12-10-2017 дата публикации
Номер: KR1020170110768A
Принадлежит:
A non-volatile memory device according to an embodiment of the present invention may include a cell array, a first page buffer, and a second page buffer. The cell array may include a plurality of memory cells. The first page buffer is connected to the first memory cell of the cell array and, when a program verifying operation is performed, can store first sensing data generated by sensing whether the programming of the first memory cell is completed. The second page buffer is connected to the second memory cell of the cell array and, when the program verifying operation is performed, can generate and store first verification data based on second sensing data generated by sensing whether the programming of the second memory cell is completed, can receive the first sensing data from the first page buffer, and can store second verification data generated by accumulating the first sensing data and the first verification data. It is possible to provide a nonvolatile memory device for internally ...
Подробнее