22-08-2023 дата публикации
Номер: CN116621575A
Принадлежит:
The invention discloses a preparation method of heavily-doped ITO (indium tin oxide) powder, which comprises the following steps: step 1, preparing In and Sn salt solutions according to the mass fraction of SnO2 of 6%, co-precipitating to prepare indium tin hydroxide, and calcining to obtain ITO powder in a complete solid solution state; step 2, adding SnO2 into the ITO powder in the step 1 according to the mass fraction of 4%, and mechanically and uniformly mixing; compared with the prior art, the method has the advantages that the Sn element of the prepared powder is uniformly distributed in an In2O3 phase solid solution and particles, the solid solution and segregation phenomena in the later sintering process are avoided, the uniformity and the electrical stability of the structure components of the ITO target material can be greatly improved, meanwhile, the chemical migration process in the sintering process is shortened, and the yield of the ITO target material is improved. And the ...
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