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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Применить Всего найдено 49. Отображено 49.
11-05-2016 дата публикации

Apparatus and method for growing large diameter single crystal

Номер: KR0101619610B1
Автор: 여임규, 강덕홍, 전명철, 은태희, 박노형
Принадлежит: 주식회사 포스코, 재단법인 포항산업과학연구원

... 본 발명은 대구경 단결정 성장장치 및 성장방법에 관한 것으로, 도가니; 도가니의 외부에 설치되고, 도가니를 가열하는 코일; 도가니의 내부에서 하부에 배치되는 종자정; 및 도가니의 내부에서 측면에 배치되고, 원료 분말을 수용하는 용기를 포함하는 단결정 성장장치를 제공한다.

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Номер записи: 1
17-09-2015 дата публикации

METHOD FOR GROWING SINGLE CRYSTAL SILICON CARBIDE

Номер: KR0101553387B1
Автор: 여임규, 김흥락, 이승석, 은태희, 김장열, 서한석
Принадлежит: 재단법인 포항산업과학연구원

... 본 발명에 따른 단결정 탄화 규소 성장 방법은 종자정의 일면에 보호막을 형성하는 단계, 보호막 위에 접착층을 형성하는 단계, 접착층을 이용하여 잉곳 성장 장치의 종자정 홀더에 종자정을 고정시키는 단계, 종자정 위에 단결정 탄화 규소를 성장시키는 단계를 포함한다.

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Номер записи: 2
04-07-2018 дата публикации

METHOD FOR FABRICATING SILICON CARBIDE EPITAXIAL WAFER

Номер: KR1020180074893A
Автор: SEO, HAN SEOK, KIM, JANG YUL, EUN, TAI HEE, YEO, IM GYU, CHUN, MYONG CHUEL
Принадлежит:

Provided is a method for fabricating a silicon carbide epitaxial wafer. According to the present invention, the method includes: a temperature raising step of raising the temperature inside of a reactor to a set temperature after a silicon carbide (SiC) substrate is loaded in a reactor; an etching step of etching a surface of the silicon carbide substrate for a preset time in the temperature raising step, while raising the temperature inside the reactor; a buffer layer forming step, performed as soon as the etching step is finished, of forming a buffer layer on the silicon carbide substrate by supplying SiH_4 gas and C_3H_8 gas, which are process gases, into the reactor; and an epitaxial thin film growing step, after the buffer layer is formed, of forming an epitaxial layer by growing an epitaxial thin film on the silicon carbide (SiC) substrate by using SiH_4 gas and C_3H_8 gas as process gas at the preset temperature and preset pressure, wherein hydrogen chloride (HCl) is introduced as ...

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Номер записи: 3
10-05-2016 дата публикации

APPARATUS FOR GROWING LARGE-DIAMETER SINGLE CRYSTAL

Номер: KR1020160049624A
Автор: YEO, IM GYU, PARK, NO HYUNG, EUN, TAI HEE
Принадлежит:

Provided is an apparatus for growing a large-diameter single crystal. According to the present invention, the apparatus for growing a large-diameter single crystal comprises: a crucible having an internal space in which a single crystal material is charged; an insulator which is provided outside the crucible and surrounds the crucible; a quartz tube which is provided outside the insulator and surrounds the crucible and the insulator; a seed crystal which is attached to a seed crystal holder; a heating means which is provided outside the quartz tube, and is adapted to heat the crucible; and an inducement part which is formed in an upper portion of an interior of the crucible, and induces sublimated material to become a seed crystal. The inducement part has a predetermined thickness and height, is formed such that upper and lower portions thereof communicate with each other, and is shaped in the form of a truncated cone whose diameter increases in a vertical downward direction. COPYRIGHT ...

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Номер записи: 4
13-06-2016 дата публикации

growing apparatus for large diameter single crystal

Номер: KR0101629445B1
Автор: 여임규, 박노형, 은태희
Принадлежит: 재단법인 포항산업과학연구원

... 대구경 단결정 성장장치를 제공한다. 본 발명에 따르면, 단결정 원료 물질이 장입되는 내부 공간이 마련된 도가니, 상기 도가니의 외측에 제공되고, 상기 도가니를 둘러싸는 단열재, 상기 단열재의 외부에 제공되고, 상기 도가니 및 상기 단열재를 둘러싸는 석영관, 종자정 홀더에 부착되는 종자정, 상기 석영관 외부에 마련되어 상기 도가니를 가열하기 위한 가열수단, 및 상기 도가니 내측 상부에 형성되어 승화를 원료를 종자정으로 유도하기 위한 유도부를 포함하고, 상기 유도부는 일정한 두께와 높이를 갖고 상, 하부가 관통 형성되고, 상부에서 하부로 갈수록 직경이 커지는 원뿔대 형상으로 형성된다.

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Номер записи: 5
12-08-2015 дата публикации

Apparatus and method for large single crystal growth using artificial graphite

Номер: KR0101543920B1
Автор: 여임규, 박노형, 이승석, 김장열, 은태희, 김흥락, 서한석
Принадлежит: 주식회사 포스코, 재단법인 포항산업과학연구원

... 본 발명은 인조흑연을 활용한 대구경 단결정 성장장치 및 방법에 관한 것으로, 도가니 내부에 설치되는 종자정 받침대; 종자정 받침대에 적층되는 인조흑연 시트; 및 인조흑연 시트에 적층되는 종자정을 포함하는 단결정 성장장치를 제공한다.

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Номер записи: 6
22-07-2015 дата публикации

Apparatus and method for large diameter single crystal growth using physical coupling

Номер: KR0101538556B1
Автор: 여임규, 김장열, 박노형, 이승석, 은태희
Принадлежит: 주식회사 포스코, 재단법인 포항산업과학연구원

... 본 발명은 물리적 체결을 이용한 대구경 단결정 성장장치 및 방법에 관한 것으로, 외주면에 나사선을 갖는 받침대; 내주면에 나사선을 갖고 받침대와 나사 결합하는 뚜껑; 및 받침대와 뚜껑 사이에 삽입되는 종자정을 포함하는 단결정 성장장치를 제공한다.

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Номер записи: 7
16-06-2015 дата публикации

GROWTH DEVICE FOR SILICON CARBIDE (SiC) SINGLE CRYSTAL

Номер: KR1020150066015A
Автор: YEO, IM GYU, PARK, NO HYUNG, EUN, TAI HEE
Принадлежит:

Provided is a growth device for SiC single crystal. According to the present invention, a SiC single crystal growth device applied to large scale diametrical silicon carbide (SiC) single crystal growth having diameter of 4 inch or more comprises a crucible including an internal space in which a raw material is inserted; a seeded solution support attached to a seeded solution; an insulation material and a quartz pipe surrounding the crucible; a heating means formed on the outside of the quartz pipe, and heating the crucible; and a temperature distribution reduction part for reducing temperature distribution of an inner wall part and center of the crucible , and provided inside the crucible. COPYRIGHT KIPO 2015 ...

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Номер записи: 8
17-07-2015 дата публикации

method for growing SiC single crystal

Номер: KR0101537385B1
Автор: 여임규, 김흥락, 이승석, 은태희, 김장열, 서한석
Принадлежит: 재단법인 포항산업과학연구원

... 탄화규소 단결정 성장 방법을 제공한다. 본 발명에 따르면, 도가니, 종자정, 종자정 받침대, 가열수단을 포함하는 탄화규소 단결정 성장 장치를 이용하여 탄화규소 단결정을 성장시키는 방법에 있어서, 상기 도가니 내부에 원료 물질을 장입하는 원료 물질 장입 단계, 접착제를 이용하여 종자정을 종자정 받침대에 부착하는 종자정 부착 단계, 상기 종자정이 부착된 종자정 받침대를 탄화수소 단결정 성장 장치 내에 인입시켜 도가니 내부 상부에 장착하는 종자정 받침대 장착 단계, 상기 가열수단을 이용하여 도가니를 성장 온도로 가열하여, 상기 도가니 내에 장입된 원료 물질을 승화시켜 단결정을 성장시키는 단결정 성장 단계, 및 상기 단결정 성장 단계에서 단결정 초기 성장시 실리콘 과잉 상태인 도가니 내부에서 원료 물질과 반응하여 실리콘 과잉 분위기를 억제하기 위한 억제 가스를 공급하는 억제 가스 공급 단계를 포함한다.

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Номер записи: 9
16-06-2016 дата публикации

REVERSE SUBLIMATION APPARATUS FOR SINGLE CRYSTAL GROWTH

Номер: KR1020160069095A
Автор: YEO, IM GYU, EUN, TAI HEE, CHUN, MYONG CHUEL, PARK, NO HYUNG, KIM, JANG YUL
Принадлежит:

Provided is a reverse sublimation apparatus for single crystal growth. The present invention includes: a crucible provided with an inner space for single crystal raw material powder insertion; an insulator and a quartz pipe surrounding the crucible; heating means for heating the crucible, the heating means being provided outside the quartz pipe; and an annular powder support positioned in an upper portion of the crucible, the powder support being used for insertion and fixing of sintered raw material powder. An upper opening portion is formed in an upper end portion of the powder support and the upper opening portion is used for sintered raw material powder insertion. An inside opening portion is formed in an upper portion of an inside surface of the powder support and the inside opening portion is to increase a sublimation area of the sintered raw material powder. COPYRIGHT KIPO 2016 ...

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Номер записи: 10
01-06-2017 дата публикации

METHOD FOR GROWING SILICON CARBIDE EPITAXIAL THIN FILM

Номер: KR101742210B1
Автор: SEO, HAN SEOK, CHUN, MYONG CHUEL, PARK, WOO JIN, EUN, TAI HEE, YEO, IM GYU, KIM, JANG YUL
Принадлежит: RESEARCH INSTITUTE OF INDUSTRIAL SCIENCE & TECHNOLOGY

According to an embodiment of the present invention, provided is a method for growing a silicon carbide (SiC) epitaxial thin film capable of reducing a micro pipe of an epitaxial thin film generated when a SiC epitaxial thin film is grown. The method comprises: a heating step of inserting a SiC substrate in a reactor and heating the inside of the reactor; an etching step of etching the surface of the SiC substrate at the same time with the heating step; a buffer layer forming step of supplying process gas into the reactor and forming a buffer layer on the SiC substrate; and an epitaxial thin film growing step of growing an epitaxial thin film on the SiC substrate using the process gas after the buffer layer is formed, and forming an epitaxial layer. In the epitaxial thin film growing step, a mole ratio of C/Si is 0.8-1.0. COPYRIGHT KIPO 2017 ...

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Номер записи: 11
26-02-2019 дата публикации

탄화규소 에피 웨이퍼 제조 방법

Номер: KR0101951838B1
Автор: 서한석, 김장열, 은태희, 여임규, 전명철
Принадлежит: 주식회사 포스코, 재단법인 포항산업과학연구원

... 탄화규소 에피 웨이퍼 제조 방법을 제공한다. 본 발명에 따르면, 반응 장치(reactor) 내에 탄화규소(SiC) 기판을 장입한 후, 상기 반응 장치 내부를 설정 온도로 승온시키는 승온 단계, 상기 승온 단계에서 상기 반응 장치 내부를 승온시키면서 행해지고, 상기 탄화규소 기판 표면을 설정 시간 동안 에칭하는 에칭 단계, 상기 에칭 단계가 끝남과 동시에 행해지고, 상기 반응 장치 내에 공정가스인 SiH4 가스와 C3H8 가스를 공급하여 상기 탄화규소(SiC) 기판에 버퍼층을 형성하는 버퍼층 형성 단계, 및 상기 버퍼층이 형성된 후, 설정 온도 및 설정 압력 하에서 공정 가스로서 SiH4 가스와 C3H8 가스를 사용하여 상기 탄화규소(SiC) 기판에 에피 박막을 성장시켜 에피층을 형성하는 에피 박막 성장 단계를 포함하고, 상기 버퍼층 형성 단계 및 상기 에피 박막 성장 단계에서는 공정 가스로서 염화수소(HCl)가 도입되고, 상기 인-시튜 에칭 단계에서는 상기 반응 장치 내에 수소 또는 수소(H2)와 염화수소(HCl)의 혼합 가스가 공급되고, 상기 버퍼층 형성 단계 및 상기 에피 박막 성장 단계에서는 도핑 가스로서 질소(N2)가 도입되며, 상기 버퍼층 형성 단계는 초기 공정 가스 유량을 상기 에피 박막 성장 단계에서 주입하는 공정 가스 유량 대비 1/5 이하로 제어하는 버퍼층 형성 초기 공정 가스 유량 제어 단계를 포함한다.

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Номер записи: 12
07-07-2015 дата публикации

CRUCIBLE FOR GROWING SINGLE

Номер: KR1020150076413A
Автор: LEE, SEUNG SEOK, LEE, WON JAE, EUN, TAI HEE, YEO, IM GYU
Принадлежит:

In the present invention, disclosed is a crucible for growing single crystal, comprising a main body which has an inner space in which raw materials are inserted; a cover member which installed to seal the inner space of the main body; a seed crystal holder member which is installed in the cover member and is protruded toward inner space of the main body to which seed crystal for growing single crystal is attached; and a heater which heats the main body wherein the seed crystal holder member comprise a first side part fixed on the cover member and a second side part having the seed crystal to face the first side part, and contact area of the first side part and the cover member can be formed and be smaller than that of the seed crystal and the second side part. COPYRIGHT KIPO 2015 ...

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Номер записи: 13
07-07-2015 дата публикации

APPARATUS AND METHOD FOR GROWING LARGE-DIAMETER SINGLE CRYSTAL USING ARTIFICIAL GRAPHITE

Номер: KR1020150076273A
Автор: YEO, IM GYU, PARK, NO HYUNG, LEE, SEUNG SEOK, KIM, JANG YUL, EUN, TAI HEE, KIM, HEUNG RAK, SEO, HAN SEOK
Принадлежит:

The present invention relates to an apparatus and a method for growing a large-diameter single crystal using artificial graphite. Provided is an apparatus for growing a single crystal, which comprises: a seed support installed inside a crucible; an artificial graphite sheet laminated on the seed support; and a seed laminated on the artificial graphite sheet. According to the present invention, the temperature difference between the center part and the outer part of the seed can be reduced using an artificial graphite sheet with excellent heat transmission in X-Y directions, and capable of manufacturing an ingot having a high radius of curvature due to a reduction of the temperature difference. COPYRIGHT KIPO 2015 ...

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Номер записи: 14
03-07-2015 дата публикации

METHOD FOR GROWING SINGLE CRYSTAL SILICON CARBIDE

Номер: KR1020150075220A
Автор: YEO, IM GYU, KIM, HEUNG RAK, LEE, SEUNG SEOK, EUN, TAI HEE, KIM, JANG YUL, SEO, HAN SEOK
Принадлежит:

According to the present invention, a method for growing single crystal silicon carbide comprises the steps of: forming a protection layer on one side of a seed crystal; forming an adhesion layer on the top of the protection layer; fixating the seed crystal on a seed crystal holder of an ingot growing device using the adhesion layer; and growing single crystal silicon carbide on the top of the seed crystal. COPYRIGHT KIPO 2015 (S106) Step of secondary applying a liquid organic matter (S108) Step of forming a growth layer (S104) Step of forming a protection layer (S100) Step of washing a seed crystal (S102) Step of primary applying a liquid organic matter ...

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Номер записи: 15
17-09-2015 дата публикации

NITROGEN GAS PASSIVATION METHOD FOR SEED AND METHOD FOR GROWING SINGLE CRYSTAL USING THE SAME

Номер: KR0101553386B1
Автор: 은태희, 박노형, 여임규
Принадлежит: 재단법인 포항산업과학연구원

... 본 발명은 종자정 질화처리 방법 및 이를 이용한 단결정 성장 방법에 관한 것으로, 종자정의 일면에 그라파이트 필름(graphite film) 또는 글루(glue)를 코팅하고, 상기 코팅된 종자정을 열처리하여 표면의 유기물질을 제거한 다음, 상기 유기물질이 제거된 종자정을 퍼지(purge)하여 산소를 제거하고, 상기 퍼지된 종자정을 질소분위기에서 질화처리하는 종자정 질화처리 방법과 이를 이용한 단결정 성장 방법이 개시된다.

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Номер записи: 16
31-08-2016 дата публикации

역 승화 단결정 성장장치

Номер: KR0101649543B1
Автор: 여임규, 이승석, 전명철, 박노형, 은태희
Принадлежит: 주식회사 포스코, 재단법인 포항산업과학연구원

... 역 승화 단결정 성장장치를 제공한다. 본 발명에 따르면, 단결정 원료 분말이 장입되는 내부공간이 마련된 도가니, 상기 도가니를 둘러싸는 단열재 및 석영관, 상기 석영관 외부에 마련되어 상기 도가니를 가열하기 위한 가열수단, 상기 도가니의 내부에 위치되고, 원료 분말을 단결정 성장시키는 종자정, 및 상기 종자정 외측에 형성되고, 상기 도가니 바닥면 또는 내주면의 다결정 생성을 방지할 수 있도록 상기 도가니 하부로 가스 배출을 유도하기 위한 유도부를 포함한다.

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Номер записи: 17
03-07-2015 дата публикации

HIGH SPEED SILICON CARBIDE EPITAXY GROWING PROCESS

Номер: KR1020150075195A
Автор: SEO, HAN SEOK, LEE, SEUNG SEOK, KIM, JANG YUL, EUN, TAI HEE, KIM, HEUNG RAK, YEO, IM GYU
Принадлежит:

The present invention relates to a SiC substrate having an epitaxial layer formed thereon, wherein the SiC substrate includes: a SiC substrate; and a SiC epitaxial layer formed on the substrate. A thickness of the epitaxial layer is uniform even at a high epitaxial growing speed, and the epitaxial layer with controlled generation of Si droplet is formed on the substrate. COPYRIGHT KIPO 2015 ...

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Номер записи: 18
08-06-2015 дата публикации

APPARATUS AND METHOD OF FLATTENING SILICON CARBIDE (SiC) SUBSTRATE

Номер: KR1020150062244A
Автор: KIM, JANG YUL, KIM, HEUNG RAK, LEE, SEUNG SEOK, EUN, TAI HEE, YEO, IM GYU, SEO, HAN SEOK
Принадлежит:

To maximally shorten time required for the grinding process of a SiC substrate, an apparatus and a method of flattening a silicon carbide substrate are provided. The apparatus includes a chuck table for installing a SiC substrate, a grinding wheel which rotates with high speed and grinds the surface of the SiC substrate, a cooling water supply line for supplying cooling water between the substrate and the grinding wheel, and a grinding supply line for supplying grinding accelerator between the substrate and the grinding wheel. The grinding supply line supplies a mixture of amine-based piperazine and hydrogen peroxide (H2O2). COPYRIGHT KIPO 2015 ...

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Номер записи: 19
07-07-2015 дата публикации

METHOD OF MANUFACTURING SIC SUBSTRATE

Номер: KR1020150076444A
Автор: SEO, HAN SEOK, KIM, HEUNG RAK, KIM, DONG SOO, LEE, SEUNG SEOK, EUN, TAI HEE, YEO, IM GYU, KIM, JANG YUL
Принадлежит:

A method of manufacturing silicon carbide (SiC) substrate according to the present invention is a method to grow SiC on a chemical vapor deposition device, wherein the method comprises the steps of: placing a substrate in a chamber of a chemical vapor deposition device; increasing the temperature inside the chamber; etching the surfaces of the substrate; doping on the substrate to from a buffer layer; supplying SiH_4, C_3H_8, and N_2 into the chamber to form a SiC layer on the buffer layer by epitaxial growth; and cooling the chamber, wherein a ratio of C and Si contained in SiH_4 and C_3H_8 is not less than 1.2 to form a SiC layer. COPYRIGHT KIPO 2015 (BB) Time (AA) Temperature ...

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Номер записи: 20
07-07-2015 дата публикации

APPARATUS AND METHOD FOR FLATTENING SILICON CARBIDE SUBSTRATE

Номер: KR1020150076436A
Автор: KIM, JANG YUL, KIM, HEUNG RAK, LEE, JAE YOON, LEE, SEUNG SEOK, EUN, TAI HEE, YEO, IM GYU, SEO, HAN SEOK
Принадлежит:

To improve a surface roughness by processing the scratch of a substrate in the polishing process of an SiC substrate, provided is an apparatus for flattening the SiC substrate, which includes a polishing platen on which the surface of the SiC substrate is polished, a polishing head which mounts the SiC substrate and presses and closely attaches the SiC substrate on the polishing platen, and an abrasive supply line which is formed between the substrate and the polishing platen to supply abrasives. The abrasive supply line has a structure to supply a mixture of a diamond particle and a ceramic particle. COPYRIGHT KIPO 2015 ...

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Номер записи: 21
07-07-2015 дата публикации

APPARATUS FOR GROWING SINGLE CRYSTAL OF SILICON CARBIDE AND METHOD FOR GROWING SAME USING APPARATUS

Номер: KR1020150076272A
Автор: EUN, TAI HEE, YEO, IM GYU, KIM, JANG YUL, LEE, SEUNG SEOK, PARK, NO HYUNG
Принадлежит:

The present invention relates to an apparatus for growing single crystal of silicon carbide and a method for growing the single crystal of silicon carbide using the apparatus wherein the apparatus comprises a carbonaceous crucible in which raw materials of single crystals are inserted; a seed crystal holder connected to the upper surface of the crucible, which attaches seed crystals; a guide ring which is located at a different position of the seed crystal holder and is formed in a ring shape in the inner circumference of the crucible to guide the raw material of the single crystal; and at least one hole formed on one side of the carbonaceous crucible wherein the location of the hole means an equation 1. In equation 1, the value of L_1 divided by L_0 is not more than 0.2, wherein L_0 is the length of the crucible and the L_1 is a distance from the upper end to the hole. COPYRIGHT KIPO 2015 ...

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Номер записи: 22
03-07-2015 дата публикации

NITRIFICATION TREATMENT METHOD OF SEED AND METHOD FOR GROWING SINGLE CRYSTAL USING SAME

Номер: KR1020150075246A
Автор: EUN, TAI HEE, PARK, NO HYUNG, YEO, IM GYU
Принадлежит:

The present invention relates to a nitrification treatment method of a seed and a method for growing single crystal using the same. Disclosed is a nitrification treatment method of a seed, which comprises: coating one side of a seed with a graphite film or glue; removing an organic material on the surface by heat treatment for the coated seed; removing oxygen by purging the seed with the organic material removed; and performing nitrification treatment for the purged seed in nitrogen atmosphere. COPYRIGHT KIPO 2015 (S10) Coating (S20) Organic matter removal through heat treatment (S30) Purge (S40) Nitrification treatment (S50) Single crystal growth ...

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Номер записи: 23
16-06-2015 дата публикации

GROWTH DEVICE FOR SiC SINGLE CRYSTAL

Номер: KR1020150066014A
Автор: KIM, JANG YUL, KIM, HEUNG RAK, LEE, SEUNG SEOK, EUN, TAI HEE, YEO, IM GYU, SEO, HAN SEOK
Принадлежит:

Provided is a growth device for SiC single crystal. According to the present invention, the growth device for SiC single crystal comprises a crucible including an inner space in which a single crystal raw material is inserted; an insulation material provided on outer surface of the crucible, and surrounding the crucible; a quartz pipe provided outside of the insulation material, and surrounding the crucible and the insulation material; and a seeded solution support attached to a seeded solution; and a heating means formed outside the quartz pipe, and heating the crucible, wherein the insulation material includes a temperature distribution control part for uniformly controlling temperature distribution inside the crucible. COPYRIGHT KIPO 2015 ...

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Номер записи: 24
08-11-2016 дата публикации

Ｐ형 탄화규소 단결정 및 이의 성장방법

Номер: KR0101673261B1
Автор: 여임규, 전명철, 박노형, 은태희
Принадлежит: 재단법인 포항산업과학연구원

P형 탄화규소 단결정 및 이의 성장방법이 개시된다. 본 발명의 일 구현예는, Al3C4 분말과 SiC 분말의 혼합 분말을 준비하는 단계; 상기 혼합 분말을 도가니의 하부에 장입시키는 단계; 상기 도가니의 상부에 SiC 종자정을 장착하는 단계; 및 상기 SiC 종자정이 장착된 도가니를 성장 온도로 승온시킨 후, 상기 도가니 내에 장입된 혼합 분말을 승화시켜 단결정을 성장시키는 단계;를 포함하고, 상기 SiC 종자정이 장착된 도가니를 성장 온도로 승온시킨 후, 상기 도가니 내에 장입된 혼합 분말을 승화시켜 단결정을 성장시키는 단계;에서, N2가스를 공급하여 결정다형을 안정화하는, P형 탄화규소 단결정 성장방법을 제공한다.

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Номер записи: 25
09-02-2017 дата публикации

P형 탄화규소 단결정 성장장치

Номер: KR0101705233B1
Автор: 은태희, 여임규, 박노형, 이승석
Принадлежит: 재단법인 포항산업과학연구원

P형 탄화규소 단결정 성장장치를 제공한다. 본 발명에 따르면, Al4C3 분말이 장입되는 내부공간이 마련된 도가니, 상기 도가니를 둘러싸는 단열재 및 석영관,상기 석영관 외부에 마련되어 상기 도가니를 가열하기 위한 가열수단, 상기 도가니 내부에 위치되어 상기 도가니의 내측면과의 사이 공간에 상기 제1 원료 분말의 승화를 유도하기 위한 유도 통로를 형성하고, 상기 제1 원료 분말과 분리시키면서 SiC 분말을 장입하기 위한 분말 받침대, 상기 도가니의 측면에 관통 형성되고, 상기 유도 통로에 Al-N2 반응을 위한 N2 가스를 주입하기 위한 개구부, 및 상기 도가니 내부 상부에 위치되고, Al4C3 분말과 SiC 분말을 결합하여 저저항의 p형 탄화규소 단결정 성장시키는 종자정을 포함한다.

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Номер записи: 26
22-08-2016 дата публикации

역 승화 단결정 성장장치

Номер: KR0101649539B1
Автор: 여임규, 은태희, 전명철, 박노형, 김장열
Принадлежит: 주식회사 포스코, 재단법인 포항산업과학연구원

... 역 승화 단결정 성장장치를 제공한다. 본 발명에 따르면, 단결정 원료 분말이 장입되는 내부공간이 마련된 도가니, 상기 도가니를 둘러싸는 단열재 및 석영관, 상기 석영관 외부에 마련되어 상기 도가니를 가열하기 위한 가열수단, 및 상기 도가니 상부에 위치되고, 소결된 원료 분말을 장입하여 고정하기 위한 환형의 분말 받침대를 포함하고, 상기 분말 받침대의 상단부에는 소결된 원료 분말을 장입하기 위한 상부 개구부가 형성되며, 상기 분말 받침대의 내측면 상부에는 소결된 원료 분말의 승화 면적을 증대하기 위한 내측 개구부가 형성된다.

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Номер записи: 27
07-07-2015 дата публикации

DEVICE AND METHOD FOR GROWING LARGE DIAMETER SINGLE CRYSTAL BY USING PHYSICAL COUPLING

Номер: KR1020150076271A
Автор: YEO, IM GYU, KIM, JANG YUL, PARK, NO HYUNG, LEE, SEUNG SEOK, EUN, TAI HEE
Принадлежит:

The present invention relates to a device and a method for growing a large diameter single crystal by using physical coupling. The device comprises: a support having a spiral helix on an outer circumferential surface thereof; a lid having a spiral helix on an inner circumferential surface thereof and screw-coupled with the support; and seed inserted between the support and the lid. COPYRIGHT KIPO 2015 ...

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Номер записи: 28
23-07-2015 дата публикации

APPARATUS AND METHOD FOR GROWING OF SILICON CARBIDE SINGLE CRYSTAL

Номер: KR0101538867B1
Автор: 은태희, 여임규, 김장열, 이승석, 박노형
Принадлежит: 주식회사 포스코, 재단법인 포항산업과학연구원

... 본 발명은 실리콘카바이드 단결정 성장 장치 및 상기 장치를 이용한 성장 방법에 관한 것으로, 내부에 실리콘카바이드 단결정 원료가 장입되는 탄소질 도가니; 도가니 내부의 상부면에 결합되며, 종자정이 부착되는 종자정 홀더; 종자정 홀더와 이격되어 형성되며, 도가니의 내주면에 환형으로 형성되여 실리콘카바이드 단결정 원료를 유도하는 가이드링; 및 탄소질 도가니의 일측에 형성된 하나 또는 그 이상의 홀을 포함하며, 상기 홀의 형성 위치는 하기 수학식 1을 만족한다. [수학식 1] L1/L0 ≤ 0.2 수학식 1에서, L0은 도가니의 높이를 의미하고, L1은 도가니 상단으로부터 홀까지의 거리를 의미한다.

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Номер записи: 29
03-07-2015 дата публикации

HYDROTREATED WAFER AND SURFACE TREATMENT METHOD THEREOF

Номер: KR1020150075176A
Автор: KIM, HEUNG RAK, SEO, HAN SEOK, LEE, SEUNG SEOK, KIM, DONG SOO, EUN, TAI HEE, YEO, IM GYU, KIM, JANG YUL
Принадлежит:

The present invention relates to a surface treatment method for maintaining a wafer surface with a constant surface state before and after an epitaxial process and, more particularly, to a hydrotreated wafer and a wafer surface treatment method which includes the step of performing a heat treatment of a high temperature under the heat treatment of a hydrogen atmosphere. COPYRIGHT KIPO 2015 ...

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Номер записи: 30
29-06-2017 дата публикации

GROWTH DEVICE FOR SILICON CARBIDE SINGLE CRYSTAL

Номер: KR1020170073834A
Автор: EUN, TAI HEE, CHUN, MYONG CHUEL, YEO, IM GYU, KIM, JANG YUL, SEO, HAN SEOK
Принадлежит:

The present invention relates to a growth device for silicon carbide (SiC) single crystal, comprising: a crucible having a raw material unit in which SiC raw materials are inserted therein; a seed crystal holder which is located on a ceiling unit of the crucible and in which SiC seed crystals are attached; an insulator surrounding the crucible and a quartz pipe; a heating means located outside of the quartz pipe and heating the crucible; and a protruding unit located on the raw material unit and protruding from the bottom. The protruding unit is made of a porous graphite material. COPYRIGHT KIPO 2017 ...

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Номер записи: 31
27-09-2017 дата публикации

탄화규소 에피 박막 성장 방법

Номер: KR0101782610B1
Автор: 서한석, 박우진, 은태희, 여임규, 김장열
Принадлежит: 재단법인 포항산업과학연구원

... 탄화규소 에피 박막 성장 방법에 관한 것으로, 화학 기상 증착법으로 탄화규소 에피 박막을 성장시키기 위한 방법으로서, 반응 장치 내에 탄화규소(SiC) 기판을 장입한 후, 상기 반응 장치 내부를 설정 온도로 승온시키는 승온 단계; 상기 승온 단계에서 상기 반응 장치 내부를 승온시키면서 행해지고, 상기 탄화규소 기판 표면을 설정 시간 동안 에칭하는 에칭 단계; 상기 에칭 단계가 끝남과 동시에 행해지고, 상기 반응 장치 내에 공정가스인 SiH4 가스와 C3H8 가스를 공급하여 상기 탄화규소(SiC) 기판에 버퍼층을 형성하는 버퍼층 형성 단계; 및 상기 버퍼층이 형성된 후, 설정 온도 및 설정 압력 하에서 공정 가스로서 SiH4 가스와 C3H8 가스를 사용하여 상기 탄화규소(SiC) 기판에 에피 박막을 성장시켜 에피층을 형성하는 에피 박막 성장 단계;를 포함하고, 상기 에피 박막 성장 단계의 C/Si 몰비 범위는, 1.1 이하인 것인, 탄화규소 에피 박막 성장 방법을 제공한다.

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Номер записи: 32
29-03-2016 дата публикации

APPARATUS FOR GROWING LARGE-DIAMETER SINGLE CRYSTAL AND METHOD FOR GROWING LARGE-DIAMETER SINGLE CRYSTAL

Номер: KR1020160033853A
Автор: YEO, IM GYU, KANG, DEOK HONG, JUN, MYONG CHUEL, EUN, TAI HEE, PARK, NO HYUNG
Принадлежит:

The present invention relates to an apparatus for growing a large-diameter single crystal and a method for growing a single crystal. The apparatus for growing a single crystal in the present invention comprises: a crucible; a coil which is installed outside the crucible and heats the crucible; a seed which is arranged at the bottom side in the crucible; and a container which is arranged on a side in the crucible and accommodates raw material powder. The apparatus for growing a large-diameter single crystal in the present invention can minimize chance of having defects and cracks in the single crystal by completely eliminating the difference in thermal expansion coefficients of a graphite support and a silicon carbide seed through avoiding attaching the silicon carbide seed to the graphite support. COPYRIGHT KIPO 2016 ...

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Номер записи: 33
08-06-2017 дата публикации

GROWTH DEVICE FOR SILICON CARBIDE SINGLE CRYSTAL

Номер: KR101744287B1
Автор: EUN, TAI HEE, CHUN, MYONG CHUEL, YEO, IM GYU, KIM, JANG YUL, SEO, HAN SEOK
Принадлежит: RESEARCH INSTITUTE OF INDUSTRIAL SCIENCE & TECHNOLOGY

The present invention relates to a growth device for silicon carbide (SiC) single crystals, comprising: a crucible in which SiC single crystal materials are inserted therein; a seed crystal holder which is located on a ceiling part of the crucible and on which SiC seed crystals are attached; an insulating material and a quartz pipe surrounding the crucible; a heating means located outside the quartz pipe and heating the crucible; and a guide separated from a seed crystal holder and located in an internal surface of the crucible. The guide is made of a porous graphite material having the density of more than or equal to 1 g/cm^3 and less than or equal to 1.4 g/cm^3. COPYRIGHT KIPO 2017 ...

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Номер записи: 34
05-07-2016 дата публикации

P-TYPE SILICON CARBIDE SINGLE CRYSTAL AND GROWING METHOD THEREOF

Номер: KR1020160078779A
Автор: YEO, IM GYU, CHUN, MYONG CHUEL, PARK, NO HYUNG, EUN, TAI HEE
Принадлежит:

Disclosed are a P-type silicon carbide single crystal and a growing method thereof. According to one embodiment of the present invention, the growing method of the P-type silicon carbide single crystal comprises the following steps of: preparing a mixed powder of Al_3C_4 powder and SiC powder; charging the mixed powder to a lower portion of a crucible; mounting a SiC seed crystal to an upper portion of the crucible; and raising a temperature of the crucible on which the SiC seed crystal is mounted to a growth temperature, and sublimating the mixed powder charged into the crucible so as to grow a single crystal. In the step of raising a temperature of the crucible on which the SiC seed crystal is mounted to a growth temperature and sublimating the mixed powder charged into the crucible so as to grow a single crystal, crystal polymorphism is stabled by supplying N_2 gas. COPYRIGHT KIPO 2016 (AA) Start (BB) End (S100) Preparing a mixed powder of Al_3C_4 powder and SiC powder (S200) Charging ...

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Номер записи: 35
10-04-2017 дата публикации

APPARATUS FOR GROWING SILICON CARBIDE SINGLE CRYSTAL

Номер: KR101724290B1
Автор: YEO, IM GYU, CHUN, MYOUNG CHUEL, PARK, NO HYUNG, EUN, TAI HEE
Принадлежит: RESEARCH INSTITUTE OF INDUSTRIAL SCIENCE & TECHNOLOGY

The present invention relates to an apparatus for growing a silicon carbide single crystal. According to a preferred embodiment of the present invention, the apparatus for growing a silicon carbide single crystal includes: a crucible body; a quartz tube for accommodating the crucible body; a first heating unit disposed at the outside of the quartz tube for applying heat to the crucible body through the quartz tube; a second heating unit disposed at the inside of the quartz tube and the outside of the crucible body for applying heat to the crucible body; a heat insulating device for surrounding an outer periphery of the crucible body; and a support frame connected to the quartz tube and disposed at the outside of the heat insulating device for supporting the crucible body and the heat insulating device, in which an outer periphery of the support frame makes contact to an outer periphery of the heat insulating device, wherein the second heating unit may be disposed at the inside of the support ...

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Номер записи: 36
04-07-2016 дата публикации

APPARATUS FOR GROWING SEMI-INSULATING SILICON CARBIDE SINGLE CRYSTALS

Номер: KR1020160077589A
Автор: YEO, IM GYU, PARK, NO HYUNG, EUN, TAI HEE, KIM, JANG YUL
Принадлежит:

Provided is an apparatus for growing semi-insulating silicon carbide single crystals, capable of solving a problem with respect to the homogenous mixing of silicon carbide and a vanadium raw powder, and vaporizing vanadium continuously and uniformly, wherein the apparatus for growing semi-insulating silicon carbide single crystals comprises: a crucible accommodating a single crystal raw material therein; a heat-insulating member surrounding the crucible; a quartz pipe disposed outside the heat-insulating member; and a heating unit provided outside the quartz pipe to heat the crucible. Here, the crucible comprises: an upper crucible, which is disposed relatively above and having the top end for mounting a seed solution thereon; a lower crucible, which is separated from the upper crucible and disposed below the upper crucible, wherein raw materials are separately accommodated in the upper crucible and the lower crucible; and an induction unit for inducing the material, which is evaporated ...

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Номер записи: 37
04-07-2018 дата публикации

LARGE-DIAMETER SINGLE CRYSTAL GROWING APPARATUS

Номер: KR1020180074847A
Автор: YEO, IM GYU, CHUN, MYONG CHUEL, KIM, JANG YUL, EUN, TAI HEE, SEO, HAN SEOK
Принадлежит:

Provided is a large-diameter single crystal growing apparatus capable of effectively discharging heat from an upper part of a crucible. According to the present invention, the large-diameter single crystal growing apparatus comprises: a crucible receiving a raw material of a single crystal therein; an insulation material installed to surround the crucible and having an inlet and an outlet formed at the center of a bottom and a top; a seed crystal holder disposed on the top of the crucible and having the seed crystal attached thereto; a quartz pipe disposed outside the insulation material; a heating means disposed outside the quartz pipe to heat the crucible; a space part formed between the insulation material and the top of the crucible over the seed crystal holder; and a guide unit installed in the space part guiding and discharging heat inside the space part to the outside of the insulation material. COPYRIGHT KIPO 2018 ...

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Номер записи: 38
04-07-2016 дата публикации

GROWING APPARATUS FOR P-TYPE SILICON CARBIDE SINGLE CRYSTAL

Номер: KR1020160077584A
Автор: EUN, TAI HEE, YEO, IM GYU, PARK, NO HYUNG, LEE, SEUNG SEOK
Принадлежит:

The present invention provides a growing apparatus for a P-type silicon carbide single crystal. According to the present invention, the growing apparatus for a P-type silicon carbide single crystal comprises: a furnace formed with an inner space to which Al_3C_4 powders are charged; a heat insulating material and quartz tube for surrounding the furnace; a heating means disposed on the outside of the quartz tube and configured to heat the furnace; a powder holder disposed in the furnace to form an induction path for inducing a first raw material powder to sublimate in a space between the powder holder and an inner surface of the furnace, and configured to charge a SiC powder thereto while separating the SiC powder from the first raw material powder; an opening formed by passing through a side surface of the furnace, and configured to inject N_2 gas to the induction path for Al-N_2 reaction; and a seed disposed on an upper portion in the furnace, and growing a P-type silicon carbide single ...

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Номер записи: 39
08-09-2016 дата публикации

반절연 탄화규소 단결정 성장장치

Номер: KR0101655242B1
Автор: 여임규, 박노형, 은태희, 김장열
Принадлежит: 재단법인 포항산업과학연구원

... 탄화규소와 바나듐 원료분말의 균일 혼합 문제를 해소할 수 있고, 바나듐이 균일하게 지속적으로 승화할 수 있도록, 내부에 단결정 원료가 수용되는 도가니, 상기 도가니를 둘러싸는 단열재, 상기 단열재의 외부에 배치되는 석영관, 및 상기 석영관의 외부에 마련되어 도가니를 가열하는 가열수단을 포함하고, 상기 도가니는 상대적으로 위쪽에 배치되며 상단에 종자정이 장착되는 상부도가니, 상기 상부도가니와 분리되어 상부도가니 하부에 배치되는 하부도가니를 포함하여 상부도가니와 하부도가니에 각각 원료를 분리 수용하며, 상기 하부도가니 내부의 원료에서 승화된 물질을 상부도가니로 유도하는 유도부를 포함하는 반절연 탄화규소 단결정 성장장치를 제공한다.

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Номер записи: 40
24-05-2016 дата публикации

DEVICE FOR GROWING LARGE DIAMETER SINGLE CRYSTAL

Номер: KR1020160057584A
Автор: EUN, TAI HEE, YEO, IM GYU, PARK, NO HYUNG
Принадлежит:

The present invention provides a device for growing a large diameter single crystal that improves the quality of a large diameter silicon carbide single crystal by minimizing a temperature difference between an outside and a center of a furnace and thus reducing the temperature difference between the outside and the center of a seed and a single crystal ingot, the device including a furnace in which a single crystal material is accommodated, an insulation material surrounding the furnace and having an inlet and an outlet at the centers of a lower end and an upper end thereof, a seed holder coupled to an upper end of the furnace and to which a seed is attached, a quartz tube arranged outside the insulation material, a heating unit provided outside the quartz tube to heat the furnace, and a space formed at an outer upper end of the seed holder to generate a convection phenomenon and thus uniformly apply heat to the seed through the seed holder. COPYRIGHT KIPO 2016 ...

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Номер записи: 41
30-07-2015 дата публикации

SEMI INSULATING SiC SINGLE CRYSTAL, GROWING METHOD FOR THE SAME AND APPARATUS FOR GROWING THE SAME

Номер: KR0101540377B1
Автор: 이승석, 박종휘, 은태희, 여임규, 이원재, 김장열
Принадлежит: 주식회사 포스코, 재단법인 포항산업과학연구원

... 본 발명은 반절연 SiC 단결정 성장방법 및 이에 의해 제조되는 SiC 단결정에 관한 것으로, SiC 원료물질이 장입되는 도가니, 종자정이 부착되는 종자정 홀더, 도가니를 가열하는 가열수단을 포함하는 성장장치를 이용하여 상기 원료물질을 승화시켜 단결정을 성장시키는 반절연 SiC 단결정 성장방법에 있어서, 서로 면이 다른 SiC 종자정을 준비하는 단계; 상기 SiC 종자정을 종자정 홀더에 부착하는 단계; 상기 도가니 내부에 SiC 원료물질을 장입하는 단계; 및 상기 가열수단으로 상기 도가니를 가열함으로써 상기 원료물질을 승화시켜 상기 SiC 종자정을 성장시키는 단계; 를 포함하는 반절연 SiC 단결정 성장방법, 이에 의해 제조되는 SiC 단결정 및 이를 성장시키는 성장장치가 개시된다.

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Номер записи: 42
16-06-2015 дата публикации

METHOD FOR GROWING SINGLE CRYSTAL OF SILICON CARBIDE

Номер: KR1020150066016A
Автор: YEO, IM GYU, KIM, HEUNG RAK, LEE, SEUNG SEOK, EUN, TAI HEE, KIM, JANG YUL, SEO, HAN SEOK
Принадлежит:

In the present invention, provided is a method for growing single crystal of silicon carbide, which uses an apparatus for growing single crystal of silicon carbide, having crucible, seed crystal, seed crystal rack and a heating tool, and comprises: a raw material charging step of charging raw materials in the crucible; a seed crystal attachment step of attaching the seed crystal to the seed crystal rack with use of adhesives; a seed crystal rack installation step of inserting the seed crystal attachment rack with attached seed crystal in the apparatus for growing single crystal of silicon carbide, and enabling the same to be attached to the inside of the crucible; a single crystal growth step of heating the crucible at a growth temperature with use of the heating tool and sublimating the charged raw materials, leading to single crystal growth; and a suppressing gas supplying step of supplying suppressing gas to react with raw materials in the crucible having excess silicon when growing ...

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Номер записи: 43
16-10-2018 дата публикации

대구경 단결정 성장장치

Номер: KR0101908043B1
Автор: 여임규, 전명철, 김장열, 은태희, 서한석
Принадлежит: 주식회사 포스코, 재단법인 포항산업과학연구원

... 도가니 상부에서 열을 효과적으로 외부로 배출할 수 있도록, 내부에 단결정 원료가 수용되는 도가니와, 상기 도가니를 둘러싸며 설치되고 하단과 상단 중심에 유입구와 유출구가 형성된 단열재, 상기 도가니의 상단에 마련되어 종자정이 부착되는 종자정 홀더, 상기 단열재의 외부에 배치되는 석영관, 상기 석영관의 외부에 마련되어 도가니를 가열하는 가열수단, 상기 단열재와 상기 종자정 홀더 위쪽 도가니 상단 사이에 형성되는 공간부, 상기 공간부에 설치되어 공간부내의 열을 단열재 외측으로 유도하여 배출시키는 유도부를 포함하는 대구경 단결정 성장장치를 제공한다.

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Номер записи: 44
16-06-2016 дата публикации

REVERSE SUBLIMATION APPARATUS FOR GROWING SINGLE CRYSTAL

Номер: KR1020160069094A
Автор: YEO, IM GYU, LEE, SEUNG SEOK, CHUN, MYONG CHUEL, PARK, NO HYUNG, EUN, TAI HEE
Принадлежит:

Provided is a reverse sublimation apparatus for growing single crystal. According to the present invention, the reverse sublimation apparatus for growing single crystal comprises: a crucible having an internal space to which a raw powder of single crystal is inserted; an insulator and a quarts pipe surrounding the crucible; a heating means arranged on the outside of the quarts pipe to heat the crucible; a crystal seed positioned inside the crucible, and growing the raw powder into single crystal; and a guiding part formed on the outside of the crystal seed to prevent generation of polycrystals on the bottom face or the inner circumference of the crucible by inducing gas discharge to the bottom of the crucible. The reverse sublimation apparatus can grow large-diameter single crystal which does not have invasion of polycrystals and defects. COPYRIGHT KIPO 2016 ...

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Номер записи: 45
10-04-2017 дата публикации

APPARATUS FOR GROWING SILICON CARBIDE SINGLE CRYSTAL USING METHOD OF REVERSE PHYSICAL VAPOR TRANSPORT

Номер: KR101724291B1
Автор: YEO, IM GYU, CHUN, MYONG CHUEL, PARK, WOO JIN, EUN, TAI HEE, KIM, JANG YUL, SEO, HAN SEOK
Принадлежит: RESEARCH INSTITUTE OF INDUSTRIAL SCIENCE & TECHNOLOGY

The present invention relates to an apparatus for growing a silicon carbide single crystal using a method of reverse physical vapor transport (PVT). According to a preferred embodiment of the present invention, the apparatus for growing a silicon carbide single crystal using a method of reverse PVT includes: a crucible body having a plurality of walls for accommodating a seed crystal in a lower portion of an inner space formed by the plurality of walls; a quartz tube for accommodating the crucible body; a heating device disposed outside the quartz tube for applying heat; and porous graphite provided inside the wall of the crucible body for surrounding the region where the seed crystals are arranged in the crucible body. The wall of the crucible body includes a guide slope unit slantingly provided at one surface facing the seed crystal for surrounding the seed crystal. The guide slope unit includes: an inner wall disposed in the accommodation space of the crucible body and facing the seed ...

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Номер записи: 46
23-06-2017 дата публикации

SILICON CARBIDE EPITAXIAL FILM GROWTH METHOD

Номер: KR1020170071324A
Автор: SEO, HAN SEOK, PARK, WOO JIN, EUN, TAI HEE, YEO, IM GYU, KIM, JANG YUL
Принадлежит:

The present invention relates to a silicon carbide epitaxial film growth method and, more specifically, relates to a method to grow a silicon carbide epitaxial film through chemical vapor deposition. The method includes: a temperature rising step of inserting a silicon carbide (SiC) substrate into a reactive device, and then, increasing the temperature of the reactive device to a set temperature; an etching step of etching the surface of the silicon carbide substrate while increasing the temperature of the reactive device at the temperature rising step; a buffer layer forming step of forming a buffer layer on the silicon carbide (SiC) substrate by supplying SiH4 gas and C3H8 gas into the reactive device right after the etching step; and an epitaxial film growth step of forming an epitaxial layer by growing an epitaxial film on the silicon carbide (SiC) substrate by using the SiH4 gas and the C3H8 gas as process gas at a set temperature and set pressure after the formation of the buffer ...

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Номер записи: 47
08-12-2017 дата публикации

METHOD FOR MANUFACTURING SiC SUBSTRATE

Номер: KR101807166B1
Автор: KIM, JANG YUL, PARK, WOO JIN, EUN, TAI HEE, YEO, IM GYU, SEO, HAN SEOK
Принадлежит: RESEARCH INSTITUTE OF INDUSTRIAL SCIENCE & TECHNOLOGY

To minimize a mechanical defect such as scratches through an improved CMP process, improve surface roughness, and minimize a defect rate in a subsequent process, the present invention provides a method for manufacturing an SiC substrate. The method comprises: a substrate optical polishing step (S1) of forming an oxide film on the surface of a substrate before performing a CMP process, which is chemical mechanical polishing, on a substrate; an oxide film removing step (S2) of removing the oxide film of the substrate by performing a CMP process on the substrate; a substrate crystal direction determining and polishing step (S3) of attaching at least one substrate having a set crystal direction to control the attachment direction of the substrate to a ceramic plate of a polishing device for performing CMP processing, and polishing the substrate through the CMP processing; and a substrate cleaning step (S4) of separating the substrate from the ceramic plate after the CMP processing is finished ...

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Номер записи: 48
17-09-2015 дата публикации

QUARTZ FOR SINGLE CRYSTAL GROWER

Номер: KR0101553385B1
Автор: 이승석, 이원재, 은태희, 여임규
Принадлежит: 재단법인 포항산업과학연구원

... 단결정 성장 도가니가 개시된다. 단결정 성장 도가니는, 원료 물질이 장입되는 내부 공간이 형성되는 도가니 본체와, 도가니 본체의 내부 공간을 밀폐하도록 설치되는 커버부재와, 커버부재에 설치되며 도가니 본체의 내부 공간으로 돌출되며 단결정 성장을 위한 종자정이 부착되는 종자정 홀더부재와, 도가니 본체를 가열 하도록 설치되는 가열기를 포함한다. 종자정 홀더부재는, 커버부재에 접촉 고정되는 제1 측부와 제1 측부에 대향되며 종자정이 부착되는 제2 측부를 포함하고, 제1 측부와 커버부재의 접촉 면적은, 종자정과 제2 측부의 접촉 면적보다 작은 면적으로 형성될 수 있다.

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Номер записи: 49