Slot machine including a plurality of video reel strips

Provided is a slot machine capable of reducing unfairness which may result between a player who has made an investment and a player who has not made an investment and allowing a player to proceed with a game by making an investment in expectation of a jackpot at ease. Each money amount which is constant is accumulated independently of a number of bets each time betting is conducted, and upon winning a jackpot, a money amount calculated by multiplying a money amount accumulated until then by a multiplying factor based on the number of bets is provided.

Double-headed piston type compressor

In a double-headed piston type compressor provided with a rotary valve in a rotary shaft, the rotary valve has an introducing port for introducing refrigerant from a suction-pressure region through a supply passage and a respective suction port into a compression chamber. A shaft seal between a front housing and the rotary shaft for preventing leakage of refrigerant along a peripheral surface of the rotary shaft is accommodated in a shaft seal chamber formed in the front housing. A communication passage connects the shaft seal chamber to the cam chamber. A communication groove is formed in an outer peripheral surface of the rotary shaft that forms the rotary valve adjacent to the front housing for communication between the introducing port and the shaft seal chamber. The supply passage and the cam chamber are in communication through the communication groove, the shaft seal chamber and the communication passage.

Network server load detection system, sharing system and method

In order to measure the load on a server and perform its allotment with high efficiency, the communication from a client to a server is monitored. The communication data size per connection is measured as the load on the server, the change of the communication data size per connection is detected, the maximum is recorded, and if the communication data size decreases at the time when the maximum is detected, the load on the server is judged to be heavy.

Method of manufacturing solid-state image sensor

A method of manufacturing a solid-state image sensor having a pixel region and a peripheral circuit region, includes forming an oxide film on a semiconductor substrate, forming an insulating film on the oxide film, forming a first opening in the insulating film and the oxide film in the peripheral circuit region, forming a trench in the semiconductor substrate in the peripheral circuit region by etching the semiconductor substrate through the first opening using the insulating film as a mask, forming a second opening in the insulating film to penetrate through the insulating film in the pixel region and to reach a predetermined depth of the oxide film, and forming insulators in the trench and the second opening.

Semiconductor device, electronic component, and electronic device

A semiconductor device suitable for low-voltage driving. The semiconductor device includes a first transistor, a second transistor, a power supply line, a circuit, and a memory circuit. The first transistor controls electrical continuity between the circuit and the power supply line. The memory circuit stores data for setting a gate potential of the first transistor. The second transistor controls electrical continuity between an output node of the memory circuit and a gate of the first transistor. The second transistor is a transistor with an ultralow off-state current, for example, an oxide semiconductor transistor. In a period for operating the circuit, a first potential is input to the power supply line and the second transistor is turned off. In a period for updating the gate potential of the first transistor, a second potential is input to the power supply line. The second potential is higher than the first potential.

Optical disc apparatus

An optical disc apparatus comprising: a spindle motor configured to drive a turntable on which an optical disc is loaded to rotate; a first substrate on which a first support member rotatably supporting a rotation shaft of the spindle motor is fixed, and on which a second support member is formed at a position adjacent to the spindle motor; a second substrate; an optical pickup device; and a guide member configured to guide the optical pickup device in a radial direction of the optical disc loaded on the turntable, one end of the guide member being supported by the second support member on the first substrate and fixed to a fixing member on the second substrate, and the other end of the guide member being fixed to the fixing member on the second substrate.

Display apparatus and electronic device including the same

There is provided a display apparatus including a display panel where display elements connected to a scanning line and a signal line are arrayed in a two dimensional matrix, and a driving circuit unit configured to drive the display panel, the driving circuit unit including a gate driver configured to feed a scanning signal to the scanning line such that a back gate voltage of a field effect transistor configuring an output buffer for generating the scanning signal is capable of controlling. Also, there is provided an electronic device including the display apparatus.

Plasma film forming method and plasma film forming apparatus

Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.

Paper sheet supply apparatus

A paper money supply unit has a backup plate which presses paper money input to a first input unit to a pickup roller, and a support plate which supports a paper money additionally input to a second input unit. When the paper money additionally input to the second input unit is moved to the first input unit and joined with the paper money, the support plate supports the paper money by a pressing force in the direction reverse to a pressing force by the operator.

Solid-state image sensor

A solid-state image sensor including an effective pixel portion in which a plurality of pixels including photodiodes formed on a semiconductor substrate are arranged, and a peripheral portion arranged around the effective pixel portion, includes a plurality of metal wiring layers arranged above the semiconductor substrate, and a planarizing film covering a patterned metal wiring layer that is a top layer among the plurality of metal wiring layers, wherein in the effective pixel portion, the plurality of metal wiring layers have openings configured to guide light to the photodiodes, and in the peripheral portion, an opening is provided in the top layer, and at least one metal wiring layer between the top layer and the semiconductor substrate has a pattern which blocks light incident on the photodiodes via the opening in the top layer.

Digital analog conversion circuit, data driver, display device, electronic apparatus and driving method of digital analog conversion circuit, driving method of data driver, and driving method of display device

A digital to analog conversion circuit is disclosed. In one example, the conversion circuit includes a selector unit and a differential amplifier. The selector unit includes a selector unit that selects nodes from a voltage dividing circuit based upon bit information of a higher order side of an input digital signal and outputs voltages of the selected nodes. The differential amplifier includes differential pairs to which the output voltages of the selector unit are input. When a voltage corresponding to the digital signal is output, after a correspondence relationship between the output voltages of the selector unit and the inputs of the respective differential pairs of the differential amplifier is allowed to have a short settling time, and is then controlled in accordance with the bit information of the lower order side of the input digital signal.

Semiconductor device and driving method thereof

A semiconductor device includes a photodiode, a first transistor, a second transistor, and a third transistor. The second transistor and the third transistor have a function of retaining a charge accumulated in a gate of the first transistor. In a period during which the second transistor and the third transistor are off, a voltage level of a voltage applied to a gate of the second transistor is set to be lower than a voltage level of a source of the second transistor and a voltage level of a drain of the second transistor, and a voltage level of a voltage applied to a gate of the third transistor is set to be lower than a voltage level of a source of the third transistor and a voltage level of a drain of the third transistor.

ELECTRONIC DEVICE AND CONTROL METHOD OF ELECTRONIC DEVICE

An appropriate light emission frequency is set in an electronic device that determines a phase difference between radiation light and reflected light. The electronic device includes a light emission unit, a determination unit, and a setting unit. The light emission unit radiates intermittent light in synchronization with a synchronization signal at a set frequency that is set. The light reception unit generates received light data by receiving reflected light of the intermittent light. The determination unit determines presence or absence of a predetermined object on the basis of the received light data. The setting unit sets, in the light emission unit, as the set frequency, a frequency that is higher, the smaller the distance to the predetermined object, in a case where presence of the predetermined object is determined.

Process for the production of semiconductor device

It is an object of the present invention to provide a process for a fluorine containing carbon film (a CF film), which can put an interlayer insulator film of a fluorine containing carbon film into practice. A conductive film, e.g., a TiN film 41, is formed on a CF film 4. After a pattern of a resist film 42 is formed thereon, the TiN film 41 is etched with, e.g., BCl3 gas. Thereafter, when the surface of the wafer is irradiated with O2 plasma, the CF film is chemically etched, and the resist film 42 is also etched. However, since the TiN film 41 functions as a mask, a predetermined hole can be formed. Although an interconnection layer of aluminum or the like is formed on the surface of the CF film 4, the TiN film 41 functions as an adhesion layer for adhering the interconnection layer to the CF film 4 and serves as a part of the interconnection layer. As the mask, an insulator film of SiO2 or the like may be substituted for the film.

Vehicle and driving system for vehicle installation

On condition that output of a torque of not lower than a preset reference torque from a motor continues for at least a predetermined time period in a vehicle stop state with output of a corresponding torque from the a second motor based on a detected accelerator opening, a torque command of the second motor is set to decrease the output torque of said motor by a torque decrease rate, which is set according to the corresponding torque and the accelerator opening in the vehicle stop state (initial accelerator opening). After a changeover of a current crowding phase in the second motor, the torque command of said motor is set to increase the output torque of said motor by a torque increase rate, which is set according to the accelerator opening in the vehicle stop state.

Semiconductor device and driving method thereof

To provide a semiconductor device in which power consumption can be reduced and operation delay due to a stop and a restart of supply of power supply voltage can be suppressed and a driving method thereof. A potential corresponding to data held in a period during which power supply voltage is continuously supplied is saved to a node connected to a capacitor before the supply of power supply voltage is stopped. By utilizing change of channel resistance of a transistor whose gate is the node, data is loaded when the supply of power supply voltage is restarted.

PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MAKING THE SAME

A photoelectric conversion device includes a semiconductor substrate, a first insulating film on the semiconductor substrate, a second insulating film on the first insulating film, a third insulating film on the second insulating film, and a wiring disposed in the third insulating film, the wiring being a wiring layer closest to the semiconductor substrate. A first plug of a shared contact structure and a second plug are disposed in the first insulating film. A third plug and a first wiring that constitute a dual damascene structure are disposed in the second and third insulating films. The first insulating film is used as an etching stopper film during etching of the second insulating film and the second insulating film is used as an etching stopper film during etching of the third insulating film.

SWASH PLATE TYPE COMPRESSOR

A swash plate includes a boss, which is mounted on the drive shaft, and a plate portion, which extends from the boss to be inclined with respect to the drive shaft. A rotary valve includes a suction passage, which sequentially connects cylinder bores in a suction stroke via an associated guide passage. An introduction guide communicates with the shaft bore to introduce the refrigerant gas in the swash plate chamber to the rotary valve. The introduction guide faces the boss and extends in the radial direction from the shaft bore beyond the boss. Therefore, suction efficiency of refrigerant gas from the swash plate chamber to the cylinder bore has improved.

IMAGE SENSOR, ELECTRONIC DEVICE, CONTROL DEVICE, CONTROL METHOD, AND PROGRAM

The present technology relates to an image sensor capable of achieving both higher S/N and higher frame rate, an electronic device, a control device, a control method, and a program. 1. An image sensor comprising:an AD converter having a comparator in which differential pairs having a plurality of transistors as first transistors and second transistors paired to configure the differential pairs are provided at an input stage, for performing analog to digital (AD) conversion on an electric signal by comparing a level-changing reference signal with the electric signal output by a shooting unit for performing photoelectric conversion and outputting the electric signal; anda control unit for performing control such that a transistor to be operated is selected as active transistor from among the transistors depending on the amount of light incident in the shooting unit, and the active transistor is operated.2. The image sensor according to claim 1 ,wherein the control unit selects the active transistor such that as the amount of light is smaller, a variation of a threshold voltage of the first and second transistors is smaller, and as the amount of light is larger, a time constant of the first and second transistors is lower.3. The image sensor according to claim 1 ,wherein the control unit selects a smaller number of transistors as the active transistors as the amount of light is larger.4. The image sensor according to claim 1 ,wherein the transistors include transistors with different gate oxide film thicknesses.5. The image sensor according to claim 4 ,wherein the control unit selects, as the active transistor, a transistor with a larger oxide film thickness as the amount of light is larger.6. The image sensor according to claim 4 ,wherein the transistors include two or more transistors with a predetermined oxide film thickness.7. An electronic device comprising:an optical system for focusing light; andan image sensor for receiving a light and shooting an image, ...

Medium transport device and recording device

In a medium transport device, when a unit body is inserted into an installation unit and an opening and closing body is closed with respect to the device main body, the unit body is positioned in a position that configures a portion of a transport pathway as a result of the opening and closing body pressing first target pressing units that are provided in the unit body.

MULTIFUNCTION MACHINE, MAINTENANCE METHOD OF MULTIFUNCTION MACHINE, AND MANUFACTURING METHOD OF MULTIFUNCTION MACHINE

A main body frame of a multifunction machine has first and second frames of which surfaces parallel to a Z-axis face each other. A recording head is disposed between the first and the second frames and fixed to the main body frame. An ejection tray is fixed to the main body frame on a +Z direction with respect to the recording head. A scanner is fixed to the main body frame on the +Z direction with respect to the ejection tray and forms an ejection space with the ejection tray. The recording head performs recording on a medium which is being transported toward a first direction, which is an in-plane direction of the first frame. The ejection tray is configured to be removed toward a second direction, which is the in-plane direction of the first frame, in a state where the scanner is fixed to the main body frame.

Semiconductor device

To provide a semiconductor memory device which can be manufactured with high yield and which can achieve higher integration. A pair of memory cells adjacent to each other in the bit line direction is connected to a bit line through a common contact hole. The pair of memory cells adjacent to each other in the bit line direction shares an electrode connected to the bit line. An oxide semiconductor layer included in the memory cell is provided to overlap with a word line and a capacitor line. A transistor and a capacitor included in the memory cell are each provided to overlap with the bit line connected to the memory cell.

Apparatus for controlling air-fuel ratio of internal-combustion engine

An apparatus for controlling an air-fuel ratio of an internal-combustion engine includes an air-fuel ratio detector, a fluctuation signal generating device, an air-fuel ratio fluctuation device, a 0.5th-order frequency component strength calculator, a fluctuation frequency component strength calculator, a reference component strength calculator, and an imbalance fault determining device. The reference component strength calculator is configured to calculate strength of a reference component in accordance with strength of a first frequency component and strength of a second frequency component. The imbalance fault determining device is configured to make a determination of an imbalance fault in which air-fuel ratios of a plurality of cylinders vary beyond a tolerance limit on a basis of a relative relationship between strength of the 0.5th-order frequency component and the strength of the reference component.

Semiconductor device, method for driving the same, and electronic appliance

A semiconductor device that suppresses operation delay due to stop and restart of the supply of a power supply potential is provided. A potential corresponding to data held while power supply potential is continuously supplied is backed up in a node connected to a capacitor while the supply of the power supply potential is stopped. Then, by utilizing change in resistance of a channel in a transistor whose gate is the node, the data is restored with restart of the supply of the power supply potential. Note that by supplying a high potential to the node before the data back up, high-speed and accurate data back up is possible.

Electronic device

An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire.

Procédé pour former un film de semiconducteur polycristallin sur un substrat isolant

L'invention concerne un procédé pour former un film de semiconducteur polycristallin de haute qualité sur un substrat isolant. Il consiste à utiliser un appareil CVD par plasma hyperfréquence comprenant une chambre 701 de génération de plasma munie d'un moyen 703 d'introduction de micro-ondes, et une chambre 702 de formation de film reliée par une électrode de grille à la chambre de génération de plasma. Un plasma 707 est produit par mise en contact d'un gaz de matière brute de formation de film avec l'énergie de micro-ondes et ce plasma est introduit dans la chambre de formation de film en même temps qu'une tension à haute fréquence est appliquée entre l'électrode de grille et le substrat isolant 713. Domaine d'application : production de films en semiconducteur polycristallin, notamment pour transistors à couches minces, etc.

Vehicle, Driving Device And Control Method Thereof

When a gear of a transmission for transmitting torque of a motor to a drive shaft is shifted while an accelerator is off or an accelerator pedal is slightly stepped on, an upper limit rotation speed is set using a fluctuation rate of a value smaller than a value when the gear is not shifted, a target rotation speed of an engine is set using this upper limit rotation speed, and control is carried out so that an engine is operated at the target rotation speed. By this arrangement, when the accelerator pedal is stepped on and a large torque demand is demanded, rise of the engine rotation speed is restricted, a portion used for raising the rotation speed in power outputted from the engine is made smaller, and a larger power can be outputted to the drive shaft.

Method for forming film by plasma

In a case where a CF film is used as an interlayer dielectric file for a semiconductor device, when a wiring of tungsten is formed, the CF film is heated to a temperature of, e g., about 400 to 450° C. At this time, F containing gases are emitted from the CF film, so that there are various disadvantages due to the corrosion of the wiring and the decrease of film thickness. In order to prevent this, it is required to enhance thermostability.A compound gas of C and F, e.g., C4F8 gas, a hydrocarbon gas, e.g., C2H4 gas, and CO gas are used as thin film deposition gases. These gases are activated to deposit a CF film on a semiconductor wafer 10 at a process temperature of 400° C. using active species thereof. Since the number of diamond-like bonds are greater than the number of graphite-like bonds by the addition of CO gas, the bonds are strengthened and difficult to be cut even at a high temperature, so that thermostability is enhanced.

Resin container

There is provided a resin container including an upper surface portion, a side surface portion connected to the upper surface portion, and a bottom surface portion disposed on a side opposite to the upper surface portion and connected to the side surface portion. A round corner surface portion is formed to the side surface portion. A first folding deformation inducing portion is formed on the round corner surface portion. When the container is viewed from a side surface portion side such that a central axis of the container and the round corner surface portion overlap with each other, the first folding deformation inducing portion is oblique with respect to the central axis.

Electronic device

An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire.

Method for producing polyethylene-based resin extruded foam sheet, polyethylene-based resin extruded foam sheet, and plate interleaf sheet using the same for glass sheets

Provided is a method for producing a polyethylene-based resin extruded foam sheet by extruding and foaming a foamable molten resin composition formed by kneading a mixture containing a low-density polyethylene, a physical blowing agent, and an antistatic agent, wherein the foam sheet has a thickness in a range of from 0.05 to 0.5 mm, and the antistatic agent is a polymeric antistatic agent having a melting point whose different from the melting point of the low-density polyethylene is in a range of from −10 to +10° C., and having a melt flow rate of 10 g/10 min or more. This method enables a novel polyethylene-based resin extruded foam sheet to be obtained that is of high quality such that formation of a small hole or a through-hole has been reduced or eliminated, and has both excellent strength and a shock-absorbing property despite a very small thickness even in medium- or long-term continuous production, and besides, exhibits a sufficient antistatic property, thus suitable as a glass ...

STOP CONTROL SYSTEM AND METHOD FOR INTERNAL COMBUSTION ENGINE

To provide a stop control system for an internal combustion engine, which is capable of accurately stopping a piston at a predetermined position while compensating for variation in the stop characteristic of the piston and aging thereof. The stop control system for the engine according the present invention controls a throttle valve toward an open side when an engine speed NE becomes lower than a stop control start rotational speed NEIGOFTH after the engine is stopped (step ), whereby a final compression stroke rotational speed NEPRSFTGT is controlled to a predetermined reference value NENPFLMTO, to thereby control the stop position of the piston to a predetermined position. Further, the correlation between the stop control start rotational speed NEIGOFTH and the final compression stroke rotational speed NEPRSFTGT is determined (step , FIG. ), and based on the determined correlation, a target stop control start rotational speed NEICOFREFX is calculate and learned (step ), for use in the stop control. 1. A stop control system for an internal combustion engine , which controls a stop position of a piston of the engine to a predetermined position during stoppage of the engine by controlling an intake air amount , comprising:an intake air amount-adjusting valve for adjusting the intake air amount;rotational speed-detecting means for detecting a rotational speed of the engine;intake air amount control means for controlling said intake air amount-adjusting valve toward a closed side when a command for stopping the engine is issued, and thereafter when the detected rotational speed of the engine becomes lower than a stop control start rotational speed, controlling said intake air amount-adjusting valve toward an open side;final compression stroke rotational speed-obtaining means for obtaining the rotational speed of the engine in a final compression stroke immediately before the engine is stopped, as a final compression stroke rotational speed;correlation determining means ...

IMAGE SENSOR, ELECTRONIC DEVICE, CONTROL DEVICE, CONTROL METHOD, AND PROGRAM

The present technology relates to an image sensor capable of achieving both higher S/N and higher frame rate, an electronic device, a control device, a control method, and a program. 1. An imaging device comprising:a first pixel configured to receive incident light and output a first pixel signal;a signal line coupled to the first pixel;a reference signal generator configured to generate a reference signal; anda comparator coupled to the signal line and the reference signal generator, wherein the comparator comprises a first circuit comprising:a first transistor, a gate of the first transistor coupled to the signal line via first switch circuitry;a second transistor, a gate of the second transistor coupled to the signal line via the first switch circuitry;a third transistor, a gate of the third transistor coupled to the reference signal generator via second switch circuitry; anda fourth transistor, a gate of the fourth transistor coupled to the reference signal generator via the second switch circuitry.2. The imaging device according to claim 1 , wherein the first switch circuitry comprises a first switch circuit configured to couple the signal line to the first transistor.3. The imaging device according to claim 2 , wherein the first switch circuitry comprises a second switch circuit configured to couple the signal line to the second transistor.4. The imaging device according to claim 1 , wherein the second switch circuitry comprises a first switch circuit configured to couple the reference signal generator to the third transistor.5. The imaging device according to claim 4 , wherein the second switch circuitry comprises a second switch circuit configured to couple the reference signal generator to the fourth transistor.6. The imaging device according to claim 1 , wherein the first switch circuitry is configured to switch based on an amount of incident light.7. The imaging device according to claim 1 , wherein the second switch circuitry is configured to switch ...

Speaker unit, speaker system, and speaker diaphragm manufacturing method

The present invention provides a speaker unit comprising a diaphragm of 0.5 to 10 mm thick aromatic polycarbonate with a density of 0.03 to 0.6 g/cm3, and a mechanism for driving the diaphragm. The aromatic polycarbonate used for the diaphragm is preferably derived from bisphenol with a viscosity average molecular weight of 25,000 to 70,000. The invention further provides a speaker system comprising such a speaker unit attached to a cabinet and a method for manufacturing the speaker diaphragm.

Semiconductor device, electronic component, and electronic device

A semiconductor device has a function of storing data and includes an output terminal, a first terminal, a second terminal, a first circuit, and second circuits. The first circuit has a function of keeping the potential of the output terminal to be a high-level or low-level potential. The second circuits each include a first pass transistor and a second pass transistor which are electrically connected in series, a first memory circuit, and a second memory circuit. The first and second memory circuits each have a function of making a potential retention node in an electrically floating state. The potential retention nodes of the first and second memory circuits are electrically connected to gates of the first and second pass transistors, respectively. A transistor including an oxide semiconductor layer may be provided in the first and second memory circuits.

Semiconductor wafer, field-effect transistor, method of producing semiconductor wafer, and method of producing field-effect transistor

Provided is a semiconductor wafer including a base wafer, a first insulating layer, and a semiconductor layer. Here, the base wafer, the first insulating layer and the semiconductor layer are arranged in an order of the base wafer, the first insulating layer and the semiconductor layer, the first insulating layer is made of an amorphous metal oxide or an amorphous metal nitride, the semiconductor layer includes a first crystal layer and a second crystal layer, the first crystal layer and the second crystal layer are arranged in an order of the first crystal layer and the second crystal layer in such a manner that the first crystal layer is positioned closer to the base wafer, and the electron affinity Ea1 of the first crystal layer is larger than the electron affinity Ea2 of the second crystal layer.

Slot machine including a plurality of video reel strips

Provided is a slot machine capable of reducing unfairness which may result between a player who has made an investment and a player who has not made an investment and allowing a player to proceed with a game by making an investment in expectation of a jackpot at ease. Each money amount which is constant is accumulated independently of a number of bets each time betting is conducted, and upon winning a jackpot, a money amount calculated by multiplying a money amount accumulated until then by a multiplying factor based on the number of bets is provided.

Semiconductor device

A semiconductor device that can operate normally with lower power consumption is provided. The semiconductor device includes a pair of first circuits which each include a first transistor and a second transistor capable of controlling the supply of a first signal to a gate of the first transistor, and a second circuit which is capable of generating a second signal which is to be supplied to a gate of the second transistor and which has a larger amplitude than the first signal. One of a source and a drain of one of the first transistors included in the pair of first circuits is electrically connected to one of a source and a drain of the other of the first transistors. The first signals supplied to the gates of the first transistors in the pair of first circuits have potentials with different logic levels.

Semiconductor device and manufacturing method thereof

In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.

Network server load detection system, sharing system and method

In order to measure the load on a server and perform its allotment with high efficiency, the communication from a client to a server is monitored. The communication data size per connection is measured as the load on the server, the change of the communication data size per connection is detected, the maximum is recorded, and if the communication data size decreases at the time when the maximum is detected, the load on the server is judged to be heavy.

DISPLAY APPARATUS AND ELECTRONIC DEVICE INCLUDING THE SAME

There is provided a display apparatus including a display panel where display elements connected to a scanning line and a signal line are arrayed in a two dimensional matrix, and a driving circuit unit configured to drive the display panel, the driving circuit unit including a gate driver configured to feed a scanning signal to the scanning line such that a back gate voltage of a field effect transistor configuring an output buffer for generating the scanning signal is capable of controlling. Also, there is provided an electronic device including the display apparatus.

Semiconductor device

To provide a semiconductor memory device which can be manufactured with high yield and which can achieve higher integration. A pair of memory cells adjacent to each other in the bit line direction is connected to a bit line through a common contact hole. The pair of memory cells adjacent to each other in the bit line direction shares an electrode connected to the bit line. An oxide semiconductor layer included in the memory cell is provided to overlap with a word line and a capacitor line. A transistor and a capacitor included in the memory cell are each provided to overlap with the bit line connected to the memory cell.

Stop control system and method for internal combustion engine

A stop control system for an internal combustion engine, which is capable of accurately stopping a piston at a predetermined position during stoppage of the engine while preventing occurrence of untoward noise and vibration. After stopping the engine 3, the stop control system 1 for the engine 3 according to the present invention executes a first stage control (step 34) in which a throttle valve 13a is controlled to a first stage control target opening degree ICMDOFPRE smaller than a second predetermined opening degree ICMDOF2, in order to stop the piston at the predetermined position, before executing a second stage control (step 42) in which the throttle valve 13a is controlled to the second predetermined opening degree ICMDOF2. Further, the stop control system 1 stabilizes initial conditions at the start of the second stage control by setting a first stage control start rotational speed NEICOFPRE and a first stage control target opening degree ICMDOFPRE according to a change in a corrected ...

VEHICLE DRIVING APPARATUS, AND CONTROL METHODS THEREOF

When the change speed is instructed, without changing value of a suppressing vibration flag set to value 1 as initial value, a fast fill as the preparation of a brake to be engaged when the change speed is executed and low pressure standby of hydraulic pressure to set the brake in a half-engaged state. Then the suppressing vibration flag is set to value 0 when a predetermined time passed since the change speed is instructed, a sum of a drive torque required for driving and a suppressing vibration torque, which is in the same direction as suppressing rotational fluctuation of a drive shaft, is output from a motor when the suppressing vibration flag is set to value 1.

Semiconductor device and method for operating semiconductor device

A novel comparison circuit, a novel amplifier circuit, a novel battery control circuit, a novel battery protection circuit, a power storage device, a semiconductor device, an electric device, and the like are provided. In a semiconductor device, one of a source and a drain of a first transistor is electrically connected to one of a source and a drain of a second transistor and one of a source and a drain of a third transistor; the other of the source and the drain of the third transistor is electrically connected to a first output terminal; and the other of the source and the drain of the second transistor is electrically connected to a second output terminal. The semiconductor device has a function of outputting a comparison result of a signal supplied to a gate of the second transistor and a signal supplied to a gate of the third transistor, from the first output terminal and the second output terminal; and a function of changing the potential output from the first output terminal in ...

LIQUID DISCHARGE HEAD SUBSTRATE, LIQUID DISCHARGE HEAD, LIQUID DISCHARGE APPARATUS, METHOD FOR FORMING CONDUCTIVE LAYER, AND METHOD FOR MANUFACTURING LIQUID DISCHARGE HEAD SUBSTRATE

One embodiment relates to a liquid discharge head substrate including at least one heat generating resistive element, a first insulating layer covering the heat generating resistive element, a conductive layer disposed on the first insulating layer and overlapping the heat generating resistive element with the first insulating layer interposed therebetween in a plan view with respect to an upper surface of the heat generating resistive element, and a second insulating layer covering an edge of the conductive layer. The edge of the conductive layer has a tapered shape. 1. A liquid discharge head substrate comprising:at least one heat generating resistive element;a first insulating layer covering the heat generating resistive element;a conductive layer disposed on the first insulating layer and overlapping the heat generating resistive element with the first insulating layer interposed therebetween in a plan view with respect to an upper surface of the heat generating resistive element; anda second insulating layer covering an edge of the conductive layer,wherein in a cross-section passing through the heat generating resistive element, the second insulating layer, and the conductive layer, the angle formed by a side surface of the edge of the conductive layer and a bottom surface of the conductive layer is an acute angle.2. The liquid discharge head substrate according to claim 1 , wherein the conductive layer includes an iridium layer.3. The liquid discharge head substrate according to claim 1 , wherein the conductive layer includes an iridium layer and a first tantalum layer disposed on the iridium layer.4. The liquid discharge head substrate according to claim 3 , wherein the first tantalum layer has an opening in a region that overlaps with the heat generating resistive element in the plan view.5. The liquid discharge head substrate according to claim 3 ,wherein the conductive layer has a second tantalum layer, andwherein the iridium layer is disposed on the ...

Fluid Blocker for an Intake Manifold

An intake manifold is disclosed. The intake manifold includes a first chamber in fluid communication with a PCV line and disposed generally upstream of a second chamber. The chambers are designed to provide a long flow path for the moisture laden PCV gas and to help reduce the introduction of moisture or fluids into the second chamber. This helps to prevent the ingestion of moisture or fluids by the combustion chambers of engine. An optional fluid blocker can also be used to trap fluids and help prevent those fluids from entering a cylinder port.

PROGRAMMABLE LOGIC DEVICE AND SEMICONDUCTOR DEVICE

To provide a PLD having a reduced circuit area and an increased operation speed. In the circuit structure, a gate of a transistor provided between an input terminal and an output terminal of a programmable switch element is in an electrically floating state in a period when a signal is input to the programmable switch element. The structure enables the voltage of a gate to be increased by a boosting effect in response to a signal supplied from programmable logic elements, suppressing a reduction in amplitude voltage. This can reduce a circuit area by a region occupied by a booster circuit such as a pull-up circuit and increase operation speed. 1. A programmable logic device comprising: an input terminal;', 'an output terminal;', 'a first transistor;', 'a second transistor;', 'a third transistor; and', 'a fourth transistor,, 'a programmable switch element comprisingwherein a first terminal of the first transistor is electrically connected to a gate of the second transistor,wherein a first terminal of the second transistor is electrically connected to the input terminal,wherein a second terminal of the second transistor and a first terminal of the fourth transistor are electrically connected to each other,wherein a first terminal of the third transistor is electrically connected to a gate of the fourth transistor, andwherein a second terminal of the fourth transistor is electrically connected to the output terminal.2. The programmable logic device according to claim 1 ,wherein the first transistor comprises a channel formation region comprising an oxide semiconductor, andwherein the third transistor comprises a channel formation region comprising an oxide semiconductor.3. The programmable logic device according to claim 2 ,wherein the oxide semiconductor of the channel formation region of the first transistor comprises In, Ga, and Zn, andwherein the oxide semiconductor of the channel formation region of the third transistor comprises In, Ga, and Zn.4. The programmable ...

Automobile and/or replica thereof

Communications network control system

A communications network control system includes a packet judging circuit 412 for judging whether a variable-length packet inputted via a network 12 is a control packet CPKT self-addressed and containing control information for network control, or a transfer packet TPKT that should be transferred to other addresses, and a control information management circuit 512 for receiving the control packet judged to be the control packet by the judging circuit via the network, and managing and processing the control information, based on the received control packet. This system further includes a routing table management circuit 413 for storing the control information transmitted to the network from the management circuit in such a way that the control information can be updated as well as for controlling a transfer of the transfer packet, and a packet rewriting circuit 414 for executing a process of rewriting contents of the transfer packet in accordance with the control information stored in the ...

Semiconductor device, electronic component, and electronic device

A semiconductor device suitable for low-voltage driving. The semiconductor device includes a first transistor, a second transistor, a power supply line, a circuit, and a memory circuit. The first transistor controls electrical continuity between the circuit and the power supply line. The memory circuit stores data for setting a gate potential of the first transistor. The second transistor controls electrical continuity between an output node of the memory circuit and a gate of the first transistor. The second transistor is a transistor with an ultralow off-state current, for example, an oxide semiconductor transistor. In a period for operating the circuit, a first potential is input to the power supply line and the second transistor is turned off. In a period for updating the gate potential of the first transistor, a second potential is input to the power supply line. The second potential is higher than the first potential.

Semiconductor device and manufacturing method thereof

In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.

PROGRAMMABLE LOGIC DEVICE

Data of a register in a programmable logic element is retained. A volatile storage circuit and a nonvolatile storage circuit are provided in a register of a programmable logic element whose function can be changed in response to a plurality of context signals. The nonvolatile storage circuit includes nonvolatile storage portions for storing data in the register. The number of nonvolatile storage portions corresponds to the number of context signals. With such a structure, the function can be changed each time context signals are switched and data in the register that is changed when the function is changed can be backed up to the nonvolatile storage portion in each function. In addition, the function can be changed each time context signals are switched and the data in the register that is backed up when the function is changed can be recovered to the volatile storage circuit.

VEHICLE AND DRIVING SYSTEM FOR VEHICLE INSTALLATION

On condition that output of a torque of not lower than a preset reference torque from a motor continues for at least a predetermined time period in a vehicle stop state with output of a corresponding torque from the a second motor based on a detected accelerator opening, a torque command of the second motor is set to decrease the output torque of said motor by a torque decrease rate, which is set according to the corresponding torque and the accelerator opening in the vehicle stop state (initial accelerator opening). After a changeover of a current crowding phase in the second motor, the torque command of said motor is set to increase the output torque of said motor by a torque increase rate, which is set according to the accelerator opening in the vehicle stop state.

Extruded polyethylene-based resin foam sheet and interleaf sheet for glass plates

An extruded foam sheet having a foam layer constituted of a base resin containing low density polyethylene as a major component thereof, wherein the foam sheet has an apparent density of 45 to 450 kg/m3, an average thickness of 0.03 mm or more and less than 0.3 mm and a dimensional change of −5% to 0% in the extrusion direction when heated at 80° C. for 24 hours and wherein cell walls of the foam layer have an average thickness of 6 to 70 μm. The foam sheet may be used as an interleaf sheet for glass plates.

IMAGING DEVICE, VIDEO RETRIEVING METHOD, VIDEO RETRIEVING PROGRAM, AND INFORMATION COLLECTING DEVICE

A drive recorder according to an embodiment of the present disclosure includes: an imaging unit that is mounted on a vehicle and captures a video of the surroundings of the vehicle; a video recording unit that has, recorded therein, video data captured; a network connecting unit that receives accident information including a time and date when an accident occurred and a place where the accident occurred; and a video retrieving unit that determines whether any video data captured in a predetermined time period and in a predetermined region are available in the video data recorded in the video recording unit, the predetermined time period including the time and date when the accident occurred, the predetermined region including the place where the accident occurred. 1. An imaging device , comprising:an imaging unit that captures video data;a video recording unit that has, recorded therein, the video data captured;an event information receiving unit that receives event information including a time and date when a predetermined event occurred and a place where the predetermined event occurred; anda video retrieving unit that determines whether any video data captured in a predetermined time period and in a predetermined region are available in the video data recorded in the video recording unit, the predetermined time period including the time and date of occurrence, the predetermined region including the place of occurrence.2. The imaging device according to claim 1 , wherein when the video retrieving unit determines that no video data captured in the predetermined time period and in the predetermined region are available in the video data recorded in the video recording unit claim 1 , the predetermined time period including the time and date of occurrence claim 1 , the predetermined region including the place of occurrence claim 1 , the video recording unit determines whether any video data captured in a predetermined time band and in a predetermined region are ...

Solid state image sensor and method for manufacturing the same

A method of manufacturing a solid state image sensor is provided. The method includes forming electrically conductive layer and an interlayer insulation film above a first region and a second region, performing an annealing process after forming the conductive layer and the interlayer insulation film, and forming a protective film above the interlayer insulation film and the electrically conductive layer. The electrically conductive layer includes a light shielding layer arranged above the second region. The interlayer insulation film includes a first portion located above the first region and a second portion located above the second region and below the light shielding layer. Before performing the annealing process, an average hydrogen concentration of the second portion is higher than an average hydrogen concentration of the first portion.

Semiconductor wafer, method of producing semiconductor wafer and electronic device

To provide a semiconductor wafer having a wafer, a compound semiconductor layer, a first insulating layer and a second insulating layer, wherein in the depth direction, oxygen atoms and nitrogen atoms are continuously distributed, the number of the nitrogen atoms along the depth direction shows its maximum in the first insulating layer, the total number of third atoms and fourth atoms along the depth direction becomes the largest in the compound semiconductor layer, the number of the oxygen atoms at the interface between the compound semiconductor layer and the first insulating layer is smaller than the number of the oxygen atoms at the interface between the first insulating layer and the second insulating layer.

Liquid discharge head substrate, liquid discharge head, and liquid discharge apparatus

A liquid discharge head substrate comprising a liquid discharge element arranged above a surface of a substrate, an insulator arranged between the surface and the liquid discharge element, a liquid supply port extending through the insulator, first and second conductive patterns is provided. The first pattern connects an element arranged on the surface and the liquid discharge element. The second pattern surrounds the liquid supply port. The insulator includes first and second films that are bonded at a bonding surface along the surface. A first member arranged in the first film and a second member arranged in the second film, of the first pattern, are bonded at the bonding surface. A third member arranged in the first film and a fourth member arranged in the second film, of the second pattern, are bonded at the bonding surface.

DEVELOPMENT CARTRIDGE, DEVELOPMENT UNIT, AND IMAGE FORMING APPARATUS

A development cartridge includes: a developer carrier which carries toner; a toner supply member which supplies the toner to the developer carrier; a regulation member which regulates an amount of toner on the developer carrier; a development chamber which has the developer carrier and the toner supply member; a transport section which is connected to an upper portion and a lower portion of the development chamber to transport the toner from the lower portion of the development chamber to the upper portion of the development chamber; a transport member which is disposed inside the transport section and transports the toner while agitating the toner; an input member which inputs a print image; and a control member which controls a toner transport speed of the transport member in accordance with the print image.

STOP CONTROL SYSTEM AND METHOD FOR INTERNAL COMBUSTION ENGINE

A stop control system for an internal combustion engine, which is capable of accurately stopping a piston at a predetermined position during stoppage of the engine while preventing occurrence of untoward noise and vibration. After stopping the engine 3, the stop control system 1 for the engine 3 according to the present invention executes a first stage control (step 34) in which a throttle valve 13a is controlled to a first stage control target opening degree ICMDOFPRE smaller than a second predetermined opening degree ICMDOF2, in order to stop the piston at the predetermined position, before executing a second stage control (step 42) in which the throttle valve 13a is controlled to the second predetermined opening degree ICMDOF2. Further, the stop control system 1 stabilizes initial conditions at the start of the second stage control by setting a first stage control start rotational speed NEICOFPRE and a first stage control target opening degree ICMDOFPRE according to a change in a corrected ...

Double-headed piston type compressor

In a double-headed piston type compressor provided with a rotary valve in a rotary shaft, the rotary valve has an introducing port for introducing refrigerant from a suction-pressure region through a supply passage and a respective suction port into a compression chamber. A shaft seal between a front housing and the rotary shaft for preventing leakage of refrigerant along a peripheral surface of the rotary shaft is accommodated in a shaft seal chamber formed in the front housing. A communication passage connects the shaft seal chamber to the cam chamber. A communication groove is formed in an outer peripheral surface of the rotary shaft that forms the rotary valve adjacent to the front housing for communication between the introducing port and the shaft seal chamber. The supply passage and the cam chamber are in communication through the communication groove, the shaft seal chamber and the communication passage.

SEMICONDUCTOR DEVICE

A semiconductor device that can operate normally with lower power consumption is provided. The semiconductor device includes a pair of first circuits which each include a first transistor and a second transistor capable of controlling the supply of a first signal to a gate of the first transistor, and a second circuit which is capable of generating a second signal which is to be supplied to a gate of the second transistor and which has a larger amplitude than the first signal. One of a source and a drain of one of the first transistors included in the pair of first circuits is electrically connected to one of a source and a drain of the other of the first transistors. The first signals supplied to the gates of the first transistors in the pair of first circuits have potentials with different logic levels. 1. A semiconductor device comprising:a first transistor; anda second transistor,wherein a first signal is supplied to a gate of the second transistor,wherein a second signal is supplied to one of a source and a drain of the second transistor,wherein a gate of the first transistor is electrically connected to another of the source and the drain of the second transistor,wherein the first signal comprises a pulse signal, andwherein an amplitude of the pulse signal is larger than an amplitude of the second signal.2. The semiconductor device according to claim 1 , further comprising a circuit configured to generate the first signal.3. The semiconductor device according to claim 1 , wherein a high-level potential of the pulse signal is higher than a high-level potential of the second signal.4. The semiconductor device according to claim 1 , wherein a low-level potential of the pulse signal is lower than a low-level potential of the second signal.5. The semiconductor device according to claim 1 , wherein the second transistor comprises a channel formation region in an oxide semiconductor film.6. The semiconductor device according to claim 5 , wherein the oxide ...

Spondylo-amalgamation implant

PHOTOELECTRIC CONVERSION DEVICE, IMAGE PICKUP SYSTEM, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE

A photoelectric conversion device has an insulator film disposed on a silicon layer having a photoelectric conversion region, the insulator film having a portion overlapped with the photoelectric conversion region, a silicon oxide film disposed on the insulator film, the silicon oxide film having a portion overlapped with the photoelectric conversion region, an electroconductive member disposed between the insulator film and the silicon oxide film, and a silicon oxide layer disposed between the electroconductive member and the silicon oxide film, in which the portion overlapped with the photoelectric conversion region of the silicon oxide film is in contact with the portion overlapped with the photoelectric conversion region of the insulator film and the hydrogen concentration of the silicon oxide film is greater than the hydrogen concentration of the silicon oxide layer.

Connector, development cartridge, and image forming apparatus

The first invention comprises an impact receiving member (41); a first electric contact (43a, 44a) which is disposed on the front side of the impact receiving member; a memory IC substrate (46) which is disposed on and apart from the rear side of the impact receiving member; and a second electric contact (43b, 44b) which is configured by bringing a conductive member extending from the first electric contact into contact with a terminal of the memory IC substrate. The second invention comprises a plurality of contact members; a guide member(s) (42) which is formed with the contact members; an impact receiving member (41) being provided on one surface thereof with said guide member; and a contact protecting member (45) which is disposed on the other surface of the impact receiving member and encompasses a memory IC substrate. The third invention comprises conductive members (43, 44) having connecting terminals relative to an apparatus body-side connector and connecting terminals (43b, 44b ...

Image reading apparatus

During processing in an image reading apparatus, if the this-time pixel data Kn+1 is larger than the level value M, the value averaged by the averaging circuit 31 is not adopted, but an arrival value is adopted as it is. In the case where the this-time pixel data Kn+1 is not larger than the level value M, if the pixel data in which a differential value |Kn-Kn+1| of the last time pixel data Kn and the this-time pixel data Kn+1, calculated in the differential unit 32, is larger than the setting value L, arrives, an arrival value is adopted as it is, and if the pixel data in which a differential value |Kn-Kn+1| of the last time pixel data Kn and the this-time pixel data Kn+1, calculated in the differential unit 32, is not larger than the setting value L, arrives, the output of the averaging circuit 31 is adopted.

Semiconductor device and electronic device

A semiconductor device resistant to a high temperature with low power consumption is provided. The semiconductor device includes a first and a second circuit, a first and a second cell, and a first and a second wiring. The first cell includes a first transistor, and the second cell includes a second transistor. The first and the second transistor operate in a subthreshold region. The first cell is electrically connected to the first circuit through the first wiring, the first cell is electrically connected to the second circuit through the second wiring, and the second cell is electrically connected to the second circuit through the second wiring. The first cell sets a current flowing through the first transistor to a first current and the second cell sets a current flowing through the second transistor to a second current. At this time, a potential corresponding to the second current is input from the second wiring to the first cell. Then, a third current flows from the second circuit ...

Liquid ejecting apparatus

A printer, which is an example of a liquid ejecting apparatus, including a slide mechanism that has a first member and a second member configured to slide with each other in lifting and lowering directions; a head that is fixed to the first member and has a nozzle for ejecting a liquid; a lifting and lowering mechanism that is fixed to the second member, and lifts and lowers the head in the lifting and lowering directions; and a cap that covers the nozzle. The first member is configured of a wall member having an elongated hole, and the second member is configured of a pin. The lifting and lowering mechanism relatively moves the head toward the cap in a state where the head does not slide in a direction away from the cap.

Multi-layer foam sheet and interleaf sheet for glass plates

A multi-layer foam sheet with an apparent density of 30 to 300 kg/m3 and a thickness of 0.05 to 2 mm, including a foam layer containing a polyethylene-based resin (A), and an antistatic layer fusion-laminated by coextrusion on each of both sides of the foam layer. The antistatic layer has a basis weight of 1 to 10 g/m2 and contains a polyethylene-based resin (B), a polystyrene-based resin, a styrenic elastomer, and a polymeric antistatic agent, with the polystyrene-based resin being contained in the antistatic layer in an amount of 15 to 70% by weight.

Display device

A display device includes a pixel area including pixels arranged in a matrix and having a horizontal resolution of 350 ppi or more and a color filter layer overlapping with the pixel area. The pixels each include a first transistor whose gate is electrically connected to a scan line and whose one of a source and a drain is electrically connected to a signal line; a second transistor whose gate is electrically connected to the other of the source and the drain of the first transistor and whose one of a source and a drain is electrically connected to a current-supplying line; and a light-emitting element electrically connected to the other of the source and the drain of the second transistor. The first and second transistors each have a channel formation region including a single crystal semiconductor.

Image reading device

An image reading device includes: a first reading unit that is provided at an intermediate position of a transport path and that reads an image of a document transported on the transport path; and a transport unit that is disposed on the transport path further upstream than the first reading unit and that transports the document to the first reading unit. The transport unit includes a third driving roller and third driven rollers that hold the document between the third driving roller and the third driven rollers. The third driving roller is provided on a frame main body, and the third driven rollers are provided on a holder member. When a cover is displaced from a closed position to an open position, the holder member is moved so as to separate the third driven rollers from the third driving roller.

Semiconductor device and manufacturing method thereof

In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.

PROGRAMMABLE LOGIC DEVICE AND SEMICONDUCTOR DEVICE

A programmable logic device includes a plurality of programmable logic elements (PLE) whose electrical connection is controlled by first configuration data. Each of The PLEs includes an LUT in which a relationship between a logic level of an input signal and a logic level of an output signal is determined by second configuration data, an FF to which the output signal of the LUT is input, and an MUX. The MUX includes at least two switches each including first and second transistor. A signal including third configuration data is input to a gate of the second transistor through the first transistor. The output signal of the LUT or an output signal of the FF is input to one of a source and a drain of the second transistor. 1. A programmable logic device comprising:a plurality of programmable logic elements whose electrical connection is controlled by first configuration data, each of the programmable logic elements comprising:a look-up table in which a relationship between a logic level of an input signal and a logic level of an output signal is determined by second configuration data,a flip-flop to which the output signal of the look-up table is input, anda multiplexer,wherein the multiplexer includes at least two switches each including a first transistor and a second transistor,wherein a gate of the second transistor is configured to be supplied with a signal including third configuration data through the first transistor,wherein one of a source and a drain of the second transistor is configured to be supplied with the output signal of the look-up table or an output signal of the flip-flop, andwherein the other of the source and the drain of the second transistor included in one of the two switches is electrically connected to the other of the source and the drain of the second transistor included in the other of the two switches.2. The programmable logic device according to claim 1 ,the look-up table comprising a plurality of logic gates, each of the logic gates ...

Semiconductor device

A semiconductor device having a novel structure is provided. The semiconductor device includes a CPU and an accelerator. The accelerator includes a first memory circuit and an arithmetic circuit. The first memory circuit includes a first transistor. The first transistor includes a semiconductor layer containing a metal oxide in a channel formation region. The arithmetic circuit includes a second transistor. The second transistor includes a semiconductor layer containing silicon in a channel formation region. The first transistor and the second transistor are provided to be stacked. The CPU includes a CPU core including a flip-flop provided with a backup circuit. The backup circuit includes a third transistor. The third transistor includes a semiconductor layer containing a metal oxide in a channel formation region.

Photoelectric conversion device, image pickup system, and method for manufacturing photoelectric conversion device

A photoelectric conversion device has an insulator film disposed on a silicon layer having a photoelectric conversion region, the insulator film having a portion overlapped with the photoelectric conversion region, a silicon oxide film disposed on the insulator film, the silicon oxide film having a portion overlapped with the photoelectric conversion region, an electroconductive member disposed between the insulator film and the silicon oxide film, and a silicon oxide layer disposed between the electroconductive member and the silicon oxide film, in which the portion overlapped with the photoelectric conversion region of the silicon oxide film is in contact with the portion overlapped with the photoelectric conversion region of the insulator film and the hydrogen concentration of the silicon oxide film is greater than the hydrogen concentration of the silicon oxide layer.

POWER OUTPUT APPARATUS, CONTROL METHOD OF POWER OUTPUT APPARATUS, AND VEHICLE EQUIPPED WITH POWER OUTPUT APPARATUS

An object oil temperature is determined by adopting a gradual change process for an oil temperature of a cooling lubricant oil, which is used to lubricate and cool down a motor and a transmission constructed to cause an output power of the motor to be subjected to speed change and to be transmitted to a driveshaft. A load factor of the motor is subsequently set based on the set object oil temperature and a motor coil temperature. A motor torque command is set with the load factor, and the motor is then driven and controlled to ensure output of a torque equivalent to the set motor torque command. This arrangement drives and controls the motor with consideration of the oil temperature of the cooling lubricant oil and thus ensures more adequate actuation of the motor, compared with a conventional drive control without consideration of the oil temperature of the cooling lubricant oil.

Method for forming film by plasma

In a case where a CF film is used as an interlayer dielectric film for a semiconductor device, when a wiring of tungsten is formed, the CF film is heated to a temperature of, e.g., about 400 to 450° C. At this time, F containing gases are emitted from the CF film, so that there are various disadvantages due to the corrosion of the wiring and the decrease of film thickness. In order to prevent this, it is required to enhance thermostability. A compound gas of C and F, e.g., C4F8gas, a hydrocarbon gas, e.g., C2H4gas, and CO gas are used as thin film deposition gases. These gases are activated to deposit a CF film on a semiconductor wafer 10 at a process temperature of 400° C. using active species thereof. Since the number of diamond-like bonds are greater than the number of graphite-like bonds by the addition of CO gas, the bonds are strengthened and difficult to be cut even at a high temperature, so that thermostability is enhanced.

Semiconductor device and manufacturing method thereof

In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.

Semiconductor device and driving method thereof

A semiconductor device includes a photodiode, a first transistor, a second transistor, and a third transistor. The second transistor and the third transistor have a function of retaining a charge accumulated in a gate of the first transistor. In a period during which the second transistor and the third transistor are off, a voltage level of a voltage applied to a gate of the second transistor is set to be lower than a voltage level of a source of the second transistor and a voltage level of a drain of the second transistor, and a voltage level of a voltage applied to a gate of the third transistor is set to be lower than a voltage level of a source of the third transistor and a voltage level of a drain of the third transistor.

AIR-FUEL RATIO CONTROL SYSTEM FOR INTERNAL COMBUSTION ENGINE

An oscillation signal is generated to oscillate the air-fuel ratio with a set frequency which is different from a 0.5th-order frequency (half of the frequency corresponding to a rotational speed of the engine). Air-fuel ratio perturbation control is performed to oscillate the air-fuel ratio according to the oscillation signal. An intensity of the 0.5th-order frequency component and the set frequency component contained in the detected air-fuel ratio signal are calculated. A determination parameter applied to determining an imbalance degree of air-fuel ratios corresponding to the plurality of cylinders is calculated according to the two intensities and determines an imbalance failure that the imbalance degree of the air-fuel ratios exceeds an acceptable limit. A predicted imbalance value, indicative of a predicted value of the imbalance degree, is calculated, and an amplitude of the oscillation signal is set according to the predicted imbalance value. 1. An air-fuel ratio control system for an internal combustion engine having a plurality of cylinders , comprising:air-fuel ratio detecting means for detecting an air-fuel ratio in an exhaust passage of said engine;oscillation signal generating means for generating an oscillation signal to oscillate the air-fuel ratio with a set frequency which is different from a 0.5th-order frequency which is half of the frequency corresponding to a rotational speed of said engine;air-fuel ratio oscillating means for oscillating the air-fuel ratio according to the oscillation signal;0.5th-order frequency component intensity calculating means for calculating an intensity of the 0.5th-order frequency component contained in an output signal of said air-fuel ratio detecting means;set frequency component intensity calculating means for calculating an intensity of the set frequency component contained in the output signal of said air-fuel ratio detecting means during operation of said air-fuel ratio oscillating means;determination parameter ...

METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE

A method of manufacturing a photoelectric conversion device includes forming, with material containing aluminum, an electrically conductive pattern on a semiconductor substrate including a photoelectric converter, forming, on the electrically conductive pattern, an insulating film containing hydrogen, performing first annealing in a hydrogen-containing atmosphere, forming, on the insulating film, a protective film having lower hydrogen permeability than that of the insulating film after the first annealing, and performing second annealing in the hydrogen-containing atmosphere. Temperature in the first annealing is not less than temperature when forming the insulating film and not more than temperature when forming the protective film.

Electric motor drive control apparatus

An electric motor drive control apparatus includes a detection angle obtaining section that obtains the detection angle of the resolver; a correction information storage section that stores correction information for correcting the detection angle, in association with a modulation ratio that is a ratio of an effective value of a fundamental wave component of the AC voltage to the system voltage; and a detection angle correcting section that obtains the correction information from the correction information storage section, based on the modulation ratio at the time the detection angle obtaining section obtains the detection.

Method for driving photosensor, method for driving semiconductor device, semiconductor device, and electronic device

This invention has for purpose to provide a photosensor that is small in size and can obtain high-contrast image data and to provide a semiconductor device including the photosensor. In the photosensor including a light-receiving element, a transistor serving as a switching element, and a charge retention node electrically connected to the light-receiving element through the transistor, the reduction in charge held in the charge retention node is suppressed by extending the fall time of the input waveform of a driving pulse supplied to the transistor to turn off the transistor.

Display device and method of driving the same

A display device includes a display unit having display elements arrayed in rows and columns. The display elements each include a current-driven light emitting unit and a drive circuit for driving the light emitting unit. A power supply unit supplies a drive voltage for driving the display elements to power supply lines corresponding to the rows of display elements. A signal output unit supplies video signal voltages to data lines corresponding to the columns of the display elements. A control unit detects maximum grayscale values of input signals corresponding to the display elements arranged in the rows, and accordingly controls duty ratios of the drive voltage supplied to the power supply lines corresponding to the rows of the display elements. The control unit also controls values of video signals corresponding to the display elements in each row.

Data driver, display device, and electronic apparatus

Provided is a data driver configured to drive a display unit that includes a two-dimensional matrix of pixels, the data driver including: a resistance circuit to which a plurality of reference voltages with different values are applied, the resistance circuit including a plurality of output nodes configured to output the reference voltages and voltages obtained by dividing the reference voltages; a selector unit configured to select one of the plurality of output nodes in accordance with a value of an input gradation signal, and cause a voltage corresponding to the value of the gradation signal to be output; and a phase difference control unit configured to perform control to delay an output node selection operation by the selector unit in the case where an input gradation signal is included in a predetermined high tonal range or a predetermined low tonal range.

Neural network semiconductor device and system using the same

A semiconductor device capable of performing product-sum operation is provided. The semiconductor device includes a first memory cell, a second memory cell, and an offset circuit. The semiconductor device retains first analog data and reference analog data in the first memory cell and the second memory cell, respectively. A potential corresponding to second analog data is applied to each of them as a selection signal, whereby current depending on the sum of products of the first analog data and the second analog data is obtained. The offset circuit includes a constant current circuit comprising a transistor and a capacitor. A first terminal of the transistor is electrically connected to a first gate of the transistor and a first terminal of the capacitor. A second gate of the transistor is electrically connected to a second terminal of the capacitor. A voltage between the first terminal and the second gate of the transistor is held in the capacitor, whereby a change in source-drain current ...

DISPLAY DEVICE AND METHOD OF DRIVING THE SAME

A display device includes a display unit having display elements arrayed in rows and columns. The display elements each include a current-driven light emitting unit and a drive circuit for driving the light emitting unit. A power supply unit supplies a drive voltage for driving the display elements to power supply lines corresponding to the rows of display elements. A signal output unit supplies video signal voltages to data lines corresponding to the columns of the display elements. A control unit detects maximum grayscale values of input signals corresponding to the display elements arranged in the rows, and accordingly controls duty ratios of the drive voltage supplied to the power supply lines corresponding to the rows of the display elements. The control unit also controls values of video signals corresponding to the display elements in each row. 1. A display device comprising:a display unit having display elements arrayed in rows and columns of a two-dimensional matrix, the display elements each including a current-driven light emitting unit and a drive circuit for driving the light emitting unit;a power supply unit for supplying a drive voltage for driving the display elements to power supply lines provided in correspondence with the rows of the display elements;a signal output unit for supplying video signal voltages dependent on video signal values to data lines provided in correspondence with the columns of the display elements; anda control unit for detecting maximum grayscale values of input signals corresponding to the display elements arranged in rows on the basis of input signals for an image to be displayed, then, on the basis of a detection result, controlling duty ratios of the drive voltage supplied to the power supply lines provided in correspondence with the rows of the display elements, and controlling values of video signals corresponding to the display elements in each of the rows on the basis of the duty ratios of the drive voltage and the ...

WORK ASSIST SYSTEM AND WORK ASSIST METHOD

A work assist system includes an automatic driving information acquisition unit configured to acquire automatic driving information containing automatic driving level information representing automatic driving levels from a vehicle capable of automatic driving; a task information storage configured to store task information containing unprocessed tasks to be processed by a driver of the vehicle, groups that classify the tasks according to functions required for processing the tasks, and the automatic driving levels necessary for processing the tasks using the functions corresponding to the groups; and a task extractor configured to extract a task that is processable by the driver in the vehicle based on the automatic driving information acquired by the automatic driving information acquisition unit and the task information stored in the task information storage. 1. A work assist system comprising:an automatic driving information acquisition unit configured to acquire automatic driving information containing automatic driving level information representing automatic driving levels from a vehicle capable of automatic driving;a task information storage configured to store task information containing unprocessed tasks to be processed by a driver of the vehicle, groups that classify the tasks according to functions required for processing the tasks, and the automatic driving levels necessary for processing the tasks using the functions corresponding to the groups; anda task extractor configured to extract a task that is processable by the driver in the vehicle based on the automatic driving information acquired by the automatic driving information acquisition unit and the task information stored in the task information storage.2. The work assist system according to claim 1 , whereinthe automatic driving information acquisition unit is further configured to acquire the automatic driving information containing the automatic driving level information and expected traveling ...

SEMICONDUCTOR DEVICE

To provide a semiconductor memory device which can be manufactured with high yield and which can achieve higher integration. A pair of memory cells adjacent to each other in the bit line direction is connected to a bit line through a common contact hole. The pair of memory cells adjacent to each other in the bit line direction shares an electrode connected to the bit line. An oxide semiconductor layer included in the memory cell is provided to overlap with a word line and a capacitor line. A transistor and a capacitor included in the memory cell are each provided to overlap with the bit line connected to the memory cell. 1. A semiconductor device comprising:a semiconductor layer;a first electrode, a second electrode, and a third electrode over the semiconductor layer, wherein the second electrode is between the first electrode and the third electrode;a first insulating film over the first electrode, the second electrode, and the third electrode;a first wiring overlapping the first electrode with the first insulating film therebetween;a second wiring overlapping the semiconductor layer with the first insulating film therebetween, in a first region between the first electrode and the second electrode;a third wiring overlapping the semiconductor layer with the first insulating film therebetween, in a second region between the second electrode and the third electrode;a fourth wiring overlapping the third electrode with the first insulating film therebetween;a second insulating film over the first wiring, the second wiring, the third wiring, and the fourth wiring; anda fifth wiring over the second insulating film and electrically connected to the second electrode through a contact hole in the second insulating film,wherein the first wiring, the second wiring, the third wiring, and the fourth wiring are parallel to one another, andwherein the fifth wiring is perpendicular to the first wiring.2. The semiconductor device according to claim 1 , wherein the first electrode ...

Medium transport device and recording device

A medium transport device includes a restricting unit that is provided in a device main body, and that is coupled with an attaching and detaching operation of a unit body, which configures a portion of a transport pathway, to the device main body. The restricting unit changes between a first state that allows the cover to attain a closed state with respect to the device main body and a second state that restricts the cover from attaining a closed state with respect to the device main body.

Medium transport device and image processing apparatus

In a state where a second power transmission path of transmitting power from the second planetary gear to the cam driving gear through the intermediate gear is selected, when the intermediate gear is opposed to the non-tooth portion for the release position of the cam driving gear, the rotation direction of the driving motor is changed to select a first power transmission path of directly transmitting power from the first planetary gear to the cam driving gear, the non-tooth portion for the release position deviates from the opposed position of the intermediate gear, and the rotation direction of the driving motor is changed again to select the second power transmission path.

Image reading apparatus and image reading method

A white reference image is inputted to an image sensor so as to output groups of analog data. The groups of analog data are converted by a processing unit into those groups of digital data the number of which is smaller than that of photosensor elements of the image sensor. The lowest density value of the groups or digital data is inspected, an operating environment is set so that the lowest density value of the groups of digital data may become a density value within a predetermined range. An optical system, a drive unit and the processing unit are controlled under the operating environment so as to output from the processing unit, image data which express a subject image inputted to the image sensor.

Stop control system and method for internal combustion engine

To provide a stop control system for an internal combustion engine, which is capable of accurately stopping a piston at a predetermined position while compensating for variation in the stop characteristic of the piston and aging thereof. The stop control system 1 for the engine 3 according the present invention controls a throttle valve 13a toward an open side when an engine speed NE becomes lower than a stop control start rotational speed NEIGOFTH after the engine 3 is stopped (step 42), whereby a final compression stroke rotational speed NEPRSFTGT is controlled to a predetermined reference value NENPFLMTO, to thereby control the stop position of the piston 3d to a predetermined position. Further, the correlation between the stop control start rotational speed NEIGOFTH and the final compression stroke rotational speed NEPRSFTGT is determined (step 5, FIG. 9), and based on the determined correlation, a target stop control start rotational speed NEICOFREFX is calculate and learned (step ...

Control device

A control device for a rotating electrical machine, which is able to reduce a tracking delay of an actual output torque and actual currents with respect to a fluctuating torque command and fluctuating current commands and to reduce steady state deviations, is obtained. The control device includes a torque current computing unit; an actual current computing unit; a current feedback control unit; and a voltage control unit that controls voltages on the basis of the two-phase voltage commands. The torque command includes a fluctuation cancellation torque command for cancelling transmission torque fluctuations transmitted from the internal combustion engine, and the current feedback control unit includes a harmonic controller that calculates the two-phase voltage commands by using a characteristic of a transfer function corresponding to a periodic function of a frequency of the transmission torque fluctuations.

Semiconductor neural network device including a synapse circuit comprising memory cells and an activation function circuit

Novel connection between neurons of a neural network is provided. A perceptron included in the neural network includes a plurality of neurons; the neuron includes a synapse circuit and an activation function circuit; and the synapse circuit includes a plurality of memory cells. A bit line selected by address information for selecting a memory cell is shared by a plurality of perceptrons. The memory cell is supplied with a weight coefficient of an analog signal, and the synapse circuit is supplied with an input signal. The memory cell multiplies the input signal by the weight coefficient and converts the multiplied result into a first current. The synapse circuit generates a second current by adding a plurality of first currents and converts the second current into a first potential. The activation function circuit is a semiconductor device that converts the first potential into a second potential by a ramp function and supplies the second potential as an input signal of the synapse circuit ...

Semiconductor device and manufacturing method thereof

In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

A method includes forming a multilayered film including a conductive layer mainly containing aluminum, and a barrier metal layer formed thereon, forming a hard mask layer on the barrier metal layer, patterning a resist on the hard mask layer, patterning the hard mask layer by dry-etching the hard mask layer with the patterned resist as a mask, cleaning a surface of the barrier metal layer with a cleaning solution after the patterning the hard mask layer, and dry-etching the multilayered film with the patterned hard mask layer as a mask after the cleaning the surface of the barrier metal layer. In the patterning the hard mask layer, dry etching is performed with a ratio of a flow rate of an oxidizing gas to a total flow rate of a process gas at less than 1% in a state in which the barrier metal layer is exposed to the process gas. 1. A semiconductor device manufacturing method comprising:forming a multilayered film including a conductive layer mainly containing aluminum, and a barrier metal layer formed on the conductive layer;forming a hard mask layer on the barrier metal layer;patterning a resist on the hard mask layer;patterning the hard mask layer by dry-etching the hard mask layer by using the patterned resist as a mask;cleaning a surface of the barrier metal layer with a cleaning solution after the patterning the hard mask layer; anddry-etching the multilayered film by using the patterned hard mask layer as a mask after the cleaning the surface of the barrier metal layer,wherein in the patterning the hard mask layer, dry etching is performed by setting a ratio of a flow rate of an oxidizing gas to a total flow rate of a process gas at less than 1% in a state in which the barrier metal layer is exposed to the process gas.2. The method according to claim 1 , wherein in the patterning the hard mask layer claim 1 , the ratio of the flow rate of the oxidizing gas to the total flow rate of the process gas is set at 0% in the state in which the barrier metal layer is ...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion. 1. (canceled)2. A semiconductor device comprising:a first pixel; anda second pixel, a first photoelectric conversion element;', 'a first transistor; and', 'a second transistor,, 'wherein the first pixel comprises a second photoelectric conversion element;', 'a third transistor; and', 'a fourth transistor,, 'wherein the second pixel compriseswherein the first transistor is configured to output a signal corresponding to a potential of a first signal charge accumulation portion,wherein the second transistor is configured to control charge accumulation in the first signal charge accumulation portion performed by the first photoelectric conversion element,wherein the third transistor is configured to output a signal corresponding to a potential of a second signal charge accumulation portion,wherein the fourth transistor is configured to control charge accumulation in the second signal charge accumulation portion performed by the second photoelectric conversion element,wherein a channel formation region in the second transistor comprises an oxide semiconductor,wherein a channel formation region in the fourth transistor comprises an oxide semiconductor,wherein a gate of the second transistor is electrically connected to a gate of the fourth transistor,wherein a reset operation in the first pixel and a reset operation in the second pixel are performed at substantially the same time ...

Paper materials sorting apparatus

A paper materials sorting apparatus that includes note denomination discriminating mechanism for discriminating the paper materials based on note denominations of the paper materials, cassette assignment mechanism for assigning each of a plurality of wrapping devices and/or storage devices a note denomination, and a sorting mechanism for sorting the paper materials in accordance with their note denomination and for directing the sorted paper materials to the corresponding assigned wrapping devices and/or storage devices. The sorting mechanism further contains counting mechanism for counting throughput of the sorted paper materials into each of the assigned wrapping devices and/or storage devices, comparison mechanism for comparing the throughput of each of the assigned wrapping devices and/or storage devices, and an operation display for displaying a recommended operation to reassign the note denominations of the wrapping devices and/or storage devices in order to balance the sorting load ...

METHOD FOR DRIVING PHOTOSENSOR, METHOD FOR DRIVING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE

This invention has for purpose to provide a photosensor that is small in size and can obtain high-contrast image data and to provide a semiconductor device including the photosensor. In the photosensor including a light-receiving element, a transistor serving as a switching element, and a charge retention node electrically connected to the light-receiving element through the transistor, the reduction in charge held in the charge retention node is suppressed by extending the fall time of the input waveform of a driving pulse supplied to the transistor to turn off the transistor. 1. A method for driving a photosensor including a light-receiving element , a transistor serving as a switching element , and a charge retention node electrically connected to the light-receiving element through the transistor , the method comprising the step of:suppressing reduction in charge held in the charge retention node by extending a fall time of an input waveform of a driving pulse supplied to the transistor to turn off the transistor.2. The method for driving a photosensor claim 1 , according to claim 1 , wherein a channel formation region of the transistor comprises an oxide semiconductor.3. The method for driving a photosensor claim 1 , according to claim 1 , wherein the fall time of the input waveform of the driving pulse supplied to the transistor to turn off the transistor is longer than 0 ns and shorter than 200 ns.4. A method for driving a semiconductor device including a photosensor including a light-receiving element claim 1 , a transistor serving as a switching element claim 1 , and a charge retention node electrically connected to the light-receiving element through the transistor; and a capacitor electrically connected to a signal line configured to control the transistor claim 1 , the method comprising the step of:suppressing reduction in charge held in the charge retention node by extending, by the capacitor, a fall time of an input waveform of a driving pulse supplied ...

Semiconductor Device and Driving Method Thereof

A semiconductor device with high definition, which includes a plurality of sets each including a photosensor and a display element including a light-emitting element arranged in a matrix is provided, wherein a power supply line electrically connected to the display element also serves as a power supply line electrically connected to the photosensor. Thus, the semiconductor device with high definition can be provided without decreasing the width of each power supply line. Thus, the definition of the semiconductor device can be improved while securing the stability of the potential of the power supply line. The stability of the potential of the power supply line leads to the stability of the driving voltage of the display element and the stability of the driving voltage of the photosensor. Accordingly, the semiconductor device with high definition, high display quality, and high accuracy of imaging or detection of an object can be provided. 1. A semiconductor device comprising:a photosensor; anda display element including a light-emitting element,wherein a power supply line which is electrically connected to the display element including the light-emitting element also serves as a power supply line which is electrically connected to the photosensor.2. A semiconductor device comprising: a photosensor; and', 'a display element including a light-emitting element,, 'a plurality of sets, each of the plurality of sets includingwherein a power supply line which is electrically connected to the display element including the light-emitting element also serves as a power supply line which is electrically connected to the photosensor in one of the plurality of sets.3. The semiconductor device according to claim 2 , wherein the plurality of sets are arranged in a matrix of m (m is a natural number greater than or equal to 2) rows by n (n is a natural number greater than or equal to 2) columns.4. A semiconductor device comprising: a photosensor; and', 'a display element including ...

ABNORMALITY DETERMINATION DEVICE FOR AIR-FUEL RATIO SENSOR

An abnormality determination device for an air-fuel ratio sensor includes a differential value calculator and an abnormality determiner. The differential value calculator is configured to calculate a differential value of an output value of the air-fuel ratio sensor which is configured to detect an air-fuel ratio of exhaust gas. The abnormality determiner is configured to determine abnormality of the air-fuel ratio sensor based on a result of comparison between a reference output value of the air-fuel ratio sensor and a predetermined threshold. The reference output value is obtained by the air-fuel ratio sensor when the differential value calculated by the differential value calculator becomes a predetermined value. 1. An abnormality determination device for an air-fuel ratio sensor , comprising:a differential value calculator configured to calculate a differential value of an output value of the air-fuel ratio sensor which is configured to detect an air-fuel ratio of exhaust gas; andan abnormality determiner configured to determine abnormality of the air-fuel ratio sensor based on a result of comparison between a reference output value of the air-fuel ratio sensor and a predetermined threshold, the reference output value being obtained by the air-fuel ratio sensor when the differential value calculated by the differential value calculator becomes a predetermined value.2. The abnormality determination device according to claim 1 , whereinthe air-fuel ratio sensor has an output characteristic that a rate of change of the air-fuel ratio of the exhaust gas becomes maximum around a theoretical exhaust gas air-fuel ratio which is an exhaust gas air-fuel ratio corresponding to a theoretical air-fuel ratio of air-fuel mixture,the predetermined value is a local extremum of the differential value,the predetermined threshold includes a first threshold and a second threshold, andthe abnormality determiner is configured to determine abnormality of the air-fuel ratio sensor in ...

DISPLAY DEVICE

A display device includes a pixel area including pixels arranged in a matrix and having a horizontal resolution of 350 ppi or more and a color filter layer overlapping with the pixel area. The pixels each include a first transistor whose gate is electrically connected to a scan line and whose one of a source and a drain is electrically connected to a signal line; a second transistor whose gate is electrically connected to the other of the source and the drain of the first transistor and whose one of a source and a drain is electrically connected to a current-supplying line; and a light-emitting element electrically connected to the other of the source and the drain of the second transistor. The first and second transistors each have a channel formation region including a single crystal semiconductor. 1. A display device comprising:a pixel area comprising pixels arranged in a matrix and having a horizontal resolution of 350 ppi or more, the pixels each comprising a first transistor, a second transistor and a light-emitting element; anda color filter layer overlapping with the pixel area,wherein a gate of the first transistor is electrically connected to a first line,wherein one of a source and a drain of the first transistor is electrically connected to a second line,wherein a gate of the second transistor is electrically connected to the other of the source and the drain of the first transistor,wherein one of a source and a drain of the second transistor is electrically connected to the light-emitting element,wherein the other of the source and the drain of the second transistor is electrically connected to a third line,wherein each of the first transistor and the second transistor comprises a channel formation region comprising a single crystal semiconductor, andwherein the light-emitting element is configured to emit white light.2. The display device according to claim 1 ,wherein the pixels each further comprises a capacitor,wherein a first electrode of the ...

ABNORMALITY DETERMINING APPARATUS FOR AIR-FUEL RATIO SENSOR

An abnormality determining apparatus includes an air-fuel ratio controller, an output change period parameter calculator, an output change amount extremum calculator, and an abnormality determining device. The abnormality determining device is configured to determine an abnormality of an air-fuel ratio sensor based on a relationship between an output change period parameter and an output change amount extremum. 1. An abnormality determining apparatus comprising: a predetermined lean air-fuel ratio, or', 'a predetermined rich air-fuel ratio farther to a rich side as compared to the predetermined lean air-fuel ratio;, 'an air-fuel ratio controller configured to control an air-fuel mixture air-fuel ratio which is an air-fuel ratio of an air-fuel mixture of an internal combustion engine to be selectively either one of'}an output change period parameter calculator configured to calculate, after the air-fuel ratio controller performs at least one of first switching of the air-fuel mixture air-fuel ratio from the predetermined rich air-fuel ratio to the predetermined lean air-fuel ratio and second switching of the air-fuel mixture air-fuel ratio from the predetermined lean air-fuel ratio to the predetermined rich air-fuel ratio, an output change period parameter representing a period from a timing at which an amount of change of output of an air-fuel ratio sensor reaches a predetermined amount of change to a timing at which the amount of change of output of the air-fuel ratio sensor returns to the predetermined amount of change, the output of the air-fuel ratio sensor being to change due to at least one of the first switching and the second switching, the air-fuel ratio sensor being disposed in an exhaust gas passage of the internal combustion engine to detect an exhaust gas air-fuel ratio which is an air-fuel ratio of exhaust gas from the internal combustion engine;an output change amount extremum calculator configured to calculate an output change amount extremum ...

Air-fuel ratio control system for internal combustion engine

An air-fuel ratio control system for an internal combustion engine has a perturbation control which oscillates the air-fuel ratio with a first frequency. A first difference signal is generated indicative of a difference between a present value and a first past value from an air-fuel ratio sensor detected at a timing of a first specific period which is set to reduce a specific frequency component corresponding to a specific frequency different from the first frequency. A first frequency component is extracted. A second difference signal is generated indicative of a difference between a present value and a second past value detected at a timing of a second specific period which is set to reduce the first frequency component. The specific frequency component is extracted. A failure of the control system is determined by a relationship between intensities of the first frequency component and the specific frequency component.

APPARATUS FOR CONTROLLING AIR-FUEL RATIO OF INTERNAL-COMBUSTION ENGINE

An apparatus for controlling an air-fuel ratio of an internal-combustion engine includes an air-fuel ratio detector, a fluctuation signal generating device, an air-fuel ratio fluctuation device, a 0.5th-order frequency component strength calculator, a fluctuation frequency component strength calculator, a reference component strength calculator, and an imbalance fault determining device. The reference component strength calculator is configured to calculate strength of a reference component in accordance with strength of a first frequency component and strength of a second frequency component. The imbalance fault determining device is configured to make a determination of an imbalance fault in which air-fuel ratios of a plurality of cylinders vary beyond a tolerance limit on a basis of a relative relationship between strength of the 0.5th-order frequency component and the strength of the reference component. 1. An apparatus for controlling an air-fuel ratio of an internal-combustion engine , the apparatus comprising:an air-fuel ratio detector configured to detect an air-fuel ratio in an exhaust path of the internal-combustion engine including a plurality of cylinders;a fluctuation signal generating device configured to generate a fluctuation signal for causing the air-fuel ratio to fluctuate using a first signal with a first frequency and a second signal with a second frequency, the first frequency being different from a 0.5th-order frequency, the 0.5th-order frequency being equal to ½ of a frequency corresponding to a rotation speed of the internal-combustion engine, the second frequency being higher than the first frequency and different from the 0.5th-order frequency;an air-fuel ratio fluctuation device configured to cause the air-fuel ratio to fluctuate in accordance with the fluctuation signal;a 0.5th-order frequency component strength calculator configured to calculate strength of a 0.5th-order frequency component corresponding to the 0.5th-order frequency ...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor device comprises a semiconductor substrate, and a multilayer wiring structure arranged on the semiconductor substrate, the multilayer wiring structure including a plurality of first electrically conductive lines, an insulating film covering the plurality of first electrically conductive lines, and a second electrically conductive line arranged on the insulating film so as to intersect the plurality of first electrically conductive lines, wherein the insulating film has gaps in at least some of a plurality of regions where the plurality of first electrically conductive lines and the second electrically conductive line intersect each other, and a width of the gap in a direction along the second electrically conductive line is not larger than a width of the first electrically conductive line. 1. A method of manufacturing a semiconductor device having a semiconductor substrate , the method comprising:a first step of forming a plurality of first electrically conductive lines above the semiconductor substrate;a second step of forming an insulating film to cover the plurality of first electrically conductive lines;a third step of forming a plurality of trenches in the insulating film at a width not larger than a width of the first electrically conductive line, the plurality of trenches exposing a part of upper surfaces of the plurality of first electrically conductive lines;a fourth step of filling the plurality of trenches with first insulators;a fifth step of forming second electrically conductive lines on the insulating film and the first insulators so as to intersect the plurality of first electrically conductive lines;a sixth step of removing the first insulators from the respective trenches after said fifth step; anda seventh step of filling, with second insulators, portions of the plurality of trenches that do not overlap the second electrically conductive lines when viewed in a direction perpendicular to a surface of the semiconductor substrate, so ...

AIR-FUEL RATIO CONTROL APPARATUS FOR INTERNAL COMBUSTION ENGINE

An air-fuel ratio control apparatus for an internal combustion engine includes an air-fuel ratio detector, a fuel amount controller, an operational state parameter acquiring device, an extractor, a failure determination device, a variation state parameter calculator, and a determination stopping device. The operational state parameter acquiring device is configured to acquire at least one operational state parameter. The failure determination device is configured to execute failure determination of determining a failure in an air-fuel ratio control system of the internal combustion engine based on a specific frequency component extracted by the extractor. The variation state parameter calculator is configured to calculate a variation state parameter. The determination stopping device is configured to stop the failure determination if the variation state parameter calculated by the variation state parameter calculator is equal to or larger than a predetermined threshold value. 1. An air-fuel ratio control apparatus for an internal combustion engine , comprising:an air-fuel ratio detector configured to detect an air-fuel ratio in an exhaust passage provided in the internal combustion engine including a plurality of cylinders;a fuel amount controller configured to control an amount of fuel to be supplied to each of the plurality of cylinders;an operational state parameter acquiring device configured to acquire at least one operational state parameter representing an operational state of the internal combustion engine;an extractor configured to extract a specific frequency component from a detection signal output from the air-fuel ratio detector during a failure determination period;a failure determination device configured to execute failure determination of determining a failure in an air-fuel ratio control system of the internal combustion engine based on the specific frequency component extracted by the extractor;a variation state parameter calculator configured to ...

Transported material transporting device and image processing apparatus

A transported material transporting device including: a power transmission switching mechanism configured to switch the transmission of the power between the intermediate gear and the cam drive gear between a transmitted state and a blocked state; a detection lever provided in the reversing path and configured to detect the presence or absence of the material to be transported which enters the reversing path; and a blocked-state locking mechanism configured to lock the blocked state of the power transmission switching mechanism when the discharging roller is in the released state, wherein the locked state of the blocked-state locking mechanism is released and the power transmission switching mechanism is switched from the blocked state to the transmitted state upon detection of the position of the trailing end of the material to be transported entering the reversing path by the detection lever.

CONTROL DEVICE

A control device that controls an electric motor drive device including a DC/AC conversion section that converts a DC voltage into an AC voltage using a detected angle detected by a resolver provided in an AC electric motor to supply the resulting AC voltage to the AC electric motor. The control device includes a correction information acquisition section that acquires first correction information on the basis of the rotational speed, and that acquires the second correction information on the basis of the modulation rate at the angle acquisition time point in the case where the rotational speed at the angle acquisition time point is less than the rotational speed threshold. A detected angle correction section corrects the detected angle on the basis of the correction information acquired by the correction information acquisition section. 1. A control device that controls an electric motor drive device including a DC/AC conversion section that converts a DC voltage into an AC voltage using a detected angle detected by a resolver provided in an AC electric motor to supply the resulting AC voltage to the AC electric motor , the control device comprising:a detected angle acquisition section that acquires a detected angle detected by the resolver;a correction information storage section that stores both first correction information associated with a rotational speed of the AC electric motor and second correction information associated with a modulation rate, which is a ratio of an effective value of a fundamental-wave component of the AC voltage to the DC voltage, as correction information for correcting the detected angle;a correction information acquisition section that acquires the first correction information on the basis of the rotational speed in the case where the rotational speed at an angle acquisition time point when the detected angle acquisition section acquires the detected angle is equal to or more than a rotational speed threshold determined in advance, ...

IMAGE SENSOR, CAMERA, SURVEILLANCE SYSTEM, AND METHOD FOR DRIVING THE IMAGE SENSOR

Provided is an image sensor having a pixel includes a photoelectric conversion element; a capacitor which is connected between the photoelectric conversion element; a reset circuit which resets a potential of a node between the photoelectric conversion element and the capacitor; an amplifier circuit which outputs a signal corresponding to the potential of the node; and a switch which controls electrical conduction between the amplifier circuit and a vertical signal line. When the node is brought into an electrically floating state, the potential of the optical signal is stored in the node in a state of being inverted. When an optical signal is detected while the potential is stored in the node, the potential of the node increases in accordance with an output potential of the photoelectric conversion element, and thus the potential of the node corresponds to a difference in potential between the optical signals in different light-receiving periods. 1. An image sensor comprising:a vertical signal line;a pixel electrically connected to the vertical signal line; andan analog-digital conversion device electrically connected to the vertical signal line,wherein the pixel includes a photodiode, a first capacitor, a first transistor, a second transistor, a third transistor, a first wiring, a second wiring, a third wiring, and a fourth wiring,wherein one electrode of the first capacitor is electrically connected to an anode of the photodiode,wherein the other electrode of the first capacitor is electrically connected to a gate of the second transistor,wherein a node between the other electrode of the first capacitor and the gate of the second transistor is configured to store a potential corresponding to an amount of electric charge generated in the photodiode,wherein a gate of the first transistor is electrically connected to the first wiring,wherein one of a source and a drain of the first transistor is electrically connected to the node, and the other of the source and the ...

Semiconductor device and manufacturing method thereof

In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.

CONTROL DEVICE

A control device for a rotating electrical machine, which is able to reduce a tracking delay of an actual output torque and actual currents with respect to a fluctuating torque command and fluctuating current commands and to reduce steady state deviations, is obtained. The control device includes a torque current computing unit; an actual current computing unit; a current feedback control unit; and a voltage control unit that controls voltages on the basis of the two-phase voltage commands. The torque command includes a fluctuation cancellation torque command for cancelling transmission torque fluctuations transmitted from the internal combustion engine, and the current feedback control unit includes a harmonic controller that calculates the two-phase voltage commands by using a characteristic of a transfer function corresponding to a periodic function of a frequency of the transmission torque fluctuations. 15-. (canceled)6. A control device used to control a rotating electrical machine that is drivably coupled to an internal combustion engine and that is drivably coupled to a wheel , comprising:a torque current computing unit that uses a two-axis rotating coordinate system that is a rotating coordinate system having two axes that rotate in synchronization with rotation of the rotating electrical machine, and that computes two-phase current commands, which express current commands to be flowed through the rotating electrical machine in the two-axis rotating coordinate system, on the basis of a torque command that the rotating electrical machine is caused to output;an actual current computing unit that computes two-phase actual currents expressed in the two-axis rotating coordinate system on the basis of actual currents flowing through the rotating electrical machine;a current feedback control unit that varies two-phase voltage commands, which express voltage commands to be applied to the rotating electrical machine in the two-axis rotation coordinate system, such ...

SEMICONDUCTOR DEVICE AND METHOD OF DRIVING THE SAME

To reduce the effect of external light and to improve the accuracy of detecting the location of a touch. In an image-capture period, light emission from a self-light-emitting element is controlled, and imaging data at the time of displaying white on a display screen and imaging data at the time of displaying black on the display screen are output from each sensor pixel. The location of a sensor pixel where a difference between the two pieces of imaging data output from the same sensor pixel is the greatest is detected. Thus, the location of a touch of the object on the display screen is detected with high accuracy. By utilizing a difference between imaging data at the time of reverse display, the effect of external light can be reduced. 1. A semiconductor device comprising: a first transistor;', 'a second transistor;', 'a light-emitting element;', 'a first display pixel control signal line; and', 'a second display pixel control signal line, and, 'a display pixel comprising a third transistor;', 'a light-receiving element; and', 'an image-capture pixel control signal line,, 'a sensor pixel comprisingwherein a gate terminal of the first transistor and the first display pixel control signal line are electrically connected to each other,wherein a gate terminal of the second transistor and the second display pixel control signal line are electrically connected to each other,wherein a gate terminal of the third transistor and the image-capture pixel control signal line are electrically connected to each other,wherein one of a source terminal and a drain terminal of the first transistor and the light-emitting element are electrically connected to each other at a first node,wherein one of a source terminal and a drain terminal of the second transistor and the light-emitting element are electrically connected to each other at the first node, andwherein one of a source terminal and a drain terminal of the third transistor and the light-receiving element are electrically ...

SEMICONDUCTOR WAFER, FIELD-EFFECT TRANSISTOR, METHOD OF PRODUCING SEMICONDUCTOR WAFER, AND METHOD OF PRODUCING FIELD-EFFECT TRANSISTOR

Provided is a semiconductor wafer including a base wafer, a first insulating layer, and a semiconductor layer. Here, the base wafer, the first insulating layer and the semiconductor layer are arranged in an order of the base wafer, the first insulating layer and the semiconductor layer, the first insulating layer is made of an amorphous metal oxide or an amorphous metal nitride, the semiconductor layer includes a first crystal layer and a second crystal layer, the first crystal layer and the second crystal layer are arranged in an order of the first crystal layer and the second crystal layer in such a manner that the first crystal layer is positioned closer to the base wafer, and the electron affinity Eof the first crystal layer is larger than the electron affinity Eof the second crystal layer. 1. A semiconductor wafer comprising:a base wafer;a first insulating layer; anda semiconductor layer, whereinthe base wafer, the first insulating layer and the semiconductor layer are arranged in an order of the base wafer, the first insulating layer and the semiconductor layer,the first insulating layer is made of an amorphous metal oxide or an amorphous metal nitride,the semiconductor layer includes a first crystal layer and a second crystal layer,the first crystal layer and the second crystal layer are arranged in an order of the first crystal layer and the second crystal layer in such a manner that the first crystal layer is positioned closer to the base wafer, and{'sub': a1', 'a2, 'the electron affinity Eof the first crystal layer is larger than the electron affinity Eof the second crystal layer.'}2. The semiconductor wafer as set forth in claim 1 , whereinthe semiconductor layer further includes a third crystal layer,the first crystal layer, the second crystal layer and the third crystal layer are arranged in an order of the third crystal layer, the first crystal layer and the second crystal layer in such a manner that the third crystal layer is positioned closest to the ...

Method of manufacturing solid-state image sensor

A method of manufacturing a solid-state image sensor having a pixel region and a peripheral circuit region, includes forming an oxide film on a semiconductor substrate, forming an insulating film on the oxide film, forming a first opening in the insulating film and the oxide film in the peripheral circuit region, forming a trench in the semiconductor substrate in the peripheral circuit region by etching the semiconductor substrate through the first opening using the insulating film as a mask, forming a second opening in the insulating film to penetrate through the insulating film in the pixel region and to reach a predetermined depth of the oxide film, and forming insulators in the trench and the second opening.

SLOT MACHINE INCLUDING A PLURALITY OF VIDEO REEL STRIPS

Provided is a slot machine capable of reducing unfairness which may result between a player who has made an investment and a player who has not made an investment and allowing a player to proceed with a game by making an investment in expectation of a jackpot at ease. Each money amount which is constant is accumulated independently of a number of bets each time betting is conducted, and upon winning a jackpot, a money amount calculated by multiplying a money amount accumulated until then by a multiplying factor based on the number of bets is provided. 1. A slot machine comprising:a selection device operated by a player;a first display for displaying a part of a plurality of video reel strips having different kinds of symbols arranged thereon, the symbols including a plurality of kinds of character symbols; anda processor for causing a slot game including a base game and free games to proceed on the first display, the processor being programmed to execute processes (A) to (C) described below.(A) A process in which upon causing the base game to proceed, used are base game reel strips on which on all of the plurality of video reel strips, symbols whose each kind is the same are arranged in succession.(B) A process in which immediately after shifting from the base game to the free games, a selection game in which a player selects one kind of character symbols from the plurality of kinds of character symbols by using the selection device is caused to proceed.(C) A process in which upon causing the free games to proceed, used are free game reel strips on which on all of the plurality of video reel strips, the symbols whose each kind is the same are arranged in succession and only in a case of the one kind of character symbols selected in the selection game, symbols of the selected one kind are arranged in succession, a number of the symbols of the selected one kind being larger than a number of symbols of the selected one kind displayed on the base game reel strips.2. The ...

PRINT CONTROL DEVICE, NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM STORING PRINT CONTROL PROGRAM, AND PRINTED MATTER PRODUCTION METHOD

There is provided a print control device that causes a printing device to perform printing, the print control device including: a specifying section that specifies a print target from a captured image captured by an image capturing sensor; a display section that displays, on a display, a screen in which a trimmed image is superimposed on the captured image, the trimmed image being obtained by trimming a preview image of original print data in accordance with the print target; a setting receiving section that receives a setting of a relative position of the preview image with respect to the print target; a print instruction receiving section that receives a print instruction at the relative position; and a control section that causes the printing device to perform printing on the print target based on the original print data and the relative position according to the print instruction. 1. A print control device that causes a printing device to perform printing , the print control device comprising:a specifying section that specifies a print target from a captured image captured by an image capturing sensor;a display section that displays, on a display, a screen in which a trimmed image is superimposed on the captured image, the trimmed image being obtained by trimming a preview image of original print data in accordance with the print target;a setting receiving section that receives a setting of a relative position of the preview image with respect to the print target;a print instruction receiving section that receives a print instruction at the relative position; anda control section that causes the printing device to perform printing on the print target based on the original print data and the relative position according to the print instruction.2. The print control device according to claim 1 , whereinthe specifying section specifies the print target in a three-dimensional coordinate, andthe display section displays, on the display, the screen in which the trimmed ...

TOUCH PANEL SYSTEM, ELECTRONIC DEVICE, AND SEMICONDUCTOR DEVICE

An electronic device capable of efficiently recognizing a handwritten character is provided. 1. An electronic device comprising:a first circuit;a display portion; anda touch sensor,wherein the first circuit comprises a neural network,wherein the display portion comprises a flexible display,wherein the touch sensor is configured to output an input handwritten character as image information to the first circuit,wherein the first circuit is configured to analyze the image information and convert the image information into character information, and configured to display an image comprising the character information on the display portion, andwherein the analysis is performed by inference through the use of the neural network.2. An electronic device comprising:a first housing;a second housing;a third housing;a plurality of hinges,a first circuit;a display portion; anda touch sensor,wherein the first circuit comprises a neural network,wherein the display portion comprises a flexible display,wherein the flexible display comprises a portion held by the first housing, a portion held by the second housing, and a portion held by the third housing,wherein the touch sensor is configured to output an input handwritten character as image information to the first circuit,wherein the first circuit is configured to analyze the image information and convert the image information into character information, and configured to display an image comprising the character information on the display portion,wherein the analysis is performed by inference through the use of the neural network, andwherein the first housing, the second housing, and the third housing are joined by the plurality of hinges so that the flexible display is changed in shape reversibly between an opened state and a three-folded state.3. The electronic device according to claim 1 , wherein the first circuit comprises a memory capable of retaining analog data.4. The electronic device according to claim 1 , wherein the ...

SOLID STATE IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME

A method of manufacturing a solid state image sensor is provided. The method includes forming electrically conductive layer and an interlayer insulation film above a first region and a second region, performing an annealing process after forming the conductive layer and the interlayer insulation film, and forming a protective film above the interlayer insulation film and the electrically conductive layer. The electrically conductive layer includes a light shielding layer arranged above the second region. The interlayer insulation film includes a first portion located above the first region and a second portion located above the second region and below the light shielding layer. Before performing the annealing process, an average hydrogen concentration of the second portion is higher than an average hydrogen concentration of the first portion. 1. A method for manufacturing a solid state image sensor , the method comprising:forming electrically conductive layer and an interlayer insulation film above a semiconductor substrate, the semiconductor substrate having a first region and a second region, photoelectric conversion elements being arranged in the first region and the second region;performing an annealing process after forming the conductive layer and the interlayer insulation film; andforming a protective film above the interlayer insulation film and the electrically conductive layer,wherein the electrically conductive layer includes a light shielding layer arranged above the second region,the interlayer insulation film includes a first portion that is located above the first region and a second portion that is located above the second region and below the light shielding layer, andbefore performing the annealing process, the second portion of the interlayer insulation film has an average hydrogen concentration that is higher than an average hydrogen concentration of the first portion of the interlayer insulation film.2. The method according to claim 1 ,wherein, ...

OBJECT DETECTION DEVICE

An object detection device can dynamically set an appropriate object detection region according to a state of an inherently unobstructive moving object. The device includes: an optical scanning unit configured to scan measurement light in a measurement space and to guide reflected light from a reflector; a reflector detection unit configured to detect reflector information including a distance from the device to the reflector, a reflected light intensity, and a scanning direction of the measurement light; a reference body identification unit configured to identify whether the reflector is a predetermined reference body, based on the reflector information; a region defining unit configured to define an object detection region along the reference body, based on the reflector information about the reference body; and an object determination unit configured to determine, as a target object, a reflector that is present in the region and that is not identified as the reference body. 1. An object detection device for detecting an object in a measurement space , the device comprising:an optical scanning unit configured to scan the measurement space by measurement light emitted from a light emission unit and to guide reflected light from a reflector for the measurement light to a light receiving unit;a reflector detection unit configured to detect reflector information, the reflector information including a distance from the object detection device to the reflector calculated based on physical characteristics of the measurement light and the reflected light, a reflected light intensity detected by the light receiving unit, and a scanning direction of the measurement light;a reference body identification unit configured to identify whether the reflector is a predetermined reference body, based on the reflector information detected by the reflector detection unit;a region defining unit configured to define an object detection region along the reference body, based on the ...

VERTICAL CAVITY SURFACE EMITTING LASER

A vertical cavity surface emitting laser includes a semi-insulating substrate having a major surface including a first area and a second area, an n-type semiconductor layer that is provided on the first area and unprovided on the second area, a semiconductor laminate that is provided on the n-type semiconductor layer, a cathode electrode that is connected to the n-type semiconductor layer, an anode electrode that is connected to a top surface of the semiconductor laminate, and a first conductor that is connected to the anode electrode and extends from the first area to the second area. The semiconductor laminate includes a first distributed Bragg reflector provided on the n-type semiconductor layer, an active layer provided on the first distributed Bragg reflector, and a second distributed Bragg reflector provided on the active layer. The first conductor includes an anode electrode pad provided on the second area. 1. A vertical cavity surface emitting laser comprising:a semi-insulating substrate having a major surface including a first area and a second area;an n-type semiconductor layer provided on the first area, the n-type semiconductor layer being not provided on the second area;a semiconductor laminate provided on the n-type semiconductor layer, the semiconductor laminate including a first distributed Bragg reflector provided on the n-type semiconductor layer, an active layer provided on the first distributed Bragg reflector, and a second distributed Bragg reflector provided on the active layer;a cathode electrode connected to the n-type semiconductor layer;an anode electrode connected to a top surface of the semiconductor laminate; anda first conductor connected to the anode electrode, the first conductor extending from the first area to the second area, the first conductor including an anode electrode pad provided on the second area.2. The vertical cavity surface emitting laser according to claim 1 , wherein the second area includes a recess.3. The vertical ...

LOGIC CIRCUIT FORMED USING UNIPOLAR TRANSISTOR, AND SEMICONDUCTOR DEVICE

A semiconductor device using unipolar transistors, in which high and low levels are expressed using high and low power supply potentials, is provided. The semiconductor device includes four transistors, two capacitors, two wirings, two input terminals, and an output terminal. A source or a drain of the first transistor and a source or a drain of the fourth transistor are electrically connected to the first wiring. A gate of the fourth transistor is electrically connected to the first input terminal, and a gate of the second transistor is electrically connected to the second input terminal. A source or a drain of the second transistor and a source or a drain of the third transistor are electrically connected to the second wiring. The first transistor, the second transistor, and the two capacitors are electrically connected to the output terminal. 1. A semiconductor device comprising:first to fourth transistors;first and second capacitors;first and second wirings;first and second input terminals; andan output terminal,wherein one of a source and a drain of the fourth transistor is electrically connected to the first wiring,wherein the other of the source and the drain of the fourth transistor is electrically connected to one of a source and a drain of the second transistor, one terminal of the second capacitor, and a gate of the third transistor,wherein the other of the source and the drain of the second transistor is electrically connected to the second wiring,wherein a gate of the fourth transistor is electrically connected to the first input terminal, one terminal of the first capacitor, and a gate of the first transistor, wherein a gate of the second transistor is electrically connected to the second input terminal,wherein one of a source and a drain of the first transistor is electrically connected to the first wiring,wherein the other of the source and the drain of the first transistor is electrically connected to the other terminal of the first capacitor, the ...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion. 1. (canceled)2. A semiconductor device comprising:a photodiode;first to fourth transistors; anda capacitor,wherein one of a source and a drain of the first transistor is electrically connected to the photodiode,wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor,wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the third transistor,wherein the other of the source and the drain of the first transistor is electrically connected to the capacitor,wherein one of a source and a drain of the second transistor is electrically connected to one of a source and a drain of the fourth transistor, andwherein a channel formation region in the third transistor comprises an oxide semiconductor.3. The semiconductor device according to claim 2 , wherein the photodiode comprises a silicon.4. The semiconductor device according to claim 2 , wherein a channel formation region in the first transistor comprises an oxide semiconductor.5. A semiconductor device comprising:a photodiode;first to fourth transistors; anda capacitor,wherein one of a source and a drain of the first transistor is electrically connected to the photodiode,wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the ...

LIQUID DISCHARGE HEAD SUBSTRATE, LIQUID DISCHARGE HEAD, AND LIQUID DISCHARGE APPARATUS

A liquid discharge head substrate comprising a liquid discharge element arranged above a surface of a substrate, an insulator arranged between the surface and the liquid discharge element, a liquid supply port extending through the insulator, first and second conductive patterns is provided. The first pattern connects an element arranged on the surface and the liquid discharge element. The second pattern surrounds the liquid supply port. The insulator includes first and second films that are bonded at a bonding surface along the surface. A first member arranged in the first film and a second member arranged in the second film, of the first pattern, are bonded at the bonding surface. A third member arranged in the first film and a fourth member arranged in the second film, of the second pattern, are bonded at the bonding surface. 1. A liquid discharge head substrate comprising:a substrate;a semiconductor element arranged on a principal surface of the substrate;a liquid discharge element arranged above the principal surface and configured to discharge a liquid;an insulating film arranged between the principal surface and the liquid discharge element;a liquid supply port which extends through the substrate and the insulating film;a first electrically conductive pattern arranged in the insulating film to electrically connect the semiconductor element and the liquid discharge element; anda second electrically conductive pattern arranged in the insulating film so as to surround the liquid supply port in an orthogonal projection with respect to the principal surface,wherein the insulating film includes a first insulating film and a second insulating film arranged between the first insulating film and the liquid discharge element,the first insulating film and the second insulating film are bonded at a bonding surface extending in a direction along the principal surface,the first electrically conductive pattern includes a first electrically conductive member arranged in the ...

MEDIUM TRANSPORTATION DEVICE AND RECORDING APPARATUS

A medium transportation device includes a transportation driving roller that transports a medium; a roller unit including a separation roller as a driven roller that is rotated by rotation of the transportation driving roller and a shaft which penetrates a rotation center of the separation roller; a holder that detachably holds the roller unit; and a lock mechanism that switches between an unlocked state in which the roller unit is unlocked from the holder and a locked state in which the roller unit is locked to the holder. 1. A medium transportation device comprising:a transportation driving roller that transports a medium;a roller unit including a driven roller that is rotated by the rotation of transportation driving roller and a shaft which penetrates a rotation center of the driven roller;a holding section that detachably holds the roller unit; anda lock mechanism that switches between a locked state in which the roller unit is locked to the holding section and an unlocked state in which locking is released, whereinthe lock mechanism causes the roller unit to be switched from the unlocked state to the locked state when the driven roller of the roller unit in the unlocked state is rotated in a medium transportation direction by rotation of the transportation driving roller.2. The medium transportation device according to claim 1 , wherein the driven roller is configured to rotate integrally with the shaft when the lock mechanism is in the unlocked state claim 1 , and to be relatively rotatable to the shaft when the lock mechanism is in the locked state.3. The medium transportation device according to claim 2 , whereinthe lock mechanism includes a contact member that is fixed to the shaft and protrudes in a direction perpendicular to an axis direction of the shaft,the holding section includes a first bearing that receives a first end of the shaft, a second bearing that receives a second end, and a regulation member that regulates the shaft from rotating in the ...

SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF

To provide a semiconductor device in which power consumption can be reduced and operation delay due to a stop and a restart of supply of power supply voltage can be suppressed and a driving method thereof. A potential corresponding to data held in a period during which power supply voltage is continuously supplied is saved to a node connected to a capacitor before the supply of power supply voltage is stopped. By utilizing change of channel resistance of a transistor whose gate is the node, data is loaded when the supply of power supply voltage is restarted. 1. A semiconductor device comprising:a volatile memory;a first transistor;a second transistor; anda third transistor,wherein a first terminal of the first transistor is electrically connected to the volatile memory,wherein a second terminal of the first transistor is electrically connected to a gate of the second transistor,wherein a first terminal of the second transistor is electrically connected to a first terminal of the third transistor, andwherein a second terminal of the third transistor is electrically connected to the volatile memory.2. The semiconductor device according to claim 1 ,wherein the first transistor comprises a channel formation region comprising an oxide semiconductor.3. The semiconductor device according to claim 1 ,wherein the volatile memory comprises a first inverter and a second inverter,wherein an input terminal of the first inverter and an output terminal of the second inverter are electrically connected to a first node,wherein an output terminal of the first inverter and an input terminal of the second inverter are electrically connected to a second node,wherein the first terminal of the first transistor is electrically connected to the first node, andwherein the second terminal of the third transistor is electrically connected to the second node.4. The semiconductor device according to claim 1 ,wherein the volatile memory comprises a first inverter and a second inverter,wherein the ...

METHOD FOR PRODUCING POLYETHYLENE-BASED RESIN LAMINATED FOAM SHEET, POLYETHYLENE-BASED RESIN LAMINATED FOAM SHEET, AND INTERLEAF FOR GLASS PLATE USING THEREOF

A method for producing a polyethylene-based resin laminated foam sheet according to the present invention is a method for producing a polyethylene-based resin laminated foam sheet with thickness of 0.05 to 0.5 mm in which an anti-static layer is adhered by lamination on at least one surface of the foam layer, including: a step of performing coextrusion and foaming of a laminate which is obtained by combining and laminating, in a die , a melt resin composition for forming a foam layer obtained by kneading a low density polyethylene A and a physical foaming agent and a melt resin composition for forming an anti-static layer obtained by kneading a low density polyethylene B and an anti-static agent, wherein the anti-static agent is a polymeric anti-static agent C which has a melting point to allow a melting point difference in the range of from −10° C. to +10° C. compared to that of the low density polyethylene B and has a melt flow rate of 10 g/10 minutes or more. 1. A method for producing a polyethylene-based resin laminated foam sheet with thickness of 0.05 to 0.5 mm in which an anti-static layer is adhered by lamination on at least one surface of the foam layer , comprising:a step of performing coextrusion and foaming of a laminate which is obtained by combining and laminating, in a die, a melt resin composition for forming a foam layer obtained by kneading a low density polyethylene A and a physical foaming agent and a melt resin composition for forming an anti-static layer obtained by kneading a low density polyethylene B and an anti-static agent,wherein the anti-static agent is a polymeric anti-static agent C which has a melting point to allow a melting point difference in the range of from −10° C. to +10° C. compared to that of the low density polyethylene B and has a melt flow rate of 10 g/10 minutes or more.2. The method for producing a polyethylene-based resin laminated foam sheet according to claim 1 , wherein the low density polyethylene A and the low ...

ELECTRONIC DEVICE

An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire. 1. (canceled)2. An electronic device comprising:a photodiode;a first transistor;a second transistor;a third transistor;a first wire;a second wire;a third wire;a fourth wire;a fifth wire;a sixth wire; anda seventh wire,wherein a first electrode of the photodiode is electrically connected to the first wire,wherein a second electrode of the photodiode is electrically connected to one of a source and a drain of the first transistor,wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor,wherein one of a source and a drain of the second transistor is electrically connected to the second wire,wherein the other of the source and the drain of the second transistor is electrically connected to one of a source and a drain of the third transistor,wherein the other of the source and the drain of the third transistor is electrically connected to the third wire,wherein a gate of the first transistor is electrically connected to the fourth wire,wherein a gate of the third transistor is electrically connected to the fifth wire,wherein the first wire and the sixth wire cross each other,wherein the first wire is electrically connected to the sixth wire,wherein the first wire and the fifth ...

SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE

A semiconductor device that has a long data retention time during stop of supply of power supply voltage by reducing leakage current due to miniaturization of a semiconductor element. In a structure where charge corresponding to data is held with the use of low off-state current of a transistor containing an oxide semiconductor in its channel formation region, a transistor for reading data and a transistor for storing charge are separately provided, thereby decreasing leakage current flowing through a gate insulating film. 1. A semiconductor device comprising:a first circuit; anda second circuit comprising a first transistor, a second transistor, and a third transistor,wherein:the first circuit is configured to retain data while a power supply voltage is supplied,the second circuit is configured to retain the data while the power supply voltage is not supplied,each of the first transistor and the second transistor comprises a channel formation region including an oxide semiconductor,the third transistor comprises a channel formation region including silicon,a gate of the second transistor is electrically connected to one of a source and a drain of the first transistor, anda gate of the third transistor is electrically connected to one of a source and a drain of the second transistor.2. A semiconductor device comprising:a first circuit; anda second circuit comprising a first transistor, a second transistor, and a third transistor,wherein:the first circuit is configured to retain data while a power supply voltage is supplied,the second circuit is configured to retain the data while the power supply voltage is not supplied,each of the first transistor and the second transistor comprises a channel formation region including an oxide semiconductor,a gate of the first transistor is configured to be supplied with a first control signal for saving the data from the first circuit to the second circuit,the third transistor comprises a channel formation region including ...

Medium transport device and recording device

In a medium transport device, when a unit body is inserted into an installation unit and an opening and closing body is closed with respect to the device main body, the unit body is positioned in a position that configures a portion of a transport pathway as a result of the opening and closing body pressing first target pressing units that are provided in the unit body.

MEDIUM TRANSPORT DEVICE AND RECORDING DEVICE

A medium transport device includes a restricting unit that is provided in a device main body, and that is coupled with an attaching and detaching operation of a unit body, which configures a portion of a transport pathway, to the device main body. The restricting unit changes between a first state that allows the cover to attain a closed state with respect to the device main body and a second state that restricts the cover from attaining a closed state with respect to the device main body. 1. A medium transport device comprising:a device main body that is provided with a transport unit that transports a medium;a transport pathway that configures the transport unit;an opening and closing body that is openable and closeable with respect to the device main body;an installation unit that is provided in the device main body, and is exposed when the opening and closing body is open with respect to the device main body;a unit body that is attachable and detachable with respect to the installation unit in a state in which the installation unit is exposed, and that configures a portion of the transport pathway in a state of being installed in the installation unit; anda restricting unit that is provided in the device main body, and that changes between a first state that allows the opening and closing body to attain a closed state with respect to the device main body and a second state that restricts the opening and closing body from attaining a closed state with respect to the device main body in tandem with an attaching and detaching operation of the unit body with respect to the device main body.2. The medium transport device according to claim 1 ,wherein the opening and closing body is provided with a target restricting unit that is provided facing a device main body side, and that follows a track that is established according to an opening and closing operation of the opening and closing body,wherein, in the first state, the restricting unit migrates to a position that ...

PROTECTION CIRCUIT FOR SECONDARY BATTERY AND SECONDARY BATTERY MODULE

A secondary battery deteriorates due to repeated charging and discharging, which leads to a decrease in a battery voltage and a battery capacity. The lifetime of a secondary battery is prolonged by preventing charging at an excessive charging value that would be caused by deterioration of the secondary battery. By performing charge control in consideration of the degree of deterioration of a secondary battery, a longer lifetime of a secondary battery can be achieved. In charging a secondary battery, a charge control circuit controls a current value to a preset value, and a charging current control circuit (specifically a circuit including an error amplifier) included in a protection circuit determines a current value supplied to the secondary battery. That is, the current value supplied to the secondary battery is controlled by both the charge control circuit and the charging current control circuit that is a part of the protection circuit. 1. A secondary battery module comprising:a secondary battery;an overcharge detection circuit electrically connected to the secondary battery;an overdischarge detection circuit electrically connected to the secondary battery;a first transistor for discharge control electrically connected to the secondary battery; anda second transistor for charge control electrically connected in series to the first transistor,wherein a gate of the second transistor is connected to an output terminal of an error amplifier,wherein the output terminal of the error amplifier is electrically connected to the overcharge detection circuit,wherein a gate of the first transistor is electrically connected to the overdischarge detection circuit,wherein a resistor is included between the secondary battery and the first transistor,wherein a first input terminal of the error amplifier receiving a reference voltage is electrically connected to the secondary battery, andwherein a second input terminal of the error amplifier receiving a feedback signal is ...

SLOT MACHINE INCLUDING A PLURALITY OF VIDEO REEL STRIPS

Provided is a slot machine capable of reducing unfairness which may result between a player who has made an investment and a player who has not made an investment and allowing a player to proceed with a game by making an investment in expectation of a jackpot at ease. Each money amount which is constant is accumulated independently of a number of bets each time betting is conducted, and upon winning a jackpot, a money amount calculated by multiplying a money amount accumulated until then by a multiplying factor based on the number of bets is provided. 1. A gaming machine comprising:a symbol display device having symbol display regions for displaying a part of reel strips on which a plurality of kinds of symbols including particular symbols are arranged; anda processor for causing a game to proceed by displaying the reel strips in a scrolling manner and by arranging a plurality of symbols in the symbol display regions of the symbol display device for each unit game in a viewable manner,the processor being programmed to execute processes (1) and (2) described below.(1) A process in which in regions outside the symbol display regions, a plurality of the particular symbols are arranged in succession, the process being executed for each unit game.(2) A process in which after the particular symbols have been arranged in succession by the process (1), scrolling of the reel strips is started and the particular symbols are caused to be viewable in the symbol display regions.2. The gaming machine according to claim 1 , wherein the processor for executing the game executes a base game and a separate game including a plural number of games claim 1 , to which the game shifts when a particular trigger occurs in the base game claim 1 , andfurther, when the processor executes the process (1) for each execution of the separate game, the processor is previously set to arrange the particular symbols in succession such that a number of the particular symbols to be arranged in ...

CONTROL DEVICE FOR HYBRID VEHICLE

In a first slip suppression control by a first slip suppression control unit when a vehicle stops on a slope, an electronic control unit controls an output torque of an electric motor so that a rotation speed of an input rotation member of a hydraulic power transmission reaches a predetermined target rotation speed during stopping of an engine. The electronic control unit starts the engine when the output torque of the electric motor is greater than a predetermined torque. Accordingly, when the output torque of the electric motor at a rotation speed under a slip suppression control is insufficient, the output torque of the engine can be used and thus a locked state of the electric motor is appropriately prevented. 1. A hybrid vehicle comprising:an engine;an electric motor;a hydraulic power transmission that is disposed between the engine and driving wheels, the hydraulic power transmission being disposed between the electric motor and the driving wheels; and (a) control an output torque of the electric motor so that a rotation speed of an input rotation member of the hydraulic power transmission reaches a predetermined target rotation speed during stopping of the engine, and', '(b) start the engine when the output torque of the electric motor is greater than a predetermined torque., 'an electronic control unit configured to'}2. The hybrid vehicle according to claim 1 , whereinthe electronic control unit is configured to control an output torque of the engine so that the rotation speed of the input rotation member of the hydraulic power transmission reaches the target rotation speed, after the engine is started.3. The hybrid vehicle according to claim 2 , whereinthe electronic control unit is configured to increase the rotation speed of the engine using the output torque of the electric motor and to increase the output torque of the engine, when the output torque of the engine exceeds a maximum output torque of the engine at a current rotation speed of the engine.4. ...

ELECTRONIC DEVICE SYSTEM

Providing a new display device and a display method. When image data is sent from a processor to a display unit, the image data is divided into 2 or more parts such as a photographic picture and a non-picture, and corresponding compressed data is generated by performing a suitable compression processing. The size of each of the compressed data is reduced and is thus suitable to be sent to a display unit. Each of the compressed data is decompressed by a display driver; thus becoming decompressed data. Each of the decompressed data is used for display by the display unit. Other than numerical operation, a display unit having a reflective pixel and a self-luminous pixel may be used to combine the decompressed data. 1. An electronic device system comprising a processor , a first circuit , a second circuit , and a display unit ,wherein the processor is configured to generate first image data and second image data,wherein the first circuit is configured to compress the first image data and the second image data under different compression conditions to generate first compressed data and second compressed data,wherein the second circuit is configured to decompress the first compressed data and the second compressed data to generate first decompressed data and second decompressed data, andwherein the display unit is configured to use the first decompressed data and the second decompressed data to perform display.2. The electronic device system according to claim 1 , wherein one of the first image data and the second image data includes a pixel specified as black by the processor.3. The electronic device system according to claim 1 ,wherein the first compressed data and the second compressed data are in a JPEG format or in a format similar thereto, andwherein the first image data is configured to be compressed under a reversible compression condition.4. The electronic device system according to claim 1 , wherein the first circuit is configured to compress the first image ...

Method for producing polyethylene-based resin extruded foam sheet, polyethylene-based resin extruded foam sheet, and plate interleaf sheet using the same for glass sheets

Provided is a method for producing a polyethylene-based resin extruded foam sheet by extruding and foaming a foamable molten resin composition formed by kneading a mixture containing a low-density polyethylene, a physical blowing agent, and an antistatic agent, wherein the foam sheet has a thickness in a range of from 0.05 to 0.5 mm, and the antistatic agent is a polymeric antistatic agent having a melting point whose different from the melting point of the low-density polyethylene is in a range of from −10 to +10° C., and having a melt flow rate of 10 g/10 min or more. This method enables a novel polyethylene-based resin extruded foam sheet to be obtained that is of high quality such that formation of a small hole or a through-hole has been reduced or eliminated, and has both excellent strength and a shock-absorbing property despite a very small thickness even in medium- or long-term continuous production, and besides, exhibits a sufficient antistatic property, thus suitable as a glass plate interleaf sheet.

MULTI-LAYER FOAM SHEET AND INTERLEAF SHEET FOR GLASS PLATES

A multi-layer foam sheet with an apparent density of 30 to 300 kg/mand a thickness of 0.05 to 2 mm, including a foam layer containing a polyethylene-based resin (A), and an antistatic layer fusion-laminated by coextrusion on each of both sides of the foam layer. The antistatic layer has a basis weight of 1 to 10 g/mand contains a polyethylene-based resin (B), a polystyrene-based resin, a styrenic elastomer, and a polymeric antistatic agent, with the polystyrene-based resin being contained in the antistatic layer in an amount of 15 to 70% by weight. 110-. (canceled)11. A multi-layer foam sheet with an apparent density of 30 to 300 kg/mand a thickness of 0.05 to 2 mm , comprising a foam layer that comprises a polyethylene-based resin (A) , and an antistatic layer that is fusion-laminated by coextrusion on each of both sides of the foam layer ,{'sup': '2', 'wherein the antistatic layer has a basis weight of 1 to 10 g/mand contains a polyethylene-based resin (B), a polystyrene-based resin, a styrenic elastomer and a polymeric antistatic agent, with the polystyrene-based resin being present in an amount of 15 to 70% by weight based on the weight of the antistatic layer.'}12. The multi-layer foam sheet as recited in claim 11 , wherein the polyethylene-based resin (B) forms a continuous phase claim 11 , while the polystyrene-based resin and the polymeric antistatic agent separately form dispersed phases that are dispersed in the continuous phase.13. The multi-layer foam sheet as recited in claim 12 , wherein the polystyrene-based resin is present in an amount of 15 to 50% by weight based on the weight of the antistatic layer.14. The multi-layer foam sheet as recited in claim 11 , wherein both of the polyethylene-based resin (B) and the polystyrene-based resin form continuous phases with the polymeric antistatic agent being dispersed in the continuous phase of the polyethylene-based resin (B).15. The multi-layer foam sheet as recited in claim 14 , wherein the polystyrene- ...

SEMICONDUCTOR WAFER, METHOD OF PRODUCING SEMICONDUCTOR WAFER AND ELECTRONIC DEVICE

To provide a semiconductor wafer having a wafer, a compound semiconductor layer, a first insulating layer and a second insulating layer, wherein in the depth direction, oxygen atoms and nitrogen atoms are continuously distributed, the number of the nitrogen atoms along the depth direction shows its maximum in the first insulating layer, the total number of third atoms and fourth atoms along the depth direction becomes the largest in the compound semiconductor layer, the number of the oxygen atoms at the interface between the compound semiconductor layer and the first insulating layer is smaller than the number of the oxygen atoms at the interface between the first insulating layer and the second insulating layer. 1. A semiconductor wafer having a wafer , a compound semiconductor layer , a first insulating layer and a second insulating layer that are positioned in the order of the wafer , the compound semiconductor layer , the first insulating layer and the second insulating layer , whereinthe first insulating layer contains: one or more first atoms that are selected from the group consisting of all the metallic atoms, B atoms, Si atoms, As atoms, Te atoms and At atoms; oxygen atoms; and nitrogen atoms,the second insulating layer contains: one or more second atoms selected from the group consisting of all the metallic atoms; oxygen atoms; and nitrogen atoms,the compound semiconductor layer contains: third atoms that are metallic atoms; and fourth atoms that are non-metallic atoms,in the depth direction that is from a surface of the second insulating layer to the wafer, the oxygen atoms and the nitrogen atoms are continuously distributed in the second insulating layer, the first insulating layer and the compound semiconductor layer,the number of atoms per unit volume of the nitrogen atoms along the depth direction shows its maximum in the first insulating layer,the total number of atoms per unit volume of the third atoms and the fourth atoms along the depth direction ...

Electronic device

An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire.

LIQUID EJECTING APPARATUS

A printer, which is an example of a liquid ejecting apparatus, including a slide mechanism that has a first member and a second member configured to slide with each other in lifting and lowering directions; a head that is fixed to the first member and has a nozzle for ejecting a liquid; a lifting and lowering mechanism that is fixed to the second member, and lifts and lowers the head in the lifting and lowering directions; and a cap that covers the nozzle. The first member is configured of a wall member having an elongated hole, and the second member is configured of a pin. The lifting and lowering mechanism relatively moves the head toward the cap in a state where the head does not slide in a direction away from the cap. 1. A liquid ejecting apparatus comprising:a slide mechanism that has a first member and a second member configured to slide with each other in lifting and lowering directions;a head that is fixed to the first member and has a nozzle for ejecting a liquid;a lifting and lowering mechanism that is fixed to the second member, and lifts and lowers the head in the lifting and lowering directions; anda cap that covers the nozzle, whereinthe lifting and lowering mechanism relatively moves the head toward the cap in a state where the head does not slide via the slide mechanism in a direction away from the cap.2. The liquid ejecting apparatus according to claim 1 , whereinthe slide mechanism includes a first wall surface extending in the lifting and lowering directions, a second wall surface extending in a direction intersecting the lifting and lowering directions, a slide member that slides with respect to the first wall surface while being in contact with the first wall surface, and an abutting surface configured to change presence and absence of contact with the second wall surface by sliding of the slide member, andthe abutting surface comes into contact with the second wall surface so that the head does not slide in a direction away from the cap.3. A ...

LIQUID EJECTING APPARATUS AND MANUFACTURING METHOD OF LIQUID EJECTING APPARATUS

A printer, which is an example of a liquid ejecting apparatus, includes a movable body including a head for ejecting a liquid or a cap performing maintenance of the head. Further, the printer includes a pair of rack and pinion mechanisms including a rack and a drive gear to move the movable body in a first direction in which the rack extends; and a switching mechanism provided for each of the rack and pinion mechanisms and switching presence and absence of meshing between the rack and the drive gear when the movable body is at an exchange position. 1. A liquid ejecting apparatus comprising:a movable body including a head for ejecting a liquid or a maintenance section performing maintenance of the head;a pair of rack and pinion mechanisms including a rack and a drive gear to move the movable body in a first direction in which the rack extends; anda switching mechanism provided for each of the rack and pinion mechanisms and switching presence and absence of meshing between the rack and the drive gear when the movable body is at an exchange position.2. The liquid ejecting apparatus according to claim 1 , whereinthe switching mechanism includes a tooth portion provided on one of the rack and the drive gear, and a groove provided on the other side and configured to mesh with the tooth portion, andwhen the movable body is attached,the meshing between the tooth portion and the groove of the switching mechanism is performed before the meshing between the rack and the drive gear,when the tooth portion and the groove of the switching mechanism mesh with each other, a relative distance between the rack and the drive gear is narrowed so that the rack and the drive gear are configured to mesh with each other, andwhen the tooth portion and the groove of the switching mechanism do not mesh with each other, the relative distance between the rack and the drive gear is not narrowed, and the rack and the drive gear do not mesh with each other.3. The liquid ejecting apparatus according ...

HEAD LIFTING LOWERING DEVICE, CONTROL METHOD OF HEAD LIFTING LOWERING DEVICE, NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM STORING PROGRAM, MANUFACTURING METHOD OF HEAD LIFTING LOWERING DEVICE

A head lifting lowering device includes: a lifting lowering mechanism that moves a liquid ejecting head, which ejects a liquid, in a first direction in which the liquid ejecting head is lifted/lowered; a frame that supports the lifting lowering mechanism; and an adjusting member that moves the lifting lowering mechanism relative to the frame in a second direction different from the first direction. 1. A head lifting lowering device comprising:a lifting lowering mechanism that moves a liquid ejecting head, which ejects a liquid, in a first direction in which the liquid ejecting head is lifted/lowered;a frame that supports the lifting lowering mechanism; andan adjusting member that moves the lifting lowering mechanism relative to the frame in a second direction different from the first direction.2. The head lifting lowering device according to claim 1 , whereinthe lifting lowering mechanism includes a rail supported by the frame, andthe rail guides, in the first direction, a protrusion provided in the liquid ejecting head.3. The head lifting lowering device according to claim 2 , whereinthe rail has a movable rail and a fixed rail,the fixed rail is fixed to the frame, andthe adjusting member moves the movable rail relative to the frame.4. The head lifting lowering device according to claim 3 , whereinthe first direction includes a component of a horizontal direction,the movable rail includes an upper wall and a lower wall that form a moving path on which the protrusion moves,in the movable rail, compared with a first gap between the upper wall and the lower wall in a first end of the moving path, a second gap between the upper wall and the lower wall in a second end opposite to the first end is wide, andthe second end is adjacent to the fixed rail.5. The head lifting lowering device according to claim 3 , whereinthe first direction includes a component of a horizontal direction,the movable rail includes an upper wall and a lower wall that form a moving path on which ...

SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE

A semiconductor device has a function of storing data and includes an output terminal, a first terminal, a second terminal, a first circuit, and second circuits. The first circuit has a function of keeping the potential of the output terminal to be a high-level or low-level potential. The second circuits each include a first pass transistor and a second pass transistor which are electrically connected in series, a first memory circuit, and a second memory circuit. The first and second memory circuits each have a function of making a potential retention node in an electrically floating state. The potential retention nodes of the first and second memory circuits are electrically connected to gates of the first and second pass transistors, respectively. A transistor including an oxide semiconductor layer may be provided in the first and second memory circuits. 1. A semiconductor device comprising:an output terminal;a first terminal;a second terminal;a first circuit; anda second circuit,wherein the first circuit comprises a first transistor, a second transistor, and an inverter,wherein the second circuit comprises a third transistor, a fourth transistor, a third circuit, and a fourth circuit,wherein the third circuit comprises a first node,wherein the fourth circuit comprises a second node,wherein an input terminal of the inverter is electrically connected to the second terminal,wherein an output terminal of the inverter is electrically connected to the output terminal,wherein the first transistor and the second transistor are electrically connected in parallel between the second terminal and a wiring supplied with a first potential,wherein a gate of the first transistor is electrically connected to the output terminal of the inverter,wherein the third circuit is configured to make the first node in an electrically floating state,wherein the fourth circuit is configured to make the second node in an electrically floating state,wherein the third transistor and the fourth ...

SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE

A semiconductor device suitable for low-voltage driving. The semiconductor device includes a first transistor, a second transistor, a power supply line, a circuit, and a memory circuit. The first transistor controls electrical continuity between the circuit and the power supply line. The memory circuit stores data for setting a gate potential of the first transistor. The second transistor controls electrical continuity between an output node of the memory circuit and a gate of the first transistor. The second transistor is a transistor with an ultralow off-state current, for example, an oxide semiconductor transistor. In a period for operating the circuit, a first potential is input to the power supply line and the second transistor is turned off. In a period for updating the gate potential of the first transistor, a second potential is input to the power supply line. The second potential is higher than the first potential. 1. (canceled)2. A method for driving a semiconductor device comprising a first transistor; a second transistor and a circuit wherein the second transistor comprises a channel formation region comprising an oxide semiconductor , wherein one of a source and a drain of the second transistor is electrically connected to a gate of the first transistor and wherein one of a source and a drain of the first transistor is electrically connected to the circuit , the method comprising the steps of:inputting a first potential applied to the other of the source and the drain of the second transistor to the gate of the first transistor by turning on the second transistor while applying a second potential to the other of the source and the drain of the first transistor;electrically floating the gate of the first transistor by turning off the second transistor; andchanging a potential of the other of the source and the drain of the first transistor from the second potential to a third potential while the second transistor is in an off-state.3. The method ...

MEDIUM TRANSPORTING DEVICE AND RECORDING APPARATUS

A medium transporting device includes a first roller that inverts a medium supplied from a processing section side, the processing section processing the medium; a second roller that is located closer to the processing section than the first roller, the second roller having a function of inverting the medium supplied from the processing section side and a function of applying a transporting force to the medium using an outer peripheral surface of the second roller that faces both a pre-inversion medium transporting pathway for transporting a medium that has not been inverted by the first roller and a post-inversion medium transporting pathway for transporting a medium that has been inverted by the first roller; a medium transporting pathway that causes the medium supplied from the processing section side to be inverted along the second roller and causes the medium thus inverted to be supplied to the processing section side. 1. A medium transporting device comprising:a first roller that inverts a medium supplied from a processing section side, the processing section processing the medium;a second roller that is located closer to the processing section than the first roller, the second roller having a function of inverting the medium supplied from the processing section side and a function of applying a transporting force to the medium using an outer peripheral surface of the second roller that faces both a pre-inversion medium transporting pathway for transporting a medium that has not been inverted by the first roller and a post-inversion medium transporting pathway for transporting a medium that has been inverted by the first roller;a first medium transporting pathway that causes the medium supplied from the processing section side to be inverted along the first roller and causes the medium thus inverted to be supplied to the processing section side; anda second medium transporting pathway that causes the medium supplied from the processing section side to be ...

MULTILAYER FOAM SHEET AND INTERLEAF SHEET FOR GLASS PLATES

A multi-layer foam sheet with an apparent density of 30 to 300 kg/mand a thickness of 0.05 to 2 mm, including a foam layer containing a polyethylene-based resin, and an antistatic layer fusion-laminated by coextrusion on each of both sides of the foam layer. The antistatic layer has a basis weight of 1 to 10 g/mand contains a polyethylene-based resin, a polystyrene-based resin, a styrenic elastomer, and a polymeric antistatic agent, with the polystyrene-based resin being contained in the antistatic layer in an amount of 15 to 70% by weight. 110-. (canceled)11. A multi-layer foam sheet with an apparent density of 30 to 300 kg/mand a thickness of 0.05 to 2 mm , comprising a foam layer that comprises a polyethylene-based resin (A) , and an antistatic layer that is fusion-laminated by coextrusion on each of both sides of the foam layer ,{'sup': '2', 'wherein the antistatic layer has a basis weight of 1 to 10 g/mand contains a polyethylene-based resin (B), a polystyrene-based resin, a styrenic elastomer and a polymeric antistatic agent, with the polystyrene-based resin being present in an amount of 15 to 70% by weight based on the weight of the antistatic layer, wherein the polyethylene-based resin (B) forms a continuous phase, while the polystyrene-based resin and the polymeric antistatic agent separately form dispersed phases that are dispersed in the continuous phase, and'}wherein the dispersed phases of the polystyrene-based resin extend in a plane direction of the multi-layer foam sheet.12. The multi-layer foam sheet as recited in claim 11 , wherein the dispersed phases of the polystyrene-based resin include those which have an aspect ratio of 3 or more in a vertical cross-section of the multi-layer foam sheet.13. The multi-layer foam sheet as recited in claim 11 , wherein the polystyrene-based resin has a melt flow rate of 5.0 to 15 g/10 min at a temperature 200° C. and a load of 5 kg and wherein the melt flow rate of the polystyrene-based resin is 0.5 to 1.5 times ...

SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING SEMICONDUCTOR DEVICE

A novel comparison circuit, a novel amplifier circuit, a novel battery control circuit, a novel battery protection circuit, a power storage device, a semiconductor device, an electronic device, and the like are provided. The semiconductor device includes a capacitor, a first amplifier circuit including a first output terminal electrically connected to a first electrode of the capacitor, and a second amplifier circuit including an input terminal, a second output terminal, a first transistor, and a second transistor; a second electrode of the capacitor is electrically connected to the input terminal; the input terminal is electrically connected to a gate of the first transistor and one of a source and a drain of the second transistor; one of a source and a drain of the first transistor is electrically connected to the second output terminal; the second transistor has a function of supplying a potential to the input terminal and holding the potential; and a channel formation region of the second transistor includes a metal oxide containing at least one of indium and gallium. 1. A semiconductor device comprising:a first amplifier circuit comprising a first output terminal;a capacitor; anda second amplifier circuit comprising an input terminal, a second output terminal, a first transistor, and a second transistor,wherein the first output terminal is electrically connected to a first electrode of the capacitor,wherein a second electrode of the capacitor is electrically connected to a gate of the first transistor and one of a source and a drain of the second transistor through the input terminal,wherein one of a source and a drain of the first transistor is electrically connected to the second output terminal, andwherein a channel formation region of the second transistor comprises a metal oxide containing at least one of indium and gallium.2. A semiconductor device comprising:a first amplifier circuit comprising a first output terminal;a capacitor; anda second amplifier ...

SLOT MACHINE INCLUDING A PLURALITY OF VIDEO REEL STRIPS

Provided is a slot machine capable of reducing unfairness which may result between a player who has made an investment and a player who has not made an investment and allowing a player to proceed with a game by making an investment in expectation of a jackpot at ease. Each money amount which is constant is accumulated independently of a number of bets each time betting is conducted, and upon winning a jackpot, a money amount calculated by multiplying a money amount accumulated until then by a multiplying factor based on the number of bets is provided. 110-. (canceled)11. A slot machine comprising:a first display for displaying a part of a plurality of reel strips having different kinds of symbols arranged thereon, the symbols including a plurality of kinds of character symbols;a processor for causing a slot game including a base game and free games to proceed on the first display;a value-addition mechanism by which currency or other gaming value to be bet can be added to the gaming machine and credited to a player's available-betting-amount account;a bet-placing mechanism by which the player can bet an amount of gaming value on the outcome of a slot game to be played; anda pay-out mechanism by which gaming value can be paid out to the player or credited to the player's available-betting-amount account under control of the controller and in accordance with a final outcome of the slot game once it has been played, wherein,the processor being programmed to execute processes (A) to (B) described below.(A) A process in which upon causing the base game to proceed, used are base game reel strips on which on all of the plurality of reel strips, symbols whose each kind is the same are arranged in succession.(B) A process in which upon causing the free games to proceed, used are free game reel strips on which on all of the plurality of reel strips, the symbols whose each kind is the same are arranged in succession and only in a case of the one kind of character symbols ...

SEMICONDUCTOR DEVICE AND SYSTEM USING THE SAME

A semiconductor device capable of performing product-sum operation is provided. The semiconductor device includes a first memory cell, a second memory cell, and an offset circuit. The semiconductor device retains first analog data and reference analog data in the first memory cell and the second memory cell, respectively. A potential corresponding to second analog data is applied to each of them as a selection signal, whereby current depending on the sum of products of the first analog data and the second analog data is obtained. The offset circuit includes a constant current circuit comprising a transistor and a capacitor. A first terminal of the transistor is electrically connected to a first gate of the transistor and a first terminal of the capacitor. A second gate of the transistor is electrically connected to a second terminal of the capacitor. A voltage between the first terminal and the second gate of the transistor is held in the capacitor, whereby a change in source-drain current of the transistor can be suppressed. 1. A semiconductor device comprising:an offset circuit;a first memory cell; anda second memory cell,wherein the offset circuit comprises a first constant current circuit, a second constant current circuit, first to third transistors, a first capacitor, a first wiring, a second wiring, a first output terminal, a second output terminal, and a current mirror circuit,wherein the first constant current circuit comprises a fourth transistor, a fifth transistor, and a second capacitor,wherein the fourth transistor comprises a first gate and a second gate,wherein the second constant current circuit comprises a sixth transistor, a seventh transistor, and a third capacitor,wherein the sixth transistor comprises a first gate and a second gate,wherein a first terminal of the first transistor is electrically connected to a first terminal of the second transistor,wherein a gate of the first transistor is electrically connected to a second terminal of the ...

SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF

A semiconductor device includes a photodiode, a first transistor, a second transistor, and a third transistor. The second transistor and the third transistor have a function of retaining a charge accumulated in a gate of the first transistor. In a period during which the second transistor and the third transistor are off, a voltage level of a voltage applied to a gate of the second transistor is set to be lower than a voltage level of a source of the second transistor and a voltage level of a drain of the second transistor, and a voltage level of a voltage applied to a gate of the third transistor is set to be lower than a voltage level of a source of the third transistor and a voltage level of a drain of the third transistor. 1. (canceled)2. A semiconductor device comprising:a photosensor comprising:a first transistor;a second transistor;a third transistor; anda fourth transistor,wherein a first terminal of the first transistor is electrically connected to a first terminal of the second transistor and a gate of the third transistor,wherein a first terminal of the third transistor is electrically connected to a first terminal of the fourth transistor, andwherein a voltage level of a gate of the first transistor is lower than a voltage level of the first terminal of the first transistor and a voltage level of a second terminal of the first transistor, and a voltage level of a gate of the second transistor is lower than a voltage level of the first terminal of the second transistor and a voltage level of a second terminal of the second transistor when a charge corresponding to an amount of incident light to the photosensor and accumulated to the gate of the third transistor is retained by turning off the first transistor and the second transistor.3. The semiconductor device according to claim 2 ,wherein the first transistor comprises a channel formation region comprising an oxide semiconductor.4. The semiconductor device according to claims 2 ,wherein the second ...

MEDIUM TRANSPORT DEVICE AND RECORDING APPARATUS

A medium transport device includes a medium transport pathway that inverts a medium that is supplied from a processing unit and is capable of transporting the medium to the processing unit again, a plurality of supply units that supply media, and a plurality of convergence units at which the plurality of supply units and the medium transport route converge. A transport roller is provided in each convergence unit. 1. A medium transport device comprising:a medium transport pathway that inverts a medium that is supplied from a processing unit that executes a process on the medium, and is capable of transporting the medium to the processing unit again;a discharge unit that discharges the medium that is supplied from the processing unit;a first supply unit that supplies a first medium;a first convergence unit at which the first supply unit and the medium transport pathway converge;a second supply unit that supplies a second medium;a second convergence unit that is positioned further downstream than the first convergence unit, and at which the second supply unit and the medium transport pathway converge;a first transport roller that is provided in the first convergence unit; anda second transport roller that is provided in the second convergence unit.2. The medium transport device according to claim 1 ,wherein the first transport roller is provided witha first driving roller, anda first driven roller.3. The medium transport device according to claim 2 , further comprising:a third supply unit that supplies a third medium;a third convergence unit that is positioned further upstream than the first convergence unit, and at which the third supply unit and the medium transport pathway converge; anda third transport roller that is provided in the third convergence unit.4. The medium transport device according to claim 3 ,wherein the medium transport pathway that converges at the third convergence unit is a medium transport pathway for reverse face processing that processes a ...

VERTICAL CAVITY SURFACE EMITTING LASER

A vertical cavity surface emitting laser includes a first laminate including first semiconductor layers having a first Al composition, and second semiconductor layers having a second Al composition greater than the first Al composition; a current confinement structure including a current aperture and a current blocker; a first compound semiconductor layer adjacent to the current confinement structure; and a second compound semiconductor layer adjacent to the first laminate and the first compound semiconductor layer. The first compound semiconductor layer has a first aluminum profile changing monotonously in a direction from the first laminate to the current confinement structure from a first minimum Al composition within a range greater than the first Al composition and smaller than the second Al composition to a first maximum Al composition. The second compound semiconductor layer has an Al composition greater than the first Al composition and smaller than the first maximum Al composition. 1. A vertical cavity surface emitting laser comprising:an active layer provided inside a semiconductor post;a first laminate for distributed Bragg reflection, the first laminate provided inside the semiconductor post;a current confinement structure comprising a current aperture and a current blocker surrounding the current aperture, the current confinement structure provided inside the semiconductor post;a first compound semiconductor layer provided inside the semiconductor post, wherein first compound semiconductor layer is adjacent to the current confinement structure between the first laminate and the current confinement structure; anda second compound semiconductor layer provided inside the semiconductor post, wherein the second compound semiconductor layer is adjacent to the first laminate and the first compound semiconductor layer between the first laminate and the first compound semiconductor layer,wherein the current aperture includes a III-V compound semiconductor ...

TOUCH PANEL SYSTEM, ELECTRONIC DEVICE, AND SEMICONDUCTOR DEVICE

An electronic device capable of efficiently recognizing a handwritten character is provided. 1. An electronic device comprising:a pixel portion comprising a pixel;a neural network circuit electrically connected to the pixel portion; anda touch sensor electrically connected to the pixel portion,wherein the neural network circuit comprises a first transistor and a second transistor,wherein the first transistor comprises silicon in a channel formation region, andwherein the second transistor comprises an oxide semiconductor in a channel formation region.2. The electronic device according to claim 1 ,wherein the neural network circuit comprises a synapse,wherein the synapse comprises the first transistor and the second transistor.3. The electronic device according to claim 1 ,wherein the second transistor is stacked over the first transistor.4. The electronic device according to claim 1 ,wherein the neural network circuit is configured to analyze a pattern of an image information obtained by the touch sensor, and to convert the image information into character information.5. The electronic device according to claim 1 , wherein the oxide semiconductor comprises indium claim 1 , gallium claim 1 , and zinc.6. The electronic device according to claim 1 , wherein the pixel comprises a liquid crystal element or a light-emitting element. One embodiment of the present invention relates to a touch panel system and an electronic device using the touch panel system.Another embodiment of the present invention relates to a semiconductor device.Note that in this specification and the like, a semiconductor device generally means a device that can function by utilizing semiconductor characteristics. A display device, a light-emitting device, a memory device, an electro-optical device, an electric storage device, a semiconductor circuit, and an electronic device include a semiconductor device in some cases.Note that one embodiment of the present invention is not limited to the above ...

Logic Circuit and Semiconductor Device Formed Using Unipolar Transistor

A semiconductor device is provided; the semiconductor device includes unipolar transistors. A steady-state current does not flow in the semiconductor device. The semiconductor device uses a high-level potential and a low-level potential to express a high level and a low level, respectively. The semiconductor device includes unipolar transistors, a capacitor, first and second input terminals, and an output terminal. To the second input terminal, a signal is input whose logic is inverted from the logic of a signal input to the first input terminal. The semiconductor device has a circuit structure called bootstrap in which two unipolar transistors are connected in series between the high-level potential and the low-level potential and a capacitor is provided between an output terminal and a gate of one of the two transistors. A delay is caused between the gate of the transistor and the signal output from the output terminal, whereby the bootstrap can be certainly performed. 1. A semiconductor device comprising:first to eighth transistors;first and second capacitors;first and second wirings;first and second input terminals; andfirst and second output terminals,wherein one of a source and a drain of the first transistor is electrically connected to the first wiring,wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, one terminal of the first capacitor, and the first output terminal,wherein the other of the source and the drain of the second transistor is electrically connected to the second wiring,wherein a gate of the first transistor is electrically connected to a gate of the fourth transistor, one of a source and a drain of the eighth transistor, one of a source and a drain of the seventh transistor, one terminal of the second capacitor, and a gate of the sixth transistor,wherein a gate of the second transistor is electrically connected to the other terminal of the ...

PROGRAMMABLE LOGIC DEVICE AND SEMICONDUCTOR DEVICE

To provide a PLD having a reduced circuit area and an increased operation speed. In the circuit structure, a gate of a transistor provided between an input terminal and an output terminal of a programmable switch element is in an electrically floating state in a period when a signal is input to the programmable switch element. The structure enables the voltage of a gate to be increased by a boosting effect in response to a signal supplied from programmable logic elements, suppressing a reduction in amplitude voltage. This can reduce a circuit area by a region occupied by a booster circuit such as a pull-up circuit and increase operation speed. 1. (canceled)2. A programmable logic device comprising: an input terminal;', 'an output terminal;', 'a first transistor;', 'a second transistor;', 'an insulating film over the first transistor and the second transistor;', 'a third transistor over the insulating film; and', 'a fourth transistor over the insulating film,, 'a programmable switch element comprisingwherein a first terminal of the first transistor is electrically connected to the input terminal,wherein a second terminal of the first transistor and a first terminal of the second transistor are electrically connected to each other,wherein a second terminal of the second transistor is electrically connected to the output terminal,wherein a first terminal of the third transistor is electrically connected to a gate of the first transistor, andwherein a first terminal of the fourth transistor is electrically connected to a gate of the second transistor.3. The programmable logic device according to claim 2 ,wherein the third transistor comprises a channel formation region comprising an oxide semiconductor, andwherein the fourth transistor comprises a channel formation region comprising an oxide semiconductor.4. The programmable logic device according to claim 3 ,wherein the oxide semiconductor of the channel formation region of the third transistor comprises In, Ga, and Zn ...

DECODER, RECEIVER, AND ELECTRONIC DEVICE

A decoder with reduced power consumption is provided. The decoder includes a first circuit and a second circuit for holding data. The second circuit includes a first transistor, a second transistor, and a third transistor. The first transistor and the second transistor include an oxide semiconductor in a channel formation region. The third transistor includes silicon in a channel formation region. A gate of the second transistor is electrically connected to one of a source and a drain of the first transistor and a gate of the third transistor is electrically connected to one of a source and a drain of the second transistor. The decoder is configured to provide or stop power supply to the semiconductor device depending on a packet ID of a header portion of the data and to perform data storing or restoring of data between the first circuit and the second circuit. 1. A decoder configured to decode data , the decoder comprising: a first circuit; and', a first transistor;', 'a second transistor, a gate of the second transistor is electrically connected to one of a source and a drain of the first transistor; and', 'a third transistor, a gate of the third transistor is electrically connected to one of a source and a drain of the second transistor,, 'a second circuit comprising], 'a semiconductor device comprisingwherein the first circuit is configured to hold data while power supply voltage is supplied,wherein the second circuit is configured to hold the data while power supply voltage is not supplied,wherein the first transistor and the second transistor comprise an oxide semiconductor in a channel formation region,wherein the third transistor comprises silicon in a channel formation region,wherein the decoder is configured to provide and stop power supply to the semiconductor device depending on an identifier of a header portion of the data, andwherein the decoder is configured to perform data storing and restoring of data between the first circuit and the second circuit ...

ON-VEHICLE COMMUNICATION DEVICE, COMMUNICATION CONTROL METHOD, AND NON-TRANSITORY STORAGE MEDIUM

An on-vehicle communication device includes a vehicle information acquiring unit configured to acquire at least one of vehicle speed information on a vehicle capable of performing self-driving and current location information on the vehicle; a self-driving level acquiring unit configured to acquire self-driving level information indicating a self-driving level of the vehicle; and a controller configured to determine whether to enable or disable a connection to a high-confidential communication channel based on the self-driving level information and at least one of the vehicle speed information and the current location information. 1. An on-vehicle communication device comprising:a vehicle information acquiring unit configured to acquire at least one of vehicle speed information on a vehicle capable of performing self-driving and current location information on the vehicle;a self-driving level acquiring unit configured to acquire self-driving level information indicating a self-driving level of the vehicle; anda controller configured to determine whether to enable or disable a connection to a high-confidential communication channel based on the self-driving level information and at least one of the vehicle speed information and the current location information.2. A communication control method comprising:acquiring at least one of vehicle speed information on a vehicle capable of performing self-driving and current location information on the vehicle;acquiring self-driving level information indicating a self-driving level of the vehicle; anddetermining whether to enable or disable a connection to a high-confidential communication channel based on the self-driving level information and at least one of the vehicle speed information and the current location information.3. A non-transitory storage medium that stores a computer program for causing a computer to execute:acquiring at least one of vehicle speed information on a vehicle capable of performing self-driving and ...

AI SYSTEM AND OPERATION METHOD OF AI SYSTEM

A system that creates a net list from a circuit diagram or a document showing a circuit structure is provided. The system is an AI system including a first electronic device. The first electronic device includes an input/output interface, a control portion, and a first conversion portion. The input/output interface is electrically connected to the control portion, and the first conversion portion is electrically connected to the control portion. The input/output interface has a function of transmitting input data generated by a user's operation to the control portion, and the control portion has a function of transmitting the input data to the first conversion portion. Note that the input data is a circuit diagram illustrating a circuit structure or a document file showing the circuit structure. The first conversion portion includes a circuit where a neural network is formed, and the input data is converted to a net list with the use of the neural network of the first conversion portion. 1. An AI system comprising:a first electronic device,wherein the first electronic device comprises an input/output interface, a control portion, and a first conversion portion,wherein the input/output interface is electrically connected to the control portion,wherein the first conversion portion is electrically connected to the control portion,wherein the input/output interface has a function of transmitting input data generated by a user's operation to the control portion,wherein the control portion has a function of transmitting the input data to the first conversion portion,wherein the first conversion portion comprises a circuit where a neural network is formed,wherein the first conversion portion has a function of converting the input data to a first net list with the use of the neural network, andwherein the input data is a circuit diagram illustrating a circuit structure or a document file showing the circuit structure.2. The AI system according to claim 1 ,wherein the first ...

SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE

Novel connection between neurons of a neural network is provided. 1. A semiconductor device comprising a neural network ,wherein the neural network comprises a multilayer perceptron, a row decoder, and a column decoder,wherein the perceptron comprises a plurality of neurons,wherein the neuron comprises a synapse circuit and an activation function circuit,wherein the synapse circuit comprises a plurality of memory cells,wherein the column decoder is configured such that address information for selecting the memory cell is different in every perceptron,wherein the row decoder is configured such that a bit line selected by the address information for selecting the memory cell is shared by a plurality of perceptrons,wherein the memory cell is supplied with a weight coefficient of an analog signal,wherein the synapse circuit is supplied with an input signal of an analog signal,wherein the memory cell is configured to multiply the input signal by the weight coefficient,wherein the memory cell is configured to convert the multiplied product into a first current,wherein the synapse circuit is configured to generate a second current by adding a plurality of first currents,wherein the synapse circuit is configured to convert the second current into a first potential,wherein the activation function circuit is configured to convert the first potential into a second potential by a ramp function, andwherein the synapse circuit comprised in a neuron in a next stage is supplied with the second potential as the input signal.2. The semiconductor device according to claim 1 ,wherein the synapse circuit further comprises a signal line WD, a signal line WW, a signal line SL, a signal line RW, and a wiring COM,wherein the memory cell comprises a first transistor, a second transistor, and a first capacitor,wherein the memory cell is electrically connected to the signal line WD, the signal line WW, the signal line SL, the signal line RW, and the wiring COM,wherein a gate of the first ...

Electronic device

An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion. 1. (canceled)2. A semiconductor device comprising: a photoelectric conversion element;', 'a signal charge accumulation portion;', 'a charge accumulation control transistor, wherein one of a source and a drain of the charge accumulation control transistor is electrically connected to the photoelectric conversion element and the other of the source and the drain of the charge accumulation control transistor is electrically connected to the signal charge accumulation portion;, 'a plurality of pixels arranged in a matrix, each of the plurality of pixels comprisingwherein a charge accumulation operation by the photoelectric conversion element is performed in the plurality of pixels at substantially the same time, and a read operation of a signal from each of the plurality of pixels is performed per row, andwherein gates of the charge accumulation control transistors in the plurality of pixels are electrically connected to each other.3. The semiconductor device according to claim 2 ,wherein a channel formation region in the charge accumulation control transistor comprises an oxide semiconductor.4. The semiconductor device according to claim 2 ,wherein each of the plurality of pixels further comprises an amplifying transistor and a selection transistor,wherein a gate of the amplifying transistor is electrically connected to the signal charge accumulation portion, andwherein one of ...

SEMICONDUCTOR WAFER, MANUFACTURING METHOD OF SEMICONDUCTOR WAFER AND METHOD FOR MAUNFACTURING COMPOSITE WAFER

A semiconductor wafer comprises, on a semiconductor crystal layer forming wafer, a first semiconductor crystal layer, a second semiconductor crystal layer, and a third semiconductor crystal layer in this order, wherein both the etching rates of the first semiconductor crystal layer and the third semiconductor crystal layer by a first etching agent are higher than the etching rate of the second semiconductor crystal layer by the first etching agent, and both the etching rates of the first semiconductor crystal layer and the third semiconductor crystal layer by a second etching agent are lower than the etching rate of the second semiconductor crystal layer by the second etching agent. 1. A semiconductor wafer comprising , on a semiconductor crystal layer forming wafer , a first semiconductor crystal layer , a second semiconductor crystal layer , and a third semiconductor crystal layer , the semiconductor crystal layer forming wafer , the first semiconductor crystal layer , the second semiconductor crystal layer , and the third semiconductor crystal layer being positioned in the order of the semiconductor crystal layer forming wafer , the first semiconductor crystal layer , the second semiconductor crystal layer , and the third semiconductor crystal layer , whereinboth the etching rate of the first semiconductor crystal layer by a first etching agent and the etching rate of the third semiconductor crystal layer by the first etching agent are higher than the etching rate of the second semiconductor crystal layer by the first etching agent, andboth the etching rate of the first semiconductor crystal layer by a second etching agent and the etching rate of the third semiconductor crystal layer by the second etching agent are lower than the etching rate of the second semiconductor crystal layer by the second etching agent.2. The semiconductor wafer according to claim 1 , further comprising a fourth semiconductor crystal layer claim 1 , the semiconductor crystal layer ...

STORAGE DEVICE, SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE, AND SERVER SYSTEM

Data corrupted by a soft error is recovered. A storage device includes a first memory cell, a second memory cell, a sense circuit electrically connected to the first memory cell through a first sense line and to the second memory cell through a second sense line, a digital-analog converter circuit electrically connected to the first memory cell and the second memory cell through a bit line, and an analog-digital converter circuit. The digital-analog converter circuit has a function of applying voltages as first signals to the first memory cell and the second memory cell. Even when a soft error occurs in the first memory cell or the second memory cell, the storage device has a function of recovering data corrupted by the soft error because the sense circuit selects and outputs a higher one of the voltages applied to the first memory cell and the second memory cell. 1. A storage device comprising:a first memory cell and a second memory cell;a digital-analog converter circuit electrically connected to the first memory cell and the second memory cell through a bit line;a sense circuit electrically connected to the first memory cell through a first sense line and to the second memory cell through a second sense line; andan analog-digital converter circuit,wherein the digital-analog converter circuit is configured to apply voltages as first signals to the first memory cell and the second memory cell,wherein the sense circuit is configured to select as a second signal a higher one of the voltages applied to the first memory cell and the second memory cell, andwherein the analog-digital converter circuit is configured to convert the second signal into a digital signal.2. The storage device according to claim 1 , wherein each of the first memory cell and the second memory cell is configured to retain a multilevel data voltage.3. The storage device according to claim 1 ,wherein each of the first memory cell and the second memory cell comprises a transistor comprising a ...

Digital analog conversion circuit, data driver, display device, electronic apparatus, and driving method of digital analog conversion circuit, driving method of data driver, and driving method of display device

A digital to analog conversion circuit is disclosed. In one example, the conversion circuit includes a selector unit and a differential amplifier. The selector unit includes a selector unit that selects nodes from a voltage dividing circuit based upon bit information of a higher order side of an input digital signal and outputs voltages of the selected nodes. The differential amplifier includes differential pairs to which the output voltages of the selector unit are input. When a voltage corresponding to the digital signal is output, after a correspondence relationship between the output voltages of the selector unit and the inputs of the respective differential pairs of the differential amplifier is allowed to have a short settling time, and is then controlled in accordance with the bit information of the lower order side of the input digital signal.

SEMICONDUCTOR DEVICE INCLUDING PRODUCT-SUM OPERATION CIRCUIT AND MEMORY DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE

A semiconductor device which can efficiently perform reading of a weight coefficient and a product-sum operation is provided. The semiconductor device includes a product-sum operation circuit and a memory device. The product-sum operation circuit is formed using transistors formed on a semiconductor substrate, and a memory cell of the memory device is formed using an OS transistor provided to be stacked above the semiconductor substrate. The semiconductor device includes a plurality of product-sum operation units where the product-sum operation circuit and the memory cell of the memory device are electrically connected to each other. In each of the product-sum operation units, a weight coefficient stored in the memory cell can be read and a product-sum operation can be performed. 1. A semiconductor device comprising a plurality of product-sum operation units ,wherein the plurality of product-sum operation units each comprise a first circuit and a memory cell,wherein the first circuit comprises a first transistor on a semiconductor substrate,wherein the memory cell comprises a second transistor including a metal oxide in a channel formation region,wherein the second transistor is stacked above the first transistor, andwherein the first circuit is configured to read data stored in the memory cell and perform a product-sum operation.2. A semiconductor device comprising:a word line driver circuit;a bit line driver circuit; anda product-sum operation block,wherein the product-sum operation block comprises a plurality of product-sum operation units,wherein the plurality of product-sum operation units comprise a first circuit and a memory cell,wherein the first circuit comprises a first transistor on a semiconductor substrate,wherein the memory cell comprises a second transistor including a metal oxide in a channel formation region,wherein the second transistor is stacked above the first transistor,wherein each of the word line driver circuit and the bit line driver ...

Semiconductor device

A semiconductor device having a novel structure is provided. The semiconductor device includes a plurality of operation circuits that can switch different kinds of operation processing; a plurality of switch circuits that can switch a connection state between the operation circuits; and a controller. The operation circuit includes a first memory that stores data corresponding to a weight parameter used in the plurality of kinds of operation processing. The operation circuit executes a product-sum operation by switching weight data in accordance with a context. The switch circuit includes a second memory that stores data for switching a plurality of connection states in response to switching of a second context signal. The controller generates a second context signal on the basis of a first context signal. The amount of data stored in the second memory can be smaller than the amount of data stored in the first memory in the operation circuit.

SEMICONDUCTOR DEVICE

A semiconductor device includes a CPU and an accelerator that includes a first memory circuit, a driver circuit, and a product-sum operation circuit. The first memory circuit includes a first data retention portion, a second data retention portion, and a data reading portion. The first data retention portion, the second data retention portion, and the data reading portion each include a first transistor. The first transistor contains a metal oxide in a channel formation region. First data stored in the first data retention portion and second data stored in the second data retention portion are each weight data input to the product-sum operation circuit. The product-sum operation circuit has a function of performing product-sum operation of the weight data and input data input through the driver circuit. The product-sum operation circuit and the driver circuit each include a second transistor. The second transistor contains silicon in a channel formation region. The first transistor and the second transistor are stacked. 1. A semiconductor device comprising:a CPU; andan accelerator,wherein the accelerator comprises a first memory circuit, a driver circuit, and a product-sum operation circuit,wherein the first memory circuit comprises a first data retention portion, a second data retention portion, and a data reading portion,wherein the first data retention portion, the second data retention portion, and the data reading portion each comprise a first transistor,wherein the first transistor comprises a first semiconductor layer comprising a metal oxide in a channel formation region,wherein first data stored in the first data retention portion and second data stored in the second data retention portion are each weight data input to the product-sum operation circuit,wherein the product-sum operation circuit is configured to perform product-sum operation of the weight data and input data input through the driver circuit,wherein the product-sum operation circuit and the ...

IMAGE READING DEVICE

An image reading device includes: a first reading unit that is provided at an intermediate position of a transport path and that reads an image of a document transported on the transport path; and a transport unit that is disposed on the transport path further upstream than the first reading unit and that transports the document to the first reading unit. The transport unit includes a third driving roller and third driven rollers that hold the document between the third driving roller and the third driven rollers. The third driving roller is provided on a frame main body, and the third driven rollers are provided on a holder member. When a cover is displaced from a closed position to an open position, the holder member is moved so as to separate the third driven rollers from the third driving roller. 1. An image reading device comprising:a medium support portion that supports a medium;a supply roller that supplies the medium;a transport path through which the medium supplied by the supply roller passes;a cover that is displaced between an open position in which the transport path is open and a closed position in which the transport path is closed;a reading unit that reads an image on the medium transported on the transport path; anda transport unit that is disposed on the transport path further upstream than the reading unit and that transports the medium to the reading unit, whereinthe transport unit includesa driving roller, anda driven roller that nips the medium between the driving roller and the driven roller, whereinthe driving roller is provided in a first unit,the driven roller is provided in a second unit, andwhen the cover is displaced from the closed position to the open position, the second unit is moved so as to separate the driven roller away from the driving roller.2. The image reading device according to claim 1 , whereinthe second unit includes a guide portion that guides a movement direction of the second unit when the cover is in the open position ...

METHOD OF PRODUCING COMPOSITE WAFER AND COMPOSITE WAFER

A method of producing a composite wafer including a semiconductor crystal layer, includes forming a sacrificial layer and the semiconductor crystal layer above a semiconductor crystal layer forming wafer in the stated order, etching the semiconductor crystal layer to partially expose the sacrificial layer and dividing the semiconductor crystal layer into a plurality of divided pieces, bonding the semiconductor crystal layer forming wafer and a transfer target wafer made of an inorganic material in such a manner that a first surface of the semiconductor crystal layer forming wafer faces and comes into contact with a second surface of the transfer target wafer, and etching the sacrificial layer to separate the transfer target wafer and the semiconductor crystal layer forming wafer from each other with the semiconductor crystal layer being left on the transfer target wafer. 1. A method of producing a composite wafer including a semiconductor crystal layer , comprising:forming a sacrificial layer and the semiconductor crystal layer above a semiconductor crystal layer forming wafer in the order of the sacrificial layer and the semiconductor crystal layer;etching the semiconductor crystal layer so as to partially expose the sacrificial layer and dividing the semiconductor crystal layer into a plurality of divided pieces;bonding the semiconductor crystal layer forming wafer and a transfer target wafer made of an inorganic material in such a manner that a first surface of the semiconductor crystal layer forming wafer faces a second surface of the transfer target wafer and the first surface comes into contact with the second surface, the first surface being a surface of a layer formed on the semiconductor crystal layer forming wafer, and the second surface being a surface of the transfer target wafer or a surface of a layer formed on the transfer target wafer; andetching the sacrificial layer to separate the transfer target wafer and the semiconductor crystal layer forming ...

SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING SEMICONDUCTOR DEVICE

A novel comparison circuit, a novel amplifier circuit, a novel battery control circuit, a novel battery protection circuit, a power storage device, a semiconductor device, an electric device, and the like are provided. In a semiconductor device, one of a source and a drain of a first transistor is electrically connected to one of a source and a drain of a second transistor and one of a source and a drain of a third transistor; the other of the source and the drain of the third transistor is electrically connected to a first output terminal; and the other of the source and the drain of the second transistor is electrically connected to a second output terminal. The semiconductor device has a function of outputting a comparison result of a signal supplied to a gate of the second transistor and a signal supplied to a gate of the third transistor, from the first output terminal and the second output terminal; and a function of changing the potential output from the first output terminal in accordance with the potential applied to a back gate of the first transistor. 1. A method for operating a semiconductor device comprising a first output terminal , a second output terminal , a first transistor , a second transistor , and a third transistor ,wherein the first transistor comprises a back gate,wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor and one of a source and a drain of the third transistor,wherein the other of the source and the drain of the third transistor is electrically connected to the first output terminal, andwherein the other of the source and the drain of the second transistor is electrically connected to the second output terminal,wherein the semiconductor device has a function of outputting a comparison result of a signal supplied to a gate of the second transistor and a signal supplied to a gate of the third transistor, from the first output terminal and the ...

RECORDING APPARATUS

A recording apparatus includes a apparatus main body, and a unit body that forms a medium transportation path, and is configured to be attachable and detachable with respect to the apparatus main body. The unit body includes a feeding roller that transports a medium, and a driven transportation unit that transmits the drive force of the drive transportation unit to the feeding roller. The unit body is displaceable between a first position at which the driven transmission unit is connected to the drive transmission unit and a second position at which the driven transmission unit is separated from the drive transmission unit. When a user pulls out the medium, the unit body retained at the first position moves from the first position to the second position. 1. A recording apparatus comprising:an apparatus main body that includes a recording head which performs recording on a medium; anda unit body that forms a medium transportation path through which the medium is transported, and is configured to be attachable and detachable with respect to the apparatus main body,wherein the unit body is mounted on a mounting section that is exposed when an openable and closeable opening/closing body provided on the apparatus main body is open, a feeding roller that transports the medium, and', 'a driven transportation unit that is connected to a drive transportation unit which is provided on a side of the apparatus main body to transmit a drive force, and that transmits the drive force of the drive transportation unit to the feeding roller,', 'wherein, in a state where the unit body is mounted on the apparatus main body, the unit body is displaceable between a first position at which the driven transmission unit is connected to the drive transmission unit and a second position at which the driven transmission unit is separated from the drive transmission unit, that is, the unit body is pulled out with respect to the first position,', 'wherein when the closed opening/closing body is ...

METHOD FOR PRODUCING A COMPOSITE WAFER AND A METHOD FOR PRODUCING A SEMICONDUCTOR CRYSTAL LAYER FORMING WAFER

A method for producing a composite wafer by using a forming wafer having a monocrystal layer, the method comprising: 1. A method for producing a composite wafer that has a semiconductor crystal layer on a transfer target wafer by using a semiconductor crystal layer forming wafer , the semiconductor crystal layer forming wafer having a support wafer and a monocrystal layer supported , directly or via an intermediate layer , on the front surface or the back surface of the support wafer , the method comprising:(a) forming, on the monocrystal layer of the semiconductor crystal layer forming wafer, a sacrificial layer and the semiconductor crystal layer in the order of the monocrystal layer, the sacrificial layer, and the semiconductor crystal layer;(b) causing a first front surface that is the front surface of a layer formed on the semiconductor crystal layer forming wafer to face a second front surface that is the front surface of the transfer target wafer or of a layer formed on the transfer target wafer and is to contact the first front surface, and bonding the semiconductor crystal layer forming wafer and the transfer target wafer; and(c) etching the sacrificial layer, and separating the semiconductor crystal layer forming wafer from the transfer target wafer in a state that the semiconductor crystal layer is left on the transfer target wafer, whereinthe (a) to the (c) are repeated by using the semiconductor crystal layer forming wafer separated in the (c).2. The method for producing a composite wafer according to claim 1 , the method further comprising claim 1 , before the (a) claim 1 , smoothing the front surface of the monocrystal layer of the semiconductor crystal layer forming wafer.3. The method for producing a composite wafer according to claim 1 , the method further comprising claim 1 , after the (a) and before the (b) claim 1 , etching the semiconductor crystal layer so as to expose a part of the sacrificial layer claim 1 , and dividing the semiconductor ...

SEMICONDUCTOR DEVICE

To provide a semiconductor memory device which can be manufactured with high yield and which can achieve higher integration. A pair of memory cells adjacent to each other in the bit line direction is connected to a bit line through a common contact hole. The pair of memory cells adjacent to each other in the bit line direction shares an electrode connected to the bit line. An oxide semiconductor layer included in the memory cell is provided to overlap with a word line and a capacitor line. A transistor and a capacitor included in the memory cell are each provided to overlap with the bit line connected to the memory cell. 1. A semiconductor device comprising:a semiconductor layer;a first electrode, a second electrode, and a third electrode over the semiconductor layer, wherein the second electrode is between the first electrode and the third electrode;a first insulating film over the first electrode, the second electrode, and the third electrode;a first wiring overlapping the first electrode with the first insulating film therebetween;a second wiring overlapping the semiconductor layer with the first insulating film therebetween, in a first region between the first electrode and the second electrode;a third wiring overlapping the semiconductor layer with the first insulating film therebetween, in a second region between the second electrode and the third electrode;a fourth wiring overlapping the third electrode with the first insulating film therebetween;a second insulating film over the first wiring, the second wiring, the third wiring, and the fourth wiring; anda fifth wiring over the second insulating film and electrically connected to the second electrode through a contact hole in the second insulating film,wherein the first wiring, the second wiring, the third wiring, and the fourth wiring are parallel to one another, andwherein the fifth wiring is perpendicular to the first wiring.2. The semiconductor device according to claim 1 , wherein the first electrode ...

SEMICONDUCTOR DEVICE

A nonvolatile semiconductor device which can be driven at low voltage is provided. A nonvolatile semiconductor device with low power consumption is provided. A Schmitt trigger NAND circuit and a Schmitt trigger inverter are included. Data is held in a period when the supply of power supply voltage is continued, and a potential corresponding to the data is stored at a node electrically connected to a capacitor before a period when the supply of power supply voltage is stopped. By utilizing a change in channel resistance of a transistor whose gate is connected to the node, the data is restored in response to the restart of the supply of power supply voltage. 1. A semiconductor device comprising:a memory circuit portion;a Schmitt trigger inverter;a first transistor;a second transistor;a third transistor; anda capacitor,wherein an input terminal of the Schmitt trigger inverter and one of a source and a drain of the first transistor are electrically connected to the memory circuit portion,wherein an output terminal of the Schmitt trigger inverter is electrically connected to one of a source and a drain of the second transistor,wherein the other of the source and the drain of the second transistor, a first electrode of the capacitor, and a gate of the third transistor are electrically connected to one another,wherein a second electrode of the capacitor and one of a source and a drain of the third transistor are electrically connected to a wiring, andwherein the other of the source and the drain of the third transistor is electrically connected to the other of the source and the drain of the first transistor.2. The semiconductor device according to claim 1 ,wherein the memory circuit portion comprises a latch circuit, andwherein the latch circuit comprises a Schmitt trigger NAND circuit.3. The semiconductor device according to claim 1 ,wherein the memory circuit portion comprises a flip-flop circuit, andwherein the flip-flop circuit comprises a Schmitt trigger NAND circuit ...

IMAGE SENSOR, ELECTRONIC DEVICE, CONTROL DEVICE, CONTROL METHOD, AND PROGRAM

The present technology relates to an image sensor capable of achieving both higher S/N and higher frame rate, an electronic device, a control device, a control method, and a program. 1. An imaging device comprising:a pixel array including a pixel;a signal line coupled to the pixel;a reference signal generator; and a first transistor, a gate of the first transistor coupled to the signal line via first switch circuitry;', 'a second transistor, a gate of the second transistor coupled to the signal line via the first switch circuitry;', 'a third transistor, a gate of the third transistor coupled to the reference signal generator via second switch circuitry; and', 'a fourth transistor, a gate of the fourth transistor coupled to the reference signal generator via the second switch circuitry and wherein a first thickness of a gate oxide film of the first transistor is different from a second thickness of a gate oxide film of the second transistor, wherein the first transistor is formed in a first area of a P well, and wherein the second transistor is formed in a second area of the P well., 'a comparator for coupling to the signal line and the reference signal generator, including2. The imaging device according to claim 1 , wherein the first switch circuitry comprises a first switch circuit configured to couple the signal line to the first transistor.3. The imaging device according to claim 2 , wherein the first switch circuitry comprises a second switch circuit configured to couple the signal line to the second transistor.4. The imaging device according to claim 1 , wherein the second switch circuitry comprises a first switch circuit configured to couple the reference signal generator to the third transistor.5. The imaging device according to claim 4 , wherein the second switch circuitry comprises a second switch circuit configured to couple the reference signal generator to the fourth transistor.6. The imaging device according to claim 1 , wherein the first switch ...

ELECTRONIC DEVICE

An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire. 1. (canceled)2. An imaging device comprising: a photodiode;', 'a first transistor; and', 'a second transistor;, 'a pixel comprisinga first conductive layer;a second conductive layer; anda third conductive layer,wherein a cathode of the photodiode is electrically connected to one of a source and a drain of the first transistor,wherein the other of the source and the drain of the first transistor is electrically connected to a gate electrode of the second transistor,wherein a power source potential is input to one of a source and a drain of the second transistor,wherein a signal is output from the other of the source and the drain of the second transistor,wherein the first conductive layer is configured to connect the other of the source and the drain of the first transistor and the gate electrode of the second transistor electrically,wherein the second conductive layer is a wiring to which a potential is input from an outside of the pixel,wherein the second conductive layer is configured such that a potential of the second conductive layer changes,wherein the third conductive layer is a wiring whose potential is fixed,wherein in a planar view, the first conductive layer comprises a region overlapping the gate electrode of the second transistor, ...

RECORDING APPARATUS

A recording apparatus includes a apparatus main body, and a unit body that forms a medium transportation path, and is configured to be attachable and detachable with respect to the apparatus main body. The unit body includes a feeding roller that transports a medium, and a driven transportation unit that transmits the drive force of the drive transportation unit to the feeding roller. The unit body is displaceable between a first position at which the driven transmission unit is connected to the drive transmission unit and a second position at which the driven transmission unit is separated from the drive transmission unit. When a user pulls out the medium, the unit body retained at the first position moves from the first position to the second position. 1. A recording apparatus comprising:a apparatus main body that includes a recording head which performs recording on a medium; anda unit body that forms a medium transportation path through which the medium is transported, and is configured to be attachable and detachable with respect to the apparatus main body, a feeding roller that transports the medium,', 'a driven roller that nips the medium between the feeding roller and the driven roller, and', 'a driven transportation unit that is connected to a drive transportation unit which is provided on a side of the apparatus main body to transmit a drive force, and that transmits the drive force of the drive transportation unit to the feeding roller,, 'wherein the unit body includes'}wherein, in a state where the unit body is mounted on the apparatus main body, the unit body is displaceable between a first position at which the driven transmission unit is connected to the drive transmission unit and a second position at which the driven transmission unit is separated from the drive transmission unit, that is, the unit body is pulled out with respect to the first position, andwherein when a user pulls out the medium of which a part appears on an outside of the unit body ...

SEMICONDUCTOR DEVICE

To provide a semiconductor device having a novel configuration, in which a malfunction and power consumption are reduced. A data holding circuit which includes a flipflop including first and second latch circuits and a shadow register including a nonvolatile memory portion; and a control signal generation circuit which generates a first control signal supplied to the first latch circuit and a second control signal supplied to the second latch circuit are included. The shadow register is a circuit which controls data saving or data restoring between the first and second latch circuits on the basis of a saving control signal or a restore control signal. The control signal generation circuit is a circuit which generates the first and second control signals at L level in a period during which data is saved or restored, on the basis of a clock signal, the saving control signal, and the restore control signal. 1. A semiconductor device comprising:a first circuit; anda second circuit,wherein the first circuit includes a third circuit and a fourth circuit,wherein the third circuit includes a fifth circuit which is configured to receive data and hold the data,wherein the fourth circuit includes a nonvolatile memory portion,wherein the second circuit is configured to output a third signal to the fifth circuit on the basis of a clock signal, a first signal, and a second signal,wherein the third signal is configured to control operation of the fifth circuit so that the fifth circuit receives data or holds the data,wherein the fourth circuit is configured to save the data of the fifth circuit on the basis of the first signal in a first period and to restore the data to the fifth circuit on the basis of the second signal in a second period, andwherein the third signal is fixed at the same logic level by which the fifth circuit holds the data in the first period and the second period.2. The semiconductor device according to claim 1 ,wherein the third circuit includes a sixth ...

EXTRUDED POLYETHYLENE-BASED RESIN FOAM SHEET AND INTERLEAF SHEET FOR GLASS PLATES

An extruded foam sheet having a foam layer constituted of a base resin containing low density polyethylene as a major component thereof, wherein the foam sheet has an apparent density of 45 to 450 kg/m, an average thickness of 0.03 mm or more and less than 0.3 mm and a dimensional change of −5% to 0% in the extrusion direction when heated at 80° C. for 24 hours and wherein cell walls of the foam layer have an average thickness of 6 to 70 μm. The foam sheet may be used as an interleaf sheet for glass plates. 15-. (canceled)6. An extruded polyethylene-based resin foam sheet having a foam layer constituted of a base resin containing low density polyethylene as a major component thereof ,wherein cell walls of said foam layer have an average thickness of 6 to 70 μm, and{'sup': '3', 'wherein the extruded polyethylene-based resin foam sheet has an apparent density of 45 to 450 kg/m, an average thickness of 0.03 mm or more and less than 0.3 mm and a dimensional change of −5% to 0% in the extrusion direction when heated at 80° C. for 24 hours.'}71. The foam sheet according to claim , wherein the foam sheet has a 25% compression stress of 10 kPa or more in the thickness direction of the extruded polyethylene-based resin foam sheet.81. The foam sheet according to claim , wherein said base resin additionally contains linear low density polyethylene in an amount of 5 to 20% by weight based on the total weight of the low density polyethylene and linear low density polyethylene.91. The foam sheet according to claim , further comprising a resin layer laminated on at least one side of said foam layer.101. An interleaf sheet for glass plates that is formed of the foam sheet according to claim .112. The foam sheet according to claim , wherein said base resin additionally contains linear low density polyethylene in an amount of 5 to 20% by weight based on the total weight of the low density polyethylene and linear low density polyethylene.122. The foam sheet according to claim , ...

DATA DRIVER AND DISPLAY APPARATUS

A data driver for driving data lines of a display panel includes a reference voltage section, a resistance circuit, and a selector section. The reference voltage section has at least three kinds of reference voltage sources for supplying their respective reference voltages, arranged in descending or ascending order of voltage values. The resistance circuit has a plurality of voltage division nodes connected between adjacent reference voltage sources, for dividing the reference voltages. The selector section selects and allows output of one voltage corresponding to an input value of a gradation signal, among the reference voltages or the voltages of the voltage division nodes. When the voltage to be output corresponding to the value of the gradation signal is one of the voltages of the voltage division nodes, the selector section selects at least one reference voltage and subsequently selects the voltage of the corresponding voltage division node. 1. A data driver for driving data lines of a display panel , comprising:a reference voltage section having at least three kinds of reference voltage sources configured to supply their respective reference voltages, the reference voltage sources being arranged in descending or ascending order of voltage values;at least one resistance circuit each having a plurality of voltage division nodes connected between adjacent reference voltage sources, the voltage division nodes dividing the reference voltages; and 'the selector section being configured to, when the voltage to be output corresponding to the value of the gradation signal is one of the voltages of the voltage division nodes, select one of two reference voltages from two reference voltage sources being connected to the resistance circuit including a corresponding voltage division node and subsequently select the voltage of the corresponding voltage division node.', 'a selector section configured to select and allow output of one voltage among the reference voltages or ...

RECORDING APPARATUS

The printer includes a transport unit having a support surface for supporting a medium, a line head recording on the medium by ejecting ink from a nozzle provided on an ejecting surface thereof, a head moving portion for moving the line head along a moving direction with respect to the transport unit, and a first maintenance unit movably provided in a first direction for covering the ejecting surface. The moving direction intersects a horizontal plane at an angle of 45 degrees or less, the first direction intersects the horizontal plane at an angle of 45 degrees or more and less than 90 degrees, and a movement amount of the first maintenance unit in the first direction is equal to or larger than a movement amount of the line head in the moving direction when the printer is installed on a horizontal plane. 1. A recording apparatus comprising:a support portion having a support surface configured to support a medium;a head portion having an ejecting surface that is disposed to face the support surface, and configured to record on the medium supported by the support surface by ejecting liquid from a nozzle provided on the ejecting surface;a head moving portion, along a moving direction in which the head portion advances and retreats with respect to the support portion, configured to move the head portion to a recording position at which recording on the medium is performed and a retreat position away from the support portion with respect to the recording position; anda cap portion configured to move in a first direction that intersects the moving direction, and configured to cover the ejecting surface at a position between the head portion and the support portion, whereinwhen installed on a horizontal plane, the moving direction intersects the horizontal plane at an angle of 45 degrees or less, and the first direction intersects the horizontal plane at an angle of 45 degrees or more and less than 90 degrees, anda movement amount of the cap portion in the first direction ...

Recording apparatus

A printer includes a line head, a transport unit, a head moving unit, a cap unit, and a wiper unit. The head moving unit moves the line head to a recording position and a retracted position along a B direction. The cap unit is configured to move back and forth in an A direction between the line head and the transport unit. The wiper unit is configured to move back and forth in a Y direction intersecting both the B direction and the A direction between the line head and the transport unit. At least a portion of a first movement area in which the cap unit moves and at least a portion of a second movement area in which the wiper unit moves are disposed at an identical position in the B direction.

RECORDING APPARATUS

A printer includes a transport unit configuring a transport route and transporting a medium in a transport direction, a line head having an ejecting surface that faces in a +B direction and is provided with a nozzle for ejecting ink to the medium to be transported in the transport direction, a first maintenance unit capable of covering the ejecting surface, and a cap movement portion moving the first maintenance unit between a cap position where a cap surface of the first maintenance unit covers the ejecting surface and a standby position where the cap surface does not cover the ejecting surface, in which the cap moving portion supports the first maintenance unit with the cap surface facing in an inclined direction between an X direction and a +Z direction. 1. A recording apparatus in which , when three spatial axes orthogonal to each other are an X-axis , a Y-axis , and a Z-axis , respectively , directions along the X-axis , the Y-axis , and the Z-axis are an X direction , a Y direction , and a Z direction , respectively , positive directions along the X-axis , the Y-axis , and the Z-axis toward a positive side are a +X direction , a +Y direction , and a +Z direction , respectively , negative directions along the X-axis , the Y-axis , and the Z-axis toward a negative side are a −X direction , a −Y direction , and a −Z direction , respectively , the Z direction is a vertical direction , an upward direction along the vertical direction is the +Z direction , and a downward direction along the vertical direction is the −Z direction , two spatial axes included in an X-Z plane including the X-axis and the Z-axis , intersecting the X-axis and the Z-axis , and orthogonal to each other are an A-axis and a B-axis , respectively , a direction along the A-axis is an A direction , an upward direction along the A-axis is a +A direction , an opposite direction of the +A direction is a −A direction , a direction along the B-axis is a B direction , a downward direction along the B ...

RECORDING APPARATUS

A printer includes a transport unit, a line head, and a head moving unit. The transport unit supports a medium during transport. The line head performs recording on the medium that is disposed so as to face the transport unit at one or more recording positions of recording on the medium. The head moving unit moves the line head to one or more retreat positions away from the transport unit with respect to the recording position. In addition, the head moving unit moves the line head in a B direction intersecting both an X direction and a Z direction. 1. A recording apparatus comprising:a support portion configured to support a medium during transport;a recording portion disposed so as to face the support portion at one or more recording positions of recording on the medium and configured to perform recording on the medium; anda moving mechanism portion configured to move the recording portion to one or more retreat positions that are away from the support portion with respect to the recording position, whereinthe moving mechanism portion moves the recording portion in a moving direction intersecting both a horizontal direction and a vertical direction.2. The recording apparatus according to claim 1 , whereina transport direction of the medium in a region that includes the support portion and at which recording is performed by the recording portion is an inclined direction intersecting both the horizontal direction and the vertical direction.3. The recording apparatus according to claim 2 , whereinthe moving direction is a direction orthogonal to the transport direction.4. The recording apparatus according to claim 2 , whereinthe moving mechanism portion stops the recording portion at a plurality of the recording positions and a plurality of the retreat positions in the moving direction, andthe recording portion performs recording on the medium at the plurality of the recording positions, andthe recording portion does not perform recording on the medium at the ...