METHOD FOR DETERMINING THE THICKNESS OF A CONTAMINATING LAYER AND/OR THE TYPE OF CONTAMINATING MATERIAL, OPTICAL ELEMENT AND EUV-LITHOGRAPHY SYSTEM

The invention relates to a method for determining the thickness of a contaminating layer and/or the type of a contaminating material on a surface () in an optical system, in particular on a surface () in an EUV lithography system, comprising: irradiating the surface () on which plasmonic nanoparticles () are formed with measurement radiation (), detecting the measurement radiation () scattered at the plasmonic nanoparticles (), and determining the thickness of the contaminating layer and/or the type of the contaminating material on the basis of the detected measurement radiation (). The invention also relates to an optical element () for reflecting EUV radiation (), and to an EUV lithography system. 1121377101. Method for determining the thickness (d , d) of a contaminating layer () and/or the type of a contaminating material on a surface () in an optical system , in particular on a surface () in an EUV lithography system () , comprising:{'b': 7', '8', '10, 'i': 'a,b', 'irradiating the surface () on which plasmonic nanoparticles () are formed with measurement radiation (),'}{'b': 10', '8, 'i': a', 'a,b, 'detecting the measurement radiation () scattered at the plasmonic nanoparticles (), and'}{'b': 1', '2', '13', '10, 'i': 'a', 'determining the thickness (d, d) of the contaminating layer () and/or the type of the contaminating material on the basis of the detected measurement radiation ().'}2151081213aaa,b. Method according to claim 1 , wherein a thickness-dependent wavelength shift (Δλ claim 1 , Δλ) of a spectral distribution () of the measurement radiation () scattered at the plasmonic nanoparticles () is determined for the purpose of determining the thickness (d claim 1 , d) of the contaminating layer ().315151088abaab. Method according to or claim 1 , wherein wavelength shifts (Δλ claim 1 , Δλ) of a plurality of spectral distributions ( claim 1 , ) of the measurement radiation () scattered at plasmonic nanoparticles ( claim 1 , ) having in each case at least one ...

REFLECTIVE OPTICAL ELEMENT

A reflective optical element, in particular for a microlithographic projection exposure apparatus has a substrate (), a reflection layer system () and a defect structure () of channel-shaped defects () which extend inward from the optical effective surface (), or from an interface oriented toward the substrate as far as the reflection layer system, and permit egress of hydrogen from the reflection layer system. The channel-shaped defects () increase a diffusion coefficient that is characteristic for the egress of the hydrogen from the reflection layer system () by at least 20%, in comparison to a similar layer construction without these channel-shaped defects. 1. A reflective optical element for a microlithographic projection exposure apparatus , wherein the reflective optical element has an optical effective surface , comprising:a substrate;a reflection layer system; anda defect structure of channel-shaped defects which extend inward from the optical effective surface, or from an interface oriented toward the substrate, as far as the reflection layer system, and permit egress of hydrogen from the reflection layer system;wherein the channel-shaped defects increase a diffusion coefficient, by at least 20% in comparison to a similar layer construction without these channel-shaped defects, wherein the diffusion coefficient is characteristic for the egress of the hydrogen from the reflection layer system.2. The reflective optical element as claimed in claim 1 , wherein the channel-shaped defects are formed by nanotubes.3. The reflective optical element as claimed in claim 1 , wherein the channel-shaped defects increase by at least 40% in comparison to a similar layer construction without the channel-shaped defects claim 1 , the diffusion coefficient that is characteristic for the egress of the hydrogen from the reflection layer system.4. The reflective optical element as claimed in claim 1 , wherein the maximum length of the channel-shaped defects in the defect ...

PROJECTION OBJECTIVE OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS

A projection lens of a projection exposure apparatus, for imaging a mask which can be positioned in an object plane onto a light-sensitive layer which can be positioned in an image plane, includes a housing, in which at least one optical element is arranged, at least one partial housing which is arranged within said housing and which at least regionally surrounds light passing from the object plane as far as the image plane during the operation of the projection lens, and a reflective structure, which reduces a light proportion which reaches the image plane after reflection at the at least one partial housing, by comparison with an analogous arrangement without said reflective structure. 1. A projection lens of a projection exposure apparatus , for imaging a mask which can be positioned in an object plane onto a light-sensitive layer which can be positioned in an image plane , the projection lens comprising:a housing, in which at least one optical element is arranged;at least one partial housing which is arranged within said housing and which at least regionally surrounds light passing from the object plane as far as the image plane during the operation of the projection lens; anda reflective structure, which reduces a light proportion which reaches the image plane after reflection at the at least one partial housing, by comparison with an analogous arrangement without said reflective structure.2. The projection lens of claim 1 , wherein the partial housing comprises an inner wall facing the light passing from the object plane as far as the image plane claim 1 , wherein the reflective structure is formed on said inner wall.3. The projection lens of claim 2 , wherein the structure comprises at least one surface which forms an angle of at least 60° with the inner wall of the partial housing.4. The projection lens of claim 1 , wherein the partial housing comprises an inner wall facing the light passing from the object plane as far as the image plane claim 1 , wherein ...

Evaluating Detectability of Information in Authorization Policies

Techniques for evaluating detectablity of confidential information stored in authorization policies are described. In an example, an authorization policy has a confidential property. The confidential property is defined by whether application of a test probe to the authorization policy results in the grant of access to a resource. A processor automatically determines whether at least one witness policy can be generated that is observationally equivalent to the authorization policy from the perspective of a potential attacker, but the application of the test probe to the witness policy generates an access denial result. In the case that such a witness policy can be generated, an indication that the confidential property cannot be detected using the test probe is output. In the case that such a witness policy cannot be generated, an indication that the confidential property can be detected using the test probe is output.

Security Language Translations with Logic Resolution

Security language constructs may be translated into logic language constructs and vice versa. Logic resolution may be effected using, for example, the logic language constructs. In an example implementation, translation of a security language assertion into at least one logic language rule is described. In another example implementation, translation of a proof graph reflecting a logic language into a proof graph reflecting a security language is described. In yet another example implementation, evaluation of a logic language program using a deterministic algorithm is described.

Method for removing a contamination layer by an atomic layer etching process

A method for at least partially removing a contamination layer ( 24 ) from an optical surface ( 14 a ) of an optical element ( 14 ) that reflects EUV radiation includes: performing an atomic layer etching process for at least partially removing the contamination layer ( 24 ) from the optical surface ( 14 a ), which, in turn, includes: exposing the contamination layer ( 24 ) to a surface-modifying reactant ( 44 ) in a surface modification step, and exposing the contamination layer ( 24 ) to a material-detaching reactant ( 45 ) in a material detachment step. The optical element ( 14 ) is typically taken, before the atomic layer etching process is performed, from an optical arrangement, in particular from an EUV lithography system, in which the optical surface ( 14 a ) of the optical element ( 14 ) is exposed to EUV radiation ( 6 ), during which the contamination layer ( 24 ) is formed.

PROJECTION EXPOSURE APPARATUS HAVING A DEVICE FOR DETERMINING THE CONCENTRATION OF ATOMIC HYDROGEN

A projection exposure apparatus () for semiconductor lithography, has a device for determining the concentration of atomic hydrogen in a plasma () in the region of an optical element (), wherein the device includes a sensor (), In this case, the device includes a filter element () arranged between the region of the plasma () and the sensor (), wherein the filter element () is configured to predominantly allow the passage of atomic hydrogen from the plasma () to the sensor (). 2. Projection exposure apparatus according to claim 1 ,wherein the filter element comprises a channel-shaped region for the passage of the atomic hydrogen.3. Projection exposure apparatus according to claim 2 ,wherein inner sides of the channel-shaped region are at least partly formed such that there is a low recombination probability when atomic hydrogen is incident thereon.4. Projection exposure apparatus according to claim 2 ,wherein a ratio of length to smallest diameter of the channel-shaped region ranges between 20:1 and 4:1 at least in sections of the region.5. Projection exposure apparatus according to claim 4 ,wherein the ratio of the length to the smallest diameter of the channel-shaped region ranges between 8:1 and 4:1 at least in the sections of the region.6. Projection exposure apparatus according to claim 5 ,wherein the ratio of the length to the smallest diameter of the channel-shaped region is of the order of 6:1 at least in the sections of the region.7. Projection exposure apparatus according to claim 2 ,wherein the channel shaped region is aligned at an angle of >30° with respect to a polarization direction of used radiation incident on the optical element.8. Projection exposure apparatus according to claim 2 ,wherein the channel-shaped region has an angled configuration.9. Projection exposure apparatus according to claim 8 ,wherein the channel-shaped region is formed by interaction of a main body of the optical element and a housing.10. Projection exposure apparatus according ...

REFLECTIVE OPTICAL ELEMENT FOR EUV LITHOGRAPHY

In order to prevent delamination of a reflective coating from the substrate under the influence of reactive hydrogen, a reflective optical element () for EUV lithography is provided, which has a substrate () and a reflective coating () for reflecting radiation in the wavelength range of 5 nm to 20 nm. A functional layer () is arranged between the reflective coating () and the substrate (). With the functional layer, the concentration of hydrogen in atom % at the side of the substrate facing the reflective coating is reduced by at least a factor of 2. 1. A reflective optical element for extreme ultraviolet (EUV) lithography , comprising:a substrate and a reflective coating configured to reflect radiation in a wavelength range of 5 nm to 20 nm,a functional layer arranged between the reflective coating and the substrate, wherein the functional layer reduces a concentration of hydrogen in atom % at a side of the substrate facing the reflective coating by at least a factor of 2, anda microstructured layer arranged between the reflective coating and the substrate.2. The reflective optical element as claimed in claim 1 , wherein the functional layer comprises at least one of: tin claim 1 , silver claim 1 , molybdenum claim 1 , ruthenium claim 1 , iridium claim 1 , nickel claim 1 , iron claim 1 , cobalt claim 1 , copper claim 1 , aluminum claim 1 , platinum claim 1 , zinc claim 1 , manganese claim 1 , lead claim 1 , gold claim 1 , palladium claim 1 , tungsten claim 1 , tantalum claim 1 , alloys claim 1 , oxides claim 1 , borides claim 1 , and nitrides or carbides thereof.3. The reflective optical element as claimed in claim 1 , wherein the microstructured layer comprises at least one of: nickel-phosphorus claim 1 , nickel-boron claim 1 , copper claim 1 , silver claim 1 , gold claim 1 , platinum claim 1 , iridium claim 1 , tantalum claim 1 , titanium claim 1 , zirconium claim 1 , tungsten claim 1 , molybdenum and niobium.4. The reflective optical element as claimed in claim ...

OPTICAL ARRANGEMENT FOR EUV RADIATION WITH A SHIELD FOR PROTECTION AGAINST THE ETCHING EFFECT OF A PLASMA

An optical arrangement () for EUV radiation includes: at least one reflective optical element () having a main body () with a coating () that reflects EUV radiation (). At least one shield () is fitted to at least one surface region () of the main body () and protects the at least one surface region () against an etching effect of a plasma (H+, H*) that surrounds the reflective optical element () during operation of the optical arrangement (). A distance (A) between the shield () and the surface region () of the main body () is less than double the Debye length (λ), preferably less than the Debye length (λ), of the surrounding plasma (H+, H*). 1. An optical arrangement for extreme ultraviolet (EUV) radiation , comprising:at least one reflective optical element having a main body with a reflective coating that reflects the EUV radiation and with at least one surface region, andat least one shield fitted to the at least one surface region of the main body,wherein the at least one shield comprises a screen separated from the surface region of the main body by a gap, and is configured to protect the at least one surface region against an etching effect of a plasma that surrounds the reflective optical element during operation of the optical arrangement,wherein the at least one surface region is arranged outside of the reflective coating, andwherein a distance (A) between the shield and the surface region of the main body is less than double the Debye length (w) of the surrounding plasma.2. The optical arrangement as claimed in claim 1 , wherein the distance (A) between the shield and the surface region of the main body is less than the Debye length (w) of the surrounding plasma.3. The optical arrangement as claimed in claim 1 , wherein the screen claim 1 , at least at a side facing the gap claim 1 , has a coating composed of a hydrogen recombination material claim 1 , or wherein the screen consists of a hydrogen recombination material.4. The optical arrangement as ...

METHOD FOR OPERATING AN OPTICAL APPARATUS, AND OPTICAL APPARATUS

A method for operating an optical apparatus (A, B, ), having a structural element () which is arranged in a residual gas atmosphere (RGA) of the apparatus and which is formed at least partly from an element material subjected to a chemical reduction process and/or an etching process with a plasma component (PK) present in the residual gas atmosphere includes: feeding (S) a gas component (GK) that at least partly suppresses the reduction process depending on a detected suppression extent (UM) for a suppression of the etching process and/or reduction process by the suppressing gas component in the residual gas atmosphere; and detecting (S) the suppression extent with a sensor unit () arranged in the residual gas atmosphere. The sensor unit includes a sensor material section () composed of a sensor material and exhibiting a sensor section property that is measurable under the influence of the suppressing gas component. 1. Method for operating an optical apparatus , comprising:arranging a structural element in a residual gas atmosphere of the optical apparatus, which is formed at least partly from an element material which is subjected to a chemical reduction process and/or an etching process with a plasma component present in the residual gas atmosphere;feeding a gas component that at least partly suppresses the reduction process and/or the etching process depending on a detected suppression extent for suppressing the reduction process and/or the etching process by the suppressing gas component in the residual gas atmosphere; anddetecting the suppression extent with a sensor unit arranged in the residual gas atmosphere, the sensor unit comprising a sensor material section composed of a sensor material, wherein the sensor material section has a sensor section property that is measurable under influence of the suppressing gas component.2. Method according to claim 1 , wherein the sensor section property is an electrical conductivity of the sensor material section) claim ...

OPTICAL ARRANGEMENT, IN PARTICULAR PLASMA LIGHT SOURCE OR EUV LITHOGRAPHY SYSTEM

An optical arrangement, in particular a plasma light source (′) or an EUV lithography apparatus, with a housing (), which encloses an interior housing space (), a vacuum generating unit for generating a vacuum in the housing (), at least one surface (), which is disposed in the interior housing space (), a cleaning device () which removes contaminating substances () deposited on the surface (), and also a monitoring device () which monitors the surface (), the monitoring device () having monitoring optics () that can be directed onto the surface (). The cleaning device () is configured to remove the deposited contaminating substances () by the discharge of COin the form of COpellets (). 1. An optical arrangement , comprising:a housing, which encloses an interior housing space,a vacuum generating unit configured to generate a vacuum in the housing,at least one surface disposed in the interior housing space, and{'sub': 2', '2, 'a cleaning device configured to remove contaminating substances deposited on the surface, with a discharge of COformed as COpellets, and'}a monitoring device configured to monitor the surface, wherein the monitoring device comprises monitoring optics configured to be directed onto the surface.2. The arrangement according to claim 1 , wherein the cleaning device comprises a feeding device configured to feed the COpellets to the surface claim 1 , wherein the feeding device comprises a feed line with an outlet opening configured to discharge the COpellets claim 1 , the feed line having at least one flexible section of line configured to direct the outlet opening onto various points of the surface.3. The arrangement according to claim 2 , wherein the feed line is inserted gastight in the interior housing space through an opening in the housing.4. The arrangement according to claim 3 , wherein the feed line is configured to displace and/or rotate in relation to the housing opening for directing the outlet opening.5. The arrangement according to ...

Improved External Heat Engine Device

An external-heat engine device working on a Rankine cycle, and preferably an organic Rankine cycle. The external-heat engine, which is designed to give operational advantages, includes a cylinder block, a top cover and a bottom tray with sealing surfaces arranged to be joined together and to rest against complementarily fitting covers, each sealing surface resting sealingly against only one opposite sealing surface. 11124612142224262830121422. An external-heat engine device () working on a Rankine cycle , and preferably an organic Rankine cycle , the external-heat engine () , which is formed to give operational advantages , including a cylinder block () , a top cover () and a bottom tray () with sealing surfaces ( , , ) arranged to be joined together and to rest against complementarily fitting covers ( , , , ) , characterized in that each sealing surface ( , , ) rests sealingly against only one opposite sealing surface.21. The device according to claim 1 , characterized in that the external-heat engine () is pressure-tight towards the surroundings.31. The device according to claim 1 , characterized in that the external-heat engine () is dimensioned to resist at least 5 bar over-pressure.41561. The device according to claim 1 , characterized in that the external-heat engine () is formed with a generator () which is located inside the pressure-tight external-heat engine ().5565710. The device according to claim 4 , characterized in that the generator () includes a rotor () which is arranged on the crankshaft ().64244420102042434. The device according to claim 1 , in which valve gears ( claim 1 , ) have been arranged in the top cover () and in which a first intermediate gear () is driven by the crankshaft () claim 1 , characterized in that the first intermediate gear () is in engagement with at least two gears ( claim 1 , ) that are arranged in the top cover ().72032. The device according to claim 6 , characterized in that the first intermediate gear () is in direct ...

PROJECTION EXPOSURE SYSTEM FOR SEMICONDUCTOR LITHOGRAPHY, COMPRISING ELEMENTS FOR PLASMA CONDITIONING

A projection exposure apparatus () for semiconductor lithography contains at least one partial volume () that is closed off from the surroundings. The partial volume () contains a gas, from which a plasma can be produced. Conditioning elements () for conditioning the plasma, in particular for neutralizing the plasma, are present in the partial volume. An associated method for operating a projection exposure apparatus is also disclosed. 1. A projection exposure apparatus for semiconductor lithography , comprising:at least one partial volume that is closed off from surroundings,a purge gas arranged in the partial volume to produce a plasma,conditioning elements provided in the partial volume, to condition the plasma,whereinthe conditioning elements are suited to at least partially neutralize the plasma and to influence an electric potential of elements arranged in the partial volume.2. The projection exposure apparatus as claimed in claim 1 , whereinthe conditioning elements are suited to introduce a gas locally to reduce a concentration of the plasma.3. The projection exposure apparatus as claimed in claim 2 , further comprising:a local sub-volume configured to introduce the gas into the partial volume.4. The projection exposure apparatus as claimed in claim 1 , wherein the conditioning elements are suited to produce an increase in local pressure.5. The projection exposure apparatus as claimed in claim 1 , wherein the conditioning elements are suited to introduce electrons locally into the partial volume.6. The projection exposure apparatus as claimed in claim 1 , whereinthe elements arranged in the partial volume are optical elements.7. The projection exposure apparatus as claimed in claim 1 , wherein the conditioning elements are suited to locally influence partial pressures of the purge gas.8. The projection exposure apparatus as claimed in claim 1 , wherein the partial volume is defined by a housing.9. The projection exposure apparatus as claimed in claim 1 , ...

External heat engine device

An external-heat engine device working on a Rankine cycle, and preferably an organic Rankine cycle. The external-heat engine, which is designed to give operational advantages, includes a cylinder block, a top cover and a bottom tray with sealing surfaces arranged to be joined together and to rest against complementarily fitting covers, each sealing surface resting sealingly against only one opposite sealing surface.

Device for suppression of foreign particles carried with light beam from light source system for metrology system, sets axial distance of chopper rotational axis smaller than radius maximum value and greater than radius minimum value

The device (6) has a chopper element (21) with chopper rotation axis (22) that is skewed relative to the optical path-suppressing section. The radius of the chopper element is varied in the circumferential direction between radius maximum value and radius minimum value. The chopper element is arranged relative to the beam guide unit so that the axial distance of rotation axis of the chopper element in the beam path suppressing portion is smaller than the radius maximum value and greater than the radius minimum value. Independent claims are included for the following: (1) light source system; (2) metrology system; and (3) projection exposure system.

Device for suppressing foreign body components entrained with a light bundle along a beam path

Vorrichtung (6) zur Unterdrückung von mit Nutzstrahlung (5) längs eines Strahlengangs (7) mitgeführten Fremdkörperanteilen (31) - mit einer Strahlführungseinrichtung (12) zur Führung des Strahlengangs (7) längs eines Strahlengang-Unterdrückungsabschnitts (13), - mit einem Chopper-Körper (21) mit einer Chopper-Drehachse (22), die windschief zum Strahlengang-Unterdrückungsabschnitt (13) verläuft, - mit einem Drehantrieb (23) für den Chopper-Körper (21), - wobei ein Radius des Chopper-Körpers (21) in Umfangsrichtung zwischen einem Radius-Maximalwert r1 und einem Radius-Minimalwert r2 variiert, - wobei der Chopper-Körper (21) relativ zur Strahlführungseinrichtung (12) so angeordnet ist, dass die Drehachse (22) des Chopper-Körpers (21) zum Strahlengang-Unterdrückungsabschnitt (13) einen Achsen-Abstand A aufweist, der kleiner ist als der Radius-Maximalwert r1 und größer ist als der Radius-Minimalwert r2. Device (6) for suppressing foreign body components (31) entrained with useful radiation (5) along a beam path (7) - With a beam guiding device (12) for guiding the beam path (7) along a beam path suppression section (13), - With a chopper body (21) with a chopper axis of rotation (22) which is skewed to the beam path suppression section (13), with a rotary drive (23) for the chopper body (21), wherein a radius of the chopper body (21) varies in the circumferential direction between a maximum radius value r1 and a minimum radius value r2, - Wherein the chopper body (21) relative to the beam guiding device (12) is arranged so that the axis of rotation (22) of the chopper body (21) to the beam path suppression section (13) has an axial distance A, which is smaller than the radius maximum value r1 and greater than the radius minimum value r2.

Optical arrangement for EUV radiation with a shield for protection against the etching effect of a plasma

An optical arrangement ( 1 ) for EUV radiation includes: at least one reflective optical element ( 16 ) having a main body ( 30 ) with a coating ( 31 ) that reflects EUV radiation ( 33 ). At least one shield ( 36 ) is fitted to at least one surface region ( 35 ) of the main body ( 30 ) and protects the at least one surface region ( 35 ) against an etching effect of a plasma (H+, H*) that surrounds the reflective optical element ( 16 ) during operation of the optical arrangement ( 1 ). A distance (A) between the shield ( 36 ) and the surface region ( 35 ) of the main body ( 30 ) is less than double the Debye length (λ D ), preferably less than the Debye length (λ D ), of the surrounding plasma (H+, H*).

Delegation in logic-based access control

Access to a resource may be controlled by a policy, such that a request to access the resource is either granted or denied based on what assertions have been made by various principals. To find the assertions that support a grant of access to the resource, a template may be created that defines the nature of assertions that would cause access to succeed. Assertions may be stored in the form of tokens. The template may be used to search an existing token store to find assertions that have been made, and/or to generate assertions that have not been found in the token store and that would satisfy the template. The assertions in the template may be created by performing an abductive reasoning process on an access query.

Device and method for avoiding degradation of an optical usable surface of a mirror module, projection system, illumination system and projection exposure system

Spiegelmodul (100, 300, 400) für eine Projektionsbelichtungsanlage (200) umfassend,eine optische Nutzoberfläche (104, 303, 403),eine optische Messoberfläche (106, 305, 405, 405'),eine Messvorrichtung (113, 309, 409, 409') zur Ermittlung des Degradationszustandes der Messoberfläche,dadurch gekennzeichnet, dassdas Spiegelmodul (100) eine Temperiervorrichtung (108, 109) umfasst, die derart ausgestaltet ist, dass die Temperatur der optischen Messoberfläche (106, 305, 405, 405') kleiner als die Temperatur der optischen Nutzoberfläche (104, 303, 403), ist.

Device for generating gas curtain for deflecting contaminating substances in extreme UV-mask metrological system, has nozzle with nozzle section, where pressure of supersonic-gas flow is not larger than specific percent of ambient pressure

The device (20) has a gas nozzle (22) comprising a nozzle opening (22a) for discharging gas flow for generating a gas curtain (21). The gas nozzle generates a subsonic-gas flow (23a). The gas nozzle has a nozzle section with a flow cross-section extended towards the nozzle opening for generating supersonic-gas flow, where static pressure of the supersonic-gas flow is not larger than 50 percent of ambient pressure during discharging of the gas flow from the nozzle opening. The nozzle opening ends into a tube-shaped housing (25), and a collecting opening (24a) is formed at a wall area (25b). The gas flow contains gas e.g. hydrogen, helium, nitrogen, argon, neon, krypton, xenon or oxygen. Independent claims are also included for the following: (1) a gas nozzle for generating supersonic-gas flow (2) an extreme UV-lithographic system.

Method for operating an euv lithographty apparatus, and euv lithography apparatus

A method for operating an EUV lithography apparatus ( 1 ) with at least one vacuum housing ( 27 ) for at least one reflective optical element ( 12 ) includes operating the EUV lithography apparatus in an exposure operating mode (B), in which EUV radiation ( 5 ) is radiated into the vacuum housing, wherein a reducing plasma is generated at a surface ( 12 a) of the reflective optical element in response to an interaction of the EUV radiation with a residual gas present in the vacuum housing. After an exposure pause, in which no EUV radiation is radiated into the vacuum housing, and before renewed operation of the EUV lithography apparatus in the exposure operating mode (B), the EUV lithography apparatus is operated in a recovery operating mode, in which oxidized contaminants at the surface of the reflective optical element are reduced in order to recover a transmission of the EUV lithography apparatus before the exposure pause.

Variable Expressions in Security Assertions

A security scheme enables control over variables that are expressed in security assertions. In an example implementation, a security type is implicitly assigned to variables based on their syntactic position within a given assertion. In another example implementation, a security scheme enforces strong variable typing such that each variable in an assertion binds to only a single security type. In yet another example implementation, a security scheme constrains the binding behavior of two variables with respect to each other.

Thermal power Machine Events

Varmekraftmaskinarrangement omfattende en ekspander(11), minsten varmeveksler(12,13, 14) og en varmefluidledningsforbindelse (111) mellom en ekstern varmekilde (4) og en første varmeveksler (12), hvor den minst ene varmeveksleren (12,13,14) er fastgjort til ekspanderen (11); varmefluidledningsforbindelsen (11') omfatter minst en første fleksibel rørkopling (3, 3'); og ekspanderen (11) er tilkoplet ei maskinramme (2) via vibrasjonsdempende koplinger (22). Heat power machine arrangement comprising an expander (11), at least heat exchanger (12,13, 14) and a heat fluid conduit connection (111) between an external heat source (4) and a first heat exchanger (12), wherein the at least one heat exchanger (12,13,14) is attached to the expander (11); the heat fluid conduit connection (11 ') comprises at least a first flexible pipe connection (3, 3'); and the expander (11) is connected to a machine frame (2) via vibration damping couplings (22).

Apparatus and method for atomic layer processing

The invention relates to an atomic layer processing apparatus (1) for atomic layer processing of an optical surface (4) of an optical element (2) preferably configured to reflect EUV radiation, the apparatus (1) comprising: a processing chamber (3), and at least one processing head (5) configured for atomic layer processing of the optical surface (4) of the optical element (2) within the processing chamber (3). The at least one processing head (5) is configured to perform atomic layer processing of a curved optical surface (4) of the optical element (2). The invention also relates to a method for atomic layer processing of an optical surface (4) of an optical element (2), preferably configured to reflect EUV radiation.

Optical arrangement for EUV radiation with a shield to protect against the corrosivity of a plasma

Die Erfindung betrifft eine optische Anordnung (1) für EUV-Strahlung, umfassend: mindestens ein reflektierendes optisches Element (16), das einen Grundkörper (30) mit einer EUV-Strahlung (33) reflektierenden Beschichtung (31) aufweist. An mindestens einem Oberflächenbereich (35) des Grundkörpers (30) ist mindestens eine Abschirmung (36) angebracht, die den mindestens einen Oberflächenbereich (35) vor einer Ätzwirkung eines das reflektierende optische Element (16) im Betrieb der optischen Anordnung (1) umgebenden Plasmas (H + , H*) schützt. Ein Abstand (A) zwischen der Abschirmung (36) und dem Oberflächenbereich (35) des Grundkörpers (30) ist kleiner als das Doppelte der Debye-Länge (λ D ), bevorzugt kleiner als die Debye-Länge (λ D ) des umgebenden Plasmas (H + , H*). The invention relates to an optical arrangement (1) for EUV radiation, comprising: at least one reflective optical element (16) having a base body (30) with a coating (31) reflecting EUV radiation (33). At least one surface area (35) of the base body (30) has at least one shield (36) attached to it, which protects the at least one surface area (35) against an etching effect of a plasma surrounding the reflective optical element (16) during operation of the optical arrangement (1) (H + , H *) protects. A distance (A) between the shield (36) and the surface area (35) of the main body (30) is less than twice the Debye length (λ D ), preferably smaller than the Debye length (λ D ) of the surrounding plasma (H + , H *).

Detection of impurities on optical elements in projection exposure systems

Die vorliegende Erfindung betrifft eine Projektionsbelichtungsanlage für die Mikrolithographie, insbesondere EUV-Projektionsbelichtungsanlage, mit optischen Elementen (7, 11), die zur Beleuchtung und/oder Abbildung eines Retikels in der Projektionsbelichtungsanlage angeordnet sind, wobei mindestens einem optischen Element eine Kamera (9, 9´) zugeordnet ist, mit der eine Abbildung einer Oberfläche des optischen Elements aufgenommen werden kann. Außerdem betrifft die Erfindung ein entsprechendes Betriebsverfahren. The present invention relates to a projection exposure apparatus for microlithography, in particular EUV projection exposure apparatus, with optical elements (7, 11) which are arranged for illuminating and / or imaging a reticle in the projection exposure apparatus, at least one optical element comprising a camera (9, 9 '), With which an image of a surface of the optical element can be recorded. In addition, the invention relates to a corresponding operating method.

Method for determining the thickness of a contaminating layer and / or the type of contaminating material, optical element and EUV lithography system

Die Erfindung betrifft ein Verfahren zum Bestimmen der Dicke einer kontaminierenden Schicht und/oder der Art eines kontaminierenden Materials an einer Oberfläche (7) in einem optischen System, insbesondere an einer Oberfläche (7) in einem EUV-Lithographiesystem, umfassend: Bestrahlen der Oberfläche (7), an der plasmonische Nanopartikel (8a, b) gebildet sind, mit Messstrahlung (10), Detektieren der an den plasmonischen Nanopartikeln (8a, b) gestreuten Messstrahlung (10a), sowie Bestimmen der Dicke der kontaminierenden Schicht und/oder der Art des kontaminierenden Materials anhand der detektierten Messstrahlung (10a). Die Erfindung betrifft auch ein optisches Element (1) zur Reflexion von EUV-Strahlung (4) sowie ein EUV-Lithographiesystem. The invention relates to a method for determining the thickness of a contaminating layer and / or the type of contaminating material on a surface (7) in an optical system, in particular on a surface (7) in an EUV lithography system, comprising: irradiating the surface ( 7), on which plasmonic nanoparticles (8a, b) are formed, with measuring radiation (10), detecting the measuring radiation (10a) scattered at the plasmonic nanoparticles (8a, b), and determining the thickness of the contaminating layer and / or the type of the contaminating material on the basis of the detected measuring radiation (10a). The invention also relates to an optical element (1) for reflection of EUV radiation (4) and to an EUV lithography system.

Optical arrangement for euv radiation with a shield for protection against the etching effect of a plasma

The invention relates to an optical arrangement (1) for EUV radiation, comprising: at least one reflective optical element (16) having a main body (30) with a coating (31) that reflects EUV radiation (33). At least one shield (36) is fitted to at least one surface region (35) of the main body (30) and protects the at least one surface region (35) against an etching effect of a plasma (H+, H*) that surrounds the reflective optical element (16) during operation of the optical arrangement (1). A distance (A) between the shield (36) and the surface region (35) of the main body (30) is less than double the Debye length (ho), preferably less than the Debye length (ÄD), of the surrounding plasma (H+, H*).

Reflektives optisches element für die euv-lithographie

Messanordnung und Verfahren zum Erfassen eines Kontaminationszustands einer EUV-Spiegeloberfläche, Optische Einrichtung

Die Erfindung ist eine Messanordnung (5) zum Erfassen eines Kontaminationszustands einer EUV-Spiegeloberfläche (10) einer optischen Einrichtung, insbesondere Lithographie-Einrichtung (1), die ein erstes optisches Element (6) mit einem die Spiegeloberfläche (10) aufweisenden EUV-Spiegel aufweist, die einem zumindest teilreflektierenden zweiten optischen Element (7) und mit einer Lichtstrahlquelle (3) und mit einem Lichtstrahlsensor (8), wobei die Lichtstrahlquelle (3), der Lichtstrahlsensor (8) und die optischen Elemente (6,7) derart zueinander angeordnet sind, dass sie einen Fabry-Perot-Resonator (9) bilden.

EUV-Quellen-Modul für eine EUV-Projektionsbelichtungsanlage

Ein EUV-Quellen-Modul (27) für eine EUV-Projektionsbelichtungsanlage (1) hat eine EUV-Quelle (3) zur Erzeugung von EUV-Nutzstrahlung (16). In einer Unterdruck-Kammer (26) ist ein im Quellen-Betrieb die EUV-Nutzstrahlung (16) emittierender Quellbereich (25) der EUV-Quelle (3) untergebracht. Eine Gasquelle (29) steht über mindestens ein Ventil (31, 32) mit der Unterdruck-Kammer (26) in Fluidverbindung. Die Gasquelle (29) ist so ausgeführt, dass sie mindestens eines der nachfolgenden Gase zur Verfügung stellt: Stickstoff und/oder Wasserstoff. Es resultiert ein EUV-Quellen-Modul mit erhöhter Betriebszeit.

Verfahren zur herstellung von silicium enthaltenden materialien

Gegenstand der Erfindung ist ein Verfahren zur Herstellung von Silicium enthaltenden Materialien in einem Wirbelschichtreaktor durch Abscheidung von Silicium aus zumindest einem Silicium- Präkursor in Poren und auf der Oberfläche poröser Partikel, dadurch gekennzeichnet, dass sich im Wirbelschichtreaktor ein Fluidisiergasström durch Pulsation wellenförmig ausbreitet und auf das Wirbelbett derart einwirkt, dass sich ein homogen fluidisiertes Wirbelbett ausbildet, das durch einen Fluidisierungsindex FI von zumindest 0,95 charakterisiert ist, sowie die Verwendung der nach dem erfindungsgemäßen Verfahren erhaltenen Silicium enthaltenden Materialien als Aktivmaterialien für Anoden von Lithium-Ionen-Batterien und entsprechende Lithium-Ionen- Batterien, die in der Anode ein nach dem erfindungsgemäßen Verfahren erhaltenes Silicium enthaltendes Material aufweist.

Vorrichtung zum Schleifen gerader Messer.

Electron microscope for examining a specimen

An electron microscope (1) serves for examining a specimen (2). An electron optical unit (3) serves for passing an image of a specimen region of interest to a detection device (5). A removal device (6) serves for removing material from the specimen (2), in the specimen region of interest, in preparation for imaging of the specimen region. A stop (10) serves for separating the specimen region of interest from a specimen environment. The result is an electron microscope in which undesired effects of the removal device on the specimen to be examined are reduced.

EUV-Optik-Modul für eine EUV-Projektionsbelichtungsanlage

Ein EUV-Optik-Modul (35) für eine EUV-Projektionsbelichtungsanlage (1) hat mindestens eine optische Komponente (19, 21, 23, 7, M1 bis M6, 13) mit einer optischen Fläche zur Führung von EUV-Nutzstrahlung (16) von einer EUV-Quelle (3) längs eines Beleuchtungs- und/oder Abbildungs-strahlengangs der Projektionsbelichtungsanlage (1). Die optische Komponente (19, 21, 23, 7, M1 bis M6, 13) ist in einer Unterdruck-Kammer (36) untergebracht. Eine Gasquelle (37) steht über mindestens ein Ventil mit der Unterdruck-Kammer (36) in Fluidverbindung. Die Gasquelle (37) ist so ausgeführt, dass sie mindestens das nachfolgende Gas zur Verfügung stellt: Wasserstoff. Es resultiert ein EUV-Optik-Modul mit erhöhter Betriebszeit.

Cleaning device for an euv lithography system, euv lithography system with such a device and cleaning method

The invention relates to a cleaning device (1, 1') with a geometry adapted for mounting on a mask holder (RH) of an exposure mask (M) or for mounting on a wafer holder (WH) of a wafer (W) of an EUV lithography system (101), comprising: a providing device (3) for providing electrical energy, and also at least one cleaning unit (4, 5, 6a, b, 7a, b) for acting, in particular contactlessly, on particles in the environment of the cleaning device (1, 1'), the cleaning unit (4, 5, 6a, b, 7a, b) being in connection with the providing device (3) for the drawing of electrical energy. The invention also relates to an EUV lithography system with a cleaning device (1, 1') that is formed as described above and also to a method for cleaning an EUV lithography system.

Euv optics module for an euv projection exposure apparatus

An EUV optics module (35) for an EUV projection exposure apparatus (1) has at least one optical component (19, 21, 23, 7, M1 to M6, 13) having an optical surface for guiding of used EUV radiation (16) from an EUV source (3) along an illuminating and/or imaging beam path of the projection exposure apparatus (1). The optical component (19, 21, 23, 7, M1 to M6, 13) is accommodated in a reduced-pressure chamber (36). A gas source (37) is fluidically connected via at least one valve to the reduced-pressure chamber (36). The gas source (37) is designed such that it provides at least the following gas: hydrogen. The result is an EUV optics module having elevated operating time.

Security language translations with logic resolution

Security language translations with logic resolution

Security language constructs may be translated into logic language constructs and vice versa. Logic resolution may be effected using, for example, the logic language constructs. In an example implementation, translation of a security language assertion into at least one logic language rule is described. In another example implementation, translation of a proof graph reflecting a logic language into a proof graph reflecting a security language is described. In yet another example implementation, evaluation of a logic language program using a deterministic algorithm is described.

Security language translations with logic resolution

Security language translations with logic resolution

Security language constructs may be translated into logic language constructs and vice versa. Logic resolution may be effected using, for example, the logic language constructs. In an example implementation, translation of a security language assertion into at least one logic language rule is described. In another example implementation, translation of a proof graph reflecting a logic language into a proof graph reflecting a security language is described. In yet another example implementation, evaluation of a logic language program using a deterministic algorithm is described.

Reticle, reticle-chuck, reticle positioning system and optical system

A reticle (18) for use in a microlithographic projection exposure apparatus, comprises a reticle body (42) containing a pattern (16) and reticle coupling means (36), by means of which the reticle body (42) can be detachably coupled with a reticle-chuck (30). The reticle coupling means (36) are adapted such that the coupling of the reticle (18) with the reticle-chuck (30) can be effected by magnetic forces. Further, a Reticle-chuck (30) is provided which comprises a support unit (60) and chuck coupling means (38), by means of which a reticle (18) can be detachably coupled with the support unit (60). The chuck coupling means (38) are adapted such that the coupling of the reticle (18) with the support unit (60) can be effected by magnetic forces. Furthermore, a reticle positioning system (28) is described, wherein such a reticle (18) and such a reticle-chuck (30) are coupled to form a chuck-unit (32). Finally, an optical system having an illumination device (12) for illuminating an optical reticle (18) containing a pattern (16) and a projection objective (14) for imaging the reticle pattern (16) is provided with such a reticle positioning system (28).

Method for removing a contamination layer by an atomic layer etching process

The invention relates to a method for at least partially removing a contamination layer (24) from an optical surface (14a) of an optical element (14) that reflects EUV radiation, with the method comprising: performing an atomic layer etching process for at least partially removing the contamination layer (24) from the optical surface (14a), wherein performing the atomic layer etching process comprises: exposing the contamination layer (24) to a surface-modifying reactant (44) in a surface modification step, and exposing the contamination layer (24) to a material-detaching reactant (45) in a material detachment step. The optical element (14) is typically taken, before the atomic layer etching process is performed, from an optical arrangement, in particular from an EUV lithography system, in which the optical surface (14a) of the optical element (14) is exposed to EUV radiation (6), during which the contamination layer (24) is formed.

原子状水素の濃度を判定するデバイスを有する投影露光装置

【課題】光学素子の領域のプラズマ内の原子状水素の濃度を判定するデバイスを備える、半導体リソグラフィのための投影露光装置を提供する。【解決手段】デバイスは、センサ（３２、３２．１、３２．２、３２．３、３２．４）を備える。この場合、デバイスは、プラズマ（２９）の領域とセンサ（３２、３２．１、３２．２、３２．３、３２．４）との間に配置されたフィルタ素子（３１、３１．１，３１．２、３１．３、３１．４）を備え、フィルタ素子（３１、３１．１、３１．２、３１．３、３１．４）は、主に、プラズマ（２９）からセンサ（３２、３２．１、３２．２、３２．３、３２．４）への原子状水素の通過を可能にするように構成される。【選択図】図４

Controlling the delegation of rights

The delegation of rights may be controlled in a number of manners. In an example implementation, a delegation authority assertion is formulated with a delegator principal, a delegatee principal, a verb phrase, a resource, and a delegation-directive verb. In another example implementation, a delegation mechanism involving an assertor, a first principal, and a second principal enables a delegation to be specifically controlled. In yet another example implementation, a chained delegation mechanism enables explicit control of a permitted transitive chaining depth.

Controlling the delegation of rights

Process for manufacturing silicon-containing materials

Silicon-containing materials along with process for producing and uses for the same. The process includes reacting the silicon-containing materials in a fluidized bed reactor by deposition of silicon from at least one silicon precursor in pores and on the surface of porous particles. A fluidizing gas stream is provided within the fluidized bed reactor that is fully or partly induced to oscillate in a pulsed manner and propagates in the form of a wave and acts on the fluidized bed so as to form a homogeneously fluidized bed as a pulsed gas stream so as to form a homogeneously fluidized bed having a fluidization index FI of at least 0.95. Where the fluidizing gas stream has a superficial velocity which is above a measured minimum fluidization velocity of the pulsed gas stream and where the pulsation is combined with mechanical stirring as a further fluidizing aid.

Mehrfachspiegelanordnung

Mehrfachspiegelanordnung (MMA) umfasst eine Trägerstruktur und eine Vielzahl von Spiegeleinheiten (MU), die an der Trägerstruktur in einer Rasteranordnung nebeneinander angeordnet sind. Jede Spiegeleinheit umfasst ein Basiselement (BE) und ein gegenüber dem Basiselement individuell beweglich gelagertes Spiegelelement (ME), welches ein Spiegelsubstrat (SUB) aufweist, das an einer dem Basiselement abgewandten Vorderfläche eine Reflexionsbeschichtung (REF) zur Bildung einer EUV-Strahlung reflektierenden Spiegelfläche (MS) trägt. Die Reflexionsbeschichtung kann z.B. für EUV-Strahlung oder für DUV-Strahlung ausgelegt sein. Die Spiegelflächen sind im wesentlichen flächenfüllend nebeneinander angeordnet. Zwischen unmittelbar benachbarten Spiegelelementen verbleibt ein durch Seitenflächen der angrenzenden Spiegelsubstrate begrenzter Spalt (SP) zur Sicherstellung einer kollisionsfreien Relativbewegung der benachbarten Spiegelelemente. Bei jeder Spiegeleinheit sind zwischen dem Basiselement und dem Spiegelelement funktionelle Komponenten der Mehrfachspiegelanordnung angeordnet. Die Seitenflächen (SF1, SF2) der Spiegelsubstrate (SU1, SUB2) sind jeweils wenigstens abschnittsweise in einem von 90° abweichenden Winkel schräg zur zugeordneten Spiegelfläche (MS) orientiert.

Expandierbares 3D-Druckfilament und Verfahren zu seiner Herstellung

Es wird ein Verfahren zur Herstellung von expandierbaren 3D-Druckfilamenten vorgeschlagen, indem ein 3D-Druckfilament aus einem thermoplastischen Polymer oder Polymer-Blend bereitgestellt und unterhalb seiner Schmelztemperatur bei gegenüber Umgebungsdruck erhöhtem Druck mit wenigstens einem Treibmittel imprägniert wird. Die Erfindung sieht vor, dass das wenigstens eine Treibmittel aus der Gruppe der wenigstens eine funktionelle Gruppe aufweisenden und/oder zumindest teilweise mit Fluor substituierten Kohlenwasserstoffe mit bis zu sechs Kohlenstoffatomen gewählt wird. Die Erfindung bezieht sich ferner auf ein mittels eines solchen Verfahrens erhältliches expandierbares 3D-Druckfilament aus einem mit wenigstens einem Treibmittel imprägnierten thermoplastischen Polymer oder Polymer-Blend sowie auf ein geschäumtes Polymer-Formteil, welches aus wenigstens einem expandierbaren 3D-Druckfilament der vorgenannten Art mittels 3D-Druckens hergestellt ist.

Method for operating an optical apparatus, and optical apparatus

In a method for operating an optical apparatus (100A, 100B, 200), comprising a structural element (201) which is arranged in a residual gas atmosphere (RGA) of the apparatus (100A, 100B, 200) and which is formed at least partly from an element material which is subjected to a chemical reduction process and/or an etching process with a plasma component (PK) present in the residual gas atmosphere (RGA), the following steps are carried out: feeding (S2) a gas component (GK) that at least partly suppresses the reduction process depending on a detected suppression extent (UM) for a suppression of the etching process and/or reduction process by the suppressing gas component (GK) in the residual gas atmosphere (RGA); and detecting (S1) the suppression extent (UM) with the aid of a sensor unit (208) arranged in the residual gas atmosphere (RGA), said sensor unit comprising a sensor material section (211) composed of a sensor material, wherein the sensor material section (211) has a sensor section property that is measurable under the influence of the suppressing gas component (GK).

Multi-mirror array

A multi-mirror array comprises a carrier structure and a multiplicity of mirror units arranged next to one another in a grid arrangement on the carrier structure. Each mirror unit comprises a base element and a mirror element. Each mirror element is mounted individually movably relative to the base element. Each mirror element has a mirror substrate, which, on a front surface facing away from the base element, bears a reflection coating, which can be designed for EUV radiation or for DUV radiation. The mirror surfaces are arranged next to one another to substantially fill the surface area. Between directly adjacent mirror elements there is a gap delimited by side surfaces of the adjoining mirror substrates to ensure a collision-free relative movement of the adjacent mirror elements.

Electron microscope for examining a specimen

An electron microscope serves for examining a specimen. An electron optical unit serves for passing an image of a specimen region of interest to a detection device. A removal device serves for removing material from the specimen, in the specimen region of interest, in preparation for imaging of the specimen region. A stop serves for separating the specimen region of interest from a specimen environment. The result is an electron microscope in which undesired effects of the removal device on the specimen to be examined are reduced.

Method for depositing a cover layer, euv lithography system and optical element

A method of depositing a cover layer onto an optical element (M1) for reflection of EUV radiation. In the method, a cover layer containing phosphorus (P) is deposited onto the optical element (M1). The optical element (M1) in the course of deposition of the cover layer (35) is disposed in an interior (39) of a housing (36) of an EUV lithography system, and, for the deposition of the cover layer, phosphorus (P) is released from at least one phosphorus source (42, 43) disposed outside the interior (39) or within the interior (39). Also disclosed are an EUV lithography system and an optical element (M1) for reflecting EUV radiation.

Expandierbares 3d-druckfilament und verfahren zu seiner herstellung

Es wird ein Verfahren zur Herstellung von expandier baren 3D-Druckfilamenten vorgeschlagen, indem ein 3D-Druckfilament aus einem thermoplastischen Polymer oder Polymer-Blend bereitgestellt und unterhalb seiner Schmelztemperat ur bei gegenüber Umgebungsdruck erhöhtem Druck mit wenigstens einem Treibmittel imprägniert wird. Die Erfindung sieht vor, dass das wenigstens eine Treibmittel aus der Gruppe der wenigstens eine funktionelle Gruppe aufweisenden und/ oder zumindest teilweise mit Fluor substituierten Kohlenwasserstoffe mit bis zu sechs Kohlenstoffatomen gewählt wird. Die Erfindung bezieht sich ferner auf ein mittels eines solchen Verfahrens erhältliches expandierbares 3D-Druckfilament aus einem mit wenigstens einem Treibmittel imprägnierten thermoplastischen Polymer oder Polymer-Blend sowie auf ein geschäumtes Polymer-Formteil, welches aus wenigstens einem expandierbaren 3D-Druckfilament der vorgenannten Art mittels 3D-Druckens hergestellt ist.

Apparatus and method for avoiding a degradation of an optical used surface of a mirror module, projection system, illumination system and projection exposure apparatus

Mirror module for a projection exposure apparatus that includes an optical used surface, an optical measurement surface, a measurement apparatus for determining the degradation state of the measurement surface, characterized in that: the mirror module comprises a temperature control apparatus configured such that the temperature of the optical measurement surface is lower than the temperature of the optical used surface.

Verfahren zur herstellung von silicium-enthaltenden materialien in einem rührkesselreaktor

Verfahren zur Herstellung von Silicium-enthaltenden Materialien durch thermische Zersetzung von Silicium-Präkursoren in Anwesenheit von porösen Partikeln, wobei Silicium in Poren und auf der Oberfläche der porösen Partikel abgeschieden wird, wobei die thermische Zersetzung der Silicium-Präkursoren in der Reaktionszone eines gasdurchströmten Reaktors stattfindet und die Partikel mittels eines in den beheizten Bereichen wandgängigen Rührers während der thermischen Zersetzung in der Reaktionszone umgewälzt werden, wobei das Rührwerk wandgängig ist, wie in Anspruch 1 definiert; die nach dem Verfahren erhältlichen Silicium-enthaltenden Materialien und die Silicium-enthaltenden Materialien enthaltenden Anodenmaterialien, Anoden und Lithium-Ionen-Batterien.