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Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Применить Всего найдено 14. Отображено 14.
27-03-2017 дата публикации

태양 전지 및 그 제조 방법

Номер: KR0101715386B1
Принадлежит: 엘지전자 주식회사

... 본 발명은 태양 전지에 관한 것이다. 이러한 태양 전지의 한 예는 제1 도전성 타입을 갖는 기판, 상기 제1 도전성 타입과 반대인 제2 도전성 타입을 갖고 상기 기판의 제1 면에 위치하는 에미터부, 상기 에미터부 위에 위치하고 제올라이트(zeolite)로 이루어진 반사 방지막을 구비한 반사 방지부, 상기 에미터부에 연결되어 있는 제1 전극, 그리고 상기 제1 면의 반대편에 위치하는 상기 기판의 제2 면 위에 위치하고 상기 기판과 연결되어 있는 제2 전극을 포함한다. 이로 이해, 다공성 구조를 갖는 제올라이트로 이루어진 반사 방지막에 의해 기판의 표면에 존재하는 불순물이 포획되어 불순물에 의한 전하의 손실량이 감소한다.

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25-04-2018 дата публикации

METHOD FOR MANUFACTURING SOLAR CELL

Номер: KR1020180042104A
Принадлежит:

The present invention relates to a method for manufacturing a solar cell. According to an embodiment of the present invention, the method for manufacturing a solar cell by forming a conductive region on one surface of a semiconductor substrate includes: an impurity implanting step of implanting a metal-based impurity with a dopant, which is an impurity to form the conductive region, into one surface of the semiconductor substrate; an oxide film forming step of forming a silicon oxide (SiO_x) film on one side of the semiconductor substrate; a gettering step of absorbing the metal-based impurity in the silicon oxide film; and an oxide film removing step of removing the silicon oxide film in which the metal-based impurity is absorbed. Accordingly, the present invention can reduce manufacturing costs. COPYRIGHT KIPO 2018 (S1) Impurity implanting step (S2) Oxide film forming step (S3) Gettering step (S4) Oxide film removing step (S5) Heat treatment step ...

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02-03-2018 дата публикации

태양 전지 및 그 제조 방법

Номер: KR0101833936B1
Принадлежит: 엘지전자 주식회사

... 본 발명은 태양 전지의 제조 방법에 관한 것이다. 태양 전지의 제조 방법의 한 예는 제1 도전성 타입을 갖는 기판의 제1 면에 제1 도전성 타입과 다른 제2 도전성 타입을 갖는 불순물 이온을 주입하여 불순물부를 형성하는 단계, 상기 불순물부 위에, 본체, 상기 본체에 형성된 개구부 및 상기 개구부 주변의 본체에 위치하고 전압을 인가받는 전극을 구비한 마스크를 위치시키는 단계, 상기 제2 도전성 타입을 갖는 상기 불순물 이온을 상기 마스크 위에 주입하여, 상기 본체의 하부에 위치한 상기 불순물부의 부분에 제1 불순물 부분을 형성하고, 상기 개구부를 통해 드러난 상기 불순물부의 부분에 상기 제1 불순물 부분보다 높은 불순물 주입 농도를 갖는 제2 불순물 부분을 형성하는 단계, 상기 제1 및 제2 불순물 부분을 구비한 기판을 열처리하여, 상기 제1 불순물 부분을 제1 에미터 부분으로 형성하여 상기 제2 불순물 부분을 상기 제1 에미터 부분보다 작은 면저항값을 갖는 제2 에미터 부분으로 형성하는 단계, 그리고 상기 기판의 상기 제1 면에 위치하고 상기 제2 에미터 부분과 연결되는 제1 전극과 상기 기판의 상기 제1 면의 반대편에 위치하고 상기 기판의 제2 면에 위치하고 상기 기판과 연결되는 제2 전극을 형성하는 단계를 포함한다.

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22-08-2018 дата публикации

선택적 에미터를 갖는 태양전지 및 이의 제조 방법

Номер: KR0101890282B1
Принадлежит: 엘지전자 주식회사

... 본 발명의 실시예에 따른 태양전지는 기판; 기판의 제1 면에 위치하며, 이온 주입된 제2 도전성 타입의 불순물을 포함하는 선택적 에미터부; 및 선택적 에미터부와 연결되는 제1 전극부를 포함하며, 선택적 에미터부는 제1 두께를 갖는 제1 에미터부 및 상기 제1 두께보다 얇은 제2 두께를 갖는 제2 에미터부를 포함하고, 제1 전극부는 제2 에미터부와 접촉한다.

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12-08-2015 дата публикации

METHOD FOR PRODUCING SOLAR CELL

Номер: KR1020150091818A
Принадлежит:

The present invention relates to a method for producing a solar cell according to an embodiment of the present invention. The method comprises the steps of: forming a conductive region on a semiconductor substrate; and forming an electrode electrically connected to the conductive region. The step of forming the conductive region includes the steps of forming a dopant layer by performing ion injection of a dopant into the semiconductor substrate; and washing the semiconductor substrate by using a washing solution. The washing solution includes hydrofluoric acid (HF) and hydrochloric acid (HCl). COPYRIGHT KIPO 2015 (ST10) Step of forming a conductive region (ST12) Step of forming a dopant layer (ST14) Step of washing the same (ST16) Step of performing activation heating (ST20) Step of forming an insulation layer (ST30) Step of forming an electrode ...

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26-07-2016 дата публикации

PHOTOVOLTAIC CELL MANUFACTURING METHOD

Номер: KR1020160088610A
Принадлежит:

An embodiment of the present invention relates to a photovoltaic cell manufacturing method comprising: a conductive area forming step for forming a first conductive area on one side of a semiconductor board and a second conductive area on the other side of the semiconductor board; and an electrode forming step including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area. In the conductive area forming step, the conductive area is formed by being heat-treated after forming a dopant layer including a first conductive dopant on one side of the semiconductor board, and the second conductive area is formed by performing ion injection of a second conductive dopant on the other side of the semiconductor board. Thereby, necessary processes can be simplified. COPYRIGHT KIPO 2016 ...

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27-04-2018 дата публикации

SOLAR CELL AND MANUFACTURING METHOD THEREOF

Номер: KR1020180043150A
Принадлежит:

The present invention relates to a solar cell and a manufacturing method thereof. According to an embodiment of the present invention, the solar cell comprises: a semiconductor substrate; a first conductive region which is located on the front surface of the semiconductor substrate; a control passivation film, a second conductive region, and a rear surface passivation film which are located on the rear surface of the semiconductor substrate; a first electrode which is connected to the first conductive region; and a second electrode which is connected to the second conductive region. The control passivation film and the second conductive region are not located on the edge of the rear surface of the semiconductor substrate, and an isolation part in which the rear surface passivation film covers the edge of the rear surface of the semiconductor substrate is positioned. A plurality of first concave and convex parts and a plurality of second concave and convex parts are formed on the front surface ...

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08-12-2017 дата публикации

태양 전지 및 그 제조 방법

Номер: KR0101806967B1
Принадлежит: 엘지전자 주식회사

... 본 발명은 태양 전지 제조 방법에 관한 것이다. 본 발명에 따른 태양 전지 제조 방법의 일례는 제1 도전성 타입의 불순물을 함유한 반도체 기판의 일면 전체에 제2 도전성 타입의 불순물을 주입하는 단계; 반도체 기판의 일면과 측면의 전체면 및 반도체 기판의 반대면 가장 자리까지 도핑 방지막을 형성하는 단계; 반도체 기판의 반대면에 고농도로 제1 도전성 타입의 불순물을 주입하는 단계; 반도체 기판을 열처리하여, 반도체 기판에 제2 도전성 타입의 에미터부와 제1 도전성 타입의 후면 전계부를 동시에 형성하는 열처리 단계; 및 도핑 방지막을 제거하는 세정 단계;를 포함한다. 이와 같이 제조된 본 발명의 일례에 따른 태양 전지에서 에미터부는 반도체 기판의 측면에 더 위치하되, 반도체 기판의 반대면 가장 자리 측면까지 위치하고, 후면 전계부는 반도체 기판의 반대면 가장 자리에 위치한 에미터부로부터 이격된다.

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22-02-2017 дата публикации

SOLAR CELL AND MANUFACTURING METHOD THEREOF

Номер: KR1020170020297A
Принадлежит:

The present invention relates to a solar cell and a manufacturing method thereof. According to one embodiment of the present invention, the method comprises the following steps: injecting a second conductive type impurity into the whole one surface of a semiconductor substrate containing a first conductive type impurity; forming a doping prevention film on the whole surface of one surface and side surfaces of the semiconductor substrate, and up to an edge of the opposite surface of the semiconductor substrate; injecting the first conductive type impurity with a high concentration into the opposite surface of the semiconductor substrate; thermally treating the semiconductor substrate to form a second conductive type emitter part and a first conductive type rear surface electric field part in the semiconductor substrate at the same time; and removing the doping prevention film. In the solar cell according to one embodiment of the present invention, the emitter part is further located on the ...

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17-06-2016 дата публикации

METHOD FOR MANUFACTURING SOLAR CELL

Номер: KR101631444B1
Автор: YI, MANN, KIM, JIN SUNG
Принадлежит: LG ELECTRONICS INC.

Provided is a method for manufacturing a solar cell capable of reducing the manufacturing costs of the solar cell while increasing properties and efficiency of the solar cell. According to an embodiment of the present invention, the method for manufacturing a solar cell comprises the following steps: preparing a semiconductor substrate; forming a conductive area by doping a dopant on the semiconductor substrate; and removing an impurity in the conductive area. The step of removing the impurity includes a chemical gettering process using chemical gettering. COPYRIGHT KIPO 2016 (ST10) Step for preparing a semiconductor substrate (ST20) Step to form a conductive area (ST31) Chemical gathering process (ST40) Step for activation heating process (ST50) Step of forming an insulator film (ST60) Step for forming electrodes ...

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06-12-2017 дата публикации

SOLAR CELL AND MANUFACTURING METHOD THEREOF

Номер: KR1020170134293A
Принадлежит:

The present invention relates to a manufacturing method of a solar cell, comprising the following steps of: forming an impurity part by injecting an impurity ion having a second conductive type different from a first conductive type to a first surface of a substrate having the first conductive type; arranging a mask including a main body, an opening part formed in the main body, and an electrode located on the main body around the opening part and applied with a voltage on the impurity part; injecting the impurity ion having the second conductive type onto the mask to form a first impurity part on a part of the impurity part located on a lower portion of the main body and a second impurity part having a higher impurity injection concentration than the first impurity part on a part of the impurity part exposed through the opening part; thermally processing the substrate having the first and second impurity parts to form the first impurity part as a first emitter part such that the second ...

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12-12-2016 дата публикации

METHOD FOR MANUFACTURING SOLAR CELL

Номер: KR1020160142169A
Принадлежит:

A method for manufacturing a solar cell according to an embodiment of the present invention comprises the steps of: forming a first conductive region by doping a first conductive dopant on one surface of a semiconductor substrate including a crystalline semiconductor material; and forming a first electrode positioned on one surface of the semiconductor substrate and connected to the first conductive region and a second electrode positioned on the other surface of the semiconductor substrate. The step of forming the first conductive region includes: an ion injection step of forming a first doping part by performing partial ion-injection of the first conductive dopant on one surface of the semiconductor substrate; a deposition step of forming a first dopant layer including the first conductive dopant on the entire one surface of the semiconductor substrate by deposition; and a heat treatment step of heat-treating the semiconductor substrate to perform activate heat treatment of the first ...

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09-01-2017 дата публикации

METHOD OF MANUFACTURING SOLAR CELL

Номер: KR1020170003511A
Принадлежит:

The present invention relates to a method of manufacturing a solar cell. The method of manufacturing a solar cell includes the steps of: forming an emitter layer on a silicon semiconductor substrate having a first conductive type; forming an antireflection film on the emitter layer; and forming a front electrode and a rear electrode on a front surface and a rear surface of a substrate, wherein the step of forming the emitter layer includes the steps of: a first doping step of doping first impurities having a second conductive type opposite to the first conductive type on the substrate; a step of etching a surface of the substrate; and a second doping step of doping second impurities having the second conductive type on the substrate. Thus, impurities are effectively removed from the silicon semiconductor substrate and the emitter layer so that the qualities of the silicon semiconductor and the emitter layer may be improved, thereby increasing a life time of a carrier. COPYRIGHT KIPO 2017 ...

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22-02-2017 дата публикации

SOLAR CELL AND MANUFACTURING METHOD THEREOF

Номер: KR1020170019597A
Принадлежит:

The present invention relates to a solar cell and a method of manufacturing the same. According to an embodiment of the present invention, the method of manufacturing the solar cell includes the steps of: injecting second conductive type impurities into an entire first surface of a semiconductor substrate containing first conductive type impurities; forming a doping barrier layer on the entire first surface and the entire side surface of the semiconductor substrate, and at an edge portion of the second surface of the semiconductor substrate; injecting the first conductive type impurities into the second surface of the semiconductor substrate at a higher concentration; performing a thermal process on the semiconductor substrate to simultaneously form a second conductive type emitter region and a first conductive type rear surface electric field region at the semiconductor substrate; and removing the doping barrier layer. In the solar cell according to an embodiment of the present invention ...

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