06-06-2013 дата публикации
Номер: US20130140175A1
A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): 1. A target comprising a composite oxide which comprises In , Zn , and one or more elements X selected from the group consisting of Zr , Hf , Ge , Si , Ti , Mn , W , Mo , V , Cu , Ni , Co , Fe , Cr , Nb , Al , B , Sc , Y , La , Ce , Pr , Nd , Sm , Eu , Gd , Tb , Dy , Ho , Er , Tm , Yb and Lu in the following atomic ratios (1) to (3):{'br': None, 'In/(In+Zn)=0.2 to 0.8\u2003\u2003(1)'}{'br': None, 'In/(In+X)=0.29 to 0.99\u2003\u2003(2)'}{'br': None, 'Zn/(X+Zn)=0.29 to 0.99\u2003\u2003(3).'}2. The target according to claim 1 , wherein In/(In+Zn)=0.3 to 0.75 claim 1 , In/(In+X)=0.59 to 0.98 claim 1 , and Zn/(X+Zn)=0.45 to 0.98.3. The target according to claim 1 , wherein In/(In+Zn)=0.35 to 0.7 claim 1 , In/(In+X)=0.6 to 0.97 claim 1 , and Zn/(X+Zn)=0.6 to 0.98.4. The target according to claim 1 , comprising a composite oxide which comprises In claim 1 , Zn claim 1 , and one or more elements X selected from the group consisting of Zr claim 1 , Hf claim 1 , Ge claim 1 , Si claim 1 , Ti claim 1 , Mn claim 1 , Mo claim 1 , V claim 1 , Cu claim 1 , Co claim 1 , Cr claim 1 , Nb claim 1 , Al claim 1 , B claim 1 , Sc claim 1 , Y claim 1 , Ce claim 1 , Pr claim 1 , Nd claim 1 , Sm claim 1 , Eu claim 1 , Gd claim 1 , Tb claim 1 , Dy claim 1 , Er claim 1 , Tm claim 1 , Yb and Lu.5. The target according to claim 1 , comprising a composite oxide which comprises In claim 1 , Zn claim 1 , and one or more elements X selected from the group consisting of Zr claim 1 , Hf claim 1 , Ge claim 1 , Si claim 1 , Ti claim 1 , Mn claim 1 , Mo claim 1 , V claim 1 , Cu claim 1 , Co claim 1 , Cr claim 1 , Nb claim 1 , Al claim 1 , B claim 1 , Sc claim 1 , and Y.6. The target according to claim 1 , ...
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