30-05-2023 дата публикации
Номер: CN116190442A
Принадлежит:
The invention relates to the technical field of semiconductors, and provides a semiconductor power device and a preparation method thereof, the semiconductor power device comprises a semiconductor layer, a source electrode, a grid electrode, a semiconductor region, well regions and a JFET region, the JFET region is formed in the semiconductor layer between the two well regions, and the JFET region is provided with a part overlapped with the grid electrode, the ion doping concentration in the JFET region is 1E16-1E18cm <-3 >, and the conduction type of the JFET region is the same as that of the semiconductor layer. According to the invention, the JFET region is formed in the semiconductor layer between the well regions, the JFET region is provided with the part overlapped with the grid electrode, and the area of the overlapped part can be used for changing the forward on resistance of the device and the MOS capacitance of the grid end; therefore, the modulation of the switching characteristics ...
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