Driving backplane, display panel, and display device

A driving backplane, comprising: a base substrate, a plurality of data lines provided on the base substrate, adjacent first gate line and second gate line, and a plurality of pixel driving circuits provided on the base substrate. Each pixel driving circuit comprises a first transistor, the first transistor comprises an active layer, and the active layer comprises an active portion, a first conductive portion and a second conductive portion, and a first contact portion. The plurality of pixel driving circuits comprise: a first pixel driving circuit coupled to one data line and the first gate line, and a second pixel driving circuit coupled to the data line and the second gate line. The first conductive portion of the first transistor in the first pixel driving circuit is in contact with the first conductive portion of the first transistor in the second pixel driving circuit by means of the first contact portion, and is coupled to the data line by means of the first contact portion.

Display panel and manufacturing method therefor, and display apparatus

A display substrate, having a display region and a peripheral region. The display substrate comprises: a substrate, a first retaining wall, a second retaining wall, and a connecting portion. The first retaining wall and the second retaining wall are located on one side of the substrate and are located in the peripheral region; the second retaining wall is distant from the display region relative to the first retaining wall; the height of the second retaining wall is greater than that of the first retaining wall. The connecting portion is located between the first retaining wall and the second retaining wall, the connecting portion connects the first retaining wall and the second retaining wall, and the height of the connecting portion is less than that of the first retaining wall. At least part of the first retaining wall, the connecting portion, and the second retaining wall is an integral structure.

유기 발광 표시 장치

... 본 발명의 일 실시예에 따른 유기 발광 표시 장치는 베이스 기판의 액티브 영역에 구비된 유기 발광 소자층과 유기 발광 소자층을 보호할 수 있도록 봉지(encapsulation)하는 봉지층을 포함하되, 봉지층은 유기 발광 소자층의 상면 및 측면을 덮도록 구비된 접착층 및 봉지 기판으로 구비되고, 유기 발광 소자층 측면을 통한 투습을 방지할 수 있도록 봉지 기판은 액티브 영역과 액티브 영역 외곽에서 다른 두께로 구비된다.

유기 발광 소자

... 제1전극; 상기 제1전극에 대향된 제2전극; 및 상기 제1전극과 상기 제2전극 사이에 개재되고 발광층을 포함한 유기층;을 포함하고, 상기 발광층은 호스트 및 도펀트를 포함하고, 상기 호스트는 포스핀 옥사이드계 화합물, 피리미딘-함유 화합물, 트리아진-함유 화합물 및 시아노기-함유 화합물 중에서 선택된 적어도 하나의 화합물을 포함하고, 상기 도펀트는 하기 식 1을 만족하는, 유기 발광 소자로서, <식 1> │ED,S1 - ED,T1│ ≤ 0.2 eV 상기 식 1 중, ED,S1는 상기 도펀트의 일중항 에너지(eV)이고, ED,T1는 상기 도펀트의 삼중항 에너지(eV)이고, 상기 유기 발광 소자의 EL 스펙트럼은 하기 식 2 및 식 3을 만족하는, 유기 발광 소자가 제공된다. <식 2> EL(λ=420nm)/EL (λ=MAX) < 0.1 <식 3> λ(MAX) < 470nm 상기 식 2 및 3 중, EL(λ=420nm)은 발광 파장 420nm에서의 EL세기(electroluminescence intensity)를 나타내고, EL(λ=MAX)은 최대 발광 파장에서의 EL세기를 나타내고, λ(MAX)는 최대 발광 파장을 나타낸다.

Display apparatus

A display apparatus includes: a substrate having a transmission area, a display area, and a non-display area, wherein the display area surrounds the transmission area, and the non-display area is between the transmission area and the display area; a first wire on the substrate and including a first-1 wire and a first-2 wire extending in a first direction and being spaced apart from each other by the transmission area; a first connecting wire on a same layer as that of the first wire and connecting the first-1 wire to the first-2 wire; and a second wire extending in the first direction and including a second-1 portion and a second-2 portion, wherein the second-1 portion at least partially overlaps the first connecting wire and is arranged on a different layer from that of the first wire, and the second-2 portion is on the same layer as that of the first wire.

Display apparatus having a notch

A display apparatus includes a substrate which includes a first pixel area and a second pixel area. A third pixel area is spaced apart from the second pixel area. A notch peripheral area is adjacent to the first, second and third pixel areas. A plurality of pixels are provided in the first, second and third pixel areas. A first scan line is disposed on the substrate. The first scan line includes a first portion disposed in the second pixel area, a second portion disposed in the third pixel area, and a third portion which connects the first portion to the second portion. The third portion is disposed in the notch peripheral area. A second scan line is disposed on the substrate in the first pixel area. A surface area of the first scan line is from about 90% to about 110% of a surface area of the second scan line.

DISPLAY PANEL, DISPLAY DEVICE, AND MANUFACTURING METHOD FOR DISPLAY PANEL

A display panel (1), a display device, and a manufacturing method for the display panel (1). The display panel (1) comprises a base substrate (100). The base substrate (100) is provided with a first metal layer (001), a second metal layer (002), and a third metal layer (003) thereon. The display panel (1) further comprises traces. The traces comprise a first trace extending in a first direction, and a second trace extending in a second direction. The first trace comprises a first sub-trace portion (011), a second sub-trace portion (021), a first auxiliary portion (012), and a second auxiliary portion (022). The second trace comprises a third sub-trace portion (031) and a third auxiliary portion (032). The first direction is different from the second direction. The first sub-trace portion (011) and the second sub-trace portion (021) are located at the third metal layer (003).

Organic light emitting diode display with plurality of thin film transistors in portions of curved semiconductor layer

An organic light emitting diode display includes a substrate, a scan line on the substrate for transferring a scan signal, a data line crossing the scan line and for transferring a data signal, a driving voltage line crossing the scan line and for transferring a driving voltage, a switching thin film transistor coupled to the scan line and the data line, a driving thin film transistor coupled to a switching drain electrode of the switching thin film transistor, and an organic light emitting diode (OLED) coupled to a driving drain electrode of the driving thin film transistor, wherein a driving semiconductor layer of the driving thin film transistor is bent and in a plane substantially parallel to the substrate.

Display device with protection against electrostatic discharge

A display device including a substrate including a first display region having a first width, a second display region having a second width smaller than the first width, a peripheral region at a periphery of the first and second display regions, and a dummy region in the peripheral region, a first pixel in the first display region, a second pixel in the second display region, a first control line connected to the first pixel and extending in the first display region, a second control line connected to the second pixel and extending in the second display region, and a dummy line connected to the second control line in the dummy region, wherein the second control line is at a first conductive layer on a first insulating layer, the dummy line is at a second conductive layer on a second insulating layer on the first conductive layer.

Organic Light Emitting Display Device

An organic light emitting display device including a substrate, a light emitting element on the substrate, and a driving thin film transistor supplying drive current to the light emitting element is disclosed. The driving thin film transistor includes a buffer layer on the substrate, a first polycrystalline silicon semiconductor layer on the buffer layer, a first oxide semiconductor layer contacting the first polycrystalline silicon semiconductor layer while being disposed thereon and including a first channel region, a first source region, and a first drain region, a gate insulating layer covering the first oxide semiconductor layer and the first polycrystalline silicon semiconductor layer, a first gate electrode disposed on the gate insulating layer, a first source electrode connected to the first source region, a first drain electrode connected to the first drain region, and a first light shielding layer disposed under the first oxide semiconductor layer while overlapping therewith.

Displays Having Transparent Openings

An electronic device may include a display and an optical sensor formed underneath the display. The electronic device may include a plurality of transparent windows that overlap the optical sensor. The resolution of the display panel may be reduced in some areas due to the presence of the transparent windows. To mitigate diffraction artifacts, a first sensor (13-1) may sense light through a first pixel removal region having transparent windows arranged according to a first pattern. A second sensor (13-2) may sense light through a second pixel removal region having transparent windows arranged according to a second pattern that is different than the first pattern. The first and second patterns of the transparent windows may result in the first and second sensors having different diffraction artifacts. Therefore, an image from the first sensor may be corrected for diffraction artifacts based on an image from the second sensor.

Electro-optical device and electronic apparatus with first and second DA conversion circuits having upper and lower capacitance elements

An electro-optical device includes a DA conversion circuit to convert 10 bits of data into an analog voltage output to a data line. The DA conversion circuit includes a first DA conversion circuit to convert upper 5 bits into a voltage and outputs converted voltage to the data line, a second DA conversion circuit to convert lower 5 bits into a voltage and outputs converted voltage to a relay line, and a coupling capacitance including one end electrically coupled to the second DA conversion circuit and another end electrically coupled to the data line, wherein the first DA conversion circuit includes a capacitance element corresponding to the upper 5 bits and is arranged in the Y direction along the data line, and the second DA conversion circuit includes a capacitance element corresponding to the lower 5 bits and is arranged in the Y direction along the data line.

Organic Light Emitting Display with Touch Sensor

Disclosed is an organic light emitting display device with a touch sensor. The display device has a touch sensor that is directly disposed on a sealing part, thus removing the necessity of an additional adhesion process, simplifying a manufacturing process and reducing manufacture cost. In addition, the display device with the touch sensor includes a display cover electrode of a display pad that is made of a same material as a conductive layer included in the touch sensor, thus preventing damage to the display pad electrode.

Driving circuit of active-matrix organic light-emitting diode with hybrid transistors

A driving circuit includes a first transistor, a second transistor and a third transistor. The first transistor has a first terminal connected to a first voltage level, a second terminal, and a third terminal. The second transistor has a first terminal connected to the second terminal of the first transistor, a second terminal connected to a second voltage level, and a third terminal connected to the third terminal of the first transistor. The third transistor has a first terminal connected to the first terminal of the second transistor. The first transistor and the second transistor are low temperature poly-silicon transistors, and the third transistor is an oxide semiconductor transistor.

DISPLAY SUBSTRATE, PREPARATION METHOD THEREOF AND DISPLAY DEVICE

A display substrate and a preparation method thereof, and a display device are provided. The display substrate (200/300/400) includes a display region (201/301/401) and an opening region (2011/3011/4011), the display region (200/300/400) surrounds the opening region (2011/3011/4011), a first barrier wall (2012/3012/4012) is between the display region (201/301/401) and the opening region (2011/3011/4011), and the first barrier wall (2012/3012/4012) surrounds the opening region (2011/3011/4011); the first barrier wall (2012/3012/4012) includes a first metal layer structure, and at least one side surface, surrounding the opening region (2011/3011/4011), of the first metal layer structure includes a recess (2012A/3012A/4012A). The display substrate combines the imaging device with the display region of the display substrate and has a better encapsulation effect.

DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME

A first TFT includes a first semiconductor layer formed of polysilicon, a gate insulating film provided on the first semiconductor layer, a third semiconductor layer provided on the gate insulating film, and a first gate electrode provided on the third semiconductor layer, and a second TFT includes a second semiconductor layer formed of an oxide semiconductor, a first metal layer and a second metal layer formed on a third conductor region and a fourth conductor region, respectively, of the second semiconductor layer.

Display device

A display device is disclosed, and the display device includes a substrate including first to third display regions, the second and the third display regions being spaced from each other, each of the second and third display regions having an area smaller than that of the first display region and being continuous to the first display region, first to third pixels in the first to third display regions, first to third lines connected to the first to third pixels, and a dummy part configured to compensate for a difference between a load value of the first lines and load values of the second and third lines, wherein the second display region includes a first sub-region adjacent to the first display region and a second sub-region spaced from the first display region, and the third display region includes a third sub-region adjacent to the first display region and a fourth sub-region spaced from the first display region.

DISPLAY DEVICE

A display device includes a base substrate, a circuit layer including a transistor including a gate electrode, an auxiliary conductive layer, a first insulating layer disposed on the transistor and the auxiliary conductive layer, and a second insulating layer disposed on the first insulating layer, and a display element layer including a pixel defining layer disposed on the circuit layer and a light-emitting element including a first electrode, a functional layer, and a second electrode, which are sequentially stacked.

ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE

An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.

DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME

A display device includes an active layer disposed on a substrate, the active layer including a channel region and a first conductive region, the first conductive region including a first sub-conductive region disposed on a first side of the channel region, and a second sub-conductive region disposed between the first sub-conductive region and the channel region. The first conductive region further includes a first doped layer disposed on the substrate in the first sub-conductive region, a second doped layer disposed on the first doped layer in the first sub-conductive region, disposed on the substrate in the second sub-conductive region, and a third doped layer disposed on the second doped layer in the first sub-conductive region and the second sub-conductive region.

Array substrate and manufacturing method thereof

An array substrate and a manufacturing method thereof are provided. The array substrate includes a substrate and a first recess. The first recess sequentially extends through a second dielectric layer, a third insulating layer, a first dielectric layer, a second insulating layer, a first insulating layer, an active layer, and a portion of a barrier layer. A bottom surface of the first recess is formed inside the barrier layer.

Display panel and display device

A display panel and a display device are provided. First pixel driving circuits are arranged in a display transition area, and the influence of the first pixel driving circuit on a display light transmissive area is avoided, and the light transmittance of the display light transmissive area is improved. A first pixel gap is arranged between adjacent first pixel driving circuits in a first display area, ensuring that a first signal line passes through the first display area from the first pixel gap, without the need to perform discontinuation processing on the first signal line at the first display area, and the problem of load difference between two discontinued wirings due to the discontinuation of the first signal line is avoided, to eliminate the position restriction of the first display area, and providing innovation for the development of the technology of under-screen devices.

Display device

A display device comprises: a substrate including display area AA and non-display area NA; a driving circuit unit comprising a first thin-film transistor 200 located in the non-display area NA; and a pixel unit comprising a driving thin-film transistor 400 and a switching thin-film transistor 300 located in the display area AA. The first thin-film transistor 200 includes a first semiconductor pattern 210 comprising a first channel region, a first gate electrode 211 and a first source and drain electrodes 212,213. The driving thin-film transistor 400 includes a first active layer 411 and a second active layer 412 which may comprise a first oxide semiconductor, a lower gate electrode 410 and a upper gate electrode 413, and driving second source and drain electrodes 414,415 connected to each of the first active layer 411 and second active layer 412 through contact holes 414a,414b,415a,415b. Where the contact hole pair 414a,415a connected to the first active layer 411 are further apart than ...

Array substrate and display apparatus

An array substrate is provided. The array substrate includes a plurality of first type data lines and a plurality of second type data lines. A respective one of the plurality of first type data lines crosses over subpixel apertures of multiple subpixels of a first color, and does not crosses over subpixel apertures of any subpixel of a second color and does not crosses over subpixel apertures of any subpixel of a third color, the first color, the second color, and the third color being different colors. A respective one of the plurality of second type data line does not cross over any subpixel aperture. A respective subpixel aperture of a subpixel of the first color includes a first region and a second region. A ratio of a first area of the first region to a second area of the second region is in a range of 2: 8 to 8: 2.

Display device comprising spacer and manufacturing method thereof

Disclosed is a display device 100 with a thin film transistor disposed on a substrate, a bank 140 disposed on the thin film transistor and a spacer structure assemblies including spacers 150, 160 disposed on the bank. The spacer structure assemblies consisting of at least a pair of spacers, each having different separation distances from each other at different positions of the spacers. The spacer structure may be placed between adjacent luminous elements, pixels or other such light emitting regions of the display. The spacers may be formed in a row with a change in width and the spacers arranged side by side on the bank. The separation distance between the spacers may be inversely proportional to the width of a surface of the spacers. The width of the surface may decrease when the separation distance increases. The height the spacers may be equal. The spacers may have an inverse tapered shape. The spacers may be formed by using a negative type of photoresist. A method of manufacturing ...

표시패널

... 본 발명의 일 예시는 각 단위화소에 구비되고 서로 다른 색상에 대응하며 제 1 방향으로 나란하게 배열된 제 1, 제 2, 제 3 및 제 4 서브화소 각각의 발광영역에 배치되는 유기발광소자, 상기 제 1, 제 2, 제 3 및 제 4 서브화소 각각의 비발광영역에 배치되고 상기 유기발광소자에 구동전류를 공급하는 회로부, 상기 제 1 방향에 교차하는 제 2 방향으로 나란하게 배열된 서브화소들로 이루어진 각 수직라인에 대응하는 데이터라인을 포함하는 표시패널을 제공한다. 여기서, 상기 데이터라인은 상기 비발광영역 사이에 배치되고 상기 제 2 방향의 직선 형태로 이루어지는 일직선형상부, 및 상기 발광영역 사이에 배치되고 상기 제 2 방향에 비스듬한 사선과 상기 제 1 방향의 직선을 포함하는 형태로 이루어지는 다각형상부를 포함한다. 이로써, 각 단위화소의 양측 가장자리에 배치된 제 1 및 제 4 서브화소의 발광영역 사이의 최소 간격이 제 1 및 제 4 서브화소의 비발광영역 사이의 간격보다 작아질 수 있으므로, 제 1 및 제 4 서브화소에서 방출되는 광의 혼색이 용이해질 수 있다.

DISPLAY DEVICE AND ELECTRONIC DEVICE

A display device is provided with a drive substrate including a first surface and a second surface, and a plurality of light emitting elements provided on the first surface. The drive substrate is provided with a plurality of drive transistors provided on the second surface and drives the plurality of light emitting elements, respectively, a plurality of through electrodes that penetrates between the first surface and the second surface, and a plurality of connection units provided on the second surface, each of which connects a diffusion layer of each of the drive transistors and each of the through electrodes to each other. The connection unit is provided with a semiconductor layer or a semiconductor compound layer.

DISPLAY DEVICE

A display device includes: a display panel including a light emitting element layer including a pixel defining layer dividing a display area into an emission area and a non-emission area, a thin film encapsulation layer disposed on the light emitting element layer, and a shielding layer including a shielding electrode disposed on the thin film encapsulation layer that is disposed on a substrate including the display area and a non-display area; and a touch panel attached to the display panel through a first optically clear adhesive and including touch electrodes, wherein the light emitting element layer includes a light emitting layer corresponding to the emission area, and the shielding electrode overlaps the non-emission area.

Emissive display device

An emissive display device includes a polycrystalline semiconductor including a channel, source region, and drain region of a driving transistor disposed on a substrate. The device includes a gate electrode of the driving transistor overlapping the channel of the driving transistor, an oxide semiconductor including a channel, a source region, and a drain region of a second transistor disposed on the substrate, and a first connection electrode. The first connection electrode includes a first connector electrically connected to the gate electrode of the driving transistor, a second connector electrically connected to a second electrode of the second transistor, and a main body disposed between the first connector and the second connector. The device includes an initialization voltage line disposed on the substrate and applying an initialization voltage. The initialization voltage line surrounds at least a part of the second connector of the first connection electrode.

Flexible display apparatus

A display apparatus includes a flexible substrate and a first insulation layer disposed on the flexible substrate. The flexible substrate includes a bending area. The first insulation layer includes a first unevenness disposed over the bending area. The first unevenness includes two or more steps in at least a portion of the first unevenness.

DISPLAY DEVICE INCLUDING PIXELS WITH DIFFERENT TYPES OF TRANSISTORS

A display device may include a plurality of pixels each including a light emitting element. A first scan line and a second scan line are disposed in each of the pixels. A data line is disposed in each of the pixels. A power line is disposed in each of the pixels. A reference voltage line is disposed in each of the pixels. A first transistor controls a current of the light emitting element. A second transistor is connected between the data line and a first gate electrode of the first transistor. A third transistor is connected between the reference voltage line and a first electrode of the first transistor. A fourth transistor is connected between the power line and a second electrode of the first transistor. The fourth transistor may be a transistor of a type different from that of the first to third transistors.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

When a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are stacked and a source and drain electrode layers are provided in contact with the oxide semiconductor film is manufactured, after the formation of the gate electrode layer or the source and drain electrode layers by an etching step, a step of removing a residue remaining by the etching step and existing on a surface of the gate electrode layer or a surface of the oxide semiconductor film and in the vicinity of the surface is performed. The surface density of the residue on the surface of the oxide semiconductor film or the gate electrode layer can be 1×1013atoms/cm2or lower.

Method of manufacturing a display panel using a sacrificial layer

A display panel includes: a substrate including an opening area, a display area, and a non-display area, the display area surrounding the opening area, and the non-display area being between the opening area and the display area; a plurality of display elements at the display area of the substrate, each of the display elements including a pixel electrode, an emission layer on the pixel electrode, and an opposite electrode on the emission layer; a thin-film encapsulation layer covering the plurality of display elements; a dam at the non-display area, and protruding from a top surface of a first insulating layer; and a recess between the opening area and the dam, and recessed in a depth direction of the first insulating layer. A lateral wall of the dam meets a first lateral wall from among lateral walls of the recess, the first lateral wall being adjacent to the display area.

DISPLAY PANEL, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING DISPLAY PANEL

A display panel is provided, including: a base substrate; a pixel circuit on the base substrate, the pixel circuit includes a transistor including an active layer, a gate electrode, a first electrode and a second electrode; and a fingerprint recognition circuit including a photosensitive circuit, a storage circuit and an output circuit, the storage circuit includes a first capacitor including a first capacitance electrode and a second capacitance electrode; the first capacitance electrode is arranged in the same layer as at least one of the gate electrode, the active layer, the first capacitor or the second electrode, and/or, the second capacitance electrode is arranged in the same layer as at least one of the gate electrode, the active layer, the first electrode or the second electrode; the first capacitance electrode is located in a layer different from a layer where the second capacitance electrode is located.

Light-emitting element, display device, electronic device, organic compound, and lighting device

A light-emitting element with high emission efficiency and high reliability is provided. The light-emitting element includes a host material and a guest material in a light-emitting layer. The host material has a function of converting triplet excitation energy into light emission and the guest material emits fluorescence. The molecular structure of the guest material is a structure including a luminophore and protecting groups, and five or more protecting groups are included in one molecule of the guest material. The introduction of the protecting groups into the molecule inhibits energy transfer of triplet excitation energy by the Dexter mechanism from the host material to the guest material. As the protecting group, an alkyl group or a branched-chain alkyl group is used.

Display device and electronic device

To provide a display device capable of performing image processing. Each pixel is provided with a memory circuit in which desired correction data is retained. The correction data is generated by calculation in an external device and written to each pixel. The correction data is added to image data by capacitive coupling and supplied to a display element. Thus, the display element can display a corrected image. Through the correction, image upconversion can be performed, or image quality decreased because of variations in pixel transistor characteristics can be corrected.

Display apparatus with increased reliability

The present disclosure relates to a display apparatus with a reduced resistance of wirings configured to transfer electric signals to pixels, the display apparatus including: a plurality of pixels arranged on a substrate; a first scan line arranged on the substrate and including a first extension portion and a plurality of first branches, the first extension portion extending in a first direction in a plan view and connected to pixels in a same row from among the plurality of pixels, and the plurality of first branches extending in a second direction from the first extension portion; a second scan line arranged on the substrate, extending in the first direction in a plan view, and being spaced apart from the first extension portion in the second direction; and a plurality of first contact plugs connecting the plurality of first branches to the second scan line.

Driving backplane, display panel, and display device

A driving backplane, comprising: a base substrate, a plurality of data lines provided on the base substrate, adjacent first gate line and second gate line, and a plurality of pixel driving circuits provided on the base substrate. Each pixel driving circuit comprises a first transistor, the first transistor comprises an active layer, and the active layer comprises an active portion, a first conductive portion and a second conductive portion, and a first contact portion. The plurality of pixel driving circuits comprise: a first pixel driving circuit coupled to one data line and the first gate line, and a second pixel driving circuit coupled to the data line and the second gate line. The first conductive portion of the first transistor in the first pixel driving circuit is in contact with the first conductive portion of the first transistor in the second pixel driving circuit by means of the first contact portion, and is coupled to the data line by means of the first contact portion.

Array substrate and display apparatus

An array substrate is provided. The array substrate includes a node connecting line in a same layer as a respective voltage supply line, connected to a first capacitor electrode and a semiconductor material layer. An orthographic projection of a first anode on a base substrate at least partially overlaps with an orthographic projection of a node connecting line in a respective first subpixel. An orthographic projection of a second anode on the base substrate at least partially overlaps with an orthographic projection of the node connecting line in a respective second subpixel. An orthographic projection of a third anode on the base substrate at least partially overlaps with an orthographic projection of the node connecting line in a respective third subpixel. An orthographic projection of a fourth anode on the base substrate at least partially overlaps with an orthographic projection of the node connecting line in a respective fourth subpixel.

Thin film transistor and display device comprising the same

Thin film transistor (TFT) 100 for a display device comprises active layer 130, and gate electrode 150 overlapping the active layer. The active layer includes channel portion 130n, first connection portion 131, and second connection 132 portion. The channel portion includes first area AR1 (Figure 1A) and second area AR2 (Figure 1A) which extend from the first to the second connection portion. First conductive material layer 71 overlaps the channel portion. The channel portion is between the first conductive material layer and gate electrode. The first conductive material layer connects to the first connection portion. A first spacer 11 overlaps the channel portion, or a second conductive material layer 82 (Figure 3B) spaced from the first conductive material layer 81 (Figure 3B) overlaps the channel portion. The channel portion is between the second conductive material layer and gate electrode. The second conductive material layer connects to the first connection portion.

DISPLAY DEVICE AND METHOD OF DRIVING DISPLAY DEVICE

A display device includes a light-emitting pixel and a sensor pixel. The light-emitting pixel includes a light-emitting element, a first transistor electrically connected between a first line and a second line and configured to control a driving current flowing through the light-emitting element in response to a voltage of a first node, and a second transistor connected between the first node and a third line. The sensor pixel includes a light-receiving element connected between a sensor node and the second line, and a first sensor transistor configured to control a current flowing between the third line and a readout line in response to a voltage of the sensor node.

DISPLAY DEVICE AND METHOD OF PROVIDING THE SAME

A display device includes a first transistor including a first active pattern including a first oxide semiconductor, and a first gate electrode which is on the first active pattern, a second transistor including a second active pattern including a second oxide semiconductor different from the first oxide semiconductor, and a second gate electrode which is on the second active pattern, a first gate insulating pattern between the second active pattern and the second gate electrode, a second gate insulating pattern facing the first gate insulating pattern with the second active pattern therebetween, and a third gate insulating pattern between the first active pattern and the first gate electrode, the third gate insulating pattern directly contacting the first active pattern and the first gate electrode.

THIN FILM TRANSISTOR ARRAY SUBSTRATE INCLUDING OXIDE SEMICONDUCTOR PATTERN AND DISPLAY DEVICE INCLUDING THE SAME

The disclosure provides a driving thin film transistor and a switching thin film transistor each using an oxide semiconductor pattern as an active layer thereof. The driving thin film transistor and the switching thin film transistor include light shielding patterns, respectively. Each light shielding pattern includes a semiconductor material layer doped with P-type impurity ions. By virtue of the light shielding patterns including the semiconductor material layer, the driving thin film transistor and the switching thin film transistor achieve an increase in threshold voltage, thereby securing freedom of design.

Organic light emitting display with touch sensor

Disclosed is an organic light emitting display device with a touch sensor. The display device has a touch sensor that is directly disposed on a sealing part, thus removing the necessity of an additional adhesion process, simplifying a manufacturing process and reducing manufacture cost. In addition, the display device with the touch sensor includes a display cover electrode of a display pad that is made of a same material as a conductive layer included in the touch sensor, thus preventing damage to the display pad electrode.

Display Substrate, Preparation Method thereof, and Display Apparatus

Disclosed is a display substrate including a base substrate, which includes first and second display regions, and at least one first data line. The first display region includes first and second sub-display regions located on opposite sides of the second display region along a first direction; and a third sub-display region located on at least one side of the second display region along a second direction. The first data line includes a first sub-data line located in the first sub-display region and connected with a pixel circuit of the first sub-display region, a second sub-data line located in the second sub-display region and connected with a pixel circuit of the second sub-display region, and a third sub-data line which is connected with the first and second sub-data lines, located in the third sub-display region, and connected with at least one second pixel circuit of the third sub-display region.

Display panel and display device with controllable width-to-length ratio of channel region in different subpixels

Display panel and display device are provided. The display panel includes a plurality of subpixels. A subpixel of the plurality of subpixels includes a pixel circuit and a light emitting element that are electrically connected. The pixel circuit includes a first transistor. A first electrode of the first transistor is connected to a first reference voltage signal terminal. A second electrode of the first transistor is electrically connected to an anode of the light emitting element. In a light emitting retention stage of the subpixel of the plurality of subpixels, the first reference voltage signal terminal is connected to a negative potential signal or a ground potential signal. The plurality of subpixels includes at least a first subpixel and a second subpixel, and a color of the first subpixel is different from a color of the second subpixel.

Display panel, method of manufacturing the same and display device

The present disclosure provides a display panel, a method of manufacturing the same, and a display device. The initialization signal line layer in the display panel includes an initialization signal line pattern arranged in each of the plurality of sub-pixel areas; the first auxiliary signal line layer includes a plurality of first auxiliary signal line patterns corresponding to the plurality of sub-pixel areas in a one-to-one manner, and the first auxiliary signal line pattern is coupled to an initialization signal line pattern in a corresponding sub-pixel area, at least part of the first auxiliary signal line pattern extends along the first direction, and first auxiliary signal line patterns corresponding to sub-pixel areas in a same row of sub-pixel areas are sequentially coupled.

Display device

A display device includes a metal layer disposed on a substrate; a transistor disposed on the metal layer; and a light emitting element electrically connected to the transistor, wherein the transistor includes a semiconductor layer at least partially overlapping the metal layer, the semiconductor layer includes a first region, a second region, and a channel region disposed between the first region and the second region, and the metal layer overlaps the second region and the channel region and is spaced apart from the first region in a plan view.

DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME

A display device according to an embodiment of the present invention includes a substrate, a display part including a plurality of pixels, each of which includes a transistor having an oxide semiconductor layer on the substrate, a first wiring electrically connected to the plurality of pixels, a terminal electrically connected to the first wiring, and a second wiring which is an oxide conductive layer having the same composition as the oxide semiconductor layer, has a cross-sectional surface along a periphery of the substrate, and is electrically connected to the terminal.

DISPLAY DEVICE

The present disclosure relates to a display device, and one or more embodiments provides a display device including a substrate, a transistor above the substrate, a pixel electrode connected to the transistor, an extension electrode connected between the transistor and the pixel electrode, an additional capacitor electrode at a same layer as the extension electrode, overlapping the pixel electrode, and to which a constant voltage is applied, a light-emitting layer above the pixel electrode, and a common electrode above the light-emitting layer.

DISPLAY DEVICE

A display device is provided. The display device includes a substrate including a display area and a pad area, which is disposed on one side of the display area, a plurality of conductive layers disposed on the substrate, in the display area and the pad area, a passivation layer disposed on the conductive layers, and a plurality of light-emitting elements disposed on the passivation layer, in the display area, and spaced apart from one another, wherein at least one of the conductive layers includes a first metal layer, a second metal layer, which is disposed on the first metal layer, and a third metal layer, which is disposed on the second metal layer, the first metal layer includes vanadium (V), the second metal layer includes aluminum (Al) or an Al alloy, and the third metal layer includes V or titanium (Ti).

Semiconductor device and method for manufacturing the same

A semiconductor device includes a pixel electrode and a transistor which includes a first gate electrode, a first insulating layer over the first gate electrode, a semiconductor layer over the first insulating layer, a second insulating layer over the semiconductor layer, and a second gate electrode. The pixel electrode and the second gate electrode are provided over the second insulating layer. The first gate electrode has a region overlapping with the semiconductor layer with the first insulating layer provided therebetween. The second gate electrode has a region overlapping with the semiconductor layer with the second insulating layer provided therebetween. A first region is at least part of a region where the second gate electrode overlaps with the semiconductor layer. A second region is at least part of a region where the pixel electrode is provided. The second insulating layer is thinner in the first region than in the second region.

Light-emitting device with bendable light-emitting panel

A light-emitting device includes a strip-like high flexibility region and a strip-like low flexibility region arranged alternately in a direction. The high flexibility region includes a flexible light-emitting panel. The low flexibility region includes the light-emitting panel and a support panel having a lower flexibility than that of the light-emitting panel and overlapping with the light-emitting panel. It is preferable that the light-emitting panel include an external connection electrode and that a length in the direction of a low flexibility region A that overlaps with the external connection electrode be longer than a length in the direction of a low flexibility region B that is closest to the region A.

Display panel and display device

Provided are a display panel and a display device. A dummy electrode pattern is disposed in a first display region of the display panel and disposed in a different layer from a first connection trace. The first connection trace can connect a second light-emitting unit group in a second display region to a second pixel circuit group in the first display region through the dummy electrode pattern. An overlapping area between the dummy electrode pattern and the first connection trace is approximately the same as that between a first electrode and the first connection trace.

DISPLAY PANEL AND DISPLAY DEVICE

A display panel includes a pixel driving circuit, where the pixel driving circuit includes a driving transistor (T3) and a first transistor (T1), a first electrode of the first transistor (T1) is connected to a gate of the driving transistor (T3), a second electrode thereof is connected to a first initial signal line (Vinit1), the driving transistor (T3) is a P-type low temperature polysilicon transistor, and the first transistor (T1) is an N-type oxide transistor. The display panel further includes: a base substrate, a second conductive layer, a second active layer, a third conductive layer, and a fourth conductive layer.

Display apparatus, display panel and electronic apparatus

The present disclosure provides a display apparatus, a display panel and an electronic apparatus. The display apparatus comprises a display panel and a camera unit formed on a lower portion of the display panel, wherein the display panel includes a display area including a plurality of subpixels and a non-display area positioned on at least one side of the display area, the display area includes a first display area and a second display area overlapped with the camera unit, and the number of light emitting elements provided in a unit area of the first display area is greater than the number of light emitting elements provided in the unit area of the second display area.

PIXEL CIRCUIT, DRIVING METHOD AND DISPLAY DEVICE

A pixel circuit, a driving method and a display device. The pixel circuit includes a driving circuit, a first initialization circuit and a reset circuit; the first initialization circuit configured to write a first initial voltage into the first end of the driving circuit under the control of an initialization control signal; the reset circuit is configured to write a reset voltage into the second end of the driving circuit or the first end of the driving circuit under the control of a second scan signal; the driving circuit is configured to control to connect the first end of the driving circuit and the second end of the driving circuit under the control of a potential of a control end of the driving circuit.

Organic light-emitting diode display with external compensation and anode reset

A display pixel 22 that has a refresh rate and comprises a light-emitting diode 300 configured to emit light during an emission operation; a drive transistor 312 coupled in series with the light-emitting diode; a data loading transistor 316 coupled to the drive transistor, wherein the data loading transistor is used to perform a data loading operation; and an anode reset transistor 318 coupled to an anode of the light-emitting diode, wherein the anode reset transistor is used to perform anode reset operations to mimic high frequency refresh rates when the display pixel is operating at lower frequency refresh rates, to eliminate flicker. A first scan line 28-1 is configured to provide a first scan signal SCAN1 to a first switching transistor 314; a second scan line 28-2 is configured to provide a second scan signal SCAN2 to the data loading transistor 316; and a third scan line 28-3 is configured to provide a third scan signal SCAN3 to the anode reset transistor 318. The pixel is capable ...

Display substrate and preparation method therefor, and display device

A display substrate and a preparation method therefor, and a display device. The display substrate comprises: a base substrate, and a shift register unit, a first clock signal line and a second clock signal line that are provided on a peripheral region of the base substrate. The first clock signal line and the second clock signal line extend in the first direction. The shift register unit comprises a first control transistor, a second control transistor, and a third control transistor. An active layer of the first control transistor, an active layer of the second control transistor, and an active layer of the third control transistor respectively extend in the second direction. The active layer of the first control transistor, the active layer of the second control transistor, and the active layer of the third control transistor are located on the side of the first clock signal line and the second clock signal line close to a display region. The active layer of the first control transistor ...

도전 패턴 및 이를 포함하는 표시 장치

... 일 실시예에 따른 도전 패턴은 알루미늄을 포함하는 도전층, 상기 도전층 상에 배치되며, 티타늄을 포함하는 제1 캡핑층, 및 상기 제1 캡핑층 상에 배치되며, 질화 티타늄을 포함하는 제2 캡핑층을 포함하며, 상기 도전층과 상기 제1 캡핑층의 적어도 일부에 배치되며, 알루미늄과 티타늄이 혼합된 혼합 영역을 포함한다.

플렉서블 표시장치 및 이의 제조 방법

... 본 발명의 일 실시예는 기판, 상기 기판 상에 형성되는 게이트 절연막 및 상기 게이트 절연막의 상부에 형성되는 층간 절연막을 포함하며, 상기 게이트 절연막과 상기 층간 절연막 가운데 적어도 하나의 절연막의 상부면에는 배선 삽입부가 형성되는 플렉서블 표시 장치를 개시한다.

Display device and electronic device

A display device capable of improving image quality is provided. A display device includes a plurality of pixel blocks in a display region. The pixel blocks each include a first circuit and a plurality of second circuits. The first circuit has a function of adding a plurality of pieces of data supplied from a source driver. The second circuit includes a display element and has a function of performing display in accordance with the added data. One pixel has a configuration including one second circuit and an component of the first circuit that is shared. When the first circuit is shared by a plurality of pixels, the aperture ratio can be increased.

Display device and method of manufacturing the same

A display device includes a supporting substrate including a polymeric material, base substrate disposed on an upper surface of the supporting substrate, a pixel array disposed in a display area of the base substrate, a transfer wiring disposed in a bending area of the base substrate and electrically connected to the pixel array, and an organic filling portion disposed under the transfer wiring in the bending area. The base substrate includes an organic film including a polymeric material, and an inorganic barrier film overlapping the organic film and extending outwardly from an edge of the organic film. The organic filling portion contacts the organic film of the base substrate.

White organic light-emitting diode display substrate including switching TFT and light-shielding layer arranged to prevent negative drift

An OLED display substrate, a manufacturing method and a display device are provided. The OLED display substrate includes a base substrate and a plurality of pixel units arranged on the base substrate, each pixel unit includes a plurality of subpixel units, and each subpixel unit includes a switching TFT and a bottom-emission OLED, the OLED display substrate further includes a light-shielding layer arranged between the OLED and the switching TFT, and an orthogonal projection of the light-shielding layer onto the base substrate completely covers an orthogonal projection of a semiconductor region of the switching TFT onto the base substrate.

Display device

A display device includes: a substrate; a polycrystalline semiconductor layer which includes a first electrode, a channel, and a second electrode of a driving transistor disposed on the substrate; a first gate insulating layer disposed on the polycrystalline semiconductor layer; a gate electrode of the driving transistor which is disposed on the first gate insulating layer and overlaps the channel; a lower first scan line disposed on the first gate insulating layer; a second gate insulating layer disposed on the gate electrode and on the lower first scan line; a first lower boost electrode disposed on the second gate insulating layer; a first interlayer-insulating layer disposed on the first lower boost electrode; an oxide semiconductor layer disposed on the first interlayer-insulating layer and including a first upper boost electrode overlapping the first lower boost electrode; and a first connection electrode connecting the gate electrode and the first upper boost electrode.

Display panel

A display panel having a first display region and second display region is provided. The display panel includes a sub-pixel array that includes a plurality of sub-pixels in an array and distributed in the first display region and the second display region. A non-light-emitting region in the second display region has a greater light transmittance than a non-light-emitting region in the first display region. Among sub-pixels emitting a same color of the plurality of sub-pixels in the first display region and the second display region, a width-to-length ratio of a driving transistor in the pixel circuit of a sub-pixel in the second display region is greater than a width-to-length ratio of a driving transistor in the pixel circuit of a sub-pixel in the first display region.

FLEXIBLE DISPLAY PANEL AND FLEXIBLE ARRAY SUBSTRATE

A flexible display panel and a flexible array substrate are provided. The flexible display panel includes a flexible base and a thin film transistor. The thin film transistor includes an active layer, and the active layer is arranged on the flexible base. Open pores are formed in the active layer. The open pores penetrate through at least one part of the active layer.

Display apparatus including a groove disposed in the middle area while surrounding the first hole in the transmission area

A display apparatus includes a substrate including a transmission area having a first through hole, a display area surrounding the transmission area, and a middle area disposed between the transmission area and the display area, a pixel circuit disposed on the display area, the pixel circuit including a first thin film transistor including a first semiconductor layer having polycrystalline silicon, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor, a display element including a pixel electrode electrically connected to the pixel circuit, an opposite electrode disposed on the pixel electrode, and an intermediate layer disposed between the pixel electrode and the opposite electrode and including an emission layer, and a groove disposed in the middle area while surrounding the first through hole.

Display substrate, display panel and display device

The present disclosure relates to a display substrate, a display panel and a display device. The display substrate includes: a base substrate including a display area and a peripheral area surrounding the display area; a common electrode located in the peripheral area and surrounding the display area; a panel crack detection line located in the peripheral area and surrounding the display area, wherein the panel crack detection line is located on one side of the common electrode away from the display area; and at least one electrostatic discharge circuit located in the peripheral area, wherein the at least one electrostatic discharge circuit includes at least one first thin film transistor including an active layer, a gate, a source and a drain, the source and the drain are electrically connected to the panel crack detection line, and the gate is electrically connected to the common electrode.

Viewing angle switchable emission signal generating part and viewing angle switchable display device including the same

A display device with a switchable viewing angle includes a timing controller to generate an image data, a data control signal, and a gate control signal, a data driver to generate a data signal using the image data and the data control signal, a gate driver to generate a gate signal and first to third emission signals using the gate control signal, and a display panel including a plurality of subpixels to display an image using the data signal, the gate signal, and the first to third emission signals. The gate driver includes a gate signal generator to generate the gate signal, first emission signal generator to generate the first emission signal, and second and third emission signal generators to generate the second and third emission signals, respectively, using input and output signals of the gate signal generator and input and output signals of the first emission signal generator.

Display apparatus

A display apparatus, which may prevent a defect of a pixel due to external electrostatic discharge, includes: a first pixel including a first node; a second pixel neighboring the first pixel and including a second node; and an always-off thin-film transistor including a first electrode, a second electrode, and a gate electrode, the first electrode being connected to the first node of the first pixel, the second electrode being connected to the second node of the second pixel, in which a turn-off voltage is applied to the gate electrode.

DISPLAY PANEL

The present application provides a display panel. By arranging a plurality of sub-pixels in the display panel into the same pixel opening, the number of pixel openings in the display area can be reduced, and the number of ink droplets that can be sprayed in a single pixel opening can be increased, thereby the risk of color mixing of adjacent sub-pixels can be reduced, and at the same time, the number of times of inkjet printing can be reduced, the time of inkjet printing can be shortened, and the production efficiency can be improved.

Display device having first and second gates disposed on a first side of an active area and a pattern disposed on a second side of the active area

A display device including: a panel including pixels, a pixel including; an LED; a capacitor between a first voltage line and a node; a first transistor between the first voltage line and a first electrode of the LED; a second transistor between a data line and a source of the first transistor; a third transistor between the node and a drain of the first transistor; a fourth transistor between the node and a second voltage line; a fifth transistor between the first voltage line and the source of the first transistor; a sixth transistor between the first electrode and the drain of the first transistor; and a seventh transistor between the second voltage line and the first electrode, the third and fourth transistor including: an active area including metal oxide; first and second gates above the active area; and a pattern below the active area.

DISPLAY APPARATUS

A display apparatus in which a display area is expanded so that an image may be displayed even in an area where components are arranged is provided. The display apparatus includes a substrate including a first area in which a transmissive portion is located and a second area adjacent to the first area, a pixel circuit unit arranged in the first area and including a pixel circuit, a first pixel electrode arranged in the first area and electrically connected to the pixel circuit, the first pixel electrode having a first portion overlapping the pixel circuit unit and a second portion not overlapping the pixel circuit unit, and a metal pattern layer arranged between the substrate and the first pixel electrode and corresponding to the second portion.

LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 μm to about 2 μm, and a length of the channel of the third transistor is in a range of about 1 μm to about 2.5 μm.

Liquid crystal display device

A first transistor, a second transistor, a third transistor, a fourth transistor are provided. In the first transistor, a first terminal is electrically connected to a first wiring; a second terminal is electrically connected to a gate terminal of the second transistor; a gate terminal is electrically connected to a fifth wiring. In the second transistor, a first terminal is electrically connected to a third wiring; a second terminal is electrically connected to a sixth wiring. In the third transistor, a first terminal is electrically connected to a second wiring; a second terminal is electrically connected to the gate terminal of the second transistor; a gate terminal is electrically connected to a fourth wiring. In the fourth transistor, a first terminal is electrically connected to the second wiring; a second terminal is electrically connected to the sixth wiring; a gate terminal is connected to the fourth wiring.

유기 발광 표시 장치, 이의 제어 방법 및 컴퓨터 프로그램

... 본 발명의 일 실시예는 복수의 픽셀들을 포함하는 유기 발광 표시 장치에 있어서, 상기 복수의 픽셀들 각각은, 390nm 내지 450nm의 중심 파장을 갖는 제1 색상의 광을 방출하는 제1 서브 픽셀; 및 상기 제1 색상과 다른 제2 색상의 광을 방출하는 제2 서브 픽셀을 포함하는 유기 발광 표시 장치를 개시한다.

DISPLAY DEVICE AND ELECTRONIC DEVICE

A display device includes overlapping two display panels. The display panel on the upper side includes a first display region and a region that transmits visible light. The display panel on the lower side includes a second display region and a region that blocks visible light. The second display region overlaps with the region that transmits visible light. The region that blocks visible light overlaps with the first display region. The display panel on the lower side includes a third display region between the second display region and the region that blocks visible light. The gate signal and the source signal supplied to a first pixel in the third display region are the same as the gate signal and the source signal supplied to a second pixel in the second display region. The second pixel is closer to the first pixel than any other pixels included in the second display region.

Display device and electronic device

A display device capable of performing image processing is provided. Each pixel is provided with a memory circuit, and desired correction data is held in the memory circuit. The correction data is calculated in an external device and written into each pixel. The correction data is added to image data owing to capacitive coupling, and the resulting data is supplied to a display element. Thus, a corrected image can be displayed with the display element. The correction enables image upconversion or can compensate for an image quality reduction due to characteristics variations of transistors included in pixels.

Light emitting display device with a reduced coupling capacitance between the conductive wiring lines

A display device includes a substrate including a plurality of pixel areas including first, second, and third pixels, a first voltage line extending in a first direction on the substrate, a second voltage line extending in a second direction crossing the first direction on the first voltage line and connected to the first voltage line, a first electrode of each of the first, second, and third pixels being on the second voltage line to receive a driving current, a second electrode of each of the first, second, and third pixels and a third electrode of each of the first, second, and third pixels, the second and third electrodes being parallel to the first electrode and connected to the second voltage line, a first contact electrode of each of the first, second, and third pixels, the first contact electrode being on the first electrode and connected to the first electrode.

Display apparatus and electronic apparatus

A display apparatus according to the present disclosure includes: a pixel array unit, pixels being arranged in the pixel unit, the pixels each including a driving transistor that includes a plurality of gate electrodes and drives a light emitting unit in response to a video signal applied to one gate electrode of the plurality of gate electrodes; and a control unit that controls gate voltage of a different gate electrode of the driving transistor. Further, an electronic apparatus according to the present disclosure includes the display apparatus having the above-mentioned configuration.

DISPLAY PANEL

A display panel is provided. The display panel includes a base substrate, a plurality of subpixels. A respective subpixel includes a respective light emitting element and a respective pixel driving circuit. The respective pixel driving circuit includes a third transistor; and a storage capacitor including a first capacitor electrode in a first conductive layer and a second capacitor electrode in a second conductor layer. The second conductive layer is on a side of the first conductive layer away from the base substrate. The second capacitor electrode includes an extension extending away from an electrode main body of the second capacitor electrode. An orthographic projection of the extension on the base substrate at least partially overlaps with an orthographic projection of an active layer of the third transistor of the respective pixel driving circuit on the base substrate.

DISPLAY PANEL AND METHOD OF MANUFACTURING SAME, AND DISPLAY DEVICE

A display panel, a method of manufacturing the same, and a display device are disclosed. Each of a first metal layer and a third metal layer of the display panel is formed by patterning a composite metal layer. A photolithography process is performed on the composite metal layer to form a first plate of a storage capacitor in a light-emitting area. A second plate of the storage capacitor is formed in the light-emitting area at the same time as a transparent oxide semiconductor layer is processed. Each of the first plate and the second plate is a transparent conductive film, so that a problem of low aperture ratios with current bottom-emission type active-matrix organic light-emitting diode (AMOLED) devices can be alleviated.

DISPLAY APPARATUS

A display apparatus can include a first thin-film transistor including a first active layer having a first polysilicon material, a first gate electrode overlapping the first active layer, a first electrode and a second electrode; a second thin-film transistor including a second active layer having an oxide semiconductor, a second gate electrode overlapping the second active layer, a third electrode and a fourth electrode; and a first emitting electrode of a light emitting element electrically connected to the second electrode of the first thin-film transistor. Also, one end of the first active layer having the first polysilicon material is electrically connected to one or the other end of the second active layer having the oxide semiconductor.

ORGANIC LIGHT EMITTING DIODE DISPLAY

An exemplary embodiment provides an organic light emitting diode display including a substrate, a bridge electrode disposed on the substrate, a buffer layer which covers the bridge electrode, a semiconductor layer disposed on the buffer layer, a first gate insulating layer which covers the semiconductor layer in a plan view, a first gate conductor disposed on the first gate insulating layer and which includes a first gate electrode, a second gate insulating layer which covers the first gate conductor, a second gate conductor disposed on the second gate insulating layer, an interlayer-insulating layer which covers the second gate conductor, and a data line disposed on the interlayer-insulating layer. The first gate electrode is directly connected to the bridge electrode, the semiconductor layer is electrically connected to the bridge electrode, and a capacitance exists between the data line and the bridge electrode.

DISPLAY DEVICE

A display device includes: a substrate including: a first area; a second area at least partially surrounding the first area; and a third area at least partially surrounding the second area; first display elements at the first area, each of the first display elements including a first pixel electrode; second display elements at the first area, each of the second display elements including a second pixel electrode; third display elements at the first area, each of the third display elements including a third pixel electrode; and a first connection line electrically connecting the first display elements to each other. The first connection line overlaps with at least a portion of the second pixel electrode, and at least a portion of the third pixel electrode.

Display device having multiple transistors

Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. A second source electrode of the second thin-film transistor and a second gate electrode of the second thin-film transistor overlap each other with an upper interlayer insulation film interposed therebetween so as to form a first storage capacitor.

Color transformation filter and display device including the same

Provided is a color transformation filter including a plurality of nanostructures included in a subpixel and spaced apart from each other, the plurality of nanostructures having a first refractive index, a low refractive index layer provided adjacent to the plurality of nanostructures, the low refractive index layer having a second refractive index less than the first refractive index, and a color transformation element included in the low refractive index layer.

DISPLAY DEVICE

A display device includes a first substrate including a display area having a plurality of pixels, and a non-display area surrounding the display area, the first substrate being made of one of transparent conducting oxide and oxide semiconductor; an inorganic layer on the first substrate; a planarization layer on the inorganic layer; a bonding layer on the inorganic layer and the planarization layer; and a second substrate on the bonding layer. The planarization layer includes a first planarization layer overlapping the first substrate in a plan view, and a second planarization layer surrounding a side surface of the first planarization layer.

DISPLAY PANEL AND DISPLAY DEVICE

A display panel and a display device both include a first active layer disposed on a substrate and including a channel area, a first area positioned on a first side of the channel area, and a second area positioned on a second side of the channel area, a first conductor on the first area, a second conductor on the second area, and a first auxiliary electrode on the first conductor, wherein an area where the first auxiliary electrode is disposed includes a repair area, thereby facilitating to repair a subpixel while mitigating or minimizing instantaneous ghosting on panel.

Polishing head, substrate processing apparatus including the same and processing method of substrate using the same

A substrate processing apparatus includes: a conveyor belt configured to have an outer surface on which a bottom surface of a substrate is seated; and a polishing head unit configured to face an upper surface of the substrate, wherein the polishing head unit includes: a polishing head connected to a driver; a polishing pad configured to face the polishing head; a polishing pad fixing ring disposed between the polishing head and the polishing pad; and a temperature sensor configured to overlap the polishing pad fixing ring and to be spaced apart from the polishing pad fixing ring.

DISPLAY PANEL AND DISPLAY DEVICE

A display panel has a main display region and a functional device region, and the main display region is located at at least part of sides of the functional device region. The display panel includes a plurality of first pixel circuits and a plurality of redundant pixel circuits. The plurality of first pixel circuits are located in the main display region. The display panel includes an active layer and an anode layer. The plurality of redundant pixel circuits include at least a column of redundant pixel circuits arranged in a second direction, and the column of redundant pixel circuits is located between the functional device region and a column of first pixel circuits. A redundant pixel circuit includes at least redundant active layer patterns located in the active layer, and the redundant pixel circuit is electrically insulated from the anode layer.

LIGHT EMITTING DISPLAY DEVICE

A light emitting display device can include a first planarization layer on a substrate, a nano-based layer having a plurality of nano particles on the first planarization layer, a first buffer layer on the nano-based layer, a reflective layer on the first buffer layer, a second planarization layer on the reflective layer, and a light emitting element on the second planarization layer.

DISPLAY DEVICE

표시 장치 및 전자 기기

... 넓은 계조를 표시하는 데에 적합한 표시 장치를 제공한다. 2개의 구동 트랜지스터와, 발광 디바이스를 화소에 가지는 표시 장치이고, 2개의 구동 트랜지스터 및 발광 디바이스는 직렬로 접속된다. 한쪽의 트랜지스터는 p채널형이고, 다른 쪽의 트랜지스터는 n채널형이고, 전환하여 구동시킨다. 상기 구성으로 함으로써, 고계조 표시를 수행할 때의 게이트-소스 간 전압의 변동을 억제할 수 있다. 또한 n채널형 트랜지스터로서, 금속 산화물을 채널 형성 영역에 가지는 트랜지스터를 사용함으로써, 저계조 표시를 수행할 때의 표시 특성을 높일 수 있다.

ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE

An organic light emitting diode display includes a driving transistor and a compensation transistor. The driving transistor includes a fist gate electrode disposed on a substrate, a polycrystalline semiconductor layer disposed on the first gate electrode of the driving transistor and including a first electrode, a second electrode, and a channel, and a second gate electrode disposed on the polycrystalline semiconductor layer of the driving transistor. The compensation transistor includes a polycrystalline semiconductor layer including a first electrode, a second electrode, and a channel, and a gate electrode disposed on the polycrystalline semiconductor layer of the compensation transistor.

DISPLAY APPARATUS

A display apparatus may include a substrate having a first bending area between a first area and a second area, the first bending area to be bent with a first bending axis that extends along a first direction, as a center; a first inorganic insulating layer on the substrate and having a first opening corresponding to the first bending area; a first organic material layer filling at least a portion of the first opening; and a first conductive layer that extends from the first area to the second area through the first bending area and is on the first organic material layer. The first organic material layer may have a concavo-convex surface at least in a portion of an upper surface thereof. At least a portion of the first conductive layer may extend along a third direction forming an angle of about 0° to about 90° with the first direction.

Display panel and display device

A display panel and a display device are provided. The display panel has a display area. The display panel includes: a base substrate; a driving circuit and at least one signal line on the base substrate; and at least one insulating layer between the driving circuit and the at least one signal line. The driving circuit is disposed in a periphery of the display area; and an orthogonal projection of at least one of the signal lines on the base substrate has an overlapping area with an orthogonal projection of the driving circuit on the base substrate.

AT-SPEED TEST ACCESS PORT OPERATIONS

In some examples, an integrated circuit comprises: a TDI input, a TDO output, a TCK input and a TMS input; a TAP state machine (TSM) having an input coupled to the TCK input, an input coupled to the TMS input, an instruction register control output, a TSM data register control (DRC) output, and a TSM state output; an instruction register having an input coupled to the TDI input, an output coupled to the TDO output, and a control input coupled to the instruction register control output of the TAP state machine; router circuitry including a TSM DRC input coupled to the TSM DRC output, a control DRC input coupled to the TSM state output, and a router DRC output; and a data register having an input coupled to the TDI input, an output coupled to the TDO output, and a data register DRC input coupled to the router DRC output.

DISPLAY DEVICE

A display device including: a substrate; first, second, and third data lines extending in a first direction on the substrate and disposed to be adjacent along a second direction crossing the first direction; a semiconductor layer disposed on the first, second, and third data lines; a first insulating layer disposed on the semiconductor layer; first, second, and third lower storage electrodes disposed on the first insulating layer and arranged to be adjacent along the first direction; a second insulating layer disposed on the first, second, and third lower storage electrodes; a first scan line extending in the second direction on the second insulating layer; a first pixel connected to the first scan line and the first data line; a second pixel connected to the first scan line and the second data line; and a third pixel connected to the first scan line and the third data line.

Area Sensor and Display Apparatus Provided With An Area Sensor

An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.

Light emitting device

A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

Organic light-emitting display device and method of manufacturing the same

Disclosed is a method of manufacturing an organic light-emitting display device capable of improving efficiency of a laser generator used for crystallization of amorphous silicon. The method crystallizes amorphous silicon selectively to provide an organic light-emitting display device that includes channel area of a pixel contains polycrystalline silicon and storage area of the pixel contains amorphous silicon.

Method for designing semiconductor device

A semiconductor device may be designed in the following manner. A stacked layer of a silicon oxide film and an organic film is provided over a substrate, deuterated water is contained in the organic film, and then a conductive film is formed in contact with the organic film. Next, an inert conductive material that does not easily generate a deuterium ion or a deuterium molecule is selected by measuring the amount of deuterium that exists in the silicon oxide film.

Light emitting device and electronic device

A light emitting device includes: a light emitting element including a first electrode, a second electrode opposed to the first electrode, and a light emitting layer provided between the first electrode and the second electrode; a capacitor having a third electrode formed in a position overlapping the light emitting element and an insulating layer provided between the first and third electrodes; a first drive transistor disposed on a first side of the first electrode and having a gate electrode; and a second drive transistor disposed on a second side of the first electrode and having a gate electrode connected to the gate electrode of the first drive transistor via the third electrode.

Organic light emitting diode display device and method of manufacturing the same

An organic light emitting diode display device and a method of manufacturing the same are disclosed. The organic light emitting diode display device comprises: a substrate; an active layer disposed on the substrate; a first insulating layer disposed on the active layer; a gate electrode disposed on the first insulating layer; a pixel electrode disposed on the first insulating layer; source and drain electrodes electrically insulated from the gate electrode and electrically connected to the active layer; an intermediate layer disposed on the pixel electrode, wherein the intermediate layer comprises an organic emission layer; and an opposite electrode disposed on the intermediate layer, wherein the pixel electrode is connected to the source electrode or the drain electrode, wherein the gate electrode comprises a first conductive layer, a second conductive layer, a third conductive layer, and a fourth conductive layer that are sequentially stacked, and wherein the second and third conductive layers comprises a first oxidation-reduction potential difference therebetween, and the first and third conductive layers comprises a second oxidation-reduction potential difference therebetween, and the first oxidation-reduction potential difference is less than the second oxidation-reduction potential difference.

Display panel apparatus and method of fabricating display panel apparatus

A display panel apparatus includes a planarizing film formed on a substrate, at least one pixel including a lower electrode; an organic EL layer; and an upper electrode which are formed above the planarizing film; an auxiliary electrode electrically connected to the upper electrode which is the opposite to the lower electrode; a display section including a plurality of the pixels; an electrode plate electrically connected to the auxiliary electrode and arranged to cover the planarizing film outside the display section, and the electrode plate has a hole exposing a part of a surface of the planarizing film. Furthermore, the display panel apparatus also includes a hole injection layer which is an inorganic material layer made of an inorganic material and covering the hole.

Display Device

There is provided an active matrix EL display device that can display a clear multi gray-scale color display to reduce the shift in the potential caused by the potential drop due to the wiring resistance of a power source supply line, in order to decrease the unevenness in a display region. A plurality of drawing out ports of the power source supply line are arranged. Further, in the wiring resistance between the external input terminal and the pixel portion power source supply line, potential compensation is performed by supplying potential to the power source supply line by a feedback amplifier. Further, in addition to above structure, the power source supply line may be arranged in a matrix.

Organic light emitting display device, driving method thereof, and manufacturing method thereof

An organic light emitting diode (OLED) display with improved long range uniformity is disclosed. The OLED display includes an OLED, a first transistor for transmitting a data signal of a voltage level in response to a current scan signal, a second transistor for generating a driving current of the OLED according to the data signal of the voltage level transmitted by the first transistor, a first capacitor for storing the data signal of the voltage level transmitted to the second transistor, and a second capacitor for shielding parasitic capacitor between a gate electrode of the second transistor and a cathode of the OLED.

Organic light-emitting display device and method of manufacturing the same

The organic light-emitting display device includes: a substrate including a transistor region; and a thin-film transistor formed over the transistor region of the substrate and having a planarization film which is disposed over a source/drain electrode and a pixel defining layer which includes an aperture exposing a portion of a first electrode electrically connected to the source/drain electrode and defining a pixel region, wherein an outgassing hole is formed in a region of the pixel defining layer other than the aperture to expose the planarization film.

Thin film transistor array panel

A thin film transistor array panel includes: an substrate; a gate line positioned on the substrate; a data line intersecting the gate line; a thin film transistor connected to the gate line and the data line; a gate insulating layer between the gate electrode of the thin film transistor and the semiconductor of the thin film transistor; a pixel electrode connected to the thin film transistor; and a passivation layer positioned between the pixel electrode and the thin film transistor, wherein at least one of the gate insulating layer and the passivation layer includes a silicon nitride layer, and the silicon nitride layer includes hydrogen content at less than 2×10 22 cm 3 or 4 atomic %.

Display device and method for manufacturing thereof

An object is to provide a system-on-panel display device including a display portion and a peripheral circuit for controlling display on the display portion over one substrate, which can operate more accurately. The display device has a display portion provided with a pixel portion including a plurality of pixels and a peripheral circuit portion for controlling display on the display portion, which are provided over a substrate. Each of the display portion and the peripheral circuit portion includes a plurality of transistors. For semiconductor layers of the transistors, single crystal semiconductor materials are used.

Display device and electronic apparatus

A sampling transistor in embodiments of the present invention is kept at the on-state with a time width shorter than one horizontal cycle, during the period from the rising of a control pulse supplied from a scanner to the falling of the control pulse, and samples a video signal Vsig from a signal line SL to write the video signal Vsig to a hold capacitor. A sampling transistor T 1 has a double gate structure in which a pair of transistor elements are connected in common. This suppresses change in the threshold voltage of the sampling transistor.

Organic electroluminescent display device

An organic electroluminescent display device including a plurality of scan lines and a plurality of data lines crossing the scan lines, a plurality of pixels at regions defined by the scan lines and the data lines, and one or more thin-film transistors (TFTs) for selectively applying voltages to each of the pixels, wherein the data lines are successively located at a side of the pixels, and a first TFT of the TFTs is located at least partially between an area corresponding to an n th data line of the data lines and an area corresponding to an (n−1) th data line of the data lines, the n th data line and the (n−1) th data line being successively positioned.

Semiconductor device

Solved is a problem of attenuation of output amplitude due to a threshold value of a TFT when manufacturing a circuit with TFTs of a single polarity. In a capacitor ( 105 ), a charge equivalent to a threshold value of a TFT ( 104 ) is stored. When a signal is inputted thereto, the threshold value stored in the capacitor ( 105 ) is added to a potential of the input signal. The thus obtained potential is applied to a gate electrode of a TFT ( 101 ). Therefore, it is possible to obtain the output having a normal amplitude from an output terminal (Out) without causing the amplitude attenuation in the TFT ( 101 ).

Thin film transistor, organic luminescence display including the same, and method of manufacturing the organic luminescence display

A thin film transistor (TFT) including a substrate; a gate electrode formed over the substrate, an active layer insulated from the gate electrode by using a gate insulation film; an etch stop layer which is formed over the active layer and includes first and second holes for exposing the active layer; a first electrode; and a second electrode including a first part and a second part. The first part is formed over the etch stop layer, and the second part is received in the second hole, contacts the active layer directly, and connects the first part to the active layer. At least one portion of the first part of the second electrode overlaps with the gate electrode. The second part of the second electrode does not overlap with and is separated from the gate electrode.

EL Display device and Method for Manufacturing the Same

Plurality of pixels ( 102 ) are arranged on the substrate. Each of the pixels ( 102 ) is provided with an EL element which utilizes as a cathode a pixel electrode ( 105 ) connected to a current control TFT ( 104 ). On a counter substrate ( 110 ), a light shielding film ( 112 ) is disposed at the position corresponding to periphery of each pixel ( 102 ), while a color filter ( 113 ) is disposed at the position corresponding to each of the pixels ( 102 ). This light shielding film makes the contour of the pixels clear, resulting in an image display with high definition. In addition, it is possible to fabricate the EL display device of the present invention with most of an existing manufacturing line for liquid crystal display devices. Thus, an amount of equipment investment can be significantly reduced, thereby resulting in a reduction in the total manufacturing cost.

Organic light-emitting display apparatus and method of manufacturing the same

An organic light-emitting display apparatus including: a substrate; a thin-film transistor (TFT) formed on the substrate and including a gate electrode, a source electrode, a drain electrode, and an active layer; a first electrode formed on the substrate and electrically connected to the drain electrode; an intermediate layer formed on the first electrode and including an organic light-emitting layer; a second electrode formed on the intermediate layer; and an insertion layer formed between the first electrode and the intermediate layer and including an oxide.

Display device

A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

Display apparatus, method of manufacturing display apparatus, and electronic apparatus

A display apparatus includes a plurality of pixels each including an electro-optic element, a writing transistor writing a video signal into the pixel, a holding capacitor holding the video signal written by the writing transistor, and a driving transistor driving the electro-optic element based on the video signal held in the holding capacitor. The driving transistor includes a channel region, a gate electrode disposed opposite to the channel region, a first source/drain region closer to a power source, a second source/drain region closer to the electro-optic element, and impurity regions disposed between the channel region and the first and second source/drain regions and having a lower concentration than that of the corresponding source/drain region. The impurity region disposed between the channel region and the first source/drain region is formed in a region other than a region facing the gate electrode.

Display and electronic unit

There are provided a display and an electronic unit capable of enhancing visibility. The display includes: a plurality of pixels each including a light-emission device, and having a light-transmission region in at least a part thereof; and one or more transmittance control devices capable of controlling a transmittance of incident light.

Display devices and methods of manufacturing display devices

A display device includes a gate line, a switching device, a first electrode, an organic light emitting structure and a second electrode. The gate line may include a first conductive layer pattern and a second conductive layer pattern. The first conductive layer pattern may extend along a first direction and the second conductive layer pattern may extend along a second direction. The switching device may be connected to the gate line. The first electrode may be electrically connected to the switching device. The organic light emitting structure may be disposed on the first electrode. The second electrode may be disposed on the organic light emitting structure.

Display device, thin-film transistor used for display device, and method of manufacturing thin-film transistor

A display device including a display element and a thin-film transistor for controlling light emission from the display element. The thin-film transistor includes: a gate electrode formed on an insulating support substrate; a gate insulating film formed on the substrate so as to cover the gate electrode; a channel layer formed on the gate insulating film; a channel protective layer formed on the top surface of the channel layer; a pair of contact layers formed on the top surface of the channel protective layer and connected to the channel layer; and a source electrode and a drain electrode each connected to the pair of contact layers. The pair of contact layers has an interface contacting the side surface of the channel layer.

Thin film transistor array substrate, organic light emitting display device including the same, and manufacturing method of the thin film transistor array substrate

A thin film transistor array substrate includes a thin film transistor on a substrate, the thin film transistor including an active layer, a gate electrode, a source electrode, and a drain electrode; a capacitor including a lower electrode in a same layer as the active layer and an upper electrode in a same layer as the gate electrode; a pixel electrode in a same layer as the gate electrode and the upper electrode; a first insulation layer between the active layer and the gate electrode and between the lower electrode and the upper electrode; a second insulation layer on the first insulation layer, a protection layer extending along side surfaces of the lower electrode, and a third insulation layer on the protection layer and exposing the pixel electrode.

Thin-film transistor array device, el display panel, el display device, thin-film transistor array device manufacturing method, el display panel manufacturing method

A thin-film transistor array includes first and second bottom-gate transistors, a passivation film, a conductive oxide film below the passivation film, and a relay electrode between a first conductive material in a same layer as a first electrode of the first transistor and a second conductive material in an electroluminescence layer. A first line is in a layer lower than the passivation film and a second line is above the passivation film. A terminal to which an external signal is input is provided in a periphery of the substrate in the same layer as the first electrode. The conductive oxide film covers an upper surface of the terminal and is between the relay electrode and the first conductive material. The relay electrode is formed in a same layer and comprises a same material as the second line.

Light Emitting Device

The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.

Light Emitting Device and Method for Manufacturing the Same

When attaching a substrate with an EL element formed thereon and a transparent sealing substrate, the periphery of a pixel portion is surrounded with a first sealing agent that maintains a gap between the two pieces of substrates, an entire surface of the pixel portion is covered with a second transparent sealing agent so that the two pieces of substrate is fixed with the first sealing agent and the second sealing agent. Consequently, the EL element can be encapsulated by curing the first sealing agent and the second sealing agent without enclosing a drying agent and doing damage to the EL element due to UV irradiation even when a sealing device only having a function of UV irradiation is used.

Organic electro luminescence display

An organic electro luminescence display is disclosed. In one embodiment, the display includes a substrate, an organic light emitting diode disposed on the substrate and including a pixel electrode, an organic light emitting layer, and a common electrode, a scan interconnection disposed on the substrate and providing a scan signal to the organic light emitting diode. The display may further include a data interconnection disposed on the substrate and providing a data signal to the organic light emitting diode, and a power interconnection disposed on the substrate and providing a power to the organic light emitting diode. The common electrode has an opening which overlaps with at least a portion of the scan interconnection, the data interconnection, and the power interconnection.

Method of manufacturing substrate including thin film transistor

A substrate including a thin film transistor, the substrate including an active layer disposed on the substrate, the active layer including a channel area and source and drain areas, a gate electrode disposed on the active layer, the channel area corresponding to the gate electrode, a gate insulating layer interposed between the active layer and the gate electrode, an interlayer insulating layer disposed to cover the active layer and the gate electrode, the interlayer insulating layer having first and second contact holes partially exposing the active layer, source and drain electrodes disposed on the interlayer insulating layer, the source and drain areas corresponding to the source and drain electrodes, and ohmic contact layers, the ohmic contact layers being interposed between the interlayer insulating layer and the source and drain electrodes, and contacting the source and drain areas through the first and second contact holes.

Double gate thin-film transistor and oled display apparatus including the same

A double gate thin-film transistor (TFT), and an organic light-emitting diode (OLED) display apparatus including the double gate TFT, includes a double gate thin-film transistor (TFT) including: a first gate electrode on a substrate; an active layer on the first gate electrode; source and drain electrodes on the active layer; a planarization layer on the substrate and the source and drain electrodes, and having an opening corresponding to the active layer; and a second gate electrode in the opening.

Method for manufacturing semiconductor device

It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.

Method of fabricating organic light emitting diode display device

An organic light emitting diode display device and a method of manufacturing thereof, the device including a substrate, the substrate including a pixel part and a circuit part; a first semiconductor layer and a second semiconductor layer on the pixel part of the substrate; a gate insulating layer on an entire surface of the substrate; gate electrodes on the gate insulating layer, the gate electrodes corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrodes, the source/drain electrodes being connected to the first and second semiconductor layers, respectively; a first electrode connected to the source/drain electrodes of the first semiconductor layer; an organic layer on the first electrode; a second layer on the organic layer; and a metal catalyst layer under the first semiconductor layer.

Semiconductor device and method for manufacturing the same

One object is to provide a semiconductor device with a structure which enables reduction in parasitic capacitance sufficiently between wirings. In a bottom-gate type thin film transistor including a stacked layer of a first layer which is a metal thin film oxidized partly or entirely and an oxide semiconductor layer, the following oxide insulating layers are formed together: an oxide insulating layer serving as a channel protective layer which is over and in contact with a part of the oxide semiconductor layer overlapping with a gate electrode layer; and an oxide insulating layer which covers a peripheral portion and a side surface of the stacked oxide semiconductor layer.

Active matrix dilute source enabled vertical organic light emitting transistor

Various embodiments are provided for dilute source enabled vertical organic light emitting transistors. In various embodiments, a display panel includes an array of pixels. In one embodiment, among others, at least one pixel includes a switching transistor and a driving transistor coupled to the switching transistor, where the driving transistor is configured to emit light responsive to activation by the switching transistor. The driving transistor may be a dilute source enabled vertical organic light emitting transistor (DS-VOLET). The switching transistor may include a dilute source enabled vertical-field effect transistor (DS-VFET). In another embodiment, a double dilute source enabled vertical-field effect transistor (DS-VFET) includes a first DS-VFET coupled to a second DS-VFET.

Display device

Disclosed is a display device and an electronic apparatus incorporating the display device. The display device includes a transistor and a planarization film over the transistor. The planarization film has an opening where an edge portion is rounded. The display device further includes a first electrode over the planarization film and an organic resin film over the first electrode. The organic resin film also has an opening where an edge portion is rounded. The organic resin film is located in the opening of the planarization film. The first electrode and the transistor are electrically connected to each other through a conductive film. The first electrode is in contact with a top surface of the conductive film. Over the first electrode, a light-emitting member and a second electrode are provided.

Organic compound, organic electroluminescence element, and image display device

The present invention provides an organic electroluminescence element having a high luminous efficiency. An organic electroluminescence element includes an anode, a cathode, and at least one organic compound layer disposed between the anode and the cathode, wherein at least one of the at least one the organic compound layer contains an organic compound shown in Claim 1.

Organic light emitting diode display device and method of fabricating the same

An organic light emitting diode (OLED) display device and a method of fabricating the same are disclosed. The OLED display device includes a plurality of scan lines, a plurality of data lines, and a plurality of pixels disposed in a region in which the scan lines cross the data lines, where each pixel of the plurality of pixels includes: a switching transistor including a first gate electrode, a first semiconductor layer disposed over the first gate electrode, a first gate insulating layer interposed between the first gate electrode and the first semiconductor layer, a first source electrode and a first drain electrode, a driving transistor including a second semiconductor layer, a second gate electrode disposed over the second semiconductor layer, a second gate insulating layer interposed between the second gate electrode and the second semiconductor layer, a second source electrode and a second drain electrode, and an organic light emitting diode electrically connected with the second source and second drain electrodes of the driving transistor, where the first and second semiconductor layers are formed of the same material, and from the same processing.

Thin film transistor substrate and display

An embodiment of the invention provides a thin film transistor substrate includes: a substrate; and a plurality of transistors, wherein each of the transistors includes a gate electrode disposed on the substrate; a first diffusion barrier layer disposed on the substrate and covering an upper surface and a ring sidewall of the gate electrode; a gate insulating layer disposed on the first diffusion barrier layer; an active layer disposed on the gate insulating layer and over the gate electrode; a source electrode disposed on the substrate and electrically connected to the active layer; a drain electrode disposed on the substrate and electrically connected to the active layer; and a protective layer covering the source electrode and the drain electrode.

Organic light emitting diode display and method for manufacturing an organic light emitting diode display

An OLED display is disclosed which included gate wires provided on a substrate and extended in a first direction, data wires provided on the gate wires and extended in a second direction that crosses the first direction; a pixel circuit including first thin film transistors respectively connected to the gate wires and the data wires; and an organic light emitting diode connected to the pixel circuit. The thin film transistor includes a first active layer provided on the substrate to connect the data wires and the organic light emitting diode, and includes a channel area, a source area, and a drain area. The source area and the drain area doped with an impurity and a first gate electrode is not doped with the impurity and provided on the first active layer, interposing sequentially layered first and second insulation layers therebetween.

Electro-optical device and electronic device

An object of the present invention is to provide an EL display device having a high operation performance and reliability. The switching TFT 201 formed within a pixel has a multi-gate structure, which is a structure which imposes an importance on reduction of OFF current value. Further, the current control TFT 202 has a channel width wider than that of the switching TFT to make a structure appropriate for flowing electric current. Morever, the LDD region 33 of the current control TFT 202 is formed so as to overlap a portion of the gate electrode 35 to make a structure which imposes importance on prevention of hot carrier injection and reduction of OFF current value.

Thin film transistor array and el display employing thereof

An EL display has a luminescence unit having a luminescence layer being disposed between the pair of electrodes, and a transistor array unit controlling the luminescence of the luminescence unit. An interlayer insulating film is disposed between the luminescence unit and the transistor array unit. An electrode of the luminescence unit is connected electrically to the transistor array unit via a contact hole provided in the interlayer insulation film. The transistor array unit has a wiring component made of copper or copper alloy. The wiring component has a lower layer pattern made of copper or copper alloy, and an upper layer pattern made of metal material different from that for the lower layer pattern. The upper layer pattern covers the upper surface and the side surface of the lower layer pattern.

Method for manufacturing light emitting device, and light emitting device

A method for manufacturing a light-emitting device, comprising: forming, over a substrate, a plurality of multilayered light-emitting structures each including a first electrode, a light-emitting layer, and a second electrode; forming, in the substrate, a plurality of grooves that surround the multilayered light-emitting structures individually; forming, over the substrate, a sealing film that covers the multilayered light-emitting structures and the grooves; and separating the multilayered light-emitting structures from one another after forming the sealing film, by cutting the substrate such that, in each groove, part of the sealing film covering a given inner side surface of the groove remains, the given inner side surface being adjacent to any of the multilayered light-emitting structures.

Display device and method for manufacturing the same

A display device includes a substrate, a first conductive film pattern including a gate electrode and a first capacitor electrode on the substrate, a gate insulating layer pattern on the first conductive film pattern, a polycrystalline silicon film pattern including an active layer and a second capacitor electrode on the gate insulating layer pattern, an interlayer insulating layer on the polycrystalline silicon film pattern, a plurality of first contact holes through the gate insulating layer pattern and the interlayer insulating layer to expose a portion of the first conductive film pattern, a plurality of second contact holes through the interlayer insulating layer to expose a portion of the polycrystalline silicon film pattern, and a second conductive film pattern including a source electrode, a drain electrode, and a pixel electrode on the interlayer insulating layer.

Method for fabricating thin-film semiconductor device and thin-film semiconductor device

A thin-film semiconductor device having two thin-film transistors, wherein each of the two thin-film transistors includes: a gate electrode; a gate insulating film; a semiconductor layer; a channel protection layer; an intrinsic semiconductor layer; a contact layer in contact with a portion of sides of the channel region; a source electrode on the contact layer; and a drain electrode opposite to the source electrode on the contact layer, wherein the contact layer of one of the two thin-film transistors has a conductivity type different from a conductivity type of the contact layer of the other of the two thin-film transistors.

Semiconductor device

Solved is a problem of attenuation of output amplitude due to a threshold value of a TFT when manufacturing a circuit with TFTs of a single polarity. In a capacitor ( 105 ), a charge equivalent to a threshold value of a TFT ( 104 ) is stored. When a signal is inputted thereto, the threshold value stored in the capacitor ( 105 ) is added to a potential of the input signal. The thus obtained potential is applied to a gate electrode of a TFT ( 101 ). Therefore, it is possible to obtain the output having a normal amplitude from an output terminal (Out) without causing the amplitude attenuation in the TFT ( 101 ).

Pixel, organic light display device having the pixel, and driving method of the organic light emitting display device

An organic light emitting display includes a plurality of pixels. Each pixel includes an organic light emitting diode, a first driver, and a second driver. The first driver supplies a predetermined current to the OLED based on a current data signal or first data signal. The second driver is coupled between the first driver and OLED, and controls the coupling between the first driver and OLED based on a second data signal.

Active matrix substrate and method for manufacturing same

An active matrix substrate includes a first TFT and a second TFT, each of TFTs includes an oxide semiconductor layer and a gate electrode arranged on a part of the oxide semiconductor layer with a gate insulating layer therebetween, in which in the first TFT, the oxide semiconductor layer, in a first region covered with the gate electrode with the gate insulating layer interposed between the oxide semiconductor layer and the gate electrode, has a layered structure including a lower oxide semiconductor film and an upper oxide semiconductor film throughout and a mobility of the upper oxide semiconductor film is higher than a mobility of the lower oxide semiconductor film, and in the second TFT, in at least a part of a first region of the oxide semiconductor layer, of the lower oxide semiconductor film and the upper oxide semiconductor film, one oxide semiconductor film is provided, and another oxide semiconductor film is not provided.

Display device having multiple protective films and wiring layer

According to one embodiment, a display device includes a pixel area including pixels each including at least one thin film transistor includes a semiconductor layer and a gate electrode, a first terminal area including a first wiring line disposed thereon connected to the at least one thin film transistor, a first protective film provided on the semiconductor layer, the gate electrode and the first wiring line, a first insulating film provided on the first protective film, a second protective film provided on the first insulating film, a second insulating film provided on the second protective film, a first opening formed in the first terminal area, and partially exposing the first wiring line, and a second opening formed to correspond to the first opening.

Organic light emitting display device

An organic light emitting display device includes a substrate including a pixel region and a non-pixel region; a first electrode over the substrate in the pixel region; an organic emitting layer over the first electrode in the pixel region; a bank over the substrate in the non-pixel region; an auxiliary conductive line covered by the bank in the non-pixel region, a thickness of the auxiliary line larger than a thickness of the first electrode; and a second electrode on the organic emitting layer in the pixel region and on the bank in the non-pixel region, the second electrode electrically connected to the auxiliary conductive line.

Tft array substrate

A display device includes a plurality of pixels, first to nth scanning lines, and a first semiconductor film. The plurality of pixels is arranged in first to nth rows and first to mth columns. The first to nth scanning lines are electrically connected to the pixels in the respective first to nth rows. The first semiconductor film overlaps with at least one of first to kth scanning lines. A display region has a cutoff intersecting the first to nth rows, and the first semiconductor film is located in the cutoff. Each of the plurality of pixels includes a light-emitting element (OLED) and a transistor electrically connected to the OLED and having a second semiconductor film. The first semiconductor film and the second semiconductor film exist in the same layer. n and m are each a natural number larger than 1, and k is a natural number smaller than n.

Display device, electronic apparatus, and method of fabricating the display device

It is an object of the invention to provide a technique to manufacture a display device with high image quality and high reliability at low cost with high yield. The invention has spacers over a pixel electrode layer in a pixel region and over an insulating layer functioning as a partition which covers the periphery of the pixel electrode layer. When forming a light emitting material over a pixel electrode layer, a mask for selective formation is supported by the spacers, thereby preventing the mask from contacting the pixel electrode layer due to a twist and deflection thereof. Accordingly, such damage as a crack by the mask does not occur in the pixel electrode layer. Thus, the pixel electrode layer does not have a defect in shapes, thereby a display device which performs a high resolution display with high reliability can be manufactured.

Display device

Provided are a display device. The display device comprises: a display unit defined by a display area and a non-display area located outside the display area, and including pixels arranged in the display area, first sensing wirings electrically connected to the pixels, and auxiliary voltage wirings electrically separated from the pixels; and a sensing unit electrically connected to the first sensing wirings, wherein the first sensing wirings and the auxiliary voltage wirings extend in a first direction and are sequentially arranged along a second direction perpendicular to the first direction at first intervals, the first sensing wirings are spaced apart from each other along the second direction at second intervals greater than the first intervals and are electrically separated from each other, and the auxiliary voltage wirings are electrically connected to each other.

Array substrate, display panel, and display device

An array substrate, a display panel and a display device are provided. The array substrate includes a plurality of pixel units arranged in an array, each pixel unit includes a first sub-pixel, a second sub-pixel and a third sub-pixel, and each of the first, second and third sub-pixels includes a pixel circuit including a switching transistor, a driving transistor, a sensing transistor, a storage capacitor and a light-emitting device. The first sub-pixels, the second sub-pixels and the third sub-pixels included in each row of the array are controlled by four scanning lines, and at least one of the four scanning lines is shared by the row of the array and another row of the array adjacent to the row of the array. Each column of pixel units of the array are coupled to a same data line.

Field-effect transistor, method for producing same, display element, display device, and system

(Object) To miniaturize a field-effect transistor. (Means of Achieving the Object) A field-effect transistor includes a semiconductor film formed on a base, a gate insulating film formed on a part of the semiconductor film, a gate electrode formed on the gate insulating film, and a source electrode and a drain electrode formed in contact with the semiconductor film, wherein a thickness of the source electrode and the drain electrode is smaller than a thickness of the gate insulating film, and the gate insulating film includes a region that is not in contact with the source electrode or the drain electrode.

Electroluminescence display device

An electroluminescence display device is disclosed, which may use a polysilicon thin film transistor and an oxide thin film transistor together by using a dual line with respect to a plurality of switching transistors arranged on the same line. The electroluminescence display device includes a first active layer; a first gate line arranged on the first active layer and intersecting the first active layer; a second active layer forming a channel different from that of the first active layer, arranged on the first gate line; and a second gate line arranged on the second active layer and intersecting the second active layer. The first gate line and the second gate line are overlapped with each other, and the first gate line and the second gate line supply the same gate signal.

Panel, Display Device, and Vehicle-Mounted Display Device

Disclosed are a panel capable of performing transparent display, a display device and a vehicle-mounted display device. A transmission part includes an organic light-emitting diode so as to perform light emission as well as display, thereby increasing an emission area, reducing the driving voltage required for emission driving, and consequently increasing the lifespan of the display device.

Display apparatus and method of manufacturing the same

A display apparatus includes a substrate, a first thin-film transistor including a first semiconductor layer on the substrate, and a first gate electrode on the first semiconductor layer, the first gate electrode being insulated from the first semiconductor layer by a first gate insulating layer, an organic interlayer insulating layer covering the first gate electrode, a first conductive layer on the organic interlayer insulating layer, a first contact hole exposing a top portion of the first semiconductor layer by penetrating through the organic interlayer insulating layer and the first gate insulating layer, and a first protruding portion protruding from a top surface of the substrate between the substrate and the first semiconductor layer, the first protruding portion corresponding to the first contact hole, wherein the first conductive layer contacts the first semiconductor layer through the first contact hole.

Display apparatus

A display apparatus including a substrate, a first power source line disposed in a peripheral area adjacent to a display area configured to display image, the first power source line including a first layer and a second layer disposed on the first layer and electrically connected to the first layer, a first insulation layer disposed between the first layer and the second layer of the first power source line, and a first insulating dam disposed on and contacting the second layer of the first power source line, the first insulating dam disposed in the peripheral area and surrounding the display area.

Organic light-emitting display apparatus

An organic light-emitting display apparatus includes: a first substrate; an insulating layer on the first substrate; a signal wiring on the insulating layer; an organic light-emitting device on the first substrate, the organic light-emitting device defining an active area and including a first electrode, a second electrode, and an intermediate layer between the first and second electrodes; a passivation layer on the insulating layer; and a metal layer on the passivation layer at an outer region adjacent to the active area, separated from the first electrode, and contacting the second electrode and the signal wiring, wherein a first opening is in the passivation layer at the outer region, and the metal layer contacts the insulating layer at the first opening.

Thin film transistor array substrate and preparing method therefor, and oled display device

The present disclosure discloses a thin film transistor array substrate including an active layer disposed on a base substrate, wherein the active layer includes a first active region and a second active region located in a same structural layer, the first active region has a material comprising poly-silicon, and includes a first channel region, and a first source region and a first drain region that are located at both sides of the first channel region, respectively, the first source region having a first contact layer disposed thereon, the first drain region having a second contact layer disposed thereon, and materials of both the first and second contact layers being boron-doped poly-silicon; and the second active region has a material comprising metal oxide semiconductor, and includes a second channel region and a second source region and a second drain region that are located at both sides of the second channel region, respectively. The present disclosure also discloses a preparing method for the thin film transistor array substrate as mentioned above, and an OLED display device including the array substrate.

Foldable display design

A display device comprises a substrate having a foldable first region and a second region adjacent to the foldable first region, wherein a folding axis overlaps the foldable first region. The display device further comprises a first transistor overlapping the foldable first region and having a first channel region with a first dimension along a first direction that is substantially perpendicular to the folding axis. The display device further comprises a second transistor overlapping the second region and having a second channel region with a second dimension along the first direction, wherein the first dimension is less than the second dimension.

Organic light emitting diode display

An organic light emitting diode (OLED) display includes a substrate, a thin film transistor disposed on the substrate, a first electrode disposed on the thin film transistor and electrically connected to the thin film transistor, a first auxiliary layer disposed on the first electrode, an emission layer disposed on the first auxiliary layer, an electron transport layer disposed on the emission layer, a first buffer layer disposed on the electron transport layer, and a second electrode disposed on the first buffer layer.

Display substrate having a thin film transistor and method of manufacturing the same

In a method for manufacturing a display substrate, a thin film transistor is formed on a base substrate. The thin film transistor includes a gate electrode, an active pattern, a source electrode and a drain electrode. A first passivation layer is formed to cover the thin film transistor. A second passivation layer is formed on the first passivation layer. A photoresist pattern is formed to partially expose the second passivation layer. The first passivation layer and the second passivation layer are partially removed to form a contact hole exposing the drain electrode. A pixel electrode layer is formed on the second passivation layer, the drain electrode and the photoresist pattern. A portion of the pixel electrode layer and the second photoresist pattern are removed to form a pixel electrode. The portion of the pixel electrode layer is disposed on a top surface and a sidewall of the photoresist pattern.

Semiconductor device and manufacturing method thereof

A semiconductor device with high aperture ratio is provided. The semiconductor device includes a transistor and a capacitor having a pair of electrodes. An oxide semiconductor layer formed over the same insulating surface is used for a channel formation region of the transistor and one of the electrodes of the capacitor. The other electrode of the capacitor is a transparent conductive film. One electrode of the capacitor is electrically connected to a wiring formed over the insulating surface over which a source electrode or a drain electrode of the transistor is provided, and the other electrode of the capacitor is electrically connected to one of the source electrode and the drain electrode of the transistor.

Array substrate, oled display panel and display device

The disclosure discloses an array substrate, an OLED display panel and a display device. A storage capacitor includes a first capacitor and a second capacitor which are connected in parallel, wherein the first capacitor includes a storage electrode and a first electrode, a layer where the first electrode is located is same as a layer where the grid electrode of the driving transistor is located, the second capacitor includes the storage electrode and a second electrode, a layer where the second electrode is located is same as a layer where the power supply voltage line is located, and the first electrode and the second electrode are electrically connected through a via hole penetrating through a first insulating layer and a second insulating layer.

Display panel and display device

Provided are a display panel and a display device. The display panel includes an optical component area and a conventional display area. A base substrate includes multiple pixels, and each pixel includes a light-emitting device and a pixel driving circuit which is electrically connected to the light-emitting device. The light-emitting devices includes first light-emitting devices and second light-emitting devices. The conventional display area is provided with the first light-emitting devices; and the optical component area is provided with the second light-emitting devices. The optical component area includes a first optical component area and a second optical component area. The first optical component area includes a first light-transmitting area and multiple first light-shielding areas. The second optical component area includes a second light-transmitting area and multiple second light-shielding areas. The first light-shielding areas do not have an edge parallel to an edge of the second light-shielding areas.

Transparent display device

A transparent display device may improve transmittance and definition. The transparent display device comprises a plurality of first signal lines extended in a first direction and disposed to be spaced apart from one another, a plurality of second signal lines extended in a second direction and disposed to be spaced apart from one another, a transmissive area provided between two first signal lines adjacent to each other and two second signal lines adjacent to each other, and a first pixel and a second pixel disposed based on an overlapping area where the first signal line and the second signal line cross each other. The first pixel has a triangular shape, and the second pixel has a triangular shape symmetrical with the first pixel by interposing one of the first signal line and the second signal line.

Tft arrangement for display device

A new TFT arrangement is demonstrated, which enables prevention of TFT to be formed over a joint portion between the adjacent SOI layers prepared by the process including the separation of a thin single crystal semiconductor layer from a semiconductor wafer. The TFT arrangement is characterized by the structure where a plurality of TFTs each belonging to different pixels is gathered and arranged close to an intersection portion of a scanning line and a signal line. This structure allows the distance between regions, which are provided with the plurality of TFTs, to be extremely large compared with the distance between adjacent TFTs in the conventional TFT arrangement in which all TFTs are arranged in at a regular interval. The formation of a TFT over the joint portion can be avoided by the present arrangement, which leads to the formation of a display device with a negligible amount of display defects.

Thin film transistor, and thin film transistor array panel and organic light emitting diode display including the same

A thin film transistor includes a semiconductor which is disposed on a substrate and includes a source region, a drain region and a channel region, a gate insulating layer disposed on the semiconductor, a gate electrode disposed on the gate insulating layer, an interlayer insulating layer disposed on the gate electrode, contact holes defined in the interlayer insulating layer, the contact holes respectively exposing the source region and the drain region of the semiconductor, and a source electrode and a drain electrode which are disposed on the interlayer insulating layer and respectively contact the source region and the drain region through the contact holes, where at least one of the contact holes exposing the source region and the drain region obliquely traverses the semiconductor.

Display apparatus

Disclosed are a display apparatus and a method of manufacturing the same. The display apparatus includes a light emitting part including a plurality of light emitting diodes; and a thin film transistor (TFT) panel part configured to drive the plurality of light emitting diodes. A first side of the light emitting part and a first side of the TFT panel part are coupled to each other so as to face each other. The plurality of light emitting diodes are electrically connected to the plurality of TFTs, respectively.

Display device and electronic device including display device

Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.

Manufacturing method of array substrate, array substrate and display device

A manufacturing method of an array substrate, an array substrate and a display device are provided. The method includes: forming a first electrode; forming a first insulation layer on the first electrode; forming a first via hole in the first insulation layer; forming an active layer on the first insulation layer, which is electrically connected with the first electrode through the first via hole; forming a gate insulation layer on the active layer; forming a first gate electrode on the gate insulation layer, which overlaps with at least part of the active layer; forming a second insulation layer on the first gate electrode and the gate insulation layer, forming a second via hole in the second insulation layer and the gate insulation layer; forming a pixel electrode on the second insulation layer, which is electrically connected with the active layer through the second via hole.

Organic light emitting diode display and manufacturing method thereof

A display device includes: a substrate; a semiconductor layer; a gate electrode overlapping the semiconductor layer; a common voltage line disposed on a same layer as the gate electrode; a common voltage line anti-oxidation layer disposed on the common voltage line; an interlayer insulating layer; source and drain electrodes disposed on the interlayer insulating layer; and a common voltage applying electrode disposed on a same layer as the source electrode and the drain electrode. The common voltage applying electrode is connected to the common voltage line through a first contact hole formed in the interlayer insulating layer, the common voltage line anti-oxidation layer includes an opening overlapping the common voltage line, the interlayer insulating layer is disposed in the opening, a width of the opening is smaller than a width of the common voltage line, and the first contact hole is disposed in the opening in a plan view.

Organic Light Emitting Display with Touch Sensor

Disclosed is an organic light emitting display device with a touch sensor. The display device has a touch sensor that is directly disposed on a sealing part, thus removing the necessity of an additional adhesion process, simplifying a manufacturing process and reducing manufacture cost. In addition, the display device with the touch sensor includes a display cover electrode of a display pad that is made of a same material as a conductive layer included in the touch sensor, thus preventing damage to the display pad electrode.

Element substrate and light-emitting device

A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.

Light-Emitting Element, Light-Emitting Device, Display Device, Electronic Appliance, and Lighting Device

A multicolor light-emitting element using fluorescence and phosphorescence, which has a small number of manufacturing steps owing to a relatively small number of layers to be formed and is advantageous for practical application can be provided. In addition, a multicolor light-emitting element using fluorescence and phosphorescence, which has favorable emission efficiency is provided. A light-emitting element which includes a light-emitting layer having a stacked-layer structure of a first light-emitting layer exhibiting light emission from a first exciplex and a second light-emitting layer exhibiting phosphorescence is provided.

Display device and fabrication method thereof

A high-resolution display device is provided. The display device includes a plurality of light-emitting units emitting light of different colors. The light-emitting unit has a microcavity structure and intensifies light with a specific wavelength. In the light-emitting units emitting light of different colors, reflective layers with different thicknesses are formed, an insulating layer is formed to cover the reflective layers, and then a top surface of the insulating layer is subjected to planarization treatment, whereby an insulating layer with different thicknesses is formed. After that, light-emitting elements emitting white light are formed over the planarized top surface of the insulating layer to overlap with the respective reflective layers, whereby the light-emitting units that intensify different colors due to different optical path lengths are separately formed.

Display device

A display device includes a plurality of pixels each having a plurality of light-emitting regions including at least a first light-emitting region of a first color, a second light-emitting region of a second color, and a third light-emitting region of a third color and a light-transmitting region. Visibility of the first color is higher than visibility of the second color. The plurality of light-emitting regions are divided into a first group including the first light-emitting region and a second group including the second light-emitting region. The first light-emitting region is adjacent to the second light-emitting region. The light-transmitting region is located between the first light-emitting region and the second light-emitting region. The light-transmitting region is not located in a region between light-emitting regions adjacent to each other in the first group and in a region between light-emitting regions adjacent to each other in the second group.

Organic light-emitting diode (oled) display and method of manufacturing the same

An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a lower substrate including a display area and a non-display area surrounding the display area, wherein a plurality of pixels are formed in the display area. The OLED display also includes an embedded circuit formed in the configured to apply a plurality of signals to the pixels, and an initialization wiring formed in the non-display area and configured to apply an initialization voltage to each of the pixels. The initialization circuit is formed in a layer so as to at least partially overlap with the area of the embedded circuit.

Display device

A display device includes, on a substrate, light emitting elements each formed by sequentially stacking a first electrode layer, an organic layer including a light emission layer, and a second electrode layer and arranged in first and second directions which cross each other, a drive circuit including drive elements that drive light emitting elements, and a wiring extending in the first direction, and an insulating layer disposed in a gap region sandwiched by the light emitting elements neighboring in the second direction and having a recess or a projection. The wiring is disposed in an overlap region overlapping with the recess or the projection in the insulating layer in a thickness direction, in the gap region, and the second electrode layers in the light emitting elements neighboring in the second direction are separated from each other by the recess or the projection in the insulating layer.

Display apparatus

A display apparatus capable of preventing (or protecting from) permeation of moisture. The apparatus includes a substrate comprising a display area and a peripheral area surrounding the display area; a pad unit located on the peripheral area; an organic insulating layer covering the display area and a part of the peripheral area adjacent to the display area; and an inorganic insulating layer that covers at least a first area when the first area is a part between the organic insulating layer and the pad unit.

Electronic Device Display With Flexible Encapsulation

A flexible display encapsulation layer may be used to encapsulate and protect organic light-emitting diodes and a thin-film transistor layer on a flexible display. The flexible encapsulation layer may include a lateral dispersion layer that exhibits an anisotropic moisture diffusion characteristic. Lateral diffusion in the lateral dispersion layer is larger than vertical dispersion in a direction that runs perpendicular to the display. An inorganic conformal coating layer may cover the lateral diffusion layer and may serve as a pinhole filling layer. The pinhole filling layer may be covered with a moisture barrier layer that serves to prevent moisture from penetrating the display. A polymer protective layer may cover the moisture barrier layer and may be relatively insensitive to bending induced stress as the display is flexed.

Thin film transistor, organic light-emitting display apparatus including the same, and method of manufacturing the thin film transistor

A thin film transistor includes a gate electrode provided on a substrate, a semiconductor layer insulated from the gate electrode and including indium, tin, zinc and gallium oxide, and source/drain electrodes formed on the semiconductor layer.

Display device

A non-breakable display device, electronic appliance, or lighting device is provided. A bendable display device in which a first flexible substrate and a second flexible substrate provided with transistors overlap each other with a bonding layer therebetween is fabricated. The display device is bent so that the first substrate is positioned on the inner side (the valley side) and the second substrate is positioned on the outer side (the mountain side).

Thin film transistor substrate, method for fabricating the same, and display device including the same

A thin film transistor substrate, a method for fabricating the same, and a display device including the same are provided. In one aspect of the present invention, there is provided a thin film transistor substrate comprising a substrate, a semiconductor layer formed on the substrate, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film, an interlayer insulating film formed on the gate electrode and including a source contact hole and a drain contact hole for exposing portions of the semiconductor layer, and a source electrode and a drain electrode respectively inserted into the source contact hole and the drain contact hole. The interlayer insulating film includes a first convex portion formed at an inlet of the source contact hole and at an inlet of the drain contact hole.

Display panel, preparing method thereof, and display device

A display panel, a method for preparing a display panel, and a display device are disclosed. The display panel includes a substrate layer; a light shielding metal layer and a first electrode plate of a storage capacitor on the substrate layer; a buffer layer covering the light shielding metal layer and the first electrode plate on the substrate layer; an active layer and a second electrode plate of the storage capacitor on the buffer layer; a gate insulating layer on the buffer layer and the active layer, and a source, a gate and a drain on the gate insulating layer.

Display panel

The present disclosure relates to a display panel including a display area that can be stretched by including a plurality of stretching units and a peripheral area positioned at an edge of the display area. Each of the stretching units includes: a plurality of islands separately disposed to include a plurality of pixels disposed therein; a plurality of bridges extended from the islands to connect adjacent islands or to connect the islands with the peripheral area; and a plurality of openings disposed adjacent to the bridges, between the bridges, and between the bridges and the islands, wherein areas of the islands are gradually increased toward the peripheral area.

Semiconductor device

A semiconductor device including a first oxide semiconductor layer, a first gate electrode opposing the first oxide semiconductor layer, a first gate insulating layer between the first oxide semiconductor layer and the first gate electrode, a first insulating layer covering the first oxide semiconductor layer and having a first opening, a first conductive layer above the first insulating layer and in the first opening, the first conductive layer being electrically connected to the first oxide semiconductor layer, and an oxide layer between an upper surface of the first insulating layer and the first conductive layer, wherein the first insulating layer is exposed from the oxide layer in a region not overlapping the first conductive layer in a plan view.

Display device

A display device includes a display module, first and second supporters disposed under the display module and arranged in a first direction, spacers disposed between the first and second supporters, third and fourth supporters respectively disposed under the first and second supporters, hinge parts connected to the third and fourth supporters, sliding parts disposed in openings defined in the third and fourth supporters and connected to the first and second supporters, and elastic parts disposed in guide grooves defined in the third and fourth supporters and extending in the first direction from the openings toward distal portions of the third and fourth supporters.

Thin film transistor, method for fabricating the same, and oled display panel

The disclosure discloses a thin film transistor, a method for fabricating the same, and an OLED display panel. The method for fabricating a thin film transistor includes: forming a poly-silicon layer and a gate insulation layer on a base substrate in that order; forming a pattern of a gate above the base substrate with the gate insulation layer in a patterning process; doping the base substrate with the pattern of the gate for the first time; forming a pattern of first photoresist on the base substrate doped for the first time, using a mask for forming the pattern of the gate, wherein the pattern of the first photoresist covers the pattern of the gate and an area for forming a lightly doped drain area; and doping the base substrate with the pattern of the first photoresist for the second time to form a pattern of an active layer.

Semiconductor device, manufacturing method thereof, and display device including the semiconductor device

To improve field-effect mobility and reliability of a transistor including an oxide semiconductor film. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The oxide semiconductor film includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, and a third oxide semiconductor film over the second oxide semiconductor film. The first to third oxide semiconductor films contain the same element. The second oxide semiconductor film includes a region where the crystallinity is lower than the crystallinity of one or both of the first oxide semiconductor film and the third oxide semiconductor film.

Display Device

A display device includes a plurality of subpixels each including a transmission portion and a light emitting portion on a substrate, wherein the light emitting portion includes a driving transistor and an organic light emitting diode connected to the driving transistor, and an extension line extending from a drain electrode of the driving transistor and a first electrode of the organic light emitting diode are connected to each other in the transmission portion.

Display apparatus

A display apparatus includes a lower substrate including a display area including a display element and a non-display area around the display area; a sealing member disposed on the non-display area and around the display area; a terminal portion disposed on the non-display area and including at least one internal terminal extending toward an edge of the lower substrate; a fanout line portion connected to the at least one internal terminal and including a line extending to the display area; an upper substrate disposed to face the lower substrate and bonded to the lower substrate by the sealing member; and an upper groove portion on a side surface of the upper substrate to correspond to the at least one internal terminal.

Semiconductor device

Solved is a problem of attenuation of output amplitude due to a threshold value of a TFT when manufacturing a circuit with TFTs of a single polarity. In a capacitor ( 105 ), a charge equivalent to a threshold value of a TFT ( 104 ) is stored. When a signal is inputted thereto, the threshold value stored in the capacitor ( 105 ) is added to a potential of the input signal. The thus obtained potential is applied to a gate electrode of a TFT ( 101 ). Therefore, it is possible to obtain the output having a normal amplitude from an output terminal (Out) without causing the amplitude attenuation in the TFT ( 101 ).

Organic electroluminescent device and repairing method thereof

An organic electroluminescent device includes a substrate including a plurality of pixel regions each having a light emission region and an element region; a plurality of thin film transistors (TFTs) including at least one switching TFT and at least one driving TFT in each element region; a planarization layer on the plurality of TFTs; a first electrode on the planarization layer and including first to third portions connected to one another, wherein the first and second portions are at each pixel region, and the third portion is at a neighboring pixel region; an organic light emitting layer on the first electrode; and a second electrode on the organic light emitting layer, wherein an end of the third portion overlaps the driving TFT of the neighboring pixel region.

Display device and electronic device including display device

Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.

Organic light emitting display device

Disclosed is an organic light emitting display device. The organic light emitting display device includes a first emission part between a first electrode and a second electrode, a second emission part on the first emission part, and a first charge generation layer and a second charge generation layer between the first emission part and the second emission part. The first emission part includes a first organic layer, and the second emission part includes a second organic layer. A first thickness includes the first emission part and the first charge generation layer, and a second thickness includes the second emission part and the second charge generation layer. The first thickness is equal to or greater than the second thickness.

Semiconductor device and method for manufacturing the same

A semiconductor device includes a pixel portion having a first thin film transistor and a driver circuit having a second thin film transistor. Each of the first thin film transistor and the second thin film transistor includes a gate electrode layer, a gate insulating layer, a semiconductor layer, a source electrode layer, and a drain electrode layer. Each of the layers of the first thin film transistor has a light-transmitting property. Materials of the gate electrode layer, the source electrode layer and the drain electrode layer of the first thin film transistor are different from those of the second transistor, and each of the resistances of the second thin film transistor is lower than that of the first thin film transistor.

Organic light emitting display apparatus

An organic light emitting display apparatus includes a first pixel and a second pixel. The first pixel includes a first data line, a first driving thin film transistor (TFT), and a first contact metal connected to the first driving TFT and in a layer at a same level as a layer of the first data line. The second pixel includes a second data line, a second driving TFT, and a second contact metal connected to the second driving TFT and in a layer at a same level as a layer of the second data line. The first gap between the first driving TFT and the first contact metal is different from a second gap between the second driving TFT and the second contact metal.

Organic light emitting display panel and method of manufacturing the same

Provided are an organic light emitting display panel and a method of manufacturing the same. The organic light emitting display panel includes: a pixel defined by an intersection of one of a plurality of data lines and one of a plurality of gate lines, the pixel including: a transistor, a storage capacitor including: a first electrode, and a second electrode, and a semiconductor layer, a first plate partially overlapping the semiconductor layer in the pixel, the first plate including: a gate portion of the transistor, and a capacitor-forming portion including the first electrode of the storage capacitor, and a second plate on the first plate in the pixel, the second plate including the second electrode of the storage capacitor, the second plate not overlapping the semiconductor layer.