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Применить Всего найдено 78. Отображено 78.
03-01-2017 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020170000453A
Автор: JIN, GEUN MO
Принадлежит:

The present invention relates to a semiconductor light emitting device which includes: a plurality of semiconductor layers including a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer interposed between the first and second semiconductor layers to generate light through the recombination of an electron and a hole; a first extending type electrode formed on a first semiconductor layer etched to be exposed; an insulative reflecting film formed on the semiconductor layers to cover the first extending type electrode to reflect light from the active layer; a first electrode formed on the insulative reflecting film, and supplying one of the electron and the hole to the first semiconductor layer through the first extending type electrode; and a second electrode formed on the insulative reflecting film, and supplying the other one of the electron and the hole to the second semiconductor ...

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Номер записи: 1
21-01-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020160007927A
Автор: JEON, SOO KUN, CHOI, IL GYUN, JIN, GEUN MO
Принадлежит:

Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes: multiple semiconductor layers having a first semiconductor layer with first conductivity, a second semiconductor layer with second conductivity different from the first conductivity, and an active layer installed between the first semiconductor layer and the second semiconductor layer and generating light by recombination of an electron and a hole, wherein the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer are formed on a growth substrate in order; a nonconductive reflecting film formed on the semiconductor layers to reflect light generated in the active layer to the growth substrate; a first electrode formed on the nonconductive reflecting film and supplying one of the electron and the hole, wherein the first electrode is electrically connected to the first semiconductor layer; and a second electrode formed on the nonconductive reflecting film ...

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Номер записи: 2
11-02-2016 дата публикации

SEMICONDUCTOR LIGHT-EMITTING ELEMENT

Номер: WO2016021833A1
Автор: JIN, Geun Mo, JEON, Soo Kun, KIM, Tae Hyun, LEE, Sung Chan
Принадлежит:

The present disclosure pertains to a semiconductor light-emitting element comprising: a plurality of semiconductor layers having two long edges that face each other and two short edges that face each other; at least one of a first branch electrode extending over a first semiconductor layer, which is exposed by removal of a second semiconductor layer and an active layer, from a long edge on one side towards a long edge on the other side and a second branch electrode extending over the second semiconductor layer from the long edge on the other side towards the long edge on one side; a non-conductive reflective film, which is formed to cover the plurality of semiconductor layers and the first and second branch electrodes, and which reflects light from the active layer; a first electrode provided on the long edge on one side so as to electrically connect with the first semiconductor layer; and a second electrode provided on the long edge on the other side so as to electrically connect with ...

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Номер записи: 3
12-09-2018 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020180101027A
Автор: JEON, SOO KUN, PARK, JUN CHUN, JIN, GEUN MO, JEONG, YEON HO
Принадлежит:

The present disclosure relates to a semiconductor light emitting device capable of improving the reliability of soldering. The semiconductor light emitting device includes: a plurality of semiconductor layers comprising a first semiconductor layer with first conductivity, a second semiconductor layer with second conductivity different from the first conductivity, and an active layer which is interposed between the first semiconductor layer and the second semiconductor layer and generates light through recombination of an electron and a hole; a non-conductive reflective layer formed on the plurality of semiconductor layers to reflect the light generated in the active layer toward the first semiconductor layer; a first electrode part electrically connected to the first semiconductor layer and supplying one of the electron and the hole; and a second electrode part electrically connected to the second semiconductor layer and supplying the remaining one of the electron and the hole. At least ...

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Номер записи: 4
04-07-2017 дата публикации

SEMICONDUCTOR LIGHT EMITTING ELEMENT

Номер: KR1020170076633A
Автор: JEON, SOO KUN, KIM, TAE HYUN, JIN, GEUN MO, CHOI, IL GYUN
Принадлежит:

The present disclosure relates to a semiconductor light emitting element which comprises: a plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, and generating light by recombination of electrons and holes; a first electrode equipped on one side of the plurality of semiconductor layers, and supplying one of the electrons and the holes to the first semiconductor layer; a second electrode prepared on one side of the plurality of semiconductor layers, and supplying the other one of the electrons and holes to the second semiconductor layer; and a bank formed between the first electrode and the second electrode, wherein the bank is electrically separated from the first electrode and the second electrode. COPYRIGHT KIPO 2017 ...

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Номер записи: 5
16-04-2015 дата публикации

SEMICONDUCTOR LIGHT EMITTING DIODE

Номер: WO2015053600A1
Автор: JEON, Soo Kun, JIN, Geun Mo, BAEK, Seung Ho
Принадлежит:

The present disclosure relates to a semiconductor light emitting diode, and the semiconductor light emitting diode comprises: a plurality of semiconductor layers comprising a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, for generating light through recombination of electrons and holes; a first electrode portion which electrically communicates with the first semiconductor layer and supplies electrons or electron holes; a second electrode portion which electrically communicates with the second semiconductor layer and supplies remaining electrons or electron holes not supplied by the first electrode portion; and a nonconductive reflective film provided with a first opening, wherein either the first electrode portion or the second electrode portion comprises a lower electrode, which is an island type lower electrode corresponding ...

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Номер записи: 6
14-12-2017 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020170137991A
Автор: JEON, SOO KUN, PARK, JUN CHUN, JIN, GEUN MO, JEONG, YEON HO
Принадлежит:

The present invention relates to a semiconductor light emitting device capable of efficiently reflecting light. The semiconductor light emitting device comprises: a plurality of semiconductor layers including a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light by recombination of an electron and a hole; a non-conductive reflective film formed on the semiconductor layers to reflect the light generated in the active layer toward the first substrate; an insulating layer formed on the non-conductive reflective film; a first electrode part electrically connected to the first semiconductor layer and supplying one of an electron and a hole; and a second electrode part electrically connected to the second semiconductor layer and supplying the other one of the electron and the ...

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Номер записи: 7
13-12-2018 дата публикации

반도체 발광소자의 제조 방법

Номер: KR0101928309B1
Автор: 진근모
Принадлежит: 주식회사 세미콘라이트

... 본 개시는 반도체 발광소자의 제조 방법에 있어서, 기판 상에 복수의 반도체층을 형성하는 단계;로서, 제1 도전성을 가지는 제1 반도체층, 제1 도전성과 다른 제2 도전성을 가지는 제2 반도체층 및 제1 반도체층과 제2 반도체층 사이에 개재되며 전자와 정공의 재결합을 통해 빛을 생성하는 활성층을 가지는 복수의 반도체층을 형성하는 단계; 제1 반도체층을 메사 식각하여 일부를 노출하는 단계; 높이차를 갖는 노출된 제1 반도체층 및 제2 반도체층을 평탄화하는 평탄층을 형성하는 단계; 평탄층 위에 비도전성 반사막을 형성하는 단계; 그리고 비도전성 반사막 위에 제1 전극 및 제2 전극을 형성하는 단계;로서, 비도전성 반사막 및 평탄층을 관통하여 각각 노출된 제1 반도체층 및 제2 반도체층과 전기적으로 연결되는 제1 전극 및 제2 전극을 형성하는 단계;를 포함하고, 평탄층의 상면은 평탄한 면을 갖고, 평탄층의 하면은 비평탄한 면을 갖는 반도체 발광소자의 제조 방법에 관한 것이다.

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Номер записи: 8
14-07-2017 дата публикации

SEMICONDUCTOR LIGHT EMITTING ELEMENT

Номер: KR1020170082175A
Автор: JEON, SOO KUN, JIN, GEUN MO, CHOI, IL GYUN
Принадлежит:

Disclosed is a semiconductor light emitting element, which is a flip chip. The semiconductor light emitting element comprises: a plurality of semiconductor layers including a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer disposed between the first and second semiconductor layers and generating light through recombination of an electron and a hole; an insulating layer formed on the plurality of semiconductor layers and including an opening; and an electrode formed on the insulating layer, electrically connected to the plurality of semiconductor layers through the opening, and having an upper surface and a lower surface, wherein the size of the upper surface is smaller than the size of the lower surface. COPYRIGHT KIPO 2017 ...

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Номер записи: 9
12-02-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020160015342A
Автор: PARK, EUN HYUN, JEON, SOO KUN, CHOI, IL GYUN, JIN, GEUN MO
Принадлежит:

Disclosed is a semiconductor light emitting device having increased luminance efficiency, comprising: a plurality of light emitting units having a plurality of semiconductor layers and a reflective layer; a first electrode electrically connected to a first semiconductor layer; a second electrode electrically connected to a second semiconductor layer; and a growth substrate with a hexahedral shape having the light emitting units. The growth substrate has one face and another face. One face has a lower side on which the semiconductor layers are formed, an upper side facing the lower side, and two lateral sides connecting the lower side and the upper side. The upper side has a length of 150 um or less, and another face is continued from one side of one face and has a lower side on which the semiconductor layers are formed and an upper side facing the lower side. The upper side of another face is longer than the upper side of one face. COPYRIGHT KIPO 2016 ...

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Номер записи: 10
06-10-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: WO2016159744A1
Автор: JEON, Soo Kun, PARK, Jun Chun, CHOI, Il Gyun, LEE, Sung Gi, SOUL, Dae Soo, KIM, Tea Jin, JEONG, Yeon Ho, JIN, Geun Mo, LEE, Sung Chan
Принадлежит:

Disclosed is a semiconductor light emitting device comprising: a plurality of semiconductor layers; a first non-conductive reflection film formed on the plurality of semiconductor layers so as to reflect light from an active layer, wherein the first non-conductive reflection film has a plurality of layers and a first incident angle becoming a Brewster angle; a second non-conductive reflection film formed on the first non-conductive reflection film so as to reflect light passed through the first non-conductive reflection film, wherein the second non-conductive reflection film has a plurality of layers of which some layers are made of a material different from that of the first non-conductive reflection film, and has a second incident angle different from the first incident angle and becoming a Brewster angle; and an electrode electrically connected to the plurality of semiconductor layers.

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Номер записи: 11
14-01-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: WO2016006849A1
Автор: PARK, Eun Hyun, JEON, Soo Kun, CHOI, Il Gyun, JIN, Geun Mo
Принадлежит:

The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers; a reflective layer provided on one side of the plurality of semiconductor layers and reflecting light generated by an active layer; a first electrode and a second electrode for supplying electrons and holes, at least one of the first electrode and the second electrode being electrically isolated from the plurality of semiconductor layers and being in electrical communication with the plurality of semiconductor layers by an electrical connection; and a growth substrate provided on the opposite side of the reflective layer on the basis of the plurality of semiconductor layers and having a hexahedral shape, wherein one side of the hexahedron has a bottom surface having the plurality of semiconductor layers formed thereon, a top surface opposite to the bottom surface, and two side surfaces connecting the bottom surface and the top surface, the top surface having a length ...

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Номер записи: 12
28-12-2015 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020150144404A
Автор: BAEK, SEUNG HO, JIN, GEUN MO, JEON, SOO KUN
Принадлежит:

The present invention relates to a semiconductor light emitting device. The semiconductor light emitting device includes: multiple semiconductor layers including a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity, different from the first conductivity, and an active layer interposed between the first and second semiconductor layers and generating light through recombination between an electron and a hole; a first electrode part electrically connected to the first semiconductor layer and supplying one among the electron and the hole; a second electrode part electrically connected to the second semiconductor layer and supplying the other among the electron and the hole; a nonconductive reflecting film formed on multiple semiconductor layers to reflect the light from the active layer to the first semiconductor layer; and an insulating film formed on the nonconductive reflecting film. At least one among the first and second electrode ...

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Номер записи: 13
17-03-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR0101604092B1
Автор: 백승호, 진근모, 전수근
Принадлежит: 주식회사 세미콘라이트

... 본 개시는 반도체 발광소자에 있어서, 제1 도전성을 가지는 제1 반도체층, 제1 도전성과 다른 제2 도전성을 가지는 제2 반도체층 및 제1 반도체층과 제2 반도체층 사이에 개재되며 전자와 정공의 재결합을 통해 빛을 생성하는 활성층을 가지는 복수의 반도체층; 제1 반도체층과 전기적으로 연통하며 전자와 정공 중 하나를 공급하는 제1 전극부; 제2 반도체층과 전기적으로 연통하며 전자와 정공 중 나머지 하나를 공급하는 제2 전극부; 활성층에서 생성된 빛을 제1 반도체층 측으로 반사하도록 복수의 반도체층 위에 형성된 비도전성 반사막; 그리고 비도전성 반사막 위에 형성된 절연막;을 포함하며 제1 전극부와 제2 전극부 중의 적어도 하나는: 절연막 위에 형성된 상부전극; 상부전극 아래의 비도전성 반사막과 절연막 사이에 형성된 섬형(island type) 연결전극; 상부전극 아래의 비도전성 반사막과 절연막 사이에서 상부전극 바깥으로 뻗는 연장형(extending type) 연결전극; 절연막을 관통하여 상부전극과 섬형 연결전극 및 연장형 연결전극을 각각 연결하는 복수의 상측 전기적 연결; 그리고 비도전성 반사막을 관통하여 섬형 연결전극 및 연장형 연결전극과 복수의 반도체층을 각각 전기적으로 연결하는 복수의 하측 전기적 연결;을 포함하는 것을 특징으로 하는 반도체 발광소자에 관한 것이다.

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Номер записи: 14
28-06-2018 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: WO2018117680A2
Автор: JIN, Geun Mo, JEONG, Yeon Ho, JEON, Soo Kun, PARK, Jun Chun, LEE, Sung Gi, LEE, Sung Gyu
Принадлежит:

The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers comprising a first semiconductor layer with first conductivity, a second semiconductor layer with second conductivity different from the first conductivity, and an active layer which is interposed between the first semiconductor layer and the second semiconductor layer and generates light through recoupling of an electron and a hole; a reflective film formed on the plurality of semiconductor layers to reflect the light generated in the active layer toward the first semiconductor layer; an insulating layer formed on the reflective film; a first electrode part electrically connected to the first semiconductor layer and supplying one of the electron and the hole; and a second electrode part electrically connected to the second semiconductor layer and supplying the remaining one of the electron and the hole, wherein the first electrode part comprises: a first pad electrode ...

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Номер записи: 15
05-07-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR101635908B1
Автор: JIN, GEUN MO, LEE, SUNG CHAN
Принадлежит: SEMICON LIGHT CO., LTD.

The present disclosure relates to a semiconductor light emitting device having an electrode structure that reduces a light loss. The semiconductor light emitting device comprises: a plurality of semiconductor layers which include a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the semiconductor layer to generate light through a recombination of electrons and holes; a non-conductivity reflection film which is formed on the plurality of semiconductor layers and reflects the light from the active layer; a first electrode which is formed on the non-conductivity reflection film and has a pad portion and a protrusion protruding from the pad portion; a second electrode which is formed on the non-conductivity reflection film and faces the protrusion; a first branch electrode which is formed on the first semiconductor layer ...

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Номер записи: 16
07-03-2018 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020180023933A
Автор: PARK EUN HYUN, JEON SOO KUN, CHOI IL GYUN, JIN GEUN MO
Принадлежит:

The present invention relates to a semiconductor light emitting device which comprises: a plurality of semiconductor layers; a reflection layer provided on one side of the plurality of semiconductor layers and reflecting light generated in an active layer; first and second electrodes supplying an electron and a hole and electrically connected to the plurality of semiconductor layers by an electrical connection; and a growth substrate provided on the other side of the reflection layer with respect to the plurality of semiconductor layers and having a hexahedral shape. At least one of the first and second electrodes is electrically insulated from the plurality of semiconductor layers. In addition, the hexahedron of the growth substrate includes one surface as a lower surface in which the plurality of semiconductor layers are formed, an upper surface opposite to the lower surface, and two side surfaces connecting the lower surface and the upper surface, and the upper surface has a length of ...

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Номер записи: 17
26-10-2018 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020180117015A
Автор: JEON, SOO KUN, PARK, JUN CHUN, LEE, SUNG GI, JIN, GEUN MO
Принадлежит:

Disclosed is a semiconductor light emitting device to reduce degradation of brightness. According to the present invention, the semiconductor light emitting device comprises: a plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first and second semiconductor layers, and generating light through recombination of an electron and a hole; a reflective film formed on the semiconductor layers to reflect the light generated from the active layer towards the first semiconductor layer; an insulation layer formed on the reflective film; a first electrode part electrically connected to the first semiconductor layer and supplying any one of the electron and the hole; and a second electrode part electrically connected to the second semiconductor layer and supplying the remaining one of the electron and the hole.

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Номер записи: 18
17-05-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020160054692A
Автор: JIN, GEUN MO, JEON, SOO KUN
Принадлежит:

Disclosed is a semiconductor light emitting device comprising multiple semiconductor layers including a first semiconductor layer, a second semiconductor layer and an active layer, a first electrode part, a second electrode part, and an insulation reflection layer which is formed on the multiple semiconductor layers and reflects light from the active layer. At least one of the first electrode part and the second electrode part comprises a first upper electrode formed on the insulation reflection layer, a first branch electrode which is branched to the outside of the first upper electrode under the first upper electrode, a first electrical connection which passes through the insulation reflection layer and connects the first upper electrode to the first branch electrode, and a second electrical connection which passes through the insulation reflection layer, electrically connects the first upper electrode and the multiple semiconductor layers, and deviates from a line extended from the first ...

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Номер записи: 19
07-07-2017 дата публикации

반도체 발광소자

Номер: KR0101753750B1
Автор: 진근모, 김태현
Принадлежит: 주식회사 세미콘라이트

... 본 개시는 반도체 발광소자에 있어서, 제1 도전성을 가지는 제1 반도체층, 제1 도전성과 다른 제2 도전성을 가지는 제2 반도체층, 및 제1 반도체층과 제2 반도체층의 사이에 개재되어 전자와 정공의 재결합에 의해 빛을 생성하는 활성층을 가지는 복수의 반도체층;으로서, 제2 반도체층 측으로부터 제1 반도체층을 노출하도록 복수의 홈이 형성된 복수의 반도체층; 제2 반도체층 위에서 뻗으며, 각 홈의 측면으로 연장되며, 각 홈의 제1 반도체층을 노출하는 절연층; 절연층 위에서 뻗으며, 각 홈의 제1 반도체층과 전기적으로 도통하여 전자와 정공 중 하나를 공급하는 연결 전극; 그리고 제2 반도체층 위에 형성되어, 제2 반도체층에 전자와 정공 중 나머지 하나를 공급하는 접촉 전극;을 포함하는 것을 특징으로 하는 반도체 발광소자에 관한 것이다.

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Номер записи: 20
16-06-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR0101630371B1
Автор: 박은현, 전수근, 최일균, 진근모
Принадлежит: 주식회사 세미콘라이트

... 본 개시는 반도체 발광소자에 있어서, 복수의 반도체층; 복수의 반도체층의 일 측에 구비되며, 활성층에서 생성된 빛을 반사시키는 반사층; 전자와 정공을 공급하는 제1 전극 및 제2 전극;으로서, 제1 전극 및 제2 전극 중의 적어도 하나는 복수의 반도체층으로부터 전기적으로 절연되어 있으며, 전기적 연결(an electrical connection)에 의해 복수의 반도체층과 전기적으로 연통하는 제1 전극 및 제2 전극; 그리고, 상면이 그 길이가 200㎛일 때의 외부양자효율과 비교하여 내부양자효율의 감소를 광취출효율의 증가가 상쇄할 수 있도록 75㎛이상 200㎛이하의 길이를 가지는 성장 기판;을 포함하는 것을 특징으로 하는 반도체 발광소자에 관한 것이다.

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Номер записи: 21
28-12-2015 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020150144402A
Автор: BAEK, SEUNG HO, JIN, GEUN MO, JEON, SOO KUN
Принадлежит:

The present invention relates to a semiconductor light emitting device. The semiconductor light emitting device includes: multiple semiconductor layers including a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity, different from the first conductivity, and an active layer interposed between the first and second semiconductor layers and generating light through recombination between an electron and a hole; a first electrode part electrically connected to the first semiconductor layer and supplying one among the electron and the hole; a second electrode part electrically connected to the second semiconductor layer and supplying the other among the electron and the hole; and a nonconductive reflecting film formed on multiple semiconductor layers to reflect the light from the active layer to the first semiconductor layer, and including a first opening. At least one among the first and second electrode parts includes: an island type ...

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Номер записи: 22
19-12-2019 дата публикации

SEMICONDUCTOR LIGHT-EMITTING DEVICE

Номер: WO2019240371A1
Автор: JIN, Geun Mo, JEON, Soo Kun, PARK, Jun Chun
Принадлежит:

Disclosed is a semiconductor light-emitting device coming into contact with an ejection needle, comprising: as a plurality of light-emitting units formed on a substrate, a first light-emitting unit and a second light-emitting unit, which respectively have a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity that differs from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light by means of the recombination of electrons and holes; a connection part electrically connecting the first light-emitting unit to the second light-emitting unit; an insulating layer provided on the first light-emitting unit and the second light-emitting unit; a first electrode part electrically connected to the second semiconductor layer of the first light-emitting unit by penetrating the insulating layer; and a second electrode part electrically connected to ...

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Номер записи: 23
13-11-2017 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020170124990A
Автор: JEON SOO KUN, JIN GEUN MO, CHOI IL GYUN
Принадлежит:

The present disclosure relates to a semiconductor light emitting device, which comprises a plurality of semiconductor layers each of which include a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light through recombination of holes; an insulating layer formed on the plurality of semiconductor layers and including an opening; and an electrode formed on the insulating layer, electrically connected to the plurality of semiconductor layers through the opening, and having an upper surface and a lower surface, wherein the area of the upper surface is smaller than that of the lower surface. The semiconductor light emitting device is a flip chip. COPYRIGHT KIPO 2017 ...

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Номер записи: 24
22-12-2016 дата публикации

SEMICONDUCTOR LIGHT-EMITTING ELEMENT

Номер: WO2016204594A1
Автор: JIN, Geun Mo, JEON, Soo Kun, KIM, Tae Hyun, PARK, Eun Hyun, CHOI, Il Gyun, BAEK, Seung Ho
Принадлежит:

A semiconductor light-emitting element (semiconductor light-emitting device) is disclosed which comprises: a bonding layer which is joined to a bonding substance during joining (bonding) and contains at least one of Ni, Cu, NiAg and Be; a light-reflecting layer which is provided between the bonding layer and a non-electrically-conducting reflecting film, and reflects the light which is created in an active layer and passes through and emerges from the non-electrically-conducting reflecting film; and an electrode which is provided between the bonding layer and the light-reflecting layer so as to prevent light-reflecting-layer substances from penetrating into the bonding layer, and is provided with a diffusion-preventing layer comprising at least one of Ti, Cr, Pt, Ta, Mg and Fe.

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Номер записи: 25
01-08-2016 дата публикации

반도체 발광소자

Номер: KR0101643687B1
Автор: 진근모, 전수근, 박준천
Принадлежит: 주식회사 세미콘라이트

... 본 개시는 반도체 발광소자에 있어서, 제1 반도체층, 제2 반도체층, 및 활성층을 가지는 복수의 반도체층; 전자와 정공 중 하나를 제1 반도체층에 공급하는 제1 전극부와, 전자와 정공 중 나머지 하나를 제2 반도체층에 공급하는 제2 전극부; 그리고 복수의 반도체층 위에 형성되며, 활성층으로부터의 빛을 반사하는 절연성 반사층;을 포함하며, 제1 전극부와 제2 전극부 중 적어도 하나는: 절연성 반사층 위에 형성된 상부 전극; 절연성 반사층 아래에서 복수의 반도체층과 전기적으로 연통된 섬형(island type) 오믹 전극, 연결형 오믹 전극, 연결형 오믹 전극으로부터 뻗는 가지 전극; 그리고 절연성 반사층을 관통하여 연결형 오믹 전극과 상부 전극을 연결하는 전기적 연결;을 포함하며, 연결형 오믹 전극은 섬형 오믹 전극보다 면적이 큰 것을 특징으로 하는 반도체 발광소자에 관한 것이다.

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Номер записи: 26
21-01-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020160008032A
Автор: PARK, EUN HYUN, JEON, SOO KUN, CHOI, IL GYUN, JIN, GEUN MO
Принадлежит:

The present disclosure relates to a light emitting device which comprises: a plurality of semiconductor layers; a reflective layer provided one side of the semiconductor layers, and reflecting light generated in an active layer; a first electrode and a second electrode for supplying an electrode and a hole wherein at least one of the first electrode and the second electrode is electrically insulated from the semiconductor layers, and the first electrode and the second electrode electrically communicate with the semiconductor layers by an electrical connection; and a growing substrate having the length of 75 μm or greater and 200 μm or smaller to countervail the decrease of inner quantum efficiency with the increase of light extraction efficiency by comparing outer quantum efficiency when the length of an upper surface is 200 μm. COPYRIGHT KIPO 2016 ...

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Номер записи: 27
16-08-2018 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: WO2018117680A3
Автор: JIN, Geun Mo, JEONG, Yeon Ho, JEON, Soo Kun, PARK, Jun Chun, LEE, Sung Gi, LEE, Sung Gyu
Принадлежит:

The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers comprising a first semiconductor layer with first conductivity, a second semiconductor layer with second conductivity different from the first conductivity, and an active layer which is interposed between the first semiconductor layer and the second semiconductor layer and generates light through recoupling of an electron and a hole; a reflective film formed on the plurality of semiconductor layers to reflect the light generated in the active layer toward the first semiconductor layer; an insulating layer formed on the reflective film; a first electrode part electrically connected to the first semiconductor layer and supplying one of the electron and the hole; and a second electrode part electrically connected to the second semiconductor layer and supplying the remaining one of the electron and the hole, wherein the first electrode part comprises: a first pad electrode ...

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Номер записи: 28
14-04-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: WO2016056823A1
Автор: JEON, Soo Kun, KIM, Tae Hyun, KIM, Tea Jin, JIN, Geun Mo, PARK, Jun Chun
Принадлежит:

The present disclosure relates to a semiconductor light-emitting device comprising a plurality of semiconductor layers, a first electrode part, and a second electrode part, wherein the first electrode part and/or the second electrode part comprise(s): an upper electrode formed on an insulating reflection layer; an island type ohmic electrode, a connection type ohmic electrode, and a branch electrode branched out from the connection type ohmic electrode, the ohmic electrodes and the branch electrode electrically communicating with the plurality of semiconductor layers under the insulating reflection layer; and an electrical connection penetrating the insulating reflection layer so as to connect the connection type ohmic electrode with the upper electrode, wherein the area of the connection type ohmic electrode is larger than that of the island type ohmic electrode.

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Номер записи: 29
17-03-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR0101604095B1
Автор: 진근모, 전수근
Принадлежит: 주식회사 세미콘라이트

... 본 개시는 반도체 발광소자에 있어서, 제1 도전성을 가지는 제1 반도체층, 제1 도전성과 다른 제2 도전성을 가지는 제2 반도체층 및 제1 반도체층과 제2 반도체층 사이에 개재되며 전자와 정공의 재결합을 통해 빛을 생성하는 활성층을 가지는 복수의 반도체층;으로서, 성장 기판을 이용해 순차로 성장되는 복수의 반도체층; 활성층에서 생성된 빛을 성장 기판 측으로 반사하도록 복수의 반도체층 위에 구비된 비도전성 반사막; 비도전성 반사막 위에 구비되며 제1 반도체층에 전자와 정공 중 하나를 공급하는 제1 전극; 그리고 비도전성 반사막 위에 제1 전극으로부터 떨어지도록 구비되며 제2 반도체층에 전자와 정공 중 나머지 하나를 공급하는 제2 전극;을 포함하며, 복수의 반도체층 위를 가로지르는 제1 전극의 에지 및 제2 전극의 에지 중 적어도 하나는 복수의 반도체층의 에지에 대해 비스듬하게(oblique) 형성된 것을 특징으로 하는 반도체 발광소자에 관한 것이다.

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Номер записи: 30
27-12-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR101689344B1
Автор: JEON, SOO KUN, JIN, GEUN MO
Принадлежит: SEMICON LIGHT CO., LTD.

The present invention relates to a semiconductor light emitting device comprising: a plurality of semiconductor layers which include a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light through recombination of electrons and holes, and are grown by using a growth substrate; a nonconductive reflective film which is coupled to the plurality of semiconductor layers on the opposite side of the growth substrate; and an electrode which is electrically connected to the plurality of semiconductor layers, is formed on the nonconductive reflective film, and includes a bonding layer bonded to a bonding material at the time of bonding, and including at least one of Ni, Cu, NiAg, and Be, a light-reflecting layer provided between the bonding layer and the nonconductive reflective film ...

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Номер записи: 31
18-12-2015 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020150141198A
Автор: JIN, GEUN MO, BAEK, SEUNG HO
Принадлежит:

The present disclosure relates to a semiconductor light emitting device comprising: multiple semiconductor layers which include a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light through recombination of electrons and holes; a first electrode unit which is electrically connected to the first semiconductor layer and supplies one of electrons and holes; a second electrode unit which is electrically connected to the second semiconductor layer and supplies the other of electrons and holes; a non-conductive reflective film which is formed on the semiconductor layers to reflect the light generated in the active layer to the first semiconductor layer, and has an opening formed; and an additional reflective film which is formed on the non-conductive reflective film to reflect ...

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Номер записи: 32
02-01-2017 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020170000019A
Автор: JEON, SOO KUN, KIM, TAE HYUN, JIN, GEUN MO, CHOI, IL GYUN
Принадлежит:

The present disclosure relates to a semiconductor light emitting device which comprises: a plurality of semiconductor layers including a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer to generate light by recombination of an electron and a hole; a first electrode provided on one side of each of the semiconductor layers, and supplying either the electron or the hole to the first semiconductor layer; a second electrode provided on one side of each of the semiconductor layers, and supplying the other one from the electron and the hole to the second semiconductor layer; and a bank formed between the first electrode and the second electrode, and electrically separated from the first electrode and the second electrode. The semiconductor light emitting device has improved reliability for a long-term ...

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Номер записи: 33
11-07-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020160082946A
Автор: JIN, GEUN MO, JEON, SOO KUN, PARK, JUN CHUN
Принадлежит:

The present invention relates to a semiconductor light emitting device which comprises: a plurality of semiconductor layers including a first semiconductor layer which has first conductivity, a second semiconductor layer which has second conductivity different from the first conductivity, and an active layer which is interposed between the first semiconductor layer and the second semiconductor layer and generates light by recombination of electrons and holes; a first electrode unit which supplies one of the electrons and the holes to the first semiconductor layer; a second electrode unit which supplies the other of the electrons and the holes to the second semiconductor layer; an insulation reflection layer which is formed on the plurality of semiconductor layers and reflects the light from the active layer, wherein at least one of the first electrode unit or the second electrode unit includes an upper electrode which is formed on the insulation reflection layer, a connection-type ohmic ...

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Номер записи: 34
12-09-2018 дата публикации

METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020180101026A
Автор: JIN, GEUN MO
Принадлежит:

The present invention relates to a method of manufacturing a semiconductor light emitting device, capable of improving the reflection efficiency by forming a flat nonconductive reflective film using a flat layer. The method of manufacturing a semiconductor light emitting device includes the steps of: forming a plurality of semiconductor layers on a substrate, in which the semiconductor layers include a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first and second semiconductor layers to generate light through recombination of electrons and holes; exposing a portion of the first semiconductor layer through mesa etching; forming a flat layer for planarizing the exposed first semiconductor layer and the second semiconductor layer having a height difference; forming a non-conductive reflective layer on the flat layer; and forming a first electrode ...

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Номер записи: 35
05-04-2018 дата публикации

SEMICONDUCTOR LIGHT EMITTING ELEMENT

Номер: WO2018062852A1
Автор: JIN, Geun Mo, LEE, Sung Gi, JEONG, Yeon Ho, PARK, Jun Chun, LEE, Sung Gyu, SOUL, Dae Soo
Принадлежит:

The present disclosure relates to a semiconductor light emitting device comprising: a plurality of semiconductor layers including a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light through hole-electron recombination; a reflective film formed on the plurality of semiconductor layers so as to reflect the light generated in the active layer toward the first semiconductor layer; a first electrode part electrically connected to the first semiconductor layer and supplying one of an electron and a hole; a second electrode part electrically connected to the second semiconductor layer and supplying the remaining one of the electron and the hole; and an electrode display part interposed between the plurality of semiconductor layers and the reflective film.

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Номер записи: 36
03-08-2015 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR0101541430B1
Автор: 전수근, 진근모, 이성찬
Принадлежит: 주식회사 세미콘라이트

... 본 개시는 복수의의 반도체층; 성장 기판의 반대 측에서 활성층에서 생성된 빛을 반사하도록 구비되는 반사막; 그리고, 복수의 반도체층에 전자 및 정공을 공급하도록 구비되는 제1 전극 및 제2 전극;으로서, 제1 전극 및 제2 전극 중의 적어도 하나는 주석(Sn)을 함유하는 납땜층과 납땜층의 산화를 방지하도록 납땜층 위에 산화방지층을 구비하는 제1 전극 및 제2 전극;을 포함하는 것을 특징으로 하는 반도체 발광소자에 관한 것이다.

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Номер записи: 37
24-06-2016 дата публикации

SEMICONDUCTOR LIGHT-EMITTING DEVICE

Номер: KR1020160073362A
Автор: PARK, EUN HYUN, JEON, SOO KUN, CHOI, IL GYUN, JIN, GEUN MO
Принадлежит:

The present disclosure relates to a semiconductor light-emitting device comprising: multiple semiconductor layers; a reflection layer arranged at one side of the multiple semiconductor layers and reflecting light generated from an active layer; a first electrode and a second electrode for supplying electrons and holes, wherein either or both of the first electrode and the second electrode are electrically insulated from the multiple semiconductor layers and the first electrode and the second electrode electrically communicate with the multiple semiconductor layers via electrical connections; and a hexahedral growth substrate arranged at the opposite side of the reflection layer with respect to the multiple semiconductor layers, wherein a face of the hexahedron includes: a lower side having the multiple semiconductor layers formed thereon, an upper side facing the lower side and two lateral sides for connecting the lower side and the upper side, and the upper side has a length shorter than ...

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Номер записи: 38
07-02-2018 дата публикации

반도체 발광소자

Номер: KR0101826206B1
Автор: 전수근, 박준천, 진근모, 정연호
Принадлежит: 주식회사 세미콘라이트

... 본 개시는 반도체 발광소자에 있어서, 제1 도전성을 가지는 제1 반도체층, 제1 도전성과 다른 제2 도전성을 가지는 제2 반도체층 및 제1 반도체층과 제2 반도체층 사이에 개재되며 전자와 정공의 재결합을 통해 빛을 생성하는 활성층을 가지는 복수의 반도체층; 활성층에서 생성된 빛을 제1 반도체층 측으로 반사하도록 복수의 반도체층 위에 형성된 비도전성 반사막; 비도전성 반사막의 위에 형성된 절연층; 제1 반도체층과 전기적으로 연결되며 전자와 정공 중 하나를 공급하는 제1 전극부;그리고, 제2 반도체층과 전기적으로 연결되며 전자와 정공 중 나머지 하나를 공급하는 제2 전극부;를 포함하며, 제1 전극부와 제2 전극부 중의 적어도 하나는: 비도전성 반사막과 절연층 사이에 형성되며, 비도전성 반사막 위를 50% 이상 덮는 연결전극;을 포함하는 것을 특징으로 하는 반도체 발광소자에 관한 것이다.

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Номер записи: 39
18-12-2015 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR0101578484B1
Автор: 진근모, 전수근
Принадлежит: 주식회사 세미콘라이트

... 본 개시는 성장 기판을 이용해 순차로 성장되는, 제1 도전성을 가지는 제1 반도체층, 제1 도전성과 다른 제2 도전성을 가지는 제2 반도체층 및 제1 반도체층과 제2 반도체층 사이에 개재되며 전자와 정공의 재결합을 통해 빛을 생성하는 활성층을 가지는 복수의 반도체층; 활성층으로부터의 빛을 제1 반도체층 측으로 반사하도록 제2 반도체층 위에 형성되며, 제1 반도체층측 개구 및 제2 반도체층측 개구가 형성된 비도전성 반사막; 비도전성 반사막과 제2 반도체층 사이에서 뻗으며 제2 반도체층과 전기적으로 연결된 가지 전극; 제1 반도체층측 개구를 통해 제1 반도체층과 전기적으로 연결되는 복수의 제1 전기적 연결; 그리고 제2 반도체층측 개구를 통해 가지 전극과 연결되는 제2 전기적 연결;을 포함하는 것을 특징으로 하는 반도체 발광소자에 관한 것이다.

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Номер записи: 40
04-02-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020160013531A
Автор: PARK, EUN HYUN, JEON, SOO KUN, CHOI, IL GYUN, JIN, GEUN MO
Принадлежит:

Disclosed is a semiconductor light emitting device having increased luminous efficiency, comprising: a plurality of semiconductor layers; a reflective layer provided on one side of the semiconductor layers; a growth substrate having a hexahedral shape; a first electrical connection electrically connected to a first semiconductor layer; and a second electrical connection electrically connected to a second semiconductor layer through an insulating reflective layer and provided to be spaced apart from the first electrical connection in a longitudinal direction of the upper side of another face. The growth substrate has one face and another face. One face has a lower side on which the semiconductor layers are formed, an upper side facing the lower side, and two lateral sides connecting the lower side and the upper side. The upper side has a length of 150 um or less, and another face is continued from one side of one face and has a lower side on which the semiconductor layers are formed and ...

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Номер записи: 41
10-02-2017 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

Номер: KR101704456B1
Автор: JEON, SOO KUN, PARK, JUN CHUN, JIN, GEUN MO
Принадлежит: SEMICON LIGHT CO., LTD.

The preset disclosure relates to a semiconductor device which includes a plurality of semiconductor layers which include a first semiconductor layer which is grown on a substrate and has first conductivity, a second semiconductor layer which has second conductivity which is different from the first conductivity, and an active layer which generates light through recombination of electrons and holes between the first semiconductor layer and the second semiconductor layer; a nonconductive reflection film which is formed to cover the plurality of semiconductor layers; an electrode which is formed on the nonconductive reflection film; and a fixing film which covers a part of the upper side of the electrode and a part of the nonconductive reflection film. Accordingly, the present invention can improve adhesion between the electrode and the nonconductive reflection film through the fixing film. COPYRIGHT KIPO 2017 ...

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Номер записи: 42
07-06-2017 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020170062434A
Автор: PARK, EUN HYUN, JEON, SOO KUN, CHOI, IL GYUN, JIN, GEUN MO
Принадлежит:

The present disclosure relates to a semiconductor light emitting device. The semiconductor light emitting device includes a plurality of semiconductor layers; a reflective layer provided on one side of the plurality of semiconductor layers and reflecting light generated in an active layer; a first electrode and a second electrode which supply electrons and holes, wherein at least one of the first electrode and the second electrode is electrically insulated from the plurality of semiconductor layers and electrically connected to the plurality of semiconductor layers by electrical connection; and a growth substrate having a hexahedron shape provided on the opposite side of the reflective layer with respect to the plurality of semiconductor layers, wherein one surface of the hexahedron is a lower surface on which a plurality of semiconductor layers are formed, an upper surface is opposed to the lower surface, two sides connects the upper surface and the lower surface, and the length of the ...

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Номер записи: 43
10-12-2015 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020150138434A
Автор: JIN, GEUN MO, JEON, SOO KUN
Принадлежит:

The present disclosure relates to a semiconductor light emitting device comprising: a plurality of semiconductor layers which include a first semiconductor layer with first conductivity, a second semiconductor layer with second conductivity which is different from the first conductivity and an active layer which is interposed between the first semiconductor layer and the second semiconductor layer and generates light through the recombination of electrons and holes, and are sequentially grown by using a growth substrate; a non-conductive reflective film which is formed on the semiconductor layers to reflect the light generated in the active layer to the growth substrate; a first electrode which is formed on the non-conductive reflective film and supplies one of the electron and the hole to the first semiconductor layer; and a second electrode which is formed on the non-conductive reflective film to be separated from the first electrode and supplies the other of the electron and the hole ...

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Номер записи: 44
01-08-2017 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR101762259B1
Автор: JEON, SOO KUN, PARK, JUN CHUN, JIN, GEUN MO, JEONG, YEON HO
Принадлежит: SEMICON LIGHT CO., LTD.

According to the present disclosure, provided is a semiconductor light emitting device whose performance is not deteriorated by an impact. The semiconductor light emitting device comprises: a plurality of semiconductor layers including a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer to generate light through recombination of an electron and a hole; a non-conductive reflective film formed on the plurality of semiconductor layers to reflect the light generated in the active layer toward the first semiconductor layer; an insulating layer formed on the non-conductive reflective film; a first electrode unit electrically connected to the first semiconductor layer to supply one of the electron and the hole; and a second electrode unit electrically connected to the second semiconductor layer ...

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Номер записи: 45
13-12-2018 дата публикации

반도체 발광소자

Номер: KR0101928306B1
Автор: 전수근, 박준천, 이성기, 진근모
Принадлежит: 주식회사 세미콘라이트

... 본 개시는 반도체 발광소자에 있어서, 제1 도전성을 가지는 제1 반도체층, 제1 도전성과 다른 제2 도전성을 가지는 제2 반도체층 및 제1 반도체층과 제2 반도체층 사이에 개재되며 전자와 정공의 재결합을 통해 빛을 생성하는 활성층을 가지는 복수의 반도체층; 활성층에서 생성된 빛을 제1 반도체층 측으로 반사하도록 복수의 반도체층 위에 형성된 반사막; 반사막의 위에 형성된 절연층; 제1 반도체층과 전기적으로 연결되며 전자와 정공 중 하나를 공급하는 제1 전극부; 그리고, 제2 반도체층과 전기적으로 연결되며 전자와 정공 중 나머지 하나를 공급하는 제2 전극부;를 포함하며, 제1 전극부는: 절연층 상부에 구비된 제1 패드전극; 반사막과 절연층 사이에 형성되는 제1 연결전극; 그리고 제1 반도체층과 연결되는 제1 하부전극;을 포함하고, 제2 전극부는: 절연층 상부에 구비된 제2 패드전극; 반사막과 절연층 사이에 형성되는 제2 연결전극; 그리고 제2 반도체층과 연결되는 적어도 하나의 제2 하부전극;을 포함하고, 제1 하부전극을 중심으로 적어도 하나의 제2 하부전극이 등거리로 배열되는 반도체 발광소자에 관한 것이다.

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Номер записи: 46
13-07-2017 дата публикации

SEMICONDUCTOR LIGHT-EMITTING ELEMENT

Номер: WO2017119743A1
Автор: JEON, Soo Kun, JIN, Geun Mo, PARK, Jun Chun, JEONG, Yeon Ho, CHOI, Il Gyun
Принадлежит:

The present disclosure relates to a semiconductor light-emitting element, which is a flip chip comprising: a plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer, which is interposed between the first semiconductor layer and the second semiconductor layer and generates light through the recombining of electrons and holes; an insulation layer formed on the plurality of semiconductor layers and including an opening; and an electrode formed on the insulation layer, electrically connected to the plurality of semiconductor layers through the opening, and having an upper surface and a lower surface, wherein the area of the upper surface is smaller than the area of the lower surface.

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Номер записи: 47
12-07-2018 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING STRUCTURE USING SAME

Номер: KR101877747B1
Автор: JIN, GEUN MO
Принадлежит: SEMICON LIGHT CO., LTD.

The present disclosure relates to a semiconductor light emitting device capable of improving the reflectance by enhancing light extraction efficiency. The semiconductor light emitting device includes: a plurality of semiconductor layers including a first semiconductor layer with first conductivity, a second semiconductor layer with second conductivity different from the first conductivity, and an active layer which is interposed between the first semiconductor layer and the second semiconductor layer and generates light through recoupling of an electron and a hole; a non-conductive reflective film formed on the plurality of semiconductor layers and including an opening; a first electrode formed on the non-conductive reflective film and electrically connected to the first semiconductor layer through the opening; a second electrode formed on the non-conductive reflective film and electrically connected to the second semiconductor layer through the opening; and a block interposed between the ...

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Номер записи: 48
05-07-2017 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020170077094A
Автор: JEON, SOO KUN, JIN, GEUN MO
Принадлежит:

Disclosed is a semiconductor light emitting device which comprises: a plurality of semiconductor layers which have a first conductive layer with first conductivity, a second conductive layer with second conductivity, and an active layer interposed between the first conductive layer and the second conductive layer and generating light through reunion of electrons and electron holes, and are provided to grow using a growth substrate; an insulating reflective film bonded to the semiconductor layers on the opposite side to the growth substrate; and first and second electrodes electrically connected with the plurality of semiconductor layers and arranged to be opposite to each other on the insulating reflective film, wherein at least one of the first and second electrodes comprise a plurality of sub electrodes and at least one connection units which connect the sub electrodes, and with respect to a direction orthogonal to the connection direction, each of the connection units has a width smaller ...

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Номер записи: 49
15-02-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020160016981A
Автор: PARK, EUN HYUN, JEON, SOO KUN, CHOI, IL GYUN, JIN, GEUN MO
Принадлежит:

Disclosed is a semiconductor light emitting device having increased luminance efficiency, comprising: a plurality of light emitting units having a plurality of semiconductor layers and a reflective layer; a first electrode electrically connected to a first semiconductor layer; a second electrode electrically connected to a second semiconductor layer; and a growth substrate provided on the opposite side of the reflective layer with respect to the semiconductor layers and having a hexahedral shape. The growth substrate has a face and another face. The face has a lower side on which the semiconductor layers are formed, an upper side facing the lower side, and two lateral sides connecting the lower side and the upper side. Another face is continued from one side of the face and has a lower side on which the semiconductor layers are formed and an upper side which faces the lower side. The upper side of another face is longer than the upper side of the face. The light emitting units are arranged ...

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Номер записи: 50
07-11-2018 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020180121108A
Автор: JEON, SOO KUN, PARK, JUN CHUN, JIN, GEUN MO, JEONG, YEON HO
Принадлежит:

The present disclosure relates to a semiconductor light emitting device which includes: a plurality of semiconductor layers which have a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer interposed between the first and second semiconductor layers and generating light through recombination of electrons and holes; a reflective film which is formed on the plurality of semiconductor layers to reflect light generated in the active layer toward the first semiconductor layer; an insulation layer which is formed on the reflective film; a first electrode unit which is electrically connected to the first semiconductor layer and supplies one between electrons and holes; and a second electrode unit which is electrically connected to the second semiconductor layer and supplies the other one between electrons and holes. The first electrode unit includes: a first pad electrode provided ...

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Номер записи: 51
08-05-2018 дата публикации

반도체 발광소자

Номер: KR0101855188B1
Автор: 전수근, 김태현, 진근모, 최일균
Принадлежит: 주식회사 세미콘라이트

... 본 개시는 반도체 발광소자에 있어서, 제1 도전성을 가지는 제1 반도체층, 제1 도전성과 다른 제2 도전성을 가지는 제2 반도체층, 및 제1 반도체층과 제2 반도체층의 사이에 개재되어 전자와 정공의 재결합에 의해 빛을 생성하는 활성층을 가지는 복수의 반도체층; 복수의 반도체층의 일 측에 구비되며, 제1 반도체층에 전자와 정공 중 하나를 공급하는 제1 전극; 복수의 반도체층의 일 측에 구비되며, 제2 반도체층에 전자와 정공 중 나머지 하나를 공급하는 제2 전극; 그리고 제1 전극과 제2 전극 사이에 형성된 둑(bank);으로서, 제1 전극 및 제2 전극과 전기적으로 분리된 둑;을 포함하는 것을 특징으로 하는 반도체 발광소자에 관한 것이다.

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Номер записи: 52
12-04-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR0101611479B1
Автор: 박은현, 전수근, 최일균, 진근모
Принадлежит: 주식회사 세미콘라이트

... 본 개시는 반도체 발광소자에 있어서, 복수의 반도체층; 복수의 반도체층의 일 측에 구비된 반사층; 육면체 형상을 가지는 성장 기판;으로서, 일면(a face) 및 타면(another face)을 포함하며, 일면이 복수의 반도체층이 형성되는 하면(a lower side), 하면과 대향하는 상면(an upper side), 및 하면과 상면 이어주는 두 개의 측면(lateral sides)을 가지고, 상면이 150㎛이하의 길이를 가지며, 타면은 상기 일면의 일 측면으로부터 이어지며, 복수의 반도체층이 형성되는 하면(a lower side) 및 하면과 대향하는 상면(an upper side)을 가지고, 타면의 상면은 상기 일면의 상면보다 긴 성장 기판; 제1 반도체층과 전기적으로 연통된 제1 전기적 연결(a first electrical connection); 그리고 절연성 반사층을 관통하여 제2 반도체층과 전기적으로 연통되며, 제1 전기적 연결로부터 타면의 상면의 길이방향으로 떨어져 구비되는 제2 전기적 연결(a second electrical connection);을 포함하는 것을 특징으로 하는 반도체 발광소자에 관한 것이다.

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Номер записи: 53
20-01-2017 дата публикации

반도체 발광소자

Номер: KR0101697960B1
Автор: 진근모
Принадлежит: 주식회사 세미콘라이트

... 본 개시는 반도체 발광소자에 있어서, 제1 도전성을 가지는 제1 반도체층, 제1 도전성과 다른 제2 도전성을 가지는 제2 반도체층, 및 제1 반도체층과 제2 반도체층의 사이에 개재되어 전자와 정공의 재결합에 의해 빛을 생성하는 활성층을 가지는 복수의 반도체층; 식각되어 노출된 제1 반도체층에 형성된 제1 연장형 전극; 제1 연장형 전극을 덮도록 복수의 반도체층 위에 형성되어 활성층으로부터의 빛을 반사하는 절연성 반사막; 절연성 반사막 위에 형성되며, 제1 연장형 전극을 통해 제1 반도체층에 전자와 정공 중 하나를 공급하는 제1 전극; 그리고 절연성 반사막 위에서 형성되며, 제2 반도체층에 전자와 정공 중 나머지 하나를 공급하는 제2 전극;을 포함하며, 평면도로 볼 때, 제1 연장형 전극은 제2 전극과 중첩되지 않으며, 제1 전극과 제2 전극 사이에서 뻗는 것을 특징으로 하는 반도체 발광소자에 관한 것이다.

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Номер записи: 54
27-01-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020160009787A
Автор: PARK, EUN HYUN, JEON, SOO KUN, CHOI, IL GYUN, JIN, GEUN MO
Принадлежит:

A semiconductor light emitting device of the present disclosure comprises: light emitting parts including semiconductor layers and a reflection layer; a first electrode connected electrically to a first semiconductor layer; a second electrode connected electrically to a second semiconductor layer; and a growth substrate disposed to be opposite to the reflection layer based on the semiconductor layers and having a hexahedral shape, wherein the growth substrate includes a face and another face. The face includes a lower side on which the semiconductor layers are formed, an upper side facing the lower side and two lateral sides connecting the lower side to the upper side. The another face is extended from one side of the face. The another face includes a lower side on which the semiconductor layers are formed and an upper side facing the lower side. The upper side of another face is longer than the upper side of the face. The light emitting parts are disposed in a line in the longitudinal ...

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Номер записи: 55
27-01-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020160009786A
Автор: PARK, EUN HYUN, JEON, SOO KUN, CHOI, IL GYUN, JIN, GEUN MO
Принадлежит:

A semiconductor light emitting device of the present disclosure comprises: semiconductor layers; a reflection layer disposed on one side of the semiconductor layers; a growth substrate with a hexahedral shape, wherein the growth substrate includes a face and another face, the face includes a lower side on which the semiconductor layers are formed, an upper side facing the lower side and two lateral sides connecting the lower side to the upper side, the upper side has a length of 150μm or less, the another face is extended from one side of the face, the another face includes a lower side on which the semiconductor layers are formed and an upper side facing the lower side, the upper side of the another face is longer than the upper side of the face; a first electrical connection connected electrically to a first semiconductor layer; and a second electrical connection connected electrically to a second semiconductor layer through an insulated reflection layer and separated from the first electrical ...

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Номер записи: 56
17-12-2015 дата публикации

SEMICONDUCTOR LIGHT-EMITTING ELEMENT

Номер: WO2015190817A1
Автор: JEON, Soo Kun, KIM, Tae Hyun, KIM, Tea Jin, BAEK, Seung Ho, CHOI, Il Gyun, JIN, Geun Mo
Принадлежит:

The present disclosure relates to a semiconductor light-emitting element, which comprises: a first light-emitting part, a second light-emitting part, and a third light-emitting part, wherein each of the light-emitting parts includes multiple semiconductor layers including a first semiconductor layer, an active layer, and a second semiconductor layer, laminated in sequence, the first semiconductor layer having a first conductivity, the active layer generating light through the recombination of an electron and a hole, and the second semiconductor layer having a second conductivity different from the first conductivity; a non-conductive reflecting film which is formed to cover the multiple semiconductor layers and reflects light generated from the active layer; a first electrode which is provided to electrically communicate with the first semiconductor layer of the first light-emitting part and which supplies one of an electron and a hole; a second electrode which is provided to electrically ...

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Номер записи: 57
04-01-2017 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020170000893A
Автор: JIN, GEUN MO, KIM, TAE HYUN
Принадлежит:

The present invention relates to a semiconductor light emitting device which includes: a plurality of semiconductor layers including a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer interposed between the first and second semiconductor layers to generate light through the recombination of a hole and an electron, wherein a plurality of grooves are formed on the plurality of semiconductor layers to expose the first semiconductor layer from the second semiconductor layer; an insulating layer stretching on the second semiconductor layer, extended to a side of each of the grooves, and exposing the first semiconductor layer of each of the grooves; a connection electrode stretching on the insulating layer, and electrically connected to the first semiconductor layer of each of the grooves to supply one of an electron and a hole; and a contact electrode formed on the second semiconductor ...

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Номер записи: 58
12-04-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR0101611480B1
Автор: 전수근, 최일균, 진근모
Принадлежит: 주식회사 세미콘라이트

... 본 개시는 반도체 발광소자에 있어서, 성장 기판에 순차로 형성된 제1 도전성을 가지는 제1 반도체층, 제1 도전성과 다른 제2 도전성을 가지는 제2 반도체층 및 제1 반도체층과 제2 반도체층 사이에 개재되며 전자와 정공의 재결합을 통해 빛을 생성하는 활성층을 가지는 복수의 반도체층; 활성층에서 생성된 빛을 성장 기판 측으로 반사하도록 복수의 반도체층 위에 형성된 비도전성 반사막; 비도전성 반사막 위에 형성되며, 제1 반도체층과 전기적으로 연통하며 전자와 정공 중 하나를 공급하는 제1 전극; 그리고 비도전성 반사막 위에 제1 전극과 대향하게 형성되며, 제2 반도체층과 전기적으로 연통하며 전자와 정공 중 나머지 하나를 공급하는 제2 전극;을 포함하며, 제1 전극 및 제2 전극이 사이 간격이 80㎛ 이상이고, 평면도(top view) 상으로 관찰할 때, 반도체 발광소자의 평면적에 대한 제1 전극 및 제2 전극을 합한 면적의 비율은 0.7 이하인 것을 특징으로 하는 반도체 발광소자에 관한 것이다.

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Номер записи: 59
29-08-2018 дата публикации

SEMICONDUCTOR LIGHT EMITTING ELEMENT

Номер: KR1020180096546A
Автор: JEON, SOO KUN, PARK, JUN CHUN, JIN, GEUN MO, JEONG, YEON HO
Принадлежит:

The present invention relates to a semiconductor light emitting element. The semiconductor light emitting element comprises: a plurality of semiconductor layers having a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and generating light through recombination of electrons and holes; a non-conductive reflective film formed on the plurality of semiconductor layers to reflect the light generated in the active layer toward the first semiconductor layer; an insulating layer formed on the non-conductive reflective film; a first electrode part electrically connected to the first semiconductor layer and supplying one of electrons and holes; and a second electrode part electrically connected to the second semiconductor layer and supplying the remaining one of electrons and holes. At least one ...

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Номер записи: 60
10-06-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR0101628241B1
Автор: 진근모, 백승호
Принадлежит: 주식회사 세미콘라이트

... 본 개시는 반도체 발광소자에 있어서, 제1 도전성을 가지는 제1 반도체층, 제1 도전성과 다른 제2 도전성을 가지는 제2 반도체층 및 제1 반도체층과 제2 반도체층 사이에 개재되며 전자와 정공의 재결합을 통해 빛을 생성하는 활성층을 가지는 복수의 반도체층; 제1 반도체층과 전기적으로 연통하며 전자와 정공 중 하나를 공급하는 제1 전극부; 제2 반도체층과 전기적으로 연통하며 전자와 정공 중 나머지 하나를 공급하는 제2 전극부; 활성층에서 생성된 빛을 제1 반도체층 측으로 반사하도록 복수의 반도체층 위에 형성되며, 개구가 형성된 비도전성 반사막; 그리고 비도전성 반사막을 투과한 빛을 제1 반도체층 측으로 반사하도록 비도전성 반사막 위에 형성된 추가의 반사막;을 포함하며, 제1 전극부와 제2 전극부 중의 적어도 하나는: 개구에 의해 적어도 일부가 노출되며, 복수의 반도체층과 전기적으로 연결되는 하부전극; 그리고 비도전성 반사막과 추가의 반사막 사이에 형성되며, 개구를 통해 하부전극과 전기적으로 연결되는 연결전극;을 포함하는 것을 특징으로 하는 반도체 발광소자에 관한 것이다.

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Номер записи: 61
05-07-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR101635907B1
Автор: JIN, GEUN MO, LEE, SUNG CHAN
Принадлежит: SEMICON LIGHT CO., LTD.

Disclosed is a semiconductor light emitting device capable of reducing a loss of light absorption due to metal. The semiconductor light emitting device comprises: a plurality of semiconductor layers; a nonconductive reflection film formed on the semiconductor layers to reflect light from an active layer; a first electrode and a second electrode formed to be spaced apart from the nonconductive reflection film; at least one first electric connection unit electrically connecting the first electrode with a first semiconductor layer by penetrating through the nonconductive reflection film; at least one electric connection unit electrically connecting the second electrode with a second semiconductor layer by penetrating through the nonconductive reflection film; a first branch electrode formed on the first semiconductor layer to be connected with a first electrical connection unit and extending between the first electrode and the second electrode from the bottom of a corner adjacent to the second ...

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Номер записи: 62
12-12-2018 дата публикации

반도체 발광소자

Номер: KR0101928313B1
Автор: 전수근, 박준천, 진근모, 정연호
Принадлежит: 주식회사 세미콘라이트

... 본 개시는 반도체 발광소자에 있어서, 제1 도전성을 가지는 제1 반도체층, 제1 도전성과 다른 제2 도전성을 가지는 제2 반도체층 및 제1 반도체층과 제2 반도체층 사이에 개재되며 전자와 정공의 재결합을 통해 빛을 생성하는 활성층을 가지는 복수의 반도체층; 활성층에서 생성된 빛을 제1 반도체층 측으로 반사하도록 복수의 반도체층 위에 형성된 반사막; 반사막의 위에 형성된 절연층; 제1 반도체층과 전기적으로 연결되며 전자와 정공 중 하나를 공급하는 제1 전극부; 그리고, 제2 반도체층과 전기적으로 연결되며 전자와 정공 중 나머지 하나를 공급하는 제2 전극부;를 포함하며, 제1 전극부는: 절연층 상부에 구비된 제1 패드전극; 반사막과 절연층 사이에 형성되는 제1 연결전극; 제1 반도체층과 연결되는 제1 하부전극; 그리고, 제1 하부전극과 제1 연결전극을 연결하는 제1 하부전기적연결;을 포함하고, 제2 전극부는: 절연층 상부에 구비된 제2 패드전극; 반사막과 절연층 사이에 형성되는 제2 연결전극; 제2 반도체층과 연결되는 제2 하부전극; 그리고, 제2 하부전극과 제2 연결전극을 연결하는 제2 하부전기적연결;을 포함하고, 제1 패드전극 및 제2 패드전극은 제1 하부전기적연결에 대응되는 복수의 개구를 포함하는 반도체 발광소자에 관한 것이다.

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Номер записи: 63
16-04-2015 дата публикации

SEMICONDUCTOR LIGHT-EMITTING DIODE

Номер: WO2015053595A1
Автор: JEON, Soo Kun, JIN, Geun Mo
Принадлежит:

The present disclosure relates to a semiconductor light-emitting diode comprising: a plurality of semiconductor layers sequentially grown by using a growth substrate; a first electrode portion which electrically communicates with a first semiconductor layer and supplies electrons or electron holes; a second electrode portion which electrically communicates with a second semiconductor layer and supplies remaining electrons or electron holes not supplied by the first electrode portion; and a nonconductive reflective film provided with an opening, wherein either the first electrode portion or the second electrode portion comprises a lower electrode of which a portion is exposed through the opening, an upper electrode provided on top of the nonconductive reflective film, and an electric connection which comes into contact with the lower electrode by penetrating through the opening and electrically communicates with the upper electrode.

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Номер записи: 64
12-09-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR101652351B1
Автор: JEON, SOO KUN, JIN, GEUN MO, LEE, SUNG CHAN
Принадлежит: SEMICON LIGHT CO., LTD.

The present disclosure relates to a semiconductor light emitting device coupled to an external electrode, and inspected by a probe. The semiconductor light emitting device comprises: a plurality of semiconductor layers having a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer interposed between the first and second semiconductor layers and generating light by an electron and a hole; and an electrode for supplying either the electrode or the hole to the plurality of semiconductor layers. The electrode includes: a bonding layer coupled to the external electrode; and a probe inspecting layer of which at least a part is exposed from the bonding layer while being viewed as a plane figure. The semiconductor light emitting device has an electrode structure with improved adhesion on the external electrode and improved stability in an electrical contact on the probe. COPYRIGHT KIPO ...

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Номер записи: 65
21-01-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020160008031A
Автор: PARK, EUN HYUN, JEON, SOO KUN, CHOI, IL GYUN, JIN, GEUN MO
Принадлежит:

The present disclosure relates to a light emitting device which comprises: a plurality of semiconductor layers; a reflective layer provided one side of the semiconductor layers, and reflecting light generated in an active layer; a first electrode and a second electrode for supplying an electrode and a hole wherein at least one of the first electrode and the second electrode is electrically insulated from the semiconductor layers, and the first electrode and the second electrode electrically communicate with the semiconductor layers by an electrical connection; and a growing substrate provided in the opposite side of the reflective layer on the basis of the semiconductor layers, and having a hexahedron shape, wherein one surface of the hexahedron has a lower surface having semiconductor layers formed thereon, an upper layer facing the lower layer, and two side surfaces for connecting the lower surface and the upper surface, and the upper surface has the length of 150 μm or smaller. COPYRIGHT ...

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Номер записи: 66
05-02-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR0101591969B1
Автор: 백승호, 진근모, 전수근
Принадлежит: 주식회사 세미콘라이트

... 본 개시는 반도체 발광소자에 있어서, 제1 도전성을 가지는 제1 반도체층, 제1 도전성과 다른 제2 도전성을 가지는 제2 반도체층 및 제1 반도체층과 제2 반도체층 사이에 개재되며 전자와 정공의 재결합을 통해 빛을 생성하는 활성층을 가지는 복수의 반도체층; 제1 반도체층과 전기적으로 연통하며 전자와 정공 중 하나를 공급하는 제1 전극부; 제2 반도체층과 전기적으로 연통하며 전자와 정공 중 나머지 하나를 공급하는 제2 전극부; 그리고 활성층에서 생성된 빛을 제1 반도체층 측으로 반사하도록 복수의 반도체층 위에 형성되며, 제1 개구가 형성된 비도전성 반사막;을 포함하며, 제1 전극부와 제2 전극부 중의 적어도 하나는: 제1 개구에 대응하는 섬형(island type) 하부전극;으로서, 제1 개구에 의해 적어도 일부가 노출되는 하부전극; 그리고 비도전성 반사막 위에 구비되며, 제1 개구를 통해 하부전극과 전기적으로 연결되는 연결전극;을 구비하는 것을 특징으로 하는 반도체 발광소자에 관한 것이다.

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Номер записи: 67
20-06-2018 дата публикации

반도체 발광소자

Номер: KR0101868518B1
Автор: 전수근, 박준천, 진근모, 정연호
Принадлежит: 주식회사 세미콘라이트

... 본 개시는 반도체 발광소자에 있어서, 제1 도전성을 가지는 제1 반도체층, 제1 도전성과 다른 제2 도전성을 가지는 제2 반도체층 및 제1 반도체층과 제2 반도체층 사이에 개재되며 전자와 정공의 재결합을 통해 빛을 생성하는 활성층을 가지는 복수의 반도체층; 활성층에서 생성된 빛을 제1 반도체층 측으로 반사하도록 복수의 반도체층 위에 형성된 비도전성 반사막; 도전성 반사막의 위에 형성된 절연층; 제1 반도체층과 전기적으로 연결되며 전자와 정공 중 하나를 공급하는 제1 전극부;그리고, 제2 반도체층과 전기적으로 연결되며 전자와 정공 중 나머지 하나를 공급하는 제2 전극부;를 포함하며, 제1 전극부는: 절연층 상부에 구비된 제1 패드전극; 비도전성 반사막과 절연층 사이에 형성되는 제1 연결전극; 제1 반도체층과 연결되는 제1 하부전극;그리고, 제1 하부전극과 제1 연결전극을 연결하는 제1 하부전기적연결;을 포함하고, 제2 전극부는: 절연층 상부에 구비된 제2 패드전극; 비도전성 반사막과 절연층 사이에 형성되는 제2 연결전극; 제2 반도체층과 연결되는 제2 하부전극;그리고, 제2 하부전극과 제2 연결전극을 연결하는 제2 하부전기적연결;을 포함하고, 평면도 상에서 제1 패드전극은 제2 하부전기적연결을 피해서 형성되는 것 및 제2 패드전극은 제1 하부전기적연결을 피해서 형성되는 것 중 적어도 하나인 반도체 발광소자에 관한 것이다.

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Номер записи: 68
28-03-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING ELEMENT

Номер: KR1020160033680A
Автор: JIN, GEUN MO, BAEK, SEUNG HO
Принадлежит:

The present invention relates to a semiconductor light emitting element comprising a plurality of semiconductor layers, each of which has a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer disposed between the first semiconductor layer and the second semiconductor layer and generating light through the recombination of electrons and holes; a first electrode part which is electrically connected to the first semiconductor layer and supplies one of electrons and holes; a second electrode part which is electrically connected to the second semiconductor layer and supplies the other of the electrons and holes; a non-conductive reflective film which is formed on the plurality of semiconductor layers to reflect the light generated from the active layer toward the first semiconductor layer and has an opening; and an additional reflective film which is formed on the non-conductive ...

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Номер записи: 69
16-03-2018 дата публикации

SEMICONDUCTOR LIGHT EMITTING ELEMENT

Номер: KR1020180028083A
Автор: JEON, SOO KUN, PARK, JUN CHUN, JIN, GEUN MO, JEONG, YEON HO
Принадлежит:

The present invention relates to a semiconductor light emitting element. The semiconductor light emitting element comprises: a plurality of semiconductor layers including a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer interposed between the first and second semiconductor layers and generating a light by recoupling of electron and a hole; a non-conductive reflecting film formed on a plurality of semiconductor layers to reflect the light generated in the active layer toward the first semiconductor layers; an insulating layer formed on the conductive reflective film; a first electrode part electrically connected with the first semiconductor layer and supplying one of the electron and the hole; and a second electrode part electrically connected with the second semiconductor layer and supplying the other one of the electron and the hole. The first electrode part includes ...

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Номер записи: 70
12-04-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR0101611477B1
Автор: 박은현, 전수근, 최일균, 진근모
Принадлежит: 주식회사 세미콘라이트

... 본 개시는 반도체 발광소자에 있어서, 복수의 반도체층과 반사층을 가지는 복수의 발광부; 제1 반도체층과 전기적으로 연통하도록 구비된 제1 전극; 제2 반도체층과 전기적으로 연통하도록 구비된 제2 전극;그리고 복수의 반도체층을 기준으로 반사층의 반대 측에 구비되며, 육면체 형상을 가지는 성장 기판;으로서, 일면(a face) 및 타면(another face)을 포함하며, 일면이 복수의 반도체층이 형성되는 하면(a lower side), 하면과 대향하는 상면(an upper side), 및 하면과 상면 이어주는 두 개의 측면(lateral sides)을 가지고, 타면은 일면의 일 측면으로부터 이어지며, 복수의 반도체층이 형성되는 하면(a lower side) 및 하면과 대향하는 상면(an upper side)을 가지고, 타면의 상면은 일면의 상면보다 긴 성장 기판;을 포함하며, 복수의 발광부가 타면의 상면의 길이 방향으로 일렬로 배열되며, 타면의 상면의 길이 방향으로 각 발광부의 길이(P)는 일면의 상면의 길이 방향으로 각 발광부의 길이(W)보다 긴 것을 특징으로 하는 반도체 발광소자에 관한 것이다.

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Номер записи: 71
08-05-2018 дата публикации

반도체 발광소자

Номер: KR0101855202B1
Автор: 전수근, 진근모
Принадлежит: 주식회사 세미콘라이트

... 본 개시는 반도체 발광소자에 있어서, 제1 도전성을 가지는 제1 반도체층, 제1 도전성과 다른 제2 도전성을 가지는제2 반도체층, 제1 반도체층과 제2 반도체층 사이에 개재되며 전자와 정공의 재결합을 통해 빛을 생성하는 활성층을 구비하며, 성장 기판을 이용하여 성장되는 복수의 반도체층; 성장 기판의 반대 측에서 복수의 반도체층에 결합되는 절연성 반사막; 그리고 복수의 반도체층과 전기적으로 연결되며, 절연성 반사막 위에 서로 대향하게 형성되는 제1 전극 및 제2 전극;으로서, 적어도 하나가 복수의 서브 전극과 복수의 서브 전극을 연결하는 적어도 하나의 연결부를 가지며, 연결 방향과 직교하는 방향을 기준으로 각 연결부는 각 연결부에 의해 연결되는 각 서브 전극보다 작은 폭을 가지는 제1 전극 및 제2 전극을 포함하는 것을 특징으로 하는 반도체 발광소자에 관한 것이다.

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Номер записи: 72
11-10-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020160117682A
Автор: JEON, SOO KUN, JIN, GEUN MO
Принадлежит:

The present disclosure relates to a semiconductor light emitting device comprising: a plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity which is different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer to generate light through the recombination of electrons and holes, wherein the plurality of semiconductor layers are grown using a growth substrate; an insulating reflection film coupled with the plurality of semiconductor layers on the opposite side of the growth substrate; and a first electrode and a second electrode electrically connected to the plurality of semiconductor layers and formed to face one another on the insulating reflection film, wherein at least one of the first electrode and the second electrode includes at least one connection unit to connect a plurality of sub electrodes with ...

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Номер записи: 73
17-06-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020160070047A
Автор: PARK, EUN HYUN, JEON, SOO KUN, CHOI, IL GYUN, JIN, GEUN MO
Принадлежит:

Disclosed is a semiconductor light emitting device, comprising: a plurality of semiconductor layers; a reflection layer disposed on one side of the semiconductor layers, and reflecting light generated in an active layer; a first electrode and a second electrode for supplying an electron and a hole, wherein at least one of the first electrode and the second electrode is electrically insulated from the semiconductor layers, and electrically communicates with the semiconductor layers by an electrical connection; and a growth substrate having the length of more than or equal to 75um and equal to or less than 200um such that increase of light extraction efficiency compensates for decrease of inner quantum efficiency, compared to external quantum efficiency when an upper surface thereof has the length of 200um. According to the semiconductor light emitting device of the present invention, absorption of light in the semiconductor light emitting device is reduced, thereby improving the light extraction ...

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Номер записи: 74
19-08-2015 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020150094010A
Автор: JIN, GEUN MO, JEON, SOO KUN
Принадлежит:

The present invention relates to a semiconductor light emitting device. The semiconductor light emitting device comprises: a plurality of semiconductor layers sequentially grown using a growth substrate and having a first semiconductor layer having a first conductivity and having a second semiconductor layer having a second conductivity different from the first conductivity and having an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light through recombination of an electron and a hole; a nonconductive reflection layer formed above the semiconductor layer to reflect light emitted from the active layer to a first semiconductor layer side and having an opening of the first semiconductor layer and having the opening of the second semiconductor layer; a branched finger electrode extended between the nonconductive reflection layer and the second semiconductor layer and electrically connected with the second semiconductor layer ...

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Номер записи: 75
23-07-2015 дата публикации

SEMICONDUCTOR LIGHT EMITTING DIODE

Номер: KR1020150085404A
Автор: JEON, SOO KUN, JIN, GEUN MO, LEE, SUNG CHAN
Принадлежит:

The present invention relates to a semiconductor light emitting diode comprising: a plurality of semiconductor layers; a reflection film reflecting light generated from an active layer at the opposite side of a growing substrate; and a first electrode and a second electrode supplying an electron and a hole to the semiconductor layers. Either the first electrode or the second electrode has a soldering layer containing tin (Sn) and an oxidation preventing layer above the soldering layer to prevent oxidation of the soldering layer. COPYRIGHT KIPO 2015 ...

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Номер записи: 76
18-04-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020160041142A
Автор: JIN, GEUN MO, JEON, SOO KUN, PARK, JUN CHUN
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Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes: a plurality of semiconductor layers having a first semiconductor layer, a second semiconductor layer, and an active layer; a first electrode part for supplying one of an electron and a hole to the first semiconductor layer, and a second electrode part for supplying the other of the electron and the hole to the second semiconductor layer; and an insulating reflection layer formed on the multiple semiconductor layers, for reflecting light emitted from the active layer, wherein at least one of the first electrode part and the second electrode part includes: an upper electrode formed on the insulating reflection layer; an island type ohmic electrode, a connection type ohmic electrode, and a branch electrode branched out from the connection type ohmic electrode to electrically communicate with the multiple semiconductor layers under the insulating reflection layer; and an electrical connection ...

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Номер записи: 77
03-06-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR0101626905B1
Автор: 진근모, 전수근
Принадлежит: 주식회사 세미콘라이트

... 본 개시는 반도체 발광소자에 있어서, 제1 반도체층, 제2 반도체층, 및 활성층을 가지는 복수의 반도체층; 제1 전극부; 제2 전극부; 그리고 복수의 반도체층 위에 형성되며, 활성층으로부터의 빛을 반사하는 절연성 반사층;을 포함하며, 제1 전극부와 제2 전극부 중 적어도 하나는: 절연성 반사층 위에 형성된 제1 상부 전극; 제1 상부 전극 아래에서 제1 상부 전극 바깥으로 뻗는 제1 가지 전극; 절연성 반사층을 관통하며 제1 상부 전극과 제1 가지 전극을 연결하는 제1 전기적 연결; 그리고 절연성 반사층을 관통하며 제1 상부 전극과 복수의 반도체층을 전기적으로 연통하되, 제1 가지 전극의 연장선상에서 벗어나 있는 제2 전기적 연결;을 포함하는 것을 특징으로 하는 반도체 발광소자에 관한 것이다.

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Номер записи: 78