30-09-2015 дата публикации
Номер: KR1020150108793A
Принадлежит:
Provided are a magnetic junction used in a magnetic device, a method for providing a magnetic memory on a substrate, and a magnetic junction. The method for providing a magnetic junction on a substrate provides a free layer switched between multiple stable magnetic states, when a writing current flows through a magnetic junction, provides a non-magnetic spacer layer, provides a pinned layer. the non-magnetic spacer layer is arranged between the free layer and a pinned layer, and any one among providing the free layer and providing the pinned layer includes multiple steps. The multiple steps included in providing the free layer includes a first multiple steps, and multiple steps included in providing the pinned layer includes a second multiple steps. The first multiple steps deposits a first area of the free layer, deposits a first sacrifice layer, anneals the first area and the first sacrifice layer at a first temperature greater than the 25°C, removes the first sacrifice layer, and deposits ...
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