ЛАЗЕРНЫЙ ПРИБОР С ВНУТРЕННЕ ПРИСУЩЕЙ БЕЗОПАСНОСТЬЮ, СОДЕРЖАЩИЙ ЛАЗЕР ПОВЕРХНОСТНОГО ИЗЛУЧЕНИЯ С ВЕРТИКАЛЬНЫМ РЕЗОНАТОРОМ

Изобретение относится к лазерной технике. Лазерный прибор содержит матрицу лазеров поверхностного излучения с вертикальным резонатором (VCSEL), расположенных на одной и той же полупроводниковой подложке (101). Лазеры содержат первый электрод (100), первый распределенный брэгговский отражатель (110), активный слой (115), второй распределенный брэгговский отражатель (120) и второй электрод (125). Активный слой (115) находится между указанными брэгговскими отражателеми (110, 120). Электроды (100 и 125) выполнены с возможностью подачи электрического тока через активный слой (115) для генерирования лазерного излучения (150). Лазеры являются нижними излучателями, которые выполнены с возможностью испускания лазерного излучения (150) сквозь полупроводниковую подложку (101). Лазерный прибор содержит оптическую структуру (140), выполненную с возможностью увеличения угла (156) испускания лазерного излучения (150) для повышения безопасности лазерного прибора для глаз. Указанная структура (140) является ...

Verfahren zur Erzeugung ultrakurzer optischer Impulse

Laserdioden-Anordnung mit externem Resonator

Laserdioden-Anordnung (10) zur Erzeugung von einmodiger, durchstimmbarer Laserstrahlung (15), mit einer Laserdiode (11), die eine Rückfacette (16) und eine Frontfacette (17) aufweist und einen ersten Resonator (R1) bildet, und mit einem daran angekoppelten externen Resonator (R2), der wenigstens eine optische Transmissionskomponente (30) und wenigstens ein wellenlängenselektives optisches Reflexionselement (40, 50) aufweist und von der Laserdiode (11) emittiertes Laserlicht (13) in den ersten Resonator (R1) zurückkoppelt, dadurch gekennzeichnet, daß die Laserstrahlung (15) über die Rückfacette (16) der Laserdiode (11) auskoppelbar ist, wobei das Verhältnis der Reflektivität der Rückfacette (16) zur Reflektivität des optischen Reflexionselements (40) sehr viel kleiner als 1 ist.

LICHTEMITTIERENDES ELEMENT UND VERFAHREN ZU SEINER HERSTELLUNG

Dieses lichtemittierende Element ist mit einer laminierten Struktur 20, die aus einem GaN-basierten Verbundhalbleiter gebildet ist, ausgestattet, wobei die laminierte Struktur darin laminiert Folgendes aufweist: eine erste Verbundhalbleiterschicht 21, die eine erste Oberfläche 21a und eine zweite Oberfläche 21b auf der Rückseite der ersten Oberfläche 21a enthält; eine aktive Schicht 23, die zu der zweiten Oberfläche 21b der ersten Verbundhalbleiterschicht 21 weist; und eine zweite Verbundhalbleiterschicht 22, die eine erste Oberfläche 22a, die zu der aktiven Schicht 23 weist, und eine zweite Oberfläche 22b auf der Rückseite der ersten Oberfläche 22a enthält. Das lichtemittierende Element ist außerdem mit Folgendem ausgestattet: einer ersten Lichtreflexionsschicht 41, die auf der Seite der ersten Oberfläche 21a der ersten Verbundhalbleiterschicht 21 vorgesehen ist; und einer zweiten Lichtreflexionsschicht 42, die auf der Seite der zweiten Oberfläche 22b der zweiten Verbundhalbleiterschicht ...

Optical integrated circuit

A semiconductor laser suitable for incorporation into integrated circuits by providing the laser device with a short resonator dimensioned so as to restrict the power consumption of the device to about 1 mW or less. This is made possible by improving the optical confinement, carrier confinement and the reflectivity of end faces in the lasing cavity with a short length and a narrow stripe width of the cavity. Double-layered mirrors are formed at the two opposed ends of the resonator by depositing a film of dielectric insulating material directly on each end and covering the film with a layer of metal.

Device Coupon

A distributed feedback laser (DFB) comprises an active waveguide 104 with a reflective facet 108. Wherein the distributed feedback laser is prepared by etching a grating 106 for example, a Bragg grating into the active waveguide 104 and etching an output facet into the active waveguide 104. An output facet 114 is etched into the active waveguide such that the grating is located between the reflective facet 108 and the output facet 114. The grating may be located above or underneath an active quantum well layer. Wherein an optoelectronic device comprises a distributed feedback laser characterised by an output waveguide being butt coupled to the active waveguide. The optoelectronic device may be micro-transfer printed using a device coupon using said distributed feedback laser by adhering the device coupon 102 to a stamp and depositing the device coupon onto a platform wafer 118.

ELECTRICALLY MODULATED DIODE LASER

Channelizer switch

SEMICONDUCTOR LASER DEVICE FOR USE IN A SEMICONDUCTOR LASER MODULE AND OPTICAL AMPLIFIER

A single semiconductor laser deviceused in a semiconductor laser module of an optical amplifier and having a first light emittingstripe with a diffraction grating and at least one othelight emitting stripe with a diffraction grating and which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface

N-TYPE MODULATION-DOPED MULTI QUANTUM WELL SEMICONDUCTOR LASER DEVICE

An n-type modulation dope multiple quantum well semiconductor laser having a multiple quantum well structure comprising a heterojunction structure of a well layer and a barrier layer, wherein the well layer is made of a nondoped semiconductor material, the barrier layer is made of a semiconductor material modulation-doped with an n-type dopant, a low-reflectance film is formed on the front edge face, a high-reflectance film is formed on the back edge face, the cavity length is 800 .mu.m or more, and the mirror loss (.alpha.m) expressed by .alpha.m=(1/2L)ln(1/(Rf.Rr)) (where L is the cavity length (cm), Rf is the reflectance of the front edge face, and Rr is the reflectance of the back edge face) is 15 cm-1 or less. The output of the laser is high compared with conventional nondoped MQW semiconductor lasers, and the industrial value of the laser used as, e.g., a 1480-nm laser for EDFA excitation is high.

Q-MODULATED SEMICONDUCTOR LASER WITH ELECTRO-ABSORPTIVE GRATING STRUCTURES

A Q-modulated semiconductor laser comprises a .lambda./4-phase-shifted distributed-feedback grating. Two isolated electrodes are deposited on top of the grating, and one electrode is deposited on the back side of the laser substrate as a common ground. The first top-side electrode covers a portion of the grating including the phase-shift region, and provides an optical gain for the laser when a constant current is injected. The second top-side electrode covers the remaining portion of the grating away from the phase-shift region, which acts as a Q- modulator of the laser. An electrical signal is applied on the second electrode to change the absorption coefficient of the waveguide in the modulator section, resulting in a change in the Q-factor of the laser, and consequently the lasing threshold and output power. The integrated Q-modulated laser has advantages of high speed, high extinction ratio, low wavelength chirp and low cost.

SEMICONDUCTOR LASER DEVICE

External resonator-type lasers as configurations for narrowing the spectral line widths of semiconductor lasers to approximately 10 kHz suffer from the problem that a large number of components are required and need to be assembled with high accuracy, and thus, control circuits become complicated. Wavelength variable lasers based on DFB lasers have also been known, but even wavelength variable lasers based on DFB lasers have limits in narrowing of spectrum line widths because it is difficult to uniformly form long resonators due to production variation. The semiconductor laser device according to the present invention has a semiconductor laser that oscillates in a single mode and has a low-loss optical wave circuit using quartz glass arranged on a common substrate. The optical wave circuit is configured such that a part of light outputted from the semiconductor laser propagates a certain length of an optical path, is reflected by a reflector, and returns to the semiconductor laser. Alternatively ...

SEMICONDUCTOR LASER MODULE AND FIBER AMPLIFIER AND OPTICAL COMMUNICATIONS SYSTEM USING THE SAME

Disclosed is a semiconductor laser module which is advantageous as a pumping source for Raman amplification because of its high optical output and excellent wavelength stability. The module comprises a Fabry-Perot semiconductor laser device to which a fiber Bragg grating having a wavelength selectivity and showing a specific reflectivity with respect to a specific wavelength is optically coupled, wherein given that a cavity length of the semiconductor laser device is L (.mu.m), a reflection bandwidth of the fiber Bragg grating is .DELTA..lambda., (nm) and a reflectivity of said front facet is R1 (%) and a peak reflectivity of said optical feedback part is R2 (%), following equations are satisfied among L, R1 and R2 1000 .mu.m .ltoreq. L .ltoreq. 3500 .mu.m, 0.01% .ltoreq. R1 + c2R2 .ltoreq. 4% and R1/R2 .ltoreq. 0.8 where c represents a coupling efficiency between the semiconductor laser device and the fiber Bragg grating. It is preferable that 0.2 nm .ltoreq. .DELTA..lambda. .ltoreq. 3 ...

Method for the Generation of Ultra-Short Optical Pulses

Semiconductor source optical pulse to gain switching and soliton transmission system.

TEMPERATURE-STABLE SEMICONDUCTOR LASER HOMOGENEOUS-BEAM

LASER HAS SEMICONDUCTOR HAS VERY WEAK NOISE

Wide band filter/amplifier diode optical resonant waveguide having variable step Bragg network placed waveguide and wavelength variation following derivative offset resonant reflections first/higher second optical frequency.

The optical resonant waveguide (50) has a part in a waveguide (3) between reflectors (13,40). The second network is a Bragg network with variable steps, and has a section near the first reflector and one far from it. The Bragg wavelength variation represents a network section derivative of the Bragg wavelength with respect to an offset. The offset follows continuously the resonant reflections between a first optical frequency and a second higher optical frequency.

INFRA-RED SOURCE OF LIGHT INCLUDING/UNDERSTANDING a LASER HAS SEMICONDUCTOR ASSOCIATES HAS MEANS OF SELECTION OF MODE AND CONTROL IN POWER

SOURCE LUMINEUSE INFRAROUGE A LASER. CETTE SOURCE COMPREND UN LASER 15 MONTE SUR UNE EMBASE 20, UN MIROIR 26 QUI ASSURE LA SELECTION DE MODE, UN PHOTODETECTEUR 32 SITUE DERRIERE CE MIROIR ET RELIE A CELUI-CI PAR UNE FIBRE OPTIQUE 30, UNE FIBRE 22 GUIDANT LE FAISCEAU UTILE. CES ELEMENTS SONT TENUS PAR DES SUPPORTS 24, 28 EN RESINE, REPOSANT SUR UNE SEMELLE 34. APPLICATION AUX TELECOMMUNICATIONS OPTIQUES. INFRARED LASER LIGHT SOURCE. THIS SOURCE INCLUDES A LASER 15 MOUNTED ON A SOCKET 20, A MIRROR 26 WHICH ENSURES THE MODE SELECTION, A PHOTODETECTOR 32 LOCATED BEHIND THIS MIRROR AND CONNECTED TO THIS BY AN OPTICAL FIBER 30, A FIBER 22 GUIDING THE USEFUL BEAM. THESE ELEMENTS ARE HELD BY RESIN SUPPORTS 24, 28, BASED ON A SOLE 34. APPLICATION TO OPTICAL TELECOMMUNICATIONS.

MULTI-WAVELENGTH SURFACE PLASMON LASER

Disclosed is a multi-wavelength surface plasmon laser which can emit surface plasmon at a plurality of wavelengths at the same time. The multi-wavelength surface plasmon laser may include an active layer of which the thickness is changed according to the location thereof to generate light with different wavelengths according to the location, and a metal cavity of which the length is changed according to the position thereof. Light with different wavelengths generated from the active layer can generate the surface plasmon with different wavelengths on the interface of a metal layer and a semiconductor layer. The generated surface plasmon with different wavelengths is resonated by the metal cavity of which the length is changed according to the location thereof to be emitted to the outside. COPYRIGHT KIPO 2016 ...

LOW COST INGAAIN BASED LASERS

A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length lc and width bm. Another sequence of lithography and etching is used to form a ridge structure with width w on top of the mesa. The etching step also forming mirrors, or facets, on the ends of the laser waveguide structures. The length ls and width bs of the chip can be selected as convenient values equal to or longer than the waveguide length lc and mesa width bm, respectively. The waveguide length and width ...

EDGE-EMITTING SEMICONDUCTOR LASER

The invention relates to an edge-emitting semiconductor laser comprising - a semiconductor body (1) which comprises at least two stripe emitters (10) that are arranged adjacent to each other in the transverse direction (101), each stripe emitter (10) comprising at least one active zone (2) that is equipped to generate electromagnetic radiation; - at least two facets (11) on the active zones (2), said facets forming at least one resonator (33) for at least one of the stripe emitters (10); and - at least two contact surfaces (3) which are mutually spaced in the transverse direction (101) and which are applied on an outer surface (12) of the semiconductor body (1), wherein - each stripe emitter (10) is uniquely associated with one contact surface (3), - current is impressed into at least one of the stripe emitters (10) via the contact surfaces (3) during the operation of the semiconductor laser (100), and - at least two of the stripe emitters (10) can be electrically operated separately from ...

Polarization-mode selective semiconductor laser with a bending channel stripe, apparatus including the same and optical communication system using the same

A polarization-mode selective semiconductor laser includes a semiconductor laser structure including an active layer for generating gain spectra for the first and second different polarization modes and a diffraction grating formed with a uniform pitch over the laser structure. The laser structure includes a first DFB reflector portion with a first channel stripe and a second DFB reflector portion with a second channel stripe connected to the first stripe channel. The first DFB reflector portion and the second DFB reflector portion is serially arranged in a cavity direction of the laser. The first and second stripe channels are bent relative to each other such that a Bragg wavelength for the first polarization mode is coincident with a gain peak wavelength for the first polarization mode in the first DFB reflector portion, to make the first polarization mode dominant in the first DFB reflector portion, and that a Bragg wavelength for the second polarization mode is coincident with a gain ...

External cavity laser with multiple stabilized modes

A laser apparatus for providing a stabilized multi mode laser beam includes an external cavity for providing an optical path for generating a laser beam which is stimulated by a gain medium, where the external cavity has first spectral characteristics, and a mode-selecting filter positioned within the optical path and having second spectral characteristics. The first characteristics and the second characteristics are adjusted to each other, so that the laser beam has at least two selected modes.

Injector emitter

Injection emitters (light-emitting diodes, superluminescent emitters) are used in the form of highly-efficient solid state radiation sources within a large wavelength range and for wide field of application, including general illumination using white light emitters provided with light-emitting diodes. Said invention also relates to superpower highly-efficient and reliable injection surface-emitting lasers, which generate radiation in the form of a plurality of output beams and which are characterized by a novel original and efficient method for emitting the radiation through the external surfaces thereof.

SINGLE LONGITUDINAL MODE LASER DIODE SYSTEM

A semiconductor laser diode system may include a single longitudinal mode laser diode and a feedback system that monitors and controls the emission characteristics of the laser diode. The laser diode may include a gain medium and an optical feedback device. The feedback system may include a wavelength discriminator, an optical detector, a microprocessor, and a laser controller. Such a semiconductor laser diode system may be used to produce laser light having coherence length, wavelength precision, and wavelength stability that is equivalent to that of a gas laser. Accordingly, such a semiconductor laser diode system may be used in place of a traditional gas laser. 1. A semiconductor laser diode system , comprising:a semiconductor laser source having a laser cavity;an optical feedback device, wherein the optical feedback device is a three-dimensional optical element having a Bragg grating recorded therein, and wherein the Bragg grating causes a narrowband portion of radiation emitted from the laser source to be fed back into the laser cavity, the optical feedback device being configured to cause the laser diode to achieve single longitudinal mode at a desired wavelength; anda feedback system that monitors emission characteristics of the laser diode, the feedback system comprising a processor that is configured to adjust one or more control characteristics of the laser diode to cause the laser diode to achieve and maintain a single longitudinal mode condition using only output power characteristics of the laser diode.2. The semiconductor laser diode system of claim 1 , wherein the Bragg grating causes the narrowband portion of the radiation emitted from the laser source to be fed back into the laser cavity as seed light at the desired wavelength.3. The semiconductor laser diode system of claim 1 , wherein the Bragg grating causes the narrowband portion of the radiation emitted from the laser source to be reflected back into the laser cavity as seed light at the ...

Infrared illumination device configured with a gallium and nitrogen containing laser source

A light source system or apparatus configured with an infrared illumination source includes a gallium and nitrogen containing laser diode based white light source. The light source system includes a first pathway configured to direct directional electromagnetic radiation from the gallium and nitrogen containing laser diode to a first wavelength converter and to output a white light emission. In some embodiments infrared emitting laser diodes are included to generate the infrared illumination. In some embodiments infrared emitting wavelength converter members are included to generate the infrared illumination. In some embodiments a second wavelength converter is optically excited by a UV or blue emitting gallium and nitrogen containing laser diode, a laser diode operating in the long wavelength visible spectrum such as a green laser diode or a red laser diode, by a near infrared emitting laser diode, by the white light emission produced by the first wavelength converter, or by some combination ...

LASER BASED WHITE LIGHT SOURCE CONFIGURED FOR COMMUNICATION

A packaged integrated white light source configured for illumination and communication or sensing comprises one or more laser diode devices. An output facet configured on the laser diode device outputs a laser beam of first electromagnetic radiation with a first peak wavelength. The first wavelength from the laser diode provides at least a first carrier channel for a data or sensing signal.

Semiconductor laser with optimum resonator

Semiconductor diode laser and method of manufacturing same

Semiconductor diode lasers are used inter alia in optical disc systems, laser printers, bar code readers, and glass fibre communication systems. Lasers having a so-called (weakly) index-guided structure are very suitable for many applications inter alia because they can be manufactured comparatively simply and reliably. A disadvantage of the known (weakly) index-guided laser is that the so-called P-I (= optical power-current) characteristic thereof exhibits a kink. Such a kink limits the use of the laser to a relatively low optical power. According to the invention, such a (weakly) index-guided laser has a resonance cavity with a length for which the optical power at which a kink occurs in the P-I characteristic is a maximum. It was a surprise to find that the occurrence of a kink in the P-I curve of such a (weakly) index-guided laser depends on the length of the resonance cavity. Very surprising is the appearance of a maximum value in this kink power as a function of the length of the ...

SEMICONDUCTOR DEVICE

A semiconductor optical device, for example a laser, has a composite optical waveguide comprising a tapered, MQW active waveguide (1), in optical contact with a substantially planar, passive waveguide (2). The fundamental optical mode supported by the composite waveguide varies along the length of the composite waveguide so that, in a laser, the laser mode is enlarged and is a better match to single mode optical fibre. A method for making such semiconductor optical devices is also disclosed.

Low loss grating for high efficiency wavelength stabilized high power lasers

A low optical loss and high efficiency grating is placed within a broad-area high-power laser diode or single spatial mode laser diode to narrow the spectral width and stabilize the emission wavelength. Several embodiments of grating configurations are presented, together with the measured results of a reduction to practice of a particular embodiment.

BROADBAND LIGHT SOURCE USING SEMICONDUCTOR OPTICAL AMPLIFIER

PROBLEM TO BE SOLVED: To provide a broadband light source that maintains low gain ripples, without reducing the reflective index at an output end, even in a semiconductor optical amplifier having high gain. SOLUTION: The light source has an active layer 511 as a gain region; a lower clad layer 512 and an upper clad layer 513; a semiconductor optical amplifier 510, having a nonreflective layer 515 formed both ends of the active layer 511 for amplifying an input optical-signal; and a reflector 530, which is disposed outside the semiconductor optical amplifier 510 and allows light output from the semiconductor optical amplifier 510 to be reflected and input again into the active layer 511, thereby minimizing the gain ripples of the semiconductor optical amplifier 510. COPYRIGHT: (C)2005,JPO&NCIPI ...

ИНЖЕКЦИОННЫЙ ИЗЛУЧАТЕЛЬ

Инжекционные излучатели используются в качестве высокоэффективных твердотельных источников излучения в широком диапазоне длин волн, в том числе и светодиодов. Технический результат изобретения: создание высокоэффективных и надежных инжекционных излучателей с поверхностным выводом излучения в виде множества выходных лучей. Сущность: излучатель включает полупроводниковую гетероструктуру, содержащую активный слой, волноводные и ограничительные слои, полупроводниковый слой втекания излучения и слои металлизации. В гетероструктуре вдоль продольной оптической оси сформирована последовательность из чередующихся областей генерации излучения и вывода излучения. В каждой области генерации две продольные наружные поверхности гетероструктуры и две ее продольные боковые стороны окружены веществами с минимально возможными значениями показателей преломления по отношению к эффективному показателю преломления гетероструктуры в области генерации и с максимально возможными значениями коэффициентов отражения ...

Halbleiterlaservorrichtung

Semiconductor lasers

PCT No. PCT/GB83/00035 Sec. 371 Date Oct. 11, 1983 Sec. 102(e) Date Oct. 11, 1983 PCT Filed Feb. 8, 1983 PCT Pub. No. WO83/02856 PCT Pub. Date Aug. 18, 1983.A semiconductor laser is constructed such that at least a part of the laser optical feedback is provided by an external reflector spaced from the semiconductive material of the laser so as to form a composite optical cavity bounded by the semiconductive material and the reflector. The external reflector is supported on a mount constructed such that in response to changes in temperature the mount moves the external reflector relative to the adjacent surface of the semiconductive material so as to provide the external part of the optical cavity with a thermal coefficient substantially matched with the mode wavelength expansion coefficient of the internal part of the cavity. In another embodiment the external reflector is supported on a mount constructed such that in response to changes in temperature it moves the external reflector relative ...

Q-modulated semiconductor laser

SEMICONDUCTOR LASER

TUNABLE LASER WITH THERMALLY REGULATION EXTERNAL RESONATOR

FABRY-PEROT LASER WITH WAVELENGTH CONTROL

INJECTION LASER

MEMS-TUNABLE SHORT CAVITY LASER

A MEM S-iunable source includes a short-cavity laser optimized for performance and reliability in SSOCT imaging systems, spectroscopic detection systems, and other types of detection and sensing systems. A MEMS-tunable short cavity laser with a large free spectral range cavity, fast tuning response and single transverse and longitudinal mode operation is disclosed. A MEMS-actuation mechanism including a stress- engineering silicon nitride membrane with multiple supporting struts enabling flat and wide frequency response is disclosed. The supports for low-ripple operation of the tunable source are also discussed.

Semiconductor laser device

Semiconductor laser diode package

SEMICONDUCTOR LASER DIODE PACKAGE, PARTICULARLY FOR HAVING HIGH POWER SEMICONDUCTOR LASER DIODE WITH LONG CAVITY LENGTH

PURPOSE: A semiconductor laser diode package is provided to be compatible with an optical system by filling the thin filler inside a penetration hole. CONSTITUTION: A semiconductor laser diode package includes a stem(110), a heat sink(112), a semiconductor laser diode(115), and a filler(130). The stem(110) has a predetermined thickness, and forms a penetration hole on a central part. The heat sink(112) is installed to be protruded from a certain plane of the stem(110) around the penetration hole. The semiconductor laser diode(115) is installed on the heat sink(112). The filler(130) is mounted on a rear part of the semiconductor laser diode(115), and is filled within the penetration hole in a thinner thickness than a thickness of the stem(110). © KIPO 2006 ...

SEMICONDUCTOR LASER DEVICE, SEMICONDUCTOR LASER MODULE, AND OPTICAL FIBER AMPLIFIER USING SEMICONDUCTOR LASER MODULE

A semiconductor laser device having two active layer stripe structures. A cross section of one of the stripe structures includes an n-InP substrate (1), n-InP clad layer (2), a lower GRIN-SCH layer (3b), an active layer (4b), an upper GRIN-SCH layer (5b), a p-InP clad layer (6), and a p-InGaAsP contact layer (7) formed in this order. Moreover, a high reflection film (12) is arranged at the reflection side end surface and a low reflection film (13) is arranged at the emission side end surface. On the p-InGaAsP contact layer (7), a p-side electrode (8b) is arranged partly and a non-current poured region (14) is formed at the remaining area.

SEMICONDUCTOR LASER MODULE, OPTICAL AMPLIFIER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LASER MODULE

A semiconductor laser module which makes an optical fiber (8) couple two laser beams emitted from a semiconductor device (2) by orthogonal polarization combination. The optical fiber (8) is a polarization reserve fiber and so positioned that two orthogonal main axes of the polarization reserve fiber and the two beams may make angles of about 45∘in their respective polarization directions.

WAVELENGTH SELECTABLE DEVICE

An integrated semiconductor laser device capable of emitting light of selected wavelengths includes multiple ring lasers of different cavity lengths coupled in series or in parallel to a common output to produce an output beam having a wavelength corresponding to the selected ring lasers.

Semiconductor laser apparatus and fabrication method of same, and semiconductor laser module

A cavity length is determined on the basis of a relationship of electric drive power to a range of optical output power over 50 mW, for cavity length to be constant as a parameter in a range over 1000 μm, so that the electric drive power is vicinal to a minimum thereof in correspondence to a desirable optical output power. If the optical output is 360 mW for example, a cavity length of 1500 μm is determined to be selected.

Hybrid tunable Bragg laser

A hybrid tunable Bragg laser including a double heterostructure gain section, a Bragg reflector section optically coupled to said gain section, and an optical extension constructed to yield a plurality of longitudinal modes. Preferably, the optical section has a predetermined length and effective reflectivity adapted to yield the plurality of longitudinal modes.

Monolithic III-V nanolaser on silicon with blanket growth

A nanolaser includes a silicon substrate and a III-V layer formed on the silicon substrate having a defect density due to differences in materials. A laser region is formed on or in the III-V layer, the laser region having a size based upon the defect density.

Laser diode generating passive mode and method of creating optical pulse using the same diode

Provided are a laser diode generating passive mode locking that does not contain non-linear sector of an SA, and a method of creating an optical pulse using the same diode. The laser diode includes a DFB sector serving as a reflector and a gain sector. The gain sector is connected to the DFB sector and includes an as-cleaved facet formed at the end of the gain sector. When a current less than a threshold current is applied to the DFB sector to allow the DFB sector to operate as a reflector, passive mode locking occurs swiftly and therefore a sector of the SA is not required, which makes manufacturing simple. Also, it is possible to effectively extend a frequency variable region compared to using of the SA.

Tunable spectroscopic source with power stability and method of operation

A laser system for a spectroscopic catheter system utilizes an overmoded cavity in order to reduce mode hoping induced power fluctuations during wavelength scanning. In the preferred embodiment, a semiconductor gain medium is used to reduce cost. A fiber pigtail is used to define the laser cavity, which has a tight cavity mode spacing of less that 15 Gigahertz. A diffraction grating is used as the tuning element. A cylindrical lens is used to reduce alignment tolerances and thereby increase manufacturability.

Semiconductor laser and a method for producing the same

A semiconductor laser including a semiconductor substrate and a multilayer structure formed upon the semiconductor substrate, the multilayer structure including an active layer, a pair of cladding layers between which the active layer is interposed, and a current confinement layer for injecting a current into a stripe-shaped predetermined region of the active layer. The current confinement layer comprises a first current blocking layer formed in regions thereof excluding a region corresponding to the predetermined region of the active layer. The first current blocking layer has a refractive index higher than a refractive index of the pair of cladding layers and an energy band gap larger than an energy band gap of the active layer.

Monolithic array of independently addressable diode lasers

A monolithic array of two or more independently addressable, closely spaced diode lasers having low thermal, electrical, and optical crosstalk. An isolation groove is formed between the adjacent laser elements, which are defined by rib loaded waveguides created by etching mesas above a planar active multilayer waveguide. Separate electrical connections to the ribs, and a common electrical connection to the substrate, enable individual addressing of each laser element. Selectively added blocking layers and/or insulating layers are added to the structure to provide improved electrical and/or thermal isolation.

Semiconductor laser diode

In an edge emitting laser having a window region with a ridge-waveguide structure, particularly, in a short cavity type of a laser operated with a low current, there has been a problem of its operating current being increased due to current leakage of the window portion. To solve this problem, in the window region, between an n-type substrate and a p-type cladding layer, a semi-insulating semiconductor layer into which Ru is doped is inserted. Alternatively, a stacked structure of a Ru-doped layer and a Fe-doped layer is introduced.

Infrared illumination device configured with a gallium and nitrogen containing laser source

A light source system or apparatus configured with an infrared illumination source includes a gallium and nitrogen containing laser diode based white light source. The light source system includes a first pathway configured to direct directional electromagnetic radiation from the gallium and nitrogen containing laser diode to a first wavelength converter and to output a white light emission. In some embodiments infrared emitting laser diodes are included to generate the infrared illumination. In some embodiments infrared emitting wavelength converter members are included to generate the infrared illumination. In some embodiments a second wavelength converter is optically excited by a UV or blue emitting gallium and nitrogen containing laser diode, a laser diode operating in the long wavelength visible spectrum such as a green laser diode or a red laser diode, by a near infrared emitting laser diode, by the white light emission produced by the first wavelength converter, or by some combination ...

External resonator-type wavelength tunable laser device

The present invention provides an external resonator-type wavelength tunable laser device that can properly fulfill a wavelength tuning function even with the use of a planar wavelength tunable reflector involving a considerable level of residual reflection. The external resonator-type wavelength tunable laser device includes a planar reflection structure enabling a reflection spectral peak wavelength to be varied and a semiconductor element as a semiconductor gain medium. The semiconductor gain medium is composed of a multiple quantum well in which product ·L of optical confinement constant and semiconductor gain medium length L (m) of a gain layer is at least 25 m and at most 40 m and in which gain peak wavelength 0 (nm) observed during carrier injected with a maximum modal gain equal to an internal loss of the semiconductor gain medium is larger than 3·R/2+(c+35) and smaller than ((·L)/7+8)·R+((·L)+c+45). Here, R (dB) denotes a reflectance difference, and c (nm) denotes a wavelength ...

LASER APPARATUS AND RESERVOIR COMPUTING SYSTEM

To realize a reservoir computing system with a small size and reduced learning cost, provided is a laser apparatus including a laser; a feedback waveguide that is operable to feed light output from the laser back to the laser; an optical splitter that is provided in a path of the feedback waveguide and is operable to output a portion of light propagated in the feedback waveguide to outside; and a first ring resonator that is operable to be optically connected to the feedback waveguide, as well as a reservoir computing system including this laser apparatus. 1. A reservoir computing system comprising: a laser,', 'a feedback waveguide that is operable to feed light output from the laser back to the laser,', 'an optical splitter that is provided in a path of the feedback waveguide and is operable to output a portion of light propagated in the feedback waveguide to outside the feedback waveguide, and', 'a first ring resonator that is operable to be optically connected to the feedback waveguide;, 'a reservoir including a laser apparatus, wherein the laser apparatus includes'}an input node operable to supply the reservoir with an input signal corresponding to input data;an output node operable to output an output value corresponding to light output by the reservoir in response to the input data; andan output section operable to output output data corresponding to the output value.2. The reservoir computing system according to claim 1 , whereinthe laser apparatus further includes one or more second ring resonators, andeach of the one or more second ring resonators is operable to be optically connected to the first ring resonator directly or indirectly via another of the second ring resonators.3. The reservoir computing system according to claim 2 , whereina plurality of the second ring resonators are operable to be optically connected in series, andthe second ring resonator positioned at a first end among the plurality of second ring resonators is operable to be optically ...

Thermally controlled external cavity tuneable laser

An external-cavity tuneable laser includes a gain medium and a tuneable mirror wherein at least the tuneable mirror is in thermal contact with a thermally conductive platform. The tuneable mirror lays substantially horizontally on the thermally conductive platform significantly improving the thermal contact of the tuneable mirror with the platform. A laser beam from the gain medium is directed onto the tuneable mirror, which is mounted substantially horizontally with respect to the thermally conductive platform, by means of a deflector that deflects the beam or a large part of it toward one of the principal surfaces of the tuneable mirror. The resulting laser cavity is a folded cavity. The thermally conductive platform is preferably thermally coupled to a TEC that provides thermal control for the platform. The deflector may be a beam splitter that deflects part of the incoming light and transmits the remaining part. According to a preferred embodiment of the invention, the portion of light ...

Tunable laser source with power stability and its method of operation

A tunable laser system (100) for a spectroscopic catheter system (50) utilizes an overmoded cavity (L) in order to reduce mode hopping induced power fluctuations during wavelength scanning. In the preferred embodiment, a semiconductor gain medium (116) is used to reduce cost. A fiber pigtail (114) is used to define the laser cavity, which has a tight cavity mode spacing (332) of less than 15 Gigahertz. A diffraction grating (140) is used as the tuning element. A cylindrical lens (142) is used to reduce alignment tolerances and thereby increase manufacturability.

Electrically modulated semiconductor laser

L'invention concerne une diode laser (1) à semi-conducteur à modulation électrique directe qui comprend une cavité optique (3) de longueur Lo et un circuit d'alimentation comportant une électrode (50) d'alimentation modulée en forme de ruban de longueur Lé qui recouvre tout ou partie de la cavité optique (3), et qui contribue à délivrer un signal électrique de pompage de la cavité optique à une fréquence de modulation Fe. Elle comprend une cavité électrique (4) de longueur Lé associée à cette électrode (50), telle que no.Lo = k.né.Lé, k étant égal à 1, ou 2, ou 3, ou ..., ou 1/2, ou 1/3, ou ..., no étant l'indice de réfraction de la cavité optique et né l'indice électrique de la cavité électrique, et en ce que Fe = ck'/(2.né.Lé), k' étant un entier supérieur ou égal à 1 et c étant la vitesse de la lumière.

Speckle Reduction Laser and Laser Display Apparatus Having The Same

A speckle reduction laser and a laser display apparatus having the speckle reduction laser are provided. The speckle reduction laser includes a semiconductor unit that comprises an active layer and emits laser light through a first side surface thereof by resonating light generated from the active layer, and a vibration mirror unit disposed adjacent to a second side surface of the semiconductor unit. The laser further includes a mirror, and the resonance of the laser light is generated between the first side surface of the semiconductor unit and the mirror, and a resonance mode of the laser light is changed according to the vibration of the mirror.

Semiconductor laser device having a diffraction grating on a light reflection side

A semiconductor device includes an active layer configured to radiate light, a light reflecting facet positioned on a first side of the active layer, a light emitting facet positioned on a second side of the active layer thereby forming a resonant cavity between the light reflecting facet and the light emitting facet, and a partial diffraction grating having a predetermined length and positioned on a light reflecting side of the resonator. The predetermined length of the partial diffraction grating is selected such that the semiconductor device emits a light beam having a plurality of longitudinal modes within a predetermined spectral width of an oscillation wavelength spectrum of the semiconductor device. The predetermined length of the partial diffraction grating may be set in relation to a length of the resonant cavity, or in relation to a coupling coefficient of the diffraction grating. The semiconductor device may also include another partial diffraction grating positioned on the light emitting side of the laser device.

Semiconductor laser device and semiconductor laser module using the same

In the semiconductor laser device of the present invention, a semiconductor stacked structure including an active layer comprising a strained multi-quantum well structure is formed on a substrate 1, a cavity length is larger than 1000 µm but equal to or smaller than 1800 µm, and a low-reflection film S1 having a reflectance of 3% or less is formed on one facet and a high-reflection film S2 having a reflectance of 90% or more is formed on the other facet. The semiconductor laser module has a structure in which the semiconductor laser device is set to a cooling device constituted by electrically alternately arranging 40 pairs or more of the Peltier elements and holding them by top and bottom ceramic plates and sealed in the package. A grating having a reflection bandwidth of 1.5 nm or less is formed on an optical fiber to be built in.

Halbleiterlaser.

Halbleiterlaser.

LASER DIODE ARRANGEMENT WITH EXTERNAL RESONATOR

SPECTROSCOPIC CATHETER SYSTEM WITH ACHIEVEMENT-STABLE TUNABLE SOURCE OF LIGHT

SEMICONDUCTOR DEVICE

DIODE LASER WITH AN OPTICALLY NONLINEAR CRYSTAL

SINGLE-WAVELENGTH, UNEQUAL-LENGTH-MULTI-CAVITY GRATING-OUTCOUPLED SURFACE EMITTING LASER WITH STAGGERED TUNED DISTRIBUTED BRAGG REFLECTORS

SEMICONDUCTOR LASER DEVICE AND SEMICONDUCTOR LASER MODULE USING THE SAME

A semiconductor laser in which a semiconductor multilayer structure having an active layer and being a strained multiplex quantum well structure is formed over a substrate (1) the cavity length L is 1,000 .mu.m or more and 1,800 .mu.m or less, a low reflectivity film (S1) having a reflectivity of 3 % or less is formed on one end face, and a high reflectivity film (S2) having a reflectivity of 90 % or more is formed on the other end face. A semiconductor module has a structure in which such a semiconductor laser is mounted on a cooling unit comprising forty pairs or more of Peltier elements electrically alternately arranged and two ceramic sheets vertically sandwiching the Peltier elements, and the semiconductor laser and the cooling unit are packaged. In an optical fiber assembled, a diffraction grating having a reflection band width of 1.5 nm or less is incorporated.

TUNABLE SHORT CAVITY LASER SENSOR

Optical systems employ a tunable source which includes a short cavity laser with a large free spectral range cavity, fast tuning response, and single transverse and longitudinal mode operation. Systems for optical spectroscopy with optimized scanning, a system for optical beam steering and a system for a tunable local oscillator are disclosed.

SEMICONDUCTOR LASER DEVICE AND OPTICAL FIBER AMPLIFIER USING THE SAME

A semiconductor laser device with an active layer having a multi-quantum well structure including more than one well layer and more than one barrier layer and having a resonator length of more than 800 .mu.m is disclosed, wherein the active layer includes a doped region which includes at least one well layer and at least one barrier layer adjacent to the well layer. The entire active region, comprising all of the well and active layers may be doped. Adjacent to the active layer are upper and lower optical confinement layers falls having a thickness within a range of from about 20 to about 50 nm. A optical fiber amplifier incorporating the semiconductor laser is also disclosed, including the semiconductor laser device sealed within a package disposed over a cooler, and wherein a light incidence facet of an optical fiber is optically coupled to the optical output power facet of the semiconductor laser device.

METHOD FOR THE GENERATION OF ULTRA-SHORT OPTICAL PULSES

Ultra-short transform-limited optical pulses, to be utilized for high bit-rate transmission systems, are obtained through direct modulation of a semiconductor laser by means of pulses of such a duration as to excite only the first peak of the relaxation oscillations of the cavity of laser, tuned to such a length that the pulse portions that overlap inside the cavity interfere constructively. The pulses emitted by the laser are then made to pass in a fibre with high negative dispersion to compensate for the phase effect due to the chirp.

SEMICONDUCTOR DEVICE

A semiconductor optical device, for example a laser, has a composite optical waveguide comprising a tapered, MQW active waveguide (1), in optical contact with a substantially planar, passive waveguide (2). The fundamental optical mode supported by the composite waveguide varies along the length of the composite waveguide so that, in a laser, the laser mode is enlarged and is a better match to single mode optical fibre. A method for making such semiconductor optical devices is also disclosed.

SEMICONDUCTOR LASER, ELECTRONIC APPARATUS, AND DRIVE METHOD FOR SEMICONDUCTOR LASER

Optoelectronic and electronic devices based on quantum dots having proximity-placed acceptor impurities, and methods therefor

Solid-state optoelectronic and electronic devices that use semiconductor quantum dots for manipulation of photonic or electronic properties include a semiconductor active region forming a quantum dot heterostructure having a plurality of quantum dot layers each having discrete quantum hole states and a p-type impurity layer formed proximate to at least one of the quantum dot layers to provide excess equilibrium hole charge to occupy at least some of the discrete quantum hole states to improve To and other performance characteristics of quantum dot devices.

Strained quantum well laser for high temperature operation

A semiconductor laser having increased reliability and enhanced high temperature operation. The device is based upon GaAs/AlGaAs, and comprises a quantum well active layer that is strained by the inclusion of the indium. The rear facet of the device has a high reflectivity coating, and the front facet reflectivity and cavity length are adjusted based upon the required output power. For high output power at high temperature, long cavity lengths and low front facet reflectivities are used. For low current operation and low output power at high temperature, shorter cavities and higher front facet reflectivities are used. The lasers are capable of reliably operating at temperatures up to and in excess of 100 DEG C.

Semiconductor laser device

Method for stabilizing output of higher harmonic waves and short wavelength laser beam source using the same

A laser beam as fundamental waves which is emitted from a distribution Bragg reflection (DBR) semiconductor laser is incident on an optical waveguide of a light wavelength conversion device in which domain-inverted regions and the optical waveguide are formed in an LiTaO3 substrate. The wavelength of the incident laser beam is then converted so as to obtain higher harmonic waves such as blue light. In the conversion, a drive current to be applied to a DBR portion of the DBR semiconductor laser is changed so as to change an oscillating wavelength of the DBR semiconductor laser, thereby matching the oscillating wavelength with a phase-matched wavelength of the light wavelength conversion device. Thus, the generation of the harmonic waves to be output is stably controlled.

Multi-wavelength surface plasmon laser and optoelectronic integrated circuit including the same

A multi-wavelength surface plasmon laser that simultaneously emits surface plasmons having a large number of wavelengths and includes an active layer whose thickness changes with position, and a metal cavity whose length changes with position so that light of different wavelengths is emitted according to position. Surface plasmons are generated at the interface between a metal layer and a semiconductor layer in response to the light of different wavelengths. The surface plasmons having different wavelengths may be resonated in the metal cavity whose length changes with position and may be emitted to the outside.

Semiconductor laser device having an insulation region

A semiconductor laser device includes a substrate having a first surface and a second surface opposite to the first surface, an active region formed on the second surface of the substrate, a cladding layer formed on the active region, and an insulation region formed in the cladding layer to form on the second surface of the substrate a first laser region having a first size and a second laser region having a second size different from the first size. The first laser region is used for generating a first optical spectrum having a first laser mode channel space. The second laser region is used for generating a second optical spectrum having a second laser mode channel space. A combination of the first optical spectrum and the second optical spectrum forms a single mode laser. Without any gratings, the semiconductor laser device is easy to be fabricated and has a low fabrication cost.

LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME

A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.

EXTERNAL CAVITY LASER WITH SINGLE MODE-HOP-FREE TUNING

External cavity lasers with single mode-hop-free tuning are generally described. In an example, an external cavity tunable laser system includes an external cavity, a substrate, a chirped grating reflector, and a tunable filter. The substrate has a gain region disposed on the substrate and also includes an active waveguide. The external cavity tunable laser system has a cavity length of the external cavity tunable laser system that is defined by at least a first length of the chirped grating reflector, a second length of the gain region, and a third length of the tunable filter. The cavity length also has an inherent external cavity longitudinal mode. Further, the tunable filter and the chirped grating reflector are configured to synchronize to the inherent external cavity longitudinal mode over a tuning range of the tunable filter. 1. An external cavity tunable laser system comprising:an external cavity;a substrate, wherein a gain region is disposed on the substrate;a chirped grating reflector; anda tunable filter, wherein a cavity length of the external cavity tunable laser system is defined by at least a first length of the chirped grating reflector, a second length of the gain region, and a third length of the tunable filter, wherein the cavity length has an inherent external cavity longitudinal mode, and wherein the tunable filter and the chirped grating reflector are configured to synchronize to the inherent external cavity longitudinal mode over a tuning range of the tunable filter.2. The external cavity tunable laser system of claim 1 , wherein the inherent external cavity longitudinal mode is defined at least in part by the cavity length.3. The external cavity tunable laser system of claim 1 , wherein the first length of the chirped grating reflector is variable depending at least on a wavelength of light present in the external cavity.4. The external cavity tunable laser system of claim 1 , wherein the third length of the tunable filter is variable based ...

Integrated semiconductor optical amplifier and laser diode at visible wavelength

An integrated semiconductor optical amplifier-laser diode (SOA-LD) device includes a laser diode (LD) section fabricated on a substrate, a semiconductor optical amplifier (SOA) section fabricated on the substrate adjacent to the LD section; and a trench formed at least partially between the LD section and SOA section to electrically isolate the LD section and the SOA section while maintaining optical coupling between the LD section and the SOA section.

Semiconductor light emitting devices with non-epitaxial upper cladding

The AlGaN upper cladding layer of a nitride laser diode is replaced by a non-epitaxial layer (56), such as metallic silver. If chosen to have a relatively low refractive index value, the mode loss from absorption in the non-epitaxial cladding layer is acceptably small. If also chosen to have a relatively high work-function, the non-epitaxial layer (56) forms an electrical contact to the nitride semiconductors. An indium-tin-oxide layer (62) may also be employed with the non-epitaxial cladding layer. Silver cladding layer may be formed as a grating (96) to provide complex coupling as a DFB laser diode.

Method of manufacturing a semiconductor laser

SEMICONDUCTOR LASER

PURPOSE: To make wavelength of oscillation shorter, by forming a light-guide layer also used as a reservoir for injection carriers so as to obtain SCH structure and besides by making a stripe width smaller than a specified dimension. CONSTITUTION: An active layer 5 is formed of one or more quantum-well layers, its upper and front plane sides are provided with light-guide layers 5a and 5b, respectively, whose forbidden band widths are formed to have middle values between the band widths of clad layers 5a, 5b and those of the quantum well layers, to compose SCH (Separate Confinement Heterostructure). Light guide layers 5a and 5b are made to be 6 microns or less in width, with their internal loss of light propagation being enlarged. The embedded layer 13 part, in which Si is diffused, has an effective refractive index smaller than the active layer 5 part, therefore to obtain refractive-index guided waves. Moreover, in the embedded layer 13 part, a potential barrier to which carriers are sensitive ...

HALBLEITERLASER, BETRIEBSVERFAHREN FÜR EINEN HALBLEITERLASER UND METHODE ZUR BESTIMMUNG DES OPTIMALEN FÜLLFAKTORS EINES HALBLEITERLASERS

In einer Ausführungsform umfasst der Halbleiterlaser (1) eine Halbleiterschichtenfolge (2) basierend auf dem Materialsystem AlInGaN mit mindestens einer aktiven Zone (22) zur Erzeugung einer Laserstrahlung. Eine Wärmesenke (3) ist an die Halbleiterschichtenfolge (2) thermisch angebunden und weist zur Halbleiterschichtenfolge (2) hin einen thermischen Widerstand auf. Die Halbleiterschichtenfolge (2) ist in mehrere Emitterstreifen (4) unterteilt und jeder Emitterstreifen (4) weist in Richtung senkrecht zu einer Strahlrichtung (R) eine Breite (b) von höchstens 0,3 mm auf. Die Emitterstreifen (4) sind mit einem Füllfaktor (FF) von kleiner oder gleich 0,4 angeordnet. Der Füllfaktor (FF) ist so eingestellt, dass im Betrieb Laserstrahlung mit einer maximalen optischen Ausgangsleistung (P) erzeugbar ist.

A q-modulated semiconductor laser

A Q-modulated semiconductor laser comprises an optical gain section 101 and an electro-absorptive modulator section 103, separated by a vertically etched air gap 105 acting as a partially reflecting mirror. The modulator section 103 is placed inside an anti-resonant Fabry-Perot cavity and acts as the rear reflector of the laser. The change of the absorption coefficient in the modulator section results in a change in the Q-factor of the laser, and consequently the lasing threshold and output power. Different embodiments are disclosed, which involve a distributed feedback (DFB) laser, a Fabry-Perot laser, a distributed Bragg reflector (DBR) laser, or a wavelength switchable multi-cavity laser. The integrated Q-modulated laser has advantages of high speed, high extinction ratio, low wavelength chirp and low cost.

Distributed feedback semiconductor laser

A distributed feedback semiconductor laser which has periodic corrugations formed in a layer adjoining a light emitting layer so as to extend in the direction of travel of light and performs laser oscillation by the injection of current into the light emitting layer, in which a part of at least one metal electrode has a TM mode suppressing region disposed at a position where light is essentially distributed in the thickwise direction of the laser. A window region formed of a semiconductor larger in energy gap than the light emitting layer is disposed at both ends of the laser oscillation region in the direction of travel of light, the length of the window region being limited so that no substantial reflection occurs therein.

TUNABLE LASER WITH THERMALLY REGULATION EXTERNAL RESONATOR

RESONATOR

Semiconductor device

HIGH POWER DISTRIBUTED FEEDBACK RIDGE WAVEGUIDE LASER

A distributed feedback ridge waveguide semiconductor laser diode (10) having a waveguide region (22) with a typical thickness of at least 500 nanometers and an effective refractive index difference between the ridge structure (31) and exposed portions of the waveguide region (25) which surround the ridge structure of less than 0.001. This permits the width (W) of the ridge (31) to be expanded beyond 3.5 microns thus translating directly to higher power outputs at 1.55 .mu.m wavelengths, where carrier diffusion and carrier heating limit current density injected into the active region (24).

FABRICATION OF CLEAVED SEMICONDUCTOR LASERS

FABRICATION OF CLEAVED SEMICONDUCTOR LASERS A process is described for making semiconductor lasers with cleaved facets for end mirrors. The process involves electrochemically photoetching slots with deep, narrow cross-sections in a wafer and applying stress to cleave the wafer in the desired place. Extremely short and reproducible semiconductor lasers can be made by this procedure (less than 100, 50 or even 25 .mu.m) which yields extremely useful semiconductor lasers particularly for communication applications. Also, the procedure requires a minimum of skill to produce excellent quality cleaved semiconductor lasers (including short-length lasers) with high yields.

DIODE LASER HAVING REDUCED BEAM DIVERGENCE

The present invention relates to a diode laser having reduced beam divergence. The idea of the present invention is to reduce a beam divergence in the far field by means of a deliberate modulation of the real refractive index of the diode laser. To this end, an area of the diode laser, referred to as the injection zone, is structured with different materials having different refractive indices. The selection of the material can influence the effective refractive index at the respective longitudinal-lateral position. The modulation of the refractive index makes it possible to excite a supermode, the field of which has the same phase (in-phase mode) under the contacts. Light, which propagates under the areas of a lower refractive index, obtains a phase shift of 7C after passing through the index-guiding trenches. Consequently, the in-phase mode is supported and the formation of the out-of-phase mode is prevented. Consequently, in contrast to conventional broad-stripe diode lasers and, in ...

Long semiconductor laser cavity in a compact chip

Long semiconductor laser cavities are placed in relative short length chips through the use of total internal reflection (TIR) surfaces formed through etched facets. In one embodiment, a laser cavity is formed along the perimeter edges of a rectangular semiconductor chip by using three 45° angled TIR facets to connect four legs of a ridge or buried heterostructure (BH) waveguide that defines the laser cavity. In other embodiments, even more TIR facets and waveguide legs or sections are employed to make even longer laser cavities in the shape of rectangular or quadrilateral spirals. These structures are limited in the spacing of adjacent waveguide sections, which if too small, can cause undesirable coupling between the sections. However, use of notches etched between the adjacent sections have been shown to decrease this coupling effect.

Method of manufacturing a semiconductor laser

Provided is a semiconductor laser, wherein (λa−λw) >15 (nm) and Lt<25 (μm), where λw is the wavelength of light corresponding to the band gap of the active layer disposed at a position within a distance of 2 μm from one end surface in a resonator direction, λa is the wavelength of light corresponding to the band gap of the active layer disposed at a position that is spaced a distance of equal to or more than ( 3/10)L and ≦( 7/10)L from the one end surface in a resonator direction, “L” is the resonator length, and “Lt” is the length of a transition region provided between the position of the active layer with a band gap corresponding to a light wavelength of λw+2 (nm) and the position of the active layer with a band gap corresponding to a light wavelength of λa−2 (nm) in the resonator direction.

STRUCTURE AND METHOD FOR THE FABRICATION OF A GALLIUM NITRIDE VERTICAL CAVITY SURFACE EMITTING LASER

A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching. 1. A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL) , comprising a cavity length controlled by etching.2. The VCSEL of claim 1 , wherein an Aluminum (Al) containing layer in the VCSEL's epitaxial structure is used as an etch stop layer for the etching.3. The VCSEL of claim 2 , wherein the etching is carried out by photoelectrochemical etching.4. The VCSEL of claim 1 , wherein an Indium (In) containing layer in the VCSEL's epitaxial structure is used as a sacrificial layer for the VCSEL's substrate removal by the etching.5. The VCSEL of claim 4 , wherein the etching is carried out by photoelectrochemical etching.6. The VCSEL of claim 1 , wherein the VCSEL is a nonpolar or semipolar III-Nitride VCSEL.7. The VCSEL of claim 1 , wherein the VCSEL is grown on a nonpolar or semipolar substrate.8. The VCSEL of claim 1 , wherein a longitudinal mode of the VCSEL is a single mode.9. The VCSEL of claim 1 , wherein the cavity length is controlled after at least partially removing a substrate on which the VCSEL is grown.10. A method of fabricating a III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL) claim 1 , comprising controlling or defining a cavity length of the VCSEL by etching.11. The method of claim 10 , further comprising:providing or fabricating a III-nitride VCSEL structure grown on a III-nitride substrate and comprising an etch stop layer below an active region;fabricating a first cavity mirror for the VCSEL on a first side of the VCSEL structure;attaching the VCSEL structure, at the first cavity mirror, to a submount;etching down to the etch stop layer to control or define the cavity length of the VCSEL; andfabricating a second cavity mirror for the VCSEL on the second side of the VCSEL, wherein the first cavity mirror and the second cavity mirror define the VCSEL's laser cavity having the cavity length.12. ...

LIGHT EMITTING ELEMENT

A light emitting element includes a laminated structure formed by laminating a first light reflecting layer , a light emitting structure , and a second light reflecting layer . The light emitting structure is formed by laminating, from the first light reflecting layer side, a first compound semiconductor layer , an active layer , and a second compound semiconductor layer . In the laminated structure , at least two light absorbing material layers are formed in parallel to a virtual plane occupied by the active layer 1. A light emitting element comprising a laminated structure formed by laminating:a first light reflecting layer;a light emitting structure; anda second light reflecting layer, whereinthe light emitting structure is formed by laminating:from the first light reflecting layer side,a first compound semiconductor layer;an active layer; anda second compound semiconductor layer, andin the laminated structure, at least two light absorbing material layers are formed in parallel to a virtual plane occupied by the active layer.2. The light emitting element according to claim 1 , wherein at least four light absorbing material layers are formed.3. The light emitting element according to claim 1 , wherein{'sub': eq', '0, 'claim-text': {'br': None, 'i': m·λ', 'n', 'L', 'm·λ', 'n, 'sub': 0', 'eq', '0', '0', 'eq, '0.9×{()/(2·)}≤≤1.1×{()/(2·)}'}, 'when an oscillation wavelength is represented by Ao, an equivalent refractive index of a whole of the two light absorbing material layers and a portion of the laminated structure located between the light absorbing material layers is represented by n, and a distance between the light absorbing material layers is represented by L,'}is satisfied.Provided that m is 1 or any integer of 2 or more including 1.4. The light emitting element according to claim 1 , wherein the light absorbing material layers have a thickness of λ0/(4·n) or less.5. The light emitting element according to claim 1 , wherein the light absorbing material ...

SURFACE EMITTING LASER AND OPTICAL COHERENCE TOMOGRAPHY APPARATUS

In order to provide a wavelength tunable surface emitting laser capable of improving a wavelength tuning efficiency, provided is a surface emitting laser, including: a first reflector; a semiconductor cavity including an active layer; and a second reflector, the first reflector, the semiconductor cavity, and the second reflector being formed in the stated order, a gap portion being formed between the first reflector and a semiconductor layer, a cavity length being tunable, in which the surface emitting laser has a high reflectivity structure formed between the gap portion and the semiconductor cavity, and an expression of “(λ/2)×m+λ/8 Подробнее

Wavelength Stabilized Diode Laser

A hybrid external cavity laser and a method for configuring the laser having a stabilized wavelength is disclosed. The laser comprises a semiconductor gain section and a volume Bragg grating, wherein a laser emission from the semiconductor gain section is based on a combination of a reflectivity of a front facet of the semiconductor gain section and a reflectivity of the volume Bragg grating and the reflectivity of the semiconductor gain section and the volume Brag grating are insufficient by themselves to support the laser emission. The hybrid cavity laser further comprises an etalon that provides further wavelength stability. 1. A device configured to generate at least one laser emission , the device comprising:a semiconductor gain section generating a light emission, said semiconductor gain section comprising:a rear facet having a first reflectivity; anda front facet having a second reflectivity, said rear facet and said front facet forming a first resonant cavity having a first plurality of non-lasing resonance, and receive said light emission; and', 'reflect a portion of the received light emission back into the semiconductor gain section, wherein the rear facet of the semiconductor gain section and the volume Bragg grating form a second resonant cavity, overlapping the first resonant cavity, said second resonant cavity generating a second plurality of non-lasing resonances, wherein at least one of said first plurality of non-lasing resonances and a corresponding at least one of said second plurality of non-lasing is substantially coincident, said substantially at least one coincident resonance having a modal gain sufficient to generate corresponding ones of said at least one laser emission., 'a volume Bragg grating, having a known reflectivity, configured to2. The device of claim 1 , wherein the rear facet reflectivity is fixed and the front facet reflectivity is chosen such that the modal gain of the first plurality of resonances is less than said lasing ...

SEMICONDUCTOR LASER DEVICE

A semiconductor laser device of an embodiment comprises: a first electrode having an opening for passage of laser light and arranged on a main surface of a substrate; and a second electrode arranged on a back surface of the substrate. A stacked structural body including an active layer and a photonic crystal layer is arranged between the substrate and the first electrode, and a current confinement layer having an opening for passage of a current is arranged between the stacked structural body and the first electrode. A maximum width of the opening of the current confinement layer is smaller than a maximum width of the opening of the first electrode, and a whole region defined by the opening of the current confinement layer fits within a region defined by the opening of the first electrode as viewed from the first electrode side toward the second electrode side. 1. A semiconductor laser device comprising:a semiconductor substrate having a main surface and a back surface opposing the main surface;a first cladding layer provided on the main surface of the semiconductor substrate;an active layer provided on the first cladding layer;a second cladding layer provided on the active layer;a contact layer provided on the second cladding layer;a first electrode provided on the contact layer;a second electrode provided on the back surface of the semiconductor substrate;a photonic crystal layer provided in one of a space between the first cladding layer and the active layer and a space between the active layer and the second cladding layer; anda current confinement layer provided in the second cladding layer and having a first opening configured to allow a current to pass therethrough,wherein the photonic crystal layer has a basic layer and a plurality of modified refractive index regions each having a refractive index different from a refractive index of the basic layer,the plurality of modified refractive index regions are arranged in a state of being separated from each other ...

Infrared illumination device configured with a gallium and nitrogen containing laser source

A light source system or apparatus configured with an infrared illumination source includes a gallium and nitrogen containing laser diode based white light source. The light source system includes a first pathway configured to direct directional electromagnetic radiation from the gallium and nitrogen containing laser diode to a first wavelength converter and to output a white light emission. In some embodiments infrared emitting laser diodes are included to generate the infrared illumination. In some embodiments infrared emitting wavelength converter members are included to generate the infrared illumination. In some embodiments a second wavelength converter is optically excited by a UV or blue emitting gallium and nitrogen containing laser diode, a laser diode operating in the long wavelength visible spectrum such as a green laser diode or a red laser diode, by a near infrared emitting laser diode, by the white light emission produced by the first wavelength converter, or by some combination thereof. A beam shaper may be configured to direct the white light emission and an infrared emission for illuminating a target of interest and transmitting a data signal. In some configurations, sensors and feedback loops are included.

RAPIDLY TUNABLE LASER ASSEMBLY

A laser assembly for generating an output beam includes a first module assembly, a second module assembly, and a module fastener assembly. The second module assembly is selectively movable relative to the first module assembly to selectively adjust a cavity length, and a pivot axis of a grating in the laser. Further, an arm assembly that retains the grating can be adjusted to adjust the cavity length, and to adjust the plane of the grating face. Moreover, the grating is movable relative to the arm assembly to align the grating. 117-. (canceled)18. A laser assembly for emitting an output beam , the laser assembly comprising:a first module assembly that includes (i) a rigid first frame; and (ii) a gain medium coupled to the first frame, the gain medium having a facet, the gain medium generating a beam that exits the facet along a lasing axis when sufficient current is directed to the gain medium;a second module assembly that includes (i) a rigid second frame; (ii) a diffraction grating positioned in the path of the beam exiting the facet to form an external cavity having a cavity length; (iii) an arm assembly that retains the diffraction grating; and (iv) a pivot assembly that secures the arm assembly to the second frame in a fashion that allows the arm assembly and the grating to effectively pivot about a pivot axis; anda module fastener assembly that is moveable between (i) an unlocked position in which the second frame can be selectively moved relative to the first frame to selectively adjust at least one of the cavity length, and the position of the pivot axis relative to the lasing axis; and (ii) a locked position in which the second module assembly is fixedly secured to the first module assembly to inhibit relative movement between the first frame and the second frame.19. The laser assembly of wherein in the unlocked position claim 18 , the second frame can be selectively moved relative to the first frame to selectively adjust the cavity length.20. The laser ...

AMPLIFIED WIDELY TUNABLE SHORT CAVITY LASER

An amplified tunable source includes a short-cavity laser coupled to an optical amplifier for high power, spectrally shaped operation. The short-cavity laser is coupled to a quantum well semiconductor optical amplifier with two quantum states for broadened gain. Two preferred wavelength ranges of the amplified tunable source include 1200-1400 nm and 800-1100 nm. Also disclosed is the short cavity tunable laser coupled to a fiber amplifier. Various combinations of tunable optical filters with the amplified tunable source to reduce noise or improve spectral purity are presented. 2. The amplified tunable laser source of claim 1 , wherein said resonant tunable optical amplifier is a vertical cavity optical amplifier.5. The amplified tunable laser source of claim 4 , wherein a tunable filter is inserted between a first and second amplification stage claim 4 , to suppress an ASE noise from said first stage claim 4 , and said tunable filter is tuned synchronously with said input tunable radiation. This application is a continuation application of U.S. patent application Ser. No. 13/952,554, filed Jul. 26, 2013, claiming priority to U.S. Provisional Patent Application No. 61/676,712, filed on Jul. 27, 2012. Each application is hereby incorporated by reference.This invention was made under NIH grant R44 CA 101067. The US government has certain rights in this invention.The present invention relates to tunable lasers, widely tunable lasers, wavelength swept sources, amplified tunable lasers, rapidly tuned lasers, and optical systems enabled by these devices.Widely and rapidly tunable lasers are important for a variety of detection, communication, measurement, therapeutic, sample modification, and imaging systems. For example, swept source optical coherence tomography (SSOCT) systems employ repetitively swept tunable lasers to generate subsurface microstructural images of a wide range of materials. In SS-OCT, wide tuning range translates to higher axial measurement resolution, ...

Polarization stable widely tunable short cavity laser

A tunable source includes a short-cavity laser optimized for performance and reliability in SSOCT imaging systems, spectroscopic detection systems, and other types of detection and sensing systems. A short cavity laser with a large free spectral range cavity, fast tuning response and single transverse, longitudinal and polarization mode operation is disclosed. Methods for obtaining polarization stable operation of the tunable source are presented.

TUNABLE SHORT CAVITY LASER SENSOR

Optical systems employ a tunable source which includes a short cavity laser with a large free spectral range cavity, fast tuning response, and single transverse and longitudinal mode operation. Systems for optical spectroscopy with optimized scanning, a system for optical beam steering and a system for a tunable local oscillator are disclosed. 2. The optical system of claim 1 , wherein said external event is at least one from a list comprising an explosion claim 1 , a chemical reaction claim 1 , and a biological event.5. The optical system of claim 1 , wherein the tuning agility of the tunable laser is utilized to scan across information-rich regions of said wavelength range claim 1 , such that the signal to noise ratio is enhanced while minimizing measurement time.6. The optical system of claim 3 , wherein the tuning agility of the tunable laser is utilized to scan across information-rich regions of said wavelength range claim 3 , such that the signal to noise ratio is enhanced while minimizing measurement time.7. The optical system of claim 4 , wherein the tuning agility of the tunable laser is utilized to scan across information-rich regions of said wavelength range claim 4 , such that the signal to noise ratio is enhanced while minimizing measurement time. This application is a continuation application of U.S. patent application Ser. No. 13/952,554, filed Jul. 26, 2013, claiming priority to U.S. Provisional Patent Application No. 61/676,712, filed on Jul. 27, 2012. Each application is hereby incorporated by reference.This invention was made under NIH grant R44 CA 101067. The US government has certain rights in this invention.The present invention relates to tunable lasers, widely tunable lasers, wavelength swept sources, amplified tunable lasers, rapidly tuned lasers, and optical systems enabled by these devices.Widely and rapidly tunable lasers are important for a variety of detection, communication, measurement, therapeutic, sample modification, and imaging ...

Inherently safe laser arrangement comprising a vertical cavity surface emitting laser

A laser arrangement has an array of Vertical Cavity Surface Emitting Lasers (VCSELs) and an optical structure. The VCSELs are on a semiconductor substrate and have: first and second electrodes, first and second Bragg reflectors, and an active layer between the Bragg reflectors. The electrodes provide an electrical current across the active layer. The VCSELs are bottom emitters and emit laser light through the semiconductor substrate. The optical structure increases a laser emission angle of the laser light for eye safety. The optical structure includes a surface structure of the semiconductor substrate. A thickness of the semiconductor substrate is arranged such that laser light emitted by neighboring VCSELs intersect with each other in a plane of the surface structure. The surface structure is arranged such that a homogeneous emission of an emission surface of the semiconductor substrate is enabled.

LASER

An example laser has a rear reflector, a front facet spaced from the rear reflector, and a laser cavity defined between the rear reflector and the front facet. The laser comprises a Bragg grating located in the laser cavity, where a length of the Bragg grating (L) is in a range from 40% to 60% of a distance from the rear reflector to front of the Bragg grating, and a grating strength (Kappa*L) is in a range from 0.6 to 1.5. 1. A laser having a rear reflector , a front facet spaced from the rear reflector and a laser cavity defined between the rear reflector and the front facet , the laser comprising a Bragg grating located in the laser cavity , wherein a length of the Bragg grating (L) is in a range from 40% to 60% of a distance from the rear reflector to front of the Bragg grating and wherein a grating strength (Kappa*L) is in a range from 0.6 to 1.5.2. The laser of claim 1 , wherein the laser is a distributed feedback laser.3. The laser of claim 1 , wherein the Bragg grating is elongated along a length of the laser cavity.4. The laser of claim 1 , wherein the length of the Bragg grating (L) is in a range from 45% to 55% of the distance from the rear reflector to the front of the Bragg grating.5. The laser of claim 1 , wherein the grating strength is in a range from 0.8 to 1.3.6. The laser of claim 1 , wherein the laser is configured to function claim 1 , in operation claim 1 , in Fabry-Perot mode.7. The laser of claim 6 , wherein the laser is configured such that if material defining the laser cavity is cut to form a new front facet not more than 100 nm closer to the rear reflector than the said front facet claim 6 , the new front facet having a same reflectivity as the said front facet claim 6 , the laser claim 6 , in operation claim 6 , functions in the Fabry-Perot mode.8. The laser of claim 1 , wherein the front facet is a cleaved facet.9. The laser of claim 1 , wherein the front facet is coated with an anti-reflection coating.10. The laser of claim 1 , wherein ...

SEMICONDUCTOR LASER DIODE WITH SHORTENED CAVITY LENGTH

A semiconductor laser diode (LD) with a shortened cavity length is disclosed. The LD provides a rectangular substrate and, on the substrate, a cavity structure including a mesa with facets forming the laser cavity. The facets of the mesa are stood back from the side of the substrate. Pads to provide electrical signals are arranged in both sides of the mesa close to the sides of the substrate. 1. A semiconductor laser diode (LD) providing an optical axis along which laser light is emitted , comprising:a rectangular semiconductor substrate; anda mesa including an active layer to generate the laser light, the mesa extending along the optical axis and having two facets in respective ends thereof to define a cavity for the laser light,wherein the facets of the mesa are stood back from respective edges of the substrate each perpendicular to the optical axis.2. The LD of claim 1 ,further providing a depression having a bottom exposing the substrate therein and an end surface common to one of the facets of the mesa.3. The LD of claim 2 ,wherein the substrate provides other two edges extending in parallel to each other along the optical axis, the depression extending from one of the other two edges to the other of the other two edges.4. The LD of claim 2 ,further providing another depression having a bottom exposing the substrate therein and an end surface common to another of the facets of the mesa.5. The LD of claim 4 ,wherein the substrate provides other two edges extending in parallel to each other along the optical axis, the depression extending from one of the other two edges to the other of the other two edges.6. The LD of claim 5 ,wherein the depression continues to the another depression in respective sides of the mesa, the mesa being isolated within the depression and the another depression.7. The LD of claim 2 ,wherein the depression has a longitudinal length from the edge, from which the depression extends inward, to the end surface, andwherein the longitudinal ...

ULTRA-LOW NOISE, HIGHLY STABLE SINGLE-MODE OPERATION, HIGH POWER, BRAGG GRATING BASED SEMICONDUCTOR LASER

A laser including: a gain chip; an external cavity incorporating a Bragg grating; and a baseplate; wherein a first end of the gain chip has a high reflectivity facet forming a first end of the laser cavity; a second end of the gain chip has a low reflectivity facet; and a second part of the external cavity comprises a Bragg grating, supported by the baseplate, the temperature of the baseplate being maintained through a feedback loop; wherein the optical length of the external cavity is at least an order of magnitude greater than the optical length of the gain chip; wherein the Bragg grating is physically long and occupies a majority of the length of the external cavity and is apodized to control the sidemodes of the grating reflection. 1. A laser comprising:a semiconductor gain chip;an external cavity; anda first thermally conductive baseplate;wherein a first end of the gain chip has a high reflectivity facet forming a first end of the laser cavity; a second end of the gain chip has a low reflectivity facet, allowing light generated from the gain chip to be coupled with a first end of the external cavity;and a second part of the external cavity comprises a Bragg grating forming a second end of the laser cavity;wherein the external cavity comprising the Bragg grating is supported by the first thermally conductive baseplate;wherein the optical length of the external cavity is at least an order of magnitude greater than the optical length of the gain chip;wherein the physical length of the Bragg grating is greater than 20 mm and occupies at least 75% of the physical length of the external cavity; andwherein the Bragg grating is apodized to control the sidemodes of the grating reflection.2. The laser of claim 1 , wherein the external cavity comprises an optical fiber.3. The laser of claim 2 , wherein the Bragg grating is a fiber Bragg grating (FBG) within the optical fiber.4. The laser of claim 1 , wherein the external cavity comprises a waveguide.5. The laser of claim ...

Vertical cavity surface emitting laser element and electronic apparatus

[Object] To provide a vertical cavity surface emitting laser element and an electronic apparatus that have high light emission efficiency. [Solving Means] A vertical cavity surface emitting laser element according to the present technology includes: an active layer; a first cladding layer; and an intermediate layer. The first cladding layer is provided on the active layer. The intermediate layer is provided on the first cladding layer, electrons in the intermediate layer having potential higher than potential of electrons in the first cladding layer, holes in the intermediate layer having potential higher than potential of holes in the first cladding layer.

Laser array beam combiner

Disclosed is a laser array beam combiner. A laser array emits a laser beam bundle that is incident on and transmits through a fast-axis collimator to form a one-dimensional quasi-parallel beam bundle A. The first quasi-parallel beam bundle is then incident on and transmits through the cylindrical lens to form a two-dimensional quasi-parallel beam bundle B. The quasi-parallel beam bundle B is then incident on and transmits through the dispersion unit and returns along the original path to the cylindrical lens, and then transmits through the cylindrical lens to be focused onto a common image point. Thus, the wavelengths of various light emitting spots of the laser array can be locked and the individual array beams can be automatically synthesized as a single-point beam bundle, improving the brightness of the laser array.

External Resonator-Type Light Emitting Device

An external resonator type light emitting system includes a light source oscillating a semiconductor laser light and a grating device providing an external resonator with the light source. The light source includes an active layer oscillating the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (4) are satisfied. 1. An external resonator type light emitting system comprising a light source oscillating a semiconductor laser light and a grating device providing an external resonator with said light source;wherein said light source comprises an active layer oscillating said semiconductor laser light;wherein said grating device comprises an optical waveguide comprising an incident face to which said semiconductor laser light is incident and an emitting face of emitting an emitting light having a desired wavelength, a Bragg grating formed in said optical waveguide, and a propagating portion provided between said incident face and said Bragg grating;wherein said optical waveguide comprises a core; [{'br': None, 'sub': 'G', 'Δλ≧0.8 nm\u2003\u2003(1)'}, {'br': None, 'i': 'L', 'sub': 'b', '≦500 μm\u2003\u2003(2)'}, {'br': None, 'i': 'L', 'sub': 'a', '≦500 μm\u2003\u2003(3)'}, {'br': None, 'i': 'n', 'sub': 'b', '≧1.8\u2003\u2003(4)'}], 'wherein the following formulas (1) to (4) are satisfied.'}, 'wherein a cross section of said core is of a convex shape; and'}{'sub': 'G', 'claim-text': [{'sub': 'b', 'Lrepresents a length of said Bragg grating in said formula (2).'}, {'sub': 'a', 'Lrepresents a length of said active layer in said formula (3).'}, {'sub': 'b', 'nrepresents a refractive index of a material forming said Bragg grating in said formula (4).)'}], '(Δλ ...

BIDIRECTIONAL LONG CAVITY SEMICONDUCTOR LASER FOR IMPROVED POWER AND EFFICIENCY

The invention relates to bi-directional long-cavity semiconductor lasers for high power applications having two AR coated facets (2AR) to provide an un-folded cavity with enhanced output power. The lasers exhibit more uniform photon and carrier density distributions along the cavity than conventional uni-directional high-power lasers, enabling longer lasers with greater output power and lasing efficiency due to reduced longitudinal hole burning. Optical sources are further provided wherein radiation from both facets of several 2AR lasers that are disposed at vertically offset levels is combined into a single composite beam. 114-. (canceled)15. A semiconductor laser device comprising: a first facet and a second facet defining a laser cavity therebetween; and', 'comprising an active layer for generating laser light, wherein', 'a laser waveguide, extending between the first facet and the second facet,'}, 'the first facet and the second facet each include an anti-reflection coating that is configured for reflecting back into the laser cavity a first portion of the laser light and for outputting a second portion of the laser light, and', 'a buildup of a carrier density near the first facet and the second facet is reduced, thereby providing for greater gain uniformity along the laser cavity., 'a semiconductor laser chip comprising16. The semiconductor laser device of claim 15 , wherein at least 90% of the laser light travels the laser cavity one time before exiting through the first facet or the second facet.17. The semiconductor laser device of claim 15 , further comprising:a ridge that extends between the first facet and the second facet.18. The semiconductor laser device of claim 15 , wherein the laser waveguide has a width in a range of:3 to 5 microns, or80 to 200 microns.19. The semiconductor laser device of claim 15 , wherein the laser cavity is at least 5 mm long.20. The semiconductor laser device of claim 15 , further comprising:first beam collimating optics for ...

External cavity with a pair of two Fiber Bragg gratings at the front and back facet of a laser diode

A semiconductor laser chip is placed in between two Fiber Bragg gratings (FBGs), which are used as external cavities for the laser, to stabilize its center wavelength and to reduce its bandwidth. The first FBG is placed at the front facet of the laser chip, while the second FBG is placed on the back facet of the chip. The two FBGs are used to form an external cavity. Both FBGs can have same central wavelengths, different reflectivities and different bandwidths. The distance between the laser chip and the FBGs can varies from few millimeters to several meters. Since the FBGs have a very small wavelength drift with temperature fluctuations, the semiconductor laser has a stable center wavelength output. Another benefit of this setup is that the bandwidth of laser diode is also reduced.

Light-emitting element and method of manufacturing the same

A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21 a and a second surface 21 b that is opposed to the first surface 21 a , an active layer 23 that faces the second surface 21 b of the first compound semiconductor layer 21 , and a second compound semiconductor layer 22 including a first surface 22 a that faces the active layer 23 and a second surface 22 b that is opposed to the first surface 22 a are laminated; a first light reflection layer 41 that is provided on the first surface 21 a side of the first compound semiconductor layer 21 ; and a second light reflection layer 42 that is provided on the second surface 22 b side of the second compound semiconductor layer 22 . The first light reflection layer 41 includes a concave mirror portion 43 , and the second light reflection layer 42 has a flat shape.

Vertical external cavity surface emitting laser devices allowing high coherence, high power and large tunability

A laser device is provided for generating an optical wave at a laser frequency, including (i) a semiconductor element having a gain region with quantum wells, the gain region being located between a first mirror and an exit region defining an optical microcavity, (ii) a second mirror distinct from the semiconductor element and arranged so as to form with the first mirror an external optical cavity including the gain region, (iii) a pump for pumping the gain region so as to generate the optical wave, wherein the optical microcavity with the gain region and the external optical cavity are arranged so that a spectral ratio between the Half Width Half Maximum (HWHM) spectral bandwidth of the modal gain and a free spectral range of the external cavity in the range of 2 to 50.

Method and applications of thin-film membrane transfer

The disclosure relates to method and apparatus for micro-contact printing of micro-electromechanical systems (“MEMS”) in a solvent-free environment. The disclosed embodiments enable forming a composite membrane over a parylene layer and transferring the composite structure to a receiving structure to form one or more microcavities covered by the composite membrane. The parylene film may have a thickness in the range of about 100 nm-2 microns; 100 nm-1 micron, 200-300 nm, 300-500 nm, 500 nm to 1 micron and 1-30 microns. Next, one or more secondary layers are formed over the parylene to create a composite membrane. The composite membrane may have a thickness of about 100 nm to 700 nm to several microns. The composite membrane's deflection in response to external forces can be measured to provide a contact-less detector. Conversely, the composite membrane may be actuated using an external bias to cause deflection commensurate with the applied bias. Applications of the disclosed embodiments include tunable lasers, microphones, microspeakers, remotely-activated contact-less pressure sensors and the like.

SINGLE LONGITUDINAL MODE LASER DIODE SYSTEM

A semiconductor laser diode system may include a single longitudinal mode laser diode and a feedback system that monitors and controls the emission characteristics of the laser diode. The laser diode may include a gain medium and an optical feedback device. The feedback system may include a wavelength discriminator, an optical detector, a microprocessor, and a laser controller. Such a semiconductor laser diode system may be used to produce laser light having coherence length, wavelength precision, and wavelength stability that is equivalent to that of a gas laser. Accordingly, such a semiconductor laser diode system may be used in place of a traditional gas laser. 1. A semiconductor laser diode system , comprising:semiconductor laser diode comprising a gain medium and an optical feedback device; anda feedback system that monitors and controls emission characteristics of the laser diode to achieve and maintain single longitudinal mode operation of the laser diode,wherein the feedback system comprises a wavelength discriminator, an optical detector, a microprocessor, and a laser controller.2. The semiconductor laser diode system of claim 1 , wherein the optical feedback device feeds a narrowband portion of radiation emitted from the gain medium back into the gain medium to cause the laser diode to achieve single longitudinal mode operation.3. The semiconductor laser diode system of claim 2 , wherein the optical feedback device is a three-dimensional optical element having a Bragg grating recorded therein claim 2 , and wherein the Bragg grating causes the narrowband portion to be reflected back into the gain medium as seed light at a precisely known wavelength.4. The semiconductor laser diode system of claim 1 , wherein the wavelength discriminator includes a wavelength-selective optical element.5. The semiconductor laser diode system of claim 4 , wherein the wavelength discriminator includes a three-dimensional optical element having a wavelength-selective Bragg ...

Monolithic nano-cavity light source on lattice mismatched semiconductor substrate

An optoelectronic light emission device is provided that includes a gain region of at least one type III-V semiconductor layer that is present on a lattice mismatched semiconductor substrate. The gain region of the type III-V semiconductor layer has a nanoscale area using nano-cavities. The optoelectronic light emission device is free of defects

STRUCTURE AND METHOD FOR THE FABRICATION OF A GALLIUM NITRIDE VERTICAL CAVITY SURFACE EMITTING LASER

A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching. 1. A device , comprising:a non-polar or semi-polar III-nitride Vertical Cavity Surface Emitting Laser (VCSEL) fabricated on a non-polar or semi-polar substrate.2. The device of claim 1 , wherein light emitted from the VCSEL is polarization locked.3. The device of claim 1 , wherein the VCSEL is grown on a non-polar or semi-polar GaN substrate.4. The device of claim 1 , wherein the VCSEL is grown on a non-polar or semi-polar III-nitride substrate.5. The device of claim 1 , wherein the VCSEL is grown on a non-polar m-plane GaN or III-nitride substrate and light emitted by VCSEL is polarization-locked along an a-direction of the VCSEL.6. The device of claim 1 , wherein the VCSEL is grown on a semi-polar GaN or III-nitride substrate and light emitted by VCSEL is polarization-locked along an a-direction of the VCSEL.7. The device of claims 1 , wherein the non-polar VCSEL emits Ultraviolet (UV) light.8. The device of claims 1 , wherein the non-polar VCSEL emits blue light.9. The device of claim 1 , wherein the semi-polar VCSEL emits green light.10. The device of claim 1 , wherein the semi-polar VCSEL emits blue light.11. The device of claim 1 , wherein the VCSEL has a cavity length of less than 3 microns.12. The device of claim 1 , wherein the VCSEL comprises a cavity formed by etching of epitaxial layers during or after the substrate's partial or total removal.13. The device of claim 1 , wherein the VCSEL comprises a cavity length such that the VCSEL has single longitudinal mode operation.14. The device of claim 1 , wherein the VCSEL emits light with an output power of no less than 19.5 microwatts claim 1 , above threshold.15. The device of claim 1 , wherein the VCSEL emits light with a polarization ratio of no less than 0.72 claim 1 , above threshold.16. The device of claim 1 , wherein the VCSEL's light emission has a full width at half ...

Semiconductor laser, light source unit, and laser light irradiation device

A waveguide includes a narrow waveguide, wide waveguides, and tapered waveguides. A width Ww of the wide waveguides is wider than A width Wn of the narrow waveguide. The tapered waveguides have their width continuously varying so as to couple the narrow waveguide and the wide waveguides, respectively. Assuming a length of the waveguide as L and an area as S, Ks=S/(Wn·L) and 1<ks≤1.5 are satisfied.

ULTRA-LOW NOISE, HIGHLY STABLE SINGLE-MODE OPERATION, HIGH POWER, BRAGG GRATING BASED SEMICONDUCTOR LASER

A laser including: a gain chip; an external cavity incorporating a Bragg grating; and a baseplate; wherein a first end of the gain chip has a high reflectivity facet forming a first end of the laser cavity; a second end of the gain chip has a low reflectivity facet; and a second part of the external cavity comprises a Bragg grating, supported by the baseplate, the temperature of the baseplate being maintained through a feedback loop; wherein the optical length of the external cavity is at least an order of magnitude greater than the optical length of the gain chip; wherein the Bragg grating is physically long and occupies a majority of the length of the external cavity and is apodized to control the sidemodes of the grating reflection. 121-. (canceled)22. A laser comprising:a semiconductor gain chip to generate light; and wherein a first end of the gain chip has a high reflectivity facet forming a first end of a laser cavity; a second end of the gain chip has a low reflectivity facet, allowing light generated from the gain chip to be coupled to the first end of the waveguide external cavity,', 'wherein the physical length of the Bragg grating is greater than 20 mm and occupies at least 75% of the physical length of the waveguide external cavity., 'a waveguide external cavity having a first end and a second end and including an integrated Bragg grating to reflect at least a portion of the light'}23. The laser of claim 22 , wherein the Bragg grating is apodized to control the sidemodes of the grating reflection.24. The laser of claim 22 , wherein the physical length of the Bragg grating is greater than 40 mm and occupies at least 75% of the physical length of the external cavity.25. The laser of claim 22 , wherein the optical length of the external cavity is at least an order of magnitude greater than the optical length of the gain chip.26. The laser of claim 22 , wherein the optical length of the external cavity is at least about twenty times the optical length of ...

ULTRA-LOW NOISE, HIGHLY STABLE SINGLE-MODE OPERATION, HIGH POWER, BRAGG GRATING BASED SEMICONDUCTOR LASER

A laser including: a gain chip; an external cavity incorporating a Bragg grating; and a baseplate; wherein a first end of the gain chip has a high reflectivity facet forming a first end of the laser cavity; a second end of the gain chip has a low reflectivity facet; and a second part of the external cavity comprises a Bragg grating, supported by the baseplate, the temperature of the baseplate being maintained through a feedback loop; wherein the optical length of the external cavity is at least an order of magnitude greater than the optical length of the gain chip; wherein the Bragg grating is physically long and occupies a majority of the length of the external cavity and is apodized to control the sidemodes of the grating reflection. 121-. (canceled)22. A laser comprising:a semiconductor gain element to generate light;an external cavity with integrated Bragg grating monolithically integrated with the gain element;wherein a first end of the gain element has a high reflectivity forming a first end of a laser cavity; a second end of the gain element has a low reflectivity, allowing light generated from the gain element to be coupled with a first end of the external cavity, and the Bragg grating forming a second end of the laser cavity;wherein the physical length of the Bragg grating is greater than 20 mm and occupies at least 75% of the physical length of the external cavity.23. The laser of claim 22 , wherein the Bragg grating is apodized to control the sidemodes of the grating reflection.24. The laser of claim 22 , wherein the physical length of the Bragg grating is greater than 40 mm and occupies at least 75% of the physical length of the external cavity.25. The laser of claim 22 , wherein the optical length of the external cavity is at least an order of magnitude greater than the optical length of the gain element.26. The laser of claim 22 , wherein the external cavity comprises a low loss waveguide material.27. The laser of claim 22 , further comprising a ...

System and Method for Stabilizing Mode Locked Swept Laser for OCT Medical Imaging

An optical coherence analysis system uses a laser swept source that is constrained to operate in a stable mode locked condition by modulating a drive current to the semiconductor optical amplifier as function of wavelength or synchronously with the drive voltage of the laser's tunable element based on stability map for the laser. 1. An optical swept source control method , comprising:providing a laser swept source to generate a swept optical signal; andmodulating a drive signal for a gain element as the swept optical signal is swept through a scan band as a function of wavelength to control a mode locked operation.2. A method as claimed in claim 1 , wherein modulating the drive signal comprises modulating a bias current to a semiconductor optical amplifier.3. A method as claimed in claim 1 , wherein modulating the drive signal comprises modulating a bias current to a semiconductor optical amplifier synchronously with a tunable element drive signal.4. A method as claimed in claim 1 , wherein controlling the mode-locked operation of the laser swept source comprises modulating a gain of a laser cavity of the laser swept source in response to a wavelength of the laser swept source.5. A swept laser system comprising:a swept laser source for generating a swept optical signal that is frequency tuned over a tuning band; anda controller for modulating a drive signal for a gain element as the swept optical signal is swept through a scan band to control the mode locked operation.6. A system as claimed in claim 5 , wherein the swept laser source comprises:a gain medium for amplifying light within a laser cavity of the swept laser source to generate the swept optical signal; anda tuning element for controlling a frequency of the swept optical signal to sweep across a scanband, andwherein a gain of the gain medium and the drive voltage to the tuning element are controlled synchronously.7. A system as claimed in claim 5 , wherein the controller controls the mode-locked operation ...

Semiconductor laser, light source unit, communication system, and wavelength division multiplexing optical communication system

Provided is a distributed feed back semiconductor laser including a phase shift part capable of obtaining an excellent single-mode yield and a high luminous efficiency. A diffraction grating ( 105 ) is formed so as to extend in a guiding direction of a resonator between an end surface at which a low reflective film ( 111 ) is formed and an end surface at which a high reflective film ( 110 ) is formed. In diffraction grating ( 105 ) a plurality of phase shift parts ( 106 ) that discontinuously change a phase of the diffraction grating ( 105 ) in a predetermined range separated from the end surface at which the low reflective film ( 111 ) is formed are disposed.

Surface-emitting semiconductor laser

Certain examples described herein relate to a surface-emitting semiconductor-laser which includes an oxide window, a light emitting cavity, and at least one phase matching window. The oxide window, the light emitting cavity, and the at least one phase matching layer are arranged so that a predetermined phase relationship is satisfied. The phase relationship facilitates high performance and stable multimode operations of the surface-emitting semiconductor laser designed to emit between 850-1060 nm wavelength for applications such as long distance optical communications in high performance computing and data servers.

High-efficiency semiconductor laser

Embodiments of the present disclosure may relate to a hybrid silicon distributed feed-back (DFB) laser, wherein light is to propagate through the DFB laser along a length of the DFB laser. The DFB laser may include a mesa with a current channel that extends from the first side of the mesa to the second side of the mesa. At a first location along the length of the DFB laser, the current channel may have a first width and/or the mesa may have a second width. At a second location along the length of the DFB laser, the current channel may have a third width and/or the mesa may have a fourth width as measured in a direction perpendicular to the length of the DFB laser. Other embodiments may be described and/or claimed.

Laser Devices

An electrically-operated semiconductor laser device and method for forming the laser device are provided. The laser device includes a fin structure to which a waveguide is optically coupled. The waveguide is optically coupled to passive waveguides at either end thereof. The fin structure includes an array of fin elements, each fin element comprising Group III-V materials.

Method and Apparatus for Reducing Pointing-Error Noise

An apparatus having a variable angle light source characterized by a pivot point, a variable response optical receiver, and a first optical system is disclosed. The variable response optical receiver receives light generated by the light source on a receiving surface, the receiver generating a signal indicative of an intensity of light that impinges on a receiving surface. The first optical system images the pivot point to a fixed point relative to the receiver surface. In one aspect of the invention the first optical system is chosen such that light from the variable angle light source covers mores than half the receiving surface. The variable angle light source can include a gain chip in a semiconductor laser having a pivot point located substantially on a facet of the gain chip. 1. An apparatus comprising:a variable angle light source characterized by a pivot point;a variable response optical receiver having a receiving surface, said variable response optical receiver receiving light generated by said variable angle light source on said receiving surface, said receiver generating a signal indicative of an intensity of light that impinges on a receiving surface; anda first optical system that images said pivot point to a fixed point relative to said receiving surface.2. The apparatus of wherein said first optical system is chosen such that light from said variable angle light source covers more than half said receiving surface.3. The apparatus of wherein said first optical system is chosen such that light from said variable angle light source covers all of said receiving surface.4. The apparatus of wherein said first optical system generates a light spot that is larger than said receiving surface claim 1 , part of said light spot including said receiving surface.5. The apparatus of wherein said light spot has an area that is twice that of said receiving surface.6. The apparatus of wherein said fixed point is on said receiving surface.7. The apparatus of wherein ...

WAVELENGTH TUNABLE LASER DEVICE AND OPTICAL COHERENCE TOMOGRAPHY APPARATUS

A wavelength tunable laser device, including: a first reflector; a second reflector; an active layer formed between the first reflector and the second reflector; a quantum well structure layer that exhibits a quantum confined stark effect; and an electrode configured to apply a reverse bias voltage to the quantum well structure layer, wherein the active layer and the second reflector have a gap formed therebetween, the gap having a length to be changed to thereby sweep a resonance wavelength, and wherein the electrode is further configured to change application of the reverse bias voltage to be applied to the quantum well structure layer depending on the length of the gap when the resonance wavelength is swept. 1. A wavelength tunable laser device , comprising:a first reflector;a second reflector;an active layer formed between the first reflector and the second reflector;a quantum well structure layer that exhibits a quantum confined stark effect by a reverse bias voltage; andan electrode configured to apply the reverse bias voltage to the quantum well structure layer, 'the gap having a length to be changed to thereby sweep a resonance wavelength, and', 'wherein the active layer and the second reflector have a gap formed therebetween,'}wherein the electrode is further configured to change application of the reverse bias voltage to be applied to the quantum well structure layer depending on the length of the gap when the resonance wavelength is swept.2. The wavelength tunable laser device according to claim 1 , wherein a voltage to be applied to the quantum well structure layer when the length of the gap has a value equal to or larger than a predetermined value is higher than a voltage to be applied to the quantum well structure layer when the length of the gap has a value smaller than the predetermined value.3. The wavelength tunable laser device according to claim 1 , wherein a voltage to be applied to the quantum well structure layer to reduce the length of the ...

SEMICONDUCTOR LASER DEVICE, MANUFACTURING METHOD THEREOF, AND LIGHT EMITTING DEVICE

A semiconductor laser device includes an optical waveguide that extends toward a first end of the semiconductor laser device. The optical waveguide includes a first clad layer, an active layer, a second clad layer, and an electrode layer in this order. A reflecting surface, which has a dielectric film and a metal film in this order from the active layer, crosses the active layer at a second end of the optical waveguide. 1. A semiconductor laser device including a first clad layer , an active layer , a second clad layer , and an electrode layer in this order , the semiconductor laser device comprising:an optical waveguide that extends from inside of an end face of a second end of the semiconductor laser device toward an end face of a first end of the semiconductor laser device; anda reflecting surface which is arranged at an end on a second end side of the optical waveguide and which crosses the active layer,wherein the reflecting surface has a dielectric film and a metal film in this order from the active layer.2. The semiconductor laser device according to claim 1 , wherein the metal film extends from the reflecting surface to over a part of the second clad layer when the semiconductor laser device is seen in plan view.3. The semiconductor laser device according to claim 1 , whereinthe semiconductor laser device further includes a recessed portion inside the end face of the second end, andthe reflecting surface is a side face on a first end side in the recessed portion.4. The semiconductor laser device according to claim 3 , wherein when the semiconductor laser device is seen in plan view claim 3 , the metal film extends to a position between the reflecting surface in the second clad layer or the recessed portion and an outer edge of the semiconductor laser device.5. The semiconductor laser device according to claim 3 , wherein the recessed portion has a depth from the second clad layer to at least the first clad layer.6. The semiconductor laser device according to ...

WIDELY TUNABLE SHORT-CAVITY LASER

A tunable source includes a short-cavity laser optimized for performance and reliability in SSOCT imaging systems, spectroscopic detection systems, and other types of detection and sensing systems. The short cavity laser has a large free spectral range cavity, fast tuning response and single transverse, longitudinal and polarization mode operation, and includes embodiments for fast and wide tuning, and optimized spectral shaping. Disclosed are both electrical and optical pumping in a MEMS-VCSEL geometry with mirror and gain regions optimized for wide tuning, high output power, and a variety of preferred wavelength ranges; and a semiconductor optical amplifier, combined with the short-cavity laser to produce high-power, spectrally shaped operation. Several preferred imaging and detection systems make use of this tunable source for optimized operation are also disclosed. 2. The tunable laser of claim 1 , wherein said output power spectrum has a target spectral shape claim 1 , and said dynamically controlled pump energy is controlled to achieve said target spectral shape.3. The tunable laser of claim 1 , wherein said dynamically controlled pump energy turns off said tunable radiation over a portion of said wavelength tuning.4. The tunable laser of claim 1 , wherein said tunable laser is optically pumped and said pump energy is an optical pump.5. The tunable laser of claim 1 , wherein said tunable laser is electrically pumped and said pump energy is an electrical drive current.6. The tunable laser of claim 2 , wherein said spectral shape is substantially Gaussian.7. The tunable laser of claim 1 , further comprising an optical amplifier.8. The tunable laser of claim 7 , wherein said pump energy pumps said optical amplifier.9. The tunable laser of claim 1 , wherein said pump energy pumps said gain region between said first and second mirrors.11. The tunable laser of claim 10 , wherein said ASE spectrum is blue-shifted relative to said emission wavelength range.1217-. ( ...

Optical semiconductor element and laser device assembly

Provided is an optical semiconductor element including: a stacked structure body 20 formed of a first compound semiconductor layer 21, a third compound semiconductor layer (active layer) 23, and a second compound semiconductor layer 22. A fundamental mode waveguide region 40 with a waveguide width W 1 , a free propagation region 50 with a width larger than W 1 , and a light emitting region 60 having a tapered shape (flared shape) with a width increasing toward a light emitting end surface 25 are arranged in sequence.

Die bonding apparatus and die bonding method

A die bonding apparatus includes: a mounting base including a mounting area on which a first member is mounted; a heater arranged below the mounting base; a side wall configured to surround the mounting area; a collet configured to hold a second member by vacuum-chucking at an end portion; a lid including a hole, the lid being mounted on the side wall; a moving structure configured to move the collet to transport the second member held by the collet through the hole for bonding the second member to the first member; and a gas-supplying tube arranged on the side wall and configured to supply a heating gas to a heating space formed by the side wall and the lid. The lid contains a material capable of: reflecting an infrared radiation caused by the heater and the heating gas; or absorbing and re-radiating the infrared radiation.

Diode laser having reduced beam divergence

The present disclosure relates to a diode laser having reduced beam divergence. Some implementations reduce a beam divergence in the far field by means of a deliberate modulation of the real refractive index of the diode laser. An area of the diode laser (e.g., the injection zone), may be structured with different materials having different refractive indices. In some implementations, the modulation of the refractive index makes it possible to excite a supermode, the field of which has the same phase (in-phase mode) under the contacts. Light, which propagates under the areas of a lower refractive index, obtains a phase shift of π after passing through the index-guiding trenches. Consequently, the in-phase mode is supported and the formation of the out-of-phase mode is prevented. Consequently, the laser field can, in this way, be stabilized even at high powers such that only a central beam lobe remains in the far field.

WIDELY TUNABLE SHORT CAVITY LASER

A tunable source includes a short-cavity laser optimized for performance and reliability in SSOCT imaging systems, spectroscopic detection systems, and other types of detection and sensing systems. The short cavity laser has a large free spectral range cavity, fast tuning response and single transverse, longitudinal and polarization mode operation, and includes embodiments for fast and wide tuning, and optimized spectral shaping. Disclosed are both electrical and optical pumping in a MEMS-VCSEL geometry with mirror and gain regions optimized for wide tuning, high output power, and a variety of preferred wavelength ranges; and a semiconductor optical amplifier, combined with the short-cavity laser to produce high-power, spectrally shaped operation. Several preferred imaging and detection systems make use of this tunable source for optimized operation are also disclosed. 1. A high speed swept source comprising:a first tunable laser; anda second tunable laser;wherein each of said first and second tunable lasers is configured to emit tunable radiation over an emission wavelength range having a center wavelength, with an output power spectrum over said emission wavelength range and an average emission power; an optical cavity including a first and second mirror;', 'a gain region interposed between said first and second mirrors;', 'a tuning region; and means for adjusting an optical path length of said tuning region;', a free spectral range (FSR) of said optical cavity exceeds 5% of said center wavelength;', 'said tunable laser operates substantially in a single longitudinal and transverse mode over said emission wavelength range; and', 'said means has a wavelength tuning frequency response with a 6-dB bandwidth greater than about 1 kHz; and, 'wherein], 'wherein each of said first and second tunable lasers compriseswherein a first wavelength sweep of said first tunable laser and a second wavelength sweep of said second tunable laser are interleaved to produce an ...

Multi-wavelength surface plasmon laser and optoelectronic integrated circuit including the same

A multi-wavelength surface plasmon laser that simultaneously emits surface plasmons having a large number of wavelengths and includes an active layer whose thickness changes with position, and a metal cavity whose length changes with position so that light of different wavelengths is emitted according to position. Surface plasmons are generated at the interface between a metal layer and a semiconductor layer in response to the light of different wavelengths. The surface plasmons having different wavelengths may be resonated in the metal cavity whose length changes with position and may be emitted to the outside.

NANOLASER BASED ON DEPTH-SUBWAVELENGTH GRAPHENE-DIELECTRIC HYPERBOLIC DISPERSIVE CAVITY

The disclosure provides a nanolaser based on a depth-subwavelength graphene-dielectric hyperbolic dispersive cavity, comprising a pumping light source and the depth-subwavelength graphene-dielectric hyperbolic dispersive cavity; wherein the depth-subwavelength graphene-dielectric hyperbolic dispersive cavity is a spherical or hemispherical hyperbolic dispersive microcavity formed by alternately wrapping a dielectric core with graphene layers and dielectric layers. Because the graphene plasmon has unique excellent performances, such as an electrical adjustability, a low intrinsic loss, a high optical field localization, and a continuously adjustable resonance frequency from mid-infrared to terahertz, compared with a common metal-dielectric hyperbolic dispersive characteristic, a graphene-dielectric hyperbolic dispersive metamaterial used by the disclosure not only may highly localize an energy of an electromagnetic wave in a more depth-subwavelength cavity, but also may reduce an ohmic loss and improve a quality factor.

TUNABLE LASER EMISSION DEVICE

A wavelength tunable laser emission device () comprises: a first waveguide () comprising an optical amplification means for producing a stimulated light emission, the first waveguide extending in a longitudinal direction of the emission device, 11. A wavelength tunable laser emission device () , comprising:{'b': 31', '131, 'a first waveguide (, ) comprising an optical amplification means for producing a stimulated light emission, the first waveguide extending in a longitudinal direction of the emission device,'}{'b': 5', '105', '9', '109', '11', '12', '13', '14', '111', '112', '113', '114', '46', '47', '48, 'a second waveguide (, ) made of silicon on silicon dioxide and disposed parallel to the first waveguide spaced from the first waveguide in a vertical direction of the emission device so as to allow the existence of a hybrid optical mode coupled at one and the same time to the second waveguide and to the first waveguide, the second waveguide comprising a distributed reflector (, ) along the second waveguide beneath the first waveguide, the second waveguide comprising transverse zones (, , , ; , , , , , , ) doped differently so as to form a polar junction oriented in a transverse direction of the emission device,'}{'b': 35', '36', '135', '136, 'first electrodes (, ; , ) coupled to the first waveguide for injecting a pumping current into the optical amplification means, and'}{'b': 15', '16', '115', '116, 'second electrodes (, ; , ) coupled to the doped transverse zones of the second waveguide so as to modify an effective index of the second waveguide seen by the hybrid optical mode.'}2313233. The device as claimed in claim 1 , in which the first waveguide ( claim 1 , claim 1 , ) is made of an active material from group III-V.381088108. The device as claimed in claim 1 , in which a silicon dioxide layer ( claim 1 , ) of small thickness is disposed between the second waveguide and the first waveguide claim 1 , the silicon dioxide layer ( claim 1 , ) of small ...

METHOD FOR GENERATING A COMPRESSED OPTICAL PULSE

There is presented a method of for generating a compressed optical pulse () comprising emitting from a wavelength tunable microcavity laser system (), comprising an optical cavity () with a mechanically adjustable cavity length (L), a primary optical pulse () having a primary temporal width (T) while adjusting the optical cavity length (L) so that said primary optical pulse comprises temporally separated photons of different wavelengths, and transmitting said pulse through a dispersive medium (), so as to generate a compressed optical pulse () with a secondary temporal width (T), wherein the secondary temporal width (T) is smaller than the primary temporal width (T). 1. A method for generating a compressed optical pulse , the method comprising: an optical cavity with a mechanically adjustable cavity length, so as to enable the wavelength tunable microcavity laser system to emit photons of different wavelengths with respect to each other, wherein the optical cavity comprises a microcavity, wherein the length of the microcavity is at least ½ times the reference wavelength and less than 10 times the reference wavelength, wherein the optical cavity comprises a MEMS component, wherein a position of the MEMS component is adjustable and, wherein the cavity length of the optical cavity depends on the position of the MEMS component so that a cavity controller may control the cavity length of the optical cavity by controlling the position of the MEMS component,', 'a photon emitter for emitting photons into the optical cavity,', 'a cavity controller arranged for controlling the length of the optical cavity,, 'providing a wavelength tunable microcavity laser system having a reference wavelength corresponding to a central operating wavelength, comprisingproviding a dispersive medium,emitting a primary optical pulse having a primary temporal width from the wavelength tunable microcavity laser system,adjusting the optical cavity length so that said primary optical pulse comprises ...

LASER DEVICE

A Distributed Feedback Laser comprises a layer stack comprising a p-layer, an n-layer which are arranged so as to form an pn-junction having an active layer in between. Within the layer stack, an index coupled grating layer or a grating layer is arranged which comprises a first, a second, and a third grating portion. The first, the second, and the third grating portions are asymmetrically arranged along a lateral dimension of the layer stack, wherein the second grating portion is formed without a grating structure. 11010. A Distributed Feedback Laser device ( , ′) , comprising:{'b': 12', '12, 'a layer stack (, ′) having{'b': 12', '12', '12', '12', '12, 'i': p', 'p', 'n', 'n', 'a, 'a p-layer (, ′), n-layer (, ′), which are arranged so as to form a junction having an active layer (′) in between;'}{'b': 12', '12', '12', '3', '12', '3', '12', '12', '1', '12', '2', '12', '2', '12', '3', '12', '3', '12', '12, 'i': g', 'g', 'g', 'g', 'g', 'g', 'g', 'g, 'wherein, within the layer stack (, ′) an index coupled grating layer or a grating layer is arranged, which comprises a first grating portion, a second portion and a third grating portion (, ′), the first grating portion, the second portion and the third grating portions (, ′, , ′ , ′) are asymmetrically arranged along a lateral dimension of the layer stack (, ′);'}{'b': 12', '2', '12', '2', '12', '2', '12', '2, 'i': g', 'g', 'g', 'g, 'sub': lps', '2', '2, 'wherein the second portion (, ′) is formed without a grating structure; wherein the second portion (, ′) has a lateral extension defined by L=(2*n+1)*0.5*∧, corresponding to multiple λ/4 shifts, wherein ∧ is the grating period and n>=1.'}2101010101212121212121212ffbb. The Distributed Feedback Laser device ( claim 1 , ′) according to claim 1 , wherein the laser ( claim 1 , ′) device comprises at the front side ( claim 1 , ′) an AR-coating extending substantially perpendicular to the layers of the layer stack ( claim 1 , ′) and/or at the back side ( claim 1 , ′) an HR- ...

WIDELY TUNABLE SHORT CAVITY LASER

A tunable source includes a short-cavity laser optimized for performance and reliability in SSOCT imaging systems, spectroscopic detection systems, and other types of detection and sensing systems. The short cavity laser has a large free spectral range cavity, fast tuning response and single transverse, longitudinal and polarization mode operation, and includes embodiments for fast and wide tuning, and optimized spectral shaping. Disclosed are both electrical and optical pumping in a MEMS-VCSEL geometry with mirror and gain regions optimized for wide tuning, high output power, and a variety of preferred wavelength ranges; and a semiconductor optical amplifier, combined with the short-cavity laser to produce high-power, spectrally shaped operation. Several preferred imaging and detection systems make use of this tunable source for optimized operation are also disclosed. 1. A tunable laser operative to emit tunable radiation over an emission wavelength range having a center wavelength , with an output power spectrum over said wavelength range and an average emission power , said tunable laser comprising:an optical cavity including a first and second mirror;a gain region interposed between said first and second mirrors;a tuning region; andmeans for adjusting an optical path length of said tuning region;wherein:a free spectral range (FSR) of said optical cavity exceeds 5% of said center wavelength;said tunable laser operates substantially in a single longitudinal and transverse mode over said wavelength range; andsaid means for adjusting an optical path length has a wavelength tuning frequency response with a 6-dB bandwidth greater than about 1 kHz.2. The tunable laser of claim 1 , wherein said wavelength range is repetitively scanned by application of a repetitive drive waveform to said means for adjusting an optical path length claim 1 , said repetitive drive waveform having a fundamental frequency.3. (canceled)4. The tunable laser of claim 1 , further comprising an ...

SEMICONDUCTOR LASER ARRAY, SEMICONDUCTOR LASER ELEMENT, SEMICONDUCTOR LASER MODULE, AND WAVELENGTH-VARIABLE LASER ASSEMBLY

A semiconductor laser array includes: a plurality of semiconductor lasers configured to oscillate in a single mode at oscillation wavelengths different from one another, each semiconductor laser including an active layer including a multi-quatum well structure including a pluraltiy of will layers and a plurality of barrier layers laminated alternately, and an n-side separate confinement heterostructure layer and p-side separate confinement heterostructure layer configured to sandwich the active layer therebetween in a thickness direction, band gap energies of the n-side separate confinement heterostructure layer and the p-side separate confinement heterostructure layer being greater than band gap energies of the barrier layers of the active layer. The active layer is doped with an n-type impurity. 1. A semiconductor laser array comprising: an active layer including a multi-quantum well structure including a plurality of well layers and a plurality of barrier layers laminated alternately, and', 'an n-side separate confinement heterostructure layer and p-side separate confinement heterostructure layer configured to sandwich the active layer therebetween in a thickness direction, band gap energies of the n-side separate confinement heterostructure layer and the p-side separate confinement heterostructure layer being greater than band gap energies of the barrier layers of the active layer,, 'a plurality of semiconductor lasers configured to oscillate in a single mode at oscillation wavelengths different from one another, each semiconductor laser including'}wherein the active layer is doped with an n-type impurity.2. The semiconductor laser array according to claim 1 , wherein a doping concentration of the n-type impurity is 1×10cmto 3×10cm.3. The semiconductor laser array according to claim 1 , wherein the n-type impurity includes at least one of S claim 1 , Se and Si.4. The semiconductor laser array according to claim 1 , wherein the p-side separate confinement ...

Multi-wavelength semiconductor comb lasers

Examples disclosed herein relate to multi-wavelength semiconductor comb lasers. In some examples disclosed herein, a multi-wavelength semiconductor comb laser may include a waveguide included in an upper silicon layer of a silicon-on-insulator (SOI) substrate. The comb laser may include a quantum dot (QD) active gain region above the SOI substrate defining an active section in a laser cavity of the comb laser and a dispersion tuning section included in the laser cavity to tune total cavity dispersion of the comb laser.

Nitride semiconductor element

This invention aims at providing a nitride semiconductor causing no element breakdown even in driving under a high current density. A nitride semiconductor element is provided with a nitride semiconductor active layer made of Al x Ga (1-x) N and a composition change layer made above the nitride semiconductor active layer and made of Al x3 Ga (1-x3) N in which an Al composition ratio x3 decreases in a direction away from the nitride semiconductor active layer. The composition change layer has a first composition change region having a thickness larger than 0 nm and smaller than 400 nm and a second composition change region which is a region further away from the nitride semiconductor active layer than the first composition change region and in which the change rate of the Al composition ratio x3 in the thickness direction of the film thickness of the composition change layer is higher than that of the first composition change region, in which, in the first composition change region, the Al composition ratio continuously changes in the thickness direction of the film thickness.

SEMICONDUCTOR LASER DEVICE, CHIP ON SUBMOUNT, AND SEMICONDUCTOR LASER MODULE

A semiconductor laser device of an edge emission type, where a waveguide mode is multi-mode, is provided. The semiconductor laser device includes a first facet of the waveguide on an emission direction front side, the first facet having a first width in a horizontal direction perpendicular to a longitudinal direction of the waveguide; and a second facet of the waveguide on an emission direction rear side, the second facet having the first width, wherein a width of the waveguide, in the horizontal direction, is at least partially narrower than the first width, between the first facet and the second facet. 1. A semiconductor laser device of an edge emission type , where a waveguide mode is multi-mode , the semiconductor laser device comprising:a first facet of the waveguide on an emission direction front side, the first facet having a first width in a horizontal direction perpendicular to a longitudinal direction of the waveguide; anda second facet of the waveguide on an emission direction rear side, the second facet having the first width, whereina width of the waveguide, in the horizontal direction, is at least partially narrower than the first width, between the first facet and the second facet.2. The semiconductor laser device according to claim 1 , whereina ratio of length of a range having the first width, on the emission direction front side, relative to total length from the first facet on the emission direction front side to the second facet on the emission direction rear side is 20% or more and 56% or less.3. The semiconductor laser device according to claim 1 , wherein a narrowest width of the waveguide between the first facet on the emission direction front side and the second facet on the emission direction rear side is 30 μm or more and 75 μm or less.4. The semiconductor laser device according to claim 1 , further comprising a current injection region from which current is injected into the waveguide claim 1 , the current injection region having a width ...

Die bonding apparatus and die bonding method

A die bonding apparatus includes: a mounting base including a mounting area on which a first member is mounted; a heater arranged below the mounting base; a side wall configured to surround the mounting area; a collet configured to hold a second member by vacuum-chucking at an end portion; a lid including a hole, the lid being mounted on the side wall; a moving structure configured to move the collet to transport the second member held by the collet through the hole for bonding the second member to the first member; and a gas-supplying tube arranged on the side wall and configured to supply a heating gas to a heating space formed by the side wall and the lid. The lid contains a material capable of: reflecting an infrared radiation caused by the heater and the heating gas; or absorbing and re-radiating the infrared radiation.

QUANTUM CASCADE LASER, LIGHT EMITTING DEVICE, METHOD FOR FABRICATING A SEMICONDUCTOR LASER

A quantum cascade laser includes: a laser structure having a first region, a second region, and a third region, the first region having an end face; a high-specific resistance region disposed on a principal surfaces of the first and second regions; a metal layer disposed on a principal surface of the third region; a dielectric film disposed on the end face and the high-specific resistance region; and a reflective metal film disposed on the dielectric film, the end face and the high-specific resistance region. The first to third regions are arranged in a direction of a first axis. The laser structure has a semiconductor mesa and a semiconductor base. The semiconductor base mounts the semiconductor mesa. The dielectric film has a difference in level at a boundary between the first and second regions, and the terrace extends in a direction of a second axis intersecting that of the first axis. 1. A quantum cascade laser comprising:a laser structure including a first region, a second region, and a third region, the first region having an end face;a high-specific resistance region disposed on a principal surface of the first region and a principal surface of the second region;a metal layer disposed on a principal surface of the third region;a dielectric film disposed on the end face and the high-specific resistance region; anda reflective metal film disposed on the dielectric film, the end face and the high-specific resistance region,the first region, the second region, and the third region being arranged in order in a direction of a first axis,the laser structure including a semiconductor mesa and a semiconductor base, the semiconductor mesa having a core layer, and the semiconductor base mounting the semiconductor mesa, andthe dielectric film having a terrace with a difference in level at a boundary between the first region and the second region, the terrace extending in a direction of a second axis intersecting that of the first axis.2. The quantum cascade laser ...

Ultra-low noise, highly stable single-mode operation, high power, bragg grating based semiconductor laser

A low noise, single mode laser includes a semiconductor gain element generating light and having a highly reflective first end forming a first end of a laser cavity. The gain element may be monolithically or discretely integrated with, or distinct from, and coupled to a waveguide comprised of a low loss material with a refractive index ‘n’ greater than 3. The waveguide includes a Bragg grating forming the second end of the laser cavity. A cavity phase control section may be provided between the gain element and the Bragg grating. Two photodetector monitors provide a feedback signal for locking the light from the gain element to a specific wavelength on the Bragg grating reflection spectrum by varying at least one of the cavity phase control section and the gain element bias current. The Bragg grating may have a physical length larger than 10 mm and that occupies at least 50% of the optical length of the external cavity.

Semiconductor laser capable of polarization modulation of bent channel stripe

SEMICONDUCTOR LASER ELEMENT, SEMICONDUCTOR LASER ARRAY AND PROCESSING APPARATUS

Provided is a semiconductor laser element including: a resonator structure; and a first reflection film and a second reflection film provided on a non-emission end surface of the resonator structure and an emission end surface of the resonator structure, respectively. Reflectance R of the second reflection film at a gain wavelength satisfies the following relational expression: R1≤R≤R(Oc)×C where R1 is reflectance of the second reflection film when the resonator structure performs laser oscillation with power 1.4 times a minimum value of threshold power which is minimum power for the resonator structure to perform the laser oscillation, R(Oc) is reflectance of the external resonance mirror, and C is a ratio of light, which is reflected by the external resonance mirror and is incident in the resonator structure, to light which is reflected by the external resonance mirror. 1. A semiconductor laser element disposed in a wavelength beam combining type processing apparatus including an external resonance mirror , the semiconductor laser element comprising:a resonator structure including a light-emitting layer that emits laser light; anda first reflection film and a second reflection film that are provided on a non-emission end surface of the resonator structure and an emission end surface of the resonator structure, respectively, and reflect the laser light, wherein {'br': None, 'i': R', 'R≤R', 'Oc', 'C, '1≤()×'}, 'reflectance R of the second reflection film at a gain wavelength of the semiconductor laser element satisfies the following relational expressionwhere R1 is reflectance of the second reflection film when the resonator structure performs laser oscillation with power 1.4 times a minimum value of threshold power, R(Oc) is reflectance of the external resonance mirror, and C is coupling efficiency, the threshold power being minimum power for the resonator structure to perform the laser oscillation, the coupling efficiency being a ratio of light, which is reflected ...

Semiconductor laser device for use in a semiconductor laser module and an optical amplifier

A single semiconductor laser device used in a semiconductor laser module of an optical amplifier and having a first light emitting stripe with a diffraction grating and at least one other light emitting stripe with a diffraction grating and which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface.

Semiconductor laser and manufacturing method thereof

Method for generating luminescence from a buried layer in a multilayer compound semiconductor material using a liquid contact

A method is disclosed for generating light in one or more buried layers of a multilayer compound semiconductor material by contacting the material with a tansparent, electrically conducting fluid and passing current between the fluid and the semiconductor material. The measured characteristics of the light emitted from a first semiconductor material may be compared with those measured from a second semiconductor material of known properties, and the properties of the first semiconductor material calculated. Uniformity maps of the compound semiconductor material may be prepared using the patterns of various light emission characteristics measured across the surface of the material.

Semiconductor laser, semiconductor optical amplifier, and optical communication device

Injection laser

FIELD: optoelectronic engineering; compact high-power semiconductor lasers. SUBSTANCE: proposed laser has lasing heterostructure incorporating active layer, waveguide and boundary layers, butt-end faces, longitudinal intensifying axis, and optical resonator. Series of alternating radiation-intensifying region and radiation output regions is formed in heterostructure. Radiation admission semiconductor layer is made in output layer. Composition and thickness of heterostructure boundary layer in output region are chosen to enable partial restriction of radiation in heterostructure. Each output region is bounded by output faces. Provision is made for reducing laser radiation density at output faces with controlled directivity and convergence. EFFECT: enhanced radiation power, operating reliability, and efficiency, facilitated manufacture of laser. 15 cl, 11 dwg ÐÎÑÑÈÉÑÊÀß ÔÅÄÅÐÀÖÈß RU (19) (11) 2 300 835 (13) C2 (51) ÌÏÊ H01S 5/00 (2006.01) ÔÅÄÅÐÀËÜÍÀß ÑËÓÆÁÀ ÏÎ ÈÍÒÅËËÅÊÒÓÀËÜÍÎÉ ÑÎÁÑÒÂÅÍÍÎÑÒÈ, ÏÀÒÅÍÒÀÌ È ÒÎÂÀÐÍÛÌ ÇÍÀÊÀÌ (12) ÎÏÈÑÀÍÈÅ ÈÇÎÁÐÅÒÅÍÈß Ê ÏÀÒÅÍÒÓ (21), (22) Çà âêà: 2005124940/28, 05.08.2005 (72) Àâòîð(û): Øâåéêèí Âàñèëèé Èâàíîâè÷ (RU) (24) Äàòà íà÷àëà îòñ÷åòà ñðîêà äåéñòâè ïàòåíòà: 05.08.2005 (73) Ïàòåíòîîáëàäàòåëü(è): Øâåéêèí Âàñèëèé Èâàíîâè÷ (RU) (45) Îïóáëèêîâàíî: 10.06.2007 Áþë. ¹ 16 R U (56) Ñïèñîê äîêóìåíòîâ, öèòèðîâàííûõ â îò÷åòå î ïîèñêå: RU 2109382 C1, 20.04.1998. US 6748002 B2, 08.06.2004. JP 59031084, 18.02.1984. RU 2110874 Ñ1, 10.05.1998. 2 3 0 0 8 3 5 èçëó÷åíè , ïîâûøåíèå íàäåæíîñòè ðàáîòû ëàçåðà, ñíèæåíèå îïòè÷åñêèõ ïîòåðü èçëó÷åíè , óâåëè÷åíèå ýôôåêòèâíîñòè, ñíèæåíèå íà âûõîäíûõ ãðàí õ ïëîòíîñòè ëàçåðíîãî èçëó÷åíè ñ êîíòðîëèðóåìîé íàïðàâëåííîñòüþ è ðàñõîäèìîñòüþ, óïðîùåíèå òåõíîëîãè÷åñêîãî ïðîöåññà èçãîòîâëåíè ëàçåðà. 14 ç.ï. ô-ëû, 11 èë. R U (57) Ðåôåðàò: Èçîáðåòåíèå îòíîñèòñ ê îïòîýëåêòðîííîé òåõíèêå, ê ìîùíûì è êîìïàêòíûì ïîëóïðîâîäíèêîâûì ëàçåðàì. Ëàçåð âêëþ÷àåò ëàçåðíóþ ãåòåðîñòðóêòóðó. Ãåòåðîñòðóêòóðà ñîäåðæèò àêòèâíûé ñëîé, âîëíîâîäíûå è ...

Optical amplifier with larger dynamic range

一种光放大器，具有正面、背面和光学空腔，所述空腔具有限定在所述正面与所述背面之间的长度，所述空腔包括：与所述正面相邻的第一区段，所述第一区段具有在损失、零偏置和增益之间可控的偏置；以及与所述背面相邻的第二区段，其中，所述第二区段具有在零偏置与增益之间可控的偏置；其中，所述第一区段的长度短于所述第二区段的长度。

Semiconductor laser component, its manufacturing method and light emitting device

本发明实现一种能够充分抑制源自制造过程的污染的、具有较高的可靠性的半导体激光器元件。半导体激光器元件(303)具有朝向其第一端延伸的光波导，光波导依次具有第一包覆层(2)、活性层(3)、第二包覆层(4)以及电极层(10)。在光波导的第二端从活性层(3)的一侧依次具有电介质膜(8)以及金属膜(9)的反射面横穿活性层(3)。

Buried ridge waveguide laser diode

온도특성을 향상시키고, 누설전류로 인한 광손실을 줄일 수 있는 매립형 봉우리 도파로 레이저 다이오드를 제공한다. 그 다이오드는 클래드층 상의 일부에 동일한 폭으로 수직하게 연장되며, 선택적 식각층과 제1 도전형의 제1 화합물층으로 이루어진 봉우리 영역을 포함한다. 봉우리 영역의 바깥 쪽의 클래드층 상에 봉우리 영역의 깊이와 동일한 두께를 가지고, 제1 도전형과 반대되는 제2 도전형의 제2 화합물층을 포함하는 p-n-p 전류차단층을 포함한다. 이때, 전류차단층은 상기 제2 화합물 상으로 확장된 제1 화합물층을 포함한다. To provide a buried peak waveguide laser diode that can improve the temperature characteristics and reduce the optical loss due to leakage current. The diode extends perpendicularly to the same width on a portion of the clad layer and includes a peak region consisting of an optional etch layer and a first compound layer of a first conductivity type. And a p-n-p current blocking layer on the clad layer outside of the peak region and having a thickness equal to the depth of the peak region and including a second compound layer of a second conductivity type opposite to the first conductivity type. In this case, the current blocking layer includes a first compound layer extended onto the second compound. 레이저 다이오드, 매립형, 봉우리, p-n-p 전류차단층 Laser diode, buried, peak, p-n-p current blocking layer

Semiconductor laser device

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

External cavity semi-conductor laser and method for fabrication thereof

The present invention concerns a design for an external cavity single mode laser wherein a short optical path length for the optical cavity (e.g., ˜3 to 25 mm) provides sufficient spacing of the longitudinal modes allowing a single wavelength selective element, such as a microfabricated etalon, to provide a single mode of operation, and optionally a selectable mode of operation.

Integrated short cavity laser

Multi-wavelength semiconductor comb lasers

Examples disclosed herein relate to multi-wavelength semiconductor comb lasers. In some examples disclosed herein, a multi-wavelength semiconductor comb laser may include a waveguide included in an upper silicon layer of a silicon-on-insulator (SOI) substrate. The comb laser may include a quantum dot (QD) active gain region above the SOI substrate defining an active section in a laser cavity of the comb laser and a dispersion tuning section included in the laser cavity to tune total cavity dispersion of the comb laser.

Semiconductor laser resonator formed on single sheet

一种用于制造例如光存储所需要的具有好的光学波阵面特性的激光器的方法和结构，包括提供一种激光器，其中从激光器前腔面形成的输出光束不被半导体薄片的边缘所阻挡，来防止有害的光束畸变。半导体激光器结构外延生长在基底上，且至少具有下熔覆层、激活层、上熔覆层和接触层。穿过由光刻确定的掩模的干法刻蚀制造具有长度为l c 、宽度为b m 的激光器台面。另一种光刻和刻蚀用于形成台面顶部宽度为w的脊形结构。刻蚀步骤也在激光器波导结构的末端形成镜面或腔面。薄片的长度l s 和宽度b s 可以被选择为等于或长于波导长度l c 和台面宽度b m 的方便的数值。波导长度和宽度被选择，以使对于给定的缺陷密度D，产率大于50％。

INFRARED LIGHT SOURCE COMPRISING A SEMICONDUCTOR LASER ASSOCIATED WITH MEANS OF MODE SELECTION AND POWER SUPPLY

Method for manufacturing semiconductor laser element, and semiconductor laser device

一种具有多个波导(21)的半导体激光元件(1)的制造方法，包括：第1分割工序，将形成有氮化物类半导体激光层叠构造(20)的基板(10)沿着第1方向分割而制作分割基板(3)；解理工序，将分割基板(3)沿着与第1方向正交的第2方向解理而制作半导体激光元件(5)；以及第2分割工序，将半导体激光元件(5)沿着第1方向分割而至少将该半导体激光元件(5)的较长方向的一个端部除去；解理工序包括在分割基板(3)上形成在第2方向上延伸的解理导入槽(4)的第1解理工序、以及沿着解理导入槽(4)的较长方向将分割基板(3)解理的第2解理工序；在第2分割工序中，将半导体激光元件(5)的包括解理导入槽(4)的部分除去。

Laser diode element with excellent intermodulation distortion characteristics

Broadband light source using semiconductor optical amplifier

본 발명은 반도체 광증폭기를 이용한 광대역 광원에 관한 것으로, 이득영역인 활성층과, 언더 클래드 및 오버 클래드와, 상기 활성층 양단에 형성된 무반사층을 구비하여 입력 광신호를 증폭하는 반도체 광증폭기와; 상기 반도체 광증폭기의 외부에 배치되어, 상기 반도체 광증폭기로부터의 출사광을 반사하는 반사기와; 상기 반도체 광증폭기로부터의 출사광을 상기 반사기로 유도하고, 상기 반사기에 의한 반사광을 상기 반도체 광증폭기의 활성층으로 유도하는 광도파로와; 상기 광도파로 중에 배치되어 상기 반도체 광증폭기의 편광의존성을 조절하는 편광조절기를 포함함을 특징으로 한다. The present invention relates to a broadband light source using a semiconductor optical amplifier, comprising: a semiconductor optical amplifier configured to amplify an input optical signal having an active layer serving as a gain region, an under cladding and an over clad, and an antireflection layer formed at both ends of the active layer; A reflector disposed outside the semiconductor optical amplifier and reflecting the light emitted from the semiconductor optical amplifier; An optical waveguide for guiding the light emitted from the semiconductor optical amplifier to the reflector and for guiding the reflected light from the reflector to the active layer of the semiconductor optical amplifier; It is characterized in that it comprises a polarization controller disposed in the optical waveguide for controlling the polarization dependence of the semiconductor optical amplifier. 광대역 광원, 자연방출광, 이득물결, 가간섭성 Broadband light source, natural emission light, gain wave, coherence

Method for the generation of Ultra-short optical pulses

Ultra-short transform-limited optical pulses, to be utilized for high bit-rate transmission systems, are obtained through direct modulation of a semiconductor laser (1) by means of pulses of such a duration as to excite only the first peak of the relaxation oscillations of the cavity of laser (1), thermally tuned to such a length that the pulse portions that overlap inside the cavity interfere constructively. The pulses emitted by the laser (1) are then made to pass in a fibre with high negative dispersion (8) to compensate for the phase effect due to the chirp.

Mems-tunable short cavity laser

Dfb+r laser structure for directly modulated laser

A controller stabilizes a distributed feedback plus reflection (DFB+R) laser, which has a back facet, a DFB section, a passive section, and a front facet with a low reflective element. An etalon filter is formed by a portion of the DFB section, the passive section, and the low reflective element. Control circuitry directly modulates the DFB section with a modulation signal and biases the passive section with a bias signal. In operation, a lasing mode of the DFB section is aligned to a long wavelength edge of one of the periodic peaks of a reflection profile of the etalon filter. Meanwhile, photodiodes are arranged to monitor the output power emitted from the laser's front and back facets. The control circuitry monitors a ratio of the detected output power and adjusts the bias based on the monitored ratio.

External resonator type light emitting device

不使用珀耳帖元件就能够抑制跳模，提高波长稳定性，抑制光强度变动。外部谐振器型发光装置具备单独使半导体激光振荡的光源、以及与该光源构成外部谐振器的进行单模振荡的光栅元件。光源具备使半导体激光振荡的活性层。光栅元件具备：光波导，其具有射入半导体激光的入射面和射出所需波长的出射光的出射面；布拉格光栅，其形成在光波导内；以及传播部，其设置在入射面和布拉格光栅之间。该外部谐振器型发光装置满足式(1)～式(5)的关系。

Laser devices having a gallium and nitrogen containing semipolar surface orientation

Laser devices formed on a semipolar surface region of a gallium and nitrogen containing material are disclosed. The laser devices have a laser stripe configured to emit a laser beam having a cross-polarized emission state.

Buried ridge waveguide laser diode

Provided is a buried ridge waveguide laser diode that has improved temperature characteristics and can reduce optical loss by a leakage current. The buried ridge waveguide laser diode includes: a ridge region that extends vertically with a constant width and is composed of a selective etching layer and a first compound layer formed of a first conductive type material on a portion of the clad layer; and a p-n-p current blocking layer that has a thickness identical to the depth of the ridge region on the clad layer outside the ridge region and includes a second compound layer formed of a second conductive type material opposite to the first conductive type material. At this time, the current blocking layer includes the first compound layer extending on the second compound layer.

Tunable spectroscopic source with power stability and method of operation

A laser system for a spectroscopic catheter system utilizes an overmoded cavity ir order to reduce mode hoping induced power fluctuations during wavelength scanning. In the preferred embodiment, a semiconductor gain medium is used to reduce cost. A fiber pigtail is used to define the laser cavity, which has a tight cavity mode spacing of less tha 15 Gigahertz. A diffraction grating is used as the tuning element. A cylindrical lens is used to reduce alignment tolerances and thereby increase manufacturability.

Semiconductor laser device

The semiconductor laser device the n-InP cladding layer, SCH-MQW active layer, p-InP cladding layer, and p-GaInAsP optical waveguide layer are respectively formed into a tapered shape on the n-InP substrate . The combination of oscillation parameters of the tapered shape, the grating pitch of a diffraction grating, an optical waveguide including an active layer, and the length of a resonator are adjusted so that laser beam including two or more oscillating longitudinal modes are output.

Semiconductor laser element with excellent high-temperature characteristic and capable of being readily mounted on an optical circuit board

In a semiconductor laser element which has a semiconductor block including a first end surface, a second end surface opposite to the first end surface, and a principal surface contiguous to the first and the second end surfaces, the internal end surface is defined by forming a groove from the principal surface, creating an internal end surface opposite to the second end surface and nearer to the second end surface than the first end surface is. The internal end surface serves as a front laser beam emitting surface while the second end surface serves as a rear laser beam emitting surface. Thus, an optical resonator is provided between the internal and the second end surfaces. The internal end surface is spaced apart from the second end surface by a length of 150 μm, which is different from a length of the semiconductor block.

Surface emitting laser and optical coherence tomography apparatus

本公开涉及表面发射激光器和光学干涉层析成像装置。为了提供能够改善波长调谐效率的波长可调表面发射激光器，提供了一种表面发射激光器，包括：第一反射镜；包括活性层的半导体空腔；和第二反射镜，第一反射镜、半导体空腔和第二反射镜被以所述的顺序形成，在第一反射镜和半导体空腔之间形成的间隙部分，空腔长度是可调的，其中该表面发射激光器具有在所述间隙部分和所述半导体空腔之间形成的高反射率结构，并且满足表达式(λ/2)×m+λ/8<L<(λ/2)×m+3λ/8，其中L是半导体空腔的光学厚度，m是1或者更大的整数，并且λ是激光振荡的中心波长。

Widely tunable amplification short cavity laser

本发明公开了一种放大的可调谐源，包括耦合到用于高功率，频谱成形操作的光学放大器的短腔激光器。所述短腔激光器被耦合到具有2个用于扩宽增益的量子态的量子阱半导体光学放大器。所述放大的可调谐源的2个优选波长范围包括1200‑1400nm和800‑1100nm。还公开了耦合到光纤放大器的短腔可调谐激光器。呈现了多种与所述放大的可调谐源的结合的可调谐滤光片，以降低噪声或改善光谱纯度。

Amplified widely tunable short cavity laser

An amplified tunable source includes a short-cavity laser coupled to an optical amplifier for high power, spectrally shaped operation. The short-cavity laser is coupled to a quantum well semiconductor optical amplifier with two quantum states for broadened gain. Two preferred wavelength ranges of the amplified tunable source include 1200-1400nm and 800-1100nm. Also disclosed is the short cavity tunable laser coupled to a fiber amplifier. Various combinations of tunable optical filters with the amplified tunable source to reduce noise or improve spectral purity are presented.

Intracavity upconversion laser

The present invention relates to an upconversion laser system comprising at least a semiconductor laser having a gain structure ( 4 ) arranged between a first mirror ( 5 ) and a second mirror ( 6 ), said first ( 5 ) and said second mirror ( 6 ) forming a laser cavity ( 7 ) of the semiconductor laser, and an upconversion laser for upconverting a fundamental radiation of said semiconductor laser. The upconversion laser system of the present invention is characterized in that the upconversion laser is arranged in the laser cavity ( 7 ) of the semiconductor laser. The proposed upconversion laser system has a compact design.

Laser diode giving passive mode locking and method of making optical pulse using the same diode

포화흡수체와 같은 비선형 영역이 없는 다영역 레이저 다이오드에서 수동 모드 잠김을 이용한 광 펄스 생성 방법을 제공한다. 그 레이저 다이오드는 리플렉터(reflector) 역할을 하는 DFB(distributed feedback) 영역; 및 상기 DFB 영역에 연결되고 끝단에 절단면(as-cleaved facet)이 형성된 이득 영역(gain region)을 포함한다. 본 발명에 의한 레이저 다이오드는 DFB 영역에 문턱 전류 이하의 전류를 인가하여 리플렉터로 작동시킬 경우 수동 모드 잠김이 원활히 발생하여, 포화 흡수체와 같은 영역이 불필요하여 제작이 간편하고, 포화 흡수체를 사용하는 경우에 비해 주파수의 가변 영역을 확대할 수 있다. An optical pulse generation method using passive mode locking in a multi-domain laser diode without a nonlinear region such as a saturable absorber is provided. The laser diode includes a distributed feedback region (DFB) that acts as a reflector; And a gain region connected to the DFB region and having an as-cleaved facet formed at an end thereof. When the laser diode according to the present invention applies a current below the threshold current to the DFB region and operates as a reflector, the manual mode locking occurs smoothly, so that a region such as a saturated absorber is not necessary and is easy to manufacture, and a saturated absorber is used. Compared to this, the variable range of frequency can be enlarged.

Fabry-perot laser with wavelength control

A laser device (50), in particular a semiconductor laser, emitting optical radiation with a defined mode pattern can be produced from a standard Fabry-Perot (FP) laser by post-processing at the wafer level, i.e. before the waferis separated into individual dies by cleaving /dicing. A sub-cavity is formed within the FP laser cavity (50). The sub-cavity has a predetermined length and is located between the FP facets (12,14). An aperiodic grating composed of a small number of contrast elements (52), typically less than 10, with predetermined inter-element separations and predetermined spacings relative to the sub-cavity is formed on or in the optical waveguide (16). The inter-element separations and the spacings relative to the sub-cavity produce a filtering function of thye aperiodic grating for optical radiation propagating in the waveguide (16). The laser device (50) is suitable for telecommunicatons applications due to its highside -mode-suppression ratio and narrow-linewitdh.

Distributed feedback semiconductor laser

A distributed feedback semiconductor laser (DFB laser) in which light feedback is performed by using a diffraction grating, and in which influence of external feedback noises can be decreased to suppress fluctuation of an optical output. The DFB laser comprises a diffraction grating structure portion which constitutes a resonator and which is divided into a plurality of regions along the longitudinal direction of the resonator, and one or more phase shift portions each disposed between adjacent regions of the diffraction grating structure portion, wherein total phase shift obtained by all of the phase shift portions has a quantity corresponding to λ/n, where λ is an oscillation wavelength, and n is an integer larger than 4 (n>4) and less than or equal to 16 (n≦16). The total phase shift may have a quantity corresponding to a value within a range between λ/5 and λ/8.

Method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure

This invention relates to a method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure, comprising: step 1: forming a selective growth pattern of a modulator section on a substrate; step 2: simultaneously growing a 2-stacked-layer active region structure of a modulator MQW layer and a laser MQW layer by the first epitaxy step; step 3: etching gratings, and removing the laser MQW layer in the modulator section by selective etching; and step 4: completing the growth of the entire electro-absorption modulated laser structure by a second epitaxy step.