VORRICHTUNG UND VERFAHREN ZUR DIAMANTHERSTELLUNG

Glastiegel aus Siliziumdioxid und Verfahren zur Herstellung eines derartigen Glastiegels

Die Erfindung betrifft einen Tiegel aus Siliziumdioxid mit einer aluminiumdotierten Innenwand-Schicht. Eine aluminiumdotierte Schicht kann auf einem Teil der Außenwand gebildet werden. Die Innenschicht ist zur Förderung der Siliziumdioxidkristallisation nichthomogen mit Aluminium dotiert. Die Mischung aus nichthomogener Siliziumdioxidkörnung enthält Aluminium und kann aus aluminiumdotierter und aluminiumfreier Siliziumdioxidkörnung oder als Alternative aus aluminiumbeschichteter grober Quarzkörnung bestehen. DOLLAR A Der Tiegel wird hergestellt, indem Volumen-Siliziumdioxidkörnung in einen rotierenden Tiegel eingebracht wird, um eine voluminöse Wand auszubilden, zu der eine Bodenwand und eine Seitenwand gehören. Nach Erhitzen des Inneren der Form zum Schmelzen der Volumen-Siliziumdioxidkörnung wird dem Inneren aluminiumdotierte Siliziumdioxidkörnung zugeführt. Die Hitze führt zum Schmelzen mindestens eines Teils der inneren Siliziumdioxidkörnung, wodurch sie mit der Wand verschmilzt und ...

PROCEDURE AND DEVICE FOR PULLING SEMICONDUCTOR, IN PARTICULAR SILICON, VOLUMES

DEVICE TO THE ZONE FLOATING RECRYSTALLIZATION.

POWDER METALLURGY TUNGSTEN CRUCIBLE FOR ALUMINUM NITRIDE CRYSTAL GROWTH

Apparatus and method for diamond production

Verfahren zur Herstellung eines einkristallinen Körpers und Vorrichtung zur Durchführung des Verfahrens

Verfahren zur Behandlung von schmelzbarem Material

Verfahren zur Wärmebehandlung von Metallen bzw. Metallegierungen

Verfahren zur Herstellung von Einkristallen aus Halbleitermaterial

Verfahren zum zonalen Erhitzen von langgestreckten Chargen von Materialien und Vorrichtung zur Durchführung des Verfahrens

СПОСОБ И УСТРОЙСТВО ДЛЯ ОЧИСТКИ РАСПЛАВЛЕННОГО МАТЕРИАЛА

Способ осуществления направленной кристаллизации кремния или других материалов. Охлажденную пластинку (19) опускают в расплавленный кремний (18), и слиток (29) из твердого кремния кристаллизуется сверху вниз.

DEVICE FOR PRODUCING OF DIAMONTS, UNIT FOR SAMPLE HOLDING (VARIANTS) AND METHOD FOR PRODUCING OF DIAMONDS (VARIANTS)

СПОСОБ И УСТРОЙСТВО ДЛЯ ОЧИСТКИ РАСПЛАВЛЕННОГО МАТЕРИАЛА

Способ осуществления направленной кристаллизации кремния или других материалов. Охлажденную пластинку (19) опускают в расплавленный кремний (18), и слиток (29) из твердого кремния кристаллизуется сверху вниз.

Horizontal apparatus for the purification and the pulling of semiconductor crystals

Apparatus for producing solid monocrystalline phase by solidifying liquid phase, e.g. for producing semiconductor crystals, with application of electromagnetic pressure at phase interface to control meniscus shape

L'invention concerne un dispositif de fabrication d'une phase solide monocristalline (42) par solidification d'une phase liquide (44), comprenant une enceinte (40) contenant au moins une partie de la phase liquide et dont au moins une paroi est destinée à être en contact avec la phase liquide ; un moyen de chauffage de la phase liquide adapté à créer un gradient thermique au niveau d'une interface (46) entre la phase liquide et la phase solide, le dispositif comprenant en outre un moyen de génération d'un champ électromagnétique (50), distinct du moyen de chauffage, pour appliquer une pression électromagnétique sur la surface de jonction (48) de la phase liquide au niveau de ladite interface.

Liquid encapsulated zone melting crystal growth method and apparatus

A method and apparatus for growing an extended length single crystal of a Group III-V or II-VI material such as GaAs by moving a crucible containing a seed crystal and precompounded crystal material encapsulated in a molten encapsulant preferably vertically in a multi-zone furnace between two furnace zones maintained at temperatures above the melting point of the encapsulant but below the melting point of the crystal material through an intervening short "spike" zone maintained at a temperature at least equal to the melting temperature of the crystal material to crystallize the precompounded crystal material with the seed crystal, and tipping the crucible in the furnace, e.g. by tipping the furnace with the crucible in it, to decant the encapsulant prior to recovering the crystal.

Vorrichtung zur Schmelzbehandlung von Metallen

PROCEDURE AND DEVICE FOR THE PRODUCTION OF SINGLE CRYSTALS

DEVICE AND PROCEDURE FOR THE PRODUCTION OF CRYSTALLINE MATERIALS

СПОСОБ И УСТРОЙСТВО ДЛЯ РАФИНИРОВАНИЯ РАСПЛАВЛЕННОГО МАТЕРИАЛА

Способ проведения направленной кристаллизации кремния или других материалов для его рафинирования. Охлажденную пластинку (19) опускают в расплавленный кремний (18), и слиток (29) из твердого кремния кристаллизируется сверху вниз.

Process and device of manufacture of single-crystal cylindrical stems

SYSTEM FOR CONTINUOUS GROWING OF MONOCRYSTALLINE SILICON

Liquid encapsulated zone melting crystal growth method and apparatus

A method and apparatus for growing an extended length single crystal of a Group III-V or II-VI material such as GaAs by moving a crucible containing a seed crystal and precompounded crystal material encapsulated in a molten encapsulant preferably vertically in a multi-zone furnace between two furnace zones maintained at temperatures above the melting point of the encapsulant but below the melting point of the crystal material through an intervening short "spike" zone maintained at a temperature at least equal to the melting temperature of the crystal material to crystallize the precompounded crystal material with the seed crystal, and tipping the crucible in the furnace, e.g. by tipping the furnace with the crucible in it, to decant the encapsulant prior to recovering the crystal.

Method for annealing by a high energy beam to form a single-crystal film

A large single-crystalline film on an amorphous insulator is formed by high energy beam annealing. The crystal growth of a molten polycrystalline or amorphous film on the insulator is controlled to occur from the central region toward the outer edge of the molten zone. This control is accomplished by using, for example, a doughnut-shaped laser beam.

DEVICE AND METHOD FOR THE PRODUCTION OF MONOCRYSTALLINE OR MULTICRYSTALLINE MATERIALS, IN PARTICULAR MULTICRYSTALLINE SILICON

The invention relates to a device and a method for the production of monocrystalline or multicrystalline materials using the vertical-gradient-freeze method, in particular silicon for applications in photovoltaics. According to the invention a low amount of wastage is achieved in that the cross section of the crucible is polygonal, in particular rectangular or square-shaped. Disposed around the circumference of the crucible there is a flat or planar heating element, in particular a jacket heater, which generates an inhomogeneous temperature profile. This corresponds to the temperature gradient formed in the centre of the crucible. The heat output of the flat heating element decreases going from the top end to the bottom end of the crucible. The flat heating element comprises a plurality of parallel heating webs, extending in a vertical or horizontal meandering course. The heat output from the webs is set by varying the conductor cross section. To avoid local overheating in corner areas ...

УСТРОЙСТВО И СПОСОБ ФОРМИРОВАНИЯ АЛМАЗОВ

FIELD: production of synthetic diamonds, which may be used as windows in high power lasers or as anvils in high pressure devices. SUBSTANCE: device for forming a diamond in precipitation chamber contains heat-draining holder for holding a diamond and ensuring thermal contact with side surface of diamond, adjacent to the side of growth surface of diamond, non-contact temperature measurement device, positioned with possible measurement of diamond temperature from edge to edge of growth surface of diamond, and main device for controlling technological process for producing temperature measurement from non-contact device for measuring temperature and controlling temperature of growth surface in such a way, that all temperature gradients from edge to edge of growth surface are less than 20°C. A structure of sample holder for forming a diamond is also included. Method for forming a diamond includes placing a diamond in the holder in such a way, that thermal contact is realized with side surface of diamond, adjacent to growth surface side of diamond, measurement of temperature of growth surface of diamond, with the goal of realization of temperature measurements, control of growth surface temperature on basis of temperature measurements and growth of monocrystalline diamond by means of microwave plasma chemical precipitation from steam phase on growth surface, under which the speed of diamond growth exceeds 1 micrometer per hour. EFFECT: possible production of sufficiently large high quality monocrystalline diamond with high growth speed. 7 cl, 1 tbl, 7 dwg

METHOD OF FORMING A SINGLE-CRYSTAL SEMICONDUCTOR FILM ON AN AMORPHOUS INSULATOR

Improvements in and relating to methods of heat-treatment

... 1,116,022. Zone-melting. ASSOCIATED SEMICONDUCTOR MANUFACTURERS Ltd. 24 Aug., 1966. No. 38062/66. Heading B1S. [Also in Division H1] A zone melting technique for producing mercury-doped germanium is carried out in a vessel containing mercury vapour sealed by a plug of liquid mercury located close to the vessel in a tube communicating with it. The vessel is a silica tube 13 in which a boat 1 carrying a monocrystalline germanium seed 3 and a supply of germanium 2 is placed. After connecting up to a tube 7 communicating with a system for providing vacuum or nitrogen under pressure mercury is introduced into the lower end 6 of the silica tube, which is then evacuated from end 5 and sealed. In operation the tube is uniformly heated to about 600‹C while the molten zone is produced by movable heater 15. The vapour pressure of mercury in the tube determines the doping of the resulting germanium monocrystal and is determined by the position and thus the temperature of the mercury liquid/vapour interface ...

Improvements in or relating to devices for zone-melting

... 1,007,329. Zone-melting. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. Dec. 12, 1962 [Dec. 15, 1961], No. 46939/62. Heading B1S. A rod 3 of material in a vessel 2 is zonemelted in a tube 4 by passage of the tube through a graphite heating member which comprises two rings 5 closely surrounding tube 4 and connected by a thin ring 6 spaced from tube 4, the graphite member being contained in a stationary tube 8 which has an inert gas inlet 16 and is surrounded by two ovens 11 and 12 and an induction coil 7 for heating the centre of ring 6. Tube 4 has an inert gas outlet 17 and a sleeve 13 which is displaced together with tube 4 between bearing and driving rollers 14 and 15 respectively. Tube 4 passes into tube 8 through a sealing ring 10 of P.T.F.E. Vessel 2 may be contained in a sealed ampoule 1. Gallium arsenide may be zone-melted in the presence of arsenic.

Improvements in or relating to methods and apparatus for the manufacture of single crystals of a substance, for example a semi-conductor such as germanium or silicon

... In a method for growing a single crystal rod from a melt the loss of heat by radiation from the surface of that part of the already grown rod which is at a temperature exceeding the softening temperature of the substance is compensated by inward radiation from a heat radiating member surrounding the rod symmetrically, the temperature gradient along that part of the rod axis being constant. The softening temperature is the lowest temperature at which dislocations are still produced by thermal stresses inside the material. When a single crystal 1 (Fig. 1) is produced by passing a molten zone 4 down a rod of material, the zone 4 is produced by heating a graphite ring 2 by a high-frequency coil 3, and loss of heat from the single crystal part of the rod 1 is compensated by radiation from the flat surface 5 of the ring. The ring preferably has an outside diameter between ...

DEVICE AND PROCEDURE FOR THE DIAMOND PRODUCTION

METHOD OF GROWING A CRYSTALLINE SOLID, CRYSTALLINE SOLID ASSOCIES AND DEVICE.

Process and apparatus for forming nanoparticles using radiofrequency plasmas

Methods and apparatus for producing nanoparticles, including single-crystal semiconductor nanoparticles, are provided. The methods include the step of generating a constricted radiofrequency plasma in the presence of a precursor gas containing precursor molecules to form nanoparticles. Single-crystal semiconductor nanoparticles, including photoluminescent silicon nanoparticles, having diameters of no more than 10 nm may be fabricated in accordance with the methods.

METHOD FOR THE GROWTH OF SEMICONDUCTOR RIBBONS

PRODUCTION OF AND PRODUCTION UNIT FOR SILICON SINGLE CRYSTAL WITH FEW CRYSTAL DEFECT, AND SILICON SINGLE CRYSTAL AND SILICON WAFER PRODUCED THEREBY

PROBLEM TO BE SOLVED: To obtain a silicon single crystal and a silicon wafer with extremely low defect density throughout the crystal by CZ process while maintaining their high productivity, along with improving the in-plane oxygen concentration distribution of the wafer. SOLUTION: This method for producing a silicon single crystal by Czochralski(CZ) process comprises pulling up a silicon single crystal being in growth so that the contour of the solid-liquid interface in the crystal comes within ±5 mm relative to the average of the solid-liquid interface except the periphery 5 mm; wherein for the value of temperature gradient G (temperature change/ axial crystal length) [ C/cm] in the proximity of the above interface from 1,420°C to 1,350°C or from the melting point of silicon to 1,400°C, in-oven temperature is controlled so that ΔG comes within 5°C/cm {ΔG=(Ge-Gc); Gc is the temperature gradient in the central portion of the crystal [°C/cm]; Ge is the temperature gradient in the peripheral ...

Zone refining apparatus

... Zone melting apparatus comprises means for moving an elongated body of material slowly past a plurality of heat sources whereby portions of the material are melted by each source in turn and allowed to solidify in passing between adjacent heat sources, and includes means to permit the portions of the body of material to be melted but to prevent a seed crystal at one end of the body from being melted. In one embodiment a boat 3 (Fig. 1) containing material 7d, e.g. germanium, is slowly pulled by a rod 8 through a tube 1 around which are inductive heating coils 6a, 6b and 6c which produce molten zones 7a, 7b and 7c which pass along the material in boat 3. The boat 3 has an inductive coupling shell 2 (see also Fig. 2), e.g. of graphite, which enables the coils to heat the material and so form the molten zones. One end of the boat contains a seed crystal 7g in contact with the material, and the shell 2 stops short of this end of ...

PROCEDURE AND SYSTEM FOR THE FORMATION OF SICKRISTALLEN WITH SPATIALLY UNIFORM ONE DOPING IMPURITIES

POWDER METALLURGY TUNGSTEN POT FOR THE ALUMINUM NITRIDE CRYSTAL GROWTH

Powder metallurgy tungsten crucible for aluminum nitride crystal growth

HIGH TEMPERATURE HIGH PRESSURE CAPSULE FOR PROCESSING MATERIALS IN SUPERCRITICAL FLUIDS

APPARATUS AND METHOD FOR DIAMOND PRODUCTION

An apparatus for producing diamond in a deposition chamber including a heat/sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements ...

Method of forming a sheet of single crystal semiconductor material

Apparatus for forming thin layers of material such as single crystalline silicon includes a container having a generally cylindrical interior surface. The container is rotatably mounted and movable through a heater. In forming the layer of material, the material is heated in the container to a temperature above the material melting point. The container is rotated whereby the liquid material adheres to the interior surface of the container by centrifugal force. The container is slowly cooled beginning at one end thereof whereby the layer of material solidifies.

Process for producing monocrystalline layer on insulator

A process for producing a monocrystalline layer on an insulator, particularly in a semiconductor wafer adapted for use to produce large-scale integrated circuits, comprising the steps of providing a nonmonocrystalline layer on an insulator and heating a region of the nonmonocrystalline layer by irradiating it from two heat sources while moving the heat sources relative to the nomonocrystalline layer, thereby locally melting and transforming the nonmonocrystalline layer to a monocrystalline layer.

Apparatus and method for diamond production

An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements ...

Способ выращивания монокристаллов германия или кремния и устройство для его реализации

Изобретение относится к области выращивания полупроводниковых материалов, в частности крупногабаритных бездислокационных монокристаллов германия или кремния методом Чохральского с использованием нагревательного элемента, находящегося в контакте с расплавленной зоной, форма которой вблизи вытягиваемого кристалла и его сечение управляется за счет нагревания расплава и регулирования теплоотвода от кристаллизуемого материала и направлено на их выращивание размером, максимально приближенным по диаметру к диаметру используемого тигля. Достигается это применением погруженного в расплав ОТФ-нагревателя, который с одной стороны позволяет создать на фронте кристаллизации необходимую величину осевого температурного градиента, а с другой - изменить (ламинизировать) характер течения вблизи растущего кристалла, исключая тем самым появление связанных с неоднородным течением структурных дефектов. ОТФ-нагреватель обеспечивает создание благоприятных для роста кристаллов тепловых условий на всем своем сечении ...

УСТРОЙСТВО И СПОСОБ ФОРМИРОВАНИЯ АЛМАЗОВ

... 1. Устройство для формирования алмаза в камере для осаждения, содержащее теплоотводящий держатель для удерживания алмаза и для осуществления термического контакта с боковой поверхностью алмаза, прилежащей к грани ростовой поверхности алмаза, бесконтактное устройство измерения температуры, расположенное с возможностью измерения температуры алмаза от края до края ростовой поверхности алмаза, и основное устройство управления технологическим процессом для получения измерений температуры от бесконтактного устройства для измерения температуры и регулирования температуры ростовой поверхности так, чтобы все температурные градиенты от края до края ростовой поверхности были меньше 20°С. 2. Устройство по п.1, в котором теплоотводящий держатель содержит трубчатую часть, выполненную из молибдена. 3. Устройство по п.1, в котором теплоотводящий держатель расположен в платформе и переносит тепловую энергию к платформе, установленной в камере для осаждения. 4. Устройство по п.3, в котором теплоотводящий ...

Verfahren zum Reinigen von Kristallmaterial und zum Herstellen von Kristallen, eine Vorrichtung hierzu sowie die Verwendung der so erhaltenen Kristalle

Es wird ein Verfahren zur Herstellung von Kristallen mit geringem Absorptionsverhalten, geringer diffuser Streuung und Strahlenschaden durch Aufreinigen von Kristallrohmaterial in einer Vorrichtung (100) beschrieben, die einen verschließbaren Schmelztiegel (122) zum Aufschmelzen des Kristallrohmaterials umfasst, wobei der verschließbare Schmelztiegel (122) mindestens eine Öffnung (142) aufweist. Das Verfahren umfasst ein Trocknen des Rohmaterials durch Entfernen von absorptiv, adsorptiv und/oder chemisch gebundenen Wassers, ein Umsetzen von im Rohmaterial erhaltenen Verunreinigungen mit mindestens einem Scavenger sowie ein Homogenisieren des aufgeschmolzenen Kristallmaterials und zeichnet sich dadurch aus, dass die Öffnung (142) definierte geometrische Leitwerte aufweist, wobei das Trocknen bei einer Temperatur von 100 DEG C bis 600 DEG C über einen Zeitraum von mindestens 20 Stunden bei einem geometrischen Leitwert der Öffnung von 2,00 bis 30,00 mm·2·, das Umsetzen von Verunreinigungen ...

Verfahren und Vorrichtung zum Bilden von Nanopartikeln unter Verwendung von Hochfrequenzplasmen

Verfahren zur Erzeugung von kristallinen Kern-Schale-Halbleiter-Nanopartikeln, wobei das Verfahren aufweist: Dissoziieren von halbleiterenthaltenden Kern-Vorläufermolekülen in einem Hochfrequenzplasma, um Kern-Vorläuferspezies zu schaffen, die Keim bilden und in Halbleiter-Nanopartikeln wachsen, und Aufwachsen einer anorganischen Passivierungsschale auf die Oberfläche der Halbleiter-Nanopartikel.

Method and apparatus for refining a molten material

Method and apparatus for refining a molten material

SYSTEM FOR CONTINUOUS GROWING OF MONOCRYSTALLINE SILICON

CRYSTAL GROWTH SYSTEM AND METHOD FOR LEAD-CONTAINED COMPOSITIONS USING BATCH AUTO-FEEDING

This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).

Continuous crystal plate growth process and apparatus

Reactive gas is released through a crystal source material or melt to react with impurities and carry the impurities away as gaseous products or as precipitates or in light or heavy form. The gaseous products are removed by vacuum and the heavy products fall to the bottom of the melt. Light products rise to the top of the melt. After purifying, dopants are added to the melt. The melt moves away from the heater and the crystal is formed. Subsequent heating zones re-melt and refine the crystal, and a dopant is added in a final heating zone. The crystal is divided, and divided portions of the crystal are re-heated for heat treating and annealing.

System for continuous growing of monocrystalline silicon

An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.

PROCESS FOR THE GROWTH OF A CRYSTALLINE SOLID, ASSOCIATED CRYSTALLINE SOLID AND DEVICE

Способ кристаллизации крупногабаритных легированных германиевых слитков в виде дисков и пластин и устройство для его реализации

Изобретение относится к выращиванию легированных монокристаллов полупроводников из расплава замораживанием при температурном градиенте с использованием нагревательного элемента, находящегося в контакте с расплавленной зоной, перемещение которого осуществляется в процессе цикла кристаллизация и направлено на получение крупногабаритных слитков германия в виде дисков и пластин с высокой однородностью распределения в них легирующей примеси по сечению и высоте. Сущность изобретения состоит в том, что до начала процесса кристаллизации, а именно после расплавления загрузки с лигатурой, расплав в тигле интенсивно перемешивают за счет преимущественного нагрева донным нагревателем снизу, что приводит к возникновению интенсивной естественной конвекции со структурой ячеек Бернара вдоль всего тонкого слоя расплавленного германия, когда его высота значительно меньше диаметра. Такой характер течения в течение нескольких часов приводит к полному перемешиванию примеси, что позволяет начать кристаллизацию ...

Device and method for manufacturing crystal or polycrystal material especially polysilicon

PROCEEDED WITH GROWTH Of a Crystalline solid, CRYSTALLINE SOLID AND DEVICE ASSOCIATE.

La présente invention concerne un procédé de croissance d'un solide cristallin par fusion puis refroidissement d'un matériau de cristallisation (2), dans lequel le matériau de cristallisation (2) réparti sur un support est mis en fusion dans la région d'action (4) d'une source de chaleur. Selon ce procédé : - hors de la région d'action, on répartit le matériau de cristallisation (2) selon au moins deux zones de compositions différentes (3 , 3 , 3 , 3 , 3 ), et - le matériau de cristallisation (2) étant réparti sur une longueur supérieure à la longueur de la région d'action (4), on réalise un déplacement de la région d'action (4) relativement au matériau de cristallisation (2), de façon à placer successivement dans la région d'action (4) puis hors de la région d'action, des portions du matériau de cristallisation de compositions différentes. On utilise ce procédé pour obtenir toutes sortes de distributions spatiales dans la composition d'un solide cristallin, en particulier pour obtenir un gradient de dopage dans un cristal laser. The present invention relates to a method of growing a crystalline solid by melting and then cooling a crystallization material (2), wherein the crystallization material (2) distributed on a support is melted in the region of action. (4) a heat source. According to this process: - outside the region of action, the crystallization material (2) is distributed according to at least two zones of different compositions (3, 3, 3, 3, 3), and - the crystallization material (2 ) being distributed over a length greater than the length of the action region (4), the action region (4) is displaced relative to the crystallization material (2), so as to place successively in the region action (4) and then outside the region of action, portions of the crystallization material of different compositions. This method is used to obtain all kinds of spatial distributions in the composition of a crystalline solid, in ...

High temperature high pressure capsule for processing materials in supercritical fluids

A capsule for containing at least one reactant and a supercritical fluid in a substantially air-free environment under high pressure, high temperature processing conditions. The capsule includes a closed end, at least one wall adjoining the closed end and extending from the closed end; and a sealed end adjoining the at least one wall opposite the closed end. The at least one wall, closed end, and sealed end define a chamber therein for containing the reactant and a solvent that becomes a supercritical fluid at high temperatures and high pressures. The capsule is formed from a deformable material and is fluid impermeable and chemically inert with respect to the reactant and the supercritical fluid under processing conditions, which are generally above 5 kbar and 550° C. and, preferably, at pressures between 5 kbar and 80 kbar and temperatures between 550° C. and about 1500° C. The invention also includes methods of filling the capsule with the solvent and sealing the capsule, as well as ...

Zone purification of cylindrical ingots

Cylindrical ingots of materials that expand on melting or freezing are purified or zone refined by a process which includes providing a tubular container having both a cylindrical cavity and a slot along its entire length. In zone refining, as is well-known, a heater of a predetermined elevated temperature traverses from one end of a normally solid charge to another at least once to thereby sweep impurities to one end of the charge. During the zone refining process, material which expands on phase change (e.g., solid to liquid) flows into the slot. As a consequence, fractures and other damage to the container and/or zone-refined material are minimized. The substantially round cross section is retained following removal of the excess material from the zone refined ingot after solidification.

Process for purifying crystal material and for producing crystals, apparatus therefor and application of crystals thus obtained

Es wird ein Verfahren zur Herstellung von Kristallen mit geringem Absorptionsverhalten, geringer diffuser Streuung und Strahlenschaden durch Aufreinigen von Kristallrohmaterial in einer Vorrichtung (100) beschrieben, die einen verschließbaren Schmelztiegel (122) zum Aufschmelzen des Kristallrohmaterials umfasst, wobei der verschließbare Schmelztiegel (122) mindestens eine Öffnung (142) aufweist. Das Verfahren umfasst ein Trocknen des Rohmaterials durch Entfernen von absorptiv, adsorptiv und/oder chemisch gebundenen Wassers, ein Umsetzen von im Rohmaterial erhaltenen Verunreinigungen mit mindestens einem Scavenger, sowie ein Homogenisieren des aufgeschmolzenen Kristallmaterials, und zeichnet sich dadurch aus, dass die Öffnung (142) definierte geometrische Leitwerte aufweist, wobei das Trocknen bei einer Temperatur von 100°C bis 600°C über einen Zeitraum von mindestens 20 Stunden bei einem geometrischen Leitwert der Öffnung von 2,00 bis 30,00 mm2, das Umsetzen von Verunreinigungen mit dem ...

Vorrichtung zum Zonenschmelzen von Kristallen, insbesondere von Halbleiterkristallen

Crystallization device for production of single- or multi crystalline silicon by vertical-gradient-freeze-method, comprises stable crucible, and heating device for melting the silicon and exhibiting jacket heater for rejection of heat flow

The crystallization device for production of single- or multi crystalline silicon by vertical-gradient-freeze-method, comprises a stable crucible (2) with upper- and lower end, and a heating device for melting the silicon and exhibiting a jacket heater (7) for rejection of heat flow perpendicular to longitudinal direction. The device is designed to form a temperature gradient in the longitudinal direction in the crucible. The crucible exhibits a rectangular- or square shaped cross-section. The heater comprises heating elements arranged at side surfaces of the crucible. The crystallization device for production of single- or multi crystalline silicon by vertical-gradient-freeze-method, comprises a stable crucible (2) with upper- and lower end, and a heating device for melting the silicon and exhibiting a jacket heater (7) for rejection of heat flow perpendicular to longitudinal direction. The device is designed to form a temperature gradient in the longitudinal direction in the crucible.

Improvements in or relating to moving-zone heat treatment of materials

... 973,754. Inductive heating. PHILIPS ELECTRONIC ASSOCIATED INDUSTRIES Ltd. Sept. 12, 1961 [Sept. 15, 1960], No. 32692/61. Heading H5H. [Also in Division B1] Apparatus for the moving zone heat treatment of an elongated mass of material 3 comprises a pair of high frequency single turn coils 7, 8 surrounding a tube 1 of vitreous quartz which holds a crucible 2 containing the mass of material and a ribbed graphite heating ring 5 which encircles the crucible and is guided for movement in the longitudinal direction of the mass by the inner walls of the tube. The ring is positioned between the coils and heats a zone of the material when high frequency current is applied in the same phase to each coil. The reaction between the field produced by the induced current in the ring and the field set up by the coils maintains the relative position of the ring and coils and as these are moved externally along the tube, the ring and hence the heated zone moves in the direction of the length of material.

ZONE MELT RECRYSTALLIZATION APPARATUS

The improved zone-melt recrystallization apparatus is comprised of a port system for providing a thermal barrier between the recrystallization chamber and the loader assembly. A bellows system is used to lift a plurality of pins that support a silicon wafer being recrystallized. Flexure supports are designed to constrain the motion of the pins within the desired direction of motion of the wafer.

Method and apparatus for refining amolten material

Apparatus and method for diamond production

An apparatus for producing diamond in a deposition chamber including a beat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20 DEG C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements ...

CRUCIBLE AND SINGLE CRYSTAL GROWTH METHOD USING CRUCIBLE

Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2 s as the surface roughness of the wall surface 1 H, concave curved plane 1 J, cone surface 1 F and convex curved plane 1 L of the starting material carrying section 1 D and the wall surface 1 K of the seed carrying section 1 E, which constitute the inner surface of the crucible of a crucible body 1 A.

Quarzglastiegel

VORRICHTUNG ZUR ZONENSCHMELZREKRISTALLISIERUNG.

METHOD OF AND SYSTEM FOR FORMING SIC CRYSTALS HAVING SPATIALLY UNIFORM DOPING IMPURITIES

In a physical vapor transport method and system, a growth chamber charged with source material and a seed crystal in spaced relation is provided. At least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged with a dopant, is also provided. Each capsule is installed in the growth chamber. Through a growth reaction carried out in the growth chamber following installation of each capsule therein, a crystal is formed on the seed crystal using the source material, wherein the formed crystal is doped with the dopant.

EPITAXIAL WAFER APPARATUS

A system (30) for coating the surface of compound semiconductor wafers includes providing a single-wafer epitaxial production system in a cluster-tool architecture with a loading (33), storage (34), and transfer (32) modules, a III-V deposition chamber, and an insulator deposition chamber. The compound semiconductor wafer (10) is placed in the loading and transfer module and the pressure is reduced to less than 5 x 10-10 Torr, after which the wafer is moved to the III-V growth chamber (35) and layers of compound semiconductor material are epitaxially grown on the surface of the wafer. The single wafer is then moved through the transfer module to the insulator deposition chamber and an insulating cap layer is formed by thermally evaporating molecules, consisting essentially of gallium and oxygen, from an effusion cell using a thermal evaporation source that utilizes a metallic iridium crucible that is manufactured using the electroforming process.

Silica glass crucible

Method of production of silicon with high purity

METHOD AND DEVICE FOR PRODUCING MONOCRYSTALS

Silica glass crucible

To provide a silica glass crucible, wherein there are no problems of generating a sinking and buckling when said crucible is used for pulling up silicon single crystal at a high temperature. The silica glass crucible used for pulling up the silicon single crystal, wherein at least an outer surface of a wall part of the crucible is covered with fine grooves having a length of less than 200m, a width of less than 30m and a depth of from more than 3m to less than 30m. Preferably, said fine groves are formed by carrying out a sand-blast treatment and a hydrofluoric acid etching and exist on more than 10% of the outer surface of the crucible, and a sliding frictional coefficient of the outer surface of the crucible to a carbon at 1500 degree C is more than 0.6.

APPARATUS AND METHOD FOR DIAMOND PRODUCTION

An apparatus for producing diamond in a deposition chamber including a heat/sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20 ° C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements ...

Vorrichtung und Verfahren zur Herstellung von kristallinen Materialien

PROCESS FOR PRODUCING MONOCRYSTALLINE LAYER ON INSULATOR

Method and apparatus for processing metals

A metal is zone-melted directly by induction in a water-cooled silver crucible. Steel, hafnium, molybdenum, tungsten, and tantalum may be zone-refined. Small pieces of uranium, zirconium, titanium, nickel, iron, aluminium, gadolinium, praseodymium, dysprosium, and yttrium may be formed into ingots.

Epitaxial wafer apparatus

APPARATUS AND METHOD FOR DIAMOND PRODUCTION

An apparatus for producing diamond in a deposition chamber including a heat/sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20 ~ C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements ...

APPARATUS AND METHOD FOR DIAMOND PRODUCTION

An apparatus for producing diamond in a deposition chamber including a heat/sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20 ~ C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements ...

Device and method for manufacturing crystal or polycrystal material especially polysilicon

The present invention relates to a device and method for manufacturing single crystal or polycrystal material by vertical-gradient-freeze-method especially polysilicon for photovoltaic application. According to this invention, to implement a small quantity of spoilage, because the cross-section of crucible is polygon especially rectangle or square. Around the crucible setting flat or plane heating elements especially interlayer heater which generate asymmetrical temperature distributing, which is corresponding to the temperature gradient forming in the crucible center. The heat output of the mentioned flat heating element is more and more low from crucible top to bottom, the mentioned heating element includes multiple parellel heating web plate which extends in vertical or horizontal serpentine path. To set the heat output from the mentioned web plate through changing conductor cross-section. In order to avoid local overheating in crucible corner region, there is a constriction of cross-section ...

SYSTEM FOR CONTINUOUS GROWING OF MONOCRYSTALLINE SILICON

Method And Apparatus For Refining A Molten Material

A method for the directional solidification of silicon or other materials. A cooled plate is lowered into a silicon melt and an ingot of solid silicon is solidified downwards ...

Powder metallurgy crucible for aluminum nitride crystal growth

A crucible for growing III-nitride (e.g., aluminum nitride) single crystals is provided. The crucible includes an elongated wall structure defining an interior crystal growth cavity. Embodiments include a plurality of grains and a wall thickness of at least about 1.5 times the average grain size. In particular embodiments, the crucible includes first and second layers of grains the first layer including grains forming an inside surface thereof and the second layer being superposed with the first layer. The crucible may be fabricated from tungsten-rhenium (W-Re) alloys; rhenium (Re); tantalum monocarbide (TaC); tantalum nitride (Ta₂N); hafnium nitride (HfN); a mixture of tungsten and tantalum (W-Ta); tungsten (W); and combinations thereof.

Process for producing monocrystalline layer on insulator

A process for producing a monocrystalline layer on an insulator, particularly in a semiconductor wafer adapted for use to produce large-scale integrated circuits, comprising the steps of providing a nonmonocrystalline layer on an insulator and heating a region of the nonmonocrystalline layer by irradiating it from two heat sources while moving the heat sources relative to the nomonocrystalline layer, thereby locally melting and transforming the nonmonocrystalline layer to a monocrystalline layer.

CRYSTAL GROWTH SYSTEM AND METHOD FOR LEAD-CONTAINED COMPOSITIONS USING BATCH AUTO-FEEDING

This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).

SYSTEM FOR CONTINUOUS GROWING OF MONOCRYSTALLINE SILICON

An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal / melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.

Crystal growth system and method for lead-contained compositions using batch auto-feeding

This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).

Method and apparatus for purification of crystal material and for making crystals therefrom and use of crystals obtained thereby

The method for producing single crystals includes drying crystal raw material by removing water, reaction of impurities with a scavenger, preferably a metal halide, and homogenizing the melt. The method is performed with the raw material in a melt vessel with a variable-sized through-going opening, in which drying occurs at 100° C. to 600° C. for at least 20 hours with a geometric conductance value for the through-going opening of 2.00 to 30.00 mm²; the reacting occurs at 600° C. to 1200° C. for at least nine hours with a geometric conductance value of 0.0020 to 0.300 mm² and the homogenizing occurs at above 1400° C. for at least six hours with a geometric conductance value of 0.25 to 1.1 mm². Alternatively the geometric conductance value is the same during drying, reacting and homogenizing and takes a value between 0.25 and 1 mm².

METHOD AND APPARATUS FOR HEAT TREATMENT

System for continuous growing of monocrystalline silicon

An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.

Continuous crystal plate growth process and apparatus

A crystal plate 1 is grown in a continuous process by first purifying a crystal source material, a crystal melt or powder, in a purification station 3. Valves 7 control the flow of purified crystal melt or source powder 9 to a first hot zone 11, whose temperature is above the melt temperature of the crystal. A dopant source 17 with controller 19 provides dopant to the liquefied crystal 15. The first heater zone 21 surrounding the first hot zone 11 heats the crystal above its melting temperature. The second heater zone 27 produces a temperature in the second zone which is below the melt temperature of the crystal. The liquefied crystal, the liquid solid interface and the first portion of the crystal are supported in a boat-shaped crucible container with a bottom 31 and side walls. As the crystal leaves the support plate 31 it passes on to a conveyor 33. The crystal moves within an enclosure 43, which has a noble gas or noble gas and reactant gas atmosphere 45. A large heater has a first ...

IMPROVED ZONE MELT RECRYSTALLIZATION APPARATUS

The improved zone-melt recrystallization apparatus is comprised of a port system for providing a thermal barrier between the recrystallization chamber and the loader assembly. A bellows system is used to lift a plurality of pins that support a silicon wafer being recrystallized. Flexure supports are designed to constrain the motion of the pins within the desired direction of motion of the wafer.

Crystal growth system and method for lead-contained compositions using batch auto-feeding

This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).

SINGLE CRYSTAL INGOTS WITH REDUCED DISLOCATION DEFECTS AND METHODS FOR PRODUCING SUCH INGOTS

An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput. 1. A high purity single crystal ingot characterized by reduced dislocation defects and more uniform resistivity or conductivity axially and radially made by the process comprising:growing the single crystal ingot from a seed crystal held at a crystal/melt interface in a wide diameter, low aspect ratio crucible for preventing formation of convection currents and minimizing oxygen in the melt, wherein said crucible includes a weir surrounding the crystal;melting crystalline feedstock and providing dopant such that static thermal conditions are maintained at the crystal/melt interface during replenishment of the melt in the crucible; andseparately controlling a plurality of heaters disposed beneath the crucible for establishing controllable thermal zones across the melt, such that a uniform thermal distribution and is maintained across the radius of the growing ingot.2. The high purity single crystal ingot as set forth in wherein melting crystalline feedstock and providing dopant is ...

SINGLE CRYSTAL INGOTS WITH REDUCED DISLOCATION DEFECTS AND METHODS FOR PRODUCING SUCH INGOTS

An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput. 1. A process for producing a high purity single crystal silicon ingot characterized by reduced dislocation defects and more uniform resistivity or conductivity axially and radially , the process comprising:growing the single crystal silicon ingot from a seed crystal held at a crystal/melt interface in a wide diameter, low aspect ratio crucible having a ratio of diameter to height of at least 4:1 for preventing formation of convection currents and minimizing oxygen in the melt, the crucible not being raised or lowered during growth of the single crystal silicon ingot, wherein said crucible includes:an outer sidewall; anda weir disposed interior to the crucible sidewall and surrounding the crystal, the weir being closer to the ingot than to the sidewall during growth of the ingot;melting crystalline feedstock and providing dopant such that static thermal conditions are maintained at the crystal/melt interface during replenishment of the melt in the crucible; andseparately controlling a ...

Float zone silicon wafer manufacturing system and related process

The process for manufacturing a silicon wafer includes steps for mounting a float zone silicon work piece for exfoliation, energizing a microwave device for generating an energized beam sufficient for penetrating an outer surface layer of the float zone silicon work piece, exfoliating the outer surface layer of the float zone silicon work piece with the energized beam, and removing the exfoliated outer surface layer from the float zone silicon work piece as the silicon wafer having a thickness less than 100 micrometers.

Mono-crystalline silicon growth method

A mono-crystalline silicon growth method includes: providing a furnace, a supporting base and a crucible which do not rotate relative to the furnace, and a heating module disposed at an outer periphery of the supporting base. After solidifying a liquid surface of a silicon melt in the crucible to form a crystal, the heating power of the heating module is successively reduced to appropriately adjust the temperature around the crucible to effectively control a temperature gradient of a thermal field around the crucible, so as to form a mono-crystalline silicon ingot by solidifying the silicon melt.

Mono-crystalline silicon growth apparatus

A mono-crystalline silicon growth apparatus is provided. The mono-crystalline silicon growth apparatus includes a furnace, a support base disposed in the furnace, a crucible disposed on the support base, and a heating module. The support base and the crucible do not rotate relative to the heating module, and an axial direction is defined to be along a central axis of the crucible. The heating module is disposed at an outer periphery of the support base and includes a first heating unit, a second heating unit, and a third heating unit. The first heating unit, the second heating unit, and the third heating unit are respectively disposed at positions with different heights corresponding to the axial direction.

Semiconductor device manufacturing method and semiconductor device

단결정 인상 장치 내의 히터 전극 용손을 방지하기 위한 장치

본 발명은 도가니(103)의 히터(104)에 전류를 공급하는 데에 사용되는 도전성 금속 전극(5,5)의 용손(meltdown)을 방지하기 위한 것이다. 단결정 인상 장치는 상기 도가니(103)를 둘러싸는 히터(104)와, 상기 히터(104)의 한쌍의 흑연 중간 전극(6)에 각각 나사결합된 한쌍의 전극(5,5)과, 상기의 한쌍의 전극(5,5)에 전력을 공급하기 위한 전압원(9)을 구비한다. 스위치(11)는 상기 전력을 전달 및 차단시키도록 절환된다. 전류계(10a)는 상기 히터(104)를 통해 흐르는 전류를 연속적으로 측정한다. 본 발명에 의한 조사에 따르면, 상기 중간 전극(6)의 하부에 크랙(8)이 발생하는 경우에 전극(5,5)의 용손 이전에 상기 크랙(8) 내의 전기 대전 형상으로 발생되는 측정된 전류값의 미세한 변동이 있었다. 따라서, 전류계(10a)에 의해 측정된 전류의 변동이 허용 범위 밖에 있게 되면, 제어기(12)는 스위치(11)를 절환시켜 전극(5,5)으로의 전력 공급을 차단하여 상기 전극(5,5)의 용손을 방지한다.

Apparatus for preventing the damage of the heater electrode in the single crystal pulling apparatus

본 발명은 도가니(103)의 히터(104)에 전류를 공급하는 데에 사용되는 전도성 금속 전극(5, 5)의 용손을 방지하기 위한 것이다. 단결정 인상 장치는 상기 도가니(103)를 둘러싸는 히터(104)와, 히터(104)의 한 쌍의 흑연 중간 전극(6)에 각각 나사 결합된 한 쌍의 전극(5, 5)과, 한 쌍의 전극(5, 5)에 전력을 공급하기 위한 전압원(9)을 구비한다. 스위치(11)는 전력을 전달 및 차단시키도록 절환된다. 전류계(10a)는 히터(104)를 통해 흐르는 전류를 연속적으로 측정한다. 본 발명에 의한 조사에 따르면, 중간 전극(6)의 하부에 균열(8)이 발생하는 경우에 전극(5, 5)의 용손 이전에 균열(8) 내의 전기 대전 형상으로 발생되는 측정된 전류값의 미세한 변동이 있었다. 따라서, 전류계(10a)에 의해 측정된 전류의 변동이 허용 범위 밖에 있게 되면, 제어기(12)는 스위치(11)를 절환시켜 전극(5, 5)으로의 전력 공급을 차단하여 전극(5, 5)의 용손을 방지한다. The present invention is intended to prevent the melting of the conductive metal electrodes (5, 5) used for supplying electric current to the heater (104) of the crucible (103). The single crystal pulling apparatus includes a heater 104 surrounding the crucible 103, a pair of electrodes 5 and 5 screwed to a pair of graphite intermediate electrodes 6 of the heater 104, And a voltage source 9 for supplying electric power to the electrodes 5, The switch 11 is switched to transmit and block the electric power. The ammeter 10a continuously measures the current flowing through the heater 104. [ According to the investigation according to the present invention, when a crack 8 is generated in the lower portion of the intermediate electrode 6, the measured current value generated in the electric charge shape in the crack 8 before the electrode 5, . Therefore, when the variation of the current measured by the ammeter 10a is outside the permissible range, the controller 12 switches the switch 11 to cut off the power supply to the electrodes 5 and 5, ).

Device for producing single crystal

(57)【要約】 【課題】 生産性を向上し、自動化の障害を回避し、既 存の装置にも容易に適用でき、輻射スクリーンの昇降移 動および設置、単結晶育成作業が一連のプロセスのもと で自動的に行えるような単結晶製造装置を提供する。 【解決手段】 種子結晶ホルダー本体６Ａの上方周壁面 に３本のＬ鍵状のフック６Ｂを支点６Ｅを介して三股状 となるように揺動自在に支承する。このフック６Ｂの先 端にメインチャンバー１内で石英坩堝３から引上げられ る単結晶の下端を包囲する中空の截頭逆円錐筒形状を有 する輻射スクリーン７をその上方周縁に付設した３本の 掛止治具６Ｃを介して吊下保持させる構成とする。

Device for supporting monocrystal

Process for producing a single crystal of semiconductor material

Opfindelsen angår en fremgangsmåde til fremstilling af en énkrystal af halv omfattende sme af granulat af ha ved hjælp af en første induktionsvarmespole på en tallerken med et udløbsrør bestående af haivledermaterialet, dannelsen af en smeltemasse af smeltet granulat, som strækker sig fra udløbsrøret i form af en smeltehals og en smeltetop indtil en fasegrænse, tilførsel af varme til smeltemassen ved hjælp af en anden induktionsvarmespole, som har en åbning, hvorigennem smeltehalsen fører, krystallisering af smeltemassen på fasegrænsen og tilførsel af en kølende gas til udløbsrøret og til smeltehalsen for at regulere den aksiale position af en grænseflade mellem udløbsrøret og smeltehalsen. Opfindelsen angår også et apparat til udøvelse af fremgangsmåden. BACKGROUND OF THE INVENTION 1. Field of the Invention The invention relates to a method for producing a single crystal of half comprising smelting of granules of ha by means of a first induction heating coil on a plate with an outlet tube consisting of the semiconductor material, forming a melting mass of molten granules extending from the outlet tube in the form of a melting throat and a melting peak up to a phase boundary; supply of heat to the melting mass by means of another induction heating coil having an opening through which the melting throat leads, crystallizing the melting mass on the phase boundary and supplying a cooling gas to the outlet pipe and to regulate the melting neck to position of an interface between the outlet tube and the fuselage. The invention also relates to an apparatus for practicing the method.

High frequency induction heating device

Patent JPS5217572B2

Quartz glass crucible and method for producing such a quartz glass crucible

Quarzglastiegel mit: einer eine Bodenwand und eine Seitenwand umfassenden Wandung; und einer auf einem Innenteil besagter Wandung ausgeformten aluminiumdotierten Innenschicht dadurch gekennzeichnet, dass die Innenschicht zwischen 0,2 und 1,2 mm tief und mit Aluminium in einer Konzentration von 50–500 ppm dotiert ist. Quartz glass crucible with: a wall comprising a bottom wall and a side wall; and an aluminum-doped inner layer formed on an inner part of said wall characterized, the inner layer is between 0.2 and 1.2 mm deep and doped with aluminum in a concentration of 50-500 ppm.

Production of single crystal and apparatus therefor

(57)【要約】 【課題】 ２つの必要保守操作の間の操作時期を延長す る。 【解決手段】 不活性ガスをフラッシングした引上げチ ャンバーにおいてＣＺ法により融解物から単結晶を引上 げることによるシリコン単結晶の製造方法であって、 ａ）各々側面、上部及び底部境界により規定されてい る、第一内部チャンバーと第二内部チャンバーを引上げ チャンバーに設けること、；ｂ）第一不活性ガス流を、 単結晶の周囲に配置された熱シールドと融解物を入れた るつぼとを収容した第一内部チャンバーに該第一内部チ ャンバーの上部境界を通して供給すること；ｃ）第二不 活性ガス流を、前記るつぼを加熱するための加熱装置を 収容した第二チャンバーに該第二チャンバーの底部境界 を通じて供給するとともに、前記第一不活性ガスと前記 第二不活性ガスとは、早くとも前記内部チャンバーを出 た後でしか混合できないようにすること、を含んでなる ことを特徴とする方法。

Raw material supply apparatus and raw material supply method by Czochralski method

SiC single crystal manufacturing apparatus and manufacturing method

Method of growing silicon single crystal

本发明提供一种以高生长速度制造高质量单晶的技术。本发明提供用切克劳斯基单晶生长法使硅单晶生长的方法，即：在沿平行于单晶的径向的轴测定硅熔体的温度梯度时，把所测定的最大温度梯度称为ΔTmax，最小温度梯度称为ΔTmin，用满足{(ΔTmax-ΔTmin)/ΔTmin}×100≤10的条件使硅单晶生长。

Method and apparatus for manufacturing polycrystalline semiconductor

Single crystal pulling method and apparatus

이 발명은 실리콘단결정의 초기와 말기에 각각의 경우 원추형부분을 인발하며, 그 원추형부분 사이의 원통형부분을 인발하는 용융물에서 실리콘단결정을 인발하는 방법에 관한 것이다. This invention relates to a method for drawing silicon single crystals in a melt which draws a conical section in each case at the beginning and end of a silicon single crystal and draws a cylindrical section between the conical sections. 이 방법은 실리콘단결정 초기의 원추형부분 표면을 실리콘단결정에서 떨어져 일정한 간격을 둔 차폐부분에 의해 차폐시킴을 특징으로 한다. This method is characterized by shielding the conical part surface of the initial silicon single crystal by a shielding part spaced apart from the silicon single crystal. 이 발명은 또 이방법을 실시하는 장치에 관한 것이다. The invention also relates to an apparatus for carrying out this method.

Thermal shield member of silicon single crystal pulling system

열 차폐 부재(36)는, 석영도가니(13)에 저류된 실리콘 융액(12)으로부터 실리콘 단결정 봉(25)을 인양하는 장치에 설치되고, 실리콘 단결정 봉의 외주면을 포위하여 히터(18)로부터의 복사열을 차단하는 통부(37)와, 통부의 하부에 설치된 팽출부(41)와, 팽출부의 내부에 설치된 링 형상의 축열 부재(47)를 구비한다. 축열 부재는 열 전도율이 5W/(m·℃) 이하이고, 실리콘 단결정 봉의 직경을 d로 할 때 축열 부재의 내주면은 높이(H 1 )가 10㎜ 이상 d/2 이하이고 실리콘 단결정 봉의 외주면과 축열 부재의 내주면의 최소 간격(W 1 )이 10㎜ 이상 0.2d 이하이며, 축열 부재의 외주면의 상측 가장자리와 최하부의 수직 거리(H 2 )가 10㎜ 이상 d 이하이고 석영도가니 내주면과 축열 부재의 외주면의 최소 간격(W 2 )이 20㎜ 이상 d/4 이하이다. The heat shield member 36 is installed in a device that lifts the silicon single crystal rod 25 from the silicon melt 12 stored in the quartz crucible 13, and surrounds the outer circumferential surface of the silicon single crystal rod and radiates heat from the heater 18. And a tubular portion 37 for blocking the gap, a bulging portion 41 provided below the tubular portion, and a ring-shaped heat storage member 47 provided inside the bulging portion. The heat storage member has a thermal conductivity of 5 W / (m 占 폚) or less, and when the diameter of the silicon single crystal rod is d, the inner circumferential surface of the heat storage member has a height (H 1 ) of 10 mm or more and d / 2 or less and the outer circumferential surface and heat storage of the silicon single crystal rod. The minimum distance W 1 of the inner circumferential surface of the member is 10 mm or more and 0.2 d or less, and the upper edge of the outer circumferential surface of the heat storage member and the vertical distance H 2 of the bottom part are 10 mm or more d or less, and the inner surface of the quartz crucible and the outer circumferential surface of the heat storage member The minimum spacing W 2 of is 20 mm or more and d / 4 or less.

Device for zone melting

Method and apparatus for preparing an analytical sample by fusion

24 ABSTRACT There is provided a method for preparing an analytical sample by fusion. A mixture of a sample and a flux material is heated and stirred, in a crucible, at a temperature sufficient to fuse the mixture and obtain a substantially homogeneous fused mixture; a first portion of heat radiation radiating from the crucible is reflected back to the crucible so as to provide additional heat to fuse the mixture, while heating and stirring the mixture; and the homogeneous fused mixture, is subsequently cooled, thereby forming the analytical sample.

Device for zone drawing, without crucible, of a stick-shaped semiconductor material

Method and apparatus for producing a single crystal

Method of and system for forming SiC crystals having spatially uniform doping impurities

In a physical vapor transport method and system, a growth chamber charged with source material and a seed crystal in spaced relation is provided. At least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged with a dopant, is also provided. Each capsule is installed in the growth chamber. Through a growth reaction carried out in the growth chamber following installation of each capsule therein, a crystal is formed on the seed crystal using the source material, wherein the formed crystal is doped with the dopant.

DEVICE FOR TENSIONING A THIN PLATE

Crucible-free zone melting device

Zone melting process

Patent FR2196568B1

SEMICONDUCTOR ZONE MERGER PROCESS WITH DRAFT, AND APPARATUS FOR ITS EXECUTION

Apparatus and method for diamond production

An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface, wherein a growth rate of the diamond is greater than 1 micrometer per hour.

Single crystal production apparatus and process

An apparatus and process for producing single crystals according to the Czochralski method for pulling up crystals, wherein the production efficiency and qualities of the crystals can be improved by freely controlling the temperature distribution and heat history of the crystals to be pulled up. The invention relates to a production apparatus according to the Czochralski method provided with a cylinder (19) that is airtightly joined to the ceiling of a lift chamber at the upper end thereof and is closed up to the surface of a melt in a crucible at the lower end thereof and that surrounds coaxially the pulled single crystal bar, and is characterized in that the lower end of the cylinder is provided with a heat-barrier body (25) occupying 30-95 vol.% of the space that is enclosed by the crystal surface, the inner wall of a quartz crucible and the surface of a melt and has a height corresponding to the radius of the crystal to be pulled up from the melt; a process for producing single crystals with the use of the above apparatus; a method of controlling the temperature distribution and heat history of the crystals thus pulled up; and single crystals thus produced. As the apparatus is provided with a heat-barrier body (25) having a sufficient barrier effect, it does not cause any lowering in the velocity of pulling even when the diameter of the pulled single crystal is increased, can uniform the temperature at the whole solid-liquid boundary, does not lower the convention into singl crystals, and can control readily and accurately the temperature distribution and heat history of the crystals to be pulled up.

Patent FR2196568A1

Heat shield and crystal growth equipment

A heat shield and a crystal growth equipment are provided, in which the length-adjustable and hybrid-angle heat shield is provided for the crystal growth equipments. The heat shield is adapted for not only guiding the inert gas flow but also speeding up the flow rate of the gas and the cooling rate of the crystal so as to raise the axial temperature gradient at the solid-molten interface, the growth rate of the crystal and the productivity. The heat shield further can also reduce the possibility of microdefect nucleation to improve the quality of crystal at the same time. In addition, the length of heat shield can be adjusted according to the distance between the heat shield and the semiconductor material melt in different crucibles in case that the crucibles are made by different factories. This can reduce the cost of the heat shield manufacturing.

Patent FR2321936B1

Furnace for non ferrous metal smelting

An electric kiln melts non-metallic materials e.g. crystalline minerals for the production of crystals. The kiln has an electrical heating element that generates an alternating magnetic field in the molten crystals. The alternating field is generated by alternating current. The alternating magnetic fields generates convection within the molten material, driving more uniform distribution of atomic impurities. The current frequency is in the range 0.1 Hz to 100 Hz and fed to a number of heating elements in defined phase lengths.

Certificate of correction

Crystal pulling apparatus

Crystal growing appts. consists of a crucible (4) surrounded by a heater (5) and arranged in a container (1), whose wall is provided with a thermal insulation (10) and on its outer side with cooling channels (3) for a cooling medium. The container has a protection gas inlet (11,12) and outlet (14,15). The novelty is that the container (1) has, in the region of the crucible (4), an annular chamber (8) connected by an inner protective tube (6) to the heater (5), the chamber limited by an outer protective tube (7), behind which the thermal insulation (10) of the container (1) is located.

Electrical resistance heater for crystal growing apparatus

An electrical resistance heater of the present invention for use in a crystal puller used for growing monocrystalline silicon ingots according to the Czochralski method comprises a heating element sized and shaped for disposition in the housing of the crystal puller around the crucible for applying heat to the crucible and silicon therein. The heating element includes heating segments connected together in an electric circuit. The segments have upper and lower sections and are arranged relative to each other so that when disposed around the crucible containing molten silicon the upper sections are disposed generally above a horizontal plane including the surface of the molten silicon and the lower sections are disposed generally below the horizontal plane. The upper sections are constructed to generate more heating power than the lower sections thereby to reduce a temperature gradient between the molten silicon at its surface and the ingot just above the surface of the molten silicon. The upper sections have a thickness substantially equal to the thickness of the lower sections and have a width substantially less than the width of the lower sections. The cross-sectional area of the upper sections is everywhere less than the cross-sectional area of the lower sections.

Structure of single-turn induction coil for semiconductor rod melting

ABSTRACT OF THE DISCLOSURE A single-turn induction heating coil for the production of dislocation-free, monocrystalline semicon-ductor rods with large diameters is provided which, in contrast to prior art single-turn coils which have a sub-stantially circular configuration, is configured to form one or more recesses corresponding to the free space formed between the ends of the coil as they merge into the current supply lines. The recesses are arranged in a circle about the axis of rotation passing through the center of the coil, with the distance between the free space formed between the ends of the coils as they pass into the current supply lines and an adjacent recess being equal to the distance bet-ween adjacent recesses.

Device for crucible-free zone melting of semiconductor material

Silicon single crystal pull-up apparatus

A silicon single crystal pull-up apparatus is used to pull up a doped silicon single crystal from a melt by means of the Czochralski process and includes a pull-up furnace, a sample chamber which is externally mounted on the pull-up furnace and houses a sublimable dopant, a shielding means for thermally isolating the interior of the pull-up furnace and the interior of the sample chamber, a sample tube which can be raised and lowered between the interior of the sample chamber and the interior of the pull-up furnace, and a raising and lowering means which is provided with guide rails on which the sample tube can slide and a wire mechanism by which the sample tube is raised and lowered along the guide rails.

Process and device for the production of a single crystal

A process and device for the production of a single crystal of semiconductor material is by pulling the single crystal from a melt, which is contained in a crucible and is heated by a side heater surrounding the crucible. The melt is additionally heated, in an annular region around the single crystal, by an annular heating device which surrounds the single crystal and is positioned above the melt.

Method for producing a single crystal

The present invention provides a method for producing a single crystal by pulling a single crystal from a raw material melt in a chamber in accordance with Czochralski method, comprising pulling a single crystal having a defect-free region which is outside an OSF region to occur in a ring shape in the radial direction and which interstitial-type and vacancy-type defects do not exist in, wherein the pulling of the single crystal is performed with being controlled so that an average of cooling rate in passing through a temperature region of the melt point of the single crystal to 950° C. is in the range of 0.96° C./min or more and so that an average of cooling rate in passing through a temperature region of 1150° C. to 1080° C. is in the range of 0.88° C./min or more and so that an average of cooling rate in passing through a temperature region of 1050° C. to 950° C. is in the range of 0.71° C./min or more. Thereby, production margin in pulling a single crystal having a defect-free region can be considerably enlarged and therefore there can be provided a method for producing a single crystal by which production yield and productivity of the crystal having the defect-free region can be considerably improved.

Flow arrangement and method for crystal manufacturing

Crystal manufacturing apparatus and manufacturing method by Czochralski method

Float zone silicon wafer manufacturing system and related process

The process for manufacturing a silicon wafer includes steps for mounting a float zone silicon work piece for exfoliation, energizing a microwave device for generating an energized beam sufficient for penetrating an outer surface layer of the float zone silicon work piece, exfoliating the outer surface layer of the float zone silicon work piece with the energized beam, and removing the exfoliated outer surface layer from the float zone silicon work piece as the silicon wafer having a thickness less than 100 micrometers.

Single crystal silicon pulling apparatus, silicon melt contamination prevention method, and silicon melt contamination prevention apparatus

Crucible-free zone-melting apparatus

MELTING DEVICE FOR TITLE-LESS ZONE MELTING OF CRYSTALLIZING PRETS, ESPECIALLY OF CROSS-CONDUCTIVE PRETS

Method of producing ferrite single crystals

Production of dislocation-free silicon single crystals

DEVICE FOR CRUCIBLE-FREE ZONE MELTING OF A SEMICONDUCTOR ROD.

Crystal-growth furnace for interface curvature control

In a Bridgman-type apparatus for growing single crystals, a pair of different gradient sections is located around the respective liquid and solid phases of a sample undergoing solidification. Each gradient section is chosen with thermal characteristics matching the thermal properties of the sample and more particularly taking into consideration the difference in thermal conductivity between the liquid and solid phases. The result is a better match or control of the temperature profile between the furnace and the sample material undergoing solidification which results in improved interface shape control.

Electrical resistance heater for crystal growing apparatus

本发明的电阻加热器,供在按照直拉法生长单晶硅锭的拉晶机中使用,该电阻加热器包括一个加热元件,此加热元件加工成一定尺寸和形状,用于设置在拉晶机的外罩中围绕坩埚,用于将热量加到坩埚和其中的硅上。加热元件包括若干加热分段,它们在电路中连接在一起。各分段具有上面部分和下面部分并彼此相对地配置,以便当围绕装熔化硅的坩埚设置时,上面部分一般是设置在包括熔化的硅表面的一个水平面上方,而下面部分一般是设置在该水平面的下方。将上面部分制成比下面部分产生更多的发热能力,以便由此来减少在其表面处熔化的硅和刚好在熔化的硅表面上方晶锭之间的温度梯度。上面部分具有一与下面部分基本上相等的厚度,并具有一显著小于下面部分的宽度。上面部分的截面积各处都小于下面部分的截面积。

Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot

A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection ( 20 ) in the melt ( 5 ) in a quartz crucible ( 3 ) is controlled by regulating the temperatures at a plurality of parts of the melt ( 5 ). A single crystal semiconductor ( 6 ) can have a desired diameter by regulating the amount of heat produced by heating means ( 9 a ) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means ( 9 a ) and that by the lower-side heating means ( 9 b ) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means ( 9 b ) is controlled to a relatively large proportion. Without inviting high cost and large size of the manufacturing apparatus, the oxygen concentration distribution in the axial direction of the single crystal semiconductor, the diameter of the single crystal semiconductor, and the minute fluctuation of the oxygen concentration in the axial direction are controlled.

Apparatus for crystal production

Highly-qualified crystals are grown with good yield under an optimal temperature condition by controlling the axial temperature distribution in the vicinity of the seed crystal locally. In an apparatus for producing crystals to grow crystals wherein a seed crystal 14 is placed in a crucible 11 which is retained in a furnace, raw materials 12 filled in the crucible 11 are heated and liquefied, and a raw material 12 slowly cooled in the crucible 11 frombelow upward, the apparatus comprises means for controlling temperature to cool or heat the vicinity of the seed crystal 14 locally. The temperature control means controls the temperature by a hollow constructed cap 17 mounted outside the portion of crucible 11 and regulates refrigerant flow running through the hollow portion.

Method and device for producing monocrystals

The invention concerns a device for producing a monocrystalline solid phase (42) by solidifying a liquid phase (44), comprising: a crucible (40) suited for containing the solid phase (42) and the liquid phase (44) and whose at least one wall is provided for being in contact with the liquid phase, the solid phase being separated from the crucible by a gap (43); a means for heating the liquid phase and severing to create a thermal gradient at an interface (46) between the liquid phase and the solid phase, and; a means for generating an electromagnetic field (50) whereby being distinct from the heating means, for applying an electromagnetic pressure to the contact surface (48) of the liquid phase at said interface comprising at least one turn (50) surrounding the crucible and placed opposite the area in which said interface forms during operation.

Method for producing compound semiconductor single crystal and crystal growth apparatus

Single crystal production apparatus and process

Universal apparatus for elaborating semiconductive monocrystals

Universal apparatus for elaborating semiconductive monocrystals according to known methods, comprising a frame, a heating enclosure, heating means located in this enclosure and connected to an appropriate electric current generator, a vacuum system connected to the enclosure, means for admission of gases in the enclosure, and means for supporting, drawing and rotating the crystalline material during its elaboration. The heating enclosure is the same for all the methods inasmuch as the quantities of the crystalline material treated are comparable and comprises a cylindrical body fixed at a predetermined height to the frame for visual observation of the elaboration zone, the body being provided with two lateral flanges for ensuring the connection of the vacuum system or of an eventual generator of radiofrequency, and two caps, one lower cap and one upper cap, the caps being removably connected to the cylindrical body. The lower cap is provided with means for eventually supporting heating elements and further elements. The means for supporting, drawing and rotating, which differ completely or partly according to the used method, are constituted by modular units provided with identical assemblage means between themselves and with the caps of the enclosure in such a way as to permit the positioning above the upper cap and below the lower cap modular units suitable for the chosen method. At least one of the upper modular units is provided with means for providing its assembling with a first slide displaceable on guides provided on the frame, and at least one of the lower modular units is provided with means for providing its assembling with a second slide displaceable on the same guides. Each slide is provided with fixation means to a nut, the nut being activated by a main screw running along the guides of the frame and with accurate positioning means and locking means at predetermined spots of the guides.

Single Crystal Manufacturing Equipment and Manufacturing Method

본발명은 쵸코랄스키법에 의해 결정을 인상할때에 사용하는 장치 및 그 장치를 이용하여 결정을 제조하는 방법에 있어서, 특히 인상결정의 온도 분포, 열이력을 자재로 제어함으로써, 결정의 제조효율 및 품질을 향상시킬 수 있는 단결정 제조장치 및 제조방법에 관한 것이다. The present invention relates to a device used for pulling up a crystal by the Chocoralski method and a method for producing a crystal using the device, in particular, by producing a crystal by controlling the temperature distribution and thermal history of the pulling crystal with a material. The present invention relates to a single crystal manufacturing apparatus and a manufacturing method capable of improving efficiency and quality. 본발명은 상단을 인상챔버천정에 기밀결합하고, 하단을 도가니내의 용융액 표면에 근접시킨 인상단결정봉을 동축으로 둘러싸는 원통(19)를 갖는, 쵸코랄스키법에 의한 단결정 제조장치에 있어서, 상기 원통(19)의 하단부에 결정표면과 석영도가니 내벽과 용융액 표면으로 둘러싸여져 있으며, 용융액으로부터 상방에 인상결정의 반경에 상당하는 높이를 갖는 공간의 30-95 용량%를 차지하는 크기의 열차폐체(25)를 설치한 것을 특징으로 하는 단결정 제조장치 및 그 장치를 이용하여 단결정을 제조하는 방법, 인상결정의 온도분포, 열이력을 제어하는 방법, 나아가 그 방법에 의해 제조된 단결정을 제공한다. In the present invention, there is provided a single crystal manufacturing apparatus by the Chocoralski method, which has a cylinder (19) coaxially surrounding a pulling single crystal rod in which the upper end is hermetically bonded to the pulling chamber ceiling and the lower end is brought close to the surface of the melt in the crucible. A heat shield (25) surrounded by a crystal surface, an inner surface of a quartz crucible, and a molten liquid surface at the lower end of the cylinder (19), occupying 30-95% by volume of the space having a height corresponding to the radius of the pulling crystal upward from the molten liquid (25). Provided is a single crystal manufacturing apparatus and a method for producing a single crystal using the apparatus, a method for controlling the temperature distribution of a pulling crystal, a thermal history, and further, a single crystal manufactured by the method. 본발명에서도 충분한 열차폐효과를 갖는 열차폐체(25)를 구비하는 것으로써, 인상 단결정의 구경이 크게 되더라도 인상속도가 저하하지 않고, 또한 고액(固液)표면 전체에서의 온도의 균일화가 개선되고, 단결정화율의 저하도 없으며, 결정열이력, 결정의 온도분포를 용이하고도 정밀하게 제어할 수 있는 ...

Device for crucible-free zone melting

Silica glass crucible

为了提供一种二氧化硅玻璃坩埚，其中当在高温下使用所述坩埚来拉制硅单晶时不存在出现凹陷和皱缩的问题。用来拉制硅单晶的二氧化硅玻璃坩埚，其中坩埚壁部分的至少一个外表面上布有长度小于200μm、宽度小于30μm和深度从大于3μm到小于30μm的细槽。优选地，所述细槽通过喷砂处理和氢氟酸蚀刻形成，并分布于该坩埚的10％以上的外表面上，坩埚的外表面在1500℃下对碳的滑动摩擦系数大于0.6。

POWER SUPPLY IN COAXIAL BUILDING FOR INDUCTION HEAT COILS BY DIGEL-FREE ZONE MELTING

Zone melting apparatus

In the zone refining of a rod of silicon or <PICT:0847189/III/1> <PICT:0847189/III/2> germanium by the passage therethrough of a molten zone produced by a suitably energized induction coil, a second induction coil energized at a frequency insufficient of itself to melt the rod is placed below the first coil to enable the formation of an enlarged molten zone. A third coil similar to the second coil may be placed above the first coil. The second and third coils may have one or more turns. They may each be upright or inverted frusto-conical shape. Fig. 2 illustrates two coils 44 and 36, and Fig. 3 three coils 44, 36, and 50. The rod may be preheated, e.g. by the longitudinal passage of a current therethrough. A current of 3-5 mc/s may be passed through the first coil, and a current of 500 kc/s through the second and third coils. Apparatus (Fig. 1, not shown) for supporting the rod is described.

Apparatus and method for diamond production

An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface, wherein a growth rate of the diamond is greater than 1 micrometer per hour.

Method and device for producing a single crystal

Apparatus for preventing heater electrode meltdown in single crystal pulling apparatus

本发明的目的是防止用来向坩埚103用的加热器104提供电流的导电金属电极5，5熔化下坠。开关11控制电源的通断。安培表10a连续地测量流过加热器104的电流。在中间电极6下部出现裂缝8的情况下，在电极5，5烷化下坠之前，由于裂缝8处出现放电现象，电流测量值会出现细小的波动。因此，如果安培表10a测量的电流波动超出允许范围，则控制器12切断开关11，从而切断电极5，5的电源，并防止电极5，5熔化下坠。

Crystal growth crucible lid

A lid for a crystal growth chamber crucible is constructed by forming arcuate sector-shaped portions and coupling them in abutting relationship, for example by welding, to form an annular profile fabricated lid. The arcuate sector-shaped portions may be formed and removed from a lid fabrication blank with less waste than when unitary annular lids are formed and removed from a similarly sized fabrication blank. For example, the sector-shaped portions may be arrayed in an undulating pattern on the fabrication sheet.

Method and apparatus for producing a single crystal

THE INVENTION RELATES TO A METHOD FOR PRODUCING A SILICON SINGLE CRYSTAL IN AN INERT-GAS FLUSHED PULLING CHAMBER BY PULLING THE SINGLE CRYSTAL FROM A MELT BY THE CZOCHRALSKI METHOD. THE INVENTION ALSO RELATES TO AN APPARATUS FOR CARRYING OUT THE METHOD. THE METHOD COMPRISES@A)PROVIDING IN THE PULLING CHAMBER A FIRST INNER CHAMBER AND A SECOND INNER CHAMBER, EACH OF WHICH IS DELINEATED BY SIDE, TOP AND BOTTOM BOUNDARIES;@B)PASSING A FISRT INERT GAS STREAM THROUGH THE TOP BOUNDARY OF THE FISRT INNER CHAMBER INTO THE FIRST INNER CHAMBER, WHICH CONTAINS A HEAT SHIELD, WHICH IS DISPOSED AROUND THE SINGLE CRYSTAL, AND A CRUCIBLE CONTAINING THE MELT, AND @C)PASSING A SECOND INERT GAS STREAM THROUGH THE BOTTOM BOUNDARY OF THE SECOND INNER CHAMBER INTO THE SECOND INNER CHAMBER, WHICH CONTAINS A HEATING DEVICE FOR HEATING THE CRUCIBLE, WITH THE PROVISO THAT THE FIRST INERT GAS STREAM AND THE SECOND INERT GAS STREAM ARE ONLY ABLE TO MIX, AT THE EARLIEST, AFTER LEAVING THE INNER CHAMBERS.

A single-shot semiconductor processing system and method having various irradiation patterns

High throughput systems and processes for recrystallizing thin film semiconductors that have been deposited at low temperatures on a substrate are provided. A thin film semiconductor workpiece (170) is irradiated with a laser beam (164) to melt and recrystallize target areas of the surface exposed to the laser beam. The laser beam is shaped into one or more beamlets using patterning masks (150). The mask patterns have suitable dimensions and orientations to pattern the laser beam radiation so that the areas targeted by the beamlets have dimensions and orientations that are conducive to semiconductor recrystallization. The workpiece is mechanically translated along linear paths relative to the laser beam to process the entire surface of the work piece at high speeds. Position sensitive triggering of a laser can be used generate laser beam pulses to melt and recrystallize semiconductor material at precise locations on the surface of the workpiece while it is translated on a motorized stage (180).

Thermal insulation cylinder for silicon single crystal pulling equipment

Device for producing single crystals

A device is made available for producing monocrystals, for example large-diameter gallium arsenide monocrystals, that has a cylindrical heating appliance with a floor heater ( 2 ) and a cover heater ( 3 ). The heating surfaces of the floor and the cover heater are considerably larger than the cross-sectional area of the monocrystal to be produced. In addition, an insulator ( 6 ) is planned for the reaction space that is designed to prevent a radial heat flow and the guarantee a strictly axial heat flow over the complete height of the reaction space between the cover heater ( 3 ) and the floor heater ( 2 ).

Heater electrode erosion prevention device in single crystal pulling device

Process for producing single crystal of compound semiconductor and crystal growing apparatus

In a production method for producing a compound semiconductor single crystal by LEC method using a crystal growth apparatus with a double crucible structure, it was made to grow up a crystal by covering the second crucible with a plate-like member having a pass-through slot for being capable of introducing a crystal pulling-up shaft having a seed crystal holding part at a tip into the second crucible and creating a state where an atmosphere within the second crucible scarcely changes (a semi-sealed structure).

Semiconductor single crystal manufacturing equipment and graphite crucible

반도체 집적 회로용 웨이퍼의 재료로 사용되는 높은 산소 농도의 단결정으로부터 낮은 산소 농도의 단결정까지, 소정의 산소 농도 규격 범위에서 높은 수율로 제조할 수 있는 반도체 단결정 제조 장치를 제공한다. 도가니(3)를 측면 둘레측으로부터 가열하는 히터(4a, 4b, 4c)의 각각 인접하는 히터 사이의 원환 형상 영역의 전체 둘레에 걸쳐 열 차폐물(20, 21)이 형성되어 있다. 열 차폐물(20, 21)에 의해, 상기 히터의 각 가열 영역을 국소화하고, 도가니(3) 및 도가니 내 용융액(8)의 온도 분포를 능동적으로 제어함으로써, 높은 산소 농도의 단결정으로부터 낮은 산소 농도의 단결정까지, 소정의 산소 농도 규격 범위에서 높은 수율로 제조할 수 있다. Provided is a semiconductor single crystal manufacturing apparatus that can be produced in a high yield in a predetermined oxygen concentration standard range, from a single crystal of high oxygen concentration to a single crystal of low oxygen concentration used as a material for a semiconductor integrated circuit wafer. Heat shields 20 and 21 are formed over the entire circumference of the annular region between the heaters 4a, 4b and 4c that respectively heat the crucible 3 from the side circumferential side. The heat shields 20 and 21 localize each heating region of the heater and actively control the temperature distribution of the crucible 3 and the melt 8 in the crucible, thereby reducing the low oxygen concentration from the single crystal of the high oxygen concentration. Up to a single crystal can be produced in a high yield in a predetermined oxygen concentration standard range. 반도체 단결정, 열 차폐물, 웨이퍼, 흑연 도가니 Semiconductor Monocrystalline, Heat Shield, Wafer, Graphite Crucible

Apparatus and method for producing a crystal of semiconductor material

Vorrichtung zur Herstellung eines Kristalls aus Halbleitermaterial, umfassend einen Tiegel mit einem Tiegelboden und mit einer Tiegelwand, wobei der Tiegelboden eine Oberseite und eine Unterseite und eine Vielzahl von Durchtritts-Öffnungen aufweist, die zwischen der Tiegelwand und einem Zentrum des Tiegelbodens angeordnet sind, und wobei auf der Oberseite und auf der Unterseite des Tiegelbodens Aufwölbungen vorhanden sind; und eine Induktionsheizspule, die unter dem Tiegel angeordnet ist und zum Schmelzen von Halbleitermaterial und zum Stabilisieren einer Schmelze aus Halbleitermaterial vorgesehen ist, die einen wachsenden Kristall aus Halbleitermaterial bedeckt.

Patent TWI354717B

Process for Producing Single Crystal

본 발명은, 쵸크랄스키 법에 의해 챔버내에서 단결정을 원료융액에서 인상하여 제조하는 방법에 있어서, 지름 방향으로 링상으로 발생하는 OSF 영역의 외측이고, 또한 격자간형 및 공공형의 결함이 존재하지 않는 무결함 영역의 단결정을 인상함과 동시에, 상기 단결정 인상은, 단결정의 융점에서 950℃까지의 온도대를 통과할 때의 냉각 속도의 평균값이, 0.96℃/min 이상인 범위, 1150℃에서 1080℃까지의 온도대를 통과할 때의 냉각 속도의 평균값이, 0.88℃/min 이상인 범위, 1050℃에서 950℃까지의 온도대를 통과할 때의 냉각 속도의 평균값이, 0.71℃/min 이상인 범위, 가 되도록 제어하여 행하는 것을 특징으로 하는 단결정 제조 방법을 제공한다. 이에 의해, 무결함 영역의 단결정을 인상할 때의 제조 마진을 큰 폭으로 확대할 수 있고, 따라서, 무결함 영역 결정의 제조 수율, 생산성을 큰 폭으로 향상할 수 있는 단결정 제조 방법을 제공할 수 있다. The present invention is a method for producing a single crystal from a raw material melt in a chamber by the Czochralski method, which is outside of an OSF region occurring in a ring shape in the radial direction, and there are no lattice and void defects. While raising the single crystal in the non-defective area, the single crystal pulling is performed at a temperature of 1150 ° C to 1080 ° C in a range where the average value of the cooling rate when passing through the temperature range from the melting point of the single crystal to 950 ° C is 0.96 ° C / min or more. The range where the average value of the cooling rate when passing through the temperature range until is 0.88 degreeC / min or more, The range whose average value of the cooling rate when passing through the temperature range from 1050 degreeC to 950 degreeC is 0.71 degreeC / min or more, Provided is a method for producing a single crystal, characterized in that the control is carried out as desired. Thereby, the manufacturing margin at the time of raising the single crystal of the defect free area | region can be enlarged significantly, Therefore, the single crystal manufacturing method which can improve the manufacturing yield and productivity of a defect free area crystal | crystallization significantly can be provided. have. 단결정, 결함, 냉각속도, 성장속도, 마진 Single crystal, defect, cooling rate, growth rate, margin

METHOD AND DEVICE FOR MANUFACTURING A SINGLE CRYSTAL, FREE OF ANY CONSTRAINT, OF A FERROELECTRIC COMPOUND WITH A CRYSTALLINE STRUCTURE

Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot

A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion. Without inviting high cost and large size of the manufacturing apparatus, the oxygen concentration distribution in the axial direction of the single crystal semiconductor, the diameter of the single crystal semiconductor, and the minute fluctuation of the oxygen concentration in the axial direction are controlled.

Induction heating coil for crucible-free zone melting of semiconductor rods

Device and method for producing a single crystal

Apparatus for growing high quality silicon single crystal ingot and growing method using the same

The invention relates to an apparatus and method for growing a high quality Si single crystal ingot and a Si single crystal ingot and wafer produced thereby. The growth apparatus controls the oxygen concentration of the Si single crystal ingot to various values thereby producing the Si single crystal ingot with high productivity and extremely controlled growth defects.

Device for crucible-free zone melting

Heating coil for use in growth of single crystal

A coil for use in growing a single crystal by using a floating zone method is formed as an annular single-turn coil having a wedge-like configuration in vertical section so as to progressively increase in thickness from inner circumference to outer circumference of the coil. The surface of the annular body of the coil positioned on the polycrystalline side is radially sloped upward, around the circumferences, with an elevation angle with respect to a plane perpendicular to the crystal growth axis. The coil has an annular thin projection, which projects upwardly from the coil on the polycrystalline side, is planted at or near the inner circumference thereof. The annular thin projection serves to increase magnetic flux density around its tip portion, thereby enabling polycrystalline portion near the tip portion to be easily melted so that the polycrystalline portion positioned above the annular projection forms a slight recess which is configured so as to overhang slightly downward near the edge and cover a substantial portion of the top side of the coil. Accordingly, dissipation of heat is suppressed and generation of an icicle-like projection prevented.

Semiconductor single crystal manufacturing method

Apparatus and process for producing single crystal

이 발명은 성장하는 단결정을 차폐하며, 융용물 위에 있는 전로챔버를 내부와 외부로 분할하는 튜브형상 또는 원뿔형상 본체를 구성하며, 그 본체는 적어도 하나의오리피스를 구비하여 그 오리피스를 통하여 전로챔버의 내부로 안내되는 불활성가스를 그 전로의 외부로 직접 통과하도록 구성하는 초크랄스키방법에 의한 실리콘구성단결정 제조장치에 관한것이다. The present invention shields a growing single crystal and constitutes a tubular or conical body that divides the converter chamber on the melt into an interior and exterior, the body having at least one orifice and through the orifice of the converter chamber. The present invention relates to a device for producing a silicon single crystal by the Czochralski method, which is configured to pass an inert gas guided to the outside of the converter directly. 이 발명은 불활성가스스트림 일부가 튜브형상 또는 원뿔형상본체내에서 적어도 하나의 오리피스를 통하여 전로챔버의 내부에서 그 외부로 안내되도록 함을 특징으로하는 초크랄스키방법에 의한 실리콘구성 단결정의 제조방법에 관한것이다. The present invention relates to a method for producing a silicon-constituent single crystal by the Czochralski method, characterized in that a portion of the inert gas stream is guided from inside of the converter chamber to the outside through at least one orifice in a tubular or conical body. will be.

Method for making monocrystal silicon and wafer by controlling pulling-speed distribution and products thereof

一种硅锭按一拉晶速率分布下进行,其拉速要足够高以限制间隙凝聚,且还要足够低以便将空位凝聚限定在晶锭轴向上的富含空位区上。将晶锭切割成许多半纯晶片,每个晶片在中央具有富含空位区,包括空位凝聚,和在富含空位区与晶片边缘之间的纯度区,无空位凝聚和间隙凝聚。按照本发明的另一方面,晶锭可按一拉晶速率分布拉制硅锭,其拉速要足够高以便防止间隙凝聚,且还要足够低以便防止空位凝聚。因此,当将该晶锭切割成晶片时,晶片为纯硅晶片,可包含点缺陷,但无空位凝聚团的间隙凝聚团。

Apparatus for positively doping semiconductor crystals during zone melting

A method and apparatus for positively introducing dopants into semiconductor crystals via crucible-free zone melting whereby a polycrystalline rod is mounted at opposite ends thereof in a housing which includes an annular induction heating coil surrounding a section of the rod for producing a melt zone at such section and a thin dopant source rod having a predetermined amount of dopant therein is controllably fed into the melt zone so that a positively determinable amount of dopant is provided in the recrystallized rod.

Patent FR2039037A5

Method and mechanism for lifting gas flow-guide cylinder of a crystal pulling apparatus

A method and a mechanism for lifting a gas flow-guide cylinder of a crystal pulling apparatus are disclosed. The crystal pulling apparatus includes a crucible for accommodating a crystalline material and for melting the crystalline material through heating, and a gas flow-guide cylinder capable of being moved upward/downward above the crucible. The crystal pulling apparatus is operated to grow a single crystal from the crystalline material by a pulling method. When a solid crystalline material is to be placed in the crucible, the gas flow-guide cylinder is moved upward to thereby separate the bottom end of the gas flow-guide cylinder away from the top portion of the crucible. This prevents the crystalline material from coming into contact with the gas flow-guide cylinder.

Heat shielding member of silicon single crystal pulling system

A heat shielding member is provided in a device pulling up a silicon single crystal rod from a silicon melt stored in a quartz crucible, and equipped with a tube portion which shields radiant heat from the heater surrounding the outer peripheral face of the silicon single crystal rod, a swelling portion provided at the lower portion of the tube portion, and a ring-shape heat accumulating portion provided at the inside of the swelling portion. The heat accumulating portion is a thermal conductivity of 5 W/(m·° C.) or less, its inner peripheral face is a height (H 1 ) of 10 mm or more and d/2 or less when the diameter of the silicon single crystal rod is referred to as d and the minimum distance (W 1 ) between the outer peripheral face of the silicon single crystal rod and the inner peripheral face of the heat accumulating portion is formed so as to be 10 mm or more and 0.2 d or less, a vertical distance (H 2 ) between the upper rim of the outer peripheral face and the lowest portion of the heat accumulating portion is 10 mm or more and d or less, and the minimum distance (W 2 ) between the inner peripheral face of the quartz crucible and the outer peripheral face of the heat accumulating portion is 20 mm or more and d/4 or less.