Ultraviolet illuminator

A solution for disinfecting an area using ultraviolet radiation is provided. The solution can include an enclosure including at least one ultraviolet transparent window and a set of ultraviolet radiation sources located adjacent to the at least one ultraviolet transparent window. The set of ultraviolet radiation sources can be configured to generate ultraviolet radiation directed through the at least one ultraviolet transparent window. An input unit can be located on the enclosure and configured to generate an electrical signal in response to pressure applied to the enclosure. A control unit can be configured to manage the ultraviolet radiation by monitoring the electrical signal generated by the input unit and controlling, based on the monitoring, the ultraviolet radiation generated by the set of ultraviolet radiation sources.

Storage Device Including Ultraviolet Illumination

Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration. 1. A system comprising:a storage device including a storage area for containing at least one item, wherein the storage area includes at least one shelf for holding the at least one item;a set of ultraviolet radiation sources configured to generate ultraviolet radiation into the storage area;a set of sensing devices configured to monitor a set of current conditions of at least one of: the storage area or the at least one item; anda control system configured to control the set of ultraviolet radiation sources based on the set of current conditions.2. The system of claim 1 , wherein the set of sensing devices includes a load sensor configured to detect a weight distribution of the at least one item on the at least one shelf.3. The system of claim 2 , wherein the set of sensing devices further includes a visual camera configured to capture an image of the at least one item for processing by the control system.4. The system of claim 3 , wherein the control system is configured to recognize the at least one item based on the weight distribution from the load sensor and the image from the visual camera and control the set of ultraviolet radiation sources based on a recognition of the at least one item.5. The system of claim 4 , wherein the set of sensing devices includes a humidity sensor configured to detect a humidity ...

Storage device including ultraviolet illumination

Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration.

Multi-wafer reactor

A solution for manufacturing semiconductors is provided. An embodiment provides a chemical vapor deposition reactor, which includes a chemical vapor deposition chamber. A substrate holder located in the chemical vapor deposition chamber can be rotated about its own axis at a first angular speed, and a gas injection component located in the chemical vapor deposition chamber can be rotated about an axis of the gas injection component at a second angular speed. The angular speeds are independently selectable and can be configured to cause each point on a surface of a substrate wafer to travel in an epicyclical trajectory within a gas flow injected by the gas injection component. An angle between the substrate holder axis and the gas injection component axis and/or a distance between the substrate holder axis and the gas injection component axis can be controlled variables.

Methods, wires, and apparatus for slicing hard materials

Methods, wires, and apparatus for use in cutting (e.g., slicing) hard, brittle materials is provided. The wire can be a super-abrasive wire that includes a wire core and super-abrasive particles bonded to the wire core via a metal bonding layer. This wire, or another type of wire, can be used to slice workpieces useful for producing wafers. The workpieces can be aligned within a holder to produce wafers using the device and methods presently provided. The holder rotates about its central axis, which translates to workpieces moving in orbit around this axis. A single abrasive wire, or multiple turns of wire stretched tightly between wire guides, is then contacted with the rotating holder to slice the workpieces.

Method of Fabricating a Light Emitting Device with Optical Element

A solution for packaging an optoelectronic device by aligning an optical element with respect to the package is provided. After initial placement of the optical element on the device package, an emitted light pattern can be measured and compared to a target light pattern. Subsequently, the position of the optical element can be adjusted. The emitted light pattern can be repeatedly compared to the target light pattern until the emitted light pattern is within an acceptable range of error and the optical element can be secured to the device package. 1. A method of packaging an optoelectronic device , the method comprising:mounting an optical element over an opening in a casing, wherein the casing encloses the optoelectronic device mounted on a submount;sensing an emitted light pattern emitted from the optoelectronic device through the optical element;comparing the emitted light pattern to a target light pattern to determine a difference between the emitted light pattern and the target light pattern;adjusting, in response to the difference being greater than an acceptable range of error, a position of the optical element over the opening; andsecuring, in response to the difference being less than or equal to the acceptable range of error, the optical element to the casing.2. The method of claim 1 , wherein the optoelectronic device is a light emitting diode.3. The method of claim 1 , wherein the optical element includes a lip extension with a set of ferromagnetic regions.4. The method of claim 3 , wherein the adjusting includes using a magnetic force to move the optical element.5. The method of claim 1 , further comprising applying an adhesive material between the optical element and the casing.6. The method of claim 5 , wherein the securing includes emitting light from the optoelectronic device in order for the adhesive to cure and harden.7. The method of claim 1 , wherein the optical element is mounted on a movable platform claim 1 , wherein the movable platform is ...

Material Growth with Temperature Controlled Layer

A metal-organic chemical vapor deposition (MOCVD) growth with temperature controlled layer is described. A substrate or susceptor can have a temperature controlled layer formed thereon to adjust the temperature uniformity of a MOCVD growth process used to epitaxially grow semiconductor layers. In one embodiment, the substrate and/or the susceptor can be profiled with a shape that improves temperature uniformity during the MOCVD growth process. The profiled shape can be formed with material that provides a desired temperature distribution to the substrate that is in accordance with a predetermined temperature profile for the substrate for a particular MOCVD process.

METHODS, WIRES, AND APPARATUS FOR SLICING HARD MATERIALS

Methods, wires, and apparatus for use in cutting (e.g., slicing) hard, brittle materials is provided. The wire can be a super-abrasive wire that includes a wire core and super-abrasive particles bonded to the wire core via a metal bonding layer. This wire, or another type of wire, can be used to slice workpieces useful for producing wafers. The workpieces can be aligned within a holder to produce wafers using the device and methods presently provided. The holder rotates about its central axis, which translates to workpieces moving in orbit around this axis. A single abrasive wire, or multiple turns of wire stretched tightly between wire guides, is then contacted with the rotating holder to slice the workpieces. 120.-. (canceled)21. A composite super-abrasive wire for cutting hard materials , the composite super-abrasive wire comprising:a wire core;super-abrasive particles disposed around the wire core, the super-abrasive particles (i) being plated with a solderable metal material comprising at least one of tin, copper, lead, indium, silver, or bismuth, or (ii) consisting essentially of unplated diamond, boron nitride, alumina, silicon carbide, or a mixture thereof; anda metal bonding layer bonding the super-abrasive particles around the wire core, wherein the metal bonding layer comprises a soldering alloy.22. The composite super-abrasive wire of claim 21 , wherein the super-abrasive particles comprise diamond particles.23. The composite super-abrasive wire of claim 21 , wherein the soldering alloy comprises tin claim 21 , copper claim 21 , lead claim 21 , indium claim 21 , silver claim 21 , bismuth claim 21 , or mixtures thereof.24. The composite super-abrasive wire of claim 21 , wherein the metal bonding layer further comprises a flux material.25. The composite super-abrasive wire of claim 21 , wherein at least some of the super-abrasive particles protrude partially above an external surface of the metal bonding layer.26. The composite super-abrasive wire of claim ...

METHODS, WIRES, AND APPARATUS FOR SLICING HARD MATERIALS

Methods, wires, and apparatus for use in cutting (e.g., slicing) hard, brittle materials is provided. The wire can be a super-abrasive wire that includes a wire core and super-abrasive particles bonded to the wire core via a metal bonding layer. This wire, or another type of wire, can be used to slice workpieces useful for producing wafers. The workpieces can be aligned within a holder to produce wafers using the device and methods presently provided. The holder rotates about its central axis, which translates to workpieces moving in orbit around this axis. A single abrasive wire, or multiple turns of wire stretched tightly between wire guides, is then contacted with the rotating holder to slice the workpieces. 120.-. (canceled)21. An apparatus for slicing workpieces into wafers , the apparatus comprising:an abrasive wire passing around a pair of primary wire guides to create a cutting wire zone having movement of the abrasive wire in a first direction; anda rotatable holder configured to (i) hold at least two workpieces, and (ii) contact the cutting wire zone, wherein rotation of the holder about a center axis creates a tangential direction of movement of the holder opposite to the first direction.22. The apparatus of claim 21 , wherein the cutting wire zone comprises a plurality of cutting segments formed by winding the abrasive wire about primary wire guides at least once.23. The apparatus of claim 21 , wherein the holder is configured to hold the at least two workpieces such that the center axis of the holder is spaced apart from a center axis of each of the workpieces.24. The apparatus of claim 21 , wherein the abrasive wire comprises:a wire core;super-abrasive particles disposed around the wire core, the super-abrasive particles (i) being plated with a solderable metal material comprising at least one of tin, copper, lead, indium, silver, or bismuth, or (ii) consisting essentially of unplated diamond, boron nitride, alumina, silicon carbide, or a mixture ...

METHODS, WIRES, AND APPARATUS FOR SLICING HARD MATERIALS

Methods, wires, and apparatus for use in cutting (e.g., slicing) hard, brittle materials is provided. The wire can be a super-abrasive wire that includes a wire core and super-abrasive particles bonded to the wire core via a metal bonding layer. This wire, or another type of wire, can be used to slice workpieces useful for producing wafers. The workpieces can be aligned within a holder to produce wafers using the device and methods presently provided. The holder rotates about its central axis, which translates to workpieces moving in orbit around this axis. A single abrasive wire, or multiple turns of wire stretched tightly between wire guides, is then contacted with the rotating holder to slice the workpieces. 120.-. (canceled)21. An apparatus for fabricating a composite super-abrasive wire , the apparatus comprising:a wire-core source for providing wire core;one or more liquid flux chambers each (i) containing a liquid flux and (ii) positioned to receive the wire core for at least one of (a) etching the wire core with the liquid flux or (b) coating the wire core with the liquid flux;a matrix powder chamber (i) containing an abrasive powder mixture for coating of the wire core therewith and (ii) positioned to receive the wire core after reception thereof by the one or more liquid flux chambers; anda heat source for heating the wire core coated with the abrasive powder mixture, thereby forming the composite super-abrasive wire.22. The apparatus of claim 21 , wherein the liquid flux contained within at least one said liquid flux chamber comprises an acid.23. The apparatus of claim 21 , wherein the liquid flux contained within at least one said liquid flux chamber comprises at least one of zinc chloride claim 21 , hydrochloric acid claim 21 , or ammonium chloride.24. The apparatus of claim 21 , wherein the liquid flux contained within at least one said liquid flux chamber comprises at least one of triethanolarnine hydrochloride claim 21 , hydrochloric acid claim 21 , ...

UV Disinfection Device and Method

A device for cleaning a target may include a housing including a base and a lid; a chamber within the housing having a top within the lid, a bottom within the base, and at least one UV reflective plate; at least one UV emitter attached to the housing and positioned to emit UV radiation into the chamber; and a support attached to the housing and located in the chamber, the support configured for locating the target so that the UV radiation illuminates the target. All of the at least one UV emitters may be located in the base of the housing and none of the at least one UV emitters may be located in the lid of the housing. A means may be provided for rotating the support relative to the base so that the target moves relative to the at least one UV emitter. The means may include at least one of a fan, a motor, and actuator, and/or specially-configured support plates, and/or bases of housings. 1. A device for cleaning a target comprising:a housing including a base and a lid;a chamber within the housing having a top within the lid, a bottom within the base, and at least one UV reflective plate;at least one UV emitter attached to the housing and positioned to emit UV radiation into the chamber, all of the at least one UV emitters being located in the base of the housing and none of the at least one UV emitters being located in the lid of the housing; anda support attached to the housing and located in the chamber, the support configured for locating the target so that the UV radiation illuminates the target.2. The device of claim 1 , wherein the at least one UV reflective plate is located adjacent the top of the chamber above the support in the lid.3. The device of claim 1 , wherein the at least one UV reflective plate is located adjacent the bottom of the chamber below the support in the base.4. The device of claim 1 , wherein the at least one UV reflective plate includes a first UV reflective plate located adjacent the top of the chamber above the support in the lid and ...

Multi-Wafer Reactor

A solution for manufacturing semiconductors is provided. An embodiment provides a chemical vapor deposition reactor, which includes a chemical vapor deposition chamber. A substrate holder located in the chemical vapor deposition chamber can be rotated about its own axis at a first angular speed, and a gas injection component located in the chemical vapor deposition chamber can be rotated about an axis of the gas injection component at a second angular speed. The angular speeds are independently selectable and can be configured to cause each point on a surface of a substrate wafer to travel in an epicyclical trajectory within a gas flow injected by the gas injection component. An angle between the substrate holder axis and the gas injection component axis and/or a distance between the substrate holder axis and the gas injection component axis can be controlled variables. 1. A system comprising: a chemical vapor deposition chamber;', 'a set of substrate holders located in the chemical vapor deposition chamber, wherein a substrate holder in the set of substrate holders is configured to be rotated about an axis of the substrate holder at a first angular speed; and', 'a set of gas injection components located in the chemical vapor deposition chamber, wherein a gas injection component in the set of gas injection components is configured to be rotated about an axis of the gas injection component at a second angular speed, wherein the first angular speed and the second angular speed are independently selectable., 'a chemical vapor deposition reactor including2. The system of claim 1 , further comprising a control system claim 1 , wherein the control system is configured to cause the substrate holder to rotate at the first angular speed and the gas injection component to rotate at the second angular speed.3. The system of claim 2 , wherein the control system is configured to vary at least one of the first angular speed or the second angular speed according to a growth ...

Ultraviolet Illuminator

A solution for disinfecting an area using ultraviolet radiation is provided. The solution can include an enclosure including at least one ultraviolet transparent window and a set of ultraviolet radiation sources located adjacent to the at least one ultraviolet transparent window. The set of ultraviolet radiation sources can be configured to generate ultraviolet radiation directed through the at least one ultraviolet transparent window. An input unit can be located on the enclosure and configured to generate an electrical signal in response to pressure applied to the enclosure. A control unit can be configured to manage the ultraviolet radiation by monitoring the electrical signal generated by the input unit and controlling, based on the monitoring, the ultraviolet radiation generated by the set of ultraviolet radiation sources.

Ultraviolet Water Disinfection System

A solution for treating a fluid, such as water, is provided. An ultraviolet transparency of a fluid can be determined before or as the fluid enters a disinfection chamber. In the disinfection chamber, the fluid can be irradiated by ultraviolet radiation to harm microorganisms that may be present in the fluid. One or more attributes of the disinfection chamber, fluid flow, and/or ultraviolet radiation can be adjusted based on the transparency to provide more efficient irradiation and/or higher disinfection rates. In addition, various attributes of the disinfection chamber, such as the position of the inlet(s) and outlet(s), the shape of the disinfection chamber, and other attributes of the disinfection chamber can be utilized to create a turbulent flow of the fluid within the disinfection chamber to promote mixing and improve uniform ultraviolet exposure. 1. A system comprising: a set of ultraviolet radiation sources configured to generate ultraviolet radiation to treat the fluid within the disinfection chamber, wherein at least one ultraviolet radiation source is operating in a UV-C range; and', 'at least one inlet located at a first end of the disinfection chamber and at least one outlet located at a second end of the disinfection chamber, wherein the fluid flows through the at least one inlet directly into the disinfection chamber and directly out of the disinfection chamber through the at least one outlet;, 'a disinfection chamber for disinfecting a fluid, the disinfection chamber comprisinga sensing component located adjacent to the disinfection chamber configured to obtain sensing data corresponding to a level of biological activity within the fluid; anda control component configured to control the set of ultraviolet radiation sources based on the level of biological activity within the fluid.2. The system of claim 1 , wherein the disinfection chamber further comprises:an outer chamber, the outer chamber including ultraviolet reflective material; andan inner ...

Storage Device Including Ultraviolet Illumination

Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration.

UV Disinfection Device and Method

A device and method for cleaning a target may include supporting a target on a support in a chamber in a housing, the chamber optionally defined by at least one UV reflective plate; operating at least one UV emitter attached to the housing and positioned to emit UV radiation into the chamber so that the UV radiation illuminates the target; and operating an actuator to modify the UV radiation illumination of the target while the UV emitter is operated. 1. A device for cleaning a target comprising:a housing;a chamber within the housing having a top, a bottom, and at least one UV reflective plate;at least one UV emitter attached to the housing and positioned to emit UV radiation into the chamber;a support attached to the housing and located in the chamber so as to be spaced from the top by a predetermined distance sufficient to allow the target to flip within the chamber, the support configured for locating the target so that the UV radiation illuminates the target; andan actuator attached to the housing positioned vibrate the support and thereby move the target relative to the support while the UV emitter emits UV radiation, the actuator creating vibration sufficient to flip the target.23-. (canceled)4. The device of claim 1 , wherein the UV reflective plate is located adjacent the bottom of the chamber.5. The device of claim 4 , wherein the housing includes a base and a lid attached to the base by a hinge claim 4 , the bottom of the chamber being located in the base and housing the UV reflective plate.6. The device of claim 1 , wherein the at least one UV reflective plate includes a first UV reflective plate located above the support and a second UV reflective plate located below the support.710-. (canceled)11. The device of claim 1 , wherein the actuator creates movement substantially along a vertical vibration axis.12. The device of claim 1 , wherein the device includes two of the actuators claim 1 , each actuator having a different vibration axis.13. The device of ...

Ultraviolet Illuminator

A solution for disinfecting an area using ultraviolet radiation is provided. The solution can include an enclosure including at least one ultraviolet transparent window and a set of ultraviolet radiation sources located adjacent to the at least one ultraviolet transparent window. The set of ultraviolet radiation sources can be configured to generate ultraviolet radiation directed through the at least one ultraviolet transparent window. An input unit can be located on the enclosure and configured to generate an electrical signal in response to pressure applied to the enclosure. A control unit can be configured to manage the ultraviolet radiation by monitoring the electrical signal generated by the input unit and controlling, based on the monitoring, the ultraviolet radiation generated by the set of ultraviolet radiation sources. 1. A system comprising:an enclosure including at least one ultraviolet transparent window;a set of ultraviolet radiation sources located adjacent to the at least one ultraviolet transparent window, the set of ultraviolet radiation sources configured to generate ultraviolet radiation directed through the at least one ultraviolet transparent window;an input unit located on the enclosure and configured to generate an electrical signal corresponding to pressure applied to at least one portion of the enclosure; and monitoring the electrical signal generated by the input unit; and', 'controlling, based on the monitoring, the ultraviolet radiation generated by the set of ultraviolet radiation sources., 'a control unit configured to manage the ultraviolet radiation by performing a method comprising2. The system of claim 1 , further comprising a logic unit configured to convert mechanical energy of the pressure applied to the input unit into the electrical signal.3. The system of claim 1 , wherein the at least one ultraviolet transparent window comprises an ultraviolet transparent polymer.4. The system of claim 1 , wherein the input unit further ...

Storage Device Including Ultraviolet Illumination

Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration.

Ultraviolet Water Disinfection System

A solution for treating a fluid, such as water, is provided. An ultraviolet transparency of a fluid can be determined before or as the fluid enters a disinfection chamber. In the disinfection chamber, the fluid can be irradiated by ultraviolet radiation to harm microorganisms that may be present in the fluid. One or more attributes of the disinfection chamber, fluid flow, and/or ultraviolet radiation can be adjusted based on the transparency to provide more efficient irradiation and/or higher disinfection rates. In addition, various attributes of the disinfection chamber, such as the position of the inlet(s) and outlet(s), the shape of the disinfection chamber, and other attributes of the disinfection chamber can be utilized to create a turbulent flow of the fluid within the disinfection chamber to promote mixing and improve uniform ultraviolet exposure. 1. A system comprising: an outer chamber, the outer chamber including ultraviolet reflective material;', 'an inner chamber located within the outer chamber, the inner chamber including ultraviolet transparent material;', 'at least one inlet located at a first end of the disinfection chamber and at least one outlet located at a second end of the disinfection chamber, wherein the at least one inlet and the at least one outlet are positioned to provide a rotational force to the fluid within the inner chamber; and', 'a set of ultraviolet radiation sources configured to emit ultraviolet radiation directed towards the inner chamber., 'a disinfection chamber for disinfecting a fluid, the disinfection chamber comprising2. The system of claim 1 , wherein the set of ultraviolet radiation sources are located within the outer chamber and outside of the inner chamber.3. The system of claim 1 , wherein the inner chamber comprises: a first transparent inner chamber and a second transparent inner chamber located within the first transparent inner chamber.4. The system of claim 3 , further comprising a passageway connecting the ...

Multi-Wafer Reactor

A solution for manufacturing semiconductors is provided. An embodiment provides a chemical vapor deposition reactor, which includes a chemical vapor deposition chamber. A substrate holder located in the chemical vapor deposition chamber can be rotated about its own axis at a first angular speed, and a gas injection component located in the chemical vapor deposition chamber can be rotated about an axis of the gas injection component at a second angular speed. The angular speeds are independently selectable and can be configured to cause each point on a surface of a substrate wafer to travel in an epicyclical trajectory within a gas flow injected by the gas injection component. An angle between the substrate holder axis and the gas injection component axis and/or a distance between the substrate holder axis and the gas injection component axis can be controlled variables. 1. A system comprising: a chemical vapor deposition chamber;', 'a set of substrate holders located in the chemical vapor deposition chamber, wherein a substrate holder in the set of substrate holders is configured to be rotated about an axis of the substrate holder at a first angular speed; and', 'a set of gas injection components located in the chemical vapor deposition chamber, wherein a gas injection component in the set of gas injection components is configured to be rotated about an axis of the gas injection component at a second angular speed, wherein the first angular speed and the second angular speed are independently selectable; and, 'a chemical vapor deposition reactor includinga control system, wherein the control system is configured to cause the substrate holder to rotate at the first angular speed and the gas injection component to rotate at the second angular speed, and wherein the control system is configured to vary at least one of the first angular speed or the second angular speed during a growth procedure.2. The system of claim 1 , wherein the chemical vapor deposition chamber ...

Ultraviolet Water Disinfection System

A solution for treating a fluid, such as water, is provided. An ultraviolet transparency of a fluid can be determined before or as the fluid enters a disinfection chamber. In the disinfection chamber, the fluid can be irradiated by ultraviolet radiation to harm microorganisms that may be present in the fluid. One or more attributes of the disinfection chamber, fluid flow, and/or ultraviolet radiation can be adjusted based on the transparency to provide more efficient irradiation and/or higher disinfection rates. In addition, various attributes of the disinfection chamber, such as the position of the inlet(s) and outlet(s), the shape of the disinfection chamber, and other attributes of the disinfection chamber can be utilized to create a turbulent flow of the fluid within the disinfection chamber to promote mixing and improve uniform ultraviolet exposure. 1. A system comprising: an outer chamber, the outer chamber including ultraviolet reflective material;', 'an inner chamber located within the outer chamber, wherein at least a portion of the inner chamber is transparent to ultraviolet radiation;', 'a low index of refraction material separating the outer chamber and the inner chamber, wherein the low index of refraction material has an index of refraction lower than an index of refraction of the fluid;', 'at least one inlet located at a first end of the disinfection chamber and at least one outlet located at a second end of the disinfection chamber, wherein the fluid flows through the at least one inlet directly into the inner chamber and directly out of the inner chamber through the at least one outlet, such that the fluid is only within the inner; and', 'a set of ultraviolet radiation sources configured to emit ultraviolet radiation directed towards the inner chamber to treat the fluid located within the inner chamber., 'a disinfection chamber for disinfecting a fluid, the disinfection chamber comprising2. The system of claim 1 , wherein the at least a portion of ...

Apparatus and method for electrochemical machining in the outline of rotationally symmetrical workpieces

Die Erfindung betrifft eine Vorrichtung zur elektrochemischen Bearbeitung im Umriss rotationssymmetrischer Werkstücke (1). Gemäß der Erfindung weist die Vorrichtung eine erste Elektrode (5) auf, die zur Erzeugung einer zum Umfang des Werkstücks (1) hin offenen Vorform (13) einer Ausnehmung (4) in Richtung der Rotationsachse (2) des Werkstücks (1) relativ zum Werkstück (1) vorschiebbar ist und umfasst eine zweite Elektrode (7), die zur Endbearbeitung der durch die erste Elektrode (5) erzeugten Vorform (13) um die Rotationsachse (2) relativ zum Werkstück (1) drehbar ist. The invention relates to a device for electrochemical machining in the outline of rotationally symmetrical workpieces (1). According to the invention, the apparatus has a first electrode (5) which, in order to produce a preform (13) of a recess (4) which is open toward the circumference of the workpiece (1) in the direction of the axis of rotation (2) of the workpiece (1) relative to Workpiece (1) can be advanced and comprises a second electrode (7) which is rotatable relative to the workpiece (1) about the rotation axis (2) for finishing the preform (13) produced by the first electrode (5).

Method of controlling an electrochemical machining process

A method of controlling a process of electrochemically machining an electrically conductive workpiece employing the spectral composition of the measured voltage within a predetermined measuring period such as induced by an applied current between the electrically conductive workpiece and an electrode tool. A process of electrochemically machining employing a material removing step with electric current supplied continuously and an a workpiece shaping step with electric current supplied intermittently. An advantageous embodiment employs extreme short pulses.

Method and device for the electrochemical machining of a metallic blank

Die Erfindung betrifft ein Verfahren zur elektro-chemischen Bearbeitung eines metallischen Rohlings (3), bei dem unter Stromfluss mittels einer Bearbeitungselektrode (4) Material von dem Rohling (3) abgetragen wird. Erfindungsgemäße wird zur Vermeidung von Materialabtrag in einem vorbestimmten Bereich (23) des Rohlings (3) an dem Bereich (23) oder in der Nähe des Bereichs (23) ein Opferkörper (6) angeordnet. Zweckmäßigerweise wird der Bereich (23) durch zumindest einen Abschnitt einer Oberfläche (24) des Rohlings (3) gebildet. In einer Ausgestaltung der Erfindung wird der Opferkörper (6) auf dem Bereich (23) des Rohlings (3) angeordnet, wobei der Opferkörper (6) den Bereich vorzugsweise vollständig belegt. Die Erfindung betrifft ferner eine Vorrichtung zur elektro-chemischen Bearbeitung eines metallischen Rohlings (3).

Method of and arrangement for eletrochemical machining

THE INVENTION RELATES TO A METHOD OF ELECTROCHEMICALLY MACHINING AN ELECTRICALLY CONDUCTIVE WORKPIECE IN AN ELECTROLYTE BY APPLYING ELECTRICAL PULSES BETWEEN THE WORKPIECE AND AN ELECTRICALLY CONDUCTIVE ELECTRODE, ONE OR MORE MACHINING PULSES (MP) ALTERNATING WITH VILTAGE PULSES (PP) FOR DEPOSITING PASSIVATION LAYERS ON THE WORKPIECE. THE AMPLITUDE OF THE VOLTAGE PULSES IS ADJUSTED DURING AN ADJUSTMENT PROCEDURE IN WHICH THE AMPLITUDE OF THE VOLTAGE PULSES IS INCREASED GRADUALLY FROM ZERO TO THE VOLTAGE AT WHICH THE WORKPIECE START TO DISOLVE IN THE ELECTROLYTE. AFTER EACH VOLTAGE INCREASE THE RESISTANCE OF THE GAP BETWEEN THE ELECTRODE AND THE WORKPIECE IS MEASURED. THE VOLTAGE VALUE FOR THE HIGHEST GAP RESISTANCE IS STORED IN A MEMORY AND USED DURING FURTHER MACHINING. THE TIME SPAN OF THE VOLTAGE PULSES MAY BE DIVIDED INTO TIME SLICES (Dt) AND FOR EACH TIME SLICE THE VOLTAGE IS ADJUSTED FOR MAXIMUM GAP RESISTANCE DURING THAT TIME SLICE.FIG. 8

Method of electrochemical machining by bipolar current pulses

Method of electrochemically machining an electrically conductive workpiece (2) in an electrolyte by applying bipolar electric pulses between the workpiece (2) and an electrically conductive electrode (6), one or more current pulses of normal polarity alternating with voltage pulses of opposite polarity. The amplitude (Un) of the voltage pulses is adjusted between two predetermined values (Un1, Un2) derived from the occurrence of a given surface quality of the workpiece (2) and the occurrence of wear of the electrode (6). The derivation is effected by means of at least one test which precedes the machining of the workpiece (2). During the test the amplitude (Un) of the voltage pulses is increased gradually from an initial value to a final value. The two predetermined values (Un1, Un2) are determined upon the occurrence of a sign reversal in the difference between successive values of a parameter which is representative of a property of a gap (5) between the electrode (6) and the workpiece (2). The parameter may be the amplitude (Umin) of a global minimum in the voltage across the gap (5) during the current pulses, which global minimum results from an oscillatory movement of the workpiece (2) and the electrode (6) relative to one another. The parameter may also be the integral (Qn) of the current across the gap (5) during the voltage pulses; or the integral (Fp) of the voltage across the gap (5) during the current pulses; or the resistance across the gap (5); or the size (St) of the gap (5).

Ultraviolet water disinfection system

A solution for treating a fluid, such as water, is provided. An ultraviolet transparency of a fluid can be determined before or as the fluid enters a disinfection chamber. In the disinfection chamber, the fluid can be irradiated by ultraviolet radiation to harm microorganisms that may be present in the fluid. One or more attributes of the disinfection chamber, fluid flow, and/or ultraviolet radiation can be adjusted based on the transparency to provide more efficient irradiation and/or higher disinfection rates. In addition, various attributes of the disinfection chamber, such as the position of the inlet(s) and outlet(s), the shape of the disinfection chamber, and other attributes of the disinfection chamber can be utilized to create a turbulent flow of the fluid within the disinfection chamber to promote mixing and improve uniform ultraviolet exposure.

Method of and arrangement for electrochemical machining

The invention relates to a method of electrochemically machining an electrically conductive workpiece in an electrolyte by applying electrical pulses between the workpiece and an electrically conductive electrode, one or more machining pulses (MP) alternating with voltage pulses (PP) for depositing passivation layers on the workpiece. The amplitude of the voltage pulses is adjusted during an adjustment procedure in which the amplitude of the voltage pulses is increased gradually from zero to the voltage at which the workpiece starts to dissolve in the electrolyte. After each voltage increase the resistance of the gap between the electrode and the workpiece is measured. The voltage value for the highest gap resistance is stored in a memory and used during further machining. The time span of the voltage pulses may be divided into time slices (Dt) and for each time slice the voltage is adjusted for maximum gap resistance during that time slice.

Electrochemical machining method with optimal machining pulse duration

For an electromechanical machining of a work piece there is an optimal pulse duration for the machining pulses corresponding to the maximum copying accuracy. Such an optimal pulse duration corresponds to a certain value of the gap. By alternating the machining pulses with measurement pulses it is possible to obtain an accurate information about the gap dimensions on-line during the electrochemical machining process. The process control means ( 20 ) are used to automate the electromechanical machining, while keeping it in the optimal mode. For this purpose the process control means ( 20 ) comprise the pulse control unit ( 26 ) to establish the pulse duration of the voltage pulses to be applied across the gap ( 4 ).

A method, an apparatus, a control system and a computer program to perform an automatic removal of cathode depositions during a bipolar electrochemical machining

The invention relates to a method, an apparatus and a computer program for electrochemical machining where a removal of cathode depositions is performed in a fully automated way by means of an application of optimal pulses of a suitable polarity. The method comprises establishing an optimal pulse duration for pulses of the inverse polarity for a removal of the cathode depositions from an electrode surface during the electrochemical machining, said optimal pulse duration being determined from a first calibration carried out preceding the machining of the work piece and a second calibration carried out during the machining of the work piece; performing a control of the machining of the work piece by means of a monitoring of an actual value of an operational parameter and comparing said actual value of the operational parameter to a preset value of the operational parameter; applying a pulse of the inverse polarity of the optimal pulse duration in case the actual value of the operational parameter is greater than the preset value of the operational parameter. The operation of the apparatus 4 in a machining mode is controlled by a process control means C. The operation of the apparatus 4 in an electrode cleaning mode is controlled by the control system C2 arranged to remove the cathode depositions from the surface of the electrode in real time.

Electrochemical treatment method and apparatus

Process and apparatus for electrochemical machining of electrically conducting object in electrolyte and electric power source

Method of and arrangement for electrochemical machining

The invention relates to a method of electrochemically machining an electrically conductive workpiece in an electrolyte by applying electrical pulses between the workpiece and an electrically conductive electrode, one or more machining pulses (MP) alternating with voltage pulses (PP) for depositing passivation layers on the workpiece. The amplitude of the voltage pulses is adjusted during an adjustment procedure in which the amplitude of the voltage pulses is increased gradually from zero to the voltage at which the workpiece starts to dissolve in the electrolyte. After each voltage increase the resistance of the gap between the electrode and the workpiece is measured. The voltage value for the highest gap resistance is stored in a memory and used during further machining. The time span of the voltage pulses may be divided into time slices (Dt) and for each time slice the voltage is adjusted for maximum gap resistance during that time slice.

Methods, wires, and apparatus for slicing hard materials

Methods, wires, and apparatus for use in cutting (e.g., slicing) hard, brittle materials is provided. The wire can be a super-abrasive wire that includes a wire core and super-abrasive particles bonded to the wire core via a metal bonding layer. This wire, or another type of wire, can be used to slice workpieces useful for producing wafers. The workpieces can be aligned within a holder to produce wafers using the device and methods presently provided. The holder rotates about its central axis, which translates to workpieces moving in orbit around this axis. A single abrasive wire, or multiple turns of wire stretched tightly between wire guides, is then contacted with the rotating holder to slice the workpieces.

METHOD OF AND PROVISION FOR ELECTROCHEMICAL MACHINING.

La invención se refiere a un procedimiento que permite mecanizar por electrolisis una pieza conductora en un electrolito, gracias a impulsos eléctricos aplicados entre esta pieza y un electrodo conductor, permitiendo uno o varios impulsos de mecanizado (MP) aplicados alternativamente con impulsos de tensión (PP) la formación de un depósito de capas de pasivación sobre dicha pieza. Se ajusta la amplitud de estos impulsos de tensión durante un proceso de ajuste, a lo largo del cual la amplitud de estos impulsos de tensión reduce progresivamente, que pasa así de cero a nivel de tensión en el que la pieza empieza a disolverse en dicho electrolito. Después de cada alza de tensión, se mide la resistencia del espacio que separa el electrodo de la pieza, estando el nivel de tensión correspondiente a la resistencia máxima de este espacio almacenado en una memoria para a ser utilizado a continuación a lo largo de un mecanizado ulterior. El lapso de tiempo de los impulsos de tensión puede dividirse envarios tramos de tiempo (Dt), siendo ajustada la tensión para cada una de esto tramos de tiempo para maximizar la resistencia de dicho espacio. The invention relates to a process that allows electrolysis to mechanise a conductive part in an electrolyte, thanks to electrical impulses applied between this part and a conductive electrode, allowing one or more machining pulses (MP) applied alternatively with voltage pulses (PP) ) the formation of a deposit of passivation layers on said piece. The amplitude of these voltage pulses is adjusted during an adjustment process, along which the amplitude of these voltage pulses decreases progressively, thus passing from zero to the voltage level at which the part begins to dissolve in said electrolyte . After each voltage boost, the resistance of the space that separates the electrode from the piece is measured, the voltage level corresponding to the maximum resistance of this space stored in a memory being to be used next along a machining ...

Method of manufacturing a stationary blade for the rotary shaving head of an electric razor

The method in essence involves working the blank mechanically to give it its final shape as a blade component (4), heat treatment (hardening) of the component (4) and subsequent mechanical removal of the allowance on the outer surface of the component (4) to give it its final dimensions. Grooves (1) are then cut electrochemically, with the aid of a power source (2) with a sharply falling voltage-current characteristic. During the electrochemical processing, one of the electrodes (3, 4) is made to oscillate in synchrony with the voltage pulses applied thereto whenever the electrodes (3, 4) are closest together; actual voltage is monitored, and surges occurring when the electrodes (3, 4) move closer together or move apart are registered, and the feed rate of one of the electrodes (3, 4) is adjusted in line with the deviations of the measured voltage pulse values from the standard pulse values. The stability of the process is gauged by the absolute values of the difference in relative resistances offered by the gap between the electrodes, at differing degrees of proximity, to the preceding and subsequent voltage pulses. Once the grooves (1) have been cut, the allowance on the inner surface of the grid is removed and the outer surface is given its final polish.

Electrochemical machining method with optimal machining pulse duration

For an electromechanical machining of a work piece there is an optimal pulse duration for the machining pulses corresponding to the maximum copying accuracy. Such an optimal pulse duration corresponds to a certain value of the gap. By alternating the machining pulses with measurement pulses it is possible to obtain an accurate information about the gap dimensions on-line during the electrochemical machining process. The process control means (20) are used to automate the electromechanical machining, while keeping it in the optimal mode. For this purpose the process control means (20) comprise the pulse control unit (26) to establish the pulse duration of the voltage pulses to be applied across the gap (4).

Method of and arrangement for electrochemical machining

A bejelentés eljárásra vonatkozik elektromos vezetőképességgelrendelkező munkadarabok elektrokémiai megmunkálására, melynek soránelektromos pulzusokat alkalmaznak a munkadarab (2) és egy elektromosanvezető elektród (6) között, miközben a munkadarab (2) és az elektród(6) közötti elektrolitot vezetnek keresztül. A megmunkáló pulzusokváltakoznak a megmunkáló pulzusokkal azonos polaritású elektromospassziváló pulzusokkal, a passziváló pulzus feszültsége amplitúdójanem elegendő a munkadarab (2) és a munkadarabon lévő passzíváló filmfeloldásához. A bejelentés vonatkozik még elektromos berendezésre éstápegységre az elektromos vezetőképességgel rendelkező munkadarab (2)elektrokémiai megmunkálását alkalmazó eljáráshoz. Ó The application relates to a process for the electrochemical treatment of electrically conductive workpieces, in which electrical pulses are applied between the workpiece (2) and an electrically conductive electrode (6) while passing an electrolyte between the workpiece (2) and the electrode (6). The machining pulses alternate with electrical passivation pulses of the same polarity as the machining pulses, and the amplitude of the passivation pulse voltage is not sufficient to dissolve the workpiece (2) and the passivation film on the workpiece. The application also relates to an electrical equipment and a power supply for a process using the electrochemical treatment of an electrically conductive workpiece (2). SHE

Methods, wires, and apparatus for slicing hard materials

Methods, wires, and apparatus for use in cutting (e.g., slicing) hard, brittle materials is provided. The wire can be a super-abrasive wire that includes a wire core and super-abrasive particles bonded to the wire core via a metal bonding layer. This wire, or another type of wire, can be used to slice workpieces useful for producing wafers. The workpieces can be aligned within a holder to produce wafers using the device and methods presently provided. The holder rotates about its central axis, which translates to workpieces moving in orbit around this axis. A single abrasive wire, or multiple turns of wire stretched tightly between wire guides, is then contacted with the rotating holder to slice the workpieces.

Verfahren und Vorrichtung zur elektro-chemischen Bearbeitung eines metallischen Rohlings

Verfahren zur elektro-chemischen Bearbeitung eines metallischen Rohlings (3a), bei dem unter Stromfluss mittels einer Bearbeitungselektrode Material von dem Rohling (3a) abgetragen wird, wobei die Bearbeitungselektrode und der Rohling (3a) im Verhältnis zueinander translatorisch und/oder rotatorisch bewegbar sind und zur Vermeidung von Materialabtrag in einem vorbestimmten Bereich (23) des Rohlings (3a) an dem Bereich (23) oder in der Nähe des Bereichs (23) ein Opferkörper (6a) angeordnet wird, wobei der Opferkörper (6a) zumindest in einem Abschnitt (29), mit dem er an dem Bereich (23) oder in der Nähe des Bereichs (23) angeordnet wird, in Bearbeitungsrichtung gesehen mit derselben Kontur versehen wird wie ein aus dem Rohling (3a) herzustellendes Erzeugnis (1a) in einem Abschnitt, an dem bzw. nahe dem der Opferkörper (6a) angeordnet wird, dadurch gekennzeichnet, dass zumindest eine den Rohling (3a) vollständig durchdringende Ausnehmung (2) gebildet wird.

Eljárás és beredezés áramvezető munkadarab elektrokémiai megmunkálására, valamint a berendezésben alkalmazott villamos tápegység

A találmány tárgya eljárás és berendezés áramvezető műnkadarabelektrőkémiai megműnkálására, valamint a berendezésben alkalmazőttvillamős tápegység. Az eljárás sőrán a műnkadarabőt elektrőlitban, aműnkadarab (2) és egy áramvezető elektród (6) közötti bipőlárisvillamős impűlzűsőkkal műnkálják meg úgy, hőgy egy vagy több nőrmálispőlaritású áramimpűlzűs ellenkező pőlaritású feszültségimpűlzűsőkkalváltakőzik. A feszültségimpűlzűsők amplitűdóját két előremeghatárőzőtt, a műnkadarab adőtt felületi minőségének fennnállásábólés az elektród kőpásának fennállásából származtatőtt érték közéállítják be, amelyeket a műnkadarab (2) adőtt felületi minőségénekfennállásából és az elektród (6) kőpásának mértékéből származtatnak. Aszármaztatást a műnkadarab megműnkálását megelőző legalább egyvizsgálat alapján végzik. A vizsgálat alatt a feszültségimpűlzűsőkamplitűdóját főkőzatősan növelik egy kezdeti értékről a véglegesértékre. A két előre meghatárőzőtt értéket egy paraméter egymástkövető értékei közötti különbség előjelváltása alapján határőzzák meg,és ez a paraméter működés közben az elektród (6) és a műnkadarab (2)közötti rés (5) egy tűlajdőnságát reprezentálja. A paraméter lehet afeszültség glőbális miniműmának amplitűdója a résben az áramimpűlzűsőkalatt. Ez a glőbális miniműm a műnkadarab és az elektród egymáshőzviszőnyítőtt rezgőmőzgásából ered. A paraméter lehet a résen (5) afeszültségimpűlzűsők alatt főlyó áram integrálja, vagy a résen (5) azáramimpűlzűsők alatt fennálló feszültség integrálja, vagy a résben (5)fennálló ellenállás, vagy a rés (5) résmérete. ŕ

Vorrichtung zur elektrochemischen Bearbeitung eines metallischen Rohlings,insbesondere ECM- oder PECM-Vorrichtung

Die Erfindung betrifft eine Vorrichtung zur elektrochemischen Bearbeitung eines metallischen Rohlings, insbesondere ECM- oder PECM-Vorrichtung, die eine Bearbeitungselektrode aufweist, mittels derer sich unter Anlage einer Spannung Material von dem Rohling abtragen lässt.

Verfahren zum elektrochemischen bearbeiten mittels optimalen bearbeitungspulsdauern

Ecm- oder pecm-vorrichtung und -verfahren zur elektrochemischen bearbeitung eines metallischen rohlings

Die Erfindung betrifft eine Vorrichtung zur elektrochemischen Bearbeitung eines metallischen Rohlings, insbesondere ECM- oder PECM-Vorrichtung, die eine Bearbeitungselektrode aufweist, mittels derer sich unter Anlage einer Spannung Material von dem Rohling abtragen lässt.