21-01-2021 дата публикации
Номер: US20210020438A1
Принадлежит:
A method of forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element and the chalcogen precursor may include a chalcogen element. 1. A method of forming a transition metal dichalcogenide thin film on a substrate , the method comprising:treating the substrate with a metal organic material; andproviding a transition metal precursor and a chalcogen precursor around the substrate to synthesize a transition metal dichalcogenide on the substrate, the transition metal precursor including a transition metal element and the chalcogen precursor including a chalcogen element.2. The method of claim 1 , whereinthe metal organic material includes a metal for inducing adsorption of the transition metal precursor and the chalcogen precursor onto the substrate.3. The method of claim 1 , whereinthe metal organic material includes at least one of Al, Ti, and Ni.4. The method of claim 3 , whereinthe metal organic material includes at least one of trimethylaluminum, tris(demethylamido)aluminum, triisbutylaluminum, titanium isopropoxide, tetrakis(dimethylamido)titanium, bis(cyclopentadinenyl)nickel, and bis(ethylcyclopentadienyl)nickel.5. The method of claim 1 , wherein {'br': None, 'sub': 1-a', 'a', '2(1-b)', '2b, 'MM′XX′\u2003\u2003'}, 'the transition metal dichalcogenide is represented by Formula 1 belowwherein, in Formula 1,M and M′ are different transition metal elements from each other, [{'br': None, 'i': 'a<', '0≤1, and'}, {'br': None, 'i': 'b<', '0≤1.'}], 'X and X′ are different chalcogen elements from each other,'}6. The method of claim 1 , whereinthe transition metal element includes at least one of Ti, Zr, Hf, V, Nb, Ta, Mo, W, Tc, Re, Co, Rh, Ir, Ni, Pd, Pt, Zn, and Sn, ...
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