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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 743. Отображено 137.
12-04-2018 дата публикации

OPENING-CLOSING BODY CONTROL DEVICE

Номер: WO2018066550A1
Автор: KISHINO Ryosuke, IKEDA Takayuki, FUEKI Masahiro, KIMURA Takashi
Принадлежит:

An opening-closing body control device comprises: a switching unit that is provided between a power source device and a drive source; a controlling unit that electrically connects or disconnects the power source device and the drive source by controlling the conductive state or the blocked state of the switching unit; a voltage limiting unit that, when the connection between the power supply device and the drive source is blocked, limits the voltage generated by the drive source to a predetermined voltage, wherein the voltage generated by the drive source is generated by the drive source being rotating by an external force; and a current detecting unit that detects the generated current output from the drive source when the generated voltage is being limited to the prescribed voltage. The controlling unit electrically connects the power source device and the drive sources by way of controlling the switching unit to be in the conductive state in response to the generated current being detected ...

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Номер записи: 1
02-09-2020 дата публикации

MODIFIED ETHYLENE-VINYL ALCOHOL COPOLYMER FIBERS

Номер: EP3702497A1
Автор: ONOGI Shoji, NAKATSUKA Hitoshi, KAWAKADO Shinya, IKEDA Takayuki
Принадлежит:

A modified ethylene-vinyl alcohol copolymer fiber includes an ethylene-vinyl alcohol copolymer containing 0.1 to 10 mol% of a modified component and 5 to 55 mol% of ethylene, and has a crystallinity of 25% to 50%.

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Номер записи: 2
21-08-2014 дата публикации

SEMICONDUCTOR LIGHT SOURCE UNIT AND VEHICLE LIGHTING DEVICE

Номер: WO2014126168A1
Автор: IKEDA Takayuki, SUZUKI Yasuo
Принадлежит:

An LED unit (11) is provided with a housing (13) and a left busbar (15) and a right busbar (17) that are accommodated in the housing (13). The left busbar (15) and the right busbar (17) each comprise a first terminal section (53) for connecting the contact section of an LED (19) and a second terminal section (55) for connecting a covered electrical wire. The second terminal section (55) comprises a spring terminal connection structure (89) having the same clamp width as the plate-shaped terminal section of a wedge bulb.

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Номер записи: 3
22-09-2011 дата публикации

LIGHTING DIMMING DEVICE

Номер: WO2011115021A1
Автор: IKEDA Takayuki
Принадлежит:

Disclosed is a lighting dimming device which guarantees a clicking sensation during dimming operation, without complicating the structure of the device. The disclosed lighting dimming device (1) is provided with: a first conductor (41) and a second conductor (51) conductively connected by a conduction plate (31) which moves in a specified course; and a light source (61) which is supplied electricity via the first and second conductors (41, 51). When a point where the conduction plate (31) makes contact with the first conductor (41) changes due to the movement of the conduction plate (31), the resistance amount of an electricity supply channel leading to the light source (61) alters. In the device, the parts of the first and second conductors (41, 51) whereon the conductive plate (31) slides are formed from conductive metallic plates, and an uneven section, which unevenly fits with the conduction plate and thus generates a clicking sensation, is provided on a sliding section whereon the ...

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Номер записи: 4
28-08-2014 дата публикации

INTERIOR ILLUMINATION LAMP

Номер: WO2014129277A1
Автор: IKEDA Takayuki, SUZUKI Yasuo
Принадлежит:

An electrode protection part (42) of a pressure welding cover (40) comprises an excessive displacement prevention section (46) which comes into contact with a spring terminal part (36) to thereby prevent excessive displacement of the spring terminal part (36) in a case where, when a valve (50) is inserted in an insertion space (S) and connected to the spring terminal part (36), the valve (50) is inserted with an inclination larger than a normal insertion angle and thereby the spring terminal part (36) tries to be excessively displaced to the pressure welding cover (40) side.

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Номер записи: 5
09-02-2017 дата публикации

ACTUATOR AND ACTUATOR FOR OPENING/CLOSING VEHICLE DOOR

Номер: WO2017022503A1
Автор: TAKIZAWA Takashi, IKEDA Takayuki, SEKINE Yoshitaka, ISHIKAWA Masazumi
Принадлежит:

This actuator comprises: a tubular yoke (31); an armature (130) that is provided on the inner side of the yoke (31) in the radial direction, and that is provided so as to be rotatable relative to the yoke (31); a screw shaft (60) that is rotated and driven by receiving rotary force of a shaft (33) of the armature (130); a speed reduction gear part (50) that is provided between the shaft (33) and the screw shaft (60), and that reduces the rotation speed of the shaft (33); and a nut member that is cooperatively coupled to the screw shaft (60), and that moves along the axial direction of the screw shaft (60) in association with the rotation of the screw shaft (60). An internal gear (51) of the speed reduction gear part (50) is provided on the inner circumferential surface (31f) of the yoke (31), and a bearing (38B) for rotatably supporting the shaft (33) is provided to the internal gear (51).

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Номер записи: 6
20-09-2018 дата публикации

HEAT PUMP SYSTEM

Номер: WO2018168491A1
Автор: IKEDA Takayuki
Принадлежит:

The present invention provides a technology for achieving, in a so-called hybrid-type heat pump system which is provided with, as a compressor for a refrigerant circuit, an engine-driven compressor and an electric motor-driven compressor, a configuration that is rational and yet incorporates redundancy. An engine control unit 25 which performs operational control on an engine 21 and an electric motor control unit 35 which performs operational control on an electric motor 31 are provided separately as operation control units A. As power supply units B which convert utility power into operating power and supply said operating power to the operation control units A, an engine-side power supply unit 23 which supplies the operating power to the engine control unit 25 and an electric motor-side power supply unit 33 which supplies the operating power to the electric motor control unit 35 are provided separately.

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Номер записи: 7
08-09-2016 дата публикации

ELECTRONIC DEVICE

Номер: US20160261272A1
Автор: Takayuki IKEDA, Munehiro KOZUMA, Takeshi AOKI, IKEDA TAKAYUKI, KOZUMA MUNEHIRO, AOKI TAKESHI, IKEDA Takayuki, KOZUMA Munehiro, AOKI Takeshi
Принадлежит:

A novel electronic device including a reconfigurable circuit is provided. In the electronic device including a reconfigurable circuit capable of executing multi-context operation, a context selection signal is locally generated. For example, a context selection signal is generated in the reconfigurable circuit with the use of context determination data contained in an output of another logic block, for example. The range of application of the context selection signal can be set as appropriate by a user. Thus, multi-context operation performed locally and partly enables efficient use of the circuit. Memory usage can be reduced and its efficiency can be improved compared to the case of using global multi-context driving. Other embodiments may be disclosed and claimed.

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Номер записи: 8
05-03-2020 дата публикации

PORE-FORMING MATERIAL FOR MANUFACTURING POROUS CERAMIC FILTER

Номер: WO2020045184A1
Автор: IKEDA Takayuki
Принадлежит:

... [Problem] In manufacturing porous ceramic filters, the combustion heat of a pore-forming agent brings about a problem of cracking. In order to reduce the heat generation amount, therefore, use of hollow particles and calcination in a low-oxygen atmosphere have been proposed. However, hollow particles are fragile, while equipment should be repaired to provide a low-oxygen atmosphere. The purpose of the present invention is to provide a pore-forming material which comprises solid particles but yet can suppress heat generation even in a conventional calcination step. [Solution] A pore-forming material for manufacturing a porous ceramic filter, which comprises solid particles containing a polymer, said polymer containing, as copolymerization components, 80 mass% or more of a monomer having a spontaneous ignition temperature of 350oC or higher and having one (meth)acryloyl group and 10 mass% or less of a monomer having two or more (meth)acryloyl groups, and also containing 0.5-5 mass% of polyvinyl ...

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Номер записи: 9
21-08-2014 дата публикации

INDOOR LAMP

Номер: WO2014125925A1
Автор: IKEDA Takayuki
Принадлежит:

Provided is an indoor lamp in which an LED light source unit (10) is stopped from rotating in a rotation direction that uses a holding direction as an axis of rotation by the contact section (15a) of the base plate section (15) of a housing (51) being brought into contact with the upper edge of the light source support walls (71, 72) of the housing (51).

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Номер записи: 10
29-12-2016 дата публикации

PROGRAMMABLE LOGIC DEVICE AND SEMICONDUCTOR DEVICE

Номер: US20160380630A1
Автор: Munehiro KOZUMA, Yoshiyuki KUROKAWA, Takayuki IKEDA, Takeshi AOKI, KOZUMA MUNEHIRO, KUROKAWA YOSHIYUKI, IKEDA TAKAYUKI, AOKI TAKESHI, KOZUMA Munehiro, KUROKAWA Yoshiyuki, IKEDA Takayuki, AOKI Takeshi
Принадлежит:

A programmable logic device includes a plurality of programmable logic elements (PLE) whose electrical connection is controlled by first configuration data. Each of The PLEs includes an LUT in which a relationship between a logic level of an input signal and a logic level of an output signal is determined by second configuration data, an FF to which the output signal of the LUT is input, and an MUX. The MUX includes at least two switches each including first and second transistor. A signal including third configuration data is input to a gate of the second transistor through the first transistor. The output signal of the LUT or an output signal of the FF is input to one of a source and a drain of the second transistor.

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Номер записи: 11
28-09-2017 дата публикации

CONTROL DEVICE FOR OPENING AND CLOSING BODIES

Номер: WO2017164106A1
Автор: KIMURA Takashi, KISHINO Ryosuke, FUEKI Masahiro, IKEDA Takayuki
Принадлежит:

A control device for opening and closing bodies that drives a drive source for an opening and closing body that opens and closes an opening of a vehicle comprises a power generation detection unit that detects that the drive source is generating power, and a control unit that controls driving the drive source. The control unit transitions to a sleep state when the opening and closing body stops and wakes from the sleep state and controls the drive source when the power generation detection unit detects that the drive source is generating power.

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Номер записи: 12
04-07-2019 дата публикации

VEHICLE INTERIOR LAMP

Номер: WO2019131526A1
Автор: IKEDA Takayuki, SUZUKI Ken, SASAKI Tomoaki, BABA Kenichi
Принадлежит:

A vehicle interior lamp (1) comprises: a housing (10) that can be attached to the interior ceiling (2) of a vehicle, and has an opening (13); a room light lens (21) disposed in the opening (13); a chamber (17) provided inside the housing (10), the chamber (17) surrounding the opening (13); a light-emitting diode (31) disposed in a corner of the chamber (17), the light-emitting diode (31) emitting light toward the room light lens (21); and a reflector (15) disposed in the chamber (17). The plate thickness of the room light lens (21) decreases moving away from the light-emitting diode (31). A projection (21g) is provided on the room light lens (21).

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Номер записи: 13
21-10-2021 дата публикации

BONE AUGMENTATION STRUCTURE

Номер: WO2021210639A1
Автор: IKEDA Takayuki, HONDA Masaki, ISOBE Yoshihiro, SAKU Taro, ISOBE Takaoki
Принадлежит:

This bone augmentation structure comprises a collagen tube and a collagen structure stored within the collagen tube. The collagen tube has a porosity of 70-98%.

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Номер записи: 14
09-02-2017 дата публикации

ACTUATOR AND ACTUATOR FOR OPENING/CLOSING VEHICLE DOOR

Номер: WO2017022581A1
Автор: TAKIZAWA Takashi, IKEDA Takayuki, SEKINE Yoshitaka, ISHIKAWA Masazumi, MATSUZAKI Hiroshi, TANIGUCHI Arata
Принадлежит:

This actuator comprises: a tubular first housing (10); a motor unit (30) provided inside the first housing (10); and an end damper (38) and a damper member (63) that absorb vibrations and that are respectively provided at the axial-direction ends of the motor unit (30). The motor unit (30) is supported in a floating manner by the first housing (10) via the end damper (38) and the damper member (63).

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Номер записи: 15
01-06-2017 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME

Номер: US20170153474A1
Автор: Yoshiyuki KUROKAWA, Takayuki IKEDA, KUROKAWA YOSHIYUKI, IKEDA TAKAYUKI, KUROKAWA Yoshiyuki, IKEDA Takayuki
Принадлежит:

A semiconductor device includes a photodiode, a first transistor, and a second transistor. The photodiode has a function of supplying a charge corresponding to incident light to a gate of the first transistor, the first transistor has a function of accumulating the charge supplied to the gate, and the second transistor has a function of retaining the charge accumulated in the gate of the first transistor. The second transistor includes an oxide semiconductor.

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Номер записи: 16
20-09-2018 дата публикации

ENGINE SYSTEM

Номер: WO2018168338A1
Автор: NOBUHARA Tomoko, IKEDA Takayuki
Принадлежит:

Provided is an engine system capable of promptly dealing with the occurrence of failure in a power supply part or operation control part. The engine system comprises: an engine 40 for outputting shaft power by burning fuel G; a system body 30 operating by using the shaft power of the engine 40; an operation control part A; and a power supply part B for converting commercial power into operating power and supplying the operating power to the operation control part A. The power supply part B comprises a system body-side power supply part 15 and an engine-side power supply part 25 separate from each other, the system body-side power supply part 15 supplying operating power for controlling operation of the system body 30, and the engine-side power supply part 25 supplying operating power for controlling operation of the engine 40.

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Номер записи: 17
20-04-2017 дата публикации

Semiconductor Device

Номер: US20170110453A1
Автор: Takayuki IKEDA, IKEDA TAKAYUKI, IKEDA Takayuki
Принадлежит: Semiconductor Energy Laboratory Co., Ltd.

A semiconductor device with a small number of transistors is provided. The semiconductor device includes a first transistor, a second transistor, a third transistor, a first wiring, and a second wiring. The first transistor includes a first gate and a second gate. The first gate and the second gate overlap with each other with a semiconductor therebetween. The first wiring and the second wiring are supplied with a high power supply potential and a low power supply potential, respectively. A first terminal of the first transistor is electrically connected to the first gate and the first wiring. A second terminal of the first transistor is electrically connected to the second gate. The second terminal of the first transistor is electrically connected to the second wiring through the second transistor and the third transistor. The first transistor, the second transistor, and the third transistor are preferably n-channel transistors. 1. A semiconductor device comprising:a first transistor;a second transistor;a third transistor;a first wiring; anda second wiring,wherein the first transistor comprises a first gate and a second gate,wherein the first gate and the second gate overlap with each other with a semiconductor therebetween,wherein the first wiring is configured to transmit a high power supply potential,wherein the second wiring is configured to transmit a low power supply potential,wherein a first terminal of the first transistor is electrically connected to the first gate,wherein the first terminal of the first transistor is electrically connected to the first wiring,wherein a second terminal of the first transistor is electrically connected to the second gate,wherein the second terminal of the first transistor is electrically connected to the second wiring through the second transistor and the third transistor, andwherein the first transistor, the second transistor, and the third transistor are n-channel transistors.2. The semiconductor device according to claim ...

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Номер записи: 18
12-04-2018 дата публикации

ACTUATOR, AND ACTUATOR FOR VEHICLE

Номер: WO2018066500A1
Автор: TAKIZAWA Takashi, IKEDA Takayuki
Принадлежит:

This actuator (100) is provided with: a motor section (30) for rotating a drive shaft; a screw shaft provided parallel to the drive shaft and rotationally driven by the rotation of the drive shaft which is transmitted to the screw shaft; a nut member rectilinearly moving in the axial direction of the screw shaft as the screw shaft rotates; a motor housing (112) for containing the motor section (30); and a rod-side stationary housing (111) for containing the screw shaft. The motor housing (112) and the rod-side stationary housing (111) are provided integrally.

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Номер записи: 19
29-08-2019 дата публикации

FABRIC FOR FUSION BONDING AND MULTILAYER BODY COMPRISING SAID FABRIC FOR FUSION BONDING

Номер: WO2019163789A1
Автор: ONOGI Shoji, NAKATSUKA Hitoshi, IKEDA Takayuki, KAWAKADO Shinya
Принадлежит:

A fabric for fusion bonding, which is used for the purpose of fusion bonding a plurality of fabrics with each other. This fabric for fusion bonding is configured such that: fusible fibers, which are composed of a resin that has a melting point of 150°C or less or a softening point of 110°C or less, are used in at least a part of this fabric for fusion bonding; and the air permeability of this fabric for fusion bonding is from 1,000 cm3/cm2·s to 10,000 cm3/cm2·s (inclusive).

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Номер записи: 20
04-07-2019 дата публикации

MODIFIED ETHYLENE-VINYL ALCOHOL COPOLYMER FIBERS

Номер: WO2019131460A1
Автор: ONOGI Shoji, NAKATSUKA Hitoshi, KAWAKADO Shinya, IKEDA Takayuki
Принадлежит:

Modified ethylene-vinyl alcohol copolymer fibers according to the present invention contain a modified ethylene-vinyl alcohol copolymer that contains 0.1-10% by mole of a modification component, while having an ethylene content of 5-55% by mole. The modified ethylene-vinyl alcohol copolymer fibers have a crystallinity of 25-50%.

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Номер записи: 21
09-03-2017 дата публикации

IMAGING DEVICE, METHOD FOR OPERATING THE SAME, MODULE, AND ELECTRONIC DEVICE

Номер: US20170069673A1
Автор: Takayuki IKEDA, IKEDA TAKAYUKI, IKEDA Takayuki
Принадлежит:

An imaging device which can perform imaging with a global shutter system and in which transistors are shared by pixels is provided. The imaging device includes first and second photoelectric conversion elements and first to sixth transistors. Active layers of the first to fourth transistors each include an oxide semiconductor. The imaging device has a configuration in which a reset transistor and an amplifier transistor are shared by a plurality of pixels and can perform imaging with a global shutter system. In addition, the imaging device can be used as a high-speed camera. 1. An imaging device comprising:a first photoelectric conversion element;a second photoelectric conversion element;a first transistor including a first active layer comprising a first oxide semiconductor;a second transistor including a second active layer comprising a second oxide semiconductor;a third transistor including a third active layer comprising a third oxide semiconductor;a fourth transistor including a fourth active layer comprising a fourth oxide semiconductor;a fifth transistor; anda sixth transistor,wherein one of terminals of the first photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor,wherein one of terminals of the second photoelectric conversion element is electrically connected to one of a source and a drain of the second transistor,wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the third transistor,wherein the other of the source and the drain of the second transistor is electrically connected to one of a source and a drain of the fourth transistor, andwherein the other of the source and the drain of the third transistor, the other of the source and the drain of the fourth transistor, one of a source and a drain of the fifth transistor, and a gate of the sixth transistor are electrically connected to each other.2. The imaging device ...

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Номер записи: 22
25-06-2015 дата публикации

CHEMICAL SOLUTION STORAGE CONTAINER, CHEMICAL SOLUTION NOZZLE, LIQUID FILLING METHOD AND LIQUID DISCHARGING METHOD

Номер: WO2015093533A1
Автор: KUMAZAWA Noriko, HARADA Ryo, IKEDA Takayuki, MOTAI Katsuyuki
Принадлежит:

... [Problem] To provide a chemical solution storage container in which a chemical solution storage bag is not damaged or blocked by a chemical solution nozzle. [Solution] The chemical solution storage container (1) is provided with a metal vessel (2) having a top opening (2a), a chemical solution storage bag (10) disposed inside the metal vessel (2), and a pouring member (15) attached to the chemical solution storage bag (10). A chemical solution nozzle (16) is provided inside the chemical solution storage container (1). The chemical solution nozzle (16) has a nozzle body (26), and a nozzle cap (27) having a curved surface (27C).

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Номер записи: 23
30-12-2015 дата публикации

ENGINE SYSTEM

Номер: WO2015198749A1
Автор: IKEDA Takayuki, KANAYA Yoshihisa, OTSUKA Shinichi
Принадлежит:

An engine system of the present invention has a transformer (2) provided with auxiliary machinery output terminals (29a, 29b) at a primary side (21) and power supply voltage connection terminals (26, 27, 28) and is characterized by being provided with: power supply input terminals (31, 32); a plurality of power supply voltage connection terminals (26, 27, 28); a relay terminal (30) connected to any one of the power supply voltage connection terminals; and an overheat protection means (40) in a path connecting the relay terminal (30) and the power supply input terminal (32).

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Номер записи: 24
25-06-2015 дата публикации

OPENING/CLOSING BODY CONTROL DEVICE AND OPENING/CLOSING BODY CONTROL METHOD

Номер: WO2015093514A1
Автор: IKEDA Takayuki, FUEKI Masahiro
Принадлежит:

This opening/closing body control device is provided with: a catching determination means (15) which, on the basis of the value of a current flowing through a motor, determines whether or not catching is occurring in an opening/closing body; a plurality of sensors (51-53) which are disposed while each displaced by a predetermined electric angle, and detect the position of a magnetic pole that a motor (40) has; a counter-clockwise pattern storage unit (14) which stores a counter-clockwise pattern that corresponds to the outputs of the plurality of sensors (51-53) and the displacement by the predetermined electric angle, and is a switching pattern of the energization state of a driving circuit during the counter-clockwise rotation of the motor (40); and a driving instruction means (16) which, on the basis of the outputs of the plurality of sensors (51-53), controls the driving circuit (30) using a clockwise pattern or the counter-clockwise pattern, and when the catching determination means ...

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Номер записи: 25
15-12-2016 дата публикации

OPENING AND CLOSING DEVICE FOR VEHICLES

Номер: WO2016199586A1
Автор: ROPPONGI Hitoshi, IKEDA Takayuki, FUEKI Masahiro, NORO Yasunori
Принадлежит:

An opening and closing device for vehicles that opens and closes an opening and closing body provided on a vehicle comprises: an electric motor to drive the opening and closing body; a position detection unit to detect the position of the opening and closing body; a measuring unit to measure the current flowing to the electric motor when the opening and closing body reaches a prescribed position; a counter to increase a count value on the basis of the current; and a determining unit to stop subsequent opening and closing operations on the opening and closing body for a prescribed time when the count value exceeds a first threshold value.

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Номер записи: 26
27-10-2016 дата публикации

VOLTAGE CONTROLLED OSCILLATOR, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE

Номер: US20160315600A1
Автор: Munehiro KOZUMA, Yoshiyuki KUROKAWA, Takayuki IKEDA, KOZUMA MUNEHIRO, KUROKAWA YOSHIYUKI, IKEDA TAKAYUKI, KOZUMA Munehiro, KUROKAWA Yoshiyuki, IKEDA Takayuki
Принадлежит:

A low-power voltage controlled oscillator is provided. The voltage controlled oscillator includes (2n+1) first circuit components (n is an integer of one or more). An output terminal of the first circuit component in a k-th stage (k is an integer of one or more and 2n or less) is connected to an input terminal of the first circuit component in a (k+1)-th stage. An output terminal of the first circuit component in a (2n+1)-th stage is connected to an input terminal of the first circuit component in a first stage. One of the first circuit components includes a second circuit component and a third circuit component whose input terminal is connected to an output terminal of the second circuit component. The third circuit component includes a first transistor and a second transistor whose source-drain resistance is controlled in accordance with a signal input to a gate through the first transistor.

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Номер записи: 27
22-01-2020 дата публикации

HEAT PUMP SYSTEM

Номер: EP3598014A1
Автор: IKEDA Takayuki
Принадлежит:

Provided is a technique that allows a so-called hybrid heat pump system including, as a compressor for a refrigerant circuit, an engine-driven compressor and an electric-motor-driven compressor to achieve a rational structure with redundancy. According to this technique, the hybrid heat pump system includes: an operation control unit A including an engine control unit 25 controlling operation of an engine 21 and an electric-motor control unit 35 controlling operation of an electric motor 31, which are individually provided; and a power source unit B converting commercial electric power into operating electric power and supplying the operating electric power to the operation control unit A, the power source unit B including an engine-side power source unit 23 supplying the operating electric power to the engine control unit 25 and an electric-motor-side power source unit 33 supplying the operating electric power to the electric-motor control unit 35, which are individually provided.

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Номер записи: 28
19-01-2017 дата публикации

ANALOG ARITHMETIC CIRCUIT, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE

Номер: US20170017285A1
Автор: Yoshiyuki KUROKAWA, Takayuki IKEDA, Shunpei YAMAZAKI, KUROKAWA YOSHIYUKI, IKEDA TAKAYUKI, YAMAZAKI SHUNPEI, KUROKAWA Yoshiyuki, IKEDA Takayuki, YAMAZAKI Shunpei
Принадлежит:

The power consumption of an analog arithmetic circuit is reduced. The analog arithmetic circuit includes a plurality of first circuits. An output terminal of the k-th (k is a natural number) first circuit is connected to an input terminal of the k+1-th first circuit. Each of the first circuits includes a memory circuit which holds an analog signal, a second circuit which performs arithmetic processing using the analog signal, a switch which controls power supply to the second circuit, and a controller. The conduction state of the switch included in the k-th first circuit is controlled by the controller included in the k+1-th first circuit. The arithmetic processing performed by the second circuit included in the k+1-th first circuit is started by the controller included in the k+1-th first circuit. 1. An analog arithmetic circuit comprising a plurality of first circuits ,wherein an output terminal of the k-th (k is a natural number) first circuit is connected to an input terminal of the k+1-th first circuit,wherein each of the first circuits comprises a memory circuit which holds an analog signal, a second circuit which performs arithmetic processing using the analog signal, a switch which controls power supply to the second circuit, and a controller,wherein a conduction state of the switch included in the k-th first circuit is controlled by the controller included in the k+1-th first circuit, andwherein the arithmetic processing performed by the second circuit included in the k+1-th first circuit is started by the controller included in the k+1-th first circuit.2. The analog arithmetic circuit according to claim 1 ,wherein the switch comprises a transistor, andwherein the transistor comprises a channel formation region in an oxide semiconductor film.3. The analog arithmetic circuit according to claim 2 , wherein the oxide semiconductor film contains In claim 2 , Ga claim 2 , and Zn.4. An electronic device comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, ...

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Номер записи: 29
06-06-2018 дата публикации

ACTUATOR AND ACTUATOR FOR OPENING/CLOSING VEHICLE DOOR

Номер: EP3330467A1
Автор: TAKIZAWA Takashi, IKEDA Takayuki, SEKINE Yoshitaka, ISHIKAWA Masazumi
Принадлежит:

Provided is a an actuator, which includes: a tubular yoke (31); an armature (130) that is provided on an inner side of the yoke (31) in a radial direction and is provided to be rotatable with respect to the yoke (31); a screw shaft (60) that receives a rotating force of a shaft (33) of the armature (130) and is driven to rotate; a speed reduction gear part (50) that is provided between the shaft (33) and the screw shaft (60) and reduces a rotation speed of the shaft (33); and a nut member that is connected to the screw shaft (60) and moves in an axial direction of the screw shaft (60) in association with the rotation of the screw shaft (60). An internal gear (51) of the speed reduction gear part (50) is provided on an inner circumferential surface (31f) of the yoke (31), and a bearing (38B) for rotatably supporting the shaft (33) is provided at the internal gear (51).

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Номер записи: 30
06-10-2016 дата публикации

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20160293649A1
Автор: Yoshiyuki KUROKAWA, Takayuki IKEDA, Hikaru TAMURA, Munehiro KOZUMA, Masataka IKEDA, Takeshi AOKI, KUROKAWA YOSHIYUKI, IKEDA TAKAYUKI, TAMURA HIKARU, KOZUMA MUNEHIRO, IKEDA MASATAKA, AOKI TAKESHI, KUROKAWA Yoshiyuki, IKEDA Takayuki, TAMURA Hikaru, KOZUMA Munehiro, IKEDA Masataka, AOKI Takeshi
Принадлежит:

In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.

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Номер записи: 31
09-02-2017 дата публикации

IMAGING DEVICE AND ELECTRONIC DEVICE

Номер: US20170041517A1
Автор: Takayuki IKEDA, IKEDA TAKAYUKI, IKEDA Takayuki
Принадлежит:

An imaging device with low power consumption is provided. A pixel circuit has a configuration of detecting difference data between data of a reference frame and data of a target frame in a pixel, and a peripheral circuit has a configuration of efficiently converting the difference data by A/D conversion so as to obtain high compressibility. Difference data which is encoded by compression is written into a memory element and read sequentially. At this time, the frequency of a clock signal can be lowered in accordance with the amount of data. The read data is expanded and the expanded data is added to the reference frame to constitute an image. 1. An imaging device comprising:a pixel;a first circuit;a second circuit; anda third circuit,wherein the pixel is electrically connected to the first circuit,wherein the first circuit is electrically connected to the second circuit,wherein the second circuit is electrically connected to the third circuit,wherein the pixel is configured to output a first potential held in a charge accumulation portion,wherein the pixel is configured to output a second potential held in the charge accumulation portion,wherein the first potential corresponds to difference data between imaging data of a first frame and imaging data of a second frame,wherein the second potential corresponds to data when the charge accumulation portion is initialized,wherein the first circuit is configured to output a third potential that is obtained by adding an absolute value of a difference between the first potential and the second potential to a reference potential, or subtracting the absolute value from the reference potential,wherein the second circuit is configured to convert the third potential into n (n is a natural number of 1 or more)-bit first digital data,wherein the second circuit is configured to convert a magnitude of the third potential with respect to the reference potential into 1-bit second digital data,wherein the second circuit is configured to ...

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Номер записи: 32
06-07-2017 дата публикации

POLYAMIDE FIBERS, FIBER STRUCTURE USING SAME, AND CLOTHING

Номер: US20170191190A1
Автор: Hitoshi NAKATSUKA, Shinya KAWAKADO, Takayuki IKEDA, Daisuke OHGA, Yasunori MURATE, NAKATSUKA HITOSHI, KAWAKADO SHINYA, IKEDA TAKAYUKI, OHGA DAISUKE, MURATE YASUNORI, NAKATSUKA Hitoshi, KAWAKADO Shinya, IKEDA Takayuki, OHGA Daisuke, MURATE Yasunori
Принадлежит: KURARAY CO., LTD.

Disclosed is a polyamide fiber having a degree of orientation equal to or higher than 0.7 and equal to or lower than 0.85. The polyamide fiber is suitably obtained by forming a polyamide component having high moisture absorbency and a specific soluble component into a conjugated fiber under specific fiber formation conditions.

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Номер записи: 33
18-08-2016 дата публикации

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

Номер: US20160240239A1
Автор: Takayuki IKEDA, Yoshiyuki KUROKAWA, Munehiro KOZUMA, IKEDA TAKAYUKI, KUROKAWA YOSHIYUKI, KOZUMA MUNEHIRO, IKEDA Takayuki, KUROKAWA Yoshiyuki, KOZUMA Munehiro
Принадлежит:

A semiconductor device capable of generating a signal (e.g., a potential signal or a current signal) suitable for usage environment or a purpose. The semiconductor device includes a first memory circuit, a first circuit, and a second memory circuit. The first circuit converts a digital signal input from the first memory circuit into an analog signal. The first memory circuit includes an input node, an output node, a transistor, and a capacitor. The capacitor is electrically connected to the output node. The transistor can control a conduction state between the input node and the output node. An analog signal is input to the input node from the first circuit. The transistor includes an oxide semiconductor layer where a channel formation region is formed.

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Номер записи: 34
29-06-2017 дата публикации

SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE, AND SEMICONDUCTOR WAFER

Номер: US20170186473A1
Автор: Takayuki IKEDA, Yutaka SHIONOIRI, Kiyoshi KATO, Tomoaki ATSUMI, IKEDA TAKAYUKI, SHIONOIRI YUTAKA, KATO KIYOSHI, ATSUMI TOMOAKI, IKEDA Takayuki, SHIONOIRI Yutaka, KATO Kiyoshi, ATSUMI Tomoaki
Принадлежит:

A semiconductor device capable of stably holding data for a long time is provided. A transistor including a back gate is used as a writing transistor of a memory element. In the case where the transistor is an n-channel transistor, a negative potential is supplied to a back gate in holding memory. The supply of the negative potential is stopped while the negative potential is held in the back gate. In the case where an increase in the potential of the back gate is detected, the negative potential is supplied to the back gate.

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Номер записи: 35
04-08-2016 дата публикации

SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE

Номер: US20160226490A1
Автор: Munehiro KOZUMA, Takayuki IKEDA, Yoshiyuki KUROKAWA, Takeshi AOKI, Yuki OKAMOTO, KOZUMA MUNEHIRO, IKEDA TAKAYUKI, KUROKAWA YOSHIYUKI, AOKI TAKESHI, OKAMOTO YUKI, KOZUMA Munehiro, IKEDA Takayuki, KUROKAWA Yoshiyuki, AOKI Takeshi, OKAMOTO Yuki
Принадлежит:

A semiconductor device suitable for low-voltage driving. The semiconductor device includes a first transistor, a second transistor, a power supply line, a circuit, and a memory circuit. The first transistor controls electrical continuity between the circuit and the power supply line. The memory circuit stores data for setting a gate potential of the first transistor. The second transistor controls electrical continuity between an output node of the memory circuit and a gate of the first transistor. The second transistor is a transistor with an ultralow off-state current, for example, an oxide semiconductor transistor. In a period for operating the circuit, a first potential is input to the power supply line and the second transistor is turned off. In a period for updating the gate potential of the first transistor, a second potential is input to the power supply line. The second potential is higher than the first potential.

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Номер записи: 36
20-07-2017 дата публикации

IMAGE DISPLAY SYSTEM, OPERATION METHOD OF THE SAME, AND ELECTRONIC DEVICE

Номер: US20170208254A1
Автор: Takayuki IKEDA, IKEDA TAKAYUKI, IKEDA Takayuki
Принадлежит:

To provide an image display system in which an imaging device and a display device are combined. The image display system includes the imaging device including a plurality of pixel blocks and the display device including a plurality of display regions. Image data obtained in the first imaging mode is displayed on the display device as an image, and then, the imaging device switches to the second imaging mode to obtain data of whether an object is changed or not. If the object is changed, the imaging device switches to the first imaging mode, obtain image data newly, and then display the new image on the display device. If the object is not changed, display of the image stored in the display region is maintained and image rewriting is not performed.

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Номер записи: 37
29-06-2017 дата публикации

IMAGING DEVICE AND ELECTRONIC DEVICE

Номер: US20170186800A1
Автор: Takayuki IKEDA, Naoto KUSUMOTO, IKEDA TAKAYUKI, KUSUMOTO NAOTO, IKEDA Takayuki, KUSUMOTO Naoto
Принадлежит:

An imaging device having a three-dimensional integration structure is provided. A first structure including a transistor including silicon in an active layer or an active region and a second structure including an oxide semiconductor in an active layer are fabricated. After that, the first and second structures are bonded to each other so that metal layers included in the first and second structures are bonded to each other; thus, an imaging device having a three-dimensional integration structure is formed.

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Номер записи: 38
03-11-2016 дата публикации

PROGRAMMABLE LOGIC DEVICE AND SEMICONDUCTOR DEVICE

Номер: US20160322975A1
Автор: Takayuki IKEDA, Yoshiyuki KUROKAWA, IKEDA TAKAYUKI, KUROKAWA YOSHIYUKI, IKEDA Takayuki, KUROKAWA Yoshiyuki
Принадлежит:

Provided is a programmable logic device that includes logic elements arranged in a plurality of columns. Wirings connecting logic elements are arranged between the plurality of columns. Switch circuits that control electrical connections between the wirings and the logic elements are also arranged between the plurality of columns. Each of the switch circuit selects an electrical connection between one of the wirings and an input terminal of one of the logic elements in accordance with configuration data.

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Номер записи: 39
14-09-2017 дата публикации

IMAGING DEVICE, MODULE, AND ELECTRONIC DEVICE

Номер: US20170263661A1
Автор: Takayuki IKEDA, IKEDA TAKAYUKI, IKEDA Takayuki
Принадлежит:

An object is to provide an imaging device with high efficiency of transferring charge corresponding to imaging data. The imaging device includes first to fifth conductors, first and second insulators, an oxide semiconductor, a photoelectric conversion element, and a transistor. The first conductor is in contact with a bottom surface and a side surface of the first insulator. The first insulator is in contact with a bottom surface of the oxide semiconductor. The oxide semiconductor is in contact with bottom surfaces of the second and third conductors and the second insulator. Each of the second and third conductors is in contact with the bottom surface and a side surface of the second insulator. The second insulator is in contact with bottom surfaces of the fourth and fifth conductors. The first conductor has regions overlapped by the fourth and fifth conductors. The second conductor has a region overlapped by the fourth conductor. The third conductor has a region overlapped by the fifth ...

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Номер записи: 40
23-03-2017 дата публикации

SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE

Номер: US20170085264A1
Автор: Munehiro KOZUMA, Takayuki IKEDA, Yoshiyuki KUROKAWA, Takeshi AOKI, Yuki OKAMOTO, KOZUMA MUNEHIRO, IKEDA TAKAYUKI, KUROKAWA YOSHIYUKI, AOKI TAKESHI, OKAMOTO YUKI, KOZUMA Munehiro, IKEDA Takayuki, KUROKAWA Yoshiyuki, AOKI Takeshi, OKAMOTO Yuki
Принадлежит:

A semiconductor device suitable for low-voltage driving. The semiconductor device includes a first transistor, a second transistor, a power supply line, a circuit, and a memory circuit. The first transistor controls electrical continuity between the circuit and the power supply line. The memory circuit stores data for setting a gate potential of the first transistor. The second transistor controls electrical continuity between an output node of the memory circuit and a gate of the first transistor. The second transistor is a transistor with an ultralow off-state current, for example, an oxide semiconductor transistor. In a period for operating the circuit, a first potential is input to the power supply line and the second transistor is turned off. In a period for updating the gate potential of the first transistor, a second potential is input to the power supply line. The second potential is higher than the first potential. 1. (canceled)2. A method for driving a semiconductor device comprising a first transistor; a second transistor and a circuit wherein the second transistor comprises a channel formation region comprising an oxide semiconductor , wherein one of a source and a drain of the second transistor is electrically connected to a gate of the first transistor and wherein one of a source and a drain of the first transistor is electrically connected to the circuit , the method comprising the steps of:inputting a first potential applied to the other of the source and the drain of the second transistor to the gate of the first transistor by turning on the second transistor while applying a second potential to the other of the source and the drain of the first transistor;electrically floating the gate of the first transistor by turning off the second transistor; andchanging a potential of the other of the source and the drain of the first transistor from the second potential to a third potential while the second transistor is in an off-state.3. The method ...

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Номер записи: 41
15-09-2016 дата публикации

PROGRAMMABLE LOGIC DEVICE

Номер: US20160269032A1
Автор: Yoshiyuki KUROKAWA, Takayuki IKEDA, KUROKAWA YOSHIYUKI, IKEDA TAKAYUKI, KUROKAWA Yoshiyuki, IKEDA Takayuki
Принадлежит:

A PLD in which a configuration memory is formed using a nonvolatile memory with a small number of transistors and in which the area of a region where the configuration memory is disposed is reduced is provided. Further, a PLD that is easily capable of dynamic reconfiguration and has a short startup time is provided. A programmable logic device including a memory element, a selector, and an output portion is provided. The memory element includes a transistor in which a channel is formed in an oxide semiconductor film, and a storage capacitor and an inverter which are connected to one of a source and a drain of the transistor. The inverter is connected to the selector. The selector is connected to the output portion.

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Номер записи: 42
05-01-2012 дата публикации

SWITCH AND ILLUMINATION UNIT

Номер: US20120000757A1
Автор: IKEDA Takayuki
Принадлежит: Yazaki Corporation

A switch has a pressing operation part capable of pressing and operating a pressing part, the switch having an LED placed on a flexible printed wiring board and pinched by the pressing operation part and the pressing part, characterized in that the pressing operation part has a transmission part for transmitting light emitted by the LED to a side of an operation surface of said pressing operation part. 1. A switch , comprising:a pressing operation part that is capable of pressing and operating a pressing part;an LED placed on a flexible printed wiring board and pinched by the pressing operation part and the pressing part;wherein the pressing operation part has a transmission part for transmitting light emitted by the LED to a side of an operation surface of the pressing operation part.2. The switch as claimed in claim 1 , wherein the pressing operation part or the pressing part has a joining part for pinching the LED by the pressing operation part and the pressing part and joining the pressing operation part to the pressing part.3. The switch as claimed in claim 1 , wherein the LED is provided just under the pressing operation part and is pinched by the pressing operation part and the pressing part so as to abut on the pressing operation part.4. An illumination unit which includes a switch as claimed in and switches between turn-on and turn-off of an illumination part by pressing and operating said switch claim 1 , characterized in that the flexible printed wiring board has a first connection part for connecting the switch to the illumination part claim 1 , and a second connection part branched from the first connection part by a slit provided in the flexible printed wiring board claim 1 , and the LED is placed on the second connection part and is pinched by the pressing operation part and the pressing part. 1. Field of the InventionThe present invention relates to a switch and an illumination unit.2. Description of the Related ArtConventionally, a switch or an ...

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Номер записи: 43
05-01-2012 дата публикации

INPUT/OUTPUT DEVICE AND DRIVING METHOD THEREOF

Номер: US20120001874A1
Автор: IKEDA Takayuki, KUROKAWA Yoshiyuki
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

An object is to reduce power consumption. An input/output device including: a display selection signal output circuit outputting a display selection signal during a first display mode and stopping outputting the display selection signal during a second display mode; a photodetection reset signal output circuit outputting N (N is a natural number) photodetection reset signals during a first photodetection mode and outputting M (M is a natural number smaller than N) photodetection reset signals during a second photodetection mode; an output selection signal output circuit outputting N output selection signals during the first photodetection mode and outputting M output selection signals during the second photodetection mode; and a photodetector circuit being reset in accordance with a photodetection reset signal, generating data according to an intensity of light entering the photodetector circuit subsequently, and outputting the data as a data signal in accordance with the output selection signal. 1. A method for driving an input/output device comprising the steps of:performing a first photodetection;performing a second photodetection after the first photodetection;detecting an object closed to the input/output device by the second photodetection;performing a third photodetection after the second photodetection; andperforming a fourth photodetection after the third photodetection,wherein a time interval between the first photodetection and the second photodetection is longer than a time interval between the third photodetection and the fourth photodetection.2. The method for driving the input/output device according to claim 1 , further comprising the steps of:performing supply of a first image signal to the input/output device to display a first image;performing supply of a second image signal to the input/output device to display a second image after the supply of the first image signal;performing supply of a third image signal to the input/output device to display ...

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Номер записи: 44
02-02-2012 дата публикации

SEMICONDUCTOR DEVICE AND IC LABEL, IC TAG, AND IC CARD PROVIDED WITH THE SEMICONDUCTOR DEVICE

Номер: US20120024965A1
Автор: IKEDA Takayuki, KAWAE Daisuke, KOZUMA Munehiro
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A charge accumulation circuit having a structure in which a capacitor is divided into a plurality of pieces and the divided capacitors are connected in parallel through switches is provided. The charge accumulation circuit controls the switch provided between the capacitors and thus can dynamically vary electrostatic capacitance of the charge accumulation circuit which applies a voltage to a constant voltage circuit. 1. A semiconductor device comprising:an antenna;a rectifier circuit electrically connected to the antenna;a first capacitor comprising a first electrode electrically connected to the rectifier circuit, and a second electrode electrically connected to a first ground line;a first switch electrically connected to the first electrode, and comprising a first transistor and a first diode, wherein one terminal of the first diode is electrically connected to one of source and drain of the first transistor, and the other terminal of the first diode is electrically connected to the other of source and drain of the first transistor;a second capacitor comprising a third electrode electrically connected to the first switch, and a fourth electrode electrically connected to a second ground line.2. The semiconductor device according to claim 1 , wherein the first switch further comprises:a first comparator electrically connected to a gate of the first transistor, anda resistor electrically connected to one input terminal of the first comparator and the one of source and drain of the first transistor.3. The semiconductor device according to claim 1 , further comprising a second transistor and a second comparator;wherein one of source and drain of the second transistor is electrically connected to the first capacitor and the first switch, andwherein the second comparator is electrically connected to a gate of the second transistor.4. The semiconductor device according to claim 3 , further comprising a logic circuit electrically connected to the other of source and drain ...

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Номер записи: 45
08-03-2012 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20120056861A1
Автор: IKEDA Takayuki, KUROKAWA Yoshiyuki
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

The semiconductor device includes a plurality of photosensors arranged in matrix. The photosensors each include a photoelectric conversion element and an amplifier circuit. A backlight is turned on, an object to be detected is irradiated with light, and the photosensor in a p-th row performs the reset operation and the storage operation. After that, the backlight is turned off, and the photosensor in a (p+1)th row performs the reset operation and the storage operation. Then, the photosensors in all the rows sequentially perform the selection operation. A difference between output signals obtained from the photosensors in adjacent rows is obtained. Using the difference, a captured image of the object is generated and a region where the object exists is detected. The amplifier circuit includes a transistor for holding stored electric charge, in which a channel is formed in an oxide semiconductor layer. 1. A semiconductor device comprising:a first photosensor and a second photosensor,wherein the first photosensor and the second photosensor are adjacent to each other and electrically connected to a wiring,wherein the first photosensor is configured to perform a first reset operation and a first storage operation when a backlight is turned on,wherein the second photosensor is configured to perform a second reset operation and a second storage operation when the backlight is turned off,wherein the first photosensor is configured to perform a first selection operation to output a first output signal to the wiring,wherein the second photosensor is configured to perform a second selection operation to output a second output signal to the wiring,wherein the first selection operation and the second selection operation are sequentially performed after the first storage operation and the second storage operation,wherein each of the first photosensor and the second photosensor comprises a transistor, andwherein a channel of the transistor comprises an oxide semiconductor layer.2. ...

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Номер записи: 46
22-03-2012 дата публикации

SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR DEVICE

Номер: US20120069637A1
Автор: IKEDA Takayuki, KUROKAWA Yoshiyuki
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

An object is to provide a semiconductor memory device which holds data of an SRAM or a flip-flop circuit and holds data in the SRAM while electric power is not supplied from a reader or electric power is not enough, without changing a battery for driving a power supply corresponding to deterioration of the battery with time, and a semiconductor device provided with the semiconductor memory device. An SRAM cell, a decoder connected to the SRAM cell through a word line, a read/write circuit connected to the SRAM cell through the data line, and a power storage unit connected to the SRAM cell are provided. The power storage unit is charged when data is written to or read from the SRAM cell through the data line. 1. A semiconductor memory device comprising:an SRAM cell including a first transistor, a second transistor, a first CMOS circuit and a second CMOS circuit, wherein the first CMOS circuit includes a third transistor and a fourth transistor, and wherein the second CMOS circuit includes a fifth transistor and a sixth transistor;a decoder connected to the SRAM cell through a word line;a read/write circuit connected to the SRAM cell through a first data line and a second data line; anda power storage unit connected to a source or a drain of the sixth transistor,wherein the power storage unit stores up an electric power supplied from the first data line or the second data line through the SRAM cell.2. The semiconductor memory device according to claim 1 , wherein the power storage unit is charged when data is written to or read from the SRAM cell.3. The semiconductor memory device according to claim 1 , wherein the semiconductor memory device comprises a plurality of the SRAM cells claim 1 , and the power storage unit is provided for each of the plurality of the SRAM cells.4. The semiconductor memory device according to claim 1 , wherein the power storage unit is a capacitor.5. The semiconductor memory device according to claim 1 , wherein the power storage unit is a ...

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Номер записи: 47
05-04-2012 дата публикации

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE HAVING THE SAME

Номер: US20120081186A1
Автор: Endo Masami, IKEDA Takayuki, KAWAE Daisuke, KUROKAWA Yoshiyuki
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A semiconductor device includes an antenna circuit for receiving a wireless signal, a power supply circuit generating power by the wireless signal received by the antenna circuit, and a clock generation circuit to which power is supplied. The clock generation circuit includes a ring oscillator which self-oscillates and a frequency divider which adjusts frequency of an output signal of the ring oscillator in an appropriate range. A digital circuit portion is driven by a clock having high frequency accuracy, so that a malfunction such as an incorrect operation or no response is prevented. 1. A semiconductor device comprising:a battery;a power supply circuit generating a first voltage by a power supplied from the battery; anda clock generation circuit to which the first voltage is supplied,wherein the clock generation circuit includes a ring oscillator for generating a self-oscillating signal of a constant period, and a frequency divider for frequency-dividing the self-oscillating signal,wherein the ring oscillator generates the self-oscillating signal by the power supplied from the power supply circuit.2. The semiconductor device according to claim 1 , wherein the battery is formed in a sheet shape.3. The semiconductor device according to claim 1 , wherein the battery is a lithium battery claim 1 , a lithium polymer battery claim 1 , or a lithium ion battery.4. A semiconductor device comprising:a battery;a power supply circuit generating a first voltage by a power supplied from the battery;an antenna for receiving a wireless signal;a data modulation circuit for modulating the wireless signal;a data demodulation circuit for demodulating a signal modulated by the data modulation circuit;a control circuit operationally connected to the data modulation circuit and the data demodulation circuit; anda clock generation circuit to which the first voltage is supplied,wherein the clock generation circuit includes a ring oscillator for generating a self-oscillating signal of a ...

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Номер записи: 48
17-05-2012 дата публикации

INPUT/OUTPUT DEVICE AND DRIVING METHOD THEREOF

Номер: US20120119073A1
Автор: IKEDA Takayuki, KUROKAWA Yoshiyuki
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

An input/output device includes a pixel area; a light emission circuit provided in the pixel area and configured to emit light; and a photodetection circuit provided in the pixel area and configured to generate a voltage having a value corresponding to an intensity of incident light. The light emission circuit includes a drive transistor and a light emitting element. The light emitting element includes a first current terminal electrically connected to the source or the drain of the drive transistor and a second current terminal to which a first voltage is input, and emits light in accordance with a current flowing between the first and second current terminals. The light emission circuit includes a switching element including a first terminal to which a second voltage is input, and a second terminal electrically connected to the first current terminal of the light emitting element. 1. An input/output device comprising:a pixel area including a light emission circuit and a photodetection circuit, wherein the photodetection circuit is configured to generate a voltage having a value corresponding to an intensity of incident light, a drive transistor comprising a source, a drain, and a gate;', 'a light emitting element comprising a first current terminal and a second current terminal, wherein the first current terminal is electrically connected to the source or the drain of the drive transistor, wherein a first voltage is input to the second current terminal, and wherein the light emitting element emits light in accordance with a current flowing between the first current terminal and the second current terminal; and', 'a switching element comprising a first terminal and a second terminal, wherein a second voltage is input to the first terminal, wherein the second terminal is electrically connected to the first current terminal of the light emitting element, and wherein, when an object to be detected is over the pixel area, light emitted from the light emission circuit ...

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Номер записи: 49
31-05-2012 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20120132719A1
Автор: Dembo Hiroki, Endo Masami, IKEDA Takayuki, INOUE Takayuki, KAWAE Daisuke, KOZUMA Munehiro, KUROKAWA Yoshiyuki
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A semiconductor device is provided with a power supply circuit having a function to generate a power supply voltage from a wireless signal and an A/D converter circuit having a function to detect the strength of the wireless signal by an A/D conversion of a voltage generated from the wireless signal. This enables to provide a semiconductor device which does not require replacement of batteries, has few limitations on its physical shape and mass, and has a function to detect a physical position. By formation of the semiconductor device with use of a thin film transistor formed over a plastic substrate, a lightweight semiconductor device, which has flexibility in physical shape and a function to detect a physical location, can be provided at low cost. 1. A semiconductor device comprising:an antenna circuit configured to transmit and receive wireless signals;an analog-to-digital converter circuit configured to convert a signal strength of an input voltage from an analog value to a digital value; and generate the input voltage based on a wireless signal received by the antenna circuit and rectified by the rectifier circuit, and input the input voltage in the analog-to-digital converter circuit, and', 'generate a reference voltage from the wireless signal and input the reference voltage in the analog-to-digital converter circuit,, 'a power supply circuit comprising a rectifier circuit, and configured towherein at least one of the antenna circuit, the analog-to-digital converter circuit and the power supply circuit comprises a thin film transistor.2. The semiconductor device according to claim 1 ,further comprising a logic circuit comprising the analog-to-digital converter circuit,wherein the power supply circuit is further configured to supply a power voltage generated from the wireless signal to the logic circuit.3. A semiconductor device comprising:an antenna circuit configured to transmit and receive wireless signals;an analog-to-digital converter circuit configured ...

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Номер записи: 50
14-06-2012 дата публикации

PHOTODETECTOR CIRCUIT, INPUT DEVICE, AND INPUT/OUTPUT DEVICE

Номер: US20120146027A1
Автор: IKEDA Takayuki, KUROKAWA Yoshiyuki, TAMURA Hikaru
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

An adverse effect of parasitic capacitance on optical data output from a photodetector circuit is suppressed. A photodetector circuit includes a photoelectric conversion element; a first field-effect transistor; a second field-effect transistor; a first conductive layer functioning as a gate of the first field-effect transistor; an insulating layer provided over the first conductive layer; a semiconductor layer overlapping with the first conductive layer with the insulating layer interposed therebetween; a second conductive layer electrically connected to the semiconductor layer; and a third conductive layer electrically connected to the semiconductor layer, whose pair of side surfaces facing each other overlaps with at least one conductive layer including the first conductive layer with the insulating layer interposed therebetween, and which functions as the other of the source and the drain of the first field-effect transistor. 1. A photodetector circuit comprising:a photoelectric conversion element;a first conductive layer;a first insulating layer over the first conductive layer;a first semiconductor layer overlapping with a first portion of the first conductive layer with the first insulating layer interposed therebetween;a second semiconductor layer overlapping with a second portion of the first conductive layer with the first insulating layer interposed therebetween;a second conductive layer electrically connected to a first portion of the first semiconductor layer, a first portion of the second semiconductor layer, and the photoelectric conversion element; anda third conductive layer electrically connected to a second portion of the first semiconductor layer and a second portion of the second semiconductor layer and overlapping with the first portion of the first conductive layer and the second portion of the first conductive layer,wherein the second portion of the first semiconductor layer is located between the first portion of the first semiconductor layer ...

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Номер записи: 51
21-06-2012 дата публикации

Semiconductor Device and Driving Method Thereof

Номер: US20120154337A1
Автор: AOKI Takeshi, IKEDA Takayuki, KUROKAWA Yoshiyuki
Принадлежит:

A semiconductor device with high definition, which includes a plurality of sets each including a photosensor and a display element including a light-emitting element arranged in a matrix is provided, wherein a power supply line electrically connected to the display element also serves as a power supply line electrically connected to the photosensor. Thus, the semiconductor device with high definition can be provided without decreasing the width of each power supply line. Thus, the definition of the semiconductor device can be improved while securing the stability of the potential of the power supply line. The stability of the potential of the power supply line leads to the stability of the driving voltage of the display element and the stability of the driving voltage of the photosensor. Accordingly, the semiconductor device with high definition, high display quality, and high accuracy of imaging or detection of an object can be provided. 1. A semiconductor device comprising:a photosensor; anda display element including a light-emitting element,wherein a power supply line which is electrically connected to the display element including the light-emitting element also serves as a power supply line which is electrically connected to the photosensor.2. A semiconductor device comprising: a photosensor; and', 'a display element including a light-emitting element,, 'a plurality of sets, each of the plurality of sets includingwherein a power supply line which is electrically connected to the display element including the light-emitting element also serves as a power supply line which is electrically connected to the photosensor in one of the plurality of sets.3. The semiconductor device according to claim 2 , wherein the plurality of sets are arranged in a matrix of m (m is a natural number greater than or equal to 2) rows by n (n is a natural number greater than or equal to 2) columns.4. A semiconductor device comprising: a photosensor; and', 'a display element including ...

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Номер записи: 52
05-07-2012 дата публикации

Clock Generation Circuit and Semiconductor Device Including the Same

Номер: US20120173915A1
Автор: Endo Masami, IKEDA Takayuki, KAWAE Daisuke, KUROKAWA Yoshiyuki
Принадлежит:

Objects of the invention are to provide a clock generation circuit and to provide a semiconductor device including the clock generation circuit. The clock generation circuit includes an edge detection circuit, a reference clock generation circuit, a reference clock counter circuit, and a frequency-divider circuit. The reference clock counter circuit is a circuit which outputs a counter value, which is obtained by counting the number of waves of a reference clock signal outputted from the reference clock generation circuit, in a period of time from when the edge detection circuit detects an edge of a signal which is externally inputted to the edge detection circuit to when the edge detection circuit detects the next edge, to the frequency-divider circuit. The frequency-divider circuit is a circuit which frequency-divides the reference clock signal based on the counter value. 112-. (canceled)13. A semiconductor device comprising:a first circuit configured to receive a first clock signal and a first signal and output a second signal; anda second circuit configured to receive the second signal and output a second clock signal,wherein the first circuit is configured to increment a value of the second signal in accordance with the first clock signal,wherein the first circuit is configured to reset the value of the second signal in accordance with the first signal,wherein the second circuit is configured to generate the second clock signal,wherein a cycle of the second clock signal corresponds to a period while the value of the second signal grows by a value, andwherein a first cycle of the second clock signal in a first period is longer than a second cycle of the second clock signal in a second period.14. The semiconductor device according to claim 13 ,wherein the first circuit is configured to keep the value of the second signal when the first clock signal changes in the first period.15. The semiconductor device according to claim 13 , further comprising a third circuit ...

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Номер записи: 53
02-08-2012 дата публикации

TERMINAL MOUNTING CONSTRUCTION AND ELECTRONIC DEVICE

Номер: US20120195014A1
Автор: IKEDA Takayuki
Принадлежит: Yazaki Corporation

A terminal mounting construction includes a housing and a terminal. The housing accommodates a substrate and including a locking portion. The terminal connects the substrate to an electric wire. The terminal includes a conductive portion, a substrate connecting terminal portion, a wire connecting portion and a locked portion. The conductive portion is connected to a pattern on the substrate. The substrate connecting terminal portion holds the substrate together with the conductive portion. The wire connecting portion is connected to the electric wire from an opposite direction to an inserting direction in which the substrate is inserted between the conductive portion and the substrate connecting terminal portion. The locked portion is locked in the locking portion. The housing includes an accommodating portion accommodating the substrate connecting terminal portion so as to receive an end face of the substrate connecting terminal portion which faces to follow the opposite direction. 1. A terminal mounting construction , comprising;a housing configured to accommodate a substrate and including a locking portion;a terminal configured to connect the substrate accommodated in the housing to an electric wire, a conductive portion configured to be connected to a pattern on the substrate;', 'a substrate connecting terminal portion configured to hold the substrate together with the conductive portion in a state where the substrate is inserted between the conductive portion and the substrate connecting terminal portion;', 'a wire connecting portion configured to be connected to the electric wire from an opposite direction to an inserting direction in which the substrate is inserted between the conductive portion and the substrate connecting terminal portion; and', 'a locked portion configured to be locked in the locking portion, and, 'wherein the terminal includeswherein the housing includes an accommodating portion configured to accommodate the substrate connecting terminal ...

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Номер записи: 54
02-08-2012 дата публикации

TERMINAL AND TERMINAL CONNECTING CONSTRUCTION

Номер: US20120196457A1
Автор: IKEDA Takayuki
Принадлежит: Yazaki Corporation

A terminal connecting construction includes a substrate and a terminal. A heat-generating element is mounted on the substrate. A contact portion is provided in the terminal, and is contacted with the heat-generating element. 1. A terminal configured to be connected to a pattern on a substrate on which a heat-generating element is mounted , comprising:a contact portion configured to be connected to the heat-generating element.2. The terminal as set forth in claim 1 , further comprising:a locked portion configured to be locked in a locking portion provided in a housing in which the substrate is provided.3. The terminal as set forth in claim 1 , further comprising:a pair of holding pieces configured to hold the substrate,wherein the contact portion is extended from one of the holding pieces.4. The terminal as set forth in claim 1 , whereinthe heat-generating element is a power transistor.5. A terminal connecting construction claim 1 , comprising:a substrate on which a heat-generating element is mounted;a terminal; anda contact portion provided in the terminal, and contacted with the heat-generating element.6. The terminal connecting construction as set forth in claim 5 , whereinthe substrate is provided in a housing,a locking portion is provided in the housing, andthe terminal includes a locked portion locked in the locking portion.7. The terminal connecting construction as set forth in claim 5 , whereinthe terminal includes a pair of holding pieces which holds the substrate, andthe contact portion is extended from one of the holding pieces.8. The terminal connecting construction as set forth in claim 5 , whereinthe heat-generating element is a power transistor. The present invention is related to a terminal which is connected to a pattern on a substrate on which a heat-generating element is mounted.As Patent Documents 1 and 2 disclose, patterns on a substrate are connected to exterior components via terminals. In terminals disclosed in Patent Documents 1 and 2, a ...

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Номер записи: 55
09-08-2012 дата публикации

SEMICONDUCTOR DEVICE HAVING A PIXEL MATRIX CIRCUIT THAT INCLUDES A PIXEL TFT AND A STORAGE CAPACITOR

Номер: US20120199840A1
Автор: Fukunaga Takeshi, IKEDA Takayuki, KITAKADO Hidehito, KOYAMA Jun, Shibata Hiroshi, Yamazaki Shunpei, YAMAZAKI Yu
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

In a CMOS circuit formed on a substrate , a subordinate gate wiring line (a first wiring line) and main gate wiring line (a second wiring line) are provided in an n-channel TFT. The LDD regions and overlap the first wiring line and not overlap the second wiring line . Thus, applying a gate voltage to the first wiring line forms the GOLD structure, while not applying forms the LLD structure. In this way, the GOLD structure and the LLD structure can be used appropriately in accordance with the respective specifications required for the circuits. 1. A semiconductor device comprising:a pixel over a substrate;a driver circuit over the substrate; a first conductive layer;', 'a first insulating layer over the first conductive layer, the first insulating layer comprising silicon nitride;', 'a second insulating layer over the first insulating layer, the second insulating layer comprising silicon oxide;', 'a first semiconductor layer over the first conductive layer with the first insulating layer and the second insulating layer interposed between the first semiconductor layer and the first conductive layer;', 'a third insulating layer over the first semiconductor layer;', 'a second conductive layer over the third insulating layer, the second conductive layer electrically connected to the first semiconductor layer;', 'a third conductive layer over the third insulating layer, the third conductive layer electrically connected to the first semiconductor layer;', 'a fourth insulating layer over the second conductive layer and the third conductive layer; and', 'a pixel electrode over the fourth insulating layer, the pixel electrode electrically connected to the third conductive layer through a hole of the fourth insulating layer,', 'wherein a channel formation region of the first semiconductor layer and the second conductive layer overlap with each other,', 'wherein the first semiconductor layer comprises a crystalline silicon,, 'wherein the pixel comprises a fourth conductive ...

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Номер записи: 56
30-08-2012 дата публикации

DISPLAY DEVICE

Номер: US20120217515A1
Автор: AOKI Takeshi, IKEDA Takayuki, KOZUMA Munehiro, Nakagawa Takashi, Yamazaki Shunpei
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A display device includes a pixel area including pixels arranged in a matrix and having a horizontal resolution of 350 ppi or more and a color filter layer overlapping with the pixel area. The pixels each include a first transistor whose gate is electrically connected to a scan line and whose one of a source and a drain is electrically connected to a signal line; a second transistor whose gate is electrically connected to the other of the source and the drain of the first transistor and whose one of a source and a drain is electrically connected to a current-supplying line; and a light-emitting element electrically connected to the other of the source and the drain of the second transistor. The first and second transistors each have a channel formation region including a single crystal semiconductor. 1. A display device comprising:a pixel area comprising pixels arranged in a matrix and having a horizontal resolution of 350 ppi or more, the pixels each comprising a first transistor, a second transistor and a light-emitting element; anda color filter layer overlapping with the pixel area,wherein a gate of the first transistor is electrically connected to a first line,wherein one of a source and a drain of the first transistor is electrically connected to a second line,wherein a gate of the second transistor is electrically connected to the other of the source and the drain of the first transistor,wherein one of a source and a drain of the second transistor is electrically connected to the light-emitting element,wherein the other of the source and the drain of the second transistor is electrically connected to a third line,wherein each of the first transistor and the second transistor comprises a channel formation region comprising a single crystal semiconductor, andwherein the light-emitting element is configured to emit white light.2. The display device according to claim 1 ,wherein the pixels each further comprises a capacitor,wherein a first electrode of the ...

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Номер записи: 57
17-01-2013 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME

Номер: US20130016035A1
Автор: IKEDA Takayuki
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

An image sensor is provided which is capable of holding data for one frame period or longer and conducting a difference operation with a small number of elements. A photosensor is provided in each of a plurality of pixels arranged in a matrix, each pixel accumulates electric charge in a data holding portion for one frame period or longer, and an output of the photosensor changes in accordance with the electric charge accumulated in the data holding portion. As a writing switch element for the data holding portion, a transistor with small leakage current (sufficiently smaller than 1×10A) is used. As an example of the transistor with small leakage current, there is a transistor having a channel formed in an oxide semiconductor layer. 1. A semiconductor device comprising: a photodiode;', 'a first capacitor;', 'a second capacitor;', 'a first transistor;', 'a second transistor;', 'a third transistor; and', 'a data holding portion,, 'a plurality of pixels arranged in a matrix, each of the plurality of pixels being electrically connected to first to seventh wirings and comprisingwherein a cathode of the photodiode is electrically connected to the first wiring,wherein an anode of the photodiode is electrically connected to a first electrode of the first capacitor,wherein a first electrode of the second capacitor is electrically connected to the third wiring,wherein one of a source and a drain of the first transistor is electrically connected to the second wiring,wherein a gate of the first transistor is electrically connected to the sixth wiring,wherein one of a source and a drain of the second transistor is electrically connected to the fourth wiring,wherein the other of the source and the drain of the second transistor is electrically connected to one of a source and a drain of the third transistor,wherein the other of the source and the drain of the third transistor is electrically connected to the seventh wiring,wherein a gate of the third transistor is electrically ...

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Номер записи: 58
30-05-2013 дата публикации

DISPLAY DEVICE AND ELECTRONIC DEVICE

Номер: US20130135277A1
Автор: IKEDA Takayuki, Nakagawa Takashi
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

To suppress enlargement of pixel area even in the case of reducing current supplied to an electroluminescent element. A switch transistor, a first driving transistor, an electroluminescent element, and a second driving transistor provided between the first driving transistor and the electroluminescent element are included. A power supply potential is supplied to a gate of the second driving transistor. Drain current of the second driving transistor is controlled by the first driving transistor and the second driving transistor, so that a value of current supplied to the electroluminescent element is controlled. 2. The display device according to claim 1 ,wherein a conductivity type of the first transistor is a same as a conductivity type of the second transistor.3. The display device according to claim 1 ,wherein the first transistor comprises a first semiconductor layer comprising a channel formation region,wherein the second transistor comprises a second semiconductor layer comprising a channel formation region, andwherein each of the first semiconductor layer and the second semiconductor layer is a single crystal silicon layer.4. The display device according to whose horizontal resolution is more than or equal to 800 ppi.5. An electronic device comprising the display device according to .6. A display device comprising:a first pixel;a second pixel;a first data signal line;a first gate signal line;a second gate signal line; anda power supply line;wherein each of the first pixel and the second pixel comprises a first transistor, a second transistor, a third transistor, an electroluminescent element,wherein a first terminal of the first transistor of each of the first pixel and the second pixel is electrically connected to a first terminal of the second transistor of each of the first pixel and the second pixel,wherein a second terminal of the second transistor of each of the first pixel and the second pixel is electrically connected to a first terminal of the ...

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Номер записи: 59
29-08-2013 дата публикации

IMAGE SENSOR, CAMERA, SURVEILLANCE SYSTEM, AND METHOD FOR DRIVING THE IMAGE SENSOR

Номер: US20130222584A1
Автор: AOKI Takeshi, DAIRIKI Koji, IKEDA Takayuki, SATO Yurika
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Provided is an image sensor having a pixel includes a photoelectric conversion element; a capacitor which is connected between the photoelectric conversion element; a reset circuit which resets a potential of a node between the photoelectric conversion element and the capacitor; an amplifier circuit which outputs a signal corresponding to the potential of the node; and a switch which controls electrical conduction between the amplifier circuit and a vertical signal line. When the node is brought into an electrically floating state, the potential of the optical signal is stored in the node in a state of being inverted. When an optical signal is detected while the potential is stored in the node, the potential of the node increases in accordance with an output potential of the photoelectric conversion element, and thus the potential of the node corresponds to a difference in potential between the optical signals in different light-receiving periods. 1. An image sensor comprising:a vertical signal line;a pixel electrically connected to the vertical signal line; andan analog-digital conversion device electrically connected to the vertical signal line,wherein the pixel includes a photodiode, a first capacitor, a first transistor, a second transistor, a third transistor, a first wiring, a second wiring, a third wiring, and a fourth wiring,wherein one electrode of the first capacitor is electrically connected to an anode of the photodiode,wherein the other electrode of the first capacitor is electrically connected to a gate of the second transistor,wherein a node between the other electrode of the first capacitor and the gate of the second transistor is configured to store a potential corresponding to an amount of electric charge generated in the photodiode,wherein a gate of the first transistor is electrically connected to the first wiring,wherein one of a source and a drain of the first transistor is electrically connected to the node, and the other of the source and the ...

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Номер записи: 60
14-11-2013 дата публикации

Semiconductor device and manufacturing method thereof

Номер: US20130299888A1
Автор: Hikaru Tamura, Masataka Ikeda, Munehiro KOZUMA, Takayuki Ikeda, Takeshi Aoki, Yoshiyuki Kurokawa
Принадлежит: Semiconductor Energy Laboratory Co Ltd

In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.

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Номер записи: 61
28-11-2013 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20130313412A1
Автор: IKEDA Takayuki, KUROKAWA Yoshiyuki, TAMURA Hikaru
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A semiconductor device obtains highly accurate image data regardless of the intensity of incident light. The semiconductor device includes a first photo sensor provided in a pixel, a second photo sensor provided around the pixel, and a controller for setting the drive condition of the first photo sensor in accordance with the intensity of outside light obtained by the second photo sensor. An image is taken after the sensitivity of the first photo sensor is changed in accordance with the drive condition set by the controller. Thus, in the semiconductor device, an image can be taken using the first photo sensor whose sensitivity is optimized in accordance with the intensity of incident light. 1. (canceled)2. A semiconductor device comprising:a first sensor in a pixel;a second sensor out of the pixel;a controller configured to set a drive condition of the first sensor in accordance with intensity of light obtained by the second sensor; 'an element configured to generate an electric signal when receiving light; and', 'wherein the first sensor comprisesa transistor whose gate terminal is electrically connected to one of terminals of the element.3. The semiconductor device according to claim 2 , wherein the element is a photodiode.4. The semiconductor device according to claim 2 , the first sensor and the second sensor are provided so as to be visible through a same surface.5. The semiconductor device according to claim 2 , wherein the pixel includes a pixel electrode.6. The semiconductor device according to claim 2 ,wherein the first sensor includes a semiconductor layer, the semiconductor layer including a first region including an impurity element which imparts n-type conductivity and a second region including an impurity element which imparts p-type conductivity, andwherein the first region and the second region overlap with each other.7. The semiconductor device according to claim 2 , the controller is configured to set the drive condition so that a distance between ...

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Номер записи: 62
28-11-2013 дата публикации

PROGRAMMABLE LOGIC DEVICE AND SEMICONDUCTOR DEVICE

Номер: US20130314124A1
Автор: IKEDA Takayuki, KUROKAWA Yoshiyuki
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Provided is a programmable logic device that includes logic elements arranged in a plurality of columns. Wirings connecting logic elements are arranged between the plurality of columns. Switch circuits that control electrical connections between the wirings and the logic elements are also arranged between the plurality of columns. Each of the switch circuit selects an electrical connection between one of the wirings and an input terminal of one of the logic elements in accordance with configuration data. 1. A programmable logic device comprising:first logic elements arranged in a first column;second logic elements arranged in a second column parallel to the first column;third logic elements arranged in a third column parallel to the first column and the second column, wherein the second column is between the first column and the third column;first wirings between the first column and the second column;second wirings between the first column and the second column;third wirings between the first column and the second column and between the second column and the third column;a first switch circuit between the first column and the second column; anda second switch circuit between the second column and the third column,wherein each of the first wirings, the second wirings, and the third wirings is electrically connected to one of the second logic elements through the first switch circuit,wherein one of the first wirings is electrically connected to an output terminal of one of the first logic elements,wherein one of the second wirings is electrically connected to an output terminal of one of the second logic elements, andwherein each of the third wirings is electrically connected to one of the third logic elements through the second switch circuit.2. The programmable logic device according to claim 1 , further comprising:IO elements arranged in a fourth column parallel to the first column, the second column, and the third column, wherein the first column is between the ...

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Номер записи: 63
05-12-2013 дата публикации

PROGRAMMABLE LOGIC DEVICE

Номер: US20130321025A1
Автор: IKEDA Takayuki, KUROKAWA Yoshiyuki
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A PLD in which a configuration memory is formed using a nonvolatile memory with a small number of transistors and in which the area of a region where the configuration memory is disposed is reduced is provided. Further, a PLD that is easily capable of dynamic reconfiguration and has a short startup time is provided. A programmable logic device including a memory element, a selector, and an output portion is provided. The memory element includes a transistor in which a channel is formed in an oxide semiconductor film, and a storage capacitor and an inverter which are connected to one of a source and a drain of the transistor. The inverter is connected to the selector. The selector is connected to the output portion. 1. A programmable logic device comprising:a first memory element;a selector; andan output portion, a first transistor comprising an oxide semiconductor layer, wherein a channel is formed in the oxide semiconductor layer;', 'a first storage capacitor; and', 'a first inverter,, 'wherein the first memory element compriseswherein one of a source and a drain of the first transistor is electrically connected to the first storage capacitor and an input portion of the first inverter,wherein an output portion of the first inverter is electrically connected to the selector, andwherein the selector is electrically connected to the output portion.2. The programmable logic device according to claim 1 ,wherein a gate of the first transistor is electrically connected to a writing control line, andwherein the other of the source and the drain of the first transistor is electrically connected to a writing data line.3. The programmable logic device according to claim 1 ,wherein the selector comprises a plurality of 1-bit selectors each comprising an input terminal, a second inverter and a second transistor, andwherein conduction between the first memory element and the output portion depends on a conduction state of the second transistor, the conduction state being ...

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Номер записи: 64
05-12-2013 дата публикации

SEMICONDUCTOR DEVICE AND METHOD OF DRIVING THE SAME

Номер: US20130321366A1
Автор: AOKI Takeshi, IKEDA Takayuki, KOZUMA Munehiro, KUROKAWA Yoshiyuki, TAMURA Hikaru
Принадлежит:

To reduce the effect of external light and to improve the accuracy of detecting the location of a touch. In an image-capture period, light emission from a self-light-emitting element is controlled, and imaging data at the time of displaying white on a display screen and imaging data at the time of displaying black on the display screen are output from each sensor pixel. The location of a sensor pixel where a difference between the two pieces of imaging data output from the same sensor pixel is the greatest is detected. Thus, the location of a touch of the object on the display screen is detected with high accuracy. By utilizing a difference between imaging data at the time of reverse display, the effect of external light can be reduced. 1. A semiconductor device comprising: a first transistor;', 'a second transistor;', 'a light-emitting element;', 'a first display pixel control signal line; and', 'a second display pixel control signal line, and, 'a display pixel comprising a third transistor;', 'a light-receiving element; and', 'an image-capture pixel control signal line,, 'a sensor pixel comprisingwherein a gate terminal of the first transistor and the first display pixel control signal line are electrically connected to each other,wherein a gate terminal of the second transistor and the second display pixel control signal line are electrically connected to each other,wherein a gate terminal of the third transistor and the image-capture pixel control signal line are electrically connected to each other,wherein one of a source terminal and a drain terminal of the first transistor and the light-emitting element are electrically connected to each other at a first node,wherein one of a source terminal and a drain terminal of the second transistor and the light-emitting element are electrically connected to each other at the first node, andwherein one of a source terminal and a drain terminal of the third transistor and the light-receiving element are electrically ...

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Номер записи: 65
23-01-2014 дата публикации

MEMORY ELEMENT AND PROGRAMMABLE LOGIC DEVICE

Номер: US20140021474A1
Автор: IKEDA Takayuki
Принадлежит:

To provide a memory element where a desired potential can be stored as data without an increase in the number of power source potentials. The memory element stores data in a node which is brought into a floating state by turning off a transistor a channel of which is formed in an oxide semiconductor layer. The potential of a gate of the transistor can be increased by capacitive coupling between the gate and a source of the transistor. With the structure, a desired potential can be stored as data without an increase in the number of power source potentials. 1. A semiconductor device comprising:a first wiring configured to supply a high power source potential and a low power source potential;a second wiring configured to supply the high power source potential;a third wiring configured to supply the high power source potential and the low power source potential;a first n-channel transistor, one of a source and a drain of which is electrically connected to the first wiring;a second n-channel transistor, a gate of which is electrically connected to the second wiring, one of a source and a drain of which is electrically connected to the third wiring, and the other of the source and the drain of which is electrically connected to a gate of the first n-channel transistor; anda node which is electrically connected to the other of the source and the drain of the first n-channel transistor,wherein the node is brought into a floating state by turning off the first n-channel transistor.2. The semiconductor device according to claim 1 , wherein the first n-channel transistor is a transistor a channel of which is formed in an oxide semiconductor layer.3. The semiconductor device according to claim 2 , wherein the second n-channel transistor is a transistor a channel of which is formed in an oxide semiconductor layer.4. The semiconductor device according to claim 2 , wherein a mobility of the second n-channel transistor is higher than a mobility of the first n-channel transistor.5. ...

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Номер записи: 66
27-02-2014 дата публикации

IMAGING DEVICE AND METHOD FOR DRIVING THE SAME

Номер: US20140054466A1
Автор: IKEDA Takayuki, KUROKAWA Yoshiyuki
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

An imaging device capable of obtaining image data with a small amount of X-ray irradiation is provided. The imaging device obtains an image using X-rays and includes a scintillator and a plurality of pixel circuits arranged in a matrix and overlapping with the scintillator. The use of a transistor with an extremely small off-state current in the pixel circuits enables leakage of electrical charges from a charge accumulation portion to be reduced as much as possible, and an accumulation operation to be performed substantially at the same time in all of the pixel circuits. The accumulation operation is synchronized with X-ray irradiation, so that the amount of X-ray irradiation can be reduced. 1. An imaging device comprising:a scintillator; and a photodiode;', 'a charge accumulation portion;', 'a first transistor;', 'a second transistor; and', 'a third transistor,, 'a plurality of pixel circuits that is arranged in a matrix with plural rows and plural columns and overlaps with the scintillator, the plurality of pixel circuits each comprisingwherein one of a source and a drain of the first transistor is electrically connected to the photodiode,wherein the other of the source and the drain of the first transistor is electrically connected to the charge accumulation portion,wherein a gate of the second transistor is electrically connected to the charge accumulation portion,wherein one of a source and a drain of the second transistor is electrically connected to one of a source and a drain of the third transistor,wherein at least the first transistor includes a channel formation region including an oxide semiconductor,wherein an operation of resetting the charge accumulation portion is performed substantially at the same time in the plurality of pixel circuits,wherein an operation of accumulating an electrical charge by the photodiode is performed substantially at the same time in the plurality of pixel circuits,wherein an operation of reading a signal is sequentially ...

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Номер записи: 67
27-02-2014 дата публикации

RADIATION DETECTION PANEL, RADIATION IMAGING DEVICE, AND DIAGNOSTIC IMAGING DEVICE

Номер: US20140056405A1
Автор: IKEDA Takayuki, KUROKAWA Yoshiyuki
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

To achieve a radiation detection panel capable of outputting a signal for generating an accurate pixel signal regardless of the performance of a conversion unit, a detection circuit that outputs a signal used for generating a pixel signal includes a first output circuit that outputs a signal due to afterglow, and a second output circuit that outputs a signal including both a signal based on radiation emission and a signal due to afterglow. Transistors using an oxide semiconductor material for a channel formation region are used as some transistors included in the first and second output circuits. In the radiation detection panel having this structure, the signal (a first signal or a second signal) can be held in each output circuit; therefore, after all output circuits hold the signal (the first signal or the second signal), the first signal and the second signal can be sequentially output from detection circuits. 1. An imaging device comprising:a detection unit;a conversion unit; anda radiation source,wherein the conversion unit is configured to convert radiation from the radiation source into light,wherein the detection unit comprises a plurality of detection circuits each comprising a first output circuit and a second output circuit,wherein each of the first output circuit and the second output circuit comprises a photoelectric conversion element configured to generate charge in response to light incident from the conversion unit,wherein the first output circuit is configured to generate first data corresponding to an amount of charge generated by the photoelectric conversion element when radiation is not emitted from the radiation source, and hold the first data,wherein the second output circuit is configured to generate second data corresponding to an amount of charge generated by the photoelectric conversion element when radiation is emitted from the radiation source, and hold the second data, andwherein the detection unit is configured to output a first ...

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Номер записи: 68
04-01-2018 дата публикации

DISPLAY DEVICE AND OPERATION METHOD THEREOF, AND ELECTRONIC DEVICE

Номер: US20180005600A1
Автор: IKEDA Takayuki
Принадлежит:

A first circuit generates first display data that is digital data which has information on luminance of an image displayed on a display portion. A second circuit generates second display data that is digital data obtained by converting a digital value of the first display data. A third circuit generates a first analog signal and a second analog signal whose potentials are calculated on the basis of the digital value of the first display data. The potential of the second analog signal is lower than the potential of the first analog signal. A fourth circuit converts the second display data into third display data that is analog data. A potential of the third display data is calculated on the basis of the potential of the first analog signal, the potential of the second analog signal, and a digital value of the second display data. 1. A display device comprising:a first circuit;a second circuit;a third circuit;a fourth circuit; anda display portion;wherein the first circuit is configured to generate first display data,wherein the first display data is digital data which has information on luminance of an image displayed on the display portion,wherein the second circuit is configured to generate second display data,wherein the second display data is digital data which is obtained by converting a digital value of the first display data,wherein the third circuit is configured to generate a first analog signal and a second analog signal whose potentials are calculated based on the digital value of the first display data,wherein the potential of the first analog signal is lower than the potential of the second analog signal,wherein the fourth circuit is configured to convert the second display data into third display data,wherein the third display data is analog data,wherein a potential of the third display data is calculated on the basis of the potential of the first analog signal, the potential of the second analog signal, and a digital value of the second display data, ...

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Номер записи: 69
11-01-2018 дата публикации

OCCUPANT PROTECTION DEVICE

Номер: US20180009403A1
Автор: IKEDA Takayuki, KUROKAWA Yoshiyuki, Yamazaki Shunpei
Принадлежит:

An occupant protection device which can protect an occupant without delay is provided. An image taken by an imaging device is analyzed to judge whether there is an object approaching the subject car. In the case where a collision between the object and the subject car is judged to be inevitable, an airbag device is activated before the collision, whereby the occupant can be protected without delay. By using selenium for a light-receiving element of the imaging device, an accurate image can be obtained even under low illuminance. Imaging in a global shutter system leads to an accurate image with little distortion. This enables more accurate image analysis. 1. An occupant protection device comprising:an imaging device;a control device; andan airbag device, a light-receiving element containing comprising selenium; and', 'a transistor comprising an oxide semiconductor, and, 'wherein the imaging device compriseswherein the control device is configured to predict a collision with the use of an image taken by the imaging device and to activate the airbag device.2. The occupant protection device according to claim 1 , wherein the occupant protection device comprises a plurality of the imaging devices.3. The occupant protection device according to claim 1 , wherein the oxide semiconductor comprises In.4. The occupant protection device according to claim 1 , wherein the oxide semiconductor comprises Zn.5. The occupant protection device according to claim 1 , wherein the imaging device is configured to operate in a global shutter system.6. An occupant protection device comprising:an imaging device;a control device; andan airbag device, a light-receiving element comprising selenium; and', 'a transistor comprising an oxide semiconductor, and, 'wherein the imaging device compriseswherein the control device is configured to predict a collision with the use of an image taken by the imaging device and to activate, before the collision, the airbag device on the basis of the ...

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Номер записи: 70
27-01-2022 дата публикации

COMPOSITE FIBER

Номер: US20220025553A1
Автор: IKEDA Takayuki, KAWAKADO Shinya, NAKATSUKA Hitoshi, ONOGI Shoji
Принадлежит: KURARAY CO., LTD.

The present invention relates to a composite fiber for obtaining a fiber having a strength at 100% elongation of 0.04 cN/dtex or less, 1. A composite fiber for obtaining a fiber having a strength at 100% elongation of 0.04 cN/dtex or less ,wherein the composite fiber is composed of component X comprising a polyvinyl-based thermoplastic elastomer, or a thermoplastic polyurethane elastomer having a glass transition temperature of 0° C. or lower, and component Y which is an easily soluble thermoplastic polymer,wherein the composite ratio (mass ratio) X:Y of the component X and the component Y is within the range of from 90:10 to 50:50, andwherein the composite fiber has a core-sheath structure in which the component X constitutes the core component, and the component Y constitutes the sheath component, in a cross section of the fiber.2. The composite fiber according to claim 1 , wherein the easily soluble thermoplastic polymer is at least one selected from the group consisting of a polyvinyl alcohol-based polymer and an easily soluble polyester-based polymer.3. The composite fiber according to claim 1 , wherein the component X is made of a resin composition comprising the polyvinyl-based thermoplastic elastomer claim 1 , and wherein the resin composition comprises at least the following 1) and 2): a block copolymer (A) composed of a polymer block(s) a) containing at least two vinyl aromatic compounds as a main component(s), and a polymer block(s) b) containing at least one conjugated diene compound as a main component, wherein from 50 to 100% by mass of the block copolymer (A) has a weight average molecular weight of 200,000 or less; and', 'a block copolymer (A′) obtained by hydrogenating the block copolymer (A); and, '1) 100 parts by mass of at least one selected from the group consisting of2) from 50 to 300 parts by mass of a softener for a hydrocarbon-based rubber.4. The composite fiber according to claim 1 , wherein the composite fiber has a single fiber fineness ...

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Номер записи: 71
03-02-2022 дата публикации

TESTING DEVICE

Номер: US20220034851A1
Автор: IKEDA Takayuki, Shishido Hideaki
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A cost of a testing device is reduced. A structure of a testing device is simplified. A testing device capable of testing with higher accuracy is provided. A testing device () has a structure including a sending unit (), a receiving unit (), a control unit (), and a display (). The control unit includes a memory portion () and an arithmetic portion (). The sending unit has a function of generating a pulse signal for a probe () to generate an ultrasonic wave (). The receiving unit has a function of generating a first signal including a first analog data (D) on the basis of the input single input from the probe. The memory portion has a function of storing the first analog data. The arithmetic portion has a function of generating an image signal (S0) output to the display on the basis of the first analog data stored in the memory portion. The display has a function of displaying an image based on the image signal. 1. A testing device comprising a sending unit , a receiving unit , a control unit , and a display ,wherein the control unit comprises a memory portion and an arithmetic portion,wherein the sending unit has a function of outputting a pulse signal for a probe to generate an ultrasonic wave,wherein the receiving unit has a function of generating a first signal including a first analog data on the basis of an input signal input from the probe and outputting it to the control unit,wherein the memory portion has a function of storing the first analog data,wherein the arithmetic portion has a function of generating an image signal output to the display on the basis of the first analog data stored in the memory portion, andwherein the display has a function of displaying an image based on the image signal.2. The testing device according to claim 1 ,wherein the receiving unit comprises an amplifier portion, andwherein the amplifier portion has a function of amplifying a potential of the input signal and generating a potential of the first analog data.3. The testing ...

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Номер записи: 72
18-01-2018 дата публикации

ELECTRONIC DEVICE AND ELECTRONIC SYSTEM

Номер: US20180018035A1
Автор: IKEDA Takayuki, KUROKAWA Yoshiyuki, TAMURA Hikaru, Yamazaki Shunpei
Принадлежит:

One object is to provide a new electronic device which is configured so that a user can read data regardless of a location, input data by directly touching a keyboard displayed on a screen or indirectly touching the keyboard with a stylus pen or the like, and use the input data. A first transistor electrically connected to a reflective electrode and a photo sensor are included over one substrate. A touch-input button displayed on a first screen region of the display portion is displayed as a still image, and a video signal is output so that a moving image is displayed on a second screen region of the display portion. A video signal processing portion supplying different signals between the case where a still image is displayed on the display portion and the case where a moving image is displayed on the display portion is included. 1. (canceled)2. A display device comprising:a display portion; anda scan line driver circuit electrically connected to the display portion,wherein a clock signal is supplied to the scan line driver circuit,wherein the display portion is configured such that a first image is displayed in a first display region while a second image is displayed in a second display region,wherein the display portion is configured such that input is performed by touching the second image, andwherein one frame period comprises a period during which supply of the clock signal is stopped in the scan line driver circuit while the second image is displayed in the second display region.3. The display device according to claim 2 , further comprising a video signal processing portion supplying different signals between the case where the first image is displayed on the display portion and the case where the second image is displayed on the display portion.4. The display device according to claim 2 , wherein the first display region and the second display region each comprises a liquid crystal element.5. The display device according to claim 2 ,wherein the second ...

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Номер записи: 73
03-02-2022 дата публикации

Semiconductor Device and Method For Driving Semiconductor Device

Номер: US20220037323A1
Автор: ENDO Yuta, IKEDA Takayuki, Kato Kiyoshi, Kimura Hajime, Sugao Junpei, Yamazaki Shunpei
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A semiconductor device with a large storage capacity per unit area is provided. 1. A semiconductor device comprising:a substrate;a first oxide layer over the substrate, the first oxide layer comprising a first region, a second region, and a third region positioned between the first region and the second region;a second oxide layer comprising In and Zn;a first conductive layer overlapping with the first oxide layer;a first insulating layer overlapping and being in contact with the first oxide layer and the first conductive layer and surrounding the second oxide layer;a third oxide layer over the first conductive layer;a second conductive layer overlapping with the third oxide layer; anda second insulating layer overlapping and being in contact with the third oxide layer and the second conductive layer and surrounding the second oxide layer,wherein each of the first region and the second region has a lower resistance than the third region.2. The semiconductor device according to claim 1 , wherein the second oxide layer has a shape extending in a direction perpendicular to the substrate.3. The semiconductor device according to claim 1 , further comprising a fourth oxide layer claim 1 ,wherein the fourth oxide layer surrounds the second oxide layer.4. The semiconductor device according to claim 1 , wherein each of the first region claim 1 , the second region and the third region comprises In claim 1 , Ga and Zn.5. The semiconductor device according to claim 1 ,wherein the semiconductor device comprises a first transistor and a second transistor,wherein the first transistor comprises the first oxide layer, the first insulating layer and the first conductive layer, andwherein the second transistor comprises the third oxide layer, the second conductive layer and the second insulating layer.6. The semiconductor device according to claim 5 ,wherein the semiconductor device comprises a memory cell array comprising a plurality of memory cells,wherein one of the plurality of ...

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Номер записи: 74
17-04-2014 дата публикации

Programmable logic device and method for driving programmable logic device

Номер: US20140103958A1
Автор: Takayuki Ikeda, Yoshiyuki Kurokawa
Принадлежит: Semiconductor Energy Laboratory Co Ltd

Configuration is performed in accordance with a plurality of states when power supply voltage is supplied intermittently. At the time of start of supply of power supply voltage with configuration, a programmable logic device is sequentially changed into a first state where configuration data is not set in a configuration memory, a second state where the configuration memory is initialized, and a third state where the configuration data can be set in the configuration memory. At the time of start of supply of power supply voltage without configuration, the programmable logic device is sequentially changed into a fourth state where the configuration data is not set in the configuration memory and the third state. The first to fourth states are switched to any one of the states by control of a first state signal and a second state signal.

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Номер записи: 75
21-01-2016 дата публикации

DISPLAY SYSTEM, IMAGING DEVICE, MONITORING DEVICE, DISPLAY DEVICE, AND ELECTRONIC DEVICE

Номер: US20160021314A1
Автор: IKEDA Takayuki, KUROKAWA Yoshiyuki
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

To provide a display system which enables power consumption to be reduced. An imaging device operates in first and second imaging modes. In the first imaging mode, a digital processing circuit converts a third imaging data captured by a first pixel into a digital data and supplied the data to a display device. In the second imaging mode, an analog processing circuit detects a difference data between first and second imaging data and sets a determination signal to an active value in accordance with the difference data. A display device operates in first and second display modes. In the first display mode, an image data is updated to display an image. In the second display mode, an image is displayed without an update of an image data. The switching of the imaging mode and the display mode is performed by setting the determination signal to an active value.

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Номер записи: 76
22-01-2015 дата публикации

SOLID-STATE IMAGING DEVICE AND SEMICONDUCTOR DISPLAY DEVICE

Номер: US20150021598A1
Автор: IKEDA Takayuki, KUROKAWA Yoshiyuki
Принадлежит:

A solid-state imaging device increases the SN ratio of a signal even when external light intensity is low. The solid-state imaging device includes a sensor circuit that includes a light-receiving element, a first transistor that controls connection between a first wiring and a node in which the amount of accumulated charge is determined by the amount of exposure to the light-receiving element, a second transistor whose on or off state is selected in accordance with the potential of the node, and a third transistor that controls connection between a second wiring and a third wiring together with the second transistor; a central processing unit that selects a first driving method or a second driving method in accordance with external light intensity; and a controller that controls a potential supplied to the gate of the first transistor in accordance with the first driving method or the second driving method. 1. A semiconductor device comprising:a light-receiving element;a first transistor;a second transistor; anda third transistor,wherein one of electrodes of the light-receiving element is electrically connected to a node,wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to the node,wherein a gate of the second transistor is electrically connected to the node,wherein one of a source and a drain of the third transistor is electrically connected to one of a source and a drain of the second transistor,wherein the first transistor comprises an oxide semiconductor layer in a channel formation region, andwherein an oxide layer containing oxygen at a proportion higher than a stoichiometric composition is located over the source electrode, the drain electrode and the oxide semiconductor layer.2. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer comprises In claim 1 , Ga claim 1 , and Zn.3. The semiconductor device according to claim 1 ,wherein the oxide semiconductor layer comprises a ...

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Номер записи: 77
10-02-2022 дата публикации

VEHICLE ALARM DEVICE

Номер: US20220041101A1
Автор: IKEDA Takayuki, KIMURA Kiyotaka, TAMATSUKURI Yuki, Yamazaki Shunpei
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A vehicle alarm device () having a novel structure is provided. The vehicle alarm device () includes a sound-source detection device (), and the sound-source detection device () includes a plurality of microphones () and a delay circuit (). As a transistor included in a signal retention circuit () inside the delay circuit (), a transistor including an oxide semiconductor (OS transistor) is used. By the sound-source detection device (), an extraneous sound is obtained and the sound-source position of the extraneous sound is identified. In the case where it is judged from the relative velocity or the like between the sound source whose position has been identified and the vehicle that the sound source and the vehicle are likely to collide, an acoustic signal for calling attention of the vehicle occupant is output. 1. A vehicle alarm device comprising a sound-source detection device , a control device , and a signal output device ,wherein the sound-source detection device has a function of obtaining an extraneous sound and a function of identifying a sound-source position of the extraneous sound,wherein the control device has a function of obtaining a change of the sound-source position and a function of supplying a signal to the signal output device, andwherein the signal output device has a function of receiving the signal and outputting an acoustic signal.2. The vehicle alarm device according to claim 1 , wherein the acoustic signal is a signal which calls attention of a vehicle occupant.3. The vehicle alarm device according to claim 1 , wherein the control device has a function of obtaining the change of the sound-source position with the sound-source position and a relative velocity between the sound-source position and a vehicle.4. The vehicle alarm device according to claim 1 , further comprising a neural network.5. A vehicle alarm device comprising a sound-source detection device claim 1 , a control device claim 1 , and a signal output device claim 1 ,wherein ...

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Номер записи: 78
10-02-2022 дата публикации

DRIVER ALERT SYSTEM

Номер: US20220041242A1
Автор: IKEDA Takayuki, KATSUI Shuichi
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

To provide a driver alert system capable of improving the safety. A bicycle includes a first transmission circuit transmitting a first ultrasonic wave, a first receiving circuit receiving a second ultrasonic wave, an arithmetic circuit detecting the presence or absence of an object from the second ultrasonic wave, and a second transmission circuit transmitting a third ultrasonic wave. A driver wears a second housing including a second receiving circuit receiving the third ultrasonic wave. The arithmetic circuit includes a first selection circuit selecting a potential based on the second ultrasonic wave at a different timing, a plurality of signal retention circuits retaining a potential based on the second ultrasonic wave, a second selection circuit selecting any one of the plurality of signal retention circuits, and a signal processing circuit to which a signal selected in and output from the second selection circuit is input. The second selection circuit selects the plurality of signal retention circuits at different timings to generate a signal obtained by delaying the second ultrasonic wave. The third ultrasonic wave generated on the basis of the signal is transmitted to the second housing. 1. A driver alert system comprising: a first transmission circuit transmitting a first ultrasonic wave;', 'a first receiving circuit receiving a second ultrasonic wave;', 'an arithmetic circuit detecting the presence or absence of an object from the second ultrasonic wave; and', 'a second transmission circuit transmitting a third ultrasonic wave on the basis of a signal obtained in the arithmetic circuit; and, 'a first housing comprisinga second housing comprising a second receiving circuit receiving the third ultrasonic wave,wherein the arithmetic circuit comprises a first selection circuit selecting a potential based on the second ultrasonic wave at a different timing; a plurality of signal retention circuits retaining a potential based on the second ultrasonic wave; a ...

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Номер записи: 79
29-01-2015 дата публикации

IMAGING DEVICE AND METHOD FOR DRIVING THE SAME

Номер: US20150028335A1
Автор: IKEDA Takayuki, KUROKAWA Yoshiyuki
Принадлежит:

An imaging device capable of obtaining image data with a small amount of X-ray irradiation is provided. The imaging device obtains an image using X-rays and includes a scintillator and a plurality of pixel circuits arranged in a matrix and overlapping with the scintillator. The use of a transistor with an extremely small off-state current in the pixel circuits enables leakage of electrical charges from a charge accumulation portion to be reduced as much as possible, and an accumulation operation to be performed substantially at the same time in all of the pixel circuits. The accumulation operation is synchronized with X-ray irradiation, so that the amount of X-ray irradiation can be reduced. 1. (canceled)2. An imaging device comprising: a gate electrode over an insulting surface;', 'an gate insulating film over the gate electrode;', 'an oxide semiconductor layer over the gate insulating film; and', 'a first electrode and a second electrode over the oxide semiconductor layer,, 'a first transistor, a second transistor, a third transistor, each comprisinga capacitor;a first insulating film over at least the first transistor, the second transistor, the third transistor; 'a second insulating film over the first insulating film and the optical sensor element; and', 'an optical sensor element;'}a scintillator over the second insulating film,wherein the first electrode of the first transistor is electrically connected to a first portion of the optical sensor element with a first wiring through an opening of the first insulating film and an opening of the second insulating film,wherein the second electrode of the first transistor is electrically connected to a gate of the second transistor and the capacitor, andwherein the first electrode of the second transistor is electrically connected to the first electrode of the third transistor.3. The imaging device according to claim 2 ,wherein a first potential and a second potential are applied to a second portion of the optical ...

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Номер записи: 80
25-01-2018 дата публикации

IMAGING DEVICE

Номер: US20180026064A1
Автор: IKEDA Takayuki, KUROKAWA Yoshiyuki
Принадлежит:

An imaging device which offers an image with high quality and is suitable for high-speed operation is provided. The imaging device includes a first region to an n-th region (n is a natural number of 2 or more and 16 or less) each including a first circuit, a second circuit, a third circuit, and a fourth circuit. The first to third circuits each include a transistor in which silicon is used in an active layer or an active region. The fourth circuit includes a photoelectric conversion element and a transistor in which an oxide semiconductor is used in an active layer. The first circuit includes a region overlapping with the fourth circuit. The third circuit includes a region overlapping with the fourth circuit. 1. (canceled)2. An imaging device comprising:a circuit comprising a first region and a second region;a first transistor over the first region;a first photoelectric conversion element over the first transistor, the first photoelectric conversion element comprising a first photoelectric conversion layer;a second transistor over the second region; anda second photoelectric conversion element over the second transistor, the second photoelectric conversion element comprising the first photoelectric conversion layer,wherein each of the first transistor and the second transistor comprises an oxide semiconductor in a channel formation region,wherein the first transistor is electrically connected to the first photoelectric conversion element, andwherein the second transistor is electrically connected to the second photoelectric conversion element.3. The imaging device according to claim 2 ,wherein the first photoelectric conversion element further comprises a first electrode and a light-transmitting conductive layer, andwherein the second photoelectric conversion element further comprises a second electrode and the light-transmitting conductive layer.4. The imaging device according to claim 3 , further comprising an insulating layer between the first electrode and the ...

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Номер записи: 81
10-02-2022 дата публикации

SEMICONDUCTOR DEVICE AND CHARGE CONTROL SYSTEM

Номер: US20220045532A1
Автор: IKEDA Takayuki, ONUKI Tatsuya, Yamazaki Shunpei
Принадлежит:

A structure that includes a circuit for controlling the safe operation of a secondary battery but can overcome space limitations owing to miniaturization of the housing is provided. A charge control circuit is provided over a flexible substrate and bonded to an external surface of the secondary battery. The charge control circuit is electrically connected to at least one of two terminals of the secondary battery and controls charging. To prevent overcharge, both an output transistor of a charging circuit and a blocking switch are brought into off state substantially concurrently. Blocking two paths which connect to the battery can quickly stop charging when overcharge is detected and reduce damage to the battery owing to the overcharge. 1. A charge control system comprising:a secondary battery;a first transmission path which is connected to a first terminal of the secondary battery and through which electric power output from the secondary battery is transmitted at the time of discharging;a charge control circuit which is connected to the first transmission path and over a flexible substrate so as to be in contact with a side surface of the secondary battery;a second transmission path which connects the charge control circuit and a second terminal of the secondary battery;a first switch which blocks the second transmission path;a charging circuit electrically connected to the charge control circuit;a power receiving circuit electrically connected to the charging circuit;an antenna electrically connected to the power receiving circuit;a third transmission path through which electric power is supplied from the power receiving circuit through the charging circuit to the secondary battery at the time of charging; anda second switch which blocks the third transmission path and is an output transistor of the charging circuit,wherein the first switch blocks the second transmission path when the secondary battery is overcharged,wherein in the case where the charge control ...

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Номер записи: 82
17-02-2022 дата публикации

Semiconductor device and battery pack

Номер: US20220052387A1
Автор: Kei Takahashi, Mayumi MIKAMI, Munehiro KOZUMA, Ryota Tajima, Takanori Matsuzaki, Takayuki Ikeda, Yohei MOMMA
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A semiconductor device that detects deterioration of a secondary battery is provided. The semiconductor device includes a power gauge, an anomalous current detection circuit, and a control circuit. The power gauge includes a current divider circuit and an integrator circuit. The anomalous current detection circuit includes a first memory, a second memory, and a first comparator. The integrator circuit can convert a detection current detected at the current divider circuit into a detection voltage by integrating the detection current. The anomalous current detection circuit is supplied with the detection voltage, a first signal at a first time, and a second signal at a second time. The first signal can make the detection voltage at the first time be stored in the first memory and the second signal can make the detection voltage at the second time be stored in the second memory. The first comparator outputs a change from the detection voltage at the first time to the detection voltage at the second time as a first output signal to the control circuit.

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Номер записи: 83
17-02-2022 дата публикации

Battery Protection Circuit, Power Storage Device, and Electric Device

Номер: US20220052535A1
Автор: IKEDA Takayuki, KOZUMA Munehiro, Matsuzaki Takanori, SAITO Seiya, SUZUKI Akio, Yamazaki Shunpei
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A battery protection circuit with a novel configuration and a power storage device including the battery protection circuit are provided. The battery protection circuit includes a switch circuit for controlling charge and discharge of a battery cell; the switch circuit includes a mechanical relay, a first transistor, and a second transistor; the switch circuit has a function of controlling electrical connection between a first terminal and a second terminal; the mechanical relay has a function of breaking electrical connection between the first terminal and the second terminal; the first transistor has a function of supplying first current between the first terminal and the second terminal; the second transistor has a function of supplying second current between the first terminal and the second terminal; and the first current is higher than the second current. 1. A battery protection circuit comprising a switch circuit for controlling charge and discharge of a battery cell ,wherein the switch circuit comprises a mechanical relay, a first transistor, and a second transistor,wherein the switch circuit has a function of controlling electrical connection between a first terminal and a second terminal,wherein the mechanical relay has a function of breaking electrical connection between the first terminal and the second terminal,wherein the first transistor has a function of supplying first current between the first terminal and the second terminal,wherein the second transistor has a function of supplying second current between the first terminal and the second terminal, andwherein the first current is higher than the second current.2. A battery protection circuit comprising a switch circuit for controlling charge and discharge of a battery cell ,wherein the switch circuit comprises a mechanical relay, a first transistor, and a second transistor,wherein the switch circuit has a function of controlling electrical connection between a first terminal and a second terminal, ...

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Номер записи: 84
17-02-2022 дата публикации

OVERDISCHARGE PREVENTION CIRCUIT OF SECONDARY BATTERY AND SECONDARY BATTERY MODULE

Номер: US20220052541A1
Автор: IKEDA Takayuki, KOZUMA Munehiro
Принадлежит:

Rapid degradation an off-leakage current in an overdischarged state is prevented. In order to prevent an overdischarged state, a control circuit with low leakage current includes a transistor using an oxide semiconductor, whereby the characteristics of the secondary battery are retained. In addition, a system in which a control signal generation circuit is also integrated is formed. With this system structure, the control circuit enters a low-power consumption mode in accordance with the circuit operation after an overdischarge is detected. When recovering from an overdischarged state, the control circuit enters a normally-operating mode in accordance with the voltage increase when charging is started. 1. An overdischarge prevention circuit of a secondary battery , comprising:a charging control circuit electrically connected to the secondary battery;a disconnecting transistor between the secondary battery and the charging control circuit;a first transistor whose source is electrically connected to a wiring connecting the secondary battery and the disconnecting transistor;a second transistor connected to a wiring connecting the disconnecting transistor and the charging control circuit; anda third transistor whose drain or source is connected to a gate of the second transistor.2. The overdischarge prevention circuit according to claim 1 , further comprising an inverter claim 1 ,wherein an input of the inverter is connected to a drain of the second transistor, andwherein an output of the inverter is connected to a gate of the first transistor.3. The overdischarge prevention circuit according to claim 2 , wherein charging detection is performed using the second transistor claim 2 , the third transistor claim 2 , and the inverter.4. The overdischarge prevention circuit according to claim 1 , wherein a charging detection circuit included in the overdischarge prevention circuit disconnects electrical connection between the first transistor and the second transistor by ...

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Номер записи: 85
30-01-2020 дата публикации

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20200035726A1
Автор: AOKI Takeshi, Ikeda Masataka, IKEDA Takayuki, KOZUMA Munehiro, KUROKAWA Yoshiyuki, TAMURA Hikaru
Принадлежит:

In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion. 1. (canceled)2. A semiconductor device comprising:a photodiode;first to fourth transistors; anda capacitor,wherein one of a source and a drain of the first transistor is electrically connected to the photodiode,wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor,wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the third transistor,wherein the other of the source and the drain of the first transistor is electrically connected to the capacitor,wherein one of a source and a drain of the second transistor is electrically connected to one of a source and a drain of the fourth transistor, andwherein a channel formation region in the third transistor comprises an oxide semiconductor.3. The semiconductor device according to claim 2 , wherein the photodiode comprises a silicon.4. The semiconductor device according to claim 2 , wherein a channel formation region in the first transistor comprises an oxide semiconductor.5. A semiconductor device comprising:a photodiode;first to fourth transistors; anda capacitor,wherein one of a source and a drain of the first transistor is electrically connected to the photodiode,wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the ...

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Номер записи: 86
08-02-2018 дата публикации

Data processing system

Номер: US20180038699A1
Автор: Takayuki Ikeda
Принадлежит: Semiconductor Energy Laboratory Co Ltd

An object is to provide a novel data processing system. The data processing system includes a portable terminal, a network, a server, and a database. The portable terminal transmits position information to the server through the network. The server transmits, to the portable terminal through the network, a plurality of pieces of object data corresponding to the position information obtained from the database. Imaging data obtained by the portable terminal and the plurality of pieces of object data are compared, and when there is a piece of the object data that does not match the imaging data, the mismatched piece of the object data stored in the database is updated.

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Номер записи: 87
08-02-2018 дата публикации

IMAGING DEVICE, IMAGING MODULE, ELECTRONIC DEVICE, AND IMAGING SYSTEM

Номер: US20180039882A1
Автор: Fukutome Takahiro, IKEDA Takayuki
Принадлежит:

An imaging device connected to a neural network is provided. An imaging device having a neuron in a neural network includes a plurality of first pixels, a first circuit, a second circuit, and a third circuit. Each of the plurality of first pixels includes a photoelectric conversion element. The plurality of first pixels is electrically connected to the first circuit. The first circuit is electrically connected to the second circuit. The second circuit is electrically connected to the third circuit. Each of the plurality of first pixels generates an input signal of the neuron. The first circuit, the second circuit, and the third circuit function as the neuron. The third circuit includes an interface connected to the neural network. 1. An imaging device having a neuron in a neural network , comprising:a plurality of first pixels;a first circuit;a second circuit; anda third circuit,wherein each of the plurality of first pixels comprises a photoelectric conversion element,wherein the photoelectric conversion element is electrically connected to the first circuit,wherein the first circuit is electrically connected to the second circuit,wherein the second circuit is electrically connected to the third circuit,wherein each of the plurality of first pixels generates an input signal of the neuron in the neural network,wherein the first circuit, the second circuit, and the third circuit serve as the neuron, andwherein the third circuit comprises an interface connected to the neural network.2. The imaging device according to claim 1 ,wherein each of the plurality of first pixels is configured to convert received light into an analog signal,wherein the first circuit is configured to amplify the analog signal,wherein the second circuit is configured to add a plurality of amplified analog signals,wherein the third circuit is configured to convert added analog signals into feature data by using an activation function, andwherein the third circuit is configured to determine the ...

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Номер записи: 88
11-02-2016 дата публикации

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

Номер: US20160043716A1
Автор: IKEDA Takayuki, KUROKAWA Yoshiyuki
Принадлежит:

A semiconductor device having excellent data retention characteristics. A transistor with a low off-state current is utilized to save and retain data stored in a memory circuit, and a potential to be applied to a back gate of the transistor is applied from a battery provided for each memory circuit. The potential applied to the back gate of the transistor and a potential for charging the battery are generated in a voltage generation circuit. The battery is charged utilizing power gating of the memory circuit and data retention characteristics is improved. 1. A semiconductor device comprising:a first circuit configured to retain data; a first transistor comprising a first gate, a second gate, a source, and a drain; and', 'a second transistor comprising a gate,', 'wherein the gate of the second transistor is electrically connected to one of the source and the drain of the first transistor through a node, and', 'wherein the second circuit is configured to hold charge corresponding to the data in the node;, 'a second circuit comprisinga battery comprising a first terminal and a second terminal, wherein the second terminal is electrically connected to the second gate of the first transistor;a voltage generation circuit electrically connected to the second terminal of the battery; anda switch electrically connected to the first circuit and a wiring,wherein a first potential is applied to the first circuit through the wiring,wherein a second potential is applied to the first circuit and the first terminal of the battery,wherein a third potential is applied to the second gate of the second transistor and the second terminal of the battery, andwherein the third potential is lower than the second potential.2. The semiconductor device according to claim 1 , wherein the second potential is lower than the first potential.3. The semiconductor device according to claim 1 , wherein the voltage generation circuit is configured to generate the third potential by turning off the ...

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Номер записи: 89
16-02-2017 дата публикации

Input-Output Device and Method for Driving Input-Output Device

Номер: US20170046002A1
Автор: IKEDA Takayuki, KUROKAWA Yoshiyuki
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Accuracy of photodetection is improved. An input-output device includes a light unit including Z (Z is a natural number of 3 or more) first light-emitting diodes that emit light with a wavelength in a visible light range and a second light-emitting diode that emits light with a wavelength in an infrared range; a display circuit that is supplied with a display selection signal, supplied with a display data signal in accordance with the display selection signal, and set to be in a display state based on data of the input display data signal; and Y (Y is a natural number) photodetectors including a filter for absorbing light with a wavelength in a visible light range, supplied with a photodetection control signal is input, and generating data based on the illuminance of incident light in accordance with the input photodetection control signal. 1. (canceled)2. A display device with an infrared optical sensor comprising:a light unit comprising a first light-emitting diode that emits light with a wavelength in a visible light range and a second light-emitting diode that emits light with a wavelength in an infrared range;a plurality of display circuits overlapping with the light unit; anda plurality of photodetectors overlapping with the light unit,wherein the plurality of photodetectors include a filter for absorbing light with a wavelength in a visible light range,wherein the second light-emitting diode is configured not to emit light when the first light-emitting diode emits light,wherein the plurality of display circuits are configured to receive a display selection signal, to receive a display data signal in accordance with the display selection signal, and to set a display state in accordance with the display data signal, andwherein the plurality of photodetectors are configured to generate data based on illuminance of incident light.3. The display device according to claim 2 ,wherein each of the plurality of photodetectors comprises a first transistor, a second ...

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Номер записи: 90
08-05-2014 дата публикации

SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF

Номер: US20140126271A1
Автор: AOKI Takeshi, IKEDA Takayuki, KUROKAWA Yoshiyuki
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

To provide a semiconductor device in which power consumption can be reduced and operation delay due to a stop and a restart of supply of power supply voltage can be suppressed and a driving method thereof. A potential corresponding to data held in a period during which power supply voltage is continuously supplied is saved to a node connected to a capacitor before the supply of power supply voltage is stopped. By utilizing change of channel resistance of a transistor whose gate is the node, data is loaded when the supply of power supply voltage is restarted. 1. A semiconductor device comprising:a volatile memory;a first transistor;a second transistor; anda third transistor,wherein a first terminal of the first transistor is electrically connected to the volatile memory,wherein a second terminal of the first transistor is electrically connected to a gate of the second transistor,wherein a first terminal of the second transistor is electrically connected to a first terminal of the third transistor, andwherein a second terminal of the third transistor is electrically connected to the volatile memory.2. The semiconductor device according to claim 1 ,wherein the first transistor comprises a channel formation region comprising an oxide semiconductor.3. The semiconductor device according to claim 1 ,wherein the volatile memory comprises a first inverter and a second inverter,wherein an input terminal of the first inverter and an output terminal of the second inverter are electrically connected to a first node,wherein an output terminal of the first inverter and an input terminal of the second inverter are electrically connected to a second node,wherein the first terminal of the first transistor is electrically connected to the first node, andwherein the second terminal of the third transistor is electrically connected to the second node.4. The semiconductor device according to claim 1 ,wherein the volatile memory comprises a first inverter and a second inverter,wherein the ...

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Номер записи: 91
13-02-2020 дата публикации

HEAT PUMP SYSTEM

Номер: US20200049390A1
Автор: IKEDA Takayuki
Принадлежит: Yanmar Co., Ltd.

A hybrid heat pump system including, as a compressor for a refrigerant circuit, an engine-driven compressor and an electric-motor-driven compressor to achieve a rational structure with redundancy. The hybrid heat pump system further includes an operation control unit and a power source unit. The operation control unit is comprised of an engine control unit controlling the operation of an engine and an electric-motor control unit controlling the operation of an electric motor, which are individually provided. The power source unit converts commercial electric power into operating electric power and supplies the operating electric power to the operation control unit. The power source unit is comprised of an engine-side power source unit supplying the operating electric power to the engine control unit and an electric-motor-side power source unit supplying the operating electric power to the electric-motor control unit, which are individually provided. 1. A heat pump system comprising:a compressor for a refrigerant circuit in which a refrigerant circulates, the compressor including an engine-driven compressor configured to be driven by an engine to compress the refrigerant and an electric-motor-driven compressor configured to be driven by an electric motor to compress the refrigerant;an operation control unit; anda power source unit configured to convert commercial electric power into operating electric power and supply the operating electric power to the operation control unit, wherein:the operation control unit includes an engine control unit configured to control operation of the engine and an electric-motor control unit configured to control operation of the electric motor, andthe power source unit includes an engine-side power source unit configured to supply operating electric power to the engine control unit and an electric-motor-side power source unit configured to supply operating electric power to the electric-motor control unit, the engine-side power source ...

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Номер записи: 92
14-02-2019 дата публикации

ELECTRONIC DEVICE

Номер: US20190051683A1
Автор: AOKI Takeshi, IKEDA Takayuki, KUROKAWA Yoshiyuki, TAMURA Hikaru
Принадлежит:

An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire. 1. (canceled)2. An electronic device comprising:a photodiode;a first transistor;a second transistor;a third transistor;a first wire;a second wire;a third wire;a fourth wire;a fifth wire;a sixth wire; anda seventh wire,wherein a first electrode of the photodiode is electrically connected to the first wire,wherein a second electrode of the photodiode is electrically connected to one of a source and a drain of the first transistor,wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor,wherein one of a source and a drain of the second transistor is electrically connected to the second wire,wherein the other of the source and the drain of the second transistor is electrically connected to one of a source and a drain of the third transistor,wherein the other of the source and the drain of the third transistor is electrically connected to the third wire,wherein a gate of the first transistor is electrically connected to the fourth wire,wherein a gate of the third transistor is electrically connected to the fifth wire,wherein the first wire and the sixth wire cross each other,wherein the first wire is electrically connected to the sixth wire,wherein the first wire and the fifth ...

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Номер записи: 93
01-03-2018 дата публикации

Display Device and Control Program

Номер: US20180059841A1
Автор: IKEDA Takayuki, OKAMOTO Yuki, Takahashi Kei, Yamazaki Shunpei
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A display device with excellent visibility can be provided. The display device includes a display region displayed by a light-emitting element. In the display region, a point touched by a user is a first point, a point which has been touched by the user prior to the first point is a second point, a vector that starts at the first point and ends at the second point is a first vector, a vector obtained by multiplying the first vector by k (k is a real number) is a second vector, and a point that is the second vector away from the first point is a third point, the display region includes a first region and a second region obtained by excluding the first region from the display region, The first region includes a first circle and a second circle, the center of the first circle is the first point, and the center of the second circle is the third point. The luminance in the first region is higher than the luminance in the second region. 1. A display device comprising a display region displayed by a light-emitting element ,wherein the display region is configured to detect a touch,wherein the display region comprises a first region and a second region obtained by excluding the first region from the display region,wherein the first region comprises a point touched by a user, andwherein a luminance of blue in the second region is lower than a luminance of blue in the first region.2. The display device according to claim 1 , wherein the display region displays a background and text including a plurality of lines.3. A display device comprising a display region displayed by a light-emitting element claim 1 ,wherein the display region is configured to detect a touch,wherein a point touched by a user in the display region is a first point,wherein a point which has been touched by the user prior to the first point is a second point,wherein a vector that starts at the first point and ends at the second point is a first vector,wherein a vector obtained by multiplying the first ...

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Номер записи: 94
10-03-2022 дата публикации

PROTECTION CIRCUIT FOR SECONDARY BATTERY AND SECONDARY BATTERY MODULE

Номер: US20220077705A1
Автор: AOKI Takeshi, IKEDA Takayuki, ISHIZU Takahiko, KOZUMA Munehiro, Matsuzaki Takanori, Takahashi Kei
Принадлежит:

A secondary battery deteriorates due to repeated charging and discharging, which leads to a decrease in a battery voltage and a battery capacity. The lifetime of a secondary battery is prolonged by preventing charging at an excessive charging value that would be caused by deterioration of the secondary battery. By performing charge control in consideration of the degree of deterioration of a secondary battery, a longer lifetime of a secondary battery can be achieved. In charging a secondary battery, a charge control circuit controls a current value to a preset value, and a charging current control circuit (specifically a circuit including an error amplifier) included in a protection circuit determines a current value supplied to the secondary battery. That is, the current value supplied to the secondary battery is controlled by both the charge control circuit and the charging current control circuit that is a part of the protection circuit. 1. A secondary battery module comprising:a secondary battery;an overcharge detection circuit electrically connected to the secondary battery;an overdischarge detection circuit electrically connected to the secondary battery;a first transistor for discharge control electrically connected to the secondary battery; anda second transistor for charge control electrically connected in series to the first transistor,wherein a gate of the second transistor is connected to an output terminal of an error amplifier,wherein the output terminal of the error amplifier is electrically connected to the overcharge detection circuit,wherein a gate of the first transistor is electrically connected to the overdischarge detection circuit,wherein a resistor is included between the secondary battery and the first transistor,wherein a first input terminal of the error amplifier receiving a reference voltage is electrically connected to the secondary battery, andwherein a second input terminal of the error amplifier receiving a feedback signal is ...

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Номер записи: 95
03-03-2016 дата публикации

IMAGING DEVICE AND ELECTRONIC DEVICE

Номер: US20160064443A1
Автор: IKEDA Takayuki, Inoue Hiroki, KUROKAWA Yoshiyuki, OKAMOTO Yuki
Принадлежит:

An imaging device capable of obtaining high-quality imaging data is provided. The imaging device includes a first circuit and a second circuit. The first circuit includes a photoelectric conversion element, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, a first capacitor, a second capacitor, and a third capacitor. The second circuit includes an eighth transistor. Variation in threshold voltage of an amplifier transistor (the fifth transistor) included in the first circuit can be compensated. 1. An imaging device comprising:a photoelectric conversion element;a first transistor;a second transistor;a third transistor;a fourth transistor;a fifth transistor;a sixth transistor;a seventh transistor;an eighth transistor;a first capacitor; anda second capacitor,wherein one terminal of the photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor,wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the seventh transistor,wherein the other of the source and the drain of the first transistor is electrically connected to one terminal of the first capacitor,wherein one of a source and a drain of the second transistor is electrically connected to the other terminal of the first capacitor,wherein the other terminal of the first capacitor is electrically connected to one terminal of the second capacitor,wherein one of a source and a drain of the third transistor is electrically connected to the other terminal of the second capacitor,wherein the other of the source and the drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor,wherein one of a source and a drain of the fifth transistor is electrically connected to the one of the source and the drain of the fourth transistor,wherein a gate of the fifth ...

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Номер записи: 96
03-03-2016 дата публикации

IMAGING DEVICE AND ELECTRONIC DEVICE

Номер: US20160064444A1
Автор: IKEDA Takayuki, Inoue Hiroki, KUROKAWA Yoshiyuki, OKAMOTO Yuki
Принадлежит:

An imaging device capable of obtaining high-quality imaging data is provided. The imaging device includes a first circuit, a second circuit and a third circuit. The first circuit includes a photoelectric conversion element, a plurality of transistors including an amplifier transistor, and a plurality of capacitors. The second circuit includes a transistor. The third circuit includes a resistor and a transistor for controlling a current flowing in the resistor. The output signal of the imaging device is determined in accordance with the current flowing in the resistor. Variations in electrical characteristics of the amplifier transistor included in the first circuit can be compensated. 1. An imaging device comprising: a photoelectric conversion element;', 'a first transistor;', 'a second transistor;', 'a third transistor;', 'a fourth transistor;', 'a fifth transistor;', 'a first capacitor; and', 'a second capacitor;, 'a first circuit comprising;'}a second circuit comprising a sixth transistor; anda third circuit comprising a seventh transistor and a resistor,wherein one terminal of the photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor,wherein the other of the source and the drain of the first transistor is electrically connected to one terminal of the first capacitor,wherein one of a source and a drain of the second transistor is electrically connected to the other terminal of the first capacitor,wherein the other terminal of the first capacitor is electrically connected to one terminal of the second capacitor,wherein one of a source and a drain of the third transistor is electrically connected to the other terminal of the second capacitor,wherein the other of the source and the drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor,wherein a gate of the fourth transistor is electrically connected to the one of the source and the drain of the third ...

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Номер записи: 97
17-03-2022 дата публикации

Display Device and Control Program

Номер: US20220083165A1
Автор: IKEDA Takayuki, OKAMOTO Yuki, Takahashi Kei, Yamazaki Shunpei
Принадлежит: Semiconductor Engergy Laboratory Co., Ltd.

A display device with excellent visibility can be provided. The display device includes a display region displayed by a light-emitting element. In the display region, a point touched by a user is a first point, a point which has been touched by the user prior to the first point is a second point, a vector that starts at the first point and ends at the second point is a first vector, a vector obtained by multiplying the first vector by k (k is a real number) is a second vector, and a point that is the second vector away from the first point is a third point, the display region includes a first region and a second region obtained by excluding the first region from the display region. The first region includes a first circle and a second circle, the center of the first circle is the first point, and the center of the second circle is the third point. The luminance in the first region is higher than the luminance in the second region. 1. A display device comprising;a flexible substrate;a first insulating layer over the flexible substrate;a first semiconductor layer over the first insulating layer;a first conductive layer functioning as one of a source and a drain of a first transistor, the first conductive layer being in contact with a top surface of the first semiconductor layer;a second insulating layer over the first semiconductor layer;a second conductive layer over the second insulating layer;a third conductive layer over the second insulating layer;a second semiconductor layer over the second insulating layer;a third insulating layer over the second semiconductor layer;a fourth conductive layer over the third insulating layer, the fourth conductive layer functioning as a gate electrode of a second transistor;a fourth insulating layer over the fourth conductive layer;a first electrode of a display element over the fourth insulating layer; anda second electrode of the display element over the first electrode,wherein the first conductive layer overlaps with the ...

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Номер записи: 98
24-03-2022 дата публикации

IMAGING DEVICE AND ELECTRONIC DEVICE

Номер: US20220093661A1
Автор: IKEDA Takayuki
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

An imaging device that generates a pulse signal by utilizing photoelectric conversion operation is provided. 1. An imaging device comprising:a circuit comprising a first transistor;a second transistor; anda photoelectric conversion element,wherein the circuit is configured to generate a pulse signal in accordance with an output signal of the photoelectric conversion element, andwherein a second layer comprising the second transistor is stacked over a first layer comprising the first transistor.2. The imaging device according to claim 1 ,wherein the first transistor is electrically connected to the second transistor through a wiring.3. The imaging device according to claim 1 ,wherein the photoelectric conversion element is stacked over the second layer. This application is a continuation of U.S. application Ser. No. 16/618,871, filed Dec. 3, 2019, now allowed, which is incorporated by reference, and is a U.S. National Phase Application under 35 U.S.C. § 371 of International Application PCT/IB2018/053785, filed on May 29, 2018, which is incorporated by reference, and which claims the benefit of a foreign priority application filed in Japan on Jun. 8, 2017, as Application No. 2017-113393.One embodiment of the present invention relates to an imaging device.Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, manufacture, or a composition of matter. Thus, more specifically, a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, a power storage device, a memory device, an imaging device, a driving method thereof, or a manufacturing method thereof can be given as an example of the technical field of one embodiment of the ...

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Номер записи: 99
24-03-2022 дата публикации

SEMICONDUCTOR DEVICE AND OPERATING METHOD OF SEMICONDUCTOR DEVICE

Номер: US20220094177A1
Автор: IKEDA Takayuki, ISHIZU Takahiko, OKAMOTO Yuki, Takahashi Kei
Принадлежит:

A battery control circuit having a novel structure, a battery protection circuit having a novel structure, and a power storage device including the battery circuit are provided. A semiconductor device includes n cell balancing circuits that respectively correspond to one secondary battery and each include a transistor, a comparator circuit, and a capacitor. In each of the n cell balancing circuits, an inverting input terminal of the comparator circuit and one electrode of the capacitor are electrically connected to one of a source and a drain of the transistor. The semiconductor device has functions of supplying a ground potential to the other electrode of the capacitor; turning on the transistor; supplying a first potential to the one electrode of the capacitor; turning off the transistor; electrically connecting the other electrode of the capacitor and a negative electrode of the secondary battery corresponding to each cell balancing circuit; supplying a sum of the first potential and a potential of the negative electrode of the secondary battery corresponding to each cell balancing circuit, to the one electrode of the capacitor; and controlling charging of the secondary battery corresponding to each cell balancing circuit. 19.-. (canceled)10. A semiconductor device comprising:a first comparator circuit configured to output a first signal controlling charging of a secondary battery;a second comparator circuit configured to output a second signal controlling the secondary battery;a third comparator circuit configured to output a third signal controlling discharging of the secondary battery;a first transistor of which one of a source electrode and a drain electrode is electrically connected to an inverting input terminal of the first comparator circuit;a first capacitor of which one electrode is electrically connected to the one of the source electrode and the drain electrode of the first transistor;a second transistor of which one of a source electrode and a drain ...

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Номер записи: 100
12-06-2014 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20140159771A1
Автор: IKEDA Takayuki, KUROKAWA Yoshiyuki
Принадлежит:

A programmable logic device (PLD) that can control whether to supply power in each logic element is provided. The PLD includes at least a programmable logic element, a terminal to which a potential is input from an external power source, a switch controlling conduction between the terminal and the logic element, and a memory outputting a control signal for setting the conduction state of the switch. The memory stores pieces of configuration data for setting the conduction state of the switch. Any one of the pieces of configuration data is output as the control signal from the memory to the switch. 1. A semiconductor device comprising:a power supply line;a logic element;a switch; anda first configuration memory,wherein a first terminal of the switch is electrically connected to the power supply line,wherein a second terminal of the switch is electrically connected to the logic element, andwherein a gate of the switch is electrically connected to the first configuration memory.2. The semiconductor device according to claim 1 ,wherein the first configuration memory comprises a first transistor and a second transistor,wherein a first terminal of the first transistor is electrically connected to a gate of the second transistor,wherein a first terminal of the second transistor is electrically connected to the gate of the switch, andwherein the first transistor comprises a channel formation region comprising an oxide semiconductor.3. The semiconductor device according to claim 2 ,wherein the switch is configured to control supply of power from the power supply line to the logic element.4. The semiconductor device according to claim 3 ,wherein the first configuration memory is configured to store first configuration data and output a first signal corresponding to the first configuration data so that power or no power is supplied from the power supply line to the logic element through the switch.5. The semiconductor device according to claim 1 ,wherein the first ...

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Номер записи: 101
18-03-2021 дата публикации

Electronic device

Номер: US20210082976A1
Автор: Hikaru Tamura, Takayuki Ikeda, Takeshi Aoki, Yoshiyuki Kurokawa
Принадлежит: Semiconductor Energy Laboratory Co Ltd

An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire.

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Номер записи: 102
24-03-2016 дата публикации

SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE

Номер: US20160086958A1
Автор: AOKI Takeshi, IKEDA Takayuki, KOZUMA Munehiro, KUROKAWA Yoshiyuki
Принадлежит:

A semiconductor device has a function of storing data and includes an output terminal, a first terminal, a second terminal, a first circuit, and second circuits. The first circuit has a function of keeping the potential of the output terminal to be a high-level or low-level potential. The second circuits each include a first pass transistor and a second pass transistor which are electrically connected in series, a first memory circuit, and a second memory circuit. The first and second memory circuits each have a function of making a potential retention node in an electrically floating state. The potential retention nodes of the first and second memory circuits are electrically connected to gates of the first and second pass transistors, respectively. A transistor including an oxide semiconductor layer may be provided in the first and second memory circuits. 1. A semiconductor device comprising:an output terminal;a first terminal;a second terminal;a first circuit; anda second circuit,wherein the first circuit comprises a first transistor, a second transistor, and an inverter,wherein the second circuit comprises a third transistor, a fourth transistor, a third circuit, and a fourth circuit,wherein the third circuit comprises a first node,wherein the fourth circuit comprises a second node,wherein an input terminal of the inverter is electrically connected to the second terminal,wherein an output terminal of the inverter is electrically connected to the output terminal,wherein the first transistor and the second transistor are electrically connected in parallel between the second terminal and a wiring supplied with a first potential,wherein a gate of the first transistor is electrically connected to the output terminal of the inverter,wherein the third circuit is configured to make the first node in an electrically floating state,wherein the fourth circuit is configured to make the second node in an electrically floating state,wherein the third transistor and the fourth ...

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Номер записи: 103
31-03-2022 дата публикации

IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE

Номер: US20220102419A1
Автор: IKEDA Takayuki, Kakehata Tetsuya, Tokumaru Ryo, Yamazaki Shunpei
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

An imaging device suitable for detecting infrared light is provided. The imaging device includes a first layer, a second layer, a third layer, and a fourth layer, which are stacked in this order. The first layer includes an infrared-light-transmitting filter. The second layer includes single crystal silicon. The third layer includes a device-formation layer. The fourth layer includes a support substrate. The second layer includes a photoelectric-conversion device whose light-absorption layer is the single crystal silicon. The third layer includes a transistor which includes a metal oxide in its channel formation region. The photoelectric-conversion device and the transistor are electrically connected. The photoelectric-conversion device receives light which has passed through the infrared-light-transmitting filter. 1. A manufacturing method of an imaging device comprising a single crystal silicon substrate and a support substrate ,wherein a photoelectric-conversion device is formed by providing a region whose conductivity type is opposite to a conductivity type of the single crystal silicon substrate on a first surface side of the single crystal silicon substrate,wherein a transistor which comprises a metal oxide in its channel formation region and is electrically connected to the photoelectric-conversion device is formed over the photoelectric-conversion device,wherein a first insulating layer is formed over the transistor,wherein a second insulating layer is formed over the support substrate,wherein a surface of the first insulating layer and a surface of the second insulating layer are bonded, andwherein a surface opposite to the first surface of the single crystal silicon substrate is grinded and polished to make a light-absorption layer of the photoelectric-conversion device thin.2. (canceled)3. The manufacturing method of the imaging device according to claim 1 ,wherein the photoelectric-conversion device is formed by providing a region whose conductivity type ...

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Номер записи: 104
31-03-2022 дата публикации

IMAGING DEVICE AND ELECTRONIC DEVICE

Номер: US20220103772A1
Автор: IKEDA Takayuki, Yamazaki Shunpei
Принадлежит:

An imaging device having a memory function is provided. Alternatively, an imaging device suitable for taking images of a moving object is provided. The imaging device includes a first to third layers; the second layer is provided between the first and the third layer; the first layer includes a photoelectric conversion device; the second layer includes a first and a second circuit; the third layer includes a third and a fourth circuit; the first circuit and the photoelectric conversion device have a function of generating imaging data; the third circuit has a function of reading the imaging data; the second circuit has a function of storing the imaging data read by the third circuit; the fourth circuit has a function of reading the imaging data stored in the second circuit; and the first circuit and the second circuit include a transistor including a metal oxide in a channel formation region. 1. An imaging device comprising a first layer , a second layer , and a third layer ,wherein the second layer is provided between the first layer and the third layer,wherein the first layer comprises a photoelectric conversion device,wherein the second layer comprises a first circuit and a second circuit,wherein the third layer comprises a third circuit and a fourth circuit,wherein the first circuit and the photoelectric conversion device have a function of generating imaging data,wherein the third circuit has a function of reading the imaging data,wherein the second circuit has a function of storing the imaging data read by the third circuit,wherein the fourth circuit has a function of reading the imaging data stored in the second circuit, andwherein the first circuit and the second circuit comprise a transistor comprising a metal oxide in a channel formation region.2. The imaging device according to claim 1 ,wherein the first circuit comprises a first transistor, a second transistor, a third transistor, a fourth transistor, and a first capacitor,wherein one electrode of the ...

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Номер записи: 105
31-03-2016 дата публикации

IMAGING DEVICE

Номер: US20160093652A1
Автор: IKEDA Takayuki, KUROKAWA Yoshiyuki
Принадлежит:

An imaging device which offers an image with high quality and is suitable for high-speed operation is provided. The imaging device includes a first region to an n-th region (n is a natural number of 2 or more and 16 or less) each including a first circuit, a second circuit, a third circuit, and a fourth circuit. The first to third circuits each include a transistor in which silicon is used in an active layer or an active region. The fourth circuit includes a photoelectric conversion element and a transistor in which an oxide semiconductor is used in an active layer. The first circuit includes a region overlapping with the fourth circuit. The third circuit includes a region overlapping with the fourth circuit. 1. An imaging device comprising:a first region to an n-th region (n is a natural number of 2 or more and 16 or less); anda first circuit, a second circuit, a third circuit, and a fourth circuit in each of the first region to the n-th region,wherein the first to third circuits each include a transistor in which silicon is used in an active layer or an active region,wherein the fourth circuit includes a transistor in which an oxide semiconductor is used in an active layer and a photoelectric conversion element,wherein the first circuit is configured to read out a signal from the third circuit,wherein the second circuit is configured to output a signal for driving the fourth circuit,wherein the third circuit is configured to process a signal output from the fourth circuit,wherein the fourth circuit is configured to convert light into the signal,wherein the first circuit includes a region overlapping with the fourth circuit, andwherein the third circuit includes a region overlapping with the fourth circuit.2. The imaging device according to claim 1 , wherein the oxide semiconductor contains In claim 1 , Zn claim 1 , and M (M is Al claim 1 , Ti claim 1 , Ga claim 1 , Sn claim 1 , Y claim 1 , Zr claim 1 , La claim 1 , Ce claim 1 , Nd claim 1 , or Hf).3. The imaging ...

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Номер записи: 106
05-05-2022 дата публикации

GLASSES-TYPE ELECTRONIC DEVICE

Номер: US20220137409A1
Автор: Hayashi Kentaro, IKEDA Takayuki, KIMURA Kiyotaka, Kobayashi Hidetomo, Nakagawa Takashi, NEI Kosei, Shishido Hideaki, Yamazaki Shunpei
Принадлежит:

An object is to provide an electronic device capable of recognizing a user's facial feature accurately. A glasses-type electronic device includes a first optical component, a second optical component, a frame, an imaging device, a feature extraction unit, and an emotion estimation unit. The frame is in contact with a side surface of the first optical component and a side surface of the second optical component. The imaging device is in contact with the frame and has a function of detecting part of a user's face. The feature extraction unit has a function of extracting a feature of the user's face from the detected part of the user's face. The emotion estimation unit has a function of estimating information on the user from the extracted feature.

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Номер записи: 107
01-04-2021 дата публикации

FABRIC FOR FUSION BONDING AND MULTILAYER BODY COMPRISING SAID FABRIC FOR FUSION BONDING

Номер: US20210094257A1
Автор: IKEDA Takayuki, KAWAKADO Shinya, NAKATSUKA Hitoshi, ONOGI Shoji
Принадлежит: KURARAY CO., LTD.

A fusing fabric may be used for thermal fusion of a plurality of plies of fabric. The fusing fabric contains at least partially fusible fibers containing a resin that has a melting point of 150° C. or lower or a softening point of 110° C. or lower, and has an air permeability of 1000 cm/cm·s or more to 10000 cm/cm·s or less. 1. A fusing fabric , comprising:{'sup': 3', '2', '3', '2, 'at least partially fusible fibers comprising a resin that has a melting point of 150° C. or lower or a softening point of 110° C. or lower, and having an air permeability of 1000 cm/cm··s or more to 10000 cm/cm·s or less,'}wherein the fusing fabric is suitable for thermal fusion of a plurality of plies of fabric.2. The fusing fabric of claim 1 , having a basis weight of 15 g/mor more to 80 g/mor less.3. The fusing fabric of claim 1 , wherein the fusible fibers are modified ethylene vinyl alcohol copolymer fibers or modified polyimide fibers.4. A laminate comprising the fusing fabric of claim 1 , and a plurality of plies of fabric to be thermally fused.5. The laminate of claim 4 , having a peel strength of 10 N/cm or more and an air permeability of 5 cm/cm·s or more.6. A method for producing a laminate at least partially comprising the fusing fabric of and a plurality of plies of fabric to be thermally fused claim 1 , the method comprising heating the fusing fabric and the plurality of plies of fabric at a temperature of 150° C. or lower claim 1 , thereby fusing the plurality of plies of fabric.7. The laminate of claim 4 , wherein plurality of plies of fabric comprises a woven fabric claim 4 , a knitted fabric claim 4 , a braid claim 4 , a nonwoven fabric claim 4 , a leather claim 4 , or any combination thereof.8. The method of claim 6 , wherein plurality of plies of fabric comprises a woven fabric claim 6 , a knitted fabric claim 6 , a braid claim 6 , a nonwoven fabric claim 6 , a leather claim 6 , or any combination thereof.9. The fusing fabric of claim 1 , wherein the fusing fabric ...

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Номер записи: 108
30-03-2017 дата публикации

Semiconductor device and electronic device

Номер: US20170093394A1
Автор: Takayuki Ikeda, Yoshiyuki Kurokawa
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A semiconductor device having excellent data retention characteristics. A transistor with a low off-state current is utilized to save and retain data stored in a memory circuit, and a potential to be applied to a back gate of the transistor is applied from a battery provided for each memory circuit. The potential applied to the back gate of the transistor and a potential for charging the battery are generated in a voltage generation circuit. The battery is charged utilizing power gating of the memory circuit and data retention characteristics is improved.

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Номер записи: 109
19-03-2020 дата публикации

Imaging device and electronic device

Номер: US20200091214A1
Автор: Takayuki Ikeda
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A data potential generated by the photoelectric conversion operation is input to a pulse generation circuit to output a pulse signal having a spike waveform. In addition, a structure in which product-sum operation of pulse signals is performed is provided, and digital data is generated from a new pulse signal. The digital data is taken into a neural network or the like, whereby processing such as image recognition can be performed. Processing up to taking an enormous amount of image data into a neural network or the like can be performed in the imaging device; thus, processing can be efficiently performed.

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Номер записи: 110
16-04-2015 дата публикации

DISPLAY DEVICE AND METHOD FOR DRIVING DISPLAY DEVICE

Номер: US20150102207A1
Автор: IKEDA Takayuki, KUROKAWA Yoshiyuki, TAMURA Hikaru
Принадлежит:

A display device includes a pixel which includes a first photosensor portion having a first photodiode for detecting visible light, which is provided together with a display element portion; and a pixel which includes a second photosensor portion having a second photodiode for detecting infrared rays, which is provided together with another display element portion. The second photosensor portion detects infrared rays included in external light, and selects an imaging element and adjusts sensitivity in accordance with the amount of infrared rays detected by the second photosensor portion. 1. A method for driving a semiconductor device , the semiconductor device comprising:an element portion in a pixel of a region;a first photosensor portion in the pixel, which is provided together with the element portion; anda second photosensor portion in another pixel without the first photosensor portion, which is provided together with another element portion, external light entering the region;', 'detecting an infrared ray included in the external light by the second photosensor portion;', 'changing light reception sensitivity of the first photosensor portion in accordance with an amount of infrared rays detected by the second photosensor portion; and', 'performing imaging using visible light in the first photosensor portion., 'the method for driving the semiconductor device comprising2. A method for driving a semiconductor device comprising:receiving external light on a first pixel and a second pixel;detecting an infrared ray in an external light by a second photosensor portion in the second pixel;changing light reception sensitivity of a first photosensor portion in the first pixel in accordance with an amount of infrared rays detected by the second photosensor portion; andperforming imaging using visible light in the first photosensor portion.3. A method for driving a semiconductor device , the semiconductor device comprising:an element portion in a pixel of a region;a first ...

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Номер записи: 111
28-03-2019 дата публикации

CONTROL DEVICE FOR OPENING AND CLOSING BODIES

Номер: US20190093408A1
Автор: Fueki Masahiro, IKEDA Takayuki, KIMURA Takashi, Kishino Ryosuke
Принадлежит:

Provided is a control device for an opening and closing member configured to drive a driving source of an opening and closing member that opens and closes an opening section of a vehicle, and the control device for an opening and closing member includes a power generation detector configured to detect power generation of the driving source, and a controller configured to control driving of the driving source, wherein the controller is changed to a sleep state upon stoppage of the opening and closing member, and is activated from the sleep state to control a braking of the driving source when the power generation detector detects power generation of the driving source. 1. A control device for an opening and closing member that drives a driving source of an opening and closing member that opens and closes an opening section of a vehicle , the control device for an opening and closing member comprising:a rotation sensor that outputs a pulse signal to detect a position of the opening and closing member;a power generation detector that detects power generation of the driving source; anda controller that controls driving of the driving source,wherein the controller is changed to a sleep state upon stoppage of the opening and closing member, during in the sleep state, the controller controls a braking of the driving source when it is determined that the opening and closing member is moving on the basis of an activation of the rotation sensor at a prescribed interval, and also controls the braking of the driving source when the power generation detector detects power generation of the driving source in the sleep state in which the activation of the rotation sensor at the prescribed interval is not performed.2. (canceled)3. The control device for an opening and closing member according to claim 1 , wherein claim 1 , when a position of the opening and closing member reaches a vicinity of a position in which the opening and closing member is in a fully closed state claim 1 , ...

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Номер записи: 112
28-03-2019 дата публикации

IMAGING DEVICE AND ELECTRONIC DEVICE

Номер: US20190096206A1
Автор: IKEDA Takayuki, KOZUMA Munehiro, KUROKAWA Yoshiyuki, Nakagawa Takashi
Принадлежит:

An imaging device with low power consumption is provided. It includes a pixel capable of outputting difference data between two different frames, a circuit determining the significance of the difference data, a circuit controlling power supply, an A/D converter, and the like; obtains image data and then obtains difference data; and shuts off power supply to the A/D converter and the like in the case where it is determined that there is no difference, and continues or restarts the power supply to the A/D converter and the like when it is determined that there is a difference. Determining the significance of the difference data can be performed row by row in a pixel array or at nearly the same time in all the pixels included in the pixel array. 1. An imaging device comprising:a first pixel circuit, a second pixel circuit, a first circuit, a second circuit, a third circuit, a fourth circuit, a fifth circuit, and a first wiring,wherein the first pixel circuit is electrically connected to the first circuit,wherein the first pixel circuit is electrically connected to the fourth circuit,wherein the second pixel circuit is electrically connected to the second circuit,wherein the second pixel circuit is electrically connected to the fifth circuit,wherein the first circuit is electrically connected to the first wiring,wherein the second circuit is electrically connected to the first wiring,wherein the first wiring is electrically connected to the third circuit,wherein the third circuit is electrically connected to the fourth circuit,wherein the third circuit is electrically connected to the fifth circuit,wherein the first and the second pixel circuit have a function of outputting an analog signal,wherein the first and the second pixel circuit have a function of outputting a difference in potential between two different frames,wherein the first and the second circuit have a function of outputting a third potential to the first wiring in a case where the difference in potential ...

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Номер записи: 113
12-05-2022 дата публикации

IMAGING DEVICE AND ELECTRONIC DEVICE

Номер: US20220149100A1
Автор: IKEDA Takayuki, Kusumoto Naoto
Принадлежит:

An imaging device having a three-dimensional integration structure is provided. A first structure including a transistor including silicon in an active layer or an active region and a second structure including an oxide semiconductor in an active layer are fabricated. After that, the first and second structures are bonded to each other so that metal layers included in the first and second structures are bonded to each other; thus, an imaging device having a three-dimensional integration structure is formed. 1. A camera module comprising:an image sensor chip;a wire electrically connected to the image sensor chip;a lens provided over the image sensor chip; anda lens cover fixing the lens, a photoelectric conversion element;', 'an insulating layer over the photoelectric conversion element;', 'a light-blocking layer including tungsten over the insulating layer;', 'a color filter over the light-blocking layer;', 'a microlens over the color filter;', 'a first transistor, a second transistor, a third transistor and a fourth transistor, each including silicon in a channel formation region; and', 'a first metal part and a second metal part, each including copper,, 'wherein the image sensor chip compriseswherein the first metal part is electrically connected to the second metal part provided below the first metal part,wherein the first transistor and the second transistor are provided over the first metal part,wherein the third transistor and the fourth transistor are provided below the second metal part,wherein the first transistor and the second transistor has a shared region in which one of a source region and a drain region of the first transistor is shared with one of a source region and a drain region of the second transistor,wherein the shared region is configured to be a floating diffusion (FD) node, and is overlapped with a connection region of the first metal part and the second metal part,wherein a gate of the first transistor is electrically connected to a first ...

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Номер записи: 114
14-04-2016 дата публикации

IMAGING DEVICE

Номер: US20160104734A1
Автор: HIROSE Atsushi, IKEDA Takayuki, KUROKAWA Yoshiyuki
Принадлежит:

To provide an imaging device in which incident light can be converted into an appropriate electric signal. The imaging device includes a photoelectric conversion element, a first transistor, a second transistor, a third transistor, and a fourth transistor. One of a source electrode and a drain electrode of the first transistor and one electrode of the photoelectric conversion element have an electrical connection portion in a first opening provided in an insulating layer positioned between the one of the source electrode and the drain electrode of the first transistor and the one electrode of the photoelectric conversion element. The number of the first opening is one in a region where the one of the source electrode and the drain electrode of the first transistor overlaps with the one electrode of the photoelectric conversion element. 1. An imaging device comprising a photoelectric conversion element , a first transistor , a second transistor , and a first insulating layer provided between the first transistor and the photoelectric conversion element ,wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to an electrode of the photoelectric conversion element,wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to a gate electrode of the second transistor,wherein a single electrical connection portion between the one of the source electrode and the drain electrode of the first transistor and the electrode of the photoelectric conversion element is provided in the first insulating layer,wherein the first transistor includes an oxide semiconductor in an active layer, andwherein drain current spectral density of the first transistor is inversely proportional to frequency.2. The imaging device according to claim 1 , further comprising an opening claim 1 ,wherein the single electrical connection portion is provided in the opening where the one of the source ...

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Номер записи: 115
23-04-2015 дата публикации

SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF

Номер: US20150108556A1
Автор: AOKI Takeshi, IKEDA Takayuki, KOZUMA Munehiro, KUROKAWA Yoshiyuki
Принадлежит:

A semiconductor device includes a photodiode, a first transistor, a second transistor, and a third transistor. The second transistor and the third transistor have a function of retaining a charge accumulated in a gate of the first transistor. In a period during which the second transistor and the third transistor are off, a voltage level of a voltage applied to a gate of the second transistor is set to be lower than a voltage level of a source of the second transistor and a voltage level of a drain of the second transistor, and a voltage level of a voltage applied to a gate of the third transistor is set to be lower than a voltage level of a source of the third transistor and a voltage level of a drain of the third transistor. 1. (canceled)2. A semiconductor device comprising:a photosensor comprising:a first transistor;a second transistor;a third transistor; anda fourth transistor,wherein a first terminal of the first transistor is electrically connected to a first terminal of the second transistor and a gate of the third transistor,wherein a first terminal of the third transistor is electrically connected to a first terminal of the fourth transistor, andwherein a voltage level of a gate of the first transistor is lower than a voltage level of the first terminal of the first transistor and a voltage level of a second terminal of the first transistor, and a voltage level of a gate of the second transistor is lower than a voltage level of the first terminal of the second transistor and a voltage level of a second terminal of the second transistor when a charge corresponding to an amount of incident light to the photosensor and accumulated to the gate of the third transistor is retained by turning off the first transistor and the second transistor.3. The semiconductor device according to claim 2 ,wherein the first transistor comprises a channel formation region comprising an oxide semiconductor.4. The semiconductor device according to claims 2 ,wherein the second ...

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Номер записи: 116
30-04-2015 дата публикации

PROGRAMMABLE LOGIC DEVICE AND SEMICONDUCTOR DEVICE

Номер: US20150116000A1
Автор: AOKI Takeshi, IKEDA Takayuki, KOZUMA Munehiro, KUROKAWA Yoshiyuki
Принадлежит:

To provide a PLD having a reduced circuit area and an increased operation speed. In the circuit structure, a gate of a transistor provided between an input terminal and an output terminal of a programmable switch element is in an electrically floating state in a period when a signal is input to the programmable switch element. The structure enables the voltage of a gate to be increased by a boosting effect in response to a signal supplied from programmable logic elements, suppressing a reduction in amplitude voltage. This can reduce a circuit area by a region occupied by a booster circuit such as a pull-up circuit and increase operation speed. 1. (canceled)2. A programmable logic device comprising: an input terminal;', 'an output terminal;', 'a first transistor;', 'a second transistor;', 'an insulating film over the first transistor and the second transistor;', 'a third transistor over the insulating film; and', 'a fourth transistor over the insulating film,, 'a programmable switch element comprisingwherein a first terminal of the first transistor is electrically connected to the input terminal,wherein a second terminal of the first transistor and a first terminal of the second transistor are electrically connected to each other,wherein a second terminal of the second transistor is electrically connected to the output terminal,wherein a first terminal of the third transistor is electrically connected to a gate of the first transistor, andwherein a first terminal of the fourth transistor is electrically connected to a gate of the second transistor.3. The programmable logic device according to claim 2 ,wherein the third transistor comprises a channel formation region comprising an oxide semiconductor, andwherein the fourth transistor comprises a channel formation region comprising an oxide semiconductor.4. The programmable logic device according to claim 3 ,wherein the oxide semiconductor of the channel formation region of the third transistor comprises In, Ga, and Zn ...

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Номер записи: 117
29-04-2021 дата публикации

SECONDARY BATTERY PROTECTION CIRCUIT AND SECONDARY BATTERY ANOMALY DETECTION SYSTEM

Номер: US20210126473A1
Автор: IKEDA Takayuki, KOZUMA Munehiro, Matsuzaki Takanori, OKAMOTO Yuki, Tajima Ryota, Yamazaki Shunpei
Принадлежит:

Safety is secured in such a manner that an anomaly of a secondary battery is detected with a protection circuit, for example, a phenomenon that lowers the safety of a secondary battery, particularly a micro short circuit, is detected early, and users are warned or the use of the secondary battery is stopped. A secondary battery protection circuit includes a first memory circuit electrically connected to a secondary battery, a comparison circuit electrically connected to the first memory circuit, a second memory circuit electrically connected to the comparison circuit, and a power-off switch electrically connected to the second memory circuit. The power-off switch is electrically connected to the secondary battery, and the first memory circuit includes a first transistor including an oxide semiconductor and retains a voltage value of the secondary battery in an analog manner. 111-. (canceled)12. A secondary battery protection circuit comprising:a first memory circuit electrically connected to a secondary battery;a comparison circuit electrically connected to the first memory circuit;a second memory circuit electrically connected to the comparison circuit; anda power-off switch electrically connected to the second memory circuit,wherein the power-off switch is electrically connected to the secondary battery,wherein the first memory circuit comprises a first transistor comprising an oxide semiconductor, andwherein the first transistor is configured to retain a voltage value of the secondary battery in an analog manner.13. The secondary battery protection circuit according to claim 12 ,wherein the second memory circuit comprises a second transistor comprising an oxide semiconductor, andwherein the second transistor is configured to retain data of the power-off switch.14. The secondary battery protection circuit according to claim 12 ,wherein the comparison circuit is electrically connected to the secondary battery, and when a voltage drop of the secondary battery occurs ...

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Номер записи: 118
28-04-2016 дата публикации

Oscillator Circuit, Phase Locked Loop, and Electronic Device

Номер: US20160117045A1
Автор: IKEDA Takayuki, KUROKAWA Yoshiyuki, Yamazaki Shunpei
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

An oscillator circuit includes a MEMS switch, a transistor, a buffer circuit, and an analog memory. The MEMS switch includes a fixed electrode and a movable electrode. A gate potential of the transistor is retained by the analog memory. The potential of the fixed electrode is controlled by an on-state current of the transistor. A first change and a second change periodically occur in the movable electrode, thereby causing a periodic change in the potential of the fixed electrode. The first change occurs due to electrostatic attraction caused by the potential difference between the fixed electrode and the movable electrode. The second change occurs due to restoring force that is generated when the movable electrode and the fixed electrode have the same potential. The potential of the fixed electrode is output through the buffer circuit. 1. An oscillator circuit comprising:a MEMS switch;a capacitor;a buffer circuit;a first transistor;a second transistor;a first node; anda second node,wherein the MEMS switch comprises a movable electrode and a fixed electrode,wherein the fixed electrode is electrically connected to the first node,wherein a first terminal of the capacitor is electrically connected to the first node,wherein an input terminal of the buffer circuit is electrically connected to the first node,wherein a first terminal of the first transistor is electrically connected to the second node,wherein the first transistor comprises a channel formation region comprising an oxide semiconductor,wherein a gate of the second transistor is electrically connected to the second node, andwherein a first terminal of the second transistor is electrically connected to the first node.2. The oscillator circuit according to claim 1 , wherein the second transistor comprises a channel formation region comprising an oxide semiconductor.3. A phase locked loop comprising the oscillator circuit according to .4. An electronic component comprising:a chip; anda lead,{'claim-ref': {'@idref ...

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Номер записи: 119
28-04-2016 дата публикации

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20160118426A1
Автор: AOKI Takeshi, Ikeda Masataka, IKEDA Takayuki, KOZUMA Munehiro, KUROKAWA Yoshiyuki, TAMURA Hikaru
Принадлежит:

In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion. 1. (canceled)2. A semiconductor device comprising:a first pixel; anda second pixel, a first photoelectric conversion element;', 'a first transistor; and', 'a second transistor,, 'wherein the first pixel comprises a second photoelectric conversion element;', 'a third transistor; and', 'a fourth transistor,, 'wherein the second pixel compriseswherein the first transistor is configured to output a signal corresponding to a potential of a first signal charge accumulation portion,wherein the second transistor is configured to control charge accumulation in the first signal charge accumulation portion performed by the first photoelectric conversion element,wherein the third transistor is configured to output a signal corresponding to a potential of a second signal charge accumulation portion,wherein the fourth transistor is configured to control charge accumulation in the second signal charge accumulation portion performed by the second photoelectric conversion element,wherein a channel formation region in the second transistor comprises an oxide semiconductor,wherein a channel formation region in the fourth transistor comprises an oxide semiconductor,wherein a gate of the second transistor is electrically connected to a gate of the fourth transistor,wherein a reset operation in the first pixel and a reset operation in the second pixel are performed at substantially the same time ...

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Номер записи: 120
07-05-2015 дата публикации

MEMORY ELEMENT AND PROGRAMMABLE LOGIC DEVICE

Номер: US20150123705A1
Автор: IKEDA Takayuki
Принадлежит:

To provide a memory element where a desired potential can be stored as data without an increase in the number of power source potentials. The memory element stores data in a node which is brought into a floating state by turning off a transistor a channel of which is formed in an oxide semiconductor layer. The potential of a gate of the transistor can be increased by capacitive coupling between the gate and a source of the transistor. With the structure, a desired potential can be stored as data without an increase in the number of power source potentials. 1. (canceled)2. A method for driving a programmable logic device comprising: a first transistor; a second transistor; a node electrically connected to one of a source and a threshold voltage drain of the first transistor; a first wiring electrically connected to one of a source and a drain of the second transistor; and a second wiring electrically connected to the other of the source and the drain of the first transistor , the method comprising the steps of:applying a first potential to the first wiring;changing a potential applied to the first wiring from the first potential to a second potential, thereby turning on the first transistor;applying the first potential to the second wiring, thereby applying the first potential to the node through the first transistor;turning off the second transistor when a potential of a gate of the first transistor is increased to a third potential which is obtained by subtracting a threshold voltage of the second transistor from the second potential;changing a potential applied to the second wiring from the first potential to the second potential; andincreasing the potential of the gate of the first transistor due to capacitive coupling between the gate and the source of the first transistor, thereby changing the potential of the node to the second potential.3. The method according to claim 2 , wherein the second potential is higher than the first potential.4. The method according ...

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Номер записи: 121
09-06-2022 дата публикации

DISPLAY APPARATUS AND ELECTRONIC DEVICE

Номер: US20220181428A1
Автор: IKEDA Takayuki, KATSUI Shuichi, Kobayashi Hidetomo, Shishido Hideaki
Принадлежит:

A display apparatus with low power consumption and high image quality is provided. The display apparatus includes a light-emitting element, a first transistor, a second transistor, a third transistor, a first capacitor, and a second capacitor. Preferably, one electrode of the light-emitting element is electrically connected to one of a source and a drain of the first transistor; the one electrode of the light-emitting element is electrically connected to one electrode of the first capacitor; a gate of the first transistor is electrically connected to one of a source and a drain of the second transistor; the gate of the first transistor is electrically connected to one electrode of the second capacitor; the other electrode of the second capacitor is electrically connected to the other electrode of the first capacitor; and the other electrode of the second capacitor is electrically connected to one of a source and a drain of the third transistor. 1. A display apparatus comprising:a light-emitting element, a first transistor, a second transistor, a third transistor, a first capacitor, a second capacitor, a first wiring, a second wiring, a third wiring, and a fourth wiring,wherein one electrode of the light-emitting element is electrically connected to one of a source and a drain of the first transistor,wherein the one electrode of the light-emitting element is electrically connected to one electrode of the first capacitor,wherein a gate of the first transistor is electrically connected to one of a source and a drain of the second transistor,wherein the gate of the first transistor is electrically connected to one electrode of the second capacitor,wherein the other electrode of the second capacitor is electrically connected to the other electrode of the first capacitor,wherein the other electrode of the second capacitor is electrically connected to one of a source and a drain of the third transistor,wherein a gate of the third transistor is electrically connected to the ...

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Номер записи: 122
27-04-2017 дата публикации

MOTOR CONTROL DEVICE

Номер: US20170117832A1
Автор: IKEDA Takayuki, KADOYA Akira
Принадлежит:

A motor control device to control rotation of an electric motor configured to conduct opening/closing of an opening/closing body provided in a vehicle includes a control unit configured to generate a regenerating brake force to the electric motor until a predetermined time passes, in a case where it is determined that the opening/closing body reaches a full open position. 1. A motor control device to control rotation of an electric motor configured to conduct opening/closing of an opening/closing body provided in a vehicle , the motor control device , comprising:a control unit configured to generate a regenerating brake force to the electric motor until a predetermined time passes, in a case where it is determined that the opening/closing body reaches a full open position.2. The motor control device according to claim 1 , further comprising:a full open position determination unit configured to determine whether or not the opening/closing body reaches the full open position based on pulse signal output from a rotation angle sensor in accordance with rotation of the electric motor.3. The motor control device according to claim 2 ,wherein the full open position determination unit is configured to determine that the opening/closing body reaches the full open position in a case where the pulse signal is equal or exceed a first threshold value.4. The motor control device according to claim 2 ,wherein the full open position determination unit is configured to determine that the opening/closing body reaches the full open position in a case where the pulse signal is equal or exceed a first threshold value, and a current value of a current which flows in the electric motor is equal or exceed a second threshold value.5. The motor control device according to claim 2 ,wherein the full open position determination unit is configured to determine that the opening/closing body reaches the full open position in a case where a traveling speed of the opening/closing body calculated ...

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Номер записи: 123
09-04-2020 дата публикации

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

Номер: US20200112320A1
Автор: IKEDA Takayuki, Yoneda Seiichi
Принадлежит:

A semiconductor device in which an increase of circuit area is prevented is provided. A semiconductor device including a control circuit with a plurality of scan chain circuits, a DA converter electrically connected to the control circuit, and a plurality of potential holding units electrically connected to the DA converter is provided. The plurality of potential holding units each include a transistor including an oxide semiconductor in a channel formation region and a capacitor electrically connected to the transistor. In accordance with digital data held in any one of the plurality of scan chain circuits, an output potential output from the DA converter is held in any one of the plurality of potential holding units. 1. A semiconductor device comprising:a control circuit comprising a plurality of scan chain circuits;a DA converter electrically connected to the control circuit;a plurality of potential holding units electrically connected to the DA converter; anda memory electrically connected to the plurality of potential holding units,wherein each of the plurality of potential holding units comprises a transistor and a capacitor electrically connected to the transistor,wherein a channel formation region of the transistor comprises an oxide semiconductor,wherein an output potential output from the DA converter is held in one of the plurality of potential holding units, in accordance with digital data held in one of the plurality of scan chain circuits,wherein the one of the plurality of potential holing circuits supplies an analog data to the memory, andwherein the output potential output from the DA converter is held in a node where one of a source and a drain of the transistor is electrically connected to one electrode of the capacitor in the one of the plurality of potential holding units.2. A semiconductor device comprising:a control circuit comprising a plurality of scan chain circuits;a DA converter electrically connected to the control circuit;a plurality of ...

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Номер записи: 124
13-05-2021 дата публикации

IMAGING DEVICE AND ELECTRONIC DEVICE

Номер: US20210143203A1
Автор: IKEDA Takayuki, Kusumoto Naoto
Принадлежит:

An imaging device having a three-dimensional integration structure is provided. A first structure including a transistor including silicon in an active layer or an active region and a second structure including an oxide semiconductor in an active layer are fabricated. After that, the first and second structures are bonded to each other so that metal layers included in the first and second structures are bonded to each other; thus, an imaging device having a three-dimensional integration structure is formed. 1. An imaging device comprising:a first metal part and a second metal part in contact with each other, the second metal part provided below the first metal part;a plurality of first transistors provided over the first metal part;a photoelectric conversion element provided over the plurality of first transistors; anda second transistor provided below the second metal part,wherein the photoelectric conversion element is formed in a semiconductor substrate,wherein a p-type region of the photoelectric conversion element is electrically connected to a third conductive layer below the semiconductor substrate,wherein a light-blocking layer provided over the semiconductor substrate overlaps a region where the p-type region is in electrical contact with the third conductive layer,wherein one of the plurality of first transistors shares a source or drain region of another of the plurality of first transistors, andwherein the source or drain region overlaps a joint region between the first metal part and the second metal part.2. The imaging device according to claim 1 , wherein current characteristics of the second transistor is different from current characteristics of the plurality of first transistors.3. The imaging device according to claim 1 , wherein the first metal part is a same metal element as the second metal part.4. The imaging device according to claim 1 , wherein an off-state current per channel width of the plurality of first transistors is lower than an off- ...

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Номер записи: 125
13-05-2021 дата публикации

FUNCTIONAL PANEL, DISPLAY DEVICE, INPUT/OUTPUT DEVICE, AND DATA PROCESSING DEVICE

Номер: US20210143209A1
Автор: IKEDA Takayuki, Yamazaki Shunpei
Принадлежит:

A novel functional panel that is highly convenient or highly reliable is provided. The functional panel includes a first pixel. The first pixel includes a first element, a color conversion layer, and a first functional layer. The first functional layer is positioned between the first element and the color conversion layer. The first element has a function of emitting light and contains gallium nitride. The color conversion layer has a function of converting the color of light emitted from the first element into a different color. The first functional layer includes a first insulating film and a pixel circuit. The first insulating film includes a region positioned between the pixel circuit and the first element, and has an opening. The pixel circuit includes a first transistor. The first transistor includes a first oxide semiconductor film and is electrically connected to the first element through the opening. 1. A functional panel comprising: a first element configured to emit light;', 'a color conversion layer over the first element, the color conversion layer configured to convert a color of light emitted from the first element into a different color; and', 'a first functional layer between the first element and the color conversion layer,, 'a first pixel comprisingwherein the first element comprises gallium nitride, a first insulating film comprising an opening; and', 'a pixel circuit over the first insulating film, the pixel circuit comprising a first transistor,, 'wherein the first functional layer compriseswherein the first transistor is electrically connected to the first element through the opening,wherein the first insulating film comprises a region between the pixel circuit and the first element, andwherein the first transistor comprises a first oxide semiconductor film.2. The functional panel according to claim 1 , further comprising:a region comprising a first group of pixel sets and a second group of pixel sets,wherein the first group of pixel sets is ...

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Номер записи: 126
05-05-2016 дата публикации

Electronic device

Номер: US20160126270A1
Автор: Hikaru Tamura, Takayuki Ikeda, Takeshi Aoki, Yoshiyuki Kurokawa
Принадлежит: Semiconductor Energy Laboratory Co Ltd

An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire.

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Номер записи: 127
14-05-2015 дата публикации

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20150129944A1
Автор: AOKI Takeshi, Ikeda Masataka, IKEDA Takayuki, KOZUMA Munehiro, KUROKAWA Yoshiyuki, TAMURA Hikaru
Принадлежит:

In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion. 1. (canceled)2. A semiconductor device comprising: a photoelectric conversion element;', 'a signal charge accumulation portion;', 'a charge accumulation control transistor, wherein one of a source and a drain of the charge accumulation control transistor is electrically connected to the photoelectric conversion element and the other of the source and the drain of the charge accumulation control transistor is electrically connected to the signal charge accumulation portion;, 'a plurality of pixels arranged in a matrix, each of the plurality of pixels comprisingwherein a charge accumulation operation by the photoelectric conversion element is performed in the plurality of pixels at substantially the same time, and a read operation of a signal from each of the plurality of pixels is performed per row, andwherein gates of the charge accumulation control transistors in the plurality of pixels are electrically connected to each other.3. The semiconductor device according to claim 2 ,wherein a channel formation region in the charge accumulation control transistor comprises an oxide semiconductor.4. The semiconductor device according to claim 2 ,wherein each of the plurality of pixels further comprises an amplifying transistor and a selection transistor,wherein a gate of the amplifying transistor is electrically connected to the signal charge accumulation portion, andwherein one of ...

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Номер записи: 128
25-08-2022 дата публикации

POLYAMIDE FIBERS, METHOD FOR PRODUCING SAME AND FIBER STRUCTURE

Номер: US20220267598A1
Автор: IKEDA Takayuki, KAWAKADO Shinya, NAKATSUKA Hitoshi, OHGA Daisuke, ONOGI Shoji, Yamasaki Kohei
Принадлежит: KURARAY CO., LTD.

Provided is a polyamide fiber having excellent color developability, as well as a method for producing such a polyamide fiber, and a fiber structure. The polyamide fiber comprises a polyamide resin composition comprising a polyamide resin and an amino group-containing color enhancer, the polyamide fiber having terminal amino groups at a concentration of from 5.0 μeq/g to 40.0 μeq/g. Such a fiber can be produced by a production method at least comprising: melt-kneading a polyamide resin composition including a polyamide resin and an amino group-containing color enhancer to give a melt-kneaded product having a predetermined melt viscosity; and spinning the melt-kneaded product to give fibers. 1. A polyamide fiber comprising a polyamide resin composition comprising a polyamide resin and an amino group-containing color enhancer ,the polyamide fiber having terminal amino groups at a concentration of from 5.0 μeq/g to 40.0 μeq/g.2. The polyamide fiber according to claim 1 , wherein the polyamide resin has a repeating unit which includes a linear or branched saturated aliphatic hydrocarbon group having 1 to 22 carbon atoms.3. The polyamide fiber according to claim 1 , wherein the polyamide resin contains a polyamide elastomer.4. The polyamide fiber according to claim 1 , wherein the amino group-containing color enhancer comprises a polyamide oligomer.5. The polyamide fiber according to claim 4 , wherein the polyamide oligomer has a number-average molecular weight of from 500 to 10000.6. The polyamide fiber according to claim 1 , wherein the amino group-containing color enhancer has terminal amino groups at a concentration of from 100 μeq/g to 2000 μeq/g.7. The polyamide fiber according to claim 1 , wherein the polyamide fiber contains the polyamide resin and the amino group-containing color enhancer at a mass ratio (the former/the latter) of from 99/1 to 70/30.8. The polyamide fiber according to claim 1 , wherein a DSC curve of the polyamide fiber obtained using ...

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Номер записи: 129
25-08-2022 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20220271669A1
Автор: IKEDA Takayuki, KUNITAKE Hitoshi, YAKUBO Yuto
Принадлежит:

A semiconductor device in which an increase in circuit area is inhibited is provided. The semiconductor device includes a first circuit layer and a second circuit layer over the first circuit layer; the first circuit layer includes a first transistor; the second circuit layer includes a second transistor; a gate of the second transistor is electrically connected to one of a source and a drain of the first transistor; a source and a drain of the second transistor are electrically connected to the other of the source and the drain of the first transistor; and a semiconductor layer of the second transistor contains a metal oxide. 1. A semiconductor device comprising:a first circuit layer; anda second circuit layer over the first circuit layer,wherein the first circuit layer comprises a first transistor,wherein the second circuit layer comprises a second transistor,wherein a gate of the second transistor is electrically connected to one of a source and a drain of the first transistor,wherein a source and a drain of the second transistor are electrically connected to the other of the source and the drain of the first transistor, andwherein a semiconductor layer of the second transistor comprises a metal oxide.2. The semiconductor device according to claim 1 ,wherein a semiconductor layer of the first transistor comprises one or more selected from Si, Ge, and Ga.3. The semiconductor device according to claim 1 ,wherein the metal oxide comprises an oxide comprising at least one of In, Ga, and Zn.4. A semiconductor device comprising:a first circuit comprising a first transistor; anda snubber circuit electrically connected to the first circuit,wherein a first terminal of the snubber circuit is electrically connected to one of a source and a drain of the first transistor,wherein a second terminal of the snubber circuit is electrically connected to the other of the source and the drain of the first transistor,wherein the snubber circuit comprises a MOS capacitor,wherein a ...

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Номер записи: 130
12-05-2016 дата публикации

IMAGING DEVICE AND ELECTRONIC DEVICE

Номер: US20160133660A1
Автор: IKEDA Takayuki, Inoue Hiroki, KUROKAWA Yoshiyuki, OKAMOTO Yuki
Принадлежит:

To provide an imaging device capable of obtaining high-quality imaging data. The imaging device includes a first circuit and a second circuit. The first circuit includes a photoelectric conversion element, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first capacitor, a second capacitor, and a third capacitor. The second circuit includes a seventh transistor. The imaging device can compensate variation in electrical characteristics of an amplifier transistor included in the first circuit. 1. An imaging device comprising:a first circuit; anda second circuit,wherein the first circuit includes a photoelectric conversion element, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first capacitor, a second capacitor, and a third capacitor,wherein the second circuit includes a seventh transistor,wherein one terminal of the photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor,wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,wherein the other of the source and the drain of the first transistor is electrically connected to one terminal of the first capacitor,wherein one of a source and a drain of the third transistor is electrically connected to the other terminal of the first capacitor;wherein the other terminal of the first capacitor is electrically connected to one terminal of the second capacitor,wherein one of a source and a drain of the fourth transistor is electrically connected to the other terminal of the second capacitor,wherein the other of the source and the drain of the fourth transistor is electrically connected to one of a source and a drain of the fifth transistor,wherein one terminal of the third capacitor is electrically connected to the other ...

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Номер записи: 131
12-05-2016 дата публикации

IMAGING DEVICE AND ELECTRONIC DEVICE

Номер: US20160134789A1
Автор: IKEDA Takayuki, Inoue Hiroki, KUROKAWA Yoshiyuki, OKAMOTO Yuki
Принадлежит:

To provide an imaging device capable of obtaining high-quality imaging data. The imaging device includes a first circuit and a second circuit. The first circuit includes a photoelectric conversion element, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, a first capacitor, a second capacitor, and a third capacitor. The second circuit includes an eighth transistor. The imaging device can compensate variation in threshold voltage of an amplifier transistor included in the first circuit. 1. An imaging device comprising:a first circuit; anda second circuit,wherein the first circuit includes a photoelectric conversion element, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, a first capacitor, a second capacitor, and a third capacitor,wherein the second circuit includes an eighth transistor,wherein one terminal of the photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor,wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,wherein the other of the source and the drain of the first transistor is electrically connected to one terminal of the first capacitor,wherein one of a source and a drain of the third transistor is electrically connected to the other terminal of the first capacitor;wherein the other terminal of the first capacitor is electrically connected to one terminal of the second capacitor,wherein one of a source and a drain of the fourth transistor is electrically connected to the other terminal of the second capacitor,wherein the other of the source and the drain of the fourth transistor is electrically connected to one of a source and a drain of the fifth transistor,wherein one of a source and a drain of the sixth ...

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Номер записи: 132
10-05-2018 дата публикации

SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE

Номер: US20180130539A1
Автор: IKEDA Takayuki, Yoneda Seiichi
Принадлежит:

A highly reliable semiconductor device is provided. A memory cell includes a first transistor and a second transistor. One of a source and a drain of the first transistor is electrically connected to a gate of the second transistor. The first transistor is configured to hold charge corresponding to first data retained in the memory cell when turned off. The data writing circuit is configured to write the first data and correction data to the memory cell. The data reading circuit is configured to read a first voltage value corresponding to the first data, read a second voltage value corresponding to the correction data written to the memory cell, convert a voltage value that is equivalent to a difference between the first voltage value and the second voltage value into corrected first data, and output the corrected first data to the data writing circuit. 1. A semiconductor device comprising:a data writing circuit;a data reading circuit; anda memory cell comprising first and second transistors,wherein:a source or a drain of the first transistor is electrically connected to a gate of the second transistor,the first transistor is configured to hold charge corresponding to data retained in the memory cell when turned off,the data writing circuit is configured to write first data and correction data to the memory cell, andthe data reading circuit is configured to read a first voltage value corresponding to the first data, read a second voltage value corresponding to the correction data after reading the first voltage value, convert a difference voltage value between the first and second voltage values into corrected first data, and output the corrected first data to the data writing circuit.2. The semiconductor device according to claim 1 , further comprising:a reading bit line electrically connected to the memory cell and the data reading circuit;a third transistor; anda fixed potential line,wherein:the third transistor is configured to control a conductive state between ...

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Номер записи: 133
01-09-2022 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20220276839A1
Автор: AOKI Takeshi, FURUTANI Kazuma, IKEDA Takayuki, ISHIZU Takahiko, Yamazaki Shunpei
Принадлежит:

A semiconductor device includes a CPU and an accelerator that includes a first memory circuit, a driver circuit, and a product-sum operation circuit. The first memory circuit includes a first data retention portion, a second data retention portion, and a data reading portion. The first data retention portion, the second data retention portion, and the data reading portion each include a first transistor. The first transistor contains a metal oxide in a channel formation region. First data stored in the first data retention portion and second data stored in the second data retention portion are each weight data input to the product-sum operation circuit. The product-sum operation circuit has a function of performing product-sum operation of the weight data and input data input through the driver circuit. The product-sum operation circuit and the driver circuit each include a second transistor. The second transistor contains silicon in a channel formation region. The first transistor and the second transistor are stacked. 1. A semiconductor device comprising:a CPU; andan accelerator,wherein the accelerator comprises a first memory circuit, a driver circuit, and a product-sum operation circuit,wherein the first memory circuit comprises a first data retention portion, a second data retention portion, and a data reading portion,wherein the first data retention portion, the second data retention portion, and the data reading portion each comprise a first transistor,wherein the first transistor comprises a first semiconductor layer comprising a metal oxide in a channel formation region,wherein first data stored in the first data retention portion and second data stored in the second data retention portion are each weight data input to the product-sum operation circuit,wherein the product-sum operation circuit is configured to perform product-sum operation of the weight data and input data input through the driver circuit,wherein the product-sum operation circuit and the ...

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Номер записи: 134
01-09-2022 дата публикации

DISPLAY DEVICE

Номер: US20220278139A1
Автор: IKEDA Takayuki, KUNITAKE Hitoshi, Kusunoki Koji, OIKAWA Yoshiaki, Yamazaki Shunpei
Принадлежит:

A display device with a novel structure is provided. The display device includes a first substrate provided with a plurality of pixels including a display element, and a second substrate including a first conductive layer provided with a plurality of first openings. The first conductive layer has a function of an antenna capable of transmitting and receiving a radio signal. The pixel and the first opening include a region where the pixel and the first opening overlap with each other. The second substrate includes an element layer. The element layer includes a transistor. The transistor has a function of an amplifier capable of amplifying the radio signal. The transistor each includes a semiconductor layer including a metal oxide in a channel formation region. The metal oxide contains In, Ga, and Zn. 1. A display device comprising:a first substrate with a plurality of pixels comprising a display element; anda second substrate comprising a first conductive layer with a plurality of first openings,wherein the first conductive layer is configured to be an antenna capable of transmitting and receiving a radio signal, andwherein the pixels and the first openings each comprise a region where the pixel and the first opening overlap with each other.27-. (canceled)8. The display device according to claim 1 , a third conductive layer configured to be an antenna capable of transmitting and receiving a first radio signal; and', 'a fourth conductive layer having a function of configured to be an antenna capable of transmitting and receiving a second radio signal, and, 'wherein the first conductive layer compriseswherein the shape of the third conductive layer is different from the shape of the fourth conductive layer.9. The display device according to claim 1 ,wherein the second substrate is a glass substrate.10. The display device according claim 1 ,wherein the second substrate is a flexible substrate.11. A display device comprising:a first substrate with a plurality of pixels ...

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Номер записи: 135
01-09-2022 дата публикации

DISPLAY DEVICE

Номер: US20220278187A1
Автор: IKEDA Takayuki, Kobayashi Hidetomo, Yamazaki Shunpei
Принадлежит:

A display device with high design flexibility that can be designed easily is provided. One embodiment of the present invention includes a first substrate () provided with a driver circuit including first and second pulse output circuits (__), a second substrate () provided with a display unit () including a first pixel circuit including a first source wiring (SL_) and a first contact portion (SC_) and a second pixel circuit including a second source wiring (SL_) adjacent to the first source wiring and a second contact portion (SC_) electrically connected to the second source wiring, and a connection unit where the first and second substrates are electrically connected to each other. The display unit is placed to overlap with the driver circuit, the first and second pulse output circuits are electrically connected to the first and second pixel circuits respectively through the first and second contact portions, the first pulse output circuit is placed on an opposite side of a straight line connecting the first and second contact portions from the second pulse output circuit, and the connection unit includes a wiring containing copper. 1. A display device comprising:a first silicon substrate provided with a driver circuit comprising a first pulse output circuit and a second pulse output circuit;a second silicon substrate provided with a display unit comprising a first pixel circuit comprising a first source line and a first contact portion electrically connected to the first source line and a second pixel circuit comprising a second source line adjacent to the first source line and a second contact portion electrically connected to the second source wiring line; anda connection unit where the first silicon substrate and the second silicon substrate are electrically connected to each other,wherein the display unit is placed to overlap with the driver circuit, wherein the first pulse output circuit is electrically connected to the first pixel circuit through the first ...

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Номер записи: 136
23-04-2020 дата публикации

Semiconductor Device and Method for Driving Semiconductor Device

Номер: US20200126991A1
Автор: ENDO Yuta, IKEDA Takayuki, Kato Kiyoshi, Kimura Hajime, Sugao Junpei, Yamazaki Shunpei
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A semiconductor device with a large storage capacity per unit area is provided. A semiconductor device includes a memory cell. The memory cell includes a first conductor; a first insulator over the first conductor; a first oxide over the first insulator and including a first region, a second region, and a third region positioned between the first region and the second region; a second insulator over the first oxide; a second conductor over the second insulator; a third insulator positioned in contact with a side surface of the first region; and a second oxide positioned on the side surface of the first region, with the third insulator therebetween. The first region includes a region overlapping the first conductor. The third region includes a region overlapped by the second conductor. The first region and the second region have a lower resistance than the third region. 1. A semiconductor device comprising a memory cell , a first conductor;', 'a first insulator over the first conductor;', 'a first oxide over the first insulator, the first oxide comprising a first region, a second region, and a third region positioned between the first region and the second region;', 'a second insulator over the first oxide;', 'a second conductor over the second insulator;', 'a third insulator in contact with a side surface of the first region; and', 'a second oxide positioned on a side of the first region, with the third insulator between the second oxide and the first region,, 'wherein the memory cell compriseswherein the first region and the first conductor overlap each othre,wherein the third region and the second conductor overlap each other,wherein each of the first region and the second region has a lower resistance than the third region.2. (canceled)3. The semiconductor device according to claim 1 ,wherein each of the first conductor, the second conductor, the first insulator and the second insulator comprises an opening, andwherein the second oxide is positioned in the ...

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Номер записи: 137