Модулятор электромагнитного излучения субтерагерцового и терагерцового диапазона для систем высокоскоростной беспроводной связи

Изобретение относится к оптоэлектронике, а именно к модуляторам электромагнитного излучения, в частности, работающим в субтерагерцовом и терагерцовом диапазонах частот (100-10000 ГГц). Изобретение может использоваться в областях науки и техники, использующих данные диапазоны частот, в частности, при создании систем высокоскоростной беспроводной связи. Сущностью изобретения является устройство для амплитудной модуляции с частотами до 1 ТГц, работа которого основана на изменении коэффициента пропускания схемы на основе копланарного волновода, сформированной на подложке из полупроводникового материала. Коэффициент пропускания схемы изменяется вследствие изменения концентрации неравновесных носителей тока в полупроводниковом материале под действием импульсов управляющего источника оптического излучения видимого или ИК-диапазона. Технический результат заключается в увеличении частоты модуляции, а также уменьшении требуемой рабочей мощности управляющего источника оптического излучения. 3 ил.

ФОТОПРЕОБРАЗОВАТЕЛЬ ЛАЗЕРНОГО ИЗЛУЧЕНИЯ

Изобретение относится к полупроводниковой оптоэлектронике и может быть использовано для создания фотопреобразователей (ФП) лазерного излучения. Фотопреобразователь лазерного излучения на основе фоточувствительной полупроводниковой структуры с чередующимися токоотводящими полосковыми контактами (3) на плоской фронтальной поверхности включает устройство для изменения направления лазерного излучения в виде нанесенного на антиотражающее покрытие (4) и на полосковые контакты (3) оптического покрытия (6), прозрачного для лазерного излучения. В фронтальной плоской поверхности оптического покрытия (6) выполнены проходящие над полосковыми контактами (3) V-образные канавки (8), ориентированные параллельно полосковым контактам (3). Проекции V-образных канавок (8) на фронтальную поверхность фотопреобразователя перекрывают полосковые контакты (3), а стороны V-образных канавок (8) выполнены наклоненными под определенным углом к нормали к фронтальной поверхности структуры фотопреобразователя с определенным ...

ФОТОЭЛЕКТРИЧЕСКИЙ ОПТОВОЛОКОННЫЙ МОДУЛЬ

Изобретение относится к области радиофотоники и может быть использовано при конструировании устройств возбуждения антенн и активных фазированных антенных решеток для связи, радиолокации и радионавигации. Сущность: фотоэлектрический оптоволоконный модуль включает оптоволокно и полупроводниковый гетероструктурный фотодиод, включающий узкозонный фотоактивный слой, заключенный между двумя широкозонными слоями. На тыльной поверхности гетероструктуры выполнены слой диэлектрика с показателем преломления <1,4 и слой металла с коэффициентом отражения более 96%. Фотодиод выполнен в виде основного цилиндра с двумя выступами, выполненными в виде частей дополнительных цилиндров. Площадь поперечного сечения основного цилиндра установлена превышающей в 20-50 раз суммарную площадь поперечных сечений выступов. При этом фронтальная поверхность одного из выступов установлена в одной плоскости с фронтальной поверхностью гетероструктуры, а фронтальная поверхность другого выступа выполнена примыкающей к торцу ...

Lichterfassungsvorrichtung und Verfahren zur Herstellung einer Lichterfassungsvorrichtung

Ein Verfahren zur Herstellung einer Lichterfassungsvorrichtung umfasst einen ersten Schritt des Vorbereitens eines rückbeleuchteten Lichtempfangselements, das eine Vielzahl von Lichtempfangsabschnitten und einen Graben enthält, der zu einer ersten Hauptoberfläche offen ist, um die benachbarten Lichtempfangsabschnitte voneinander zu isolieren; einen zweiten Schritt des Anordnens des Lichtempfangselements auf einem Verdrahtungssubstrat, so dass die erste Hauptoberfläche des Lichtempfangselements dem Verdrahtungssubstrat gegenüberliegt; einen dritten Schritt des Bildens einer Harzform, die mindestens eine Position erreicht, die weiter von dem Verdrahtungssubstrat entfernt ist als ein Endabschnitt auf einer zweiten Hauptoberflächenseite des Grabens in einer Dickenrichtung des Verdrahtungssubstrats, auf dem Verdrahtungssubstrat, um eine gesamte Seitenfläche des Lichtempfangselements zu umgeben; und einen vierten Schritt des Polierens des Lichtempfangselements und der Harzform von der zweiten ...

Lichtempfindliches Bauelement mit erhöhter Blauempfindlichkeit, Verfahren zur Herstellung und Betriebsverfahren

Es wird ein lichtempfindliches Bauelement vorgeschlagen, welches einen Halbleiterübergang zwischen einer dünnen relativ hochdotierten epitaktischen Schicht und einem relativ niedrig dotierten Halbleitersubstrat aufweist. Außerhalb eines Lichteinfallsfensters ist zwischen epitaktischer Schicht und Halbleitersubstrat eine isolierende Schicht angeordnet. Die Dicke der epitaktischen Schicht beträgt dabei weniger als 50 nm, sodass ein großer Anteil der im Lichteinfallsfenster einfallenden Lichtquanten im niedrig dotierten Halbleitersubstrat absorbiert werden kann.

Integrated circuit photodetectors

Integrated circuit photodetector with an embedded microlens

A semiconductor integrated circuit 100 or a method of fabrication wherein semiconductor integrated circuit 100 includes light sensitive device 108 e.g. p-n junction photodiode 108, integral with semiconductor substrate 320 and further comprising cover dielectric layer 410 over light sensitive device 108 and a lens formation dielectric layer (110a, fig. 4) used to form embedded convex microlens 640. Light is transmissible through microlens 640 and cover dielectric layer 410. Microlens 640 directs light onto light sensitive device 108. Photoresist (440, fig. 4) can be reflowed and etched (fig. 5) to form microlens 640. Cover dielectric layer 410 may be a field oxide and lens formation dielectric layer 110a may be a silicon oxynitride. Dielectric cover layer 410 may be adjusted in thickness and refractive index to increase the transmitted component of incident light as well as provide silicide blocking capability.

SEMICONDUCTIVE DEVICES

... 1369357 Semi-conductor devices WESTERN ELECTRIC CO Inc 8 Feb 1972 [12 Feb 1971] 5763/72 Heading H1K The avalanche transistor shown (which may be photosenstivie and have transparent electrodes) has diffused emitter 18 and (non-contacted) base-16 regions formed in a high resistivity layer 14 epitaxially grown on a low resistivity substrate 12, the layer 14 and substrate 12 together forming the collector zone. (In a variant the function of emitter and collector may be interchanged). The structure is formed by diffusing boron into the arsenic-doped collector structure right through the epitaxial layer 14 to form a base region which extends from the oxide masking edge further laterally then vertically; by enlarging the masking aperture; and by diffusing phosphorus into the base region to form the emitter region 18. (The collector contact zone 28 is formed simultaneously with the emitter). By this method the surface breakdown voltage of the emitter junction is raised relative to that in the bulk ...

Optical detector

An optical detector 406 has optical gain (concentrator) elements such as compound parabolic concentrators 401, 407, 408 and associated photodetectors 403, 409, 410. Each optical gain element has a respective optical axis 402, 411, 412 and each photodetector element has a respective optical axis. At least one of the optical gain elements is configured such that its optical axis is inclined with respect to the optical axis of an associated photodetector. The optical axis of at least one optical gain element may be inclined at an angle of inclination of greater than 5 degrees with respect to the optical axis of an associated photodetector. The detector may be used in light fidelity (Lifi) applications and the optical gain elements may also be lenses such as Fresnel lenses, parabolic reflectors or total internal reflection concentrators.

Semiconductor device and fabrication method

PHOTOELECTRIC TRANSFORMATION DEVICE AND PICTURE RECORDING SYSTEM

INTEGRATION OF OPTO-ELECTRONIC ELEMENTS

STRAHLUNGSEMPFINDLICHER HALBLEITERDETEKTOR MIT OBERFLACHENSPERRSCHICHT

SCHALTUNGSANORDNUNG MIT MINDESTENS EINEM STRAHLUNGSGESPEISTEN SCHALTUNGSELEMENT UND HALBLEITERANORDNUNG ZUR ANWENDUNG IN EINER DERARTIGEN SCHALTUNGSANORDNUNG

SWITCHING CONFIGURATION WITH AT LEAST A RADIATION-FED CIRCUIT ELEMENT AND SEMICONDUCTOR ARRANGEMENT FOR APPLICATION IN A SUCH SWITCHING CONFIGURATION

SEMICONDUCTOR ARRANGEMENT WITH SEVERAL TRANSITIONS.

Asymmetrical Phototransistor

SEMICONDUCTOR MULTIPLE STATE MICROWAVE DEVICE

The invention disclosed relates to a highly responsive multiple state device incorporating a polyconducting material. High response is achieved by providing an arrangement whereby the polyconducting material is directly subjected to incident radio-frequency irradiation e.g. microwave energy. The device has many applications including switching or indicating the radio frequency energy and actuating or controlling some external device or circuit.

RADIATION-ENERGIZED TRANSISTOR CIRCUIT

SEMICONDUCTOR RADIATION DETECTOR AND METHOD OF MANUFACTURING SAME

p-n-Gleichrichter mit Mittelzone

Photoelektrische Zelle.

Anordnung mit einem photoempfindlichen Halbleiter.

Verfahren zur Herstellung eines lichtempfindlichen Halbleiterelements und darnach hergestellte lichtempfindliche Zelle

Strahlungsregistrierende Halbleiteranordnung mit einem Phototransistor

Nuclear radiation measuring cell - with a diamond electrode - carrying plate

The cell is based on a diamond plate to whose incident radiation side a first electrode is applied forming a barrier layer with the plate and connected to an amplifier and recorder. On the reverse side of the plate is an electrode of charge carrier injection material connected via a resistor to a current source. The field produced is sufficient to ensure max. drift velocity of charge carriers in the diamond and the plate thickness between the electrodes is not greater than the drift of the carriers during their life. The cell is highly sensitive, reliable and relatively cheap due to the use of electrodes for each major function.

Nuclear particle detecter employing a diamond crystal

Nuclear part icle detecter employing a diamond crystal.. M6C. Comprising a plate of an improved diamond crystal, carries contacts on opposite faces and has a thickness less than the free length of the charge carriers. One electrode, e.g. a gold film through which the radiation passes, blocks the charge carriers and is connected directly to the amplifier and counter; the other, with a suitable treated crystals surface, e.g. boron doped, injects charge carriers and is connected to the source. Absence of current surges overcomes need for decoupling condensers necessary hitherto, thus increasing sensitivity. Higher working temperatures with lower signal to noise ratios are possible.

SCHALTUNGSANORDNUNG MIT MINDESTENS EINEM MIT HILFE VON STRAHLUNG GESPEISTEN SCHALTUNGSELEMENT.

Dispositif semi-conducteur photosensible et procédé de fabrication dudit dispositif

Lichtelektrische Einrichtung

Nuclear radiation detector - with low noise

Detector has a cell connected to an amplifier recorder and to a d.c. power supply. The cell has a plate of crystalline diamond with a barrier electrode to charge carriers on one face and a charge carrier injection electrode on the other. Both are transparent to incident radiation and have a atomic number 15. The thickness of the plate between the electrodes is not greater than the drift of the charge carriers, during their life time when under the electric field producing max drift velocity. The barrier electrode feeds the amplifier and the d.c supply is connected to the charge carrier injector via a limiting resistor. The cell has low noise low self capacitance and is insensitive to background gamma radiation.

Strahlungsempfindliche Halbleitervorrichtung mit einem Detektor mit einer Oberflächensperrschicht

Oberflächenbarriere-Detektor für Kernstrahlung und Verfahren zu dessen Herstellung

Light detection element and method of manufacturing the same

A backside-illuminated energy line detecting element

SEMICONDUCTOR STRUCTURE COMPRISING A ABSORBENT IN A GROUND CAVITY FOCUSING

Using method of preparation of the devices of the layers of transition between semiconductors from the types p and N

LOW ENERGY NUCLEAR RADIATION DETECTOR OF THE SEMICONDUCTOR TYPE

PHOTOSENSOR

반도체 광검출 소자

... 서로 대향하는 제1 주면(1a) 및 제2 주면(1b)을 가짐과 아울러 제1 주면(1a)측에 p＋형 반도체 영역(3)이 형성된 n－형 반도체 기판(1)을 준비한다. n－형 반도체 기판(1)의 제2 주면(1b)에 있어서 적어도 p＋형 반도체 영역(3)에 대향하는 영역에, 펄스 레이저 광을 조사하여 불규칙한 요철(10)을 형성한다. 불규칙한 요철(10)을 형성한 후에, n－형 반도체 기판(1)의 제2 주면(1b) 측에 n－형 반도체 기판(1)보다도 높은 불순물 농도를 가지는 어큐뮬레이션층(11)을 형성한다. 어큐뮬레이션층(11)을 형성한 후에, n－형 반도체 기판(1)을 열처리한다.

METHOD OF PREPARING NANONET TRANSITION METAL DICHALCOGENIDE THIN FILM AND PHOTOTRANSISTOR INCLUDING NANONET TRANSITION METAL DICHALCOGENIDE THIN FILM THEREBY

Photoelectric conversion element, imaging device, optical sensor and method of manufacturing photoelectric conversion element

To provide an organic photoelectric conversion element, imaging device, and optical sensor having low dark currents, and a method of manufacturing a photoelectric conversion element. Provided is a photoelectric conversion element, including: a first electrode; an organic photoelectric conversion layer disposed in a layer upper than the first electrode, the organic photoelectric conversion layer including one or two or more organic semiconductor materials; a buffer layer disposed in a layer upper than the organic photoelectric conversion layer, the buffer layer including an amorphous inorganic material and having an energy level of 7.7 to 8.0 eV and a difference in a HOMO energy level from the organic photoelectric conversion layer of 2 eV or more; and a second electrode disposed in a layer upper than the buffer layer.

Light-receiving device and ranging device

This light-receiving device comprises: a light-receiving unit (100) that includes a plurality of light-receiving elements (10) disposed in a matrix arrangement; and a plurality of read lines that transmit the signals read from the plurality of light-receiving elements. In the light-receiving device, each of the plurality of read lines is connected to, from among the plurality of light-receiving elements, at least two light-receiving elements.

SEMICONDUCTOR OPTICAL DEVICE

According to one embodiment, a semiconductor optical device including a substrate, a filter layer arranged on the substrate, and a semiconductor light receiving element arranged on the filter layer, wherein the filter layer includes a periodic structure through which a light of a desired wavelength range in incident light is transmitted, and which is constituted of different refractive index materials.

Optical sensor and electronic device

Whether an optical delay on a space optical path is within a light emission cycle is accurately determined without narrowing a range of a measurable distance in the light emission cycle. A DFF 1 that divides an output pulse of a first DLL (121) by two to provide a first time offset and a DFF 2 that divides an output pulse of a second DLL (122) by two to provide a second time offset are included, and at least following mathematical formulas (1) and (2) are satisfied: O1=m·T½ (1) 0 Подробнее

CMOS image sensor and method of fabricating the same

A CMOS image sensor and method for fabricating the same, wherein the CMOS image sensor has minimized dark current at the boundary area between a photodiode and an isolation layer. The present invention includes a first-conductivity-type doping area formed in the device isolation area of the substrate, the first-conductivity-type doping area surrounding the isolation area and a dielectric layer formed between the isolation layer and the first-conductivity-type doping area, wherein the first-conductivity-type doping area and the dielectric layer are located between the isolation layer and a second-conductivity-type diffusion area.

Method of fabricating a semiconductor device

A method of fabricating a semiconductor device includes steps of forming at least one shallow-trench isolation region in a semiconductor substrate; forming a photoresist pattern for blocking a photodiode region; sequentially implanting dopant ions and boron ions into the at least one shallow-trench isolation region; and activating the implanted ions. Since germanium ions are implanted before implanting P-type ions in a channel-stop ion implantation process, the lattice structure of the surface of a shallow-trench isolation region is maintained, to thereby allow a deeper penetration of the implanted P-type ions (boron ions), and to prevent the P-type ions from being outwardly diffused according to an increased lattice scattering phenomenon generated upon a thermal process.

Solid state imaging device capable of supressing generation of dark current

A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.

LOW ENERGY NUCLEAR RADIATION DETECTOR OF THE SEMICONDUCTOR TYPE

Microwave-infrared detector with semiconductor superlattice region

A detector and/or mixer of electromagnetic energy in the microwave-infrared region of the electromagnetic spectrum comprised of a body of semiconductor material having a superlattice region consisting of, for example, InAs - GaSb wherein the thickness of alternating epitaxial planar layers is in the range of 30A to 80A. Incident radiation perpendicular to the planar regions results in an electric field being provided in the plane of the layers which causes a reduction in the superlattice bandwidth and accordingly an increase in the transverse effective mass of the carriers. This results in a decrease in the perpendicular conductivity through the superlattice region.

PHOTOTRANSISTOR

Method of making compound semiconductor photodetector

InGaAs photodiodes are produced on an epitaxial InP wafer having an InP substrate, epitaxially grown layers and an InGaAs light sensing layer. An insulating protection film of SixNy or SiOx with openings is selectively deposited on the epitaxial wafer. Compound semiconductor undercoats of a compound semiconductor with a narrower band gap than InP are grown on the InP window layers at the openings by utilizing the protection film as a mask. A p-type impurity from a solid source or a gas source is diffused through the undercoats and the epitaxial InP layer into the InGaAs sensing layer. Then, either p-electrodes are formed on the undercoats and the undercoats are etched by utilizing the p-electrodes as a mask, or the undercoats are shaped by selective etching in a form of p-electrodes and the p-electrodes are formed on the undercoats.

APS pixel with reset noise suppression and programmable binning capability

A circuit and method are described which suppresses reset noise in active pixel sensor arrays. A circuit having a number of N<-> wells formed in a P<-> silicon epitaxial layer or a number of P<-> wells formed in an N<-> silicon epitaxial layer is provided. A pixel is formed in each of the wells so that each of the wells is surrounded by silicon of the opposite polarity and an array of pixels is formed. Means are provided for selectively combining or binning adjacent N<-> or P<-> wells. During the reset period of the imaging cycle selected groups of adjacent pixels are binned and the charge injected by the resetting of a pixel is averaged among the neighboring pixels, thereby reducing the effect of this charge injection on any one of the pixels and thus reducing the noise generated. The reset is accomplished using a PMOS transistor formed in each N<-> well or an NMOS transistor formed in each P<-> well. The selective binning is accomplished using NMOS or PMOS transistors formed in the region ...

Radiant energy to electric energy converter

Radiant energy is converted into electric energy by irradiating a capacitor including an ionic dielectric. The dielectric is a sintered crystal superionic conductor, e.g., lanthanum trifluoride, lanthanum trichloride, or silver bromide, so that a multiplicity of crystallites exist between electrodes of the capacitor. The radiant energy cyclically irradiates the dielectric so that the dielectric exhibits a cyclic photocapacitive like effect. Adjacent crystallites have abutting surfaces that enable the crystallites to effectively form a multiplicity of series capacitor elements between the electrodes. Each of the capacitor elements has a dipole layer only on or near its surface. The capacitor is initially charged to a voltage just below the dielectric breakdown voltage by connecting it across a DC source causing a current to flow through a charging resistor to the dielectric. The device can be utilized as a radiant energy detector or as a solar energy cell.

Radiation sensor, waver, sensor module, and method for the production a radiation sensor

A radiation sensor ( 10 ) comprises a support ( 1 ), a cavity ( 2 ) which may be a recess or a through hole formed in one surface of the support ( 1 ), a sensor element ( 4, 4 a, 4 b) formed above the cavity ( 2 ), preferably on a membrane ( 3 ) covering the cavity ( 2 ), and electric terminals ( 5, 5 a, 5 b) for the sensor element ( 4, 4 a, 4 b). The cavity ( 2 ) in the surface of the support ( 1 ) has a fully or partly rounded contour ( 2 a).

TRANSDUCER TO CONVERT OPTICAL ENERGY TO ELECTRICAL ENERGY

An optical transducer, optoelectronic device, and semiconductor are disclosed. An illustrative optical transducer is disclosed to include a plurality of p-n stacks, where each p-n stack comprises at least a p-layer and an n-layer, and formed therein a built-in photovoltage between the p-layer and the n-layer. The p-layers and n-layers are disclosed to have substantially the same n-type material in substantially the same composition such that each p-n stack in the plurality of p-n stacks has a substantially similar built-in photovoltage. The optical transducer is further disclosed to include a plurality of connecting layers, each connecting layer in the plurality of connecting layers being sandwiched between two adjacent p-n stacks for electrically connecting the two adjacent p-n stacks. The p-n stacks in the plurality of p-n stacks may be arranged such that the built-in photovoltage of each p-n stack additively contributes to an overall electric potential of the transducer.

SEMICONDUCTOR DEVICE

A semiconductor device including a first element including a photodiode and an amplifier circuit which amplifies output current of the photodiode, over a first insulating film; and a second element including a color filter and an overcoat layer over the color filter over a second insulating film is manufactured. The first element and the second element are attached to each other by bonding the first insulating film and the second insulating film with a bonding material. Further, the amplifier circuit is a current mirror circuit including a thin film transistor. Still further, a color film may be used instead of a color filter.

METHOD FOR MANUFACTURING MSM PHOTODETECTOR USING A HEMT STRUCTURE INCORPORATING A LOW-TEMPERATURE GROWN SEMICONDUCTOR

The present invention relates to the method for manufacturing an MSM photodetector using a HEMT structure incorporating a low-temperature grown semiconductor. The object of the present invention is to improve the speed characteristic of an MSM photodetector by using a HEMT structure incorporating a low-temperature grown semiconductor. The use of a HEMT structure incorporating a low-temperature grown semiconductor can reduce the number of holes reaching the metal electrode of MSM detectors, resulting in reduced hole current. As a result, the photocurrent response of the MSM detector using a HEMT structure incorporating a low-temperature grown semiconductor is dominated by electron current, resulting in a significant improvement in speed performance.

LAYERED STRUCTURE WITH LASER-INDUCED AGGREGATION SILICON NANO-DOTS IN A SILICON-RICH DIELECTRIC LAYER, AND APPLICATIONS OF THE SAME

The present invention relates to a layered structure with laser-induced aggregation silicon nano-dots in a silicon-rich dielectric layer, where the laser-induced aggregation silicon nano-dots are formed by a laser-induced aggregation process applied to the silicon-rich dielectric layer, and applications of the same. In one embodiment, the silicon-rich dielectric layer is one of a silicon-rich oxide film having a refractive index in the range of about 1.4 to 2.3, and a silicon-rich nitride film having a refractive index in the range of about 1.7 to 2.3. The layered structure with laser-induced aggregation silicon nano-dots in a silicon-rich dielectric layer is usable in a solar cell, a photosensitive element, a touch panel, a non-volatile memory device as storage node, and a display panel, respectively.

SOLID-STATE IMAGING DEVICE WITH UNEVEN STRUCTURES AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS

The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Image capturing and display apparatus and wearable device

An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.

PHOTODETECTOR COMPRISING A MONOLITHICALLY INTEGRATED TRANSIMPEDANCE AMPLIFIER AND EVALUATION ELECTRONICS, AND PRODUCTION METHOD

ПОЛУПРОВОДНИКОВОЕ УСТРОЙСТВО ТАНДЕМНОГО ТИПА

Изобретение относится к оптоэлектронике и направлено на повышение качества преобразования энергии. Многопереходное полупроводниковое устройство, содержащее слой типа p, слой типа n из аморфного полупроводника или из аморфного полупроводника, включающего микрокристаллы и слой, блокирующий диффузию, расположенный между слоем типа p и слоем типа n толщиной от 5 до предпочтительно от 10 до Полупроводниковое устройство может уменьшать ухудшение качества, вызываемое диффузией атомов легирующего материала, присутствующего соответственно в слое типа p слое типа n в другой слой. 1 ил. 3 табл.

РАДИОФОТОННОЕ ФОТОЭЛЕКТРИЧЕСКОЕ УСТРОЙСТВО

Радиофотонное фотоэлектрическое устройство включает оптоволокно и фотодетектор лазерного излучения, выполненный на основе полупроводниковой гетероструктуры с узкозонным фотоактивным слоем, заключенным между фронтальным и тыльным широкозонными слоями, выполненными с противоположными р- и n-типами проводимости, гетероструктура выполнена в виде усеченного конуса, в котором фронтальная поверхность гетероструктуры образует меньшее основание усеченного конуса, на тыльной поверхности гетероструктуры нанесен слой диэлектрика с показателем преломления n<1.5, выполненный в виде круга с диаметром меньше диаметра большего тыльного основания усеченного конуса, при этом тыльный контакт фотодетектора выполнен в форме диска с диаметром, равным диаметру большего основания усеченного конуса, причем на фронтальной поверхности диска выполнен кольцеобразный выступ с наружным диаметром, равным диаметру упомянутого диска, с внутренним диаметром, равным диаметру круга диэлектрического слоя, и с высотой выступа ...

ПЛАНАРНЫЙ ПОЛУПРОВОДНИКОВЫЙ ДЕТЕКТОР ИОНИЗИРУЮЩЕГО ИЗЛУЧЕНИЯ

Планарный полупроводниковый позиционно-чувствительный детектор ионизирующего излучения содержит последовательно расположенные подложку (1) n-типа проводимости, активный слой (2) n-типа проводимости и полосковые сигнальные электроды (3) р-типа проводимости, выполненные из кремния. Полосковые сигнальные электроды (3) покрыты слоем (4) металла, отделены друг от друга слоями (5) пассивирующего диэлектрика и снабжены на первых концах контактными площадками (6). На вторых концах полосковых сигнальных электродов (3) перпендикулярно им сформирована полоска (7) из диэлектрического материала, покрытая слоем (8) металла. Конструкция детектора обеспечивает в процессе эксплуатации проверку неразрывности металлизации полосковых сигнальных электродов, проверку исправности монтажных соединений сигнальных полосковых электродов с измерительной аппаратурой и калибровку всех измерительных трактов. 2 з.п. ф-лы, 2 ил.

Фоточувствительная поверхностно-барьерная структура

Полезная модель содержит кремниевую подложку, снабженную туннельно-тонким диэлектриком, выполненным из оксида кремния, и прозрачный для излучения проводящий электрод. Между туннельно-тонким диэлектриком и проводящим электродом содержится диэлектрический слой германо-силикатного стекла. Технический результат полезной модели заключается в получении фототока в широком спектральном диапазоне.

Способ группового изготовления утоньшенной гибридизированной сборки для матричного фотоприемника

Изобретение относится к технологии изготовления утоньшенных гибридизированных сборок (УГС) с минимальным повреждением поверхности и краев и может использоваться для создания матричных фотоприемников (МФП) различного назначения. Для изготовления УГС на лицевой стороне пластины МФЧЭ протравливают канавки определенной глубины, после чего пластину М×K МФЧЭ гибридизируют с отдельными БИС считывания и утоньшают базовую область МФЧЭ до уровня канавок. При этом разделение пластины МФЧЭ на отдельные кристаллы МФЧЭ и соответственно на отдельные УГС (в количестве М×K), происходит посредством утоньшения до уровня канавок. Изобретение решает задачу группового изготовления утоньшенных гибридизированных сборок с увеличенным выходом годных изделий за счет гибридизации отдельных больших интегральных схем считывания с пластиной матричных фоточувствительных элементов. 4 ил.

Verfahren zur Herstellung eines CMOS-Bildsensors

Verfahren zur Herstellung eines CMOS-Bildsensors, das Folgendes umfasst: Ausbilden einer Gatter-Elektrode auf einer Transistor-Region eines Halbleitersubstrats eines ersten Leitfähigkeitstyps, das eine Fotodioden-Region und die Transistor-Region enthält; jeweiliges Ausbilden von gering dotierten Diffusionsbereichen eines zweiten Leitfähigkeitstyps auf beiden Seiten der Gatter-Elektrode in der Fotodioden-Region und der Transistor-Region; Ausbilden einer Abschirmungsschicht über einer gesamten Oberfläche des Halbleitersubstrats, einschließlich der Gatter-Elektrode; Ausbilden einer Photoresist-Struktur zum Bedecken der Fotodioden-Region und der Gatter-Elektrode; Ausbilden eines stark dotierten Diffusionsbereichs eines zweiten Leitfähigkeitstyps durch Implantieren von Störionen eines zweiten Leitfähigkeitstyps mit hoher Dichte durch die Abschirmungsschicht hindurch in die gesamte Oberfläche des Halbleitersubstrats unter Verwendung der Photoresist-Struktur als Maske; und Entfernen der Photoresist-Struktur ...

An X=ray detector having intermetallic semiconductor element - for conversion of X-radiation into an electric signal and being highly efficient, position sensitive and suitable for computer tomography

An X-ray detection element consisting of at least one photoconducting, laminar formed, intermetallic, semiconductor element (HL1,HL2). The semiconductor element is bonding on its main (i.e. top and bottom) surface by plate type electrode (E1,E2). Radiation enters through the forward side of the element. The semiconductor material includes a copper-pyrite compound and an energy band of at least 1eV. The semiconductor elements can be combined in electrically connected stacks of several single elements. USE/ADVANTAGE - The detector elements are for conversion of X-radiation into corresponding electrical signals. They are particularly useful in computer tomography. The conversion of X-radiation to electric signal is highly efficient, position sensitivity is possible and the detector elements are easy to manufacture.

Optoelektronische Mikroelektronikanordnung

Optoelektronische Mikroelektronikanordnung, umfassend: - ein Halbleitersubstrat (20); - eine im Halbleitersubstrat (20) gebildete dotierte Wanne (21); - eine aus dem Halbleitersubstrat (20) hervorstehende Mesa (26), die einen den gleichen Leitungstyp wie die Wanne (21) umfassenden Teil (26) aufweist; - eine integrierte Photodiode mit einem optoelektronisch aktiven Teil, der durch Sperrschichten bildende Dotierungsgebiete (24, 25, 26, 27; 44, 45, 26) gebildet ist, die teils in der Mesa (26) und teils innerhalb der im Halbleitersubstrat (20) gebildeten Wanne (21) angeordnet sind; - einen Lichtwellenleiter (28, 47), der auf der im Halbleitersubstrat gebildeten Wanne (21) angeordnet ist und die Mesa (26) umgibt, so daß Licht sowohl über eine Seitenwand der Mesa (26) als auch über eine Oberfläche der Wanne (21) in den optoelektronisch aktiven Diodenteil einkoppelt.

Phototransistor

Strahlungsverstaerker mit fotoleitendem und elektrolumineszierendem Material

Optoelektronischer Wandler und dessen Herstellungsverfahren

A light sensor

A SEMICONDUCTOR LIGHT RECEIVING DEVICE

Photosensor and ambient light sensor

A method of operating a photosensor comprising: applying a bias voltage to a photosensor 12 comprising n (n > 1) photo-sensitive elements 8 connected in series, and determining the photocurrent in the photosensor 12 at a time when the applied bias voltage across the photosensor maintains the photosensor at or close to the point at which it has the greatest signal-to-noise ratio. This may conveniently be done by determining the current in the photosensor at a time when the applied bias voltage across the photosensor is equal or approximately equal to n x Vbi where Vbi is the bias voltage about which the current in a single one of the photo-sensitive elements 8, in the dark, changes sign. If the photo-sensitive elements 8 are photodiodes, the bias voltage Vbi is the "built-in" voltage of the photodiodes. The photocurrent generated when n series-connected photodiodes are illuminated is approximately equal to the photocurrent generated when one photodiode is illuminated. However, the leakage ...

Improvements in or relating to semiconductor devices

... 851,075. Semi-conductor devices. TELEFUNKEN G.m.b.H. Dec. 18, 1956 [Dec. 24, 1955], No. 38539/56. Class 37 In a semi-conductor device comprising a body of semi-conductor material with a minority carrier emitter and opposite to it a collector, a significant impurity gradient other than zero is provided throughout the entire body in a plane perpendicular to the average direction of the minority carrier paths to render these paths parallel. In the alloy junction transistor shown in Fig. 1, the amount of excess donor impurity decreases continuously as shown from the centre of the body to the circular base connection 8. The effect of the impurity gradient is to provide a focussing electric field which renders the transit times of minority carriers between the emitter and collector more uniform. The semi-conductor base body of a point contact diode may be differentially doped in the same manner. Suitably doped bodies may be formed by diffusion of impurities from the surface. Specification 721,671 ...

A high speed, wide optical bandwidth, and high efficiency resonant cavity enhanced photo-detector

A single optical receiver having a photo-detector with a wide optical bandwidth and high efficiency within the wide optical bandwidth, the photo-detector comprising: a first diode region of first doping type for receiving light; a second diode region of second doping type and of second thickness; an active region for converting the received light to an electronic signal, the active region having a third thickness and configured to reside between the first diode region and the second diode region; and a reflector coupled to the second diode region and having a silicon layer with a fourth thickness, the silicon layer residing between silicon oxide layers of fifth thicknesses, wherein the active region is configured to absorb the light of wavelengths of less than 900 nm, and wherein the reflector is configured to reflect the light of wavelengths from a range of 1260 nm to 1380 nm.

Two-step deposition process

Improvements in or relating to phototransistors

... 1,109,451. Semi-conductor devices. SIEMENS A.G. 11 Aug., 1965 [12 Aug., 1964], No. 34318/65. Heading H1K. A photo-transistor is arranged so that the radiation passes through part of the collector region and is incident on the collector junction. As shown, Fig. 2, a photo-transistor is produced by masking part of one face of a silicon or germanium wafer 11 with silicon dioxide and diffusing impurities into the exposed parts of the wafer to form base region 12 and collector region 13. Part of the oxide mask is removed to accommodate emitter electrode 14, the remaining part 16 of the mask forming a protective covering for the edges of the junctions. The collector electrode comprises a vapour deposited metal spot 15 or a vapour deposited metal network covering the collector region. In another embodiment, Fig. 1 (not shown), base and collector regions (2) and (3) respectively, are diffused into a surface of an N-type wafer (1) and are etched to form a mesa. The wafer is mounted on the gold-plated ...

OPTICIAN VERSION DEVICE

RADIATION SENSOR, WAFER, SENSOR MODULE AND PROCEDURE FOR THE PRODUCTION OF A RADIATION SENSOR

RADIATION-SENSITIVE SEMICONDUCTOR DETECTOR WITH UPPER FLAT BARRIER LAYER

SWITCHING CONFIGURATION WITH AT LEAST A RADIATION-FED CIRCUIT ELEMENT AND SEMICONDUCTOR ARRANGEMENT FOR APPLICATION IN A SUCH SWITCHING CONFIGURATION

PHOTODIODE ARRAY, PRODUCTION METHOD THEREFOR, AND RADIATION DETECTOR

THIN FILM PHOTOTRANSISTOR, ACTIVE MATRIX SUBSTRATE USING THE PHOTOTRANSISTOR, AND IMAGE SCANNING DEVICE USING THE SUBSTRATE

LIGHT RECEIVING ELEMENT AND LIGHT RECEIVING DEVICE INCORPORATING CIRCUIT AND OPTICAL DISC DRIVE

CIRCUIT ARRANGEMENT

RADIATION-ENERGIZED TRANSISTOR CIRCUIT

HEAT-RESISTANT THIN FILM PHOTOELECTRIC CONVERTER WITH DIFFUSION BLOCKING LAYER

Absturct of the Disclosure A heat-resistant thin film photoelectric converter comprising a semiconductor, an electrode and a diffusion-blocking layer, the diffusion-blocking layer being provided between the semiconductor and at least one electrode, and its preparation. The converter can avoid the fall-down of the quality owing to the diffusion of metal or metallic compound from the electrode into the semiconductor.

PHOTODIODE AND METHOD FOR MAKING THE SAME

VEHICLE COMPOSITE PANE WITH AN INTEGRATED LIGHT SENSOR

The invention relates to a vehicle composite screen having an integrated light sensor, at least comprising an outer pane (1) and an inner pane (2) which are interconnected by a thermoplastic intermediate layer (3), wherein at least one photodiode (4) located on a circuit board (5) is arranged between the outer pane (1) and the inner pane (2), the photodiode (4) being an SMD component.

VEHICLE COMPOSITE PANE WITH AN INTEGRATED LIGHT SENSOR

The present invention relates to a vehicle composite pane with an integrated light sensor, at least comprising an outer pane (1), and an inner pane (2) that are bonded to one another via a thermoplastic intermediate layer (3), wherein a plurality of photodiodes (4) situated on a circuit board (5) are arranged between the outer pane (1) and the inner pane (2), wherein the photodiodes (4) are an SMD components and wherein the photodiodes (4) are arranged on the circuit board (5) as groups of parallel connected photodiodes (4), wherein all groups are connected to a common electrical input (9) and each group is connected to a separate electrical output (10.1, 10.2).

METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-RECEIVING ELEMENTS

A method for manufacturing semiconductor light-receiving elements comprising forming an epitaxial layer including a light-receiving layer composed of at least In, Ga, and As on an n-InP substrate by supplying at least In gas, Ga gas, and As gas to a surface of the n-InP substrate from one side of a container accommodating the n-InP substrate. A p-type layer is formed in the configuration of a floating island by thermally diffusing a p-type impurity into the light-receiving layer. Finally, the n-InP substrate on which the p-type layer has been formed is separated into semiconductor lightreceiving elements.

SEMICONDUCTOR DARK IMAGE POSITION SENSITIVE DEVICE

A semiconductor dark image position sensing device comprises a photoelectric layer generating a photoelectric current in a portion where light is input in response to intensity of the light input, a resistive element layer into which the photoelectric current generated in the photoelectric layer flows from a portion corresponding to the position of light input, a second resistive element disposed in association with the photoelectric layer for replenishing an insufficient amount of electric current with respect to the photoelectric current so as to flow the same into the resistive element layer in such that a distribution of electric current flowing into the resistive element layer corresponding to the position of light input becomes substantially uniform over a whole sensing region, and signal electric current output terminals disposed at the opposite ends of the second resistive element.

Optical semiconductor device and manufacturing method therefor

An optical semiconductor device is provided with a low concentration p-type silicon substrate (1); a low dopant concentration n-type epitaxial layer (second epitaxial layer) (26); a low dopant concentration p-type anode layer (27); a high concentration n-type cathode contact layer (9); a photodiode (2) made of the anode layer (27) and the cathode contact layer (9); and an NPN transistor (3) formed on the n-type epitaxial layer (26). The anode can be substantially completely depleted in the case where the anode layer (27) has its dopant concentration peak in the vicinity of the interface between the silicon substrate (1) and the n-type epitaxial layer (26). Therefore, high speed and high light receiving sensitivity characteristics can be obtained, and further, any influence of auto-doping from peripheral embedding layers can be controlled, so that a depletion layer can be stably formed in the anode. Thus, a photodiode characterized in its high speed and high light receiving sensitivity for ...

Optical sensor, light detection method and display device

Прозрачный гетеропереход на основе оксидов

Полезная модель представляет собой структуру и выбор материалов для изготовления прозрачного гетероперехода, в котором оба слоя n- и р-типа проводимости изготавливаются методом золь-гель технологии.Прозрачный гетеропереход на основе оксидов, содержащий подложку с последовательно нанесенными пленкой алюмината меди в качестве р-слоя и поликристаллической пленкой оксида цинка легированного алюминием в качестве n-слоя, а также с серебряными электродами, нанесенными на эти слои, отличающийся тем, что подложка выполнена из плавленого кварца, пленка оксида цинка выполнена толщиной от 82 до 87 нм, легирована алюминием с молярным соотношением Zn:Al, 1:0,03, размер ее зерен равен 9-12 нм, пленка алюмината меди выполнена толщиной от 75 до 85 нм, легирована хромом с молярным соотношением Cu:Al:Cr, 1:0,5:0,5, представляет собой поликристаллический слой с размером зерен 50-57 нм, поликристаллические зерна оксида цинка легированного алюминием ориентированы осями [101] и [100] относительно направлений [101] и [006] поликристаллов алюмината меди легированного хромом с рассогласованием менее 1%.Предложенные структура и состав устройства обеспечивают улучшение планарности границы гетероперехода, тем самым увеличивая значение оптического пропускания гетероструктуры в видимом и ближнем ИК-диапазонах. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 196 426 U1 (51) МПК H01L 31/109 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК H01L 31/109 (2020.01) (21)(22) Заявка: 2019144309, 27.12.2019 (24) Дата начала отсчета срока действия патента: Дата регистрации: 28.02.2020 (45) Опубликовано: 28.02.2020 Бюл. № 7 Адрес для переписки: 197101, Санкт-Петербург, Кронверкский пр., 49, Университет ИТМО, ОИС и НТИ 1 9 6 4 2 6 U 1 (56) Список документов, цитированных в отчете о поиске: RU 2667689 C2, 24.09.2018. RU 2394305 C2, 10.07.2010. RU 2703519 C1, 18.10.2019. RU 2416135 C2, 10.04.2011. RU 2593915 C2, 10.08.2016. RU 2701467 C1, 26.09.2019. RU ...

Black silicon based metal-semiconductor-metal photodetector

A black silicon based metal-semiconductor-metal photodetector includes a silicon substrate and a black silicon layer formed on the silicon substrate. An interdigitated electrode pattern structure is formed on the black silicon layer, which can be a planar or U-shaped structure. A thin potential barrier layer is deposited at the interdigitated electrode pattern structure. An Al or transparent conductive ITO thin film is deposited on the thin potential barrier layer. A passivation layer is provided on the black silicon layer. In the black silicon based metal-semiconductor-metal photodetector, the black silicon layer, as a light-sensitive area, can respond to ultraviolet, visible and near infrared light.

Photodetector structure and method of manufacturing the same

A method of manufacturing a photodetector structure is provided. The method includes forming a structural layer by making a trench in a bulk silicon substrate and filling the trench with a cladding material, forming a single-crystallized silicon layer on the structural layer, and forming a germanium layer on the single-crystallized silicon layer.

Semiconductor device, method for manufacturing same, and display device

The present invention provides a semiconductor device capable of suppressing a contact failure due to an increase in contact resistance, a production method of the semiconductor device, and a display device. The present invention provides a semiconductor device which includes a thin-film diode including a crystalline semiconductor layer which includes a cathode region and an anode region, a cathode electrode connected to the cathode region, and an anode electrode connected to the anode region, the thin-film diode, the cathode electrode, and the anode electrode being disposed on a substrate, and which is featured in that the crystalline semiconductor layer includes a first low-impurity-concentration region having an impurity concentration lower than the impurity concentration of the cathode region, in that the first low-impurity-concentration region is arranged adjacent to the cathode region, and in that the cathode electrode is in contact with an area of the cathode region, the area being within 3 μm from the boundary at which the cathode region is in contact with the first low-impurity-concentration region.

Composition for producing a filter material for radiation, method for producing a composition for a filter material, material for filtering radiation, and an optoelectronic device comprising the material

Composition for producing a filter material for radiation includes a silicone and at least one dye dispersed in the silicone, wherein the composition has a relative transmission of less than 20% for radiation of the wavelength of 400 nm to 700 nm, and has a relative transmission of greater than 50% for radiation of the wavelength of 850 nm to 1025 nm.

Multilayer transparent light-receiving device and electronic device

A multilayer transparent light-receiving device with significantly high photoresponsive speed that is easily manufactured, and a high-performance electronic device using the multilayer transparent light-receiving device are provided. The multilayer transparent light-receiving device is composed by laminating a plurality of protein transparent light-receiving elements using an electron transfer protein. The protein transparent light-receiving element has a structure in which a transparent substrate, a transparent electrode, an electron transfer protein layer, an electrolyte layer, and a transparent counter electrode are sequentially laminated. The multilayer transparent light-receiving device is used as a light-receiving device for a camera, an optical disc system and the like.

Photosensor, semiconductor device, and liquid crystal panel

The light use efficiency of a thin film diode is improved even when the semiconductor layer of the diode has a small thickness, thereby improving the light detection sensitivity of the diode. Further, a short circuit between the electrodes of the thin film diode via the light-blocking layer is prevented. A thin film diode ( 130 ) having a first semiconductor layer ( 131 ) including, at least, an n-type region ( 131 n ) and a p-type region ( 131 p ) is provided on one side of a substrate ( 101 ), and a light-blocking layer ( 160 ) is provided between the substrate and the first semiconductor layer. A metal oxide layer ( 180 ) is provided on the side of the light-blocking layer facing the first semiconductor layer. Asperities are provided on the side of the metal oxide layer facing the first semiconductor layer, and the first semiconductor layer has a geometry of asperities conforming with the asperities on the metal oxide layer.

Photosensor and Method of Manufacturing the Same

In a photosensor and a method of manufacturing the same, the photosensor comprises: an intrinsic silicon layer formed on a substrate; a P-type doped region formed in a same plane with the intrinsic silicon layer; and an oxide semiconductor layer formed on or under the intrinsic silicon layer, and overlapping an entire region of the intrinsic silicon layer.

Correction wedge for leaky solar array

A leaky travelling wave array of optical elements provide a solar wavelength rectenna.

Orthogonal scattering features for solar array

A leaky travelling wave array of optical elements provide a solar wavelength rectenna.

Photodetector capable of detecting the visible light spectrum

Apparatuses capable of and techniques for detecting the visible light spectrum are provided.

Optical sensor and electronic apparatus

An optical sensor includes an impurity region for a photodiode and an angle limiting filter limiting the incidence angle of incidence light incident to a light receiving area of the photodiode, which are formed on a semiconductor substrate. The angle limiting filter is formed by at least a first plug corresponding to a first insulating layer and a second plug corresponding to a second insulating layer located in an upper layer of the first insulating layer. Between the first plug and the second plug, there is a gap area having a gap space that is equal to or less than λ/2.

Photodiode and manufacturing method for same, substrate for display panel, and display device

A third semiconductor layer 14 is formed on a light receiving surface 13 a of a second semiconductor layer 13 so as to cover the light receiving surface 13 a of the second semiconductor layer 13 at least partially in a plan view. A first semiconductor layer 10 is formed on an opposite surface of the light receiving surface 13 a of the second semiconductor layer 13 so as to overlap the light receiving surface 13 a and the third semiconductor layer 14 at least partially in a plan view. In the second semiconductor layer 13 , the relative light receiving sensitivity to respective wavelengths of light has the highest value at a wavelength in an infrared region. Thus, even if the intensity of light of the infrared region that is emitted to an object of detection is not increased when sensing by a photodiode is performed using light of the infrared range, it is possible to achieve a photodiode that has a high S/N ratio, which is a ratio of data of received light with respect to noise, and that has high detection accuracy.

Gain-clamped semiconductor optical amplifiers

A gain-clamped semiconductor optical amplifier comprises: at least one first surface; at least one second surface, each second surface facing and electrically isolated from a respective first surface; a plurality of nanowires connecting each opposing pair of the first and second surfaces in a bridging configuration; and a signal waveguide overlapping the nanowires such that an optical signal traveling along the signal waveguide is amplified by energy provided by electrical excitation of the nanowires.

Photo detector array of geiger mode avalanche photodiodes for computed tomography systems

The photo detector array is configured to generate pulses with short rise and fall times because each Geiger mode avalanche photodiode includes an anode contact, a cathode contact, an output contact electrically insulated from the anode and cathode contacts, a semiconductor layer, and at least one shield or metal structure in the semiconductor layer capacitively coupled to the semiconductor layer and coupled to the output contact. The output contacts of all Geiger mode avalanche photodiodes are connected in common and are configured to provide for detection of spikes correlated to avalanche events on any avalanche photodiode of the array.

Radiation Detector, Method of Manufacturing a Radiation Detector, and Lithographic Apparatus Comprising a Radiation Detector

In one an embodiment, there is provided an assembly comprising at least one detector. Each of the at least one detector includes a substrate having a doped region of a first conduction type, a layer of dopant material of a second conduction type located on the substrate, a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material, a first electrode connected to the layer of dopant material, and a second electrode connected to the substrate. The diffusion layer is arranged to form a radiation sensitive surface.

Semiconductor light-receiving device

A semiconductor light-receiving includes: a substrate; a semiconductor light-receiving element that is provided on the substrate and has a first conductivity region and a second conductivity region; a first electrode electrically coupled to the first conductivity region; a second electrode electrically coupled to the second conductivity region; an insulating layer located on the second conductivity region; and a wiring that is located on the insulating layer and is electrically coupled to the first electrode, the wiring being elongated from the first electrode to a peripheral region of the semiconductor light-receiving element, the wiring having a region of first width and a region of second width narrower than the first width, the region of second width of the wiring being located on the second conductivity region.

Flexible lateral pin diodes and three-dimensional arrays and imaging devices made therefrom

Flexible lateral p-i-n (“PIN”) diodes, arrays of flexible PIN diodes and imaging devices incorporating arrays of PIN diodes are provided. The flexible lateral PIN diodes are fabricated from thin, flexible layers of single-crystalline semiconductor. A plurality of the PIN diodes can be patterned into a single semiconductor layer to provide a flexible photodetector array that can be formed into a three-dimensional imaging device.

Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom

Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.

Light-receiving device, light receiver using same, and method of fabricating light-receiving device

An apparatus includes a flip-chip semiconductor substrate, a light detection element configured to be formed over the flip-chip semiconductor substrate and to have a laminate structure including a first semiconductor layer of a first-conductive-type, a light-absorption layer formed over the first semiconductor layer, and a second semiconductor layer of a second-conductive-type formed over the light-absorption layer, an inductor configured to be connected to the light detection element over the flip-chip semiconductor substrate, an output electrode for bump connection configured to output a current generated by the light detection element through the inductor, a bias electrode for bump connection configured to apply a bias voltage to the light detection element through a bias electrode, and a line configured to cause a metal line of the inductor and the light detection element to be connected to the output electrode or the bias electrode.

Avalanche Photodiode with Special Lateral Doping Concentration

Avalanche photodiodes having special lateral doping concentration that reduces dark current without causing any loss of optical signals and method for the fabrication thereof are described. In one aspect, an avalanche photodiode comprises: a substrate, a first contact layer coupled to at least one metal contract of a first electrical polarity, an absorption layer, a doped electric control layer having a central region and a circumferential region surrounding the central region, a multiplication layer having a partially doped central region, and a second contract layer coupled to at least one metal contract of a second electrical polarity. Doping concentration in the central section is lower than that of the circumferential region. The absorption layer can be formed by selective epitaxial growth.

Method of manufacturing photodiode with waveguide structure and photodiode

A process to form a photodiode (PD) with the waveguide structure is disclosed. The PD processes thereby reduces a scattering of the parasitic resistance thereof. The process includes steps to form a PD mesa stripe, to bury the PD mesa stripe by the waveguide region, to etch the PD mesa stripe and the waveguide region to form the waveguide mesa stripe. In the etching, the lower contact layer plays a role of the etching stopper.

Photovoltaic uv detector

A photovoltaic UV detector configured to generate an electrical output under UV irradiation. The photovoltaic UV detector comprises a first layer comprising an electrically polarized dielectric thin layer configured to generate a first electrical output under the UV irradiation; and a second, layer configured to form an electrical energy barrier at an interface between the second layer and the first layer so as to generate a second electrical output under the UV irradiation, the second electrical output having a same polarity as the first electrical output, the electrical output of the photovoltaic UV detector being a sum of at least the first electrical output and the second electrical output. The electrically polarized dielectric thin layer may be a ferroelectric thin film, which may comprise PZT or PZLT. The second layer may be a metal and the electrical energy barrier may be a Schottky barrier.

Strain-controlled atomic layer epitaxy, quantum wells and superlattices prepared thereby and uses thereof

Processes for forming quantum well structures which are characterized by controllable nitride content are provided, as well as superlattice structures, optical devices and optical communication systems based thereon.

Highly-Depleted Laser Doped Semiconductor Volume

A device with increased photo-sensitivity using laser treated semiconductor as detection material is disclosed. In some embodiments, the laser treated semiconductor may be placed between and an n-type and a p-type contact or two Schottky metals. The field within the p-n junction or the Schottky metal junction may aid in depleting the laser treated semiconductor section and may be capable of separating electron hole pairs. Multiple device configurations are presented, including lateral and vertical configurations. 1. A photodiode device , comprising:a substrate;a first doped section formed at a side of the substrate;a second doped section formed at an opposite side of the substrate from the first doped section; anda laser treated semiconductor section adjacent to and in electrical contact with the first doped section such that the first doped region and the second doped region are positioned to generate an electric field substantially capable of depleting at least a portion of the laser treated semiconductor section of free carriers and separating resulting electron-hole pairs generated in the laser treated semiconductor section.2. The device of claim 1 , further comprising:a first contact coupled to the first doped section; anda second contact coupled to the second doped section.3. The device of claim 1 , wherein the first doped section and the second doped section are substantially annular and the laser treated section is substantially disk shaped.4. The device of claim 1 , wherein the first doped section is n-doped and the second doped section is p-doped.5. The device of claim 4 , wherein the laser treated semiconductor section includes a net doped n-type material and the n-doped first doped section has a higher level of n-doping than the laser treated semiconductor section.6. The device of claim 1 , wherein the laser treated semiconductor section includes a microstructured surface.7. The device of claim 1 , wherein the first doped section is a plurality of first ...

Detector modules and methods of manufacturing

Detector modules and methods of manufacturing are provided. One detector module includes a detector having a silicon wafer structure formed from a first layer having a first resistivity and a second layer having a second resistivity, wherein the first resistivity is greater than the second resistivity. The detector further includes a photosensor device provided with the first layer on a first side of the silicon wafer and one or more readout electronics provided with the second layer on a second side of the silicon wafer, with the first side being a different side than the second side.

Nitride semiconductor wafer, nitride semiconductor device, and method for growing nitride semiconductor crystal

According to one embodiment, a nitride semiconductor wafer includes a silicon substrate, a lower strain relaxation layer provided on the silicon substrate, an intermediate layer provided on the lower strain relaxation layer, an upper strain relaxation layer provided on the intermediate layer, and a functional layer provided on the upper strain relaxation layer. The intermediate layer includes a first lower layer, a first doped layer provided on the first lower layer, and a first upper layer provided on the first doped layer. The first doped layer has a lattice constant larger than or equal to that of the first lower layer and contains an impurity of 1×10 18 cm −3 or more and less than 1×10 21 cm −3 . The first upper layer has a lattice constant larger than or equal to that of the first doped layer and larger than that of the first lower layer.

DEVICE HAVING AN AVALANCHE PHOTO DIODE AND A METHOD FOR SENSING PHOTONS

A semiconductor device that may include an avalanche photodiode (APD), the APD may include: a first doped region of a first polarity; a buried guard ring of a second polarity, the second polarity is opposite to the first polarity, the buried guard ring is spaced apart from the first doped region and is positioned below the first doped region; a well of the second polarity, wherein the well interfaces the first doped region to form a p-n junction; and a second doped region of the second polarity, the second doped region is spaced apart from the first doped region. 1. A semiconductor device , comprising an avalanche photodiode (APD) , the APD comprises:a first doped region of a first polarity;a buried guard ring of a second polarity, the second polarity is opposite to the first polarity, the buried guard ring is spaced apart from the first doped region and is positioned below the first doped region;a well of the second polarity, wherein the well interfaces the first doped region to form a p-n junction; anda second doped region of the second polarity, the second doped region is spaced apart from the first doped region.2. The device according to claim 1 , wherein the first polarity is positive and the second polarity is negative.3. The device according to claim 1 , wherein the first polarity is negative and the second polarity is positive.4. The device according to wherein the buried guard ring has a non-uniform doping profile.5. The device according to claim 4 , wherein the non-uniform doping profile is arranged to increase a uniformity of an electrical field formed across the p-n junction when the APD is biased with a bias voltage that facilitates a multiplication of a number of photo-carriers in the depletion region.6. The device according to claim 4 , wherein at least one portion of the doping profile changes as a function of a distance from edges of the positive doped region.7. The device according to claim 4 , wherein the non-uniform doping profile is set to ...

Photodetector, optical communication device equipped with the same, method for making of photodetector, and method for making of optical communication device

The present invention provides a photodetector which solves the problem of low sensitivity of a photodetector, an optical communication device equipped with the same, and a method for making the photodetector, and a method for making the optical communication device. The photodetector includes a substrate, a lower cladding layer arranged on the substrate, an optical waveguide arranged on the lower cladding layer, an intermediate layer arranged on the optical waveguide, a optical absorption layer arranged on the intermediate layer, a pair of electrodes arranged on the optical absorption layer, and wherein the optical absorption layer includes a IV-group or III-V-group single-crystal semiconductor, and the optical absorption layer absorbs an optical signal propagating through the optical waveguide.

PHOTOELECTRIC CONVERSION CELL AND ARRAY, READING METHOD THEREFOR, AND CIRCUIT THEREOF

In order to achieve a photovoltaic cell and an array of high sensitivity and high dynamic range, there is a need for a photovoltaic cell and an array which are combined so that an amplified photovoltaic element and a selection element are resistant to external noise, and so that the combination is resistant to effects from address selection pulse noise at array readout time. In the present invention, in order to solve the problem, a photovoltaic cell has been configured with a combination of an amplified photovoltaic element () and a selection element ( and the like) which are resistant to external noise, and various means of solution of the combination are provided which are resistant to the effects of address selection pulse noise at array readout time. As a result, a dynamic range of 6 to 7 orders of magnitude for light detection has become possible. 1. A photoelectric conversion cell comprising , at least ,a photoelectric conversion element having an amplification function, anda first transistor,wherein the photoelectric conversion element includes a first electrical signal output section and a second electrical signal output section,wherein the first transistor includes a first output section, a second output section, and a third control section that controls a current flowing between the first output section and the second output section or resistance between the first output section and the second output section,wherein the second electrical signal output section of the photoelectric conversion element has to the first electrical signal output section a potential difference polarity that permits conduction of an electrical signal current from or to the first electrical signal output section and another potential difference polarity that permits less conduction of the electrical signal current from or to the first electrical signal output section,wherein the current flowing between the first output section and the second output section or the resistance ...

PHOTODETECTOR FOR DETERMINING LIGHT WAVELENGTHS

There is described a photodetector comprising a semiconductor material having at least a region substantially depleted of free moving carriers, the photodetector comprising: a substrate of one of n-type and p-type; at least one charge collector along a surface of the substrate and having a doping-type opposite from the substrate; a substrate contact along the surface of the substrate spaced apart from the at least one charge collector to allow current to flow between the at least one charge collector and the substrate contact; and at least one non-conductive electrode positioned along the surface of the substrate in an alternating sequence with the at least one charge collector, and separated from the substrate by an insulator, and adapted to apply an electric potential to the substrate and cause charge carriers generated therein by application of a light source to advance towards the at least one charge collector due to the effects of an electric field, such that the at least one charge collector can measure carrier concentration within the substrate. 1. A photodetector comprising a semiconductor material having at least a region substantially depleted of free moving carriers , the photodetector comprising:a substrate of one of n-type and p-type;at least one charge collector along a surface of the substrate and having a doping-type opposite from the substrate;a substrate contact along the surface of the substrate spaced apart from the at least one charge collector to allow current to flow between the at least one charge collector and the substrate contact; andat least one non-conductive electrode positioned along the surface of the substrate in an alternating sequence with the at least one charge collector, and separated from the substrate by an insulator, and adapted to apply an electric potential to the substrate and cause charge carriers generated therein by application of a light source to advance towards the at least one charge collector due to the effects of ...

SUPERCONDUCTING NANOWIRE AVALANCHE PHOTODETECTORS (SNAPS) WITH FAST RESET TIME

A superconducting nanowire avalanche photodetector (SNAP) with improved high-speed performance. An inductive element may be coupled in series with at least two parallel-coupled nanowires. The nanowires may number 5 or fewer, and may be superconducting and responsive to even a single photon. The series inductor may ensure current diverted from a photon-absorbing nanowire propagates to other nanowires and become amplified. The series inductance may be less than 10 times the nominal inductance per nanowire, and may also be larger than a minimum inductance to avoid spurious outputs in response to a photon absorption. The series inductance may be configured to achieve a desired tradeoff between SNAP reset time and spurious outputs. For example, the series inductance may be configured achieve minimum reset time or maximum bias margin, subject to user-defined constraints. By appropriately configuring the series inductance, a systematic method of designing improved SNAPs may be provided. 1. A superconducting nanowire avalanche photodetector (SNAP) comprising:{'sub': '0;', 'at least two nanowires coupled in parallel, each of the at least two nanowires having a nominal inductance Land'}{'sub': 'S', 'an inductive element coupled in series with the at least two nanowires, the inductive element having inductance L,'}{'sub': S', '0, 'wherein Lis less than 10*L.'}2. The SNAP of claim 1 , wherein:the at least two nanowires comprise a number N of nanowires; and{'sub': S', '0, 'Lis equal to or greater than (7/3)*(L/N).'}3. The SNAP of claim 1 , wherein:the at least two nanowires comprise a number N of nanowires;{'sub': 'L', 'the SNAP further comprises a load resistance having value Rcoupled in parallel with the at least two nanowires;'}{'sub': 't', 'the at least two nanowires have a thermal relaxation time of value τ; and'}{'sub': S', 't', 'L', '0, 'Lis equal to or greater than (τ/3)*R−(L/N).'}4. The SNAP of claim 1 , wherein:the at least two nanowires comprise a number N of ...

Photoelectric conversion element and method for manufacturing same

A photoelectric conversion element includes a first semiconductor layer that exhibits a first conductivity type and is provided in a selective area over a substrate, a second semiconductor layer that exhibits a second conductivity type and is disposed opposed to the first semiconductor layer, and a third semiconductor layer that is provided between the first and second semiconductor layers and exhibits a substantially intrinsic conductivity type. The third semiconductor layer has at least one corner part that is not in contact with the first semiconductor layer.

Method of fabricating photodiode

A light-absorbing layer is composed of a compound-semiconductor film of chalcopyrite structure, a surface layer is disposed on the light-absorbing layer, the surface layer having a higher band gap energy than the compound-semiconductor film, an upper electrode layer is disposed on the surface layer, and a lower electrode layer is disposed on a backside of the light-absorbing layer in opposition to the upper electrode layer, the upper electrode layer and the lower electrode layer having a reverse bias voltage applied in between to detect electric charges produced by photoelectric conversion in the compound-semiconductor film, as electric charges due to photoelectric conversion are multiplied by impact ionization, while the multiplication by impact ionization of electric charges is induced by application of a high-intensity electric field to a semiconductor of chalcopyrite structure, allowing for an improved dark-current property, and an enhanced efficiency even in detection of low illumination intensities, with an enhanced S/N ratio.

Waveguide photomixer

Provided is a waveguide photomixer in which an absorption layer is selectively etched to reduce a junction area. The waveguide photomixer includes a buffer layer disposed on a substrate, a first clad layer disposed on the buffer layer and formed to have smaller width than that of a top surface of the buffer layer, an absorption layer disposed on the first clad layer and formed to have smaller width than that of a top surface of the first clad layer, a second clad layer disposed on the absorption layer and formed to have greater width than that of a top surface of the absorption layer, a contact layer disposed on the second clad layer, a first electrode unit disposed on the buffer layer where the first clad layer is not disposed, and a second electrode unit disposed on the contact layer.

Anti-reflection structures for cmos image sensors

Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.

MAGNETIC FIELD GENERATOR

A metallic ring is made of two metals, wherein one metal forms a major arcuate portion and the other a minor arcuate portion of the ring, thereby forming a thermocouple-type structure as a result of the two inter-metallic junctions. The metallic ring supports a surface plasmon whose energy is matched to the energy, i.e. wavelength, of an incident light beam so that the oscillating electromagnetic field of the light resonates with the plasmon. The resonating plasmon causes a temperature difference to arise between the two inter-metallic junctions in the ring. The different Seebeck coefficients of the two metals results in the temperature difference causing a net current to flow around the ring, which in turn generates a magnetic field. Such a thermoelectric metamaterial ring transforms high frequency optical energy into long duration magnetic radiation pulses in the terahertz range. Applications of these devices include high density magnetic recording, magnetic field spectroscopy, and efficient terahertz radiation sources. 1. A device for generating a magnetic field , comprising:a light source operable to generate pulses of light of a particular wavelength, the light having an oscillating electromagnetic field with a defined polarization; anda field generator arranged to receive the light and comprising a closed current path having first and second angular portions of first and second materials interconnected by first and second junctions;the closed current path comprising electrons or holes which absorb energy from each pulse of light and are thereby transiently heated; andthe polarization of the light being aligned relative to the closed current path so that each pulse of light causes different amounts of transient heating of the electrons or holes at the first and second junctions so that one of the junctions becomes hotter than the other, which causes a thermally induced transient current to flow around the closed current path, thereby generating a transient ...

SILICON PHOTOELECTRIC MULTIPLIER

A cell for a silicon-based photoelectric multiplier may comprise a first layer of a first conductivity type and a second layer of a second conductivity type formed on the first layer. The first layer and the second layer may form a first p-n junction. The cell may be processed by an ion implantation act wherein parameters of the ion implantation are selected such that due to an implantation-induced damage of the crystal lattice, an absorption length of infrared light of a wavelength in a range of − nm to nm is decreased. 1. A cell for a silicon based photoelectric multiplier , comprising:a first layer of a first conductivity type; anda second layer of a second conductivity type formed on the first layer, the first layer and the second layer forming a first p-n junction, the cell processed by an ion implantation act associated with one or more parameters that are selected such that, due to an implantation-induced damage of crystal lattice, an absorption length of infrared light of a wavelength in a range of ˜800 nm to 1000 nm is decreased.2. The cell of claim 1 , the ion implantation act comprising an ion dose in a range of 10to 10cmand an ion energy in a range of 1 MeV to 10 MeV.3. The cell of claim 1 , the ion implantation act followed by an annealing act.4. The cell of claim 3 , the annealing act carried out at a temperature in a range of 300° C. to 1000° C. for a time duration of at least 10 s.5. The cell of claim 1 , comprising:a substrate of the second conductivity type; anda doped buried layer of the first conductivity type, the substrate and the doped buried layer forming a second p-n junction.6. A cell for a silicon based photoelectric multiplier claim 1 , comprising:a first layer of a first conductivity type; and{'sup': 13', '15', '−2, 'a second layer of a second conductivity type formed on the first layer, the first layer and the second layer forming a first p-n junction, the cell processed by an ion implantation act comprising an ion dose in a range of ...

HIGHLY EFFICIENT CMOS TECHNOLOGY COMPATIBLE SILICON PHOTOELECTRIC MULTIPLIER

The present disclosure relates to photodetectors with high efficiency of light detection, and may be used in a wide field of applications, which employ the detection of very weak and fast optical signals, such as industrial and medical tomography, life science, nuclear, particle, and/or astroparticle physics etc. A highly efficient CMOS-technology compatible Silicon Photoelectric Multiplier may comprise a substrate and a buried layer applied within the substrate. The multiplier may comprise cells with silicon strip-like quenching resistors, made by CMOS-technology, located on top of the substrate and under an insulating layer for respective cells, and separating elements may be disposed between the cells. 1. A cell for a silicon-based photoelectric multiplier , comprising:a first layer of a first conductivity type;a second layer of a second conductivity type formed on the first layer, the first layer and the second layer forming a first p-n junction; anda quenching resistor layer of the second conductivity type formed on the first layer laterally beside the second layer, and connected to a lateral side face of the second layer.2. A silicon-based photoelectric multiplier claim 1 , comprising a plurality of cells according to .3. The silicon-based photoelectric multiplier of claim 1 , comprising:a voltage distribution layer of the second conductivity type formed on the first layer, the quenching resistor layer connected to the voltage distribution line.4. The silicon-based photoelectric multiplier of claim 2 , the second layer claim 2 , the quenching resistor layer claim 2 , and the voltage distribution layer formed as well areas in the first layer claim 2 , at least some of the well areas comprising respective upper surfaces coplanar with the upper surface of the first layer.5. The silicon-based photoelectric multiplier of claim 1 , the quenching resistor layer comprising a resistivity in the range of 10-50 kΩ/square.7. The silicon-based photoelectric multiplier of ...

SINGLE PHOTON AVALANCHE DIODE FOR CMOS CIRCUITS

A single photon avalanche diode for use in a CMOS integrated circuit includes a deep n-well region formed above a p-type substrate and an n-well region formed above and in contact with the deep n-well region. A cathode contact is connected to the n-well region via a heavily doped n-type implant. A lightly doped region forms a guard ring around the n-well and deep n-well regions. A p-well region is adjacent to the lightly doped region. An anode contact is connected to the p-well region via a heavily doped p-type implant. The junction between the bottom of the deep n-well region and the substrate forms a multiplication region when an appropriate bias voltage is applied between the anode and cathode and the guard ring breakdown voltage is controlled with appropriate control of the lateral doping concentration gradient such that the breakdown voltage is higher than that of the multiplication region. 1. A single photon avalanche diode , SPAD , for use in a CMOS integrated circuit , the SPAD comprising:a first region comprising a deep well of a first conductivity type, the first region being formed above a second region of a second conductivity type;a first contact connected to the first region via a conductive pathway of the first conductivity type; anda second contact connected to the second region via a conductive pathway of the second conductivity type;wherein the doping in the vicinity of the first region is controlled such that the breakdown voltage is smaller at the junction between the bottom of the deep well and the second region than elsewhere around the first region, whereby the junction forms a SPAD multiplication region when an appropriate bias voltage is applied between the contacts.2. A SPAD according to claim 1 , wherein the first and second contacts are arranged on the same surface.3. A SPAD according to claim 1 , wherein the second region is a substrate or epi-layer.4. A single photon avalanche diode claim 1 , SPAD claim 1 , for use in a CMOS integrated ...

Optical component having reduced dependency on etch depth

An optical device includes an active component on a base. The active component is a light sensor and/or a light modulator. The active component is configured to guide a light signal through a ridge of an active medium extending upwards from slab regions of the active medium. The slab regions are on opposing sides of the ridge. The active medium includes a doped region that extends into a lateral side of the ridge and also into one of the slab regions. The depth that the doped region extends into the slab region is further than the depth that the doped region extends into the ridge.

Semiconductor structure for a radiation detector and a radiation detector

A semiconductor structure for a radiation detector, comprising a substrate composed of a semiconductor material of a first conductivity type, a semiconductor substrate, wherein the semiconductor substrate is provided with a semiconductor layer provided on the substrate and having a higher resistance in comparison to the substrate, of the first conductivity type, and electrically doped with a doping concentration, a plurality of doped regions, wherein the plurality of doped regions are provided in the semiconductor substrate and separated from each other, of a second conductivity type that is opposite from the first conductivity type, and electrically doped with a doping concentration that is higher than the doping concentration in the semiconductor substrate, at least one further doping region, and a cover layer is provided.

PHOTON DETECTOR

A photon detection system comprising an avalanche photo-diode, said avalanche photodiode comprising a p-n junction formed from a first semiconductor layer having a first conductivity type and a second semiconductor layer having a second conductivity type, wherein the first conductivity type is one selected from n-type or p-type and the second conductivity type is different to the first conductivity type and is selected from n-type or p-type, wherein the first semiconductor layer is a doped layer which is doped with dopants of a first conductivity type and where there is a variation in the concentration of dopants of the first conductivity type such that the first layer comprises islands of high field zones surrounded by low field zones, the high and low field zones distributed laterally in the plane of the p-n junction, wherein the dopant concentration is higher in the high field zones than the low field zones, said system further comprising a biasing unit, said biasing unit being configured to apply a voltage which is static in time and a time varying voltage. 1. A photon detection system comprising an avalanche photo-diode , said avalanche photodiode comprising a p-n junction formed from a first semiconductor layer having a first conductivity type and a second semiconductor layer having a second conductivity type , wherein the first conductivity type is one selected from n-type or p-type and the second conductivity type is different to the first conductivity type and is selected from n-type or p-type , wherein the first semiconductor layer is a doped layer which is doped with dopants of a first conductivity type and where there is a variation in the concentration of dopants of the first conductivity type such that the first layer comprises islands of high field zones surrounded by low field zones , the high and low field zones distributed laterally in the plane of the p-n junction , wherein the dopant concentration is higher in the high field zones than the low ...

AVALANCHE PHOTODIODE RECEIVER

A method of operating an avalanche photodiode includes providing an avalanche photodiode having a multiplication region capable of amplifying an electric current when subject to an electric field. The multiplication region, in operation, has a first ionization rate for electrons and a second, different, ionization rate for holes. The method also includes applying the electric field to the multiplication region, receiving a current output from the multiplication region, and varying the electric field in time, whereby a portion of the current output is suppressed. 1. A method of operating an avalanche photodiode , comprising the steps of:a) providing an avalanche photodiode comprising a multiplication region capable of amplifying an electric current when subject to an electric field, said multiplication region, in operation, having a first ionization rate for electrons and a second ionization rate for holes, wherein said first ionization rate is different in magnitude from said second ionization rate;b) applying the electric field to the multiplication region;c) receiving a current output from the multiplication region; andd) varying the electric field in time, whereby a portion of the current output is suppressed.2. The method of claim 1 , wherein said electric field is varied in response to said current output.3. The method of wherein said electric field is reduced a predetermined time after said current output reaches a predetermined value.4. The method of further comprising the step of determining a statistical moment of the current output and varying the electric field based on said statistical moment.5. The method of wherein the statistical moment is the mean.6. The method of wherein said electric field is varied in a periodic fashion.7. The method of wherein said electric field is turned off for a period of time.8. The method of further comprising the step of amplifying the current output and varying the amount of amplification in time.9. An optical detector ...

Photodetector with surface plasmon resonance

Methods and structures for providing single-color or multi-color photo-detectors leveraging plasmon resonance for performance benefits. In one example, a radiation detector includes a semiconductor absorber layer having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer coupled to the absorber layer and having a second electrical conductivity type, and a plasmonic resonator coupled to the collector layer and having a periodic structure including a plurality of features arranged in a regularly repeating pattern.

LIGHT RECEIVING ELEMENT, SEMICONDUCTOR EPITAXIAL WAFER, METHOD FOR MANUFACTURING THE LIGHT RECEIVING ELEMENT, METHOD FOR MANUFACTURING THE SEMICONDUCTOR EPITAXIAL WAFER, AND DETECTING DEVICE

A light receiving element includes an InP substrate that is transparent to light having a wavelength of 3 to 12 μm, a buffer layer located in contact with the InP substrate, and a light-receiving layer having a multiple quantum well structure, the light-receiving layer having a cutoff wavelength of 3 μm or more and being lattice-matched with the buffer layer. In the light receiving element, the buffer layer is epitaxially grown on the InP substrate while the buffer layer and the InP substrate exceed a range of a normal lattice-matching condition, and the buffer layer is constituted by a GaSb layer. 1. A light receiving element formed by using a group III-V compound semiconductor , the light receiving element comprising:an InP substrate that is transparent to light having a wavelength of 3 to 12 μm;a buffer layer located in contact with the InP substrate; anda light-receiving layer having a multiple quantum well structure and located in contact with the buffer layer,wherein the light-receiving layer has a cutoff wavelength of 3 μm or more and is lattice-matched with the buffer layer,{'sub': 2', '1', '1', '2', '1, 'the buffer layer is epitaxially grown on the InP substrate while a value of |a−a|/aexceeds a range of a normal lattice-matching condition, where arepresents a lattice parameter of the buffer layer and arepresents a lattice parameter of the InP substrate, and'}the buffer layer is constituted by a GaSb layer.2. The light receiving element according to claim 1 , wherein the InP substrate that is transparent to light having a wavelength of 3 to 12 μm is an InP substrate to which sulfur (S) is not added.3. The light receiving element according to claim 1 , wherein the InP substrate that is transparent to light having a wavelength of 3 to 12 μm is an Fe-containing InP substrate or an undoped InP substrate.4. The light receiving element according to claim 1 , wherein the light-receiving layer has a p-n junction therein.5. The light receiving element according to ...

SOLID-STATE IMAGING DEVICE

According to an embodiment, a solid-state imaging device includes a photoelectric, conversion element. The photoelectric conversion element includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer. In the solid-state imaging device, D/L×n/N Подробнее

Enhanced lift-off techniques for use with dielectric optical coatings and light sensors produced therefrom

Light sensors including dielectric optical coatings to shape their spectral responses, and methods for fabricating such light sensors in a manner that accelerates lift-off processes and increases process margins, are described herein. In certain embodiments, a short duration soft bake is performed. Alternatively, or additionally, temperature cycling is performed. Alternatively, or additionally, photolithography is performed using a photomask that includes one or more dummy corners, dummy islands and/or dummy rings. Each of the aforementioned embodiments form and/or increase a number of micro-cracks in the dielectric optical coating not covering the photodetector sensor region, thereby enabling an accelerated lift-off process and an increased process margin. Alternatively, or additionally, a portion of the photomask can include chamfered corners so that the dielectric optical coating includes chamfered corners, which improves the thermal reliability of the dielectric optical coating.

Method and Apparatus for High Resolution Photon Detection Based on Extraordinary Optoconductance (EOC) Effects

The inventors disclose a new high performance optical sensor, preferably of nanoscale dimensions, that functions at room temperature based on an extraordinary optoconductance (EOC) phenomenon, and preferably an inverse EOC (I-EOC) phenomenon, in a metal-semiconductor hybrid (MSH) structure having a semiconductor/metal interface. Such a design shows efficient photon sensing not exhibited by bare semiconductors. In experimentation with an exemplary embodiment, ultrahigh spatial resolution 4-point optoconductance measurements using Helium-Neon laser radiation reveal a strikingly large optoconductance property, an observed maximum measurement of 9460% EOC, for a 250 nm device. Such an exemplary EOC device also demonstrates specific detectivity higher than 5.06×10cm√Hz/W for 632 nm illumination and a high dynamic response of 40 dB making such sensors technologically competitive for a wide range of practical applications. 1. A method comprising:perturbing a sensor with photons to create an extraordinary optoconductance (EOC) effect by the sensor, wherein the sensor comprises (1) a metal shunt, and (2) a planar semiconductor material in electrical contact with the metal shunt, the metal shunt located on a surface of the semiconductor material, thereby defining a semiconductor/metal interface for passing a flow of current between the semiconductor material and the metal shunt in response to the sensor being under an electrical bias, wherein a portion of that semiconductor material surface is not covered by the metal shunt, wherein the semiconductor material and the metal shunt lie in different planes that are substantially parallel planes, the semiconductor/metal interface thereby being parallel to the plane of semiconductor material, and wherein the semiconductor/metal interface is configured to exhibit a change in resistance corresponding to the EOC effect in response to the perturbing step.2. The method of further comprising:generating an image in response to the created ...

Solid-state imaging device, method for manufacturing the same, and imaging apparatus

Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging device 1 having a light-receiving portion 12 to photoelectrically convert incident light is characterized by including a film 21 , which is disposed on a light-receiving surface 12 s of the above-described light-receiving portion 12 and which lowers an interface state, and a film 22 , which is disposed on the above-described film 21 to lower the interface state and which has a negative fixed charge, wherein a hole accumulation layer 23 is disposed on the light-receiving surface 12 s side of the light-receiving portion 12.

Semiconductor device and manufacturing method thereof

In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.

AVALANCHE PHOTODIODE AND METHOD FOR MANUFACTURING THE SAME

An avalanche photodiode includes a substrate; an avalanche multiplying layer, a p-type electric field controlling layer, a light-absorbing layer, and a window layer sequentially laminated on the substrate. A p-type region is present in parts of the window layer and the light-absorbing layer. Carbon is the dopant of the electric field controlling layer. Zn is the dopant of the p-type region. A bottom face of the p-type region is closer to the substrate than is an interface between the light-absorbing layer and the window layer. 1. An avalanche photodiode comprising:a substrate;an avalanche multiplying layer, a p-type electric field controlling layer, a light-absorbing layer, and a window layer sequentially laminated on the substrate; and the electric field controlling layer is doped with carbon,', 'the p-type region is doped with zinc, and', 'a bottom face of the p-type region is closer to the substrate than is an interface between the light-absorbing layer and the window layer., 'a p-type region in parts of the window layer and the light-absorbing layer, wherein'}2. The avalanche photodiode according to claim 1 , wherein dopant impurity concentration in the electric field controlling layer is at least 2×10cmand does not exceed 2×10cm.34. The avalanche photodiode according to claim 1 , further comprising a buried semiconductor layer burying a side of the light-absorbing layer and having as a wider band-gap than the light-absorbing layer.4. A method for manufacturing an avalanche photodiode comprising:sequentially forming an avalanche multiplying layer, a p-type electric field controlling layer, a light-absorbing layer, and a window layer on a substrate; andforming a p-type region in parts of the window layer and the light-absorbing layer by diffusing Zn in the window layer and the light-absorbing layer, whereinthe electric field controlling layer is doped with carbon, anda bottom face of the p-type region is closer to the substrate than an interface between the light ...

PHOTO DETECTOR DEVICE, PHOTO SENSOR AND SPECTRUM SENSOR

A photodetector device includes: a first semiconductor region of a first conductivity type electrically connected to a first external electrode: a second semiconductor region of a second conductivity type formed on the first semiconductor region; a third semiconductor region of the first conductivity type formed on the second semiconductor region; and a plurality of fourth semiconductor regions of the second conductivity type formed on the second semiconductor region, each of the plurality of fourth semiconductor regions being surrounded by the third semiconductor region, including a second conductivity type impurity having a concentration higher than a concentration of the second semiconductor region, and electrically connected to a second external electrode. 1. A spectrum sensor comprising:a photodetector device;an angle restriction filter that transmits light incident thereon in an incident angle range toward the photodetector device; anda wavelength restriction filter that restricts wavelengths of light that passes through the angle restriction filter, a first semiconductor region of a first conductivity type electrically connected to a first connecting section;', 'a second semiconductor region of a second conductivity type formed on the first semiconductor region;', 'a third semiconductor region of the second conductivity type formed on the second semiconductor region, the third semiconductor region including a second conductivity type impurity having a higher concentration than a concentration of the second semiconductor region, and electrically connected to a second connecting section; and', 'a plurality of fourth semiconductor regions of the first conductivity type formed on the second semiconductor region, each of the plurality of fourth semiconductor regions being surrounded by the third semiconductor region., 'wherein the photodetector device comprises2. A spectrum sensor according to claim 1 , wherein each of the plurality of fourth semiconductor regions ...

METHOD AND DEVICE FOR ADJUSTING THE BIAS VOLTAGE OF A SPAD PHOTODIODE

The present disclosure relates to a method for adjusting a bias voltage of a SPAD photodiode, comprising successive steps of: applying to the photodiode a first test bias voltage lower than a normal bias voltage applied to the photodiode in a normal operating mode, subjecting the photodiode to photons, reading a first avalanche triggering signal of the photodiode, applying to the photodiode a second test bias voltage, different from the first test bias voltage, subjecting the photodiode to photons, reading a second avalanche triggering signal of the photodiode, increasing the normal bias voltage if the first and second signals indicate that the photodiode did not avalanche trigger, and reducing the normal bias voltage if the first and second signals indicate that the photodiode did avalanche trigger. 1. A method , comprising: applying to the first photodiode a first test bias voltage lower than a normal bias voltage applied to the first photodiode in a normal operating mode;', 'subjecting the first photodiode to photons;', 'reading a first avalanche triggering signal of the first photodiode;', 'applying to the first photodiode a second test bias voltage, different from the first test bias voltage;', 'subjecting the first photodiode to photons;', 'reading a second avalanche triggering signal of the first photodiode;', 'determining if the first photodiode triggered avalanche by analyzing the first and second triggering signals;', 'increasing the normal bias voltage if the first photodiode did not trigger avalanche; and, 'adjusting a bias voltage of a first single-photon avalanche photodiode (SPAD), the adjusting includingreducing the normal bias voltage if the first photodiode did trigger avalanche in response to both the first and second test bias voltages.2. A method according to claim 1 , further comprising:applying the normal bias voltage to a plurality of second SPAD photodiode while applying the normal bias voltage to the first SPAD photodiode;applying the first ...

Dual-SPAD-Based Single-Photon Receiver

A single-photon receiver is presented. The receiver comprises two SPADs that are monolithically integrated on the same semiconductor chip. Each SPAD is biased with a substantially identical gating signal. The output signals of the SPADs are combined such that capacitive transients present on each output signal cancel to substantially remove them from the output signal from the receiver. 1. A single-photon receiver comprising:a first SPAD that is operative for providing a first output signal;a second SPAD that is operative for providing a second output signal, the first SPAD and second SPAD being monolithically integrated;a splitter that is dimensioned and arranged to provide a first gating signal to each of the first SPAD and second SPAD; andan output terminal, the output terminal being operative for providing a third output signal that is based on the first output signal and the second output signal.2. The receiver of claim 1 , wherein the third output signal is based on a difference between the first output signal and the second output signal.3. The receiver of claim 1 , wherein the third output signal is based on a direct summation of the first output signal and the second output signal.4. The receiver of claim 3 , wherein the first SPAD claim 3 , second SPAD claim 3 , and splitter are arranged such that the effective gating of the first SPAD and the effective gating of the second SPAD are inverted with respect to one another.5. The receiver of further comprising an inverter that is operative for inverting one of the first output signal and second output signal.6. The receiver of wherein the first SPAD and second SPAD are configured in an anode-to-cathode arrangement.7. The receiver of wherein the first SPAD and second SPAD are configured in an anode-to-anode arrangement.8. The receiver of further comprising a resistor claim 7 , the resistor being electrically connected between the anode of the first SPAD and the anode of the second SPAD.9. The receiver of ...

Single-photon nano-injection detectors

Single-photon detectors, arrays of single-photon detectors, methods of using the single-photon detectors and methods of fabricating the single-photon detectors are provided. The single-photon detectors combine the efficiency of a large absorbing volume with the sensitivity of nanometer-scale carrier injectors, called “nanoinjectors”. The photon detectors are able to achieve single-photon counting with extremely high quantum efficiency, low dark count rates, and high bandwidths.

Photoreceptor with improved blocking layer

A photoreceptor includes a multilayer blocking structure to reduce dark discharge of the surface voltage of the photoreceptor resulting from electron injection from an electrically conductive substrate. The multilayer blocking structure includes wide band gap semiconductor layers in alternating sequence with one or more narrow band gap blocking layers. A fabrication method of the photoreceptor includes transfer-doping of the narrow band gap blocking layers, which are deposited in alternating sequence with wide band gap semiconductor layers to form a blocking structure. Suppression of hole or electron injection can be obtained using the method.

SCHOTTKY BARRIER DIODE AND APPARATUS USING THE SAME

A Schottky barrier diode includes a first semiconductor layer, a LOCOS layer arranged in contact with the first semiconductor layer, a Schottky junction region provided on a contact surface between the first semiconductor layer and a first electrode, a second semiconductor layer connected to the first semiconductor layer and having a higher carrier concentration than that of the first semiconductor layer, and a second electrode forming an ohmic contact with the second semiconductor layer. In this case, the Schottky junction region and the LOCOS layer are in contact. 1. A Schottky barrier diode comprising:a first semiconductor layer;a LOCOS layer arranged in contact with the first semiconductor layer;a Schottky junction region provided on a contact surface between the first semiconductor layer and a first electrode;a second semiconductor layer connected to the first semiconductor layer and having a higher carrier concentration than that of the first semiconductor layer; anda second electrode forming an ohmic contact with the second semiconductor layer, whereinthe Schottky junction region and the LOCOS layer are in contact.2. The Schottky barrier diode according to claim 1 , wherein the second semiconductor layer and the first semiconductor layer are integrally formed on a substrate.3. The Schottky barrier diode according to claim 1 , wherein the first electrode or the second electrode is also formed on at least a part of the LOCOS layer.4. The Schottky barrier diode according to claim 1 , wherein the Schottky junction region is surrounded by the LOCOS layer.5. The Schottky barrier diode according to claim 1 , wherein the LOCOS layer is formed to insulate the first electrode from the second electrode.6. The Schottky barrier diode according to claim 1 , wherein the first semiconductor layer includes an epitaxially grown semiconductor layer.7. The Schottky barrier diode according to claim 1 , wherein the Schottky barrier diode has an island shape on the semiconductor ...

Integrated optoelectronic device and system with waveguide and manufacturing process thereof

An integrated electronic device, delimited by a first surface and by a second surface and including: a body made of semiconductor material, formed inside which is at least one optoelectronic component chosen between a detector and an emitter; and an optical path which is at least in part of a guided type and extends between the first surface and the second surface, the optical path traversing the body. The optoelectronic component is optically coupled, through the optical path, to a first portion of free space and a second portion of free space, which are arranged, respectively, above and underneath the first and second surfaces.

PHOTODETECTOR WITH INTEGRATED MICROFLUIDIC CHANNEL AND MANUFACTURING PROCESS THEREOF

A photodetector including: a photodiode having a body made of semiconductor material delimited by a first surface, the body forming a first electrode region; a dielectric region, set on top of the first surface and delimited by a second surface; at least one channel extending within the dielectric region, starting from the second surface; and a first metallization, which is set on top of the second surface and is in electrical contact with the first electrode region. 1. A photodetector comprising: a body of semiconductor material having a first surface, and', 'a first electrode region formed within the body;, 'a photodiode that includesa dielectric region arranged on top of the first surface and having a second surface;a channel extending within the dielectric region, starting from said second surface; anda first metallization arranged on top of the second surface and electrically coupled with said first electrode region.2. The photodetector according to claim 1 , further comprising a closing region arranged on a top of said channel claim 1 , said closing region closing said channel at the top of the channel.3. The photodetector according to claim 2 , further comprising a first coating layer of dielectric material claim 2 , which coats side walls of said channel and forms a first thickened region and a second thickened region that coat portions of the side walls adjacent to the second surface claim 2 , thereby delimiting a channel opening of the channel.4. The photodetector according to claim 3 , wherein the closing region overlies the first coating layer and is arranged to close said channel opening.5. The photodetector according to claim 4 , wherein the closing region is made of metal material claim 4 , said photodetector further comprising a second coating layer of dielectric material claim 4 , arranged on top of the closing region and configured to electrically insulate the closing region from the first metallization.6. The photodetector according to claim 4 , ...

Unit pixel of image sensor and photo detector thereof

A unit pixel of an image sensor and a photo detector are disclosed. The photo detector of the present invention configured to absorb light can include: a light-absorbing part configured to absorb light by being formed in a floated structure; an oxide film being in contact with one surface of the light-absorbing part; a source being in contact with one side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; a drain facing the source so as to be in contact with the other side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; and a channel interposed between the source and the drain and configured to form flow of an electric current between the source and the drain.

PHOTODIODE DEVICE AND METHOD FOR PRODUCTION THEREOF

The photodiode device has an electrically conductive cathode layer () at a photodiode layer () composed of a semiconductor material. Doped anode regions () are situated at a top side of the photodiode layer facing away from the cathode layer. A trench () subdivides the photodiode layer. A conductor layer () is arranged in or at the trench and electrically conductively connects the cathode layer with a cathode connection (). Anode connections () are electrically conductively connected with the anode regions. 1. A photodiode device comprising:an electrically conductive cathode layer on a photodiode layer made of a semiconductor material;doped anode regions on an upper side of the photodiode layer facing away from the cathode layer;a trench that subdivides the photodiode layer;a conductor layer that is arranged in or on the trench and that electrically connects the cathode layer with a cathode terminal arranged above the upper side of the photodiode layer; andanode terminals arranged above the upper side of the photodiode layer and electroconductively connected with the anode regions.2. The photodiode device according to claim 1 , wherein the trench also subdivides the cathode layer.3. The photodiode device according to or claim 1 , wherein a plurality of mutually separated cathode terminals are provided claim 1 , and the conductor layer does not fill the trench and has a plurality of mutually separated portions claim 1 , each connected to one of the respective cathode terminals.4. The photodiode device according to claim 3 , wherein a dielectric trench filling is present in the trench between the portions of the conductor layer.5. The photodiode device according to claim 1 , wherein the photodiode layer is float-zone silicon claim 1 , and the anode regions are formed by a p+-type doping of the photodiode layer.6. The photodiode device according to claim 1 , wherein the cathode layer is subdivided into strip-shaped portions.7. The photodiode device according to claim 1 ...

Laser Processed Photovoltaic Devices and Associated Methods

Photovoltaic heterojunction devices, combination hetero- homo-junction devices, and associated methods are provided. In one aspect, for example, a photovoltaic device can include a doped semiconductor substrate having a first textured region and a second textured region opposite the first textured region, a first intrinsic semiconductor layer coupled to the first textured region opposite the semiconductor substrate and a second intrinsic semiconductor layer coupled to the second textured region opposite the semiconductor substrate. A first semiconductor layer can be coupled to the first intrinsic semiconductor layer opposite the first textured region, where the first semiconductor layer is doped to an opposite polarity of the doped semiconductor substrate. A second semiconductor layer can be coupled to the second intrinsic semiconductor layer opposite the second textured region, where the second semiconductor layer is doped to a same polarity as the semiconductor substrate but having a higher dopant concentration as the semiconductor substrate. 1. A photovoltaic device , comprising:a semiconductor substrate having a first textured region and a second textured region opposite the first texture region, wherein the semiconductor substrate is doped;a first intrinsic semiconductor layer coupled to the first textured region opposite the semiconductor substrate;a second intrinsic semiconductor layer coupled to the second textured region opposite the semiconductor substrate;a first semiconductor layer coupled to the first intrinsic semiconductor layer opposite the first textured region, wherein the first semiconductor layer is doped to an opposite polarity of the doped semiconductor substrate, thus forming a first junction with the semiconductor substrate;a second semiconductor layer coupled to the second intrinsic semiconductor layer opposite the second textured region, wherein the second semiconductor layer is doped to a same polarity as the semiconductor substrate but ...

PIXELS, IMAGERS AND RELATED FABRICATION METHODS

Pixels, imagers and related fabrication methods are described. The described methods result in cross-talk reduction in imagers and related devices by generating depletion regions. The devices can also be used with electronic circuits for imaging applications. 137-. (canceled)38. A pixel comprising:a first semiconductor layer of a first conductivity type;a second semiconductor layer of the first conductivity type, formed on the first semiconductor layer;a third semiconductor layer of a second conductivity type that is opposite to the first conductivity type, formed on the second semiconductor layer;a blocking region of the first conductivity type formed in the third semiconductor layer having a first depth from a pixel front side; anda charge collection region of the second conductivity type formed within the third semiconductor layer and the blocking region and extending vertically to a second depth from the pixel front side, wherein the first depth is deeper than the second depth, the charge collection region comprising a first charge collection portion and a second charge collection portion, andwherein the blocking region extends laterally to one direction up to a boundary between the first charge collection portion and the second charge collection portion.39. The pixel of claim 38 , further comprising:a first shallow trench isolation (STI) region formed under the pixel front side and beside a pixel first lateral side; anda second STI region formed under the pixel front side and beside a pixel second lateral side.40. A pixel comprising:a first semiconductor layer of a first conductivity type;a second semiconductor layer of the first conductivity type, formed on the first semiconductor layer;a third semiconductor layer of a second conductivity type that is opposite to the first conductivity type, formed on the second semiconductor layer;a blocking region of the first conductivity type formed in the third semiconductor layer having a first depth from a pixel front ...

Light detector with ge film

A light detector includes a first light sensor and a second light sensor to detect incident light. A Ge film is disposed over the first light sensor to pass infra-red (IR) wavelength light and to block visible wavelength light. The Ge film does not cover the second light sensor.

Photodetector, epitaxial wafer and method for producing the same

Provided are a photodetector in which, in a III-V semiconductor having sensitivity in the near-infrared region to the far-infrared region, the carrier concentration can be controlled with high accuracy; an epitaxial wafer serving as a material of the photodetector; and a method for producing the epitaxial wafer. Included are a substrate formed of a III-V compound semiconductor; an absorption layer configured to absorb light; a window layer having a larger bandgap energy than the absorption layer; and a p-n junction positioned at least in the absorption layer, wherein the window layer has a surface having a root-mean-square surface roughness of 10 nm or more and 40 nm or less.

PHOTONIC DEVICE

A photonic device is provided. The photonic device includes: a semiconductor layer including first and second regions; an insulating layer covering the semiconductor layer; and first and second plugs extending to pass through the insulating layer and electrically connected to the corresponding first and second regions. The first plug is in a rectifying contact with the first region, and the second plug is in an ohmic contact with the second region. 1. A photonic device comprising:a semiconductor layer including first and second regions;an insulating layer covering the semiconductor layer; andfirst and second plugs extending to pass through the insulating layer and electrically connected to the corresponding first and second regions;wherein the first plug is in a rectifying contact with the first region, and the second plug is in an ohmic contact with the second region.2. The photonic device of claim 1 , further comprising:first and second electrode pads disposed on the insulating layer;wherein the first and second regions are electrically connected with the first and second electrode pads by the respective first and second plugs.3. The photonic device of claim 1 , wherein:the semiconductor layer further comprises a third region that is disposed between the first and second regions and allows charge carries to flow between the first and second regions; andthe first and second regions have substantially similar charge carrier concentrations.4. The photonic device of claim 3 , wherein the first and third regions are intrinsic regions.5. The photonic device of claim 3 , wherein the first and third regions are extrinsic regions doped with dopants of a first or second conductivity type.6. The photonic device of claim 1 , wherein:the second region is doped with a dopant of a first or second conductivity type; andthe second region has a higher charge carrier concentration than the first region.7. The photonic device of claim 1 , wherein:the second region includes a first ...

High Speed Backside Illuminated, Front Side Contact Photodiode Array

The present specification discloses front-side contact back-side illuminated (FSC-BSL) photodiode array having improved characteristics such as high speed of each photodiode, uniformity of the bias voltage applied to different photodiode, low bias voltage, reduced resistance of each photodiode, and an associated reduction in noise. The photodiode array is made of photodiodes with front metallic cathode pads, front metallic anode pad, back metallic cathode pads, n+ doped regions and a p+ doped region. The front metallic cathode pads physically contact the n+ doped regions and the front metallic anode pad physically contacts the p+ doped region. The back metallic cathode pads physically contact the n+ doped region. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. (canceled)11. (canceled)12. (canceled)13. (canceled)14. (canceled)15. (canceled)16. (canceled)17. (canceled)18. (canceled)19. (canceled)20. (canceled)21. A photodiode array having a front side and a back side separated by a layer of silicon and a top edge , a bottom edge , a right edge , and a left edge , comprising:a plurality of metallic cathode pads extending from a surface of said front side of the photodiode array, wherein each of said metallic cathode pads is in physical contact with at least one n+ doped region and wherein said metallic cathode pads are interconnected by a metallic connections;a plurality of metallic cathode pads extending from a surface of said back side of the photodiode array wherein each of said metallic cathode pads is in physical contact with a second n+ doped region and wherein said metallic cathode pads are interconnected by a metallic connections; andan anode pad extending from the said front side of the photodiode array, wherein said anode pad is in physical contact with a p+ doped region.22. The photodiode array of wherein said photodiode array is comprised of a plurality of photodiodes claim 20 , each ...

MONOLITHIC THREE TERMINAL PHOTODETECTOR

Photodetectors operable to achieve multiplication of photogenerated carriers at ultralow voltages. Embodiments include a first p-i-n semiconductor junction combined with a second p-i-n semiconductor junction to form a monolithic photodetector having at least three terminals. The two p-i-n structures may share either the p-type region or the n-type region as a first terminal. Regions of the two p-i-n structures doped complementary to that of the shared terminal form second and third terminals so that the first and second p-i-n structures are operable in parallel. A multiplication region of the first p-i-n structure is to multiply charge carriers photogenerated within an absorption region of the second p-i-n structure with voltage drops between the shared first terminal and each of the second and third terminals being noncumulative. 1. A photodetector circuit , comprising:a first p-i-n structure coupled to a first terminal and to a second terminal;a second p-i-n structure coupled to the first terminal and to a third terminal; andone or more voltage supplies coupled across the first, second and third terminals to reverse bias the first and the second p-i-n structures in parallel, wherein the one or more voltage supplies are to provide a reverse bias across the first p-i-n structure sufficient to induce carrier multiplication within the first p-i-n structure, and wherein the one or more voltage supply are to provide a reverse bias across the second p-i-n structure sufficient to induce carrier drift within the second p-i-n structure.2. (canceled)3. The photodetector circuit of claim 1 , wherein the one or more voltage supplies are a single voltage supply claim 1 , wherein the second and third terminals are both coupled to a common node at a reference voltage claim 1 , and wherein a first i-layer is dimensioned to induce the carrier multiplication at the reverse bias provided across the first and second terminals by the single voltage supply.4. The photodetector circuit ...

Backside-Illuminated Photosensor Array With White, Yellow ad Red-Sensitive Elements

A monolithic backside-sensor-illumination (BSI) image sensor has a sensor array is tiled with a multiple-pixel cells having a first pixel sensor primarily sensitive to red light, a second pixel sensor primarily sensitive to red and green light, and a third pixel sensor having panchromatic sensitivity, the pixel sensors laterally adjacent each other. The image sensor determines a red, a green, and a blue signal comprising by reading the red-sensitive pixel sensor of each multiple-pixel cell to determine the red signal, reading the sensor primarily sensitive to red and green light to determine a yellow signal and subtracting the red signal to determine a green signal. The image sensor reads the panchromatic-sensitive pixel sensor to determine a white signal and subtracts the yellow signal to provide the blue signal.

Light Blocking Structure in Leadframe

A semiconductor proximity sensor ( 100 ) has a flat leadframe ( 110 ) with a first ( 110 a ) and a second ( 110 b ) surface, the second surface being solderable; the leadframe includes a first ( 111 ) and a second ( 112 ) pad, a plurality of leads ( 113, 114 ), and fingers ( 115, 118 ) framing the first pad, the fingers spaced from the first pad by a gap ( 116 ) which is filled with a clear molding compound. A light-emitting diode (LED) chip ( 120 ) is assembled on the first pad and encapsulated by a first volume ( 140 ) of the clear compound, the first volume outlined as a first lens ( 141 ). A sensor chip ( 130 ) is assembled on the second pad and encapsulated by a second volume ( 145 ) of the clear compound, the second volume outlined as a second lens ( 146 ). Opaque molding compound ( 150 ) fills the space between the first and second volumes of clear compound, forms shutters ( 151 ) for the first and second lenses, and forms walls rising from the frame of fingers to create an enclosed cavity for the LED. A layer ( 180 ) of solder is on the second leadframe surface of the pads, leads, and fingers.

Infrared photosensor

A thermal diode for a photosensor of a thermal imaging camera includes a semiconductor substrate having a surface and two doped structures set apart from each other on the surface. Furthermore, a device is provided for influencing a current between the first and the second structure, in order to reduce a current density in an area near to the surface and to increase it in an area far from the surface. In addition, a topology having an even absorption layer is proposed. The measures proposed have the aim of realizing a low-noise diode for thermal applications. 1. A thermal diode for a photosensor of a thermal imaging camera , comprising:a semiconductor substrate having a surface;a first doped structure on the surface;a second doped structure on the surface;the first doped structure and the second doped structure being set apart from each other on the surface; anda device to influence a current between the first doped structure and the second doped structure so that a current density is reduced in an area near to the surface and is increased in an area far from the surface.2. The thermal diode of claim 1 , wherein the device includes a third doped structure claim 1 , which is disposed between the first doped structure and the second doped structure on the surface.3. The thermal diode of claim 2 , wherein the third doped structure extends at least 100 nm below the surface of the semiconductor substrate.4. The thermal diode of claim 2 , wherein the second doped structure and the third doped structure surround the first doped structure concentrically.5. The thermal diode of claim 1 , wherein the device includes a doped base below one of the first doped structure and the second doped structure claim 1 , the doping extending at least 1 μm below the surface of the semiconductor substrate.6. The thermal diode of claim 4 , wherein the base is formed in one piece with one of the first doped structure and the second doped structure.7. The thermal diode of claim 4 , wherein the ...

ENHANCED VISIBLE NEAR-INFRARED PHOTODIODE AND NON-INVASIVE PHYSIOLOGICAL SENSOR

Embodiments of the present disclosure include a photodiode that can detect optical radiation at a broad range of wavelengths. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a monitored patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode. 120-. (canceled)21. A physiological sensor for measuring physiological parameters of a monitored patient , the physiological sensor comprising:a sensor housing;an emitter configured to emit optical radiation at one or more wavelengths; andone or more detectors configured to be positioned proximate to the emitter and tissue of a patient by the sensor housing, the one or more detectors comprising a semiconductor device configured to detect the optical radiation after attenuation by the tissue and generate a detector signal responsive to the detected optical radiation,wherein the semiconductor device comprises a window layer, a diffusion region, an absorption region, and a semiconductor wafer, the absorption region being between the window layer and the semiconductor wafer, andwherein the window layer has a thickness ranging from about 25 nm to about 150 nm, the diffusion region being a p-type region, the absorption region being an undoped region or a n-type region, the semiconductor wafer being the n-type region.22. The physiological sensor of claim 21 , wherein the absorption region is adjacent to the semiconductor wafer.23. The physiological sensor of claim 21 , wherein the window layer and the diffusion region are configured to receive the optical ...

SOLAR BLIND ULTRA VIOLET (UV) DETECTOR AND FABRICATION METHODS OF THE SAME

Described herein is device configured to be a solar-blind UV detector comprising a substrate; a plurality of pixels; a plurality of nanowires in each of the plurality of pixel, wherein the plurality of nanowires extend essentially perpendicularly from the substrate. 1. A device comprising:a substrate;a plurality of pixels;a plurality of nanowires in each of the plurality of pixel, the nanowires comprising silicon;wherein the plurality of nanowires extend essentially perpendicularly from the substrate and comprise silicon, and the plurality of nanowires essentially do not absorb radiation except UV radiation with a wavelength in the solar-blind UV region.2. The device of claim 1 , wherein the plurality of nanowires have an absorptance above 25% for UV light with a wavelength from 0.12 to 0.34 micron.3. The device of claim 1 , wherein each of the plurality of nanowires comprises a core and a cladding surrounding the core claim 1 , wherein the core has a higher refractive index than the cladding.4. The device of claim 1 , wherein each of the plurality of the nanowires comprises a coupler disposed on an end of each of the nanowire away from the substrate claim 1 , the coupler being functional to guide radiation into the nanowires.5. The device of claim 1 , wherein the nanowires have a height from about 0.1 μm to about 5 μm; the cladding has a thickness of about 10 nm to about 200 nm.6. The device of claim 1 , wherein the nanowires have a pitch from about 0.2 μm to about 2 μm.7. The device of claim 1 , wherein the nanowires detect UV radiation in the solar-blind UV region by converting UV radiation in the solar-blind UV region to an electrical signal.8. The device of claim 7 , wherein the device further comprises electrical components configured to detect the electrical signal.9. The device of claim 7 , wherein the device is functional to detect the electrical signal from the nanowires in different pixels separately.10. The device of claim 1 , wherein each of the ...

SEMICONDUCTOR LIGHT RECEIVING ELEMENT AND LIGHT RECEIVER

An APD in which a first undoped semiconductor region and a second undoped semiconductor region having different semiconductor materials and arranged on an insulating film configure a photo-absorption layer and a multiplying layer, respectively, is employed, whereby crystalline of an interface between the photo-absorption layer and the multiplying layer becomes favorable, and a dark current caused by crystal defects can be decreased. Accordingly, light-receiving sensitivity of an avalanche photodiode can be improved. Further, doping concentration of the light-receiving layer and the multiplying layer can be made small. Therefore, a junction capacitance of the diode can be decreased, and a high-speed operation becomes possible. 1. A semiconductor photodetector comprising:an insulating film formed on a substrate;a first undoped semiconductor region and a second undoped semiconductor region provided on the insulating film;an n-type electrode electrically connected to the first undoped semiconductor region; anda p-type electrode electrically connected to the second undoped semiconductor region,wherein the first undoped semiconductor region and the first undoped semiconductor region are configured from different semiconductor materials, and are arranged in a substrate in-plane direction.2. The semiconductor photodetector according to claim 1 , wherein the first undoped semiconductor region and the first undoped semiconductor region are in contact with each other in the substrate in-plane direction via a first p-type semiconductor region.3. The semiconductor photodetector according to claim 1 , wherein the first undoped semiconductor region and the first p-type semiconductor region include a first interface tapered relative to a surface of the substrate.4. The semiconductor photodetector according to claim 3 , wherein the first p-type semiconductor region and the second undoped semiconductor region include a second interface tapered relative to the surface of the substrate ...

Distance measuring method, distance measuring device, and recording medium

A distance measuring method according to the present disclosure includes: measuring, in an environment where background light is applied to an object, the illuminance of the background light; setting a distance measuring range based on the illuminance of the background light; setting, based on the distance measuring range set, an image capturing condition for an image capturer including a plurality of pixels each including an avalanche photo diode (APD) and an emission condition in which light is emitted from a light source; and measuring a distance to the object by controlling the image capturer and the light source based on the image capturing condition and the emission condition that are set.

DISTANCE IMAGE OBTAINING METHOD AND DISTANCE DETECTION DEVICE

A distance-image obtaining method includes: (A) setting a plurality of distance-divided segments in a depth direction, and (B) obtaining a distance image based on each of the plurality of distance-divided segments set. The obtaining of the distance image includes: obtaining a plurality of distance images by imaging two or more of the plurality of distance-divided segments, to obtain a first distance image group; and obtaining a plurality of distance images by imaging distance-divided segments, among the plurality of distance-divided segments, in a phase different from a phase of the two or more of the plurality of distance-divided segments, to obtain a second distance image group. 1. A distance-image obtaining method , comprising:(A) setting a plurality of distance-divided segments in a depth direction; and(B) obtaining a distance image based on each of the plurality of distance-divided segments set, wherein(B) includes:(B-1) obtaining a plurality of distance images by imaging two or more of the plurality of distance-divided segments, to obtain a first distance image group; and(B-2) obtaining a plurality of distance images by imaging distance-divided segments, among the plurality of distance-divided segments, in a phase different from a phase of the two or more of the plurality of distance-divided segments, to obtain a second distance image group.2. The distance-image obtaining method according to claim 1 , wherein the distance-divided segments have continuity in the depth direction.3. The distance-image obtaining method according to claim 1 , wherein the distance-divided segments have no continuity in the depth direction.4. The distance-image obtaining method according to claim 1 , wherein two or more distance-divided segments included in the two or more distance-divided segments imaged in (B-1) are displaced from two or more distance-divided segments included in the distance-divided segments imaged in (B-2) by a half segment claim 1 , respectively.5. The distance- ...

VISIBLE LIGHT DETECTOR WITH HIGH-PHOTORESPONSE BASED ON TiO2/MoS2 HETEROJUNCTION AND PREPARATION THEREOF

In the field of photoelectric devices, a visible light detector is provided with high-photoresponse based on a TiO/MoSheterojunction and a preparation method thereof. The detector, based on a back-gated field-effect transistor based on MoS, includes a MoSchannel, a TiOmodification layer, a SiOdielectric layer, Au source/drain electrodes and a Si gate electrode, The TiOmodification layer is modified on the surface of the MoSchannel. By employing micromechanical exfoliation and site-specific transfer of electrodes, the method is intended to prepare a detector by constructing a back-gated few-layer field-effect transistor based on MoS, depositing Ti on the channel surface, and natural oxidation. 1. A visible light detector with high-photoresponse based on a TiO/MoSheterojunction , wherein the detector is based on a back-gated field-effect transistor based on MoS , the detector comprising a MoSchannel , a TiOmodification layer , a SiOdielectric layer , Au source/drain electrodes and a Si gate electrode , the TiOmodification layer being modified on the surface of the MoSchannel , the TiOmodification layer being obtained from e-beam evaporation of a certain thickness of metallic Ti film on the surface of the MoSchannel and natural oxidation of the metallic Ti film , the MoSincluding a few layers of MoSflakes with a high crystallinity.2. The visible light detector with high-photoresponse based on TiO/MoSheterojunction according to claim 1 , wherein the MoSflakes are in a hexagonal phase with a single-crystal structure claim 1 , the few layers numbering 3-5 layers claim 1 , and the overall thickness is 2-2.5 nm.3. The visible light detector with high-photoresponse based on TiO/MoSheterojunction according to claim 1 , wherein the TiOmodification layer is a naturally oxidized TiOlayer having a thickness of 1-2 nm.4. The visible light detector with high-photoresponse based on TiO/MoSheterojunction according to claim 3 , wherein the TiOlayer is in a crystalline state or an ...

Integrated bound-mode spectral/angular sensors

A 2-D sensor array includes a semiconductor substrate and a plurality of pixels disposed on the semiconductor substrate. Each pixel includes a coupling region and a junction region, and a slab waveguide structure disposed on the semiconductor substrate and extending from the coupling region to the region. The slab waveguide includes a confinement layer disposed between a first cladding layer and a second cladding layer. The first cladding and the second cladding each have a refractive index that is lower than a refractive index of the confinement layer. Each pixel also includes a coupling structure disposed in the coupling region and within the slab waveguide. The coupling structure includes two materials having different indices of refraction arranged as a grating defined by a grating period. The junction region comprises a p-n junction in communication with electrical contacts for biasing and collection of carriers resulting from absorption of incident radiation.

INTEGRATED PRE-AMPLIFICATION LIGHT DETECTION SYSTEMS AND METHODS OF USE THEREOF

Systems for detecting light (e.g., in a flow stream) are described. Light detection systems according to embodiments include a photodetector, an input modulator configured to modulate signal input into the photodetector and an output modulator configured to modulate signal output from the photodetector. Photodetector arrays having a plurality of light detection systems, e.g., as described, are also provided. Methods for matching output signals from two or more photodetectors (e.g., a plurality of photomultiplier tubes in a photodetector array) are also described. Flow cytometer systems and methods for detecting light from a sample in a flow stream are provided. Aspects further include kits having two or more of the subject light detection systems. 1. A light detection system comprising:a photodetector;an input modulator configured to modulate signal input into the photodetector; andan output modulator configured to modulate signal output from the photodetector.2. The light detection system according to claim 1 , wherein the photodetector comprises a photomultiplier tube.3. The light detection system according to claim 1 , wherein the photodetector comprises a photodiode.4. The light detection system according to claim 3 , wherein the photodiode is an avalanche photodiode.5. The light detection system according to claim 1 , wherein the photodetector comprises a photocathode and an avalanche photodiode.6. The light detection system according to claim 1 , wherein the input modulator comprises an amplifier.7. The light detection system according to claim 6 , wherein the amplifier is a transimpedance amplifier.8. The light detection system according to claim 1 , wherein the input modulator comprises an array of resistors.9. The light detection system according to claim 1 , wherein the input modulator comprises an array of resistors and capacitors.10. The light detection system according to claim 1 , wherein the input modulator is configured to increase the current of the ...

Time-of-flight depth mapping with parallax compensation

An optical sensing device includes a light source, which is configured to emit one or more beams of light pulses at respective angles toward a target scene. An array of sensing elements is configured to output signals in response to incidence of photons on the sensing elements. Light collection optics are configured to image the target scene onto the array. Control circuitry is coupled to actuate the sensing elements only in one or more selected regions of the array, each selected region containing a respective set of the sensing elements in a part of the array onto which the light collection optics image a corresponding area of the target scene that is illuminated by the one of the beams, and to adjust a membership of the respective set responsively to a distance of the corresponding area from the device. 1. An optical sensing device , comprising:a light source, which is configured to emit one or more beams of light pulses at respective angles toward a target scene;an array of sensing elements configured to output signals in response to incidence of photons on the sensing elements;light collection optics configured to image the target scene onto the array; andcontrol circuitry coupled to actuate the sensing elements only in one or more selected regions of the array, each selected region containing a respective set of the sensing elements in a part of the array onto which the light collection optics image a corresponding area of the target scene that is illuminated by the one of the beams, and to adjust a membership of the respective set responsively to a distance of the corresponding area from the device,wherein each selected region has a boundary comprising multiple edges, which contain the respective set of the sensing elements, and wherein the control circuitry is configured to enlarge the selected region of the array responsively to the distance by shifting one edge of the boundary, such that the selected region contains a larger number of the sensing elements ...

LIGHT RECEIVING DEVICE, METHOD FOR FABRICATING LIGHT RECEIVING DEVICE

A method for fabricating a light receiving device includes: preparing a first substrate product which includes a semiconductor region having a common semiconductor layer, a first semiconductor laminate for a photodiode, a second semiconductor laminate for a waveguide, and a butt-joint between the first semiconductor laminate and the second semiconductor laminate, the first laminate and the second semiconductor laminate being disposed on the common semiconductor layer; etching the first substrate product with a first mask to form a second substrate product having a photodiode mesa structure produced from the first semiconductor laminate and a preliminary mesa structure produced from the second semiconductor laminate; etching the second substrate product with the first mask and a second mask, formed on the photodiode mesa structure; to produce a waveguide mesa structure from the preliminary mesa structure, and the waveguide mesa structure having a height larger than that of the preliminary mesa structure. 1. A method for fabricating a light receiving device comprising:preparing a first substrate product including a semiconductor base and a semiconductor region on the semiconductor base, the semiconductor region having a common semiconductor layer, a first semiconductor laminate for a photodiode structure, a second semiconductor laminate for a waveguide structure, and a butt-joint between the first semiconductor laminate and the second semiconductor laminate, and the first semiconductor laminate and the second semiconductor laminate being disposed on the common semiconductor layer;forming a first mask on the first substrate product, the first mask having a pattern on the first semiconductor laminate and the second semiconductor laminate, and the pattern of the first mask extending across the butt-joint;etching the first substrate product with the first mask and an etching gas to form a second substrate product, the second substrate product having a photodiode mesa ...

SYNAPTIC ELECTRONIC DEVICES WITH ELECTROCHROMIC DEVICE

A synaptic electronic device includes a substrate including a one or more of a semiconductor and an insulator; a photosensitive layer disposed on a surface of the substrate; an electrochromic stack disposed on the photosensitive layer, the electrochromic stack including a first transparent electrode layer, a cathodic electrochromic layer, a solid electrolyte layer, an anodic electrochromic layer, and a second transparent electrode layer; and a pair of electrodes disposed on the photosensitive layer and on opposing sides of the electrochromic stack. 1. A synaptic electronic device , comprising:a substrate comprising one or more of a semiconductor and an insulator;an electrochromic stack disposed on a surface of the substrate, the electrochromic stack comprises a first transparent electrode layer, a cathodic electrochromic layer, a solid electrolyte layer, an anodic electrochromic layer, and a second transparent electrode layer;a photosensitive layer disposed on the electrochromic stack; anda pair of electrodes disposed on and at opposing end of the photosensitive layer.2. The synaptic electronic device of claim 1 , further comprising a passivation layer on the photosensitive layer.3. The synaptic electronic device of claim 2 , wherein the passivation layer is arranged between electrodes of the pair of electrodes.4. The synaptic electronic device of claim 1 , wherein the first transparent electrode layer comprises indium tin oxide.5. The synaptic electronic device of claim 1 , wherein the second transparent electrode layer comprises indium tin oxide.6. The synaptic electronic device of claim 1 , wherein the first transparent electrode layer comprises graphene.7. The synaptic electronic device of claim 1 , wherein the second transparent electrode layer comprises graphene.8. The synaptic electronic device of claim 1 , wherein the solid electrolyte layer comprises zirconium oxide.9. The synaptic electronic device of claim 1 , wherein the anodic electrochromic layer ...

PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE

An imaging device with excellent imaging performance is provided. An imaging device that easily performs imaging under a low illuminance condition is provided. A low power consumption imaging device is provided. An imaging device with small variations in characteristics between its pixels is provided. A highly integrated imaging device is provided. A photoelectric conversion element includes a first electrode, and a first layer, a second layer, and a third layer. The first layer is provided between the first electrode and the third layer. The second layer is provided between the first layer and the third layer. The first layer contains selenium. The second layer contains a metal oxide. The third layer contains a metal oxide and also contains at least one of a rare gas atom, phosphorus, and boron. The selenium may be crystalline selenium. The second layer may be a layer of an In—Ga—Zn oxide including c-axis-aligned crystals. 1. A photoelectric conversion element comprising:a first electrode;a first layer;a second layer; anda third layer,wherein the first layer is positioned between the first electrode and the third layer,wherein the second layer is positioned between the first layer and the third layer,wherein the first layer comprises selenium,wherein the second layer comprises a metal oxide, and{'sup': 1', '2, 'wherein the third layer comprises a metal oxide and has an electrical conductivity of greater than or equal to 2.0×10S/cm and less than or equal to 2.6×10S/cm.'}2. The photoelectric conversion element according to claim 1 , wherein the second layer comprises c-axis-aligned crystals.3. The photoelectric conversion element according to claim 1 , wherein the selenium is crystalline selenium.4. The photoelectric conversion element according to claim 1 ,wherein the metal oxide of the second layer comprises In, Ga, and Zn, andwherein the metal oxide of the third layer comprises In, Ga, and Zn.5. The photoelectric conversion element according to claim 1 ,wherein ...

Photodetector

A photodetector includes: a pixel array in which a plurality of pixels are arranged in an array. Each of the plurality of pixels includes: a first semiconductor layer and a second semiconductor layer which are a first conductivity type, the second semiconductor layer located above the first semiconductor layer and having an impurity concentration lower than the impurity concentration of the first semiconductor layer; and a first semiconductor region, of a second conductivity type different from the first conductivity type, which is disposed in the second semiconductor layer and joined to the first semiconductor layer. The first semiconductor layer and the first semiconductor region constitute a multiplication region in which a charge is multiplied by avalanche multiplication. The pixel array includes a first separator of the first conductivity type disposed in the second semiconductor layer and a second separator of the first conductivity type disposed in the first semiconductor layer.

Image sensor with large dynamic range

Disclosed herein is an image sensor comprising an array of APDs, an electronic system configured to individually control reverse biases on the APDs based on intensities of light incident on the APDs.

Method for Fabricating an Avalanche Photodiode Device

A method is provided for fabricating an avalanche photodiode (APD) device, in particular, a separate absorption charge multiplication (SACM) APD device. The method includes forming a first contact region and a second contact region in a semiconductor layer. Further, the method includes forming a first mask layer above at least a first contact region of the semiconductor layer adjacent to the first contact region, and forming a second mask layer above and laterally overlapping the first mask layer. Thereby, a mask window is defined by the first mask layer and the second mask layer, and the first mask layer and/or the second mask layer are formed above a second contact region of the semiconductor layer adjacent to the second contact region. Further, the method includes forming a charge region in the semiconductor layer through the mask window, wherein the charge region is formed between the first contact region and the second contact region, and comprises forming an absorption region on the first contact region using the first mask layer. An APD fabricated by the disclosed method is also provided.

SEMICONDUCTOR PHOTOMULTIPLIER AND A PROCESS OF MANUFACTURING A PHOTOMULTIPLIER MICROCELL

The present disclosure relates to a process of manufacturing a photomultiplier microcell. The process comprises providing an insulating layer over an active region; and implanting a dopant through the insulating layer to form a photosensitive diode in the active region. The insulating layer once formed is retained over the active region throughout the manufacturing process. 1. A process of manufacturing a photomultiplier microcell; the process comprising;providing an insulating layer over an active region; andimplanting a dopant through the insulating layer to form a photosensitive diode in the active region; wherein the insulating layer once formed is retained over the active region throughout the manufacturing process.2. A process of claim 1 , wherein an epitaxial layer is provided intermediate the insulating layer and a substrate.3. A process of claim 1 , wherein the insulating layer is formed directly on a surface of a substrate.4. A process of claim 2 , wherein the insulating layer is formed directly on the epitaxial layer.5. A process of claim 2 , wherein in the epitaxial layer comprises a PN junction with specific implanted dopants to create a Geiger Mode Avalanche Photo diode.6. A process of claim 1 , wherein the substrate is highly doped for providing a low resistivity bulk region.7. A process of claim 1 , wherein the insulating layer comprises an oxide material claim 1 ,8. A process of claim 1 , wherein an anti-reflective coating is provided on the insulating layer.9. A process of claim 1 , wherein an optical pathway is provided for facilitating the transmission of light to the active region through the insulating layer.10. A process of claim 9 , wherein the optical pathway is formed by etching a trench into a dielectric layer.11. A process of claim 10 , wherein an etch stop is formed on the insulating layer.12. A process of claim 1 , wherein the etch stop is removed after the trench has been formed.13. A process of claim 1 , further comprising forming a ...

SOLID-STATE IMAGING APPARATUS AND DRIVING METHOD THEREOF

The present technology relates to a solid-state imaging apparatus and a driving method that can perform imaging at lower power consumption. 1. A TOF sensor , comprising:a plurality of avalanche photodiodes arranged in a two-dimensional array, including a first avalanche photodiode and a second avalanche photodiode;a first transistor coupled to an anode or a cathode of the first avalanche photodiode; anda second transistor coupled to an anode or a cathode of the second avalanche photodiode,wherein, in a first mode, the first transistor is in an ON state and the second transistor is in an ON state,wherein, in a second mode, the first transistor is in the ON state and the second transistor is in an OFF state,wherein the light detecting device is configured to switch between the first mode and the second mode, andwherein the first avalanche photodiode and the second avalanche photodiode are in the same row of the two-dimensional array.2. The TOF sensor according to claim 1 , whereinthe plurality of avalanche photodiode further includes a third avalanche photodiode and a third transistor is coupled to an anode or cathode of the third avalanche photodiode,wherein the third transistor is in an ON state in the first mode and the second mode, andwherein the second avalanche photodiode is between the first and the third avalanche photodiode.3. The TOF sensor according to claim 1 , wherein the light detecting device is configured to switch from the first mode to the second mode according to an amount of incident light.4. The TOF sensor according to claim 1 , wherein the light detecting device is configured to switch from the first mode to the second mode in a case where the amount of incident light exceeds a predetermined threshold.5. The TOF sensor according to claim 1 , whereinthe plurality of avalanche photodiodes are disposed at a side of a first surface of a semiconductor substrate that is a light incident surface, andthe anode or the cathode of the first avalanche ...

PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF DRIVING PHOTOELECTRIC CONVERSION DEVICE

A photoelectric conversion device includes a plurality of pixels each including an avalanche diode, a quench unit reducing the avalanche multiplication of the avalanche diode, a pulse conversion unit converting an output signal of the avalanche diode into pulses, and a signal generation unit generating an accumulation signal obtained by accumulating the number of pulses, a detection unit detecting whether or not the width of the pulse is not smaller than a predetermined width, and a voltage control unit controlling a reverse bias voltage applied to the avalanche diode within a range not lower than the breakdown voltage of the avalanche diode based on the result of the detection. The voltage control unit lowers the reverse bias voltage within a range not lower than the breakdown voltage when the accumulation value of pixels whose pulse width is not smaller than a predetermined width is not smaller than a predetermined value. 1. A photoelectric conversion device comprising:a plurality of pixels each including an avalanche diode that photoelectrically converts incident light and multiplies generated charge by an avalanche multiplication, a quench unit that reduces the avalanche multiplication of the avalanche diode, a pulse conversion unit that converts an output signal of the avalanche diode into pulses, and a signal generation unit that generates an accumulation signal obtained by integrating or accumulating a number of pulses output from the pulse conversion unit;a detection unit that detects whether or not the pulse output from the pulse conversion unit has a width not smaller than a predetermined width; anda voltage control unit that controls a reverse bias voltage applied to the avalanche diode within a range not lower than a breakdown voltage of the avalanche diode based on a detection result of the detection unit,wherein the voltage control unit includes an accumulation unit that accumulates the number of pixels that output a pulse having a pulse width not ...

IMAGING PROCESSING CIRCUIT, IMAGING SYSTEM, IMAGING PROCESSING METHOD, AND NON-TRANSITORY STORAGE MEDIUM

An imaging processing circuit includes a restrictor (an offset circuit). The restrictor is configured to restrict at least one of a maximum value or a minimum value for an output signal from a photoelectric converter which is configured to convert a photon into an electric charge and whose conversion ratio from the photon to the electric charge is variable. The restrictor restricts a difference between the maximum value and the minimum value of the output signal from the photoelectric converter when the conversion ratio is a first conversion ratio to be smaller than a difference between the maximum value and the minimum value of the output signal from the photoelectric converter when the conversion ratio is a second conversion ratio. The second conversion ratio is less than the first conversion ratio. 1. An imaging processing circuit comprising a restrictor configured to restrict at least one of a maximum value or a minimum value for an output signal from a photoelectric converter which is configured to convert a photon into an electric charge and whose conversion ratio from the photon to the electric charge is variable ,the restrictor restricting a difference between the maximum value and the minimum value of the output signal from the photoelectric converter when the conversion ratio is a first conversion ratio to be smaller than a difference between the maximum value and the minimum value of the output signal from the photoelectric converter when the conversion ratio is a second conversion ratio less than the first conversion ratio.2. The imaging processing circuit of claim 1 , whereinthe restrictor includes at least one restrictor,the photoelectric converter includes a plurality of photoelectric converters, andone restrictor of the at least one restrictor restricts at least one of a maximum value or a minimum value for each of output signals of two or more photoelectric converters of the plurality of photoelectric converters.3. The imaging processing circuit of ...

ELECTROMAGNETIC WAVE DETECTOR AND ELECTROMAGNETIC WAVE DETECTOR ARRAY

An electromagnetic wave detector includes: a substrate; an insulating layer provided on the substrate; a graphene layer provided on the insulating layer; a pair of electrodes provided on the insulating layer, with the graphene layer being interposed therebetween; and buffer layers interposed between the graphene layer and the electrodes to separate the graphene layer and the electrodes from each other. The electromagnetic wave detector array includes arrayed electromagnetic wave detectors that are the same as or different from each other. 113-. (canceled)14: An electromagnetic wave detector comprising:a conductive substrate;an insulating layer provided on the substrate;a graphene layer provided on the insulating layer;a pair of electrodes provided on the insulating layer, with the graphene layer interposed between the pair of electrodes; andbuffer layers interposed between the graphene layer and each of the electrodes respectively and separating the graphene layer and the electrodes from each other.15: The electromagnetic wave detector according to claim 14 , wherein each of the pair of electrodes is made of the same material.16: The electromagnetic wave detector according to claim 14 , wherein each of the pair of electrodes is made of a material different from the other.17: The electromagnetic wave detector according to claim 14 , wherein a Dirac point (DPe) which is different from a Dirac point in the graphene layer is formed between the graphene layer and the electrode.18: The electromagnetic wave detector according to claim 14 , wherein each of the electrodes is made of metal and each of the buffer layers is made of an oxide of the metal.19: The electromagnetic wave detector according to claim 14 , wherein a protective film is provided so as to cover the graphene layer and the buffer layers.20: The electromagnetic wave detector according to claim 14 , wherein claim 14 , in the pair of electrodes claim 14 , a size of an area where each of the electrodes faces the ...

Photogate For Front-Side-Illuminated Infrared Image Sensor and Method of Manufacturing the Same

An image sensor includes a substrate and a plurality of infrared pixels formed in a front side of the substrate and configured to detect infrared light incident on the front side of the substrate. Each of the infrared pixels includes a photodiode, a region free of implants located above the photodiode, and a photogate formed over the substrate and above the photodiode. The image sensor also includes a plurality of color pixels dispersed among the infrared pixels, where each of the color pixels includes a pinned photodiode and is configured to detect visible light. The photodiode of each of the infrared pixels can include a deep charge-accumulation region underlying the pinned photodiode(s) of one or more neighboring color pixel(s). Methods of manufacturing also described and include forming the deep charge-accumulation regions and associated elements prior to forming any implant-blocking elements (e.g., polysilicon photogates) over the substrate. 1. An image sensor comprising:a substrate;a first plurality of pixels formed in said substrate;a second plurality of pixels formed in said substrate; and whereinsaid first plurality of pixels and said second plurality of pixels are arranged to define a sensor array having a plurality of rows and a plurality of columns, pixels of said second plurality being dispersed among said pixels of said first plurality in said sensor array;each pixel of said first plurality includes a photodetector of a first type configured to detect light in the visible spectrum; andeach pixel of said second plurality includes a photodetector of a second type comprising a photogate and being configured to detect infrared light.2. The image sensor of claim 1 , wherein said photodetector of said second type further comprises a photodiode formed in said substrate below said photogate.3. The image sensor of claim 2 , wherein:said photodetector of said first type comprises a pinned photodiode; andsaid photodetector of said second type is free of an ...

PHOTODETECTOR

A solid-state imaging device includes: a p-type semiconductor substrate; an n-type first semiconductor layer located above the semiconductor substrate and forming a junction with the semiconductor substrate in the first area; and an n-type second semiconductor layer located between the semiconductor substrate and the first semiconductor layer in the second area outward of the first area and having an impurity concentration lower than an impurity concentration of the first semiconductor layer. The semiconductor substrate and the first semiconductor layer form APD1, and the second semiconductor layer extends to a level below an interface between the semiconductor substrate and the first semiconductor layer in a thickness direction of the semiconductor substrate. 1. A photodetector , comprising:a semiconductor substrate of a first conductivity type;a first semiconductor layer of a second conductivity type that is located above the semiconductor substrate and forms a junction with the semiconductor substrate in a first area, the second conductivity type being different from the first conductivity type; anda second semiconductor layer of the second conductivity type that is located above the semiconductor substrate in a second area outward of the first area, the second semiconductor layer having an impurity concentration lower than an impurity concentration of the first semiconductor layer, whereinthe semiconductor substrate and the first semiconductor layer form a photoelectric converter including a charge multiplication region in which charges are multiplied by avalanche multiplication, andthe second semiconductor layer extends to a level below an interface between the semiconductor substrate and the first semiconductor layer in a thickness direction of the semiconductor substrate.2. The photodetector according to claim 1 , further comprising:a well that is located above the semiconductor substrate, in a third area inward of the first area; andan isolation region of ...

PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION DEVICE INCLUDING THE SAME

A photoelectric conversion element includes a buffer layer, a BSF layer, a base layer, a photoelectric conversion layer, an emitter layer, a window layer, a contact layer, and a p-type electrode sequentially on one surface of a substrate, and includes an n-type electrode on the other surface of the substrate. The photoelectric conversion layer has at least one quantum dot layer. The at least one quantum dot layer includes a quantum dot and a barrier layer. A photoelectric conversion member including the buffer layer, the BSF layer, the base layer, the photoelectric conversion layer, the emitter layer, the window layer, and the contact layer has an edge of incidence that receives light in an oblique direction relative to the growth direction of the quantum dot. A concentrator concentrates sunlight and causes the concentrated sunlight to enter the photoelectric conversion member from the edge of incidence. 1. A photoelectric conversion element comprising:a substrate;a photoelectric conversion layer disposed on the substrate and having at least one quantum layer;a concentrator;a first electrode disposed at one side of the photoelectric conversion layer in a thickness direction; anda second electrode disposed at the other side of the photoelectric conversion layer in the thickness direction, wherein the photoelectric conversion layer has an edge of incidence at one end of the photoelectric conversion layer in a direction perpendicular to the thickness direction of the photoelectric conversion layer, the edge of incidence guiding light from the concentrator to the photoelectric conversion layer in an oblique direction relative to the thickness direction of the photoelectric conversion layer.2. The photoelectric conversion element according to claim 1 , further comprising a first metal layer disposed on an edge opposite to the edge of incidence in the direction perpendicular to the thickness direction of the photoelectric conversion layer.3. The photoelectric conversion ...

2D CRYSTAL HETERO-STRUCTURES AND MANUFACTURING METHODS THEREOF

A method of fabricating a semiconductor device having two dimensional (2D) lateral hetero-structures includes forming alternating regions of a first metal dichalcogenide film and a second metal dichalcogenide film extending along a surface of a first substrate. The first metal dichalcogenide and the second metal dichalcogenide films are different metal dichalcogenides. Each second metal dichalcogenide film region is bordered on opposing lateral sides by a region of the first metal dichalcogenide film, as seen in cross-sectional view. 1. A semiconductor device comprising:a patterned first metal dichalcogenide film disposed on a substrate;a second metal dichalcogenide film disposed between adjacent portions of the patterned first metal dichalcogenide film,wherein the first metal dichalcogenide film and the second metal dichalcogenide film are different metal dichalcogenides;a gate dielectric layer disposed over a central portion of the second metal dichalcogenide film;a gate electrode layer disposed over the gate dielectric layer; andsource/drain electrodes disposed over opposing end portions of the second metal dichalcogenide film.2. The semiconductor device of claim 1 , wherein the second metal dichalcogenide film is a monolayer film.3. The semiconductor device of claim 1 , wherein the first metal dichalcogenide film and the second metal dichalcogenide film are arranged in alternating regions.4. The semiconductor device of claim 3 , wherein adjacent portions of the first metal dichalcogenide film are spaced-apart by a distance of 1 nm to 10 nm in the alternating regions.5. The semiconductor device of claim 3 , wherein adjacent portions of the second metal dichalcogenide film are spaced-apart by a distance of about 5 nm to about 30 nm in the alternating regions.6. The semiconductor device of claim 1 , wherein the substrate is made of sapphire.7. The semiconductor device of claim 1 , wherein the first metal dichalcogenide film has a thickness of about 0.5 nm to about ...

TOOLS AND METHODS FOR PRODUCING NANOANTENNA ELECTRONIC DEVICES

The present disclosure advances the art by providing a method and system for forming electronic devices. In particular, and by example only, methods are described for forming devices for harvesting energy in the terahertz frequency range on flexible substrates, wherein the methods provide favorable accuracy in registration of the various device elements and facilitate low-cost R2R manufacturing 1. A rectifying antenna system for converting electromagnetic radiation into electricity , the system comprising:a. a film substrate having a first electrically conductive layer that is planar and adjacent to the film substrate, wherein the first electrically conductive layer is configured as a first antenna structure with associated contact leads;b. a first insulator layer that is planar and in contact with at least one portion of the first electrically conductive layer, wherein an interface between the first electrically conductive layer and the first insulator layer forms a first diode junction having a first pattern;c. a second insulator layer overlying the first insulator layer, wherein an interface between the first and second insulator layers forms a second diode junction having a second pattern, wherein the second pattern is similar to the first pattern;d. a second electrically conductive layer overlying the second insulator layer, wherein an interface between the second electrically conductive layer and the second insulator layer forms a third diode junction having a third pattern;e. a standoff structure that is insulating and complementary to the antenna structure component, wherein the standoff structure is essentially planar and in direct contact with at least one part of the second electrically conductive layer and has approximately the same height relative to the film substrate; andf. a third electrically conductive layer in contact with an upper surface, distal from the film substrate, of the standoff structure and adjacent to the third diode junction, thereby ...

MULTILEVEL SEMICONDUCTOR DEVICE AND STRUCTURE

A multi-level semiconductor device, the device including: a first level including integrated circuits; a second level including an optical waveguide, where the second level is disposed above the first level, where the first level includes crystalline silicon; and an oxide layer disposed between the first level and the second level, where the second level is bonded to the oxide layer, and where the bonded includes oxide to oxide bonds. 1. A multi-level semiconductor device , the device comprising:a first level comprising integrated circuits; wherein said second level is disposed above said first level,', 'wherein said first level comprises crystalline silicon; and, 'a second level comprising an optical waveguide,'} wherein said second level is bonded to said oxide layer, and', 'wherein said bonded comprises oxide to oxide bonds., 'an oxide layer disposed between said first level and said second level,'}2. The device according to claim 1 , further comprising:a plurality of optical modulators.3. The device according to claim 1 , further comprising:a plurality of photo detectors.4. The device according to claim 1 , further comprising: 'wherein said crystalline silicon layer has a thickness less than 60 microns.', 'a third level comprising a crystalline silicon layer,'}5. The device according to claim 1 ,wherein said optical waveguide comprises a hollow-metal waveguide.6. The device according to claim 1 ,wherein said optical waveguide comprises a first material comprising a high index of refraction surrounded by a second material comprising a lower index of refraction.7. The device according to claim 1 , further comprising: 'wherein said third level comprises a layer comprising electronic circuits comprising crystalline silicon.', 'a third level,'}8. A multi-level semiconductor device claim 1 , the device comprising:a first level comprising an optical waveguide; wherein said second level is disposed above said first level,', 'wherein said first level comprises ...

SUPERLATTICE PHOTO DETECTOR

A photo detector includes a superlattice with an undoped first semiconductor layer including undoped intrinsic semiconductor material, a doped second semiconductor layer having a first conductivity type on the first semiconductor layer, an undoped third semiconductor layer including undoped intrinsic semiconductor material on the second semiconductor layer, and a fourth semiconductor layer having a second opposite conductivity type on the third semiconductor layer, along with a first contact having the first conductivity type in the first, second, third, and fourth semiconductor layers, and a second contact having the second conductivity type and spaced apart from the first contact in the first, second, third, and fourth semiconductor layers. An optical shield on a second shielded portion of a top surface of the fourth semiconductor layer establishes electron and hole lakes. A packaging structure includes an opening that allows light to enter an exposed first portion of the top surface of the fourth semiconductor layer. 1. A photo detector , comprising: a first semiconductor layer, the first semiconductor layer including undoped intrinsic semiconductor material,', 'a second semiconductor layer on the first semiconductor layer, the second semiconductor layer having a first conductivity type,', 'a third semiconductor layer on the second semiconductor layer, the third semiconductor layer including undoped intrinsic semiconductor material, and', 'a fourth semiconductor layer on the third semiconductor layer, the fourth semiconductor layer having a second opposite conductivity type;, 'a superlattice, includinga first contact extending through the first, second, third, and fourth semiconductor layers, the first contact having the first conductivity type; anda second contact extending through the first, second, third, and fourth semiconductor layers, the second contact spaced apart from the first contact, and having the second conductivity type.2. The photo detector of ...

PHOTOELECTRIC DETECTOR, PREPARATION METHOD THEREOF, DISPLAY PANEL AND DISPLAY DEVICE

The present disclosure discloses a photoelectric detector, a preparation method thereof, a display panel and a display device. The photoelectric detector includes a base, and a thin film transistor (TFT) and a photosensitive PIN device on the base, wherein the PIN device includes an I-type region that does not overlap with an orthographic projection of the TFT on the base; a first etching barrier layer covering a top surface of the I-type region; a first heavily doped region in contact with a side surface on a side, proximate to the TFT, of the I-type region; and a second heavily doped region in contact with a side surface on a side, away from the TFT, of the I-type region, the doping types of the first heavily doped region and the second heavily doped region being different from each other. 1. A photoelectric detector , comprising a base , a thin film transistor (TFT) on the base , and a photosensitive PIN device on the base , wherein the PIN device comprises:an I-type region, wherein an orthographic projection, on the base, of the I-type region does not overlap with an orthographic projection, on the base, of the TFT;a first etching barrier layer, covering a top surface of the I-type region;a first heavily doped region, in contact with a side surface on a side, proximate to the TFT, of the I-type region;a second heavily doped region, in contact with a side surface on a side, away from the TFT, of the I-type region; wherein a doping type of the first heavily doped region is different from a doping type of the second heavily doped region;a first electrode, covering a top surface of the first heavily doped region; wherein the first electrode is electrically connected to a drain of the TFT; anda second electrode, covering a top surface of the second heavily doped region; wherein the second electrode is electrically connected to an electrode lead wire.2. The photoelectric detector according to claim 1 , wherein the PIN device further comprises:a second etching barrier ...