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Применить Всего найдено 7. Отображено 7.
28-11-2018 дата публикации

BLANK MASK, PHOTOMASK, AND MANUFACTURING METHOD THEREOF

Номер: KR1020180126810A
Автор: NAM, KEE SOO, SHIN, CHEOL, LEE, JONG HWA, YANG, CHUL KYU, SHIN, SEUNG HYUP, JEON, YOUNG JO, KONG, GIL WOO
Принадлежит:

The present invention relates to a blank mask which has a light shielding film and a hard film on a transparent substrate. The light shielding film is formed by using a silicon target which does not include transition metal, and more specifically, is formed as a multilayer film which includes a shielding film, a transmittance controlling layer, and a reflection preventing film, a reflectivity controlling layer. Thus, the light shielding film has optical density of 2.50 or more, reflectivity of 40% or less, and a thickness of 60 nm or less with respect to light with a wavelength of 193 nm. Therefore, the light shielding film has excellent chemical resistance to chemical washing and light exposure resistance to ArF exposure light. In particular, for photolithography for forming a high precision pattern by using exposure light with a wavelength of 193 nm, the photomask including the light shielding film can transfer an excellent high precision pattern. COPYRIGHT KIPO 2019 ...

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Номер записи: 1
21-03-2023 дата публикации

극자외선 리소그래피용 블랭크마스크 및 포토마스크

Номер: KR102511751B1
Автор: 신철, 이종화, 양철규, 공길우, 서경원
Принадлежит: 주식회사 에스앤에스텍

... 극자외선 리소그래피용 블랭크마스크는 투명 기판, 다층 반사막, 캡핑막, 및 흡수막을 구비하며, 다층반사막은 표면 거칠기(Surface Roughness)가 0.5㎚Ra 이하이다. EUV 포토마스크 패턴의 풋팅이 방지되고, 평탄도가 개선되며, 캡핑막의 반소도 감소 및 결함 발생이 방지된다.

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Номер записи: 2
02-07-2020 дата публикации

BLANK MASK AND PHOTOMASK

Номер: WO2020138855A1
Автор: SHIN, Cheol, LEE, Jong-Hwa, YANG, Chul-Kyu, CHOI, Min-Ki, SHIN, Seung-Hyup, KONG, Gil-Woo
Принадлежит:

A blank mask includes a light-shielding film and a hard film which are formed on a transparent substrate. The hard film is formed of a silicon compound containing at least one of oxygen, nitrogen, and carbon in silicon. Provided are a blank mask and a photomask which have an improved resolution and are improved in a critical dimension (CD) characteristic and a process window margin which are to be implemented. Accordingly, a blank mask and a photomask which have an excellent quality can be manufactured when patterns thereof are implemented to be 32nm or less, especially, 14nm or less.

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Номер записи: 3
28-11-2018 дата публикации

BLANK MASK FOR EXTREME ULTRAVIOLET AND PHOTOMASK USING SAME

Номер: KR1020180127197A
Автор: NAM KEE SOO, SHIN CHEOL, LEE JONG HWA, YANG CHUL KYU, SHIN SEUNG HYUP, KONG GIL WOO
Принадлежит:

The present invention provides an EUV blank mask capable of stably maintaining the characteristics of an absorbing film by preventing oxidation of the absorbing film by forming the absorbing film of multilayer film of two or more layers, using the uppermost layer of the absorbing film as an etching mask for a lower layer, and being formed with a silicon (Si) compound, and a photomask using the same. In addition, natural oxidation of the absorbing film, which occurs during wafer printing, can be prevented, and the defects caused by the deterioration of the characteristics of the absorbing film can be prevented. COPYRIGHT KIPO 2019 ...

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Номер записи: 4
28-11-2018 дата публикации

PHASE INVERSION BLANK MASK AND PHOTOMASK

Номер: KR1020180127190A
Автор: NAM KEE SOO, SHIN CHEOL, LEE JONG HWA, YANG CHUL KYU, KIM CHANG JUN, SHIN SEUNG HYUP, KONG GIL WOO
Принадлежит:

The present invention provides a high-transmittance phase inversion blank mask and a photomask which are made of a silicon (Si) or silicon (Si) compound on a transparent substrate and have a phase reversal film having high transmittance characteristics. The phase inversion blank mask according to the present invention is the phase inversion mask in which the phase inversion film has a high transmittance of 50% or more, and thus it is possible to realize a fine pattern of 32 nm or less, especially 14 nm or less, preferably 10 nm or less, on a semiconductor device, for example, a DRAM, a flash memory, or a logic device. COPYRIGHT KIPO 2019 ...

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Номер записи: 5
23-04-2018 дата публикации

PHASE SHIFT BLANK MASK AND PHOTOMASK

Номер: KR1020180041042A
Автор: NAM, KEE SOO, SHIN, CHEOL, LEE, JONG HWA, YANG, CHUL KYU, KIM, CHANG JUN, SHIN, SEUNG HYUP, KONG, GIL WOO
Принадлежит:

The present invention provides a high-transmittance phase shift blank mask and a photomask, wherein the phase shift blank mask is made of silicon (Si) or a silicon (Si) compound on a transparent substrate and has a phase shift film having a high transmittance characteristic. The phase shift blank mask according to the present invention can achieve a fine pattern with the size of 32 nm or less, particularly 14 nm or less, and preferably 10 nm or less by having a transmittance of 50% or higher. COPYRIGHT KIPO 2018 ...

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Номер записи: 6
28-11-2018 дата публикации

PHASE SHIFT BLANK MASK AND MANUFACTURING METHOD THEREOF

Номер: KR1020180127198A
Автор: NAM KEE SOO, SHIN CHEOL, LEE JONG HWA, YANG CHUL KYU, SHIN SEUNG HYUP, KONG GIL WOO
Принадлежит:

A phase shift blank mask according to the present invention is provided with a phase reversal film having a multilayer film structure of two or more layers on a transparent substrate, and the phase reversal film consists essentially of silicon (Si) alone, silicon (Si) compounds which do not contain a transition metal. By forming the phase reversal film according to the present invention from a silicon (Si) based material not containing a transition metal, it is possible to provide the blank mask and the photomask which are excellent in resistance to light for exposure light and chemical resistance due to chemical cleaning, the accuracy of pattern critical dimension can be controlled, and the use period of the photomask can be increased. COPYRIGHT KIPO 2019 ...

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Номер записи: 7