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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 2414. Отображено 100.
05-04-2012 дата публикации

Method of piezoelectric vibrating piece, wafer, piezoelectric vibrator, oscillator, electronic apparatus, and radio-controlled timepiece

Номер: US20120079690A1
Автор: Daishi Arimatsu
Принадлежит: Seiko Instruments Inc

The present invention provides a novel method of producing piezoelectric vibration pieces in which a plurality of piezoelectric vibration pieces are formed at once from a wafer, using a plurality of photoresist processes. The wafer is marked with wafer marks each unique to a different one of photoresist masks to prevent a wrong use of the photoresist masks during the photoresist processes.

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Номер записи: 1
07-06-2012 дата публикации

Surface acoustic wave resonator, surface acoustic wave oscillator, and electronic apparatus

Номер: US20120139653A1
Автор: Keigo Iizawa, Kenichi Hano, Kunihito Yamanaka, Takuya Owaki
Принадлежит: Seiko Epson Corp

A surface acoustic wave resonator which can realize favorable frequency-temperature characteristics and suppress frequency variations is provided. The surface acoustic wave resonator includes a quartz crystal substrate with Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, and 42.79°≦|Ψ|≦49.57°), and an IDT that is provided on the quartz crystal substrate, includes a plurality of electrode fingers, and excites a stop band upper end mode surface acoustic wave, wherein inter-electrode finger grooves are provided between the electrode fingers in a plan view, and wherein if a line occupation rate of convex portions of the quartz crystal substrate disposed between the inter-electrode finger grooves is ηg, and a line occupation rate of the electrode fingers disposed on the convex portions is ηe, η g >η e and 0.59<η eff <0.73 are satisfied in a case where an effective line occupation rate ηeff of the IDT is an arithmetic mean of the line occupation rate ηg and the line occupation rate ηe.

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Номер записи: 2
21-06-2012 дата публикации

Crystal oscillator and method for manufacturing the same

Номер: US20120154068A1
Автор: Chao-Ta Huang, Lung-Tai Chen, Tzung-Ching Lee, Yu-Wen Hsu
Принадлежит: Industrial Technology Research Institute ITRI

A crystal oscillator includes a cover, a crystal blank and an Integrated Circuit (IC) chip. The cover has a surface, a cavity formed in the surface, a plurality of conductive contacts and a conductive sealing ring. The conductive contacts are disposed on the surface, and the conductive sealing ring is disposed on the surface and surrounds the conductive contacts. The IC chip is connected to the conductive contacts and the conductive sealing ring, and forms a hermetic chamber with the cover and the conductive sealing ring. The crystal blank is located in the hermetic chamber, and is electrically connected to the IC chip. Furthermore, a method for manufacturing a crystal oscillator is also provided.

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Номер записи: 3
18-10-2012 дата публикации

Resonator device

Номер: US20120262253A1
Автор: Bruce A. Igawa, Bryce Smith, Paul G. Rosadiuk, Walid M. Al-Bondak
Принадлежит: Boeing Co

A coaxial resonator device includes a substrate including a chip-and-wire circuit. A resonator is coupled to the substrate using a conductive epoxy. A system includes a resonator device. The resonator device includes a housing having one or more connectors, a resonator coupled to the housing a conductive epoxy, and a chip-and-wire circuit connecting the resonator to the one or more connectors.

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Номер записи: 4
15-11-2012 дата публикации

Communications filter package for narrowband and wideband signal waveforms

Номер: US20120286894A1
Автор: Michael S. Vogas
Принадлежит: BAE Systems Information and Electronic Systems Integration Inc

A filter package for communications equipment includes two or more filters in die form, each having a different frequency response. A first switch and a second switch are operatively connected to the filters and are configured to select a desired filter for operation in a signal stage of the equipment. The filters are aligned and stacked one over the other in the form of a package having an input terminal that is tied to a common terminal of the first switch, and an output terminal tied to a common terminal of the second switch. When the input and the output terminals of the filter package are connected to corresponding terminals of an intermediate frequency (IF) stage in a communications transceiver, the package can support both narrowband and wideband waveforms defined by the Joint Tactical Radio System (JTRS).

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Номер записи: 5
24-01-2013 дата публикации

Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module unit

Номер: US20130021110A1
Автор: Kunihito Yamanaka
Принадлежит: Seiko Epson Corp

It is possible to reduce the size of a surface acoustic wave resonator by enhancing the Q value. In a surface acoustic wave resonator in which an IDT having electrode fingers for exciting surface acoustic waves is formed on a crystal substrate, a line occupying ratio is defined as a value obtained by dividing the width of one electrode finger by the distance between the center lines of the gaps between one electrode finger and the electrode fingers adjacent to both sides thereof, and the IDT includes a region formed by gradually changing the line occupying ratio from the center to both edges so that the frequency gradually becomes lower from the center to both edges than the frequency at the center of the IDT.

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Номер записи: 6
04-07-2013 дата публикации

Switchable filters and design structures

Номер: US20130169383A1
Автор: Anthony K. Stamper, James W. Adkisson, Jeffrey P. Gambino, Mark D. Jaffe, Panglijen Candra, Randy L. Wolf, Thomas J. DUNBAR
Принадлежит: International Business Machines Corp

Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes.

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Номер записи: 7
03-10-2013 дата публикации

Resonator element, resonator, electronic device, electronic apparatus, and mobile object

Номер: US20130257554A1
Автор: Osamu Ishii, Takao Morita
Принадлежит: Seiko Epson Corp

A resonator element includes a substrate vibrating in a thickness-shear vibration mode, a first excitation electrode disposed on one principal surface of the substrate, and has a shape obtained by cutting out four corners of a quadrangle, and a second excitation electrode disposed on the other principal surface of the substrate, and a ratio (S 2 /S 1 ) between the area S 1 of the quadrangle and the area S 2 of the first excitation electrode fulfills 87.7%≦(S 2 /S 1 )<95.0%.

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Номер записи: 8
16-01-2014 дата публикации

Semiconductor device, manufacturing method of the same, and mobile phone

Номер: US20140018126A1
Автор: Atsushi Isobe, Kengo Asai
Принадлежит: Renesas Electronics Corp

A technique capable of maintaining the filter characteristics of a transmitting filter and a receiving filter by reducing the influences of heat from the power amplifier given to the transmitting filter and the receiving filter as small as possible in the case where the transmitting filter and the receiving filter are formed on the same semiconductor substrate together with the power amplifier in a mobile communication equipment typified by a mobile phone is provided. A high heat conductivity film HCF is provided on a passivation film PAS over the entire area of a semiconductor substrate 1 S including an area AR 1 on which an LDMOSFET is formed and an area AR 2 on which a thin-film piezoelectric bulk wave resonator BAW is formed. The heat mainly generated in the LDMOSFET is efficiently dissipated in all directions by the high heat conductivity film HCF formed on the surface of the semiconductor substrate 1 S.

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Номер записи: 9
27-03-2014 дата публикации

Acoustic structure comprising at least one resonator and at least one cointegrated capacitor in one and the same piezoelectric or ferroelectric layer

Номер: US20140085020A1
Автор: Alexandre Reinhardt, Jean-Baptiste David, Julie Abergel
Принадлежит: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA

An acoustic structure, comprising at least one acoustic resonator exhibiting at least one resonant frequency in a band of operating frequencies and an integrated capacitor, further comprises: a stack of layers, comprising at least one active layer of piezoelectric material or of ferroelectric material; the resonator being frequency tunable and being produced by a first subset of layers of the stack comprising the at least one active layer and at least two electrodes; the integrated capacitor being produced by a second subset of layers comprising the active layer and at least two electrodes; the first and second subsets of layers being distinguished by a modification of layers so as to exhibit different resonant frequencies.

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Номер записи: 10
02-01-2020 дата публикации

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, CIRCUIT SUBSTRATE, AND ELECTRONIC APPARATUS

Номер: US20200006200A1
Автор: HASHIMOTO Nobuaki, Ito Haruki
Принадлежит:

A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side. 1. A device comprising:a semiconductor substrate including a first face and a second face on a side opposite to the first face;a foundation layer formed on the first face of the semiconductor substrate;a first electrode formed on the foundation layer;a second electrode formed on the foundation layer;an integrated circuit comprising at least two interconnected semiconductor devices, the at least two interconnected semiconductor devices formed on the first face of the semiconductor substrate, and the integrated circuit being electrically connected to the first electrode and the second electrode;a groove portion formed through the semiconductor substrate;an insulating film formed on a side wall of the groove portion;a conductive portion formed inside the groove portion on the insulating film and electrically connected to the second electrode;a first insulation layer formed on the foundation layer;a first interconnection formed on the first insulation layer, the first interconnection being electrically connected to the first electrode;a second insulation layer formed on the first interconnection and the first insulation layer;a second interconnection formed on the second insulation layer, the second interconnection being electrically connected to the first interconnection; anda third insulation layer formed on the second interconnection and the second insulation layer; ...

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Номер записи: 11
03-01-2019 дата публикации

Frequency adjustment method of vibrator element, vibrator element, vibrator, electronic device, and vehicle

Номер: US20190006575A1
Автор: Keiichi Yamaguchi, Masahiro Oshio, Ryuta NISHIZAWA, Seiichiro Ogura
Принадлежит: Seiko Epson Corp

A frequency adjustment method of a vibrator element includes preparing a vibrator element that has a vibrating arm, a first weight placed on one principal surface of the vibrating arm, and a second weight placed on the other principal surface of the vibrating arm, in which the first weight has a non-overlapping region which does not overlap the second weight in a plan view in a normal direction of the principal surface, preparing a substrate including a wiring portion, and fixing the vibrator element to the substrate by causing the other principal surface side of the vibrator element to face the substrate side, and irradiating the non-overlapping region of the first weight with an energy ray from one principal surface side, removing a portion of the non-overlapping region of the first weight, and adjusting a resonance frequency of the vibrating arm.

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Номер записи: 12
03-01-2019 дата публикации

Resonator Device, Electronic Apparatus, And Vehicle

Номер: US20190006989A1
Автор: Akio Tsutsumi, Fumikazu Komatsu, Takashi Kurashina
Принадлежит: Seiko Epson Corp

A resonator device includes first and second resonators and an integrated circuit device. The integrated circuit device includes a first oscillation circuit configured to oscillate the first resonator, a second oscillation circuit configured to oscillate the second resonator, and a processing circuit configured to perform processing by using frequency difference information or frequency comparison information between a first clock signal generated by oscillating the first resonator and a second clock signal generated by oscillating the second resonator. The first resonator is supported on the integrated circuit device by a first support portion. The second resonator is supported on the integrated circuit device by a second support portion.

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Номер записи: 13
03-01-2019 дата публикации

PIEZOELECTRIC THIN FILM RESONATOR, FILTER, AND MULTIPLEXER

Номер: US20190007029A1
Автор: ISHIDA Mamoru, TANIGUCHI Shinji
Принадлежит: TAIYO YUDEN CO., LTD.

A piezoelectric thin film resonator includes: a substrate; a lower electrode located on the substrate through an air gap; a piezoelectric film located so as to have a resonance region where the lower electrode and an upper electrode face each other across the piezoelectric film and having a lower piezoelectric film and an upper piezoelectric film, in an extraction region where the lower electrode is extracted from the resonance region, a lower end of a first end face of the lower piezoelectric film being substantially aligned with or located further out than an outer periphery of the air gap, a second end face of the upper piezoelectric film being inclined, an upper end of the second end face being substantially aligned with or located further in than the outer periphery, the lower piezoelectric film having a substantially uniform film thickness between the first end face and the second end face. 1. A piezoelectric thin film resonator comprising:a substrate;a lower electrode that is located on the substrate through an air gap;an upper electrode located on the lower electrode;a piezoelectric film that is located so as to have a resonance region where the lower electrode and the upper electrode face each other across at least a part of the piezoelectric film, and has a lower piezoelectric film located on the lower electrode and an upper piezoelectric film located between the lower piezoelectric film and the upper electrode, in an extraction region where the lower electrode is extracted from the resonance region, a lower end of a first end face of the lower piezoelectric film being substantially aligned with or located further out than an outer periphery of the air gap, a second end face of the upper piezoelectric film being inclined so that the upper piezoelectric film widens at smaller distances to the lower electrode, an upper end of the second end face being substantially aligned with or located further in than the outer periphery of the air gap, the lower ...

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Номер записи: 14
27-01-2022 дата публикации

Electrode defined resonator

Номер: US20220029602A1
Автор: Di Lan, Giovanni Barbarossa, Wen-Qing Xu
Принадлежит: II VI Delaware Inc

A bulk acoustic resonator operable in a bulk acoustic mode includes a resonator body mounted to a separate carrier that is not part of the resonator body. The resonator body includes a piezoelectric layer, a device layer, and a top conductive layer on the piezoelectric layer opposite the device layer. A surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to the carrier.

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Номер записи: 15
16-01-2020 дата публикации

Laterally Vibrating Bulk Acoustic Wave Resonator

Номер: US20200021272A1
Автор: SEGOVIA FERNANDEZ Jeronimo, Smeys Peter, Yen Ting-Ta
Принадлежит:

A laterally vibrating bulk acoustic wave (LVBAW) resonator includes a piezoelectric plate sandwiched between first and second metal layers. The second metal layer is patterned into an interdigital transducer (IDT) with comb-shaped electrodes having interlocking fingers. The width and pitch of the fingers of the electrodes determine the resonant frequency. A combined thickness of the first and second metal layers and the piezoelectric layer is less than the pitch of the interlocking fingers. 1. A microelectromechanical system (MEMS) device comprising:a laterally vibrating bulk acoustic wave (LVBAW) resonator, the LVBAW resonator comprising:a substrate;an acoustic mirror overlying a portion of the substrate;a first metal layer overlying a portion of the acoustic mirror, the first metal layer having a first thickness;a piezoelectric plate overlying the first metal layer, the piezoelectric layer having a second thickness; anda second metal layer overlying a portion of the piezoelectric plate, the second metal layer having a third thickness, the second metal layer patterned into an interdigital transducer (IDT), the IDT having first and second comb-shaped electrodes, the first comb-shaped electrode having first fingers, the second comb-shaped electrode having second fingers, the first fingers interlocking with the second fingers, and a sum of the first, second and third thicknesses being less than a respective pitch of both first and second fingers.2. The MEMS device of claim 1 , wherein the acoustic mirror is a multiple layer Bragg mirror claim 1 , adjacent ones of the multiple layers have different acoustic impedance claim 1 , and a thickness of each of the multiple layers is selected for the Bragg mirror to have a minimal transmission coefficient at different frequencies.3. The MEMS device of claim 1 , wherein the IDT has opposite first and second sides claim 1 , and the second metal layer is patterned into a first side reflector having first metal strip lines ...

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Номер записи: 16
28-01-2016 дата публикации

Resonator element, resonator, oscillator, electronic apparatus, and mobile object

Номер: US20160028369A1
Автор: Yusuke Yamamoto
Принадлежит: Seiko Epson Corp

A resonator element includes a substrate region sandwiched by first and second excitation electrodes. The region is located within a quadrangle having four 90° corners, a pair of first sides along a thickness-shear vibration direction, and a pair of second sides perpendicular to the vibration direction. The region includes a side or a circular arc in contact with each of the first and second sides, and an outer edge recessed from at least two corners of the quadrangle in a direction intersecting the vibration direction. Further, assuming a maximum length of the region along the vibration direction is Lx, and a length of the outer edge along the vibration direction is lx, 13.7%≦(lx/Lx)≦46.0%.

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Номер записи: 17
24-01-2019 дата публикации

ELECTRONIC MODULE AND METHOD OF MANUFACTURING ELECTRONIC MODULE

Номер: US20190028083A1
Автор: YASUDA Junpei
Принадлежит:

An electronic module includes a substrate, at least one first electronic component that includes a hollow portion, at least one second electronic component that includes no hollow portion, a first sealing resin, and a second sealing resin. The at least one first electronic component is sealed with the first sealing resin. The at least one second electronic component has a narrowest pitch between the electrodes that are provided on the mounting surface, and at least the mounting surface including the electrodes of the at least one second electronic component are sealed with the second sealing resin. The volume percentage of a filler that is included in the first sealing resin is larger than the volume percentage of a filler that is included in the second sealing resin. 1. An electronic module comprising:a substrate;at least one first electronic component that includes electrodes provided on a mounting surface thereof on the substrate and that includes a hollow portion;at least one second electronic component that includes electrodes provided on a mounting surface thereof on the substrate and that includes no hollow portion;a first sealing resin; anda second sealing resin; whereinthe at least one first electronic component is sealed with the first sealing resin;the at least one second electronic component has a narrowest pitch between the electrodes that are provided on the mounting surface, and at least the mounting surface including the electrodes of the at least one second electronic component are sealed with the second sealing resin; anda volume percentage of a filler that is included in the first sealing resin is larger than a volume percentage of a filler that is included in the second sealing resin.2. The electronic module according to claim 1 , wherein humidity resistance of the first sealing resin is higher than humidity resistance of the second sealing resin.3. The electronic module according to claim 1 , whereinthe first sealing resin is provided on one ...

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Номер записи: 18
23-01-2020 дата публикации

Electrode Defined Resonator

Номер: US20200028484A1
Автор: Barbarossa Giovanni, Lan Di, Xu Wen-Qing
Принадлежит:

A bulk acoustic resonator operable in a bulk acoustic mode includes a resonator body mounted to a separate carrier that is not part of the resonator body. The resonator body includes a piezoelectric layer, a device layer, and a top conductive layer on the piezoelectric layer opposite the device layer. A surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to the carrier. 1. A bulk acoustic resonator comprising:a resonator body including:a piezoelectric layer;a device layer; anda top conductive layer on the piezoelectric layer opposite the device layer, wherein substantially all of a surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to a carrier that is separate from the resonator body.2. The bulk acoustic resonator of claim 1 , wherein all of the surface of the device layer opposite the piezoelectric layer is for mounting the entirety of the resonator body to the carrier.3. The bulk acoustic resonator of claim 1 , further comprising a connecting structure for conducting a signal to the top conductive layer.4. The bulk acoustic resonator of claim 1 , wherein the device layer comprises diamond.5. The bulk acoustic resonator of claim 1 , wherein the top conductive layer comprises spaced conductive lines or fingers.6. The bulk acoustic resonator of claim 1 , wherein the resonator body further comprises a bottom conductive layer between the piezoelectric layer and the device layer.7. The bulk acoustic resonator of claim 1 , wherein the surface of the device layer facing the carrier is for mounting in its entirety directly to the carrier.8. The bulk acoustic resonator of claim 1 , wherein the resonator body further comprises at least one temperature compensation layer positioned:on the top conductive layer opposite the piezoelectric layer; orbetween the piezoelectric layer and the device layer.9. The bulk acoustic resonator of claim 1 , wherein:the resonator body further comprises a ...

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Номер записи: 19
17-02-2022 дата публикации

Electro acoustic rf filter with impedance element having improved performance and multiplexer component comprising the filter

Номер: US20220052669A1
Автор: Ansgar Schäufele, Gholamreza Dadgar Javid, Thomas BAUER
Принадлежит: RF360 Europe GmbH

An improved electro acoustic RF filter (FC) is provided. The RF filter comprises an electro acoustic resonator (EAR) connected between an input port and an output port, an impedance element and a damping and/or dissipation element (DE) in mechanical contact to the impedance element. The damping and/or dissipation element is provided and configured to remove acoustic energy from the impedance element which has a similar construction as the resonator on the same substrate. With such a construction an acoustically inactive impedance element (AIIE) is obtained.

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Номер записи: 20
31-01-2019 дата публикации

Elastic wave device and manufacturing method therefor

Номер: US20190036510A1
Автор: Daisuke Sekiya, Taku KIKUCHI
Принадлежит: Murata Manufacturing Co Ltd

An elastic wave device includes an interdigital transducer electrode and a wiring electrode made of metal and provided on a first main surface of a piezoelectric substrate. Via hole electrodes penetrate the piezoelectric substrate. Each via hole electrode is connected to an external connection terminal. A cover member defines a hollow space in which the interdigital transducer electrode is sealed, together with the first main surface of the piezoelectric substrate. A heat dissipating member is provided on the wiring electrode to extend from the wiring electrode toward the cover member and penetrate the cover member.

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Номер записи: 21
07-02-2019 дата публикации

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, CIRCUIT SUBSTRATE, AND ELECTRONIC APPARATUS

Номер: US20190043786A1
Автор: HASHIMOTO Nobuaki, Ito Haruki
Принадлежит:

A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side. 1. A device comprising:a semiconductor substrate including a first face and a second face on a side opposite to the first face;an external connection terminal formed on the first face of the semiconductor substrate;a first electrode formed on the first face of the semiconductor substrate and electrically connected to the external connection terminal;a second electrode formed on the first face of the semiconductor substrate;an integrated circuit formed on the first face, the integrated circuit being electrically connected to the first electrode and the second electrode;a rear face electrode formed on the second face of the semiconductor substrate;a groove portion formed in the semiconductor substrate, the groove portion having an inner wall;an insulating film formed on side walls of the groove portion; anda conductive portion formed inside the groove portion on the insulating portion and electrically connected to the second electrode and the rear face electrode;wherein the integrated circuit and the first electrode are electrically disposed between the second electrode and the external connection terminal.2. The device of claim 1 , wherein the semiconductor substrate is silicon.3. The device of claim 2 , wherein:the second electrode comprises a second electrode rear face facing the first face of the semiconductor substrate;the rear face electrode comprises a rear face ...

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Номер записи: 22
18-02-2021 дата публикации

CIRCUIT MODULE

Номер: US20210050382A1
Автор: KAWASAKI Koichiro
Принадлежит:

A circuit module includes a mounting substrate including a conductor wiring, an elastic wave element provided in or on a main surface of the mounting substrate, an electric element provided in or on the main surface, the electric element being different from the elastic wave element, and an insulating resin portion provided in or on the main surface to cover the elastic wave element and the electric element. The elastic wave element and the electric element are connected to each other by the conductor wiring. A height of the elastic wave element is about 0.28 mm or less, which is less than that of the electric element. The thickness of the resin portion in a region in which the resin portion covers the elastic wave element is greater than the thickness of the resin portion in a region in which the resin portion covers the electric element. 1. A circuit module comprising:a mounting substrate including a conductor wiring;an elastic wave element provided in or on a main surface of the mounting substrate;an electric element provided in or on the main surface of the mounting substrate, the electric element being different from the elastic wave element; anda resin portion provided in or on the main surface of the mounting substrate to cover the elastic wave element and the electric element; whereinthe resin portion is an insulator;the elastic wave element and the electric element are connected to each other by the conductor wiring and are arranged adjacent to one another;a height of the elastic wave element is less than a height of the electric element;a thickness of the resin portion in a region in which the resin portion covers the elastic wave element is greater than a thickness of the resin portion in a region in which the resin portion covers the electric element;the elastic wave element includes a piezoelectric substrate and an interdigital transducer (IDT) electrode provided in or on a main surface of the piezoelectric substrate; andthe main surface of the ...

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Номер записи: 23
03-03-2022 дата публикации

METAL RIBS IN ELECTROMECHANICAL DEVICES

Номер: US20220069795A1
Автор: MATSUURA Masamitsu, Nguyen Hau, Poddar Anindya
Принадлежит:

In examples, a device comprises a semiconductor die, a thin-film layer, and an air cavity positioned between the semiconductor die and the thin-film layer. The air cavity comprises a resonator positioned on the semiconductor die. A rib couples to a surface of the thin-film layer opposite the air cavity. 1. A device , comprising:a semiconductor die;a thin-film layer;an air cavity positioned between the semiconductor die and the thin-film layer, the air cavity comprising a resonator positioned on the semiconductor die; anda rib coupled to a surface of the thin-film layer opposite the air cavity.2. The device of claim 1 , wherein the rib comprises a metal rib having a thickness ranging from 1 micron to 100 microns and having a stiffness of at least 120KN/m.3. The device of claim 1 , wherein the rib has a surface with an area matching or exceeding an area of a surface of a platform on which the resonator is positioned.4. The device of claim 1 , wherein the rib is a continuous member.5. The device of claim 1 , wherein the rib has six surfaces.6. The device of claim 1 , further comprising a conductive terminal formed in the thin-film layer and coupled to an active surface of the semiconductor die.7. The device of claim 1 , wherein the thin-film layer comprises a polymer having a thickness ranging from 1 micron to 100 microns.8. The device of claim 1 , wherein the thin-film layer has a thickness of at least 10 microns.9. The device of claim 1 , wherein the device comprises a micro-electro-mechanical system (MEMS) device or a bulk acoustic wave (BAW) device.10. The device of claim 1 , further comprising a mold compound covering the semiconductor die claim 1 , the thin-film layer claim 1 , and the rib.11. The device of claim 1 , wherein the air cavity has a depth ranging from 50 microns to 10 millimeters.12. A device claim 1 , comprising:a semiconductor die;an insulative layer;an air cavity positioned between the semiconductor die and the insulative layer, the air cavity ...

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Номер записи: 24
15-05-2014 дата публикации

Electronic component, method of manufacturing same, composite module including electronic component, and method of manufacturing same

Номер: US20140131853A1
Автор: Tadaji Takemura
Принадлежит: Murata Manufacturing Co Ltd

A method of manufacturing a composite module prevents a connection electrode electrically coupled to a functional element from separating from a first principal surface of an element substrate. A transmission filter element, a reception filter element, connection electrodes electrically coupled to the transmission filter element and the reception filter element, and an insulating layer surrounding the transmission filter element, the reception filter element, and the connection electrodes are disposed on a first principal surface of an element substrate. The insulating layer covers at least a portion of the surface of each of the connection electrodes. Because the portion of the surface of each of the connection electrodes in an exposed state is covered with the insulating layer, the connection electrodes electrically coupled to the transmission filter element and the reception filter element are prevented from separating from the first principal surface of the element substrate.

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Номер записи: 25
14-02-2019 дата публикации

Multi-Function Frequency Control Device

Номер: US20190052243A1
Автор: Robinson Brent John
Принадлежит:

A single frequency control device incorporating a high frequency resonator, a low frequency resonator and a temperature sensing element, the latter thermally coupled closely to the said resonators to facilitate temperature sensing with higher resolution and accuracy. Additional benefits offered by the structure include smaller size and lower cost. 1. A frequency control device , constructed as a single component , comprising at least three thermally coupled elements: a first resonating element whose resonant frequency is within the HF band or higher , a second resonating element whose resonant frequency is within the LF band or lower , and a temperature sensing element , and which is arranged to use both an output of the said temperature sensing element and an output frequency of the said second resonating element in correcting for deviation in the output frequency of the said first resonating element or second resonating element due to temperature variations.2. A frequency control device according to arranged to determine the output frequency of the said second resonating element using the output frequency of the said first resonating element as a frequency measurement reference.3. A frequency control device as in wherein the said first resonating element and the said second resonating element are located in a common hermetically sealed cavity.4. A frequency control device as in wherein the said first resonating element and the said second resonating element are located in separate hermetically sealed cavities.5. A frequency control device as in wherein the temperature sensing element is located in a separate cavity.6. A frequency control device as in wherein the said first resonating element claim 1 , the said second resonating element claim 1 , and the temperature sensing element are located in a common hermetically sealed cavity.7. A frequency control device as in wherein the said single component comprises a multi-layer ceramic package.8. A frequency control ...

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Номер записи: 26
25-02-2021 дата публикации

TORSIONAL MODE QUARTZ CRYSTAL DEVICE

Номер: US20210058064A1
Автор: Chen Jian Feng, Fang Yue
Принадлежит:

The disclosed technology generally relates to quartz crystal devices and more particularly to quartz crystal devices configured to vibrate in torsional mode. In one aspect, a quartz crystal device configured for temperature sensing comprises a fork-shaped quartz crystal comprising a pair of elongate tines laterally extending from a base region in a horizontal lengthwise direction of the fork-shaped quartz crystal, wherein each of the tines has formed on one or both of opposing sides thereof a pair of vertically recessed groove structures laterally elongated in the horizontal lengthwise direction, wherein the pair of groove structures are separated in a horizontal widthwise direction by a line structure. The quartz crystal device further comprises a first electrode and a second electrode formed on the one or both of the opposing sides of each of the tines and configured such that, when an electrical bias is applied between the first and second electrodes, the fork-shaped quartz crystal vibrates in a torsional mode in which each of the tines twists about a respective axis extending in the horizontal lengthwise direction. 1. A quartz crystal device configured for temperature sensing , comprising:a fork-shaped quartz crystal comprising a pair of elongate tines laterally extending from a base region in a horizontal lengthwise direction of the fork-shaped quartz crystal, wherein each of the tines has formed on one or both of opposing sides thereof a pair of vertically recessed groove structures laterally elongated in the horizontal lengthwise direction, wherein the pair of groove structures are separated in a horizontal widthwise direction by a line structure; anda first electrode and a second electrode formed on the one or both of the opposing sides of each of the tines and configured such that, when an electrical bias is applied between the first and second electrodes, the fork-shaped quartz crystal vibrates in a torsional mode in which each of the tines twists about a ...

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Номер записи: 27
10-03-2022 дата публикации

INTEGRATION STRUCTURE OF CRYSTAL OSCILIATOR AND CONTROL CIRCUIT AND INTEGRATION METHOD THEREFOR

Номер: US20220077231A1
Автор: QIN Xiaoshan
Принадлежит:

A structure and method for integrating a crystal resonator with a control circuit are disclosed. A piezoelectric vibrator () is formed on a back side of a device wafer () containing the control circuit, and planar fabrication processes are utilized to form a cap layer () which encloses the piezoelectric vibrator () within an upper cavity (). Additionally, a semiconductor die () can be bonded to a front side of the device wafer (). In addition to an increased degree of integration of the crystal resonator due to such integration with both the control circuit () and the semiconductor die (), this also allows on-chip modulation of the crystal resonator's parameters. Moreover, compared with traditional crystal resonators, the resulting crystal resonator is more compact in size and hence less power-consuming. 1. A method for integrating a crystal resonator with a control circuit , comprising:providing a device wafer having the control circuit formed therein;forming a lower cavity in the device wafer, the lower cavity having an opening formed at a back side of the device wafer;forming a piezoelectric vibrator comprising a top electrode, a piezoelectric crystal and a bottom electrode on the back side of the device wafer, the piezoelectric vibrator arranged in alignment with the lower cavity, and forming a first connecting structure electrically connecting the top and bottom electrodes of the piezoelectric vibrator to the control circuit;forming a cap layer over the back side of the device wafer, which hoods the piezoelectric vibrator and delimits an upper cavity of the crystal resonator together with the piezoelectric vibrator and the device wafer; andbonding a semiconductor die to a front side of the device wafer and forming a second connecting structure electrically connecting the semiconductor die to the control circuit.2. The method for integrating a crystal resonator with a control circuit of claim 1 , wherein the device wafer comprises a substrate wafer and a ...

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Номер записи: 28
10-03-2022 дата публикации

INTEGRATED STRUCTURE OF AND INTEGRATED METHOD FOR CRYSTAL RESONATOR AND CONTROL CIRCUIT

Номер: US20220077232A1
Автор: QIN Xiaoshan
Принадлежит:

A structure and method for integrating a crystal resonator with a control circuit are disclosed. The resonator is formed by forming a lower cavity () in the device wafer () containing the control circuit () and a piezoelectric vibrator () on a front side (U) of the device wafer () and by fabricating a cap layer () using planar fabrication processes, which encloses the piezoelectric vibrator () within an upper cavity (). In addition, a semiconductor die () may be bonded to a back side (D) of the device wafer (), helping in additionally increasing the integration of the crystal resonator and allowing on-chip modulation of the crystal resonator's parameters. In this way, in addition to being able to integrate with other semiconductor components more easily with a higher degree of integration, the crystal resonator is more compact in size and less power-consuming. 1. A method for integrating a crystal resonator with a control circuit , comprising:providing a device wafer having the control circuit formed therein;forming a lower cavity of the crystal resonator in the device wafer by etching the device wafer from a front side thereof;forming a piezoelectric vibrator comprising a top electrode, a piezoelectric crystal and a bottom electrode on the front side of the device wafer above the lower cavity and forming a first connecting structure, the top and bottom electrodes of the piezoelectric vibrator electrically connecting to the control circuit via the first connecting structure;forming a cap layer on the front side of the device wafer, the cap layer hooding the piezoelectric vibrator and delimiting an upper cavity of the crystal resonator together with the piezoelectric vibrator and the device wafer; andbonding a semiconductor die to a back side of the device wafer and forming a second connecting structure, the semiconductor die electrically connecting to the control circuit via the second connecting structure.2. The method for integrating a crystal resonator with a ...

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Номер записи: 29
04-03-2021 дата публикации

Rf acoustic wave resonators integrated with high electron mobility transistors including a shared piezoelectric/buffer layer and methods of forming the same

Номер: US20210067123A1
Автор: Craig Moe, Jeffrey B. Shealy, Mary Winters
Принадлежит: Akoustis Inc

An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.

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Номер записи: 30
04-03-2021 дата публикации

Monolithic die with acoustic wave resonators and active circuitry

Номер: US20210067132A1
Автор: Aleksandar Aleksov, Feras Eid, Georgios Dogiamis, Johanna M. Swan, Telesphor Kamgaing
Принадлежит: Intel Corp

Embodiments may relate to a radio frequency (RF) front-end module (FEM). The RF FEM may include an integrated die with an active portion and an acoustic wave resonator (AWR) portion adjacent to the active portion. The RF FEM may further include a lid coupled with the die. The lid may at least partially overlap the AWR portion at a surface of the die. Other embodiments may be described or claimed.

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Номер записи: 31
17-03-2022 дата публикации

INTEGRATED STRUCTURE OF CRYSTAL RESONATOR AND CONTROL CIRCUIT AND INTEGRATION METHOD THEREFOR

Номер: US20220085101A1
Автор: QIN Xiaoshan
Принадлежит:

An integrated structure of crystal resonator and control circuit and an integration method therefor. A lower cavity is formed in a device wafer, and an upper cavity is formed in a substrate. A bonding process is then performed to bond the device wafer and the substrate together in such a manner that a piezoelectric vibrator is sandwiched between the device wafer and the substrate, with the lower and upper cavities being located on opposing sides of the piezoelectric vibrator, thus resulting in the formation of the crystal resonator. Moreover, the crystal resonator is brought into electrical connection with the control circuit, achieving integration of the two. This crystal resonator is more compact in size, less power-consuming and easier to integrate with other semiconductor components with a higher degree of integration, compared with traditional crystal resonators. 1. A method for integrating a crystal resonator with a control circuit , comprising:providing a device wafer in which the control circuit is formed, and etching the device wafer to form a lower cavity for the crystal resonator;providing a substrate and etching the substrate to form, for the crystal resonator, an upper cavity in positional correspondence with the lower cavity;forming a piezoelectric vibrator comprising a top electrode, a piezoelectric crystal and a bottom electrode, which are formed either on a front side of the device wafer or on the substrate;forming a connecting structure on the device wafer or on the substrate; andbonding the substrate to the front side of the device wafer such that the piezoelectric vibrator is situated between the device wafer and the substrate, with the upper and lower cavities being located on opposing sides of the piezoelectric vibrator, and electrically connecting both the top and bottom electrodes of the piezoelectric vibrator to the control circuit through the connecting structure.2. The method for integrating a crystal resonator with a control circuit ...

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Номер записи: 32
17-03-2022 дата публикации

Acoustic wave device, and preparation method therefor and temperature control method thereof

Номер: US20220085786A1
Автор: Genlin ZHENG, Guohao WANG, Hailong Chen, QUAN Wang, Shumin Zhang
Принадлежит: Hangzhou Sappland Microelectronics Technology Co ltd

An acoustic wave device and a preparation method therefor, and a temperature control method of the acoustic wave. The preparation method comprises: providing a first substrate and a second substrate (S 110 ); forming an acoustic wave structure on the first substrate (S 120 ); forming a temperature measuring resistor on the first substrate (S 130 ); forming a TEC device on the second substrate (S 140 ); and bonding the first substrate and the second substrate via metal fusion to produce the acoustic wave device (S 150 ).

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Номер записи: 33
17-03-2022 дата публикации

Integrated structure of crystal resonator and control circuit and integration method therefor

Номер: US20220085788A1
Автор: Xiaoshan QIN
Принадлежит: Ningbo Semiconductor International Corp Shanghai Branch

An integrated structure of crystal resonator and control circuit (110) and an integration method therefor. A lower cavity (102) is formed in a device wafer (100) containing the control circuit (110), and an upper cavity (310) is formed in a substrate (300). A bonding process is performed to bond the substrate (300) to the device wafer (100) in such a manner that the piezoelectric vibrator (200) is sandwiched between the device wafer (100) and the substrate (300). In this way, integration of the crystal resonator and the control circuit (110) is achieved. A semiconductor die (600) can be further bonded to the same semiconductor substrate. This helps in improving performance of the crystal resonator by allowing on-chip modulation of its parameters. This crystal resonator is more compact in size, less power-consuming and easier to integrate with other semiconductor components with a higher degree of integration, compared with traditional crystal resonators.

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Номер записи: 34
28-02-2019 дата публикации

RESONATOR ELEMENT, RESONATOR, ELECTRONIC DEVICE, ELECTRONIC APPARATUS, MOBILE BODY AND METHOD OF MANUFACTURING RESONATOR ELEMENT

Номер: US20190067549A1
Автор: FUJIHARA Yoshitaka, HATANAKA Kazuhisa, NAITO Matsutaro
Принадлежит:

A resonator element includes: a substrate; and an electrode that includes a first conductive layer provided on a surface of the substrate, and a second conductive layer, provided on the opposite side to the first conductive layer on the substrate side, which is disposed within an outer edge of the first conductive layer when seen in a plan view from a direction perpendicular to the surface. 1. A resonator element comprising:a substrate having a front surface and a back surface and a plurality of edges that connect the front surface and the back surface, and having a mesa that protrudes from each of the front surface and the back surface of the substrate; andan electrode formed on either the front surface or the back surface of the substrate that includes a lower conductive layer and an upper conductive layer that is located on the lower conductive layer; an excitation electrode that is located on the mesa; and', 'a lead electrode that extends from the excitation electrode toward one of the plurality of edges of the substrate;, 'wherein the electrode includeswherein an area of the excitation electrode is less than that of the mesa;the lead electrode is connected to the excitation electrode at a location on the mesa, and the lead electrode extends from the location and crosses an outer edge of the mesa; andthe lead electrode includes a pair of outer edges that extend along a direction in which the lead electrode extends toward the one edge of the substrate, the pair of outer edges being defined by a pair of outer edges of the lower conductive layer; anda pair of edges of the upper conductive layer that extend along the direction are arranged between the pair of outer edge of the lower conductive layer in a plan view of the substrate.2. The resonator element according to claim 1 , wherein the upper conductive layer is circumferentially recessed relative to an outer peripheral edge of the lower conductive layer in a plan view.3. The resonator element according to claim ...

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Номер записи: 35
08-03-2018 дата публикации

Tunable Film Bulk Acoustic Resonators and Filters with Integrated Biasing Resistors

Номер: US20180069528A1
Автор: Andy Shih, Chunong Qiu, Cindy X. Qiu, Ishiang Shih, Julia Qiu, Yi-Chi Shih
Принадлежит: Andy Shih, Chunong Qiu, Cindy X. Qiu, Ishiang Shih, Julia Qiu, Yi-Chi Shih

In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies one for transmit and the other for receive. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The present invention provides frequency tunable film bulk acoustic resonators (FBAR) with different structures. Thin film biasing resistors are integrated into the FBAR structure for DC biasing and RF isolation. A plurality of the present tunable FBARs are connected to form microwave filters with tunable bandpass frequencies and oscillators with selectable resonating frequencies by varying DC biasing voltages to the resonators.

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Номер записи: 36
27-02-2020 дата публикации

Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus

Номер: US20200066616A1
Автор: Haruki Ito, Nobuaki Hashimoto
Принадлежит: Advanced Interconnect Systems Ltd

A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side.

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Номер записи: 37
27-02-2020 дата публикации

Vibrator, Oscillator, Electronic Device, And Vehicle

Номер: US20200067454A1
Автор: KIKUSHIMA Masayuki, KONDO Manabu
Принадлежит:

A vibrator includes a first substrate, a first lead frame provided in the first substrate, a package supported by the first lead frame, and a vibrating element housed in the package, in which the first lead frame has a first part coupled to the first substrate, a second part coupled to the package, and a third part coupling the first part with the second part, and including a curved portion, the first substrate has a first side and a second side opposite to each other in plan view, and a plurality of the first lead frames are provided at a side of the first side along the first side and provided at a side of the second side along the second side. 1. A vibrator comprising:a first substrate that has a first side and a second side opposite to each other in plan view;a plurality of first lead frames provided on the first substrate and arranged along the first side of the first substrate or arranged along the second side of the first substrate;a package supported by the first lead frames; anda vibrating element housed in the package, wherein a first part coupled to the first substrate,', 'a second part coupled to the package, and', 'a third part coupling the first part with the second part, and including a curved portion., 'each of the first lead frames has'}2. The vibrator according to claim 1 , whereinin the first lead frame provided at the first side of the first substrate, the first part and the second part are positioned between the curved portion and the second side of the first substrate in plan view, andin the first lead frame provided at the second side of the first substrate, the first part and the second part are positioned between the curved portion and the first side of the first substrate in plan view.3. The vibrator according to claim 1 , whereinin the first lead frame provided at the first side of the first substrate, the curved portion is positioned between the first part and the second side of the first substrate in plan view, andin the first lead frame ...

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Номер записи: 38
11-03-2021 дата публикации

Hybrid filter

Номер: US20210075399A1
Автор: Maximilian SCHIEK, Roland Rosezin
Принадлежит: RF360 Europe GmbH

The invention combines two filter technologies on a single device using the same substrate there for. On this substrate a filter circuit is arranged that has a ladder-type or a lattice arrangement of series and parallel impedance elements to provide a hybrid filter having for example a band pass function. The impedance elements are chosen from BAW resonators and LC elements.

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Номер записи: 39
05-03-2020 дата публикации

VIBRATOR DEVICE, AND ELECTRONIC DEVICE

Номер: US20200076367A1
Автор: MATSUZAWA Yusuke
Принадлежит:

A vibrator device includes a semiconductor substrate, a vibrator unit, a cover, and an insulating film. The vibrator unit is disposed at a first surface of the semiconductor substrate, and includes a vibrator element, and an excitation electrode disposed at the vibrator element and having a portion facing the semiconductor substrate. The cover is bonded to the first surface in a joint portion surrounding the vibrator unit. The insulating film is disposed at the first surface. The insulating film overlaps the portion of the excitation electrode in plan view, and is absent at the joint portion of the semiconductor substrate and the cover. 1. A vibrator device comprising:a semiconductor substrate; a vibrator element, and', 'an excitation electrode disposed at the vibrator element and having a portion facing the semiconductor substrate;, 'a vibrator unit disposed at a first surface of the semiconductor substrate and including'}a cover bonded to the first surface in a joint portion surrounding the vibrator unit; andan insulating film disposed at the first surface,the insulating film overlapping the portion of the excitation electrode in plan view, and being absent at the joint portion of the semiconductor substrate and the cover.2. The vibrator device according to claim 1 , wherein the semiconductor substrate and the cover are both made of a silicon material.3. The vibrator device according to claim 1 , wherein the semiconductor substrate includes a circuit electrically coupled to the vibrator unit.4. The vibrator device according to claim 1 , wherein the insulating film has a contour lying between the vibrator unit and the joint portion in plan view.5. The vibrator device according to claim 4 , wherein the contour of the insulating film lies along a contour of the vibrator unit.6. An electronic device comprising the vibrator device of . The present application is based on, and claims priority from JP Application Serial Number 2018-160744, filed Aug. 29, 2018, the ...

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Номер записи: 40
05-03-2020 дата публикации

WIDEBAND FILTER INCLUDING AN ACOUSTIC RESONATOR CHIP INTEGRATED WITH 3D INDUCTORS AND A 3D TRANSFORMER

Номер: US20200076405A1
Автор: Liu Kai, Tang Rui
Принадлежит:

A wideband filter includes a passive substrate and an acoustic resonator chip on the passive substrate. The wideband filter further includes a pair of 3D inductors and a 3D transformer on the passive substrate. The pair of 3D inductors and the 3D transformer are connected to the acoustic resonator chip. 1. A wideband filter , comprising:a passive substrate;an acoustic resonator chip on the passive substrate; anda pair of 3D inductors and a 3D transformer on the passive substrate and connected to the acoustic resonator chip.2. The wideband filter of claim 1 , in which the pair of 3D inductors are in a side-by-side configuration with the acoustic resonator chip between the pair of 3D inductors claim 1 , each on a surface of the passive substrate.3. The wideband filter of claim 1 , in which the pair of 3D inductors comprise through mold vias on a surface of the passive substrate.4. The wideband filter of claim 1 , further comprising a first ground component coupled to short a pair of outputs of the 3D transformer.5. The wideband filter of claim 4 , further comprising a second ground component coupled to an output of the acoustic resonator chip and an output of a first inductor of the pair of 3D inductors.6. The wideband filter of claim 5 , further comprising an input component coupled to an input of the acoustic resonator chip and an input of the first inductor of the pair of 3D inductors.7. The wideband filter of claim 5 , further comprising an output component coupled to an output of the acoustic resonator chip and an output of a second inductor of the pair of 3D inductors.8. The wideband filter of claim 1 , in which the acoustic resonator chip is a bulk acoustic wave (BAW) resonator or a surface acoustic wave (SAW) resonator.9. The wideband filter of claim 1 , in which the passive substrate comprises glass or diamond.10. The wideband filter of claim 1 , in which a passband of the wideband filter is greater than 200 MHz.11. A method of fabricating a wideband filter ...

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Номер записи: 41
22-03-2018 дата публикации

Tuning-fork type crystal resonator

Номер: US20180083596A1
Автор: Shingo Kawanishi, Yoshiteru Sato
Принадлежит: Nihon Dempa Kogyo Co Ltd

A tuning-fork type crystal resonator includes a base portion, a first vibration arm and a second vibration arm, a supporting arm, a first connection pad and a second connection pad, and a first excitation electrode and a second excitation electrode. The first excitation electrode is extended from the first connection pad so as to reach a side surface of the first vibration arm on the supporting arm side via a region including a part of a principal surface of the supporting arm and a part of a side surface of the supporting arm on the first vibration arm side, an inner bottom surface of a first bifurcated portion present between the supporting arm and the first vibration arm, and a circumferential portion of the first bifurcated portion in the base portion. The second excitation electrode is extended at a second bifurcated portion similarly to the first excitation electrode.

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Номер записи: 42
14-03-2019 дата публикации

ELASTIC WAVE DEVICE AND ELECTRONIC COMPONENT

Номер: US20190081610A1
Автор: Iwamoto Takashi
Принадлежит:

An elastic wave device includes a plate-shaped elastic wave element and a resin structure including a high elastic modulus resin portion and low elastic modulus resin portions. The low elastic modulus resin portions are provided in regions of side surfaces of an elastic wave element substrate, which extend from end portions at an IDT electrode formation surface side and do not reach a surface at a side opposite to an IDT electrode formation surface, and a remaining resin portion of a portion of the resin structure, which contacts with the side surfaces of the elastic wave element substrate, is the high elastic modulus resin portion. 1. An elastic wave device comprising:an elastic wave element including an elastic wave element substrate including an IDT electrode formation surface and an IDT electrode provided on the IDT electrode formation surface; anda resin structure including first and second main surfaces opposing each other and being embedded with the elastic wave element such that at least a portion of the IDT electrode formation surface is exposed at the first main surface side; whereinthe resin structure includes a high elastic modulus resin portion having a relatively high elastic modulus and a low elastic modulus resin portion having a relatively low elastic modulus;the low elastic modulus resin portion is provided in a region of a side surface of the elastic wave element substrate, which extends from an end portion at the IDT electrode formation surface side and does not reach a surface at a side opposite to the IDT electrode formation surface; anda remaining resin portion of a portion of the resin structure, which contacts with the side surface of the elastic wave element substrate, is the high elastic modulus resin portion.2. The elastic wave device according to claim 1 , wherein the IDT electrode formation surface of the elastic wave element substrate and the first main surface of the resin structure are flush with each other.3. The elastic wave device ...

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Номер записи: 43
14-03-2019 дата публикации

Signal Filtering Using Magnetic Coupling

Номер: US20190081612A1
Автор: Antonino Scuderi, Rui Tang
Принадлежит: Qualcomm Inc

An apparatus is disclosed for signal filtering using magnetic coupling. The apparatus includes a substrate having an interface disposed on a surface of the substrate. The interface includes multiple connectors and is configured to accept a filter die that includes an acoustic resonator network. The apparatus also includes multiple inductors that are supported by the substrate. The multiple inductors are connected to the multiple connectors of the interface and are configured to generate a mutual inductance based on individual inductors of the multiple inductors.

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Номер записи: 44
12-03-2020 дата публикации

WAFER LEVEL CHIP SCALE FILTER PACKAGING USING SEMICONDUCTOR WAFERS WITH THROUGH WAFER VIAS

Номер: US20200083202A1
Автор: Ramanathan Viswanathan, Shen Hong, Yota Jiro
Принадлежит:

A method of fabricating an electronics package includes forming a cavity in a first surface of a semiconductor substrate, forming one or more passive devices on the semiconductor substrate, forming a microelectromechanical device on a piezoelectric substrate, and bonding the semiconductor substrate to the piezoelectric substrate with the microelectromechanical device disposed within the cavity. 1. A method of fabricating an electronics package , the method comprising:forming a cavity in a first surface of a semiconductor substrate;forming one or more passive devices on the semiconductor substrate;forming a microelectromechanical device on a piezoelectric substrate; andbonding the semiconductor substrate to the piezoelectric substrate with the microelectromechanical device disposed within the cavity.2. The method of wherein the one or more passive devices are formed within the cavity.3. The method of wherein the one or more passive devices are formed on a second surface of the semiconductor wafer opposite the first surface.4. The method of further comprising forming bond pads for connection to a mounting substrate on the second surface of the semiconductor wafer.5. The method of further comprising electrically connecting the bond pads on the second surface of the semiconductor wafer and bond pads formed on the piezoelectric substrate.6. The method of further comprising forming one or more through wafer vias passing through the semiconductor substrate claim 5 , the one or more through wafer vias providing electrical communication between the bond pads on the second surface of the semiconductor wafer and the bond pads formed on the piezoelectric substrate.7. The method of further comprising hermetically sealing the cavity with a metallic seal ring.8. The method of comprising bonding the semiconductor substrate to the piezoelectric substrate with a transient liquid phase bond.9. The method of wherein forming the microelectromechanical device includes forming one of a ...

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Номер записи: 45
25-03-2021 дата публикации

Multifunctional Integrated Acoustic Devices and Systems Using Epitaxial Materials

Номер: US20210091746A1
Автор: Brian P. Downey, D. Scott KATZER, David J. Meyer, Eric N. Jin, Matthew T. Hardy, Neeraj Nepal, Vikrant J. Gokhale
Принадлежит: US Department of Navy

Acoustic wave devices based on epitaxially grown heterostructures comprising appropriate combinations of epitaxially grown metallic transition metal nitride (TMN) layers, epitaxially grown Group III-nitride (III-N) piezoelectric semiconductor thin film layers, and epitaxially grown perovskite oxide (PO) layers. The devices can include bulk acoustic wave (BAW) devices, surface acoustic wave (SAW) devices, high overtone bulk acoustic resonator (HBAR) devices, and composite devices comprising HBAR devices integrated with high-electron-mobility transistors (HEMTs).

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Номер записи: 46
29-03-2018 дата публикации

Resonator element, resonator, and electronic device

Номер: US20180091117A1
Автор: Yusuke Yamamoto
Принадлежит: Seiko Epson Corp

A resonator element includes a substrate that vibrates in a thickness shear vibration, a first excitation electrode that is provided on one main surface of the substrate and has a shape in which at least three corners of a virtual quadrangle are cut out, and a second excitation electrode that is provided on the other main surface of the substrate, and a ratio (S 2 /S 1 ) of an area S 1 of the virtual quadrangle and an area S 2 of the first excitation electrode satisfies a relationship of 69.2% (S 2 /S 1 ) 80.1%.

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Номер записи: 47
19-03-2020 дата публикации

Method of manufacture for single crystal capacitor dielectric for a resonance circuit

Номер: US20200091406A1
Автор: Jeffrey B. Shealy
Принадлежит: Akoustis Inc

A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.

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Номер записи: 48
08-04-2021 дата публикации

PEDESTAL MOUNTED WITH BLANK, CRYSTAL UNIT AND OSCILLATOR

Номер: US20210105000A1
Автор: SAITOH Takafumi
Принадлежит: NIHON DEMPA KOGYO CO., LTD.

A substantially rectangular pedestal for mounting a blank is provided, wherein angled portions at four corners of the main body of the pedestal is formed in a shape that is cut out obliquely. 1. A pedestal for mounting a blank , whereinpedestal is substantially rectangular, andangled portions at four corners of a main body of the pedestal is formed in a shape that is cut out obliquely.2. The pedestal according to claim 1 , comprising;a recess provided at a center of a surface of a main body of the pedestal; andan edge portion adjacent to the recess to which the blank is fixed, wherein the blank is beveled.3. A crystal unit claim 1 , wherein{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a blank is fixed to a surface of the pedestal according to , and'}the pedestal is provided on a substrate of a package.4. An oscillator claim 1 , wherein{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a blank is fixed to a surface of the pedestal according to ,'}the pedestal is provided on a substrate on a front surface of a package, andan oscillator circuit is provided on the substrate on the front surface of the package, or a substrate on a back surface of the package.5. A crystal unit claim 1 , wherein{'claim-ref': {'@idref': 'CLM-00002', 'claim 2'}, 'a blank is fixed to the surface of the pedestal according to , and'}the pedestal is provided on a substrate of a package.6. An oscillator claim 1 , wherein{'claim-ref': {'@idref': 'CLM-00002', 'claim 2'}, 'a blank is fixed to the surface of the pedestal according to ,'}the pedestal is provided on a substrate on a front surface of the package, andan oscillator circuit is provided on the substrate on the front surface or a substrate on a back surface of the package. This application claims the priority benefit of Japanese Patent Application No. 2019-183886, filed on Oct. 4, 2019. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.The disclosure ...

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Номер записи: 49
08-04-2021 дата публикации

Method for forming multiple bulk acoustic wave filters on shared die

Номер: US20210105005A1
Автор: Abhishek Dey, Akshara Kankar, NAN Wu, Stephane Richard Marie WLOCZYSIAK, Tomoya KOMATSU
Принадлежит: Skyworks Solutions Inc

Bulk acoustic wave resonators of two or more different filters can be on a common die. The two filters can be included in a multiplexer, such as a duplexer, or implemented as standalone filters. With bulk acoustic wave resonators of two or more filters on the same die, the filters can be implemented in less physical space compared to implementing the same filters of different die. Related methods, radio frequency systems, radio frequency modules, and wireless communication devices are also disclosed.

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Номер записи: 50
08-04-2021 дата публикации

BULK ACOUSTIC WAVE FILTER CO-PACKAGE

Номер: US20210105006A1
Автор: Dey Abhishek, Kankar Akshara, Komatsu Tomoya, WLOCZYSIAK Stephane Richard Marie, Wu Nan
Принадлежит:

Bulk acoustic wave resonators of two or more different filters can be on a common die. The two filters can be included in a multiplexer, such as a duplexer, or implemented as standalone filters. With bulk acoustic wave resonators of two or more filters on the same die, the filters can be implemented in less physical space compared to implementing the same filters of different die. Related methods, radio frequency systems, radio frequency modules, and wireless communication devices are also disclosed. 1. A multi-filter package comprising:a multi-filter die including at least a first filter and a second filter, the first filter including at least one bulk acoustic wave resonator;a packaging substrate supporting the multi-filter die;at least first, second, and third internal interconnect structures that provide electrical connections between an internal surface of the packaging substrate and an internal surface of the multi-filter die, at least one of the electrical connections providing a shared electrical connection for the first and second filters; anda packaging structure attached with the packaging substrate to form a package encapsulating the multi-filter die.2. The multi-filter package of wherein the second filter includes at least one bulk acoustic wave resonator.3. The multi-filter package of wherein the at least one bulk acoustic wave resonator of the first filter is in electrical communication with the at least one bulk acoustic wave resonator of the second filter by way of a conductive structure supported by the multi-filter die.4. The multi-filter package of wherein the shared electrical connection is a shared input/output port.5. The multi-filter package of wherein the shared electrical connection is an output of the first filter and an input to the second filter.6. The multi-filter package of wherein the shared electrical connection is a common node of a duplexer.7. The multi-filter package of wherein the first and second internal interconnect structures ...

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Номер записи: 51
04-04-2019 дата публикации

SMALL PIEZOELECTRIC RESONATOR

Номер: US20190103854A1
Автор: DALLA PIAZZA Silvio, STAUB Felix
Принадлежит: Micro Crystal SA

The invention relates to a piezoelectric resonator, which comprises a base and at least two vibrating arms () extending from the base, at least two grooves () being formed opposite each other on part of the length of the arms and on upper and lower faces of the arms. The depth of the groove on the upper face is less than 30% of the total thickness of each arm and the depth of the groove on the lower face is more than 50% of the total thickness of each arm, or reversely. 1. A piezoelectric resonator comprising a base and at least two vibrating arms connected to the base in a direction of a crystalline axis X , wherein the vibrating arms extend from the base in a direction of a crystalline axis +Y or −Y , wherein at least a first groove is formed on an upper face on a side +Z of each arm along the crystalline axis +Y or −Y on part of the length of the arms and wherein at least a second groove is formed on a lower face on a side −Z of each arm along the crystalline axis +Y or −Y on part of the length of the arms and opposite the first groove in an asymmetrical arrangement ,wherein the depth of the first groove is less than 30% of the total thickness of each arm or more than 50% of the total thickness of each arm, andwherein the depth of the second groove is more than 50% of the total thickness of each arm if the depth of the first groove is less than 30% of the total thickness of each arm, or less than 30% of the total thickness of each arm if the depth of the first groove is more than 50% of the total thickness of each arm.2. The piezoelectric resonator according to claim 1 , wherein the two vibrating arms are connected to the base in a direction of a crystalline axis X claim 1 , wherein the vibrating arms extend from the base in a direction of a crystalline axis +Y claim 1 , wherein at least a first groove is formed on an upper face on a side +Z of each arm along the crystalline axis +Y on part of the length of the arms and wherein at least a second groove is formed ...

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Номер записи: 52
29-04-2021 дата публикации

Electric device wafer

Номер: US20210126050A1
Автор: Ulrike Rösler, Veit Meister
Принадлежит: Qualcomm Inc, RF360 Europe GmbH

A device wafer comprises a silicon substrate, a piezoelectric layer arranged on and bonded to the silicon substrate and a structured metallization on top of the piezoelectric layer. The metallization forms functional device structures providing device functions for a plurality of electric devices that are realized on the device wafer. Semiconductor structures realize a semiconductor element providing a semiconductor function in the semiconductor substrate. Electrically conducting connections providing e.g. ohmic contact between the semiconductor structures and functional device structures such that at least one semiconductor function is controlled by a functional device structure or that at least one device function of the functional device structures is controlled by the semiconductor structures.

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Номер записи: 53
29-04-2021 дата публикации

Stacked-Die Bulk Acoustic Wave Oscillator Package

Номер: US20210126585A1
Автор: Jackson Ricky A., Wachtler Kurt Peter
Принадлежит:

A stacked-die oscillator package includes an oscillator circuit die having inner bond pads, and outer bond pads, and a bulk acoustic wave (BAW) resonator die having a piezoelectric transducer with a first and second BAW bond pad on a same side coupled to a top and bottom electrode layer across a piezoelectric layer. A first metal bump is on the first BAW bond pad and a second metal bump is on the second BAW bond pad flip chip bonded to the inner bond pads of the oscillator circuit die. A polymer material is in a portion of a gap between the BAW and oscillator circuit die. 144-. (canceled)45. A stacked-die oscillator package , comprising:an oscillator circuit die having a first and a second bond pad;a bulk acoustic wave (BAW) resonator die flip chip bonded to the first and second bond pads of the oscillator circuit die; anda polymer material positioned in a portion of a gap between the BAW resonator die and the oscillator circuit die.46. The stacked-die oscillator package of claim 45 , wherein the bulk acoustic wave (BAW) resonator die comprises a piezoelectric transducer.47. The stacked-die oscillator package of claim 46 , further comprising a Bragg mirror above the piezoelectric transducer.48. The stacked-die oscillator package of claim 45 , wherein the first metal bump and the second metal bump comprise a copper post with a different metal cap thereon.49. The stacked-die oscillator package of claim 45 , wherein the polymer material comprises a polyimide.50. The stacked-die oscillator package of claim 45 , further comprising a low elastic modulus material positioned over the BAW resonator die for encapsulating the BAW resonator die.51. The stacked-die oscillator package of claim 50 , wherein the low elastic modulus material comprises silicone rubber.52. The stacked-die oscillator package of claim 45 , wherein the polymer material comprises a low elastic modulus material.53. The stacked-die oscillator package of claim 52 , wherein the polymer material also provides ...

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Номер записи: 54
13-05-2021 дата публикации

MULTIPLEXER, HIGH-FREQUENCY FRONT END CIRCUIT, AND COMMUNICATION DEVICE

Номер: US20210143797A1
Автор: NOSAKA Koji
Принадлежит:

A multiplexer () includes a plurality of filters connected to a common terminal (). The multiplexer () includes: a low-frequency filter (L) that is formed of at least one surface acoustic wave resonator arranged between the common terminal () and the input/output terminal () and has a first pass band; a high-frequency filter (H) that is connected between the common terminal () and the input/output terminal () and has a second pass band located at a higher frequency than the first pass band; and a capacitor (C) that is serially arranged in a connection path between the common terminal () and the low-frequency filter (L). The Q value of the capacitor (C) in the second pass band is higher than the Q value in the second pass band of a capacitance obtained by treating the at least one surface acoustic wave resonator of the low-frequency filter (L) as a capacitance. 1. A multiplexer comprising:a common terminal;a first input/output terminal, a first input terminal, or a first output terminal;a second input/output terminal, a second input terminal, or a second output terminal; anda plurality of filters connected to the common terminal, the plurality of filters including a first filter and a second filter, wherein:the first filter has a first pass band and is formed from at least one surface acoustic wave resonator connected between the common terminal and the first input/output terminal, the first input terminal, or the first output terminal,the second filter has a second pass band and is connected between the common terminal and the second input/output terminal, the second input terminal, or the second output terminal, andthe second pass band having a higher frequency than the first pass band.2. The multiplexer according to claim 1 , further comprising:a capacitor that is serially arranged on a path between the common terminal and the first filter,wherein a Q value of the capacitor in the second pass band is greater than a Q value of the at least one surface acoustic wave ...

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Номер записи: 55
16-04-2020 дата публикации

TECHNIQUES FOR MONOLITHIC CO-INTEGRATION OF POLYCRYSTALLINE THIN-FILM BULK ACOUSTIC RESONATOR DEVICES AND MONOCRYSTALLINE III-N SEMICONDUCTOR TRANSISTOR DEVICES

Номер: US20200119087A1
Автор: BLOCK Bruce A., DASGUPTA Sansaptak, FISCHER Paul B., GARDNER Sanaz K., Radosavljevic Marko, Then Han Wui
Принадлежит: Intel Corporation

Techniques are disclosed for monolithic co-integration of thin-film bulk acoustic resonator (TFBAR, also called FBAR) devices and III-N semiconductor transistor devices. In accordance with some embodiments, one or more TFBAR devices including a polycrystalline layer of a piezoelectric III-N semiconductor material may be formed alongside one or more III-N semiconductor transistor devices including a monocrystalline layer of III-N semiconductor material, over a commonly shared semiconductor substrate. In some embodiments, either (or both) the monocrystalline and the polycrystalline layers may include gallium nitride (GaN), for example. In accordance with some embodiments, the monocrystalline and polycrystalline layers may be formed simultaneously over the shared substrate, for instance, via an epitaxial or other suitable process. This simultaneous formation may simplify the overall fabrication process, realizing cost and time savings, at least in some instances. 1. An integrated circuit comprising:a substrate having a cavity therein;a transistor device over a first portion of the substrate and comprising a monocrystalline III-N semiconductor layer; anda resonator device over a second portion of the substrate such that the cavity extends under the resonator device, the resonator device comprising a polycrystalline piezoelectric III-N semiconductor layer.2. The integrated circuit of claim 1 , wherein the transistor device further comprises:a polarization layer over the monocrystalline III-N semiconductor layer;a gate dielectric layer over the polarization layer;a gate layer over the gate dielectric layer;a source portion over a first region of the monocrystalline III-N semiconductor layer, adjacent the polarization layer; anda drain portion over a second region of the monocrystalline III-N semiconductor layer, adjacent the polarization layer.3. The integrated circuit of claim 2 , wherein the polarization layer comprises either:{'sub': x', '1-x, 'aluminum indium nitride ...

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Номер записи: 56
25-08-2022 дата публикации

BULK ACOUSTIC WAVE RESONATOR STACKED ONTO AN INTEGRATED PASSIVE DEVICE

Номер: US20220271736A1
Автор: Galipeau Jeffery D., Lear Kelly M.
Принадлежит:

Disclosed is a Bulk Acoustic Wave (BAW) assist filter structure with a BAW resonator stacked onto an integrated passive device (IPD). In exemplary aspects disclosed herein, the BAW filter structure includes a transducer with electrodes and a piezoelectric layer between the electrodes. The IPD is electrically coupled to the BAW resonator and provides a high frequency of operation. In such a configuration, the BAW assist filter structure has a low insertion loss and mitigates electrical length parasitic loss due to the close electrically proximity of the BAW resonator stacked onto the IPD. Further, the BAW assist filter structure is able to filter high frequencies and provides improved filter performance and greater flexibility in design of a filter transfer function. 1. A bulk acoustic wave (BAW) assist filter structure , comprising:at least one integrated passive device (IPD) including an electrical circuit; a substrate;', a first electrode;', 'a second electrode; and', 'a piezoelectric layer between the first electrode and the second electrode and wherein the electrical circuit of the at least one IPD is electrically coupled to the BAW resonator., 'at least one transducer over the substrate, the at least one transducer comprising], 'at least one BAW resonator over the IPD and comprising2. The BAW assist filter structure of claim 1 , wherein the at least one IPD comprises a glass IPD.3. The BAW assist filter structure of claim 1 , wherein the at least one IPD comprises an elliptic filter.4. The BAW assist filter structure of claim 1 , wherein the at least one IPD comprises at least one of a high-pass filter or a low-pass filter.5. The BAW assist filter structure of claim 1 , wherein the IPD comprises a series capacitor.6. The BAW assist filter structure of claim 1 , wherein the IPD comprises a shunt LC tank circuit.7. The BAW assist filter structure of claim 1 , wherein the IPD comprises a series capacitor and a shunt LC tank circuit.8. The BAW assist filter ...

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Номер записи: 57
16-04-2020 дата публикации

ACOUSTIC WAVE DEVICE, FRONT-END CIRCUIT, AND COMMUNICATION APPARATUS

Номер: US20200119712A1
Автор: IDA Yasuyuki, MATSUMOTO Katsuya
Принадлежит:

An acoustic wave device includes a functional electrode provided on a first main surface of an element substrate, extended wiring lines that are electrically connected to the functional electrode and that are adjacent to each other on a second main surface facing away from the first main surface, external terminals that are connected to the extended wiring lines, respectively, and that are provided on the second main surface, a first resin portion that seals the acoustic wave device, and a second resin portion that is provided at a position which is between the element substrate and the first resin portion and which is on the second main surface. 1. An acoustic wave device comprising:an element substrate that includes a first main surface and a second main surface facing away from each other and that at least partially has piezoelectricity;a functional electrode that is provided directly or indirectly on the first main surface of the element substrate;a first extended wiring line and a second extended wiring line that are provided directly or indirectly on the second main surface of the element substrate, that are electrically connected to the functional electrode, and that are adjacent to each other;a first external terminal that is electrically connected to the first extended wiring line and that is provided directly or indirectly on the second main surface of the element substrate;a second external terminal that is electrically connected to the second extended wiring line and that is provided directly or indirectly on the second main surface of the element substrate;a first resin portion that seals the acoustic wave device; anda second resin portion that is provided at least at a position which is between the element substrate and the first resin portion and which is on the second main surface; whereinthe second resin portion has a lower Young's modulus than the first resin portion;the first resin portion and the second resin portion are in contact with each ...

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Номер записи: 58
11-05-2017 дата публикации

Acoustic wave device structure, integrated structure of power amplifier and acoustic wave device

Номер: US20170134000A1
Автор: CHIN Yung-Chung, Liao Pei-Chun, LIN Cheng-Kuo, Lin Re Ching, TSAI Shu-Hsiao
Принадлежит:

An integrated structure of power amplifier and acoustic wave device comprises: a compound semiconductor epitaxial substrate, a power amplifier upper structure formed on a first side of said compound semiconductor epitaxial substrate, and a film bulk acoustic resonator formed on a second side of said compound semiconductor epitaxial substrate; wherein forming an epitaxial structure on a compound semiconductor substrate to form said compound semiconductor epitaxial substrate; wherein said first side of said compound semiconductor epitaxial substrate and said power amplifier upper structure form a power amplifier; said second side of said compound semiconductor epitaxial substrate and said film bulk acoustic resonator form an acoustic wave device; the integrated structure of power amplifier and acoustic wave device on the same compound semiconductor epitaxial substrate is capable of reducing the component size, optimizing the impedance matching, and reducing the signal loss between power amplifier and acoustic wave device. 1. An integrated structure of power amplifier and acoustic wave device , comprising:a compound semiconductor epitaxial substrate including a compound semiconductor substrate and an epitaxial structure formed on said compound semiconductor substrate;a power amplifier upper structure formed on a first side of said compound semiconductor epitaxial substrate, wherein said first side of said compound semiconductor epitaxial substrate and said power amplifier upper structure form a power amplifier; anda film bulk acoustic resonator formed on a second side of said compound semiconductor epitaxial substrate, wherein said second side of said compound semiconductor epitaxial substrate and said film bulk acoustic resonator form an acoustic wave device;wherein, the integrated structure of said power amplifier and said acoustic wave device on the same said compound semiconductor epitaxial substrate is capable of reducing the component size, optimizing the ...

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Номер записи: 59
23-04-2020 дата публикации

ACOUSTIC WAVE DEVICE, FRONT-END CIRCUIT, AND COMMUNICATION APPARATUS

Номер: US20200127635A1
Автор: IDA Yasuyuki, MATSUMOTO Katsuya
Принадлежит:

An acoustic wave device includes an element substrate having piezoelectricity, a functional electrode on a first main surface of the element substrate, an extended wiring line electrically connected to the functional electrode and extending from the first main surface to a side surface of the element substrate, an external terminal electrically connected to the extended wiring line and on a second main surface of the element substrate, a first resin portion to seal the acoustic wave device, and a second resin portion at least between the extended wiring line on the side surface and the first resin portion. The second resin portion has a lower Young's modulus than the first resin portion. 1. An acoustic wave device comprising:an element substrate that includes a first main surface and a second main surface facing away from each other and a side surface connecting the first main surface and the second main surface to each other and that has piezoelectricity at least partially;a functional electrode that is provided on the first main surface of the element substrate;an extended wiring line that is electrically connected to the functional electrode and that extends from the first main surface to the side surface of the element substrate;an external terminal that is electrically connected to the extended wiring line and that is provided directly or indirectly on the second main surface of the element substrate;a first resin portion that seals the acoustic wave device; anda second resin portion that is provided at least between the extended wiring line provided on the side surface and the first resin portion; whereinthe second resin portion has a lower Young's modulus than the first resin portion.2. The acoustic wave device according to claim 1 , further comprising a third resin portion claim 1 , whereinthe element substrate includes a first corner portion that is a portion at which the second main surface adjoins the side surface;the extended wiring line extends from the ...

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Номер записи: 60
09-05-2019 дата публикации

CO-INTEGRATED BULK ACOUSTIC WAVE RESONATORS

Номер: US20190140621A1
Автор: Edrees Hassan, Kinget Peter, Kymissis Ioannis
Принадлежит:

An electrical circuit assembly can include a semiconductor integrated circuit, such as fabricated including CMOS devices. A first lateral-mode resonator can be fabricated upon a surface of the semiconductor integrated circuit, such as including a deposited acoustic energy storage layer including a semiconductor material, a deposited piezoelectric layer acoustically coupled to the deposited acoustic energy storage layer, and a first conductive region electrically coupled to the deposited piezoelectric layer and electrically coupled to the semiconductor integrated circuit. The semiconductor integrated circuit can include one or more transistor structures, such as fabricated prior to fabrication of the lateral-mode resonator. Fabrication of the lateral-mode resonator can include low-temperature processing specified to avoid disrupting operational characteristics of the transistor structures. 1. An electrical circuit assembly , comprising:a semiconductor integrated circuit comprising one or more transistor structures; anda first lateral-mode resonator fabricated upon a surface of a semiconductor integrated circuit, the first lateral-mode resonator comprising:an acoustic energy storage layer;a piezoelectric layer acoustically coupled to the acoustic energy storage layer; anda first conductive region electrically coupled to the piezoelectric layer and electrically coupled to the semiconductor integrated circuit.2. The electrical circuit assembly of claim 1 , comprising a first functionalized layer located upon the first lateral-mode resonator claim 1 , the first functionalized layer configured to interact with a first species in proximity to the first lateral-mode resonator in a manner altering a mass of the first lateral-mode resonator in a presence of the first species.3. The electrical circuit assembly of claim 2 , comprising an array of lateral-mode resonators;wherein the first lateral-mode resonator is included amongst other lateral-mode resonators comprising the ...

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Номер записи: 61
15-09-2022 дата публикации

Vibrator and oscillator

Номер: US20220294392A1
Автор: Atsushi Matsuo, Ryuta NISHIZAWA
Принадлежит: Seiko Epson Corp

A vibrator includes: a vibration element that includes a pair of first excitation electrodes formed at the first vibration portion, a pair of second excitation electrodes formed at the second vibration portion, and a pair of third excitation electrodes formed at the third vibration portion, in which one second excitation electrode of the pair of second excitation electrodes is formed at a first inclined surface that is inclined with respect to two main surfaces, and one third excitation electrode of the pair of third excitation electrodes is formed at a second inclined surface that is inclined with respect to the two main surfaces and the first inclined surface; and a package that houses the vibration element. The vibration element includes a fixing portion to be fixed to the package. The fixing portion is provided between the first vibration portion and the second and third vibration portions.

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Номер записи: 62
07-06-2018 дата публикации

Electronic component and method of manufacturing the same

Номер: US20180159504A1
Автор: Yasuyuki Oda
Принадлежит: TAIYO YUDEN CO LTD

An electronic component includes: a substrate; a device chip, in which a functional element is located on a lower surface thereof, that is mounted on an upper surface of the substrate so that the functional element and the upper surface of the substrate are opposite to each other via an air gap; a ring-shaped metal layer that is located on the upper surface of the substrate, surrounds the device chip in a plan view, and has a protruding part located along an outer periphery thereof, an outer side surface of the ring-shaped metal layer being higher than an inner side surface thereof; a metal sealer that surrounds the device chip in the plan view, and is bonded on an upper surface of the ring-shaped metal layer; and a metal film that is located on side surfaces of the metal sealer and the ring-shaped metal layer.

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Номер записи: 63
23-05-2019 дата публикации

METHOD OF MANUFACTURING INTEGRATED CIRCUIT CONFIGURED WITH TWO OR MORE SINGLE CRYSTAL ACOUSTIC RESONATOR DEVICES

Номер: US20190158058A1
Автор: SHEALY Jeffrey B.
Принадлежит:

A method of fabricating a configurable single crystal acoustic resonator (SCAR) device integrated circuit. The method includes providing a bulk substrate structure having first and second recessed regions with a support member disposed in between. A thickness of single crystal piezo material is formed overlying the bulk substrate with an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region. A first electrode with a first terminal is formed overlying an upper portion of the piezo material, while a second electrode with a second terminal is formed overlying a lower portion of the piezo material. An acoustic reflector structure and a dielectric layer are formed overlying the resulting bulk structure. The resulting device includes a plurality of single crystal acoustic resonator devices, numbered from (R) to (RN), where N is an integer greater than 1. 11. A method for fabricating a monolithic filter ladder network , the monolithic filter ladder network comprising a plurality of crystalline acoustic resonator devices , numbered from R to RN , where N is an integer greater than 1 , configured on a common substrate member , the method comprising:providing a bulk substrate structure, having a surface region, and a thickness of material, the bulk substrate structure having a first recessed region and a second recessed region, and a support member disposed between the first recessed region and the second recessed region;forming a thickness of crystalline material overlying the surface region, the thickness of crystalline piezo material having an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region;forming a first electrode member overlying an upper portion of the thickness of crystalline piezo material;forming a second electrode member overlying a lower portion of the thickness of crystalline piezo material to sandwich the ...

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Номер записи: 64
14-05-2020 дата публикации

Stacked-Die Bulk Acoustic Wave Oscillator Package

Номер: US20200153387A1
Автор: Jackson Ricky A., Wachtler Kurt Peter
Принадлежит:

A stacked-die oscillator package includes an oscillator circuit die having inner bond pads, and outer bond pads, and a bulk acoustic wave (BAW) resonator die having a piezoelectric transducer with a first and second BAW bond pad on a same side coupled to a top and bottom electrode layer across a piezoelectric layer. A first metal bump is on the first BAW bond pad and a second metal bump is on the second BAW bond pad flip chip bonded to the inner bond pads of the oscillator circuit die. A polymer material is in a portion of a gap between the BAW and oscillator circuit die. 120-. (canceled)21. A stacked-die oscillator package , comprising:an oscillator circuit die having a first and a second bond pad;a bulk acoustic wave (BAW) resonator die comprising a first BAW bond pad and a second BAW bond pad, a first metal bump on the first BAW bond pad and a second metal bump on the second BAW bond pad flip chip bonded to the first and second bond pads of the oscillator circuit die; anda polymer material positioned in a portion of a gap between the BAW resonator die and the oscillator circuit die.22. The stacked-die oscillator package of claim 21 , wherein the bulk acoustic wave (BAW) resonator die comprises a piezoelectric transducer.23. The stacked-die oscillator package of claim 22 , further comprising a Bragg mirror above the piezoelectric transducer.24. The stacked-die oscillator package of claim 21 , wherein the first metal bump and the second metal bump comprise a copper post with a different metal cap thereon.25. The stacked-die oscillator package of claim 21 , wherein the polymer material comprises a polyimide.26. The stacked-die oscillator package of claim 21 , further comprising a low elastic modulus material positioned over the BAW resonator die for encapsulating the BAW resonator die.27. The stacked-die oscillator package of claim 26 , wherein the low elastic modulus material comprises silicone rubber.28. The stacked-die oscillator package of claim 21 , wherein the ...

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Номер записи: 65
11-09-2014 дата публикации

Acoustic wave device

Номер: US20140252916A1
Автор: Alan S. Chen, Charles E. Carpenter, George Grama, Ian Yee, Jean Briot, Kurt Steiner, Suzanne Combe
Принадлежит: Triquint Semiconductor Inc

Embodiments described herein may provide an acoustic wave device, a method of fabricating an acoustic wave device, and a system incorporating an acoustic wave device. The acoustic wave device may include a transducer disposed on a substrate, with a contact coupled with the transducer. The acoustic wave device may further include a wall layer and cap that define an enclosed opening around the transducer. A via may be disposed through the cap and wall layer over the contact, and a top metal may be disposed in the via. The top metal may form a pillar in the via and a pad on the cap above the via. The pillar may provide an electrical connection between the pad and the contact. In some embodiments, the acoustic wave device may be formed as a wafer-level package on a substrate wafer.

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Номер записи: 66
30-05-2019 дата публикации

Oscillator, electronic apparatus, and vehicle

Номер: US20190165732A1
Автор: Hisahiro Ito, Shoichiro Kasahara, Tetsuya Otsuki
Принадлежит: Seiko Epson Corp

An oscillator includes a resonator and an integrated circuit element. The resonator includes a resonator element and a resonator element container accommodating the resonator element. The integrated circuit element includes an inductor. The resonator and the integrated circuit element are stacked on each other. The resonator includes a metal member, and the metal member does not overlap the inductor when viewed in a plan view.

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Номер записи: 67
28-05-2020 дата публикации

Electronic component module, and manufacturing method for electronic component module

Номер: US20200168520A1
Автор: Takashi Iwamoto
Принадлежит: Murata Manufacturing Co Ltd

An electronic component module includes an electronic component, a resin structure, a wiring portion, and a shield portion. The resin structure covers a second main surface and at least a portion of a side surface of the electronic component. The wiring portion is electrically connected to the electronic component. The shield portion includes a first conductor layer and a second conductor layer. The first conductor layer is spaced away from the electronic component between the electronic component and the resin structure, and has electrical conductivity. The second conductor layer is spaced away from the wiring portion between the wiring portion and the resin structure, and has electrical conductivity. In the shield portion, the first conductor layer and the second conductor layer are integrated.

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Номер записи: 68
13-06-2019 дата публикации

System and method for a radio frequency filter

Номер: US20190181825A1
Автор: Hans-Joerg Timme, Peter Pfann, Ruediger Bauder, Stefan Helmut Schmalzl
Принадлежит: INFINEON TECHNOLOGIES AG

In accordance with an embodiment, an RF system includes a transmit path having a first tunable transmit band stop filter, and a power amplifier coupled to an output of the first tunable transmit band stop filter, where the first tunable transmit band stop filter is configured reject a receive frequency and pass a transmit frequency; a receive path comprising an LNA; and a duplex filter having a transmit path port coupled to an output of the power amplifier, a receive path port coupled to an input of the LNA, and an antenna port, where the duplex filter is configured to pass the transmit frequency and reject the receive frequency between the antenna port and the transmit path port, pass the receive frequency and reject the transmit frequency between the antenna port and the receive path port.

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Номер записи: 69
13-06-2019 дата публикации

Tunable Resonator Element, Filter Circuit and Method

Номер: US20190181827A1
Автор: Hans-Joerg Timme, Ruediger Bauder
Принадлежит: INFINEON TECHNOLOGIES AG

A resonator element for use in a filter is provided. The resonator element includes a first resonator acoustically coupled to a second or third resonator or both. The first resonator has terminals for incorporation in a filter structure. A tuning circuit is coupled to the second or third resonator or both to enable tuning of the resonator element. The tuning circuit includes a variable capacitor and an inductor.

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Номер записи: 70
04-06-2020 дата публикации

BULK-ACOUSTIC RESONATOR MODULE

Номер: US20200177155A1
Автор: Jung Jae Hyun, LEE Jae Chang, Lee Tae Kyung, NA Seong Hun, Park Seung Wook
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

A bulk-acoustic resonator module includes: a module substrate; a bulk-acoustic resonator connected to the module substrate by a connection terminal and disposed spaced apart from the module substrate; and a sealing portion sealing the bulk-acoustic resonator. The bulk-acoustic resonator includes a resonating portion disposed opposite to an upper surface of the module substrate. A space is disposed between the resonating portion and the upper surface of the module substrate. 1. A bulk-acoustic resonator module , comprising:a module substrate;a bulk-acoustic resonator connected to the module substrate by a connection terminal and disposed spaced apart from the module substrate; anda sealing portion sealing the bulk-acoustic resonator,wherein the bulk-acoustic resonator comprises a resonating portion disposed opposite to an upper surface of the module substrate, and a space is disposed between the resonating portion and the upper surface of the module substrate.2. The bulk-acoustic resonator module of claim 1 , wherein the bulk-acoustic resonator further comprises:a resonator substrate;an insulating layer disposed on a surface of the resonator substrate;a membrane layer forming a cavity together with the insulating layer, the resonating portion being disposed on the cavity, and comprising a first electrode, a piezoelectric layer, and a second electrode arranged in a stacked configuration;a protective layer disposed on the first electrode, the piezoelectric layer, and the second electrode in the resonating portion; anda hydrophobic layer disposed on the protective layer.3. The bulk-acoustic resonator module of claim 2 , wherein the hydrophobic layer has a contact angle of 90° or more with water.4. The bulk-acoustic resonator module of claim 2 , wherein the hydrophobic layer comprises either one or both of fluorine (F) and silicon (Si).5. The bulk-acoustic resonator module of claim 2 , wherein the hydrophobic layer surrounds the cavity and the membrane layer.6. The bulk- ...

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Номер записи: 71
05-07-2018 дата публикации

Electronic component, electronic apparatus, and moving object

Номер: US20180191300A1
Автор: Kensaku ISOHATA
Принадлежит: Seiko Epson Corp

An oscillator including a container, a first protrusion portion protruding from the container along a first direction, a second protrusion portion protruding from the container along the first direction, and a projection portion protruding from the container along the first direction. The second protrusion portion is shorter than the first protrusion portion in the first direction, and the projection portion is longer than the second protrusion portion and shorter than the first protrusion portion in the first direction.

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Номер записи: 72
05-07-2018 дата публикации

Piezoelectric resonator device

Номер: US20180191303A1
Автор: Takuya Kojo
Принадлежит: Daishinku Corp

A piezoelectric resonator device having a sandwich structure is provided, which can be easily adapted to reduction in size. A crystal oscillator 101 includes: a crystal resonator plate 2; a first sealing member 3 covering a first excitation electrode 221 of the crystal resonator plate 2; and a second sealing member 4 covering a second excitation electrode 222 of the crystal resonator plate 2. A substantially rectangular parallelepiped shaped package 12 is formed by bonding: the first sealing member 3 to the crystal resonator plate 2; and the second sealing member 4 to the crystal resonator plate 2. The package 12 includes an internal space 13 in which is hermetically sealed a vibrating part 23 of the crystal resonator plate 2 including the first excitation electrode 221 and the second excitation electrode 222. A bowling material 11 hermetically sealing the vibrating part 23 of the crystal resonator plate 2 is formed to have an annular shape in plan view, and is disposed along an outer peripheral edge of the package 12 excluding four corners thereof.

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Номер записи: 73
20-06-2019 дата публикации

Acoustically coupled resonator notch and bandpass filters

Номер: US20190190490A1
Автор: Andreas Bogner, Hans-Joerg Timme, Ruediger Bauder
Принадлежит: INFINEON TECHNOLOGIES AG

A notch filter includes an inductor coupled between an input node and an output node, and a dual-resonator structure coupled between the input node, the output node, and ground.

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Номер записи: 74
14-07-2016 дата публикации

Vibration element manufacturing method, vibration element, electronic device, electronic apparatus, and moving object

Номер: US20160204334A1
Автор: Atsushi Matsuo, Takatoshi Sugiyama, Toshihiro Il, Yohei Yamada
Принадлежит: Seiko Epson Corp

A method of manufacturing a gyro element as a vibration element is a manufacturing method of processing a quartz crystal substrate to form an outward shape of a gyro element including a vibrating arm and form recessed portions in a vibrating arm. The method includes forming the outward shape of a gyro element from one surface of the quartz crystal substrate using dry etching and forming the recessed portions using wet etching.

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Номер записи: 75
16-10-2014 дата публикации

Circuit substrate, electronic device, method of manufacturing electronic device, electronic apparatus, and moving object

Номер: US20140305687A1
Автор: Juichiro Matsuzawa, Masaru Mikami, Toshiya Usuda
Принадлежит: Seiko Epson Corp

A circuit substrate includes a base substrate provided with a first pad and a second pad which are electrically connected to an electronic component, a first lateral face and a second lateral face, a first terminal electrically connected to the first pad and a second terminal electrically connected to the second pad which are disposed on the first lateral face, and a third terminal and a fourth terminal which are disposed on the second lateral face. The first terminal and the fourth terminal are located at point-symmetric positions to a center of the base substrate. The second terminal and the third terminal are located at point-symmetric positions to the center of the base substrate. The third terminal and the fourth terminal are electrically connected to each other.

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Номер записи: 76
16-10-2014 дата публикации

Electronic component, electronic apparatus, and moving object

Номер: US20140306582A1
Автор: Juichiro Matsuzawa, Masaru Mikami, Toshiya Usuda
Принадлежит: Seiko Epson Corp

An oscillator as an electronic component includes external connection terminals as terminals disposed on a reverse side of a substrate constituting a package, and connection electrodes connected respectively to the external connection terminals, and penetrating through the substrate, and the center of the connection electrode as a second connection electrode in the three connection electrodes adjacent to each other is disposed at a position out of an imaginary line passing through the center of the connection electrode as a first connection electrode and the center of the connection electrode as a third connection electrode.

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Номер записи: 77
25-06-2020 дата публикации

HIGH-FREQUENCY MODULE

Номер: US20200204159A1
Автор: ONODERA Syuichi, Watanabe Takashi
Принадлежит:

A high-frequency module includes a substrate having a mounting surface, a laminated component disposed on the mounting surface, and a wiring, in which the laminated component includes a lower stage component, and an upper stage component disposed on the lower stage component, the lower stage component includes a lower surface facing the mounting surface, an upper surface facing the lower surface back to back, and a connection terminal provided on the lower surface the upper stage component includes a lower surface facing the upper surface, and a connection terminal provided on the lower surface and the wiring is provided on the upper surface, and is connected with the connection terminal 1. A high-frequency-module comprising:a substrate having a first mounting surface;a first laminated component disposed on the first mounting surface; anda first wiring, a first component, and', 'a second component disposed on the first component,, 'wherein the first laminated component includes'} a first surface facing the first mounting surface,', 'a second surface facing the first surface back to back, and', 'a first connection terminal provided on the first surface,, 'the first component includes'} a third surface facing the second surface, and', 'a second connection terminal provided on the third surface, and, 'the second component includes'}the first wiring is provided on the second surface and is connected to the second connection terminal.2. The high-frequency module according to claim 1 ,wherein the first wiring is connected by wire bonding to the first mounting surface or a component different from the first component and the second component provided on the first mounting surface.3. The high-frequency module according to claim 1 ,wherein the first component includes a first acoustic wave filter having a first terminal,the second component includes a second acoustic wave filter having a second terminal, andthe first terminal is an input terminal or an output terminal of the ...

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Номер записи: 78
05-08-2021 дата публикации

Vibrator element and vibrator device

Номер: US20210242856A1
Автор: Masashi SHIMURA, Osamu Kawauchi, Shogo Sasaki
Принадлежит: Seiko Epson Corp

The vibrator element includes a base part, a vibrating arm extending from the base part, and a weight provided to the vibrating arm, wherein the weight includes a thick film part, a thin film part thinner in film thickness than the thick film part, and a connection part which is located between the thick film part and the thin film part to connect the thick film part and the thin film part to each other, and which forms a taper shape gradually decreasing in film thickness in a direction from the thick film part side toward the thin film part.

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Номер записи: 79
11-07-2019 дата публикации

ELECTRONIC COMPONENT

Номер: US20190214963A1
Автор: SHIN Yasuaki
Принадлежит:

An electronic component includes a package substrate extending in a longitudinal direction, and chip components disposed along the longitudinal direction of the package substrate and each connected to the package substrate by a bump. A height of a bump connecting at least one chip component disposed at an end portion in the longitudinal direction among the chip components and the package substrate is greater than a height of a bump connecting at least one chip component disposed inward relative to the end portion in the longitudinal direction among the chip components and the package substrate. 1. An electronic component comprising:a package substrate extending in a longitudinal direction; anda plurality of chip components disposed along the longitudinal direction of the package substrate and each connected to the package substrate by a bump; whereina height of a bump connecting at least one chip component disposed at an end portion in the longitudinal direction of the package substrate among the plurality of chip components and the package substrate is greater than a height of a bump connecting at least one chip component disposed inward relative to the end portion in the longitudinal direction of the package substrate among the plurality of chip components and the package substrate.2. The electronic component according to claim 1 , wherein the bump connecting the at least one chip component disposed at the end portion in the longitudinal direction of the package substrate and the package substrate is a solder bump.3. The electronic component according to claim 1 , wherein the bump connecting the at least one chip component disposed inward relative to the end portion in the longitudinal direction of the package substrate and the package substrate is a gold bump.4. The electronic component according to claim 1 , wherein the chip component is a SAW chip.5. The electronic component according to claim 1 , wherein the package substrate is an alumina substrate.6. The ...

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Номер записи: 80
02-07-2020 дата публикации

VIBRATION DEVICE, ELECTRONIC APPARATUS AND VEHICLE

Номер: US20200212874A1
Автор: MIZUGAKI Koichi
Принадлежит: SEIKO EPSON CORPORATION

A vibration device includes a first substrate that includes a first surface and a second surface; a second substrate that includes a third surface and a fourth surface; an intermediate substrate that is disposed between the first substrate and the second substrate and that includes a vibration element, a frame surrounding the vibration element, and a coupler linking the vibration element and the frame; a conductive first joining member that is located between the frame and the first substrate and that joins the frame and the second surface; a conductive second joining member that is located between the frame and the second substrate and that joins the frame and the third surface; an internal electrode disposed on the first substrate; and a first conductive member that is disposed between the first substrate and the intermediate substrate and that electrically couples the vibration element and the internal electrode. 1. A vibration device comprising:a first substrate that includes a first surface and a second surface opposite to the first surface;a second substrate that includes a third surface and a fourth surface opposite to the third surface;an intermediate substrate that is disposed between the first substrate and the second substrate and that includes a vibration element, a frame surrounding the vibration element, and a coupler linking the vibration element and the frame;a conductive first joining member that is located between the frame and the first substrate and that joins the frame and the second surface;a conductive second joining member that is located between the frame and the second substrate and that joins the frame and the third surface;an internal electrode disposed on the first substrate; anda first conductive member that is disposed between the first substrate and the intermediate substrate and that electrically couples the vibration element and the internal electrode.2. The vibration device according to claim 1 , whereina coupling surface of the ...

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Номер записи: 81
18-07-2019 дата публикации

MICROFABRICATED DEVICE WITH PIEZOELECTRIC SUBSTRATE AND METHOD OF MANUFACTURE

Номер: US20190221607A1
Автор: Gudeman Christopher S.
Принадлежит: Innovative Micro Technology

Systems and methods for forming an electrostatic MEMS plate switch include forming a deformable plate on a first substrate, forming the electrical contacts on a second piezoelectric substrate, and coupling the two substrates using a hermetic seal. The deformable plate may have at least one shunt bar located at a nodal line of a vibrational mode of the deformable plate, so that the shunt bar remains relatively stationary when the plate is vibrating in that vibrational mode. The second piezoelectric substrate may include lithium tantalate (LiTaO3) or lithium niobate (LiNiO3) or lead zirconate titanate (Pb[Zr(x)Ti(1−x)]O3), or integrated circuits formed thereon. 1. A microfabricated structure , comprising:a first silicon substrate bonded to a second substrate with an adhesive bond;wherein the silicon substrate and second substrate define a device cavity formed therebetween; andat least one device microfabricated on at least one of the MEMS silicon substrate and second substrate and disposed in the device cavity, wherein the second substrate also comprises a piezoelectric substrate material.2. The microfabricated structure of claim 1 , wherein the second substrate is a second silicon composite substrate claim 1 , comprising a layer of supporting silicon material and at least one of a lithium niobate layer (LiNbO) claim 1 , a lithium tantalite (LiTaO) layer claim 1 , and a lead zirconate titanate (PZT) layer bonded to the supporting silicon material.3. The microfabricated structure of claim 2 , further comprising:at least one through wafer via formed on at least one of the first silicon substrate and the second silicon composite substrate, wherein the through wafer via allows electrical access to the at least one MEMS device from an exterior of the device cavity.4. The microfabricated structure of claim 2 , wherein the adhesive bond comprises a hermetic adhesive that bonds the second silicon composite substrate to the first silicon substrate.5. The microfabricated ...

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Номер записи: 82
18-07-2019 дата публикации

QUARTZ CRYSTAL UNIT, QUARTZ CRYSTAL OSCILLATOR AND ELECTRONIC APPARATUS

Номер: US20190222174A1
Автор: KAWASHIMA Hirofumi
Принадлежит:

In a quartz crystal unit, the unit comprising a quartz crystal resonator having a base portion, and first and second tuning fork arms connected to the base portion, the base portion having a length less than 0.5 mm and greater than a spaced-apart distance between the first and second tuning fork arms, each of the first and second tuning fork arms having a width less than 0.1 mm and a length less than 1.56 mm, and a plurality of different widths including a first width and a second width greater than the first width, at least one groove being formed in at least one of opposite main surfaces of each of the first and second tuning fork arms so that a length of the at least one groove is within a range of 0.3 mm to 0.79 mm, the quartz crystal resonator being housed in a case, and a lid being connected to the case. 1. A quartz crystal unit comprising: a case; a lid; and a quartz crystal resonator having a base portion , and first and second tuning fork arms connected to the base portion , the base portion having a length less than 0.5 mm and greater than a spaced-apart distance between the first tuning fork arm and the second tuning fork arm , each of the first and second tuning fork arms having a width less than 0.1 mm and a length less than 1.56 mm , and a plurality of different widths including a first width and a second width greater than the first width , and opposite main surfaces , at least one groove being formed in at least one of the opposite main surfaces of each of the first and second tuning fork arms so that a length of the at least one groove formed in the at least one of the opposite main surfaces of each of the first and second tuning fork arms is within a range of 0.3 mm to 0.79 mm , the quartz crystal resonator being housed in the case , and the lid being connected to the case.2. A quartz crystal unit according to ; wherein each of the first and second tuning fork arms comprises a first vibrational portion having the first width and a second ...

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Номер записи: 83
09-07-2020 дата публикации

MULTIPLEXER, HIGH-FREQUENCY FRONT END CIRCUIT, AND COMMUNICATION DEVICE

Номер: US20200220523A1
Автор: NOSAKA Koji
Принадлежит:

A multiplexer () includes a plurality of filters connected to a common terminal (). The multiplexer () includes: a low-frequency filter (L) that is formed of at least one surface acoustic wave resonator arranged between the common terminal () and the input/output terminal () and has a first pass band; a high-frequency filter (H) that is connected between the common terminal () and the input/output terminal () and has a second pass band located at a higher frequency than the first pass band; and a capacitor (C) that is serially arranged in a connection path between the common terminal () and the low-frequency filter (L). The Q value of the capacitor (C) in the second pass band is higher than the Q value in the second pass band of a capacitance obtained by treating the at least one surface acoustic wave resonator of the low-frequency filter (L) as a capacitance. 1. A multiplexer comprising:a common terminal;a first input/output terminal;a second input/output terminal; the first filter has a first pass band and is formed from at least one surface acoustic wave resonator arranged between the common terminal and the first input/output terminal, and', 'the second filter has a second pass band and is connected between the common terminal and the second input/output terminal, the second pass band having a higher frequency than the first pass band; and, 'a plurality of filters connected to the common terminal, the plurality of filters including a first filter and a second filter, whereina capacitor that is serially arranged on a path between the common terminal and the first filter and that is configured to compensate for bulk wave radiation loss of the at least one surface acoustic wave resonator in the second pass band.2. The multiplexer according to claim 1 , wherein:the first filter comprises a substrate having a piezoelectric property and on which an interdigital transducer (IDT) electrode constituting the at least one surface acoustic wave resonator is formed,the ...

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Номер записи: 84
19-08-2021 дата публикации

SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD OF MANUFACTURING THE SAME

Номер: US20210257988A1
Автор: Huang Ching-Han, LAI Kuo-Hua, Lai Lu-Ming, LIU Hui-Chung, TSENG Chi Sheng
Принадлежит: ADVANCED SEMICONDUCTOR ENGINEERING, INC.

The present disclosure provides a semiconductor package structure. The semiconductor package structure includes a substrate, a first electronic component and a support component. The first electronic component is disposed on the substrate. The first electronic component has a backside surface facing a first surface of the substrate. The support component is disposed between the backside surface of the first electronic component and the first surface of the substrate. The backside surface of the first electronic component has a first portion connected to the support component and a second portion exposed from the support component. 1. A semiconductor package structure , comprising:a substrate;a first electronic component disposed on the substrate, the first electronic component having a backside surface facing a first surface of the substrate; anda support component disposed between the backside surface of the first electronic component and the first surface of the substrate,wherein the backside surface of the first electronic component has a first portion connected to the support component and a second portion exposed from the support component.2. The semiconductor package structure of claim 1 , further comprising a plurality of support components disposed between the backside surface of the first electronic component and the first surface of the substrate claim 1 , wherein the support components are separated from each other.3. The semiconductor package structure of claim 1 , wherein an area of the first portion of the backside surface of the first electronic component is about 3% to about 50% of an area of the backside surface of the first electronic component.4. The semiconductor package structure of claim 1 , wherein the support component claim 1 , the first electronic component and the substrate defining a cavity claim 1 , a thermal conductivity of the cavity is less than a thermal conductivity of the support component.5. The semiconductor package structure of ...

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Номер записи: 85
19-08-2021 дата публикации

WIDEBAND FILTER WITH RESONATORS AND INDUCTORS

Номер: US20210257989A1
Автор: Kim Jonghae, Liu Kai, Tang Rui, Velez Mario Francisco, Yun Changhan Hobie
Принадлежит:

Aspects of the disclosure are directed to a bandpass filter including a first, second, third and fourth resonators, wherein the second and third resonators are in parallel, wherein the first resonator includes a first and second terminals, wherein the second resonator includes a second resonator top terminal and a second resonator bottom terminal, wherein the third resonator includes a third resonator top terminal and a third resonator bottom terminal, wherein the fourth resonator includes a third terminal and a fourth terminal; wherein the first terminal is coupled to the second resonator top terminal, wherein the second terminal is coupled to the third resonator top terminal, wherein the third terminal is coupled to the third resonator bottom terminal, wherein the fourth terminal is coupled to the second resonator bottom terminal; a first inductor coupled to the first and third terminals; and a second inductor coupled to the second and fourth terminals. 1. A method for forming one or more individual bandpass filters on an integrated circuit (IC) , the method comprising:positioning a first redistribution layer (RDL) in a wafer layer on the integrated circuit (IC);placing one or more vertical conductive pillars above the wafer layer;forming a plurality of inductors by coating a first passivation layer onto the wafer layer;plating a second redistribution layer (RDL) over the first passivation layer; andcoating a second passivation layer above the second redistribution layer (RDL).2. The method of claim 1 , wherein the wafer layer is a molded wafer layer.3. The method of claim 1 , wherein the one or more vertical conductive pillars are either copper (Cu) pillars or aluminum (Al) pillars.4. The method of claim 1 , wherein the wafer layer is a high-resistivity silicon (HRS) wafer claim 1 , a gallium arsenide (GaAs) wafer or a glass wafer.5. The method of claim 1 , further comprising assembling a plurality of resonator chips onto the wafer layer.6. The method of claim 5 ...

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Номер записи: 86
27-08-2015 дата публикации

Tunable filter structures and design structures

Номер: US20150244345A1
Автор: Anthony K. Stamper, James W. Adkisson, Mark D. Jaffe, Panglijen Candra, Robert K. Leidy, Thomas J. DUNBAR
Принадлежит: GlobalFoundries US 2 LLC

Tunable filter structures, methods of manufacture and design structures are disclosed. The method of forming a filter structure includes forming a piezoelectric resonance filter over a cavity structure. The forming of the piezoelectric resonance filter includes: forming an upper electrode on one side of a piezoelectric material; and forming a lower electrode on an opposing side of the piezoelectric material. The method further includes forming a micro-electro-mechanical structure (MEMS) cantilever beam at a location in which, upon actuation, makes contact with the piezoelectric resonance filter.

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Номер записи: 87
25-07-2019 дата публикации

Surface mount device stacking for reduced form factor

Номер: US20190230794A1
Автор: Darren Roger Frenette, George Khoury, Leslie Paul WALLIS, Lori Ann DEORIO
Принадлежит: Skyworks Solutions Inc

A packaged module for use in a wireless communication device has a substrate supporting an integrated circuit die that includes at least a microprocessor and radio frequency receiver circuitry and a stacked filter assembly configured as a filter circuit that is in communication with the radio frequency receiver circuitry. The stacked filter assembly includes a plurality of passive components, where each passive component is packaged as a surface mount device. At least one passive component is in direct communication with the substrate and at least another passive component is supported above the substrate by the at least one passive component that is in the direct communication with the substrate.

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Номер записи: 88
16-07-2020 дата публикации

Hybrid filter device and multiplexer

Номер: US20200228094A1
Автор: Masanori Kato
Принадлежит: Murata Manufacturing Co Ltd

A hybrid filter device ( 1 ) includes an acoustic wave device (AD) that includes an acoustic wave resonator and a passive device (PD) that includes an inductor element or an inductor element and a capacitance element. At least one of the acoustic wave device (AD) and the passive device (PD) is mounted on a substrate ( 20 ) of the hybrid filter device ( 1 ) and the acoustic wave device (AD) and the passive device (PD) are electrically connected to each other. The acoustic wave device (AD) overlaps the passive device (PD) when the hybrid filter device ( 1 ) is viewed in a direction perpendicular to one main surface ( 20 a ) of the substrate ( 20 ).

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Номер записи: 89
01-08-2019 дата публикации

ELASTIC WAVE DEVICE, RADIO-FREQUENCY FRONT-END CIRCUIT, AND COMMUNICATION DEVICE

Номер: US20190238112A1
Автор: FUKUDA Yuji
Принадлежит:

An elastic wave device includes a mount board, a transmit filter, a receive filter, and a sealing resin layer. The transmit filter includes a first piezoelectric substrate, and is joined to the mount board by first bumps. The receive filter includes a second piezoelectric substrate, and is joined to the mount board by second bumps. The sealing resin layer is provided on the mount board. The height of each first bump is H1; the joint area, on the first piezoelectric substrate side, of each first bump is A1; and the joint area, on the mount board side, of each first bump is B1; the height of each second bump is H2; the joint area, on the second piezoelectric substrate side, of each second bump is A2; and the joint area, on the mount board side, of each second bump is B2. The first bumps and the second bumps satisfy at least one of: A1>A2 and B1>B2; and H1 Подробнее

Номер записи: 90
01-09-2016 дата публикации

ELECTRONIC COMPONENT, OSCILLATOR, ELECTRONIC APPARATUS, AND MOVING OBJECT

Номер: US20160254798A1
Автор: HOSAKA Koji, TAKEBAYASHI Yuichi, Yamaguchi Yoshiyuki
Принадлежит:

An electronic component includes: an oscillation circuit that is electrically connected to a resonator element; and a substrate that includes a first surface on which the oscillation circuit and wiring that is electrically connected with the resonator element and the oscillation circuit to form an oscillation loop are disposed, and a second surface opposite to the first surface. The substrate includes a conductor layer between the first surface and the second surface. The conductor layer overlaps the wiring in a plan view. A distance between the wiring and the conductor layer in a thickness direction as a direction along a direction intersecting the first surface and the second surface is from 0.35 mm to 0.7 mm. 120-. (canceled)21. An electronic component comprising:an oscillation circuit that is electrically connected to a resonator element; and wiring, the wiring being electrically connected to the resonator element and the oscillation circuit so as to form an oscillation loop; and', 'a surface on which a plurality of external connection terminals are provided, the plurality of external connection terminals having a ground terminal connected to a ground potential,, 'a substrate that includeswherein the substrate includes a conductor layer located between the wiring and the surface in a thickness direction of the substrate,the conductor layer is electrically connected to the ground terminal,the conductor layer overlaps with the wiring in a plan view, anda distance between the wiring and the conductor layer in the thickness direction is from 0.35 mm to 0.7 mm.22. An electronic component comprising:an oscillation circuit that is electrically connected to a resonator element; and wiring, the wiring being electrically connected to the resonator element and the oscillation circuit so as to form an oscillation loop; and', 'a surface on which a plurality of external connection terminals are provided, the plurality of external connection terminals having a ground terminal ...

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Номер записи: 91
23-07-2020 дата публикации

Vibrator Device, Oscillator, Gyro Sensor, Electronic Apparatus, And Vehicle

Номер: US20200235717A1
Автор: IDE Tsugio, OTSUKI TETSUYA
Принадлежит:

A vibrator device includes a vibration element including a vibration portion and a fixed portion, a supporting member to which the fixed portion is attached to support the vibration element, and a first substrate to which the supporting member is attached, the supporting member includes a attaching portion attached to the first substrate, and A1≥A2 is satisfied in a case where an area of a rectangular region including the fixed portion is A1 and an area of a rectangular region including the attaching portion is A2 in a plan view seen from a thickness direction of the vibration element. 1. A vibrator device comprising:a vibration element;a supporting member to which the vibration element is attached via a first attaching member; anda substrate to which the supporting member is attached via a second attaching member,wherein A1≥A2 is satisfied;an area of a rectangular region including the first attachment member is the A1; andan area of a rectangular region including the second attaching member is the A2 in a plan view.2. The vibrator device according to claim 1 ,wherein the vibration element includes a vibration member, andthe vibration member includes a region overlapping the rectangular region including the first attachment member and the rectangular region including the second attaching member, in the plan view.3. The vibrator device according to claim 1 ,wherein 0.1≤(A2/A1)≤1.0 is satisfied.4. The vibrator device according to claim 3 ,where 0.5≤(A2/A1)≤0.8 is satisfied.5. The vibrator device according to claim 1 ,wherein at least a part of the supporting member is made of the same material as the vibration element.6. The vibrator device according to claim 5 ,wherein the supporting member includes a first crystal material having a first crystal orientation, andthe vibration element includes a second crystal material having a second crystal orientation that is different from the first crystal orientation in the plan view.7. The vibrator device according to claim 1 , ...

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Номер записи: 92
01-10-2015 дата публикации

Electronic component, electronic apparatus, and moving object

Номер: US20150280101A1
Автор: Manabu Kondo
Принадлежит: Seiko Epson Corp

An electronic component includes a functional element, a mounting plate which has a first surface, on which the functional element is arranged, a second surface opposite to the first surface, and an outer peripheral surface connecting the first surface and the second surface, and a circuit board which is connected to the second surface through connection members. The circuit board and the mounting plate are different in thermal expansion coefficient, and the mounting plate is provided with slits from the outer peripheral surface toward the inside.

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Номер записи: 93
22-09-2016 дата публикации

Resonator element, resonator, resonator device, oscillator, electronic apparatus, and moving object

Номер: US20160277004A1
Автор: Jun NISHIDE, Junji Kobayashi
Принадлежит: Seiko Epson Corp

A resonator element includes: a substrate which includes a first region performing thickness shear vibration, a second region located in a periphery of the first region and having a smaller thickness than the first region, a fixed end, and a free end opposite to the fixed end in the first region in a plan view; and excitation electrodes which are disposed on a front and a rear of the first region and have regions overlapping each other in the plan view. A center of the first region and a center of the regions overlapping each other are located between a center of the substrate and the free end in the plan view. When Cs is a distance between the center of the regions overlapping each other and the center of the substrate in the plan view, a relation of 105 μm<Cs<130 μm is satisfied.

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Номер записи: 94
01-10-2015 дата публикации

Multi-Function Frequency Control Device

Номер: US20150280686A1
Автор: Brent John Robinson
Принадлежит: Rakon Ltd

A single frequency control device incorporating a high frequency resonator, a low frequency resonator and a temperature sensing element, the latter thermally coupled closely to the said resonators to facilitate temperature sensing with higher resolution and accuracy. Additional benefits offered by the structure include smaller size and lower cost.

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Номер записи: 95
13-08-2020 дата публикации

Resonator Element, Resonator, Electronic Device, Electronic Apparatus, Mobile Body And Method Of Manufacturing Resonator Element

Номер: US20200259068A1
Автор: FUJIHARA Yoshitaka, HATANAKA Kazuhisa, NAITO Matsutaro
Принадлежит:

A resonator element includes: a substrate; and an electrode that includes a first conductive layer provided on a surface of the substrate, and a second conductive layer, provided on the opposite side to the first conductive layer on the substrate side, which is disposed within an outer edge of the first conductive layer when seen in a plan view from a direction perpendicular to the surface. 1. A resonator element comprising:a substrate having a front surface and a back surface and a plurality of edges that connect the front surface and the back surface, and having a vibration portion and an outer edge portion formed integrally with an outer edge of the vibration portion, the outer edge portion has a larger thickness than that of the vibration portion; andan electrode formed on either the front surface or the back surface of the substrate that includes a lower conductive layer and an upper conductive layer that is located on the lower conductive layer; an excitation electrode that is located on vibration portion; and', 'a lead electrode that extends from the excitation electrode toward a first edge that is one of the plurality of edges of the substrate;, 'wherein the electrode includeswherein an area of the excitation electrode is less than that of the vibration portion;the lead electrode is connected to the excitation electrode at a location on the vibration portion, and the lead electrode extends from the location and crosses the outer edge of the vibration portion; andthe lead electrode includes a pair of outer edges that extend along a direction in which the lead electrode extends toward the first edge of the substrate, the pair of outer edges being defined by a pair of outer edges of the lower conductive layer; anda pair of edges of the upper conductive layer that extend along the direction are arranged between the pair of outer edge of the lower conductive layer in a plan view of the substrate.2. The resonator element according to claim 1 , wherein the upper ...

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Номер записи: 96
13-08-2020 дата публикации

HYBRID FILTER ARCHITECTURE WITH INTEGRATED PASSIVES, ACOUSTIC WAVE RESONATORS AND HERMETICALLY SEALED CAVITIES BETWEEN TWO RESONATOR DIES

Номер: US20200259478A1
Автор: DOGIAMIS Georgios C., EID Feras, Kamgaing Telesphor, NAIR Vijay K., Swan Johanna M.
Принадлежит:

Embodiments of the invention include an acoustic wave resonator (AWR) module. In an embodiment, the AWR module may include a first AWR substrate and a second AWR substrate affixed to the first AWR substrate. In an embodiment, the first AWR substrate and the second AWR substrate define a hermetically sealed cavity. A first AWR device may be positioned in the cavity and formed on the first AWR substrate, and a second AWR device may be positioned in the cavity and formed on the second AWR substrate. In an embodiment, a center frequency of the first AWR device is different than a center frequency of the second AWR device. In additional embodiment of the invention, the AWR module may be integrated into a hybrid filter. The hybrid filter may include an AWR module and other RF passive devices embedded in a packaging substrate. 1. An acoustic wave resonator (AWR) module , comprising:a first AWR substrate;a second AWR substrate affixed to the first AWR substrate, wherein the first AWR substrate and the second AWR substrate define a hermetically sealed cavity;a first AWR device within the cavity and formed on the first AWR substrate; anda second AWR device within the cavity and formed on the second AWR substrate, wherein a center frequency of the first AWR device is different than a center frequency of the second AWR device.2. The AWR module of claim 1 , wherein the first AWR device and the second AWR device each comprise a first electrode claim 1 , a second electrode claim 1 , and a piezoelectric layer claim 1 , and wherein a thickness of the piezoelectric layer of the first AWR device is a different thickness than the piezoelectric layer of the second AWR device.3. The AWR module of claim 2 , wherein through substrate vias are formed through only one of the first AWR substrate and the second AWR substrate.4. The AWR module of claim 2 , wherein a footprint of the first AWR device at least partially overlaps a footprint of the second AWR device.5. The AWR module of claim 4 , ...

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Номер записи: 97
20-08-2020 дата публикации

Thin-film bulk acoustic resonator and semiconductor apparatus comprising the same

Номер: US20200266790A1
Автор: Clifford Ian Drowley, Haiting Li, Herb He Huang, Jiguang Zhu
Принадлежит: Ningbo Semiconductor International Corp, Semiconductor Manufacturing International Shanghai Corp

A thin-film bulk acoustic resonator (FBAR) apparatus includes a lower dielectric layer including a first cavity; an upper dielectric layer including a second cavity, wherein the upper dielectric layer is on the lower dielectric layer; and an acoustic resonance film that is positioned between and separating the first and the second cavities. The acoustic resonance film includes a lower electrode layer, an upper electrode layer, and a piezoelectric film that is sandwiched between the lower and upper electrode layers. A plan view of the first and the second cavities overlap to form an overlapped region having a polygonal shape without parallel sides.

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Номер записи: 98
05-09-2019 дата публикации

INTEGRATED ACOUSTIC FILTER ON COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DIE

Номер: US20190273116A1
Автор: CHU Yun Han, FANELLI Stephen Alan, GOKTEPELI Sinan
Принадлежит:

A radio frequency (RF) front-end (RFFE) device includes a die having a front-side dielectric layer on an active device. The active device is on a first substrate. The RFFE device also includes a microelectromechanical system (MEMS) device. The MEMS device is integrated on the die at a different layer than the active device. The MEMS device includes a cap layer composed of a cavity in the front-side dielectric layer of the die. The cavity in the front-side dielectric layer is between the first substrate and a second substrate. The cap is coupled to the front-side dielectric layer. 1. A radio frequency (RF) front-end (RFFE) device , comprising:a die including a front-side dielectric layer on an active device, the active device on a first substrate; anda microelectromechanical system (MEMS) device integrated on the die at a different layer than the active device, the MEMS device having a cap layer comprised of a cavity in the front-side dielectric layer of the die, between the first substrate and a second substrate coupled to the front-side dielectric layer.2. The RFFE device of claim 1 , in which the MEMS device comprises an acoustic filter claim 1 , comprising:a filter layer on the second substrate, the filter layer bonded to the front-side dielectric layer; anda first electrode on the filter layer and coupled to the active device through a first back-end-of-line (BEOL) interconnect.3. The RFFE device of claim 2 , in which the acoustic filter comprises a surface acoustic wave (SAW) filter.4. The RFFE device of claim 1 , in which the MEMS device comprises an acoustic filter claim 1 , comprising:the second substrate bonded to at least the front-side dielectric layer of the die and arranged opposite the cap layer; anda filter layer between a first electrode and a second electrode, the first electrode coupled to the active device through a first back-end-of-line (BEOL) interconnect and the second electrode coupled to a second BEOL interconnect.5. The RFFE device of claim ...

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Номер записи: 99
05-10-2017 дата публикации

Baw filter and method for manufacturing the same

Номер: US20170288641A1
Автор: Han Tae Kim, Hyun Min HWANG, Jong Beom Kim, Seung Joo Shin
Принадлежит: Samsung Electro Mechanics Co Ltd

A bulk acoustic wave (BAW) filter includes: a substrate including a first mounting region and a second mounting region which are spaced apart from each other; a first fixing member disposed adjacent to the first mounting region; a second fixing member disposed adjacent to the second mounting region; a Tx filter mounted on the first mounting region and fixed by the first fixing member; and an Rx filter mounted on the second mounting region and fixed by the second fixing member.

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Номер записи: 100