Method of forming transition metal dichalcogenidethin film and method of manufacturing electronic device including the same

30-01-2024 дата публикации

Номер:

US0011887849B2

Автор: Changhyun KIM, Sangwoo Kim, Kyung-Eun BYUN, Hyeonjin Shin, Ahrum Sohn, Jaehwan Jung

Принадлежит: Samsung Electronics Co., Ltd., Research & Business Foundation, Sungkyunkwan University, Research & Business Foundation Sungkyunkwan University

Контакты:

Номер заявки: 61-26-1701

Дата заявки: 04-09-2020

CPC - классификация

C C2 C23 C23C C23C1 C23C14 C23C14/C23C14/0 C23C14/06 C23C14/062 C23C14/0623 C23C14/3 C23C14/34 C23C14/5 C23C14/54 C23C14/541 C23C14/58 C23C14/580 C23C14/5806 C23C14/586 C23C14/5866 H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/0 H01L21/02 H01L21/022 H01L21/0220 H01L21/02205 H01L21/024 H01L21/0248 H01L21/02485 H01L21/025 H01L21/0250 H01L21/02505 H01L21/0256 H01L21/02568 H01L21/0259 H01L21/02592 H01L21/02595 H01L21/026 H01L21/0263 H01L21/02631 H01L21/0266 H01L21/02667 H01L21/2 H01L21/28 H01L21/281 H01L21/2819 H01L21/28194 H01L21/285 H01L21/2856 H01L21/28568 H01L21/3 H01L21/32 H01L21/324 H01L29 H01L29/H01L29/2 H01L29/24 H01L29/6 H01L29/66 H01L29/669 H01L29/6696 H01L29/66969 H01L29/7 H01L29/77 H01L29/778 H01L29/78 H01L29/786 H01L29/7868 H01L29/78681 H01L29/7869 H01L29/78696

IPC - классификация

C C2 C23 C23C C23C1 C23C14 C23C14/C23C14/0 C23C14/06 C23C14/3 C23C14/34 C23C14/5 C23C14/58 H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/0 H01L21/02 H01L21/026 H01L21/0263 H01L21/02631 H01L21/3 H01L21/32 H01L29 H01L29/H01L29/6 H01L29/66 H01L29/7 H01L29/78 H01L29/786 H01L29/7869

Цитирование НПИ

Chiappe et al. “Layer-controlled Epitaxy of 2D Semiconductors: Bridging Nanoscale Phenomena to Wafer-Scale Uniformity”, Nano technology 29, 425602 (2018).
Dolui et al. “Possible doping strategies for MoS2 monolayers: An ab initio study” 2013, Phys. Rev. B 88 075420 (Year: 2013).
Gaur et al. “Surface Energy Engineering for Tunable Wettability Through Controlled Synthesis of MoS2”, Nano Lett. 14, 4314?4321 (2015).
Huang et al. “Large-area few-layer MoS2 deposited by sputtering” 2016, Mater. Res. Express, vol. 3, 065007 and Supplementary Information (Year: 2016).
Huang et al. “Large-area few-layer MoS2 deposited by sputtering”, Mater. Res. Express, vol. 3, (2016) 065007.
Nitin Choudhary et atl., “Groth of Large-Scale and Thinkness-Modulated MoS2 Nanosheets” Applied Materials & Interfaces, 2014.
Ramos et al. “Mechanical Properties of RF-sputtering MoS2 Thin Films”, Surf. Topogr.: metrol. prop. 5 (2017) 025003.
Supplementary Information of Huang et al. (Year: 2016).
Yin et al. “Direct Formation of 2-dimensional Molybdenum Disulfide Thin Films by RF Sputtering and Rapid Thermal Annealing on Sapphire Substrate”, Journal of semiconductor technology and science, vol. 18 No. 2, 2018. 4, pp. 153-159.

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