이차원 이황화주석 박막의 형성 방법

Hereinafter, a preferred embodiment of the present invention based on the attached drawing through form, the present invention according to method of forming thin tin disulfide is described the on-sensors other.

Prior description, various embodiment in one form, the same identical code type component is described above using a representative embodiment form, other embodiment in one form only for the compressor and other components to explain less than 1000.

Figure 1 shows a schematic diagram of the method of the present invention also thin tin disulfide forming one in the embodiment according to the order described. The reference also 1, tin oxide thin film forming substrate (S1) (S2) and the formed tin oxide thin film processing sulfide, tin disulfide can be formed.

In the embodiment according to Figure 2 shows a method of the present invention thin tin disulfide forming one of coarse general outline also are disclosed. As a also 2, substrate (10) deposited tin oxide (20) H2S gas to the heat treatment embodiment, tin oxide (20) is less tin (30) to air from outside. At this time, won tin oxide material (20) according to the thickness of, two-dimensional processed tin sulfide (30) and number nanofiltration in metric units in a plurality of layers, uniform tin sulfide (30) can be thin film.

Specifically, tin oxide (20) the step of forming the thin film SiO₂ Al substrate₂ O₃ Tin sulfide on a substrate surface (30) atomic layer deposition (ALD) thin film can be performed. The atomic layer deposition method can be implemented through known ALD equipment.

One embodiment of the present invention in one form, substrate (10) an oxide aluminum (Al₂ O₃ ), Titanium dioxide (TiO₂ ), Zirconium oxide (ZrO₂ ), oxide (HfO₂ ) Comprising an oxide of one or more can be selected.

In addition, one embodiment of the present invention in one form, tin oxide (20) is tin monoxide (SnO), tin dioxide (SnO₂ ), Trioxide tin (Sn₂ O₃ ) Can be selected from one or more of, the necessarily limited endured.

In addition, one embodiment of the present invention in one form, substrate (10) on tin oxide (20) (S1) is to form a thin film, substrate (10) injecting raw material on tin, tin reaction raw material, introducing the oxygen raw material, oxygen can be performed after raw material.

On the other hand, one embodiment of the present invention in one form, this ammonium tin tin material (SnCl₂ ), Tin tetrachloride (SnCl₄ ), Tin (tin Tetrakis (Dimethylamino)) - tetrakis dimethylamino, diethylamino tin tetrakis - (tin (diethylamido) Tetrakis), tetrakis - (tin Tetrakis (ethylmethylamino)) ethyl methylamino tin, tin (Bis [bis (trimethylsilyl) amino] tin) bis - bis - trimethylsilyl - amino, tetramethyl tin (Tetramethyltin), such as tetraethyl orthosilicate (Tetraethyltin) tin, trimethyl - phenyl tin (tin (phenyl) Trimethyl), tin (II)- 2 - methyl - 2 - propoxy - dimethyl american roh (Dimethylamino-a 2 a-methyl-a 2 non-propoxy-a tin (II)), tin (Sn (acac) 2) acetyl acetone can be selected from any one.

In addition, one embodiment of the present invention in one form, oxygen raw material water, oxygen gas, air, a gas mixture of nitrogen and oxygen, methanol, ethanol, isopropanol, ozone, hydrogen peroxide, can be selected from any one or more of oxygen plasma.

One embodiment of the present invention in one form, tin oxide (20) forming a thin film (S1) is carried out in excellent deposition temperature to 300 °C but, not limited to the present invention are not necessarily.

In addition, one embodiment of the present invention in one form, substrate (10) is SiO₂ Or Al₂ O₃ May be, e.g., Al₂ O₃ The substrate is SiO ALD method₂ Al on₂ O₃ Can be in the form of a thin film formation.

One embodiment of the present invention in one form, Al₂ O₃ Thin film is SiO using ALD method₂ 4 Nm in thickness deposited over substrate temperature 350 °C form a thin film, the substrate of the present invention (10) formation temperature and thickness are not necessarily limited.

One embodiment of the present invention in one form, SiO₂ Al with thin films₂ O₃ Surface energy of the metal selected thin film's oldest. Specifically, SiO₂ Thin film is smaller than a surface energy of thin tin disulfide, Al₂ O₃ Thin film surface energy thin tin sulfide force difference between a depth stop interface to compare the changes in shape and surface apart from the tin disulfide according to a surface energy of micrographs.

In addition, one embodiment of the present invention in one form, tin sulfide (30) in thin film forming method, H₂ S gas tin oxide (20) includes a substrate on sulfide processing, rapid thermal processing equipment (RTA) radiates heat so that they travel within, not limited to the present invention are not necessarily.

One embodiment of the present invention in one form, H₂ S gas tin oxide (20) includes a substrate on processing sulfide H₂ S (3. 5%) And of a gas mixture of 5 minutes at a pressure of 300 °C to 400 °C 100 mtorr Ar can be carried out.

3A and 3b also includes using atomic layer deposition method according to voltages also tin oxide (20) thin film thickness variations and H₂ S processing sulfide gas generated through tin sulfide (30) thin film thickness variations show a graph are disclosed.

Also as shown in 3a and 3b also, axis and the horizontal axis tin oxide atomic layer deposition method nitric oxide thickness of tin and tin dioxide cycle be deposited on H (also 3a)₂ S gas tin oxide thin film on a tin sulfide sulfur and to form exhibits a variation in the thickness (3b also).

When the thin film is formed by atomic layer deposition method tin and tin dioxide and nitric oxide, as it became the city 2a also, atomic layer deposition method according to proportional increase in the cycle of a thin thickness can be know. In addition, as shown in also 3b, H₂ When processing thin tin and tin dioxide gas monoxide S sulfur, tin and monoxide thin tin dioxide increases the thickness of the upper portion and in addition a tin oxide thin film thickness observed, this tin oxide thickness of thin film electrochemical tin thickness number in such a way a return electrode to each other.

Figure 4 of the present invention one embodiment form disulfide tin surfaces formed along part of the disclosed.

Specifically, Figure 4 SiO₂ Substrate (4a and 4b also also) and Al₂ O₃ Nitric oxide (SnO) deposited on substrate (also also 4c to 4e) tin thin film, each sulfide processing 300 °C, 400 °C, detects the part of the tin surfaces disulfide coating formed on a surface of the polysilicon film 450 °C 2000. On the other hand, one embodiment of the present invention in one form for securing the thickness of 15 nm was thin tin monoxide.

Also as shown in 4a, SiO₂ Nitric oxide tin thin film is deposited on a substrate 300 °C when processing sulfide in progress, continuous non-rough surface thin film sources capable of very uniform thin film. To the W-CDMA, also as shown in 4b, when progress processing sulfide in 400 °C, without generating a continuous thin film surface roughened number exists in the non-uniform thin film sources capable of.

Since, relatively SiO₂ Tin is less than that of the substrate due to high surface energy to total energy lowers the direction thin film is thus created, inside the island rather than continuous form thin film is thus created (island) are disclosed.

However, as shown in also 4c and 4d also, Al₂ O₃ Nitric oxide deposited on a substrate by using a thin tin each 300 °C to 400 °C sulfide in processing if, thin film surface non-rough sources capable of continuous and uniform thin film.

Since, relatively Al₂ O₃ Low surface energy than the surface of the substrate's oldest tin disulfide. However, as shown in 4e also, a thin film is the roughened portion detects and detect an sulfide in 450 °C, has been damaged by a door number occurs point can be ascertained. Thus, according to the temperature of the processing sulfide 300 °C to 400 °C range preferably.

Figure 5 of the present invention according to one embodiment form SiO₂ Deposited on the substrate by using a thin film 300 °C to 400 °C sulfide in processing when nitric oxide tin, tin sulfide synthesis (also 5a) Sn, S (also 5b) and O (also 5c) is shown graph of chemical bonding are disclosed.

Specifically, as shown in 5a to 5c also also, SiO₂ Nitric oxide deposited on a substrate 300 °C tin, 350 °C and 400 °C sulfide in processing performed to progress, X ray photoelectron spectroscopy (x-a ray photoelectron spectroscopy) analysis of the spectra of one chemical coupling S Sn (also 5a) and (5b also) occurring in various compound bonding to the inorganic material constituting the can confirm it. Through, SiO₂ Nitric oxide formed on the substrate after processing one sulfuration tin tin tin disulfide is less single film generated in a form not mixed disulfide annotations can be beat.

In addition, the referencing also 5a, at an elevated temperature results in the least processing sulfide 400 °C or more mixed different Sn produced can be known. I.e., ones of the thin films mainly Sn in addition high surface energy rather than an island form growth since, SiO having relatively low surface energy₂ On a substrate at one end and highly uniform continuous thin tin sulfide growing difficulties can be known.

In addition, the referencing also 5c, SiO₂ Nitric oxide deposited on a substrate in a graph representing the combination of tin sulfide progress processing performed to O, O and Sn of thin tin monoxide through a peak observed look after perfect tin sulfide sulfur can be know growth is circulated has not been altered.

In addition, the referencing also 5c, SiO₂ In nitric oxide deposited on a substrate 400 °C H tin₂ S O representing the combination of gas sulfide processing performed to progress chart, a combination of Si and O of observed substrate. This, X ray photoelectron spectroscopy is generally a very thin only in regions near the band of a signal, the signal is observed that Si is not consecutive formed in substrate planarized thin film part denotes sickness substrate. The surface profile of the aforementioned agent of 4b and observing the facts supporting the operating requirements can be designs that result.

Figure 6 of the present invention according to another embodiment form, Al₂ O₃ Nitric oxide thin film deposited on the substrate 300 °C to 400 °C tin Sn (also 6a) synthesized in at the time of which it will do progress processing sulfide in tin disulfide, S (also 6b) and O (6c also) is shown graph of chemical bonding are disclosed.

Also as shown in 6a to 6c also, Al₂ O₃ Each tin nitric oxide deposited on a substrate 300 °C, 350 °C and 400 °C sulfide in processing performed to progress, synthesized thin film is a tin disulfide having the chemical components and binder can be sources.

Specifically, the temperatures in the sulfide (also 6a) regardless of intensity peaks on Sn S (also 6b) with tin disulfide binding energy value can be found.

In addition, Al₂ O₃ Nitric oxide deposited on a substrate 400 °C sulfide in progress processing performed to tin, representing the combination of O and O and of not observed in graph (also 6c) Al peak, peak of Sn and O is not observed also viewed, tin disulfide generated through a different processing sulfide thin film single phase can not confirmed.

Figure 7 shows a one embodiment of the present invention also formed along thin tin disulfide form represents a phase change and crystallization are disclosed. Specifically, the SiO also 7a₂ Each nitric oxide thin film deposited on the substrate 300 °C, 350 °C and 400 °C sulfide thin tin sulfide six treatment temperature XRD (X-a ray Diffraction) graph and phase change crystallization indicative of a degree, is also 7b Al₂ O₃ Each nitric oxide thin film is deposited on a substrate 300 °C, 350 °C and 400 °C sulfide thin tin sulfide six treatment temperature XRD graph of phase change crystallization indicative of a degree are disclosed.

The reference also 7a, SiO₂ Forming on a substrate a single chemical onto the upper thin tin sulfide, tin and one sulfuration disulfide tin crystal structure in the event that the two materials artificial pearl mixed phase observed substrate. However, the reference also 7b, Al₂ O₃ Thin tin sulfide is formed on a substrate processing temperature regardless of tin single phase sulfide has been confirmed that the disulfide formed.

The, H a thin tin monoxide₂ S gas processing sulfide thin tin sulfide at the time of forming thin tin sulfide with large substrate surface energy than the surface energy is small than above synthesised precursor can be added instead of glass substrate.

In addition, H₂ S on tin monoxide gas so that sulfur, processing temperature sulfide phase change without impacting the uses, XRD peak increases polarization along the processing temperature is sulfide, tin sulfide and the half bandwidth substances formed by crystallization diagram viewed sulfide has been confirmed that the processing temperature is increased.

Figure 8 shows a embodiment of the present invention also formed along another thin tin disulfide form represents a phase change and crystallization, chemical method and a system are disclosed graph exhibits altered binding surface shape. Specifically, Al 8a is also₂ O₃ Is deposited on a substrate tin dioxide (SnO₂ ) Thin film each 300 °C, 350 °C and 400 °C sulfide treatment temperature and represents a phase change thin tin sulfide six crystallinity are disclosed. In addition, Al 8b is also₂ O₃ Tin dioxide thin film is deposited on a substrate 400 °C sulfide in processing which gives rise to the part of the tin surfaces sulfide synthesis and, Al 8c is also₂ O₃ Grown on the substrate thin tin sulfide of chemical with O representing the combination graph are disclosed.

The reference also 8a, thin tin dioxide sulfiding the crystallinity is not synthesized through a thin tin sulfide is not observed can be confirmed with a peak of XRD graph substantially.

In addition, the referencing also 7b, at the point in which there is a plurality of intermediate portions of the kernel are viewed, sulfide may be viewable by an applied thin film during the treatment and, through, the metal sulfide at a temperature higher than 400 °C embodiment processing can be boosted. In addition, the vacuum heat treatment according to a high dependence of crystallized tin sulfide also can be difficult to know.

The 8c also reference, and in which there is a peak in 300 °C to 350 °C O Sn coupled element viewed, sulfide processing number not application time can be boosted. This thin tin dioxide and O of binding energy in Sn, Sn and O in binding energy of the element tin monoxide than strong the higher temperature sulphide can be removing process is required. However, the single layer embodiment 400 °C sulfide in processing one sulfuration not tin and tin disulfide, annotations can be that of a mixed thin film is generated.

The, tin oxide thin film processing when thin tin sulfide to form a sulfide, and O the packing insertion of thin tin dioxide rather than Sn, Sn and O to which the valve is more advantageously for bonding thin tin and sulfiding the weak nitric oxide can be know.

To products on the aforementioned description, the technical idea of the present invention is provided to the present invention without changing its essential characteristic of the blood or other specific embodiment form may be may be understand are disclosed.

Therefore, until now the aforementioned embodiment is exemplary in all forms, the present invention is not limited to said embodiment types for must understand and, description comprises the above-described range of the present invention carry rather than claim are represented by, in which the meaning of claim some general outline of the form of the present invention and items and equally to all changing or modified range should interpreted.