04-05-2016 дата публикации
Номер: KR1020160048257A
Принадлежит:
The present invention relates to a CMOS humidity sensor and a manufacturing method thereof. The CMOS humidity sensor comprises: a humidity sensor area and a peripheral circuit area on a semiconductor substrate; and a humidity sensor which is formed in the humidity sensor area, wherein the humidity sensor includes a lower electrode, an insulation film and a connection-via the lower electrode, a second electrode which is electrically connected to the lower electrode through the connection-via, a first electrode which is disposed in a row of the second electrode side, a humidity sensitive layer which is formed between the first and second electrodes, and a protective film which is formed on the humidity sensitive layer. According to the CMOS humidity sensor and the manufacturing method thereof, the humidity sensor can be manufactured as one chip on a semiconductor package or a semiconductor wafer, and it is possible to secure reliability of the humidity sensor by forming the protecting film ...
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