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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 28. Отображено 28.
08-07-2016 дата публикации

NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020160081376A
Автор: CHUNG, TAE HOON, BEAK, JONG HYEOB, LEE, SANG HERN, JEON, SEONG RAN, JEONG, TAK, OH, HWA SUB, LEE, SEUNG JAE, JU, JIN WOO, JUNG, SUNG HOON, LEE, KWANG JAE, MIN, PAN KI
Принадлежит:

Disclosed is a nitride semiconductor light emitting device. In the present invention, an insertion layer made of AlN or AlGaN is disposed in the lower part of a defect relaxation layer or inside the defect relaxation layer to block the progression of a crystal defect. The nitride semiconductor light emitting device includes: a buffer layer of the upper portion of a substrate; a nitride semiconductor layer disposed in the upper portion of the buffer layer and growing at a predetermined first temperature; the defect relaxation layer disposed between the buffer layer and the nitride semiconductor layer to block the progression of the crystal defect; and the insertion layer disposed between the buffer layer and the defect relaxation layer to block the progression of the crystal defect. COPYRIGHT KIPO 2016 ...

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Номер записи: 1
13-09-2016 дата публикации

OPTICAL SIGHT

Номер: KR1020160106961A
Автор: OH, HWA SUB, LEE, SEUNG JAE, CHUNG, TAE HOON, JUNG, SUNG HOON, SONG, YOUNG HO, JEON, SEONG RAN, BAEK, JONG HYEOB
Принадлежит:

An objective of the present invention is to provide an optical sight which aligns a path of light of an arbitrary light emitting wavelength emitted from a light source unit in parallel rays to reflect the parallel rays to reduce parallax. To achieve the objective, the optical sight comprises: a housing; a main tube installed on the housing; a light source unit installed on the inside of the main tube to emit light; an optical lens unit installed and separated from the light source unit to convert the light emitted from the light source unit into parallel rays; and a reflection unit to reflect the parallel rays converted by the optical lens unit to a different path. Therefore, the present invention aligns the path of the light of an arbitrary light emitting wavelength emitted from the light source unit in parallel rays to reflect the parallel rays to reduce parallax to efficiently and stably aim at a target. COPYRIGHT KIPO 2016 ...

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Номер записи: 2
22-09-2011 дата публикации

MULTI-LUMINOUS ELEMENT AND METHOD FOR MANUFACTURING SAME

Номер: WO2011115414A3
Автор: JEON, Seong Ran, KIM, Jae Bum, LEE, Seung Jae
Принадлежит:

The present invention relates to a multi-luminous element and a method for manufacturing the same. The present invention provides the multi-luminous element comprising: a buffer layer disposed on a substrate; a first type semiconductor layer disposed on the buffer layer; a first active layer which is disposed on the first type semiconductor layer and is patterned to expose a part of the first type semiconductor layer; a second active layer disposed on the first type semiconductor layer which is exposed by the first active layer; and a second type semiconductor layer disposed on the first active layer and the second active layer, the first and second active layers being repeatedly disposed in the horizontal direction, and the method for manufacturing the same. The multi-luminous element according to the present invention reduces loss of light emitting efficiency and can generate multi-wavelength light by repeatedly disposing the first and second active layers in the horizontal direction.

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Номер записи: 3
02-10-2018 дата публикации

PORTABLE APPARATUS, SYSTEM AND METHOD FOR DIAGNOSING AND TREATING SKIN CONDITIONS

Номер: KR1020180107428A
Автор: JEON, SEONG RAN, SONG, YOUNG HO
Принадлежит:

The present invention relates to a portable apparatus, system and method for diagnosing and treating skin conditions. The present invention is portable and can be used to diagnose and treat skin conditions by using an LED light source. The apparatus for diagnosing and treating skin conditions emits diagnostic light to skin through an LED light source part and obtains a skin image formed by a camera par for photographing the state of the skin to which the diagnostic light is emitted. The apparatus for diagnosing and treating skin conditions diagnoses a skin condition with the obtained skin image, and treats the skin by emitting treatment light through the LED light part to a skin region requiring treatment according to the diagnosis result. COPYRIGHT KIPO 2018 (10) Portable apparatus for diagnosing and treating skin conditions (17) Camera part (23) LED light source part (50) Communication network (60) Diagnostic apparatus ...

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Номер записи: 4
12-04-2012 дата публикации

NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR2012046955A2
Автор: JEON, Seong Ran, SONG, Young Ho, KIM, Jae Bum, KIM, Young Woo, CHEON, Woo Young, KIM, Jin Hong
Принадлежит:

The present invention relates to a nitride based semiconductor light emitting device, and more particularly, to a nitride based semiconductor light emitting device with improved luminescence efficiency by increasing a recombination rate of electrons and holes contributing to luminescence, which results from matching the spatial distribution of electron and hole wave functions. The nitride based semiconductor light emitting device according to the present invention includes an n-type nitride layer, an active layer formed on the n-type nitride layer, and a p-type nitride layer formed on the active layer. At this stage, a strain control layer is formed from at least one layer in the active layer, and the at least one layer has a larger energy bandgap than a quantum well layer in the active layer. The strain control layer is disposed in an area where the quantum well layer of the active layer is formed. Moreover, an energy bandgap of the strain control layer is less than that of a quantum barrier ...

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Номер записи: 5
02-06-2017 дата публикации

UV LED MODULE

Номер: KR1020170060643A
Автор: JEON, SEONG RAN, SONG, YOUNG HO
Принадлежит:

The present invention relates to an ultraviolet (UV) LED module. The UV LED module includes: an LED chip mounted on a COB-type substrate and outputting ultraviolet LED light; a reflecting cup ring mounted on the COB-type substrate to surround the LED chip, having a ring shape, and a jaw protruding toward the interior of the ring shape; and a quartz lens coupled to the reflecting cup ring, disposed separate from the LED chip formed on the COB-type substrate, and transmitting the ultraviolet LED light output from the LED chip. As a result, the UV LED module has a structure in which the LED chip outputting the ultraviolet LED light is mounted on the COB-type substrate, the reflecting cup ring is mounted on the COB-type substrate, and the quartz lens is coupled to the reflecting cup ring, and accordingly, enables the UV LED light output from the LED chip to be output with excellent output intensity and uniformity through the quartz lens. In addition, the distance between the quartz lens and ...

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Номер записи: 6
19-12-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

Номер: KR1020160144520A
Автор: CHUNG, TAE HOON, BAEK, JONG HYEOB, JEON, SEONG RAN, JUNG, SUNG HOON, OH, HWA SUB, LEE, SEUNG JAE, SONG, YOUNG HO, MIN, PAN KI, LEE, KWANG JAE
Принадлежит:

The present invention provides a semiconductor light emitting device and a method for manufacturing the same. According to the present invention, the method for manufacturing the semiconductor light emitting device includes: a step of forming a first nitride semiconductor layer on a substrate; a step of forming a second nitride semiconductor layer on the first nitride semiconductor layer; a step of forming a V-pit layer on the second nitride semiconductor layer; a step of forming an active layer on the V-pit layer; and a step of forming a third nitride semiconductor layer on the active layer. The present invention reduces driving current loss of the light emitting device and improves the efficiency of light extraction. COPYRIGHT KIPO 2016 (S210) Forming an n-type nitride semiconductor layer on a substrate (S220) Forming a V-pit layer (S230) Forming an active layer (S240) Forming a p-type nitride semiconductor layer ...

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Номер записи: 7
09-06-2017 дата публикации

METHOD FOR MANUFACTURING LED MODULE INCLUDING TRANSPARENT FILM

Номер: KR101745263B1
Автор: OH, HWA SUB, LEE, SEUNG JAE, CHUNG, TAE HOON, JUNG, SUNG HOON, SONG, YOUNG HO, JEON, SEONG RAN, BEAK, JONG HYEOB
Принадлежит: KOREA PHOTONICS TECHNOLOGY INSTITUTE

The present invention relates to an LED module including a transparent film capable of improving miniaturization and a manufacturing process by forming a flip chip structure, and improving light extraction efficiency by improving a refractive index with air, and to a method for manufacturing the same. The method for manufacturing an LED module including a transparent film comprises: a) step of forming an epitaxial structure including a first semiconductor layer, an active layer, and a second semiconductor layer on a growth substrate, and forming a first electrode and a second electrode on the epitaxial structure; b) step of forming a reflective metal layer which reflects a light emitting spectrum to the epitaxial structure, and a first bonding pad and a second bonding pad to form a flip chip bonding pad; c) step of attaching a support substrate on the epitaxial structure, the first bonding pad, and the second bonding pad, and of separating the growth substrate from the epitaxial structure ...

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Номер записи: 8
27-06-2018 дата публикации

WAVELENGTH TUNABLE LED DEVICE WITH HEATING STRUCTURE AND METHOD FOR MANUFACTURING SAME

Номер: KR1020180071185A
Автор: JEON SEONG RAN, SONG YOUNG HO, OH HWA SUB, JUNG SUNG HOON
Принадлежит:

The present invention discloses a wavelength variable LED element having a heater structure capable of outputting various wavelengths and a method of manufacturing the same. In a multi-wavelength light emitting diode (LED) light source using a group III-V compound semiconductor, in particular, a GaAs-based compound semiconductor having a small energy band gap, a heating electrode is installed so that temperature can be controlled. So, it is possible to output various wavelengths from one light source through wavelength tuning according to temperature change. COPYRIGHT KIPO 2018 ...

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Номер записи: 9
27-06-2018 дата публикации

WAVELENGTH VARIABLE LED LIGHT SOURCE AND LIGHT IRRADIATION DEVICE USING SAME

Номер: KR1020180071080A
Автор: JEON, SEONG RAN, SONG, YOUNG HO, CHUNG, TAE HOON
Принадлежит:

The present invention provides a wavelength variable LED light source capable of outputting a wide range of wavelength with one light source, and a light irradiation device using the same. To this end, the wavelength variable LED light source forms a wavelength variable layer which outputs light having a wavelength different from an active layer between the active layer and a second semiconductor layer, in a light emitting element in which a substrate, a first semiconductor layer, the active layer and the second semiconductor layer are sequentially laminated and formed. Therefore, the present invention can output the wide range of wavelength with one light source. COPYRIGHT KIPO 2018 ...

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Номер записи: 10
21-01-2019 дата публикации

외부 캐버티를 갖는 단일 광자 소스 방출 장치

Номер: KR0101940748B1
Автор: 전성란, 송영호
Принадлежит: 한국광기술원

... 본 발명은 외부 캐버티를 갖는 단일 광자 소스 방출 장치에 관한 것으로, 외부 캐버티에 형성된 단일 양자점을 통하여 단일 광자 소스를 방출하기 위한 것이다. 본 발명은 상온에서의 전원 공급에 의해 상부면으로 광을 출력하는 외부 캐버티 구조의 발광 소자; 및 발광 소자의 상부면에 형성되며 발광 소자에서 방출되는 광에 의해 여기되어 단일 광자 소스를 방출하는 단일 양자 방출 구조층을 포함하는 외부 캐버티를 갖는 단일 광자 소스 방출 장치를 제공한다.

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Номер записи: 11
21-03-2023 дата публикации

자외선을 이용한 수질내 염소 농도 측정 시스템 및 그 방법

Номер: KR20230039246A
Автор: 전성란, 송영호
Принадлежит:

... 본 발명은 자외선을 이용한 수질내 염소 농도 측정 시스템 및 그 방법에 관한 것으로서, 원수를 저장하는 제1 저장 탱크; 상기 저장탱크에 연결된 배관에 설치되고, 2개 이상의 전극으로 구성되어 상기 전극에 공급되는 전류에 의해 상기 원수를 전기분해하여 전해수로 변환시키는 전기분해 반응부; 상기 전해수가 저장되는 제2 저장 탱크; 상기 제2 저장 탱크의 일측에 설치되어, 기 설정된 파장 대역의 자외선을 입사광으로 상기 제2 저장 탱크 쪽으로 조사하는 발광부; 상기 제2 저장 탱크의 타측에 설치되어, 상기 전해수를 통과한 빛을 검출하는 검출부; 및 상기 검출부에서 검출된 빛을 이용하여 상기 전해수에서의 흡수광 스펙트럼을 산출한 후 입사광 스펙트럼을 비교하여 전해수 내 유리잔류염소의 농도를 산출하는 제어부를 포함하는 것이다.

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Номер записи: 12
08-07-2016 дата публикации

LIGHT CURTAIN TYPE LED LIGHT IRRADIATOR

Номер: KR1020160080791A
Автор: SONG, YOUNG HO, KIM, JAE BUM, JEON, SEONG RAN
Принадлежит:

The present invention relates to a light emitting diode (LED) light irradiator installed in an optical module system for concentrating light for medical environmental purposes, an ultraviolet sterilizer for water purification and an ultraviolet module system for air purification, and more specifically, to a light curtain type LED light irradiator to form LED light in a curtain shape within a fluid path and recycle the emitted LED light within the fluid path, so as to enhance integration and efficiency of light. According to the present invention, in an LED light irradiator to sterilize germs included in fluid by being placed in a pipe (1) having a fluid path (2) supplying fluid through the inside and by emitting light to the inside of the pipe (1), a light irradiator is formed by the predetermined number of LEDs (101) for emitting light in a ring shape, the light irradiator formed in the ring shape is attached on the outer surface of a transparent pipe (1), and the LEDs (101) emit the light ...

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Номер записи: 13
08-07-2016 дата публикации

NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020160081378A
Автор: CHUNG, TAE HOON, BEAK, JONG HYEOB, LEE, SANG HERN, JEON, SEONG RAN, JEONG, TAK, OH, HWA SUB, LEE, SEUNG JAE, JU, JIN WOO, JUNG, SUNG HOON, LEE, KWANG JAE, MIN, PAN KI
Принадлежит:

Disclosed is a nitride semiconductor light emitting device. A p-type nitride semiconductor layer of the present invention is arranged on a region where an active layer is not arranged in an n-type nitride semiconductor layer, and on the upper part of the active layer. The p-type nitride semiconductor layer is in contact with the vertical surface and the horizontal surface of the in-phase of the active layer. At the same time, holes are injected to the active layer. So, efficiency droop due to a difference between the mobility of holes and the mobility of electrons can be reduced. Also, the injection efficiency of holes can be improved. COPYRIGHT KIPO 2016 ...

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Номер записи: 14
03-11-2015 дата публикации

NITRIDE THIN FILM AND METHOD FOR PRODUCING SAME

Номер: KR1020150123034A
Автор: LEE, SEUNG JAE, JEON, SEONG RAN, JU, JIN WOO, PARK, HYUNG JO, JEONG, TAK, KIM, YOON SEOK, OH, HWA SUB, CHUNG, TAE HOON, KIM, JA YEON, JUNG, SUNG HOON, LEE, SANG HERN, BAEK, JONG HYEOB
Принадлежит:

Disclosed are a nitride thin film and a method for producing the same. The nitride thin film of the present invention is produced by the following steps: heating a silicone substrate at a first temperature which is a high temperature in a reaction furnace; feeding hydrogen into the reaction furnace; cooling the silicone substrate at a second temperature which is lower than the first temperature; uniformly feeding hydrogen into the reaction furnace; feeding trimethylaluminium (TMA) for a particular period of time; uniformly feeding hydrogen and TMA in the reaction furnace; feeding ammonia (NH_3) for a particular period of time; and heating the silicone substrate at the first temperature while uniformly feeding hydrogen, TMA, and NH_3 in the reaction furnace. COPYRIGHT KIPO 2016 (AA) Start (BB) End (S21) Heating a silicone substrate at a temperature higher than 1000°C in a reaction furnace (S22) Feeding hydrogen into the reaction furnace (S23) Cooling the silicone substrate down to 700-900 ...

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Номер записи: 15
22-09-2011 дата публикации

MULTI-LUMINOUS ELEMENT AND METHOD FOR MANUFACTURING SAME

Номер: WO2011115414A2
Автор: JEON, Seong Ran, KIM, Jae Bum, LEE, Seung Jae
Принадлежит:

The present invention relates to a multi-luminous element and a method for manufacturing the same. The present invention provides the multi-luminous element comprising: a buffer layer disposed on a substrate; a first type semiconductor layer disposed on the buffer layer; a first active layer which is disposed on the first type semiconductor layer and is patterned to expose a part of the first type semiconductor layer; a second active layer disposed on the first type semiconductor layer which is exposed by the first active layer; and a second type semiconductor layer disposed on the first active layer and the second active layer, the first and second active layers being repeatedly disposed in the horizontal direction, and the method for manufacturing the same. The multi-luminous element according to the present invention reduces loss of light emitting efficiency and can generate multi-wavelength light by repeatedly disposing the first and second active layers in the horizontal direction.

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Номер записи: 16
08-07-2016 дата публикации

UNIT LIGHT IRRADIATION MODULE AND EXTENSIBLE LIGHT IRRADIATION APPARATUS USING SAME

Номер: KR1020160080795A
Автор: SONG, YOUNG HO, JEON, SEONG RAN, KIM, JAE BUM
Принадлежит:

The present invention provides a unit light irradiation module capable of extending and connecting multiple unit light irradiation modules and an extensible light irradiation apparatus using the same. To this end, the apparatus comprises: a plurality of unit light irradiation modules including a base, a light source unit arranging multiple light emitting diode (LED) chips at a predetermined interval from the end part of the base in order to output light with a specific wavelength in the lower part of the base, and a connection groove formed on both upper sides of the base; and a connection unit combining with the connection groove in order to closely fix the unit light irradiation modules arranged in a predetermined shape. Accordingly, since each unit light irradiation module comprising the base and the optical source unit is extended and connected through the connection unit, the apparatus can properly cope with the size and the shape of a product. Moreover, a high optical power output ...

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Номер записи: 17
06-12-2016 дата публикации

질화물 박막 및 그 제조방법

Номер: KR0101681279B1
Автор: 이승재, 전성란, 주진우, 박형조, 정탁, 김윤석, 오화섭, 정태훈, 김자연, 정성훈, 이상헌, 백종협
Принадлежит: 한국광기술원

... 질화물 박막 및 그 제조방법이 개시된다. 본 발명의 질화물 박막은, 실리콘 기판을 반응로 내에서 고온의 제1온도로 가열하고, 상기 반응로 내에 수소를 주입하고, 상기 실리콘 기판을 상기 제1온도보다 낮은 제2온도로 냉각하고, 상기 반응로 내에 수소를 일정하게 주입하면서, 트리메틸알루미늄(TMA)를 소정 시간 주입하고, 상기 반응로 내에 수소 및 TMA를 일정하게 주입하면서, 암모니아(NH3)를 소정 시간 주입하고, 상기 반응로 내에 수소, TMA 및 NH3를 일정하게 주입하면서, 상기 실리콘 기판을 상기 제1온도로 가열하여 제조한다.

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Номер записи: 18
09-11-2016 дата публикации

NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

Номер: KR1020160129315A
Автор: LEE, SEUNG JAE, CHOI, SUNG CHUL, BAEK, JONG HYEOB, JEON, SEONG RAN, KIM, SANG MOOK
Принадлежит:

The present invention relates to a nitride semiconductor light emitting device with improved resistance against electrostatic discharge (ESD) and a manufacturing method thereof. The light emitting device of the present invention includes: a substrate (110); a first conductivity semiconductor layer (120) which is formed on the substrate (110); a high resistance semiconductor layer (130) which is formed on the first conductivity semiconductor layer (120); an activation layer (150) which is formed on the high resistance semiconductor layer (130); and a second conductivity semiconductor layer (160) which is formed on the activation layer (150). Each of the proximate surface between the high resistance semiconductor layer (130) and the first conductivity semiconductor layer (120) and the proximate surface between the activation layer (150) and the second conductivity semiconductor layer (160) has a v-pit structure (v2), and the proximate surface between the high resistance semiconductor layer ...

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Номер записи: 19
13-10-2016 дата публикации

NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND METHOD FOR MANUFACTURING SAME

Номер: WO2016163595A1
Автор: LEE, Seung-Jae, CHOI, Sung-Chul, BAEK, Jong-Hyeob, JEON, Seong-Ran, KIM, Sang-Mook, CHUNG, Tae Hoon
Принадлежит:

The present invention relates to a nitride semiconductor light-emitting device and a method for manufacturing same, which can improve the electrostatic discharge (ESD)-caused inner pressure properties of the nitride semiconductor light-emitting device. The light-emitting device of the present invention comprises an active layer formed, using a low-conductivity material, flat on a first conductive semi-conductor layer having a v-pit structure on the upper surface thereof, and a second conductive semi-conductor, or has a v-pit structure on a contact surface between a second conductive semi-conductor layer and an active layer formed, using a low-conductivity material, flat on a first conductive semi-conductor layer having a v-pit structure on the upper surface thereof. Thus, a v-pit area has a thickness equal to or greater than a critical thickness and thus has very low conductivity, thereby preventing the flow of a current, while the remaining area has a thickness equal to or less than a ...

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Номер записи: 20
07-12-2016 дата публикации

라이트 커튼형 LED 광 조사기

Номер: KR0101683351B1
Автор: 송영호, 김재범, 전성란
Принадлежит: 한국광기술원

... 본 발명은 의료 환경용 광집중을 위한 광 모듈 시스템, 수질 정화를 위한 자외선 광 살균 장치 및 공기 정화를 위한 자외선 광 모듈 시스템에 설치되는 LED 광 조사기에 관한 것으로서 더욱 상세하게는, 유체가 흐르는 유로에 커튼 형태로 LED광이 형성되도록 구성하고, 유로 내에서 조사된 LED광이 리사이클 되도록 구성함으로써 광의 집적화와 효율성을 향상 라이트 커튼형 LED광 조사기에 관한 것이다. 본 발명에 의한 라이트 커튼형 LED 광 조사기는 내부에 유체가 유동하는 유로(2)가 형성된 배관(1)에 설치되어 광을 배관(1) 내부로 조사함으로써 유체에 포함된 세균을 살균하도록 구성된 LED 광 조사기에 있어서, 광을 조사하는 소정 개수의 LED(101)가 링 형태로 성형되어 광 조사기를 구성하고, 상기 링 형태로 성형된 광 조사기는 투명한 배관(1)의 외면에 부착되며, 전원 공급에 의해 상기 LED(101)가 광을 관(1)의 중심축에 수직 방향으로 조사함으로써, 관(1) 내부 유로(2)에 막 형태의 라이트 커튼을 생성시켜 유로(2)를 유동하는 유체에 포함된 세균을 살균 정화하도록 구성된다.

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Номер записи: 21
02-10-2018 дата публикации

PORTABLE APPARATUS, SYSTEM AND METHOD FOR DIAGNOSING AND TREATING SKIN USING WAVELENGTH-TUNABLE LED

Номер: KR1020180107429A
Автор: JEON, SEONG RAN, SONG, YOUNG HO
Принадлежит:

The present invention relates to a portable apparatus, system and method for diagnosing and treating skin using a wavelength-tunable LED, to be portable and diagnose and treat the skin using an LED light source together. The portable apparatus for diagnosing and treating skin irradiates the skin with diagnostic light through a wavelength-tunable LED light source unit and acquires a skin image by photographing the state of the skin irradiated with the diagnostic light with a camera unit. The portable apparatus for diagnosing and treating skin diagnoses a skin condition with the acquired skin image, and treats the skin by irradiating a skin region requiring treatment according to a diagnosis result with treatment light through the wavelength-tunable LED light source unit. COPYRIGHT KIPO 2018 (10) Portable apparatus for diagnosing and treating skin conditions (17) Camera unit (23) Wavelength-tunable LED light source unit (50) Communication network (60) Diagnostic apparatus ...

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Номер записи: 22
23-09-2015 дата публикации

DEVICE WITH NITRIDE QUANTUM DOT AND MANUFACTURING METHOD THEREOF

Номер: KR1020150107467A
Автор: LEE, JAE SOONG, SONG, YOUNG HO, JEON, SEONG RAN, KIM, SEUNG HWAN
Принадлежит:

Disclosed are a device with a nitride quantum dot and a manufacturing method thereof. The disclosed device includes a nitride-based material layer, a plurality of nano rod layers which are formed on the nitride-based material layer and are separately arranged, and a nitride quantum dot which is formed on each nano rod layer. A pyramid type layer can be further formed between each nano rod layer and the nitride quantum dot. The nano rod layer and the nitride quantum dot are covered with a top contact layer. There are a plurality of nitride quantum dots on each nano rod layer. The nitride-based quantum dots include the nitride quantum dots with different sizes. COPYRIGHT KIPO 2015 ...

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Номер записи: 23
07-03-2017 дата публикации

광학식 조준경

Номер: KR0101712720B1
Автор: 오화섭, 이승재, 정태훈, 정성훈, 송영호, 전성란, 백종협
Принадлежит: 한국광기술원

... 본 발명은 광원부로부터 발광된 임의의 발광파장을 갖는 빛의 경로를 평행광선으로 정렬시켜 반사함으로써, 시차 발생을 감소시키는 광학식 조준경을 제공하는 것을 목적으로 한다. 이를 위해 본 발명은 하우징; 상기 하우징에 설치한 경통; 상기 경통의 내측에 설치되어 빛을 발광하는 광원부; 상기 광원부와 일정거리 이격설치하여, 상기 광원부로부터 발광된 빛이 평행광선이 되도록 변환하는 광학렌즈부; 및 상기 광학렌즈부에 의해 변환된 평행광선을 다른 경로로 반사하는 반사부를 포함하여 구성한다. 따라서 본 발명은 광원부로부터 발광된 임의의 발광파장을 갖는 빛의 경로를 평행광선으로 정렬시켜 반사함으로써, 시차 발생을 감소시키고, 이에 따라 목표물에 대해 보다 효율적이고 안정적인 조준을 달성할 수 있는 장점이 있다.

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Номер записи: 24
22-11-2016 дата публикации

질화물계 반도체 발광소자 및 그 제조방법

Номер: KR0101678524B1
Автор: 이승재, 최성철, 백종협, 전성란, 김상묵
Принадлежит: 한국광기술원

... 본 발명은 질화물계 반도체 발광소자의 정전기(Electrostatic Discharge: ESD) 내압특성을 개선할 수 있는 질화물계 반도체 발광소자 및 그 제조방법에 관한 것으로, 본 발명의 발광소자는, 기판(110); 상기 기판(110) 상부에 형성된 제1도전성 반도체층(120); 상기 제1도전성 반도체층(120) 상부에 형성되는 고저항 반도체층(130); 상기 고저항 반도체층(130) 상부에 형성된 활성층(150); 및, 상기 활성층(150) 상부에 형성되는 제2도전성 반도체층(160);을 포함하며, 상기 고저항 반도체층(130) 및 상기 제1도전성 반도체층(120)의 인접 면과, 상기 활성층(150) 및 상기 제2도전성 반도체층(160)의 인접 면에는 각각 V피트(v-pit)(v1)(v2) 구조를 가지며, 상기 고저항 반도체층(130)과 상기 활성층(150)의 인접 면은 V피트 구조를 포함하지 않고 평탄한 것을 특징으로 한다.

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Номер записи: 25
12-10-2016 дата публикации

IMPROVED LIGHT EMITTING DEVICE AMD METHOD FOR MANUFACTURING SAME

Номер: KR1020160118393A
Автор: OH, HWA SUB, LEE, SEUNG JAE, CHUNG, TAE HOON, JUNG, SUNG HOON, SONG, YOUNG HO, JEON, SEONG RAN, BAEK, JONG HYEOB
Принадлежит:

An object of the present invention is to provide an improved light emitting device and a method for manufacturing the same, capable of freely producing a variety of light emission patterns by controlling a plurality of transparent electrodes having various shapes to selectively emit light. To this end, the present invention comprises: a first semiconductor layer; a first electrode part formed on the upper one side or the lower one side of the first semiconductor layer; an active layer laminated on the upper part of the first semiconductor layer; a second semiconductor layer laminated on the upper part of the active layer; and a second electrode part which includes a light emission pattern to arrange at least one transparent electrode for emitting light having an optical wavelength after being in ohmic contact on the second semiconductor layer, and a power supply pattern to supply power to the light emission pattern after being insulated from the second semiconductor layer. Accordingly, ...

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Номер записи: 26
12-04-2012 дата публикации

NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: WO2012046955A3
Автор: JEON, Seong Ran, SONG, Young Ho, KIM, Jae Bum, KIM, Young Woo, CHEON, Woo Young, KIM, Jin Hong
Принадлежит:

The present invention relates to a nitride based semiconductor light emitting device, and more particularly, to a nitride based semiconductor light emitting device with improved luminescence efficiency by increasing a recombination rate of electrons and holes contributing to luminescence, which results from matching the spatial distribution of electron and hole wave functions. The nitride based semiconductor light emitting device according to the present invention includes an n-type nitride layer, an active layer formed on the n-type nitride layer, and a p-type nitride layer formed on the active layer. At this stage, a strain control layer is formed from at least one layer in the active layer, and the at least one layer has a larger energy bandgap than a quantum well layer in the active layer. The strain control layer is disposed in an area where the quantum well layer of the active layer is formed. Moreover, an energy bandgap of the strain control layer is less than that of a quantum barrier ...

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Номер записи: 27
15-03-2017 дата публикации

단위 광 조사모듈 및 이를 이용한 확장형 광 조사장치

Номер: KR0101716939B1
Автор: 송영호, 전성란, 김재범
Принадлежит: 한국광기술원

... 본 발명은 베이스와 광원부로 이루어지는 각각의 단위 광 조사모듈을 연결부를 통해 다수개로 확장연결하여 제품의 크기와 모양에 적절하게 대응할 수 있는 단위 광 조사모듈 및 이를 이용한 확장형 광 조사장치를 제공하는 것을 목적으로 한다. 이를 위해 본 발명은 베이스와, 상기 베이스의 하부에서 임의의 파장을 갖는 빛이 출력되도록 다수의 LED칩을 상기 베이스의 말단부터 일정 간격으로 배치한 광원부와, 상기 베이스의 상부 양측에 형성한 체결홈을 구비한 복수의 단위 광 조사모듈; 및 일정 형상으로 배열된 상기 단위 광 조사모듈이 밀착 고정되도록 상기 체결홈에 결합하는 연결부를 포함하여 구성한 것을 특징으로 한다. 따라서 본 발명에 따른 단위 광 조사모듈 및 이를 이용한 확장형 광 조사장치는 베이스와 광원부로 이루어지는 각각의 단위 광 조사모듈을 연결부를 통해 다수개로 확장연결하여 제품의 크기와 모양에 적절하게 대응할 수 있는 장점이 있다. 또한, COB패키지를 적용한 광원부의 구성을 통해 고출력의 광 파워를 유도할 수 있으며, 각각의 단위 광 조사모듈이 연결되면서 광원부의 LED칩이 일정하게 배열되어 광 균일도를 유지시킬 수 있는 장점이 있다.

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Номер записи: 28