-2-hydroxycyclopentyl]methyl sulfamate of formula I-263a claim 50 , or a pharmaceutically acceptable salt thereof claim 50 , is isolated by a process selected from the group consisting of crystallization claim 50 , filtration claim 50 , trituration claim 50 , evaporation claim 50 , chromatography claim 50 , and combinations ...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed. 1. (canceled)2. A method for manufacturing an active matrix display device , comprising: forming a semiconductor layer over a glass substrate;forming a first insulating film over the semiconductor layer;forming a conductive layer on and in contact with the first insulating film;forming a mask over the conductive layer, the mask having a first width;etching the conductive layer by using the mask so as to form a wiring;adding an element selected from an n-type impurity element and a p-type impurity element into a first portion of the semiconductor layer at a first concentration rate, wherein the first portion is not covered with the wiring;etching both the wiring and the mask so that the mask has a second width, the second width being smaller than the first width; andadding the element into the first portion and a second portion of the semiconductor layer at a second concentration rate smaller than the first concentration rate.3. The method for manufacturing an active matrix display device according to claim 2 , wherein the active matrix display device is a liquid crystal display device.4. The method for manufacturing an active matrix display device according to claim 2 , wherein the semiconductor layer is an island shape.5. The method for manufacturing an active matrix display device according to claim 2 , wherein the wiring includes a portion that works as a gate electrode.6. The method for manufacturing an active matrix display device according to claim 2 , further comprising:activating the element added into the semiconductor layer after adding the element.7. The method for manufacturing an ...

CATHETER FOR INSERTION INTO BRANCHED BLOOD VESSEL

A branch blood vessel insertion catheter has a catheter body having a lumen penetrating therethrough from a distal end of the catheter body to a proximal end thereof to allow a guide wire to be inserted therethrough. The catheter body has an inner layer, a wire-wound reinforcing member provided on an outer surface of the inner layer, and an outer layer covering both the inner layer and the reinforcing member. The catheter body has a first physical property change point located at a position apart from a distal end of the catheter at a distance of 3.0 to 7.0 mm and a rigidity of a portion of the catheter body located proximally from the first physical property change point is set higher than that of a portion of the catheter body located distally from the first physical property change point. 1. A branch blood vessel insertion catheter to be inserted into a branch blood vessel branching from a first blood vessel;wherein said catheter has a catheter body having a lumen penetrating therethrough from a distal end of said catheter body to a proximal end thereof to allow a guide wire to be inserted therethrough;said catheter body has an inner layer, a wire-wound reinforcing member provided on an outer surface of said inner layer, and an outer layer covering both said inner layer and said reinforcing member; andsaid catheter body has a first physical property change point located at a position apart from a distal end of said catheter at a distance of 3.0 to 7.0 mm; anda rigidity of a portion of said catheter body located proximally from said first physical property change point is set higher than that of a portion of said catheter body located distally from said first physical property change point.2. A branch blood vessel insertion catheter according to claim 1 , wherein a three-point bending load of a portion of a proximal side part disposed in a vicinity of said first physical property change point is set larger than that of a portion of a distal side part disposed in ...

Metal Wiring and Method of Manufacturing the Same, and Metal Wiring Substrate and Method of Manufacturing the Same

A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle α in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate. 1. (canceled)2. A display device comprising a pixel portion comprising:a semiconductor layer over a substrate, the semiconductor layer having a channel forming region, a source region, and a drain region of a transistor;a first conductive layer over the substrate, the first conductive layer having a tapered edge;a second conductive layer over the substrate, the second conductive layer having a tapered edge;a first insulating layer between the semiconductor layer and the first conductive layer;a second insulating layer over the first conductive layer and the second conductive layer;a third conductive layer on the second insulating layer, the third conductive layer electrically connected to the second conductive layer and one of the source region and the drain region;a fourth conductive layer on the second insulating layer, the fourth conductive layer electrically connected to the other of the source region and the drain region; anda fifth conductive layer on the second insulating layer, the fifth conductive layer electrically connected to the first conductive layer.3. The display device according to claim 2 , wherein the first conductive layer comprises a material containing at least one element selected from the group consisting of Ta claim 2 , W claim 2 , Ti claim 2 , Mo claim 2 , ...

FUSED HETEROCYCLIC COMPOUND

Provided is a compound represented by the following formula, or a salt thereof: 2. The compound or salt thereof according to claim 1 , wherein{'sup': '2', 'Ris'}{'sub': 1-6', '1-6, '(I) a Calkyl group optionally having 1 to 3 five- or six-membered monocyclic aromatic heterocyclic groups optionally having 1 to 3 optionally halogenated Calkyl groups; or'}{'sub': '7-16', '(II) an optionally halogenated Caralkyl group.'}4. The compound or salt thereof according to claim 1 , wherein{'sup': '3', 'Ris a hydrogen atom;'}{'sup': '4', 'sub': '1-6', 'claim-text': {'sub': '1-6', '(b) a Calkoxy group; and'}, 'Ris (a) an amino group optionally monosubstituted or disubstituted with a Calkyl group, or'}{'sup': '5', 'sub': '1-6', 'claim-text': {'sub': '1-6', '(b) a Calkyl group optionally having 1 to 3 hydroxy groups.'}, 'Ris (a) a Calkoxy group, or'}5. The compound or salt thereof according to claim 1 , wherein{'sup': '1', 'Ris'}{'sub': '1-6', '(I) a Calkyl group optionally having 1 to 5 substituents each selected from'}(a) a halogen atom,(b) a hydroxy group,(c) a cyano group,{'sub': '1-6', 'claim-text': (i) a halogen atom, and', '(ii) a hydroxy group, and, '(d) a Calkoxy group optionally having 1 to 3 substituents each selected from'}(e) a three- to eight-membered nonaromatic heterocyclic group optionally having 1 to 3 halogen atoms;(II) a three- to eight-membered nonaromatic heterocyclic group optionally having 1 to 5 substituents each selected from{'sub': '1-6', '(a) a Calkoxy group,'}(b) a halogen atom, and(c) a hydroxy group;{'sub': '1-6', '(III) a five- to fourteen-membered aromatic heterocyclic group optionally having 1 to 3 optionally halogenated Calkyl groups;'}{'sub': '1-6', '(IV) a Calkoxy group optionally having 1 to 5 substituents each selected from'}(a) a hydroxy group,(b) a three- to eight-membered nonaromatic heterocyclic group, and{'sub': '1-6', '(c) a five- or six-membered monocyclic aromatic heterocyclic group optionally having 1 to 3 optionally halogenated ...

ELECTROLUMINESCENCE DISPLAY DEVICE

Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured to emit light through the counter substrate, and a space between the substrate and the counter substrate is filled with a filler. The electroluminescence device is featured by the tapered side surface of a gate electrode of the thin film transistor. 1. (canceled)2. A semiconductor device comprising:a first substrate;a second substrate over the first substrate, the second substrate being smaller than the first substrate so that the first substrate has a first region which overlaps with the second substrate and a second region which does not overlap with the second substrate;a pixel portion in the first region, the pixel portion comprising a plurality of pixels between the first substrate and the second substrate;a wiring over the first substrate, the wiring extending from the first region to the second region;a flexible printed circuit connected to the wiring in the second region through an anisotropic conductive material;a filler between the pixel portion and the second substrate, the filler including a drying agent; anda sealant covering the flexible printed circuit, a part of the second region which does not overlap with the flexible printed circuit, and a side surface of the second substrate, a transistor;', 'a transparent anode electrically connected to the transistor;', 'a white-emissive EL layer over the transparent anode, the white-emissive EL layer having a lamination structure of a plurality of layers and being configured to be coupled with a color filter to undergo color display; and', 'a cathode over the white-emissive EL layer, the cathode comprising aluminum so that light emitted in the white- ...

ELECTROLUMINESCENCE DISPLAY DEVICE

Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured to emit light through the counter substrate, and a space between the substrate and the counter substrate is filled with a filler. The electroluminescence device is featured by the tapered side surface of a gate electrode of the thin film transistor. 1. (canceled)2. A display device comprising:a glass substrate;a base film over and in contact with the glass substrate; anda plurality of pixels over the base film,wherein: a crystalline silicon layer over and in contact with the base film;', 'a gate insulating film over and in contact with the crystalline silicon layer;', 'a gate electrode over and in contact with the gate insulating film;', 'a first insulating film over and in contact with the gate electrode and the gate insulating film;', 'a source electrode and a drain electrode over the first insulating film, the source electrode and the drain electrode being in contact with the crystalline silicon layer in a contact hole formed in the first insulating film and the gate insulating film; and', 'a pixel electrode over and in contact with one of the source electrode and the drain electrode;, 'at least one of the plurality of pixels comprisesthe crystalline silicon layer is overlapped with a pixel electrode in a neighboring pixel which is adjacent to the one of the plurality of pixels with a gate line interposed therebetween; andthe gate electrode is a part of the gate line.3. The display device according to claim 2 ,wherein the crystalline silicon layer is folded so as to extend between the one of the plurality of pixels and the neighboring pixel.4. The display device according to claim 2 ,wherein the base ...

PROPHYLACTIC OR THERAPEUTIC AGENT FOR SPINAL MUSCULAR ATROPHY

A prophylactic or therapeutic agent for spinal muscular atrophy according to the present invention includes a compound represented by the formula (I) or a salt thereof: 2. The compound or a salt thereof according to claim 1 , wherein{'sup': '2', 'Ris an 8- to 10-membered nitrogen-containing aromatic heterocyclic group containing two or more heteroatoms, the 8- to 10-membered nitrogen-containing aromatic heterocyclic group being optionally substituted with a non-aromatic substituent; and'}{'sup': '3', 'Ris a 3- to 14-membered non-aromatic heterocyclic group containing one or more nitrogen atoms, the 3- to 14-membered non-aromatic heterocyclic group being optionally substituted with a non-aromatic substituent.'}3. The compound or a salt thereof according to or claim 1 , wherein{'sup': 2', '4, 'Ris an aromatic heterocycle selected from the group consisting of indazolyl, benzimidazolyl, pyrrolo[1,2-a]pyrazinyl, pyrrolo[1,2-b]pyridazinyl, pyrrolo[1,2-c]pyrimidinyl, pyrrolo[1,2-b]pyrimidinyl, imidazo[1,2-a]pyridinyl, pyrazolo[1,5-a]pyridinyl, imidazo[1,5-a]pyridinyl, pyrrolo[3,2-b]pyridinyl, pyrrolo[3,2-c]pyridinyl, pyrrolo[2,3-c]pyridinyl, pyrrolo[2,3-b]pyridinyl, 1,3-benzoxazolyl, 1,2-benzisoxazolyl, 2,1-benzisoxazolyl, furo[3,2-b]pyridinyl, furo[3,2-c]pyridinyl, furo[2,3-c]pyridinyl, furo[2,3-b]pyridinyl, pyrazolo[3,4-b]pyridinyl, 1H-pyrazolo[3,4-b]pyridinyl, pyrazolo[3,4-c]pyridinyl, 1H-pyrazolo[3,4-c]pyridinyl, pyrazolo[4,3-c]pyridinyl, pyrazolo[4,3-b]pyridinyl, pyrazolo[1,5-a]pyrazinyl, pyrazolo[1,5-a]pyrimidinyl, pyrazolo[1,5-c]pyrimidinyl, pyrazolo[1,5-b]pyridazinyl, imidazo[4,5-b]pyridinyl, imidazo[4,5-c]pyridinyl, imidazo[1,2-a]pyrimidinyl, imidazo[1,2-a]pyrazinyl, imidazo[1,2-c]pyrimidinyl, imidazo[1,2-b]pyridazinyl, imidazo[1,5-a]pyrimidinyl, imidazo[1,5-a]pyrazinyl, imidazo[1,5-c]pyrimidinyl, imidazo[1,5-b]pyridazinyl, pyrrolo[3,2-c]pyridazinyl, pyrrolo[3,2-d]pyrimidinyl, pyrrolo[2,3-b]pyrazinyl, pyrrolo[2,3-d]pyridazinyl, pyrrolo[2,3-d]pyrimidinyl, pyrrolo[2 ...

FUSED HETEROCYCLIC COMPOUND

Provided is a compound represented by the following formula, or a salt thereof: 112-. (canceled)1516-. (canceled)17. The method according to claim 13 , wherein the compound represented by the formula (I) claim 13 , or hydrate or salt thereof is 6-(4-methoxypyrrolo[2 claim 13 ,1-f][1 claim 13 ,2 claim 13 ,4]triazin-5-yl)-2-methyl-1-((3-methyl-1 claim 13 ,2 claim 13 ,4-thiadiazol-5-yl)methyl)-1H-imidazo[4 claim 13 ,5-b]pyridine.18. The method according to claim 13 , wherein the compound represented by the formula (I) claim 13 , or hydrate or salt thereof is 1-((5-(difluoromethyl)-1 claim 13 ,3 claim 13 ,4-oxadiazol-2-yl)methyl)-6-(4-methoxypyrrolo[2 claim 13 ,1-f][1 claim 13 ,2 claim 13 ,4]triazin-5-yl)-2-methyl-1H-imidazo[4 claim 13 ,5-b]pyridine.19. The method according to claim 13 , wherein the compound represented by the formula (I) claim 13 , or hydrate or salt thereof is 1-((5-(1 claim 13 ,1-difluoroethyl)-1 claim 13 ,3 claim 13 ,4-oxadiazol-2-yl)methyl)-6-(4-methoxypyrrolo[2 claim 13 ,1-f][1 claim 13 ,2 claim 13 ,4]triazin-5-yl)-2-methyl-1H-imidazo[4 claim 13 ,5-b]pyridine.20. The method according to claim 13 , wherein the compound represented by the formula (I) claim 13 , or hydrate or salt thereof is 1-((5-((1R)-1-fluoroethyl)-1 claim 13 ,3 claim 13 ,4-oxadiazol-2-yl)methyl)-6-(4-methoxypyrrolo[2 claim 13 ,1-f][1 claim 13 ,2 claim 13 ,4]triazin-5-yl)-2-methyl-1H-imidazo[4 claim 13 ,5-b]pyridine.21. The method according to claim 14 , wherein the compound represented by the formula (I) claim 14 , or hydrate or salt thereof is 6-(4-methoxypyrrolo[2 claim 14 ,1-f][1 claim 14 ,2 claim 14 ,4]triazin-5-yl)-2-methyl-1-((3-methyl-1 claim 14 ,2 claim 14 ,4-thiadiazol-5-yl)methyl)-1H-imidazo[4 claim 14 ,5-b]pyridine.22. The method according to claim 14 , wherein the compound represented by the formula (I) claim 14 , or hydrate or salt thereof is 1-((5-(difluoromethyl)-1 claim 14 ,3 claim 14 ,4-oxadiazol-2-yl)methyl)-6-(4-methoxypyrrolo[2 claim 14 ,1-f][1 claim 14 ,2 ...

Semiconductor Device and Manufacturing Method Thereof

There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered structure of a material film containing mainly W, a material film containing mainly Al, and a material film containing mainly Ti to reduce a wiring resistance. A wiring is etched using an IPC etching apparatus. The gate electrode has a taper shape and the width of a region which becomes the taper shape is set to be 1 μm or more.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film. 1. (canceled)2. A semiconductor device comprising a driver portion and a pixel portion ,wherein the driver portion comprises a shielding film and a transistor including a semiconductor layer, andwherein a channel forming region of the semiconductor layer and the shielding film overlap with each other.3. The semiconductor device according to claim 2 , wherein the semiconductor layer comprises silicon.4. The semiconductor device according to claim 2 , wherein the pixel portion comprises an EL element.5. The semiconductor device according to claim 2 , wherein the driver portion and the pixel portion are formed over a substrate.6. The semiconductor device according to claim 2 ,wherein the transistor further includes:a gate insulating film over the semiconductor layer; and a first conductive layer over the gate insulating film; and', 'a second conductive layer over the first conductive layer,, 'a gate electrode comprising the channel forming region;', 'LDD regions in contact with the channel forming region; and', 'a source region and a drain region in contact with the LDD regions,, 'wherein the semiconductor layer includeswherein an end portion of the first conductive layer extends beyond an end portion of the second conductive layer,wherein the LDD regions overlap the first conductive layer with the gate insulating film interposed therebetween,wherein the second conductive layer has a tapered shape in an end portion of the second conductive layer in cross section.7. A semiconductor device according to claim 2 , wherein the semiconductor device is one selected from the group consisting of an EL display device claim 2 , a video camera claim 2 , a digital camera claim 2 , a head mount ...

HETEROARYL COMPOUNDS USEFUL AS INHIBITORS OF SUMO ACTIVATING ENZYME

Disclosed are chemical entities which are compounds of formula (I): 2. The chemical entity of claim 1 , wherein:{'sub': '2', 'claim-text': (i) a 5-membered heteroaryl or a 6-membered aryl or heteroaryl to form a bicyclic group; or', {'sub': 1-4', '1-4', '1-4', '1-4', '1-4', '1-4', '2', '2', '2', '2', '2', '2', '2', '2', '2, 'sup': z7', 'z8', 'z8', 'z8', 'z7', 'z7', 'z7', 'z7', 'z7', 'z8', 'z7', 'z8', 'z7', 'z8', 'z9, '(ii) a 9-membered heteroaryl or a 10-membered aryl or heteroaryl to form a tricyclic group; wherein the ring system is optionally substituted by 1-3 independent occurrences of halogen, hydroxyl, cyano, Caliphatic, Cfluoroaliphatic, Calkoxy, Cfluoroalkoxy, —S—Caliphatic, —S—Cfluoroaliphatic, —N(R), —C(O)R, —S(O)R, —S(O)R, —C(O)R, —C(O)N(R), —S(O)N(R), —OC(O)N(R), —N(R)C(O)R, —N(R)SOR, —N(R)C(O)OR, T-R, a 5- to 6-membered heteroaryl, a 6-membered aryl, a 3- to 6-membered cycloaliphatic, or a 4- to 6-membered heterocyclyl; and the ring system is optionally substituted at one saturated carbon with oxo, a spirocyclic 3- to 6-membered carbocycle, or a spirocyclic 4- to 6-membered heterocycle;'}], '(a) Zis a ring system having a 5- to 7-membered heterocyclyl with 1-2 heteroatoms or a 5- to 7-membered cycloaliphatic fused to'}{'sup': 'z7', 'sub': '1-4', 'each occurrence of Ris independently hydrogen or Calkyl;'}{'sup': 'z8', 'sub': '1-4', 'each occurrence of Ris independently Calkyl;'}{'sub': 2', '1-2, 'Tis a Calkylene chain;'}{'sup': z9', 'z7', 'z7', 'z8', 'z7', 'z7, 'sub': 2', '2', '2, 'claim-text': OR', {'sub': '2', 'sup': 'e', 'claim-text': {'sup': 'e', 'sub': 3', '1-4', '1-4, '(i) Ris hydrogen, hydroxyl, halogen, —CF, or Caliphatic optionally substituted with one or more hydroxyl, halogen, or Caliphatic,'}, '(b) Zis L-Rwherein either, {'sup': e', 'f', 'f′, 'claim-text': {'sup': e', 'e', 'z7', 'z8', 'z8', 'z8', 'z7', 'z7', 'z7', 'z7', 'z7', 'z8', 'z7', 'z8', 'z7', 'z8', 'z9, 'sub': 1-4', '1-4', '1-4', '1-4', '1-4', '1-4', '2', '2', '2', '2', '2', '2', '2', ...

COMMUNICATION SYSTEM, BASE STATION AND COMMUNICATION TERMINAL

A base station device is configured to set, for each communication terminal device, a radio format for signals transmitted to and received from the communication terminal device. The radio format is set for each communication terminal device in accordance with, for example, a type of use including a moving speed of the communication terminal device. The base station device may be configured to change the radio format for the communication terminal device based on the information about a change in the environment of a radio communication between the communication terminal device and the base station device and a change including the communication terminal device's location. The signals transmitted and received between the base station device and the communication terminal device include radio formats in which at least one of a length of a symbol of the signal and a length of a cyclic prefix in an OFDM scheme differs. 1. (canceled)2. A communication system comprising:a plurality of communication terminals; andat least one base station that configures a plurality of cells for performing radio communication with the plurality of communication terminals, a first cell in accordance with a first radio format; and', 'a second cell neighboring the first cell in accordance with a second radio format that is different from the first radio format in at least one of an orthogonal frequency domain multiplexing (OFDM) symbol length and a cyclic prefix (CP) length, and', 'a first interval between timings at which specific reference signal insertion in the first radio format is started and a second interval between timings at which specific reference signal insertion in the second radio format is started are the same., 'wherein the at least one base station configures3. The communication system according to claim 2 , wherein the first interval in the first radio format is caused to match the second interval in the second radio format in which at least one of the OFDM symbol length ...

COMMUNICATION SYSTEM

A base station device is configured to set, for each communication terminal device, a radio format for signals transmitted to and received from the communication terminal device. The radio format is set for each communication terminal device in accordance with, for example, a type of use including a moving speed of the communication terminal device. The base station device may be configured to change the radio format for the communication terminal device based on the information about a change in the environment of a radio communication between the communication terminal device and the base station device and a change including the communication terminal device's location. The signals transmitted and received between the base station device and the communication terminal device include radio formats in which at least one of a length of a symbol of the signal and a length of a cyclic prefix in an OFDM scheme differs. 1. A communication system comprising:a plurality of communication terminal devices; anda base station device configuring a cell in which said base station device is capable of radio communication with said communication terminal devices,wherein said base station device is configured to set, for each of said communication terminal devices, a radio format for signals transmitted to and received from said communication terminal device.2. The communication system according to claim 1 , wherein said radio format is set for each of said communication terminal devices on the basis of a type of use including a moving speed of said communication terminal device.3. The communication system according to claim 1 , wherein said base station device is configured to change said radio format for said communication terminal device in accordance with information about a change in an environment of a radio communication between said communication terminal device and said base station device and a change including a location of said communication terminal device.4. The ...

Metal Wiring and Method of Manufacturing the Same, and Metal Wiring Substrate and Method of Manufacturing the Same

A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle α in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate. 1wherein edges of the conductive film are tapered so as to have a taper angle α of 5 to 85°.. A metal wiring comprising a conductive layer comprising at least one selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, 1. Field of the InventionThe present invention relates to a metal wiring and its manufacturing method using a thin film technology. Further, the invention relates to a metal wiring substrate (a substrate having metal wirings thereon) and its manufacturing method.2. Description of the Related ArtIn recent years, a development of a semiconductor device having a large area integrated circuit comprising thin film transistors (TFTs) is progressing, the TFT being formed by using a semiconductor thin film (several to several hundreds of nm in thickness) deposited over a substrate with an insulating surface. An active matrix liquid crystal display device, a light emitting device, and a close contact type image sensor are known as typical examples. In particular, since the TFT using a crystalline silicon film (typically, a polysilicon film) as an active region (hereinafter referred to as polysilicon TFT) has a high field effect mobility, it ...

POWER TRANSMISSION APPARATUS

A power transmission apparatus including: a case having a first oil storage configured to store oil at a bottom thereof; a rotating body rotatably housed in the case and having a second oil storage configured as an approximately cylindrical rotating body for transmitting power and configured to store oil therein; and an introducing portion configured to introduce oil from the first oil storage into the second oil storage. 1. A power transmission apparatus comprising:a case having a first oil storage configured to store oil at a bottom thereof;a rotating body rotatably housed in the case and having a second oil storage configured as an approximately cylindrical rotating body for transmitting power and configured to store oil therein; andan introducing portion configured to introduce oil from the first oil storage into the second oil storage.2. The power transmission apparatus according to claim 1 , whereinthe rotating body is a ring gear having inner circumferential teeth, wherein the power transmission apparatus further comprising:a plurality of small-diameter gears engaged with the ring gear; anda plurality of large-diameter gears rotating coaxially with the plurality of small-diameter gears, whereinthe introducing portion introduces oil splashed by the plurality of large-diameter gears from the first oil storage into the second oil storage.3. The power transmission apparatus according to claim 2 , whereineach of the plurality of large-diameter gears has a slope portion opposed to the second oil storage.4. The power transmission apparatus according to claim 2 , whereinthe plurality of large-diameter gears includes a first large-diameter gear and a second large-diameter gear circumferentially adjacent to each other around a rotation axis of the ring gear, wherein the power transmission apparatus further comprising:a partition wall member having an outer circumferential surface of a cylindrical shape and disposed between the first large-diameter gear and the second ...

Light-Emitting Device and a Method of Manufacturing Light-Emitting Device

To provide a highly reliable light-emitting device and especially a light-emitting device which can be formed without use of a metal mask and includes a plurality of light-emitting elements. A structural body at least an end of which has an acute-angled shape is provided so that the end can pass downward through an electrically conductive film formed over the insulating layer and can be at least in contact with an insulating layer having elasticity, thereby physically separating the electrically conductive film, and the electrically conductive films are thus electrically insulated from each other. Such a structure may be provided between adjacent light-emitting elements so that the light-emitting elements can be electrically insulated from each other in the light-emitting device. 117-. (canceled)18. A method of forming a light-emitting device , comprising the steps of:forming an insulating layer;forming a layer including a light-emitting organic compound so that the layer including the light-emitting organic compound covers a first lower electrode layer, a second lower electrode layer, and the insulating layer;forming a conductive film over the layer including the light-emitting organic compound; andseparating the conductive film over the insulating layer into a first upper electrode layer and a second upper electrode layer by a structural body,wherein the insulating layer covers at least an edge portion of the first lower electrode layer, an edge portion of the second lower electrode layer, and a region between the first lower electrode layer and the second lower electrode layer, andwherein at least an end of the structural body has an acute-angled shape.19. The method of forming a light-emitting device according to claim 18 , wherein the layer including the light-emitting organic compound and the conductive film are each formed without use of a metal mask.20. The method of forming a light-emitting device according to claim 18 , wherein the insulating layer ...

LID FORMING DEVICE

A lid forming device of a cardboard box using a first flap with a slit and a second flap to be extended after being bent into a mountain shape is disclosed. The lid forming device includes first and second folding mechanisms. The fist folding mechanism folds the first flap in a direction of closing the opening. The second folding mechanism bends the second flap into a mountain shape and inserts part of the second flap into the slit of the first flap while extending the second flap. The second folding mechanism includes first and second retaining units. The first retaining unit retains a first face of the second flap located between a free end of the second flap and a bend line set beforehand in the second flap. The second retaining unit retains a second face of the second flap located between an anchored end and the bend line. 1. A lid forming device that forms a lid of a cardboard box using , out of a group of flaps having a cantilever structure and provided on edges of an opening of the cardboard box , a first flap in which a slit is formed and a second flap to be extended after being bent into a mountain shape , the lid forming device comprising:a first folding mechanism configured to fold the first flap in a direction in which the first flap closes the opening; anda second folding mechanism configured to bend the second flap into a mountain shape and insert part of the second flap into the slit of the first flap while extending the second flap, a first retaining unit configured to retain a first face of the second flap located between a free end of the second flap and a bend line set beforehand in the second flap and', 'a second retaining unit configured to retain a second face of the second flap located between an anchored end of the second flap and the bend line., 'wherein the second folding mechanism includes'}2. The lid forming device according to claim 1 , wherein the second folding mechanism is further configured to retain the second flap using the first ...

HETEROCYCLIC COMPOUND

Provided is a compound that may have a superior CDK12 inhibitory action and is expected to be useful as a prophylactic or therapeutic drug for cancer and the like. A compound represented by the following formula (I): 2. The compound according to claim 1 , wherein{'sup': 1', '2', '3', '2', '3, 'sub': 1-6', '6-14', '6-14', '1-6', '6-14', '6-14', '6-14', '1-6', '6-14', '1-6', '3-10', '6-14', '6-14, 'claim-text': [{'sub': 6-14', '1-6', '2-6', '6-14', '1-6, 'ring A is a Caromatic hydrocarbon ring or a 5- to 14-membered aromatic heterocycle each of which is optionally further substituted by 1-5 substituents selected from (1) a halogen atom, (2) a cyano group, (3) a hydroxy group, (4) an optionally substituted Calkyl group, (5) an optionally substituted Calkenyl group, (6) an optionally substituted Caryl group, (7) an optionally substituted Calkoxy group, (8) an optionally substituted amino group, (9) a carboxy group, (10) an optionally substituted carbamoyl group, (11) an optionally substituted 3- to 14-membered non-aromatic heterocyclic group (the 3- to 14-membered non-aromatic heterocyclic group also includes one having a spiro ring structure) and (12) an optionally substituted 5- to 14-membered aromatic heterocyclic group;'}, 'ring B is a cyclohexane ring not substituted further; and', {'sub': 1-6', '6-14', '1-6', '6-14, 'ring C is a pyridine ring (that is, X is CH) or a pyrimidine ring (that is, X is N) each of which is optionally further substituted by 1 to 3 substituents selected from (1) a halogen atom, (2) a cyano group, (3) an optionally substituted Calkyl group, (4) an optionally substituted Caryl group, (5) an optionally substituted Calkoxy group, (6) an optionally substituted Caryloxy group, (7) an optionally substituted 3- to 14-membered non-aromatic heterocyclic-oxy group, (8) an optionally substituted amino group, (9) an optionally substituted carbamoyl group, (10) an optionally substituted 3- to 14-membered non-aromatic heterocyclic group (the 3- to 14- ...

DIFFERENTIAL APPARATUS

A differential apparatus including a rotating body configured to rotate around a rotation axis to transmit power to a differential mechanism, and a groove formed on the rotating body and configured to guide an oil scooped up by rotation of the rotating body inward in a rotation radial direction of the rotating body. 1. A differential apparatus comprising:a rotating body configured to rotate around a rotation axis to transmit power to a differential mechanism; anda groove formed on the rotating body and configured to guide an oil scooped up by rotation of the rotating body inward in a rotation radial direction of the rotating body.2. The differential apparatus according to claim 1 , whereina front end portion of the groove in a rotation direction of the rotating body is formed outward in the rotation radial direction of the rotating body than a rear end portion of the groove in the rotation direction of the rotating body, whereinan oil guiding portion between the front end portion and the rear end portion of the groove extends so as to get closer to the rotation axis of the rotating body gradually from the front end portion to the rear end portion.3. The differential apparatus according to claim 1 , whereinan opening portion of the groove is formed on a surface perpendicular to the rotation axis of the rotating body.4. The differential apparatus according to claim 3 , further comprising:a rib formed on the rotating body so as to protrude axially along an outer circumference of the groove.5. The differential apparatus according to claim 1 , further comprising:a lid provided on the rotating body so as to partially block an opening portion of the groove.6. The differential apparatus according to claim 1 , whereinan opening portion of the groove is formed on the rotating body so as to oppose to the rotation axis of the rotating body.7. The differential apparatus according to claim 1 , whereinthe rotating body is a differential case configured to house the differential ...

Heteroaryl compounds useful as inhibitors of sumo activating enzyme

Disclosed are chemical entities which are compounds of formula (I): or pharmaceutically acceptable salts thereof; wherein Y, R a , R a ′, R b , R c , X 1 , X 2 , X 3 , R d , Z 1 , and Z 2 have the values described herein and stereochemical configurations depicted at asterisked positions indicate absolute stereochemistry. Chemical entities according to the disclosure can be useful as inhibitors of Sumo Activating Enzyme (SAE). Further provided are pharmaceutical compositions comprising a compound of the disclosure and methods of using the compositions in the treatment of proliferative, inflammatory, cardiovascular, and neurodegenerative diseases or disorders.

POWER SYSTEM

A power system includes: a rotating body; a housing accommodating the rotating body; and a storage portion provided at a bottom of the housing. A part of the rotating body is located in the storage portion. The housing includes: a supply target portion; and a direction changing portion. The direction changing portion includes: a collecting portion that is gradually inclined toward a downstream side in a rotation direction of the rotating body so as to be separated from an outer periphery of the rotating body and that receives the liquid medium scattered by the rotating body; and a guiding portion that is provided so as to cross a lower end of the collecting portion and that is gradually inclined downward toward the supply target portion. 1. A power system comprising:a rotating body;a housing that accommodates the rotating body; anda storage portion that is provided at a bottom of the housing to store a liquid medium, whereina part of the rotating body is located in the storage portion, a supply target portion that needs to be lubricated or cooled and that is provided on one side in an axial direction of the rotating body; and', 'a direction changing portion that is provided on an inner surface of the housing and that changes a flow direction of the liquid medium scattered by the rotating body toward the supply target portion, and, 'the housing comprises a collecting portion that is gradually inclined toward a downstream side in a rotation direction of the rotating body so as to be separated from an outer periphery of the rotating body and that receives the liquid medium scattered by the rotating body; and', 'a guiding portion that is provided so as to cross a lower end of the collecting portion and that is gradually inclined downward toward the supply target portion., 'the direction changing portion includes2. The power system according to claim 1 , whereinthe direction changing portion is recessed in the inner surface of the housing.3. The power system according to ...

Water supply system using variable speed pump

Heteroaryl compounds useful as sumo activating enzyme inhibitors.

<p>COMPUESTOS DERIVADOS DE HETEROARILO, COMO INHIBIDORES DE LA ENZIMA ACTIVADORA DE SUMO; COMPOSICION FARMACEUTICA QUE LOS COMPRENDE; Y SU USO PARA EL TRATAMIENTO DEL CANCER.</p> <p> COMPOUNDS DERIVED FROM HETEROARILO, AS INHIBITORS OF SUMO ACTIVATING ENZYME; PHARMACEUTICAL COMPOSITION THAT UNDERSTANDS THEM; AND ITS USE FOR CANCER TREATMENT. </p>

Production of compound oxide superconducting thin film

(57)【要約】 【課題】 基材への密着性に優れ、より優れた反射防止 性、遮光性、摺動性を有する塗装膜を有するレンズ鏡筒 ユニット及びその構造部品を提供することにある。 【解決手段】 基材に対して反射防止性、遮光性、摺動 性等を付与する塗装膜として、微粒子を分散した電着塗 料を用い電気泳動作用により形成された電着塗装膜を使 用する。

Photoelectric type smoke sensor with self-diagnosing circuit capable of monitoring dust cleaner mesh choking

Unidirectional/single crystal solidified apparatus

(57)【要約】 【課題】 ブロー成形する際にパリソンの切除線の全周 又は一部を、成形品の角部の稜線よりも所定の内側に設 けることにより、成形品を例えば冷蔵庫のドアに採用し た場合に、そのドアを閉塞した状態で切除線（樹脂の境 界線）を目視不可能なように隠すことができ、成形品の 外観体裁の向上が図れるようにする。 【解決手段】 ダイ２８から複数の熱可塑性樹脂を円柱 状に押し出してなるパリソン３０を、型開きされた金型 １６，１７に供給する。この金型１６，１７を型締めし てブロー成形を行なう際に、前記パリソン３０の切断位 置を成形品３の角部の稜線１２よりも内側に設けるよう にした。

Polishing composition and method for forming wiring structure using the same

(57)【要約】 【課題】 タングステンを高速度で研磨することができ ると同時に、鉄による被研磨物の汚染を防止することが できる研磨用組成物及びそれを用いた配線構造の形成方 法を提供する。 【解決手段】 （Ａ）二酸化ケイ素、（Ｂ）過ヨウ素酸 及びその塩から選ばれる少なくとも一種、（Ｃ）水酸化 テトラアルキルアンモニウム及び塩化テトラアルキルア ンモニウムから選ばれる少なくとも一種、（Ｄ）塩酸、 並びに（Ｅ）水を混合して研磨用組成物を調製した。

Multi-stage pump

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Mobile communication system

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Production of beta-type copper phthalocyanine pigment

(57)【要約】 【課題】 着色力が高く、鮮明な色相を呈するβ型銅フ タロシアニン顔料を、生産性、経済性、品質安定性、汎 用性等を損なうことなく製造するための製造方法を提供 すること。 【解決手段】 有機溶剤を含む粗製β型銅フタロシアニ ン反応混合物から有機溶剤を除去して得られた粗製β型 銅フタロシアニンを、精製することなく、水及び有機溶 剤、好ましくは沸点３０〜１５０℃の有機溶剤と共に粉 砕媒体の存在下で機械的に湿式粉砕して水性懸濁液と し、次いで有機溶剤を除去した後、洗浄する。

Silver halide photographic sensitive material

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Polishing device and method

(57)【要約】 【課題】 研磨工程において連続してポリッシング対象 物の管理を行うことによりポリッシング対象物が割れる ことによる損害を抑制できるポリッシング装置と方法を 提供することを目的とする。 【解決手段】 ターンテーブル２０とトップリング本体 ３とを有し、前記ターンテーブル２０とトップリング本 体３との間に半導体ウエハ６を介在させて所定の圧力で 押圧することによって半導体ウエハ６を研磨し平坦且つ 鏡面化するポリッシング方法において、半導体ウエハ６ のポリッシングの際、半導体ウエハ６の背面に供給する 流体の供給圧力と供給流量の少なくとも一方を検出する ことにより、前記圧力と流量の少なくとも一方が変化し たときにポリッシングを停止する。

Connection control system for cordless telephone system

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Semiconductor device and manufacturing method thereof

By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.

Semiconductor device and manufacturing method thereof

By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.

Semiconductor device and manufacturing method thereof

By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.

Semiconductor device and manufacturing method thereof

By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.

Electroluminescence display device

Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured to emit light through the counter substrate, and a space between the substrate and the counter substrate is filled with a filler. The electroluminescence device is featured by the tapered side surface of a gate electrode of the thin film transistor.

Method of manufacturing semiconductor device

In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and along with improving the operating characteristics and the reliability of the semiconductor device, the manufacturing cost is reduced and the yield is increased by reducing the number of process steps. A semiconductor device has a semiconductor layer, an insulating film formed contacting the semiconductor layer, and a gate electrode having a tapered portion on the insulating film, in the semiconductor device, the semiconductor layer has a channel forming region, a first impurity region for forming a source region or a drain region and containing a single conductivity type impurity element, and a second impurity region for forming an LDD region contacting the channel forming region, a portion of the second impurity region is formed overlapping a gate electrode, and the concentration of the single conductivity type impurity element contained in the second impurity region becomes larger with distance from the channel forming region.

Semiconductor device and manufacturing method thereof

In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and along with improving the operating characteristics and the reliability of the semiconductor device, the manufacturing cost is reduced and the yield is increased by reducing the number of process steps. A semiconductor device has a semiconductor layer, an insulating film formed contacting the semiconductor layer, and a gate electrode having a tapered portion on the insulating film, in the semiconductor device, the semiconductor layer has a channel forming region, a first impurity region for forming a source region or a drain region and containing a single conductivity type impurity element, and a second impurity region for forming an LDD region contacting the channel forming region, a portion of the second impurity region is formed overlapping a gate electrode, and the concentration of the single conductivity type impurity element contained in the second impurity region becomes larger with distance from the channel forming region.

Digital controller

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Method for processing silver halide black-and-white photosensitive material

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Nitrogen-containing heterocyclic compound

The present invention provides a novel compound having a superior activity as an ERR-α modulator and useful as an agent for the prophylaxis or treatment of ERR-α associated diseases. The present invention relates to a compound represented by the formula wherein each symbol is as defined in the specification, or a salt thereof.

Prophylactic or therapeutic agent for cancer

Silver halide photographic sensitive material having high sensitivity

Semiconductor device

【課題】基板の大型化に対応し得る金属配線を作製することを目的とする。【解決手段】本発明は、絶縁表面上に少なくとも一層の導電膜を形成し、前記導電膜上にレジストパターンを形成し、前記レジストパターンを有する導電膜にエッチングを行い、バイアス電力密度、ＩＣＰ電力密度、下部電極の温度、圧力、エッチングガスの総流量、エッチングガスにおける酸素または塩素の割合に応じてテーパー角αが制御された金属配線を形成することを特徴としている。このようにして形成された金属配線は、幅や長さのばらつきが低減されており、基板の大型化にも十分対応し得る。【選択図】なし

Thioether compound and liquid crystal composition

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Liquid crystal display device and liquid crystal display system

(57)【要約】 【課題】 従来の液晶表示装置は、視野角の広狭を液晶 表示装置の使用状況に応じて、適宜変更することができ なかった。 【解決手段】 複数の走査信号線Ｇｎと複数の画像信号 線Ｓｎとの交点に配置されたスイッチング素子を有する 画素部の画像信号線選Ｓｎに階調信号電圧を出力するソ ースドライバ３に、タイミング制御回路５から表示デー タ信号を、階調信号電圧回路６から階調参照電圧を出力 して、この階調参照電圧の設定値を設定値切換回路１１ によって切換えることによってソースドライバ３の出力 する階調信号電圧を変化させて視野角を変更する。

Method and apparatus for removing solvent in acrylic yarn

(57)【要約】 【課題】アクリル系繊維の製造工程における溶媒除去設 備の設置スペース、設備費、変動費などの合理化を目的 とする。 【解決手段】アクリル系繊維の製造工程において、紡糸 ノズルから紡出されて凝固浴中で凝固後、乾燥前の湿潤 状態にあるアクリル系繊維をスチーム雰囲気中に導入 し、該スチーム雰囲気中を蛇行して通過させてアクリル 系繊維にスチーム処理を施す、または、このスチーム処 理と水洗処理を併用してアクリル系繊維中の溶媒を除去 する。

Pyrrole compounds

The present invention provides a compound having a superior acid secretion inhibitory effect and showing an antiulcer activity, which is represented by the formula (I) wherein R1 is an optionally substituted cyclic group, R2 is a substituent, R3 is an optionally substituted alkyl group, an acyl group, an optionally substituted hydroxy group, an optionally substituted amino group, a halogen atom, a cyano group or a nitro group, R4 and R5 are each a hydrogen atom, an optionally substituted alkyl group, an acyl group, an optionally substituted hydroxy group, an optionally substituted amino group, a halogen atom, a cyano group or a nitro group, R6 and R6' are each a hydrogen atom or an alkyl group, and n is an integer of 0 - 3, or a salt thereof.

Pyrrole compounds

The present invention provides a compound having a superior acid secretion inhibitory effect and showing an antiulcer activity, which is represented by the formula (I) wherein R 1 is an optionally substituted cyclic group, R 2 is a substituent, R 3 is an optionally substituted alkyl group, an acyl group, an optionally substituted hydroxy group, an optionally substituted amino group, a halogen atom, a cyano group or a nitro group, R 4 and R 5 are each a hydrogen atom, an optionally substituted alkyl group, an acyl group, an optionally substituted hydroxy group, an optionally substituted amino group, a halogen atom, a cyano group or a nitro group, R 6 and R 6′ are each a hydrogen atom or an alkyl group, and n is an integer of 0-3, or a salt thereof.

Pyrrole compounds

The present invention provides a compound which is represented by the formula wherein R 4 ' is a halogen atom, R 5 is a hydrogen atom, an optionally substituted alkyl group, an acyl group, an optionally substituted hydroxy group, an optionally substituted amino group, a halogen atom, a cyano group or a nitro group, and R 15 is an optionally substituted hydrocarbon group or an optionally substituted heterocyclic group, or a salt thereof.

Pyrrole compounds

The present invention provides a compound having a superior acid secretion inhibitory effect and showing an antiulcer activity, which is represented by the formula (I) wherein R1 is an optionally substituted cyclic group, R2 is a substituent, R3 is an optionally substituted alkyl group, an acyl group, an optionally substituted hydroxy group, an optionally substituted amino group, a halogen atom, a cyano group or a nitro group, R4 and R5 are each a hydrogen atom, an optionally substituted alkyl group, an acyl group, an optionally substituted hydroxy group, an optionally substituted amino group, a halogen atom, a cyano group or a nitro group, R6 and R6' are each a hydrogen atom or an alkyl group, and n is an integer of 0 - 3, or a salt thereof.

Silver halide photographic sensitive material

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Complex switch

(57)【要約】 【課題】 電気的に独立した複数の回路を同時に切替調 整することができる複合スイッチに関し、一つの回路用 として使用するために二つの切替スイッチを短絡する機 能をこのスイッチ自身が有するものを提供することを目 的とする。 【解決手段】 二組の固定接点１２，１３を接点基板１ １の中心に対して対称位置に配設し、接点基板１１の中 心を回転中心とする回転体１８に保持されて、二組の固 定接点１２，１３に弾接する二つの回転弾性接点体１４ Ａ，１５Ａとそれぞれ導通した二つの対向弾性接点脚１ ４Ｂ，１５Ｂを配し、内操作軸２１により回転軸線方向 に動かされる中心可動接点２３により二つの対向弾性接 点脚１４Ｂ，１５Ｂ間を接離する構成とすることによ り、二つの回路を同時に切替調整でき、一つの回路の切 替調整用として使用するために、二つの切替スイッチを 短絡する機能を有する複合スイッチを実現できる。

Method for manufacturing electrode active material

【課題】Ｌｉ ｗ Ａ ｘ ＤＯ ４ （但し、ＡはＭｎ、Ｃｏの群から選択される少なくとも１種、ＤはＰ、Ｓｉ、Ｓの群から選択される１種または２種以上、０＜ｗ≦４、０＜ｘ≦１．５）粒子の表面に、Ｌｉ ｙ Ｅ ｚ ＰＯ ４ （但し、ＥはＦｅ、Ｎｉの群から選択される少なくとも１種、０＜ｙ≦２、０＜ｚ≦１．５）及び炭素質電子伝導性物質を含む被覆層を、膜質良くかつ安価に形成することが可能な電極活物質の製造方法を提供する。 【解決手段】Ｌｉ ｗ Ａ ｘ ＤＯ ４ からなる粒子を、硝酸リチウム、酢酸リチウムの群から選択される少なくとも１種を含むＬｉ源と、硝酸鉄(III)、クエン酸鉄(III)の群から選択される少なくとも１種を含むＦｅ源と、Ｈ ３ ＰＯ ４ を含むＰＯ ４ 源と、水溶性有機物を含む炭素源とを含む水性溶液中に懸濁してなるスラリーを、乾燥し、次いで、非酸化性雰囲気下にて熱処理する。 【選択図】なし

Optically active-2-substituted propyl ethers and liquid crystal composition

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Optically active-2-alkoxy-propyl ethers and liquid crystal composition

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Digital controller

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Ceramic heater

(57)【要約】 【課題】室温から１５００℃の高温まで使用され、初期 抵抗が低く、耐酸化性に優れ、高温で長時間発熱した場 合においてもヒータ特性の劣化の小さい耐久性に優れた セラミックヒータを提供する。 【解決手段】窒化珪素質焼結体からなる絶縁性母材１中 に発熱体２を埋設してなるセラミックヒータにおいて、 窒化珪素質焼結体が、窒化珪素主相と、希土類元素、酸 素および珪素を含み、ダイシリケート相を主結晶とする 粒界相により構成され、発熱体２が、ＷＣ、ＴａＮ、Ｍ ｏ 2 Ｃのうちのいずれかを主成分とし、添加物として窒 化珪素、窒化ホウ素および炭化珪素のうちの少なくとも １種を含み、且つ発熱体２の絶縁性母材１との界面に発 熱体主成分を構成する金属の珪化物相３が発熱体２の最 小厚みＬ 1 の２５％以下の厚みＬ 2 で存在することを特 徴とする。

Negative type silver halide photosensitive material

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Sewage evaporator

(57)【要約】 【課題】汚水を吸水させた吸水シートを、天日の作用と 送風ファンの作用とを併用して乾燥させることにより、 汚水を蒸発させる。 【解決手段】波状コンベア装置Ｃの上方走行部に吸水シ ートＳを波状に配設し、前記波状コンベア装置Ｃを間欠 作動させることにより、吸水シートＳに蒸発処理させる 汚水Ｗを吸水させる処理汚水吸水工程と、吸水シートＳ に吸水された汚水Ｗを、天日の作用と送風ファンの作用 とを併用して蒸発させる強制蒸発処理工程とを繰り返 す。

Preparation of high purity 3,3'-dinitro-4,4'- dichlorodiphenylsulfone

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Photocatalyst coating liquid and coating base material

(57)【要約】 【課題】 光触媒活性と膜強度とに優れた効果を有す る光触媒膜を形成することのできる光触媒コーティング 液、およびそれを用いて形成された光触媒膜を有するコ ーティング基材を提供することを課題とする。 【解決手段】 Ｔｉアルコキシドの加水分解物および 平均粒径 100ｎｍ以下のアナターゼ型ＴｉＯ 2 微粒子を 含有させた光触媒コーティング液、およびこの光触媒コ ーティング液を用いて、耐熱性基板上に塗布、焼成させ て形成した光触媒膜を有するコーティング基材を構成す る。