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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 52. Отображено 52.
25-05-2018 дата публикации

METHOD FOR MANUFACTURING THERMOELECTRIC MATERIAL WITH HIGH EFFICIENCY AND METHOD FOR MANUFACTURING THERMOELECTRIC MODULE

Номер: KR1020180055227A
Принадлежит:

A disclosed method for manufacturing a thermoelectric material includes the steps of: forming a first molded body from powder of a thermoelectric substance with a layered structure; forming an extruded body by extruding the first molded body; forming a plurality of slices by cutting the extruded body along a cross section which is vertical to an extruding direction; and forming a second molded body by stacking and pressing the slices in a direction which is vertical to the extruding direction. Accordingly, the thermoelectric performance of the thermoelectric material and the manufacturing efficiency of a thermoelectric module can be improved. COPYRIGHT KIPO 2018 (S10) Preparing thermoelectric powder (S20) Firstly molding (S30) Extruding (S40) Cutting (S50) Secondly molding (S60) Sintering ...

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24-08-2018 дата публикации

SMART WEARABLE LENS MOUNTING ALL-SOLID-STATE THIN FILM SECONDARY BATTERY AND MANUFACTURING METHOD THEREOF

Номер: KR101891668B1

Disclosed is a smart wearable lens mounting an all-solid-state thin film secondary battery including a flexible substrate, a positive electrode current collector, a positive electrode, a solid-state electrolyte, a negative electrode, and a negative electrode current collector. The smart wearable lens mounting an all-solid-state thin film secondary battery can stably and continuously supply power and has a very low self-discharge rate. Also, the smart wearable lens mounting an all-solid-state thin film secondary battery can minimize rejections of a human body, and can be suitably used for a lens with a curved surface, in particular, a miniature lens such as a contact lens. COPYRIGHT KIPO 2018 (AA) FIG. 2a (BB) FIG. 2b (CC) FIG. 2c (DD) FIG. 2d (EE) FIG. 2e (FF) FIG. 2F ...

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22-01-2019 дата публикации

압전 에너지 하베스터 모듈

Номер: KR1020190007208A
Принадлежит:

... 압전 에너지 하베스터 모듈은, 바닥부 및 상기 바닥부의 외주면을 따라 상부로 형성되는 측벽부를 포함하는 하우징; 상기 바닥부와 대향하여 위치하고, 상기 하우징의 수납공간을 밀폐하는 덮개부; 일단이 상기 바닥부와 고정되고, 타 단이 상기 덮개부와 고정되는 적어도 하나 이상의 압전 에너지 하베스터 패널을 포함하되, 상기 하나 이상의 압전 에너지 하베스터 패널은 상기 하우징 내부에 수납되고, 일정한 곡률 반경으로 만곡된다. 상기 압전 에너지 하베스터 모듈은 그 구조가 간단하고, 외부 충격을 통해 압전 하베스터의 구조적 변형을 직접적으로 유도, 전기적 에너지로 변환시키므로, 고 변형 및 불특정 주파수를 갖는 충격으로부터 보다 효율적으로 에너지를 획득할 수 있다.

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15-02-2017 дата публикации

METHOD FOR PREPARING THERMOELECTRIC MATERIAL USING HETEROGENEOUS NANO PARTICLE

Номер: KR1020170017288A
Принадлежит:

The present invention relates to a method for preparing thermoelectric material using heterogeneous nano particle, comprising: a step of putting polycrystalline material and heterogeneous nano material into a container and grinding the same to make mixed powder; and a step of sintering the mixed powder. COPYRIGHT KIPO 2017 (AA) Start (BB) End (S100) Step of putting a polycrystalline material and a heterogeneous nano material into a container and grinding the same to make mixed powder (S200) Step of sintering the mixed powder ...

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01-12-2017 дата публикации

나노 압력 센싱 소자 및 방법

Номер: KR0101803288B1
Принадлежит: 한국과학기술연구원

... 본 발명은 제1 기판, 상기 제1 기판 상에 형성되는 제1 박막층, 상기 제1 박막층 또는 제1 기판에 압력을 가하는 나노 구조물 및 상기 압력에 의해 상기 제1기판과 상기 제1박막층 사이의 전류 변화를 감지함으로써 상기 압력을 측정하는 압력 측정부를 포함하는 나노 압력 센싱 소자 및 이를 이용한 압력 센싱 방법을 개시한다.

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29-11-2016 дата публикации

TIN OXYNITRIDE SINGLE CRYSTAL THIN FILM AND METHOD FOR FABRICATING SAME

Номер: KR1020160136109A
Принадлежит:

The present invention relates to a thin oxynitride single crystal thin film which has transparency and high conductivity through a stoichiometry control of anion, and a method for fabricating the same. The method for fabricating a thin oxynitride single crystal thin film includes depositing the thin oxynitride single crystal thin film having SnO_zN_(1-z) (0.35 Подробнее

11-01-2017 дата публикации

DEVICE AND METHOD FOR SENSING NANOSCALE PRESSURE

Номер: KR1020170004113A
Принадлежит:

The present invention discloses a device and a method for sensing nanoscale pressure. The device for sensing nanoscale pressure comprises: a first substrate; a first thin film layer formed on the first substrate; a nanostructure for applying pressure to the first thin film layer or the first substrate; and a pressure measuring unit measuring the pressure by sensing a change in current between the first substrate and the first thin film layer by the pressure. COPYRIGHT KIPO 2017 ...

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27-04-2017 дата публикации

SILVER SUBSTITUTED STRONTIUM NIOBATE DIELECTRIC COMPOSITION AND METHOD FOR MANUFACTURING SAME

Номер: KR1020170045593A
Принадлежит:

Embodiments relate to a silver substituted strontium niobate dielectric composition and a method for manufacturing the silver substituted strontium niobate dielectric composition expressed by the general formula of KSr_2(1-x)Ag_2xNb_3O_10 in which x exceeds 0 and is equal to or less than 1. The K may be substituted with H in another embodiment. COPYRIGHT KIPO 2017 ...

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11-01-2019 дата публикации

이차원 이황화주석 박막의 형성 방법

Номер: KR0101937293B1
Принадлежит: 한국과학기술연구원

... 본 발명은 기판 상에 산화주석 박막을 형성하는 단계 및 산화주석 박막을 황화처리하는 단계를 포함하는 이황화주석 박막 형성 방법에 관한 것이다.

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03-08-2018 дата публикации

ZINC-DOPED TIN OXIDE BASED TRANSPARENT CONDUCTIVE OXIDE, MULTILAYERED TRANSPARENT CONDUCTIVE FILM USING SAME AND MANUFACTURING METHOD THEREOF

Номер: KR101884643B1

The transparent conductive thin film is composed of Zn_ xSn_1-xO_2, and is amorphous, wherein x is more than 0 and not more than 0.12. The transparent conductive thin film structure includes a metal layer, and includes a first transparent conductive oxide layer and a second transparent conductive superconducting layer formed on lower and upper portions of the metal layer, respectively, to be the same as the transparent conductive thin film. Since the transparent conductive thin film structure can be manufactured at room temperature and has excellent optical characteristics and electrical characteristics, the transparent conductive thin film structure can be used as a transparent electrode of various electric elements, especially flexible elements. COPYRIGHT KIPO 2018 ...

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11-12-2015 дата публикации

APPARATUS FOR GENERATING HYBRID ENERGY

Номер: KR1020150139282A
Принадлежит:

The present invention relates to an apparatus for generating hybrid energy by coupling different types of energy generating means. According to the present invention, the apparatus for generating hybrid energy includes a first layer having at least one piezoelectric part including a piezoelectric material, and a second layer having at least one static part including a static material. The piezoelectric part generates piezoelectric energy in accordance with pressure by an external force applied to the first layer, and the static part generates static energy by contact or separation between the first layer and the second layer by an external force. COPYRIGHT KIPO 2016 ...

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06-12-2018 дата публикации

POWDER COATING METHOD AND POWDER COATING APPARATUS

Номер: KR101926042B1

Disclosed is a powder coating method, which comprises the following steps of: charging powder into a reaction chamber; forming a coating layer on the surface of the powder through atomic layer deposition by providing source gas into the reaction chamber; and providing vibration generated from the outside of the reaction chamber to the reaction chamber when a reaction for forming the coating layer on the surface of the powder is in progress. COPYRIGHT KIPO 2019 ...

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28-06-2018 дата публикации

METHOD FOR FORMING TWO-DIMENSIONAL TIN DISULFIDE THIN FILM

Номер: KR1020180071643A
Принадлежит:

The present invention relates to a method for forming a two-dimensional tin disulfide thin film. The method for forming a two-dimensional tin disulfide thin film comprises the steps of: forming a tin oxide thin film on a substrate; and sulfurating the tin oxide thin film. The method for forming a two-dimensional tin disulfide thin film according to the present invention can control the number and thickness of tin sulfide thin films, and form tin disulfide thin films with high purity, which are uniform in a large area. Moreover, the method for forming a two-dimensional tin disulfide thin film can form tin disulfide thin films having a thickness of sub-nanometers. COPYRIGHT KIPO 2018 (AA) Start (BB) End (S1) Form a tin oxide thin film on a substrate (S2) Sulfurate the tin oxide thin film ...

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03-11-2017 дата публикации

곡면형 압전장치

Номер: KR0101793225B1
Принадлежит: 한국과학기술연구원

... 본 발명은 곡면기판의 일면 또는 양면 상에 압전물질이 구비되는 구조를 제시함과 함께 곡면기판과 압전물질의 두께 및 탄성계수를 제어하여 중립면(neutral plane)의 위치가 곡면기판 내부에 위치되도록 함으로써 외부의 기계적 응력에 대응한 압전물질의 전기적 포텐셜(electrical potential)을 최대화할 수 있는 곡면형 압전장치에 관한 것으로서, 본 발명에 따른 곡면형 압전장치는 곡면기판; 및 상기 곡면기판의 일면 또는 양면 상에 구비된 압전물질을 포함하여 이루어지며, 응력 인가시 압축응력과 인장응력이 균형을 이루는 중립면은 곡면기판 내부에 위치하며, 상기 중립면의 위치는 아래 식 1의 y1와 y2에 의해 결정되며, 상기 중립면의 위치는, 곡면기판과 압전물질 각각의 두께(d), 탄성계수(E)의 조절에 의해 제어 가능한 것을 특징으로 한다. (식 1) , (여기서, )(y1은 곡면기판의 중심선과 중립면 사이의 거리, y2는 압전물질의 중심선과 중립면 사이의 거리, d1은 곡면기판의 두께, d2는 압전물질의 두께, E1은 곡면기판의 탄성계수, E2는 압전물질의 탄성계수) ...

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28-11-2017 дата публикации

고효율 열전 소재 및 그 제조 방법

Номер: KR0101801787B1
Принадлежит: 한국과학기술연구원

... 본 발명은 열전 소재를 제조하는 방법으로서, 열전 파우더를 준비하는 단계; 상기 열전 파우더를 금속 산화물로 코팅하는 단계; 상기 금속 산화물로 코팅된 열전 파우더를 가압 성형하여 열전 소재를 형성하는 단계; 상기 열전 소재를 소결하는 단계; 및 상기 열전 소재를 열처리하는 단계를 포함한다.

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26-10-2015 дата публикации

HYBRID ONE-CHIP GAS SENSOR ARRAY

Номер: KR1020150119603A
Принадлежит:

The present invention relates to a hybrid array gas sensor, and provides a hybrid one-chip gas sensor array which comprises: a substrate; a heater uniformly formed on an upper surface of the substrate; a heater electrode connected to the heater for operating the heater; an insulating layer which covers the heater and the heater electrode, and is formed on an upper unit of the substrate; a plurality of sensing electrodes, and sensing electrode arrays formed by being spaced at certain intervals on an upper surface of the insulating layer; and a plurality of gas detecting units individually formed on the sensing electrodes. The gas detecting units are different two or more modules selected among a group composed of an oxide thin film sensor module, a nanostructure sensor module, a thin film sensor module having a metal catalyst, and a nanostructure module having a metal catalyst. COPYRIGHT KIPO 2016 ...

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23-06-2017 дата публикации

THERMOELECTRIC MATERIAL OF HIGH EFFICIENCY AND METHOD FOR MANUFACTURING SAME

Номер: KR1020170071235A
Принадлежит:

The present invention relates to a method of manufacturing a thermoelectric material with improved performance index. The method comprises a step of preparing thermoelectric powder; a step of coating the thermoelectric powder with metal oxide; a step of forming a thermoelectric material by press-molding the thermoelectric powder coated with the metal oxide; a step of sintering the thermoelectric material; and a step of heat-treating the thermoelectric material. COPYRIGHT KIPO 2017 (a) Generate thermoelectric powder (b) Coating the metal oxide (b-1) Inject the metal source precursor (b-2) Purge the metal source precursor (b-3) Inject the oxygen source precursor (b-4) Purge the oxygen source precursor (c) Press the thermoelectric material (d) Sintering (e) Heat treatment ...

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08-07-2016 дата публикации

Method of fabricating cathode for thin film battery using laser, cathode fabricated thereby, and thin film battery including the same

Номер: KR0101637938B1
Принадлежит: 한국과학기술연구원

... 박막 전지용 양극 형성 방법은, 기판 상에 양극 활물질을 증착하는 단계; 및 상기 양극 활물질 상에 레이저를 조사하여 상기 양극 활물질을 결정화하는 단계;를 포함할 수 있다. 양극 활물질은 상온에서 기판 상에 증착될 수 있고, 레이저를 이용하여 저온에서 양극 활물질을 결정화함으로써 가볍고 가공이 용이한 고분자 기판을 사용할 수 있게 된다. 본 발명의 일 실시예에 따른 양극 제조 방법으로 제조된 양극을 포함하는 박막 전지는 높은 방전 용량 등 우수한 충·방전 특성을 갖는다.

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21-09-2016 дата публикации

ATOMIC LAYER DEPOSITION METHOD USING COMPETITIVE ADSORPTION OF PRECURSOR

Номер: KR1020160109589A
Принадлежит:

An atomic layer deposition method using the competitive adsorption of a precursor according to an embodiment of the present invention may include (a) a step of injecting a first precursor onto a substrate, (b) a step of injecting oxygen (a raw material) onto the substrate, (c) a step of injecting the first precursor and the second precursor onto the substrate, and (d) a step of injecting oxygen (a raw material) onto the substrate. So, fine doping concentration can be controlled in forming a dielectric thin film. COPYRIGHT KIPO 2016 (AA) Start (BB) End (CC) Second element doping cycle (S100) Step of injecting a first precursor onto a substrate (S200) Step of injecting oxygen (raw material) onto the substrate (S300) Step of injecting the first precursor and the second precursor onto the substrate (S400) Step of injecting oxygen (raw material) onto the substrate ...

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20-12-2017 дата публикации

SILVER-SUBSTITUTED STRONTIUM NIOBATE DIELECTRIC COMPOSITION AND PRODUCTION METHOD THEREOF

Номер: KR1020170140137A
Принадлежит:

According to an embodiment of the present invention, the present invention relates to a silver-substituted strontium niobate dielectric composition which is represented by a general formula, KSr_[2(1-x)]Ag_(2x)Nb_3O_10, wherein x is greater than 0 and is less than or equal to 1. The present invention further relates to a production method thereof. In other embodiments of the present invention, K can be substituted by H. According to the present invention, it is possible to prevent deterioration occurring among substrates and dielectric substances. COPYRIGHT KIPO 2018 ...

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11-02-2019 дата публикации

고효율 열전 소재의 제조 방법 및 열전 모듈의 제조방법

Номер: KR0101945765B1
Принадлежит: 한국과학기술연구원

... 개시된 열전 소재의 제조 방법은, 층상 구조를 갖는 열전 물질의 파우더로부터 1차 성형체를 형성하는 단계, 상기 1차 성형체를 압출하여 압출체를 형성하는 단계, 상기 압출체를, 압출 방향에 수직한 단면에 따라 절단하여 복수의 절편을 형성하는 단계 및 상기 절편들을, 상기 압출 방향에 수직한 방향으로 적층하고, 상기 압출 방향에 수직한 방향으로 가압하여 2차 성형체를 형성하는 단계를 포함한다. 이에 따르면, 열전 소재의 열전 성능 및 열전 모듈의 제조 효율을 향상시킬 수 있다.

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29-08-2016 дата публикации

ATOMIC LAYER DEPOSITION METHOD OF PLATINUM GROUP METAL THIN FILM

Номер: KR101651512B1

Disclosed is an atomic layer deposition method of a platinum group metal thin film. The atomic layer deposition method of a platinum group metal thin film comprises: a step of preprocessing H_2S or NH_3 on a substrate; and a step of forming a platinum group metal thin film on the substrate. As such, the present invention enables a continuous deposition of the thin film by controlling a size and distribution of platinum group nanoparticles. COPYRIGHT KIPO 2016 (AA) Start (BB) End (S100) Step of preprocessing H_2S or NH_3 on a substrate (S200) Step of forming a platinum group metal thin film on the substrate ...

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10-05-2017 дата публикации

유기산 에스터의 제조방법

Номер: KR0101733387B1
Принадлежит: 대화제약 주식회사

... 발명은 유기산 에스터 화합물의 제조방법에 관한 것이다. 상기 유기산 에스터 화합물의 제조방법은, 하기의 (a)성분 내지 (d)성분의 혼합물을 제조하는 단계; 및 에스터화 반응을 통해 상기 혼합물로부터 4-하이드록시벤질 알코올-유기산 에스터(ester)를 제조하는 단계; 를 포함한다: (a)성분: 4-하이드록시벤질 알코올(4-hydroxybenzyl alcohol); (b)성분: 카복실기(carboxyl group)를 함유하는 유기산; (C)성분: 부틸 아세테이트(butyl acetate); (d)성분: 산 촉매.

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27-12-2018 дата публикации

반도체 메모리 소자의 커패시터 및 그 제조 방법

Номер: KR0101932588B1
Принадлежит: 한국과학기술연구원

... 개시된 반도체 메모리 소자의 커패시터는, 하부 전극, 상기 하부 전극 위에 배치되며 티타늄 산화물을 포함하는 유전막 및 상기 유전막 위에 배치되는 상부 전극을 포함한다. 상기 하부 전극은, 제1 금속 및 제2 금속을 포함하고, 상기 제1 금속은 백금(Pt), 오스뮴(Os), 로듐(Rh) 및 팔라듐(Pd)으로 이루어진 그룹에서 선택된 적어도 하나를 포함하고, 상기 제2 금속은, 루테늄(Ru) 및 이리듐(Ir)으로 이루어진 그룹에서 선택된 적어도 하나를 포함한다.

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10-01-2018 дата публикации

GAS SENSOR HIGHLY SENSITIVE TO HIGH HUMIDITY ENVIRONMENT BASED ON CARBON NANO-MATERIAL

Номер: KR101817334B1

The present invention relates to a gas sensor highly sensitive to a high humidity environment based on a carbon nano-material and, more specifically, relates to a gas sensor, forming a function group on a surface of a first sensing part made of a carbon nano-material to be combined with a water molecule to generate hydronium ions (H_3O^+), thereby enhancing sensitivity and sensing limit as an additional ion conduction path to acquire an additional reaction path is acquired in a high humidity environment. According to one embodiment of the present invention, the gas sensor comprises: a substrate; the first sensing part arranged in an upper part of the substrate; an electrode electrically connected to the first sensing part; and a second sensing unit disposed in an upper part of the first sensing part, wherein the second sensing part has a hydrophilic function groove. COPYRIGHT KIPO 2018 ...

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30-03-2017 дата публикации

METHOD OF MANUFACTURING ORGANIC ACID ESTER

Номер: KR1020170035147A
Принадлежит:

The present invention relates to a method of manufacturing an organic acid ester compound. The method of manufacturing an organic acid ester compound includes: a step of manufacturing the following compounds of (a) to (d); and a step of manufacturing 4-hydroxybenzyl alcohol-organic acid ester from the compounds through a reaction of esterification: a component (a) of 4-hydroxybenzyl alcohol, a component (b) of an organic acid including a carboxylic group, a component (c) of butyl acetate, and a component (d) of an acid catalyst. Thus, the present invention is able to manufacture 4-hydroxybenzyl alcohol-organic acid ester at high transference number. COPYRIGHT KIPO 2017 ...

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26-10-2017 дата публикации

CAPACITOR FOR SEMICONDUCTOR MEMORY ELEMENT AND MANUFACTURING METHOD THEREOF

Номер: KR1020170119119A
Принадлежит:

The present invention relates to a capacitor for semiconductor memory element and a manufacturing method thereof. The capacitor for semiconductor memory element comprises: a lower electrode; a dielectric layer formed on the lower electrode; and an upper electrode formed on the dielectric layer, wherein the dielectric layer includes a titanium oxide having a rutile structure. COPYRIGHT KIPO 2017 ...

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23-02-2018 дата публикации

냉간변형을 이용한 열전소재 제조장치 및 방법

Номер: KR0101831150B1
Принадлежит: 한국과학기술연구원

... 본 발명은 열전물성의 재현성을 향상시킴과 함께 열전소재의 캐리어 농도를 선택적으로 제어할 수 있는 냉간변형을 이용한 열전소재 제조장치 및 방법에 관한 것으로서, 본 발명에 따른 냉간변형을 이용한 냉간변형을 이용한 열전소재 제조방법은 열전물질을 용융, 냉각하여 열전재료 덩어리를 제조하는 단계; 열전재료 덩어리에 압력을 가하는 냉간변형을 실시하여, 열전재료 덩어리 내부의 캐리어 농도를 증가시키는 단계; 및 냉간변형이 실시된 열전재료를 열간압출하여 열전소재를 제조하는 단계;를 포함하여 이루어지는 것을 특징으로 한다.

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12-08-2015 дата публикации

ANODE THIN FILM OF LITHIUM ION SECONDARY BATTERY

Номер: KR1020150091830A
Принадлежит:

The present invention relates to an anode thin film of a lithium ion secondary battery with improved lifecycle and capacity properties of an anode thin film. The anode thin film of a lithium ion secondary battery according to the present invention includes a mixed layer of silicon and aluminum formed on a surface of a substrate. The mixed layer may be a layer produced by mixing silicon and aluminum in an amorphous type. COPYRIGHT KIPO 2015 ...

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08-11-2012 дата публикации

METHOD FOR MANUFACTURING THIN-FILM PZT GLIDE HEAD FOR HARD DISK

Номер: WO2012150766A3
Принадлежит:

The present invention relates to a method for manufacturing a thin-film PZT glide head for a hard disk, and more specifically, the invention enables: a glide head for detecting surface defects on hard disk drive media to be manufactured as a thin-film PZT such that a slider can be miniaturized compared with existing bulk-type sliders with various sizes being available from femto to pico size; an existing bulk-type piezoelectric element to be replaced with a thin-film piezoelectric element using a semiconductor step such that a low flying height and low sensitivity are obtained and the significance of weight or volume can be minimized; a thin-film PZT sensor formed on the upper part and an air bearing surface (ABS) formed on the lower part of said thin-film PZT sensor to be manufactured in an integrated manner such that a micro design can be accomplished compared to existing separation-type designs, thereby obtaining an advantageous technological position since the invention is favorable ...

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06-10-2016 дата публикации

THERMOELECTRIC MODULE AND MANUFACTURING METHOD THEREOF

Номер: KR1020160115240A
Принадлежит:

The present invention relates to a thermoelectric module and a manufacturing method thereof capable of simplifying resistance matching and improving thermoelectric matching by minimizing a resistance difference between the sintering thermoelectric element and the monocrystal thermoelectric element when the thermoelectric module is constructed by combining the sintering thermoelectric element and the monocrystal thermoelectric element. According to the present invention, the thermoelectric module comprises: a plurality of thermoelectric cells formed by a P-type thermoelectric element and an N-type thermoelectric element. The one among the P-type thermoelectric element and the N-type thermoelectric element includes the sintering thermoelectric element. The one among the P-type thermoelectric element and the N-type thermoelectric element comprises: a sintering thermoelectric element; a diffusion prevention layer to prevent the solid phase diffusion of a material included in both ends of the ...

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17-07-2017 дата публикации

이종 나노 입자를 이용한 열전 물질 제조 방법

Номер: KR0101758146B1
Принадлежит: 한국과학기술연구원

... 본 발명의 실시예는 혼합 분말이 되도록, 다결정의 모재료와 이종 나노 물질을 용기에 넣고 분쇄하는 단계 및 혼합 분말을 소결시키는 단계를 포함하는 이종 나노 입자를 이용한 열전 물질 제조 방법에 관련된다.

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10-07-2017 дата публикации

OXIDE THIN FILM GAS SENSOR AND GAS SENSING METHOD USING SAME

Номер: KR101755269B1

A gas sensing device includes: a sensor unit configured to output sensor data in response to the input gas; a storage unit for storing a database including a first vector which is sensor data output from the sensor unit for at least one single gas; and a detection unit configured to detect object gas by generating an expansion database including a second vector corresponding to at least one mixed gas based on the database and comparing the sensor data of the object gas of the sensor unit with the expansion database. According to the gas sensing device, the single gas and mixed gas are all detectable and classifiable using only the database for the single gas. Thus, the present invention is able to secure a fast response time by reducing an activation time of an oxide thin film and optimizing a time difference between the light irradiation and measurement for heating. COPYRIGHT KIPO 2017 (AA) Resistance (ohms) (BB) Time (sec) ...

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16-05-2016 дата публикации

PRODUCING METHOD OF POSITIVE ELECTRODE FOR THIN FILM BATTERY USING LASER, POSITIVE ELECTRODE FOR THIN FILM BATTERY PRODUCED BY METHOD, AND THIN FILM BATTERY COMPRISING SAME

Номер: KR1020160054255A
Принадлежит:

The present invention relates to a producing method of a positive electrode for a thin film battery using a laser, a positive electrode for a thin film battery produced by the method, and a thin film battery comprising the same. The forming method of a positive electrode for a thin film battery comprises the steps of: depositing a positive electrode active material on a substrate; and crystallizing the positive electrode active material by irradiating laser on the positive electrode active material. The positive electrode active material can be deposited on the substrate at the room temperature, and can use a light and easily processable polymer substrate by crystallizing the positive electrode active material at the low temperature using a laser. The thin film battery comprising the positive electrode produced by the producing method of the positive electrode according to one embodiment of the present invention has excellent charging and discharging properties such as high discharging ...

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09-08-2017 дата публикации

혼합가스 분류 및 검지가 가능한 가스 센싱 장치 및 방법

Номер: KR0101766376B1
Принадлежит: 한국과학기술연구원

... 가스 센싱 장치는, 입력된 가스에 반응하여 센서 데이터를 출력하도록 구성된 센서부; 하나 이상의 단일가스에 대해 상기 센서부에서 출력된 센서 데이터인 제1 벡터를 포함하는 데이터베이스가 저장된 저장부; 및 상기 데이터베이스에 기초하여, 하나 이상의 혼합가스에 대응되는 제2 벡터를 포함하는 확장 데이터베이스를 생성하고, 상기 센서부의 대상 가스에 대한 센서 데이터를 상기 확장 데이터베이스와 비교함으로써 상기 대상 가스를 검지하도록 구성된 검지부를 포함한다. 상기 가스 센싱 장치에 의하면, 단일가스에 대한 데이터베이스만으로 단일가스와 혼합가스를 모두 인지하고 분류할 수 있다.

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05-09-2018 дата публикации

CAPACITOR OF SEMICONDUCTOR MEMORY ELEMENT AND MANUFACTURING METHOD THEREOF

Номер: KR1020180099197A
Принадлежит:

Disclosed is a capacitor of a semiconductor memory element, capable of reducing a leakage current. The capacitor comprises a lower electrode; a dielectric membrane disposed on the lower electrode and including a titanium oxide; and an upper electrode disposed on the dielectric membrane. The lower electrode includes first and second metal. The first metal includes at least one selected from a group consisting of platinum (Pt), osmium (Os), rhodium (Rh), and palladium (Pd). The second metal includes at least one selected from a group consisting of ruthenium (Ru) and iridium (Ir). COPYRIGHT KIPO 2018 ...

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28-10-2016 дата публикации

열전모듈 및 그 제조방법

Номер: KR0101670229B1
Принадлежит: 한국과학기술연구원

... 본 발명은 소결 열전소재와 단결정 열전소재를 조합하여 열전모듈을 구성함에 있어서 소결 열전소재와 단결정 열전소재의 저항 차이를 최소화하여 저항 매칭을 간소화함과 함께 열전 성능을 향상시킬 수 있는 열전모듈 및 그 제조방법에 관한 것으로서, 본 발명에 따른 열전모듈은 p형 열전소재와 n형 열전소재로 이루어지는 열전 셀을 복수개 포함하며, 상기 p형 열전소재와 n형 열전소재 중 어느 하나는 소결 열전소재를 포함하여 구성되며, 상기 p형 열전소재와 n형 열전소재 중 어느 하나는, 소결 열전소재와, 상기 소결 열전소재의 양단 상에 구비되어 물질의 고상확산을 방지하는 확산방지층과, 상기 소결 열전소재 양단의 확산방지층 중 적어도 어느 하나 이상의 확산방지층 상에 구비되는 금속블록층을 포함하여 구성되며, 상기 금속블록층은 상기 소결 열전소재보다 상대적으로 전기저항값이 낮은 것을 특징으로 한다.

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08-04-2016 дата публикации

DEVICE FOR GENERATING HYBRID ENERGY

Номер: KR0101610738B1
Принадлежит: 한국과학기술연구원

... 본 발명은 이종(異種)의 에너지 발생 수단들을 결합하여 하이브리드 에너지를 생성하는 에너지 발생 장치에 관한 것이다. 본 발명에 따른 하이브리드 에너지 발생 장치는, 압전 물질을 포함하는 적어도 하나의 압전부를 구비한 제 1 층 및 정전 물질을 포함하는 적어도 하나의 정전부를 구비한 제 2 층을 포함하고, 제 1 층에 가해지는 외력에 의한 압력에 따라 압전부는 압전 에너지를 생성하고, 외력에 의한 제 1 층과 제 2 층의 접촉 및 분리에 따라 정전부는 정전 에너지를 생성하는 하이브리드 에너지 발생 장치.

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21-12-2018 дата публикации

PASTE FOR FORMING OHMIC CONTACT OF P-TYPE SEMICONDUCTOR AND METHOD FOR FORMING OHMIC CONTACT OF P-TYPE SEMICONDUCTOR USING SAME

Номер: KR1020180135635A
Принадлежит:

The present invention relates to a paste for forming ohmic contact of a p-type semiconductor. The paste applicable to various flexible substrates includes metal oxide and a binder. The metal oxide is rhenium oxide or molybdenum oxide. COPYRIGHT KIPO 2019 ...

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01-06-2017 дата публикации

GAS SENSING APPARATUS AND METHOD CAPABLE OF CLASSIFICATION AND DETECTION OF MIXED GAS

Номер: KR1020170060321A
Принадлежит:

A gas sensing device comprises: a sensor unit configured to output sensor data in response to input gas; a storage unit in which database including a first vector, which is the sensor data output by the sensor unit, is stored; and a detection unit generating expansion database including a second vector corresponding to at least one mixed gas, based on the database, and comparing the expansion database with the sensor data of the target gas of the sensor unit to detect the target gas. According to the gas sensing device, both a single gas and a mixed gas can be recognized and classified by using only a single gas database. COPYRIGHT KIPO 2017 ...

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08-11-2012 дата публикации

METHOD FOR MANUFACTURING THIN-FILM PZT GLIDE HEAD FOR HARD DISK

Номер: WO2012150766A2
Принадлежит:

The present invention relates to a method for manufacturing a thin-film PZT glide head for a hard disk, and more specifically, the invention enables: a glide head for detecting surface defects on hard disk drive media to be manufactured as a thin-film PZT such that a slider can be miniaturized compared with existing bulk-type sliders with various sizes being available from femto to pico size; an existing bulk-type piezoelectric element to be replaced with a thin-film piezoelectric element using a semiconductor step such that a low flying height and low sensitivity are obtained and the significance of weight or volume can be minimized; a thin-film PZT sensor formed on the upper part and an air bearing surface (ABS) formed on the lower part of said thin-film PZT sensor to be manufactured in an integrated manner such that a micro design can be accomplished compared to existing separation-type designs, thereby obtaining an advantageous technological position since the invention is favorable ...

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28-09-2016 дата публикации

METAL OXIDE THIN FILM HAVING MASSIVE CRYSTAL GRAIN AND MANUFACTURING METHOD THEREOF

Номер: KR1020160112348A
Принадлежит:

According to an embodiment of the present invention, a method for manufacturing a metal oxide thin film having a massive crystal grain includes the steps of: forming an amorphous seed layer on a substrate; and forming a metal oxide layer, on the amorphous seed layer, having a crystal grain of which a size corresponds to the thickness of the amorphous seed layer. COPYRIGHT KIPO 2016 ...

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12-05-2016 дата публикации

METHOD FOR MANUFACTURING CATHODE FOR THIN FILM BATTERY USING LASER, CATHODE FOR THIN FILM BATTERY MANUFACTURED THEREBY, AND THIN FILM BATTERY COMPRISING SAME

Номер: WO2016072664A1
Принадлежит:

A method for forming a cathode for a thin film battery may comprise the steps of: depositing a cathode active material on a substrate; and crystallizing the cathode active material by irradiating a laser on the cathode active material. The cathode active material can be deposited on a substrate at room temperature, and can be crystallized by a laser at low temperatures so that a light and workable polymeric substrate may be used. A thin film battery comprising a cathode manufactured by a method for manufacturing a cathode according to one embodiment of the present invention may have good charging and discharging properties such as high discharge capacity.

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30-11-2015 дата публикации

NIOBATE DIELECTRIC COMPOSITION AND NANOSHEET THIN FILM USING SAME

Номер: KR101572614B1

The present invention provides a niobate dielectric composition, which has high dielectric constant and low dielectric loss and is represented by chemical formula 1. Also, the present invention provides a nanosheet thin film using the same. In the chemical formula 1, x is greater than zero and less than or equal to 0.7. COPYRIGHT KIPO 2016 ...

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31-10-2019 дата публикации

DIELECTRIC FILM, SEMICONDUCTOR MEMORY DEVICE HAVING SAME, AND FORMING METHODS THEREOF

Номер: WO2019208903A1
Принадлежит:

The present invention provides a dielectric film made of a compound having the chemical formula of BexM1-xO and having a rock salt structure as a stable phase at room temperature, wherein M is any one of the alkaline earth metals, and x is greater than 0 and less than 0.5.

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04-10-2018 дата публикации

SEMICONDUCTOR MEMORY ELEMENT HAVING COMPOUND OF PLATINUM GROUP OXIDE AND TIN OXIDE AND MANUFACTURING METHOD THEREOF

Номер: KR101892632B1

The present invention relates to a semiconductor memory element having a compound of a platinum group oxide and a tin oxide, and a manufacturing method thereof. The semiconductor memory element according to embodiments of the present invention comprises: a lower electrode; a dielectric layer formed on the lower electrode; and an upper electrode formed on the dielectric layer, wherein the lower electrode or the upper electrode includes a compound of a platinum group oxide and a tin oxide. COPYRIGHT KIPO 2018 ...

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11-04-2018 дата публикации

METHOD FOR MEASURING THERMAL CONDUCTIVITY AND THERMAL CONDUCTIVITY INDEX OF THERMOELECTRIC SEMICONDUCTORS

Номер: KR101848012B1

The present invention relates to a method for measuring thermal conductivity and a thermal conductivity index of thermoelectric semiconductors. More particularly, an objective of the present invention is to provide a method for correcting an error due to a heat loss and heat generated by a material itself in a conductor occurring in a conventional Haman′s method. The method for correcting an error can be easily applied to more accurately evaluate performance and physical properties of thermoelectric semiconductors at various temperatures, and accurate evaluation of the properties of thermoelectric semiconductors can be useful for designing thermoelectric elements. COPYRIGHT KIPO 2018 (AA) Run at least 4 times with different samples using an existing Haman method (BB) Measure the retroreflection coefficient of a sample separately from the Haman method measurement (CC) Calculate the temperature difference across the sample using the DC voltage measured by the Haman method. (DD) Z value calculation ...

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22-05-2017 дата публикации

APPARATUS AND METHOD FOR MANUFACTURING THERMOELECTRIC MATERIAL USING COLD DEFORMATION

Номер: KR1020170055860A
Принадлежит:

The present invention relates to an apparatus and method for manufacturing a thermoelectric material using cold deformation to improve the reproducibility of thermoelectric properties and selectively control the carrier concentration of the thermoelectric material. The method of manufacturing a thermoelectric material using cold deformation according to the present invention comprises: a step of preparing a thermoelectric material mass by melting and cooling a thermoelectric material; a step of performing cold deformation for applying a pressure to the thermoelectric material mass and increasing the carrier concentration in the thermoelectric material mass; and a step of hot-extrusion the thermoelectric material subjected to the cold deformation and manufacturing a thermoelectric material. COPYRIGHT KIPO 2017 (S101) Melting and cooling a thermoelectric material to prepare a thermoelectric material mass (S102) Changing the carrier concentration of the thermoelectric material mass by performing ...

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21-02-2018 дата публикации

PHOTOSENSITIZER-ANTIBODY CONJUGATE FOR DIAGNOSING AND TREATING CANCER

Номер: KR1020180017883A
Принадлежит:

Provided is a conjugate for diagnosing and treating cancer, capable of improving effectiveness in diagnosis or treatment of cancer. To this end, the conjugate is composed of: a photosensitizer containing a tetrapyrrole-based compound or a derivative thereof; at least one biocompatible polymer coupled with the photosensitizer; a coupler coupled to the biocompatible polymer; and a surface-specific antibody coupled to the coupler. COPYRIGHT KIPO 2018 ...

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06-11-2015 дата публикации

CALCIUM-COPPER-TITANIUM OXIDE-BASED DIELECTRIC THIN FILM AND MANUFACTURING METHOD THEREOF

Номер: KR1020150124901A
Принадлежит:

The present invention relates to a calcium-copper-titanium oxide-based dielectric thin-film having a high dielectric constant and low dielectric loss properties and a manufacturing method thereof. According to the present invention, the dielectric thin-film is prepared by mixing a dielectric thin-film with CaxCuyTizO_12 (0 Подробнее

20-12-2016 дата публикации

CURVED PIEZOELECTRIC DEVICE

Номер: KR1020160145348A
Принадлежит:

The present invention relates to a curved piezoelectric device. The device comprises: a curved substrate; and a piezoelectric material installed on one surface or both surfaces of the curved substrate. Therefore, the device can maximize electrical potential of the piezoelectric material. COPYRIGHT KIPO 2016 (CC) Piezoelectric material (BB) Curved substrate (AA) Electrode ...

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07-03-2017 дата публикации

주석질산화물 단결정박막 및 그 제조방법

Номер: KR0101712349B1
Принадлежит: 한국과학기술연구원

... 본 발명은 음이온의 화학양론 제어를 통해 투명성 및 높은 전기전도도 특성을 갖는 단결정 구조의 주석질산화물 박막 및 그 제조방법에 관한 것으로서, 본 발명에 따른 주석질산화물 단결정박막의 제조방법은 스퍼터링 공정을 통해 기판 상에 SnOzN1-z(0.35 Подробнее