25-07-2018 дата публикации
Номер: KR1020180084497A
Принадлежит:
According to a technical idea of the present invention, provided is a method of fabricating a memory device with improved productivity and fabrication efficiency. The method of fabricating the memory device includes the following steps: forming, on a substrate, a magnetic tunnel junction (MTJ) layer including a first magnetization layer, a second magnetization layer, and a tunnel barrier layer between the first magnetization layer and the second magnetization layer; performing a first heat treatment on the MTJ layer; forming a plurality of MTJ structures by patterning the MTJ layer; performing a second heat treatment on the MTJ structures at a lower temperature than the first heat treatment; forming a variable resistance memory including the MTJ structures; and performing a magnetic field treatment on the variable resistance memory. COPYRIGHT KIPO 2018 (AA) Start (BB) End (S10) Form, on substrate, magnetic tunnel junction (MTJ) layer including first magnetization layer, second magnetization ...
Подробнее