Method for producing compound semiconductor single crystal and crystal growth apparatus

08-04-2009 дата публикации

Номер:

JP4252300B2

Автор: 篤俊荒川, 聰明朝日, 貴幸矢辺, 賢次佐藤

Принадлежит: Nippon Mining and Metals Co Ltd

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

C C3 C30 C30B C30B1 C30B15 C30B15/C30B15/1 C30B15/12 C30B2 C30B27 C30B27/C30B27/0 C30B27/02 C30B29 C30B29/C30B29/4 C30B29/48 Y Y1 Y10 Y10T Y10T1 Y10T11 Y10T117 Y10T117/Y10T117/1 Y10T117/10 Y10T117/106 Y10T117/1068 Y10T117/107 Y10T117/1072 Y10T117/108 Y10T117/1088

IPC - классификация

C C3 C30 C30B C30B1 C30B15 C30B15/C30B15/1 C30B15/12 C30B2 C30B29 C30B29/C30B29/4 C30B29/48 C30B29/5 C30B29/50

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