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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Применить Всего найдено 10. Отображено 10.
11-07-2023 дата публикации

Semiconductor device and manufacturing method thereof

Номер: CN116417486A
Автор: ZHONG JIXIAN, WANG ZIRUI, WANG QUANZHONG, XU CIXUAN, YANG DUNNIAN, ZHAO YIPING
Принадлежит:

The embodiment of the invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes a first chip including a plurality of photosensitive devices, where the plurality of photosensitive devices form a first array. The semiconductor device includes a second chip bonded to the first chip, the second chip including: a plurality of pixel transistor groups, in which the plurality of pixel transistor groups form a second array; and a plurality of input/output transistors, wherein the plurality of input/output transistors are disposed outside the second array. The semiconductor device includes a third chip bonded to the second chip and including a plurality of logic transistors.

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Номер записи: 1
14-07-2023 дата публикации

Image sensor and forming method thereof

Номер: CN116435319A
Автор: CHEN YANYU, JIANG YANTING, HUANG BAITAO, LU ZEHUA, XU CIXUAN, DING SHIFAN, LIU RENCHENG, YANG DUNNIAN
Принадлежит:

Various embodiments of the present invention are directed to an image sensor. The image sensor includes a substrate having a first side and a second side. The substrate includes a pixel region. The photodetector is located in the pixel region. The first doped region is in the pixel region. The second doped region is located in the pixel region. The second doped region is vertically between the first doped region and the first side of the substrate. The doped well is in the substrate and laterally surrounds the pixel region. The doped well portion is located in the second doped region. A portion of the second doped region is vertically between the doped well and the second side of the substrate. A trench isolation structure is in the semiconductor substrate and laterally surrounds the pixel region. The coverage area of the trench isolation structure is located in the coverage area of the doped well. The embodiment of the invention also relates to a method for forming the image sensor.

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Номер записи: 2
04-02-2004 дата публикации

影像感测器微透镜组、影像感测器及其制造方法

Номер: CN0001472818A
Автор: YANG DUNNIAN, WU SHOUGUO, DUNNIAN YANG, SHOUGUO WU, 杨敦年
Принадлежит:

An image micro-lens system, imaging sensors and producing method, providing a imaging sensors component and imaging sensors that can increase the resolution of image, has high efficiency of imaging sensitization, insure the light sensitivity of photo diode area, and producing method. The micro-lens system includes color filter, micro-convex, first dielectric layer and micro-concave mirror, the top and bottom surface of first dielectric have a plane by which is connected with color filter, and have a convexity that the same curvature with micro-concave and is connected with micro-concave; the imaging sensor includes the basement, the interconnect that is formed on the basement, the micro-lens system that is set on the interconnect and the photo diode that is formed in the basement.

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Номер записи: 3
23-06-2023 дата публикации

Image sensor and forming method thereof

Номер: CN116314221A
Автор: WANG ZIRUI, YANG DUNNIAN, WANG QUANZHONG, XU MINGJIE, XU WEICHENG, YAMASHITA YUICHIRO
Принадлежит:

Various embodiments of the present invention are directed to an image sensor. The image sensor includes a deep trench isolation (DTI) structure disposed in a substrate. The pixel region of the substrate is disposed within the inner perimeter of the DTI structure. The photodetector is disposed in the pixel region of the substrate. The gate electrode structure is at least partially overlying the pixel region of the substrate. The first gate dielectric structure is partially overlying the pixel region of the substrate. The second gate dielectric structure is partially overlying the pixel region of the substrate. A gate electrode structure overlies a portion of the first gate dielectric structure and a portion of the second gate dielectric structure. The first gate dielectric structure has a first thickness. The second gate dielectric structure has a second thickness greater than the first thickness. The embodiment of the invention also provides a method for forming the image sensor.

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Номер записи: 4
07-04-2023 дата публикации

Single photon avalanche detector devices and semiconductor structures and methods of forming same

Номер: CN115939249A
Автор: CHIEN HUNG-CHANG, LIN RONGYI, XU MINGJIE, HUANG GUANJIE, WANG ZIRUI, HUANG SHIMIN, WANG QUANZHONG, YANG DUNNIAN, ZHU YIXIN, CHEN XIANGLIN
Принадлежит:

In some embodiments, the present disclosure relates to a single photon avalanche detector (SPAD) device that includes a silicon substrate that includes a recess in an upper surface of the silicon substrate. A p-type region is disposed in the silicon substrate below the lower surface of the recess. An n-type avalanche region is disposed in the silicon substrate below the p-type region and intersects the p-type region at a p-n junction. A germanium region is disposed within the recess over the p-n junction. In accordance with other embodiments of the present application, semiconductor structures and methods of forming the same are also provided.

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Номер записи: 5
23-05-2023 дата публикации

Integrated chip and method of forming integrated chip

Номер: CN116153905A
Автор: TAKAHASHI SEIJI, WANG QUANZHONG, YANG DUNNIAN, LIN RONGYI, SHI JUNJI, KALNITSKY ALEXANDER, HUANG YIMIN, LIAO JIAQING, HONG SEUNG HWI
Принадлежит:

In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a dielectric structure disposed on the substrate; a plurality of conductive interconnect layers disposed within the dielectric structure, where the plurality of conductive interconnect layers includes alternating layers of interconnect wires and interconnect vias; and a metal-insulator-metal (MIM) capacitor disposed within the dielectric structure and including a lower conductive electrode separated from the upper conductive electrode by a capacitor dielectric structure wherein the metal-insulator-metal capacitor extends vertically through two or more of the plurality of conductive interconnect layers, the metal-insulator-metal capacitor includes a plurality of protrusions extending outwardly from a lower surface of the upper conductive electrode, where the plurality of protrusions are disposed back at a non-zero distance from an outermost sidewall of the upper conductive electrode. The ...

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Номер записи: 6
04-08-2023 дата публикации

Structure and method for backside illuminated image device

Номер: CN116544252A
Автор: YANG HAOLIN, WANG JUNZHI, WANG ZIRUI, WANG QUANZHONG, YANG DUNNIAN
Принадлежит:

The invention relates to a structure and a method of a backside illuminated image device. An image sensor structure includes a first substrate having a front side and a back side; a photodetector disposed on a front side of the first substrate and spanning a dimension Dp along a first direction; a gate electrode formed on a front side of the first substrate and partially overlapping the photodetector; a doped region, as a floating diffusion region, formed on the front side of the first substrate and disposed close to the photodetector; and an interconnect structure disposed on the front side of the first substrate and overlying the gate electrode. The interconnect structure includes a first metal layer and a second metal layer over the first metal layer, the second metal layer further including a first metal feature and a second metal feature, the first metal feature and the second metal feature being spaced apart by a distance Ds along the first direction, the first metal feature being ...

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Номер записи: 7
22-08-2023 дата публикации

Image sensor and forming method thereof

Номер: CN116632019A
Автор: HUANG WEIZHI, CAI SHUANGJI, LIN XINGZHI, LIU RENCHENG, YANG DUNNIAN
Принадлежит:

Image sensors and methods of forming the same are provided. An image sensor according to the present invention comprises: a first photodiode disposed between a second photodiode and a third photodiode in a direction; a first deep trench isolation (DTI) feature disposed between the first photodiode and the second photodiode; and a second DTI component disposed between the first photodiode and the third photodiode. A depth of the first DTI feature is greater than a depth of the second DTI feature. The quantum efficiency of the second photodiode is less than the quantum efficiency of the first photodiode.

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Номер записи: 8
13-08-2021 дата публикации

Integrated circuit die, three-dimensional integrated circuit stack, and method of forming integrated circuit

Номер: CN113257796A
Автор: GAO MINFENG, YANG DUNNIAN, LIN XINGZHI, LIU RENCHENG, ZHU YIXIN, CHEN PINZI, CHEN ZHEWEI, 高敏峰, 杨敦年, 林杏芝, 刘人诚, 朱怡欣, 陈品孜, 陈哲纬
Принадлежит:

In some embodiments, the present disclosure relates to a three-dimensional integrated circuit (IC) stack including a first integrated circuit die bonded to a second integrated circuit die. The first integrated circuit die includes a first semiconductor substrate, a first interconnect structure disposed on a front side of the first semiconductor substrate, and a first bonding structure disposed over the first interconnect structure. The second integrated circuit die includes a second semiconductor substrate, a second interconnect structure disposed on a front side of the second semiconductor substrate, and a second bonding structure disposed on a back side of the second semiconductor substrate. The first engagement structure faces the second engagement structure. In addition, the three-dimensional integrated circuit stack includes a first backside contact extending from the second bonding structure to a backside of the second semiconductor substrate and thermally coupled to at least one ...

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Номер записи: 9
25-08-2023 дата публикации

Image sensor and forming method thereof

Номер: CN116646363A
Автор: CHEN XINHONG, YANG DUNNIAN, LIU RENCHENG, HONG BONG-KI, GUO WENCHANG, XU HONGWEN, LIU SHICHANG
Принадлежит:

In some embodiments, the present disclosure relates to an image sensor, methods for forming an image sensor and related device structures. A backside deep trench isolation (BDTI) structure separating a plurality of pixel regions is formed in a substrate. The BDTI structure surrounds the plurality of photodiodes and includes a first BDTI component disposed at an intersection of the plurality of pixel regions and a second BDTI component disposed at a remaining perimeter of the plurality of pixel regions. The first BDTI component has a first depth from the backside of the substrate that is less than a second depth of the second BDTI component.

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Номер записи: 10