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Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Применить Всего найдено 26. Отображено 26.
30-11-2016 дата публикации

FUNCTIONAL BAKING DOUGH COMPOSITION USING SEAWEED FULVESCENS, FUNCTIONAL BREAD, AND METHOD FOR MANUFACTURING SAME

Номер: KR1020160137154A
Автор: KIM, TAE CHEOL, KIM, DEOK BAE, KIM, BOK HEE
Принадлежит:

The present invention relates to a functional baking dough composition using seaweed fulvescens, functional bread, and a method for manufacturing the same. The composition, bread, and method according to the present invention have a blood sugar level reduction efficacy, raise a blood insulin level, lower cholesterol, neutral lipid, and LDL contents, and thus are effective for preventing and mitigating diabetes, arteriosclerosis, and the like. COPYRIGHT KIPO 2016 (AA) mg glucose/dl (BB) General bread (CC) Seaweed fulvescens bread (DD) Zero week (EE) First week (FF) Second week (GG) Third week (HH) Fourth week (II) Fifth week ...

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Номер записи: 1
02-09-2010 дата публикации

POLYMER FOR COATING PHOTORESIST PATTERN, AND METHOD FOR FORMING PATTERN FOR SEMICONDUCTOR DEVICE USING SAME

Номер: KR2010098618A2
Автор: LEE, Jung-Youl, LEE, Jae-Woo, KIM, Deog-Bae, KIM, Jae-Hyun
Принадлежит:

Disclosed are a polymer for coating a photoresist pattern, which can improve the resolution of a lithography process, and a method for forming a pattern of a semiconductor device using the polymer. The polymer for coating a photoresist pattern can be expressed by the chemical formula of claim 1. In chemical formula 1, R* is independently a hydrogen atom or a methyl group (-CH3), R1 is a linear or cyclic hydrocarbon group with 3 to 6 carbon atoms and 1 to 2 nitrogen atoms, R2 is an alkoxy benzene group or an alkoxy carbonyl group with 5 to 20 carbon atoms, and x, y and z are each a mol % of each repeating unit based on the entirety of the polymer of said chemical formula, where x is 5 to 90 mol %, y is 5 to 60 mol %, and z is 5 to 30 mol %.

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Номер записи: 2
02-09-2010 дата публикации

POLYMER FOR COATING A PHOTORESIST PATTERN, AND METHOD FOR FORMING A PATTERN OF A SEMICONDUCTOR DEVICE USING SAME

Номер: KR2010098617A2
Автор: LEE, Jung-Youl, LEE, Jae-Woo, KIM, Deog-Bae, KIM, Jae-Hyun
Принадлежит:

Disclosed are a polymer for coating a photoresist pattern, which can improve the resolution of a lithography process, and a method for forming a pattern of a semiconductor device using the polymer. The polymer for coating a photoresist pattern is expressed in chemical formula 1 of claim 1. In chemical formula 1, R* is independently a hydrogen atom or a methyl group (-CH3), R1 is a linear or cyclic hydrocarbon group with 1 to 18 carbon atoms, R2 is a hydroxy group (-OH), a carboxyl group (-COOH), or a linear or cyclic hydrocarbon group with 3 to 10 carbon atoms, 1 to 3 nitrogen atoms, and 1 to 3 oxygen atoms, and x and y are each a mol % of each repeating unit based on the entirety of the polymer of chemical formula 1, where x is 5 to 100 mol %, and y is 0 to 95 mol %.

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Номер записи: 3
07-11-2016 дата публикации

포토레지스트 패턴 코팅용 고분자 및 이를 이용한 반도체 소자의 패턴 형성 방법

Номер: KR0101672720B1
Автор: 이정열, 이재우, 김덕배, 김재현
Принадлежит: 주식회사 동진쎄미켐

... 리쏘그래피 공정의 해상도를 증가시킬 수 있는 포토레지스트 패턴 코팅용 고분자 및 이를 이용한 반도체 소자의 패턴 형성 방법이 개시된다. 상기 포토레지스트 패턴 코팅용 고분자는 하기 화학식으로 표시된다. 상기 화학식에서, R*은 각각 독립적으로 수소 원자 또는 메틸기(-CH3)이고, R1은 탄소수 3 내지 6 및 질소수 1 내지 2의 선형 또는 환형 탄화수소기이고, R2는 탄소수 5 내지 20의 알콕시 벤젠기 또는 알콕시 카보닐기이며, x, y 및 z는 상기 화학식의 고분자를 구성하는 전체 반복단위에 대한 각각의 반복단위의 몰%로서, x는 5 내지 90몰%, y는 5 내지 60 몰%, z는 5 내지 30몰%이다.

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Номер записи: 4
02-05-2017 дата публикации

매생이를 이용한 기능성 제빵 반죽 조성물, 기능성 빵 및 그 제조방법

Номер: KR0101728815B1
Автор: 김태철, 김덕배, 김복희
Принадлежит: 씨제이푸드빌 주식회사

... 본 발명은 매생이를 이용한 기능성 제빵 반죽 조성물, 기능성 빵 및 그 제조방법에 관한 것으로서, 자세하게는 혈당강하 효능이 있으며, 혈액 내 인슐린 함량을 상승시키고 콜레스테롤, 중성지질, LDL 함량을 낮추어 당뇨 및 동맥경화 등의 질병 예방 및 완화에 효과적인 기능성 제빵 반죽 조성물, 기능성 빵 및 그 제조방법에 대한 것이다.

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Номер записи: 5
02-09-2010 дата публикации

POLYMER FOR COATING PHOTORESIST PATTERN, AND METHOD FOR FORMING PATTERN FOR SEMICONDUCTOR DEVICE USING SAME

Номер: WO2010098618A3
Автор: LEE, Jung-Youl, LEE, Jae-Woo, KIM, Deog-Bae, KIM, Jae-Hyun
Принадлежит:

Disclosed are a polymer for coating a photoresist pattern, which can improve the resolution of a lithography process, and a method for forming a pattern of a semiconductor device using the polymer. The polymer for coating a photoresist pattern can be expressed by the chemical formula of claim 1. In chemical formula 1, R* is independently a hydrogen atom or a methyl group (-CH3), R1 is a linear or cyclic hydrocarbon group with 3 to 6 carbon atoms and 1 to 2 nitrogen atoms, R2 is an alkoxy benzene group or an alkoxy carbonyl group with 5 to 20 carbon atoms, and x, y and z are each a mol % of each repeating unit based on the entirety of the polymer of said chemical formula, where x is 5 to 90 mol %, y is 5 to 60 mol %, and z is 5 to 30 mol %.

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Номер записи: 6
17-03-2011 дата публикации

ISOCYANURATE COMPOUND FOR FORMING ORGANIC ANTI-REFLECTIVE LAYER AND COMPOSITION INCLUDING SAME

Номер: WO2011031123A3
Автор: ROH, Hyo-Jung, JU, Dong-Kyu, KIM, Hyun-Jin, KIM, Deog-Bae
Принадлежит:

Disclosed is an isocyanurate compound for forming an organic anti-reflective layer which has excellent stability at high temperature (25℃ or above), an excellent etch rate, and a high reflective index; and a composition including the same. The isocyanurate compound for forming an organic anti-reflective layer is represented as formula 1 of claim 1. In formula 1, R is each independently hydrogen or methyl group, R1 is each independently aliphatic or cyclic saturated or unsaturated hydrocarbon having 1 to 15 carbons and including 0 to 6 hetero atoms, and R2 is each independently aliphatic or cyclic saturated or unsaturated hydrocarbon having 1 to 15 carbons and including 0 to 15 hetero atoms.

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Номер записи: 7
17-03-2011 дата публикации

ISOCYANURATE COMPOUND FOR FORMING ORGANIC ANTI-REFLECTIVE LAYER AND COMPOSITION INCLUDING SAME

Номер: KR2011031123A2
Автор: ROH, Hyo-Jung, JU, Dong-Kyu, KIM, Hyun-Jin, KIM, Deog-Bae
Принадлежит:

Disclosed is an isocyanurate compound for forming an organic anti-reflective layer which has excellent stability at high temperature (25℃ or above), an excellent etch rate, and a high reflective index; and a composition including the same. The isocyanurate compound for forming an organic anti-reflective layer is represented as formula 1 of claim 1. In formula 1, R is each independently hydrogen or methyl group, R1 is each independently aliphatic or cyclic saturated or unsaturated hydrocarbon having 1 to 15 carbons and including 0 to 6 hetero atoms, and R2 is each independently aliphatic or cyclic saturated or unsaturated hydrocarbon having 1 to 15 carbons and including 0 to 15 hetero atoms.

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Номер записи: 8
05-05-2011 дата публикации

COMPOSITION FOR CLEANING PHOTORESIST PATTERN AND FORMING PROTECTIVE FILM

Номер: KR2011052954A2
Автор: LEE, Jun-Gyeong, JANG, Eu-Jean, LEE, Jae-Woo, KIM, Deog-Bae, KIM, Jae-Hyun
Принадлежит:

The present invention provides a composition for cleaning a photoresist pattern and forming a protective film, and a fine pattern formation method of a semiconductor device using the same, which can clean the photoresist pattern and form the protective film on the photoresist pattern by heating the photoresist pattern after cleaning said pattern during a double exposure patterning process. The composition for cleaning the photoresist pattern and forming the protective film comprises: one or more crosslink agents selected from a group that includes compounds displayed in chemical formulas 1 to 3; and a solvent.

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Номер записи: 9
09-12-2010 дата публикации

METHOD FOR FORMING FINE PATTERN IN SEMICONDUCTOR DEVICE

Номер: KR2010140870A2
Автор: LEE, Jun-Kyoung, JANG, Eu-Jean, HAN, Dong-Woo, KIM, Jeong-Sik, LEE, Jung-Youl, LEE, Jae-Woo, KIM, Deog-Bae, KIM, Jae-Hyun
Принадлежит:

The present invention relates to a method for forming a fine pattern in a semiconductor device, using a double exposure patterning process capable of forming a 2nd photoresist pattern by a simple exposure without using an exposure mask. The method for forming a fine pattern in a semiconductor device comprises: forming a 1st photoresist pattern on a semiconductor substrate having a layer to be etched formed thereon; heating (bake-hardening) the 1st photoresist pattern at 110 to 220 degrees Celsius to form an interlayer mirror film; forming a 2nd photoresist film on the resultant; and performing exposure and developing processes on the 2nd photoresist film without using an exposure mask but using light (low-energy light) having an energy value lower than a threshold energy (Eth) of the 2nd photoresist film, thereby forming a 2nd photoresist pattern between the 1st photoresist patterns by diffused reflection of the interlayer mirror film.

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Номер записи: 10
09-05-2016 дата публикации

Polymer for coating photoresist pattern and method for forming pattern for semiconductor device using the same

Номер: KR0101618316B1
Автор: 이정열, 이재우, 김덕배, 김재현
Принадлежит: 주식회사 동진쎄미켐

... 리쏘그래피 공정의 해상도를 증가시킬 수 있는 포토레지스트 패턴 코팅용 고분자 및 이를 이용한 반도체 소자의 패턴 형성 방법이 개시된다. 상기 포토레지스트 패턴 코팅 고분자는 하기 화학식으로 표시된다. 상기 화학식에서, R*은 각각 독립적으로 수소 원자 또는 메틸기(-CH3)이고, R1은 탄소수 1 내지 18의 선형 또는 환형 탄화수소기이고, R2는 히드록시기(-OH), 카르복실기(-COOH), 또는 탄소수 3 내지 10, 질소수 1 내지 3 및 산소수 1 내지 3의 선형 또는 환형 탄화수소기이며, x 및 y는 상기 화학식의 고분자를 구성하는 전체 반복단위에 대한 각각의 반복단위의 몰%로서, x는 5 내지 100몰%이고, y는 0 내지 95 몰%이다.

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Номер записи: 11
03-02-2011 дата публикации

PHOTORESIST COMPOSITION COMPRISING A CROSSLINKABLE CURING SUBSTANCE

Номер: WO2011014011A3
Автор: JANG, Eu-Jean, LEE, Jun-Gyeong, HAN, Dong-Woo, KIM, Jeong-Sik, LEE, Jung-Youl, LEE, Jae-Woo, KIM, Deog-Bae, KIM, Jae-Hyun
Принадлежит:

Disclosed is a photoresist composition comprising a crosslinkable curing substance, able to form a pattern-protecting film on the surface of a photoresist pattern by first forming a photoresist pattern and then heating or exposing to light and heat, in a pattern-forming method employing the double patterning technique. The photoresist composition comprises: from 3 to 30 wt.% of a light-sensitive polymer; from 0.5 to 75 parts by weight of a crosslinking curing agent or agents represented by Chemical formula 1 and/or Chemical formula 2 of Claim 1, with respect to 100 parts by weight of the light-sensitive polymer; from 0.05 to 15 parts by weight of a photoacid generator, with respect to 100 parts by weight of the light-sensitive polymer; and a balance of solvent.

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Номер записи: 12
03-02-2011 дата публикации

PHOTORESIST COMPOSITION COMPRISING A CROSSLINKABLE CURING SUBSTANCE

Номер: KR2011014011A2
Автор: JANG, Eu-Jean, LEE, Jun-Gyeong, HAN, Dong-Woo, KIM, Jeong-Sik, LEE, Jung-Youl, LEE, Jae-Woo, KIM, Deog-Bae, KIM, Jae-Hyun
Принадлежит:

Disclosed is a photoresist composition comprising a crosslinkable curing substance, able to form a pattern-protecting film on the surface of a photoresist pattern by first forming a photoresist pattern and then heating or exposing to light and heat, in a pattern-forming method employing the double patterning technique. The photoresist composition comprises: from 3 to 30 wt.% of a light-sensitive polymer; from 0.5 to 75 parts by weight of a crosslinking curing agent or agents represented by Chemical formula 1 and/or Chemical formula 2 of Claim 1, with respect to 100 parts by weight of the light-sensitive polymer; from 0.05 to 15 parts by weight of a photoacid generator, with respect to 100 parts by weight of the light-sensitive polymer; and a balance of solvent.

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Номер записи: 13
08-05-2018 дата публикации

가교성 경화 물질을 포함하는 포토레지스트 조성물

Номер: KR0101855504B1
Автор: 장유진, 이준경, 한동우, 김정식, 이정열, 이재우, 김덕배, 김재현
Принадлежит: 주식회사 동진쎄미켐

... 이중 패터닝 기술을 이용한 패턴 형성 방법에서, 포토레지스트 패턴 형성 후, 가열 또는 노광 및 가열에 의해 포토레지스트 패턴 표면에 패턴 보호막을 형성할 수 있는, 가교성 경화 물질을 포함하는 포토레지스트 조성물이 개시된다. 상기 포토레지스트 조성물은, 감광성 고분자 3 내지 30중량%; 상기 감광성 고분자 100중량부에 대하여, 화학식 1 및/또는 화학식 2로 표시되는 가교 경화제 0.5 내지 75중량부; 상기 감광성 고분자 100중량부에 대하여, 광산발생제 0.05 내지 15중량부; 및 나머지 용매를 포함한다. [화학식 1] [화학식 2] 화학식 1 및 2에서, R1, R3 및 R4는 탄소수 1 내지 25의 사슬형 또는 고리형 구조의 포화 또는 불포화 탄화수소기이고, R2 및 R5는 탄소수 1 내지 20의 사슬형 또는 고리형 구조의 포화 또는 불포화 탄화수소기이다.

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Номер записи: 14
02-09-2010 дата публикации

POLYMER FOR COATING A PHOTORESIST PATTERN, AND METHOD FOR FORMING A PATTERN OF A SEMICONDUCTOR DEVICE USING SAME

Номер: WO2010098617A3
Автор: LEE, Jung-Youl, LEE, Jae-Woo, KIM, Deog-Bae, KIM, Jae-Hyun
Принадлежит:

Disclosed are a polymer for coating a photoresist pattern, which can improve the resolution of a lithography process, and a method for forming a pattern of a semiconductor device using the polymer. The polymer for coating a photoresist pattern is expressed in chemical formula 1 of claim 1. In chemical formula 1, R* is independently a hydrogen atom or a methyl group (-CH3), R1 is a linear or cyclic hydrocarbon group with 1 to 18 carbon atoms, R2 is a hydroxy group (-OH), a carboxyl group (-COOH), or a linear or cyclic hydrocarbon group with 3 to 10 carbon atoms, 1 to 3 nitrogen atoms, and 1 to 3 oxygen atoms, and x and y are each a mol % of each repeating unit based on the entirety of the polymer of chemical formula 1, where x is 5 to 100 mol %, and y is 0 to 95 mol %.

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Номер записи: 15
27-02-2017 дата публикации

유기 반사방지막 형성용 이소시아누레이트 화합물 및 이를 포함하는 조성물

Номер: KR0101710415B1
Автор: 노효정, 주동규, 김현진, 김덕배
Принадлежит: 주식회사 동진쎄미켐

... 고온(25℃ 이상)에서의 안정성 및 에칭률(etch rate)이 우수하고, 고굴절률을 갖는 유기 반사방지막 형성용 이소시아누레이트 화합물 및 이를 포함하는 조성물이 개시된다. 상기 유기 반사방지막 형성용 이소시아누레이트 화합물은, 하기 화학식 1로 표시된다. [화학식 1] 상기 화학식 1에서, R은 수소 또는 메틸기이고, R1은, 각각 독립적으로, 0 내지 6의 헤테로 원자를 포함하는 탄소수 1 내지 15의 사슬형 또는 고리형의 포화 또는 불포화 탄화수소이고, R2는 0 내지 15의 헤테로 원자를 포함하는 탄소수 1 내지 15 사슬형 또는 고리형의 포화 또는 불포화 탄화수소이다.

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Номер записи: 16
05-05-2011 дата публикации

COMPOSITION FOR CLEANING PHOTORESIST PATTERN AND FORMING PROTECTIVE FILM

Номер: WO2011052954A3
Автор: LEE, Jun-Gyeong, JANG, Eu-Jean, LEE, Jae-Woo, KIM, Deog-Bae, KIM, Jae-Hyun
Принадлежит:

The present invention provides a composition for cleaning a photoresist pattern and forming a protective film, and a fine pattern formation method of a semiconductor device using the same, which can clean the photoresist pattern and form the protective film on the photoresist pattern by heating the photoresist pattern after cleaning said pattern during a double exposure patterning process. The composition for cleaning the photoresist pattern and forming the protective film comprises: one or more crosslink agents selected from a group that includes compounds displayed in chemical formulas 1 to 3; and a solvent.

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Номер записи: 17
16-11-2016 дата публикации

DEVICE AND METHOD FOR INSPECTING TOOL OF AUTOMATIC TOOL CHANGER

Номер: KR101672807B1
Автор: PYEON, CHEON BEOM, KIM, DEOK BAE, GWON, HYEOK, PARK, YONG JIN, DO, SANG HO, SUNG, MIN HO, LEE, DONG HYUN
Принадлежит: PYEON, CHEON BEOM

The present invention relates to a device and a method for inspecting a tool of an automatic tool changer. The device for inspecting a tool of an automatic tool changer comprises: a photographing device formed to photograph a tool mounted on an automatic tool changer in a longitudinal direction; a lighting device which is formed on a front surface of the photographing device and emits light from a rear surface of the tool photographed by the photographing device; and a reference block which is formed on a front surface of the tool in parallel with the tool and indicates a reference value when measuring a length of the tool using an image photographed by the photographing device. Also, the method for inspecting a tool of an automatic tool changer comprises: a tool information input step (S10) of setting information about a type, a length, a diameter, and a seal for each tool mounted on an automatic tool changer and an error range; a tool preparing step (S20) of moving the tool whose information ...

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Номер записи: 18
24-12-2015 дата публикации

Photosensitive polymer and photoresist composition including the same

Номер: KR0101579730B1
Автор: 김정우, 김덕배, 김재현
Принадлежит: 주식회사 동진쎄미켐

... 친수성 및 친유성 작용기를 포함하는 사슬이동제를 이용한 RAFT(reversible addition fragmentation chain transfer) 중합방법으로 감광성 고분자를 제조함으로써, 감광성 고분자의 분자량과 현상액에 대한 용해도 및 포토레지스트의 접촉각을 조절할 수 있는 감광성 고분자 및 이를 포함하는 포토레지스트 조성물이 개시된다. 상기 감광성 고분자는, 하기 화학식의 구조를 가진다. 상기 화학식에서, R1, R2 및 R3는 수소 또는 메틸기이고, R4는 C1 내지 C40의 선형, 분지형, 단일환형 또는 다환형의 알킬기이고, R5는 히드록시기 또는 히드록시기 및 할로겐기로 치환되거나, 에테르기 또는 에스테르기를 포함하는, C1 내지 C40의 선형, 분지형, 단일환형 또는 다환형의 알킬기이고, R6는 락톤기를 포함하는, C1 내지 C40의 선형, 분지형, 단일환형 또는 다환형의 알킬기이며, n은 1 내지 15의 정수이고, X는 이종 원소를 포함하는 C5 내지 C120의 선형 또는 분지형의 알킬기이고, a, b 및 c는 상기 고분자 수지를 이루는 전체 단량체에 대한 각 반복 단위의 몰%로서, a, b 및 c는 각각 1 ~ 99몰%, 1 ~ 99몰% 및 0 ~ 98몰%이다.

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Номер записи: 19
17-01-2017 дата публикации

METHOD FOR PREPARING POROUS SILICA-TITANIA COMPOSITE POWDER, POROUS SILICA-TITANIA COMPOSITE POWDER AND UV SHIELDING MATERIAL USING SAME

Номер: KR1020170006077A
Автор: CHO, YOUNG SANG, KIM, DUCK BAE
Принадлежит:

The present invention relates to a method for preparing porous silica-titania composite powder. The method comprises the steps of: forming a mixed precursor solution containing a silica precursor material mixed with titania nanoparticles having UV shielding property; forming water-in-oil emulsion from the mixed precursor solution and a polar solution to which polymer particles are added; heating the water-in-oil emulsion to allow evaporation of the polar solvent contained in the water-in-oil emulsion to form composite powder of titania-silica-polymer particles through self-assemblage; and firing the composite powder of titania-silica-polymer particles to remove the polymer particles in the composite powder selectively, thereby forming porous silica-titania composite powder comprising macroporous silica particles to which the titania nanoparticles are attached. The porous silica-titania composite powder obtained by the method according to the present invention comprises micrometer-scaled ...

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Номер записи: 20
03-02-2011 дата публикации

PHOTORESIST COMPOSITION COMPRISING A CROSSLINKABLE CURING SUBSTANCE

Номер: KR2011014011A9
Автор: JANG, Eu-Jean, LEE, Jun-Gyeong, HAN, Dong-Woo, KIM, Jeong-Sik, LEE, Jung-Youl, LEE, Jae-Woo, KIM, Deog-Bae, KIM, Jae-Hyun
Принадлежит:

Disclosed is a photoresist composition comprising a crosslinkable curing substance, able to form a pattern-protecting film on the surface of a photoresist pattern by first forming a photoresist pattern and then heating or exposing to light and heat, in a pattern-forming method employing the double patterning technique. The photoresist composition comprises: from 3 to 30 wt.% of a light-sensitive polymer; from 0.5 to 75 parts by weight of a crosslinking curing agent or agents represented by Chemical formula 1 and/or Chemical formula 2 of Claim 1, with respect to 100 parts by weight of the light-sensitive polymer; from 0.05 to 15 parts by weight of a photoacid generator, with respect to 100 parts by weight of the light-sensitive polymer; and a balance of solvent.

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Номер записи: 21
09-12-2010 дата публикации

METHOD FOR FORMING FINE PATTERN IN SEMICONDUCTOR DEVICE

Номер: WO2010140870A3
Автор: LEE, Jun-Kyoung, JANG, Eu-Jean, HAN, Dong-Woo, KIM, Jeong-Sik, LEE, Jung-Youl, LEE, Jae-Woo, KIM, Deog-Bae, KIM, Jae-Hyun
Принадлежит:

The present invention relates to a method for forming a fine pattern in a semiconductor device, using a double exposure patterning process capable of forming a 2nd photoresist pattern by a simple exposure without using an exposure mask. The method for forming a fine pattern in a semiconductor device comprises: forming a 1st photoresist pattern on a semiconductor substrate having a layer to be etched formed thereon; heating (bake-hardening) the 1st photoresist pattern at 110 to 220 degrees Celsius to form an interlayer mirror film; forming a 2nd photoresist film on the resultant; and performing exposure and developing processes on the 2nd photoresist film without using an exposure mask but using light (low-energy light) having an energy value lower than a threshold energy (Eth) of the 2nd photoresist film, thereby forming a 2nd photoresist pattern between the 1st photoresist patterns by diffused reflection of the interlayer mirror film.

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Номер записи: 22
14-03-2017 дата публикации

반도체 소자의 미세 패턴 형성 방법

Номер: KR0101715343B1
Автор: 이준경, 이정열, 김정식, 장유진, 이재우, 김덕배, 김재현
Принадлежит: 주식회사 동진쎄미켐

... 노광 마스크 없이 단순 노광에 의하여 2차 포토레지스트 패턴을 형성할 수 있는 이중 노광 패터닝 공정을 이용한, 반도체 소자의 미세 패턴 형성 방법이 개시된다. 상기 반도체 소자의 미세 패턴 형성 방법은, 피식각층이 형성된 반도체 기판 상에 제1 포토레지스트 패턴을 형성하는 단계; 상기 제1 포토레지스트 패턴 상에 층간거울막 조성물을 코팅하여 층간거울막을 형성하는 단계; 상기 결과물 상에 제2 포토레지스트막을 형성하는 단계; 및 상기 제2 포토레지스트막에 노광 마스크 없이 제2 포토레지스트막의 문턱에너지(Threshold Energy; Eth)보다 낮은 값의 에너지를 갖는 광(저에너지 광)으로 노광 및 현상 공정을 수행하여, 상기 제1 포토레지스트 패턴 사이에 층간거울막의 난반사에 의한 제2 포토레지스트 패턴을 형성하는 단계를 포함한다.

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Номер записи: 23
09-11-2015 дата публикации

COIL SPRING PROCESSING MACHINE USING MICROWIRE

Номер: KR101567298B1
Автор: PYEON, CHEON BEOM, KIM, DEOK BAE, GWON, HYEOK, PARK, YONG JIN, DO, SANG HO, LEE, DONG HYUN
Принадлежит: PYEON, CHEON BEOM

The present invention relates to a coil spring processing machine using a microwire, characterized by comprising: a stack part where a wound wire is installed to process a spring; an input part pressing the wire wound around the stack part by two roller shafts, and placing into a process part; a process part processing the wire input through an input part into a coil spring shape; a cutting part cutting one side of the wire processed into a coil spring shape by the process part; a control part automatically controlling the spring process by the input part and the cutting part; and an output part receiving information from the control part, outputting on a screen, and enabling a user to manually control the machine. COPYRIGHT KIPO 2016 ...

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Номер записи: 24
14-12-2016 дата публикации

반도체 소자의 미세 패턴 형성 방법

Номер: KR0101685903B1
Автор: 이준경, 장유진, 한동우, 김정식, 이정열, 이재우, 김덕배, 김재현
Принадлежит: 주식회사 동진쎄미켐

... 노광 마스크 없이 단순 노광에 의하여 2차 포토레지스트 패턴을 형성할 수 있는 이중 노광 패터닝 공정을 이용한, 반도체 소자의 미세 패턴 형성 방법이 개시된다. 상기 반도체 소자의 미세 패턴 형성 방법은, 피식각층이 형성된 반도체 기판 상에 제1 포토레지스트 패턴을 형성하는 단계; 상기 제1 포토레지스트 패턴을 110 내지 220℃로 가열(하드닝 베이크)하여 층간 거울막을 형성하는 단계; 상기 결과물 상에 제2 포토레지스트막을 형성하는 단계; 및 상기 제2 포토레지스트막에 노광 마스크 없이 제2 포토레지스트막의 문턱에너지(Threshold Energy; Eth)보다 낮은 값의 에너지를 갖는 광(저에너지 광)으로 노광 및 현상 공정을 수행하여, 상기 제1 포토레지스트 패턴 사이에 층간 거울막의 난반사에 의한 제2 포토레지스트 패턴을 형성하는 단계를 포함한다.

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Номер записи: 25
14-12-2018 дата публикации

ERECT TYPE CONTINUOUS PRESSURE-COOKING DEVICE

Номер: KR101929305B1
Автор: KIM DEOK BAE
Принадлежит: HANSUNG TECH CO., LTD.

The present invention relates to a continuous pressure-cooking device for continuously cooking ingredients (soybean oil meal, soybeans, bran, and the like) with pressure, and more specifically, relates to an erect (vertical) type continuous pressure-cooking device capable of increasing thermal efficiency and productivity. The erect type continuous pressure-cooking device includes: an erect type continuous pressure cooking body including an ingredient inlet formed in the upper part; a screw type continuous discharge device formed in the lower part of the body to continuously discharge cooked ingredients to the outside; an ingredient discharge opening and closing device located in the upper part of the continuous discharge device and controlling the discharge of the ingredients; a steam supply device supplying steam to the ingredients in the pressure cooking body to cook the ingredients with pressure; and an ingredient breaking device preventing the ingredients in the pressure cooking body ...

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Номер записи: 26